New electron trap in p-type Czochralski silicon

NASA Technical Reports Server (NTRS)

Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

1984-01-01

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT

NASA Astrophysics Data System (ADS)

Kirpo, Maksims

2013-05-01

Silicon crystals for high efficiency solar cells are produced mainly by the Czochralski (CZ) crystal growth method. Computer simulations of the CZ process established themselves as a basic tool for optimization of the growth process which allows to reduce production costs keeping high quality of the crystalline material. The author shows the application of the general Computational Fluid Dynamics (CFD) code ANSYS FLUENT to solution of the static two-dimensional (2D) axisymmetric global model of the small industrial furnace for growing of silicon crystals with a diameter of 100 mm. The presented numerical model is self-sufficient and incorporates the most important physical phenomena of the CZ growth process including latent heat generation during crystallization, crystal-melt interface deflection, turbulent heat and mass transport, oxygen transport, etc. The demonstrated approach allows to find the heater power for the specified pulling rate of the crystal but the obtained power values are smaller than those found in the literature for the studied furnace. However, the described approach is successfully verified with the respect to the heater power by its application for the numerical simulations of the real CZ pullers by "Bosch Solar Energy AG".

Spatial distribution of structural defects in Cz-seeded directionally solidified silicon ingots: An etch pit study

NASA Astrophysics Data System (ADS)

Lantreibecq, A.; Legros, M.; Plassat, N.; Monchoux, J. P.; Pihan, E.

2018-02-01

The PV properties of wafers processed from Cz-seeded directionally solidified silicon ingots suffer from variable structural defects. In this study, we draw an overview on the types of structural defects encountered in the specific case of full 〈1 0 0〉 oriented growth. We found micro twins, background dislocations, and subgrains boundaries. We discuss the possible links between thermomechanical stresses and growth processes with spatial evolution of both background dislocation densities and subgrain boundaries length.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

NASA Astrophysics Data System (ADS)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

NASA Astrophysics Data System (ADS)

Ostapenko, S.; Tarasov, I.

2000-04-01

A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

Magnetomechanical effect in silicon (Cz-Si) surface layers

NASA Astrophysics Data System (ADS)

Koplak, O. V.; Dmitriev, A. I.; Morgunov, R. B.

2012-07-01

The mechanical properties of near-surface layers of Czochralski-grown silicon crystals Cz- n-Si(111) have been found to undergo changes in response to an external constant magnetic field ( B ˜ 0.1 T). A magnetically induced variation in the microhardness, Young's modulus, and coefficient of plasticity of silicon crystals correlates with the change in the lattice parameter and internal stresses of the sample. The growth of an oxide film under exposure to a magnetic field plays the principal role in the magnetomechanical effect due to a decrease in the concentration of oxygen complexes in the near-surface layers of the sample. In microstructured silicon, where the surface is considerably more developed, the magnetic field induces more profound changes in the internal stresses as compared to single crystals.

Electrical parameter changes in silicon solar cells induced by thermal donor formation

NASA Astrophysics Data System (ADS)

Ruiz, J. M.; Cid, M.

Statistical results of 450 C annealing experiments of variable duration, performed on n(+)pp(+), 10-ohm-cm Czochralski silicon (Cz silicon), bifacial solar cells are presented. The specific temperature used is known to favor the nucleation of interstitial oxygen, creating the thermal donors, with important effects on the electrical properties of Cz silicon. Two distinct behaviors are observed with solar cells. The annealing during moderate time (below 4-5 h) leads, on the average, to an improvement of the photovoltaic performances. Longer heat treatments (mainly above 8 h) induce an effective inversion of the base polarity (from p type to n type), with the net result of partially losing the precedent benefits. Both phenomena have been found to be permanent, provided further processes at higher temperatures are avoided.

Silicon solar cell process development, fabrication and analysis

NASA Technical Reports Server (NTRS)

Yoo, H. I.; Iles, P. A.; Leung, D. C.

1981-01-01

Solar cells were fabricated from EFG ribbons dendritic webs, cast ingots by heat exchanger method, and cast ingots by ubiquitous crystallization process. Baseline and other process variations were applied to fabricate solar cells. EFG ribbons grown in a carbon-containing gas atmosphere showed significant improvement in silicon quality. Baseline solar cells from dendritic webs of various runs indicated that the quality of the webs under investigation was not as good as the conventional CZ silicon, showing an average minority carrier diffusion length of about 60 um versus 120 um of CZ wafers. Detail evaluation of large cast ingots by HEM showed ingot reproducibility problems from run to run and uniformity problems of sheet quality within an ingot. Initial evaluation of the wafers prepared from the cast polycrystalline ingots by UCP suggested that the quality of the wafers from this process is considerably lower than the conventional CZ wafers. Overall performance was relatively uniform, except for a few cells which showed shunting problems caused by inclusions.

Kinetics of new thermal donors (NTDs) in CZ-silicon based on FTIR analysis

NASA Astrophysics Data System (ADS)

Singh, Rajeev; Singh, Shyam; Yadav, Bal Chandra

2018-05-01

Oxygen is quite friendly to silicon and is interstitially positioned well guarded by neighbouring silicon atoms on regular sites, provides mechanical strength to the silicon wafers and helps in internal gettering. Oxygen dimers are a fast diffusing species. Presence of trimers provides a wider platform for interconversion of dimer-trimer and V-O interaction. Oxygen atoms in isomeric positions really play a trick in the formation of TDD0 - TDD16. Other members of the donor species are likely due to the addition of dimers/trimers. FTIR analysis of boron-doped CZ-silicon annealed at 495 °C revealed a unique feature that the nature of 999 cm-1 absorption peak corresponding to TDD3 is contrary to 1107 cm-1 absorption peak corresponding to interstitial oxygen in silicon. Isothermal annealing at different temperatures also indicates slow disappearance of one donor species and emergence of other donor species. Thermal acceptors and recombination centers intrinsically present in the as grown silicon crystal and/or generated as a result of annealing do contribute to lower the donor concentration.

Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers

NASA Astrophysics Data System (ADS)

Goto, Hiroyuki; Pan, Lian-Sheng; Tanaka, Masafumi; Kashima, Kazuhiko

2001-06-01

The properties of nitrogen-doped and hydrogen-annealed Czochralski-grown silicon (NHA-CZ-Si) wafers were investigated in this study. The quality of the subsurface was investigated by monitoring the generation lifetime of minority carriers, as measured by the capacitance-time measurements of a metal oxide silicon capacitor (MOS C-t). The intrinsic gettering (IG) ability was investigated by determining the nickel concentration on the surface and in the subsurface as measured by graphite furnace atomic absorption spectrometry (GFAAS) after the wafer was deliberately contaminated with nickel. From the results obtained, the generation lifetimes of these NHA-CZ-Si wafers were determined to be almost the same as, or a little longer than those of epitaxial wafers, and the IG ability was proportional to the total volume of oxygen precipitates [i.e., bulk micro defects (BMDs)], which was influenced by the oxygen and nitrogen concentrations in the wafers. Therefore, it is suggested that the subsurface of the NHA-CZ-Si wafers is of good quality and the IG capacity is controllable by the nitrogen and oxygen concentrations in the wafers.

Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors

NASA Astrophysics Data System (ADS)

Onaka-Masada, Ayumi; Nakai, Toshiro; Okuyama, Ryosuke; Okuda, Hidehiko; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Kurita, Kazunari; Sueoka, Koji

2018-02-01

The effect of oxygen (O) concentration on the Fe gettering capability in a carbon-cluster (C3H5) ion-implanted region was investigated by comparing a Czochralski (CZ)-grown silicon substrate and an epitaxial growth layer. A high Fe gettering efficiency in a carbon-cluster ion-implanted epitaxial growth layer, which has a low oxygen region, was observed by deep-level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). It was demonstrated that the amount of gettered Fe in the epitaxial growth layer is approximately two times higher than that in the CZ-grown silicon substrate. Furthermore, by measuring the cathodeluminescence, the number of intrinsic point defects induced by carbon-cluster ion implantation was found to differ between the CZ-grown silicon substrate and the epitaxial growth layer. It is suggested that Fe gettering by carbon-cluster ion implantation comes through point defect clusters, and that O in the carbon-cluster ion-implanted region affects the formation of gettering sinks for Fe.

Vincenzo LaSalvia | NREL

Science.gov Websites

;Utilization of Tabula Rasa to stabilize bulk lifetimes in n-Cz silicon for high-performance solar cell /SiOx/pc-Si passivated contacts to n-type Si solar cells." Presented at the 40th IEEE Photovoltaic , and P. Stradins. "Heterojunction rear passivated contact for high efficiency n-Cz Si solar cells

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

NASA Astrophysics Data System (ADS)

Sabanskis, A.; Virbulis, J.

2018-05-01

Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

A review of high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Rohatgi, A.

1986-01-01

Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

NASA Astrophysics Data System (ADS)

Wang, Chenlei

The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to control the solidification interface of Cz system by adjusting heater powers. For the EFG system, parametric studies are performed to discuss the effect of several growth parameters including window opening size, argon gas flow rate and growth thermal environment on the temperature distribution, silicon tube thickness and pulling rate. Two local models are developed and integrated with the global model to investigate the detailed transport phenomena in a small region around the solidification interface including silicon crystal, silicon melt, free surface, liquid-solid interface and graphite die design. Different convection forms are taken into consideration.

Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

NASA Astrophysics Data System (ADS)

Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

2016-11-01

The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

Kerfless epitaxial silicon wafers with 7 ms carrier lifetimes and a wide lift-off process window

NASA Astrophysics Data System (ADS)

Gemmel, Catherin; Hensen, Jan; David, Lasse; Kajari-Schröder, Sarah; Brendel, Rolf

2018-04-01

Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing window appears to be a challenge for this process. This holds in particularly for the etching current density of the separation layer that leads to lift-off failures if it is too large or too low. Here we present kerfless PSI wafers of high electronic quality that we fabricate on weakly reorganized porous Si with etch current densities varying in a wide process window from 110 to 150 mA/cm2. We are able to detach all 17 out of 17 epitaxial wafers. All wafers exhibit charge carrier lifetimes in the range of 1.9 to 4.3 ms at an injection level of 1015 cm-3 without additional high-temperature treatment. We find even higher lifetimes in the range of 4.6 to 7.0 ms after applying phosphorous gettering. These results indicate that a weak reorganization of the porous layer can be beneficial for a large lift-off process window while still allowing for high carrier lifetimes.

Advanced Czochralski silicon growth technology for photovoltaic modules

NASA Technical Reports Server (NTRS)

Daud, T.; Kachare, A. H.

1982-01-01

Several economic analyses had indicated that large-diameter, multiple ingot growth using a single crucible with melt replenishment would be required for Cz growth to be economically viable. Based on the results of these analyses, two liquid and two solid feed melt replenishment approaches were initiated. The sequential solid feed melt replenishment approach, which demonstrated elements of technical feasibility is described in detail in this paper. Growth results of multiple ingots (10-cm-diameter, totaling 100 kg; and 15-cm-diameter, totaling 150 kg weight per crucible) are presented. Solar cells were fabricated and analyzed to evaluate the effects of structure and chemical purities as a result of multiple growth. The results indicate that, with semiconductor-grade silicon, feedstock impurity build-up does not seem to degrade cell performance. For polycrystalline cells, the average efficiencies are 15 to 25% lower than those of single crystalline cells. Concerns regarding single crystal yields, crucible quality and growth speed are indicated, and present status and future research thrusts are also discussed.

Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si

NASA Astrophysics Data System (ADS)

Li, Jiyang; Song, Lihui; Yu, Xuegong; Yang, Deren

2018-04-01

Oxygen precipitates (OPs) are unavoidably formed in Czochralski silicon (CZ-Si) containing relatively high concentrations of oxygen. The recombination behavior of such defects is also vital for bulk devices like solar cells as they can reduce the minority carrier lifetime and degrade the cell performance. In our experiments, the characteristics of oxygen precipitation in n-type CZ-Si are systematically investigated by means of Fourier transform infrared spectroscopy (FTIR), deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). It is found that the iron contamination in n-type CZ-Si can strongly influence the OPs generation and their electrical properties, whereas the hydrogen passivation can effectively reduce the recombination activity of OPs.

Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

PubMed

Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

2014-10-07

In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

NASA Astrophysics Data System (ADS)

Stockmeier, L.; Kranert, C.; Raming, G.; Miller, A.; Reimann, C.; Rudolph, P.; Friedrich, J.

2018-06-01

During the growth of [0 0 1]-oriented, heavily n-type doped silicon crystals by the Czochralski (CZ) method dislocation formation occurs frequently which leads to a reduction of the crystal yield. In this publication the evolution of the solid-liquid interface and the formation of the {1 1 1} edge facets are analyzed on a microscopic scale as possible reason for dislocation formation in heavily n-type doped [0 0 1]-oriented CZ crystals. A correlation between the length of the {1 1 1} edge facets and the curvature of the interface is found. They ultimately promote supercooled areas and interrupted growth kinetics, which increase the probability for dislocation formation at the boundary between the {1 1 1} edge facets and the atomically rough interface.

Progress research of non-Cz silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1983-01-01

The simultaneous diffusion of liquid boron and liquid phosphorus dopants into N-type dendritic silicon web for solar cells was investigated. It is planned that the diffusion parameters required to achieve the desired P(+)NN(+) cell structure be determined and the resultant cell properties be compared to cells produced in a sequential differential process. A cost analysis of the simultaneous junction formation process is proposed.

Utilization of Tabula Rasa to Stabilize Bulk Lifetimes in n-Cz Silicon for High-Performance Solar Cell Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

LaSalvia, Vincenzo; Jensen, Mallory Ann; Youssef, Amanda

2016-11-21

We investigate a high temperature, high cooling-rate anneal Tabula Rasa (TR) and report its implications on n-type Czochralski-grown silicon (n-Cz Si) for photovoltaic fabrication. Tabula Rasa aims at dissolving and homogenizing oxygen precipitate nuclei that can grow during the cell process steps and degrade the cell performance due to their high internal gettering and recombination activity. The Tabula Rasa thermal treatment is performed in a clean tube furnace with cooling rates >100 degrees C/s. We characterize the bulk lifetime by Sinton lifetime and photoluminescence mapping just after Tabula Rasa, and after the subsequent cell processing. After TR, the bulk lifetimemore » surprisingly degrades to <; 0.1ms, only to recover to values equal or higher than the initial non-treated wafer (several ms), after typical high temperature cell process steps. Those include boron diffusion and oxidation; phosphorus diffusion/oxidation; ambient annealing at 850 degrees C; and crystallization annealing of tunneling-passivating contacts (doped polycrystalline silicon on 1.5 nm thermal oxide). The drastic lifetime improvement during high temperature cell processing is attributed to improved external gettering of metal impurities and annealing of intrinsic point defects. Time and injection dependent lifetime spectroscopy further reveals the mechanisms of lifetime improvement after Tabula Rasa treatment. Additionally, we report the efficacy of Tabula Rasa on n-type Cz-Si wafers and its dependence on oxygen concentration, correlated to position within the ingot.« less

Pressure-induced transformations of nitrogen implanted into silicon

NASA Astrophysics Data System (ADS)

Akhmetov, V. D.; Misiuk, A.; Barcz, A.; Richter, H.

2006-03-01

Czochralski (CZ) Si samples implanted with nitrogen, with doses 1017 ion/cm2 and 1018 ion/cm2, at 140 keV, were studied by means of Fourier transform infrared spectroscopy after annealing at 1130 °C/5 h under different hydrostatic pressures, from 1 bar to 10.7 kbar. It has been found for each pressure applied, that the increased nitrogen dose leads to transformation of the broadband spectra to the fine structure ones, corresponding to crystalline silicon nitride. The spectral position of observed sharp peaks in the investigated pressure region is red shifted in comparison to that for the peaks of crystalline silicon oxynitride found recently by other investigators in nitrogen-containing poly-Si as well as in a residual melt of nitrogen-doped CZ-Si. The application of the pressure during annealing results in further red shift of the nitrogen-related bands. The observed decrease of frequency of vibrational bands is explained in terms of the pressure induced lowered incorporation of oxygen into growing oxynitride phase. Secondary ion mass spectrometry data reveal the decrease of oxygen content in implanted layer with increasing pressure during annealing.

Investigations into B-O defect formation-dissociation in CZ-silicon and their effect on solar cell performance

NASA Astrophysics Data System (ADS)

Basnyat, Prakash M.

About 30% of the total market share of industrial manufacture of silicon solar cells is taken by single crystalline Czochralski (CZ) grown wafers. The efficiency of solar cells fabricated on boron-doped Czochralski silicon degrades due to the formation of metastable defects when excess electrons are created by illumination or minority carrier injection during forward bias. The recombination path can be removed by annealing the cell at about 200° C but recombination returns on exposure to light. Several mono-crystalline and multi-crystalline solar cells have been characterized by methods such as laser beam induced current (LBIC), Four-Probe electrical resistivity etc. to better understand the light induced degradation (LID) effect in silicon solar cells. All the measurements are performed as a function of light soaking time. Annealed states are produced by exposing the cells/wafer to temperature above 200° C for 30 minutes and light soaked state was produced by exposure to 1000 W/m2 light using AM1.5 solar simulator for 72 hours. Dark I-V data are analyzed by a software developed at NREL. This study shows that LID, typically, has two components- a bulk component that arises from boron-oxygen defects and a surface component that appears to be due to the SiNx:H-Si interface. With the analysis of dark saturation current (J02), it is seen that the surface LID increases with an increase in the q/2kT component. Results show that cell performance due to bulk effect is fully recovered upon annealing where as surface LID does not recover fully. This statement is also verified by the study of mc- silicon solar cells. Multi-crystalline silicon solar cell has very low oxygen content and, therefore, recombination sites will not be able to form. This shows that there is no bulk degradation in mc- Si solar cells but they exhibit surface degradation. The results suggest that a typical Cz-silicon solar cell with an initial efficiency of ˜18% could suffer a reduction in efficiency to ˜ 17.5% after the formation of a metastable defect, out of which ˜ 0.4% comes from a bulk effect and ˜0.1% is linked to a surface effect.

Potential productivity benefits of float-zone versus Czochralski crystal growth

NASA Technical Reports Server (NTRS)

Abe, T.

1985-01-01

Efficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation.

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

NASA Technical Reports Server (NTRS)

Fonash, S. J.; Sigh, R.; Mu, H. C.

1986-01-01

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Formation of copper precipitates in silicon

NASA Astrophysics Data System (ADS)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

A first-principle model of 300 mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate

NASA Astrophysics Data System (ADS)

Zheng, Zhongchao; Seto, Tatsuru; Kim, Sanghong; Kano, Manabu; Fujiwara, Toshiyuki; Mizuta, Masahiko; Hasebe, Shinji

2018-06-01

The Czochralski (CZ) process is the dominant method for manufacturing large cylindrical single-crystal ingots for the electronics industry. Although many models and control methods for the CZ process have been proposed, they were only tested with small equipment and only a few industrial application were reported. In this research, we constructed a first-principle model for controlling industrial CZ processes that produce 300 mm single-crystal silicon ingots. The developed model, which consists of energy, mass balance, hydrodynamic, and geometrical equations, calculates the crystal radius and the crystal growth rate as output variables by using the heater input, the crystal pulling rate, and the crucible rise rate as input variables. To improve accuracy, we modeled the CZ process by considering factors such as changes in the positions of the crucible and the melt level. The model was validated with the operation data from an industrial 300 mm CZ process. We compared the calculated and actual values of the crystal radius and the crystal growth rate, and the results demonstrated that the developed model simulated the industrial process with high accuracy.

Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth

NASA Astrophysics Data System (ADS)

Daggolu, Parthiv; Ryu, Jae Woo; Galyukov, Alex; Kondratyev, Alexey

2016-10-01

With the use of 300 mm silicon wafers for industrial semiconductor device manufacturing, the Czochralski (Cz) crystal growth process has to be optimized to achieve higher quality and productivity. Numerical studies based on 2D global thermal models combined with 3D simulation of melt convection are widely used today to save time and money in the process development. Melt convection in large scale Cz Si growth is controlled by a CUSP or transversal magnetic field (MF) to suppress the melt turbulence. MF can be optimized to meet necessary characteristics of the growing crystal, in terms of point defects, as MF affects the melt/crystal interface geometry and allows adjustment of the pulling rate. Among the different knobs associated with the CUSP magnetic field, the nature of its configuration, going from symmetric to asymmetric, is also reported to be an important tool for the control of crystallization front. Using a 3D unsteady model of the CGSim software, we have studied these effects and compared with several experimental results. In addition, physical mechanisms behind these observations are explored through a detailed modeling analysis of the effect of an asymmetric CUSP MF on convection features governing the heat transport in the silicon melt.

76 FR 78313 - Crystalline Silicon Photovoltaic Cells and Modules From China

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-16

...)] Crystalline Silicon Photovoltaic Cells and Modules From China Determinations On the basis of the record \\1... injured by reason of imports from China of crystalline silicon photovoltaic cells and modules, provided... imports of crystalline silicon photovoltaic cells and modules from China. Accordingly, effective October...

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

PubMed

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Twelve testable hypotheses on the geobiology of weathering

Treesearch

S.L. Brantley; J.P. Megonigal; F.N. Scatena; Z. Balogh-Brunstad; R.T. Barnes; M.A. Bruns; P. van Cappelen; K. Dontsova; H.E. Hartnett; A.S. Hartshorn; A. Heimsath; E. Herndon; L. Jin; C.K. Keller; J.R. Leake; W.H. McDowell; F.C. Meinzer; T.J. Mozdzer; S. Petsch; J. Pett-Ridge; K.S. Pretziger; P.A. Raymond; C.S. Riebe; K. Shumaker; A. Sutton-Grier; R. Walter; K. Yoo

2011-01-01

Critical Zone (CZ) research investigates the chemical, physical, and biological processes that modulate the Earth's surface. Here, we advance 12 hypotheses that must be tested to improve our understanding of the CZ: (1) Solar-to-chemical conversion of energy by plants regulates flows of carbon, water, and nutrients through plant-microbe soil networks, thereby...

Non-contact defect diagnostics in Cz-Si wafers using resonance ultrasonic vibrations

NASA Astrophysics Data System (ADS)

Belyaev, A.; Kochelap, V. A.; Tarasov, I.; Ostapenko, S.

2001-01-01

A new resonance effect of generation of sub-harmonic acoustic vibrations was applied to characterize defects in as-grown and processed Cz-Si wafers. Ultrasonic vibrations were generated into standard 8″ wafers using an external ultrasonic transducer and their amplitude recorded in a non-contact mode using a scanning acoustic probe. By tuning the frequency, f, of the transducer we observed generation of intense sub-harmonic acoustic mode ("whistle" or w-mode) with f/2 frequency. The characteristics of the w-mode-amplitude dependence, frequency scans, spatial distribution allow a clear distinction versus harmonic vibrations of the same wafer. The origin of sub-harmonic vibrations observed on 8″ Cz-Si wafers is attributed to a parametric resonance of flexural vibrations in thin silicon circular plates. We present evidence that "whistle" effect shows a strong dependence on the wafer's growth and processing history and can be used for quality assurance purposes.

Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

NASA Astrophysics Data System (ADS)

Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

2018-02-01

Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

77 FR 72884 - Crystalline Silicon Photovoltaic Cells and Modules From China

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-06

... Silicon Photovoltaic Cells and Modules From China Determinations On the basis of the record \\1\\ developed... imports of crystalline silicon photovoltaic cells and modules from China, provided for in subheadings 8501... silicon photovoltaic cells and modules from China. Chairman Irving A. Williamson and Commissioner Dean A...

Noncontact Measurement of Doping Profile for Bare Silicon

NASA Astrophysics Data System (ADS)

Kohno, Motohiro; Matsubara, Hideaki; Okada, Hiroshi; Hirae, Sadao; Sakai, Takamasa

1998-10-01

In this study, we evaluate the doping concentrations of bare silicon wafers by noncontact capacitance voltage (C V) measurements. The metal-air-insulator-semiconductor (MAIS) method enables the measurement of C V characteristics of silicon wafers without oxidation and electrode preparation. This method has the advantage that a doping profile close to the wafer surface can be obtained. In our experiment, epitaxial silicon wafers were used to compare the MAIS method with the conventional MIS method. The experimental results obtained from the two methods showed good agreement. Then, doping profiles of boron-doped Czochralski (CZ) wafers were measured by the MAIS method. The result indicated a significant reduction of the doping concentration near the wafer surface. This observation is attributed to the well-known deactivation of boron with atomic hydrogen which permeated the silicon bulk during the polishing process. This deactivation was recovered by annealing in air at 180°C for 120 min.

77 FR 35425 - Crystalline Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-13

... Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of Countervailing Duty... silicon photovoltaic cells and modules, provided for in subheadings 8501.31.80, 8501.61.00, 8507.20.80... photovoltaic cells, and modules, laminates, and panels, consisting of crystalline silicon photovoltaic cells...

High-Efficiency Crystalline Photovoltaics | Photovoltaic Research | NREL

Science.gov Websites

. We are key players in developing low-cost, manufacturable techniques for further increasing the also a driving force in two industry-relevant areas: low-cost III-V photovoltaic cells for 1-sun and are developing a >23%-efficiency, low-cost industrial-size cell on n-Cz wafer by 2018. Silicon

Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

NASA Technical Reports Server (NTRS)

Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

1979-01-01

A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.

PubMed

Yi, Huaxiang; Long, Qifeng; Tan, Wei; Li, Li; Wang, Xingjun; Zhou, Zhiping

2012-12-03

We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also analyzed comparatively with a lithium niobate Mach-Zehnder modulator in back-to-back transmission and long-haul transmission, respectively, and verified the negative chirp parameter of the silicon modulator through the experiment. The result of low power penalty indicates a practical application for the silicon modulator in the middle- or long-distance transmission systems.

Solar cell efficiency and high temperature processing of n-type silicon grown by the noncontact crucible method

DOE PAGES

Jensen, Mallory A.; LaSalvia, Vincenzo; Morishige, Ashley E.; ...

2016-08-01

The capital expense (capex) of conventional crystal growth methods is a barrier to sustainable growth of the photovoltaic industry. It is challenging for innovative techniques to displace conventional growth methods due the low dislocation density and high lifetime required for high efficiency devices. One promising innovation in crystal growth is the noncontact crucible method (NOC-Si), which combines aspects of Czochralski (Cz) and conventional casting. This material has the potential to satisfy the dual requirements, with capex likely between that of Cz (high capex) and multicrystalline silicon (mc-Si, low capex). In this contribution, we observe a strong dependence of solar cellmore » efficiency on ingot height, correlated with the evolution of swirl-like defects, for single crystalline n-type silicon grown by the NOC-Si method. We posit that these defects are similar to those observed in Cz, and we explore the response of NOC-Si to high temperature treatments including phosphorous diffusion gettering (PDG) and Tabula Rasa (TR). The highest lifetimes (2033 us for the top of the ingot and 342 us for the bottom of the ingot) are achieved for TR followed by a PDG process comprising a standard plateau and a low temperature anneal. Further improvements can be gained by tailoring the time-temperature profiles of each process. Lifetime analysis after the PDG process indicates the presence of a getterable impurity in the as-grown material, while analysis after TR points to the presence of oxide precipitates especially at the bottom of the ingot. Uniform lifetime degradation is observed after TR which we assign to a presently unknown defect. Lastly, future work includes additional TR processing to uncover the nature of this defect, microstructural characterization of suspected oxide precipitates, and optimization of the TR process to achieve the dual goals of high lifetime and spatial homogenization.« less

Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF

NASA Astrophysics Data System (ADS)

Iizuka, Masaya; Mukaiyama, Yuji; Demina, S. E.; Kalaev, V. V.

2017-06-01

Industrial Cz growth of Si crystal of 300 mm and higher diameter usually requires DC magnetic fields (MFs) to suppress turbulence in the melt. We present 3D unsteady analysis of melt turbulent convection in an industrial Cz system coupled with the effect of the transversal MF for different argon gas flow rates for the stage before crystal seeding. We have performed detailed 2D axisymmetric modeling of global heat transfer in the whole Cz furnace. Radiative heat fluxes obtained in 2D modeling have been used in detailed 3D steady and unsteady modeling of crystallization zone. LES method is applied as a predictive approach for modeling of turbulent flow of silicon melt. We have obtained flow structure and temperature distribution in the melt, which were different from previously reported data. We have observed a well-fixed dark spike which includes low temperature melt area on the melt free surface in MF cases. These results indicates that MF and argon flow rate conditions are important to achieve stable positioning of the dark spike on the melt free surface for optimized crystal seeding without uncontrollable meltdown and single crystal structure loss.

Effect of short wavelength illumination on the characteristic bulk diffusion length in ribbon silicon solar cells

NASA Technical Reports Server (NTRS)

Ho, C. T.; Mathias, J. D.

1981-01-01

The influence of short wavelength light on the characteristic bulk minority carrier diffusion length of the ribbon silicon photovoltaic cell has been investigated. We have measured the intensity and wavelength dependence of the diffusion length in an EFG ribbon cell, and compared it with a standard Czochralski grown silicon cell. While the various short wavelength illuminations have shown no influence on the diffusion length in the CZ cell, the diffusion lengths in the ribbon cell exhibit a strong dependence on the volume generation rate as well as on the wavelength of the superimposed lights. We have concluded that the trap-filling phenomenon at various depths in the bulk neutral region of the cell is consistent with the experimental observation.

76 FR 81914 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-29

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... investigation of crystalline silicon photovoltaic cells, whether or not assembled into modules, from the People..., 2012. \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the...

Silicon optical modulators for optical digital and analog communications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yang, Lin; Ding, Jianfeng; Zhang, Lei; Shao, Sizu

2017-02-01

Silicon photonics is considered as a promising technology to overcome the difficulties of the existing digital and analog optical communication systems, such as low integration, high cost, and high power consumption. Silicon optical modulator, as a component to transfer data from electronic domain to optical one, has attracted extensive attentions in the past decade. In this paper, we review the statuses of the silicon optical modulators for digital and analog optical communications and introduce our efforts on these topics. We analyze the relationship between the performance and the structural parameters of the silicon optical modulator and present how to optimize its performance including electro-optical bandwidth, modulation efficiency, optical bandwidth and insertion loss. The fabricated silicon optical modulator has an electro-optical bandwidth of 30 GHz. Its extinction ratios are 14.0 dB, 11.2 dB and 9.0 dB at the speeds of 40 Gbps, 50 Gbps and 64 Gbps for OOK modulation. The high extinction ratio of the silicon optical modulator at the high speed makes it very appropriate for the application of optical coherent modulation, such as QPSK and 16-QAM. The fabricated silicon optical modulator also can be utilized for analog optical communication. With respect to a noise floor of -165 dBc, the dynamic ranges for the second-order harmonic and the third-order intermodulation distortion are 90.8 dB and 110.5 dB respectively. By adopting a differential driving structure, the dynamic range for the second-order harmonic can be further improved to 100.0 dB while the third-order intermodulation distortion remains the same level.

Silicon Modulators, Switches and Sub-systems for Optical Interconnect

NASA Astrophysics Data System (ADS)

Li, Qi

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

NASA Astrophysics Data System (ADS)

Schmidt, Jan; Cuevas, Andrés

1999-09-01

In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1-31 Ω cm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance method, allowing carrier lifetime measurements over a very broad injection range between 1012 and 1017cm-3. To eliminate all recombination channels not related to the degradation effect, the difference of the inverse lifetimes measured after and before light degradation is evaluated. A detailed analysis of the injection level dependence of the carrier lifetime change using the Shockley-Read-Hall theory shows that the fundamental recombination center created during illumination has an energy level between Ev+0.35 and Ec-0.45 eV and an electron/hole capture time constant ratio between 0.1 and 0.2. This deep-level center is observed in all samples and is attributed to a new type of boron-oxygen complex. Besides this fundamental defect, in some samples an additional shallow-level recombination center at 0.15 eV below Ec or above Ev is found to be activated during light exposure. This second center dominates the light-degraded carrier lifetime only under high-injection conditions and is hence only of minor importance for low-injection operated devices.

The influence of flash lamp annealing on the minority carrier lifetime of Czochralski silicon wafers

NASA Astrophysics Data System (ADS)

Kissinger, G.; Kot, D.; Sattler, A.

2014-02-01

Flash lamp annealing of moderately B-doped CZ silicon wafers for 20 ms with a normalized irradiance of about 0.9 was used to efficiently suppress oxygen precipitation during subsequent thermal processing. In this way, the minority carrier lifetime measured at high injection level by microwave-detected photo-conductance decay (μ-PCD) was increased from about 30 microseconds to about 300 microseconds after a thermal process consisting of 780 °C 3 h + 1000 °C 16 h. The grown-in oxide precipitate nuclei were shrunken to a subcritical size during the flash lamp anneal which prevents further growth during subsequent thermal processing.

77 FR 4764 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-31

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Second... preliminary determination of the countervailing duty investigation of crystalline silicon photovoltaic cells... February 13, 2012.\\1\\ \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules...

Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

NASA Astrophysics Data System (ADS)

Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

2018-05-01

An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

Seventh workshop on the role of impurities and defects in silicon device processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1997-08-01

This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

77 FR 10478 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-22

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... determination in the countervailing duty investigation of crystalline silicon photovoltaic cells, whether or not... Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of...

Superdiffusion of Carbon by Vacancies Irradiated with Soft X-Rays in CZ Silicon / Superdifūzija Ar Vakancēm Iestarota Ar Mīkstajiem Rentgenstariem CZ Silīcijā

NASA Astrophysics Data System (ADS)

Janavičius, A. J.; Mekys, A.; Purlys, R.; Norgėla, Ž.; Daugėla, S.; Rinkūnas, R.

2015-10-01

The soft X-ray photons absorbed in the inner K, L, M shells of Si atoms produce photoelectrons and Auger electrons, thus generating vacancies, interstitials and metastable oxygen complexes. The samples of Czochralski silicon crystals covered with 0.1 μm thickness layer of carbon have been irradiated by X-rays using different voltages of Cu anode of the Russian diffractometer DRON-3M. The influence of X-rays on the formation of point defects and vacancy complexes, and their dynamics in Cz-Si crystals have been studied by infrared absorption. We have measured and calculated dynamics of concentration of carbon and interstitial oxygen using FTIR spectroscopy at room temperature after irradiation by soft X-rays. Using transmittance measurements and nonlinear diffusion theory we have calculated densities increasing for substitutional carbon and interstitial oxygen by reactions and very fast diffusion. The superdiffusion coefficients of carbon in silicon at room temperature generated by X-rays are about hundred thousand times greater than diffusion coefficients obtained for thermodiffusion. Rezumējums: Rentgena staru fotoni, absorbēti Si atoma iekšējos slāņos, izstaro fotoelektronus un Ožē elektronus, ģenerējot vakances, starpmezglu silīcija atomus, vakanču un skābekļa kompleksus. Čohraļska silīcija kristāli, kas pārklāti ar oglekli 0.1 μm biezuma kārtā, tika apstaroti ar rentgena stariem, izmantojot krievu difraktometru DRON-3M. Oglekļa un skābekļa difūzija un koncentrāciju izmaiņa silīcijā tika izmērīta izmantojot infrasarkano staru FTIR spektroskopiju. Rentgena staru ģenerētās ļoti ātrās oglekļa difūzijas vai superdifūzijas koeficients istabas temperatūrā silīcijā ir simtiem tūkstošu reižu lielāks nekā termodifūzijas gadījumā.

Highly linear ring modulator from hybrid silicon and lithium niobate.

PubMed

Chen, Li; Chen, Jiahong; Nagy, Jonathan; Reano, Ronald M

2015-05-18

We present a highly linear ring modulator from the bonding of ion-sliced x-cut lithium niobate onto a silicon ring resonator. The third order intermodulation distortion spurious free dynamic range is measured to be 98.1 dB Hz(2/3) and 87.6 dB Hz(2/3) at 1 GHz and 10 GHz, respectively. The linearity is comparable to a reference lithium niobate Mach-Zehnder interferometer modulator operating at quadrature and over an order of magnitude greater than silicon ring modulators based on plasma dispersion effect. Compact modulators for analog optical links that exploit the second order susceptibility of lithium niobate on the silicon platform are envisioned.

Performance study of double SOI image sensors

NASA Astrophysics Data System (ADS)

Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

2018-02-01

Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

Cellular dislocations patterns in monolike silicon: Influence of stress, time under stress and impurity doping

NASA Astrophysics Data System (ADS)

Oliveira, V. A.; Rocha, M.; Lantreibecq, A.; Tsoutsouva, M. G.; Tran-Thi, T. N.; Baruchel, J.; Camel, D.

2018-05-01

Besides the well-known local sub-grain boundaries (SGBs) defects, monolike Si ingots grown by Directional Solidification present distributed background cellular dislocation structures. In the present work, the influence of stress level, time under stress, and doping by O and Ge, on the formation of dislocation cells in monolike silicon, is analysed. This is achieved by performing a comparative study of the dislocation structures respectively obtained during crystallisation of pilot scale monolike ingots on Czochralski (CZ) and monolike seeds, during annealing of Float Zone (FZ), CZ, and 1 × 1020 at/cm3 Ge-doped CZ (GCZ) samples, and during 4-point bending of FZ and GCZ samples at 1300 °C under resolved stresses of 0.3, 0.7 and 1.9 MPa during 1-20 h. Synchrotron X-ray White-beam Topography and Rocking Curve Imaging (RCI) are applied to visualize the dislocation arrangements and to quantify the spatial distribution of the associated lattice distortions. Annealed samples and samples bent under 0.3 MPa present dislocation structures corresponding to transient creep stages where dislocations generated from surface defects are propagating and multiplying in the bulk. The addition of the hardening element Ge is found to block the propagation of dislocations from these surface sources during the annealing test, and to retard dislocation multiplication during bending under 0.3 MPa. On the opposite, cellular structures corresponding to the final stationary creep stage are obtained both in the non-molten seeds and grown part of monolike ingots and in samples bent under 0.7 and 1.9 MPa. A comparative discussion is made of the dynamics of formation of these final dislocation structures during deformation at high temperature and monolike growth.

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

NASA Technical Reports Server (NTRS)

Spitzer, M. B.

1983-01-01

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

NASA Astrophysics Data System (ADS)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Flip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver.

PubMed

Yong, Zheng; Shopov, Stefan; Mikkelsen, Jared C; Mallard, Robert; Mak, Jason C C; Voinigescu, Sorin P; Poon, Joyce K S

2017-03-20

We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at -1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 V_pp to enable a high dynamic extinction ratio and a low device insertion loss. At 44 Gbps, the transmitter achieved a high extinction ratio of 6.4 dB at the modulator quadrature operation point. This result shows open eye diagrams at the highest bit rates and with the largest extinction ratios for silicon electro-optic transmitter using a CMOS driver.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

Silicon photonic Mach Zehnder modulators for next-generation short-reach optical communication networks

NASA Astrophysics Data System (ADS)

Lacava, C.; Liu, Z.; Thomson, D.; Ke, Li; Fedeli, J. M.; Richardson, D. J.; Reed, G. T.; Petropoulos, P.

2016-02-01

Communication traffic grows relentlessly in today's networks, and with ever more machines connected to the network, this trend is set to continue for the foreseeable future. It is widely accepted that increasingly faster communications are required at the point of the end users, and consequently optical transmission plays a progressively greater role even in short- and medium-reach networks. Silicon photonic technologies are becoming increasingly attractive for such networks, due to their potential for low cost, energetically efficient, high-speed optical components. A representative example is the silicon-based optical modulator, which has been actively studied. Researchers have demonstrated silicon modulators in different types of structures, such as ring resonators or slow light based devices. These approaches have shown remarkably good performance in terms of modulation efficiency, however their operation could be severely affected by temperature drifts or fabrication errors. Mach-Zehnder modulators (MZM), on the other hand, show good performance and resilience to different environmental conditions. In this paper we present a CMOS-compatible compact silicon MZM. We study the application of the modulator to short-reach interconnects by realizing data modulation using some relevant advanced modulation formats, such as 4-level Pulse Amplitude Modulation (PAM-4) and Discrete Multi-Tone (DMT) modulation and compare the performance of the different systems in transmission.

Graphene optical modulator

NASA Astrophysics Data System (ADS)

Liu, Ming; Yin, Xiaobo; Wang, Feng; Zhang, Xiang

2011-10-01

Data communications have been growing at a speed even faster than Moore's Law, with a 44-fold increase expected within the next 10 years. Data Transfer on such scale would have to recruit optical communication technology and inspire new designs of light sources, modulators, and photodetectors. An ideal optical modulator will require high modulation speed, small device footprint and large operating bandwidth. Silicon modulators based on free carrier plasma dispersion effect and compound semiconductors utilizing direct bandgap transition have seen rapid improvement over the past decade. One of the key limitations for using silicon as modulator material is its weak refractive index change, which limits the footprint of silicon Mach-Zehnder interferometer modulators to millimeters. Other approaches such as silicon microring modulators reduce the operation wavelength range to around 100 pm and are highly sensitive to typical fabrication tolerances and temperature fluctuations. Growing large, high quality wafers of compound semiconductors, and integrating them on silicon or other substrates is expensive, which also restricts their commercialization. In this work, we demonstrate that graphene can be used as the active media for electroabsorption modulators. By tuning the Fermi energy level of the graphene layer, we induced changes in the absorption coefficient of graphene at communication wavelength and achieve a modulation depth above 3 dB. This integrated device also has the potential of working at high speed.

Micrometer size polarization independent depletion-type photonic modulator in Silicon On Insulator

NASA Astrophysics Data System (ADS)

Gardes, F. Y.; Tsakmakidis, K. L.; Thomson, D.; Reed, G. T.; Mashanovich, G. Z.; Hess, O.; Avitabile, D.

2007-04-01

The trend in silicon photonics, in the last few years has been to reduce waveguide size to obtain maximum gain in the real estate of devices as well as to increase the performance of active devices. Using different methods for the modulation, optical modulators in silicon have seen their bandwidth increased to reach multi GHz frequencies. In order to simplify fabrication, one requirement for a waveguide, as well as for a modulator, is to retain polarisation independence in any state of operation and to be as small as possible. In this paper we provide a way to obtain polarization independence and improve the efficiency of an optical modulator using a V-shaped pn junction base on the natural etch angle of silicon, 54.7 deg. This modulator is compared to a flat junction depletion type modulator of the same size and doping concentration.

Optical modulator based on silicon nanowires racetrack resonator

NASA Astrophysics Data System (ADS)

Sherif, S. M.; Shahada, L.; Swillam, M.

2018-02-01

An optical modulator based on the racetrack resonator configuration is introduced. The structure of the resonator modulator is built from silicon nanowires on silica. The cladding and voids between the silicon nanowires are filled with an electro-optic polymer. The proposed modulator is fully CMOS compatible. When the resonance is tuned to the 1.55μm wavelength, it experiences a wavelength shift upon voltage application, which is measured at the output as a change in the power level.

A Module Experimental Process System Development Unit (MEPSDU)

NASA Technical Reports Server (NTRS)

1982-01-01

Restructuring research objectives from a technical readiness demonstration program to an investigation of high risk, high payoff activities associated with producing photovoltaic modules using non-CZ sheet material is reported. Deletion of the module frame in favor of a frameless design, and modification in cell series parallel electrical interconnect configuration are reviewed. A baseline process sequence was identified for the fabrication of modules using the selected dendritic web sheet material, and economic evaluations of the sequence were completed.

Excimer laser annealing: A gold process for CZ silicon junction formation

NASA Technical Reports Server (NTRS)

Wong, David C.; Bottenberg, William R.; Byron, Stanley; Alexander, Paul

1987-01-01

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon

NASA Astrophysics Data System (ADS)

Drikis, Ivars; Plate, Matiss; Sennikovs, Juris; Virbulis, Janis

2017-09-01

Simulations of 3D anisotropic stress are carried out in <100> and <111> oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is 5-11% higher in <111> crystals compared to <100> crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the <111> crystal has a higher azimuthal variation of stress along the triple point line ( 8%) than the <100> crystal ( 2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ridge compared with the round crystal.

