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Sample records for czochralski silicon crystals

  1. Future application of Czochralski crystal pulling for silicon

    NASA Technical Reports Server (NTRS)

    Matlcok, J. H.

    1985-01-01

    Czochralski (Cz) crystal pulling has been the predominant method used for preparing silicon single crystal for the past twenty years. The fundamental technology used has changed little. However, great strides have been made in learning how to make the crystals bigger and of better quality at ever increasing productivity rates. Currently charge sizes of 50 kg of polycrystal silicon are being used for production and crystals up to ten inches in diameter have been grown without major difficulty. The largest material actually being processed in silicon wafer form is 150 mm (6 inches) in diameter. Growing of crystals in a magnetic field has proved to be particularly useful for microscopic impurity control. Major developments in past years on equipment for Cz crystal pulling have included the automatic growth control of the diameter as well as the starting core of the crystal, the use of magnetic fields and around the crystal puller to supress convection, various recharging schemes for dopant control and the use of continuous liquid feed in the crystal puller. The latter, while far from being a reliable production process, is ideal in concept for major improvement in Cz crystal pulling. The Czochralski process will maintain its dominance of silicon crystal production for many years.

  2. Mutiple Czochralski growth of silicon crystals from a single crucible

    NASA Technical Reports Server (NTRS)

    Lane, R. L.; Kachare, A. H.

    1980-01-01

    An apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.

  3. Large area Czochralski silicon for solar cells

    NASA Technical Reports Server (NTRS)

    Rea, S. N.; Wakefield, G. F.

    1976-01-01

    A detailed model of a typical Czochralski silicon crystal puller is utilized to predict maximum crystal growth rate as a function of various furnace parameters. Results of this analysis, when combined with multiblade slurry sawing, indicate that the Czochralski process is highly attractive for achieving near-term cost reduction of solar cell silicon.

  4. Large area Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Rea, S. N.; Gleim, P. S.

    1977-01-01

    The overall cost effectiveness of the Czochralski process for producing large-area silicon was determined. The feasibility of growing several 12 cm diameter crystals sequentially at 12 cm/h during a furnace run and the subsequent slicing of the ingot using a multiblade slurry saw were investigated. The goal of the wafering process was a slice thickness of 0.25 mm with minimal kerf. A slice + kerf of 0.56 mm was achieved on 12 cm crystal using both 400 grit B4C and SiC abrasive slurries. Crystal growth experiments were performed at 12 cm diameter in a commercially available puller with both 10 and 12 kg melts. Several modifications to the puller hoz zone were required to achieve stable crystal growth over the entire crystal length and to prevent crystallinity loss a few centimeters down the crystal. The maximum practical growth rate for 12 cm crystal in this puller design was 10 cm/h, with 12 to 14 cm/h being the absolute maximum range at which melt freeze occurred.

  5. Crystal-originated particles in germanium-doped Czochralski silicon crystal

    NASA Astrophysics Data System (ADS)

    Chen, Jiahe; Yang, Deren; Li, Hong; Ma, Xiangyang; Tian, Daxi; Li, Liben; Que, Duainlin

    2007-08-01

    Grown-in distribution and annealing behavior of crystal-originated particles (COPs) in Czochralski silicon (Cz-Si) wafer with germanium doping have been investigated. It was found that COPs with high density but small sizes were inclined to generate in germanium-doped Cz-Si (GCz-Si) wafer. The increase of boron atoms in Cz-Si crystal with the germanium doping could benefit the formation of COPs while the oxygen interstitials in GCz-Si wafer could enhance the generation of COPs with small sizes. Meanwhile, it was suggested that the germanium doping in Cz-Si would result in the poor thermal stability of COPs. It is proposed that the combination between germanium atom and vacancy could reduce the free vacancy concentration and the onset temperature for void generation, thus forming denser but smaller void. While the stress compensation induced by boron and germanium atoms could increase the vacancy fluxes in heavy-boron doped GCz-Si crystal, the presence of oxygen atom in GCz-Si would incline to benefit the formation of inner oxide walls of void, especially with small sizes. Furthermore, thinner oxide walls within void for GCz-Si crystal are considered to be charged for the easy annihilation by the germanium doping.

  6. The effect of growth rate, diameter and impurity concentration on structure in Czochralski silicon crystal growth

    NASA Technical Reports Server (NTRS)

    Digges, T. G., Jr.; Shima, R.

    1980-01-01

    It is demonstrated that maximum growth rates of up to 80% of the theoretical limit can be attained in Czochralski-grown silicon crystals while maintaining single crystal structure. Attaining the other 20% increase is dependent on design changes in the grower, to reduce the temperature gradient in the liquid while increasing the gradient in the solid. The conclusions of Hopkins et al. (1977) on the effect of diameter on the breakdown of structure at fast growth rates are substantiated. Copper was utilized as the test impurity. At large diameters (greater than 7.5 cm), concentrations of greater than 1 ppm copper were attained in the solid (45,000 ppm in the liquid) without breakdown at maximum growth speeds. For smaller diameter crystals, the sensitivity of impurities is much more apparent. For solar cell applications, impurities will limit cell performance before they cause crystal breakdown for fast growth rates of large diameter crystals.

  7. Oxygen-induced recombination centers in as-grown Czochralski silicon crystals

    NASA Technical Reports Server (NTRS)

    Nauka, K.; Gatos, H. C.; Lagowski, J.

    1983-01-01

    Simultaneous quantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime are obtained in Czochralski-grown Si crystals employing double laser absorption scanning. It is found that oxygen concentration maxima and minima along the crystal growth direction coincide with lifetime minima and maxima, respectively. Another finding is that the magnitude of oxygen-induced lifetime changes increases dramatically in going from the center to the periphery of the crystal. The findings discussed imply that 'as-grown' oxygen precipitates figure in lifetime-limiting processes.

  8. Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

    NASA Astrophysics Data System (ADS)

    Zhao, Wenhan; Liu, Lijun

    2017-01-01

    The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

  9. Silicon solar cells from transition metal doped Czochralski and web crystals

    NASA Technical Reports Server (NTRS)

    Davis, J. R.; Rai-Choudhury, P.; Blais, P. D.; Hopkins, R. H.; Mccormick, J. R.

    1976-01-01

    The influence of metallic impurities on solar cell characteristics has been examined to establish the cost sensitive purity versus performance trade-offs. Solar cells were fabricated on 2 to 4 ohm-cm p-type substrates obtained by Czochralski and dendritic web growth processes. Controlled amounts of metallic impurities were introduced into the melt during growth and included Fe, Cr, Mn, Ni, Cu, Ti, V, Zr, Mg, Zn, and Al. Impurity concentrations in the crystals were determined using emission and mass spectrographic techniques and in some cases by neutron activation analysis. The solar cells were characterized by means of a computer program to curve-fit measured voltage-current data. The principal effect of the added impurities is a degradation of lifetime and diffusion length.

  10. Phase field modelling on the growth dynamics of double voids of different sizes during czochralski silicon crystal growth

    NASA Astrophysics Data System (ADS)

    Guan, X. J.; Wang, J.

    2017-02-01

    To investigate their dynamics and interaction mechanisms, the growth process of the two voids with different sizes during Czochralski silicon crystal growth were simulated by use of an established phase field model and its corresponding program code. On the basis of the several phase field numerical simulation cases, the evolution laws of the double voids were acquired as follows: the phase field model is capable to simulate the growth process of double voids with different sizes; there are two modes of their growth, that is, either mutual integration or competitive growth; the exact moment of their fusion can be also captured, and it is τ of 7.078 (simulation time step of 14156) for the initial vacancy concentration of 0.02 and the initial space between two void centers of 44Δx.

  11. Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth

    NASA Astrophysics Data System (ADS)

    Daggolu, Parthiv; Ryu, Jae Woo; Galyukov, Alex; Kondratyev, Alexey

    2016-10-01

    With the use of 300 mm silicon wafers for industrial semiconductor device manufacturing, the Czochralski (Cz) crystal growth process has to be optimized to achieve higher quality and productivity. Numerical studies based on 2D global thermal models combined with 3D simulation of melt convection are widely used today to save time and money in the process development. Melt convection in large scale Cz Si growth is controlled by a CUSP or transversal magnetic field (MF) to suppress the melt turbulence. MF can be optimized to meet necessary characteristics of the growing crystal, in terms of point defects, as MF affects the melt/crystal interface geometry and allows adjustment of the pulling rate. Among the different knobs associated with the CUSP magnetic field, the nature of its configuration, going from symmetric to asymmetric, is also reported to be an important tool for the control of crystallization front. Using a 3D unsteady model of the CGSim software, we have studied these effects and compared with several experimental results. In addition, physical mechanisms behind these observations are explored through a detailed modeling analysis of the effect of an asymmetric CUSP MF on convection features governing the heat transport in the silicon melt.

  12. LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

    NASA Technical Reports Server (NTRS)

    Rea, S. N.

    1979-01-01

    A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

  13. Growing Organic Crystals By The Czochralski Method

    NASA Technical Reports Server (NTRS)

    Shields, Angela; Frazier, Donald O.; Penn, Benjamin G.; Aggarwal, M. D.; Wang, W. S.

    1994-01-01

    Apparatus grows high-quality single crystals of organic compounds by Czochralski method. In Czochralski process, growing crystal lifted from middle of molten material without touching walls. Because of low melting temperatures of organic crystals, glass vessels usable. Traditional method for inorganic semiconductors adapted to optically nonlinear organic materials.

  14. LSSA large area silicon sheet task continuous Czochralski process development

    NASA Technical Reports Server (NTRS)

    Rea, S. N.

    1978-01-01

    A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

  15. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

    SciTech Connect

    Ohno, Yutaka Inoue, Kaihei; Fujiwara, Kozo; Deura, Momoko; Kutsukake, Kentaro; Yonenaga, Ichiro; Shimizu, Yasuo; Inoue, Koji; Ebisawa, Naoki; Nagai, Yasuyoshi

    2015-06-22

    Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.

  16. Czochralski crystal growth for laser cooling

    NASA Astrophysics Data System (ADS)

    Cittadino, Giovanni; Volpi, Azzurra; Di Lieto, Alberto; Tonelli, Mauro

    2017-01-01

    In laser cooling of crystals in solid-state physics, it is really important to obtain crystals with a large size at a relatively fast growth rate and high-optical quality that is defect-free. To get that, one of the methods to grow crystals is the Czochralski technique. The Czochralski technique will be presented and, in particular, the furnaces in New Materials for Laser Applications Laboratories of Pisa for this application will be discussed. Afterward the parameters for the growth of crystal fluorides are depicted and it is shown how these parameters lead to build samples suitable for optical cooling. All processes that are necessary to avoid contamination inside crystals like OH- ion and how to avoid reduction of Yb to Yb will be given. Spectroscopy of all samples will be treated in order to obtain the cooling parameters λf and αb for each sample. Afterward, an efficiency model will be discussed and the data efficiency of cooling obtained by a sample's own crystals will be shown.

  17. Effective distribution coefficient of silicon dopants during magnetic Czochralski growth

    NASA Astrophysics Data System (ADS)

    Series, R. W.; Hurle, D. T. J.; Barraclough, K. G.

    1985-09-01

    Silicon crystals have been grown under axial magnetic fields of up to 0.2 T. At 0.05 T the field starts to interact with the melt and dopant incorporation becomes erratic. As the field is increased to 0.2 T the interaction becomes more controlled and it is seen that the effective distribution coefficient (keff) moves towards unity. A theory based on the analysis by Burton, Prim and Slichter of the dependence of the effective distribution coefficient (keff) on growth and crystal rotation rates in Czochralski growth is extended to include the effect of an imposed steady axial magnetic field. The flow fields incorporated into the theory are based on the analysis of the hydromagnetic flow at a rotating disc due to Kakutani (1962). It is shown that keff approaches unity as the field increases.

  18. Behavior of volatile dopants (P, Sb) in Czochralski silicon growth

    NASA Astrophysics Data System (ADS)

    Porrini, M.; Scala, R.; Voronkov, V. V.

    2017-02-01

    The evaporation from the silicon melt, during Czochralski process, is an important effect for Phosphorus and Antimony dopants. The evaporation rate γ was deduced from the measured axial profile of the resistivity converted into the concentration. For the heavily doped crystals, the value of γ is very similar for both P and Sb: in the order of 5.5×10-5 cm/s (which is significantly lower than the previously reported evaporation rates). It was concluded that the rate-limiting step for the evaporation process is neither the evaporation reaction itself nor the impurity transport through the flowing gas, but rather the transport through the melt that strongly depends on the melt convection. For low Phosphorus concentration, the transport through the gas is severely slowed-down - due to a change in the dominant gaseous species, from P2 to P1 - and becomes a limiting step. The evaporation rate is decreased and, in fact, becomes negligible.

  19. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    NASA Technical Reports Server (NTRS)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  20. Potential productivity benefits of float-zone versus Czochralski crystal growth

    NASA Technical Reports Server (NTRS)

    Abe, T.

    1985-01-01

    Efficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation.

  1. Simulation of jet cooling effects on Czochralski crystal growth

    NASA Technical Reports Server (NTRS)

    Srivastava, R. K.; Ramachandran, P. A.; Dudukovic, M. P.

    1986-01-01

    The effects of cooling the crystal side surface by blowing a jet of an inert gas are examined in detail for Czochralski crystal growth. A combined model of the crystal + melt, which incorporates the detailed radiation calculations, the shape of the melt-gas meniscus, predicts the growth rate and the crystal-melt interface shape, is used for this study. The convective heat transfer coefficient for the jet is estimated from the correlation available in the literature. The effect of the jet cooling on the interface shape and the pulling rate is significant. The crystal diameter as well as the interface shape tend to be more stable in the environment of the rapid cooling of the crystal by the jet. The crystal diameter or the interface shape can be easily controlled by adjusting the gas flow rate through the jet. This gives the Czochralski pulling an additional degree of freedom facilitating the control of crystal diameter and interface shape.

  2. New electron trap in p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

  3. Shallow melt apparatus for semicontinuous czochralski crystal growth

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2006-01-10

    In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

  4. Crystal Growth of Mixed Optical Materials With the Automatic Czochralski Puller

    NASA Technical Reports Server (NTRS)

    Loutts, George B.

