High voltage DC power supply

DOEpatents

Droege, Thomas F.

1989-01-01

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

Analysis Impact of Distributed Generation Injection to Profile of Voltage and Short-Circuit Fault in 20 kV Distribution Network System

NASA Astrophysics Data System (ADS)

Mulyadi, Y.; Sucita, T.; Rahmawan, M. D.

2018-01-01

This study was a case study in PT. PLN (Ltd.) APJ Bandung area with the subject taken was the installation of distributed generation (DG) on 20-kV distribution channels. The purpose of this study is to find out the effect of DG to the changes in voltage profile and three-phase short circuit fault in the 20-kV distribution system with load conditions considered to be balanced. The reason for this research is to know how far DG can improve the voltage profile of the channel and to what degree DG can increase the three-phase short circuit fault on each bus. The method used in this study was comparing the simulation results of power flow and short-circuit fault using ETAP Power System software with manual calculations. The result obtained from the power current simulation before the installation of DG voltage was the drop at the end of the channel at 2.515%. Meanwhile, the three-phase short-circuit current fault before the DG installation at the beginning of the channel was 13.43 kA. After the installation of DG with injection of 50%, DG power obtained voltage drop at the end of the channel was 1.715% and the current fault at the beginning network was 14.05 kA. In addition, with injection of 90%, DG power obtained voltage drop at the end of the channel was 1.06% and the current fault at the beginning network was 14.13%.

System and method for charging electrochemical cells in series

DOEpatents

DeLuca, William H.; Hornstra, Jr, Fred; Gelb, George H.; Berman, Baruch; Moede, Larry W.

1980-01-01

A battery charging system capable of equalizing the charge of each individual cell at a selected full charge voltage includes means for regulating charger current to first increase current at a constant rate until a bulk charging level is achieved or until any cell reaches a safe reference voltage. A system controller then begins to decrease the charging rate as long as any cell exceeds the reference voltage until an equalization current level is reached. At this point, the system controller activates a plurality of shunt modules to permit shunting of current around any cell having a voltage exceeding the reference voltage. Leads extending between the battery of cells and shunt modules are time shared to permit alternate shunting of current and voltage monitoring without the voltage drop caused by the shunt current. After each cell has at one time exceeded the reference voltage, the charging current is terminated.

Analog circuit for controlling acoustic transducer arrays

DOEpatents

Drumheller, Douglas S.

1991-01-01

A simplified ananlog circuit is presented for controlling electromechanical transducer pairs in an acoustic telemetry system. The analog circuit of this invention comprises a single electrical resistor which replaces all of the digital components in a known digital circuit. In accordance with this invention, a first transducer in a transducer pair of array is driven in series with the resistor. The voltage drop across this resistor is then amplified and used to drive the second transducer. The voltage drop across the resistor is proportional and in phase with the current to the transducer. This current is approximately 90 degrees out of phase with the driving voltage to the transducer. This phase shift replaces the digital delay required by the digital control circuit of the prior art.

HIGH VOLTAGE GENERATOR

DOEpatents

Zito, G.V.

1959-04-21

This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

Epitaxial thinning process

NASA Technical Reports Server (NTRS)

Siegel, C. M. (Inventor)

1984-01-01

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Development and fabrication of a high current, fast recovery power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Electrochemical measurements on a droplet using gold microelectrodes

NASA Astrophysics Data System (ADS)

Jenabi, Amin; Souri, Asma; Rastkhadiv, Ali

2016-03-01

Facile methods of ion recognition are important for the fabrication of electronic tongue systems. In this work, we demonstrate performing pulsed conductometry on microliter electrolyte droplets dropped on gold microelectrodes vapor deposited on soda lime glass slides. A droplet is dropped between two microelectrodes when a voltage waveform from a preprogramed power supply is applied on them. The temporal variation of the electric current passing through the droplet is recorded, digitized and stored. The obtained data are compared with the database formed out of the previous experiences for the classification of the sample electrolytes. It is shown that the shape of the voltage waveform is the important parameter of the process. We devised a method for the optimization of the voltage waveform profile for obtaining the maximum of discriminating information from the recorded current variations.

A Fresh Look at the Semiconductor Bandgap Using Constant Current Data

ERIC Educational Resources Information Center

Ocaya, R. O.; Luhanga, P. V. C.

2011-01-01

It is shown that the well-known linear variation of p-n diode terminal voltage with temperature at different fixed forward currents allows easy and accurate determination of the semiconductor ideality factor and bandgap from only two data points. This is possible if the temperature difference required to maintain the same diode voltage drop can be…

Modeling the voltage loss mechanisms in lithium-sulfur cells: the importance of electrolyte resistance and precipitation kinetics.

PubMed

Zhang, Teng; Marinescu, Monica; O'Neill, Laura; Wild, Mark; Offer, Gregory

2015-09-21

Understanding of the complex electrochemical, transport, and phase-change phenomena in Li-S cells requires experimental characterization in tandem with mechanistic modeling. However, existing Li-S models currently contradict some key features of experimental findings, particularly the evolution of cell resistance during discharge. We demonstrate that, by introducing a concentration-dependent electrolyte conductivity, the correct trends in voltage drop due to electrolyte resistance and activation overpotentials are retrieved. In addition, we reveal the existence of an often overlooked potential drop mechanism in the low voltage-plateau which originates from the limited rate of Li2S precipitation.

Lithium-cupric sulfide cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuesta, A.J.; Bump, D.D.

1980-01-01

Lithium cells have become the primary power source for cardiac pacemakers due to their reliability and longevity at low current drain rates. A lithium-cupric sulfide cell was developed which makes maximum use of the shape of a pacemaker's battery compartment. The cell has a stable voltage throughout 90% of its lifetime. It then drops to a second stable voltage before depletion. The voltage drop creates a small decrease in pacemaker rate, which alerts the physician to replace the pacemaker. No loss of capacity due to self-discharge as been seen to date, and cells have proven to be safe under extrememore » conditions. 2 refs.« less

On the Mechanism of Maintenance and Instability of the Overvoltage Low-Pressure Discharge Forming a High-Current Runaway Electron Beam

NASA Astrophysics Data System (ADS)

Akishev, Yu. S.; Balakirev, A. A.; Karal'nik, V. B.; Medvedev, M. A.; Petryakov, A. V.; Trushkin, N. I.; Shafikov, A. G.

2017-12-01

Results of experiments on the study of dynamics of an overvoltage discharge at the low pressure p = 0.5-2.5 Torr up to its transition to the high-current low-voltage regime are presented, and the instability mechanism leading to a sharp voltage drop across the discharge is suggested.

Testing the Auroral Current-Voltage Relation in Multiple Arcs

NASA Astrophysics Data System (ADS)

Cameron, T. G.; Knudsen, D. J.; Cully, C. M.

2013-12-01

The well-known current-voltage relation within auroral inverted-V regions [Knight, Planet. Space Sci., 21, 741, 1973] predicts current carried by an auroral flux tube given the total potential drop between a plasma-sheet source region and the ionosphere. Numerous previous studies have tested this relation using spacecraft that traverse auroral arcs at low (ionospheric) or mid altitudes. Typically, the potential drop is estimated at the peak of the inverted-V, and field-aligned current is estimated from magnetometer data; statistical information is then gathered over many arc crossings that occur over a wide range of source conditions. In this study we use electron data from the FAST satellite to examine the current-voltage relation in multiple arc sets, in which the key source parameters (plasma sheet density and temperature) are presumed to be identical. We argue that this approach provides a more sensitive test of the Knight relation, and we seek to explain remaining variability with factors other than source variability. This study is supported by a grant from the Natural Sciences and Engineering Research Council of Canada.

Rain Drop Charge Sensor

NASA Astrophysics Data System (ADS)

S, Sreekanth T.

begin{center} Large Large Rain Drop Charge Sensor Sreekanth T S*, Suby Symon*, G. Mohan Kumar (1) , S. Murali Das (2) *Atmospheric Sciences Division, Centre for Earth Science Studies, Thiruvananthapuram 695011 (1) D-330, Swathi Nagar, West Fort, Thiruvananthapuram 695023 (2) Kavyam, Manacaud, Thiruvananthapuram 695009 begin{center} ABSTRACT To study the inter-relations with precipitation electricity and precipitation microphysical parameters a rain drop charge sensor was designed and developed at CESS Electronics & Instrumentation Laboratory. Simultaneous measurement of electric charge and fall speed of rain drops could be done using this charge sensor. A cylindrical metal tube (sensor tube) of 30 cm length is placed inside another thick metal cover opened at top and bottom for electromagnetic shielding. Mouth of the sensor tube is exposed and bottom part is covered with metal net in the shielding cover. The instrument is designed in such a way that rain drops can pass only through unhindered inside the sensor tube. When electrically charged rain drops pass through the sensor tube, it is charged to the same magnitude of drop charge but with opposite polarity. The sensor tube is electrically connected the inverted input of a current to voltage converter operational amplifier using op-amp AD549. Since the sensor is electrically connected to the virtual ground of the op-amp, the charge flows to the ground and the generated current is converted to amplified voltage. This output voltage is recorded using a high frequency (1kHz) voltage recorder. From the recorded pulse, charge magnitude, polarity and fall speed of rain drop are calculated. From the fall speed drop diameter also can be calculated. The prototype is now under test running at CESS campus. As the magnitude of charge in rain drops is an indication of accumulated charge in clouds in lightning, this instrument has potential application in the field of risk and disaster management. By knowing the charge magnitude of initial drops from a precipitation event, gross cloud charge can be estimated and necessary precautions can be taken during convective cloud events. Being a site of high lightning incidence in tropics, Kerala state is affected in India and calls for much attention in lightning hazards mitigation. Installing this charge sensor and atmospheric electric field mill, an attempt to a better warning system can be attempted.

Optimal line drop compensation parameters under multi-operating conditions

NASA Astrophysics Data System (ADS)

Wan, Yuan; Li, Hang; Wang, Kai; He, Zhe

2017-01-01

Line Drop Compensation (LDC) is a main function of Reactive Current Compensation (RCC) which is developed to improve voltage stability. While LDC has benefit to voltage, it may deteriorate the small-disturbance rotor angle stability of power system. In present paper, an intelligent algorithm which is combined by Genetic Algorithm (GA) and Backpropagation Neural Network (BPNN) is proposed to optimize parameters of LDC. The objective function proposed in present paper takes consideration of voltage deviation and power system oscillation minimal damping ratio under multi-operating conditions. A simulation based on middle area of Jiangxi province power system is used to demonstrate the intelligent algorithm. The optimization result shows that coordinate optimized parameters can meet the multioperating conditions requirement and improve voltage stability as much as possible while guaranteeing enough damping ratio.

Novel trench gate field stop IGBT with trench shorted anode

NASA Astrophysics Data System (ADS)

Xudong, Chen; Jianbing, Cheng; Guobing, Teng; Houdong, Guo

2016-05-01

A novel trench field stop (FS) insulated gate bipolar transistor (IGBT) with a trench shorted anode (TSA) is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop. Project supported by the National Natural Science Foundation of China (No. 61274080) and the Postdoctoral Science Foundation of China (No. 2013M541585).

A Wide Area Bipolar Cascade Resonant Cavity Light Emitting Diode for a Hybrid Range-Intensity Sensor

DTIC Science & Technology

2008-06-19

forward bias voltage and a small amount of current flow- ing due to a forward biased tunnel current. (d) shows a drop in the forward bias current due...flowing due to a forward biased tunnel current. (d) shows a drop in the forward bias current due to the widening of the forbidden band, and fewer...3-14 xii Figure Page 3.10. Energy bands of a tunnel junction at various bias levels. (a) shows the junction under reverse bias with holes in

OBSAPS Data Acquisition System: Operator’s Manual and System Overview

DTIC Science & Technology

2011-05-01

Explanation of Druck Voltage to Depth Conversion used during OBSAPS (April-May’11)   25   Druck  Pressure  sensor  conversion  from...for H-91, PA Voltage, PA Current and Sonobuoy and Druck pressure sensor analog inputs. 6. Software settable thresholds for H-91, PA Voltage, PA...17. Custom dry side box for Druck Pressure Sensor supply voltage and dropping resistor. 18. Battery 9-30VDC for supplying Druck power 19. Druck PTX

5.0 kV breakdown-voltage vertical GaN p-n junction diodes

NASA Astrophysics Data System (ADS)

Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

2018-04-01

A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

Analysis of a Van de Graaff Generator for EMP Direct Current Survivability Testing

DTIC Science & Technology

2013-03-01

voltage source, VS , equals the voltage load, VL, as shown in the schematic of Figure 12. When impedance is matched, maximum power is transferred...maximum power is 42 transmitted, and VS =VL. The voltage drops shown in Table 7 are from the skin effect at frequencies above 1 MHz, as well... voltage . 46 3.1.6 Response to CVR Location The purpose of these experiments was to find the best cable and connector attachment that would

Maximum time-dependent space-charge limited diode currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Griswold, M. E.; Fisch, N. J.

Recent papers claim that a one dimensional (1D) diode with a time-varying voltage drop can transmit current densities that exceed the Child-Langmuir (CL) limit on average, apparently contradicting a previous conjecture that there is a hard limit on the average current density across any 1D diode, as t → ∞, that is equal to the CL limit. However, these claims rest on a different definition of the CL limit, namely, a comparison between the time-averaged diode current and the adiabatic average of the expression for the stationary CL limit. If the current were considered as a function of the maximummore » applied voltage, rather than the average applied voltage, then the original conjecture would not have been refuted.« less

Synchronous Half-Wave Rectifier

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1989-01-01

Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.

Magnetic field line reconnection experiments. V - Current disruptions and double layers

NASA Technical Reports Server (NTRS)

Stenzel, R. L.; Gekelman, W.; Wild, N.

1983-01-01

An investigation is conducted of the stability of a large laboratory plasma current sheet, which has been generated in the process of magnetic field line reconnection, with respect to local current increases. Magnetic flux variations in regions remote from the current sheet generate an inductive voltage in the current loop that drops off inside the plasma in the form of a potential double layer, leading to particle acceleration with velocities much larger than those expected from the steady state electric fields in the plasma. A model for the mechanism of the current disruptions is formulated in which the potential structure leads to ion expulsion, creating a localized density drop. The associated current drop in an inductive circuit drives the potential structure, providing feedback for the disruptive instability. Similarities to, and differences from, magnetospheric substorm phenomena are noted.

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

2014-11-01

The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

MHD (magnetohydrodynamics) channel development: Quarterly report for January 1987-March 1987

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1987-04-01

During the report period several slag doping tests were performed. Four of these tests are described in this report. The results were generally encouraging. Four dopants were investigated: Fe/sub 2/O/sub 3/, Fe/sub 3/O/sub 4/, MnO, and CrO/sub 2/. All but the CrO/sub 2/ proved effective within some range of dopant flow rate. At flow rates above or below this range none of the dopants were desirable. The proper ranges for each of the dopants was coarsely mapped in these experiments. When the dopants were injected directly on the anode wall a power increase was observed. This indicates a possible reductionmore » in the voltage drop due to the presence of the dopant. No power gain or loss was observed when the dopant was injected on the cathode wall. However, inter-cathode voltages were observed to spread more uniformly along the wall. High voltages decreased and low voltages increased. This result should help to reduce wear on the cathodes and their neighboring wall elements by reducing the local electrical field. Current control circuits were tested on both MK VI and MK VII type generators and components for consolidation circuits ordered. Solutions to waste disposal problems created by the implementation of new environmental regulations are being investigated. The MHD generator data from the CDIF 87-SEED-1, 87-SEED-2, and 87-SEED-3 tests have been analyzed and the results are presented in this report. The results of the SIDA model presented in this quarterly report are obtained by assuming a constant boundary layer voltage drop. Variations in the boundary layer voltage drop as a result of diagonal loading changes, iron oxide addition, or seeding rates changes were not considered. Corrections for the effects of ..delta..V/sub b1/ will be made to the results of SIDA when the voltage drop measurements become available.« less

Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

NASA Astrophysics Data System (ADS)

Mamedov, R. K.; Aslanova, A. R.

2018-06-01

The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A super junction SiGe low-loss fast switching power diode

NASA Astrophysics Data System (ADS)

Ma, Li; Gao, Yong

2009-01-01

This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66 V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2. The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.

Direct Current Series Circuits: An Educational Module.

ERIC Educational Resources Information Center

Sturgess, Keith

This module was developed as remedial material for physics students who have difficulty understanding concepts of circuits and calculating resistances, and voltage drops and currents. Lists of prerequisite skills and instructional objectives are followed by a pretest (with answers). Students are directed to the subject matter in the module based…

Force and light tuning vertical tunneling current in the atomic layered MoS2.

PubMed

Li, Feng; Lu, Zhixing; Lan, Yann-Wen; Jiao, Liying; Xu, Minxuan; Zhu, Xiaoyang; Zhang, Xiankun; Wu, Hualin; Qi, Junjie

2018-07-06

In this work, the vertical electrical transport behavior of bilayer MoS 2 under the coupling of force and light was explored by the use of conductive atomic force microscopy. We found that the current-voltage behavior across the tip-MoS 2 -Pt junction is a tunneling current that can be well fitted by a Simmons approximation. The transport behavior is direct tunneling at low bias and Fowler-Nordheim tunneling at high bias, and the transition voltage and tunnel barrier height are extracted. The effect of force and light on the effective band gap of the junction is investigated. Furthermore, the source-drain current drops surprisingly when we continually increase the force, and the dropping point is altered by the provided light. This mechanism is responsible for the tuning of tunneling barrier height and width by force and light. These results provide a new way to design devices that take advantage of ultrathin two-dimensional materials. Ultrashort channel length electronic components that possess tunneling current are important for establishing high-efficiency electronic and optoelectronic systems.

Non-equilibrium transport in the quantum dot: quench dynamics and non-equilibrium steady state

NASA Astrophysics Data System (ADS)

Culver, Adrian; Andrei, Natan

We calculate the non-equilibrium current driven by a voltage drop across a quantum dot. The system is described by the two lead Anderson model at zero temperature with on-site Coulomb repulsion and non-interacting, linearized leads. We prepare the system in an initial state consisting of a free Fermi sea in each lead with the voltage drop given as the difference between the two Fermi levels. We quench the system by coupling the dot to the leads at t =0 and following the time evolution of the wavefunction. In the long time limit a new type of Bethe Ansatz wavefunction emerges, which satisfies the Lippmann-Schwinger equation with the two Fermi seas serving as the boundary conditions. The solution describes the non-equilibrium steady state of the system. We use this solution to compute the infinite time limit of the expectation value of the current operator at a given voltage, yielding the I-V characteristic. The calculation is non-perturbative and exact. Research supported by NSF Grant DMR 1410583.

Non-equilibrium transport in the quantum dot: quench dynamics and non-equilibrium steady state

NASA Astrophysics Data System (ADS)

Culver, Adrian; Andrei, Natan

We present an exact method of calculating the non-equilibrium current driven by a voltage drop across a quantum dot. The system is described by the two lead Anderson model at zero temperature with on-site Coulomb repulsion and non-interacting, linearized leads. We prepare the system in an initial state consisting of a free Fermi sea in each lead with the voltage drop given as the difference between the two Fermi levels. We quench the system by coupling the dot to the leads at t = 0 and following the time evolution of the wavefunction. In the long time limit a new type of Bethe Ansatz wavefunction emerges, which satisfies the Lippmann-Schwinger equation with the two Fermi seas serving as the boundary conditions. This exact, non-perturbative solution describes the non-equilibrium steady state of the system. We describe how to use this solution to compute the infinite time limit of the expectation value of the current operator at a given voltage, which would yield the I-V characteristic of the dot. Research supported by NSF Grant DMR 1410583.

O the Electrohydrodynamics of Drop Extraction from a Conductive Liquid Meniscus

NASA Astrophysics Data System (ADS)

Wright, Graham Scott

This thesis is concerned with the use of an electric field in the extraction of liquid drops from a capillary orifice or nozzle. The motivating application is ink jet printing. Current drop-on-demand ink jets use pressure pulses to eject drops. Literature on electrostatic spraying suggests that by using an electric field, drops could be produced with a wider range of sizes and speeds than is possible with pressure ejection. Previous efforts to apply electric spraying to printing or similar selective coating tasks have taken an experimental approach based on steady or periodic spraying phenomena, without attempting cycle -by-cycle drop control. The centerpiece of this thesis is a simulation tool developed to explore such possibilities. A simplified analytic model is developed as a preliminary step, yielding formulas for force and time scales that provide an appropriate basis for nondimensionalization of the governing differential equations; important dimensionless parameters are identified. The complete self-consistent model permits simulation of meniscus behavior under time -varying applied voltage or pressure, with the electric field solution continually updated as the surface changes shape. The model uses a quasi-one-dimensional hydrodynamic formulation and a two-dimensional axisymmetric boundary element solution for the electric field. The simulation is checked against experimental results for meniscus stability, resonant modes, and drop emission under electric field. The simulation faithfully captures important qualitative aspects of meniscus behavior and gives reasonable quantitative agreement within the limitations of the model. Insights gained in simulation point the way to a successful laboratory demonstration of drop extraction using a shaped voltage pulse. Drop size control is pursued in simulation using pressure and voltage pulses both alone and in combination, for both light and viscous liquids. Combining pressure and field pulses is shown to be synergistic; drop volumes over a range of 175 to 1 were obtained, while maintaining good drop velocity. The differing strategies for obtaining large and small drops are described. Drop extraction using only the electric field is more difficult, but promising approaches remain open.

Intelligent energy harvesting scheme for microbial fuel cells: Maximum power point tracking and voltage overshoot avoidance

NASA Astrophysics Data System (ADS)

Alaraj, Muhannad; Radenkovic, Miloje; Park, Jae-Do

2017-02-01

Microbial fuel cells (MFCs) are renewable and sustainable energy sources that can be used for various applications. The MFC output power depends on its biochemical conditions as well as the terminal operating points in terms of output voltage and current. There exists one operating point that gives the maximum possible power from the MFC, maximum power point (MPP), for a given operating condition. However, this MPP may vary and needs to be tracked in order to maintain the maximum power extraction from the MFC. Furthermore, MFC reactors often develop voltage overshoots that cause drastic drops in the terminal voltage, current, and the output power. When the voltage overshoot happens, an additional control measure is necessary as conventional MPPT algorithms will fail because of the change in the voltage-current relationship. In this paper, the extremum seeking (ES) algorithm was used to track the varying MPP and a voltage overshoot avoidance (VOA) algorithm is developed to manage the voltage overshoot conditions. The proposed ES-MPPT with VOA algorithm was able to extract 197.2 mJ during 10-min operation avoiding voltage overshoot, while the ES MPPT-only scheme stopped harvesting after only 18.75 mJ because of the voltage overshoot happened at 0.4 min.

A robust low quiescent current power receiver for inductive power transmission in bio implants

NASA Astrophysics Data System (ADS)

Helalian, Hamid; Pasandi, Ghasem; Jafarabadi Ashtiani, Shahin

2017-05-01

In this paper, a robust low quiescent current complementary metal-oxide semiconductor (CMOS) power receiver for wireless power transmission is presented. This power receiver consists of three main parts including rectifier, switch capacitor DC-DC converter and low-dropout regulator (LDO) without output capacitor. The switch capacitor DC-DC converter has variable conversion ratios and synchronous controller that lets the DC-DC converter to switch among five different conversion ratios to prevent output voltage drop and LDO regulator efficiency reduction. For all ranges of output current (0-10 mA), the voltage regulator is compensated and is stable. Voltage regulator stabilisation does not need the off-chip capacitor. In addition, a novel adaptive biasing frequency compensation method for low dropout voltage regulator is proposed in this paper. This method provides essential minimum current for compensation and reduces the quiescent current more effectively. The power receiver was designed in a 180-nm industrial CMOS technology, and the voltage range of the input is from 0.8 to 2 V, while the voltage range of the output is from 1.2 to 1.75 V, with a maximum load current of 10 mA, the unregulated efficiency of 79.2%, and the regulated efficiency of 64.4%.

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

Using Passive Two-Port Networks to Study the Forced Vibrations of Piezoceramic Transducers

NASA Astrophysics Data System (ADS)

Karlash, V. L.

2017-09-01

A generalization and subsequent development of experimental techniques, including methods of studying the phase-frequency relations between the measured components of admittance and instantaneous power are considered. The conditions of electric loading where electric currents, voltages, or instantaneous powers of constant amplitude in the piezoresonators are specified are numerically modeled. It is particularly established that the advanced Mason circuit with additional switch allows acquiring much more data on the forced vibrations of piezoceramic transducers than the classical circuit. The measured (at an arbitrary frequency) voltage drop across the piezoelement, its pull-up resistor, and at the input of the measuring circuit allow determining, with high accuracy, the current, conductivity, impedance, instantaneous power, and phase shifts when the amplitudes of electric current and voltage are given.

Application of active electrode compensation to perform continuous voltage-clamp recordings with sharp microelectrodes.

PubMed

Gómez-González, J F; Destexhe, A; Bal, T

2014-10-01

Electrophysiological recordings of single neurons in brain tissues are very common in neuroscience. Glass microelectrodes filled with an electrolyte are used to impale the cell membrane in order to record the membrane potential or to inject current. Their high resistance induces a high voltage drop when passing current and it is essential to correct the voltage measurements. In particular, for voltage clamping, the traditional alternatives are two-electrode voltage-clamp technique or discontinuous single electrode voltage-clamp (dSEVC). Nevertheless, it is generally difficult to impale two electrodes in a same neuron and the switching frequency is limited to low frequencies in the case of dSEVC. We present a novel fully computer-implemented alternative to perform continuous voltage-clamp recordings with a single sharp-electrode. To reach such voltage-clamp recordings, we combine an active electrode compensation algorithm (AEC) with a digital controller (AECVC). We applied two types of control-systems: a linear controller (proportional plus integrative controller) and a model-based controller (optimal control). We compared the performance of the two methods to dSEVC using a dynamic model cell and experiments in brain slices. The AECVC method provides an entirely digital method to perform continuous recording and smooth switching between voltage-clamp, current clamp or dynamic-clamp configurations without introducing artifacts.

A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

PubMed

Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

2012-08-01

We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

Measured radial dependence of the peak sheath voltages present in very high frequency capacitive discharges

DOE PAGES

Barnat, E. V.; Miller, P. A.; Hebner, G. A.; ...

2007-05-16

In this paper, the radial distribution of the measured voltage drop across a sheath formed between a 300mm electrode and an argon plasma discharge is shown to depend on the excitation radio frequency, under constant power and pressure conditions. At a lower frequency of 13.56MHz, the voltage drop across the sheath is uniform across the 300mm electrode, while at higher frequencies of 60 and 162MHz the voltage drop becomes radially nonuniform. Finally, the magnitude and spatial extent of the nonuniformity become greater with increasing frequency.

Power characteristics in GMAW: Experimental and numerical investigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joensson, P.G.; Szekely, J.; Madigan, R.B.

1995-03-01

The voltage and power distributions in gas metal arc welding (GMAW) were studied both experimentally and numerically. The principal voltage drop takes place in the arc, which also constitutes the dominant power contribution. Within the arc, the dominating voltage contributions are from the arc column and the cathode fall, while the anode fall and the electrode regions are less significant. The power input to the arc column increases with both increasing current and increasing arc length. These results indicate that it is critical to control the arc length in order to control the power input to the system.

Electric generation and ratcheted transport of contact-charged drops

NASA Astrophysics Data System (ADS)

Cartier, Charles A.; Graybill, Jason R.; Bishop, Kyle J. M.

2017-10-01

We describe a simple microfluidic system that enables the steady generation and efficient transport of aqueous drops using only a constant voltage input. Drop generation is achieved through an electrohydrodynamic dripping mechanism by which conductive drops grow and detach from a grounded nozzle in response to an electric field. The now-charged drops are transported down a ratcheted channel by contact charge electrophoresis powered by the same voltage input used for drop generation. We investigate how the drop size, generation frequency, and transport velocity depend on system parameters such as the liquid viscosity, interfacial tension, applied voltage, and channel dimensions. The observed trends are well explained by a series of scaling analyses that provide insight into the dominant physical mechanisms underlying drop generation and ratcheted transport. We identify the conditions necessary for achieving reliable operation and discuss the various modes of failure that can arise when these conditions are violated. Our results demonstrate that simple electric inputs can power increasingly complex droplet operations with potential opportunities for inexpensive and portable microfluidic systems.

Electric generation and ratcheted transport of contact-charged drops.

PubMed

Cartier, Charles A; Graybill, Jason R; Bishop, Kyle J M

2017-10-01

We describe a simple microfluidic system that enables the steady generation and efficient transport of aqueous drops using only a constant voltage input. Drop generation is achieved through an electrohydrodynamic dripping mechanism by which conductive drops grow and detach from a grounded nozzle in response to an electric field. The now-charged drops are transported down a ratcheted channel by contact charge electrophoresis powered by the same voltage input used for drop generation. We investigate how the drop size, generation frequency, and transport velocity depend on system parameters such as the liquid viscosity, interfacial tension, applied voltage, and channel dimensions. The observed trends are well explained by a series of scaling analyses that provide insight into the dominant physical mechanisms underlying drop generation and ratcheted transport. We identify the conditions necessary for achieving reliable operation and discuss the various modes of failure that can arise when these conditions are violated. Our results demonstrate that simple electric inputs can power increasingly complex droplet operations with potential opportunities for inexpensive and portable microfluidic systems.

Mapping the droplet transfer modes for an ER100S-1 GMAW electrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heald, P.R.; Madigan, R.B.; Siewert, T.A.

1994-02-01

Welds were made with a 1.2-mm-diameter AWS ER100S-1 electrode using Ar-2% O[sub 2] shielding gas to map the effects of contact-tube-to-work distance (13, 19 and 25 mm), current, voltage, and wire feed rate on metal transfer. The droplet transfer modes were identified for each map by both the sound of the arc and images from a laser back-lit high-speed video system. The modes were correlated to digital records of the voltage and current fluctuations. The maps contain detailed information on the spray transfer mode, including the boundaries of drop spray, streaming spray and rotating spray modes. The metal transfer modemore » boundaries shifted with an increase in contact-tube-to-work distance. Increasing the contact-tube-to-work distance from 13 to 19 mm resulted in a 15 mm/s increase in the wire feet rate for the globular-to-drop-spray transition.« less

Freja Studies of the Current-Voltage Relation in Substorm-Related Events

NASA Technical Reports Server (NTRS)

Olsson, A.; Andersson, Laila; Eriksson, A. I.; Clemmons, J.; Erlandsson, R. E.; Reeves, G.; Hughes, T.; Murphee, J. S.

2000-01-01

Field-aligned currents and electrostatic potentials play important roles in the coupling between the magnetosphere and the ionosphere. If one assumes that the ionosphere-magnetosphere potential difference is mainly due to the mirror force, one can use the single particle adiabatic kinetic theory to describe the system. From this theory, a linear relationship j(sub II) = KV between field-aligned current density j(sub II) and potential drop V along the same field line can be derived, provided that the potential drop is not too large and not too small. With rare exceptions, observational tests of this relation have mainly concentrated on quiet magnetospheric situations, with acceleration voltages V approx. less than 5 kV. Here we use observations from the Freja satellite of precipitating auroral electrons at 1.700 km altitude to study substorm related events, with acceleration voltages up to 20 keV. The observations are found to be consistent with a linear current-voltage relation even i n these conditions, although with values of the field aligned K lower than previously reported (1-5 x 10(exp 11 S/sq m). This can be explained by lower densities and higher characteristic electron energies in the magnetospheric source region of the precipitating electrons. We analyze the data by three different methods, which are all found to be in general agreement. The results are in agreement with a previous study, where the spectra of precipitating electrons --were indirectly inferred by inversion of data from the EISCAT incoherent scatter radar, thereby validating the use of radar data for studies of auroral electrons. Comparisons with previous studies are made, emphasizing the dependence of the results on the type of auroral structure and magnetospheric conditions.

Freja studies of the current-voltage relation in substorm-related events

NASA Astrophysics Data System (ADS)

Olsson, A.; Andersson, L.; Eriksson, A. I.; Clemmons, J.; Erlandsson, R. E.; Reeves, G.; Huges, T.; Murphee, J. S.

1998-03-01

Field-aligned currents and electrostatic potentials play important roles in the coupling between the magnetosphere and the ionosphere. If one assumes that the ionosphere-magnetosphere potential difference is mainly due to the mirror force, one can use the single particle adiabatic kinetic theory to describe the system. From this theory, a linear relationship j∥=KV between field-aligned current density j∥ and potential drop V along the same field line can be derived, provided that the potential drop is not too large and not too small. With rare exceptions, observational tests of this relation have mainly concentrated on quiet magnetospheric situations, with acceleration voltages V<~5kV. Here we use observations from the Freja satellite of precipitating auroral electrons at 1.700 km altitude to study substorm related events, with acceleration voltages up to 20 keV. The observations are found to be consistent with a linear current-voltage relation even in these conditions, although with values of the field aligned K lower than previously reported (1-5×10-11S/m2). This can be explained by lower densities and higher characteristic electron energies in the magnetospheric source region of the precipitating electrons. We analyze the data by three different methods, which are all found to be in general agreement. The results are in agreement with a previous study [Olsson et al., 1996 b], where the spectra of precipitating electrons were indirectly infered by inversion of data from the EISCAT incoherent scatter radar, thereby validating the use of radar data for studies of auroral electrons. Comparisons with previous studies are made, emphasizing the dependence of the results on the type of auroral structure and magnetospheric conditions.

Design and development of a low-cost biphasic charge-balanced functional electric stimulator and its clinical validation.

PubMed

Shendkar, Chandrashekhar; Lenka, Prasanna K; Biswas, Abhishek; Kumar, Ratnesh; Mahadevappa, Manjunatha

2015-10-01

Functional electric stimulators that produce near-ideal, charge-balanced biphasic stimulation waveforms with interphase delay are considered safer and more efficacious than conventional stimulators. An indigenously designed, low-cost, portable FES device named InStim is developed. It features a charge-balanced biphasic single channel. The authors present the complete design, mathematical analysis of the circuit and the clinical evaluation of the device. The developed circuit was tested on stroke patients affected by foot drop problems. It was tested both under laboratory conditions and in clinical settings. The key building blocks of this circuit are low dropout regulators, a DC-DC voltage booster and a single high-power current source OP-Amp with current-limiting capabilities. This allows the device to deliver high-voltage, constant current, biphasic pulses without the use of a bulky step-up transformer. The advantages of the proposed design over the currently existing devices include improved safety features (zero DC current, current-limiting mechanism and safe pulses), waveform morphology that causes less muscle fatigue, cost-effectiveness and compact power-efficient circuit design with minimal components. The device is also capable of producing appropriate ankle dorsiflexion in patients having foot drop problems of various Medical Research Council scale grades.

Investigations of the quality of hospital electric power supply and the tolerance of medical electric devices to voltage dips.

PubMed

Hanada, Eisuke; Itoga, Shuuya; Takano, Kyoko; Kudou, Takato

2007-06-01

Medical devices driven by electric power have come to be commonly used in hospitals, and rapid changes of voltage or current can easily cause them to fail. A stable and high quality power supply is indispensable in order to maintain safety in the modern clinical setting. Therefore, we investigated the quality of the power supply in a hospital and determined the tolerance of 13 pieces of medical equipment to voltage dips. The results showed little distortion of the voltage wave. However, we found an approximately 7% momentary voltage dip caused by lightening and other problems, such as 2 to 5% periodic drops in voltage and voltage wave distortions caused by incorrect grounding. In a tolerance test, the settings of some medical devices were changed at the time of automatic reboot after a disturbance. For another device, trend information was initialized.

11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

DTIC Science & Technology

2012-01-30

drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor

Hybrid Ag 2VO 2PO 4/CF x as a High Capacity and Energy Cathode for Primary Batteries

DOE PAGES

Li, Yue Ru; Bruck, Andrea M.; Brady, Alexander B.; ...

2017-08-18

In this report, we describe the electrochemistry of hybrid dual silver vanadium phosphorus oxide/carbon fluoride (Ag 2VO 2PO 4/CF x) cathodes with various weight ratios. Through modification of the Ag 2VO 2PO 4/CF x ratio, we can control the gravimetric and volumetric capacity, as well as mitigate the voltage drop during high current pulses. The increase in impedance caused by irreversible LiF formation in CFx was reduced by the silver reduction-displacement during electrochemical discharge of the Ag 2VO 2PO 4. Moreover, the addition of graphite was shown to reduce initial voltage delay. When Ag 2VO 2PO 4 dominates the electrodemore » mass (i.e. 75/25 Ag 2VO 2PO 4/CF x) in the hybrid cathode, pulse testing shows less voltage drop and delay, but at the expense of capacity and energy density. As the amount of CFx in the composite increases (i.e. Ag 2VO 2PO 4/CF x ratio of to 50/50 or 25/75), charge capacity and energy density increases, but at the expense of larger voltage drops and delays early in the discharge process. Thus, controlling the Ag 2VO 2PO 4/CF x ratio can be used to tune the electrochemical properties of the dual cathode, allowing for optimization of capacity and power depending on the application.« less

Hybrid Ag 2VO 2PO 4/CF x as a High Capacity and Energy Cathode for Primary Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yue Ru; Bruck, Andrea M.; Brady, Alexander B.

In this report, we describe the electrochemistry of hybrid dual silver vanadium phosphorus oxide/carbon fluoride (Ag 2VO 2PO 4/CF x) cathodes with various weight ratios. Through modification of the Ag 2VO 2PO 4/CF x ratio, we can control the gravimetric and volumetric capacity, as well as mitigate the voltage drop during high current pulses. The increase in impedance caused by irreversible LiF formation in CFx was reduced by the silver reduction-displacement during electrochemical discharge of the Ag 2VO 2PO 4. Moreover, the addition of graphite was shown to reduce initial voltage delay. When Ag 2VO 2PO 4 dominates the electrodemore » mass (i.e. 75/25 Ag 2VO 2PO 4/CF x) in the hybrid cathode, pulse testing shows less voltage drop and delay, but at the expense of capacity and energy density. As the amount of CFx in the composite increases (i.e. Ag 2VO 2PO 4/CF x ratio of to 50/50 or 25/75), charge capacity and energy density increases, but at the expense of larger voltage drops and delays early in the discharge process. Thus, controlling the Ag 2VO 2PO 4/CF x ratio can be used to tune the electrochemical properties of the dual cathode, allowing for optimization of capacity and power depending on the application.« less

Dynamic response characteristics analysis of the doubly-fed wind power system under grid voltage drop

NASA Astrophysics Data System (ADS)

Chen, Y.; Wang, J.; Wang, H. H.; Yang, L.; Chen, W.; Xu, Y. T.

2016-08-01

Double-fed induction generator (DFIG) is sensitive to the disturbances of grid, so the security and stability of the grid and the DFIG itself are under threat with the rapid increase of DFIG. Therefore, it is important to study dynamic response of the DFIG when voltage drop failure is happened in power system. In this paper, firstly, mathematical models and the control strategy about mechanical and electrical response processes is respectively introduced. Then through the analysis of response process, it is concluded that the dynamic response characteristics are related to voltage drop level, operating status of DFIG and control strategy adapted to rotor side. Last, the correctness of conclusion is validated by the simulation about mechanical and electrical response processes in different voltage levels drop and different DFIG output levels under DIgSILENT/PowerFactory software platform.

Charge Characteristics of Rechargeable Batteries

NASA Astrophysics Data System (ADS)

Maheswaranathan, Ponn; Kelly, Cormac

2014-03-01

Rechargeable batteries play important role in technologies today and they are critical for the future. They are used in many electronic devices and their capabilities need to keep up with the accelerated pace of technology. Efficient energy capture and storage is necessary for the future rechargeable batteries. Charging and discharging characteristics of three popular commercially available re-chargeable batteries (NiCd, NiMH, and Li Ion) are investigated and compared with regular alkaline batteries. Pasco's 850 interface and their voltage & current sensors are used to monitor the current through and the potential difference across the battery. The discharge current and voltage stayed fairly constant until the end, with a slightly larger drop in voltage than current, which is more pronounced in the alkaline batteries. After 25 charge/discharge cycling there is no appreciable loss of charge capacities in the Li Ion battery. Energy densities, cycle characteristics, and memory effects will also be presented. Sponsored by the South Carolina Governor's school for Science and Mathematics under the Summer Program for Research Interns program.

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

NASA Astrophysics Data System (ADS)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Influence of the electrode gap separation on the pseudospark-sourced electron beam generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, J., E-mail: junping.zhao@qq.com; State Key Laboratory of Electrical Insulation and Power Equipment, West Xianning Road, Xi'an 710049; Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG Scotland

Pseudospark-sourced electron beam is a self-focused intense electron beam which can propagate without any external focusing magnetic field. This electron beam can drive a beam-wave interaction directly or after being post-accelerated. It is especially suitable for terahertz radiation generation due to the ability of a pseudospark discharge to produce small size in the micron range and very high current density and bright electron beams. In this paper, a single-gap pseudospark discharge chamber has been built and tested with several electrode gap separations to explore the dependence of the pseudospark-sourced electron beam current on the discharge voltage and the electrode gapmore » separation. Experimental results show that the beam pulses have similar pulse width and delay time from the distinct drop of the applied voltage for smaller electrode gap separations but longer delay time for the largest gap separation used in the experiment. It has been found that the electron beam only starts to occur when the charging voltage is above a certain value, which is defined as the starting voltage of the electron beam. The starting voltage is different for different electrode gap separations and decreases with increasing electrode gap separation in our pseudospark discharge configuration. The electron beam current increases with the increasing discharge voltage following two tendencies. Under the same discharge voltage, the configuration with the larger electrode gap separation will generate higher electron beam current. When the discharge voltage is higher than 10 kV, the beam current generated at the electrode gap separation of 17.0 mm, is much higher than that generated at smaller gap separations. The ionization of the neutral gas in the main gap is inferred to contribute more to the current increase with increasing electrode gap separation.« less

Electrowetting-driven spreading and jumping of drops in oil

NASA Astrophysics Data System (ADS)

Hong, Jiwoo; Lee, Sang Joon

2013-11-01

Electrowetting-based practical applications include digital microfluidics, liquid lenses, and reflective displays. Most of them are performed in water/oil system, because oil medium reduces the contact-angle hysteresis and prevents drop evaporation. In this study, the effects of drop volume, oil viscosity, and applied voltage on the dynamic behaviors of spreading drops, such as transition of spreading pattern and response time, are investigated. Interestingly, jumping phenomena of drops are observed in oil when the applied voltage is turned off after reaching the electrowetted equilibrium radius of drops. A numerical model to predict the transient behavior of jumping drops is formulated based on the phase-field method. The numerical results for the transient deformation of jumping drops show quantitative agreement with the experimental results.

IR-drop analysis for validating power grids and standard cell architectures in sub-10nm node designs

NASA Astrophysics Data System (ADS)

Ban, Yongchan; Wang, Chenchen; Zeng, Jia; Kye, Jongwook

2017-03-01

Since chip performance and power are highly dependent on the operating voltage, the robust power distribution network (PDN) is of utmost importance in designs to provide with the reliable voltage without voltage (IR)-drop. However, rapid increase of parasitic resistance and capacitance (RC) in interconnects makes IR-drop much worse with technology scaling. This paper shows various IR-drop analyses in sub 10nm designs. The major objectives are to validate standard cell architectures, where different sizes of power/ground and metal tracks are validated, and to validate PDN architecture, where types of power hook-up approaches are evaluated with IR-drop calculation. To estimate IR-drops in 10nm and below technologies, we first prepare physically routed designs given standard cell libraries, where we use open RISC RTL, synthesize the CPU, and apply placement & routing with process-design kits (PDK). Then, static and dynamic IR-drop flows are set up with commercial tools. Using the IR-drop flow, we compare standard cell architectures, and analysis impacts on performance, power, and area (PPA) with the previous technology-node designs. With this IR-drop flow, we can optimize the best PDN structure against IR-drops as well as types of standard cell library.

Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

NASA Astrophysics Data System (ADS)

Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

2007-10-01

In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

NASA Astrophysics Data System (ADS)

Ma, Jun; Matioli, Elison

2018-01-01

This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD. Such architecture led to an ultra-low IR of 51 ± 5.9 nA/mm at -1000 V, in addition to a small turn-on voltage (VON) of 0.61 ± 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (VBR) of -2000 V at 1 μA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the IR and increases the VBR without sacrificing the VON, which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

Electrophoretic deposition (EPD): Mechanisms, kinetics, and application to ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarkar, P.; Nicholson, P.S.

1996-08-01

The mechanisms of electrophoretic deposition (EPD) are discussed and their shortcomings identified. The kinetics of the processes involved are analyzed for constant-current and constant-voltage conditions. A method of determining the Hamaker constant of suspended particles is developed by modeling the relationship between the particle interaction energy and the suspension stability. A three-probe dc technique is used to map the voltage profile around the depositing electrode, and the results are used to explain discrepancies between the calculated and experimentally observed voltage drops during deposition. A mechanism of deposition is proposed based on DLVO theory and particle double-layer distortion/thinning on application ofmore » a dc field to the suspension. Kinetic equations are developed for constant-current and constant-voltage EPD using mass balance conditions; these are verified by experiments. After the phenomenon is introduced and discussed, a critique of the application of EPD to the synthesis of ceramic shapes and coatings is given.« less

Investigation on emission characteristics of metal-ceramic cathode applied to industrial X-ray diode.

PubMed

Xun, Ma; Jianqiang, Yuan; Hongwei, Liu; Hongtao, Li; Lingyun, Wang; Ping, Jiang

2016-06-01

The industrial x-ray diode with high impedance configuration is usually adopted to generate repetitive x-ray, but its performance would be worsened due to lower electric field on the cathode of diode when a voltage of several hundreds of kV is applied. To improve its performance, a novel metal-ceramic cathode is proposed in this paper. Key factors (width, relative permittivity of ceramic, and so on) affecting electric field distribution on triple points are analyzed by electrostatic field calculation program, so as to optimize the design of this novel cathode. Experiments are done to study the characteristics including emission current of cathode, diode voltage duration, diode mean dynamic impedance, and diode impedance drop velocity within diode power duration. The results show that metal-ceramic cathode could improve diode performance by enhancing emission current and stabling impedance; the impedance drop velocity of diode with spoke-shaped metal-ceramic cathode was reduced to -5 Ω ns(-1) within diode power duration, comparing to -15 Ω ns(-1) with metal foil cathode.

Current Flow and Pair Creation at Low Altitude in Rotation-Powered Pulsars' Force-Free Magnetospheres: Space Charge Limited Flow

NASA Technical Reports Server (NTRS)

Timokhin, A. N.; Arons, J.

2013-01-01

We report the results of an investigation of particle acceleration and electron-positron plasma generation at low altitude in the polar magnetic flux tubes of rotation-powered pulsars, when the stellar surface is free to emit whatever charges and currents are demanded by the force-free magnetosphere. We apply a new 1D hybrid plasma simulation code to the dynamical problem, using Particle-in-Cell methods for the dynamics of the charged particles, including a determination of the collective electrostatic fluctuations in the plasma, combined with a Monte Carlo treatment of the high-energy gamma-rays that mediate the formation of the electron-positron pairs.We assume the electric current flowing through the pair creation zone is fixed by the much higher inductance magnetosphere, and adopt the results of force-free magnetosphere models to provide the currents which must be carried by the accelerator. The models are spatially one dimensional, and designed to explore the physics, although of practical relevance to young, high-voltage pulsars. We observe novel behaviour (a) When the current density j is less than the Goldreich-Julian value (0 < j/j(sub GJ) < 1), space charge limited acceleration of the current carrying beam is mild, with the full Goldreich-Julian charge density comprising the charge densities of the beam and a cloud of electrically trapped particles with the same sign of charge as the beam. The voltage drops are of the order of mc(sup 2)/e, and pair creation is absent. (b) When the current density exceeds the Goldreich-Julian value (j/j(sub GJ) > 1), the system develops high voltage drops (TV or greater), causing emission of curvature gamma-rays and intense bursts of pair creation. The bursts exhibit limit cycle behaviour, with characteristic time-scales somewhat longer than the relativistic fly-by time over distances comparable to the polar cap diameter (microseconds). (c) In return current regions, where j/j(sub GJ) < 0, the system develops similar bursts of pair creation. These discharges are similar to those encountered in previous calculations by Timokhin of pair creation when the surface has a high work function and cannot freely emit charge. In cases (b) and (c), the intermittently generated pairs allow the system to simultaneously carry the magnetospherically prescribed currents and adjust the charge density and average electric field to force-free conditions. We also elucidate the conditions for pair creating beam flow to be steady (stationary with small fluctuations in the rotating frame), finding that such steady flows can occupy only a small fraction of the current density parameter space exhibited by the force-free magnetospheric model. The generic polar flow dynamics and pair creation are strongly time dependent. The model has an essential difference from almost all previous quantitative studies, in that we sought the accelerating voltage (with pair creation, when the voltage drops are sufficiently large; without, when they are small) as a function of the applied current.

Nanoscale electron transport at the surface of a topological insulator.

PubMed

Bauer, Sebastian; Bobisch, Christian A

2016-04-21

The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

Nanoscale electron transport at the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Bauer, Sebastian; Bobisch, Christian A.

2016-04-01

The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

Current Flow in the Bubble and Stripe Phases

NASA Astrophysics Data System (ADS)

Friess, B.; Umansky, V.; von Klitzing, K.; Smet, J. H.

2018-03-01

The spontaneous ordering of spins and charges in geometric patterns is currently under scrutiny in a number of different material systems. A topic of particular interest is the interaction of such ordered phases with itinerant electrons driven by an externally imposed current. It not only provides important information on the charge ordering itself but potentially also allows manipulating the shape and symmetry of the underlying pattern if current flow is strong enough. Unfortunately, conventional transport methods probing the macroscopic resistance suffer from the fact that the voltage drop along the sample edges provides only indirect information on the bulk properties because a complex current distribution is elicited by the inhomogeneous ground state. Here, we promote the use of surface acoustic waves to study these broken-symmetry phases and specifically address the bubble and stripe phases emerging in high-quality two-dimensional electron systems in GaAs /AlGaAs heterostructures as prototypical examples. When driving a unidirectional current, we find a surprising discrepancy between the sound propagation probing the bulk of the sample and the voltage drop along the sample edges. Our results prove that the current-induced modifications observed in resistive transport measurements are in fact a local phenomenon only, leaving the majority of the sample unaltered. More generally, our findings shed new light on the extent to which these ordered electron phases are impacted by an external current and underline the intrinsic advantages of acoustic measurements for the study of such inhomogeneous phases.

Drop short control of electrode gap

DOEpatents

Fisher, Robert W.; Maroone, James P.; Tipping, Donald W.; Zanner, Frank J.

1986-01-01

During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

HOLLOTRON switch for megawatt lightweight space inverters

NASA Technical Reports Server (NTRS)

Poeschel, R. L.; Goebel, D. M.; Schumacher, R. W.

1991-01-01

The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

Low pressure switches and magnetic switches were tested as possible replacements for the high pressure switches currently used on Experimental Test Accelerator and Advanced Test Accelerator. When the low pressure switch is used with a low impedance transmission line, runaway electrons form a pinched electron beam which damages the anode. The use of the low pressure switch as the first switch in the pulsed power chain was tested; i.e., the switch would be used to connect a charged capacitor across the primary winding of a step up transformer. An inductor with a saturating core is connected in series so that, initially, there is a large inductive voltage drop. As a result, there is small voltage across the switch. By the time the inductor core saturates, the switch has developed sufficient ionization so that the switch voltage remains small, even with peak current, and an electron beam is not produced.

Apparatus including a plurality of spaced transformers for locating short circuits in cables

NASA Technical Reports Server (NTRS)

Cason, R. L.; Mcstay, J. J. (Inventor)

1978-01-01

A cable fault locator is described for sensing faults such as short circuits in power cables. The apparatus includes a plurality of current transformers strategically located along a cable. Trigger circuits are connected to each of the current transformers for placing a resistor in series with a resistive element responsive to an abnormally high current flowing through that portion of the cable. By measuring the voltage drop across the resistive element, the location of the fault can be determined.

Applicability of the Child-Langmuir laws versions for describing the glow discharge cathode sheath in CO2

NASA Astrophysics Data System (ADS)

Lisovskiy, Valeriy; Krol, Hennadii; Osmayev, Ruslan; Yegorenkov, Vladimir

2016-09-01

This work is devoted to the determination of the law that may be applicable to the description of the cathode sheath in CO2. To this end three versions of the Child-Langmuir law have been considered - a collision free one (for the ions moving through a cathode sheath without collisions with gas molecules) as well as two collision- related versions- one for a constant mean free path of positive ions and one for a constant mobility of positive ions. The current-voltage characteristics and the cathode sheath thickness of the glow discharge in carbon oxide have been simultaneously measured in the pressure range from 0.05 to 1 Torr and with the discharge current values up to 80 mA. The inter-electrode distance has been chosen such that the discharge consists only of the cathode sheath and a small portion of the negative glow, i.e. the experiments have been performed in short tubes. In this case the voltage drop across the cathode sheath is equal approximately to the voltage drop across the electrodes. In the whole range of the discharge conditions we have studied the cathode sheath characteristics are found to obey correctly only to the Child-Langmuir law version with a constant ion mobility. The reason for this phenomenon may be related with a significant conversion of carbon dioxide molecules.

Virtual welding equipment for simulation of GMAW processes with integration of power source regulation

NASA Astrophysics Data System (ADS)

Reisgen, Uwe; Schleser, Markus; Mokrov, Oleg; Zabirov, Alexander

2011-06-01

A two dimensional transient numerical analysis and computational module for simulation of electrical and thermal characteristics during electrode melting and metal transfer involved in Gas-Metal-Arc-Welding (GMAW) processes is presented. Solution of non-linear transient heat transfer equation is carried out using a control volume finite difference technique. The computational module also includes controlling and regulation algorithms of industrial welding power sources. The simulation results are the current and voltage waveforms, mean voltage drops at different parts of circuit, total electric power, cathode, anode and arc powers and arc length. We describe application of the model for normal process (constant voltage) and for pulsed processes with U/I and I/I-modulation modes. The comparisons with experimental waveforms of current and voltage show that the model predicts current, voltage and electric power with a high accuracy. The model is used in simulation package SimWeld for calculation of heat flux into the work-piece and the weld seam formation. From the calculated heat flux and weld pool sizes, an equivalent volumetric heat source according to Goldak model, can be generated. The method was implemented and investigated with the simulation software SimWeld developed by the ISF at RWTH Aachen University.