Texturing Silicon Nanowires for Highly Localized Optical Modulation of Cellular Dynamics.

PubMed

Fang, Yin; Jiang, Yuanwen; Acaron Ledesma, Hector; Yi, Jaeseok; Gao, Xiang; Weiss, Dara E; Shi, Fengyuan; Tian, Bozhi

2018-06-18

Engineered silicon-based materials can display photoelectric and photothermal responses under light illumination, which may lead to further innovations at the silicon-biology interfaces. Silicon nanowires have small radial dimensions, promising as highly localized cellular modulators, however the single crystalline form typically has limited photothermal efficacy due to the poor light absorption and fast heat dissipation. In this work, we report strategies to improve the photothermal response from silicon nanowires by introducing nanoscale textures on the surface and in the bulk. We next demonstrate high-resolution extracellular modulation of calcium dynamics in a number of mammalian cells including glial cells, neurons, and cancer cells. The new materials may be broadly used in probing and modulating electrical and chemical signals at the subcellular length scale, which is currently a challenge in the field of electrophysiology or cellular engineering.

Specific energy yield comparison between crystalline silicon and amorphous silicon based PV modules

NASA Astrophysics Data System (ADS)

Ferenczi, Toby; Stern, Omar; Hartung, Marianne; Mueggenburg, Eike; Lynass, Mark; Bernal, Eva; Mayer, Oliver; Zettl, Marcus

2009-08-01

As emerging thin-film PV technologies continue to penetrate the market and the number of utility scale installations substantially increase, detailed understanding of the performance of the various PV technologies becomes more important. An accurate database for each technology is essential for precise project planning, energy yield prediction and project financing. However recent publications showed that it is very difficult to get accurate and reliable performance data of theses technologies. This paper evaluates previously reported claims the amorphous silicon based PV modules have a higher annual energy yield compared to crystalline silicon modules relative to their rated performance. In order to acquire a detailed understanding of this effect, outdoor module tests were performed at GE Global Research Center in Munich. In this study we examine closely two of the five reported factors that contribute to enhanced energy yield of amorphous silicon modules. We find evidence to support each of these factors and evaluate their relative significance. We discuss aspects for improvement in how PV modules are sold and identify areas for further study further study.

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

NASA Astrophysics Data System (ADS)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator.

PubMed

Tang, Yongbo; Chen, Hui-Wen; Jain, Siddharth; Peters, Jonathan D; Westergren, Urban; Bowers, John E

2011-03-28

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

Surface property modification of silicon

NASA Technical Reports Server (NTRS)

Danyluk, S.

1984-01-01

The main emphasis of this work has been to determine the wear rate of silicon in fluid environments and the parameters that influence wear. Three tests were carried out on single crystal Czochralski silicon wafers: circular and linear multiple-scratch tests in fluids by a pyramidal diamond simulated fixed-particle abrasion; microhardness and three-point bend tests were used to determine the hardness and fracture toughness of abraded silicon and the extent of damage induced by abrasion. The wear rate of (100) and (111) n and p-type single crystal Cz silicon abraded by a pyramidal diamond in ethanol, methanol, acetone and de-ionized water was determined by measuring the cross-sectional areas of grooves of the circular and linear multiple-scratch tests. The wear rate depends on the loads on the diamond and is highest for ethanol and lowest for de-ionized water. The surface morphology of the grooves showed lateral and median cracks as well as a plastically deformed region. The hardness and fracture toughness are critical parameters that influence the wear rate. Microhardness tests were conducted to determine the hardness as influenced by fluids. Median cracks and the damage zone surrounding the indentations were also related to the fluid properties.

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats.

PubMed

Lauermann, M; Palmer, R; Koeber, S; Schindler, P C; Korn, D; Wahlbrink, T; Bolten, J; Waldow, M; Elder, D L; Dalton, L R; Leuthold, J; Freude, W; Koos, C

2014-12-01

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations

NASA Astrophysics Data System (ADS)

Yamaguchi, Seira; Masuda, Atsushi; Ohdaira, Keisuke

2016-04-01

This paper deals with the dependence of the potential-induced degradation (PID) of flat, p-type mono-crystalline silicon solar cell modules on the surface orientation of solar cells. The investigated modules were fabricated from p-type mono-crystalline silicon cells with a (100) or (111) surface orientation using a module laminator. PID tests were performed by applying a voltage of -1000 V to shorted module interconnector ribbons with respect to an Al plate placed on the cover glass of the modules at 85 °C. A decrease in the parallel resistance of the (100)-oriented cell modules is more significant than that of the (111)-oriented cell modules. Hence, the performance of the (100)-oriented-cell modules drastically deteriorates, compared with that of the (111)-oriented-cell modules. This implies that (111)-oriented cells offer a higher PID resistance.

From cells to laminate: probing and modeling residual stress evolution in thin silicon photovoltaic modules using synchrotron X-ray micro-diffraction experiments and finite element simulations

DOE PAGES

Tippabhotla, Sasi Kumar; Radchenko, Ihor; Song, W. J. R.; ...

2017-04-12

Fracture of silicon crystalline solar cells has recently been observed in increasing percentages especially in solar photovoltaic (PV) modules involving thinner silicon solar cells (<200 μm). Many failures due to fracture have been reported from the field because of environmental loading (snow, wind, etc.) as well as mishandling of the solar PV modules (during installation, maintenance, etc.). However, a significantly higher number of failures have also been reported during module encapsulation (lamination) indicating high residual stress in the modules and thus more prone to cell cracking. Here in this paper we report through the use of synchrotron X-ray submicron diffractionmore » coupled with physics-based finite element modeling, the complete residual stress evolution in mono-crystalline silicon solar cells during PV module integration process. For the first time, we unravel the reason for the high stress and cracking of silicon cells near soldered inter-connects. Our experiments revealed a significant increase of residual stress in the silicon cell near the solder joint after lamination. Moreover, our finite element simulations show that this increase of stress during lamination is a result of highly localized bending of the cell near the soldered inter-connects. Further, the synchrotron X-ray submicron diffraction has proven to be a very effective way to quantitatively probe mechanical stress in encapsulated silicon solar cells. Thus, this technique has ultimately enabled these findings leading to the enlightening of the role of soldering and encapsulation processes on the cell residual stress. This model can be further used to suggest methodologies that could lead to lower stress in encapsulated silicon solar cells, which are the subjects of our continued investigations.« less

From cells to laminate: probing and modeling residual stress evolution in thin silicon photovoltaic modules using synchrotron X-ray micro-diffraction experiments and finite element simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tippabhotla, Sasi Kumar; Radchenko, Ihor; Song, W. J. R.

Fracture of silicon crystalline solar cells has recently been observed in increasing percentages especially in solar photovoltaic (PV) modules involving thinner silicon solar cells (<200 μm). Many failures due to fracture have been reported from the field because of environmental loading (snow, wind, etc.) as well as mishandling of the solar PV modules (during installation, maintenance, etc.). However, a significantly higher number of failures have also been reported during module encapsulation (lamination) indicating high residual stress in the modules and thus more prone to cell cracking. Here in this paper we report through the use of synchrotron X-ray submicron diffractionmore » coupled with physics-based finite element modeling, the complete residual stress evolution in mono-crystalline silicon solar cells during PV module integration process. For the first time, we unravel the reason for the high stress and cracking of silicon cells near soldered inter-connects. Our experiments revealed a significant increase of residual stress in the silicon cell near the solder joint after lamination. Moreover, our finite element simulations show that this increase of stress during lamination is a result of highly localized bending of the cell near the soldered inter-connects. Further, the synchrotron X-ray submicron diffraction has proven to be a very effective way to quantitatively probe mechanical stress in encapsulated silicon solar cells. Thus, this technique has ultimately enabled these findings leading to the enlightening of the role of soldering and encapsulation processes on the cell residual stress. This model can be further used to suggest methodologies that could lead to lower stress in encapsulated silicon solar cells, which are the subjects of our continued investigations.« less

Recycling WEEE: Extraction and concentration of silver from waste crystalline silicon photovoltaic modules.

PubMed

Dias, Pablo; Javimczik, Selene; Benevit, Mariana; Veit, Hugo; Bernardes, Andréa Moura

2016-11-01

Photovoltaic modules (or panels) are important power generators with limited lifespans. The modules contain known pollutants and valuable materials such as silicon, silver, copper, aluminum and glass. Thus, recycling such waste is of great importance. To date, there have been few published studies on recycling silver from silicon photovoltaic panels, even though silicon technology represents the majority of the photovoltaic market. In this study, the extraction of silver from waste modules is justified and evaluated. It is shown that the silver content in crystalline silicon photovoltaic modules reaches 600g/t. Moreover, two methods to concentrate silver from waste modules were studied, and the use of pyrolysis was evaluated. In the first method, the modules were milled, sieved and leached in 64% nitric acid solution with 99% sodium chloride; the silver concentration yield was 94%. In the second method, photovoltaic modules were milled, sieved, subjected to pyrolysis at 500°C and leached in 64% nitric acid solution with 99% sodium chloride; the silver concentration yield was 92%. The first method is preferred as it consumes less energy and presents a higher yield of silver. This study shows that the use of pyrolysis does not assist in the extraction of silver, as the yield was similar for both methods with and without pyrolysis. Copyright © 2016 Elsevier Ltd. All rights reserved.

77 FR 73017 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-07

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Countervailing... photovoltaic cells, whether or not assembled into modules (solar cells), from the People's Republic of China... material injury to a U.S. industry.\\1\\ \\1\\ See Crystalline Silicon Photovoltaic Cells and Modules from...

77 FR 14732 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-13

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Postponement of... of an antidumping duty investigation of crystalline silicon photovoltaic cells, whether or not... currently due no later than March 27, 2012. \\1\\ See Crystalline Silicon Photovoltaic Cells, Whether or Not...

77 FR 5487 - Countervailing Duty Investigation of Crystalline Silicon Photovoltaic Cells, Whether or Not...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-03

... Investigation of Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People... crystalline silicon photovoltaic cells, whether or not assembled into modules (solar cells), from the People's... exist for imports of solar cells from the PRC for Suntech, Trina, and all other producers or exporters...

Solar power roof shingle

NASA Technical Reports Server (NTRS)

Forestieri, A. F.; Ratajczak, A. F.; Sidorak, L. G.

1975-01-01

Silicon solar cell module provides both all-weather protection and electrical power. Module consists of array of circular silicon solar cells bonded to fiberglass substrate roof shingle with fluorinated ethylene propylene encapsulant.

Mechanical Modulation of Phonon-Assisted Field Emission in a Silicon Nanomembrane Detector for Time-of-Flight Mass Spectrometry

PubMed Central

Park, Jonghoo; Blick, Robert H.

2016-01-01

We demonstrate mechanical modulation of phonon-assisted field emission in a free-standing silicon nanomembrane detector for time-of-flight mass spectrometry of proteins. The impacts of ion bombardment on the silicon nanomembrane have been explored in both mechanical and electrical points of view. Locally elevated lattice temperature in the silicon nanomembrane, resulting from the transduction of ion kinetic energy into thermal energy through the ion bombardment, induces not only phonon-assisted field emission but also a mechanical vibration in the silicon nanomembrane. The coupling of these mechanical and electrical phenomenon leads to mechanical modulation of phonon-assisted field emission. The thermal energy relaxation through mechanical vibration in addition to the lateral heat conduction and field emission in the silicon nanomembrane offers effective cooling of the nanomembrane, thereby allowing high resolution mass analysis. PMID:26861329

Optically tuned terahertz modulator based on annealed multilayer MoS2.

PubMed

Cao, Yapeng; Gan, Sheng; Geng, Zhaoxin; Liu, Jian; Yang, Yuping; Bao, Qiaoling; Chen, Hongda

2016-03-08

Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS2-based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, P.; Terwilliger, K.; Koch, S.

Three crystalline silicon module designs were distributed in five replicas each to five laboratories for testing according to the IEC 62804 (Committee Draft) system voltage durability qualification test for crystalline silicon photovoltaic (PV) modules. The stress tests were performed in environmental chambers at 60 degrees C, 85% relative humidity, 96 h, and with module nameplate system voltage applied.

Molecular modeling and docking characterization of CzR1, a CC-NBS-LRR R-gene from Curcuma zedoaria Loeb. that confers resistance to Pythium aphanidermatum

PubMed Central

Joshi, Raj Kumar; Nanda, Satyabrata; Rout, Ellojita; Kar, Basudeba; Naik, Pradeep Kumar; Nayak, Sanghamitra

2013-01-01

Plant NBS-LRR R-genes recognizes several pathogen associated molecular patterns (PAMPs) and limit pathogen infection through a multifaceted defense response. CzR1, a coiled-coil-nucleotide-binding-site-leucine-rich repeat R-gene isolated from Curcuma zedoaria L exhibit constitutive resistance to different strains of P. aphanidermatum. Majority of the necrotrophic oomycetes are characterized by the presence of carbohydrate PAMPs β-glucans in their cell walls which intercat with R-genes. In the present study, we predicted the 3D (three dimensional) structure of CzR1 based on homology modeling using the homology module of Prime through the Maestro interface of Schrodinger package ver 2.5. The docking investigation of CzR1 with β-glucan using the Glide software suggests that six amino acid residues, Ser186, Glu187, Ser263, Asp264, Asp355 and Tyr425 act as catalytic residues and are involved in hydrogen bonding with ligand β-(1,3)-D-Glucan. The calculated distance between the carboxylic oxygen atoms of Glu187–Asp355 pair is well within the distance of 5Å suggesting a positive glucanase activity of CzR1. Elucidation of these molecular characteristics will help in in silico screening and understanding the structural basis of ligand binding to CzR1 protein and pave new ways towards a broad spectrum rhizome rot resistance development in the cultivated turmeric. PMID:23888096

Thermal stress during RTP processes and its possible effect on the light induced degradation in Cz-Si wafers

NASA Astrophysics Data System (ADS)

Kouhlane, Yacine; Bouhafs, Djoudi; Khelifati, Nabil; Guenda, Abdelkader; Demagh, Nacer-Eddine; Demagh, Assia; Pfeiffer, Pierre; Mezghiche, Salah; Hetatache, Warda; Derkaoui, Fahima; Nasraoui, Chahinez; Nwadiaru, Ogechi Vivian

2018-04-01

In this study, the carrier lifetime variation of p-type boron-doped Czochralski silicon (Cz-Si) wafers was investigated after a direct rapid thermal processing (RTP). Two wafers were passivated by silicon nitride (SiNx:H) layers, deposited by a PECVD system on both surfaces. Then the wafers were subjected to an RTP cycle at a peak temperature of 620 °C. The first wafer was protected (PW) from the direct radiative heating of the RTP furnace by placing the wafer between two as-cut Cz-Si shield wafers during the heat processing. The second wafer was not protected (NPW) and followed the same RTP cycle procedure. The carrier lifetime τ eff was measured using the QSSPC technique before and after illumination for 5 h duration at 0.5 suns. The immediate results of the measured lifetime (τ RTP ) after the RTP process have shown a regeneration in the lifetime of the two wafers with the PW wafer exhibiting an important enhancement in τ RTP as compared to the NPW wafer. The QSSPC measurements have indicated a good stable lifetime (τ d ) and a weak degradation effect was observed in the case of the PW wafer as compared to their initial lifetime value. Interferometry technique analyses have shown an enhancement in the surface roughness for the NPW wafer as compared to the protected one. Additionally, to improve the correlation between the RTP heat radiation stress and the carrier lifetime behavior, a simulation of the thermal stress and temperature profile using the finite element method on the wafers surface at RTP peak temperature of 620 °C was performed. The results confirm the reduction of the thermal stress with less heat losses for the PW wafer. Finally, the proposed method can lead to improving the lifetime of wafers by an RTP process at minimum energy costs.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Feng; Spring, Andrew M.; Sato, Hiromu

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that ofmore » the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.« less

A new approach to the CZ crystal growth weighing control

NASA Astrophysics Data System (ADS)

Kasimkin, P. V.; Moskovskih, V. A.; Vasiliev, Y. V.; Shlegel, V. N.; Yuferev, V. S.; Vasiliev, M. G.; Zhdankov, V. N.

2014-03-01

The aim of a new approach was to improve the robustness of the weighing control of CZ growth especially for semiconductors, for which the “anomalous“ behavior of the apparent weight provokes instability of the servo-loop. In the described method, the periodic reciprocating measuring motion of small amplitude is superposed on the uniform pull-rod movement. The cross-sectional area is determined from the weight sensor responses that are modulated mainly by the forces of hydrostatic pressure. By the example of germanium crystal growth, it is shown that in the control system, based on such a way of the diameter measuring, a simple PI control law provides a good close loop system's stability and dynamics for the materials with the “anomalous” behavior of a weighing signal. The effect of a meniscus on the modulation measuring of a crystal diameter is also discussed.

Chemical Bonding Technology: Direct Investigation of Interfacial Bonds

NASA Technical Reports Server (NTRS)

Koenig, J. L.; Boerio, F. J.; Plueddemann, E. P.; Miller, J.; Willis, P. B.; Cuddihy, E. F.

1986-01-01

This is the third Flat-Plate Solar Array (FSA) Project document reporting on chemical bonding technology for terrestrial photovoltaic (PV) modules. The impetus for this work originated in the late 1970s when PV modules employing silicone encapsulation materials were undergoing delamination during outdoor exposure. At that time, manufacturers were not employing adhesion promoters and, hence, module interfaces in common with the silicone materials were only in physical contact and therefore easily prone to separation if, for example, water were to penetrate to the interfaces. Delamination with silicone materials virtually vanished when adhesion promoters, recommended by silicone manufacturers, were used. The activities related to the direct investigation of chemically bonded interfaces are described.

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1979-01-01

The energy consumed in manufacturing silicon solar cell modules was calculated for the current process, as well as for 1982 and 1986 projected processes. In addition, energy payback times for the above three sequences are shown. The module manufacturing energy was partitioned two ways. In one way, the silicon reduction, silicon purification, sheet formation, cell fabrication, and encapsulation energies were found. In addition, the facility, equipment, processing material and direct material lost-in-process energies were appropriated in junction formation processes and full module manufacturing sequences. A brief methodology accounting for the energy of silicon wafers lost-in-processing during cell manufacturing is described.

Using carrier-depletion silicon modulators for optical power monitoring.

PubMed

Yu, Hui; Korn, Dietmar; Pantouvaki, Marianna; Van Campenhout, Joris; Komorowska, Katarzyna; Verheyen, Peter; Lepage, Guy; Absil, Philippe; Hillerkuss, David; Alloatti, Luca; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-11-15

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inglese, Alessandro, E-mail: alessandro.inglese@aalto.fi; Savin, Hele; Lindroos, Jeanette

Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in lowmore » resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.« less

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Heterogeneously-integrated VCSEL using high-contrast grating on silicon

NASA Astrophysics Data System (ADS)

Ferrara, James; Zhu, Li; Yang, Weijian; Qiao, Pengfei; Chang-Hasnain, Connie J.

2015-02-01

We present a unique heterogeneous integration approach for VCSELs on silicon using eutectic bonding. An electrically pumped III-V - silicon heterogeneous VCSEL is demonstrated using a high-contrast grating (HCG) reflector on silicon. CW output power >1.5 mW, thermal resistance of 1.46 K/mW, and 5 Gb/s direct modulation is demonstrated. We also explore the possibility of an all-HCG VCSEL structure that would benefit from stronger thermal performance, larger tuning efficiency, and higher direct modulation speeds.

Ground-state splitting of ultrashallow thermal donors with negative central-cell corrections in silicon

NASA Astrophysics Data System (ADS)

Hara, Akito; Awano, Teruyoshi

2017-06-01

Ultrashallow thermal donors (USTDs), which consist of light element impurities such as carbon, hydrogen, and oxygen, have been found in Czochralski silicon (CZ Si) crystals. To the best of our knowledge, these are the shallowest hydrogen-like donors with negative central-cell corrections in Si. We observed the ground-state splitting of USTDs by far-infrared optical absorption at different temperatures. The upper ground-state levels are approximately 4 meV higher than the ground-state levels. This energy level splitting is also consistent with that obtained by thermal excitation from the ground state to the upper ground state. This is direct evidence that the wave function of the USTD ground state is made up of a linear combination of conduction band minimums.

Integral bypass diodes in an amorphous silicon alloy photovoltaic module

NASA Technical Reports Server (NTRS)

Hanak, J. J.; Flaisher, H.

1991-01-01

Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp.

PubMed

Chen, Hui-Wen; Peters, Jonathan D; Bowers, John E

2011-01-17

We demonstrate a hybrid silicon modulator operating up to 40 Gb/s with 11.4 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm and chirp of -0.75 over the entire bias range. As a switch, it has a switching time less than 20 ps.

77 FR 37877 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-25

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Preliminary... crystalline silicon photovoltaic cells, whether or not assembled into modules (``solar cells''), from the... names of these companies in the table in the ``Preliminary Determination'' section in the solar cells...

Integrated Thermal Modules for Cooling Silicon and Silicon Carbide Power Modules

DTIC Science & Technology

2007-06-11

analyses, bench tests, and motor tests comprise the program. The ITMs, in place of standard heatsinks, use a highly conductive pyrolytic graphite to...passively cool power modules. Initial results show that even simple ITMs can lower chip temperatures by 20 deg. C and 10 deg. C with engine oil and

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2014-04-30

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects

NASA Astrophysics Data System (ADS)

Beckett, Douglas J. S.; Hickey, Ryan; Logan, Dylan F.; Knights, Andrew P.; Chen, Rong; Cao, Bin; Wheeldon, Jeffery F.

2018-02-01

Quantum dot comb sources integrated with silicon photonic ring-resonator filters and modulators enable the realization of optical sub-components and modules for both inter- and intra-data-center applications. Low-noise, multi-wavelength, single-chip, laser sources, PAM4 modulation and direct detection allow a practical, scalable, architecture for applications beyond 400 Gb/s. Multi-wavelength, single-chip light sources are essential for reducing power dissipation, space and cost, while silicon photonic ring resonators offer high-performance with space and power efficiency.

Hybrid metasurface for ultra-broadband terahertz modulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heyes, Jane E.; Withayachumnankul, Withawat; Grady, Nathaniel K.

2014-11-05

We demonstrate an ultra-broadband free-space terahertz modulator based on a semiconductor-integrated metasurface. The modulator is made of a planar array of metal cut-wires on a silicon-on-sapphire substrate, where the silicon layer functions as photoconductive switches. Without external excitation, the cut-wire array exhibits a Lorentzian resonant response with a transmission passband spanning dc up to the fundamental dipole resonance above 2 THz. Under photoexcitation with 1.55 eV near-infrared light, the silicon regions in the cut-wire gaps become highly conductive, causing a transition of the resonant metasurface to a wire grating with a Drude response. In effect, the low-frequency passband below 2more » THz evolves into a stopband for the incident terahertz waves. Experimental validations confirm a bandwidth of at least 100%, spanning 0.5 to 1.5 THz with -10 dB modulation depth. This modulation depth is far superior to -5 dB achievable from a plain silicon-on-sapphire substrate with effectively 25 times higher pumping energy. The proposed concept of ultra-broadband metasurface modulator can be readily extended to electrically controlled terahertz wave modulation.« less

Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

PubMed Central

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed. PMID:24459433

Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

PubMed

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

Ultrasensitive Silicon Photonic-Crystal Nanobeam Electro-Optical Modulator (Preprint)

DTIC Science & Technology

2013-10-01

and simulation results are presented for an ultralow switching energy, resonator based silicon-on-insulator (SOI) electro-optical modulator. The...joshua.hendrickson@wpafb.af.mil Abstract: Design and simulation results are presented for an ultralow switching energy, resonator based silicon-on...S. Fegadolli, J. E. B. Oliveira, V. R. Almeida, and A. Scherer, “Compact and low power consumption tunable photonic crystal nanobeam cavity,” 21

77 FR 25400 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-30

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Alignment of... crystalline silicon photovoltaic cells, whether or not assembled into modules (solar cells) from the People's... Department initiated the AD and CVD investigations of solar cells from the PRC.\\1\\ On March 26, 2012, the...

Fatigue degradation and electric recovery in Silicon solar cells embedded in photovoltaic modules

PubMed Central

Paggi, Marco; Berardone, Irene; Infuso, Andrea; Corrado, Mauro

2014-01-01

Cracking in Silicon solar cells is an important factor for the electrical power-loss of photovoltaic modules. Simple geometrical criteria identifying the amount of inactive cell areas depending on the position of cracks with respect to the main electric conductors have been proposed in the literature to predict worst case scenarios. Here we present an experimental study based on the electroluminescence (EL) technique showing that crack propagation in monocrystalline Silicon cells embedded in photovoltaic (PV) modules is a much more complex phenomenon. In spite of the very brittle nature of Silicon, due to the action of the encapsulating polymer and residual thermo-elastic stresses, cracked regions can recover the electric conductivity during mechanical unloading due to crack closure. During cyclic bending, fatigue degradation is reported. This pinpoints the importance of reducing cyclic stresses caused by vibrations due to transportation and use, in order to limit the effect of cracking in Silicon cells. PMID:24675974

Generation of tunable, high repetition rate optical frequency combs using on-chip silicon modulators

NASA Astrophysics Data System (ADS)

Nagarjun, K. P.; Jeyaselvan, Vadivukarassi; Selvaraja, Shankar Kumar; Supradeepa, V. R.

2018-04-01

We experimentally demonstrate tunable, highly-stable frequency combs with high repetition-rates using a single, charge injection based silicon PN modulator. In this work, we demonstrate combs in the C-band with over 8 lines in a 20-dB bandwidth. We demonstrate continuous tuning of the center frequency in the C-band and tuning of the repetition-rate from 7.5GHz to 12.5GHz. We also demonstrate through simulations the potential for bandwidth scaling using an optimized silicon PIN modulator. We find that, the time varying free carrier absorption due to carrier injection, an undesirable effect in data modulators, assists here in enhancing flatness in the generated combs.

Thermal conductivity engineering in width-modulated silicon nanowires and thermoelectric efficiency enhancement

NASA Astrophysics Data System (ADS)

Zianni, Xanthippi

2018-03-01

Width-modulated nanowires have been proposed as efficient thermoelectric materials. Here, the electron and phonon transport properties and the thermoelectric efficiency are discussed for dimensions above the quantum confinement regime. The thermal conductivity decreases dramatically in the presence of thin constrictions due to their ballistic thermal resistance. It shows a scaling behavior upon the width-modulation rate that allows for thermal conductivity engineering. The electron conductivity also decreases due to enhanced boundary scattering by the constrictions. The effect of boundary scattering is weaker for electrons than for phonons and the overall thermoelectric efficiency is enhanced. A ZT enhancement by a factor of 20-30 is predicted for width-modulated nanowires compared to bulk silicon. Our findings indicate that width-modulated nanostructures are promising for developing silicon nanostructures with high thermoelectric efficiency.

Evaluation of cleaners for photovoltaic modules exposed in an outdoor environment

NASA Technical Reports Server (NTRS)

Knapp, W. D.

1979-01-01

Power recovery of silicone encapsulated and glass covered photovoltaic modules, exposed for two years to a suburban environment, was measured after washing with a variety of cleaners including detergents, abrasive soap, and hydrocarbon solvents. Silicone encapsulated modules in operating environments may experience significant power losses or require extensive periodic cleaning. Glass front-faced modules in similar situations are much less affected. Organic hydrocarbon solvents or abrasives were found to be about five times more effective than mild detergents in cleaning encapsulated modules.

Conditions for optimal efficiency of PCBM-based terahertz modulators

NASA Astrophysics Data System (ADS)

Yoo, Hyung Keun; Lee, Hanju; Lee, Kiejin; Kang, Chul; Kee, Chul-Sik; Hwang, In-Wook; Lee, Joong Wook

2017-10-01

We demonstrate the conditions for optimal modulation efficiency of active terahertz modulators based on phenyl-C61-butyric acid methyl ester (PCBM)-silicon hybrid structures. Highly efficient active control of the terahertz wave modulation was realized by controlling organic film thickness, annealing temperature, and laser excitation wavelength. Under the optimal conditions, the modulation efficiency reached nearly 100%. Charge distributions measured with a near-field scanning microwave microscanning technique corroborated the fact that the increase of photo-excited carriers due to the PCBM-silicon hybrid structure enables the enhancement of active modulation efficiency.

In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements

DOE PAGES

Luo, Wei; Hacke, Peter; Singh, Jai Prakash; ...

2016-11-14

Here, a temperature correction methodology for in-situ dark I-V(DIV) characterization of conventional p-type crystalline silicon photovoltaic (PV) modules undergoing potential-induced degradation (PID) is proposed.

Carbon and water, the energy for weathering and chemical denudation

NASA Astrophysics Data System (ADS)

Perdrial, J. N.; Rasmussen, C.; McIntosh, J. C.; Zapata, X.; Harpold, A. A.; Vazquez, A.; Porter, C. M.; Brooks, P. D.; Meixner, T.; Mitra, B.; Troch, P. A.; Chorover, J.

2012-12-01

Development of predictive relations between climatic forcing and geochemical weathering is a priority for Critical Zone (CZ) research. We postulate that quantification of climatic drivers, by their integration into a single currency that accounts for energy associated with water and carbon fluxes, is predictive of catchment solute loss associated with incongruent landscape dissolution (i.e. chemical denudation). This hypothesis was tested using meteorological data incorporated into a model of effective energy and mass transfer (EEMT, kJ -2 y-1,[1]) to determine if EEMT is a useful predictor of chemical denudation observed at different scales of CZ observation (pedon to watershed). Water, carbon and lithogenic element flux data were collected from several snow-dominated forested mountain catchments underlain by rhyolite in the Santa Catalina Mountains - Jemez River Basin (SCM-JRB) CZ Observatory during the years 2010-2012. Annual catchment scale fluxes for major and trace lithogenic elements (Na, Mg, Si, Ca and lanthanides a.k.a. REE) are positively correlated (r2 between 0.6 and 0.9) with annual EEMT values (i.e., CZ inputs of energy associated with carbon and water). Both differences in climatic conditions as well as catchment characteristics (i.e. aspect) modulate the magnitude of EEMT and, corresponding chemical denudation. Furthermore, CZ EEMT store (EEMTin - EEMTout), the energy available for weathering, shows likewise positive correlations with the loss of lithogenic elements, confirming that CZ water and carbon fluxes can be used to predict chemical denudation.[1] Rasmussen et al. (2010). An open system framework for integrating critical zone structure and function. Biogeochemistry. 102, 15-29.

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

PubMed

Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

2014-12-14

Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

A holistic view of crystalline silicon module reliability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanoka, J.I.

1995-11-01

Several aspects of module reliability are discussed, particularly with reference to the encapsulant and its interaction with the metallization and interconnection of a module. A need to look at the module as a whole single unit is stressed. Also, the issue of a slight light degradation effect in crystalline silicon cells is discussed. A model for this is mentioned and it may well be that polycrystalline cells with dislocations may have an advantage.

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

DOE PAGES

Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; ...

2015-08-20

In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge 23Sb 7S 70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10 5 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scalemore » dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, Ashutosh; Patil, Aniket; Chiles, Jeff

In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge 23Sb 7S 70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10 5 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scalemore » dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less

Beam test of CSES silicon strip detector module

NASA Astrophysics Data System (ADS)

Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

2017-05-01

The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

The Status and Outlook for the Photovoltaics Industry

NASA Astrophysics Data System (ADS)

Carlson, David

2006-03-01

The first silicon solar cell was made at Bell Labs in 1954, and over the following decades, shipments of photovoltaic (PV) modules increased at a rate of about 18% annually. In the last several years, the annual growth rate has increased to ˜ 35% due largely to government-supported programs in Japan and Germany. Silicon technology has dominated the PV industry since its inception, and in 2005 about 65% of all solar cells were made from polycrystalline (or multicrystalline) silicon, 24% from monocrystalline silicon and ˜ 4% from ribbon silicon. While conversion efficiencies as high as 24.7% have been obtained in the laboratory for silicon solar cells, the best efficiencies for commercial PV modules are in the range of 17 18% (the efficiency limit for a silicon solar cell is ˜ 29%). A number of companies are commercializing solar cells based on other materials such as amorphous silicon, microcrystalline silicon, cadmium telluride, copper-indium-gallium-diselenide (CIGS), gallium arsenide (and related compounds) and dye- sensitized titanium oxide. Thin film CIGS solar cells have been fabricated with conversion efficiencies as high as 19.5% while efficiencies as high as 39% have been demonstrated for a GaInP/Ga(In)As/Ge triple-junction cell operating at a concentration of 236 suns. Thin film solar cells are being used in consumer products and in some building-integrated applications, while PV concentrator systems are being tested in grid-connected arrays located in high solar insolation areas. Nonetheless, crystalline silicon PV technology is likely to dominate the terrestrial market for at least the next decade with module efficiencies > 20% and module prices of < 1/Wp expected by 2020, which in turn should allow significant penetration of the utility grid market. However, crystalline silicon solar cells may be challenged in the next decade or two by new low-cost, high performance devices based on organic materials and nanotechnology.

LCoS-SLM technology based on Digital Electro-optics Platform and using in dynamic optics for application development

NASA Astrophysics Data System (ADS)

Tsai, Chun-Wei; Wang, Chen; Lyu, Bo-Han; Chu, Chen-Hsien

2017-08-01

Digital Electro-optics Platform is the main concept of Jasper Display Corp. (JDC) to develop various applications. These applications are based on our X-on-Silicon technologies, for example, X-on-Silicon technologies could be used on Liquid Crystal on Silicon (LCoS), Micro Light-Emitting Diode on Silicon (μLEDoS), Organic Light-Emitting Diode on Silicon (OLEDoS), and Cell on Silicon (CELLoS), etc. LCoS technology is applied to Spatial Light Modulator (SLM), Dynamic Optics, Wavelength Selective Switch (WSS), Holographic Display, Microscopy, Bio-tech, 3D Printing and Adaptive Optics, etc. In addition, μLEDoS technology is applied to Augmented Reality (AR), Head Up Display (HUD), Head-mounted Display (HMD), and Wearable Devices. Liquid Crystal on Silicon - Spatial Light Modulator (LCoSSLM) based on JDC's On-Silicon technology for both amplitude and phase modulation, have an expanding role in several optical areas where light control on a pixel-by-pixel basis is critical for optimum system performance. Combination of the advantage of hardware and software, we can establish a "dynamic optics" for the above applications or more. Moreover, through the software operation, we can control the light more flexible and easily as programmable light processor.

Graphene-silicon phase modulators with gigahertz bandwidth

NASA Astrophysics Data System (ADS)

Sorianello, V.; Midrio, M.; Contestabile, G.; Asselberghs, I.; Van Campenhout, J.; Huyghebaert, C.; Goykhman, I.; Ott, A. K.; Ferrari, A. C.; Romagnoli, M.

2018-01-01

The modulator is a key component in optical communications. Several graphene-based amplitude modulators have been reported based on electro-absorption. However, graphene phase modulators (GPMs) are necessary for functions such as applying complex modulation formats or making switches or phased arrays. Here, we present a 10 Gb s-1 GPM integrated in a Mach-Zehnder interferometer configuration. This is a compact device based on a graphene-insulator-silicon capacitor, with a phase-shifter length of 300 μm and extinction ratio of 35 dB. The GPM has a modulation efficiency of 0.28 V cm at 1,550 nm. It has 5 GHz electro-optical bandwidth and operates at 10 Gb s-1 with 2 V peak-to-peak driving voltage in a push-pull configuration for binary transmission of a non-return-to-zero data stream over 50 km of single-mode fibre. This device is the key building block for graphene-based integrated photonics, enabling compact and energy-efficient hybrid graphene-silicon modulators for telecom, datacom and other applications.

Long-term stability of amorphous-silicon modules

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1986-01-01

The Jet Propulsion Laboratory (JPL) program of developing qualification tests necessary for amorphous silicon modules, including appropriate accelerated environmental tests reveal degradation due to illumination. Data were given which showed the results of temperature-controlled field tests and accelerated tests in an environmental chamber.

The effect of different module configurations on the radiation tolerance of multijunction solar cells

NASA Technical Reports Server (NTRS)

Gee, James M.; Curtis, Henry B.

1988-01-01

The effect of different module configurations on the performance of multijunction (MJ) solar cells in a radiation environment was investigated. Module configuration refers to the electrical circuit in which the subcells of the multijunction cell are wired. Experimental data for AlCaAs, GaAs, InGaAs, and silicon single-junction concentrator cells subjected to 1 MeV electron irradiation was used to calculate the expected performance of AlGaAs/InGaAs, AlGa/silicon, GaAs/InGaAs, and GaAs/silicon Mj concentrator cells. These calculations included independent, series, and voltage-matched configurations. The module configuration was found to have a significant impact on the radiation tolerance characteristic of the MJ cells.

Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator.

PubMed

Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui; Yu, Mingbin

2012-03-26

We demonstrate a 26 Gbit/s Mach-Zehnder silicon optical modulator. The doping concentration and profile are optimized, and a modulation efficiency with the figure of merit (VπL) of 1.28 V·cm is achieved. We design an 80-nm-wide intrinsic silicon gap between the p-type and n-type doped regions to reduce the capacitance of the diode and prevent the diode from working in a slow diffusion mode. Therefore, the modulator can be driven with a small differential voltage of 0.5 V with no bias. Without the elimination of the dissipated power of the series resistors and the reflected power of the electrical signal, the maximum power consumption is 3.8 mW.

Correlation between surface carbon concentration and adhesive strength at the Si cell/EVA interface in a PV module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhere, N.G.; Wollam, M.E.; Gadre, K.S.

1997-12-31

Silicon solar cell/EVA composite is being studied with an objective to further improve the manufacturing technology of PV modules. Sample extraction and adhesion strength measurement process has been modified. Silicon and EVA samples were extracted from solar cells of new and field-deployed modules. Optical microscopy, SEM, and AES of samples from new modules revealed EVA islands covering most of the silicon cell surface indicating a cohesive failure. A good correlation was observed between the adhesive strength and surface concentration of carbon. A low carbon concentration which indicated less EVA clinging to cell surface always resulted in low adhesive strengths. Themore » correlation provides a simple technique for inferring properties of EVA.« less

Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Shtel’makh, K. F.; Kalyadin, A. E.

2015-12-15

Low-temperature photoluminescence in n-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called X and W centers formed from self-interstitial silicon atoms, H and P centers containing oxygen atoms, and Er centers containing Er{sup 3+} ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for X and H centers. In the case of P and Er centers, the values of the energies practically coincide with previously published data.more » For W centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.« less

A hybrid life-cycle inventory for multi-crystalline silicon PV module manufacturing in China

NASA Astrophysics Data System (ADS)

Yao, Yuan; Chang, Yuan; Masanet, Eric

2014-11-01

China is the world’s largest manufacturer of multi-crystalline silicon photovoltaic (mc-Si PV) modules, which is a key enabling technology in the global transition to renewable electric power systems. This study presents a hybrid life-cycle inventory (LCI) of Chinese mc-Si PV modules, which fills a critical knowledge gap on the environmental implications of mc-Si PV module manufacturing in China. The hybrid LCI approach combines process-based LCI data for module and poly-silicon manufacturing plants with a 2007 China IO-LCI model for production of raw material and fuel inputs to estimate ‘cradle to gate’ primary energy use, water consumption, and major air pollutant emissions (carbon dioxide, methane, sulfur dioxide, nitrous oxide, and nitrogen oxides). Results suggest that mc-Si PV modules from China may come with higher environmental burdens that one might estimate if one were using LCI results for mc-Si PV modules manufactured elsewhere. These higher burdens can be reasonably explained by the efficiency differences in China’s poly-silicon manufacturing processes, the country’s dependence on highly polluting coal-fired electricity, and the expanded system boundaries associated with the hybrid LCI modeling framework. The results should be useful for establishing more conservative ranges on the potential ‘cradle to gate’ impacts of mc-Si PV module manufacturing for more robust LCAs of PV deployment scenarios.

Environmental testing of block 2 solar cell modules

NASA Technical Reports Server (NTRS)

Griffith, J. S.

1979-01-01

The testing procedures and results of samples of the LSA Project Block 2 procurement of silicon solar cell modules are described. Block 2 was the second large scale procurement of silicon solar cell modules made by the JPL Low-cost Solar Array Project with deliveries in 1977 and early 1978. The results showed that the Block 2 modules were greatly improved over Block 1 modules. In several cases it was shown that design improvements were needed to reduce environmental test degradation. These improvements were incorporated during this production run.

Experimental comparison of direct detection Nyquist SSB transmission based on silicon dual-drive and IQ Mach-Zehnder modulators with electrical packaging.

PubMed

Ruan, Xiaoke; Li, Ke; Thomson, David J; Lacava, Cosimo; Meng, Fanfan; Demirtzioglou, Iosif; Petropoulos, Periklis; Zhu, Yixiao; Reed, Graham T; Zhang, Fan

2017-08-07

We have designed and fabricated a silicon photonic in-phase-quadrature (IQ) modulator based on a nested dual-drive Mach-Zehnder structure incorporating electrical packaging. We have assessed its use for generating Nyquist-shaped single sideband (SSB) signals by operating it either as an IQ Mach-Zehnder modulator (IQ-MZM) or using just a single branch of the dual-drive Mach-Zehnder modulator (DD-MZM). The impact of electrical packaging on the modulator bandwidth is also analyzed. We demonstrate 40 Gb/s (10Gbaud) 16-ary quadrature amplitude modulation (16-QAM) Nyquist-shaped SSB transmission over 160 km standard single mode fiber (SSMF). Without using any chromatic dispersion compensation, the bit error rates (BERs) of 5.4 × 10 -4 and 9.0 × 10 -5 were measured for the DD-MZM and IQ-MZM, respectively, far below the 7% hard-decision forward error correction threshold. The performance difference between IQ-MZM and DD-MZM is most likely due to the non-ideal electrical packaging. Our work is the first experimental comparison between silicon IQ-MZM and silicon DD-MZM in generating SSB signals. We also demonstrate 50 Gb/s (12.5Gbaud) 16-QAM Nyquist-shaped SSB transmission over 320 km SSMF with a BER of 2.7 × 10 -3 . Both the silicon IQ-MZM and the DD-MZM show potential for optical transmission at metro scale and for data center interconnection.

R&D issues in scale-up and manufacturing of amorphous silicon tandem modules

NASA Astrophysics Data System (ADS)

Arya, R. R.; Carlson, D. E.; Chen, L. F.; Ganguly, G.; He, M.; Lin, G.; Middya, R.; Wood, G.; Newton, J.; Bennett, M.; Jackson, F.; Willing, F.

1999-03-01

R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6 Ft2 monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing.

N-type compensated silicon: resistivity, crystal growth, carrier lifetime, and relevant application for HIT solar cells

NASA Astrophysics Data System (ADS)

Li, Shuai; Gao, Wenxiu; Li, Zhen; Cheng, Haoran; Lin, Jinxia; Cheng, Qijin

2017-05-01

N-type compensated silicon shows unusual distribution of resistivity as crystal grows compared to the n-type uncompensated silicon. In this paper, evolutions of resistivities with varied concentrations of boron and varied starting resistivities of the n-type silicon are intensively calculated. Moreover, reduction of carrier mobility is taken into account by Schindler’s modified model of carrier mobility for the calculation of resistivity of the compensated silicon. As for substrates of solar cells, optimized starting resistivity and corresponding concentration of boron are suggested for better uniformity of resistivity and higher yield (fraction with ρ >0.5 ~ Ω \\centerdot \\text{cm} ) of the n-type compensated Cz crystal rod. A two-step growth method is investigated to obtain better uniformity of resistivity of crystal rod, and this method is very practical especially for the n-type compensated silicon. Regarding the carrier lifetime, the recombination by shallow energy-level dopants is taken into account for the compensated silicon, and evolution of carrier lifetime is simulated by considering all main recombination centers which agrees well with our measured carrier lifetimes as crystal grows. The n-type compensated silicon shows a larger reduction of carrier lifetime compared to the uncompensated silicon at the beginning of crystal growth, and recombination with a oxygen-related deep defect is sufficient to describe the reduction of degraded lifetime. Finally, standard heterojunction with intrinsic thin-layer (HIT) solar cells are made with substrates from the n-type compensated silicon rod, and a high efficiency of 22.1% is obtained with a high concentration (0.8× {{10}16}~\\text{c}{{\\text{m}}-3} ) of boron in the n-type compensated silicon feedstock. However, experimental efficiencies of HIT solar cells based on the n-type compensated silicon show an average reduction of 4% along with the crystal length compared to the uncompensated silicon. The obtained results enrich our knowledge on the n-type compensated silicon and contribute to the development of n-type compensated silicon-based solar cells for commercial application.