    1998-01-01

    Most of optical and semiconductor single crystalline materials produced in the electronic industry is grown with the Czochralski technique. This is the only technique capable of producing large high quality single crystals in a reasonable amount of time. The technique originated, and took its name, from pioneering work by Polish engineer J. Czochralski in 1917, who pulled single crystal wires (fibers) of low melting point metals from the melt in order to determine the maximum speeds at which they could be crystallized. The technique has been modified and its application has been extended first to the growth of silicon and later to a very wide range of compound semiconductors, metals, oxides and halides. It is now the dominant technique for the wide range of materials in the electronic industries. Czochralski growth is initiated by dipping a seed crystal of a chosen crystallographic orientation onto the surface of a melt contained in the heated crucible. The seed is then slowly withdrawn, solidifying the adherent column of the melt in steady state at an average rate given by the sum of the pulling rate and the rate of lowering the solid-liquid interface due to the depletion of the melt in the crucible. The control of the desired crystal diameter is achieved by closely controlling the heat balance at the solid-liquid interface.

  5. Czochralski growth and laser performance of alexandrite crystals

    SciTech Connect

    Guo, X.; Zhang, B.; Wu, L.; Chen, M.

    1986-08-15

    Alexandrite (BeAl/sub 2/O/sub 4/:Cr/sup 3 +/) crystals have been growing by the Czochralski technique and continually tunable laser output with energy of 304 mJ and slope efficiency of 0.46% in the wavelength range from 735 to 786 nm has been obtained using c-axis rods. Tunable Q-switch pulse output and LiIO/sub 3/ double-frequency have been also obtained.

  6. Czochralski growth and laser performance of alexandrite crystals

    NASA Astrophysics Data System (ADS)

    Guo, Xing-an; Zhang, Bang-xing; Wu, Lu-sheng; Chen, Mei-Ling

    1986-08-01

    Alexandrite (BeAl2O4:Cr3+) crystals have been growing by the Czochralski technique and continually tunable laser output with energy of 304 mJ and slope efficiency of 0.46% in the wavelength range from 735 to 786 nm has been obtained using c-axis rods. Tunable Q-switch pulse output and LiIO3 double-frequency have been also obtained.

  7. Silicon crystal growth in vacuum

    NASA Technical Reports Server (NTRS)

    Khattak, C. P.; Schmid, F.

    1982-01-01

    The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

  8. Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals

    NASA Astrophysics Data System (ADS)

    Hens, S.; Vanhellemont, J.; Poelman, D.; Clauws, P.; Romandic, I.; Theuwis, A.; Holsteyns, F.; Van Steenbergen, J.

    2005-08-01

    Optical inspection of polished Czochralski-grown Ge wafers typically reveals the presence of surface pits similar to the Crystal Originated Particles (COP's) observed in silicon but in a wider variety of sizes and shapes. Computer simulation of vacancy clustering during the Cz germanium crystal growth suggests that the surface pits originate from large voids formed by the diffusion-limited clustering of an excess of vacancies.

  9. Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

    NASA Astrophysics Data System (ADS)

    Alombert-Goget, G.; Li, H.; Faria, J.; Labor, S.; Guignier, D.; Lebbou, K.

    2016-01-01

    The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.

  10. Growth of LGSO: Ce crystals by the Czochralski method

    SciTech Connect

    Sidletskiy, O. Ts.; Bondar, V. G. Grynyov, B. V.; Kurtsev, D. A.; Baumer, V. N.; Belikov, K. N.; Shtitelman, Z. V.; Tkachenko, S. A.; Zelenskaya, O. V.; Starzhinsky, N. G.; Tarasov, V. A.

    2009-12-15

    Single crystals of Lu{sub 2x}Gd{sub 2-2x}SiO{sub 5}: Ce (0 < x < 1) compounds with different atomic ratios Lu/(Lu + Gd) have been grown by the Czochralski method. It has been shown that a change in the spatial symmetry from P2{sub 1}/c to C2/c in the course of substitution of lutetium for gadolinium occurs at the ratio Lu/(Lu + Gd) = 0.1. The lattice thus formed with symmetry C2/c in the structure of Lu{sub 2x}Gd{sub 2-2x}SiO{sub 5}: Ce crystals favors the maximum possible incorporation of Ce{sup 3+} ions into the sevenfold-coordinated position with respect to oxygen. This explains the substantial improvement of the scintillation characteristics of the grown crystals.

  11. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

    DOEpatents

    Wang, T.; Ciszek, T. F.

    2006-01-10

    In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

  12. The growth of Ho:YAG single crystals by Czochralski method and investigating the formed cores

    SciTech Connect

    Hasani Barbaran, J. Ghani Aragi, M. R.; Javaheri, I.; Baharvand, B.; Tabasi, M.; Layegh Ahan, R.; Jangjo, E.

    2015-12-15

    Ho:YAG single crystals were grown by Czochralski technique, and investigated by the X-ray diffraction (XRD) and optical methods. The crystals were cut and polished in order to observe and analyze their cores. It was found that the deviation of the cores formed in the Czochralski grown Ho:YAG single crystals are resulted from non-symmetrical status of thermal insulation around the Iridium crucible.

  13. A preliminary review of organic materials single crystal growth by the Czochralski technique

    NASA Technical Reports Server (NTRS)

    Penn, B. G.; Shields, A. W.; Frazier, D. O.

    1988-01-01

    The growth of single crystals of organic compounds by the Czochralski method is reviewed. From the literature it is found that single crystals of benzil, a nonlinear optical material with a d sub 11 value of 11.2 + or - 1.5 x d sub 11 value of alpha quartz, has fewer dislocations than generally contained in Bridgman crystals. More perfect crystals were grown by repeated Czochralski growth. This consists of etching away the defect-containing portion of a Czochralski grown crystal and using it as a seed for further growth. Other compounds used to grow single crystals are benzophenone, 12-tricosanone (laurone), and salol. The physical properties, growth apparatus, and processing conditions presented in the literature are discussed. Moreover, some of the possible advantages of growing single crystals of organic compounds in microgravity to obtain more perfect crystals than on Earth are reviewed.

  14. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness. [crystal growth

    NASA Technical Reports Server (NTRS)

    Lane, R. L.

    1981-01-01

    Six growth runs used the Kayex-Hameo Automatic Games Logic (AGILE) computer based system for growth from larger melts in the Mod CG2000. The implementation of the melt pyrometer sensor allowed for dip temperature monitoring and usage by the operator/AGILE system. Use of AGILE during recharge operations was successfully evaluated. The tendency of crystals to lose cylindrical shape (spiraling) continued to be a problem. The hygrometer was added to the Furnace Gas Analysis System and used on several growth runs. The gas chromatograph, including the integrator, was also used for more accurate carbon monoxide concentration measurements. Efforts continued for completing the automation of the total Gas Analysis System. An economic analysis, based on revised achievable straight growth rate, is presented.

  15. Analysis of Phase Separation in Czochralski Grown Single Crystal Ilmenite

    NASA Technical Reports Server (NTRS)

    Wilkins, R.; Powell, Kirk St. A.; Loregnard, Kieron R.; Lin, Sy-Chyi; Muthusami, Jayakumar; Zhou, Feng; Pandey, R. K.; Brown, Geoff; Hawley, M. E.

    1998-01-01

    Ilmenite (FeTiOs) is a wide bandgap semiconductor with an energy gap of 2.58 eV. Ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Single crystal ilmenite has been grown from the melt using the Czochralski method. Growth conditions have a profound effect on the microstructure of the samples. Here we present data from a variety of analytical techniques which indicate that some grown crystals exhibit distinct phase separation during growth. This phase separation is apparent for both post-growth annealed and unannealed samples. Under optical microscopy, there appear two distinct areas forming a matrix with an array of dots on order of 5 pm diameter. While appearing bright in the optical micrograph, atomic force microscope (AFM) shows the dots to be shallow pits on the surface. Magnetic force microscope (MFM) shows the dots to be magnetic. Phase identification via electron microprobe analysis (EMPA) indicates two major phases in the unannealed samples and four in the annealed samples, where the dots appear to be almost pure iron. This is consistent with micrographs taken with a scanning probe microscope used in the magnetic force mode. Samples that do not exhibit the phase separation have little or no discernible magnetic structure detectable by the MFM.

  16. Characterization of the loss of the dislocation-free growth during Czochralski silicon pulling

    NASA Astrophysics Data System (ADS)

    Lanterne, Adeline; Gaspar, Guilherme; Hu, Yu; Øvrelid, Eivind; Di Sabatino, Marisa

    2017-01-01

    The loss of the dislocation-free growth (structure loss) during Czochralski (Cz) silicon pulling can have a strong negative impact on the production yield of the Cz photovoltaic industry. As almost no publication has been dedicated to this phenomenon in the past, this paper aims at investigate in detail the loss of the dislocation-free growth and its origin by characterizing an industrial-scale n-type Cz silicon ingot exhibiting such issue. After the occurrence of a perturbation, generation and propagation of slip dislocations in the already grown crystal have been observed. These dislocations, generated over the whole ingot cross-section, propagate with the solidification front during further growth. Additional small perturbations seem then to be responsible for their multiplication together with the transition to a multicrystalline structure. Investigations were conducted to find the perturbation causing the structure loss in the ingot. A pinhole, small gas bubble of 0.5 mm diameter, was identified as the main cause for the generation of dislocations.

  17. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  18. Advanced Czochralski silicon growth technology for photovoltaic modules

    NASA Technical Reports Server (NTRS)

    Daud, T.; Kachare, A. H.

    1982-01-01

    Several economic analyses had indicated that large-diameter, multiple ingot growth using a single crucible with melt replenishment would be required for Cz growth to be economically viable. Based on the results of these analyses, two liquid and two solid feed melt replenishment approaches were initiated. The sequential solid feed melt replenishment approach, which demonstrated elements of technical feasibility is described in detail in this paper. Growth results of multiple ingots (10-cm-diameter, totaling 100 kg; and 15-cm-diameter, totaling 150 kg weight per crucible) are presented. Solar cells were fabricated and analyzed to evaluate the effects of structure and chemical purities as a result of multiple growth. The results indicate that, with semiconductor-grade silicon, feedstock impurity build-up does not seem to degrade cell performance. For polycrystalline cells, the average efficiencies are 15 to 25% lower than those of single crystalline cells. Concerns regarding single crystal yields, crucible quality and growth speed are indicated, and present status and future research thrusts are also discussed.

  19. Microhardness of carbon-doped (111) p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Danyluk, S.; Lim, D. S.; Kalejs, J.

    1985-01-01

    The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

  20. A versatile low-cost Czochralski crystal growth system for nonlinear optical organic materials

    NASA Technical Reports Server (NTRS)

    Aggarwal, M. D.; Wang, W. S.; Shields, Angela W.; Penn, Benjamin G.; Frazier, Donald O.

    1992-01-01

    A versatile low-cost Czochralski system for pulling crystals from melt has been described. It is designed for low melting, transparent, and nonlinear optical materials. One of the most important novel feature of this crystal growth system is that the entire growth process including the solid-liquid interface can be viewed from any direction. Another is the use of an after-heater to reduce excess heat loss from the surface of the melt.

  1. A DLTS study of hydrogen doped czochralski-grown silicon

    NASA Astrophysics Data System (ADS)

    Jelinek, M.; Laven, J. G.; Kirnstoetter, S.; Schustereder, W.; Schulze, H.-J.; Rommel, M.; Frey, L.

    2015-12-01

    In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10-15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

  2. Further evidence for the C-line pseudodonor model in irradiated Czochralski-grown silicon

    NASA Astrophysics Data System (ADS)

    Kleverman, M.; Fornell, J.-O.; Olajos, J.; Grimmeiss, H. G.; Lindström, J. L.

    1988-06-01

    Photocurrent spectroscopy and photothermal ionization spectroscopy have been performed on electron-irradiated Czochralski-grown silicon. Two series of lines are observed, one starting with the C line at 790 meV, and another starting at about 30 meV higher energy. The lines are shown to belong to the same continuum, indicating that they are all associated with the same center. A continuum is also observed, and in this part of the spectrum Fano resonances are seen. The analysis of these resonances implies that the free-carrier states couple with an f TO phonon, and this confirms the view that the center is donorlike.

  3. KNbO3 single crystal growth by the radio frequency heating Czochralski method

    NASA Technical Reports Server (NTRS)

    Wang, W.; Zou, Q.; Geng, Z.

    1985-01-01

    A radio frequency heating Czochralski technique to obtain single crystal KNbO3 is first presented. The technological parameters of KNbO3 crystal growth by the Czochralski technique and its pulling conditions were studied in detail. The experiments on second harmonic generation using 1.06 micrometer Nd:YAG laser in KNbO3 have been conducted. The second harmonic efficiency for upconversion of KNbO3 is found to be as high as that of NaBa2Nb5O15. An automatic scanning measurement for the optical homogeneity of KNbO crystal is also described. KNbO3 is revealed to be a potentially useful nonlinear material for optical device applications.

  4. Process research of non-Czochralski silicon material

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1986-01-01

    Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

  5. Crystal-melt interface shape of Czochralski-grown large diameter germanium crystals

    NASA Technical Reports Server (NTRS)

    Roth, M.; Azoulay, M.; Gafni, G.; Mizrachi, M.

    1990-01-01

    Crystal-melt interface shapes of 100 to 200 mm diameter 111-line Ge grown by the Czochralski technique have been examined using the method of fast withdrawal from the melt. Initially, the interface shape is convex, then transforms gradually into a sigmoidal shape, becomes nearly planar at about one third of the final crystal length, and finally assumes a concave profile with progressively increasing curvature. The nearly planar interface has a double-facet structure, with an annular facet at the edge of the crystal in addition to the central (111) facet. Formation of the annular facet is accompanied by a giant oscillation of the pull rate when the maximum average pull rate is exceeded. Such oscillation is detrimental to crystal quality, since it introduces a region of high dislocation density. An average pull rate maximum of 2 cm/h has been found to allow for a smooth growth of 200 mm diameter crystals. The origin of the pull rate perturbation is discussed in terms of an instantaneous change in the equilibrium shape of the meniscus.

  6. Scale up aspects of directional solidification and Czochralski silicon growth processes in traveling magnetic fields

    NASA Astrophysics Data System (ADS)

    Dropka, Natasha; Ervik, Torunn; Czupalla, Matthias; Kiessling, Frank M.

    2016-10-01

    We performed 3D simulations of directional solidification (DS) and Czochralski (Cz) silicon growth processes in traveling magnetic fields (TMFs) and verified them with the experimental data that were available. Particularly, we studied silicon DS growth in real G1, G2 and G5 size setups and Cz growth in 6″ and 24″ crucibles in furnaces provided with KRISTMAG® heater magnet modules (HMMs). TMFs were used for a solid/liquid interface shaping and for a melt stirring. Based on our simulation findings, we discussed scale up challenges and proposed a method for safe upscaling. The method related all present driving forces using dimensionless numbers: Grashof (Gr), Stephan (Ste), Reynolds (Re), Shielding (S) and magnetic forcing number (F).