Regulation of the Output Voltage of an Inverter in Case of Load Variation

NASA Astrophysics Data System (ADS)

Diouri, Omar; Errahimi, Fatima; Es-Sbai, Najia

2018-05-01

In a DC/AC photovoltaic application, the stability of the output voltage of the inverter plays a very important role in the electrical systems. Such a photovoltaic system is constituted by an inverter, which makes it possible to convert the continuous energy to the alternative energy used in systems which operate under a voltage of 230V. The output of this inverter can be connected to a single load or more, at which time a second load is added in parallel with the first load. In this case, it proves a voltage drop at the output of the inverter. This problem influences the proper functioning of the electrical loads. Therefore, our contribution is to give a solution to this by compensating this voltage drop using a boost converter at the input of the inverter. This boost converter will play the role of the compensator that will provide the necessary voltage to the inverter in order to increase the voltage across the loads. But the use of this boost without controlling it is not enough because it generates a voltage that depends on the duty cycle of the control signal. To stabilize the output voltage of the inverter, we used a Proportional, Integral, and Derivative control (PID), which makes it possible to generate the necessary control signal for the voltage boost in order to have a good regulation of the output voltage of the inverter. Finally, we have solved the problem of the voltage drop even though there is loads variation.

Method and apparatus for controlling electrode gap during vacuum consumable arc remelting

DOEpatents

Fisher, R.W.; Maroone, J.P.; Tipping, D.W.; Zanner, F.J.

During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

Ultraviolet Rayleigh Scatter Imaging for Spatial Temperature Profiles in Atmospheric Microdischarges

DTIC Science & Technology

2014-09-01

regime and not in a neighboring regime such as an abnormal glow or a corona discharge . As discussed in section 3.1, unlike abnormal discharges or... coronas , normal glows have a voltage drop that is independent of discharge current for several orders of magnitude, which would manifest itself...5 3.2 Discharge Power and Gas Temperature

A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

PubMed

Yan Lu; Wing-Hung Ki

2014-06-01

A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Electron transport in Bi2Se3 ultra thin films

NASA Astrophysics Data System (ADS)

Bauer, Sebastian; Bernhart, Alexander M.; Bobisch, Christian A.

2018-02-01

We studied the electronic transport properties of a 4 QL thin Bi2Se3 film in the hybridized phase on Si(111) by scanning tunneling potentiometry. When a transverse voltage is applied, the film exhibits a homogeneous electric field on the nm scale. In addition, thermovoltage signals with lateral nm variations are found which result from sample heating by the transverse current. The thermovoltage signals are directly correlated to morphological structures on the surface, i.e. step edges, and indicate a lateral variation of the local density of states at the Bi2Se3 surface. No discernible voltage drops appear at the surface so that the whole film serves as a current carrying medium and scattering at surface defects is less important.

Integrating a Silicon Solar Cell with a Triboelectric Nanogenerator via a Mutual Electrode for Harvesting Energy from Sunlight and Raindrops.

PubMed

Liu, Yuqiang; Sun, Na; Liu, Jiawei; Wen, Zhen; Sun, Xuhui; Lee, Shuit-Tong; Sun, Baoquan

2018-03-27

Solar cells, as promising devices for converting light into electricity, have a dramatically reduced performance on rainy days. Here, an energy harvesting structure that integrates a solar cell and a triboelectric nanogenerator (TENG) device is built to realize power generation from both sunlight and raindrops. A heterojunction silicon (Si) solar cell is integrated with a TENG by a mutual electrode of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film. Regarding the solar cell, imprinted PEDOT:PSS is used to reduce light reflection, which leads to an enhanced short-circuit current density. A single-electrode-mode water-drop TENG on the solar cell is built by combining imprinted polydimethylsiloxane (PDMS) as a triboelectric material combined with a PEDOT:PSS layer as an electrode. The increasing contact area between the imprinted PDMS and water drops greatly improves the output of the TENG with a peak short-circuit current of ∼33.0 nA and a peak open-circuit voltage of ∼2.14 V, respectively. The hybrid energy harvesting system integrated electrode configuration can combine the advantages of high current level of a solar cell and high voltage of a TENG device, promising an efficient approach to collect energy from the environment in different weather conditions.

2D particle-in-cell simulation of the entire process of surface flashover on insulator in vacuum

NASA Astrophysics Data System (ADS)

Wang, Hongguang; Zhang, Jianwei; Li, Yongdong; Lin, Shu; Zhong, Pengfeng; Liu, Chunliang

2018-04-01

With the introduction of an external circuit model and a gas desorption model, the surface flashover on the plane insulator-vacuum interface perpendicular to parallel electrodes is simulated by a Particle-In-Cell method. It can be seen from simulations that when the secondary electron emission avalanche (SEEA) occurs, the current sharply increases because of the influence of the insulator surface charge on the cathode field emission. With the introduction of the gas desorption model, the current keeps on increasing after SEEA, and then the feedback of the external circuit causes the voltage between the two electrodes to decrease. The cathode emission current decreases, while the anode current keeps growing. With the definition that flashover occurs when the diode voltage drops by more than 20%, we obtained the simulated flashover voltage which agrees with the experimental value with the use of the field enhancement factor β = 145 and the gas molecule desorption coefficient γ=0.25 . From the simulation results, we can also see that the time delay of flashover decreases exponentially with voltage. In addition, from the gas desorption model, the gas density on the insulator surface is found to be proportional to the square of the gas desorption rate and linear with time.

Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

2017-11-01

The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

2003-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Gate field plate IGBT with trench accumulation layer for extreme injection enhancement

NASA Astrophysics Data System (ADS)

Xu, Xiaorui; Chen, Wanjun; Liu, Chao; Chen, Nan; Tao, Hong; Shi, Yijun; Ma, Yinchang; Zhou, Qi; Zhang, Bo

2017-04-01

A gate field plate IGBT (GFP-IGBT) with extreme injection enhancement is proposed and verified using TCAD simulations. The GFP-IGBT features a gate field plate (GFP) inserted into n-drift region directly and a tiny P-base region separated from the GFP. In the ON-state, the accumulation layer is formed near to not only the bottom but also the side of the trench, which enhances electron injection efficiency. And the tiny P-base region reduces the holes extracted by reverse-biased P-base/N-drift junction. Both the GFP and tiny P-base contribute to achieving extreme injection enhancement, leading to a low forward voltage drop. In the OFF-state, due to the low stored charges in N-buffer layer, GFP-IGBT shows a short current fall time, leading to a decrease of turn-off loss. The simulation results show that, compared with the conventional IGBT, the GFP-IGBT offers a forward voltage drop reduction of 25% or current fall time reduction of 89% (i.e. turn-off loss reduction of 53%), resulting in low power loss. The excellent device performance, coupled with a commercial IGBT-compatible fabrication process, makes the proposed GFP-IGBT a promising candidate for power switching applications.

Mitigation of commutation failures in LCC-HVDC systems based on superconducting fault current limiters

NASA Astrophysics Data System (ADS)

Lee, Jong-Geon; Khan, Umer Amir; Lee, Ho-Yun; Lim, Sung-Woo; Lee, Bang-Wook

2016-11-01

Commutation failure in line commutated converter based HVDC systems cause severe damages on the entire power grid system. For LCC-HVDC, thyristor valves are turned on by a firing signal but turn off control is governed by the external applied AC voltage from surrounding network. When the fault occurs in AC system, turn-off control of thyristor valves is unavailable due to the voltage collapse of point of common coupling (PCC), which causes the commutation failure in LCC-HVDC link. Due to the commutation failure, the power transfer interruption, dc voltage drop and severe voltage fluctuation in the AC system could be occurred. In a severe situation, it might cause the protection system to block the valves. In this paper, as a solution to prevent the voltage collapse on PCC and to limit the fault current, the application study of resistive superconducting fault current limiter (SFCL) on LCC-HVDC grid system was performed with mathematical and simulation analyses. The simulation model was designed by Matlab/Simulink considering Haenam-Jeju HVDC power grid in Korea which includes conventional AC system and onshore wind farm and resistive SFCL model. From the result, it was observed that the application of SFCL on LCC-HVDC system is an effective solution to mitigate the commutation failure. And then the process to determine optimum quench resistance of SFCL which enables the recovery of commutation failure was deeply investigated.

AlGaInP light-emitting diodes with SACNTs as current-spreading layer

PubMed Central

2014-01-01

Transparent conductive current-spreading layer is important for quantum efficiency and thermal performance of light-emitting diodes (LEDs). The increasing demand for tin-doped indium oxide (ITO) caused the price to greatly increase. Super-aligned carbon nanotubes (SACNTs) and Au-coated SACNTs as current-spreading layer were applied on AlGaInP LEDs. The LEDs with Au-coated SACNTs showed good current spreading effect. The voltage bias at 20 mA dropped about 0.15 V, and the optical power increased about 10% compared with the LEDs without SACNTs. PMID:24712527

Diminiode thermionic conversion with 111-iridium electrodes

NASA Technical Reports Server (NTRS)

Koeger, E. W.; Bair, V. L.; Morris, J. F.

1976-01-01

Preliminary data indicating thermionic-conversion potentialities for a 111-iridium emitter and collector spaced 0.2 mm apart are presented. These results comprise output densities of current and of power as functions of voltage for three sets of emitter, collector, and reservoir temperatures: 1553, 944, 561 K; 1605, 898, 533 K; and 1656, 1028, 586 K. For the 1605 K evaluation, estimates produced work-function values of 2.22 eV for the emitter and 1.63 eV for the collector with a 2.0-eV barrier index (collector work function plus interelectrode voltage drop) corresponding to the maximum output of 5.5 W/sq cm at 0.24 volt. The current, voltage curve for the 1656 K 111-iridium diminiode yields a 6.2 W/sq cm maximum at 0.25 volt and is comparable with the 1700 K envelope for a diode with an etched-rhenium emitter and a 0.025-mm electrode gap made by TECO and evaluated by NASA.

Junction barrier Schottky rectifier with an improved P-well region

NASA Astrophysics Data System (ADS)

Wang, Ying; Li, Ting; Cao, Fei; Shao, Lei; Chen, Yu-Xian

2012-12-01

A junction barrier Schottky (JBS) rectifier with an improved P-well on 4H—SiC is proposed to improve the VF—IR trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10-8 times that of the common JBS rectifier at no expense of the forward voltage drop. This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P+ grid, resulting in a lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV, that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier, the figure of merit (FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge (ESD) in the human body model (HBM) circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier.

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

PubMed

Kim, Yu Jin; Park, Hyeon Woo; Hyun, Seung Dam; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Moon, Taehwan; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

2017-12-13

Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially eye-catching. This finding was claimed to be direct evidence that the FE capacitor is in negative capacitance (NC) state, which must be useful for (infinitely) high capacitance and ultralow voltage operation of field-effect transistors. Nonetheless, the NC state corresponds to the maximum energy state of the FE material, so it has been widely accepted in the community that the material alleviates that state by forming ferroelectric domains. This work reports a similar V-drop effect from the 150 nm thick epitaxial BaTiO 3 ferroelectric thin film, but the interpretation was completely disparate; the V-drop can be precisely simulated by the reverse domain nucleation and propagation of which charge effect cannot be fully compensated for by the supplied charge from the external charge source. The disappearance of the V-drop effect was also observed by repeated FE switching only up to 10 cycles, which can hardly be explained by the involvement of the NC effect. The retained reverse domain nuclei even after the subsequent poling can explain such behavior.

Power supply

DOEpatents

Yakymyshyn, Christopher Paul; Hamilton, Pamela Jane; Brubaker, Michael Allen

2007-12-04

A modular, low weight impedance dropping power supply with battery backup is disclosed that can be connected to a high voltage AC source and provide electrical power at a lower voltage. The design can be scaled over a wide range of input voltages and over a wide range of output voltages and delivered power.

Voltage Drop Compensation Method for Active Matrix Organic Light Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Choi, Sang-moo; Ryu, Do-hyung; Kim, Keum-nam; Choi, Jae-beom; Kim, Byung-hee; Berkeley, Brian

2011-03-01

In this paper, the conventional voltage drop compensation methods are reviewed and the novel design and driving scheme, the advanced power de-coupled (aPDC) driving method, is proposed to effectively compensate the voltage IR drop of active matrix light emitting diode (AMOLED) displays. The advanced PDC driving scheme can be applied to general AMOLED pixel circuits that have been developed with only minor modification or without requiring modification in pixel circuit. A 14-in. AMOLED panel with the aPDC driving scheme was fabricated. Long range uniformity (LRU) of the 14-in. AMOLED panel was improved from 43% without the aPDC driving scheme, to over 87% at the same brightness by using the scheme and the layout complexity of the panel with new design scheme is less than that of the panel with the conventional design scheme.

A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V.

Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not themore » voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.« less

Electro-hydrodynamic printing of drugs onto edible substrates

NASA Astrophysics Data System (ADS)

Shen, Yueyang; Elele, Ezinwa; Palle, Prashanth; Khusid, Boris; Basaran, Osman; McGough, Patrick T.; Collins, Robert T.

2009-11-01

While most existing drugs are manufactured as tablets using powder processing techniques, there is growing interest in printing drops containing pharmaceutical actives on edible substrates. We have developed a drop-on-demand (DOD) printing method appropriate for either replacing existing manufacturing platforms or enabling personalized medicine that overcomes the various critical challenges facing current DOD technologies. To eliminate adverse effects of electro-chemical reactions at the fluid-electrode interface, the fluid is infused into an electrically insulating nozzle to form a pendant drop that serves as a floating electrode capacitively coupled to external electrodes. A liquid bridge is formed and broken as the voltage applied at the electrode is varied in time. This gentle method for drop deposition has been demonstrated to operate with fluids spanning over three orders of magnitude in viscosity and conductivity. The proposed method has the potential for the evolving field of pharmaceutical and biomedical applications requiring the deposition of fluids at the exact locations with high volume accuracy.

Design and test of current limiting modules using YBCO-coated conductors

NASA Astrophysics Data System (ADS)

Schmidt, W.; Gamble, B.; Kraemer, H.-P.; Madura, D.; Otto, A.; Romanosky, W.

2010-01-01

Within the cooperation between American Superconductor Corporation (AMSC) and Siemens Corporate Technology we have investigated the fault current limiting performance of YBCO-coated conductors (also called second-generation or 2G HTS wires) stabilized with stainless steel laminates. Design rules for the length and width of the wire depending on utility grid requirements have been established. Bifilar coils have been manufactured and tested with a typical limitation period of 50 ms under stepwise increasing voltage loads to determine the maximum temperature the wires can withstand without degradation. Coils have been assembled into limiter modules demonstrating uniform tripping of the individual coils and recovery within seconds. At present this cooperation is proceeding within a joint project funded by the US Department of Energy (DOE) that encompasses the design, construction and testing of a 115 kV FCL for power transmission within a time frame of 4-5 years, and additional partners. Besides AMSC and Siemens, Nexans contributes the high voltage terminations and Los Alamos National Lab investigates the ac losses. Installation and testing are planned for a Southern California Edison substation. The module planned for the transmission voltage application consists of 63 horizontally arranged coils connected in parallel and series to account for a rated current of 1.2 kArms and voltage of 31 kVrms plus margins. The rated voltage of the module is considerably lower than the line to ground voltage in the 115 kV grid owing to our shunted limiter concept. The shunt reactor connected in parallel to the module outside the cryostat allows for adjustment of the limited current and reduces voltage drop across the module in case of a fault. The fault current reduction ratio is 42% for our present design. A subscale module comprising six full-size coils has been assembled and tested recently to validate the coil performance and coil winding technique. The module had a critical current of 425 ADC and a nominal power of 2.52 MV A at 77 K. A complete series of tests with applied voltage up to 8.4 kVrms, prospective short circuit current up to 26.6 kArms and variation of phase angle at initiation of the fault has been performed. After more than 40 switching tests the critical current of the module remained unchanged, indicating that no degradation of the wire occurred.

Novel non-equilibrium modelling of a DC electric arc in argon

NASA Astrophysics Data System (ADS)

Baeva, M.; Benilov, M. S.; Almeida, N. A.; Uhrlandt, D.

2016-06-01

A novel non-equilibrium model has been developed to describe the interplay of heat and mass transfer and electric and magnetic fields in a DC electric arc. A complete diffusion treatment of particle fluxes, a generalized form of Ohm’s law, and numerical matching of the arc plasma with the space-charge sheaths adjacent to the electrodes are applied to analyze in detail the plasma parameters and the phenomena occurring in the plasma column and the near-electrode regions of a DC arc generated in atmospheric pressure argon for current levels from 20 A up to 200 A. Results comprising electric field and potential, current density, heating of the electrodes, and effects of thermal and chemical non-equilibrium are presented and discussed. The current-voltage characteristic obtained is in fair agreement with known experimental data. It indicates a minimum for arc current of about 80 A. For all current levels, a field reversal in front of the anode accompanied by a voltage drop of (0.7-2.6) V is observed. Another field reversal is observed near the cathode for arc currents below 80 A.

Current flow and pair creation at low altitude in rotation-powered pulsars' force-free magnetospheres: space charge limited flow

NASA Astrophysics Data System (ADS)

Timokhin, A. N.; Arons, J.

2013-02-01

We report the results of an investigation of particle acceleration and electron-positron plasma generation at low altitude in the polar magnetic flux tubes of rotation-powered pulsars, when the stellar surface is free to emit whatever charges and currents are demanded by the force-free magnetosphere. We apply a new 1D hybrid plasma simulation code to the dynamical problem, using Particle-in-Cell methods for the dynamics of the charged particles, including a determination of the collective electrostatic fluctuations in the plasma, combined with a Monte Carlo treatment of the high-energy gamma-rays that mediate the formation of the electron-positron pairs. We assume the electric current flowing through the pair creation zone is fixed by the much higher inductance magnetosphere, and adopt the results of force-free magnetosphere models to provide the currents which must be carried by the accelerator. The models are spatially one dimensional, and designed to explore the physics, although of practical relevance to young, high-voltage pulsars. We observe novel behaviour (a) When the current density j is less than the Goldreich-Julian value (0 < j/jGJ < 1), space charge limited acceleration of the current carrying beam is mild, with the full Goldreich-Julian charge density comprising the charge densities of the beam and a cloud of electrically trapped particles with the same sign of charge as the beam. The voltage drops are of the order of mc2/e, and pair creation is absent. (b) When the current density exceeds the Goldreich-Julian value (j/jGJ > 1), the system develops high voltage drops (TV or greater), causing emission of curvature gamma-rays and intense bursts of pair creation. The bursts exhibit limit cycle behaviour, with characteristic time-scales somewhat longer than the relativistic fly-by time over distances comparable to the polar cap diameter (microseconds). (c) In return current regions, where j/jGJ < 0, the system develops similar bursts of pair creation. These discharges are similar to those encountered in previous calculations by Timokhin of pair creation when the surface has a high work function and cannot freely emit charge. In cases (b) and (c), the intermittently generated pairs allow the system to simultaneously carry the magnetospherically prescribed currents and adjust the charge density and average electric field to force-free conditions. We also elucidate the conditions for pair creating beam flow to be steady (stationary with small fluctuations in the rotating frame), finding that such steady flows can occupy only a small fraction of the current density parameter space exhibited by the force-free magnetospheric model. The generic polar flow dynamics and pair creation are strongly time dependent. The model has an essential difference from almost all previous quantitative studies, in that we sought the accelerating voltage (with pair creation, when the voltage drops are sufficiently large; without, when they are small) as a function of the applied current. The 1D results described here characterize the dependence of acceleration and pair creation on the magnitude and sign of current. The dependence on the spatial distribution of the current is a multi-dimensional problem, possibly exhibiting more chaotic behaviour. We briefly outline possible relations of the electric field fluctuations observed in the polar flows (both with and without pair creation discharges) to direct emission of radio waves, as well as revive the possible relation of the observed limit cycle behaviour to microstructure in the radio emission. Actually modelling these effects requires the multi-dimensional treatment, to be reported in a later paper.

Electrodynamics panel presentation

NASA Technical Reports Server (NTRS)

Mccoy, J.

1986-01-01

The Plasma Motor Generator (PMG) concept is explained in detail. The PMG tether systems being used to calculate the estimated performance data is described. The voltage drops and current contact geometries involved in the operation of an electrodynamic tether are displayed illustrating the comparative behavior of hollow cathodes, electron guns, and passive collectors for current coupling into the ionosphere. The basic PMG design involving the massive tether cable with little or no satellite mass at the far end(s) are also described. The Jupiter mission and its use of electrodynamic tethers are given. The need for demonstration experiments is stressed.

The Effect of Plug-in Electric Vehicles on Harmonic Analysis of Smart Grid

NASA Astrophysics Data System (ADS)

Heidarian, T.; Joorabian, M.; Reza, A.

2015-12-01

In this paper, the effect of plug-in electric vehicles is studied on the smart distribution system with a standard IEEE 30-bus network. At first, harmonic power flow analysis is performed by Newton-Raphson method and by considering distorted substation voltage. Afterward, proper sizes of capacitors is selected by cuckoo optimization algorithm to reduce the power losses and cost and by imposing acceptable limit for total harmonic distortion and RMS voltages. It is proposed that the impact of generated current harmonics by electric vehicle battery chargers should be factored into overall load control strategies of smart appliances. This study is generalized to the different hours of a day by using daily load curve, and then optimum time for charging of electric vehicles batteries in the parking lots are determined by cuckoo optimization algorithm. The results show that injecting harmonic currents of plug-in electric vehicles causes a drop in the voltage profile and increases power loss. Moreover, charging the vehicle batteries has more impact on increasing the power losses rather than the harmonic currents effect. Also, the findings showed that the current harmonics has a great influence on increasing of THD. Finally, optimum working times of all parking lots was obtained for the utilization cost reduction.

Domestic wastewater treatment and power generation in continuous flow air-cathode stacked microbial fuel cell: Effect of series and parallel configuration.

PubMed

Estrada-Arriaga, Edson Baltazar; Hernández-Romano, Jesús; García-Sánchez, Liliana; Guillén Garcés, Rosa Angélica; Bahena-Bahena, Erick Obed; Guadarrama-Pérez, Oscar; Moeller Chavez, Gabriela Eleonora

2018-05-15

In this study, a continuous flow stack consisting of 40 individual air-cathode MFC units was used to determine the performance of stacked MFC during domestic wastewater treatment operated with unconnected individual MFC and in series and parallel configuration. The voltages obtained from individual MFC units were of 0.08-1.1 V at open circuit voltage, while in series connection, the maximum power and current density were 2500 mW/m 2 and 500 mA/m 2 (4.9 V), respectively. In parallel connection, the maximum power and current density was 5.8 mW/m 2 and 24 mA/m 2 , respectively. When the cells were not connected to each other MFC unit, the main bacterial species found in the anode biofilms were Bacillus and Lysinibacillus. After switching from unconnected to series and parallel connections, the most abundant species in the stacked MFC were Pseudomonas aeruginosa, followed by different Bacilli classes. This study demonstrated that when the stacked MFC was switched from unconnected to series and parallel connections, the pollutants removal, performance electricity and microbial community changed significantly. Voltages drops were observed in the stacked MFC, which was mainly limited by the cathodes. These voltages loss indicated high resistances within the stacked MFC, generating a parasitic cross current. Copyright © 2018 Elsevier Ltd. All rights reserved.

Anomalous Current-Voltage Characteristics in Suspended Carbon Nanotubes in Various Gas Environments

NASA Astrophysics Data System (ADS)

Amer, Moh; Bushmaker, Adam; Cronin, Steve

2011-03-01

Electrically-heated suspended, carbon nanotubes (CNTs) exhibiting negative differential conductance in the high bias regime experience a sudden drop in current (or ``kink'') in various gaseous environments. We study the effect of different gas molecules on these I - V characteristics while simultaneously monitoring the changes in the nanotube vibrational structure under high bias voltages using Raman spectroscopy. When the nanotube is electrically biased at the kink, the G band Raman mode is observed to downshift, as is typical of electrically heated devices. However, the G band frequency at the kink (ωGkink) lies in the narrow range between 1575 and 1579 cm-1 for all samples measured, regardless of gas environment. The voltage at which the kink occurs depends on the type of the gas environment with the following dependence: VkinkAr

METHOD OF LOCATING GROUNDS

DOEpatents

Macleish, K.G.

1958-02-11

ABS>This patent presents a method for locating a ground in a d-c circult having a number of parallel branches connected across a d-c source or generator. The complete method comprises the steps of locating the ground with reference to the mildpoint of the parallel branches by connecting a potentiometer across the terminals of the circuit and connecting the slider of the potentiometer to ground through a current indicating instrument, adjusting the slider to right or left of the mildpoint so as to cause the instrument to indicate zero, connecting the terminal of the network which is farthest from the ground as thus indicated by the potentiometer to ground through a condenser, impressing a ripple voltage on the circuit, and then measuring the ripple voltage at the midpoint of each parallel branch to find the branch in which is the lowest value of ripple voltage, and then measuring the distribution of the ripple voltage along this branch to determine the point at which the ripple voltage drops off to zero or substantially zero due to the existence of a ground. The invention has particular application where a circuit ground is present which will disappear if the normal circuit voltage is removed.

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

Electric-Field-Induced Degradation of Methylammonium Lead Iodide Perovskite Solar Cells.

PubMed

Bae, Soohyun; Kim, Seongtak; Lee, Sang-Won; Cho, Kyung Jin; Park, Sungeun; Lee, Seunghun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan

2016-08-18

Perovskite solar cells have great potential for high efficiency generation but are subject to the impact of external environmental conditions such as humidity, UV and sun light, temperature, and electric fields. The long-term stability of perovskite solar cells is an important issue for their commercialization. Various studies on the stability of perovskite solar cells are currently being performed; however, the stability related to electric fields is rarely discussed. Here the electrical stability of perovskite solar cells is studied. Ion migration is confirmed using the temperature-dependent dark current decay. Changes in the power conversion efficiency according to the amount of the external bias are measured in the dark, and a significant drop is observed only at an applied voltage greater than 0.8 V. We demonstrate that perovskite solar cells are stable under an electric field up to the operating voltage.

Integrating preconcentrator heat controller

DOEpatents

Bouchier, Francis A.; Arakaki, Lester H.; Varley, Eric S.

2007-10-16

A method and apparatus for controlling the electric resistance heating of a metallic chemical preconcentrator screen, for example, used in portable trace explosives detectors. The length of the heating time-period is automatically adjusted to compensate for any changes in the voltage driving the heating current across the screen, for example, due to gradual discharge or aging of a battery. The total deposited energy in the screen is proportional to the integral over time of the square of the voltage drop across the screen. Since the net temperature rise, .DELTA.T.sub.s, of the screen, from beginning to end of the heating pulse, is proportional to the total amount of heat energy deposited in the screen during the heating pulse, then this integral can be calculated in real-time and used to terminate the heating current when a pre-set target value has been reached; thereby providing a consistent and reliable screen temperature rise, .DELTA.T.sub.s, from pulse-to-pulse.

Biased four-point probe resistance

NASA Astrophysics Data System (ADS)

Garcia-Vazquez, Valentin

2017-11-01

The implications of switching the current polarity in a four-point probe resistance measurement are presented. We demonstrate that, during the inversion of the applied current, any change in the voltage V produced by a continuous drop of the sample temperature T will induce a bias in the temperature-dependent DC resistance. The analytical expression for the bias is deduced and written in terms of the variations of the measured voltages with respect to T and by the variations of T with respect to time t. Experimental data measured on a superconducting Nb thin film confirm that the bias of the normal-state resistance monotonically increases with the cooling rate dT/dt while keeping fixed dV/dT; on the other hand, the bias increases with dV/dT, reaching values up to 13% with respect to the unbiased resistance obtained at room temperature.

Primary thermometry with nanoscale tunnel junctions

NASA Astrophysics Data System (ADS)

Hirvi, K. P.; Kauppinen, J. P.; Paalanen, M. A.; Pekola, J. P.

1995-10-01

We have found current-voltage (I-V) and conductance (dI/dV) characteristics of arrays of nanoscale tunnel junctions between normal metal electrodes to exhibit suitable features for primary thermometry. The current through a uniform array depends on the ratio of the thermal energy kBT and the electrostatic charging energy E c of the islands between the junctions and is completely blocked by Coulomb repulsion at T = 0 and at small voltages eV/2 ≤ Ec. In the opposite limit, kBT ≫ Ec, the width of the conductance minimum scales linearly and universally with T and N, the number of tunnel junctions, and qualifies as a primary thermometer. The zero bias drop in the conductance is proportional to T-1 and can be used as a secondary thermometer. We will show with Monte Carlo simulations how background charge and nonuniformities of the array will affect the thermometer.

Intelligent control for PMSM based on online PSO considering parameters change

NASA Astrophysics Data System (ADS)

Song, Zhengqiang; Yang, Huiling

2018-03-01

A novel online particle swarm optimization method is proposed to design speed and current controllers of vector controlled interior permanent magnet synchronous motor drives considering stator resistance variation. In the proposed drive system, the space vector modulation technique is employed to generate the switching signals for a two-level voltage-source inverter. The nonlinearity of the inverter is also taken into account due to the dead-time, threshold and voltage drop of the switching devices in order to simulate the system in the practical condition. Speed and PI current controller gains are optimized with PSO online, and the fitness function is changed according to the system dynamic and steady states. The proposed optimization algorithm is compared with conventional PI control method in the condition of step speed change and stator resistance variation, showing that the proposed online optimization method has better robustness and dynamic characteristics compared with conventional PI controller design.

Memristor-integrated voltage-stabilizing supercapacitor system.

PubMed

Liu, Bin; Liu, Boyang; Wang, Xianfu; Wu, Xinghui; Zhao, Wenning; Xu, Zhimou; Chen, Di; Shen, Guozhen

2014-08-06

Voltage-stabilized supercapacitors: A single supercapacitor formed with PCBM/Pt/IPS nanorod-array electrodes is designed and delivers enhanced areal capacitance, capacitance retention, and excellent electrical stability under bending, while a significant voltage-decrease is observed during the discharging process. Once integrated with the memristor, the memristor-integrated supercapacitor systems deliver an extremely low voltage-drop, indicating greatly enhanced voltage-stabilizing features. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electric currents and voltage drops along auroral field lines

NASA Technical Reports Server (NTRS)

Stern, D. P.

1983-01-01

An assessment is presented of the current state of knowledge concerning Birkeland currents and the parallel electric field, with discussions focusing on the Birkeland primary region 1 sheets, the region 2 sheets which parallel them and appear to close in the partial ring current, the cusp currents (which may be correlated with the interplanetary B(y) component), and the Harang filament. The energy required by the parallel electric field and the associated particle acceleration processes appears to be derived from the Birkeland currents, for which evidence is adduced from particles, inverted V spectra, rising ion beams and expanded loss cones. Conics may on the other hand signify acceleration by electrostatic ion cyclotron waves associated with beams accelerated by the parallel electric field.

Numerical simulations of electric potential field for alternating current potential drop associated with surface cracks in low-alloy steel nuclear material

NASA Astrophysics Data System (ADS)

Yeh, Chun-Ping; Huang, Jiunn-Yuan

2018-04-01

Low-alloy steels used as structural materials in nuclear power plants are subjected to cyclic stresses during power plant operations. As a result, cracks may develop and propagate through the material. The alternating current potential drop technique is used to measure the lengths of cracks in metallic components. The depth of the penetration of the alternating current is assumed to be small compared to the crack length. This assumption allows the adoption of the unfolding technique to simplify the problem to a surface Laplacian field. The numerical modelling of the electric potential and current density distribution prediction model for a compact tension specimen and the unfolded crack model are presented in this paper. The goal of this work is to conduct numerical simulations to reduce deviations occurring in the crack length measurements. Numerical simulations were conducted on AISI 4340 low-alloy steel with different crack lengths to evaluate the electric potential distribution. From the simulated results, an optimised position for voltage measurements in the crack region was proposed.

Electrical potential difference during laser welding

NASA Astrophysics Data System (ADS)

Zohm, H.; Ambrosy, G.; Lackner, K.

2015-01-01

We present a new model for the generation of thermoelectric currents during laser welding, taking into account sheath effects at both contact points as well as the potential drop within the quasi-neutral plasma generated by the laser. We show that the model is in good agreement with experimentally measured electric potential difference between the hot and the cold parts of the welded workpiece. In particular, all three elements of the model are needed to correctly reproduce the sign of the measured voltage difference. The mechanism proposed relies on the temperature dependence of the electron flux from the plasma to the workpiece and hence does not need thermoemission from the workpiece surface to explain the experimentally observed sign and magnitude of the potential drop.

Silicon Carbide Emitter Turn-Off Thyristor

DOE PAGES

Wang, Jun; Wang, Gangyao; Li, Jun; ...

2008-01-01

A novel MOS-conmore » trolled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  A / cm 2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  W / cm 2 conduction and the 100  W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.« less

Development of Vibration-Based Piezoelectric Raindrop Energy Harvesting System

NASA Astrophysics Data System (ADS)

Wong, Chin Hong; Dahari, Zuraini

2017-03-01

The trend of finding new means to harvest energy has triggered numerous researches to explore the potential of raindrop energy harvesting. This paper presents an investigation on raindrop energy harvesting which compares the performance of polyvinylidene fluoride (PVDF) cantilever and bridge structure transducers and the development of a raindrop energy harvesting system. The parameters which contribute to the output voltage such as droplet size, droplets released at specific heights and dimensions of PVDF transducers are analyzed. Based on the experimental results, the outcomes have shown that the bridge structure transducer generated a higher voltage than the cantilever. Several dimensions have been tested and it was found that the 30 mm × 4 mm × 25 μm bridge structure transducer generated a relatively high AC open-circuit voltage, which is 4.22 V. The power generated by the bridge transducer is 18 μW across a load of 330 kΩ. The transducer is able to drive up a standard alternative current (AC) to direct current (DC) converter (full-wave bridge rectifier). It generated a DC voltage, V DC of 8.7 mV and 229 pW across a 330 kΩ resistor per drop. It is also capable to generate 9.3 nJ in 20 s from an actual rain event.

In-situ diagnostic tools for hydrogen transfer leak characterization in PEM fuel cell stacks part II: Operational applications

NASA Astrophysics Data System (ADS)

Niroumand, Amir M.; Homayouni, Hooman; DeVaal, Jake; Golnaraghi, Farid; Kjeang, Erik

2016-08-01

This paper describes a diagnostic tool for in-situ characterization of the rate and distribution of hydrogen transfer leaks in Polymer Electrolyte Membrane (PEM) fuel cell stacks. The method is based on reducing the air flow rate from a high to low value at a fixed current, while maintaining an anode overpressure. At high air flow rates, the reduction in air flow results in lower oxygen concentration in the cathode and therefore reduction in cell voltages. Once the air flow rate in each cell reaches a low value at which the cell oxygen-starves, the voltage of the corresponding cell drops to zero. However, oxygen starvation results from two processes: 1) the electrochemical oxygen reduction reaction which produces current; and 2) the chemical reaction between oxygen and the crossed over hydrogen. In this work, a diagnostic technique has been developed that accounts for the effect of the electrochemical reaction on cell voltage to identify the hydrogen leak rate and number of leaky cells in a fuel cell stack. This technique is suitable for leak characterization during fuel cell operation, as it only requires stack air flow and voltage measurements, which are readily available in an operational fuel cell system.

Automatic Control of Arc Process for Making Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Scott, Carl D.; Pulumbarit, Robert B.; Victor, Joe

2004-01-01

An automatic-control system has been devised for a process in which carbon nanotubes are produced in an arc between a catalyst-filled carbon anode and a graphite cathode. The control system includes a motor-driven screw that adjusts the distance between the electrodes. The system also includes a bridge circuit that puts out a voltage proportional to the difference between (1) the actual value of potential drop across the arc and (2) a reference value between 38 and 40 V (corresponding to a current of about 100 A) at which the yield of carbon nanotubes is maximized. Utilizing the fact that the potential drop across the arc increases with the interelectrode gap, the output of the bridge circuit is fed to a motor-control circuit that causes the motor to move the anode toward or away from the cathode if the actual potential drop is more or less, respectively, than the reference potential. Thus, the system regulates the interelectrode gap to maintain the optimum potential drop. The system also includes circuitry that records the potential drop across the arc and the relative position of the anode holder as function of time.

Fluidization quality analyzer for fluidized beds

DOEpatents

Daw, C. Stuart; Hawk, James A.

1995-01-01

A control loop and fluidization quality analyzer for a fluidized bed utilizes time varying pressure drop measurements. A fast-response pressure transducer measures the overall bed pressure drop, or over some segment of the bed, and the pressure drop signal is processed to produce an output voltage which changes with the degree of fluidization turbulence.

Fluidization quality analyzer for fluidized beds

DOEpatents

Daw, C.S.; Hawk, J.A.

1995-07-25

A control loop and fluidization quality analyzer for a fluidized bed utilizes time varying pressure drop measurements. A fast-response pressure transducer measures the overall bed pressure drop, or over some segment of the bed, and the pressure drop signal is processed to produce an output voltage which changes with the degree of fluidization turbulence. 9 figs.

Investigation of an Aberrant Cell Voltage During the Filling of a Large Lithium Thionyl Chloride Cell

NASA Technical Reports Server (NTRS)

Thaller, Lawrence H.; Quinzio, Michael V.

1997-01-01

The investigation of an aberrant cell voltage during the filling of a large lithium thionyl chloride cell summary is at: an aberrant voltage trace was noted during the review of cell filling data; incident was traced to an interruption during filling; experimentation suggested oxidizable sites within the carbon electrode were responsible for the drop in voltage; the voltage anomaly could be reproduced by interrupting the filling of similar cells; and anomalous voltage dip was not due to a short.

Theory of passive proton conductance in lipid bilayers.

PubMed

Nagle, J F

1987-10-01

The large permeability of lipid bilayers to protons compared to other small ions calls for a special proton transport mechanism. At the present time, only mechanisms involving transient hydrogen-bonded chains of water can account for the experimental result that the conductance is nearly independent of pH. Three models involving transient hydrogen-bonded chains are discussed, including an outline of the kinetic calculations that lead to predictions of current versus voltage drop and current versus pH differences. These calculations can be compared to experiment to determine which, if any, of these models pertains to lipid bilayers.

Relationship between field-aligned currents and inverted-V parallel potential drops observed at midaltitudes

NASA Astrophysics Data System (ADS)

Sakanoi, T.; Fukunishi, H.; Mukai, T.

1995-10-01

The inverted-V field-aligned acceleration region existing in the altitude range of several thousand kilometers plays an essential role for the magnetosphere-ionosphere coupling system. The adiabatic plasma theory predicts a linear relationship between field-aligned current density (J∥) and parallel potential drop (Φ∥), that is, J∥=KΦ∥, where K is the field-aligned conductance. We examined this relationship using the charged particle and magnetic field data obtained from the Akebono (Exos D) satellite. The potential drop above the satellite was derived from the peak energy of downward electrons, while the potential drop below the satellite was derived from two different methods: the peak energy of upward ions and the energy-dependent widening of electron loss cone. On the other hand, field-aligned current densities in the inverted-V region were estimated from the Akebono magnetometer data. Using these potential drops and field-aligned current densities, we estimated the linear field-aligned conductance KJΦ. Further, we obtained the corrected field-aligned conductance KCJΦ by applying the full Knight's formula to the current-voltage relationship. We also independently estimated the field-aligned conductance KTN from the number density and the thermal temperature of magnetospheric source electrons which were obtained by fitting accelerated Maxwellian functions for precipitating electrons. The results are summarized as follows: (1) The latitudinal dependence of parallel potential drops is characterized by a narrow V-shaped structure with a width of 0.4°-1.0°. (2) Although the inverted-V potential region exactly corresponds to the upward field aligned current region, the latitudinal dependence of upward current intensity is an inverted-U shape rather than an inverted-V shape. Thus it is suggested that the field-aligned conductance KCJΦ changes with a V-shaped latitudinal dependence. In many cases, KCJΦ values at the edge of the inverted-V region are about 5-10 times larger than those at the center. (3) By comparing KCJΦ with KTN, KCJΦ is found to be about 2-20 times larger than KTN. These results suggest that low-energy electrons such as trapped electrons, secondary and back-scattered electrons, and ionospheric electrons significantly contribute to upward field-aligned currents in the inverted-V region. It is therefore inferred that non adiabatic pitch angle scattering processes play an important role in the inverted-V region. .

Experimental and theoretical characterization of the voltage distribution generated by deep brain stimulation.

PubMed

Miocinovic, Svjetlana; Lempka, Scott F; Russo, Gary S; Maks, Christopher B; Butson, Christopher R; Sakaie, Ken E; Vitek, Jerrold L; McIntyre, Cameron C

2009-03-01

Deep brain stimulation (DBS) is an established therapy for the treatment of Parkinson's disease and shows great promise for numerous other disorders. While the fundamental purpose of DBS is to modulate neural activity with electric fields, little is known about the actual voltage distribution generated in the brain by DBS electrodes and as a result it is difficult to accurately predict which brain areas are directly affected by the stimulation. The goal of this study was to characterize the spatial and temporal characteristics of the voltage distribution generated by DBS electrodes. We experimentally recorded voltages around active DBS electrodes in either a saline bath or implanted in the brain of a non-human primate. Recordings were made during voltage-controlled and current-controlled stimulation. The experimental findings were compared to volume conductor electric field models of DBS parameterized to match the different experiments. Three factors directly affected the experimental and theoretical voltage measurements: 1) DBS electrode impedance, primarily dictated by a voltage drop at the electrode-electrolyte interface and the conductivity of the tissue medium, 2) capacitive modulation of the stimulus waveform, and 3) inhomogeneity and anisotropy of the tissue medium. While the voltage distribution does not directly predict the neural response to DBS, the results of this study do provide foundational building blocks for understanding the electrical parameters of DBS and characterizing its effects on the nervous system.

Off-set stabilizer for comparator output

DOEpatents

Lunsford, James S.

1991-01-01

A stabilized off-set voltage is input as the reference voltage to a comparator. In application to a time-interval meter, the comparator output generates a timing interval which is independent of drift in the initial voltage across the timing capacitor. A precision resistor and operational amplifier charge a capacitor to a voltage which is precisely offset from the initial voltage. The capacitance of the reference capacitor is selected so that substantially no voltage drop is obtained in the reference voltage applied to the comparator during the interval to be measured.

Experimental Analysis of Voltage Drop Compensation in a DC Electrified Railway by Introducing an Energy Storage System Incorporating EDLCs

NASA Astrophysics Data System (ADS)

Konishi, Takeshi; Hase, Shin-Ichi; Nakamichi, Yoshinobu; Nara, Hidetaka; Uemura, Tadashi

Interest has been shown in the concept of an energy storage system aimed at leveling load and improving energy efficiency by charging during vehicle regeneration and discharging during running. Such a system represents an efficient countermeasure against pantograph point voltage drop, power load fluctuation and regenerative power loss. We selected an EDLC model as an energy storage medium and a step-up/step-down chopper as a power converter to exchange power between the storage medium and overhead lines. Basic verification was conducted using a mini-model for DC 400V, demonstrating characteristics suitable for its use as an energy storage system. Based on these results, an energy storage system was built for DC 600V and a verification test conducted in conjunction with the Enoshima Electric Railway Co. Ltd. This paper gives its experimental analysis of voltage drop compensation in a DC electrified railway and some discussions based on the test.

Nondestructive hall coefficient measurements using ACPD techniques

NASA Astrophysics Data System (ADS)

Velicheti, Dheeraj; Nagy, Peter B.; Hassan, Waled

2018-04-01

Hall coefficient measurements offer great opportunities as well as major challenges for nondestructive materials characterization. The Hall effect is produced by the magnetic Lorentz force acting on moving charge carriers in the presence of an applied magnetic field. The magnetic perturbation gives rise to a Hall current that is normal to the conduction current but does not directly perturb the electric potential distribution. Therefore, Hall coefficient measurements usually exploit the so-called transverse galvanomagnetic potential drop effect that arises when the Hall current is intercepted by the boundaries of the specimen and thereby produce a measurable potential drop. In contrast, no Hall potential is produced in a large plate in the presence of a uniform normal field at quasi-static low frequencies. In other words, conventional Hall coefficient measurements are inherently destructive since they require cutting the material under tests. This study investigated the feasibility of using alternating current potential drop (ACPD) techniques for nondestructive Hall coefficient measurements in plates. Specifically, the directional four-point square-electrode configuration is investigated with superimposed external magnetic field. Two methods are suggested to make Hall coefficient measurements in large plates without destructive machining. At low frequencies, constraining the bias magnetic field can replace constraining the dimensions of the specimen, which is inherently destructive. For example, when a cylindrical permanent magnet is used to provide the bias magnetic field, the peak Hall voltage is produced when the diameter of the magnet is equal to the diagonal of the square ACPD probe. Although this method is less effective than cutting the specimen to a finite size, the loss of sensitivity is less than one order of magnitude even at very low frequencies. In contrast, at sufficiently high inspection frequencies the magnetic field of the Hall current induces a strong enough Hall electric field that produces measurable potential differences between points lying on the path followed by the Hall current even when it is not intercepted by either the edge of the specimen or the edge of the magnetic field. The induced Hall voltage increases proportionally to the square root of frequency as the current is squeezed into a shallow electromagnetic skin of decreasing depth. This approach could be exploited to measure the Hall coefficient near the surface at high frequencies without cutting the specimen.

Development of Voltage Regulation Plan by Composing Subsystem with the SFES for DC On-line Electric Vehicle

NASA Astrophysics Data System (ADS)

Jung, S.; Lee, J. H.; Yoon, M.; Lee, H.; Jang, G.

The study of the application process of the relatively small size 'Superconducting Flywheel Energy Storage (SFES)' system is conducted to regulate voltage fluctuation of the DC On-Line Electric Vehicle (OLEV) system, which is designed by using DC power system network. It is recommended to construct the power conversion system nearby the substation because the charging system is under the low voltage. But as the system is usually built around urban area and it makes hard to construct the subsystems at every station, voltage drop can occur in power supply inverter that is some distance from the substation. As the alternative of this issue, DC distribution system is recently introduced and has possibility to solve the above issue. In this paper, SFES is introduced to solve the voltage drop under the low voltage distribution system by using the concept of the proposed DC OLEV which results in building the longer distance power supply system. The simulation to design the SFES by using DC power flow analysis is carried out and it is verified in this paper.

Advanced Bode Plot Techniques for Ultrasonic Transducers

NASA Astrophysics Data System (ADS)

DeAngelis, D. A.; Schulze, G. W.

The Bode plot, displayed as either impedance or admittance versus frequency, is the most basic test used by ultrasonic transducer designers. With simplicity and ease-of-use, Bode plots are ideal for baseline comparisons such as spacing of parasitic modes or impedance, but quite often the subtleties that manifest as poor process control are hard to interpret or are nonexistence. In-process testing of transducers is time consuming for quantifying statistical aberrations, and assessments made indirectly via the workpiece are difficult. This research investigates the use of advanced Bode plot techniques to compare ultrasonic transducers with known "good" and known "bad" process performance, with the goal of a-priori process assessment. These advanced techniques expand from the basic constant voltage versus frequency sweep to include constant current and constant velocity interrogated locally on transducer or tool; they also include up and down directional frequency sweeps to quantify hysteresis effects like jumping and dropping phenomena. The investigation focuses solely on the common PZT8 piezoelectric material used with welding transducers for semiconductor wire bonding. Several metrics are investigated such as impedance, displacement/current gain, velocity/current gain, displacement/voltage gain and velocity/voltage gain. The experimental and theoretical research methods include Bode plots, admittance loops, laser vibrometry and coupled-field finite element analysis.

Ion properties in a Hall current thruster operating at high voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garrigues, L., E-mail: laurent.garrigues@laplace.univ-tlse.fr

2016-04-28

Operation of a 5 kW-class Hall current Thruster for various voltages from 400 V to 800 V and a xenon mass flow rate of 6 mg s{sup −1} have been studied with a quasi-neutral hybrid model. In this model, anomalous electron transport is fitted from ion mean velocity measurements, and energy losses due to electron–wall interactions are used as a tuned parameter to match expected electron temperature strength for same class of thruster. Doubly charged ions production has been taken into account and detailed collisions between heavy species included. As the electron temperature increases, the main channel of Xe{sup 2+} ion production becomes stepwisemore » ionization of Xe{sup +} ions. For an applied voltage of 800 V, the mass utilization efficiency is in the range of 0.8–1.1, and the current fraction of doubly charged ions varies between 0.1 and 0.2. Results show that the region of ion production of each species is located at the same place inside the thruster channel. Because collision processes mean free path is larger than the acceleration region, each type of ions experiences same potential drop, and ion energy distributions of singly and doubly charged are very similar.« less

Modular high-voltage bias generator powered by dual-looped self-adaptive wireless power transmission.

PubMed

Xie, Kai; Huang, An-Feng; Li, Xiao-Ping; Guo, Shi-Zhong; Zhang, Han-Lu

2015-04-01

We proposed a modular high-voltage (HV) bias generator powered by a novel transmitter-sharing inductive coupled wireless power transmission technology, aimed to extend the generator's flexibility and configurability. To solve the problems caused through an uncertain number of modules, a dual-looped self-adaptive control method is proposed that is capable of tracking resonance frequency while maintaining a relatively stable induction voltage for each HV module. The method combines a phase-locked loop and a current feedback loop, which ensures an accurate resonance state and a relatively constant boost ratio for each module, simplifying the architecture of the boost stage and improving the total efficiency. The prototype was built and tested. The input voltage drop of each module is less than 14% if the module number varies from 3 to 10; resonance tracking is completed within 60 ms. The efficiency of the coupling structure reaches up to 95%, whereas the total efficiency approaches 73% for a rated output. Furthermore, this technology can be used in various multi-load wireless power supply applications.

New modeling method for the dielectric relaxation of a DRAM cell capacitor

NASA Astrophysics Data System (ADS)

Choi, Sujin; Sun, Wookyung; Shin, Hyungsoon

2018-02-01

This study proposes a new method for automatically synthesizing the equivalent circuit of the dielectric relaxation (DR) characteristic in dynamic random access memory (DRAM) without frequency dependent capacitance measurement. Charge loss due to DR can be observed by a voltage drop at the storage node and this phenomenon can be analyzed by an equivalent circuit. The Havariliak-Negami model is used to accurately determine the electrical characteristic parameters of an equivalent circuit. The DRAM sensing operation is performed in HSPICE simulations to verify this new method. The simulation demonstrates that the storage node voltage drop resulting from DR and the reduction in the sensing voltage margin, which has a critical impact on DRAM read operation, can be accurately estimated using this new method.

Manifestation of counteracting photovoltaic effect on IV characteristics in multi-junction solar cells

NASA Astrophysics Data System (ADS)

Mintairov, M. A.; Evstropov, V. V.; Mintairov, S. A.; Shvarts, M. Z.; Kozhukhovskaia, S. A.; Kalyuzhnyy, N. A.

2017-11-01

The existence within monolithic double- and triple-junction solar cells of a photoelectric source, which counteracts the basic photovoltaic p-n junctions, is proved. The paper presents a detailed analysis of the shape of the light IV-characteristics, as well as the dependence Voc-Jsc (open circuit voltage - short-circuit current). It is established that the counteracting source is tunnel p+-n+ junction. The photoelectric characteristics of samples with different tunnel diode peak current values were investigated, including the case of a zero value. When the tunnel p+-n+ junction is photoactive, the Voc-Jsc dependence has a dropping part, including a sharp jump. This undesirable effect decreases with increasing peak current.

Anti-Le-Chatelet behavior driven by strong natural light

NASA Astrophysics Data System (ADS)

Antonyuk, B. P.

2007-01-01

We show that strong incoherent broad band light causes positive feedback in response to a static electric field in random media: electric current flows in opposite to a voltage drop direction; static polarization is induced in opposition to an applied electric field. This type of the electron motion amplifies the external action revealing anti-Le-Chatelet behavior. The applied static electric field is amplified up to the domain of optical damage of a silica glass ≈10 7 V/cm.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

The conversion of a room temperature NaK loop to a high temperature MHD facility for Li/V blanket testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reed, C.B.; Haglund, R.C.; Miller, M.E.

1996-12-31

The Vanadium/Lithium system has been the recent focus of ANL`s Blanket Technology Pro-ram, and for the last several years, ANL`s Liquid Metal Blanket activities have been carried out in direct support of the ITER (International Thermonuclear Experimental Reactor) breeding blanket task area. A key feasibility issue for the ITER Vanadium/Lithium breeding blanket is the Near the development of insulator coatings. Design calculations, Hua and Gohar, show that an electrically insulating layer is necessary to maintain an acceptably low magneto-hydrodynamic (MHD) pressure drop in the current ITER design. Consequently, the decision was made to convert Argonne`s Liquid Metal EXperiment (ALEX) frommore » a 200{degrees}C NaK facility to a 350{degrees}C lithium facility. The upgraded facility was designed to produce MHD pressure drop data, test section voltage distributions, and heat transfer data for mid-scale test sections and blanket mockups at Hartmann numbers (M) and interaction parameters (N) in the range of 10{sup 3} to 10{sup 5} in lithium at 350{degrees}C. Following completion of the upgrade work, a short performance test was conducted, followed by two longer multiple-hour, MHD tests, all at 230{degrees}C. The modified ALEX facility performed up to expectations in the testing. MHD pressure drop and test section voltage distributions were collected at Hartmann numbers of 1000.« less

Conversion of a room temperature NaK loop to a high temperature MHD facility for Li/V blanket testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reed, C.B.; Haglund, R.C.; Miller, M.E.

