Caracterisation des mecanismes d'usure en cavitation de revetements HVOF a base de CaviTec

NASA Astrophysics Data System (ADS)

Lavigne, Sebastien

The increasing demand for high performance power conversion systems continuously pushes for improvement in efficiency and power density. This dissertation focuses on a topological effort to efficiently utilize the active and passive devices. In particular, a hybrid approach is adopted, where both capacitors and inductors are used in the voltage conversion and power transfer process. Conventional capacitor-based converters, called switched-capacitor (SC) converters, suffer from poor efficiency due to the inevitable charge redistribution process. With a strategic placement of one or more inductors, the charge redistribution loss can be eliminated by inductively charging/discharging the capacitors, a process called soft-charging operation. As a result, the capacitor size can be greatly reduced without reducing the efficiency. A general analytical framework is presented, which determines whether an arbitrary SC topology is able to achieve full soft-charging operation with a single inductor. For topologies that cannot, a split-phase control technique is introduced, which amends existing two-phase controls to completely eliminate the charge redistribution loss. In addition, alternative placements of inductors are explored to extend the family of hybrid converters. The hybrid converters can have two modes of operation, the fixed-ratio mode and pulse width modulated (PWM) mode. The fixed-conversion-ratio hybrid converters operate in a similar manner to that of a conventional SC converter, with the addition of a soft-charging inductor. The switching frequency of such converters can be adjusted to operate in either zero current switching (ZCS) mode or continuous conduction mode (CCM), which allows for the trade-off of switching loss and conduction loss. It is shown that the capacitor and inductor values can be selected to achieve a minimal passive component volume, which can be significantly smaller than that of a conventional SC converter or a magnetic-based converter. On the other hand, PWM-based hybrid converters generate a PWM rectangular wave as the terminal voltage to the inductor, similar to the operation of a buck converter. In contrast to conventional SC converters, such hybrid converters can achieve lossless and continuous regulation of the output voltage. Compared to buck converters, the required inductor is greatly reduced, as well as the switch stress. A 80-170 V input, 12-24 V output prototype PWM Dickson converter is implemented using GaN switches. The measured peak efficiency is 97%, and high efficiency can be maintained over the entire input and output operating range. In addition, the similarity between multilevel converters (for example, flying capacitor multilevel (FCML) converters) and the PWM-based hybrid SC converters is discussed. Both types of converters can be seen as a hybrid converter which uses both capacitors and inductors for energy transfer. A general framework to compare these converters, along with conventional buck converters, is proposed. In this framework, the power losses (including conduction loss and switching loss) are kept constant, while the total passive component volume is used as the figure of merit. Based on the principle of maximizing energy utilization of passive components, a 7-level FCML converter and an active energy buffer are designed and implemented for single phase dc-ac applications. In addition, the stand-alone system includes a start-up circuitry, EMC filter and auxiliary power supply. The enclosed box achieves a combined power density of 216 W/in3 and an efficiency of 97.4%, and compares favorably against the state-of-the-art designs under the same specification. To further improve the efficiency and power density, soft-switching techniques are investigated and applied on the hybrid converters. A zero voltage switching (ZVS) technique is introduced for both the fixed-ratio mode and the PWM mode operated hybrid converters. The previous hardware prototypes are modified for ZVS operation, and prove the feasibility of simultaneous soft-charging and soft-switching operation. Last but not the least, some of the practical issues associated with the hybrid converter are discussed, such as practical capacitor selection, capacitor voltage balancing and other circuit implementation challenges. Future work based on these topics is given. In summary, these hybrid converters are suited for applications where extreme efficiency and power density are critical. Through efficient utilization of active and passive devices, the hybrid topologies can offer a greater optimization opportunity and ability to take advantage of technology improvement than is possible with conventional designs.

Oxidation of Ultra High Temperature Ceramics in Water Vapor

NASA Technical Reports Server (NTRS)

Nguyen, QuynhGiao N.; Opila, Elizabeth J.; Robinson, Raymond C.

2004-01-01

Ultra High Temperature Ceramics (UHTCs) including HfB2 + 20v/0 SiC (HS), ZrB2 + 20v/0 SiC (ZS), and ZrB2 + 30v/0 C + 14v/0 SiC (ZCS) have been investigated for use as potential aeropropulsion engine materials. These materials were oxidized in water vapor (90 percent) using a cyclic vertical furnace at 1 atm. The total exposure time was 10 h at temperatures of 1200, 1300, and 1400 C. CVD SiC was also evaluated as a baseline for comparison. Weight change, X-ray diffraction analyses, surface and cross-sectional SEM and EDS were performed. These results are compared with tests ran in a stagnant air furnace at temperatures of 1327 C for 100 min, and with high pressure burner rig (HPBR) results at 1100 and 1300 C at 6 atm for 50 h. Low velocity water vapor does not make a significant contribution to the oxidation rates of UHTCs when compared to stagnant air. The parabolic rate constants at 1300 C, range from 0.29 to 16.0 mg(sup 2)cm(sup 4)/h for HS and ZCS, respectively, with ZS results between these two values. Comparison of results for UHTCs tested in the furnace in 90 percent water vapor with HPBR results was difficult due to significant sample loss caused by spallation in the increased velocity of the HPBR. Total recession measurements are also reported for the two test environments.

Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

DOEpatents

Mar, Alan [Albuquerque, NM; Zutavern, Fred J [Albuquerque, NM; Loubriel, Guillermo [Albuquerque, NM

2007-02-06

An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

Method and system for operating an electric motor

DOEpatents

Gallegos-Lopez, Gabriel; Hiti, Silva; Perisic, Milun

2013-01-22

Methods and systems for operating an electric motor having a plurality of windings with an inverter having a plurality of switches coupled to a voltage source are provided. A first plurality of switching vectors is applied to the plurality of switches. The first plurality of switching vectors includes a first ratio of first magnitude switching vectors to second magnitude switching vectors. A direct current (DC) current associated with the voltage source is monitored during the applying of the first plurality of switching vectors to the plurality of switches. A second ratio of the first magnitude switching vectors to the second magnitude switching vectors is selected based on the monitoring of the DC current associated with the voltage source. A second plurality of switching vectors is applied to the plurality of switches. The second plurality of switching vectors includes the second ratio of the first magnitude switching vectors to the second magnitude switching vectors.

Gate drive latching circuit for an auxiliary resonant commutation circuit

NASA Technical Reports Server (NTRS)

Delgado, Eladio Clemente (Inventor); Kheraluwala, Mustansir Hussainy (Inventor)

1999-01-01

A gate drive latching circuit for an auxiliary resonant commutation circuit for a power switching inverter includes a current monitor circuit providing a current signal to a pair of analog comparators to implement latching of one of a pair of auxiliary switching devices which are used to provide commutation current for commutating switching inverters in the circuit. Each of the pair of comparators feeds a latching circuit which responds to an active one of the comparators for latching the associated gate drive circuit for one of the pair of auxiliary commutating switches. An initial firing signal is applied to each of the commutating switches to gate each into conduction and the resulting current is monitored to determine current direction and therefore the one of the switches which is carrying current. The comparator provides a latching signal to the one of the auxiliary power switches which is actually conducting current and latches that particular power switch into an on state for the duration of current through the device. The latching circuit is so designed that the only time one of the auxiliary switching devices can be latched on is during the duration of an initial firing command signal.

Fast and efficient STT switching in MTJ using additional transient pulse current

NASA Astrophysics Data System (ADS)

Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

2017-06-01

We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

Hybrid switch for resonant power converters

DOEpatents

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

High accuracy switched-current circuits using an improved dynamic mirror

NASA Technical Reports Server (NTRS)

Zweigle, G.; Fiez, T.

1991-01-01

The switched-current technique, a recently developed circuit approach to analog signal processing, has emerged as an alternative/compliment to the well established switched-capacitor circuit technique. High speed switched-current circuits offer potential cost and power savings over slower switched-capacitor circuits. Accuracy improvements are a primary concern at this stage in the development of the switched-current technique. Use of the dynamic current mirror has produced circuits that are insensitive to transistor matching errors. The dynamic current mirror has been limited by other sources of error including clock-feedthrough and voltage transient errors. In this paper we present an improved switched-current building block using the dynamic current mirror. Utilizing current feedback the errors due to current imbalance in the dynamic current mirror are reduced. Simulations indicate that this feedback can reduce total harmonic distortion by as much as 9 dB. Additionally, we have developed a clock-feedthrough reduction scheme for which simulations reveal a potential 10 dB total harmonic distortion improvement. The clock-feedthrough reduction scheme also significantly reduces offset errors and allows for cancellation with a constant current source. Experimental results confirm the simulated improvements.

High-voltage, high-current, solid-state closing switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

DC switching regulated power supply for driving an inductive load

DOEpatents

Dyer, George R.

1986-01-01

A power supply for driving an inductive load current from a dc power supply hrough a regulator circuit including a bridge arrangement of diodes and switching transistors controlled by a servo controller which regulates switching in response to the load current to maintain a selected load current. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. The regulator may be operated in three "stages" or modes: (1) For current runup in the load, both first and second transistor switch arrays are turned "on" and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned "off", and load current "flywheels" through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays "off", allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load. The three operating states are controlled automatically by the controller.

Method and system for a gas tube-based current source high voltage direct current transmission system

DOEpatents

She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di

2017-08-29

A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.

The role of satisfaction and switching costs in Medicare Part D choices.

PubMed

Han, Jayoung; Ko, Dong Woo; Urmie, Julie M

2014-01-01

Most U.S. states had over 50 Medicare Prescription Drug Plans (PDPs) in 2007. Medicare beneficiaries are expected to switch Part D plans based on their health and financial needs; however, the switching rate has been low. Such consumer inertia potentially has negative effects on both beneficiaries and the insurance market, resulting in a critical need to investigate its cause. To 1) describe how Medicare beneficiaries who were satisfied with their current Part D plan differed from those who were not satisfied; 2) examine the effect of switching costs on consideration of switching among Medicare beneficiaries who were dissatisfied with their current Part D plan. Data from the 2007 Prescription Drug Study supplement to the Health and Retirement Study (HRS) survey were used in this study. The satisfied and dissatisfied groups were compared in terms of cost variables, switching costs, and perception of Part D complexity. Structural equation modeling was used to examine relationships among switching costs, Part D complexity, cost variables, and consideration of switching for beneficiaries who were dissatisfied with their current Part D coverage. Out of 467 participants, a total of 255 (54.6%) were satisfied with their current Part D plan. The satisfied group paid lower out-of-pocket costs ($50.63 vs. $114.60) and premiums ($30.88 vs. $40.77) than the dissatisfied group. They also had lower switching costs. Only 11.3% of the dissatisfied beneficiaries switched plans. Among respondents who were dissatisfied with their current plan, those who perceived Part D as complex had high switching costs and were less likely to consider switching plans. Out-of-pocket cost did not have a statistically significant association with consideration of switching. Medicare beneficiaries who were satisfied with their current Part D plans had lower out-of-pocket costs and premiums as well as higher switching costs. Among beneficiaries who were dissatisfied with their current Part D plan, those who had higher switching costs were less likely to consider switching Part D plans. Copyright © 2014 Elsevier Inc. All rights reserved.

DC switching regulated power supply for driving an inductive load

DOEpatents

Dyer, G.R.

1983-11-29

A dc switching regulated power supply for driving an inductive load is provided. The regulator basic circuit is a bridge arrangement of diodes and transistors. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. A dc power supply is connected to the input of the bridge and the output is connected to the load. A servo controller is provided to control the switching rate of the transistors to maintain a desired current to the load. The regulator may be operated in three stages or modes: (1) for current runup in the load, both first and second transistor switch arrays are turned on and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned off, and load current flywheels through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays off, allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load.

Simulation study of a new inverse-pinch high Coulomb transfer switch

NASA Technical Reports Server (NTRS)

Choi, S. H.

1984-01-01

A simulation study of a simplified model of a high coulomb transfer switch is performed. The switch operates in an inverse pinch geometry formed by an all metal chamber, which greatly reduces hot spot formations on the electrode surfaces. Advantages of the switch over the conventional switches are longer useful life, higher current capability and lower inductance, which improves the characteristics required for a high repetition rate switch. The simulation determines the design parameters by analytical computations and comparison with the experimentally measured risetime, current handling capability, electrode damage, and hold-off voltages. The parameters of initial switch design can be determined for the anticipated switch performance. Results are in agreement with the experiment results. Although the model is simplified, the switch characteristics such as risetime, current handling capability, electrode damages, and hold-off voltages are accurately determined.

Novel zero voltage transition pulse width modulation flyback converter

NASA Astrophysics Data System (ADS)

Adib, Ehsan; Farzanehfard, Hosein

2010-09-01

In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

Current interruption in inductive storage systems with inertial current source

NASA Astrophysics Data System (ADS)

Vitkovitsky, I. M.; Conte, D.; Ford, R. D.; Lupton, W. H.

1980-03-01

Utilization of inertial current source inductive storage with high power output requires a switch with short opening time. This switch must operate as a circuit breaker, i.e., be capable to carry the current for a time period characteristic of inertial systems, such as homopolar generators. For reasonable efficiency, its opening time must be fast to minimize the energy dissipated in downstream fuse stages required for any additional pulse compression. A switch that satisfies these criteria, as well as other requirements such as that for high voltage operation associated with high power output, is an explosively driven switch consisting of large number of gaps arranged in series. The performance of this switch in limiting and/or interrupting currents produced by large generators has been studied. Single switch modules were designed and tested for limiting the commutating current output of 1 MW, 60 Hz, generator and 500 KJ capacitor banks. Current limiting and commutation were evaluated, using these sources, for currents ranging up to 0.4 MA. The explosive opening of the switch was found to provide an effective first stage for further pulse compression. It opens in tens of microseconds, commutates current at high efficiency ( = 905) recovers very rapidly over a wide range of operating conditions.

Current Source Logic Gate

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

2017-01-01

A current source logic gate with depletion mode field effect transistor ("FET") transistors and resistors may include a current source, a current steering switch input stage, and a resistor divider level shifting output stage. The current source may include a transistor and a current source resistor. The current steering switch input stage may include a transistor to steer current to set an output stage bias point depending on an input logic signal state. The resistor divider level shifting output stage may include a first resistor and a second resistor to set the output stage point and produce valid output logic signal states. The transistor of the current steering switch input stage may function as a switch to provide at least two operating points.

Time and spatial evolution of spin-orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes

NASA Astrophysics Data System (ADS)

Zhang, Chaoliang; Fukami, Shunsuke; DuttaGupta, Samik; Sato, Hideo; Ohno, Hideo

2018-04-01

We study spin-orbit torque (SOT) switching in W/CoFeB/MgO structures with various dot sizes (120-3500 nm) using pulsed current of various widths τ (800 ps-100 ms) to examine the time and spatial evolution of magnetization switching. We show that the switching behavior and the resultant threshold switching current density J th strongly depend on device size and pulse width. The switching mode in a 3500 nm dot device changes from probabilistic switching to reproducible partial switching as τ decreases. At τ = 800 ps, J th becomes more than 3 times larger than that in the long-pulse regime. A decrease in dot size to 700 nm does not significantly change the switching characteristics, suggesting that domain-wall propagation among the nucleated multiple domains governs switching. In contrast, devices with further reduced size (120 nm) show normal full switching with increasing probability with current and insignificant dependence of J th on τ, indicating that nucleation governs switching.

Power-Switching Circuit

NASA Technical Reports Server (NTRS)

Praver, Gerald A.; Theisinger, Peter C.; Genofsky, John

1987-01-01

Functions of circuit breakers, meters, and switches combined. Circuit that includes power field-effect transistors (PFET's) provides on/off switching, soft starting, current monitoring, current tripping, and protection against overcurrent for 30-Vdc power supply at normal load currents up to 2 A. Has no moving parts.

Analysis of reliable sub-ns spin-torque switching under transverse bias magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'Aquino, M., E-mail: daquino@uniparthenope.it; Perna, S.; Serpico, C.

2015-05-07

The switching process of a magnetic spin-valve nanosystem subject to spin-polarized current pulses is considered. The dependence of the switching probability on the current pulse duration is investigated. The further application of a transverse field along the intermediate anisotropy axis of the particle is used to control the quasi-random relaxation of magnetization to the reversed magnetization state. The critical current amplitudes to realize the switching are determined by studying the phase portrait of the Landau-Lifshtz-Slonczewski dynamics. Macrospin numerical simulations are in good agreement with the theoretical prediction and demonstrate reliable switching even for very short (below 100 ps) current pulses.

A fault-tolerant strategy based on SMC for current-controlled converters

NASA Astrophysics Data System (ADS)

Azer, Peter M.; Marei, Mostafa I.; Sattar, Ahmed A.

2018-05-01

The sliding mode control (SMC) is used to control variable structure systems such as power electronics converters. This paper presents a fault-tolerant strategy based on the SMC for current-controlled AC-DC converters. The proposed SMC is based on three sliding surfaces for the three legs of the AC-DC converter. Two sliding surfaces are assigned to control the phase currents since the input three-phase currents are balanced. Hence, the third sliding surface is considered as an extra degree of freedom which is utilised to control the neutral voltage. This action is utilised to enhance the performance of the converter during open-switch faults. The proposed fault-tolerant strategy is based on allocating the sliding surface of the faulty leg to control the neutral voltage. Consequently, the current waveform is improved. The behaviour of the current-controlled converter during different types of open-switch faults is analysed. Double switch faults include three cases: two upper switch fault; upper and lower switch fault at different legs; and two switches of the same leg. The dynamic performance of the proposed system is evaluated during healthy and open-switch fault operations. Simulation results exhibit the various merits of the proposed SMC-based fault-tolerant strategy.

Formation and disruption of current paths of anodic porous alumina films by conducting atomic force microscopy

NASA Astrophysics Data System (ADS)

Oyoshi, K.; Nigo, S.; Inoue, J.; Sakai, O.; Kitazawa, H.; Kido, G.

2010-11-01

Anodic porous alumina (APA) films have a honeycomb cell structure of pores and a voltage-induced bi-stable switching effect. We have applied conducting atomic force microscopy (CAFM) as a method to form and to disrupt current paths in the APA films. A bi-polar switching operation was confirmed. We have firstly observed terminals of current paths as spots or areas typically on the center of the triangle formed by three pores. In addition, though a part of the current path showed repetitive switching, most of them were not observed again at the same position after one cycle of switching operations in the present experiments. This suggests that a part of alumina structure and/or composition along the current paths is modified during the switching operations.

Strong Orientation-Dependent Spin-Orbit Torque in Thin Films of the Antiferromagnet Mn2Au

NASA Astrophysics Data System (ADS)

Zhou, X. F.; Zhang, J.; Li, F.; Chen, X. Z.; Shi, G. Y.; Tan, Y. Z.; Gu, Y. D.; Saleem, M. S.; Wu, H. Q.; Pan, F.; Song, C.

2018-05-01

Antiferromagnets with zero net magnetic moment, strong anti-interference, and ultrafast switching speed are potentially competitive in high-density information storage. The body-centered tetragonal antiferromagnet Mn2Au with opposite-spin sublattices is a unique metallic material for Néel-order spin-orbit-torque (SOT) switching. We investigate the SOT switching in quasiepitaxial (103), (101) and (204) Mn2Au films prepared by a simple magnetron sputtering method. We demonstrate current-induced antiferromagnetic moment switching in all of the prepared Mn2Au films by using a short current pulse at room temperature, whereas differently oriented films exhibit distinguished switching characters. A direction-independent reversible switching is attained in Mn2Au (103) films due to negligible magnetocrystalline anisotropy energy, while for Mn2Au (101) and (204) films, the switching is invertible with the current applied along the in-plane easy axis and its vertical axis, but it becomes attenuated seriously during initial switching circles when the current is applied along the hard axis because of the existence of magnetocrystalline anisotropy energy. Besides the fundamental significance, the strong orientation-dependent SOT switching, which is not realized, irrespective of ferromagnet and antiferromagnet, provides versatility for spintronics.

Arc-Free High-Power dc Switch

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Hybrid switch allows high-power direct current to be turned on and off without arcing or erosion. Switch consists of bank of transistors in parallel with mechanical contacts. Transistor bank makes and breaks switched circuit; contacts carry current only during steady-state "on" condition. Designed for Space Shuttle orbiter, hybrid switch can be used also in high-power control circuits in aircraft, electric autos, industrial furnaces, and solar-cell arrays.

A complete dc characterization of a constant-frequency, clamped-mode, series-resonant converter

NASA Technical Reports Server (NTRS)

Tsai, Fu-Sheng; Lee, Fred C.

1988-01-01

The dc behavior of a clamped-mode series-resonant converter is characterized systematically. Given a circuit operating condition, the converter's mode of operation is determined and various circuit parameters are calculated, such as average inductor current (load current), rms inductor current, peak capacitor voltage, rms switch currents, average diode currents, switch turn-on currents, and switch turn-off currents. Regions of operation are defined, and various circuit characteristics are derived to facilitate the converter design.

Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

PubMed

Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

2015-07-08

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor); Ashtiani, Cyrus N. (Inventor)

2008-01-01

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Hyun-Sang; Jeon, Jae-Hong; Han, Min-Koo

2008-03-01

We have proposed a new poly-Si TFT pixel, which can suppress TFT leakage current effect on active matrix organic diode (AMOLED) displays, by employing a new circular switching TFT and additional signal line for compensating the leakage current. When the leakage current of switching TFT is increased, the VGS of the current driving TFT in the proposed pixel is not altered by the variable data voltages due to the circular switching TFT. Our simulation results show that OLED current variation of the proposed pixel can be suppressed less than 3%, while that of conventional pixel exceeds 30%. The proposed pixel may be suitable to suppress the leakage current effect on AMOLED display.

Studies of current-perpendicular-to-plane magnetoresistance (CPP-MR) and current-induced magnetization switching (CIMS)

NASA Astrophysics Data System (ADS)

Kurt, Huseyin

2005-08-01

We present two CPP-MR studies of spin-valves based upon ferromagnetic/nonmagnetic/ferromagnetic (F/N/F) trilayers. We measure the spin-diffusion lengths of N = Pd, Pt, and Au at 4.2K, and both the specific resistances (sample area A times resistance R) and spin-memory-loss of N/Cu interfaces. Pd, Pt and Au are of special device interest because they give perpendicular anisotropy when sandwiching very thin Co layers. Comparing our spin-memory-loss data at Pd/Cu and Pt/Cu interfaces with older data for Nb/Cu and W/Cu gives insight into the importance of spin-orbit coupling in producing such loss. We reproduce and extend prior studies by Eid of 'magnetic activity' at the interface of Co and N-metals (or combinations of N-metals), when the other side of the N-metal contacts a superconductor (S). Our data suggest that magnetic activity may require strong spin-flipping at the N/S interface. We present five studies of a new phenomenon, CIMS, in F1/N/F2 trilayers, with F1 a thick 'polarizing' layer and F2 a thin 'switching' layer. In all prior studies of CIMS, positive current caused the magnetization of F2 to switch from parallel (P) to anti-parallel (AP) to that of F1- 'normal' switching. By judicious addition of impurities to F-metals, we are able to controllably produce both 'normal' and 'inverse' switching- where positive current switches the magnetization of F2 from AP to P to that of F1. In the samples studied, whether the switching is normal or inverse is set by the 'net polarization' produced by F1 and is independent of the properties of F2. As scattering in the bulk of F1 and F2 is essential to producing our results, these results cannot be described by ballistic models, which allow scattering only at interfaces. Most CIMS experiments use Cu as the N-layer due to its low resistivity and long spin-diffusion length. We show that Ag and Au have low enough resistivities and long enough spin-diffusion lengths to be useful alternatives to Cu for some devices. While most technical applications of CIMS require low switching currents, some, like read-heads, require high switching currents. We show that use of a synthetic antiferromagnet can increase the switching current. Manschot et al. recently predicted that the positive critical current for switching from P to AP could be reduced by up to a factor of five by using asymmetric current leads. In magnetically uncoupled samples, we find that highly asymmetric current leads do not significantly reduce the switching current. A CIMS equation given by Katine et al. predicts that lowering the demagnetization field should reduce the switching current. To test this prediction, we compare switching currents for Co/Au/Co(t)/Au nanopillars with t = 1 to 4 nm (where the easy axis should be normal to the layer planes at least for t = 1 and 2 nm) with those for Co/Cu/Co(t)/Au nanopillars (where the easy axis should be in the layer planes). We do not find significant differences in switching currents for the two systems.

AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster

NASA Astrophysics Data System (ADS)

Han, Sang-Woo; Jo, Min-Gi; Kim, Hyungtak; Cho, Chun-Hyung; Cha, Ho-Young

2017-08-01

This study investigates the effects of a monolithic gate current booster integrated with an AlGaN/GaN-on-Si power-switching device. The integrated gate current booster was implemented by a single-stage inverter topology consisting of a recessed normally-off AlGaN/GaN MOS-HFET and a mesa resistor. The monolithically integrated gate current booster in a switching FET eliminated the parasitic elements caused by external interconnection and enabled fast switching operation. The gate charging and discharging currents were boosted by the integrated inverter, which significantly reduced both rise and fall times: the rise time was reduced from 626 to 41.26 ns, while the fall time was reduced from 554 to 42.19 ns by the single-stage inverter. When the packaged monolithic power chip was tested under 1 MHz hard-switching operation with VDD = 200 V, the switching loss was found to have been drastically reduced, from 5.27 to 0.55 W.

Spin-orbit torque-induced switching in ferrimagnetic alloys: Experiments and modeling

NASA Astrophysics Data System (ADS)

Je, Soong-Geun; Rojas-Sánchez, Juan-Carlos; Pham, Thai Ha; Vallobra, Pierre; Malinowski, Gregory; Lacour, Daniel; Fache, Thibaud; Cyrille, Marie-Claire; Kim, Dae-Yun; Choe, Sug-Bong; Belmeguenai, Mohamed; Hehn, Michel; Mangin, Stéphane; Gaudin, Gilles; Boulle, Olivier

2018-02-01

We investigate spin-orbit torque (SOT)-induced switching in rare-earth-transition metal ferrimagnetic alloys using W/CoTb bilayers. The switching current is found to vary continuously with the alloy concentration, and no reduction in the switching current is observed at the magnetic compensation point despite a very large SOT efficiency. A model based on coupled Landau-Lifschitz-Gilbert (LLG) equations shows that the switching current density scales with the effective perpendicular anisotropy which does not exhibit strong reduction at the magnetic compensation, explaining the behavior of the switching current density. This model also suggests that conventional SOT effective field measurements do not allow one to conclude whether the spins are transferred to one sublattice or just simply to the net magnetization. The effective spin Hall angle measurement shows an enhancement of the spin Hall angle with the Tb concentration which suggests an additional SOT contribution from the rare earth Tb atoms.

Switched-capacitor isolated LED driver

DOEpatents

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

Characteristics of switching plasma in an inverse-pinch switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Venable, Demetrius D.; Han, Kwang S.; Nam, Sang H.

1993-01-01

Characteristics of the plasma that switches on tens of giga volt-ampere in an inverse-pinch plasma switch (INPIStron) have been made. Through optical and spectroscopic diagnostics of the current carrying plasma, the current density, the motion of current paths, dominant ionic species have been determined in order to access their effects on circuit parameters and material erosion. Also the optimum operational condition of the plasma-puff triggering method required for azimuthally uniform conduction in the INPIStron has been determined.

SEPP-ZVS High Frequency Inverter Incorporating Auxiliary Switch

NASA Astrophysics Data System (ADS)

Ogiwara, Hiroyuki; Itoi, Misao; Nakaoka, Mutsuo

This paper presents a novel circuit topology to attain ZVS operation of a high frequency inverter over a wide range output power regulation using a PWM control technique by connecting an auxiliary switch to the conventional single ended push-pull (SEPP) ZVS high frequency inverter. A switching current is injected into the main switches via the auxiliary switch only during the short period between its turn-on and off times to supply a current required for its ZVS operation.

Optically triggered high voltage switch network and method for switching a high voltage

DOEpatents

El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

Low pressure switches and magnetic switches were tested as possible replacements for the high pressure switches currently used on Experimental Test Accelerator and Advanced Test Accelerator. When the low pressure switch is used with a low impedance transmission line, runaway electrons form a pinched electron beam which damages the anode. The use of the low pressure switch as the first switch in the pulsed power chain was tested; i.e., the switch would be used to connect a charged capacitor across the primary winding of a step up transformer. An inductor with a saturating core is connected in series so that, initially, there is a large inductive voltage drop. As a result, there is small voltage across the switch. By the time the inductor core saturates, the switch has developed sufficient ionization so that the switch voltage remains small, even with peak current, and an electron beam is not produced.

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.

PubMed

Li, Yingtao; Yuan, Peng; Fu, Liping; Li, Rongrong; Gao, Xiaoping; Tao, Chunlan

2015-10-02

Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO₂/TiO₂/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.

A coaxial radial opening switch for a distributed-energy-store rail launcher

NASA Astrophysics Data System (ADS)

Upshaw, J. L.; Zowarka, R. C.

1984-03-01

The design, fabrication, and initial testing results for a coaxial radial opening switch for a distributed-energy-store rail launcher are presented. In this nonarcing switch, the voltage needed to transfer current to the rail launcher is generated in a fixed resistor sized to absorb the energy required to accomplish the switching. The coaxial geometry consisting of concentric rings allowed flexibility in defining the conductive and resistive portions of the switch, and also provided tight coupling by minimizing the inductance of the current path between the charging path and the load path to minimize the energy absorption requirements. The resistive portion of the switch is composed of a series of stacked circular steel ring laminations. Switching is completed in three intervals through radial actuation. The switch parts were machined from ETP 110 electrical tough pitch copper plate, 2000 series aluminum plate, and close-tolerance standed GFR epoxy. Current may be transferred at levels less than 20 kA.

Non-volatile, solid state bistable electrical switch

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor)

1994-01-01

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

ERIC Educational Resources Information Center

Gollan, Tamar H.; Goldrick, Matthew

2018-01-01

The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

Current-driven thermo-magnetic switching in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, Joseph H.; Mikesell, Harvey E.; Jha, Kamal N.

1998-01-01

A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

Fast switching and signature of efficient domain wall motion driven by spin-orbit torques in a perpendicular anisotropy magnetic insulator/Pt bilayer

NASA Astrophysics Data System (ADS)

Avci, Can Onur; Rosenberg, Ethan; Baumgartner, Manuel; Beran, Lukáš; Quindeau, Andy; Gambardella, Pietro; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-08-01

We report fast and efficient current-induced switching of a perpendicular anisotropy magnetic insulator thulium iron garnet by using spin-orbit torques (SOT) from the Pt overlayer. We first show that, with quasi-DC (10 ms) current pulses, SOT-induced switching can be achieved with an external field as low as 2 Oe, making TmIG an outstanding candidate to realize efficient switching in heterostructures that produce moderate stray fields without requiring an external field. We then demonstrate deterministic switching with fast current pulses (≤20 ns) with an amplitude of ˜1012 A/m2, similar to all-metallic structures. We reveal that, in the presence of an initially nucleated domain, the critical switching current is reduced by up to a factor of five with respect to the fully saturated initial state, implying efficient current-driven domain wall motion in this system. Based on measurements with 2 ns-long pulses, we estimate the domain wall velocity of the order of ˜400 m/s per j = 1012 A/m2.

Current induced magnetization switching in Co/Cu/Ni-Fe nanopillar with orange peel coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aravinthan, D.; Daniel, M.; Sabareesan, P.

The impact of orange peel coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the switching dynamics of magnetization of the free layer governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The value of the critical current required to initiate the magnetization switching is calculated analytically by solving the LLGS equation and verified the same through numerical analysis. Results of numerical simulation of the LLGS equation using Runge-Kutta fourth order procedure shows that the presence of orange peel coupling between the spacer and the ferromagnetic layers reduces the switching time of the nanopillar device frommore » 67 ps to 48 ps for an applied current density of 4 × 10{sup 12}Am{sup −2}. Also, the presence of orange peel coupling reduces the critical current required to initiate switching, and in this case, from 1.65 × 10{sup 12}Am{sup −2} to 1.39 × 10{sup 12}Am{sup −2}.« less

High Current, Multi-Filament Photoconductive Semiconductor Switching

DTIC Science & Technology

2011-06-01

linear PCSS triggered with a 100 fs laser pulse . Figure 1. A generic photoconductive semiconductor switch rapidly discharges a charged capacitor...switching is the most critical challenge remaining for photoconductive semiconductor switch (PCSS) applications in Pulsed Power. Many authors have...isolation and control, pulsed or DC charging, and long device lifetime, provided the current per filament is limited to 20-30A for short pulse (10

Effect of biquadratic coupling on current induced magnetization switching in Co/Cu/Ni-Fe nanopillar

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aravinthan, D.; Daniel, M., E-mail: danielcnld@gmail.com; Sabareesan, P.

2016-05-23

The effect of biquadratic coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the free layer magnetization switching dynamics governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The LLGS equation is numerically solved by using Runge-Kutta fourth order procedure for an applied current density of 5 × 10{sup 12} Am{sup -2}. Presence of biquadratic coupling in the ferromagnetic layers reduces the magnetization switching time of the nanopillar device from 61 ps to 49 ps.

HOLLOTRON switch for megawatt lightweight space inverters

NASA Technical Reports Server (NTRS)

Poeschel, R. L.; Goebel, D. M.; Schumacher, R. W.

1991-01-01

The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yalong; Jones, Edward A.; Wang, Fred

Arm inductor in a modular multilevel converter (MMC) is used to limit the circulating current and dc short circuit fault current. The circulating current in MMC is dominated by second-order harmonic, which can be largely reduced with circulating current suppressing control. By analyzing the mechanism of the circulating current suppressing control, it is found that the circulating current at switching frequency becomes the main harmonic when suppression control is implemented. Unlike the second-order harmonic that circulates only within the three phases, switching frequency harmonic also flows through the dc side and may further cause high-frequency dc voltage harmonic. This articlemore » develops the theoretical relationship between the arm inductance and switching frequency circulating current, which can be used to guide the arm inductance selection. The experimental results with a downscaled MMC prototype verify the existence of the switching frequency circulating current and its relationship with arm inductance.« less

Characterisation of the current switch mechanism in two-stage wire array Z-pinches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burdiak, G. C.; Lebedev, S. V.; Harvey-Thompson, A. J.

2015-11-15

In this paper, we describe the operation of a two-stage wire array z-pinch driven by the 1.4 MA, 240 ns rise-time Magpie pulsed-power device at Imperial College London. In this setup, an inverse wire array acts as a fast current switch, delivering a current pre-pulse into a cylindrical load wire array, before rapidly switching the majority of the generator current into the load after a 100–150 ns dwell time. A detailed analysis of the evolution of the load array during the pre-pulse is presented. Measurements of the load resistivity and energy deposition suggest significant bulk heating of the array mass occurs. Themore » ∼5 kA pre-pulse delivers ∼0.8 J of energy to the load, leaving it in a mixed, predominantly liquid-vapour state. The main current switch occurs as the inverse array begins to explode and plasma expands into the load region. Electrical and imaging diagnostics indicate that the main current switch may evolve in part as a plasma flow switch, driven by the expansion of a magnetic cavity and plasma bubble along the length of the load array. Analysis of implosion trajectories suggests that approximately 1 MA switches into the load in 100 ns, corresponding to a doubling of the generator dI/dt. Potential scaling of the device to higher current machines is discussed.« less

Prognostic health monitoring in switch-mode power supplies with voltage regulation

NASA Technical Reports Server (NTRS)

Hofmeister, James P (Inventor); Judkins, Justin B (Inventor)

2009-01-01

The system includes a current injection device in electrical communication with the switch mode power supply. The current injection device is positioned to alter the initial, non-zero load current when activated. A prognostic control is in communication with the current injection device, controlling activation of the current injection device. A frequency detector is positioned to receive an output signal from the switch mode power supply and is able to count cycles in a sinusoidal wave within the output signal. An output device is in communication with the frequency detector. The output device outputs a result of the counted cycles, which are indicative of damage to an a remaining useful life of the switch mode power supply.

