Volume 201, Issue13 (October 2004)
Articles in the Current Issue:
Rapid Research Note
Scintillation properties of lead tungstate crystals doped with the monovalent ion lithium
NASA Astrophysics Data System (ADS)
Huang, Yanlin; Seo, Hyo Jin; Zhu, Wenliang
2004-10-01
Lithium-doped PbWO4 crystals have been grown by the Czochralski method. Optical absorbance, X-ray excited luminescence, light yield measurements and X-ray pulsed excited decays have been investigated. Li+ doping has a very good uniformity and could enhance the luminescence of PbWO4, give some contributions to the fast decay components.
NASA Astrophysics Data System (ADS)
Janavičius, A. J.; Mekys, A.; Purlys, R.; Norgėla, Ž.; Daugėla, S.; Rinkūnas, R.
2015-10-01
The soft X-ray photons absorbed in the inner K, L, M shells of Si atoms produce photoelectrons and Auger electrons, thus generating vacancies, interstitials and metastable oxygen complexes. The samples of Czochralski silicon crystals covered with 0.1 μm thickness layer of carbon have been irradiated by X-rays using different voltages of Cu anode of the Russian diffractometer DRON-3M. The influence of X-rays on the formation of point defects and vacancy complexes, and their dynamics in Cz-Si crystals have been studied by infrared absorption. We have measured and calculated dynamics of concentration of carbon and interstitial oxygen using FTIR spectroscopy at room temperature after irradiation by soft X-rays. Using transmittance measurements and nonlinear diffusion theory we have calculated densities increasing for substitutional carbon and interstitial oxygen by reactions and very fast diffusion. The superdiffusion coefficients of carbon in silicon at room temperature generated by X-rays are about hundred thousand times greater than diffusion coefficients obtained for thermodiffusion. Rezumējums: Rentgena staru fotoni, absorbēti Si atoma iekšējos slāņos, izstaro fotoelektronus un Ožē elektronus, ģenerējot vakances, starpmezglu silīcija atomus, vakanču un skābekļa kompleksus. Čohraļska silīcija kristāli, kas pārklāti ar oglekli 0.1 μm biezuma kārtā, tika apstaroti ar rentgena stariem, izmantojot krievu difraktometru DRON-3M. Oglekļa un skābekļa difūzija un koncentrāciju izmaiņa silīcijā tika izmērīta izmantojot infrasarkano staru FTIR spektroskopiju. Rentgena staru ģenerētās ļoti ātrās oglekļa difūzijas vai superdifūzijas koeficients istabas temperatūrā silīcijā ir simtiem tūkstošu reižu lielāks nekā termodifūzijas gadījumā.
Serrano, María Dolores; Cascales, Concepción; Han, Xiumei; Zaldo, Carlos; Jezowski, Andrzej; Stachowiak, Piotr; Ter-Gabrielyan, Nikolay; Fromzel, Viktor; Dubinskii, Mark
2013-01-01
Undoped and Er-doped NaY(WO4)2 disordered single crystals have been grown by the Czochralski technique. The specific heat and thermal conductivity (κ) of these crystals have been characterized from T = 4 K to 700 K and 360 K, respectively. It is shown that κ exhibits anisotropy characteristic of single crystals as well as a κ(T) behavior observed in glasses, with a saturation mean free phonon path of 3.6 Å and 4.5 Å for propagation along a and c crystal axes, respectively. The relative energy positions and irreducible representations of Stark Er3+ levels up to 4G7/2 multiplet have been determined by the combination of experimental low (<10 K) temperature optical absorption and photoluminescence measurements and simulations with a single-electron Hamiltonian including both free-ion and crystal field interactions. Absorption, emission and gain cross sections of the 4I13/2↔4I15/2 laser related transition have been determined at 77 K. The 4I13/2 Er3+ lifetime (τ) was measured in the temperature range of 77–300 K, and was found to change from τ (77K) ≈ 4.5 ms to τ (300K) ≈ 3.5 ms. Laser operation is demonstrated at 77 K and 300 K by resonantly pumping the 4I13/2 multiplet at λ≈1500 nm with a broadband (FWHM≈20 nm) diode laser source perfectly matching the 77 K crystal 4I15/2 → 4I13/2 absorption profile. At 77 K as much as 5.5 W of output power were obtained in π-polarized configuration with a slope efficiency versus absorbed pump power of 57%, the free running laser wavelength in air was λ≈1611 nm with the laser output bandwidth of 3.5 nm. The laser emission was tunable over 30.7 nm, from 1590.7 nm to 1621.4 nm, for the same π-polarized configuration. PMID:23555664
Assessment of gadolinium calcium oxoborate (GdCOB) for laser applications
NASA Astrophysics Data System (ADS)
Bajor, A. L.; Kisielewski, J.; Kłos, A.; Kopczyński, K.; Łukasiewicz, T.; Mierczyk, J.; Młyńczak, J.
