Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, William J.

1981-01-01

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, W.J.

1981-11-10

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components. 13 figs.

Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2016-09-23

InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

Impulse commutating circuit with transformer to limit reapplied voltage

NASA Technical Reports Server (NTRS)

Mcconville, J. H.

1973-01-01

Silicon controlled rectifier opens circuit with currents flowing up to values of 30 amperes. Switching concept halves both current and voltage in middle of commutating cycle thereby lowering size and weight requirements. Commutating circuit can be turned on or off by command and will remain on in absence of load due to continuous gate.

Circuit engineering principles for construction of bipolar large-scale integrated circuit storage devices and very large-scale main memory

NASA Astrophysics Data System (ADS)

Neklyudov, A. A.; Savenkov, V. N.; Sergeyez, A. G.

1984-06-01

Memories are improved by increasing speed or the memory volume on a single chip. The most effective means for increasing speeds in bipolar memories are current control circuits with the lowest extraction times for a specific power consumption (1/4 pJ/bit). The control current circuitry involves multistage current switches and circuits accelerating transient processes in storage elements and links. Circuit principles for the design of bipolar memories with maximum speeds for an assigned minimum of circuit topology are analyzed. Two main classes of storage with current control are considered: the ECL type and super-integrated injection type storage with data capacities of N = 1/4 and N 4/16, respectively. The circuits reduce logic voltage differentials and the volumes of lexical and discharge buses and control circuit buses. The limiting speed is determined by the antiinterference requirements of the memory in storage and extraction modes.

Noise-margin limitations on gallium-arsenide VLSI

NASA Technical Reports Server (NTRS)

Long, Stephen I.; Sundaram, Mani

1988-01-01

Two factors which limit the complexity of GaAs MESFET VLSI circuits are considered. Power dissipation sets an upper complexity limit for a given logic circuit implementation and thermal design. Uniformity of device characteristics and the circuit configuration determines the electrical functional yield. Projection of VLSI complexity based on these factors indicates that logic chips of 15,000 gates are feasible with the most promising static circuits if a maximum power dissipation of 5 W per chip is assumed. While lower power per gate and therefore more gates per chip can be obtained by using a popular E/D FET circuit, yields are shown to be small when practical device parameter tolerances are applied. Further improvements in materials, devices, and circuits wil be needed to extend circuit complexity to the range currently dominated by silicon.

Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

NASA Technical Reports Server (NTRS)

Burns, Bradley M.; Blalock, Norman N.

2010-01-01

A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

Improved Short-Circuit Protection for Power Cells in Series

NASA Technical Reports Server (NTRS)

Davies, Francis

2008-01-01

A scheme for protection against short circuits has been devised for series strings of lithium electrochemical cells that contain built-in short-circuit protection devices, which go into a high-resistance, current-limiting state when heated by excessive current. If cells are simply connected in a long series string to obtain a high voltage and a short circuit occurs, whichever short-circuit protection device trips first is exposed to nearly the full string voltage, which, typically, is large enough to damage the device. Depending on the specific cell design, the damage can defeat the protective function, cause a dangerous internal short circuit in the affected cell, and/or cascade to other cells. In the present scheme, reverse diodes rated at a suitably high current are connected across short series sub-strings, the lengths of which are chosen so that when a short-circuit protection device is tripped, the voltage across it does not exceed its rated voltage. This scheme preserves the resetting properties of the protective devices. It provides for bypassing of cells that fail open and limits cell reversal, though not as well as does the more-expensive scheme of connecting a diode across every cell.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Volkov, M. S.; Gusev, Yu. P., E-mail: GusevYP@mpei.ru; Monakov, Yu. V.

The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limitingmore » resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed.« less

Self-healing fuse

NASA Technical Reports Server (NTRS)

Jones, N. D.; Kinsinger, R. E.; Harris, L. P.

1974-01-01

Fast-acting current limiting device provides current overload protection for vulnerable circuit elements and then re-establishes conduction path within milliseconds. Fuse can also perform as fast-acting switch to clear transient circuit overloads. Fuse takes advantage of large increase in electrical resistivity that occurs when liquid metal vaporizes.

High accuracy switched-current circuits using an improved dynamic mirror

NASA Technical Reports Server (NTRS)

Zweigle, G.; Fiez, T.

1991-01-01

The switched-current technique, a recently developed circuit approach to analog signal processing, has emerged as an alternative/compliment to the well established switched-capacitor circuit technique. High speed switched-current circuits offer potential cost and power savings over slower switched-capacitor circuits. Accuracy improvements are a primary concern at this stage in the development of the switched-current technique. Use of the dynamic current mirror has produced circuits that are insensitive to transistor matching errors. The dynamic current mirror has been limited by other sources of error including clock-feedthrough and voltage transient errors. In this paper we present an improved switched-current building block using the dynamic current mirror. Utilizing current feedback the errors due to current imbalance in the dynamic current mirror are reduced. Simulations indicate that this feedback can reduce total harmonic distortion by as much as 9 dB. Additionally, we have developed a clock-feedthrough reduction scheme for which simulations reveal a potential 10 dB total harmonic distortion improvement. The clock-feedthrough reduction scheme also significantly reduces offset errors and allows for cancellation with a constant current source. Experimental results confirm the simulated improvements.

A superconducting direct-current limiter with a power of up to 8 MVA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fisher, L. M.; Alferov, D. F., E-mail: DFAlferov@niitfa.ru; Akhmetgareev, M. R.

2016-12-15

A resistive switching superconducting fault current limiter (SFCL) for DC networks with a nominal voltage of 3.5 kV and a nominal current of 2 kA was developed, produced, and tested. The SFCL has two main units—an assembly of superconducting modules and a high-speed vacuum circuit breaker. The assembly of superconducting modules consists of nine (3 × 3) parallel–series connected modules. Each module contains four parallel-connected 2G high-temperature superconducting (HTS) tapes. The results of SFCL tests in the short-circuit emulation mode with a maximum current rise rate of 1300 A/ms are presented. The SFCL is capable of limiting the current atmore » a level of 7 kA and break it 8 ms after the current-limiting mode begins. The average temperature of HTS tapes during the current-limiting mode increases to 210 K. After the current is interrupted, the superconductivity recovery time does not exceed 1 s.« less

A superconducting direct-current limiter with a power of up to 8 MVA

NASA Astrophysics Data System (ADS)

Fisher, L. M.; Alferov, D. F.; Akhmetgareev, M. R.; Budovskii, A. I.; Evsin, D. V.; Voloshin, I. F.; Kalinov, A. V.

2016-12-01

A resistive switching superconducting fault current limiter (SFCL) for DC networks with a nominal voltage of 3.5 kV and a nominal current of 2 kA was developed, produced, and tested. The SFCL has two main units—an assembly of superconducting modules and a high-speed vacuum circuit breaker. The assembly of superconducting modules consists of nine (3 × 3) parallel-series connected modules. Each module contains four parallel-connected 2G high-temperature superconducting (HTS) tapes. The results of SFCL tests in the short-circuit emulation mode with a maximum current rise rate of 1300 A/ms are presented. The SFCL is capable of limiting the current at a level of 7 kA and break it 8 ms after the current-limiting mode begins. The average temperature of HTS tapes during the current-limiting mode increases to 210 K. After the current is interrupted, the superconductivity recovery time does not exceed 1 s.

Passive fault current limiting device

DOEpatents

Evans, Daniel J.; Cha, Yung S.

1999-01-01

A passive current limiting device and isolator is particularly adapted for use at high power levels for limiting excessive currents in a circuit in a fault condition such as an electrical short. The current limiting device comprises a magnetic core wound with two magnetically opposed, parallel connected coils of copper, a high temperature superconductor or other electrically conducting material, and a fault element connected in series with one of the coils. Under normal operating conditions, the magnetic flux density produced by the two coils cancel each other. Under a fault condition, the fault element is triggered to cause an imbalance in the magnetic flux density between the two coils which results in an increase in the impedance in the coils. While the fault element may be a separate current limiter, switch, fuse, bimetal strip or the like, it preferably is a superconductor current limiter conducting one-half of the current load compared to the same limiter wired to carry the total current of the circuit. The major voltage during a fault condition is in the coils wound on the common core in a preferred embodiment.

Passive fault current limiting device

DOEpatents

Evans, D.J.; Cha, Y.S.

1999-04-06

A passive current limiting device and isolator is particularly adapted for use at high power levels for limiting excessive currents in a circuit in a fault condition such as an electrical short. The current limiting device comprises a magnetic core wound with two magnetically opposed, parallel connected coils of copper, a high temperature superconductor or other electrically conducting material, and a fault element connected in series with one of the coils. Under normal operating conditions, the magnetic flux density produced by the two coils cancel each other. Under a fault condition, the fault element is triggered to cause an imbalance in the magnetic flux density between the two coils which results in an increase in the impedance in the coils. While the fault element may be a separate current limiter, switch, fuse, bimetal strip or the like, it preferably is a superconductor current limiter conducting one-half of the current load compared to the same limiter wired to carry the total current of the circuit. The major voltage during a fault condition is in the coils wound on the common core in a preferred embodiment. 6 figs.

Computer-Aided Design of Low-Noise Microwave Circuits

NASA Astrophysics Data System (ADS)

Wedge, Scott William

1991-02-01

Devoid of most natural and manmade noise, microwave frequencies have detection sensitivities limited by internally generated receiver noise. Low-noise amplifiers are therefore critical components in radio astronomical antennas, communications links, radar systems, and even home satellite dishes. A general technique to accurately predict the noise performance of microwave circuits has been lacking. Current noise analysis methods have been limited to specific circuit topologies or neglect correlation, a strong effect in microwave devices. Presented here are generalized methods, developed for computer-aided design implementation, for the analysis of linear noisy microwave circuits comprised of arbitrarily interconnected components. Included are descriptions of efficient algorithms for the simultaneous analysis of noisy and deterministic circuit parameters based on a wave variable approach. The methods are therefore particularly suited to microwave and millimeter-wave circuits. Noise contributions from lossy passive components and active components with electronic noise are considered. Also presented is a new technique for the measurement of device noise characteristics that offers several advantages over current measurement methods.

Application Study of a High Temperature Superconducting Fault Current Limiter for Electric Power System

NASA Astrophysics Data System (ADS)

Naito, Yuji; Shimizu, Iwao; Yamaguchi, Iwao; Kaiho, Katsuyuki; Yanabu, Satoru

Using high temperature superconductor, a Superconducting Fault Current Limiter (SFCL) was made and tested. Superconductor and vacuum interrupter as commutation switch are connected in parallel with bypass coil. When a fault occurs and the excessive current flows, superconductor is first quenched and the current is transferred to bypass coil because on voltage drop of superconductor. At the same time, since magnetic field is generated by current which flows in bypass coil, commutation switch is immediately driven by electromagnetic repulsion plate connected to driving rod of vacuum interrupter, and superconductor is separated from this circuit. Using the testing model, we could separate the superconductor from a circuit due to movement of vacuum interrupter within half-cycle current and transfer all current to bypass coil. Since operation of a commutation switch is included in current limiting operation of this testing model, it is one of helpful circuit of development of SFCL in the future. Moreover, since it can make the consumed energy of superconductor small during fault state due to realization of high-speed switch with simple composition, the burden of superconductor is reduced compared with conventional resistive type SFCL and it is considered that the flexibility of a SFCL design increases. Cooperation with a circuit breaker was also considered, the trial calculation of a parameter and energy of operation is conducted and discussion in the case of installing the SFCL to electric power system is made.

A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

NASA Astrophysics Data System (ADS)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

Universal power transistor base drive control unit

DOEpatents

Gale, Allan R.; Gritter, David J.

1988-01-01

A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

Universal power transistor base drive control unit

DOEpatents

Gale, A.R.; Gritter, D.J.

1988-06-07

A saturation condition regulator system for a power transistor is disclosed which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition. 2 figs.

Nondestructive test determines overload destruction characteristics of current limiter fuses

NASA Technical Reports Server (NTRS)

Swartz, G. A.

1968-01-01

Nondestructive test predicts the time required for current limiters to blow /open the circuit/ when subjected to a given overload. The test method is based on an empirical relationship between the voltage rise across a current limiter for a fixed time interval and the time to blow.

High voltage DC power supply

DOEpatents

Droege, T.F.

1989-12-19

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

High voltage DC power supply

DOEpatents

Droege, Thomas F.

1989-01-01

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

1984-01-01

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

Noise performance limits of advanced x-ray imagers employing poly-Si-based active pixel architectures

NASA Astrophysics Data System (ADS)

Koniczek, Martin; El-Mohri, Youcef; Antonuk, Larry E.; Liang, Albert; Zhao, Qihua; Jiang, Hao

2011-03-01

A decade after the clinical introduction of active matrix, flat-panel imagers (AMFPIs), the performance of this technology continues to be limited by the relatively large additive electronic noise of these systems - resulting in significant loss of detective quantum efficiency (DQE) under conditions of low exposure or high spatial frequencies. An increasingly promising approach for overcoming such limitations involves the incorporation of in-pixel amplification circuits, referred to as active pixel architectures (AP) - based on low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). In this study, a methodology for theoretically examining the limiting noise and DQE performance of circuits employing 1-stage in-pixel amplification is presented. This methodology involves sophisticated SPICE circuit simulations along with cascaded systems modeling. In these simulations, a device model based on the RPI poly-Si TFT model is used with additional controlled current sources corresponding to thermal and flicker (1/f) noise. From measurements of transfer and output characteristics (as well as current noise densities) performed upon individual, representative, poly-Si TFTs test devices, model parameters suitable for these simulations are extracted. The input stimuli and operating-point-dependent scaling of the current sources are derived from the measured current noise densities (for flicker noise), or from fundamental equations (for thermal noise). Noise parameters obtained from the simulations, along with other parametric information, is input to a cascaded systems model of an AP imager design to provide estimates of DQE performance. In this paper, this method of combining circuit simulations and cascaded systems analysis to predict the lower limits on additive noise (and upper limits on DQE) for large area AP imagers with signal levels representative of those generated at fluoroscopic exposures is described, and initial results are reported.

Design and development of a low-cost biphasic charge-balanced functional electric stimulator and its clinical validation.

PubMed

Shendkar, Chandrashekhar; Lenka, Prasanna K; Biswas, Abhishek; Kumar, Ratnesh; Mahadevappa, Manjunatha

2015-10-01

Functional electric stimulators that produce near-ideal, charge-balanced biphasic stimulation waveforms with interphase delay are considered safer and more efficacious than conventional stimulators. An indigenously designed, low-cost, portable FES device named InStim is developed. It features a charge-balanced biphasic single channel. The authors present the complete design, mathematical analysis of the circuit and the clinical evaluation of the device. The developed circuit was tested on stroke patients affected by foot drop problems. It was tested both under laboratory conditions and in clinical settings. The key building blocks of this circuit are low dropout regulators, a DC-DC voltage booster and a single high-power current source OP-Amp with current-limiting capabilities. This allows the device to deliver high-voltage, constant current, biphasic pulses without the use of a bulky step-up transformer. The advantages of the proposed design over the currently existing devices include improved safety features (zero DC current, current-limiting mechanism and safe pulses), waveform morphology that causes less muscle fatigue, cost-effectiveness and compact power-efficient circuit design with minimal components. The device is also capable of producing appropriate ankle dorsiflexion in patients having foot drop problems of various Medical Research Council scale grades.

Error Mitigation for Short-Depth Quantum Circuits

NASA Astrophysics Data System (ADS)

Temme, Kristan; Bravyi, Sergey; Gambetta, Jay M.

2017-11-01

Two schemes are presented that mitigate the effect of errors and decoherence in short-depth quantum circuits. The size of the circuits for which these techniques can be applied is limited by the rate at which the errors in the computation are introduced. Near-term applications of early quantum devices, such as quantum simulations, rely on accurate estimates of expectation values to become relevant. Decoherence and gate errors lead to wrong estimates of the expectation values of observables used to evaluate the noisy circuit. The two schemes we discuss are deliberately simple and do not require additional qubit resources, so to be as practically relevant in current experiments as possible. The first method, extrapolation to the zero noise limit, subsequently cancels powers of the noise perturbations by an application of Richardson's deferred approach to the limit. The second method cancels errors by resampling randomized circuits according to a quasiprobability distribution.

A miniature microcontroller curve tracing circuit for space flight testing transistors.

PubMed

Prokop, N; Greer, L; Krasowski, M; Flatico, J; Spina, D

2015-02-01

This paper describes a novel miniature microcontroller based curve tracing circuit, which was designed to monitor the environmental effects on Silicon Carbide Junction Field Effect Transistor (SiC JFET) device performance, while exposed to the low earth orbit environment onboard the International Space Station (ISS) as a resident experiment on the 7th Materials on the International Space Station Experiment (MISSE7). Specifically, the microcontroller circuit was designed to operate autonomously and was flown on the external structure of the ISS for over a year. This curve tracing circuit is capable of measuring current vs. voltage (I-V) characteristics of transistors and diodes. The circuit is current limited for low current devices and is specifically designed to test high temperature, high drain-to-source resistance SiC JFETs. The results of each I-V data set are transmitted serially to an external telemetered communication interface. This paper discusses the circuit architecture, its design, and presents example results.

Feasibility analysis of a novel hybrid-type superconducting circuit breaker in multi-terminal HVDC networks

NASA Astrophysics Data System (ADS)

Khan, Umer Amir; Lee, Jong-Geon; Seo, In-Jin; Amir, Faisal; Lee, Bang-Wook

2015-11-01

Voltage source converter-based HVDC systems (VSC-HVDC) are a better alternative than conventional thyristor-based HVDC systems, especially for developing multi-terminal HVDC systems (MTDC). However, one of the key obstacles in developing MTDC is the absence of an adequate protection system that can quickly detect faults, locate the faulty line and trip the HVDC circuit breakers (DCCBs) to interrupt the DC fault current. In this paper, a novel hybrid-type superconducting circuit breaker (SDCCB) is proposed and feasibility analyses of its application in MTDC are presented. The SDCCB has a superconducting fault current limiter (SFCL) located in the main current path to limit fault currents until the final trip signal is received. After the trip signal the IGBT located in the main line commutates the current into a parallel line where DC current is forced to zero by the combination of IGBTs and surge arresters. Fault simulations for three-, four- and five-terminal MTDC were performed and SDCCB performance was evaluated in these MTDC. Passive current limitation by SFCL caused a significant reduction of fault current interruption stress in the SDCCB. It was observed that the DC current could change direction in MTDC after a fault and the SDCCB was modified to break the DC current in both the forward and reverse directions. The simulation results suggest that the proposed SDCCB could successfully suppress the DC fault current, cause a timely interruption, and isolate the faulty HVDC line in MTDC.

Integrated P-channel MOS gyrator

NASA Technical Reports Server (NTRS)

Hochmair, E. S. (Inventor)

1974-01-01

A gyrator circuit is described which is of the conventional configuration of two amplifiers in a circular loop, one producing zero phase shift and the other producing 180 phase reversal, in a circuit having medium Q composed of all field effect transistors of the same conductivity type. The current source to each gyrator amplifier comprises an amplifier which responds to changes in current, with the amplified signals feed back so as to limit current. The feedback amplifier has a large capacitor connected to bypass high frequency components, thereby stabilizing the output. The design makes possible fabrication of circuits with transistors of only one conductivity type, providing economies in manufacture and use.

Input-output Transfer Function Analysis of a Photometer Circuit Based on an Operational Amplifier.

PubMed

Hernandez, Wilmar

2008-01-09

In this paper an input-output transfer function analysis based on the frequencyresponse of a photometer circuit based on operational amplifier (op amp) is carried out. Opamps are universally used in monitoring photodetectors and there are a variety of amplifierconnections for this purpose. However, the electronic circuits that are usually used to carryout the signal treatment in photometer circuits introduce some limitations in theperformance of the photometers that influence the selection of the op amps and otherelectronic devices. For example, the bandwidth, slew-rate, noise, input impedance and gain,among other characteristics of the op amp, are often the performance limiting factors ofphotometer circuits. For this reason, in this paper a comparative analysis between twophotodiode amplifier circuits is carried out. One circuit is based on a conventional currentto-voltage converter connection and the other circuit is based on a robust current-to-voltageconverter connection. The results are satisfactory and show that the photodiode amplifierperformance can be improved by using robust control techniques.

Inrush Current Suppression Circuit and Method for Controlling When a Load May Be Fully Energized

NASA Technical Reports Server (NTRS)

Schwerman, Paul (Inventor)

2017-01-01

A circuit and method for controlling when a load may be fully energized includes directing electrical current through a current limiting resistor that has a first terminal connected to a source terminal of a field effect transistor (FET), and a second terminal connected to a drain terminal of the FET. The gate voltage magnitude on a gate terminal of the FET is varied, whereby current flow through the FET is increased while current flow through the current limiting resistor is simultaneously decreased. A determination is made as to when the gate voltage magnitude on the gate terminal is equal to or exceeds a predetermined reference voltage magnitude, and the load is enabled to be fully energized when the gate voltage magnitude is equal to or exceeds the predetermined reference voltage magnitude.

A Solid-State Fault Current Limiting Device for VSC-HVDC Systems

NASA Astrophysics Data System (ADS)

Larruskain, D. Marene; Zamora, Inmaculada; Abarrategui, , Oihane; Iturregi, Araitz

2013-08-01

Faults in the DC circuit constitute one of the main limitations of voltage source converter VSC-HVDC systems, as the high fault currents can damage seriously the converters. In this article, a new design for a fault current limiter (FCL) is proposed, which is capable of limiting the fault current as well as interrupting it, isolating the DC grid. The operation of the proposed FCL is analysed and verified with the most usual faults that can occur in overhead lines.

Superconducting shielded core reactor with reduced AC losses

DOEpatents

Cha, Yung S.; Hull, John R.

2006-04-04

A superconducting shielded core reactor (SSCR) operates as a passive device for limiting excessive AC current in a circuit operating at a high power level under a fault condition such as shorting. The SSCR includes a ferromagnetic core which may be either closed or open (with an air gap) and extends into and through a superconducting tube or superconducting rings arranged in a stacked array. First and second series connected copper coils each disposed about a portion of the iron core are connected to the circuit to be protected and are respectively wound inside and outside of the superconducting tube or rings. A large impedance is inserted into the circuit by the core when the shielding capability of the superconducting arrangement is exceeded by the applied magnetic field generated by the two coils under a fault condition to limit the AC current in the circuit. The proposed SSCR also affords reduced AC loss compared to conventional SSCRs under continuous normal operation.

An Investigative Redesign of the ECG and EMG Signal Conditioning Circuits for Two-fault Tolerance and Circuit Improvement

NASA Technical Reports Server (NTRS)

Obrien, Edward M.

1991-01-01

An investigation was undertaken to make the elctrocardiography (ECG) and the electromyography (EMG) signal conditioning circuits two-fault tolerant and to update the circuitry. The present signal conditioning circuits provide at least one level of subject protection against electrical shock hazard but at a level of 100 micro-A (for voltages of up to 200 V). However, it is necessary to provide catastrophic fault tolerance protection for the astronauts and to provide protection at a current level of less that 100 micro-A. For this study, protection at the 10 micro-A level was sought. This is the generally accepted value below which no possibility of microshock exists. Only the possibility of macroshock exists in the case of the signal conditioners. However, this extra amount of protection is desirable. The initial part deals with current limiter circuits followed by an investigation into the signal conditioner specifications and circuit design.

Three types of solid state remote power controllers

NASA Technical Reports Server (NTRS)

Baker, D. E.

1975-01-01

Three types of solid state Remote Power Controller (RPC) circuits for 120 Vdc spacecraft distribution systems have been developed and evaluated. Both current limiting and noncurrent limiting modes of overload protection were developed and were demonstrated to be feasible. A second generation of circuits was developed which offers comparable performance with substantially less cost and complexity. Electrical efficiency for both generations is 98.5 to 99%. This paper describes various aspects of the circuit design, trade-off studies, and experimental test results. Comparisons of design parameters, component requirements, and engineering model evaluations will emphasize the high efficiency and reliability of the designs.

Chip-integrated optical power limiter based on an all-passive micro-ring resonator

NASA Astrophysics Data System (ADS)

Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

2014-10-01

Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

Hybrid superconducting a.c. current limiter extrapolation 63 kV-1 250 A

NASA Astrophysics Data System (ADS)

Tixador, P.; Levêque, J.; Brunet, Y.; Pham, V. D.

1994-04-01

Following the developement of a.c. superconducting wires a.c. current superconducting limiters have emerged. These limiters limit the fault currents nearly instantaneously, without detection nor order giver and may be suitable for high voltages. They are based on the natural transition from the superconducting state to the normal resistive state by overstepping the critical current of a superconducting coil which limits or triggers the limitation. Our limiter device consists essentially of two copper windings coupled through a saturable magnetic circuit and of a non inductively wound superconducting coil with a reduced current compared to the line current. This design allows a simple superconducting cable and reduced cryogenic losses but the dielectric stresses are high during faults. A small model (150 V/50 A) has experimentally validated our design. An industrial scale current limiter is designed and the comparisons between this design and other superconducting current limiters are given. Les courants de court-circuit sur les grands réseaux électriques ne cessent d'augmenter. Dans ce contexte sont apparus les limiteurs supraconducteurs de courant suite au développement des brins supraconducteurs alternatifs. Ces limiteurs peuvent limiter les courants de défaut presque instantanément, sans détection de défaut ni donneur d'ordre et ils sont extrapolables aux hautes tensions. Ils sont fondés sur la transition naturelle de l'état supraconducteur à l'état normal très résistif par dépassement du courant critique d'un enroulement supraconducteur qui limite ou déclenche la limitation. Notre limiteur est composé de deux enroulements en cuivre couplés par un circuit magnétique saturable et d'une bobine supraconductrice à courant réduit par rapport au courant de la ligne. Cette conception permet un câble supraconducteur simple et des pertes cryogéniques réduites mais les contraintes diélectriques en régime de défaut sont importantes. Une maquette (150 V/50 A) a permis de valider expérimentalement cette conception. Nous aborderons l'extrapolation d'un limiteur de taille industrielle (63 kV/1 250 A). Les résultats seront comparés à des limiteurs supraconducteurs résistifs et de type DASC.

Arc fault detection system

DOEpatents

Jha, Kamal N.

1999-01-01

An arc fault detection system for use on ungrounded or high-resistance-grounded power distribution systems is provided which can be retrofitted outside electrical switchboard circuits having limited space constraints. The system includes a differential current relay that senses a current differential between current flowing from secondary windings located in a current transformer coupled to a power supply side of a switchboard, and a total current induced in secondary windings coupled to a load side of the switchboard. When such a current differential is experienced, a current travels through a operating coil of the differential current relay, which in turn opens an upstream circuit breaker located between the switchboard and a power supply to remove the supply of power to the switchboard.

Development of a 66kV Class Rectifier Type Fault Current Limiter System

NASA Astrophysics Data System (ADS)

Ohkuma, Takeshi; Sato, Yoshibumi; Takahashi, Yoshihisa; Tokuda, Noriaki; Murai, Masaki; Nagasaki, Norihisa; Yuguchi, Kyousuke

A fault current limiter (FCL) is extensively expected to suppress fault current, particularly required for trunk power systems heavily connected high-voltage transmission lines, such as 500 kV class power system which constitutes the nucleus of the electric power system. By installing such FCL in the power system, the system interconnection is possible without the need to raise the capacity of the circuit breakers, and it is expected that FCLs may be used in more efficient power system design. For these reasons, FCLs based on various principles of operation have been developed in the world. In this paper, we have proposed a new type of FCL system, consisting of solid-state diodes, DC coil and bypass AC coil, and described the specification of distribution power system and 66 kV class FCL model. Also we have proposed a 66 kV class prototype single-phase model and the current limiting performance of this model was evaluated using a short circuit generator.

Developments toward an 18% efficient silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.

1983-01-01

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Direct current hybrid breakers: A design and its realization

NASA Astrophysics Data System (ADS)

Atmadji, Ali Mahfudz Surya

2000-12-01

The use of semiconductors for electric power circuit breakers instead of conventional breakers remains a utopia when designing fault current interrupters for high power networks. The major problems concerning power semiconductor circuit breakers are the excessive heat losses and their sensitivity to transients. However, conventional breakers are capable of dealing with such matters. A combination of the two methods, or so-called `hybrid breakers', would appear to be a solution; however, hybrid breakers use separate parallel branches for conducting the main current and interrupting the short-circuit current. Such breakers are intended for protecting direct current (DC) traction systems. In this thesis hybrid switching techniques for current limitation and purely solidstate current interruption are investigated for DC breakers. This work analyzes the transient behavior of hybrid breakers and compares their operations with conventional breakers and similar solid-state devices in DC systems. Therefore a hybrid breaker was constructed and tested in a specially designed high power test circuit. A vacuum breaker was chosen as the main breaker in the main conducting path; then a commutation path was connected across the vacuum breaker where it provided current limitation and interruption. The commutation path operated only during any current interruption and the process required additional circuits. These included a certain energy storage, overvoltage suppressor and commutation switch. So that when discharging this energy, a controlled counter-current injection could be produced. That counter-current opposed the main current in the breaker by superposition in order to create a forced current-zero. One-stage and two-stage commutation circuits have been treated extensively. This study project contains both theoretical and experimental investigations. A direct current shortcircuit source was constructed capable of delivering power equivalent to a fault. It supplied a direct voltage of 1kVDC which was rectified having been obtained from a 3-phase lOkV/380V supply. The source was successfully tested to deliver a fault current of 7kA with a time constant of 5ms. The hybrid breaker that was developed could provide protection for 750VDC traction systems. The breaker was equipped with a fault- recognizing circuit based on a current level triggering. An electronic circuit was built for this need and was included in the system. It monitored the system continuously and took action by generating trip signals when a fault was recognized. Interruption was followed by a suitable timing of the fast contact separation in the main breaker and the current-zero creation. An electrodynamically driven mechanism was successfully tested having a dead-time of 300μs to separate the main breaker contacts. Furthermore, a maximum peak current injection of RA at a frequency of 500Hz could be obtained in order to produce an artificial current-zero in the vacuum breaker. A successful current interruption with a prospective value of RA was achieved by the hybrid switching technique. In addition, measures were taken to prevent overvoltages. Experimentally, the concept of a hybrid breaker was compared with the functioning of all mechanical (air breaker) and all electronical (IGCT breaker) versions. Although a single stage interrupting method was verified experimentally, two two-stage interrupting methods were analyzed theoretically.

Arc fault detection system

DOEpatents

Jha, K.N.

1999-05-18

An arc fault detection system for use on ungrounded or high-resistance-grounded power distribution systems is provided which can be retrofitted outside electrical switchboard circuits having limited space constraints. The system includes a differential current relay that senses a current differential between current flowing from secondary windings located in a current transformer coupled to a power supply side of a switchboard, and a total current induced in secondary windings coupled to a load side of the switchboard. When such a current differential is experienced, a current travels through a operating coil of the differential current relay, which in turn opens an upstream circuit breaker located between the switchboard and a power supply to remove the supply of power to the switchboard. 1 fig.

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

PubMed

Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

2018-04-01

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge Transport in Carbon Nanotubes-Polymer Composite Photovoltaic Cells

PubMed Central

Ltaief, Adnen; Bouazizi, Abdelaziz; Davenas, Joel

2009-01-01

We investigate the dark and illuminated current density-voltage (J/V) characteristics of poly(2-methoxy-5-(2’-ethylhexyloxy)1-4-phenylenevinylene) (MEH-PPV)/single-walled carbon nanotubes (SWNTs) composite photovoltaic cells. Using an exponential band tail model, the conduction mechanism has been analysed for polymer only devices and composite devices, in terms of space charge limited current (SCLC) conduction mechanism, where we determine the power parameters and the threshold voltages. Elaborated devices for MEH-PPV:SWNTs (1:1) composites showed a photoresponse with an open-circuit voltage Voc of 0.4 V, a short-circuit current density JSC of 1 µA/cm² and a fill factor FF of 43%. We have modelised the organic photovoltaic devices with an equivalent circuit, where we calculated the series and shunt resistances.

Flexible moldable conductive current-limiting materials

DOEpatents

Shea, John Joseph; Djordjevic, Miomir B.; Hanna, William Kingston

2002-01-01

A current limiting PTC device (10) has two electrodes (14) with a thin film of electric conducting polymer material (20) disposed between the electrodes, the polymer material (20) having superior flexibility and short circuit performance, where the polymer material contains short chain aliphatic diepoxide, conductive filler particles, curing agent, and, preferably, a minor amount of bisphenol A epoxy resin.

Alternative model of space-charge-limited thermionic current flow through a plasma

NASA Astrophysics Data System (ADS)

Campanell, M. D.

2018-04-01

It is widely assumed that thermionic current flow through a plasma is limited by a "space-charge-limited" (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. Here, we formulate a fundamentally different current-limited mode. In the "inverse" mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting the circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. The inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.

Interference and memory capacity effects in memristive systems

NASA Astrophysics Data System (ADS)

Hermiz, John; Chang, Ting; Du, Chao; Lu, Wei

2013-02-01

Short-term memory implies the existence of a capacity limit beyond which memory cannot be securely formed and retained. The underlying mechanisms are believed to be two primary factors: decay and interference. Here, we demonstrate through both simulation and experiment that the memory capacity effect can be implemented in a parallel memristor circuit, where decay and interference are achieved by the inherent ion diffusion in the device and the competition for current supply in the circuit, respectively. This study suggests it is possible to emulate high-level biological behaviors with memristor circuits and will stimulate continued studies on memristor-based neuromorphic circuits.

Impedance matching for repetitive high voltage all-solid-state Marx generator and excimer DBD UV sources

NASA Astrophysics Data System (ADS)

Wang, Yonggang; Tong, Liqing; Liu, Kefu

2017-06-01

The purpose of impedance matching for a Marx generator and DBD lamp is to limit the output current of the Marx generator, provide a large discharge current at ignition, and obtain fast voltage rising/falling edges and large overshoot. In this paper, different impedance matching circuits (series inductor, parallel capacitor, and series inductor combined with parallel capacitor) are analyzed. It demonstrates that a series inductor could limit the Marx current. However, the discharge current is also limited. A parallel capacitor could provide a large discharge current, but the Marx current is also enlarged. A series inductor combined with a parallel capacitor takes full advantage of the inductor and capacitor, and avoids their shortcomings. Therefore, it is a good solution. Experimental results match the theoretical analysis well and show that both the series inductor and parallel capacitor improve the performance of the system. However, the series inductor combined with the parallel capacitor has the best performance. Compared with driving the DBD lamp with a Marx generator directly, an increase of 97.3% in radiant power and an increase of 59.3% in system efficiency are achieved using this matching circuit.

Research on resistance characteristics of YBCO tape under short-time DC large current impact

NASA Astrophysics Data System (ADS)

Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

2017-06-01

Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sukrittanon, Supanee; Liu, Ren; Pan, Janet L.

2016-08-07

We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in themore » GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.« less

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

NASA Astrophysics Data System (ADS)

Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.; Pan, Janet L.; Jungjohann, K. L.; Tu, Charles W.; Dayeh, Shadi A.

2016-08-01

We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

DOE PAGES

Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.; ...

2016-08-07

Here, we report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We also show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface andmore » in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. Finally, we present performance benefits of dilute nitride microwire solar cells and show that it can be achieved by further tuning of the epitaxial quality of the underlying materials.« less

Enhanced ground bounce noise reduction in a low-leakage CMOS multiplier

NASA Astrophysics Data System (ADS)

Verma, Bipin Kumar; Akashe, Shyam; Sharma, Sanjay

2015-09-01

In this paper, various parameters are used to reduce leakage power, leakage current and noise margin of circuits to enhance their performance. A multiplier is proposed with low-leakage current and low ground bounce noise for the microprocessor, digital signal processors (DSP) and graphics engines. The ground bounce noise problem appears when a conventional power-gating circuit transits from sleep-to-active mode. This paper discusses a reduction in leakage current in the stacking power-gating technique by three modes - sleep, active and sleep-to-active. The simulation results are performed on a 4 × 4 carry-save multiplier for leakage current, active power, leakage power and ground bounce noise, and comparison made for different nanoscales. Ground bounce noise is limited to 90%. The leakage current of the circuit is decimated up to 80% and the active power is reduced to 31%. We performed simulations using cadence virtuoso 180 and 45 nm at room temperature at various supply voltages.

Advanced 3-V semiconductor technology assessment

NASA Technical Reports Server (NTRS)

Nowogrodzki, M.

1983-01-01

Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.

Double buffer circuit for the characterization of piezoelectric nanogenerators based on ZnO nanowires

NASA Astrophysics Data System (ADS)

Nadaud, Kevin; Morini, François; Dahiya, Abhishek S.; Justeau, Camille; Boubenia, Sarah; Rajeev, Kiron P.; Alquier, Daniel; Poulin-Vittrant, Guylaine

2018-02-01

The accurate and precise measurements of voltage and current output generated by a nanogenerator (NG) are crucial to design the rectifying/harvesting circuit and to evaluate correctly the amount of energy provided by a NG. High internal impedance of the NGs (several MΩ) is the main limiting factor for designing circuits to measure the open circuit voltage. In this paper, we present the influence of the characterization circuit used to measure the generated voltage of piezoelectric NGs. The proposed circuit consists of a differential amplifier which permits us to measure the voltage provided by the NG without applying any parasitic bias to it. The proposed circuit is compared to a commercial electrometer and a homemade buffer circuit based on a voltage follower circuit to show its interest. For the proposed double buffer circuit, no asymmetric behavior has been noticed contrary to the measurements made using a simple buffer circuit and a Keithley electrometer. The proposed double buffer circuit is thus suitable to measure the NG voltage in a transparent way, as an ideal voltage probe should do.

Controllable Bidirectional dc Power Sources For Large Loads

NASA Technical Reports Server (NTRS)

Tripp, John S.; Daniels, Taumi S.

1995-01-01

System redesigned for greater efficiency, durability, and controllability. Modern electronically controlled dc power sources proposed to supply currents to six electromagnets used to position aerodynamic test model in wind tunnel. Six-phase bridge rectifier supplies load with large current at voltage of commanded magnitude and polarity. Current-feedback circuit includes current-limiting feature giving some protection against overload.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Evaluation of Ferrite Chip Beads as Surge Current Limiters in Circuits with Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2014-01-01

Limiting resistors are currently required to be connected in series with tantalum capacitors to reduce the risk of surge current failures. However, application of limiting resistors decreases substantially the efficiency of the power supply systems. An ideal surge current limiting device should have a negligible resistance for DC currents and high resistance at frequencies corresponding to transients in tantalum capacitors. This work evaluates the possibility of using chip ferrite beads (FB) as such devices. Twelve types of small size FBs from three manufacturers were used to evaluate their robustness under soldering stresses and at high surge current spikes associated with transients in tantalum capacitors. Results show that FBs are capable to withstand current pulses that are substantially greater than the specified current limits. However, due to a sharp decrease of impedance with current, FBs do not reduce surge currents to the required level that can be achieved with regular resistors.

Burner ignition system

DOEpatents

Carignan, Forest J.