Nonlinear Magnetic Dynamics and The Switching Phase Diagrams in Spintronic Devices

NASA Astrophysics Data System (ADS)

Yan, Shu

Spin-transfer torque induced magnetic switching, by which the spin-polarized current transfers its magnetic moment to the ferromagnetic layer and changes its magnetization, holds great promise towards faster and smaller magnetic bits in data-storage applications due to the lower power consumption and better scalability. We propose an analytic approach which can be used to calculate the switching phase diagram of a nanomagnetic system in the presence of both magnetic field and spin-transfer torque in an exact fashion. This method is applied to the study of switching conditions for the uniaxial, single domain magnetic layers in different spin-transfer devices. In a spin valve with spin polarization collinear with the easy axis, we get a modified Stoner-Wohlfarth astroid which represents many of the features that have been found in experiment. It also shows a self-crossing boundary and demonstrates a region with three stable equilibria. We demonstrate that the region of stable equilibria with energy near the maximum can be reached only through a narrow bottleneck in the field space, which sets a stringent requirement for magnetic field alignment in the experiments. Switching diagrams are then calculated for the setups with magnetic field not perfectly aligned with the easy axis. In a ferromagnet-heavy-metal bilayer device with strong spin Hall effect, the in plane current becomes spin-polarized and transfers its magnetic moment to the ferromagnetic layer by diffusion. The three-dimensional asymmetric phase diagram is calculated. In the case that the external field is confined in the vertical plane defined by the direction of the current and the easy axis, the spin-transfer torque shifts the conventional in-plane (IP) equilibria within the same plane, and also creates two out-of-plane (OOP) equilibria, one of which can be stable. The threshold switching currents for IP switching and OOP switching are discussed. We also address the magnetic switching processes. Damping switching and precessional switching are two different switching types that are typically considered in recent studies. In the damping mode the switching is slow and heavily depends on the initial deviation, while in the precessional mode the accurate manipulation of the field or current pulse is required. We propose a switching scenario for a fast and reliable switching by taking advantage of the out-of-plane stable equilibrium in the SHE induced magnetic switching. The magnetization is first driven by a pulse of field and current towards the OOP equilibrium without precession. Since it is in the lower half of the unit sphere, no backwards pulse is required for a complete switching. This indicates a potentially feasible method of reliable ultra-fast magnetic control.

49 CFR 229.87 - Hand-operated switches.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Hand-operated switches. 229.87 Section 229.87....87 Hand-operated switches. All hand-operated switches carrying currents with a potential of more than... outside of the cover. Means shall be provided to show whether the switches are open or closed. Switches...

49 CFR 229.87 - Hand-operated switches.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Hand-operated switches. 229.87 Section 229.87....87 Hand-operated switches. All hand-operated switches carrying currents with a potential of more than... outside of the cover. Means shall be provided to show whether the switches are open or closed. Switches...

49 CFR 229.87 - Hand-operated switches.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Hand-operated switches. 229.87 Section 229.87....87 Hand-operated switches. All hand-operated switches carrying currents with a potential of more than... outside of the cover. Means shall be provided to show whether the switches are open or closed. Switches...

49 CFR 229.87 - Hand-operated switches.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Hand-operated switches. 229.87 Section 229.87....87 Hand-operated switches. All hand-operated switches carrying currents with a potential of more than... outside of the cover. Means shall be provided to show whether the switches are open or closed. Switches...

Ultrafast Power Processor for Smart Grid Power Module Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

MAITRA, ARINDAM; LITWIN, RAY; lai, Jason

This project’s goal was to increase the switching speed and decrease the losses of the power semiconductor devices and power switch modules necessary to enable Smart Grid energy flow and control equipment such as the Ultra-Fast Power Processor. The primary focus of this project involves exploiting the new silicon-based Super-GTO (SGTO) technology and build on prototype modules already being developed. The prototype super gate-turn-off thyristor (SGTO) has been tested fully under continuously conducting and double-pulse hard-switching conditions for conduction and switching characteristics evaluation. The conduction voltage drop measurement results indicate that SGTO has excellent conduction characteristics despite inconsistency among somemore » prototype devices. Tests were conducted with two conditions: (1) fixed gate voltage and varying anode current condition, and (2) fixed anode current and varying gate voltage condition. The conduction voltage drop is relatively a constant under different gate voltage condition. In terms of voltage drop as a function of the load current, there is a fixed voltage drop about 0.5V under zero current condition, and then the voltage drop is linearly increased with the current. For a 5-kV voltage blocking device that may operate under 2.5-kV condition, the projected voltage drop is less than 2.5 V under 50-A condition, or 0.1%. If the device is adopted in a converter operating under soft-switching condition, then the converter can achieve an ultrahigh efficiency, typically above 99%. The two-pulse switching test results indicate that SGTO switching speed is very fast. The switching loss is relatively low as compared to that of the insulated-gate-bipolar-transistors (IGBTs). A special phenomenon needs to be noted is such a fast switching speed for the high-voltage switching tends to create an unexpected Cdv/dt current, which reduces the turn-on loss because the dv/dt is negative and increases the turn-off loss because the dv/dt is positive. As a result, the turn-on loss at low current is quite low, and the turn-off loss at low current is relatively high. The phenomenon was verified with junction capacitance measurement along with the dv/dt calculation. Under 2-kV test condition, the turn-on and turn-off losses at 25-A is about 3 and 9 mJ, respectively. As compared to a 4.5-kV, 60-A rated IGBT, which has turn-on and turn-off losses about 25 and 20 mJ under similar test condition, the SGTO shows significant switching loss reduction. The switching loss depends on the switching frequency, but under hard-switching condition, the SGTO is favored to the IGBT device. The only concern is during low current turn-on condition, there is a voltage bump that can translate to significant power loss and associated heat. The reason for such a current bump is not known from this study. It is necessary that the device manufacturer perform though test and provide the answer so the user can properly apply SGTO in pulse-width-modulated (PWM) converter and inverter applications.« less

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

1998-08-11

A device and a method are disclosed for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens. 7 figs.

Current limiter circuit system

DOEpatents

Witcher, Joseph Brandon; Bredemann, Michael V.

2017-09-05

An apparatus comprising a steady state sensing circuit, a switching circuit, and a detection circuit. The steady state sensing circuit is connected to a first, a second and a third node. The first node is connected to a first device, the second node is connected to a second device, and the steady state sensing circuit causes a scaled current to flow at the third node. The scaled current is proportional to a voltage difference between the first and second node. The switching circuit limits an amount of current that flows between the first and second device. The detection circuit is connected to the third node and the switching circuit. The detection circuit monitors the scaled current at the third node and controls the switching circuit to limit the amount of the current that flows between the first and second device when the scaled current is greater than a desired level.

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

NASA Technical Reports Server (NTRS)

Gummin, Mark A.

2011-01-01

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Organic Bistable Memory Switching Phenomena in Squarylium-Dye Langmuir-Blodgett Films

NASA Astrophysics Data System (ADS)

Kushida, Masahito; Inomata, Hisao; Miyata, Hiroshi; Harada, Kieko; Saito, Kyoichi; Sugita, Kazuyuki

2003-06-01

We have investigated the relationship between the switching phenomena and H-like aggregates in squarylium-dye Langmuir-Blodgett (SQ LB) films. The current-voltage characteristics of SQ LB films sandwiched between the top gold electrode and the bottom aluminum electrode indicated conductance switching phenomena below the temperature of 100°C but not at 140°C. Current densities suddenly increased at switching voltages between 2 and 4 V. The switching voltage increased as the temperature increased between room temperature and 100°C. Current densities were 50-100 μA/cm2 in a low-impedance state (ON state). A high-impedance state (OFF state) can be recovered by applying a reverse bias, and therefore, these bistable devices are ideal for memory applications. The dependence of conductance switching phenomena and ultraviolet-visible absorption spectra on annealing temperatures was studied. The results revealed that conductance switching phenomena were caused by the presence of H-like aggregates in the SQ LB films.

Research of an electromagnetically actuated spark gap switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Tianyang; Chen, Dongqun, E-mail: csycdq@163.com; Liu, Jinliang

2013-11-15

As an important part of pulsed power systems, high-voltage and high-current triggered spark gap switch and its trigger system are expected to achieve a compact structure. In this paper, a high-voltage, high-current, and compact electromagnetically actuated spark gap switch is put forward, and it can be applied as a part of an intense electron-beam accelerator (IEBA). A 24 V DC power supply is used to trigger the switch. The characteristics of the switch were measured for N{sub 2} when the gas pressure is 0.10–0.30 MPa. The experimental results showed that the voltage/pressure (V/p) curve of the switch was linear relationship.more » The operating ranges of the switch were 21%–96%, 21%–95%, 21%–95%, 19%–95%, 17%–95%, and 16%–96% of the switch's self-breakdown voltage when the gas pressures were 0.10, 0.14, 0.18, 0.22, 0.26, and 0.30 MPa, respectively. The switch and its trigger system worked steadily and reliably with a peak voltage of 30 kV, a peak current of 60 kA in the IEBA when the pressure of N{sub 2} in the switch was 0.30 MPa.« less

Megavolt, Multigigawatt Pulsed Plasma Switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Song, Kyo D.

1996-01-01

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

62. VIEW LOOKING NORTHWEST AT THE OIL FILLED CIRCUIT BREAKER ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

62. VIEW LOOKING NORTHWEST AT THE OIL FILLED CIRCUIT BREAKER FOR GENERATOR NUMBER 1. CIRCUIT BREAKERS ARE AUTOMATED SWITCHES WHICH DISCONNECT THE GENERATORS FROM THE LINE WHEN SHORT CIRCUITS OCCUR. WHEN CIRCUITS INVOLVING HIGH CURRENTS AND VOLTAGES ARE BROKEN, THE AIR SURROUNDING MECHANICAL PARTS OF THE SWITCH BECOMES IONIZED AND CONTINUES TO CONDUCT ELECTRIC POWER ACROSS ANY GAP IN THE SWITCH CONTACTS. TO PREVENT THIS AND INSURE A POSITIVE INTERRUPTION OF CURRENT, THE SWITCH CONTACTS ARE IMMERSED IN A CONTAINER OF OIL. THE OIL DOES NOT SUPPORT THE FORMATION OF AN ARC AND EFFECTIVELY CUTS OFF THE CURRENT WHEN THE SWITCH CONTACTS ARE OPENED. - New York, New Haven & Hartford Railroad, Cos Cob Power Plant, Sound Shore Drive, Greenwich, Fairfield County, CT

Apparatus for producing voltage and current pulses

DOEpatents

Kirbie, Hugh; Dale, Gregory E.

2010-12-21

An apparatus having one or more modular stages for producing voltage and current pulses. Each module includes a diode charging means to charge a capacitive means that stores energy. One or more charging impedance means are connected to the diode charging means to provide a return current pathway. A solid-state switch discharge means, with current interruption capability, is connected to the capacitive means to discharge stored energy. Finally, a control means is provided to command the switching action of the solid-state switch discharge means.

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinjo, Hidekazu, E-mail: kinjou.h-lk@nhk.or.jp; Machida, Kenji; Aoshima, Ken-ichi

2014-05-28

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

Circulating Current Suppressing Control’s Impact on Arm Inductance Selection for Modular Multilevel Converter

DOE PAGES

Li, Yalong; Jones, Edward A.; Wang, Fred

2016-10-13

Arm inductor in a modular multilevel converter (MMC) is used to limit the circulating current and dc short circuit fault current. The circulating current in MMC is dominated by second-order harmonic, which can be largely reduced with circulating current suppressing control. By analyzing the mechanism of the circulating current suppressing control, it is found that the circulating current at switching frequency becomes the main harmonic when suppression control is implemented. Unlike the second-order harmonic that circulates only within the three phases, switching frequency harmonic also flows through the dc side and may further cause high-frequency dc voltage harmonic. This articlemore » develops the theoretical relationship between the arm inductance and switching frequency circulating current, which can be used to guide the arm inductance selection. The experimental results with a downscaled MMC prototype verify the existence of the switching frequency circulating current and its relationship with arm inductance.« less

The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

NASA Astrophysics Data System (ADS)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping; Lan, Kuibo

2017-07-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples.

Transient current interruption mechanism in a magnetically delayed vacuum switch

NASA Technical Reports Server (NTRS)

Morris, Gibson, Jr.; Dougal, Roger A.

1993-01-01

The capacity of a magnetically delayed vacuum switch to conduct current depends on the density of plasma injected into the switch. Exceeding the current capacity results in the switch entering a lossy mode of operation characterized by a transient interruption of the main current (opening behavior) and a rapid increase of voltage across the vacuum gap. Streak and framing photographs of the discharge indicate that a decrease of luminosity near the middle of the gap preceeds the transition to the opening phase. The zone of low luminosity propagates toward the cathode. This evidence suggests that the mechanism causing the opening phase is erosion of the background plasma in a manner similar to that in a plasma-opening switch. The resulting ion depletion forces a space-charge-limited conduction mode. The switch inductance maintains a high discharge current even during the space-charge-limited conduction phase, thus producing high internal fields. The high accelerating voltage, in turn, produces electron and ion beams that heat the electrode surfaces. As a result of the heating, jets of electrode vapor issue from the electrodes, either cathode or anode, depending on the selection of electrode materials.

On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

NASA Astrophysics Data System (ADS)

Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

2017-12-01

The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

NASA Astrophysics Data System (ADS)

Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

2018-03-01

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Polzin, Kurt A.; Hudgins, Jerry L.

2014-01-01

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of µs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high-power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre-ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn-off Thyristors (GTOs) and Silicon-Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast-switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn-off), and lower-magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

High-power microstrip switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1974-01-01

Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.

Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

NASA Technical Reports Server (NTRS)

Burns, Bradley M.; Blalock, Norman N.

2010-01-01

A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

1981-10-01

A triggered low-pressure switch was tested switching a charged capacitor across a damping resistor simulating a transformer. A series saturating inductor protected the switch from electron beam anode damage. The capacitor was 15 micro F and charge voltages up to 50 kV were used. The time to current maximum was 5 to 8 micro S. The current terminated at about 50 micro S and voltage could be reapplied at about 100 micro S.

Optically Driven Q-Switches For Lasers

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

1994-01-01

Optically driven Q-switches for pulsed lasers proposed, taking place of acousto-optical, magneto-optical, and electro-optical switches. Optical switching beams of proposed Q-switching most likely generated in pulsed diode lasers or light-emitting diodes, outputs of which are amplitude-modulated easily by direct modulation of relatively small input currents. Energy efficiencies exceed those of electrically driven Q-switches.

Oxidation of Ultra-High Temperature Ceramics in Water Vapor

NASA Technical Reports Server (NTRS)

Nguyen, QuynhGiao N.; Opila, Elizabeth J.; Robinson, Raymond C.

2003-01-01

Ultra high temperature ceramics (UHTCs) including HfB2 + SiC (20% by volume), ZrB2 + SiC (20% by volume) and ZrB2 + SiC (14% by volume) + C (30% by volume) have historically been evaluated as reusable thermal protection systems for hypersonic vehicles. This study investigates UHTCs for use as potential combustion and aeropropulsion engine materials. These materials were oxidized in water vapor (90%) using a cyclic vertical furnace at 1 atm. The total exposure time was 10 hours at temperatures of 1200, 1300, and 1400 C. CVD SiC was also evaluated as a baseline comparison. Weight change measurements, X-ray diffraction analyses, surface and cross-sectional SEM and EDS were performed. These results will be compared with tests ran in static air at temperatures of 1327, 1627, and 1927 C. Oxidation comparisons will also be made to the study by Tripp. A small number of high pressure burner rig (HPBR) results at 1100 and 1300 C will also be discussed. Specific weight changes at all three temperatures along with the SIC results are shown. SiC weight change is negligible at such short duration times. HB2 + SiC (HS) performed the best out of all the tested UHTCS for all exposure temperatures. ZrB2 + Sic (ZS) results indicate a slightly lower oxidation rate than that of ZrBl + SiC + C (ZCS) at 1200 and 1400 C, but a clear distinction can not be made based on the limited number of tested samples. Scanning electron micrographs of the cross-sections of all the UHTCs were evaluated. A representative area for HS is presented at 1400 C for 26 hours which was the composition with the least amount of oxidation. A continuous SiO2 scale is present in the outer most edge of the surface. An image of ZCS is presented at 1400 C for 10 hours, which shows the most degradation of all the compositions studied. Here, the oxide surface is a mixture of ZrSiO4, ZrO2 and SO2.

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

NASA Astrophysics Data System (ADS)

Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

Base drive circuit for a four-terminal power Darlington

DOEpatents

Lee, Fred C.; Carter, Roy A.

1983-01-01

A high power switching circuit which utilizes a four-terminal Darlington transistor block to improve switching speed, particularly in rapid turn-off. Two independent reverse drive currents are utilized during turn off in order to expel the minority carriers of the Darlington pair at their own charge sweep-out rate. The reverse drive current may be provided by a current transformer, the secondary of which is tapped to the base terminal of the power stage of the Darlington block. In one application, the switching circuit is used in each power switching element in a chopper-inverter drive of an electric vehicle propulsion system.

Hardware Model of a Shipboard Zonal Electrical Distribution System (ZEDS): Alternating Current/Direct Current (AC/DC)

DTIC Science & Technology

2010-06-01

perfect example on how to lead, manage and strive for excellence in every aspect of your life. Your leadership is essential to fostering the loyalty ...share my success, I could not have ever achieved the level of satisfaction and enjoyment that I have. You will never understand how helpful the...A typical wall mounted light switch is a single pole single throw switch. A common industrial motor start switch is a three pole single throw switch

Gas tube-switched high voltage DC power converter

DOEpatents

She, Xu; Bray, James William; Sommerer, Timothy John; Chokhawala, Rahul

2018-05-15

A direct current (DC)-DC converter includes a transformer and a gas tube-switched inverter circuit. The transformer includes a primary winding and a secondary winding. The gas tube-switched inverter circuit includes first and second inverter load terminals and first and second inverter input terminals. The first and second inverter load terminals are coupled to the primary winding. The first and second inverter input terminals are couplable to a DC node. The gas tube-switched inverter circuit further includes a plurality of gas tube switches respectively coupled between the first and second inverter load terminals and the first and second inverter input terminals. The plurality of gas tube switches is configured to operate to generate an alternating current (AC) voltage at the primary winding.

FAST ACTING CURRENT SWITCH

DOEpatents

Batzer, T.H.; Cummings, D.B.; Ryan, J.F.

1962-05-22

A high-current, fast-acting switch is designed for utilization as a crowbar switch in a high-current circuit such as used to generate the magnetic confinement field of a plasma-confining and heat device, e.g., Pyrotron. The device particularly comprises a cylindrical housing containing two stationary, cylindrical contacts between which a movable contact is bridged to close the switch. The movable contact is actuated by a differential-pressure, airdriven piston assembly also within the housing. To absorb the acceleration (and the shock imparted to the device by the rapidly driven, movable contact), an adjustable air buffer assembly is provided, integrally connected to the movable contact and piston assembly. Various safety locks and circuit-synchronizing means are also provided to permit proper cooperation of the invention and the high-current circuit in which it is installed. (AEC)

Method and apparatus for clockless analog-to-digital conversion and peak detection

DOEpatents

DeGeronimo, Gianluigi

2007-03-06

An apparatus and method for analog-to-digital conversion and peak detection includes at least one stage, which includes a first switch, second switch, current source or capacitor, and discriminator. The discriminator changes state in response to a current or charge associated with the input signal exceeding a threshold, thereby indicating whether the current or charge associated with the input signal is greater than the threshold. The input signal includes a peak or a charge, and the converter includes a peak or charge detect mode in which a state of the switch is retained in response to a decrease in the current or charge associated with the input signal. The state of the switch represents at least a portion of a value of the peak or of the charge.

A β-Ta system for current induced magnetic switching in the absence of external magnetic field

NASA Astrophysics Data System (ADS)

Chen, Wenzhe; Qian, Lijuan; Xiao, Gang

2018-05-01

Magnetic switching via Giant Spin Hall Effect (GSHE) has received great interest for its role in developing future spintronics logic or memory devices. In this work, a new material system (i.e. a transition metal sandwiched between two ferromagnetic layers) with interlayer exchange coupling is introduced to realize the deterministic field-free perpendicular magnetic switching. This system uses β-Ta, as the GSHE agent to generate a spin current and as the interlayer exchange coupling medium to generate an internal field. The critical switching current density at zero field is on the order of 106 A/cm2 due to the large spin Hall angle of β-Ta. The internal field, along with switching efficiency, depends strongly on the orthogonal magnetization states of two ferromagnetic coupling layers in this system.

Restraining for switching effects in an AC driving pixel circuit of the OLED-on-silicon

NASA Astrophysics Data System (ADS)

Liu, Yan-Yan; Geng, Wei-Dong; Dai, Yong-Ping

2010-03-01

The AC driving scheme for OLEDs, which uses the pixel circuit with two transistors and one capacitor (2T1C), can extend the lifetime of the active matrix organic light-emitting diode (AMOLED) on silicon, but there are switching effects during the switch of AC signals, which result in the voltage variation on the storage capacitor and cause the current glitch in OLED. That would decrease the gray scale of the OLED. This paper proposes a novel pixel circuit consisting of three transistors and one capacitor to realize AC driving for the OLED-on-silicon while restraining the switching effects. Simulation results indicate that the proposed circuit is less sensitive to switching effects. Also, another pixel circuit is proposed to further reduce the driving current to meet the current constraints for the OLED-on-silicon.

Repetitive switching for an electromagnetic rail gun

NASA Astrophysics Data System (ADS)

Gruden, J. M.

1983-12-01

Previous testing on a repetitive opening switch for inductive energy storage has proved the feasibility of the rotary switch concept. The concept consists of a rotating copper disk (rotor) with a pie-shaped insulator section and brushes which slide along each of the rotor surfaces. While on top of the copper surface, the brushes and rotor conduct current allowing the energy storage inductor to charge. When the brushes slide onto the insulator section, the current cannot pass through the rotor and is diverted into the load. This study investigates two new brush designs and a rotor modification designed to improve the current commutating capabilities of the switch. One brush design (fringe fiber) employs carbon fibers on the leading and trailing edge of the brush to increase the resistive commutating action as the switch opens and closes. The other brush design uses fingers to conduct current to the rotor surface, effectively increasing the number of brush contact points. The rotor modification was the placement of tungsten inserts at the copper-insulator interfaces.

Digital switched hydraulics

NASA Astrophysics Data System (ADS)

Pan, Min; Plummer, Andrew

2018-06-01

This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

Thermionic gas switch

DOEpatents

Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

1984-04-05

The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

NASA Astrophysics Data System (ADS)

Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

2014-12-01

Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators

NASA Astrophysics Data System (ADS)

Chen, X. Z.; Zarzuela, R.; Zhang, J.; Song, C.; Zhou, X. F.; Shi, G. Y.; Li, F.; Zhou, H. A.; Jiang, W. J.; Pan, F.; Tserkovnyak, Y.

2018-05-01

We investigate the current-induced switching of the Néel order in NiO (001 )/Pt heterostructures, which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 1 07 A /cm2 . The order-parameter switching is ascribed to the antiferromagnetic dynamics triggered by the (current-induced) antidamping torque, which orients the Néel order towards the direction of the writing current. This is in stark contrast to the case of antiferromagnets such as Mn2Au and CuMnAs, where fieldlike torques induced by the Edelstein effect drive the Néel switching, therefore resulting in an orthogonal alignment between the Néel order and the writing current. Our findings can be readily generalized to other biaxial antiferromagnets, providing broad opportunities for all-electrical writing and readout in antiferromagnetic spintronics.

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

Optimization of spin-torque switching using AC and DC pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dunn, Tom; Kamenev, Alex; Fine Theoretical Physics Institute, University of Minnesota, Minneapolis, Minnesota 55455

2014-06-21

We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.

Parallel, staged opening switch power conditioning techniques for flux compression generator applications

NASA Astrophysics Data System (ADS)

Reinovsky, R. E.; Levi, P. S.; Bueck, J. C.; Goforth, J. H.

The Air Force Weapons Laboratory, working jointly with Los Alamos National Laboratory, has conducted a series of experiments directed at exploring composite, or staged, switching techniques for use in opening switches in applications which require the conduction of very high currents (or current densities) with very low losses for relatively long times (several tens of microseconds), and the interruption of these currents in much shorter times (ultimately a few hundred nanoseconds). The results of those experiments are reported.

MOSFET Power Controller

NASA Technical Reports Server (NTRS)

Mitchell, J.; Jones, K.

1986-01-01

High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

20 kA PFN capacitor bank with solid-state switching. [pulse forming network for plasma studies

NASA Technical Reports Server (NTRS)

Posta, S. J.; Michels, C. J.

1973-01-01

A compact high-current pulse-forming network capacitor bank using paralleled silicon controlled rectifiers as switches is described. The maximum charging voltage of the bank is 1kV and maximum load current is 20 kA. The necessary switch equalization criteria and performance with dummy load and an arc plasma generator are described.

Measurement of resistance switching dynamics in copper sulfide memristor structures

NASA Astrophysics Data System (ADS)

McCreery, Kaitlin; Olson, Matthew; Teitsworth, Stephen

Resistance switching materials are the subject of current research in large part for their potential to enable novel computing devices and architectures such as resistance random access memories and neuromorphic chips. A common feature of memristive structures is the hysteretic switching between high and low resistance states which is induced by the application of a sufficiently large electric field. Here, we describe a relatively simple wet chemistry process to fabricate Cu2 S / Cu memristive structures with Cu2 S film thickness ranging up to 150 micron. In this case, resistance switching is believed to be mediated by electromigration of Cu ions from the Cu substrate into the Cu2 S film. Hysteretic current-voltage curves are measured and reveal switching voltages of about 0.8 Volts with a relatively large variance and independent of film thickness. In order to gain insight into the dynamics and variability of the switching process, we have measured the time-dependent current response to voltage pulses of varying height and duration with a time resolution of 1 ns. The transient response consists of a deterministic RC component as well as stochastically varying abrupt current steps that occur within a few microseconds of the pulse application.

Switching Dynamics of an Underdamped Josephson Junction Coupled to a Microwave Cavity

NASA Astrophysics Data System (ADS)

Oelsner, G.; Il'ichev, E.

2018-05-01

Current-biased Josephson junctions are promising candidates for the detection of single photons in the microwave frequency domain. With modern fabrication technologies, the switching properties of the junction can be adjusted to achieve quantum limited sensitivity. Namely, the width of the switching current distribution can be reduced well below the current amplitude produced by a single photon trapped inside a superconducting cavity. However, for an effective detection a strong junction cavity coupling is required, providing nonlinear system dynamics. We compare experimental findings for our prototype device with a theoretical analysis aimed to describe the switching dynamics of junctions under microwave irradiation. Measurements are found in qualitative agreement with our simulations.

Compensation of voltage drops in solid-state switches used with thermoelectric generators

NASA Technical Reports Server (NTRS)

Shimada, K.

1972-01-01

Seebeck effect solid state switch was developed eliminating thermoelectric generator switch voltage drops. Semiconductor switches were fabricated from materials with large Seebeck coefficients, arranged such that Seebeck potential is generated with such polarity that current flow is aided.

PHz current switching in calcium fluoride single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Ojoon; Kim, D., E-mail: kimd@postech.ac.kr; Max Planck Center for Attosecond Science, Max Planck POSTECH/Korea Res. Init., Pohang 37673

2016-05-09

We demonstrate that a current can be induced and switched in a sub-femtosecond time-scale in an insulating calcium fluoride single crystal by an intense optical field. This measurement indicates that a sizable current can be generated and also controlled by an optical field in a dielectric medium, implying the capability of rapid current switching at a rate of optical frequency, PHz (10{sup 15} Hz), which is a couple of orders of magnitude higher than that of contemporary electronic signal processing. This demonstration may serve to facilitate the development of ultrafast devices in PHz frequency.

Zener diode controls switching of large direct currents

NASA Technical Reports Server (NTRS)

1965-01-01

High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.

Current polarity-dependent manipulation of antiferromagnetic domains

NASA Astrophysics Data System (ADS)

Wadley, Peter; Reimers, Sonka; Grzybowski, Michal J.; Andrews, Carl; Wang, Mu; Chauhan, Jasbinder S.; Gallagher, Bryan L.; Campion, Richard P.; Edmonds, Kevin W.; Dhesi, Sarnjeet S.; Maccherozzi, Francesco; Novak, Vit; Wunderlich, Joerg; Jungwirth, Tomas

2018-05-01

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields1. Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents2. In previous experiments, orthogonal in-plane current pulses were used to induce 90° rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry3. Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using X-ray magnetic linear dichroism microscopy, and can also be detected electrically. Switching by domain-wall motion can occur at much lower current densities than those needed for coherent domain switching.

Electrically controlled optical latch and switch requires less current

NASA Technical Reports Server (NTRS)

Pieczonka, W. A.; Roy, M. M.; Yeh, T. H.

1966-01-01

Electrically controlled optical latch consists of a sensitive phototransistor and a solid-state light source. This design requires less current to activate an optically activated switch than in prior art.

Prediction of zeolite-cement-sand unconfined compressive strength using polynomial neural network

NASA Astrophysics Data System (ADS)

MolaAbasi, H.; Shooshpasha, I.

2016-04-01

The improvement of local soils with cement and zeolite can provide great benefits, including strengthening slopes in slope stability problems, stabilizing problematic soils and preventing soil liquefaction. Recently, dosage methodologies are being developed for improved soils based on a rational criterion as it exists in concrete technology. There are numerous earlier studies showing the possibility of relating Unconfined Compressive Strength (UCS) and Cemented sand (CS) parameters (voids/cement ratio) as a power function fits. Taking into account the fact that the existing equations are incapable of estimating UCS for zeolite cemented sand mixture (ZCS) well, artificial intelligence methods are used for forecasting them. Polynomial-type neural network is applied to estimate the UCS from more simply determined index properties such as zeolite and cement content, porosity as well as curing time. In order to assess the merits of the proposed approach, a total number of 216 unconfined compressive tests have been done. A comparison is carried out between the experimentally measured UCS with the predictions in order to evaluate the performance of the current method. The results demonstrate that generalized polynomial-type neural network has a great ability for prediction of the UCS. At the end sensitivity analysis of the polynomial model is applied to study the influence of input parameters on model output. The sensitivity analysis reveals that cement and zeolite content have significant influence on predicting UCS.

The Minimum Requirements of Language Control: Evidence from Sequential Predictability Effects in Language Switching

ERIC Educational Resources Information Center

Declerck, Mathieu; Koch, Iring; Philipp, Andrea M.

2015-01-01

The current study systematically examined the influence of sequential predictability of languages and concepts on language switching. To this end, 2 language switching paradigms were combined. To measure language switching with a random sequence of languages and/or concepts, we used a language switching paradigm that implements visual cues and…

100-kA vacuum current breaker of a modular design

NASA Astrophysics Data System (ADS)

Ivanov, V. P.; Vozdvijenskii, V. A.; Jagnov, V. A.; Solodovnikov, S. G.; Mazulin, A. V.; Ryjkov, V. M.

1994-05-01

Direct current breaker of a modular design is developed for the strong field tokamak power supply system. The power supply system comprises four 800 MW alternative current generators with 4 GJ flywheels, thyristor rectifiers providing inductive stores pumping by a current up to 100 kA for 1 - 4 sec. To form current pulses of various shapes in the tokamak windings current breakers are used with either pneumatic or explosive drive, at a current switching synchronously of not worse than 100 mks. Current breakers of these types require that the current conducting elements be replaced after each shot. For recent years vacuum arc quenching chambers with an axial magnetic field are successfully employed as repetitive performance current breakers, basically for currents up to 40 kA. In the report some results of researches of a vacuum switch modular are presented which we used as prototype switch for currents of the order of 100 kA.

Superconducting coil system and methods of assembling the same

DOEpatents

Rajput-Ghoshal, Renuka; Rochford, James H.; Ghoshal, Probir K.

2016-01-19

A superconducting magnet apparatus is provided. The superconducting magnet apparatus includes a power source configured to generate a current; a first switch coupled in parallel to the power source; a second switch coupled in series to the power source; a coil coupled in parallel to the first switch and the second switch; and a passive quench protection device coupled to the coil and configured to by-pass the current around the coil and to decouple the coil from the power source when the coil experiences a quench.

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

PubMed

Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

2013-09-06

Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

Non-oxidized porous silicon-based power AC switch peripheries.

PubMed

Menard, Samuel; Fèvre, Angélique; Valente, Damien; Billoué, Jérôme; Gautier, Gaël

2012-10-11

We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

Spacecraft solid state power distribution switch

NASA Technical Reports Server (NTRS)

Praver, G. A.; Theisinger, P. C.

1986-01-01

As a spacecraft performs its mission, various loads are connected to the spacecraft power bus in response to commands from an on board computer, a function called power distribution. For the Mariner Mark II set of planetary missions, the power bus is 30 volts dc and when loads are connected or disconnected, both the bus and power return side must be switched. In addition, the power distribution function must be immune to single point failures and, when power is first applied, all switches must be in a known state. Traditionally, these requirements have been met by electromechanical latching relays. This paper describes a solid state switch which not only satisfies the requirements but incorporates several additional features including soft turn on, programmable current trip point with noise immunity, instantaneous current limiting, and direct telemetry of load currents and switch status. A breadboard of the design has been constructed and some initial test results are included.

An integrated circuit switch

NASA Technical Reports Server (NTRS)

Bonin, E. L.

1969-01-01

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

Hybrid zero-voltage switching (ZVS) control for power inverters

DOEpatents

Amirahmadi, Ahmadreza; Hu, Haibing; Batarseh, Issa

2016-11-01

A power inverter combination includes a half-bridge power inverter including first and second semiconductor power switches receiving input power having an intermediate node therebetween providing an inductor current through an inductor. A controller includes input comparison circuitry receiving the inductor current having outputs coupled to first inputs of pulse width modulation (PWM) generation circuitry, and a predictive control block having an output coupled to second inputs of the PWM generation circuitry. The predictive control block is coupled to receive a measure of Vin and an output voltage at a grid connection point. A memory stores a current control algorithm configured for resetting a PWM period for a switching signal applied to control nodes of the first and second power switch whenever the inductor current reaches a predetermined upper limit or a predetermined lower limit.

Development and simulation study of a new inverse-pinch high Coulomb transfer switch

NASA Technical Reports Server (NTRS)

Choi, Sang H.

1989-01-01

The inverse-pinch plasma switch was studied using a computer simulation code. The code was based on a 2-D, 2-temperature magnetohydrodynamic (MHD) model. The application of this code was limited to the disk-type inverse-pinch plasma switch. The results of the computer analysis appear to be in agreement with the experimental results when the same parameters are used. An inverse-pinch plasma switch for closing has been designed and tested for high-power switching requirements. An azimuthally uniform initiation of breakdown is a key factor in achieving an inverse-pinch current path in the switch. Thus, various types of triggers, such as trigger pins, wire-brush, ring trigger, and hypocycloidal-pinch (HCP) devices have been tested for uniform breakdown. Recently, triggering was achieved by injection of a plasma-ring (plasma puff) that is produced separately with hypocycloidal-pinch electrodes placed under the cathode of the main gap. The current paths at switch closing, initiated by the injection of a plasma-ring from the HCP trigger are azimuthally uniform, and the local current density is significantly reduced, so that damage to the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes is four orders of magnitude less than that of a spark-gap switch for the same switching power. Indeed, a few thousand shots with peak current exceeding a mega-ampere and with hold-off voltage up to 20 kV have been conducted without showing measurable damage to the electrodes and insulators.

Digital optical signal processing with polarization-bistable semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jai-Ming Liu,; Ying-Chin Chen,

1985-04-01

The operations of a complete set of optical AND, NAND, OR, and NOR gates and clocked optical S-R, D, J-K, and T flip-flops are demonstrated, based on direct polarization switching and polarization bistability, which we have recently observed in InGaAsP/InP semiconductor lasers. By operating the laser in the direct-polarizationswitchable mode, the output of the laser can be directly switched between the TM00 and TE00 modes with high extinction ratios by changing the injection-current level, and optical logic gates are constructed with two optoelectronic switches or photodetectors. In the polarization-bistable mode, the laser exhibits controllable hysteresis loops in the polarization-resolved powermore » versus current characteristics. When the laser is biased in the middle of the hysteresis loop, the light output can be switched between the two polarization states by injection of short electrical or optical pulses, and clocked optical flip-flops are constructed with a few optoelectronic switches and/or photodetectors. The 1 and 0 states of these devices are defined through polarization changes of the laser and direct complement functions are obtainable from the TE and TM output signals from the same laser. Switching of the polarization-bistable lasers with fast-rising current pulses has an instrument-limited mode-switching time on the order of 1 ns. With fast optoelectronic switches and/or fast photodetectors, the overall switching speed of the logic gates and flip-flops is limited by the polarizationbistable laser to <1 ns. We have demonstrated the operations of these devices using optical signals generated by semiconductor lasers. The proposed schemes of our devices are compatible with monolithic integration based on current fabrication technology and are applicable to other types of bistable semiconductor lasers.« less

Methodology for Wide Band-Gap Device Dynamic Characterization

DOE PAGES

Zhang, Zheyu; Guo, Ben; Wang, Fei Fred; ...