1996-12-31

The Vanadium/Lithium system has been the recent focus of ANL`s Blanket Technology Program, and for the last several years, ANL`s Liquid Metal Blanket activities have been carried out in direct support of the ITER (International Thermonuclear Experimental Reactor) breeding blanket task area. A key feasibility issue for the ITER Vanadium/Lithium breeding blanket is the development of insulator coatings. Design calculations, Hua and Gohar, show that an electrically insulating layer is necessary to maintain an acceptably low magnetohydrodynamic (MHD) pressure drop in the current ITER design. Consequently, the decision was made to convert Argonne`s Liquid Metal EXperiment (ALEX) from a 200{degree}Cmore » NaK facility to a 350{degree}C lithium facility. The upgraded facility was designed to produce MHD pressure drop data, test section voltage distributions, and heat transfer data for mid-scale test sections and blanket mockups at Hartmann numbers (M) and interaction parameters (N) in the range of 10{sup 3} to 10{sup 5} in lithium at 350{degree}C. Following completion of the upgrade work, a short performance test was conducted, followed by two longer, multiple-hour, MHD tests, all at 230{degree}C. The modified ALEX facility performed up to expectations in the testing. MHD pressure drop and test section voltage distributions were collected at Hartmann numbers of 1000. 4 refs., 2 figs.« less

Electric current distribution of a multiwall carbon nanotube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Li-Ying; Chang, Chia-Seng, E-mail: jasonc@phys.sinica.edu.tw; Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

2016-07-15

The electric current distribution in a multiwall carbon nanotube (MWCNT) was studied by in situ measuring the electric potential along an individual MWCNT in the ultra-high vacuum transmission electron microscope (TEM). The current induced voltage drop along each section of a side-bonded MWCNT was measured by a potentiometric probe in TEM. We have quantitatively derived that the current on the outermost shell depends on the applied current and the shell diameter. More proportion of the total electronic carriers hop into the inner shells when the applied current is increased. The larger a MWCNT’s diameter is, the easier the electronic carriersmore » can hop into the inner shells. We observed that, for an 8 nm MWCNT with 10 μA current applied, 99% of the total current was distributed on the outer two shells.« less

A robust hybrid fuzzy-simulated annealing-intelligent water drops approach for tuning a distribution static compensator nonlinear controller in a distribution system

NASA Astrophysics Data System (ADS)

Bagheri Tolabi, Hajar; Hosseini, Rahil; Shakarami, Mahmoud Reza

2016-06-01

This article presents a novel hybrid optimization approach for a nonlinear controller of a distribution static compensator (DSTATCOM). The DSTATCOM is connected to a distribution system with the distributed generation units. The nonlinear control is based on partial feedback linearization. Two proportional-integral-derivative (PID) controllers regulate the voltage and track the output in this control system. In the conventional scheme, the trial-and-error method is used to determine the PID controller coefficients. This article uses a combination of a fuzzy system, simulated annealing (SA) and intelligent water drops (IWD) algorithms to optimize the parameters of the controllers. The obtained results reveal that the response of the optimized controlled system is effectively improved by finding a high-quality solution. The results confirm that using the tuning method based on the fuzzy-SA-IWD can significantly decrease the settling and rising times, the maximum overshoot and the steady-state error of the voltage step response of the DSTATCOM. The proposed hybrid tuning method for the partial feedback linearizing (PFL) controller achieved better regulation of the direct current voltage for the capacitor within the DSTATCOM. Furthermore, in the event of a fault the proposed controller tuned by the fuzzy-SA-IWD method showed better performance than the conventional controller or the PFL controller without optimization by the fuzzy-SA-IWD method with regard to both fault duration and clearing times.

Preparation and characterization of electrodes for the NASA Redox storage system

NASA Technical Reports Server (NTRS)

Reid, M. A.; Gahn, R. F.; Ling, J. S.; Charleston, J.

1980-01-01

Electrodes for the Redox energy storage system based on iron and chromium chloride reactants is discussed. The physical properties of several lots of felt were determined. Procedures were developed for evaluating electrode performance in lab scale cells. Experimental procedures for evaluating electrodes by cyclic voltammetry are described which minimize the IR losses due to the high internal resistance in the felt (distributed resistance). Methods to prepare electrodes which reduced the coevolution of hydrogen at the chromium electrode and eleminate the drop in voltage on discharge occasionally seen with previous electrodes were discussed. Single cells of 0.3329 ft area with improved membranes and electrodes are operating at over 80% voltage efficiency and coulombic efficiencies of over 98% at current densities of 16 to 20 amp % ft.

Parallel Electric Field on Auroral Magnetic Field Lines.

NASA Astrophysics Data System (ADS)

Yeh, Huey-Ching Betty

1982-03-01

The interaction of Birkeland (magnetic-field-aligned) current carriers and the Earth's magnetic field results in electrostatic potential drops along magnetic field lines. The statistical distributions of the field-aligned potential difference (phi)(,(PARLL)) were determined from the energy spectra of electron inverted "V" events observed at ionospheric altitude for different conditions of geomagnetic activity as indicated by the AE index. Data of 1270 electron inverted "V"'s were obtained from Low-Energy Electron measurements of the Atmosphere Explorer-C and -D Satellite (despun mode) in the interval January 1974-April 1976. In general, (phi)(,(PARLL)) is largest in the dusk to pre-midnight sector, smaller in the post-midnight to dawn sector, and smallest in the near noon sector during quiet and disturbed geomagnetic conditions; there is a steady dusk-dawn-noon asymmetry of the global (phi)(,(PARLL)) distribution. As the geomagnetic activity level increases, the (phi)(,(PARLL)) pattern expands to lower invariant latitudes, and the magnitude of (phi)(,(PARLL)) in the 13-24 magnetic local time sector increases significantly. The spatial structure and intensity variation of the global (phi)(,(PARLL)) distribution are statistically more variable, and the magnitudes of (phi)(,(PARLL)) have smaller correlation with the AE-index, in the post-midnight to dawn sector. A strong correlation is found to exist between upward Birkeland current systems and global parallel potential drops, and between auroral electron precipitation patterns and parallel potential drops, regarding their mophology, their intensity and their dependence of geomagnetic activity. An analysis of the fine-scale simultaneous current-voltage relationship for upward Birkeland currents in Region 1 shows that typical field-aligned potential drops are consistent with model predictions based on linear acceleration of the charge carriers through an electrostatic potential drop along convergent magnetic field lines to maintain current continuity. In a steady state, this model of simple electrostatic acceleration without anomalous resistivity also predicts observable relations between global parallel currents and parallel potential drops and between global energy deposition and parallel potential drops. The temperature, density, and species of the unaccelerated charge carriers are the relevant parameters of the model. The dusk-dawn -noon asymmetry of the global (phi)(,(PARLL)) distribution can be explained by the above steady-state (phi)(,(PARLL)) process if we associate the source regions of upward Birkeland current carriers in Region 1, Region 2, and the cusp region with the plasma sheet boundary layer, the near-Earth plasma sheet, and the magnetosheath, respectively. The results of this study provide observational information on the global distribution of parallel potential drops and the prevailing process of generating and maintaining potential gradients (parallel electric fields) along auroral magnetic field lines.

Fault-tolerant power distribution system

NASA Technical Reports Server (NTRS)

Volp, Jeffrey A. (Inventor)

1987-01-01

A fault-tolerant power distribution system which includes a plurality of power sources and a plurality of nodes responsive thereto for supplying power to one or more loads associated with each node. Each node includes a plurality of switching circuits, each of which preferably uses a power field effect transistor which provides a diode operation when power is first applied to the nodes and which thereafter provides bi-directional current flow through the switching circuit in a manner such that a low voltage drop is produced in each direction. Each switching circuit includes circuitry for disabling the power field effect transistor when the current in the switching circuit exceeds a preselected value.

Laboratory experiments on plasma contactors

NASA Technical Reports Server (NTRS)

Wilbur, Paul J.; Williams, John D.

1990-01-01

Experimental results describing the operation of hollow cathode plasma contactors collecting and emitting electrons from and to an ambient plasma at current levels of the order of one ampere are presented. The voltage drops induced between a contactor and an ambient plasma are shown to be a few tens of volts at such current levels. The development of a double sheath and the production of substantial numbers of ions by electrons streaming across it are associated with the electron collection process. The development of a complex potential structure including a high potential hill just downstream of the cathode orifice is shown to characterize typical contactor emitting electrons.

Performance Theory of Diagonal Conducting Wall MHD Accelerators

NASA Technical Reports Server (NTRS)

Litchford, R. J.

2003-01-01

The theoretical performance of diagonal conducting wall crossed field accelerators is examined on the basis of an infinite segmentation assumption using a cross-plane averaged generalized Ohm's law for a partially ionized gas, including ion slip. The desired accelerator performance relationships are derived from the cross-plane averaged Ohm's law by imposing appropriate configuration and loading constraints. A current dependent effective voltage drop model is also incorporated to account for cold-wall boundary layer effects including gasdynamic variations, discharge constriction, and electrode falls. Definition of dimensionless electric fields and current densities lead to the construction of graphical performance diagrams, which further illuminate the rudimentary behavior of crossed field accelerator operation.

Simultaneous measurement of temperature and strain using four connecting wires

NASA Technical Reports Server (NTRS)

Parker, Allen R., Jr.

1993-01-01

This paper describes a new signal-conditioning technique for measuring strain and temperature which uses fewer connecting wires than conventional techniques. Simultaneous measurement of temperature and strain has been achieved by using thermocouple wire to connect strain gages to signal conditioning. This signal conditioning uses a new method for demultiplexing sampled analog signals and the Anderson current loop circuit. Theory is presented along with data to confirm that strain gage resistance change is sensed without appreciable error because of thermoelectric effects. Furthermore, temperature is sensed without appreciable error because of voltage drops caused by strain gage excitation current flowing through the gage resistance.

Specifics of Pulsed Arc Welding Power Supply Performance Based On A Transistor Switch

NASA Astrophysics Data System (ADS)

Krampit, N. Yu; Kust, T. S.; Krampit, M. A.

2016-08-01

Specifics of designing a pulsed arc welding power supply device are presented in the paper. Electronic components for managing large current was analyzed. Strengths and shortcomings of power supply circuits based on thyristor, bipolar transistor and MOSFET are outlined. As a base unit for pulsed arc welding was chosen MOSFET transistor, which is easy to manage. Measures to protect a transistor are given. As for the transistor control device is a microcontroller Arduino which has a low cost and adequate performance of the work. Bead transfer principle is to change the voltage on the arc in the formation of beads on the wire end. Microcontroller controls transistor when the arc voltage reaches the threshold voltage. Thus there is a separation and transfer of beads without splashing. Control strategies tested on a real device and presented. The error in the operation of the device is less than 25 us, it can be used controlling drop transfer at high frequencies (up to 1300 Hz).

New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Ha, Min-Woo; Lee, Seung-Chul; Choi, Young-Hwan; Kim, Soo-Seong; Yun, Chong-Man; Han, Min-Koo

2006-10-01

A new GaN Schottky barrier diode employing a trench structure, which is proposed and fabricated, successfully decreases a forward voltage drop without sacrificing any other electric characteristics. The trench is located in the middle of Schottky contact during a mesa etch. The Schottky metal of Pt/Mo/Ti/Au is e-gun evaporated on the 300 nm-deep trench as well as the surface of the proposed GaN Schottky barrier diode. The trench forms the vertical Au Schottky contact and lateral Pt Schottky contact due to the evaporation sequence of Schottky metal. The forward voltage drops of the proposed diode and conventional one are 0.73 V and 1.25 V respectively because the metal work function (5.15 eV) of the vertical Au Schottky contact is considerably less than that of the lateral Pt Schottky contact (5.65 eV). The proposed diode exhibits the low on-resistance of 1.58 mΩ cm 2 while the conventional one exhibits 8.20 mΩ cm 2 due to the decrease of a forward voltage drop.

A study of electrostatic spring softening for dual-axis micromirror

NASA Astrophysics Data System (ADS)

Zhao, Yi; E H Tay, Francis; Zhou, Guangya; Siong Chau, Fook

2006-08-01

Electrostatic spring softening is an important characteristic of electrostatically actuated dual-axis micromirror, since it lowers the resonant frequencies. This paper presents an approach based on approximating the electrostatic forces by the first-order Taylor's series expansion to investigate this characteristic. The dual-axis micromirror studied in this paper has three motion modes, two torsional (about x- and y-axis, respectively) and one translational (about z-axis). The stiffnesses of all these modes are softened by a DC bias voltage applied to the mirror plate. The resonant frequencies are lowered with the increment of the bias voltage. The relationship of the bias voltage and the resonant frequencies of all the motion modes is derived. The analytical results show that the resonant frequency curves are affected by the capacitor geometries, i.e. the gap between the mirror plate and the electrodes and the electrodes size. The lowering curves drop slowly when the bias voltage is small. While for large bias voltage, the lowering curves drop rapidly. The experiment results are consistent with those obtained by the analytical approach.

The Chemical and Educational Appeal of the Orange Juice Clock

NASA Astrophysics Data System (ADS)

Kelter, Paul B.; Carr, James D.; Johnson, Tanya; Mauricio Castro-Acuña, Carlos

1996-12-01

The Orange Juice Clock, in which a galvanic cell is made from the combination of a magnesium strip, a copper strip, and juice in a beaker, has been a popular classroom, conference, and workshop demonstration for nearly 10 years. It is widely enjoyed because it shows visually how chemistry - or more precisely, electrochemistry - is responsible for the very common phenomenon of a clock ticking. The chemistry of the process can also be understood on a variety of levels, from middle school (simple electron flow in a circuit, Ohm's law) and high school (reduction/oxidation and standard cell potentials) to first-year college (cell potential at nonideal conditions) and graduate school courses (overpotential and charge transfer across interfaces.) The discussion that follows considers the recent history, chemistry, and educational uses of the demonstration. The History The demonstration was devised by one of us (PK) in 1986, after reading an activity in Hubert Alyea's 1947 compendium of chemical demonstrations from this Journal (1). In that activity, Alyea hooked a magnesium strip to the negative battery terminal of an electric bell and hooked a copper strip to the positive terminal. He placed the loose ends of the strips into a 1M 2SO4 solution and the bell rang. After trying the demonstration, it seemed to make sense to modify the electrolyte to orange juice because it is safe, readily available, and would be a mixture in which the magnesium would oxidize more slowly than in sulfuric acid. Further, a clock was substituted for the bell because a clock is easier on the ears than a bell. A video of the orange-juice clock setup is given as Figure 1. Figure 1.The orange juice clock set up. Video of orange juice clock was filmed and editted by Jerry Jacobson at the University of Wisconsin - Madison. The apparatus was presented in 1987 as part of a teacher workshop led by Irwin Talesnick, then of Queen's University in Canada. Talesnick, whose distinguished career has been characterized by seeing educational possibilities in so many things, created a modified version of the clock, with the atomic numbers of the elements representing the hours in the day (see Fig. 2) in his internationally popular workshops. Due largely to Talesnick's efforts, the orange juice clock is a standard demonstration in many chemistry programs and presentations. Figure 2.Irwin Talesnick represents the hours of the day by the corresponding elements in his clock. The Procedure This can be done as a demonstration or as an activity, although at about 10 per clock, expense does become an issue. There are no unusual safety precautions with this demonstration. We know of no accidents that have occurred with the orange juice clock. The demonstration requires: a single AA-cell battery-operated wall clock with a sweep-second hand a medium-sized beaker (600 mL is fine) enough orange juice or other electrolyte mixture or solution to fill the beaker about 2/3 full (tap water often works fine!) a 20-30-cm magnesium strip, coiled at one end or wrapped around a popsicle stick a 20-30-cm copper strip, coiled at one end alligator clips to connect the strips to the battery terminals on the clock a stand against which to lean the setup The demonstration is put together as shown in Figure 3. Connect the magnesium to the "-" contact of the clock and the copper to the "+" contact. Immerse the other ends of the strips into the solution. The clock will start to tick within a few seconds. If it does not work within a short period of time, check that the strips are well connected to the battery terminals, are hooked to the proper poles, and are not touching each other. The clock should keep reasonably close time (in orange juice) for a couple of days, or until the magnesium is nearly completely oxidized. Figure 3.A schematic of the orange juice clock seup. Video of orange juice clock. In video, the copper electrode is on the left and the magnesium electrode is on the right. Video was filmed and editted by Jerry Jacobson at the University of Wisconsin - Madison. The Chemistry Basics When we ask students or precollege teacher groups about the reduction and oxidation reactions that are occurring, they invariably answer that the magnesium metal is being oxidized and the copper metal is being reduced. This response is important because we use it to impress upon students and workshop participants the importance of looking carefully at the system before giving what might seem like an obvious answer. The copper cannot be reduced because there is no copper ion in solution, and transition metals cannot be reduced to anions. Given what is actually in solution, participants can conclude that hydrogen ion can be reduced to molecular hydrogen (in orange juice) or that hydrogen in the water molecule is being reduced to molecular hydrogen (in hard tap water). In distilled water, the clock does not run because the internal resistance of the solution is too high, thus forcing the current to be very small. The reactions of interest are given as eqs 1-3: oxidation: Mg -> Mg2+ + 2e- Eo = 2.37 vs. SHE (1) reduction 2H+ + 2e- -> H2 Eo = 0.00 vs. SHE (2) (acid solution) reduction (water) 2H2O + 2e- -> H2 + 2OH- Eo = -0.8277 vs. SHE (3) where Eo = the voltage under standard conditions and SHE = standard hydrogen electrode. At standard conditions, under zero load (all activities equal to one and 298 K) the cell voltage should theoretically be 2.37 V in acid (pH = 1) and about 1.54 V in neutral solution, either of which is enough to allow the clock to run. It is important to remember the IUPAC convention for electrochemical cells: that voltage of the cell equals voltage of the cathodic half-cell minus voltage of the anodic half-cell. In this case, Eo = 0.00 V - (-2.37 V) = 2.37 V The standard free energy calculation is straightforward in each case (eq 4), DeltaGo = -nFEo in which n = number of moles of electrons transferred, as dictated by the stoichiometry of the reaction (in all reactions above, n = 2); F = Faraday's constant, 96,498 C per mole of electrons (it is useful to show students that this number is equal to the product of Avogadro's number and electron charge); and Eo = cell voltage under standard conditions (Eo = 2.37 V = 2.37 J/C in acid solution of pH = 1). In acid solution, DeltaG = -457,000 J = -4.57 kJ. The reaction is spontaneous (and there is enough current flow). The clock ticks. This represents an overview of the fundamental chemistry, suitable for a workshop, high school, or non-science first-year college audience. The discussion below considers some more advanced aspects of the demonstration, which make this an excellent demonstration for the first-year science majors' course as well as upper- and graduate-level analytical and electrochemistry courses. For Those Who Want More More advanced students can readily explore the parameters of the clock system beyond merely studying cell voltage at standard conditions. In this system, for example, two sources contribute to the oxidation of the magnesium electrode. One is the reaction with acid as part of the process that runs the clock. Also present is the reaction in acid solution that occurs irrespective of the electron flow used to run the clock, a process of corrosion that dissolves the metal without useful energy being obtained. It is possible to distinguish between the two and to determine, via Faraday's constant, the average current available to the clock in this system. Faraday's Constant and the Average Current Data for a typical determination are given in Table 1. The data were taken using a 0.3317-g magnesium strip that had been cleaned with steel wool. The magnesium and copper strips (the copper was cleaned by dipping in 1 M nitric acid for a few seconds) were placed in 400 mL of a commercial orange juice so that about 15 cm of each strip was above and 15 cm below the liquid line. About 5 cm of the magnesium strip was coiled. The clock was hooked up in the usual fashion. At 1-hour intervals, the mass of the magnesium wire was determined on an analytical balance. A digital multimeter was used to measure the voltage every hour and the current every other hour. The pH of the juice, initially 3.85 at 20 °C, was 3.93 at the end of the experiment, as measured with a portable pH meter. This is a typical result. A comparison system (called "no clock" in Table 1) was set up merely by putting a 0.3317-g strip of magnesium in 400 mL of orange juice. With this system we can exemplify a "corrosion process" where the anode and the cathode are in the same place. There is consumption of magnesium and evolution of molecular hydrogen but no useful current can be obtained. The mass of this magnesium strip was measured at 1-hour intervals. Faraday's constant, which relates coulombs to moles of electrons, can be used to calculate the approximate current available to the clock in this system. The current will not be constant because the H+ concentration (related to pH) is changing and also because the surface area and composition of the magnesium electrode change with time. The change is not necessarily regular, because although the surface is being oxidized, it is not smooth. The actual available surface area will therefore be considerably greater than the geometric surface. The mass of magnesium oxidized in the clock reaction over the 4-hour period is approximately equal to the change in grams of magnesium while running the clock minus the mass of magnesium oxidized in orange juice without the clock. Using the data from Table 1, grams Mg oxidized to run clock = approx. (0.3317 - 0.3089) - (0.3317 - 0.3136) = 0.0047 g Mg The average current can then be calculated via Faraday's constant: This is a rather simplistic way to get the current, but it shows well the use of Faraday's constant. The Value of Computer Interfacing - Exploring the Physics of Current/Voltage Measurements A more instructive measure of voltage vs. time, which opens up the activity to more interesting possibilities, was obtained by interfacing the clock to a Macintosh 8100/80 microcomputer via Vernier Corporation serial box interface hardware and software (see ref 2). This affordable (100-$250 per computer) interfacing package is being used in our first-year chemistry laboratories. The interfacing setup permitted data to be acquired at the much more meaningful rate of up to 50 points per second. It also permitted us to observe voltage variations with time while the strips in orange juice were hooked up to the clock. When data are taken 50 times per second rather than once every hour, the data take on new meaning. Figure 4 shows that there is a substantial drop in voltage each time the clock ticks. Figure 4.The observed voltage drop in the circuit corresponds to the ticking of the clock. The drop is due to the internal resistance of the orange juice solution. Video of orange juice clock connected to chart recorder demostrating voltage drop in the circuit as clock ticks. Video was filmed and editted by Jerry Jacobson at the University of Wisconsin - Madison. This observation can be explained and can be predicted as part of a student activity, if we understand the nature of an open vs. a short circuit. A battery can, in concept, perform between two extreme points: an open circuit, in which the voltage (V) is at a maximum but there is no current (I), and a short circuit, in which the current is at a maximum but there is no voltage. A battery is best used at an intermediate point where the power, I xV, is a maximum. In summary (eqs 5-7): (5) Open Circuit: V = maximum and I = 0 (6) Short Circuit: I = maximum and V = 0 (7) Battery Use: I x V = power = maximum A 1.5-V battery has an open circuit potential of 1.5 volts. When the battery is working, however, the real voltage will be less than 1.5 V. This is due to the internal resistance of the battery. So the real voltage of the battery (Vreal) equals the open circuit voltage (Vopen) minus the voltage drop due to internal resistance in the battery. This drop is equal to the current passing through the circuit (I) multiplied by the internal resistance of the battery (Rint), as shown in eq 8: Vreal = Vopen - I x Rint (8) If the current passing is 0.002 A and the internal resistance of a 1.5-V battery is 50 Ohms, the real voltage is 1.4 V: Vreal = 1.5 V - (0.0020 A x 50 Ohms) = 1.4 V In this activity, in which we make a battery with a magnesium and a copper strip in orange juice, the juice itself provides the internal resistance in the battery. The key then to determining what the voltage drop should be is to find the internal resistance of the orange juice and then to find the current passing through the clock circuit. Students can determine the internal resistance of the orange juice by performing the following measurements. Note that the internal resistance of the orange juice is highly dependent upon how far apart the strips are in solution. The strips should be firmly taped, top and bottom, to the beaker. The data below were typical for 0.35-g Mg and 6.0-g Cu strips that were 4 cm apart in a 600-mL beaker with 400 mL of orange juice. The solution was not stirred. The area of the strips in solution was about 7.5 cm2 for the magnesium and about 15 cm2 for the copper. 1. Measure, using a high-impedance voltmeter, the voltage of the circuit using the voltmeter itself, rather than the clock, to complete the circuit. This will give a good approximation of the open circuit potential (the current is negligible, on the order of microamps if the voltmeter has MOhm resistance). In our setup Vopen = 1.772 V. 2. Attach a 1000-Ohm resistor across the circuit. Measure the voltage in parallel to the resistor. This voltage (1.037 V in our setup) will be equal to the current in the circuit x the resistance of 1000 Ohm. We can now solve for the current in this circuit: I = V/R = 1.037 V/1000 Ohm = 0.001037 A = 1.037 mA 3. The resistance of the orange juice is then calculated via the difference between the open circuit voltage (1.772 V) and the voltage with a known resistance (1.037 V). The difference, 1.772 - 1.037 = 0.735 V, equals the product of the circuit current and the resistance of the orange juice (ROJ), or ROJ = 0.735 V/0.001037 A = 708 Ohm 4. Finally, measure the current that the clock itself requires by hooking up in series an ammeter to the battery and the clock. The reading is not easy to take with an ammeter, which does not sample very often, and integrates across time. The computer interface works better for this. In our clock, a current of 0.49 mA was used. 5. The payoff comes at this point. The predicted voltage drop (I x Rint) can be calculated, voltage drop = I x Rint = 0.00049 A x 708 Ohm = 0.35 V Our observed voltage drops for this system were typically around 0.30 V. As a confirmation of the relationship of internal resistance to voltage drop, we placed the strips 1 mm apart in an orange by digging 2 holes in the orange and placing into the holes the coiled parts of the strips. We expected the voltage drop to be much higher than with the juice, due to the much higher internal resistance of the orange. Even when the strips were nearly touching, the drop was about 1 V. The Water Clock We discussed above the difference in the redox system when water is used rather than orange juice. Distilled water, which has a high internal resistance, will not permit the clock to run. However, hard tap water or distilled water with, for example, 1 g of table salt in 300 mL of water will work fine. As expected, because of the lower hydrogen ion concentration, the initial cell voltage is lower, typically around 1.45 V. The clock also ticks more slowly and more softly in water than in orange juice. In water, a black precipitate forms on the magnesium electrode and becomes more extensive with time. When the strip is removed from distilled water, and allowed to dry the precipitate turns white. Further student exploration on the precipitate might include designing experiments to find out if the precipitate is a carbonate or an oxide (from the hydroxide.) Non-Nernstian Considerations The systems above were always run without stirring because when setting up demonstrations, portability, simplicity, and expense are important, and the main concepts are as clear with a stir bar as without. We do note, however, that when the solution is constantly stirred, the rate of magnesium oxidation both with the clock setup and simply in solution is considerably faster than when the process is diffusion-limited. In fact, whereas the Mg strip will often last for several days in very dilute acid and overnight in orange juice when the solutions are not stirred, it will break off within 4 h when the solutions are stirred. Another important issue relates to our use of the Nernst equation to account for the potential developed in the system. This equation is very useful to assess chemistry at equilibrium conditions, but the orange juice clock is using an electric current and so is not at equilibrium. In our orange juice system, the Nernst equation (eq 9) is, in which E° = E°Mg - E°H2 - h and h = overpotential = difference in H2/H+ couple at a copper electrode minus that at platinum black. The hydrogen overpotential on a copper surface is typically 0.23 V. Another treatment of overpotential is given below. In our experiments, magnesium concentration and hydrogen activity were not measured or controlled; the pH was 3.85-3.93, as described above. The maximum theoretical potential of the electrode system is greater than that which is available to the clock when there is current flow. As described above, the potential drop is calculated as current ¥ internal resistance, equaling the "iR drop." This is why potentials are measured with a voltmeter, with a very high internal resistance, which draws very little current from the system. The measure of how far a system is from equilibrium is called the overpotential (h) h = actual potential minus potential at equilibrium This, along with the anodic and the cathodic components, the energy involved, and the temperature of the system are all dealt with using the Butler-Volmer equation, given as eq 10: I = io(e+Fh/2RT - e-Fh/2RT) (10) in which io is a specific constant for every system "electrode-electrolyte" and is called the "equilibrium exchange current." For this case, we have assumed the symmetry factor to be equal to 1/2. A detailed discussion of this factor is beyond the purpose of this paper, but can be found in ref 3. Questions To Raise with Students/Teacher Workshop Participants This demonstration can be a starting point for many concepts. It is especially powerful in showing how chemistry can be used beyond the chemistry laboratory. The primary question is "how is this system different from that in which redox occurs at one surface (such as a zinc strip placed in a solution of copper sulfate)?" The key with this electrochemical cell is that we are separating the anode from the cathode to take advantage of the electron flow (current) through an external wire and this current will give power to the clock or any other device. This is the essence of a battery. Other questions we often ask are: Is enough current produced to run a small electric motor? Light a light? Would the system work if we put Cu2+ ions into the solution? What would happen if we titrate the acid solution with a strong base while the clock is running? What happens to the voltage if we put Mg2+ into the system? Are the complex ions of Mg2+ with citric acid important to the potential value? What is the relationship between the clock ticking and different juices? Why is this relationship so? What are the reactions in the most popular commercial batteries? What is the chemical basis of rechargeable batteries? Related Activities We do this demonstration while studying electrochemistry during the second semester of the general chemistry sequence. In precollege teacher workshops, it is an important focus of an Operation Chemistry unit dealing with energy needs for living on board the space shuttle (4). A number of fairly safe activities work well as lead-in or follow-up material, as described in Table 2. Copies of these activities are available by writing to PK. Acknowledgments We wish to thank Walt Hancock and Jonathan Skean, along with our wonderful undergraduates Mickey Richards, Cory Emal, Julie Grundman, Jeff Atkins, and Darren Jack, for being there. Literature Cited 1. Alyea, H. N. Tested Demonstrations in General Chemistry, 1955-1956; American Chemical Society: Washington, DC, 1956. 2. Vernier Software, 8565 SW Beaverton Hillsdale Highway, Portland, OR 97225; phone (503) 297-5317. 3. Bockris, J.; Reddy, A. K. N. Modern Electrochemistry; Plenum: New York, 1970; Vol 2. 4. Kelter, P.; Hughes, K.; Murphy, A.; Roskos, P. J. Sci. Teacher Educ. 1995, 6, 57-59. 5. Tested Demonstrations in Chemistry; Gilbert, G., Ed.; American Chemical Society: Washington, DC, 1994; Vol. 1, #E-13. 6. Katz, D. A.; Willis, C. J. Chem. Educ. 1994, 71, 330-331. 7. Holmquist, D. D.; Volz, D. L. Chemistry with Computers;Vernier Software, Portland OR, 1994.

Study of switching transients in high frequency converters

NASA Technical Reports Server (NTRS)

Zinger, Donald S.; Elbuluk, Malik E.; Lee, Tony

1993-01-01

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

NASA Astrophysics Data System (ADS)

Meng, Jianwei; Jiang, Jun; Geng, Wenping; Chen, Zhihui; Zhang, Wei; Jiang, Anquan

2015-02-01

We fabricated (00l) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 Å and ferroelectric polarization of 82 µC/cm2 for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 Å and 51 µC/cm2 for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up-negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (Pf-Vf) hysteresis loops in both semiconducting thin films. Pf-Vf hysteresis loops after 1 µs-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K.

Low cost electronic ultracapacitor interface technique to provide load leveling of a battery for pulsed load or motor traction drive applications

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A battery load leveling arrangement for an electrically powered system in which battery loading is subject to intermittent high current loading utilizes a passive energy storage device and a diode connected in series with the storage device to conduct current from the storage device to the load when current demand forces a drop in battery voltage. A current limiting circuit is connected in parallel with the diode for recharging the passive energy storage device. The current limiting circuit functions to limit the average magnitude of recharge current supplied to the storage device. Various forms of current limiting circuits are disclosed, including a PTC resistor coupled in parallel with a fixed resistor. The current limit circuit may also include an SCR for switching regenerative braking current to the device when the system is connected to power an electric motor.

Electrowetting on semiconductors

NASA Astrophysics Data System (ADS)

Palma, Cesar; Deegan, Robert

2015-01-01

Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

Electron hydrodynamics dilemma: Whirlpools or no whirlpools

NASA Astrophysics Data System (ADS)

Pellegrino, Francesco M. D.; Torre, Iacopo; Geim, Andre K.; Polini, Marco

2016-10-01

In highly viscous electron systems such as high-quality graphene above liquid nitrogen temperature, a linear response to applied electric current becomes essentially nonlocal, which can give rise to a number of new and counterintuitive phenomena including negative nonlocal resistance and current whirlpools. It has also been shown that, although both effects originate from high electron viscosity, a negative voltage drop does not principally require current backflow. In this work, we study the role of geometry on viscous flow and show that confinement effects and relative positions of injector and collector contacts play a pivotal role in the occurrence of whirlpools. Certain geometries may exhibit backflow at arbitrarily small values of the electron viscosity, whereas others require a specific threshold value for whirlpools to emerge.

Breath Figures under Electrowetting: Electrically Controlled Evolution of Drop Condensation Patterns

NASA Astrophysics Data System (ADS)

Baratian, Davood; Dey, Ranabir; Hoek, Harmen; van den Ende, Dirk; Mugele, Frieder

2018-05-01

We show that electrowetting (EW) with structured electrodes significantly modifies the distribution of drops condensing onto flat hydrophobic surfaces by aligning the drops and by enhancing coalescence. Numerical calculations demonstrate that drop alignment and coalescence are governed by the drop-size-dependent electrostatic energy landscape that is imposed by the electrode pattern and the applied voltage. Such EW-controlled migration and coalescence of condensate drops significantly alter the statistical characteristics of the ensemble of droplets. The evolution of the drop size distribution displays self-similar characteristics that significantly deviate from classical breath figures on homogeneous surfaces once the electrically induced coalescence cascades set in beyond a certain critical drop size. The resulting reduced surface coverage, coupled with earlier drop shedding under EW, enhances the net heat transfer.

Performance improvements of the vertical, double-diffused power metal-oxide-silicon field-effect transistor

NASA Astrophysics Data System (ADS)

Zhu, Ronghua

An n-channel power vertical double-diffused metal-oxide-silicon field-effect transistor (VDMOSFET) with a new atomic-lattice-layout (ALL) has been designed and fabricated. The performance of the VDMOSFET with the ALL has been studied experimentally and comprehensively for the first time. The experimental results with the ALL are compared with the square (SQ), hexagonal (HEX) and stripe (STR) layouts for different applications. For high-frequency applications of VDMOSFET, the ALL is superior to the HEX and inferior to the STR. The optimum specific on-resistance and input capacitance product (Rsb{ON,SP} × Csb{iss,SP}) and optimum specific on-resistance and output capacitance product (Rsb{ON,SP} × Csb{oss,SP}) for the ALL are 44% and 36% lower than the HEX, and 10% and 13% higher than the STR, respectively. The ALL offers superior performance compared to the SQ for applications involving smart power feedback control using integrated current sensor. For a typical sense resistance of 100 Omega, the sense current drops 44% of its value at 0 Omega for the SQ, but only 11% for the ALL. For high-voltage and high-current applications, such as voltage-controlled current source, one observes that the ALL enters into quasi-saturation region at lower gate voltage (Vsb{G}). Typically, quasi-saturation occurs at Vsb{G} of 3V above the threshold voltage (Vsb{T}) for ALL, whereas this voltage is 5 and 6V for the STR and HEX, respectively. Minority carrier lifetime control by proton implantation has been successfully employed to improve the VDMOSFET built-in diode switching performance for the first time. A sevenfold reduction in reverse recovery charge has been achieved with a proton energy of 2.5 MeV and dose of 3 × 10sp{11}/cmsp2. The impact of proton implantation on diode forward voltage and the VDMOSFET characteristics, such as Vsb{T}, leakage current and on-resistance, has been found negligible. Proton implantation has also been found to significantly improve the device ruggedness. The peak reverse current of the built-in diode is reduced to 17.6 A for a proton energy of 1.5 MeV compared to 29.1 A for an un-implanted device at di/dt = 450 A/mus. The optimum location of the proton has been found at approximately middle of the epi-layer.

Radiometric and Radiation Response of Visible FPAs

NASA Technical Reports Server (NTRS)

Hubbs, John

2007-01-01

The readout integrated circuit (ROIC) used in these devices was originally developed for use in space based infrared systems operating at deep cryogenic temperatures and was selected because of its proven tolerance to total ionizing radiation? The detectors are a 128 x 128 array of 60 pm x 60 pm pixel elements that have been anti-reflection (AR) coated to improve the response at very short wavelengths. These visible focal plane arrays were operated at -40 C (233 K). Two focal planes were characterized using cobalt-60 radiation to produce ionizing total dose damage in the VFPAs. Both operational and performance data were obtained as functions of total dose. The first device tested showed no appreciable change in responsivity or noise up to 300 krad(Si). However, at the next dose level of 600 krad(Si), the readout was non-operational due to failure in the digital circuitry. The second device was characterized to a total dose of 750 krad(Si) with no observed change in responsivity. An increase dark current was observed in both devices, and in the second device, the dark current caused an increase in noise at low irradiance at 400 krad(Si) and above. The increase in dark current was somewhat un-expected for visible PIN detectors. The median dark current increased more than two orders of magnitude at 300 krad(Si) for the first device and a factor of 350 at 750 krad(Si) for pixels near the edge for the second device. The dark current was found to be a strong function of detector bias, with pixels near the edge of the array showing a greater increase in dark current with bias than those near the center. Since the optical response was not a function of bias, it is hypothesized that the dark current is a surface effect and that the variation in dark current with location is due to a variation in pixel bias, caused by a voltage drop across the pixel common lead. As the total dose increased, the dark current and the voltage drop increased

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

PubMed Central

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

PubMed

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Self-consistent electrostatic simulations of reforming double layers in the downward current region of the aurora

NASA Astrophysics Data System (ADS)

Gunell, H.; Andersson, L.; De Keyser, J.; Mann, I.

2015-10-01

The plasma on a magnetic field line in the downward current region of the aurora is simulated using a Vlasov model. It is found that an electric field parallel to the magnetic fields is supported by a double layer moving toward higher altitude. The double layer accelerates electrons upward, and these electrons give rise to plasma waves and electron phase-space holes through beam-plasma interaction. The double layer is disrupted when reaching altitudes of 1-2 Earth radii where the Langmuir condition no longer can be satisfied due to the diminishing density of electrons coming up from the ionosphere. During the disruption the potential drop is in part carried by the electron holes. The disruption creates favourable conditions for double layer formation near the ionosphere and double layers form anew in that region. The process repeats itself with a period of approximately 1 min. This period is determined by how far the double layer can reach before being disrupted: a higher disruption altitude corresponds to a longer repetition period. The disruption altitude is, in turn, found to increase with ionospheric density and to decrease with total voltage. The current displays oscillations around a mean value. The period of the oscillations is the same as the recurrence period of the double layer formations. The oscillation amplitude increases with increasing voltage, whereas the mean value of the current is independent of voltage in the 100 to 800 V range covered by our simulations. Instead, the mean value of the current is determined by the electron density at the ionospheric boundary.

Lithium battery discharge tests

NASA Technical Reports Server (NTRS)

Johnson, C. J.

1980-01-01

The long term discharge of a variety of lithium cells was characterized and the susceptibility of the cells to chemical variation during the slow discharge was tested. A shunt resistor was set across the terminals to monitor the voltage as a function of time. Failures were identified by premature voltage drops.

Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

NASA Astrophysics Data System (ADS)

Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

2018-02-01

A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

PSO Based PI Controller Design for a Solar Charger System

PubMed Central

Yau, Her-Terng; Lin, Chih-Jer; Liang, Qin-Cheng

2013-01-01

Due to global energy crisis and severe environmental pollution, the photovoltaic (PV) system has become one of the most important renewable energy sources. Many previous studies on solar charger integrated system only focus on load charge control or switching Maximum Power Point Tracking (MPPT) and charge control modes. This study used two-stage system, which allows the overall portable solar energy charging system to implement MPPT and optimal charge control of Li-ion battery simultaneously. First, this study designs a DC/DC boost converter of solar power generation, which uses variable step size incremental conductance method (VSINC) to enable the solar cell to track the maximum power point at any time. The voltage was exported from the DC/DC boost converter to the DC/DC buck converter, so that the voltage dropped to proper voltage for charging the battery. The charging system uses constant current/constant voltage (CC/CV) method to charge the lithium battery. In order to obtain the optimum PI charge controller parameters, this study used intelligent algorithm to determine the optimum parameters. According to the simulation and experimental results, the control parameters resulted from PSO have better performance than genetic algorithms (GAs). PMID:23766713

PSO based PI controller design for a solar charger system.

PubMed

Yau, Her-Terng; Lin, Chih-Jer; Liang, Qin-Cheng

2013-01-01

Due to global energy crisis and severe environmental pollution, the photovoltaic (PV) system has become one of the most important renewable energy sources. Many previous studies on solar charger integrated system only focus on load charge control or switching Maximum Power Point Tracking (MPPT) and charge control modes. This study used two-stage system, which allows the overall portable solar energy charging system to implement MPPT and optimal charge control of Li-ion battery simultaneously. First, this study designs a DC/DC boost converter of solar power generation, which uses variable step size incremental conductance method (VSINC) to enable the solar cell to track the maximum power point at any time. The voltage was exported from the DC/DC boost converter to the DC/DC buck converter, so that the voltage dropped to proper voltage for charging the battery. The charging system uses constant current/constant voltage (CC/CV) method to charge the lithium battery. In order to obtain the optimum PI charge controller parameters, this study used intelligent algorithm to determine the optimum parameters. According to the simulation and experimental results, the control parameters resulted from PSO have better performance than genetic algorithms (GAs).

Millimeter-Wave Circuit Analysis and Synthesis.

DTIC Science & Technology

1985-05-01

correct within a few percent and the resulting drain-source t.r7njnal current is usually high by approximately 10 percent. -20- Before Eqs. 5 and 9 can...typically used in arialytic FET models and is correct in the limit of long gates.1-3 With this approximation, the voltage drop across the depletion layer...carried out for two ba. c geometrica ss- ft WI sa of arbitrary thickness place-i c;c:.slc,, wi’ta -v .h each sidewall and (2) a thin Yl, s 1 te w~ith

Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

NASA Astrophysics Data System (ADS)

Wen, Hua; Zhu, Tiancong; Luo, Yunqiu Kelly; Amamou, Walid; Kawakami, Roland K.

2014-05-01

Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport.

The Implementation Internet of Things(IoT) Technology in Real Time Monitoring of Electrical Quantities

NASA Astrophysics Data System (ADS)

Despa, D.; Nama, G. F.; Muhammad, M. A.; Anwar, K.

2018-04-01

Electrical quantities such as Voltage, Current, Power, Power Factor, Energy, and Frequency in electrical power system tends to fluctuate, as a result of load changes, disturbances, or other abnormal states. The change-state in electrical quantities should be identify immediately, otherwise it can lead to serious problem for whole system. Therefore a necessity is required to determine the condition of electricity change-state quickly and appropriately in order to make effective decisions. Online monitoring of power distribution system based on Internet of Things (IoT) technology was deploy and implemented on Department of Mechanical Engineering University of Lampung (Unila), especially at three-phase main distribution panel H-building. The measurement system involve multiple sensors such current sensors and voltage sensors, while data processing conducted by Arduino, the measurement data stored in to the database server and shown in a real-time through a web-based application. This measurement system has several important features especially for realtime monitoring, robust data acquisition and logging, system reporting, so it will produce an important information that can be used for various purposes of future power analysis such estimation and planning. The result of this research shown that the condition of electrical power system at H-building performed unbalanced load, which often leads to drop-voltage condition

High voltage MOSFET switching circuit

DOEpatents

McEwan, Thomas E.

1994-01-01

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

Experimental verification of gain drop due to general ion recombination for a carbon-ion pencil beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tansho, Ryohei, E-mail: r-tansho@nirs.go.jp; Furukawa, Takuji; Hara, Yousuke

Purpose: Accurate dose measurement in radiotherapy is critically dependent on correction for gain drop, which is the difference of the measured current from the ideal saturation current due to general ion recombination. Although a correction method based on the Boag theory has been employed, the theory assumes that ionized charge density in an ionization chamber (IC) is spatially uniform throughout the irradiation volume. For particle pencil beam scanning, however, the charge density is not uniform, because the fluence distribution of a pencil beam is not uniform. The aim of this study was to verify the effect of the nonuniformity ofmore » ionized charge density on the gain drop due to general ion recombination. Methods: The authors measured the saturation curve, namely, the applied voltage versus measured current, using a large plane-parallel IC and 24-channel parallel-plate IC with concentric electrodes. To verify the effect of the nonuniform ionized charge density on the measured saturation curve, the authors calculated the saturation curve using a method which takes into account the nonuniform ionized charge density and compared it with the measured saturation curves. Results: Measurement values of the different saturation curves in the different channels of the concentric electrodes differed and were consistent with the calculated values. The saturation curves measured by the large plane-parallel IC were also consistent with the calculation results, including the estimation error of beam size and of setup misalignment. Although the impact of the nonuniform ionized charge density on the gain drop was clinically negligible with the conventional beam intensity, it was expected that the impact would increase with higher ionized charge density. Conclusions: For pencil beam scanning, the assumption of the conventional Boag theory is not valid. Furthermore, the nonuniform ionized charge density affects the prediction accuracy of gain drop when the ionized charge density is increased by a higher dose rate and/or lower beam size.« less

Experimental Nanofluidics in an individual Nanotube

NASA Astrophysics Data System (ADS)

Siria, Alessandro; Poncharal, Philippe; Biance, Anne Laure; Fulcrand, Remy; Purcell, Stephen; Bocquet, Lyderic

2012-11-01

Building new devices that benefit from the strange transport behavior of fluids at nanoscales is an open and worthy challenge that may lead to new scientific and technological paradigms. We present here a new class of nanofluidic device, made of individual Boron-Nitride (BN) nanotube inserted in a pierced membrane and connecting two macroscopic reservoirs. We explore fluidic transport inside a single BN nanotube under electric fields, pressure drops, chemical gradients, and combinations of these. We show that in this transmembrane geometry, the pressure-driven streaming current is voltage gated, with an apparent electro-osmotic zeta potential raising up to one volt. Further, we measured the current induced by ion concentration gradients and show its dependency on the surface charge.

Performance Theory of Diagonal Conducting Wall Magnetohydrodynamic Accelerators

NASA Technical Reports Server (NTRS)

Litchford, R. J.

2004-01-01

The theoretical performance of diagonal conducting wall crossed-field accelerators is examined on the basis of an infinite segmentation assumption using a cross-plane averaged generalized Ohm s law for a partially ionized gas, including ion slip. The desired accelerator performance relationships are derived from the cross-plane averaged Ohm s law by imposing appropriate configuration and loading constraints. A current-dependent effective voltage drop model is also incorporated to account for cold-wall boundary layer effects, including gasdynamic variations, discharge constriction, and electrode falls. Definition of dimensionless electric fields and current densities leads to the construction of graphical performance diagrams, which further illuminate the rudimentary behavior of crossed-field accelerator operation.

Observations of Magnetosphere-Ionosphere Coupling Processes in Jupiter's Downward Auroral Current Region

NASA Astrophysics Data System (ADS)

Clark, G. B.; Mauk, B.; Allegrini, F.; Bagenal, F.; Bolton, S. J.; Bunce, E. J.; Connerney, J. E. P.; Ebert, R. W.; Gershman, D. J.; Gladstone, R.; Haggerty, D. K.; Hospodarsky, G. B.; Kotsiaros, S.; Kollmann, P.; Kurth, W. S.; Levin, S.; McComas, D. J.; Paranicas, C.; Rymer, A. M.; Saur, J.; Szalay, J. R.; Tetrick, S.; Valek, P. W.

2017-12-01

Our view and understanding of Jupiter's auroral regions are ever-changing as Juno continues to map out this region with every auroral pass. For example, since last year's Fall AGU and the release of publications regarding the first perijove orbit, the Juno particles and fields teams have found direct evidence of parallel potential drops in addition to the stochastic broad energy distributions associated with the downward current auroral acceleration region. In this region, which appears to exist in an altitude range of 1.5-3 Jovian radii, the potential drops can reach as high as several megavolts. Associated with these potentials are anti-planetward electron angle beams, energetic ion conics and precipitating protons, oxygen and sulfur. Sometimes the potentials within the downward current region are structured such that they look like the inverted-V type distributions typically found in Earth's upward current region. This is true for both the ion and electron energy distributions. Other times, the parallel potentials appear to be intermittent or spatially structured in a way such that they do not look like the canonical diverging electrostatic potential structure. Furthermore, the parallel potentials vary grossly in spatial/temporal scale, peak voltage and associated parallel current density. Here, we present a comprehensive study of these structures in Jupiter's downward current region focusing on energetic particle measurements from Juno-JEDI.

Contact angle hysteresis and oil film lubrication in electrowetting with two immiscible liquids

NASA Astrophysics Data System (ADS)

Gao, J.; Mendel, N.; Dey, R.; Baratian, D.; Mugele, F.

2018-05-01

Electrowetting (EW) of water drops in ambient oil has found a wide range of applications including lab-on-a-chip devices, display screens, and variable focus lenses. The efficacy of all these applications is dependent on the contact angle hysteresis (CAH), which is generally reduced in the presence of ambient oil due to thin lubrication layers. While it is well-known that AC voltage reduces the effective contact angle hysteresis (CAH) for EW in ambient air, we demonstrate here that CAH for EW in ambient oil increases with increasing AC and DC voltage. Taking into account the disjoining pressure of the fluoropolymer-oil-water system, short range chemical interactions, viscous oil entrainment, and electrostatic stresses, we find that this observation can be explained by progressive thinning of the oil layer underneath the drop with increasing voltage. This exposes the droplet to the roughness of the underlying solid and thereby increases hysteresis.

The STD/MHD codes - Comparison of analyses with experiments at AEDC/HPDE, Reynolds Metal Co., and Hercules, Inc. [for MHD generator flows

NASA Technical Reports Server (NTRS)

Vetter, A. A.; Maxwell, C. D.; Swean, T. F., Jr.; Demetriades, S. T.; Oliver, D. A.; Bangerter, C. D.

1981-01-01

Data from sufficiently well-instrumented, short-duration experiments at AEDC/HPDE, Reynolds Metal Co., and Hercules, Inc., are compared to analyses with multidimensional and time-dependent simulations with the STD/MHD computer codes. These analyses reveal detailed features of major transient events, severe loss mechanisms, and anomalous MHD behavior. In particular, these analyses predicted higher-than-design voltage drops, Hall voltage overshoots, and asymmetric voltage drops before the experimental data were available. The predictions obtained with these analyses are in excellent agreement with the experimental data and the failure predictions are consistent with the experiments. The design of large, high-interaction or advanced MHD experiments will require application of sophisticated, detailed and comprehensive computational procedures in order to account for the critical mechanisms which led to the observed behavior in these experiments.

Current and temperature distributions in-situ acquired by electrode-segmentation along a microtubular solid oxide fuel cell operating with syngas

NASA Astrophysics Data System (ADS)

Aydın, Özgür; Nakajima, Hironori; Kitahara, Tatsumi

2015-10-01

Addressing the fuel distribution and endothermic cooling by the internal reforming, we have measured longitudinal current/temperature variations by ;Electrode-segmentation; in a microtubular solid oxide fuel cell operated with syngas (50% pre-reformed methane) and equivalent H2/N2 (100% conversion of syngas to H2) at three different flow rates. Regardless of the syngas flow rates, currents and temperatures show irregular fluctuations with varying amplitudes from upstream to downstream segment. Analysis of the fluctuations suggests that the methane steam reforming reaction is highly affected by the H2 partial pressure. Current-voltage curves plotted for the syngas and equivalent H2/N2 flow rates reveal that the fuel depletion is enhanced toward the downstream during the syngas operation, resulting in a larger performance degradation. All the segments exhibit temperature drops with the syngas flow compared with the equivalent H2/N2 flow due to the endothermic cooling by the methane steam reforming reaction. Despite the drops, the segment temperatures remain above the furnace temperature; besides, the maximum temperature difference along the cell diminishes. The MSR reaction rate does not consistently increase with the decreasing gas inlet velocity (increasing residence time on the catalyst); which we ascribe to the dominating impact of the local temperatures.

Simulation Model of A Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen; Russell, Larry W. (Technical Monitor)

2002-01-01

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

Anomalous resistivity effect on multiple ion beam emission and hard x-ray generation in a Mather type plasma focus device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Behbahani, R. A.; Aghamir, F. M.

Multi ion beam and hard x-ray emissions were detected in a high inductance (more than 100 nH) Mather type plasma focus (PF) device at different filling gas pressures and charging voltages. The signal analysis was performed through the current trace, as it is the fundamental signal from which all of the phenomena in a PF device can be extracted. Two different fitting processes were carried out according to Lee's computational (snow-plow) model. In the first process, only plasma dynamics and classical (Spitzer) resistances were considered as energy consumer parameters for plasma. This led to an unsuccessful fitting and did notmore » answer the energy transfer mechanism into plasma. A second fitting process was considered through the addition of anomalous resistance, which provided the best fit. Anomalous resistance was the source of long decrease in current trace, and multi dips and multi peaks of high voltage probe. Multi-peak features were interpreted considering the second fitting process along with the mechanisms for ion beam production and hard x-ray emission. To show the important role of the anomalous resistance, the duration of the current drop was discussed.« less

Photosensitivity of p-type black Si field emitter arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mingels, S., E-mail: smingels@uni-wuppertal.de; Porshyn, V.; Lützenkirchen-Hecht, D.

We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μA and 0.7% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitivemore » voltage drop across the emitters as well as hints for hot electron emission.« less

Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0.7Sr0.3MnO3 thin films

NASA Astrophysics Data System (ADS)

Lee, Hong-Sub; Park, Chang-Sun; Park, Hyung-Ho

2014-05-01

This study demonstrated that the resistive switching voltage of perovskite manganite material could be controlled by A-site cation substitution in "A" MnO3 perovskite manganite structure. A partial substitution of La3+ in La0.7Sr0.3MnO3 with smaller cation Gd3+ induced A-site vacancy of the largest Sr2+ cation with surface segregation of SrOy due to ionic size mismatch, and the induced vacancies reduced migration energy barrier. The operating voltage decreased from 3.5 V to 2.5 V due to a favorable condition for electrochemical migration and redox of oxygen ions. Moreover, surface-segregated SrOy was enhanced with Gd-substitution and the SrOy reduced Schottky-like barrier height and resistive switching ratio from the potential drop and screening effect. The relationship between A-site vacancy generation resulting in surface segregation of SrOy and resistive switching behavior was also investigated by energy resolved x-ray photoelectron spectroscopy, O 1s near edge x-ray absorption spectroscopy, and current voltage measurement.

