Electromigration process for the purification of molten silicon during crystal growth

DOEpatents

Lovelace, Alan M. Administrator of the National Aeronautics and Space; Shlichta, Paul J.

1982-01-01

A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal growth according to Czochralski techniques and edge-defined film-fed growth (EFG) conditions. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. In the EFG crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities are thereby migrated to one side only of the crystal ribbon. The impurities may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

NASA Technical Reports Server (NTRS)

1981-01-01

The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

Investigation of Backside Textures for Genesis Solar Wind Silicon Collectors

NASA Technical Reports Server (NTRS)

Gonzalez, C. P.; Burkett, P. J.; Rodriguez, M. C.; Allton, J. H.

2014-01-01

Genesis solar wind collectors were comprised of a suite of 15 types of ultrapure materials. The single crystal, pure silicon collectors were fabricated by two methods: float zone (FZ) and Czochralski (CZ). Because of slight differences in bulk purity and surface cleanliness among the fabrication processes and the specific vendor, it is desirable to know which variety of silicon and identity of vendor, so that appropriate reference materials can be used. The Czochralski method results in a bulk composition with slightly higher oxygen, for example. The CZ silicon array wafers that were Genesis-flown were purchased from MEMC Electronics. Most of the Genesis-flown FZ silicon was purchased from Unisil and cleaned by MEMC, although a few FZ wafers were acquired from International Wafer Service (IWS).

Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

NASA Astrophysics Data System (ADS)

Stockmeier, L.; Kranert, C.; Raming, G.; Miller, A.; Reimann, C.; Rudolph, P.; Friedrich, J.

2018-06-01

During the growth of [0 0 1]-oriented, heavily n-type doped silicon crystals by the Czochralski (CZ) method dislocation formation occurs frequently which leads to a reduction of the crystal yield. In this publication the evolution of the solid-liquid interface and the formation of the {1 1 1} edge facets are analyzed on a microscopic scale as possible reason for dislocation formation in heavily n-type doped [0 0 1]-oriented CZ crystals. A correlation between the length of the {1 1 1} edge facets and the curvature of the interface is found. They ultimately promote supercooled areas and interrupted growth kinetics, which increase the probability for dislocation formation at the boundary between the {1 1 1} edge facets and the atomically rough interface.

Optical characteristics of novel bulk and nanoengineered laser host materials

NASA Astrophysics Data System (ADS)

Prasad, Narasimha S.; Sova, Stacey; Kelly, Lisa; Bevan, Talon; Arnold, Bradley; Cooper, Christopher; Choa, Fow-Sen; Singh, N. B.

2018-02-01

The hexagonal apatite single crystals have been investigated for their applications as laser host materials. Czochralksi and flux growth methods have been utilized to obtain single crystals. For low temperature processing (<100 0C), several techniques for crystal growth have been developed. The hexagonal apatite structure (space group P63/m) is characteristic of several compounds, some of which have extremely interesting and useful properties as laser hosts and bone materials. Calcium lanthanum silicate (Nd-doped) and lanthanum aluminate material systems were studied in detail. Nanoengineered calcium and lanthanum based silicates were synthesized by a solution method and their optical and morphological characteristics were compared with Czochralski grown bulk hydroxyapatite single crystals. Materials were evaluated by absorbance, fluorescence and Raman characteristics. Neodymium, iron and chromium doped crystals grown by a solution method showed weak but similar optical properties to that of Czochralski grown single crystals.

Determination of Low C Concentration in Czochralski-Grown Si for Solar Cell Applications by Liquid-N-Temperature Photoluminescence After Electron Irradiation

NASA Astrophysics Data System (ADS)

Tajima, Michio; Kiuchi, Hirotatsu; Higuchi, Fumito; Ishikawa, Yoichiro; Ogura, Atsushi

2018-05-01

The effectiveness of liquid-N-temperature photoluminescence (PL) after electron irradiation for quantification of low-level C has been demonstrated in Czochralski (CZ)-grown Si for solar cell applications. We focused on the intensity ratios of the C- and G-lines to the band-edge emission, which were used as indexes for determining the C concentration in the PL activation method at 4.2 K. Good correlations of the ratio between 4.2 K and 77 K were obtained for samples with similar P and O concentrations after electron irradiation at fluence varying from 1 × 1015 cm-2 to 10 × 1015 cm-2. We applied the present method to quantify the C concentration along the solidified fraction in CZ-Si ingots.

LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

NASA Technical Reports Server (NTRS)

Rea, S. N.

1979-01-01

A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

Cold crucible Czochralski for solar cells

NASA Technical Reports Server (NTRS)

Trumble, T. M.

1982-01-01

The efficiency and radiation resistance of present silicon solar cells are a function of the oxygen and carbon impurities and the boron doping used to provide the proper resistivity material. The standard Czochralski process used grow single crystal silicon contaminates the silicon stock material due to the use of a quartz crucible and graphite components. The use of a process which replaces these elements with a water cooled copper to crucible has provided a major step in providing gallium doped (100) crystal orientation, low oxygen, low carbon, silicon. A discussion of the Cold Crucible Czochralski process and recent float Zone developments is provided.

Cold crucible Czochralski for solar cells

NASA Astrophysics Data System (ADS)

Trumble, T. M.

The efficiency and radiation resistance of present silicon solar cells are a function of the oxygen and carbon impurities and the boron doping used to provide the proper resistivity material. The standard Czochralski process used grow single crystal silicon contaminates the silicon stock material due to the use of a quartz crucible and graphite components. The use of a process which replaces these elements with a water cooled copper to crucible has provided a major step in providing gallium doped (100) crystal orientation, low oxygen, low carbon, silicon. A discussion of the Cold Crucible Czochralski process and recent float Zone developments is provided.

Digital Control of the Czochralski Growth of Gallium Arsenide. System Reference Manual. Valid for Czochralski Growth Controller Software Version 2.4

DTIC Science & Technology

1988-01-04

Controller Routine .......... ........................ 405 -viii- ’ O, ...1 . • N SList of Illustrations i p List of Illustrations . Fig. 1: A...J------ - - - 6 - -- -w -- -w -r n . w ~ - P a CGCS Program Versions ~CGCS Program Versions This section describes the "evolution" of the...8217 ~- 134 - ,d" - 1’ , n "W , ’." " a 4 r P . ’ ,’ r t r 1 "."." , . L t * 5.1 CGCS Concept and Structure 5. The Czochralski Growth Control System Software

High-T sub c thin films on low microwave loss alkaline-rare-earth-aluminate crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolewski, R.; Gierlowski, P.; Kula, W.

1991-03-01

This paper reports on the alkaline-rare-earth aluminates (K{sub 2}NiF{sub 4}-type perovskites) which are an excellent choice as the substrate material for the growth of high-T{sub c} thin films suitable for microwave and far-infrared applications. The CaNdAlO{sub 4}, and SrLaAlO{sub 4} single crystals have been grown by Czochralski pulling and fabricated into the form of (001) oriented wafers. The Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O films deposited on these substrates by a single-target magnetron sputtering exhibited very good superconducting and structural properties.

Structure, spectroscopic properties and laser performance of Nd:YNbO4 at 1066 nm

NASA Astrophysics Data System (ADS)

Ding, Shoujun; Peng, Fang; Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Sun, Dunlu; Dou, Renqin; Sun, Guihua

2016-12-01

We have demonstrated continuous wave (CW) laser operation of Nd:YNbO4 crystal at 1066 nm for the first time. A maximum output power of 1.12 W with the incident power of 5.0 W is successfully achieved corresponding to an optical-to-optical conversion efficiency of 22.4% and a slope efficiency of 24.0%. The large absorption cross section (8.7 × 10-20 cm2) and wide absorption band (6 nm) at around 808 nm indicates the good pumping efficiency by laser diodes (LD). The small emission cross section (29 × 10-20 cm2) and relative long lifetime of the 4F3/2 → 4I11/2 transition indicates good energy storage capacity of Nd:YNbO4. Moreover, the raw materials of Nd:YNbO4 are stable, thus, it can grow high-quality and large-size by Czochralski (CZ) method. Therefore the Nd:YNbO4 crystal is a potentially new laser material suitable for LD pumping.

Boron codoping of Czochralski grown lutetium aluminum garnet and the effect on scintillation properties

NASA Astrophysics Data System (ADS)

Foster, Camera; Koschan, Merry; Wu, Yuntao; Melcher, Charles L.

2018-03-01

Many single crystal scintillators, such as Lu3Al5O12, have intrinsic defects that impede their performance. In addition to doping with activators such as cerium, codoping can be used to improve the scintillation properties of a variety of scintillators. In particular, boron has been shown to improve the light yield, energy resolution, and self-absorption of other garnet scintillators, such as GGAG, when incorporated into the lattice via codoping. In this study, single crystals of LuAG: 0.2 at.% Ce codoped with varying concentrations of boron were grown via the Czochralski method at a rate of 1.2 mm/h. Results will show the effect boron codoping has on the scintillation properties of LuAG: Ce, including light yield, decay time, and self-absorption.

Single crystal growth of Ga3Ni2 by the Czochralski method

NASA Astrophysics Data System (ADS)

Wencka, Magdalena; Pillaca, Mirtha; Gille, Peter

2016-09-01

Intermetallic compounds have proved to be interesting alternatives to heterogeneous catalysts prepared from pure noble metals or their alloys. As to study their intrinsic properties, to determine the crystalline structures of specific surfaces and finally to understand elementary processes of heterogeneous catalysis, single crystals of these intermetallics are needed. Inspired by the recent discovery of Ga-Ni catalysts for carbon dioxide reduction to methanol, we have grown for the first time cm3-size single crystals of trigonal Ga3Ni2. We report in detail on the synthesis and Czochralski growth from high-temperature solution using Ga as native solvent. Inclusion formation of Ga-rich fluid proved to be the most severe problem that was minimized by using an extremely low pulling rate down to 25 μm/h.

Modeling of dislocation dynamics in germanium Czochralski growth

NASA Astrophysics Data System (ADS)

Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

2017-06-01

Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system

NASA Astrophysics Data System (ADS)

Hur, Min-Jae; Han, Xue-Feng; Choi, Ho-Gil; Yi, Kyung-Woo

2017-09-01

The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in the crystal. In particular, the dislocation density has a higher value in sapphire grown by the Czochralski (CZ) method than by other methods. In the present study, we predict a decreased value for the convexity and thermal gradient at the crystal front (CF) through the use of an additional heater in an induction-heated CZ system. In addition, we develop a solute concentration model by which the location of bubble formation in CZ growth is calculated, and the results are compared with experimental results. We further calculate the location of bubble entrapment corresponding with the use of an additional heater. We find that sapphire crystal growth with an additional heater yields a decreased thermal gradient at the CF, together with decreased CF convexity, improved energy efficiency, and improvements in terms of bubble formation location.

Method for fabricating silicon cells

DOEpatents

Ruby, Douglas S.; Basore, Paul A.; Schubert, W. Kent

1998-08-11

A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

Method for fabricating silicon cells

DOEpatents

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Real time thermal imaging for analysis and control of crystal growth by the Czochralski technique

NASA Technical Reports Server (NTRS)

Wargo, M. J.; Witt, A. F.

1992-01-01

A real time thermal imaging system with temperature resolution better than +/- 0.5 C and spatial resolution of better than 0.5 mm has been developed. It has been applied to the analysis of melt surface thermal field distributions in both Czochralski and liquid encapsulated Czochralski growth configurations. The sensor can provide single/multiple point thermal information; a multi-pixel averaging algorithm has been developed which permits localized, low noise sensing and display of optical intensity variations at any location in the hot zone as a function of time. Temperature distributions are measured by extraction of data along a user selectable linear pixel array and are simultaneously displayed, as a graphic overlay, on the thermal image.

Luminescence and Scintillation Properties of Czochralski Grown LYGBO Crystals

NASA Astrophysics Data System (ADS)

Fawad, U.; Kim, Hong Joo; Park, H.; Kim, Sunghwan; Khan, Sajid

2016-06-01

Mixed crystals Li6YxGd1-x(BO3)3:Ce3+ (LYGBO) (where, x = 0.0, 0.2, 0.5, 0.8, 1.0) are grown by using Czochralski method with different proportions of Li6Y(BO3)3 and Li6Gd(BO3)3. All crystals are doped with 3 mole% optimized concentrations of Ce3+ ions. The grown crystals are 20-70 mm in length and 5-10 mm in diameter. Detailed sintering and crystal growth procedure is presented in this study. The required phase of the grown crystals is confirmed by powder X-ray diffraction (XRD) analysis. Ultraviolet (UV) photoluminescence and X-ray induced luminescence of the grown crystals at room temperature are measured. Various scintillation properties such as energy resolution, light yield, α/β ratio and fluorescence decay time under the excitation by 137Cs γ-ray and 241Am particles are also presented.

Czochralski and modified Bridgman-Stockbarger growth of pure, Cd 2+ and Nd 3+ doped benzil single crystals

NASA Astrophysics Data System (ADS)

Aggarwal, M. D.; Wang, W. S.; Tambwe, M.

1993-03-01

Pure, Cd2+ and Nd3+-doped benzil C6H5COCOC6H5 have been grown from melt using the Czochralski and modified Bridgman-Stockbarger methods. Angle-tuned second harmonic generation of pure benzil from Nd:YAG laser radiation of λ = 1.06 μm with a conversion efficiency η = I2w/Iw = 0.4% has been demonstrated. We have used a Nd:YAG pulse laser to measure the radiation damage threshold as 15.9 MW/cm2 (c-axis) and 23.9 MW/cm2 (a-axis) under the conditions that laser pulse width is 10 ns. Under the same conditions, the conversion efficiency of Nd3+ and Cd2+-doped benzil, η= I2w/Iw = 1.1%, has been demonstrated. The radiation threshold is higher than for pure benzil crystals.

Growth and laser properties of Yb : Ca 4YO(BO 3) 3 crystal

NASA Astrophysics Data System (ADS)

Zhang, Huaijin; Meng, Xianlin; Zhu, Li; Wang, Pu; Liu, Xuesong; Cheng, Ruiping; Dawes, Judith; Dekker, Peter; Zhang, Shaojun; Sun, Lianke

1999-04-01

Yb : Ca 4YO(BO 3) 3 (Yb : YCOB) crystal has been grown by the Czochralski method. The absorption and fluorescence spectra have been measured. The green luminescence is also observed. The output laser at 1032 nm has been demonstrated pumped by laser diode (LD) at 976.4 nm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhe, E-mail: zhenzhe1201@sina.com; Yang, Lei; Hang, Yin

Highly transparent Dy{sup 3+}-doped terbium gallium garnet (TGG) single crystal was grown by Czochralski (Cz) method. Phase composition of the crystal was tested by XRD measurements. The distribution coefficient of Dy{sup 3+} in the crystal was obtained. The optical and magneto-optical properties were analyzed in detail, and magnetic properties of the Dy{sup 3+}-TGG crystal were studied. The paramagnetic behavior is observed down to 10 K. The as-grown crystal exhibited high optical transmittance, particularly in the visible region. The Faraday rotation was investigated over visible and near-infrared regions (VIS–NIR) at room temperature. The Verdet constants increase at measured wavelengths and highmore » thermal stability was found in Dy{sup 3+}-doped TGG, as compared to the properties of pure TGG, indicating that Dy{sup 3+}-doped crystals are preferable for magneto-active materials used in Faraday devices at VIS–NIR wavelengths. - Graphical abstract: Highly transparent Dy{sup 3+}-doped terbium gallium garnet (TGG) and pure TGG single crystals were grown by Czochralski method. The Dy{sup 3+}-doped TGG possesses 20–30% higher Verdet values in reference to TGG independently on wavelength.« less

Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

NASA Astrophysics Data System (ADS)

Zhao, Wenhan; Liu, Lijun

2017-01-01

The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

Simulation of the temperature distribution in crystals grown by Czochralski method

NASA Technical Reports Server (NTRS)

Dudokovic, M. P.; Ramachandran, P. A.

1985-01-01

Production of perfect crystals, free of residual strain and dislocations and with prescribed dopant concentration, by the Czochralski method is possible only if the complex, interacting phenomena that affect crystal growth in a Cz-puller are fully understood and quantified. Natural and forced convection in the melt, thermocapillary effect and heat transfer in and around the crystal affect its growth rate, the shape of the crystal-melt interface and the temperature gradients in the crystal. The heat transfer problem in the crystal and between the crystal and all other surfaces present in the crystal pulling apparatus are discussed at length. A simulation and computer algorithm are used, based on the following assumptions: (1) only conduction occurs in the crystal (experimentally determined conductivity as a function of temperature is used), (2) melt temperature and the melt-crystal heat transfer coefficient are available (either as constant values or functions of radial position), (3) pseudo-steady state is achieved with respect to temperature gradients, (4) crystal radius is fixed, and (5) both direct and reflected radiation exchange occurs among all surfaces at various temperatures in the crystal puller enclosure.

Ca3La2(BO3)4 crystal: a new candidate host material for the ytterbium ion

NASA Astrophysics Data System (ADS)

Wang, Yeqing; You, Zhenyu; Zhu, Zhaojie; Xu, Jinlong; Li, Jianfu; Wang, Yan; Wang, Hongyan; Tu, Chaoyang

2013-10-01

A disordered laser crystal Yb3+-doped Ca3La2(BO3)4 crystal was grown by the Czochralski technique. The characterized room temperature polarized spectra, re-absorption possibility and laser performance showed that this crystal should be a promising gain material, not only suitable for diode pumping, but also a good candidate for the generation of tunable and short pulse lasers. End pumped by a diode laser at 976 nm in plano-concave and plano-plano cavity, a 3.65 W output power with a slope efficiency of 65% was achieved by using a c-cut Yb3+:Ca3La2(BO3)4 crystal. The output laser wavelength shifted from 1042 to 1062 nm.

Study of structural and optical properties of YAG and Nd:YAG single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostić, S.; Lazarević, Z.Ž., E-mail: lzorica@yahoo.com; Radojević, V.

2015-03-15

Highlights: • Transparent YAG and pale pink Nd:YAG single crystals were produced by the Czochralski technique. • Growth mechanisms and shape of the liquid/solid interface and incorporation of Nd{sup 3+} were studied. • The structure of the crystals was investigated by X-ray diffraction, Raman and IR spectroscopy. • The 15 Raman and 17 IR modes were observed. • The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. - Abstract: Yttrium aluminum garnet (YAG, Y{sub 3}Al{sub 5}O{sub 12}) and yttrium aluminum garnet doped with neodymium (Nd:YAG) single crystals were grown by the Czochralski technique. Themore » critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. As a result of our experiments, the transparent YAG and pale pink Nd:YAG single crystals were produced. The obtained crystals were studied by X-ray diffraction, Raman and IR spectroscopy. The crystal structure was confirmed by XRD. The 15 Raman and 17 IR modes were observed. The Raman and IR spectroscopy results are in accordance with X-ray diffraction analysis. The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. The absence of a core was confirmed by viewing polished crystal slices. Also, it is important to emphasize that the obtained Nd:YAG single crystal has a concentration of 0.8 wt.% Nd{sup 3+} that is characteristic for laser materials.« less

Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

NASA Technical Reports Server (NTRS)

1980-01-01

The design and development of an advanced Czochralski crystal grower are described. Several exhaust gas analysis system equipment specifications studied are discussed. Process control requirements were defined and design work began on the melt temperature, melt level, and continuous diameter control. Sensor development included assembly and testing of a bench prototype of a diameter scanner system.

Telescoping low vibration pulling mechanism for Czochralski crystal growth

NASA Astrophysics Data System (ADS)

Iseler, G. W.

1985-02-01

A telescoping low vibration pulling mechanism is described for use in Czochralski crystal growth apparatus, comprising a broached brushing which defines an internal circumference of teeth on the circumference of a splined shaft. The brushing is coupled to the means for rotation via a hollow tube and the splined shaft, couplable to a seed shaft, and an elevation means telescopes through said brushing within said hollow tube.

LSSA large area silicon sheet task continuous Czochralski process development

NASA Technical Reports Server (NTRS)

Rea, S. N.

1978-01-01

A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

Synchrotron X-ray topography of electronic materials.

PubMed

Tuomi, T

2002-05-01

Large-area transmission, transmission section, large-area back-reflection, back-reflection section and grazing-incidence topography are the geometries used when recording high-resolution X-ray diffraction images with synchrotron radiation from a bending magnet, a wiggler or an undulator of an electron or a positron storage ring. Defect contrast can be kinematical, dynamical or orientational even in the topographs recorded on the same film at the same time. In this review article limited to static topography experiments, examples of defect studies on electronic materials cover the range from voids and precipitates in almost perfect float-zone and Czochralski silicon, dislocations in gallium arsenide grown by the liquid-encapsulated Czochralski technique, the vapour-pressure controlled Czochralski technique and the vertical-gradient freeze technique, stacking faults and micropipes in silicon carbide to misfit dislocations in epitaxic heterostructures. It is shown how synchrotron X-ray topographs of epitaxic laterally overgrown gallium arsenide layer structures are successfully explained by orientational contrast.

Generation of (F+2)_AH Centres in Sodium Ion Doped KCl:CO^{2-3}

NASA Astrophysics Data System (ADS)

Diaf, M.; Chihi, I.; Hamaïdia, A.; Akrmi, El.

1996-01-01

We demonstrate that (F+2)AH centres of KCl may be obtained from crystals doped with K{2}CO{3} and NaCl, grown by the Czochralski method in open atmosphere. The optical properties of (F+2)AH centres thus produced are exactly the same as those of (F+2)AH centres prepared by the usual technique, which involves superoxide doping and a controlled atmosphere. Nous montrons que les centres (F+2)AH de KCl peuvent être obtenus à partir de cristaux dopés par K{2}CO{3} et NaCl, fabriqués par la méthode de Czochralski à l'air libre. Les propriétés optiques des centres (F+2)AH ainsi produits sont exactement les mêmes que celles des centres (F+2)AH préparés par la technique habituelle, qui comporte le dopage par un superoxyde et l'emploi d'une atmosphère contrôlée.

2 inch size Czochralski growth and scintillation properties of Li+ co-doped Ce:Gd3Ga3Al2O12

NASA Astrophysics Data System (ADS)

Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Yoshino, Masao; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshino, Masao; Yoshikawa, Akira

2017-03-01

The 2 inch size Li 0.15 and 1.35 mol% co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Li co-doping. Ce4+ CT absorption below 350 nm is clearly enhanced by Li co-doping as same as divalent ions co-doping. By 1.35 at.% Li co-doping, light yield was decrease to 88% of the Ce: GAGG standard and decay time was accelerated to 34.3ns 21.0%, 84.6ns 68.7%, 480ns 10.3%. The timing resolution measurement for a pair of 3 × 3 × 3mm3 size Li,Ce:GAGG scintillator crystals was performed using Si-PMs and the timing resolution of the 1.35 at.% Li co-doped Ce:GAGG was 218ps.

Progress in the Development of the Lead Tungstate Crystals for EM-Calorimetry in High-Energy Physics

NASA Astrophysics Data System (ADS)

Novotny, R. W.; Brinkmann, K.-T.; Borisevich, A.; Dormenev, V.; Houzvicka, J.; Korjik, M.; Zaunick, H.-G.

2017-11-01

Even at present time there is a strong interest and demand for high quality lead tungstate crystals (PbWO4, PWO) for electromagnetic (EM) calorimetry. PWO is implemented into the EM calorimeter of the CMS-ECAL detector at LHC [1] and required for the completion of the PANDA EMC [2] and various ongoing detector projects at Jefferson Lab. The successful mass production of PWO using the Czochralski method was stopped after bankruptcy of the Bogoroditsk Technical Chemical Plant (BTCP) in Russia as major producer so far. The Shanghai Institute of Ceramics, Chinese Academy of Science (China) was considered as an alternative producer using the modified Bridgman method. The company CRYTUR (Turnov, Czech Republic) with good experience in the development and production of different types of inorganic oxide crystals has restarted at the end of 2014 the development of lead tungstate for mass production based on the Czochralski method. An impressive progress was achieved since then. The growing technology was optimized to produce full size samples with the quality meeting the PANDA-EMC specifications for PWO-II. We will present a detailed progress report on the research program in collaboration with groups at Orsay and JLab. The full size crystals will be characterized with respect to optical performance, light yield, kinetics and radiation hardness.

A first-principle model of 300 mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate

NASA Astrophysics Data System (ADS)

Zheng, Zhongchao; Seto, Tatsuru; Kim, Sanghong; Kano, Manabu; Fujiwara, Toshiyuki; Mizuta, Masahiko; Hasebe, Shinji

2018-06-01

The Czochralski (CZ) process is the dominant method for manufacturing large cylindrical single-crystal ingots for the electronics industry. Although many models and control methods for the CZ process have been proposed, they were only tested with small equipment and only a few industrial application were reported. In this research, we constructed a first-principle model for controlling industrial CZ processes that produce 300 mm single-crystal silicon ingots. The developed model, which consists of energy, mass balance, hydrodynamic, and geometrical equations, calculates the crystal radius and the crystal growth rate as output variables by using the heater input, the crystal pulling rate, and the crucible rise rate as input variables. To improve accuracy, we modeled the CZ process by considering factors such as changes in the positions of the crucible and the melt level. The model was validated with the operation data from an industrial 300 mm CZ process. We compared the calculated and actual values of the crystal radius and the crystal growth rate, and the results demonstrated that the developed model simulated the industrial process with high accuracy.

Digital Control of the Czochralski Growth of Gallium Arsenide-Controller Software Reference Manual

DTIC Science & Technology

1987-07-15

possible with regard to the format of the commands. Several help menus and extensive command prompts guide the operator. The dialog between the...single-zone heater is in use.) - 4 - Kfc ^&S^^ p IS’ K: i 1. Digital Control of Czochralski GaAs Crystal Growth (2) Four tachometers which are...commands for the display of menus or auxiliary information. The scrolled portion shrinks to four lines if auxiliary data display is re- quested with the

Oxygen-induced recombination centers in as-grown Czochralski silicon crystals

NASA Technical Reports Server (NTRS)

Nauka, K.; Gatos, H. C.; Lagowski, J.

1983-01-01

Simultaneous quantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime are obtained in Czochralski-grown Si crystals employing double laser absorption scanning. It is found that oxygen concentration maxima and minima along the crystal growth direction coincide with lifetime minima and maxima, respectively. Another finding is that the magnitude of oxygen-induced lifetime changes increases dramatically in going from the center to the periphery of the crystal. The findings discussed imply that 'as-grown' oxygen precipitates figure in lifetime-limiting processes.

Shallow melt apparatus for semicontinuous czochralski crystal growth

DOEpatents

Wang, Tihu; Ciszek, Theodore F.

2006-01-10

In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Numerical simulation of convection and heat transfer in Czochralski crystal growth by multiple-relaxation-time LBM

NASA Astrophysics Data System (ADS)

Liu, Ding; Huang, Weichao; Zhang, Ni

2017-07-01

A two-dimensional axisymmetric swirling model based on the lattice Boltzmann method (LBM) in a pseudo Cartesian coordinate system is posited to simulate Czochralski (Cz) crystal growth in this paper. Specifically, the multiple-relaxation-time LBM (MRT-LBM) combined with the finite difference method (FDM) is used to analyze the melt convection and heat transfer in the process of Cz crystal growth. An incompressible axisymmetric swirling MRT-LB D2Q9 model is applied to solve for the axial and radial velocities by inserting thermal buoyancy and rotational inertial force into the two-dimensional lattice Boltzmann equation. In addition, the melt temperature and the azimuthal velocity are solved by MRT-LB D2Q5 models, and the crystal temperature is solved by FDM. The comparison results of stream functions values of different methods demonstrate that our hybrid model can be used to simulate the fluid-thermal coupling in the axisymmetric swirling model correctly and effectively. Furthermore, numerical simulations of melt convection and heat transfer are conducted under the conditions of high Grashof (Gr) numbers, within the range of 105 ˜ 107, and different high Reynolds (Re) numbers. The experimental results show our hybrid model can obtain the exact solution of complex crystal-growth models and analyze the fluid-thermal coupling effectively under the combined action of natural convection and forced convection.

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

NASA Technical Reports Server (NTRS)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Optical properties and refractive indices of Gd3Al2Ga3O12:Ce3+ crystals

NASA Astrophysics Data System (ADS)

Kozlova, N. S.; Busanov, O. A.; Zabelina, E. V.; Kozlova, A. P.; Kasimova, V. M.

2016-05-01

Crystals of cerium-doped gadolinium-gallium-aluminum garnet have been grown by the Czochralski method. The transmission and reflection spectra of these crystals in the wavelength range of 250-800 nm have been obtained by optical spectroscopy. Refractive indices are calculated based on the measured Brewster angles, the experimental results are approximated using the Cauchy equation, and a dispersion dependence is obtained.

Continuous Czochralski growth: Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array project

NASA Technical Reports Server (NTRS)

1978-01-01

The primary objective of this contract is to develop equipment and methods for the economic production of single crystal ingot material by the continuous Czochralski (CZ) process. Continuous CZ is defined for the purpose of this work as the growth of at least 100 kilograms of ingot from only one melt container. During the reporting period (October, 1977 - September, 1978), a modified grower was made fully functional and several recharge runs were performed. The largest run lasted 44 hours and over 42 kg of ingot was produced. Little, if any, degradation in efficiency was observed as a result of pulling multiple crystals from one crucible. Solar efficiencies observed were between 9.3 and 10.4% AMO (13.0 and 14.6% AMI) compared to 10.5% (14.7% AMI) for optimum CZ material control samples. Using the SAMICS/IPEG format, economic analysis of continuous CZ suggests that 1986 DoE cost goals can only be met by the growth of large diameter, large mass crystals.

Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace

NASA Technical Reports Server (NTRS)

Fiegl, George (Inventor); Torbet, Walter (Inventor)

1981-01-01

A replenishment crucible is mounted adjacent the usual drawing crucible, from which a monocrystalline boule is drawn according to the Czochralski method. A siphon tube for molten semiconductor transfer extends from the replenishment crucible to the drawing crucible. Each crucible is enclosed within its own hermetic shell and is provided with its own heater. The siphon tube is initially filled with molten semiconductor by raising the inert atmospheric pressure in the shell surrounding the replenishment crucible above that surrounding the drawing crucible. Thereafter, adjustment of the level of molten semiconductor in the drawing crucible may be achieved by adjusting the level in either crucible, since the siphon tube will establish the same level in both crucibles. For continuous processing, solid semiconductor may be added to and melted in the replenishment crucible during the process of drawing crystals from the drawing crucible. A constant liquid level of melted semiconductor is maintained in the system by an optical monitoring device and any of several electromechanical controls of the rate of replenishment or crucible height.

Numerical modeling of Czochralski growth of Li2MoO4 crystals for heat-scintillation cryogenic bolometers

NASA Astrophysics Data System (ADS)

Stelian, Carmen; Velázquez, Matias; Veber, Philippe; Ahmine, Abdelmounaim; Sand, Jean-Baptiste; Buşe, Gabriel; Cabane, Hugues; Duffar, Thierry

2018-06-01

Lithium molybdate Li2MoO4 (LMO) crystals of mass ranging between 350 and 500 g are excellent candidates to build heat-scintillation cryogenic bolometers likely to be used for the detection of rare events in astroparticle physics. In this work, numerical modeling is applied in order to investigate the Czochralski growth of Li2MoO4 crystals in an inductive furnace. The numerical model was validated by comparing the numerical predictions of the crystal-melt interface shape to experimental visualization of the growth interface. Modeling was performed for two different Czochralski furnaces that use inductive heating. The simulation of the first furnace, which was used to grow Li2MoO4 crystals of 3-4 cm in diameter, reveals non-optimal heat transfer conditions for obtaining good quality crystals. The second furnace, which will be used to grow crystals of 5 cm in diameter, was numerically optimized in order to reduce the temperature gradients in the crystal and to avoid fast crystallization of the bath at the later stages of the growth process.

Silicon crystal growth in vacuum

NASA Technical Reports Server (NTRS)

Khattak, C. P.; Schmid, F.

1982-01-01

The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

Paramagnetic resonance of LaGaO3: Mn single crystals grown by floating zone melting

NASA Astrophysics Data System (ADS)

Vazhenin, V. A.; Potapov, A. P.; Artyomov, M. Yu.; Salosin, M. A.; Fokin, A. V.; Gil'mutdinov, I. F.; Mukhamedshin, I. R.

2016-02-01

The EPR spectrum of Mn-doped lanthanum gallate single crystals grown by floating zone melting with optical heating has been studied. In contrast to the crystals grown according to the Czochralski method, no manganese is found in these crystals even after high-temperature annealing in air. The spectral characteristics of Fe3+ and Gd3+ centers in crystals prepared by various methods have been compared in the rhombohedral phase, and the fourth-rank nondiagonal parameters of the Fe3+ trigonal centers have been determined, as well.

On the scaling analysis of the solute boundary layer in idealized growth configurations

NASA Astrophysics Data System (ADS)

Garandet, J. P.; Duffar, T.; Favier, J. J.

1990-11-01

A scaling procedure is applied to the equation governing chemical transport in idealized Czochralski and horizontal Bridgman growth experiments. Our purpose is to get a fair estimate of the solute boundary layer in front of the solidification interface. The results are very good in the Czochralski type configuration, the maximum error with respect to the semi-analytical solution of Burton, Prim and Schlichter being of the order of 20%. In the Bridgman type configuration, our predictions compare well with the values of the numerical simulations; however, more data would be needed for a definite conclusion to be drawn.

LEC GaAs for integrated circuit applications

NASA Technical Reports Server (NTRS)

Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

1984-01-01

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Numerical study on the effect of temperature oscillations on the crystallization front shape during Czochralski growth of gadolinium gallium garnet crystal

NASA Astrophysics Data System (ADS)

Faiez, Reza; Rezaei, Yazdan

2017-10-01

Time-dependent, finite volume method calculations of momentum and heat transfer were carried out to investigate the correlation between oscillatory convection and the crystallization front dynamics during the Czochralski (Cz) growth of an oxide material. The present modeling allows us to illustrate the modification of the interface shape during the time period of oscillation of the flow manifesting as the formation of a cold plume beneath the phase boundary. It was shown that the instability mechanism is associated with an irreversible dramatic change in the interface shape, which occurs at a critical Reynolds number significantly lower than that is predicted by the quasi-stationary global model analysis of the Cz growth system. The baroclinic term which appears in the vorticity equation in a rotating stratified fluid is used to describe the numerical results of the model. The properties of the thermal waves were studied in the monitoring points located nearby the interface. The waves are regular but not in fact vertically correlated as observed in the case of baroclinic waves. The Rayleigh-Benard dynamics is suggested to be the predominant mechanism even though the instability is primarily baroclinic.

Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT

NASA Astrophysics Data System (ADS)

Kirpo, Maksims

2013-05-01

Silicon crystals for high efficiency solar cells are produced mainly by the Czochralski (CZ) crystal growth method. Computer simulations of the CZ process established themselves as a basic tool for optimization of the growth process which allows to reduce production costs keeping high quality of the crystalline material. The author shows the application of the general Computational Fluid Dynamics (CFD) code ANSYS FLUENT to solution of the static two-dimensional (2D) axisymmetric global model of the small industrial furnace for growing of silicon crystals with a diameter of 100 mm. The presented numerical model is self-sufficient and incorporates the most important physical phenomena of the CZ growth process including latent heat generation during crystallization, crystal-melt interface deflection, turbulent heat and mass transport, oxygen transport, etc. The demonstrated approach allows to find the heater power for the specified pulling rate of the crystal but the obtained power values are smaller than those found in the literature for the studied furnace. However, the described approach is successfully verified with the respect to the heater power by its application for the numerical simulations of the real CZ pullers by "Bosch Solar Energy AG".

Solar silicon via the Dow Corning process

NASA Technical Reports Server (NTRS)

Hunt, L. P.; Dosaj, V. D.

1979-01-01

Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

Properties of high quality GaP single crystals grown by computer controlled liquid encapsulated Czochralski technique

NASA Astrophysics Data System (ADS)

Kokubun, Y.; Washizuka, S.; Ushizawa, J.; Watanabe, M.; Fukuda, T.

1982-11-01

The properties of GaP single crystals grown by an automatically diameter controlled liquid encapsulated Czochralski technique using a computer have been studied. A dislocation density less than 5×104 cm-2 has been observed for crystal grown in a temperature gradient lower than 70 °C/cm near the solid-liquid interface. Crystals have about 10% higher electron mobility than that of commercially available coracle controlled crystals and have 0.2˜0.5 compensation ratios. Yellow light emitting diodes using computer controlled (100) substrates have shown extremely high external quantum efficiency of 0.3%.

New electron trap in p-type Czochralski silicon

NASA Technical Reports Server (NTRS)

Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

1984-01-01

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Scintillation properties of Pr-activated LuAlO 3

NASA Astrophysics Data System (ADS)

Drozdowski, Winicjusz; Wojtowicz, Andrzej J.; Wiśniewski, Dariusz; Łukasiewicz, Tadeusz; Kisielewski, Jarosław

2006-01-01

Praseodymium activated LuAlO 3 (LuAP) crystals have been grown using the Czochralski method at ITME, Warsaw. In this communication the measurements of radioluminescence (RL), low temperature thermoluminescence (TL), room temperature afterglow (AG), scintillation light yields (LY), and scintillation time profiles (STP), performed on polished 2 × 2 × 10 mm pixels with three Pr concentrations (0.003, 0.04, and 0.08 at.%), are reported. Two sets of samples are compared: (i) "as grown", and (ii) annealed in H 2 atmosphere.

Solar technology assessment project. Volume 6: Photovoltaic technology assessment

NASA Astrophysics Data System (ADS)

Backus, C. E.

1981-04-01

Industrial production of photovoltaic systems and volume of sales are reviewed. Low cost silicon production techniques are reviewed, including the Czochralski process, heat exchange method, edge defined film fed growth, dentritic web growth, and silicon on ceramic process. Semicrystalline silicon, amorphous silicon, and low cost poly-silicon are discussed as well as advanced materials and concentrator systems. Balance of system components beyond those needed to manufacture the solar panels are included. Nontechnical factors are assessed. The 1986 system cost goals are briefly reviewed.

Microhardness of carbon-doped (111) p-type Czochralski silicon

NASA Technical Reports Server (NTRS)

Danyluk, S.; Lim, D. S.; Kalejs, J.

1985-01-01

The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohno, Yutaka, E-mail: yutakaohno@imr.tohoku.ac.jp; Inoue, Kaihei; Fujiwara, Kozo

2015-06-22

Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.

Kinetics of thermal donor generation in silicon

NASA Technical Reports Server (NTRS)

Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

1984-01-01

The generation kinetics of thermal donors at 450 C in Czochralski-grown silicon was found to be altered by high-temperature preannealing (e.g., 1100 C for 30 min). Thus, when compared with as-grown Si, high-temperature preannealed material exhibits a smaller concentration of generated thermal donors and a faster thermal donor saturation. A unified mechanism of nucleation and oxygen diffusion-controlled growth (based on solid-state plate transformation theory) is proposed to account for generation kinetics of thermal donors at 450 C, in as-grown and high-temperature preannealed Czochralski silicon crystals. This mechanism is consistent with the main features of the models which have been proposed to explain the formation of oxygen thermal donors in silicon.

Development and melt growth of novel scintillating halide crystals

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Yokota, Yuui; Shoji, Yasuhiro; Kral, Robert; Kamada, Kei; Kurosawa, Shunsuke; Ohashi, Yuji; Arakawa, Mototaka; Chani, Valery I.; Kochurikhin, Vladimir V.; Yamaji, Akihiro; Andrey, Medvedev; Nikl, Martin

2017-12-01

Melt growth of scintillating halide crystals is reviewed. The vertical Bridgman growth technique is still considered as very popular method that enables production of relatively large and commercially attractive crystals. On the other hand, the micro-pulling-down method is preferable when fabrication of small samples, sufficient for preliminary characterization of their optical and/or scintillation performance, is required. Moreover, bulk crystal growth is also available using the micro-pulling-down furnace. The examples of growths of various halide crystals by industrially friendly melt growth techniques including Czochralski and edge-defined film-fed growth methods are also discussed. Finally, traveling molten zone growth that in some degree corresponds to horizontal zone melting is briefly overviewed.

Analysis of Phase Separation in Czochralski Grown Single Crystal Ilmenite

NASA Technical Reports Server (NTRS)

Wilkins, R.; Powell, Kirk St. A.; Loregnard, Kieron R.; Lin, Sy-Chyi; Muthusami, Jayakumar; Zhou, Feng; Pandey, R. K.; Brown, Geoff; Hawley, M. E.

1998-01-01

Ilmenite (FeTiOs) is a wide bandgap semiconductor with an energy gap of 2.58 eV. Ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Single crystal ilmenite has been grown from the melt using the Czochralski method. Growth conditions have a profound effect on the microstructure of the samples. Here we present data from a variety of analytical techniques which indicate that some grown crystals exhibit distinct phase separation during growth. This phase separation is apparent for both post-growth annealed and unannealed samples. Under optical microscopy, there appear two distinct areas forming a matrix with an array of dots on order of 5 pm diameter. While appearing bright in the optical micrograph, atomic force microscope (AFM) shows the dots to be shallow pits on the surface. Magnetic force microscope (MFM) shows the dots to be magnetic. Phase identification via electron microprobe analysis (EMPA) indicates two major phases in the unannealed samples and four in the annealed samples, where the dots appear to be almost pure iron. This is consistent with micrographs taken with a scanning probe microscope used in the magnetic force mode. Samples that do not exhibit the phase separation have little or no discernible magnetic structure detectable by the MFM.