1986-01-21

An electronic ignition system for a gas burner is battery operated. The battery voltage is applied through a DC-DC chopper to a step-up transformer to charge a capacitor which provides the ignition spark. The step-up transformer has a significant leakage reactance in order to limit current flow from the battery during initial charging of the capacitor. A tank circuit at the input of the transformer returns magnetizing current resulting from the leakage reactance to the primary in succeeding cycles. An SCR in the output circuit is gated through a voltage divider which senses current flow through a flame. Once the flame is sensed, further sparks are precluded. The same flame sensor enables a thermopile driven main valve actuating circuit. A safety valve in series with the main gas valve responds to a control pressure thermostatically applied through a diaphragm. The valve closes after a predetermined delay determined by a time delay orifice if the pilot gas is not ignited.

Coaxial multishell nanowires with high-quality electronic interfaces and tunable optical cavities for ultrathin photovoltaics.

PubMed

Kempa, Thomas J; Cahoon, James F; Kim, Sun-Kyung; Day, Robert W; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2012-01-31

Silicon nanowires (NWs) could enable low-cost and efficient photovoltaics, though their performance has been limited by nonideal electrical characteristics and an inability to tune absorption properties. We overcome these limitations through controlled synthesis of a series of polymorphic core/multishell NWs with highly crystalline, hexagonally-faceted shells, and well-defined coaxial (p/n) and p/intrinsic/n (p/i/n) diode junctions. Designed 200-300 nm diameter p/i/n NW diodes exhibit ultralow leakage currents of approximately 1 fA, and open-circuit voltages and fill-factors up to 0.5 V and 73%, respectively, under one-sun illumination. Single-NW wavelength-dependent photocurrent measurements reveal size-tunable optical resonances, external quantum efficiencies greater than unity, and current densities double those for silicon films of comparable thickness. In addition, finite-difference-time-domain simulations for the measured NW structures agree quantitatively with the photocurrent measurements, and demonstrate that the optical resonances are due to Fabry-Perot and whispering-gallery cavity modes supported in the high-quality faceted nanostructures. Synthetically optimized NW devices achieve current densities of 17 mA/cm(2) and power-conversion efficiencies of 6%. Horizontal integration of multiple NWs demonstrates linear scaling of the absolute photocurrent with number of NWs, as well as retention of the high open-circuit voltages and short-circuit current densities measured for single NW devices. Notably, assembly of 2 NW elements into vertical stacks yields short-circuit current densities of 25 mA/cm(2) with a backside reflector, and simulations further show that such stacking represents an attractive approach for further enhancing performance with projected efficiencies of > 15% for 1.2 μm thick 5 NW stacks.

Electronic simulation of the supported liquid membrane in electromembrane extraction systems: Improvement of the extraction by precise periodical reversing of the field polarity.

PubMed

Moazami, Hamid Reza; Nojavan, Saeed; Zahedi, Pegah; Davarani, Saied Saeed Hosseiny

2014-09-02

In order to understand the limitations of electromebrane extraction procedure better, a simple equivalent circuit has been proposed for a supported liquid membrane consisting of a resistor and a low leakage capacitor in series. To verify the equivalent circuit, it was subjected to a simulated periodical polarity changing potential and the resulting time variation of the current was compared with that of a real electromembrane extraction system. The results showed a good agreement between the simulated current patterns and those of the real ones. In order to investigate the impact of various limiting factors, the corresponding values of the equivalent circuit were estimated for a real electromembrane extraction system and were attributed to the physical parameters of the extraction system. A dual charge transfer mechanism was proposed for electromembrane extraction by combining general migration equation and fundamental aspects derived from the simulation. Dual mechanism comprises a current dependent contribution of analyte in total current and could support the possibility of an improvement in performance of an electromembrane extraction by application of an asymmetric polarity changing potential. The optimization of frequency and duty cycle of the asymmetric polarity exchanging potential resulted in a higher recovery (2.17 times greater) in comparison with the conventional electromebrane extraction. The simulation also provided more quantitative approaches toward the investigation of the mechanism of extraction and contribution of different limiting factors in electromembrane extraction. Results showed that the buildup of the double layer is the main limiting factor and the Joule heating has lesser impact on the performance of an electromebrane extraction system. Copyright © 2014 Elsevier B.V. All rights reserved.

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

NASA Technical Reports Server (NTRS)

Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

1979-01-01

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Alternative model of space-charge-limited thermionic current flow through a plasma

DOE PAGES

Campanell, M. D.

2018-04-19

It is widely assumed that thermionic current flow through a plasma is limited by a “space-charge-limited” (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. In this paper, we formulate a fundamentally different current-limited mode. In the “inverse” mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting themore » circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. Finally, the inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.« less

Alternative model of space-charge-limited thermionic current flow through a plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campanell, M. D.

It is widely assumed that thermionic current flow through a plasma is limited by a “space-charge-limited” (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. In this paper, we formulate a fundamentally different current-limited mode. In the “inverse” mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting themore » circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. Finally, the inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.« less

External short circuit performance of Graphite-LiNi1/3Co1/3Mn1/3O2 and Graphite-LiNi0.8Co0.15Al0.05O2 cells at different external resistances

NASA Astrophysics Data System (ADS)

Kriston, Akos; Pfrang, Andreas; Döring, Harry; Fritsch, Benjamin; Ruiz, Vanesa; Adanouj, Ibtissam; Kosmidou, Theodora; Ungeheuer, Jürgen; Boon-Brett, Lois

2017-09-01

This study aims at analyzing the response of Li-ion cells and at identifying the hazards and governing phenomena from hard to soft external short circuit conditions. 10 Ah pouch cells and 4.5 mAh coin cells were short circuited while synchronized current, potential and temperature signals, audio, IR and visual video recordings were registered. The anode, cathode and separator harvested from the cells were characterized by Scanning Electron Microscopy, micro X-ray Computed Tomography and 3D-profilometry. The complex short circuit behavior obtained can be described by 3 regions: In the first region 274C-rate is observed which is mainly governed by the cell's double and diffusion layer discharge. In the second region, the current drops significantly to 50-60C-rate where mass transport becomes the current limiting factor. The maximum temperature (77-121 °C) is reached and cell rupture, venting and electrolyte leakage may occur. In the final, third region the current decline continues due to the decaying electromotive force. The normalized external/internal resistance ratio is found to be the main influential factor on current and hazards rather than the external resistance or the capacity of the cell. The implications on the relevance and fitness-for-purpose of external short circuit test in standards are outlined.

Metallization failures

NASA Technical Reports Server (NTRS)

Beatty, R.

1971-01-01

Metallization-related failure mechanisms were shown to be a major cause of integrated circuit failures under accelerated stress conditions, as well as in actual use under field operation. The integrated circuit industry is aware of the problem and is attempting to solve it in one of two ways: (1) better understanding of the aluminum system, which is the most widely used metallization material for silicon integrated circuits both as a single level and multilevel metallization, or (2) evaluating alternative metal systems. Aluminum metallization offers many advantages, but also has limitations particularly at elevated temperatures and high current densities. As an alternative, multilayer systems of the general form, silicon device-metal-inorganic insulator-metal, are being considered to produce large scale integrated arrays. The merits and restrictions of metallization systems in current usage and systems under development are defined.

Analysis and elimination method of the effects of cables on LVRT testing for offshore wind turbines

NASA Astrophysics Data System (ADS)

Jiang, Zimin; Liu, Xiaohao; Li, Changgang; Liu, Yutian

2018-02-01

The current state, characteristics and necessity of the low voltage ride through (LVRT) on-site testing for grid-connected offshore wind turbines are introduced firstly. Then the effects of submarine cables on the LVRT testing are analysed based on the equivalent circuit of the testing system. A scheme for eliminating the effects of cables on the proposed LVRT testing method is presented. The specified voltage dips are guaranteed to be in compliance with the testing standards by adjusting the ratio between the current limiting impedance and short circuit impedance according to the steady voltage relationship derived from the equivalent circuit. Finally, simulation results demonstrate that the voltage dips at the high voltage side of wind turbine transformer satisfy the requirements of testing standards.

Battery Cell By-Pass Circuit

NASA Technical Reports Server (NTRS)

Mumaw, Susan J. (Inventor); Evers, Jeffrey (Inventor); Craig, Calvin L., Jr. (Inventor); Walker, Stuart D. (Inventor)

2001-01-01

The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.

Bio-inspired feedback-circuit implementation of discrete, free energy optimizing, winner-take-all computations.

PubMed

Genewein, Tim; Braun, Daniel A

2016-06-01

Bayesian inference and bounded rational decision-making require the accumulation of evidence or utility, respectively, to transform a prior belief or strategy into a posterior probability distribution over hypotheses or actions. Crucially, this process cannot be simply realized by independent integrators, since the different hypotheses and actions also compete with each other. In continuous time, this competitive integration process can be described by a special case of the replicator equation. Here we investigate simple analog electric circuits that implement the underlying differential equation under the constraint that we only permit a limited set of building blocks that we regard as biologically interpretable, such as capacitors, resistors, voltage-dependent conductances and voltage- or current-controlled current and voltage sources. The appeal of these circuits is that they intrinsically perform normalization without requiring an explicit divisive normalization. However, even in idealized simulations, we find that these circuits are very sensitive to internal noise as they accumulate error over time. We discuss in how far neural circuits could implement these operations that might provide a generic competitive principle underlying both perception and action.

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

NASA Astrophysics Data System (ADS)

Encomendero, Jimy; Yan, Rusen; Verma, Amit; Islam, S. M.; Protasenko, Vladimir; Rouvimov, Sergei; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

2018-03-01

We report the generation of room temperature microwave oscillations from GaN/AlN resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling heterostructure grown by molecular beam epitaxy on freestanding GaN substrates comprises a thin GaN quantum well embedded between two AlN tunneling barriers. The room temperature current-voltage characteristics exhibit a record-high maximum peak current density of ˜220 kA/cm2. When biased within the negative differential conductance region, microwave oscillations are measured with a fundamental frequency of ˜0.94 GHz, generating an output power of ˜3.0 μW. Both the fundamental frequency and the output power of the oscillator are limited by the external biasing circuit. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is predicted to be ˜200 GHz. This work represents a significant step towards microwave power generation enabled by resonant tunneling transport, an ultra-fast process that goes beyond the limitations of current III-Nitride high electron mobility transistors.

Comparison of the quench and fault current limiting characteristics of the flux-coupling type SFCL with single and three-phase transformer

NASA Astrophysics Data System (ADS)

Jung, Byung Ik; Cho, Yong Sun; Park, Hyoung Min; Chung, Dong Chul; Choi, Hyo Sang

2013-01-01

The South Korean power grid has a network structure for the flexible operation of the system. The continuously increasing power demand necessitated the increase of power facilities, which decreased the impedance in the power system. As a result, the size of the fault current in the event of a system fault increased. As this increased fault current size is threatening the breaking capacity of the circuit breaker, the main protective device, a solution to this problem is needed. The superconducting fault current limiter (SFCL) has been designed to address this problem. SFCL supports the stable operation of the circuit breaker through its excellent fault-current-limiting operation [1-5]. In this paper, the quench and fault current limiting characteristics of the flux-coupling-type SFCL with one three-phase transformer were compared with those of the same SFCL type but with three single-phase transformers. In the case of the three-phase transformers, both the superconducting elements of the fault and sound phases were quenched, whereas in the case of the single-phase transformer, only that of the fault phase was quenched. For the fault current limiting rate, both cases showed similar rates for the single line-to-ground fault, but for the three-wire earth fault, the fault current limiting rate of the single-phase transformer was over 90% whereas that of the three-phase transformer was about 60%. It appears that when the three-phase transformer was used, the limiting rate decreased because the fluxes by the fault current of each phase were linked in one core. When the power loads of the superconducting elements were compared by fault type, the initial (half-cycle) load was great when the single-phase transformer was applied, whereas for the three-phase transformer, its power load was slightly lower at the initial stage but became greater after the half fault cycle.

Pinch current limitation effect in plasma focus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, S.; Saw, S. H.; INTI International University College, 71800 Nilai

The Lee model couples the electrical circuit with plasma focus dynamics, thermodynamics, and radiation. It is used to design and simulate experiments. A beam-target mechanism is incorporated, resulting in realistic neutron yield scaling with pinch current and increasing its versatility for investigating all Mather-type machines. Recent runs indicate a previously unsuspected 'pinch current limitation' effect. The pinch current does not increase beyond a certain value however low the static inductance is reduced to. The results indicate that decreasing the present static inductance of the PF1000 machine will neither increase the pinch current nor the neutron yield, contrary to expectations.

Alternating-Current Motor Drive for Electric Vehicles

NASA Technical Reports Server (NTRS)

Krauthamer, S.; Rippel, W. E.

1982-01-01

New electric drive controls speed of a polyphase as motor by varying frequency of inverter output. Closed-loop current-sensing circuit automatically adjusts frequency of voltage-controlled oscillator that controls inverter frequency, to limit starting and accelerating surges. Efficient inverter and ac motor would give electric vehicles extra miles per battery charge.

Solid-state power controller

NASA Technical Reports Server (NTRS)

Fox, D. A.; Fullemann, J. S.

1980-01-01

Compact, solid state, electric-power controller switches power on and off at remote load, limits current drawn by load, and shuts off (with 2- to 3- second trip time) in case of short circuit. Lightweight efficient hybrid unit operates at 28 volts dc and at maximum currents of from 3 to 2 amperes.

MgB2-based superconductors for fault current limiters

NASA Astrophysics Data System (ADS)

Sokolovsky, V.; Prikhna, T.; Meerovich, V.; Eisterer, M.; Goldacker, W.; Kozyrev, A.; Weber, H. W.; Shapovalov, A.; Sverdun, V.; Moshchil, V.

2017-02-01

A promising solution of the fault current problem in power systems is the application of fast-operating nonlinear superconducting fault current limiters (SFCLs) with the capability of rapidly increasing their impedance, and thus limiting high fault currents. We report the results of experiments with models of inductive (transformer type) SFCLs based on the ring-shaped bulk MgB2 prepared under high quasihydrostatic pressure (2 GPa) and by hot pressing technique (30 MPa). It was shown that the SFCLs meet the main requirements to fault current limiters: they possess low impedance in the nominal regime of the protected circuit and can fast increase their impedance limiting both the transient and the steady-state fault currents. The study of quenching currents of MgB2 rings (SFCL activation current) and AC losses in the rings shows that the quenching current density and critical current density determined from AC losses can be 10-20 times less than the critical current determined from the magnetization experiments.

Unexpected Nonlinear Effects in Superconducting Transition-Edge Sensors

NASA Technical Reports Server (NTRS)

Sadleir, John

2016-01-01

When a normal metal transitions into the superconducting state the DC resistance drops from a finite value to zero over some finite transition width in temperature, current, and magnetic field. Superconducting transition-edge sensors (TESs) operate within this transition region and uses resistive changes to measure deposited thermal energy. This resistive transition is not perfectly smooth and a wide range of TES designs and materials show sub-structure in the resistive transition (as seen in smooth nonmonotonic behavior, jump discontinuities, and hysteresis in the devices current-voltage relation and derivatives of the resistance with respect to temperature, bias current, and magnetic field). TES technology has advanced to the point where for many applications this structure is the limiting factor in performance and optimization consists of finding operating points away from these structures. For example, operating at or near this structure can lead to nonlinearity in the detectors response and gain scale, limit the spectral range of the detector by limiting the usable resistive range, and degrade energy resolution. The origin of much of this substructure is unknown. This presentation investigates a number of possible sources in turn. First we model the TES as a superconducting weak-link and solve for the characteristic differential equations current and voltage time dependence. We find:(1) measured DC biased current-voltage relationship is the time-average of a much higher frequency limit cycle solution.(2) We calculate the fundamental frequency and estimate the power radiated from the TES treating the bias leads as an antennae.(3) The solution for a set of circuit parameters becomes multivalued leading to current transitions between levels.(4)The circuit parameters can change the measure resistance and mask the true critical current. As a consequence the TES resistance surface is not just a function of temperature, current, and magnetic field but is also a function of the circuit elements (such as shunt resistor, SQUID inductance, and capacitor values). In other words, same device measured in different electrical circuits will have a different resistive surface in temperature, current, and magnetic field. Next we consider that at the transition temperature of a superconductor both the magnetic penetration depth and coherence length are divergent. As a consequence these important characteristic length scales are changing with operating point. We present measurements on devices showing commensurate behavior between these characteristic lengths and the length scale of added normal metal structures. Reordering of proximity vortices leads to discontinuities and irreversibility of the current-voltage curves. Last we consider a weak-link TES including both thermal activated resistance effects and the effect of the magnetic penetration depth being a function of temperature and magnetic field. We derive its impact on the resistive transition surface and the important device parameters a and b.

Field-effect transistor improves electrometer amplifier

NASA Technical Reports Server (NTRS)

Munoz, R.

1964-01-01

An electrometer amplifier uses a field effect transistor to measure currents of low amperage. The circuit, developed as an ac amplifier, is used with an external filter which limits bandwidth to achieve optimum noise performance.

Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

PubMed

Malits, Maria; Brouk, Igor; Nemirovsky, Yael

2018-05-19

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Development of compact rapid charging power supply for capacitive energy storage in pulsed power drivers.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2015-02-01

High energy capacitor bank is used for primary electrical energy storage in pulsed power drivers. The capacitors used in these pulsed power drivers have low inductance, low internal resistance, and less dc life, so it has to be charged rapidly and immediately discharged into the load. A series resonant converter based 45 kV compact power supply is designed and developed for rapid charging of the capacitor bank with constant charging current up to 150 mA. It is short circuit proof, and zero current switching technique is used to commute the semiconductor switch. A high frequency resonant inverter switching at 10 kHz makes the overall size small and reduces the switching losses. The output current of the power supply is limited by constant on-time and variable frequency switching control technique. The power supply is tested by charging the 45 kV/1.67 μF and 15 kV/356 μF capacitor banks. It has charged the capacitor bank up to rated voltage with maximum charging current of 150 mA and the average charging rate of 3.4 kJ/s. The output current of the power supply is limited by reducing the switching frequency at 5 kHz, 3.3 kHz, and 1.7 kHz and tested with 45 kV/1.67 μF capacitor bank. The protection circuit is included in the power supply for over current, under voltage, and over temperature. The design details and the experimental testing results of the power supply for resonant current, output current, and voltage traces of the power supply with capacitive, resistive, and short circuited load are presented and discussed.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2011 CFR

2011-07-01

...-phase alternating current equipment; circuit breakers. 75.900 Section 75.900 Mineral Resources MINE... Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers. [Statutory Provisions] Low- and medium-voltage power circuits serving three-phase alternating current...

Fill factor in organic solar cells can exceed the Shockley-Queisser limit

NASA Astrophysics Data System (ADS)

Trukhanov, Vasily A.; Bruevich, Vladimir V.; Paraschuk, Dmitry Yu.

2015-06-01

The ultimate efficiency of organic solar cells (OSC) is under active debate. The solar cell efficiency is calculated from the current-voltage characteristic as a product of the open-circuit voltage (VOC), short-circuit current (JSC), and the fill factor (FF). While the factors limiting VOC and JSC for OSC were extensively studied, the ultimate FF for OSC is scarcely explored. Using numerical drift-diffusion modeling, we have found that the FF in OSC can exceed the Shockley-Queisser limit (SQL) established for inorganic p-n junction solar cells. Comparing charge generation and recombination in organic donor-acceptor bilayer heterojunction and inorganic p-n junction, we show that such distinctive properties of OSC as interface charge generation and heterojunction facilitate high FF, but the necessary condition for FF exceeding the SQL in OSC is field-dependence of charge recombination at the donor-acceptor interface. These findings can serve as a guideline for further improvement of OSC.

Overcoming limitations of model-based diagnostic reasoning systems

NASA Technical Reports Server (NTRS)

Holtzblatt, Lester J.; Marcotte, Richard A.; Piazza, Richard L.

1989-01-01

The development of a model-based diagnostic system to overcome the limitations of model-based reasoning systems is discussed. It is noted that model-based reasoning techniques can be used to analyze the failure behavior and diagnosability of system and circuit designs as part of the system process itself. One goal of current research is the development of a diagnostic algorithm which can reason efficiently about large numbers of diagnostic suspects and can handle both combinational and sequential circuits. A second goal is to address the model-creation problem by developing an approach for using design models to construct the GMODS model in an automated fashion.

Detection limit of a VCO based detection chain dedicated to particles recognition and tracking

NASA Astrophysics Data System (ADS)

Coulié, K.; Rahajandraibe, W.; Aziza, H.; Micolau, G.; Vauché, R.

2018-01-01

A particle detection chain based on CMOS-SOI VCO circuit is presented. The solution is used for the recognition and the tracking of a given particle at circuit level. TCAD simulation of the detector has been performed on a 3×3 matrix of diodes based detector for particles recognition and tracking. The current response of the detector has been used for a case study in order to determine the ability of the chain to recognize an alpha particle crossing a 3×3 detection cell. The detection limit of the proposed solution is investigated and discussed in this paper.

Improvements of low-detection-limit filter-free fluorescence sensor developed by charge accumulation operation

NASA Astrophysics Data System (ADS)

Tanaka, Kiyotsugu; Choi, Yong Joon; Moriwaki, Yu; Hizawa, Takeshi; Iwata, Tatsuya; Dasai, Fumihiro; Kimura, Yasuyuki; Takahashi, Kazuhiro; Sawada, Kazuaki

2017-04-01

We developed a low-detection-limit filter-free fluorescence sensor by a charge accumulation technique. For charge accumulation, a floating diffusion amplifier (FDA), which included a floating diffusion capacitor, a transfer gate, and a source follower circuit, was used. To integrate CMOS circuits with the filter-free fluorescence sensor, we adopted a triple-well process to isolate transistors from the sensor on a single chip. We detected 0.1 nW fluorescence under the illumination of excitation light by 1.5 ms accumulation, which was one order of magnitude greater than that of a previous current detection sensor.

Fractal dendrite-based electrically conductive composites for laser-scribed flexible circuits

PubMed Central

Yang, Cheng; Cui, Xiaoya; Zhang, Zhexu; Chiang, Sum Wai; Lin, Wei; Duan, Huan; Li, Jia; Kang, Feiyu; Wong, Ching-Ping

2015-01-01

Fractal metallic dendrites have been drawing more attentions recently, yet they have rarely been explored in electronic printing or packaging applications because of the great challenges in large-scale synthesis and limited understanding in such applications. Here we demonstrate a controllable synthesis of fractal Ag micro-dendrites at the hundred-gram scale. When used as the fillers for isotropically electrically conductive composites (ECCs), the unique three-dimensional fractal geometrical configuration and low-temperature sintering characteristic render the Ag micro dendrites with an ultra-low electrical percolation threshold of 0.97 vol% (8 wt%). The ultra-low percolation threshold and self-limited fusing ability may address some critical challenges in current interconnect technology for microelectronics. For example, only half of the laser-scribe energy is needed to pattern fine circuit lines printed using the present ECCs, showing great potential for wiring ultrathin circuits for high performance flexible electronics. PMID:26333352

High-voltage, high-power, solid-state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Process Research on Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

2017-03-01

We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

Three-phase short circuit calculation method based on pre-computed surface for doubly fed induction generator

NASA Astrophysics Data System (ADS)

Ma, J.; Liu, Q.

2018-02-01

This paper presents an improved short circuit calculation method, based on pre-computed surface to determine the short circuit current of a distribution system with multiple doubly fed induction generators (DFIGs). The short circuit current, injected into power grid by DFIG, is determined by low voltage ride through (LVRT) control and protection under grid fault. However, the existing methods are difficult to calculate the short circuit current of DFIG in engineering practice due to its complexity. A short circuit calculation method, based on pre-computed surface, was proposed by developing the surface of short circuit current changing with the calculating impedance and the open circuit voltage. And the short circuit currents were derived by taking into account the rotor excitation and crowbar activation time. Finally, the pre-computed surfaces of short circuit current at different time were established, and the procedure of DFIG short circuit calculation considering its LVRT was designed. The correctness of proposed method was verified by simulation.

Micro- and Macroscale Ideas of Current among Upper-Division Electrical Engineering Students

ERIC Educational Resources Information Center

Adam, Gina C.; Harlow, Danielle B.; Lord, Susan M.; Kautz, Christian H.

2017-01-01

The concept of electric current is fundamental in the study of electrical engineering (EE). Students are often exposed to this concept in their daily lives and early in middle school education. Lower-division university courses are usually limited to the study of passive electronic devices and simple electric circuits. Semiconductor physics is an…

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1989-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1990-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, R.B.; Bowman, D.R.

1989-04-11

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Flux-lock type of superconducting fault current limiters: A comprehensive review

NASA Astrophysics Data System (ADS)

Badakhshan, M.; Mousavi G., S. M.

2018-04-01

Power systems must be developed and extended to supply the continuous enhancement of demands for electrical energy. This development of systems in addition to the integration of distributed generation (DG) units to the power systems results higher capacity of system. Hence, short circuit current of network is confronted with persistent increasing. Since exploration of high temperature superconducting (HTS) materials, superconducting fault current limiters (SFCLs) have attracted a lot of attention all over the world. There are different types of SFCLs. Flux-lock type of SFCL because of its characteristics in fault current limitation is an important category of SFCLs. This paper aims to present a comprehensive review of research activities and applications of Flux-lock type of SFCLs in power systems.

Optical feedback technique extends frequency response of photoconductors

NASA Technical Reports Server (NTRS)

Katzberg, S. J.

1975-01-01

Feedback circuit consists of high-gain light-to-voltage converter with frequency-limited nonlinear photoconductor inside feedback loop. Feedback element is visible light-emitting diode with light-out versus current-in characteristic that is linear over several decades.

Neural Representation of a Target Auditory Memory in a Cortico-Basal Ganglia Pathway

PubMed Central

Bottjer, Sarah W.

2013-01-01

Vocal learning in songbirds, like speech acquisition in humans, entails a period of sensorimotor integration during which vocalizations are evaluated via auditory feedback and progressively refined to achieve an imitation of memorized vocal sounds. This process requires the brain to compare feedback of current vocal behavior to a memory of target vocal sounds. We report the discovery of two distinct populations of neurons in a cortico-basal ganglia circuit of juvenile songbirds (zebra finches, Taeniopygia guttata) during vocal learning: (1) one in which neurons are selectively tuned to memorized sounds and (2) another in which neurons are selectively tuned to self-produced vocalizations. These results suggest that neurons tuned to learned vocal sounds encode a memory of those target sounds, whereas neurons tuned to self-produced vocalizations encode a representation of current vocal sounds. The presence of neurons tuned to memorized sounds is limited to early stages of sensorimotor integration: after learning, the incidence of neurons encoding memorized vocal sounds was greatly diminished. In contrast to this circuit, neurons known to drive vocal behavior through a parallel cortico-basal ganglia pathway show little selective tuning until late in learning. One interpretation of these data is that representations of current and target vocal sounds in the shell circuit are used to compare ongoing patterns of vocal feedback to memorized sounds, whereas the parallel core circuit has a motor-related role in learning. Such a functional subdivision is similar to mammalian cortico-basal ganglia pathways in which associative-limbic circuits mediate goal-directed responses, whereas sensorimotor circuits support motor aspects of learning. PMID:24005299

Parallel Quantum Circuit in a Tunnel Junction

NASA Astrophysics Data System (ADS)

Faizy Namarvar, Omid; Dridi, Ghassen; Joachim, Christian; GNS theory Group Team

In between 2 metallic nanopads, adding identical and independent electron transfer paths in parallel increases the electronic effective coupling between the 2 nanopads through the quantum circuit defined by those paths. Measuring this increase of effective coupling using the tunnelling current intensity can lead for example for 2 paths in parallel to the now standard G =G1 +G2 + 2√{G1 .G2 } conductance superposition law (1). This is only valid for the tunnelling regime (2). For large electronic coupling to the nanopads (or at resonance), G can saturate and even decay as a function of the number of parallel paths added in the quantum circuit (3). We provide here the explanation of this phenomenon: the measurement of the effective Rabi oscillation frequency using the current intensity is constrained by the normalization principle of quantum mechanics. This limits the quantum conductance G for example to go when there is only one channel per metallic nanopads. This ef fect has important consequences for the design of Boolean logic gates at the atomic scale using atomic scale or intramolecular circuits. References: This has the financial support by European PAMS project.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Space-charge limited current in CdTe thin film solar cell

NASA Astrophysics Data System (ADS)

Li, Qiang; Shen, Kai; Li, Xun; Yang, Ruilong; Deng, Yi; Wang, Deliang

2018-04-01

In this study, we demonstrate that space-charge limited current (SCLC) is an intrinsic current shunting leakage in CdTe thin film solar cells. The SCLC leakage channel, which is formed by contact between the front electrode, CdTe, and the back electrode, acts as a metal-semiconductor-metal (MSM) like transport path. The presence of SCLC leaking microchannels in CdTe leads to a band bending at the MSM structure, which enhances minority carrier recombination and thus decreases the minority carrier lifetime in CdTe thin film solar cells. SCLC was found to be a limiting factor both for the fill factor and the open-circuit voltage of CdTe thin film solar cells.

Self-calibrating multiplexer circuit

DOEpatents

Wahl, Chris P.

1997-01-01

A time domain multiplexer system with automatic determination of acceptable multiplexer output limits, error determination, or correction is comprised of a time domain multiplexer, a computer, a constant current source capable of at least three distinct current levels, and two series resistances employed for calibration and testing. A two point linear calibration curve defining acceptable multiplexer voltage limits may be defined by the computer by determining the voltage output of the multiplexer to very accurately known input signals developed from predetermined current levels across the series resistances. Drift in the multiplexer may be detected by the computer when the output voltage limits, expected during normal operation, are exceeded, or the relationship defined by the calibration curve is invalidated.

Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

DOE PAGES

Wang, Qi; Bi, Cheng; Huang, Jinsong

2015-05-06

We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

Analog bus driver and multiplexer

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Hancock, Bruce (Inventor); Cunningham, Thomas J. (Inventor)

2012-01-01

For a source-follower signal chain, the ohmic drop in the selection switch causes unacceptable voltage offset, non-linearity, and reduced small signal gain. For an op amp signal chain, the required bias current and the output noise rises rapidly with increasing the array format due to a rapid increase in the effective capacitance caused by the Miller effect boosting up the contribution of the bus capacitance. A new switched source-follower signal chain circuit overcomes limitations of existing op-amp based or source follower based circuits used in column multiplexers and data readout. This will improve performance of CMOS imagers, and focal plane read-out integrated circuits for detectors of infrared or ultraviolet light.

Automatic Locker Key With Barcode Based Microcontroller Atmega 8535

NASA Astrophysics Data System (ADS)

Fahmi, M. Irfan; Efendi Hutagalung, Jhonson

2017-12-01

MCB (miniature circuit breaker) is an electromagnetic device that embodies complete enclosure in a molded insulating material. The main function of an MCB is to switch the circuit, i.e., to open the circuit (which has been connected to it) automatically when the current passing through it (MCB) exceeds the value for which it is set. Unlike fuse, an MCB can be easily reset and thus offers improved operational safety and greater convenience without incurring large operating cost.The principal of operation is simple. In simple terms MCB is a switch which automatically turns off when the current flowing through it passes the maximum allowable limit. Generally MCB are designed to protect against over current and over temperature faults (over heating). Sometimes the overload the current through the bimetal causes to raise the temperature of it. The heat generated within the bimetal itself enough to cause deflection due to thermal expansion of metals. This solution is used by LDR, and LM 35 as the sencor to control center. Therefore it is very important because it is related about local control switches, isolating switches against faults and overload protection devices for installations or specific equipments or appliances

Gustatory and reward brain circuits in the control of food intake

PubMed Central

Oliveira-Maia, Albino J.; Roberts, Craig D.; Simon, Sidney A.; Nicolelis, Miguel A.L.

2012-01-01

Gustation is a multisensory process allowing for the selection of nutrients and the rejection of irritating and/or toxic compounds. Since obesity is a highly prevalent condition that is critically dependent on food intake and energy expenditure, a deeper understanding of gustatory processing is an important objective in biomedical research. Recent findings have provided evidence that central gustatory processes are distributed across several cortical and sub-cortical brain areas. Furthermore, these gustatory sensory circuits are closely related to the circuits that process reward. Here, we present an overview of the activation and connectivity between central gustatory and reward areas. Moreover, and given the limitations in number and effectiveness of treatments currently available for overweight patients, we discuss the possibility of modulating neuronal activity in these circuits as an alternative in the treatment of obesity. PMID:21197607

Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

NASA Technical Reports Server (NTRS)

Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

1985-01-01

The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

CIRCUITS FOR CURRENT MEASUREMENTS

DOEpatents

Cox, R.J.

1958-11-01

Circuits are presented for measurement of a logarithmic scale of current flowing in a high impedance. In one form of the invention the disclosed circuit is in combination with an ionization chamber to measure lonization current. The particular circuit arrangement lncludes a vacuum tube having at least one grid, an ionization chamber connected in series with a high voltage source and the grid of the vacuum tube, and a d-c amplifier feedback circuit. As the ionization chamber current passes between the grid and cathode of the tube, the feedback circuit acts to stabilize the anode current, and the feedback voltage is a measure of the logaritbm of the ionization current.

A Integrated Circuit for a Biomedical Capacitive Pressure Transducer

NASA Astrophysics Data System (ADS)

Smith, Michael John Sebastian

Medical research has an urgent need for a small, accurate, stable, low-power, biocompatible and inexpensive pressure sensor with a zero to full-scale range of 0-300 mmHg. An integrated circuit (IC) for use with a capacitive pressure transducer was designed, built and tested. The random pressure measurement error due to resolution and non-linearity is (+OR-)0.4 mmHg (at mid-range with a full -scale of 300 mmHg). The long-term systematic error due to falling battery voltage is (+OR-)0.6 mmHg. These figures were calculated from measurements of temperature, supply dependence and non-linearity on completed integrated circuits. The sensor IC allows measurement of temperature to (+OR-)0.1(DEGREES)C to allow for temperature compensation of the transducer. Novel micropower circuit design of the system components enabled these levels of accuracy to be reached. Capacitance is measured by a new ratiometric scheme employing an on -chip reference capacitor. This method greatly reduces the effects of voltage supply, temperature and manufacturing variations on the sensor circuit performance. The limits on performance of the bandgap reference circuit fabricated with a standard bipolar process using ion-implanted resistors were determined. Measurements confirm the limits of temperature stability as approximately (+OR-)300 ppm/(DEGREES)C. An exact analytical expression for the period of the Schmitt trigger oscillator, accounting for non-constant capacitor charging current, was formulated. Experiments to test agreement with theory showed that prediction of the oscillator period was very accurate. The interaction of fundamental and practical limits on the scaling of the transducer size was investigated including a correction to previous theoretical analysis of jitter in an RC oscillator. An areal reduction of 4 times should be achievable.

Faster Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Johnson, Daniel D.; Walker, Daniel D.

1993-01-01

Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

n-B-pi-p Superlattice Infrared Detector

NASA Technical Reports Server (NTRS)

Ting, David Z.; Bandara, Sumith V.; Hill, Cory J.; Gunapala, Sarath D.

2011-01-01

A specially designed barrier (B) is inserted at the n-pi junction [where most GR (generation-recombination) processes take place] in the standard n-pi-p structure to substantially reduce generation-recombination dark currents. The resulting n-Bpi- p structure also has reduced tunneling dark currents, thereby solving some of the limitations to which current type II strained layer superlattice infrared detectors are prone. This innovation is compatible with common read-out integrated circuits (ROICs).

Substantial Expansion of Detectable Size Range in Ionic Current Sensing through Pores by Using a Microfluidic Bridge Circuit.

PubMed

Yasaki, Hirotoshi; Yasui, Takao; Yanagida, Takeshi; Kaji, Noritada; Kanai, Masaki; Nagashima, Kazuki; Kawai, Tomoji; Baba, Yoshinobu

2017-10-11

Measuring ionic currents passing through nano- or micropores has shown great promise for the electrical discrimination of various biomolecules, cells, bacteria, and viruses. However, conventional measurements have shown there is an inherent limitation to the detectable particle volume (1% of the pore volume), which critically hinders applications to real mixtures of biomolecule samples with a wide size range of suspended particles. Here we propose a rational methodology that can detect samples with the detectable particle volume of 0.01% of the pore volume by measuring a transient current generated from the potential differences in a microfluidic bridge circuit. Our method substantially suppresses the background ionic current from the μA level to the pA level, which essentially lowers the detectable particle volume limit even for relatively large pore structures. Indeed, utilizing a microscale long pore structure (volume of 5.6 × 10 4 aL; height and width of 2.0 × 2.0 μm; length of 14 μm), we successfully detected various samples including polystyrene nanoparticles (volume: 4 aL), bacteria, cancer cells, and DNA molecules. Our method will expand the applicability of ionic current sensing systems for various mixed biomolecule samples with a wide size range, which have been difficult to measure by previously existing pore technologies.

Gate drive latching circuit for an auxiliary resonant commutation circuit

NASA Technical Reports Server (NTRS)

Delgado, Eladio Clemente (Inventor); Kheraluwala, Mustansir Hussainy (Inventor)

1999-01-01

A gate drive latching circuit for an auxiliary resonant commutation circuit for a power switching inverter includes a current monitor circuit providing a current signal to a pair of analog comparators to implement latching of one of a pair of auxiliary switching devices which are used to provide commutation current for commutating switching inverters in the circuit. Each of the pair of comparators feeds a latching circuit which responds to an active one of the comparators for latching the associated gate drive circuit for one of the pair of auxiliary commutating switches. An initial firing signal is applied to each of the commutating switches to gate each into conduction and the resulting current is monitored to determine current direction and therefore the one of the switches which is carrying current. The comparator provides a latching signal to the one of the auxiliary power switches which is actually conducting current and latches that particular power switch into an on state for the duration of current through the device. The latching circuit is so designed that the only time one of the auxiliary switching devices can be latched on is during the duration of an initial firing command signal.

Current distribution in a three-dimensional IC analyzed by a perturbation method. Part 1: A simple steady state theory

NASA Technical Reports Server (NTRS)

Edmonds, Larry D.

1987-01-01

The steady state current distribution in a three dimensional integrated circuit is presented. A device physics approach, based on a perturbation method rather than an equivalent lumped circuit approach, is used. The perturbation method allows the various currents to be expressed in terms of elementary solutions which are solutions to very simple boundary value problems. A Simple Steady State Theory is the subtitle because the most obvious limitation of the present version of the analysis is that all depletion region boundary surfaces are treated as equipotential surfaces. This may be an adequate approximation in some applications but it is an obvious weakness in the theory when applied to latched states. Examples that illustrate the use of these analytical methods are not given because they will be presented in detail in the future.

Electrical leakage detection circuit

DOEpatents

Wild, Arthur

2006-09-05

A method is provided for detecting electrical leakage between a power supply and a frame of a vehicle or machine. The disclosed method includes coupling a first capacitor between a frame and a first terminal of a power supply for a predetermined period of time. The current flowing between the frame and the first capacitor is limited to a predetermined current limit. It is determined whether the voltage across the first capacitor exceeds a threshold voltage. A first output signal is provided when the voltage across the capacitor exceeds the threshold voltage.