2011-12-01
Increasing demand for growing high quality laser crystals puts a question about their most important parameters that one should concentrate on to get a desired product which will exhibit best properties in practical use. And by no means, this is a simple question. Apart of the usual lasing properties associated with a special dopant in the host material itself, one needs to consider another two lasing phenomena, namely second (SHG) and higher harmonic generation, and self-frequency doubling (SFD). Not necessarily all of these three can meet altogether in the same host material to yield in its best appearance in every case. We have made a review of basic properties of gadolinium oxoborate GdCa4O(BO3)3 (GdCOB) crystal and came to the conclusion that, currently, as a host material this is probably the best in all of its lasing applications. Although GdCOB has low thermal conductivity, which requires a suitable cooling, on the other hand it has got small thermo-optic coefficients which govern good operation in SHG and SFD experiments. Two inch dia. Nd-doped crystals were grown by the Czochralski technique. Since a large discrepancy in the literature exists on exact values of nonlinear coefficients, one is never sure about this whether theoretically predicted phase-matching angles (PMA) are those that are really optimal. Besides, none has yet measured the values of nonlinear coefficients as a function of doping concentration. Therefore we have not decided to cut numerous differently oriented samples for generation of different wavelengths in SHG and SFD, but rather tried to generate different wavelengths from the same samples. We have also not paid special attention to get highest possible conversion efficiencies. However, we have concentrated our attention on potential use of the core region in laser technique. Unlike in YAG crystals, when the core is by all means a parasitic structure, we discovered that the core region in GdCOB, that majority of investigators are even not aware of its presence in the crystal, can be also useful in laser technique. According to our best knowledge, a SHG of red light in this work is the second reported case in the world-wide literature.
Growth of Si spherical crystals and the surface oxidation (M-9)
NASA Technical Reports Server (NTRS)
Nishinaga, Tatau
1993-01-01
Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting materials. For instance, the integrated circuits (IC), which are used in almost all electronic equipments such as TV, tape recorders, audio amplifiers, etc., are made after various processings of Si single crystal wafers. In these wafers, the same controlled amounts of impurities are added and the uniformities in their distributions are extremely important. Growth under microgravity makes it possible to eliminate the buoyancy-driven convection in the melt, which is one of the main origins of convections which results in non-uniformity of the impurity. Another source of convection is known as Marangoni convection which is driven on the free surface when a temperature gradient occurs. One of the merits of microgravity experimentation is that the detailed study of this convection becomes possible. Another important advantage of microgravity is that growth of crystals without a crucible is possible. This makes it possible to study melt growth without the strain which is usually introduced on the ground. Nevertheless, we should repeat and analyze many growth experiments in space to get reliable results. However, since in the FMPT, the time for the experiment is limited, we plan to carry out two kinds of very simple and basic experiments as the first step for the semiconductor growth experiment. In the first experiment, we use single crystal Si sphere as the starting material and as shown, this sphere is heated in the furnace at a slightly higher temperature than the melting point. After the melting front moves nearly half way to its center, the temperature is decreased to stop the melting and to start the growth from the seed for which we use the unmelted solid party of the sphere. The sphere is centered by quartz protuberances inside of the quartz crucible. There exists the possibility of temperature fluctuations being introduced when the molten sphere occasionally touches the protuberances. The total time needed for the melting and the growth processes is estimated to be 30 minutes. Infrared emission from the sphere is monitored in order to prevent the accidental loss of the central solid core. The schematical illustration of the second experient is shown. A single crystal, Si rod is used as the starting material. In the first stage, the rod is melted from one end to obtain a liquid sphere. In the second stage, the single crystal is grown by decreasing the temperature from the unmelted part of the rod which is used as the seed. The second experient somewhat resembles the Czochralski method used on the ground; however, in the space experiment, no crucible is employed and the temperature uniformity is much superior. In both experiments, phosphorous is doped to allow observation of the change in the shape of the liquid solid interface during crystal growth and the impurity striations, if any.