BaY2F8 doped with Er3+: An upconverter material for photovoltaic application

NASA Astrophysics Data System (ADS)

Boccolini, A.; Faoro, R.; Favilla, E.; Veronesi, S.; Tonelli, M.

2013-08-01

Fluoride crystals (BaY2F8) doped with Er3+ ions with different doping level have been grown with a home-made Czochralski furnace. A spectroscopic characterization consisting in both absorption and fluorescence measurements were performed in order to investigate the upconversion mechanism occurring when the material is excited with a radiation at 1557 nm. The measured emission spectrum shows a photoluminescence mainly distributed in the Near Infrared (NIR) region at ≃1 μm. The spectral conversion due to the upconversion makes this material suitable for photovoltaic applications, especially if we combine it with a crystalline silicon solar cell. A device made of single face solar cell+upconverter material (PV-UC) was designed and his external quantum efficiency (EQE) at 1557 nm was measured. EQE values of 6.5% and 4.1% were reached under 8.5 W cm-2 power density illumination for the 30%Er3+ and 20%Er3+ samples, respectively.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

NASA Astrophysics Data System (ADS)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

Radiation damage in lithium-counterdoped N/P silicon solar cells

NASA Technical Reports Server (NTRS)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Dynamic global model of oxide Czochralski process with weighing control

NASA Astrophysics Data System (ADS)

Mamedov, V. M.; Vasiliev, M. G.; Yuferev, V. S.

2011-03-01

A dynamic model of oxide Czochralski growth with weighing control has been developed for the first time. A time-dependent approach is used for the calculation of temperature fields in different parts of a crystallization set-up and convection patterns in a melt, while internal radiation in crystal is considered in a quasi-steady approximation. A special algorithm is developed for the calculation of displacement of a triple point and simulation of a crystal surface formation. To calculate variations in the heat generation, a model of weighing control with a commonly used PID regulator is applied. As an example, simulation of the growth process of gallium-gadolinium garnet (GGG) crystals starting from the stage of seeding is performed.

Spectral and multi-wavelength continuous-wave laser properties of Yb3+:BaLaGa3O7

NASA Astrophysics Data System (ADS)

Gao, Shufang; Xu, Shan

2018-05-01

Yb3+ doped BaLaGa3O7 crystal has been successfully grown by Czochralski method. The polarized absorption spectra, the fluorescence spectra and the fluorescence decay lifetime of Yb3+:BaLaGa3O7 crystal were measured at room temperature. The spectroscopic parameters of Yb3+:BaLaGa3O7 crystal are calculated. A continuous wave output power of 1.32W was obtained with four-wavelength emission corresponding to an optical-optical slope efficiency of 55%.

Purification of organic nonlinear optical materials for bulk crystal growth from melt

NASA Astrophysics Data System (ADS)

Gebre, Tesfaye; Bhat, Kamala N.; Batra, Ashok K.; Lal, Ravindra B.; Aggarwal, Mohan D.; Penn, Benjamin G.; Frazier, Donald O.

2002-10-01

The techniques developed for purification of nonlinear optical organic materials, such as benzil, 2-methyl-4-nitroaniline (MNA), Dicyanovinyl anisole (DIVA) and its derivatives, nitrophenyl prolinol (NPP) and other Schiff's base compounds, include Kugelrohy method, physical vapor transport, zone refining and recrystallization from the solvent are described. Purity of the materials is tested using differential thermal analysis, gas chromatograph/Mass detector, Fourier Transform Infrared spectroscopy and melting point measurements. The purified materials were later used in the growth of single crystal by Bridgman-Stockbarger and Czochralski techniques.

Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Wolfson, R. G.; Sibley, C. B.

1978-01-01

The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

Optical and scintillation properties of ce-doped (Gd2Y1)Ga2.7Al2.3O12 single crystal grown by Czochralski method

NASA Astrophysics Data System (ADS)

Wang, Chao; Wu, Yuntao; Ding, Dongzhou; Li, Huanying; Chen, Xiaofeng; Shi, Jian; Ren, Guohao

2016-06-01

Multicomponent garnets, due to their excellent light yield and energy resolution, become one of the most promising scintillators used for homeland security and nuclear non-proliferation applications. This work focuses on the optimization of Ce-doped (Gd,Y)3(Ga,Al)5O12 scintillators using a combination strategy of pre-screening and scale-up. Ce-doped GdxY1-xGayAl5-yO12 (x=1, 2 and y=2, 2.2, 2.5, 2.7, 3) polycrystalline powders were prepared by high-temperature solid state reaction method. The desired garnet phase in all the samples was confirmed using X-ray diffraction measurement. By comparing the radioluminescence intensity, the highest scintillation efficiency was achieved at a component of Gd2Y1Ga2.7Al2.3O12:Ce powders. A (Gd2Y1)Ga2.7Al2.3O12 doped with 1% Ce single crystal with dimensions of Ø35×40 mm was grown by Czochralski method using a <111> oriented seed. Luminescence and scintillation properties were measured. An optical transmittance of 84% was achieved in the concerned wavelength from 500 to 800 nm. Its 5d-4f emission of Ce3+ is at 530 nm. The light yield of a Ce1%: Gd2Y1Ga2.7Al2.3O12 single crystal slab at a size of 5×5×1 mm3 can reach about 65,000±3000 Ph/MeV along with two decay components of 94 and 615 ns under 137Cs source irradiation.

Characterization of Yb{sup 3+}:Sr{sub 5{minus}x}Ba{sub x}(PO{sub 4}){sub 3}F crystals for diode pumped lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayramian, A.J.; Marshall, C.D.; Schaffers, K.I.

Ytterbium-doped Sr{sub 5}(PO{sub 4}){sub 3}F (S-FAP) has been shown to be a useful material for diode pumping, since it displays high gain, low loss, and a long radiative lifetime. One of the issues with S-FAP is that it has a relatively narrow absorption bandwidth ({approximately}5 nm) at 900 nm, the diode-pumping wavelength, while the diode`s output bandwidth can be large ({approximately}10 nm). By changing the host slightly, the absorption feature can be broadened to better match the pump bandwidth. Four mixed crystal boules of Yb{sup 3+}:Sr{sub 5{minus}x}Ba{sub x}(PO{sub 4}){sub 3}F were grown by the Czochralski method with x = 0.25,more » 0.5, 1, and 2. The bandwidth of the 900-nm absorption feature was found to grow with increasing barium concentration from 4.7 nm to a maximum of 15.9 nm. Emission spectra showed a similar bandwidth increase with barium content from 4.9 nm to a maximum of 10 nm. Emission cross sections for these materials were deduced by the methods of reciprocity, the Einstein method, and small-signal gain. The absorption feature`s homogeneity was probed using a tunable pump source which qualitatively showed that the barium-broadened lines were at least partly inhomogeneous. Each of these materials lased with a variety of output couplers. This family of materials was found to provide suitable laser hosts where a broader absorption and/or emission bandwidth is desired.« less

Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

NASA Astrophysics Data System (ADS)

Ostapenko, S.; Tarasov, I.

2000-04-01

A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

Modeling Czochralski growth of oxide crystals for piezoelectric and optical applications

NASA Astrophysics Data System (ADS)

Stelian, C.; Duffar, T.

2018-05-01

Numerical modeling is applied to investigate the impact of crystal and crucible rotation on the flow pattern and crystal-melt interface shape in Czochralski growth of oxide semi-transparent crystals used for piezoelectric and optical applications. Two cases are simulated in the present work: the growth of piezoelectric langatate (LGT) crystals of 3 cm in diameter in an inductive furnace, and the growth of sapphire crystals of 10 cm in diameter in a resistive configuration. The numerical results indicate that the interface shape depends essentially on the internal radiative heat exchanges in the semi-transparent crystals. Computations performed by applying crystal/crucible rotation show that the interface can be flattened during LGT growth, while flat-interface growth of large diameter sapphire crystals may not be possible.

In Situ Determination of Thermal Profiles during Czochralski Silicon Crystal Growth by an Eddy Current Technique.

NASA Astrophysics Data System (ADS)

Choe, Kwang Su.

An eddy current testing method was developed to continuously monitor crystal growth process and determine thermal profiles in situ during Czochralski silicon crystal growth. The work was motivated by the need to improve the quality of the crystal by controlling thermal gradients and annealing history over the growth cycle. The experimental concept is to monitor intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. The experiments were performed in a resistance-heated Czochralski puller with a 203 mm (8 inch) diameter crucible containing 6.5 kg melt. The silicon crystals being grown were about 80 mm in diameter and monitored by an encircling sensor operating at three different test frequencies (86, 53 and 19 kHz). A one-dimensional analytical solution was employed to translate the detected signals into electrical conductivities. In terms of experiments, the effects of changes in growth condition, which is defined by crystal and crucible rotation rates, crucible position, pull rate, and hot-zone configuration, were investigated. Under a given steady-state condition, the thermal profile was usually stable over the entire length of crystal growth. The profile shifted significantly, however, when the crucible rotation rate was kept too high. As a direct evidence to the effects of melt flow on heat transfer process, a thermal gradient minimum was observed about the crystal/crucible rotation combination of 20/-10 rpm cw. The thermal gradient reduction was still most pronounced when the pull rate or the radiant heat loss to the environment was decreased: a nearly flat axial thermal gradient was achieved when either the pull rate was halved or the height of the exposed crucible wall was effectively doubled. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5 ^{rm o}C/mm. Regardless of growth condition, the three-frequency data revealed radial thermal gradients much larger than what were predicted by existing theoretical models. This discrepancy seems to indicate that optical effects, which are neglected in theoretical modeling, play a major role in the internal heat transfer of the crystal.

Czochralski growth of 2 in. Ca3Ta(Ga,Al)3Si2O14 single crystals for piezoelectric applications

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Shoji, Yasuhiro; Ohashi, Yuji; Yokota, Yuui; Chani, Valery I.; Kitahara, Masanori; Kudo, Tetsuo; Kamada, Kei; Kurosawa, Shunsuke; Medvedev, Andrey; Kochurikhin, Vladimir

2016-10-01

Growth of 2-in. diameter Al-substituted Ca3TaGa3Si2O14 crystals by Czochralski method is reported. The crystals were grown from the melt of Ca3TaGa1.5Al1.5Si2O14 composition and had langasite structure. No inclusions of secondary phases were detected in these crystals. The Ca3Ta(Ga,Al)3Si2O14 mixed crystals produced using non-substituted Ca3TaGa3Si2O14 seeds were defective. They had cracks and/or poly-crystalline structure. However, those grown on the seed of approximately Ca3TaGa1.5Al1.5Si2O14 composition were defect-free. Phase diagram of the Ca3TaGa3Si2O14-Ca3TaAl3Si2O14 pseudo-binary system and segregation phenomenon are discussed in some details. Homogeneity of the crystals was evaluated by measuring 2D-mapping of leaky surface acoustic wave (LSAW) velocities for Y-cut Ca3TaGa1.5Al1.5Si2O14 substrate. Although some inhomogeneities were observed due to slight variations in chemical composition, the crystal had acceptable homogeneity for applications in acoustic wave devices exhibiting the LSAW velocity variation within ±0.048%.

Research on growth and defects of 5 in. YCOB single crystal

NASA Astrophysics Data System (ADS)

Tu, Xiaoniu; Wang, Sheng; Xiong, Kainan; Zheng, Yanqing; Shi, Erwei

2018-04-01

YCa4O(BO3)3 (YCOB) is an important nonlinear optical crystal, which is a key optical element in the SHG and OPCPA process to obtain high repetition rate, multi-petawatt laser pulse. In this work, we have grown 5 in. YCOB crystals by Czochralski method and investigated phase separation, defects, as well as their formation mechanism. Laser induced damage threshold (LiDT), rocking curve and transmission spectrum is characterized using the sample without defects. It is believed that, based on this work, large-sized YCOB crystal without defects will be obtained in the near future.

Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

DOEpatents

Wang, T.; Ciszek, T. F.

2006-01-10

In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

Noncontact Measurement of Doping Profile for Bare Silicon

NASA Astrophysics Data System (ADS)

Kohno, Motohiro; Matsubara, Hideaki; Okada, Hiroshi; Hirae, Sadao; Sakai, Takamasa

1998-10-01

In this study, we evaluate the doping concentrations of bare silicon wafers by noncontact capacitance voltage (C V) measurements. The metal-air-insulator-semiconductor (MAIS) method enables the measurement of C V characteristics of silicon wafers without oxidation and electrode preparation. This method has the advantage that a doping profile close to the wafer surface can be obtained. In our experiment, epitaxial silicon wafers were used to compare the MAIS method with the conventional MIS method. The experimental results obtained from the two methods showed good agreement. Then, doping profiles of boron-doped Czochralski (CZ) wafers were measured by the MAIS method. The result indicated a significant reduction of the doping concentration near the wafer surface. This observation is attributed to the well-known deactivation of boron with atomic hydrogen which permeated the silicon bulk during the polishing process. This deactivation was recovered by annealing in air at 180°C for 120 min.

Characterizing Surfaces of the Wide Bandgap Semiconductor Ilmenite with Scanning Probe Microcopies

NASA Technical Reports Server (NTRS)

Wilkins, R.; Powell, Kirk St. A.

1997-01-01

Ilmenite (FeTiO3) is a wide bandgap semiconductor with an energy gap of about 2.5eV. Initial radiation studies indicate that ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Two scanning probe microscopy methods have been used to characterize the surface of samples taken from Czochralski grown single crystals. The two methods, atomic force microscopy (AFM) and scanning tunneling microscopy (STM), are based on different physical principles and therefore provide different information about the samples. AFM provides a direct, three-dimensional image of the surface of the samples, while STM give a convolution of topographic and electronic properties of the surface. We will discuss the differences between the methods and present preliminary data of each method for ilmenite samples.

Electronic structure of α-SrB4O7: experiment and theory

NASA Astrophysics Data System (ADS)

Atuchin, V. V.; Kesler, V. G.; Zaitsev, A. I.; Molokeev, M. S.; Aleksandrovsky, A. S.; Kuzubov, A. A.; Ignatova, N. Y.

2013-02-01

The investigation of valence band structure and electronic parameters of constituent element core levels of α-SrB4O7 has been carried out with x-ray photoemission spectroscopy. Optical-quality crystal α-SrB4O7 has been grown by the Czochralski method. Detailed photoemission spectra of the element core levels have been recorded from the powder sample under excitation by nonmonochromatic Al Kα radiation (1486.6 eV). The band structure of α-SrB4O7 has been calculated by ab initio methods and compared to XPS measurements. It has been found that the band structure of α-SrB4O7 is weakly dependent on the Sr-related states.

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

NASA Astrophysics Data System (ADS)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

Physical modelling of Czochralski crystal growth in horizontal magnetic field

NASA Astrophysics Data System (ADS)

Grants, Ilmārs; Pal, Josef; Gerbeth, Gunter

2017-07-01

This study addresses experimentally the heat transfer, the temperature azimuthal non-uniformity and the onset of oscillations in a low temperature physical model of a medium-sized Czochralski crystal growth process with a strong horizontal magnetic field (HMF). It is observed that under certain conditions the integral heat flux may decrease with increasing magnetic field strength at the same time as the flow velocity increases. The azimuthal non-uniformity of the temperature field in the melt near the crystal model rim is only little influenced by its rotation rate outside of a narrow range where the centrifugal force balances the buoyant one. The flow oscillation onset has been observed for two values of the HMF strength. Conditions of this onset are little influenced by the crystal rotation. The critical temperature difference of the oscillation onset considerably exceeds that of the Rayleigh-Bénard (RB) cell in a strong HMF.

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

NASA Technical Reports Server (NTRS)

Yoo, H. I.; Iles, P. A.; Tanner, D. P.

1979-01-01

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Impact of Carbon Codoping on Generation and Dissociation of Boron-Oxygen Defects in Czochralski Silicon

NASA Astrophysics Data System (ADS)

Xie, Meng; Yu, Xuegong; Wu, Yichao; Yang, Deren

2018-06-01

It has been previously reported that boron-oxygen (B-O) defects in Czochralski (CZ) silicon can be effectively suppressed by carbon codoping. In this work, the kinetics of B-O defect generation and dissociation in carbon-codoped CZ (CCZ) silicon has been investigated. It was found that the activation energy for B-O defect generation in CCZ silicon is 0.56 eV, much larger than that in conventional CZ silicon. However, the activation energy for B-O defect dissociation in CCZ silicon is almost the same as that in conventional CZ silicon, viz. ˜ 1.37 eV. Moreover, the binding energy of B-O defects in both CZ and CCZ silicon is determined to be 0.93 eV. Based on these results, it is believed that carbon atoms in CCZ silicon participate in formation of B-O latent centers before transforming into recombination-active centers under illumination.

Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

NASA Astrophysics Data System (ADS)

Schmidt, Jan; Cuevas, Andrés

1999-09-01

In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1-31 Ω cm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance method, allowing carrier lifetime measurements over a very broad injection range between 1012 and 1017cm-3. To eliminate all recombination channels not related to the degradation effect, the difference of the inverse lifetimes measured after and before light degradation is evaluated. A detailed analysis of the injection level dependence of the carrier lifetime change using the Shockley-Read-Hall theory shows that the fundamental recombination center created during illumination has an energy level between Ev+0.35 and Ec-0.45 eV and an electron/hole capture time constant ratio between 0.1 and 0.2. This deep-level center is observed in all samples and is attributed to a new type of boron-oxygen complex. Besides this fundamental defect, in some samples an additional shallow-level recombination center at 0.15 eV below Ec or above Ev is found to be activated during light exposure. This second center dominates the light-degraded carrier lifetime only under high-injection conditions and is hence only of minor importance for low-injection operated devices.

Thermal, spectroscopic properties and laser performance at 1.06 and 1.33 μm of Nd : Ca 4YO(BO 3) 3 and Nd : Ca 4GdO(BO 3) 3 crystals

NASA Astrophysics Data System (ADS)

Wang, Changqing; Zhang, Huaijin; Meng, Xianlin; Zhu, Li; Chow, Y. T.; Liu, Xuesong; Cheng, Ruiping; Yang, Zhaohe; Zhang, Shaojun; Sun, Lianke

2000-11-01

Nd : Ca 4YO(BO 3) 3 (Nd : YCOB) and Nd : Ca 4GdO(BO 3) 3 (Nd : GdCOB) crystals were grown by Czochralski method. Thermal expansion and specific heat of these two crystals were experimentally determined. Their fluorescence spectra were measured within the range from 1000 to 1500 nm. Laser output experiments at 1.06 and 1.33 μm of Nd : YCOB and Nd : GdCOB crystals were performed with a cw Ti : sapphire laser as the pump source.

Correlation between impurity distribution and location of ferroelectric domain walls in Nd : Mg : LiNbO 3 single crystal

NASA Astrophysics Data System (ADS)

Naumova, I. I.; Evlanova, N. F.; Blokhin, S. A.; Lavrishchev, S. V.

1998-04-01

Using selective chemical etching, scanning electron microscope (SEM) and wave dispersive X-ray (WDX) microanalysis we showed that the ferroelectric domain walls coincide with the maxima and minima Nd-impurity modulation in a periodically poled Nd : Mg : LiNbO 3 crystal grown by the Czochralski method along the normal to the (0 1 1¯ 2) face. Asymmetric form of the Nd-modulation produces nonequal positive and negative domains for one period. Variations of instantaneous rate of growth were estimated for facet and nonfacet crystal region in the framework of Burton-Prim-Slichter theory.

Analysis and evaluation of processes and equipment in tasks 2 and 4 of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1978-01-01

Several experimental and projected Czochralski crystal growing process methods were studied and compared to available operations and cost-data of recent production Cz-pulling, in order to elucidate the role of the dominant cost contributing factors. From this analysis, it becomes apparent that the specific add-on costs of the Cz-process can be expected to be reduced by about a factor of three by 1982, and about a factor of five by 1986. A format to guide in the accumulation of the data needed for thorough techno-economic analysis of solar cell production processes was developed.

Growth and characterization of a Li2Mg2(MoO4)3 scintillating bolometer

NASA Astrophysics Data System (ADS)

Danevich, F. A.; Degoda, V. Ya.; Dulger, L. L.; Dumoulin, L.; Giuliani, A.; de Marcillac, P.; Marnieros, S.; Nones, C.; Novati, V.; Olivieri, E.; Pavlyuk, A. A.; Poda, D. V.; Trifonov, V. A.; Yushina, I. V.; Zolotarova, A. S.

2018-05-01

Lithium magnesium molybdate (Li2Mg2(MoO4)3) crystals were grown by the low-thermal-gradient Czochralski method. Luminescence properties of the material (emission spectra, thermally stimulated luminescence, dependence of intensity on temperature, phosphorescence) have been studied under X-ray excitation in the temperature interval from 8 to 400 K, while at the same being operated as a scintillating bolometer at 20 mK for the first time. We demonstrated that Li2Mg2(MoO4)3 crystals are a potentially promising detector material to search for neutrinoless double beta decay of 100Mo.

Optical spectroscopy and diode-pumped laser characteristics of codoped Tm-Ho:YLF and Tm-Ho:BaYF: a comparative analysis

NASA Astrophysics Data System (ADS)

Cornacchia, F.; Sani, E.; Toncelli, A.; Tonelli, M.; Marano, M.; Taccheo, S.; Galzerano, G.; Laporta, P.

Single crystals of monoclinic BaY2F8 and tetragonal LiYF4 codoped with the same Tm3+ and Ho3+ concentrations were successfully grown by the Czochralski method. Here we present a comparative analysis of the two hosts including spectroscopic characterization and cw diode-pumped laser experiments in the 2-μm wavelength region at room temperature. The main differences between the two hosts are a lower slope efficiency associated with a much wider tuning range (2005-2094 nm) of BaY2F8 with respect to LiYF4.

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

NASA Astrophysics Data System (ADS)

Sabanskis, A.; Virbulis, J.

2018-05-01

Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

Bridgman growth of large-aperture yttrium calcium oxyborate crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Anhua, E-mail: wuanhua@mail.sic.ac.cn; Jiang, Linwen; Qian, Guoxing

2012-09-15

Highlights: ► YCOB is a novel non-linear optical crystal possessing good thermal, mechanical and nonlinear optical properties. ► Large size crystal growth is key technology question for YCOB crystal. ► YCOB crystals 3 in. in diameter were grown with modified vertical Bridgman method. ► It is a more effective growth method to obtain large size and high quality YCOB crystal. -- Abstract: Large-aperture yttrium calcium oxyborate YCa{sub 4}O(BO{sub 3}){sub 3} (YCOB) crystals with 3 in. in diameter were grown with modified vertical Bridgman method, and the large crystal plate (63 mm × 68 mm × 20 mm) was harvested formore » high-average power frequency conversion system. The crack, facet growth and spiral growth can be effectively controlled in the as-grown crystal, and Bridgman method displays more effective in obtain large size and high quality YCOB crystal plate than Czochralski technique.« less

Evolution of the sapphire industry: Rubicon Technology and Gavish

NASA Astrophysics Data System (ADS)

Harris, Daniel C.

2009-05-01

A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now makes finished products for the semiconductor and medical industries from HDSM, Stepanov, and Kyropoulos sapphire.

Processing experiments on non-Czochralski silicon sheet

NASA Technical Reports Server (NTRS)

Pryor, R. A.; Grenon, L. A.; Sakiotis, N. G.; Pastirik, E. M.; Sparks, T. O.; Legge, R. N.

1981-01-01

A program is described which supports and promotes the development of processing techniques which may be successfully and cost-effectively applied to low-cost sheets for solar cell fabrication. Results are reported in the areas of process technology, cell design, cell metallization, and production cost simulation.

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

NASA Astrophysics Data System (ADS)

Gao, Chao; Lu, Yunhao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren

2014-01-01

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300-500 °C leads to further B deactivation, while that at 600-800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B2I complexes results in further B deactivation in the following CFA at 300-500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600-800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

Large area Czochralski silicon

NASA Technical Reports Server (NTRS)

Rea, S. N.; Gleim, P. S.

1977-01-01

The overall cost effectiveness of the Czochralski process for producing large-area silicon was determined. The feasibility of growing several 12 cm diameter crystals sequentially at 12 cm/h during a furnace run and the subsequent slicing of the ingot using a multiblade slurry saw were investigated. The goal of the wafering process was a slice thickness of 0.25 mm with minimal kerf. A slice + kerf of 0.56 mm was achieved on 12 cm crystal using both 400 grit B4C and SiC abrasive slurries. Crystal growth experiments were performed at 12 cm diameter in a commercially available puller with both 10 and 12 kg melts. Several modifications to the puller hoz zone were required to achieve stable crystal growth over the entire crystal length and to prevent crystallinity loss a few centimeters down the crystal. The maximum practical growth rate for 12 cm crystal in this puller design was 10 cm/h, with 12 to 14 cm/h being the absolute maximum range at which melt freeze occurred.

Record Efficiency on Large Area P-Type Czochralski Silicon Substrates

NASA Astrophysics Data System (ADS)

Hallam, Brett; Wenham, Stuart; Lee, Haeseok; Lee, Eunjoo; Lee, Hyunwoo; Kim, Jisun; Shin, Jeongeun; Cho, Kyeongyeon; Kim, Jisoo

2012-10-01

In this work we report a world record independently confirmed efficiency of 19.4% for a large area p-type Czochralski grown solar cell fabricated with a full area aluminium back surface field. This is achieved using the laser doped selective emitter solar cell technology on an industrial screen print production line with the addition of laser doping and light induced plating equipment. The use of a modified diffusion process is explored in which the emitter is diffused to a sheet resistance of 90 Ω/square and subsequent etch back of the emitter to 120 Ω/square. This results in a lower surface concentration of phosphorus compared to that of emitters diffused directly to 120 Ω/square. This modified diffusion process subsequently reduces the conductivity of the surface in relation to that of the heavily diffused laser doped contacts and avoids parasitic plating, resulting an average absolute increase in efficiency of 0.4% compared to cells fabricated without an emitter etch back process.

Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors

NASA Astrophysics Data System (ADS)

Härkönen, J.; Tuovinen, E.; Luukka, P.; Kassamakov, I.; Autioniemi, M.; Tuominen, E.; Sane, P.; Pusa, P.; Räisänen, J.; Eremin, V.; Verbitskaya, E.; Li, Z.

2007-12-01

n +/p -/p + pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detectors were irradiated by 9 MeV protons at the Accelerator Laboratory of University of Helsinki up to 1 MeV neutron equivalent fluence of 2×10 15 n/cm 2. In some of the detectors the thermal donors (TD) were introduced by intentional heat treatment at 430 °C. Hole trapping time constants and full depletion voltage values were extracted from the TCT data. We observed that hole trapping times in the order of 10 ns were found in heavily (above 1×10 15 n eq/cm 2) irradiated samples. These detectors could be fully depleted below 500 V in the temperature range of 140-180 K.

Radiation damage in lithium-counterdoped n/p silicon solar cells

NASA Technical Reports Server (NTRS)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.

Continuous Czochralski growth. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

NASA Technical Reports Server (NTRS)

1982-01-01

The improvement of growth rates using radiation shielding and investigation of the crucible melt interaction for improved yields were emphasized. Growth runs were performed from both 15 and 16 inch diameter crucibles, producing 30 and 37 kg ingots respectively. Efforts to increase the growth rate of 150 mm diameter ingots were limited by temperature instabilities believed to be caused by undesirable thermal convections in the larger melts. The radiation shield improved the growth rate somewhat, but the thermal instability was still evident, leading to nonround ingots and loss of dislocation-free structure. A 38 kg crystal was grown to demonstrate the feasibility of producing 150 kg with four growth cycles. After the grower construction phase, the Hamco microprocessor control system was interfaced to the growth facility, including the sensor for automatic control of seeding temperature, and the sensor for automatic shouldering. Efforts focused upon optimization of the seeding, necking, and shoulder growth automation programs.

Czochralski growth of Gd3(Al5-xGax)O12 (GAGG) single crystals and their scintillation properties

NASA Astrophysics Data System (ADS)

Kurosawa, Shunsuke; Shoji, Yasuhiro; Yokota, Yuui; Kamada, Kei; Chani, Valery I.; Yoshikawa, Akira

2014-05-01

Ce:Gd3(AlxGa1-x)5O12 (x=2.5/5 and 3/5, Ce:GAGG-2.5 and Ce:GAGG-3) crystals were grown by the Czochralski process in order to reduce cost of the starting materials as compared with conventional Ce:Gd3Al2Ga3O12 (Ce:GAGG-2) crystal which have high light output. Although perovskite phase was detected in Ce:GAGG-3, Ce:GAGG-2.5 had single-phase garnet structure. Solidification fraction for the Ce:GAGG-2.5 growth was 0.52. Optical properties including transmittance, emission, and excitation spectra of 30 samples cut from the Ce:GAGG-2.5 bulk ingot did not depend on their original position along the growth axis. These samples had light outputs of approximately 58,000±3000 photons/MeV. However, scintillation decay times varied from 140 to 200 ns and depended on the position clearly.

Electro-optical detection of THz radiation in Fe implanted LiNbO3

NASA Astrophysics Data System (ADS)

Wang, Yuhua; Ni, Hongwei; Zhan, Weiting; Yuan, Jie; Wang, Ruwu

2013-01-01

In this letter, the authors present first observation of terahertz generation from Fe implantation of LiNbO3 crystal substrate. LiNbO3 single crystal is grown by Czochralski method. Metal nanoparticles synthesized by Fe ion implantation were implanted into LiNbO3 single crystal using metal vapor vacuum arc (MEVVA) ion source. 1 kHz, 35 fs laser pulsed centered at 800 nm were focused onto the samples. Terahertz was generated via optical rectification. The findings suggest that under the investigated implantation parameter, a spectral component in excess of 0.44 THz emission were found from Fe ion implantation of LiNbO3.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuz'micheva, G. M., E-mail: galkuz@mitht.ru; Zaharko, O.; Tyunina, E. A.

Langatate crystals of the general composition La{sub 3}(Ga{sub 0.5}Ta{sub 0.5})Ga{sub 5}O{sub 14}, grown by the Czochralski method, have been investigated by neutron diffraction (single crystals) and X-ray diffraction (ground single crystals). The crystals were grown in an atmosphere of 99% Ar + 1% O{sub 2} in the Y54{sup o} direction (rotation by 54{sup o} with respect to the y axis), without subsequent annealing (orange crystal) or with vacuum annealing (colorless crystal). It is established that colorless crystals have a higher gallium content and, therefore, a larger number of oxygen vacancies in comparison with colored crystals; this is a possible reasonmore » for their lower microhardness.« less

Structure and thermal expansion of Ca9Gd(VO4)7: A combined powder-diffraction and dilatometric study of a Czochralski-grown crystal

NASA Astrophysics Data System (ADS)

Paszkowicz, Wojciech; Shekhovtsov, Alexei; Kosmyna, Miron; Loiko, Pavel; Vilejshikova, Elena; Minikayev, Roman; Romanowski, Przemysław; Wierzchowski, Wojciech; Wieteska, Krzysztof; Paulmann, Carsten; Bryleva, Ekaterina; Belikov, Konstantin; Fitch, Andrew

2017-11-01

Materials of the Ca9RE(VO4)7 (CRVO) formula (RE = rare earth) and whitlockite-related structures are considered for applications in optoelectronics, e.g., in white-light emitting diodes and lasers. In the CRVO structure, the RE atoms are known to share the site occupation with Ca atoms at two or three among four Ca sites, with partial occupancy values depending on the choice of the RE atom. In this work, the structure and quality of a Czochralski-grown crystal of this family, Ca9Gd(VO4)7 (CGVO), are studied using X-ray diffraction methods. The room-temperature structure is refined using the powder diffraction data collected at a high-resolution synchrotron beamline ID22 (ESRF, Grenoble); for comparison purposes, a laboratory diffraction pattern was collected and analyzed, as well. The site occupancies are discussed on the basis of comparison with literature data of isostructural synthetic crystals of the CRVO series. The results confirm the previously reported site-occupation scheme and indicate a tendency of the CGVO compound to adopt a Gd-deficient composition. Moreover, the thermal expansion coefficient is determined for CGVO as a function of temperature in the 302-1023 K range using laboratory diffraction data. Additionally, for CGVO and six other single crystals of the same family, thermal expansion is studied in the 298-473 K range, using the dilatometric data. The magnitude and anisotropy of thermal expansion, being of importance for laser applications, are discussed for these materials.

Fast Pulling of n-Type Si Ingots for Enhanced Si Solar Cell Production

NASA Astrophysics Data System (ADS)

Kim, Kwanghun; Park, Sanghyun; Park, Jaechang; Pang, Ilsun; Ryu, Sangwoo; Oh, Jihun

2018-07-01

Reducing the manufacturing costs of silicon substrates is an important issue in the silicon-based solar cell industry. In this study, we developed a high-throughput ingot growth method by accelerating the pulling speed in the Czochralski process. By controlling the heat flow of the ingot growth chamber and at the solid-liquid interfaces, the pulling speed of an ingot could be increased by 15% compared to the conventional method, while retaining high quality. The wafer obtained at a high pulling speed showed an enhanced minority carrier lifetime compared with conventional wafers, due to the vacancy passivation effect, and also demonstrated comparable bulk resistivity and impurities. The results in this work are expected to open a new way to enhance the productivity of Si wafers used for Si solar cells, and therefore, to reduce the overall manufacturing cost.

Fast Pulling of n-Type Si Ingots for Enhanced Si Solar Cell Production

NASA Astrophysics Data System (ADS)

Kim, Kwanghun; Park, Sanghyun; Park, Jaechang; Pang, Ilsun; Ryu, Sangwoo; Oh, Jihun

2018-03-01

Reducing the manufacturing costs of silicon substrates is an important issue in the silicon-based solar cell industry. In this study, we developed a high-throughput ingot growth method by accelerating the pulling speed in the Czochralski process. By controlling the heat flow of the ingot growth chamber and at the solid-liquid interfaces, the pulling speed of an ingot could be increased by 15% compared to the conventional method, while retaining high quality. The wafer obtained at a high pulling speed showed an enhanced minority carrier lifetime compared with conventional wafers, due to the vacancy passivation effect, and also demonstrated comparable bulk resistivity and impurities. The results in this work are expected to open a new way to enhance the productivity of Si wafers used for Si solar cells, and therefore, to reduce the overall manufacturing cost.

Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

NASA Astrophysics Data System (ADS)

Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

2016-08-01

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Scintillation properties of Gd3Al2Ga3O12:Ce (GAGG:Ce): a comparison between monocrystalline and nanoceramic samples

NASA Astrophysics Data System (ADS)

Drozdowski, Winicjusz; Witkowski, Marcin E.; Solarz, Piotr; Głuchowski, Paweł; Głowacki, Michał; Brylew, Kamil

2018-05-01

In this Communication the behavior of two types of Gd3Al2Ga3O12:Ce samples under gamma and X-ray excitation is compared. Single crystals of GAGG:1%Ce have been grown by the Czochralski technique, while nanoceramic pills of GAGG:1%Ce have been fabricated by the LTHP sintering from nanocrystalline powders prepared by the Pechini method. The results of pulse height, scintillation time profile, radioluminescence as a function of temperature, and low temperature thermoluminescence measurements, are reported, indicating that monocrystals are still a better choice for scintillator application, nevertheless some of the properties of nanoceramics are indeed promising and there should be a room for improvement.

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Chao; Dong, Peng; Yi, Jun

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extendedmore » B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.« less

Mutiple Czochralski growth of silicon crystals from a single crucible

NASA Technical Reports Server (NTRS)

Lane, R. L.; Kachare, A. H.

1980-01-01

An apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.

Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers

NASA Astrophysics Data System (ADS)

Goto, Hiroyuki; Pan, Lian-Sheng; Tanaka, Masafumi; Kashima, Kazuhiko

2001-06-01

The properties of nitrogen-doped and hydrogen-annealed Czochralski-grown silicon (NHA-CZ-Si) wafers were investigated in this study. The quality of the subsurface was investigated by monitoring the generation lifetime of minority carriers, as measured by the capacitance-time measurements of a metal oxide silicon capacitor (MOS C-t). The intrinsic gettering (IG) ability was investigated by determining the nickel concentration on the surface and in the subsurface as measured by graphite furnace atomic absorption spectrometry (GFAAS) after the wafer was deliberately contaminated with nickel. From the results obtained, the generation lifetimes of these NHA-CZ-Si wafers were determined to be almost the same as, or a little longer than those of epitaxial wafers, and the IG ability was proportional to the total volume of oxygen precipitates [i.e., bulk micro defects (BMDs)], which was influenced by the oxygen and nitrogen concentrations in the wafers. Therefore, it is suggested that the subsurface of the NHA-CZ-Si wafers is of good quality and the IG capacity is controllable by the nitrogen and oxygen concentrations in the wafers.

Modeling the effect of crystal and crucible rotation on the interface shape in Czochralski growth of piezoelectric langatate crystals

NASA Astrophysics Data System (ADS)

Stelian, C.; Nehari, A.; Lasloudji, I.; Lebbou, K.; Dumortier, M.; Cabane, H.; Duffar, T.

2017-10-01

Single La3Ga5.5Ta0.5O14 (LGT) crystals have been grown by using the Czochralski technique with inductive heating. Some ingots exhibit imperfections such as cracks, dislocations and striations. Numerical modeling is applied to investigate the factors affecting the shape of the crystal-melt interface during the crystallization of ingots having 3 cm in diameter. It was found that the conical shape of the interface depends essentially on the internal radiative exchanges in the semi-transparent LGT crystal. Numerical results are compared to experimental visualization of the growth interface, showing a good agreement. The effect of the forced convection produced by the crystal and crucible rotation is numerically investigated at various rotation rates. Increasing the crystal rotation rate up to 50 rpm has a significant flattening effect on the interface shape. Applying only crucible rotation enhances the downward flow underneath the crystal, leading to an increased interface curvature. Counter rotation between the crystal and the crucible results in a distorted shape of the interface.

Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

NASA Technical Reports Server (NTRS)

Schmid, F.; Khattak, C. P.

1978-01-01

Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

NASA Astrophysics Data System (ADS)

Galazka, Zbigniew; Ganschow, Steffen; Fiedler, Andreas; Bertram, Rainer; Klimm, Detlef; Irmscher, Klaus; Schewski, Robert; Pietsch, Mike; Albrecht, Martin; Bickermann, Matthias

2018-03-01

We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-Ga2O3 crystal structure strongly depends on O2 concentration in the growth atmosphere which has a noticeable impact on decomposition of Ga2O3 and Cr2O3, as well as on the charge state of Cr and Ce. Effective segregation coefficients for Cr are in the range of 3.1-1.5 at 7-24 vol% O2, while for Ce they are roughly below 0.01 at 1.5-34 vol% O2. The effective segregation coefficient for Al is 1.1 at 1.5-21 vol% O2. Both dopants Ce and Al have a thermodynamically stabilizing effect on β-Ga2O3 crystal growth by supressing decomposition. While Ce has no impact on the optical transmittance in the ultraviolet and visible regions, in Cr doped crystals we observe three absorption bands due to Cr3+ on octahedral Ga sites, one in the ultraviolet merging with the band edge absorption of β-Ga2O3 and two in the visible spectrum, for which we estimate the absorption cross sections. Al doping also does not induce dopant related absorption bands but clearly shifts the absorption edge as one expects for a solid-solution crystal Ga2(1-x)Al2xO3 still in the monoclinic phase. For the highest doping concentration (Ga1.9Al0.1O3) we estimate an increase of the energy gap by 0.11 eV.

Lifetime degradation of n-type Czochralski silicon after hydrogenation

NASA Astrophysics Data System (ADS)

Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

2018-04-01

Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

NASA Astrophysics Data System (ADS)

Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj; Unocic, Raymond R.; Rack, Philip D.; Baddorf, Arthur P.; Ivanov, Ilia N.; Lavrik, Nickolay V.; List, Frederick; Gupta, Nitant; Bets, Ksenia V.; Yakobson, Boris I.; Smirnov, Sergei N.

2018-03-01

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice1 in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection2 approach, which is now realized in 2D geometry. The method relies on `self-selection' of the fastest-growing domain orientation, which eventually overwhelms the slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h-1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.

Process for making silicon from halosilanes and halosilicons

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Process for making silicon

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Probing Single Pt Atoms in Complex Intermetallic Al13Fe4.

PubMed

Yamada, Tsunetomo; Kojima, Takayuki; Abe, Eiji; Kameoka, Satoshi; Murakami, Yumi; Gille, Peter; Tsai, An Pang

2018-03-21

The atomic structure of a 0.2 atom % Pt-doped complex metallic alloy, monoclinic Al 13 Fe 4 , was investigated using a single crystal prepared by the Czochralski method. High-angle annular dark-field scanning transmission electron microscopy showed that the Pt atoms were dispersed as single atoms and substituted at Fe sites in Al 13 Fe 4 . Single-crystal X-ray structural analysis revealed that the Pt atoms preferentially substitute at Fe(1). Unlike those that have been reported, Pt single atoms in the surface layers showed lower activity and selectivity than those of Al 2 Pt and bulk Pt for propyne hydrogenation, indicating that the active state of a given single-atom Pt site is strongly dominated by the bonding to surrounding Al atoms.