  7. Modelling of melt motion in a Czochralski crystal puller with an axial magnetic field

    NASA Astrophysics Data System (ADS)

    Hjellming, L. N.; Walker, J. S.

    1986-12-01

    The use of matched asymptotic expansions provide analytical solutions for the bulk flow in a Czochralski crystal puller in a strong axial magnetic field. Treating the crystal as a slight electrical conductor alters the radial and axial flows driven by centrifugal pumping. The motion due to buoyancy and thermocapillarity are found by considering the temperature as a known function and solving the non-linear heat equation numerically for different magnetic field strengths and melt depths. This note presents a summary of the analysis and results that are detailed in two papers.

  8. Low temperature iron gettering by grown-in defects in p-type Czochralski silicon

    NASA Astrophysics Data System (ADS)

    Zhu, Haiyan; Yu, Xuegong; Zhu, Xiaodong; Wu, Yichao; He, Jian; Vanhellemont, Jan; Yang, Deren

    2016-11-01

    Low temperature iron gettering in as-grown boron doped Czochralski silicon (Cz-Si) at temperatures between 220 and 500 °C is studied using microwave-photoconductive decay based minority carrier lifetime measurements. Scanning infrared microscopy technique is used to study the defect density/size distribution in the samples before and after anneal. It is found that the decrease of interstitial iron (Fei) concentration shows a double exponential dependence on annealing time at all temperatures. This suggests the existence of two sinks for Fei. Meanwhile, the observed bulk defect densities and sizes in contaminated and as-grown samples are nearly the same, implying that the grown-in defects could be the gettering centers in this process. The results are important for understanding and controlling low temperature Fei gettering during processing of Cz-Si based devices.

  9. Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction

    SciTech Connect

    Gröschel, A. Will, J.; Bergmann, C.; Magerl, A.

    2014-06-21

    Annealed Czochralski Silicon wafers containing SiO{sub x} precipitates have been studied by high energy X-ray diffraction in a defocused Laue setup using a laboratory tungsten tube. The energy dispersive evaluation of the diffracted Bragg intensity of the 220 reflection within the framework of the statistical dynamical theory yields the static Debye-Waller factor E of the crystal, which gives access to the strain induced by the SiO{sub x} precipitates. The results are correlated with precipitate densities and sizes determined from transmission electron microscopy measurements of equivalent wafers. This allows for the determination of the constrained linear misfit ε between precipitate and crystal lattice. For samples with octahedral precipitates the values ranging from ε = 0.39 (+0.28/−0.12) to ε = 0.48 (+0.34/−0.16) indicate that self-interstitials emitted into the matrix during precipitate growth contribute to the lattice strain. In this case, the expected value calculated from literature values is ε = 0.26 ± 0.05. Further, the precise evaluation of Pendellösung oscillations in the diffracted Bragg intensity of as-grown wafers reveals a thermal Debye-Waller parameter for the 220 reflection B{sup 220}(293 K) of 0.5582 ± 0.0039 Å{sup 2} for a structure factor based on spherically symmetric scattering contributions.

  10. Light-induced degradation in compensated p- and n-type Czochralski silicon wafers

    NASA Astrophysics Data System (ADS)

    Geilker, Juliane; Kwapil, Wolfram; Rein, Stefan

    2011-03-01

    Light-induced degradation (LID) due to boron-oxygen complex formation seriously diminishes the minority carrier lifetime of p-type Czochralski-grown (Cz) wafers. Depending linearly on the boron concentration NA in uncompensated silicon, the boron-oxygen defect density was suggested to depend on the net doping concentration p0 = NA - ND in compensated p-type samples, containing similar amounts of boron and phosphorus [D. Macdonald, F. Rougieux, A. Cuevas, et al., Journal of Applied Physics 105, 093704 (2009)]. However, this dependency contradicts observations of LID in compensated n-type silicon wafers [T. Schutz-Kuchly, J. Veirman, S. Dubois, et al., Applied Physics Letters 96, 1 (2010)], which are confirmed in this study by investigating the boron-oxygen complex formation on a large variety of compensated p- and n-type samples. In spite of their high boron content, compensated n-type samples may show a less pronounced LID than p-type samples containing less boron. Our experiments indicate that in compensated silicon, the defect concentration is only a function of the compensation ratio RC = (NA + ND)/(NA - ND).

  11. Optical Properties of LiNbO3 Single Crystal Grown by Czochralski Method

    NASA Astrophysics Data System (ADS)

    Sahar, M. R.; Naim, N. M.; Hamzah, K.

    2011-03-01

    Pure LiNbO3 single crystal was grown by Czochralski method using Automatic Diameter Control—Crystal Growth System (ADC-CGS). The transmission spectrum was determined by using Infrared Spectroscopy while the refractive index was determined using UV-Vis spectroscopy via the Sellmeier equation. The density was also measured using the Archimedes principle. It was found that the peak for the absorption vibrational spectrum for LiNbO3 crystal occurs at 801 cm-1, 672 cm-1, 639 cm-1 and 435 cm-1. The refractive index, ne was found to be 2.480 and the crystal density was around 4.64 g/cm3.

  12. β-barium borate single crystal grown by a direct Czochralski method

    NASA Astrophysics Data System (ADS)

    Itoh, K.; Marumo, F.; Kuwano, Y.

    1990-12-01

    High purity single-crystal of β-BaB 2O 4 has been successfully grown from a BaB 2O 4 melt with the direct Czochralski method. The obtained crystal was confirmed to be that of the low-temperature β-phase by powder X-ray diffraction and the second harmonics generation. The growth rate was 0.6 mm/h, which is more than ten times as targe as that in the flux method. The growth direction was [001]. The present method requires to satisfy several important factors, such as choice of the starting material and temperature gradient at the growing point. The reason why a crystal of the low-temperature form is grown directly from a melt of the compound can be explained by the Ostwald step rule.

  13. Crystal growth of MCZ silicon with ultralow carbon concentration

    NASA Astrophysics Data System (ADS)

    Nagai, Y.; Nakagawa, S.; Kashima, K.

    2014-09-01

    In this study, we investigated the evaporation of carbon monoxide (CO) from silicon melt during crystal growth by evaluating the carbon concentrations in the crystals using photoluminescence (PL) spectroscopy. In order to achieve greater carrier lifetimes in magnetic-field-induced Czochralski (MCZ) silicon for high-power insulated-gate bipolar transistor (IGBT) devices, we focused on the reduction of carbon impurities in MCZ silicon, that act as heterogeneous nucleation sites for oxygen precipitates. To obtain MCZ silicon with a carbon concentration lower than that of floating-zone (FZ) silicon, it is necessary to prevent the back-diffusion of CO from the hot graphite components into the melt and promote CO evaporation from the melt. By promoting CO evaporation, we managed to grow 6-in. CZ silicon crystals with a carbon concentration lower than 1.0×1014 atoms/cm3 at a solidified fraction of 80%.

  14. Single crystal growth of Ga3Ni2 by the Czochralski method

    NASA Astrophysics Data System (ADS)

    Wencka, Magdalena; Pillaca, Mirtha; Gille, Peter

    2016-09-01

    Intermetallic compounds have proved to be interesting alternatives to heterogeneous catalysts prepared from pure noble metals or their alloys. As to study their intrinsic properties, to determine the crystalline structures of specific surfaces and finally to understand elementary processes of heterogeneous catalysis, single crystals of these intermetallics are needed. Inspired by the recent discovery of Ga-Ni catalysts for carbon dioxide reduction to methanol, we have grown for the first time cm3-size single crystals of trigonal Ga3Ni2. We report in detail on the synthesis and Czochralski growth from high-temperature solution using Ga as native solvent. Inclusion formation of Ga-rich fluid proved to be the most severe problem that was minimized by using an extremely low pulling rate down to 25 μm/h.

  15. Continuous Czochralski Growth. Silicon Sheet Growth Development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

    NASA Technical Reports Server (NTRS)

    Merz, F.

    1978-01-01

    The JPL Continuous Czochralski Growth Facility is now essentially complete and is functional. In this reporting period, a silicon lump recharging device was designed, and a prototype was built which performed well in simulated recharge tests. The large chamber (designed to accommodate a 14-inch hot zone) was put into operation initially with the standard hot zone in order to compare performance with previous experience. Some modifications were made to the hot zones in the larger chamber due to considerably larger radiative heat losses. Several short (one-ingot) runs were performed and four continuous runs were attempted. The largest continuous run lasted 64 hours and produced 57 kilograms of ingot.

  16. Radiative heat transfer in curved specular surfaces in Czochralski crystal growth furnace

    SciTech Connect

    Guo, Z.; Maruyama, Shigenao; Tsukada, Takao

    1997-11-07

    A numerical investigation of radiative heat transfer constructed by curved surfaces with specular and diffuse reflection components is carried out. The ray tracing method is adopted for the calculation of view factors, in which a new ray emission model is proposed. The second-degree radiation ring elements are introduced, which are of engineering importance and numerical efficiency. The accuracy of the method is analyzed and verified using a simple configuration. The present computation using the proposed ray emission model is in good agreement with the analytical solution. As a numerical example and engineering application, the effects of the specular reflection and the meniscus of the melt surface in Czochralski (CZ) crystal growth are investigated. A marked temperature decrease in the melt surface is found by introducing specular reflection and the meniscus. The combined effects of the specular reflection and the meniscus should be considered in precision heat transfer control of a CZ apparatus.

  17. Interface shape in Czochralski grown crystals - Effect of conduction and radiation

    NASA Technical Reports Server (NTRS)

    Srivastava, R. K.; Ramachandran, P. A.; Dudukovic, M. P.

    1985-01-01

    A sequential modular computational scheme has been proposed for the calculation of temperature profiles in the melt and crystal including the melt-crystal interface shape and the crystal pulling rate for a fixed crystal radius. The heat transfer in the melt is assumed to occur by conduction only. The shape of melt-gas meniscus, described by Laplace-Young equation, is incorporated in the model and its effects on interface shape and pulling rate are examined. Further, the model incorporates the detailed radiation interaction among the various surfaces in the puller using the Gebhart enclosure theory which accounts for both direct and reflected radiation. The effects of various process parameters on the interface shape and the pulling rate have been investigated. The results of this study indicate that the shape of the melt-gas meniscus has a significant effect on the pulling rate and the interface shape in conformity with earlier studies. Further, it is shown that a simple radiation model (Stefan's model) is inadequate to model the radiation heat exchange in the Czochralski puller apparatus and the detailed Gebhart analysis is necessary for accurate calculation of both the temperature profile in the crystal as well as the interface shape.

  18. Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

    NASA Astrophysics Data System (ADS)

    Kot, D.; Kissinger, G.; Schubert, M. A.; Klingsporn, M.; Huber, A.; Sattler, A.

    2016-11-01

    In this work, we used EDX, EELS and FTIR spectroscopy to investigate the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The EDX analysis of a plate-like precipitate demonstrated that the composition of the precipitate is SiO1.93. This result was confirmed by EELS where the characteristic plasmon peak of SiO2 was observed. Additionally, the absorption band of plate-like precipitates at 1223 cm-1 was found in the FTIR spectrum measured at liquid helium temperature. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO2.

  19. In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth

    NASA Astrophysics Data System (ADS)

    Kakimoto, Koichi; Eguchi, Minoru; Watanabe, Hisao; Hibiya, Taketoshi

    1990-01-01

    In-situ observation of the impurity diffusion boundary layer during single crystal growth of indium-doped silicon was carried out by X-ray radiography. The difference in the transmitted X-ray image compared with molten silicon just beneath the crystal-melt interface was attributed to the concentration of indium impurities having a larger absorption coefficient. The intensity profile of the transmitted X-ray can be reproduced by a transmittance calculation that considers the meniscus shape and impurity distribution. The impurity distribution profile near the crystal-melt interface was estimated using the Burton-Prim-Slichter (BPS) equation. The observed impurity diffusion boundary layer thickness was about 0.5 mm. It was found that the boundary layer thickness was not constant in the radial direction, which cannot be explained by the BPS theory, since it is based on a one-dimensional calculation.

  20. Three dimensional simulation of melt flow in Czochralski crystal growth with steady magnetic fields

    NASA Astrophysics Data System (ADS)

    Cen, Xianrong; Li, Y. S.; Zhan, Jiemin

    2012-02-01

    Three-dimensional transient numerical simulations were carried out to investigate the melt convection and temperature fluctuations within an industrial Czochralski crucible. To study the magnetic damping effects on the growth process, a vertical magnetic field and a cusp magnetic field were considered. Due to our special interest in the melt convection, only local simulation was conducted. The melt flow was calculated by large-eddy simulation (LES) and the magnetic forces were implemented in the CFD code by solving a set of user-defined scalar (UDS) functions. In the absence of magnetic fields, the numerical results show that the buoyant plumes rise from the crucible to the free surface and the crystal-melt interface, which indicates that the heat and mass transfer phenomena in Si melt can be characterized by the turbulent flow patterns. In the presence of a vertical magnetic field, the temperature fluctuations in the melt are significantly damped, with the buoyant plumes forming regular cylindrical geometries. The cusp magnetic field could also markedly reduce the temperature fluctuations, but the buoyant plumes would break into smaller vortical structures, which gather around the crystal as well as in the center of the crucible bottom. With the present crucible configurations, it is found that the vertical magnetic field with an intensity of 128 mT can damp the temperature fluctuations more effectively than the 40 mT cusp magnetic field, especially in the region near the growing crystal.

  1. Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer

    NASA Astrophysics Data System (ADS)

    Lee, In-Ji; Paik, Ungyu; Park, Jea-Gun

    2013-02-01

    The efficiency of nickel gettering in vacancy- and interstitial-silicon-dominant crystalline nature was studied using wafers cut along the axial direction of a CZ-grown silicon ingot grown with a variable v/G ratio. Six crystalline areas (V-rich, P-band, PV, PI, B-band, and I-rich) were present within one wafer. Nickel gettering efficiency was estimated before and after a typical NAND-flash-memory heat-treatment. With as-grown CZ silicon wafers, nickel gettering depends on the crystalline nature, i.e., nickel atoms are mainly gathered at oxygen precipitates in bulk at vacancy-dominant crystalline regions and at the surface of pure silicon in the interstitial-silicon-dominant crystal region (PI). Rapid thermal annealing of a CZ silicon wafer at 1175 °C for 10 s in Ar/NH3 mixture ambient completely erased the dependency of nickel gettering on the crystalline nature and demonstrated an excellent getting ability for nickel contamination via the relaxation gettering of oxygen precipitates.