Development of trivalent ytterbium doped fluorapatites for diode-pumped laser applications
NASA Astrophysics Data System (ADS)
Bayramian, Andrew James
2000-11-01
A major motivator of this work is the Mercury Project, a one kilowatt diode-pumped solid-state laser system under development at Lawrence Livermore National Laboratory (LLNL), which incorporates ytterbium doped strontium fluorapatite, Sr5(PO4)3F (S-FAP), as the amplifier gain medium. The primary focus of this thesis is a full understanding of the properties of this material, which is necessary for proper design and modeling of the system. Ytterbium-doped fluorapatites were investigated at LLNL prior to this work and found to be ideal candidate materials for high-power amplifier systems providing high absorption and emission cross sections, long radiative lifetimes, and high efficiency. A family of barium substituted S-FAP crystals was grown in an effort to modify the pump and emission bandwidths for application to broadband diode pumping and short pulse generation. Crystals of Yb 3+:Srs5-xBax(PO4) 3F where x < 1 showed homogeneous lines offering 8.4 nm (1.8X enhancement) of absorption bandwidth and 6.9 nm (1.4X enhancement) of emission bandwidth. The gain saturation fluence of Yb:S-FAP was measured to be 3.2 J/cm 2 with homogeneous extraction using a pump-probe experiment where the probe laser was a high intensity Q-switched master oscillator power amplifier system. The crystal quality of Czochralski grown Yb:S-FAP boules, which is effected by defects such as cracking, cloudiness, bubble core, slip dislocations, and anomalous absorption, was investigated interferometrically and quantified by means of Power Spectral Density (PSD) plots. Stimulated Raman Scattering (SRS) losses were evaluated by first measuring the SRS gain coefficient to be 1.3 cm/GW, then modeling the losses in the Mercury amplifier system. Countermeasures including the addition of bandwidth to the extraction beam and wedging of amplifier surfaces are shown to reduce the SRS losses allowing efficient laser gain extraction at higher intensities. Finally, an efficient Q-switched Yb:S-FAP oscillator was developed which operates three-level at 985 nm with a 21% slope efficiency. Frequency conversion of the 985 nm light to the 2nd harmonic at 492.5 nm was achieved with a 31% conversion efficiency. A diode pumped, doubled Yb:S-FAP laser at 492.5 nm would make possible a compact, efficient, high-power blue laser source.
NASA Astrophysics Data System (ADS)
Londos, C. A.; Sgourou, E. N.; Chroneos, A.