Spectroscopic analysis and efficient diode-pumped 1.9 μm Tm3+-doped β'-Gd2(MoO4)3 crystal laser.

PubMed

Tang, Jianfeng; Chen, Yujin; Lin, Yanfu; Gong, Xinghong; Huang, Jianhua; Luo, Zundu; Huang, Yidong

2011-07-04

Tm3+-doped β'-Gd2(MoO4)3 single crystal was grown by the Czochralski method. Spectroscopic analysis was carried out along different polarizations. End-pumped by a quasi-cw diode laser at 795 nm in a plano-concave cavity, an average laser output power of 58 mW around 1.9 μm was achieved in a 0.93-mm-thick crystal when the output coupler transmission was 7.1%. The absorbed pump threshold was 8 mW and the slope efficiency of the laser was 57%. This crystal has smooth and broad gain curve around 1.9 μm, which shows that it is also a potential gain medium for tunable and short pulse lasers.

Effect of oxygen on dislocation multiplication in silicon crystals

NASA Astrophysics Data System (ADS)

Fukushima, Wataru; Harada, Hirofumi; Miyamura, Yoshiji; Imai, Masato; Nakano, Satoshi; Kakimoto, Koichi

2018-03-01

This paper aims to clarify the effect of oxygen on dislocation multiplication in silicon single crystals grown by the Czochralski and floating zone methods using numerical analysis. The analysis is based on the Alexander-Haasen-Sumino model and involves oxygen diffusion from the bulk to the dislocation cores during the annealing process in a furnace. The results show that after the annealing process, the dislocation density in silicon single crystals decreases as a function of oxygen concentration. This decrease can be explained by considering the unlocking stress caused by interstitial oxygen atoms. When the oxygen concentration is 7.5 × 1017 cm-3, the total stress is about 2 MPa and the unlocking stress is less than 1 MPa. As the oxygen concentration increases, the unlocking stress also increases; however, the dislocation velocity decreases.

Dopant occupancy and UV-VIS-NIR spectroscopy of Mg (0, 4, 5 and 6 mol.%):Dy:LiNbO3 crystal

NASA Astrophysics Data System (ADS)

Dai, Li; Liu, Chunrui; Han, Xianbo; Wang, Luping; Tan, Chao; Yan, Zhehua; Xu, Yuheng

2017-09-01

A series of Dy:LiNbO3 crystals with x mol.% Mg2+ ions (x =0, 4, 5 and 6 mol.%) were grown by the Czochralski method. The effective segregation coefficient of Mg2+ and Dy3+ ions was studied by the inductively coupled plasma-atomic emission spectrometry (ICP-AES). UV-VIS-NIR absorption spectra and Judd-Ofelt theory were used to investigate their spectroscopic properties. J-O intensity parameters (Ω2 = 7.53 × 10-20cm2, Ω4 = 6.98 × 10-20cm2, and Ω6 = 3.09 × 10-20cm2) and larger spectroscopic quality factor (X = 2.26) for Mg:(6 mol.%)Dy:LiNbO3 crystals were obtained.

Features of bicrystal growth during the directional crystallization of metal melts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gubernatorov, V. V.; Sycheva, T. S., E-mail: sych@imp.uran.ru; Gundyrev, V. M.

2017-03-15

The factors responsible for the formation of different configurations of boundaries between adjacent crystallites during their growth from melt by Bridgman and Czochralski methods have been considered by an of example Fe–20 wt % Ga alloy and Ni bicrystals. It is found that the configuration of intercrystallite boundary is related to the features of crystallite growth, caused by the strained state of intercrystallite and interphase (crystal–melt) boundaries, the difference in the linear thermal expansion coefficients of the crystallite boundaries and bulk, and the shape (geometry) of the bicrystal cross section. It is suggested that the strained state of boundaries andmore » the formation of substructure in crystallites during directional crystallization from metal melt are significantly affected by their deformation under the melt weight.« less

Laser action of Pr3+ in LiYF4 and spectroscopy of Eu2+-sensitized Pr in BaY2F8

NASA Astrophysics Data System (ADS)

Knowles, David S.; Gabbe, David; Jenssen, H. P.; Zhang, Z.

1988-06-01

Laser action in flashlamp-pumped Pr:LiYF4 at room temperature is observed at 640 nm with a 15-J threshold, but only about 0.01 percent slope efficiency. Increased efficiency from sensitizing the Pr with Eu2+ is explored in the system Eu,Pr:BaY2F8. Codoped samples have been grown by the Czochralski growth method, and energy transfer between 2+ and Pr3+ is observed to be very weak. This is probably due to the poor overlap of the Eu2+ emission with the Pr3+ absorption lines, leading to the conclusion that hosts with a stronger crystal field at the Eu2+ site need to be identified.

Development of silicon growth techniques from melt with surface heating

NASA Astrophysics Data System (ADS)

Kravtsov, Anatoly

2018-05-01

The paper contains literary and personal data on the development history of silicon-growing technology with volumetric and surface melt heating. It discusses the advantages and disadvantages of surface-heating technology. Examples are given of the implementation of such processes in the 60s-70s of the last century, and the reasons for the discontinuation of the relevant work. It describes the main solutions for the implementation of crystal growth process with the electron-beam heating of the melt surface, implemented by KEPP EU (Latvia). It discusses differences in the management of the growth process for the crystals with constant diameters compared to the Czochralski method. It lists geometrical and electro-physical properties of the obtained crystals. It describes the possible use of such crystals and the immediate challenges of technology development.

Growth and spectral-luminescent study of SrMoO4 crystals doped with Tm3+ ions

NASA Astrophysics Data System (ADS)

Dunaeva, E. E.; Zverev, P. G.; Doroshenko, M. E.; Nekhoroshikh, A. V.; Ivleva, L. I.; Osiko, V. V.

2016-03-01

SrMoO4 crystals doped with Tm3+ ions have been produced from a melt using the Czochralski method; their spectral-luminescent characteristics have been studied, and laser radiation has been generated at the wavelength of 1.94 μm using laser-diode excitation. The high absorption section at the wavelength of 795 nm, the fairly high luminescence section, the long lifetime at the upper laser level 3F4 of 1.5 ms, and a wide luminescence band allow one to hope for developing efficient tunable Tm3+: SrMoO4 crystal lasers with diode pumping in the range of 1.7-2.0 μm, which are capable of implementing SRS self-transformation of radiation into the middle IR band.

A review of high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Rohatgi, A.

1986-01-01

Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

Effect of void shape in Czochralski-Si wafers on the intensity of laser-scattering

NASA Astrophysics Data System (ADS)

Takahashi, J.; Kawakami, K.; Nakai, K.

2001-06-01

The shape effect of anisotropic-shaped microvoid defects in Czochralski-grown silicon wafers on the intensity of laser scattering has been investigated. The size and shape of the defects were examined by means of transmission electron microscopy. Octahedral voids in conventional (nitrogen-undoped) wafers showed an almost isotropic scattering property under the incident condition of a p-polarization beam. On the other hand, parallelepiped-plate-shaped voids in nitrogen-doped wafers showed an anisotropic scattering property on both p- and s-polarized components of scattered light, depending strongly on the incident laser direction. The measured results were explained not by scattering calculation using Born approximation but by calculation based on Rayleigh scattering. It was found that the s component is explained by an inclination of a dipole moment induced on a defect from the scattering plane. Furthermore, using numerical electromagnetic analysis it was shown that the asymmetric behavior of the s component on the parallelepiped-plate voids is ascribed to the parallelepiped shape effect. These results suggest that correction of the scattering intensity is necessary to evaluate the size and volume of anisotropic-shaped defects from the scattered intensity.

The effect of isolated dislocations on substrate and device properties in low-dislocation czochralski GaAs

NASA Astrophysics Data System (ADS)

Hunter, A. T.; Kimura, H.; Olsen, H. M.; Winston, H. V.

1986-07-01

Czochralski GaAs grown with In incorporated into the melt has large regions with fewer than 100 cm-2 dislocations. We have examined the effect of these dislocations on substrate and device properties. Infrared transmission images reveal dark filaments of high EL2 concentration a few tens of microns in diameter surrounding dislocations, Cathodo and photoluminescence images show orders of magnitude contrast in band-edge luminescence intensity near dislocations. Single dislocations appear to be surrounded by bright rings ˜200 μm in diameter in luminescence images, with dark spots 50 to 75 μm across centered on the dislocation. More complex luminescence structures with larger dark regions (˜150 μ across) and central bright spots are centered on small dislocation clusters. Differences in lifetime of photogenerated electrons or holes are the most likely cause of the luminescence contrast. Anneals typical of our post-implant processing substantially lower the luminescence contrast, suggesting the defect lowering the lifetime is removed by annealing. This may partially explain why we do not observe any effect of dislocation proximity on the properties of devices made in the material, in spite of the enormous luminescence contrast observed near dislocations.

Reduction of oxygen concentration by heater design during Czochralski Si growth

NASA Astrophysics Data System (ADS)

Zhou, Bing; Chen, Wenliang; Li, Zhihui; Yue, Ruicun; Liu, Guowei; Huang, Xinming

2018-02-01

Oxygen is one of the highest-concentration impurities in single crystals grown by the Czochralski (CZ) process, and seriously impairs the quality of the Si wafer. In this study, computer simulations were applied to design a new CZ system. A more appropriate thermal field was acquired by optimization of the heater structure. The simulation results showed that, compared with the conventional system, the oxygen concentration in the newly designed CZ system was reduced significantly throughout the entire CZ process because of the lower crucible wall temperature and optimized convection. To verify the simulation results, experiments were conducted on an industrial single-crystal furnace. The experimental results showed that the oxygen concentration was reduced significantly, especially at the top of the CZ-Si ingot. Specifically, the oxygen concentration was 6.19 × 1017 atom/cm3 at the top of the CZ-Si ingot with the newly designed CZ system, compared with 9.22 × 1017 atom/cm3 with the conventional system. Corresponding light-induced degradation of solar cells based on the top of crystals from the newly designed CZ system was 1.62%, a reduction of 0.64% compared with crystals from the conventional system (2.26%).

Oscillating-Crucible Technique for Silicon Growth

NASA Technical Reports Server (NTRS)

Daud, T.; Dumas, K. A.; Kim, K. M.; Schwuttke, G. H.; Smetana, P.

1984-01-01

Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality.

The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

NASA Astrophysics Data System (ADS)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

2014-09-01

This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

Experiment and density functional theory analyses of GdTaO4 single crystal

NASA Astrophysics Data System (ADS)

Ding, Shoujun; Kinross, Ashlie; Wang, Xiaofei; Yang, Huajun; Zhang, Qingli; Liu, Wenpeng; Sun, Dunlu

2018-05-01

GdTaO4 is a type of excellent materials that can be used as scintillation, laser matrix as well as self-activated phosphor has generated significant interest. Whereas its band structure, electronic structure and optical properties are still need elucidation. To solve this intriguing problem, high-quality GdTaO4 single crystal (M-type) was grown successfully using Czochralski method. Its structure as well as optical properties was determined in experiment. Moreover, a systematic theoretical calculation based on the density function theory methods were performed on M-type and M‧-type GdTaO4 and their band structure, density of state as well as optical properties were obtained. Combine with the performed experiment results, the calculated results were proved with high reliability. Hence, the calculated results obtained in this work could provide a deep understanding of GdTaO4 material, which also useful for the further investigation on GdTaO4 material.

Growth, spectroscopic properties and laser output of Er : Ca 4YO(BO 3) 3 and Er : Yb : Ca 4YO(BO 3) 3 crystals

NASA Astrophysics Data System (ADS)

Zhang, Huaijin; Meng, Xianlin; Wang, Changqing; Wang, Pu; Zhu, Li; Liu, Xuesong; Dong, Chunming; Yang, Yuyong; Cheng, Ruiping; Dawes, Judith; Piper, Jim; Zhang, Shaojun; Sun, Lianke

2000-09-01

In this paper, Er : Ca 4YO(BO 3) 3 (Er : YCOB) and Er : Yb : Ca 4YO(BO 3) 3 (Er : Yb : YCOB) crystals with large size and excellent quality have been grown by the Czochralski method. The absorption and emission spectra of Er : YCOB and Er : Yb : YCOB crystals have been measured; the emission spectrum of Er : Yb : YCOB crystal shows that the strongest emission peak is located at 1537 nm. An output power of about 2 mW at the wavelength of 1553 nm has been obtained under the pumping power of a fiber-coupled laser diode (LD) of 1600 mW at 976 nm, using a Y direction cut 2.5 mm thick Er : Yb : YCOB crystal sample.

Polarized spectral properties and 1.5-1.6 μm laser operation of Er:Sr3Yb2(BO3)4 crystal

NASA Astrophysics Data System (ADS)

Lin, F. L.; Huang, J. H.; Chen, Y. J.; Gong, X. H.; Lin, Y. F.; Luo, Z. D.; Huang, Y. D.

2013-10-01

Undoped and Er3+-doped Sr3Yb2(BO3)4 crystals were grown by the Czochralski method. Room temperature polarized spectral properties of the Er:Sr3Yb2(BO3)4 crystal were investigated. The efficiency of the energy transfer from Yb3+ to Er3+ ions in this crystal was calculated to be about 95%. End-pumped by a diode laser at 970 nm in a hemispherical cavity, a 0.75 W quasi-CW laser at 1.5-1.6 μm with a slope efficiency of 7% and an absorbed pump threshold of 3.8 W was achieved in a 0.5-mm-thick Z-cut crystal glued on a 5-mm-thick pure YAG crystal with UV-curable adhesive.

Optical study of Tm-doped solid solution (Sc0.5Y0.5)2SiO5 crystal

NASA Astrophysics Data System (ADS)

Shi, Jiaojiao; Liu, Bin; Zheng, Lihe; Wang, Qingguo; Tang, Huili; Liu, Junfang; Su, Liangbi; Wu, Feng; Zhao, Hengyu; He, Nuotian; Li, Na; Li, Qiu; Guo, Chao; Xu, Jun; Yang, Kejian; Xu, Xiaodong; Ryba-Romanowski, Witold; Lisiecki, Radosław; Solarz, Piotr

2018-04-01

Tm-doped (Sc0.5Y0.5)2SiO5 (SYSO) crystals were grown by Czochralski method. The UV-VIR-NIR absorption spectra and the near-infrared emission spectra were measured and analysed by the Judd-Ofelt approach. Temperature influence on both absorption and emission spectra has been determined from the data recorded at room temperature and 10 K. It has been found that the structural disorder resulting from dissimilar ionic radii of Sc3+ and Y3+ in the solid solution (Sc0.5Y0.5)2SiO5 crystal brings about a strong inhomogeneous broadening of Tm3+ ions spectra. However, it affects the excited state relaxation dynamics inherent to thulium-doped Y2SiO5 and Sc2SiO5 hosts weakly.

Spectral and laser properties of Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 crystal at 1.55 µm

NASA Astrophysics Data System (ADS)

Gong, Guoliang; Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-04-01

An Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 (CNGS) crystal was grown by the Czochralski method. Spectral properties of the crystal, including the polarized absorption and fluorescence spectra, the fluorescence decay, as well as the energy transfer efficiency from Yb3+ to Er3+ were investigated in detail. End-pumped by a 976 nm diode laser, a 1556 nm continuous-wave laser with a maximum output power of 202 mW and a slope efficiency of 11.4% was achieved in the Er,Yb,Ce:CNGS crystal. The results indicate the Er,Yb,Ce:CNGS crystal is a promising 1.55 µm laser gain medium.

Study on growth techniques and macro defects of large-size Nd:YAG laser crystal

NASA Astrophysics Data System (ADS)

Quan, Jiliang; Yang, Xin; Yang, Mingming; Ma, Decai; Huang, Jinqiang; Zhu, Yunzhong; Wang, Biao

2018-02-01

Large-size neodymium-doped yttrium aluminum garnet (Nd:YAG) single crystals were grown by the Czochralski method. The extinction ratio and wavefront distortion of the crystal were tested to determine the optical homogeneity. Moreover, under different growth conditions, the macro defects of inclusion, striations, and cracking in the as-grown Nd:YAG crystals were analyzed. Specifically, the inclusion defects were characterized using scanning electron microscopy and energy dispersive spectroscopy. The stresses of growth striations and cracking were studied via a parallel plane polariscope. These results demonstrate that improper growth parameters and temperature fields can enhance defects significantly. Thus, by adjusting the growth parameters and optimizing the thermal environment, high-optical-quality Nd:YAG crystals with a diameter of 80 mm and a total length of 400 mm have been obtained successfully.

Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

NASA Technical Reports Server (NTRS)

Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

1979-01-01

A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

Impact of Lu/Gd ratio and activator concentration on structure and scintillation properties of LGSO:Ce crystals

NASA Astrophysics Data System (ADS)

Sidletskiy, O.; Bondar, V.; Grinyov, B.; Kurtsev, D.; Baumer, V.; Belikov, K.; Katrunov, K.; Starzhinsky, N.; Tarasenko, O.; Tarasov, V.; Zelenskaya, O.

2010-02-01

We have studied the dependence of structural and scintillation characteristics of Lu 2 xGd 2-2 xSiO 5:Ce (LGSO:Ce) crystals on cation composition. LGSO:Ce crystals at x=0-1 have been obtained by the Czochralski method. We report here a strong correlation between ionic radii of trivalent cations and their distribution between non-equivalent sites in lattice. By choosing the optimal Lu/Gd ratio and Ce concentration we were able to obtain the light output by˜70%, as compared to LSO:Ce crystals, and energy resolution ˜7 at% 662 KeV ( 137Cs); the afterglow level was decreased by 1-3 orders of magnitude as compared to LSO:Ce. We also discuss the possible mechanisms of control on scintillation characteristics of mixed orthosilicates.

Optimization of the cooling profile to achieve crack-free Yb:S-FAP crystals

NASA Astrophysics Data System (ADS)

Fang, H. S.; Qiu, S. R.; Zheng, L. L.; Schaffers, K. I.; Tassano, J. B.; Caird, J. A.; Zhang, H.

2008-08-01

Yb:S-FAP [Yb 3+:Sr 5(PO 4) 3F] crystals are an important gain medium for diode-pumped laser applications. Growth of 7.0 cm diameter Yb:S-FAP crystals utilizing the Czochralski (CZ) method from SrF 2-rich melts often encounters cracks during the post-growth cool-down stage. To suppress cracking during cool-down, a numerical simulation of the growth system was used to understand the correlation between the furnace power during cool-down and the radial temperature differences within the crystal. The critical radial temperature difference, above which the crystal cracks, has been determined by benchmarking the simulation results against experimental observations. Based on this comparison, an optimal three-stage ramp-down profile was implemented, which produced high-quality, crack-free Yb:S-FAP crystals.

Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

DOE PAGES

Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj; ...

2018-03-12

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here in this paper we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection approach, which is now realized in 2D geometry. The method relies on ‘self-selection’ of the fastest-growing domain orientation, which eventually overwhelms themore » slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h -1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.« less

Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here in this paper we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection approach, which is now realized in 2D geometry. The method relies on ‘self-selection’ of the fastest-growing domain orientation, which eventually overwhelms themore » slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h -1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.« less

Stress studies in edge-defined film-fed growth of silicon ribbons

NASA Technical Reports Server (NTRS)

Kalejs, J.

1985-01-01

Stress and efficiency studies on sheet silicon are reported. It was found that the bulk diffusion length of stressed float zone and Czochralski silicon is limited by point defect recombination to about 20 micrometers in dislocation free regions after high temperature heat treatment and stress application. If in-diffusion by iron occurs, dislocations, carbon and oxygen, do not produce significant gettering with annealing. Further work ideas are suggested.

Analytical studies on the crystal melt interface shape in the Czochralski process for oxide single crystals

NASA Astrophysics Data System (ADS)

Jeong, Ja Hoon; Kang, In Seok

2000-09-01

Effects of the operating conditions on the crystal-melt interface shape are analytically investigated for the Czochralski process of the oxide single crystals. The ideas, which were used for the silicon single-crystal growth by Jeong et al. (J. Crystal Growth 177 (1997) 157), are extended to the oxide single-crystal growth problem by considering the internal radiation in the crystal phase and the melt phase heat transfer with the high Prandtl number. The interface shape is approximated in the simplest form as a quadratic function of radial position and an expression for the deviation from the flat interface shape is derived as a function of operating conditions. The radiative heat transfer rate between the interface and the ambient is computed by calculating the view factors for the curved interface shape with the assumption that the crystal phase is completely transparent. For the melt phase, the well-known results from the thermal boundary layer analysis are applied for the asymptotic case of high Prandtl number based on the idea that the flow field near the crystal-melt interface can be modeled as either a uniaxial or a biaxial flow. Through this work, essential information on the interface shape deformation and the effects of operating conditions are brought out for the oxide single-crystal growth.

Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth

NASA Astrophysics Data System (ADS)

Daggolu, Parthiv; Ryu, Jae Woo; Galyukov, Alex; Kondratyev, Alexey

2016-10-01

With the use of 300 mm silicon wafers for industrial semiconductor device manufacturing, the Czochralski (Cz) crystal growth process has to be optimized to achieve higher quality and productivity. Numerical studies based on 2D global thermal models combined with 3D simulation of melt convection are widely used today to save time and money in the process development. Melt convection in large scale Cz Si growth is controlled by a CUSP or transversal magnetic field (MF) to suppress the melt turbulence. MF can be optimized to meet necessary characteristics of the growing crystal, in terms of point defects, as MF affects the melt/crystal interface geometry and allows adjustment of the pulling rate. Among the different knobs associated with the CUSP magnetic field, the nature of its configuration, going from symmetric to asymmetric, is also reported to be an important tool for the control of crystallization front. Using a 3D unsteady model of the CGSim software, we have studied these effects and compared with several experimental results. In addition, physical mechanisms behind these observations are explored through a detailed modeling analysis of the effect of an asymmetric CUSP MF on convection features governing the heat transport in the silicon melt.

Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels. [in gallium arsenide crystals

NASA Technical Reports Server (NTRS)

Skowronski, M.; Lagowski, J.; Gatos, H. C.

1986-01-01

A high-resolution optical study was carried out on GaAs crystals grown by horizontal Bridgman and liquid-encapsulated-Czochralski methods. An excellent correlation was found between the intensity of the 1.039-eV no-phonon line and the characteristic absorption of EL2, the major deep donor level in GaAs. A correlation was also found between the characteristic optical absorption of EL2 and its concentration as determined by junction capacitance measurements. The presence of EL0, another midgap level contained in heavily oxygen-doped crystals at concentration always less than those of EL2, had no effect on the optical spectra, but altered the capacitance measurements. Accordingly, an accurate calibration for the determination of EL2 by optical absorption was obtained from capacitance measurements on crystals containing only EL2; in this way the uncertainties introduced by other midgap levels were eliminated.

Features of changes in electrophysical properties of silicon under the influence of thermal treatment

NASA Astrophysics Data System (ADS)

Gaidar, G. P.; Baranskii, P. I.

2018-06-01

The influence of the annealing temperatures and cooling rates of n-silicon crystals, grown by the Czochralski method and doped with phosphorus impurity, on their electric and thermoelectric properties was studied. In the region of predominantly impurity scattering a more essential dependence of the charge carrier mobility on the cooling conditions of crystals was established in comparison with the dependence on the annealing temperature. The analysis of the measurement results of tensoresistance and tenso-thermo-emf was carried out, on the basis of which the dependence of the anisotropy parameter of drag thermo-emf on the cooling rate was obtained. The feature of the anisotropy parameter of thermo-emf M in the form of its maximal deviation from the linear dependence M = M(lg(υcl)) was revealed in the region of cooling rates from 8 to 15 K/min.

Scintillation properties of Gd3Al2Ga3O12:Ce3+ single crystal scintillators

NASA Astrophysics Data System (ADS)

Sakthong, Ongsa; Chewpraditkul, Weerapong; Wanarak, Chalerm; Kamada, Kei; Yoshikawa, Akira; Prusa, Petr; Nikl, Martin

2014-07-01

The scintillation properties of Gd3Al2Ga3O12:Ce3+ (GAGG:Ce) single crystals grown by the Czochralski method with 1 at% cerium in the melt were investigated and results were compared with so far published results in the literature. The light yield (LY) and energy resolution were measured using a XP5200B photomultiplier. Despite about twice higher LY for GAGG:Ce, the energy resolution is only slightly better than that of LuAG:Ce due to its worse intrinsic resolution and non-proportionality of LY. The LY dependences on the sample thickness and amplifier shaping time were measured. The estimated photofraction in pulse height spectra of 320 and 662 keV γ-rays and the total mass attenuation coefficient at 662 keV γ-rays were also determined and compared with the theoretical ones calculated using the WinXCom program.

Analysis and evaluation of process and equipment in tasks 2 and 4 of the Low Cost Solar Array project

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1978-01-01

Several experimental and projected Czochralski crystal growing process methods were studied and compared to available operations and cost-data of recent production Cz-pulling, in order to elucidate the role of the dominant cost contributing factors. From this analysis, it becomes apparent that substantial cost reductions can be realized from technical advancements which fall into four categories: an increase in furnace productivity; the reduction of crucible cost through use of the crucible for the equivalent of multiple state-of-the-art crystals; the combined effect of several smaller technical improvements; and a carry over effect of the expected availability of semiconductor grade polysilicon at greatly reduced prices. A format for techno-economic analysis of solar cell production processes was developed, called the University of Pennsylvania Process Characterization (UPPC) format. The accumulated Cz process data are presented.

Growth and optical properties of Dy:Y3Al5O12 crystal

NASA Astrophysics Data System (ADS)

Pan, Yuxin; Zhou, Shidong; Li, Dongzhen; Liu, Bin; Song, Qingsong; Liu, Jian; Liu, Peng; Ding, Yuchong; Wang, Xiaodan; Xu, Xiaodong; Xu, Jun

2018-02-01

High optical quality Dy:Y3Al5O12 (Dy:YAG) crystal has been grown by the Czochralski method. Absorption spectra, fluorescence spectra and fluorescence decay curve of Dy:YAG have been recorded at room temperature. The strongest emission of Dy:YAG crystal is near 583 nm, corresponding to the 4F9/2 → 6H13/2 transition. The Judd-Ofelt parameters Ω2, Ω4 and Ω6 were calculated to be 1.49 × 10-20 cm2, 0.94 × 10-20 cm2 and 3.20 × 10-20 cm2, respectively. The radiative transition rates, branching ratios and the emission cross sections were calculated. The fluorescence and radiative lifetimes are 0.40 ms and 1.02 ms, respectively, resulting in a quantum efficiency of 39.2%. The results indicate that the Dy:YAG crystal would be a promising yellow solid state laser material.

Novel solid state lasers for Lidar applications at 2 μm

NASA Astrophysics Data System (ADS)

Della Valle, G.; Galzerano, G.; Toncelli, A.; Tonelli, M.; Laporta, P.

2005-09-01

A review on the results achieved by our group in the development of novel solid-state lasers for Lidar applications at 2 μm is presented. These lasers, based on fluoride crystals (YLF4, BaY2F8, and KYF4) doped with Tm and Ho ions, are characterized by high-efficiency and wide wavelength tunability around 2 μm. Single crystals of LiYF4, BaY2F8, and KYF4 codoped with the same Tm3+ and Ho3+ concentrations were successfully grown by the Czochralski method. The full spectroscopic characterization of the different laser crystals and the comparison between the laser performance are presented. Continuous wave operation was efficiently demonstrated by means of a CW diode-pumping. These oscillators find interesting applications in the field of remote sensing (Lidar and Dial systems) as well as in high-resolution molecular spectroscopy, frequency metrology, and biomedical applications.

Optical spectroscopy of low-phonon Ho3+ doped BaY2F8 single crystal

NASA Astrophysics Data System (ADS)

Li, Chun; Zeng, Fanming; Lin, Hai; Zheng, Dongyang; Yang, Xiaodong; Liu, Wang; Liu, Jinghe

2014-12-01

The Ho:BaY2F8 crystal was grown by Czochralski method. The crystal phase structure and absorption spectra were tested, the absorption peak exists near 899 nm, the absorption cross section was 1.27 × 10-21 cm2. The emission spectra of crystals in the vicinity of 2 and 3.9 μm were measured, the 2 μm near infrared light induced by 5I7 → 5I8 transition of Ho3+ ions was observed, as well as the fluorescence output at 3.9 μm (5I5 → 5I6), emission cross section at 3.9 μm was calculated to be 0.86 × 10-21 cm2. We suppose that the Ho:BaY2F8 crystal has a large application prospect for the 2-4 μm wavelength near infrared laser.

Optimization of the cooling profile to achieve crack-free Yb:S-FAP crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, H; Qiu, S; Kheng, L

Yb:S-FAP [Yb{sup 3+}:Sr{sub 5}(PO{sub 4}){sub 3}F] crystals are an important gain medium for diode-pumped laser applications. Growth of 7.0 cm diameter Yb:S-FAP crystals utilizing the Czochralski (CZ) method from SrF{sub 2}-rich melts often encounter cracks during the post growth cool down stage. To suppress cracking during cool down, a numerical simulation of the growth system was used to understand the correlation between the furnace power during cool down and the radial temperature differences within the crystal. The critical radial temperature difference, above which the crystal cracks, has been determined by benchmarking the simulation results against experimental observations. Based on thismore » comparison, an optimal three-stage ramp-down profile was implemented and produced high quality, crack-free Yb:S-FAP crystals.« less

Perspectives on integrated modeling of transport processes in semiconductor crystal growth

NASA Technical Reports Server (NTRS)

Brown, Robert A.

1992-01-01

The wide range of length and time scales involved in industrial scale solidification processes is demonstrated here by considering the Czochralski process for the growth of large diameter silicon crystals that become the substrate material for modern microelectronic devices. The scales range in time from microseconds to thousands of seconds and in space from microns to meters. The physics and chemistry needed to model processes on these different length scales are reviewed.

Five Bit, Five Gigasample TED Analog-to-Digital Converter Development.

DTIC Science & Technology

1981-06-01

pliers. TRW uses two sources at present: materials grown by Horizontal I Bridgman technique from Crystal Specialties, and Czochralski from MRI. The...the circuit modelling and circuit design tasks. A number of design iterations were required to arrive at a satisfactory design. In or-der to riake...made by modeling the TELD as a voltage-controlled current generator with a built-in time delay between impressed voltage and output current. Based on

Energy Transfer Processes in (Lu,Gd)AlO3:Ce

DTIC Science & Technology

2001-01-01

studies on energy transfer processes in Ce-activated Lu, Y and Gd aluminum perovskite crystals that contribute to production of scintillation light in...LuAIO3, GdA10 3, cerium, scintillators, VUV spectroscopy, luminescence, time profiles, energy transfer 1. INTRODUCTION The yttrium aluminum perovskite...The Czochralski-grown monocrystals of LuAP:Ce were first evaluated in a garnet -free perovskite phase by Lempicki et al. in 1994 .4 More detailed

Applications of novel effects derived from Si ingot growth inside Si melt without contact with crucible wall using noncontact crucible method to high-efficiency solar cells

NASA Astrophysics Data System (ADS)

Nakajima, Kazuo; Ono, Satoshi; Kaneko, Yuzuru; Murai, Ryota; Shirasawa, Katsuhiko; Fukuda, Tetsuo; Takato, Hidetaka; Jensen, Mallory A.; Youssef, Amanda; Looney, Erin E.; Buonassisi, Tonio; Martel, Benoit; Dubois, Sèbastien; Jouini, Anis

2017-06-01

The noncontact crucible (NOC) method was proposed for obtaining Si single bulk crystals with a large diameter and volume using a cast furnace and solar cells with high conversion efficiency and yield. This method has several novel characteristics that originate from its key feature that ingots can be grown inside a Si melt without contact with a crucible wall. Si ingots for solar cells were grown by utilizing the merits resulting from these characteristics. Single ingots with high quality were grown by the NOC method after furnace cleaning, and the minority carrier lifetime was measured to investigate reduction of the number of impurities. A p-type ingot with a convex growth interface in the growth direction was also grown after furnace cleaning. For p-type solar cells prepared using wafers cut from the ingot, the highest and average conversion efficiencies were 19.14% and 19.0%, respectively, which were obtained using the same solar cell structure and process as those employed to obtain a conversion efficiency of 19.1% for a p-type Czochralski (CZ) wafer. Using the cast furnace, solar cells with a conversion efficiency and yield as high as those of CZ solar cells were obtained by the NOC method.

Experimental analysis and modeling of melt growth processes

NASA Astrophysics Data System (ADS)

Müller, Georg

2002-04-01

Melt growth processes provide the basic crystalline materials for many applications. The research and development of crystal growth processes is therefore driven by the demands which arise from these specific applications; however, common goals include an increased uniformity of the relevant crystal properties at the micro- and macro-scale, a decrease of deleterious crystal defects, and an increase of crystal dimensions. As melt growth equipment and experimentation becomes more and more expensive, little room remains for improvements by trial and error procedures. A more successful strategy is to optimize the crystal growth process by a combined use of experimental process analysis and computer modeling. This will be demonstrated in this paper by several examples from the bulk growth of silicon, gallium arsenide, indium phosphide, and calcium fluoride. These examples also involve the most important melt growth techniques, crystal pulling (Czochralski methods) and vertical gradient freeze (Bridgman-type methods). The power and success of the above optimization strategy, however, is not limited only to the given examples but can be generalized and applied to many types of bulk crystal growth.

Luminescent and scintillation properties of Lu3Al5O12:Sc single crystal and single crystalline films

NASA Astrophysics Data System (ADS)

Zorenko, Y.; Gorbenko, V.; Voznyak, T.; Savchyn, V.; Nizhankovskiy, S.; Dan'ko, A.; Puzikov, V.; Laguta, V.; Mares, J. A.; Nikl, M.; Nejezchleb, K.; Batentschuk, M.; Winnacker, A.

2012-10-01

The work is dedicated to growth by the liquid phase epitaxy method and study of the luminescence and scintillation properties of Sc3+ doped single crystalline films (SCF) of Lu3Al5O12 (LuAG) garnet. The scintillation properties of SCF are compared with single crystal (SC) analogues grown by the Horizontal Direct Crystallization and Czochralski methods. We consider the dependence of intensity of the Sc3+ emission in LuAG host on the activator concentration and influence of flux contamination on the light yield (LY) of the Sc3+ luminescence in LuAG:Sc SCF with respect to their SC counterparts and the reference YAP:Ce scintillator. From the NMR investigations of LuAG:Sc SCF we confirm the substitution by Sc3+ ions both the octahedral and dodecahedral positions of LuAG host and formation of the ScAl and ScLu related emission centers, respectively. We also show that the luminescence spectrum in the UV range and decay kinetics of LuAG:Sc SCF can be effectively tuned by changing the scandium content.

Crystal growth and piezoelectric properties of Ca3Ta(Ga0.9Sc0.1)3Si2O14 bulk single crystal

NASA Astrophysics Data System (ADS)

Igarashi, Yu; Yokota, Yuui; Ohashi, Yuji; Inoue, Kenji; Yamaji, Akihiro; Shoji, Yasuhiro; Kamada, Kei; Kurosawa, Shunsuke; Yoshikawa, Akira

2018-03-01

Ca3Ta(Ga0.9Sc0.1)3Si2O14 langasite-type single crystal with a diameter of 1 in. was grown by Czochralski (Cz) method. Obtained crystal had good crystallinity and its lattice constants exceeded those of Ca3TaGa3Si2O14 (CTGS) according to the X-ray analysis. A crack-free specimen cut from the grown crystal was used for the measurements of dielectric constant ε11T/ε0, electromechanical coupling factor k12, and piezoelectric constant d11. The accuracies of these measurements were better than those for the crystal grown by micro-pulling-down (μ-PD) method. Substitution of Ga with Sc resulted modification of these constants in the directions opposite to those observed after partial substitution of Ga (of CTGS) with Al. This suggests that increase of |d14| was most probably associated with enlargement of average size of the Ga sites. The crystal reported here had greater dimensions as compared to analogous crystals grown by the μ-PD method. As a result, accuracy of determination of acoustic constants of this material may be improved.

Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gröschel, A., E-mail: alexander.groeschel@fau.de; Will, J.; Bergmann, C.

Annealed Czochralski Silicon wafers containing SiO{sub x} precipitates have been studied by high energy X-ray diffraction in a defocused Laue setup using a laboratory tungsten tube. The energy dispersive evaluation of the diffracted Bragg intensity of the 220 reflection within the framework of the statistical dynamical theory yields the static Debye-Waller factor E of the crystal, which gives access to the strain induced by the SiO{sub x} precipitates. The results are correlated with precipitate densities and sizes determined from transmission electron microscopy measurements of equivalent wafers. This allows for the determination of the constrained linear misfit ε between precipitate andmore » crystal lattice. For samples with octahedral precipitates the values ranging from ε = 0.39 (+0.28/−0.12) to ε = 0.48 (+0.34/−0.16) indicate that self-interstitials emitted into the matrix during precipitate growth contribute to the lattice strain. In this case, the expected value calculated from literature values is ε = 0.26 ± 0.05. Further, the precise evaluation of Pendellösung oscillations in the diffracted Bragg intensity of as-grown wafers reveals a thermal Debye-Waller parameter for the 220 reflection B{sup 220}(293 K) of 0.5582 ± 0.0039 Å{sup 2} for a structure factor based on spherically symmetric scattering contributions.« less

Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

NASA Astrophysics Data System (ADS)

Liu, Xin; Gao, Bing; Nakano, Satoshi; Kakimoto, Koichi

2017-09-01

Generation, incorporation, and accumulation of carbon (C) were investigated by transient global simulations of heat and mass transport during the melting process of Czochralski silicon (CZ-Si) crystal growth. Contact reaction between the quartz crucible and graphite susceptor was introduced as an extra origin of C contamination. The contribution of the contact reaction on C accumulation is affected by the back diffusion of C monoxide (CO) from the gap between the gas-guide and the crucible. The effect of the gas-guide coating on C reduction was elucidated by taking the reaction between the silicon carbide (SiC) coating and gaseous Si monoxide (SiO) into account. Application of the SiC coating on the gas-guide could effectively reduce the C contamination because of its higher thermochemical stability relative to that of graphite. Gas flow control on the back diffusion of the generated CO was examined by the parametric study of argon gas flow rate. Generation and back diffusion of CO were both effectively suppressed by the increase in the gas flow rate because of the high Péclet number of species transport. Strategies for C content reduction were discussed by analyzing the mechanisms of C accumulation process. According to the elucidated mechanisms of C accumulation, the final C content depends on the growth duration and contamination flux at the gas/melt interface.

Silicon materials task of the low cost solar array project, part 2

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Rai-Choudhury, P.; Blais, P. D.; Mccormick, J. R.

1976-01-01

Purity requirements for solar cell grade silicon material was developed and defined by evaluating the effects of specific impurities and impurity levels on the performance of silicon solar cells. Also, data was generated forming the basis for cost-tradeoff analyses of silicon solar cell material. Growth, evaluation, solar cell fabrication and testing was completed for the baseline boron-doped Czochralski material. Measurements indicate Cn and Mn seriously degrade cell performance, while neither Ni nor Cu produce any serious reduction in cell efficiency.

The Effect of High Pressure - High Temperature Treatment on Neutron Irradiation Induced Defects in Czochralski Silicon

DTIC Science & Technology

2001-01-01

Spectra by the 830cm’ Localized Vibrational Mode (LVM) band. Upon annealing , this defect is converted to the V0 2 defect responsible for a LVM band at...887cmŕ. The purpose of this work is to study the effect of various combinations of HTHP treatment prior to irradiation on the annealing behaviour of...and stacking faults. Keywords: high temperature - high pressure treatments, annealing , neutron irradiation. 1. INTRODUCTION Oxygen is one of the two

The establishment of a production-ready manufacturing process utilizing thin silicon substrates for solar cells

NASA Technical Reports Server (NTRS)

Pryor, R. A.

1980-01-01

Three inch diameter Czochralski silicon substrates sliced directly to 5 mil, 8 mil, and 27 mil thicknesses with wire saw techniques were procured. Processing sequences incorporating either diffusion or ion implantation technologies were employed to produce n+p or n+pp+ solar cell structures. These cells were evaluated for performance, ease of fabrication, and cost effectiveness. It was determined that the use of 7 mil or even 4 mil wafers would provide near term cost reductions for solar cell manufacturers.

The growth of dislocation-free crystals of benzil

NASA Astrophysics Data System (ADS)

Katoh, K.; Kato, N.

1985-11-01

Dislocation-free crystals of benzil have been obtained by repeated Czochralski growth and have been characterized using X-ray diffraction topography. At each stage of growth, the parts containing the defects were etched off and the rest was used for the seed in the next growth. The growth behaviour could be interpreted in connection with the shape of the solid-liquid interface. The double image of the screw dislocation could be explained elementarily and it was concluded that the Burgers vector was c/3.