Design and Performance Analysis of an Intrinsically Safe Ultrasonic Ranging Sensor

PubMed Central

Zhang, Hongjuan; Wang, Yu; Zhang, Xu; Wang, Dong; Jin, Baoquan

2016-01-01

In flammable or explosive environments, an ultrasonic sensor for distance measurement poses an important engineering safety challenge, because the driving circuit uses an intermediate frequency transformer as an impedance transformation element, in which the produced heat or spark is available for ignition. In this paper, an intrinsically safe ultrasonic ranging sensor is designed and implemented. The waterproof piezoelectric transducer with integrated transceiver is chosen as an energy transducing element. Then a novel transducer driving circuit is designed based on an impedance matching method considering safety spark parameters to replace an intermediate frequency transformer. Then, an energy limiting circuit is developed to achieve dual levels of over-voltage and over-current protection. The detail calculation and evaluation are executed and the electrical characteristics are analyzed to verify the intrinsic safety of the driving circuit. Finally, an experimental platform of the ultrasonic ranging sensor system is constructed, which involves short-circuit protection. Experimental results show that the proposed ultrasonic ranging sensor is excellent in both ranging performance and intrinsic safety. PMID:27304958

Design and Performance Analysis of an Intrinsically Safe Ultrasonic Ranging Sensor.

PubMed

Zhang, Hongjuan; Wang, Yu; Zhang, Xu; Wang, Dong; Jin, Baoquan

2016-06-13

In flammable or explosive environments, an ultrasonic sensor for distance measurement poses an important engineering safety challenge, because the driving circuit uses an intermediate frequency transformer as an impedance transformation element, in which the produced heat or spark is available for ignition. In this paper, an intrinsically safe ultrasonic ranging sensor is designed and implemented. The waterproof piezoelectric transducer with integrated transceiver is chosen as an energy transducing element. Then a novel transducer driving circuit is designed based on an impedance matching method considering safety spark parameters to replace an intermediate frequency transformer. Then, an energy limiting circuit is developed to achieve dual levels of over-voltage and over-current protection. The detail calculation and evaluation are executed and the electrical characteristics are analyzed to verify the intrinsic safety of the driving circuit. Finally, an experimental platform of the ultrasonic ranging sensor system is constructed, which involves short-circuit protection. Experimental results show that the proposed ultrasonic ranging sensor is excellent in both ranging performance and intrinsic safety.

Analysis of the capability to effectively design complementary metal oxide semiconductor integrated circuits

NASA Astrophysics Data System (ADS)

McConkey, M. L.

1984-12-01

A complete CMOS/BULK design cycle has been implemented and fully tested to evaluate its effectiveness and a viable set of computer-aided design tools for the layout, verification, and simulation of CMOS/BULK integrated circuits. This design cycle is good for p-well, n-well, or twin-well structures, although current fabrication technique available limit this to p-well only. BANE, an integrated layout program from Stanford, is at the center of this design cycle and was shown to be simple to use in the layout of CMOS integrated circuits (it can be also used to layout NMOS integrated circuits). A flowchart was developed showing the design cycle from initial layout, through design verification, and to circuit simulation using NETLIST, PRESIM, and RNL from the University of Washington. A CMOS/BULK library was designed and includes logic gates that were designed and completely tested by following this flowchart. Also designed was an arithmetic logic unit as a more complex test of the CMOS/BULK design cycle.

Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Soft-Matter Printed Circuit Board with UV Laser Micropatterning.

PubMed

Lu, Tong; Markvicka, Eric J; Jin, Yichu; Majidi, Carmel

2017-07-05

When encapsulated in elastomer, micropatterned traces of Ga-based liquid metal (LM) can function as elastically deformable circuit wiring that provides mechanically robust electrical connectivity between solid-state elements (e.g., transistors, processors, and sensor nodes). However, LM-microelectronics integration is currently limited by challenges in rapid fabrication of LM circuits and the creation of vias between circuit terminals and the I/O pins of packaged electronics. In this study, we address both with a unique layup for soft-matter electronics in which traces of liquid-phase Ga-In eutectic (EGaIn) are patterned with UV laser micromachining (UVLM). The terminals of the elastomer-sealed LM circuit connect to the surface mounted chips through vertically aligned columns of EGaIn-coated Ag-Fe 2 O 3 microparticles that are embedded within an interfacial elastomer layer. The processing technique is compatible with conventional UVLM printed circuit board (PCB) prototyping and exploits the photophysical ablation of EGaIn on an elastomer substrate. Potential applications to wearable computing and biosensing are demonstrated with functional implementations in which soft-matter PCBs are populated with surface-mounted microelectronics.

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2011 CFR

2011-07-01

... portable or mobile three-phase alternating current equipment; circuit breakers. 77.900 Section 77.900... mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits supplying power to portable or mobile three-phase alternating current equipment shall be protected by...

Current-limiting and ultrafast system for the characterization of resistive random access memories.

PubMed

Diaz-Fortuny, J; Maestro, M; Martin-Martinez, J; Crespo-Yepes, A; Rodriguez, R; Nafria, M; Aymerich, X

2016-06-01

A new system for the ultrafast characterization of resistive switching phenomenon is developed to acquire the current during the Set and Reset process in a microsecond time scale. A new electronic circuit has been developed as a part of the main setup system, which is capable of (i) applying a hardware current limit ranging from nanoampers up to miliampers and (ii) converting the Set and Reset exponential gate current range into an equivalent linear voltage. The complete system setup allows measuring with a microsecond resolution. Some examples demonstrate that, with the developed setup, an in-depth analysis of resistive switching phenomenon and random telegraph noise can be made.

Attention as an effect not a cause

PubMed Central

Krauzlis, Richard J.; Bollimunta, Anil; Arcizet, Fabrice; Wang, Lupeng

2014-01-01

Attention is commonly thought to be important for managing the limited resources available in sensory areas of neocortex. Here we present an alternative view that attention arises as a byproduct of circuits centered on the basal ganglia involved in value-based decision-making. The central idea is that decision-making depends on properly estimating the current state of the animal and its environment, and that the weighted inputs to the currently prevailing estimate give rise to the filter-like properties of attention. After outlining this new framework, we describe findings from physiology, anatomy, computational and clinical work that support this point of view. We conclude that the brain mechanisms responsible for attention employ a conserved circuit motif that predates the emergence of the neocortex. PMID:24953964

Another Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Thibodeau, Phillip E.; Sullender, Craig C.

1993-01-01

Lightweight, low-power circuit provides noncontact measurement of alternating or direct current of many ampheres in main conductor. Advantages of circuit over other nulling Hall-effect current-measuring circuits is stability and accuracy increased by putting both analog-to-digital and digital-to-analog converters in nulling feedback loop. Converters and rest of circuit designed for operation at sampling rate of 100 kHz, but rate changed to alter time or frequency response of circuit.

Microwave Photon Detector in Circuit QED

NASA Astrophysics Data System (ADS)

Garcia-Ripoll, Juan Jose; Romero, Guillermo; Solano, Enrique

2009-03-01

In this work we propose a design for a microwave photodetector based on elements from circuit QED such as the ones used in qubit designs. Our proposal consists on a microwave guide in which we embed circuital elements that can absorb photons and irreversibly change state. These incoherent absorption processes constitute the measurement itself. We first model this design using a general master equation for the propagating photons and the absorbing elements. We find that the detection efficiency for a single absorber is limited to 50%, and that this efficiency can be quickly increased by adding more elements with a moderate separation, obtaining 80% and 90% for two and three absorbers. Our abstract design has at least one possible implementation in which the absorbers are current biased Josephson junction. We demonstrate that the coupling between the guide and the junctions is strong enough, irrespectively of the microwave guide size, and derivate realistic parameters for high fidelity operation with current experiments. Patent pending No. 200802933, Oficina Espanola de Patentes y Marcas, 17/10/2008.

Microfabrication of low-loss lumped-element Josephson circuits for non-reciprocal and parametric devices

NASA Astrophysics Data System (ADS)

Cicak, Katarina; Lecocq, Florent; Ranzani, Leonardo; Peterson, Gabriel A.; Kotler, Shlomi; Teufel, John D.; Simmonds, Raymond W.; Aumentado, Jose

Recent developments in coupled mode theory have opened the doors to new nonreciprocal amplification techniques that can be directly leveraged to produce high quantum efficiency in current measurements in microwave quantum information. However, taking advantage of these techniques requires flexible multi-mode circuit designs comprised of low-loss materials that can be implemented using common fabrication techniques. In this talk we discuss the design and fabrication of a new class of multi-pole lumped-element superconducting parametric amplifiers based on Nb/Al-AlOx/Nb Josephson junctions on silicon or sapphire. To reduce intrinsic loss in these circuits we utilize PECVD amorphous silicon as a low-loss dielectric (tanδ 5 ×10-4), resulting in nearly quantum-limited directional amplification.

Development of a standardized control module for dc-to-dc converters

NASA Technical Reports Server (NTRS)

Yu, Y.; Iwens, R. I.; Lee, F. C.; Inouye, L. Y.

1977-01-01

The electrical performance of a power processor depends on the quality of its control system. Most of the existing control circuits suffer one or more of the following imperfections that tend to restrict their respective utility: (1) inability to perform different modes of duty cycle control; (2) lack of immunity to output filter parameter changes, and (3) lack of capability to provide power component stress limiting on an instantaneous basis. The three lagging aspects of existing control circuits have been used to define the major objectives of the current Standardized Control Module (SCM) Program. Detailed information on the SCM functional block diagram, its universality, and performance features, circuit description, test results, and modeling and analysis efforts are presented.

Characterization of copper and nichrome wires for safety fuse

NASA Astrophysics Data System (ADS)

Murdani, E.

2016-11-01

Fuse is an important component of an electrical circuit to limiting the current through the electrical circuit for electrical equipment safety. Safety fuses are made of a conductor such as copper and nichrome wires. The aim of this research was to determine the maximum current that can flow in the conductor wires (copper and nichrome). In the experiment used copper and nichrome wires by varying the length of wires (0.2 cm to 20 cm) and diameter of wires (0.1, 0.2, 0.3, 0.4 and 0.5) mm until maximum current reached that marked by melted or broken wire. From this experiment, it will be obtained the dependences data of maximum current to the length and diameter of wires. All data are plotted and it's known as a standard curve. The standard curve will provide an alternative choice of replacing fuse wire according to the maximum current requirement, including the wire type (copper and nichrome wires) and wire dimensions (length and diameter of wire).

A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

NASA Technical Reports Server (NTRS)

Tripp, John S.; Daniels, Taumi S.

1990-01-01

The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

NASA Astrophysics Data System (ADS)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

Retrieving fear memories, as time goes by…

PubMed Central

Do Monte, Fabricio H.; Quirk, Gregory J.; Li, Bo; Penzo, Mario A.

2016-01-01

Fear conditioning researches have led to a comprehensive picture of the neuronal circuit underlying the formation of fear memories. In contrast, knowledge about the retrieval of fear memories is much more limited. This disparity may stem from the fact that fear memories are not rigid, but reorganize over time. To bring clarity and raise awareness on the time-dependent dynamics of retrieval circuits, we review current evidence on the neuronal circuitry participating in fear memory retrieval at both early and late time points after conditioning. We focus on the temporal recruitment of the paraventricular nucleus of the thalamus, and its BDNFergic efferents to the central nucleus of the amygdala, for the retrieval and maintenance of fear memories. Finally, we speculate as to why retrieval circuits change across time, and the functional benefits of recruiting structures such as the paraventricular nucleus into the retrieval circuit. PMID:27217148

AC and DC electrical behavior of MWCNT/epoxy nanocomposite near percolation threshold: Equivalent circuits and percolation limits

NASA Astrophysics Data System (ADS)

Alizadeh Sahraei, Abolfazl; Ayati, Moosa; Baniassadi, Majid; Rodrigue, Denis; Baghani, Mostafa; Abdi, Yaser

2018-03-01

This study attempts to comprehensively investigate the effects of multi-walled carbon nanotubes (MWCNTs) on the AC and DC electrical conductivity of epoxy nanocomposites. The samples (0.2, 0.3, and 0.5 wt. % MWCNT) were produced using a combination of ultrason and shear mixing methods. DC measurements were performed by continuous measurement of the current-voltage response and the results were analyzed via a numerical percolation approach, while for the AC behavior, the frequency response was studied by analyzing phase difference and impedance in the 10 Hz to 0.2 MHz frequency range. The results showed that the dielectric parameters, including relative permittivity, impedance phase, and magnitude, present completely different behaviors for the frequency range and MWCNT weight fractions studied. To better understand the nanocomposites electrical behavior, equivalent electric circuits were also built for both DC and AC modes. The DC equivalent networks were developed based on the current-voltage curves, while the AC equivalent circuits were proposed by using an optimization problem according to the impedance magnitude and phase at different frequencies. The obtained equivalent electrical circuits were found to be highly useful tools to understand the physical mechanisms involved in MWCNT filled polymer nanocomposites.

On-chip continuous-variable quantum entanglement

NASA Astrophysics Data System (ADS)

Masada, Genta; Furusawa, Akira

2016-09-01

Entanglement is an essential feature of quantum theory and the core of the majority of quantum information science and technologies. Quantum computing is one of the most important fruits of quantum entanglement and requires not only a bipartite entangled state but also more complicated multipartite entanglement. In previous experimental works to demonstrate various entanglement-based quantum information processing, light has been extensively used. Experiments utilizing such a complicated state need highly complex optical circuits to propagate optical beams and a high level of spatial interference between different light beams to generate quantum entanglement or to efficiently perform balanced homodyne measurement. Current experiments have been performed in conventional free-space optics with large numbers of optical components and a relatively large-sized optical setup. Therefore, they are limited in stability and scalability. Integrated photonics offer new tools and additional capabilities for manipulating light in quantum information technology. Owing to integrated waveguide circuits, it is possible to stabilize and miniaturize complex optical circuits and achieve high interference of light beams. The integrated circuits have been firstly developed for discrete-variable systems and then applied to continuous-variable systems. In this article, we review the currently developed scheme for generation and verification of continuous-variable quantum entanglement such as Einstein-Podolsky-Rosen beams using a photonic chip where waveguide circuits are integrated. This includes balanced homodyne measurement of a squeezed state of light. As a simple example, we also review an experiment for generating discrete-variable quantum entanglement using integrated waveguide circuits.

Magnetically Controlled Variable Transformer

NASA Technical Reports Server (NTRS)

Kleiner, Charles T.

1994-01-01

Improved variable-transformer circuit, output voltage and current of which controlled by use of relatively small current supplied at relatively low power to control windings on its magnetic cores. Transformer circuits of this type called "magnetic amplifiers" because ratio between controlled output power and power driving control current of such circuit large. This ratio - power gain - can be as large as 100 in present circuit. Variable-transformer circuit offers advantages of efficiency, safety, and controllability over some prior variable-transformer circuits.

49 CFR 234.213 - Grounds.

Code of Federal Regulations, 2014 CFR

2014-10-01

...: circuits that include track rail; alternating current power distribution circuits that are grounded in the...) Circuits that include track rail; (2) Alternating current power distribution circuits that are grounded in...

Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Vazquez, Juan M.; Berru, Robert I.

1993-01-01

Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

Control model design to limit DC-link voltage during grid fault in a dfig variable speed wind turbine

NASA Astrophysics Data System (ADS)

Nwosu, Cajethan M.; Ogbuka, Cosmas U.; Oti, Stephen E.

2017-08-01

This paper presents a control model design capable of inhibiting the phenomenal rise in the DC-link voltage during grid- fault condition in a variable speed wind turbine. Against the use of power circuit protection strategies with inherent limitations in fault ride-through capability, a control circuit algorithm capable of limiting the DC-link voltage rise which in turn bears dynamics that has direct influence on the characteristics of the rotor voltage especially during grid faults is here proposed. The model results so obtained compare favorably with the simulation results as obtained in a MATLAB/SIMULINK environment. The generated model may therefore be used to predict near accurately the nature of DC-link voltage variations during fault given some factors which include speed and speed mode of operation, the value of damping resistor relative to half the product of inner loop current control bandwidth and the filter inductance.

Current limiting remote power control module

NASA Technical Reports Server (NTRS)

Hopkins, Douglas C.

1990-01-01

The power source for the Space Station Freedom will be fully utilized nearly all of the time. As such, any loads on the system will need to operate within expected limits. Should any load draw an inordinate amount of power, the bus voltage for the system may sag and disrupt the operation of other loads. To protect the bus and loads some type of power interface between the bus and each load must be provided. This interface is most crucial when load faults occur. A possible system configuration is presented. The proposed interface is the Current Limiting Remote Power Controller (CL-RPC). Such an interface should provide the following power functions: limit overloading and resulting undervoltage; prevent catastrophic failure and still provide for redundancy management within the load; minimize cable heating; and provide accurate current measurement. A functional block diagram of the power processing stage of a CL-RPC is included. There are four functions that drive the circuit design: rate control of current; current sensing; the variable conductance switch (VCS) technology; and the algorithm used for current limiting. Each function is discussed separately.

Resistive-Type Fault Current Limiter

NASA Astrophysics Data System (ADS)

Martini, L.; Bocchi, M.; Angeli, G.

Among the wide range of High-Temperature Superconducting (HTS) materials presently known Bismuth Strontium Calcium Copper Oxide (BSCCO) is a very suitable candidate for power applications either at low temperature (e.g. <30K) at any field or at high temperature (e.g. 77K) in self-field conditions. This is due to several advantages of BSCCO from an electrical, thermal, mechanical and economic point of view. In particular, BSCCO has been proven to be particularly suitable for hybrid current leads and HTS cables. However, BSCCO-based Superconducting Fault Current Limiter (SFCL) applications have been an important issue within the Ricerca sul Sistema Energetico (RSE) S.p.A. R&D portfolio in the last decade. The SFCL project, funded in the framework of a R&D national project, started focusing on a preliminary single-phase device, which was submitted to dielectric and short-circuit current testing. The first success paved the way for the finalization of the remaining two phases and the final result was a three-phase resistive-type 9 kV/3.4 MVA SFCL device, based on first generation (1G) BSCCO tapes that was installed in the S. Dionigi substation, belonging to the Italian utility A2A Reti Elettriche S.p.A. (A2A), in the Milan MV distribution grid. The in-field activity lasted for more than two years, demonstrating the SFCL capability to cope with the grid in every-day operating conditions. Moreover, at the end of the experimentation, the SFCL device was able to perform a true limitation during a three-phase fault, thereby becoming one of the first SFCL devices in the world (the first in Italy) installed in a real grid and to have limited a real short-circuit current.

Video Surveillance: All Eyes Turn to IP

ERIC Educational Resources Information Center

Raths, David

2011-01-01

Many university officials recognize the need to upgrade their older analog video surveillance systems. In a 2010 survey by "Campus Safety" magazine, half of university respondents expressed dissatisfaction with the quality and coverage of their current video surveillance systems. Among the limitations of analog closed-circuit television…

A double-stage start-up structure to limit the inrush current used in current mode charge pump

NASA Astrophysics Data System (ADS)

Cong, Liu; Xinquan, Lai; Hanxiao, Du; Yuan, Chi

2016-06-01

A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range, fixed output and multimode operation is presented in this paper. As a widely utilized power source implement, a Li-battery is always used as the power supply for chips. Due to the internal resistance, a potential drop will be generated at the input terminal of the chip with an input current. A false shut down with a low supply voltage will happen if the input current is too large, leading to the degradation of the Li-battery's service life. To solve this problem, the inrush current is limited by introducing a new start-up state. All of the circuits have been implemented with the NUVOTON 0.6 μm CMOS process. The measurement results show that the inrush current can be limited below 1 A within all input supply ranges, and the power efficiency is higher than the conventional structure. Project supported by the National Natural Science Foundation of China (No. 61106026).

Short-circuit current and ionic fluxes in the isolated colonic mucosa of Bufo arenarum.

PubMed

Lew, V L

1970-03-01

1. The unidirectional fluxes of (22)Na, (36)Cl and [(14)C]bicarbonate ions were measured in paired portions of the isolated and short-circuited colonic mucosa of Bufo arenarum, separated from its muscular layer. Pharmacological effects as well as effects of changes in the composition of the nutrient solutions on the electrical parameters of membrane activity (potential difference, short-circuit current and total membrane resistance) are described.2. The net fluxes of both Cl and bicarbonate ions were not significantly different from zero in the absence of electrochemical gradients across the membrane.3. The net Na flux from mucosa to serosa represented a variable proportion of the short-circuit current ranging from 62 to 100%.4. The proportion of membranes with high discrepancies between net Na flux and short-circuit current decreased with the duration of captivity of the toads.5. When Na was entirely replaced by choline in the mucosal bathing solution, the short-circuit current dropped by a variable amount within the range of 64 to 98% of its control values in different membranes. This effect was completely reversible. Similar changes in the serosal solution had no effect.6. The short-circuit current and potential difference were very sensitive to the serosal concentration of bicarbonate ions. In different membranes, 60-100% of the short-circuit current was reversibly abolished by bathing the serosal surface with a bicarbonate-free solution. The mucosal bicarbonate level had no effect on either the potential difference or the short-circuit current. 5 mM bicarbonate in the serosal solution restored at least 50% of the short-circuit control value and full recovery was attained by concentrations near 30 mM bicarbonate.7. Anoxia brought the potential difference and short-circuit current reversibly down to zero in about 50 min.8. Ouabain reduced the short-circuit current up to 80% in about 40 min when present in the serosal solution at a concentration of 10(-4)M. At this or lower concentrations the ouabain effect was reversible. Above this level ouabain produced 100% inhibition in 3-4 hr, but this was no longer reversible. Ouabain had no effect on the short-circuit current either when applied to the mucosal surface or in the absence of Na from the mucosal solution.9. Diamox produced a variable inhibition of the short-circuit current of up to 30% only at concentrations above 10 mM.10. Possible mechanisms are discussed for the appearance of the non-Na component of the short-circuit current. A theory concerning its nature is proposed.

Focal plane infrared readout circuit with automatic background suppression

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Sun, Chao (Inventor); Shaw, Timothy J. (Inventor); Wrigley, Chris J. (Inventor)

2002-01-01

A circuit for reading out a signal from an infrared detector includes a current-mode background-signal subtracting circuit having a current memory which can be enabled to sample and store a dark level signal from the infrared detector during a calibration phase. The signal stored by the current memory is subtracted from a signal received from the infrared detector during an imaging phase. The circuit also includes a buffered direct injection input circuit and a differential voltage readout section. By performing most of the background signal estimation and subtraction in a current mode, a low gain can be provided by the buffered direct injection input circuit to keep the gain of the background signal relatively small, while a higher gain is provided by the differential voltage readout circuit. An array of such readout circuits can be used in an imager having an array of infrared detectors. The readout circuits can provide a high effective handling capacity.

Development and testing of a 180-volt dc electronic circuit breaker with a 335-ampere carry and 1200-ampere interrupt rating

NASA Technical Reports Server (NTRS)

Brush, A. S.; Phillips, R. L.

1991-01-01

NASA Lewis Research Center and associated contractors have conducted a program to assess the potential requirements for a high-current switch to conceptually design a switch using the best existing technology, and to build and demonstrate a breadboard which meets the requirements. The result is the high current remote bus isolator (HRBI). The HRBI is rated at 180 V dc, 335 A continuous with a 1200 A interrupt rating. It also incorporates remote-control and protective features called for by the Space Station Freedom PMAD dc test bed design. Two breadboard 335 A circuit breakers were built and tested that demonstrate a promising concept of paralleled current-limiting modules. The units incorporated all control and protective features required by advanced aerospace power systems. Component stresses in each unit were determined by design, and are consistent with a life of many thousands of fault operations.

A novel concept of fault current limiter based on saturable core in high voltage DC transmission system

NASA Astrophysics Data System (ADS)

Yuan, Jiaxin; Zhou, Hang; Gan, Pengcheng; Zhong, Yongheng; Gao, Yanhui; Muramatsu, Kazuhiro; Du, Zhiye; Chen, Baichao

2018-05-01

To develop mechanical circuit breaker in high voltage direct current (HVDC) system, a fault current limiter is required. Traditional method to limit DC fault current is to use superconducting technology or power electronic devices, which is quite difficult to be brought to practical use under high voltage circumstances. In this paper, a novel concept of high voltage DC transmission system fault current limiter (DCSFCL) based on saturable core was proposed. In the DCSFCL, the permanent magnets (PM) are added on both up and down side of the core to generate reverse magnetic flux that offset the magnetic flux generated by DC current and make the DC winding present a variable inductance to the DC system. In normal state, DCSFCL works as a smoothing reactor and its inductance is within the scope of the design requirements. When a fault occurs, the inductance of DCSFCL rises immediately and limits the steepness of the fault current. Magnetic field simulations were carried out, showing that compared with conventional smoothing reactor, DCSFCL can decrease the high steepness of DC fault current by 17% in less than 10ms, which verifies the feasibility and effectiveness of this method.

Indirectly sensing accelerator beam currents for limiting maximum beam current magnitude

DOEpatents

Bogaty, J.M.; Clifft, B.E.; Bollinger, L.M.

1995-08-08

A beam current limiter is disclosed for sensing and limiting the beam current in a particle accelerator, such as a cyclotron or linear accelerator, used in scientific research and medical treatment. A pair of independently operable capacitive electrodes sense the passage of charged particle bunches to develop an RF signal indicative of the beam current magnitude produced at the output of a bunched beam accelerator. The RF signal produced by each sensing electrode is converted to a variable DC voltage indicative of the beam current magnitude. The variable DC voltages thus developed are compared to each other to verify proper system function and are further compared to known references to detect beam currents in excess of pre-established limits. In the event of a system malfunction, or if the detected beam current exceeds pre-established limits, the beam current limiter automatically inhibits further accelerator operation. A high Q tank circuit associated with each sensing electrode provides a narrow system bandwidth to reduce noise and enhance dynamic range. System linearity is provided by injecting, into each sensing electrode, an RF signal that is offset from the bunching frequency by a pre-determined beat frequency to ensure that subsequent rectifying diodes operate in a linear response region. The system thus provides a large dynamic range in combination with good linearity. 6 figs.

Indirectly sensing accelerator beam currents for limiting maximum beam current magnitude

DOEpatents

Bogaty, John M.; Clifft, Benny E.; Bollinger, Lowell M.

1995-01-01

A beam current limiter for sensing and limiting the beam current in a particle accelerator, such as a cyclotron or linear accelerator, used in scientific research and medical treatment. A pair of independently operable capacitive electrodes sense the passage of charged particle bunches to develop an RF signal indicative of the beam current magnitude produced at the output of a bunched beam accelerator. The RF signal produced by each sensing electrode is converted to a variable DC voltage indicative of the beam current magnitude. The variable DC voltages thus developed are compared to each other to verify proper system function and are further compared to known references to detect beam currents in excess of pre-established limits. In the event of a system malfunction, or if the detected beam current exceeds pre-established limits, the beam current limiter automatically inhibits further accelerator operation. A high Q tank circuit associated with each sensing electrode provides a narrow system bandwidth to reduce noise and enhance dynamic range. System linearity is provided by injecting, into each sensing electrode, an RF signal that is offset from the bunching frequency by a pre-determined beat frequency to ensure that subsequent rectifying diodes operate in a linear response region. The system thus provides a large dynamic range in combination with good linearity.

Applications of the superconducting lossless resistor in electric power systems

NASA Astrophysics Data System (ADS)

Qian, Ping; Chen, Ji-yan; Hua, Rong; Chen, Zhongming

2003-04-01

The main features and some very useful applications of the superconducting lossless resistor (LLR) in electric power systems are introduced in this paper. According our opinion, there are two different kinds of LLR, i.e., the time-variant LLR (Tv-LLR) and the time-invariant LLR (Ti-LLR). First, Tv-LLR is well suited for developing new type of the fault-current limiter (FCL) since it has no heat energy dissipated from its superconducting element during current-limiting process. Second, it may be used to produce the high voltage circuit breaker with current limiting ability. While Ti-LLR may be used to manufacture a new type of the superconducting transformer, with compact volume, lightweight and with continuously regulated turn-ratio (so it familiarized as time-variable transformer, TVT).

Overload protection system for power inverter

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1977-01-01

An overload protection system for a power inverter utilized a first circuit for monitoring current to the load from the power inverter to detect an overload and a control circuit to shut off the power inverter, when an overload condition was detected. At the same time, a monitoring current inverter was turned on to deliver current to the load at a very low power level. A second circuit monitored current to the load, from the monitoring current inverter, to hold the power inverter off through the control circuit, until the overload condition was cleared so that the control circuit may be deactivated in order for the power inverter to be restored after the monitoring current inverter is turned off completely.

30 CFR 18.51 - Electrical protection of circuits and equipment.

Code of Federal Regulations, 2011 CFR

2011-07-01

... the junction with the main circuit when the branch-circuit conductor(s) has a current carrying... same duty. (1) If the overcurrent-protective device in a direct-current circuit does not open both... preventing the possibility of reversing connections which would result in changing the circuit interrupter to...

30 CFR 18.51 - Electrical protection of circuits and equipment.

Code of Federal Regulations, 2010 CFR

2010-07-01

... the junction with the main circuit when the branch-circuit conductor(s) has a current carrying... same duty. (1) If the overcurrent-protective device in a direct-current circuit does not open both... preventing the possibility of reversing connections which would result in changing the circuit interrupter to...

Device, system and method for a sensing electrical circuit

NASA Technical Reports Server (NTRS)

Vranish, John M. (Inventor)

2009-01-01

The invention relates to a driven ground electrical circuit. A driven ground is a current-measuring ground termination to an electrical circuit with the current measured as a vector with amplification. The driven ground module may include an electric potential source V.sub.S driving an electric current through an impedance (load Z) to a driven ground. Voltage from the source V.sub.S excites the minus terminal of an operational amplifier inside the driven ground which, in turn, may react by generating an equal and opposite voltage to drive the net potential to approximately zero (effectively ground). A driven ground may also be a means of passing information via the current passing through one grounded circuit to another electronic circuit as input. It may ground one circuit, amplify the information carried in its current and pass this information on as input to the next circuit.

Efficient Radio Frequency Inductive Discharges in Near Atmospheric Pressure Using Immittance Conversion Topology

NASA Astrophysics Data System (ADS)

Razzak, M. Abdur; Takamura, Shuichi; Uesugi, Yoshihiko; Ohno, Noriyasu

A radio frequency (rf) inductive discharge in atmospheric pressure range requires high voltage in the initial startup phase and high power during the steady state sustainment phase. It is, therefore, necessary to inject high rf power into the plasma ensuring the maximum use of the power source, especially where the rf power is limited. In order to inject the maximum possible rf power into the plasma with a moderate rf power source of few kilowatts range, we employ the immittance conversion topology by converting a constant voltage source into a constant current source to generate efficient rf discharge by inductively coupled plasma (ICP) technique at a gas pressure with up to one atmosphere in argon. A novel T-LCL immittance circuit is designed for constant-current high-power operation, which is practically very important in the high-frequency range, to provide high effective rf power to the plasma. The immittance conversion system combines the static induction transistor (SIT)-based radio frequency (rf) high-power inverter circuit and the immittance conversion elements including the rf induction coil. The basic properties of the immittance circuit are studied by numerical analysis and verified the results by experimental measurements with the inductive plasma as a load at a relatively high rf power of about 4 kW. The performances of the immittance circuit are also evaluated and compared with that of the conventional series resonance circuit in high-pressure induction plasma generation. The experimental results reveal that the immittance conversion circuit confirms injecting higher effective rf power into the plasma as much as three times than that of the series resonance circuit under the same operating conditions and same dc supply voltage to the inverter, thereby enhancing the plasma heating efficiency to generate efficient rf inductive discharges.

Design of analog pixels front-end active feedback

NASA Astrophysics Data System (ADS)

Kmon, P.; Kadlubowski, L. A.; Kaczmarczyk, P.

2018-01-01

The paper presents the design of the active feedback used in a charge-sensitive amplifier. The predominant advantages of the presented circuit are its ability for setting wide range of pulse-time widths, small silicon area occupation and low power consumption. The feedback also allows sensor leakage current compensation and, thanks to an additional DC amplifier, it minimizes the output DC voltage variations, which is especially important in the DC coupled recording chain and for processes with limited supply voltage. The paper provides feedback description and its operation principle. The proposed circuit was designed in the CMOS 130nm technology.

Demonstration of a 4H SiC betavoltaic cell

NASA Astrophysics Data System (ADS)

Chandrashekhar, M. V. S.; Thomas, Christopher I.; Li, Hui; Spencer, M. G.; Lal, Amit

2006-01-01

A betavoltaic cell in 4H SiC is demonstrated. A p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.72V and a short circuit current density of 16.8nA /cm2 were measured in a single p-n junction. A 6% lower bound on the power conversion efficiency was obtained. A simple photovoltaic-type model was used to explain the results. Fill factor and backscattering effects were included in the efficiency calculation. The performance of the device was limited by edge recombination.

Driver circuit for solid state light sources

DOEpatents

Palmer, Fred; Denvir, Kerry; Allen, Steven

2016-02-16

A driver circuit for a light source including one or more solid state light sources, a luminaire including the same, and a method of so driving the solid state light sources are provided. The driver circuit includes a rectifier circuit that receives an alternating current (AC) input voltage and provides a rectified AC voltage. The driver circuit also includes a switching converter circuit coupled to the light source. The switching converter circuit provides a direct current (DC) output to the light source in response to the rectified AC voltage. The driver circuit also includes a mixing circuit, coupled to the light source, to switch current through at least one solid state light source of the light source in response to each of a plurality of consecutive half-waves of the rectified AC voltage.

Short-circuit current and ionic fluxes in the isolated colonic mucosa of Bufo arenarum

PubMed Central

Lew, V. L.

1970-01-01

1. The unidirectional fluxes of 22Na, 36Cl and [14C]bicarbonate ions were measured in paired portions of the isolated and short-circuited colonic mucosa of Bufo arenarum, separated from its muscular layer. Pharmacological effects as well as effects of changes in the composition of the nutrient solutions on the electrical parameters of membrane activity (potential difference, short-circuit current and total membrane resistance) are described. 2. The net fluxes of both Cl and bicarbonate ions were not significantly different from zero in the absence of electrochemical gradients across the membrane. 3. The net Na flux from mucosa to serosa represented a variable proportion of the short-circuit current ranging from 62 to 100%. 4. The proportion of membranes with high discrepancies between net Na flux and short-circuit current decreased with the duration of captivity of the toads. 5. When Na was entirely replaced by choline in the mucosal bathing solution, the short-circuit current dropped by a variable amount within the range of 64 to 98% of its control values in different membranes. This effect was completely reversible. Similar changes in the serosal solution had no effect. 6. The short-circuit current and potential difference were very sensitive to the serosal concentration of bicarbonate ions. In different membranes, 60-100% of the short-circuit current was reversibly abolished by bathing the serosal surface with a bicarbonate-free solution. The mucosal bicarbonate level had no effect on either the potential difference or the short-circuit current. 5 mM bicarbonate in the serosal solution restored at least 50% of the short-circuit control value and full recovery was attained by concentrations near 30 mM bicarbonate. 7. Anoxia brought the potential difference and short-circuit current reversibly down to zero in about 50 min. 8. Ouabain reduced the short-circuit current up to 80% in about 40 min when present in the serosal solution at a concentration of 10-4 M. At this or lower concentrations the ouabain effect was reversible. Above this level ouabain produced 100% inhibition in 3-4 hr, but this was no longer reversible. Ouabain had no effect on the short-circuit current either when applied to the mucosal surface or in the absence of Na from the mucosal solution. 9. Diamox produced a variable inhibition of the short-circuit current of up to 30% only at concentrations above 10 mM. 10. Possible mechanisms are discussed for the appearance of the non-Na component of the short-circuit current. A theory concerning its nature is proposed. PMID:5498503

30 CFR 75.900-3 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

... current circuits serving three-phase alternating current equipment and their auxiliary devices shall be... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900-3 Testing, examination, and...

30 CFR 75.900-3 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2011 CFR

2011-07-01

... current circuits serving three-phase alternating current equipment and their auxiliary devices shall be... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900-3 Testing, examination, and...

Practical applications of current loop signal conditioning

NASA Astrophysics Data System (ADS)

Anderson, Karl F.

1994-10-01

This paper describes a variety of practical application circuits based on the current loop signal conditioning paradigm. Equations defining the circuit response are also provided. The constant current loop is a fundamental signal conditioning circuit concept that can be implemented in a variety of configurations for resistance-based transducers, such as strain gages and resistance temperature devices. The circuit features signal conditioning outputs which are unaffected by extremely large variations in lead wire resistance, direct current frequency response, and inherent linearity with respect to resistance change. Sensitivity of this circuit is double that of a Wheatstone bridge circuit. Electrical output is zero for resistance change equals zero. The same excitation and output sense wires can serve multiple transducers. More application arrangements are possible with constant current loop signal conditioning than with the Wheatstone bridge.

Current loop signal conditioning: Practical applications

NASA Technical Reports Server (NTRS)

Anderson, Karl F.

1995-01-01

This paper describes a variety of practical application circuits based on the current loop signal conditioning paradigm. Equations defining the circuit response are also provided. The constant current loop is a fundamental signal conditioning circuit concept that can be implemented in a variety of configurations for resistance-based transducers, such as strain gages and resistance temperature detectors. The circuit features signal conditioning outputs which are unaffected by extremely large variations in lead wire resistance, direct current frequency response, and inherent linearity with respect to resistance change. Sensitivity of this circuit is double that of a Wheatstone bridge circuit. Electrical output is zero for resistance change equals zero. The same excitation and output sense wires can serve multiple transducers. More application arrangements are possible with constant current loop signal conditioning than with the Wheatstone bridge.

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat Duen

2005-01-01

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Hybrid circuit achieves pulse regeneration with low power drain

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Hybrid tunnel diode-transistor circuit provides a solid-state, low power drain pulse regenerator, frequency limiter, or gated oscillator. When the feedback voltage exceeds the input voltage, the circuit functions as a pulse normalizer or a frequency limiter. If the circuit is direct coupled, it functions as a gated oscillator.

Improved Signal Chains for Readout of CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

2009-01-01

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

A 1.1nW Energy Harvesting System with 544pW Quiescent Power for Next Generation Implants

PubMed Central

Mercier, Patrick P.; Lysaght, Andrew C.; Stankovic, Konstantina M.; Chandrakasan, Anantha P.

2015-01-01

This paper presents a nW power management unit (PMU) for an autonomous wireless sensor that sustains itself by harvesting energy from the endocochlear potential (EP), the 70–100 mV electrochemical bio-potential inside the mammalian ear. Due to the anatomical constraints inside the inner ear, the total extractable power from the EP is limited to 1.1–6.25 nW. A nW boost converter is used to increase the input voltage (30–55 mV) to a higher voltage (0.8 to 1.1 V) usable by CMOS circuits in the sensor. A pW Charge Pump circuit is used to minimize the leakage in the boost converter. Further, ultra-low-power control circuits consisting of digital implementations of input impedance adjustment circuits and Zero Current Switching circuits along with Timer and Reference circuits keep the quiescent power of the PMU down to 544 pW. The designed boost converter achieves a peak power conversion efficiency of 56%. The PMU can sustain itself and a duty-cyled ultra-low power load while extracting power from the EP of a live guinea pig. The PMU circuits have been implemented on a 0.18µm CMOS process. PMID:25983340

Variability of multilevel switching in scaled hybrid RS/CMOS nanoelectronic circuits: theory

NASA Astrophysics Data System (ADS)

Heittmann, Arne; Noll, Tobias G.