  2. Czochralski growth of tunable laser crystal BeAl(sub)2O(sub)4:Cr(sup)3+

    NASA Astrophysics Data System (ADS)

    Ma, X.; Hou, Y.; Wang, S.; Shen, Y.; Jin, Z.

    1986-03-01

    Optically homogeneous alexandrite blanks, 100 mm in length and 20 mm in diameter, were grown by Czochralski technique using RF heating. These blanks were fabricated into 90 mm long 5 mm diameter c-axis laser rods. Tunable laser output was obtained experimentally. Spectroscopic characteristics of the crystal were presented. Problems such as prevention of BeO contamination, chrysoberyl formation kinetics and melt aging are also discussed.

  3. Photovoltaic Czochralski silicon manufacturing technology improvements. Annual subcontract report, 1 April 1993--31 March 1994

    SciTech Connect

    Jester, T.

    1995-03-01

    This report describes work performed under a 3-year, 3-phase, cost-share contract to demonstrate significant cost reductions and improvements in manufacturing technology. The objective of the program is to reduce costs in photovoltaic manufacturing by approximately 10% per year. The work was focused in three main areas: (1) silicon crystal growth and thin wafer technology; (2) silicon cell processing; and (3) silicon module fabrication and environmental, safety, and health issues. During this reporting period, several significant improvements were achieved. The crystal growing operation improved significantly with an increase in growth capacity due to larger crucibles, higher polysilicon packing density, and high pull speeds. Wafer processing with wire saws progressed rapidly, and the operation is completely converted to wire saw wafer processing. The wire saws yield almost 50% more wafers per inch in production, thus improving manufacturing volume by 50% without any additional expense in crystal growth. Cell processing improvements focused on better understanding the contact paste and firing processes. Module designs for lower material and labor costs began with the focus on a new junction box, larger modules with larger cells, and a less costly framing technique. In addition, chlorofluorocarbon (CFC) usage was completely eliminated in the Siemens manufacturing facility during this period, resulting in significant reductions in the cost of caustic waste treatment.

  4. Solar cells on low-resistivity boron-doped Czochralski-grown silicon with stabilized efficiencies of 20%

    NASA Astrophysics Data System (ADS)

    Lim, Bianca; Hermann, Sonja; Bothe, Karsten; Schmidt, Jan; Brendel, Rolf

    2008-10-01

    Recently, it was shown that the boron-oxygen complex responsible for the light-induced lifetime degradation in oxygen-rich boron-doped silicon can be permanently deactivated by illumination at elevated temperatures. Since the degradation is particularly harmful in low-resistivity Czochralski silicon (Cz-Si), we apply the deactivation procedure to a high-efficiency rear interdigitated single evaporation emitter wrap-through solar cell made on 1.4Ωcm B-doped Cz-Si. The energy conversion efficiency is thereby increased by more than 1% absolute compared to the degraded state to 20.3% on a designated area of 92cm2 and is furthermore shown to be stable under illumination at room temperature.

  5. Processing experiments on non-Czochralski silicon sheet (MEPSDU support contract). Quarterly technical report No. 1, 14 October 1980-31 December 1980

    SciTech Connect

    Pryor, R.

    1980-01-01

    A program of six months duration has been initiated to support and promote the further development of processing techniques which may be successfully and cost-effectively applied to low-cost non-Czochralski silicon sheet for solar cell fabrication. Work is proceeding and results are reported in the areas of process technology, cell design, cell metallization, and production cost simulation.

  6. Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace

    NASA Technical Reports Server (NTRS)

    Fiegl, George (Inventor); Torbet, Walter (Inventor)

    1981-01-01

    A replenishment crucible is mounted adjacent the usual drawing crucible, from which a monocrystalline boule is drawn according to the Czochralski method. A siphon tube for molten semiconductor transfer extends from the replenishment crucible to the drawing crucible. Each crucible is enclosed within its own hermetic shell and is provided with its own heater. The siphon tube is initially filled with molten semiconductor by raising the inert atmospheric pressure in the shell surrounding the replenishment crucible above that surrounding the drawing crucible. Thereafter, adjustment of the level of molten semiconductor in the drawing crucible may be achieved by adjusting the level in either crucible, since the siphon tube will establish the same level in both crucibles. For continuous processing, solid semiconductor may be added to and melted in the replenishment crucible during the process of drawing crystals from the drawing crucible. A constant liquid level of melted semiconductor is maintained in the system by an optical monitoring device and any of several electromechanical controls of the rate of replenishment or crucible height.

  7. Capillary stability of vapor-liquid-solid crystallization processes and their comparison to Czochralski and Stepanov growth methods

    NASA Astrophysics Data System (ADS)

    Nebol'sin, Valery A.; Suyatin, Dmitry B.; Dunaev, Alexander I.; Tatarenkov, Alexander F.

    2017-04-01

    Epitaxial semiconductor nanowires grown with vapor-liquid-solid crystallization processes are very attractive nanoscale objects for many different applications. Despite extensive studies of the growth mechanism, there is still a lack of understanding of the growth process; in particular, the stability of the vapor-liquid-solid crystallization process has not previously been studied. Here we examine the capillary stability of the vapor-liquid-solid growth of nanowires and filamentary crystals with different diameters and demonstrate that the growth is stable for small Bond numbers when the meniscus height is linearly dependent on catalyst diameter. The capillary stability of vapor-liquid-solid growth is also compared with capillary stability in the Stepanov and Czochralski crystal growth methods; it is shown that capillary stability is not possible in the Czochralski method, although it is possible in the Stepanov growth method when the ratio of crystal diameter to shaper diameter is >1/2. These findings are important for better understanding and improved control of the growth of nanowires and filamentary crystals and indicate, for example, that large diameter filamentary crystals can be grown via a vapor-liquid-solid mechanism if the influence of gravity forces on the liquid catalytic particle shape can be reduced.

  8. Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

    NASA Technical Reports Server (NTRS)

    1981-01-01

    The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

  9. X-ray topographic observations of magnetic domains in Czochralski-grown nickel single crystals in anomalous transmission geometry

    NASA Technical Reports Server (NTRS)

    Kuriyama, M.; Boettinger, W. J.; Burdette, H. E.

    1976-01-01

    The anomalous transmission effect has been observed in nickel single crystals grown by the Czochralski technique. Sample crystals prepared for X-ray topography are 1.5 to 2.5 cm in diameter and thicker than 0.4 mm; the product of the ordinary linear absorption coefficient and thickness ranges from 17 to 45 for Cu K-alpha radiation. Topographs taken with an asymmetric-crystal-topographic (ACT) camera have revealed extremely straight line images and rectangular arrangements of short line-segment images, along with the images of crystal imperfections. The line images change their arrangement upon application of magnetic fields. These images are attributed to magnetic domains in the interior of crystals. The formation of domain walls near the crystal surface is also observed and distinguished clearly from magnetic domains in the bulk with the use of the ACT camera.

  10. Europium and potassium co-doped strontium metaborate single crystals grown by the Czochralski method

    NASA Astrophysics Data System (ADS)

    Głowacki, Michał; Solarz, Piotr; Ryba-Romanowski, Witold; Martín, Inocencio R.; Diduszko, Ryszard; Berkowski, Marek

    2017-01-01

    Strontium metaborate (SrB2O4) is a suitable material for use as a matrix for luminescent dopant ions. Similarity of ionic radii of strontium and divalent europium makes it an excellent host for Eu dopant. This paper reports on the Czochralski growth and spectroscopic study of SrB2O4 single crystals doped with europium and co-doped with europium and potassium. Based on recorded luminescence spectra it was found that both Eu3+ and Eu2+ ions occur in this host. Trivalent europium ions give rise to a narrow-band long-lived red luminescence that is not affected by incorporation of potassium ions. Divalent europium ions emit a UV-blue luminescence, consisting of a large spectral band centered at ca 430 nm. In the absence of potassium ions the decay of this luminescence deviates slightly from a single exponential time dependence with a mean lifetime value of 2.0 ns. In potassium-co-doped sample a strong deviation from a single exponential decay was observed for longer stages of decay, beginning at ca 2.5 ns. This phenomenon was attributed to dissimilarity of relaxation rates of a fraction of europium ions distributed in different lattice sites that are distorted by the presence of big potassium ions. By co-doping the host with alkali ions one can influence the oxidation state of europium ions thereby enhancing the emission of trivalent europium ions. It was concluded that the material under study is a promising phosphor for visible light emission applications.

  11. Crystallization of Silicon Ribbons

    NASA Technical Reports Server (NTRS)

    Leipold, M. H.

    1984-01-01

    Purity constraints for reasonable solar-cell efficiency require that silicon-ribbon growth for photovoltaics occur in a regime in which constitutional supercooling or other compositional effects on the crystallization front are not important. A major consideration in the fundamentals of crystallization is the removal of the latent heat of fusion. The direction of removal, compared with the growth direction, has a major influence on the crystallization rate and the development of localized stresses. The detailed shape of the crystallization front appears to have two forms: that required for dendritic-web growth, and that occurring in all others. After the removal of the latent heat of fusion, the thermal-mechanical behavior of all ribbons appears similar within the constraints of the exothermal gradient. The technological constraints in achieving the required thermal and mechanical conditions vary widely among the growth processes.

  12. Continuous Czochralski growth: Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array project

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The primary objective of this contract is to develop equipment and methods for the economic production of single crystal ingot material by the continuous Czochralski (CZ) process. Continuous CZ is defined for the purpose of this work as the growth of at least 100 kilograms of ingot from only one melt container. During the reporting period (October, 1977 - September, 1978), a modified grower was made fully functional and several recharge runs were performed. The largest run lasted 44 hours and over 42 kg of ingot was produced. Little, if any, degradation in efficiency was observed as a result of pulling multiple crystals from one crucible. Solar efficiencies observed were between 9.3 and 10.4% AMO (13.0 and 14.6% AMI) compared to 10.5% (14.7% AMI) for optimum CZ material control samples. Using the SAMICS/IPEG format, economic analysis of continuous CZ suggests that 1986 DoE cost goals can only be met by the growth of large diameter, large mass crystals.

  13. Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Johnson, C. M.

    1980-01-01

    The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

  14. Real time thermal imaging for analysis and control of crystal growth by the Czochralski technique

    NASA Technical Reports Server (NTRS)

    Wargo, M. J.; Witt, A. F.

    1992-01-01

    A real time thermal imaging system with temperature resolution better than +/- 0.5 C and spatial resolution of better than 0.5 mm has been developed. It has been applied to the analysis of melt surface thermal field distributions in both Czochralski and liquid encapsulated Czochralski growth configurations. The sensor can provide single/multiple point thermal information; a multi-pixel averaging algorithm has been developed which permits localized, low noise sensing and display of optical intensity variations at any location in the hot zone as a function of time. Temperature distributions are measured by extraction of data along a user selectable linear pixel array and are simultaneously displayed, as a graphic overlay, on the thermal image.

  15. Electromigration process for the purification of molten silicon during crystal growth

    DOEpatents

    Lovelace, Alan M. Administrator of the National Aeronautics and Space; Shlichta, Paul J.

    1982-01-01

    A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal growth according to Czochralski techniques and edge-defined film-fed growth (EFG) conditions. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. In the EFG crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities are thereby migrated to one side only of the crystal ribbon. The impurities may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

  16. LGT (La3Ga5.5Ta0.5O14) langatate bulk crystal grown from the melt by Czochralski technique and characterization

    NASA Astrophysics Data System (ADS)

    Boutahraoui, B.; Nehari, A.; Boy, J.; Vacheret, X.; Allani, M.; Cabane, H.; Dumortier, M.; Derbal, M.; Lebbou, K.

    2017-03-01

    La3Ga5,5Ta0,5O14 (LGT) langatate crystals were grown along Z-axis by Czochralski technique in argon and mixed argon with 0.1%O2 atmosphere. The coloration and the performance of langatate crystals were strongly connected to the starting chemical composition, the gas atmosphere and the growth parameters. Any deviation from the optimal LGT generate macroscopic defects such cracks and grains boundary causing a deterioration of the crystals performance.

  17. Investigating the effect of carbon on oxygen behavior in n-type Czochralski silicon for PV application

    NASA Astrophysics Data System (ADS)

    Zhang, Song; Juel, Mari; Øvrelid, Eivind Johannes; Tranell, Gabriella

    2015-02-01

    The objective of the current work was to understand the effect of carbon as an impurity in silicon in terms of the formation of as-grown oxygen defects and the subsequent behavior of these defects in n-type Czochralski (Cz) silicon during heat treatment. Three n-type Cz ingots with different carbon levels were used in the investigation. Copper decoration was used to quantify the number of as-grown defects, while a two-step oxidation process (4 h at 750 °C and 16h at 1050 °C) was used to study the evolution of as-grown defects, that is, the formation and morphology of oxygen precipitates (stacking faults and smaller precipitates) in the silicon during heat treatment. Carrier Density Imaging (CDI) revealed the defect distribution and distinguished their states. Results from the study show that substitutional carbon enhances the etch pit density on the copper decorated samples; indicating an enhanced concentration of defects when the carbon level in the material increases. The higher number density but smaller size as-grown oxygen defects is concluded to be induced by the presence of substitutional carbon, given the oxygen precipitate formation pattern and morphology. Vacancies introduced by carbon did not, however, affect the density of voids significantly and we hence conclude that vacancies were largely consumed by the formation of oxygen complexes, as illustrated by the presence of a higher number density of as-grown oxygen defects in samples with a high carbon concentration. The highest effective minority carrier lifetime of as-grown wafers after amorphous-Si (a-Si) passivation was found on the sample with the highest carbon concentration, and the lifetime in the all samples showed stronger dependence on the oxygen concentration than on the carbon content.

  18. Effective distribution coefficient in magnetic Czochralski growth

    NASA Astrophysics Data System (ADS)

    Hurle, D. T. J.; Series, R. W.

    1985-10-01

    The analysis by Burton, Prim and Slichter (1953) of the dependence of the effective distribution coefficient (keff) on the growth and crystal rotation rates in Czochralski growth is extended to include the effect of an imposed steady axial magnetic field. The theory is based on the analysis of the hydromagnetic flow at a rotating disk due to Kakutani (1962). It is shown that keff approaches unity as the field increases. The likely effects of this on the growth of silicon and gallium arsenide are discussed.