Impact of interstitial iron on the study of meta-stable B-O defects in Czochralski silicon: Further evidence of a single defect

NASA Astrophysics Data System (ADS)

Kim, Moonyong; Chen, Daniel; Abbott, Malcolm; Nampalli, Nitin; Wenham, Stuart; Stefani, Bruno; Hallam, Brett

2018-04-01

We explore the influence of interstitial iron (Fei) on lifetime spectroscopy of boron-oxygen (B-O) related degradation in p-type Czochralski silicon. Theoretical and experimental evidence presented in this study indicate that iron-boron pair (Fe-B) related reactions could have influenced several key experimental results used to derive theories on the fundamental properties of the B-O defect. Firstly, the presence of Fei can account for higher apparent capture cross-section ratios (k) of approximately 100 observed in previous studies during early stages of B-O related degradation. Secondly, the association of Fe-B pairs can explain the initial stage of a two-stage recovery of carrier lifetime with dark annealing after partial degradation. Thirdly, Fei can result in high apparent k values after the permanent deactivation of B-O defects. Subsequently, we show that a single k value can describe the recombination properties associated with B-O defects throughout degradation, that the recovery during dark annealing occurs with a single-stage, and both the fast- and slow-stage B-O related degradation can be permanently deactivated during illuminated annealing. Accounting for the recombination activity of Fei provides further evidence that the B-O defect is a single defect, rather than two separate defects normally attributed to fast-forming recombination centers and slow-forming recombination centers. Implications of this finding for the nature of the B-O defect are also discussed.

Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

NASA Astrophysics Data System (ADS)

Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

2016-11-01

The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

NASA Astrophysics Data System (ADS)

Londos, C. A.; Sarlis, N. V.; Fytros, L. G.

1998-10-01

This article reports on defect studies of neutron-irradiated Czochralski-grown silicon (Cz-Si) material by means of infrared spectroscopy. In particular, the investigation was focused on the evolution of the 828 cm-1 well-known band of A-center, due to isochronal anneals from room temperature (RT) up to ≈700 °C. The strength of the VO band begins to increase above ≈200 gradually up to 300 °C (stage I); then, it begins to decrease up to ≈400 °C (stage II), where upon it stabilizes up to ≈550 °C (stage III). Upon re-irradiation under exactly the same conditions and repeating the annealing process, the increase of the VO signal in stage I disappears. The phenomenon is ascribed to the existence of defect aggregates labeled as Xi centers which are correlated with (impurity-defect) clusters that compete with Oi in capturing vacancies. The presence of Xi centers is related to the thermal annealings performed. Comparison of the evolution of VO (828 cm-1) and VO2 (887 cm-1) bands between irradiated and re-irradiated materials, during stage II, is made and the results are discussed in the framework of established reaction patterns. The stabilization of the amplitude of the 828 cm-1 line in stage III is examined. The prevailing aspect is that a portion of A-centers in neutron-irradiated Si acquires larger thermal stability by relaxing in the vicinity of larger defects.

Growth and anisotropic thermal properties of biaxial Ho:YAlO3 crystal

NASA Astrophysics Data System (ADS)

Dong, Qin; Zhao, Guangjun; Chen, Jianyu; Ding, Yuchong; Zhao, Chengchun

2010-07-01

Ho:YAlO3 (YAP) crystal with large size and good optical quality has been grown by the Czochralski method. Thermal properties of the as-grown Ho:YAP crystal have been investigated by measuring the temperature-dependent, anisotropic thermal expansion, specific heat, thermal diffusion, and thermal conductivity. The results show that Ho:YAP crystal possesses a large anisotropic thermal expansion and good thermal conductivity. The calculated average thermal expansion coefficients along a, b, and c axis are αa=9.18×10-6/K, αb=1.94×10-6/K, and αc=7.61×10-6/K from 293.15 to 770.15 K. The thermal conductivities along a, b, and c axis are up to 11.6, 9.9, and 12.3 W m-1 K-1 at 298.15 K. Compared with Ho: Y3Al5O12 (YAG), Ho:YAP crystal has a larger thermal conductivity along a axis from 298.15 to 568.15 K.

Crystal growth, polarized spectroscopy and Judd-Ofelt analysis of Tb:YAlO3.

PubMed

Liu, Bin; Shi, Jiaojiao; Wang, Qingguo; Tang, Huili; Liu, Junfang; Zhao, Hengyu; Li, Dongzhen; Liu, Jian; Xu, Xiaodong; Wang, Zhanshan; Xu, Jun

2018-07-05

Tb 3+ -doped YAlO 3 (YAP) single crystal was grown by Czochralski (Cz) method. Based on the polarized absorption spectra, the spectroscopic parameters were calculated to be Ω 2 =3.49×10 -20 cm 2 , Ω 4 =5.87×10 -20 cm 2 and Ω 6 =2.55×10 -20 cm 2 , and then the spontaneous transition rate, fluorescent branching ratio and radiative lifetime of 5 D 4 multiplet were obtained. The yellow emission cross sections of 5 D 4 → 7 F 4 transition were calculated to be 1.72×10 -22 cm 2 , 2.73×10 -22 cm 2 and 2.65×10 -22 cm 2 for a, b and c polarization, respectively. The fluorescence lifetime of the 5 D 4 multiplet was fitted to be 1.72ms. All the data indicate that Tb:YAP crystal is a promising candidate for yellow laser operation. Copyright © 2018. Published by Elsevier B.V.

Overview - Flat-plate technology. [review of Low Cost Solar Array Project

NASA Technical Reports Server (NTRS)

Callaghan, W. T.

1981-01-01

Progress and continuing plans for the joint NASA/DoE program at the JPL to develop the technologies and industrial processes necessary for mass production of low-cost solar arrays (LSA) which produce electricity from solar cells at a cost of less than $0.70/W are reviewed. Attention is given to plans for a demonstration Si refinement plant capable of yielding 1000 MT/yr, and to a CVD process with chlorosilane, which will yield material at a cost of $21/kg. Ingot and shaped-sheet technologies, using either Czochralski growth and film fed growth methods have yielded AM1 15% efficient cells in an automated process. Encapsulation procedures have been lowered to $14/sq m, and robotics have permitted assembled cell production at a rate of 10 sec/cell. Standards are being defined for module safety features. It is noted that construction of a pilot Si purification plant is essential to achieving the 1986 $0.70/W cost goals.

Improvement of minority carrier life time in N-type monocrystalline Si by the Czochralski method

NASA Astrophysics Data System (ADS)

Baik, Sungsun; Pang, Ilsun; Kim, Jaemin; Kim, Kwanghun

2016-07-01

The installation amount of solar power plants increases every year. Multi-crystalline Si solar cells comprise a large share of the market of solar power plants. Multi-crystalline and single-crystalline Si solar cells are competing against one another in the market. Many single-crystalline companies are trying to develop and produce n-type solar cells with higher cell efficiency than that of p-type. In n-type wafers with high cell efficiency, wafer quality has become increasingly important. In order to make ingots with higher MCLT, the effects of both poly types related to metal impurities and pull speeds related to vacancy concentration on minority carrier life time were studied. In the final part of ingots, poly types related to the metal impurities are a dominant factor on MCLT. In the initial part of ingots, pull speeds related to vacancy concentration are a dominant factor on MCLT. [Figure not available: see fulltext.

A Co2+-doped alumina-rich Mg0.4Al2.4O4 spinel crystal as saturable absorber for a LD pumped Er: glass microchip laser at 1535 nm

NASA Astrophysics Data System (ADS)

Jiang, D. P.; Zou, Y. Q.; Su, L. B.; Tang, H. L.; Wu, F.; Zheng, L. H.; Li, H. J.; Xu, J.

2011-05-01

Co2+-doped Mg0.4Al2.4O4 single crystal up to varnothing28×40 mm3 was successfully grown by the Czochralski method. By using this crystal as saturable absorber, we have demonstrated a diode-end-pumped passively Q-switched Er:glass microchip laser operating at 1535 nm for the first time to the best of our knowledge. The dependences of average output power, repetition rate and pulse energy on the incident pump power were investigated. In the passive Q-switching regime, a maximum average output power of 22.12 mW was obtained at the incident pump power of 410 mW. The narrowest pulse width, the largest pulse energy and the highest peak power were obtained to be about 3.5 ns, 4.8 μJ, and 1.37 kW, respectively.

Spectroscopic properties of heavily Ho3+-doped barium yttrium fluoride crystals

NASA Astrophysics Data System (ADS)

Ji, En-Cai; Liu, Qiang; Nie, Ming-Ming; Luo, Hui; Hu, Yu-Xi; Guan, Zhou-Guo; Gong, Ma-Li

2015-09-01

The 30 at.% Ho: BaY2F8 crystals were grown by the Czochralski method, and their spectroscopic properties are analyzed systematically by standard Judd-Ofelt theory. The Judd-Ofelt intensity parameters are estimated to be Ω2 = 6.74 × 10-20 cm2, Ω4 = 1.20 × 10-20 cm2, and Ω6 = 0.66 × 10-20 cm2, and the fluorescence branching ratios and radiative lifetimes for a series of excited state manifolds are also determined. The emission cross sections with our measured infrared luminescence spectra, especially important for 4.1 μm, are calculated to be about 4.37 × 10-21 cm2. The crystal quality is preliminarily tested through a mid-infrared laser emission experiment. Project supported by the National Natural Science Foundation of China (Grant No. 61275146), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120002110066), and the Special Program of the Co-construction with Beijing Municipal Government of China (Grant No. 20121000302).

Growth and performance research of Tb3Ga5O12 magneto-optical crystal

NASA Astrophysics Data System (ADS)

Jin, Weizhao; Ding, Jingxin; Guo, Li; Gu, Qi; Li, Chun; Su, Liangbi; Wu, Anhua; Zeng, Fanming

2018-02-01

Tb3Ga5O12 (TGG) crystal was grown successfully by the Czochralski method in an iridium crucible with radio frequency (RF)-induced heating under high purity 80%N2 + 20% CO2 atmosphere. None impurity peaks could be found in the XRD patterns compared to standard cards of TGG. Transmittance spectrum was investigated in the visible-near infrared region (VIS-NIR) at room temperature, which indicated the TGG crystal had high transmittance at 500-1100 nm. The Faraday rotations, Verdet constants and magnetic susceptibility of (1 1 1), (1 0 0), (1 1 0) of as-grown crystal have been discussed in detail confirming that Faraday effects of the TGG crystals are anisotropic which is related with magnetic susceptibility, and the Faraday effects of [1 1 1] have been proved to be the best, and the Verdet constants of [1 1 1] was also investigated at different wavelength at room temperature. The thermal conductivity and laser induced damage threshold of the crystal were also analyzed in detailed.

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

NASA Astrophysics Data System (ADS)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1993-04-01

The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

NASA Technical Reports Server (NTRS)

Spitzer, M. B.

1983-01-01

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

A novel magneto-optical crystal Yb:TbVO4

NASA Astrophysics Data System (ADS)

Zhu, Xianchao; Tu, Heng; Hu, Zhanggui

2018-04-01

Highly transparent Yb:TbVO4 single crystal with dimensions of Ø27 × 41 mm3 alomost without scattering defects has been successfully grown by Czochralski technique. The spectra, thermal properties and laser-induced damage threshold were investigated in detailed. The Faraday rotation (FR) measurement was carried out by means of extinction method. The Verdet constant comes up to 80 rad m-1 T-1 at 1064 nm, significantly larger than TbVO4 (58 rad m-1 T-1) and TGG (40 rad m-1 T-1) reported. Meanwhile, the as-grown crystal presents lower absorption coefficient and higher magneto-optical figure of merit at measured wavelength in comparison with TGG. Moreover, the crystal exhibits a substantially improved extinction ratio (42 dB) in contrast with TbVO4 (29 dB), and exceeds the highest value of TGG (40 dB). These advantages make Yb:TbVO4 a highly promising magneto-optical material candidate for optical isolators in the visible-near infrared region.

Li+, Na+ and K+ co-doping effects on scintillation properties of Ce:Gd3Ga3Al2O12 single crystals

NASA Astrophysics Data System (ADS)

Yoshino, Masao; Kamada, Kei; Kochurikhin, Vladimir V.; Ivanov, Mikhail; Nikl, Martin; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Shoji, Yasuhiro; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

2018-06-01

Ce0.5%: Ce:Gd3Ga3Al2O12(GGAG) single crystals co-doped with 500at.ppm Li+, Na+ and K+ were grown by using the micro-pulling down method. The smooth Ce4+ charge transfer absorption below 350 nm and decay time acceleration were observed in Li co-doped sample. Na+ and K+ co-doping did not show a large effect on the acceleration of decay time compared with Li co-doping. Ce0.5%:GGAG single crystals co-doped with 500 at.ppm Li+ were also grown by the Czochralski method. Optical, scintillation properties and timing performance were evaluated to investigate the effect of univalent alkali metal ions co-doping on Ce:GGAG scintillators. The scintillation decay curves were accelerated by Li co-doping: the decay time was significantly accelerated to 54.8 ns (47%) for the faster component and 158 ns (53%) for the slower component. The light output was 94% of the non co-doped Ce:GGAG standard. The coincidence time resolution was improved to 258 ps by Li co-doping.

Crystal-Physical Model of Ion Transport in Nonlinear Optical Crystals of KTiOPO4

NASA Astrophysics Data System (ADS)

Sorokin, N. I.; Shaldin, Yu. V.

2018-04-01

The ionic conductivity along the principal axes a, b, and c of the unit cell of the nonlinear-optical high-resistance KTiOPO4 single crystals (rhombic syngony, space group Pna21), which are as-grown and after thermal annealing in vacuum, has been investigated by the method of impedance spectroscopy. The crystals were grown from a solution-melt by the Czochralski method. The as-grown KTiOPO4 crystals possess a quasi-one-dimensional conductivity along the crystallographic c axis, which is caused by the migration of K+ cations: σ║ c = 1.0 × 10-5 S/cm at 573 K. Wherein the characteristics of the anisotropy of ionic conductivity of the crystals is equal to σ║ c /σ║ a = 3 and σ║ c /σ║ b = 24. The thermal annealing at 1000 K for 10 h in vacuum increases the magnitude of σ║ c of KTiOPO4 by a factor of 28 and leads to an increase in the ratio σ║ c /σ║ b = 2.1 × 103 at 573 K. A crystal-physical model of ionic transport in KTiOPO4 crystals has been proposed.

Growth and spectral properties of Tm:BaY2F8 crystals with different Tm3+ concentration

NASA Astrophysics Data System (ADS)

Liu, Wang; Li, Chun; Xu, Jialin; Zhou, Yao; Xie, Huishuang; Gao, Meiling; Yin, Ru; Zheng, Dongyang; Lin, Hai; Liu, Jinghe; Zeng, Fanming

2016-01-01

Tm3+:BaY2F8 (Tm:BYF) laser crystals with different doping concentrations were successfully grown by Czochralski method. The optimal growth parameters obtained are as follows: the pulling rate is 0.5 mm/h; the rotation speed is 5 rpm; the cooling rate is 10°C/h. Phase composition, absorption spectra, and fluorescence properties of crystals were studied by XRD and spectral methods. XRD analysis indicates that the crystal belongs to monoclinic system with the C2/ m space group. The lattice parameters were calculated and the anisotropy of the crystals was studied, confirming that the a axis is the best growth direction. The absorption peaks around 790 nm became larger with increase of Tm3+ concentration. The cross section of 15% Tm:BYF crystal around 791 nm is 9.47 × 10-21 cm2. The 10% Tm:BYF crystal has the strongest emission peak around 1879.6 nm with the FWHM of 79 nm and the emission cross-section of 2.13 × 10-21 cm2, which is favorable for the 1.88 μm laser output.

Depletion of interstitial oxygen in silicon and the thermal donor model

NASA Technical Reports Server (NTRS)

Borenstein, Jeffrey T.; Singh, Vijay A.; Corbett, James W.

1987-01-01

It is shown here that the experimental results of Newman (1985) and Tan et al. (1986) regarding the loss of oxygen interstitials during 450 C annealing of Czochralski silicon are consistent with the recently proposed model of Borenstein, Peak, and Corbett (1986) for thermal donor formation. Calculations were carried out for TD cores corresponding to O2, O3, O4, and/or O5 clusters. A simple model which attempts to capture the essential physics of the interstitial depletion has been constructed, and is briefly described.

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy

NASA Technical Reports Server (NTRS)

Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

1989-01-01

An attempt is made to improve device efficiencies by depositing indium tin oxide onto epitaxially grown p-InP on p(+)-InP substrates. This leads to a reduction in the device series resistance, high-quality reproducible surfaces, and an improvement in the transport properties of the base layer. Moreover, many of the facets associated with badly characterized bulk liquid encapsulated Czochralski substrates used in previous investigations are removed in this way.

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

1987-01-01

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

Electrical and Structural Characterization of Web Dendrite Crystals

NASA Technical Reports Server (NTRS)

Schwuttke, G. H.; Koliwad, K.; Dumas, K. A.

1985-01-01

Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.

Process research of non-Czochralski silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1986-01-01

Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

Development of advanced Czochralski growth process to produce low-cost 150 kG silicon ingots from a single crucible for technology readiness

NASA Technical Reports Server (NTRS)

1981-01-01

The modified CG2000 crystal grower construction, installation, and machine check out was completed. The process development check out proceeded with several dry runs and one growth run. Several machine calibrations and functional problems were discovered and corrected. Exhaust gas analysis system alternatives were evaluated and an integrated system approved and ordered. Several growth runs on a development CG2000 RC grower show that complete neck, crown, and body automated growth can be achieved with only one operator input.

10 CFR 963.16 - Postclosure suitability evaluation method.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 10 Energy 4 2014-01-01 2014-01-01 false Postclosure suitability evaluation method. 963.16 Section... Determination, Methods, and Criteria § 963.16 Postclosure suitability evaluation method. (a) DOE will evaluate postclosure suitability using the total system performance assessment method. DOE will conduct a total system...

10 CFR 963.16 - Postclosure suitability evaluation method.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 10 Energy 4 2011-01-01 2011-01-01 false Postclosure suitability evaluation method. 963.16 Section... Determination, Methods, and Criteria § 963.16 Postclosure suitability evaluation method. (a) DOE will evaluate postclosure suitability using the total system performance assessment method. DOE will conduct a total system...

10 CFR 963.16 - Postclosure suitability evaluation method.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 10 Energy 4 2012-01-01 2012-01-01 false Postclosure suitability evaluation method. 963.16 Section... Determination, Methods, and Criteria § 963.16 Postclosure suitability evaluation method. (a) DOE will evaluate postclosure suitability using the total system performance assessment method. DOE will conduct a total system...

Reference-material system for estimating health and environmental risks of selected material cycles and energy systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crowther, M.A.; Moskowitz, P.D.

1981-07-01

Sample analyses and detailed documentation are presented for a Reference Material System (RMS) to estimate health and environmental risks of different material cycles and energy systems. Data inputs described include: end-use material demands, efficiency coefficients, environmental emission coefficients, fuel demand coefficients, labor productivity estimates, and occupational health and safety coefficients. Application of this model permits analysts to estimate fuel use (e.g., Btu), occupational risk (e.g., fatalities), and environmental emissions (e.g., sulfur oxide) for specific material trajectories or complete energy systems. Model uncertainty is quantitatively defined by presenting a range of estimates for each data input. Systematic uncertainty not quantified relatesmore » to the boundaries chosen for analysis and reference system specification. Although the RMS can be used to analyze material system impacts for many different energy technologies, it was specifically used to examine the health and environmental risks of producing the following four types of photovoltaic devices: silicon n/p single-crystal cells produced by a Czochralski process; silicon metal/insulator/semiconductor (MIS) cells produced by a ribbon-growing process; cadmium sulfide/copper sulfide backwall cells produced by a spray deposition process; and gallium arsenide cells with 500X concentrator produced by a modified Czochralski process. Emission coefficients for particulates, sulfur dioxide and nitrogen dioxide; solid waste; total suspended solids in water; and, where applicable, air and solid waste residuals for arsenic, cadmium, gallium, and silicon are examined and presented. Where data are available the coefficients for particulates, sulfur oxides, and nitrogen oxides include both process and on-site fuel-burning emissions.« less

Structural and photoluminescence studies on europium-doped lithium tetraborate (Eu:Li2B4O7) single crystal grown by microtube Czochralski (μT-Cz) technique

NASA Astrophysics Data System (ADS)

A, Kumaresh; R, Arun Kumar; N, Ravikumar; U, Madhusoodanan; B, S. Panigrahi; K, Marimuthu; M, Anuradha

2016-05-01

Rare earth europium (Eu3+)-doped lithium tetraborate (Eu:Li2B4O7) crystal is grown from its stoichiometric melt by microtube Czochralski pulling technique (μT-Cz) for the first time. The grown crystals are subjected to powder x-ray diffraction (PXRD) analysis which reveals the tetragonal crystal structure of the crystals. UV-vis-NIR spectral analysis is carried out to study the optical characteristics of the grown crystals. The crystal is transparent in the entire visible region, and the lower cutoff is observed to be at 304 nm. The existence of BO3 and BO4 bonding structure and the molecular associations are analyzed by Fourier transform infrared (FTIR) spectroscopy. The results of excitation and emission-photoluminescence spectra of europium ion incorporated in lithium tetraborate (LTB) single crystal reveal that the observations of peaks at 258, 297, and 318 nm in the excitation spectra and peaks at 579, 591, 597, 613, and 651 nm are observed in the emission spectra. The chromaticity coordinates are calculated from the emission spectra, and the emission intensity of the grown crystal is characterized through a CIE 1931 (Commission International d’Eclairage) color chromaticity diagram. Project supported by the Department of Science and Technology-Science and Engineering Research Board (Grant No. SR/S2/LOP-0012/2011), the Government of India for Awarding Major Research Project, the University Grants Commission-Department of Atomic Research-Consortium for Scientific Research (Grant No. CSR-KN/CSR-63/2014-2015/503), and the Kalpakkam and Indore, India.

Role of substrate quality on IC performance and yields

NASA Technical Reports Server (NTRS)

Thomas, R. N.

1981-01-01

The development of silicon and gallium arsenide crystal growth for the production of large diameter substrates are discussed. Large area substrates of significantly improved compositional purity, dopant distribution and structural perfection on a microscopic as well as macroscopic scale are important requirements. The exploratory use of magnetic fields to suppress convection effects in Czochralski crystal growth is addressed. The growth of large crystals in space appears impractical at present however the efforts to improve substrate quality could benefit from the experiences gained in smaller scale growth experiments conducted in the zero gravity environment of space.

Photoluminescence due to early stage of oxygen precipitation in multicrystalline Si for solar cells

NASA Astrophysics Data System (ADS)

Higuchi, Fumito; Tajima, Michio; Ogura, Atsushi

2017-07-01

To analyze the early stage of oxygen precipitation in n-type multicrytalline Si, the spectral change of photoluminescence (PL) induced by thermal treatment at 450-650 °C was investigated in relation to the changes in excess donor and interstitial oxygen concentrations. We observed the characteristic PL bands in the near-band-edge region and sharp lines in the deep-level region in correspondence with the generation of thermal donors and new donors. The observed PL spectral variation is essentially the same as that in Czochralski-grown Si annealed at 450-650 °C.

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

NASA Technical Reports Server (NTRS)

Fonash, S. J.; Sigh, R.; Mu, H. C.

1986-01-01

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAs

NASA Technical Reports Server (NTRS)

Walukiewicz, W.; Lagowski, J.; Gatos, H. C.

1983-01-01

A practical procedure for the evaluation of the Fermi energy in semi-insulating (SI)GaAs from electrical measurements is presented. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near-infrared absorption measurements, to SIGaAs. Employing this procedure, it is shown that the EL2 concentration in Czochralski-grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p-type crystals) rather than abruptly as previously proposed.

Single Crystal Growth of URu 2Si 2 by the Modified Bridgman Technique

DOE PAGES

Gallagher, Andrew; Nelson, William L.; Chen, Kuan Wen; ...

2016-10-02

We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu 2Si 2 and its nonmagnetic analogue ThRu 2Si 2. Bulk thermodynamic and electrical transport measurements show that the properties of crystals produced in this way are comparable to those previously synthesized using the Czochralski or conventional molten metal flux growth techniques. For the specimens reported here, we find residual resistivity ratios RRR = ρ 300K / ρ 0 as large as 116 and 187 for URu 2Si 2 and ThRu 2Si 2, respectively.

Measurement of the minority carrier diffusion length and edge surface-recombination velocity in InP

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Hakimzadeh, Roshanak

1993-01-01

A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion length (L(sub n)) and the edge surface-recombination velocity (V(sub s)) in zinc-doped Czochralski-grown InP wafers. Electron-beam-induced current (EBIC) profiles were obtained in specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure V(sub s), and these values were used in a theoretical expression for normalized EBIC. A fit of the experimental data with this expression enabled us to determine L(sub n).

Investigations into B-O defect formation-dissociation in CZ-silicon and their effect on solar cell performance

NASA Astrophysics Data System (ADS)

Basnyat, Prakash M.

About 30% of the total market share of industrial manufacture of silicon solar cells is taken by single crystalline Czochralski (CZ) grown wafers. The efficiency of solar cells fabricated on boron-doped Czochralski silicon degrades due to the formation of metastable defects when excess electrons are created by illumination or minority carrier injection during forward bias. The recombination path can be removed by annealing the cell at about 200° C but recombination returns on exposure to light. Several mono-crystalline and multi-crystalline solar cells have been characterized by methods such as laser beam induced current (LBIC), Four-Probe electrical resistivity etc. to better understand the light induced degradation (LID) effect in silicon solar cells. All the measurements are performed as a function of light soaking time. Annealed states are produced by exposing the cells/wafer to temperature above 200° C for 30 minutes and light soaked state was produced by exposure to 1000 W/m2 light using AM1.5 solar simulator for 72 hours. Dark I-V data are analyzed by a software developed at NREL. This study shows that LID, typically, has two components- a bulk component that arises from boron-oxygen defects and a surface component that appears to be due to the SiNx:H-Si interface. With the analysis of dark saturation current (J02), it is seen that the surface LID increases with an increase in the q/2kT component. Results show that cell performance due to bulk effect is fully recovered upon annealing where as surface LID does not recover fully. This statement is also verified by the study of mc- silicon solar cells. Multi-crystalline silicon solar cell has very low oxygen content and, therefore, recombination sites will not be able to form. This shows that there is no bulk degradation in mc- Si solar cells but they exhibit surface degradation. The results suggest that a typical Cz-silicon solar cell with an initial efficiency of ˜18% could suffer a reduction in efficiency to ˜ 17.5% after the formation of a metastable defect, out of which ˜ 0.4% comes from a bulk effect and ˜0.1% is linked to a surface effect.

Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

NASA Astrophysics Data System (ADS)

Wang, Chenlei

The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to control the solidification interface of Cz system by adjusting heater powers. For the EFG system, parametric studies are performed to discuss the effect of several growth parameters including window opening size, argon gas flow rate and growth thermal environment on the temperature distribution, silicon tube thickness and pulling rate. Two local models are developed and integrated with the global model to investigate the detailed transport phenomena in a small region around the solidification interface including silicon crystal, silicon melt, free surface, liquid-solid interface and graphite die design. Different convection forms are taken into consideration.

Growth and laser properties of Nd:Ca 4YO(BO 3) 3 crystal

NASA Astrophysics Data System (ADS)

Zhang, H. J.; Meng, X. L.; Zhu, L.; Wang, C. Q.; Cheng, R. P.; Yu, W. T.; Zhang, S. J.; Sun, L. K.; Chow, Y. T.; Zhang, W. L.; Wang, H.; Wong, K. S.

1999-02-01

Nd:Ca 4YO(BO 3) 3 (Nd:YCOB) crystal was grown by the Czochralski method, and its structure was measured by using a four circle X-ray diffractometer. The transparent spectrum from 200 to 2600 nm was measured at room temperature. The fluorescence spectrum near 1.06 μm showed that the main emission wavelength of Nd:YCOB crystal was centered at 1060.8 nm. Laser output at 1.06 μm has been demonstrated when it was pumped by a Ti:sapphire laser at the wavelength of 794 nm, the highest output power was 68 mW under pumping power of 311 mW, the pumping threshold was 163 mW and slope efficiency was 46.9%. The self-frequency doubled green light has been observed when it was pumped by a Ti:sapphire or a laser diode (LD). A 14.5 mm Nd:YCOB crystal sample cut at ( θ, φ)=(90°, 33°) was used for type I second-frequency generation (SHG) of the 1.06 μm laser pulse. The SHG conversion efficiency was 22%.

High output power of differently cut Nd:MgO:LiTaO3 CW lasers

NASA Astrophysics Data System (ADS)

Sun, D. H.; Liu, S. D.; Wang, D. Z.; Sang, Y. H.; Kang, X. L.; Liu, H.; Bi, Y.; Yan, B. X.; He, J. L.; Wang, J. Y.

2013-04-01

A high-quality Nd3+ and Mg2+ co-doped LiTaO3 (Nd:MgO:LT) crystal was grown by the Czochralski method. The polarized absorption spectra and fluorescence spectra were studied, and the absorption cross section was calculated by Judd-Ofelt (J-O) theory. The laser performance with different sample cuts of the crystal was investigated for the first time, and it was found that Nd:MgO:LT crystal with different cutting directions (a and c) exhibits different laser properties. By optimizing a partial reflectivity mirror in the laser experimental setting, a high continuous wave output power of 3.58 W was obtained at 1092 and 1076 nm with an optical-to-optical conversion efficiency of 22.78% and slope efficiency of 26.06%. The results indicate that Nd:MgO:LT crystal is a promising candidate for the manufacture of Nd3+ doped periodically poled MgO:LiTaO3 crystal (Nd:PPMgOLT), which should have considerable applications in self-frequency doubling and optical parametric oscillation laser devices.

The Surface Structure of Ground Metal Crystals

NASA Technical Reports Server (NTRS)

Boas, W.; Schmid, E.

1944-01-01

The changes produced on metallic surfaces as a result of grinding and polishing are not as yet fully understood. Undoubtedly there is some more or less marked change in the crystal structure, at least, in the top layer. Hereby a diffusion of separated crystal particles may be involved, or, on plastic material, the formation of a layer in greatly deformed state, with possible recrystallization in certain conditions. Czochralski verified the existence of such a layer on tin micro-sections by successive observations of the texture after repeated etching; while Thomassen established, roentgenographically by means of the Debye-Scherrer method, the existence of diffused crystal fractions on the surface of ground and polished tin bars, which he had already observed after turning (on the lathe). (Thickness of this layer - 0.07 mm). Whether this layer borders direct on the undamaged base material or whether deformed intermediate layers form the transition, nothing is known. One observation ty Sachs and Shoji simply states that after the turning of an alpha-brass crystal the disturbance starting from the surface, penetrates fairly deep (approx. 1 mm) into the crystal (proof by recrystallization at 750 C).

Growth and luminescent properties of Yb:YAG and Ca co-doped Yb:YAG ultrafast scintillation crystals

NASA Astrophysics Data System (ADS)

Zhu, Maodong; Qi, Hongji; Pan, Mingyan; Hou, Qing; Jiang, Benxue; Jin, Yaxue; Han, Hetong; Song, Zhaohui; Zhang, Hui

2018-05-01

In this work, Yb-doped Y3Al5O12 [yttrium aluminum garnet (YAG)] crystals and Ca co-doped Yb:YAG crystals were grown by the Czochralski (CZ) method. The chemical formulas of the two crystals are (Yb0.1Y0.9)3Al5O12 and (Ca0.001Yb0.1Y0.899)3Al5O12, respectively. The structural, optical and luminescent properties of the Yb:YAG and Ca, Yb:YAG crystals were investigated by X-ray rocking curve, X-ray diffraction, Raman spectra, UV-Visble-NIR absorption spectra and X-ray fluorescence. X-ray fluorescence spectrum with two emission peaks at 330 nm and 490 nm were observed in the two kinds of crystals, which would increase slightly after the annealing. Comparing to the Yb:YAG crystal, Ca co-doped Yb:YAG crystal behaved the better luminescent intensity without changing the crystal structure and vibrational modes. This indicates that by doping Ca2+ in Yb:YAG crystal may be an appropriate way to enhance the luminescent property of the scintillation crystal.

Mechanical grooving effect on the gettering efficiency of crystalline silicon based solar cells

NASA Astrophysics Data System (ADS)

Zarroug, Ahmed; Hamed, Zied Ben; Derbali, Lotfi; Ezzaouia, Hatem

2017-04-01

This paper examines a gettering process of Czochralski silicon (CZ) via mechanical texture, followed by two step heat treatment in the presence of porous silicon layer (PSL) under oxygen flow gas. It is shown that a process with PS has a positive trend of improvement in the electronic quality, and found to be more efficient when used in combination with mechanical grooving. We obtained a significant increase of the effective minority carrier lifetime and majority charge carriers mobility. Thus, there is an apparent decrease in the resistivity. These parameters were estimated through a The Quasi-Steady-State Photo-Conductance technique (QSSPC), the van Der Pauw method and Hall Effect. Particularly, we have made obvious that the large enhancement of the electronic quality of the wafers can be related to the presence of grooves, the influence during which the gettering process is of importance to overcome the unexpected saturation phenomena. The current voltage I-V characteristics of all samples had been measured under illumination. They were shown to enhance the photovoltaic properties of solar cells.

Cooperative down-conversion of UV light in disordered scheelitelike Yb-doped NaGd(MoO4)2 and NaLa(MoO4)2 crystals

NASA Astrophysics Data System (ADS)

Subbotin, K. A.; Osipova, Yu. N.; Lis, D. A.; Smirnov, V. A.; Zharikov, E. V.; Shcherbakov, I. A.

2017-07-01

Concentration series of disordered scheelitelike Yb:NaGd(MoO4)2 and Yb:NaLa(MoO4)2 single crystals are grown by the Czochralski method. The actual concentrations of Yb3+ ions in the crystals are determined by optical-absorption spectroscopy. The luminescence of Yb3+ ions in these crystals in the region of 1 μm is studied under UV and IR excitation. In the case of UV excitation, this luminescence appears as a result of nonradiative excited state energy transfer from donor centers of unknown nature to ytterbium. The character of the concentration dependence of Yb3+ luminescence indicates that the energy transfer at high Yb concentrations occurs with active participation of a cooperative mechanism, according to which the excitation energy of one donor center is transferred simultaneously to two Yb3+ ions. In other words, the quantum yield of this transfer exceeds unity, which can be used to increase the efficiency of crystalline silicon (c-Si) solar cells.

Role of Er3+ concentration in spectroscopic and laser performance of CaYAlO4 crystal

NASA Astrophysics Data System (ADS)

Lv, Shaozhen; Wang, Yan; Zhu, Zhaojie; You, Zhenyu; Li, Jianfu; Wang, Hongyan; Tu, Chaoyang

2015-04-01

Three heavily Er3+-doped CaYAlO4 single crystals were successfully grown by Czochralski method. The emission spectra and the fluorescence decay curves have been recorded at room temperature. A combination of experimental data, rate equation and Dexter theory are used to investigate the influence of Er3+ doping concentration on the spectra character and the inner cross relaxation of Er3+:CaYAlO4 crystal. Results show that the self terminate effect of the transition 4I11/2 → 4I13/2 can be suppressed by heavy Er3+doping. But if the doping concentration goes too high, the much larger cross relaxation coefficient of 4I11/2 level than that of 4I13/2 level would results in the increase of up-conversion emission and the quench of near and mid infrared emission. The laser performance was also studied. The maximum output power of 225 mW at 2733 nm was acquired with an optical conversion efficiency of 14.9%.

Single crystal growth and nonlinear optical properties of Nd3+ doped STGS crystal for self-frequency-doubling application

NASA Astrophysics Data System (ADS)

Chen, Feifei; Wang, Lijuan; Wang, Xinle; Cheng, Xiufeng; Yu, Fapeng; Wang, Zhengping; Zhao, Xian

2017-11-01

The self-frequency-doubling crystal is an important kind of multi-functional crystal materials. In this work, Nd3+ doped Sr3TaGa3Si2O14 (Nd:STGS) single crystals were successfully grown by using Czochralski pulling method, in addition, the nonlinear and laser-frequency-doubling properties of Nd:STGS crystals were studied. The continuous-wave laser at 1064 nm was demonstrated along different physical axes, where the maximum output power was obtained to be 295 mW for the Z-cut samples, much higher than the Y-cut (242 mW) and X-cut (217 mW) samples. Based on the measured refractive indexes, the phase matching directions were discussed and determined for type I (42.5°, 30°) and type II (69.5°, 0°) crystal cuts. As expected, self-frequency-doubling green laser at 529 nm was achieved with output powers being around 16 mW and 12 mW for type I and type II configurations, respectively.

Wide gap, permanent magnet biased magnetic bearing system

NASA Technical Reports Server (NTRS)

Boden, Karl

1992-01-01

The unique features and applications of the presented electrical permanent magnetic bearing system essentially result from three facts: (1) the only bearing rotor components are nonlaminated ferromagnetic steel collars or cylinders; (2) all radial and axial forces are transmitted via radial gaps; and (3) large radial bearing gaps can be provided with minimum electric power consumption. The large gaps allow for effective encapsulation and shielding of the rotors at elevated or low temperatures, corrosive or ultra clean atmosphere or vacuum or high pressure environment. Two significant applications are described: (1) a magnetically suspended x ray rotary anode was operated under high vacuum conditions at 100 KV anode potential, 600 C temperature at the rotor collars and speed 18000 rpm with 13 mm radial bearing gap; and (2) an improved Czochralski type crystal growth apparatus using the hot wall method for pulling GaAs single crystals of low dislocation density. Both crystal and crucible are carried and transported by magnetically suspended shafts inside a hermetically sealed housing at 800 C shaft and wall temperature. The radial magnetic bearing gap measures 24 mm.

A new promising nonlinear optical (NLO) crystal for visible and ultraviolet (UV) regions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gheorghe, L.; Achim, A.; Voicu, F.

Different La{sub 1−x}Gd{sub x}Sc{sub 3}(BO{sub 3}){sub 4} compounds with 0 ≤ x ≤ 0.5 were synthesized by solid-state reaction method. The X-ray diffraction studies revealed that the compounds containing more than 30 at.% Gd{sup 3+} ions have non-centrosymmetric trigonal structure (space group R32) and, consequently they are optically nonlinear. A crystal of La{sub x}Gd{sub y}Sc{sub z}(BO{sub 3}){sub 4} (x+y+z = 4) – LGSB with La{sub 0.75}Gd{sub 0.5}Sc{sub 2.75}(BO{sub 3}){sub 4} starting melt composition and relatively small dimensions (about 10 mm in diameter and 25 mm in length) was grown by the Czochralski method. In order to confirm the NLO property, the as-grownmore » crystal was subjected to second-harmonic generation (SHG) test. The nonlinear coefficient d{sub 11} of LGSB crystal has been preliminary estimated to be about 1.9 pm/V, which is larger than that of YAl{sub 3}(BO{sub 3}){sub 4} (YAB) crystal. This article has been formally retracted, please refer to the article PDF for the full retraction notice.« less

Genesis Solar Wind Collector Cleaning Assessment: Update on 60336 Sample Case Study

NASA Technical Reports Server (NTRS)

Goreva, Y. S.; Allums, K. K.; Gonzalez, C. P.; Jurewicz, A. J.; Burnett, D. S.; Allton, J. H.; Kuhlman, K. R.; Woolum, D.

2015-01-01

To maximize the scientific return of Genesis Solar Wind return mission it is necessary to characterize and remove a crash-derived particle and thin film surface contamination. A small subset of Genesis mission collector fragments are being subjected to extensive study via various techniques. Here we present an update on the sample 60336, a Czochralski silicon (Si-CZ) based wafer from the bulk array (B/C). This sample has undergone multiple cleaning steps (see the table below): UPW spin wash, aggressive chemical cleanings (including aqua regia, hot xylene and RCA1), as well as optical and chemical (EDS, ToF-SIMS) imaging. Contamination appeared on the surface of 60336 after the initial 2007 UPW cleaning. Aqua regia and hot xylene treatment (8/13/2013) did little to remove contaminants. The sample was UPW cleaned for the third time and imaged (9/16/13). The UPW removed the dark stains that were visible on the sample. However, some features, like "the Flounder" (a large, 100 micron feature in Fig. 1b) appeared largely intact, resisting all previous cleaning efforts. These features were likely from mobilized adhesive, derived from the Post-It notes used to stabilize samples for transport from Utah after the hard landing. To remove this contamination, an RCA step 1 organic cleaning (RCA1) was employed. Although we are still uncertain on the nature of the Flounder and why it is resistant to UPW and aqua regia/hot xylene treatment, we have found RCA1 to be suitable for its removal. It is likely that the glue from sticky pads used during collector recovery may have been a source for resistant organic contamination [9]; however [8] shows that UPW reaction with crash-derived organic contamination does not make particle removal more difficult.