2013-07-01

A theory is presented which describes the variability of multilevel switching in scaled hybrid resistive-switching/CMOS nanoelectronic circuits. Variability is quantified in terms of conductance variation using the first two moments derived from the probability density function (PDF) of the RS conductance. For RS, which are based on the electrochemical metallization effect (ECM), this variability is - to some extent - caused by discrete events such as electrochemical reactions, which occur on atomic scale and are at random. The theory shows that the conductance variation depends on the joint interaction between the programming circuit and the resistive switch (RS), and explicitly quantifies the impact of RS device parameters and parameters of the programming circuit on the conductance variance. Using a current mirror as an exemplary programming circuit an upper limit of 2-4 bits (dependent on the filament surface area) is estimated as the storage capacity exploiting the multilevel capabilities of an ECM cell. The theoretical results were verified by Monte Carlo circuit simulations on a standard circuit simulation environment using an ECM device model which models the filament growth by a Poisson process. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

A 1.1nW Energy Harvesting System with 544pW Quiescent Power for Next Generation Implants.

PubMed

Bandyopadhyay, Saurav; Mercier, Patrick P; Lysaght, Andrew C; Stankovic, Konstantina M; Chandrakasan, Anantha P

2014-12-01

This paper presents a nW power management unit (PMU) for an autonomous wireless sensor that sustains itself by harvesting energy from the endocochlear potential (EP), the 70-100 mV electrochemical bio-potential inside the mammalian ear. Due to the anatomical constraints inside the inner ear, the total extractable power from the EP is limited to 1.1-6.25 nW. A nW boost converter is used to increase the input voltage (30-55 mV) to a higher voltage (0.8 to 1.1 V) usable by CMOS circuits in the sensor. A pW Charge Pump circuit is used to minimize the leakage in the boost converter. Further, ultra-low-power control circuits consisting of digital implementations of input impedance adjustment circuits and Zero Current Switching circuits along with Timer and Reference circuits keep the quiescent power of the PMU down to 544 pW. The designed boost converter achieves a peak power conversion efficiency of 56%. The PMU can sustain itself and a duty-cyled ultra-low power load while extracting power from the EP of a live guinea pig. The PMU circuits have been implemented on a 0.18µm CMOS process.

Automatic recloser circuit breaker integrated with GSM technology for power system notification

NASA Astrophysics Data System (ADS)

Lada, M. Y.; Khiar, M. S. A.; Ghani, S. A.; Nawawi, M. R. M.; Rahim, N. H.; Sinar, L. O. M.

2015-05-01

Lightning is one type of transient faults that usually cause the circuit breaker in the distribution board trip due to overload current detection. The instant tripping condition in the circuit breakers clears the fault in the system. Unfortunately most circuit breakers system is manually operated. The power line will be effectively re-energized after the clearing fault process is finished. Auto-reclose circuit is used on the transmission line to carry out the duty of supplying quality electrical power to customers. In this project, an automatic reclose circuit breaker for low voltage usage is designed. The product description is the Auto Reclose Circuit Breaker (ARCB) will trip if the current sensor detects high current which exceeds the rated current for the miniature circuit breaker (MCB) used. Then the fault condition will be cleared automatically and return the power line to normal condition. The Global System for Mobile Communication (GSM) system will send SMS to the person in charge if the tripping occurs. If the over current occurs in three times, the system will fully trip (open circuit) and at the same time will send an SMS to the person in charge. In this project a 1 A is set as the rated current and any current exceeding a 1 A will cause the system to trip or interrupted. This system also provides an additional notification for user such as the emergency light and warning system.

Laser system for testing radiation imaging detector circuits

NASA Astrophysics Data System (ADS)

Zubrzycka, Weronika; Kasinski, Krzysztof

2015-09-01

Performance and functionality of radiation imaging detector circuits in charge and position measurement systems need to meet tight requirements. It is therefore necessary to thoroughly test sensors as well as read-out electronics. The major disadvantages of using radioactive sources or particle beams for testing are high financial expenses and limited accessibility. As an alternative short pulses of well-focused laser beam are often used for preliminary tests. There are number of laser-based devices available on the market, but very often their applicability in this field is limited. This paper describes concept, design and validation of laser system for testing silicon sensor based radiation imaging detector circuits. The emphasis is put on keeping overall costs low while achieving all required goals: mobility, flexible parameters, remote control and possibility of carrying out automated tests. The main part of the developed device is an optical pick-up unit (OPU) used in optical disc drives. The hardware includes FPGA-controlled circuits for laser positioning in 2 dimensions (horizontal and vertical), precision timing (frequency and number) and amplitude (diode current) of short ns-scale (3.2 ns) light pulses. The system is controlled via USB interface by a dedicated LabVIEW-based application enabling full manual or semi-automated test procedures.

Serial and parallel power equipment with high-temperature superconducting elements

NASA Technical Reports Server (NTRS)

Bencze, Laszlo; Goebl, Nandor; Palotas, Bela; Vajda, Istvan

1995-01-01

One of the prospective, practical applications of high-temperature superconductors is the fault-current limitation in electrical energy networks. The development and testing of experimental HTSC serial current limiters have been reported in the literature. A Hungarian electric power company has proposed the development of a parallel equipment for arc suppressing both in the industrial and customers' networks. On the basis of the company's proposal the authors have outlined the scheme of a compound circuit that can be applied both for current limitation and arc suppressing. In this paper the design principles and methods of the shunt equipment are presented. These principles involve the electrical, mechanical and cryogenic aspects with the special view on the electrical and mechanical connection between the HTSC material and the current lead. Preliminary experiments and tests have been carried out to demonstrate the validity of the design principles developed. The results of the experiments and of the technological investigations are presented.

Experiment study on an inductive superconducting fault current limiter using no-insulation coils

NASA Astrophysics Data System (ADS)

Qiu, D.; Li, Z. Y.; Gu, F.; Huang, Z.; Zhao, A.; Hu, D.; Wei, B. G.; Huang, H.; Hong, Z.; Ryu, K.; Jin, Z.

2018-03-01

No-insulation (NI) coil made of 2 G high temperature superconducting (HTS) tapes has been widely used in DC magnet due to its excellent performance of engineering current density, thermal stability and mechanical strength. However, there are few AC power device using NI coil at present. In this paper, the NI coil is firstly applied into inductive superconducting fault current limiter (iSFCL). A two-winding structure air-core iSFCL prototype was fabricated, composed of a primary copper winding and a secondary no-insulation winding using 2 G HTS coated conductors. Firstly, in order to testify the feasibility to use NI coil as the secondary winding, the impedance variation of the prototype at different currents and different cycles was tested. The result shows that the impedance increases rapidly with the current rises. Then the iSFCL prototype was tested in a 40 V rms/ 3.3 kA peak short circuit experiment platform, both of the fault current limiting and recovery property of the iSFCL are discussed.

The Safety of Aircraft Exposed to Electromagnetic Fields: HIRF Testing of Aircraft Using Direct Current Injection

DTIC Science & Technology

2007-06-01

massive RF power to the antenna feed points without providing an inductive path to earth. Given all the above challenges, and especially the... circuit theory currents are flowing limited by the three parallel 50 ohm resistances and low inductive reactance. This plateaus at eigencurrent...relative to nett TEM cell input power has been calculated: Figure 86 Expected power output from probe, neglecting probe inductance DSTO-RR-0329

Integrated biocircuits: engineering functional multicellular circuits and devices.

PubMed

Prox, Jordan; Smith, Tory; Holl, Chad; Chehade, Nick; Guo, Liang

2018-04-01

Implantable neurotechnologies have revolutionized neuromodulatory medicine for treating the dysfunction of diseased neural circuitry. However, challenges with biocompatibility and lack of full control over neural network communication and function limits the potential to create more stable and robust neuromodulation devices. Thus, we propose a platform technology of implantable and programmable cellular systems, namely Integrated Biocircuits, which use only cells as the functional components of the device. We envision the foundational principles for this concept begins with novel in vitro platforms used for the study and reconstruction of cellular circuitry. Additionally, recent advancements in organoid and 3D culture systems account for microenvironment factors of cytoarchitecture to construct multicellular circuits as they are normally formed in the brain. We explore the current state of the art of these platforms to provide knowledge of their advancements in circuit fabrication and identify the current biological principles that could be applied in designing integrated biocircuit devices. We have highlighted the exemplary methodologies and techniques of in vitro circuit fabrication and propose the integration of selected controllable parameters, which would be required in creating suitable biodevices. We provide our perspective and propose new insights into the future of neuromodulaion devices within the scope of living cellular systems that can be applied in designing more reliable and biocompatible stimulation-based neuroprosthetics.

Integrated biocircuits: engineering functional multicellular circuits and devices

NASA Astrophysics Data System (ADS)

Prox, Jordan; Smith, Tory; Holl, Chad; Chehade, Nick; Guo, Liang

2018-04-01

Objective. Implantable neurotechnologies have revolutionized neuromodulatory medicine for treating the dysfunction of diseased neural circuitry. However, challenges with biocompatibility and lack of full control over neural network communication and function limits the potential to create more stable and robust neuromodulation devices. Thus, we propose a platform technology of implantable and programmable cellular systems, namely Integrated Biocircuits, which use only cells as the functional components of the device. Approach. We envision the foundational principles for this concept begins with novel in vitro platforms used for the study and reconstruction of cellular circuitry. Additionally, recent advancements in organoid and 3D culture systems account for microenvironment factors of cytoarchitecture to construct multicellular circuits as they are normally formed in the brain. We explore the current state of the art of these platforms to provide knowledge of their advancements in circuit fabrication and identify the current biological principles that could be applied in designing integrated biocircuit devices. Main results. We have highlighted the exemplary methodologies and techniques of in vitro circuit fabrication and propose the integration of selected controllable parameters, which would be required in creating suitable biodevices. Significance. We provide our perspective and propose new insights into the future of neuromodulaion devices within the scope of living cellular systems that can be applied in designing more reliable and biocompatible stimulation-based neuroprosthetics.

Differential biofilms characteristics of Shewanella decolorationis microbial fuel cells under open and closed circuit conditions.

PubMed

Yang, Yonggang; Sun, Guoping; Guo, Jun; Xu, Meiying

2011-07-01

Biofilms formation capacities of Shewanella species in microbial fuel cells (MFCs) and their roles in current generation have been documented to be species-dependent. Understandings of the biofilms growth and metabolism are essential to optimize the current generation of MFCs. Shewanella decolorationis S12 was used in both closed-circuit and open-circuit MFCs in this study. The anodic S. decolorationis S12 biofilms could generate fivefold more current than the planktonic cells, playing a dominant role in current generation. Anodic biofilms viability was sustained at 98 ± 1.2% in closed-circuit while biofilms viability in open-circuit decreased to 72 ± 7% within 96 h. The unviable domain in open-circuit MFCs biofilms majorly located at the inner layer of biofilm. The decreased biofilms viability in open-circuit MFCs could be recovered by switching into closed-circuit, indicating that the current-generating anode in MFCs could serve as a favorable electron acceptor and provide sufficient energy to support cell growth and metabolism inside biofilms. Copyright © 2011 Elsevier Ltd. All rights reserved.

Dual amplitude pulse generator for radiation detectors

DOEpatents

Hoggan, Jerry M.; Kynaston, Ronnie L.; Johnson, Larry O.

2001-01-01

A pulsing circuit for producing an output signal having a high amplitude pulse and a low amplitude pulse may comprise a current source for providing a high current signal and a low current signal. A gate circuit connected to the current source includes a trigger signal input that is responsive to a first trigger signal and a second trigger signal. The first trigger signal causes the gate circuit to connect the high current signal to a pulse output terminal whereas the second trigger signal causes the gate circuit to connect the low current signal to the pulse output terminal.

Comparison of chitosan and chitosan nanoparticles on the performance and charge recombination of water-based gel electrolyte in dye sensitized solar cells.

PubMed

Khalili, Malihe; Abedi, Mohammad; Amoli, Hossein Salar; Mozaffari, Seyed Ahmad

2017-11-01

In commercialization of liquid dye-sensitized solar cells (DSSCs), whose leakage, evaporation and toxicity of organic solvents are limiting factors, replacement of organic solvents with water-based gel electrolyte is recommended. This work reports on utilizing and comparison of chitosan and chitosan nanoparticle as different gelling agents in preparation of water-based gel electrolyte in fabrication of dye sensitized solar cells. All photovoltaic parameters such as open circuit voltage (V oc ), fill factor (FF), short circuit current density (J sc ) and conversion efficiency (η) were measured. For further characterization, electrochemical impedance spectroscopy (EIS) was used to study the charge transfer at Pt/electrolyte interface and charge recombination and electron transport at TiO 2 /dye/electrolyte interface. Significant improvements in conversion efficiency and short circuit current density of DSSCs fabricated by chitosan nanoparticle were observed that can be attributed to the higher mobility of I 3 - due to the lower viscosity and smaller size of chitosan nanoparticles. Copyright © 2017 Elsevier Ltd. All rights reserved.

Oxygen permeation through Nafion 117 membrane and its impact on efficiency of polymer membrane ethanol fuel cell

NASA Astrophysics Data System (ADS)

Jablonski, Andrzej; Kulesza, Pawel J.; Lewera, Adam

2011-05-01

We investigate oxygen permeation through Nafion 117 membrane in a direct ethanol fuel cell and elucidate how it affects the fuel cell efficiency. An obvious symptom of oxygen permeation is the presence of significant amounts of acetaldehyde and acetic acid in the mixture leaving anode when no current was drawn from the fuel cell (i.e. under the open circuit conditions). This parasitic process severely lowers efficiency of the fuel cell because ethanol is found to be directly oxidized on the surface of catalyst by oxygen coming through membrane from cathode in the absence of electric current flowing in the external circuit. Three commonly used carbon-supported anode catalysts are investigated, Pt, Pt/Ru and Pt/Sn. Products of ethanol oxidation are determined qualitatively and quantitatively at open circuit as a function of temperature and pressure, and we aim at determining whether the oxygen permeation or the catalyst's activity limits the parasitic ethanol oxidation. Our results strongly imply the need to develop more selective membranes that would be less oxygen permeable.

Electronic circuit for measuring series connected electrochemical cell voltages

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2000-01-01

An electronic circuit for measuring voltage signals in an energy storage device is disclosed. The electronic circuit includes a plurality of energy storage cells forming the energy storage device. A voltage divider circuit is connected to at least one of the energy storage cells. A current regulating circuit is provided for regulating the current through the voltage divider circuit. A voltage measurement node is associated with the voltage divider circuit for producing a voltage signal which is proportional to the voltage across the energy storage cell.

Method of determining the open circuit voltage of a battery in a closed circuit

DOEpatents

Brown, William E.

1980-01-01

The open circuit voltage of a battery which is connected in a closed circuit is determined without breaking the circuit or causing voltage upsets therein. The closed circuit voltage across the battery and the current flowing through it are determined under normal load and then a fractional change is made in the load and the new current and voltage values determined. The open circuit voltage is then calculated, according to known principles, from the two sets of values.

30 CFR 75.601-3 - Short circuit protection; dual element fuses; current ratings; maximum values.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Trailing Cables § 75.601-3 Short circuit protection; dual element fuses; current ratings; maximum values... circuit protection of trailing cables as provided in § 75.601, however, the current ratings of such...

Colloidal quantum dot solar cells exploiting hierarchical structuring.

PubMed

Labelle, André J; Thon, Susanna M; Masala, Silvia; Adachi, Michael M; Dong, Haopeng; Farahani, Maryam; Ip, Alexander H; Fratalocchi, Andrea; Sargent, Edward H

2015-02-11

Extremely thin-absorber solar cells offer low materials utilization and simplified manufacture but require improved means to enhance photon absorption in the active layer. Here, we report enhanced-absorption colloidal quantum dot (CQD) solar cells that feature transfer-stamped solution-processed pyramid-shaped electrodes employed in a hierarchically structured device. The pyramids increase, by up to a factor of 2, the external quantum efficiency of the device at absorption-limited wavelengths near the absorber band edge. We show that absorption enhancement can be optimized with increased pyramid angle with an appreciable net improvement in power conversion efficiency, that is, with the gain in current associated with improved absorption and extraction overcoming the smaller fractional decrease in open-circuit voltage associated with increased junction area. We show that the hierarchical combination of micron-scale structured electrodes with nanoscale films provides for an optimized enhancement at absorption-limited wavelengths. We fabricate 54.7° pyramid-patterned electrodes, conformally apply the quantum dot films, and report pyramid CQD solar cells that exhibit a 24% improvement in overall short-circuit current density with champion devices providing a power conversion efficiency of 9.2%.

Research of vibration control based on current mode piezoelectric shunt damping circuit

NASA Astrophysics Data System (ADS)

Liu, Weiwei; Mao, Qibo

2017-12-01

The piezoelectric shunt damping circuit using current mode approach is imposed to control the vibration of a cantilever beam. Firstly, the simulated inductance with large values are designed for the corresponding RL series shunt circuits. Moreover, with an example of cantilever beam, the second natural frequency of the beam is targeted to control for experiment. By adjusting the values of the equivalent inductance and equivalent resistance of the shunt circuit, the optimal damping of the shunt circuit is obtained. Meanwhile, the designed piezoelectric shunt damping circuit stability is experimental verified. Experimental results show that the proposed piezoelectric shunt damping circuit based on current mode circuit has good vibration control performance. However, the control performance will be reduced if equivalent inductance and equivalent resistance values deviate from optimal values.

Subthreshold SPICE Model Optimization

NASA Astrophysics Data System (ADS)

Lum, Gregory; Au, Henry; Neff, Joseph; Bozeman, Eric; Kamin, Nick; Shimabukuro, Randy

2011-04-01

The first step in integrated circuit design is the simulation of said design in software to verify proper functionally and design requirements. Properties of the process are provided by fabrication foundries in the form of SPICE models. These SPICE models contain the electrical data and physical properties of the basic circuit elements. A limitation of these models is that the data collected by the foundry only accurately model the saturation region. This is fine for most users, but when operating devices in the subthreshold region they are inadequate for accurate simulation results. This is why optimizing the current SPICE models to characterize the subthreshold region is so important. In order to accurately simulate this region of operation, MOSFETs of varying widths and lengths are fabricated and the electrical test data is collected. From the data collected the parameters of the model files are optimized through parameter extraction rather than curve fitting. With the completed optimized models the circuit designer is able to simulate circuit designs for the sub threshold region accurately.

Scalable, Lightweight, Integrated and Quick-to-Assemble (SLIQ) Hyperdrives for Functional Circuit Dissection.

PubMed

Liang, Li; Oline, Stefan N; Kirk, Justin C; Schmitt, Lukas Ian; Komorowski, Robert W; Remondes, Miguel; Halassa, Michael M

2017-01-01

Independently adjustable multielectrode arrays are routinely used to interrogate neuronal circuit function, enabling chronic in vivo monitoring of neuronal ensembles in freely behaving animals at a single-cell, single spike resolution. Despite the importance of this approach, its widespread use is limited by highly specialized design and fabrication methods. To address this, we have developed a Scalable, Lightweight, Integrated and Quick-to-assemble multielectrode array platform. This platform additionally integrates optical fibers with independently adjustable electrodes to allow simultaneous single unit recordings and circuit-specific optogenetic targeting and/or manipulation. In current designs, the fully assembled platforms are scalable from 2 to 32 microdrives, and yet range 1-3 g, light enough for small animals. Here, we describe the design process starting from intent in computer-aided design, parameter testing through finite element analysis and experimental means, and implementation of various applications across mice and rats. Combined, our methods may expand the utility of multielectrode recordings and their continued integration with other tools enabling functional dissection of intact neural circuits.

DISSECTING OCD CIRCUITS: FROM ANIMAL MODELS TO TARGETED TREATMENTS.

PubMed

Ahmari, Susanne E; Dougherty, Darin D

2015-08-01

Obsessive-compulsive disorder (OCD) is a chronic, severe mental illness with up to 2-3% prevalence worldwide. In fact, OCD has been classified as one of the world's 10 leading causes of illness-related disability according to the World Health Organization, largely because of the chronic nature of disabling symptoms.([1]) Despite the severity and high prevalence of this chronic and disabling disorder, there is still relatively limited understanding of its pathophysiology. However, this is now rapidly changing due to development of powerful technologies that can be used to dissect the neural circuits underlying pathologic behaviors. In this article, we describe recent technical advances that have allowed neuroscientists to start identifying the circuits underlying complex repetitive behaviors using animal model systems. In addition, we review current surgical and stimulation-based treatments for OCD that target circuit dysfunction. Finally, we discuss how findings from animal models may be applied in the clinical arena to help inform and refine targeted brain stimulation-based treatment approaches. © 2015 Wiley Periodicals, Inc.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, E.R.C. da; Filho, B.J.C.

This paper presents a PWM current clamping circuit for improving a series resonant DC link converter. This circuit is capable of reducing current peaks to about 1.2--1.4 times the DC bias current. When desired, resonant transition creates notches in the dc link current, allowing the converter`s switches to synchronize with external PWM strategy. A regulated DC current source may be obtained--by using a conventional rectifier source--to feed a DC load or a current source inverter. Phase plane approach makes ease the understanding the operation, control and design procedure of the circuit. Another topology is derived and its features compared tomore » the first circuit. Simulation results for the simplified circuit and for a three-phase induction motor driven by such inverter will be presented. Moreover, the principle is corroborated by experimental results.« less

Power-Switching Circuit

NASA Technical Reports Server (NTRS)

Praver, Gerald A.; Theisinger, Peter C.; Genofsky, John

1987-01-01

Functions of circuit breakers, meters, and switches combined. Circuit that includes power field-effect transistors (PFET's) provides on/off switching, soft starting, current monitoring, current tripping, and protection against overcurrent for 30-Vdc power supply at normal load currents up to 2 A. Has no moving parts.

Starting Circuit For Erasable Programmable Logic Device

NASA Technical Reports Server (NTRS)

Cole, Steven W.

1990-01-01

Voltage regulator bypassed to supply starting current. Starting or "pullup" circuit supplies large inrush of current required by erasable programmable logic device (EPLD) while being turned on. Operates only during such intervals of high demand for current and has little effect any other time. Performs needed bypass, acting as current-dependent shunt connecting battery or other source of power more nearly directly to EPLD. Input capacitor of regulator removed when starting circuit installed, reducing probability of damage to transistor in event of short circuit in or across load.

The Relationship between the Current Waveform just before the Current Zero and the Interruption Ability in the High-speed VCB

NASA Astrophysics Data System (ADS)

Niwa, Yoshimitsu; Matsuzaki, Jun; Yokokura, Kunio

The high-speed vacuum circuit breaker, which forced the fault current to zero was investigated. The test circuit breaker consisted of a vacuum interrupter and a high frequency current source. The vacuum interrupter, which had the axial magnetic field electrode and the disk shape electrode, was tested. The arcing period of the high-speed vacuum circuit breaker is much shorter than that of conventional circuit breaker. The arc behavior of the test electrodes immediately after the contact separation was observed by a high-speed video camcorder. The relation between the current waveform just before the current zero and the interruption ability by varying the high frequency current source was investigated experimentally. The results demonstrate the interruption ability and the arc behavior of the high-speed vacuum circuit breaker. The high current interruption was made possible by the low current period just before the current zero, although the arcing time is short and the arc is concentrated.

Simple Cell Balance Circuit

NASA Technical Reports Server (NTRS)

Johnson, Steven D.; Byers, Jerry W.; Martin, James A.

2012-01-01

A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

Low phase noise oscillator using two parallel connected amplifiers

NASA Technical Reports Server (NTRS)

Kleinberg, Leonard L.

1987-01-01

A high frequency oscillator is provided by connecting two amplifier circuits in parallel where each amplifier circuit provides the other amplifier circuit with the conditions necessary for oscillation. The inherent noise present in both amplifier circuits causes the quiescent current, and in turn, the generated frequency, to change. The changes in quiescent current cause the transconductance and the load impedance of each amplifier circuit to vary, and this in turn results in opposing changes in the input susceptance of each amplifier circuit. Because the changes in input susceptance oppose each other, the changes in quiescent current also oppose each other. The net result is that frequency stability is enhanced.

Simple constant-current-regulated power supply

NASA Technical Reports Server (NTRS)

Priebe, D. H. E.; Sturman, J. C.

1977-01-01

Supply incorporates soft-start circuit that slowly ramps current up to set point at turn-on. Supply consists of full-wave rectifier, regulating pass transistor, current feedback circuit, and quad single-supply operational-amplifier circuit providing control. Technique is applicable to any system requiring constant dc current, such as vacuum tube equipment, heaters, or battery charges; it has been used to supply constant current for instrument calibration.

Active books: the design of an implantable stimulator that minimizes cable count using integrated circuits very close to electrodes.

PubMed

Liu, Xiao; Demosthenous, Andreas; Vanhoestenberghe, Anne; Jiang, Dai; Donaldson, Nick

2012-06-01

This paper presents an integrated stimulator that can be embedded in implantable electrode books for interfacing with nerve roots at the cauda equina. The Active Book overcomes the limitation of conventional nerve root stimulators which can only support a small number of stimulating electrodes due to cable count restriction through the dura. Instead, a distributed stimulation system with many tripole electrodes can be configured using several Active Books which are addressed sequentially. The stimulator was fabricated in a 0.6-μm high-voltage CMOS process and occupies a silicon area of 4.2 × 6.5 mm(2). The circuit was designed to deliver up to 8 mA stimulus current to tripole electrodes from an 18 V power supply. Input pad count is limited to five (two power and three control lines) hence requiring a specific procedure for downloading stimulation commands to the chip and extracting information from it. Supported commands include adjusting the amplitude of stimulus current, varying the current ratio at the two anodes in each channel, and measuring relative humidity inside the chip package. In addition to stimulation mode, the chip supports quiescent mode, dissipating less than 100 nA current from the power supply. The performance of the stimulator chip was verified with bench tests including measurements using tripoles in saline.

Voltage Amplifier Based on Organic Electrochemical Transistor.

PubMed

Braendlein, Marcel; Lonjaret, Thomas; Leleux, Pierre; Badier, Jean-Michel; Malliaras, George G

2017-01-01

Organic electrochemical transistors (OECTs) are receiving a great deal of attention as amplifying transducers for electrophysiology. A key limitation of this type of transistors, however, lies in the fact that their output is a current, while most electrophysiology equipment requires a voltage input. A simple circuit is built and modeled that uses a drain resistor to produce a voltage output. It is shown that operating the OECT in the saturation regime provides increased sensitivity while maintaining a linear signal transduction. It is demonstrated that this circuit provides high quality recordings of the human heart using readily available electrophysiology equipment, paving the way for the use of OECTs in the clinic.

The ac power line protection for an IEEE 587 Class B environment

NASA Technical Reports Server (NTRS)

Roehr, W. D.; Clark, O. M.

1984-01-01

The 587B series of protectors are unique, low clamping voltage transient suppressors to protect ac-powered equipment from the 6000V peak open-circuit voltage and 3000A short circuit current as defined in IEEE standard 587 for Category B transients. The devices, which incorporate multiple-stage solid-state protector components, were specifically designed to operate under multiple exposures to maximum threat levels in this severe environment. The output voltage peaks are limited to 350V under maximum threat conditions for a 120V ac power line, thus providing adequate protection to vulnerable electronic equipment. The principle of operation and test performance data is discussed.

The 25 kW resonant dc/dc power converter

NASA Technical Reports Server (NTRS)

Robson, R. R.

1983-01-01

The feasibility of processing 25-kW of power with a single, transistorized, series resonant converter stage was demonstrated by the successful design, development, fabrication, and testing of such a device which employs four Westinghouse D7ST transistors in a full-bridge configuration and operates from a 250-to-350 Vdc input bus. The unit has an overall worst-case efficiency of 93.5% at its full rated output of 1000 V and 25 A dc. A solid-state dc input circuit breaker and output-transient-current limiters are included in and integrated into the design. Full circuit details of the converter are presented along with the test data.

Radiation-Tolerant Intelligent Memory Stack - RTIMS

NASA Technical Reports Server (NTRS)

Ng, Tak-kwong; Herath, Jeffrey A.

2011-01-01

This innovation provides reconfigurable circuitry and 2-Gb of error-corrected or 1-Gb of triple-redundant digital memory in a small package. RTIMS uses circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field-programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuits are stacked into a module of 42.7 42.7 13 mm. Triple module redundancy, current limiting, configuration scrubbing, and single- event function interrupt detection are employed to mitigate radiation effects. The novel self-scrubbing and single event functional interrupt (SEFI) detection allows a relatively soft FPGA to become radiation tolerant without external scrubbing and monitoring hardware

Nonlinear analysis of a family of LC tuned inverters. [dc to square wave circuits for power conditioning

NASA Technical Reports Server (NTRS)

Lee, F. C. Y.; Wilson, T. G.

1974-01-01

A family of four dc-to-square-wave LC tuned inverters are analyzed using singular point. Limit cycles and waveshape characteristics are given for three modes of oscillation: quasi-harmonic, relaxation, and discontinuous. An inverter in which the avalanche breakdown of the transistor emitter-to-base junction occurs is discussed and the starting characteristics of this family of inverters are presented. The LC tuned inverters are shown to belong to a family of inverters with a common equivalent circuit consisting of only three 'series' elements: a five-segment piecewise-linear current-controlled resistor, linear inductor, and linear capacitor.

Commutating Permanent-Magnet Motors At Low Speed

NASA Technical Reports Server (NTRS)

Dolland, C.

1985-01-01

Circuit provides forced commutation during starting. Forced commutation circuit diverts current from inverter SCR's and turns SCR's off during commutation intervals. Silicon controlled rectifier in circuit unnecessary when switch S10 replaced by high-current, high-voltage transistor. At present, high-current, low-voltage device must suffice.

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2010 CFR

2010-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2012 CFR

2012-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2014 CFR

2014-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2011 CFR

2011-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2013 CFR

2013-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

RF lockout circuit for electronic locking system

NASA Astrophysics Data System (ADS)

Becker, Earl M., Jr.; Miller, Allen

1991-02-01

An electronics lockout circuit was invented that includes an antenna adapted to receive radio frequency signals from a transmitter, and a radio frequency detector circuit which converts the radio frequency signals into a first direct current voltage indicative of the relative strength of the field resulting from the radio frequency signals. The first direct current voltage is supplied to a trigger circuit which compares this direct current voltage to an adjustable direct current reference voltage. This provides a second direct current voltage at the output whenever the amplitude of the first direct current voltage exceeds the amplitude of the reference voltage provided by the comparator circuit. This is supplied to a disconnect relay circuit which, upon receiving a signal from the electronic control unit of an electronic combination lock during the time period at which the second direct current voltage is present, isolates the door strike coil of a security door from the electronic control unit. This prevents signals falsely generated by the electronic control unit because of radio frequency signals in the vicinity of the electronic control unit energizing the door strike coil and accidentally opening a security door.

An alternative explanation for the occurrence of short circuit current increases in the small intestine following challenge by bacterial enterotoxins.

PubMed

Lucas, M L

2013-10-01

Secretory diarrhoeal disease due to enterotoxins is thought to arise from the enhancement to pathologically high rates of normally occurring chloride ion and therefore fluid secretion from enterocytes. In support of this concept, many enterotoxins increase intestinal short-circuit current, regarded now as faithfully reflecting the increased chloride ion secretion. Contradicting this assumption, STa reduces absorption but does not cause secretion in vivo although short-circuit current is increased in vitro. There is therefore a mismatch between an assumed enterocyte mediated secretory event that should but does not cause net fluid secretion and an undoubtedly increased short-circuit current. It is proposed here that short-circuit current increases are not themselves secretory events but result from interrupted fluid absorption. A noteworthy feature of compounds that inhibit the increase in short-circuit current is that the majority are vasoactive, neuroactive or both. In general, vasodilator substances increase current. An alternative hypothesis for the origin of short-circuit current increases is that these result from reflex induction of electrogenic fluid absorption. This reflex enhances a compensatory response that is also present at a cellular level. An intestinal reflex is therefore proposed by which decreases in interstitial and intravascular volume or pressure within the intestine initiate an electrogenic fluid absorption mechanism that compensates for the loss of electrically neutral fluid absorption. This hypothesis would explain the apparently complex pharmacology of short-circuit current increases since many depressor substances have receptors in common with enterocytes and enteric nerves. The proposed alternative view of the origin of short-circuit current increases assumes that these do not represent chloride secretion from the enterocytes. This view may therefore aid the successful development of anti-diarrhoeal drugs to overcome a major cause of infant mortality worldwide, if short-circuit current data are being persistently misinterpreted. The putative but testable link between interstitial volume or pressure and fluid absorption also provides support for the alternative view of secretion; namely, that enhanced capillary and epithelial cell tight junctional permeability together with increased intracapillary pressure may cause secretion and not chloride exit from the enterocytes. Copyright © 2013. Published by Elsevier Ltd.

A new structure design and the basic radiation characteristics test of the intense current tube

NASA Astrophysics Data System (ADS)

Li, Zhiyuan; Ai, Xianyun; Fu, Li; Cui, Hui

2018-02-01

As a kind of special G-M counter, the intense current tube (ICT) is characterized by small ratio of cathode to anode radius, high working current or count rate, and can be used as the detection units of ultra-high range radiation instruments. In this paper, a new design of ICT structure is introduced, not only does it have a minimum ratio of cathode to anode but it also has a cathode which directly sticks out from the sensitive gas. Using COMSOL Multiphysics, we simulated the electric field between the anode and cathode and finalized the optimal structure. The results of processes and experiments show that the structure has better properties, with plateau slope reaching up to 7.4% within 100V, and it also has a wider range of dose rate. The linear data between the bottom limit of 0.2mGy/h and the upper limit of 1Gy/h is quite accurate but it becomes less reliable beyond 1Gy/h. By using Paralyzable model, we deduce that the dead time of the said ICT is less than 13.4 µs, and we will further optimize the readout circuit in order to reduce the resolution time of the circuit in the near future.

Design issues of a low cost lock-in amplifier readout circuit for an infrared detector

NASA Astrophysics Data System (ADS)

Scheepers, L.; Schoeman, J.

2014-06-01

In the past, high resolution thermal sensors required expensive cooling techniques making the early thermal imagers expensive to operate and cumbersome to transport, limiting them mainly to military applications. However, the introduction of uncooled microbolometers has overcome many of earlier problems and now shows great potential for commercial optoelectric applications. The structure of uncooled microbolometer sensors, especially their smaller size, makes them attractive in low cost commercial applications requiring high production numbers with relatively low performance requirements. However, the biasing requirements of these microbolometers cause these sensors to generate a substantial amount of noise on the output measurements due to self-heating. Different techniques to reduce this noise component have been attempted, such as pulsed biasing currents and the use of blind bolometers as common mode reference. These techniques proved to either limit the performance of the microbolometer or increase the cost of their implementation. The development of a low cost lock-in amplifier provides a readout technique to potentially overcome these challenges. High performance commercial lock-in amplifiers are very expensive. Using this as a readout circuit for a microbolometer will take away from the low manufacturing cost of the detector array. Thus, the purpose of this work was to develop a low cost readout circuit using the technique of phase sensitive detection and customizing this as a readout circuit for microbolometers. The hardware and software of the readout circuit was designed and tested for improvement of the signal-to-noise ratio (SNR) of the microbolometer signal. An optical modulation system was also developed in order to effectively identify the desired signal from the noise with the use of the readout circuit. A data acquisition and graphical user interface sub system was added in order to display the signal recovered by the readout circuit. The readout circuit was able to enhance the SNR of the microbolometer signal significantly. It was shown that the quality of the phase sensitive detector plays a significant role in the effectiveness of the readout circuit to improve the SNR.

46 CFR 111.52-3 - Systems below 1500 kilowatts.

Code of Federal Regulations, 2010 CFR

2010-10-01

...-GENERAL REQUIREMENTS Calculation of Short-Circuit Currents § 111.52-3 Systems below 1500 kilowatts. The following short-circuit assumptions must be made for a system with an aggregate generating capacity below... maximum short-circuit current of a direct current system must be assumed to be 10 times the aggregate...

30 CFR 75.825 - Power centers.

Code of Federal Regulations, 2011 CFR

2011-07-01

..., and be designed and installed as follows: (1) Rated for the maximum phase-to-phase voltage of the circuit; (2) Rated for the full-load current of the circuit that is supplied power through the device. (3... current of the circuit or causes the current to be interrupted automatically before the disconnecting...

A device for testing cables

NASA Technical Reports Server (NTRS)

Hayhurst, Arthur Ray (Inventor)

1993-01-01

A device for testing current paths is attachable to a conductor. The device automatically checks the current paths of the conductor for continuity of a center conductor, continuity of a shield, and a short circuit between the shield and the center conductor. The device includes a pair of connectors and a circuit to provide for testing of the conductive paths of a cable to be tested with the circuit paths of the circuit. The circuit paths in the circuit include indicators to simultaneously indicate the results of the testing.

High power and ultra-low-noise photodetector for squeezed-light enhanced gravitational wave detectors.

PubMed

Grote, Hartmut; Weinert, Michael; Adhikari, Rana X; Affeldt, Christoph; Kringel, Volker; Leong, Jonathan; Lough, James; Lück, Harald; Schreiber, Emil; Strain, Kenneth A; Vahlbruch, Henning; Wittel, Holger

2016-09-05

Current laser-interferometric gravitational wave detectors employ a self-homodyne readout scheme where a comparatively large light power (5-50 mW) is detected per photosensitive element. For best sensitivity to gravitational waves, signal levels as low as the quantum shot noise have to be measured as accurately as possible. The electronic noise of the detection circuit can produce a relevant limit to this accuracy, in particular when squeezed states of light are used to reduce the quantum noise. We present a new electronic circuit design reducing the electronic noise of the photodetection circuit in the audio band. In the application of this circuit at the gravitational-wave detector GEO 600 the shot-noise to electronic noise ratio was permanently improved by a factor of more than 4 above 1 kHz, while the dynamic range was improved by a factor of 7. The noise equivalent photocurrent of the implemented photodetector and circuit is about 5μA/Hz above 1 kHz with a maximum detectable photocurrent of 20 mA. With the new circuit, the observed squeezing level in GEO 600 increased by 0.2 dB. The new circuit also creates headroom for higher laser power and more squeezing to be observed in the future in GEO 600 and is applicable to other optics experiments.

Biocompatible circuit-breaker chip for thermal management of biomedical microsystems

NASA Astrophysics Data System (ADS)

Luo, Yi; Dahmardeh, Masoud; Takahata, Kenichi

2015-05-01

This paper presents a thermoresponsive micro circuit breaker for biomedical applications specifically targeted at electronic intelligent implants. The circuit breaker is micromachined to have a shape-memory-alloy cantilever actuator as a normally closed temperature-sensitive switch to protect the device of interest from overheating, a critical safety feature for smart implants including those that are electrothermally driven with wireless micro heaters. The device is fabricated in a size of 1.5  ×  2.0  ×  0.46 mm3 using biocompatible materials and a chip-based titanium package, exhibiting a nominal cold-state resistance of 14 Ω. The breaker rapidly enters the full open condition when the chip temperature exceeds 63 °C, temporarily breaking the circuit of interest to lower its temperature until chip temperature drops to 51 °C, at which the breaker closes the circuit to allow current to flow through it again, physically limiting the maximum temperature of the circuit. This functionality is tested in combination with a wireless resonant heater powered by radio-frequency electromagnetic radiation, demonstrating self-regulation of heater temperature. The developed circuit-breaker chip operates in a fully passive manner that removes the need for active sensor and circuitry to achieve temperature regulation in a target device, contributing to the miniaturization of biomedical microsystems including electronic smart implants where thermal management is essential.