Hybrid Silicon Photonic Integration using Quantum Well Intermixing

NASA Astrophysics Data System (ADS)

Jain, Siddharth R.

With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with modulators with a 3-dB bandwidth above 25 GHz, thus demonstrating coarse wavelength division multiplexing transmitter on silicon.

The effect of material matching on the stress-induced power degradation for light-redirecting-ribbon-based silicon photovoltaic modules

NASA Astrophysics Data System (ADS)

Gou, X. F.; Zhuang, H.; Zhu, J.; Li, X. Y.

2018-01-01

Light redirecting ribbons (LRR) have recently been adopted in crystalline silicon modules in PV industry. The introduction of this LRR may bring additional stress at the boundary of the busbar/wafer contact, which may probably lead to higher power loss after aging. The thermal cycle and electroluminescence (EL) test are employed in this work to investigate this stress-induced power degradation for LRR-based crystalline silicon modules. The obtained results demonstrate that with increase in the thickness of the EVA encapsulant or the decrease in the thickness of the LRR, the power degradation induced by stress can be effectively diminished.

Performance of a Low-Cost, Low-Concentration Photovoltaic Module

NASA Astrophysics Data System (ADS)

Shell, Kara A.; Brown, Scott A.; Schuetz, Mark A.; Davis, Bob J.; French, Roger H.

2011-12-01

In order to significantly reduce the cost of solar power, Replex Plastics has developed a low-cost, low-concentration PV module incorporating acrylic mirror reflectors. The reflectors are compound parabolic concentrators designed for use with low-accuracy single axis trackers. The prototypes use crystalline silicon photovoltaic cells and achieved 7.1x concentration over a receiver without reflectors. The 1×1.6 m module used 1/10th the silicon of a standard module and produced a max power of 140 W.

Silicon dendritic web material

NASA Technical Reports Server (NTRS)

Meier, D. L.; Campbell, R. B.; Sienkiewicz, L. J.; Rai-Choudhury, P.

1982-01-01

The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

Silicon dendritic web material

NASA Astrophysics Data System (ADS)

Meier, D. L.; Campbell, R. B.; Sienkiewicz, L. J.; Rai-Choudhury, P.

1982-03-01

The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, B. L.

2008-09-01

The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

Pulsed plasma chemical synthesis of carbon-containing titanium and silicon oxide based nanocomposite

NASA Astrophysics Data System (ADS)

Kholodnaya, Galina; Sazonov, Roman; Ponomarev, Denis; Zhirkov, Igor

2018-03-01

The paper presents the results of the experimental investigation of the physical and chemical properties of the TixSiyCzOw composite nanopowders, which were first obtained using a pulsed plasma chemical method. The pulsed plasma chemical synthesis was achieved using a technological electron accelerator (TEA-500). The parameters of the electron beam are as follows: 400-450 keV electron energy, 60 ns half-amplitude pulse duration, up to 200 J pulse energy, and 5 cm beam diameter. The main physical and chemical properties of the obtained composites were studied (morphology, chemical, elemental and phase composition). The morphology of the TixSiyCzOw composites is multiform. There are large round particles, with an average size of above 150 nm. Besides, there are small particles (an average size is in the range of 15-40 nm). The morphology of small particles is in the form of crystallites. In the TixSiyCzOw synthesised composite, the peak with a maximum of 946 cm-1 was registered. The presence of IR radiation in this region of the spectrum is typical for the deformation of atomic oscillations in the Si‒О‒Ti bond, which indicates the formation of the solid solution. The composites consist of two crystal phases - anatase and rutile. The prevailing phase of the crystal structure is rutile.

Mechanical grooving effect on the gettering efficiency of crystalline silicon based solar cells

NASA Astrophysics Data System (ADS)

Zarroug, Ahmed; Hamed, Zied Ben; Derbali, Lotfi; Ezzaouia, Hatem

2017-04-01

This paper examines a gettering process of Czochralski silicon (CZ) via mechanical texture, followed by two step heat treatment in the presence of porous silicon layer (PSL) under oxygen flow gas. It is shown that a process with PS has a positive trend of improvement in the electronic quality, and found to be more efficient when used in combination with mechanical grooving. We obtained a significant increase of the effective minority carrier lifetime and majority charge carriers mobility. Thus, there is an apparent decrease in the resistivity. These parameters were estimated through a The Quasi-Steady-State Photo-Conductance technique (QSSPC), the van Der Pauw method and Hall Effect. Particularly, we have made obvious that the large enhancement of the electronic quality of the wafers can be related to the presence of grooves, the influence during which the gettering process is of importance to overcome the unexpected saturation phenomena. The current voltage I-V characteristics of all samples had been measured under illumination. They were shown to enhance the photovoltaic properties of solar cells.

Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules

NASA Technical Reports Server (NTRS)

Mesch, H. G.

1984-01-01

The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).

Potential of thin-film solar cell module technology

NASA Technical Reports Server (NTRS)

Shimada, K.; Ferber, R. R.; Costogue, E. N.

1985-01-01

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

Validation of mathematical model for CZ process using small-scale laboratory crystal growth furnace

NASA Astrophysics Data System (ADS)

Bergfelds, Kristaps; Sabanskis, Andrejs; Virbulis, Janis

2018-05-01

The present material is focused on the modelling of small-scale laboratory NaCl-RbCl crystal growth furnace. First steps towards fully transient simulations are taken in the form of stationary simulations that deal with the optimization of material properties to match the model to experimental conditions. For this purpose, simulation software primarily used for the modelling of industrial-scale silicon crystal growth process was successfully applied. Finally, transient simulations of the crystal growth are presented, giving a sufficient agreement to experimental results.

The reliability and stability of multijunction amorphous silicon PV modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlson, D.E.

1995-11-01

Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies aremore » about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.« less

Spectrum sensitivity, energy yield, and revenue prediction of PV and CPV modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinsey, Geoffrey S., E-mail: Geoffrey.kinsey@ee.doe.gov

2015-09-28

Impact on module performance of spectral irradiance variation has been determined for III-V multijunctions compared against the four most common flat-plate module types (cadmium telluride, multicrystalline silicon, copper indium gallium selenide, and monocrystalline silicon. Hour-by-hour representative spectra were generated using atmospheric variables for Albuquerque, New Mexico, USA. Convolution with published values for external quantum efficiency gave the predicted current output. When combined with specifications of commercial PV modules, energy yield and revenue were predicted. This approach provides a means for optimizing PV module design based on various site-specific temporal variables.

Spectrum sensitivity, energy yield, and revenue prediction of PV and CPV modules

NASA Astrophysics Data System (ADS)

Kinsey, Geoffrey S.

2015-09-01

Impact on module performance of spectral irradiance variation has been determined for III-V multijunctions compared against the four most common flat-plate module types (cadmium telluride, multicrystalline silicon, copper indium gallium selenide, and monocrystalline silicon. Hour-by-hour representative spectra were generated using atmospheric variables for Albuquerque, New Mexico, USA. Convolution with published values for external quantum efficiency gave the predicted current output. When combined with specifications of commercial PV modules, energy yield and revenue were predicted. This approach provides a means for optimizing PV module design based on various site-specific temporal variables.

Optical modulation techniques for analog signal processing and CMOS compatible electro-optic modulation

NASA Astrophysics Data System (ADS)

Gill, Douglas M.; Rasras, Mahmoud; Tu, Kun-Yii; Chen, Young-Kai; White, Alice E.; Patel, Sanjay S.; Carothers, Daniel; Pomerene, Andrew; Kamocsai, Robert; Beattie, James; Kopa, Anthony; Apsel, Alyssa; Beals, Mark; Mitchel, Jurgen; Liu, Jifeng; Kimerling, Lionel C.

2008-02-01

Integrating electronic and photonic functions onto a single silicon-based chip using techniques compatible with mass-production CMOS electronics will enable new design paradigms for existing system architectures and open new opportunities for electro-optic applications with the potential to dramatically change the management, cost, footprint, weight, and power consumption of today's communication systems. While broadband analog system applications represent a smaller volume market than that for digital data transmission, there are significant deployments of analog electro-optic systems for commercial and military applications. Broadband linear modulation is a critical building block in optical analog signal processing and also could have significant applications in digital communication systems. Recently, broadband electro-optic modulators on a silicon platform have been demonstrated based on the plasma dispersion effect. The use of the plasma dispersion effect within a CMOS compatible waveguide creates new challenges and opportunities for analog signal processing since the index and propagation loss change within the waveguide during modulation. We will review the current status of silicon-based electrooptic modulators and also linearization techniques for optical modulation.

Silicon single mode waveguide modulator based upon switchable Bragg reflector

NASA Astrophysics Data System (ADS)

Azogui, Jonathan; Ramon, Yonathan; Businaro, Luca; Ciasca, Gabriele; Gerardino, Annamaria; Zalevsky, Zeev

2018-02-01

In this paper we present the development of an electro optical "Bragg" modulator for telecommunication, in both design and fabrication. The device consists from a regular single mode silicon waveguide (WG) in which an effective Bragg reflector is "turned on" within the WG by means of external bias, due to the plasma dispersion effect, in which the (complexed) refractive index is affected by carrier concentration within the Silicon. Three different strategies are presented for both design and fabrication.

Optical modulation in silicon-vanadium dioxide photonic structures

NASA Astrophysics Data System (ADS)

Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

2017-08-01

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

All silicon approach to modulation and detection at λ = 2 μm

NASA Astrophysics Data System (ADS)

Littlejohns, Callum G.; Nedeljkovic, Milos; Cao, Wei; Soler Penades, Jordi; Hagan, David; Ackert, Jason J.; Rouifed, Mohamed Saïd.; Wang, Wanjun; Zhang, Zecen; Qiu, Haodong; Guo Xin, Tina; Knights, Andrew P.; Reed, Graham T.; Mashanovich, Goran Z.; Wang, Hong; Thomson, David J.

2018-02-01

Silicon photonics has traditionally focused on near infrared wavelengths, with tremendous progress seen over the past decade. However, more recently, research has extended into mid infrared wavelengths of 2 μm and beyond. Optical modulators are a key component for silicon photonics interconnects at both the conventional communication wavelengths of 1.3 μm and 1.55 μm, and the emerging mid-infrared wavelengths. The mid-infrared wavelength range is particularly interesting for a number of applications, including sensing, healthcare and communications. The absorption band of conventional germanium photodetectors only extends to approximately 1.55 μm, so alternative methods of photodetection are required for the mid-infrared wavelengths. One possible CMOS compatible solution is a silicon defect detector. Here, we present our recent results in these areas. Modulation at the wavelength of 2 μm has been theoretically investigated, and photodetection above 25 Gb/s has been practically demonstrated.

Using the intrinsic properties of silicon micro-ring modulators for characterization of RF termination

NASA Astrophysics Data System (ADS)

Wang, Zhao; Knights, Andrew P.

2017-02-01

We describe a direct experimental method to determine the effective driving voltage (Vpp) applied to a silicon photonic modulator possessing an impedance mismatch between the unterminated capacitive load and input source. This method thus permits subsequent estimation of the power consumption of an imperfectly terminated device as well as a deduction of load impedance for optimization of termination design. The capacitive load in this paper is a silicon micro-ring modulator with an integrated p-n junction acting as a phase shifter. The RF reflection under high-speed drive is directly determined from observation of the eye-diagram following measurement of the power transfer function for various junction bias.

A hybrid silicon membrane spatial light modulator for optical information processing

NASA Technical Reports Server (NTRS)

Pape, D. R.; Hornbeck, L. J.

1984-01-01

A new two dimensional, fast, analog, electrically addressable, silicon based membrane spatial light modulator (SLM) was developed for optical information processing applications. Coherent light reflected from the mirror elements is phase modulated producing an optical Fourier transform of an analog signal input to the device. The DMD architecture and operating parameters related to this application are presented. A model is developed that describes the optical Fourier transform properties of the DMD.

R&D issues in scale-up and manufacturing of amorphous silicon tandem modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arya, R.R.; Carlson, D.E.; Chen, L.F.

1999-03-01

R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6&hthinsp;Ft{sup 2} monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing. {copyright} {ital 1999 American Institute of Physics.}

Stress studies in EFG

NASA Technical Reports Server (NTRS)

1983-01-01

Experimental work in support of stress studies in high speed silicon sheet growth has been emphasized in this quarter. Creep experiments utilizing four-point bending have been made in the temperature range from 1000 C to 1360 C in CZ silicon as well as on EFG ribbon. A method to measure residual stress over large areas using laser interferometry to map strain distributions under load is under development. A fiber optics sensor to measure ribbon temperature profiles has been constructed and is being tested in a ribbon growth furnace environment. Stress and temperature field modeling work has been directed toward improving various aspects of the finite element computing schemes. Difficulties in computing stress distributions with a very high creep intensity and with non-zero interface stress have been encountered and additional development of the numerical schemes to cope with these problems is required. Temperature field modeling has been extended to include the study of heat transfer effects in the die and meniscus regions.

Hall effect analysis in irradiated silicon samples with different resistivities

NASA Astrophysics Data System (ADS)

Borchi, E.; Bruzzi, M.; Dezillie, B.; Lazanu, S.; Li, Z.; Pirollo, S.

1999-08-01

The changes induced by neutron irradiation in n- and p-type silicon samples with starting resistivities from 10 /spl Omega/-cm up to 30 k/spl Omega/-cm, grown using different techniques, as float-zone (FZ), Czochralski (CZ) and epitaxial, have been analyzed by Van der Pauw and Hall effect measurements. Increasing the fluence, each set of samples evolves toward a quasi-intrinsic p-type material. This behavior has been explained in the frame of a two-level model, that considers the introduction during irradiation of mainly two defects. A deep acceptor and a deep donor, probably related to the divacancy and to the C/sub i/O/sub i/ complex, are placed in the upper and lower half of the forbidden gap, respectively. This simple model explains quantitatively the data on resistivity and Hall coefficient of each set of samples up to the fluence of /spl ap/10/sup 14/ n/cm/sup 2/.

Resonance ultrasonic vibrations in Cz-Si wafers as a possible diagnostic technique in ion implantation

NASA Astrophysics Data System (ADS)

Zhao, Z. Y.; Ostapenko, S.; Anundson, R.; Tvinnereim, M.; Belyaev, A.; Anthony, M.

2001-07-01

The semiconductor industry does not have effective metrology for well implants. The ability to measure such deep level implants will become increasingly important as we progress along the technology road map. This work explores the possibility of using the acoustic whistle effect on ion implanted silicon wafers. The technique detects the elastic stress and defects in silicon wafers by measuring the sub-harmonic f/2 resonant vibrations on a wafer induced via backside contact to create standing waves, which are measured by a non-contact ultrasonic probe. Preliminary data demonstrates that it is sensitive to implant damage, and there is a direct correlation between this sub-harmonic acoustic mode and some of the implant and anneal conditions. This work presents the results of a feasibility study to assess and quantify the correspondent whistle effect to implant damage, residual damage after annealing and intrinsic defects.

Flat-plate solar array project process development area: Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1986-01-01

Several different techniques to simultaneously diffuse the front and back junctions in dendritic web silicon were investigated. A successful simultaneous diffusion reduces the cost of the solar cell by reducing the number of processing steps, the amount of capital equipment, and the labor cost. The three techniques studied were: (1) simultaneous diffusion at standard temperatures and times using a tube type diffusion furnace or a belt furnace; (2) diffusion using excimer laser drive-in; and (3) simultaneous diffusion at high temperature and short times using a pulse of high intensity light as the heat source. The use of an excimer laser and high temperature short time diffusion experiment were both more successful than the diffusion at standard temperature and times. The three techniques are described in detail and a cost analysis of the more successful techniques is provided.

Silicon solar cell process development, fabrication, and analysis

NASA Technical Reports Server (NTRS)

Yoo, H. I.; Iles, P. A.; Leung, D. C.

1981-01-01

Work has progressed in fabrication and characterization of solar cells from ubiquitous crystallization process (UCP) wafers and LASS ribbons. Gettering tests applied to UCP wafers made little change on their performance compared with corresponding baseline data. Advanced processes such as shallow junction (SJ), back surface field (BSF), and multilayer antireflection (MLAR) were also applied. While BSF by Al paste had shunting problems, cells with SJ and BSF by evaporated Al, and MLAR did achieve 14.1% AMI on UCP silicon. The study of LASS material was very preliminary. Only a few cells with SJ, BSR, (no BSF) and MLAR were completed due to mechanical yield problems after lapping the material. Average efficiency was 10.7% AMI with 13.4% AMI for CZ controls. Relatively high minority carrier diffusion lengths were obtained. The lower than expected Jsc could be partially explained by low active area due to irregular sizes.

Laser annealing of ion implanted CZ silicon for solar cell junction formation

NASA Technical Reports Server (NTRS)

Katzeff, J. S.

1981-01-01

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

Advanced photovoltaic power systems using tandem GaAs/GaSb concentrator modules

NASA Technical Reports Server (NTRS)

Fraas, L. M.; Kuryla, M. S.; Pietila, D. A.; Sundaram, V. S.; Gruenbaum, P. E.; Avery, J. E.; Dihn, V.; Ballantyne, R.; Samuel, C.

1992-01-01

In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant, and potentially less expensive than the traditional silicon flat plate electric power supply. The new Boeing tandem concentrator (BTC) module uses an array of lightweight silicone Fresnel lenses mounted on the front side of a light weight aluminum honeycomb structure to focus sunlight onto small area solar cells mounted on a thin back plane. This module design is shown schematically. The tandem solar cell in this new module consists of a gallium arsenide light sensitive cell with a 24 percent energy conversion efficiency stacked on top of a gallium antimonide infrared sensitive cell with a conversion efficiency of 6 percent. This gives a total efficiency 30 percent for the cell-stack. The lens optical efficiency is typically 85 percent. Discounting for efficiency losses associated with lens packing, cell wiring, and cell operating temperature still allows for a module efficiency of 22 percent which leads to a module power density of 300 Watts/sq. m. This performance provides more than twice the power density available from a single crystal silicon flat plate module and at least four times the power density available from amorphous silicon modules. The fact that the lenses are only 0.010 ft. thick and the aluminum foil back plane is only 0.003 ft. thick leads to a very lightweight module. Although the cells are an easy to handle thickness of 0.020 ft., the fact that they are small, occupying one-twenty-fifth of the module area, means that they add little to the module weight. After summing all the module weights and given the high module power, we find that we are able to fabricate BTC modules with specific power of 100 watts/kg.

Intelligent Front-end Electronics for Silicon photodetectors (IFES)

NASA Astrophysics Data System (ADS)

Sauerzopf, Clemens; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

2016-05-01

While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

Flat Plate Solar Array Project: Proceedings of the 20th Project Integration Meeting

NASA Technical Reports Server (NTRS)

Mcdonald, R. R.

1982-01-01

Progress made by the Flat-Plate Solar Array Project during the period November 1981 to April 1982 is reported. Project analysis and integration, technology research in silicon material, large-area silicon sheet and environmental isolation, cell and module formation, engineering sciences, and module performance and failure analysis are covered.

NREL Technologies Win National Awards

Science.gov Websites

percent for a prototype module, 7.6 percent for a commercial module) from amorphous silicon, which is less expensive to produce than crystalline silicon used in most commercial solar cells. The resulting product is biomass resources such as wood waste or plant material into gas for electric power generation. The new

Direct metallization local Al-back surface field for high efficiency screen printed crystalline silicon solar cells.

PubMed

Lee, Jonghwan; Park, Cheolmin; Dao, Vinh Ai; Lee, Youn-Jung; Ryu, Kyungyul; Choi, Gyuho; Kim, Bonggi; Ju, Minkyu; Jeong, Chaehwan; Yi, Junsin

2013-11-01

In this paper, we present a detailed study on the local back contact (LBC) formation of rear-surface-passivated silicon solar cells, where both the LBC opening and metallization are realized by one-step alloying of a dot of fine pattern screen-printed aluminum paste with the silicon substrate. Based on energy dispersive spectrometer (EDS) and scanning electron microscopy (SEM) characterizations, we suggest that the aluminum distribution and the silicon concentration determine the local-back-surface-field (Al-p+) layer thickness, resistivity of the Al-p+ and hence the quality of the Al-p+ formation. The highest penetration of silicon concentration of 78.17% in aluminum resulted in the formation of a 5 microm-deep Al-p+ layer, and the minimum LBC resistivity of 0.92 x 10-6 omega cm2. The degradation of the rear-surface passivation due to high temperature of the LBC formation process can be fully recovered by forming gas annealing (FGA) at temperature and hydrogen content of 450 degrees C and 15%, respectively. The application of the optimized LBC of rear-surface-passivated by a dot of fine pattern screen(-) printed aluminum paste resulted in efficiency of up to 19.98% for the p-type czochralski (CZ) silicon wafers with 10.24 cm2 cell size at 649 mV open circuit voltage. By FGA for rear-surface passivation recovery, efficiencies up to 20.35% with a V(OC) of 662 mV, FF of 82%, and J(SC) of 37.5 mA/cm2 were demonstrated.

Electric Field Distribution in High Voltage Power Modules Using Finite Element Simulations

NASA Astrophysics Data System (ADS)

Wang, Zhao; Liu, Yaoning

2018-03-01

With the development of the high voltage insulated gate bipolar transistor (IGBT) power module, it leads to serious problems concerning the electric field insulation. The electric field capabilities of the silicone gels used in the power module encapsulation directly affect the module insulation. Some solutions have been developed to optimize the electric field and reliability. In this letter, the finite element simulation was used to analyze and localize the maximum electric field position; solutions were proposed to improve the module insulation. It’s demonstrated that BaTiO3 silicone composite is a promising insulation material for high voltage power device.

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

PubMed

Kim, Gyungock; Park, Jeong Woo; Kim, In Gyoo; Kim, Sanghoon; Kim, Sanggi; Lee, Jong Moo; Park, Gun Sik; Joo, Jiho; Jang, Ki-Seok; Oh, Jin Hyuk; Kim, Sun Ae; Kim, Jong Hoon; Lee, Jun Young; Park, Jong Moon; Kim, Do-Won; Jeong, Deog-Kyoon; Hwang, Moon-Sang; Kim, Jeong-Kyoum; Park, Kyu-Sang; Chi, Han-Kyu; Kim, Hyun-Chang; Kim, Dong-Wook; Cho, Mu Hee

2011-12-19

We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.

Protection by Chrysanthemum zawadskii extract from liver damage of mice caused by carbon tetrachloride is maybe mediated by modulation of QR activity

PubMed Central

Seo, Ji Yeon; Lim, Soon Sung; Park, Jia; Lim, Ji-Sun; Kim, Hyo Jung; Kang, Hui Jung; Yoon Park, Jung Han

2010-01-01

Our previous study demonstrated that methanolic extract of Chrysanthemum zawadskii Herbich var. latilobum Kitamura (Compositae) has the potential to induce detoxifying enzymes such as NAD(P)H:(quinone acceptor) oxidoreductase 1 (EC 1.6.99.2) (NQO1, QR) and glutathione S-transferase (GST). In this study we further fractionated methanolic extract of Chrysanthemum zawadskii and investigated the detoxifying enzyme-inducing potential of each fraction. The fraction (CZ-6) shown the highest QR-inducing activity was found to contain (+)-(3S,4S,5R,8S)-(E)-8-acetoxy-4-hydroxy-3-isovaleroyloxy-2-(hexa-2,4-diynyliden)-1,6-dioxaspiro [4,5] decane and increased QR enzyme activity in a dose-dependent manner. Furthermore, CZ-6 fraction caused a dose-dependent enhancement of luciferase activity in HepG2-C8 cells generated by stably transfecting antioxidant response element-luciferase gene construct, suggesting that it induces antioxidant/detoxifying enzymes through antioxidant response element (ARE)-mediated transcriptional activation of the relevant genes. Although CZ-6 fraction failed to induce hepatic QR in mice over the control, it restored QR activity suppressed by CCl4 treatment to the control level. Hepatic injury induced by CCl4 was also slightly protected by pretreatment with CZ-6. In conclusion, although CZ-6 fractionated from methanolic extract of Chrysanthemum zawadskii did not cause a significant QR induction in mice organs such as liver, kidney, and stomach, it showed protective effect from liver damage caused by CCl4. PMID:20461196

Protection by Chrysanthemum zawadskii extract from liver damage of mice caused by carbon tetrachloride is maybe mediated by modulation of QR activity.

PubMed

Seo, Ji Yeon; Lim, Soon Sung; Park, Jia; Lim, Ji-Sun; Kim, Hyo Jung; Kang, Hui Jung; Yoon Park, Jung Han; Kim, Jong-Sang

2010-04-01

Our previous study demonstrated that methanolic extract of Chrysanthemum zawadskii Herbich var. latilobum Kitamura (Compositae) has the potential to induce detoxifying enzymes such as NAD(P)H:(quinone acceptor) oxidoreductase 1 (EC 1.6.99.2) (NQO1, QR) and glutathione S-transferase (GST). In this study we further fractionated methanolic extract of Chrysanthemum zawadskii and investigated the detoxifying enzyme-inducing potential of each fraction. The fraction (CZ-6) shown the highest QR-inducing activity was found to contain (+)-(3S,4S,5R,8S)-(E)-8-acetoxy-4-hydroxy-3-isovaleroyloxy-2-(hexa-2,4-diynyliden)-1,6-dioxaspiro [4,5] decane and increased QR enzyme activity in a dose-dependent manner. Furthermore, CZ-6 fraction caused a dose-dependent enhancement of luciferase activity in HepG2-C8 cells generated by stably transfecting antioxidant response element-luciferase gene construct, suggesting that it induces antioxidant/detoxifying enzymes through antioxidant response element (ARE)-mediated transcriptional activation of the relevant genes. Although CZ-6 fraction failed to induce hepatic QR in mice over the control, it restored QR activity suppressed by CCl(4) treatment to the control level. Hepatic injury induced by CCl(4) was also slightly protected by pretreatment with CZ-6. In conclusion, although CZ-6 fractionated from methanolic extract of Chrysanthemum zawadskii did not cause a significant QR induction in mice organs such as liver, kidney, and stomach, it showed protective effect from liver damage caused by CCl(4).

Manufacturing Methods and Technology Program for Low Cost Hybrid Silicon Photodetector Modules

DTIC Science & Technology

1979-12-30

RESEARCH LN EVEMN TECHNICAL REPORT 4 CORADOOM- 77- C -0489-F I CMANUFACTURING METHODS AND TECHNOLOGY PROGRAM FOR LOW COST HYBRID SILICON PHOTODETECTORS...rINAL REPORT OR US ARMY CONTRACT NO, DAAD07-77- C -0489 TITLED 11MM&TMud SURE FOR COS HYBRID SILICON PHOTODRTECTOR MODULS", DATED 79/12/30 Gentlemen...when it is no longer needed. Do not return it to the originator. D.-stributi-on! Availability COcas- :Dist c specia S I ’ Cb.A *"itI. -P0 ~~J~,+~1

76 FR 70960 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-16

... silicon photovoltaic cells, whether or not assembled into modules (``solar cells'') from the People's Republic of China (``PRC'') filed in proper form by SolarWorld Industries America Inc. (``Petitioner'').\\1... Tariff Act of 1930, as amended (``the Act''), Petitioner alleges that imports of solar cells from the PRC...

77 FR 17439 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-26

... silicon photovoltaic cells, whether or not assembled into modules (solar cells) from the People's Republic... History The Department initiated a countervailing duty (CVD) investigation of solar cells from the PRC on.... Customs and Border Protection (CBP) entry data for U.S. imports of solar cells from the PRC for the period...

Flexible integration of free-standing nanowires into silicon photonics.

PubMed

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2013-04-08

An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

PubMed Central

Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

2016-01-01

Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper “Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure” (Kichou et al., 2016) [1]. PMID:26977439

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

NASA Astrophysics Data System (ADS)

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-04-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

25-Gb/s broadband silicon modulator with 0.31-V·cm VπL based on forward-biased PIN diodes embedded with passive equalizer.

PubMed

Baba, Takeshi; Akiyama, Suguru; Imai, Masahiko; Usuki, Tatsuya

2015-12-28

We investigated the broadband operations of a silicon Mach-Zehnder modulator (MZM) based on a forward-biased-PIN diode. The phase shifter was integrated with a passive-circuit equalizer to compensate for the narrowband characteristics of the diodes, which consists of a simple resistance of doped silicon and a parallel-plate metal capacitance. The device structure was simple and fabricated using standard CMOS processes. The measured results for a 50-Ω driver indicated there was a small VπL of 0.31 V·cm and a flat frequency response for a 3-dB bandwidth (f(3dB)) of 17 GHz, which agree well with the designed values. A 25-Gb/s large-signal operation was obtained using binary signals without pre-emphasis. The modulator showed a linear modulation property to the applied voltage, due to the metal capacitance of the equalizer.

Positron annihilation on the surfaces of SiO 2 films thermally grown on single crystal of Cz-Si

NASA Astrophysics Data System (ADS)

Deng, Wen; Yue, Li; Zhang, Wei; Cheng, Xu-xin; Zhu, Yan-yan; Huang, Yu-yang

2009-09-01

Two-detector coincidence system and mono-energetic slow positron beam has been applied to measure the Doppler broadening spectra for single crystals of SiO2, SiO2 films with different thickness thermally grown on single crystal of Cz-Si, and single crystal of Si without oxide film. Oxygen is recognized as a peak at about 11.85 × 10-3m0c on the ratio curves. The S parameters decrease with the increase of positron implantation energy for the single crystal of SiO2 and Si without oxide film. However, for the thermally grown SiO2-Si sample, the S parameters in near surface of the sample increase with positron implantation energy. It is due to the formation of silicon oxide at the surface, which lead to lower S value. S and W parameters vary with positron implantation depth indicate that the SiO2-Si system consist of a surface layer, a SiO2 layer, a SiO2-Si interface layer and a semi-infinite Si substrate.

Integration of hybrid silicon lasers and electroabsorption modulators.

PubMed

Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

2008-08-18

We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.

Metal-capped silicon organic micro-ring electro-optical modulator (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zaki, Aya O.; Kirah, Khaled A.; Swillam, Mohamed A.

2017-02-01

An ultra-compact hybrid plasmonic waveguide ring electro-optical modulator is designed to be easily fabricated on silicon on insulator (SOI) substrates using standard silicon photonics technology. The proposed waveguide is based on a buried standard silicon waveguide of height 220 nm topped with polymer and metal. The key advantage of this novel design is that only the silicon layer of the waveguide is structured as a coupled ring resonator. Then, the device is covered with electro-optical polymer and metal in post processes with no need for lithography or accurate mask alignment techniques. The simple fabrication method imposes many design challenges to obtain a resonator of reasonable loaded quality factor and high extinction ratio. Here, the performance of the resonator is optimized in the telecom wavelength range around 1550 nm using 3D FDTD simulations. The design of the coupling junction between the access waveguide and the tightly bent ring is thoroughly studied. The extension of the metal over the coupling region is exploited to make the critical dimension of the design geometry at least 2.5 times larger than conventional plasmonic resonators and the design is thus more robust. In this paper, we demonstrate an electro-optical modulator that offers an insertion loss < 1 dB, a modulation depth of 12 dB for an applied peak to peak voltage of only 2 V and energy consumption of 1.74 fJ/bit. The performance is superior to previously reported hybrid plasmonic ring resonator based modulators while the design shows robustness and low fabrication cost.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atmaram, G.H.; Ventre, G.G.; Maytrott, C.W.

This study evaluates the long-term effects of outdoor exposure and high voltage operation on the performance and reliability of flat-plate crystalline silicon photovoltaic modules. The photovoltaic modules selected for this study were employed in the arrays of grid-connected residential photovoltaic prototype systems for over ten years at the Southeast Regional Experiment Station (SE RES) in Cape Canaveral, Florida. The modules included Mobil Ra-180 EFG ribbon silicon modules, Photowatt MU-7061 and ARCO 16-2000 single-crystal silicon modules with round cells. The Mobil and Photowatt modules were Block 5 generation, while the ARCO modules were Block 4 generation type. In all three typesmore » of photovoltaic modules (Mobil, Photowatt and ARCO), no significant power loss occurred over more than ten years of outdoor operation in the warm, humid and ocean-salt environments of coastal Florida. However, the wet insulation resistance values of a majority of the modules in all three types were lower than the values recommended in IEEE Standard 1262. This indicates potential future safety, reliability and lifetime related problems. The visual defects were more pronounced in the ARCO modules, which were manufactured in 1980 than in the Mobil and Photowatt modules, both of which were fabricated in 1983. The ARCO modules showed significant damage to the back surface tedlar in the form of tearing of the tedlar. All of the Mobil and most of the ARCO modules showed significant browning of the encapsulant, while only about half of the Photowatt modules showed significant encapsulant browning. The encapsulant discoloration generally did not appear to have any effect on the modules` power generation.« less

The 19th Project Integration Meeting

NASA Technical Reports Server (NTRS)

Mcdonald, R. R.

1981-01-01

The Flat-Plate Solar Array Project is described. Project analysis and integration is discussed. Technology research in silicon material, large-area silicon sheet and environmental isolation; cell and module formation; engineering sciences, and module performance and failure analysis. It includes a report on, and copies of visual presentations made at, the 19th Project Integration Meeting held at Pasadena, California, on November 11, 1981.

High-efficiency THz modulator based on phthalocyanine-compound organic films

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Ting; Zhang, Bo, E-mail: bzhang@cnu.edu.cn, E-mail: sjl-phy@cnu.edu.cn; Shen, Jingling, E-mail: bzhang@cnu.edu.cn, E-mail: sjl-phy@cnu.edu.cn

2015-02-02

We report a high efficiency, broadband terahertz (THz) modulator following a study of phthalocyanine-compound organic films irradiated with an external excitation laser. Both transmission and reflection modulations of each organic/silicon bilayers were measured using THz time-domain and continuous-wave systems. For very low intensities, the experimental results show that AlClPc/Si can achieve a high modulation factor for transmission and reflection, indicating that AlClPc/Si has a superior modulation efficiency compared with the other films (CuPc and SnCl{sub 2}Pc). In contrast, the strong attenuation of the transmitted and reflected THz waves revealed that a nonlinear absorption process takes place at the organic/silicon interface.

Elemental Education.

ERIC Educational Resources Information Center

Daniel, Esther Gnanamalar Sarojini; Saat, Rohaida Mohd.

2001-01-01

Introduces a learning module integrating three disciplines--physics, chemistry, and biology--and based on four elements: carbon, oxygen, hydrogen, and silicon. Includes atomic model and silicon-based life activities. (YDS)

Titanium-silicon oxide film structures for polarization-modulated infrared reflection absorption spectroscopy

PubMed Central

Dunlop, Iain E.; Zorn, Stefan; Richter, Gunther; Srot, Vesna; Kelsch, Marion; van Aken, Peter A.; Skoda, Maximilian; Gerlach, Alexander; Spatz, Joachim P.; Schreiber, Frank

2010-01-01

We present a titanium-silicon oxide film structure that permits polarization modulated infrared reflection absorption spectroscopy on silicon oxide surfaces. The structure consists of a ~6 nm sputtered silicon oxide film on a ~200 nm sputtered titanium film. Characterization using conventional and scanning transmission electron microscopy, electron energy loss spectroscopy, X-ray photoelectron spectroscopy and X-ray reflectometry is presented. We demonstrate the use of this structure to investigate a selectively protein-resistant self-assembled monolayer (SAM) consisting of silane-anchored, biotin-terminated poly(ethylene glycol) (PEG). PEG-associated IR bands were observed. Measurements of protein-characteristic band intensities showed that this SAM adsorbed streptavidin whereas it repelled bovine serum albumin, as had been expected from its structure. PMID:20418963

Choosing a Silicone Encapsulant for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Velderrain, Michelle

2011-12-01

Growth in the solar industry has resulted in newer technologies, specifically concentrator photovoltaic (CPV) modules, to explore using new types of materials such as silicone encapsulants. CPV and LCPV module designs are to achieve the most efficient energy conversion possible however it is equally important to demonstrate long term reliability. Silicone is a material of interest due to its thermal stability and ability to absorb stresses incurred during thermal cycling. The refractive index of clear silicone adhesives is advantageous because it can be optimized using phenyl groups to match BK7 glass and other substrates to minimize light loss at the interfaces but it is relatively unknown how the optical properties change over time possibly yellowing in such a harsh environment. A 1.41 silicone encapsulant is compared to a 1.52 refractive index silicone. Optical Absorption (300 nm-1300 nm), Water Vapor Permeability, Moisture Absorption and effects of oxidation at elevated temperatures will be compared of these materials to aid the engineer in choosing a silicone for their CPV application. Non-phenyl containing 1.41 RI silicones have been used for several years for bonding solar arrays in the satellite industry. Phenyl groups on the siloxane polymer can change various properties of the silicone. Understanding how phenyl affects these properties allows the engineer to understand the benefits and risks when using a RI matching silicone to minimize light loss versus a non-phenyl containing silicone.

Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

ATLAS Collaboration; Ahmad, A.; Andreazza, A.

2008-06-02

A small set of final prototypes of the ATLAS Inner Detector silicon tracking system(Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained inmore » the alignmentof the silicon modules is of the order of 5 mm in their most precise coordinate.« less

Frequency non-degenerate phase-sensitive optical parametric amplification based on four-wave-mixing in width-modulated silicon waveguides.

PubMed

Wang, Zhaolu; Liu, Hongjun; Sun, Qibing; Huang, Nan; Li, Xuefeng

2014-12-15

A width-modulated silicon waveguide is proposed to realize non-degenerate phase sensitive optical parametric amplification. It is found that the relative phase at the input of the phase sensitive amplifier (PSA) θIn-PSA can be tuned by tailoring the width and length of the second segment of the width-modulated silicon waveguide, which will influence the gain in the parametric amplification process. The maximum gain of PSA is larger by 9 dB compared with the phase insensitive amplifier (PIA) gain, and the gain bandwidth of PSA is larger by 35 nm compared with the gain bandwidth of PIA. Our on-chip PSA can find important potential applications in highly integrated optical circuits for optical chip-to-chip communication and computers.

Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

NASA Astrophysics Data System (ADS)

Fu, Enjin

Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier injection modulators and light-emitting diodes (LED) with drive voltage requirements below 1.5V. Measurement results show an optical link based on a 70MHz red LED work well at 300Mbps by using the pre-emphasis driver module. A traveling wave electrode (TWE) modulator structure is presented, including a novel design methodology to address process limitations imposed by a commercial silicon fabrication technology. Results from 3D full wave EM simulation demonstrate the application of the design methodology to achieve specifications, including phase velocity matching, insertion loss, and impedance matching. Results show the HBT-based TWE-EAM system has the bandwidth higher than 60GHz.

Field-effect modulation of the thermoelectric characteristics of silicon nanowires on plastic substrates.

PubMed

Choi, Jinyong; Jeon, Youngin; Cho, Kyoungah; Kim, Sangsig

2016-12-02

In this study, we demonstrate the substantial enhancement of the thermoelectric power factors of silicon nanowires (SiNWs) on plastic substrates achievable by field-effect modulation. The Seebeck coefficient and electrical conductivity are adjusted by varying the charge carrier concentration via electrical modulation with a gate voltage in the 0 to ±5 range, thus enhancing the power factors from 2.08 to 935 μW K -2 m -1 ) for n-type SiNWs, and from 453 to 944 μW K -2 m -1 ) for p-type SiNWs. The electrically modulated thermoelectric characteristics of SiNWs are analyzed and discussed.

In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spataru, Sergiu; Hacke, Pater; Sera, Dezso

2015-09-15

We analyze the degradation of multi-crystalline silicon photovoltaic modules undergoing simultaneous thermal, mechanical, and humidity stress testing to develop a dark environmental chamber in-situ measurement procedure for determining module power loss. From the analysis we determine three main categories of failure modes associated with the module degradation consisting of: shunting, recombination losses, increased series resistance losses, and current mismatch losses associated with a decrease in photo-current generation by removal of some cell areas due to cell fractures. Based on the analysis, we propose an in-situ module power loss monitoring procedure that relies on dark current-voltage measurements taken during the stressmore » test, and initial and final module flash testing, to determine the power degradation characteristic of the module.« less

Solar photovoltaic systems

NASA Technical Reports Server (NTRS)

Forney, R. G.

1978-01-01

The Department of Energy's photovoltaic program is outlined. The main objective of the program is the development of low cost reliable terrestrial photovoltaic systems. A second objective is to foster widespread use of the system in residential, industrial and commercial application. The system is reviewed by examining each component; silicon solar cell, silicon solar cell modules, advanced development modules and power systems. Cost and applications of the system are discussed.

Electronics of the data acquisition system of the DANSS detector based on silicon photomultipliers

NASA Astrophysics Data System (ADS)

Svirida, D.

2018-01-01

The electronics of the data acquisition system based on silicon photomultipliers is briefly described. The elements and modules of the system were designed and constructed at ITEP especially for the DANSS detector. Examples of digitized signals obtained with the presented electronic modules and selected results on processing of the DANSS engineering data-taking run in spring 2016 are given.

Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

DTIC Science & Technology

2016-05-01

AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled... Heat Input to an Acceleration Field Kirk L. Yerkes (AFRL/RQQI) and James D. Scofield (AFRL/RQQE) Flight Systems Integration Branch (AFRL/RQQI...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a

System and method for liquid silicon containment

DOEpatents

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2013-05-28

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

System and method for liquid silicon containment

DOEpatents

Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

2014-06-03

This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Nonlinear Fano-Resonant Dielectric Metasurfaces

DOE PAGES

Yang, Yuanmu; Wang, Wenyi; Boulesbaa, Abdelaziz; ...

2015-10-26

Strong nonlinear light matter interaction is highly sought-after for a variety of applications including lasing and all-optical light modulation. Recently, resonant plasmonic structures have been considered promising candidates for enhancing nonlinear optical processes due to their ability to greatly enhance the optical near-field; however, their small mode volumes prevent the inherently large nonlinear susceptibility of the metal from being efficiently exploited. We present an alternative approach that utilizes a Fano-resonant silicon metasurface. The metasurface results in strong near-field enhancement within the volume of the silicon resonator while minimizing two photon absorption. Here, we measure a third harmonic generation enhancement factormore » of 1.5 105 with respect to an unpatterned silicon film and an absolute conversion efficiency of 1.2 10 6 with a peak pump intensity of 3.2 GW cm 2. The enhanced nonlinearity, combined with a sharp linear transmittance spectrum, results in transmission modulation with a modulation depth of 36%. Finally, the modulation mechanism is studied by pump probe experiments« less

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

PubMed Central

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-01-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices. PMID:28406177

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

PubMed

Feng, Ning-Ning; Feng, Dazeng; Liao, Shirong; Wang, Xin; Dong, Po; Liang, Hong; Kung, Cheng-Chih; Qian, Wei; Fong, Joan; Shafiiha, Roshanak; Luo, Ying; Cunningham, Jack; Krishnamoorthy, Ashok V; Asghari, Mehdi

2011-04-11

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45 µm(2), a total insertion loss of 2.5-5 dB and an extinction ratio of 4-7.5 dB over a wavelength range of 1610-1640 nm with -4V(pp) bias. The estimated Δα/α value is in the range of 2-3.3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate. © 2011 Optical Society of America

Modulation of thermal conductivity in kinked silicon nanowires: phonon interchanging and pinching effects.