Growth, improved thermal stability and spectral properties of Yb3+-ions doped high temperature phase α-Ba3Gd(BO3)3 crystals co-doped by Sr2+, Ca2+ and La3+ ions

NASA Astrophysics Data System (ADS)

Pan, Shangke; Zhang, Jianyu; Pan, Jianguo

2018-02-01

To investigate the cause of the thermal instability of Yb3+-ions doped Ba3Gd(BO3)3 crystal grown from Czochralski technique, the low temperature phase β-Ba3Gd(BO3)3 powder was synthesized at the temperature of 800 °C. To inhibit the phase transition of high temperature phase Yb:α-Ba3Gd(BO3)3 during the crystal growth process, co-doping ions Sr2+, Ca2+ and La3+ ions were introduced in Yb:α-Ba3Gd(BO3)3 crystal. The melting point increased and the thermal stability of Yb:α-Ba3Gd(BO3)3 crystal was improved by co-doping ions. The absorption peaks of co-doped crystals centered at 976 nm with FWHM of 11, 11 and 12 nm and the absorption cross sections were 3.40 × 10-21 cm2, 4.00 × 10-21 cm2 and 2.66 × 10-21 cm2, respectively. The emission cross sections at 1040 nm were 2.19 × 10-21 cm2, 2.53 × 10-21 cm2 and 1.93 × 10-21 cm2, respectively. The fluorescence times of co-doped by Sr2+, Ca2+ and La3+ ions were shorter than that of Yb:α-Ba3Gd(BO3)3 crystal. So Yb:α-Ba3Gd(BO3)3 crystals co-doped by Sr2+, Ca2+ and La3+ ions will be more suitable for LD-pumping laser.

1.083 μm laser operation in Nd,Mg:LiTaO3 crystal

NASA Astrophysics Data System (ADS)

Hu, P. C.; Hang, Y.; Li, R.; Gong, J.; Yin, J. G.; Zhao, C. C.; He, X. M.; Yu, T.; Zhang, L. H.; Chen, W. B.; Zhu, Y. Y.

2011-10-01

Nd,Mg:LiTaO3 single crystal with high optical quality was grown by Czochralski technique. Absorption and fluorescence spectra were investigated. The peak absorption cross section at 806.5 nm and peak emission cross section at 1091 nm are 6.81×10-20 and 3.28×10-20 cm2, respectively. The fluorescence lifetime was measured to be 129 μs. With a laser-diode as the pump source, a maximum 375 mW continuous-wave laser output at 1083 nm has been obtained with a slope efficiency of 7.2% with respect to the pump power.

The influence of flash lamp annealing on the minority carrier lifetime of Czochralski silicon wafers

NASA Astrophysics Data System (ADS)

Kissinger, G.; Kot, D.; Sattler, A.

2014-02-01

Flash lamp annealing of moderately B-doped CZ silicon wafers for 20 ms with a normalized irradiance of about 0.9 was used to efficiently suppress oxygen precipitation during subsequent thermal processing. In this way, the minority carrier lifetime measured at high injection level by microwave-detected photo-conductance decay (μ-PCD) was increased from about 30 microseconds to about 300 microseconds after a thermal process consisting of 780 °C 3 h + 1000 °C 16 h. The grown-in oxide precipitate nuclei were shrunken to a subcritical size during the flash lamp anneal which prevents further growth during subsequent thermal processing.

Efficient, diode-pumped Tm3+:BaY2F8 vibronic laser

NASA Astrophysics Data System (ADS)

Cornacchia, F.; Parisi, D.; Bernardini, C.; Toncelli, A.; Tonelli, M.

2004-05-01

In this work we report the spectroscopy and laser results of several Thulium doped BaY2F8 single crystals grown using the Czochralski technique. The doping concentration is between 2at.% and 18at.%. We performed room temperature laser experiments pumping the samples with a laser diode at 789 nm obtaining 61% as maximum optical-to-optical efficiency with a maximum output power of 290 mW and a minimum lasing threshold of 26 mW. The lasing wavelength changed with the dopant concentration from 1927 nm up to 2030 nm and the nature of the transition changed from purely electronic to vibronic, accordingly.

Distribution of oxygen in silicon and its effects on electronic characteristics on a microscale

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Rava, P.; Lagowski, J. J.

1980-01-01

The microdistribution of oxygen in silicon was obtained by scanning IR absorption in as grown Czochralski crystals. The crystals were subsequently submitted to various heat treatments. The profiles of the generated thermal donors were determined by spreading resistance measurements. Contrary to the prevailing views, it was found that the concentration of the activated thermal donors is not strictly a function of the oxygen concentration, but depends strongly on an additional factor, which was shown to be associated with vacancy concentration. These conclusions could only be reached on the basis of microscale characterization. In fact, commonly employed macroscale analysis has led to erroneous conclusions.

Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

DOEpatents

Bond, Tiziana C.; Miles, Robin; Davidson, James C.; Liu, Gang Logan

2014-07-22

Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

DOEpatents

Bond, Tiziana C.; Miles, Robin; Davidson, James C.; Liu, Gang Logan

2015-07-14

Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

DOEpatents

Bond, Tiziana C; Miles, Robin; Davidson, James; Liu, Gang Logan

2015-11-03

Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Non-Invasive Optical Characterization of Defects in Gallium Arsenide.

NASA Astrophysics Data System (ADS)

Cao, Xuezhong

This work is concerned with the development of a non-invasive comprehensive defect analysis system based on computer-assisted near infrared (NIR) microscopy. Focus was placed on the development of software for quantitative image analysis, contrast enhancement, automated defects density counting, and two-dimensional defect density mapping. Bright field, dark field, phase contrast, and polarized light imaging modes were explored for the analysis of striations, precipitates, decorated and undecorated dislocations, surface and subsurface damage, and local residual strain in GaAs wafers. The origin of the contrast associated with defect image formation in NIR microscopy was analyzed. The local change in the index of refraction about a defect was modelled as a mini-lens. This model can explain reversal of image contrast for dislocations in heavily doped n-type GaAs during defocusing. Defect structures in GaAs crystals grown by the conventional liquid encapsulated Czochralski (LEC) method are found to differ significantly from those grown by the horizontal Bridgman (HB) or vertical gradient freeze (VGF) method. Dislocation densities in HB and VGF GaAs are one to two orders of magnitude lower compared to those in conventional LEC GaAs. The dislocations in HB and VGF GaAs remain predominantly on the {111}/<1 |10> primary slip system and tend to form small-angle subboundaries. Much more complicated dislocation structures are found in conventional LEC GaAs. Dislocation loops, dipoles, and helices were observed, indicating strong interaction between dislocations and point defects in these materials. Precipitates were observed in bulk GaAs grown by the LEC, HB, and VGF methods. Precipitation was found to occur predominantly along dislocation lines, however, discrete particles were also observed in dislocation-free regions of the GaAs matrix. The size of discrete precipitates is much smaller than that of the precipitates along dislocations. Quenching after high temperature annealing at 1150^ circC was found effective in dissolving the precipitates but glide dislocations are generated during the quenching process. STEM/EDX analysis showed that the precipitates are essentially pure arsenic in both undoped and doped GaAs. NIR phase contrast transmission microscopy was found to be very sensitive in detecting surface and subsurface damage on commercial GaAs wafers. Wafers from a number of GaAs manufacturers were examined. It was shown that some GaAs wafers exhibit perfect surface quality, but in many instances they exhibit, to various extents, subsurface damage. Computer-assisted NIR transmission microscopy in a variety of modes is found to be a rapid and non-invasive technique suitable for wafer characterization in a fabline environment. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.) (Abstract shortened by UMI.).

Micro pulling down growth of very thin shape memory alloys single crystals

NASA Astrophysics Data System (ADS)

López-Ferreño, I.; Juan, J. San; Breczewski, T.; López, G. A.; Nó, M. L.

Shape memory alloys (SMAs) have attracted much attention in the last decades due to their thermo-mechanical properties such as superelasticity and shape memory effect. Among the different families of SMAs, Cu-Al-Ni alloys exhibit these properties in a wide range of temperatures including the temperature range of 100-200∘C, where there is a technological demand of these functional materials, and exhibit excellent behavior at small scale making them more competitive for applications in Micro Electro-Mechanical Systems (MEMS). However, polycrystalline alloys of Cu-based SMAs are very brittle so that they show their best thermo-mechanical properties in single-crystal state. Nowadays, conventional Bridgman and Czochralski methods are being applied to elaborate single-crystal rods up to a minimum diameter of 1mm, but no works have been reported for smaller diameters. With the aim of synthesizing very thin single-crystals, the Micro-Pulling Down (μ-PD) technique has been applied, for which the capillarity and surface tension between crucible and the melt play a critical role. The μ-PD method has been successfully applied to elaborate several cylindrical shape thin single-crystals down to 200μm in diameter. Finally, the martensitic transformation, which is responsible for the shape memory properties of these alloys, has been characterized for different single-crystals. The experimental results evidence the good quality of the grown single-crystals.

Growth Angle - a Microscopic View

NASA Technical Reports Server (NTRS)

Mazurak, K.; Volz, M. P.; Croll, A.

2017-01-01

The growth angle that is formed between the side of the growing crystal and the melt meniscus is an important parameter in the detached Bridgman crystal growth method, where it determines the extent of the crystal-crucible wall gap, and in the Czochralski and float zone methods, where it influences the size and stability of the crystals. The growth angle is a non-equilibrium parameter, defined for the crystal growth process only. For a melt-crystal interface translating towards the crystal (melting), there is no specific angle defined between the melt and the sidewall of the solid. In this case, the corner at the triple line becomes rounded, and the angle between the sidewall and the incipience of meniscus can take a number of values, depending on the position of the triple line. In this work, a microscopic model is developed in which the fluid interacts with the solid surface through long range van der Waals or Casimir dispersive forces. This growth angle model is applied to Si and Ge and compared with the macroscopic approach of Herring. In the limit of a rounded corner with a large radius of curvature, the wetting of the melt on the crystal is defined by the contact angle. The proposed microscopic approach addresses the interesting issue of the transition from a contact angle to a growth angle as the radius of curvature decreases.

Growth and optical properties of Co,Nd:LaMgAl11O19

NASA Astrophysics Data System (ADS)

Xu, Peng; Xia, Changtai; Di, Juqing; Xu, Xiaodong; Sai, Qinglin; Wang, Lulu

2012-12-01

Nd,Co:LaMgAl11O19 (abbreviated as Co,Nd:LMA) was grown using the Czochralski method. The structure, polarized absorption spectrum, fluorescence spectrum, and fluorescence decay time were analyzed. The as-grown crystal had very wide absorption bands at 794 nm, which can be pumped by GaAs laser diode without temperature stabilization. Two strong emission bands were present at 1056 nm and 1082 nm with full-width at half-maximum (FWHM) of 6 and 8 nm, respectively. The large FWHM is due to the inhomogeneity of the Nd ion sites. The lifetimes of the 4F3/2 manifold of Co,Nd:LMA at room temperature monitored at 905 nm, 1056 nm, and 1344 nm were 292, 288, and 350 μs, respectively, which was caused by the different contribution of the three different sites with D3h and C2v symmetry. The absorption band of Co is from 1.3 μm to 1.6 μm, and Co,Nd:LMA still has a strong emission around the 1.38 μm, indicating that the Co,Nd:LMA can be applied as a potential self-Q-switched material operating at 1.3 μm.

Limits of the copper decoration technique for delineating of the V I boundary

NASA Astrophysics Data System (ADS)

Válek, L.; Stehlík, Š.; Orava, J.; Ďurík, M.; Šik, J.; Wágner, T.

2007-05-01

Copper decoration technique was used for detection of the vacancy interstitial (V I) boundary in Czochralski silicon crystal. We used the technique for delineating defects in silicon previously reported by Mule’Stagno [Solid State Phenom. 82 84 (2002) 753] and we enriched it by an upgraded application of copper on the silicon surface. The new procedure is based on the deposition of elementary copper on the silicon surface from the copper nitrate solution. The new method is more efficient contrary to Mule’Stagno (2002) and it also decreases environmental drain. We compared five etchants in order to optimize the delineation of the V I boundary. A defect region of the same diameter was detected by all the used etchants, supreme sensitivity was obtained with Wright's etchant. The outer diameter of the defect region observed by the copper decoration technique coincides with the V I boundary diameter measured by OISF testing and approximately coincides with the V I boundary diameter measured by COP testing. We found that the copper decoration technique delineates oxygen precipitates in silicon and we observed the dependence of V I boundary detectability on the size of the oxygen precipitates.

Analysis of the defect clusters in congruent lithium tantalate

NASA Astrophysics Data System (ADS)

Vyalikh, Anastasia; Zschornak, Matthias; Köhler, Thomas; Nentwich, Melanie; Weigel, Tina; Hanzig, Juliane; Zaripov, Ruslan; Vavilova, Evgenia; Gemming, Sibylle; Brendler, Erica; Meyer, Dirk C.

2018-01-01

A wide range of technological applications of lithium tantalate (LT) is closely related to the defect chemistry. In literature, several intrinsic defect models have been proposed. Here, using a combinational approach based on DFT and solid-state NMR, we demonstrate that distribution of electric field gradients (EFGs) can be employed as a fingerprint of a specific defect configuration. Analyzing the distribution of 7Li EFGs, the FT-IR and electron spin resonance (ESR) spectra, and the 7Li spin-lattice relaxation behavior, we have found that the congruent LT samples provided by two manufacturers show rather different defect concentrations and distributions although both were grown by the Czochralski method. After thermal treatment hydrogen out-diffusion and homogeneous distribution of other defects have been observed by ESR, NMR, and FT-IR. The defect structure in one of two congruent LT crystals after annealing has been identified and proved by defect formation energy considerations, whereas the more complex defect configuration, including the presence of extrinsic defects, has been suggested for the other LT sample. The approach of searching the EFG fingerprints from DFT calculations in NMR spectra can be applied for identifying the defect clusters in other complex oxides.

Growth and piezoelectric properties of Ca3Nb(Al0.5Ga0.5)3Si2O14 crystals with langasite structure

NASA Astrophysics Data System (ADS)

Xiong, Kainan; Zheng, Yanqing; Tu, Xiaoniu; Jiang, Bohan; Cao, Shuoliang; Shi, Erwei

2017-06-01

Piezoelectric crystals Ca3Nb(Al0.5Ga0.5)3Si2O14 (CNAGS) with langasite structure have been successfully grown by Czochralski method. In this work, the crystal structure, quality, chemical composition, piezoelectric properties, electric resistivity and optical properties of the as-grown crystals were characterized. The full width at half-maximum (FWHM) of the rocking curve of CNAGS was found to be 23″. The chemical compositions of CNAGS crystals are very close to that of initial compositions. At room temperature, the piezoelectric coefficients d11 and d14 of CNAGS crystals are 4.12 pC/N and -5.03 pC/N, and the electromechanical coupling coefficients k12 and k26 are also determined as 11.6% and 18.3%, respectively. The electric resistivity of as-growth crystal was found to be on the order of 2×108 Ω cm at 500 °C and 1×106 Ω cm at 800 °C. And the transmittances of CNAGS crystals were found to be over 80% in the wavelength range of 700-2700 nm.

Rapid mitigation of carrier-induced degradation in commercial silicon solar cells

NASA Astrophysics Data System (ADS)

Hallam, Brett J.; Chan, Catherine E.; Chen, Ran; Wang, Sisi; Ji, Jingjia; Mai, Ly; Abbott, Malcolm D.; Payne, David N. R.; Kim, Moonyong; Chen, Daniel; Chong, CheeMun; Wenham, Stuart R.

2017-08-01

We report on the progress for the understanding of carrier-induced degradation (CID) in p-type mono and multi-crystalline silicon (mc-Si) solar cells, and methods of mitigation. Defect formation is a key aspect to mitigating CID. Illuminated annealing can be used for both mono and mc-Si solar cells to reduce CID. The latest results of an 8-s UNSW advanced hydrogenation process applied to industrial p-type Czochralski PERC solar cells are shown with average efficiency enhancements of 1.1% absolute from eight different solar cell manufacturers. Results from three new industrial CID mitigation tools are presented, reducing CID to 0.8-1.1% relative, compared to 4.2% relative on control cells. Similar advanced hydrogenation processes can also be applied to multi-crystalline silicon passivated emitter with rear local contact (PERC) cells, however to date, the processes take longer and are less effective. Modifications to the firing processes can also suppress CID in multi-crystalline cells during subsequent illumination. The most stable results are achieved with a multi-stage process consisting of a second firing process at a reduced firing temperature, followed by extended illuminated annealing.

Low carrier semiconductor like behavior in Lu3Ir4Ge13 single crystal

NASA Astrophysics Data System (ADS)

Kumar, Anil; Matteppanavar, Shidaling; Thamizhavel, A.; Ramakrishnan, S.

2018-04-01

Single crystal of Lu3Ir4Ge13 crystallizing in the Yb3Rh4Sn13-type cubic crystal structure has been grown by Czochralski method in a tetra-arc furnace. In this paper we report on the crystal structure, magnetic and transport properties of Lu3Ir4Ge13. The analysis of the powder x-ray diffraction (XRD) studies revealed that Lu3Ir4Ge13 crystallizes in a cubic structure with the space group Pm-3n, no. 223. The lattice parameter was obtained from the Rietveld refinement of the room temperature XRD data which amounts to 8.904 (3) Å with low R factors. The temperature dependence of the resistivity exhibited semiconductor like behavior till 1.8 K, with a broad hump around 15 - 62 K. This hump was observed in both warming and cooling cycle with a very small hysteresis, it may be due to the existence of structural transition from high - low symmetry. The temperature dependent magnetization data shows the diamagnetic behavior with an anomaly around 70 K, which is well supported by the derivative of resistivity data.

Growth, Faraday and inverse Faraday characteristics of Tb₂Ti₂O₇ crystal.

PubMed

Guo, Feiyun; Sun, Yilin; Yang, Xiongsheng; Chen, Xin; Zhao, Bin; Zhuang, Naifeng; Chen, Jianzhong

2016-03-21

Tb₂Ti₂O₇ (TTO) single crystal with dimensions of 20 × 20 × 16 mm³ was grown by the Czochralski method. Rietveld structure refinement of X-ray diffraction (XRD) data confirms that the compound crystallizes in the cubic system with pyrochlore structure. Transmission spectra, Magnetic circular dichroism (MCD) spectra, Faraday and inverse Faraday characteristics of TTO crystal have been measured and analyzed in detail. The results demonstrate that TTO crystal has high transmittance at 700-1400 nm waveband and a larger Verdat constant than that of TGG reported. Magnetic circular dichroism (MCD) spectra showed that the 4f→4f transitions of Tb³⁺ have significant contributions to the magneto-optical activity (MOA). In the time-resolved pump-probe spectroscopy, the rotation signals of the probe beam based on the inverse Faraday effect in magneto-optical crystal were observed at zero time delay, the full width at half maximum of the rotation and ellipticity signals can be as fast as ~500 fs, which indicates that TTO crystal can be a promising material for ultrafast all-optical magnetic switching.

Growth and spectroscopic properties of Sm3+:KY(WO4)2 crystal

NASA Astrophysics Data System (ADS)

Demesh, M. P.; Dernovich, O. P.; Gusakova, N. V.; Yasukevich, A. S.; Kornienko, A. A.; Dunina, E. B.; Fomicheva, L. A.; Pavlyuk, A. A.; Kuleshov, N. V.

2018-01-01

A Sm3+:KY(WO4)2 crystal was grown by the modified Czochralski technique. Polarized absorption and fluorescence spectra, as well as a fluorescence decay curve, were recorded at room temperature. Radiative properties such as emission probabilities, branching ratios and radiative lifetimes were investigated within the framework of the Judd-Ofelt theory as well as the theory of f-f transition intensities which takes into account the influence of the excited configurations. Emission cross section spectra were determined. 4G5/2 fluorescence decay was analyzed within the framework of the Inokuti-Hirayama model. The spectroscopic properties of Sm:KYW crystal were compared with those of other Sm3+-doped materials.

The effect of secondary impurities on solar cell performance

NASA Technical Reports Server (NTRS)

Hill, D. E.; Gutsche, H. W.; Wang, M. S.; Gupta, K. P.; Tucker, W. F.; Dowdy, J. D.; Crepin, R. J.

1976-01-01

Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

NASA Astrophysics Data System (ADS)

Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

2016-09-01

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

Microdistribution of oxygen in silicon and its effects on electronic properties

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Mao, B. Y.; Nauka, K.; Lagowski, J.

1982-01-01

The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations.

Determination of the p-spray profile for n+ p silicon sensors using a MOSFET

NASA Astrophysics Data System (ADS)

Fretwurst, E.; Garutti, E.; Klanner, R.; Kopsalis, I.; Schwandt, J.; Weberpals, M.

2017-09-01

The standard technique to electrically isolate the n+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p+-implants. Although the knowledge of the p+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with ≈ 3 . 5 × 1012cm-2 of boron and 〈 100 〉 crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3 . 5 × 1012cm-3 and 2 × 1015cm-3 for the MOSFET with p+-implant, is determined down to a distance of a fraction of a μm from the Si-SiO2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed.

10 CFR 963.16 - Postclosure suitability evaluation method.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 963.16 Energy DEPARTMENT OF ENERGY YUCCA MOUNTAIN SITE SUITABILITY GUIDELINES Site Suitability... assessment to evaluate the ability of the Yucca Mountain disposal system to limit radiological doses and... the performance of the Yucca Mountain disposal system using the method described in paragraph (b) of...

Determining the most suitable areas for artificial groundwater recharge via an integrated PROMETHEE II-AHP method in GIS environment (case study: Garabaygan Basin, Iran).

PubMed

Nasiri, Hossein; Boloorani, Ali Darvishi; Sabokbar, Hassan Ali Faraji; Jafari, Hamid Reza; Hamzeh, Mohamad; Rafii, Yusef

2013-01-01

Flood spreading is a suitable strategy for controlling and benefiting from floods. Selecting suitable areas for flood spreading and directing the floodwater into permeable formations are amongst the most effective strategies in flood spreading projects. Having combined geographic information systems (GIS) and multi-criteria decision analysis approaches, the present study sought to locate the most suitable areas for flood spreading operation in the Garabaygan Basin of Iran. To this end, the data layers relating to the eight effective factors were prepared in GIS environment. This stage was followed by elimination of the exclusionary areas for flood spreading while determining the potentially suitable ones. Having closely examined the potentially suitable areas using the Preference Ranking Organization Method for Enrichment Evaluations (PROMETHEE) II and analytic hierarchy process (AHP) methods, the land suitability map for flood spreading was produced. The PROMETHEE II and AHP were used for ranking all the alternatives and weighting the criteria involved, respectively. The results of the study showed that most suitable areas for the artificial groundwater recharge are located in Quaternary Q(g) and Q(gsc) geologic units and in geomorphological units of pediment and Alluvial fans with slopes not exceeding 3%. Furthermore, significant correspondence between the produced map and the control areas, where the flood spreading projects were successfully performed, provided further evidence for the acceptable efficiency of the integrated PROMETHEE II-AHP method in locating suitable flood spreading areas.

Towards and FVE-FAC Method for Determining Thermocapillary Effects on Weld Pool Shape

NASA Technical Reports Server (NTRS)

Canright, David; Henson, Van Emden

1996-01-01

Several practical materials processes, e.g., welding, float-zone purification, and Czochralski crystal growth, involve a pool of molten metal with a free surface, with strong temperature gradients along the surface. In some cases, the resulting thermocapillary flow is vigorous enough to convect heat toward the edges of the pool, increasing the driving force in a sort of positive feedback. In this work we examine this mechanism and its effect on the solid-liquid interface through a model problem: a half space of pure substance with concentrated axisymmetric surface heating, where surface tension is strong enough to keep the liquid free surface flat. The numerical method proposed for this problem utilizes a finite volume element (FVE) discretization in cylindrical coordinates. Because of the axisymmetric nature of the model problem, the control volumes used are torroidal prisms, formed by taking a polygonal cross-section in the (r, z) plane and sweeping it completely around the z-axis. Conservation of energy (in the solid), and conservation of energy, momentum, and mass (in the liquid) are enforced globally by integrating these quantities and enforcing conservation over each control volume. Judicious application of the Divergence Theorem and Stokes' Theorem, combined with a Crank-Nicolson time-stepping scheme leads to an implicit algebraic system to be solved at each time step. It is known that near the boundary of the pool, that is, near the solid-liquid interface, the full conduction-convection solution will require extremely fine length scales to resolve the physical behavior of the system. Furthermore, this boundary moves as a function of time. Accordingly, we develop the foundation of an adaptive refinement scheme based on the principles of Fast Adaptive Composite Grid methods (FAC). Implementation of the method and numerical results will appear in a later report.

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Growth of the 889 per cm infrared band in annealed electron-irradiated silicon

NASA Technical Reports Server (NTRS)

Svensson, B. G.; Lindstrom, J. L.; Corbett, J. W.

1985-01-01

Isothermal annealing of electron-irradiated Czochralski silicon has been studied at four different temperatures ranging from 304 to 350 C using infrared spectroscopy. At annealing temperatures above 300 C the irradiation-induced band at 830 per cm, usually attributed to a vacancy-oxygen complex (the A center), disappears and a new band at 889 per cm grows up. Within the experimental accuracy, the activation energy for the growth of this band is found to be identical with the value given by Stavola et al. for 'anomalous' oxygen diffusion in silicon. Also the frequency factors for the two processes are in reasonable agreement. The results show that a vacancy-assisted process may provide an explanation for enhanced motion of oxygen in silicon.

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

NASA Astrophysics Data System (ADS)

Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

2017-10-01

Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si

NASA Astrophysics Data System (ADS)

Li, Jiyang; Song, Lihui; Yu, Xuegong; Yang, Deren

2018-04-01

Oxygen precipitates (OPs) are unavoidably formed in Czochralski silicon (CZ-Si) containing relatively high concentrations of oxygen. The recombination behavior of such defects is also vital for bulk devices like solar cells as they can reduce the minority carrier lifetime and degrade the cell performance. In our experiments, the characteristics of oxygen precipitation in n-type CZ-Si are systematically investigated by means of Fourier transform infrared spectroscopy (FTIR), deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). It is found that the iron contamination in n-type CZ-Si can strongly influence the OPs generation and their electrical properties, whereas the hydrogen passivation can effectively reduce the recombination activity of OPs.

High purity low dislocation GaAs single crystals

NASA Technical Reports Server (NTRS)

Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

1982-01-01

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Effect of short wavelength illumination on the characteristic bulk diffusion length in ribbon silicon solar cells

NASA Technical Reports Server (NTRS)

Ho, C. T.; Mathias, J. D.

1981-01-01

The influence of short wavelength light on the characteristic bulk minority carrier diffusion length of the ribbon silicon photovoltaic cell has been investigated. We have measured the intensity and wavelength dependence of the diffusion length in an EFG ribbon cell, and compared it with a standard Czochralski grown silicon cell. While the various short wavelength illuminations have shown no influence on the diffusion length in the CZ cell, the diffusion lengths in the ribbon cell exhibit a strong dependence on the volume generation rate as well as on the wavelength of the superimposed lights. We have concluded that the trap-filling phenomenon at various depths in the bulk neutral region of the cell is consistent with the experimental observation.

Scintillation properties of Li6Y0.5Gd0.5(BO3)3: Ce3+ single crystal

NASA Astrophysics Data System (ADS)

Fawad, U.; Rooh, Gul; Kim, H. J.; Park, H.; Kim, Sunghwan; Khan, Sajid

2015-01-01

The Ce3+ doped mixed crystals of Li6Y(BO3)3 and Li6Gd(BO3)3 are grown by Czochralski technique with equal mole ratios of both Yttrium and Gadolinium i.e. Li6Y0.5Gd0.5(BO3)3. The grown crystals have the dimensions of ∅10×30 mm2. Powder X-ray diffraction (XRD) analysis confirmed single phase of the grown crystals. X-ray and laser induced luminescence spectra are presented. Scintillation properties such as energy resolution, light yield, decay time and α/β ratio under the excitation of 137Cs γ-ray photons and 241Am α-particles are also reported in this article.

Automated Array Assembly, Phase 2. Low-cost Solar Array Project, Task 4

NASA Technical Reports Server (NTRS)

Lopez, M.

1978-01-01

Work was done to verify the technological readiness of a select process sequence with respect to satisfying the Low Cost Solar Array Project objectives of meeting the designated goals of $.50 per peak watt in 1986 (1975 dollars). The sequence examined consisted of: (1) 3 inches diameter as-sawn Czochralski grown 1:0:0 silicon, (2) texture etching, (3) ion implanting, (4) laser annealing, (5) screen printing of ohmic contacts and (6) sprayed anti-reflective coatings. High volume production projections were made on the selected process sequence. Automated processing and movement of hardware at high rates were conceptualized to satisfy the PROJECT's 500 MW/yr capability. A production plan was formulated with flow diagrams integrating the various processes in the cell fabrication sequence.

Pulsed excimer laser processing

NASA Technical Reports Server (NTRS)

Wong, D.

1985-01-01

The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.

Development of Advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

NASA Technical Reports Server (NTRS)

1981-01-01

The modified CG2000 crystal grower construction, installation, and machine check-out was completed. The process development check-out proceeded with several dry runs and one growth run. Several machine calibrations and functional problems were discovered and corrected. Several exhaust gas analysis system alternatives were evaluated and an integrated system approved and ordered. A contract presentation was made at the Project Integration Meeting at JPL, including cost-projections using contract projected throughput and machine parameters. Several growth runs on a development CG200 RC grower show that complete neck, crown, and body automated growth can be achieved with only one operator input. Work continued for melt level, melt temperature, and diameter sensor development.

[Climate suitability for tea growing in Zhejiang Province].

PubMed

Jin, Zhi-Feng; Ye, Jian-Gang; Yang, Zai-Qiang; Sun, Rui; Hu, Bo; Li, Ren-Zhong

2014-04-01

It is important to quantitatively assess the climate suitability of tea and its response to climate change. Based on meteorological indices of tea growth and daily meteorological data from 1971 to 2010 in Zhejiang Province, three climate suitability models for single climate factors, including temperature, precipitation and sunshine, were established at a 10-day scale by using the fuzzy mathematics method, and a comprehensive climate suitability model was established with the geometric average method. The results indicated that the climate suitability was high in the tea growth season in Zhejiang Province, and the three kinds of climate suitability were all higher than 0.6. As for the single factor climate suitability, temperature suitability was the highest and sunshine suitability was the lowest. There were obvious inter-annual variations of tea climate suitability, with a decline trend in the 1970s, less variation in the 1980s, and an obvious incline trend after the 1990s. The change tendency of climate suitability for spring tea was similar with that of annual climate suitability, lower in the 1980s, higher in the 1970s and after the 1990s. However, the variation amplitude of the climate suitability for spring tea was larger. The climate suitability for summer tea and autumn tea showed a decline trend from 1971 to 2010.

Spectroscopic characterisation of Er-doped LuVO4 single crystals

NASA Astrophysics Data System (ADS)

Lisiecki, R.; Dominiak-Dzik, G.; Solarz, P.; Strzęp, A.; Ryba-Romanowski, W.; Łukasiewicz, T.

2010-12-01

The LuVO4:Er single crystals were grown by the Czochralski technique. The crystal-field split energy levels of Er3+ ion were derived experimentally employing absorption and emission spectra measured at T=10 K. The Judd-Ofelt phenomenological method was used to estimate intensity parameters, radiative lifetimes and branching ratios of luminescence. The excited state dynamics of the LuVO4:Er systems was investigated and experimental lifetimes of emitting levels were measured. The emission cross section of the 4I13/2→4I15/2 transition in the infrared was calculated by the Füchtbauer-Ladenburg method. The gain cross section, estimated for several inverse-population parameters, allowed us to evaluate a potential laser activity of the LuVO4:Er system at 1.6 μm. Also, the potential range of the optical pumping was assessed based on absorption spectra achieved at the room temperature. The optical losses related to the green up-converted emission, encountered under the 978 nm excitation between 300 and 670 K were indicated and discussed. Spectroscopic peculiarities of the Er3+-doped LuVO4 crystal were discussed in relation to optical properties of the YVO4:Er and GdVO4:Er crystals. Taking into account the high quantum efficiency of the 4I13/2 level, and satisfactory absorption and emission features, the LuVO4:Er crystal can be considered as a promising active material for laser operation near 1.6 μm.

The growth and investigations of electromechanical properties of Fresnoite Ba2Si2TiO8 crystal as a function of orientation

NASA Astrophysics Data System (ADS)

Shen, Chuanying; Wang, Duanliang; Zhang, Jinyue; Zhang, Huaijin; Wang, Jiyang; Boughton, Robert I.

2018-04-01

Large sized Fresnoite Ba2TiSi2O8 single crystals were grown by the Czochralski method. Using coordinate transformation methods, the relative dielectric, piezoelectric and elastic constants of Fresnoite Ba2TiSi2O8 as a function of orientation were investigated, and their two- and three-dimensional spatial distributions are presented. From them, the maximum values of the piezoelectric coefficients and the corresponding rotation angle can be obtained. The maximum values of coefficients d22∗, d23∗, d24∗, d32∗, d33∗ and d34∗ were achieved for rotation angles of 40°, 32°, 0°, 58°, 50° and 90°, respectively, and are on the order of 8.7, -4.7, 17.5, 4.7, 8.7 and 17.5 pC/N, respectively. Furthermore, the validity of the electromechanical properties investigation as a function of orientation was verified. The relative dielectric permittivity, elastic constant and piezoelectric coefficient of a ZXl50o cut rod were calculated and found to be 14.1, 8.7 pC/N and 11.2 pm2/N, respectively, in good agreement with the experimental values of 12.7, 9.1 pC/N and 11.7 pm2/N. This investigation is important in providing direction for theoretical research and device design of piezoelectric Ba2TiSi2O8 crystals.

Crystal growth, crystal structure of new polymorphic modification, β-Bi 2B 8O 15 and thermal expansion of α-Bi 2B 8O 15

NASA Astrophysics Data System (ADS)

Bubnova, R. S.; Alexandrova, J. V.; Krivovichev, S. V.; Filatov, S. K.; Egorysheva, A. V.

2010-02-01

Single crystals of α- and β-polymorphs of Bi 2B 8O 15 were grown by Czochralski method from a charge of the stoichiometric composition. The crystal structure of β-Bi 2B 8O 15 was solved by direct methods from a twinned crystal and refined to R1=0.081 (w R=0.198) on the basis of 1584 unique observed reflections ( I>2 σ( I)). The compound is triclinic, space group P1¯, a=4.3159(8), b=6. 4604(12), c=22.485(4) Å, α=87.094(15)°, β=86.538(15)°, γ=74.420(14)°, V=602.40(19) Å 3, Z=2. The B-O layered anion of β-Bi 2B 8O 15 is topologically identical to the anion of α-Bi 2B 8O 15 but the orientation of neighboring layers is different. Thermal expansion of α-Bi 2B 8O 15 has been investigated by X-ray powder diffraction in air in temperature range from 20 to 700 °C. It is strongly anisotropic, which can be explained by the hinge mechanism applied to chains of Bi-O polyhedra. While the anisotropy of thermal expansion is rather high, the volume thermal expansion coefficient α V=40×10 6 °C -1 for α-Bi 2B 8O 15 is close to those of other bismuth borates.

Identification of suitable sites for mountain ginseng cultivation using GIS and geo-temperature.

PubMed

Kang, Hag Mo; Choi, Soo Im; Kim, Hyun

2016-01-01

This study was conducted to explore an accurate site identification technique using a geographic information system (GIS) and geo-temperature (gT) for locating suitable sites for growing cultivated mountain ginseng (CMG; Panax ginseng), which is highly sensitive to the environmental conditions in which it grows. The study site was Jinan-gun, South Korea. The spatial resolution for geographic data was set at 10 m × 10 m, and the temperatures for various climatic factors influencing CMG growth were calculated by averaging the 3-year temperatures obtained from the automatic weather stations of the Korea Meteorological Administration. Identification of suitable sites for CMG cultivation was undertaken using both a conventional method and a new method, in which the gT was added as one of the most important factors for crop cultivation. The results yielded by the 2 methods were then compared. When the gT was added as an additional factor (new method), the proportion of suitable sites identified decreased by 0.4 % compared with the conventional method. However, the proportion matching real CMG cultivation sites increased by 3.5 %. Moreover, only 68.2 % corresponded with suitable sites identified using the conventional factors; i.e., 31.8 % were newly detected suitable sites. The accuracy of GIS-based identification of suitable CMG cultivation sites improved by applying the temperature factor (i.e., gT) in addition to the conventionally used factors.

Estimating Rooftop Suitability for PV: A Review of Methods, Patents, and Validation Techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melius, J.; Margolis, R.; Ong, S.

2013-12-01

A number of methods have been developed using remote sensing data to estimate rooftop area suitable for the installation of photovoltaics (PV) at various geospatial resolutions. This report reviews the literature and patents on methods for estimating rooftop-area appropriate for PV, including constant-value methods, manual selection methods, and GIS-based methods. This report also presents NREL's proposed method for estimating suitable rooftop area for PV using Light Detection and Ranging (LiDAR) data in conjunction with a GIS model to predict areas with appropriate slope, orientation, and sunlight. NREL's method is validated against solar installation data from New Jersey, Colorado, and Californiamore » to compare modeled results to actual on-the-ground measurements.« less

Test site suitability assessment for radiation measurements

NASA Astrophysics Data System (ADS)

Borsero, M.; Nano, E.

1980-04-01

Field and attenuation methods for site suitability assessment for radiation measurements are presented. Attention is given to the IEC procedure for checking the suitability of radiation measurement site.

Dopant occupancy and exposure energy in Hf:Nd:LiNbO3 crystal as a function of [Li]/[Nb] ratios

NASA Astrophysics Data System (ADS)

Dai, Li; Liu, Chunrui; Han, Xianbo; Yan, Zhehua; Tan, Chao; Wang, Luping; Xu, Yuheng

2017-09-01

A series of Hf: Nd: LiNbO3 crystals with various [Li]/[Nb] ratios ([Li]/[Nb] = 0.94, 1.05, 1.20, 1.38) in the melt were grown by conventional Czochralski technique. The distribution coefficients of Hf4+ and Nd3+ ions were recorded by an inductively coupled plasma-atomic emission spectrometer (ICP-AES). The effective distribution coefficient of Hf4+ is reduced and that of Nd3+ is increased with the increase of [Li]/[Nb] ratio in the melts. In all cases, the effective distribution coefficients is less than 1. The IR transmission spectroscopy of the Hf: Nd: LiNbO3 crystals were measured, getting the results that Hf: Yb: Ho: LiNbO3 crystals with 1.05 [Li]/[Nb] ratios was the stoichiometric. The optical damage resistance ability of Hf:Nd:LiNbO3 crystals were studied by light-induced scattering exposure energy flux threshold method and it increases with the increasing of [Li]/[Nb] ratios. When the [Li]/[Nb] ratio is 1.38 in the melt (the sample 4#), the exposure energy achieves 687.35 J/cm2, approximately 441 folds than that of the sample 1# ([Li]/[Nb] = 0.94) in magnitude.

Yb3+-doped cadmium molybdato-tungstate single crystal - Its structural, optical, magnetic and transport properties

NASA Astrophysics Data System (ADS)

Groń, T.; Tomaszewicz, E.; Berkowski, M.; Głowacki, M.; Oboz, M.; Kusz, J.; Sawicki, B.; Kukuła, Z.; Duda, H.

2018-06-01

Single crystal of new cadmium and ytterbium molybdato-tungstate (Cd0.9706⎕0.0098Yb0.0196(MoO4)0.9706(WO4)0.0294, where ⎕ denotes cationic vacancies) has been successfully grown by the Czochralski method in air and under 1 MPa. X-ray crystallographic analysis reveals that the as-grown single crystal belongs to a scheelite-type structure (a = b = 5.15539(12) and c = 11.1919(3) Å, space group I41/a), in which Yb3+ ions do not show long-range order and are randomly distributed in the unit cell, substituting the Cd2+ ones. The as-grown single crystal does not show anisotropy of optical properties, i.e. its direct band gap reaches Eg = 1.76 or 1.75 eV along (100) and (001) crystallographic directions, respectively. The single crystal exhibits paramagnetic state with short-range antiferromagnetic and long-range ferrimagnetic interactions, a magnetization with zero coercivity and, a remanence that is almost a universal function of H/T, characterizing superparamagnetic-like behaviour. Electrical studies of the new ytterbium-doped cadmium molybdato-tungstate single crystal show a relatively small dielectric constant (εr<12), large lossiness of Joule-Lenz type observed at low frequencies as well as nonlinear I-V characteristics of Schottky or Maxwell-Wagner type.

Dimer self-organization of impurity ytterbium ions in synthetic forsterite single crystals

NASA Astrophysics Data System (ADS)

Tarasov, V. F.; Sukhanov, A. A.; Dudnikova, V. B.; Zharikov, E. V.; Lis, D. A.; Subbotin, K. A.

2017-07-01

Paramagnetic centers formed by impurity Yb3+ ions in synthetic forsterite (Mg2SiO4) grown by the Czochralski technique are studied by X-band CW and pulsed EPR spectroscopy. These centers are single ions substituting magnesium in two different crystallographic positions denoted M1 and M2, and dimer associates formed by two Yb3+ ions in nearby positions M1. It is established that there is a pronounced mechanism favoring self-organization of ytterbium ions in dimer associates during the crystal growth, and the mechanism of the spin-spin coupling between ytterbium ions in the associate has predominantly a dipole-dipole character, which makes it possible to control the energy of the spin-spin interaction by changing the orientation of the external magnetic field. The structural computer simulation of cluster ytterbium centers in forsterite crystals is carried out by the method of interatomic potentials using the GULP 4.0.1 code (General Utility Lattice Program). It is established that the formation of dimer associates in the form of a chain parallel to the crystallographic axis consisting of two ytterbium ions with a magnesium vacancy between them is the most energetically favorable for ytterbium ions substituting magnesium in the position M1.