2012-12-01
Infrared spectroscopy was used to study the production and evolution of oxygen-vacancy (VOn for n = 1, 2, 3 and VmO for m = 1, 2, 3) clusters, in electron-irradiated Czochralski silicon (Cz-Si) samples, doped with isovalent dopants. It was determined that the production of the VO pair is enhanced in Ge-doped Si but is suppressed in Sn and Pb-doped Si. The phenomenon is discussed in terms of the competition between isovalent dopants and oxygen atoms in capturing vacancies in the course of irradiation. In the case of Ge, only transient GeV pairs form, leading finally to an increase of the VO production. Conversely, for Sn and Pb the corresponding pairs with vacancies are stable, having an opposite impact on the formation of VO pairs. Regarding V2O and V3O clusters, our measurements indicate that Ge doping enhances their formation, although Sn and Pb dopants suppress it. Similar arguments as those for the VO pair could be put forward, based on the effect of isovalent impurities on the availability of vacancies. Additionally, it was found that the conversion ratio of VO to VO2 decreases as the covalent radius of the isovalent dopant increases. These results are discussed in terms of the local strains introduced by the isovalent dopants in the Si lattice. These local strains affect the balance of the intrinsic defects created as a result of irradiation, as well as the balance between the two main reactions (VO + Oi → VO2 and VO + SiI → Oi) participating in the VO annealing, leading finally to a decrease of the VO2 production. The larger the covalent radius of the isovalent dopant (rGe < rSn < rPb), the larger the introduced strains in the lattice and then the less the VO2 formation in accordance with our experimental results. Interestingly, an opposite trend was observed for the conversion ratio of VO2 to VO3. The phenomenon is attributed to the enhanced diffusivity of oxygen impurity as a result of the presence of isovalent dopants, leading to an enhanced formation of the VO3 cluster. The results indicate that isovalent doping of Si is an effective way to control the formation of the deleterious oxygen-vacancy clustering that can affect Si-based devices.
NASA Technical Reports Server (NTRS)
Becia, Piotr; Wiegel, Michaela E. K.
2004-01-01
A research carried out under Award Number NAG8-1487 was aimed at to the design, conduct and analysis of experiments directed at the identification and control of gravitational effects on crystal growth, segregation and defect formation in the Sillenite system: bismuth silicate (Bi(12)SiO(20)). Correlation analyses was conducted in order to establish the influence of gravity related defects introduced during crystal growth on critical, application specific properties. Achievement of the states objective was conducted during the period from Feb. 01, 1998 to Dec. 31, 2003 with the following anticipated milestones: 1. Establishment of capabilities for (a) reproducible Czochralski and Bridgman-type growth of BSO single crystals and (b) for comprehensive analysis of crystalline and chemical defects as well as for selective property characterization of grown crystals (year 1). 2. Design and execution of critical space growth experiment(s) based on analyses of prefatory space results (experiments aimed at establishing the viability of planned approaches and procedures) and on unresolved issues related to growth, segregation and defect formation associated with conventional growth in Bridgman geometries. Comparative analysis of growth under conventional and under mu-g conditions; identification of gravity related defect formation during conventional Bridgman growth and formulation of approaches for their control (years 2 and 3). Development of charge confinement system which permits growth interface demarcation (in a mu-g environment) as well as minimization of confinement related stress and contamination during growth; design of complementary mu-g growth experiments aimed at quantitative mu-g growth and segregation analyses (year 4). 3. Conduct of quantitative mu-g growth experiments directed at: (a) identification and control of gravity related crystalline and chemical defect formation during single crystal growth of Bi(12)SiO(20) and at (b) defect engineering -the development of approaches to the controlled generation during crystal growth of specified point defects in homogeneous distribution (year 5). The proposed research places focus on a class of materials which have outstanding electrical and optical properties but have so far failed to reach their potential, primarily because of our inability to control adequately their stoichiometry and crystal defect formation as well as confinement related contamination and lattice stress.
Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM
NASA Astrophysics Data System (ADS)
Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il
2016-03-01
Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low light scattering. Likewise, SEM cannot be used effectively for post-inspection defect review and classification of these very shallow types of defects. To verify and obtain accurate shape and three-dimensional information of those defects, automatic defect review AFM (ADR AFM) is utilized for accurate locating and imaging of DOI. In ADR AFM, non-contact mode imaging is used for non-destructive characterization and preserving tip sharpness for data repeatability and reproducibility. Locating DOI and imaging are performed automatically with a throughput of many defects per hour. Topography images of DOI has been collected and compared with SEM images. The ADR AFM has been shown as a non-destructive metrology tool for defect review and obtaining three-dimensional topography information.
Development of Trivalent Ytterbium Doped Fluorapatites for Diode-Pumped Laser Applications
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bayramian, Andrew J.
One of the major motivators of this work is the Mercury Project, which is a 1 kW scalable diode-pumped solid-state laser system under development at Lawrence Livermore National Laboratory (LLNL). Major goals include 100 J pulses, 10% wallplug efficiency, 10 Hz repetition rate, and a 5 times diffraction limited beam. To achieve these goals the Mercury laser incorporates ytterbium doped Sr 5(PO 4) 3F (S-FAP) as the amplifier gain medium. The primary focus of this thesis is a full understanding of the properties of this material which are necessary for proper design and modeling of the system. Ytterbium doped fluorapatites,more » which were previously investigated at LLNL, were found to be ideal candidate materials for a high power amplifier systems providing high absorption and emission cross sections, long radiative lifetimes, and high efficiency. A family of barium substituted S-FAP crystals were grown in an effort to modify the pump and emission bandwidths for application to broadband diode pumping and short pulse generation. Crystals of Yb 3+:Sr 5-xBa x(PO 4) 3F where x < 1 showed homogeneous lines offering 8.4 nm (1.8 times enhancement) of absorption bandwidth and 6.9 nm (1.4 times enhancement) of emission bandwidth. The gain saturation fluence of Yb:S-FAP was measured to be 3.2 J/cm 2 using a pump-probe experiment where the probe laser was a high intensity Q-switched master oscillator power amplifier system. The extraction data was successfully fit to a homogeneous extraction model. The crystal quality of Czochralski grown Yb:S-FAP crystals, which have been plagued by many defects such as cracking, cloudiness, bubble core, slip dislocations, and anomalous absorption, was investigated interferometrically and quantified by means of Power Spectral Density (PSD) plots. The very best crystals grown to date were found to have adequate crystal quality for use in the Mercury laser system. In addition to phase distortions which are fixed by material growth, thermal loading of the S-FAP media also leads to distortions due to thermal expansion, α, temperature dependent refractive index, ∂n/∂T, and stress optic effects. The stress optic coefficients necessary for modeling thermal distortions in Yb:S-FAP slab amplifiers were measured giving q 33 = 0.308 x 10 -12 Pa -1, and q 31 = 0.936 x 10 -12 Pa -1. Nonlinear optical losses due to high intensity laser interaction with S-FAP were evaluated including Stimulated Raman Scattering (SRS) and Stimulated Brillouin Scattering. The SRS gain coefficient was measured to be 1.3 cm/GW. The SRS losses in the Mercury amplifier system were successfully modeled and shown to be an issue for high-energy short pulse operation. Countermeasures including the addition of bandwidth to the extraction beam and wedging of amplifier surfaces would allow operation of the Mercury laser at 100 J and 2 ns output below SRS threshold. A simple model of SBS losses in the Mercury laser system shows SBS will also be a problem, however suppression is possible with the introduction of moderate bandwidth (relative to the SRS case). Finally, a Q-switched Yb:S-FAP oscillator was developed which operates three-level at 985 nm with a 21% slope efficiency. Frequency conversion of the 985 nm light to the 2nd harmonic at 492.5 nm was achieved with a 31% conversion efficiency. A diode pumped, doubled Yb:S-FAP laser at 492.5 nm would make a compact efficient blue laser source.« less
Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage
NASA Astrophysics Data System (ADS)
Kulshreshtha, Prashant Kumar