A novel method for identification of lithium-ion battery equivalent circuit model parameters considering electrochemical properties

NASA Astrophysics Data System (ADS)

Zhang, Xi; Lu, Jinling; Yuan, Shifei; Yang, Jun; Zhou, Xuan

2017-03-01

This paper proposes a novel parameter identification method for the lithium-ion (Li-ion) battery equivalent circuit model (ECM) considering the electrochemical properties. An improved pseudo two-dimension (P2D) model is established on basis of partial differential equations (PDEs), since the electrolyte potential is simplified from the nonlinear to linear expression while terminal voltage can be divided into the electrolyte potential, open circuit voltage (OCV), overpotential of electrodes, internal resistance drop, and so on. The model order reduction process is implemented by the simplification of the PDEs using the Laplace transform, inverse Laplace transform, Pade approximation, etc. A unified second order transfer function between cell voltage and current is obtained for the comparability with that of ECM. The final objective is to obtain the relationship between the ECM resistances/capacitances and electrochemical parameters such that in various conditions, ECM precision could be improved regarding integration of battery interior properties for further applications, e.g., SOC estimation. Finally simulation and experimental results prove the correctness and validity of the proposed methodology.

High voltage MOSFET switching circuit

DOEpatents

McEwan, T.E.

1994-07-26

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

The role of extracellular conductivity profiles in compartmental models for neurons: particulars for layer 5 pyramidal cells.

PubMed

Wang, Kai; Riera, Jorge; Enjieu-Kadji, Herve; Kawashima, Ryuta

2013-07-01

With the rapid increase in the number of technologies aimed at observing electric activity inside the brain, scientists have felt the urge to create proper links between intracellular- and extracellular-based experimental approaches. Biophysical models at both physical scales have been formalized under assumptions that impede the creation of such links. In this work, we address this issue by proposing a multicompartment model that allows the introduction of complex extracellular and intracellular resistivity profiles. This model accounts for the geometrical and electrotonic properties of any type of neuron through the combination of four devices: the integrator, the propagator, the 3D connector, and the collector. In particular, we applied this framework to model the tufted pyramidal cells of layer 5 (PCL5) in the neocortex. Our model was able to reproduce the decay and delay curves of backpropagating action potentials (APs) in this type of cell with better agreement with experimental data. We used the voltage drops of the extracellular resistances at each compartment to approximate the local field potentials generated by a PCL5 located in close proximity to linear microelectrode arrays. Based on the voltage drops produced by backpropagating APs, we were able to estimate the current multipolar moments generated by a PCL5. By adding external current sources in parallel to the extracellular resistances, we were able to create a sensitivity profile of PCL5 to electric current injections from nearby microelectrodes. In our model for PCL5, the kinetics and spatial profile of each ionic current were determined based on a literature survey, and the geometrical properties of these cells were evaluated experimentally. We concluded that the inclusion of the extracellular space in the compartmental models of neurons as an extra electrotonic medium is crucial for the accurate simulation of both the propagation of the electric potentials along the neuronal dendrites and the neuronal reactivity to an electrical stimulation using external microelectrodes.

MATLAB implementation of a dynamic clamp with bandwidth >125 KHz capable of generating INa at 37°C

PubMed Central

Clausen, Chris; Valiunas, Virginijus; Brink, Peter R.; Cohen, Ira S.

2012-01-01

We describe the construction of a dynamic clamp with bandwidth >125 KHz that utilizes a high performance, yet low cost, standard home/office PC interfaced with a high-speed (16 bit) data acquisition module. High bandwidth is achieved by exploiting recently available software advances (code-generation technology, optimized real-time kernel). Dynamic-clamp programs are constructed using Simulink, a visual programming language. Blocks for computation of membrane currents are written in the high-level matlab language; no programming in C is required. The instrument can be used in single- or dual-cell configurations, with the capability to modify programs while experiments are in progress. We describe an algorithm for computing the fast transient Na+ current (INa) in real time, and test its accuracy and stability using rate constants appropriate for 37°C. We then construct a program capable of supplying three currents to a cell preparation: INa, the hyperpolarizing-activated inward pacemaker current (If), and an inward-rectifier K+ current (IK1). The program corrects for the IR drop due to electrode current flow, and also records all voltages and currents. We tested this program on dual patch-clamped HEK293 cells where the dynamic clamp controls a current-clamp amplifier and a voltage-clamp amplifier controls membrane potential, and current-clamped HEK293 cells where the dynamic clamp produces spontaneous pacing behavior exhibiting Na+ spikes in otherwise passive cells. PMID:23224681

Sensorless optimal sinusoidal brushless direct current for hard disk drives

NASA Astrophysics Data System (ADS)

Soh, C. S.; Bi, C.

2009-04-01

Initiated by the availability of digital signal processors and emergence of new applications, market demands for permanent magnet synchronous motors have been surging. As its back-emf is sinusoidal, the drive current should also be sinusoidal for reducing the torque ripple. However, in applications like hard disk drives, brushless direct current (BLDC) drive is adopted instead of sinusoidal drive for simplification. The adoption, however, comes at the expense of increased harmonics, losses, torque pulsations, and acoustics. In this paper, we propose a sensorless optimal sinusoidal BLDC drive. First and foremost, the derivation for an optimal sinusoidal drive is presented, and a power angle control scheme is proposed to achieve an optimal sinusoidal BLDC. The scheme maintains linear relationship between the motor speed and drive voltage. In an attempt to execute the sensorless drive, an innovative power angle measurement scheme is devised, which takes advantage of the freewheeling diodes and measures the power angle through the detection of diode voltage drops. The objectives as laid out will be presented and discussed in this paper, supported by derivations, simulations, and experimental results. The proposed scheme is straightforward, brings about the benefits of sensorless sinusoidal drive, negates the need for current sensors by utilizing the freewheeling diodes, and does not incur additional cost.

Improvement of the grid-connect current quality using novel proportional-integral controller for photovoltaic inverters.

PubMed

Cheng, Yuhua; Chen, Kai; Bai, Libing; Yang, Jing

2014-02-01

Precise control of the grid-connected current is a challenge in photovoltaic inverter research. Traditional Proportional-Integral (PI) control technology cannot eliminate steady-state error when tracking the sinusoidal signal from the grid, which results in a very high total harmonic distortion in the grid-connected current. A novel PI controller has been developed in this paper, in which the sinusoidal wave is discretized into an N-step input signal that is decided by the control frequency to eliminate the steady state error of the system. The effect of periodical error caused by the dead zone of the power switch and conduction voltage drop can be avoided; the current tracking accuracy and current harmonic content can also be improved. Based on the proposed PI controller, a 700 W photovoltaic grid-connected inverter is developed and validated. The improvement has been demonstrated through experimental results.

The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Sachenko, A. V.; Kryuchenko, Yu. V.; Kostylyov, V. P.; Korkishko, R. M.; Sokolovskyi, I. O.; Abramov, A. S.; Abolmasov, S. N.; Andronikov, D. A.; Bobyl', A. V.; Panaiotti, I. E.; Terukov, E. I.; Titov, A. S.; Shvarts, M. Z.

2016-03-01

Temperature dependences of the photovoltaic characteristics of ( p)a-Si/( i)a-Si:H/( n)c-Si singlecrystalline- silicon based heterojunction-with-intrinsic-thin-layer (HIT) solar cells have been measured in a temperature range of 80-420 K. The open-circuit voltage ( V OC), fill factor ( FF) of the current-voltage ( I-U) characteristic, and maximum output power ( P max) reach limiting values in the interval of 200-250 K on the background of monotonic growth in the short-circuit current ( I SC) in a temperature range of 80-400 K. At temperatures below this interval, the V OC, FF, and P max values exhibit a decrease. It is theoretically justified that a decrease in the photovoltaic energy conversion characteristics of solar cells observed on heating from 250 to 400 K is related to exponential growth in the intrinsic conductivity. At temperatures below 200 K, the I-U curve shape exhibits a change that is accompanied by a drop in V OC. Possible factors that account for the decrease in V OC, FF, and P max are considered.

Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

NASA Astrophysics Data System (ADS)

Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

2018-02-01

The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

Charge transport in doped zigzag phosphorene nanoribbons

NASA Astrophysics Data System (ADS)

Nourbakhsh, Zahra; Asgari, Reza

2018-06-01

The effects of lattice distortion and chemical disorder on charge transport properties of two-terminal zigzag phosphorene nanoribbons (zPNRs), which shows resonant tunneling behavior under an electrical applied bias, are studied. Our comprehensive study is based on ab initio quantum transport calculations on the basis of the Landauer theory. We use nitrogen and silicon substitutional dopant atoms, and employ different physical quantities such as the I -V curve, voltage drop behavior, transmission spectrum, transmission pathway, and atomic current to explore the transport mechanism of zPNR devices under a bias voltage. The calculated transmission pathways show the transition from a ballistic transport regime to a diffusive and in some particular cases to localized transport regimes. Current flowing via the chemical bonds and hopping are monitored; however, the conductance originates mainly from the charge traveling through the chemical bonds in the vicinity of the zigzag edges. Our results show that in the doped systems, the device conductance decreases and the negative differential resistance characteristic becomes weak or is eliminated. Besides, the conductance in a pure zPNR system is almost independent of the ribbon width.

FET commutated current-FED inverter

NASA Technical Reports Server (NTRS)

Rippel, Wally E. (Inventor); Edwards, Dean B. (Inventor)

1983-01-01

A shunt switch comprised of a field-effect transistor (Q.sub.1) is employed to commutate a current-fed inverter (10) using thyristors (SCR1, SCR2) or bijunction transistors (Q.sub.2, Q.sub.3) in a full bridge (1, 2, 3, 4) or half bridge (5, 6) and transformer (T.sub.1) configuration. In the case of thyristors, a tapped inverter (12) is employed to couple the inverter to a dc source to back bias the thyristors during commutation. Alternatively, a commutation power supply (20) may be employed for that purpse. Diodes (D.sub.1, D.sub.2) in series with some voltage dropping element (resistor R.sub.12 or resistors R.sub.1, R.sub.2 or Zener diodes D.sub.4, D.sub.5) are connected in parallel with the thyristors in the half bridge and transformer configuration to assure sharing the back bias voltage. A clamp circuit comprised of a winding (18) negatively coupled to the inductor and a diode (D.sub.3) return stored energy from the inductor to the power supply for efficient operation with buck or boost mode.

Switching dynamics of TaOx-based threshold switching devices

NASA Astrophysics Data System (ADS)

Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

2018-03-01

Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

The judgement of simultaneous commutation failure in HVDC about hierarchical connection to AC grid

NASA Astrophysics Data System (ADS)

Li, Ming; Song, Xinli; Huang, Daoshan; Liu, Wenzhuo; Zhao, Shutao; Ye, Xiaohui; Meng, Hang

2017-09-01

The hierarchical connection to AC grid at inverter sides in UHVDC has been take in several projects. This paper introduced the frame of the connection mode in hierarchical access system and compared it with the traditional one at the case of HVDC-Cigre. Then the criterion of commutation failure according to the same valves current was deduced. In order to verify the accuracy of the criterion, this paper used PSD-BPA (Bonneville Power Administration) to simulate the setting voltage drop in the East China power grid and certified the correctness of the formula.

Thermionic energy conversion technology - Present and future

NASA Technical Reports Server (NTRS)

Shimada, K.; Morris, J. F.

1977-01-01

Aerospace and terrestrial applications of thermionic direct energy conversion and advances in direct energy conversion (DEC) technology are surveyed. Electrode materials, the cesium plasma drop (the difference between the barrier index and the collector work function), DEC voltage/current characteristics, conversion efficiency, and operating temperatures are discussed. Attention is centered on nuclear reactor system thermionic DEC devices, for in-core or out-of-core operation. Thermionic fuel elements, the radiation shield, power conditions, and a waste heat rejection system are considered among the thermionic DEC system components. Terrestrial applications include topping power systems in fossil fuel and solar power generation.

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Electrohydrodynamic generation of millimetric drops and control of electrification

NASA Astrophysics Data System (ADS)

Yun, Sungchan

2017-07-01

We report a simple method for millimetric drop generation by electrohydrodynamic (EHD) detachment using a conventional nozzle-ring device. The EHD detachment method provides distinct features of uniform-size and controlled electrification of millimetric drops. The drop dynamics of detachment and shape oscillation are recorded using a high-speed camera and analyzed for several dc voltages applied to the electrode. Experimental studies show that an oscillation frequency can be closely related to the amount of electric charge, which can be explained based on both effective interfacial tension and inviscid Rayleigh and Lamb frequency. Furthermore, we present a concept to generate a neutral drop by adjusting the duration time of a pulse signal and discuss a drop oscillation induced by the detachment. This study can provide potential implications for drop manipulation, such as transporting, merging, and mixing, in microfluidic platforms.

The chording effect on core losses of three-phase induction motor under sinusoidal and PWM voltage supplies

NASA Astrophysics Data System (ADS)

Deshmukh, Ram; Moses, A. J.; Anayi, F.

The core losses and the lower-order voltage harmonics of four different chorded motors fed from sinusoidal supply and inverter voltage supply were invigilated at no-load condition. All the four motors were tested with 4, 8 and 16 kHz switching frequencies and 30, 40, 50 and 60 Hz modulation frequencies The motor with 120° coil pitch has the least core losses and the lower-order voltage harmonics under sinusoidal and pulse width modulation (PWM) voltage supplies at all switching and modulation frequencies. The drop in the core losses for this motor was 46% and 53% under sinusoidal and PWM voltage supplies, respectively. The motor with 120° coil pitch is recommended to be used under sinusoidal and PWM voltage supplies.

Advancing High Current Startup via Localized Helicity Injection in the PEGASUS Toroidal Experiment

NASA Astrophysics Data System (ADS)

Hinson, E. T.; Barr, J. L.; Bongard, M. W.; Burke, M. G.; Fonck, R. J.; Perry, J. M.; Redd, A. J.; Schlossberg, D. J.

2013-10-01

Non-solenoidal startup via local helicity injection (LHI) and poloidal field induction is used to produce Ip = 0 . 17 MA tokamak discharges. Impurity contamination has been reduced to negligible levels by use of conical frustum cathode geometry and local scraper limiters. Attainable currents are governed by global limits of helicity and energy balance, and Taylor relaxation. A simple lumped parameter model based on these limits is used to project discharge evolution, and indicates that attaining 1 MA in NSTX-U will require LHI-driven effective loop voltages to dominate contributions from dLp / dt . This regime contrasts with results to date and will be tested at 0.3 MA in PEGASUS with a new integrated multi-injector array. Injector impedance characteristics are consistent with magnetically-limited regimes observed in higher-power foilless diodes. Bursts of MHD are measured on time scales of order ~ 100 μ s, and correlate with rapid equilibrium changes, discrete rises in Ip, redistribution of the toroidal current, ion heating (Ti ~ 1 keV), transient drops in injector voltage, and apparent n = 1 line-tied kink activity at the injector. NIMROD simulations of high-field-side HI discharges in PEGASUS are in qualitative agreement, suggesting Ip buildup results from inward propagating toroidal current loops created by intermittent reconnection of injected current streams. Work supported by US DOE Grant DE-FG02-96ER54375.

Impact of Distribution Feeders that do not have Voltage Regulators on the number of Charged Electric Vehicles using IEEE 34 Bus Test Feeder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allehyani, Ahmed; Beshir, Mohammed

Voltage regulators help maintain an acceptable voltage profile for the system. This paper discusses the effect of installing voltage regulators to the system to fix the voltage drop resulting from the electrical vehicles loading increase when they are being charged. The effect will be studied in the afternoon, when the peak load occurs, using the IEEE 34 bus test feeder. First, only one spot node is used to charge the electric vehicles while a voltage regulator is present. Second, five spot nodes are loaded at the same time to charge the electric vehicles while voltage regulators are installed at eachmore » node. After that, the impact of electric vehicles on distribution feeders that do not have voltage regulators will appear.« less

Voltage transfer function as an optical method to characterize electrical properties of liquid crystal devices.

PubMed

Bateman, J; Proctor, M; Buchnev, O; Podoliak, N; D'Alessandro, G; Kaczmarek, M

2014-07-01

The voltage transfer function is a rapid and visually effective method to determine the electrical response of liquid crystal (LC) systems using optical measurements. This method relies on crosspolarized intensity measurements as a function of the frequency and amplitude of the voltage applied to the device. Coupled with a mathematical model of the device it can be used to determine the device time constants and electrical properties. We validate the method using photorefractive LC cells and determine the main time constants and the voltage dropped across the layers using a simple nonlinear filter model.

Improved Signal Chains for Readout of CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

2009-01-01

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

RF Noise Generation in High-Pressure Short-Arc DC Xenon Lamps

NASA Astrophysics Data System (ADS)

Minayeva, Olga; Doughty, Douglas

2007-10-01

Continuous direct current xenon arcs will generate RF noise under certain circumstance, which can lead to excessive electro- magnetic interference in systems that use these arcs as light sources. Phenomenological observations are presented for xenon arcs having arc gaps ˜1 mm, cold fill pressures of ˜2.5 MPa, and currents up to 30 amps. Using a loop antenna in the vicinity of an operating lamp, it is observed that as the current to the arc is lowered there is a reproducible threshold at which the RF noise generation begins. This threshold is accompanied by a small abrupt drop in voltage (˜0.2 volts). The RF emission appears in pulses ˜150 nsec wide separated by ˜300 nec - the pulse interval decreases with decreasing current. The properties of the RF emission as a function of arc parameters (such as pressure, arc gap, electrode design) will be discussed and a semi-quantitative model presented.

FLASH X-RAY (FXR) LINEAR INDUCTION ACCELERATOR (LIA) OPTIMIZATION Sensor Delay Correction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ong, M M; Houck, T L; Kreitzer, B R

2006-05-01

The radiographic goal of the FXR Optimization Project is to generate an x-ray pulse with peak energy of 19 MeV, spot-size of 1.5 mm, a dose of 500 rad, and duration of 60 ns. The electrical objectives are to generate a 3 kA electron-beam and refine our 16 MV accelerator so that the voltage does not vary more than 1%-rms. In a multi-cell linear induction accelerator, like FXR, the timing of the acceleration pulses relative to the beam is critical. The pulses must be timed optimally so that a cell is at full voltage before the beam arrives and doesmore » not drop until the beam passes. In order to stay within the energy-variation budget, the synchronization between the cells and beam arrival must be controlled to a couple of nanoseconds. Therefore, temporal measurements must be accurate to a fraction of a nanosecond. FXR Optimization Project developed a one-giga-sample per second (gs/s) data acquisition system to record beam sensor data. Signal processing algorithms were written to determine cell timing with an uncertainty of a fraction of a nanosecond. However, the uncertainty in the sensor delay was still a few nanoseconds. This error had to be reduced if we are to improve the quality of the electron beam. Two types of sensors are used to align the cell voltage pulse against the beam current. The beam current is measured with resistive-wall sensors. The cell voltages are read with capacitive voltage monitors. Sensor delays can be traced to two mechanisms: (1) the sensors are not co-located at the beam and cell interaction points, and (2) the sensors have different length jumper cables and other components that connect them to the standard-length coaxial cables of the data acquisition system. Using the physical locations and dimensions of the sensor components, and the dielectric constant of the materials, delay times were computed. Relative to the cell voltage, the beam current was theoretically reporting late by 7.7 ns. Two experiments were performed to verify and refine the sensor delay correction. In the first experiment, the beam was allowed to drift through a cell that was not pulsed. The beam induces a potential into the cell that is read by the voltage monitor. Analysis of the data indicated that the beam sensor signal was likely 7.1 ns late. In the second experiment, the beam current is calculated from the injector diode voltage that is the sum of the cell voltages. A 7 ns correction produced a very good match between the signals from the two types of sensors. For simplicity, we selected a correction factor that advanced the current signals by 7 ns. This should reduce the uncertainty in the temporal measurements to less than 1 ns.« less

Comparison of high speed DI-LIGBT structures

NASA Astrophysics Data System (ADS)

Sunkavalli, Ravishankar; Baliga, B. Jayant

1997-12-01

The performance of the DI segmented collector (SC)-LIGBT is compared to the collector shorted (CS)-LIGBT. The SC-LIGBT allows for adjusting the tradeoff between switching speed and on-state voltage drop by simply changing the P+ collector segment width during device layout. In contrast to previously reported junction isolated (JI) devices, the DI SC-LIGBT was observed to have a turnoff speed similar to the CS-LIGBT with a higher forward drop than the conventional LIGBT. The on-state performance of the integral diodes of the SC-LIGBTs was found to be superior to the integral diode of the CS-LIGBT. The integral diodes of both the CS and the SC-LIGBTs were found to have much superior switching characteristics compared to a lateral PiN diode at the expense of a higher on-state voltage drop. Thus, the superior switching characteristics of the integral diode in the SC-LIGBT complements its fast switching behavior making this device attractive for compact, high frequency, high efficient, power ICs.

Controlling charge on levitating drops.

PubMed

Hilger, Ryan T; Westphall, Michael S; Smith, Lloyd M

2007-08-01

Levitation technologies are used in containerless processing of materials, as microscale manipulators and reactors, and in the study of single drops and particles. Presented here is a method for controlling the amount and polarity of charge on a levitating drop. The method uses single-axis acoustic levitation to trap and levitate a single, initially neutral drop with a diameter between 400 microm and 2 mm. This drop is then charged in a controllable manner using discrete packets of charge in the form of charged drops produced by a piezoelectric drop-on-demand dispenser equipped with a charging electrode. The magnitude of the charge on the dispensed drops can be adjusted by varying the voltage applied to the charging electrode. The polarity of the charge on the added drops can be changed allowing removal of charge from the trapped drop (by neutralization) and polarity reversal. The maximum amount of added charge is limited by repulsion of like charges between the drops in the trap. This charging scheme can aid in micromanipulation and the study of charged drops and particles using levitation.

Resistive method for measuring the disintegration speed of Prince Rupert's drops

NASA Astrophysics Data System (ADS)

Bochkov, Mark; Gusenkova, Daria; Glushkov, Evgenii; Zotova, Julia; Zhabin, S. N.

2016-09-01

We have successfully applied the resistance grid technique to measure the disintegration speed in a special type of glass objects, widely known as Prince Rupert's drops. We use a fast digital oscilloscope and a simple electrical circuit, glued to the surface of the drops, to detect the voltage changes, corresponding to the breaks in the specific parts of the drops. The results obtained using this method are in good qualitative and quantitative agreement with theoretical predictions and previously published data. Moreover, the proposed experimental setup does not include any expensive equipment (such as a high-speed camera) and can therefore be widely used in high schools and universities.

Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode

NASA Astrophysics Data System (ADS)

Jia, Yun-Peng; Zhao, Bao; Yang, Fei; Wu, Yu; Zhou, Xuan; Li, Zhe; Tan, Jian

2015-12-01

The temperature dependences of forward voltage drop (VF) of the fast recovery diodes (FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones. Based on deep level transient spectroscopy (DLTS) measurements, a new level E6 (EC-0.376 eV) is found in the combined lifetime treated (CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested VF results of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD. Project supported by the Doctoral Fund of Ministry of Education of China (Grant No. 20111103120016) and the State Grid Corporation of China Program of Science and Technology, China (Grant No. 5455DW140003).

Plasma contactor research, 1990

NASA Technical Reports Server (NTRS)

Williams, John D.; Wilbur, Paul J.

1991-01-01

Emissive and Langmuir probes were used to measure plasma potential profiles, plasma densities, electron energy distributions, and plasma noise levels near a hollow cathode-based plasma contactor emitting electrons. The effects of electron emission current (100 to 1500 mA) and contactor flowrate (2 to 10 sccm (Xenon)) on these data are examined. Retarding potential analyzer (RPA) measurements showing that high energy ions generally stream from a contactor along with the electrons being emitted are also presented, and a mechanism by which this occurs is postulated. This mechanism, which involves a high rate of ionization induced between electrons and atoms flowing together from the hollow cathode orifice, results in a region of high positive space charge and high positive potential. Langmuir and RPA probe data suggests that both electrons and ions expand spherically from this potential hill region. In addition to experimental observations, a simple one-dimensional model which describes the electron emission process and predicts the phenomena just mentioned is presented and is shown to agree qualitatively with these observations. Experimental results of the first stage of bilateral cooperation with the Italian Institute of Interplanetary Space Physics (IFSI CNR) are presented. Sharp, well-defined double layers were observed downstream of a contactor collecting electrons from an ambient plasma created in the IFSI Facility. The voltage drop across these double layers was observed to increase with the current drawn from the ambient plasma. This observation, which was not as clear in previous IFSI tests conducted at higher neutral pressures, is in agreement with previous experimental observations made at both Colorado State University and NASA Lewis Research Center. Greater double layer voltage drops, multiple double layers, and higher noise levels in the region near the double layers were also observed when a magnetic field was imposed and oriented perpendicular to the line joining the contactor and simulator.

Ca currents activated by spontaneous firing and synaptic disinhibition in neurons of the cerebellar nuclei

PubMed Central

Zheng, Nan; Raman, Indira M.

2009-01-01

In neurons of the cerebellar nuclei, long-term potentiation of EPSCs is induced by high-frequency synaptic excitation by mossy fibers followed by synaptic inhibition by Purkinje cells. Induction requires activation of synaptic receptors as well as voltage-gated Ca channels. To examine how Purkinje-mediated inhibition of nuclear neurons affects Ca levels during plasticity-inducing stimuli, we have combined electrophysiology, Ca imaging, and pharmacology of cerebellar nuclear neurons in mouse cerebellar slices. We find that spontaneous firing generates tonic Ca signals in both somata and dendrites, which drop during 500-ms, 100-Hz trains of Purkinje IPSPs or hyperpolarizing steps. Although the presence of low-voltage-activated (T-type) Ca channels in nuclear neurons has fostered the inference that disinhibition activates these channels, synaptic inhibition with a physiological ECl (−75 mV) fails to hyperpolarize neurons sufficiently for T-type channels to recover substantially. Consequently, after IPSPs, Ca signals return to baseline, although firing is accelerated by ∼20 Hz for ∼300 ms. Only after hyperpolarizations beyond ECl does Ca rise gradually beyond baseline, as firing further exceeds spontaneous rates. Cd2+ (100 μM), which nearly eliminates L-type, N-type, P/Q-type, and R-type Ca currents while sparing about half the T-type current, prevents Ca changes during and after hyperpolarizations to ECl. Thus, high-frequency IPSPs in cerebellar nuclear neurons evoke little post-inhibitory current through T-type channels. Instead, inhibition regulates Ca levels simply by preventing action potentials, which usually permit Ca influx through high-voltage-activated channels. The decreases and restoration of Ca levels associated with Purkinje-mediated inhibition are likely to contribute to synaptic plasticity. PMID:19657035

Experimental study of low-temperature plasma of electrical discharges with liquid electrodes

NASA Astrophysics Data System (ADS)

Zheltukhin, Viktor; Gaisin, Almaz

2016-09-01

Results of the experimental research of discharge between the liquid jet cathode (LJC) and the metal anode are presented. The discharge was studied over the voltage range U = 100 - 600 V, discharge current range I = 0 . 1 - 0 . 25 A, external pressure range P =105 Pa, discharge power Pd = 10 - 150 W. We used the techniques of infrared thermography and spectral measurements. Schlieren's photography is applied for describing the processes in liquid and gas phase. Results of the experimental researches of discharge current-voltage characteristic (CVC), the surface temperature distribution both on the LJC and the metal anode, a spectral measurements are showed. Effects of action both of breakdown and discharge on the jet flow as well as on the air flow near the discharge are described. It is found that the discharge CVC has an ascending behavior due to increase of plasma current density. The discharge is generated on the borders between the LJC and the metal anode as well as along the LJC misshaping this one. It is established that both the convection streams and an electrolyte drops are formed during the discharge burn. It is found that the discharge temperature in the vicinity of electrode surface reaches T 348 K. The work was funded by RFBR, according to the research projects No.,14-01-0755.

Theoretical and experimental studies on ionic currents in nanopore-based biosensors.

PubMed

Liu, Lei; Li, Chu; Ma, Jian; Wu, Yingdong; Ni, Zhonghua; Chen, Yunfei

2014-12-01

Novel generation of analytical technology based on nanopores has provided possibilities to fabricate nanofluidic devices for low-cost DNA sequencing or rapid biosensing. In this paper, a simplified model was suggested to describe DNA molecule's translocation through a nanopore, and the internal potential, ion concentration, ionic flowing speed and ionic current in nanopores with different sizes were theoretically calculated and discussed on the basis of Poisson-Boltzmann equation, Navier-Stokes equation and Nernst-Planck equation by considering several important parameters, such as the applied voltage, the thickness and the electric potential distributions in nanopores. In this way, the basic ionic currents, the modulated ionic currents and the current drops induced by translocation were obtained, and the size effects of the nanopores were carefully compared and discussed based on the calculated results and experimental data, which indicated that nanopores with a size of 10 nm or so are more advantageous to achieve high quality ionic current signals in DNA sensing.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier.

PubMed

Yang, Jong-Ryul; Han, Seong-Tae; Baek, Donghyun

2017-09-09

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m² input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB.

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier

PubMed Central

Han, Seong-Tae; Baek, Donghyun

2017-01-01

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m2 input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB. PMID:28891927

Dynamic Response in Nanoelectrowetting on a Dielectric.

PubMed

Choudhuri, Jyoti Roy; Vanzo, Davide; Madden, Paul Anthony; Salanne, Mathieu; Bratko, Dusan; Luzar, Alenka

2016-09-27

Droplet spreading at an applied voltage underlies the function of tunable optical devices including adjustable lenses and matrix display elements. Faster response and the enhanced resolution motivate research toward miniaturization of these devices to nanoscale dimensions. The response of an aqueous nanodroplet to an applied field can differ significantly from macroscopic predictions. Understanding these differences requires characterization at the molecular level. We describe the equilibrium and nonequilibrium molecular dynamics simulations of nanosized aqueous droplets on a hydrophobic surface with the embedded concentric electrodes. Constant electrode potential is enforced by a rigorous account of the metal polarization. We demonstrate that the reduction of the equilibrium contact angle is commensurate to, and adjusts reversibly with, the voltage change. For a droplet with O(10) nm diameter, a typical response time to the imposition of the field is of O(10(2)) ps. Drop relaxation is about twice as fast when the field is switched off. The friction coefficient obtained from the rate of the drop relaxation on the nonuniform surface, decreases when the droplet approaches equilibrium from either direction, that is, by spreading or receding. The strong dependence of the friction on the surface hydrophilicity points to the dominance of the liquid-surface friction at the drop's perimeter as described in the molecular kinetic theory. This approach enables correct predictions of trends in dynamic responses associated with varied voltage or substrate material.

Advanced Measurement Devices for the Microgravity Electromagnetic Levitation Facility EML

NASA Technical Reports Server (NTRS)

Brillo, Jurgen; Fritze, Holger; Lohofer, Georg; Schulz, Michal; Stenzel, Christian

2012-01-01

This paper reports on two advanced measurement devices for the microgravity electromagnetic levitation facility (EML), which is currently under construction for the use onboard the "International Space Station (ISS)": the "Sample Coupling Electronics (SCE)" and the "Oxygen Sensing and Control Unit (OSC)". The SCE measures by a contactless, inductive method the electrical resistivity and the diameter of a spherical levitated metallic droplet by evaluating the voltage and electrical current applied to the levitation coil. The necessity of the OSC comes from the insight that properties like surface tension or, eventually, viscosity cannot seriously be determined by the oscillating drop method in the EML facility without knowing the conditions of the surrounding atmosphere. In the following both measurement devices are explained and laboratory test results are presented.

A numerical study on electrochemical transport of ions in calcium fluoride slag

NASA Astrophysics Data System (ADS)

Karimi-Sibaki, E.; Kharicha, A.; Wu, M.; Ludwig, A.

2016-07-01

Electrically resistive CaF 2-based slags are widely used in electroslag remelting (ESR) process to generate Joule heat for the melting of electrode. The electric current is conducted by ions (electrolyte) such as Ca +2 or F -, thus it is necessary to establish electrochemical models to study electrical behavior of slag. This paper presents a numerical model on electrochemical transport of ions in an arbitrary symmetrical (ZZ) and non-symmetrical (CaF2) stagnant electrolytes blocked by two parallel, planar electrodes. The dimensionless Poisson-Nernst-Planck (PNP) equations are solved to model electro-migration and diffusion of ions. The ions are considered to be inert that no Faradic reactions occur. Spatial variations of concentrations of ions, charge density and electric potential across the electrolyte are analyzed. It is shown that the applied potential has significant influence on the system response. At high applied voltage, the anodic potential drop near the electrode is significantly larger than cathodic potential drop in fully dissociated CaF2 electrolyte.

Power transmission cable development for the Space Station Freedom electrical power system

NASA Technical Reports Server (NTRS)

Schmitz, Gregory V.; Biess, John J.

1989-01-01

Power transmission cable is presently being evaluated under a NASA Lewis Research Center advanced development contract for application in the Space Station Freedom (SSF) electrical power system (EPS). Evaluation testing has been performed by TRW and NASA Lewis Research Center. The results of this development contract are presented. The primary cable design goals are to provide (1) a low characteristic inductance to minimize line voltage drop at 20 kHz, (2) electromagnetic compatibility control of the 20-kHz ac power current, (3) a physical configuration that minimizes ac resistance and (4) release of trapped air for corona-free operation.

LabVIEW Serial Driver Software for an Electronic Load

NASA Technical Reports Server (NTRS)

Scullin, Vincent; Garcia, Christopher

2003-01-01

A LabVIEW-language computer program enables monitoring and control of a Transistor Devices, Inc., Dynaload WCL232 (or equivalent) electronic load via an RS-232 serial communication link between the electronic load and a remote personal computer. (The electronic load can operate at constant voltage, current, power consumption, or resistance.) The program generates a graphical user interface (GUI) at the computer that looks and acts like the front panel of the electronic load. Once the electronic load has been placed in remote-control mode, this program first queries the electronic load for the present values of all its operational and limit settings, and then drops into a cycle in which it reports the instantaneous voltage, current, and power values in displays that resemble those on the electronic load while monitoring the GUI images of pushbuttons for control actions by the user. By means of the pushbutton images and associated prompts, the user can perform such operations as changing limit values, the operating mode, or the set point. The benefit of this software is that it relieves the user of the need to learn one method for operating the electronic load locally and another method for operating it remotely via a personal computer.

Single Crystal Diamond Needle as Point Electron Source.

PubMed

Kleshch, Victor I; Purcell, Stephen T; Obraztsov, Alexander N

2016-10-12

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Single Crystal Diamond Needle as Point Electron Source

NASA Astrophysics Data System (ADS)

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-10-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Drop Tower Facility at Queensland University of Technology

NASA Astrophysics Data System (ADS)

Plagens, Owen; Castillo, Martin; Steinberg, Theodore; Ong, Teng-Cheong

The Queensland University of Technology (QUT) Drop Tower Facility is a {raise.17exscriptstyle˜}2.1 second, 21.3 m fall, dual capsule drop tower system. The dual capsule comprises of an uncoupled exterior hollow drag shield that experiences drag by the ambient atmosphere with the experimental capsule falling within the drag shield. The dual capsule system is lifted to the top of the drop tower via a mechanical crane and the dropping process is initiated by the cutting of a wire coupling the experimental package and suspending the drag shield. The internal experimental capsule reaches the bottom of the drag shield floor just prior to the deceleration stage at the air bag and during this time experience gravity levels of {raise.17exscriptstyle˜}10textsuperscript{-6} g. The deceleration system utilizes an inflatable airbag where experimental packages can be designed to experience a maximum deceleration of {raise.17exscriptstyle˜}10textsuperscript{18} g for {raise.17exscriptstyle˜}0.1 seconds. The drag shield can house experimental packages with a maximum diameter of 0.8 m and height of 0.9 m. The drag shield can also be used in foam mode, where the walls are lined with foam and small experiments can be dropped completely untethered. This mode is generally used for the study of microsatellite manipulation. Payloads can be powered by on-board power systems with power delivered to the experiment until free fall occurs. Experimental data that can be collected includes but is not limited to video, temperature, pressure, voltage/current from the power supply, and triggering mechanisms outputs which are simultaneously collected via data logging systems and high speed video recording systems. Academic and commercial projects are currently under investigation at the QUT Drop Tower Facility and collaboration is openly welcome at this facility. Current research includes the study of heterogeneously burning metals in oxygen which is aimed at fire safety applications and identifying size distributions and morphologies of particles produced during the combustion of bulk metals. Materials produced via self-propagating high-temperature synthesis in microgravity are investigated to produce high electroluminescent materials and high efficient dye sensitized electrolyte materials. The rapid cooling and quenching of ZBLAN glass in a microgravity environment is studied to reduce crystallization in the glass. Convective pool boiling and nucleate bubble formation in nano-fluids is aimed at investigating heat transfer properties in these new materials which are masked by gravity. Novel carbon nanotubes are produced in low gravity via an arch discharge to investigate the formation mechanisms of these materials.

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

NASA Astrophysics Data System (ADS)

Alvarez, J.; Boutchich, M.; Kleider, J. P.; Teraji, T.; Koide, Y.

2014-09-01

The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy and confocal micro-Raman/photoluminescence imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040 cm-1). These latter bands are usually assigned to the vibrational modes involving boron impurities and its possible complexes that can electrically act as traps for charge carriers. Local current-voltage measurements performed at the hot-spots point out a trap-filled-limited current as the main conduction mechanism favouring the leakage current in the Schottky devices.

Calibration of PVDF Film Transducers for the Cavitation Impact Measurement

NASA Astrophysics Data System (ADS)

Hujer, Jan; Müller, Miloš

2018-06-01

This paper describes investigation of the influence of the protective layer thickness on the calibration sensitivity of PVDF films sensors for the cavitation impacts measurements. The PVDF film sensor is casted into an aluminium block. The drop ball method is used for the measurement of the relation between impact force and the voltage detected on the PVDF film sensor. The calibration constants are measured for three different protective layers thicknesses. Five different ball weights for 400 mm drop height are used to reach the required impact force range. The ball positions for the evaluation of the impact force are measured with a high speed camera. The voltage signal detected on the PVDF film clamps was measured with a high speed digitizer. The measured signals are analysed in LabVIEW Signal Express.

Project W-320, 241-C-106 sluicing electrical calculations, Volume 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bailey, J.W.

1998-08-07

This supporting document has been prepared to make the FDNW calculations for Project W-320, readily retrievable. These calculations are required: To determine the power requirements needed to power electrical heat tracing segments contained within three manufactured insulated tubing assemblies; To verify thermal adequacy of tubing assembly selection by others; To size the heat tracing feeder and branch circuit conductors and conduits; To size protective circuit breaker and fuses; and To accomplish thermal design for two electrical heat tracing segments: One at C-106 tank riser 7 (CCTV) and one at the exhaust hatchway (condensate drain). Contents include: C-Farm electrical heat tracing;more » Cable ampacity, lighting, conduit fill and voltage drop; and Control circuit sizing and voltage drop analysis for the seismic shutdown system.« less

Self-regulating proportionally controlled heating apparatus and technique

NASA Technical Reports Server (NTRS)

Strange, M. G. (Inventor)

1975-01-01

A self-regulating proportionally controlled heating apparatus and technique is provided wherein a single electrical resistance heating element having a temperature coefficient of resistance serves simultaneously as a heater and temperature sensor. The heating element is current-driven and the voltage drop across the heating element is monitored and a component extracted which is attributable to a change in actual temperature of the heating element from a desired reference temperature, so as to produce a resulting error signal. The error signal is utilized to control the level of the heater drive current and the actual heater temperature in a direction to reduce the noted temperature difference. The continuous nature of the process for deriving the error signal feedback information results in true proportional control of the heating element without the necessity for current-switching which may interfere with nearby sensitive circuits, and with no cyclical variation in the controlled temperature.

Intelligent automotive battery systems

NASA Astrophysics Data System (ADS)

Witehira, P.

A single power-supply battery is incompatible with modern vehicles. A one-cmbination 12 cell/12 V battery, developed by Power Beat International Limited (PBIL), is described. The battery is designed to be a 'drop in' replacement for existing batteries. The cell structures, however, are designed according to load function, i.e., high-current shallow-discharge cycles and low-current deep-discharge cycles. The preferred energy discharge management logic and integration into the power distribution network of the vehicle to provide safe user-friendly usage is described. The system is designed to operate transparent to the vehicle user. The integrity of the volatile high-current cells is maintained by temperature-sensitive voltage control and discharge management. The deep-cycle cells can be fully utilized without affecting startability under extreme conditions. Electric energy management synchronization with engine starting will provide at least 6% overall reduction in hydrocarbon emissions using an intelligent on-board power-supply technology developed by PBIL.

Triple Hybrid Energy Harvesting Interface Electronics

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. M. P. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2016-11-01

This study presents a novel triple hybrid system that combines simultaneously generated power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters for a relatively high power supply capability. In the proposed solution each harvesting source utilizes a distinct power management circuit that generates a DC voltage suitable for combining the three parallel supplies. The circuits are designed and implemented in 180 nm standard CMOS technology, and are terminated with a schottky diode to avoid reverse current flow. The harvested AC signal from the EM harvester is rectified with a self-powered AC-DC doubler, which utilizes active diode structures to minimize the forward- bias voltage drop. The PZT interface electronics utilizes a negative voltage converter as the first stage, followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The ultra-low voltage DC power harvested by the TE generator is stepped up through a charge-pump driven by an LC oscillator with fully- integrated center-tapped differential inductors. Test results indicate that hybrid energy harvesting circuit provides more than 1 V output for load resistances higher than 100 kΩ (10 μW) where the stand-alone harvesting circuits are not able to reach 1 V output. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

NASA Astrophysics Data System (ADS)

Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

2015-02-01

In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistor

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Biegel, Bryan A. (Technical Monitor)

2002-01-01

The threshold voltages of a carbon-nanotube (CNT) field-effect transistor (FET) are studied. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, and this makes the device characteristics quite unique. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and inversion and accumulation threshold voltages (V(sub Ti), and V(sub Ta)) are derived. V(sub Ti) of the CNTFETs has a much stronger doping dependence than that of the metal-oxide- semiconductor FETs, while V(sub Ta) of both devices depends weakly on doping with the same functional form.

A double-stage start-up structure to limit the inrush current used in current mode charge pump

NASA Astrophysics Data System (ADS)

Cong, Liu; Xinquan, Lai; Hanxiao, Du; Yuan, Chi

2016-06-01

A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range, fixed output and multimode operation is presented in this paper. As a widely utilized power source implement, a Li-battery is always used as the power supply for chips. Due to the internal resistance, a potential drop will be generated at the input terminal of the chip with an input current. A false shut down with a low supply voltage will happen if the input current is too large, leading to the degradation of the Li-battery's service life. To solve this problem, the inrush current is limited by introducing a new start-up state. All of the circuits have been implemented with the NUVOTON 0.6 μm CMOS process. The measurement results show that the inrush current can be limited below 1 A within all input supply ranges, and the power efficiency is higher than the conventional structure. Project supported by the National Natural Science Foundation of China (No. 61106026).

CVD facility electrical system captor/dapper study

DOE Office of Scientific and Technical Information (OSTI.GOV)

SINGH, G.

1999-10-28

Project W-441, CVD Facility Electrical System CAPTOWDAPPER Study validates Meier's hand calculations. This study includes Load flow, short circuit, voltage drop, protective device coordination, and transient motor starting (TMS) analyses.

Application of the electroosmotic effect for thrust generation

NASA Astrophysics Data System (ADS)

Hansen, Thomas Edward

The present work focuses on demonstrating the capabilities of electroosmotic pumps, (EOP) to generate thrust. An underwater glider was successfully propelled by electroosmosis for the first time published - at 0.85 inches per second. Asymmetric AC voltage pulsing proved to produce higher flow rates then equivalent DC pumps for the same average voltage. Ultra-short pulsing proved 100 nanosecond rise times in EOP are possible, which surpassed published predictions by three orders of magnitude. Theories behind efficiency losses of high power EOP were investigated. Direct measurement of effective voltage at the face of a membrane is the most accurate way to determine voltage drop across the electrolyte of an EOP. Forced convection lowered efficiency of the EOP for low voltages by preventing capacitance charging, but proved to prolong pump life during high power application.

The passive cable properties of hair cell stereocilia and their contribution to somatic capacitance measurements.

PubMed

Breneman, Kathryn D; Highstein, Stephen M; Boyle, Richard D; Rabbitt, Richard D

2009-01-01

Somatic measurements of whole-cell capacitance are routinely used to understand physiologic events occurring in remote portions of cells. These studies often assume the intracellular space is voltage-clamped. We questioned this assumption in auditory and vestibular hair cells with respect to their stereocilia based on earlier studies showing that neurons, with radial dimensions similar to stereocilia, are not always isopotential under voltage-clamp. To explore this, we modeled the stereocilia as passive cables with transduction channels located at their tips. We found that the input capacitance measured at the soma changes when the transduction channels at the tips of the stereocilia are open compared to when the channels are closed. The maximum capacitance is felt with the transducer closed but will decrease as the transducer opens due to a length-dependent voltage drop along the stereocilium length. This potential drop is proportional to the intracellular resistance and stereocilium tip conductance and can produce a maximum capacitance error on the order of fF for single stereocilia and pF for the bundle.

Simulating the Gradually Deteriorating Performance of an RTG

NASA Technical Reports Server (NTRS)

Wood, Eric G.; Ewell, Richard C.; Patel, Jagdish; Hanks, David R.; Lozano, Juan A.; Snyder, G. Jeffrey; Noon, Larry

2008-01-01

Degra (now in version 3) is a computer program that simulates the performance of a radioisotope thermoelectric generator (RTG) over its lifetime. Degra is provided with a graphical user interface that is used to edit input parameters that describe the initial state of the RTG and the time-varying loads and environment to which it will be exposed. Performance is computed by modeling the flows of heat from the radioactive source and through the thermocouples, also allowing for losses, to determine the temperature drop across the thermocouples. This temperature drop is used to determine the open-circuit voltage, electrical resistance, and thermal conductance of the thermocouples. Output power can then be computed by relating the open-circuit voltage and the electrical resistance of the thermocouples to a specified time-varying load voltage. Degra accounts for the gradual deterioration of performance attributable primarily to decay of the radioactive source and secondarily to gradual deterioration of the thermoelectric material. To provide guidance to an RTG designer, given a minimum of input, Degra computes the dimensions, masses, and thermal conductances of important internal structures as well as the overall external dimensions and total mass.

Dynamic magnetoelectric effect in ferromagnet/superconductor tunnel junctions.

PubMed

Trif, Mircea; Tserkovnyak, Yaroslav

2013-08-23

We study the magnetization dynamics in a ferromagnet/insulator/superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and nonmonotonically with the precessional frequency, and can be enhanced significantly by the superconducting correlations. For frequencies much smaller or much larger than the superconducting gap, the voltage drops to zero, while when these two energy scales are comparable, the voltage is peaked at a value determined by the driving frequency. We comment on the potential utilization of the effect for the low-temperature spatially resolved spectroscopy of magnetic dynamics.

Analysis of transient state in HTS tapes under ripple DC load current

NASA Astrophysics Data System (ADS)

Stepien, M.; Grzesik, B.

2014-05-01

The paper concerns the analysis of transient state (quench transition) in HTS tapes loaded with the current having DC component together with a ripple component. Two shapes of the ripple were taken into account: sinusoidal and triangular. Very often HTS tape connected to a power electronic current supply (i.e. superconducting coil for SMES) that delivers DC current with ripples and it needs to be examined under such conditions. Additionally, measurements of electrical (and thermal) parameters under such ripple excitation is useful to tape characterization in broad range of load currents. The results presented in the paper were obtained using test bench which contains programmable DC supply and National Instruments data acquisition system. Voltage drops and load currents were measured vs. time. Analysis of measured parameters as a function of the current was used to tape description with quench dynamics taken into account. Results of measurements were also used to comparison with the results of numerical modelling based on FEM. Presented provisional results show possibility to use results of measurements in transient state to prepare inverse models of superconductors and their detailed numerical modelling.

Circuit analysis on the inductance evolution based on electrical signal from various type plasma focus device

NASA Astrophysics Data System (ADS)

Mohamad, Saiful Najmee; Ismail, Fairuz Diana; Noorden, Ahmad Fakhrurrazi Ahmad; Haider, Zuhaib; Ali, Jalil

2017-03-01

Numerous configurations of plasma focus devices (PFD) have been introduced around the globe. The distinct electrode configuration of the PFD will give out different inductance profile. A circuit analysis has been done to study on the significant difference between the inductance evolution in a coaxial discharge based on various published results of PFD. The discharge current signal, tube voltage and current derivative of the particular shots from distinct PFD was digitized and analyze. The investigation was piloted for three different types of PFD. It was observed that there is a significant difference for the normalize inductance profile during the discharge between the individual PFD with different electrode configuration. The depletion of the radial start current with the normalised inductance development for Mather type (PF-1000) is found to be 25.9% from static discharge. The current depletion continues to drop 1.1% and 1.3% more for a Spherical type (PNK-13) and Filippov type (PF-3) respectively.

The origin of dispersion of magnetoresistance of a domain wall spin valve

NASA Astrophysics Data System (ADS)

Sato, Jun; Matsushita, Katsuyoshi; Imamura, Hiroshi

2010-01-01

We theoretically study the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nanocontact which is experimentally fabricated as current-confined-path (CCP) structure in a nano-oxide-layer (NOL). We solve the non-collinear spin diffusion equation by using the finite element method and calculate the MR ratio by evaluating the additional voltage drop due to the spin accumulation. We investigate the origin of dispersion of magnetoresistance by considering the effect of randomness of the size and distribution of the nanocontacts in the NOL. It is observed that the effect of randomness of the contact size is much larger than that of the contact distribution. Our results suggest that the origin of dispersion of magnetoresistance observed in the experiments is the randomness of the size of the nanocontacts in the NOL.

Stationary multifaceted asymmetric radiation from the edge and improved confinement mode in a superconducting tokamak.

PubMed

Gao, X; Xie, J K; Wan, Y X; Ushigusa, K; Wan, B N; Zhang, S Y; Li, J; Kuang, G L

2002-01-01

Stationary multifaceted asymmetric radiation from the edge (MARFE) is studied by gas-puffing feedback control according to an empirical MARFE critical density ( approximately 1.8 x 10(13) cm(-3)) in the HT-7 Ohmic discharges (where the plasma current I(p) is about 170 kA, loop voltage V(loop)=2-3 V, toroidal field B(T)=1.9 T, and Z(eff)=3-4). It is observed that an improved confinement mode characterized by D(alpha) line emissions drops and the line-averaged density increase is triggered in the stationary MARFE discharges. The mode is not a symmetric "detachment" state, because the quasi-steady-state poloidally asymmetric radiation (e.g., C III line emissions) still exists. This phenomenon has not been predicted by the current MARFE theory.

Numerical investigation on the dynamics and evolution mechanisms of multiple-current-pulse behavior in homogeneous helium dielectric-barrier discharges at atmospheric pressure

NASA Astrophysics Data System (ADS)

Zhang, Yuhui; Ning, Wenjun; Dai, Dong

2018-03-01

A systematic investigation on the dynamics and evolution mechanisms of multiple-current-pulse (MCP) behavior in homogeneous dielectric barrier discharge (HDBD) is carried out via fluid modelling. Inspecting the simulation results, two typical discharge regimes, namely the MCP-Townsend regime and MCP-glow regime, are found prevailing in MCP discharges, each with distinctive electrical and dynamic properties. Moreover, the evolution of MCP behavior with external parameters altering are illustrated and explicitly discussed. It is revealed that the discharge undergoes some different stages as external parameters vary, and the discharge in each stage follows a series of distinctive pattern in morphological characteristics and evolution trends. Among those stages, the pulse number per half cycle is perceived to observe non-monotonic variations with applied voltage amplitude (Vam) and gap width (dg) increasing, and a merging effect among pulses, mainly induced by the enhanced contribution of sinusoidal component to the total current, is considered responsible for such phenomenon. The variation of incipient discharge peak phase (Φpm) is dominated by the value of Vam as well as the proportion of total applied voltage that drops across the gas gap. Moreover, an abnormal, dramatic elevation in Jpm with dg increasing is observed, which could be evinced by the strengthened glow discharge structure and therefore enhanced space charge effect.

Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

NASA Astrophysics Data System (ADS)

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

2016-03-01

We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

Cadmium (II) removal mechanisms in microbial electrolysis cells.

PubMed

Colantonio, Natalie; Kim, Younggy

2016-07-05

Cadmium is a toxic heavy metal, causing serious environmental and human health problems. Conventional methods for removing cadmium from wastewater are expensive and inefficient for low concentrations. Microbial electrolysis cells (MECs) can simultaneously treat wastewater, produce hydrogen gas, and remove heavy metals with low energy requirements. Lab-scale MECs were operated to remove cadmium under various electric conditions: applied voltages of 0.4, 0.6, 0.8, and 1.0 V; and a fixed cathode potential of -1.0 V vs. Ag/AgCl. Regardless of the electric condition, rapid removal of cadmium was demonstrated (50-67% in 24 h); however, cadmium concentration in solution increased after the electric current dropped with depleted organic substrate under applied voltage conditions. For the fixed cathode potential, the electric current was maintained even after substrate depletion and thus cadmium concentration did not increase. These results can be explained by three different removal mechanisms: cathodic reduction; Cd(OH)2 precipitation; and CdCO3 precipitation. When the current decreased with depleted substrates, local pH at the cathode was no longer high due to slowed hydrogen evolution reaction (2H(+)+2e(-)→H2); thus, the precipitated Cd(OH)2 and CdCO3 started dissolving. To prevent their dissolution, sufficient organic substrates should be provided when MECs are used for cadmium removal. Copyright © 2016 Elsevier B.V. All rights reserved.

Method of removal of heavy metal from molten salt in IFR fuel pyroprocessing

DOEpatents

Gay, E.C.