PubMed

Jiang, Jin-Wu; Yang, Nuo; Wang, Bing-Shen; Rabczuk, Timon

2013-04-10

We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

Stress studies in EFG

NASA Technical Reports Server (NTRS)

1983-01-01

Stress distributions were calculated for a creep law to predict a rate of plastic deformation. The expected reduction in stresses is obtained. Improved schemes for calculating growth system temperature distributions were evaluated. Temperature field modeling examined the possibility of using horizontal temperature gradients to influence stress distribution in ribbon. The defect structure of 10 cm wide ribbon grown in the cartridge system was examined. A new feature is identified from an examination of cross sectional micrographs. It consists of high density dislocation bands extending through the ribbon thickness. A four point bending apparatus was constructed for high temperature study of the creep response of silicon, to be used to generate defects for comparison with as grown defects in ribbon. The feasibility of laser interferometric techniques for sheet residual stress distribution measurement is examined. The mathematical formalism for calculating residual stress from changes in surface topology caused by an applied stress in a rectangular specimen was developed, and the system for laser interferometric measurement to obtain surface topology data was tested on CZ silicon.

Thin-film reliability and engineering overview

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1984-01-01

The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao, Uchida, Yasunori; Johnston, Steve; Hacke, Peter

We studied a bypass diode recuperated from fielded modules in a rooftop installation to determine the failure mechanism. The field-failed diode showed similar characteristics to thermal runaway, specifically X-ray tomography evidence of migrated metal. We also observed burn marks on the silicon surface like those lab-stressed for thermal runaway. Reaction products are more soluble than silicon and the surface is oxygen rich.

Thin-film reliability and engineering overview

NASA Astrophysics Data System (ADS)

Ross, R. G., Jr.

1984-10-01

The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results of a study for Task 3 of the Low Cost Solar Array Project, directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicon based materials, are reported. Results of the following are discussed: (1) weather-ometer stressing vs. weathering history of silicon and silicon modified materials; (2) humidity/temperature cycling exposure; (3) exposure at high humidity/high temperature; (4) outdoor exposure stress; (5) thermal cycling stress; and (6) UV screening agents. The plans for the next quarter are outlined.

Low cost solar array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

NASA Technical Reports Server (NTRS)

1980-01-01

Technical activities are reported in the design of process, facilities, and equipment for producing silicon at a rate and price comensurate with production goals for low cost solar cell modules. The silane-silicone process has potential for providing high purity poly-silicon on a commercial scale at a price of fourteen dollars per kilogram by 1986, (1980 dollars). Commercial process, economic analysis, process support research and development, and quality control are discussed.

Plate-slot polymer waveguide modulator on silicon-on-insulator.

PubMed

Qiu, Feng; Spring, Andrew M; Hong, Jianxun; Yokoyama, Shiyoshi

2018-04-30

Electro-optic (EO) modulators are vital for efficient "electrical to optical" transitions and high-speed optical interconnects. In this work, we applied an EO polymer to demonstrate modulators on silicon-on-insulator substrates. The fabricated Mach-Zehnder interferometer (MZI) and ring resonator consist of a Si and TiO 2 slot, in which the EO polymer was embedded to realize a low-driving and large bandwidth modulation. The designed optical and electrical constructions are able to provide a highly concentrated TM mode with low propagation loss and effective EO properties. The fabricated MZI modulator shows a π-voltage-length product of 0.66 V·cm and a 3-dB bandwidth of 31 GHz. The measured EO activity is advantageous to exploit the ring modulator with a resonant tunability of 0.065 nm/V and a 3-dB modulation bandwidth up to 13 GHz.

Characteristic analysis of a photoexcited metamaterial perfect absorber at terahertz frequencies

NASA Astrophysics Data System (ADS)

Bing, Pibin; Huang, Shichao; Li, Zhongyang; Yu, Zhou; Lu, Ying; Yao, Jianquan

2017-06-01

The absorption characteristics of a photoexcited metamaterial absorber at terahertz frequencies were analyzed in this study. Filling photosensitive semiconductor silicon into the gap between the resonator arms leads to modulation of its electromagnetic response through a pump beam which changes conductivity of silicon. Comparisons of terahertz absorbing properties which were caused by different thicknesses and dielectric constants of polyimide, cell sizes and widths of SRRs, and lengths and conductivities of the photosensitive silicon, were studied by using Finite Difference Time Domain (FDTD) from 0.4 THz to 1.6 THz. The results of this study will facilitate the design and preparation of terahertz modulator, filters and absorbers.

Gigahertz speed operation of epsilon-near-zero silicon photonic modulators

DOE PAGES

Wood, Michael G.; Campione, Salvatore; Parameswaran, S.; ...

2018-02-21

Opmore » tical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 V p p , we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.« less

Gigahertz speed operation of epsilon-near-zero silicon photonic modulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wood, Michael G.; Campione, Salvatore; Parameswaran, S.

Opmore » tical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 V p p , we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.« less

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

NASA Astrophysics Data System (ADS)

Barbier, G.; Cadoux, F.; Clark, A.; Endo, M.; Favre, Y.; Ferrere, D.; Gonzalez-Sevilla, S.; Hanagaki, K.; Hara, K.; Iacobucci, G.; Ikegami, Y.; Jinnouchi, O.; La Marra, D.; Nakamura, K.; Nishimura, R.; Perrin, E.; Seez, W.; Takubo, Y.; Takashima, R.; Terada, S.; Todome, K.; Unno, Y.; Weber, M.

2014-04-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 1034 cm-2 s-1. For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described.

Silicon pore optics for the international x-ray observatory

NASA Astrophysics Data System (ADS)

Wille, E.; Wallace, K.; Bavdaz, M.; Collon, M. J.; Günther, R.; Ackermann, M.; Beijersbergen, M. W.; Riekerink, M. O.; Blom, M.; Lansdorp, B.; de Vreede, L.

2017-11-01

Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The International X-ray Observatory (IXO) requires a mirror assembly of 3 m2 effective area (at 1.5 keV) and an angular resolution of 5 arcsec. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the manufacturing process ranging from single mirror plates towards complete focusing mirror modules mounted in flight configuration. The performance of the mirror modules is tested using X-ray pencil beams or full X-ray illumination. In 2009, an angular resolution of 9 arcsec was achieved, demonstrating the improvement of the technology compared to 17 arcsec in 2007. Further development activities of Silicon Pore Optics concentrate on ruggedizing the mounting system and performing environmental tests, integrating baffles into the mirror modules and assessing the mass production.

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

NASA Technical Reports Server (NTRS)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

The all-optical modulator in dielectric-loaded waveguide with graphene-silicon heterojunction structure

NASA Astrophysics Data System (ADS)

Sun, Feiying; Xia, Liangping; Nie, Changbin; Shen, Jun; Zou, Yixuan; Cheng, Guiyu; Wu, Hao; Zhang, Yong; Wei, Dongshan; Yin, Shaoyun; Du, Chunlei

2018-04-01

All-optical modulators based on graphene show great promise for on-chip optical interconnects. However, the modulation performance of all-optical modulators is usually based on the interaction between graphene and the fiber, limiting their potential in high integration. Based on this point, an all-optical modulator in a dielectric-loaded waveguide (DLW) with a graphene-silicon heterojunction structure (GSH) is proposed. The DLW raises the waveguide mode, which provides a strong light-graphene interaction. Sufficient tuning of the graphene Fermi energy beyond the Pauli blocking effect is obtained with the presented GSH structure. Under the modulation light with a wavelength of 532 nm and a power of 60 mW, a modulation efficiency of 0.0275 dB µm-1 is achieved for light with a communication wavelength of 1.55 µm in the experiment. This modulator has the advantage of having a compact footprint, which may make it a candidate for achieving a highly integrated all-optical modulator.

Electrical production testing of the D0 Silicon microstrip tracker detector modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

D0, SMT Production Testing Group; /Fermilab

The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

Ultralow drive voltage silicon traveling-wave modulator.

PubMed

Baehr-Jones, Tom; Ding, Ran; Liu, Yang; Ayazi, Ali; Pinguet, Thierry; Harris, Nicholas C; Streshinsky, Matt; Lee, Poshen; Zhang, Yi; Lim, Andy Eu-Jin; Liow, Tsung-Yang; Teo, Selin Hwee-Gee; Lo, Guo-Qiang; Hochberg, Michael

2012-05-21

There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.

Large Scale Beam-Tests of the Silicon and Scintillator-SiPM Modules for the CMS High Granularity Calorimeter at the HL-LHC

NASA Astrophysics Data System (ADS)

Jain, Shilpi

The High Granularity Calorimeter (HGCAL) will replace the existing CMS endcap calorimeters during the High Luminosity run of the LHC (HL-LHC) era. The electromagnetic part, as well as the first layers of the hadronic part, foresees around 600 square metres of silicon sensors as the active material. The remainder of the HGCAL, in the lower radiation environment, will use plastic scintillators with on-tile silicon photomultiplier (SiPM) readout. Prototype hexagonal silicon modules, featuring a new ASIC (Skiroc2-CMS), together with a modified version of the scintillator-SiPM CALICE AHCAL, have been tested in beams at CERN. This setup represents a full slice through HGCAL. Results from MIP calibration, energy resolution, electromagnetic and hadronic shower-shapes are presented using electrons, pions and muons.

A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Demonstration of an optical directed half-subtracter using integrated silicon photonic circuits.

PubMed

Liu, Zilong; Zhao, Yongpeng; Xiao, Huifu; Deng, Lin; Meng, Yinghao; Guo, Xiaonan; Liu, Guipeng; Tian, Yonghui; Yang, Jianhong

2018-04-01

An integrated silicon photonic circuit consisting of two silicon microring resonators (MRRs) is proposed and experimentally demonstrated for the purpose of half-subtraction operation. The thermo-optic modulation scheme is employed to modulate the MRRs due to its relatively simple fabrication process. The high and low levels of the electrical pulse signal are utilized to define logic 1 and 0 in the electrical domain, respectively, and the high and low levels of the optical power represent logic 1 and 0 in the optical domain, respectively. Two electrical pulse sequences regarded as the operands are applied to the corresponding micro-heaters fabricated on the top of the MRRs to achieve their dynamic modulations. The final operation results of bit-wise borrow and difference are obtained at their corresponding output ports in the form of light. At last, the subtraction operation of two bits with the operation speed of 10 kbps is demonstrated successfully.

Cross-phase modulation-induced spectral broadening in silicon waveguides.

PubMed

Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Schröder, Jochen; Eggleton, Benjamin J

2016-01-11

We analytically and experimentally investigate cross-phase modulation (XPM) in silicon waveguides. In contrast to the well known result in pure Kerr media, the spectral broadening ratio of XPM to self-phase modulation is not two in the presence of either two-photon absorption (TPA) or free carriers. The physical origin of this change is different for each effect. In the case of TPA, this nonlinear absorption attenuates and slightly modifies the pulse shape due to differential absorption in the pulse peak and wings. When free carriers are present two different mechanisms modify the dynamics. First, free-carrier absorption performs a similar role to TPA, but is additionally asymmetric due to the delayed free-carrier response. Second, free-carrier dispersion induces an asymmetric blue phase shift which competes directly with the symmetric Kerr-induced XPM red shift. We confirm this analysis with pump-probe experiments in a silicon photonic crystal waveguide.

Biwavelength transceiver module for parallel simultaneous bidirectional optical interconnections

NASA Astrophysics Data System (ADS)

Nguyen, Nga T. H.; Ukaegbu, Ikechi A.; Sangirov, Jamshid; Cho, Mu-Hee; Lee, Tae-Woo; Park, Hyo-Hoon

2013-12-01

The design of a biwavelength transceiver (TRx) module for parallel simultaneous bidirectional optical interconnects is described. The TRx module has been implemented using two different wavelengths, 850 and 1060 nm, to send and receive signals simultaneously through a common optical interface while optimizing cost and performance. Filtering mirrors are formed in the optical fibers which are embedded on a V-grooved silicon substrate for reflecting and filtering optical signals from/to vertical-cavity surface-emitting laser (VCSEL)/photodiode (PD). The VCSEL and PD are flip-chip bonded on individual silicon optical benches, which are attached on the silicon substrate for optical signal coupling from the VCSEL to fiber and from fiber to the PD. A high-speed and low-loss ceramic printed circuit board, which has a compact size of 0.033 cc, has been designed to carry transmitter and receiver chips for easy packaging of the TRx module. Applied for quad small form-factor pluggable applications at 40-Gbps operation, the four-channel biwavelength TRx module showed clear eye diagrams with a bit error rate (BER) of 10-12 at input powers of -5 and -5.8 dBm for 1060 and 850 nm operation modes, respectively.

Long-term leaching of photovoltaic modules

NASA Astrophysics Data System (ADS)

Nover, Jessica; Zapf-Gottwick, Renate; Feifel, Carolin; Koch, Michael; Metzger, Jörg W.; Werner, Jürgen H.

2017-08-01

Some photovoltaic module technologies use toxic materials. We report long-term leaching on photovoltaic module pieces of 5 × 5 cm2 size. The pieces are cut out from modules of the four major commercial photovoltaic technologies: crystalline and amorphous silicon, cadmium telluride as well as from copper indium gallium diselenide. To simulate different environmental conditions, leaching occurs at room temperature in three different water-based solutions with pH 3, 7, and 11. No agitation is performed to simulate more representative field conditions. After 360 days, about 1.4% of lead from crystalline silicon module pieces and 62% of cadmium from cadmium telluride module pieces are leached out in acidic solutions. The leaching depends heavily on the pH and the redox potential of the aqueous solutions and it increases with time. The leaching behavior is predictable by thermodynamic stability considerations. These predictions are in good agreement with the experimental results.

Potential-Induced Degradation-Delamination Mode in Crystalline Silicon Modules: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, Peter L; Kempe, Michael D; Wohlgemuth, John

A test sequence producing potential-induced degradation-delamination (PID-d) in crystalline silicon modules has been tested and found comparable under visual inspection to cell/encapsulant delamination seen in some fielded modules. Four commercial modules were put through this sequence, 85 degrees C, 85%, 1000 h damp heat, followed by an intensive PID stress sequence of 72 degrees C, 95% RH, and -1000 V, with the module face grounded using a metal foil. The 60 cell c-Si modules exhibiting the highest current transfer (4.4 center dot 10-4 A) exhibited PID-d at the first inspection after 156 h of PID stress. Effects promoting PID-d aremore » reduced adhesion caused by damp heat, sodium migration further reducing adhesion to the cells, and gaseous products of electrochemical reactions driven by the applied system voltage. A new work item proposal for an IEC test standard to evaluate for PID-d is anticipated.« less

Low-loss and energy efficient modulation in silicon photonic waveguides by adiabatic elimination scheme

NASA Astrophysics Data System (ADS)

Mrejen, Michael; Suchowski, Haim; Bachelard, Nicolas; Wang, Yuan; Zhang, Xiang

2017-07-01

High-speed Silicon Photonics calls for solutions providing a small footprint, high density, and minimum crosstalk, as exemplified by the recent development of integrated optical modulators. Yet, the performances of such modulators are hindered by intrinsic material losses, which results in low energy efficiency. Using the concept of Adiabatic Elimination, here, we introduce a scheme allowing for the low-loss modulation in densely packed waveguides. Our system is composed of two waveguides, whose coupling is mediated by an intermediate third waveguide. The signal is carried by the two outer modes, while the active control of their coupling is achieved via the intermediate dark mode. The modulation is performed by the manipulation of the central-waveguide mode index, leaving the signal-carrying waveguides unaffected by the loss. We discuss how Adiabatic Elimination provides a solution for mitigating signal losses and designing relatively compact, broadband, and energy-efficient integrated optical modulators.

IR-LTS a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kissinger, G.; Richter, H.; Vanhellemont, J.

1996-12-01

One of the main advantages of infrared light scattering tomography (IR-LST) is the wide range of defect densities that can be studied using this technique. As-grown defects of low density and very small size as well as oxygen precipitation related defects that appear in densities up to some 1010 cm{sup -3} can be observed. As-grown wafers with a {open_quotes}stacking fault ring{close_quotes} were investigated in order to correlate the defects observed by IR-LST with the results of Secco etching and alcaline cleaning solution (SC1) treatment revealing flow pattern defects (FPDs) and crystal originated particles (COPs), respectively. These wafers were studied aftermore » a wet oxidation at 1100{degrees}C for 100 min. In processed CZ silicon wafers it was possible to identify stacking faults and prismatic punching systems directly from the IR-LST image. Brewster angle illumination is a special mode to reveal defects in epitaxial layers in a non-destructive way. Misfit dislocations in the interface between a Ge{sub 0.92}Si{sub 0.08} layer and a silicon substrate were studied using this mode that allows to observe very low dislocation densities.« less

High temperature material interactions of thermoelectric systems using silicon germanium.

NASA Technical Reports Server (NTRS)

Stapfer, G.; Truscello, V. C.

1973-01-01

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Evaluation of Mismatch Losses due to Shunts in industrial Silicon Photovoltaic Modules

NASA Astrophysics Data System (ADS)

Somasundaran, P.; Shilpi, M.; Gupta, R.

2017-05-01

In order to achieve higher efficiencies in photovoltaic module technology, it is important to characterize the shunts and other defects which degrade the performance of cells and modules as well as decrease their efficiency. These shunts also affect the reliability of cells and modules. It is important to understand how much fill factor and power loss is caused by the presence of shunts in the module. Shunts not only reduce the module power output, but also affect the I-V characteristics of the cell and hence the characteristics of the shunted cells are different from those of the shunt-free cells connected in the module leading to the mismatch effect. This is an interesting effect which has been systematically investigated in the present work. Moreover, the flow of increased shunt current will give rise to increased temperature in the region of shunt, which will affect the cell and hence module performance. In the present study, the distributed diode model has been extended to the module level and applied to evaluate the electrical mismatch losses and thermal mismatch losses due to shunts in industrial Silicon PV modules.

On-chip microwave signal generation based on a silicon microring modulator.

PubMed

Shao, Haifeng; Yu, Hui; Li, Xia; Li, Yan; Jiang, Jianfei; Wei, Huan; Wang, Gencheng; Dai, Tingge; Chen, Qimei; Yang, Jianyi; Jiang, Xiaoqing

2015-07-15

A photonic-assisted microwave signal generator based on a silicon microring modulator is demonstrated. The microring cavity incorporates an embedded PN junction that enables a microwave signal to modulate the lightwave circling inside. The DC component of the modulated light is trapped in the cavity, while the high-order sideband components are able to exit the cavity and then generate microwave signals at new frequencies in a photodetector. In our proof-of-concept experiment, a 10 GHz microwave signal is converted to a 20 GHz signal in the optical domain with an electrical harmonic suppression ratio of 22 dB. An analytic model is also established to explain the operation mechanism, which agrees well with the measured data.

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

PubMed

Yu, Hui; Pantouvaki, Marianna; Van Campenhout, Joris; Korn, Dietmar; Komorowska, Katarzyna; Dumon, Pieter; Li, Yanlu; Verheyen, Peter; Absil, Philippe; Alloatti, Luca; Hillerkuss, David; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-06-04

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

Summary of flat-plate solar array project documentation. Abstracts of published documents, 1975 to June 1982

NASA Technical Reports Server (NTRS)

1982-01-01

Technologies that will enable the private sector to manufacture and widely use photovoltaic systems for the generation of electricity in residential, commercial, industrial, and government applications at a cost per watt that is competitive with other means is investigated. Silicon refinement processes, advanced silicon sheet growth techniques, solar cell development, encapsulation, automated fabrication process technology, advanced module/array design, and module/array test and evaluation techniques are developed.

Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

NASA Technical Reports Server (NTRS)

1979-01-01

The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

Study of run time errors of the ATLAS pixel detector in the 2012 data taking period

NASA Astrophysics Data System (ADS)

Gandrajula, Reddy Pratap

The high resolution silicon Pixel detector is critical in event vertex reconstruction and in particle track reconstruction in the ATLAS detector. During the pixel data taking operation, some modules (Silicon Pixel sensor +Front End Chip+ Module Control Chip (MCC)) go to an auto-disable state, where the Modules don't send the data for storage. Modules become operational again after reconfiguration. The source of the problem is not fully understood. One possible source of the problem is traced to the occurrence of single event upset (SEU) in the MCC. Such a module goes to either a Timeout or Busy state. This report is the study of different types and rates of errors occurring in the Pixel data taking operation. Also, the study includes the error rate dependency on Pixel detector geometry.

Optical modulation in silicon waveguides via charge state control of deep levels.

PubMed

Logan, D F; Jessop, P E; Knights, A P; Wojcik, G; Goebel, A

2009-10-12

The control of defect mediated optical absorption at a wavelength of 1550 nm via charge state manipulation is demonstrated using optical absorption measurements of indium doped Silicon-On-Insulator (SOI) rib waveguides. These measurements introduce the potential for modulation of waveguide transmission by using the local depletion and injection of free-carriers to change deep-level occupancy. The extinction ratio and modulating speed are simulated for a proposed device structure. A 'normally-off' depletion modulator is described with an extinction coefficient limited to 5 dB/cm and switching speeds in excess of 1 GHz. For a carrier injection modulator a fourfold enhancement in extinction ratio is provided relative to free carrier absorption alone. This significant improvement in performance is achieved with negligible increase in driving power but slightly degraded switching speed.

Porous Silicon as Antireflecting Layer

NASA Astrophysics Data System (ADS)

Kosoglu, Gulsen; Yumak, Mehmet; Okmen, Selim; Ozatay, Ozhan; Skarlatos, Yani; Garcia, Carlos

2013-03-01

The main aim in photovoltaic industry is to produce efficient and energy competitive solar cell modules at low cost. Efficient AntiReflection Coatings (ARC) improve light collection and thereby increase the current output of solar cells. Broadband ARCs are desirable for efficient application over the entire solar spectrum and porous silicon layers as antireflective coating layers provide successful light collection. In the study the most critical physical parameters of porous silicon are examined, homogeneous and uniform porous layers are produced. The photoluminescence spectrum and optical parameters of porous layers have been investigated, and we are now in the process of improving the efficiency of the device by modulating the structure of the porous silicon layers and studying its photovoltaic characteristics. We would like to thank to Mr. Aziz U. Caliskan and his group for their valuable support from TUBITAK YITAL. This Project is supported by Bogazici University Research Funding: 5782, TUBITAK Grant : 209T099, and Bogazici University Infrared Funding: 6121.

Rabi oscillation and electron-spin-echo envelope modulation of the photoexcited triplet spin system in silicon

NASA Astrophysics Data System (ADS)

Akhtar, Waseem; Sekiguchi, Takeharu; Itahashi, Tatsumasa; Filidou, Vasileia; Morton, John J. L.; Vlasenko, Leonid; Itoh, Kohei M.

2012-09-01

We report on a pulsed electron paramagnetic resonance (EPR) study of the photoexcited triplet state (S=1) of oxygen-vacancy centers in silicon. Rabi oscillations between the triplet sublevels are observed using coherent manipulation with a resonant microwave pulse. The Hahn echo and stimulated echo decay profiles are superimposed with strong modulations known as electron-spin-echo envelope modulation (ESEEM). The ESEEM spectra reveal a weak but anisotropic hyperfine coupling between the triplet electron spin and a 29Si nuclear spin (I=1/2) residing at a nearby lattice site, that cannot be resolved in conventional field-swept EPR spectra.

A review of manufacturing metrology for improved reliability of silicon photovoltaic modules

NASA Astrophysics Data System (ADS)

Davis, Kristopher O.; Walters, Joseph; Schneller, Eric; Seigneur, Hubert; Brooker, R. Paul; Scardera, Giuseppe; Rodgers, Marianne P.; Mohajeri, Nahid; Shiradkar, Narendra; Dhere, Neelkanth G.; Wohlgemuth, John; Rudack, Andrew C.; Schoenfeld, Winston V.

2014-10-01

In this work, the use of manufacturing metrology across the supply chain to improve crystalline silicon (c-Si) photovoltaic (PV) module reliability and durability is addressed. Additionally, an overview and summary of a recent extensive literature survey of relevant measurement techniques aimed at reducing or eliminating the probability of field failures is presented. An assessment of potential gaps is also given, wherein the PV community could benefit from new research and demonstration efforts. This review is divided into three primary areas representing different parts of the c-Si PV supply chain: (1) feedstock production, crystallization and wafering; (2) cell manufacturing; and (3) module manufacturing.

A Module Experimental Process System Development Unit (MEPSDU). [development of low cost solar arrays

NASA Technical Reports Server (NTRS)

1981-01-01

The technical readiness of a cost effective process sequence that has the potential for the production of flat plate photovoltaic modules which met the price goal in 1986 of $.70 or less per Watt peak was demonstrated. The proposed process sequence was reviewed and laboratory verification experiments were conducted. The preliminary process includes the following features: semicrystalline silicon (10 cm by 10 cm) as the silicon input material; spray on dopant diffusion source; Al paste BSF formation; spray on AR coating; electroless Ni plate solder dip metallization; laser scribe edges; K & S tabbing and stringing machine; and laminated EVA modules.

Frequency comb generation in a silicon ring resonator modulator.

PubMed

Demirtzioglou, Iosif; Lacava, Cosimo; Bottrill, Kyle R H; Thomson, David J; Reed, Graham T; Richardson, David J; Petropoulos, Periklis

2018-01-22

We report on the generation of an optical comb of highly uniform in power frequency lines (variation less than 0.7 dB) using a silicon ring resonator modulator. A characterization involving the measurement of the complex transfer function of the ring is presented and five frequency tones with a 10-GHz spacing are produced using a dual-frequency electrical input at 10 and 20 GHz. A comb shape comparison is conducted for different modulator bias voltages, indicating optimum operation at a small forward-bias voltage. A time-domain measurement confirmed that the comb signal was highly coherent, forming 20.3-ps-long pulses.

22.7% efficient PERL silicon solar cell module with a textured front surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, J.; Wang, A.; Campbell, P.

1997-12-31

This paper describes a solar cell module efficiency of 22.7% independently measured at Sandia National Laboratories. This is the highest ever confirmed efficiency for a photovoltaic module of this size achieved by cells made from any material. This 778-cm{sup 2} module used 40 large-area double layer antireflection coated PERL (passivated emitter, rear locally-diffused) silicon cells of average efficiency of 23.1%. A textured front module surface considerably improve the module efficiency. Also reported is an independently confirmed efficiency of 23.7% for a 21.6 cm{sup 2} cell of the type used in the module. Using these PERL cells in the 1996 Worldmore » Solar Challenge solar car race from Darwin to Adelaide across Australia, Honda`s Dream and Aisin Seiki`s Aisol III were placed first and third, respectively. Honda also set a new record by reaching Adelaide in four days with an average speed of 90km/h over the 3010 km course.« less

Analysis of multiple internal reflections in a parallel aligned liquid crystal on silicon SLM.

PubMed

Martínez, José Luis; Moreno, Ignacio; del Mar Sánchez-López, María; Vargas, Asticio; García-Martínez, Pascuala

2014-10-20

Multiple internal reflection effects on the optical modulation of a commercial reflective parallel-aligned liquid-crystal on silicon (PAL-LCoS) spatial light modulator (SLM) are analyzed. The display is illuminated with different wavelengths and different angles of incidence. Non-negligible Fabry-Perot (FP) effect is observed due to the sandwiched LC layer structure. A simplified physical model that quantitatively accounts for the observed phenomena is proposed. It is shown how the expected pure phase modulation response is substantially modified in the following aspects: 1) a coupled amplitude modulation, 2) a non-linear behavior of the phase modulation, 3) some amount of unmodulated light, and 4) a reduction of the effective phase modulation as the angle of incidence increases. Finally, it is shown that multiple reflections can be useful since the effect of a displayed diffraction grating is doubled on a beam that is reflected twice through the LC layer, thus rendering gratings with doubled phase modulation depth.

Optical simulations for design, alignment, and performance prediction of silicon pore optics for the ATHENA x-ray telescope (Conference Presentation)

NASA Astrophysics Data System (ADS)

Spiga, D.; Della Monica Ferreira, D.; Shortt, B.; Bavdaz, M.; Bergback Knudsen, E.; Bianucci, G.; Christensen, F.; Civitani, M.; Collon, M.; Conconi, P.; Fransen, S.; Marioni, F.; Massahi, S.; Pareschi, G.; Salmaso, B.; Jegers, A. S.; Tayabaly, K.; Valsecchi, G.; Westergaard, N.; Wille, E.

2017-09-01

The ATHENA X-ray observatory is a large-class ESA approved mission, with launch scheduled in 2028. The technology of silicon pore optics (SPO) was selected as baseline to assemble ATHENA's optic with hundreds of mirror modules, obtained by stacking wedged and ribbed silicon wafer plates onto silicon mandrels to form the Wolter-I configuration. In the current configuration, the optical assembly has a 3 m diameter and a 2 m2 effective area at 1 keV, with a required angular resolution of 5 arcsec. The angular resolution that can be achieved is chiefly the combination of 1) the focal spot size determined by the pore diffraction, 2) the focus degradation caused by surface and profile errors, 3) the aberrations introduced by the misalignments between primary and secondary segments, 4) imperfections in the co-focality of the mirror modules in the optical assembly. A detailed simulation of these aspects is required in order to assess the fabrication and alignment tolerances; moreover, the achievable effective area and angular resolution depend on the mirror module design. Therefore, guaranteeing these optical performances requires: a fast design tool to find the most performing solution in terms of mirror module geometry and population, and an accurate point spread function simulation from local metrology and positioning information. In this paper, we present the results of simulations in the framework of ESA-financed projects (SIMPOSiuM, ASPHEA, SPIRIT), in preparation of the ATHENA X-ray telescope, analyzing the mentioned points: 1) we deal with a detailed description of diffractive effects in an SPO mirror module, 2) we show ray-tracing results including surface and profile defects of the reflective surfaces, 3) we assess the effective area and angular resolution degradation caused by alignment errors between SPO mirror module's segments, and 4) we simulate the effects of co-focality errors in X-rays and in the UV optical bench used to study the mirror module alignment and integration.

Silicon modulators with optimized vertical PN junctions for high-modulation-efficiency and low-loss in the O-band

NASA Astrophysics Data System (ADS)

Ang, Thomas Y. L.; Png, Ching Eng; Lim, Soon Thor; Ong, Jun Rong

2018-02-01

Silicon modulators based on the carrier depletion mechanism are extensively used in recent years for high-speed data transmission. Lateral PN junctions are the most common electro-optical phase shifters for silicon Mach-Zehnder modulators (MZMs) due to its ease of fabrication. They have a relatively high DC VπLπ of around 2.5 V.cm in the Oband. An alternative approach is to design and optimize vertical PN junctions for lower DC VπLπ, which is currently lacking in the literature for silicon MZMs that operates using carrier depletion mechanism in the O-band. In this work, we look into the design and optimization of silicon phase shifters based on vertical PN junctions for high-modulationefficiency with VπLπ <= 1 V.cm, while meeting the stringent low loss budget of <= 1 dB/mm for data communication in the O-band. This is achieved by varying the offsets of the vertical PN junction with respect to different doping concentrations (2e17/cm3 - 3e18/cm3 ) near the depletion region. Different types of doping schemes are explored and optimized. Our optimized vertical PN junction designs are predicted to give low DC VπLπ of 0.26-0.5 V.cm for low DC reverse bias of >= -2V and low propagation loss of <= 1dB/mm, resulting in α.VπLπ = 1.7 for the best designs, which to the best of our knowledge, is the lowest α.VπLπ at the O-band to date. Electrical and optical modeling are based on our in-house proprietary software that is able to perform both optical and electrical simulations without loss of data fidelity.

Proceedings of the 22nd Project Integration Meeting

NASA Technical Reports Server (NTRS)

1983-01-01

This report describes progress made by the Flat-Plate Solar Array Project during the period January to September 1983. It includes reports on silicon sheet growth and characterization, module technology, silicon material, cell processing and high-efficiency cells, environmental isolation, engineering sciences, module performance and failure analysis and project analysis and integration. It includes a report on, and copies of visual presentations made at the 22nd Project Integration Meeting held at Pasadena, California, on September 28 and 29, 1983.

Integrate Thermal Modules for Cooling Silicon and Silicon Carbide Power Modules

DTIC Science & Technology

2007-06-01

currently valid OMB control number. 1 . REPORT DATE 11 JUN 2007 2 . REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Integrate Thermal...vehicle operation as follows: 1 ) Normal Operation at High Speed 2 ) Normal Operation at Low Speed 3) Acceleration at High Speed 4) Acceleration at Low...diodes. For a basis of comparing the performance of the ITMs, we are using the Semikron 100 kW SKAI inverter (fig 1 ) to quantify and generate

Thermally tunable silicon racetrack resonators with ultralow tuning power.

PubMed

Dong, Po; Qian, Wei; Liang, Hong; Shafiiha, Roshanak; Feng, Dazeng; Li, Guoliang; Cunningham, John E; Krishnamoorthy, Ashok V; Asghari, Mehdi

2010-09-13

We present thermally tunable silicon racetrack resonators with an ultralow tuning power of 2.4 mW per free spectral range. The use of free-standing silicon racetrack resonators with undercut structures significantly enhances the tuning efficiency, with one order of magnitude improvement of that for previously demonstrated thermo-optic devices without undercuts. The 10%-90% switching time is demonstrated to be ~170 µs. Such low-power tunable micro-resonators are particularly useful as multiplexing devices and wavelength-tunable silicon microcavity modulators.

The Increase in Mannose Receptor Recycling Favors Arginase Induction and Trypanosoma Cruzi Survival in Macrophages

PubMed Central

Garrido, Vanina V.; Dulgerian, Laura R.; Stempin, Cinthia C.; Cerbán, Fabio M.

2011-01-01

The macrophage mannose receptor (MR) is a pattern recognition receptor of the innate immune system that binds to microbial structures bearing mannose, fucose and N-acetylglucosamine on their surface. Trypanosoma cruzi antigen cruzipain (Cz) is found in the different developmental forms of the parasite. This glycoprotein has a highly mannosylated C-terminal domain that participates in the host-antigen contact. Our group previously demonstrated that Cz-macrophage (Mo) interaction could modulate the immune response against T. cruzi through the induction of a preferential metabolic pathway. In this work, we have studied in Mo the role of MR in arginase induction and in T. cruzi survival using different MR ligands. We have showed that pre-incubation of T. cruzi infected cells with mannose-Bovine Serum Albumin (Man-BSA, MR specific ligand) biased nitric oxide (NO)/urea balance towards urea production and increased intracellular amastigotes growth. The study of intracellular signals showed that pre-incubation with Man-BSA in T. cruzi J774 infected cells induced down-regulation of JNK and p44/p42 phosphorylation and increased of p38 MAPK phosphorylation. These results are coincident with previous data showing that Cz also modifies the MAPK phosphorylation profile induced by the parasite. In addition, we have showed by confocal microscopy that Cz and Man-BSA enhance MR recycling. Furthermore, we studied MR behavior during T. cruzi infection in vivo. MR was up-regulated in F4/80+ cells from T. cruzi infected mice at 13 and 15 days post infection. Besides, we investigated the effect of MR blocking antibody in T. cruzi infected peritoneal Mo. Arginase activity and parasite growth were decreased in infected cells pre-incubated with anti-MR antibody as compared with infected cells treated with control antibody. Therefore, we postulate that during T. cruzi infection, Cz may contact with MR, increasing MR recycling which leads to arginase activity up-regulation and intracellular parasite growth. PMID:22110379

Off-axis holographic lens spectrum-splitting photovoltaic system for direct and diffuse solar energy conversion.

PubMed

Vorndran, Shelby D; Chrysler, Benjamin; Wheelwright, Brian; Angel, Roger; Holman, Zachary; Kostuk, Raymond

2016-09-20

This paper describes a high-efficiency, spectrum-splitting photovoltaic module that uses an off-axis volume holographic lens to focus and disperse incident solar illumination to a rectangular shaped high-bandgap indium gallium phosphide cell surrounded by strips of silicon cells. The holographic lens design allows efficient collection of both direct and diffuse illumination to maximize energy yield. We modeled the volume diffraction characteristics using rigorous coupled-wave analysis, and simulated system performance using nonsequential ray tracing and PV cell data from the literature. Under AM 1.5 illumination conditions the simulated module obtained a 30.6% conversion efficiency. This efficiency is a 19.7% relative improvement compared to the more efficient cell in the system (silicon). The module was also simulated under a typical meteorological year of direct and diffuse irradiance in Tucson, Arizona, and Seattle, Washington. Compared to a flat panel silicon module, the holographic spectrum splitting module obtained a relative improvement in energy yield of 17.1% in Tucson and 14.0% in Seattle. An experimental proof-of-concept volume holographic lens was also fabricated in dichromated gelatin to verify the main characteristics of the system. The lens obtained an average first-order diffraction efficiency of 85.4% across the aperture at 532 nm.

Performance degradation of grid-tied photovoltaic modules in a hot-dry climatic condition

NASA Astrophysics Data System (ADS)

Suleske, Adam; Singh, Jaspreet; Kuitche, Joseph; Tamizh-Mani, Govindasamy

2011-09-01

The crystalline silicon photovoltaic (PV) modules under open circuit conditions typically degrade at a rate of about 0.5% per year. However, it is suspected that the modules in an array level may degrade, depending on equipment/frame grounding and array grounding, at higher rates because of higher string voltage and increased module mismatch over the years of operation in the field. This paper compares and analyzes the degradation rates of grid-tied photovoltaic modules operating over 10-17 years in a desert climatic condition of Arizona. The nameplate open-circuit voltages of the arrays ranged between 400 and 450 V. Six different types/models of crystalline silicon modules with glass/glass and glass/polymer constructions were evaluated. About 1865 modules were inspected using an extended visual inspection checklist and infrared (IR) scanning. The visual inspection checklist included encapsulant discoloration, cell/interconnect cracks, delamination and corrosion. Based on the visual inspection and IR studies, a large fraction of these modules were identified as allegedly healthy and unhealthy modules and they were electrically isolated from the system for currentvoltage (I-V) measurements of individual modules. The annual degradation rate for each module type is determined based on the I-V measurements.

High speed analog-to-digital conversion with silicon photonics

NASA Astrophysics Data System (ADS)

Holzwarth, C. W.; Amatya, R.; Araghchini, M.; Birge, J.; Byun, H.; Chen, J.; Dahlem, M.; DiLello, N. A.; Gan, F.; Hoyt, J. L.; Ippen, E. P.; Kärtner, F. X.; Khilo, A.; Kim, J.; Kim, M.; Motamedi, A.; Orcutt, J. S.; Park, M.; Perrott, M.; Popovic, M. A.; Ram, R. J.; Smith, H. I.; Zhou, G. R.; Spector, S. J.; Lyszczarz, T. M.; Geis, M. W.; Lennon, D. M.; Yoon, J. U.; Grein, M. E.; Schulein, R. T.; Frolov, S.; Hanjani, A.; Shmulovich, J.

2009-02-01

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.

FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

PubMed

Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

2010-09-27

A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

The U.S. and Japanese amorphous silicon technology programs A comparison

NASA Technical Reports Server (NTRS)

Shimada, K.

1984-01-01

The U.S. Department of Energy/Solar Energy Research Institute Amorphous Silicon (a-Si) Solar Cell Program performs R&D on thin-film hydrogenated amorphous silicon for eventual development of stable amorphous silicon cells with 12 percent efficiency by 1988. The Amorphous Silicon Solar Cell Program in Japan is sponsored by the Sunshine Project to develop an alternate energy technology. While the objectives of both programs are to eventually develop a-Si photovoltaic modules and arrays that would produce electricity to compete with utility electricity cost, the U.S. program approach is research oriented and the Japanese is development oriented.

Photonic-assisted microwave signal multiplication and modulation using a silicon Mach–Zehnder modulator

PubMed Central

Long, Yun; Zhou, Linjie; Wang, Jian

2016-01-01

Photonic generation of microwave signal is obviously attractive for many prominent advantages, such as large bandwidth, low loss, and immunity to electromagnetic interference. Based on a single integrated silicon Mach–Zehnder modulator (MZM), we propose and experimentally demonstrate a simple and compact photonic scheme to enable frequency-multiplicated microwave signal. Using the fabricated integrated MZM, we also demonstrate the feasibility of microwave amplitude-shift keying (ASK) modulation based on integrated photonic approach. In proof-of-concept experiments, 2-GHz frequency-doubled microwave signal is generated using a 1-GHz driving signal. 750-MHz/1-GHz frequency-tripled/quadrupled microwave signals are obtained with a driving signal of 250 MHz. In addition, a 50-Mb/s binary amplitude coded 1-GHz microwave signal is also successfully generated. PMID:26832305

Monolithic amorphous silicon modules on continuous polymer substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grimmer, D.P.

This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience canmore » increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.« less

10 Gb/s operation of photonic crystal silicon optical modulators.

PubMed

Nguyen, Hong C; Sakai, Yuya; Shinkawa, Mizuki; Ishikura, Norihiro; Baba, Toshihiko

2011-07-04

We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L < 0.056 V∙cm. Optical modulation is demonstrated by electrically driving the device with a 2(31) - 1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

Pattern manipulation via on-chip phase modulation between orbital angular momentum beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Huanlu; School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LP; Strain, Michael J.

2015-08-03

An integrated approach to thermal modulation of relative phase between two optical vortices with opposite chirality has been demonstrated on a silicon-on-insulator substrate. The device consists of a silicon-integrated optical vortex emitter and a phase controlled 3 dB coupler. The relative phase between two optical vortices can be actively modulated on chip by applying a voltage on the integrated heater. The phase shift is shown to be linearly proportional to applied electrical power, and the rotation angle of the interference pattern is observed to be inversely proportional to topological charge. This scheme can be used in lab-on-chip, communications and sensing applications.more » It can be intentionally implemented with other modulation elements to achieve more complicated applications.« less

Stress studies in EFG

NASA Technical Reports Server (NTRS)

1984-01-01

Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200 C was started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while regions of high dislocation density (approx. 5 x 10(6)/cm(2)) occur in bands in a number of places. Addition measurements of stress distributions in EFG material were obtained at the University of Illinois using shadow-Moire interferometry.

Crystalline-silicon reliability lessons for thin-film modules

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1985-01-01

The reliability of crystalline silicon modules has been brought to a high level with lifetimes approaching 20 years, and excellent industry credibility and user satisfaction. The transition from crystalline modules to thin film modules is comparable to the transition from discrete transistors to integrated circuits. New cell materials and monolithic structures will require new device processing techniques, but the package function and design will evolve to a lesser extent. Although there will be new encapsulants optimized to take advantage of the mechanical flexibility and low temperature processing features of thin films, the reliability and life degradation stresses and mechanisms will remain mostly unchanged. Key reliability technologies in common between crystalline and thin film modules include hot spot heating, galvanic and electrochemical corrosion, hail impact stresses, glass breakage, mechanical fatigue, photothermal degradation of encapsulants, operating temperature, moisture sorption, circuit design strategies, product safety issues, and the process required to achieve a reliable product from a laboratory prototype.

Low-Cost CdTe/Silicon Tandem Solar Cells

DOE PAGES

Tamboli, Adele C.; Bobela, David C.; Kanevce, Ana; ...