A solid-state controllable power supply for a magnetic suspension wind tunnel

NASA Technical Reports Server (NTRS)

Daniels, Taumi S.; Tripp, John S.

1991-01-01

The NASA Langley 6-inch Magnetic Suspension and Balance System (6-in. MSBS) requires an independently controlled bidirectional dc power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance-coupled thyratron-controlled rectifiers as well as ac to dc motor-generator converters, is obsolete, inefficient, and unreliable. A replacement six-phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full-load efficiency is 80 percent compared with 25 percent for the resistance-coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20-kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

NASA Technical Reports Server (NTRS)

Gummin, Mark A.

2011-01-01

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Anomalous transport in discrete arcs and simulation of double layers in a model auroral circuit

NASA Technical Reports Server (NTRS)

Smith, Robert A.

1987-01-01

The evolution and long-time stability of a double layer (DL) in a discrete auroral arc requires that the parallel current in the arc, which may be considered uniform at the source, be diverted within the arc to charge the flanks of the U-shaped double layer potential structure. A simple model is presented in which this current redistribution is effected by anomalous transport based on electrostatic lower hybrid waves driven by the flank structure itself. This process provides the limiting constraint on the double layer potential. The flank charging may be represented as that of a nonlinear transmission line. A simplified model circuit, in which the transmission line is represented by a nonlinear impedance in parallel with a variable resistor, is incorporated in a one-dimensional simulation model to give the current density at the DL boundaries. Results are presented for the scaling of the DL potential as a function of the width of the arc and the saturation efficiency of the lower hybrid instability mechanism.

Anomalous transport in discrete arcs and simulation of double layers in a model auroral circuit

NASA Technical Reports Server (NTRS)

Smith, Robert A.

1987-01-01

The evolution and long-time stability of a double layer in a discrete auroral arc requires that the parallel current in the arc, which may be considered uniform at the source, be diverted within the arc to charge the flanks of the U-shaped double-layer potential structure. A simple model is presented in which this current re-distribution is effected by anomalous transport based on electrostatic lower hybrid waves driven by the flank structure itself. This process provides the limiting constraint on the double-layer potential. The flank charging may be represented as that of a nonlinear transmission. A simplified model circuit, in which the transmission line is represented by a nonlinear impedance in parallel with a variable resistor, is incorporated in a 1-d simulation model to give the current density at the DL boundaries. Results are presented for the scaling of the DL potential as a function of the width of the arc and the saturation efficiency of the lower hybrid instability mechanism.

46 CFR 183.340 - Cable and wiring requirements.

Code of Federal Regulations, 2010 CFR

2010-10-01

... a manner as to avoid chafing and other damage. The use of plastic tie wraps must be limited to... requirements. (a) If individual wires, rather than cable, are used in systems greater than 50 volts, the wire... current carrying capacity for the circuit in which they are used; (2) Be installed in a manner to avoid or...

A complete dc characterization of a constant-frequency, clamped-mode, series-resonant converter

NASA Technical Reports Server (NTRS)

Tsai, Fu-Sheng; Lee, Fred C.

1988-01-01

The dc behavior of a clamped-mode series-resonant converter is characterized systematically. Given a circuit operating condition, the converter's mode of operation is determined and various circuit parameters are calculated, such as average inductor current (load current), rms inductor current, peak capacitor voltage, rms switch currents, average diode currents, switch turn-on currents, and switch turn-off currents. Regions of operation are defined, and various circuit characteristics are derived to facilitate the converter design.

Protective Socket For Integrated Circuits

NASA Technical Reports Server (NTRS)

Wilkinson, Chris; Henegar, Greg

1988-01-01

Socket for intergrated circuits (IC's) protects from excessive voltages and currents or from application of voltages and currents in wrong sequence during insertion or removal. Contains built-in switch that opens as IC removed, disconnecting leads from signals and power. Also protects other components on circuit board from transients produced by insertion and removal of IC. Makes unnecessary to turn off power to entire circuit board so other circuits on board continue to function.

Sensitivity of Proposed Search for Axion-induced Magnetic Field using Optically Pumped Magnetometers

DOE PAGES

Chu, Pinghan; Duffy, Leanne Delma; Kim, Young Jin; ...

2018-04-17

We investigate the sensitivity of a search for the oscillating current induced by axion dark matter in an external magnetic field using optically pumped magnetometers. This experiment is based upon the LC circuit (circuit with inductor and capacitor) axion detection concept of Sikivie et al. [Phys. Rev. Lett. 112, 131301 (2014)]. The modification of Maxwell’s equations caused by the axion-photon coupling results in a minute magnetic field oscillating at a frequency equal to the axion mass, in the presence of an external magnetic field. The axion-induced magnetic field could be searched for using a LC circuit amplifier with an opticallymore » pumped magnetometer, the most sensitive cryogen-free magnetic-field sensor, in a room-temperature experiment, avoiding the need for a complicated and expensive cryogenic system. Here, we discuss how an existing magnetic resonance imaging experiment can be modified to search for axions in a previously unexplored part of the parameter space. Our existing detection setup, optimized for magnetic resonance imagining, is already sensitive to an axion-photon coupling of 10 -7 GeV -1 for an axion mass near 3 × 10 -10 eV, which is already limited by astrophysical processes and solar axion searches. We show that realistic modifications, and optimization of the experiment for axion detection, can probe the axion-photon coupling up to 4 orders of magnitude beyond the current best limit, for axion masses between 10 -1 and 10 -7 eV.« less

Sensitivity of Proposed Search for Axion-induced Magnetic Field using Optically Pumped Magnetometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Pinghan; Duffy, Leanne Delma; Kim, Young Jin

We investigate the sensitivity of a search for the oscillating current induced by axion dark matter in an external magnetic field using optically pumped magnetometers. This experiment is based upon the LC circuit (circuit with inductor and capacitor) axion detection concept of Sikivie et al. [Phys. Rev. Lett. 112, 131301 (2014)]. The modification of Maxwell’s equations caused by the axion-photon coupling results in a minute magnetic field oscillating at a frequency equal to the axion mass, in the presence of an external magnetic field. The axion-induced magnetic field could be searched for using a LC circuit amplifier with an opticallymore » pumped magnetometer, the most sensitive cryogen-free magnetic-field sensor, in a room-temperature experiment, avoiding the need for a complicated and expensive cryogenic system. Here, we discuss how an existing magnetic resonance imaging experiment can be modified to search for axions in a previously unexplored part of the parameter space. Our existing detection setup, optimized for magnetic resonance imagining, is already sensitive to an axion-photon coupling of 10 -7 GeV -1 for an axion mass near 3 × 10 -10 eV, which is already limited by astrophysical processes and solar axion searches. We show that realistic modifications, and optimization of the experiment for axion detection, can probe the axion-photon coupling up to 4 orders of magnitude beyond the current best limit, for axion masses between 10 -1 and 10 -7 eV.« less

The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, James E.; Purdue University, West Lafayette, Indiana 47907; Hages, Charles J.

2016-07-11

Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cells typically exhibit high short-circuit current density (J{sub sc}), but have reduced cell efficiencies relative to other thin film technologies due to a deficit in the open-circuit voltage (V{sub oc}), which prevent these devices from becoming commercially competitive. Recent research has attributed the low V{sub oc} in CZTSSe devices to small scale disorder that creates band tail states within the absorber band gap, but the physical processes responsible for this V{sub oc} reduction have not been elucidated. In this paper, we show that carrier recombination through non-mobile band tail states has a strong voltage dependencemore » and is a significant performance-limiting factor, and including these effects in simulation allows us to simultaneously explain the V{sub oc} deficit, reduced fill factor, and voltage-dependent quantum efficiency with a self-consistent set of material parameters. Comparisons of numerical simulations to measured data show that reasonable values for the band tail parameters (characteristic energy, capture rate) can account for the observed low V{sub oc}, high J{sub sc}, and voltage dependent collection efficiency. These results provide additional evidence that the presence of band tail states accounts for the low efficiencies of CZTSSe solar cells and further demonstrates that recombination through non-mobile band tail states is the dominant efficiency limiting mechanism.« less

Sensitivity of proposed search for axion-induced magnetic field using optically pumped magnetometers

NASA Astrophysics Data System (ADS)

Chu, P.-H.; Duffy, L. D.; Kim, Y. J.; Savukov, I. M.

2018-04-01

We investigate the sensitivity of a search for the oscillating current induced by axion dark matter in an external magnetic field using optically pumped magnetometers. This experiment is based upon the LC circuit (circuit with inductor and capacitor) axion detection concept of Sikivie et al. [Phys. Rev. Lett. 112, 131301 (2014), 10.1103/PhysRevLett.112.131301]. The modification of Maxwell's equations caused by the axion-photon coupling results in a minute magnetic field oscillating at a frequency equal to the axion mass, in the presence of an external magnetic field. The axion-induced magnetic field could be searched for using a LC circuit amplifier with an optically pumped magnetometer, the most sensitive cryogen-free magnetic-field sensor, in a room-temperature experiment, avoiding the need for a complicated and expensive cryogenic system. We discuss how an existing magnetic resonance imaging experiment can be modified to search for axions in a previously unexplored part of the parameter space. Our existing detection setup, optimized for magnetic resonance imagining, is already sensitive to an axion-photon coupling of 10-7 GeV-1 for an axion mass near 3 ×10-10 eV , which is already limited by astrophysical processes and solar axion searches. We show that realistic modifications, and optimization of the experiment for axion detection, can probe the axion-photon coupling up to 4 orders of magnitude beyond the current best limit, for axion masses between 10-11 and 10-7 eV .

The dc power circuits: A compilation

NASA Technical Reports Server (NTRS)

1972-01-01

A compilation of reports concerning power circuits is presented for the dissemination of aerospace information to the general public as part of the NASA Technology Utilization Program. The descriptions for the electronic circuits are grouped as follows: dc power supplies, power converters, current-voltage power supply regulators, overload protection circuits, and dc constant current power supplies.

Module Twelve: Series AC Resistive-Reactive Circuits; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The module covers series circuits which contain both resistive and reactive components and methods of solving these circuits for current, voltage, impedance, and phase angle. The module is divided into six lessons: voltage and impedance in AC (alternating current) series circuits, vector computations, rectangular and polar notation, variational…

Module failure isolation circuit for paralleled inverters. [preventing system failure during power conditioning for spacecraft applications

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1979-01-01

A module failure isolation circuit is described which senses and averages the collector current of each paralled inverter power transistor and compares the collector current of each power transistor the average collector current of all power transistors to determine when the sensed collector current of a power transistor in any one inverter falls below a predetermined ratio of the average collector current. The module associated with any transistor that fails to maintain a current level above the predetermined radio of the average collector current is then shut off. A separate circuit detects when there is no load, or a light load, to inhibit operation of the isolation circuit during no load or light load conditions.

46 CFR 28.860 - Overcurrent protection and switched circuits.

Code of Federal Regulations, 2010 CFR

2010-10-01

... current carrying conductor must be protected in accordance with its current carrying capacity by a circuit breaker or fuse at the connection to the switchboard or distribution panel bus. (d) Each circuit breaker...

46 CFR 28.860 - Overcurrent protection and switched circuits.

Code of Federal Regulations, 2011 CFR

2011-10-01

... current carrying conductor must be protected in accordance with its current carrying capacity by a circuit breaker or fuse at the connection to the switchboard or distribution panel bus. (d) Each circuit breaker...

30 CFR 77.900-2 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2011 CFR

2011-07-01

... protecting low- and medium-voltage circuits serving three-phase alternating current equipment and such record... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-1 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2011 CFR

2011-07-01

... protecting low- and medium-voltage circuits serving portable or mobile three-phase alternating current... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-2 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2010 CFR

2010-07-01

... protecting low- and medium-voltage circuits serving three-phase alternating current equipment and such record... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-1 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

... protecting low- and medium-voltage circuits serving portable or mobile three-phase alternating current... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

The effects of amiloride and age on oxygen consumption coupled to electrogenic sodium transport in the human sigmoid colon.

PubMed

Carra, Graciela E; Matus, Daniel; Ibáñez, Jorge E; Saraví, Fernando D

2015-01-01

Aerobic metabolism is necessary for ion transport in many transporting epithelia, including the human colonic epithelium. We assessed the effects of the epithelial sodium channel blocker, amiloride, on oxygen consumption and short-circuit current of the human sigmoid epithelium to determine whether these effects were influenced by the age of the subject. Segments of the sigmoid colon were obtained from the safety margin of resections performed in patients of 62-77 years of age. Isolated mucosa preparations were obtained and mounted in airtight Ussing chambers, fit for simultaneous measurement of short-circuit current and oxygen concentration, before and after blocking epithelial sodium channels with amiloride (0.1 mmol/L). Regression analyses were performed to assess the associations between short-circuit current, oxygen consumption, and age of the subject as well as to define the relationship between the decreases in short-circuit current and oxygen consumption after blockade. Epithelial sodium channel blockade caused an 80% reduction in short-circuit current and a 26% reduction in oxygen consumption. Regression analysis indicated that both changes were significantly related (r = 0.884;P = 0.0007). Oxygen consumption decreased by 1 m mol/h/cm2 for each 25 m A/cm2 decrease in short-circuit current. Neither short-circuit current nor oxygen consumption had any significant relationship with the age of the subjects. The decrease in epithelial oxygen consumption caused by amiloride is proportional to the decrease in short-circuit current and independent of the age of the subject.

Uncertain behaviours of integrated circuits improve computational performance.

PubMed

Yoshimura, Chihiro; Yamaoka, Masanao; Hayashi, Masato; Okuyama, Takuya; Aoki, Hidetaka; Kawarabayashi, Ken-ichi; Mizuno, Hiroyuki

2015-11-20

Improvements to the performance of conventional computers have mainly been achieved through semiconductor scaling; however, scaling is reaching its limitations. Natural phenomena, such as quantum superposition and stochastic resonance, have been introduced into new computing paradigms to improve performance beyond these limitations. Here, we explain that the uncertain behaviours of devices due to semiconductor scaling can improve the performance of computers. We prototyped an integrated circuit by performing a ground-state search of the Ising model. The bit errors of memory cell devices holding the current state of search occur probabilistically by inserting fluctuations into dynamic device characteristics, which will be actualised in the future to the chip. As a result, we observed more improvements in solution accuracy than that without fluctuations. Although the uncertain behaviours of devices had been intended to be eliminated in conventional devices, we demonstrate that uncertain behaviours has become the key to improving computational performance.

Development of a multiperspective optical measuring system for investigating decaying switching arcs at the nozzle exit of circuit breakers.

PubMed

Stoffels, M; Simon, S; Nikolic, P G; Stoller, P; Carstensen, J

2017-03-01

High-voltage gas circuit breakers, which play an important role in the operation and protection of the power grid, function by drawing an arc between two contacts and then extinguishing it by cooling it using a transonic gas flow. Improving the design of circuit breakers requires an understanding of the physical processes in the interruption of the arc, particularly during the zero crossing of the alternating current (the point in time when the arc can be interrupted). Most diagnostic techniques currently available focus on measurement of current, voltage, and gas pressure at defined locations. However, these integral properties do not give sufficient insight into the arc physics. To understand the current interruption process, spatially resolved information about the density, temperature, and conductivity of the arc and surrounding gas flow is needed. Owing to the three-dimensional, unstable nature of the arc in a circuit breaker, especially near current zero, a spatially resolved, tomographic diagnostic technique is required that is capable of freezing the rapid, transient behavior and that is insensitive to the vibrations and electromagnetic interference inherent in the interruption of short-circuit current arcs. Here a new measurement system, based on background-oriented schlieren (BOS) imaging, is presented and assessed. BOS imaging using four beams consisting of white light sources, a background pattern, imaging optics, and a camera permits measurement of the line-of-sight integrated refractive index. Tomographic reconstruction is used to determine the three-dimensional, spatially resolved index of refraction distribution that in turn is used to calculate the density. The quantitative accuracy of a single beam of the BOS setup is verified by using a calibration lens with a known focal length. The ability of the tomographic reconstruction to detect asymmetric features of the arc and surrounding gas flow is assessed semiquantitatively using a nozzle that generates two gas jets, as described in [Exp. Fluids43, 241 (2007)EXFLDU0723-486410.1007/s00348-007-0331-1]. Experiments using a simple model of a circuit breaker, which provides optical access to an ∼1  kA arc that burns between two contacts and is blown through a nozzle system by synthetic air from a high pressure reservoir, are also described. The density in the decaying arc and surrounding gas flow is reconstructed, and the limitations of the technique, which are related to the temporal and spatial resolution, are addressed.

Pupils' Representations of Electric Current before, during and after Instruction on DC Circuits.

ERIC Educational Resources Information Center

Psillos, D.; And Others

1987-01-01

Reported are compulsory education pupils' representations of electric current in a constructivist approach to introducing direct current (DC) circuits. Suggests that the pupils views can be modelled after an energy framework. Makes suggestions about the content, the apparatus and the experiments used in teaching DC circuits. (CW)

Electromigration failures under bidirectional current stress

NASA Astrophysics Data System (ADS)

Tao, Jiang; Cheung, Nathan W.; Hu, Chenming

1998-01-01

Electromigration failure under DC stress has been studied for more than 30 years, and the methodologies for accelerated DC testing and design rules have been well established in the IC industry. However, the electromigration behavior and design rules under time-varying current stress are still unclear. In CMOS circuits, as many interconnects carry pulsed-DC (local VCC and VSS lines) and bidirectional AC current (clock and signal lines), it is essential to assess the reliability of metallization systems under these conditions. Failure mechanisms of different metallization systems (Al-Si, Al-Cu, Cu, TiN/Al-alloy/TiN, etc.) and different metallization structures (via, plug and interconnect) under AC current stress in a wide frequency range (from mHz to 500 MHz) has been study in this paper. Based on these experimental results, a damage healing model is developed, and electromigration design rules are proposed. It shows that in the circuit operating frequency range, the "design-rule current" is the time-average current. The pure AC component of the current only contributes to self-heating, while the average (DC component) current contributes to electromigration. To ensure longer thermal-migration lifetime under high frequency AC stress, an additional design rule is proposed to limit the temperature rise due to self-joule heating.

Evolution of separate screening soliton pairs in a biased series photorefractive crystal circuit.

PubMed

Liu, Jinsong; Hao, Zhonghua

2002-06-01

This paper presents calculations for an idea in photorefractive spatial soliton, namely, screening solitons form in a biased series photorefractive crystal circuit consisting of two photorefractive crystals connected electronically by electrode leads in a chain with a voltage source. A system of two coupled equations is derived under appropriate conditions for two-beam propagation in the crystal circuit. The possibility of obtaining steady-state bright and dark screening soliton solutions is investigated in one dimension and, the existence of dark-dark, bright-dark, and bright-bright separate screening soliton pairs in such a circuit is proved. The numerical results show that the two solitons in a soliton pair can affect each other by the light-induced current and their coupling can affect their spatial profiles, dynamical evolutions, stabilities, and self-deflection. Under the limit in which the optical wave has a spatial extent much less than the width of the crystal, only the dark soliton can affect the other soliton by the light-induced current, but the bright soliton cannot. For a bright-dark or dark-dark soliton pair, the dark soliton in a weak input intensity can be obtained for a larger nonlinearity than for a stronger input intensity. For a bright-dark soliton pair, increasing the input intensity of the dark soliton can increase the bending angle of the bright soliton. Some potential applications are discussed.

Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects

NASA Technical Reports Server (NTRS)

Alt, Shannon

2016-01-01

Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.

Direct current ballast circuit for metal halide lamp

NASA Technical Reports Server (NTRS)

Lutus, P. (Inventor)

1981-01-01

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

Large Scale Reduction of Graphite Oxide Project

NASA Technical Reports Server (NTRS)

Calle, Carlos; Mackey, Paul; Falker, John; Zeitlin, Nancy

2015-01-01

This project seeks to develop an optical method to reduce graphite oxide into graphene efficiently and in larger formats than currently available. Current reduction methods are expensive, time-consuming or restricted to small, limited formats. Graphene has potential uses in ultracapacitors, energy storage, solar cells, flexible and light-weight circuits, touch screens, and chemical sensors. In addition, graphite oxide is a sustainable material that can be produced from any form of carbon, making this method environmentally friendly and adaptable for in-situ reduction.

An Investigation of the Static Force Balance of a Model Railgun

DTIC Science & Technology

2007-06-01

this simple circuit diagram two 950 CCA batteries are passed through a variable resistor (R1) to limit the current applied to the model railgun (R2...of a known value and placed a voltmeter across the resistor . For additional protection in these early trials we inserted an equivalent 1kA fuse...our variable resistor . Current then passed through the resistor into the model gun, through a volt-meter with a known resistance, into a kilo-amp

Performance of Continuous Quantum Thermal Devices Indirectly Connected to Environments

NASA Astrophysics Data System (ADS)

González, J.; Alonso, Daniel; Palao, José

2016-04-01

A general quantum thermodynamics network is composed of thermal devices connected to the environments through quantum wires. The coupling between the devices and the wires may introduce additional decay channels which modify the system performance with respect to the directly-coupled device. We analyze this effect in a quantum three-level device connected to a heat bath or to a work source through a two-level wire. The steady state heat currents are decomposed into the contributions of the set of simple circuits in the graph representing the master equation. Each circuit is associated with a mechanism in the device operation and the system performance can be described by a small number of circuit representatives of those mechanisms. Although in the limit of weak coupling between the device and the wire the new irreversible contributions can become small, they prevent the system from reaching the Carnot efficiency.

Quantum information processing with superconducting circuits: a review.

PubMed

Wendin, G

2017-10-01

During the last ten years, superconducting circuits have passed from being interesting physical devices to becoming contenders for near-future useful and scalable quantum information processing (QIP). Advanced quantum simulation experiments have been shown with up to nine qubits, while a demonstration of quantum supremacy with fifty qubits is anticipated in just a few years. Quantum supremacy means that the quantum system can no longer be simulated by the most powerful classical supercomputers. Integrated classical-quantum computing systems are already emerging that can be used for software development and experimentation, even via web interfaces. Therefore, the time is ripe for describing some of the recent development of superconducting devices, systems and applications. As such, the discussion of superconducting qubits and circuits is limited to devices that are proven useful for current or near future applications. Consequently, the centre of interest is the practical applications of QIP, such as computation and simulation in Physics and Chemistry.

Quantum information processing with superconducting circuits: a review

NASA Astrophysics Data System (ADS)

Wendin, G.

2017-10-01

During the last ten years, superconducting circuits have passed from being interesting physical devices to becoming contenders for near-future useful and scalable quantum information processing (QIP). Advanced quantum simulation experiments have been shown with up to nine qubits, while a demonstration of quantum supremacy with fifty qubits is anticipated in just a few years. Quantum supremacy means that the quantum system can no longer be simulated by the most powerful classical supercomputers. Integrated classical-quantum computing systems are already emerging that can be used for software development and experimentation, even via web interfaces. Therefore, the time is ripe for describing some of the recent development of superconducting devices, systems and applications. As such, the discussion of superconducting qubits and circuits is limited to devices that are proven useful for current or near future applications. Consequently, the centre of interest is the practical applications of QIP, such as computation and simulation in Physics and Chemistry.

A Current-Mode Common-Mode Feedback Circuit (CMFB) with Rail-to-Rail Operation

NASA Astrophysics Data System (ADS)

Suadet, Apirak; Kasemsuwan, Varakorn

2011-03-01

This paper presents a current-mode common-mode feedback (CMFB) circuit with rail-to-rail operation. The CMFB is a stand-alone circuit, which can be connected to any low voltage transconductor without changing or upsetting the existing circuit. The proposed CMFB employs current mirrors, operating as common-mode detector and current amplifier to enhance the loop gain of the CMFB. The circuit employs positive feedback to enhance the output impedance and gain. The circuit has been designed using a 0.18 μm CMOS technology under 1V supply and analyzed using HSPICE with BSIM3V3 device models. A pseudo-differential amplifier using two common sources and the proposed CMFB shows rail to rail output swing (± 0.7 V) with low common-mode gain (-36 dB) and power dissipation of 390 μW.

Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers

DOEpatents

DeGeronimo, Gianluigi

2006-02-14

A charge amplifier includes an amplifier, feedback circuit, and cancellation circuit. The feedback circuit includes a capacitor, inverter, and current mirror. The capacitor is coupled across the signal amplifier, the inverter is coupled to the output of the signal amplifier, and the current mirror is coupled to the input of the signal amplifier. The cancellation circuit is coupled to the output of the signal amplifier. A method of charge amplification includes providing a signal amplifier; coupling a first capacitor across the signal amplifier; coupling an inverter to the output of the signal amplifier; coupling a current mirror to the input of the signal amplifier; and coupling a cancellation circuit to the output of the signal amplifier. A front-end system for use with radiation sensors includes a charge amplifier and a current amplifier, shaping amplifier, baseline stabilizer, discriminator, peak detector, timing detector, and logic circuit coupled to the charge amplifier.

Novel circuit design for high-impedance and non-local electrical measurements of two-dimensional materials

NASA Astrophysics Data System (ADS)

De Sanctis, Adolfo; Mehew, Jake D.; Alkhalifa, Saad; Tate, Callum P.; White, Ashley; Woodgate, Adam R.; Craciun, Monica F.; Russo, Saverio

2018-02-01

Two-dimensional materials offer a novel platform for the development of future quantum technologies. However, the electrical characterisation of topological insulating states, non-local resistance, and bandgap tuning in atomically thin materials can be strongly affected by spurious signals arising from the measuring electronics. Common-mode voltages, dielectric leakage in the coaxial cables, and the limited input impedance of alternate-current amplifiers can mask the true nature of such high-impedance states. Here, we present an optical isolator circuit which grants access to such states by electrically decoupling the current-injection from the voltage-sensing circuitry. We benchmark our apparatus against two state-of-the-art measurements: the non-local resistance of a graphene Hall bar and the transfer characteristic of a WS2 field-effect transistor. Our system allows the quick characterisation of novel insulating states in two-dimensional materials with potential applications in future quantum technologies.

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

NASA Technical Reports Server (NTRS)

Yoo, H. I.; Iles, P. A.; Tanner, D. P.

1979-01-01

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

A HIGH BANDWIDTH BIPOLAR POWER SUPPLY FOR THE FAST CORRECTORS IN THE APS UPGRADE*

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ju; Sprau, Gary

The APS Upgrade of a multi-bend achromat (MBA) storage ring requires a fast bipolar power supply for the fast correction magnets. The key performance requirement of the power supply includes a small-signal bandwidth of 10 kHz for the output current. This requirement presents a challenge to the design because of the high inductance of the magnet load and a limited input DC voltage. A prototype DC/DC power supply utilizing a MOSFET H-bridge circuit with a 500 kHz PWM has been developed and tested successfully. The prototype achieved a 10-kHz bandwidth with less than 3-dB attenuation for a signal 0.5% ofmore » the maximum operating current of 15 amperes. This paper presents the design of the power circuit, the PWM method, the control loop, and the test results.« less

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Performance evaluation of an architecture for the characterisation of photo-devices: design, fabrication and test on a CMOS technology

NASA Astrophysics Data System (ADS)

Castillo-Cabrera, G.; García-Lamont, J.; Reyes-Barranca, M. A.; Moreno-Cadenas, J. A.; Escobosa-Echavarría, A.

2011-03-01

In this report, the performance of a particular pixel's architecture is evaluated. It consists mainly of an optical sensor coupled to an amplifier. The circuit contains photoreceptors such as phototransistors and photodiodes. The circuit integrates two main blocks: (a) the pixel architecture, containing four p-channel transistors and a photoreceptor, and (b) a current source for biasing the signal conditioning amplifier. The generated photocurrent is integrated through the gate capacitance of the input p-channel MOS transistor, then converted to voltage and amplified. Both input transistor and current source are implemented as a voltage amplifier having variable gain (between 10dB and 32dB). Considering characterisation purposes, this last fact is relevant since it gives a degree of freedom to the measurement of different kinds of photo-devices and is not limited to either a single operating point of the circuit or one kind and size of photo-sensor. The gain of the amplifier can be adjusted with an external DC power supply that also sets the DC quiescent point of the circuit. Design of the row-select transistor's aspect ratio used in the matrix array is critical for the pixel's amplifier performance. Based on circuit design data such as capacitance magnitude, time and voltage integration, and amplifier gain, characterisation of all the architecture can be readily carried out and evaluated. For the specific technology used in this work, the spectral response of photo-sensors reveals performance differences between phototransistors and photodiodes. Good approximation between simulation and measurement was obtained.

Superconducting technology for overcurrent limiting in a 25 kA current injection system

NASA Astrophysics Data System (ADS)

Heydari, Hossein; Faghihi, Faramarz; Sharifi, Reza; Poursoltanmohammadi, Amir Hossein

2008-09-01

Current injection transformer (CIT) systems are within the major group of the standard type test of high current equipment in the electrical industry, so their performance becomes very important. When designing high current systems, there are many factors to be considered from which their overcurrent protection must be ensured. The output of a CIT is wholly dependent on the impedance of the equipment under test (EUT). Therefore current flow beyond the allowable limit can occur. The present state of the art provides an important guide to developing current limiters not only for the grid application but also in industrial equipment. This paper reports the state of the art in the technology available that could be developed into an application of superconductivity for high current equipment (CIT) protection with no test disruption. This will result in a greater market choice and lower costs for equipment protection solutions, reduced costs and improved system reliability. The paper will also push the state of the art by using two distinctive circuits, closed-core and open-core, for overcurrent protection of a 25 kA CIT system, based on a flux-lock-type superconducting fault current limiter (SFCL) and magnetic properties of high temperature superconducting (HTS) elements. An appropriate location of the HTS element will enhance the rate of limitation with the help of the magnetic field generated by the CIT output busbars. The calculation of the HTS parameters for overcurrent limiting is also performed to suit the required current levels of the CIT.

Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

NASA Astrophysics Data System (ADS)

Orama, Lionel R.

In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

30 CFR 75.900-4 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2011 CFR

2011-07-01

... circuits serving three-phase alternating current equipment used in the mine. Such record shall be kept in a... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900-4 Testing, examination, and...

30 CFR 75.900-4 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2010 CFR

2010-07-01

... circuits serving three-phase alternating current equipment used in the mine. Such record shall be kept in a... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900-4 Testing, examination, and...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2011 CFR

2011-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2014 CFR

2014-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2012 CFR

2012-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2010 CFR

2010-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2013 CFR

2013-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

Automatic method of measuring silicon-controlled-rectifier holding current

NASA Technical Reports Server (NTRS)

Maslowski, E. A.

1972-01-01

Development of automated silicon controlled rectifier circuit for measuring minimum anode current required to maintain rectifiers in conducting state is discussed. Components of circuit are described and principles of operation are explained. Illustration of circuit is provided.

Active shunt capacitance cancelling oscillator circuit

DOEpatents

Wessendorf, Kurt O.

2003-09-23

An oscillator circuit is disclosed which can be used to produce oscillation using a piezoelectric crystal, with a frequency of oscillation being largely independent of any shunt capacitance associated with the crystal (i.e. due to electrodes on the surfaces of the crystal and due to packaging and wiring for the crystal). The oscillator circuit is based on a tuned gain stage which operates the crystal at a frequency, f, near a series resonance frequency, f.sub.S. The oscillator circuit further includes a compensation circuit that supplies all the ac current flow through the shunt resistance associated with the crystal so that this ac current need not be supplied by the tuned gain stage. The compensation circuit uses a current mirror to provide the ac current flow based on the current flow through a reference capacitor that is equivalent to the shunt capacitance associated with the crystal. The oscillator circuit has applications for driving piezoelectric crystals for sensing of viscous, fluid or solid media by detecting a change in the frequency of oscillation of the crystal and a resonator loss which occur from contact of an exposed surface of the crystal by the viscous, fluid or solid media.

Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

Method and apparatus for current-output peak detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Geronimo, Gianluigi

2017-01-24

A method and apparatus for a current-output peak detector. A current-output peak detector circuit is disclosed and works in two phases. The peak detector circuit includes switches to switch the peak detector circuit from the first phase to the second phase upon detection of the peak voltage of an input voltage signal. The peak detector generates a current output with a high degree of accuracy in the second phase.

Fault tolerant system based on IDDQ testing

NASA Astrophysics Data System (ADS)

Guibane, Badi; Hamdi, Belgacem; Mtibaa, Abdellatif; Bensalem, Brahim

2018-06-01

Offline test is essential to ensure good manufacturing quality. However, for permanent or transient faults that occur during the use of the integrated circuit in an application, an online integrated test is needed as well. This procedure should ensure the detection and possibly the correction or the masking of these faults. This requirement of self-correction is sometimes necessary, especially in critical applications that require high security such as automotive, space or biomedical applications. We propose a fault-tolerant design for analogue and mixed-signal design complementary metal oxide (CMOS) circuits based on the quiescent current supply (IDDQ) testing. A defect can cause an increase in current consumption. IDDQ testing technique is based on the measurement of power supply current to distinguish between functional and failed circuits. The technique has been an effective testing method for detecting physical defects such as gate-oxide shorts, floating gates (open) and bridging defects in CMOS integrated circuits. An architecture called BICS (Built In Current Sensor) is used for monitoring the supply current (IDDQ) of the connected integrated circuit. If the measured current is not within the normal range, a defect is signalled and the system switches connection from the defective to a functional integrated circuit. The fault-tolerant technique is composed essentially by a double mirror built-in current sensor, allowing the detection of abnormal current consumption and blocks allowing the connection to redundant circuits, if a defect occurs. Spices simulations are performed to valid the proposed design.

Device for testing continuity and/or short circuits in a cable

NASA Technical Reports Server (NTRS)

Hayhurst, Arthur R. (Inventor)

1995-01-01

A device for testing current paths is attachable to a conductor. The device automatically checks the current paths of the conductor for continuity of a center conductor, continuity of a shield and a short circuit between the shield and the center conductor. The device includes a pair of connectors and a circuit to provide for testing of the conductive paths of the cable. The pair of connectors electrically connects the conductive paths of a cable to be tested with the circuit paths of the circuit. The circuit paths in the circuit include indicators to simultaneously indicate the results of the testing.

Modeling recombination processes and predicting energy conversion efficiency of dye sensitized solar cells from first principles

NASA Astrophysics Data System (ADS)

Ma, Wei; Meng, Sheng

2014-03-01

We present a set of algorithms based on solo first principles calculations, to accurately calculate key properties of a DSC device including sunlight harvest, electron injection, electron-hole recombination, and open circuit voltages. Two series of D- π-A dyes are adopted as sample dyes. The short circuit current can be predicted by calculating the dyes' photo absorption, and the electron injection and recombination lifetime using real-time time-dependent density functional theory (TDDFT) simulations. Open circuit voltage can be reproduced by calculating energy difference between the quasi-Fermi level of electrons in the semiconductor and the electrolyte redox potential, considering the influence of electron recombination. Based on timescales obtained from real time TDDFT dynamics for excited states, the estimated power conversion efficiency of DSC fits nicely with the experiment, with deviation below 1-2%. Light harvesting efficiency, incident photon-to-electron conversion efficiency and the current-voltage characteristics can also be well reproduced. The predicted efficiency can serve as either an ideal limit for optimizing photovoltaic performance of a given dye, or a virtual device that closely mimicking the performance of a real device under different experimental settings.

The Equivalent Electrokinetic Circuit Model of Ion Concentration Polarization Layer: Electrical Double Layer, Extended Space Charge and Electro-convection

NASA Astrophysics Data System (ADS)

Cho, Inhee; Huh, Keon; Kwak, Rhokyun; Lee, Hyomin; Kim, Sung Jae

2016-11-01

The first direct chronopotentiometric measurement was provided to distinguish the potential difference through the extended space charge (ESC) layer which is formed with the electrical double layer (EDL) near a perm-selective membrane. From this experimental result, the linear relationship was obtained between the resistance of ESC and the applied current density. Furthermore, we observed the step-wise distributions of relaxation time at the limiting current regime, confirming the existence of ESC capacitance other than EDL's. In addition, we proposed the equivalent electrokinetic circuit model inside ion concentration polarization (ICP) layer under rigorous consideration of EDL, ESC and electro-convection (EC). In order to elucidate the voltage configuration in chronopotentiometric measurement, the EC component was considered as the "dependent voltage source" which is serially connected to the ESC layer. This model successfully described the charging behavior of the ESC layer with or without EC, where both cases determined each relaxation time, respectively. Finally, we quantitatively verified their values utilizing the Poisson-Nernst-Planck equations. Therefore, this unified circuit model would provide a key insight of ICP system and potential energy-efficient applications.

Maximizing the short circuit current of organic solar cells by partial decoupling of electrical and optical properties

NASA Astrophysics Data System (ADS)

Qarony, Wayesh; Hossain, Mohammad I.; Jovanov, Vladislav; Knipp, Dietmar; Tsang, Yuen Hong

2018-03-01

The partial decoupling of electronic and optical properties of organic solar cells allows for realizing solar cells with increased short circuit current and energy conversion efficiency. The proposed device consists of an organic solar cell conformally prepared on the surface of an array of single and double textured pyramids. The device geometry allows for increasing the optical thickness of the organic solar cell, while the electrical thickness is equal to the nominal thickness of the solar cell. By increasing the optical thickness of the solar cell, the short circuit current is distinctly increased. The quantum efficiency and short circuit current are determined using finite-difference time-domain simulations of the 3D solar cell structure. The influence of different solar cell designs on the quantum efficiency and short circuit current is discussed and optimal device dimensions are proposed.

Atomic memory access hardware implementations

DOEpatents

Ahn, Jung Ho; Erez, Mattan; Dally, William J

2015-02-17

Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

Effect of Ground Layer Patterns with Slits on Conducted Noise Currents from Printed Circuit Board

NASA Astrophysics Data System (ADS)

Maeno, Tsuyoshi; Unou, Takanori; Ichikawa, Kouji; Fujiwara, Osamu

Electromagnetic disturbances for vehicle-mounted radios can be caused by conducted noise currents that flows out from electronic equipment for vehicles to wire-harnesses. In this paper, for reducing the conducted noise currents from electronic equipment for vehicles, we made a simulation and experiment on how ground patterns affect the noise currents from three-layer printed circuit boards (PCBs) with slit-types and plane-type ground patterns. As a result, we could confirm that slits on a ground pattern allow conducted noise currents to flow out from PCBs to wire-harnesses. For the PCBs with plane-type ground and one of three slit-type patterns, on the other hand, both the simulation and examination showed that resonance phenomena occur at unexpected low-frequencies. A circuit analysis revealed that the above phenomena can be caused by the imbalance of a bridge circuit consisting of the trace circuits on the PCB.

A Readout Integrated Circuit (ROIC) employing self-adaptive background current compensation technique for Infrared Focal Plane Array (IRFPA)

NASA Astrophysics Data System (ADS)

Zhou, Tong; Zhao, Jian; He, Yong; Jiang, Bo; Su, Yan

2018-05-01

A novel self-adaptive background current compensation circuit applied to infrared focal plane array is proposed in this paper, which can compensate the background current generated in different conditions. Designed double-threshold detection strategy is to estimate and eliminate the background currents, which could significantly reduce the hardware overhead and improve the uniformity among different pixels. In addition, the circuit is well compatible to various categories of infrared thermo-sensitive materials. The testing results of a 4 × 4 experimental chip showed that the proposed circuit achieves high precision, wide application and high intelligence. Tape-out of the 320 × 240 readout circuit, as well as the bonding, encapsulation and imaging verification of uncooled infrared focal plane array, have also been completed.