1995-10-03

An electrochemical method is described for separating heavy metal values from a radioactive molten salt including Li halide at temperatures of about 500 C. The method comprises positioning a solid Li--Cd alloy anode in the molten salt containing the heavy metal values, positioning a Cd-containing cathode or a solid cathode positioned above a catch crucible in the molten salt to recover the heavy metal values, establishing a voltage drop between the anode and the cathode to deposit material at the cathode to reduce the concentration of heavy metals in the salt, and controlling the deposition rate at the cathode by controlling the current between the anode and cathode. 3 figs.

Method of removal of heavy metal from molten salt in IFR fuel pyroprocessing

DOEpatents

Gay, Eddie C.

1995-01-01

An electrochemical method of separating heavy metal values from a radioactive molten salt including Li halide at temperatures of about 500.degree. C. The method comprises positioning a solid Li--Cd alloy anode in the molten salt containing the heavy metal values, positioning a Cd-containing cathode or a solid cathode positioned above a catch crucible in the molten salt to recover the heavy metal values, establishing a voltage drop between the anode and the cathode to deposit material at the cathode to reduce the concentration of heavy metals in the salt, and controlling the deposition rate at the cathode by controlling the current between the anode and cathode.

Analog bus driver and multiplexer

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Hancock, Bruce (Inventor); Cunningham, Thomas J. (Inventor)

2012-01-01

For a source-follower signal chain, the ohmic drop in the selection switch causes unacceptable voltage offset, non-linearity, and reduced small signal gain. For an op amp signal chain, the required bias current and the output noise rises rapidly with increasing the array format due to a rapid increase in the effective capacitance caused by the Miller effect boosting up the contribution of the bus capacitance. A new switched source-follower signal chain circuit overcomes limitations of existing op-amp based or source follower based circuits used in column multiplexers and data readout. This will improve performance of CMOS imagers, and focal plane read-out integrated circuits for detectors of infrared or ultraviolet light.

Droplet Velocity Measurement Based on Dielectric Layer Thickness Variation Using Digital Microfluidic Devices.

PubMed

Zulkepli, Siti Noor Idora Syafinaz; Hamid, Nor Hisham; Shukla, Vineeta

2018-05-08

In recent years, the number of interdisciplinary research works related to the development of miniaturized systems with integrated chemical and biological analyses is increasing. Digital microfluidic biochips (DMFBs) are one kind of miniaturized systems designed for conducting inexpensive, fast, convenient and reliable biochemical assay procedures focusing on basic scientific research and medical diagnostics. The role of a dielectric layer in the digital microfluidic biochips is prominent as it helps in actuating microliter droplets based on the electrowetting-on-dielectric (EWOD) technique. The advantages of using three different material layers of dielectric such as parafilm, polytetrafluoroethylene (PTFE) and ethylene tetrafluoroethylene (ETFE) were reported in the current work. A simple fabrication process of a digital microfluidic device was performed and good results were obtained. The threshold of the actuation voltage was determined for all dielectric materials of varying thicknesses. Additionally, the OpenDrop device was tested by utilizing a single-plate system to transport microliter droplets for a bioassay operation. With the newly proposed fabrication methods, these dielectric materials showed changes in contact angle and droplet velocity when the actuation voltage was applied. The threshold actuation voltage for the dielectric layers of 10⁻13 μm was 190 V for the open plate DMFBs.

Dye based photodiodes for solar energy applications

NASA Astrophysics Data System (ADS)

Mensah-Darkwa, K.; Ocaya, R.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

2017-10-01

Coumarin (CO) doped methylene blue (MB) organic photo-devices were fabricated. The CO-doped MB (0.00, 0.01, 0.03, 0.05, 0.1 wt% CO) were coated onto the surface of a p-type Si substrate by drop casting method. Some electrical parameters of the devices have been examined by current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The fabricated devices had excellent rectifying properties. The diode exhibits a non-ideal diode behavior due to the series resistance and interface layer. The ideality factor, the barrier height, and the series resistance values of the diode as a function of doping and light illumination have been estimated using modified Cheung-Cheung and Norde's method. The highest I photo/ I dark photosensitivity of 5606 was observed for the diode having 0.01 CO doping at 100 mW/cm2 under -3 V. Furthermore, change of capacitance and conductance measurements with frequency is related to the existence of interface states. A maximum power conversion efficiency of 2.4% is estimated for the fabricated devices. The results reveal that coumarin-doped methylene blue/ p-Si heterojunction can be used as a photodiode in optoelectronic applications. It is also usable in low-power photovoltaic applications.

Investigation of surface charge density on solid-liquid interfaces by modulating the electrical double layer.

PubMed

Moon, Jong Kyun; Song, Myung Won; Pak, Hyuk Kyu

2015-05-20

A solid surface in contact with water or aqueous solution usually carries specific electric charges. These surface charges attract counter ions from the liquid side. Since the geometry of opposite charge distribution parallel to the solid-liquid interface is similar to that of a capacitor, it is called an electrical double layer capacitor (EDLC). Therefore, there is an electrical potential difference across an EDLC in equilibrium. When a liquid bridge is formed between two conducting plates, the system behaves as two serially connected EDLCs. In this work, we propose a new method for investigating the surface charge density on solid-liquid interfaces. By mechanically modulating the electrical double layers and simultaneously applying a dc bias voltage across the plates, an ac electric current can be generated. By measuring the voltage drop across a load resistor as a function of bias voltage, we can study the surface charge density on solid-liquid interfaces. Our experimental results agree very well with the simple equivalent electrical circuit model proposed here. Furthermore, using this method, one can determine the polarity of the adsorbed state on the solid surface depending on the material used. We expect this method to aid in the study of electrical phenomena on solid-liquid interfaces.

Riata silicone defibrillation lead with normal electrical measures at routine ambulatory check: The role of high-voltage shock testing

PubMed Central

De Maria, Elia; Borghi, Ambra; Bonetti, Lorenzo; Fontana, Pier Luigi; Cappelli, Stefano

2016-01-01

AIM To describe our experience with shock testing for the evaluation of patients with Riata™ leads. METHODS Among 51 patients with normal baseline electrical parameters, 20 died during follow-up. Of the remaining 31 patients, 15 underwent the test: In 10 cases a defibrillation testing with ventricular fibrillation (VF) induction and in 5 cases a R-wave-synchronized shock (> 20 J, without inducing VF). The test was performed under sedation with Midazolam. RESULTS Twelve patients (80%) had a normal behavior during shock testing: In 8 cases induced VF was correctly detected and treated; in 4 cases of R-wave-synchronized shock electrical parameters remained stable and normal. Three patients (20%) failed the test. One patient with externalized conductors showed a sudden drop of high-voltage impedance (< 10 Ohm) after a 25 J R-wave-synchronized shock. Two other patients with externalized conductors, undergoing defibrillation testing, showed a short-circuit during shock delivery and the implantable cardioverter defibrillator was unable to interrupt VF. CONCLUSION In Riata™ leads the delivery of a low current during routine measurement of high-voltage impedance may not reveal a small short circuit, that can only be evident by attempting to deliver a true shock, either for spontaneous arrhythmias or in the context of a shock testing. PMID:27957252

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u}more » is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.« less

Quench dynamics in superconducting nanojunctions: Metastability and dynamical Yang-Lee zeros

NASA Astrophysics Data System (ADS)

Souto, R. Seoane; Martín-Rodero, A.; Yeyati, A. Levy

2017-10-01

We study the charge transfer dynamics following the formation of a phase or voltage biased superconducting nanojunction using a full counting statistics analysis. We demonstrate that the evolution of the zeros of the generating function allows one to identify the population of different many body states much in the same way as the accumulation of Yang-Lee zeros of the partition function in equilibrium statistical mechanics is connected to phase transitions. We give an exact expression connecting the dynamical zeros to the charge transfer cumulants and discuss when an approximation based on "dominant" zeros is valid. We show that, for generic values of the parameters, the system gets trapped into a metastable state characterized by a nonequilibrium population of the many body states which is dependent on the initial conditions. We study in particular the effect of the switching rates in the dynamics showing that, in contrast to intuition, the deviation from thermal equilibrium increases for the slower rates. In the voltage biased case the steady state is reached independent of the initial conditions. Our method allows us to obtain accurate results for the steady state current and noise in quantitative agreement with steady state methods developed to describe the multiple Andreev reflections regime. Finally, we discuss the system dynamics after a sudden voltage drop showing the possibility of tuning the many body states population by an appropriate choice of the initial voltage, providing a feasible experimental way to access the quench dynamics and control the state of the system.

Direct detection of cysteine using functionalized BaTiO3 nanoparticles film based self-powered biosensor.

PubMed

Selvarajan, Sophia; Alluri, Nagamalleswara Rao; Chandrasekhar, Arunkumar; Kim, Sang-Jae

2017-05-15

Simple, novel, and direct detection of clinically important biomolecules have continuous demand among scientific community as well as in market. Here, we report the first direct detection and facile fabrication of a cysteine-responsive, film-based, self-powered device. NH 2 functionalized BaTiO 3 nanoparticles (BT-NH 2 NPs) suspended in a three-dimensional matrix of an agarose (Ag) film, were used for cysteine detection. BaTiO 3 nanoparticles (BT NPs) semiconducting as well as piezoelectric properties were harnessed in this study. The changes in surface charge properties of the film with respect to cysteine concentrations were determined using a current-voltage (I-V) technique. The current response increased with cysteine concentration (linear concentration range=10µM-1mM). Based on the properties of the composite (BT/Ag), we created a self-powered cysteine sensor in which the output voltage from a piezoelectric nanogenerator was used to drive the sensor. The potential drop across the sensor was measured as a function of cysteine concentrations. Real-time analysis of sensor performance was carried out on urine samples by non-invasive method. This novel sensor demonstrated good selectivity, linear concentration range and detection limit of 10µM; acceptable for routine analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

Single Crystal Diamond Needle as Point Electron Source

PubMed Central

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-01-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2–0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics. PMID:27731379

Development of membrane electrode assembly for high temperature proton exchange membrane fuel cell by catalyst coating membrane method

NASA Astrophysics Data System (ADS)

Liang, Huagen; Su, Huaneng; Pollet, Bruno G.; Pasupathi, Sivakumar

2015-08-01

Membrane electrode assembly (MEA), which contains cathode and anode catalytic layer, gas diffusion layers (GDL) and electrolyte membrane, is the key unit of a PEMFC. An attempt to develop MEA for ABPBI membrane based high temperature (HT) PEMFC is conducted in this work by catalyst coating membrane (CCM) method. The structure and performance of the MEA are examined by scanning electron microscopy (SEM), electrochemical impedance spectroscopy (EIS) and I-V curve. Effects of the CCM preparation method, Pt loading and binder type are investigated for the optimization of the single cell performance. Under 160 °C and atmospheric pressure, the peak power density of the MEA, with Pt loading of 0.5 mg cm-2 and 0.3 mg cm-2 for the cathode and the anode, can reach 277 mW cm-2, while a current density of 620 A cm-2 is delivered at the working voltage of 0.4 V. The MEA prepared by CCM method shows good stability operating in a short term durability test: the cell voltage maintained at ∼0.45 V without obvious drop when operated at a constant current density of 300 mA cm-2 and 160 °C under ambient pressure for 140 h.

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

NASA Astrophysics Data System (ADS)

Akyol, Fatih; Zhang, Yuewei; Krishnamoorthy, Sriram; Rajan, Siddharth

2017-12-01

We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04 V at 5 kA/cm2 and a differential resistance of 6.51 × 10-5 Ω·cm2 at 3 kA/cm2 were obtained. The tunnel junction design with n++-GaN (Si: 5 × 1020 cm-3)/3 nm p++-In0.12Ga0.88N (Mg: 1.5 × 1020 cm-3)/p++-GaN (Mg: 5 × 1020 cm-3) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue-transparent light-emitting diodes.

Harvesting energy from low-frequency excitations through alternate contacts between water and two dielectric materials.

PubMed

Yu, Jian; Ma, Enze; Ma, Tianwei

2017-12-07

Recent studies have demonstrated the benefits of water-dielectric interfaces in electrostatic energy harvesting. Most efforts have been focused on extracting the kinetic energy from the motions of water drops on hydrophobic surfaces, and thus, the resulting schemes inherently prefer cases where the water drops move at a high speed, or vibrate at a high frequency. Here we report a method for directly harvesting ambient mechanical energy as electric potential energy through water droplets by making alternate contacts with CYTOP and PTFE thin films. Because CYTOP and PTFE acquire significantly different surface charge densities during contact with water, such a difference can be utilized to effectively generate electricity. We demonstrate this concept using prototype devices fabricated on silicon substrates with a simple procedure. In the experiments conducted, a water drop of 400 μL alone could generate a peak open-circuit voltage of 42 V under a 0.25 Hz vibration. Under a 2.5 Hz vibration, the peak open-circuit voltage reached 115 V under an external bias of 8 V. The demonstrated efficiency is orders of magnitude higher than those of existing devices of similar dimensions.

Complementary Barrier Infrared Detector (CBIRD) Contact Methods

NASA Technical Reports Server (NTRS)

Ting, David Z.; Hill, Cory J.; Gunapala, Sarath D.

2013-01-01

The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

Inelastic deformation and damage at high temperature

NASA Astrophysics Data System (ADS)

Krempl, E.

1992-06-01

Combined experimental and theoretical investigations into the inelastic deformation and damage behavior of engineering alloys at elevated temperatures are being pursued. The analysis of previously performed strain rate change and relaxation tests on modified 9Cr-1Mo steel showed the need for inclusion of a recovery of state term in the growth laws for the state variables of the viscoplasticity theory based on overstress (VBO). Recovery of state terms were introduced and the experimental results were satisfactorily simulated. The finite deformation theory of VBO has been developed further to include a convected derivative rationale for the choice of the objective stress rate. The reversing direct current voltage drop measurements during low cycle fatigue at elevated temperature were improved. A passive filter bank and new positioning devices for the coils were installed. Tests at 650 C and lasting several days showed excessive, uncontrollable temperature changes. It was decided to drop the test temperature to 538 C which is close to the operating temperature of type 304 stainless steel. The temperature fluctuations in torsion tests were within +/- 3 C which was considered satisfactory.

Power conversion apparatus and method

DOEpatents

Su, Gui-Jia [Knoxville, TN

2012-02-07

A power conversion apparatus includes an interfacing circuit that enables a current source inverter to operate from a voltage energy storage device (voltage source), such as a battery, ultracapacitor or fuel cell. The interfacing circuit, also referred to as a voltage-to-current converter, transforms the voltage source into a current source that feeds a DC current to a current source inverter. The voltage-to-current converter also provides means for controlling and maintaining a constant DC bus current that supplies the current source inverter. The voltage-to-current converter also enables the current source inverter to charge the voltage energy storage device, such as during dynamic braking of a hybrid electric vehicle, without the need of reversing the direction of the DC bus current.

Electric field effects on current–voltage relationships in microfluidic channels presenting multiple working electrodes in the weak-coupling limit

DOE PAGES

Contento, Nicholas M.; Bohn, Paul W.

2014-05-23

While electrochemical methods are well suited for lab-on-a-chip applications, reliably coupling multiple, electrode-controlled processes in a single microfluidic channel remains a considerable challenge, because the electric fields driving electrokinetic flow make it difficult to establish a precisely known potential at the working electrode(s). The challenge of coupling electrochemical detection with microchip electrophoresis is well known; however, the problem is general, arising in other multielectrode arrangements with applications in enhanced detection and chemical processing. Here, we study the effects of induced electric fields on voltammetric behavior in a microchannel containing multiple in-channel electrodes, using a Fe(CN) 6 3/4- model system. Whenmore » an electric field is induced by applying a cathodic potential at one inchannel electrode, the half-wave potential (E 1/2) for the oxidation of ferrocyanide at an adjacent electrode shifts to more negative potentials. The E 1/2 value depends linearly on the electric field current at a separate in-channel electrode. The observed shift in E 1/2 is quantitatively described by a model, which accounts for the change in solution potential caused by the iR drop along the length of the microchannel. The model, which reliably captures changes in electrode location and solution conductivity, apportions the electric field potential between iR drop and electrochemical potential components, enabling the study of microchannel electric field magnitudes at low applied potentials. In the system studied, the iR component of the electric field potential increases exponentially with applied current before reaching an asymptotic value near 80 % of the total applied potential. The methods described will aid in the development and interpretation of future microchip electrochemistry methods, particularly those that benefit from the coupling of electrokinetic and electrochemical phenomena at low voltages.« less

Effect of cathode cooling efficiency and oxygen plasma gas pressure on the hafnium cathode wall temperature

NASA Astrophysics Data System (ADS)

Ashtekar, Koustubh; Diehl, Gregory; Hamer, John

2012-10-01

The hafnium cathode is widely used in DC plasma arc cutting (PAC) under an oxygen gas environment to cut iron and iron alloys. The hafnium erosion is always a concern which is controlled by the surface temperature. In this study, the effect of cathode cooling efficiency and oxygen gas pressure on the hafnium surface temperature are quantified. The two layer cathode sheath model is applied on the refractive hafnium surface while oxygen species (O2, O, O+, O++, e-) are considered within the thermal dis-equilibrium regime. The system of non-linear equations comprising of current density balance, heat flux balance at both the cathode surface and the sheath-ionization layer is coupled with the plasma gas composition solver. Using cooling heat flux, gas pressure and current density as inputs; the cathode wall temperature, electron temperature, and sheath voltage drop are calculated. Additionally, contribution of emitted electron current (Je) and ions current (Ji) to the total current flux are estimated. Higher gas pressure usually reduces Ji and increases Je that reduces the surface temperature by thermionic cooling.

Focal length hysteresis of a double-liquid lens based on electrowetting

NASA Astrophysics Data System (ADS)

Peng, Runling; Wang, Dazhen; Hu, Zhiwei; Chen, Jiabi; Zhuang, Songlin

2013-02-01

In this paper, an extended Young equation especially suited for an ideal cylindrical double-liquid variable-focus lens is derived by means of an energy minimization method. Based on the extended Young equation, a kind of focal length hysteresis effect is introduced into the double-liquid variable-focus lens. Such an effect can be explained theoretically by adding a force of friction to the tri-phase contact line. Theoretical analysis shows that the focal length at a particular voltage can be different depending on whether the applied voltage is increasing or decreasing, that is, there is a focal length hysteresis effect. Moreover, the focal length at a particular voltage must be larger when the voltage is rising than when it is dropping. These conclusions are also verified by experiments.

The plasmatron: Advanced mode thermionic energy conversion

NASA Technical Reports Server (NTRS)

Hansen, L. K.; Hatch, G. L.; Rasor, N. S.

1976-01-01

A theory of the plasmatron was developed. Also, a wide range of measurements were obtained with two versatile, research devices. To gain insight into plasmatron performance, the experimental results are compared with calculations based on the theoretical model of plasmatron operation. Results are presented which show that the plasma arc drop of the conventional arc (ignited) mode converter can be suppressed by use of an auxiliary ion source. The improved performance, however, is presently limited to low current densities because of voltage losses due to plasma resistance. This resistance loss could be suppressed by an increase in the plasma electron temperature or a decrease in spacing. Plasmatron performance characteristics for both argon and cesium are reported. The argon plasmatron has superior performance. Results are also presented for magnetic cutoff effects and for current distributing effects. These are shown to be important factors for the design of practical devices.

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Synthesis of polymer nanostructures with conductance switching properties

DOEpatents

Su, Kai; Nuraje, Nurxat; Zhang, Lingzhi; Matsui, Hiroshi; Yang, Nan Loh

2015-03-03

The present invention is directed to crystalline organic polymer nanoparticles comprising a conductive organic polymer; wherein the crystalline organic polymer nanoparticles have a size of from 10 nm to 200 nm and exhibits two current-voltage states: (1) a high resistance current-voltage state, and (2) a low resistance current-voltage state, wherein when a first positive threshold voltage (V.sub.th1) or higher positive voltage, or a second negative threshold voltage (V.sub.th2) or higher negative voltage is applied to the nanoparticle, the nanoparticle exhibits the low-resistance current-voltage state, and when a voltage less positive than the first positive threshold voltage or a voltage less negative than the second negative threshold voltage is applied to the nanoparticle, the nanoparticle exhibits the high-resistance current-voltage state. The present invention is also directed methods of manufacturing the nanoparticles using novel interfacial oxidative polymerization techniques.

Device for monitoring cell voltage

DOEpatents

Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

2012-08-21

A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

Novel Driving Method for Two-Dimensional and Three-Dimensional Switchable Active Matrix Organic Light-Emitting Diode Displays for Emission and Programming Time Extension

NASA Astrophysics Data System (ADS)

In, Hai-Jung; Kwon, Oh-Kyong

2012-03-01

A novel driving method for two-dimensional (2D) and three-dimensional (3D) switchable active matrix organic light-emitting diode (AMOLED) displays is proposed to extend emission time and data programming time during 3D display operation. The proposed pixel consists of six thin-film transistors (TFTs) and two capacitors, and the aperture ratio of the pixel is 45.8% under 40-in. full-high-definition television condition. By increasing emission time and programming time, the flicker problem can be reduced and the lifetime of AMOLED displays can be extended owing to the decrease in emission current density. Simulation results show that the emission current error range from -0.4 to 1.6% is achieved when the threshold voltage variation of driving TFTs is in the range from -1.0 to 1.0 V, and the emission current error is 1.0% when the power line IR-drop is 2.0 V.

Charge storage in β-FeSi2 nanoparticles

NASA Astrophysics Data System (ADS)

Theis, Jens; Bywalez, Robert; Küpper, Sebastian; Lorke, Axel; Wiggers, Hartmut

2015-02-01

We report on the observation of a surprisingly high specific capacitance of β-FeSi2 nanoparticle layers. Lateral, interdigitated capacitor structures were fabricated on thermally grown silicon dioxide and covered with β-FeSi2 particles by drop or spin casting. The β-FeSi2-nanoparticles, with crystallite sizes in the range of 10-30 nm, were fabricated by gas phase synthesis in a hot wall reactor. Compared to the bare electrodes, the nanoparticle-coated samples exhibit a 3-4 orders of magnitude increased capacitance. Time-resolved current voltage measurements show that for short times (seconds to minutes), the material is capable of storing up to 1 As/g at voltages of around 1 V. The devices are robust and exhibit long-term stability under ambient conditions. The specific capacitance is highest for a saturated relative humidity, while for a relative humidity below 40% the capacitance is almost indistinguishable from a nanoparticle-free reference sample. The devices work without the need of a fluid phase, the charge storing material is abundant and cost effective, and the sample design is easy to fabricate.

Survivability of Autonomous Microgrid during Overload Events

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Wei; Lasseter, Robert H.; Khalsa, Amrit S.

Grid-forming sources are voltage sources that draw necessary currents to meet any load changes. A load step can cause part or all of these sources to become overloaded in a microgrid. This paper presents an overload mitigation controller that addresses the two overload issues in a microgrid by actively controlling the sources’ frequency. When part of the sources in a microgrid is overloaded, the controller autonomously transfers the extra load to other sources by rapidly reducing its frequency. The frequency difference between sources during transient results in a change of phase angle, which redistributes the power flow. When all sourcesmore » in a microgrid are overloaded, each source keeps dropping the frequency. Therefore, under frequency load shedding can be used to trip the non-critical loads resulting in the survival of microgrid. The advantages of these concepts are that communications between sources are not needed during transient, and the robust voltage control is maintained. Lastly, simulation and field tests from CERTS/AEP microgrid test site verify that the control strategy is effective in both purely inverter-based microgrids and inverter & generator mixed microgrids.« less

Survivability of Autonomous Microgrid during Overload Events

DOE PAGES

Du, Wei; Lasseter, Robert H.; Khalsa, Amrit S.

2018-04-23

Grid-forming sources are voltage sources that draw necessary currents to meet any load changes. A load step can cause part or all of these sources to become overloaded in a microgrid. This paper presents an overload mitigation controller that addresses the two overload issues in a microgrid by actively controlling the sources’ frequency. When part of the sources in a microgrid is overloaded, the controller autonomously transfers the extra load to other sources by rapidly reducing its frequency. The frequency difference between sources during transient results in a change of phase angle, which redistributes the power flow. When all sourcesmore » in a microgrid are overloaded, each source keeps dropping the frequency. Therefore, under frequency load shedding can be used to trip the non-critical loads resulting in the survival of microgrid. The advantages of these concepts are that communications between sources are not needed during transient, and the robust voltage control is maintained. Lastly, simulation and field tests from CERTS/AEP microgrid test site verify that the control strategy is effective in both purely inverter-based microgrids and inverter & generator mixed microgrids.« less

Fabrication of resistively-coupled single-electron device using an array of gold nanoparticles

NASA Astrophysics Data System (ADS)

Huong, Tran Thi Thu; Matsumoto, Kazuhiko; Moriya, Masataka; Shimada, Hiroshi; Kimura, Yasuo; Hirano-Iwata, Ayumi; Mizugaki, Yoshinao

2017-08-01

We demonstrated one type of single-electron device that exhibited electrical characteristics similar to those of resistively-coupled SE transistor (R-SET) at 77 K and room temperature (287 K). Three Au electrodes on an oxidized Si chip served as drain, source, and gate electrodes were formed using electron-beam lithography and evaporation techniques. A narrow (70-nm-wide) gate electrode was patterned using thermal evaporation, whereas wide (800-nm-wide) drain and source electrodes were made using shadow evaporation. Subsequently, aqueous solution of citric acid and 15-nm-diameter gold nanoparticles (Au NPs) and toluene solution of 3-nm-diameter Au NPs chemisorbed via decanethiol were dropped on the chip to make the connections between the electrodes. Current-voltage characteristics between the drain and source electrodes exhibited Coulomb blockade (CB) at both 77 and 287 K. Dependence of the CB region on the gate voltage was similar to that of an R-SET. Simulation results of the model based on the scanning electron microscopy image of the device could reproduce the characteristics like the R-SET.

Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches

NASA Astrophysics Data System (ADS)

Miranda, E.; Jiménez, D.; Tsurumaki-Fukuchi, A.; Blasco, J.; Yamada, H.; Suñé, J.; Sawa, A.

2014-08-01

The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO3 polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0.07 eV) than previously reported (>0.5 eV). It is also shown that the p-type semiconducting nature of BiFeO3 can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4.7 V and -1.9 V) exhibited by our devices.

The effect of cathode felt geometries on electrochemical characteristics of sodium sulfur (NaS) cells: Planar vs. tubular

NASA Astrophysics Data System (ADS)

Kim, Goun; Park, Yoon-Cheol; Lee, Younki; Cho, Namung; Kim, Chang-Soo; Jung, Keeyoung

2016-09-01

Two sodium sulfur (NaS) cells, one with a planar design and the other with a tubular design, were subject to discharge-charge cycles in order to investigate the effect of cathode felt geometries on electrochemical characteristics of NaS cells. Their discharge-charge behaviors over 200 cycles were evaluated at the operation temperature of 350 °C with the current densities of 100 mA cm-2 for discharge and 80 mA cm-2 for charge. The results showed that the deviation from theoretical open circuit voltage changes of a planar cell was smaller than those of a tubular cell resulting in potential specific power loss reduction during operation. In order to understand the effect, a three dimensional statistically representative matrix for a cathode felt has been generated using experimentally measured data. It turns out that the area specific fiber number density in the outer side area of a tubular cathode felt is smaller than that of a planar felt resulting in occurrence of larger voltage drops via retarded convection of cathode melts during cell operation.

Efficiency and weight of voltage multiplier type ultra lightweight dc-dc converters

NASA Technical Reports Server (NTRS)

Harrigill, W. T., Jr.; Myers, I. T.

1975-01-01

An analytical and experimental study was made of a capacitor-diode voltage multiplier without a transformer which offers the possibility of high efficiency with light weight. The dc-dc conversion efficiencies of about 94 percent were achieved at output powers of 150 watts at 1000 volts using 8x multiplication. A detailed identification of losses was made, including forward drop losses in component, switching losses, reverse junction capacitance charging losses, and charging losses in the main ladder capacitors.

Analysis of the Poisson-Nernst-Planck equation in a ball for modeling the Voltage-Current relation in neurobiological microdomains

NASA Astrophysics Data System (ADS)

Cartailler, J.; Schuss, Z.; Holcman, D.

2017-01-01

The electro-diffusion of ions is often described by the Poisson-Nernst-Planck (PNP) equations, which couple nonlinearly the charge concentration and the electric potential. This model is used, among others, to describe the motion of ions in neuronal micro-compartments. It remains at this time an open question how to determine the relaxation and the steady state distribution of voltage when an initial charge of ions is injected into a domain bounded by an impermeable dielectric membrane. The purpose of this paper is to construct an asymptotic approximation to the solution of the stationary PNP equations in a d-dimensional ball (d = 1 , 2 , 3) in the limit of large total charge. In this geometry the PNP system reduces to the Liouville-Gelfand-Bratú (LGB) equation, with the difference that the boundary condition is Neumann, not Dirichlet, and there is a minus sign in the exponent of the exponential term. The entire boundary is impermeable to ions and the electric field satisfies the compatibility condition of Poisson's equation. These differences replace attraction by repulsion in the LGB equation, thus completely changing the solution. We find that the voltage is maximal in the center and decreases toward the boundary. We also find that the potential drop between the center and the surface increases logarithmically in the total number of charges and not linearly, as in classical capacitance theory. This logarithmic singularity is obtained for d = 3 from an asymptotic argument and cannot be derived from the analysis of the phase portrait. These results are used to derive the relation between the outward current and the voltage in a dendritic spine, which is idealized as a dielectric sphere connected smoothly to the nerve axon by a narrow neck. This is a fundamental microdomain involved in neuronal communication. We compute the escape rate of an ion from the steady density in a ball, which models a neuronal spine head, to a small absorbing window in the sphere. We predict that the current is defined by the narrow neck that is connected to the sphere by a small absorbing window, as suggested by the narrow escape theory, while voltage is controlled by the PNP equations independently of the neck.

Unexpected Nonlinear Effects in Superconducting Transition-Edge Sensors

NASA Technical Reports Server (NTRS)

Sadleir, John

2016-01-01

When a normal metal transitions into the superconducting state the DC resistance drops from a finite value to zero over some finite transition width in temperature, current, and magnetic field. Superconducting transition-edge sensors (TESs) operate within this transition region and uses resistive changes to measure deposited thermal energy. This resistive transition is not perfectly smooth and a wide range of TES designs and materials show sub-structure in the resistive transition (as seen in smooth nonmonotonic behavior, jump discontinuities, and hysteresis in the devices current-voltage relation and derivatives of the resistance with respect to temperature, bias current, and magnetic field). TES technology has advanced to the point where for many applications this structure is the limiting factor in performance and optimization consists of finding operating points away from these structures. For example, operating at or near this structure can lead to nonlinearity in the detectors response and gain scale, limit the spectral range of the detector by limiting the usable resistive range, and degrade energy resolution. The origin of much of this substructure is unknown. This presentation investigates a number of possible sources in turn. First we model the TES as a superconducting weak-link and solve for the characteristic differential equations current and voltage time dependence. We find:(1) measured DC biased current-voltage relationship is the time-average of a much higher frequency limit cycle solution.(2) We calculate the fundamental frequency and estimate the power radiated from the TES treating the bias leads as an antennae.(3) The solution for a set of circuit parameters becomes multivalued leading to current transitions between levels.(4)The circuit parameters can change the measure resistance and mask the true critical current. As a consequence the TES resistance surface is not just a function of temperature, current, and magnetic field but is also a function of the circuit elements (such as shunt resistor, SQUID inductance, and capacitor values). In other words, same device measured in different electrical circuits will have a different resistive surface in temperature, current, and magnetic field. Next we consider that at the transition temperature of a superconductor both the magnetic penetration depth and coherence length are divergent. As a consequence these important characteristic length scales are changing with operating point. We present measurements on devices showing commensurate behavior between these characteristic lengths and the length scale of added normal metal structures. Reordering of proximity vortices leads to discontinuities and irreversibility of the current-voltage curves. Last we consider a weak-link TES including both thermal activated resistance effects and the effect of the magnetic penetration depth being a function of temperature and magnetic field. We derive its impact on the resistive transition surface and the important device parameters a and b.

Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jyegal, Jang, E-mail: jjyegal@inu.ac.kr

Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onsetmore » of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices.« less

Heat radiation approach for harnessing heat of the cook stove to generate electricity for lighting system and charging of mobile phone

NASA Astrophysics Data System (ADS)

Muñoz, Rodrigo C., Jr.; Manansala, Chad Deo G.

2018-01-01

This study is based on the potential of thermoelectric coupling such as the thermoelectric cooler module. A thermoelectric cooler converts the heat coming from the cook stove into electricity and store in a battery. A dc-dc boost converter will be used to produce enough voltage to light a minimum house dwelling or charge phone battery. This device will be helpful to those that faces a problem on electricity especially in the isolated areas. The study aims (1) to harness heat from the cook stove up to 110 °C (2) To automatically cool-off the system to protect the thermoelectric cooler from damage due to excessive heat using an electronic solenoid; (3) To store energy harnessed in the battery; (4) To amplify the output voltages of the battery using DC to DC boost converter for lighting system and charging of mobile phone battery. From various tests conducted, it can fully charge a mobile phone in 3 hours observing the unit’s battery voltage drop from 4.06V to 3.98V. In the testing it used different orientation of steel rod by conduction to transfer heat and by radiation through tubular steel with its different dimensions. Most recent testing proved that the 2x2x9 tubular steel by radiation had the best result. The temperature reached more than a hundred degree Celsius that met the objective. The test resulted of boosting the voltage of the battery output from 3.7V to 4.96V on the average. The boosted voltage decrease as the system’s cool-off mechanism operated when the temperature reached above 110 degree Celsius decreasing output voltage to 0.8V resulting the boosted voltage to drop to zero. Therefore, the proponents concluded that heat waste can be converted to electrical energy by harnessing heat through radiation, with the help of TEC that generates voltage for lighting and can be boosted to be used for mobile charging. Furthermore, the study proved that the excess heat can damaged the TEC which was prevented by using of cooling-off mechanism, making it more useful for longer time.

Containerless protein crystal growth technology: Electrostatic multidrop positioner

NASA Technical Reports Server (NTRS)

Rhim, Won-Kyu

1990-01-01

A brief discussion of containerless protein crystal growth in space and a diagram of the electrostatic multidrop positioner are presented. A picture of lysome crystals growing in a drop and a graph of levitation voltage versus time (minutes) are also presented.

Thin SOI lateral IGBT with band-to-band tunneling mechanism

NASA Astrophysics Data System (ADS)

Fu, Qiang; Tang, Zhaohuan; Tan, Kaizhou; Wang, Zhikuan; Mei, Yong

2017-06-01

In this paper, a novel 200V lateral IGBT on thin SOI layer with a band-to-band tunneling junction near the anode is proposed. The structure and the operating mechanism of the proposed IGBT are described and discussed. Its main feature is that the novel IGBT structure has a unique abrupt doped p++/n++ tunneling junction in the side of the anode. By utilizing the reverse bias characteristics of the tunneling junction, the proposed IGBT can achieve excellent reverse conducting performance. Numerical simulations suggest that a low reverse conduction voltage drop VR=-1.6V at a current density of 100A/cm2 and a soft factor S=0.63 of the build-in diode are achieved.

Quench Protection of SC Quadrupole Magnets

NASA Astrophysics Data System (ADS)

Feher, S.; Bossert, R.; Dimarco, J.; Mitchell, D.; Lamm, M. J.; Limon, P. J.; Mazur, P.; Nobrega, F.; Orris, D.; Ozelis, J. P.; Strait, J. B.; Tompkins, J. C.; Zlobin, A. V.; McInturff, A. D.

1997-05-01

The energy stored in a superconducting accelerator magnet is dissipated after a quench in the coil normal zones, heating the coil and generating a turn to turn and coil to ground voltage drop. Quench heaters are used to protect the superconducting magnet by greatly increasing the coil normal zone thus allowing the energy to be dissipated over a larger conductor volume. Such heaters will be required for the Fermilab/LBNL design of the high gradient quads (HGQ) designed for the LHC interaction regions. As a first step, heaters were installed and tested in several Tevatron low-β superconducting quadrupoles. Experimental studies in normal and superfluid helium are presented which show the heater-induced quench response as a function of magnet excitation current, magnet temperature and peak heater energy density.

Electrical properties of graphene film for counter electrode in dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Khalifa, Ali; Shafie, S.; Hasan, W. Z. W.; Lim, H. N.; Rusop, M.; Samaila, Buda

2018-05-01

A graphene counter electrode for dye-sensitized solar cell was prepared simply by drop casting method on a conducting FTO glass at room temperature. Raman spectroscopy was used to study the defection in the graphene films. The sheet resistance was also measured and recoded minimum value of 7.04 Ω/□ at 22.19µm thickness. The casted films show good adhesion to substrates with low defects. A DSSC based on graphene counter electrode demonstrates reasonable conversion efficiency of 2.78% with short circuit current of 7.60mA, open circuit voltage of 0.69V and fill factor of 0.52. The high conductivity and low defects render the prepared graphene dispersion for DSSCs' CE application.

Voltage signals of individual Purkinje cell dendrites in rat cerebellar slices.

PubMed

Borst, A; Heck, D; Thomann, M

1997-11-28

For investigating neuronal information processing at the cellular level, a technique which visualizes the voltage distribution within single neurons in situ would be extremely useful. Voltage-sensitive dyes are, in principle, capable of reporting membrane potential [Cohen, L.B. and Salzberg, B.M., Rev. Physiol. Biochem. Pharmacol., 83 (1978) 35-88; Grinvald, A., Lieke, E.E., Frostig, R.D. and Hildesheim, R., J. Neurosci., 14 (1994) 2545-2568; Kleinfeld, D., Delaney, K.R., Fee, M.S., Flores, J.A., Tank, D.W. and Gelperin, A., J. Neurophysiol., 72 (1994) 1402-1419]. However, their application to single cells internally is technically difficult [Antic, S. and Zecevic, D., J. Neurosci., 15 (1995) 1392-1405; Grinvald, A., Salzberg, B.M., Lev-Ram, V. and Hildesheim, R., Biophys. J., 51 (1987) 643-651; Kogan, A., Ross, W.N., Zecevic, D. and Lasser-Ross, N., Brain Res., 700 (1995) 235-239; Zecevic, D., Nature, 381 (1996) 322-325]. An alternative strategy consists in applying the dye from the outside to all cells in the tissue, while manipulating a single cell by current injection [Krauthamer, V. and Ross, W.N., J. Neurosci., 4 (1984) 673-682; Ross, W.N. and Krauthamer, V., J. Neurosci., 4 (1984) 659-672]. Here, we modify this technique to further enhance spatial at the cost of temporal resolution [Borst, A., Z. Naturforsch., 50 (1995) 435-438]. Applied to rat cerebellar slices we demonstrate that the potential spread in individual Purkinje cells can be imaged up to even fine dendritic branches. The acquired optical signals suggest that steadily hyperpolarized Purkinje cells are electrically compact. When permanently depolarized, the somatic input resistance is significantly diminished, yet the spatial voltage drop along the dendrites remains unchanged. As demonstrated by compartmental modeling, this hints to a concentration of outward rectifying currents at the soma of the cells.

Temperature Dependent Electron Transport Properties of Gold Nanoparticles and Composites: Scanning Tunneling Spectroscopy Investigations.

PubMed

Patil, Sumati; Datar, Suwarna; Dharmadhikari, C V

2018-03-01

Scanning tunneling spectroscopy (STS) is used for investigating variations in electronic properties of gold nanoparticles (AuNPs) and its composite with urethane-methacrylate comb polymer (UMCP) as function of temperature. Films are prepared by drop casting AuNPs and UMCP in desired manner on silicon substrates. Samples are further analyzed for morphology under scanning electron microscopy (SEM) and atomic force microscopy (AFM). STS measurements performed in temperature range of 33 °C to 142 °C show systematic variation in current versus voltage (I-V) curves, exhibiting semiconducting to metallic transition/Schottky behavior for different samples, depending upon preparation method and as function of temperature. During current versus time (I-t) measurement for AuNPs, random telegraphic noise is observed at room temperature. Random switching of tunneling current between two discrete levels is observed for this sample. Power spectra derived from I-t show 1/f2 dependence. Statistical analysis of fluctuations shows exponential behavior with time width τ ≈ 7 ms. Local density of states (LDOS) plots derived from I-V curves of each sample show systematic shift in valance/conduction band edge towards/away from Fermi level, with respect to increase in temperature. Schottky emission is best fitted electron emission mechanism for all samples over certain range of bias voltage. Schottky plots are used to calculate barrier heights and temperature dependent measurements helped in measuring activation energies for electron transport in all samples.

An 11 cm long atmospheric pressure cold plasma plume for applications of plasma medicine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu Xinpei; Jiang Zhonghe; Xiong Qing

2008-02-25

In this letter, a room temperature atmospheric pressure plasma jet device is reported. The high voltage electrode of the device is covered by a quartz tube with one end closed. The device, which is driven by a kilohertz ac power supply, is capable of generating a plasma plume up to 11 cm long in the surrounding room air. The rotational and vibrational temperatures of the plasma plume are 300 and 2300 K, respectively. A simple electrical model shows that, when the plasma plume is contacted with a human, the voltage drop on the human is less than 66 V formore » applied voltage of 5 kV (rms)« less

Investigation of problems associated with solid encapsulation of high voltage electronic assemblies; also Reynolds connector study

NASA Technical Reports Server (NTRS)

Bever, R. S.

1975-01-01

Electric breakdown prevention in vacuum and encapsulation of high voltage electronic circuits was studied. The lap shear method was used to measure adhesive strengths. The permeation constants of air at ambient room temperature through four different space-grade encapsulants was measured. Order of magnitude was calculated for the time that air bubble pressures drop to the corona region. High voltage connectors with L-type cable attached were tested in a vacuum system at various pressures. The cable system was shown to suppress catastrophic breakdown when filled with and surrounded by gas in the corona region of pressures, but did not prove to be completely noise free.

Repetitive nanosecond electron accelerators type URT-1 for radiation technology

NASA Astrophysics Data System (ADS)

Sokovnin, S. Yu.; Balezin, M. E.

2018-03-01

The electron accelerator URT-1М-300 for mobile installation was created for radiation disinfecting to correct drawbacks that were found the URT-1M electron accelerator operation (the accelerating voltage up to 1 МV, repetition rate up to 300 pps, electron beam size 400 × 100 mm, the pulse width about 100 ns). Accelerator configuration was changed that allowed to reduce significantly by 20% tank volume with oil where is placed the system of formation high-voltage pulses, thus the average power of the accelerator is increased by 6 times at the expense of increase in pulses repetition rate. Was created the system of the computerized monitoring parameters (output parameters and thermal mode) and remote control of the accelerator (charge voltage, pulse repetition rate), its elements and auxiliary systems (heat of the thyratron, vacuum system), the remote control panel is connected to the installation by the fiber-optical channel, what lightens the work for service personnel. For generating an electron beam up to 400 mm wide there are used metal- ceramic] and metal-dielectric cold cathodes of several emission elements (plates) with a non-uniform distribution of the electron beam current density on the output foil ± 15%. It was found that emission drop of both type of cathodes, during the operation at the high repetition rate (100 pps) is substantial at the beginning of the process, and then proceeds rather slowly that allows for continuous operation up to 40 h. Experiments showed that linear dependence of the voltage and a signal from the pin-diode remains within the range of the charge voltage 45-65 kV. Thus, voltage increases from 690 to 950 kV, and the signal from the pin-diode - from (2,8-4,6)*104 Gy/s. It allows to select electron energy quite precisely with consideration of the radiation technology requirements.

Allocation of Load-Loss Cost Caused by Voltage Sag

NASA Astrophysics Data System (ADS)

Gao, X.

2017-10-01

This paper focuses on the allocation of load-loss cost caused by voltage sag in the environment of electricity market. To compensate the loss of loads due to voltage sags, the load-loss cost is allocated to both sources and power consumers. On the basis of Load Drop Cost (LDC), a quantitative evaluation index of load-loss cost caused by voltage sag is identified. The load-loss cost to be allocated to power consumers themselves is calculated according to load classification. Based on the theory of power component the quantitative relation between sources and loads is established, thereby a quantitative calculation method for load-loss cost allocated to each source is deduced and the quantitative compensation from individual source to load is proposed. A simple five-bus system illustrates the main features of the proposed method.

Inception of Snapover and Gas Induced Glow Discharges

NASA Technical Reports Server (NTRS)

Galofaro, J. T.; Vayner, B. V.; Degroot, W. A.; Ferguson, D. C.; Thomson, C. D.; Dennison, J. R.; Davies, R. E.

2000-01-01

Ground based experiments of the snapover phenomenon were conducted in the large vertical simulation chamber at the Glenn Research Center (GRC) Plasma Interaction Facility (PIF). Two Penning sources provided both argon and xenon plasmas for the experiments. The sources were used to simulate a variety of ionospheric densities pertaining to a spacecraft in a Low Earth Orbital (LEO) environment. Secondary electron emission is believed responsible for dielectric surface charging, and all subsequent snapover phenomena observed. Voltage sweeps of conductor potentials versus collected current were recorded in order to examine the specific charging history of each sample. The average time constant for sample charging was estimated between 25 and 50 seconds for all samples. It appears that current drops off by approximately a factor of 3 over the charging time of the sample. All samples charged in the forward and reverse bias directions, demonstrated hysteresis. Current jumps were only observed in the forward or positive swept voltage direction. There is large dispersion in tile critical snapover potential when repeating sweeps on any one sample. The current ratio for the first snapover region jumps between 2 and 4.6 times, with a standard deviation less than 1.6. Two of the samples showed even larger current ratios. It is believed the second large snapover region is due to sample outgassing. Under certain preset conditions, namely at the higher neutral gas background pressures, a perceptible blue-green glow was observed around the conductor. The glow is believed to be a result of secondary electrons undergoing collisions with an expelled tenuous cloud of gas, that is outgassed from the sample. Spectroscopic measurements of the glow discharge were made in an attempt to identify specific lines contributing to the observed glow.

ROSE::FTTransform - A Source-to-Source Translation Framework for Exascale Fault-Tolerance Research

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lidman, J; Quinlan, D; Liao, C

2012-03-26

Exascale computing systems will require sufficient resilience to tolerate numerous types of hardware faults while still assuring correct program execution. Such extreme-scale machines are expected to be dominated by processors driven at lower voltages (near the minimum 0.5 volts for current transistors). At these voltage levels, the rate of transient errors increases dramatically due to the sensitivity to transient and geographically localized voltage drops on parts of the processor chip. To achieve power efficiency, these processors are likely to be streamlined and minimal, and thus they cannot be expected to handle transient errors entirely in hardware. Here we present anmore » open, compiler-based framework to automate the armoring of High Performance Computing (HPC) software to protect it from these types of transient processor errors. We develop an open infrastructure to support research work in this area, and we define tools that, in the future, may provide more complete automated and/or semi-automated solutions to support software resiliency on future exascale architectures. Results demonstrate that our approach is feasible, pragmatic in how it can be separated from the software development process, and reasonably efficient (0% to 30% overhead for the Jacobi iteration on common hardware; and 20%, 40%, 26%, and 2% overhead for a randomly selected subset of benchmarks from the Livermore Loops [1]).« less

High temperature charge amplifier for geothermal applications

DOEpatents

Lindblom, Scott C.; Maldonado, Frank J.; Henfling, Joseph A.

2015-12-08

An amplifier circuit in a multi-chip module includes a charge to voltage converter circuit, a voltage amplifier a low pass filter and a voltage to current converter. The charge to voltage converter receives a signal representing an electrical charge and generates a voltage signal proportional to the input signal. The voltage amplifier receives the voltage signal from the charge to voltage converter, then amplifies the voltage signal by the gain factor to output an amplified voltage signal. The lowpass filter passes low frequency components of the amplified voltage signal and attenuates frequency components greater than a cutoff frequency. The voltage to current converter receives the output signal of the lowpass filter and converts the output signal to a current output signal; wherein an amplifier circuit output is selectable between the output signal of the lowpass filter and the current output signal.

Magnetospheric discontinuities and interfaces as roots of discrete auroral arcs: modeling and comparison with in-situ data

NASA Astrophysics Data System (ADS)

Echim, M.; Maggiolo, R.; de Keyser, J. M.; Roth, M. A.

2009-12-01

We discuss the quasi-stationary coupling between magnetospheric sharp plasma interfaces and discrete auroral arcs. The magnetospheric generator is described by a Vlasov equilibrium similar to the kinetic models of tangential discontinuities. It provides the self-consistent profile of the magnetospheric convergent electric field, Φm. A kinetic current-voltage relationship gives the field-aligned current density flowing into and out of the ionosphere as a function of the potential difference between the magnetospheric generator and the ionospheric load. The electric potential in the ionosphere, Φi, is computed from the current continuity equation taking into account the variation of the Pedersen conductance, ΣP, with the energy flux of the precipitating magnetospheric electrons (ɛem). We discuss results obtained for the interface between the Plasma Sheet Boundary Layer (PSBL) and the lobes and respectively for the inner edge of the Low Latitude Boundary Layer (LLBL). This type of interfaces provides a field-aligned potential drop, ΔΦ=Φi-Φm, of the order of several kilovolts and field-aligned current densities, j||, of the order of tens of μA/m2 . The precipitating particles are confined in thin regions whose thickness is of the order of several kilometers at 200 km altitude. We show that visible auroral arcs form when the velocity shear across the generator magnetospheric plasma interface is above a threshold depending also on the kinetic properties of the generator. Brighter arcs forms for larger velocity shear in the magnetospheric generator. The field-aligned potential drop tends to decrease when the density gradient across the interface increases. Conjugated observations on April 28, 2001 by Cluster and DMSP-F14 give us the opportunity to validate the model with data gathered simultaneously below and above the acceleration region. The magnetospheric module of the coupling model provides a good estimation of the plasma parameters measured by Cluster across the magnetospheric interface: the electric potential, the plasma density and the parallel flux of downgoing electrons and upgoing Oxygen ions. The results of the ionospheric module of the model are in good agreement with the DMSP-F14 measurements of the field-aligned current density, the flux of precipitating energy and the accelerating field-aligned potential drop. A synthetic electron energy spectrum derived from the computed field-aligned potential drop retrieves the spatial scale and spectral width of the inverted-V event observed by DMSP-F14.

Compensation for Harmonic Currents and Reactive Power in Wind Power Generation System using PWM Inverter

NASA Astrophysics Data System (ADS)

Shinohara, Katsuji; Shinhatsubo, Kurato; Iimori, Kenichi; Yamamoto, Kichiro; Saruban, Takamichi; Yamaemori, Takahiro

In recent year, consciousness of environmental problems is enhancing, and the price of the electric power purchased by an electric power company is established expensive for the power plant utilizing the natural energy. So, the introduction of the wind power generation is promoted in Japan. Generally, squirrel-cage induction machines are widely used as a generator in wind power generation system because of its small size, lightweight and low-cost. However, the induction machines do not have a source of excitation. Thus, it causes the inrush currents and the instantaneous voltage drop when the generator is directly connected to a power grid. To reduce the inrush currents, an AC power regulator is used. Wind power generations are frequently connected to and disconnected from the power grid. However, when the inrush currents are reduced, harmonic currents are caused by phase control of the AC power regulator. And the phase control of AC power regulator cannot control the power factor. Therefore, we propose the use of the AC power regulator to compensate for the harmonic currents and reactive power in the wind power generation system, and demonstrate the validity of its system by simulated and experimental results.

Numerical investigation and thermodynamic analysis of the effect of electrolyte flow rate on performance of all vanadium redox flow batteries

NASA Astrophysics Data System (ADS)

Khazaeli, Ali; Vatani, Ali; Tahouni, Nassim; Panjeshahi, Mohammad Hassan

2015-10-01

In flow batteries, electrolyte flow rate plays a crucial role on the minimizing mass transfer polarization which is at the compensation of higher pressure drop. In this work, a two-dimensional numerical method is applied to investigate the effect of electrolyte flow rate on cell voltage, maximum depth of discharge and pressure drop a six-cell stack of VRFB. The results show that during the discharge process, increasing electrolyte flow rate can raise the voltage of each cell up to 50 mV on average. Moreover, the maximum depth of discharge dramatically increases with electrolyte flow rate. On the other hand, the pressure drop also positively correlates with electrolyte flow rate. In order to investigate all these effects simultaneously, average energy and exergy efficiencies are introduced in this study for the transient process of VRFB. These efficiencies give insight into choosing an appropriate strategy for the electrolyte flow rate. Finally, the energy efficiency of electricity storage using VRFB is investigated and compared with other energy storage systems. The results illustrate that this kind of battery has at least 61% storage efficiency based on the second law of thermodynamics, which is considerably higher than that of their counterparts.

Radiative Ignition and the Transition to Flame Spread Investigated in the Japan Microgravity Center's 10-sec Drop Shaft

NASA Technical Reports Server (NTRS)

1996-01-01

The Radiative Ignition and Transition to Spread Investigation (RITSI) is a shuttle middeck Glovebox combustion experiment developed by the NASA Lewis Research Center, the National Institute for Standards and Technology (NIST), and Aerospace Design and Fabrication (ADF). It is scheduled to fly on the third United States Microgravity Payload (USMP-3) mission in February 1996. The objective of RITSI is to experimentally study radiative ignition and the subsequent transition to flame spread in low gravity in the presence of very low speed air flows in two- and three-dimensional configurations. Toward this objective, a unique collaboration between NASA, NIST, and the University of Hokkaido was established to conduct 15 science and engineering tests in Japan's 10-sec drop shaft. For these tests, the RITSI engineering hardware was mounted in a sealed chamber with a variable oxygen atmosphere. Ashless filter paper was ignited during each drop by a tungsten-halogen heat lamp focused on a small spot in the center of the paper. The flame spread outward from that point. Data recorded included fan voltage (a measure of air flow), radiant heater voltage (a measure of radiative ignition energy), and surface temperatures (measured by up to three surface thermocouples) during ignition and flame spread.