2017-09-06

Achieving higher photovoltaic efficiency in single-junction devices is becoming increasingly difficult, but tandem modules offer the possibility of significant efficiency improvements. By device modeling we show that four-terminal CdTe/Si tandem solar modules offer the prospect of 25%-30% module efficiency, and technoeconomic analysis predicts that these efficiency gains can be realized at costs per Watt that are competitive with CdTe and Si single junction alternatives. The cost per Watt of the modeled tandems is lower than crystalline silicon, but slightly higher than CdTe alone. But, these higher power modules reduce area-related balance of system costs, providing increased value especially in area-constrainedmore » applications. This avenue for high-efficiency photovoltaics enables improved performance on a near-term timeframe, as well as a path to further reduced levelized cost of electricity as module and cell processes continue to advance.« less

Some tradeoffs in ingot shaping and price of solar photovoltaic modules

NASA Technical Reports Server (NTRS)

Daud, T.

1982-01-01

Growth of round ingots is cost-effective for sheets but leaves unused space when round cells are packed into a module. This reduces the packing efficiency, which approaches 95% for square cells, to about 78% and reduces the conversion efficiency of the module by the same ratio. Shaping these ingots into squares with regrowth of cut silicon improves the packing factor, but increases growth cost. The cost impact on solar cell modules was determined by considering shaping ingots in stages from full round to complete square. The sequence of module production with relevant price allocation guidelines is outlined. The severe penalties in add-on price due to increasing slice thickness and kerf are presented. Trade-offs between advantages of recycling silicon and shaping costs are developed for different slicing scenarios. It is shown that shaping results in cost saving of up to 21% for a 15 cm dia. ingot.

Low-Cost CdTe/Silicon Tandem Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tamboli, Adele C.; Bobela, David C.; Kanevce, Ana

Achieving higher photovoltaic efficiency in single-junction devices is becoming increasingly difficult, but tandem modules offer the possibility of significant efficiency improvements. By device modeling we show that four-terminal CdTe/Si tandem solar modules offer the prospect of 25%-30% module efficiency, and technoeconomic analysis predicts that these efficiency gains can be realized at costs per Watt that are competitive with CdTe and Si single junction alternatives. The cost per Watt of the modeled tandems is lower than crystalline silicon, but slightly higher than CdTe alone. But, these higher power modules reduce area-related balance of system costs, providing increased value especially in area-constrainedmore » applications. This avenue for high-efficiency photovoltaics enables improved performance on a near-term timeframe, as well as a path to further reduced levelized cost of electricity as module and cell processes continue to advance.« less

Laser-induced thermal coagulation enhances skin uptake of topically applied compounds.

PubMed

Haak, C S; Hannibal, J; Paasch, U; Anderson, R R; Haedersdal, M

2017-08-01

Ablative fractional laser (AFL) generates microchannels in skin surrounded by a zone of thermally altered tissue, termed the coagulation zone (CZ). The thickness of CZ varies according to applied wavelength and laser settings. It is well-known that AFL channels facilitate uptake of topically applied compounds, but the importance of CZ is unknown. Franz Cells were used to investigate skin uptake and permeation of fluorescent labeled polyethylene glycols (PEGs) with mean molecular weights (MW) of 350, 1,000, and 5,000 Da. Microchannels with CZ thicknesses ranging from 0 to 80 μm were generated from micro-needles (0 μm, CZ-0), and AFL (10,600 nm) applied to -80°C deep frozen skin (20 μm, CZ-20) and skin equilibrated to room temperature (80 μm, CZ-80). Channels penetrated into similar mid-dermal skin depths of 600-700 μm, and number of channels per skin area was similar. At 4 hours incubation, skin uptake of PEGs into CZ and dermis was evaluated by fluorescence microscopy at specific skin depths of 150, 400, and 1,000 μm and the transcutaneous permeation was quantified by fluorescence of receptor fluids. Overall, the highest uptake of PEGs was reached through microchannels surrounded by CZ compared to channels with no CZ (CZ-20 and CZ-80>CZ-0).The thickness of CZ affected PEG distribution in skin. A thin CZ-20 favored significantly higher mean fluorescence intensities inside CZ areas compared to CZ-80 (PEG 350, 1,000, and 5,000; P < 0.001). In dermis, the uptake through CZ-20 channels was significantly higher than through CZ-80 and CZ-0 at all skin depths (PEG 350, 1,000 and 5,000, 150-1,000 μm; P < 0.001). Correspondingly, transcutaneous permeation of PEG 350 was highest in CZ-20 compared to CZ-80 and CZ-0 samples (P < 0.001). Permeation of larger molecules (PEG 1,000 and PEG 5,000) was generally low. Uptake of topical compounds is higher through microchannels surrounded by a CZ than without a CZ. Moreover, CZ thickness influences PEG distribution, with highest PEG uptake achieved from microchannels surrounded by a thin CZ. Lasers Surg. Med. 49:582-591, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Self-aligned nanoforest in silicon nanowire for sensitive conductance modulation.

PubMed

Seol, Myeong-Lok; Ahn, Jae-Hyuk; Choi, Ji-Min; Choi, Sung-Jin; Choi, Yang-Kyu

2012-11-14

A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used.

User handbook for block IV silicon solar cell modules

NASA Technical Reports Server (NTRS)

Smokler, M. I.

1982-01-01

The essential electrical and mechanical characteristics of block 4 photovoltaic solar cell modules are described. Such module characteristics as power output, nominal operating voltage, current-voltage characteristics, nominal operating cell temperature, and dimensions are tabulated. The limits of the environmental and other stress tests to which the modules are subjected are briefly described.

Nanostructured silicon for thermoelectric

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Method for one-to-one polishing of silicon nitride and silicon oxide

NASA Technical Reports Server (NTRS)

Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

2009-01-01

The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

Silicon Heterojunction System Field Performance

DOE PAGES

Jordan, Dirk C.; Deline, Chris; Johnston, Steve; ...

2017-11-17

A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc, thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performancemore » changes are fairly uniform across the module, indicating changes occur primarily within the cells.« less

Hot-spot durability testing of amorphous cells and modules

NASA Technical Reports Server (NTRS)

Gonzalez, Charles; Jetter, Elizabeth

1985-01-01

This paper discusses the results of a study to determine the hot-spot susceptibility of amorphous-silicon (a-Si) cells and modules, and to provide guidelines for reducing that susceptibility. Amorphous-Si cells are shown to have hot-spot susceptibility levels similar to crystalline-silicon (C-Si) cells. This premise leads to the fact that the same general guidelines must apply to protecting a-Si cells from hot-spot stressing that apply to C-Si cells. Recommendations are made on ways of reducing a-Si module hot-spot susceptibility including the traditional method of using bypass diodes and a new method unique to thin-film cells, limiting the string current by limiting cell area.

49.6 Gb/s direct detection DMT transmission over 40 km single mode fibre using an electrically packaged silicon photonic modulator.

PubMed

Lacava, C; Cardea, I; Demirtzioglou, I; Khoja, A E; Ke, Li; Thomson, D J; Ruan, X; Zhang, F; Reed, G T; Richardson, D J; Petropoulos, P

2017-11-27

We present the characterization of a silicon Mach-Zehnder modulator with electrical packaging and show that it exhibits a large third-order intermodulation spurious-free dynamic range (> 100 dB Hz 2/3 ). This characteristic renders the modulator particularly suitable for the generation of high spectral efficiency discrete multi-tone signals and we experimentally demonstrate a single-channel, direct detection transmission system operating at 49.6 Gb/s, exhibiting a baseband spectral efficiency of 5 b/s/Hz. Successful transmission is demonstrated over various lengths of single mode fibre up to 40 km, without the need of any amplification or dispersion compensation.

Construction and first beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

NASA Astrophysics Data System (ADS)

Jain, S.

2017-03-01

The High Granularity Calorimeter (HGCAL) is the technology choice of the CMS collaboration for the endcap calorimetry upgrade planned to cope with the harsh radiation and pileup environment at the High Luminosity-LHC . The HGCAL is realized as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5-01. cm2 interspersed with absorbers made from tungsten and copper to form a highly compact and granular device. Prototype modules, based on hexagonal silicon pad sensors, with 128 channels, have been constructed and tested in beams at FNAL and at CERN. The modules include many of the features required for this challenging detector, including a PCB glued directly to the sensor, using through-hole wire-bonding for signal readout and 5 mm spacing between layers—including the front-end electronics and all services. Tests in 2016 have used an existing front-end chip —Skiroc2 (designed for the CALICE experiment for ILC). We present results from first tests of these modules both in the laboratory and with beams of electrons, pions and protons, including noise performance, calibration with mips and electron signals.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Processing technology for high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Keavney, C. J.

1985-01-01

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Control of Heat and Charge Transport in Nanostructured Hybrid Materials

DTIC Science & Technology

2015-07-21

measurements in our groups have yielded device ZT values of 0.4 on thermoelectric modules consisting of vertically oriented silicon nanowires . This is... nanowires with aspect ratio’s exceeding 10,000. Temperature differences as high as 800 °C are achievable for both types. The bulk nanostructured...thermal conductivity of the silicon nanostructures. Specifically, experiments on an array of 20 nm diameter vertically oriented silicon nanowires have

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

PubMed

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector

NASA Astrophysics Data System (ADS)

Adam, W.; Bergauer, T.; Brondolin, E.; Dragicevic, M.; Friedl, M.; Frühwirth, R.; Hoch, M.; Hrubec, J.; König, A.; Steininger, H.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Lauwers, J.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Beghin, D.; Brun, H.; Clerbaux, B.; De Lentdecker, G.; Delannoy, H.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, T.; Léonard, A.; Luetic, J.; Maerschalk, T.; Marinov, A.; Postiau, N.; Randle-Conde, A.; Seva, T.; Vanlaer, P.; Vannerom, D.; Yonamine, R.; Wang, Q.; Yang, Y.; Zenoni, F.; Zhang, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; De Clercq, J.; D'Hondt, J.; Deroover, K.; Lowette, S.; Moortgat, S.; Moreels, L.; Python, Q.; Skovpen, K.; Van Mulders, P.; Van Parijs, I.; Bakhshiansohi, H.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; Delaere, C.; Delcourt, M.; De Visscher, S.; Francois, B.; Giammanco, A.; Jafari, A.; Cabrera Jamoulle, J.; De Favereau De Jeneret, J.; Komm, M.; Krintiras, G.; Lemaitre, V.; Magitteri, A.; Mertens, A.; Michotte, D.; Musich, M.; Piotrzkowski, K.; Quertenmont, L.; Szilasi, N.; Vidal Marono, M.; Wertz, S.; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G. H.; Härkönen, J.; Lampén, T.; Luukka, P.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Baulieu, G.; Boudoul, G.; Caponetto, L.; Combaret, C.; Contardo, D.; Dupasquier, T.; Gallbit, G.; Lumb, N.; Mirabito, L.; Perries, S.; Vander Donckt, M.; Viret, S.; Agram, J.-L.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.-M.; Chabert, E.; Chanon, N.; Charles, L.; Conte, E.; Fontaine, J.-Ch.; Gross, L.; Hosselet, J.; Jansova, M.; Tromson, D.; Autermann, C.; Feld, L.; Karpinski, W.; Kiesel, K. M.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Rauch, M.; Schael, S.; Schomakers, C.; Schulz, J.; Schwering, G.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Pooth, O.; Stahl, A.; Aldaya, M.; Asawatangtrakuldee, C.; Beernaert, K.; Bertsche, D.; Contreras-Campana, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Gallo, E.; Garay Garcia, J.; Hansen, K.; Haranko, M.; Harb, A.; Hauk, J.; Keaveney, J.; Kalogeropoulos, A.; Kleinwort, C.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Pitzl, D.; Reichelt, O.; Savitskyi, M.; Schuetze, P.; Walsh, R.; Zuber, A.; Biskop, H.; Buhmann, P.; Centis-Vignali, M.; Garutti, E.; Haller, J.; Hoffmann, M.; Klanner, R.; Matysek, M.; Perieanu, A.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schwandt, J.; Sonneveld, J.; Steinbrück, G.; Vormwald, B.; Wellhausen, J.; Abbas, M.; Amstutz, C.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Freund, B.; Hartmann, F.; Heindl, S.; Husemann, U.; Kornmeyer, A.; Kudella, S.; Muller, Th.; Printz, M.; Simonis, H. J.; Steck, P.; Weber, M.; Weiler, Th.; Anagnostou, G.; Asenov, P.; Assiouras, P.; Daskalakis, G.; Kyriakis, A.; Loukas, D.; Paspalaki, L.; Siklér, F.; Veszprémi, V.; Bhardwaj, A.; Dalal, R.; Jain, G.; Ranjan, K.; Dutta, S.; Chowdhury, S. Roy; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; Creanza, D.; De Palma, M.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Saizu, M. A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Latino, G.; Lenzi, P.; Meschini, M.; Paoletti, S.; Russo, L.; Scarlini, E.; Sguazzoni, G.; Strom, D.; Viliani, L.; Ferro, F.; Lo Vetere, M.; Robutti, E.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Pedrini, D.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Pozzobon, N.; Tosi, M.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Riceputi, E.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Alunni Solestizi, L.; Biasini, M.; Bilei, G. M.; Cecchi, C.; Checcucci, B.; Ciangottini, D.; Fanò, L.; Gentsos, C.; Ionica, M.; Leonardi, R.; Manoni, E.; Mantovani, G.; Marconi, S.; Mariani, V.; Menichelli, M.; Modak, A.; Morozzi, A.; Moscatelli, F.; Passeri, D.; Placidi, P.; Postolache, V.; Rossi, A.; Saha, A.; Santocchia, A.; Storchi, L.; Spiga, D.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Borrello, L.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Magazzu, G.; Martini, L.; Mazzoni, E.; Messineo, A.; Moggi, A.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Bellan, R.; Costa, M.; Covarelli, R.; Da Rocha Rolo, M.; Demaria, N.; Rivetti, A.; Dellacasa, G.; Mazza, G.; Migliore, E.; Monteil, E.; Pacher, L.; Ravera, F.; Solano, A.; Fernandez, M.; Gomez, G.; Jaramillo Echeverria, R.; Moya, D.; Gonzalez Sanchez, F. J.; Vila, I.; Virto, A. L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Bonnaud, J.; Caratelli, A.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Auria, A.; Detraz, S.; Deyrail, D.; Dondelewski, O.; Faccio, F.; Frank, N.; Gadek, T.; Gill, K.; Honma, A.; Hugo, G.; Jara Casas, L. M.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Krammer, M.; Lenoir, P.; Mannelli, M.; Marchioro, A.; Marconi, S.; Mersi, S.; Martina, S.; Michelis, S.; Moll, M.; Onnela, A.; Orfanelli, S.; Pavis, S.; Peisert, A.; Pernot, J.-F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; di Calafiori, D.; Casal, B.; Berger, P.; Djambazov, L.; Donega, M.; Grab, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Meinhard, M.; Perozzi, L.; Roeser, U.; Starodumov, A.; Tavolaro, V.; Wallny, R.; Zhu, D.; Amsler, C.; Bösiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; de Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.-C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.-H.; Dietz, C.; Grundler, U.; Hou, W.-S.; Lu, R.-S.; Moya, M.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; Seif El Nasr-Storey, S.; Cole, J.; Hoad, C.; Hobson, P.; Morton, A.; Reid, I. D.; Auzinger, G.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; James, T.; Magnan, A.-M.; Pesaresi, M.; Raymond, D. M.; Uchida, K.; Braga, D.; Coughlan, J. A.; Harder, K.; Jones, L.; Ilic, J.; Murray, P.; Prydderch, M.; Tomalin, I. R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Olmedo, M.; Si, W.; Yates, B. R.; Gerosa, R.; Sharma, V.; Vartak, A.; Yagil, A.; Zevi Della Porta, G.; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; Mullin, S.; Qu, H.; White, D.; Dominguez, A.; Bartek, R.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Apresyan, A.; Bolla, G.; Burkett, K.; Butler, J. N.; Cheung, H. W. K.; Chramowicz, J.; Christian, D.; Cooper, W. E.; Deptuch, G.; Derylo, G.; Gingu, C.; Grünendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Kahlid, F.; Lei, C. M.; Lipton, R.; Lopes De Sá, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Schneider, B.; Sellberg, G.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Berry, D. R.; Chen, X.; Ennesser, L.; Evdokimov, A.; Evdokimov, O.; Gerber, C. E.; Hofman, D. J.; Makauda, S.; Mills, C.; Sandoval Gonzalez, I. D.; Alimena, J.; Antonelli, L. J.; Francis, B.; Hart, A.; Hill, C. S.; Parashar, N.; Stupak, J.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D. H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Wilson, G.; Ivanov, A.; Mendis, R.; Mitchell, T.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J. G.; Cremaldi, L. M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Claes, D. R.; Fangmeier, C.; Gonzalez Suarez, R.; Monroy, J.; Siado, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Gershtein, Y.; Halkiadakis, E.; Kyriacou, S.; Lath, A.; Nash, K.; Osherson, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Norberg, S.; Ramirez Vargas, J. E.; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kharchilava, A.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; McDermott, K.; Mirman, N.; Rinkevicius, A.; Ryd, A.; Salvati, E.; Skinnari, L.; Soffi, L.; Tao, Z.; Thom, J.; Tucker, J.; Zientek, M.; Akgün, B.; Ecklund, K. M.; Kilpatrick, M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Covarelli, R.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Patel, R.; Perloff, A.; Ulmer, K. A.; Delannoy, A. G.; D'Angelo, P.; Johns, W.

2018-03-01

A new CMS Tracker is under development for operation at the High Luminosity LHC from 2026 onwards. It includes an outer tracker based on dedicated modules that will reconstruct short track segments, called stubs, using spatially coincident clusters in two closely spaced silicon sensor layers. These modules allow the rejection of low transverse momentum track hits and reduce the data volume before transmission to the first level trigger. The inclusion of tracking information in the trigger decision is essential to limit the first level trigger accept rate. A customized front-end readout chip, the CMS Binary Chip (CBC), containing stub finding logic has been designed for this purpose. A prototype module, equipped with the CBC chip, has been constructed and operated for the first time in a 4 GeemVem/emc positron beam at DESY. The behaviour of the stub finding was studied for different angles of beam incidence on a module, which allows an estimate of the sensitivity to transverse momentum within the future CMS detector. A sharp transverse momentum threshold around 2 emVem/emc was demonstrated, which meets the requirement to reject a large fraction of low momentum tracks present in the LHC environment on-detector. This is the first realistic demonstration of a silicon tracking module that is able to select data, based on the particle's transverse momentum, for use in a first level trigger at the LHC . The results from this test are described here.

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

NASA Astrophysics Data System (ADS)

Seki, Harumi; Kamimuta, Yuuichi; Mitani, Yuichiro

2018-06-01

The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si–H bonds in the SiN x thin films.

The Automated Array Assembly Task of the Low-cost Silicon Solar Array Project, Phase 2

NASA Technical Reports Server (NTRS)

Coleman, M. G.; Grenon, L.; Pastirik, E. M.; Pryor, R. A.; Sparks, T. G.

1978-01-01

An advanced process sequence for manufacturing high efficiency solar cells and modules in a cost-effective manner is discussed. Emphasis is on process simplicity and minimizing consumed materials. The process sequence incorporates texture etching, plasma processes for damage removal and patterning, ion implantation, low pressure silicon nitride deposition, and plated metal. A reliable module design is presented. Specific process step developments are given. A detailed cost analysis was performed to indicate future areas of fruitful cost reduction effort. Recommendations for advanced investigations are included.

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

PubMed Central

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n+ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. PMID:25520602

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

PubMed

Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

NASA Astrophysics Data System (ADS)

Liu, Xin; Gao, Bing; Nakano, Satoshi; Kakimoto, Koichi

2017-09-01

Generation, incorporation, and accumulation of carbon (C) were investigated by transient global simulations of heat and mass transport during the melting process of Czochralski silicon (CZ-Si) crystal growth. Contact reaction between the quartz crucible and graphite susceptor was introduced as an extra origin of C contamination. The contribution of the contact reaction on C accumulation is affected by the back diffusion of C monoxide (CO) from the gap between the gas-guide and the crucible. The effect of the gas-guide coating on C reduction was elucidated by taking the reaction between the silicon carbide (SiC) coating and gaseous Si monoxide (SiO) into account. Application of the SiC coating on the gas-guide could effectively reduce the C contamination because of its higher thermochemical stability relative to that of graphite. Gas flow control on the back diffusion of the generated CO was examined by the parametric study of argon gas flow rate. Generation and back diffusion of CO were both effectively suppressed by the increase in the gas flow rate because of the high Péclet number of species transport. Strategies for C content reduction were discussed by analyzing the mechanisms of C accumulation process. According to the elucidated mechanisms of C accumulation, the final C content depends on the growth duration and contamination flux at the gas/melt interface.

Micro benchtop optics by bulk silicon micromachining

DOEpatents

Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

2000-01-01

Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

Silicon induced systemic defense responses in perennial ryegrass against Magnaporthe oryzae infection

USDA-ARS?s Scientific Manuscript database

Sustainable integrated disease management for gray leaf spot of perennial ryegrass may involve use of plant defense elicitors with compatible traditional fungicides to reduce disease incidence and severity. Silicon (Si) is a potential inducer or modulator of plant defenses against different pathogen...

Silicon based mechanic-photonic wavelength converter for infrared photo-detection

NASA Astrophysics Data System (ADS)

Rudnitsky, Arkady; Agdarov, Sergey; Gulitsky, Konstantin; Zalevsky, Zeev

2017-06-01

In this paper we present a new concept to realize a mechanic-photonic wavelength converter in silicon chip by construction of nanorods and by modulating the input illumination at temporal frequency matched to the mechanic resonance of the nanorods. The use case is to realize an infrared photo detector in silicon which is not based on absorption but rather on the mechanical interaction of the nanorods with the incoming illumination.

Involvement of sulfates from cruzipain, a major antigen of Trypanosoma cruzi, in the interaction with immunomodulatory molecule Siglec-E.

PubMed

Ferrero, Maximiliano R; Heins, Anja M; Soprano, Luciana L; Acosta, Diana M; Esteva, Mónica I; Jacobs, Thomas; Duschak, Vilma G

2016-02-01

In order to investigate the involvement of sulfated groups in the Trypanosoma cruzi host-parasite relationship, we studied the interaction between the major cysteine proteinase of T. cruzi, cruzipain (Cz), a sulfate-containing sialylated molecule and the sialic acid-binding immunoglobulin like lectin-E (Siglec-E). To this aim, ELISA, indirect immunofluorescence assays and flow cytometry, using mouse Siglec-E-Fc fusion molecules and glycoproteins of parasites, were performed. Competition assays verified that the lectins, Maackia amurensis II (Mal II) and Siglec-E-Fc, compete for the same binding sites. Taking into account that Mal II binding remains unaltered by sulfation, we established this lectin as sialylation degree control. Proteins of an enriched microsomal fraction showed the highest binding to Siglec-E as compared with those from the other parasite subcellular fractions. ELISA assays and the affinity purification of Cz by a Siglec-E column confirmed the interaction between both molecules. The significant decrease in binding of Siglec-E-Fc to Cz and to its C-terminal domain (C-T) after desulfation of these molecules suggests that sulfates contribute to the interaction between Siglec-E-Fc and these glycoproteins. Competitive ELISA assays confirmed the involvement of sulfated epitopes in the affinity between Siglec-E and Cz, probably modified by natural protein environment. Interestingly, data from flow cytometry of untreated and chlorate-treated parasites suggested that sulfates are not primary receptors, but enhance the binding of Siglec-E to trypomastigotic forms. Altogether, our findings support the notion that sulfate-containing sialylated glycoproteins interact with Siglec-E, an ortholog protein of human Siglec-9, and might modulate the immune response of the host, favoring parasitemia and persistence of the parasite.

Establishment of a PID Pass/Fail Test for Crystalline Silicon Modules by Examining Field Performance for Five Years: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, Peter L

In an experiment with five module designs and multiple replicas, it is found that crystalline silicon cell modules that can pass a criterion of less than 5 percent power degradation in stress test conditions of 60 degrees Celsius, 85 percent relative humidity (RH), 96 h, and nameplate-rated system voltage bias show no power degradation by potential induced degradation in the range of 4-6 years duration in the Florida, USA environment. This data suggests that this chamber stress level is useful as a pass/fail criterion for PID, and will help ensure against degradation by system voltage stress in Florida, or lessmore » stressful climates, for at least 5 years.« less

SMART- Small Motor AerRospace Technology

NASA Astrophysics Data System (ADS)

Balucani, M.; Crescenzi, R.; Ferrari, A.; Guarrea, G.; Pontetti, G.; Orsini, F.; Quattrino, L.; Viola, F.

2004-11-01

This paper presents the "SMART" (Small Motor AerRospace Tecnology) propulsion system, constituted of microthrusters array realised by semiconductor technology on silicon wafers. SMART system is obtained gluing three main modules: combustion chambers, igniters and nozzles. The module was then filled with propellant and closed by gluing a piece of silicon wafer in the back side of the combustion chambers. The complete assembled module composed of 25 micro- thrusters with a 3 x 5 nozzle is presented. The measurement showed a thrust of 129 mN and impulse of 56,8 mNs burning about 70mg of propellant for the micro-thruster with nozzle and a thrust of 21 mN and impulse of 8,4 mNs for the micro-thruster without nozzle.

Performance degradation and cleaning of photovoltaic arrays

NASA Technical Reports Server (NTRS)

Sheskin, T. J.; Chang, G. C.; Cull, R. C.; Knapp, W. D.

1982-01-01

NASA tests results from an 18 mo program of cleaning silicone-encapsulated and glass fronted solar cell panels in urban and desert environments to examine the effects of cleaning on module performance are reported. The panels were cleaned on weekly, monthly, quarterly, or semi-annual basis, while other panels of the same construction were not cleaned and served as controls. Commercially-available detergents and city water were employed for the tests, and the measurements were maintained of the modules' continuing short-circuit current output. The decay of the output was determined by least square regression analyses. Performance degradation was noticeably less in glass covered, rather than silicone-encapsulated modules which decayed faster in urban than in desert environments. Lower frequency cleanings are recommended where labor costs are high.

40 Gbit/s low-loss silicon optical modulator based on a pipin diode.

PubMed

Ziebell, Melissa; Marris-Morini, Delphine; Rasigade, Gilles; Fédéli, Jean-Marc; Crozat, Paul; Cassan, Eric; Bouville, David; Vivien, Laurent

2012-05-07

40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.

Silicon photonics plasma-modulators with advanced transmission line design.

PubMed

Merget, Florian; Azadeh, Saeed Sharif; Mueller, Juliana; Shen, Bin; Nezhad, Maziar P; Hauck, Johannes; Witzens, Jeremy

2013-08-26

We have investigated two novel concepts for the design of transmission lines in travelling wave Mach-Zehnder interferometer based Silicon Photonics depletion modulators overcoming the analog bandwidth limitations arising from cross-talk between signal lines in push-pull modulators and reducing the linear losses of the transmission lines. We experimentally validate the concepts and demonstrate an E/O -3 dBe bandwidth of 16 GHz with a 4V drive voltage (in dual drive configuration) and 8.8 dB on-chip insertion losses. Significant bandwidth improvements result from suppression of cross-talk. An additional bandwidth enhancement of ~11% results from a reduction of resistive transmission line losses. Frequency dependent loss models for loaded transmission lines and E/O bandwidth modeling are fully verified.

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

PubMed

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Low cost solar array project production process and equipment task. A Module Experimental Process System Development Unit (MEPSDU)

NASA Technical Reports Server (NTRS)

1981-01-01

Technical readiness for the production of photovoltaic modules using single crystal silicon dendritic web sheet material is demonstrated by: (1) selection, design and implementation of solar cell and photovoltaic module process sequence in a Module Experimental Process System Development Unit; (2) demonstration runs; (3) passing of acceptance and qualification tests; and (4) achievement of a cost effective module.

DOE Forms National Center for Photovoltaics

Science.gov Websites

, Georgia, Florida and New Mexico. The alliance also will include the Utility Photovoltaic Group, a testing in partnership with the U.S. photovoltaic industry. For industry that means one-stop shopping for amorphous silicon and cadmium telluride photovoltaic modules, and manufacturing of silicon sheet and

Electrical detection of electron-spin-echo envelope modulations in thin-film silicon solar cells

NASA Astrophysics Data System (ADS)

Fehr, M.; Behrends, J.; Haas, S.; Rech, B.; Lips, K.; Schnegg, A.

2011-11-01

Electrically detected electron-spin-echo envelope modulations (ED-ESEEM) were employed to detect hyperfine interactions between nuclear spins and paramagnetic sites, determining spin-dependent transport processes in multilayer thin-film microcrystalline silicon solar cells. Electrical detection in combination with a modified Hahn-echo sequence was used to measure echo modulations induced by 29Si, 31P, and 1H nuclei weakly coupled to electron spins of paramagnetic sites in the amorphous and microcrystalline solar cell layers. In the case of CE centers in the μc-Si:H i-layer, the absence of 1H ESEEM modulations indicates that the adjacencies of CE centers are depleted from hydrogen atoms. On the basis of this result, we discuss several models for the microscopic origin of the CE center and conclusively assign those centers to coherent twin boundaries inside of crystalline grains in μc-Si:H.

Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

PubMed

Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

2009-01-05

We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

Active graphene-silicon hybrid diode for terahertz waves.

PubMed

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Simulation analysis of a novel high efficiency silicon solar cell

NASA Technical Reports Server (NTRS)

Mokashi, Anant R.; Daud, T.; Kachare, A. H.

1985-01-01

It is recognized that crystalline silicon photovoltaic module efficiency of 15 percent or more is required for cost-effective photovoltaic energy utilization. This level of module efficiency requires large-area encapsulated production cell efficiencies in the range of 18 to 20 percent. Though the theoretical maximum of silicon solar cell efficiency for an idealized case is estimated to be around 30 percent, practical performance of cells to-date are considerably below this limit. This is understood to be largely a consequence of minority carrier losses in the bulk as well as at all surfaces including those under the metal contacts. In this paper a novel device design with special features to reduce bulk and surface recombination losses is evaluated using numerical analysis technique. Details of the numerical model, cell design, and analysis results are presented.

Active graphene–silicon hybrid diode for terahertz waves

PubMed Central

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-01-01

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

NASA Astrophysics Data System (ADS)

Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

2016-05-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

Porous silicon advances in drug delivery and immunotherapy

PubMed Central

Savage, D; Liu, X; Curley, S; Ferrari, M; Serda, RE

2013-01-01

Biomedical applications of porous silicon include drug delivery, imaging, diagnostics and immunotherapy. This review summarizes new silicon particle fabrication techniques, dynamics of cellular transport, advances in the multistage vector approach to drug delivery, and the use of porous silicon as immune adjuvants. Recent findings support superior therapeutic efficacy of the multistage vector approach over single particle drug delivery systems in mouse models of ovarian and breast cancer. With respect to vaccine development, multivalent presentation of pathogen-associated molecular patterns on the particle surface creates powerful platforms for immunotherapy, with the porous matrix able to carry both antigens and immune modulators. PMID:23845260

A silicon-nanowire memory driven by optical gradient force induced bistability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, B.; Institute of Microelectronics, A*STAR; Cai, H., E-mail: caih@ime.a-star.edu.sg

2015-12-28

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

77 FR 63788 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-10-17

... Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's Republic of China: Final... (solar cells) from the People's Republic of China (PRC). The Department further determines that there... Cells, Whether or Not Assembled Into Modules, from the People's Republic of China (Decision Memorandum...

Solar concentrator modules with silicone-onglass Fresnel lens panels and multijunction cells.

PubMed

Rumyantsev, Valery D

2010-04-26

High-efficiency multijunction (MJ) solar cells, being very expensive to manufacture, should only be used in combination with solar concentrators in terrestrial applications. An essential cost reduction of electric power produced by photovoltaic (PV) installations with MJ cells, may be expected by the creation of highly-effective, but inexpensive, elements for optical concentration and sun tracking. This article is an overview of the corresponding approach under development at the Ioffe Physical Technical Institute. The approach to R&D of the solar PV modules is based on the concepts of sunlight concentration by small-aperture area Fresnel lenses and "all-glass" module design. The small-aperture area lenses are arranged as a panel with silicone-on-glass structure where the glass plate serves as the front surface of a module. In turn, high-efficiency InGaP/(In)GaAs/Ge cells are arranged on a rear module panel mounted on a glass plate which functions as a heat sink and integrated protective cover for the cells. The developed PV modules and sun trackers are characterized by simple design, and are regarded as the prototypes for further commercialization.

Electrically-controlled near-field radiative thermal modulator made of graphene-coated silicon carbide plates

NASA Astrophysics Data System (ADS)

Yang, Yue; Wang, Liping

2017-08-01

In this work, we propose a hybrid near-field radiative thermal modulator made of two graphene-covered silicon carbide (SiC) plates separated by a nanometer vacuum gap. The near-field photon tunneling between the emitter and receiver is modulated by changing graphene chemical potentials with symmetrically or asymmetrically applied voltage biases. The radiative heat flux calculated from fluctuational electrodynamics significantly varies with graphene chemical potentials due to tunable near-field coupling strength between graphene plasmons across the vacuum gap. Thermal modulation and switching, which are the key functionalities required for a thermal modulator, are theoretically realized and analyzed. Newly introduced quantities of the modulation factor, the sensitivity factor and switching factor are studied quite extensively in a large parameter range for both graphene chemical potential and vacuum gap distance. This opto-electronic device with faster operating mode, which is in principle only limited by electronics and not by the thermal inertia, will facilitate the practical application of active thermal management, thermal circuits, and thermal computing with photon-based near-field thermal transport.

Cryogenic High Pressure Sensor Module

NASA Technical Reports Server (NTRS)

Chapman, John J. (Inventor); Shams, Qamar A. (Inventor); Powers, William T. (Inventor)

1999-01-01

A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

Spraylon fluorocarbon encapsulation for silicon solar cell arrays

NASA Technical Reports Server (NTRS)

1977-01-01

A development program was performed for evaluating, modifying, and optimizing the Lockheed formulated liquid transparent filmforming Spraylon fluorocarbon protective coating for silicon solar cells and modules. The program objectives were designed to meet the requirements of the low-cost automated solar cell array fabrication process. As part of the study, a computer program was used to establish the limits of the safe working stress in the coated silicon solar cell array system under severe thermal shock.

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.

PubMed

Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D

2017-10-11

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diroll, Benjamin T.; Schramke, Katelyn S.; Guo, Peijun

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective massmore » at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.« less

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

DOE PAGES

Diroll, Benjamin T.; Schramke, Katelyn S.; Guo, Peijun; ...

2017-09-11

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective massmore » at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.« less

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukavin, R. Kh., E-mail: zhur@ipmras.ru; Kovalevsky, K. A.; Orlov, M. L.

2016-11-15

Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO{sub 2} laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by A{sup +} centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.

Performance testing of an off-plane reflection grating and silicon pore optic spectrograph at PANTER

NASA Astrophysics Data System (ADS)

Marlowe, Hannah; McEntaffer, Randall L.; Allured, Ryan; DeRoo, Casey T.; Donovan, Benjamin D.; Miles, Drew M.; Tutt, James H.; Burwitz, Vadim; Menz, Benedikt; Hartner, Gisela D.; Smith, Randall K.; Cheimets, Peter; Hertz, Edward; Bookbinder, Jay A.; Günther, Ramses; Yanson, Alex; Vacanti, Giuseppe; Ackermann, Marcelo

2015-10-01

An x-ray spectrograph consisting of aligned, radially ruled off-plane reflection gratings and silicon pore optics (SPO) was tested at the Max Planck Institute for Extraterrestrial Physics PANTER x-ray test facility. SPO is a test module for the proposed Arcus mission, which will also feature aligned off-plane reflection gratings. This test is the first time two off-plane gratings were actively aligned to each other and with an SPO to produce an overlapped spectrum. We report the performance of the complete spectrograph utilizing the aligned gratings module and plans for future development.

REDUCTION OF CONCENTRATION POLARIZATION IN PERVAPORATION USING VIBRATING MEMBRANE MODULE

EPA Science Inventory

A vibrating membrane module currently marketed for filtration applications was evaluated for the separation of volatile organic compounds (VOCs) from aqueous solutions by pervaporation. Preliminary screening experiments with three VOCs, four silicone membranes, and in the presenc...

Design and development of a work robot to place ATLAS SCT modules onto barrel cylinders

NASA Astrophysics Data System (ADS)

Terada, S.; Kobayashi, H.; Sengoku, H.; Kato, Y.; Hara, K.; Honma, F.; Ikegami, Y.; Iwata, Y.; Kohriki, T.; Kondo, T.; Nakano, I.; Takashima, R.; Tanaka, R.; Ujiie, N.; Unno, Y.; Yasuda, S.

2005-04-01

More than 2000 silicon modules need to be placed and fastened on the ATLAS SCT barrel tracker. A semi-automatic pick-and-place work robot was designed and developed to cope with the module placement for the SCT barrel assembly. We found that this robot could place modules to a mechanical precision of better than 25 μm.

Roadmap on silicon photonics

NASA Astrophysics Data System (ADS)

Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

2016-07-01

Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with predictions of where the field is destined to reach.

Silicon-graphene photonic devices

NASA Astrophysics Data System (ADS)

Yin, Yanlong; Li, Jiang; Xu, Yang; Tsang, Hon Ki; Dai, Daoxin

2018-06-01

Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning. Project supported by the National Major Research and Development Program (No. 2016YFB0402502), the National Natural Science Foundation of China (Nos. 11374263, 61422510, 61431166001, 61474099, 61674127), and the National Key Research and Development Program (No. 2016YFA0200200).

Neuromorphic photonic networks using silicon photonic weight banks.

PubMed

Tait, Alexander N; de Lima, Thomas Ferreira; Zhou, Ellen; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

2017-08-07

Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neural compiler" to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

Proposal for an optical multicarrier generator based on single silicon micro-ring modulator

NASA Astrophysics Data System (ADS)

Bhowmik, Bishanka Brata; Gupta, Sumanta

2015-08-01

We propose an optical multicarrier generation technique using silicon micro-ring modulator (MRM) and analyze the scheme. Numerical studies have been done for three types MRMs having different power coupling coefficients. The proposed scheme is found to generate four optical carriers having 12.5 GHz spacing. According to simulation, the maximum side-mode-suppression ratio (SMSR) of ~16.3 dB with flatness of ~0.2 dB is achieved by using this scheme. The minimum extinction ratio (ER) of the generated carriers is found to be more than 35 dB. We also propose modulator driver circuit to generate RF signal, which is needed to generate multicarrier using MRM. The effect of coupling coefficient on the SMSR of the generated carriers is also investigated.

Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization

DOE PAGES

Harvey, Steven P.; Moseley, John; Norman, Andrew; ...

2018-02-27

We investigated the potential-induced degradation (PID) shunting mechanism in multicrystalline-silicon photovoltaic modules by using a multiscale, multitechnique characterization approach. Both field-stressed modules and laboratory-stressed mini modules were studied. We used photoluminescence, electroluminescence, and dark lock-in thermography imaging to identify degraded areas at the module scale. Small samples were then removed from degraded areas, laser marked, and imaged by scanning electron microscopy. We used simultaneous electron-beam induced current imaging and focused ion beam milling to mark around PID shunts for chemical analysis by time-of-flight secondary-ion mass spectrometry or to isolate individual shunt defects for transmission electron microscopy and atom-probe tomography analysis.more » By spanning a range of 10 orders of magnitude in size, this approach enabled us to investigate the root-cause mechanisms for PID shunting. We observed a direct correlation between recombination active shunts and sodium content. The sodium content in shunted areas peaks at the SiNX/Si interface and is consistently observed at a concentration of 0.1% to 2% in shunted areas. Analysis of samples subjected to PID recovery, either activated by electron beam or thermal effects only, reveals that recovery of isolated shunts correlates with diffusion of sodium out of the structural defects to the silicon surface. We observed the role of oxygen and chlorine in PID shunting and found that those species - although sometimes present in structural defects where PID shunting was observed - do not play a consistent role in PID shunting.« less

Design, fabrication, test, qualification, and price analysis of third generation design solar cell modules

NASA Technical Reports Server (NTRS)

1981-01-01

The fabrication of solar cell modules is detailed with emphasis upon laminating and interconnecting the panels that hold the simicrystalline silicon cells. Design problems and enviromental tests are described as well as performance characteristics.

Swap intensified WDR CMOS module for I2/LWIR fusion

NASA Astrophysics Data System (ADS)

Ni, Yang; Noguier, Vincent

2015-05-01

The combination of high resolution visible-near-infrared low light sensor and moderate resolution uncooled thermal sensor provides an efficient way for multi-task night vision. Tremendous progress has been made on uncooled thermal sensors (a-Si, VOx, etc.). It's possible to make a miniature uncooled thermal camera module in a tiny 1cm3 cube with <1W power consumption. For silicon based solid-state low light CCD/CMOS sensors have observed also a constant progress in terms of readout noise, dark current, resolution and frame rate. In contrast to thermal sensing which is intrinsic day&night operational, the silicon based solid-state sensors are not yet capable to do the night vision performance required by defense and critical surveillance applications. Readout noise, dark current are 2 major obstacles. The low dynamic range at high sensitivity mode of silicon sensors is also an important limiting factor, which leads to recognition failure due to local or global saturations & blooming. In this context, the image intensifier based solution is still attractive for the following reasons: 1) high gain and ultra-low dark current; 2) wide dynamic range and 3) ultra-low power consumption. With high electron gain and ultra low dark current of image intensifier, the only requirement on the silicon image pickup device are resolution, dynamic range and power consumption. In this paper, we present a SWAP intensified Wide Dynamic Range CMOS module for night vision applications, especially for I2/LWIR fusion. This module is based on a dedicated CMOS image sensor using solar-cell mode photodiode logarithmic pixel design which covers a huge dynamic range (> 140dB) without saturation and blooming. The ultra-wide dynamic range image from this new generation logarithmic sensor can be used directly without any image processing and provide an instant light accommodation. The complete module is slightly bigger than a simple ANVIS format I2 tube with <500mW power consumption.

Direct comparison of polymethylmetacrylate (PMMA) and silicone-on-glass (SOG) for Fresnel lenses in concentrating photovoltaics (CPV)

NASA Astrophysics Data System (ADS)

Annen, Hans Philipp; Fu, Ling; Leutz, Ralf; González, Luis; Mbakop, Jehu

2011-09-01

The CPV community is still undecided on one critical issue: what material to use best for Fresnel lens parquets. Reliability and longevity are the most important, but all other properties play roles as well. We have developed and manufactured Fresnel lenses with the two commonly used materials: PMMA (Polymethylmethacrylate) and silicone on glass (SOG). Both lenses are designed for the same optical train for best comparability. This allows for better understanding the pros and cons of the materials and making an informed choice for a specific CPV module. While PMMA lenses are embossed from pre-fab sheets in a hot-cold process, the silicone lenses are cast from a heat-curing silicone rubber at moderate temperatures, reducing the energy consumption. PMMA allows for the inclusion of custom low-profile 3D (2.5D) structures for module assembly and mechanical alignment, a feature not possible in silicone due to its low rigidity. Both lenses suffer from thermal expansion and refractive index change. While PMMA parquets expand isotropically, SOG prisms deform due to the difference of expansion coefficients between the glass and the silicone. SOG lenses are prone to delamination of the silicone film. The adhesive strength of the film to the glass can be measured using a modified blister test that we developed. The results show large difference with different materials and confirm the necessity of controlling this issue closely. While the small thermal expansion of the glass sheets allows for larger parquet sizes, the deformation of the prisms with temperature may cause a performance hit.

Simulation and modeling of silicon pore optics for the ATHENA x-ray telescope

NASA Astrophysics Data System (ADS)

Spiga, D.; Christensen, F. E.; Bavdaz, M.; Civitani, M. M.; Conconi, P.; Della Monica Ferreira, D.; Knudsen, E. B.; Massahi, S.; Pareschi, G.; Salmaso, B.; Shortt, B.; Tayabaly, K.; Westergaard, N. J.; Wille, E.