Reliability analysis of component-level redundant topologies for solid-state fault current limiter

NASA Astrophysics Data System (ADS)

Farhadi, Masoud; Abapour, Mehdi; Mohammadi-Ivatloo, Behnam

2018-04-01

Experience shows that semiconductor switches in power electronics systems are the most vulnerable components. One of the most common ways to solve this reliability challenge is component-level redundant design. There are four possible configurations for the redundant design in component level. This article presents a comparative reliability analysis between different component-level redundant designs for solid-state fault current limiter. The aim of the proposed analysis is to determine the more reliable component-level redundant configuration. The mean time to failure (MTTF) is used as the reliability parameter. Considering both fault types (open circuit and short circuit), the MTTFs of different configurations are calculated. It is demonstrated that more reliable configuration depends on the junction temperature of the semiconductor switches in the steady state. That junction temperature is a function of (i) ambient temperature, (ii) power loss of the semiconductor switch and (iii) thermal resistance of heat sink. Also, results' sensitivity to each parameter is investigated. The results show that in different conditions, various configurations have higher reliability. The experimental results are presented to clarify the theory and feasibility of the proposed approaches. At last, levelised costs of different configurations are analysed for a fair comparison.

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Qiao, Da-Yong; Yuan, Wei-Zheng; Gao, Peng; Yao, Xian-Wang; Zang, Bo; Zhang, Lin; Guo, Hui; Zhang, Hong-Jian

2008-10-01

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

Designing a 25-kilowatt high frequency series resonant

NASA Technical Reports Server (NTRS)

Robson, R. R.

1984-01-01

The feasibility of processing 25 kW of power with a single, transistorized, 20 kHz, series resonant converter stage has been demonstrated by the successful design, development, fabrication, and testing of such a device. It employs four Westinghouse D7ST transistors in a full-bridge configuration and operates from a 250-to-350-Vdc input bus. The unit has an overall worst-case efficiency of 93.5% at its full rated output of 1000 V and 25 A dc. A solid-state dc input circuit breaker and output-transient-current limiters are included in and integrated into the design. Circuit details of the converter are presented along with test data.

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, Joseph H.; Mikesell, Harvey E.; Jha, Kamal N.

1998-01-01

A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

Full circuit calculation for electromagnetic pulse transmission in a high current facility

NASA Astrophysics Data System (ADS)

Zou, Wenkang; Guo, Fan; Chen, Lin; Song, Shengyi; Wang, Meng; Xie, Weiping; Deng, Jianjun

2014-11-01

We describe herein for the first time a full circuit model for electromagnetic pulse transmission in the Primary Test Stand (PTS)—the first TW class pulsed power driver in China. The PTS is designed to generate 8-10 MA current into a z -pinch load in nearly 90 ns rise time for inertial confinement fusion and other high energy density physics research. The PTS facility has four conical magnetic insulation transmission lines, in which electron current loss exists during the establishment of magnetic insulation. At the same time, equivalent resistance of switches and equivalent inductance of pinch changes with time. However, none of these models are included in a commercially developed circuit code so far. Therefore, in order to characterize the electromagnetic transmission process in the PTS, a full circuit model, in which switch resistance, magnetic insulation transmission line current loss and a time-dependent load can be taken into account, was developed. Circuit topology and an equivalent circuit model of the facility were introduced. Pulse transmission calculation of shot 0057 was demonstrated with the corresponding code FAST (full-circuit analysis and simulation tool) by setting controllable parameters the same as in the experiment. Preliminary full circuit simulation results for electromagnetic pulse transmission to the load are presented. Although divergences exist between calculated and experimentally obtained waveforms before the vacuum section, consistency with load current is satisfactory, especially at the rising edge.

42 CFR 84.97 - Test for carbon dioxide in inspired gas; open- and closed-circuit apparatus; maximum allowable...

Code of Federal Regulations, 2010 CFR

2010-10-01

... closed-circuit apparatus; maximum allowable limits. 84.97 Section 84.97 Public Health PUBLIC HEALTH... ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Self-Contained Breathing Apparatus § 84.97 Test for carbon dioxide in inspired gas; open- and closed-circuit apparatus; maximum allowable limits. (a) Open...

42 CFR 84.97 - Test for carbon dioxide in inspired gas; open- and closed-circuit apparatus; maximum allowable...

Code of Federal Regulations, 2011 CFR

2011-10-01

... closed-circuit apparatus; maximum allowable limits. 84.97 Section 84.97 Public Health PUBLIC HEALTH... ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Self-Contained Breathing Apparatus § 84.97 Test for carbon dioxide in inspired gas; open- and closed-circuit apparatus; maximum allowable limits. (a) Open...

Wide-temperature integrated operational amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

2009-01-01

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

The persistent current and energy spectrum on a driven mesoscopic LC-circuit with Josephson junction

NASA Astrophysics Data System (ADS)

Pahlavanias, Hassan

2018-03-01

The quantum theory for a mesoscopic electric circuit including a Josephson junction with charge discreteness is studied. By considering coupling energy of the mesoscopic capacitor in Josephson junction device, a Hamiltonian describing the dynamics of a quantum mesoscopic electric LC-circuit with charge discreteness is introduced. We first calculate the persistent current on a quantum driven ring including Josephson junction. Then we obtain the persistent current and energy spectrum of a quantum mesoscopic electrical circuit which includes capacitor, inductor, time-dependent external source and Josephson junction.

Circuit-level optimisation of a:Si TFT-based AMOLED pixel circuits for maximum hold current

NASA Astrophysics Data System (ADS)

Foroughi, Aidin; Mehrpoo, Mohammadreza; Ashtiani, Shahin J.

2013-11-01

Design of AMOLED pixel circuits has manifold constraints and trade-offs which provides incentive for circuit designers to seek optimal solutions for different objectives. In this article, we present a discussion on the viability of an optimal solution to achieve the maximum hold current. A compact formula for component sizing in a conventional 2T1C pixel is, therefore, derived. Compared to SPICE simulation results, for several pixel sizes, our predicted optimum sizing yields maximum currents with errors less than 0.4%.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Electronic system for high power load control. [solar arrays

NASA Technical Reports Server (NTRS)

Miller, E. L. (Inventor)

1980-01-01

Parallel current paths are divided into two groups, with control devices in the current paths of one group each having a current limiting resistor, and the control devices in the other group each having no limiting resistor, so that when the control devices of the second group are turned fully on, a short circuit is achieved by the arrangement of parallel current paths. Separate but coordinated control signals are provided to turn on the control devices of the first group and increase their conduction toward saturation as a function of control input, and when fully on, or shortly before, to turn on the control devices of the second group and increase their conduction toward saturation as a function of the control input as that input continues to increase. Electronic means may be used to generate signals. The system may be used for 1-V characteristic measurements of solar arrays as well as for other load control purposes.

Joule-Thief Circuit Performance for Electricity Energy Saving of Emergency Lamps

NASA Astrophysics Data System (ADS)

Nuryanto Budisusila, Eka; Arifin, Bustanul

2017-04-01

The alternative energy such as battery as power source is required as energy source failures. The other need is outdoor lighting. The electrical power source is expected to be a power saving, optimum and has long life operating. The Joule-Thief circuit is one of solution method for energy saving by using raised electromagnetic force on cored coil when there is back-current. This circuit has a transistor operated as a switch to cut voltage and current flowing along the coils. The present of current causing magnetic induction and generates energy. Experimental prototype was designed by using battery 1.5V to activate Light Emitting Diode or LED as load. The LED was connected in parallel or serial circuit configuration. The result show that the joule-thief circuit able to supply LED circuits up to 40 LEDs.

Low Insertion HVDC Circuit Breaker: Magnetically Pulsed Hybrid Breaker for HVDC Power Distribution Protection

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2012-01-09

GENI Project: General Atomics is developing a direct current (DC) circuit breaker that could protect the grid from faults 100 times faster than its alternating current (AC) counterparts. Circuit breakers are critical elements in any electrical system. At the grid level, their main function is to isolate parts of the grid where a fault has occurred—such as a downed power line or a transformer explosion—from the rest of the system. DC circuit breakers must interrupt the system during a fault much faster than AC circuit breakers to prevent possible damage to cables, converters and other grid-level components. General Atomics’ high-voltagemore » DC circuit breaker would react in less than 1/1,000th of a second to interrupt current during a fault, preventing potential hazards to people and equipment.« less

Plasma Radiation Source on the Basis of the Gas Puff with Outer Plasma Shell in the Circuit of a Mega-Ampere Load Current Doubler

NASA Astrophysics Data System (ADS)

Kokshenev, V. A.; Labetsky, A. Yu.; Shishlov, A. V.; Kurmaev, N. E.; Fursov, F. I.; Cherdizov, R. K.

2017-12-01

Characteristics of Z-pinch plasma radiation in the form of a double shell neon gas puff with outer plasma shell are investigated in the microsecond implosion mode. Experiments are performed using a GIT-12 mega-joule generator with load current doubler having a ferromagnetic core at implosion currents up to 5 MA. Conditions for matching of the nonlinear load with the mega-ampere current multiplier circuit are determined. The load parameters (plasma shell characteristics and mass and geometry of gas puff shells) are optimized on the energy supplied to the gas puff and n energy characteristics of radiation. It is established that the best modes of K-shell radiation in neon are realized for such radial distribution of the gas-puff material at which the compression velocity of the shell is close to a constant and amounts to 27-30 cm/μs. In these modes, up to 40% of energy supplied to the gas puff is converted into K-shell radiation. The reasons limiting the efficiency of the radiation source with increasing implosion current are analyzed. A modernized version of the energy supply from the current doubler to the Z-pinch is proposed.

Negative inductance circuits for metamaterial bandwidth enhancement

NASA Astrophysics Data System (ADS)

Avignon-Meseldzija, Emilie; Lepetit, Thomas; Ferreira, Pietro Maris; Boust, Fabrice

2017-12-01

Passive metamaterials have yet to be translated into applications on a large scale due in large part to their limited bandwidth. To overcome this limitation many authors have suggested coupling metamaterials to non-Foster circuits. However, up to now, the number of convincing demonstrations based on non-Foster metamaterials has been very limited. This paper intends to clarify why progress has been so slow, i.e., the fundamental difficulty in making a truly broadband and efficient non-Foster metamaterial. To this end, we consider two families of metamaterials, namely Artificial Magnetic Media and Artificial Magnetic Conductors. In both cases, it turns out that bandwidth enhancement requires negative inductance with almost zero resistance. To estimate bandwidth enhancement with actual non-Foster circuits, we consider two classes of such circuits, namely Linvill and gyrator. The issue of stability being critical, both metamaterial families are studied with equivalent circuits that include advanced models of these non-Foster circuits. Conclusions are different for Artificial Magnetic Media coupled to Linvill circuits and Artificial Magnetic Conductors coupled to gyrator circuits. In the first case, requirements for bandwidth enhancement and stability are very hard to meet simultaneously whereas, in the second case, an adjustment of the transistor gain does significantly increase bandwidth.

Power electronics for low power arcjets

NASA Technical Reports Server (NTRS)

Hamley, John A.; Hill, Gerald M.

1991-01-01

In anticipation of the needs of future light-weight, low-power spacecraft, arcjet power electronics in the 100 to 400 W operating range were developed. Limited spacecraft power and thermal control capacity of these small spacecraft emphasized the need for high efficiency. Power topologies similar to those in the higher 2 kW and 5 to 30 kW power range were implemented, including a four transistor bridge switching circuit, current mode pulse-width modulated control, and an output current averaging inductor with an integral pulse generation winding. Reduction of switching transients was accomplished using a low inductance power distribution network, and no passive snubber circuits were necessary for power switch protection. Phase shift control of the power bridge was accomplished using an improved pulse width modulation to phase shift converter circuit. These features, along with conservative magnetics designs allowed power conversion efficiencies of greater than 92.5 percent to be achieved into resistive loads over the entire operating range of the converter. Electromagnetic compatibility requirements were not considered in this work, and control power for the converter was derived from AC mains. Addition of input filters and control power converters would result in an efficiency of on the order of 90 percent for a flight unit. Due to the developmental nature of arcjet systems at this power level, the exact nature of the thruster/power processor interface was not quantified. Output regulation and current ripple requirements of 1 and 20 percent respectively, as well as starting techniques, were derived from the characteristics of the 2 kW system but an open circuit voltage in excess of 175 V was specified. Arcjet integration tests were performed, resulting in successful starts and stable arcjet operation at power levels as low as 240 W with simulated hydrazine propellants.

A Design Methodology for Optoelectronic VLSI

DTIC Science & Technology

2007-01-01

current gets converted to a CMOS voltage level through a transimpedance amplifier circuit called a receiver. The output of the receiver is then...change the current flowing from the diode to a voltage that the logic inputs can use. That circuit is called a receiver. It is a transimpedance amplifier ...incorpo- rate random access memory circuits, SRAM or dynamic RAM (DRAM). These circuits use weak internal analog signals that are amplified by sense

[Design of High Frequency Signal Detecting Circuit of Human Body Impedance Used for Ultrashort Wave Diathermy Apparatus].

PubMed

Fan, Xu; Wang, Yunguang; Cheng, Haiping; Chong, Xiaochen

2016-02-01

The present circuit was designed to apply to human tissue impedance tuning and matching device in ultra-short wave treatment equipment. In order to judge if the optimum status of circuit parameter between energy emitter circuit and accepter circuit is in well syntony, we designed a high frequency envelope detect circuit to coordinate with automatic adjust device of accepter circuit, which would achieve the function of human tissue impedance matching and tuning. Using the sampling coil to receive the signal of amplitude-modulated wave, we compared the voltage signal of envelope detect circuit with electric current of energy emitter circuit. The result of experimental study was that the signal, which was transformed by the envelope detect circuit, was stable and could be recognized by low speed Analog to Digital Converter (ADC) and was proportional to the electric current signal of energy emitter circuit. It could be concluded that the voltage, transformed by envelope detect circuit can mirror the real circuit state of syntony and realize the function of human tissue impedance collecting.

Development, Integration and Testing of Automated Triggering Circuit for Hybrid DC Circuit Breaker

NASA Astrophysics Data System (ADS)

Kanabar, Deven; Roy, Swati; Dodiya, Chiragkumar; Pradhan, Subrata

2017-04-01

A novel concept of Hybrid DC circuit breaker having combination of mechanical switch and static switch provides arc-less current commutation into the dump resistor during quench in superconducting magnet operation. The triggering of mechanical and static switches in Hybrid DC breaker can be automatized which can effectively reduce the overall current commutation time of hybrid DC circuit breaker and make the operation independent of opening time of mechanical switch. With this view, a dedicated control circuit (auto-triggering circuit) has been developed which can decide the timing and pulse duration for mechanical switch as well as static switch from the operating parameters. This circuit has been tested with dummy parameters and thereafter integrated with the actual test set up of hybrid DC circuit breaker. This paper deals with the conceptual design of the auto-triggering circuit, its control logic and operation. The test results of Hybrid DC circuit breaker using this circuit have also been discussed.

Trielectrode capacitive pressure transducer

NASA Technical Reports Server (NTRS)

Coon, G. W. (Inventor)

1976-01-01

A capacitive transducer and circuit especially suited for making measurements in a high-temperature environment are described. The transducer includes two capacitive electrodes and a shield electrode. As the temperature of the transducer rises, the resistance of the insulation between the capacitive electrode decreases and a resistive current attempts to interfere with the capacitive current between the capacitive electrodes. The shield electrode and the circuit coupled there reduce the resistive current in the transducer. A bridge-type circuit coupled to the transducer ignores the resistive current and measures only the capacitive current flowing between the capacitive electrodes.

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

1998-08-11

A device and a method are disclosed for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens. 7 figs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stolterfoht, Martin; Armin, Ardalan; Pandey, Ajay K.

Photovoltaic performance in relation to charge transport is studied in efficient (7.6%) organic solar cells (PTB7:PC{sub 71}BM). Both electron and hole mobilities are experimentally measured in efficient solar cells using the resistance dependent photovoltage technique, while the inapplicability of classical techniques, such as space charge limited current and photogenerated charge extraction by linearly increasing voltage is discussed. Limits in the short-circuit current originate from optical losses, while charge transport is shown not to be a limiting process. Efficient charge extraction without recombination can be achieved with a mobility of charge carriers much lower than previously expected. The presence of dispersivemore » transport with strongly distributed mobilities in high efficiency solar cells is demonstrated. Reduced non-Langevin recombination is shown to be beneficial for solar cells with imbalanced, low, and dispersive electron and hole mobilities.« less

Low-power integrated-circuit driver for ferrite-memory word lines

NASA Technical Reports Server (NTRS)

Katz, S.

1970-01-01

Composite circuit uses both n-p-n bipolar and p-channel MOS transistors /BIMOS/. The BIMOS driver provides 1/ ease of integrated circuit construction, 2/ low standby power consumption, 3/ bidirectional current pulses, and 4/ current-pulse amplitudes and rise times independent of active device parameters.

Simple evaporation controller for thin-film deposition from a resistively heated boat

NASA Technical Reports Server (NTRS)

Scofield, John H.; Bajuk, Lou; Mohler, William

1990-01-01

A simple, inexpensive circuit is described for switching the current through a resistively heated evaporation boat during thin-film deposition. The circuit uses a silicon-controlled rectifier (SCR) to switch the 0-15-A current in the primary of a 2-kV A step-down transformer that supplies the 0-200-A current to an evaporation boat. The circuit is controlled by a 0-10 V-dc signal similar to that furnished by an Inficon XTC deposition-rate controller. This circuit may be assembled from a handful of parts for a cost of about $400, nearly one-tenth the cost of similar commercial units. Minimum construction is required, since the circuit is built around an off-the-shelf, self-contained SCR unit.

62. VIEW LOOKING NORTHWEST AT THE OIL FILLED CIRCUIT BREAKER ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

62. VIEW LOOKING NORTHWEST AT THE OIL FILLED CIRCUIT BREAKER FOR GENERATOR NUMBER 1. CIRCUIT BREAKERS ARE AUTOMATED SWITCHES WHICH DISCONNECT THE GENERATORS FROM THE LINE WHEN SHORT CIRCUITS OCCUR. WHEN CIRCUITS INVOLVING HIGH CURRENTS AND VOLTAGES ARE BROKEN, THE AIR SURROUNDING MECHANICAL PARTS OF THE SWITCH BECOMES IONIZED AND CONTINUES TO CONDUCT ELECTRIC POWER ACROSS ANY GAP IN THE SWITCH CONTACTS. TO PREVENT THIS AND INSURE A POSITIVE INTERRUPTION OF CURRENT, THE SWITCH CONTACTS ARE IMMERSED IN A CONTAINER OF OIL. THE OIL DOES NOT SUPPORT THE FORMATION OF AN ARC AND EFFECTIVELY CUTS OFF THE CURRENT WHEN THE SWITCH CONTACTS ARE OPENED. - New York, New Haven & Hartford Railroad, Cos Cob Power Plant, Sound Shore Drive, Greenwich, Fairfield County, CT

Converging on a core cognitive deficit: the impact of various neurodevelopmental insults on cognitive control

PubMed Central

O'Reilly, Kally C.; Kao, Hsin-Yi; Lee, Heekyung; Fenton, André A.

2014-01-01

Despite substantial effort and immense need, the treatment options for major neuropsychiatric illnesses like schizophrenia are limited and largely ineffective at improving the most debilitating cognitive symptoms that are central to mental illness. These symptoms include cognitive control deficits, the inability to selectively use information that is currently relevant and ignore what is currently irrelevant. Contemporary attempts to accelerate progress are in part founded on an effort to reconceptualize neuropsychiatric illness as a disorder of neural development. This neuro-developmental framework emphasizes abnormal neural circuits on the one hand, and on the other, it suggests there are therapeutic opportunities to exploit the developmental processes of excitatory neuron pruning, inhibitory neuron proliferation, elaboration of myelination, and other circuit refinements that extend through adolescence and into early adulthood. We have crafted a preclinical research program aimed at cognition failures that may be relevant to mental illness. By working with a variety of neurodevelopmental rodent models, we strive to identify a common pathophysiology that underlies cognitive control failure as well as a common strategy for improving cognition in the face of neural circuit abnormalities. Here we review our work to characterize cognitive control deficits in rats with a neonatal ventral hippocampus lesion and rats that were exposed to Methylazoxymethanol acetate (MAM) in utero. We review our findings as they pertain to early developmental processes, including neurogenesis, as well as the power of cognitive experience to refine neural circuit function within the mature and maturing brain's cognitive circuitry. PMID:24966811

Artificial Neural Network with Hardware Training and Hardware Refresh

NASA Technical Reports Server (NTRS)

Duong, Tuan A. (Inventor)

2003-01-01

A neural network circuit is provided having a plurality of circuits capable of charge storage. Also provided is a plurality of circuits each coupled to at least one of the plurality of charge storage circuits and constructed to generate an output in accordance with a neuron transfer function. Each of a plurality of circuits is coupled to one of the plurality of neuron transfer function circuits and constructed to generate a derivative of the output. A weight update circuit updates the charge storage circuits based upon output from the plurality of transfer function circuits and output from the plurality of derivative circuits. In preferred embodiments, separate training and validation networks share the same set of charge storage circuits and may operate concurrently. The validation network has a separate transfer function circuits each being coupled to the charge storage circuits so as to replicate the training network s coupling of the plurality of charge storage to the plurality of transfer function circuits. The plurality of transfer function circuits may be constructed each having a transconductance amplifier providing differential currents combined to provide an output in accordance with a transfer function. The derivative circuits may have a circuit constructed to generate a biased differential currents combined so as to provide the derivative of the transfer function.

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2007-01-01

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).

A novel 3-TFT voltage driving method of compensating V TH shift for a-Si:H TFT and OLED degradation for AMOLED

NASA Astrophysics Data System (ADS)

Lin, Chih-Lung; Chou, Kuan-Wen; Chang, Fu-Chieh; Hung, Chia-Che

2011-10-01

This work demonstrates the feasibility of a novel pixel circuit by using three a-Si:H TFTs. The proposed circuit can stabilize the OLED current and provide an additional driving current to ameliorate the brightness degradation of the AMOLED. Measurement results indicate that the current degradation of the proposed circuit, caused by V TH variations, is less than 5% over more than 50,000 s at 60 °C, whereas that of a conventional 2T1C pixel circuit is larger than 34%. Furthermore, to ameliorate the decrease in luminance owing to the OLED degradation, the OLED current can be increased by 10% by analyzing the current degradation and modulating the detected voltage appropriately.

Time-resolved photoinduced thermoelectric and transport currents in GaAs nanowires.

PubMed

Prechtel, Leonhard; Padilla, Milan; Erhard, Nadine; Karl, Helmut; Abstreiter, Gerhard; Fontcuberta I Morral, Anna; Holleitner, Alexander W

2012-05-09

In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in single GaAs nanowire based circuits, we introduce an on-chip photocurrent pump-probe spectroscopy with a picosecond time resolution. We identify photoinduced thermoelectric, displacement, and carrier lifetime limited currents as well as the transport of photogenerated holes to the electrodes. Moreover, we show that the time-resolved photocurrent spectroscopy can be used to investigate the drift velocity of photogenerated carriers in semiconducting nanowires. Hereby, our results are relevant for nanowire-based optoelectronic and photovoltaic applications.

A low power, on demand electrothermal valve for wireless drug delivery applications

PubMed Central

Li, Po-Ying; Givrad, Tina K.; Sheybani, Roya; Holschneider, Daniel P.; Maarek, Jean-Michel I.

2014-01-01

We present a low power, on demand Parylene MEMS electrothermal valve. A novel Ω-shaped thermal resistive element requires low power (~mW) and enables rapid valve opening (~ms). Using both finite element analysis and valve opening experiments, a robust resistive element design for improved valve opening performance in water was obtained. In addition, a thermistor, as an inrush current limiter, was added into the valve circuit to provide variable current ramping. Wireless activation of the valve using RF inductive power transfer was demonstrated. PMID:20024057

Ground and CHAMP observations of field-aligned current circuits generated by lower atmospheric disturbances and expectations to the SWARM to clarify their three dimensional structure

NASA Astrophysics Data System (ADS)

Iyemori, Toshihiko; Nakanishi, Kunihito; Aoyama, Tadashi; Lühr, Hermann

2014-05-01

Acoustic gravity waves propagated to the ionosphere cause dynamo currents in the ionosphere. They divert along geomagnetic field lines of force to another hemisphere accompanying electric field and then flow in the ionosphere of another hemisphere by the electric field forming closed current circuits. The oscillating current circuits with the period of acoustic waves generate magnetic variations on the ground, and they are observed as long period geomagnetic pulsations. This effect has been detected during big earthquakes, strong typhoons, tornados etc. On a low-altitude satellite orbit, the spatial distribution (i.e., structure) of the current circuits along the satellite orbit should be detected as temporal magnetic oscillations, and the effect is confirmed by a CHAMP data analysis. On the spatial structure, in particular, in the longitudinal direction, it has been difficult to examine by a single satellite or from ground magnetic observations. The SWARM satellites will provide an unique opportunity to clarify the three dimensional structure of the field-aligned current circuits.

Students conception and perception of simple electrical circuit

NASA Astrophysics Data System (ADS)

Setyani, ND; Suparmi; Sarwanto; Handhika, J.

2017-11-01

This research aims to describe the profile of the students’ conception and perception on the simple electrical circuit. The results of this research suppose to be used as a reference by teachers to use learning models or strategies to improve understanding the physics concept. The research method used is descriptive qualitative. Research subjects are the students of physics education program, Universitas Sebelas Maret, Surakarta, Indonesia (49 students). The results showed that students have alternative conceptions. Their conceptions are (1) a high-voltage wire has an electric current and can cause electric shock, (2) the potential difference and the value of resistance used in a circuit is influenced by electric current, (3) the value of resistance of a lamp is proportional to the filament thickness, (4) the amount of electric current that coming out from the positive pole battery is the same for all type of circuit, in series or parallel (battery is constant current sources), (5) the current at any resistor in the series circuit is influenced by the resistor used, (6) the resistor consume the current through it. This incorrect conception can cause misconceptions.

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2016-02-01

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

2002-01-01

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Switching-type regulator circuit has increased efficiency

NASA Technical Reports Server (NTRS)

Clapp, W. M.

1967-01-01

Switching series regulator circuit uses an inductive network to feed most of the current applied to the control circuit to the load. This circuit eliminates resistive losses and the need for heat sinks.

Current interruption in inductive storage systems with inertial current source

NASA Astrophysics Data System (ADS)

Vitkovitsky, I. M.; Conte, D.; Ford, R. D.; Lupton, W. H.

1980-03-01

Utilization of inertial current source inductive storage with high power output requires a switch with short opening time. This switch must operate as a circuit breaker, i.e., be capable to carry the current for a time period characteristic of inertial systems, such as homopolar generators. For reasonable efficiency, its opening time must be fast to minimize the energy dissipated in downstream fuse stages required for any additional pulse compression. A switch that satisfies these criteria, as well as other requirements such as that for high voltage operation associated with high power output, is an explosively driven switch consisting of large number of gaps arranged in series. The performance of this switch in limiting and/or interrupting currents produced by large generators has been studied. Single switch modules were designed and tested for limiting the commutating current output of 1 MW, 60 Hz, generator and 500 KJ capacitor banks. Current limiting and commutation were evaluated, using these sources, for currents ranging up to 0.4 MA. The explosive opening of the switch was found to provide an effective first stage for further pulse compression. It opens in tens of microseconds, commutates current at high efficiency ( = 905) recovers very rapidly over a wide range of operating conditions.

Studies of silicon pn junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1977-01-01

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Low-Loss NbTiN Films for THz SIS Mixer Tuning Circuits

NASA Technical Reports Server (NTRS)

Kooi, J. W.; Stern, J. A.; Chattopadhyay, G.; LeDuc, H. G.; Bumble, B.; Zmuidzinas, J.

1998-01-01

Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride has long been considered a good candidate material, but typical NbN films suffer from high RF loss. To circumvent this problem we are currently investigating the RF loss in NbTiN films, a 15 K Tc compound superconductor, by incorporating them into quasi-optical slot antenna SIS devices.

Effect of Joule heating and current crowding on electromigration in mobile technology

NASA Astrophysics Data System (ADS)

Tu, K. N.; Liu, Yingxia; Li, Menglu

2017-03-01

In the present era of big data and internet of things, the use of microelectronic products in all aspects of our life is manifested by the ubiquitous presence of mobile devices as i-phones and wearable i-products. These devices are facing the need for higher power and greater functionality applications such as in i-health, yet they are limited by physical size. At the moment, software (Apps) is much ahead of hardware in mobile technology. To advance hardware, the end of Moore's law in two-dimensional integrated circuits can be extended by three-dimensional integrated circuits (3D ICs). The concept of 3D ICs has been with us for more than ten years. The challenge in 3D IC technology is dense packing by using both vertical and horizontal interconnections. Mass production of 3D IC devices is behind schedule due to cost because of low yield and uncertain reliability. Joule heating is serious in a dense structure because of heat generation and dissipation. A change of reliability paradigm has advanced from failure at a specific circuit component to failure at a system level weak-link. Currently, the electronic industry is introducing 3D IC devices in mainframe computers, where cost is not an issue, for the purpose of collecting field data of failure, especially the effect of Joule heating and current crowding on electromigration. This review will concentrate on the positive feedback between Joule heating and electromigration, resulting in an accelerated system level weak-link failure. A new driving force of electromigration, the electric potential gradient force due to current crowding, will be reviewed critically. The induced failure tends to occur in the low current density region.

Thermally oxidized titania nanotubes enhance the corrosion resistance of Ti6Al4V.

PubMed

Grotberg, John; Hamlekhan, Azhang; Butt, Arman; Patel, Sweetu; Royhman, Dmitry; Shokuhfar, Tolou; Sukotjo, Cortino; Takoudis, Christos; Mathew, Mathew T

2016-02-01

The negative impact of in vivo corrosion of metallic biomedical implants remains a complex problem in the medical field. We aimed to determine the effects of electrochemical anodization (60V, 2h) and thermal oxidation (600°C) on the corrosive behavior of Ti-6Al-4V, with serum proteins, at physiological temperature. Anodization produced a mixture of anatase and amorphous TiO2 nanopores and nanotubes, while the annealing process yielded an anatase/rutile mixture of TiO2 nanopores and nanotubes. The surface area was analyzed by the Brunauer-Emmett-Teller method and was estimated to be 3 orders of magnitude higher than that of polished control samples. Corrosion resistance was evaluated on the parameters of open circuit potential, corrosion potential, corrosion current density, passivation current density, polarization resistance and equivalent circuit modeling. Samples both anodized and thermally oxidized exhibited shifts of open circuit potential and corrosion potential in the noble direction, indicating a more stable nanoporous/nanotube layer, as well as lower corrosion current densities and passivation current densities than the smooth control. They also showed increased polarization resistance and diffusion limited charge transfer within the bulk oxide layer. The treatment groups studied can be ordered from greatest corrosion resistance to least as Anodized+Thermally Oxidized > Anodized > Smooth > Thermally Oxidized for the conditions investigated. This study concludes that anodized surface has a potential to prevent long term implant failure due to corrosion in a complex in-vivo environment. Copyright © 2015 Elsevier B.V. All rights reserved.

Versatile tunable current-mode universal biquadratic filter using MO-DVCCs and MOSFET-based electronic resistors.

PubMed

Chen, Hua-Pin

2014-01-01

This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

Versatile Tunable Current-Mode Universal Biquadratic Filter Using MO-DVCCs and MOSFET-Based Electronic Resistors

PubMed Central

2014-01-01

This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design. PMID:24982963

Resonant Tunneling Analog-To-Digital Converter

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Seabaugh, A. C.; Hellums, J.; Taddiken, A.; Tang, H.; Teng, J.; vanderWagt, J. P. A.

1995-01-01

As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplifiedmore » in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.« less

49 CFR 236.2 - Grounds.

Code of Federal Regulations, 2014 CFR

2014-10-01

..., single-break, signal control circuits using a grounded common, and alternating current power distribution...) Alternating current power distribution circuits that are grounded in the interest of safety. ...

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

PubMed

Chani, Muhammad Tariq Saeed; Karimov, Kh S; Asiri, Abdullah M; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

PubMed Central

Chani, Muhammad Tariq Saeed; Karimov, Kh. S.; Asiri, Abdullah M.; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results. PMID:24748375

Logarithmic current measurement circuit with improved accuracy and temperature stability and associated method

DOEpatents

Ericson, M. Nance; Rochelle, James M.

1994-01-01

A logarithmic current measurement circuit for operating upon an input electric signal utilizes a quad, dielectrically isolated, well-matched, monolithic bipolar transistor array. One group of circuit components within the circuit cooperate with two transistors of the array to convert the input signal logarithmically to provide a first output signal which is temperature-dependant, and another group of circuit components cooperate with the other two transistors of the array to provide a second output signal which is temperature-dependant. A divider ratios the first and second output signals to provide a resultant output signal which is independent of temperature. The method of the invention includes the operating steps performed by the measurement circuit.

Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

NASA Astrophysics Data System (ADS)

Sahoo, G. S.; Mishra, G. P.

2018-01-01

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III-V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (JSC), open-circuit voltage (VOC), fill factor (FF) and conversion efficiency (η) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

Magnetic force microscopy method and apparatus to detect and image currents in integrated circuits

DOEpatents

Campbell, Ann. N.; Anderson, Richard E.; Cole, Jr., Edward I.

1995-01-01

A magnetic force microscopy method and improved magnetic tip for detecting and quantifying internal magnetic fields resulting from current of integrated circuits. Detection of the current is used for failure analysis, design verification, and model validation. The interaction of the current on the integrated chip with a magnetic field can be detected using a cantilevered magnetic tip. Enhanced sensitivity for both ac and dc current and voltage detection is achieved with voltage by an ac coupling or a heterodyne technique. The techniques can be used to extract information from analog circuits.

Magnetic force microscopy method and apparatus to detect and image currents in integrated circuits

DOEpatents

Campbell, A.N.; Anderson, R.E.; Cole, E.I. Jr.

1995-11-07

A magnetic force microscopy method and improved magnetic tip for detecting and quantifying internal magnetic fields resulting from current of integrated circuits are disclosed. Detection of the current is used for failure analysis, design verification, and model validation. The interaction of the current on the integrated chip with a magnetic field can be detected using a cantilevered magnetic tip. Enhanced sensitivity for both ac and dc current and voltage detection is achieved with voltage by an ac coupling or a heterodyne technique. The techniques can be used to extract information from analog circuits. 17 figs.

30 CFR 75.902-1 - Maximum voltage ground check circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Maximum voltage ground check circuits. 75.902-1... Alternating Current Circuits § 75.902-1 Maximum voltage ground check circuits. The maximum voltage used for such ground check circuits shall not exceed 40 volts. ...

30 CFR 75.902-1 - Maximum voltage ground check circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Maximum voltage ground check circuits. 75.902-1... Alternating Current Circuits § 75.902-1 Maximum voltage ground check circuits. The maximum voltage used for such ground check circuits shall not exceed 40 volts. ...

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor); Ashtiani, Cyrus N. (Inventor)

2008-01-01

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

Low power electromagnetic flowmeter providing accurate zero set

NASA Technical Reports Server (NTRS)

Fryer, T. B. (Inventor)

1971-01-01

A low power, small size electromagnetic flowmeter system is described which produces a zero output signal for zero flow. The system comprises an air core type electromagnetic flow transducer, a field current supply circuit for the transducer coils and a pre-amplifier and demodulation circuit connected to the output of the transducer. To prevent spurious signals at zero flow, separate, isolated power supplies are provided for the two circuits. The demodulator includes a pair of synchronous rectifiers which are controlled by signals from the field current supply circuit. Pulse transformer connected in front of the synchronous rectifiers provide isolation between the two circuits.

Analysis of electrical properties of heterojunction based on ZnIn2Se4

NASA Astrophysics Data System (ADS)

Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

2017-04-01

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

Test Report - Fault Current Through Graphite Filament Reinforced Plastic

NASA Technical Reports Server (NTRS)

Evans, R. W.

1997-01-01

Tests were performed to determine the damage to samples of composite material when a current carrying wire is shorted to the surface of the composite material, and to determine whether enough current can flow through the material to blow a fuse before damage can occur. Fault current tests were performed on samples of graphite epoxy materials. Samples consisted of six layers of IM7 graphite fiber mat in Hercules 8552 epoxy resin. A variable power supply provided up to 35 amps of current. The high voltage side of the power supply was attached to a wire at the end of a hinged arm, and the low side was attached to the edge of the sample. To test joints, the return was connected to the edge of one sample, and the high side was shorted to the top of the other sample. Tests show that when current exceeds approximately 5 amps, the graphite glows, and the epoxy melts out at the shorted contact. At higher current levels the epoxy burns. At voltages above 15 volts the epoxy outer coat is easily broken, and fire, flame, and a rise in current occur suddenly. When joints are introduced, resistance is increased, and the maximum current resulting from a short circuit to the graphite epoxy is reduced. This condition can easily result in fault current lower than the circuit breaker limit and higher than the 5 amp ignition level. The shorting contact and the joint become hot spots with melting epoxy, smoke, and fire.

Resolving photon number states in a superconducting circuit.

PubMed

Schuster, D I; Houck, A A; Schreier, J A; Wallraff, A; Gambetta, J M; Blais, A; Frunzio, L; Majer, J; Johnson, B; Devoret, M H; Girvin, S M; Schoelkopf, R J

2007-02-01

Electromagnetic signals are always composed of photons, although in the circuit domain those signals are carried as voltages and currents on wires, and the discreteness of the photon's energy is usually not evident. However, by coupling a superconducting quantum bit (qubit) to signals on a microwave transmission line, it is possible to construct an integrated circuit in which the presence or absence of even a single photon can have a dramatic effect. Such a system can be described by circuit quantum electrodynamics (QED)-the circuit equivalent of cavity QED, where photons interact with atoms or quantum dots. Previously, circuit QED devices were shown to reach the resonant strong coupling regime, where a single qubit could absorb and re-emit a single photon many times. Here we report a circuit QED experiment in the strong dispersive limit, a new regime where a single photon has a large effect on the qubit without ever being absorbed. The hallmark of this strong dispersive regime is that the qubit transition energy can be resolved into a separate spectral line for each photon number state of the microwave field. The strength of each line is a measure of the probability of finding the corresponding photon number in the cavity. This effect is used to distinguish between coherent and thermal fields, and could be used to create a photon statistics analyser. As no photons are absorbed by this process, it should be possible to generate non-classical states of light by measurement and perform qubit-photon conditional logic, the basis of a logic bus for a quantum computer.

Modeling integrated photovoltaic–electrochemical devices using steady-state equivalent circuits

PubMed Central

Winkler, Mark T.; Cox, Casandra R.; Nocera, Daniel G.; Buonassisi, Tonio

2013-01-01

We describe a framework for efficiently coupling the power output of a series-connected string of single-band-gap solar cells to an electrochemical process that produces storable fuels. We identify the fundamental efficiency limitations that arise from using solar cells with a single band gap, an arrangement that describes the use of currently economic solar cell technologies such as Si or CdTe. Steady-state equivalent circuit analysis permits modeling of practical systems. For the water-splitting reaction, modeling defines parameters that enable a solar-to-fuels efficiency exceeding 18% using laboratory GaAs cells and 16% using all earth-abundant components, including commercial Si solar cells and Co- or Ni-based oxygen evolving catalysts. Circuit analysis also provides a predictive tool: given the performance of the separate photovoltaic and electrochemical systems, the behavior of the coupled photovoltaic–electrochemical system can be anticipated. This predictive utility is demonstrated in the case of water oxidation at the surface of a Si solar cell, using a Co–borate catalyst.