Mixed Cassie-Baxter wetting states on a porous material stabilized by electrowetting

NASA Astrophysics Data System (ADS)

Lambert, Jérôme; Gauchet, Lucien; Crassous, Jérôme

2017-07-01

Electrowetting is used to force imbibition in model porous plates. These porous plates are sintered disordered bronze bead packings that are homogeneously coated with a constant-thickness layer of parylene. Cycles of increasing and decreasing voltage trigger the imbibition of a ionized water sessile drop by changing its contact angle with the porous material from non-wetting to wetting shapes. During a cycle, a drop experiences partial imbibition and a strong hysteresis of its contact angle with the porous plate. Since the imbibition process quickly stabilizes, we adopt an equilibrium description of the wetting properties of the drop on the porous plate. Our model, based on the Cassie-Baxter approach, shows that three different wetting states are experienced by the drop, one of which being made possible only by the modification of the contact angle inside the pores. Our model describes the experimental results very well.

Vacuum arc behavior and its voltage characteristics in drawing process controlled by composite magnetic fields along axial and transverse directions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lijun, E-mail: lijunwang@mail.xjtu.edu.cn; Deng, Jie; Wang, Haijing

In this research, drawing vacuum arc (VA) experiments were conducted using composite contacts under currents ranging from 5 kA to 20 kA root mean square (rms). The new type of contact comprised an axial magnetic field (AMF) configuration and a transverse magnetic field (TMF) configuration. The TMF plate was in the center, surrounded by the AMF plate. The contact generated both AMFs and TMFs simultaneously. VA appearances and arc voltages were recorded, and the VA was modeled as a conductor for electromagnetic force analysis in ANSYS software. The results showed that the coaxiality of operating mechanisms significantly influenced arc behavior just asmore » the arc was ignited. When arc brightness did not increase after ignition, there was a voltage drop accompanied with diffusion of the VA. As to VA development, when an arc was ignited on an AMF plate, it spread on the plate and rotated. Over time the arc current increased, the constricting arc forms, and the arc column rotated on the TMF plate under the action of Ampere's force. With regard to the influence of a magnetic field on a VA at different stages, in the initial drawing arc stage the TMF was dominant, and the arc started to rotate under the action of Ampere's force. Afterwards, the AMF was dominant, with a steadily burning arc. As for contact melting, in the initial arcing period, a contracted short arc caused severe melting and erosion of the contact plate. When the ignition spot or root was close to the slot of plate, the electromagnetic force pushed the arc toward slot and contact edge, resulting in local erosion of the slot region.« less

Investigation of a playa lake bed using geophysical electrical methods

NASA Astrophysics Data System (ADS)

Herrmenn, M.; Gurrola, H.; William, R.; Montalvo, R.; Horton, S.; Homberg, J.; Allen, T.; Bribiesca, E.; Lindsey, C.; Anderson, H.; Seshadri, S.; Manns, S.; Hassan, A.; Loren, C.

2005-12-01

The 2005 undergraduate applied geophysical class of Texas Tech University conducted a geophysical survey of a playa lake approximately 10 miles northwest of Lubbock Texas. The playa lake is primarily used as grazing land for two llamas and a hand full of sheep, and has been recently used as a dump for broken down sheds and barrels. Our goal was to model the subsurface of the transition from the playa to plains geology and investigate the possible contamination, of the soil and the data, by the metal dumped at the surface. We conducted our survey with and EM31 and homemade D.C. resistivity and SP equipment that allowed students to grasp the theories more clearly. SP readings were collected using clay pots constructed from terracotta pots and copper tubing purchased at the local hardware store and voltage measurements collected with handle held multi-meters. D.C. resistivity data were collected in a dipole-dipole array using 20 nine volt batteries connected in series with a large enough variable resistor and amp meter to regulate steady current flow. A multi meter was used to collect voltage readings. Wenner array data were collected using a home-made multi-filament cable connected switch box to allow a central user to regulate current and take voltage reading. A map of conductivity produced from a 10 m of EM31 reading show that conductivity anomalies mirror topography. The SP profiles show high values in the playa lake that drop off as we move from the clay rich lake bed to normal grassland. Analysis of both the Dipole-Dipole and Wenner array data support a model with 3 flat layers increasing in resistivity with depth. It appears that these remain flat passing beneath the playa and the playa is eroded into these layers.

Measurement of inkjet first-drop behavior using a high-speed camera

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Kye-Si, E-mail: kskwon@sch.ac.kr; Kim, Hyung-Seok; Choi, Moohyun

2016-03-15

Drop-on-demand inkjet printing has been used as a manufacturing tool for printed electronics, and it has several advantages since a droplet of an exact amount can be deposited on an exact location. Such technology requires positioning the inkjet head on the printing location without jetting, so a jetting pause (non-jetting) idle time is required. Nevertheless, the behavior of the first few drops after the non-jetting pause time is well known to be possibly different from that which occurs in the steady state. The abnormal behavior of the first few drops may result in serious problems regarding printing quality. Therefore, amore » proper evaluation of a first-droplet failure has become important for the inkjet industry. To this end, in this study, we propose the use of a high-speed camera to evaluate first-drop dissimilarity. For this purpose, the image acquisition frame rate was determined to be an integer multiple of the jetting frequency, and in this manner, we can directly compare the droplet locations of each drop in order to characterize the first-drop behavior. Finally, we evaluate the effect of a sub-driving voltage during the non-jetting pause time to effectively suppress the first-drop dissimilarity.« less

Effect of Reduced Tube Voltage on Diagnostic Accuracy of CT Colonography.

PubMed

Futamata, Yoshihiro; Koide, Tomoaki; Ihara, Riku

2017-01-01

The normal tube voltage in computed tomography colonography (CTC) is 120 kV. Some reports indicate that the use of a low tube voltage (lower than 120 kV) technique plays a significant role in reduction of radiation dose. However, to determine whether a lower tube voltage can reduce radiation dose without compromising diagnostic accuracy, an evaluation of images that are obtained while maintaining the volume CT dose index (CTDI vol ) is required. This study investigated the effect of reduced tube voltage in CTC, without modifying radiation dose (i.e. constant CTDI vol ), on image quality. Evaluation of image quality involved the shape of the noise power spectrum, surface profiling with volume rendering (VR), and receiver operating characteristic (ROC) analysis. The shape of the noise power spectrum obtained with a tube voltage of 80 kV and 100 kV was not similar to the one produced with a tube voltage of 120 kV. Moreover, a higher standard deviation was observed on volume-rendered images that were generated using the reduced tube voltages. In addition, ROC analysis revealed a statistically significant drop in diagnostic accuracy with reduced tube voltage, revealing that the modification of tube voltage affects volume-rendered images. The results of this study suggest that reduction of tube voltage in CTC, so as to reduce radiation dose, affects image quality and diagnostic accuracy.

Electron transport in stepped Bi2Se3 thin films

NASA Astrophysics Data System (ADS)

Bauer, S.; Bobisch, C. A.

2017-08-01

We analyse the electron transport in a 16 quintuple layer thick stepped Bi2Se3 film grown on Si(1 1 1) by means of scanning tunnelling potentiometry (STP) and multi-point probe measurements. Scanning tunnelling microscopy images reveal that the local structure of the Bi2Se3 film is dominated by terrace steps and domain boundaries. From a microscopic study on the nm scale by STP, we find a mostly linear gradient of the voltage on the Bi2Se3 terraces which is interrupted by voltage drops at the position of the domain boundaries. The voltage drops indicate that the domain boundaries are scatterers for the electron transport. Macroscopic resistance measurements (2PP and in-line 4PP measurement) on the µm scale support the microscopic results. An additional rotational square 4PP measurement shows an electrical anisotropy of the sheet conductance parallel and perpendicular to the Bi2Se3 steps of about 10%. This is a result of the anisotropic step distribution at the stepped Bi2Se3 surface while domain boundaries are distributed isotropically. The determined value of the conductivity of the Bi2Se3 steps of about 1000 S cm-1 verifies the value of an earlier STP study.

The influence of mass configurations on velocity amplified vibrational energy harvesters

NASA Astrophysics Data System (ADS)

O'Donoghue, D.; Frizzell, R.; Kelly, G.; Nolan, K.; Punch, J.

2016-05-01

Vibrational energy harvesters scavenge ambient vibrational energy, offering an alternative to batteries for the autonomous operation of low power electronics. Velocity amplified electromagnetic generators (VAEGs) utilize the velocity amplification effect to increase power output and operational bandwidth, compared to linear resonators. A detailed experimental analysis of the influence of mass ratio and number of degrees-of-freedom (dofs) on the dynamic behaviour and power output of a macro-scale VAEG is presented. Various mass configurations are tested under drop-test and sinusoidal forced excitation, and the system performances are compared. For the drop-test, increasing mass ratio and number of dofs increases velocity amplification. Under forced excitation, the impacts between the masses are more complex, inducing greater energy losses. This results in the 2-dof systems achieving the highest velocities and, hence, highest output voltages. With fixed transducer size, higher mass ratios achieve higher voltage output due to the superior velocity amplification. Changing the magnet size to a fixed percentage of the final mass showed the increase in velocity of the systems with higher mass ratios is not significant enough to overcome the reduction in transducer size. Consequently, the 3:1 mass ratio systems achieved the highest output voltage. These findings are significant for the design of future reduced-scale VAEGs.

Comparison analysis on the thermal runaway of lithium-ion battery under two heating modes.

PubMed

Wu, Tangqin; Chen, Haodong; Wang, Qingsong; Sun, Jinhua

2018-02-15

The thermal stability evaluation of materials in a soft-pack commercial cell is tested using C80 calorimeter, including anode, cathode, separator and full cell (mixing of the three materials including additional electrolyte). Thermal runaway characteristic of the commercial cell is tested on the accelerating rate calorimeter (ARC) with two heating modes, including internal heating mode and external heating mode. The results show that the thermal stability of internal material for tested cell follows the below order: anode

46 CFR 111.05-29 - Dual voltage direct current systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Dual voltage direct current systems. Each dual voltage direct current system must have a suitably sensitive ground detection system which indicates current in the ground connection, has a range of at least... 46 Shipping 4 2010-10-01 2010-10-01 false Dual voltage direct current systems. 111.05-29 Section...

46 CFR 111.05-29 - Dual voltage direct current systems.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Dual voltage direct current systems. Each dual voltage direct current system must have a suitably sensitive ground detection system which indicates current in the ground connection, has a range of at least... 46 Shipping 4 2011-10-01 2011-10-01 false Dual voltage direct current systems. 111.05-29 Section...

Battery Cell By-Pass Circuit

NASA Technical Reports Server (NTRS)

Mumaw, Susan J. (Inventor); Evers, Jeffrey (Inventor); Craig, Calvin L., Jr. (Inventor); Walker, Stuart D. (Inventor)

2001-01-01

The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.

Single Nanoparticle Translocation Through Chemically Modified Solid Nanopore

NASA Astrophysics Data System (ADS)

Tan, Shengwei; Wang, Lei; Liu, Hang; Wu, Hongwen; Liu, Quanjun

2016-02-01

The nanopore sensor as a high-throughput and low-cost technology can detect single nanoparticle in solution. In the present study, the silicon nitride nanopores were fabricated by focused Ga ion beam (FIB), and the surface was functionalized with 3-aminopropyltriethoxysilane to change its surface charge density. The positively charged nanopore surface attracted negatively charged nanoparticles when they were in the vicinity of the nanopore. And, nanoparticle translocation speed was slowed down to obtain a clear and deterministic signal. Compared with previous studied small nanoparticles, the electrophoretic translocation of negatively charged polystyrene (PS) nanoparticles (diameter ~100 nm) was investigated in solution using the Coulter counter principle in which the time-dependent nanopore current was recorded as the nanoparticles were driven across the nanopore. A linear dependence was found between current drop and biased voltage. An exponentially decaying function ( t d ~ e -v/v0 ) was found between the duration time and biased voltage. The interaction between the amine-functionalized nanopore wall and PS microspheres was discussed while translating PS microspheres. We explored also translocations of PS microspheres through amine-functionalized solid-state nanopores by varying the solution pH (5.4, 7.0, and 10.0) with 0.02 M potassium chloride (KCl). Surface functionalization showed to provide a useful step to fine-tune the surface property, which can selectively transport molecules or particles. This approach is likely to be applied to gene sequencing.

An alternating voltage battery with two salt-water oscillators

NASA Astrophysics Data System (ADS)

Cervellati, Rinaldo; Soldà, Roberto

2001-05-01

We built a simple alternating voltage battery that periodically reverses value and sign of its electromotive force (emf). This battery consists of two coupled concentration salt-water oscillators that are phase shifted by initially extracting some drops of salt solution from one of the two oscillators. Although the actual frequency (period: ˜30 s) and emf (˜±55 mV) is low, our battery is suitable to demonstrate a practical application of oscillating systems in the physical, chemical, or biological laboratory for undergraduates. Interpretation of the phenomenon is given.

Meter circuit for tuning RF amplifiers

NASA Technical Reports Server (NTRS)

Longthorne, J. E.

1973-01-01

Circuit computes and indicates efficiency of RF amplifier as inputs and other parameters are varied. Voltage drop across internal resistance of ammeter is amplified by operational amplifier and applied to one multiplier input. Other input is obtained through two resistors from positive terminal of power supply.

Biasing experiments on the Advanced Toroidal Facility

NASA Astrophysics Data System (ADS)

Uckan, T.; Isler, R. C.; Jernigan, T. C.; Lyon, J. F.; Mioduszewski, P. K.; Murakami, M.; Rasmussen, D. A.; Wilgen, J. B.; Aceto, S. C.; Zielinski, J. J.

1992-09-01

Biasing experiments have been carried out in 1 T plasmas with approximately 200 kW of electron cyclotron heating (ECH) in the current-fire Advanced Toroidal Facility (ATF) torsatron. Two rail limiters, one at the top and one at the bottom of the device, located at the last closed flux surface (LCFS), are, biased at positive and negative potentials with respect to the vacuum vessel. When the limiters are positively biased at up to 300 V and the plasma density is controlled with a significantly reduced gas feed, the H(sub alpha) radiation from both the limiter and the wall drops, indicating reduced particle recycling as a result of improved particle confinement. For bias voltages around +100 V, there is almost no change of plasma stored energy W(sub p), but W(sub p) then drops with the higher biasing voltages. Positive biasing has caused the core plasma density profile to become peaked and the electric field to become more negative inside the LCFS. At the same time, edge plasma fluctuations are reduced significantly and their power spectrum becomes less broad. The propagation direction of these electrostatic fluctuations reverses to the ion diamagnetic direction, and their wavelengths become longer. The resulting fluctuation-induced particle flux is also reduced. Power deposition on the limiters is lower as a result of reduced edge plasma density and temperature. Negative biasing yields somewhat less improvement in the particle confinement while having almost no apparent effect on W(sub p) or on the core and the edge plasma density and temperature profiles. Simultaneous measurements of the plasma potential profile indicate almost no significant change. Biasing has almost no effect on the intrinsic impurity levels in the plasma.

Errors due to measuring voltage on current-carrying electrodes in electric current computed tomography.

PubMed

Cheng, K S; Simske, S J; Isaacson, D; Newell, J C; Gisser, D G

1990-01-01

Electric current computed tomography is a process for determining the distribution of electrical conductivity inside a body based upon measurements of voltage or current made at the body's surface. Most such systems use different electrodes for the application of current and the measurement of voltage. This paper shows that when a multiplicity of electrodes are attached to a body's surface, the voltage data are most sensitive to changes in resistivity in the body's interior when voltages are measured from all electrodes, including those carrying current. This assertion is true despite the presence of significant levels of skin impedance at the electrodes. This conclusion is supported both theoretically and by experiment. Data were first taken using all electrodes for current and voltage. Then current was applied only at a pair of electrodes, with voltages measured on all other electrodes. We then constructed the second data set by calculation from the first. Targets could be detected with better signal-to-noise ratio by using the reconstructed data than by using the directly measured voltages on noncurrent-carrying electrodes. Images made from voltage data using only noncurrent-carrying electrodes had higher noise levels and were less able to accurately locate targets. We conclude that in multiple electrode systems for electric current computed tomography, current should be applied and voltage should be measured from all available electrodes.

Performance characteristics of lithium primary cells after controlled storage. [on-orbit for energy power supply

NASA Technical Reports Server (NTRS)

Deligiannis, F.; Shen, D. H.; Halpert, G.; Ang, V.; Donley, S.

1991-01-01

A program was initiated to investigate the effects of storage on the performance of lithium primary cells. Two types of liquid cathode cells were chosen to investigate these effects. The cell types included Li-SOCl2/BCX cells, Li-SO2 cells from two different manufacturers, and a small sample size of 8-year-old Li-SO2 cells. The following measurements are performed at each test interval: open circuit voltage, resistance and weight, microcalorimetry, ac impedance, capacity, and voltage delay. The authors examine the performance characteristics of these cells after one year of controlled storage at two temperatures (10 and 30 C). The Li-SO2 cells experienced little to no voltage and capacity degradation after one year storage. The Li-SOCl2/BCX cells exhibited significant voltage and capacity degradation after 30 C storage. Predischarging shortly prior to use appears to be an effective method of reducing the initial voltage drop. Studies are in progress to correlate ac impedance and microcalorimetry measurements with capacity losses and voltage delay.

Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

NASA Astrophysics Data System (ADS)

Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for high-voltage X-ray DC-DC power converter with a voltage multiplier strategy has some specified voltage pattern tracking voltage response performances under rapid rising time and no overshoot in start transient tube voltage as well as the minimized steady-state voltage ripple in tube voltage.

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

Direct model-based predictive control scheme without cost function for voltage source inverters with reduced common-mode voltage

NASA Astrophysics Data System (ADS)

Kim, Jae-Chang; Moon, Sung-Ki; Kwak, Sangshin

2018-04-01

This paper presents a direct model-based predictive control scheme for voltage source inverters (VSIs) with reduced common-mode voltages (CMVs). The developed method directly finds optimal vectors without using repetitive calculation of a cost function. To adjust output currents with the CMVs in the range of -Vdc/6 to +Vdc/6, the developed method uses voltage vectors, as finite control resources, excluding zero voltage vectors which produce the CMVs in the VSI within ±Vdc/2. In a model-based predictive control (MPC), not using zero voltage vectors increases the output current ripples and the current errors. To alleviate these problems, the developed method uses two non-zero voltage vectors in one sampling step. In addition, the voltage vectors scheduled to be used are directly selected at every sampling step once the developed method calculates the future reference voltage vector, saving the efforts of repeatedly calculating the cost function. And the two non-zero voltage vectors are optimally allocated to make the output current approach the reference current as close as possible. Thus, low CMV, rapid current-following capability and sufficient output current ripple performance are attained by the developed method. The results of a simulation and an experiment verify the effectiveness of the developed method.

Image registration algorithm for high-voltage electric power live line working robot based on binocular vision

NASA Astrophysics Data System (ADS)

Li, Chengqi; Ren, Zhigang; Yang, Bo; An, Qinghao; Yu, Xiangru; Li, Jinping

2017-12-01

In the process of dismounting and assembling the drop switch for the high-voltage electric power live line working (EPL2W) robot, one of the key problems is the precision of positioning for manipulators, gripper and the bolts used to fix drop switch. To solve it, we study the binocular vision system theory of the robot and the characteristic of dismounting and assembling drop switch. We propose a coarse-to-fine image registration algorithm based on image correlation, which can improve the positioning precision of manipulators and bolt significantly. The algorithm performs the following three steps: firstly, the target points are marked respectively in the right and left visions, and then the system judges whether the target point in right vision can satisfy the lowest registration accuracy by using the similarity of target points' backgrounds in right and left visions, this is a typical coarse-to-fine strategy; secondly, the system calculates the epipolar line, and then the regional sequence existing matching points is generated according to neighborhood of epipolar line, the optimal matching image is confirmed by calculating the similarity between template image in left vision and the region in regional sequence according to correlation matching; finally, the precise coordinates of target points in right and left visions are calculated according to the optimal matching image. The experiment results indicate that the positioning accuracy of image coordinate is within 2 pixels, the positioning accuracy in the world coordinate system is within 3 mm, the positioning accuracy of binocular vision satisfies the requirement dismounting and assembling the drop switch.

Systems and methods for providing power to a load based upon a control strategy

DOEpatents

Perisic, Milun; Lawrence, Christopher P; Ransom, Ray M; Kajouke, Lateef A

2014-11-04

Systems and methods are provided for an electrical system. The electrical system, for example, includes a first load, an interface configured to receive a voltage from a voltage source, and a controller configured to receive the voltage through the interface and to provide a voltage and current to the first load. The controller may be further configured to, receive information on a second load electrically connected to the voltage source, determine an amount of reactive current to return to the voltage source such that a current drawn by the electrical system and the second load from the voltage source is substantially real, and provide the determined reactive current to the voltage source.

Charged particle detectors with active detector surface for partial energy deposition of the charged particles and related methods

DOEpatents

Gerts, David W; Bean, Robert S; Metcalf, Richard R

2013-02-19

A radiation detector is disclosed. The radiation detector comprises an active detector surface configured to generate charge carriers in response to charged particles associated with incident radiation. The active detector surface is further configured with a sufficient thickness for a partial energy deposition of the charged particles to occur and permit the charged particles to pass through the active detector surface. The radiation detector further comprises a plurality of voltage leads coupled to the active detector surface. The plurality of voltage leads is configured to couple to a voltage source to generate a voltage drop across the active detector surface and to separate the charge carriers into a plurality of electrons and holes for detection. The active detector surface may comprise one or more graphene layers. Timing data between active detector surfaces may be used to determine energy of the incident radiation. Other apparatuses and methods are disclosed herein.

An Estimation Method of System Voltage Sag Profile using Recorded Sag Data

NASA Astrophysics Data System (ADS)

Tanaka, Kazuyuki; Sakashita, Tadashi

The influence of voltage sag to electric equipment has become big issues because of wider utilization of voltage sensitive devices. In order to reduce the influence of voltage sag appearing at each customer side, it is necessary to recognize the level of receiving voltage drop due to lightning faults for transmission line. However it is hard to measure directly those sag level at every load node. In this report, a new method of efficiently estimating system voltage sag profile is proposed based on symmetrical coordinate. In the proposed method, limited recorded sag data is used as the estimation condition which is recorded at each substation in power systems. From the point of view that the number of the recorded node is generally far less than those of the transmission route, a fast solution method is developed to calculate only recorder faulted voltage by applying reciprocity theorem for Y matrix. Furthermore, effective screening process is incorporated, in which the limited candidate of faulted transmission line can be chosen. Demonstrative results are presented using the IEEJ East10 standard system and actual 1700 bus system. The results show that estimation accuracy is sufficiently acceptable under less computation labor.

Statistical Evaluation of Voltage Variation of Power Distribution System with Clustered Home-Cogeneration Systems

NASA Astrophysics Data System (ADS)

Kato, Takeyoshi; Minagata, Atsushi; Suzuoki, Yasuo

This paper discusses the influence of mass installation of a home co-generation system (H-CGS) using a polymer electrolyte fuel cell (PEFC) on the voltage profile of power distribution system in residential area. The influence of H-CGS is compared with that of photovoltaic power generation systems (PV systems). The operation pattern of H-CGS is assumed based on the electricity and hot-water demand observed in 10 households for a year. The main results are as follows. With the clustered H-CGS, the voltage of each bus is higher by about 1-3% compared with the conventional system without any distributed generators. Because H-CGS tends to increase the output during the early evening, H-CGS contributes to recover the voltage drop during the early evening, resulting in smaller voltage variation of distribution system throughout a day. Because of small rated power output about 1kW, the influence on voltage profile by the clustered H-CGS is smaller than that by the clustered PV systems. The highest voltage during the day time is not so high as compared with the distribution system with the clustered PV systems, even if the reverse power flow from H-CGS is allowed.

An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs)

NASA Astrophysics Data System (ADS)

Chuang, Hsueh-Hua

The purpose of this dissertation is to develop an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a circuit network modeling approach. This iterative model divides the VCSEL structure into numerous annular elements and uses a circuit network consisting of resistors and diodes. The measured sheet resistance of the p-distributed Bragg reflector (DBR), the measured sheet resistance of the layers under the oxide layer, and two empirical adjustable parameters are used as inputs to the iterative model to determine the resistance of each resistor. The two empirical values are related to the anisotropy of the resistivity of the p-DBR structure. The spontaneous current, stimulated current, and surface recombination current are accounted for by the diodes. The lateral carrier transport in the quantum well region is analyzed using drift and diffusion currents. The optical gain is calculated as a function of wavelength and carrier density from fundamental principles. The predicted threshold current densities for these VCSELs match the experimentally measured current densities over the wavelength range of 0.83 mum to 0.86 mum with an error of less than 5%. This model includes the effects of the resistance of the p-DBR mirrors, the oxide current-confining layer and spatial hole burning. Our model shows that higher sheet resistance under the oxide layer reduces the threshold current, but also reduces the current range over which single transverse mode operation occurs. The spatial hole burning profile depends on the lateral drift and diffusion of carriers in the quantum wells but is dominated by the voltage drop across the p-DBR region. To my knowledge, for the first time, the drift current and the diffusion current are treated separately. Previous work uses an ambipolar approach, which underestimates the total charge transferred in the quantum well region, especially under the oxide region. However, the total result of the drift current and the diffusion current is less significant than the Ohmic current, especially in the cavity region. This simple iterative model is applied to commercially available oxide-confined VCSELs. The simulation results show excellent agreement with experimentally measured voltage-current curves (within 3.7% for a 10 mum and within 4% for a 5 mum diameter VCSEL) and light-current curves (within 2% for a 10 mum and within 9% for a 5 mum diameter VCSEL) curves and provides insight into the detailed distributions of current and voltage within a VCSEL. This difference between the theoretically calculated results and the measured results is less than the variation shown in the data sheets for production VCSELs.

Reversible Ammonia Sorption for the Primary Life Support System (PLSS)

NASA Technical Reports Server (NTRS)

Wojtowicz, Marek A.; Cosgrove, Joseph E.; Serio, Michael A.; Jennings, Mallory A.

2012-01-01

Results are presented on the development of regenerable trace-contaminant (TC) sorbent for use in Extravehicular Activities (EVAs), and more specifically in the Primary Life Support System (PLSS). Since ammonia is the most important TC to be captured, data presented in this paper are limited to ammonia sorption, with results relevant to other TCs to be reported at a later time. The currently available TC-control technology involves the use of a packed bed of acid-impregnated granular charcoal. The sorbent is non-regenerable, and its use is associated with appreciable pressure drop, i.e. power consumption. The objective of this work is to demonstrate the feasibility of using vacuum-regenerable sorbents for PLSS application. In this study, several carbon sorbent monoliths were fabricated and tested. Multiple adsorption/vacuum-regeneration cycles were demonstrated at room temperature, as well as carbon surface conditioning that enhances ammonia sorption without impairing sorbent regeneration. Depending on sorbent monolith geometry, the reduction in pressure drop with respect to granular sorbent was found to be between 50% and two orders of magnitude. Resistive heating of the carbon sorbent monolith was demonstrated by applying voltage to the opposite ends of the monolith.

ALDO: A radiation-tolerant, low-noise, adjustable low drop-out linear regulator in 0.35 μm CMOS technology

NASA Astrophysics Data System (ADS)

Carniti, P.; Cassina, L.; Gotti, C.; Maino, M.; Pessina, G.

2016-07-01

In this work we present ALDO, an adjustable low drop-out linear regulator designed in AMS 0.35 μm CMOS technology. It is specifically tailored for use in the upgraded LHCb RICH detector in order to improve the power supply noise for the front end readout chip (CLARO). ALDO is designed with radiation-tolerant solutions such as an all-MOS band-gap voltage reference and layout techniques aiming to make it able to operate in harsh environments like High Energy Physics accelerators. It is capable of driving up to 200 mA while keeping an adequate power supply filtering capability in a very wide frequency range from 10 Hz up to 100 MHz. This property allows us to suppress the noise and high frequency spikes that could be generated by a DC/DC regulator, for example. ALDO also shows a very low noise of 11.6 μV RMS in the same frequency range. Its output is protected with over-current and short detection circuits for a safe integration in tightly packed environments. Design solutions and measurements of the first prototype are presented.

Study of Electromagnetic Repulsion Switch to High Speed Reclosing and Recover Time Characteristics of Superconductor

NASA Astrophysics Data System (ADS)

Koyama, Tomonori; Kaiho, Katsuyuki; Yamaguchi, Iwao; Yanabu, Satoru

Using a high-temperature superconductor, we constructed and tested a model superconducting fault current limiter (SFCL). The superconductor and vacuum interrupter as the commutation switch were connected in parallel using a bypass coil. When the fault current flows in this equipment, the superconductor is quenched and the current is then transferred to the parallel coil due to the voltage drop in the superconductor. This large current in the parallel coil actuates the magnetic repulsion mechanism of the vacuum interrupter and the current in the superconductor is broken. Using this equipment, the current flow time in the superconductor can be easily minimized. On the other hand, the fault current is also easily limited by large reactance of the parallel coil. This system has many merits. So, we introduced to electromagnetic repulsion switch. There is duty of high speed re-closing after interrupting fault current in the electrical power system. So the SFCL should be recovered to superconducting state before high speed re-closing. But, superconductor generated heat at the time of quench. It takes time to recover superconducting state. Therefore it is a matter of recovery time. In this paper, we studied recovery time of superconductor. Also, we proposed electromagnetic repulsion switch with reclosing system.

Development of high temperature calorimeter: heat capacity measurement by direct heating pulse calorimetry

NASA Astrophysics Data System (ADS)

Arita, Yuji; Suzuki, Keisuke; Matsui, Tsuneo

2005-02-01

The temperature limit for heat capacity measurements with the direct heating pulse calorimeter has been increased up to 2000 K by means of the combination of an optical pyrometer to detect the relative temperature change with tungsten rhenium thermocouples to determine absolute temperatures. With this improved calorimeter the heat capacities were measured up to 1950 K, for SiC and B4C, and 2000 K for graphite. The heat capacity values obtained in this study were in good agreement, within the error of ±5%, with those previous values calculated from the enthalpy data by drop method. The electrical conductivities of SiC, B4C and graphite were also simultaneously determined from the inducted voltage and the current for heat capacity measurement.

Implementation of a self-controlling heater

NASA Technical Reports Server (NTRS)

Strange, M. G.

1973-01-01

Temperature control of radiation sensors, targets, and other critical components is a common requirement in modern scientific instruments. Conventional control systems use a heater and a temperature sensor mounted on the body to be controlled. For proportional control, the sensor provides feedback to circuitry which drives the heater with an amount of power proportional to the temperature error. It is impractical or undesirable to mount both a heater and a sensor on certain components such as ultra-small parts or thin filaments. In principle, a variable current through the element is used for heating, and the change in voltage drop due to the element's temperature coefficient is separated and used to monitor or control its own temperature. Since there are no thermal propagation delays between heater and sensor, such control systems are exceptionally stable.

Effect of energetic electrons on dust charging in hot cathode filament discharge

NASA Astrophysics Data System (ADS)

Kakati, B.; Kausik, S. S.; Saikia, B. K.; Bandyopadhyay, M.

2011-03-01

The effect of energetic electrons on dust charging for different types of dust is studied in hydrogen plasma. The hydrogen plasma is produced by hot cathode filament discharge method in a dusty plasma device. A full line cusped magnetic field cage is used to confine the plasma elements. To study the plasma parameters for various discharge conditions, a cylindrical Langmuir probe having 0.15 mm diameter and 10.0 mm length is used. An electronically controlled dust dropper is used to drop the dust particles into the plasma. For different discharge conditions, the dust current is measured using a Faraday cup connected to an electrometer. The effect of secondary emission as well as discharge voltage on charging of dust grains in hydrogen plasma is studied with different dust.

Gas discharge visualization evaluation of ultramolecular doses of homeopathic medicines under blinded, controlled conditions.

PubMed

Bell, Iris R; Lewis, Daniel A; Brooks, Audrey J; Lewis, Sabrina E; Schwartz, Gary E

2003-02-01

To determine the feasibility of using a computerized biophysical method, gas discharge visualization (GDV), to differentiate ultramolecular doses of homeopathic remedies from solvent controls and from each other. Blinded, randomized assessment of four split samples each of 30c potencies of three homeopathic remedies from different kingdoms, for example, Natrum muriaticum (mineral), Pulsatilla (plant), and Lachesis (animal), dissolved in a 20% alcohol-water solvent versus two different control solutions (that is, solvent with untreated lactose/sucrose pellets and unsuccussed solvent alone). GDV measurements, involving application of a brief electrical impulse at four different voltage levels, were performed over 10 successive images on each of 10 drops from each bottle (total 400 images per test solution per voltage). The dependent variables were the quantified image characteristics of the liquid drops (form coefficient, area, and brightness) from the resultant burst of electron-ion emission and optical radiation in the visual and ultraviolet ranges. The procedure generated measurable images at the two highest voltage levels. At 17 kV, the remedies exhibited overall lower image parameter values compared with solvents (significant for Pulsatilla and Lachesis), as well as differences from solvents in fluctuations over repeated images (exposures to the same voltage). At 24 kV, other patterns emerged, with individual remedies showing higher or lower image parameters compared with other remedies and the solvent controls. GDV technology may provide an electromagnetic probe into the properties of homeopathic remedies as distinguished from solvent controls. However, the present findings also highlight the need for additional research to evaluate factors that may affect reproducibility of results.

Scanning Tunneling Optical Resonance Microscopy

NASA Technical Reports Server (NTRS)

Bailey, Sheila; Wilt, Dave; Raffaelle, Ryne; Gennett, Tom; Tin, Padetha; Lau, Janice; Castro, Stephanie; Jenkins, Philip; Scheiman, Dave

2003-01-01

Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically < 10 Hz) that the feedback circuit could respond, then the voltage applied to the piezoelectric tip-height actuator could be measured by use of a lock-in amplifier locked to the modulation (chopping) signal. However, at a high modulation frequency (typically in the kilohertz range or higher), the feedback circuit would be unable to respond. In this case, the photoenhanced portion of the tunneling current could be measured directly. For this purpose, the tunneling current would be passed through a precise resistor and the voltage drop would be measured by use of the lock-in amplifier.

Electric breakdowns of the "plasma capacitors" occurs on insulation coating of the ISS surface

NASA Astrophysics Data System (ADS)

Homin, Taras; Korsun, Anatolii

High electric fields and currents are occurred in the spacecrafts plasma environment by onboard electric generators. Thus the high voltage solar array (SA) of the American segment of International Space Station (ISS) generates potential 160 V. Its negative pole is shorted to the frames of all the ISS segments. There is electric current between the SA and the frame through the plasma environment, i.e. electric discharge occurs. As a result a potential drop exists between the frames of all the ISS segments and the environmental plasma [1], which is cathode drop potential varphi _{c} defined. When ISS orbiting, the φc varies greatly in the range 0-100 V. A large area of the ISS frames and SA surface is coated with a thin dielectric film. Because of cathode drop potential the frame surfaces accumulate ion charges and the SA surfaces accumulate electron charges. These surfaces become plasma capacitors, which accumulate much charge and energy. Micrometeorite impacts or buildup of potential drop in excess of breakdown threshold varphi_{b} (varphi _{c} > varphi _{b} = 60 V) may cause breakdowns of these capacitors. Following a breakdown, the charge collected at the surfaces disperses and transforms into a layer of dense plasma [2]. This plasma environment of the spacecraft produces great pulsed electric fields E at the frame surfaces as well as heavy currents between construction elements which in turn induce great magnetic fields H. Therefore the conductive frame and the environmental plasma is plasma inductors. We have calculated that the densities of these pulsing and high-frequency fields E and H generated in the plasma environment of the spacecraft may exceed values hazardous to human. Besides, these fields must induce large electromagnetic impulses in the space-suit and in the power supply and control circuits of onboard systems. During astronaut’s space-suit activity, these fields will penetrate the space-suit and the human body with possible hazardous effects. These effects need to be studied, and appropriate remedies are to be developed. References 1. Mikatarian, R., et al., «Electrical Charging of the International Space Station», AIAA Paper No. 2003-1079, 41th. Aerospace Sciences Meeting and Exhibit, January 2003. 2. A.G. Korsun, «Electric discharge processes intensification mechanisms on International Space Station surface». Astronautics and rocket production, 1, 2011 (in Russian).

Combinatorial approach toward high-throughput analysis of direct methanol fuel cells.

PubMed

Jiang, Rongzhong; Rong, Charles; Chu, Deryn

2005-01-01

A 40-member array of direct methanol fuel cells (with stationary fuel and convective air supplies) was generated by electrically connecting the fuel cells in series. High-throughput analysis of these fuel cells was realized by fast screening of voltages between the two terminals of a fuel cell at constant current discharge. A large number of voltage-current curves (200) were obtained by screening the voltages through multiple small-current steps. Gaussian distribution was used to statistically analyze the large number of experimental data. The standard deviation (sigma) of voltages of these fuel cells increased linearly with discharge current. The voltage-current curves at various fuel concentrations were simulated with an empirical equation of voltage versus current and a linear equation of sigma versus current. The simulated voltage-current curves fitted the experimental data well. With increasing methanol concentration from 0.5 to 4.0 M, the Tafel slope of the voltage-current curves (at sigma=0.0), changed from 28 to 91 mV.dec-1, the cell resistance from 2.91 to 0.18 Omega, and the power output from 3 to 18 mW.cm-2.

Mussel-inspired one-pot synthesis of transition metal and nitrogen co-doped carbon (M/N-C) as efficient oxygen catalysts for Zn-air batteries

NASA Astrophysics Data System (ADS)

Li, Bing; Chen, Ye; Ge, Xiaoming; Chai, Jianwei; Zhang, Xiao; Hor, T. S. Andy; Du, Guojun; Liu, Zhaolin; Zhang, Hua; Zong, Yun

2016-02-01

Transition metal and nitrogen co-doping into carbon is an effective approach to promote the catalytic activities towards the oxygen reduction reaction (ORR) and/or oxygen evolution reaction (OER) in the resultant electrocatalysts, M/N-C. The preparation of such catalysts, however, is often complicated and in low yield. Herein we report a robust approach for easy synthesis of M/N-C hybrids in high yield, which includes a mussel-inspired polymerization reaction at room temperature and a subsequent carbonization process. With the introduction of selected transition metal salts into an aqueous solution of dopamine (DA), the obtained mixture self-polymerizes to form metal-containing polydopamine (M-PDA) composites, e.g. Co-PDA, Ni-PDA and Fe-PDA. Upon carbonization at elevated temperatures, these metal-containing composites were converted into M/N-C, i.e. Co-PDA-C, Ni-PDA-C and Fe-PDA-C, respectively, whose morphologies, chemical compositions, and electrochemical performances were fully studied. Enhanced ORR activities were found in all the obtained hybrids, with Co-PDA-C standing out as the most promising catalyst with excellent stability and catalytic activities towards both ORR and OER. This was further proven in Zn-air batteries (ZnABs) in terms of discharge voltage stability and cycling performance. At a discharge-charge current density of 2 mA cm-2 and 1 h per cycle, the Co-PDA-C based ZnABs were able to steadily cycle up to 500 cycles with only a small increase in the discharge-charge voltage gap which notably outperformed Pt/C; at a discharge current density of 5 mA cm-2, the battery continuously discharged for more than 540 h with the discharge voltage above 1 V and a voltage drop rate of merely 0.37 mV h-1. With the simplicity and scalability of the synthetic approach and remarkable battery performances, the Co-PDA-C hybrid catalyst is anticipated to play an important role in practical ZnABs.Transition metal and nitrogen co-doping into carbon is an effective approach to promote the catalytic activities towards the oxygen reduction reaction (ORR) and/or oxygen evolution reaction (OER) in the resultant electrocatalysts, M/N-C. The preparation of such catalysts, however, is often complicated and in low yield. Herein we report a robust approach for easy synthesis of M/N-C hybrids in high yield, which includes a mussel-inspired polymerization reaction at room temperature and a subsequent carbonization process. With the introduction of selected transition metal salts into an aqueous solution of dopamine (DA), the obtained mixture self-polymerizes to form metal-containing polydopamine (M-PDA) composites, e.g. Co-PDA, Ni-PDA and Fe-PDA. Upon carbonization at elevated temperatures, these metal-containing composites were converted into M/N-C, i.e. Co-PDA-C, Ni-PDA-C and Fe-PDA-C, respectively, whose morphologies, chemical compositions, and electrochemical performances were fully studied. Enhanced ORR activities were found in all the obtained hybrids, with Co-PDA-C standing out as the most promising catalyst with excellent stability and catalytic activities towards both ORR and OER. This was further proven in Zn-air batteries (ZnABs) in terms of discharge voltage stability and cycling performance. At a discharge-charge current density of 2 mA cm-2 and 1 h per cycle, the Co-PDA-C based ZnABs were able to steadily cycle up to 500 cycles with only a small increase in the discharge-charge voltage gap which notably outperformed Pt/C; at a discharge current density of 5 mA cm-2, the battery continuously discharged for more than 540 h with the discharge voltage above 1 V and a voltage drop rate of merely 0.37 mV h-1. With the simplicity and scalability of the synthetic approach and remarkable battery performances, the Co-PDA-C hybrid catalyst is anticipated to play an important role in practical ZnABs. Electronic supplementary information (ESI) available: Schematic structure of ZnAB; photos of home-made ZnABs; EDX spectra and elemental mapping of M-PDA-C; N2 adsorption/desorption isotherms, high magnification TEM images of M-PDA-C, and RDE data of M-PDA-C, etc. See DOI: 10.1039/c5nr06538k

Symmetric voltage-controlled variable resistance

NASA Technical Reports Server (NTRS)

Vanelli, J. C.

1978-01-01

Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

Structural and emission characteristics of ion-irradiated Reticulated Vitreous Carbon

NASA Astrophysics Data System (ADS)

Chacon, Judith Rebecca

Cathodes formed from Reticulated Vitreous Carbon (RVC) were treated under varying conditions of Argon-ion beam current, beam voltage and irradiation duration. Surface structures, such as balls, cones, nanowires, and nanowhiskers were formed in the RVC network through a series of ion-impact sputtering and self-diffusion reactions. Raman shifts to the D and E2g' peak suggest C=C bonding within the original RVC structure was converted to the lesser-bound C-C bonding structure. Cathodes demonstrating the most stable electronic configuration exhibited significant vertical growth to graphitic domains as determined by calculations based on XRD measurements. Carbon nanotubes at the surface were observed at the surface through micro-Raman techniques. The surface structures formed by argon-bombardment, are responsible for cathodes exhibiting lower field-emission extraction fields. The electric field required for the onset of electron emission was measured to change from 6.03 V/micron in non-irradiated RVC to 1.62V/micron for RVC irradiated for 15 minutes at a beam voltage of 1200V and beam current of 200mA (ion-beam current density 2.24mA/cm2). Treated surfaces were also responsible for increased stability in emission over time. For untreated RVC, the field required for emission dropped 25% over a 48 hour training period, whilst modestly treated RVC (15min, 1200V, 100mA, or 1.52mA/cm2) rose as little as 3%. Field-emissive RVC, is an inexpensively produced, mechanically robust cathode with potential applications in lighting, displays and microwave sources.

Identification of a vacuolar proton channel that triggers the bioluminescent flash in dinoflagellates.

PubMed

Rodriguez, Juan D; Haq, Saddef; Bachvaroff, Tsvetan; Nowak, Kristine F; Nowak, Scott J; Morgan, Deri; Cherny, Vladimir V; Sapp, Maredith M; Bernstein, Steven; Bolt, Andrew; DeCoursey, Thomas E; Place, Allen R; Smith, Susan M E

2017-01-01

In 1972, J. Woodland Hastings and colleagues predicted the existence of a proton selective channel (HV1) that opens in response to depolarizing voltage across the vacuole membrane of bioluminescent dinoflagellates and conducts protons into specialized luminescence compartments (scintillons), thereby causing a pH drop that triggers light emission. HV1 channels were subsequently identified and demonstrated to have important functions in a multitude of eukaryotic cells. Here we report a predicted protein from Lingulodinium polyedrum that displays hallmark properties of bona fide HV1, including time-dependent opening with depolarization, perfect proton selectivity, and characteristic ΔpH dependent gating. Western blotting and fluorescence confocal microscopy of isolated L. polyedrum scintillons immunostained with antibody to LpHV1 confirm LpHV1's predicted organellar location. Proteomics analysis demonstrates that isolated scintillon preparations contain peptides that map to LpHV1. Finally, Zn2+ inhibits both LpHV1 proton current and the acid-induced flash in isolated scintillons. These results implicate LpHV1 as the voltage gated proton channel that triggers bioluminescence in L. polyedrum, confirming Hastings' hypothesis. The same channel likely mediates the action potential that communicates the signal along the tonoplast to the scintillon.

Extended-testing of xenon ion thruster hollow cathodes

NASA Technical Reports Server (NTRS)

Sarver-Verhey, Timothy R.

1992-01-01

A hollow cathode wear-test of 508 hours was successfully completed at an emission current of 23.0 A and a xenon flow rate of 10 Pa-L/s. This test was the continuation of a hollow cathode contamination investigation. Discharge voltage was stable at 16.7 V. The cathode temperature averaged 1050 C with a 7 percent drop during the wear-test. Discharge ignition voltage was found to be approximately 20 V and was repeatable over four starts. Post-test analyses of the hollow cathode found a much improved internal cathode condition with respect to earlier wear-test cathodes. Negligible tungsten movement occurred and no formation of mono-barium tungsten was observed. These results correlated with an order-of-magnitude reduction in propellant feed-system leakage rate. Ba2CaWO6 and extensive calcium crystal formation occurred on the upstream end of the insert. Ba-Ca compound depositions were found on the Mo insert collar, on the Re electrical leads, and in the gap between the insert and cathode wall. This wear-test cathode was found to be in the best internal condition and had the most stable operating performance of any hollow cathode tested during this contamination investigation.

Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C- and Si- faces of SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aydogan, Pinar; Suzer, Sefik, E-mail: suzer@fen.bilkent.edu.tr; Arslan, Engin

2015-09-21

We report on an X-ray photoelectron spectroscopy (XPS) study of two graphene based devices that were analyzed by imposing a significant current under +3 V bias. The devices were fabricated as graphene layers(s) on hexagonal SiC substrates, either on the C- or Si-terminated faces. Position dependent potential distributions (IR-drop), as measured by variations in the binding energy of a C1s peak are observed to be sporadic for the C-face graphene sample, but very smooth for the Si-face one, although the latter is less conductive. We attribute these sporadic variations in the C-face device to the incomplete electrical decoupling between the graphenemore » layer(s) with the underlying buffer and/or substrate layers. Variations in the Si2p and O1s peaks of the underlayer(s) shed further light into the electrical interaction between graphene and other layers. Since the potential variations are amplified only under applied bias (voltage-contrast), our methodology gives unique, chemically specific electrical information that is difficult to obtain by other techniques.« less

Martian Atmospheric Pressure Static Charge Elimination Tool

NASA Technical Reports Server (NTRS)

Johansen, Michael R.

2014-01-01

A Martian pressure static charge elimination tool is currently in development in the Electrostatics and Surface Physics Laboratory (ESPL) at NASA's Kennedy Space Center. In standard Earth atmosphere conditions, static charge can be neutralized from an insulating surface using air ionizers. These air ionizers generate ions through corona breakdown. The Martian atmosphere is 7 Torr of mostly carbon dioxide, which makes it inherently difficult to use similar methods as those used for standard atmosphere static elimination tools. An initial prototype has been developed to show feasibility of static charge elimination at low pressure, using corona discharge. A needle point and thin wire loop are used as the corona generating electrodes. A photo of the test apparatus is shown below. Positive and negative high voltage pulses are sent to the needle point. This creates positive and negative ions that can be used for static charge neutralization. In a preliminary test, a floating metal plate was charged to approximately 600 volts under Martian atmospheric conditions. The static elimination tool was enabled and the voltage on the metal plate dropped rapidly to -100 volts. This test data is displayed below. Optimization is necessary to improve the electrostatic balance of the static elimination tool.

Axial p-n-junctions in nanowires.

PubMed

Fernandes, C; Shik, A; Byrne, K; Lynall, D; Blumin, M; Saveliev, I; Ruda, H E

2015-02-27

The charge distribution and potential profile of p-n-junctions in thin semiconductor nanowires (NWs) were analyzed. The characteristics of screening in one-dimensional systems result in a specific profile with large electric field at the boundary between the n- and p- regions, and long tails with a logarithmic drop in the potential and charge density. As a result of these tails, the junction properties depend sensitively on the geometry of external contacts and its capacity has an anomalously large value and frequency dispersion. In the presence of an external voltage, electrons and holes in the NWs can not be described by constant quasi-Fermi levels, due to small values of the average electric field, mobility, and lifetime of carriers. Thus, instead of the classical Sah-Noice-Shockley theory, the junction current-voltage characteristic was described by an alternative theory suitable for fast generation-recombination and slow diffusion-drift processes. For the non-uniform electric field in the junction, this theory predicts the forward branch of the characteristic to have a non-ideality factor η several times larger than the values 1 < η < 2 from classical theory. Such values of η have been experimentally observed by a number of researchers, as well as in the present work.

Identification of a vacuolar proton channel that triggers the bioluminescent flash in dinoflagellates

PubMed Central

Rodriguez, Juan D.; Haq, Saddef; Bachvaroff, Tsvetan; Nowak, Kristine F.; Nowak, Scott J.; Morgan, Deri; Cherny, Vladimir V.; Sapp, Maredith M.; Bernstein, Steven; Bolt, Andrew; DeCoursey, Thomas E.; Place, Allen R.; Smith, Susan M. E.

2017-01-01

In 1972, J. Woodland Hastings and colleagues predicted the existence of a proton selective channel (HV1) that opens in response to depolarizing voltage across the vacuole membrane of bioluminescent dinoflagellates and conducts protons into specialized luminescence compartments (scintillons), thereby causing a pH drop that triggers light emission. HV1 channels were subsequently identified and demonstrated to have important functions in a multitude of eukaryotic cells. Here we report a predicted protein from Lingulodinium polyedrum that displays hallmark properties of bona fide HV1, including time-dependent opening with depolarization, perfect proton selectivity, and characteristic ΔpH dependent gating. Western blotting and fluorescence confocal microscopy of isolated L. polyedrum scintillons immunostained with antibody to LpHV1 confirm LpHV1’s predicted organellar location. Proteomics analysis demonstrates that isolated scintillon preparations contain peptides that map to LpHV1. Finally, Zn2+ inhibits both LpHV1 proton current and the acid-induced flash in isolated scintillons. These results implicate LpHV1 as the voltage gated proton channel that triggers bioluminescence in L. polyedrum, confirming Hastings’ hypothesis. The same channel likely mediates the action potential that communicates the signal along the tonoplast to the scintillon. PMID:28178296

Electrodeless electro-hydrodynamic gentle printing of personalized medicines

NASA Astrophysics Data System (ADS)

Khusid, Boris; Elele, Ezinwa; Shen, Yueyang

2010-11-01

Drop-on-demand (DOD) principle appears to be a particular promising approach for manufacturing personalized treatments carefully tailored to a patient's genetic background. The authors have recently developed a DOD method for gentle printing of personalized medicines. A fluid is infused into an electrically insulating nozzle to form a pendant drop. A sufficiently strong voltage pulse is applied to external electrodes to stretch the pendant drop until it touches an electrically insulating film and forms a liquid bridge. As the liquid bridge is intentionally formed in an unstable configuration, it breaks up, creating two drops, one on the film and the other hanging from the nozzle. To prove the validity and versatility of the method, experiments are conducted on fluids whose viscosity, conductivity, dielectric constant, and surface tension vary over a broad range, respectively: 1-1045 cP, 0.02-290 μS/cm, 9-78, and 41-72 dyn/cm. We present a scaling analysis that captures the essential physics of drop evolution and provides the critical design guidelines. The work was supported by NSF Engineering Research Center on Structured Organic Particulate Systems.

Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's

NASA Technical Reports Server (NTRS)

Gruber, Robert P.; Gott, Robert W.

1991-01-01

In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.

Effects of acidic pH on voltage-gated ion channels in rat trigeminal mesencephalic nucleus neurons.

PubMed

Han, Jin-Eon; Cho, Jin-Hwa; Choi, In-Sun; Kim, Do-Yeon; Jang, Il-Sung

2017-03-01

The effects of acidic pH on several voltage-dependent ion channels, such as voltage-dependent K + and Ca 2+ channels, and hyperpolarization-gated and cyclic nucleotide-activated cation (HCN) channels, were examined using a whole-cell patch clamp technique on mechanically isolated rat mesencephalic trigeminal nucleus neurons. The application of a pH 6.5 solution had no effect on the peak amplitude of voltage-dependent K + currents. A pH 6.0 solution slightly, but significantly inhibited the peak amplitude of voltage-dependent K + currents. The pH 6.0 also shifted both the current-voltage and conductance-voltage relationships to the depolarization range. The application of a pH 6.5 solution scarcely affected the peak amplitude of membrane currents mediated by HCN channels, which were profoundly inhibited by the general HCN channel blocker Cs + (1 mM). However, the pH 6.0 solution slightly, but significantly inhibited the peak amplitude of HCN-mediated currents. Although the pH 6.0 solution showed complex modulation of the current-voltage and conductance-voltage relationships, the midpoint voltages for the activation of HCN channels were not changed by acidic pH. On the other hand, voltage-dependent Ca 2+ channels were significantly inhibited by an acidic pH. The application of an acidic pH solution significantly shifted the current-voltage and conductance-voltage relationships to the depolarization range. The modulation of several voltage-dependent ion channels by an acidic pH might affect the excitability of mesencephalic trigeminal nucleus neurons, and thus physiological functions mediated by the mesencephalic trigeminal nucleus could be affected in acidic pH conditions.

Corrosion Assessment of Steel Bars Used in Reinforced Concrete Structures by Means of Eddy Current Testing

PubMed Central

de Alcantara, Naasson P.; da Silva, Felipe M.; Guimarães, Mateus T.; Pereira, Matheus D.