2016-07-01

The ATHENA X-ray observatory is a large-class ESA approved mission, with launch scheduled in 2028. The technology of silicon pore optics (SPO) was selected as baseline to assemble ATHENA's optic with more than 1000 mirror modules, obtained by stacking wedged and ribbed silicon wafer plates onto silicon mandrels to form the Wolter-I configuration. Even if the current baseline design fulfills the required effective area of 2 m2 at 1 keV on-axis, alternative design solutions, e.g., privileging the field of view or the off-axis angular resolution, are also possible. Moreover, the stringent requirement of a 5 arcsec HEW angular resolution at 1 keV entails very small profile errors and excellent surface smoothness, as well as a precise alignment of the 1000 mirror modules to avoid imaging degradation and effective area loss. Finally, the stray light issue has to be kept under control. In this paper we show the preliminary results of simulations of optical systems based on SPO for the ATHENA X-ray telescope, from pore to telescope level, carried out at INAF/OAB and DTU Space under ESA contract. We show ray-tracing results, including assessment of the misalignments of mirror modules and the impact of stray light. We also deal with a detailed description of diffractive effects expected in an SPO module from UV light, where the aperture diffraction prevails, to X-rays where the surface diffraction plays a major role. Finally, we analyze the results of X-ray tests performed at the BESSY synchrotron, we compare them with surface finishing measurements, and we estimate the expected HEW degradation caused by the X-ray scattering.

Low-cost solar array progress and plans

NASA Astrophysics Data System (ADS)

Callaghan, W. T.

It is pointed out that significant redirection has occurred in the U.S. Department of Energy (DOE) Photovoltaics Program, and thus in the Flat-Plate Solar Array Project (FSA), since the 3rd European Communities Conference. The Silicon Materials Task has now the objective to sponsor theoretical and experimental research on silicon material refinement technology suitable for photovoltaic flat-plate solar arrays. With respect to the hydrochlorination reaction, a process proof of concept was completed through definition of reaction kinetics, catalyst, and reaction characteristics. In connection with the dichlorosilane chemical vapor desposition process, a preliminary design was completed of an experimental process system development unit with a capacity of 100 to 200 MT/yr of Si.Attention is also given to the silicon-sheet formation research area, environmental isolation research, the cell and module formation task, the engineering sciences area, and the module performance and failure analysis area.

Photonic crystal nanocavity assisted rejection ratio tunable notch microwave photonic filter

PubMed Central

Long, Yun; Xia, Jinsong; Zhang, Yong; Dong, Jianji; Wang, Jian

2017-01-01

Driven by the increasing demand on handing microwave signals with compact device, low power consumption, high efficiency and high reliability, it is highly desired to generate, distribute, and process microwave signals using photonic integrated circuits. Silicon photonics offers a promising platform facilitating ultracompact microwave photonic signal processing assisted by silicon nanophotonic devices. In this paper, we propose, theoretically analyze and experimentally demonstrate a simple scheme to realize ultracompact rejection ratio tunable notch microwave photonic filter (MPF) based on a silicon photonic crystal (PhC) nanocavity with fixed extinction ratio. Using a conventional modulation scheme with only a single phase modulator (PM), the rejection ratio of the presented MPF can be tuned from about 10 dB to beyond 60 dB. Moreover, the central frequency tunable operation in the high rejection ratio region is also demonstrated in the experiment. PMID:28067332

Photonic crystal nanocavity assisted rejection ratio tunable notch microwave photonic filter

NASA Astrophysics Data System (ADS)

Long, Yun; Xia, Jinsong; Zhang, Yong; Dong, Jianji; Wang, Jian

2017-01-01

Driven by the increasing demand on handing microwave signals with compact device, low power consumption, high efficiency and high reliability, it is highly desired to generate, distribute, and process microwave signals using photonic integrated circuits. Silicon photonics offers a promising platform facilitating ultracompact microwave photonic signal processing assisted by silicon nanophotonic devices. In this paper, we propose, theoretically analyze and experimentally demonstrate a simple scheme to realize ultracompact rejection ratio tunable notch microwave photonic filter (MPF) based on a silicon photonic crystal (PhC) nanocavity with fixed extinction ratio. Using a conventional modulation scheme with only a single phase modulator (PM), the rejection ratio of the presented MPF can be tuned from about 10 dB to beyond 60 dB. Moreover, the central frequency tunable operation in the high rejection ratio region is also demonstrated in the experiment.

Photonic crystal nanocavity assisted rejection ratio tunable notch microwave photonic filter.

PubMed

Long, Yun; Xia, Jinsong; Zhang, Yong; Dong, Jianji; Wang, Jian

2017-01-09

Driven by the increasing demand on handing microwave signals with compact device, low power consumption, high efficiency and high reliability, it is highly desired to generate, distribute, and process microwave signals using photonic integrated circuits. Silicon photonics offers a promising platform facilitating ultracompact microwave photonic signal processing assisted by silicon nanophotonic devices. In this paper, we propose, theoretically analyze and experimentally demonstrate a simple scheme to realize ultracompact rejection ratio tunable notch microwave photonic filter (MPF) based on a silicon photonic crystal (PhC) nanocavity with fixed extinction ratio. Using a conventional modulation scheme with only a single phase modulator (PM), the rejection ratio of the presented MPF can be tuned from about 10 dB to beyond 60 dB. Moreover, the central frequency tunable operation in the high rejection ratio region is also demonstrated in the experiment.

VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

DTIC Science & Technology

2017-03-01

need of high efficiency with high temperature operation eliminates essentially all laser diode technologies except VCSELs. Therefore scaling of the...CW laser diode and separate modulator. Lower diagram circuitry shows the case for a DML VCSEL. The small gain volume and high speed modulation...speed of the modulator. However the CW laser that is needed for the modulator appears to create a technological roadblock for laser diode platforms

Outdoor module testing and comparison of photovoltaic technologies

NASA Astrophysics Data System (ADS)

Fabick, L. B.; Rifai, R.; Mitchell, K.; Woolston, T.; Canale, J.

A comparison of outdoor test results for several module technologies is presented. The technologies include thin-film silicon:hydrogen alloys (TFS), TFS modules with semitransparent conductor back contacts, and CuInSe2 module prototypes. A method for calculating open-circuit voltage and fill-factor temperature coefficients is proposed. The method relies on the acquisition of large statistical data samples to average effects due to varying insolation level.

Quest for Novel Chemical Entities through Incorporation of Silicon in Drug Scaffolds.

PubMed

Ramesh, Remya; Reddy, D Srinivasa

2018-05-10

In order to optimize a lead molecule for further development, bioisosteric replacements are generally adopted as one of the strategies. Silicon appears to be the right choice as a carbon isostere because of the similarity in chemical properties. Silicon can be strategically introduced in a molecule to modulate its druglike properties, providing medicinal chemists with an unconventional strategy for replacing a carbon atom. Silicon can also be introduced to replace other heteroatoms and can act as a surrogate of functional groups such as olefin and amide as well. The present Perspective focuses on the opportunities that silicon incorporation offers in drug discovery, with an emphasis on case studies where introduction of silicon has created a benefit over its analog. We have tried to highlight all the recent developments in the field and briefly discuss the challenges associated with them.

Porous silicon advances in drug delivery and immunotherapy.

PubMed

Savage, David J; Liu, Xuewu; Curley, Steven A; Ferrari, Mauro; Serda, Rita E

2013-10-01

Biomedical applications of porous silicon include drug delivery, imaging, diagnostics and immunotherapy. This review summarizes new silicon particle fabrication techniques, dynamics of cellular transport, advances in the multistage vector approach to drug delivery, and the use of porous silicon as immune adjuvants. Recent findings support superior therapeutic efficacy of the multistage vector approach over single particle drug delivery systems in mouse models of ovarian and breast cancer. With respect to vaccine development, multivalent presentation of pathogen-associated molecular patterns on the particle surface creates powerful platforms for immunotherapy, with the porous matrix able to carry both antigens and immune modulators. Copyright © 2013 Elsevier Ltd. All rights reserved.

Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET.

PubMed

Voisin, B; Maurand, R; Barraud, S; Vinet, M; Jehl, X; Sanquer, M; Renard, J; De Franceschi, S

2016-01-13

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.

Structural and electrical investigations of a-Si:H(i) and a-Si:H(n+) stacked layers for improving the interface and passivation qualities

NASA Astrophysics Data System (ADS)

Hsieh, Yu-Lin; Lee, Chien-Chieh; Lu, Chia-Cheng; Fuh, Yiin-Kuen; Chang, Jenq-Yang; Lee, Ju-Yi; Li, Tomi T.

2017-07-01

A symmetrically stacked structure [(a-Si:H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si:H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R=H2/SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

Semi-solid dosage form of clonazepam for rapid oral mucosal absorption.

PubMed

Sakata, Osamu; Machida, Yoshiharu; Onishi, Hiraku

2011-07-01

In order to obtain an alternative to the intravenous (i.v.) dosage form of clonazepam (CZ), an oral droplet formulation of CZ was developed previously; however, the droplet was physically unstable. Therefore, in the present study, it was attempted to develop an easily-handled dosage form, which was more physically stable and allowed rapid drug absorption from oral mucosa. A semi-solid dosage form, composed of polyethylene glycol 1500 (PEG), CZ, and oleic acid (OA) at 37/1/2 (w/w) and named PEG/CZ/OA, and a semi-solid dosage form containing PEG and CZ at 39/1 (w/w), called PEG/CZ, were prepared. Their physical stability in air at room temperature and oral mucosal absorption in rats were investigated. The semi-solid dosage forms were much more stable physically than the droplet, that is, no recrystallization of CZ was observed for at least 8 days. The effective concentration for humans and rats (20 ng/mL or more) was achieved within 30 min after buccal administration for both PEG/CZ/OA and PEG/CZ. The plasma concentration increased gradually and less varied at each time point for PEG/CZ/OA. PEG/CZ/OA was found to show more rapid and higher absorption of CZ in buccal administration than in sublingual administration. Buccal administration with the semi-solid dosage PEG/CZ with or without OA was suggested to be a possibly useful novel dosage form as an alternative to i.v. injection.

Qualification of silicon pore optics

NASA Astrophysics Data System (ADS)

Wille, Eric; Bavdaz, Marcos; Fransen, Sebastiaan; Collon, Maximilien; Ackermann, Marcelo; Guenther, Ramses; Chatbi, Abdelhakim; Vacanti, Giuseppe; Vervest, Mark; van Baren, Coen; Haneveld, Jeroen; Riekerink, Mark Olde; Koelewijn, Arenda; Kampf, Dirk; Zuknik, Karl-Heinz; Reutlinger, Arnd

2014-07-01

Silicon Pore Optics (SPO) are the enabling technology for ESA's second large class mission in the Cosmic Vision programme. As for every space hardware, a critical qualification process is required to verify the suitability of the SPO mirror modules surviving the launch loads and maintaining their performance in the space environment. We present recent design modifications to further strengthen the mounting system (brackets and dowel pins) against mechanical loads. The progress of a formal qualification test campaign with the new mirror module design is shown. We discuss mechanical and thermal limitations of the SPO technology and provide recommendations for the mission design of the next X-ray Space Observatory.

Ultra-high-speed graphene optical modulator design based on tight field confinement in a slot waveguide

NASA Astrophysics Data System (ADS)

Kovacevic, Goran; Phare, Christopher; Set, Sze Y.; Lipson, Michal; Yamashita, Shinji

2018-06-01

We present a design of an ultra-fast in-line graphene optical modulator on a silicon waveguide with a bandwidth exceeding 100 GHz, very small power consumption below 15 fJ/bit, and insertion loss of 1.5 dB. This is achieved by utilizing the transverse-electric-mode silicon slot to tailor the overlap of graphene electrodes, thus significantly reducing the capacitance of the device while maintaining a low insertion loss and using conservative estimates of the graphene resistance. Our design is substantiated by comprehensive finite-element-method simulations and RC circuit characterization, as well as fabrication feasibility discussion.

Project analysis and integration economic analyses summary

NASA Technical Reports Server (NTRS)

Macomber, H. L.

1986-01-01

An economic-analysis summary was presented for the manufacture of crystalline-silicon modules involving silicon ingot/sheet, growth, slicing, cell manufacture, and module assembly. Economic analyses provided: useful quantitative aspects for complex decision-making to the Flat-plate Solar Array (FSA) Project; yardsticks for design and performance to industry; and demonstration of how to evaluate and understand the worth of research and development both to JPL and other government agencies and programs. It was concluded that future research and development funds for photovoltaics must be provided by the Federal Government because the solar industry today does not reap enough profits from its present-day sales of photovoltaic equipment.

Thin EFG octagons

NASA Astrophysics Data System (ADS)

Kalejs, J. P.

1994-06-01

This report describes the impact of the technical achievements made in the first 18 months of the three year PVMaT program at Mobil Solar on lowering the manufacturing costs of its photovoltaic polycrystalline silicon-based modules. Manufacturing cost decreases are being achieved through a reduction of silicon material utilization, increases in productivity and yield in crystal growth, and through improvements in the laser cutting process for EFG wafers. The yield, productivity, and throughput advances made possible by these technical achievements are shown to be able to enhance future market share growth for Mobil Solar products as a consequence of significant reductions in a number of direct manufacturing cost elements in EFG wafer and module production.

Microelectromechanical-System-Based Variable-Focus Liquid Lens for Capsule Endoscopes

NASA Astrophysics Data System (ADS)

Seo, Sang Won; Han, Seungoh; Seo, Jun Ho; Kim, Young Mok; Kang, Moon Sik; Min, Nam Ki; Choi, Woo Beom; Sung, Man Young

2009-05-01

A liquid lens based on the electrowetting phenomenon was designed to be cylindrical to minimize dead area. The lens was fabricated with microelectromechanical-system (MEMS) technology using silicon thin film and wafer bonding processes. A multiple dielectric layer comprising Teflon, silicon nitride, and thermal oxide was formed on the cylinder wall. With a change of 11 Vrms in the applied bias, the lens module, including the fabricated liquid lens, showed a focal length change of approximately 166 mm. A capsule endoscope was assembled, including the lens module, and was successfully used to take images of a pig colon at various focal lengths.

Terrestrial photovoltaic collector technology trends

NASA Technical Reports Server (NTRS)

Shimada, K.; Costogue, E.

1984-01-01

Following the path of space PV collector development in its early stages, terrestrial PV technologies based upon single-crystal silicon have matured rapidly. Currently, terrestrial PV cells with efficiencies approaching space cell efficiencies are being fabricated into modules at a fraction of the space PV module cost. New materials, including CuInSe2 and amorphous silicon, are being developed for lowering the cost, and multijunction materials for achieving higher efficiency. Large grid-interactive, tracking flat-plate power systems and concentrator PV systems totaling about 10 MW, are already in operation. Collector technology development both flat-plate and concentrator, will continue under an extensive government and private industry partnership.

Performance analysis of communication links based on VCSEL and silicon photonics technology for high-capacity data-intensive scenario.

PubMed

Boletti, A; Boffi, P; Martelli, P; Ferrario, M; Martinelli, M

2015-01-26

To face the increased demand for bandwidth, cost-effectiveness and simplicity of future Ethernet data communications, a comparison between two different solutions based on directly-modulated VCSEL sources and Silicon Photonics technologies is carried out. Also by exploiting 4-PAM modulation, the transmission of 50-Gb/s and beyond capacity per channel is analyzed by means of BER performance. Applications for optical backplane, very short reach and in case of client-optics networks and intra and inter massive data centers communications (up to 10 km) are taken into account. A comparative analysis based on the power consumption is also proposed.

Performance testing of a novel off-plane reflection grating and silicon pore optic spectrograph at PANTER

NASA Astrophysics Data System (ADS)

Marlowe, Hannah; McEntaffer, Randall L.; Allured, Ryan; DeRoo, Casey; Miles, Drew M.; Donovan, Benjamin D.; Tutt, James H.; Burwitz, Vadim; Menz, Benedikt; Hartner, Gisela D.; Smith, Randall K.; Günther, Ramses; Yanson, Alex; Vacanti, Giuseppe; Ackermann, Marcelo

2015-05-01

An X-ray spectrograph consisting of aligned, radially ruled off-plane reflection gratings and silicon pore optics (SPO) was tested at the Max Planck Institute for extraterrestrial Physics PANTER X-ray test facility. The SPO is a test module for the proposed Arcus mission, which will also feature aligned off-plane reflection gratings. This test is the first time two off-plane gratings were actively aligned to each other and with a SPO to produce an overlapped spectrum. We report the performance of the complete spectrograph utilizing the aligned gratings module and plans for future development.

Photovoltaic solar panels of crystalline silicon: Characterization and separation.

PubMed

Dias, Pablo Ribeiro; Benevit, Mariana Gonçalves; Veit, Hugo Marcelo

2016-03-01

Photovoltaic panels have a limited lifespan and estimates show large amounts of solar modules will be discarded as electronic waste in a near future. In order to retrieve important raw materials, reduce production costs and environmental impacts, recycling such devices is important. Initially, this article investigates which silicon photovoltaic module's components are recyclable through their characterization using X-ray fluorescence, X-ray diffraction, energy dispersion spectroscopy and atomic absorption spectroscopy. Next, different separation methods are tested to favour further recycling processes. The glass was identified as soda-lime glass, the metallic filaments were identified as tin-lead coated copper, the panel cells were made of silicon and had silver filaments attached to it and the modules' frames were identified as aluminium, all of which are recyclable. Moreover, three different components segregation methods have been studied. Mechanical milling followed by sieving was able to separate silver from copper while chemical separation using sulphuric acid was able to detach the semiconductor material. A thermo gravimetric analysis was performed to evaluate the use of a pyrolysis step prior to the component's removal. The analysis showed all polymeric fractions present degrade at 500 °C. © The Author(s) 2016.

Construction and beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

NASA Astrophysics Data System (ADS)

Quast, Thorben

2018-02-01

As part of its HL-LHC upgrade program, CMS is developing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. The HGCAL will be realised as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5-1.0 cm2 interspersed with absorbers. Prototype modules, based on 6-inch hexagonal silicon pad sensors with 128 channels, have been constructed and include many of the features required for this challenging detector. In 2016, beam tests of sampling configurations made from these modules have been conducted both at FNAL and at CERN using the Skiroc2 front-end ASIC (designed by the CALICE collaboration for ILC). In 2017, the setup has been extended with CALICE's AHCAL prototype, a scinitillator based sampling calorimeter, and it was further tested in dedicated beam tests at CERN. There, the new Skiroc2-CMS front-end ASIC was used for the first time. We highlight final results from our studies in 2016, including position resolution as well as precision timing-measurements. Furthermore, the extended setup in 2017 is discussed and first results from beam tests with electrons and pions are shown.

Mass production of silicon pore optics for ATHENA

NASA Astrophysics Data System (ADS)

Wille, Eric; Bavdaz, Marcos; Collon, Maximilien

2016-07-01

Silicon Pore Optics (SPO) provide high angular resolution with low effective area density as required for the Advanced Telescope for High Energy Astrophysics (Athena). The x-ray telescope consists of several hundreds of SPO mirror modules. During the development of the process steps of the SPO technology, specific requirements of a future mass production have been considered right from the beginning. The manufacturing methods heavily utilise off-the-shelf equipment from the semiconductor industry, robotic automation and parallel processing. This allows to upscale the present production flow in a cost effective way, to produce hundreds of mirror modules per year. Considering manufacturing predictions based on the current technology status, we present an analysis of the time and resources required for the Athena flight programme. This includes the full production process starting with Si wafers up to the integration of the mirror modules. We present the times required for the individual process steps and identify the equipment required to produce two mirror modules per day. A preliminary timeline for building and commissioning the required infrastructure, and for flight model production of about 1000 mirror modules, is presented.

An ultralow power athermal silicon modulator.

PubMed

Timurdogan, Erman; Sorace-Agaskar, Cheryl M; Sun, Jie; Shah Hosseini, Ehsan; Biberman, Aleksandr; Watts, Michael R

2014-06-11

Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength-division-multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters and detectors) consume too much power for the high-speed femtojoule-class links that ultimately will be required. Here we demonstrate and characterize the first modulator to achieve simultaneous high-speed (25 Gb s(-1)), low-voltage (0.5 VPP) and efficient 0.9 fJ per bit error-free operation. This low-energy high-speed operation is enabled by a record electro-optic response, obtained in a vertical p-n junction device that at 250 pm V(-1) (30 GHz V(-1)) is up to 10 times larger than prior demonstrations. In addition, this record electro-optic response is used to compensate for thermal drift over a 7.5 °C temperature range with little additional energy consumption (0.24 fJ per bit for a total energy consumption below 1.03 J per bit). The combined results of highly efficient modulation and electro-optic thermal compensation represent a new paradigm in modulator development and a major step towards single-digit femtojoule-class communications.

Low-chirp high-extinction-ratio modulator based on graphene-silicon waveguide.

PubMed

Yang, Longzhi; Hu, Ting; Hao, Ran; Qiu, Chen; Xu, Chao; Yu, Hui; Xu, Yang; Jiang, Xiaoqing; Li, Yubo; Yang, Jianyi

2013-07-15

We present a hybrid graphene-silicon waveguide, which consists of a lateral slot waveguide with three layers of graphene flakes inside. Through a theoretical analysis, an effective index variation for about 0.05 is found in the waveguide by applying a voltage on the graphene. We designed a Mach-Zehnder modulator based on this waveguide and demonstrated it can process signals nearly chirp-free. The calculation shows that the driving voltage is only 1 V even if the length of the arm is shortened to be 43.54 μm. An extinction up to 34.7 dB and a minimum chirp parameter of -0.006 are obtained. Its insertion loss is roughly -1.37 dB. This modulator consumes low power and has a small footprint. It can potentially be ultrafast as well as CMOS compatible.

Method of forming structural heliostat

DOEpatents

Anderson, Alfred J.

1984-06-26

In forming a heliostat having a main support structure and pivoting and tilting motors and gears and a mirror module for reflecting solar energy onto a collector, the improvement characterized by a method of forming the mirror module in which the mirror is laid upon a solid rigid supporting bed in one or more sections, with or without focusing; a mirror backing sheet is applied by first applying respective thin layers of silicone grease and, thereafter, progressively rolling application to eliminate air bubbles; followed by affixing of a substrate assembly to the mirror backing sheet to form a mirror module that does not curve because of thermally induced stresses and differential thermal expansion or contraction effects. The silicone grease also serves to dampen fluttering of the mirror and protect the mirror backside against adverse effects of the weather. Also disclosed are specific details of preferred embodiments.

Optimized optical devices for edge-coupling-enabled silicon photonics platform

NASA Astrophysics Data System (ADS)

Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

2018-02-01

We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (< 2dB per device), high speed (>= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio <= 25 dB) for optical communication applications. Ultra-low loss edge couplers, broadband directional couplers, high-extinction ratio polarization beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

The anti-hepatocellular carcinoma cell activity by a novel mTOR kinase inhibitor CZ415

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei; Research Center of Blood Transfusion Medicine, Education Ministry Key Laboratory of Laboratory Medicine, Zhejiang Provincial People's Hospital, People’s Hospital of Hangzhou medical College, Hangzhou; Chen, Bingyu

Dysregulation of mammalian target of rapamycin (mTOR) in hepatocellular carcinoma (HCC) represents a valuable treatment target. Recent studies have developed a highly-selective and potent mTOR kinase inhibitor, CZ415. Here, we showed that nM concentrations of CZ415 efficiently inhibited survival and induced apoptosis in HCC cell lines (HepG2 and Huh-7) and primary-cultured human HCC cells. Meanwhile, CZ415 inhibited proliferation of HCC cells, more potently than mTORC1 inhibitors (rapamycin and RAD001). CZ415 was yet non-cytotoxic to the L02 human hepatocytes. Mechanistic studies showed that CZ415 disrupted assembly of mTOR complex 1 (mTORC1) and mTORC2 in HepG2 cells. Meanwhile, activation of mTORC1 (p-S6K1)more » and mTORC2 (p-AKT, Ser-473) was almost blocked by CZ415. In vivo studies revealed that oral administration of CZ415 significantly suppressed HepG2 xenograft tumor growth in severe combined immuno-deficient (SCID) mice. Activation of mTORC1/2 was also largely inhibited in CZ415-treated HepG2 tumor tissue. Together, these results show that CZ415 blocks mTORC1/2 activation and efficiently inhibits HCC cell growth in vitro and in vivo. - Highlights: • CZ415 is anti-survival and pro-apoptotic to hepatocellular carcinoma (HCC) cells. • CZ415 inhibits HCC cell proliferation, more efficiently than mTORC1 inhibitors. • CZ415 blocks assembly and activation of both mTORC1 and mTORC2 in HCC cells. • CZ415 oral administration inhibits HepG2 tumor growth in SCID mice. • mTORC1/2 activation in HepG2 tumor is inhibited with CZ415 administration.« less

77 FR 63791 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled into Modules, from the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-10-17

...., Jiangsu Sunlink PV Technology Co., Ltd., and JA Solar Technology Yangzhou Co., Ltd. On June 25, 2012, Wuxi... (Chengdu) PV Tianwei New Energy 25.96 Module Co., Ltd. (Chengdu) PV Module Co., Ltd. Canadian Solar.... Chint Solar (Zhejiang) Co., Ltd Chint Solar (Zhejiang) 25.96 Co., Ltd. Suzhou Shenglong PV-Tech Co...

Solar concentrator modules with silicone-on-glass Fresnel lens panels and multijunction cells.

PubMed

Rumyantsev, Valery D

2010-04-26

High-efficiency multijunction (MJ) solar cells, being very expensive to manufacture, should only be used in combination with solar concentrators in terrestrial applications. An essential cost reduction of electric power produced by photovoltaic (PV) installations with MJ cells, may be expected by the creation of highly-effective, but inexpensive, elements for optical concentration and sun tracking. This article is an overview of the corresponding approach under development at the Ioffe Physical Technical Institute. The approach to R&D of the solar PV modules is based on the concepts of sunlight concentration by small-aperture area Fresnel lenses and "all-glass" module design. The small-aperture area lenses are arranged as a panel with silicone-on-glass structure where the glass plate serves as the front surface of a module. In turn, high-efficiency InGaP/(In)GaAs/Ge cells are arranged on a rear module panel mounted on a glass plate which functions as a heat sink and integrated protective cover for the cells. The developed PV modules and sun trackers are characterized by simple design, and are regarded as the prototypes for further commercialization.

A hybrid electronically scanned pressure module for cryogenic environments

NASA Technical Reports Server (NTRS)

Chapman, J. J.; Hopson, P., Jr.; Kruse, N.

1995-01-01

Pressure is one of the most important parameters measured when testing models in wind tunnels. For models tested in the cryogenic environment of the National Transonic Facility at NASA Langley Research Center, the technique of utilizing commercially available multichannel pressure modules inside the models is difficult due to the small internal volume of the models and the requirement of keeping the pressure transducer modules within an acceptable temperature range well above the -173 degrees C tunnel temperature. A prototype multichannel pressure transducer module has been designed and fabricated with stable, repeatable sensors and materials optimized for reliable performance in the cryogenic environment. The module has 16 single crystal silicon piezoresistive pressure sensors electrostatically bonded to a metalized Pyrex substrate for sensing the wind tunnel model pressures. An integral temperature sensor mounted on each silicon micromachined pressure sensor senses real-time temperature fluctuations to within 0.1 degrees C to correct for thermally induced non-random sensor drift. The data presented here are from a prototype sensor module tested in the 0.3 M cryogenic tunnel and thermal equilibrium conditions in an environmental chamber which approximates the thermal environment (-173 degrees C to +60 degrees C) of the National Transonic Facility.

Laminated photovoltaic modules using back-contact solar cells

DOEpatents

Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

1999-09-14

Photovoltaic modules which comprise back-contact solar cells, such as back-contact crystalline silicon solar cells, positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The module designs allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

Homogenization of CZ Si wafers by Tabula Rasa annealing

NASA Astrophysics Data System (ADS)

Meduňa, M.; Caha, O.; Kuběna, J.; Kuběna, A.; Buršík, J.

2009-12-01

The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, transmission electron microscopy and X-ray diffraction after application of homogenization annealing process called Tabula Rasa. The influence of this homogenization step consisting in short time annealing at high temperature has been observed for various temperatures and times. The experimental results involving the interstitial oxygen decay in Si wafers and absorption spectra of SiOx precipitates during precipitation annealing at 1000∘ C were compared with other techniques for various Tabula Rasa temperatures. The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied is evident from all used experimental techniques. The results qualitatively correlate with prediction of homogenization annealing process based on classical nucleation theory.

LIFE CYCLE DESIGN OF AMORPHOUS SILICON PHOTOVOLTAIC MODULES

EPA Science Inventory

The life cycle design framework was applied to photovoltaic module design. The primary objective of this project was to develop and evaluate design metrics for assessing and guiding the Improvement of PV product systems. Two metrics were used to assess life cycle energy perform...

Heterogeneous silicon mesostructures for lipid-supported bioelectric interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Yuanwen; Carvalho-de-Souza, João L.; Wong, Raymond C. S.

Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multi-scale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical vapour deposition process. It has an amorphous atomic structure, an ordered nanowire-based framework and random submicrometre voids, and shows an average Young’s modulus that is 2–3 orders of magnitude smaller than that of single-crystalline silicon. In addition, we used the heterogeneous silicon mesostructures to design a lipid-bilayer-supported bioelectric interface that is remotely controlled and temporally transient, and that permitsmore » non-genetic and subcellular optical modulation of the electrophysiology dynamics in single dorsal root ganglia neurons. Our findings suggest that the biomimetic expansion of silicon into heterogeneous and deformable forms can open up opportunities in extracellular biomaterial or bioelectric systems.« less

Heterogeneous silicon mesostructures for lipid-supported bioelectric interfaces

PubMed Central

Jiang, Yuanwen; Carvalho-de-Souza, João L.; Wong, Raymond C. S.; Luo, Zhiqiang; Isheim, Dieter; Zuo, Xiaobing; Nicholls, Alan W.; Jung, Il Woong; Yue, Jiping; Liu, Di-Jia; Wang, Yucai; De Andrade, Vincent; Xiao, Xianghui; Navrazhnykh, Luizetta; Weiss, Dara E.; Wu, Xiaoyang; Seidman, David N.; Bezanilla, Francisco; Tian, Bozhi

2017-01-01

Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multiscale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical-vapor-deposition process. It has an amorphous atomic structure, an ordered nanowire-based framework, and random submicrometre voids, and shows an average Young’s modulus that is 2–3 orders of magnitude smaller than that of single crystalline silicon. In addition, we used the heterogeneous silicon mesostructures to design a lipid-bilayer-supported bioelectric interface that is remotely controlled and temporally transient, and that permits non-genetic and subcellular optical modulation of the electrophysiology dynamics in single dorsal root ganglia neurons. Our findings suggest that the biomimetic expansion of silicon into heterogeneous and deformable forms can open up opportunities in extracellular biomaterial or bioelectric systems. PMID:27348576

Evaluation of a high resolution silicon PET insert module

NASA Astrophysics Data System (ADS)

Grkovski, Milan; Brzezinski, Karol; Cindro, Vladimir; Clinthorne, Neal H.; Kagan, Harris; Lacasta, Carlos; Mikuž, Marko; Solaz, Carles; Studen, Andrej; Weilhammer, Peter; Žontar, Dejan

2015-07-01

Conventional PET systems can be augmented with additional detectors placed in close proximity of the region of interest. We developed a high resolution PET insert module to evaluate the added benefit of such a combination. The insert module consists of two back-to-back 1 mm thick silicon sensors, each segmented into 1040 1 mm2 pads arranged in a 40 by 26 array. A set of 16 VATAGP7.1 ASICs and a custom assembled data acquisition board were used to read out the signal from the insert module. Data were acquired in slice (2D) geometry with a Jaszczak phantom (rod diameters of 1.2-4.8 mm) filled with 18F-FDG and the images were reconstructed with ML-EM method. Both data with full and limited angular coverage from the insert module were considered and three types of coincidence events were combined. The ratio of high-resolution data that substantially improves quality of the reconstructed image for the region near the surface of the insert module was estimated to be about 4%. Results from our previous studies suggest that such ratio could be achieved at a moderate technological expense by using an equivalent of two insert modules (an effective sensor thickness of 4 mm).

High Temperature Silicon Carbide (SiC) Traction Motor Drive

DTIC Science & Technology

2011-08-09

UNCLASSIFIED Distribution Statement A. Approved for public release; distribution is unlimited. UNCLASSIFIED HIGH TEMPERATURE SILICON CARBIDE...be modular and conveniently distributed. Small component size and operation with high - temperature liquid coolant are essential factors in the...these densities, power modules capable of high - temperature operation were developed using SiC normally-off JFETs. This paper will discuss the unique

10Gbps monolithic silicon FTTH transceiver without laser diode for a new PON configuration.

PubMed

Zhang, Jing; Liow, Tsung-Yang; Lo, Guo-Qiang; Kwong, Dim-Lee

2010-03-01

A new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU) are proposed, eliminating the need for an internal laser source in ONU. The Si transceiver is fully monolithic, includes integrated wavelength division multiplexing (WDM) filters, modulators (MOD) and photo-detectors (PD), and demonstrates low-cost high volume manufacturability.

Automated aray assembly, phase 2

NASA Technical Reports Server (NTRS)

Daiello, R. V.

1979-01-01

A manufacturing process suitable for the large-scale production of silicon solar array modules at a cost of less than $500/peak kW is described. Factors which control the efficiency of ion implanted silicon solar cells, screen-printed thick film metallization, spray-on antireflection coating process, and panel assembly are discussed. Conclusions regarding technological readiness or cost effectiveness of individual process steps are presented.

Spontaneous cortical DC-potential shifts: modulation stereotypy; relationships to higher EEG-frequencies.

PubMed

Etlinger, S C; Guttmann, G; Bauer, H

1986-07-01

A description of scalp-recorded, spontaneous, cerebral DC-potential shifts is given independent of other variables (shift stereotypy), in relationship to higher frequencies (theta, alpha 1, alpha 2: 4-13 Hz) and as analyzed pairwise across the median sagittal line (Fz, Cz, Pz) separately according to frequency and condition (relaxation and moderate mental load). Spontaneous DC-shifts are shown to behave unpredictably. Whether measured jointly (up to triads) or as dyad and triad context entropy, the frontal DC-shifts are calculated as being random, whereby their definition as such within the context of the Principle Component Analysis is supported by the analysis of longitudinal registrations. Cross-correlation analysis of the cerebral slow potential's relationship to each of the higher frequencies (theta, alpha 1, alpha 2) reveals it to be highly independent, the highest correlation accounting for merely 11% of the common variance, the average being 9% (R congruent to 0.3). By matching the conjoint activity of the DC-potential between Fz-Cz, Cz-Pz, and Fz-Pz to that of theta, alpha 1, alpha 2 at the same paired sites, the DC-activity is shown to be operating at higher levels of synchronous activity than the higher frequencies, regardless of pairing and/or condition, although the general level of synchronous activity (DC, theta, alpha 1, alpha 2) is remarkably high along the median sagittal line, 75% of the correlation averages of all analysis-pairings being above 0.60.

Proceedings of the 21st Project Integration Meeting

NASA Technical Reports Server (NTRS)

1983-01-01

Progress made by the Flat Plate Solar Array Project during the period April 1982 to January 1983 is described. Reports on polysilicon refining, thin film solar cell and module technology development, central station electric utility activities, silicon sheet growth and characteristics, advanced photovoltaic materials, cell and processes research, module technology, environmental isolation, engineering sciences, module performance and failure analysis and project analysis and integration are included.

High-speed, Low Voltage, Miniature Electro-optic Modulators Based on Hybrid Photonic-Crystal/Polymer/Sol-Gel Technology

DTIC Science & Technology

2012-02-01

code) 01/02/2012 FINAL 15/11/2008 - 15/11/2011 High-speed, Low Voltage, Miniature Electro - optic Modulators Based on Hybrid Photonic-Crystal/Polymer... optic modulator, silicon photonics, integrated optics, electro - optic polymer, avionics, optical communications, sol-gel, nanotechnology U U U UU 25...2011 Program Manager: Dr. Charles Y-C Lee High-speed, Low Voltage, Miniature Electro - optic Modulators Based on Hybrid Photonic-Crystal/Polymer/Sol

Silicon solar cells with a total power capacity of 30 kilowatts

NASA Technical Reports Server (NTRS)

1977-01-01

The bulk of the contract effort was carried out in the following two phases: Phase 1 -- module design, Pre-production module fabrication, inspection and test. Phase 2 -- Production, test and delivery. Effort during the first two months of the contract concentrated on design of a solar module to meet specification. Basic module design resulting from this effort is as follows: (1) frame design; (2) cell pan design; (3) cell interconnection; (4) encapsulation; (5) electrical performance.

A Detailed Analysis of Visible Defects Formed in Commercial Silicon Thin-Film Modules During Outdoor Exposure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gerber, Andreas; Johnston, Steve; Olivera-Pimentel, Guillermo

We analyzed defects in silicon thin-film tandem (a-Si:H/..mu..c-Si:H) modules from an outdoor installation in India. The inspection of several affected modules reveals that most of the defects -- which optically appear as bright spots -- were formed primarily nearby the separation and series connection laser lines. Cross-sectional SEM analysis reveals that the bright spots emerge due to electrical isolation, caused by a delamination of the cell from the front TCO in the affected area. In addition, the morphology of the a-Si:H top cell differs in the delaminated area compared to the surrounding unaffected area. We propose that these effects aremore » potentially caused by an explosive and thermally triggered liberation of hydrogen from the a-Si:H layer. Electrical and thermal measurements reveal that these defects can impact the cell performance significantly.« less

3D silicon neural probe with integrated optical fibers for optogenetic modulation.

PubMed

Kim, Eric G R; Tu, Hongen; Luo, Hao; Liu, Bin; Bao, Shaowen; Zhang, Jinsheng; Xu, Yong

2015-07-21

Optogenetics is a powerful modality for neural modulation that can be useful for a wide array of biomedical studies. Penetrating microelectrode arrays provide a means of recording neural signals with high spatial resolution. It is highly desirable to integrate optics with neural probes to allow for functional study of neural tissue by optogenetics. In this paper, we report the development of a novel 3D neural probe coupled simply and robustly to optical fibers using a hollow parylene tube structure. The device shanks are hollow tubes with rigid silicon tips, allowing the insertion and encasement of optical fibers within the shanks. The position of the fiber tip can be precisely controlled relative to the electrodes on the shank by inherent design features. Preliminary in vivo rat studies indicate that these devices are capable of optogenetic modulation simultaneously with 3D neural signal recording.

Integrated resonant micro-optical gyroscope and method of fabrication

DOEpatents

Vawter, G Allen [Albuquerque, NM; Zubrzycki, Walter J [Sandia Park, NM; Guo, Junpeng [Albuquerque, NM; Sullivan, Charles T [Albuquerque, NM

2006-09-12

An integrated optic gyroscope is disclosed which is based on a photonic integrated circuit (PIC) having a bidirectional laser source, a pair of optical waveguide phase modulators and a pair of waveguide photodetectors. The PIC can be connected to a passive ring resonator formed either as a coil of optical fiber or as a coiled optical waveguide. The lasing output from each end of the bidirectional laser source is phase modulated and directed around the passive ring resonator in two counterpropagating directions, with a portion of the lasing output then being detected to determine a rotation rate for the integrated optical gyroscope. The coiled optical waveguide can be formed on a silicon, glass or quartz substrate with a silicon nitride core and a silica cladding, while the PIC includes a plurality of III V compound semiconductor layers including one or more quantum well layers which are disordered in the phase modulators and to form passive optical waveguides.

Monolithic short wave infrared (SWIR) detector array

NASA Technical Reports Server (NTRS)

1983-01-01

A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

Ultralight monolithic photovoltaic modules of amorphous silicon alloys

NASA Astrophysics Data System (ADS)

Hanak, J. J.

A process has been developed for fabrication of roll-up, monolithic, photovoltaic (PV) modules made of amorphous silicon (a-Si) alloys. They consist of tandem-junction solar cells deposited by a continuous, roll-to-roll process onto thin, foil substrates of bare metal, high temperature resin, or metal coated with insulators. They have the following characteristics: size, up to 71 cm x 30.5 cm; total thickness, 8 to 50 microns, power-to-weight and power-to-volume ratios at AM1, 2.4 kW/kg and 6.5 MW/cu m, respectively. Cells of a-Si alloys are up to 100 times as tolerant to irradiation with 1 MeV protons than crystalline cells and the damage is easily annealable. The modules have high power density and stability, they are portable, stowable, deployable, retractable, tolerant to radiation and meteorite or projectile impact, and attractive for terrestrial and aerospace applications.

Ultralight amorphous silicon alloy photovoltaic modules for space and terrestrial applications

NASA Astrophysics Data System (ADS)

Hanak, J. J.; Fulton, C.; Myatt, A.; Nath, P.; Woodyard, J. R.

This paper gives a review and an update on recently developed ultralight photovoltaic modules based on amorphous silicon (a-Si) alloys. They consist of tandem-junction solar cells deposited by a continuous, roll-to-roll process onto thin, foil substrates of bare metal, high temperature resin or metal coated with insulators. They have the following features: size, up to 71 cm x 30.5 cm; total thickness, 8 to 50 microns; power-to-weight at AM1, 2.4 kW/kg; and power-to-volume ratio 6.5 MW/cu m. Cells of a-Si alloys are over 50 times more tolerant to irradiation with 1 MeV and with 200 keV protons than crystalline cells and the damage is easily annealable. The modules have high power density and stability, they are portable, stowable, deployable, retractable, tolerant to radiation and meteorite or projectile impact and attractive for terrestrial and aerospace applications.

Photovoltaic cell module and method of forming

DOEpatents

Howell, Malinda; Juen, Donnie; Ketola, Barry; Tomalia, Mary Kay

2017-12-12

A photovoltaic cell module, a photovoltaic array including at least two modules, and a method of forming the module are provided. The module includes a first outermost layer and a photovoltaic cell disposed on the first outermost layer. The module also includes a second outermost layer disposed on the photovoltaic cell and sandwiching the photovoltaic cell between the second outermost layer and the first outermost layer. The method of forming the module includes the steps of disposing the photovoltaic cell on the first outermost layer, disposing a silicone composition on the photovoltaic cell, and compressing the first outermost layer, the photovoltaic cell, and the second layer to form the photovoltaic cell module.

Vacuum stability testing of Apollo 15 Scientific Instrument Module (SIM) non-metallic materials and reversion of silicone rubber in a motor switch

NASA Technical Reports Server (NTRS)

Clancy, H. M.

1972-01-01

Vacuum stability screening tests were performed on the Apollo 15 Scientific Instrument Module (SIM) bay nonmetallic materials in accordance with the NASA document SP-R-0022. The testing was necessary to support the evaluation to determine the effect material outgassing contamination would have on the SIM bay optical lenses and sensing devices. The Apollo 15 SIM experiments were highly successful, therefore, it is assumed that contamination due to the outgassing of nonmetallic materials did not affect equipment operation. A related problem, the reversion of a silicone rubber grommet which affected an electrical motor switch operation is also reported.

A high-speed, tunable silicon photonic ring modulator integrated with ultra-efficient active wavelength control.

PubMed

Zheng, Xuezhe; Chang, Eric; Amberg, Philip; Shubin, Ivan; Lexau, Jon; Liu, Frankie; Thacker, Hiren; Djordjevic, Stevan S; Lin, Shiyun; Luo, Ying; Yao, Jin; Lee, Jin-Hyoung; Raj, Kannan; Ho, Ron; Cunningham, John E; Krishnamoorthy, Ashok V

2014-05-19

We report the first complete 10G silicon photonic ring modulator with integrated ultra-efficient CMOS driver and closed-loop wavelength control. A selective substrate removal technique was used to improve the ring tuning efficiency. Limited by the thermal tuner driver output power, a maximum open-loop tuning range of about 4.5nm was measured with about 14mW of total tuning power including the heater driver circuit power consumption. Stable wavelength locking was achieved with a low-power mixed-signal closed-loop wavelength controller. An active wavelength tracking range of > 500GHz was demonstrated with controller energy cost of only 20fJ/bit.