A Practical Study of the 66kV Fault Current Limiter (FCL) System with Rectifier

NASA Astrophysics Data System (ADS)

Tokuda, Noriaki; Matsubara, Yoshio; Yuguchi, Kyosuke; Ohkuma, Takeshi; Hobara, Natsuro; Takahashi, Yoshihisa

A fault current limiter (FCL) is extensively expected to suppress fault current, particularly required for trunk power systems heavily connected high-voltage transmission lines, such as 500kV class power system which constitutes the nucleus of the electric power system. By installing such FCL in the power system, the system interconnection is possible without the need to raise the capacity of the circuit breakers, and facilities can be configured for efficiency, among other benefits. For these reasons, fault current limiters based on various principles of operation have been developed both in Japan and abroad. In this paper, we have proposed a new type of FCL system, consisting of solid-state diodes, DC coil and bypass AC coil, and described the specification of distribution power system and 66kV model at the island power system and the superconducting cable power system. Also we have made a practical study of 66kV class, which is the testing items and the future subjects of the rectifier type FCL system.

Logarithmic circuit with wide dynamic range

NASA Technical Reports Server (NTRS)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

Neuromodulation interventions for addictive disorders: challenges, promise, and roadmap for future research.

PubMed

Spagnolo, Primavera A; Goldman, David

2017-05-01

Addictive disorders are a major public health concern, associated with high relapse rates, significant disability and substantial mortality. Unfortunately, current interventions are only modestly effective. Preclinical studies as well as human neuroimaging studies have provided strong evidence that the observable behaviours that characterize the addiction phenotype, such as compulsive drug consumption, impaired self-control, and behavioural inflexibility, reflect underlying dysregulation and malfunction in specific neural circuits. These developments have been accompanied by advances in neuromodulation interventions, both invasive as deep brain stimulation, and non-invasive such as repetitive transcranial magnetic stimulation and transcranial direct current stimulation. These interventions appear particularly promising as they may not only allow us to probe affected brain circuits in addictive disorders, but also seem to have unique therapeutic applications to directly target and remodel impaired circuits. However, the available literature is still relatively small and sparse, and the long-term safety and efficacy of these interventions need to be confirmed. Here we review the literature on the use of neuromodulation in addictive disorders to highlight progress limitations with the aim to suggest future directions for this field. Published by Oxford University Press on behalf of the Guarantors of Brain 2016. This work is written by US Government employees and is in the public domain in the United States.

Cancellation Circuit for Transmit-Receive Isolation

DTIC Science & Technology

2010-09-01

non -ideal hardware, and the performance of the circuit is limited. One of the major problems is the leakage from the circulator. The leakage disrupts...cancellation circuit was investigated by a series of simulations using Agilent ADS (Agilent Advanced Design System), and hardware tests were conducted to...developed in the WDDPA application, allowing coherent processing of the data from all elements. There are limitations encountered due to non -ideal

Fuse protects circuit from voltage and current overloads

NASA Technical Reports Server (NTRS)

Casey, L. O.

1969-01-01

Low-melting resistor connected in series with the load protects the circuit against current overloads. It protects test subjects and patients being monitored by electronic instrumentation from inadvertant overloads of current, and sensitive electronic equipment against high-voltage damage.

Theoretical and experimental studies of error in square-law detector circuits

NASA Technical Reports Server (NTRS)

Stanley, W. D.; Hearn, C. P.; Williams, J. B.

1984-01-01

Square law detector circuits to determine errors from the ideal input/output characteristic function were investigated. The nonlinear circuit response is analyzed by a power series expansion containing terms through the fourth degree, from which the significant deviation from square law can be predicted. Both fixed bias current and flexible bias current configurations are considered. The latter case corresponds with the situation where the mean current can change with the application of a signal. Experimental investigations of the circuit arrangements are described. Agreement between the analytical models and the experimental results are established. Factors which contribute to differences under certain conditions are outlined.

Electric Circuit Model Analogy for Equilibrium Lattice Relaxation in Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Kujofsa, Tedi; Ayers, John E.

2018-01-01

The design and analysis of semiconductor strained-layer device structures require an understanding of the equilibrium profiles of strain and dislocations associated with mismatched epitaxy. Although it has been shown that the equilibrium configuration for a general semiconductor strained-layer structure may be found numerically by energy minimization using an appropriate partitioning of the structure into sublayers, such an approach is computationally intense and non-intuitive. We have therefore developed a simple electric circuit model approach for the equilibrium analysis of these structures. In it, each sublayer of an epitaxial stack may be represented by an analogous circuit configuration involving an independent current source, a resistor, an independent voltage source, and an ideal diode. A multilayered structure may be built up by the connection of the appropriate number of these building blocks, and the node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits can easily be extended to the relaxation of strained-layer structures. Furthermore, the electrical circuit model may be extended to continuously-graded epitaxial layers by considering the limit as the individual sublayer thicknesses are diminished to zero. In this paper, we describe the mathematical foundation of the electrical circuit model, demonstrate its application to several representative structures involving In x Ga1- x As strained layers on GaAs (001) substrates, and develop its extension to continuously-graded layers. This extension allows the development of analytical expressions for the strain, misfit dislocation density, critical layer thickness and widths of misfit dislocation free zones for a continuously-graded layer having an arbitrary compositional profile. It is similar to the transition from circuit theory, using lumped circuit elements, to electromagnetics, using distributed electrical quantities. We show this development using first principles, but, in a more general sense, Maxwell's equations of electromagnetics could be applied.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeloiza, Eddy C.; Burgos, Rolando P.

A step-down AC/AC converter for use in an electric distribution system includes at least one chopper circuit for each one of a plurality of phases of the AC power, each chopper circuit including a four-quadrant switch coupled in series between primary and secondary sides of the chopper circuit and a current-bidirectional two-quadrant switch coupled between the secondary side of the chopper circuit and a common node. Each current-bidirectional two-quadrant switch is oriented in the same direction, with respect to the secondary side of the corresponding chopper circuit and the common node. The converter further includes a control circuit configured tomore » pulse-width-modulate control inputs of the switches, to convert a first multiphase AC voltage at the primary sides of the chopper circuits to a second multiphase AC voltage at the secondary sides of the chopper circuits, the second multiphase AC voltage being lower in voltage than the first multiphase AC voltage.« less

Complex Impedance of Fast Optical Transition Edge Sensors up to 30 MHz

NASA Astrophysics Data System (ADS)

Hattori, K.; Kobayashi, R.; Numata, T.; Inoue, S.; Fukuda, D.

2018-03-01

Optical transition edge sensors (TESs) are characterized by a very fast response, of the order of μs, which is 10^3 times faster than TESs for X-ray and gamma-ray. To extract important parameters associated with the optical TES, complex impedances at high frequencies (> 1 MHz) need to be measured, where the parasitic impedance in the circuit and reflections of electrical signals due to discontinuities in the characteristic impedance of the readout circuits become significant. This prevents the measurements of the current sensitivity β , which can be extracted from the complex impedance. In usual setups, it is hard to build a circuit model taking into account the parasitic impedances and reflections. In this study, we present an alternative method to estimate a transfer function without investigating the details of the entire circuit. Based on this method, the complex impedance up to 30 MHz was measured. The parameters were extracted from the impedance and were compared with other measurements. Using these parameters, we calculated the theoretical limit on an energy resolution and compared it with the measured energy resolution. In this paper, the reasons for the deviation of the measured value from theoretically predicted values will be discussed.

Controlled conjugated backbone twisting for an increased open-circuit voltage while having a high short-circuit current in poly(hexylthiophene) derivatives.

PubMed

Ko, Sangwon; Hoke, Eric T; Pandey, Laxman; Hong, Sanghyun; Mondal, Rajib; Risko, Chad; Yi, Yuanping; Noriega, Rodrigo; McGehee, Michael D; Brédas, Jean-Luc; Salleo, Alberto; Bao, Zhenan

2012-03-21

Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone--due to an increase in the polymer ionization potential--while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2':5',2''-terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current.

A review of wiring system safety in space power systems

NASA Technical Reports Server (NTRS)

Stavnes, Mark W.; Hammoud, Ahmad N.

1993-01-01

Wiring system failures have resulted from arc propagation in the wiring harnesses of current aerospace vehicles. These failures occur when the insulation becomes conductive upon the initiation of an arc. In some cases, the conductive path of the carbon arc track displays a high enough resistance such that the current is limited, and therefore may be difficult to detect using conventional circuit protection. Often, such wiring failures are not simply the result of insulation failure, but are due to a combination of wiring system factors. Inadequate circuit protection, unforgiving system designs, and careless maintenance procedures can contribute to a wiring system failure. This paper approaches the problem with respect to the overall wiring system, in order to determine what steps can be taken to improve the reliability, maintainability, and safety of space power systems. Power system technologies, system designs, and maintenance procedures which have led to past wiring system failures will be discussed. New technologies, design processes, and management techniques which may lead to improved wiring system safety will be introduced.

Modeling and simulation of InGaN/GaN quantum dots solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aissat, A., E-mail: sakre23@yahoo.fr; LASICOMLaboratory, Faculty of Sciences, University of Blida 1; Benyettou, F.

2016-07-25

Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiencymore » begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.« less

30 CFR 75.518-2 - Incandescent lamps, overload and short circuit protection.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Incandescent lamps, overload and short circuit...-General § 75.518-2 Incandescent lamps, overload and short circuit protection. Incandescent lamps installed... or direct current feeder circuits, need not be provided with separate short circuit or overload...

Transition-edge sensor with enhanced electrothermal feedback for cryogenic particle detection

DOEpatents

Nam, Sae Woo; Cabrera, Blas

2001-01-01

A superconducting transition-edge sensor with an electrothermal-feedback circuit, a heat sink thermally coupled thereto, a bias-feedback circuit electrically coupled with the electrothermal feedback circuit, and a current sensor electrically coupled with the bias-feedback circuit and inductively coupled with the electrothermal-feedback circuit.

30 CFR 75.900-1 - Circuit breakers; location.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Circuit breakers; location. 75.900-1 Section 75.900-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY... Alternating Current Circuits § 75.900-1 Circuit breakers; location. Circuit breakers used to protect low-and...

Capacitive transducers

NASA Technical Reports Server (NTRS)

Lucifredi, A. L.

1970-01-01

The theory, applications, and possible structural designs of capacitive transducers are presented. Emphasis is placed on the circuits used in connection with the sensors, such as AM, FM, resonant circuits, mode circuits, direct current circuits, and special circuits. Some criteria for selection of a design or the purchase of a commercial device are given.

The short-circuit current of the ileum, but not the colon, is altered in the streptozotocin diabetic rat.

PubMed

Forrest, Abigail; Makwana, Rajesh; Parsons, Mike

2006-02-01

Ion transport in control and streptozotocin-diabetic rat colon and ileum was studied using the Ussing chamber technique. No differences were observed between control and diabetic colonic mucosal short-circuit current under either basal or carbachol (100 nmol/L-1 micromol/L)-stimulated or prostaglandin E2 (100 nmol/L-1 micromol/L)-stimulated conditions. Similarly to colonic tissues, no differences in the short circuit current in either carbachol-stimulated or prostaglandin E2-stimulated tissues were observed between control and diabetic ileal mucosa. The basal diabetic ileal short circuit current (99.58 +/- 22.67 microA) was significantly greater than that of control ileal tissues (29.67 +/- 4.45 microA). This difference was abolished by the sodium-glucose-cotransporter inhibitor, phloridzin (50 micromol/L) (118.00 +/- 28.09 microA vs. 25.60 +/- 4.59 microA) and was also prevented by the replacement of glucose with mannitol in the buffer bathing the apical side of the tissue (control: 17.05 +/- 5.85 microA vs. 17.90 +/- 3.10 microA). Acetazolamide (450 micromol/L; a carbonic anhydrase inhibitor), amiloride, and bumetanide (100 micromol/L each; Na+-channel blockers), piroxicam (50 micromol/L; a COX1 cyclooxygenase inhibitor), and ouabain (1 mmol/L; a K+ transport inhibitor) had no effect on the basal short circuit current of either control or diabetic ileal tissues. This indicated that the alteration in the basal short circuit current of diabetic ileal tissues was due to a change in cellular glucose transport, whereas the evoked changes in short circuit current were unaffected by the diabetic state.

Development of True Time Delay Circuits

DTIC Science & Technology

2014-06-13

public release Distribution is unlimited DATA SHEET SKY65014-70LF: 0.1-7.0 GHz InGaP Cascadable Amplifier Applications • Wireless infrastructure: WLAN ...decoupling network out of band. For low frequency applications , R1 may be used to conveniently limit supply current on the Evaluation Board. The Evaluation...additional information, refer to the Skyworks Application Note, Solder Reflow Information, document number 200164. Care must be taken when attaching this

Study on the effect of measuring methods on incident photon-to-electron conversion efficiency of dye-sensitized solar cells by home-made setup.

PubMed

Guo, Xiao-Zhi; Luo, Yan-Hong; Zhang, Yi-Duo; Huang, Xiao-Chun; Li, Dong-Mei; Meng, Qing-Bo

2010-10-01

An experimental setup is built for the measurement of monochromatic incident photon-to-electron conversion efficiency (IPCE) of solar cells. With this setup, three kinds of IPCE measuring methods as well as the convenient switching between them are achieved. The setup can also measure the response time and waveform of the short-circuit current of solar cell. Using this setup, IPCE results of dye-sensitized solar cells (DSCs) are determined and compared under different illumination conditions with each method. It is found that the IPCE values measured by AC method involving the lock-in technique are sincerely influenced by modulation frequency and bias illumination. Measurements of the response time and waveform of short-circuit current have revealed that this effect can be explained by the slow response of DSCs. To get accurate IPCE values by this method, the measurement should be carried out with a low modulation frequency and under bias illumination. The IPCE values measured by DC method under the bias light illumination will be disturbed since the short-circuit current increased with time continuously due to the temperature rise of DSC. Therefore, temperature control of DSC is considered necessary for IPCE measurement especially in DC method with bias light illumination. Additionally, high bias light intensity (>2 sun) is found to decrease the IPCE values due to the ion transport limitation of the electrolyte.

Characterization of thermal cut-off mechanisms in prismatic lithium-ion batteries

NASA Astrophysics Data System (ADS)

Venugopal, Ganesh

Lithium-ion (Li-ion) cells that are subjected to electrical abuse, overcharge and external short-circuit in particular, exhibit a rapid increase in cell temperature that could potentially lead to catastrophic disassembly of the cell. For this reason these cells are integrated or combined with one or more safety components that are designed to restrict or even prevent current flow through the cell under abusive conditions. In this work, the characteristics of these components in several prismatic Li-ion cells are studied by monitoring the impedance ( Z) at 1 kHz and the open circuit voltage (OCV) of the discharged cells as a function of temperature. All the cells studied were found to use polyethylene-based shutdown (SD) separators that were irreversibly activated within a narrow temperature range between 130 and 135°C. In some cells irreversible cut-off was also provided by a current interrupt device (CID) or a thermal fuse. Both these devices had a circuit-breaker effect, causing the impedance of the cell to rise infinitely and the OCV to drop to zero. In addition to these irreversible cut-off mechanisms, some cells also contained internal or external positive-temperature-coefficient (PTC) devices that could provide current-limiting capability over a very wide temperature range. The interdependence of the thermal behavior of these components on each other and on other thermally dependant processes like cell venting, separator meltdown and weld joint failure are also discussed.

The Electron Runaround: Understanding Electric Circuit Basics Through a Classroom Activity

NASA Astrophysics Data System (ADS)

Singh, Vandana

2010-05-01

Several misconceptions abound among college students taking their first general physics course, and to some extent pre-engineering physics students, regarding the physics and applications of electric circuits. Analogies used in textbooks, such as those that liken an electric circuit to a piped closed loop of water driven by a water pump, do not completely resolve these misconceptions. Mazur and Knight,2 in particular, separately note that such misconceptions include the notion that electric current on either side of a light bulb in a circuit can be different. Other difficulties and confusions involve understanding why the current in a parallel circuit exceeds the current in a series circuit with the same components, and include the role of the battery (where students may assume wrongly that a dry cell battery is a fixed-current rather than a fixed-voltage device). A simple classroom activity that students can play as a game can resolve these misconceptions, providing an intellectual as well as a hands-on understanding. This paper describes the "Electron Runaround," first developed by the author to teach extremely bright 8-year-old home-schooled children the basics of electric circuits and subsequently altered (according to the required level of instruction) and used for various college physics courses.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Global Electric Circuit Diurnal Variation Derived from Storm Overflight and Satellite Optical Lightning Datasets

NASA Technical Reports Server (NTRS)

Mach, Douglas M.; Blakeslee, R. J.; Bateman, M. J.; Bailey, J. C.

2011-01-01

We have combined analyses of over 1000 high altitude aircraft observations of electrified clouds with diurnal lightning statistics from the Lightning Imaging Sensor (LIS) and Optical Transient Detector (OTD) to produce an estimate of the diurnal variation in the global electric circuit. Using basic assumptions about the mean storm currents as a function of flash rate and location, and the global electric circuit, our estimate of the current in the global electric circuit matches the Carnegie curve diurnal variation to within 4% for all but two short periods of time. The agreement with the Carnegie curve was obtained without any tuning or adjustment of the satellite or aircraft data. Mean contributions to the global electric circuit from land and ocean thunderstorms are 1.1 kA (land) and 0.7 kA (ocean). Contributions to the global electric circuit from ESCs are 0.22 kA for ocean storms and 0.04 kA for land storms. Using our analysis, the mean total conduction current for the global electric circuit is 2.0 kA.

Module Six: Parallel Circuits; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

In this module the student will learn the rules that govern the characteristics of parallel circuits; the relationships between voltage, current, resistance and power; and the results of common troubles in parallel circuits. The module is divided into four lessons: rules of voltage and current, rules for resistance and power, variational analysis,…

Molecular interfaces for plasmonic hot electron photovoltaics

NASA Astrophysics Data System (ADS)

Pelayo García de Arquer, F.; Mihi, Agustín; Konstantatos, Gerasimos

2015-01-01

The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices.The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices. Electronic supplementary information (ESI) available: Contact-potential differentiometry measurements, FTIR characterization, performance statistics and gold devices. See DOI: 10.1039/c4nr06356b

Soft-commutated direct current motor

DOEpatents

Hsu, John S.

1999-01-01

A method and circuit is disclosed for soft-commutation of a direct current (DC) motor. An attenuation circuit is connected through auxiliary brushes A, A', B and B' to the commutator (16) to drain circuit from successive armature coils (15) before the main brushes (27, 28) disconnects from each of the coils (15). This prevents the spark generation that normally occurs in conventional DC motors. The attenuation circuit may also be connected before energization of the coil (15) for a soft turning on operation.

Soft-commutated direct current motor

DOEpatents

Hsu, J.S.

1999-07-27

A method and circuit is disclosed for soft-commutation of a direct current (DC) motor. An attenuation circuit is connected through auxiliary brushes A, A[prime], B and B[prime] to the commutator (16) to drain circuit from successive armature coils (15) before the main brushes (27, 28) disconnects from each of the coils (15). This prevents the spark generation that normally occurs in conventional DC motors. The attenuation circuit may also be connected before energization of the coil (15) for a soft turning on operation. 13 figs.

Hit and go CAS9 delivered through a lentiviral based self-limiting circuit.

PubMed

Petris, Gianluca; Casini, Antonio; Montagna, Claudia; Lorenzin, Francesca; Prandi, Davide; Romanel, Alessandro; Zasso, Jacopo; Conti, Luciano; Demichelis, Francesca; Cereseto, Anna

2017-05-22

In vivo application of the CRISPR-Cas9 technology is still limited by unwanted Cas9 genomic cleavages. Long-term expression of Cas9 increases the number of genomic loci non-specifically cleaved by the nuclease. Here we develop a Self-Limiting Cas9 circuit for Enhanced Safety and specificity (SLiCES) which consists of an expression unit for Streptococcus pyogenes Cas9 (SpCas9), a self-targeting sgRNA and a second sgRNA targeting a chosen genomic locus. The self-limiting circuit results in increased genome editing specificity by controlling Cas9 levels. For its in vivo utilization, we next integrate SLiCES into a lentiviral delivery system (lentiSLiCES) via circuit inhibition to achieve viral particle production. Upon delivery into target cells, the lentiSLiCES circuit switches on to edit the intended genomic locus while simultaneously stepping up its own neutralization through SpCas9 inactivation. By preserving target cells from residual nuclease activity, our hit and go system increases safety margins for genome editing.

The factors influencing nonlinear characteristics of the short-circuit current in dye-sensitized solar cells investigated by a numerical model.

PubMed

Shi, Yushuai; Dong, Xiandui

2013-06-24

A numerical model for interpretation of the light-intensity-dependent nonlinear characteristics of the short-circuit current in dye-sensitized solar cells is suggested. The model is based on the continuity equation and includes the influences of the nongeminate recombination between electrons and electron acceptors in the electrolyte and the geminate recombination between electrons and oxidized dye molecules. The influences of the order and rate constant of the nongeminate recombination reaction, the light-absorption coefficient of the dye, the film thickness, the rate constant of geminate recombination, and the regeneration rate constant on the nonlinear characteristics of the short-circuit current are simulated and analyzed. It is proposed that superlinear and sublinear characteristics of the short-circuit current should be attributed to low electron-collection efficiency and low dye-regeneration efficiency, respectively. These results allow a deep understanding of the origin of the nonlinear characteristics of the short-circuit current in solar cells. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

General analytical solutions for DC/AC circuit-network analysis

NASA Astrophysics Data System (ADS)

Rubido, Nicolás; Grebogi, Celso; Baptista, Murilo S.

2017-06-01

In this work, we present novel general analytical solutions for the currents that are developed in the edges of network-like circuits when some nodes of the network act as sources/sinks of DC or AC current. We assume that Ohm's law is valid at every edge and that charge at every node is conserved (with the exception of the source/sink nodes). The resistive, capacitive, and/or inductive properties of the lines in the circuit define a complex network structure with given impedances for each edge. Our solution for the currents at each edge is derived in terms of the eigenvalues and eigenvectors of the Laplacian matrix of the network defined from the impedances. This derivation also allows us to compute the equivalent impedance between any two nodes of the circuit and relate it to currents in a closed circuit which has a single voltage generator instead of many input/output source/sink nodes. This simplifies the treatment that could be done via Thévenin's theorem. Contrary to solving Kirchhoff's equations, our derivation allows to easily calculate the redistribution of currents that occurs when the location of sources and sinks changes within the network. Finally, we show that our solutions are identical to the ones found from Circuit Theory nodal analysis.

Electrical safety Q&A. A reference guide for the clinical engineer.

PubMed

2005-02-01

This guide, which ECRI developed to answer the electrical safety questions most frequently asked by member hospitals, features practical advice for addressing electrical safety concerns in the healthcare environment. Questions addressed include: STANDARDS AND APPROVALS: What electrical safety standards apply? How do NFPA 99 and IEC 60601-1 differ? What organizations approve medical devices? LEAKAGE CURRENT LIMITS AND TESTING: How are leakage current limits established? What limits apply to equipment used in the hospital? And how should the limits be applied in special cases, such as the use of PCs in the patient care area or equipment used in the clinical laboratory? ISOLATED POWER: What are its advantages and disadvantages, and is isolated power needed in the operating room? Other topics addressed include double insulation, ground-fault circuit interrupters (GFCIs), and requirements for medical devices used in the home. Supplementary articles discuss acceptable alternatives to UL listing, the use of Hospital Grade plugs, the limitations of leakage current testing of devices connected to isolated power systems, and the debate about whether to designate ORs as wet locations. Experienced clinical engineers should find this guide to be a handy reference, while those new to the field should find it to be a helpful educational resource.

30 CFR 28.4 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... MINING PRODUCTS FUSES FOR USE WITH DIRECT CURRENT IN PROVIDING SHORT-CIRCUIT PROTECTION FOR TRAILING... provides short-circuit protection for trailing cables in coal mines by interrupting an excessive current in...

ICRF antenna-plasma interactions and its influence on W sputtering in ASDEX upgrade

NASA Astrophysics Data System (ADS)

ASDEX Upgrade Team Bobkov, Vl.; Braun, F.; Colas, L.; Dux, R.; Faugel, H.; Giannone, L.; Herrmann, A.; Kallenbach, A.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Siegl, G.; Wolfrum, E.

2011-08-01

Analysis of the W concentration during ICRF over AUG experimental campaigns confirms the critical role of W antenna limiters for the W content in plasma, though other structures connected to antennas along magnetic field lines cannot be neglected as W sources.Abrupt changes of spectroscopically measured W sputtering patterns are observed which correlate with step-wise changes of connection lengths at antenna limiters. Analysis of discharges with the reversed direction of toroidal magnetic field shows less W release compared to identical discharges with the normal direction. The lower W release is accompanied by lower intensity of fluctuations of reflected ICRF power in the 1-60 kHz range. The observations suggest that local magnetic geometry and density convection at the antennas are at least as important for the W sputtering as the distribution of RF near-fields at the antenna.Measurements of DC currents flowing through the antenna limiters show that the limiters at the active antenna collect predominantly negative DC currents whereas those distant from the active antenna collect predominantly positive DC currents. The latter decrease and become more negative when the intensity of the RF pickup measured at the limiters increases. The mutual compensation between the positive and negative currents can lead to lower values of the DC current than those expected from simplified theoretical models of the RF/DC circuit.

ICRF antenna-plasma interactions and its influence on W sputtering in ASDEX upgrade

NASA Astrophysics Data System (ADS)

Bobkov, Vl.; Braun, F.; Colas, L.; Dux, R.; Faugel, H.; Giannone, L.; Herrmann, A.; Kallenbach, A.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Siegl, G.; Wolfrum, E.; ASDEX Upgrade Team

2011-08-01

Analysis of the W concentration during ICRF over AUG experimental campaigns confirms the critical role of W antenna limiters for the W content in plasma, though other structures connected to antennas along magnetic field lines cannot be neglected as W sources. Abrupt changes of spectroscopically measured W sputtering patterns are observed which correlate with step-wise changes of connection lengths at antenna limiters. Analysis of discharges with the reversed direction of toroidal magnetic field shows less W release compared to identical discharges with the normal direction. The lower W release is accompanied by lower intensity of fluctuations of reflected ICRF power in the 1-60 kHz range. The observations suggest that local magnetic geometry and density convection at the antennas are at least as important for the W sputtering as the distribution of RF near-fields at the antenna. Measurements of DC currents flowing through the antenna limiters show that the limiters at the active antenna collect predominantly negative DC currents whereas those distant from the active antenna collect predominantly positive DC currents. The latter decrease and become more negative when the intensity of the RF pickup measured at the limiters increases. The mutual compensation between the positive and negative currents can lead to lower values of the DC current than those expected from simplified theoretical models of the RF/DC circuit.

Restraining for switching effects in an AC driving pixel circuit of the OLED-on-silicon

NASA Astrophysics Data System (ADS)

Liu, Yan-Yan; Geng, Wei-Dong; Dai, Yong-Ping

2010-03-01

The AC driving scheme for OLEDs, which uses the pixel circuit with two transistors and one capacitor (2T1C), can extend the lifetime of the active matrix organic light-emitting diode (AMOLED) on silicon, but there are switching effects during the switch of AC signals, which result in the voltage variation on the storage capacitor and cause the current glitch in OLED. That would decrease the gray scale of the OLED. This paper proposes a novel pixel circuit consisting of three transistors and one capacitor to realize AC driving for the OLED-on-silicon while restraining the switching effects. Simulation results indicate that the proposed circuit is less sensitive to switching effects. Also, another pixel circuit is proposed to further reduce the driving current to meet the current constraints for the OLED-on-silicon.

Library of synthetic transcriptional AND gates built with split T7 RNA polymerase mutants

PubMed Central

Shis, David L.; Bennett, Matthew R.

2013-01-01

The construction of synthetic gene circuits relies on our ability to engineer regulatory architectures that are orthogonal to the host’s native regulatory pathways. However, as synthetic gene circuits become larger and more complicated, we are limited by the small number of parts, especially transcription factors, that work well in the context of the circuit. The current repertoire of transcription factors consists of a limited selection of activators and repressors, making the implementation of transcriptional logic a complicated and component-intensive process. To address this, we modified bacteriophage T7 RNA polymerase (T7 RNAP) to create a library of transcriptional AND gates for use in Escherichia coli by first splitting the protein and then mutating the DNA recognition domain of the C-terminal fragment to alter its promoter specificity. We first demonstrate that split T7 RNAP is active in vivo and compare it with full-length enzyme. We then create a library of mutant split T7 RNAPs that have a range of activities when used in combination with a complimentary set of altered T7-specific promoters. Finally, we assay the two-input function of both wild-type and mutant split T7 RNAPs and find that regulated expression of the N- and C-terminal fragments of the split T7 RNAPs creates AND logic in each case. This work demonstrates that mutant split T7 RNAP can be used as a transcriptional AND gate and introduces a unique library of components for use in synthetic gene circuits. PMID:23479654

Library of synthetic transcriptional AND gates built with split T7 RNA polymerase mutants.

PubMed

Shis, David L; Bennett, Matthew R

2013-03-26

The construction of synthetic gene circuits relies on our ability to engineer regulatory architectures that are orthogonal to the host's native regulatory pathways. However, as synthetic gene circuits become larger and more complicated, we are limited by the small number of parts, especially transcription factors, that work well in the context of the circuit. The current repertoire of transcription factors consists of a limited selection of activators and repressors, making the implementation of transcriptional logic a complicated and component-intensive process. To address this, we modified bacteriophage T7 RNA polymerase (T7 RNAP) to create a library of transcriptional AND gates for use in Escherichia coli by first splitting the protein and then mutating the DNA recognition domain of the C-terminal fragment to alter its promoter specificity. We first demonstrate that split T7 RNAP is active in vivo and compare it with full-length enzyme. We then create a library of mutant split T7 RNAPs that have a range of activities when used in combination with a complimentary set of altered T7-specific promoters. Finally, we assay the two-input function of both wild-type and mutant split T7 RNAPs and find that regulated expression of the N- and C-terminal fragments of the split T7 RNAPs creates AND logic in each case. This work demonstrates that mutant split T7 RNAP can be used as a transcriptional AND gate and introduces a unique library of components for use in synthetic gene circuits.

Unified Ultrasonic/Eddy-Current Data Acquisition

NASA Technical Reports Server (NTRS)

Chern, E. James; Butler, David W.

1993-01-01

Imaging station for detecting cracks and flaws in solid materials developed combining both ultrasonic C-scan and eddy-current imaging. Incorporation of both techniques into one system eliminates duplication of computers and of mechanical scanners; unifies acquisition, processing, and storage of data; reduces setup time for repetitious ultrasonic and eddy-current scans; and increases efficiency of system. Same mechanical scanner used to maneuver either ultrasonic or eddy-current probe over specimen and acquire point-by-point data. For ultrasonic scanning, probe linked to ultrasonic pulser/receiver circuit card, while, for eddy-current imaging, probe linked to impedance-analyzer circuit card. Both ultrasonic and eddy-current imaging subsystems share same desktop-computer controller, containing dedicated plug-in circuit boards for each.

Bypassing An Open-Circuit Power Cell

NASA Technical Reports Server (NTRS)

Wannemacher, Harry E.

1994-01-01

Collection of bypass circuits enables battery consisting series string of cells to continue to function when one of its cells fails in open-circuit (high-resistance) condition. Basic idea simply to shunt current around defective cell to prevent open circuit from turning off battery altogether. Bypass circuits dissipate little power and are nearly immune to false activation.

Transistor circuit increases range of logarithmic current amplifier

NASA Technical Reports Server (NTRS)

Gilmour, G.

1966-01-01

Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor. A temperature compensating network is provided for the transistor.

Development of Android based Smart Power Saving System

NASA Astrophysics Data System (ADS)

Gupta, Ashutosh; Kumar, Pradeep; Ghosh, Tathagata; Bhawna, Shruthi. S.

2017-08-01

An android based smart power saving system has been presented in this paper. For this purpose, an application is developed for controlling the intensity of an AC supply using a dimmer circuit in android platform and to monitor the current flow on different intensity level a current sensor is used in the circuit. Dimmer circuit provides a 16-different intensity level to control the flow of current and help in power saving. The system is very simple and robust as it is based on android platform.

Apparatus including a plurality of spaced transformers for locating short circuits in cables

NASA Technical Reports Server (NTRS)

Cason, R. L.; Mcstay, J. J. (Inventor)

1978-01-01

A cable fault locator is described for sensing faults such as short circuits in power cables. The apparatus includes a plurality of current transformers strategically located along a cable. Trigger circuits are connected to each of the current transformers for placing a resistor in series with a resistive element responsive to an abnormally high current flowing through that portion of the cable. By measuring the voltage drop across the resistive element, the location of the fault can be determined.

Damping Resonant Current in a Spark-Gap Trigger Circuit to Reduce Noise

DTIC Science & Technology

2009-06-01

DAMPING RESONANT CURRENT IN A SPARK- GAP TRIGGER CIRCUIT TO REDUCE NOISE E. L. Ruden Air Force Research Laboratory, Directed Energy Directorate, AFRL...REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Damping Resonant Current In A Spark- Gap Trigger Circuit To Reduce Noise 5a...thereby triggering 2 after delay 0, is 1. Each of the two rail- gaps (represented by 2) is trig- gered to close after the spark- gap (1) in the

MOSFET Power Controller

NASA Technical Reports Server (NTRS)

Mitchell, J.; Jones, K.

1986-01-01

High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

Electrical coupled Morris-Lecar neurons: From design to pattern analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Binczak, S.; Behdad, R.; Rossé, M.

2016-06-08

In this study, an experimental electronic neuron based on Morris-Lecar model is presented, able to become an experimental unit tool to study collective association of robust coupled neurons. The circuit design is given according to the ionic currents of this model. A weak coupling of such neurons under Multisim Software can generate clusters based on the boundary conditions of the neurons and their initial conditions. For this study, we work in the region close to the fold bifurcation of limit cycles. In this region two limit cycles exist, one of the cycles is stable and another one is unstable.

TRIPPING CIRCUIT

DOEpatents

Lees, G.W.; McCormick, E.D.

1962-05-22

A tripping circuit employing a magnetic amplifier for tripping a reactor in response to power level, period, or instrument failure is described. A reference winding and signal winding are wound in opposite directions on the core. Current from an ion chamber passes through both windings. If the current increases at too fast a rate, a shunt circuit bypasses one or the windings and the amplifier output reverses polarity. (AEC)

Hybrid Direct-Current Circuit Breaker

NASA Technical Reports Server (NTRS)

Wang, Ruxi (Inventor); Premerlani, William James (Inventor); Caiafa, Antonio (Inventor); Pan, Yan (Inventor)

2017-01-01

A circuit breaking system includes a first branch including at least one solid-state snubber; a second branch coupled in parallel to the first branch and including a superconductor and a cryogenic contactor coupled in series; and a controller operatively coupled to the at least one solid-state snubber and the cryogenic contactor and programmed to, when a fault occurs in the load circuit, activate the at least one solid-state snubber for migrating flow of the electrical current from the second branch to the first branch, and, when the fault is cleared in the load circuit, activate the cryogenic contactor for migrating the flow of the electrical current from the first branch to the second branch.

High noise immunity one shot

NASA Technical Reports Server (NTRS)

Schaffer, G. L.

1972-01-01

Multivibrator circuit, which includes constant current source, isolates line noise from timing circuitry and field effect transistor controls circuit's operational modes. Circuit has high immunity to supply line noise.

III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; Klein, Talysa R.; Jain, Nikhil

Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells canmore » be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.« less

Surge Protection in Low-Voltage AC Power Circuits: An Anthology

NASA Astrophysics Data System (ADS)

Martzloff, F. D.

2002-10-01

The papers included in this part of the Anthology provide basic information on the propagation of surges in low-voltage AC power circuits. The subject was approached by a combination of experiments and theoretical considerations. One important distinction is made between voltage surges and current surges. Historically, voltage surges were the initial concern. After the introduction and widespread use of current-diverting surge-protective devices at the point-of-use, the propagation of current surges became a significant factor. The papers included in this part reflect this dual dichotomy of voltage versus current and impedance mismatch effects versus simple circuit theory.

Design of Low Power CMOS Read-Out with TDI Function for Infrared Linear Photodiode Array Detectors

NASA Technical Reports Server (NTRS)

Vizcaino, Paul; Ramirez-Angulo, Jaime; Patel, Umesh D.

2007-01-01

A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of 1uA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiode in a cell if detected as faulty. Simulations are shown that verify the circuit that is currently in fabrication in 0.5ym CMOS technology.

Current balancing for battery strings

DOEpatents

Galloway, James H.

1985-01-01

A battery plant is described which features magnetic circuit means for balancing the electrical current flow through a pluraliircuitbattery strings which are connected electrically in parallel. The magnetic circuit means is associated with the battery strings such that the conductors carrying the electrical current flow through each of the battery strings pass through the magnetic circuit means in directions which cause the electromagnetic fields of at least one predetermined pair of the conductors to oppose each other. In an alternative embodiment, a low voltage converter is associated with each of the battery strings for balancing the electrical current flow through the battery strings.

Electrical short circuit and current overload tests on aircraft wiring

NASA Technical Reports Server (NTRS)

Cahill, Patricia

1995-01-01

The findings of electrical short circuit and current overload tests performed on commercial aircraft wiring are presented. A series of bench-scale tests were conducted to evaluate circuit breaker response to overcurrent and to determine if the wire showed any visible signs of thermal degradation due to overcurrent. Three types of wire used in commercial aircraft were evaluated: MIL-W-22759/34 (150 C rated), MIL-W-81381/12 (200 C rated), and BMS 1360 (260 C rated). A second series of tests evaluated circuit breaker response to short circuits and ticking faults. These tests were also meant to determine if the three test wires behaved differently under these conditions and if a short circuit or ticking fault could start a fire. It is concluded that circuit breakers provided reliable overcurrent protection. Circuit breakers may not protect wire from ticking faults but can protect wire from direct shorts. These tests indicated that the appearance of a wire subjected to a current that totally degrades the insulation looks identical to a wire subjected to a fire; however the 'fire exposed' conductor was more brittle than the conductor degraded by overcurrent. Preliminary testing indicates that direct short circuits are not likely to start a fire. Preliminary testing indicated that direct short circuits do not erode insulation and conductor to the extent that ticking faults did. Circuit breakers may not safeguard against the ignition of flammable materials by ticking faults. The flammability of materials near ticking faults is far more important than the rating of the wire insulation material.

Current Regulator For Sodium-Vapor Lamps

NASA Technical Reports Server (NTRS)

Mclyman, W. T.

1989-01-01

Regulating circuit maintains nearly-constant alternating current in sodium-vapor lamp. Regulator part of dc-to-ac inverter circuit used to supply power to street lamp from battery charged by solar-cell array.