This thesis focuses on the fundamental understanding of stress-modified crack-propagation in photovoltaic (PV) silicon in relation to the critical issue of PV silicon "wafer breakage". The interactions between a propagating crack and impurities/defects/residual stresses have been evaluated for consequential fracture path in a thin PV Si wafer. To investigate the mechanism of brittle fracture in silicon, the phase transformations induced by elastic energy released at a propagating crack-tip have been evaluated by locally stressing the diamond cubic Si lattice using a rigid Berkovich nanoindenter tip (radius ≈50 nm). Unique pressure induced phase transformations and hardness variations have been then related to the distribution of precipitates (O, Cu, Fe etc.), and the local stresses in the wafer. This research demonstrates for the first time the "ductile-like fracture" in almost circular crack path that significantly deviates from its energetically favorable crystallographic [110](111) system. These large diameter (≈ 200 mm) Si wafers were sliced to less than 180 microm thickness from a Czochralski (CZ) ingot that was grown at faster than normal growth rates. The vacancy (vSi) driven precipitation of oxygen at enhanced thermal gradients in the wafer core develops large localized stresses (upto 100 MPa) which we evaluated using Raman spectral analysis. Additional micro-FTIR mapping and microscopic etch pit measurements in the wafer core have related the observed crack path deviations to the presence of concentric ring-like distributions of oxygen precipitates (OPs). To replicate these "real-world" breakage scenarios and provide better insight on crack-propagation, several new and innovative tools/devices/methods have been developed in this study. An accurate quantitative profiling of local stress, phase changes and load-carrying ability of Si lattice has been performed in the vicinity of the controlled micro-cracks created using micro-indentations to represent the surface/edge micro-cracks (i.e. sources of crack initiation). The low load (<10mN) nanoindentations using Hysitron Triboindenter RTM have been applied to estimate the zone of crack-propagation related plastic deformation and amorphization around the radial or the lateral cracks. The gradual reduction in hardness due to local stress field and phase change around the crack has been established using electron back scattered diffraction (EBSD), atomic force microscopy (AFM) and Raman spectroscopy, respectively, at nano- and micro-scale. The load (P) vs. displacement (h) curves depict characteristic phase transformation events (eg. elbow or pop-out) depending on the sign of residual stress in the silicon lattice. The formation of Si-XII/III phases (elastic phases) in large volumes during indentation of compressed Si lattice have been discussed as an option to eliminate the edge micro-cracks formed during wafer sawing by ductile flow. The stress gradient at an interface, which can be a grain-boundary (GB), twin or a interface between silicon and precipitate, has been evaluated for crack path modification. An direct-silicon-bonded (DSB) based ideal [110]/[100] interface has been examined to study the effect of crystallographic orientation variation across a planar silicon 2D boundary. Using constant source diffusion/annealing process, Fe and Cu impurities have been incorporated in model [110]/[100]GB to provide equivalence to a real decorated multi-crystalline grain boundary. We found that Fe precipitates harden the undecorated GB structure, whereas Cu precipitates introduce dislocation-induced plasticity to soften it. Aluminum Schottky diodes have been evaporated on the DSB samples to sensitively detect the instantaneous current response from the phase-transformed Si under nanoindenter tip. The impact of metallic impurity and their precipitates on characteristic phase transformations (i.e. pop-in or pop-out) demonstrate that scattered distribution of large Cu-precipitates (upto 50 nm) compresses Si-lattice to facilitate Si-XII/III formations, i.e. high pressure ductile phases. Sweeping voltage measurements at a given load determine that Si lattice has to be stressed beyond 1 mN to complete the Si-I (semiconducting) to Si-II (ohmic) phase changes. Above 1 mN load DSB sample has a varistor-like behavior due to higher grain-boundary resistance from interfacial states. The precipitate defect structure stimulated stresses at the bulk Si lattice or grain boundary modify the rate of elastic energy release at the crack-tip and associated phase change and hardness values in response to external loading. The systematic approach in this thesis elucidates that the interfacial surface area between Si-lattice and precipitate plays pivotal role in defining extent of stresses in the silicon, i.e. smaller precipitates in higher densities are severe than few larger volume precipitates. The finding of high-pressure ductile phase formation during loading of compressed silicon structure has been suggested to PV industry as a prospective candidate for reducing the wafer breakage and allowing larger handling stresses.