Highly-efficient multi-watt Yb:CaLnAlO4 microchip lasers

NASA Astrophysics Data System (ADS)

Loiko, Pavel; Serres, Josep Maria; Mateos, Xavier; Xu, Xiaodong; Xu, Jun; Yumashev, Konstantin; Griebner, Uwe; Petrov, Valentin; Aguiló, Magdalena; Díaz, Francesc; Major, Arkady

2017-02-01

Tetragonal rare-earth calcium aluminates, CaLnAlO4 where Ln = Gd or Y (CALGO and CALYO, respectively), are attractive laser crystal hosts due to their locally disordered structure and high thermal conductivity. In the present work, we report on highly-efficient power-scalable microchip lasers based on 8 at.% Yb:CALGO and 3 at.% Yb:CALYO crystals grown by the Czochralski method. Pumped by an InGaAs laser diode at 978 nm, the 6 mm-long Yb:CALGO microchip laser generated 7.79 W at 1057-1065 nm with a slope efficiency of η = 84% (with respect to the absorbed pump power) and an optical-to-optical efficiency of ηopt = 49%. The 3 mm-long Yb:CALYO microchip laser generated 5.06 W at 1048-1056 nm corresponding to η = 91% and ηopt = 32%. Both lasers produced linearly polarized output (σ- polarization) with an almost circular beam profile and beam quality factors M2 x,y <1.1. The output performance of the developed lasers was modeled yielding a loss coefficient as low as 0.004-0.007 cm-1. The results indicate that the Yb3+- doped calcium aluminates are very promising candidates for high-peak-power passively Q-switched microchip lasers.

Heat-Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8Au x Si46-x Clathrate with Au Compositional Gradient

NASA Astrophysics Data System (ADS)

Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko

2018-02-01

Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat-electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat-electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8Au x Si46-x clathrate. Single-crystal Ba8Au x Si46-x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.

Methods, compounds and systems for detecting a microorganism in a sample

DOEpatents

Colston, Jr, Bill W.; Fitch, J. Patrick; Gardner, Shea N.; Williams, Peter L.; Wagner, Mark C.

2016-09-06

Methods to identify a set of probe polynucleotides suitable for detecting a set of targets and in particular methods for identification of primers suitable for detection of target microorganisms related polynucleotides, set of polynucleotides and compositions, and related methods and systems for detection and/or identification of microorganisms in a sample.

Liquid precursor for deposition of copper selenide and method of preparing the same

DOEpatents

Curtis, Calvin J.; Miedaner, Alexander; Franciscus Antonius Maria Van Hest, Marinus; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

2015-09-08

Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed.

Liquid precursor for deposition of indium selenide and method of preparing the same

DOEpatents

Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

2015-09-22

Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

76 FR 82201 - General Site Suitability Criteria for Nuclear Power Stations

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-30

..., and 52 [NRC-2011-0297] General Site Suitability Criteria for Nuclear Power Stations AGENCY: Nuclear... Suitability Criteria for Nuclear Power Stations.'' This guide describes a method that the NRC staff considers acceptable to implement the site suitability requirements for nuclear power stations. DATES: Submit comments...

Radiation imaging with a new scintillator and a CMOS camera

NASA Astrophysics Data System (ADS)

Kurosawa, S.; Shoji, Y.; Pejchal, J.; Yokota, Y.; Yoshikawa, A.

2014-07-01

A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd3(Al,Ga)5O12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camera (ORCA-Flash4.0, Hamamatsu) was revised and compared to a conventional CMOS, whose sensitivity is at the same level as that of a charge coupled device (CCD) camera. Without the scintillator, this system had a good position resolution of 2.1 ± 0.4 μm and we succeeded in obtaining the alpha-ray images using 1-mm thick Ce:GAGG crystal. This system can be applied for example to high energy X-ray beam profile monitor, etc.

Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

NASA Astrophysics Data System (ADS)

Fluegel, B.; Rice, A. D.; Mascarenhas, A.

2018-05-01

Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. The difference in the two materials may be due to the occupation of the substrate acceptor states in the presence of the midgap state EL2.

Ground-state splitting of ultrashallow thermal donors with negative central-cell corrections in silicon

NASA Astrophysics Data System (ADS)

Hara, Akito; Awano, Teruyoshi

2017-06-01

Ultrashallow thermal donors (USTDs), which consist of light element impurities such as carbon, hydrogen, and oxygen, have been found in Czochralski silicon (CZ Si) crystals. To the best of our knowledge, these are the shallowest hydrogen-like donors with negative central-cell corrections in Si. We observed the ground-state splitting of USTDs by far-infrared optical absorption at different temperatures. The upper ground-state levels are approximately 4 meV higher than the ground-state levels. This energy level splitting is also consistent with that obtained by thermal excitation from the ground state to the upper ground state. This is direct evidence that the wave function of the USTD ground state is made up of a linear combination of conduction band minimums.

Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, Bhushan; Basnyat, Prakash; Devayajanam, Srinivas

2017-01-01

We present experimental results which show that oxygen-related precipitate nuclei (OPN) present in p-doped, n-type, Czochralski wafers can be dissolved using a flash-annealing process, yielding very high quality wafers for high-efficiency solar cells. Flash annealing consists of heating a wafer in an optical furnace to temperature between 1150 and 1250 degrees C for a short time. This process produces a large increase in the minority carrier lifetime (MCLT) and homogenizes each wafer. We have tested wafers from different axial locations of two ingots. All wafers reach nearly the same high value of MCLT. The OPN dissolution is confirmed by oxygenmore » analysis using Fourier transform infrared spectra and injection-level dependence of MCLT.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Lee, Benjamin G.; Fogel, Derek

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defectsmore » in the SiO 2, compared with B dopants, and account for the excellent passivation.« less

Investigating reliability attributes of silicon photovoltaic cells - An overview

NASA Technical Reports Server (NTRS)

Royal, E. L.

1982-01-01

Reliability attributes are being developed on a wide variety of advanced single-crystal silicon solar cells. Two separate investigations: cell-contact integrity (metal-to-silicon adherence), and cracked cells identified with fracture-strength-reducing flaws are discussed. In the cell-contact-integrity investigation, analysis of contact pull-strength data shows that cell types made with different metallization technologies, i.e., vacuum, plated, screen-printed and soldered, have appreciably different reliability attributes. In the second investigation, fracture strength was measured using Czochralski wafers and cells taken at various stages of processing and differences were noted. Fracture strength, which is believed to be governed by flaws introduced during wafer sawing, was observed to improve (increase) after chemical polishing and other process steps that tend to remove surface and edge flaws.

Homogenization of CZ Si wafers by Tabula Rasa annealing

NASA Astrophysics Data System (ADS)

Meduňa, M.; Caha, O.; Kuběna, J.; Kuběna, A.; Buršík, J.

2009-12-01

The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, transmission electron microscopy and X-ray diffraction after application of homogenization annealing process called Tabula Rasa. The influence of this homogenization step consisting in short time annealing at high temperature has been observed for various temperatures and times. The experimental results involving the interstitial oxygen decay in Si wafers and absorption spectra of SiOx precipitates during precipitation annealing at 1000∘ C were compared with other techniques for various Tabula Rasa temperatures. The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied is evident from all used experimental techniques. The results qualitatively correlate with prediction of homogenization annealing process based on classical nucleation theory.

Magnetomechanical effect in silicon (Cz-Si) surface layers

NASA Astrophysics Data System (ADS)

Koplak, O. V.; Dmitriev, A. I.; Morgunov, R. B.

2012-07-01

The mechanical properties of near-surface layers of Czochralski-grown silicon crystals Cz- n-Si(111) have been found to undergo changes in response to an external constant magnetic field ( B ˜ 0.1 T). A magnetically induced variation in the microhardness, Young's modulus, and coefficient of plasticity of silicon crystals correlates with the change in the lattice parameter and internal stresses of the sample. The growth of an oxide film under exposure to a magnetic field plays the principal role in the magnetomechanical effect due to a decrease in the concentration of oxygen complexes in the near-surface layers of the sample. In microstructured silicon, where the surface is considerably more developed, the magnetic field induces more profound changes in the internal stresses as compared to single crystals.

Electrical parameter changes in silicon solar cells induced by thermal donor formation

NASA Astrophysics Data System (ADS)

Ruiz, J. M.; Cid, M.

Statistical results of 450 C annealing experiments of variable duration, performed on n(+)pp(+), 10-ohm-cm Czochralski silicon (Cz silicon), bifacial solar cells are presented. The specific temperature used is known to favor the nucleation of interstitial oxygen, creating the thermal donors, with important effects on the electrical properties of Cz silicon. Two distinct behaviors are observed with solar cells. The annealing during moderate time (below 4-5 h) leads, on the average, to an improvement of the photovoltaic performances. Longer heat treatments (mainly above 8 h) induce an effective inversion of the base polarity (from p type to n type), with the net result of partially losing the precedent benefits. Both phenomena have been found to be permanent, provided further processes at higher temperatures are avoided.

Design, fabrication and test of prototype furnace for continuous growth of wide silicon ribbon

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.

1976-01-01

A program having the overall objective of growing wide, thin silicon dendritic web crystals quasi-continuously from a semi-automated facility is discussed. The design considerations and fabrication of the facility as well as the test and operation phase are covered; detailed engineering drawings are included as an appendix. During the test and operation phase of the program, more than eighty growth runs and numerous thermal test runs were performed. At the conclusion of the program, 2.4 cm wide web was being grown at thicknesses of 100 to 300 micrometers. As expected, the thickness and growth rate are closely related. Solar cells made from this material were tested at NASA-Lewis and found to have conversion efficiencies comparable to devices fabricated from Czochralski material.

A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion

NASA Technical Reports Server (NTRS)

Faur, M.; Faur, M.; Flood, D. J.; Weinberg, I.; Brinker, D. J.; Goradia, C.; Fatemi, N.; Goradia, M.; Thesling, W.

1991-01-01

The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

NASA Technical Reports Server (NTRS)

Ko, K. Y.; Lagowski, J.; Gatos, H. C.

1989-01-01

Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

Hot zone design for controlled growth to mitigate cracking in laser crystal growth

NASA Astrophysics Data System (ADS)

Zhang, Hui; Zheng, Lili; Fang, Haisheng

2011-03-01

Cracking is a major problem during large diameter crystal growth. The objective of this work is to design an effective hot zone for a controlled growth of Yb:S-FAP [Yb3+:Sr5(PO4)3F] laser crystal by the Czochralski technology and effective cooling that can reduce stress. Theoretical and numerical analyses are performed to study the causes of cracking, mitigate the major cracking, as well as reduce cooling time. In the current system, three locations in the crystal are prone to crack, such as the top shoulder of the crystal, the middle portion above the crucible edge, and the bottom tail portion. Based on numerical simulations, we propose a new hot zone design and cooling procedure to grow and cool large diameter crystal without cracking.

External Standards or Standard Addition? Selecting and Validating a Method of Standardization

NASA Astrophysics Data System (ADS)

Harvey, David T.

2002-05-01

A common feature of many problem-based laboratories in analytical chemistry is a lengthy independent project involving the analysis of "real-world" samples. Students research the literature, adapting and developing a method suitable for their analyte, sample matrix, and problem scenario. Because these projects encompass the complete analytical process, students must consider issues such as obtaining a representative sample, selecting a method of analysis, developing a suitable standardization, validating results, and implementing appropriate quality assessment/quality control practices. Most textbooks and monographs suitable for an undergraduate course in analytical chemistry, however, provide only limited coverage of these important topics. The need for short laboratory experiments emphasizing important facets of method development, such as selecting a method of standardization, is evident. The experiment reported here, which is suitable for an introductory course in analytical chemistry, illustrates the importance of matrix effects when selecting a method of standardization. Students also learn how a spike recovery is used to validate an analytical method, and obtain a practical experience in the difference between performing an external standardization and a standard addition.

Solar cell efficiency and high temperature processing of n-type silicon grown by the noncontact crucible method

DOE PAGES

Jensen, Mallory A.; LaSalvia, Vincenzo; Morishige, Ashley E.; ...

2016-08-01

The capital expense (capex) of conventional crystal growth methods is a barrier to sustainable growth of the photovoltaic industry. It is challenging for innovative techniques to displace conventional growth methods due the low dislocation density and high lifetime required for high efficiency devices. One promising innovation in crystal growth is the noncontact crucible method (NOC-Si), which combines aspects of Czochralski (Cz) and conventional casting. This material has the potential to satisfy the dual requirements, with capex likely between that of Cz (high capex) and multicrystalline silicon (mc-Si, low capex). In this contribution, we observe a strong dependence of solar cellmore » efficiency on ingot height, correlated with the evolution of swirl-like defects, for single crystalline n-type silicon grown by the NOC-Si method. We posit that these defects are similar to those observed in Cz, and we explore the response of NOC-Si to high temperature treatments including phosphorous diffusion gettering (PDG) and Tabula Rasa (TR). The highest lifetimes (2033 us for the top of the ingot and 342 us for the bottom of the ingot) are achieved for TR followed by a PDG process comprising a standard plateau and a low temperature anneal. Further improvements can be gained by tailoring the time-temperature profiles of each process. Lifetime analysis after the PDG process indicates the presence of a getterable impurity in the as-grown material, while analysis after TR points to the presence of oxide precipitates especially at the bottom of the ingot. Uniform lifetime degradation is observed after TR which we assign to a presently unknown defect. Lastly, future work includes additional TR processing to uncover the nature of this defect, microstructural characterization of suspected oxide precipitates, and optimization of the TR process to achieve the dual goals of high lifetime and spatial homogenization.« less

Assessing coastal reclamation suitability based on a fuzzy-AHP comprehensive evaluation framework: A case study of Lianyungang, China.

PubMed

Feng, Lan; Zhu, Xiaodong; Sun, Xiang

2014-12-15

Coastal reclamation suitability evaluation (CRSE) is a difficult, complex and protracted process requiring the evaluation of many different criteria. In this paper, an integrated framework employing a fuzzy comprehensive evaluation method and analytic hierarchy process (AHP) was applied to the suitability evaluation for coastal reclamation for future sustainable development in the coastal area of Lianyungang, China. The evaluation results classified 6.63%, 22.99%, 31.59% and 38.79% of the coastline as suitable, weakly suitable, unsuitable and forbidden, respectively. The evaluation results were verified by the marine pollution data and highly consistent with the water quality status. The fuzzy-AHP comprehensive evaluation method (FACEM) was found to be suitable for the CRSE. This CRSE can also be applied to other coastal areas in China and thereby be used for the better management of coastal reclamation and coastline protection projects. Copyright © 2014 Elsevier Ltd. All rights reserved.

Using Geographic Information Systems to Determine Site Suitability for a Low-Level Radioactive Waste Storage Facility.

PubMed

Wilson, Charles A; Matthews, Kennith; Pulsipher, Allan; Wang, Wei-Hsung

2016-02-01

Radioactive waste is an inevitable product of using radioactive material in education and research activities, medical applications, energy generation, and weapons production. Low-level radioactive waste (LLW) makes up a majority of the radioactive waste produced in the United States. In 2010, over two million cubic feet of LLW were shipped to disposal sites. Despite efforts from several states and compacts as well as from private industry, the options for proper disposal of LLW remain limited. New methods for quickly identifying potential storage locations could alleviate current challenges and eventually provide additional sites and allow for adequate regional disposal of LLW. Furthermore, these methods need to be designed so that they are easily communicated to the public. A Geographic Information Systems (GIS) based method was developed to determine suitability of potential LLW disposal (or storage) sites. Criteria and other parameters of suitability were based on the Code of Federal Regulation (CFR) requirements as well as supporting literature and reports. The resultant method was used to assess areas suitable for further evaluation as prospective disposal sites in Louisiana. Criteria were derived from the 10 minimum requirements in 10 CFR Part 61.50, the Nuclear Regulatory Commission's Regulatory Guide 0902, and studies at existing disposal sites. A suitability formula was developed permitting the use of weighting factors and normalization of all criteria. Data were compiled into GIS data sets and analyzed on a cell grid of approximately 14,000 cells (covering 181,300 square kilometers) using the suitability formula. Requirements were analyzed for each cell using multiple criteria/sub-criteria as well as surrogates for unavailable datasets. Additional criteria were also added when appropriate. The method designed in this project proved to be sufficient for initial screening tests in determining the most suitable areas for prospective disposal (or storage) sites. Cells above 90%, 95%, and 99% suitability include respectively 404, 88, and 4 cells suitable for further analysis. With these areas identified, the next step in siting a LLW storage facility would be on-site analysis using additional requirements as specified by relevant regulatory guidelines. The GIS based method provides an easy, economic, efficient and effective means in evaluating potential sites for LLW storage facilities where sufficient GIS data exist.

A proposed configurable approach for recommendation systems via data mining techniques

NASA Astrophysics Data System (ADS)

Khedr, Ayman E.; Idrees, Amira M.; Hegazy, Abd El-Fatah; El-Shewy, Samir

2018-02-01

This study presents a configurable approach for recommendations which determines the suitable recommendation method for each field based on the characteristics of its data, the method includes determining the suitable technique for selecting a representative sample of the provided data. Then selecting the suitable feature weighting measure to provide a correct weight for each feature based on its effect on the recommendations. Finally, selecting the suitable algorithm to provide the required recommendations. The proposed configurable approach could be applied on different domains. The experiments have revealed that the approach is able to provide recommendations with only 0.89 error rate percentage.

[Study on ecological suitability regionalization of Eucommia ulmoides in Guizhou].

PubMed

Kang, Chuan-Zhi; Wang, Qing-Qing; Zhou, Tao; Jiang, Wei-Ke; Xiao, Cheng-Hong; Xie, Yu

2014-05-01

To study the ecological suitability regionalization of Eucommia ulmoides, for selecting artificial planting base and high-quality industrial raw material purchase area of the herb in Guizhou. Based on the investigation of 14 Eucommia ulmoides producing areas, pinoresinol diglucoside content and ecological factors were obtained. Using spatial analysis method to carry on ecological suitability regionalization. Meanwhile, combining pinoresinol diglucoside content, the correlation of major active components and environmental factors were analyzed by statistical analysis. The most suitability planting area of Eucommia ulmoides was the northwest of Guizhou. The distribution of Eucommia ulmoides was mainly affected by the type and pH value of soil, and monthly precipitation. The spatial structure of major active components in Eucommia ulmoides were randomly distributed in global space, but had only one aggregation point which had a high positive correlation in local space. The major active components of Eucommia ulmoides had no correlation with altitude, longitude or latitude. Using the spatial analysis method and statistical analysis method, based on environmental factor and pinoresinol diglucoside content, the ecological suitability regionalization of Eucommia ulmoides can provide reference for the selection of suitable planting area, artificial planting base and directing production layout.

Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luan, Qingbin; Ni, Zhenyi; Zhu, Tiejun

2014-12-15

Technologically important low-resistivity bulk Si has been usually produced by the traditional Czochralski growth method. We now explore a novel method to obtain low-resistivity bulk Si by hot-pressing B- and P-hyperdoped Si nanocrystals (NCs). In this work bulk Si with the resistivity as low as ∼ 0.8 (40) mΩ•cm has been produced by hot pressing P (B)-hyperdoped Si NCs. The dopant type is found to make a difference for the sintering of Si NCs during the hot pressing. Bulk Si hot-pressed from P-hyperdoped Si NCs is more compact than that hot-pressed from B-hyperdoped Si NCs when the hot-pressing temperature ismore » the same. This leads to the fact that P is more effectively activated to produce free carriers than B in the hot-pressed bulk Si. Compared with the dopant concentration, the hot-pressing temperature more significantly affects the structural and electrical properties of hot-pressed bulk Si. With the increase of the hot-pressing temperature the density of hot-pressed bulk Si increases. The highest carrier concentration (lowest resistivity) of bulk Si hot-pressed from B- or P-hyperdoped Si NCs is obtained at the highest hot-pressing temperature of 1050 °C. The mobility of carriers in the hot-pressed bulk Si is low (≤  ∼ 30 cm{sup -2}V{sup -1}s{sup -1}) mainly due to the scattering of carriers induced by structural defects such as pores.« less

Multigrid Techniques for Highly Indefinite Equations

NASA Technical Reports Server (NTRS)

Shapira, Yair

1996-01-01

A multigrid method for the solution of finite difference approximations of elliptic PDE's is introduced. A parallelizable version of it, suitable for two and multi level analysis, is also defined, and serves as a theoretical tool for deriving a suitable implementation for the main version. For indefinite Helmholtz equations, this analysis provides a suitable mesh size for the coarsest grid used. Numerical experiments show that the method is applicable to diffusion equations with discontinuous coefficients and highly indefinite Helmholtz equations.

Raster-based outranking method: a new approach for municipal solid waste landfill (MSW) siting.

PubMed

Hamzeh, Mohamad; Abbaspour, Rahim Ali; Davalou, Romina

2015-08-01

MSW landfill siting is a complicated process because it requires integration of several factors. In this paper, geographic information system (GIS) and multiple criteria decision analysis (MCDA) were combined to handle the municipal solid waste (MSW) landfill siting. For this purpose, first, 16 input data layers were prepared in GIS environment. Then, the exclusionary lands were eliminated and potentially suitable areas for the MSW disposal were identified. These potentially suitable areas, in an innovative approach, were further examined by deploying Preference Ranking Organization Method for Enrichment Evaluations (PROMETHEE) II and analytic network process (ANP), which are two of the most recent MCDA methods, in order to determine land suitability for landfilling. PROMETHEE II was used to determine a complete ranking of the alternatives, while ANP was employed to quantify the subjective judgments of evaluators as criteria weights. The resulting land suitability was reported on a grading scale of 1-5 from 1 to 5, which is the least to the most suitable area, respectively. Finally, three optimal sites were selected by taking into consideration the local conditions of 15 sites, which were candidates for MSW landfilling. Research findings show that the raster-based method yields effective results.

The {alpha}-particle excited scintillation response of the liquid phase epitaxy grown LuAG:Ce thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prusa, P.; Cechak, T.; Mares, J. A.

2008-01-28

Liquid phase epitaxy grown Lu{sub 3}Al{sub 5}O{sub 12}:Ce (LuAG:Ce) 20 {mu}m thick films and plate cut from the bulk Czochralski-grown LuAG:Ce crystal were prepared for comparison of photoelectron yield (PhY) and PhY dependence on shaping time (0.5-10 {mu}s). {sup 241}Am ({alpha} particles) was used for excitation. At the 0.5 {mu}s shaping time, the best film shows comparable PhY with the bulk sample. PhY of bulk material increases noticeably more with shaping time than that of the films. Energy resolution of films is better. Influence of Pb{sup 2+} contamination in the films (from the flux) and antisite Lu{sub Al} defect inmore » bulk material is discussed.« less

Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness. [crystal growth

NASA Technical Reports Server (NTRS)

Lane, R. L.

1981-01-01

Six growth runs used the Kayex-Hameo Automatic Games Logic (AGILE) computer based system for growth from larger melts in the Mod CG2000. The implementation of the melt pyrometer sensor allowed for dip temperature monitoring and usage by the operator/AGILE system. Use of AGILE during recharge operations was successfully evaluated. The tendency of crystals to lose cylindrical shape (spiraling) continued to be a problem. The hygrometer was added to the Furnace Gas Analysis System and used on several growth runs. The gas chromatograph, including the integrator, was also used for more accurate carbon monoxide concentration measurements. Efforts continued for completing the automation of the total Gas Analysis System. An economic analysis, based on revised achievable straight growth rate, is presented.

Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fluegel, B.; Rice, A. D.; Mascarenhas, A.

Resonant electronic Raman (ER) scattering is used to compare the below-gap excitations in molecular-beam epitaxially grown GaAs and in undoped semi-insulating GaAs substrates. The measurement geometry was designed to eliminate common measurement artifacts caused by the high optical transmission below the fundamental absorption edge. In epitaxial GaAs, ER is a clear Raman signal from the two-electron transitions of donors, eliminating an ambiguity encountered in previous results. In semi-insulating GaAs, ER occurs in a much broader dispersive band well below the bound exciton energies. Furthermore, the difference in the two materials may be due to the occupation of the substrate acceptormore » states in the presence of the midgap state EL2.« less

Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

NASA Technical Reports Server (NTRS)

Fiegl, G. F.; Bonora, A. C.

1980-01-01

The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veith-Wolf, Boris; Wang, Jianhui; Hannu-Kuure, Milja

2015-02-02

We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies ofmore » up to 19.8% on p-type Czochralski silicon.« less

Fluid mechanics in crystal growth - The 1982 Freeman scholar lecture

NASA Technical Reports Server (NTRS)

Ostrach, S.

1983-01-01

An attempt is made to unify the current state of knowledge in crystal growth techniques and fluid mechanics. After identifying important fluid dynamic problems for such representative crystal growth processes as closed tube vapor transport, open reactor vapor deposition, and the Czochralski and floating zone melt growth techniques, research results obtained to date are presented. It is noted that the major effort to date has been directed to the description of the nature and extent of bulk transport under realistic conditions, where bulk flow determines the heat and solute transport which strongly influence the temperature and concentration fields in the vicinity of the growth interface. Proper treatment of near field, or interface, problems cannot be given until the far field, or global flow, involved in a given crystal growth technique has been adequately described.

Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

1979-01-01

The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.

Method of preparation of uranium nitride

DOEpatents

Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

2013-07-09

Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

Buried Man-made Structure Imaging using 2-D Resistivity Inversion

NASA Astrophysics Data System (ADS)

Anderson Bery, Andy; Nordiana, M. M.; El Hidayah Ismail, Noer; Jinmin, M.; Nur Amalina, M. K. A.

2018-04-01

This study is carried out with the objective to determine the suitable resistivity inversion method for buried man-made structure (bunker). This study was carried out with two stages. The first stage is suitable array determination using 2-D computerized modeling method. One suitable array is used for the infield resistivity survey to determine the dimension and location of the target. The 2-D resistivity inversion results showed that robust inversion method is suitable to resolve the top and bottom part of the buried bunker as target. In addition, the dimension of the buried bunker is successfully determined with height of 7 m and length of 20 m. The location of this target is located at -10 m until 10 m of the infield resistivity survey line. The 2-D resistivity inversion results obtained in this study showed that the parameters selection is important in order to give the optimum results. These parameters are array type, survey geometry and inversion method used in data processing.

Selection of a suitable method for the preparation of polymeric nanoparticles: multi-criteria decision making approach.

PubMed

Krishnamoorthy, Kannan; Mahalingam, Manikandan

2015-03-01

The present study is aimed to select the suitable method for preparation of camptothecin loaded polymeric nanoparticles by utilizing the multi-criteria decision making method. Novel approaches of drug delivery by formulation using nanotechnology are revolutionizing the future of medicine. Recent years have witnessed unprecedented growth of research and application in the area of nanotechnology. Nanoparticles have become an important area of research in the field of drug delivery because they have the ability to deliver a wide range of drug to varying areas of body. Despite of extensive research and development, polymeric nanoparticles are frequently used to improve the therapeutic effect of drugs. A number of techniques are available for the preparation of polymeric nanoparticles. The Analytical Hierarchy Process (AHP) is a method for decision making, which are derived from individual judgements for qualitative factors, using the pair-wise comparison matrix. In AHP, a decision hierarchy is constructed with a goal, criteria and alternatives. The model uses three main criteria 1) Instrument, 2) Process and Output and 3) Cost. In addition, there are eight sub-criteria's as well as eight alternatives. Pair-wise comparison matrixes are used to obtain the overall priority weight and ranking for the selection of suitable method. Nanoprecipitation technique is the most suitable method for the preparation of camptothecin loaded polymeric nanoparticles with the highest overall priority weight of 0.297 CONCLUSION: In particular, the result indicates that the priority weights obtained from AHP could be defined as a multiple output for finding out the most suitable method for preparation of camptothecin loaded polymeric nanoparticles.

Evaluation of preparation methods for suspended nano-objects on substrates for dimensional measurements by atomic force microscopy

PubMed Central

Göhler, Daniel; Wessely, Benno; Stintz, Michael; Lazzerini, Giovanni Mattia; Yacoot, Andrew

2017-01-01

Dimensional measurements on nano-objects by atomic force microscopy (AFM) require samples of safely fixed and well individualized particles with a suitable surface-specific particle number on flat and clean substrates. Several known and proven particle preparation methods, i.e., membrane filtration, drying, rinsing, dip coating as well as electrostatic and thermal precipitation, were performed by means of scanning electron microscopy to examine their suitability for preparing samples for dimensional AFM measurements. Different suspensions of nano-objects (with varying material, size and shape) stabilized in aqueous solutions were prepared therefore on different flat substrates. The drop-drying method was found to be the most suitable one for the analysed suspensions, because it does not require expensive dedicated equipment and led to a uniform local distribution of individualized nano-objects. Traceable AFM measurements based on Si and SiO2 coated substrates confirmed the suitability of this technique. PMID:28904839

Evaluation of preparation methods for suspended nano-objects on substrates for dimensional measurements by atomic force microscopy.

PubMed

Fiala, Petra; Göhler, Daniel; Wessely, Benno; Stintz, Michael; Lazzerini, Giovanni Mattia; Yacoot, Andrew

2017-01-01

Dimensional measurements on nano-objects by atomic force microscopy (AFM) require samples of safely fixed and well individualized particles with a suitable surface-specific particle number on flat and clean substrates. Several known and proven particle preparation methods, i.e., membrane filtration, drying, rinsing, dip coating as well as electrostatic and thermal precipitation, were performed by means of scanning electron microscopy to examine their suitability for preparing samples for dimensional AFM measurements. Different suspensions of nano-objects (with varying material, size and shape) stabilized in aqueous solutions were prepared therefore on different flat substrates. The drop-drying method was found to be the most suitable one for the analysed suspensions, because it does not require expensive dedicated equipment and led to a uniform local distribution of individualized nano-objects. Traceable AFM measurements based on Si and SiO 2 coated substrates confirmed the suitability of this technique.

Selection of a Suitable Method for the Preparation of Polymeric Nanoparticles: Multi-Criteria Decision Making Approach

PubMed Central

Krishnamoorthy, Kannan; Mahalingam, Manikandan

2015-01-01

Purpose: The present study is aimed to select the suitable method for preparation of camptothecin loaded polymeric nanoparticles by utilizing the multi-criteria decision making method. Novel approaches of drug delivery by formulation using nanotechnology are revolutionizing the future of medicine. Recent years have witnessed unprecedented growth of research and application in the area of nanotechnology. Nanoparticles have become an important area of research in the field of drug delivery because they have the ability to deliver a wide range of drug to varying areas of body. Methods: Despite of extensive research and development, polymeric nanoparticles are frequently used to improve the therapeutic effect of drugs. A number of techniques are available for the preparation of polymeric nanoparticles. The Analytical Hierarchy Process (AHP) is a method for decision making, which are derived from individual judgements for qualitative factors, using the pair-wise comparison matrix. In AHP, a decision hierarchy is constructed with a goal, criteria and alternatives. Results: The model uses three main criteria 1) Instrument, 2) Process and Output and 3) Cost. In addition, there are eight sub-criteria’s as well as eight alternatives. Pair-wise comparison matrixes are used to obtain the overall priority weight and ranking for the selection of suitable method. Nanoprecipitation technique is the most suitable method for the preparation of camptothecin loaded polymeric nanoparticles with the highest overall priority weight of 0.297 Conclusion: In particular, the result indicates that the priority weights obtained from AHP could be defined as a multiple output for finding out the most suitable method for preparation of camptothecin loaded polymeric nanoparticles. PMID:25789220

Methods of Constructing a Blended Performance Function Suitable for Formation Flight

NASA Technical Reports Server (NTRS)

Ryan, Jack

2017-01-01

Two methods for constructing performance functions for formation fight-for-drag-reduction suitable for use with an extreme-seeking control system are presented. The first method approximates an a prior measured or estimated drag-reduction performance function by combining real-time measurements of readily available parameters. The parameters are combined with weightings determined from a minimum squares optimization to form a blended performance function.

Evaluating a vessel for suitability for containing fluid

DOEpatents

Barefield, II, James E.; Judge, Elizabeth J.; Le, Loan A.; Lopez, Leon N.; Beveridge, Andrew C.; Chapman, Daniel R.; Taylor, Seth T.

2017-05-30

A method for evaluating a vessel for suitability to contain a fluid includes providing a vessel and forming a polished surface portion of the vessel by removing oxidation and/or contaminants from a portion of the vessel. The method further includes applying a focused laser to the polished surface portion to form plasma on the polished surface portion, and determining whether the vessel is suitable for containing a fluid based on silicon content of the polished surface portion. The silicon content is estimated based on light emitted from the plasma.

Applications of Computer Simulation Methods in Plastic Forming Technologies for Magnesium Alloys

NASA Astrophysics Data System (ADS)

Zhang, S. H.; Zheng, W. T.; Shang, Y. L.; Wu, X.; Palumbo, G.; Tricarico, L.

2007-05-01

Applications of computer simulation methods in plastic forming of magnesium alloy parts are discussed. As magnesium alloys possess very poor plastic formability at room temperature, various methods have been tried to improve the formability, for example, suitable rolling process and annealing procedures should be found to produce qualified magnesium alloy sheets, which have the reduced anisotropy and improved formability. The blank can be heated to a warm temperature or a hot temperature; a suitable temperature field is designed, tools should be heated or the punch should be cooled; suitable deformation speed should be found to ensure suitable strain rate range. Damage theory considering non-isothermal forming is established. Various modeling methods have been tried to consider above situations. The following situations for modeling the forming process of magnesium alloy sheets and tubes are dealt with: (1) modeling for predicting wrinkling and anisotropy of sheet warm forming; (2) damage theory used for predicting ruptures in sheet warm forming; (3) modeling for optimizing of blank shape and dimensions for sheet warm forming; (4) modeling in non-steady-state creep in hot metal gas forming of AZ31 tubes.

Behavioral Ecology of Captive Species: Using Bibliographic Information to Assess Pet Suitability of Mammal Species

PubMed Central

Koene, Paul; de Mol, Rudi M.; Ipema, Bert

2016-01-01

Which mammal species are suitable to be kept as pet? For answering this question many factors have to be considered. Animals have many adaptations to their natural environment in which they have evolved that may cause adaptation problems and/or risks in captivity. Problems may be visible in behavior, welfare, health, and/or human–animal interaction, resulting, for example, in stereotypies, disease, and fear. A framework is developed in which bibliographic information of mammal species from the wild and captive environment is collected and assessed by three teams of animal scientists. Oneliners from literature about behavioral ecology, health, and welfare and human–animal relationship of 90 mammal species are collected by team 1 in a database and strength of behavioral needs and risks is assessed by team 2. Based on summaries of those strengths the suitability of the mammal species is assessed by team 3. Involvement of stakeholders for supplying bibliographic information and assessments was propagated. Combining the individual and subjective assessments of the scientists using statistical methods makes the final assessment of a rank order of suitability as pet of those species less biased and more objective. The framework is dynamic and produces an initial rank ordered list of the pet suitability of 90 mammal species, methods to add new mammal species to the list or remove animals from the list and a method to incorporate stakeholder assessments. A model is developed that allows for provisional classification of pet suitability. Periodical update of the pet suitability framework is expected to produce an updated list with increased reliability and accuracy. Furthermore, the framework could be further developed to assess the pet suitability of additional species of other animal groups, e.g., birds, reptiles, and amphibians. PMID:27243023

Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

DOEpatents

Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S [Evergreen, CO; Leisch, Jennifer [Denver, CO; Taylor, Matthew [West Simsbury, CT; Stanbery, Billy J [Austin, TX

2011-09-20

Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

21 CFR 640.63 - Suitability of donor.

Code of Federal Regulations, 2010 CFR

2010-04-01

... ADDITIONAL STANDARDS FOR HUMAN BLOOD AND BLOOD PRODUCTS Source Plasma § 640.63 Suitability of donor. (a) Method of determining. The suitability of a donor for Source Plasma shall be determined by a qualified... year. (2)(i) A donor who is to be immunized for the production of high-titer plasma shall be examined...

21 CFR 640.63 - Suitability of donor.

Code of Federal Regulations, 2012 CFR

2012-04-01

... ADDITIONAL STANDARDS FOR HUMAN BLOOD AND BLOOD PRODUCTS Source Plasma § 640.63 Suitability of donor. (a) Method of determining. The suitability of a donor for Source Plasma shall be determined by a qualified... year. (2)(i) A donor who is to be immunized for the production of high-titer plasma shall be examined...

21 CFR 640.63 - Suitability of donor.

Code of Federal Regulations, 2011 CFR

2011-04-01

... ADDITIONAL STANDARDS FOR HUMAN BLOOD AND BLOOD PRODUCTS Source Plasma § 640.63 Suitability of donor. (a) Method of determining. The suitability of a donor for Source Plasma shall be determined by a qualified... year. (2)(i) A donor who is to be immunized for the production of high-titer plasma shall be examined...

21 CFR 640.63 - Suitability of donor.

Code of Federal Regulations, 2013 CFR

2013-04-01

... ADDITIONAL STANDARDS FOR HUMAN BLOOD AND BLOOD PRODUCTS Source Plasma § 640.63 Suitability of donor. (a) Method of determining. The suitability of a donor for Source Plasma shall be determined by a qualified... year. (2)(i) A donor who is to be immunized for the production of high-titer plasma shall be examined...

21 CFR 640.63 - Suitability of donor.

Code of Federal Regulations, 2014 CFR

2014-04-01

... ADDITIONAL STANDARDS FOR HUMAN BLOOD AND BLOOD PRODUCTS Source Plasma § 640.63 Suitability of donor. (a) Method of determining. The suitability of a donor for Source Plasma shall be determined by a qualified... year. (2)(i) A donor who is to be immunized for the production of high-titer plasma shall be examined...

Experimental Evaluation of Suitability of Selected Multi-Criteria Decision-Making Methods for Large-Scale Agent-Based Simulations.

PubMed

Tučník, Petr; Bureš, Vladimír

2016-01-01

Multi-criteria decision-making (MCDM) can be formally implemented by various methods. This study compares suitability of four selected MCDM methods, namely WPM, TOPSIS, VIKOR, and PROMETHEE, for future applications in agent-based computational economic (ACE) models of larger scale (i.e., over 10 000 agents in one geographical region). These four MCDM methods were selected according to their appropriateness for computational processing in ACE applications. Tests of the selected methods were conducted on four hardware configurations. For each method, 100 tests were performed, which represented one testing iteration. With four testing iterations conducted on each hardware setting and separated testing of all configurations with the-server parameter de/activated, altogether, 12800 data points were collected and consequently analyzed. An illustrational decision-making scenario was used which allows the mutual comparison of all of the selected decision making methods. Our test results suggest that although all methods are convenient and can be used in practice, the VIKOR method accomplished the tests with the best results and thus can be recommended as the most suitable for simulations of large-scale agent-based models.

[Extraction method suitable for detection of unheated crustaceans including cephalothorax by ELISA].

PubMed

Shibahara, Yusuke; Yamada, Itta; Uesaka, Yoshihiko; Uneo, Noriko; Abe, Akihisa; Ohashi, Eiji; Shiomi, Kazuo

2009-08-01

When unheated whole samples of crustaceans (shrimp, prawn and crab) were analyzed with our ELISA kit (FA test EIA-Crustacean 'Nissui') using anti-tropomyosin antibodies, a remarkable reduction in reactivity was recognized. This reduction in activity was found to be due to the digestion of tropomyosin during the extraction process by proteases contained in cephalothorax. To avoid the digestion of tropomyosin by proteases, we developed an extraction method (heating method) suitable for the detection of tropomyosin in unheated crustaceans including cephalothorax. Experiments with unheated whole samples of various species of crustaceans confirmed that the heating method greatly improved the low reactivity in the standard method; the heating method gave extraction efficiencies of as high as 93-107%. Various processed crustaceans with cephalothorax, such as dry products (unheated or weakly heated products) and pickles in soy sauce (unheated products), that showed low reactivity with the standard method were confirmed to give superior results with the heating method. These results indicated that the developed heating method is suitable for detecting unheated crustaceans with cephalothorax by means of the ELISA kit.

In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth

NASA Astrophysics Data System (ADS)

Kakimoto, Koichi; Eguchi, Minoru; Watanabe, Hisao; Hibiya, Taketoshi

1990-01-01

In-situ observation of the impurity diffusion boundary layer during single crystal growth of indium-doped silicon was carried out by X-ray radiography. The difference in the transmitted X-ray image compared with molten silicon just beneath the crystal-melt interface was attributed to the concentration of indium impurities having a larger absorption coefficient. The intensity profile of the transmitted X-ray can be reproduced by a transmittance calculation that considers the meniscus shape and impurity distribution. The impurity distribution profile near the crystal-melt interface was estimated using the Burton-Prim-Slichter (BPS) equation. The observed impurity diffusion boundary layer thickness was about 0.5 mm. It was found that the boundary layer thickness was not constant in the radial direction, which cannot be explained by the BPS theory, since it is based on a one-dimensional calculation.

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

NASA Technical Reports Server (NTRS)

Ho, C.-T.