2017-01-19

Here, the double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V-I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method ismore » proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V-I timing misalignment errors.« less

High PRF high current switch

DOEpatents

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

Predictors of switch from depression to mania in bipolar disorder.

PubMed

Niitsu, Tomihisa; Fabbri, Chiara; Serretti, Alessandro

2015-01-01

Manic switch is a relevant issue when treating bipolar depression. Some risk factors have been suggested, but unequivocal findings are lacking. We therefore investigated predictors of switch from depression to mania in the Systematic Treatment Enhancement Program for Bipolar Disorder (STEP-BD) sample. Manic switch was defined as a depressive episode followed by a (hypo)manic or mixed episode within the following 12 weeks. We assessed possible predictors of switch using generalized linear mixed models (GLMM). 8403 episodes without switch and 512 episodes with switch (1720 subjects) were included in the analysis. Several baseline variables were associated with a higher risk of switch. They were younger age, previous history of: rapid cycling, severe manic symptoms, suicide attempts, amphetamine use and some pharmacological and psychotherapeutic treatments. During the current depressive episode, the identified risk factors were: any possible mood elevation, multiple mania-associated symptoms with at least moderate severity, and comorbid panic attacks. In conclusion, our study suggests that both characteristics of the disease history and clinical features of the current depressive episode may be risk factors for manic switch. Copyright © 2015 Elsevier Ltd. All rights reserved.

Development of compact rapid charging power supply for capacitive energy storage in pulsed power drivers.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2015-02-01

High energy capacitor bank is used for primary electrical energy storage in pulsed power drivers. The capacitors used in these pulsed power drivers have low inductance, low internal resistance, and less dc life, so it has to be charged rapidly and immediately discharged into the load. A series resonant converter based 45 kV compact power supply is designed and developed for rapid charging of the capacitor bank with constant charging current up to 150 mA. It is short circuit proof, and zero current switching technique is used to commute the semiconductor switch. A high frequency resonant inverter switching at 10 kHz makes the overall size small and reduces the switching losses. The output current of the power supply is limited by constant on-time and variable frequency switching control technique. The power supply is tested by charging the 45 kV/1.67 μF and 15 kV/356 μF capacitor banks. It has charged the capacitor bank up to rated voltage with maximum charging current of 150 mA and the average charging rate of 3.4 kJ/s. The output current of the power supply is limited by reducing the switching frequency at 5 kHz, 3.3 kHz, and 1.7 kHz and tested with 45 kV/1.67 μF capacitor bank. The protection circuit is included in the power supply for over current, under voltage, and over temperature. The design details and the experimental testing results of the power supply for resonant current, output current, and voltage traces of the power supply with capacitive, resistive, and short circuited load are presented and discussed.

High-efficiency thermal switch based on topological Josephson junctions

NASA Astrophysics Data System (ADS)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the widemore » bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.« less

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

Compact high voltage solid state switch

DOEpatents

Glidden, Steven C.

2003-09-23

A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

Remote switch actuator

DOEpatents

Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

2013-01-29

The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

Experimental Results from a Laser-Triggered, Gas-Insulated, Spark-Gap Switch

NASA Astrophysics Data System (ADS)

Camacho, J. F.; Ruden, E. L.; Domonkos, M. T.

2017-10-01

We are performing experiments on a laser-triggered spark-gap switch with the goal of studying the transition from photoionization to current conduction. The discharge of current through the switch is triggered by a focused 532-nm wavelength beam from a Q-switched Nd:YAG laser with a pulse duration of about 10 ns. The trigger pulse is delivered along the longitudinal axis of the switch, and the focal spot can be placed anywhere along the axis of the 5-mm, gas-insulated gap between the switch electrodes. The switch test bed is designed to support a variety of working gases (e.g., Ar, N2) over a range of pressures. Electrical and optical diagnostics are used to measure switch performance as a function of parameters such as charge voltage, trigger pulse energy, insulating gas pressure, and gas species. A Mach-Zehnder imaging interferometer system operating at 532 nm is being used to obtain interferograms of the discharge plasma in the switch. We are also developing a 1064-nm interferometry diagnostic in an attempt to measure plasma free electron and neutral gas density profiles simultaneously within the switch gap. Results from our most recent experiments will be presented.

Thermionic gas switch

DOEpatents

Hatch, George L.; Brummond, William A.; Barrus, Donald M.

1986-01-01

A temperature responsive thermionic gas switch having folded electron emitting surfaces. An ionizable gas is located between the emitter and an interior surface of a collector, coaxial with the emitter. In response to the temperature exceeding a predetermined level, sufficient electrons are derived from the emitter to cause the gas in the gap between the emitter and collector to become ionized, whereby a very large increase in current in the gap occurs. Due to the folded emitter surface area of the switch, increasing the "on/off" current ratio and adjusting the "on" current capacity is accomplished.

Electrical motor/generator drive apparatus and method

DOEpatents

Su, Gui Jia

2013-02-12

The present disclosure includes electrical motor/generator drive systems and methods that significantly reduce inverter direct-current (DC) bus ripple currents and thus the volume and cost of a capacitor. The drive methodology is based on a segmented drive system that does not add switches or passive components but involves reconfiguring inverter switches and motor stator winding connections in a way that allows the formation of multiple, independent drive units and the use of simple alternated switching and optimized Pulse Width Modulation (PWM) schemes to eliminate or significantly reduce the capacitor ripple current.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, Emanuel M.

1987-01-01

A high-power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, E.M.

1984-06-05

A high power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime.

Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

NASA Astrophysics Data System (ADS)

Mangasa Simanjuntak, Firman; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-09-01

We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 104 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.

An Energy Saving Green Plug Device for Nonlinear Loads

NASA Astrophysics Data System (ADS)

Bloul, Albe; Sharaf, Adel; El-Hawary, Mohamed

2018-03-01

The paper presents a low cost a FACTS Based flexible fuzzy logic based modulated/switched tuned arm filter and Green Plug compensation (SFC-GP) scheme for single-phase nonlinear loads ensuring both voltage stabilization and efficient energy utilization. The new Green Plug-Switched filter compensator SFC modulated LC-Filter PWM Switched Capacitive Compensation Devices is controlled using a fuzzy logic regulator to enhance power quality, improve power factor at the source and reduce switching transients and inrush current conditions as well harmonic contents in source current. The FACTS based SFC-GP Device is a member of family of Green Plug/Filters/Compensation Schemes used for efficient energy utilization, power quality enhancement and voltage/inrush current/soft starting control using a dynamic error driven fuzzy logic controller (FLC). The device with fuzzy logic controller is validated using the Matlab / Simulink Software Environment for enhanced power quality (PQ), improved power factor and reduced inrush currents. This is achieved using modulated PWM Switching of the Filter-Capacitive compensation scheme to cope with dynamic type nonlinear and inrush cyclical loads..

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

Learning Switching Control: A Tank Level-Control Exercise

ERIC Educational Resources Information Center

Pasamontes, M.; Alvarez, J. D.; Guzman, J. L.; Berenguel, M.

2012-01-01

A key topic in multicontroller strategies is the mechanism for switching between controllers, depending on the current operating point. The objective of the switching mechanism is to keep the control action coherent. To help students understand the switching strategy involved in multicontroller schema and the relationship between the system…

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

PubMed

Pickett, Matthew D; Williams, R Stanley

2012-06-01

We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance). The switching speeds of 110 × 110 nm(2) devices were found to be Δt(ON) = 700 ps and Δt(OFF) = 2:3 ns while the switching energies were of the order of 100 fJ. We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale. These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits.

Tunneling Nanoelectromechanical Switches Based on Compressible Molecular Thin Films.

PubMed

Niroui, Farnaz; Wang, Annie I; Sletten, Ellen M; Song, Yi; Kong, Jing; Yablonovitch, Eli; Swager, Timothy M; Lang, Jeffrey H; Bulović, Vladimir

2015-08-25

Abrupt switching behavior and near-zero leakage current of nanoelectromechanical (NEM) switches are advantageous properties through which NEMs can outperform conventional semiconductor electrical switches. To date, however, typical NEMs structures require high actuation voltages and can prematurely fail through permanent adhesion (defined as stiction) of device components. To overcome these challenges, in the present work we propose a NEM switch, termed a "squitch," which is designed to electromechanically modulate the tunneling current through a nanometer-scale gap defined by an organic molecular film sandwiched between two electrodes. When voltage is applied across the electrodes, the generated electrostatic force compresses the sandwiched molecular layer, thereby reducing the tunneling gap and causing an exponential increase in the current through the device. The presence of the molecular layer avoids direct contact of the electrodes during the switching process. Furthermore, as the layer is compressed, the increasing surface adhesion forces are balanced by the elastic restoring force of the deformed molecules which can promote zero net stiction and recoverable switching. Through numerical analysis, we demonstrate the potential of optimizing squitch design to enable large on-off ratios beyond 6 orders of magnitude with operation in the sub-1 V regime and with nanoseconds switching times. Our preliminary experimental results based on metal-molecule-graphene devices suggest the feasibility of the proposed tunneling switching mechanism. With optimization of device design and material engineering, squitches can give rise to a broad range of low-power electronic applications.

Study of switching transients in high frequency converters

NASA Technical Reports Server (NTRS)

Zinger, Donald S.; Elbuluk, Malik E.; Lee, Tony

1993-01-01

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.

Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current

DOE PAGES

Park, Woon Ik; Kim, Jong Min; Jeong, Jae Won; ...

2015-03-17

Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge 2Sb 2Te 5) and amore » heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.« less

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

View of the current distribution "bus" atop switching cabinets within ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View of the current distribution "bus" atop switching cabinets within the former transformer building. Looking northwest - Childs-Irving Hydroelectric Project, Childs System, Childs Powerhouse, Forest Service Road 708/502, Camp Verde, Yavapai County, AZ

Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

PubMed

Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

2017-12-01

We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor

NASA Astrophysics Data System (ADS)

Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J.; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

2017-12-01

We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr2VO3FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C4 (2 ×2 ) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C4 (2 ×2 ) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C4 state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

Variable temperature performance of a fully screen printed transistor switch

NASA Astrophysics Data System (ADS)

Zambou, Serges; Magunje, Batsirai; Rhyme, Setshedi; Walton, Stanley D.; Idowu, M. Florence; Unuigbe, David; Britton, David T.; Härting, Margit

2016-12-01

This article reports on the variable temperature performance of a flexible printed transistor which works as a current driven switch. In this work, electronic ink is formulated from nanostructured silicon produced by milling polycrystalline silicon. The study of the silicon active layer shows that its conductivity is based on thermal activation of carriers, and could be used as active layers in active devices. We further report on the transistors switching operation and their electrical performance under variable temperature. The reliability of the transistors at constant current bias was also investigated. Analysis of the electrical transfer characteristics from 340 to 10 K showed that the printed devices' current ON/OFF ratio increases as temperature decreases making it a better switch at lower temperatures. A constant current bias on a terminal for up to six hours shows extraordinary stability in electrical performance of the device.

Method and apparatus for controlling current in inductive loads such as large diameter coils

DOEpatents

Riveros, Carlos A.

1981-01-01

A method and apparatus for controlling electric current in loads that are essentially inductive, such that sparking and "ringing" current problems are reduced or eliminated. The circuit apparatus employs a pair of solid state switches (each of which switch may be an array of connected or parallel solid state switching devices such as transistors) and means for controlling those switches such that a power supply supplying two d.c. voltages (e.g. positive 150 volts d.c. and negative 150 volts d.c.) at low resistance may be connected across an essentially inductive load (e.g. a 6 gauge wire loop one hundred meters in diameter) alternatively and such that the first solid state switch is turned off and the second is turned on such that both are not on at the same time but the first turned on and the other on in less time than the inductive time constant (L/R) so that the load is essentially always presented with a low resistance path across its input. In this manner a steady AC current may be delivered to the load at a frequency desired. Shut-off problems are avoided by gradually shortening the period of switching to less than the time constant so that the maximum energy contained in the inductive load is reduced to approximately zero and dissipated in the inherent resistance. The invention circuit may be employed by adjusting the timing of switching to deliver a desired waveform (such as sinusoidal) to the load.

Current-induced switching of magnetic molecules on topological insulator surfaces

NASA Astrophysics Data System (ADS)

Locane, Elina; Brouwer, Piet W.

2017-03-01

Electrical currents at the surface or edge of a topological insulator are intrinsically spin polarized. We show that such surface or edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or edge of a topological insulator. For the edge of a two-dimensional topological insulator as well as for the surface of a three-dimensional topological insulator the application of a well-chosen surface or edge current can lead to a complete polarization of the molecule if the molecule's magnetic anisotropy axis is appropriately aligned with the current direction. For a generic orientation of the molecule a nonzero but incomplete polarization is obtained. We calculate the probability distribution of the magnetic states and the switching rates as a function of the applied current.

A CW Gunn Diode Switching Element.

ERIC Educational Resources Information Center

Hurtado, Marco; Rosenbaum, Fred J.

As part of a study of the application of communication satellites to educational development, certain technical aspects of such a system were examined. A current controlled bistable switching element using a CW Gunn diode is reported on here. With modest circuits switching rates of the order of 10 MHz have been obtained. Switching is initiated by…

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

NASA Astrophysics Data System (ADS)

Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-12-01

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

DOE Office of Scientific and Technical Information (OSTI.GOV)

She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of themore » one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.« less

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Temporally Shaped Current Pulses on a Two-Cavity Linear Transformer Driver System

DTIC Science & Technology

2011-06-01

essentially at a fraction of the total switch voltage. Non-uniform corona current characteristics of the different corona needles could cause imperfect...withstand twice the capacitor voltage. A pulse applied to the switch trigger electrodes initiate closure of each switch. We have arranged triggering in...internal cavity potential to ground, allows the trigger electrode of the spark gaps to be at ground potential during charging, and eliminates a

Design Method of Digital Optimal Control Scheme and Multiple Paralleled Bridge Type Current Amplifier for Generating Gradient Magnetic Fields in MRI Systems

NASA Astrophysics Data System (ADS)

Watanabe, Shuji; Takano, Hiroshi; Fukuda, Hiroya; Hiraki, Eiji; Nakaoka, Mutsuo

This paper deals with a digital control scheme of multiple paralleled high frequency switching current amplifier with four-quadrant chopper for generating gradient magnetic fields in MRI (Magnetic Resonance Imaging) systems. In order to track high precise current pattern in Gradient Coils (GC), the proposal current amplifier cancels the switching current ripples in GC with each other and designed optimum switching gate pulse patterns without influences of the large filter current ripple amplitude. The optimal control implementation and the linear control theory in GC current amplifiers have affinity to each other with excellent characteristics. The digital control system can be realized easily through the digital control implementation, DSPs or microprocessors. Multiple-parallel operational microprocessors realize two or higher paralleled GC current pattern tracking amplifier with optimal control design and excellent results are given for improving the image quality of MRI systems.

Push-pull switching power amplifier

NASA Technical Reports Server (NTRS)

Cuk, Slobodan M. (Inventor)

1980-01-01

A true push-pull switching power amplifier is disclosed utilizing two dc-to-dc converters. Each converter is comprised of two inductances, one inductance in series with a DC source and the other inductor in series with the output load, and an electrical energy transferring device with storage capability, namely storage capacitance, with suitable switching means between the inductances to obtain DC level conversion, where the switching means allows bidirectional current (and power) flow, and the switching means of one dc-to-dc converter is driven by the complement of a square-wave switching signal for the other dc-to-dc converter for true push-pull operation. For reduction of current ripple, the inductances in each of the two converters may be coupled, and with proper design of the coupling, the ripple can be reduced to zero at either the input or the output, but preferably the output.

Medicare Part D Beneficiaries' Plan Switching Decisions and Information Processing.

PubMed

Han, Jayoung; Urmie, Julie

2017-03-01

Medicare Part D beneficiaries tend not to switch plans despite the government's efforts to engage beneficiaries in the plan switching process. Understanding current and alternative plan features is a necessary step to make informed plan switching decisions. This study explored beneficiaries' plan switching using a mixed-methods approach, with a focus on the concept of information processing. We found large variation in beneficiary comprehension of plan information among both switchers and nonswitchers. Knowledge about alternative plans was especially poor, with only about half of switchers and 2 in 10 nonswitchers being well informed about plans other than their current plan. We also found that helpers had a prominent role in plan decision making-nearly twice as many switchers as nonswitchers worked with helpers for their plan selection. Our study suggests that easier access to helpers as well as helpers' extensive involvement in the decision-making process promote informed plan switching decisions.

Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current

NASA Astrophysics Data System (ADS)

Kim, Sung Min; Song, Emil B.; Lee, Sejoon; Seo, Sunae; Seo, David H.; Hwang, Yongha; Candler, R.; Wang, Kang L.

2011-07-01

Suspended few-layer graphene beam electro-mechanical switches (SGSs) with 0.15 μm air-gap are fabricated and electrically characterized. The SGS shows an abrupt on/off current characteristics with minimal off current. In conjunction with the narrow air-gap, the outstanding mechanical properties of graphene enable the mechanical switch to operate at a very low pull-in voltage (VPI) of 1.85 V, which is compatible with conventional complimentary metal-oxide-semiconductor (CMOS) circuit requirements. In addition, we show that the pull-in voltage exhibits an inverse dependence on the beam length.

Switch Detection in Preschoolers' Cognitive Flexibility

ERIC Educational Resources Information Center

Chevalier, Nicolas; Wiebe, Sandra A.; Huber, Kristina L.; Espy, Kimberly Andrews

2011-01-01

The current study addressed the role of switch detection in cognitive flexibility by testing the effect of transition cues (i.e., cues that directly signal the need to switch or maintain a given task goal) in a cued set-shifting paradigm at 5 years of age. Children performed better, especially on switch trials, when transition cues were combined…

Triggered plasma opening switch

DOEpatents

Mendel, Clifford W.

1988-01-01

A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

Fault-tolerant power distribution system

NASA Technical Reports Server (NTRS)

Volp, Jeffrey A. (Inventor)

1987-01-01

A fault-tolerant power distribution system which includes a plurality of power sources and a plurality of nodes responsive thereto for supplying power to one or more loads associated with each node. Each node includes a plurality of switching circuits, each of which preferably uses a power field effect transistor which provides a diode operation when power is first applied to the nodes and which thereafter provides bi-directional current flow through the switching circuit in a manner such that a low voltage drop is produced in each direction. Each switching circuit includes circuitry for disabling the power field effect transistor when the current in the switching circuit exceeds a preselected value.

Development of a switched integrator amplifier for high-accuracy optical measurements.

PubMed

Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

2008-11-01

In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed.

Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor

NASA Astrophysics Data System (ADS)

Sakamoto, Toshitsugu; Tada, Munehiro; Tsuji, Yukihide; Makiyama, Hideki; Hasegawa, Takumi; Yamamoto, Yoshiki; Okanishi, Shinobu; Banno, Naoki; Miyamura, Makoto; Okamoto, Koichiro; Iguchi, Noriyuki; Ogasahara, Yasuhiro; Oda, Hidekazu; Kamohara, Shiro; Yamagata, Yasushi; Sugii, Nobuyuki; Hada, Hiromitsu

2015-04-01

We developed an atom-switch read-only memory (ROM) fabricated on silicon-on-thin-buried-oxide (SOTB) for use in a low-power microcontroller for the first time. An atom switch with a low programming voltage and large ON/OFF conductance ratio is suitable for low-power nonvolatile memory. The atom-switch ROM using an SOTB transistor uses a 0.34-1.2 V operating voltage and 12 µA/MHz active current (or 4.5 µW/MHz active power). Furthermore, the sleep current is as low as 0.4 µA when a body bias voltage is applied to the SOTB.

Current-induced switching in CoGa/L10 MnGa/(CoGa)/Pt structure with different thicknesses

NASA Astrophysics Data System (ADS)

Ranjbar, R.; Suzuki, K. Z.; Mizukami, S.

2018-06-01

In this paper, we present the results of our study into current-induced spin-orbit torque (SOT) switching in perpendicularly magnetized CoGa/MnGa/Pt trilayers with different thicknesses of MnGa and Pt. The SOT switching was observed for all films that undergo Joule heating. We also investigate SOT switching in the bottom (CoGa)/MnGa/top(CoGa/Pt) films with different top layers. Although both the bottom and top layers contribute to the SOT, the relative magnitudes of the switching current densities JC in the top and bottom layers indicate that the SOT is dominant in the top layer. The JC as a function of thickness is discussed in terms of the magnetic properties and resistivity. Experimental data suggested that the MnGa thickness dependence of JC may originate from the perpendicular magnetic anisotropy thickness product Kueff t value. On the other hand, JC as a function of the Pt thickness shows weak dependence. This may be attributed to the slight change of spin-Hall angle θSH value with different thicknesses of Pt, when we assumed that the SOT switching is primarily due to the spin-Hall effect.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, E.M.

1987-02-10

A high-power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime. 10 figs.

Shuttle-promoted nano-mechanical current switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Taegeun, E-mail: tsong@ictp.it; Kiselev, Mikhail N.; Gorelik, Leonid Y.

2015-09-21

We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instabilitymore » and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.« less

High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

NASA Astrophysics Data System (ADS)

Sommerer, Timothy J.

2014-05-01

We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowinska, Malgorzata, E-mail: sowinska@ihp-microelectronics.com; Bertaud, Thomas; Walczyk, Damian

2014-05-28

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in themore » conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.« less

Nondissipative optimum charge regulator

NASA Technical Reports Server (NTRS)

Rosen, R.; Vitebsky, J. N.

1970-01-01

Optimum charge regulator provides constant level charge/discharge control of storage batteries. Basic power transfer and control is performed by solar panel coupled to battery through power switching circuit. Optimum controller senses battery current and modifies duty cycle of switching circuit to maximize current available to battery.

Current Bypassing Properties by Thermal Switch for PCS Application on NMR/MRI HTS Magnets

NASA Astrophysics Data System (ADS)

Kim, S. B.; Takahashi, M.; Saito, R.; Park, Y. J.; Lee, M. W.; Oh, Y. K.; Ann, H. S.

We develop the compact NMR/MRI device using high temperature superconducting (HTS) wires with the persistent current mode operating. So, the joint techniques between 2G wires are very important issue and many studies have been carried out. Recently, the Kbigdot JOINS, Inc. has developed successfully the high performance superconducting joints between 2G wires by partial melting diffusion and oxygenation annealing process [1]. In this study, the current bypassing properties in a loop-shaped 2G wire are measured experimentally to develop the permanent current switch (PSC). The current bypassing properties of loop-shaped test coil wound with 2G wire (GdBCO) are evaluated by measured the self-magnetic field due to bypassed current by Hall sensors. The strain gauge was used as heater for persistent current switch, and thermal properties against various thermal inputs were investigated experimentally.

Fundamental studies on initiation and evolution of multi-channel discharges and their application to next generation pulsed power machines.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwarz, Jens; Savage, Mark E.; Lucero, Diego Jose

Future pulsed power systems may rely on linear transformer driver (LTD) technology. The LTD's will be the building blocks for a driver that can deliver higher current than the Z-Machine. The LTD's would require tens of thousands of low inductance ( %3C 85nH), high voltage (200 kV DC) switches with high reliability and long lifetime ( 10 4 shots). Sandia's Z-Machine employs 36 megavolt class switches that are laser triggered by a single channel discharge. This is feasible for tens of switches but the high inductance and short switch life- time associated with the single channel discharge are undesirable formore » future machines. Thus the fundamental problem is how to lower inductance and losses while increasing switch life- time and reliability. These goals can be achieved by increasing the number of current-carrying channels. The rail gap switch is ideal for this purpose. Although those switches have been extensively studied during the past decades, each effort has only characterized a particular switch. There is no comprehensive understanding of the underlying physics that would allow predictive capability for arbitrary switch geometry. We have studied rail gap switches via an extensive suite of advanced diagnostics in synergy with theoretical physics and advanced modeling capability. Design and topology of multichannel switches as they relate to discharge dynamics are investigated. This involves electrically and optically triggered rail gaps, as well as discrete multi-site switch concepts.« less

Remote two-wire data entry method and device

DOEpatents

Kronberg, James W.

1995-01-01

A device for detecting switch closure such as in a keypad for entering data comprising a matrix of conductor pairs and switches, each pair of conductors shorted by the pressing of a particular switch, and current-regulating devices on each conductor for limiting current in one direction and passing it without limit in the other direction. The device is driven by alternating current. The ends of the conductors in a conductor pair limit current of opposing polarities with respect to each other so that the signal on a shorted pair is an alternating current signal with a unique combination of a positive and a negative peak, which, when analyzed, allows the determination of which key was pressed. The binary identification of the pressed key is passed to the input port of a host device.

Method and apparatus for current-output peak detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Geronimo, Gianluigi

2017-01-24

A method and apparatus for a current-output peak detector. A current-output peak detector circuit is disclosed and works in two phases. The peak detector circuit includes switches to switch the peak detector circuit from the first phase to the second phase upon detection of the peak voltage of an input voltage signal. The peak detector generates a current output with a high degree of accuracy in the second phase.

Study of Electromagnetic Repulsion Switch to High Speed Reclosing and Recover Time Characteristics of Superconductor

NASA Astrophysics Data System (ADS)

Koyama, Tomonori; Kaiho, Katsuyuki; Yamaguchi, Iwao; Yanabu, Satoru

Using a high-temperature superconductor, we constructed and tested a model superconducting fault current limiter (SFCL). The superconductor and vacuum interrupter as the commutation switch were connected in parallel using a bypass coil. When the fault current flows in this equipment, the superconductor is quenched and the current is then transferred to the parallel coil due to the voltage drop in the superconductor. This large current in the parallel coil actuates the magnetic repulsion mechanism of the vacuum interrupter and the current in the superconductor is broken. Using this equipment, the current flow time in the superconductor can be easily minimized. On the other hand, the fault current is also easily limited by large reactance of the parallel coil. This system has many merits. So, we introduced to electromagnetic repulsion switch. There is duty of high speed re-closing after interrupting fault current in the electrical power system. So the SFCL should be recovered to superconducting state before high speed re-closing. But, superconductor generated heat at the time of quench. It takes time to recover superconducting state. Therefore it is a matter of recovery time. In this paper, we studied recovery time of superconductor. Also, we proposed electromagnetic repulsion switch with reclosing system.

Comparative simulation of switching regimes of magnetic explosion generators by copper and aluminum magnetodynamic current breakers taking into account elastoplastic properties of materials

NASA Astrophysics Data System (ADS)

Bazanov, A. A.; Ivanovskii, A. V.; Panov, A. I.; Samodolov, A. V.; Sokolov, S. S.; Shaidullin, V. Sh.

2017-06-01

We report on the results of the computer simulation of the operation of magnetodynamic break switches used as the second stage of current pulse formation in magnetic explosion generators. The simulation was carried out under the conditions when the magnetic field energy density on the surface of the switching conductor as a function of the current through it was close to but still did not exceed the critical value typical of the beginning of electric explosion. In the computational model, we used the parameters of experimentally tested sample of a coil magnetic explosion generator that can store energy of up to 2.7 MJ in the inductive storage circuit and equipped with a primary explosion stage of the current pulse formation. It has been shown that the choice of the switching conductor material, as well as its elastoplastic properties, considerably affects the breaker speed. Comparative results of computer simulation for copper and aluminum have been considered.

Fast repetition rate (FRR) flasher

DOEpatents

Kolber, Zbigniew; Falkowski, Paul

1997-02-11

A fast repetition rate (FRR) flasher suitable for high flash photolysis including kinetic chemical and biological analysis. The flasher includes a power supply, a discharge capacitor operably connected to be charged by the power supply, and a flash lamp for producing a series of flashes in response to discharge of the discharge capacitor. A triggering circuit operably connected to the flash lamp initially ionizes the flash lamp. A current switch is operably connected between the flash lamp and the discharge capacitor. The current switch has at least one insulated gate bipolar transistor for switching current that is operable to initiate a controllable discharge of the discharge capacitor through the flash lamp. Control means connected to the current switch for controlling the rate of discharge of the discharge capacitor thereby to effectively keep the flash lamp in an ionized state between Successive discharges of the discharge capacitor. Advantageously, the control means is operable to discharge the discharge capacitor at a rate greater than 10,000 Hz and even up to a rate greater than about 250,000 Hz.

Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

NASA Astrophysics Data System (ADS)

Wu, Mingzhong

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Park, Byung-Gook

2016-08-01

A study on the bipolar-resistive switching of an Ni/SiN/Si-based resistive random-access memory (RRAM) device shows that the influences of the reset power and the resistance value of the low-resistance state (LRS) on the reset-switching transitions are strong. For a low LRS with a large conducting path, the sharp reset switching, which requires a high reset power (>7 mW), was observed, whereas for a high LRS with small multiple-conducting paths, the step-by-step reset switching with a low reset power (<7 mW) was observed. The attainment of higher nonlinear current-voltage ( I-V) characteristics in terms of the step-by-step reset switching is due to the steep current-increased region of the trap-controlled space charge-limited current (SCLC) model. A multilevel cell (MLC) operation, for which the reset stop voltage ( V STOP) is used in the DC sweep mode and an incremental amplitude is used in the pulse mode for the step-by-step reset switching, is demonstrated here. The results of the present study suggest that well-controlled conducting paths in a SiN-based RRAM device, which are not too strong and not too weak, offer considerable potential for the realization of low-power and high-density crossbar-array applications.

Concepts, characterization, and modeling of MEMS microswitches with gold contacts in MUMPs

NASA Astrophysics Data System (ADS)

Lafontan, Xavier; Dufaza, Christian; Robert, Michel; Pressecq, Francis; Perez, Guy

2001-04-01

This paper demonstrates that RF MEMS micro-switches can be realized with a low cost MEMS technology such as MUMPs. Two different switches are proposed, namely the hinged beam switch and the gold overflowing switch. Their concepts, design and characterization are described in details. On-resistance as low as 5 - 6 (Omega) for the gold overflowing switch and 2 - 3 (Omega) for the hinged beam switch have been measured. Finally, experimental measurements showed that force and electrical current had strong influences on the overall electrical contact.

Switching antipsychotic medications.

PubMed

Weiden, P J; Aquila, R; Dalheim, L; Standard, J M

1997-01-01

Compared with conventional antipsychotics, the so-called "atypical" antipsychotics promise improved side effect profiles and better control of the symptoms of schizophrenia. Therefore, most patients currently taking conventional antipsychotics could potentially benefit from a switch to an atypical antipsychotic. Often, the key issue in deciding whether to switch is the presence of countervailing factors that mitigate against the change. This paper discusses the indications and contraindications for switching antipsychotics, plus issues that require consideration before a switch is made. Also, the advantages and disadvantages of various switching techniques are discussed, with a particular focus on the newer antipsychotic olanzapine.

Fast infrared response of YBCO thin films

NASA Technical Reports Server (NTRS)

Ballentine, P. H.; Kadin, A. M.; Donaldson, W. R.; Scofield, J. H.; Bajuk, L.

1990-01-01

The response to short infrared pulses of some epitaxial YBCO films prepared by sputter deposition and by electron-beam evaporation is reported. The response is found to be essentially bolometric on the ns timescale, with some indirect hints of nonequilibrium electron transport on the ps scale. Fast switching could be obtained either by biasing the switch close to the critical current or by cooling the film below about 20 K. These results are encouraging for potential application to a high-current optically-triggered opening switch.

Hardware Model Of A Shipboard Zonal Electrical Distribution System (ZEDS): Alternating Current/Direct Current (AC/DC)

DTIC Science & Technology

2010-06-01

essential to fostering the loyalty , dedication and pride that enables the diverse student population within your department to be the very best systems...that I have enjoyed in my short time with you. Without you in my life, to share my success, I could not have ever achieved the level of satisfaction ...used. A typical wall mounted light switch is a single pole single throw switch. A common industrial motor start switch is a three pole single throw

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

A three-level support method for smooth switching of the micro-grid operation model

NASA Astrophysics Data System (ADS)

Zong, Yuanyang; Gong, Dongliang; Zhang, Jianzhou; Liu, Bin; Wang, Yun

2018-01-01

Smooth switching of micro-grid between the grid-connected operation mode and off-grid operation mode is one of the key technologies to ensure it runs flexible and efficiently. The basic control strategy and the switching principle of micro-grid are analyzed in this paper. The reasons for the fluctuations of the voltage and the frequency in the switching process are analyzed from views of power balance and control strategy, and the operation mode switching strategy has been improved targeted. From the three aspects of controller’s current inner loop reference signal, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level security strategy for smooth switching of micro-grid operation mode is proposed. From the three aspects of controller’s current inner loop reference signal tracking, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level strategy for smooth switching of micro-grid operation mode is proposed. At last, it is proved by simulation that the proposed control strategy can make the switching process smooth and stable, the fluctuation problem of the voltage and frequency has been effectively improved.

Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Durai, Suresh; Manivannan, Anbarasu

2016-11-01

Although phase-change memory (PCM) offers promising features for a ‘universal memory’ owing to high-speed and non-volatility, achieving fast electrical switching remains a key challenge. In this work, a correlation between the rate of applied voltage and the dynamics of threshold-switching is investigated at picosecond-timescale. A distinct characteristic feature of enabling a rapid threshold-switching at a critical voltage known as the threshold voltage as validated by an instantaneous response of steep current rise from an amorphous off to on state is achieved within 250 picoseconds and this is followed by a slower current rise leading to crystallization. Also, we demonstrate that the extraordinary nature of threshold-switching dynamics in AgInSbTe cells is independent to the rate of applied voltage unlike other chalcogenide-based phase change materials exhibiting the voltage dependent transient switching characteristics. Furthermore, numerical solutions of time-dependent conduction process validate the experimental results, which reveal the electronic nature of threshold-switching. These findings of steep threshold-switching of ‘sub-50 ps delay time’, opens up a new way for achieving high-speed non-volatile memory for mainstream computing.

Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2-x /ZrO2 bilayer memory

NASA Astrophysics Data System (ADS)

Huang, Ruomeng; Yan, Xingzhao; Morgan, Katrina A.; Charlton, Martin D. B.; (Kees de Groot, C. H.

2017-05-01

We report here a ZrO2-x /ZrO2-based bilayer resistive switching memory with unique properties that enables the selection of the switching mode by applying different electroforming current compliances. Two opposite polarity modes, positive bipolar and negative bipolar, correspond to the switching in the ZrO2 and ZrO2-x layer, respectively. The ZrO2 layer is proved to be responsible for the negative bipolar mode which is also observed in a ZrO2 single layer device. The oxygen deficient ZrO2-x layer plays the dominant role in the positive bipolar mode, which is exclusive to the bilayer memory. A systematic investigation of the ZrO2-x composition in the bilayer memory suggests that ZrO1.8 layer demonstrates optimum switching performance with low switching voltage, narrow switching voltage distribution and good cycling endurance. An excess of oxygen vacancies, beyond this composition, leads to a deterioration of switching properties. The formation and dissolution of the oxygen vacancy filament model has been proposed to explain both polarity switching behaviours and the improved properties in the bilayer positive bipolar mode are attributed to the confined oxygen vacancy filament size within the ZrO2-x layer.

The Implementation Of Solid State Switches In A Parallel Configuration To Gain Output Current Capacity In A High Current Capacitive Discharge Unit (CDU).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaves, Mario Paul

2017-07-01

For my project I have selected to research and design a high current pulse system, which will be externally triggered from a 5V pulse. The research will be conducted in the region of paralleling the solid state switches for a higher current output, as well as to see if there will be any other advantages in doing so. The end use of the paralleled solid state switches will be used on a Capacitive Discharge Unit (CDU). For the first part of my project, I have set my focus on the design of the circuit, selection of components, and simulation ofmore » the circuit.« less

High-explosive driven crowbar switch

DOEpatents

Dike, Robert S.; Kewish, Jr., Ralph W.

1976-01-13

The disclosure relates to a compact explosive driven switch for use as a low resistance, low inductance crowbar switch. A high-explosive charge extrudes a deformable conductive metallic plate through a polyethylene insulating layer to achieve a hard current contact with a supportive annular conductor.

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

PubMed

Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

2018-04-01

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

DOE PAGES

Li, Peng; Liu, Tao; Chang, Houchen; ...