  19. Convective effects in float-zone and Czochralski melts

    NASA Technical Reports Server (NTRS)

    Neitzel, G. P.

    1986-01-01

    The hydrodynamics of crystal-growth melts is a relatively new research area. Numerical modeling of these processes is necessary. The work discussed herein is in two parts: numerical simulations of the flow in a Czochralski melt, and also of that in a float zone. In addition, for the float-zone case, energy stability theory will be used to determine stability bounds for the onset of oscillatory thermo-capillary flow. Convective effects in crystal-growth melts arise from a variety of mechanisms. Temperature gradients both in the direction of gravity and normal to it give rise to convection due to buoyancy effects. Rotation of the crucible and/or crystal causes a forced convection which may augment or oppose the buoyancy-driven flow. Finally, thermo-capillary forces (due to the variation of surface tension with temperature) drive surface motions which in turn generate convection in the bulk fluid. All of these mechanisms are present in either Czochralski or float-zone growth. The objective of the Czochralski modeling is to develop an accurate numerical simulation of the flow in a Czochralski silicon melt and to investigate the effects of various parameters on the flow properties. Like some earlier investigations, the intent is to simulate the effects of buoyancy, forced and thermo-capillary convection, including unsteady effects. Unlike earlier work, the aim is to include the effects of a variable free surface and freezing interface and, possibly incorporate nonaxisymmetric effects.

  20. Correlation between steady-oscillatory flow transition and the interface inversion process during the Czochralski growth of semitransparent oxide crystal

    NASA Astrophysics Data System (ADS)

    Faiez, Reza; Rezaei, Yazdan

    2016-12-01

    In this paper, steady-oscillatory transition of the convective flow in a Czochralski (Cz) growth system was numerically studied. In this configuration, rapid variations in density across narrow region of the flow in the vicinity of the crystallization front leads to an unstable stratification of the flow in this region. Time-dependent, finite volume method calculation of the momentum and heat transport equations shows that an instability mechanism, giving rise to the formation of cold plumes beneath the phase boundary, might be associated with an irreversible change in the convexity of the front. Dynamics of the crystallization front was found to be correlated with the periodic oscillation of the flow. It was shown that the interface inversion process occurs at a critical Reynolds number significantly (˜25%) lower than that predicted by the steady-state Cz-oxide model analysis. Consistently, the time-averaged maximum value of stream function was found to be larger than its corresponding steady-state value. This indicates that the mechanism behind the oscillatory transition of the flow has a positive feedback on the intensity of forced convection flow. These numerical results were attributed to the baroclinic instability mechanism characterized by oscillations of a cold plume appearing at the crystal periphery and descending along the symmetry axis. The time period of oscillations was found to be considerably (30-40%) decreases and, simultaneously, the inclination angle of isopycnals increases (˜48%) at a critical rotation rate of the crystal for which the interface inversion occurs.

  1. Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Wolfson, R. G.; Sibley, C. B.

    1978-01-01

    The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

  2. Oxide Control for Silicon Crystal Growth

    NASA Technical Reports Server (NTRS)

    Wehrli, H. A. I.

    1982-01-01

    Web dendrite growth process pulls sheet of newly crystallized silicon from molten silicon. Jets of argon pull outside gas into melt cavity, preventing silicon oxide from passing through heat-shield hold and depositing on it. Generated by aspirators, reversed flow is used in web dendrite process, which produces sheets of single-crystal silicon for low-cost solar cells.

  3. Continuous Czochralski growth. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The improvement of growth rates using radiation shielding and investigation of the crucible melt interaction for improved yields were emphasized. Growth runs were performed from both 15 and 16 inch diameter crucibles, producing 30 and 37 kg ingots respectively. Efforts to increase the growth rate of 150 mm diameter ingots were limited by temperature instabilities believed to be caused by undesirable thermal convections in the larger melts. The radiation shield improved the growth rate somewhat, but the thermal instability was still evident, leading to nonround ingots and loss of dislocation-free structure. A 38 kg crystal was grown to demonstrate the feasibility of producing 150 kg with four growth cycles. After the grower construction phase, the Hamco microprocessor control system was interfaced to the growth facility, including the sensor for automatic control of seeding temperature, and the sensor for automatic shouldering. Efforts focused upon optimization of the seeding, necking, and shoulder growth automation programs.

  4. Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

    NASA Astrophysics Data System (ADS)

    Sun, Chang; Nguyen, Hieu T.; Rougieux, Fiacre E.; Macdonald, Daniel

    2017-02-01

    Photoluminescence (PL) images and micro-PL maps were taken on Cu- or Ni-doped monocrystalline silicon wafers, to investigate the distribution of the metal precipitates. Several n-type and p-type wafers were used in which Cu or Ni were introduced in the starting melt of the ingots and precipitated during the ingot cooling (as opposed to surface contamination). The micro-PL mapping allowed investigation of the metal precipitates with a higher spatial resolution. Markedly different precipitation patterns were observed in n- and p-type samples: in both Cu- and Ni-doped n-type samples, circular central regions and edge regions were observed. In these regions, particles were distributed randomly and homogeneously. In the p-type Cu-doped and Ni-doped samples, by contrast, the precipitates occurred in lines along <110> orientations. The difference in the precipitation behaviour in n- and p-type samples is conjectured to be caused by different concentrations of self-interstitials and vacancies remaining in the crystal during the ingot cooling: there are more vacancies in the n-type ingots but more interstitials in the p-type ingots. The dopant effects on the intrinsic point defect concentrations in silicon crystals and possible precipitation mechanisms are discussed based on the findings in this work and the literature.

  5. Low Thermal Gradient Czochralski growth of large CdWO{sub 4} crystals and electronic properties of (010) cleaved surface

    SciTech Connect

    Atuchin, V.V.; Galashov, E.N.; Khyzhun, O.Y.; Bekenev, V.L.; Pokrovsky, L.D.; Borovlev, Yu.A.; Zhdankov, V.N.

    2016-04-15

    The crystal growth of large high-quality inclusion-free CdWO4 crystals, 110 mm in diameter and mass up to 20 kg, has been carried out by the Low Thermal Gradient Czochralski (LTG Cz) technique. The high-purity CdWO{sub 4}(010) surface has been prepared by cleavage and high structural quality of the surface has been verified by RHEED, revealing a system of Kikuchi lines. The chemical state and electronic structure of the surface have been studied using X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). The total and partial densities of states of the CdWO{sub 4} tungstate were calculated employing the first-principles full potential linearized augmented plane wave (FP-LAPW) method. The results indicate that the principal contributors to the valence band of CdWO{sub 4} are the Cd 4d, W 5d and O 2p states which contribute mainly at the bottom, in the central portion and at the top of the valence band, respectively, with also significant contributions of the mentioned states throughout the whole CdWO{sub 4} valence-band region. With respect to the occupation of the O 2p states, the results of the FP-LAPW calculations are confirmed by comparison on a common energy scale of the XPS valence-band spectrum and the XES band representing the energy distribution of the O 2p states in this compound. Additionally, the FP-LAPW data allow us to conclude that the CdWO{sub 4} tungstate is a non-direct semiconductor. - Highlights: • Large high-quality CdWO{sub 4} crystals, up to 115 mm in diameter and mass up to 20 kg, have been grown. • The high-purity cleaved CdWO{sub 4}(010) surface has been studied by the XPS and XES methods. • The principal contributors to the CdWO{sub 4} valence band are the Cd 4d, W 5d and O 2p states.

  6. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  7. Solar silicon via the Dow Corning process

    NASA Technical Reports Server (NTRS)

    Hunt, L. P.; Dosaj, V. D.

    1979-01-01

    Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

  8. Czochralski's creative mistake: a milestone on the way to the Gigabit Era.

    PubMed

    Evers, Jürgen; Klüfers, Peter; Staudigl, Rudolf; Stallhofer, Peter

    2003-12-01

    Much of the rapid change in industry, science, and society is brought about by the meteoric development of the microelectronics industry. Daily life is affected by this development; one has only to think of mobile telephones and the chips on modern credit cards. The raw material for microelectronics is the single crystal of silicon, with very high purity and almost perfect crystal structure. About 95% of the world's current production of silicon single crystals is achieved using the process that Jan Czochralski discovered in 1916. Today, single crystals of silicon can be grown that are up to 2 m long, 300 mm in diameter, and weigh up to 265 kg. The use of magnetic fields has led to significant advances in crystal-drawing technology. Intensive research and development reveals that in addition to the technology, which provides crystals of ever-increasing diameter, defect engineering, and the control of the numerous temperature-dependent reactions of crystal defects, are of paramount importance.

  9. Modulating the extent of fast and slow boron-oxygen related degradation in Czochralski silicon by thermal annealing: Evidence of a single defect

    NASA Astrophysics Data System (ADS)

    Kim, Moonyong; Abbott, Malcolm; Nampalli, Nitin; Wenham, Stuart; Stefani, Bruno; Hallam, Brett

    2017-02-01

    The fast and slow boron-oxygen related degradation in p-type Czochralski silicon is often attributed to two separate defects due to the different time constants and the determination of different capture cross section ratios (k). However, a recent study using high lifetime samples demonstrated identical recombination properties for the fast and slow degradation and proposed an alternative hypothesis that these were in fact due to a single defect. The study presented in this article provides further experimental evidence to support the single defect hypothesis. Thermal annealing after light soaking is used to investigate the behaviour of subsequent boron-oxygen related degradation. Modifying the temperature and duration of dark annealing on pre-degraded samples is observed to alter the fraction of fast and slow degradation during subsequent illumination. Dark annealing at 173 °C for 60 s is shown to result in almost all degradation occurring during the fast time-scale, whereas annealing at 155 °C for 7 h causes all degradation to occur during the slow time-scale. This modulation occurs without changing the total extent of degradation or changing the capture cross-section ratio. The results are consistent with the fast decay being caused by defect formation from immediately available defect precursors after dark annealing, whereas the slow degradation is caused by the slow transformation of another species into the defect precursor species before the more rapid reaction of defect formation can proceed.

  10. Light-induced degradation and metastable-state recovery with reaction kinetics modeling in boron-doped Czochralski silicon solar cells

    SciTech Connect

    Kim, Soo Min; Chun, Seungju; Bae, Suhyun; Park, Seungeun; Lee, Hae-seok Kim, Donghwan; Kang, Min Gu; Song, Hee-eun; Kang, Yoonmook

    2014-08-25

    Solar cells fabricated from boron-doped p-type Czochralski silicon suffer from light-induced degradation that can lower the conversion efficiency by up to 10% relative. When solar cells are exposed to temperatures between 100 °C and 200 °C under illumination, regeneration, in which the minority carrier lifetime is gradually recovered, occurs after the initial light-induced degradation. We studied the light-induced degradation and regeneration process using carrier injection within a design chamber and observed open-circuit voltage trends at various sample temperatures. We proposed a cyclic reaction kinetics model to more precisely analyze the degradation and recovery phenomenon. Our model incorporated the reaction paths that were not counted in the original model between the three states (annealed, degradation, and regeneration). We calculated a rate constant for each reaction path based on the proposed model, extracted an activation energy for each reaction using these rate constants at various temperatures, and calculated activation energies of redegradation and the stabilization reaction.

  11. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    NASA Astrophysics Data System (ADS)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-11-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  12. Single-crystal silicon optical fiber by direct laser crystallization

    SciTech Connect

    Ji, Xiaoyu; Lei, Shiming; Yu, Shih -Ying; Cheng, Hiu Yan; Liu, Wenjun; Poilvert, Nicolas; Xiong, Yihuang; Dabo, Ismaila; Mohney, Suzanne E.; Badding, John V.; Gopalan, Venkatraman

    2016-12-05

    Semiconductor core optical fibers with a silica cladding are of great interest in nonlinear photonics and optoelectronics applications. Laser crystallization has been recently demonstrated for crystallizing amorphous silicon fibers into crystalline form. Here we explore the underlying mechanism by which long single-crystal silicon fibers, which are novel platforms for silicon photonics, can be achieved by this process. Using finite element modeling, we construct a laser processing diagram that reveals a parameter space within which single crystals can be grown. Utilizing this diagram, we illustrate the creation of single-crystal silicon core fibers by laser crystallizing amorphous silicon deposited inside silica capillary fibers by high-pressure chemical vapor deposition. The single-crystal fibers, up to 5.1 mm long, have a very welldefined core/cladding interface and a chemically pure silicon core that leads to very low optical losses down to ~0.47-1dB/cm at the standard telecommunication wavelength (1550 nm). Furthermore, tt also exhibits a photosensitivity that is comparable to bulk silicon. Creating such laser processing diagrams can provide a general framework for developing single-crystal fibers in other materials of technological importance.

  13. Single-crystal silicon optical fiber by direct laser crystallization

    DOE PAGES

    Ji, Xiaoyu; Lei, Shiming; Yu, Shih -Ying; ...

    2016-12-05

    Semiconductor core optical fibers with a silica cladding are of great interest in nonlinear photonics and optoelectronics applications. Laser crystallization has been recently demonstrated for crystallizing amorphous silicon fibers into crystalline form. Here we explore the underlying mechanism by which long single-crystal silicon fibers, which are novel platforms for silicon photonics, can be achieved by this process. Using finite element modeling, we construct a laser processing diagram that reveals a parameter space within which single crystals can be grown. Utilizing this diagram, we illustrate the creation of single-crystal silicon core fibers by laser crystallizing amorphous silicon deposited inside silica capillarymore » fibers by high-pressure chemical vapor deposition. The single-crystal fibers, up to 5.1 mm long, have a very welldefined core/cladding interface and a chemically pure silicon core that leads to very low optical losses down to ~0.47-1dB/cm at the standard telecommunication wavelength (1550 nm). Furthermore, tt also exhibits a photosensitivity that is comparable to bulk silicon. Creating such laser processing diagrams can provide a general framework for developing single-crystal fibers in other materials of technological importance.« less

  14. Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers

    NASA Astrophysics Data System (ADS)

    Okuyama, Ryosuke; Masada, Ayumi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

    2017-02-01

    We investigated the diffusion behavior of hydrogen in a silicon wafer made by a carbon-cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A hydrogen peak was observed after high-temperature heat treatment (>1000 °C) and silicon epitaxial growth by secondary ion mass spectrometry analysis. We also confirmed that the hydrogen peak concentration decreased after epitaxial growth upon additional heat treatment. Such a hydrogen diffusion behavior has not been reported. Thus, we derived the activation energy from the projected range of a carbon cluster, assuming only a dissociation reaction, and obtained an activation energy of 0.76 ± 0.04 eV. This value is extremely close to that for the diffusion of hydrogen molecules located at the tetrahedral interstitial site and hydrogen molecules dissociated from multivacancies. Therefore, we assume that the hydrogen in the carbon-cluster projected range diffuses in the molecular state, and hydrogen remaining in the projected range forms complexes of carbon, oxygen, and vacancies.