Large energy pulse generation modulated by graphene epitaxially grown on silicon carbide.

PubMed

Yu, Haohai; Chen, Xiufang; Zhang, Huaijin; Xu, Xiangang; Hu, Xiaobo; Wang, Zhengping; Wang, Jiyang; Zhuang, Shidong; Jiang, Minhua

2010-12-28

Graphene grown by thermal decomposition of a two-inch 6H silicon carbide (SiC) wafers surface was used to modulate a large energy pulse laser. Because of its saturable absorbing properties, graphene was used as a passive Q-switcher, and because of its high refractive index the SiC substrate was used as an output coupler. Together they formed a setup where the passively Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal laser was realized with the pulse energy of 159.2 nJ. Our results illustrate the feasibility of using graphene as an inexpensive Q-switcher for solid-state lasers and its promising applications in integrated optics.

Mid-infrared integrated photonics on silicon: a perspective

NASA Astrophysics Data System (ADS)

Lin, Hongtao; Luo, Zhengqian; Gu, Tian; Kimerling, Lionel C.; Wada, Kazumi; Agarwal, Anu; Hu, Juejun

2017-12-01

The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

Biodegradable porous silicon barcode nanowires with defined geometry

PubMed Central

Chiappini, Ciro; Liu, Xuewu; Fakhoury, Jean Raymond; Ferrari, Mauro

2010-01-01

Silicon nanowires are of proven importance in diverse fields such as energy production and storage, flexible electronics, and biomedicine due to the unique characteristics emerging from their one-dimensional semiconducting nature and their mechanical properties. Here we report the synthesis of biodegradable porous silicon barcode nanowires by metal assisted electroless etch of single crystal silicon with resistivity ranging from 0.0008 Ω-cm to 10 Ω-cm. We define the geometry of the barcode nanowiresby nanolithography and we characterize their multicolor reflectance and photoluminescence. We develop phase diagrams for the different nanostructures obtained as a function of metal catalyst, H2O2 concentration, ethanol concentration and silicon resistivity, and propose a mechanism that explains these observations. We demonstrate that these nanowires are biodegradable, and their degradation time can be modulated by surface treatments. PMID:21057669

Sleeve reaction chamber system

DOEpatents

Northrup, M Allen [Berkeley, CA; Beeman, Barton V [San Mateo, CA; Benett, William J [Livermore, CA; Hadley, Dean R [Manteca, CA; Landre, Phoebe [Livermore, CA; Lehew, Stacy L [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA

2009-08-25

A chemical reaction chamber system that combines devices such as doped polysilicon for heating, bulk silicon for convective cooling, and thermoelectric (TE) coolers to augment the heating and cooling rates of the reaction chamber or chambers. In addition the system includes non-silicon-based reaction chambers such as any high thermal conductivity material used in combination with a thermoelectric cooling mechanism (i.e., Peltier device). The heat contained in the thermally conductive part of the system can be used/reused to heat the device, thereby conserving energy and expediting the heating/cooling rates. The system combines a micromachined silicon reaction chamber, for example, with an additional module/device for augmented heating/cooling using the Peltier effect. This additional module is particularly useful in extreme environments (very hot or extremely cold) where augmented heating/cooling would be useful to speed up the thermal cycling rates. The chemical reaction chamber system has various applications for synthesis or processing of organic, inorganic, or biochemical reactions, including the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction.

Solar cells and modules from dentritic web silicon

NASA Technical Reports Server (NTRS)

Campbell, R. B.; Rohatgi, A.; Seman, E. J.; Davis, J. R.; Rai-Choudhury, P.; Gallagher, B. D.

1980-01-01

Some of the noteworthy features of the processes developed in the fabrication of solar cell modules are the handling of long lengths of web, the use of cost effective dip coating of photoresist and antireflection coatings, selective electroplating of the grid pattern and ultrasonic bonding of the cell interconnect. Data on the cells is obtained by means of dark I-V analysis and deep level transient spectroscopy. A histogram of over 100 dentritic web solar cells fabricated in a number of runs using different web crystals shows an average efficiency of over 13%, with some efficiencies running above 15%. Lower cell efficiency is generally associated with low minority carrier time due to recombination centers sometimes present in the bulk silicon. A cost analysis of the process sequence using a 25 MW production line indicates a selling price of $0.75/peak watt in 1986. It is concluded that the efficiency of dentritic web cells approaches that of float zone silicon cells, reduced somewhat by the lower bulk lifetime of the former.

Silicon pore optics for future x-ray telescopes

NASA Astrophysics Data System (ADS)

Wille, Eric; Bavdaz, Marcos; Wallace, Kotska; Shortt, Brian; Collon, Maximilien; Ackermann, Marcelo; Günther, Ramses; Olde Riekerink, Mark; Koelewijn, Arenda; Haneveld, Jeroen; van Baren, Coen; Erhard, Markus; Kampf, Dirk; Christensen, Finn; Krumrey, Michael; Freyberg, Michael; Burwitz, Vadim

2017-11-01

Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The candidate mission ATHENA (Advanced Telescope for High Energy Astrophysics) required a mirror assembly of 1 m2 effective area (at 1 keV) and an angular resolution of 10 arcsec or better. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is being developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the recent upgrades made to the manufacturing processes and equipment, ranging from the manufacture of single mirror plates towards complete focusing mirror modules mounted in flight configuration, and results from first vibration tests. The performance of the mirror modules is tested at X-ray facilities that were recently extended to measure optics at a focal distance up to 20 m.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2000-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2001-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

NASA Technical Reports Server (NTRS)

Denis, K. L.; Ali, A.; Appel, J.; Bennett, C. L.; Chang, M. P.; Chuss, D. T.; Colazo, F. A.; Costen, N.; Essinger-Hileman, T.; Hu, R.;

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

NASA Technical Reports Server (NTRS)

Denis, Kevin L.; Aamir, A.; Bennett, C. L.; Chang, M. P.; Chuss, D. T.; Colazo, F. A.; Costen, N.; Essinger-Hileman, T.; Hu, R.; Marriage, T.;

Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.

PubMed

Lloret, J; Kumar, R; Sales, S; Ramos, F; Morthier, G; Mechet, P; Spuesens, T; Van Thourhout, D; Olivier, N; Fédéli, J-M; Capmany, J

2012-06-15

A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0.6  dB between both symbols and a modulation rate up to 1.8 Gbps are demonstrated without using any special driving technique.

Ultra-wide band signal generation using a coupling-tunable silicon microring resonator.

PubMed

Ding, Yunhong; Huang, Bo; Peucheret, Christophe; Xu, Jing; Ou, Haiyan; Zhang, Xinliang; Huang, Dexiu

2014-03-10

Ultra-wide band signal generation using a silicon microring resonator tuned to an NRZ-DPSK modulated optical carrier is proposed and demonstrated. The scheme is shown to enable the generation of UWB signals with switchable polarity and tunable bandwidth by simply tuning the coupling regions of the microring resonator. Monocycle pulses with both negative and positive polarities are successfully synthesized experimentally.

Nanophotonic Devices in Silicon for Nonlinear Optics

DTIC Science & Technology

2010-10-15

record performance  Demonstration of world‟s lowest loss slot waveguides, made in a DOD-trusted foundry (BAE Systems)  Design study showing...highly-cited design study.  Design study on analog links using the above modulators.  Demonstration of the first silicon waveguides for the mid...Hochberg. Design of transmission line driven slot waveguide Mach-Zehnder interferometers and application to analog optical links. Optics Express 2010

Reconfigurable Cellular Photonic Crystal Arrays (RCPA)

DTIC Science & Technology

2013-03-01

signal processing based on reconfigurable integrated optics devices. This technology has the potential to revolutionize the design circle of optical...Accomplishments III.A. Design and fabrication of an accumulation-mode modulator Figure 1(a) shows the schematic of a compact resonator on the double-Si... integration of silicon nitride on silicon-on-insulator platform to enhance the arsenal of photonic circuit designers . The coherent integration of

Technological processes of grating light valve as diffractive spatial light modulator in laser phototypesetting system

NASA Astrophysics Data System (ADS)

Zhang, Wei; Geng, Yu; Hou, Changlun; Yang, Guoguang; Bai, Jian

2008-11-01

Grating Light Valve (GLV) is a kind of optics device based on Micro-Opto-Electro-Mechanical System (MOEMS) technology, utilizing diffraction principle to switch, attenuate and modulate light. In this paper, traditional GLV device's structure and its working principle are illuminated, and a kind of modified GLV structure is presented, with details introduction of the fabrication technology. The GLV structure includes single crystal silicon substrate, silicon dioxide isolating layer, aluminum layer of fixed ribbons and silicon nitride of movable ribbons. In the fabrication, lots of techniques are adopted, such as low-pressure chemical vapor deposition (LPCVD), photolithography, etching and evaporation. During the fabrication processes, Photolithography is a fundamental and fatal technology, which determines etching result and GLV quality. Some methods are proposed through repeated experiments, to improve etching result greatly and guide the practical application. This kind of GLV device can be made both small and inexpensively, and has been tested to show proper range of actuation under DC bias, with good performance. The GLV device also has merits such as low cost, simple technology, high fill ratio and low driving voltage. It can properly be well used and match the demands of high light power needed in laser phototypesetting system, as a high-speed, high-resolution light modulator.

Public release of optimization of metallization scheme for thin emitter wrap-through solar cells for higher efficiency, reduced precious metal costs, and reduced stress.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruby, Douglas Scott; Murphy, Brian; Meakin, David

2008-08-01

Back-contact crystalline-silicon photovoltaic solar cells and modules offer a number of advantages, including the elimination of grid shadowing losses, reduced cost through use of thinner silicon substrates, simpler module assembly, and improved aesthetics. While the existing edge tab method for interconnecting and stringing edge-connected back contact cells is acceptably straightforward and reliable, there are further gains to be exploited when you have both contact polarities on one side of the cell. In this work, we produce 'busbarless' emitter wrap-through solar cells that use 41% of the gridline silver (Ag) metallization mass compared to the edge tab design. Further, series resistancemore » power losses are reduced by extraction of current from more places on the cell rear, leading to a fill factor improvement of about 6% (relative) on the module level. Series resistance and current-generation losses associated with large rear bondpads and busbars are eliminated. Use of thin silicon (Si) wafers is enabled because of the reduced Ag metallization mass and by interconnection with conductive adhesives leading to reduced bow. The busbarless cell design interconnected with conductive adhesives passes typical International Electrotechnical Commission damp heat and thermal cycling test.« less

An extensive investigation of work function modulated trapezoidal recessed channel MOSFET

NASA Astrophysics Data System (ADS)

Lenka, Annada Shankar; Mishra, Sikha; Mishra, Satyaranjan; Bhanja, Urmila; Mishra, Guru Prasad

2017-11-01

The concept of silicon on insulator (SOI) and grooved gate help to lessen the short channel effects (SCEs). Again the work function modulation along the metal gate gives a better drain current due to the uniform electric field along the channel. So all these concepts are combined and used in the proposed MOSFET structure for more improved performance. In this work, trapezoidal recessed channel silicon on insulator (TRC-SOI) MOSFET and work function modulated trapezoidal recessed channel silicon on insulator (WFM-TRC-SOI) MOSFET are compared with DC and RF parameters and later linearity of both the devices is tested. An analytical model is formulated by using a 2-D Poisson's equation and develops a compact equation for threshold voltage using minimum surface potential. In this work we analyze the effect of negative junction depth and the corner angle on various device parameters such as minimum surface potential, sub-threshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage. The analysis interprets that the switching performance of WFM-TRC-SOI MOSFET surpasses TRC-SOI MOSFET in terms of high Ion/Ioff ratio and also the proposed structure can minimize the short channel effects (SCEs) in RF application. The validity of proposed model has been verified with simulation result performed on Sentaurus TCAD device simulator.

EFG solar modules

NASA Technical Reports Server (NTRS)

1978-01-01

Six photovoltaic modules using solar cells fabricated from silicon ribbons were assembled and delivered to JPL. Each module was comprised of four separate submodules which were parallel connected. The submodules contained 45 EFG cells which were series interconnected by a shingle or overlapping design. The inherent rectangular shape of the cells allowed a high packing factor to be achieved. The average efficiency of the six modules, corrected to AM1 at 28 C was 8.7%, which indicates that the average encapsulated cell efficiency was 10.0%.

An ultralow power athermal silicon modulator

PubMed Central

Timurdogan, Erman; Sorace-Agaskar, Cheryl M.; Sun, Jie; Shah Hosseini, Ehsan; Biberman, Aleksandr; Watts, Michael R.

2014-01-01

Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength–division–multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters and detectors) consume too much power for the high-speed femtojoule-class links that ultimately will be required. Here we demonstrate and characterize the first modulator to achieve simultaneous high-speed (25 Gb s−1), low-voltage (0.5 VPP) and efficient 0.9 fJ per bit error-free operation. This low-energy high-speed operation is enabled by a record electro-optic response, obtained in a vertical p–n junction device that at 250 pm V−1 (30 GHz V−1) is up to 10 times larger than prior demonstrations. In addition, this record electro-optic response is used to compensate for thermal drift over a 7.5 °C temperature range with little additional energy consumption (0.24 fJ per bit for a total energy consumption below 1.03 J per bit). The combined results of highly efficient modulation and electro-optic thermal compensation represent a new paradigm in modulator development and a major step towards single-digit femtojoule-class communications. PMID:24915772

Results of module electrical measurement of the DOE 46-kilowatt procurement

NASA Technical Reports Server (NTRS)

Curtis, H. B.

1978-01-01

Current-voltage measurements have been made on terrestrial solar cell modules of the DOE/JPL Low Cost Silicon Solar Array procurement. Data on short circuit current, open circuit voltage, and maximum power for the four types of modules are presented in normalized form, showing distribution of the measured values. Standard deviations from the mean values are also given. Tests of the statistical significance of the data are discussed.

3D packaging of a microfluidic system with sensory applications

NASA Astrophysics Data System (ADS)

Morrissey, Anthony; Kelly, Gerard; Alderman, John C.

1997-09-01

Among the main benefits of microsystem technology are its contributions to cost reductio, reliability and improved performance. however, the packaging of microsystems, and particularly microsensor, has proven to be one of the biggest limitations to their commercialization and the packaging of silicon sensor devices can be the most costly part of their fabrication. This paper describes the integration of 3D packaging of a microsystem. Central to the operation of the 3D demonstrator is a micromachined silicon membrane pump to supply fluids to a sensing chamber constructed about the active area of a sensor chip. This chip carries ISFET based chemical sensors, pressure sensors and thermal sensors. The electronics required for controlling and regulating the activity of the various sensors ar also available on this chip and as other chips in the 3D assembly. The demonstrator also contains a power supply module with optical fiber interconnections. All of these modules are integrated into a single plastic- encapsulated 3D vertical multichip module. The reliability of such a structure, initially proposed by Val was demonstrated by Barrett et al. An additional module available for inclusion in some of our assemblies is a test chip capable of measuring the packaging-induced stress experienced during and after assembly. The packaging process described produces a module with very high density and utilizes standard off-the-shelf components to minimize costs. As the sensor chip and micropump include micromachined silicon membranes and microvalves, the packaging of such structures has to allow consideration for the minimization of the packaging-induced stresses. With this in mind, low stress techniques, including the use of soft glob-top materials, were employed.

Development and evaluation of N-naphthyl-N,O-succinyl chitosan micelles containing clotrimazole for oral candidiasis treatment.

PubMed

Tonglairoum, Prasopchai; Woraphatphadung, Thisirak; Ngawhirunpat, Tanasait; Rojanarata, Theerasak; Akkaramongkolporn, Prasert; Sajomsang, Warayuth; Opanasopit, Praneet

2017-03-01

Clotrimazole (CZ)-loaded N-naphthyl-N,O-succinyl chitosan (NSCS) micelles have been developed as an alternative for oral candidiasis treatment. NSCS was synthesized by reductive N-amination and N,O-succinylation. CZ was incorporated into the micelles using various methods, including the dropping method, the dialysis method, and the O/W emulsion method. The size and morphology of the CZ-loaded micelles were characterized using dynamic light scattering measurements (DLS) and a transmission electron microscope (TEM), respectively. The drug entrapment efficiency, loading capacity, release characteristics, and antifungal activity against Candida albicans were also evaluated. The CZ-loaded micelles prepared using different methods differed in the size of micelles. The micelles ranged in size from 120 nm to 173 nm. The micelles prepared via the O/W emulsion method offered the highest percentage entrapment efficiency and loading capacity. The CZ released from the CZ-loaded micelles at much faster rate compared to CZ powder. The CZ-loaded NSCS micelles can significantly hinder the growth of Candida cells after contact. These CZ-loaded NSCS micelles offer great antifungal activity and might be further developed to be a promising candidate for oral candidiasis treatment.

The community-driven BiG CZ software system for integration and analysis of bio- and geoscience data in the critical zone

NASA Astrophysics Data System (ADS)

Aufdenkampe, A. K.; Mayorga, E.; Horsburgh, J. S.; Lehnert, K. A.; Zaslavsky, I.; Valentine, D. W., Jr.; Richard, S. M.; Cheetham, R.; Meyer, F.; Henry, C.; Berg-Cross, G.; Packman, A. I.; Aronson, E. L.

2014-12-01

Here we present the prototypes of a new scientific software system designed around the new Observations Data Model version 2.0 (ODM2, https://github.com/UCHIC/ODM2) to substantially enhance integration of biological and Geological (BiG) data for Critical Zone (CZ) science. The CZ science community takes as its charge the effort to integrate theory, models and data from the multitude of disciplines collectively studying processes on the Earth's surface. The central scientific challenge of the CZ science community is to develop a "grand unifying theory" of the critical zone through a theory-model-data fusion approach, for which the key missing need is a cyberinfrastructure for seamless 4D visual exploration of the integrated knowledge (data, model outputs and interpolations) from all the bio and geoscience disciplines relevant to critical zone structure and function, similar to today's ability to easily explore historical satellite imagery and photographs of the earth's surface using Google Earth. This project takes the first "BiG" steps toward answering that need. The overall goal of this project is to co-develop with the CZ science and broader community, including natural resource managers and stakeholders, a web-based integration and visualization environment for joint analysis of cross-scale bio and geoscience processes in the critical zone (BiG CZ), spanning experimental and observational designs. We will: (1) Engage the CZ and broader community to co-develop and deploy the BiG CZ software stack; (2) Develop the BiG CZ Portal web application for intuitive, high-performance map-based discovery, visualization, access and publication of data by scientists, resource managers, educators and the general public; (3) Develop the BiG CZ Toolbox to enable cyber-savvy CZ scientists to access BiG CZ Application Programming Interfaces (APIs); and (4) Develop the BiG CZ Central software stack to bridge data systems developed for multiple critical zone domains into a single metadata catalog. The entire BiG CZ Software system is being developed on public repositories as a modular suite of open source software projects. It will be built around a new Observations Data Model Version 2.0 (ODM2) that has been developed by members of the BiG CZ project team, with community input, under separate funding.

Impacts of Quaternary History on Critical Zone Structure and Processes: Examples and a Conceptual Model from the Intensively Managed Landscapes Critical Zone Observatory

NASA Astrophysics Data System (ADS)

Anders, Alison M.; Bettis, E. Arthur; Grimley, David A.; Stumpf, Andrew J.; Kumar, Praveen

2018-03-01

The concept of a critical zone (CZ) supporting terrestrial life has fostered groundbreaking interdisciplinary science addressing complex interactions among water, soil, rock, air and life near Earth’s surface. Pioneering work has focused on the CZ in areas with residual soils and steady-state or erosional topography. CZ evolution in these areas is conceptualized as progressive weathering of local bedrock (e.g. in the flow-through reactor model). However, this model is not applicable to areas in which weathering profiles form in transported materials including the formerly glaciated portion of the Central Lowland of North America. We present a new conceptual model of CZ evolution in landscapes impacted by continental glaciation based on investigations at three study sites in the Intensively Managed Landscapes Critical Zone Observatory (IML-CZO) The IML-CZO is devoted to the study of CZ processes in a region characterized by thick surficial deposits resulting from multiple continental glaciations, with bedrock at depths of up to 150 m. Here the physical (glacial ice, loess, developing soil profiles) and biological (microbes, tundra, forest, prairie) components of the CZ vary significantly in time. Moreover, the spatial relationships between mineral components of the CZ record a history of glacial-interglacial cycles and landscape evolution. We present cross-sections from IML-CZO sites to provide specific examples of how environmental change is recorded by the structure of the mineral components of the CZ. We build on these examples to create an idealized model of CZ evolution through a glacial cycle that represents the IML-CZO sites and other areas of low relief that have experienced continental glaciation. In addition, we identify two main characteristics of CZ structure which should be included in a conceptual model of CZ development in the IML-CZO and similar settings: (1) mineral components have diverse origins and transport trajectories including alteration in past CZs, and, (2) variability in climate, ecosystems, and hydrology during glacial-interglacial cycles profoundly influence the CZ composition, creating a legacy retained in its structure. This legacy is important because the current physical CZ structure influences the occurrence and rates of CZ processes, as well as future CZ responses to land use and climate change.

Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing.

PubMed

Pavlyk, Bohdan; Kushlyk, Markiyan; Slobodzyan, Dmytro

2017-12-01

Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects (N ≥ 10 4  cm -2 ) enriches surface layer with electrically active complexes (dislocation-oxygen, dislocation-vacancy, and dislocation-interstitial atoms of silicon) which are an effective radiative recombination centers.

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

PubMed

Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

2017-02-15

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si₃N₄) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si₃N₄ and the LN-Si₃N₄ waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Optofluidic encapsulation and manipulation of silicon microchips using image processing based optofluidic maskless lithography and railed microfluidics.

PubMed

Chung, Su Eun; Lee, Seung Ah; Kim, Jiyun; Kwon, Sunghoon

2009-10-07

We demonstrate optofluidic encapsulation of silicon microchips using image processing based optofluidic maskless lithography and manipulation using railed microfluidics. Optofluidic maskless lithography is a dynamic photopolymerization technique of free-floating microstructures within a fluidic channel using spatial light modulator. Using optofluidic maskless lithography via computer-vision aided image processing, polymer encapsulants are fabricated for chip protection and guiding-fins for efficient chip conveying within a fluidic channel. Encapsulated silicon chips with guiding-fins are assembled using railed microfluidics, which is an efficient guiding and heterogeneous self-assembly system of microcomponents. With our technology, externally fabricated silicon microchips are encapsulated, fluidically guided and self-assembled potentially enabling low cost fluidic manipulation and assembly of integrated circuits.

Quantitative analysis of defects in silicon. Silicon sheet growth development for the large are silicon sheet task of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Natesh, R.; Smith, J. M.; Bruce, T.; Oidwai, H. A.

1980-01-01

One hundred and seventy four silicon sheet samples were analyzed for twin boundary density, dislocation pit density, and grain boundary length. Procedures were developed for the quantitative analysis of the twin boundary and dislocation pit densities using a QTM-720 Quantitative Image Analyzing system. The QTM-720 system was upgraded with the addition of a PDP 11/03 mini-computer with dual floppy disc drive, a digital equipment writer high speed printer, and a field-image feature interface module. Three versions of a computer program that controls the data acquisition and analysis on the QTM-720 were written. Procedures for the chemical polishing and etching were also developed.

Silicon-sheet and thin-film cell and module technology potential: Issue study

NASA Technical Reports Server (NTRS)

Shimada, K.; Costogue, E. N.; Ferber, R. R.

1984-01-01

The development of high-efficiency low-cost crystalline silicon ribbon and thih-film solar cells for the energy national photovoltaics program was examined. The findings of an issue study conducted are presented. The collected data identified the status of the technology, future research needs, and problems experienced. The potentials of present research activities to meet the Federal/industry long-term technical goal of achieving 15 cents per kilowatt-hour levelized PV energy cost are assessed. Recommendations for future research needs related to crystalline silicon ribbon and thin-film technologies for flat-plate collectors are also included.

Silicon-integrated thin-film structure for electro-optic applications

DOEpatents

McKee, Rodney A.; Walker, Frederick Joseph

2000-01-01

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping

NASA Astrophysics Data System (ADS)

Kwon, Youngim; Yang, Changyol; Yoon, Sang-Hwa; Um, Han-Don; Lee, Jung-Ho; Yoo, Bongyoung

2013-11-01

A major goal in solar cell research is to reduce the cost of the final module. Reducing the thickness of the crystalline silicon substrate to several tens of micrometers can reduce material costs. In this work, we describe the electrodeposition of a Ni-P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin-film silicon substrate. After lift-off of the thin Si film, the mother substrate can be reused, reducing material costs. Moreover, the low-temperature process expected to be improved Si substrate quality.

Space Qualification Test of a-Silicon Solar Cell Modules

NASA Technical Reports Server (NTRS)

Kim, Q.; Lawton, R. A.; Manion, S. J.; Okuno, J. O.; Ruiz, R. P.; Vu, D. T.; Vu, D. T.; Kayali, S. A.; Jeffrey, F. R.

2004-01-01

The basic requirements of solar cell modules for space applications are generally described in MIL-S-83576 for the specific needs of the USAF. However, the specifications of solar cells intended for use on space terrestrial applications are not well defined. Therefore, this qualifications test effort was concentrated on critical areas specific to the microseismometer probe which is intended to be included in the Mars microprobe programs. Parameters that were evaluated included performance dependence on: illuminating angles, terrestrial temperatures, lifetime, as well as impact landing conditions. Our qualification efforts were limited to these most critical areas of concern. Most of the tested solar cell modules have met the requirements of the program except the impact tests. Surprisingly, one of the two single PIN 2 x 1 amorphous solar cell modules continued to function even after the 80000G impact tests. The output power parameters, Pout, FF, Isc and Voc, of the single PIN amorphous solar cell module were found to be 3.14 mW, 0.40, 9.98 mA and 0.78 V, respectively. These parameters are good enough to consider the solar module as a possible power source for the microprobe seismometer. Some recommendations were made to improve the usefulness of the amorphous silicon solar cell modules in space terrestrial applications, based on the results obtained from the intensive short term lab test effort.

Recycling WEEE: Polymer characterization and pyrolysis study for waste of crystalline silicon photovoltaic modules.

PubMed

Dias, Pablo; Javimczik, Selene; Benevit, Mariana; Veit, Hugo

2017-02-01

Photovoltaic (PV) modules contain both valuable and hazardous materials, which makes its recycling meaningful economically and environmentally. In general, the recycling of PV modules starts with the removal of the polymeric ethylene-vinyl acetate (EVA) resin using pyrolysis, which assists in the recovery of materials such as silicon, copper and silver. The pyrolysis implementation, however, needs improvement given its importance. In this study, the polymers in the PV modules were characterized by Fourier transform infrared spectroscopy (FTIR) and the removal of the EVA resin using pyrolysis has been studied and optimized. The results revealed that 30min pyrolysis at 500°C removes >99% of the polymers present in photovoltaic modules. Moreover, the behavior of different particle size milled modules during the pyrolysis process was evaluated. It is shown that polymeric materials tend to remain at a larger particle size and thus, this fraction has the greatest mass loss during pyrolysis. A thermo gravimetric analysis (TGA) performed in all polymeric matter revealed the optimum pyrolysis temperature is around 500°C. Temperatures above 500°C continue to degrade matter, but mass loss rate is 6.25 times smaller. This study demonstrates the use of pyrolysis can remove >99% of the polymeric matter from PV modules, which assists the recycling of this hazardous waste and avoids its disposal. Copyright © 2016 Elsevier Ltd. All rights reserved.

Sideband pump-probe technique resolves nonlinear modulation response of PbS/CdS quantum dots on a silicon nitride waveguide

NASA Astrophysics Data System (ADS)

Kolarczik, Mirco; Ulbrich, Christian; Geiregat, Pieter; Zhu, Yunpeng; Sagar, Laxmi Kishore; Singh, Akshay; Herzog, Bastian; Achtstein, Alexander W.; Li, Xiaoqin; van Thourhout, Dries; Hens, Zeger; Owschimikow, Nina; Woggon, Ulrike

2018-01-01

For possible applications of colloidal nanocrystals in optoelectronics and nanophotonics, it is of high interest to study their response at low excitation intensity with high repetition rates, as switching energies in the pJ/bit to sub-pJ/bit range are targeted. We develop a sensitive pump-probe method to study the carrier dynamics in colloidal PbS/CdS quantum dots deposited on a silicon nitride waveguide after excitation by laser pulses with an average energy of few pJ/pulse. We combine an amplitude modulation of the pump pulse with phase-sensitive heterodyne detection. This approach permits to use co-linearly propagating co-polarized pulses. The method allows resolving transmission changes of the order of 10-5 and phase changes of arcseconds. We find a modulation on a sub-nanosecond time scale caused by Auger processes and biexciton decay in the quantum dots. With ground state lifetimes exceeding 1 μs, these processes become important for possible realizations of opto-electronic switching and modulation based on colloidal quantum dots emitting in the telecommunication wavelength regime.

Packaging of ferroelectric liquid crystal-on-silicon spatial light modulators

NASA Astrophysics Data System (ADS)

Lin, W.; Morozova, Nina D.; Ju, TehHua; Zhang, Weidong; Lee, Yung-Cheng; McKnight, Douglas J.; Johnson, Kristina M.

1996-11-01

A self-pulling soldering technology has been demonstrated for assembling liquid crystal on silicon (LCOS) spatial light modulators (SLMs). One of the major challenges in manufacturing the LCOS modules is to reproducibly control the thickness of the gap between the very large scale integrated circuit (VLSI) chip and the cover glass. The liquid crystal material is sandwiched between the VLSI chop and the cover glass which is coated with a transparent conductor. Solder joints with different profiles and sizes have been designed to provide surface tension forces to control the gap accommodating the ferroelectric liquid crystal layer in the range of a micron level with sub- micron uniformity. The optimum solder joint design is defined as a joint that results in the maximum pulling force. This technology provides an automatic, batch assembly process for a LCOS SLM through one reflow process. Fluxless soldering technology is used to assemble the module. This approach avoids residues from chemical of flux and oxides, and eliminates potential contamination to the device. Two different LCOS SLM designs and the process optimization are described.

Mueller-Stokes characterization and optimization of a liquid crystal on silicon display showing depolarization.

PubMed

Márquez, A; Moreno, I; Iemmi, C; Lizana, A; Campos, J; Yzuel, M J

2008-02-04

In this paper we characterize the polarimetric properties of a liquid crystal on silicon display (LCoS), including depolarization and diattenuation which are usually not considered when applying the LCoS in diffractive or adaptive optics. On one hand, we have found that the LCoS generates a certain degree (that can be larger than a 10%) of depolarized light, which depends on the addressed gray level and on the incident state of polarization (SOP), and can not be ignored in the above mentioned applications. The main origin of the depolarized light is related with temporal fluctuations of the SOP of the light reflected by the LCoS. The Mueller matrix of the LCoS is measured as a function of the gray level, which enables for a numerical optimization of the intensity modulation configurations. In particular we look for maximum intensity contrast modulation or for constant intensity modulation. By means of a heuristic approach we show that, using elliptically polarized light, amplitude-mostly or phase-mostly modulation can be obtained at a wavelength of 633 nm.

A strong electro-optically active lead-free ferroelectric integrated on silicon

NASA Astrophysics Data System (ADS)

Abel, Stefan; Stöferle, Thilo; Marchiori, Chiara; Rossel, Christophe; Rossell, Marta D.; Erni, Rolf; Caimi, Daniele; Sousa, Marilyne; Chelnokov, Alexei; Offrein, Bert J.; Fompeyrine, Jean

2013-04-01

The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of reff=148 pm V-1, which is five times larger than in the current standard material for electro-optical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.

Graphene-assisted ultra-compact polarization splitter and rotator with an extended bandwidth.

PubMed

Zhang, Tian; Ke, Xianmin; Yin, Xiang; Chen, Lin; Li, Xun

2017-09-22

The high refraction-index contrast between silicon and the surrounding cladding makes silicon-on-insulator devices highly polarization-dependent. However, it is greatly desirable for many applications to address the issue of polarization dependence in silicon photonics. Here, a novel ultra-compact polarization splitter and rotator (PSR), constructed with an asymmetrical directional coupler consisting of a rib silicon waveguide and a graphene-embedded rib silicon waveguide (GERSW), on a silicon-on-insulator platform is proposed and investigated. By taking advantage of the large modulation of the effective refractive index of the TE mode for the GERSW by tuning the chemical potential of graphene, the phase matching condition can be well satisfied over a wide spectral band. The presented result demonstrates that for a 7-layer-graphene-embedded PSR with a coupling length of 11.1 μm, a high TM-to-TE conversion efficiency (>-0.5 dB) can be achieved over a broad bandwidth from 1516 to 1602 nm.

Breathing silicon anodes for durable high-power operations

NASA Astrophysics Data System (ADS)

Hwang, Chihyun; Joo, Sehun; Kang, Na-Ri; Lee, Ungju; Kim, Tae-Hee; Jeon, Yuju; Kim, Jieun; Kim, Young-Jin; Kim, Ju-Young; Kwak, Sang-Kyu; Song, Hyun-Kon

2015-09-01

Silicon anode materials have been developed to achieve high capacity lithium ion batteries for operating smart phones and driving electric vehicles for longer time. Serious volume expansion induced by lithiation, which is the main drawback of silicon, has been challenged by multi-faceted approaches. Mechanically rigid and stiff polymers (e.g. alginate and carboxymethyl cellulose) were considered as the good choices of binders for silicon because they grab silicon particles in a tight and rigid way so that pulverization and then break-away of the active mass from electric pathways are suppressed. Contrary to the public wisdom, in this work, we demonstrate that electrochemical performances are secured better by letting silicon electrodes breathe in and out lithium ions with volume change rather than by fixing their dimensions. The breathing electrodes were achieved by using a polysaccharide (pullulan), the conformation of which is modulated from chair to boat during elongation. The conformational transition of pullulan was originated from its α glycosidic linkages while the conventional rigid polysaccharide binders have β linkages.

MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module

PubMed Central

Pandya, H. J.; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P.

2014-01-01

In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400–1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen. PMID:24855449

MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module.

PubMed

Pandya, H J; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P

2014-03-01

In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400-1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen.

A probabilistic analysis of silicon cost

NASA Technical Reports Server (NTRS)

Reiter, L. J.

1983-01-01

Silicon materials costs represent both a cost driver and an area where improvement can be made in the manufacture of photovoltaic modules. The cost from three processes for the production of low-cost silicon being developed under the U.S. Department of Energy's (DOE) National Photovoltaic Program is analyzed. The approach is based on probabilistic inputs and makes use of two models developed at the Jet Propulsion Laboratory: SIMRAND (SIMulation of Research ANd Development) and IPEG (Improved Price Estimating Guidelines). The approach, assumptions, and limitations are detailed along with a verification of the cost analyses methodology. Results, presented in the form of cumulative probability distributions for silicon cost, indicate that there is a 55% chance of reaching the DOE target of $16/kg for silicon material. This is a technically achievable cost based on expert forecasts of the results of ongoing research and development and do not imply any market prices for a given year.

Weakly modulated silicon-dioxide-cladding gratings for silicon waveguide Fabry-Pérot cavities.

PubMed

Grote, Richard R; Driscoll, Jeffrey B; Biris, Claudiu G; Panoiu, Nicolae C; Osgood, Richard M

2011-12-19

We show by theory and experiment that silicon-dioxide-cladding gratings for Fabry-Pérot cavities on silicon-on-insulator channel ("wire") waveguides provide a low-refractive-index perturbation, which is required for several important integrated photonics components. The underlying refractive index perturbation of these gratings is significantly weaker than that of analogous silicon gratings, leading to finer control of the coupling coefficient κ. Our Fabry-Pérot cavities are designed using the transfer-matrix method (TMM) in conjunction with the finite element method (FEM) for calculating the effective index of each waveguide section. Device parameters such as coupling coefficient, κ, Bragg mirror stop band, Bragg mirror reflectivity, and quality factor Q are examined via TMM modeling. Devices are fabricated with representative values of distributed Bragg reflector lengths, cavity lengths, and propagation losses. The measured transmission spectra show excellent agreement with the FEM/TMM calculations.

Optical interconnects based on VCSELs and low-loss silicon photonics

NASA Astrophysics Data System (ADS)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration.

PubMed

Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui

2012-01-30

We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.

Stabilized high-accuracy correction of ocular aberrations with liquid crystal on silicon spatial light modulator in adaptive optics retinal imaging system.

PubMed

Huang, Hongxin; Inoue, Takashi; Tanaka, Hiroshi

2011-08-01

We studied the long-term optical performance of an adaptive optics scanning laser ophthalmoscope that uses a liquid crystal on silicon spatial light modulator to correct ocular aberrations. The system achieved good compensation of aberrations while acquiring images of fine retinal structures, excepting during sudden eye movements. The residual wavefront aberrations collected over several minutes in several situations were statistically analyzed. The mean values of the root-mean-square residual wavefront errors were 23-30 nm, and for around 91-94% of the effective time the errors were below the Marechal criterion for diffraction limited imaging. The ability to axially shift the imaging plane to different retinal depths was also demonstrated.

Automated array assembly task, phase 1

NASA Technical Reports Server (NTRS)

Carbajal, B. G.

1977-01-01

An assessment of state-of-the-art technologies that are applicable to silicon solar cell and solar cell module fabrication is provided. The assessment consists of a technical feasibility evaluation and a cost projection for high-volume production of silicon solar cell modules. The cost projection was approached from two directions; a design-to-cost analysis assigned cost goals to each major process element in the fabrication scheme, and a cost analysis built up projected costs for alternate technologies for each process element. A technical evaluation was used in combination with the cost analysis to identify a baseline low cost process. A novel approach to metal pattern design based on minimum power loss was developed. These design equations were used as a tool in the evaluation of metallization technologies.

Hybrid integration of carbon nanotubes in silicon photonic structures

NASA Astrophysics Data System (ADS)

Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

2017-02-01

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics

NASA Astrophysics Data System (ADS)

El Dirani, Houssein; Monat, Christelle; Brision, Stéphane; Olivier, Nicolas; Jany, Christophe; Letartre, Xavier; Pu, Minhao; Girouard, Peter D.; Hagedorn Frandsen, Lars; Semenova, Elizaveta; Katsuo Oxenløwe, Leif; Yvind, Kresten; Sciancalepore, Corrado

2018-02-01

In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).

Thermal and optical performance of encapsulation systems for flat-plate photovoltaic modules

NASA Technical Reports Server (NTRS)

Minning, C. P.; Coakley, J. F.; Perrygo, C. M.; Garcia, A., III; Cuddihy, E. F.

1981-01-01

The electrical power output from a photovoltaic module is strongly influenced by the thermal and optical characteristics of the module encapsulation system. Described are the methodology and computer model for performing fast and accurate thermal and optical evaluations of different encapsulation systems. The computer model is used to evaluate cell temperature, solar energy transmittance through the encapsulation system, and electric power output for operation in a terrestrial environment. Extensive results are presented for both superstrate-module and substrate-module design schemes which include different types of silicon cell materials, pottants, and antireflection coatings.

A process to control light in a micro resonator through a coupling modulation by surface acoustic waves

NASA Astrophysics Data System (ADS)

Fan, Guofang; Li, Yuan; Hu, Chunguang; Lei, Lihua; Guo, Yanchuan

2016-08-01

A novel process to control light through the coupling modulation by surface acoustic wave (SAW) is presented in an optical micro resonator. An optical waveguide modulator of a racetrack resonator on silicon-on-insulator (SOI) technology is took as an example to explore the mechanism. A finite-difference time-domain (FDTD) is developed to simulate the acousto-optical (AO) modulator using the mechanism. An analytical method is presented to verify our proposal. The results show that the process can work well as an optical modulator by SAW.

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

Strength characteristics of light weight concrete blocks using mineral admixtures

NASA Astrophysics Data System (ADS)

Bhuvaneshwari, P.; Priyadharshini, U.; Gurucharan, S.; Mithunram, B.

2017-07-01

This paper presents an experimental study to investigate the characteristics of light weight concrete blocks. Cement was partially replaced with mineral admixtures like Fly ash (FA), limestone powder waste (LPW), Rice husk ash (RHA), sugarcane fiber waste (SCW) and Chrysopogonzizanioides (CZ). The maximum replacement level achieved was 25% by weight of cement and sand. Total of 56 cubes (150 mm x 150 mm x150 mm) and 18 cylinders (100mmφ and 50mm depth) were cast. The specimens being (FA, RHA, SCW, LPW, CZ, (FA-RHA), (FA-LPW), (FA-CZ), (LPW-CZ), (FA-SCW), (RHA-SCW)).Among the different combination, FA,FA-SCW,CZ,FA-CZ showed enhanced strength and durability, apart from achieving less density.

10Gbps monolithic silicon FTTH transceiver for PON

NASA Astrophysics Data System (ADS)

Zhang, J.; Liow, T. Y.; Lo, G. Q.; Kwong, D. L.

2010-05-01

We propose a new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU), eliminating the need for an internal laser source in ONU. We adopt dual fiber network configuration. The internal light source in each of the ONUs is eliminated. Instead, an extra seed laser source in the optical line termination (OLT) operates in continuous wave mode to serve the ONUs in the PON as a shared and centralized laser source. λ1 from OLT Tx and λ2 from the seed laser are combined by using a WDM combiner and connected to serve the multiple ONUs through the downstream fibers. The ONUs receive the data in λ1. Meanwhile, the ONUs encode and transmit data in λ2, which are sent back to OLT. The monolithic ONU transceiver contains a wavelength-division-multiplexing (WDM) filter component, a silicon modulator and a Ge photo-detector. The WDM in ONU selectively guides λ1 to the Ge-PD where the data in λ1 are detected and converted to electrical signals, and λ2 to the transmitter where the light is modulated by upstream data. The modulated optical signals in λ2 from ONUs are connected back to OLT through upstream fibers. The monolithic ONU transceiver chip size is only 2mm by 4mm. The crosstalk between the Tx and Rx is measured to be less than -20dB. The transceiver chip is integrated on a SFP+ transceiver board. Both Tx and Rx demonstrated data rate capabilities of up to 10Gbps. By implementing this scheme, the ONU transceiver size can be significantly reduced and the assembly processes will be greatly simplified. The results demonstrate the feasibility of mass manufacturing monolithic silicon ONU transceivers via low cost

Integration of carbon nanotubes in slot waveguides (Conference Presentation)

NASA Astrophysics Data System (ADS)

Durán-Valdeiglesias, Elena; Zhang, Weiwei; Hoang, Thi Hong Cam; Alonso-Ramos, Carlos; Serna, Samuel; Le Roux, Xavier; Cassan, Eric; Balestrieri, Matteo; Keita, Al-Saleh; Sarti, Francesco; Biccari, Francesco; Torrini, Ughetta; Vinattieri, Anna; Yang, Hongliu; Bezugly, Viktor; Cuniberti, Gianaurelio; Filoramo, Arianna; Gurioli, Massimo; Vivien, Laurent

2016-05-01

Demanding applications such as video streaming, social networking, or web search relay on a large network of data centres, interconnected through optical links. The ever-growing data rates and power consumption inside these data centres are pushing copper links close to their fundamental limits. Optical interconnects are being extensively studied with the purpose of solving these limitations. Among the different possible technology platforms, silicon photonics, due to its compatibility with the CMOS platform, has become one of the preferred solutions for the development of the future generation photonic interconnects. However, the on-chip integration of all photonic and optoelectronic building blocks (sources, modulators and detectors…) is very complex and is not cost-effective due to the various materials involved (Ge for detection, doped Si for modulators and III-V for lasing). Carbon nanotubes (CNTs) are nanomaterials of great interest in photonics thanks to their fundamental optical properties, including near-IR room-temperature foto- and electro- luminescence, Stark effect, Kerr effect and absorption. In consequence, CNTs have the ability to emit, modulate and detect light in the telecommunications wavelength range. Furthermore, they are being extensively developed for new nano-electronics applications. In this work, we propose to use CNTs as active material integrated into silicon photonics for the development of all optoelectronic devices. Here, we report on the development of new integration schemes to couple the light emission from CNTs into optical resonators implemented on the silicon-on-insulator and silicon-nitride-on-insulator platforms. A theoretical and experimental analysis of the light interaction of CNTs with micro-ring resonators based on strip and slot waveguides and slot photonic crystal heterostructure cavities were carried out.