2016-09-01

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe 12O 19 bilayer where the BaFe 12O 19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control themore » up and down states of the remnant magnetization in the BaFe 12O 19 film when the film is magnetized by an in-plane magnetic field. Furthermore, it can reduce or increase the switching field of the BaFe 12O 19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.« less

Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; Demann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J. S.; Porod, Wolfgang; Field, Stuart B.; Tang, Jinke; Marconi, Mario C.; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

2016-09-01

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

NASA Astrophysics Data System (ADS)

Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

2018-05-01

A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

Micro optical fiber display switch based on the magnetohydrodynamic (MHD) principle

NASA Astrophysics Data System (ADS)

Lian, Kun; Heng, Khee-Hang

2001-09-01

This paper reports on a research effort to design, microfabricate and test an optical fiber display switch based on magneto hydrodynamic (MHD) principal. The switch is driven by the Lorentz force and can be used to turn on/off the light. The SU-8 photoresist and UV light source were used for prototype fabrication in order to lower the cost. With a magnetic field supplied by an external permanent magnet, and a plus electrical current supplied across the two inert sidewall electrodes, the distributed body force generated will produce a pressure difference on the fluid mercury in the switch chamber. By change the direction of current flow, the mercury can turn on or cut off the light pass in less than 10 ms. The major advantages of a MHD-based micro-switch are that it does not contain any solid moving parts and power consumption is much smaller comparing to the relay type switches. This switch can be manufactured by molding gin batch production and may have potential applications in extremely bright traffic control,, high intensity advertising display, and communication.

The Roles of Relative Linguistic Proficiency and Modality Switching in Language Switch Cost: Evidence from Chinese Visual Unimodal and Bimodal Bilinguals.

PubMed

Lu, Aitao; Wang, Lu; Guo, Yuyang; Zeng, Jiahong; Zheng, Dongping; Wang, Xiaolu; Shao, Yulan; Wang, Ruiming

2017-09-01

The current study investigated the mechanism of language switching in unbalanced visual unimodal bilinguals as well as balanced and unbalanced bimodal bilinguals during a picture naming task. All three groups exhibited significant switch costs across two languages, with symmetrical switch cost in balanced bimodal bilinguals and asymmetrical switch cost in unbalanced unimodal bilinguals and bimodal bilinguals. Moreover, the relative proficiency of the two languages but not their absolute proficiency had an effect on language switch cost. For the bimodal bilinguals the language switch cost also arose from modality switching. These findings suggest that the language switch cost might originate from multiple sources from both outside (e.g., modality switching) and inside (e.g., the relative proficiency of the two languages) the linguistic lexicon.

30 CFR 7.64 - Technical requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... produce the required firing current is attained. (d) Firing switch. The switch used to initiate the... current is available to the blasting circuit. (e) Firing line terminals. The terminals used to connect the blasting circuit to the blasting unit shall— (1) Provide a secure, low-resistance connection to the...

30 CFR 7.64 - Technical requirements.

Code of Federal Regulations, 2011 CFR

2011-07-01

... produce the required firing current is attained. (d) Firing switch. The switch used to initiate the... current is available to the blasting circuit. (e) Firing line terminals. The terminals used to connect the blasting circuit to the blasting unit shall— (1) Provide a secure, low-resistance connection to the...

High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, J. S.

2014-04-28

We report the high power operation of nitrogen doped, vanadium compensated, 6H-SiC, extrinsic photoconductive switches with improved vanadium and nitrogen dopant density. Photoconductive switching tests are performed on 1 mm thick, m-plane, switch substrates at switch voltage and currents up to 17 kV and 1.5 kA, respectively. Sub-ohm minimum switch on resistance is achieved for peak optical intensities ≥35 MW/cm{sup 2} at 532 nm applied to the switch facet. A reduction of greater than nine orders of magnitude is observed in switch material resistivity between dark and illuminated states.

Plasma opening switch

DOEpatents

Savage, Mark E.; Mendel, Jr., Clifford W.

2001-01-01

A command triggered plasma opening switch assembly using an amplification stage. The assembly surrounds a coaxial transmission line and has a main plasma opening switch (POS) close to the load and a trigger POS upstream from the main POS. The trigger POS establishes two different current pathways through the assembly depended on whether it has received a trigger current pulse. The initial pathway has both POS's with plasma between their anodes and cathodes to form a short across the transmission line and isolating the load. The final current pathway is formed when the trigger POS receives a trigger current pulse which energizes its fast coil to push the conductive plasma out from between its anode and cathode, allowing the main transmission line current to pass to the fast coil of the main POS, thus pushing its plasma out the way so as to establish a direct current pathway to the load.

TaOx-based resistive switching memories: prospective and challenges

PubMed Central

2013-01-01

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production. PMID:24107610

Status report on Project Hercules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loree, D.; Giesselmann, M.; Kristiansen, M.

1993-01-01

Project Hercules is a project to improve ignitron switches which will then be used on the upgrade of Lawrence Livermore's Nova Laser for their ICF program. The goals of Hercules, which stands for High Energy Research Concerning the Ultimate Lifetime of Experimental Switches, are to lifetime test (up to 10,000 shots) prototype ignitrons or other switches with the required Nova current and coulomb parameters (300 kA, 200 C), recommend design changes, and retest the second generation switches. This report describes the design and construction of the test circuit and necessary diagnostics. The details of the design and construction of themore » test circuit and necessary diagnostics. The details of the design and construction of a 0.5 MJ electrolytic capacitor bank and a semi-automatic diagnostic/control system are described. The required test run data include peak current and corresponding tube voltage for every shot, entire current and voltage waveforms every few shots, and ignitor resistance values every few shots. Additionally, the conversion of a 120 kW, 12 kV constant voltage supply to an 8 A constant current supply with the use of six SCRs and a commercial control board will be described. The final results of this project will be lifetime data at high current and high coulomb for and improvements on some of the best of the new generation of pulsed power switches.« less

Quantum switching of π-electron rotations in a nonplanar chiral molecule by using linearly polarized UV laser pulses.

PubMed

Mineo, Hirobumi; Yamaki, Masahiro; Teranishi, Yoshiaki; Hayashi, Michitoshi; Lin, Sheng Hsien; Fujimura, Yuichi

2012-09-05

Nonplanar chiral aromatic molecules are candidates for use as building blocks of multidimensional switching devices because the π electrons can generate ring currents with a variety of directions. We employed (P)-2,2'-biphenol because four patterns of π-electron rotations along the two phenol rings are possible and theoretically determine how quantum switching of the π-electron rotations can be realized. We found that each rotational pattern can be driven by a coherent excitation of two electronic states under two conditions: one is the symmetry of the electronic states and the other is their relative phase. On the basis of the results of quantum dynamics simulations, we propose a quantum control method for sequential switching among the four rotational patterns that can be performed by using ultrashort overlapped pump and dump pulses with properly selected relative phases and photon polarization directions. The results serve as a theoretical basis for the design of confined ultrafast switching of ring currents of nonplanar molecules and further current-induced magnetic fluxes of more sophisticated systems.

Giant thermal spin torque assisted magnetic tunnel junction switching

NASA Astrophysics Data System (ADS)

Pushp, Aakash

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal-spin-torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. Reference: A. Pushp*, T. Phung*, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin, 112, 6585-6590 (2015).

Double-injection, deep-impurity switch development

NASA Technical Reports Server (NTRS)

Whitson, D. W.

1985-01-01

The overall objective of this program was the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI) sup 2 silicon switch that operates in the 2-10 kV range with conduction current values of 5 A at 2 kV and 1 A at 10 kV. Other major specifications include a holding voltage of 10 V with no gate current, 10 microsec switching time, and power dissipation of 50 W at 75 C. It was decided to concentrate on the lateral circular devices in order to optimize the gold diffusion. This resulted in devices that are much better switches (approx.1 micro sec switching time), and in a gold diffusion process that is much more controllable than those previously developed. Some results with injection-gated devices were also obtained. The current conduction for V less than VT was analyzed and seen to agree, for the most part, with Lampert's theory. Various sections of this report describe the device designs, wafer-processing techniques, and various measurements which include ac and dc characteristics and four-point probe.

Remote two-wire data entry method and device

DOEpatents

Kronberg, J.W.

1991-01-01

This invention is comprised of a device for detecting switch closure such as in a keypad for entering data comprising a matrix of conductor pairs and switches, each pair of conductors shorted by the pressing of a particular switch, and current-regulating devices on each conductor for limiting current in one direction and passing it without limit in the other direction. The device is driven by alternating current. The ends of the conductors in a conductor pair limit current of opposing polarities with respect to each other so that the signal on a shorted pair is an alternating current signal with a unique combination of a positive and a negative peak, which, when analyzed, allows the determination of which key was pressed. The binary identification of the pressed key is passed to the input port of a host device.

Overload protection for switching regulators

NASA Technical Reports Server (NTRS)

Lachochi, E.

1980-01-01

Circuit protects all output lines of switching regulator against overloads without requiring current sensors on every line. If overload is sensed, device short circuits bias on switching transistor so that power is rapidly cut off from loads. Circuit also includes delay network to inhibit erroneous operation during startup.

Load insensitive electrical device. [power converters for supplying direct current at one voltage from a source at another voltage

NASA Technical Reports Server (NTRS)

Schwarz, F. C. (Inventor)

1974-01-01

A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

Optimization of the Switch Mechanism in a Circuit Breaker Using MBD Based Simulation

PubMed Central

Jang, Jin-Seok; Yoon, Chang-Gyu; Ryu, Chi-Young; Kim, Hyun-Woo; Bae, Byung-Tae; Yoo, Wan-Suk

2015-01-01

A circuit breaker is widely used to protect electric power system from fault currents or system errors; in particular, the opening mechanism in a circuit breaker is important to protect current overflow in the electric system. In this paper, multibody dynamic model of a circuit breaker including switch mechanism was developed including the electromagnetic actuator system. Since the opening mechanism operates sequentially, optimization of the switch mechanism was carried out to improve the current breaking time. In the optimization process, design parameters were selected from length and shape of each latch, which changes pivot points of bearings to shorten the breaking time. To validate optimization results, computational results were compared to physical tests with a high speed camera. Opening time of the optimized mechanism was decreased by 2.3 ms, which was proved by experiments. Switch mechanism design process can be improved including contact-latch system by using this process. PMID:25918740

Using a small hybrid pulse power transformer unit as component of a high-current opening switch for a railgun

NASA Astrophysics Data System (ADS)

Leung, E. M. W.; Bailey, R. E.; Michels, P. H.

1989-03-01

The hybrid pulse power transformer (HPPT) is a unique concept utilizing the ultrafast superconducting-to-normal transition process of a superconductor. When used in the form of a hybrid transformer current-zero switch (HTCS), this creates an approach in which the large, high-power, high-current opening switch in a conventional railgun system can be eliminated. This represents an innovative application of superconductivity to pulsed power conditioning required for the Strategic Defense Initiative (SDI). The authors explain the working principles of a 100-KJ unit capable of switching up to 500 kA at a frequency of 0.5 Hz and with a system efficiency of greater than 90 percent. Circuit analysis using a computer code called SPICE PLUS was used to verify the HTCS concept. This concept can be scaled up to applications in the several mega-ampere levels.

Development, Integration and Testing of Automated Triggering Circuit for Hybrid DC Circuit Breaker

NASA Astrophysics Data System (ADS)

Kanabar, Deven; Roy, Swati; Dodiya, Chiragkumar; Pradhan, Subrata

2017-04-01

A novel concept of Hybrid DC circuit breaker having combination of mechanical switch and static switch provides arc-less current commutation into the dump resistor during quench in superconducting magnet operation. The triggering of mechanical and static switches in Hybrid DC breaker can be automatized which can effectively reduce the overall current commutation time of hybrid DC circuit breaker and make the operation independent of opening time of mechanical switch. With this view, a dedicated control circuit (auto-triggering circuit) has been developed which can decide the timing and pulse duration for mechanical switch as well as static switch from the operating parameters. This circuit has been tested with dummy parameters and thereafter integrated with the actual test set up of hybrid DC circuit breaker. This paper deals with the conceptual design of the auto-triggering circuit, its control logic and operation. The test results of Hybrid DC circuit breaker using this circuit have also been discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Peng; Liu, Tao; Chang, Houchen

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe 12O 19 bilayer where the BaFe 12O 19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control themore » up and down states of the remnant magnetization in the BaFe 12O 19 film when the film is magnetized by an in-plane magnetic field. Furthermore, it can reduce or increase the switching field of the BaFe 12O 19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.« less

Testing Single Phase IGBT H-Bridge Switch Plates for the High Voltage Converter Modulator at the Spallation Neutron Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peplov, Vladimir V; Anderson, David E; Solley, Dennis J

2014-01-01

Three IGBT H-bridge switching networks are used in each High Voltage Converter Modulator (HVCM) system at the Spallation Neutron Source (SNS) to generate drive currents to three boost transformer primaries switching between positive and negative bus voltages at 20 kHz. Every switch plate assembly is tested before installing it into an operational HVCM. A Single Phase Test Stand has been built for this purpose, and it is used for adjustment, measurement and testing of different configurations of switch plates. This paper will present a description of the Test Stand configuration and discuss the results of testing switch plates with twomore » different types of IGBT gate drivers currently in use on the HVCM systems. Comparison of timing characteristics of the original and new drivers and the resulting performance reinforces the necessity to replace the original H-bridge network drivers with the upgraded units.« less

System for automatically switching transformer coupled lines

NASA Technical Reports Server (NTRS)

Dwinell, W. S. (Inventor)

1979-01-01

A system is presented for automatically controlling transformer coupled alternating current electric lines. The secondary winding of each transformer is provided with a center tap. A switching circuit is connected to the center taps of a pair of secondary windings and includes a switch controller. An impedance is connected between the center taps of the opposite pair of secondary windings. The switching circuit has continuity when the AC lines are continuous and discontinuity with any disconnect of the AC lines. Normally open switching means are provided in at least one AC line. The switch controller automatically opens the switching means when the AC lines become separated.

Resonant snubber inverter

DOEpatents

Lai, Jih-Sheng; Young, Sr., Robert W.; Chen, Daoshen; Scudiere, Matthew B.; Ott, Jr., George W.; White, Clifford P.; McKeever, John W.

1997-01-01

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Resonant snubber inverter

DOEpatents

Lai, J.S.; Young, R.W. Sr.; Chen, D.; Scudiere, M.B.; Ott, G.W. Jr.; White, C.P.; McKeever, J.W.

1997-06-24

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 14 figs.

Reducing Ripple In A Switching Voltage Regulator

NASA Technical Reports Server (NTRS)

Paulkovich, John; Rodriguez, G. Ernest

1994-01-01

Ripple voltage in output of switching voltage regulator reduced substantially by simple additional circuitry adding little to overall weight and size of regulator. Heretofore, additional filtering circuitry needed to obtain comparable reductions in ripple typically as large and heavy as original regulator. Current opposing ripple current injected into filter capacitor.

Theoretical Modeling of the Plasma Erosion Opening Switch for Inductive Storage Applications.

DTIC Science & Technology

1983-10-27

instantaneous and depends on the switch and load characteristics. In general T is finite and T >T >0. Thus energy will be lost to switch heatings s op - as...Top, then the switch opening time is the dominant factor and T T Clearly T must be small compared with the decay time of the load S op 5 current, T_

Multi-megavolt low jitter multistage switch

DOEpatents

Humphreys, D.R.; Penn, K.J. Jr.

1985-06-19

It is one object of the present invention to provide a multistage switch capable of holding off numerous megavolts, until triggered, from a particle beam accelerator of the type used for inertial confinement fusion. The invention provides a multistage switch having low timing jitter and capable of producing multiple spark channels for spreading current over a wider area to reduce electrode damage and increase switch lifetime. The switch has fairly uniform electric fields and a short spark gap for laser triggering and is engineered to prevent insulator breakdowns.

Multi-gap high impedance plasma opening switch

DOEpatents

Mason, Rodney J.

1996-01-01

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

NASA Technical Reports Server (NTRS)

Edwards, Dean B. (Inventor); Rippel, Wally E. (Inventor)

1986-01-01

A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

Delta connected resonant snubber circuit

DOEpatents

Lai, J.S.; Peng, F.Z.; Young, R.W. Sr.; Ott, G.W. Jr.

1998-01-20

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 36 figs.

Delta connected resonant snubber circuit

DOEpatents

Lai, Jih-Sheng; Peng, Fang Zheng; Young, Sr., Robert W.; Ott, Jr., George W.

1998-01-01

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

AC motor controller with 180 degree conductive switches

NASA Technical Reports Server (NTRS)

Oximberg, Carol A. (Inventor)

1995-01-01

An ac motor controller is operated by a modified time-switching scheme where the switches of the inverter are on for electrical-phase-and-rotation intervals of 180.degree. as opposed to the conventional 120.degree.. The motor is provided with three-phase drive windings, a power inverter for power supplied from a dc power source consisting of six switches, and a motor controller which controls the current controlled switches in voltage-fed mode. During full power, each switch is gated continuously for three successive intervals of 60.degree. and modulated for only one of said intervals. Thus, during each 60.degree. interval, the two switches with like signs are on continuously and the switch with the opposite sign is modulated.

Enhancing the x-ray output of a single-wire explosion with a gas-puff based plasma opening switch

NASA Astrophysics Data System (ADS)

Engelbrecht, Joseph T.; Ouart, Nicholas D.; Qi, Niansheng; de Grouchy, Philip W.; Shelkovenko, Tatiana A.; Pikuz, Sergey A.; Banasek, Jacob T.; Potter, William M.; Rocco, Sophia V.; Hammer, David A.; Kusse, Bruce R.; Giuliani, John L.

2018-02-01

We present experiments performed on the 1 MA COBRA generator using a low density, annular, gas-puff z-pinch implosion as an opening switch to rapidly transfer a current pulse into a single metal wire on axis. This gas-puff on axial wire configuration was studied for its promise as an opening switch and as a means of enhancing the x-ray output of the wire. We demonstrate that current can be switched from the gas-puff plasma into the wire, and that the timing of the switch can be controlled by the gas-puff plenum backing pressure. X-ray detector measurements indicate that for low plenum pressure Kr or Xe shots with a copper wire, this configuration can offer a significant enhancement in the peak intensity and temporal distribution of radiation in the 1-10 keV range.

High-voltage, high-power, solid-state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Rapid mapping of polarization switching through complete information acquisition

NASA Astrophysics Data System (ADS)

Somnath, Suhas; Belianinov, Alex; Kalinin, Sergei V.; Jesse, Stephen

2016-12-01

Polarization switching in ferroelectric and multiferroic materials underpins a broad range of current and emergent applications, ranging from random access memories to field-effect transistors, and tunnelling devices. Switching in these materials is exquisitely sensitive to local defects and microstructure on the nanometre scale, necessitating spatially resolved high-resolution studies of these phenomena. Classical piezoresponse force microscopy and spectroscopy, although providing necessary spatial resolution, are fundamentally limited in data acquisition rates and energy resolution. This limitation stems from their two-tiered measurement protocol that combines slow (~1 s) switching and fast (~10 kHz-1 MHz) detection waveforms. Here we develop an approach for rapid probing of ferroelectric switching using direct strain detection of material response to probe bias. This approach, facilitated by high-sensitivity electronics and adaptive filtering, enables spectroscopic imaging at a rate 3,504 times faster the current state of the art, achieving high-veracity imaging of polarization dynamics in complex microstructures.

Control strategy based on SPWM switching patterns for grid connected photovoltaic inverter

NASA Astrophysics Data System (ADS)

Hassaine, L.; Mraoui, A.

2017-02-01

Generally, for lower installation of photovoltaic systems connected to the grid, pulse width modulation (PWM) is a widely used technique for controlling the voltage source inverters injects currents into the grid. The current injected must be sinusoidal with reduced harmonic distortion. In this paper, a digital implementation of a control strategy based on PWM switching patterns for an inverter for photovoltaic system connected to the grid is presented. This strategy synchronize a sinusoidal inverter output current with a grid voltage The digital implementation of the proposed PWM switching pattern when is compared with the conventional one exhibit the advantage: Simplicity, reduction of the memory requirements and power calculation for the control

Technical Study on Improvement of Endurance Capability of Limit Short-circuit Current of Charge Control SMART Meter

NASA Astrophysics Data System (ADS)

Li, W. W.; Du, Z. Z.; Yuan, R. m.; Xiong, D. Z.; Shi, E. W.; Lu, G. N.; Dai, Z. Y.; Chen, X. Q.; Jiang, Z. Y.; Lv, Y. G.

2017-10-01

Smart meter represents the development direction of energy-saving smart grid in the future. The load switch, one of the core parts of smart meter, should be of high reliability, safety and endurance capability of limit short-circuit current. For this reason, this paper discusses the quick simulation of relationship between attraction and counterforce of load switch without iteration, establishes dual response surface model of attraction and counterforce and optimizes the design scheme of load switch for charge control smart meter, thus increasing electromagnetic attraction and spring counterforce. In this way, this paper puts forward a method to improve the withstand capacity of limit short-circuit current.

Electrical studies of Ge4Sb1Te5 devices for memory applications

NASA Astrophysics Data System (ADS)

Sangeetha, B. G.; Shylashree, N.

2018-05-01

In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

Field-current phase diagrams of in-plane spin transfer torque memory cells with low effective magnetization storage layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

San Emeterio Alvarez, L.; Lacoste, B.; Rodmacq, B.

2014-05-07

Field-current phase diagrams were measured on in-plane anisotropy Co{sub 60}Fe{sub 20}B{sub 20} magnetic tunnel junctions to obtain the spin transfer torque (STT) field-current switching window. These measurements were used to characterise junctions with varying free layer thicknesses from 2.5 down to 1.1 nm having a reduced effective demagnetizing field due to the perpendicular magnetic anisotropy at CoFeB/MgO interface. Diagrams were obtained with 100 ns current pulses, of either same or alternating polarity. When consecutive pulses have the same polarity, it is possible to realize the STT switching even for conditions having a low switching probability. This was evidenced in diagrams with consecutivemore » pulses of alternating polarity, with 100% switching obtained at 4.7 MA/cm{sup 2}, compared to the lower 3.4 MA/cm{sup 2} value for same polarity pulses. Although the low level of the current density window is higher in alternating polarity diagrams, the field window in both diagrams is the same and therefore independent of the pulse polarity sequence.« less

Bypass apparatus and method for series connected energy storage devices

DOEpatents

Rouillard, Jean; Comte, Christophe; Daigle, Dominik

2000-01-01

A bypass apparatus and method for series connected energy storage devices. Each of the energy storage devices coupled to a common series connection has an associated bypass unit connected thereto in parallel. A current bypass unit includes a sensor which is coupled in parallel with an associated energy storage device or cell and senses an energy parameter indicative of an energy state of the cell, such as cell voltage. A bypass switch is coupled in parallel with the energy storage cell and operable between a non-activated state and an activated state. The bypass switch, when in the non-activated state, is substantially non-conductive with respect to current passing through the energy storage cell and, when in the activated state, provides a bypass current path for passing current to the series connection so as to bypass the associated cell. A controller controls activation of the bypass switch in response to the voltage of the cell deviating from a pre-established voltage setpoint. The controller may be included within the bypass unit or be disposed on a control platform external to the bypass unit. The bypass switch may, when activated, establish a permanent or a temporary bypass current path.

The Effect of Hierarchical Task Representations on Task Selection in Voluntary Task Switching

ERIC Educational Resources Information Center

Weaver, Starla M.; Arrington, Catherine M.

2013-01-01

The current study explored the potential for hierarchical representations to influence action selection during voluntary task switching. Participants switched between 4 individual task elements. In Experiment 1, participants were encouraged to represent the task elements as grouped within a hierarchy based on experimental manipulations of varying…

Control and Interference in Task Switching--A Review

ERIC Educational Resources Information Center

Kiesel, Andrea; Steinhauser, Marco; Wendt, Mike; Falkenstein, Michael; Jost, Kerstin; Philipp, Andrea M.; Koch, Iring

2010-01-01

The task-switching paradigm offers enormous possibilities to study cognitive control as well as task interference. The current review provides an overview of recent research on both topics. First, we review different experimental approaches to task switching, such as comparing mixed-task blocks with single-task blocks, predictable task-switching…

ERP indices of persisting and current inhibitory control: a study of saccadic task switching.

PubMed

Mueller, S C; Swainson, R; Jackson, G M

2009-03-01

Previous studies have found that inhibition of a biologically dominant prepotent response tendency is required during the execution of a less familiar, non-prepotent response. However, the lasting impact of this inhibition and the cognitive mechanisms to flexibly switch between prepotent and non-prepotent responses are poorly understood. We examined the neurophysiological (ERP) correlates of switching between prosaccade and antisaccade responses in 22 healthy volunteers. The behavioural data showed significant switch costs in terms of response latency for the prosaccade task only. These costs occurred exclusively in trials when preparation for the switch was limited to 300 ms, suggesting that inhibition of the prepotent prosaccade task either passively dissipated or was actively overcome during the longer 1000 ms preparation interval. In the neurophysiological data, a late frontal negativity (LFN) was visible during preparation for a switch to the prosaccade task that was absent when switching to the antisaccade task, which may reflect the overcoming of persisting inhibition. During task implementation both saccade types were associated with a late parietal positivity (LPP) for switch relative to repetition trials, possibly indicating attentional reorienting to the switched-to task, and visible only with short preparation intervals. When the prosaccade and antisaccade task were contrasted directly during task implementation, the antisaccade task exhibited increased stimulus-locked N2 and decreased P3 amplitudes indicative of active inhibition. The present findings indicate that neurophysiological markers of persisting and current inhibition can be revealed using a prosaccade/antisaccade-switching task.

Particle in cell simulation of peaking switch for breakdown evaluation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Umbarkar, Sachin B.; Bindu, S.; Mangalvedekar, H.A.

2014-07-01

Marx generator connected to peaking capacitor and peaking switch can generate Ultra-Wideband (UWB) radiation. A new peaking switch is designed for converting the existing nanosecond Marx generator to a UWB source. The paper explains the particle in cell (PIC) simulation for this peaking switch, using MAGIC 3D software. This peaking switch electrode is made up of copper tungsten material and is fixed inside the hermitically sealed derlin material. The switch can withstand a gas pressure up to 13.5 kg/cm{sup 2}. The lower electrode of the switch is connected to the last stage of the Marx generator. Initially Marx generator (withoutmore » peaking stage) in air; gives the output pulse with peak amplitude of 113.75 kV and pulse rise time of 25 ns. Thus, we design a new peaking switch to improve the rise time of output pulse and to pressurize this peaking switch separately (i.e. Marx and peaking switch is at different pressure). The PIC simulation gives the particle charge density, current density, E counter plot, emitted electron current, and particle energy along the axis of gap between electrodes. The charge injection and electric field dependence on ionic dissociation phenomenon are briefly analyzed using this simulation. The model is simulated with different gases (N{sub 2}, H{sub 2}, and Air) under different pressure (2 kg/cm{sup 2}, 5 kg/cm{sup 2}, 10 kg/cm{sup 2}). (author)« less

Electron-Impact-Ionization and Electron-Attachment Cross Sections of Radicals Important in Transient Gaseous Discharges.

DTIC Science & Technology

1988-02-05

for understanding the microscopic processes of electrical discharges and for designing gaseous discharge switches. High power gaseous discharge switches...half-maximum) energy resolution. The electron gun and ion extraction were of the same design of Srivastava at the Jet Propulsion Laboratory. Ions...photons. - The observed current switching can be applied to the design of discharge switches. Elec- tron transport parameters are needed for the

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

Video signal processing system uses gated current mode switches to perform high speed multiplication and digital-to-analog conversion

NASA Technical Reports Server (NTRS)

Gilliland, M. G.; Rougelot, R. S.; Schumaker, R. A.

1966-01-01

Video signal processor uses special-purpose integrated circuits with nonsaturating current mode switching to accept texture and color information from a digital computer in a visual spaceflight simulator and to combine these, for display on color CRT with analog information concerning fading.

Switching power supply

DOEpatents

Mihalka, A.M.

1984-06-05

The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

Fast repetition rate (FRR) flasher

DOEpatents

Kolber, Z.; Falkowski, P.

1997-02-11

A fast repetition rate (FRR) flasher is described suitable for high flash photolysis including kinetic chemical and biological analysis. The flasher includes a power supply, a discharge capacitor operably connected to be charged by the power supply, and a flash lamp for producing a series of flashes in response to discharge of the discharge capacitor. A triggering circuit operably connected to the flash lamp initially ionizes the flash lamp. A current switch is operably connected between the flash lamp and the discharge capacitor. The current switch has at least one insulated gate bipolar transistor for switching current that is operable to initiate a controllable discharge of the discharge capacitor through the flash lamp. Control means connected to the current switch for controlling the rate of discharge of the discharge capacitor thereby to effectively keep the flash lamp in an ionized state between successive discharges of the discharge capacitor. Advantageously, the control means is operable to discharge the discharge capacitor at a rate greater than 10,000 Hz and even up to a rate greater than about 250,000 Hz. 14 figs.

Characterization and snubbing of a bidirectional MCT in a resonant ac link converter

NASA Technical Reports Server (NTRS)

Lee, Tony; Elbuluk, Malik E.; Zinger, Donald S.

1993-01-01

The MOS-Controlled Thyristor (MCT) is emerging as a powerful switch that combines the better characteristics of existing power devices. A study of switching stresses on an MCT switch under zero voltage resonant switching is presented. The MCT is used as a bidirectional switch in an ac/ac pulse density modulated inverter for induction motor drive. Current and voltage spikes are observed and analyzed with variations in the timing of the switching. Different snubber circuit configurations are under investigation to minimize the effect of these transients. The results will be extended to study and test the MCT switching in a medium power (5 hp) induction motor drive.

Reactive power compensator

DOEpatents

El-Sharkawi, Mohamed A.; Venkata, Subrahmanyam S.; Chen, Mingliang; Andexler, George; Huang, Tony

1992-01-01

A system and method for determining and providing reactive power compensation for an inductive load. A reactive power compensator (50,50') monitors the voltage and current flowing through each of three distribution lines (52a, 52b, 52c), which are supplying three-phase power to one or more inductive loads. Using signals indicative of the current on each of these lines when the voltage waveform on the line crosses zero, the reactive power compensator determines a reactive power compensator capacitance that must be connected to the lines to maintain a desired VAR level, power factor, or line voltage. Alternatively, an operator can manually select a specific capacitance for connection to each line, or the capacitance can be selected based on a time schedule. The reactive power compensator produces control signals, which are coupled through optical fibers (102/106) to a switch driver (110, 110') to select specific compensation capacitors (112) for connections to each line. The switch driver develops triggering signals that are supplied to a plurality of series-connected solid state switches (350), which control charge current in one direction in respect to ground for each compensation capacitor. During each cycle, current flows from ground to charge the capacitors as the voltage on the line begins to go negative from its positive peak value. The triggering signals are applied to gate the solid state switches into a conducting state when the potential on the lines and on the capacitors reaches a negative peak value, thereby minimizing both the potential difference and across the charge current through the switches when they begin to conduct. Any harmonic distortion on the potential and current carried by the lines is filtered out from the current and potential signals used by the reactive power compensator so that it does not affect the determination of the required reactive compensation.

Reactive Power Compensator.

DOEpatents

El-Sharkawi, M.A.; Venkata, S.S.; Chen, M.; Andexler, G.; Huang, T.

1992-07-28

A system and method for determining and providing reactive power compensation for an inductive load. A reactive power compensator (50,50') monitors the voltage and current flowing through each of three distribution lines (52a, 52b, 52c), which are supplying three-phase power to one or more inductive loads. Using signals indicative of the current on each of these lines when the voltage waveform on the line crosses zero, the reactive power compensator determines a reactive power compensator capacitance that must be connected to the lines to maintain a desired VAR level, power factor, or line voltage. Alternatively, an operator can manually select a specific capacitance for connection to each line, or the capacitance can be selected based on a time schedule. The reactive power compensator produces control signals, which are coupled through optical fibers (102/106) to a switch driver (110, 110') to select specific compensation capacitors (112) for connections to each line. The switch driver develops triggering signals that are supplied to a plurality of series-connected solid state switches (350), which control charge current in one direction in respect to ground for each compensation capacitor. During each cycle, current flows from ground to charge the capacitors as the voltage on the line begins to go negative from its positive peak value. The triggering signals are applied to gate the solid state switches into a conducting state when the potential on the lines and on the capacitors reaches a negative peak value, thereby minimizing both the potential difference and across the charge current through the switches when they begin to conduct. Any harmonic distortion on the potential and current carried by the lines is filtered out from the current and potential signals used by the reactive power compensator so that it does not affect the determination of the required reactive compensation. 26 figs.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Power inverter with optical isolation

DOEpatents

Duncan, Paul G.; Schroeder, John Alan

2005-12-06

An optically isolated power electronic power conversion circuit that includes an input electrical power source, a heat pipe, a power electronic switch or plurality of interconnected power electronic switches, a mechanism for connecting the switch to the input power source, a mechanism for connecting comprising an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or input bus bars, an optically isolated drive circuit connected to the switch, a heat sink assembly upon which the power electronic switch or switches is mounted, an output load, a mechanism for connecting the switch to the output load, the mechanism for connecting including an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or output bus bars, at least one a fiber optic temperature sensor mounted on the heat sink assembly, at least one fiber optic current sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic voltage sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic current sensor mounted on the input power interconnection cable and/or input bus bar, and at least one fiber optic voltage sensor mounted on the input power interconnection cable and/or input bus bar.

A graphite based STT-RAM cell with reduction in switching current

NASA Astrophysics Data System (ADS)

Varghani, Ali; Peiravi, Ali

2015-10-01

Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for "universal memory" because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively low power dissipation. However, problems with low write speed and large write current are important existing challenges in STT-RAM design and there is a tradeoff between them and data retention time. In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and 180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current with a short pulse width (before applying STT current and independent of it) through four middle graphene layers of the tunnel barrier, a 27% reduction in the amplitude of the switching current (for fast switching time of 2 ns) or a 58% reduction in its pulse width is achieved without any reduction in data retention time. Finally, the effect of downscaling of technology on the proposed structure is evaluated. A reduction of 31.6% and 9% in switching current is achieved for 90 and 22 nm cell width respectively by passing sufficient current (100 μA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented Micro Magnetic Framework (OOMMF).

Novel control system of the high-voltage IGBT-switch

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Mamontov, Y. I.; Gusev, A. I.; Pedos, M. S.

2017-05-01

HV solid-state switch control circuit was developed and tested. The switch was made with series connection IGBT-transistors. The distinctive feature of the circuit is an ability to fine-tune the switching time of every transistor. Simultaneous switching provides balancing of the dynamic voltage at all switch elements. A separate control board switches on and off every transistor. On and off signals from the main conductor are sent to the board by current pulses of different polarity. A positive pulse provides the transistor switch-on, while a negative pulse provides their switch-off. The time interval between pulses defines the time when the switch is turned on. The minimum time when the switch is turned on equals to a few microseconds, while the maximum time is not limited. This paper shows the test results of 4 kV switch prototype. The switch was used to produce rectangular pulses of a microsecond range under resistive load. The possibility to generate the damped harmonic oscillations was also tested. On the basis of this approach, positive testing results open up a possibility to design switches under an operating voltage of tens kilovolts.

Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

NASA Astrophysics Data System (ADS)

Kaltenbacher, Thomas; Caspers, Fritz; Doser, Michael; Kellerbauer, Alban; Pribyl, Wolfgang

2013-11-01

A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2 K and in a high magnetic field of at least 0.5 T. This piezoelectric switch shows very low insertion loss of less than -0.1 dB within a bandwidth of 100 MHz when operated at 4.2 K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

Multi-gap high impedance plasma opening switch

DOEpatents

Mason, R.J.

1996-10-22

A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

Pulsed Power Supply Based on Magnetic Energy Storage for Non-Destructive High Field Magnets

NASA Astrophysics Data System (ADS)

Aubert, G.; Defoug, S.; Joss, W.; Sala, P.; Dubois, M.; Kuchinsk, V.