  15. Photonic crystal sensors based on porous silicon.

    PubMed

    Pacholski, Claudia

    2013-04-09

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  16. National solar technology roadmap: Wafer-silicon PV

    SciTech Connect

    Sopori, Bhushan

    2007-06-01

    This report applies to all bulk-silicon-based PV technologies, including those based on Czochralski, multicrystalline, float-zone wafers, and melt-grown crystals that are 100 μm or thicker, such as ribbons, sheet, or spheral silicon.

  17. Intravitreal properties of porous silicon photonic crystals

    PubMed Central

    Cheng, L; Anglin, E; Cunin, F; Kim, D; Sailor, M J; Falkenstein, I; Tammewar, A; Freeman, W R

    2009-01-01

    Aim To determine the suitability of porous silicon photonic crystals for intraocular drug-delivery. Methods A rugate structure was electrochemically etched into a highly doped p-type silicon substrate to create a porous silicon film that was subsequently removed and ultrasonically fractured into particles. To stabilise the particles in aqueous media, the silicon particles were modified by surface alkylation (using thermal hydrosilylation) or by thermal oxidation. Unmodified particles, hydrosilylated particles and oxidised particles were injected into rabbit vitreous. The stability and toxicity of each type of particle were studied by indirect ophthalmoscopy, biomicroscopy, tonometry, electroretinography (ERG) and histology. Results No toxicity was observed with any type of the particles during a period of >4 months. Surface alkylation led to dramatically increased intravitreal stability and slow degradation. The estimated vitreous half-life increased from 1 week (fresh particles) to 5 weeks (oxidised particles) and to 16 weeks (hydrosilylated particles). Conclusion The porous silicon photonic crystals showed good biocompatibility and may be used as an intraocular drug-delivery system. The intravitreal injectable porous silicon photonic crystals may be engineered to host a variety of therapeutics and achieve controlled drug release over long periods of time to treat chronic vitreoretinal diseases. PMID:18441177

  18. Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation

    NASA Astrophysics Data System (ADS)

    Wang, Qian; Li, Bincheng

    2016-04-01

    Light-induced degradation (LID) effects of boron-doped Cz silicon wafers without surface passivation are investigated in details by photocarrier radiometry (PCR). The resistivity of all samples is in the range of 0.006 Ω {\\cdot } {cm} to 38 Ω {\\cdot } {cm}. It is found that light-induced changes in surface state occupation have a great effect on LID under illumination. With the increasing contribution of light-induced changes in surface state occupation, the generation rate of the defect decreases. The light-induced changes in surface state occupation and light-induced degradation dominate the temporal behaviors of the excess carrier density of high- and low-resistivity Si wafers, respectively. Moreover, the temporal behaviors of PCR signals of these samples under laser illumination with different powers, energy of photons, and multiple illuminations were also analyzed to understand the light-induced change of material properties. Based on the nonlinear dependence of PCR signal on the excitation power, a theoretical model taking into account both light-induced changes in surface state occupation and LID processes was proposed to explain those temporal behaviors.

  19. Effect of internal radiation on the diameter instability observed during the Czochralski growth of Cr4+, Nd3+: YAG crystal

    NASA Astrophysics Data System (ADS)

    Faiez, Reza; Rezaei, Yazdan

    2016-12-01

    In this paper, the growth process and the absorption spectra properties of the Cr4+, Nd3+:YAG crystal are reported. The crystal diameter instability, which occurred just beneath the shoulder, is associated with a nearly sharp change in the crystal color. The effect is described in terms of the internal radiative heat transport through the semitransparent garnet crystal which is highly sensitive to the optical properties of the dopant ions. The color gradient along the crystal is assigned to the charge compensation mechanism almost failed at around the shoulder stage of the process, and the instability is mainly attributed to a significant decrease in the radiative heat transfer within the crystal. The effect of radiative heat transfer, within the crystal and the melt, on the crystallization front shape is numerically investigated to simulate the observed instability. Due to the large segregation coefficient of chromium ions, increasing in the optical thickness of the crystal corresponds to a decrease in that of the melt. It is shown that, both of these variations of optical properties result in a significant decrease in the convexity of the crystal-melt interface. The effect of impurity deposition on the crystal surface was found to lower the critical Reynolds number at which the interface inversion occurs.

  20. Silicon carbide - Progress in crystal growth

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony

    1987-01-01

    Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

  1. Optical and scintillation properties of ce-doped (Gd2Y1)Ga2.7Al2.3O12 single crystal grown by Czochralski method

    NASA Astrophysics Data System (ADS)

    Wang, Chao; Wu, Yuntao; Ding, Dongzhou; Li, Huanying; Chen, Xiaofeng; Shi, Jian; Ren, Guohao

    2016-06-01

    Multicomponent garnets, due to their excellent light yield and energy resolution, become one of the most promising scintillators used for homeland security and nuclear non-proliferation applications. This work focuses on the optimization of Ce-doped (Gd,Y)3(Ga,Al)5O12 scintillators using a combination strategy of pre-screening and scale-up. Ce-doped GdxY1-xGayAl5-yO12 (x=1, 2 and y=2, 2.2, 2.5, 2.7, 3) polycrystalline powders were prepared by high-temperature solid state reaction method. The desired garnet phase in all the samples was confirmed using X-ray diffraction measurement. By comparing the radioluminescence intensity, the highest scintillation efficiency was achieved at a component of Gd2Y1Ga2.7Al2.3O12:Ce powders. A (Gd2Y1)Ga2.7Al2.3O12 doped with 1% Ce single crystal with dimensions of Ø35×40 mm was grown by Czochralski method using a <111> oriented seed. Luminescence and scintillation properties were measured. An optical transmittance of 84% was achieved in the concerned wavelength from 500 to 800 nm. Its 5d-4f emission of Ce3+ is at 530 nm. The light yield of a Ce1%: Gd2Y1Ga2.7Al2.3O12 single crystal slab at a size of 5×5×1 mm3 can reach about 65,000±3000 Ph/MeV along with two decay components of 94 and 615 ns under 137Cs source irradiation.

  2. Configurable silicon photonic crystal waveguides

    NASA Astrophysics Data System (ADS)

    Prorok, Stefan; Petrov, Alexander; Eich, Manfred; Luo, Jingdong; Jen, Alex K.-Y.

    2013-12-01

    In this Letter, we demonstrate that the mode cut off of a photonic crystal waveguide can be trimmed with high accuracy by electron beam bleaching of a chromophore doped polymer cladding. Using this method, configurable waveguides are realized, which allow for spatially resolved changes of the photonic crystal's effective lattice constant as small as 7.6 pm. We show three different examples how to take advantage of configurable photonic crystal waveguides: Shifting of the complete transmission spectrum, definition of cavities with high quality factor, and tuning of existing cavities.

  3. Configurable silicon photonic crystal waveguides

    SciTech Connect

    Prorok, Stefan; Petrov, Alexander; Eich, Manfred; Luo, Jingdong; Jen, Alex K.-Y.

    2013-12-23

    In this Letter, we demonstrate that the mode cut off of a photonic crystal waveguide can be trimmed with high accuracy by electron beam bleaching of a chromophore doped polymer cladding. Using this method, configurable waveguides are realized, which allow for spatially resolved changes of the photonic crystal's effective lattice constant as small as 7.6 pm. We show three different examples how to take advantage of configurable photonic crystal waveguides: Shifting of the complete transmission spectrum, definition of cavities with high quality factor, and tuning of existing cavities.

  4. Flexible single-crystal silicon nanomembrane photonic crystal cavity.

    PubMed

    Xu, Xiaochuan; Subbaraman, Harish; Chakravarty, Swapnajit; Hosseini, Amir; Covey, John; Yu, Yalin; Kwong, David; Zhang, Yang; Lai, Wei-Cheng; Zou, Yi; Lu, Nanshu; Chen, Ray T

    2014-12-23

    Flexible inorganic electronic devices promise numerous applications, especially in fields that could not be covered satisfactorily by conventional rigid devices. Benefits on a similar scale are also foreseeable for silicon photonic components. However, the difficulty in transferring intricate silicon photonic devices has deterred widespread development. In this paper, we demonstrate a flexible single-crystal silicon nanomembrane photonic crystal microcavity through a bonding and substrate removal approach. The transferred cavity shows a quality factor of 2.2×10(4) and could be bent to a curvature of 5 mm radius without deteriorating the performance compared to its counterparts on rigid substrates. A thorough characterization of the device reveals that the resonant wavelength is a linear function of the bending-induced strain. The device also shows a curvature-independent sensitivity to the ambient index variation.

  5. Czochralski growth of NaNO3-LiNO3 solid solution single crystals using axial vibrational control technique

    NASA Astrophysics Data System (ADS)

    Avetissov, Igor; Sadovskiy, Andrei; Belov, Stanislav; Kong Khan, Chan; Mozhevitina, Elena; Sukhanova, Ekaterina; Zharikov, Eugeniy

    2014-09-01

    T-x diagram of LiNO3-NaNO3 quasi-binary system has been improved using an original technique based on Raman measurements of condense phase. (LiNO3)x(NaNO3)1-x solid solution single crystal has been grown at different regimes of axial vibrational control (AVC) technique. Significant difference in segregation coefficient behavior between AVC-CZ and conventional CZ grown crystals has appeared: with AVC intensity increase the segregation coefficient (SC) raises for light molecular weight elements, SC reduces for medium molecular weight elements, and SC remains practically unchangeable for heavy molecular weight elements. Effect of vibrational intensity on vibron and optical characteristics, microhardness of AVC-CZ (LiNO3)x(NaNO3)1-x solid solution single crystals has been studied. For the AVC-CZ crystals has been observed increases in microhardness as well as in optical transmission up to 10 rel% compare to conventional CZ grown crystals.

  6. Solar cell structure incorporating a novel single crystal silicon material

    DOEpatents

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  7. The historical trend in float zone crystal diameters and power requirements for float zoned silicon crystals

    NASA Technical Reports Server (NTRS)

    Kramer, H. G.

    1981-01-01

    The power needed to zone silicon crystals by radio frequency heating was analyzed. The heat loss mechanisms are examined. Curves are presented for power as a function of crystal diameter for commercial silicon zoning.

  8. Interface and facet control during Czochralski growth of (111) InSb crystals for cost reduction and yield improvement of IR focal plane array substrates

    NASA Astrophysics Data System (ADS)

    Gray, Nathan W.; Perez-Rubio, Victor; Bolke, Joseph G.; Alexander, W. B.

    2014-10-01

    Focal plane arrays (FPAs) made on InSb wafers are the key cost-driving component in IR imaging systems. The electronic and crystallographic properties of the wafer directly determine the imaging device performance. The "facet effect" describes the non-uniform electronic properties of crystals resulting from anisotropic dopant segregation during bulk growth. When the segregation coefficient of dopant impurities changes notably across the melt/solid interface of a growing crystal the result is non-uniform electronic properties across wafers made from these crystals. The effect is more pronounced in InSb crystals grown on the (111) axis compared with other orientations and crystal systems. FPA devices made on these wafers suffer costly yield hits due to inconsistent device response and performance. Historically, InSb crystal growers have grown approximately 9-19 degree off-axis from the (111) to avoid the facet effect and produced wafers with improved uniformity of electronic properties. It has been shown by researchers in the 1960s that control of the facet effect can produce uniform small diameter crystals. In this paper, we share results employing a process that controls the facet effect when growing large diameter crystals from which 4, 5, and 6" wafers can be manufactured. The process change resulted in an increase in wafers yielded per crystal by several times, all with high crystal quality and uniform electronic properties. Since the crystals are grown on the (111) axis, manufacturing (111) oriented wafers is straightforward with standard semiconductor equipment and processes common to the high-volume silicon wafer industry. These benefits result in significant manufacturing cost savings and increased value to our customers.

  9. Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results

    NASA Astrophysics Data System (ADS)

    Abe, Takao; Takahashi, Toru

    2011-11-01

    During the growth of float-zoning (FZ) and Czochralski (CZ) Si crystals, the temperature distributions from the growth interface were measured using a two-color infrared thermometer for the FZ crystal surfaces and three thermocouples within the CZ bulk crystals. The results showed that the thermal gradient is a decreasing function of the growth rate, which forms the basis of this work. In a comparison of the shape variations in the growth interfaces observed in both FZ and CZ crystals of three different diameters, all of the results were in agreement with the above premise. In consideration of Stefan's condition the premise above is discussed. One of the most important observations is that the region of increasing thermal gradient extends not only to the region grown before but also to the region afterward by stopping the pulling in FZ crystals or lowering the growth rate in CZ crystals. This phenomenon is termed the “BA (before and after) effect”. The growing CZ crystals are detached from the melt and rapidly cooled so that the point defects are frozen. Using the anomalous oxygen precipitation (AOP) phenomenon obtained by the above detaching, which demonstrates the existence of vacancies in the crystal, we found that the growth interface is always filled with vacancies. By increasing the thermal gradient, which can be controlled by lowering the growth rate, the vacancy (AOP) region is reduced, due to the generation of a silicon interstitial-rich region. The ratio of vacancies from the growth interface and silicon interstitials generated by the thermal gradient ultimately determines the nature of the bulk silicon crystal grown from the melt, i.e., with voids, defect-free or with dislocation loops.

  10. Analysis of local lattice strain around oxygen precipitates in silicon crystals using CBED technique

    NASA Astrophysics Data System (ADS)

    Yonemura, Mitsuharu; Sueoka, Koji; Kamei, Kazuhito

    1998-06-01

    Oxygen precipitates (SiO x) in Czochralski-grown silicon single crystals (CZ-Si) have been used for the `getter' sink for impurities introduced during the LSI wafer manufacturing process. In order to understand the `gettering' phenomena, lattice strain fields around the precipitates have been measured quantitatively using convergent beam electron diffraction (CBED). The local lattice strain can be measured from higher order Laue zone (HOLZ) patterns since the HOLZ pattern in the bright field disk is sensitive to the lattice displacement. As a result, a tetragonal distortion of silicon lattices was found in the vicinity of a platelet of an oxygen precipitate. That is, the strain due to the displacement of (001) Si planes is compressive along the direction normal to [001] Si and is tensile along the direction parallel to [001] Si. The normal strain is estimated to be about 0.3% near the flat plane of the platelet and 0.1% near the edge of the platelet whose edge length is about 500 nm. The results are discussed and compared to those from the finite element method (FEM) simulation.