2015-01-01

This paper presents a theoretical and experimental study on the use of Eddy Current Testing (ECT) to evaluate corrosion processes in steel bars used in reinforced concrete structures. The paper presents the mathematical basis of the ECT sensor built by the authors; followed by a finite element analysis. The results obtained in the simulations are compared with those obtained in experimental tests performed by the authors. Effective resistances and inductances; voltage drops and phase angles of wound coil are calculated using both; simulated and experimental data; and demonstrate a strong correlation. The production of samples of corroded steel bars; by using an impressed current technique is also presented. The authors performed experimental tests in the laboratory using handmade sensors; and the corroded samples. In the tests four gauges; with five levels of loss-of-mass references for each one were used. The results are analyzed in the light of the loss-of-mass and show a strong linear behavior for the analyzed parameters. The conclusions emphasize the feasibility of the proposed technique and highlight opportunities for future works. PMID:26712754

α-Dendrotoxin inhibits the ASIC current in dorsal root ganglion neurons from rat.

PubMed

Báez, Adriana; Salceda, Emilio; Fló, Martín; Graña, Martín; Fernández, Cecilia; Vega, Rosario; Soto, Enrique

2015-10-08

Dendrotoxins are a group of peptide toxins purified from the venom of several mamba snakes. α-Dendrotoxin (α-DTx, from the Eastern green mamba Dendroaspis angusticeps) is a well-known blocker of voltage-gated K(+) channels and specifically of K(v)1.1, K(v)1.2 and K(v)1.6. In this work we show that α-DTx inhibited the ASIC currents in DRG neurons (IC50=0.8 μM) when continuously perfused during 25 s (including a 5 s pulse to pH 6.1), but not when co-applied with the pH drop. Additionally, we show that α-DTx abolished a transient component of the outward current that, in some experiments, appeared immediately after the end of the acid pulse. Our data indicate that α-DTx inhibits ASICs in the high nM range while some Kv are inhibited in the low nM range. The α-DTx selectivity and its potential interaction with ASICs should be taken in consideration when DTx is used in the high nM range. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Experimental demonstration of plasma startup by coaxial helicity injection

NASA Astrophysics Data System (ADS)

Raman, R.; Jarboe, T. R.; Nelson, B. A.; Hamp, W. T.; Izzo, V. A.; O'Neill, R. G.; Redd, A. J.; Sieck, P. E.; Smith, R. J.

2004-05-01

Experimental results on the transfer of a coaxial-helicity-injection (CHI) produced discharge to inductive operation are reported. CHI assisted plasma startup is more robust than inductive only operation and reduces volt-seconds consumption. After handoff to inductive operation, the initial 100 kA of CHI produced current drops to 50 kA, then ramps up to 180 kA, using only 30 mVs, about 40% higher than that produced by induction alone. Results show that initiation of CHI discharges at lower densities produce higher levels of coupling current. Coupling a CHI produced discharge to induction from a precharged central solenoid has produced record currents of 290 kA using only 52 mWb of central solenoid flux. CHI discharges can also be generated while the central transformer is in the process of being precharged, during which period it induces a negative loop voltage on the CHI discharge. These significant results were obtained on the Helicity Injected Torus-II (HIT-II) [T.R. Jarboe, Fusion Technol. 15, 7 (1989)] spherical torus experiment (major/minor radius of 0.3/0.2 m and elongation of 1.5).

Corrosion Assessment of Steel Bars Used in Reinforced Concrete Structures by Means of Eddy Current Testing.

PubMed

de Alcantara, Naasson P; da Silva, Felipe M; Guimarães, Mateus T; Pereira, Matheus D

2015-12-24

This paper presents a theoretical and experimental study on the use of Eddy Current Testing (ECT) to evaluate corrosion processes in steel bars used in reinforced concrete structures. The paper presents the mathematical basis of the ECT sensor built by the authors; followed by a finite element analysis. The results obtained in the simulations are compared with those obtained in experimental tests performed by the authors. Effective resistances and inductances; voltage drops and phase angles of wound coil are calculated using both; simulated and experimental data; and demonstrate a strong correlation. The production of samples of corroded steel bars; by using an impressed current technique is also presented. The authors performed experimental tests in the laboratory using handmade sensors; and the corroded samples. In the tests four gauges; with five levels of loss-of-mass references for each one were used. The results are analyzed in the light of the loss-of-mass and show a strong linear behavior for the analyzed parameters. The conclusions emphasize the feasibility of the proposed technique and highlight opportunities for future works.

RF lockout circuit for electronic locking system

NASA Astrophysics Data System (ADS)

Becker, Earl M., Jr.; Miller, Allen

1991-02-01

An electronics lockout circuit was invented that includes an antenna adapted to receive radio frequency signals from a transmitter, and a radio frequency detector circuit which converts the radio frequency signals into a first direct current voltage indicative of the relative strength of the field resulting from the radio frequency signals. The first direct current voltage is supplied to a trigger circuit which compares this direct current voltage to an adjustable direct current reference voltage. This provides a second direct current voltage at the output whenever the amplitude of the first direct current voltage exceeds the amplitude of the reference voltage provided by the comparator circuit. This is supplied to a disconnect relay circuit which, upon receiving a signal from the electronic control unit of an electronic combination lock during the time period at which the second direct current voltage is present, isolates the door strike coil of a security door from the electronic control unit. This prevents signals falsely generated by the electronic control unit because of radio frequency signals in the vicinity of the electronic control unit energizing the door strike coil and accidentally opening a security door.

A triple hybrid micropower generator with simultaneous multi-mode energy harvesting

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. P. M. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2018-01-01

This study presents a triple hybrid energy harvesting system that combines harvested power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters into a single DC supply. A power management circuit is designed and implemented in 180 nm standard CMOS technology based on the distinct requirements of each harvester, and is terminated with a Schottky diode to avoid reverse current flow. The system topology hence supports simultaneous power generation and delivery from low and high frequency vibrations as well as temperature differences in the environment. The ultra-low DC voltage harvested from TE generator is boosted with a cross-coupled charge-pump driven by an LC oscillator with fully-integrated center-tapped differential inductors. The EM harvester output was rectified with a self-powered and low drop-out AC/DC doubler circuit. The PZT interface electronics benefits from peak-to-peak cycle of the harvested voltage through a negative voltage converter followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The hybrid system was tested with a wearable in-house EM energy harvester placed wrist of a jogger, a commercial low volume PZT harvester, and DC supply as the TE generator output. The system generates more than 1.2 V output for load resistances higher than 50 kΩ, which corresponds to 24 μW to power wearable sensors. Simultaneous multi-mode operation achieves higher voltage and power compared to stand-alone harvesting circuits, and generates up to 110 μW of output power. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

Cascaded resonant bridge converters

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor)

1989-01-01

A converter for converting a low voltage direct current power source to a higher voltage, high frequency alternating current output for use in an electrical system where it is desired to use low weight cables and other circuit elements. The converter has a first stage series resonant (Schwarz) converter which converts the direct current power source to an alternating current by means of switching elements that are operated by a variable frequency voltage regulator, a transformer to step up the voltage of the alternating current, and a rectifier bridge to convert the alternating current to a direct current first stage output. The converter further has a second stage series resonant (Schwarz) converter which is connected in series to the first stage converter to receive its direct current output and convert it to a second stage high frequency alternating current output by means of switching elements that are operated by a fixed frequency oscillator. The voltage of the second stage output is controlled at a relatively constant value by controlling the first stage output voltage, which is accomplished by controlling the frequency of the first stage variable frequency voltage controller in response to second stage voltage. Fault tolerance in the event of a load short circuit is provided by making the operation of the first stage variable frequency voltage controller responsive to first and second stage current limiting devices. The second stage output is connected to a rectifier bridge whose output is connected to the input of the second stage to provide good regulation of output voltage wave form at low system loads.

Electrical breakdown and nanogap formation of indium oxide core/shell heterostructure nanowires.

PubMed

Jung, Minkyung; Song, Woon; Sung Lee, Joon; Kim, Nam; Kim, Jinhee; Park, Jeunghee; Lee, Hyoyoung; Hirakawa, Kazuhiko

2008-12-10

We report the electrical breakdown behavior and subsequent nanogap formation of In(2)O(3)/InO(x) core/shell heterostructure nanowires with substrate-supported and suspended structures. The radial heterostructure nanowires, composed of crystalline In(2)O(3) cores and amorphous In-rich shells, are grown by chemical vapor deposition. As the nanowires broke down, they exhibited two distinct current drops in the current-voltage characteristics. The tips of the broken nanowires were found to have a cone or a volcano shape depending on the width of the nanowire. The shape, the size, and the position of the nanogap depend strongly on the device structure and the nanowire dimensions. The substrate-supported and the suspended devices exhibit distinct breakdown behavior which can be explained by the diffusive thermal transport model. The breakdown temperature of the nanowire is estimated to be about 450 K, close to the melting temperature of indium. We demonstrated the usefulness of this technique by successful fabrication of working pentacene field-effect transistors.

Temporal and spatial evolution of runaway electrons at the instability moments in Damavand tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pourshahab, B.; Abdi, M. R.; Sadighzadeh, A.

2016-07-15

The time and position behavior of runaway electrons at the Parail–Pogutse instability moments has been investigated using experimental observations in plasma current, loop voltage, the Hard X-ray (HXR) radiations, and 18 poloidal pickup coils signals received by data acquisition system simultaneously. The conditional average sampling (CAS) method was used to analyze the output data. Moreover, a filament current code was modified to study the runaway electrons beam movement in the event of instabilities. The results display a rapid drift of runaway beam toward the inner wall of the vacuum vessel and the collision with the wall components at the instabilitymore » moments. The existence of the collisions in these experiments is evident in the HXR bursts which are considered as the main trigger for CAS Analysis. Also, the variation of HXR bursts with the toroidal magnetic field shows that the hard X-ray bursts drop with increase in the toroidal magnetic field and runaway electrons confinement quality.« less

Self-Heating Effects In Polysilicon Source Gated Transistors

PubMed Central

Sporea, R. A.; Burridge, T.; Silva, S. R. P.

2015-01-01

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs. PMID:26351099

High-voltage, high-current, solid-state closing switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

Inverter ratio failure detector

NASA Technical Reports Server (NTRS)

Wagner, A. P.; Ebersole, T. J.; Andrews, R. E. (Inventor)

1974-01-01

A failure detector which detects the failure of a dc to ac inverter is disclosed. The inverter under failureless conditions is characterized by a known linear relationship of its input and output voltages and by a known linear relationship of its input and output currents. The detector includes circuitry which is responsive to the detector's input and output voltages and which provides a failure-indicating signal only when the monitored output voltage is less by a selected factor, than the expected output voltage for the monitored input voltage, based on the known voltages' relationship. Similarly, the detector includes circuitry which is responsive to the input and output currents and provides a failure-indicating signal only when the input current exceeds by a selected factor the expected input current for the monitored output current based on the known currents' relationship.

Apparatuses and methods for generating electric fields

DOEpatents

Scott, Jill R; McJunkin, Timothy R; Tremblay, Paul L

2013-08-06

Apparatuses and methods relating to generating an electric field are disclosed. An electric field generator may include a semiconductive material configured in a physical shape substantially different from a shape of an electric field to be generated thereby. The electric field is generated when a voltage drop exists across the semiconductive material. A method for generating an electric field may include applying a voltage to a shaped semiconductive material to generate a complex, substantially nonlinear electric field. The shape of the complex, substantially nonlinear electric field may be configured for directing charged particles to a desired location. Other apparatuses and methods are disclosed.

Superstructures and Electronic Properties of Manganese-Phthalocyanine Molecules on Au(110) from Submonolayer Coverage to Ultrathin Molecular Films.

PubMed

Topyła, M; Néel, N; Kröger, J

2016-07-12

The adsorption of manganese-phthalocyanine molecules on Au(110) was investigated using a low-temperature scanning tunneling microscope. A rich variety of commensurate superstructures was observed upon increasing the molecule coverage from submonolayers to ultrathin films. All structures were associated with reconstructions of the Au(110) substrate. Molecules adsorbed in the second molecular layer exhibited negative differential conductance occurring symmetrically around zero bias voltage. A double-barrier tunneling model rationalized this observation in terms of a peaked molecular resonance at the Fermi energy together with a voltage drop across the molecular film.

Logarithmic circuit with wide dynamic range

NASA Technical Reports Server (NTRS)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

Programmable high-output-impedance, large-voltage compliance, microstimulator for low-voltage biomedical applications.

PubMed

Farahmand, Sina; Maghami, Mohammad Hossein; Sodagar, Amir M

2012-01-01

This paper reports on the design of a programmable, high output impedance, large voltage compliance microstimulator for low-voltage biomedical applications. A 6-bit binary-weighted digital to analog converter (DAC) is used to generate biphasic stimulus current pulses. A compact current mirror with large output voltage compliance and high output resistance conveys the current pulses to the target tissue. Designed and simulated in a standard 0.18µm CMOS process, the microstimulator circuit is capable of delivering a maximum stimulation current of 160µA to a 10-kΩ resistive load. Operated at a 1.8-V supply voltage, the output stage exhibits a voltage compliance of 1.69V and output resistance of 160MΩ at full scale stimulus current. Layout of the core microelectrode circuit measures 25.5µm×31.5µm.

Heart rate detection from single-foot plantar bioimpedance measurements in a weighing scale.

PubMed

Diaz, Delia H; Casas, Oscar; Pallas-Areny, Ramon

2010-01-01

Electronic bathroom scales are an easy-to-use, affordable mean to measure physiological parameters in addition to body weight. They have been proposed to obtain the ballistocardiogram (BCG) and derive from it the heart rate, cardiac output and systolic blood pressure. Therefore, weighing scales may suit intermittent monitoring in e-health and patient screening. Scales intended for bioelectrical impedance analysis (BIA) have also been proposed to estimate the heart rate by amplifying the pulsatile impedance component superimposed on the basal impedance. However, electronic weighing scales cannot easily obtain the BCG from people that have a single leg neither are bioimpedance measurements between both feet recommended for people wearing a pacemaker or other electronic implants, neither for pregnant women. We propose a method to detect the heart rate (HR) from bioimpedance measured in a single foot while standing on an bathroom weighting scale intended for BIA. The electrodes built in the weighing scale are used to apply a 50 kHz voltage between the outer electrode pair and to measure the drop in voltage across the inner electrode pair. The agreement with the HR simultaneously obtained from the ECG is excellent. We have also compared the drop in voltage across the waist and the thorax with that obtained when measuring bioimpedance between both feet to compare the possible risk of the proposed method to that of existing BIA scales.

Jumping and trampolining of drops on hydrophobic surfaces, controlling energy transfer by timed electric actuation

NASA Astrophysics Data System (ADS)

Wang, Zhantao; Ende, Dirk Van Den; Pit, Arjen; Lagraauw, Rudy; Wijnperle, Daniel; Mugele, Frieder

2017-11-01

Electrowetting as a fast and efficient approach of manipulating droplet has found wide applications in microfluidics, and recently the potential of using electrowetting for 3-dimensional microfluidics was also demonstrated. Here the electrowetting-induced jumping of a single droplet on a superhydrophobic surface was studied in both air and ambient decane. The jumping height of the droplet was found to be not only voltage-dependent but also oscillating with the AC-pulse duration. We identify the electrowetting number as a crucial parameter in defining the resonant frequency of the droplet under actuation. Representing the drop by a simple oscillator, we establish a relation between the Eigen frequency of the drop and the optimum actuation time required for most efficient energy conversion. From a general perspective, our experiments illustrate a generic concept how timed actuation in combination with inertia can enhance the flexibility and efficiency of drop manipulation operations. Dutch Technology Foundation (STW) is acknowledged.

Associating ground magnetometer observations with current or voltage generators

NASA Astrophysics Data System (ADS)

Hartinger, M. D.; Xu, Z.; Clauer, C. R.; Yu, Y.; Weimer, D. R.; Kim, H.; Pilipenko, V.; Welling, D. T.; Behlke, R.; Willer, A. N.

2017-07-01

A circuit analogy for magnetosphere-ionosphere current systems has two extremes for drivers of ionospheric currents: ionospheric electric fields/voltages constant while current/conductivity vary—the "voltage generator"—and current constant while electric field/conductivity vary—the "current generator." Statistical studies of ground magnetometer observations associated with dayside Transient High Latitude Current Systems (THLCS) driven by similar mechanisms find contradictory results using this paradigm: some studies associate THLCS with voltage generators, others with current generators. We argue that most of this contradiction arises from two assumptions used to interpret ground magnetometer observations: (1) measurements made at fixed position relative to the THLCS field-aligned current and (2) negligible auroral precipitation contributions to ionospheric conductivity. We use observations and simulations to illustrate how these two assumptions substantially alter expectations for magnetic perturbations associated with either a current or a voltage generator. Our results demonstrate that before interpreting ground magnetometer observations of THLCS in the context of current/voltage generators, the location of a ground magnetometer station relative to the THLCS field-aligned current and the location of any auroral zone conductivity enhancements need to be taken into account.

A high-precision voltage source for EIT

PubMed Central

Saulnier, Gary J; Liu, Ning; Ross, Alexander S

2006-01-01

Electrical impedance tomography (EIT) utilizes electrodes placed on the surface of a body to determine the complex conductivity distribution within the body. EIT can be performed by applying currents through the electrodes and measuring the electrode voltages or by applying electrode voltages and measuring the currents. Techniques have also been developed for applying the desired currents using voltage sources. This paper describes a voltage source for use in applied-voltage EIT that includes the capability of measuring both the applied voltage and applied current. A calibration circuit and calibration algorithm are described which enables all voltage sources in an EIT system to be calibrated to a common standard. The calibration minimizes the impact of stray shunt impedance, passive component variability and active component non-ideality. Simulation data obtained using PSpice are used to demonstrate the effectiveness of the circuits and calibration algorithm. PMID:16636413

Non-contact current and voltage sensor

DOEpatents

Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

2014-03-25

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

Space plasma contactor research, 1987

NASA Technical Reports Server (NTRS)

Wilbur, Paul J.

1988-01-01

A simple model describing the process of electron collection from a low pressure ambient plasma in the absence of magnetic field and contactor velocity effects is presented. Experimental measurments of the plasma surrounding the contactor are used to demonstrate that a double-sheath generally develops and separates the ambient plasma from a higher density, anode plasma located adjacent to the contactor. Agreement between the predictions of the model and experimental measurements obtained at the electron collection current levels ranging to 1 A suggests the surface area at the ambient plasma boundary of the double-sheath is equal to the electron current being collected divided by the ambient plasma random electron current density; the surface area of the higher density anode plasma boundary of the double-sheath is equal to the ion current being emitted across this boundary divided by the ion current density required to sustain a stable sheath; and the voltage drop across the sheath is determined by the requirement that the ion and electron currents counterflowing across the boundaries be at space-charge limited levels. The efficiency of contactor operation is shown to improve when significant ionization and excitation is induced by electrons that stream from the ambient plasma through the double-sheath and collide with neutral atoms being supplied through the hollow cathode.

Dual side control for inductive power transfer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

An apparatus for dual side control includes a measurement module that measures a voltage and a current of an IPT system. The voltage includes an output voltage and/or an input voltage and the current includes an output current and/or an input current. The output voltage and the output current are measured at an output of the IPT system and the input voltage and the input current measured at an input of the IPT system. The apparatus includes a max efficiency module that determines a maximum efficiency for the IPT system. The max efficiency module uses parameters of the IPT systemmore » to iterate to a maximum efficiency. The apparatus includes an adjustment module that adjusts one or more parameters in the IPT system consistent with the maximum efficiency calculated by the max efficiency module.« less

Frequency Dependence of Low-Voltage Electrowetting Investigated by Impedance Spectroscopy.

PubMed

Li, Ying-Jia; Cahill, Brian P

2017-11-14

An electrowetting-on-dielectric (EWOD) electrode was developed that facilitates the use of low alternating voltages (≤5 V AC ). This allows online investigation of the frequency dependence of electrowetting by means of impedance spectroscopy. The EWOD electrode is based on a dielectric bilayer consisting of an anodic tantalum pentoxide (Ta 2 O 5 ) thin film (d = 59.35 nm) with a high relative permittivity (ε d = 26.3) and a self-assembled hydrophobic silane monolayer. The frequency dependence of electrowetting was studied using an aqueous μL-sized sessile droplet on the planar EWOD electrode in oil. Experiments using electrochemical impedance spectroscopy and optical imaging indicate the frequency dependence of all three variables in the Young-Lippmann equation: the voltage drop across the dielectric layers, capacitance per unit area, and contact angle under voltage. The electrowetting behavior induced by AC voltages is shown to be well described by the Young-Lippmann equation for AC applications below a frequency threshold. Moreover, the dielectric layers act as a capacitor and the stored electrostatic potential energy is revealed to only partially contribute to the electrowetting.

Transdermal transport pathway creation: Electroporation pulse order.

PubMed

Becker, Sid; Zorec, Barbara; Miklavčič, Damijan; Pavšelj, Nataša

2014-11-01

In this study we consider the physics underlying electroporation which is administered to skin in order to radically increase transdermal drug delivery. The method involves the application of intense electric fields to alter the structure of the impermeable outer layer, the stratum corneum. A generally held view in the field of skin electroporation is that the skin's drop in resistance (to transport) is proportional to the total power of the pulses (which may be inferred by the number of pulses administered). Contrary to this belief, experiments conducted in this study show that the application of high voltage pulses prior to the application of low voltage pulses result in lower transport than when low voltage pulses alone are applied (when less total pulse power is administered). In order to reconcile these unexpected experimental results, a computational model is used to conduct an analysis which shows that the high density distribution of very small aqueous pathways through the stratum corneum associated with high voltage pulses is detrimental to the evolution of larger pathways that are associated with low voltage pulses. Copyright © 2014 Elsevier Inc. All rights reserved.

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai

2013-05-13

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

NASA Astrophysics Data System (ADS)

Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

2017-06-01

The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

Educational Inductive Gravimeter

ERIC Educational Resources Information Center

Nunn, John

2014-01-01

A simple inductive gravimeter constructed from a rigid plastic pipe and insulated copper wire is described. When a magnet is dropped through the vertically mounted pipe it induces small alternating voltages. These small signals are fed to the microphone input of a typical computer and sampled at a typical rate of 44.1 kHz using a custom computer…

Ozone generation in a kHz-pulsed He-O2 capillary dielectric barrier discharge operated in ambient air

NASA Astrophysics Data System (ADS)

Sands, Brian L.; Ganguly, Biswa N.

2013-12-01

The generation of reactive oxygen species using nonequilibrium atmospheric pressure plasma jet devices has been a subject of recent interest due to their ability to generate localized concentrations from a compact source. To date, such studies with plasma jet devices have primarily utilized radio-frequency excitation. In this work, we characterize ozone generation in a kHz-pulsed capillary dielectric barrier discharge configuration comprised of an active discharge plasma jet operating in ambient air that is externally grounded. The plasma jet flow gas was composed of helium with an admixture of up to 5% oxygen. A unipolar voltage pulse train with a 20 ns pulse risetime was used to drive the discharge at repetition rates between 2-25 kHz. Using UVLED absorption spectroscopy centered at 255 nm near the Hartley-band absorption peak, ozone was detected over 1 cm from the capillary axis. We observed roughly linear scaling of ozone production with increasing pulse repetition rate up to a "turnover frequency," beyond which ozone production steadily dropped and discharge current and 777 nm O(5P→5S°) emission sharply increased. The turnover in ozone production occurred at higher pulse frequencies with increasing flow rate and decreasing applied voltage with a common energy density of 55 mJ/cm3 supplied to the discharge. The limiting energy density and peak ozone production both increased with increasing O2 admixture. The power dissipated in the discharge was obtained from circuit current and voltage measurements using a modified parallel plate dielectric barrier discharge circuit model and the volume-averaged ozone concentration was derived from a 2D ozone absorption measurement. From these measurements, the volume-averaged efficiency of ozone production was calculated to be 23 g/kWh at conditions for peak ozone production of 41 mg/h at 11 kV applied voltage, 3% O2, 2 l/min flow rate, and 13 kHz pulse repetition rate, with 1.79 W dissipated in the discharge.

RF current sensor

DOEpatents

Moore, James A.; Sparks, Dennis O.

1998-11-10

An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

Advanced electric propulsion and space plasma contactor research

NASA Technical Reports Server (NTRS)

Wilbur, Paul J.

1987-01-01

A theory of the plasma contacting process is described and experimental results obtained using three different hollow cathode-based plasma contactors are presented. The existence of a sheath across which the bulk of the voltage drop associated with the contacting process occurs is demonstrated. Test results are shown to agree with a model of a spherical, space-charge-limited double sheath. The concept of ignited mode contactor operation is discussed, which is shown to enhance contactor efficiency when it is collecting electrons. An investigation of the potentials in the plasma plumes downstream of contactors operating at typical conditions is presented. Results of tests performed on hollow cathodes operating at high interelectrode pressures (up to about 1000 Torr) on ammonia are presented and criteria that are necessary to ensure that the cathode will operate properly in this regime are presented. These results suggest that high pressure hollow cathode operation is difficult to achieve and that special care must be taken to assure that the electron emission region remains diffuse and attached to the low work function insert. Experiments conducted to verify results obtained previously using a ring cusp ion source equipped with a moveable anode are described and test results are reported. A theoretical study of hollow cathode operation at high electron emission currents is presented. Preliminary experiments using the constrained sheath optics concept to achieve ion extraction under conditions of high beam current density, low net accelerating voltage and well columniated beamlet formation are discussed.

Constant current loop impedance measuring system that is immune to the effects of parasitic impedances

NASA Technical Reports Server (NTRS)

Anderson, Karl F. (Inventor)

1994-01-01

A constant current loop measuring system is provided for measuring a characteristic of an environment. The system comprises a first impedance positionable in the environment, a second impedance coupled in series with said first impedance and a parasitic impedance electrically coupled to the first and second impedances. A current generating device, electrically coupled in series with the first and second impedances, provides a constant current through the first and second impedances to produce first and second voltages across the first and second impedances, respectively, and a parasitic voltage across the parasitic impedance. A high impedance voltage measuring device measures a voltage difference between the first and second voltages independent of the parasitic voltage to produce a characteristic voltage representative of the characteristic of the environment.

Electronic circuit for measuring series connected electrochemical cell voltages

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2000-01-01

An electronic circuit for measuring voltage signals in an energy storage device is disclosed. The electronic circuit includes a plurality of energy storage cells forming the energy storage device. A voltage divider circuit is connected to at least one of the energy storage cells. A current regulating circuit is provided for regulating the current through the voltage divider circuit. A voltage measurement node is associated with the voltage divider circuit for producing a voltage signal which is proportional to the voltage across the energy storage cell.

Transient sodium current at subthreshold voltages: activation by EPSP waveforms

PubMed Central

Carter, Brett C.; Giessel, Andrew J.; Sabatini, Bernardo L.; Bean, Bruce P.

2012-01-01

Summary Tetrodotoxin (TTX)-sensitive sodium channels carry large transient currents during action potentials and also “persistent” sodium current, a non-inactivating TTX-sensitive current present at subthreshold voltages. We examined gating of subthreshold sodium current in dissociated cerebellar Purkinje neurons and hippocampal CA1 neurons, studied at 37 °C with near-physiological ionic conditions. Unexpectedly, in both cell types small voltage steps at subthreshold voltages activated a substantial component of transient sodium current as well as persistent current. Subthreshold EPSP-like waveforms also activated a large component of transient sodium current, but IPSP-like waveforms engaged primarily persistent sodium current with only a small additional transient component. Activation of transient as well as persistent sodium current at subthreshold voltages produces amplification of EPSPs that is sensitive to the rate of depolarization and can help account for the dependence of spike threshold on depolarization rate, as previously observed in vivo. PMID:22998875

Capacitively coupled RF voltage probe having optimized flux linkage

DOEpatents

Moore, James A.; Sparks, Dennis O.

1999-02-02

An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

Experiences in extraction of contact parameters from process-evaluation test-structures

NASA Technical Reports Server (NTRS)

Lieneweg, Udo

1988-01-01

Six-terminal-contact test structures are introduced for characterizing ohmic contacts between a metal and a heavily doped semiconductor layer. Specifically, the six-terminal test structure supplies the additional information needed in order to calculate the transmission length and eventual corrections to the characteristic resistance per unit width due to finite contact length. The essential feature of this test structure is a square contact with four taps in the lower (semiconductor) layer. Every other one of these taps is used for current injection ('front'). From the voltage drop at the opposite tap and the side taps, the 'end' resistance and the 'side' resistances are calculated. The test structures are shown to give valuable information complementary to the common front resistance measurements. The interfacial resistivity is obtained directly after proper correction for flange effects.

Negative local resistance caused by viscous electron backflow in graphene.

PubMed

Bandurin, D A; Torre, I; Krishna Kumar, R; Ben Shalom, M; Tomadin, A; Principi, A; Auton, G H; Khestanova, E; Novoselov, K S; Grigorieva, I V; Ponomarenko, L A; Geim, A K; Polini, M

2016-03-04

Graphene hosts a unique electron system in which electron-phonon scattering is extremely weak but electron-electron collisions are sufficiently frequent to provide local equilibrium above the temperature of liquid nitrogen. Under these conditions, electrons can behave as a viscous liquid and exhibit hydrodynamic phenomena similar to classical liquids. Here we report strong evidence for this transport regime. We found that doped graphene exhibits an anomalous (negative) voltage drop near current-injection contacts, which is attributed to the formation of submicrometer-size whirlpools in the electron flow. The viscosity of graphene's electron liquid is found to be ~0.1 square meters per second, an order of magnitude higher than that of honey, in agreement with many-body theory. Our work demonstrates the possibility of studying electron hydrodynamics using high-quality graphene. Copyright © 2016, American Association for the Advancement of Science.

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

NASA Astrophysics Data System (ADS)

Kuwano, Yuka; Kaga, Mitsuru; Morita, Takatoshi; Yamashita, Kouji; Yagi, Kouta; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2013-08-01

We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface layers in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high temperature thermal annealing was effective for the lateral Mg activation when the p-GaN layers were partly exposed to an oxygen ambient as etched sidewalls. The activated regions gradually extended from the etched sidewalls to the centers with an increase of annealing time, observed as emission regions with current injection. These results suggest that hydrogen diffuses not vertically thorough the above n-GaN but laterally through the exposed portions of the p-GaN. The lowest voltage drop at the GaInN tunnel junction was estimated to be 0.9 V at 50 mA with the optimized annealing condition.

Device and Method for Continuously Equalizing the Charge State of Lithium Ion Battery Cells

NASA Technical Reports Server (NTRS)

Schwartz, Paul D. (Inventor); Roufberg, Lewis M. (Inventor); Martin, Mark N. (Inventor)

2015-01-01

A method of equalizing charge states of individual cells in a battery includes measuring a previous cell voltage for each cell, measuring a previous shunt current for each cell, calculating, based on the previous cell voltage and the previous shunt current, an adjusted cell voltage for each cell, determining a lowest adjusted cell voltage from among the calculated adjusted cell voltages, and calculating a new shunt current for each cell.

Battery charging and discharging research based on the interactive technology of smart grid and electric vehicle

NASA Astrophysics Data System (ADS)

Zhang, Mingyang

2018-06-01

To further study the bidirectional flow problem of V2G (Vehicle to Grid) charge and discharge motor, the mathematical model of AC/DC converter and bi-directional DC/DC converter was established. Then, lithium battery was chosen as the battery of electric vehicle and its mathematical model was established. In order to improve the service life of lithium battery, bidirectional DC/DC converter adopted constant current and constant voltage control strategy. In the initial stage of charging, constant current charging was adopted with current single closed loop control. After reaching a certain value, voltage was switched to constant voltage charging controlled by voltage and current. Subsequently, the V2G system simulation model was built in MATLAB/Simulink. The simulation results verified the correctness of the control strategy and showed that when charging, constant current and constant voltage charging was achieved, the grid side voltage and current were in the same phase, and the power factor was about 1. When discharging, the constant current discharge was applied, and the grid voltage and current phase difference was r. To sum up, the simulation results are correct and helpful.

Giga-seal formation alters properties of sodium channels of human myoballs.

PubMed

Fahlke, C; Rüdel, R

1992-03-01

The influence of giga-seal formation on the properties of the Na+ channels within the covered membrane patch was investigated with a whole-cell pipette and a patch pipette applied to the same cell. Current kinetics, current/voltage relation and channel densities were determined in three combinations: (i) voltage-clamping and current recording with the whole-cell pipette, (ii) voltage-clamping with the whole-cell pipette and current recording with the patch pipette and, (iii) voltage-clamping and current recording with the patch pipette. The Hodgkin-Huxley (1952) parameters tau m and tau h were smaller for the patch currents than for the whole cell, and the h infinity curve was shifted in the negative direction. The channel density was of the order of 10 times smaller. All effects were independent of the extracellular Ca2+ concentration. The capacitive current generated in the patch by the whole-cell Na+ current and its effect on the transmembrane voltage of the patch were evaluated. The kinetic parameters of the Na+ channels in the patch did not depend on whether the voltage was clamped with the whole-cell pipette or the patch pipette. Thus, the results are not due to spurious voltage.

Monte Carlo modeling and optimization of buffer gas positron traps

NASA Astrophysics Data System (ADS)

Marjanović, Srđan; Petrović, Zoran Lj

2017-02-01

Buffer gas positron traps have been used for over two decades as the prime source of slow positrons enabling a wide range of experiments. While their performance has been well understood through empirical studies, no theoretical attempt has been made to quantitatively describe their operation. In this paper we apply standard models as developed for physics of low temperature collision dominated plasmas, or physics of swarms to model basic performance and principles of operation of gas filled positron traps. The Monte Carlo model is equipped with the best available set of cross sections that were mostly derived experimentally by using the same type of traps that are being studied. Our model represents in realistic geometry and fields the development of the positron ensemble from the initial beam provided by the solid neon moderator through voltage drops between the stages of the trap and through different pressures of the buffer gas. The first two stages employ excitation of N2 with acceleration of the order of 10 eV so that the trap operates under conditions when excitation of the nitrogen reduces the energy of the initial beam to trap the positrons without giving them a chance to become annihilated following positronium formation. The energy distribution function develops from the assumed distribution leaving the moderator, it is accelerated by the voltage drops and forms beams at several distinct energies. In final stages the low energy loss collisions (vibrational excitation of CF4 and rotational excitation of N2) control the approach of the distribution function to a Maxwellian at room temperature but multiple non-Maxwellian groups persist throughout most of the thermalization. Optimization of the efficiency of the trap may be achieved by changing the pressure and voltage drops and also by selecting to operate in a two stage mode. The model allows quantitative comparisons and test of optimization as well as development of other properties.

Optoelectronic and all-optical multiple memory states in vanadium dioxide

NASA Astrophysics Data System (ADS)

Coy, Horacio; Cabrera, Rafmag; Sepúlveda, Nelson; Fernández, Félix E.

2010-12-01

Vanadium dioxide exhibits a well-known insulator-to-metal transition during which several of its physical properties change significantly. A hysteresis loop develops for each of them as the material is heated and then cooled through the transition. In this work VO2/SiO2 samples were maintained—by heat sinking—at a selected temperature within the heating branch of the hysteresis loops for resistance and near-infrared transmittance, while brief thermal excursions of the VO2 film were caused by either voltage pulses applied to the film or laser light pulses irradiating the film. These pulses had durations from milliseconds to a few seconds and the resulting drops in resistance or transmittance were easily and repeatably measurable without appreciably affecting their new values. A sequence of equal-duration pulses (for either equal-voltage or equal-irradiation pulses) caused the resistance and infrared transmittance to continue to drop, each time by a smaller amount, and larger energy pulses were required in order to cause drops comparable with the initial one. The ability of the film to change the values of the measurands in this manner with additional pulses was maintained up to a limit defined by the outer hysteresis curve for the measurand in question. The results presented show that a plurality of memory "states" in VO2 can be established or "written" either by voltage pulses or by light pulses applied to the material, and queried or "read" by resistance or transmittance readings, or both. These states were found to remain stable for at least several hours, as long as temperature was kept constant, and are expected to persist indefinitely under this condition. In the all-optical case, if the same light beam is used for writing and reading the memory state, the device is an optical analog of a memristor.

Single-Cell Electric Lysis on an Electroosmotic-Driven Microfluidic Chip with Arrays of Microwells

PubMed Central

Jen, Chun-Ping; Amstislavskaya, Tamara G.; Liu, Ya-Hui; Hsiao, Ju-Hsiu; Chen, Yu-Hung

2012-01-01

Accurate analysis at the single-cell level has become a highly attractive tool for investigating cellular content. An electroosmotic-driven microfluidic chip with arrays of 30-μm-diameter microwells was developed for single-cell electric lysis in the present study. The cellular occupancy in the microwells when the applied voltage was 5 V (82.4%) was slightly higher than that at an applied voltage of 10 V (81.8%). When the applied voltage was increased to 15 V, the cellular occupancy in the microwells dropped to 64.3%. More than 50% of the occupied microwells contain individual cells. The results of electric lysis experiments at the single-cell level indicate that the cells were gradually lysed as the DC voltage of 30 V was applied; the cell was fully lysed after 25 s. Single-cell electric lysis was demonstrated in the proposed microfluidic chip, which is suitable for high-throughput cell lysis. PMID:22969331

Surge Protection in Low-Voltage AC Power Circuits: An Anthology

NASA Astrophysics Data System (ADS)

Martzloff, F. D.

2002-10-01

The papers included in this part of the Anthology provide basic information on the propagation of surges in low-voltage AC power circuits. The subject was approached by a combination of experiments and theoretical considerations. One important distinction is made between voltage surges and current surges. Historically, voltage surges were the initial concern. After the introduction and widespread use of current-diverting surge-protective devices at the point-of-use, the propagation of current surges became a significant factor. The papers included in this part reflect this dual dichotomy of voltage versus current and impedance mismatch effects versus simple circuit theory.

Activation of Ih and TTX-sensitive sodium current at subthreshold voltages during CA1 pyramidal neuron firing

PubMed Central

Yamada-Hanff, Jason

2015-01-01

We used dynamic clamp and action potential clamp techniques to explore how currents carried by tetrodotoxin-sensitive sodium channels and HCN channels (Ih) regulate the behavior of CA1 pyramidal neurons at resting and subthreshold voltages. Recording from rat CA1 pyramidal neurons in hippocampal slices, we found that the apparent input resistance and membrane time constant were strongly affected by both conductances, with Ih acting to decrease apparent input resistance and time constant and sodium current acting to increase both. We found that both Ih and sodium current were active during subthreshold summation of artificial excitatory postsynaptic potentials (EPSPs) generated by dynamic clamp, with Ih dominating at less depolarized voltages and sodium current at more depolarized voltages. Subthreshold sodium current—which amplifies EPSPs—was most effectively recruited by rapid voltage changes, while Ih—which blunts EPSPs—was maximal for slow voltage changes. The combined effect is to selectively amplify rapid EPSPs. We did similar experiments in mouse CA1 pyramidal neurons, doing voltage-clamp experiments using experimental records of action potential firing of CA1 neurons previously recorded in awake, behaving animals as command voltages to quantify flow of Ih and sodium current at subthreshold voltages. Subthreshold sodium current was larger and subthreshold Ih was smaller in mouse neurons than in rat neurons. Overall, the results show opposing effects of subthreshold sodium current and Ih in regulating subthreshold behavior of CA1 neurons, with subthreshold sodium current prominent in both rat and mouse CA1 pyramidal neurons and additional regulation by Ih in rat neurons. PMID:26289465

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2011 CFR

2011-07-01

...-phase alternating current equipment; circuit breakers. 75.900 Section 75.900 Mineral Resources MINE... Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers. [Statutory Provisions] Low- and medium-voltage power circuits serving three-phase alternating current...

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

NASA Technical Reports Server (NTRS)

Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

1993-01-01

A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto

2016-04-26

A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, ormore » alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.« less

Voltage-clamp study of the activation currents and fast block to polyspermy in the egg of Xenopus laevis.

PubMed

Glahn, David; Nuccitelli, Richard

2003-04-01

Voltage-clamped mature, jelly-intact Xenopus eggs were used to carefully examine the ionic currents crossing the plasma membrane before, during, and after fertilization. The bulk of the fertilization current was transient, of large amplitude, and reversed at the predicted Cl- reversal potential. However, the large amplitude fertilization current was preceded by a small, step-like increase in holding current. This small increase in holding current is referred to in this paper as Ion to acknowledge its qualitative similarity to the Ion current previously described in the sea urchin. It was observed in both fertilized and artificially activated eggs, and was found to be unaffected by 10 mm tetra-ethyl ammonium (TEA), a concentration found to block K+ currents in Rana pipiens. Current-voltage relationships are presented for the large fertilization potential, and show that the fertilization currents have a marked outward rectification and are voltage sensitive. These properties are in contrast to the total lack of rectification and slight voltage sensitivity seen before or after the fertilization currents. The time required for sperm to fertilize the egg was found to be voltage dependent with a relatively more depolarized voltage requiring a longer time for fertilization to occur. The percentage of eggs blocked with varying potential levels was determined and this information was fitted to a modified Boltzmann equation having a midpoint of -9 mV.

Systems and methods for providing power to a load based upon a control strategy

DOEpatents

Perisic, Milun; Kajouke, Lateef A; Ransom, Ray M

2013-12-24

Systems and methods are provided for an electrical system. The electrical system includes a load, an interface configured to receive a voltage from a voltage source, and a controller configured to receive the voltage from the voltage source through the interface and to provide a voltage and current to the load. Wherein, when the controller is in a constant voltage mode, the controller provides a constant voltage to the load, when the controller is in a constant current mode, the controller provides a constant current to the load, and when the controller is in a constant power mode, the controller provides a constant power to the load.

Nanoscale reduction of graphene oxide thin films and its characterization

NASA Astrophysics Data System (ADS)

Lorenzoni, M.; Giugni, A.; Di Fabrizio, E.; Pérez-Murano, Francesc; Mescola, A.; Torre, B.

2015-07-01

In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

Vortex depinning as a nonequilibrium phase transition phenomenon: Scaling of current-voltage curves near the low and the high critical-current states in 2 H -Nb S2 single crystals

NASA Astrophysics Data System (ADS)

Bag, Biplab; Sivananda, Dibya J.; Mandal, Pabitra; Banerjee, S. S.; Sood, A. K.; Grover, A. K.

2018-04-01

The vortex depinning phenomenon in single crystals of 2 H -Nb S2 superconductors is used as a prototype for investigating properties of the nonequilibrium (NEQ) depinning phase transition. The 2 H -Nb S2 is a unique system as it exhibits two distinct depinning thresholds, viz., a lower critical current Icl and a higher one Ich. While Icl is related to depinning of a conventional, static (pinned) vortex state, the state with Ich is achieved via a negative differential resistance (NDR) transition where the velocity abruptly drops. Using a generalized finite-temperature scaling ansatz, we study the scaling of current (I)-voltage (V) curves measured across Icl and Ich. Our analysis shows that for I >Icl , the moving vortex state exhibits Arrhenius-like thermally activated flow behavior. This feature persists up to a current value where an inflexion in the IV curves is encountered. While past measurements have often reported similar inflexion, our analysis shows that the inflexion is a signature of a NEQ phase transformation from a thermally activated moving vortex phase to a free flowing phase. Beyond this inflection in IV, a large vortex velocity flow regime is encountered in the 2 H -Nb S2 system, wherein the Bardeen-Stephen flux flow limit is crossed. In this regime the NDR transition is encountered, leading to the high Ich state. The IV curves above Ich we show do not obey the generalized finite-temperature scaling ansatz (as obeyed near Icl). Instead, they scale according to the Fisher's scaling form [Fisher, Phys. Rev. B 31, 1396 (1985), 10.1103/PhysRevB.31.1396] where we show thermal fluctuations do not affect the vortex flow, unlike that found for depinning near Icl.

Hydrogen production by geobacter species and a mixed consortium in a microbial electrolysis cell.

PubMed

Call, Douglas F; Wagner, Rachel C; Logan, Bruce E

2009-12-01

A hydrogen utilizing exoelectrogenic bacterium (Geobacter sulfurreducens) was compared to both a nonhydrogen oxidizer (Geobacter metallireducens) and a mixed consortium in order to compare the hydrogen production rates and hydrogen recoveries of pure and mixed cultures in microbial electrolysis cells (MECs). At an applied voltage of 0.7 V, both G. sulfurreducens and the mixed culture generated similar current densities (ca. 160 A/m3), resulting in hydrogen production rates of ca. 1.9 m(3) H2/m3/day, whereas G. metallireducens exhibited lower current densities and production rates of 110 +/- 7 A/m3 and 1.3 +/- 0.1 m3 H2/m3/day, respectively. Before methane was detected in the mixed-culture MEC, the mixed consortium achieved the highest overall energy recovery (relative to both electricity and substrate energy inputs) of 82% +/- 8% compared to G. sulfurreducens (77% +/- 2%) and G. metallireducens (78% +/- 5%), due to the higher coulombic efficiency of the mixed consortium. At an applied voltage of 0.4 V, methane production increased in the mixed-culture MEC and, as a result, the hydrogen recovery decreased and the overall energy recovery dropped to 38% +/- 16% compared to 80% +/- 5% for G. sulfurreducens and 76% +/- 0% for G. metallireducens. Internal hydrogen recycling was confirmed since the mixed culture generated a stable current density of 31 +/- 0 A/m3 when fed hydrogen gas, whereas G. sulfurreducens exhibited a steady decrease in current production. Community analysis suggested that G. sulfurreducens was predominant in the mixed-culture MEC (72% of clones) despite its relative absence in the mixed-culture inoculum obtained from a microbial fuel cell reactor (2% of clones). These results demonstrate that Geobacter species are capable of obtaining similar hydrogen production rates and energy recoveries as mixed cultures in an MEC and that high coulombic efficiencies in mixed culture MECs can be attributed in part to the recycling of hydrogen into current.

Vacuum arcing behavior between transverse magnetic field contacts subjected to variable axial magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Hui; Wang, Jianhua; Liu, Zhiyuan, E-mail: liuzy@mail.xjtu.edu.cn

2016-06-15

The objective of this work is to reveal the effects of an axial magnetic field (AMF) on the vacuum arc characteristics between transverse magnetic field (TMF) contacts. These vacuum arc characteristics include the vacuum arcing behavior and the arc voltage waveform. In the experiments, an external AMF was applied to a pair of TMF contacts. The external AMF flux density B{sub AMF} can be adjusted from 0 to 110 mT. The arc current in the tests varied over a range from 0 to 20 kA rms at 45 Hz. The contact material was CuCr25 (25% Cr). A high-speed charge-coupled device video camera wasmore » used to record the vacuum arc evolution. The experimental results show that the application of the AMF effectively reduces the TMF arc voltage noise component and reduces the formation of liquid metal drops between the contacts. The diffuse arc duration increases linearly with increasing AMF flux density, but it also decreases linearly with increasing arc current under application of the external AMF. The results also indicate that the diffuse arc duration before the current zero is usually more than 1 ms under the condition that the value of the AMF per kiloampere is more than 2.0 mT/kA. Finally, under application of the AMF, the arc column of the TMF contacts may constrict and remain in the center region without transverse rotation. Therefore, the combined TMF–AMF contacts should be designed such that they guarantee that the AMF is not so strong as to oppose transverse rotation of the arc column.« less

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Addressing On-Chip Power Converstion and Dissipation Issues in Many-Core System-on-a-Chip Based on Conventional Silicon and Emerging Nanotechnologies

NASA Astrophysics Data System (ADS)

Ashenafi, Emeshaw

Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse-with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on-ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.

Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films.

PubMed

Röhr, Jason A; Moia, Davide; Haque, Saif A; Kirchartz, Thomas; Nelson, Jenny

2018-03-14

Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films

NASA Astrophysics Data System (ADS)

Röhr, Jason A.; Moia, Davide; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

2018-03-01

Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

NASA Astrophysics Data System (ADS)

Chattopadhyay, P.

1994-10-01

The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reed, David; Thomsen, Edwin; Li, Bin

Three flow designs were operated in a 3-cell 1 kW class all vanadium mixed acid redox flow battery. The influence of electrode surface area and flow rate on the coulombic, voltage, and energy efficiency and the pressure drop in the flow circuit will be discussed and correlated to the flow design. Material cost associated with each flow design will also be discussed.

Inductance parameter design based seamless transfer strategy for three-phase converter in microgrid

NASA Astrophysics Data System (ADS)

Zhao, Guopeng; Zhou, Xinwei; Jiang, Chao; Lu, Yi; Wang, Yanjie

2018-06-01

During the operation of microgrid, especially when the unplanned islanding occurs, the voltage of the point of common coupling (PCC) needs to be maintained within a certain range, otherwise it would affect the operation of loads in microgrid. This paper proposes a seamless transfer strategy based on the inductance parameter design for three-phase converter in microgrid, which considers both the fundamental component of voltage on the inductance and the ripple current in the inductance. In grid-connected mode, the PCC voltage is supported by the grid. When the unplanned islanding occurs, the PCC voltage is affected by the output voltage of converter and the voltage on the inductance. According to the single phase equivalent circuit, analyzing the phasor diagram of voltage and current vector, considering the prescribed range of PCC voltage and satisfying the requirement of the magnitude of ripple current, the inductance parameter is designed. At last, the simulation result shows that the designed inductance can ensure the PCC voltage does not exceed the prescribed range and restrain the ripple current.

Fuel cell stack monitoring and system control

DOEpatents

Keskula, Donald H.; Doan, Tien M.; Clingerman, Bruce J.

2004-02-17

A control method for monitoring a fuel cell stack in a fuel cell system in which the actual voltage and actual current from the fuel cell stack are monitored. A preestablished relationship between voltage and current over the operating range of the fuel cell is established. A variance value between the actual measured voltage and the expected voltage magnitude for a given actual measured current is calculated and compared with a predetermined allowable variance. An output is generated if the calculated variance value exceeds the predetermined variance. The predetermined voltage-current for the fuel cell is symbolized as a polarization curve at given operating conditions of the fuel cell.

A programmable and portable NMES device for drop foot correction and blood flow assist applications.

PubMed

Breen, Paul P; Corley, Gavin J; O'Keeffe, Derek T; Conway, Richard; Olaighin, Gearóid

2009-04-01

The Duo-STIM, a new, programmable and portable neuromuscular stimulation system for drop foot correction and blood flow assist applications is presented. The system consists of a programmer unit and a portable, programmable stimulator unit. The portable stimulator features fully programmable, sensor-controlled, constant-voltage, dual-channel stimulation and accommodates a range of customized stimulation profiles. Trapezoidal and free-form adaptive stimulation intensity envelope algorithms are provided for drop foot correction applications, while time dependent and activity dependent algorithms are provided for blood flow assist applications. A variety of sensor types can be used with the portable unit, including force sensitive resistor-based foot switches and MEMS-based accelerometer and gyroscope devices. The paper provides a detailed description of the hardware and block-level system design for both units. The programming and operating procedures for the system are also presented. Finally, functional bench test results for the system are presented.

A programmable and portable NMES device for drop foot correction and blood flow assist applications.

PubMed

Breen, Paul P; Corley, Gavin J; O'Keeffe, Derek T; Conway, Richard; OLaighin, Gearoid

2007-01-01

The Duo-STIM, a new, programmable and portable neuromuscular stimulation system for drop foot correction and blood flow assist applications is presented. The system consists of a programmer unit and a portable, programmable stimulator unit. The portable stimulator features fully programmable, sensor-controlled, constant-voltage, dual-channel stimulation and accommodates a range of customized stimulation profiles. Trapezoidal and free-form adaptive stimulation intensity envelope algorithms are provided for drop foot correction applications, while time dependent and activity dependent algorithms are provided for blood flow assist applications. A variety of sensor types can be used with the portable unit, including force sensitive resistor based foot switches and NMES based accelerometer and gyroscope devices. The paper provides a detailed description of the hardware and block-level system design for both units. The programming and operating procedures for the system are also presented. Finally, functional bench test results for the system are presented.

Factors influencing the removal of antibiotic-resistant bacteria and antibiotic resistance genes by the electrokinetic treatment.

PubMed

Li, Hongna; Li, Binxu; Zhang, Zhiguo; Tian, Yunlong; Ye, Jing; Lv, Xiwu; Zhu, Changxiong

2018-09-30

The performance of the electrokinetic remediation process on the removal of antibiotic-resistant bacteria (ARB) and antibiotic resistance genes (ARGs) was evaluated with different influencing factors. With chlortetracycline (CTC), oxytetracycline (OTC), and tetracycline (TC) as template chemicals, the removal of both ARB and ARGs was enhanced with the increase of voltage gradient (0.4-1.2 V cm -1 ) and prolonged reaction time (3-14 d). The greatest removal (26.01-31.48% for ARB, 37.93-83.10% for ARGs) was obtained applying a voltage of 1.2 V cm -1 , leading to the highest electrical consumption. The effect of polarity reversal intervals on the inactivation ratio of ARB followed the order of 0 h (66.06-80.00%) > 12 h (17.07-24.75%) > 24 h (10.44-13.93%). Lower pH, higher current density, and more evenly-distributed voltage drop was observed with a polarity reversal interval of 12 h compared with that of 24 h, leading to more efficient electrochemical reactions in soil. Compared with sul genes, tet genes were more vulnerable to be attacked in an electric field. It was mainly attributed to the lower abundance of tet genes (except tetM) and the varied effects of electrokinetic remediation process on different ARGs. Moreover, a relatively less removal ratio of tetC and tetG was obtained mainly due to the mechanism of the efflux pump upregulation. Both tet and sul genes were positively correlated with TC-resistant bacteria. The efflux pump genes like tetG and the cellular protection genes like tetM showed different correlations with ARB. This study enhances the current understanding on the removal strategies of ARB and ARGs, and it provides important parameters for their destruction by the electrokinetic treatment. Copyright © 2018 Elsevier Inc. All rights reserved.

Power dissipation in the mixed metal-insulator state of self-heated VO2 single crystals and the effect of sliding domains

NASA Astrophysics Data System (ADS)

Fisher, B.; Patlagan, L.