2004-11-01

The first test results of a recently built pulsed power supply based on magnetic energy storage will be described. The system consists of the 16 kV shock alternator with a short-circuit power of 3600 MVA of the VOLTA Testing Center of the Schneider Electric SA company, a step-down transformer with a ratio of 1/24, a three-phase diode bridge designed for a current rising exponentially to 120 kA, and a big, 10 ton, heavy, 10 mH aluminum storage coil. The system is designed to store 72 MJ, normal operation will be at 50 MJ, and will work with voltages up to 20 kV. A transfer of 20% of the stored energy into the high field coil should be possible. Special making switches and interrupters have been developed to switch the high currents in a very short time. For safety and redundancy two independent monitoring systems control the energy transfer. A sequencing control system operates the switches on the ac side and protective switches on the dc side, a specially developed real-time control-monitoring system checks several currents and voltages and commands the dc circuit breakers and making switches.

Combined EEG-fNIRS decoding of motor attempt and imagery for brain switch control: an offline study in patients with tetraplegia.

PubMed

Blokland, Yvonne; Spyrou, Loukianos; Thijssen, Dick; Eijsvogels, Thijs; Colier, Willy; Floor-Westerdijk, Marianne; Vlek, Rutger; Bruhn, Jorgen; Farquhar, Jason

2014-03-01

Combining electrophysiological and hemodynamic features is a novel approach for improving current performance of brain switches based on sensorimotor rhythms (SMR). This study was conducted with a dual purpose: to test the feasibility of using a combined electroencephalogram/functional near-infrared spectroscopy (EEG-fNIRS) SMR-based brain switch in patients with tetraplegia, and to examine the performance difference between motor imagery and motor attempt for this user group. A general improvement was found when using both EEG and fNIRS features for classification as compared to using the single-modality EEG classifier, with average classification rates of 79% for attempted movement and 70% for imagined movement. For the control group, rates of 87% and 79% were obtained, respectively, where the "attempted movement" condition was replaced with "actual movement." A combined EEG-fNIRS system might be especially beneficial for users who lack sufficient control of current EEG-based brain switches. The average classification performance in the patient group for attempted movement was significantly higher than for imagined movement using the EEG-only as well as the combined classifier, arguing for the case of a paradigm shift in current brain switch research.

Integrated Joule switches for the control of current dynamics in parallel superconducting strips

NASA Astrophysics Data System (ADS)

Casaburi, A.; Heath, R. M.; Cristiano, R.; Ejrnaes, M.; Zen, N.; Ohkubo, M.; Hadfield, R. H.

2018-06-01

Understanding and harnessing the physics of the dynamic current distribution in parallel superconducting strips holds the key to creating next generation sensors for single molecule and single photon detection. Non-uniformity in the current distribution in parallel superconducting strips leads to low detection efficiency and unstable operation, preventing the scale up to large area sensors. Recent studies indicate that non-uniform current distributions occurring in parallel strips can be understood and modeled in the framework of the generalized London model. Here we build on this important physical insight, investigating an innovative design with integrated superconducting-to-resistive Joule switches to break the superconducting loops between the strips and thus control the current dynamics. Employing precision low temperature nano-optical techniques, we map the uniformity of the current distribution before- and after the resistive strip switching event, confirming the effectiveness of our design. These results provide important insights for the development of next generation large area superconducting strip-based sensors.

Ames Lab 101: Ultrafast Magnetic Switching

ScienceCinema

Wang; Jigang

2018-01-01

Ames Laboratory physicists have found a new way to switch magnetism that is at least 1000 times faster than currently used in magnetic memory technologies. Magnetic switching is used to encode information in hard drives, magnetic random access memory and other computing devices. The discovery potentially opens the door to terahertz and faster memory speeds.

Cognitive Flexibility in ASD; Task Switching with Emotional Faces

ERIC Educational Resources Information Center

de Vries, Marieke; Geurts, Hilde M.

2012-01-01

Children with autism spectrum disorders (ASDs) show daily cognitive flexibility deficits, but laboratory data are unconvincing. The current study aimed to bridge this gap. Thirty-one children with ASD (8-12 years) and 31 age- and IQ-matched typically developing children performed a gender emotion switch task. Unannounced switches and complex…

Cognates Facilitate Switches and Then Confusion: Contrasting Effects of Cascade versus Feedback on Language Selection

ERIC Educational Resources Information Center

Li, Chuchu; Gollan, Tamar H.

2018-01-01

The current study investigated the hypothesis that cognates (i.e., translation equivalents that overlap in form, e.g., "lemon" is "limón" in Spanish) facilitate language switches. Spanish-English bilinguals were cued to switch languages while repeatedly naming pictures with cognate versus noncognate names in separate…

Experimental Study on Short Circuit Phenomena in Air Switch of Distribution Line due to Sparkover between Different Poles on Which One Surge Arrester of the Three Ones is Omitted

NASA Astrophysics Data System (ADS)

Sato, Tomoyuki; Uemura, Satoshi; Asakawa, Akira; Yokoyama, Shigeru; Honda, Hideki; Horikoshi, Kazuhiro

In this study, we experimentally examined the possibility of the internal short circuit of an air switch due to the sparkover between different poles under the condition that no surge arrester exists in neighboring poles and one of three surge arresters is omitted at the pole with an air switch. Experiments at Shiobara Testing Yard and Akagi Testing Center of CRIEPI clarified the following. Fault current may flow via the grounding point of a pole with an air switch and that of the next pole on a different phase from grounded phase of the pole with an air switch. If the low-voltage wire, overhead ground wire or communication wire forms a short circuit between them, ultimately the air switch may burn out. Moreover Fault current continues even if the length of the short-circuit between different poles is increased. Although the increase of the short-circuit length results in the increase of wire impedance, the amount of increase is still small compared with source impedance.

A high-current rail-type gas switch with preionization by an additional corona discharge

NASA Astrophysics Data System (ADS)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

2016-12-01

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10-45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

Circulating current battery heater

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2001-01-01

A circuit for heating energy storage devices such as batteries is provided. The circuit includes a pair of switches connected in a half-bridge configuration. Unidirectional current conduction devices are connected in parallel with each switch. A series resonant element for storing energy is connected from the energy storage device to the pair of switches. An energy storage device for intermediate storage of energy is connected in a loop with the series resonant element and one of the switches. The energy storage device which is being heated is connected in a loop with the series resonant element and the other switch. Energy from the heated energy storage device is transferred to the switched network and then recirculated back to the battery. The flow of energy through the battery causes internal power dissipation due to electrical to chemical conversion inefficiencies. The dissipated power causes the internal temperature of the battery to increase. Higher internal temperatures expand the cold temperature operating range and energy capacity utilization of the battery. As disclosed, either fixed frequency or variable frequency modulation schemes may be used to control the network.

A Current Source Method For t(sub q) Measurement of Fast Switching Thyristors

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

2006-01-01

A current source driven circuit has been constructed to measure the turn-off time (t(sub q)) of fast-switching SiC thyristors. This circuit operates from a single power supply and a dual channel pulse generator to provide adjustment of forward current, magnitude and duration of reverse applied voltage, and rate of rise of reapplied forward voltage. Values of t(sub q) down to 100 ns can be resolved.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

NASA Astrophysics Data System (ADS)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

Cycling firing method for bypass operation of bridge converters

DOEpatents

Zabar, Zivan

1982-01-01

The bridge converter comprises a number of switching elements and an electronic logic system which regulated the electric power levels by controlling the firing, i.e., the initiation of the conduction period of the switching elements. Cyclic firing of said elements allows the direct current to bypass the alternating current system with high power factor and negligible losses.

Application Study of a High Temperature Superconducting Fault Current Limiter for Electric Power System

NASA Astrophysics Data System (ADS)

Naito, Yuji; Shimizu, Iwao; Yamaguchi, Iwao; Kaiho, Katsuyuki; Yanabu, Satoru

Using high temperature superconductor, a Superconducting Fault Current Limiter (SFCL) was made and tested. Superconductor and vacuum interrupter as commutation switch are connected in parallel with bypass coil. When a fault occurs and the excessive current flows, superconductor is first quenched and the current is transferred to bypass coil because on voltage drop of superconductor. At the same time, since magnetic field is generated by current which flows in bypass coil, commutation switch is immediately driven by electromagnetic repulsion plate connected to driving rod of vacuum interrupter, and superconductor is separated from this circuit. Using the testing model, we could separate the superconductor from a circuit due to movement of vacuum interrupter within half-cycle current and transfer all current to bypass coil. Since operation of a commutation switch is included in current limiting operation of this testing model, it is one of helpful circuit of development of SFCL in the future. Moreover, since it can make the consumed energy of superconductor small during fault state due to realization of high-speed switch with simple composition, the burden of superconductor is reduced compared with conventional resistive type SFCL and it is considered that the flexibility of a SFCL design increases. Cooperation with a circuit breaker was also considered, the trial calculation of a parameter and energy of operation is conducted and discussion in the case of installing the SFCL to electric power system is made.

Capacitance measuring device

DOEpatents

Andrews, W.H. Jr.

1984-08-01

A capacitance measuring circuit is provided in which an unknown capacitance is measured by comparing the charge stored in the unknown capacitor with that stored in a known capacitance. Equal and opposite voltages are repetitively simultaneously switched onto the capacitors through an electronic switch driven by a pulse generator to charge the capacitors during the ''on'' portion of the cycle. The stored charge is compared by summing discharge currents flowing through matched resistors at the input of a current sensor during the ''off'' portion of the switching cycle. The net current measured is thus proportional to the difference in value of the two capacitances. The circuit is capable of providing much needed accuracy and stability to a great variety of capacitance-based measurement devices at a relatively low cost.

Unity power factor converter

NASA Technical Reports Server (NTRS)

Wester, Gene W. (Inventor)

1980-01-01

A unity power factor converter capable of effecting either inversion (dc-to-dc) or rectification (ac-to-dc), and capable of providing bilateral power control from a DC source (or load) through an AC transmission line to a DC load (or source) for power flow in either direction, is comprised of comparators for comparing the AC current i with an AC signal i.sub.ref (or its phase inversion) derived from the AC ports to generate control signals to operate a switch control circuit for high speed switching to shape the AC current waveform to a sine waveform, and synchronize it in phase and frequency with the AC voltage at the AC ports, by selectively switching the connections to a series inductor as required to increase or decrease the current i.

Modulated spin orbit torque in a Pt/Co/Pt/YIG multilayer by nonequilibrium proximity effect

NASA Astrophysics Data System (ADS)

Liu, Q. B.; Meng, K. K.; Cai, Y. Z.; Qian, X. H.; Wu, Y. C.; Zheng, S. Q.; Jiang, Y.

2018-01-01

We have compared the spin orbit torque (SOT) induced magnetization switching in Pt/Co/Pt/Y3Fe5O12 (YIG) and Pt/Co/Pt/SiO2 multilayers. The critical switching current in Pt/Co/Pt/YIG is almost half of that in Pt/Co/Pt/SiO2. Through harmonic measurements, we demonstrated the enhancement of the effective spin Hall angle in Pt/Co/Pt/YIG. The increased efficiency of SOT is ascribed to the nonequilibrium proximity effect at the Pt/YIG interface, which suppresses the spin current reflection and enhances the effective spin accumulation at the Co/Pt interface. Our method can effectively reduce the switching current density and provide another way to modulate SOT.

Zinc-chlorine battery plant system and method

DOEpatents

Whittlesey, Curtis C.; Mashikian, Matthew S.

1981-01-01

A zinc-chlorine battery plant system and method of redirecting the electrical current around a failed battery module. The battery plant includes a power conditioning unit, a plurality of battery modules connected electrically in series to form battery strings, a plurality of battery strings electrically connected in parallel to the power conditioning unit, and a bypass switch for each battery module in the battery plant. The bypass switch includes a normally open main contact across the power terminals of the battery module, and a set of normally closed auxiliary contacts for controlling the supply of reactants electrochemically transformed in the cells of the battery module. Upon the determination of a failure condition, the bypass switch for the failed battery module is energized to close the main contact and open the auxiliary contacts. Within a short time, the electrical current through the battery module will substantially decrease due to the cutoff of the supply of reactants, and the electrical current flow through the battery string will be redirected through the main contact of the bypass switch.

An Improved Model Predictive Current Controller of Switched Reluctance Machines Using Time-Multiplexed Current Sensor

PubMed Central

Li, Bingchu; Ling, Xiao; Huang, Yixiang; Gong, Liang; Liu, Chengliang

2017-01-01

This paper presents a fixed-switching-frequency model predictive current controller using multiplexed current sensor for switched reluctance machine (SRM) drives. The converter was modified to distinguish currents from simultaneously excited phases during the sampling period. The only current sensor installed in the converter was time division multiplexing for phase current sampling. During the commutation stage, the control steps of adjacent phases were shifted so that sampling time was staggered. The maximum and minimum duty ratio of pulse width modulation (PWM) was limited to keep enough sampling time for analog-to-digital (A/D) conversion. Current sensor multiplexing was realized without complex adjustment of either driver circuit nor control algorithms, while it helps to reduce the cost and errors introduced in current sampling due to inconsistency between sensors. The proposed controller is validated by both simulation and experimental results with a 1.5 kW three-phase 12/8 SRM. Satisfied current sampling is received with little difference compared with independent phase current sensors for each phase. The proposed controller tracks the reference current profile as accurately as the model predictive current controller with independent phase current sensors, while having minor tracking errors compared with a hysteresis current controller. PMID:28513554

Comparison of patients undergoing switching versus augmentation of antipsychotic medications during treatment for schizophrenia.

PubMed

Ascher-Svanum, Haya; Brnabic, Alan Jm; Lawson, Anthony H; Kinon, Bruce J; Stauffer, Virginia L; Feldman, Peter D; Kelin, Katarina

2012-01-01

It is often difficult to determine whether a patient may best benefit by augmenting their current medication or switching them to another. This post-hoc analysis compares patients' clinical and functional profiles at the time their antipsychotic medications were either switched or augmented. Adult outpatients receiving oral antipsychotic treatment for schizophrenia were assessed during a 12-month international observational study. Clinical and functional measures were assessed at the time of first treatment switch/augmentation (0-14 days prior) and compared between Switched and Augmented patient groups. Due to low numbers of patients providing such data, interpretations are based on effect sizes. Data at the time of change were available for 87 patients: 53 Switched and 34 Augmented. Inadequate response was the primary reason for treatment change in both groups, whereas lack of adherence was more prevalent in the Switched group (26.4% vs 8.8%). Changes in clinical severity from study initiation to medication change were similar, as indicated by Clinical Global Impressions-Severity scores. However, physical and mental component scores of the 12-item Short-Form Health Survey improved in the Augmented group, but worsened in the Switched group. These findings suggest that the patient's worsening or lack of meaningful improvement prompts clinicians to switch antipsychotic medications, whereas when patients show some improvement, clinicians may be more likely to try bolstering the improvements through augmentation. Current findings are consistent with physicians' stated reasons for switching versus augmenting antipsychotics in the treatment of schizophrenia. Confirmation of these findings requires further research.

Evidence for phase change memory behavior in In2(SexTe1-x)3 thin films

NASA Astrophysics Data System (ADS)

Matheswaran, P.; Sathyamoorthy, R.; Asokan, K.

2012-08-01

Crystalline In2(Se0.5Te0.5)3 thin films are prepared by thermal evaporation and subsequently annealed at 300°C in Ar atmosphere. SEM image of the crystalline sample shows spherical nature of constituents, distributed uniformly throughout the surface. Island structure of the surface is clearly visible after switching. Elemental composition of the sample remains unchanged even after switching. Temperature dependent I-V analysis shows stoichiometric phase change at 80°C [from In2(Se0.5Te0.5)3 to In2Te3 and In2Se3 phase], where current switches three orders of magnitude higher than that in lower temperature. Further rise in temperature results increase in current only after switching, where threshold voltage remains constant.

Electrically-controlled nonlinear switching and multi-level storage characteristics in WOx film-based memory cells

NASA Astrophysics Data System (ADS)

Duan, W. J.; Wang, J. B.; Zhong, X. L.

2018-05-01

Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation memory due to its scalability, high integration density and non-volatile storage characteristics. Here, the multiple electrical characteristics in Pt/WOx/Pt cells are investigated. Both of the nonlinear switching and multi-level storage can be achieved by setting different compliance current in the same cell. The correlations among the current, time and temperature are analyzed by using contours and 3D surfaces. The switching mechanism is explained in terms of the formation and rupture of conductive filament which is related to oxygen vacancies. The experimental results show that the non-stoichiometric WOx film-based device offers a feasible way for the applications of oxide-based RRAMs.

Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

NASA Astrophysics Data System (ADS)

Thakre, Atul; Kumar, Ashok

2017-12-01

An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (˜ 2 V) and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ˜103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

PubMed Central

Chen, Kai-Huang; Tsai, Tsung-Ming; Cheng, Chien-Min; Huang, Shou-Jen; Chang, Kuan-Chang; Liang, Shu-Ping; Young, Tai-Fa

2017-01-01

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model. PMID:29283368

Conductance Switching Phenomena and H-Like Aggregates in Squarylium-Dye Langmuir-Blodgett Films

NASA Astrophysics Data System (ADS)

Kushida, Masahito; Inomata, Hisao; Tanaka, Yuichiro; Harada, Kieko; Saito, Kyoichi; Sugita, Kazuyuki

2002-03-01

The current-voltage characteristics of sandwich devices with the structure of top gold electrode/squarylium-dye Langmuir-Blodgett (SQ LB) films/bottom aluminum electrode indicated four kinds of conductivity depending on the evaporation conditions of the top gold electrode. The current densities of two, which showed conductance switching, of the four samples were 30-40 μA/cm2 and 20-30 mA/cm2 in the ON state. In the former case, the dependence of conductance switching voltage on the number of SQ LB films and ultraviolet-visible absorption spectra were studied. The results revealed that conductance switching phenomena were induced at the interface between the top gold electrode and SQ LB films, and caused by the presence of H-like aggregates in SQ LB films.

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Astrophysics Data System (ADS)

Sturman, J. C.

1985-05-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Quantum coherent π-electron rotations in a non-planar chiral molecule induced by using a linearly polarized UV laser pulse

NASA Astrophysics Data System (ADS)

Mineo, Hirobumi; Fujimura, Yuichi

2015-06-01

We propose an ultrafast quantum switching method of π-electron rotations, which are switched among four rotational patterns in a nonplanar chiral aromatic molecule (P)-2,2’- biphenol and perform the sequential switching among four rotational patterns which are performed by the overlapped pump-dump laser pulses. Coherent π-electron dynamics are generated by applying the linearly polarized UV pulse laser to create a pair of coherent quasidegenerated excited states. We also plot the time-dependent π-electron ring current, and discussed ring current transfer between two aromatic rings.

Explosive-driven, high speed, arcless switch

DOEpatents

Skogmo, P.J.; Tucker, T.J.

1986-05-02

An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

NASA Astrophysics Data System (ADS)

Maslovskaya, A. G.; Barabash, T. K.

2018-03-01

The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.

Explosive-driven, high speed, arcless switch

DOEpatents

Skogmo, Phillip J.; Tucker, Tillman J.

1987-01-01

An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

A solid-state dielectric elastomer switch for soft logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chau, Nixon; Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A.

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease ofmore » manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.« less

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

NASA Astrophysics Data System (ADS)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

A single-stage optical load-balanced switch for data centers.

PubMed

Huang, Qirui; Yeo, Yong-Kee; Zhou, Luying

2012-10-22

Load balancing is an attractive technique to achieve maximum throughput and optimal resource utilization in large-scale switching systems. However current electronic load-balanced switches suffer from severe problems in implementation cost, power consumption and scaling. To overcome these problems, in this paper we propose a single-stage optical load-balanced switch architecture based on an arrayed waveguide grating router (AWGR) in conjunction with fast tunable lasers. By reuse of the fast tunable lasers, the switch achieves both functions of load balancing and switching through the AWGR. With this architecture, proof-of-concept experiments have been conducted to investigate the feasibility of the optical load-balanced switch and to examine its physical performance. Compared to three-stage load-balanced switches, the reported switch needs only half of optical devices such as tunable lasers and AWGRs, which can provide a cost-effective solution for future data centers.

Current-level triggered plasma-opening switch

DOEpatents

Mendel, C.W.

1987-06-29

An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field. 5 figs.

STE/ICE (Simplified Test Equipment/Internal Combustion Engines) Design Guide for Vehicle Diagnostic Connector Assemblies

DTIC Science & Technology

1982-08-01

19 3.2 Diesel Engine Speed Transducer 20 3.3 Pressure Transducer 20 3.4 Temperature Transducer 22 3.5 Differential Pressure Switch 22 3.6 Differential... Pressure Switch , Multi-Point 22 3.7 Current Measurement Transducer 23 - 3.8 Electrolyte Level Probes 23 3.9 Diagnostic Connector 24 3.10 Harness...12258933 Differential Pressure Switch - Multi-point 12258934 K -. Differential Pressure Switch 12258938 Electrolyte Level Sensor 12258935 Shunt 1000

Current-level triggered plasma-opening switch

DOEpatents

Mendel, Clifford W.

1989-01-01

An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field.

Contact effects in light activated GaAs switches

NASA Astrophysics Data System (ADS)

Durkin, P. S.

1985-05-01

The purpose of this work was to examine the effects of various types of contacts on the switching behavior of a light-triggered power switch. The switch was constructed from a homogeneous wafer of chromium-doped gallium arsenide; the contacts were either ohmic, non-ohmic, or Schottky barriers. These were formed on the wafer in two geometries; both contacts on one side, and one contact spacings were used to permit the effects of the location of the existing laser pulse to be studied. A high voltage power supply (zero to 20 kV) was employed as the bias supply. A Nd:YAG laser, in the pulsed mode, was used to trigger the switch, which was mounted on a cold finger cooled to near liquid nitrogen temperature. Cooling reduced the dark current to manageable values (less than 1 micro A), and also reduced the avalanche breakdown voltage. The results of the measurements indicate that ohmic contacts produced more reliable switching than the non-ohmic or Schottky contacts, in as much as the shape of the output current pulse was better, and the number of pulses which the switches could sustain before the pulse shape deteriorated was greater, for the ohmic contacts. Surface discharge between the one-sided contacts obscured any differences in switching characteristics which might have depended on the location of the pulsed light excitation, so that no correlation between position and behavior could be obtained.

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

PubMed

Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; Kim, Sungho; Jeon, Sanghun; Lee, Sungjoo; Park, Jin-Hong

2017-08-16

In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10 5 ), excellent cyclic endurance (>10 3 ), and long retention time (>10 4 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.

A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

NASA Astrophysics Data System (ADS)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

Load-Dependent Soft-Switching Method of Half-Bridge Current Doubler for High-Voltage Point-of-Load Converter in Data Center Power Supplies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Yutian; Yang, Fei; Tolbert, Leon M.

With the increased cloud computing and digital information storage, the energy requirement of data centers keeps increasing. A high-voltage point of load (HV POL) with an input series output parallel structure is proposed to convert 400 to 1 VDC within a single stage to increase the power conversion efficiency. The symmetrical controlled half-bridge current doubler is selected as the converter topology in the HV POL. A load-dependent soft-switching method has been proposed with an auxiliary circuit that includes inductor, diode, and MOSFETs so that the hard-switching issue of typical symmetrical controlled half-bridge converters is resolved. The operation principles of themore » proposed soft-switching half-bridge current doubler have been analyzed in detail. Then, the necessity of adjusting the timing with the loading in the proposed method is analyzed based on losses, and a controller is designed to realize the load-dependent operation. A lossless RCD current sensing method is used to sense the output inductor current value in the proposed load-dependent operation. In conclusion, experimental efficiency of a hardware prototype is provided to show that the proposed method can increase the converter's efficiency in both heavy- and light-load conditions.« less

Load-Dependent Soft-Switching Method of Half-Bridge Current Doubler for High-Voltage Point-of-Load Converter in Data Center Power Supplies

DOE PAGES

Cui, Yutian; Yang, Fei; Tolbert, Leon M.; ...

2016-06-14

With the increased cloud computing and digital information storage, the energy requirement of data centers keeps increasing. A high-voltage point of load (HV POL) with an input series output parallel structure is proposed to convert 400 to 1 VDC within a single stage to increase the power conversion efficiency. The symmetrical controlled half-bridge current doubler is selected as the converter topology in the HV POL. A load-dependent soft-switching method has been proposed with an auxiliary circuit that includes inductor, diode, and MOSFETs so that the hard-switching issue of typical symmetrical controlled half-bridge converters is resolved. The operation principles of themore » proposed soft-switching half-bridge current doubler have been analyzed in detail. Then, the necessity of adjusting the timing with the loading in the proposed method is analyzed based on losses, and a controller is designed to realize the load-dependent operation. A lossless RCD current sensing method is used to sense the output inductor current value in the proposed load-dependent operation. In conclusion, experimental efficiency of a hardware prototype is provided to show that the proposed method can increase the converter's efficiency in both heavy- and light-load conditions.« less

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

PubMed

Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

2010-05-14

This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm(-2) for a large electrode (an area of approximately 60 000 microm(2)). However, the local current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser.

PubMed

Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Ng, Geok Ing; Zhang, Yu; Xu, Yingqiang; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang

2018-04-02

A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 μm is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at ~18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mode locking regimes, the Q-switched RF signal and mode locked RF signal coexist, and the Q-switched lasing and mode-locked lasing happen at different wavelengths. This is the first observation of these three pulsed working regimes in a GaSb-based diode laser. An analysis of the regime switching mechanism is given based on the interplay between the gain saturation and the saturable absorption.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

High precision triangular waveform generator

DOEpatents

Mueller, Theodore R.

1983-01-01

An ultra-linear ramp generator having separately programmable ascending and descending ramp rates and voltages is provided. Two constant current sources provide the ramp through an integrator. Switching of the current at current source inputs rather than at the integrator input eliminates switching transients and contributes to the waveform precision. The triangular waveforms produced by the waveform generator are characterized by accurate reproduction and low drift over periods of several hours. The ascending and descending slopes are independently selectable.

High-precision triangular-waveform generator

DOEpatents

Mueller, T.R.

1981-11-14

An ultra-linear ramp generator having separately programmable ascending and decending ramp rates and voltages is provided. Two constant current sources provide the ramp through an integrator. Switching of the current at current source inputs rather than at the integrator input eliminates switching transients and contributes to the waveform precision. The triangular waveforms produced by the waveform generator are characterized by accurate reproduction and low drift over periods of several hours. The ascending and descending slopes are independently selectable.

A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

PubMed

Yan Lu; Wing-Hung Ki

2014-06-01

A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

Modality and Task Switching Interactions using Bi-Modal and Bivalent Stimuli

ERIC Educational Resources Information Center

Sandhu, Rajwant; Dyson, Benjamin J.

2013-01-01

Investigations of concurrent task and modality switching effects have to date been studied under conditions of uni-modal stimulus presentation. As such, it is difficult to directly compare resultant task and modality switching effects, as the stimuli afford both tasks on each trial, but only one modality. The current study investigated task and…

Packet Switching Networks: An Introduction with Some Attention to Selected Vendors.

ERIC Educational Resources Information Center

Sanchez, James Joseph

The purpose of this paper is to provide an overview of the history, development, and services of the packet switching network services that currently exist in the United States. The character of packet switching, a computerized method of transmitting data, is used as the basis for tracing the development of the industry itself. Contending that the…

Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akyol, Mustafa; Department of Physics, University of Çukurova, Adana 01330; Yu, Guoqiang

2015-04-20

We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeBmore » layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (−14.12 Oe/10{sup 7} A cm{sup −2}) was found to be almost 13× larger than that in Hf|CoFeB|TaO{sub x} (−1.05 Oe/10{sup 7} A cm{sup −2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting  H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.« less

Potential antimicrobial agents from triazole-functionalized 2H-benzo[b][1,4]oxazin-3(4H)-ones.

PubMed

Bollu, Rajitha; Banu, Saleha; Bantu, Rajashaker; Reddy, A Gopi; Nagarapu, Lingaiah; Sirisha, K; Kumar, C Ganesh; Gunda, Shravan Kumar; Shaik, Kamal

2017-12-01

A series of substituted triazole functionalized 2H-benzo[b][1,4]oxazin-3(4H)-ones were synthesized by employing click chemistry and further characterized based on 1 H NMR, 13 C NMR, IR and mass spectral studies. All the synthesized derivatives were screened for their in vitro antimicrobial activities. Further, molecular docking studies were accomplished to explore the binding interactions between 1,2,3-triazol-4-yl-2H-benzo[b][1,4]oxazin-3(4H)-one and the active site of Staphylococcus aureus (CrtM) dehydrosqualene synthase (PDB ID: 2ZCS). These docking studies revealed that the synthesized derivatives showed high binding energies and strong H-bond interactions with the dehydrosqualene synthase validating the observed antimicrobial activity data. Based on antimicrobial activity and docking studies, the compounds 9c, 9d and 9e were identified as promising antimicrobial leads. Copyright © 2017 Elsevier Ltd. All rights reserved.

Emerging memories: resistive switching mechanisms and current status

NASA Astrophysics Data System (ADS)

Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong

2012-07-01

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO2, Cr2O3, FeOx and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO3, Pb(Zrx Ti1-x)O3, BiFeO3 and PrxCa1-xMnO3 (iii) large band gap high-k dielectrics, e.g. Al2O3 and Gd2O3; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In2Se3 and In2Te3. Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

Electrode erosion properties of gas spark switches for fast linear transformer drivers

NASA Astrophysics Data System (ADS)

Li, Xiaoang; Pei, Zhehao; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

2017-12-01

Fast linear transformer drivers (FLTDs) are a popular and potential route for high-power devices employing multiple "bricks" in series and parallel, but they put extremely stringent demands on gas switches. Electrode erosion of FLTD gas switches is a restrictive and unavoidable factor that degrades performance and limits stability. In this paper, we systematically investigated the electrode erosion characteristics of a three-electrode field distortion gas switch under the typical working conditions of FLTD switches, and the discharge current was 7-46 kA with 46-300 ns rise time. A high speed frame camera and a spectrograph were used to capture the expansion process and the spectral emission of the spark channel was used to estimate the current density and the spark temperature, and then the energy fluxes and the external forces on the electrode surface were calculated. A tens of kilo-ampere nanosecond pulse could generate a 1011 W/m2 energy flux injection and 1.3-3.5 MPa external pressure on the electrode surface, resulting in a millimeter-sized erosion crater with the maximum peak height Rz reaching 100 μm magnitude. According to the morphological images by a laser scanning confocal microscope, the erosion crater of a FLTD switch contained three kinds of local morphologies, namely a center boiling region, an overflow region and a sputtering region. In addition, the crater size, the surface roughness, and the mass loss were highly dependent on the current amplitude and the transferred charge. We also observed Morphology Type I and Type II, respectively, with different pulse parameters, which had an obvious influence on surface roughness and mass loss. Finally, the quantitative relationship between the electrode mass loss and the pulse parameter was clarified. The transferred charge and the current amplitude were proved to be the main factors determining the electrode mass loss of a FLTD switch, and a least squares fitting expression for mass loss was also obtained.

Rapid mapping of polarization switching through complete information acquisition

DOE PAGES

Somnath, Suhas; Belianinov, Alex; Kalinin, Sergei V.; ...

2016-12-02

Polarization switching in ferroelectric and multiferroic materials underpins a broad range of current and emergent applications, ranging from random access memories to field-effect transistors, and tunnelling devices. Switching in these materials is exquisitely sensitive to local defects and microstructure on the nanometre scale, necessitating spatially resolved high-resolution studies of these phenomena. Classical piezoresponse force microscopy and spectroscopy, although providing necessary spatial resolution, are fundamentally limited in data acquisition rates and energy resolution. This limitation stems from their two-tiered measurement protocol that combines slow (~1 s) switching and fast (~10 kHz–1 MHz) detection waveforms. Here we develop an approach for rapidmore » probing of ferroelectric switching using direct strain detection of material response to probe bias. This approach, facilitated by high-sensitivity electronics and adaptive filtering, enables spectroscopic imaging at a rate 3,504 times faster the current state of the art, achieving high-veracity imaging of polarization dynamics in complex microstructures.« less

Rapid mapping of polarization switching through complete information acquisition

PubMed Central

Somnath, Suhas; Belianinov, Alex; Kalinin, Sergei V.; Jesse, Stephen

2016-01-01

Polarization switching in ferroelectric and multiferroic materials underpins a broad range of current and emergent applications, ranging from random access memories to field-effect transistors, and tunnelling devices. Switching in these materials is exquisitely sensitive to local defects and microstructure on the nanometre scale, necessitating spatially resolved high-resolution studies of these phenomena. Classical piezoresponse force microscopy and spectroscopy, although providing necessary spatial resolution, are fundamentally limited in data acquisition rates and energy resolution. This limitation stems from their two-tiered measurement protocol that combines slow (∼1 s) switching and fast (∼10 kHz–1 MHz) detection waveforms. Here we develop an approach for rapid probing of ferroelectric switching using direct strain detection of material response to probe bias. This approach, facilitated by high-sensitivity electronics and adaptive filtering, enables spectroscopic imaging at a rate 3,504 times faster the current state of the art, achieving high-veracity imaging of polarization dynamics in complex microstructures. PMID:27910941

Modelling switching-time effects in high-frequency power conditioning networks

NASA Technical Reports Server (NTRS)

Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

1979-01-01

Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

Note: Cryogenic heat switch with stepper motor actuator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melcher, B. S., E-mail: bsmelche@syr.edu; Timbie, P. T., E-mail: pttimbie@wisc.edu

2015-12-15

A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an “on state” thermal conductance of 5.04 mW/K and no conductance in the “off state.” The switch is optimized for cycling an adiabatic demagnetization refrigerator.

High-voltage, low-inductance gas switch

DOEpatents

Gruner, Frederick R.; Stygar, William A.

2016-03-22

A low-inductance, air-insulated gas switch uses a de-enhanced annular trigger ring disposed between two opposing high voltage electrodes. The switch is DC chargeable to 200 kilovolts or more, triggerable, has low jitter (5 ns or less), has pre-fire and no-fire rates of no more than one in 10,000 shots, and has a lifetime of greater than 100,000 shots. Importantly, the switch also has a low inductance (less than 60 nH) and the ability to conduct currents with less than 100 ns rise times. The switch can be used with linear transformer drives or other pulsed-power systems.

GAS DISCHARGE SWITCH EVALUATION FOR RHIC BEAM ABORT KICKER APPLICATION.

DOE Office of Scientific and Technical Information (OSTI.GOV)

ZHANG,W.; SANDBERG,J.; SHELDRAKE,R.

2002-06-30

A gas discharge switch EEV HX3002 is being evaluated at Brookhaven National Laboratory as a possible candidate of RHIC Beam Abort Kicker modulator main switch. At higher beam energy and higher beam intensity, the switch stability becomes very crucial. The hollow anode thyratron used in the existing system is not rated for long reverse current conduction. The reverse voltage arcing caused thyratron hold-off voltage de-rating has been the main limitation of the system operation. To improve the system reliability, a new type of gas discharge switch has been suggested by Marconi Applied Technology for its reverse conducting capability.

Analytical design equations for self-tuned Class-E power amplifier.

PubMed

Hu, Zhe; Troyk, Philip

2011-01-01

For many emerging neural prosthesis designs that are powered by inductive coupling, their small physical size requires large current in the extracorporeal transmitter coil, and the Class-E power amplifier topology is often used for the transmitter design. Tuning of Class-E circuits for efficient operation is difficult and a self-tuned circuit can facilitate the tuning. The coil current is sensed and used to tune the switching of the transistor switch in the Class-E circuit in order to maintain its high-efficiency operation. Although mathematically complex, the analysis and design procedure for the self-tuned Class-E circuit can be simplified due to the current feedback control, which makes the phase angle between the switching pulse and the coil current predetermined. In this paper explicit analytical design equations are derived and a detailed design procedure is presented and compared with the conventional Class-E design approaches.

Design and Development of a Series Switch for High Voltage in RF Heating

NASA Astrophysics Data System (ADS)

Patel, Himanshu K.; Shah, Deep; Thacker, Mauli; Shah, Atman

2013-02-01

Plasma is the fourth state of matter. To sustain plasma in its ionic form very high temperature is essential. RF heating systems are used to provide the required temperature. Arching phenomenon in these systems can cause enormous damage to the RF tube. Heavy current flows across the anode-cathode junction, which need to be suppressed in minimal time for its protection. Fast-switching circuit breakers are used to cut-off the load from the supply in cases of arching. The crowbar interrupts the connection between the high voltage power supply (HVPS) and the RF tube for a temporary period between which the series switch has to open. The crowbar shunts the current across the load but in the process leads to short circuiting the HVPS. Thus, to protect the load as well as the HVPS a series switch is necessary. This paper presents the design and development of high voltage Series Switch for the high power switching applications. Fiber optic based Optimum triggering scheme is designed and tested to restrict the time delay well within the stipulated limits. The design is well supported with the experimental results for the whole set-up along with the series switch at various voltage level before its approval for operation at 5.2 kV.