1982-01-01

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Efficiency improvement of silicon solar cells enabled by ZnO nanowhisker array coating

PubMed Central

2012-01-01

An efficient antireflection coating is critical for the improvement of silicon solar cell performance via increased light coupling. Here, we have grown well-aligned ZnO nanowhisker (NW) arrays on Czochralski silicon solar cells by a seeding-growth two-step process. It is found that the ZnO NWs have a great effect on the macroscopic antireflection effect and, therefore, improves the solar cell performance. The ZnO NW array-coated solar cells display a broadband reflection suppression from 500 to 1,100 nm, and the minimum reflectance smaller than 3% can easily be achieved. By optimizing the time of ZnO NW growth, it has been confirmed that an increase of 3% relatively in the solar cell efficiency can be obtained. These results are quite interesting for the application of ZnO nanostructure in the fabrication of high-efficiency silicon solar cells. PMID:22704578

Hall effect analysis in irradiated silicon samples with different resistivities

NASA Astrophysics Data System (ADS)

Borchi, E.; Bruzzi, M.; Dezillie, B.; Lazanu, S.; Li, Z.; Pirollo, S.

1999-08-01

The changes induced by neutron irradiation in n- and p-type silicon samples with starting resistivities from 10 /spl Omega/-cm up to 30 k/spl Omega/-cm, grown using different techniques, as float-zone (FZ), Czochralski (CZ) and epitaxial, have been analyzed by Van der Pauw and Hall effect measurements. Increasing the fluence, each set of samples evolves toward a quasi-intrinsic p-type material. This behavior has been explained in the frame of a two-level model, that considers the introduction during irradiation of mainly two defects. A deep acceptor and a deep donor, probably related to the divacancy and to the C/sub i/O/sub i/ complex, are placed in the upper and lower half of the forbidden gap, respectively. This simple model explains quantitatively the data on resistivity and Hall coefficient of each set of samples up to the fluence of /spl ap/10/sup 14/ n/cm/sup 2/.

Low cost Czochralski crystal growing technology. Near implementation of the flat plate photovoltaic cost reduction of the low cost solar array project

NASA Technical Reports Server (NTRS)

Roberts, E. G.

1980-01-01

Equipment developed for the manufacture of over 100 kg of silicon ingot from one crucible by rechanging from another crucible is described. Attempts were made to eliminate the cost of raising the furnace temperature to 250 C above the melting point of silicon by using an RF coil to melt polycrystalline silicon rod as a means of rechanging the crucible. Microprocessor control of the straight growth process was developed and domonstrated for both 4 inch and 6 inch diameter. Both meltdown and melt stabilization processes were achieved using operator prompting through the microprocessor. The use of the RF work coil in poly rod melting as a heat sink in the accelerated growth process was unsuccessful. The total design concept for fabrication and interfacing of the total cold crucible system was completed.

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

1984-01-01

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

High resolution synchrotron X-radiation diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals

NASA Technical Reports Server (NTRS)

Steiner, Bruce; Dobbyn, Ronald C.; Black, David; Burdette, Harold; Kuriyama, Masao; Fripp, Archibald; Simchik, Richard

1991-01-01

Irregularities in three crystals grown in space and in four terrestrial crystals grown under otherwise comparable conditions have been observed in high resolution diffraction imaging. The images provide important new clues to the nature and origins of irregularities in each crystal. For two of the materials, mercuric iodide and lead tin telluride, more than one phase (an array of non-diffracting inclusions) was observed in terrestrial samples; but the formation of these multiple phases appears to have been suppressed in directly comparable crystals grown in microgravity. The terrestrial seed crystal of triglycine sulfate displayed an unexpected layered structure, which propagated during directly comparable space growth. Terrestrial Bridgman regrowth of gallium arsenide revealed a mesoscopic structure substantially different from that of the original Czochralski material. A directly comparable crystal is to be grown shortly in space.

Luminescence and scintillation properties of liquid phase epitaxy grown Y2SiO5:Ce single crystalline films

NASA Astrophysics Data System (ADS)

Wantong, Kriangkrai; Yawai, Nattasuda; Chewpraditkul, Weerapong; Kucera, Miroslav; Hanus, Martin; Nikl, Martin

2017-06-01

Luminescence and scintillation properties of Y2SiO5:Ce single crystalline film (YSO:Ce-LPE) grown by the liquid phase epitaxy technique are investigated and compared to the bulk Czochralski-grown YSO:Ce single crystal (YSO:Ce-SC). The light yield (LY) and energy resolution are measured using an R6231 photomultiplier under excitation with α - and γ- rays. At 662 keV γ- rays, the LY value of 12,410 ph/MeV obtained for YSO:Ce -LPE is lower than that of 20,150 ph/MeV for YSO:Ce -SC whereas the comparable LY value and energy resolution are obtained under excitation with 5.5 MeV α- rays. The ratio of LY under excitation with α- and γ- rays (α/γ ratio) is determined. Dependence of LY on an amplifier shaping time (0.5-12 μs) is also measured.

Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

DOE PAGES

Young, David L.; Lee, Benjamin G.; Fogel, Derek; ...

2017-09-26

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defectsmore » in the SiO 2, compared with B dopants, and account for the excellent passivation.« less

Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

NASA Astrophysics Data System (ADS)

Tomizawa, Yuka; Imamura, Tetsuya; Soeda, Masaya; Ikeda, Yoshinori; Shiro, Takashi

2015-08-01

Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si-wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram® Si paste/ink were better than those of the reference cell.

Titanium in silicon as a deep level impurity

NASA Technical Reports Server (NTRS)

Chen, J.-W.; Milnes, A. G.; Rohatgi, A.

1979-01-01

Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 x 10 to the 14th per cu cm. It is reported that Hall measurements after diffusion show conversion of lightly doped p-type Si to n-type due to a Ti donor level at E sub c -0.22 eV. In addition, in DLTS measurements of n(+)p structures this level shows as an electron (minority carrier) trap at E sub c -0.26 eV with an electron capture cross section of about 3 x 10 to the -15th per sq cm at 300 K. Finally, a Ti electrically active concentration of about 1.35 x 10 to the 13th per cu cm in p type Si results in a minority carrier (electron) lifetime of 50 nsec at 300 K.

Growth, spectroscopy and lasing of the Yb-doped monoclinic Gd2SiO5 in the prospect of hydrogen laser cooling with Lyman-α radiation

NASA Astrophysics Data System (ADS)

Cabaret, L.; Robert, J.; Lebbou, K.; Brenier, A.; Cabane, H.

2016-12-01

We have grown good optical quality 10% Yb-doped Gd2SiO5 monocrystal by the Czochralski technique. The Yb segregation coefficient was measured to be 0.747. In agreement with the monoclinic symmetry of the host, the Yb fluorescence extrema were found to deviate from the Nm and Ng principal axes and a fourth spectroscopic parameter representing the rotation of the fluorescence distribution was introduced for a full description. Diode pumped laser operation at Brewster incidence was demonstrated to be significantly more efficient if the lasing propagation corresponds to the maximum fluorescence inside the crystal. We obtained a laser emission tunable between 1079 and 1100 nm, showing that our crystal is the best choice for the application to the production of QCW Lyman-α radiation by resonant four-wave-mixing in mercury vapor.

Paramagnetic resonance and susceptibility of ilmenite, FeTiO3 crystal

NASA Technical Reports Server (NTRS)

Mcdonald, P. F.; Parasiris, A.; Pandey, R. K.; Gries, B. L.; Kirk, W. P.

1991-01-01

Large high-purity single crystals of FeTiO3 with ilmenite structure have been grown from a stoichiometric melt of Fe2O3 and TiO2 under an inert atmosphere using the modified Czochralski technique. Susceptibility and X-band paramagnetic resonance studies have been performed. Susceptibility measurements indicate a Neel temperature of about 59 K. The paramagnetic resonance spectrum for magnetic field perpendicular to the crystal c axis consists of a portion of a single, very intense approximately Lorentzian absorption line with its peak at about 600 G and half width at half maximum almost 1200 G. The absorption extends to zero magnetic field. For magnetic field approximately parallel to the c axis, the paramagnetic absorption is much smaller and may be considered a superposition of two approximately Lorentzian line shapes. The magnetic resonance measurements indicate a weak temperature dependence and large angular anisotropy.

Electrooptic crystal growth and properties

NASA Astrophysics Data System (ADS)

1994-02-01

A new member in the tungsten-bronze family of ferroelectric lead potassium niobate (PKN), with general formula Pb(1-x)K(2x)Nb2O6, has been grown as bulk single crystal. Growth of PKN with charge composition x = 0.23 has been achieved using the Czochralski technique of crystal pulling. Large diameter boules were grown in platinum crucibles at temperatures between 1280 and 1300 C. Crystallographic studies were conducted using x ray diffraction techniques. The samples were characterized for ferroelectric properties between 25 and 600 C and for optical absorption. This paper presents the crystal synthesis and the results of ferroelectric and optical characterization. Bulk single crystals of potassium tantalate niobate, KTa(1-x)Nb(x)O3, ferroelectric with different values of Ta/Nb ratios have been grown by temperature gradient transport technique (TGTT). A second attached paper presents the results of the crystal growth experiments, ferroelectric characterization techniques, and properties of potassium tantalate niobate crystals.

Titanium-doped sapphire laser research and design study

NASA Technical Reports Server (NTRS)

Moulton, Peter F.

1987-01-01

Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.

Excimer laser annealing: A gold process for CZ silicon junction formation

NASA Technical Reports Server (NTRS)

Wong, David C.; Bottenberg, William R.; Byron, Stanley; Alexander, Paul

1987-01-01

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Oxygen in GaAs - Direct and indirect effects

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

1984-01-01

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Solar silicon via improved and expanded metallurgical silicon technology

NASA Technical Reports Server (NTRS)

Hunt, L. P.; Dosaj, V. D.; Mccormick, J. R.

1977-01-01

A completed preliminary survey of silica sources indicates that sufficient quantities of high-purity quartz are available in the U.S. and Canada to meet goals. Supply can easily meet demand for this little-sought commodity. Charcoal, as a reductant for silica, can be purified to a sufficient level by high-temperature fluorocarbon treatment and vacuum processing. High-temperature treatment causes partial graphitization which can lead to difficulty in smelting. Smelting of Arkansas quartz and purified charcoal produced kilogram quantities of silicon having impurity levels generally much lower than in MG-Si. Half of the goal was met of increasing the boron resistivity from 0.03 ohm-cm in metallurgical silicon to 0.3 ohm-cm in solar silicon. A cost analysis of the solidification process indicate $3.50-7.25/kg Si for the Czochralski-type process and $1.50-4.25/kg Si for the Bridgman-type technique.

Process Research on Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Laser annealing of ion implanted CZ silicon for solar cell junction formation

NASA Technical Reports Server (NTRS)

Katzeff, J. S.

1981-01-01

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

A habitat suitability model for Chinese sturgeon determined using the generalized additive method

NASA Astrophysics Data System (ADS)

Yi, Yujun; Sun, Jie; Zhang, Shanghong

2016-03-01

The Chinese sturgeon is a type of large anadromous fish that migrates between the ocean and rivers. Because of the construction of dams, this sturgeon's migration path has been cut off, and this species currently is on the verge of extinction. Simulating suitable environmental conditions for spawning followed by repairing or rebuilding its spawning grounds are effective ways to protect this species. Various habitat suitability models based on expert knowledge have been used to evaluate the suitability of spawning habitat. In this study, a two-dimensional hydraulic simulation is used to inform a habitat suitability model based on the generalized additive method (GAM). The GAM is based on real data. The values of water depth and velocity are calculated first via the hydrodynamic model and later applied in the GAM. The final habitat suitability model is validated using the catch per unit effort (CPUEd) data of 1999 and 2003. The model results show that a velocity of 1.06-1.56 m/s and a depth of 13.33-20.33 m are highly suitable ranges for the Chinese sturgeon to spawn. The hydraulic habitat suitability indexes (HHSI) for seven discharges (4000; 9000; 12,000; 16,000; 20,000; 30,000; and 40,000 m3/s) are calculated to evaluate integrated habitat suitability. The results show that the integrated habitat suitability reaches its highest value at a discharge of 16,000 m3/s. This study is the first to apply a GAM to evaluate the suitability of spawning grounds for the Chinese sturgeon. The study provides a reference for the identification of potential spawning grounds in the entire basin.

Increase in quantity and quality of suitable areas for invasive species as climate changes.

PubMed

Bertelsmeier, Cleo; Luque, Gloria M; Courchamp, Franck

2013-12-01

As climatically suitable range projections become increasingly used to assess distributions of species, we recommend systematic assessments of the quality of habitat in addition to the classical binary classification of habitat. We devised a method to assess occurrence probability, captured by a climatic suitability index, through which we could determine variations in the quality of potential habitat. This relative risk assessment circumvents the use of an arbitrary suitability threshold. We illustrated our method with 2 case studies on invasive ant species. We estimated invasion potential of the destroyer ant (Monomorium destructor) and the European fire ant (Myrmica rubra) on a global scale currently and by 2080 with climate change. We found that 21.1% of the world's landmass currently has a suitable climate for the destroyer ant and 16% has a suitable climate for European fire ant. Our climatic suitability index showed that both ant species would benefit from climate change, but in different ways. The size of the potential distribution increased by 35.8% for the destroyer ant. Meanwhile, the total area of potential distribution remained the same for the European fire ant (>0.05%), but the level of climatic suitability within this range increased greatly and led to an improvement in habitat quality (i.e., of invasive species' establishment likelihood). Either through quantity or quality of suitable areas, both invasive ant species are likely to increase the extent of their invasion in the future, following global climate change. Our results show that species may increase their range if either more areas become suitable or if the available areas present improved suitability. Studies in which an arbitrary suitability threshold was used may overlook changes in area quality within climatically suitable areas and as a result reach incorrect predictions. Incremento de la Cantidad y Calidad de Áreas Idóneas para Especies Invasoras a Medida que Cambia el Clima. © 2013 Society for Conservation Biology.

Selection of suitable e-learning approach using TOPSIS technique with best ranked criteria weights

NASA Astrophysics Data System (ADS)

Mohammed, Husam Jasim; Kasim, Maznah Mat; Shaharanee, Izwan Nizal Mohd

2017-11-01

This paper compares the performances of four rank-based weighting assessment techniques, Rank Sum (RS), Rank Reciprocal (RR), Rank Exponent (RE), and Rank Order Centroid (ROC) on five identified e-learning criteria to select the best weights method. A total of 35 experts in a public university in Malaysia were asked to rank the criteria and to evaluate five e-learning approaches which include blended learning, flipped classroom, ICT supported face to face learning, synchronous learning, and asynchronous learning. The best ranked criteria weights are defined as weights that have the least total absolute differences with the geometric mean of all weights, were then used to select the most suitable e-learning approach by using TOPSIS method. The results show that RR weights are the best, while flipped classroom approach implementation is the most suitable approach. This paper has developed a decision framework to aid decision makers (DMs) in choosing the most suitable weighting method for solving MCDM problems.

Multi-criteria Decision Analysis to Model Ixodes ricinus Habitat Suitability.

PubMed

Rousseau, Raphaël; McGrath, Guy; McMahon, Barry J; Vanwambeke, Sophie O

2017-09-01

Tick-borne diseases present a major threat to both human and livestock health throughout Europe. The risk of infection is directly related to the presence of its vector. Thereby it is important to know their distribution, which is strongly associated with environmental factors: the presence and availability of a suitable habitat, of a suitable climate and of hosts. The present study models the habitat suitability for Ixodes ricinus in Ireland, where data on tick distribution are scarce. Tick habitat suitability was estimated at a coarse scale (10 km) with a multi-criteria decision analysis (MCDA) method according to four different scenarios (depending on the variables used and on the weights granted to each of them). The western part of Ireland and the Wicklow mountains in the East were estimated to be the most suitable areas for I. ricinus in the island. There was a good level of agreement between results from the MCDA and recorded tick presence. The different scenarios did not affect the spatial outputs substantially. The current study suggests that tick habitat suitability can be mapped accurately at a coarse scale in a data-scarce context using knowledge-based methods. It can serve as a guideline for future countrywide sampling that would help to determine local risk of tick presence and refining knowledge on tick habitat suitability in Ireland.

Crucible-free pulling of germanium crystals

NASA Astrophysics Data System (ADS)

Wünscher, Michael; Lüdge, Anke; Riemann, Helge

2011-03-01

Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal and floating zone (FZ) methods, which are widely used for silicon growth, are hardly known to be investigated for germanium. The germanium melt is more than twice as dense as liquid silicon, which could destabilize a floating zone. Additionally, the lower melting point and the related lower radiative heat loss is shown to reduce the stability especially of the FZ process with the consequence of a screw-like crystal growth. We found that the lower heat radiation of Ge can be compensated by the increased convective cooling of a helium atmosphere instead of the argon ambient. Under these conditions, the screw-like growth could be avoided. Unfortunately, the helium cooling deteriorates the melting behavior of the feed rod. Spikes appear along the open melt front, which touch on the induction coil. In order to improve the melting behavior, we used a lamp as a second energy source as well as a mixture of Ar and He. With this, we found a final solution for growing stable crystals from germanium by using both gases in different parts of the furnace. The experimental work is accompanied by the simulation of the stationary temperature field. The commercially available software FEMAG-FZ is used for axisymmetric calculations. Another tool for process development is the lateral photo-voltage scanning (LPS), which can determine the shape of the solid-liquid phase boundary by analyzing the growth striations in a lateral cut of a grown crystal. In addition to improvements of the process, these measurements can be compared with the calculated results and, hence, conduce to validate the calculation.

Assessing ecoregional-scale habitat suitability index models for priority landbirds

Treesearch

John M. Tirpak; D. Todd Jones-Farrand; Frank R. Thompson; Daniel J. Twedt; Charles K. Baxter; Jane A. Fitzgerald; William B. Uihlein

2009-01-01

Emerging methods in habitat and wildlife population modeling promise new horizons in conservation but only if these methods provide robust population-habitat linkages. We used Breeding Bird Survey (BBS) data to verify and validate newly developed habitat suitability index (HSI) models for 40 priority landbird species in the Central Hardwoods and West Gulf Coastal Plain...

Review methods for image segmentation from computed tomography images

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamat, Nurwahidah; Rahman, Wan Eny Zarina Wan Abdul; Soh, Shaharuddin Cik

Image segmentation is a challenging process in order to get the accuracy of segmentation, automation and robustness especially in medical images. There exist many segmentation methods that can be implemented to medical images but not all methods are suitable. For the medical purposes, the aims of image segmentation are to study the anatomical structure, identify the region of interest, measure tissue volume to measure growth of tumor and help in treatment planning prior to radiation therapy. In this paper, we present a review method for segmentation purposes using Computed Tomography (CT) images. CT images has their own characteristics that affectmore » the ability to visualize anatomic structures and pathologic features such as blurring of the image and visual noise. The details about the methods, the goodness and the problem incurred in the methods will be defined and explained. It is necessary to know the suitable segmentation method in order to get accurate segmentation. This paper can be a guide to researcher to choose the suitable segmentation method especially in segmenting the images from CT scan.« less

A Way to Select Electrical Sheets of the Segment Stator Core Motors.

NASA Astrophysics Data System (ADS)

Enomoto, Yuji; Kitamura, Masashi; Sakai, Toshihiko; Ohara, Kouichiro

The segment stator core, high density winding coil, high-energy-product permanent magnet are indispensable technologies in the development of a compact and also high efficient motors. The conventional design method for the segment stator core mostly depended on experienced knowledge of selecting a suitable electromagnetic material, far from optimized design. Therefore, we have developed a novel design method in the selection of a suitable electromagnetic material based on the correlation evaluation between the material characteristics and motor performance. It enables the selection of suitable electromagnetic material that will meet the motor specification.

Assessment of gadolinium calcium oxoborate (GdCOB) for laser applications

NASA Astrophysics Data System (ADS)

Bajor, A. L.; Kisielewski, J.; Kłos, A.; Kopczyński, K.; Łukasiewicz, T.; Mierczyk, J.; Młyńczak, J.

2011-12-01

Increasing demand for growing high quality laser crystals puts a question about their most important parameters that one should concentrate on to get a desired product which will exhibit best properties in practical use. And by no means, this is a simple question. Apart of the usual lasing properties associated with a special dopant in the host material itself, one needs to consider another two lasing phenomena, namely second (SHG) and higher harmonic generation, and self-frequency doubling (SFD). Not necessarily all of these three can meet altogether in the same host material to yield in its best appearance in every case. We have made a review of basic properties of gadolinium oxoborate GdCa4O(BO3)3 (GdCOB) crystal and came to the conclusion that, currently, as a host material this is probably the best in all of its lasing applications. Although GdCOB has low thermal conductivity, which requires a suitable cooling, on the other hand it has got small thermo-optic coefficients which govern good operation in SHG and SFD experiments. Two inch dia. Nd-doped crystals were grown by the Czochralski technique. Since a large discrepancy in the literature exists on exact values of nonlinear coefficients, one is never sure about this whether theoretically predicted phase-matching angles (PMA) are those that are really optimal. Besides, none has yet measured the values of nonlinear coefficients as a function of doping concentration. Therefore we have not decided to cut numerous differently oriented samples for generation of different wavelengths in SHG and SFD, but rather tried to generate different wavelengths from the same samples. We have also not paid special attention to get highest possible conversion efficiencies. However, we have concentrated our attention on potential use of the core region in laser technique. Unlike in YAG crystals, when the core is by all means a parasitic structure, we discovered that the core region in GdCOB, that majority of investigators are even not aware of its presence in the crystal, can be also useful in laser technique. According to our best knowledge, a SHG of red light in this work is the second reported case in the world-wide literature.

Validation of miRNA genes suitable as reference genes in qPCR analyses of miRNA gene expression in Atlantic salmon (Salmo salar).

PubMed

Johansen, Ilona; Andreassen, Rune

2014-12-23

MicroRNAs (miRNAs) are an abundant class of endogenous small RNA molecules that downregulate gene expression at the post-transcriptional level. They play important roles by regulating genes that control multiple biological processes, and recent years there has been an increased interest in studying miRNA genes and miRNA gene expression. The most common method applied to study gene expression of single genes is quantitative PCR (qPCR). However, before expression of mature miRNAs can be studied robust qPCR methods (miRNA-qPCR) must be developed. This includes identification and validation of suitable reference genes. We are particularly interested in Atlantic salmon (Salmo salar). This is an economically important aquaculture species, but no reference genes dedicated for use in miRNA-qPCR methods has been validated for this species. Our aim was, therefore, to identify suitable reference genes for miRNA-qPCR methods in Salmo salar. We used a systematic approach where we utilized similar studies in other species, some biological criteria, results from deep sequencing of small RNAs and, finally, experimental validation of candidate reference genes by qPCR to identify the most suitable reference genes. Ssa-miR-25-3p was identified as most suitable single reference gene. The best combinations of two reference genes were ssa-miR-25-3p and ssa-miR-455-5p. These two genes were constitutively and stably expressed across many different tissues. Furthermore, infectious salmon anaemia did not seem to affect their expression levels. These genes were amplified with high specificity, good efficiency and the qPCR assays showed a good linearity when applying a simple cybergreen miRNA-PCR method using miRNA gene specific forward primers. We have identified suitable reference genes for miRNA-qPCR in Atlantic salmon. These results will greatly facilitate further studies on miRNA genes in this species. The reference genes identified are conserved genes that are identical in their mature sequence in many aquaculture species. Therefore, they may also be suitable as reference genes in other teleosts. Finally, the systematic approach used in our study successfully identified suitable reference genes, suggesting that this may be a useful strategy to apply in similar validation studies in other aquaculture species.

Assessing Non-Technical Site Suitability Criteria for Stormwater Capture, Treatment and Recharge

NASA Astrophysics Data System (ADS)

Eisenstein, W.

2016-12-01

This presentation will describe a new method for assessing non-technical site suitability criteria for the siting of stormwater capture, treatment and recharge (or stormwater CTR) facilities in Sonoma County, California, USA. "Non-technical site suitability criteria" include issues such as community acceptance, aesthetics, nuisances and hazards, and compatibility with neighboring land uses, and are distinguished from "technical criteria" such as hydrology and soil characteristics that are the traditional subject of suitability analyses. Non-technical criteria are rarely, if ever, considered in formal siting suitability studies conducted by agencies and municipalities, yet can be fatal to the prospects of a given project's construction if not identified and mitigated. The researchers developed a new method for identifying and spatially characterizing relevant non-technical criteria through interviews and questionnaires with community stakeholders, and introducing those criteria into a spatial multi-criteria decision analysis framework that assesses site suitabilty across a study watershed (the Upper Petaluma River watershed in Sonoma County).

An approach for land suitability evaluation using geostatistics, remote sensing, and geographic information system in arid and semiarid ecosystems.

PubMed

Emadi, Mostafa; Baghernejad, Majid; Pakparvar, Mojtaba; Kowsar, Sayyed Ahang

2010-05-01

This study was undertaken to incorporate geostatistics, remote sensing, and geographic information system (GIS) technologies to improve the qualitative land suitability assessment in arid and semiarid ecosystems of Arsanjan plain, southern Iran. The primary data were obtained from 85 soil samples collected from tree depths (0-30, 30-60, and 60-90 cm); the secondary information was acquired from the remotely sensed data from the linear imaging self-scanner (LISS-III) receiver of the IRS-P6 satellite. Ordinary kriging and simple kriging with varying local means (SKVLM) methods were used to identify the spatial dependency of soil important parameters. It was observed that using the data collected from the spectral values of band 1 of the LISS-III receiver as the secondary variable applying the SKVLM method resulted in the lowest mean square error for mapping the pH and electrical conductivity (ECe) in the 0-30-cm depth. On the other hand, the ordinary kriging method resulted in a reliable accuracy for the other soil properties with moderate to strong spatial dependency in the study area for interpolation in the unstamped points. The parametric land suitability evaluation method was applied on the density points (150 x 150 m(2)) instead of applying on the limited representative profiles conventionally, which were obtained by the kriging or SKVLM methods. Overlaying the information layers of the data was used with the GIS for preparing the final land suitability evaluation. Therefore, changes in land characteristics could be identified in the same soil uniform mapping units over a very short distance. In general, this new method can easily present the squares and limitation factors of the different land suitability classes with considerable accuracy in arbitrary land indices.

Development and validation of a high throughput assay for the quantification of multiple green tea-derived catechins in human plasma.

PubMed

Mawson, Deborah H; Jeffrey, Keon L; Teale, Philip; Grace, Philip B

2018-06-19

A rapid, accurate and robust method for the determination of catechin (C), epicatechin (EC), gallocatechin (GC), epigallocatechin (EGC), catechin gallate (Cg), epicatechin gallate (ECg), gallocatechin gallate (GCg) and epigallocatechin gallate (EGCg) concentrations in human plasma has been developed. The method utilises protein precipitation following enzyme hydrolysis, with chromatographic separation and detection using reversed-phase liquid chromatography - tandem mass spectrometry (LC-MS/MS). Traditional issues such as lengthy chromatographic run times, sample and extract stability, and lack of suitable internal standards have been addressed. The method has been evaluated using a comprehensive validation procedure, confirming linearity over appropriate concentration ranges, and inter/intra batch precision and accuracies within suitable thresholds (precisions within 13.8% and accuracies within 12.4%). Recoveries of analytes were found to be consistent between different matrix samples, compensated for using suitable internal markers and within the performance of the instrumentation used. Similarly, chromatographic interferences have been corrected using the internal markers selected. Stability of all analytes in matrix is demonstrated over 32 days and throughout extraction conditions. This method is suitable for high throughput sample analysis studies. This article is protected by copyright. All rights reserved.

Experimental Evaluation of Suitability of Selected Multi-Criteria Decision-Making Methods for Large-Scale Agent-Based Simulations

PubMed Central

2016-01-01

Multi-criteria decision-making (MCDM) can be formally implemented by various methods. This study compares suitability of four selected MCDM methods, namely WPM, TOPSIS, VIKOR, and PROMETHEE, for future applications in agent-based computational economic (ACE) models of larger scale (i.e., over 10 000 agents in one geographical region). These four MCDM methods were selected according to their appropriateness for computational processing in ACE applications. Tests of the selected methods were conducted on four hardware configurations. For each method, 100 tests were performed, which represented one testing iteration. With four testing iterations conducted on each hardware setting and separated testing of all configurations with the–server parameter de/activated, altogether, 12800 data points were collected and consequently analyzed. An illustrational decision-making scenario was used which allows the mutual comparison of all of the selected decision making methods. Our test results suggest that although all methods are convenient and can be used in practice, the VIKOR method accomplished the tests with the best results and thus can be recommended as the most suitable for simulations of large-scale agent-based models. PMID:27806061

Comparision of the different probability distributions for earthquake hazard assessment in the North Anatolian Fault Zone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yilmaz, Şeyda, E-mail: seydayilmaz@ktu.edu.tr; Bayrak, Erdem, E-mail: erdmbyrk@gmail.com; Bayrak, Yusuf, E-mail: bayrak@ktu.edu.tr

In this study we examined and compared the three different probabilistic distribution methods for determining the best suitable model in probabilistic assessment of earthquake hazards. We analyzed a reliable homogeneous earthquake catalogue between a time period 1900-2015 for magnitude M ≥ 6.0 and estimated the probabilistic seismic hazard in the North Anatolian Fault zone (39°-41° N 30°-40° E) using three distribution methods namely Weibull distribution, Frechet distribution and three-parameter Weibull distribution. The distribution parameters suitability was evaluated Kolmogorov-Smirnov (K-S) goodness-of-fit test. We also compared the estimated cumulative probability and the conditional probabilities of occurrence of earthquakes for different elapsed timemore » using these three distribution methods. We used Easyfit and Matlab software to calculate these distribution parameters and plotted the conditional probability curves. We concluded that the Weibull distribution method was the most suitable than other distribution methods in this region.« less

Correlation of Non-proportionality and Scintillation Properties with Cerium Concentration in YAlO 3:Ce

DOE PAGES

Donnald, Samuel B.; Williams, Richard; Melcher, Charles L.; ...

2018-04-19

Cerium doped YAlO3 (YAP:Ce) is an interesting oxide scintillator in that it exhibits a wider range of light yield non-proportionality on a sample-to-sample basis than most other well-known oxide scintillators. In general, most oxide materials, such as BGO and LSO:Ce, are thought to have an intrinsic proportional response that is nearly constant between samples and independent of growth conditions. Since light yield nonproportionality is responsible for degrading the achievable energy resolution of all known scintillators, it is important to understand what contributes to the behavior. In this study, in an attempt to understand if the phenomenon can be affected bymore » growth parameters or by other means, seven samples of YAP:Ce were collected from various sources, and eight samples were grown inhouse using the Czochralski method. Based on optical and scintillation measurement as well as direct measurement of the cerium concentration, it was determined that the light yield proportionality in YAlO3:Ce is strongly related to the cerium concentration. Samples that were found to have a higher relative cerium concentration displayed a more proportional light yield response. In addition, it was determined that samples with a higher cerium concentration also exhibit a faster decay time and an enhanced energy resolution when compared to samples with less cerium. Finally, it was also determined that growth in a reducing atmosphere can effectively suppress a parasitic optical absorption band.« less

Structural, mechanical and light yield characterisation of heat treated LYSO:Ce single crystals for medical imaging applications

NASA Astrophysics Data System (ADS)

Mengucci, P.; André, G.; Auffray, E.; Barucca, G.; Cecchi, C.; Chipaux, R.; Cousson, A.; Davì, F.; Di Vara, N.; Rinaldi, D.; Santecchia, E.

2015-06-01

Five single crystals of cerium-doped lutetium yttrium oxyorthosilicate (LYSO:Ce) grown by the Czochralski method were submitted to structural characterisation by X-ray (XRD) and neutron (ND) diffraction, scanning (SEM) and transmission (TEM) electron microscopy and energy dispersive microanalysis (EDS). The Ultimate Tensile Strength (UTS), the Young Modulus (YM) and the Light Yield (LY) of the samples were also measured in order to correlate the mechanical and the optical behaviour of the crystals with the characteristics of their microstructure. Two of the samples analysed were also heat treated at 300 °C for 10 h to evidence possible variations induced by the temperature in the optical and mechanical response of the crystals. Results showed that the mean compositional variations evidenced by the structural analyses do not affect the mechanical and optical behaviour of the samples. On the contrary, the thermal treatment could induce the formation of coherent spherical particles (size 10 to 15 nm), not uniformly distributed inside the sample, that strongly reduce the UTS and YM values, but it does not affect the optical response of the crystal. This latter result was attributed to the low value of the heating temperature (300 °C) that is not sufficiently high to induce annealing of the oxygen vacancies traps that are responsible of the deterioration of the scintillation properties of the LYSO:Ce crystals. This study was carried out in the framework of the Crystal Clear Collaboration (CCC).

Correlation of Non-proportionality and Scintillation Properties with Cerium Concentration in YAlO 3:Ce

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donnald, Samuel B.; Williams, Richard; Melcher, Charles L.

Cerium doped YAlO3 (YAP:Ce) is an interesting oxide scintillator in that it exhibits a wider range of light yield non-proportionality on a sample-to-sample basis than most other well-known oxide scintillators. In general, most oxide materials, such as BGO and LSO:Ce, are thought to have an intrinsic proportional response that is nearly constant between samples and independent of growth conditions. Since light yield nonproportionality is responsible for degrading the achievable energy resolution of all known scintillators, it is important to understand what contributes to the behavior. In this study, in an attempt to understand if the phenomenon can be affected bymore » growth parameters or by other means, seven samples of YAP:Ce were collected from various sources, and eight samples were grown inhouse using the Czochralski method. Based on optical and scintillation measurement as well as direct measurement of the cerium concentration, it was determined that the light yield proportionality in YAlO3:Ce is strongly related to the cerium concentration. Samples that were found to have a higher relative cerium concentration displayed a more proportional light yield response. In addition, it was determined that samples with a higher cerium concentration also exhibit a faster decay time and an enhanced energy resolution when compared to samples with less cerium. Finally, it was also determined that growth in a reducing atmosphere can effectively suppress a parasitic optical absorption band.« less

Three methods for isolating viable anthozoan endoderm cells with their intracellular symbiotic dinoflagellates

NASA Astrophysics Data System (ADS)

Gates, R. D.; Muscatine, L.

1992-09-01

Three maceration methods are described for the isolation of single endoderm cells from marine cnidarians. Two are enzymatic treatments suitable for fleshy anthozoans such as sea anemones and zoanthids. The third employs calcium free sea water and is suitable for stony corals. The viability and morphology of the endoderm cells is described using fluorogenic dyes and scanning and transmission electron microscopy.

3D Molding of Veneers by Mechanical and Pneumatic Methods

PubMed Central

Gaff, Milan; Gašparík, Miroslav

2017-01-01

This paper deals with the influence of selected methods (mechanical and pneumatic) as well as various factors (wood species, moisture content, veneer shape, punch diameter, laminating foil thickness, holding method, plasticizing) on 3D molding of veneers. 3D molding was evaluated on the basis of maximum deflection of birch and beech veneers. Cracks and warping edges were also evaluated in selected groups of mechanical molding. Mechanical methods tested veneers with various treatments (steaming, water and ammonia plasticizing and lamination). The pneumatic method was based on veneer shaping using air pressure. The results indicate that birch veneers are more suitable for 3D molding. The differences between the mechanical and pneumatic methods were not considerable. The most suitable method for mechanical 3D molding was the veneer lamination by polyethylene foils with thicknesses of 80 and 125 μm, inasmuch as these achieved better results than veneer plasticized by steam. The occurrence of cracks was more frequent in beech veneers, whereas, edge warping occurred at similar rates for both wood species and depends rather on holding method during 3D molding. Use of the ammonia solution is more suitable and there occurs no marked increase in moisture as happens when soaking in water. PMID:28772684

Land suitability assessment for wind power plant site selection using ANP-DEMATEL in a GIS environment: case study of Ardabil province, Iran.

PubMed

Azizi, Ali; Malekmohammadi, Bahram; Jafari, Hamid Reza; Nasiri, Hossein; Amini Parsa, Vahid

2014-10-01

Wind energy is a renewable energy resource that has increased in usage in most countries. Site selection for the establishment of large wind turbines, called wind farms, like any other engineering project, requires basic information and careful planning. This study assessed the possibility of establishing wind farms in Ardabil province in northwestern Iran by using a combination of analytic network process (ANP) and decision making trial and evaluation laboratory (DEMATEL) methods in a geographical information system (GIS) environment. DEMATEL was used to determine the criteria relationships. The weights of the criteria were determined using ANP and the overlaying process was done on GIS. Using 13 information layers in three main criteria including environmental, technical and economical, the land suitability map was produced and reclassified into 5 equally scored divisions from least suitable to most suitable areas. The results showed that about 6.68% of the area of Ardabil province is most suitable for establishment of wind turbines. Sensitivity analysis shows that significant portions of these most suitable zones coincide with suitable divisions of the input layers. The efficiency and accuracy of the hybrid model (ANP-DEMATEL) was evaluated and the results were compared to the ANP model. The sensitivity analysis, map classification, and factor weights for the two methods showed satisfactory results for the ANP-DEMATEL model in wind power plant site selection.

Regional prediction of basin-scale brown trout habitat suitability

NASA Astrophysics Data System (ADS)

Ceola, S.; Pugliese, A.

2014-09-01

In this study we propose a novel method for the estimation of ecological indices describing the habitat suitability of brown trout (Salmo trutta). Traditional hydrological tools are coupled with an innovative regional geostatistical technique, aiming at the prediction of the brown trout habitat suitability index where partial or totally ungauged conditions occur. Several methods for the assessment of ecological indices are already proposed in the scientific literature, but the possibility of exploiting a geostatistical prediction model, such as Topological Kriging, has never been investigated before. In order to develop a regional habitat suitability model we use the habitat suitability curve, obtained from measured data of brown trout adult individuals collected in several river basins across the USA. The Top-kriging prediction model is then employed to assess the spatial correlation between upstream and downstream habitat suitability indices. The study area is the Metauro River basin, located in the central part of Italy (Marche region), for which both water depth and streamflow data were collected. The present analysis focuses on discharge values corresponding to the 0.1-, 0.5-, 0.9-empirical quantiles derived from flow-duration curves available for seven gauging stations located within the study area, for which three different suitability indices (i.e. ψ10, ψ50 and ψ90) are evaluated. The results of this preliminary analysis are encouraging showing Nash-Sutcliffe efficiencies equal to 0.52, 0.65, and 0.69, respectively.

Water Walls for Life Support

NASA Technical Reports Server (NTRS)

Hammoudeh, Mona (Inventor); Flynn, Michael T. (Inventor); Gormly, Sherwin J. (Inventor); Richardson, Tra-My Justine (Inventor)

2017-01-01

A method and associated system for processing waste gases, liquids and solids, produced by human activity, to separate (i) liquids suitable for processing to produce potable water, (ii) solids and liquids suitable for construction of walls suitable for enclosing a habitat volume and for radiation shielding, and (iii) other fluids and solids that are not suitable for processing. A forward osmosis process and a reverse osmosis process are sequentially combined to reduce fouling and to permit accumulation of different processable substances. The invention may be used for long term life support of human activity.

Gis-Based Solar and Wind Turbine Site Selection Using Multi-Criteria Analysis: Case Study Tehran, Iran

NASA Astrophysics Data System (ADS)

Sadeghi, M.; Karimi, M.

2017-09-01

Renewable energy has less negative impacts on environment than fossil fuels. Iran has many resources for renewable energy exploitation but because of their high price, it has not been developed. Site selection is an important step for utilizing large investments like solar farms and wind turbines. Multi-criteria evaluation methods are commonly used for site selection. The purpose of this paper is to determine suitable sites for solar farm and wind turbine using GIS and AHP in Tehran, in order to generate a distributed network to increase power network stability. The final land suitability index was grouped in four categories as "most suitable", "suitable", "moderate" and "low suitable". As a result 94.61% (789939.63 km2) is low suitable, 4.47% (37337.17 km2) is moderate, 0.59% (4964.22 km2) is suitable and 0.32% (2680.70 km2) is the most suitable for building wind turbine and for solar farm, 44.07% (8116.88 km2) is low suitable, 12.81% (2359.79 km2) is moderate, 35.10% (6464.29 km2) is suitable and 8.02% (1477.28 km2) is the most suitable.

An iterative method for near-field Fresnel region polychromatic phase contrast imaging

NASA Astrophysics Data System (ADS)

Carroll, Aidan J.; van Riessen, Grant A.; Balaur, Eugeniu; Dolbnya, Igor P.; Tran, Giang N.; Peele, Andrew G.

2017-07-01

We present an iterative method for polychromatic phase contrast imaging that is suitable for broadband illumination and which allows for the quantitative determination of the thickness of an object given the refractive index of the sample material. Experimental and simulation results suggest the iterative method provides comparable image quality and quantitative object thickness determination when compared to the analytical polychromatic transport of intensity and contrast transfer function methods. The ability of the iterative method to work over a wider range of experimental conditions means the iterative method is a suitable candidate for use with polychromatic illumination and may deliver more utility for laboratory-based x-ray sources, which typically have a broad spectrum.