ERIC Educational Resources Information Center
Cui, Zhongmin; Kolen, Michael J.
2009-01-01
This article considers two new smoothing methods in equipercentile equating, the cubic B-spline presmoothing method and the direct presmoothing method. Using a simulation study, these two methods are compared with established methods, the beta-4 method, the polynomial loglinear method, and the cubic spline postsmoothing method, under three sample…
Comparison of DNA extraction methods for meat analysis.
Yalçınkaya, Burhanettin; Yumbul, Eylem; Mozioğlu, Erkan; Akgoz, Muslum
2017-04-15
Preventing adulteration of meat and meat products with less desirable or objectionable meat species is important not only for economical, religious and health reasons, but also, it is important for fair trade practices, therefore, several methods for identification of meat and meat products have been developed. In the present study, ten different DNA extraction methods, including Tris-EDTA Method, a modified Cetyltrimethylammonium Bromide (CTAB) Method, Alkaline Method, Urea Method, Salt Method, Guanidinium Isothiocyanate (GuSCN) Method, Wizard Method, Qiagen Method, Zymogen Method and Genespin Method were examined to determine their relative effectiveness for extracting DNA from meat samples. The results show that the salt method is easy to perform, inexpensive and environmentally friendly. Additionally, it has the highest yield among all the isolation methods tested. We suggest this method as an alternative method for DNA isolation from meat and meat products. Copyright © 2016 Elsevier Ltd. All rights reserved.
NASA Astrophysics Data System (ADS)
Li, Yanran; Chen, Duo; Zhang, Jiwei; Chen, Ning; Li, Xiaoqi; Gong, Xiaojing
2017-09-01
GIS (gas insulated switchgear), is an important equipment in power system. Partial discharge plays an important role in detecting the insulation performance of GIS. UHF method and ultrasonic method frequently used in partial discharge (PD) detection for GIS. It is necessary to investigate UHF method and ultrasonic method for partial discharge in GIS. However, very few studies have been conducted on the method combined this two methods. From the view point of safety, a new method based on UHF method and ultrasonic method of PD detection for GIS is proposed in order to greatly enhance the ability of anti-interference of signal detection and the accuracy of fault localization. This paper presents study aimed at clarifying the effect of the new method combined UHF method and ultrasonic method. Partial discharge tests were performed in laboratory simulated environment. Obtained results show the ability of anti-interference of signal detection and the accuracy of fault localization for this new method combined UHF method and ultrasonic method.
The multigrid preconditioned conjugate gradient method
NASA Technical Reports Server (NTRS)
Tatebe, Osamu
1993-01-01
A multigrid preconditioned conjugate gradient method (MGCG method), which uses the multigrid method as a preconditioner of the PCG method, is proposed. The multigrid method has inherent high parallelism and improves convergence of long wavelength components, which is important in iterative methods. By using this method as a preconditioner of the PCG method, an efficient method with high parallelism and fast convergence is obtained. First, it is considered a necessary condition of the multigrid preconditioner in order to satisfy requirements of a preconditioner of the PCG method. Next numerical experiments show a behavior of the MGCG method and that the MGCG method is superior to both the ICCG method and the multigrid method in point of fast convergence and high parallelism. This fast convergence is understood in terms of the eigenvalue analysis of the preconditioned matrix. From this observation of the multigrid preconditioner, it is realized that the MGCG method converges in very few iterations and the multigrid preconditioner is a desirable preconditioner of the conjugate gradient method.