Analysis of optical route in a micro high-speed magneto-optic switch

NASA Astrophysics Data System (ADS)

Weng, Zihua; Yang, Guoguang; Huang, Yuanqing; Chen, Zhimin; Zhu, Yun; Wu, Jinming; Lin, Shufen; Mo, Weiping

2005-02-01

A novel micro high-speed 2x2 magneto-optic switch and its optical route, which is used in high-speed all-optical communication network, is designed and analyzed in this paper. The study of micro high-speed magneto-optic switch mainly involves the optical route and high-speed control technique design. The optical route design covers optical route design of polarization in optical switch, the performance analysis and material selection of magneto-optic crystal and magnetic path design in Faraday rotator. The research of high-speed control technique involves the study of nanosecond pulse generator, high-speed magnetic field and its control technique etc. High-speed current transients from nanosecond pulse generator are used to switch the magnetization of the magneto-optic crystal, which propagates a 1550nm optical beam. The optical route design schemes and electronic circuits of high-speed control technique are both simulated on computer and test by the experiments respectively. The experiment results state that the nanosecond pulse generator can output the pulse with rising edge time 3~35ns, voltage amplitude 10~90V and pulse width 10~100ns. Under the control of CPU singlechip, the optical beam can be stably switched and the switching time is less than 1μs currently.

Enhancement of macroscopic quantum tunneling in the higher-order phase switches of Bi2212 intrinsic Josephson junctions

NASA Astrophysics Data System (ADS)

Kitano, Haruhisa; Yamaguchi, Ayami; Takahashi, Yusaku; Umegai, Shunpei; Watabe, Yuji; Ohnuma, Haruka; Hosaka, Kazutaka; Kakehi, Daiki

2018-03-01

The macroscopic quantum tunneling (MQT) in the current-biased intrinsic Josephson junctions (IJJs) of high-T c cuprates has attracted much attention for decades. Although the MQT for the phase switches from the zero to the first voltage state (1st SW) in the multiple-branched I-V curves is well explained by the conventional theory, the occurrence of MQT for the higher order switches such as the switch from the 1st to 2nd voltage state (2nd SW) has been still debated. Here, we present an experimental study on the phase switches of small IJJs fabricated from underdoped Bi2Sr2(Ca,Y)Cu2Oy. We observed the single photon transition between quantized energy levels in the 3rd phase switches at 59.15 GHz and 2 K. The comparison with the previous studies on the nearly optimal-doped Bi2Sr2CaCu2Oy clearly suggests a possibility that the MQT rate for the higher-order phase switches is commonly enhanced by the effective suppression of the energy barrier for the higher-order phase escape due to the phase-running state after the 1st SW, in spite of the large difference in a critical current density and T c.

Research on multi-switch synchronization based on single trigger generator

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Cheng, Xinbing; Yang, Jianhua; Yang, Xiao; Chen, Rong

2018-05-01

Multi-switch synchronous operation is an effective approach to provide high-voltage high-current for a high-power device. In this paper, we present a synchronization system with a corona stabilized triggered switch (CSTS) as main switch and an all-solid modularized quasi-square pulse forming system. In addition, this paper provides explanations of low jitter and accurate triggering of CSTS based on streamer theory. Different switches of the module are triggered by an electrical pulse created by a trigger generator, a quasi-square pulse can be created on the load. The experimental results show that it is able to switch voltages in excess of 40kV with nanosecond system jitter for three-module synchronous operation.

Improved Thermal-Switch Disks Protect Batteries

NASA Technical Reports Server (NTRS)

Darcy, Eric; Bragg, Bobby

1990-01-01

Improved thermal-switch disks help protect electrical batteries against high currents like those due to short circuits or high demands for power in circuits supplied by batteries. Protects batteries against excessive temperatures. Centered by insulating fiberglass washer. Contains conductive polymer that undergoes abrupt increase in electrical resistance when excessive current raises its temperature above specific point. After cooling, polymer reverts to low resistance. Disks reusable.

Plasma density evolution in plasma opening switch obtained by a time-resolved sensitive He-Ne interferometer

NASA Astrophysics Data System (ADS)

Chen, Lin; Ren, Jing; Guo, Fan; Zhou, LiangJi; Li, Ye; He, An; Jiang, Wei

2014-03-01

To understand the formation process of vacuum gap in coaxial microsecond conduction time plasma opening switch (POS), we have made measurements of the line-integrated plasma density during switch operation using a time-resolved sensitive He-Ne interferometer. The conduction current and conduction time in experiments are about 120 kA and 1 μs, respectively. As a result, more than 85% of conduction current has been transferred to an inductive load with rise time of 130 ns. The radial dependence of the density is measured by changing the radial location of the line-of-sight for shots with the same nominal POS parameters. During the conduction phase, the line-integrated plasma density in POS increases at all radial locations over the gun-only case by further ionization of material injected from the guns. The current conduction is observed to cause a radial redistribution of the switch plasma. A vacuum gap forms rapidly in the plasma at 5.5 mm from the center conductor, which is consistent with the location where magnetic pressure is the largest, allowing current to be transferred from the POS to the load.

Automatic Locker Key With Barcode Based Microcontroller Atmega 8535

NASA Astrophysics Data System (ADS)

Fahmi, M. Irfan; Efendi Hutagalung, Jhonson

2017-12-01

MCB (miniature circuit breaker) is an electromagnetic device that embodies complete enclosure in a molded insulating material. The main function of an MCB is to switch the circuit, i.e., to open the circuit (which has been connected to it) automatically when the current passing through it (MCB) exceeds the value for which it is set. Unlike fuse, an MCB can be easily reset and thus offers improved operational safety and greater convenience without incurring large operating cost.The principal of operation is simple. In simple terms MCB is a switch which automatically turns off when the current flowing through it passes the maximum allowable limit. Generally MCB are designed to protect against over current and over temperature faults (over heating). Sometimes the overload the current through the bimetal causes to raise the temperature of it. The heat generated within the bimetal itself enough to cause deflection due to thermal expansion of metals. This solution is used by LDR, and LM 35 as the sencor to control center. Therefore it is very important because it is related about local control switches, isolating switches against faults and overload protection devices for installations or specific equipments or appliances

Using of explosive technologies for development of a compact current-limiting device for operation on 110 kV class systems

NASA Astrophysics Data System (ADS)

Shurupov, A. V.; Shurupov, M. A.; Kozlov, A. A.; Kotov, A. V.

2016-11-01

This paper considers the possibility of creating on new physical principles a highspeed current-limiting device (CLD) for the networks with voltage of 110 kV, namely, on the basis of the explosive switching elements. The device is designed to limit the steady short-circuit current to acceptable values for the time does not exceed 3 ms at electric power facilities. The paper presents an analysis of the electrical circuit of CLD. The main features of the scheme are: a new high-speed switching element with high regenerating voltage; fusible switching element that enables to limit the overvoltage after sudden breakage of network of the explosive switch; non-inductive resistor with a high heat capacity and a special reactor with operating time less than 1 s. We analyzed the work of the CLD with help of special software PSPICE, which is based on the equivalent circuit of single-phase short circuit to ground in 110 kV network. Analysis of the equivalent circuit operation CLD shows its efficiency and determines the CLD as a perspective direction of the current-limiting devices of new generation.

Atomically Thin Femtojoule Memristive Device

DOE PAGES

Zhao, Huan; Dong, Zhipeng; Tian, He; ...

2017-10-25

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary-type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. In this paper, the formation of conductive filaments in a material medium with sub-nanometer thickness formed through the oxidation of atomically thin two-dimensionalmore » boron nitride is studied. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. Finally, these ultralow energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.« less

Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

NASA Astrophysics Data System (ADS)

Tian, Liqiang; Shi, Wei; Feng, Qingqing

2011-11-01

A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

Adaptation of superconducting fault current limiter to high-speed reclosing

NASA Astrophysics Data System (ADS)

Koyama, T.; Yanabu, S.

2009-10-01

Using a high temperature superconductor, we constructed and tested a model superconducting fault current limiter (SFCL). The superconductor might break in some cases because of its excessive generation of heat. Therefore, it is desirable to interrupt early the current that flows to superconductor. So, we proposed the SFCL using an electromagnetic repulsion switch which is composed of a superconductor, a vacuum interrupter and a by-pass coil, and its structure is simple. Duration that the current flow in the superconductor can be easily minimized to the level of less than 0.5 cycle using this equipment. On the other hand, the fault current is also easily limited by large reactance of the parallel coil. There is duty of high-speed reclosing after interrupting fault current in the electric power system. After the fault current is interrupted, the back-up breaker is re-closed within 350 ms. So, the electromagnetic repulsion switch should return to former state and the superconductor should be recovered to superconducting state before high-speed reclosing. Then, we proposed the SFCL using an electromagnetic repulsion switch which employs our new reclosing function. We also studied recovery time of the superconductor, because superconductor should be recovered to superconducting state within 350 ms. In this paper, the recovery time characteristics of the superconducting wire were investigated. Also, we combined the superconductor with the electromagnetic repulsion switch, and we did performance test. As a result, a high-speed reclosing within 350 ms was proven to be possible.

Magnetic thin-film split-domain current sensor-recorder

DOEpatents

Hsieh, Edmund J.

1979-01-01

A sensor-recorder for recording a representation of the direction and peak amplitude of a transient current. A magnetic thin film is coated on a glass substrate under the influence of a magnetic field so that the finished film is magnetically uniaxial and anisotropic. The film is split into two oppositely magnetized contiguous domains with a central boundary by subjecting adjacent portions of the film simultaneously to magnetic fields that are opposed 180.degree.. With the split-domain sensor-recorder placed with the film plane and domain boundary either perpendicular or parallel to the expected conductive path of a transient current, the occurrence of the transient causes switching of a portion of one domain to the direction of the other domain. The amount of the switched domain portion is indicative of the amplitude of the peak current of the transient, while the particular domain that is switched is indicative of the direction of the current. The resulting domain patterns may be read with a passive magnetic tape viewer.

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

NASA Astrophysics Data System (ADS)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Magnetization switching in ferromagnets by adsorbed chiral molecules without current or external magnetic field.

PubMed

Ben Dor, Oren; Yochelis, Shira; Radko, Anna; Vankayala, Kiran; Capua, Eyal; Capua, Amir; Yang, See-Hun; Baczewski, Lech Tomasz; Parkin, Stuart Stephen Papworth; Naaman, Ron; Paltiel, Yossi

2017-02-23

Ferromagnets are commonly magnetized by either external magnetic fields or spin polarized currents. The manipulation of magnetization by spin-current occurs through the spin-transfer-torque effect, which is applied, for example, in modern magnetoresistive random access memory. However, the current density required for the spin-transfer torque is of the order of 1 × 10 6  A·cm -2 , or about 1 × 10 25 electrons s -1 cm -2 . This relatively high current density significantly affects the devices' structure and performance. Here we demonstrate magnetization switching of ferromagnetic thin layers that is induced solely by adsorption of chiral molecules. In this case, about 10 13 electrons per cm 2 are sufficient to induce magnetization reversal. The direction of the magnetization depends on the handedness of the adsorbed chiral molecules. Local magnetization switching is achieved by adsorbing a chiral self-assembled molecular monolayer on a gold-coated ferromagnetic layer with perpendicular magnetic anisotropy. These results present a simple low-power magnetization mechanism when operating at ambient conditions.

Magnetization switching in ferromagnets by adsorbed chiral molecules without current or external magnetic field

PubMed Central

Ben Dor, Oren; Yochelis, Shira; Radko, Anna; Vankayala, Kiran; Capua, Eyal; Capua, Amir; Yang, See-Hun; Baczewski, Lech Tomasz; Parkin, Stuart Stephen Papworth; Naaman, Ron; Paltiel, Yossi

2017-01-01

Ferromagnets are commonly magnetized by either external magnetic fields or spin polarized currents. The manipulation of magnetization by spin-current occurs through the spin-transfer-torque effect, which is applied, for example, in modern magnetoresistive random access memory. However, the current density required for the spin-transfer torque is of the order of 1 × 106 A·cm−2, or about 1 × 1025 electrons s−1 cm−2. This relatively high current density significantly affects the devices' structure and performance. Here we demonstrate magnetization switching of ferromagnetic thin layers that is induced solely by adsorption of chiral molecules. In this case, about 1013 electrons per cm2 are sufficient to induce magnetization reversal. The direction of the magnetization depends on the handedness of the adsorbed chiral molecules. Local magnetization switching is achieved by adsorbing a chiral self-assembled molecular monolayer on a gold-coated ferromagnetic layer with perpendicular magnetic anisotropy. These results present a simple low-power magnetization mechanism when operating at ambient conditions. PMID:28230054

Simple Multiplexing Hand-Held Control Unit

NASA Technical Reports Server (NTRS)

Hannaford, Blake

1989-01-01

Multiplexer consists of series of resistors, each shunted by single-pole, single-throw switch. User operates switches by pressing buttons or squeezing triggers. Prototype includes three switches operated successfully in over 200 hours of system operations. Number of switches accommodated determined by signal-to-noise ratio of current source, noise induced in control unit and cable, and number of bits in output of analog-to-digital converter. Because many computer-contolled robots have extra analog-to-digital channels, such multiplexer added at little extra cost.

High-speed and low-energy nitride memristors

DOE PAGES

Choi, Byung Joon; Torrezan, Antonio C.; Strachan, John Paul; ...

2016-05-24

High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. Here, the motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

Restrike Particle Beam Experiments on a Dense Plasma Focus. Opening Switch Research on a Dense Plasma Focus.

DTIC Science & Technology

1985-06-01

Research on this grant has focused on plasma focus experiments in the areas of particle beam generation and as a potential repetitive opening switch...as were scaling laws for the increase of electron energy and current with input energy. The potential of the plasma focus as an opening switch was...delay line technique. The observed frequencies were most consistent with the lower hybrid frequency. Keywords include: Dense Plasma Focus , Particle Beam Generation, Opening Switch, Load Experiments, Pulsed Power.

Driver circuit for solid state light sources

DOEpatents

Palmer, Fred; Denvir, Kerry; Allen, Steven

2016-02-16

A driver circuit for a light source including one or more solid state light sources, a luminaire including the same, and a method of so driving the solid state light sources are provided. The driver circuit includes a rectifier circuit that receives an alternating current (AC) input voltage and provides a rectified AC voltage. The driver circuit also includes a switching converter circuit coupled to the light source. The switching converter circuit provides a direct current (DC) output to the light source in response to the rectified AC voltage. The driver circuit also includes a mixing circuit, coupled to the light source, to switch current through at least one solid state light source of the light source in response to each of a plurality of consecutive half-waves of the rectified AC voltage.

Method and apparatus for low power analog-to-digital conversion

DOEpatents

De Geronimo, Gianluigi; Nambiar, Neena

2013-10-01

A method and apparatus for analog-to-digital conversion. An Analog-to-Digital Converter (ADC) includes M ADC.sub.j, j=1, 2, . . . , M. Each ADC.sub.j comprises a number of cells each of which comprises a first switch, a second switch, a current sink and an inverter. An inverter of a cell in an ADC.sub.j changes state in response to a current associate with an input signal of the ADC.sub.j exceeding a threshold, thus switching on the next cell. Each ADC.sub.j is enabled to perform analog-to-digital conversion on a residual current of a previous ADC.sub.j-1 after the previous ADC.sub.j-1 has completed its analog-to-digital conversion and has been disabled.

Switching-type regulator circuit has increased efficiency

NASA Technical Reports Server (NTRS)

Clapp, W. M.

1967-01-01

Switching series regulator circuit uses an inductive network to feed most of the current applied to the control circuit to the load. This circuit eliminates resistive losses and the need for heat sinks.

Power-MOSFET Voltage Regulator

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

NASA Astrophysics Data System (ADS)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions.

PubMed

Klehr, A; Wenzel, H; Brox, O; Schwertfeger, S; Staske, R; Erbert, G

2013-02-11

We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at a wavelength of 1064 nm. Gain-switching is achieved by injecting nearly rectangular shaped current pulses having a length of 50 ns and a very high amplitude up to 2.5 A. The repetition frequency is 200 kHz. The laser has a ridge waveguide (RW) for lateral waveguiding with a ridge width of 3 µm and a cavity length of 1.5 mm. Time resolved investigations show, depending on the amplitude of the current pulses, that the optical power exhibits different types of oscillatory behavior during the pulses, accompanied by changes in the lateral near field intensity profiles and optical spectra. Three different types of instabilities can be distinguished: mode beating with frequencies between 25 GHz and 30 GHz, switching between different lateral intensity profiles with a frequency of 0.4 GHz and self-sustained oscillations with a frequency of 4 GHz. The investigations are of great relevance for the utilization of gain-switched DFB-RW lasers as seed lasers for fiber laser systems and in other applications, which require a high optical power.

Superconducting Switch for Fast On-Chip Routing of Quantum Microwave Fields

NASA Astrophysics Data System (ADS)

Pechal, M.; Besse, J.-C.; Mondal, M.; Oppliger, M.; Gasparinetti, S.; Wallraff, A.

2016-08-01

A switch capable of routing microwave signals at cryogenic temperatures is a desirable component for state-of-the-art experiments in many fields of applied physics, including but not limited to quantum-information processing, communication, and basic research in engineered quantum systems. Conventional mechanical switches provide low insertion loss but disturb operation of dilution cryostats and the associated experiments by heat dissipation. Switches based on semiconductors or microelectromechanical systems have a lower thermal budget but are not readily integrated with current superconducting circuits. Here we design and test an on-chip switch built by combining tunable transmission-line resonators with microwave beam splitters. The device is superconducting and as such dissipates a negligible amount of heat. It is compatible with current superconducting circuit fabrication techniques, operates with a bandwidth exceeding 100 MHz, is capable of handling photon fluxes on the order of 1 05 μ s-1 , equivalent to powers exceeding -90 dBm , and can be switched within approximately 6-8 ns. We successfully demonstrate operation of the device in the quantum regime by integrating it on a chip with a single-photon source and using it to route nonclassical itinerant microwave fields at the single-photon level.

A high-current rail-type gas switch with preionization by an additional corona discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, andmore » the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.« less

Conceptual design of a high-speed electromagnetic switch for a modified flux-coupling-type SFCL and its application in renewable energy system.

PubMed

Chen, Lei; Chen, Hongkun; Yang, Jun; Shu, Zhengyu; He, Huiwen; Shu, Xin

2016-01-01

The modified flux-coupling-type superconducting fault current (SFCL) is a high-efficient electrical auxiliary device, whose basic function is to suppress the short-circuit current by controlling the magnetic path through a high-speed switch. In this paper, the high-speed switch is based on electromagnetic repulsion mechanism, and its conceptual design is carried out to promote the application of the modified SFCL. Regarding that the switch which is consisting of a mobile copper disc, two fixed opening and closing coils, the computational method for the electromagnetic force is discussed, and also the dynamic mathematical model including circuit equation, magnetic field equation as well as mechanical motion equation is theoretically deduced. According to the mathematical modeling and calculation of characteristic parameters, a feasible design scheme is presented, and the high-speed switch's response time can be less than 0.5 ms. For that the modified SFCL is equipped with this high-speed switch, the SFCL's application in a 10 kV micro-grid system with multiple renewable energy sources are assessed in the MATLAB software. The simulations are well able to affirm the SFCL's performance behaviors.

The extent of cigarette brand and company switching: results from the Adult Use-of-Tobacco Survey.

PubMed

Siegel, M; Nelson, D E; Peddicord, J P; Merritt, R K; Giovino, G A; Eriksen, M P

1996-01-01

To evaluate the effects of cigarette advertising on brand switching, an accurate estimate of the extent of cigarette brand and company switching among current smokers is needed. Data from the 1986 Adult Use-of-Tobacco Survey were analyzed to estimate the percentage of adult smokers who switched cigarette brands and companies in the previous year. Approximately 9.2% of adult smokers (4.2 million) switched cigarette brands in 1986, and 6.7% (3.1 million) switched cigarette companies. The aggregate profitability of brand switching in 1986 was approximately $362 million. Based on this analysis, brand switching alone justifies only a small percentage of a cigarette company's advertising and promotion expenditures, suggesting that future research should address other potential effects of advertising, including maintenance of brand loyalty and expanding the cigarette market. Medical Subject Headings (MeSH): addictive behavior, advertising, smoking, tobacco.

An energy-consistent fracture model for ferroelectrics

NASA Astrophysics Data System (ADS)

Miao, Hongchen; Li, Faxin

2017-02-01

The fracture behavior of ferroelectrics has been intensively studied in recent decades, though currently a widely accepted fracture mechanism is still lacking. In this work, enlightened by previous experimental observations that crack propagation in ferroelectrics is always accompanied by domain switching, we propose a micromechanical model in which both crack propagation and domain switching are controlled by energy-based criteria. Both electric energy and mechanical energy can induce domain switching, while only mechanical energy can drive crack propagation. Furthermore, constrained domain switching is considered in this model, leading to the gradient domain switching zone near the crack tip. Analysis results show that stress-induced ferroelastic switching always has a toughening effect as the mechanical energy release rate serves as the driving force for both fracture and domain switching. In comparison, the electric-field-induced switching may have either a toughening or detoughening effect. The proposed model can qualitatively agree with the existing experimental results.

Real-World Switching to Riociguat: Management and Practicalities in Patients with PAH and CTEPH.

PubMed

Gall, Henning; Vachiéry, Jean-Luc; Tanabe, Nobuhiro; Halank, Michael; Orozco-Levi, Mauricio; Mielniczuk, Lisa; Chang, MiKyung; Vogtländer, Kai; Grünig, Ekkehard

2018-06-01

A proportion of patients with pulmonary arterial hypertension (PAH) and chronic thromboembolic pulmonary hypertension (CTEPH) do not achieve treatment goals or experience side effects on their current therapy. In such cases, switching patients to a new drug while discontinuing the first may be a viable and appropriate treatment option. CAPTURE was designed to investigate how physicians manage the switching of patients to riociguat in real-world clinical practice. Observations from the study were used to assess whether recommendations in the riociguat prescribing information are reflected in clinical practice. CAPTURE was an international, multicenter, uncontrolled, retrospective chart review that collected data from patients with PAH or inoperable or persistent/recurrent CTEPH who switched to riociguat from another pulmonary hypertension (PH)-targeted medical therapy. The primary objective of the study was to understand the procedure undertaken in real-world clinical practice for patients switching to riociguat. Of 127 patients screened, 125 were enrolled in CAPTURE. The majority of patients switched from a phosphodiesterase type 5 inhibitor (PDE5i) to riociguat and the most common reason for switching was lack of efficacy. Physicians were already using the recommended treatment-free period when switching patients to riociguat from sildenafil, but a slightly longer period than recommended for tadalafil. In line with the contraindication, the majority of patients did not receive riociguat and PDE5i therapy concomitantly. Physicians also followed the recommended dose-adjustment procedure for riociguat. Switching to riociguat from another PH-targeted therapy may be feasible in real-world clinical practice in the context of the current recommendations.

Systems and methods for reducing transient voltage spikes in matrix converters

DOEpatents

Kajouke, Lateef A.; Perisic, Milun; Ransom, Ray M.

2013-06-11

Systems and methods are provided for delivering energy using an energy conversion module that includes one or more switching elements. An exemplary electrical system comprises a DC interface, an AC interface, an isolation module, a first conversion module between the DC interface and the isolation module, and a second conversion module between the AC interface and the isolation module. A control module is configured to operate the first conversion module to provide an injection current to the second conversion module to reduce a magnitude of a current through a switching element of the second conversion module before opening the switching element.

Explosive-driven, high speed, arcless switch

DOEpatents

Skogmo, P.J.; Tucker, T.J.

1987-07-14

An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed. 7 figs.

Linear beam raster magnet driver based on H-bridge technique

DOEpatents

Sinkine, Nikolai I.; Yan, Chen; Apeldoorn, Cornelis; Dail, Jeffrey Glenn; Wojcik, Randolph Frank; Gunning, William

2006-06-06

An improved raster magnet driver for a linear particle beam is based on an H-bridge technique. Four branches of power HEXFETs form a two-by-two switch. Switching the HEXFETs in a predetermined order and at the right frequency produces a triangular current waveform. An H-bridge controller controls switching sequence and timing. The magnetic field of the coil follows the shape of the waveform and thus steers the beam using a triangular rather than a sinusoidal waveform. The system produces a raster pattern having a highly uniform raster density distribution, eliminates target heating from non-uniform raster density distributions, and produces higher levels of beam current.

Analysis of the threshold switching mechanism of a Te-SbO selector device for crosspoint nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Kim, Young Seok; Park, Ji Woon; Lee, Jong Ho; Choi, In Ah; Heo, Jaeyeong; Kim, Hyeong Joon

2017-10-01

The threshold switching mechanism of Te-SbO thin films with a unique microstructure in which a Te nanocluster is present in the SbO matrix is analyzed. During the electro-forming process, amorphous Te filaments are formed in the Te nanocluster. However, unlike conventional Ovonic threshold switching (TS) selector devices, it has been demonstrated that the off-current flows along the filament. Numerical calculations show that the off-current is due to the trap present in the filament. We also observed changes in TS parameters through controls in the strength or volume of the filaments.

A Double-Pole High Voltage High Current Switch

DTIC Science & Technology

2005-12-01

NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS Approved for public release; distribution is unlimited A DOUBLE- POLE HIGH...December 2005 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE: A Double- Pole High Voltage High Current Switch 6. AUTHOR(S...to divert heavy charged particles, e.g. Cu+. 15. NUMBER OF PAGES 68 14. SUBJECT TERMS Double- Pole , Pulse Forming Inductive Network, PFIN

Fault tolerant onboard packet switch architecture for communication satellites: Shared memory per beam approach

NASA Technical Reports Server (NTRS)

Shalkhauser, Mary JO; Quintana, Jorge A.; Soni, Nitin J.

1994-01-01

The NASA Lewis Research Center is developing a multichannel communication signal processing satellite (MCSPS) system which will provide low data rate, direct to user, commercial communications services. The focus of current space segment developments is a flexible, high-throughput, fault tolerant onboard information switching processor. This information switching processor (ISP) is a destination-directed packet switch which performs both space and time switching to route user information among numerous user ground terminals. Through both industry study contracts and in-house investigations, several packet switching architectures were examined. A contention-free approach, the shared memory per beam architecture, was selected for implementation. The shared memory per beam architecture, fault tolerance insertion, implementation, and demonstration plans are described.

PWM Switching Frequency Effects on Eddy Current Sensors for Magnetically Suspended Flywheel Systems

NASA Technical Reports Server (NTRS)

Jansen, Ralph; Lebron, Ramon; Dever, Timothy P.; Birchenough, Arthur G.

2003-01-01

A flywheel magnetic bearing (MB) pulse width modulated power amplifier (PWM) configuration is selected to minimize noise generated by the PWMs in the flywheel position sensor system. Two types of noise are addressed: beat frequency noise caused by variations in PWM switching frequencies, and demodulation noise caused by demodulation of high order harmonics of the switching voltage into the MB control band. Beat frequency noise is eliminated by synchronizing the PWM switch frequencies, and demodulation noise is minimized by selection of a switching frequency which does not have harmonics at the carrier frequency of the sensor. The recommended MB PWM system has five synchronized PWMs switching at a non-integer harmonic of the sensor carrier.

Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

DOEpatents

Turner, Steven Richard

2006-12-26

A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

Electrical Conductance Tuning and Bistable Switching in Poly(N-vinylcarbazole)-Carbon Nanotube Composite Films.

PubMed

Liu, Gang; Ling, Qi-Dan; Teo, Eric Yeow Hwee; Zhu, Chun-Xiang; Chan, D Siu-Hung; Neoh, Koon-Gee; Kang, En-Tang

2009-07-28

By varying the carbon nanotube (CNT) content in poly(N-vinylcarbazole) (PVK) composite thin films, the electrical conductance behavior of an indium-tin oxide/PVK-CNT/aluminum (ITO/PVK-CNT/Al) sandwich structure can be tuned in a controlled manner. Distinctly different electrical conductance behaviors, such as (i) insulator behavior, (ii) bistable electrical conductance switching effects (write-once read-many-times (WORM) memory effect and rewritable memory effect), and (iii) conductor behavior, are discernible from the current density-voltage characteristics of the composite films. The turn-on voltage of the two bistable conductance switching devices decreases and the ON/OFF state current ratio of the WORM device increases with the increase in CNT content of the composite film. Both the WORM and rewritable devices are stable under a constant voltage stress or a continuous pulse voltage stress, with an ON/OFF state current ratio in excess of 10(3). The conductance switching effects of the composite films have been attributed to electron trapping in the CNTs of the electron-donating/hole-transporting PVK matrix.

On the role of verbalization during task set selection: switching or serial order control?

PubMed

Bryck, Richard L; Mayr, Ulrich

2005-06-01

Recent task-switching work in which paper-and-pencil administered single-task lists were compared with task-alternation lists has demonstrated large increases in task-switch costs with concurrent articulatory suppression (AS), implicating a crucial role for verbalization during switching (Baddeley, Chincotta, & Adlam, 2001; Emerson & Miyake, 2003). Experiment 1 replicated this result, using computerized assessment, albeit with much smaller effect sizes than in the original reports. In Experiment 2, AS interference was reduced when a sequential cue (spatial location) that indicated the current position in the sequence of task alternations was given. Finally, in Experiment 3, switch trials and no-switch trials were compared within a block of alternating runs of two tasks. Again, AS interference was obtained mainly when the endogenous sequencing demand was high, and it was comparable for no-switch and switch trials. These results suggest that verbalization may be critical for endogenous maintenance and updating of a sequential plan, rather than exclusively for the actual switching process.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching.

PubMed

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-08

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (10 5 ) with better endurance (∼2000 cycles) and longer data retention (10 4 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Time-dependent quantum transport and power-law decay of the transient current in a nano-relay and nano-oscillator

NASA Astrophysics Data System (ADS)

Cuansing, Eduardo C.; Liang, Gengchiau

2011-10-01

Time-dependent nonequilibrium Green's functions are used to study electron transport properties in a device consisting of two linear chain leads and a time-dependent interlead coupling that is switched on non-adiabatically. We derive a numerically exact expression for the particle current and examine its characteristics as it evolves in time from the transient regime to the long-time steady-state regime. We find that just after switch-on, the current initially overshoots the expected long-time steady-state value, oscillates and decays as a power law, and eventually settles to a steady-state value consistent with the value calculated using the Landauer formula. The power-law parameters depend on the values of the applied bias voltage, the strength of the couplings, and the speed of the switch-on. In particular, the oscillating transient current decays away longer for lower bias voltages. Furthermore, the power-law decay nature of the current suggests an equivalent series resistor-inductor-capacitor circuit wherein all of the components have time-dependent properties. Such dynamical resistive, inductive, and capacitive influences are generic in nano-circuits where dynamical switches are incorporated. We also examine the characteristics of the dynamical current in a nano-oscillator modeled by introducing a sinusoidally modulated interlead coupling between the two leads. We find that the current does not strictly follow the sinusoidal form of the coupling. In particular, the maximum current does not occur during times when the leads are exactly aligned. Instead, the times when the maximum current occurs depend on the values of the bias potential, nearest-neighbor coupling, and the interlead coupling.

Voltage controlled current source

DOEpatents

Casne, Gregory M.

1992-01-01

A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cubukcu, Murat; Boulle, Olivier; Drouard, Marc

2014-01-27

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memorymore » cell.« less

Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.

PubMed

Li, Mi; Zhuge, Fei; Zhu, Xiaojian; Yin, Kuibo; Wang, Jinzhi; Liu, Yiwei; He, Congli; Chen, Bin; Li, Run-Wei

2010-10-22

The resistive switching (RS) characteristics of a Bi(0.95)La(0.05)FeO(3) (La-BFO) film sandwiched between a Pt bottom electrode and top electrodes (TEs) made of Al, Ag, Cu, and Au have been studied. Devices with TEs made of Ag and Cu showed stable bipolar RS behaviors, whereas those with TEs made of Al and Au exhibited unstable bipolar RS. The Ag/La-BFO/Pt structure showed an on/off ratio of 10(2), a retention time > 10(5) s, and programming voltages < 1 V. The RS effect can be attributed to the formation/rupture of nanoscale metal filaments due to the diffusion of the TEs under a bias voltage. The maximum current before the reset process (on-to-off switching) was found to increase linearly with the current compliance applied during the set process (off-to-on switching).

Performance analysis of microcomputer based differential protection of UHV lines under selective phase switching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhatti, A.A.

1990-04-01

This paper examines the effects of primary and secondary fault quantities as well s of mutual couplings of neighboring circuits on the sensitivity of operation and threshold settings of a microcomputer based differential protection of UHV lines under selective phase switching. Microcomputer based selective phase switching allows the disconnection of minimum number of phases involved in a fault and requires the autoreclosing of these phases immediately after the extinction of secondary arc. During a primary fault a heavy current contribution to the healthy phases tends to cause an unwanted tripping. Faulty phases physically disconnected constitute an isolated fault which beingmore » coupled to the system affects the current and voltage levels of the healthy phases still retained in the system and may cause an unwanted tripping. The microcomputer based differential protection, appears to have poor performance when applied to uncompensated lines employing selective pole switching.« less

SiC MOSFET Switching Power Amplifier Project Summary

NASA Astrophysics Data System (ADS)

Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Slobodov, Ilia; Henson, Alex

2017-10-01

Eagle Harbor Technologies has completed a Phase I/II program to develop SiC MOSFET based Switching Power Amplifiers (SPA) for precision magnet control in fusion science applications. During this program, EHT developed several units have been delivered to the Helicity Injected Torus (HIT) experiment at the University of Washington to drive both the voltage and flux circuits of the helicity injectors. These units are capable of switching 700 V at 100 kHz with an adjustable duty cycle from 10 - 90% and a combined total output current of 96 kA for 4 ms (at max current). The SPAs switching is controlled by the microcontroller at HIT, which adjusts the duty cycle to maintain a specific waveform in the injector. The SPAs include overcurrent and shoot-through protection circuity. EHT will present an overview of the program including final results for the SPA waveforms. With support of DOE SBIR.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeloiza, Eddy C.; Burgos, Rolando P.

A step-down AC/AC converter for use in an electric distribution system includes at least one chopper circuit for each one of a plurality of phases of the AC power, each chopper circuit including a four-quadrant switch coupled in series between primary and secondary sides of the chopper circuit and a current-bidirectional two-quadrant switch coupled between the secondary side of the chopper circuit and a common node. Each current-bidirectional two-quadrant switch is oriented in the same direction, with respect to the secondary side of the corresponding chopper circuit and the common node. The converter further includes a control circuit configured tomore » pulse-width-modulate control inputs of the switches, to convert a first multiphase AC voltage at the primary sides of the chopper circuits to a second multiphase AC voltage at the secondary sides of the chopper circuits, the second multiphase AC voltage being lower in voltage than the first multiphase AC voltage.« less

DIODE STEERED MANGETIC-CORE MEMORY

DOEpatents

Melmed, A.S.; Shevlin, R.T.; Laupheimer, R.

1962-09-18

A word-arranged magnetic-core memory is designed for use in a digital computer utilizing the reverse or back current property of the semi-conductor diodes to restore the information in the memory after read-out. In order to ob tain a read-out signal from a magnetic core storage unit, it is necessary to change the states of some of the magnetic cores. In order to retain the information in the memory after read-out it is then necessary to provide a means to return the switched cores to their states before read-out. A rewrite driver passes a pulse back through each row of cores in which some switching has taken place. This pulse combines with the reverse current pulses of diodes for each column in which a core is switched during read-out to cause the particular cores to be switched back into their states prior to read-out. (AEC)

Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

NASA Astrophysics Data System (ADS)

Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

2016-12-01

Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

Contact material optimization and contact physics in metal-contact microelectromechanical systems (MEMS) switches

NASA Astrophysics Data System (ADS)

Yang, Zhenyin

Metal-contact MEMS switches hold great promise for implementing agile radio frequency (RF) systems because of their small size, low fabrication cost, low power consumption, wide operational band, excellent isolation and exceptionally low signal insertion loss. Gold is often utilized as a contact material for metal-contact MEMS switches due to its excellent electrical conductivity and corrosion resistance. However contact wear and stiction are the two major failure modes for these switches due to its material softness and high surface adhesion energy. To strengthen the contact material, pure gold was alloyed with other metal elements. We designed and constructed a new micro-contacting test facility that closely mimic the typical MEMS operation and utilized this facility to efficiently evaluate optimized contact materials. Au-Ni binary alloy system as the candidate contact material for MEMS switches was systematically investigated. A correlation between contact material properties (etc. microstructure, micro-hardness, electrical resistivity, topology, surface structures and composition) and micro-contacting performance was established. It was demonstrated nano-scale graded two-phase Au-Ni film could possibly yield an improved device performance. Gold micro-contact degradation mechanisms were also systematically investigated by running the MEMS switching tests under a wide range of test conditions. According to our quantitative failure analysis, field evaporation could be the dominant failure mode for highfield (> critical threshold field) hot switching; transient thermal-assisted wear could be the dominant failure mode for low-field hot switching; on the other hand, pure mechanical wear and steady current heating (1 mA) caused much less contact degradation in cold switching tests. Results from low-force (50 muN/micro-contact), low current (0.1 mA) tests on real MEMS switches indicated that continuous adsorbed films from ambient air could degrade the switch contact resistance. Our work also contributes to the field of general nano-science and technology by resolving the transfer directionality of field evaporation of gold in atomic force microscope (AFM)/scanning tunneling microscope (STM).

Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films.

PubMed

Hu, Weijin; Wang, Zhihong; Du, Yuanmin; Zhang, Xi-Xiang; Wu, Tom

2014-11-12

We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2010-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2011-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Low power consumption resistance random access memory with Pt/InOx/TiN structure

NASA Astrophysics Data System (ADS)

Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn

2013-09-01

In this study, the resistance switching characteristics of a resistive random access memory device with Pt/InOx/TiN structure is investigated. Unstable bipolar switching behavior is observed during the initial switching cycle, which then stabilizes after several switching cycles. Analyses indicate that the current conduction mechanism in the resistance state is dominated by Ohmic conduction. The decrease in electrical conductance can be attributed to the reduction of the cross-sectional area of the conduction path. Furthermore, the device exhibits low operation voltage and power consumption.

A Superconducting Switch for Insertion Devices with Variable Period Length

NASA Astrophysics Data System (ADS)

Holubek, T.; Baumbach, T.; Casalbuoni, S.; Gerstl, S.; Grau, A.; Hagelstein, M.; Jauregui, D. Saez de; Boffo, C.; Walter, W.

Superconducting insertion devices (IDs) are very attractive for synchrotron light sources since they offer the possibility to enhance the tuning range and functionality significantly by period length switching. Period length switching can be realized by reversing the current in a separately powered subset of the superconducting windings.So far, the first demonstration mock-up coil allowing period length tripling was fabricated and tested successfully. Here, we report on the feasibility of superconducting switches built to operate in a liquid helium bath and under conduction cooled conditions.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Aoki, Ichiro (Inventor); Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor)

2013-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2008-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Validation of bending tests by nanoindentation for micro-contact analysis of MEMS switches

NASA Astrophysics Data System (ADS)

Broue, Adrien; Fourcade, Thibaut; Dhennin, Jérémie; Courtade, Frédéric; Charvet, Pierre–Louis; Pons, Patrick; Lafontan, Xavier; Plana, Robert

2010-08-01

Research on contact characterization for microelectromechanical system (MEMS) switches has been driven by the necessity to reach a high-reliability level for micro-switch applications. One of the main failures observed during cycling of the devices is the increase of the electrical contact resistance. The key issue is the electromechanical behaviour of the materials used at the contact interface where the current flows through. Metal contact switches have a large and complex set of failure mechanisms according to the current level. This paper demonstrates the validity of a new methodology using a commercial nanoindenter coupled with electrical measurements on test vehicles specially designed to investigate the micro-scale contact physics. Dedicated validation tests and modelling are performed to assess the introduced methodology by analyzing the gold contact interface with 5 µm2 square bumps at various current levels. Contact temperature rise is measured, which affects the mechanical properties of the contact materials and modifies the contact topology. In addition, the data provide a better understanding of micro-contact behaviour related to the impact of current at low- to medium-power levels. This article was originally submitted for the special section 'Selected papers from the 20th Micromechanics Europe Workshop (MME 09) (Toulouse, France, 20-22 September 2009)', Journal of Micromechanics and Microengineering, volume 20, issue 6.

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures

NASA Astrophysics Data System (ADS)

Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo; Lee, Seung Ryul; Chang, Man; Hur, Ji Hyun; Kim, Young-Bae; Kim, Chang-Jung; Seo, David H.; Seo, Sunae; Chung, U.-In; Yoo, In-Kyeong; Kim, Kinam

2011-08-01

Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaOx-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 1012. Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

DOE PAGES

Ji, Shiqi; Zheng, Sheng; Wang, Fei; ...

2017-07-06

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control

NASA Astrophysics Data System (ADS)

Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian

2016-10-01

Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Shiqi; Zheng, Sheng; Wang, Fei

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

Conductive atomic force microscopy study of the photoexcitation effect on resistive switching in ZrO2(Y) films with Au nanoparticles

NASA Astrophysics Data System (ADS)

Novikov, A. S.; Filatov, D. O.; Antonov, D. A.; Antonov, I. N.; Shenina, M. E.; Gorshkov, O. N.

2018-03-01

We report on the experimental observation of the effect of optical excitation on resistive switching in ultrathin ZrO2(Y) films with single-layered arrays of Au nanoparticles. The samples were prepared by depositing nanometer-thick Au films sandwiched between two ZrO2(Y) layers by magnetron sputtering followed by annealing. Resistive switching was studied by conductive atomic force microscopy by measuring cyclic current-voltage curves of a probe-to-sample contact. The contact area was illuminated by radiation of a semiconductor laser diode with the wavelength corresponding to the plasmon resonance in an Au nanoparticle array. The enhancement of the hysteresis in cyclic current-voltage curves due to bipolar resistive switching under illumination was observed. The effect was attributed to heating of Au nanoparticles due to plasmonic optical absorption and a plasmon resonance, which enhances internal photoemission of electrons from the Fermi level in Au nanoparticles into the conduction band of ZrO2(Y). Both factors promote resistive switching in a ZrO2(Y) matrix.

Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

2018-01-01

To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

Energy Switching Threshold for Climatic Benefits

NASA Astrophysics Data System (ADS)

Zhang, X.; Cao, L.; Caldeira, K.

2013-12-01

Climate change is one of the great challenges facing humanity currently and in the future. Its most severe impacts may still be avoided if efforts are made to transform current energy systems (1). A transition from the global system of high Greenhouse Gas (GHG) emission electricity generation to low GHG emission energy technologies is required to mitigate climate change (2). Natural gas is increasingly seen as a choice for transitions to renewable sources. However, recent researches in energy and climate puzzled about the climate implications of relying more energy on natural gas. On one hand, a shift to natural gas is promoted as climate mitigation because it has lower carbon per unit energy than coal (3). On the other hand, the effect of switching to natural gas on nuclear-power and other renewable energies development may offset benefits from fuel-switching (4). Cheap natural gas is causing both coal plants and nuclear plants to close in the US. The objective of this study is to measure and evaluate the threshold of energy switching for climatic benefits. We hypothesized that the threshold ratio of energy switching for climatic benefits is related to GHGs emission factors of energy technologies, but the relation is not linear. A model was developed to study the fuel switching threshold for greenhouse gas emission reduction, and transition from coal and nuclear electricity generation to natural gas electricity generation was analyzed as a case study. The results showed that: (i) the threshold ratio of multi-energy switching for climatic benefits changes with GHGs emission factors of energy technologies. (ii)The mathematical relation between the threshold ratio of energy switching and GHGs emission factors of energies is a curved surface function. (iii) The analysis of energy switching threshold for climatic benefits can be used for energy and climate policy decision support.

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

NASA Technical Reports Server (NTRS)

Petrick, David J. (Inventor)

2017-01-01

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

PubMed

Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

2013-03-25

n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

Get Current: Switch on Clean Energy Activity Book

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2014-06-01

Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme.

Physics Notes.

ERIC Educational Resources Information Center

School Science Review, 1983

1983-01-01

Presented are physics experiments, laboratory procedures, demonstrations, and classroom materials/activities. Experiments include: speed of sound in carbon dioxide; inverse square law; superluminal velocities; and others. Equipment includes: current switch; electronic switch; and pinhole camera. Discussion of mechanics of walking is also included.…

Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akyol, Mustafa; Jiang, Wanjun; Yu, Guoqiang

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf broken vertical bar CoFeB broken vertical bar MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thicknessmore » is increased above similar to 7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.« less

Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akyol, Mustafa; Department of Physics, University of Çukurova, Adana 01330; Jiang, Wanjun

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might bemore » a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.« less

Analysis of series resonant converter with series-parallel connection

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren; Huang, Chien-Lan

2011-02-01

In this study, a parallel inductor-inductor-capacitor (LLC) resonant converter series-connected on the primary side and parallel-connected on the secondary side is presented for server power supply systems. Based on series resonant behaviour, the power metal-oxide-semiconductor field-effect transistors are turned on at zero voltage switching and the rectifier diodes are turned off at zero current switching. Thus, the switching losses on the power semiconductors are reduced. In the proposed converter, the primary windings of the two LLC converters are connected in series. Thus, the two converters have the same primary currents to ensure that they can supply the balance load current. On the output side, two LLC converters are connected in parallel to share the load current and to reduce the current stress on the secondary windings and the rectifier diodes. In this article, the principle of operation, steady-state analysis and design considerations of the proposed converter are provided and discussed. Experiments with a laboratory prototype with a 24 V/21 A output for server power supply were performed to verify the effectiveness of the proposed converter.

Switch failure diagnosis based on inductor current observation for boost converters

NASA Astrophysics Data System (ADS)

Jamshidpour, E.; Poure, P.; Saadate, S.

2016-09-01

Face to the growing number of applications using DC-DC power converters, the improvement of their reliability is subject to an increasing number of studies. Especially in safety critical applications, designing fault-tolerant converters is becoming mandatory. In this paper, a switch fault-tolerant DC-DC converter is studied. First, some of the fastest Fault Detection Algorithms (FDAs) are recalled. Then, a fast switch FDA is proposed which can detect both types of failures; open circuit fault as well as short circuit fault can be detected in less than one switching period. Second, a fault-tolerant converter which can be reconfigured under those types of fault is introduced. Hardware-In-the-Loop (HIL) results and experimental validations are given to verify the validity of the proposed switch fault-tolerant approach in the case of a single switch DC-DC boost converter with one redundant switch.

Cost-effectiveness of cervical cancer screening with primary human papillomavirus testing in Norway.

PubMed

Burger, E A; Ortendahl, J D; Sy, S; Kristiansen, I S; Kim, J J

2012-04-24

New screening technologies and vaccination against human papillomavirus (HPV), the necessary cause of cervical cancer, may impact optimal approaches to prevent cervical cancer. We evaluated the cost-effectiveness of alternative screening strategies to inform cervical cancer prevention guidelines in Norway. We leveraged the primary epidemiologic and economic data from Norway to contextualise a simulation model of HPV-induced cervical cancer. The current cytology-only screening was compared with strategies involving cytology at younger ages and primary HPV-based screening at older ages (31/34+ years), an option being actively deliberated by the Norwegian government. We varied the switch-age, screening interval, and triage strategies for women with HPV-positive results. Uncertainty was evaluated in sensitivity analysis. Current cytology-only screening was less effective and more costly than strategies that involve switching to primary HPV testing in older ages. For unvaccinated women, switching at age 34 years to primary HPV testing every 4 years was optimal given the Norwegian cost-effectiveness threshold ($83,000 per year of life saved). For vaccinated women, a 6-year screening interval was cost-effective. When we considered a wider range of strategies, we found that an earlier switch to HPV testing (at age 31 years) may be preferred. Strategies involving a switch to HPV testing for primary screening in older women is expected to be cost-effective compared with current recommendations in Norway.

Anatomy of filamentary threshold switching in amorphous niobium oxide.

PubMed

Li, Shuai; Liu, Xinjun; Nandi, Sanjoy Kumar; Elliman, Robert Glen

2018-06-25

The threshold switching behaviour of Pt/NbOx/TiN devices is investigated as a function device area and NbOx film thickness and shown to reveal important insight into the structure of the self-assembled switching region. The devices exhibit combined selector-memory (1S1R) behavior after an initial voltage-controlled forming process, but exhibit symmetric threshold switching when the RESET and SET currents are kept below a critical value. In this mode, the threshold and hold voltages are independent of the device area and film thickness but the threshold current (power), while independent of device area, decreases with increasing film thickness. These results are shown to be consistent with a structure in which the threshold switching volume is confined, both laterally and vertically, to the region between the residual memory filament and the TiN electrode, and where the memory filament has a core-shell structure comprising a metallic core and a semiconducting shell. The veracity of this structure is demonstrated by comparing experimental results with the predictions of a simple circuit model, and more detailed finite element simulations. These results provide further insight into the structure and operation of NbOx threshold switching devices that have application in emerging memory and neuromorphic computing fields. © 2018 IOP Publishing Ltd.

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

PubMed Central

Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Kim, Tae-Hyeon; Kim, Yoon; Park, Byung-Gook

2017-01-01

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm−3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode. PMID:28772819

Low pressure spark gap triggered by an ion diode

DOEpatents

Prono, Daniel S.

1985-01-01

Spark gap apparatus for use as an electric switch operating at high voltage, high current and high repetition rate. Mounted inside a housing are an anode, cathode and ion plate. An ionizable fluid is pumped through the chamber of the housing. A pulse of current to the ion plate causes ions to be emitted by the ion plate, which ions move into and ionize the fluid. Electric current supplied to the anode discharges through the ionized fluid and flows to the cathode. Current stops flowing when the current source has been drained. The ionized fluid recombines into its initial dielectric ionizable state. The switch is now open and ready for another cycle.

Low-pressure spark gap triggered by an ion diode

DOEpatents

Prono, D.S.

1982-08-31

Spark gap apparatus for use as an electric switch operating at high voltage, high current and high repetition rate. Mounted inside a housing are an anode, cathode and ion plate. An ionizable fluid is pumped through the chamber of the housing. A pulse of current to the ion plate causes ions to be emitted by the ion plate, which ions move into and ionize the fluid. Electric current supplied to the anode discharges through the ionized fluid and flows to the cathode. Current stops flowing when the current source has been drained. The ionized fluid recombines into its initial dielectric ionizable state. The switch is now open and ready for another cycle.

Multistage switching hardware and software implementations for student experiment purpose

NASA Astrophysics Data System (ADS)

Sani, A.; Suherman

2018-02-01

Current communication and internet networks are underpinned by the switching technologies that interconnect one network to the others. Students’ understanding on networks rely on how they conver the theories. However, understanding theories without touching the reality may exert spots in the overall knowledge. This paper reports the progress of the multistage switching design and implementation for student laboratory activities. The hardware and software designs are based on three stages clos switching architecture with modular 2x2 switches, controlled by an arduino microcontroller. The designed modules can also be extended for batcher and bayan switch, and working on circuit and packet switching systems. The circuit analysis and simulation show that the blocking probability for each switch combinations can be obtained by generating random or patterned traffics. The mathematic model and simulation analysis shows 16.4% blocking probability differences as the traffic generation is uniform. The circuits design components and interfacing solution have been identified to allow next step implementation.

Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity

NASA Astrophysics Data System (ADS)

Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Kim, Seon Yong; Park, In-Sung; Ahn, Jinho

2018-03-01

The anode interface effects on the resistive switching characteristics of Pt/HfO2/Pt resistors are investigated by changing the forming and switching polarity. Resistive switching properties are evaluated and compared with the polarity operation procedures, such as the reset voltage (Vr), set voltage (Vs), and current levels at low and high resistance states. When the same forming and switching voltage polarity are applied to the resistor, their switching parameters are widely distributed. However, the opposite forming and switching voltage polarity procedures enhance the uniformity of the switching parameters. In particular, the Vs distribution is strongly affected by the voltage polarity variation. A model is proposed based on cone-shaped filament formation through the insulator and the cone diameter at the anode interface to explain the improved resistive switching characteristics under opposite polarity operation. The filament cone is thinner near the anode interface during the forming process; hence, the anode is altered by the application of a switching voltage with opposite polarity to the forming voltage polarity and the converted anode interface becomes the thicker part of the cone. The more uniform and stable switching behavior is attributed to control over the formation and rupture of the cone-shaped filaments at their thicker parts.

Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hong-bo, E-mail: walkman67@163.com; Liu, Jin-liang

2014-04-15

In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid innermore » surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.« less

HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

DOEpatents

Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

1962-04-17

A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

A model predictive current control of flux-switching permanent magnet machines for torque ripple minimization

NASA Astrophysics Data System (ADS)

Huang, Wentao; Hua, Wei; Yu, Feng

2017-05-01

Due to high airgap flux density generated by magnets and the special double salient structure, the cogging torque of the flux-switching permanent magnet (FSPM) machine is considerable, which limits the further applications. Based on the model predictive current control (MPCC) and the compensation control theory, a compensating-current MPCC (CC-MPCC) scheme is proposed and implemented to counteract the dominated components in cogging torque of an existing three-phase 12/10 FSPM prototyped machine, and thus to alleviate the influence of the cogging torque and improve the smoothness of electromagnetic torque as well as speed, where a comprehensive cost function is designed to evaluate the switching states. The simulated results indicate that the proposed CC-MPCC scheme can suppress the torque ripple significantly and offer satisfactory dynamic performances by comparisons with the conventional MPCC strategy. Finally, experimental results validate both the theoretical and simulated predictions.

Adélie penguin foraging location predicted by tidal regime switching.

PubMed

Oliver, Matthew J; Irwin, Andrew; Moline, Mark A; Fraser, William; Patterson, Donna; Schofield, Oscar; Kohut, Josh

2013-01-01

Penguin foraging and breeding success depend on broad-scale environmental and local-scale hydrographic features of their habitat. We investigated the effect of local tidal currents on a population of Adélie penguins on Humble Is., Antarctica. We used satellite-tagged penguins, an autonomous underwater vehicle, and historical tidal records to model of penguin foraging locations over ten seasons. The bearing of tidal currents did not oscillate daily, but rather between diurnal and semidiurnal tidal regimes. Adélie penguins foraging locations changed in response to tidal regime switching, and not to daily tidal patterns. The hydrography and foraging patterns of Adélie penguins during these switching tidal regimes suggest that they are responding to changing prey availability, as they are concentrated and dispersed in nearby Palmer Deep by variable tidal forcing on weekly timescales, providing a link between local currents and the ecology of this predator.

Adélie Penguin Foraging Location Predicted by Tidal Regime Switching

PubMed Central

Oliver, Matthew J.; Irwin, Andrew; Moline, Mark A.; Fraser, William; Patterson, Donna; Schofield, Oscar; Kohut, Josh

2013-01-01

Penguin foraging and breeding success depend on broad-scale environmental and local-scale hydrographic features of their habitat. We investigated the effect of local tidal currents on a population of Adélie penguins on Humble Is., Antarctica. We used satellite-tagged penguins, an autonomous underwater vehicle, and historical tidal records to model of penguin foraging locations over ten seasons. The bearing of tidal currents did not oscillate daily, but rather between diurnal and semidiurnal tidal regimes. Adélie penguins foraging locations changed in response to tidal regime switching, and not to daily tidal patterns. The hydrography and foraging patterns of Adélie penguins during these switching tidal regimes suggest that they are responding to changing prey availability, as they are concentrated and dispersed in nearby Palmer Deep by variable tidal forcing on weekly timescales, providing a link between local currents and the ecology of this predator. PMID:23383091

Auxiliary quasi-resonant dc tank electrical power converter

DOEpatents

Peng, Fang Z.

2006-10-24

An auxiliary quasi-resonant dc tank (AQRDCT) power converter with fast current charging, voltage balancing (or charging), and voltage clamping circuits is provided for achieving soft-switched power conversion. The present invention is an improvement of the invention taught in U.S. Pat. No. 6,111,770, herein incorporated by reference. The present invention provides faster current charging to the resonant inductor, thus minimizing delay time of the pulse width modulation (PWM) due to the soft-switching process. The new AQRDCT converter includes three tank capacitors or power supplies to achieve the faster current charging and minimize the soft-switching time delay. The new AQRDCT converter further includes a voltage balancing circuit to charge and discharge the three tank capacitors so that additional isolated power supplies from the utility line are not needed. A voltage clamping circuit is also included for clamping voltage surge due to the reverse recovery of diodes.

Controlled parity switch of persistent currents in quantum ladders

NASA Astrophysics Data System (ADS)

Filippone, Michele; Bardyn, Charles-Edouard; Giamarchi, Thierry

2018-05-01

We investigate the behavior of persistent currents for a fixed number of noninteracting fermions in a periodic quantum ladder threaded by Aharonov-Bohm and transverse magnetic fluxes Φ and χ . We show that the coupling between ladder legs provides a way to effectively change the ground-state fermion-number parity, by varying χ . Specifically, we demonstrate that varying χ by 2 π (one flux quantum) leads to an apparent fermion-number parity switch. We find that persistent currents exhibit a robust 4 π periodicity as a function of χ , despite the fact that χ →χ +2 π leads to modifications of order 1 /N of the energy spectrum, where N is the number of sites in each ladder leg. We show that these parity-switch and 4 π periodicity effects are robust with respect to temperature and disorder, and outline potential physical realizations using cold atomic gases and photonic lattices, for bosonic analogs of the effects.

Analytical modeling of eddy-current losses caused by pulse-width-modulation switching in permanent-magnet brushless direct-current motors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, F.; Nehl, T.W.

1998-09-01

Because of their high efficiency and power density the PM brushless dc motor is a strong candidate for electric and hybrid vehicle propulsion systems. An analytical approach is developed to predict the inverter high frequency pulse width modulation (PWM) switching caused eddy-current losses in a permanent magnet brushless dc motor. The model uses polar coordinates to take curvature effects into account, and is also capable of including the space harmonic effect of the stator magnetic field and the stator lamination effect on the losses. The model was applied to an existing motor design and was verified with the finite elementmore » method. Good agreement was achieved between the two approaches. Hence, the model is expected to be very helpful in predicting PWM switching losses in permanent magnet machine design.« less

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

NASA Astrophysics Data System (ADS)

Singh, Subhash; Mohapatra, Y. N.

2017-06-01

We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

Self-consistent radiation-based simulation of electric arcs: II. Application to gas circuit breakers

NASA Astrophysics Data System (ADS)

Iordanidis, A. A.; Franck, C. M.

2008-07-01

An accurate and robust method for radiative heat transfer simulation for arc applications was presented in the previous paper (part I). In this paper a self-consistent mathematical model based on computational fluid dynamics and a rigorous radiative heat transfer model is described. The model is applied to simulate switching arcs in high voltage gas circuit breakers. The accuracy of the model is proven by comparison with experimental data for all arc modes. The ablation-controlled arc model is used to simulate high current PTFE arcs burning in cylindrical tubes. Model accuracy for the lower current arcs is evaluated using experimental data on the axially blown SF6 arc in steady state and arc resistance measurements close to current zero. The complete switching process with the arc going through all three phases is also simulated and compared with the experimental data from an industrial circuit breaker switching test.

Modeling of switching regulator power stages with and without zero-inductor-current dwell time

NASA Technical Reports Server (NTRS)

Lee, F. C. Y.; Yu, Y.

1979-01-01

State-space techniques are employed to derive accurate models for the three basic switching converter power stages: buck, boost, and buck/boost operating with and without zero-inductor-current dwell time. A generalized procedure is developed which treats the continuous-inductor-current mode without dwell time as a special case of the discontinuous-current mode when the dwell time vanishes. Abrupt changes of system behavior, including a reduction of the system order when the dwell time appears, are shown both analytically and experimentally. Merits resulting from the present modeling technique in comparison with existing modeling techniques are illustrated.

Cholinergic modulation of the CAN current may adjust neural dynamics for active memory maintenance, spatial navigation and time-compressed replay

PubMed Central

Yoshida, Motoharu; Knauer, Beate; Jochems, Arthur

2012-01-01

Suppression of cholinergic receptors and inactivation of the septum impair short-term memory, and disrupt place cell and grid cell activity in the medial temporal lobe (MTL). Location-dependent hippocampal place cell firing during active waking, when the acetylcholine level is high, switches to time-compressed replay activity during quiet waking and slow-wave-sleep (SWS), when the acetylcholine level is low. However, it remains largely unknown how acetylcholine supports short-term memory, spatial navigation, and the functional switch to replay mode in the MTL. In this paper, we focus on the role of the calcium-activated non-specific cationic (CAN) current which is activated by acetylcholine. The CAN current is known to underlie persistent firing, which could serve as a memory trace in many neurons in the MTL. Here, we review the CAN current and discuss possible roles of the CAN current in short-term memory and spatial navigation. We further propose a novel theoretical model where the CAN current switches the hippocampal place cell activity between real-time and time-compressed sequential activity during encoding and consolidation, respectively. PMID:22435051

14 CFR 23.1367 - Switches.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Switches. 23.1367 Section 23.1367 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... enough distance or insulating material between current carrying parts and the housing so that vibration...

14 CFR 23.1367 - Switches.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Switches. 23.1367 Section 23.1367 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... enough distance or insulating material between current carrying parts and the housing so that vibration...

14 CFR 23.1367 - Switches.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Switches. 23.1367 Section 23.1367 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... enough distance or insulating material between current carrying parts and the housing so that vibration...

14 CFR 23.1367 - Switches.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Switches. 23.1367 Section 23.1367 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... enough distance or insulating material between current carrying parts and the housing so that vibration...

14 CFR 23.1367 - Switches.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Switches. 23.1367 Section 23.1367 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... enough distance or insulating material between current carrying parts and the housing so that vibration...

Characteristics of silicon-based Sagnac optical switches using magneto-optical micro-ring array

NASA Astrophysics Data System (ADS)

Ni, Shuang; Wu, Baojian; Liu, Yawen

2018-01-01

The miniaturization and integration of optical switches are necessary for photonic switching networks and the utilization of magneto optical effects is a promising candidate. We propose a Sagnac optical switch chip based on the principle of nonreciprocal phase shift (NPS) of the magneto-optical (MO) micro-ring (MOMR) array, composed of SiO2/Si/Ce:YIG/SGGG. The MO switching function is realized by controlling the drive current in the snake-like metal microstrip circuit layered on the MOMRs. The transmission characteristics of the Sagnac MO switch chip dependent on magnetization intensity, waveguide coupling coefficient and waveguide loss are simulated. By optimizing the coupling coefficients, we design an MO switch using two serial MOMRs with a circumference of 38.37 μm, and the 3dB bandwidth and the extinction ratio are respectively up to 1.6 nm and 50dB for the waveguide loss coefficient of ?. And the switching magnetization can be further reduced by increasing the number of parallel MOMRs. The frequency response of the MO Sagnac switch is analyzed as well.

Software Defined Networking (SDN) controlled all optical switching networks with multi-dimensional switching architecture

NASA Astrophysics Data System (ADS)

Zhao, Yongli; Ji, Yuefeng; Zhang, Jie; Li, Hui; Xiong, Qianjin; Qiu, Shaofeng

2014-08-01

Ultrahigh throughout capacity requirement is challenging the current optical switching nodes with the fast development of data center networks. Pbit/s level all optical switching networks need to be deployed soon, which will cause the high complexity of node architecture. How to control the future network and node equipment together will become a new problem. An enhanced Software Defined Networking (eSDN) control architecture is proposed in the paper, which consists of Provider NOX (P-NOX) and Node NOX (N-NOX). With the cooperation of P-NOX and N-NOX, the flexible control of the entire network can be achieved. All optical switching network testbed has been experimentally demonstrated with efficient control of enhanced Software Defined Networking (eSDN). Pbit/s level all optical switching nodes in the testbed are implemented based on multi-dimensional switching architecture, i.e. multi-level and multi-planar. Due to the space and cost limitation, each optical switching node is only equipped with four input line boxes and four output line boxes respectively. Experimental results are given to verify the performance of our proposed control and switching architecture.

High-speed optical switch fabrics with large port count.

PubMed

Yeo, Yong-Kee; Xu, Zhaowen; Wang, Dawei; Liu, Jianguo; Wang, Yixin; Cheng, Tee-Hiang

2009-06-22

We report a novel architecture that can be used to construct optical switch fabrics with very high port count and nanoseconds switching speed. It is well known that optical switch fabrics with very fast switching time and high port count are challenging to realize. Currently, one of the most promising solutions is based on a combination of wavelength-tunable lasers and the arrayed waveguide grating router (AWGR). To scale up the number of ports in such switches, a direct method is to use AWGRs with a high channel count. However, such AWGRs introduce very large crosstalk noise due to the close wavelength channel spacing. In this paper, we propose an architecture for realizing a high-port count optical switch fabric using a combination of low-port count AWGRs, optical ON-OFF gates and WDM couplers. Using this new methodology, we constructed a proof-of concept experiment to demonstrate the feasibility of a 256 x 256 optical switch fabric. To our knowledge, this port count is the highest ever reported for switch fabrics of this type.

Kinetic factors determining conducting filament formation in solid polymer electrolyte based planar devices

NASA Astrophysics Data System (ADS)

Krishnan, Karthik; Aono, Masakazu; Tsuruoka, Tohru

2016-07-01

Resistive switching characteristics and conducting filament formation dynamics in solid polymer electrolyte (SPE) based planar-type atomic switches, with opposing active Ag and inert Pt electrodes, have been investigated by optimizing the device configuration and experimental parameters such as the gap distance between the electrodes, the salt inclusion in the polymer matrix, and the compliance current applied in current-voltage measurements. The high ionic conductivities of SPE enabled us to make scanning electron microscopy observations of the filament formation processes in the sub-micrometer to micrometer ranges. It was found that switching behaviour and filament growth morphology depend strongly on several kinetic factors, such as the redox reaction rate at the electrode-polymer interfaces, ion mobility in the polymer matrix, electric field strength, and the reduction sites for precipitation. Different filament formations, resulting from unidirectional and dendritic growth behaviours, can be controlled by tuning specified parameters, which in turn improves the stability and performance of SPE-based devices.Resistive switching characteristics and conducting filament formation dynamics in solid polymer electrolyte (SPE) based planar-type atomic switches, with opposing active Ag and inert Pt electrodes, have been investigated by optimizing the device configuration and experimental parameters such as the gap distance between the electrodes, the salt inclusion in the polymer matrix, and the compliance current applied in current-voltage measurements. The high ionic conductivities of SPE enabled us to make scanning electron microscopy observations of the filament formation processes in the sub-micrometer to micrometer ranges. It was found that switching behaviour and filament growth morphology depend strongly on several kinetic factors, such as the redox reaction rate at the electrode-polymer interfaces, ion mobility in the polymer matrix, electric field strength, and the reduction sites for precipitation. Different filament formations, resulting from unidirectional and dendritic growth behaviours, can be controlled by tuning specified parameters, which in turn improves the stability and performance of SPE-based devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00569a

High current, high bandwidth laser diode current driver

NASA Technical Reports Server (NTRS)

Copeland, David J.; Zimmerman, Robert K., Jr.

1991-01-01

A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

PubMed

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Performance of a 10 kV, 625 kA, 85 kJ energy discharge module utilizing a solid dielectric switch

NASA Astrophysics Data System (ADS)

Richardson, R. A.; Cravey, W. R.; Goerz, D. A.

We have designed and tested an 87-kJ energy discharge system consisting of two 720-(mu)F, 11-kV capacitors discharged through parallel coaxial cables into a 250 nH load. Data will be presented on the current and voltage waveforms, with calculated values of the system inductance and resistance. The bank uses a solid dielectric switch punctured by an explosive bridge wire (EBW) to initiate the discharge. With the capacitors charged to 9 kV, a 625-kA peak current is sent through the load with a ringing frequency of 6.8 kHz. The coaxial cables used to transmit the current to the load are 3 m in length. Both RG-217 and YK-198 cable types were tested, which have an inductance of 74 nH/ft and 35 nH/ft respectively. Normal operation requires that each cable carry 52 kA. The cables were tested to 100 kA each by connecting fewer cables to the load, and gradually increasing the charge voltage. The solid dielectric switch was chosen for high reliability. Details of the switch will be describes and data on its performance will be presented.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

The effect of working gas pressure on the switching rate of a kivotron

NASA Astrophysics Data System (ADS)

Bokhan, P. A.; Gugin, P. P.; Zakrevsky, D. E.; Lavrukhin, M. A.

2016-05-01

The switching rate in gas-discharge devices (kivotrons) based on an "open" discharge with counterpropagating electron beams is studied experimentally. Structures with a total cathode area of 2 cm2 were used. A monotonic reduction in the switching time with an increase in the working gas pressure and in the voltage amplitude at the time of breakdown is demonstrated. The minimum switching time is ~240 ps at a voltage of 17 kV. The maximum current rise rate, which is limited by the discharge circuit inductance, is 3 × 1012 A/s.

Passive Gas-Gap Heat Switches for Use in Low-Temperature Cryogenic Systems

NASA Technical Reports Server (NTRS)

Kimball, M. O.; Shirron, P. J.; Canavan, E. R.; Tuttle, J. G.; Jahromi, A. E.; Dipirro, M. J.; James, B. L.; Sampson, M. A.; Letmate, R. V.

2017-01-01

We present the current state of development in passive gas-gap heat switches. This type of switch does not require a separate heater to activate heat transfer but, instead, relies upon the warming of one end due to an intrinsic step in a thermodynamic cycle to raise a getter above a threshold temperature. Above this temperature sequestered gas is released to couple both sides of the switch. This enhances the thermodynamic efficiency of the system and reduces the complexity of the control system. Various gas mixtures and getter configurations will be presented.

Metal vapor arc switch electromagnetic accelerator technology

NASA Technical Reports Server (NTRS)

Mongeau, P. P.

1984-01-01

A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

Class E/F switching power amplifiers

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Aoki, Ichiro (Inventor); Rutledge, David B. (Inventor); Kee, Scott David (Inventor)

2004-01-01

The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

Quitting activity and tobacco brand Switching: findings from the ITC-4 Country Survey

PubMed Central

Cowie, Genevieve A.; Swift, Elena; Partos, Timea; Borland, Ron

2015-01-01

Objective Among Australian smokers, to examine associations between cigarette brand switching, quitting activity and possible causal directions by lagging the relationships in different directions. Methods Current smokers from nine waves (2002 to early 2012) of the ITC-4 Country Survey Australian dataset were surveyed. Measures were brand switching, both brand family and product type (roll-your-own versus factory-made cigarettes) reported in adjacent waves, interest in quitting, recent quit attempts, and one month sustained abstinence. Results Switching at one interval was unrelated to concurrent quit interest. Quit interest predicted switching at the following interval, but the effect disappeared once subsequent quit attempts were controlled for. Recent quit attempts more strongly predicted switching at concurrent (OR 1.34, 95% CI=1.18–1.52, p<0.001) and subsequent intervals (OR 1.31, 95% CI= 1.12–1.53, p=0.001) than switching predicted quit attempts, with greater asymmetry when both types of switching were combined. One month sustained abstinence and switching were unrelated in the same interval; however after controlling for concurrent switching and excluding type switchers, sustained abstinence predicted lower chance of switching at the following interval (OR=0.66, 95% CI=0.47–0.93, p=0.016). Conclusions The asymmetry suggests brand switching does not affect subsequent quitting. Implications Brand switching does not appear to interfere with quitting. PMID:25827182

Quitting activity and tobacco brand switching: findings from the ITC-4 Country Survey.

PubMed

Cowie, Genevieve A; Swift, Elena; Partos, Timea; Borland, Ron

2015-04-01

Among Australian smokers, to examine associations between cigarette brand switching, quitting activity and possible causal directions by lagging the relationships in different directions. Current smokers from nine waves (2002 to early 2012) of the ITC-4 Country Survey Australian dataset were surveyed. Measures were brand switching, both brand family and product type (roll-your-own versus factory-made cigarettes) reported in adjacent waves, interest in quitting, recent quit attempts, and one month sustained abstinence. Switching at one interval was unrelated to concurrent quit interest. Quit interest predicted switching at the following interval, but the effect disappeared once subsequent quit attempts were controlled for. Recent quit attempts more strongly predicted switching at concurrent (OR 1.34, 95%CI=1.18-1.52, p<0.001) and subsequent intervals (OR 1.31, 95%CI=1.12-1.53, p=0.001) than switching predicted quit attempts, with greater asymmetry when both types of switching were combined. One month sustained abstinence and switching were unrelated in the same interval; however, after controlling for concurrent switching and excluding type switchers, sustained abstinence predicted lower chance of switching at the following interval (OR=0.66, 95%CI=0.47-0.93, p=0.016). The asymmetry suggests brand switching does not affect subsequent quitting. Brand switching does not appear to interfere with quitting. © 2015 Public Health Association of Australia.