Sensitivity of solar-cell performance to atmospheric variables. 2: Dissimilar cells at several locations

NASA Technical Reports Server (NTRS)

Klucher, T. M.; Hart, R. E.

1976-01-01

Several solar cells having dissimilar spectral response curves and cell construction were measured at various locations in the United States to determine sensitivity of cell performance to atmospheric water vapor and turbidity. The locations selected represent a broad range of summer atmospheric conditions, from clear and dry to turbid and humid. Cell short circuit current under direct normal incidence sunlight, the intensity, water vapor and turbidity were measured. Regression equations were developed from the limited data base in order to provide a single method of prediction of cell current sensitivity to the atmospheric variables.

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

NASA Astrophysics Data System (ADS)

Zhou, Yi; Li, Gongping

2018-05-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

NASA Astrophysics Data System (ADS)

Zhou, Yi; Li, Gongping

2018-07-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

One-way quantum computing in superconducting circuits

NASA Astrophysics Data System (ADS)

Albarrán-Arriagada, F.; Alvarado Barrios, G.; Sanz, M.; Romero, G.; Lamata, L.; Retamal, J. C.; Solano, E.

2018-03-01

We propose a method for the implementation of one-way quantum computing in superconducting circuits. Measurement-based quantum computing is a universal quantum computation paradigm in which an initial cluster state provides the quantum resource, while the iteration of sequential measurements and local rotations encodes the quantum algorithm. Up to now, technical constraints have limited a scalable approach to this quantum computing alternative. The initial cluster state can be generated with available controlled-phase gates, while the quantum algorithm makes use of high-fidelity readout and coherent feedforward. With current technology, we estimate that quantum algorithms with above 20 qubits may be implemented in the path toward quantum supremacy. Moreover, we propose an alternative initial state with properties of maximal persistence and maximal connectedness, reducing the required resources of one-way quantum computing protocols.

Separate Poles Mode for Large-Capacity HVDC System

NASA Astrophysics Data System (ADS)

Zhu, Lin; Gao, Qin

2017-05-01

This paper proposes a novel connection mode, separate poles mode (SPM), for large-capacity HVDC systems. The proposed mode focuses on the core issues of HVDC connection in interconnected power grids and principally aims at increasing effective electric distance between poles, which helps to mitigate the interaction problems between AC system and DC system. Receiving end of bipolar HVDC has been divided into different inverter stations under the mode, and thus significantly alleviates difficulties in power transmission and consumption of receiving-end AC grids. By investigating the changes of multi-feed short-circuit ratio (MISCR), finding that HVDC with SPM shows critical impacts upon itself and other HVDC systems with conventional connection mode, which demonstrates that SPM can make balance between MISCR increase and short-circuit current limit.

Non-Foster Circuits for High Performance Antennas: Advantages and Practical Limitations

NASA Astrophysics Data System (ADS)

Jacob, Minu Mariam

The demand for miniaturized, broadband communication systems has created a need for electrically small, broadband antennas. However, all passive electrically small antennas have a fundamental gain-bandwidth limitation related to their electrical size, as first described by Wheeler and Chu. This limitation can be overcome using active non-Foster circuits (negative inductors and/or negative capacitors), which can deliver a broadband input match with active matching techniques, or can help reduce phase dispersion using negative delay effects. This thesis will illustrate the advantages of non-Foster circuits in obtaining broadband small antennas, in addition to examining their practical limitations due to noise in receive applications, and nonlinearity in transmit applications.

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2011 CFR

2011-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2010 CFR

2010-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2014 CFR

2014-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2013 CFR

2013-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

NASCOM network ground communications availability report

NASA Technical Reports Server (NTRS)

1983-01-01

A performance analysis of NASCOM Network circuits is presented. An objective of 99.80 percent availability has been established for all network circuits and an acceptable level of 99.50. A network narrative summary for the current month includes changes in network configurations, current month's totals for modes of service and trouble category losses, a discussion of trends, and significant losses that affected the performance indexes of individual or groups of circuits. A table and narrative summary of those circuits that failed to meet the objective of 99.80% availability for all network circuits and an acceptable level of 99.50. Lost time and interruption tables showing all circuits affected by outages, by trouble category, with their total time and events, scheduled operating hours, and individual availability indexes also are included. Selected circuits whose availabilities have or continue to affect the overall network availability are also analyzed.

Biasing and fast degaussing circuit for magnetic materials

DOEpatents

Dress, Jr., William B.; McNeilly, David R.

1984-01-01

A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a d.c. current and alternately apply a selectively damped a.c. current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

Biasing and fast degaussing circuit for magnetic materials

DOEpatents

Dress, W.B. Jr.; McNeilly, D.R.

1983-10-04

A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a dc current and alternately apply a selectively damped ac current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

49 CFR 236.2 - Grounds.

Code of Federal Regulations, 2011 CFR

2011-10-01

... circuit, except circuits which include any track rail and except the common return wires of single-wire, single-break, signal control circuits using a grounded common, and alternating current power distribution...

49 CFR 236.2 - Grounds.

Code of Federal Regulations, 2013 CFR

2013-10-01

... circuit, except circuits which include any track rail and except the common return wires of single-wire, single-break, signal control circuits using a grounded common, and alternating current power distribution...

49 CFR 236.2 - Grounds.

Code of Federal Regulations, 2012 CFR

2012-10-01

... circuit, except circuits which include any track rail and except the common return wires of single-wire, single-break, signal control circuits using a grounded common, and alternating current power distribution...

An integrated circuit switch

NASA Technical Reports Server (NTRS)

Bonin, E. L.

1969-01-01

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

46 CFR 28.365 - Overcurrent protection and switched circuits.

Code of Federal Regulations, 2011 CFR

2011-10-01

.... (c) Each ungrounded current carrying conductor must be protected in accordance with its current carrying capacity by a circuit breaker or fuse at the connection to the switchboard or distribution panel...

Equations For Rotary Transformers

NASA Technical Reports Server (NTRS)

Salomon, Phil M.; Wiktor, Peter J.; Marchetto, Carl A.

1988-01-01

Equations derived for input impedance, input power, and ratio of secondary current to primary current of rotary transformer. Used for quick analysis of transformer designs. Circuit model commonly used in textbooks on theory of ac circuits.

Current sensing circuit

NASA Technical Reports Server (NTRS)

Franke, Ralph J. (Inventor)

1996-01-01

A current sensing circuit is described in which a pair of bipolar transistors are arranged with a pair of field effect transistors such that the field effect transistors absorb most of the supply voltage associated with a load.

The circuit parameters measurement of the SABALAN-I plasma focus facility and comparison with Lee Model

NASA Astrophysics Data System (ADS)

Karimi, F. S.; Saviz, S.; Ghoranneviss, M.; Salem, M. K.; Aghamir, F. M.

The circuit parameters are investigated in a Mather-type plasma focus device. The experiments are performed in the SABALAN-I plasma focus facility (2 kJ, 20 kV, 10 μF). A 12-turn Rogowski coil is built and used to measure the time derivative of discharge current (dI/dt). The high pressure test has been performed in this work, as alternative technique to short circuit test to determine the machine circuit parameters and calibration factor of the Rogowski coil. The operating parameters are calculated by two methods and the results show that the relative error of determined parameters by method I, are very low in comparison to method II. Thus the method I produces more accurate results than method II. The high pressure test is operated with this assumption that no plasma motion and the circuit parameters may be estimated using R-L-C theory given that C0 is known. However, for a plasma focus, even at highest permissible pressure it is found that there is significant motion, so that estimated circuit parameters not accurate. So the Lee Model code is used in short circuit mode to generate the computed current trace for fitting to the current waveform was integrated from current derivative signal taken with Rogowski coil. Hence, the dynamics of plasma is accounted for into the estimation and the static bank parameters are determined accurately.

Method and system for a gas tube-based current source high voltage direct current transmission system

DOEpatents

She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di

2017-08-29

A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.

Laser beam apparatus and method for analyzing solar cells

DOEpatents

Staebler, David L.

1980-01-01

A laser beam apparatus and method for analyzing, inter alia, the current versus voltage curve at the point of illumination on a solar cell and the open circuit voltage of a solar cell. The apparatus incorporates a lock-in amplifier, and a laser beam light chopper which permits the measurement of the AC current of the solar cell at an applied DC voltage at the position on the solar cell where the cell is illuminated and a feedback scheme which permits the direct scanning measurements of the open circuit voltage. The accuracy of the measurement is a function of the intensity and wavelength of the laser light with respect to the intensity and wavelength distribution of sunlight and the percentage the dark current is at the open circuit voltage to the short circuit current of the solar cell.

A new approach to equipment testing

NASA Technical Reports Server (NTRS)

Hardwick, C. J.; Dunkley, V. P.; Burrows, B. J. C.; Darney, I.

1991-01-01

Considerable controversy has arisen during the recent discussions over a new version of the RTCA DO160C/ED 14C Section 22 document at the European Committee for Aviation Electronics. Section 22 is concerned with lightning waveform tests to equipment. Investigations of some of these controversies with circuit analysis and measurements indicate the impedance characteristics required of the transient generators and the possibility of testing to a voltage limit even for current waveforms.

A new approach to equipment testing

NASA Astrophysics Data System (ADS)

Hardwick, C. J.; Dunkley, V. P.; Burrows, B. J. C.; Darney, I.

1991-08-01

Considerable controversy has arisen during the recent discussions over a new version of the RTCA DO160C/ED 14C Section 22 document at the European Committee for Aviation Electronics. Section 22 is concerned with lightning waveform tests to equipment. Investigations of some of these controversies with circuit analysis and measurements indicate the impedance characteristics required of the transient generators and the possibility of testing to a voltage limit even for current waveforms.

46 CFR 111.52-3 - Systems below 1500 kilowatts.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Calculation of Short-Circuit Currents § 111.52-3 Systems below 1500 kilowatts. The... maximum short-circuit current of a direct current system must be assumed to be 10 times the aggregate...

46 CFR 111.52-3 - Systems below 1500 kilowatts.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Calculation of Short-Circuit Currents § 111.52-3 Systems below 1500 kilowatts. The... maximum short-circuit current of a direct current system must be assumed to be 10 times the aggregate...

30 CFR 75.1323 - Blasting circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

...) Blasting circuits shall be protected from sources of stray electric current. (b) Detonators made by...) Each wire connection in a blasting circuit shall be— (1) Properly spliced; and (2) Separated from other connections in the circuit to prevent accidental contact and arcing. (h) Uninsulated connections in each...

30 CFR 75.1323 - Blasting circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

...) Blasting circuits shall be protected from sources of stray electric current. (b) Detonators made by...) Each wire connection in a blasting circuit shall be— (1) Properly spliced; and (2) Separated from other connections in the circuit to prevent accidental contact and arcing. (h) Uninsulated connections in each...

A novel compensation method for the anode gain non-uniformity of multi-anode photomultiplier tubes

NASA Astrophysics Data System (ADS)

Lee, Chan Mi; Kwon, Sun Il; Ko, Guen Bae; Ito, Mikiko; Yoon, Hyun Suk; Lee, Dong Soo; Jong Hong, Seong; Lee, Jae Sung

2012-01-01

The position-sensitive multi-anode photomultiplier tube (MA-PMT) is widely used in high-resolution scintillation detectors. However, the anode gain non-uniformity of this device is a limiting factor that degrades the intrinsic performance of the detector module. The aim of this work was to develop a gain compensation method for the MA-PMT and evaluate the resulting enhancement in the performance of the detector. The method employs a circuit that is composed only of resistors and is placed between the MA-PMT and a resistive charge division network (RCN) used for position encoding. The goal of the circuit is to divide the output current from each anode, so the same current flows into the RCN regardless of the anode gain. The current division is controlled by the combination of a fixed-value series resistor with an output impedance that is much larger than the input impedance of the RCN, and a parallel resistor, which detours part of the current to ground. PSpice simulations of the compensation circuit and the RCN were performed to determine optimal values for the compensation resistors when used with Hamamatsu H8500 MA-PMTs. The intrinsic characteristics of a detector module consisting of this MA-PMT and a lutetium-gadolinium-oxyorthosilicate (LGSO) crystal array were tested with and without the gain compensation method. In simulation, the average coefficient of variation and max/min ratio decreased from 15.7% to 2.7% and 2.0 to 1.2, respectively. In the flood map of the LGSO-H8500 detector, the uniformity of the photopeak position for individual crystals and the energy resolution were much improved. The feasibility of the method was shown by applying it to an octagonal prototype positron emission tomography scanner.

A differential memristive synapse circuit for on-line learning in neuromorphic computing systems

NASA Astrophysics Data System (ADS)

Nair, Manu V.; Muller, Lorenz K.; Indiveri, Giacomo

2017-12-01

Spike-based learning with memristive devices in neuromorphic computing architectures typically uses learning circuits that require overlapping pulses from pre- and post-synaptic nodes. This imposes severe constraints on the length of the pulses transmitted in the network, and on the network’s throughput. Furthermore, most of these circuits do not decouple the currents flowing through memristive devices from the one stimulating the target neuron. This can be a problem when using devices with high conductance values, because of the resulting large currents. In this paper, we propose a novel circuit that decouples the current produced by the memristive device from the one used to stimulate the post-synaptic neuron, by using a novel differential scheme based on the Gilbert normalizer circuit. We show how this circuit is useful for reducing the effect of variability in the memristive devices, and how it is ideally suited for spike-based learning mechanisms that do not require overlapping pre- and post-synaptic pulses. We demonstrate the features of the proposed synapse circuit with SPICE simulations, and validate its learning properties with high-level behavioral network simulations which use a stochastic gradient descent learning rule in two benchmark classification tasks.

Coupling intensity between discharge and magnetic circuit in Hall thrusters

NASA Astrophysics Data System (ADS)

Wei, Liqiu; Yang, Xinyong; Ding, Yongjie; Yu, Daren; Zhang, Chaohai

2017-03-01

Coupling oscillation is a newly discovered plasma oscillation mode that utilizes the coupling between the discharge circuit and magnetic circuit, whose oscillation frequency spectrum ranges from several kilohertz to megahertz. The coupling coefficient parameter represents the intensity of coupling between the discharge and magnetic circuits. According to previous studies, the coupling coefficient is related to the material and the cross-sectional area of the magnetic coils, and the magnetic circuit of the Hall thruster. However, in our recent study on coupling oscillations, it was found that the Hall current equivalent position and radius have important effects on the coupling intensity between the discharge and magnetic circuits. This causes a difference in the coupling coefficient for different operating conditions of Hall thrusters. Through non-intrusive methods for measuring the Hall current equivalent radius and the axial position, it is found that with an increase in the discharge voltage and magnetic field intensity, the Hall current equivalent radius increases and its axial position moves towards the exit plane. Thus, both the coupling coefficient and the coupling intensity between the discharge and magnetic circuits increase. Contribution to the Topical Issue "Physics of Ion Beam Sources", edited by Holger Kersten and Horst Neumann.

A Low-Power Wide Dynamic-Range Current Readout Circuit for Ion-Sensitive FET Sensors.

PubMed

Son, Hyunwoo; Cho, Hwasuk; Koo, Jahyun; Ji, Youngwoo; Kim, Byungsub; Park, Hong-June; Sim, Jae-Yoon

2017-06-01

This paper presents an amplifier-less and digital-intensive current-to-digital converter for ion-sensitive FET sensors. Capacitance on the input node is utilized as a residue accumulator, and a clocked comparator is followed for quantization. Without any continuous-time feedback circuit, the converter performs a first-order noise shaping of the quantization error. In order to minimize static power consumption, the proposed circuit employs a single-ended current-steering digital-to-analog converter which flows only the same current as the input. By adopting a switching noise averaging algorithm, our dynamic element matching not only mitigates mismatch of current sources in the current-steering DAC, but also makes the effect of dynamic switching noise become an input-independent constant. The implemented circuit in 0.35 μm CMOS converts the current input with a range of 2.8 μ A to 15 b digital output in about 4 ms, showing a DNL of +0.24/-0.25 LSB and an INL of + 1.98/-1.98 LSB while consuming 16.8 μW.

Cascaded resonant bridge converters

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor)

1989-01-01

A converter for converting a low voltage direct current power source to a higher voltage, high frequency alternating current output for use in an electrical system where it is desired to use low weight cables and other circuit elements. The converter has a first stage series resonant (Schwarz) converter which converts the direct current power source to an alternating current by means of switching elements that are operated by a variable frequency voltage regulator, a transformer to step up the voltage of the alternating current, and a rectifier bridge to convert the alternating current to a direct current first stage output. The converter further has a second stage series resonant (Schwarz) converter which is connected in series to the first stage converter to receive its direct current output and convert it to a second stage high frequency alternating current output by means of switching elements that are operated by a fixed frequency oscillator. The voltage of the second stage output is controlled at a relatively constant value by controlling the first stage output voltage, which is accomplished by controlling the frequency of the first stage variable frequency voltage controller in response to second stage voltage. Fault tolerance in the event of a load short circuit is provided by making the operation of the first stage variable frequency voltage controller responsive to first and second stage current limiting devices. The second stage output is connected to a rectifier bridge whose output is connected to the input of the second stage to provide good regulation of output voltage wave form at low system loads.

30 CFR 57.6402 - Deenergized circuits near detonators.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Electric Blasting-Surface and Underground § 57.6402 Deenergized circuits near detonators. Electrical distribution circuits within 50 feet of electric detonators at the blast site shall be deenergized. Such circuits need not be deenergized between 25 to 50 feet of the electric detonators if stray current tests...

30 CFR 75.815 - Disconnect devices.

Code of Federal Regulations, 2011 CFR

2011-07-01

... phase-to-phase voltage of the circuit in which they are installed, and for the full-load current of the... explosion-proof enclosures, must be capable of interrupting the full-load current of the circuit or designed and installed to cause the current to be interrupted automatically prior to the opening of the...

30 CFR 75.815 - Disconnect devices.

Code of Federal Regulations, 2010 CFR

2010-07-01

... phase-to-phase voltage of the circuit in which they are installed, and for the full-load current of the... explosion-proof enclosures, must be capable of interrupting the full-load current of the circuit or designed and installed to cause the current to be interrupted automatically prior to the opening of the...

Compact high voltage solid state switch

DOEpatents

Glidden, Steven C.

2003-09-23

A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

Mobile Learning Based Worked Example in Electric Circuit (WEIEC) Application to Improve the High School Students' Electric Circuits Interpretation Ability

ERIC Educational Resources Information Center

Yadiannur, Mitra; Supahar

2017-01-01

This research aims to determine the feasibility and effectivity of mobile learning based Worked Example in Electric Circuits (WEIEC) application in improving the high school students' electric circuits interpretation ability on Direct Current Circuits materials. The research method used was a combination of Four-D Models and ADDIE model. The…

33 CFR 183.435 - Conductors in circuits of 50 volts or more.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Conductors in circuits of 50... Requirements § 183.435 Conductors in circuits of 50 volts or more. (a) Each conductor in a circuit that has a... nominal circuit voltage of each of three or more current carrying conductors in a duct, bundle, or cable...

33 CFR 183.435 - Conductors in circuits of 50 volts or more.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01 false Conductors in circuits of 50... Requirements § 183.435 Conductors in circuits of 50 volts or more. (a) Each conductor in a circuit that has a... nominal circuit voltage of each of three or more current carrying conductors in a duct, bundle, or cable...

33 CFR 183.435 - Conductors in circuits of 50 volts or more.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 33 Navigation and Navigable Waters 2 2011-07-01 2011-07-01 false Conductors in circuits of 50... Requirements § 183.435 Conductors in circuits of 50 volts or more. (a) Each conductor in a circuit that has a... nominal circuit voltage of each of three or more current carrying conductors in a duct, bundle, or cable...

33 CFR 183.435 - Conductors in circuits of 50 volts or more.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 33 Navigation and Navigable Waters 2 2012-07-01 2012-07-01 false Conductors in circuits of 50... Requirements § 183.435 Conductors in circuits of 50 volts or more. (a) Each conductor in a circuit that has a... nominal circuit voltage of each of three or more current carrying conductors in a duct, bundle, or cable...

33 CFR 183.435 - Conductors in circuits of 50 volts or more.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01 false Conductors in circuits of 50... Requirements § 183.435 Conductors in circuits of 50 volts or more. (a) Each conductor in a circuit that has a... nominal circuit voltage of each of three or more current carrying conductors in a duct, bundle, or cable...

Consequences and mitigation of saltwater intrusion induced by short-circuiting during aquifer storage and recovery in a coastal subsurface

NASA Astrophysics Data System (ADS)

Gerardus Zuurbier, Koen; Stuyfzand, Pieter Jan

2017-02-01

Coastal aquifers and the deeper subsurface are increasingly exploited. The accompanying perforation of the subsurface for those purposes has increased the risk of short-circuiting of originally separated aquifers. This study shows how this short-circuiting negatively impacts the freshwater recovery efficiency (RE) during aquifer storage and recovery (ASR) in coastal aquifers. ASR was applied in a shallow saltwater aquifer overlying a deeper, confined saltwater aquifer, which was targeted for seasonal aquifer thermal energy storage (ATES). Although both aquifers were considered properly separated (i.e., a continuous clay layer prevented rapid groundwater flow between both aquifers), intrusion of deeper saltwater into the shallower aquifer quickly terminated the freshwater recovery. The presumable pathway was a nearby ATES borehole. This finding was supported by field measurements, hydrochemical analyses, and variable-density solute transport modeling (SEAWAT version 4; Langevin et al., 2007). The potentially rapid short-circuiting during storage and recovery can reduce the RE of ASR to null. When limited mixing with ambient groundwater is allowed, a linear RE decrease by short-circuiting with increasing distance from the ASR well within the radius of the injected ASR bubble was observed. Interception of deep short-circuiting water can mitigate the observed RE decrease, although complete compensation of the RE decrease will generally be unattainable. Brackish water upconing from the underlying aquitard towards the shallow recovery wells of the ASR system with multiple partially penetrating wells (MPPW-ASR) was observed. This leakage may lead to a lower recovery efficiency than based on current ASR performance estimations.

Compensated count-rate circuit for radiation survey meter

DOEpatents

Todd, Richard A.

1981-01-01

A count-rate compensating circuit is provided which may be used in a portable Geiger-Mueller (G-M) survey meter to ideally compensate for counting loss errors in the G-M tube detector. In a G-M survey meter, wherein the pulse rate from the G-M tube is converted into a pulse rate current applied to a current meter calibrated to indicate dose rate, the compensated circuit generates and controls a reference voltage in response to the rate of pulses from the detector. This reference voltage is gated to the current-generating circuit at a rate identical to the rate of pulses coming from the detector so that the current flowing through the meter is varied in accordance with both the frequency and amplitude of the reference voltage pulses applied thereto so that the count rate is compensated ideally to indicate a true count rate within 1% up to a 50% duty cycle for the detector. A positive feedback circuit is used to control the reference voltage so that the meter output tracks true count rate indicative of the radiation dose rate.

Silicon device performance measurements to support temperature range enhancement

NASA Technical Reports Server (NTRS)

Bromstead, James; Weir, Bennett; Nelms, R. Mark; Johnson, R. Wayne; Askew, Ray

1994-01-01

Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.

Compensated count-rate circuit for radiation survey meter

DOEpatents

Todd, R.A.

1980-05-12

A count-rate compensating circuit is provided which may be used in a portable Geiger-Mueller (G-M) survey meter to ideally compensate for couting loss errors in the G-M tube detector. In a G-M survey meter, wherein the pulse rate from the G-M tube is converted into a pulse rate current applied to a current meter calibrated to indicate dose rate, the compensation circuit generates and controls a reference voltage in response to the rate of pulses from the detector. This reference voltage is gated to the current-generating circuit at a rate identical to the rate of pulses coming from the detector so that the current flowing through the meter is varied in accordance with both the frequency and amplitude of the reference voltage pulses applied thereto so that the count rate is compensated ideally to indicate a true count rate within 1% up to a 50% duty cycle for the detector. A positive feedback circuit is used to control the reference voltage so that the meter output tracks true count rate indicative of the radiation dose rate.

Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

NASA Astrophysics Data System (ADS)

Qu, Zilian; Meng, Yonggang; Zhao, Qian

2015-03-01

This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Shin, Hee-Sun; Lee, Won-Kyu; Park, Sang-Guen; Kuk, Seung-Hee; Han, Min-Koo

2009-03-01

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) pixel circuit for active-matrix organic light emission diodes (AM-OLEDs), which significantly compensates the OLED current degradation by memorizing the threshold voltage of driving TFT and suppresses the threshold voltage shift of a-Si:H TFTs by negative bias annealing, is proposed and fabricated. During the first half of each frame, the driving TFT of the proposed pixel circuit supplies current to the OLED, which is determined by modified data voltage in the compensation scheme. The proposed pixel circuit was able to compensate the threshold voltage shift of the driving TFT as well as the OLED. During the remaining half of each frame, the proposed pixel circuit induces the recovery of the threshold voltage degradation of a-Si:H TFTs owing to the negative bias annealing. The experimental results show that the proposed pixel circuit was able to successfully compensate for the OLED current degradation and suppress the threshold voltage degradation of the driving TFT.

Comparative performance analysis of shunt and series passive filter for LED lamp

NASA Astrophysics Data System (ADS)

Sarwono, Edi; Facta, Mochammad; Handoko, Susatyo

2018-03-01

Light Emitting Diode lamp or LED lamp nowadays is widely used by consumers as a new innovation in the lighting technologies due to its energy saving for low power consumption lamps for brighter light intensity. How ever, the LED lamp produce an electric pollutant known as harmonics. The harmonics is generated by rectifier as part of LED lamp circuit. The present of harmonics in current or voltage has made the source waveform from the grid is distorted. This distortion may cause inacurrate measurement, mall function, and excessive heating for any element at the grid. This paper present an analysis work of shunt and series filters to suppress the harmonics generated by the LED lamp circuit. The work was initiated by conducting several tests to investigate the harmonic content of voltage and currents. The measurements in this work were carried out by using HIOKI Power Quality Analyzer 3197. The measurement results showed that the harmonics current of tested LED lamps were above the limit of IEEE standard 519-2014. Based on the measurement results shunt and series filters were constructed as low pass filters. The bode analysis were appled during construction and prediction of the filters performance. Based on experimental results, the application of shunt filter at input side of LED lamp has reduced THD current up to 88%. On the other hand, the series filter has significantly reduced THD current up to 92%.

High power broadband millimeter wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1999-05-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed using this technology, and have been deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts to 50 kilowatts. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies other technologies will have to be considered particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

High Power Broadband Millimeter Wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1998-04-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed and deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts CW to 10 kilowatts Peak at W band over a 2 GHz bandwidth. Also a 50 kW peak power and 10 kW average power device at Ka band with 2 GHz bandwidth has been developed. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies, other technologies will have to be considered, particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

Spring Break: A Lesson in Circuits. "This Old House" College Style.

ERIC Educational Resources Information Center

Duch, Barbara

2001-01-01

Introduces students to the topics of electricity and circuits within the context of house wiring. Explores the properties of series and parallel circuits, researches local wiring codes, calculates the current used by appliances based on their power ratings, and designs circuits in a typical kitchen. (Author/ASK)

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

NASA Technical Reports Server (NTRS)

Buehler, M. G. (Inventor)

1985-01-01

An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

Analytical design equations for self-tuned Class-E power amplifier.

PubMed

Hu, Zhe; Troyk, Philip

2011-01-01

For many emerging neural prosthesis designs that are powered by inductive coupling, their small physical size requires large current in the extracorporeal transmitter coil, and the Class-E power amplifier topology is often used for the transmitter design. Tuning of Class-E circuits for efficient operation is difficult and a self-tuned circuit can facilitate the tuning. The coil current is sensed and used to tune the switching of the transistor switch in the Class-E circuit in order to maintain its high-efficiency operation. Although mathematically complex, the analysis and design procedure for the self-tuned Class-E circuit can be simplified due to the current feedback control, which makes the phase angle between the switching pulse and the coil current predetermined. In this paper explicit analytical design equations are derived and a detailed design procedure is presented and compared with the conventional Class-E design approaches.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

PubMed

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng; Zhou, Peng

2018-04-01

2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS 2 /GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM-based integrated circuits based on amplifier circuits.

Cross-contact chain

NASA Technical Reports Server (NTRS)

Lieneweg, Udo (Inventor)

1988-01-01

A system is provided for use with wafers that include multiple integrated circuits that include two conductive layers in contact at multiple interfaces. Contact chains are formed beside the integrated circuits, each contact chain formed of the same two layers as the circuits, in the form of conductive segments alternating between the upper and lower layers and with the ends of the segments connected in series through interfaces. A current source passes a current through the series-connected segments, by way of a pair of current tabs connected to opposite ends of the series of segments. While the current flows, voltage measurements are taken between each of a plurality of pairs of voltage tabs, the two tabs of each pair connected to opposite ends of an interface that lies along the series-connected segments. A plot of interface conductances on a normal probability chart, enables prediction of the yield of good integrated circuits from the wafer.

Cross-contact chain

NASA Technical Reports Server (NTRS)

Lieneweg, U. (Inventor)

1986-01-01

A system is provided for use with wafers that include multiple integrated circuits that include two conductive layers in contact at multiple interfaces. Contact chains are formed beside the integrated circuits, each contact chain formed of the same two layers as the circuits, in the form of conductive segments alternating between the upper and lower layers and with the ends of the segments connected in series through interfaces. A current source passes a current through the series-connected segments, by way of a pair of current tabs connected to opposite ends of the series of segments. While the current flows, voltage measurements are taken between each of a plurality of pairs of voltage tabs, the two tabs of each pair connected to opposite ends of an interface that lies along the series-connected segments. A plot of interface conductances on normal probability chart enables prediction of the yield of good integrated circuits from the wafer.

LINEAR COUNT-RATE METER

DOEpatents

Henry, J.J.

1961-09-01

A linear count-rate meter is designed to provide a highly linear output while receiving counting rates from one cycle per second to 100,000 cycles per second. Input pulses enter a linear discriminator and then are fed to a trigger circuit which produces positive pulses of uniform width and amplitude. The trigger circuit is connected to a one-shot multivibrator. The multivibrator output pulses have a selected width. Feedback means are provided for preventing transistor saturation in the multivibrator which improves the rise and decay times of the output pulses. The multivibrator is connected to a diode-switched, constant current metering circuit. A selected constant current is switched to an averaging circuit for each pulse received, and for a time determined by the received pulse width. The average output meter current is proportional to the product of the counting rate, the constant current, and the multivibrator output pulse width.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures

PubMed Central

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng

2018-01-01

Abstract 2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits. PMID:29721428

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yalong; Jones, Edward A.; Wang, Fred

Arm inductor in a modular multilevel converter (MMC) is used to limit the circulating current and dc short circuit fault current. The circulating current in MMC is dominated by second-order harmonic, which can be largely reduced with circulating current suppressing control. By analyzing the mechanism of the circulating current suppressing control, it is found that the circulating current at switching frequency becomes the main harmonic when suppression control is implemented. Unlike the second-order harmonic that circulates only within the three phases, switching frequency harmonic also flows through the dc side and may further cause high-frequency dc voltage harmonic. This articlemore » develops the theoretical relationship between the arm inductance and switching frequency circulating current, which can be used to guide the arm inductance selection. The experimental results with a downscaled MMC prototype verify the existence of the switching frequency circulating current and its relationship with arm inductance.« less

Design and status of the RF-digitizer integrated circuit

NASA Technical Reports Server (NTRS)

Rayhrer, B.; Lam, B.; Young, L. E.; Srinivasan, J. M.; Thomas, J. B.

1991-01-01

An integrated circuit currently under development samples a bandpass-limited signal at a radio frequency in quadrature and then performs a simple sum-and-dump operation in order to filter and lower the rate of the samples. Downconversion to baseband is carried out by the sampling step itself through the aliasing effect of an appropriately selected subharmonic sampling frequency. Two complete RF digitizer circuits with these functions will be implemented with analog and digital elements on one GaAs substrate. An input signal, with a carrier frequency as high as 8 GHz, can be sampled at a rate as high as 600 Msamples/sec for each quadrature component. The initial version of the chip will sign-sample (1-bit) the input RF signal. The chip will contain a synthesizer to generate a sample frequency that is a selectable integer multiple of an input reference frequency. In addition to the usual advantages of compactness and reliability associated with integrated circuits, the single chip will replace several steps required by standard analog downconversion. Furthermore, when a very high initial sample rate is selected, the presampling analog filters can be given very large bandwidths, thereby greatly reducing phase and delay instabilities typically introduced by such filters, as well as phase and delay variation due to Doppler changes.

Gm-Realization of Controlled-Gain Current Follower Transconductance Amplifier

PubMed Central

Tangsrirat, Worapong

2013-01-01

This paper describes the conception of the current follower transconductance amplifier (CFTA) with electronically and linearly current tunable. The newly modified element is realized based on the use of transconductance cells (G m s) as core circuits. The advantage of this element is that the current transfer ratios (i z/i p and i x/i z) can be tuned electronically and linearly by adjusting external DC bias currents. The circuit is designed and analyzed in 0.35 μm TSMC CMOS technology. Simulation results for the circuit with ±1.25 V supply voltages show that it consumes only 0.43 mw quiescent power with 70 MHz bandwidth. As an application example, a current-mode KHN biquad filter is designed and simulated. PMID:24381513

Surface-Charge-Based Micro-Models--A Solid Foundation for Learning about Direct Current Circuits

ERIC Educational Resources Information Center

Hirvonen, P. E.

2007-01-01

This study explores how the use of a surface-charge-based instructional approach affects introductory university level students' understanding of direct current (dc) circuits. The introduced teaching intervention includes electrostatics, surface-charge-based micro-models that explain the existence of an electric field inside the current-carrying…

Progress Check Module; Basic Electricity and Electronics Individualized Learning System. Progress Check Booklet.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The Progress Check Booklet is designed to be used by the student working in the programed course to determine if he has mastered the concepts in the course booklets on: electrical current; voltage; resistance; measuring current and voltage in series circuits; relationships of current, voltage, and resistance; parellel circuits; combination…

Circuit For Current-vs.-Voltage Tests Of Semiconductors

NASA Technical Reports Server (NTRS)

Huston, Steven W.

1991-01-01

Circuit designed for measurement of dc current-versus-voltage characteristics of semiconductor devices. Operates in conjunction with x-y pen plotter or digital storage oscilloscope, which records data. Includes large feedback resistors to prevent high currents damaging device under test. Principal virtues: low cost, simplicity, and compactness. Also used to evaluate diodes and transistors.

Demodulation circuit for AC motor current spectral analysis

DOEpatents

Hendrix, Donald E.; Smith, Stephen F.

1990-12-18

A motor current analysis method for the remote, noninvasive inspection of electric motor-operated systems. Synchronous amplitude demodulation and phase demodulation circuits are used singly and in combination along with a frequency analyzer to produce improved spectral analysis of load-induced frequencies present in the electric current flowing in a motor-driven system.

Analog circuit for controlling acoustic transducer arrays

DOEpatents

Drumheller, Douglas S.

1991-01-01

A simplified ananlog circuit is presented for controlling electromechanical transducer pairs in an acoustic telemetry system. The analog circuit of this invention comprises a single electrical resistor which replaces all of the digital components in a known digital circuit. In accordance with this invention, a first transducer in a transducer pair of array is driven in series with the resistor. The voltage drop across this resistor is then amplified and used to drive the second transducer. The voltage drop across the resistor is proportional and in phase with the current to the transducer. This current is approximately 90 degrees out of phase with the driving voltage to the transducer. This phase shift replaces the digital delay required by the digital control circuit of the prior art.

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

NASA Astrophysics Data System (ADS)

Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T.

2014-09-01

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

Josephson junction in the quantum mesoscopic electric circuits with charge discreteness

NASA Astrophysics Data System (ADS)

Pahlavani, H.

2018-04-01

A quantum mesoscopic electrical LC-circuit with charge discreteness including a Josephson junction is considered and a nonlinear Hamiltonian that describing the dynamic of such circuit is introduced. The quantum dynamical behavior (persistent current probability) is studied in the charge and phase regimes by numerical solution approaches. The time evolution of charge and current, number-difference and the bosonic phase and also the energy spectrum of a quantum mesoscopic electric LC-circuit with charge discreteness that coupled with a Josephson junction device are investigated. We show the role of the coupling energy and the electrostatic Coulomb energy of the Josephson junction in description of the quantum behavior and the spectral properties of a quantum mesoscopic electrical LC-circuits with charge discreteness.

Synaptic noise is an information bottleneck in the inner retina during dynamic visual stimulation

PubMed Central

Freed, Michael A; Liang, Zhiyin

2014-01-01

In daylight, noise generated by cones determines the fidelity with which visual signals are initially encoded. Subsequent stages of visual processing require synapses from bipolar cells to ganglion cells, but whether these synapses generate a significant amount of noise was unknown. To characterize noise generated by these synapses, we recorded excitatory postsynaptic currents from mammalian retinal ganglion cells and subjected them to a computational noise analysis. The release of transmitter quanta at bipolar cell synapses contributed substantially to the noise variance found in the ganglion cell, causing a significant loss of fidelity from bipolar cell array to postsynaptic ganglion cell. Virtually all the remaining noise variance originated in the presynaptic circuit. Circuit noise had a frequency content similar to noise shared by ganglion cells but a very different frequency content from noise from bipolar cell synapses, indicating that these synapses constitute a source of independent noise not shared by ganglion cells. These findings contribute a picture of daylight retinal circuits where noise from cones and noise generated by synaptic transmission of cone signals significantly limit visual fidelity. PMID:24297850

Ethanol and silver effects on ion transport across toad skin.

PubMed

Gerencser, G A; Loo, S Y; Cornette, K M

1985-01-01

Silver stimulated short-circuit current and transepithelial potential difference. Ethanol inhibited transpithelial potential difference. Ethanol had no effect on short-circuit current. Ethanol stimulated unidirectional movements of chloride from outside to inside and from inside to outside.

Design of laser diode driver with constant current and temperature control system

NASA Astrophysics Data System (ADS)

Wang, Ming-cai; Yang, Kai-yong; Wang, Zhi-guo; Fan, Zhen-fang

2017-10-01

A laser Diode (LD) driver with constant current and temperature control system is designed according to the LD working characteristics. We deeply researched the protection circuit and temperature control circuit based on thermos-electric cooler(TEC) cooling circuit and PID algorithm. The driver could realize constant current output and achieve stable temperature control of LD. Real-time feedback control method was adopted in the temperature control system to make LD work on its best temperature point. The output power variety and output wavelength shift of LD caused by current and temperature instability were decreased. Furthermore, the driving current and working temperature is adjustable according to specific requirements. The experiment result showed that the developed LD driver meets the characteristics of LD.

Students' understanding of direct current resistive electrical circuits

NASA Astrophysics Data System (ADS)

Engelhardt, Paula Vetter; Beichner, Robert J.

2004-01-01

Both high school and university students' reasoning regarding direct current resistive electric circuits often differ from the accepted explanations. At present, there are no standard diagnostic tests on electric circuits. Two versions of a diagnostic instrument were developed, each consisting of 29 questions. The information provided by this test can provide instructors with a way of evaluating the progress and conceptual difficulties of their students. The analysis indicates that students, especially females, tend to hold multiple misconceptions, even after instruction. During interviews, the idea that the battery is a constant source of current was used most often in answering the questions. Students tended to focus on the current in solving problems and to confuse terms, often assigning the properties of current to voltage and/or resistance.