  11. Cutting fluid study for single crystal silicon

    SciTech Connect

    Chargin, D.

    1998-05-05

    An empirical study was conducted to evaluate cutting fluids for Single Point Diamond Turning (SPDT) of single crystal silicon. The pH of distilled waster was adjusted with various additives the examine the effect of pH on cutting operations. Fluids which seemed to promote ductile cutting appeared to increase tool wear as well, an undesirable tradeoff. High Ph sodium hydroxide solutions showed promise for further research, as they yielded the best combination of reduced tool wear and good surface finish in the ductile regime. Negative rake tools were verified to improve the surface finish, but the negative rake tools used in the experiments also showed much higher wear than conventional 0{degree} rake tools. Effects of crystallographic orientation on SPDT, such as star patterns of fracture damage forming near the center of the samples, were observed to decrease with lower feedrates. Silicon chips were observed and photographed, indicative of a ductile materials removal process.

  12. Excimer laser crystallization of hydrogenated amorphous silicon

    SciTech Connect

    Dai Yongbing; Xu Zhongyang; Wang Changan; Zhang Shaoqiang; An Chengwu; Li Xingjiao; Wan Xinheng; Ding Hui

    1996-12-31

    Hydrogenated amorphous silicon (a-Si:H) films have been crystallized by the irradiations of XeCl excimer laser. The crystallized films have been examined by scanning electron microscopy (SEM), x-ray diffraction (XRD) and conductivity measurements to clarify their morphologies, structure and electrical properties. The results show that a high conductive super thin layer is formed by a single pulse laser irradiation with the energy density of 75mJ/cm{sup 2}. The conductivity increases quickly at laser energy density threshold which decreases when the hydrogen in a-Si:H films is removed by pre-annealing. During crystallization process, oxygen atoms from the air ambient have been introduced into the films and such an introducing process is hindered by the hydrogen eruption. When the oxygen content is high enough, the carrier-transport mechanism includes thermionic emission (TE) and thermionic field emission (TFE) in the vicinity of room temperature, which is similar to semi-insulating polycrystalline silicon (SIPOS).

  13. Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions

    NASA Astrophysics Data System (ADS)

    Romanyuk, Boris; Melnik, Victor; Popov, Valentin; Babich, Vilik; Kladko, Vasyl; Gudymenko, Olexandr; Ilchenko, Volodimir; Vasyliev, Iegor; Goriachko, Andrii

    2014-12-01

    We present a comparative study of thermal donor (TD) center formation mechanisms as a result of carbon ion implantation into float zone (FZ-Si) and Czochralski (Cz-Si) silicon crystals. The kinetics of the TD center formation and transformation of their structure during annealing have been investigated. Also, the TD center formation takes place after additional oxygen implantation into FZ/Cz-Si, and an important role of recoil oxygen atoms (from the screen oxide) has been demonstrated for the FZ-Si case. Their concentration in the Si surface layer depends on the implantation dose and the screen oxide thickness, reaching up to values 1018 to 1019 cm-3, which is comparable with the oxygen concentration in Cz-Si. These oxygen atoms can lead to additional thermal donor centers generation, especially in the FZ-Si.

  14. A virtual crystallization furnace for solar silicon

    SciTech Connect

    Steinbach, I.; Franke, D.; Krumbe, W.; Liebermann, J.

    1994-12-31

    Blocks of silicon for photovoltaic applications are economically crystallized in large casting furnaces. The quality of the material is determined by the velocity of the crystallization front, the flatness of the liquid-solid interface and the thermal gradients in the solid during cooling. The process cycle time, which is determined by the rate of crystallization and cooling, has a large effect on the process economic viability. Traditionally trial and error was used to determine the process control parameters, the success of which depended on the operator`s experience and intuition. This paper presents a numerical model, which when completed by a fitted data set, constitutes a virtual model of a real crystallization furnace, the Virtual Crystallization Furnace (VCF). The time-temperature distribution during the process cycle is the main output, which includes a display of actual liquid-solid front position. Moreover, solidification velocity, temperature gradients and thermal stresses can be deduced from this output. The time needed to run a simulation on a modern work-station is approximately 1/6 of real process time, thereby allowing the user to make many process variations at very reasonable costs. Therefore the VCF is a powerful tool for optimizing the process in order to reduce cycle time and to increase product quality.

  15. Silicon heterojunction solar cell and crystallization of amorphous silicon

    NASA Astrophysics Data System (ADS)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (<200°C). In first part of this dissertation, I will introduce our work on front-junction SHJ solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (<600 nm) light, leading to non-ideal blue response and lower short circuit currents (JSC) in the front-junction SHJ cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since

  16. Tribological properties of sintered polycrystalline and single crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

    1982-01-01

    Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

  17. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    NASA Astrophysics Data System (ADS)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low

  18. A silicon sheet casting experiment. [for solar cell water production

    NASA Technical Reports Server (NTRS)

    Bickler, D. B.; Sanchez, L. E.; Sampson, W. J.

    1980-01-01

    The casting of silicon blanks for solar cells directly without slicing is an exciting concept. An experiment was performed to investigate the feasibility of developing a machine that casts wafers directly. A Czochralski furnace was modified to accept a graphite ingot-simulating fixture. Silicon was melted in the middle of the ingot simulator in a boron nitride mold. Sample castings showed reasonable crystal size. Solar cells were made from the cast blanks. The performance is reported.

  19. Structural and photoluminescence studies on europium-doped lithium tetraborate (Eu:Li2B4O7) single crystal grown by microtube Czochralski (μT-Cz) technique

    NASA Astrophysics Data System (ADS)

    A, Kumaresh; R, Arun Kumar; N, Ravikumar; U, Madhusoodanan; B, S. Panigrahi; K, Marimuthu; M, Anuradha

    2016-05-01

    Rare earth europium (Eu3+)-doped lithium tetraborate (Eu:Li2B4O7) crystal is grown from its stoichiometric melt by microtube Czochralski pulling technique (μT-Cz) for the first time. The grown crystals are subjected to powder x-ray diffraction (PXRD) analysis which reveals the tetragonal crystal structure of the crystals. UV-vis-NIR spectral analysis is carried out to study the optical characteristics of the grown crystals. The crystal is transparent in the entire visible region, and the lower cutoff is observed to be at 304 nm. The existence of BO3 and BO4 bonding structure and the molecular associations are analyzed by Fourier transform infrared (FTIR) spectroscopy. The results of excitation and emission-photoluminescence spectra of europium ion incorporated in lithium tetraborate (LTB) single crystal reveal that the observations of peaks at 258, 297, and 318 nm in the excitation spectra and peaks at 579, 591, 597, 613, and 651 nm are observed in the emission spectra. The chromaticity coordinates are calculated from the emission spectra, and the emission intensity of the grown crystal is characterized through a CIE 1931 (Commission International d’Eclairage) color chromaticity diagram. Project supported by the Department of Science and Technology-Science and Engineering Research Board (Grant No. SR/S2/LOP-0012/2011), the Government of India for Awarding Major Research Project, the University Grants Commission-Department of Atomic Research-Consortium for Scientific Research (Grant No. CSR-KN/CSR-63/2014-2015/503), and the Kalpakkam and Indore, India.

  20. Liquid crystal claddings for passive temperature stabilization of silicon photonics

    NASA Astrophysics Data System (ADS)

    Ptasinski, Joanna N.; Khoo, Iam-Choon; Fainman, Yeshaiahu

    2014-10-01

    Silicon photonics allows for high density component integration on a single chip and it brings promise for low-loss, high-bandwidth data processing in modern computing systems. Owing to silicon's high positive thermo-optic coefficient, temperature fluctuations tend to degrade the device performance. This work explores passive thermal stabilization of silicon photonic devices using nematic liquid crystal (NLC) claddings, as they possess large negative thermo-optic coefficients in addition to low absorption at the telecommunication wavelengths.

  1. Mechanism of the emergence of the photo-EMF upon silicon liquid crystal-single crystal contact

    NASA Astrophysics Data System (ADS)

    Budagov, K. M.; Guseinov, A. G.; Pashaev, B. G.

    2017-03-01

    The effect light has on a silicon liquid crystal-single crystal contact at different temperatures of the surface doping of silicon, and when BaTiO3 nanoparticles are added to the composition of a liquid crystal, is studied. The mechanism of the emergence of the photo-EMF in the liquid crystal-silicon structure is explained.

  2. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

  3. Growth conditions, structure, Raman characterization and optical properties of Sm-doped (LuxGd1-x)2SiO5 single crystals grown by the Czochralski method

    NASA Astrophysics Data System (ADS)

    GŁowacki, MichaŁ; Dominiak-Dzik, Grażyna; Ryba-Romanowski, Witold; Lisiecki, RadosŁaw; Strzęp, Adam; Runka, Tomasz; Drozdowski, MirosŁaw; Domukhovski, Viktor; Diduszko, Ryszard; Berkowski, Marek

    2012-02-01

    The (LuxGd0.995-xSm0.005)2SiO5 single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm3+ ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu3+ content in (LuxGd0.995-xSm0.005)2SiO5 solid solution crystals induces the phase transition from C2/c (Lu2SiO5) to P21/c (Gd2SiO5) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15

  4. Kinetics of thermal donor generation in silicon

    NASA Technical Reports Server (NTRS)

    Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    The generation kinetics of thermal donors at 450 C in Czochralski-grown silicon was found to be altered by high-temperature preannealing (e.g., 1100 C for 30 min). Thus, when compared with as-grown Si, high-temperature preannealed material exhibits a smaller concentration of generated thermal donors and a faster thermal donor saturation. A unified mechanism of nucleation and oxygen diffusion-controlled growth (based on solid-state plate transformation theory) is proposed to account for generation kinetics of thermal donors at 450 C, in as-grown and high-temperature preannealed Czochralski silicon crystals. This mechanism is consistent with the main features of the models which have been proposed to explain the formation of oxygen thermal donors in silicon.

  5. Oxygen precipitation behavior in heavily arsenic doped silicon crystals

    NASA Astrophysics Data System (ADS)

    Haringer, Stephan; Gambaro, Daniela; Porrini, Maria

    2017-01-01

    Silicon crystals containing different levels of arsenic concentration and oxygen content were grown, and samples were taken at various positions along the crystal, to study the influence of three main factors, i.e. the initial oxygen content, the dopant concentration and the thermal history, on the nucleation of oxygen precipitates during crystal growth and cooling in the puller. The crystal thermal history was reconstructed by means of computer modeling, simulating the temperature distribution in the crystal at several growth stages. The oxygen precipitation was characterized after a thermal cycle of 4 h at 800 °C for nuclei stabilization +16 h at 1000 °C for nuclei growth. Oxygen precipitates were counted under microscope on the cleaved sample surface after preferential etching. Lightly doped silicon samples were also included, as reference. Our results show that even in heavily arsenic doped silicon the oxygen precipitation is a strong function of the initial oxygen concentration, similar to what has been observed for lightly doped silicon. In addition, a precipitation retardation effect is observed in the arsenic doped samples when the dopant concentration is higher than 1.7×1019 cm-3 compared to lightly doped samples with the same initial oxygen content and crystal thermal history. Finally, a long permanence time of the crystal in the temperature range between 450 °C and 750 °C enhances the oxygen precipitation, showing that this is an effective temperature range for oxygen precipitation nucleation in heavily arsenic doped silicon.

  6. Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment

    NASA Astrophysics Data System (ADS)

    Hainey, Mel F.; Innocent-Dolor, Jon-L.; Choudhury, Tanushree H.; Redwing, Joan M.

    2017-03-01

    The effect of reactive ion etching using chlorine or fluorine-based plasmas on aluminum-induced crystallization (AIC) of silicon on fused silica glass substrates was investigated with the goal of chemically modifying the substrate surface and thereby influencing the crystallization behavior. Chlorine etching of the glass prior to AIC resulted in six times faster silicon crystallization times and smaller grain sizes than films formed on untreated substrates while fluorine etching resulted in crystallization times double than those on untreated surfaces. The differences in crystallization behavior were attributed to changes in surface chemistry and surface energy of the glass as a result of the plasma treatment as supported by X-ray photoelectron spectroscopy and contact angle measurements. The different surface treatments were then combined with optical lithography to control the location of crystallization on the substrate surface to realize the production of patterned polycrystalline silicon films from initially continuous aluminum and silicon.

  7. Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

    SciTech Connect

    Agbo, Solomon; Sutta, Pavol; Calta, Pavel; Biswas, Rana; Pan, Bicai

    2014-07-01

    We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.

  8. Study of the crystal structure of silicon nanoislands on sapphire

    SciTech Connect

    Krivulin, N. O. Pirogov, A. V.; Pavlov, D. A.; Bobrov, A. I.

    2015-02-15

    The results of studies of the crystal structure of silicon nanoislands on sapphire are reported. It is shown that the principal defects in silicon nanoislands on sapphire are twinning defects. As a result of the formation of such defects, different crystallographic orientations are formed in silicon nanoislands on sapphire. In the initial stages of the molecular-beam epitaxy of silicon on sapphire, there are two basic orientations: the (001) orientation parallel to the surface and the (001) orientation at an angle of 70° to the surface.

  9. All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength.

    PubMed

    Haret, Laurent-Daniel; Checoury, Xavier; Han, Zheng; Boucaud, Philippe; Combrié, Sylvain; De Rossi, Alfredo

    2010-11-08

    We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q=60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz.

  10. Investigation of Backside Textures for Genesis Solar Wind Silicon Collectors

    NASA Technical Reports Server (NTRS)

    Gonzalez, C. P.; Burkett, P. J.; Rodriguez, M. C.; Allton, J. H.

    2014-01-01

    Genesis solar wind collectors were comprised of a suite of 15 types of ultrapure materials. The single crystal, pure silicon collectors were fabricated by two methods: float zone (FZ) and Czochralski (CZ). Because of slight differences in bulk purity and surface cleanliness among the fabrication processes and the specific vendor, it is desirable to know which variety of silicon and identity of vendor, so that appropriate reference materials can be used. The Czochralski method results in a bulk composition with slightly higher oxygen, for example. The CZ silicon array wafers that were Genesis-flown were purchased from MEMC Electronics. Most of the Genesis-flown FZ silicon was purchased from Unisil and cleaned by MEMC, although a few FZ wafers were acquired from International Wafer Service (IWS).