2018-06-01

The mixed metal-insulator state in VO2 sets on within the current-controlled negative differential resistivity regime of I-V loops traced at ambient temperature. In this state, the stability of I(V) and/or spontaneous switching between initial and final steady states are governed by the load resistance RL in series with the sample. With increasing current (decreasing voltage), the power P = IV reaches a maximum (Pmax) and drops to a minimum (Pmin) along a path that depends on RL. For low enough RL, the ratio Pmax/Pmin may exceed by far the contrast in thermal emissivity from films of VO2 over the metal-insulator transition as reported in Kats et al. [Phys. Rev. X 3, 041004 (2013)]. The minimum is followed by a range of currents where the power increases with current. The return path overlaps the original path and continues towards backward switching. For a few samples, there is evidence from optical microscopy that the portion of the P(I) loop between Pmin and backward switching coincides with the range of currents where semiconducting domains slide within a metallic background. Damage induced in crystals by repeated I-V cycling suppresses domain sliding and flattens P(I) in the respective range of currents. This is consistent with the current dependent excess power dissipation being induced by the sliding domains.

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1996-10-15

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1996-01-01

A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto

2016-04-26

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylindermore » when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.« less

Conformational changes in the M2 muscarinic receptor induced by membrane voltage and agonist binding

PubMed Central

Navarro-Polanco, Ricardo A; Galindo, Eloy G Moreno; Ferrer-Villada, Tania; Arias, Marcelo; Rigby, J Ryan; Sánchez-Chapula, José A; Tristani-Firouzi, Martin

2011-01-01

Abstract The ability to sense transmembrane voltage is a central feature of many membrane proteins, most notably voltage-gated ion channels. Gating current measurements provide valuable information on protein conformational changes induced by voltage. The recent observation that muscarinic G-protein-coupled receptors (GPCRs) generate gating currents confirms their intrinsic capacity to sense the membrane electrical field. Here, we studied the effect of voltage on agonist activation of M2 muscarinic receptors (M2R) in atrial myocytes and how agonist binding alters M2R gating currents. Membrane depolarization decreased the potency of acetylcholine (ACh), but increased the potency and efficacy of pilocarpine (Pilo), as measured by ACh-activated K+ current, IKACh. Voltage-induced conformational changes in M2R were modified in a ligand-selective manner: ACh reduced gating charge displacement while Pilo increased the amount of charge displaced. Thus, these ligands manifest opposite voltage-dependent IKACh modulation and exert opposite effects on M2R gating charge displacement. Finally, mutations in the putative ligand binding site perturbed the movement of the M2R voltage sensor. Our data suggest that changes in voltage induce conformational changes in the ligand binding site that alter the agonist–receptor interaction in a ligand-dependent manner. Voltage-dependent GPCR modulation has important implications for cellular signalling in excitable tissues. Gating current measurement allows for the tracking of subtle conformational changes in the receptor that accompany agonist binding and changes in membrane voltage. PMID:21282291

Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

DOEpatents

Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

2011-03-22

A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

Mechanism of Small Current Generation under Impulse Voltage Applications in Vacuum

NASA Astrophysics Data System (ADS)

Aoki, Keita; Yasukawa, Hideaki; Kojima, Hiroki; Homma, Mitsutaka; Shioiri, Tetsu; Okubo, Hitoshi

Small discharge not to accompany breakdown can occur under high electric field in vacuum, however the mechanism is not well clarified. We have found that the current of small discharge decreases with repeated voltage applications, and leads to electrode conditioning effect of raising withstand voltage. The inception of the current is delayed with the decrease of current, and the inception time and waveform change by gap length. On the other hand, under low vacuum condition, the current increases and reaches saturation with repeated voltage applications. From these discussions, we concluded that the generating process of small current depended on the adsorption and absorption gas of electrodes.

Current-voltage characteristics of dc corona discharges in air between coaxial cylinders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Yuesheng, E-mail: yueshengzheng@fzu.edu.cn; Zhang, Bo, E-mail: shizbcn@tsinghua.edu.cn; He, Jinliang, E-mail: hejl@tsinghua.edu.cn

This paper presents the experimental measurement and numerical analysis of the current-voltage characteristics of dc corona discharges in air between coaxial cylinders. The current-voltage characteristics for both positive and negative corona discharges were measured within a specially designed corona cage. Then the measured results were fitted by different empirical formulae and analyzed by the fluid model. The current-voltage characteristics between coaxial cylinders can be expressed as I = C(U − U{sub 0}){sup m}, where m is within the range 1.5–2.0, which is similar to the point-plane electrode system. The ionization region has no significant effect on the current-voltage characteristic under a low corona current,more » while it will affect the distribution for the negative corona under a high corona current. The surface onset fields and ion mobilities were emphatically discussed.« less

How voltage drops are manifested by lithium ion configurations at interfaces and in thin films on battery electrodes

DOE PAGES

Leung, Kevin; Leenheer, Andrew Jay

2015-04-09

Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li + can move at the electrode–surface film interface in response to the voltage, which adds complexity to the “electric double layer” (EDL). We also apply Density Functional Theory (DFT) to investigate how the applied voltage is manifested as changes in the EDL at atomic length scales, including charge separation and interfacial dipole moments. Illustrating examples include Li 3PO 4, Li 2CO 3, and Li xMn 2O 4 thin films on Au(111) surfaces under ultrahigh vacuum conditions. Adsorbed organic solvent molecules canmore » strongly reduce voltages predicted in vacuum. We propose that manipulating surface dipoles, seldom discussed in battery studies, may be a viable strategy to improve electrode passivation. We also distinguish the computed potential governing electrons, which is the actual or instantaneous voltage, and the “lithium cohesive energy”-based voltage governing Li content widely reported in DFT calculations, which is a slower-responding self-consistency criterion at interfaces. Furthermore, this distinction is critical for a comprehensive description of electrochemical activities on electrode surfaces, including Li + insertion dynamics, parasitic electrolyte decomposition, and electrodeposition at overpotentials.« less

InP shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Keavney, Christopher; Spitzer, Mark B.; Vernon, Stanley M.; Haven, Victor E.; Augustine, Godfrey

1989-01-01

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

A theoretical analysis of steady-state photocurrents in simple silicon diodes

NASA Technical Reports Server (NTRS)

Edmonds, L.

1995-01-01

A theoretical analysis solves for the steady-state photocurrents produced by a given photo-generation rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called 'substrate' below) adjacent to a p-n junction depletion region (DR). Special attention is given to conditions that produce 'funneling' (a term used by the single-eventeffects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage, plus built-in potential normally across the DR, is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. First, it was found that funneling can be induced from a distance, i.e., from carriers generated at locations outside of the DR. Secondly, it was found that the substrate can divide into two subregions, with one controlling substrate resistance and the other characterized by ambipolar diffusion. Finally, funneling was found to be more difficult to induce in the p(sup +)/n diode than in the n(sup +)/p diode. The carrier density exceeding the doping density in the substrate and at the DR boundary is not a sufficient condition to collapse a DR.

The relationship between Q gamma and Ca release from the sarcoplasmic reticulum in skeletal muscle

PubMed Central

1991-01-01

Asymmetric membrane currents and fluxes of Ca2+ release were determined in skeletal muscle fibers voltage clamped in a Vaseline-gap chamber. The conditioning pulse protocol 1 for suppressing Ca2+ release and the "hump" component of charge movement current (I gamma), described in the first paper of this series, was applied at different test pulse voltages. The amplitude of the current suppressed during the ON transient reached a maximum at slightly suprathreshold test voltages (- 50 to -40 mV) and decayed at higher voltages. The component of charge movement current suppressed by 20 microM tetracaine also went through a maximum at low pulse voltages. This anomalous voltage dependence is thus a property of I gamma, defined by either the conditioning protocol or the tetracaine effect. A negative (inward-going) phase was often observed in the asymmetric current during the ON of depolarizing pulses. This inward phase was shown to be an intramembranous charge movement based on (a) its presence in the records of total membrane current, (b) its voltage dependence, with a maximum at slightly suprathreshold voltages, (c) its association with a "hump" in the asymmetric current, (d) its inhibition by interventions that reduce the "hump", (e) equality of ON and OFF areas in the records of asymmetric current presenting this inward phase, and (f) its kinetic relationship with the time derivative of Ca release flux. The nonmonotonic voltage dependence of the amplitude of the hump and the possibility of an inward phase of intramembranous charge movement are used as the main criteria in the quantitative testing of a specific model. According to this model, released Ca2+ binds to negatively charged sites on the myoplasmic face of the voltage sensor and increases the local transmembrane potential, thus driving additional charge movement (the hump). This model successfully predicts the anomalous voltage dependence and all the kinetic properties of I gamma described in the previous papers. It also accounts for the inward phase in total asymmetric current and in the current suppressed by protocol 1. According to this model, I gamma accompanies activating transitions at the same set of voltage sensors as I beta. Therefore it should open additional release channels, which in turn should cause more I gamma, providing a positive feedback mechanism in the regulation of calcium release. PMID:1650812

M-currents and other potassium currents in bullfrog sympathetic neurones

PubMed Central

Adams, P. R.; Brown, D. A.; Constanti, A.

1982-01-01

1. Bullfrog lumbar sympathetic neurones were voltage-clamped in vitro through twin micro-electrodes. Four different outward (K+) currents could be identified: (i) a large sustained voltage-sensitive delayed rectifier current (IK) activated at membrane potentials more positive than -25 mV; (ii) a calcium-dependent sustained outward current (IC) activated at similar positive potentials and peaking at +20 to +60 mV; (iii) a transient current (IA) activated at membrane potentials more positive than -60 mV after a hyperpolarizing pre-pulse, but which was rapidly and totally inactivated at all potentials within its activation range; and (iv) a new K+ current, the M-current (IM). 2. IM was detected as a non-inactivating current with a threshold at -60 mV. The underlying conductance GM showed a sigmoidal activation curve between -60 and -10 mV, with half-activation at -35 mV and a maximal value (ḠM) of 84±14 (S.E.M.) nS per neurone. The voltage sensitivity of GM could be expressed in terms of a simple Boltzmann distribution for a single multivalent gating particle. 3. IM activated and de-activated along an exponential time course with a time constant uniquely dependent upon voltage, maximizing at ≃ 150 ms at -35 mV at 22 °C. 4. Instantaneous current—voltage (I/V) curves were approximately linear in the presence of IM, suggesting that the M-channels do not show appreciable rectification. However, the time- and voltage-dependent opening of the M-channels induced considerable rectification in the steady-state I/V curves recorded under both voltage-clamp and current-clamp modes between -60 and -25 mV. Both time- and voltage-dependent rectification in the voltage responses to current injection over this range could be predicted from the kinetic properties of IM. 5. It is suggested that IM exerts a strong potential-clamping effect on the behaviour of these neurones at membrane potentials subthreshold to excitation. PMID:6294290

Inrush Current Suppression Circuit and Method for Controlling When a Load May Be Fully Energized

NASA Technical Reports Server (NTRS)

Schwerman, Paul (Inventor)

2017-01-01

A circuit and method for controlling when a load may be fully energized includes directing electrical current through a current limiting resistor that has a first terminal connected to a source terminal of a field effect transistor (FET), and a second terminal connected to a drain terminal of the FET. The gate voltage magnitude on a gate terminal of the FET is varied, whereby current flow through the FET is increased while current flow through the current limiting resistor is simultaneously decreased. A determination is made as to when the gate voltage magnitude on the gate terminal is equal to or exceeds a predetermined reference voltage magnitude, and the load is enabled to be fully energized when the gate voltage magnitude is equal to or exceeds the predetermined reference voltage magnitude.

An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litzenberger, Wayne; Lava, Val

1994-08-01

References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

Study of high-power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy

NASA Astrophysics Data System (ADS)

Ankudinov, A.; Titkov, A. N.; Evtikhiev, Vadim P.; Kotelnikov, Eugeny Y.; Bazhenov, N.; Zegrya, Georgy G.; Huhtinen, H.; Laiho, R.

2003-06-01

One of the important factors that restricts the power limit of semiconductor lasers is a catastrophic optical mirror damage. This process is significantly suppressed through decreasing the optical power density due to its redistribution over the broad transverse waveguide (BW). Recently it was shown that record-breaking values of the quasicontinuous and continuous-wave (QWC and CW) output power for 100-μm-wide-aperture devices can be achieved by incorporating a broad transverse waveguide into 0.97 μm emitting Al-free InGaAs(P)/InGaP/GaAs and Al-containing InGaAs/AlGaAs/GaAs separate confinement heterostructure quantum-well lasers (SCH-QWL). Another important factor limiting the CW output power is the Joule overheating of a laser diode due to an extra serial resistance. Traditionally, a decrease in the resistance is achieved by development of the contacts, whereas a voltage distribution across the device structure is not analyzed properly. At high operating currents the applied voltage can drop not only across the n-p-junction, but also at certain additional regions of the laser structure depending on a particular design of the device. Electrostatic force microscopy (EFM) provides a very promising method to study the voltage distribution across an operating device with a nanometer space resolution. An application of EFM for diagnostics of III-V laser diodes without and under applied biases have been recently demonstrated. However, the most interesting range of the biases, the lazing regime, has not been studied yet.

Monolithic quasi-sliding-mode controller for SIDO buck converter with a self-adaptive free-wheeling current level

NASA Astrophysics Data System (ADS)

Xiaobo, Wu; Qing, Liu; Menglian, Zhao; Mingyang, Chen

2013-01-01

An analog implementation of a novel fixed-frequency quasi-sliding-mode controller for single-inductor dual-output (SIDO) buck converter in pseudo-continuous conduction mode (PCCM) with a self-adaptive freewheeling current level (SFCL) is presented. Both small and large signal variations around the operation point are considered to achieve better transient response so as to reduce the cross-regulation of this SIDO buck converter. Moreover, an internal integral loop is added to suppress the steady-state regulation error introduced by conventional PWM-based sliding mode controllers. Instead of keeping it as a constant value, the free-wheeling current level varies according to the load condition to maintain high power efficiency and less cross-regulation at the same time. To verify the feasibility of the proposed controller, an SIDO buck converter with two regulated output voltages, 1.8 V and 3.3 V, is designed and fabricated in HEJIAN 0.35 μm CMOS process. Simulation and experiment results show that the transient time of this SIDO buck converter drops to 10 μs while the cross-regulation is reduced to 0.057 mV/mA, when its first load changes from 50 to 100 mA.

A comparison study of exploding a Cu wire in air, water, and solid powders

NASA Astrophysics Data System (ADS)

Han, Ruoyu; Wu, Jiawei; Ding, Weidong; Zhou, Haibin; Qiu, Aici; Wang, Yanan

2017-11-01

In this paper, an experimental study on exploding a copper wire in air, water, incombustible powders, and energetic materials is performed. We examined the effects of the surrounding media on the explosion process and its related phenomena. Experiments were first carried out with copper wire explosions driven by microsecond timescale pulsed currents in air, water, and the half-half case. Then, the copper wires were exploded in air, water, SiO2 powders, quartz sand, NaCl powders, and energetic-material cylinders, respectively. Our experimental results indicated that the explosion process was significantly influenced by the surrounding media, resulting in noticeable differences in energy deposition, optical emission, and shock waves. In particular, incombustible powders could throttle the current flow completely when a fine wire was adopted. We also found that an air or incombustible-powder layer could drastically attenuate the shock wave generated by a wire explosion. As for energetic-material loads, obvious discrepancies were found in voltage/current waveforms from vaporization when compared with a wire explosion in air/water, which meant the metal vapor/liquid drops play a significant role in the ignition process.

The Rated Voltage Determination of DC Building Power Supply System Considering Human Beings Safety

NASA Astrophysics Data System (ADS)

Wang, Zhicheng; Yu, Kansheng; Xie, Guoqiang; Zou, Jin

2018-01-01

Generally two-level voltages are adopted for DC building power supply system. From the point of view of human beings safety, only the lower level voltage which may be contacted barehanded is discussed in this paper based on the related safety thresholds of human beings current effect. For several voltage levels below 100V recommended by IEC, the body current and current density of human electric shock under device normal work condition, as well as effect of unidirectional single impulse currents of short durations are calculated and analyzed respectively. Finally, DC 60V is recommended as the lower level rating voltage through the comprehensive consideration of technical condition and cost of safety criteria.

Actions of arginine polyamine on voltage and ligand-activated whole cell currents recorded from cultured neurones.

PubMed

Scott, R H; Sweeney, M I; Kobrinsky, E M; Pearson, H A; Timms, G H; Pullar, I A; Wedley, S; Dolphin, A C

1992-05-01

1. Toxins from invertebrates have proved useful tools for investigation of the properties of ion channels. In this study we describe the actions of arginine polyamine which is believed to be a close analogue of FTX, a polyamine isolated from the American funnel web spider, Agelenopsis aperta. 2. Voltage-activated Ca2+ currents and Ca(2+)-dependent Cl- currents recorded from rat cultured dorsal root ganglion neurones were reversibly inhibited by arginine polyamine (AP; 0.001 to 100 microM). Low voltage-activated T-type Ca2+ currents were significantly more sensitive to AP than high voltage-activated Ca2+ currents. The IC50 values for the actions of AP on low and high voltage-activated Ca2+ currents were 10 nM and 3 microM respectively. AP was equally effective in inhibiting high voltage-activated currents carried by Ba2+, Sr2+ or Ca2+. However, AP-induced inhibition of Ca2+ currents was attenuated by increasing the extracellular Ca2+ concentration from 2 mM to 10 mM. 3. The actions of AP on a Ca(2+)-independent K+ current were more complex, 1 microM AP enhanced this current but 10 microM AP had a dual action, initially enhancing but then inhibiting the K+ current. 4. gamma-Aminobutyric acid-activated Cl- currents were also reversibly inhibited by 1 to 10 microM AP. In contrast N-methyl-D-aspartate currents recorded from rat cultured cerebellar neurones were greatly enhanced by 10 microM AP. 5. We conclude that at a concentration of 10 nM, AP is a selective inhibitor of low threshold T-type voltage-activated Ca2+ currents. However, at higher concentrations 1-10 microM AP interacts with ion channels or other membrane constituents to produce a variety of actions on both voltage and ligand gated ion channels.

Automatic Control Of Length Of Welding Arc

NASA Technical Reports Server (NTRS)

Iceland, William F.

1991-01-01

Nonlinear relationships among current, voltage, and length stored in electronic memory. Conceptual microprocessor-based control subsystem maintains constant length of welding arc in gas/tungsten arc-welding system, even when welding current varied. Uses feedback of current and voltage from welding arc. Directs motor to set position of torch according to previously measured relationships among current, voltage, and length of arc. Signal paths marked "calibration" or "welding" used during those processes only. Other signal paths used during both processes. Control subsystem added to existing manual or automatic welding system equipped with automatic voltage control.

Insulin increases excitability via a dose-dependent dual inhibition of voltage-activated K+ currents in differentiated N1E-115 neuroblastoma cells.

PubMed

Lima, Pedro A; Vicente, M Inês; Alves, Frederico M; Dionísio, José C; Costa, Pedro F

2008-04-01

A role in the control of excitability has been attributed to insulin via modulation of potassium (K(+)) currents. To investigate insulin modulatory effects on voltage-activated potassium currents in a neuronal cell line with origin in the sympathetic system, we performed whole-cell voltage-clamp recordings in differentiated N1E-115 neuroblastoma cells. Two main voltage-activated K(+) currents were identified: (a) a relatively fast inactivating current (I(fast) - time constant 50-300 ms); (b) a slow delayed rectifying K(+) current (I(slow) - time constant 1-4 s). The kinetics of inactivation of I(fast), rather than I(slow), showed clear voltage dependence. I(fast) and I(slow) exhibited different activation and inactivation dependence for voltage, and have different but nevertheless high sensitivities to tetraethylammonium, 4-aminopyridine and quinidine. In differentiated cells - rather than in non-differentiated cells - application of up to 300 nm insulin reduced I(slow) only (IC(50) = 6.7 nm), whereas at higher concentrations I(fast) was also affected (IC(50) = 7.7 microm). The insulin inhibitory effect is not due to a change in the activation or inactivation current-voltage profiles, and the time-dependent inactivation is also not altered; this is not likely to be a result of activation of the insulin-growth-factor-1 (IGF1) receptors, as application of IGF1 did not result in significant current alteration. Results suggest that the current sensitive to low concentrations of insulin is mediated by erg-like channels. Similar observations concerning the insulin inhibitory effect on slow voltage-activated K(+) currents were also made in isolated rat hippocampal pyramidal neurons, suggesting a widespread neuromodulator role of insulin on K(+) channels.

Method of determining the open circuit voltage of a battery in a closed circuit

DOEpatents

Brown, William E.

1980-01-01

The open circuit voltage of a battery which is connected in a closed circuit is determined without breaking the circuit or causing voltage upsets therein. The closed circuit voltage across the battery and the current flowing through it are determined under normal load and then a fractional change is made in the load and the new current and voltage values determined. The open circuit voltage is then calculated, according to known principles, from the two sets of values.

Use of the electrosurgical unit in a carbon dioxide atmosphere.

PubMed

Culp, William C; Kimbrough, Bradly A; Luna, Sarah; Maguddayao, Aris J; Eidson, Jack L; Paolino, David V

2016-01-01

The electrosurgical unit (ESU) utilizes an electrical discharge to cut and coagulate tissue and is often held above the surgical site, causing a spark to form. The voltage at which the spark is created, termed the breakdown voltage, is governed by the surrounding gaseous environment. Surgeons are now utilizing the ESU laparoscopically with carbon dioxide insufflation, potentially altering ESU operating characteristics. This study examines the clinical implications of altering gas composition by measuring the spark gap distance as a marker of breakdown voltage and use of the ESU on a biologic model, both in room air and carbon dioxide. Paschen's Law predicted a 35% decrease in gap distance in carbon dioxide, while testing revealed an average drop of 37-47% as compared to air. However, surgical model testing revealed no perceivable clinical difference. Electrosurgery can be performed in carbon dioxide environments, although surgeons should be aware of potentially altered ESU performance.

Probing of barrier induced deviations in current-voltage characteristics of polymer devices by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Khan, Motiur Rahman; Rao, K. S. R. Koteswara; Menon, R.

2017-05-01

Temperature dependent current-voltage measurements have been performed on poly(3-methylthiophene) based devices in metal/polymer/metal geometry in temperature range 90-300 K. Space charge limited current (SCLC) controlled by exponentially distributed traps is observed at all the measured temperatures at intermediate voltage range. At higher voltages, trap-free SCLC is observed at 90 K only while slope less than 2 is observed at higher temperatures which is quiet unusual in polymer devices. Impedance measurements were performed at different bias voltages. The unusual behavior observed in current-voltage characteristics is explained by Cole-Cole plot which gives the signature of interface dipole on electrode/polymer interface. Two relaxation mechanisms are obtained from the real part of impedance vs frequency spectra which confirms the interface related phenomena in the device

New PMOS LTPS TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Sang-Geun; Han, Sang-Myeon; Han, Min-Koo; Park, Kee-Chan

2008-03-01

New PMOS LTPS (low temperature polycrystalline silicon)-thin film transistor (TFT) pixel circuit, which can suppress an OLED current error caused by the hysteresis of LTPS-TFT for active matrix organic light emitting diode (AMOLED) display, is proposed and fabricated. The proposed pixel circuit employs a reset voltage driving so that the sweep direction of gate voltage in the current driving TFT is not altered by the gate voltage in the previous frame. Our experimental results show that OLED current error of the proposed pixel is successfully suppressed because a reset voltage can enable the starting gate voltage for a desired one not to be varied, while that of the conventional 2-TFT pixel exceeds over 15% due to the hysteresis of LTPS-TFT.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Total number of longwall faces drops below 50

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiscor, S.

2009-02-15

For the first time since Coal Age began its annual Longwall Census the number of faces has dropped below 50. A total of five mines operate two longwall faces. CONSOL Energy remains the leader with 12 faces. Arch Coal operates five longwall mines; Robert E. Murray owns five longwall mines. West Virginia has 13 longwalls, followed by Pennsylvania (8), Utah (6) and Alabama (6). A detailed table gives for each longwall installation, the ownership, seam height, cutting height, panel width and length, overburden, number of gate entries, depth of cut, model of equipment used (shearer, haulage system, roof support, facemore » conveyor, stage loader, crusher, electrical controls and voltage to face). 2 tabs., 1 photo.« less

Differential inhibition of N and P/Q Ca2+ currents by 5-HT1A and 5-HT1D receptors in spinal neurons of Xenopus larvae

PubMed Central

Sun, Qian-Quan; Dale, Nicholas

1998-01-01

In whole-cell patch clamp recordings made from non-sensory neurons acutely isolated from the spinal cord of Xenopus (stage 40–42) larvae, two forms of inhibition of the high voltage-activated (HVA) Ca2+ currents were produced by 5-HT. One was voltage dependent and associated with both slowing of the activation kinetics and shifting of the voltage dependence of the HVA currents. This inhibition was relieved by strong depolarizing prepulses. A second form of inhibition was neither associated with slowing of the activation kinetics nor relieved by depolarizing prepulses and was thus voltage independent. In all neurons examined, 5-HT (1 μM) reversibly reduced 34 ± 1.6 % (n = 102) of the HVA Ca2+ currents. In about 40 % of neurons, the inhibition was totally voltage independent. In another 5 %, the inhibition was totally voltage dependent. In the remaining neurons, inhibition was only partially (by around 40 %) relieved by a large depolarizing prepulse, suggesting that in these, the inhibition consisted of both voltage-dependent and -independent components. By using selective channel blockers, we found that 5-HT acted on both N- and P/Q-type channels. However, whereas the inhibition of P/Q-type currents was only voltage independent, the inhibition of N-type currents had both voltage-dependent and -independent components. The effects of 5-HT on HVA Ca2+ currents were mediated by 5-HT1A and 5-HT1D receptors. The 5-HT1A receptors not only preferentially caused voltage-independent inhibition, but did so by acting mainly on the ω-agatoxin-IVA-sensitive Ca2+ channels. In contrast, the 5-HT1D receptor produced both voltage-dependent and -independent inhibition and was preferentially coupled to ω-conotoxin-GVIA sensitive channels. This complexity of modulation may allow fine tuning of transmitter release and calcium signalling in the spinal circuitry of Xenopus larvae. PMID:9625870

Actions of arginine polyamine on voltage and ligand-activated whole cell currents recorded from cultured neurones.

PubMed Central

Scott, R. H.; Sweeney, M. I.; Kobrinsky, E. M.; Pearson, H. A.; Timms, G. H.; Pullar, I. A.; Wedley, S.; Dolphin, A. C.

1992-01-01

1. Toxins from invertebrates have proved useful tools for investigation of the properties of ion channels. In this study we describe the actions of arginine polyamine which is believed to be a close analogue of FTX, a polyamine isolated from the American funnel web spider, Agelenopsis aperta. 2. Voltage-activated Ca2+ currents and Ca(2+)-dependent Cl- currents recorded from rat cultured dorsal root ganglion neurones were reversibly inhibited by arginine polyamine (AP; 0.001 to 100 microM). Low voltage-activated T-type Ca2+ currents were significantly more sensitive to AP than high voltage-activated Ca2+ currents. The IC50 values for the actions of AP on low and high voltage-activated Ca2+ currents were 10 nM and 3 microM respectively. AP was equally effective in inhibiting high voltage-activated currents carried by Ba2+, Sr2+ or Ca2+. However, AP-induced inhibition of Ca2+ currents was attenuated by increasing the extracellular Ca2+ concentration from 2 mM to 10 mM. 3. The actions of AP on a Ca(2+)-independent K+ current were more complex, 1 microM AP enhanced this current but 10 microM AP had a dual action, initially enhancing but then inhibiting the K+ current. 4. gamma-Aminobutyric acid-activated Cl- currents were also reversibly inhibited by 1 to 10 microM AP. In contrast N-methyl-D-aspartate currents recorded from rat cultured cerebellar neurones were greatly enhanced by 10 microM AP. 5. We conclude that at a concentration of 10 nM, AP is a selective inhibitor of low threshold T-type voltage-activated Ca2+ currents.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:1380382

Multi-Wavelength Optical Pyrometry Investigation for Turbine Engine Applications.

NASA Astrophysics Data System (ADS)

Estevadeordal, Jordi; Nirmalan, Nirm; Wang, Guanghua; Thermal Systems Team

2011-11-01

An investigation of optical Pyrometry using multiple wavelengths and its application to turbine engine is presented. Current turbine engine Pyrometers are typically broadband Si-detector line-of-sight (LOS) systems. They identify hot spots and spall areas in blades and bucket passages by detection of bursts of higher voltage signals. However, the single color signal can be misleading for estimating temperature and emissivity variations in these bursts. Results of the radiant temperature, multi-color temperature and apparent emissivity are presented for turbine engine applications. For example, the results indicate that spall regions can be characterized using multi-wavelength techniques by showing that the temperature typically drops and the emissivity increases and that differentiates from the emissivity of the normal regions. Burst signals are analyzed with multicolor algorithms and changes in the LOS hot-gas-path properties and in the suction side, trailing edge, pressure side, fillet and platform surfaces characterized.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Time-implicit fluid/particle hybrid simulations of the anode plasma dynamics in ion diodes

NASA Astrophysics Data System (ADS)

Pointon, T. D.; Boine-Frankenheim, O.; Mehlhorn, T. A.

1997-04-01

Applied-B ion diode experiments with Li+1 ion sources on the PBFA II and SABRE ion accelerators show that early in the pulse the beam is essentially pure Li+1, but is rapidly overwhelmed by impurity ions, called the `parasitic load'. Furthermore, the increasing parasitic current rapidly drops the diode voltage, limiting the accelerator power that can be coupled into the beam. This `impedance collapse' is believed to arise from the desorption of impurity neutrals from the anode surface. These neutrals charge-exchange with the ions, rapidly expanding into the anode-cathode gap where they are ionized by beam ions or secondary electrons. In order to model these processes we are developing a 1 1/2 D electrostatic multifluid/PIC (hybrid) code, designed to self-consistently simulate collisional plasma/neutral systems with an arbitrary number of interacting species, over greatly varying density regimes and together with applied electric and magnetic fields.

Depression Care Management: Can Employers Purchase Improved Outcomes?

PubMed Central

Rost, Kathryn; Marshall, Donna; Shearer, Benjamin; Dietrich, Allen J.

2011-01-01

Fourteen vendors are currently selling depression care management products to US employers after randomized trials demonstrate improved work outcomes. The research team interviewed 10 (71.4%) of these vendors to compare their products to four key components of interventions demonstrated to improve work outcomes. Five of 10 depression products incorporate all four key components, three of which are sold by health maintenance organizations (HMOs); however, HMOs did not deliver these components at the recommended intensity and/or duration. Only one product delivered by a disease management company delivered all four components of care at the recommended intensity and duration. This “voltage drop,” which we anticipate will increase with product implementation, suggests that every delivery system should carefully evaluate the design of its depression product before implementation for its capacity to deliver evidence-based care, repeating these evaluations as new evidence emerges. PMID:21738872

Electrohydrodynamic convective heat transfer in a square duct.

PubMed

Grassi, Walter; Testi, Daniele

2009-04-01

Laminar to weakly turbulent forced convection in a square duct heated from the bottom is strengthened by ion injection from an array of high-voltage points opposite the heated strip. Both positive and negative ion injection are activated within the working liquid HFE-7100 (C(4)F(9)OCH(3)), with transiting electrical currents on the order of 0.1 mA. Local temperatures on the heated wall are measured by liquid crystal thermography. The tests are conducted in a Reynolds number range from 510 to 12,100. In any case, heat transfer is dramatically augmented, almost independently from the flow rate. The pressure drop increase caused by the electrohydrodynamically induced flow is also measured. A profitable implementation of the technique in the design of heat sinks and heat exchangers is foreseen; possible benefits are pumping power reduction, size reduction, and heat exchange capability augmentation.

Neutron, gamma ray, and temperature effects on the electrical characteristics of thyristors

NASA Technical Reports Server (NTRS)

Frasca, A. J.; Schwarze, G. E.

1992-01-01

Experimental data showing the effects of neutrons, gamma rays, and temperature on the electrical and switching characteristics of phase-control and inverter-type SCR's are presented. The special test fixture built for mounting, heating, and instrumenting the test devices is described. Four SCR's were neutron irradiated at 300 K and four at 365 K for fluences up to 3.2 x 10 exp 13 n/sq. cm, and eight were gamma irradiated at 300 K only for gamma doses up to 5.1 Mrads. The electrical measurements were made during irradiation and the switching measurements were made only before and after irradiation. Radiation induced crystal defects, resulting primarily from fast neutrons, caused the reduction of minority carrier lifetime through the generation of R-G centers. The reduction in lifetime caused increases in the on-state voltage drop and in the reverse and forward leakage currents, and decreases in the turn-off time.

Neutron, gamma ray, and temperature effects on the electrical characteristics of thyristors

NASA Technical Reports Server (NTRS)

Frasca, A. J.; Schwarze, G. E.

1992-01-01

Experimental data showing the effects of neutrons, gamma rays, and temperature on the electrical and switching characteristics of phase-control and inverter-type SCR's are presented. The special test fixture built for mounting, heating, and instrumenting the test devices is described. Four SCR's were neutron irradiated at 300 K and four at 365 K for fluences up to 3.2 x 10 exp 13 pn/sq. cm, and eight were gamma irradiated at 300 K only for gamma doses up to 5.1 Mrads. The electrical measurements were made during irradiation and the switching measurements were made only before and after irradiation. Radiation induced crystal defects, resulting primarily from fast neutrons, caused the reduction of minority carrier lifetime through the generation of R-G centers. The reduction in lifetime caused increases in the on-state voltage drop and in the reverse and forward leakage currents, and decreases in the turn-off time.

Validation of finite element model of transcranial electrical stimulation using scalp potentials: implications for clinical dose

NASA Astrophysics Data System (ADS)

Datta, Abhishek; Zhou, Xiang; Su, Yuzhou; Parra, Lucas C.; Bikson, Marom

2013-06-01

Objective. During transcranial electrical stimulation, current passage across the scalp generates voltage across the scalp surface. The goal was to characterize these scalp voltages for the purpose of validating subject-specific finite element method (FEM) models of current flow. Approach. Using a recording electrode array, we mapped skin voltages resulting from low-intensity transcranial electrical stimulation. These voltage recordings were used to compare the predictions obtained from the high-resolution model based on the subject undergoing transcranial stimulation. Main results. Each of the four stimulation electrode configurations tested resulted in a distinct distribution of scalp voltages; these spatial maps were linear with applied current amplitude (0.1 to 1 mA) over low frequencies (1 to 10 Hz). The FEM model accurately predicted the distinct voltage distributions and correlated the induced scalp voltages with current flow through cortex. Significance. Our results provide the first direct model validation for these subject-specific modeling approaches. In addition, the monitoring of scalp voltages may be used to verify electrode placement to increase transcranial electrical stimulation safety and reproducibility.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-01-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-09-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

Observation of Dust Stream Formation Produced by Low Current, High Voltage Cathode Spots

NASA Technical Reports Server (NTRS)

Foster, John E.

2004-01-01

Macro-particle acceleration driven by low current, high voltage cathode spots has been investigated. The phenomenon was observed to occur when nanometer and micrometer-sized particles in the presence of a discharge plasma were exposed to a high voltage pulse. The negative voltage pulse initiates the formation of multiple, high voltage, low current cathode spots which provides the mechanism of actual acceleration of the charged dust particles. Dust streams generated by this process were detected using laser scattering techniques. The particle impact craters observed at the surface of downstream witness badges were documented using SEM and light microscopy.

Voltage controlled current source

DOEpatents

Casne, Gregory M.

1992-01-01

A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

Rectification of Acetylcholine-Elicited Currents in PC12 Pheochromocytoma Cells

NASA Astrophysics Data System (ADS)

Ifune, C. K.; Steinbach, J. H.

1990-06-01

The current-voltage (I-V) relationship for acetylcholine-elicited currents in the rat pheochromocytoma cell line PC12 is nonlinear. Two voltage-dependent processes that could account for the whole-cell current rectification were examined, receptor channel gating and single receptor channel permeation. We found that both factors are involved in the rectification of the whole-cell currents. The voltage dependence of channel gating determines the shape of the I-V curve at negative potentials. The single-channel I-V relationship is inwardly rectifying and largely responsible for the characteristic shape of the whole-cell I-V curve at positive potentials. The rectification of the single-channel currents is produced by the voltage-dependent block of outward currents by intracellular Mg2+ ions.

Simple Cell Balance Circuit

NASA Technical Reports Server (NTRS)

Johnson, Steven D.; Byers, Jerry W.; Martin, James A.

2012-01-01

A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

New quantum oscillations in current driven small junctions

NASA Technical Reports Server (NTRS)

Ben-Jacob, E.; Gefen, Y.

1985-01-01

The response of current-biased Josephson and normal tunnel junctions (JJs and NTJs) such as those fabricated by Voss and Webb (1981) is predicted from a quantum-mechanical description based on the observation that the response of a current-driven open system is equivalent to that of a closed system subject to an external time-dependent voltage bias. Phenomena expected include voltage oscillations with no dc voltage applied, inverse Shapiro steps of dc voltage in the presence of microwave radiation, voltage oscillation in a JJ and an NTJ coupled by a capacitance to a current-biased junction, JJ voltage oscillation frequency = I/e rather than I/2e, and different NTJ resistance than in the voltage-driven case. The effects require approximate experimental parameter values Ic = 15 nA, C = 1 fF, and T much less than 0.4 K for JJs and Ic = a few nA, C = 1 fF, and R = 3 kiloohms for 100-microV inverse Shapiro steps at 10 GHz in NTJs.

Electrical probe characteristic recovery by measuring only one time-dependent parameter

NASA Astrophysics Data System (ADS)

Costin, C.; Popa, G.; Anita, V.

2016-03-01

Two straightforward methods for recovering the current-voltage characteristic of an electrical probe are proposed. Basically, they consist of replacing the usual power supply from the probe circuit with a capacitor which can be charged or discharged by the probe current drained from the plasma. The experiment requires the registration of only one time-dependent electrical parameter, either the probe current or the probe voltage. The corresponding time-dependence of the second parameter, the probe voltage, or the probe current, respectively, can be calculated using an integral or a differential relation and the current-voltage characteristic of the probe can be obtained.

Brake Failure from Residual Magnetism in the Mars Exploration Rover Lander Petal Actuator

NASA Technical Reports Server (NTRS)

Jandura, Louise

2004-01-01

In January 2004, two Mars Exploration Rover spacecraft arrived at Mars. Each safely delivered an identical rover to the Martian surface in a tetrahedral lander encased in airbags. Upon landing, the airbags deflated and three Lander Petal Actuators opened the three deployable Lander side petals enabling the rover to exit the Lander. Approximately nine weeks prior to the scheduled launch of the first spacecraft, one of these mission-critical Lander Petal Actuators exhibited a brake stuck-open failure during its final flight stow at Kennedy Space Center. Residual magnetism was the definitive conclusion from the failure investigation. Although residual magnetism was recognized as an issue in the design, the lack of an appropriately specified lower bound on brake drop-out voltage inhibited the discovery of this problem earlier in the program. In addition, the brakes had more unit-to-unit variation in drop-out voltage than expected, likely due to a larger than expected variation in the magnetic properties of the 15-5 PH stainless steel brake plates. Failure analysis and subsequent rework of two other Lander Petal Actuators with marginal brakes was completed in three weeks, causing no impact to the launch date.

Progress Check Module; Basic Electricity and Electronics Individualized Learning System. Progress Check Booklet.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The Progress Check Booklet is designed to be used by the student working in the programed course to determine if he has mastered the concepts in the course booklets on: electrical current; voltage; resistance; measuring current and voltage in series circuits; relationships of current, voltage, and resistance; parellel circuits; combination…

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

Low-temperature performance of semiconducting asymmetric nanochannel diodes

NASA Astrophysics Data System (ADS)

Akbas, Y.; Savich, G. R.; Jukna, A.; Plecenik, T.; Ďurina, P.; Plecenik, A.; Wicks, G. W.; Sobolewski, Roman

2017-10-01

We present our studies on fabrication and electrical and optical characterization of semiconducting asymmetric nanochannel diodes (ANCDs), focusing mainly on the temperature dependence of their current-voltage (I-V) characteristics in the range from room temperature to 77 K. These measurements enable us to elucidate the electron transport mechanism in a nanochannel. Our test devices were fabricated in a GaAs/AlGaAs heterostructure with a two-dimensional electron gas layer and were patterned using electron-beam lithography. The 250-nm-wide, 70-nm-deep trenches that define the nanochannel were ion-beam etched using the photoresist as a mask, so the resulting nanostructure consisted of approximately ten ANCDs connected in parallel with 2-µm-long, 230-nm-wide nanochannels. The ANCD I-V curves collected in the dark exhibited nonlinear, diode-type behavior at all tested temperatures. Their forward-biased regions were fitted to the classical diode equation with a thermionic barrier, with the ideality factor n and the saturation current as fitting parameters. We have obtained very good fits, but with n as large as ˜50, suggesting that there must be a substantial voltage drop likely at the contact pads. The thermionic energy barrier was determined to be 56 meV at high temperatures. We have also observed that under optical illumination our ANCDs at low temperatures exhibited, at low illumination powers, a very strong photoresponse enhancement that exceeded that at room temperature. At 78 K, the responsivity was of the order of 104 A/W at the nW-level light excitation.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

PubMed

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-08-10

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

PubMed Central

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-01-01

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively. PMID:28773801

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

PubMed

Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

2014-04-07

A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

Optimized Controller Design for a 12-Pulse Voltage Source Converter Based HVDC System

NASA Astrophysics Data System (ADS)

Agarwal, Ruchi; Singh, Sanjeev

2017-12-01

The paper proposes an optimized controller design scheme for power quality improvement in 12-pulse voltage source converter based high voltage direct current system. The proposed scheme is hybrid combination of golden section search and successive linear search method. The paper aims at reduction of current sensor and optimization of controller. The voltage and current controller parameters are selected for optimization due to its impact on power quality. The proposed algorithm for controller optimizes the objective function which is composed of current harmonic distortion, power factor, and DC voltage ripples. The detailed designs and modeling of the complete system are discussed and its simulation is carried out in MATLAB-Simulink environment. The obtained results are presented to demonstrate the effectiveness of the proposed scheme under different transient conditions such as load perturbation, non-linear load condition, voltage sag condition, and tapped load fault under one phase open condition at both points-of-common coupling.

Crebanine inhibits voltage-dependent Na+ current in guinea-pig ventricular myocytes.

PubMed

Xiao-Shan, He; Qing, Lin; Yun-Shu, Ma; Ze-Pu, Yu

2014-01-01

To study the effects of crebanine on voltage-gated Na(+) channels in cardiac tissues. Single ventricular myocytes were enzymatically dissociated from adult guinea-pig heart. Voltage-dependent Na(+) current was recorded using the whole cell voltage-clamp technique. Crebanine reversibly inhibited Na(+) current with an IC50 value of 0.283 mmol·L(-1) (95% confidence range: 0.248-0.318 mmol·L(-1)). Crebanine at 0.262 mmol·L(-1) caused a negative shift (about 12 mV) in the voltage-dependence of steady-state inactivation of Na(+) current, and retarded its recovery from inactivation, but did not affect its activation curve. In addition to blocking other voltage-gated ion channels, crebanine blocked Na(+) channels in guinea-pig ventricular myocytes. Crebanine acted as an inactivation stabilizer of Na(+) channels in cardiac tissues. Copyright © 2014 China Pharmaceutical University. Published by Elsevier B.V. All rights reserved.

Separate Cl^- Conductances Activated by cAMP and Ca2+ in Cl^--Secreting Epithelial Cells

NASA Astrophysics Data System (ADS)

Cliff, William H.; Frizzell, Raymond A.

1990-07-01

We studied the cAMP- and Ca2+-activated secretory Cl^- conductances in the Cl^--secreting colonic epithelial cell line T84 using the whole-cell patch-clamp technique. Cl^- and K^+ currents were measured under voltage clamp. Forskolin or cAMP increased Cl^- current 2-15 times with no change in K^+ current. The current-voltage relation for cAMP-activated Cl^- current was linear from -100 to +100 mV and showed no time-dependent changes in current during voltage pulses. Ca2+ ionophores or increased pipette Ca2+ increased both Cl^- and K^+ currents 2-30 times. The Ca2+-activated Cl^- current was outwardly rectified, activated during depolarizing voltage pulses, and inactivated during hyperpolarizing voltage pulses. Addition of ionophore after forskolin further increased Cl^- conductance 1.5-5 times, and the current took on the time-dependent characteristics of that stimulated by Ca2+. Thus, cAMP and Ca2+ activate Cl^- conductances with different properties, implying that these second messengers activate different Cl^- channels or that they induce different conductive and kinetic states in the same Cl^- channel.

Module Two: Voltage; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

In this module the student will study and learn what voltage is, how it is generated, what AC (alternating current) and DC (direct current) are and why both kinds are needed, and how to measure voltages. The module is divided into six lessons: EMF (electromotive force) from chemical action, magnetism, electromagnetic induction, AC voltage, the…

Transient Performance Improvement Circuit (TPIC)s for DC-DC converter applications

NASA Astrophysics Data System (ADS)

Lim, Sungkeun

Gordon Moore famously predicted the exponential increase in transistor integration and computing power that has been witnessed in recent decades [1]. In the near future, it is expected that more than one billion transistors will be integrated per chip, and advanced microprocessors will require clock speeds in excess of several GHz. The increasing number of transistors and high clock speeds will necessitate the consumption of more power. By 2014, it is expected that the maximum power consumption of the microprocessor will reach approximately 150W, and the maximum load current will be around 150A. Today's trend in power and thermal management is to reduce supply voltage as low as possible to reduce delivered power. It is anticipated that the Intel cores will operate on 0.8V of supply voltage by 2014 [2]. A significant challenge in Voltage Regulator Module (VRM) development for next generation microprocessors is to regulate the supply voltage within a certain tolerance band during high slew rate load transitions, since the required supply voltage tolerance band will be much narrower than the current requirement. If VR output impedance is maintained at a constant value from DC to high frequency, large output voltage spikes can be avoided during load cur- rent transients. Based on this, the Adaptive Voltage Position (AVP) concept was developed to achieve constant VR output impedance to improve transient response performance [3]. However, the VR output impedance can not be made constant over the entire frequency range with AVP design, because the AVP design makes the VR output impedance constant only at low frequencies. To make the output impedance constant at high frequencies, many bulk capacitors and ceramic capacitors are required. The tight supply voltage tolerance for the next generation of microprocessors during high slew rate load transitions requires fast transient response power supplies. A VRM can not follow the high slew rate load current transients, because of the slow inductor current slew rate which is determined by the input voltage, output voltage, and the inductance. The remaining inductor current in the power delivery path will charge the output capacitors and develop a voltage across the ESR. As a result, large output voltage spikes occur during load current transients. Due to their limited control bandwidth, traditional VRs can not sufficiently respond rapidly to certain load transients. As a result, a large output voltage spike can occur during load transients, hence requiring a large amount of bulk capacitance to decouple the VR from the load [2]. If the remaining inductor current is removed from the power stage or the inductor current slew rate is changed, the output voltage spikes can be clamped, allowing the output capacitance to be reduced. A new design methodology for a Transient Performance Improvement Circuit(TPIC) based on controlling the output impedance of a regulator is presented. The TPIC works in parallel with a voltage regulator (VR)'s ceramic capacitors to achieve faster voltage regulation without the need for a large bulk capacitance, and can serve as a replacement for bulk capacitors. The specific function of the TPIC is to mimic the behavior of the bulk capacitance in a traditional VRM by sinking and sourcing large currents during transients, allowing the VR to respond quickly to current transients without the need for a large bulk capacitance. This will allow fast transient response without the need for a large bulk capacitor. The main challenge in applying the TPIC is creating a design which will not interfere with VR operation. A TPIC for a 4 Switch Buck-Boost (4SBB) converter is presented which functions by con- trolling the inductor current slew rate during load current transients. By increasing the inductor current slew rate, the remaining inductor current can be removed from the 4SBB power delivery path and the output voltage spike can be clamped. A second TPIC is presented which is designed to improve the performance of an LDO regulator during output current transients. A TPIC for a LDO regulator is proposed to reduce the over voltage spike settling time. During a load current step down transient, the only current discharging path is a light load current. However, it takes a long time to discharge the current charged in the output capacitors with the light load current. The proposed TPIC will make an additional current discharging path to reduce the long settling time. By reducing the settling time, the load current transient frequency of the LDO regulator can be increased. A Ripple Cancellation Circuit (RCC) is proposed to reduce the output voltage ripple. The RCC has a very similar concept with the TPIC which is sinking or injecting additional current to the power stage to compensate the inductor ripple current. The proposed TPICs and RCC have been implemented with a 0.6m CMOS process. A single-phase VR, a 4SBB converter, and a LDO regulator have been utilized with the proposed TPIC to evaluate its performance. The theoretical analysis will be confirmed by Cadence simulation results and experimental results.

Self-Powered Viscosity and Pressure Sensing in Microfluidic Systems Based on the Piezoelectric Energy Harvesting of Flowing Droplets.

PubMed

Wang, Zhao; Tan, Lun; Pan, Xumin; Liu, Gao; He, Yahua; Jin, Wenchao; Li, Meng; Hu, Yongming; Gu, Haoshuang

2017-08-30

The rapid development of microscaled piezoelectric energy harvesters has provided a simple and highly efficient way for building self-powered sensor systems through harvesting the mechanical energy from the ambient environment. In this work, a self-powered microfluidic sensor that can harvest the mechanical energy of the fluid and simultaneously monitor their characteristics was fabricated by integrating the flexible piezoelectric poly(vinylidene fluoride) (PVDF) nanofibers with the well-designed microfluidic chips. Those devices could generate open-circuit high output voltage up to 1.8 V when a droplet of water is flowing past the suspended PVDF nanofibers and result in their periodical deformations. The impulsive output voltage signal allowed them to be utilized for droplets or bubbles counting in the microfluidic systems. Furthermore, the devices also exhibited self-powered sensing behavior due to the decreased voltage amplitude with increasing input pressure and liquid viscosity. The drop of output voltage could be attributed to the variation of flow condition and velocity of the droplets, leading to the reduced deformation of the piezoelectric PVDF layer and the decrease of the generated piezoelectric potential.

Improvable method for Halon 1301 concentration measurement based on infrared absorption

NASA Astrophysics Data System (ADS)

Hu, Yang; Lu, Song; Guan, Yu

2015-09-01

Halon 1301 has attached much interest because of its pervasive use as an effective fire suppressant agent in aircraft related fires, and the study of fire suppressant agent concentration measurement is especially of interest. In this work, a Halon 1301 concentration measurement method based on the Beer-Lambert law is developed. IR light is transmitted through mixed gas, and the light intensity with and without the agent present is measured. The intensity ratio is a function of the volume percentage of Halon 1301, and the voltage output of the detector is proportional to light intensity. As such, the relationship between the volume percentage and voltage ratio can be established. The concentration measurement system shows a relative error of the system less than ±2.50%, and a full scale error within 1.20%. This work also discusses the effect of temperature and relative humidity (RH) on the calibration. The experimental results of voltage ratio versus Halon 1301 volume percentage relationship show that the voltage ratio drops significantly as temperature rises from 25 to 100 °C, and it decreases as RH rises from 0% to 100%.

Low-jitter high-power thyristor array pulse driver and generator

DOEpatents

Hanks, Roy L.

2002-01-01

A method and apparatus for generating low-jitter, high-voltage and high-current pulses for driving low impedance loads such as detonator fuses uses a MOSFET driver which, when triggered, discharges a high-voltage pre-charged capacitor into the primary of a toroidal current-multiplying transformer with multiple isolated secondary windings. The secondary outputs are suitable for driving an array of thyristors that discharge a precharged high-voltage capacitor and thus generating the required high-voltage and high-current pulse.

Power-MOSFET Voltage Regulator

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Novel zero voltage transition pulse width modulation flyback converter

NASA Astrophysics Data System (ADS)

Adib, Ehsan; Farzanehfard, Hosein

2010-09-01

In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

Bipolar square-wave current source for transient electromagnetic systems based on constant shutdown time

NASA Astrophysics Data System (ADS)

Wang, Shilong; Yin, Changchun; Lin, Jun; Yang, Yu; Hu, Xueyan

2016-03-01

Cooperative work of multiple magnetic transmitting sources is a new trend in the development of transient electromagnetic system. The key is the bipolar current waves shutdown, concurrently in the inductive load. In the past, it was difficult to use the constant clamping voltage technique to realize the synchronized shutdown of currents with different peak values. Based on clamping voltage technique, we introduce a new controlling method with constant shutdown time. We use the rising time to control shutdown time and use low voltage power source to control peak current. From the viewpoint of the circuit energy loss, by taking the high-voltage capacitor bypass resistance and the capacitor of the passive snubber circuit into account, we establish the relationship between the rising time and the shutdown time. Since the switch is not ideal, we propose a new method to test the shutdown time by the low voltage, the high voltage and the peak current. Experimental results show that adjustment of the current rising time can precisely control the value of the clamp voltage. When the rising time is fixed, the shutdown time is unchanged. The error for shutdown time deduced from the energy consumption is less than 6%. The new controlling method on current shutdown proposed in this paper can be used in the cooperative work of borehole and ground transmitting system.

Bipolar square-wave current source for transient electromagnetic systems based on constant shutdown time.

PubMed

Wang, Shilong; Yin, Changchun; Lin, Jun; Yang, Yu; Hu, Xueyan

2016-03-01

Cooperative work of multiple magnetic transmitting sources is a new trend in the development of transient electromagnetic system. The key is the bipolar current waves shutdown, concurrently in the inductive load. In the past, it was difficult to use the constant clamping voltage technique to realize the synchronized shutdown of currents with different peak values. Based on clamping voltage technique, we introduce a new controlling method with constant shutdown time. We use the rising time to control shutdown time and use low voltage power source to control peak current. From the viewpoint of the circuit energy loss, by taking the high-voltage capacitor bypass resistance and the capacitor of the passive snubber circuit into account, we establish the relationship between the rising time and the shutdown time. Since the switch is not ideal, we propose a new method to test the shutdown time by the low voltage, the high voltage and the peak current. Experimental results show that adjustment of the current rising time can precisely control the value of the clamp voltage. When the rising time is fixed, the shutdown time is unchanged. The error for shutdown time deduced from the energy consumption is less than 6%. The new controlling method on current shutdown proposed in this paper can be used in the cooperative work of borehole and ground transmitting system.