77 FR 73018 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-07

...., Ltd. (Chengdu) PV Module Co., Ltd. Canadian Solar International Canadian Solar 24.48 Limited..... Chint Solar (Zhejiang) 24.48 Co., Ltd. Suzhou Shenglong PV-Tech Co., Ltd Suzhou Shenglong PV-TECH 24.48.... Jetion Solar (China) Co., Ltd.... Jetion Solar (China) 24.48 Co., Ltd. Jiangsu Green Power PV Co., Ltd...

77 FR 31309 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-25

... into modules (``solar cells''), from the People's Republic of China (``PRC'') are being, or are likely... a petition concerning imports of solar cells from the PRC filed in proper form by SolarWorld...'') duty investigation of solar cells from the PRC on November 8, 2011.\\3\\ \\1\\ See Petition for the...

76 FR 70966 - Crystalline Silicon Photovoltaic Cells, Whether or Not Assembled Into Modules, From the People's...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-16

... modules (solar cells), from the People's Republic of China (PRC) filed in proper form by SolarWorld...), Petitioner alleges that producers/exporters of solar cells from the PRC received countervailable subsidies... the scope of this investigation are solar cells from the PRC. For a full description of the scope of...

Advanced Silicon Photonic Device Architectures for Optical Communications: Proposals and Demonstrations

NASA Astrophysics Data System (ADS)

Sacher, Wesley David

Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the coupling efficiency-bandwidth product. Finally, we describe polarization rotator-splitters and controllers based on mode conversion between the fundamental transverse magnetic polarized mode and a high order transverse electric polarized mode in vertically asymmetric waveguides. We demonstrate the first polarization rotator-splitters and controllers that are fully compatible with standard active Si photonic platforms and extend the concept to our Si3N4-on-Si photonic platform.

ELAS - SCIENCE & TECHNOLOGY LABORATORY APPLICATIONS SOFTWARE (SILICON GRAPHICS VERSION)

NASA Technical Reports Server (NTRS)

Walters, D.

1994-01-01

The Science and Technology Laboratory Applications Software (ELAS) was originally designed to analyze and process digital imagery data, specifically remotely-sensed scanner data. This capability includes the processing of Landsat multispectral data; aircraft-acquired scanner data; digitized topographic data; and numerous other ancillary data, such as soil types and rainfall information, that can be stored in digitized form. ELAS has the subsequent capability to geographically reference this data to dozens of standard, as well as user created projections. As an integrated image processing system, ELAS offers the user of remotely-sensed data a wide range of capabilities in the areas of land cover analysis and general purpose image analysis. ELAS is designed for flexible use and operation and includes its own FORTRAN operating subsystem and an expandable set of FORTRAN application modules. Because all of ELAS resides in one "logical" FORTRAN program, data inputs and outputs, directives, and module switching are convenient for the user. There are over 230 modules presently available to aid the user in performing a wide range of land cover analyses and manipulation. The file management modules enable the user to allocate, define, access, and specify usage for all types of files (ELAS files, subfiles, external files etc.). Various other modules convert specific types of satellite, aircraft, and vector-polygon data into files that can be used by other ELAS modules. The user also has many module options which aid in displaying image data, such as magnification/reduction of the display; true color display; and several memory functions. Additional modules allow for the building and manipulation of polygonal areas of the image data. Finally, there are modules which allow the user to select and classify the image data. An important feature of the ELAS subsystem is that its structure allows new applications modules to be easily integrated in the future. ELAS has as a standard the flexibility to process data elements exceeding 8 bits in length, including floating point (noninteger) elements and 16 or 32 bit integers. Thus it is able to analyze and process "non-standard" nonimage data. The VAX (ERL-10017) and Concurrent (ERL-10013) versions of ELAS 9.0 are written in FORTRAN and ASSEMBLER for DEC VAX series computers running VMS and Concurrent computers running MTM. The Sun (SSC-00019), Masscomp (SSC-00020), and Silicon Graphics (SSC-00021) versions of ELAS 9.0 are written in FORTRAN 77 and C-LANGUAGE for Sun4 series computers running SunOS, Masscomp computers running UNIX, and Silicon Graphics IRIS computers running IRIX. The Concurrent version requires at least 15 bit addressing and a direct memory access channel. The VAX and Concurrent versions of ELAS both require floating-point hardware, at least 1Mb of RAM, and approximately 70Mb of disk space. Both versions also require a COMTAL display device in order to display images. For the Sun, Masscomp, and Silicon Graphics versions of ELAS, the disk storage required is approximately 115Mb, and a minimum of 8Mb of RAM is required for execution. The Sun version of ELAS requires either the X-Window System Version 11 Revision 4 or Sun OpenWindows Version 2. The Masscomp version requires a GA1000 display device and the associated "gp" library. The Silicon Graphics version requires Silicon Graphics' GL library. ELAS display functions will not work with a monochrome monitor. The standard distribution medium for the VAX version (ERL10017) is a set of two 9-track 1600 BPI magnetic tapes in DEC VAX BACKUP format. This version is also available on a TK50 tape cartridge in DEC VAX BACKUP format. The standard distribution medium for the Concurrent version (ERL-10013) is a set of two 9-track 1600 BPI magnetic tapes in Concurrent BACKUP format. The standard distribution medium for the Sun version (SSC-00019) is a .25 inch streaming magnetic tape cartridge in UNIX tar format. The standard distribution medium for the Masscomp version, (SSC-00020) is a .25 inch streaming magnetic tape cartridge in UNIX tar format. The standard distribution medium for the Silicon Graphics version (SSC-00021) is a .25 inch streaming magnetic IRIS tape cartridge in UNIX tar format. Version 9.0 was released in 1991. Sun4, SunOS, and Open Windows are trademarks of Sun Microsystems, Inc. MIT X Window System is licensed by Massachusetts Institute of Technology.

Anti resonant reflecting optical waveguide structure based on oxidized porous silicon for label free bio sensing applications

NASA Astrophysics Data System (ADS)

Haji, L.; Hiraoui, M.; Lorrain, N.; Guendouz, M.

2012-03-01

In this letter we report on the use of an electrochemical process for the fabrication of anti resonant reflecting optical waveguide based on oxidized porous silicon. This method is known to allow the formation of various photonic structures (Bragg mirror, microcavity), thanks to the easy and in situ modulation of the porosity and thus of the refractive index. Planar anti resonant reflecting optical waveguide structure made from porous silicon is demonstrated to be very effective for low losses as compared to conventional resonant waveguide. Optical measurements carried out for TE and TM polarizations are reported and related to optical sensing.

Tunable reflecting terahertz filter based on chirped metamaterial structure

PubMed Central

Yang, Jing; Gong, Cheng; Sun, Lu; Chen, Ping; Lin, Lie; Liu, Weiwei

2016-01-01

Tunable reflecting terahertz bandstop filter based on chirped metamaterial structure is demonstrated by numerical simulation. In the metamaterial, the metal bars are concatenated to silicon bars with different lengths. By varying the conductivity of the silicon bars, the reflectivity, central frequency and bandwidth of the metamaterial could be tuned. Light illumination could be introduced to change the conductivity of the silicon bars. Numerical simulations also show that the chirped metamaterial structure is insensitive to the incident angle and polarization-dependent. The proposed chirped metamaterial structure can be operated as a tunable bandstop filter whose modulation depth, bandwidth, shape factor and center frequency can be controlled by light pumping. PMID:27941833

Research on SOI-based micro-resonator devices

NASA Astrophysics Data System (ADS)

Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

2010-10-01

SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of < 400 ps and crosstalk < -23 dB, and > 10 Gbit/s high speed microring modulators.

Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

PubMed

Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

2018-02-05

This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

Reduction of oxygen concentration by heater design during Czochralski Si growth

NASA Astrophysics Data System (ADS)

Zhou, Bing; Chen, Wenliang; Li, Zhihui; Yue, Ruicun; Liu, Guowei; Huang, Xinming

2018-02-01

Oxygen is one of the highest-concentration impurities in single crystals grown by the Czochralski (CZ) process, and seriously impairs the quality of the Si wafer. In this study, computer simulations were applied to design a new CZ system. A more appropriate thermal field was acquired by optimization of the heater structure. The simulation results showed that, compared with the conventional system, the oxygen concentration in the newly designed CZ system was reduced significantly throughout the entire CZ process because of the lower crucible wall temperature and optimized convection. To verify the simulation results, experiments were conducted on an industrial single-crystal furnace. The experimental results showed that the oxygen concentration was reduced significantly, especially at the top of the CZ-Si ingot. Specifically, the oxygen concentration was 6.19 × 1017 atom/cm3 at the top of the CZ-Si ingot with the newly designed CZ system, compared with 9.22 × 1017 atom/cm3 with the conventional system. Corresponding light-induced degradation of solar cells based on the top of crystals from the newly designed CZ system was 1.62%, a reduction of 0.64% compared with crystals from the conventional system (2.26%).

PN-type carrier-induced filter with modulatable extinction ratio.

PubMed

Fang, Qing; Tu, Xiaoguang; Song, Junfeng; Jia, Lianxi; Luo, Xianshu; Yang, Yan; Yu, Mingbin; Lo, Guoqiang

2014-12-01

We demonstrate the first PN-type carrier-induced silicon waveguide Bragg grating filter on a SOI wafer. The optical extinction ratio of this kind of filter can be efficiently modulated under both reverse and forward biases. The carrier-induced Bragg grating based on a PN junction is fabricated on the silicon waveguide using litho compensation technology. The measured optical bandwidth and the extinction ratio of the filter are 0.45 nm and 19 dB, respectively. The optical extinction ratio modulation under the reverse bias is more than 11.5 dB and it is more than 10 dB under the forward bias. Only 1-dB optical transmission loss is realized in this Bragg grating under a reverse bias. The shifting rates of the central wavelength under forward and reverse biases are ~-1.25 nm/V and 0.01 nm/V, respectively. The 3-dB modulation bandwidth of this filter is 5.1 GHz at a bias of -10 V.

Investigation of welded interconnection of large area wraparound contacted silicon solar cells

NASA Technical Reports Server (NTRS)

Lott, D. R.

1984-01-01

An investigation was conducted to evaluate the welding and temperature cycle testing of large area 5.9 x 5.9 wraparound silicon solar cells utilizing printed circuit substrates with SSC-155 interconnect copper metals and the LMSC Infrared Controlled weld station. An initial group of 5 welded modules containing Phase 2 developmental 5.9 x 5.9 cm cells were subjected to cyclical temperatures of + or 80 C at a rate of 120 cycles per day. Anomalies were noted in the adhesion of the cell contact metallization; therefore, 5 additional modules were fabricated and tested using available Phase I cells with demonstrated contact integrity. Cycling of the later module type through 12,000 cycles indicated the viability of this type of lightweight flexible array concept. This project demonstrated acceptable use of an alternate interconnect copper in combination with large area wraparound cells and emphasized the necessity to implement weld pull as opposed to solder pull procedures at the cell vendors for cells that will be interconnected by welding.

Design of Hybrid Silicon and Lithium Niobate Active Region for Electro-optical Modulation

DTIC Science & Technology

2017-03-01

bandwidth our group has proposed a Mach-Zehnder traveling -wave type modulator with optimized cross section dimensions using a similar material stack as...increases the electric field intensity available to the Pockel’s effect. At the same time , the induced metal loss increases as the electrodes become...Gopalakrishnan et al., “Performance and modeling of broadband LiNbO3 traveling wave optical intensity modulators,” J. Light. Technol., vol. 12, no. 10, pp

Ultrafast two-photon absorption generated free-carrier modulation in a silicon nanoplasmonic resonator

NASA Astrophysics Data System (ADS)

Nielsen, M. P.; Elezzabi, A. Y.

2014-03-01

Ultrafast all-optical modulation in Ag/HfO2/Si/HfO2/Ag metal-insulator-semiconductor-insulator-metal (MISIM) nanoring resonators through two-photon absorption photogenerated free-carriers is studied using self-consistent 3-D finite difference time domain (FDTD) simulations. The self-consistent FDTD simulations incorporate the two-photon absorption, free carrier absorption, and plasma dispersion effects in silicon. The nanorings are aperture coupled to Ag/HfO2/Si(100nm)/HfO2/Ag MISIM waveguides by 300nm wide and 50nm deep apertures. The effects of pump pulse energy, HfO2 spacer thickness, and device footprint on the modulation characteristics are studied. Nanoring radius is varied between 540nm and 1μm, the HfO2 spacer thickness is varied between 10nm and 20nm, and the pump pulse energy is explored up to 60pJ. Modulation amplitude, switching time, average generated carrier density, and wavelength resonant shift is studied for each of the device configurations. In a compact device footprint of only 1.4μm2, a 13.1dB modulation amplitude was obtained with a switching time of only 2ps using a modest pump pulse energy of 16.0pJ. The larger bandwidth associated with more compact nanorings and thinner spacer layers is shown to result in increased modulation amplitude.

Low-loss adiabatically-tapered high-contrast gratings for slow-wave modulators on SOI

NASA Astrophysics Data System (ADS)

Sciancalepore, Corrado; Hassan, Karim; Ferrotti, Thomas; Harduin, Julie; Duprez, Hélène; Menezo, Sylvie; Ben Bakir, Badhise

2015-02-01

In this communication, we report about the design, fabrication, and testing of Silicon-based photonic integrated circuits (Si-PICs) including low-loss flat-band slow-light high-contrast-gratings (HCGs) waveguides at 1.31 μm. The light slowdown is achieved in 300-nm-thick silicon-on-insulator (SOI) rib waveguides by patterning adiabatically-tapered highcontrast gratings, capable of providing slow-light propagation with extremely low optical losses, back-scattering, and Fabry-Pérot noise. In detail, the one-dimensional (1-D) grating architecture is capable to provide band-edge group indices ng ~ 25, characterized by overall propagation losses equivalent to those of the index-like propagation regime (~ 1-2 dB/cm). Such photonic band-edge slow-light regime at low propagation losses is made possible by the adiabatic apodization of such 1-D HCGs, thus resulting in a win-win approach where light slow-down regime is reached without additional optical losses penalty. As well as that, a tailored apodization optimized via genetic algorithms allows the flattening of slow-light regime over the wavelength window of interest, therefore suiting well needs for group index stability for modulation purposes and non-linear effects generation. In conclusion, such architectures provide key features suitable for power-efficient high-speed modulators in silicon as well as an extremely low-loss building block for non-linear optics (NLO) which is now available in the Si photonics toolbox.

Modulation of porphyrin photoluminescence by nanoscale spacers on silicon substrates

NASA Astrophysics Data System (ADS)

Fang, Y. C.; Zhang, Y.; Gao, H. Y.; Chen, L. G.; Gao, B.; He, W. Z.; Meng, Q. S.; Zhang, C.; Dong, Z. C.

2013-11-01

We investigate photoluminescence (PL) properties of quasi-monolayered tetraphenyl porphyrin (TPP) molecules on silicon substrates modulated by three different nanoscale spacers: native oxide layer (NOL), hydrogen (H)-passivated layer, and Ag nanoparticle (AgNP) thin film, respectively. In comparison with the PL intensity from the TPP molecules on the NOL-covered silicon, the fluorescence intensity from the molecules on the AgNP-covered surface was greatly enhanced while that for the H-passivated surface was found dramatically suppressed. Time-resolved fluorescence spectra indicated shortened lifetimes for TPP molecules in both cases, but the decay kinetics is believed to be different. The suppressed emission for the H-passivated sample was attributed to the weaker decoupling effect of the monolayer of hydrogen atoms as compared to the NOL, leading to increased nonradiative decay rate; whereas the enhanced fluorescence with shortened lifetime for the AgNP-covered sample is attributed not only to the resonant excitation by local surface plasmons, but also to the increased radiative decay rate originating from the emission enhancement in plasmonic "hot-spots".

3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Da Vià, Cinzia; Boscardil, Maurizio; Dalla Betta, GianFranco

2013-01-01

3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBLmore » sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.« less

Microchip Module for Blood Sample Preparation and Nucleic Acid Amplification Reactions

PubMed Central

Yuen, Po Ki; Kricka, Larry J.; Fortina, Paolo; Panaro, Nicholas J.; Sakazume, Taku; Wilding, Peter

2001-01-01

A computer numerical control-machined plexiglas-based microchip module was designed and constructed for the integration of blood sample preparation and nucleic acid amplification reactions. The microchip module is comprised of a custom-made heater-cooler for thermal cycling, a series of 254 μm × 254 μm microchannels for transporting human whole blood and reagents in and out of an 8–9 μL dual-purpose (cell isolation and PCR) glass-silicon microchip. White blood cells were first isolated from a small volume of human whole blood (<3 μL) in an integrated cell isolation–PCR microchip containing a series of 3.5-μm feature-sized “weir-type” filters, formed by an etched silicon dam spanning the flow chamber. A genomic target, a region in the human coagulation Factor V gene (226-bp), was subsequently directly amplified by microchip-based PCR on DNA released from white blood cells isolated on the filter section of the microchip mounted onto the microchip module. The microchip module provides a convenient means to simplify nucleic acid analyses by integrating two key steps in genetic testing procedures, cell isolation and PCR and promises to be adaptable for additional types of integrated assays. PMID:11230164

Low-power nanophotonics: material and device technology

NASA Astrophysics Data System (ADS)

Thylén, Lars; Holmstrom, Petter; Wosinski, Lech; Lourdudoss, Sebastian

2013-05-01

Development in photonics for communications and interconnects pose increasing requirements on reduction of footprint, power dissipation and cost, as well as increased bandwidth. Nanophotonics integrated photonics has been viewed as a solution to this, capitalizing on development in nanotechnology and an increased understanding of light matter interaction on the nanoscale. The latter can be exemplified by plasmonics and low dimensional semiconductors such as quantum dots (QDs). In this scenario the development of improved electrooptic materials is of great importance, the electrooptic polymers being an example, since they potentially offer superior properties for optical phase modulators in terms of power and integratability. Phase modulators are essential for e.g. the rapidly developing advanced modulation formats, since phase modulation basically can generate any type of modulation. The electrooptic polymers, in combination with plasmonics nanoparticle array waveguides or nanostructured hybrid plasmonic media can give extremely compact and low power dissipation modulators. Low-dimensional semiconductors, e.g. in the shape of QDs, can be employed for modulation or switching functions, offering possibilities for scaling to 2 or 3 dimensions for advanced switching functions. In both the high field confinement plasmonics and QDs, the nanosizing is due to nearfield interactions, albeit being of different physical origin in the two cases. Epitaxial integration of III-V structures on Si plays an important role in developing high-performance light sources on silicon, eventually integrated with silicon electronics. A brief remark on all-optical vs. electronically controlled optical switching systems is also given.

Teaching climate science within the transdisciplinary framework of Critical Zone science

NASA Astrophysics Data System (ADS)

White, T. S.; Wymore, A.; Dere, A. L. D.; Washburne, J. C.; Hoffman, A.; Conklin, M. H.

2017-12-01

During the past decade a new realm of Earth surface and environmental science has evolved, Critical Zone (CZ) science. The CZ is the outermost layer of the continents spanning from the top of the vegetation canopy down to the bottom of the fresh groundwater zone. CZ science integrates across many disciplines and cross cutting concepts, including climate science, and much progress has been made by the CZ community to develop educational curricula - descriptions of the climate science aspects of two of those follows. An interdisciplinary team of CZ scientists developed an undergraduate course entitled "Introduction to CZ science". The semester-long course is modular, has been tested in multiple university settings, and the content is available online. A primary tenet of the course is that to achieve environmental sustainability, society must understand the CZ system, the natural processes and services of the CZ that are of value to society, and how those processes operate with and without the presence of humanity. A fundamental concept in the course is that the fluxes of water, C, energy, reactive gases, particulates and nutrients throughout the CZ are directly and indirectly related to climatic phenomenon and processes. Units on land-atmosphere interactions, weathering, and water budgets highlight the connection between CZ science and climate science, and are augmented by learning activities that consider climate links to soil development and landscape evolution. An online open-source course entitled "Earth 530: Earth Surface Processes in the Critical Zone'" is offered as part of The Pennsylvania State University's Masters of Education in Earth Sciences program. The course is designed to educate teachers interested in incorporating CZ science into their classrooms, though it is usable by anyone with a basic understanding of Earth surface and environmental science. Earth 530 introduces students to knowledge needed to understand the CZ through integration of transdisciplinary science. The course structure is organized into seven units; those covering the atmosphere and climate, water, and landforms, are of particular interest to this session. Earth 530 is unique from the introductory course discussed previously in that students also consider paleoclimate and future climate predictions as part of this curriculum.

Argonne - Ring Resonators

Science.gov Websites

-- Link6 -- Integrated Photonic Spectrographs for Astronomy Optical Multi-Mode Interference Devices Dual Guiding, Modulating, and Emitting Light on Silicon Scope1 -- Scope 2 -- Lamp1 -- optical Ring Resonators

Atomic force microscope based on vertical silicon probes

NASA Astrophysics Data System (ADS)

Walter, Benjamin; Mairiaux, Estelle; Faucher, Marc

2017-06-01

A family of silicon micro-sensors for Atomic Force Microscope (AFM) is presented that allows to operate with integrated transducers from medium to high frequencies together with moderate stiffness constants. The sensors are based on Micro-Electro-Mechanical-Systems technology. The vertical design specifically enables a long tip to oscillate perpendicularly to the surface to be imaged. The tip is part of a resonator including quasi-flexural composite beams, and symmetrical transducers that can be used as piezoresistive detector and/or electro-thermal actuator. Two vertical probes (Vprobes) were operated up to 4.3 MHz with stiffness constants 150 N/m to 500 N/m and the capability to oscillate from 10 pm to 90 nm. AFM images of several samples both in amplitude modulation (tapping-mode) and in frequency modulation were obtained.

Design and operation of grid-interactive thin-film silicon PV systems

NASA Astrophysics Data System (ADS)

Marion, Bill; Atmaram, Gobind; Lashway, Clin; Strachan, John W.

Results are described from the operation of 11 thin-film amorphous silicon photovoltaic systems at three test facilities: the Florida Solar Energy Center, the New Mexico Solar Energy Institute, and Sandia National Laboratories. Commercially available modules from four US manufacturers are used in these systems, with array sizes from 133 to 750 W peak. Measured array efficiencies are from 3.1 to 4.8 percent. Except for one manufacturer, array peak power is in agreement with the calculated design ratings. For certain grid-connected systems, nonoptimal operation exists because the array peak power voltage is below the lower voltage limit of the power conditioning system. Reliability problems are found in two manufacturers' modules when shorts to ground and terminal corrosion occur. Array leakage current data are presented.

Photoelectrochemical modulation of neuronal activity with free-standing coaxial silicon nanowires

NASA Astrophysics Data System (ADS)

Parameswaran, Ramya; Carvalho-de-Souza, João L.; Jiang, Yuanwen; Burke, Michael J.; Zimmerman, John F.; Koehler, Kelliann; Phillips, Andrew W.; Yi, Jaeseok; Adams, Erin J.; Bezanilla, Francisco; Tian, Bozhi

2018-02-01

Optical methods for modulating cellular behaviour are promising for both fundamental and clinical applications. However, most available methods are either mechanically invasive, require genetic manipulation of target cells or cannot provide subcellular specificity. Here, we address all these issues by showing optical neuromodulation with free-standing coaxial p-type/intrinsic/n-type silicon nanowires. We reveal the presence of atomic gold on the nanowire surfaces, likely due to gold diffusion during the material growth. To evaluate how surface gold impacts the photoelectrochemical properties of single nanowires, we used modified quartz pipettes from a patch clamp and recorded sustained cathodic photocurrents from single nanowires. We show that these currents can elicit action potentials in primary rat dorsal root ganglion neurons through a primarily atomic gold-enhanced photoelectrochemical process.

Modeling and designing multilayer 2D perovskite / silicon bifacial tandem photovoltaics for high efficiencies and long-term stability.

PubMed

Chung, Haejun; Sun, Xingshu; Mohite, Aditya D; Singh, Rahul; Kumar, Lokendra; Alam, Muhammad A; Bermel, Peter

2017-04-17

A key challenge in photovoltaics today is to develop cell technologies with both higher efficiencies and lower fabrication costs than incumbent crystalline silicon (c-Si) single-junction cells. While tandem cells have higher efficiencies than c-Si alone, it is generally challenging to find a low-cost, high-performance material to pair with c-Si. However, the recent emergence of 22% efficient perovskite photovoltaics has created a tremendous opportunity for high-performance, low-cost perovskite / crystalline silicon tandem photovoltaic cells. Nonetheless, two key challenges remain. First, integrating perovskites into tandem structures has not yet been demonstrated to yield performance exceeding commercially available crystalline silicon modules. Second, the stability of perovskites is inconsistent with the needs of most end-users, who install photovoltaic modules to produce power for 25 years or more. Making these cells viable thus requires innovation in materials processing, device design, fabrication, and yield. We will address these two gaps in the photovoltaic literature by investigating new types of 2D perovskite materials with n-butylammonium spacer layers, and integrating these materials into bifacial tandem solar cells providing at least 30% normalized power production. We find that an optimized 2D perovskite ((BA)₂(MA)₃(Sn_0.6Pb_0.4)₄I₁₃)/silicon bifacial tandem cell, given a globally average albedo of 30%, yields a normalized power production of 30.31%, which should be stable for extended time periods without further change in materials or encapsulation.

Improvements in world-wide intercomparison of PV module calibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salis, E.; Pavanello, D.; Field, M.

The calibration of the electrical performance of seven photovoltaic (PV) modules was compared between four reference laboratories on three continents. The devices included two samples in standard and two in high-efficiency crystalline silicon technology, two CI(G)S and one CdTe module. The reference value for each PV module parameter was calculated from the average of the results of all four laboratories, weighted by the respective measurement uncertainties. All single results were then analysed with respect to this reference value using the E n number approach. For the four modules in crystalline silicon technology, the results agreed in general within +/-0.5%, withmore » all values within +/-1% and all E n numbers well within [-1, 1], indicating further scope for reducing quoted measurement uncertainty. Regarding the three thin-film modules, deviations were on average roughly twice as large, i.e. in general from +/-1% to +/-2%. A number of inconsistent results were observable, although within the 5% that can be statistically expected on the basis of the E n number approach. Most inconsistencies can be traced to the preconditioning procedure of one participant, although contribution of other factors cannot be ruled out. After removing these obvious inconsistent results, only two real outliers remained, representing less than 2% of the total number of measurands. The results presented show improved agreement for the calibration of PV modules with respect to previous international exercises. For thin-film PV modules, the preconditioning of the devices prior to calibration measurements is the most critical factor for obtaining consistent results, while the measurement processes seem consistent and repeatable.« less

Improvements in world-wide intercomparison of PV module calibration

DOE PAGES

Salis, E.; Pavanello, D.; Field, M.; ...

2017-09-14

The calibration of the electrical performance of seven photovoltaic (PV) modules was compared between four reference laboratories on three continents. The devices included two samples in standard and two in high-efficiency crystalline silicon technology, two CI(G)S and one CdTe module. The reference value for each PV module parameter was calculated from the average of the results of all four laboratories, weighted by the respective measurement uncertainties. All single results were then analysed with respect to this reference value using the E n number approach. For the four modules in crystalline silicon technology, the results agreed in general within +/-0.5%, withmore » all values within +/-1% and all E n numbers well within [-1, 1], indicating further scope for reducing quoted measurement uncertainty. Regarding the three thin-film modules, deviations were on average roughly twice as large, i.e. in general from +/-1% to +/-2%. A number of inconsistent results were observable, although within the 5% that can be statistically expected on the basis of the E n number approach. Most inconsistencies can be traced to the preconditioning procedure of one participant, although contribution of other factors cannot be ruled out. After removing these obvious inconsistent results, only two real outliers remained, representing less than 2% of the total number of measurands. The results presented show improved agreement for the calibration of PV modules with respect to previous international exercises. For thin-film PV modules, the preconditioning of the devices prior to calibration measurements is the most critical factor for obtaining consistent results, while the measurement processes seem consistent and repeatable.« less

Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

NASA Astrophysics Data System (ADS)

Tomizawa, Yuka; Imamura, Tetsuya; Soeda, Masaya; Ikeda, Yoshinori; Shiro, Takashi

2015-08-01

Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si-wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram® Si paste/ink were better than those of the reference cell.

An all-silicon optical PC-to-PC link utilizing USB

NASA Astrophysics Data System (ADS)

Goosen, Marius E.; Alberts, Antonie C.; Venter, Petrus J.; du Plessis, Monuko; Rademeyer, Pieter

2013-02-01

An integrated silicon light source still remains the Holy Grail for integrated optical communication systems. Hot carrier luminescent light sources provide a way to create light in a standard CMOS process, potentially enabling cost effective optical communication between CMOS integrated circuits. In this paper we present a 1 Mb/s integrated silicon optical link for information transfer, targeting a real-world integrated solution by connecting two PCs via a USB port while transferring data optically between the devices. This realization represents the first optical communication product prototype utilizing a CMOS light emitter. The silicon light sources which are implemented in a standard 0.35 μm CMOS technology are electrically modulated and detected using a commercial silicon avalanche photodiode. Data rates exceeding 10 Mb/s using silicon light sources have previously been demonstrated using raw bit streams. In this work data is sent in two half duplex streams accompanied with the separate transmission of a clock. Such an optical communication system could find application in high noise environments where data fidelity, range and cost are a determining factor.

Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

NASA Astrophysics Data System (ADS)

Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

2016-08-01

Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

Photovoltaic Small Molecules of TPA(FxBT-T-Cz)3: Tuning Open-Circuit Voltage over 1.0 V for Their Organic Solar Cells by Increasing Fluorine Substitution.

PubMed

Wang, Qiong; Duan, Linrui; Tao, Qiang; Peng, Wenhong; Chen, Jianhua; Tan, Hua; Yang, Renqiang; Zhu, Weiguo

2016-11-09

To simultaneously improve both open-circuit voltage (V oc ) and short-circuit current density (J sc ) for organic solar cells, a novel D(A-π-Ar) 3 type of photovoltaic small molecules of TPA(F x BT-T-3Cz) 3 was designed and synthesized, which contain central triphenylamine (TPA), terminal carbazole (Cz), armed fluorine-substituted benzothiadiazole (F x BT, where x = 1 or 2), and bridged thiophene (T) units. A narrowed ultraviolet-visible absorption and a decreasing highest occupied molecular orbital energy level were observed from TPA(F 1 BT-T-3Cz) 3 to TPA(F 2 BT-T-3Cz) 3 with increasing fluorine substitution. However, the TPA(F 2 BT-T-3Cz) 3 /PC 71 BM-based solar devices showed a rising V oc of 1.01 V and an enhanced J sc of 10.84 mA cm -2 as well as a comparable power conversion efficiency of 4.81% in comparison to the TPA(F 1 BT-T-3Cz) 3 /PC 71 BM-based devices. Furthermore, in comparison to the parent TPA(BT-T-3Cz) 3 molecule without fluorine substitution, the fluorine-substituted TPA(F x BT-T-3Cz) 3 molecules exhibited significantly incremental V oc and J sc values in their bulk heterojunction organic solar cells, owing to fluorine incorporation in the electron-deficient benzothiadiazole unit.

Continuous modulations of femtosecond laser-induced periodic surface structures and scanned line-widths on silicon by polarization changes.

PubMed

Han, Weina; Jiang, Lan; Li, Xiaowei; Liu, Pengjun; Xu, Le; Lu, YongFeng

2013-07-01

Large-area, uniform laser-induced periodic surface structures (LIPSS) are of wide potential industry applications. The continuity and processing precision of LIPSS are mainly determined by the scanning intervals of adjacent scanning lines. Therefore, continuous modulations of LIPSS and scanned line-widths within one laser scanning pass are of great significance. This study proposes that by varying the laser (800 nm, 50 fs, 1 kHz) polarization direction, LIPSS and the scanned line-widths on a silicon (111) surface can be continuously modulated with high precision. It shows that the scanned line-width reaches the maximum when the polarization direction is perpendicular to the scanning direction. As an application example, the experiments show large-area, uniform LIPSS can be fabricated by controlling the scanning intervals based on the one-pass scanned line-widths. The simulation shows that the initially formed LIPSS structures induce directional surface plasmon polaritons (SPP) scattering along the laser polarization direction, which strengthens the subsequently anisotropic LIPSS fabrication. The simulation results are in good agreement with the experiments, which both support the conclusions of continuous modulations of the LIPSS and scanned line-widths.

Performance of a Prototype Stationary Catadioptric Concentrating Photovoltaic Module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lloyd, John V.; Kozodoy, Peter; Gladden, Christopher

A stationary catadioptric concentrating photovoltaic module with aperture area over 100 cm2, geometric concentration of 180x, and collection within 60° of polar incidence was designed, prototyped, and characterized. The module performance followed modeling closely with a peak power conversion efficiency of 26% for direct irradiance. Tracking of the sun is accomplished via translational micro-tracking completely internal to the module, avoiding the cost and complexity of mechanical two-axis trackers that point towards the sun. This study demonstrates the potential for concentrating photovoltaic modules with significantly higher efficiency than industry standard silicon photovoltaic modules that could be installed in stationary configurations onmore » rooftops.« less

Performance of a Prototype Stationary Catadioptric Concentrating Photovoltaic Module

DOE PAGES

Lloyd, John V.; Kozodoy, Peter; Gladden, Christopher; ...

2018-03-28

A stationary catadioptric concentrating photovoltaic module with aperture area over 100 cm2, geometric concentration of 180x, and collection within 60° of polar incidence was designed, prototyped, and characterized. The module performance followed modeling closely with a peak power conversion efficiency of 26% for direct irradiance. Tracking of the sun is accomplished via translational micro-tracking completely internal to the module, avoiding the cost and complexity of mechanical two-axis trackers that point towards the sun. This study demonstrates the potential for concentrating photovoltaic modules with significantly higher efficiency than industry standard silicon photovoltaic modules that could be installed in stationary configurations onmore » rooftops.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wohlgemuth, J.

Description and history of the IEC 61215 qualification test, what it accomplishes, and what it does not accomplish that would be useful to the community. The commercial success of PV is based on long term reliability of the PV modules. Today's modules are typically qualified/certified to: (1) IEC 61215 for Crystalline Silicon Modules; (2) IEC 61646 for Thin Film Modules; and (3) IEC 62108 for CPV Modules. These qualification tests do an excellent job of identifying design, materials and process flaws that could lead to premature field failures. This talk will provide a summary of how IEC 61215 was developed,more » how well it works and what its limitations are.« less

Some failure modes and analysis techniques for terrestrial solar cell modules

NASA Technical Reports Server (NTRS)

Shumka, A.; Stern, K. H.

1978-01-01

Analysis data are presented on failed/defective silicon solar cell modules of various types and produced by different manufacturers. The failure mode (e.g., internal short and open circuits, output power degradation, isolation resistance degradation, etc.) are discussed in detail and in many cases related to the type of technology used in the manufacture of the modules; wherever applicable, appropriate corrective actions are recommended. Consideration is also given to some failure analysis techniques that are applicable to such modules, including X-ray radiography, capacitance measurement, cell shunt resistance measurement by the shadowing technique, steady-state illumination test station for module performance illumination, laser scanning techniques, and the SEM.

Design and fabrication of solar cell modules

NASA Technical Reports Server (NTRS)

Shaughnessy, T. P.

1978-01-01

A program conducted for design, fabrication and evaluation of twelve silicon solar cell modules is described. The purpose of the program was to develop a module design consistent with the requirements and objectives of JPL specification and to also incorporate elements of new technologies under development to meet LSSA Project goals. Module development emphasized preparation of a technically and economically competitive design based upon utilization of ion implanted solar cells and a glass encapsulation system. The modules fabricated, tested and delivered were of nominal 2 X 2 foot dimensions and 20 watt minimum rating. Basic design, design rationale, performance and results of environmental testing are described.

APPLIED OPTICS. Voltage-tunable circular photogalvanic effect in silicon nanowires.

PubMed

Dhara, Sajal; Mele, Eugene J; Agarwal, Ritesh

2015-08-14

Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit interactions, but purely orbital mechanisms can realize closely related dynamics without breaking spin degeneracies, opening up applications in materials containing only light elements. One such application is the circular photogalvanic effect (CPGE), which is the generation of photocurrents whose magnitude and polarity depend on the chirality of optical excitation. We show that the CPGE can arise from interband transitions at the metal contacts to silicon nanowires, where inversion symmetry is locally broken by an electric field. Bias voltage that modulates this field further controls the sign and magnitude of the CPGE. The generation of chirality-dependent photocurrents in silicon with a purely orbital-based mechanism will enable new functionalities in silicon that can be integrated with conventional electronics. Copyright © 2015, American Association for the Advancement of Science.

Photovoltaic-cell technologies joust for position

NASA Astrophysics Data System (ADS)

Fischetti, M. A.

1984-03-01

The three most promising photovoltaic cell technologies, single-crystal-silicon cells, polycrystalline thin films, and amorphous silicon thin films, are reviewed and discussed in terms of present levels of applicability and the prospects for domination of PV markets in the future. A U.S. DOE research plan running from 1984 to 1988 which aims to produce PV modules that will generate electricity at $.20/kWh by 1988 is outlined, and R & D efforts in Japan and Europe are considered. Although GaAs cells have reached efficiencies to 20 percent in the laboratory, the most successful commercial products have been single-crystal-silicon cells with efficiencies between 11 and 12 percent. It is suggested that the immiment rise of amorphous silicon in the late 1980s may thwart polycrystalline-cell development before it has a chance to flourish.

Cost Benefit Analysis of Integrated COTS Energy- Related Technologies for Army’s Force Provider Module

DTIC Science & Technology

2009-09-01

Year Defense Plan (FYDP), on which the Department of Defense operates, subsequently needs 26 Richard G. Lugar, U.S. Senator for Indiana , “U.S...mature thin-film technologies exist such as Amorphous Silicon (a-Si), Cadmium Telluride (CdTe), and Copper Indium Gallium (di) Selenide (CIGS), all...cheaper processing, lower material costs, and is free of the environmental and health hazard issues of cadmium . Amorphous silicon coupled with

Diffraction-assisted micropatterning of silicon surfaces by ns-laser irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haro-Poniatowski, E., E-mail: haro@xanum.uam.mx; Acosta-Zepeda, C.; Mecalco, G.

2014-06-14

Single-pulse (532 nm, 8 ns) micropatterning of silicon with nanometric surface modulation is demonstrated by irradiating through a diffracting pinhole. The irradiation results obtained at fluences above the melting threshold are characterized by scanning electron and scanning force microscopy and reveal a good agreement with Fresnel diffraction theory. The physical mechanism is identified and discussed on basis of both thermocapillary and chemicapillary induced material transport during the molten state of the surface.

Self-phase-modulation induced spectral broadening in silicon waveguides

NASA Astrophysics Data System (ADS)

Boyraz, Ozdal; Indukuri, Tejaswi; Jalali, Bahram

2004-03-01

The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm2 peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10x higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.

Self-phase-modulation induced spectral broadening in silicon waveguides.

PubMed

Boyraz, Ozdal; Indukuri, Tejaswi; Jalali, Bahram

2004-03-08

The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm(2) peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10x higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.

High-Fidelity Microwave Control of Single-Atom Spin Qubits in Silicon

DTIC Science & Technology

2014-07-08

reality. Every electronic device found in our homes, offices, cars, pockets contains a brain made up of silicon transistors. Naturally, the trillion-dollar...to 6 GHz) and digital IQ modulation. AlazarTech ATS9440 This digitiser samples signals and stores them in memory for analysis, and has a graphical...nanostructures. Spin resonance experiments on donors in enriched 28Si have raised the suspicion that the proximity to a Si/SiO2 interface deteriorates

Gating electrical transport through DNA molecules that bridge between silicon nanogaps.

PubMed

Takagi, Shogo; Takada, Tadao; Matsuo, Naoto; Yokoyama, Shin; Nakamura, Mitsunobu; Yamana, Kazushige

2012-03-21

DNA electronic devices were prepared on silicon-based three-terminal electrodes. Both ends of DNA molecules (400 bp long, mixed sequences) were bridged via chemical bonds between the source-drain nanogap (120 nm) electrodes. S-Shaped I-V curves were obtained and the electric current can be modulated by the gate voltage. The DNA molecules act as semiconducting p-type nanowires in the three-terminal device. This journal is © The Royal Society of Chemistry 2012

A sunny future: expert elicitation of China's solar photovoltaic technologies

NASA Astrophysics Data System (ADS)

Lam, Long T.; Branstetter, Lee; Azevedo, Inês L.

2018-03-01

China has emerged as the global manufacturing center for solar photovoltaic (PV) products. Chinese firms have entered all stages of the supply chain, producing most of the installed solar modules around the world. Meanwhile, production costs are at record lows. The decisions that Chinese solar producers make today will influence the path for the solar industry and its role towards de-carbonization of global energy systems in the years to come. However, to date, there have been no assessments of the future costs and efficiency of solar PV systems produced by the Chinese PV industry. We perform an expert elicitation to assess the technological and non-technological factors that led to the success of China’s silicon PV industry as well as likely future costs and performance. Experts evaluated key metrics such as efficiency, costs, and commercial viability of 17 silicon and non-silicon solar PV technologies by 2030. Silicon-based technologies will continue to be the mainstream product for large-scale electricity generation application in the near future, with module efficiency reaching as high as 23% and production cost as low as 0.24/W. The levelized cost of electricity for solar will be around 34/MWh, allowing solar PV to be competitive with traditional energy resources like coal. The industry’s future developments may be affected by overinvestment, overcapacity, and singular short-term focus.

Micromachined modulator arrays for use in free-space optical communication systems

NASA Astrophysics Data System (ADS)

Lewis, Keith L.; Ridley, Kevin D.; McNie, Mark E.; Smith, Gilbert W.; Scott, Andrew M.

2004-12-01

A summary is presented of some of the design criteria relevant to the realisation of silicon micromachined modulator arrays for use in free-space optical communication systems. Theoretical performance levels achievable are compared with values measured on experimental devices produced using a modified Multi-User MEMS Process (MUMPS). Devices capable of realising modulation rates in excess of 300 kHz are described and their optical characteristics compared with published data on devices based on multiple quantum well technology.

Considerations for a Standardized Test for Potential-Induced Degradation of Crystalline Silicon PV Modules (Presentation)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, P.

2012-03-01

Over the past decade, there have been observations of module degradation and power loss because of the stress that system voltage bias exerts. This results in part from qualification tests and standards note adequately evaluating for the durability of modules to the long-term effects of high voltage bias that they experience in fielded arrays. This talk deals with factors for consideration, progress, and information still needed for a standardized test for degradation due to system voltage stress.

Amorphous-silicon module hot-spot testing

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.

1985-01-01

Hot spot heating occurs when cell short-circuit current is lower than string operating current. Amorphous cell hot spot are tested to develop the techniques required for performing reverse bias testing of amorphous cells. Also, to quantify the response of amorphous cells to reverse biasing. Guidelines are developed from testing for reducing hot spot susceptibility of amorphous modules and to develop a qualification test for hot spot testing of amorphous modules. It is concluded that amorphous cells undergo hot spot heating similarly to crystalline cells. Comparison of results obtained with submodules versus actual modules indicate heating levels lower in actual modules. Module design must address hot spot testing and hot spot qualification test conducted on modules showed no instabilities and minor cell erosion.