A New Method for Unconstrained Heart Rate Monitoring

DTIC Science & Technology

2001-10-25

members. However, care of bedridden elderly persons are not easy task, and this caused severe psychological and financial problems for other family...physical and mental conditions of bedridden elderly people at home and patients at hospitals and to contribute to the labor saving of the care and the...not suitable for home care of bedridden elderly people. Our method provides very small, simple and mechanically rugged device suitable for home

A rapid method for the extraction and analysis of carotenoids and other hydrophobic substances suitable for systems biology studies with photosynthetic bacteria.

PubMed

Bóna-Lovász, Judit; Bóna, Aron; Ederer, Michael; Sawodny, Oliver; Ghosh, Robin

2013-10-11

A simple, rapid, and inexpensive extraction method for carotenoids and other non-polar compounds present in phototrophic bacteria has been developed. The method, which has been extensively tested on the phototrophic purple non-sulphur bacterium Rhodospirillum rubrum, is suitable for extracting large numbers of samples, which is common in systems biology studies, and yields material suitable for subsequent analysis using HPLC and mass spectroscopy. The procedure is particularly suitable for carotenoids and other terpenoids, including quinones, bacteriochlorophyll a and bacteriopheophytin a, and is also useful for the analysis of polar phospholipids. The extraction procedure requires only a single step extraction with a hexane/methanol/water mixture, followed by HPLC using a Spherisorb C18 column, with a mobile phase consisting of acetone-water and a non-linear gradient of 50%-100% acetone. The method was employed for examining the carotenoid composition observed during microaerophilic growth of R. rubrum strains, and was able to determine 18 carotenoids, 4 isoprenoid-quinones, bacteriochlorophyll a and bacteriopheophytin a as well as four different phosphatidylglycerol species of different acyl chain compositions. The analytical procedure was used to examine the dynamics of carotenoid biosynthesis in the major and minor pathways operating simultaneously in a carotenoid biosynthesis mutant of R. rubrum.

Site suitability evaluation of an old operating landfill using AHP and GIS techniques and integrated hydrogeological and geophysical surveys.

PubMed

Saatsaz, Masoud; Monsef, Iman; Rahmani, Mostafa; Ghods, Abdolreza

2018-02-16

Because of the outdated methods of common landfill selection, it is imperative to reevaluate the usage suitability. To assess the suitability of the existing waste landfill in Zanjan, Iran, we have used a combination of the analytical hierarchy process (AHP) and GIS techniques, along with fieldwork surveys. Four major criteria and 12 subcriteria were considered, and the AHP was applied to assign the relative importance weights of criteria and subcriteria to each other. Finally, a landfill suitability map was generated and ranked based on the final suitability scores. The results show that the unsuitable areas are around Zanjan, in the middle parts of the plain. By contrast, the most suitable areas are uncultivated areas, located mostly in the west, north, and south. The results also indicate that the present landfill is a highly suitable site. After desk studies, geoelectrical surveys and infiltration measurements were conducted to make the final decision. Double-ring permeability tests confirm the landfill is an acceptable site. The electrical sounding shows that the leachate plume has a width of about ~ 450 m, spreads to a depth of about ~ 55 m, and migrates towards the northeast. Considering the groundwater depth, dry climate, and a low infiltration rate of the landfill soils, it can be concluded that leachate plumes will not contaminate groundwater within this decade. The proposed method can be implemented to reevaluate the suitability of any old operating reservoir such as oil reservoirs, petrol filling stations, heavy industrial tanks, and landfills, containing liquid hazardous materials.

Discreet passive explosive detection through 2-sided waveguided fluorescence

DOEpatents

Harper, Ross James [Stillwater, OK; la Grone, Marcus [Cushing, OK; Fisher, Mark [Stillwater, OK

2011-10-18

The current invention provides a passive sampling device suitable for collecting and detecting the presence of target analytes. In particular, the passive sampling device is suitable for detecting nitro-aromatic compounds. The current invention further provides a passive sampling device reader suitable for determining the collection of target analytes. Additionally, the current invention provides methods for detecting target analytes using the passive sampling device and the passive sampling device reader.

RADIATION DOSIMETER AND DOSIMETRIC METHODS

DOEpatents

Taplin, G.V.

1958-10-28

The determination of ionizing radiation by means of single fluid phase chemical dosimeters of the colorimetric type is presented. A single fluid composition is used consisting of a chlorinated hydrocarbon, an acidimetric dye, a normalizer and water. Suitable chlorinated hydrocarbons are carbon tetrachloride, chloroform, trichloroethylene, trichlorethane, ethylene dichioride and tetracbloroethylene. Suitable acidimetric indicator dyes are phenol red, bromcresol purple, and creosol red. Suitable normallzers are resorcinol, geraniol, meta cresol, alpha -tocopberol, and alpha -naphthol.

A method to assess the allocation suitability of recreational activities: An economic approach

NASA Astrophysics Data System (ADS)

Wang, Hsiao-Lin

1996-03-01

Most existing methods of planning focus on development of a recreational area; less consideration is placed on the allocation of recreational activities within a recreational area. Most existing research emphasizes the economic benefits of developing a recreational area; few authors assessed the allocation suitability of recreational activities from an economic point of view. The purpose of this work was to develop a model to assess the allocation suitability of recreational activities according to the application of a concept of analysis of cost and benefit under a premise of ecological concern. The model was verified with a case study of Taiwan. We suggest that the proposed model should form a critical part of recreational planning.

Polymer scaffold degradation control via chemical control

DOEpatents

Hedberg-Dirk, Elizabeth L.; Dirk, Shawn; Cicotte, Kirsten

2016-01-05

A variety of polymers and copolymers suitable for use as biologically compatible constructs and, as a non-limiting specific example, in the formation of degradable tissue scaffolds as well methods for synthesizing these polymers and copolymers are described. The polymers and copolymers have degradation rates that are substantially faster than those of previously described polymers suitable for the same uses. Copolymers having a synthesis route which enables one to fine tune the degradation rate by selecting the specific stoichiometry of the monomers in the resulting copolymer are also described. The disclosure also provides a novel synthesis route for maleoyl chloride which yields monomers suitable for use in the copolymer synthesis methods described herein.

Monitoring of monosaccharides, oligosaccharides, ethanol and glycerol during wort fermentation by biosensors, HPLC and spectrophotometry.

PubMed

Monošík, Rastislav; Magdolen, Peter; Stredanský, Miroslav; Šturdík, Ernest

2013-05-01

The aim of the present study was to analyze sugar levels (namely maltose, maltotriose, glucose and fructose) and alcohols (ethanol and glycerol) during the fermentation process in wort samples by amperometric enzymatic biosensors developed by our research group for industrial application, HPLC and spectrophotometry, and to compare the suitability of the presented methods for determination of individual analytes. We can conclude that for the specific monitoring of maltose or maltotriose only the HPLC method was suitable. On the other hand, biosensors and spectrophotometry reflected a decrease in total sugar concentration better and were able to detect both glucose and fructose in the later stages of fermentation, while HPLC was not. This can be attributed to the low detection limits and good sensitivity of the proposed methods. For the ethanol and glycerol analysis all methods proved to be suitable. However, concerning the cost expenses and time analysis, biosensors represented the best option. Copyright © 2012 Elsevier Ltd. All rights reserved.

Carbon monoxide sensor and method of use thereof

DOEpatents

McDaniel; Anthony H. , Medlin; J. Will , Bastasz; Robert J.

2007-09-04

Carbon monoxide sensors suitable for use in hydrogen feed streams and methods of use thereof are disclosed. The sensors are palladium metal/insulator/semiconductor (Pd-MIS) sensors which may possess a gate metal layer having uniform, Type 1, or non-uniform, Type 2, film morphology. Type 1 sensors display an increased sensor response in the presence of carbon monoxide while Type 2 sensors display a decreased response to carbon monoxide. The methods and sensors disclosed herein are particularly suitable for use in proton exchange membrane fuel cells (PEMFCs).

Method For Screening Microcrystallizations For Crystal Formation

DOEpatents

Santarsiero, Bernard D. , Stevens, Raymond C. , Schultz, Peter G. , Jaklevic, Joseph M. , Yegian, Derek T. , Cornell, Earl W. , Nordmeyer, Robert A.

2003-10-07

A method is provided for performing array microcrystallizations to determine suitable crystallization conditions for a molecule, the method comprising: forming an array of microcrystallizations, each microcrystallization comprising a drop comprising a mother liquor solution whose composition varies within the array and a molecule to be crystallized, the drop having a volume of less than 1 microliter; storing the array of microcrystallizations under conditions suitable for molecule crystals to form in the drops in the array; and detecting molecule crystal formation in the drops by taking images of the drops.

Suitable Site Selection of Small Dams Using Geo-Spatial Technique: a Case Study of Dadu Tehsil, Sindh

NASA Astrophysics Data System (ADS)

Khalil, Zahid

2016-07-01

Decision making about identifying suitable sites for any project by considering different parameters, is difficult. Using GIS and Multi-Criteria Analysis (MCA) can make it easy for those projects. This technology has proved to be an efficient and adequate in acquiring the desired information. In this study, GIS and MCA were employed to identify the suitable sites for small dams in Dadu Tehsil, Sindh. The GIS software is used to create all the spatial parameters for the analysis. The parameters that derived are slope, drainage density, rainfall, land use / land cover, soil groups, Curve Number (CN) and runoff index with a spatial resolution of 30m. The data used for deriving above layers include 30 meter resolution SRTM DEM, Landsat 8 imagery, and rainfall from National Centre of Environment Prediction (NCEP) and soil data from World Harmonized Soil Data (WHSD). Land use/Land cover map is derived from Landsat 8 using supervised classification. Slope, drainage network and watershed are delineated by terrain processing of DEM. The Soil Conservation Services (SCS) method is implemented to estimate the surface runoff from the rainfall. Prior to this, SCS-CN grid is developed by integrating the soil and land use/land cover raster. These layers with some technical and ecological constraints are assigned weights on the basis of suitability criteria. The pair wise comparison method, also known as Analytical Hierarchy Process (AHP) is took into account as MCA for assigning weights on each decision element. All the parameters and group of parameters are integrated using weighted overlay in GIS environment to produce suitable sites for the Dams. The resultant layer is then classified into four classes namely, best suitable, suitable, moderate and less suitable. This study reveals a contribution to decision making about suitable sites analysis for small dams using geo-spatial data with minimal amount of ground data. This suitability maps can be helpful for water resource management organizations in determination of feasible rainwater harvesting structures (RWH).

[Comparison of two nucleic acid extraction methods for norovirus in oysters].

PubMed

Yuan, Qiao; Li, Hui; Deng, Xiaoling; Mo, Yanling; Fang, Ling; Ke, Changwen

2013-04-01

To explore a convenient and effective method for norovirus nucleic acid extraction from oysters suitable for long-term viral surveillance. Two methods, namely method A (glycine washing and polyethylene glycol precipitation of the virus followed by silica gel centrifugal column) and method B (protease K digestion followed by application of paramagnetic silicon) were compared for their performance in norovirus nucleic acid extraction from oysters. Real-time RT-PCR was used to detect norovirus in naturally infected oysters and in oysters with induced infection. The two methods yielded comparable positive detection rates for the samples, but the recovery rate of the virus was higher with method B than with method A. Method B is a more convenient and rapid method for norovirus nucleic acid extraction from oysters and suitable for long-term surveillance of norovirus.

Process of modifying a cable end

DOEpatents

Roose, L.D.

1995-08-01

End moldings for high-voltage cables are described wherein the dielectric insulator of the cable is heated and molded to conform to a desired shape. As a consequence, high quality substantially bubble-free cable connectors suitable for mating to premanufactured fittings are made. Disclosed are a method for making the cable connectors either in the field or in a factory, molds suitable for use with the method, and the molded cable connectors, themselves. 5 figs.

Discreet passive explosive detection through 2-sided wave guided fluorescence

DOEpatents

Harper, Ross James; la Grone, Marcus; Fisher, Mark

2012-10-16

The current invention provides a passive sampling device suitable for collecting and detecting the presence of target analytes. In particular, the passive sampling device is suitable for detecting nitro-aromatic compounds. The current invention further provides a passive sampling device reader suitable for determining the collection of target analytes. Additionally, the current invention provides methods for detecting target analytes using the passive sampling device and the passive sampling device reader.

Laboratory analytical methods for the determination of the hydrocarbon status of soils (a review)

NASA Astrophysics Data System (ADS)

Pikovskii, Yu. I.; Korotkov, L. A.; Smirnova, M. A.; Kovach, R. G.

2017-10-01

Laboratory analytical methods suitable for the determination of the hydrocarbon status of soils (a specific soil characteristic involving information on the total content and qualitative features of soluble (bitumoid) carbonaceous substances and individual hydrocarbons (polycyclic aromatic hydrocarbons, alkanes, etc.) in bitumoid, as well as the composition and content of hydrocarbon gases) have been considered. Among different physicochemical methods of study, attention is focused on the methods suitable for the wide use. Luminescence-bituminological analysis, low-temperature spectrofluorimetry (Shpolskii spectroscopy), infrared (IR) spectroscopy, gas chromatography, chromatography-mass spectrometry, and some other methods have been characterized, as well as sample preparation features. Advantages and limitations of each of these methods are described; their efficiency, instrumental complexity, analysis duration, and accuracy are assessed.

Methods for producing Cu-67 radioisotope with use of a ceramic capsule for medical applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehst, David A.; Willit, James L.

The present invention provides a method for producing Cu67 radioisotope suitable for use in medical applications. The method comprises irradiating a metallic zinc-68 (Zn68) target within a sealed ceramic capsule with a high energy gamma ray beam. After irradiation, the Cu67 is isolated from the Zn68 by any suitable method (e.g. chemical and or physical separation). In a preferred embodiment, the Cu67 is isolated by sublimation of the zinc in a ceramic sublimation tube to afford a copper residue containing Cu67. The Cu67 can be further purified by chemical means.

[Climatic suitability of citrus in subtropical China].

PubMed

Duan, Hai-Lai; Qian, Huai-Sui; Li, Ming-Xia; Du, Yao-Dong

2010-08-01

By applying the theories of ecological suitability and the methods of fuzzy mathematics, this paper established a climatic suitability model for citrus, calculated and evaluated the climatic suitability and its spatiotemporal differences for citrus production in subtropical China, and analyzed the climatic suitability of citrus at its different growth stages and the mean climatic suitability of citrus in different regions of subtropical China. The results showed that the citrus in subtropical China had a lower climatic suitability and a higher risk at its flower bud differentiation stage, budding stage, and fruit maturity stage, but a higher climatic suitability and a lower risk at other growth stages. Cold damage and summer drought were the key issues affecting the citrus production in subtropical China. The citrus temperature suitability represented a latitudinal zonal pattern, i. e., decreased with increasing latitude; its precipitation suitability was high in the line of "Sheyang-Napo", medium in the southeast of the line, low in the northwest of the line, and non in high mountainous area; while the sunlight suitability was in line with the actual duration of sunshine, namely, higher in high-latitude areas than in low-latitude areas, and higher in high-altitude areas than in plain areas. Limited by temperature factor, the climatic suitability was in accordance with temperature suitability, i. e., south parts had a higher suitability than north parts, basically representing latitudinal zonal pattern. From the analysis of the inter-annual changes of citrus climatic suitability, it could be seen that the citrus climatic suitability in subtropical China was decreasing, and had obvious regional differences, suggesting that climate change could bring about the changes in the regions suitable for citrus production and in the key stages of citrus growth.

The Use of the Visualisation of Multidimensional Data Using PCA to Evaluate Possibilities of the Division of Coal Samples Space Due to their Suitability for Fluidised Gasification

NASA Astrophysics Data System (ADS)

Jamróz, Dariusz; Niedoba, Tomasz; Surowiak, Agnieszka; Tumidajski, Tadeusz

2016-09-01

Methods serving to visualise multidimensional data through the transformation of multidimensional space into two-dimensional space, enable to present the multidimensional data on the computer screen. Thanks to this, qualitative analysis of this data can be performed in the most natural way for humans, through the sense of sight. An example of such a method of multidimensional data visualisation is PCA (principal component analysis) method. This method was used in this work to present and analyse a set of seven-dimensional data (selected seven properties) describing coal samples obtained from Janina and Wieczorek coal mines. Coal from these mines was previously subjected to separation by means of a laboratory ring jig, consisting of ten rings. With 5 layers of both types of coal (with 2 rings each) were obtained in this way. It was decided to check if the method of multidimensional data visualisation enables to divide the space of such divided samples into areas with different suitability for the fluidised gasification process. To that end, the card of technological suitability of coal was used (Sobolewski et al., 2012; 2013), in which key, relevant and additional parameters, having effect on the gasification process, were described. As a result of analyses, it was stated that effective determination of coal samples suitability for the on-surface gasification process in a fluidised reactor is possible. The PCA method enables the visualisation of the optimal subspace containing the set requirements concerning the properties of coals intended for this process.

An iterative and targeted sampling design informed by habitat suitability models for detecting focal plant species over extensive areas.

PubMed

Wang, Ophelia; Zachmann, Luke J; Sesnie, Steven E; Olsson, Aaryn D; Dickson, Brett G

2014-01-01

Prioritizing areas for management of non-native invasive plants is critical, as invasive plants can negatively impact plant community structure. Extensive and multi-jurisdictional inventories are essential to prioritize actions aimed at mitigating the impact of invasions and changes in disturbance regimes. However, previous work devoted little effort to devising sampling methods sufficient to assess the scope of multi-jurisdictional invasion over extensive areas. Here we describe a large-scale sampling design that used species occurrence data, habitat suitability models, and iterative and targeted sampling efforts to sample five species and satisfy two key management objectives: 1) detecting non-native invasive plants across previously unsampled gradients, and 2) characterizing the distribution of non-native invasive plants at landscape to regional scales. Habitat suitability models of five species were based on occurrence records and predictor variables derived from topography, precipitation, and remotely sensed data. We stratified and established field sampling locations according to predicted habitat suitability and phenological, substrate, and logistical constraints. Across previously unvisited areas, we detected at least one of our focal species on 77% of plots. In turn, we used detections from 2011 to improve habitat suitability models and sampling efforts in 2012, as well as additional spatial constraints to increase detections. These modifications resulted in a 96% detection rate at plots. The range of habitat suitability values that identified highly and less suitable habitats and their environmental conditions corresponded to field detections with mixed levels of agreement. Our study demonstrated that an iterative and targeted sampling framework can address sampling bias, reduce time costs, and increase detections. Other studies can extend the sampling framework to develop methods in other ecosystems to provide detection data. The sampling methods implemented here provide a meaningful tool when understanding the potential distribution and habitat of species over multi-jurisdictional and extensive areas is needed for achieving management objectives.

An Iterative and Targeted Sampling Design Informed by Habitat Suitability Models for Detecting Focal Plant Species over Extensive Areas

PubMed Central

Wang, Ophelia; Zachmann, Luke J.; Sesnie, Steven E.; Olsson, Aaryn D.; Dickson, Brett G.

2014-01-01

Prioritizing areas for management of non-native invasive plants is critical, as invasive plants can negatively impact plant community structure. Extensive and multi-jurisdictional inventories are essential to prioritize actions aimed at mitigating the impact of invasions and changes in disturbance regimes. However, previous work devoted little effort to devising sampling methods sufficient to assess the scope of multi-jurisdictional invasion over extensive areas. Here we describe a large-scale sampling design that used species occurrence data, habitat suitability models, and iterative and targeted sampling efforts to sample five species and satisfy two key management objectives: 1) detecting non-native invasive plants across previously unsampled gradients, and 2) characterizing the distribution of non-native invasive plants at landscape to regional scales. Habitat suitability models of five species were based on occurrence records and predictor variables derived from topography, precipitation, and remotely sensed data. We stratified and established field sampling locations according to predicted habitat suitability and phenological, substrate, and logistical constraints. Across previously unvisited areas, we detected at least one of our focal species on 77% of plots. In turn, we used detections from 2011 to improve habitat suitability models and sampling efforts in 2012, as well as additional spatial constraints to increase detections. These modifications resulted in a 96% detection rate at plots. The range of habitat suitability values that identified highly and less suitable habitats and their environmental conditions corresponded to field detections with mixed levels of agreement. Our study demonstrated that an iterative and targeted sampling framework can address sampling bias, reduce time costs, and increase detections. Other studies can extend the sampling framework to develop methods in other ecosystems to provide detection data. The sampling methods implemented here provide a meaningful tool when understanding the potential distribution and habitat of species over multi-jurisdictional and extensive areas is needed for achieving management objectives. PMID:25019621

Advanced Czochralski silicon growth technology for photovoltaic modules

NASA Technical Reports Server (NTRS)

Daud, T.; Kachare, A. H.

1982-01-01

Several economic analyses had indicated that large-diameter, multiple ingot growth using a single crucible with melt replenishment would be required for Cz growth to be economically viable. Based on the results of these analyses, two liquid and two solid feed melt replenishment approaches were initiated. The sequential solid feed melt replenishment approach, which demonstrated elements of technical feasibility is described in detail in this paper. Growth results of multiple ingots (10-cm-diameter, totaling 100 kg; and 15-cm-diameter, totaling 150 kg weight per crucible) are presented. Solar cells were fabricated and analyzed to evaluate the effects of structure and chemical purities as a result of multiple growth. The results indicate that, with semiconductor-grade silicon, feedstock impurity build-up does not seem to degrade cell performance. For polycrystalline cells, the average efficiencies are 15 to 25% lower than those of single crystalline cells. Concerns regarding single crystal yields, crucible quality and growth speed are indicated, and present status and future research thrusts are also discussed.

Growth and characterization of Na2Mo2O7 crystal scintillators for rare event searches

NASA Astrophysics Data System (ADS)

Pandey, Indra Raj; Kim, H. J.; Kim, Y. D.

2017-12-01

Disodium dimolybdate (Na2Mo2O7) crystals were grown using the Czochralski technique. The thermal characteristics of the compound were analyzed using thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) measurements. The crystal structure of the grown sample was confirmed using X-ray diffraction (XRD). Luminescence properties were measured at room and low temperatures, using a light emitting diode (LED) source. Very weak luminescence was observed at room temperature; however, the luminescence intensity was enhanced at low temperatures. The crystal's transmittance spectrum was measured for estimating its optical quality and energy band gap. The grown crystal exhibited a luminescence light yield of 55% compared with CaMoO4 crystals at 10 K, when excited by a 280-nm-wavelength LED source, but does not have the drawbacks of radioactive Ca isotopes. These results suggest that at cryogenic temperatures, Na2Mo2O7 crystal scintillators are promising for the detection of dark matter and neutrinoless double beta decay of 100Mo.

Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Johnson, C. M.

1980-01-01

The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia-Wei

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids,more » this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.« less

Probing vacancy-type free-volume defects in Li2B4O7 single crystal by positron annihilation lifetime spectroscopy

NASA Astrophysics Data System (ADS)

Shpotyuk, O.; Adamiv, V.; Teslyuk, I.; Ingram, A.; Demchenko, P.

2018-01-01

Vacancy-type free-volume defects in lithium tetraborate Li2B4O7 single crystal, grown by the Czochralski technique, are probed with positron annihilation spectroscopy in the lifetime measuring mode. The experimental positron lifetime spectrum is reconstructed within the three-component fitting, involving channels of positron and positronium Ps trapping, as well as within the two-component fitting with a positronium-compensating source input. Structural configurations of the most efficient positron traps are considered using the crystallographic specificity of lithium tetraborate with the main accent on cation-type vacancies. Possible channels of positron trapping are visualized using the electronic structure calculations with density functional theory at the basis of structural parameters proper to Li2B4O7. Spatially-extended positron-trapping complexes involving singly-ionized lithium vacancies, with character lifetime close to 0.32 ns, are responsible for positron trapping in the nominally undoped lithium tetraborate Li2B4O7 crystal.

Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by ultrahigh-temperature rapid thermal oxidation

NASA Astrophysics Data System (ADS)

Maeda, Susumu; Sudo, Haruo; Okamura, Hideyuki; Nakamura, Kozo; Sueoka, Koji; Izunome, Koji

2018-04-01

A new control technique for achieving compatibility between crystal quality and gettering ability for heavy metal impurities was demonstrated for a nitrogen-doped Czochralski silicon wafer with a diameter of 300 mm via ultra-high temperature rapid thermal oxidation (UHT-RTO) processing. We have found that the DZ-IG structure with surface denuded zone and the wafer bulk with dense oxygen precipitates were formed by the control of vacancies in UHT-RTO process at temperature exceeding 1300 °C. It was also confirmed that most of the void defects were annihilated from the sub-surface of the wafer due to the interstitial Si atoms that were generated at the SiO2/Si interface. These results indicated that vacancies corresponded to dominant species, despite numerous interstitial silicon injections. We have explained these prominent features by the degree of super-saturation for the interstitial silicon due to oxidation and the precise thermal properties of the vacancy and interstitial silicon.

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

DOE PAGES

Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; ...

2015-10-15

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

Czochralski growth of NaNO3-LiNO3 solid solution single crystals using axial vibrational control technique

NASA Astrophysics Data System (ADS)

Avetissov, Igor; Sadovskiy, Andrei; Belov, Stanislav; Kong Khan, Chan; Mozhevitina, Elena; Sukhanova, Ekaterina; Zharikov, Eugeniy

2014-09-01

T-x diagram of LiNO3-NaNO3 quasi-binary system has been improved using an original technique based on Raman measurements of condense phase. (LiNO3)x(NaNO3)1-x solid solution single crystal has been grown at different regimes of axial vibrational control (AVC) technique. Significant difference in segregation coefficient behavior between AVC-CZ and conventional CZ grown crystals has appeared: with AVC intensity increase the segregation coefficient (SC) raises for light molecular weight elements, SC reduces for medium molecular weight elements, and SC remains practically unchangeable for heavy molecular weight elements. Effect of vibrational intensity on vibron and optical characteristics, microhardness of AVC-CZ (LiNO3)x(NaNO3)1-x solid solution single crystals has been studied. For the AVC-CZ crystals has been observed increases in microhardness as well as in optical transmission up to 10 rel% compare to conventional CZ grown crystals.

Spectroscopic and laser cooling results on Yb3+-doped BaY2F8 single crystal

NASA Astrophysics Data System (ADS)

Bigotta, Stefano; Parisi, Daniela; Bonelli, Lucia; Toncelli, Alessandra; Tonelli, Mauro; Di Lieto, Alberto

2006-07-01

Anti-Stokes cooling has been observed in an Yb3+-doped BaY2F8 single crystal. Single crystals have been grown by the Czochralski technique. The absorption spectra and the emission properties have been measured at room temperature and at 10K. The energy positions of the Stark sublevels of the ground and the excited state manifolds have been determined and separated from the vibronic substructure. The intrinsic decay time of the F5/22 level has been measured taking care of avoiding the effect of multiple reabsorption processes. The theoretical and experimental cooling efficiencies of Yb:BaY2F8 are evaluated and compared with respect to those of the most frequently investigated materials for laser cooling. A temperature drop of almost 4K was measured by pumping the crystal with 3W of laser radiation at ˜1025nm in single pass configuration with a cooling efficiency of ˜3%.

Impurities in silicon solar cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.

1985-01-01

Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schön, J.; Niewelt, T.; Broisch, J.

2015-12-28

A study of the activation of the light-induced degradation in compensated n-type Czochralski grown silicon is presented. A kinetic model is established that verifies the existence of both the fast and the slow components known from p-type and proves the quadratic dependence of the defect generation rates of both defects on the hole concentration. The model allows for the description of lifetime degradation kinetics in compensated n-type silicon under various intensities and is in accordance with the findings for p-type silicon. We found that the final concentrations of the slow defect component in compensated n-type silicon only depend on themore » interstitial oxygen concentration and on neither the boron concentration nor the equilibrium electron concentration n{sub 0}. The final concentrations of the fast defect component slightly increase with increasing boron concentration. The results on n-type silicon give new insight to the origin of the BO defect and question the existing models for the defect composition.« less

Assessing the impacts of water abstractions on river ecosystem services: an eco-hydraulic modelling approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carolli, Mauro, E-mail: mauro.carolli@unitn.it; Geneletti, Davide, E-mail: davide.geneletti@unitn.it; Zolezzi, Guido, E-mail: guido.zolezzi@unitn.it

The provision of important river ecosystem services (ES) is dependent on the flow regime. This requires methods to assess the impacts on ES caused by interventions on rivers that affect flow regime, such as water abstractions. This study proposes a method to i) quantify the provision of a set of river ES, ii) simulate the effects of water abstraction alternatives that differ in location and abstracted flow, and iii) assess the impact of water abstraction alternatives on the selected ES. The method is based on river modelling science, and integrates spatially distributed hydrological, hydraulic and habitat models at different spatialmore » and temporal scales. The method is applied to the hydropeaked upper Noce River (Northern Italy), which is regulated by hydropower operations. We selected locally relevant river ES: habitat suitability for the adult marble trout, white-water rafting suitability, hydroelectricity production from run-of-river (RoR) plants. Our results quantify the seasonality of river ES response variables and their intrinsic non-linearity, which explains why the same abstracted flow can produce different effects on trout habitat and rafting suitability depending on the morphology of the abstracted reach. An economic valuation of the examined river ES suggests that incomes from RoR hydropower plants are of comparable magnitude to touristic revenue losses related to the decrease in rafting suitability.« less

Geospatial distribution modeling and determining suitability of groundwater quality for irrigation purpose using geospatial methods and water quality index (WQI) in Northern Ethiopia

NASA Astrophysics Data System (ADS)

Gidey, Amanuel

2018-06-01

Determining suitability and vulnerability of groundwater quality for irrigation use is a key alarm and first aid for careful management of groundwater resources to diminish the impacts on irrigation. This study was conducted to determine the overall suitability of groundwater quality for irrigation use and to generate their spatial distribution maps in Elala catchment, Northern Ethiopia. Thirty-nine groundwater samples were collected to analyze and map the water quality variables. Atomic absorption spectrophotometer, ultraviolet spectrophotometer, titration and calculation methods were used for laboratory groundwater quality analysis. Arc GIS, geospatial analysis tools, semivariogram model types and interpolation methods were used to generate geospatial distribution maps. Twelve and eight water quality variables were used to produce weighted overlay and irrigation water quality index models, respectively. Root-mean-square error, mean square error, absolute square error, mean error, root-mean-square standardized error, measured values versus predicted values were used for cross-validation. The overall weighted overlay model result showed that 146 km2 areas are highly suitable, 135 km2 moderately suitable and 60 km2 area unsuitable for irrigation use. The result of irrigation water quality index confirms 10.26% with no restriction, 23.08% with low restriction, 20.51% with moderate restriction, 15.38% with high restriction and 30.76% with the severe restriction for irrigation use. GIS and irrigation water quality index are better methods for irrigation water resources management to achieve a full yield irrigation production to improve food security and to sustain it for a long period, to avoid the possibility of increasing environmental problems for the future generation.

Application of GIS Technology for Town Planning Tasks Solving

NASA Astrophysics Data System (ADS)

Kiyashko, G. A.

2017-11-01

For developing territories, one of the most actual town-planning tasks is to find out the suitable sites for building projects. The geographic information system (GIS) allows one to model complex spatial processes and can provide necessary effective tools to solve these tasks. We propose several GIS analysis models which can define suitable settlement allocations and select appropriate parcels for construction objects. We implement our models in the ArcGIS Desktop package and verify by application to the existing objects in Primorsky Region (Primorye Territory). These suitability models use several variations of the analysis method combinations and include various ways to resolve the suitability task using vector data and a raster data set. The suitability models created in this study can be combined, and one model can be integrated into another as its part. Our models can be updated by other suitability models for further detailed planning.

A fast and accurate method to predict 2D and 3D aerodynamic boundary layer flows

NASA Astrophysics Data System (ADS)

Bijleveld, H. A.; Veldman, A. E. P.

2014-12-01

A quasi-simultaneous interaction method is applied to predict 2D and 3D aerodynamic flows. This method is suitable for offshore wind turbine design software as it is a very accurate and computationally reasonably cheap method. This study shows the results for a NACA 0012 airfoil. The two applied solvers converge to the experimental values when the grid is refined. We also show that in separation the eigenvalues remain positive thus avoiding the Goldstein singularity at separation. In 3D we show a flow over a dent in which separation occurs. A rotating flat plat is used to show the applicability of the method for rotating flows. The shown capabilities of the method indicate that the quasi-simultaneous interaction method is suitable for design methods for offshore wind turbine blades.

Harmonic reduction of Direct Torque Control of six-phase induction motor.

PubMed

Taheri, A

2016-07-01

In this paper, a new switching method in Direct Torque Control (DTC) of a six-phase induction machine for reduction of current harmonics is introduced. Selecting a suitable vector in each sampling period is an ordinal method in the ST-DTC drive of a six-phase induction machine. The six-phase induction machine has 64 voltage vectors and divided further into four groups. In the proposed DTC method, the suitable voltage vectors are selected from two vector groups. By a suitable selection of two vectors in each sampling period, the harmonic amplitude is decreased more, in and various comparison to that of the ST-DTC drive. The harmonics loss is greater reduced, while the electromechanical energy is decreased with switching loss showing a little increase. Spectrum analysis of the phase current in the standard and new switching table DTC of the six-phase induction machine and determination for the amplitude of each harmonics is proposed in this paper. The proposed method has a less sampling time in comparison to the ordinary method. The Harmonic analyses of the current in the low and high speed shows the performance of the presented method. The simplicity of the proposed method and its implementation without any extra hardware is other advantages of the proposed method. The simulation and experimental results show the preference of the proposed method. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Survey of engineering computational methods and experimental programs for estimating supersonic missile aerodynamic characteristics

NASA Technical Reports Server (NTRS)

Sawyer, W. C.; Allen, J. M.; Hernandez, G.; Dillenius, M. F. E.; Hemsch, M. J.

1982-01-01

This paper presents a survey of engineering computational methods and experimental programs used for estimating the aerodynamic characteristics of missile configurations. Emphasis is placed on those methods which are suitable for preliminary design of conventional and advanced concepts. An analysis of the technical approaches of the various methods is made in order to assess their suitability to estimate longitudinal and/or lateral-directional characteristics for different classes of missile configurations. Some comparisons between the predicted characteristics and experimental data are presented. These comparisons are made for a large variation in flow conditions and model attitude parameters. The paper also presents known experimental research programs developed for the specific purpose of validating analytical methods and extending the capability of data-base programs.

Selection of suitable NDT methods for building inspection

NASA Astrophysics Data System (ADS)

Pauzi Ismail, Mohamad

2017-11-01

Construction of modern structures requires good quality concrete with adequate strength and durability. Several accidents occurred in the civil constructions and were reported in the media. Such accidents were due to poor workmanship and lack of systematic monitoring during the constructions. In addition, water leaking and cracking in residential houses was commonly reported too. Based on these facts, monitoring the quality of concrete in structures is becoming more and more important subject. This paper describes major Non-destructive Testing (NDT) methods for evaluating structural integrity of concrete building. Some interesting findings during actual NDT inspections on site are presented. The NDT methods used are explained, compared and discussed. The suitable methods are suggested as minimum NDT methods to cover parameters required in the inspection.

10 CFR 963.10 - Scope.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 10 Energy 4 2011-01-01 2011-01-01 false Scope. 963.10 Section 963.10 Energy DEPARTMENT OF ENERGY YUCCA MOUNTAIN SITE SUITABILITY GUIDELINES Site Suitability Determination, Methods, and Criteria § 963.10 Scope. (a) The scope of this subpart includes the following for both the preclosure and...

10 CFR 963.10 - Scope.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 10 Energy 4 2012-01-01 2012-01-01 false Scope. 963.10 Section 963.10 Energy DEPARTMENT OF ENERGY YUCCA MOUNTAIN SITE SUITABILITY GUIDELINES Site Suitability Determination, Methods, and Criteria § 963.10 Scope. (a) The scope of this subpart includes the following for both the preclosure and...

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yijian; Hong, Mingyi; Dall'Anese, Emiliano

This paper considers power distribution systems featuring renewable energy sources (RESs), and develops a distributed optimization method to steer the RES output powers to solutions of AC optimal power flow (OPF) problems. The design of the proposed method leverages suitable linear approximations of the AC-power flow equations, and is based on the Alternating Direction Method of Multipliers (ADMM). Convergence of the RES-inverter output powers to solutions of the OPF problem is established under suitable conditions on the stepsize as well as mismatches between the commanded setpoints and actual RES output powers. In a broad sense, the methods and results proposedmore » here are also applicable to other distributed optimization problem setups with ADMM and inexact dual updates.« less

The Tracer Gas Method of Determining the Charging Efficiency of Two-stroke-cycle Diesel Engines

NASA Technical Reports Server (NTRS)

Schweitzer, P H; Deluca, Frank, Jr

1942-01-01

A convenient method has been developed for determining the scavenging efficiency or the charging efficiency of two-stroke-cycle engines. The method consists of introducing a suitable tracer gas into the inlet air of the running engine and measuring chemically its concentration both in the inlet and exhaust gas. Monomethylamine CH(sub 3)NH(sub 2) was found suitable for the purpose as it burns almost completely during combustion, whereas the "short-circuited" portion does not burn at all and can be determined quantitatively in the exhaust. The method was tested both on four-stroke and on two-stroke engines and is considered accurate within 1 percent.

MEASUREMENTS OF GAMMA-RAY DOSES OF DIFFERENT RADIOISOTOPES BY THE TEST-FILM METHOD (in German)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Domanus, J.; Halski, L.

The test-film method seems to be most suitable for systematic, periodical measurements of individual doses of ionizing radiation. Persons handling radioisotopes are irradiated with gamma rays of different energies. The energy of gamma radiation lies within much broader limits than is the case with x rays. Therefore it was necessary to check whether the test-film method is suitable for measuring doses of gamma-rays of such different energies and to choose the proper combination of film and screen to reach the necessary measuring range. Polish films, Foton Rentgen and Foton Rentgen Super and films from the German Democratic Republic, Agfa Texomore » R and Agfa Texo S were tested. Expositions were made without intensifying screens as well as with lead and fluorescent screens. The investigations showed that for dosimetric purposes the Foton Rentgen Super films are most suitable. However, not one of the film-screen combinations gave satisfactory results for radioisotopes with radiation of different energies. In such a case the test-film method gives only approximate results. If, on the contrary, gamma energies do not differ greatly, the test- film method proves to be quite good. (auth)« less

A study of the nature of the emission centres and mechanisms of radiative recombination in semi-insulating GaAs crystals (in English)

NASA Astrophysics Data System (ADS)

Komarov, V. G.; Motsnyi, F. V.; Motsnyi, V. F.; Zinets, O. S.

The low temperature photoluminescence spectra of semi-insulating GaAs crystals grown by Czochralski method at different technological conditions have been studied. One of the main background impurities in such materials is carbon. The traditional high temperature annealing of semi-insulating GaAs wafers significantly aggravates their structure perfection because near the surface the creation of conductive layers with the thickness of several microns takes place. The fine structure of the bands of 1.514 and 1.490 eV has been registered. This structure caused by a) polariton emission from upper and low polariton branches; b) radiative recombination of free holes on shallow neutral donors (D^0, h); c) radiative recombination of excitons bound to shallow neutral donors (D^0, X) and to shallow carbon acceptors (C^0_{As}, X); d) excitons bound to the point structure defects (d, X); e) electron transitions between the conduction band and shallow neutral carbon acceptor; f) the electron transitions between donor-acceptor pairs in which carbon and possibly zinc are acceptors in the ground 1S_{3/2} state. The lux-intensity dependencies of the polariton emission from upper polariton branch and photoluminescence of (D^0, h), (C^0_{As}, X), (d, X) complexes are in good agreement with the theory. It is shown that one of the best available semi-insulating GaAs materials is a new commercial AGCP-5V material which differs from others by considerable concentration of shallow donors and new acceptors alongside of the known shallow C^0_{As} acceptor centres.

Mn Impurity in Bulk GaAs Crystals

NASA Astrophysics Data System (ADS)

Pawłowski, M.; Piersa, M.; Wołoś, A.; Palczewska, M.; Strzelecka, G.; Hruban, A.; Gosk, J.; Kamińska, M.; Twardowski, A.

2006-11-01

Magnetic and electron transport properties of GaAs:Mn crystals grown by Czochralski method were studied. Electron spin resonance showed the presence of Mn acceptor A in two charge states: singly ionized A- in the form of Mn2+(d5), and neutral A0 in the form of Mn2+(d5) plus a bound hole (h). It was possible to determine the relative concentration of both types of centers from intensity of the corresponding electron spin resonance lines. Magnetization measured as a function of magnetic field (up to 6 T) in the temperature range of 2-300 K revealed overall paramagnetic behavior of the samples. Effective spin was found to be about 1.5 value, which was consistent with the presence of two types of Mn configurations. In most of the studied samples the dominance of Mn2+(d5)+h configuration was established and it increased after annealing of native donors. The total value of Mn content was obtained from fitting of magnetization curves with the use of parameters obtained from electron spin resonance. In electron transport, two mechanisms of conductivity were observed: valence band transport dominated above 70 K, and hopping conductivity within Mn impurity band at lower temperatures. From the analysis of the hopping conductivity and using the obtained values of the total Mn content, the effective radius of Mn acceptor in GaAs was estimated as a = 11 ± 3 Å.