Micro-Ball-Lens Optical Switch Driven by SMA Actuator

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok

2003-01-01

The figure is a simplified cross section of a microscopic optical switch that was partially developed at the time of reporting the information for this article. In a fully developed version, light would be coupled from an input optical fiber to one of two side-by-side output optical fibers. The optical connection between the input and the selected output fiber would be made via a microscopic ball lens. Switching of the optical connection from one output fiber to another would be effected by using a pair of thin-film shape-memory-alloy (SMA) actuators to toggle the lens between two resting switch positions. There are many optical switches some made of macroscopic parts by conventional fabrication techniques and some that are microfabricated and, hence, belong to the class of microelectromechanical systems (MEMS). Conventionally fabricated optical switches tend to be expensive. MEMS switches can be mass-produced at relatively low cost, but their attractiveness has been diminished by the fact that, heretofore, MEMS switches have usually been found to exhibit high insertion losses. The present switch is intended to serve as a prototype of low-loss MEMS switches. In addition, this is the first reported SMA-based optical switch. The optical fibers would be held in V grooves in a silicon frame. The lens would have a diameter of 1 m; it would be held by, and positioned between, the SMA actuators, which would be made of thin films of TiNi alloy. Although the SMA actuators are depicted here as having simple shapes for the sake of clarity of illustration, the real actuators would have complex, partly net-like shapes. With the exception of the lens and the optical fibers, the SMA actuators and other components of the switch would be made by microfabrication techniques. The components would be assembled into a sandwich structure to complete the fabrication of the switch. To effect switching, an electric current would be passed through one of the SMA actuators to heat it above its transition temperature, thereby causing it to deform to a different "remembered" shape. The two SMA actuators would be stiff enough that once switching had taken place and the electrical current was turned off, the lens would remain latched in the most recently selected position. In a test, the partially developed switch exhibited an insertion loss of only -1.9 dB and a switching contrast of 70 dB. One the basis of prior research on SMA actuators and assuming a lens displacement of 125 m between extreme positions, it has been estimated that the fully developed switch would be capable of operating at a frequency as high as 10 Hz.

Low Pressure Spark Gap

DTIC Science & Technology

1981-06-01

voltage electrode and forms the interface between the water and vacuum. Figure 1 Low Pressure Switch Apparatus 380 The water Blumlein, the...buildup of current and can predict the rate constant within 30%, it appears that we understand the basic mechanism of the low pressure switch . 0.22...E. J. Lauer, "Status of Low Pressure Switch Research and Development," UCID 17998, Dec. 12, 1978. 4. E. J. Lauer, S. S. Yu and D. M. Cox, "Onset

The Design and Operation of a Slowfall AXCP (Air-Deployed Expendable Current Profiler).

DTIC Science & Technology

1988-05-01

Control Sensors pressure switch , P/N 607G6 .................................................... 13 Figure 8. Two-dimensional, free-body diagram of the...surface as well as a release mechanism. We then considered using an inexpensive pressure switch to trip the release mechanism. After a market survey...guillotine and pressure switch from the 250 to 300 psi pressure of seawater without resorting to a high precision 0-ring sealing system and pressure

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Wang, C. Y.

2017-09-01

Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.

Microwave switching power divider. [antenna feeds

NASA Technical Reports Server (NTRS)

Stockton, R. J.; Johnson, R. W. (Inventor)

1981-01-01

A pair of parallel, spaced-apart circular ground planes define a microwave cavity with multi-port microwave power distributing switching circuitry formed on opposite sides of a thin circular dielectric substrate disposed between the ground planes. The power distributing circuitry includes a conductive disk located at the center of the substrate and connected to a source of microwave energy. A high speed, low insertion loss switching diode and a dc blocking capacitor are connected in series between the outer end of a transmission line and an output port. A high impedance, microwave blocking dc bias choke is connected between each switching diode and a source of switching current. The switching source forward biases the diodes to couple microwave energy from the conductive disk to selected output ports and, to associated antenna elements connected to the output ports to form a synthesized antenna pattern.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Fiber Optic Handpiece Illumination Systems

DTIC Science & Technology

1989-01-01

only available from the manufacturer. Method of Light Activation Three systems are currently employed: 1. Handpiece Air Pressure Switch . The...Average Easy 3. Type of lamp (note brand and part #): 4. Method of light activation: Touch Air pressure Switch 5. Will it activate while the operator

Coaxial fast metal-to-metal switch for high current.

PubMed

Boissady, C; Rioux-Damidau, F

1978-11-01

A fast mechanical switch of coaxial configuration, driven by a magnetic field, is described. It presents a low inductance (6 nH), a low resistance (3 muOmega) and delay-times of 25 micros with a jitter of 0.08 micros.

Current-induced switching in a magnetic insulator

NASA Astrophysics Data System (ADS)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities.

PubMed

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-04-21

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 10(4) ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)(-1) just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

PubMed Central

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-01-01

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 104 ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)−1 just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling. PMID:27098051

Three-phase power factor controller with induced EMF sensing

NASA Technical Reports Server (NTRS)

Nola, F. J. (Inventor)

1984-01-01

A power factor controller for an ac induction motor is provided which is of the type comprising thyristor switches connected in series with the motor, phase detectors for sensing the motor current and voltage and providing an output proportional to the phase difference between the motor voltage and current, and a control circuit, responsive to the output of the phase detector and to a power factor command signal, for controlling switching of the thyristor. The invention involves sensing the induced emf produced by the motor during the time interval when the thyristor is off and for producing a corresponding feedback signal for controlling switching of the thyristor. The sensed emf is also used to enhance soft starting of the motor.

Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

NASA Astrophysics Data System (ADS)

Shi, Shengjie; Ou, Yongxi; Aradhya, S. V.; Ralph, D. C.; Buhrman, R. A.

2018-01-01

Future applications of spin-orbit torque will require new mechanisms to improve the efficiency of switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast nanosecond-scale performance with low-write-error rates. Here, we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin-memory loss by introducing subatomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a β -W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 ×106 A /cm2 .

Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Kyungmi; Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr; Department of Materials Science and Engineering, Korea University, Seoul 136-713

2015-08-07

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable formore » the optimization of STT-MRAM.« less

A zero-voltage-switched three-phase interleaved buck converter

NASA Astrophysics Data System (ADS)

Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

2018-04-01

This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

Multilevel DC link inverter

DOEpatents

Su, Gui-Jia

2003-06-10

A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

An Alternative to the Stay/Switch Equation Assessed When Using a Changeover-Delay

PubMed Central

MacDonall, James S.

2015-01-01

An alternative to the generalized matching equation for understanding concurrent performances is the stay/switch model. For the stay/switch model, the important events are the contingencies and behaviors at each alternative. The current experiment compares the descriptions by two stay/switch equations, the original, empirically derived stay/switch equation and a more theoretically derived equation based on ratios of stay to switch responses matching ratios of stay to switch reinforcers. The present experiment compared descriptions by the original stay/switch equation when using and not using a changeover delay. It also compared descriptions by the more theoretical equation with and without a changeover delay. Finally, it compared descriptions of the concurrent performances by these two equations. Rats were trained in 15 conditions on identical concurrent random-interval schedules in each component of a multiple schedule. A COD operated in only one component. There were no consistent differences in the variance accounted for by each equation of concurrent performances whether or not a COD was used. The simpler equation found greater sensitivity to stay than to switch reinforcers. It also found a COD eliminated the influence of switch reinforcers. Because estimates of parameters were more meaningful when using the more theoretical stay/switch equation it is preferred. PMID:26299548

An alternative to the stay/switch equation assessed when using a changeover-delay.

PubMed

MacDonall, James S

2015-11-01

An alternative to the generalized matching equation for understanding concurrent performances is the stay/switch model. For the stay/switch model, the important events are the contingencies and behaviors at each alternative. The current experiment compares the descriptions by two stay/switch equations, the original, empirically derived stay/switch equation and a more theoretically derived equation based on ratios of stay to switch responses matching ratios of stay to switch reinforcers. The present experiment compared descriptions by the original stay/switch equation when using and not using a changeover delay. It also compared descriptions by the more theoretical equation with and without a changeover delay. Finally, it compared descriptions of the concurrent performances by these two equations. Rats were trained in 15 conditions on identical concurrent random-interval schedules in each component of a multiple schedule. A COD operated in only one component. There were no consistent differences in the variance accounted for by each equation of concurrent performances whether or not a COD was used. The simpler equation found greater sensitivity to stay than to switch reinforcers. It also found a COD eliminated the influence of switch reinforcers. Because estimates of parameters were more meaningful when using the more theoretical stay/switch equation it is preferred. Copyright © 2015 Elsevier B.V. All rights reserved.

Power-processing unit

NASA Technical Reports Server (NTRS)

Wessel, Frank J. (Inventor); Hancock, Donald J. (Inventor)

1987-01-01

Power-processing unit uses AC buses (30, 32) to supply all current dependent needs such as connections (54, 56) to an ion thruster through an inductor (88) and the primary of a transformer (90), to assure limited currents to such loads. Where temperature control is also required, such as to the main discharge vaporizer heater connection (36, 38), switches (100, 102) are serially connected with inductor (96) and the primary of transformer (98). Temperature sensor (104) controls the switches (100, 102) for temperature regulation.

A fractional-N PLL with small ΔK vco wideband LC-VCO and current-matching CP for M-DTV systems

NASA Astrophysics Data System (ADS)

Gao, Haijun; Yan, Yuepeng; Du, Zhankun; Guo, Guiliang; Zeng, Longyue

2011-06-01

An Σ-Δ fractional-N frequency synthesiser with small K vco-variation wideband LC voltage controlled oscillator (LC-VCO) and current-matching charge pump (CP) for Mobile Digital television Systems is presented. To achieve small VCO-gain (K vco) variation, a parallel switched varactor array is proposed to the conventional wideband LC-VCO with switched capacitor array, the value of the switched varactor is pre-set and both arrays are controlled by the same switching code. Perfect current matching and good stability are obtained by the improved CP with an added bias branch circuit for low reference spur. The chip was fabricated in a Taiwan Semiconductor Manufacturing Company (TSMC) 0.25 µm complementary metal-oxide-semiconductor process and draws 12 mA from a 2.5 V supply voltage. The synthesiser covers a wide tuning range from 0.82 to 1.85 GHz with two integrated LC-VCOs, and each VCO achieves a K vco variation of less than 16% with a tuning range of more than 46%. The current mismatch of CP is as low as 1.2%. The measured close-in and out-of-band phase noise are -83.5 dBc/Hz@10 kHz and -127 dBc/Hz@1 MHz, respectively, the reference spur is -76.3 dBc.

Inertial Gait Phase Detection for control of a drop foot stimulator Inertial sensing for gait phase detection.

PubMed

Kotiadis, D; Hermens, H J; Veltink, P H

2010-05-01

An Inertial Gait Phase Detection system was developed to replace heel switches and footswitches currently being used for the triggering of drop foot stimulators. A series of four algorithms utilising accelerometers and gyroscopes individually and in combination were tested and initial results are shown. Sensors were positioned on the outside of the upper shank. Tests were performed on data gathered from a subject, sufferer of stroke, implanted with a drop foot stimulator and triggered with the current trigger, the heel switch. Data tested includes a variety of activities representing everyday life. Flat surface walking, rough terrain and carpet walking show 100% detection and the ability of the algorithms to ignore non-gait events such as weight shifts. Timing analysis is performed against the current triggering method, the heel switch. After evaluating the heel switch timing against a reference system, namely the Vicon 370 marker and force plates system. Initial results show a close correlation between the current trigger detection and the inertial sensor based triggering algorithms. Algorithms were tested for stairs up and stairs down. Best results are observed for algorithms using gyroscope data. Algorithms were designed using threshold techniques for lowest possible computational load and with least possible sensor components to minimize power requirements and to allow for potential future implantation of sensor system.

Research on Electromagnetic Force Distribution and Vibration Performance of A Novel 10/4 Switched Reluctance Motor

NASA Astrophysics Data System (ADS)

Fu, Ziyu; Wang, Xinyu; Cao, Cheng; Liu, Meng; Wang, Kangxi

2017-06-01

Radial electromagnetic force is one of the main reasons causing the vibration and noise of the switched reluctance motor. Based on this, the novel structure of 10/4 pole switched reluctance motor is proposed, which increases the air gap flux and electromagnetic torque by increasing the number of stator poles. In addition, the excitation current of the stator winding is reduced by early turn-off angle. Through the finite element modelling analysis, the results show the superiority of the new type of switched reluctance motor. In the end, the vibration characteristics of the conventional motor and the new motor are compared and analysed, and the effect of the structure of this new type of switched reluctance motor is verified.

PWM Switching Strategy for Torque Ripple Minimization in BLDC Motor

NASA Astrophysics Data System (ADS)

Salah, Wael A.; Ishak, Dahaman; Hammadi, Khaleel J.

2011-05-01

This paper describes a new PWM switching strategy to minimize the torque ripples in BLDC motor which is based on sensored rotor position control. The scheme has been implemented using a PIC microcontroller to generate a modified Pulse Width Modulation (PWM) signals for driving power inverter bridge. The modified PWM signals are successfully applied to the next up-coming phase current such that its current rise is slightly delayed during the commutation instant. Experimental results show that the current waveforms of the modified PWM are smoother than that in conventional PWM technique. Hence, the output torque exhibits lower ripple contents.

Light-weight DC to very high voltage DC converter

DOEpatents

Druce, Robert L.; Kirbie, Hugh C.; Newton, Mark A.

1998-01-01

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

PubMed Central

2013-01-01

Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeOx/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HRTEM). Improved memory characteristics are observed for the Cu/GeOx/W structures as compared to the Al/GeOx/W cross-points owing to AlOx formation at the Al/GeOx interface. The RESET current increases with the increase of the CCs varying from 1 nA to 50 μA for the Cu electrode devices, while the RESET current is high (>1 mA) and independent of CCs varying from 1 nA to 500 μA for the Al electrode devices. An extra formation voltage is needed for the Al/GeOx/W devices, while a low operation voltage of ±2 V is needed for the Cu/GeOx/W cross-point devices. Repeatable bipolar resistive switching characteristics of the Cu/GeOx/W cross-point memory devices are observed with CC varying from 1 nA to 50 μA, and unipolar resistive switching is observed with CC >100 μA. High resistance ratios of 102 to 104 for the bipolar mode (CCs of 1 nA to 50 μA) and approximately 108 for the unipolar mode are obtained for the Cu/GeOx/W cross-points. In addition, repeatable switching cycles and data retention of 103 s are observed under a low current of 1 nA for future low-power, high-density, nonvolatile, nanoscale memory applications. PMID:24305116

Electroforming free controlled bipolar resistive switching in Al/CoFe2O4/FTO device with self-compliance effect

NASA Astrophysics Data System (ADS)

Munjal, Sandeep; Khare, Neeraj

2018-02-01

Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 (CFO) films using an Al (aluminum)/CoFe2O4/FTO (fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and stable resistance states without any application of compliance current, with a resistance ratio of the high resistance state (HRS) and the low resistance state (LRS) of >102. Small switching voltage (<1 volt) and lower current in both the resistance states confirm the fabrication of a low power consumption device. In the LRS, the conduction mechanism was found to be Ohmic in nature, while the high-resistance state (HRS/OFF state) was governed by the space charge-limited conduction mechanism, which indicates the presence of an interfacial layer with an imperfect microstructure near the top Al/CFO interface. The device shows nonvolatile behavior with good endurance properties, an acceptable resistance ratio, uniform resistive switching due to stable, less random filament formation/rupture, and a control over the resistive switching properties by choosing different stop voltages, which makes the device suitable for its application in future nonvolatile resistive random access memory.

Double-injection, deep-impurity switch development

NASA Technical Reports Server (NTRS)

Selim, F. A.; Whitson, D. W.

1983-01-01

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Active counter electrode in a-SiC electrochemical metallization memory

NASA Astrophysics Data System (ADS)

Morgan, K. A.; Fan, J.; Huang, R.; Zhong, L.; Gowers, R.; Ou, J. Y.; Jiang, L.; De Groot, C. H.

2017-08-01

Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In a positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher R OFF/R ON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.

An inductance Fourier decomposition-based current-hysteresis control strategy for switched reluctance motors

NASA Astrophysics Data System (ADS)

Hua, Wei; Qi, Ji; Jia, Meng

2017-05-01

Switched reluctance machines (SRMs) have attracted extensive attentions due to the inherent advantages, including simple and robust structure, low cost, excellent fault-tolerance and wide speed range, etc. However, one of the bottlenecks limiting the SRMs for further applications is its unfavorable torque ripple, and consequently noise and vibration due to the unique doubly-salient structure and pulse-current-based power supply method. In this paper, an inductance Fourier decomposition-based current-hysteresis-control (IFD-CHC) strategy is proposed to reduce torque ripple of SRMs. After obtaining a nonlinear inductance-current-position model based Fourier decomposition, reference currents can be calculated by reference torque and the derived inductance model. Both the simulations and experimental results confirm the effectiveness of the proposed strategy.

The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base

NASA Astrophysics Data System (ADS)

Karlsteen, M.; Willander, M.

1993-11-01

In this paper the total switch time for a transistor in a Direct Coupled Transistor Logic (DCTL) circuit is simulated by using Laplace transformations of the Ebers-Moll equations. The influence of doping gradients and germanium gradients in the base is investigated and their relative importance and their limitations are established. In a well designed bipolar transistor only a minor enhancement of the total switch time is obtained with the use of a doping gradient in the base. However, for bipolar transistors with base thickness over 500 Å, an improperly selected doping profile could be devastating for the total switch time. For a bipolar transistor the improvement of the total switch time due to a linear germanium gradient in the base could be up to about 30% compared with an ordinary silicon bipolar transistor. Still, a too high germanium gradient forces the normal transistor current gain (α N) to grow and the total switch time is thereby increased. Further enhancement could be achieved by the use of a second degree polynomial germanium profile in the base. Also in this case, care must be taken not to enlarge the germanium gradient too much as the total switch time then starts to increase. In all cases the betterment of the base transit time that is introduced by the electric field will not be directly used to reduce the base transit time. Instead the improvement is mostly used to lower the emitter transition charging time. However, the most important parameter to control is the normal transistor current gain (α N) that has to be kept within a narrow range to keep the total switch time low.

Driver Circuit For High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Letzer, Kevin A.

1991-01-01

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

Ultrafast magnetization reversal by picosecond electrical pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yang; Wilson, Richard B.; Gorchon, Jon

The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. Here, we unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub–10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electricalmore » switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques. The energy density required for switching is low, projecting to only 4 fJ needed to switch a (20 nm) 3 cell. This discovery introduces a new field of research into ultrafast charge current–driven spintronic phenomena and devices.« less

Magnetization switching process in a torus nanoring with easy-plane surface anisotropy

NASA Astrophysics Data System (ADS)

Alzate-Cardona, J. D.; Sabogal-Suárez, D.; Restrepo-Parra, E.

2017-11-01

We have studied the effects of surface shape anisotropy in the magnetization behavior of a torus nanoring by means of Monte Carlo simulations. Stable states (vortex and reverse vortex states) and metastable states (onion and asymmetric onion states) were found in the torus nanoring. The probability of occurrence of the metastable states (stable states) tends to decrease (increase) as the amount of Monte Carlo steps per spin, temperature steps and negative values of the anisotropy constant increase. We evaluated under which conditions it is possible to switch the magnetic state of the torus nanoring from a vortex to a reverse vortex state by applying a circular magnetic field at certain temperature interval. The switching probability (from a vortex to a reverse vortex state) depends on the value of the current intensity, which generates the circular magnetic field, and the temperature interval where the magnetic field is applied. There is a linear relationship between the current intensity and the minimum temperature interval above which the vortex state can be switched.

Magnetization switching schemes for nanoscale three-terminal spintronics devices

NASA Astrophysics Data System (ADS)

Fukami, Shunsuke; Ohno, Hideo

2017-08-01

Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

Ultrafast magnetization reversal by picosecond electrical pulses

DOE PAGES

Yang, Yang; Wilson, Richard B.; Gorchon, Jon; ...

2017-11-03

The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. Here, we unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub–10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electricalmore » switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques. The energy density required for switching is low, projecting to only 4 fJ needed to switch a (20 nm) 3 cell. This discovery introduces a new field of research into ultrafast charge current–driven spintronic phenomena and devices.« less

Cost-effectiveness of cervical cancer screening with primary human papillomavirus testing in Norway

PubMed Central

Burger, E A; Ortendahl, J D; Sy, S; Kristiansen, I S; Kim, J J

2012-01-01

Background: New screening technologies and vaccination against human papillomavirus (HPV), the necessary cause of cervical cancer, may impact optimal approaches to prevent cervical cancer. We evaluated the cost-effectiveness of alternative screening strategies to inform cervical cancer prevention guidelines in Norway. Methods: We leveraged the primary epidemiologic and economic data from Norway to contextualise a simulation model of HPV-induced cervical cancer. The current cytology-only screening was compared with strategies involving cytology at younger ages and primary HPV-based screening at older ages (31/34+ years), an option being actively deliberated by the Norwegian government. We varied the switch-age, screening interval, and triage strategies for women with HPV-positive results. Uncertainty was evaluated in sensitivity analysis. Results: Current cytology-only screening was less effective and more costly than strategies that involve switching to primary HPV testing in older ages. For unvaccinated women, switching at age 34 years to primary HPV testing every 4 years was optimal given the Norwegian cost-effectiveness threshold ($83 000 per year of life saved). For vaccinated women, a 6-year screening interval was cost-effective. When we considered a wider range of strategies, we found that an earlier switch to HPV testing (at age 31 years) may be preferred. Conclusions: Strategies involving a switch to HPV testing for primary screening in older women is expected to be cost-effective compared with current recommendations in Norway. PMID:22441643

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

NASA Technical Reports Server (NTRS)

Niedra, Janis M.; Schwarze, Gene E.

2005-01-01

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

Auxiliary resonant DC tank converter

DOEpatents

Peng, Fang Z.

2000-01-01

An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

Coupling and Switching in Optically Resonant Periodic Electrode Structures

NASA Astrophysics Data System (ADS)

Bieber, Amy Erica

This thesis describes coupling and switching of optical radiation using metal-semiconductor-metal (MSM) structures, specifically in a metal-on-silicon waveguide configuration. The structures which are the subject of this research have the special advantage of being VLSI -compatible; this is very important for the ultimate acceptance of any integrated optoelectronics technology by the mainstream semiconductor community. To date, research efforts in VLSI electronics, MSM detectors, metal devices, and optical switching have existed as separate entities with decidedly different goals. This work attempts to unite these specialties; an interdigitated array of metal fingers on a silicon waveguide allows for (1) fabrication processes which are well-understood and compatible with current or next-generation semiconductor manufacturing standards, (2) electrical bias capability which can potentially provide modulation, tuning, and enhanced speed, and (3) potentially efficient waveguide coupling which takes advantage of TM coupling. The latter two items are made possible by the use of metallic gratings, which sets this work apart from previous optical switching results. This MSM structure represents an important step in uniting four vital technologies which, taken together, can lead to switching performance and operational flexibility which could substantially advance the capabilities of current optoelectronic devices. Three different designs were successfully used to examine modulation and optical switching based upon nonlinear interactions in the silicon waveguide. First, a traditional Bragg reflector design with input and output couplers on either side was used to observe switching of nanosecond-regime Nd:YAG pulses. This structure was thermally tuned to obtain a variety of switching dynamics. Next, a phase-shift was incorporated into the Bragg reflector, and again thermally-tunable switching dynamics were observed, but with the added advantage of a reduction in the energy requirements for optical switching. Finally, the roles of the coupler and Bragg reflector were combined in a normal -incidence structure which exhibited nonlinear reflectivity modulation. This has not only been the first experimental demonstration of optical switching in a metal-semiconductor waveguide structure, but, to our knowledge, one of the first such demonstrations using a nonlinear phase-shifted or normal incidence grating of any kind.

Voltage-controlled magnetization switching in MRAMs in conjunction with spin-transfer torque and applied magnetic field

NASA Astrophysics Data System (ADS)

Munira, Kamaram; Pandey, Sumeet C.; Kula, Witold; Sandhu, Gurtej S.

2016-11-01

Voltage-controlled magnetic anisotropy (VCMA) effect has attracted a significant amount of attention in recent years because of its low cell power consumption during the anisotropy modulation of a thin ferromagnetic film. However, the applied voltage or electric field alone is not enough to completely and reliably reverse the magnetization of the free layer of a magnetic random access memory (MRAM) cell from anti-parallel to parallel configuration or vice versa. An additional symmetry-breaking mechanism needs to be employed to ensure the deterministic writing process. Combinations of voltage-controlled magnetic anisotropy together with spin-transfer torque (STT) and with an applied magnetic field (Happ) were evaluated for switching reliability, time taken to switch with low error rate, and energy consumption during the switching process. In order to get a low write error rate in the MRAM cell with VCMA switching mechanism, a spin-transfer torque current or an applied magnetic field comparable to the critical current and field of the free layer is necessary. In the hybrid processes, the VCMA effect lowers the duration during which the higher power hungry secondary mechanism is in place. Therefore, the total energy consumed during the hybrid writing processes, VCMA + STT or VCMA + Happ, is less than the energy consumed during pure spin-transfer torque or applied magnetic field switching.

Current-limiting and ultrafast system for the characterization of resistive random access memories.

PubMed

Diaz-Fortuny, J; Maestro, M; Martin-Martinez, J; Crespo-Yepes, A; Rodriguez, R; Nafria, M; Aymerich, X

2016-06-01

A new system for the ultrafast characterization of resistive switching phenomenon is developed to acquire the current during the Set and Reset process in a microsecond time scale. A new electronic circuit has been developed as a part of the main setup system, which is capable of (i) applying a hardware current limit ranging from nanoampers up to miliampers and (ii) converting the Set and Reset exponential gate current range into an equivalent linear voltage. The complete system setup allows measuring with a microsecond resolution. Some examples demonstrate that, with the developed setup, an in-depth analysis of resistive switching phenomenon and random telegraph noise can be made.

FAST OPENING SWITCH

DOEpatents

Bender, M.; Bennett, F.K.; Kuckes, A.F.

1963-09-17

A fast-acting electric switch is described for rapidly opening a circuit carrying large amounts of electrical power. A thin, conducting foil bridges a gap in this circuit and means are provided for producing a magnetic field and eddy currents in the foil, whereby the foil is rapidly broken to open the circuit across the gap. Advantageously the foil has a hole forming two narrow portions in the foil and the means producing the magnetic field and eddy currents comprises an annular coil having its annulus coaxial with the hole in the foil and turns adjacent the narrow portions of the foil. An electrical current flows through the coil to produce the magnetic field and eddy currents in the foil. (AEC)

A tweaking principle for executive control: neuronal circuit mechanism for rule-based task switching and conflict resolution.

PubMed

Ardid, Salva; Wang, Xiao-Jing

2013-12-11

A hallmark of executive control is the brain's agility to shift between different tasks depending on the behavioral rule currently in play. In this work, we propose a "tweaking hypothesis" for task switching: a weak rule signal provides a small bias that is dramatically amplified by reverberating attractor dynamics in neural circuits for stimulus categorization and action selection, leading to an all-or-none reconfiguration of sensory-motor mapping. Based on this principle, we developed a biologically realistic model with multiple modules for task switching. We found that the model quantitatively accounts for complex task switching behavior: switch cost, congruency effect, and task-response interaction; as well as monkey's single-neuron activity associated with task switching. The model yields several testable predictions, in particular, that category-selective neurons play a key role in resolving sensory-motor conflict. This work represents a neural circuit model for task switching and sheds insights in the brain mechanism of a fundamental cognitive capability.

Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Otsuka, Shintaro; Takeda, Ryouta; Furuya, Saeko; Shimizu, Tomohiro; Shingubara, Shouso; Iwata, Nobuyuki; Watanabe, Tadataka; Takano, Yoshiki; Takase, Kouichi

2012-06-01

We have investigated the current-voltage characteristics of a resistive switching memory (ReRAM), especially the reproducibility of the switching voltage between an insulating state and a metallic state. The poor reproducibility hinders the practical use of this memory. According to a filament model, the variation of the switching voltage may be understood in terms of the random choice of filaments with different conductivities and lengths at each switching. A limitation of the number of conductive paths is expected to lead to the suppression of the variation of switching voltage. In this study, two strategies for the limitation have been proposed using an anodic porous alumina (APA). The first is the reduction of the number of conductive paths by restriction of the contact area between the top electrodes and the insulator. The second is the lowering of the resistivity of the insulator, which makes it possible to grow filaments with the same characteristics by electrochemical treatments using a pulse-electroplating technique.

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

NASA Astrophysics Data System (ADS)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, ChangLi; Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237; Wang, XueJun

2016-05-15

The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designedmore » using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.« less

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Transverse Mode Dynamics of VCSELs Undergoing Current Modulation

NASA Technical Reports Server (NTRS)

Goorjian, Peter M.; Ning, C. Z.; Agrawal, Govind

2000-01-01

Transverse mode dynamics of a 20-micron-diameter vertical-cavity surface-emitting laser (VCSEL) undergoing gain switching by deep current modulation is studied numerically. The direct current (dc) level is set slightly below threshold and is modulated by a large alternating current (ac). The resulting optical pulse train and transverse-mode patterns are obtained numerically. The ac frequency is varied from 2.5 GHz to 10 GHz, and the ac amplitude is varied from one-half to four times that of the dc level. At high modulation frequencies, a regular pulse train is not generated unless the ac amplitude is large enough. At all modulation frequencies, the transverse spatial profile switches from single-mode to multiple-mode pattern as the ac pumping level is increased. Optical pulse widths vary in the range 5-30 ps. with the pulse width decreasing when either the frequency is increased or the ac amplitude is decreased. The numerical modeling uses an approximation form of the semiconductor Maxwell-Bloch equations. Temporal evolution of the spatial profiles of the laser (and of carrier density) is determined without any assumptions about the type or number of modes. Keywords: VCSELs, current modulation, gain switching, transverse mode dynamics, computational modeling

Silicon device performance measurements to support temperature range enhancement

NASA Technical Reports Server (NTRS)

Bromstead, James; Weir, Bennett; Nelms, R. Mark; Johnson, R. Wayne; Askew, Ray

1994-01-01

Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.

Spatially and time-resolved magnetization dynamics driven by spin-orbit torques

NASA Astrophysics Data System (ADS)

Baumgartner, Manuel; Garello, Kevin; Mendil, Johannes; Avci, Can Onur; Grimaldi, Eva; Murer, Christoph; Feng, Junxiao; Gabureac, Mihai; Stamm, Christian; Acremann, Yves; Finizio, Simone; Wintz, Sebastian; Raabe, Jörg; Gambardella, Pietro

2017-10-01

Current-induced spin-orbit torques are one of the most effective ways to manipulate the magnetization in spintronic devices, and hold promise for fast switching applications in non-volatile memory and logic units. Here, we report the direct observation of spin-orbit-torque-driven magnetization dynamics in Pt/Co/AlOx dots during current pulse injection. Time-resolved X-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a subnanosecond current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of the damping-like and field-like spin-orbit torques and the Dzyaloshinskii-Moriya interaction, and show that reproducible switching events can be obtained for over 1012 reversal cycles.

Open-loop correction for an eddy current dominated beam-switching magnet.

PubMed

Koseki, K; Nakayama, H; Tawada, M

2014-04-01

A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10(-4) to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the required flat-top period. The measured field flatness was 5 × 10(-3). By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10(-4), which is an acceptable value, was achieved.

Open-loop correction for an eddy current dominated beam-switching magnet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koseki, K., E-mail: kunio.koseki@kek.jp; Nakayama, H.; Tawada, M.

2014-04-15

A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10{sup −4} to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the requiredmore » flat-top period. The measured field flatness was 5 × 10{sup −3}. By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10{sup −4}, which is an acceptable value, was achieved.« less

Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

DOE PAGES

Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; ...

2015-09-08

In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill outmore » a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.« less

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

NASA Astrophysics Data System (ADS)

Haris, Norshakila; Kyabaggu, Peter B. K.; Alim, Mohammad A.; Rezazadeh, Ali A.

2017-05-01

In this paper, we demonstrate for the first time the implementation of three-dimensional multilayer technology on GaAs-based pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint’s Own Model—Level 3, developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

Synchronization of Switched Neural Networks With Communication Delays via the Event-Triggered Control.

PubMed

Wen, Shiping; Zeng, Zhigang; Chen, Michael Z Q; Huang, Tingwen

2017-10-01

This paper addresses the issue of synchronization of switched delayed neural networks with communication delays via event-triggered control. For synchronizing coupled switched neural networks, we propose a novel event-triggered control law which could greatly reduce the number of control updates for synchronization tasks of coupled switched neural networks involving embedded microprocessors with limited on-board resources. The control signals are driven by properly defined events, which depend on the measurement errors and current-sampled states. By using a delay system method, a novel model of synchronization error system with delays is proposed with the communication delays and event-triggered control in the unified framework for coupled switched neural networks. The criteria are derived for the event-triggered synchronization analysis and control synthesis of switched neural networks via the Lyapunov-Krasovskii functional method and free weighting matrix approach. A numerical example is elaborated on to illustrate the effectiveness of the derived results.

Cultural Frame Switching and Emotion among Mexican Americans

ERIC Educational Resources Information Center

Kreitler, Crystal Mata; Dyson, Kara S.

2016-01-01

Recent evidence indicates that bicultural individuals shift between interpretive frames rooted in different cultures in response to cues encountered in a given situation. The explanation for these shifts has been labeled "cultural frame switching." The current research sought to investigate the effect of priming culture among Mexican…

A graphene-based non-volatile memory

NASA Astrophysics Data System (ADS)

Loisel, Loïc.; Maurice, Ange; Lebental, Bérengère; Vezzoli, Stefano; Cojocaru, Costel-Sorin; Tay, Beng Kang

2015-09-01

We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET < VRESET , where SET is the process decreasing the resistance and RESET the process increasing the resistance. We achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

NASA Astrophysics Data System (ADS)

Han, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiao

2017-08-01

The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

An X-Band SOS Resistive Gate-Insulator-Semiconductor /RIS/ switch

NASA Astrophysics Data System (ADS)

Kwok, S. P.

1980-02-01

The new X-Band Resistive Gate-Insulator-Semiconductor (RIS) switch has been fabricated on silicon-on-sapphire, and its equivalent circuit model characterized. An RIS SPST switch with 20-dB on/off isolation, 1.2-dB insertion loss, and power handling capacity in excess of 20-W peak has been achieved at X band. The device switching time is on the order of 600 ns, and it requires negligible control holding current in both on and off states. The device is compatible with monolithic integrated-circuit technology and thus is suitable for integration into low-cost monolithic phase shifters or other microwave integrated circuits.

When global rule reversal meets local task switching: The neural mechanisms of coordinated behavioral adaptation to instructed multi-level demand changes.

PubMed

Shi, Yiquan; Wolfensteller, Uta; Schubert, Torsten; Ruge, Hannes

2018-02-01

Cognitive flexibility is essential to cope with changing task demands and often it is necessary to adapt to combined changes in a coordinated manner. The present fMRI study examined how the brain implements such multi-level adaptation processes. Specifically, on a "local," hierarchically lower level, switching between two tasks was required across trials while the rules of each task remained unchanged for blocks of trials. On a "global" level regarding blocks of twelve trials, the task rules could reverse or remain the same. The current task was cued at the start of each trial while the current task rules were instructed before the start of a new block. We found that partly overlapping and partly segregated neural networks play different roles when coping with the combination of global rule reversal and local task switching. The fronto-parietal control network (FPN) supported the encoding of reversed rules at the time of explicit rule instruction. The same regions subsequently supported local task switching processes during actual implementation trials, irrespective of rule reversal condition. By contrast, a cortico-striatal network (CSN) including supplementary motor area and putamen was increasingly engaged across implementation trials and more so for rule reversal than for nonreversal blocks, irrespective of task switching condition. Together, these findings suggest that the brain accomplishes the coordinated adaptation to multi-level demand changes by distributing processing resources either across time (FPN for reversed rule encoding and later for task switching) or across regions (CSN for reversed rule implementation and FPN for concurrent task switching). © 2017 Wiley Periodicals, Inc.