  11. Liquid Crystal on Silicon Wavefront Corrector

    NASA Technical Reports Server (NTRS)

    Pouch, John; Miranda, Felix; Wang, Xinghua; Bos, Philip, J.

    2004-01-01

    A low cost, high resolution, liquid crystal on silicon, spatial light modulator has been developed for the correction of huge aberrations in an optical system where the polarization dependence and the chromatic nature are tolerated. However, the overall system performance suggests that this device is also suitable for real time correction of aberration in human eyes. This device has a resolution of 1024 x 768, and is driven by an XGA display driver. The effective stroke length of the device is 700 nm and 2000 nm for the visible and IR regions of the device, respectively. The response speeds are 50 Hz and 5 Hz, respectively, which are fast enough for real time adaptive optics for aberrations in human eyes. By modulating a wavefront of 2 pi, this device can correct for arbitrary high order wavefront aberrations since the 2-D pixel array is independently controlled by the driver. The high resolution and high accuracy of the device allow for diffraction limited correction of the tip and tilt or defocus without an additional correction loop. We have shown that for every wave of aberration, an 8 step blazed grating is required to achieve high diffraction efficiency around 80%. In light of this, up to 125 waves peak to valley of tip and tilt can be corrected if we choose the simplest aberration. Corrections of 34 waves of aberration, including high order Zernicke terms in a high magnification telescope, to diffraction limited performance (residual wavefront aberration less than 1/30 lambda at 632.8 nm) have been observed at high efficiency.

  12. Room Temperature Crystallization of Hydroxyapatite in Porous Silicon Structures.

    PubMed

    Santana, M; Estevez, J O; Agarwal, V; Herrera-Becerra, R

    2016-12-01

    Porous silicon (PS) substrates, with different pore sizes and morphology, have been used to crystallize hydroxyapatite (HA) nano-fibers by an easy and economical procedure using a co-precipitation method at room temperature. In situ formation of HA nanoparticles, within the meso- and macroporous silicon structure, resulted in the formation of nanometer-sized hydroxyapatite crystals on/within the porous structure. The X-ray diffraction technique was used to determine the tetragonal structure of the crystals. Analysis/characterization demonstrates that under certain synthesis conditions, growth and crystallization of hydroxyapatite layer on/inside PS can be achieved at room temperature. Such composite structures expand the possibility of designing a new bio-composite material based on the hydroxyapatite and silicon synthesized at room temperature.

  13. Advanced crystallization techniques of 'solar grade' silicon

    NASA Astrophysics Data System (ADS)

    Gasparini, M.; Calligarich, C.; Rava, P.; Sardi, L.; Alessandri, M.; Redaelli, F.; Pizzini, S.

    Microstructural, electrical and photo-voltaic characteristics of polycrystal line silicon solar cells fabricated with silicon ingots containing 5, 100 and 500 ppmw iron are reported and discussed. All silicon ingots were grown by the directional solidification technique in graphite or special quartz molds and doped intentionally with iron, in order to evaluate the potentiality of the D.S. technique when employed with solar silicon feedstocks. Results indicate that structural breakdown limits the amount of the ingot which is usable for solar cells fabrication, but also that efficiencies in excess of 10 percent are obtained using the 'good' region of the ingot.

  14. Friction and deformation behavior of single-crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1977-01-01

    Friction and deformation studies were conducted with single-crystal silicon carbide in sliding contact with diamond. When the radius of curvature of the spherical diamond rider was large (0.3), deformation of silicon carbide was primarily elastic. Under these conditions the friction coefficient was low and did not show a dependence on the silicon carbide orientation. Further, there was no detectable cracking of the silicon carbide surfaces. When smaller radii of curvature of the spherical diamond riders (0.15 and 0.02 mm) or a conical diamond rider was used, plastic grooving occured and the silicon carbide exhibited anisotropic friction and deformation behavior. Under these conditions the friction coefficient depended on load. Anisotropic friction and deformation of the basal plane of silicon carbide was controlled by the slip system. 10101120and cleavage of1010.

  15. Electrical Control of Silicon Photonic Crystal Cavity by Graphene

    DTIC Science & Technology

    2012-01-01

    Electrical Control of Silicon Photonic Crystal Cavity by Graphene Arka Majumdar,†,‡,∥ Jonghwan Kim,†,∥ Jelena Vuckovic,‡ and Feng Wang...of electronics and photonics . The combination of graphene with photonic crystals is promising for electro-optic modulation. In this paper, we...demonstrate that by electrostatic gating a single layer of graphene on top of a photonic crystal cavity, the cavity resonance can be changed significantly. A

  16. Crystallization behavior of silicon quantum dots in a silicon nitride matrix.

    PubMed

    Ha, Rin; Kim, Shinho; Kim, Hyun Jong; Lee, Jung Chul; Bae, Jong-Seong; Kim, Yangdo

    2012-02-01

    Silicon quantum dot superlattice was fabricated by alternating deposition of silicon rich nitride (SRN) and Si3N4 layers using RF magnetron co-sputtering. Samples were then annealed at temperatures between 800 and 1,100 degrees C and characterized by grazing incident X-ray diffraction (GIXRD), transmission electron microscopy (TEM), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). GIXRD and Raman analyses show that the formation of silicon quantum dots occurs with annealing above 1,100 degrees C for at least 60 minutes. As the annealing time increased the crystallization of silicon quantum dots was also increased. TEM images clearly showed SRN/Si3N4 superlattice structure and silicon quantum dots formation in SRN layers after annealing at 1,100 degrees C for more than 60 minutes. The changes in FTIR transmission spectra observed with annealing condition corresponded to the configuration of Si-N bonds. Crystallization of silicon quantum dots in a silicon nitride matrix started stabilizing after 60 minutes' annealing and approached completion after 120 minutes'. The systematic investigation of silicon quantum dots in a silicon nitride matrix and their properties for solar cell application are presented.

  17. A comparison between Rad-Hard Standard Float Zone (FZ) and Magnetic Czochralski (MCz) Silicon Diodes in Radiotherapy Electron Beams Dosimetry

    NASA Astrophysics Data System (ADS)

    dos Santos, T. C.; Gonçalves, J. A. C.; Vasques, M. M.; Tobias, C. C. B.; Neves-Junior, W. F. P.; Haddad, C. M. K.; Harkonen, J.

    2011-08-01

    In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.

  18. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

    NASA Technical Reports Server (NTRS)

    1981-01-01

    The process development continued, with a total of nine crystal growth runs. One of these was a 150 kg run of 5 crystals of approximately 30 kg each. Several machine and process problems were corrected and the 150 kg run was as successful as previous long runs on CG2000 RC's. The accelerated recharge and growth will be attempted when the development program resumes at full capacity in FY '82. The automation controls (Automatic Grower Light Computer System) were integrated to the seed dip temperature, shoulder, and diameter sensors on the CG2000 RC development grower. Test growths included four crystals, which were grown by the computer/sensor system from seed dip through tail off. This system will be integrated on the Mod CG2000 grower during the next quarter. The analytical task included the completion and preliminary testing of the gas chromatograph portion of the Furnace Atmosphere Analysis System. The system can detect CO concentrations and will be expanded to oxygen and water analysis in FY '82.

  19. Quantification of the Void Volume in Single-Crystal Silicon.

    PubMed

    D'Agostino, Giancarlo; Di Luzio, Marco; Mana, Giovanni; Martino, Luca; Oddone, Massimo; Sasso, Carlo Paolo

    2016-12-06

    This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm(3) volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10(14) cm(-3) level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant.

  20. Growth of 450 mm diameter semiconductor grade silicon crystals

    NASA Astrophysics Data System (ADS)

    Lu, Zheng; Kimbel, Steven

    2011-03-01

    Research and development of the next generation 450 mm semiconductor grade silicon crystal and related technology have been carried out in MEMC following the company's philosophy to stay one generation ahead on research and development. The first 450 mm dislocation free crystal was grown in early 2009 and the first 450 mm semiconductor wafer was produced shortly after. General challenges in crystal growth process, puller, and hot zone designs, as well as control, automation, and handling are discussed in this paper. General considerations on working with customers and equipment manufacturers on fundamental crystal and wafer quality characteristics are also discussed.

  1. Silicon-based photonic crystal waveguides and couplers

    NASA Astrophysics Data System (ADS)

    Farrell, Stephen G.

    2008-10-01

    Most commercial photonics-related research and development efforts currently fall into one or both of the following technological sectors: silicon photonics and photonic integrated circuits. Silicon photonics [18] is the field concerned with assimilating photonic elements into the well-established CMOS VLSI architecture and IC manufacturing. The convergence of these technologies would be mutually advantageous: photonic devices could increase bus speeds and greatly improve chip-to-chip and board-to-board data rates, whereas photonics, as a field, would benefit from mature silicon manufacturing and economies of scale. On the other hand, those in the photonic integrated circuit sector seek to continue the miniaturization of photonic devices in an effort to obtain an appreciable share of the great windfall of profits that occur when manufacturing, packaging, and testing costs are substantially reduced by shrinking photonic elements to chip-scale dimensions. Integrated photonics companies may [12] or may not [34] incorporate silicon as the platform. In this thesis, we seek to further develop a technology that has the potential to facilitate the forging of silicon photonics and photonic integrated circuits: photonic crystals on silicon-on-insulator substrates. We will first present a brief overview of photonic crystals and their physical properties. We will then detail a finely-tuned procedure for fabricating two-dimensional photonic crystal in the silicon-on-insulator material system. We will then examine transmission properties of our fabricated devices including propagation loss, group index dispersion, and coupling efficiency of directional couplers. Finally, we will present a description of a system for adiabatically tapering optical fibers and the results of using tapered fibers for efficiently coupling light into photonic crystal devices.

  2. Microchannel water cooling of silicon x-ray monochromator crystals

    SciTech Connect

    Arthur, J.; Tompkins, W.H.; Troxel, C. Jr. ); Contolini, R.J.; Schmitt, E. ); Bilderback, D.H.; Henderson, C.; White, J.; Settersten, T. )

    1992-01-01

    The use in silicon x-ray monochromator crystals of water cooling channels with dimensions optimized for efficient heat transfer from silicon to water has been investigated. Such channels are typically about 40 {mu}m wide and 400 {mu}m deep. Procedures have been found for reliably producing microchannel-cooled crystals with very small amounts of residual strain. These crystals have been tested at a high-power wiggler beam line at the Cornell High Energy Synchrotron Source, using an x-ray beam having total power in excess of 250 W and normal-incidence power density greater than 5 W/mm{sup 2}. Under these conditions, the surface-temperature rise of a typical microchannel-cooled crystal was less than 5 {degree}C, and degradation of the (111) rocking curve at 12 keV was very slight. The cooling efficiency is consistent with analytic calculations.

  3. Low cost Czochralski crystal growing technology. Near implementation of the flat plate photovoltaic cost reduction of the low cost solar array project

    NASA Technical Reports Server (NTRS)

    Roberts, E. G.

    1980-01-01

    Equipment developed for the manufacture of over 100 kg of silicon ingot from one crucible by rechanging from another crucible is described. Attempts were made to eliminate the cost of raising the furnace temperature to 250 C above the melting point of silicon by using an RF coil to melt polycrystalline silicon rod as a means of rechanging the crucible. Microprocessor control of the straight growth process was developed and domonstrated for both 4 inch and 6 inch diameter. Both meltdown and melt stabilization processes were achieved using operator prompting through the microprocessor. The use of the RF work coil in poly rod melting as a heat sink in the accelerated growth process was unsuccessful. The total design concept for fabrication and interfacing of the total cold crucible system was completed.

  4. Excimer laser crystallization of amorphous silicon on metallic substrate

    NASA Astrophysics Data System (ADS)

    Delachat, F.; Antoni, F.; Slaoui, A.; Cayron, C.; Ducros, C.; Lerat, J.-F.; Emeraud, T.; Negru, R.; Huet, K.; Reydet, P.-L.

    2013-06-01

    An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J cm-2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J cm-2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites' columnar growth.

  5. Crystal Growth of Germanium-Silicon Alloys on the ISS

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2015-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The experiments are part of the investigation "Influence of Containment on the Growth of Silicon-Germanium" (ICESAGE). The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. This meniscus can exist over a much larger range of processing parameters in microgravity and the meniscus is more stable under microgravity conditions. The plans for the flight experiments will be described.

  6. Microwave Induced Direct Bonding of Single Crystal Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Budraa, N. K.; Jackson, H. W.; Barmatz, M.

    1999-01-01

    We have heated polished doped single-crystal silicon wafers in a single mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates. A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry's at positions of high magnetic field. This process was conducted in vacuum to exclude plasma effects. This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

  7. Distribution of radiative crystal imperfections through a silicon ingot

    SciTech Connect

    Flø, A. Burud, I.; Kvaal, K.; Olsen, E.; Søndenå, R.

    2013-11-15

    Crystal imperfections limit the efficiency of multicrystalline silicon solar cells. Recombination through traps is more prominent in areas with high density of crystal imperfections. A method to visualize the distribution of radiative emission from Shockley Read Hall recombination in silicon is demonstrated. We use hyperspectral photoluminescence, a fast non-destructive method, to image radiatively active recombination processes on a set of 50 wafers through a silicon block. The defect related emission lines D1 and D2 may be detected together or alone. The D3 and D4 seem to be correlated if we assume that an emission at the similar energy as D3 (VID3) is caused by a separate mechanism. The content of interstitial iron (Fe{sub i}) correlates with D4. This method yields a spectral map of the inter band gap transitions, which opens up for a new way to characterize mechanisms related to loss of efficiency for solar cells processed from the block.

  8. Stability limits for the horizontal ribbon growth of silicon crystals

    NASA Astrophysics Data System (ADS)

    Daggolu, Parthiv; Yeckel, Andrew; Bleil, Carl E.; Derby, Jeffrey J.

    2013-01-01

    A rigorous, thermal-capillary model, developed to couple heat transfer, melt convection and capillary physics, is employed to assess stability limits of the HRG system for growing silicon ribbons. Extending the prior understanding of this process put forth by Daggolu et al. [Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals, Journal of Crystal Growth 355 (2012) 129-139], model results presented here identify additional failure mechanisms, including the bridging of crystal onto crucible, the spilling of melt from the crucible, and the undercooling of melt at the ribbon tip, that are consistent with prior experimental observations. Changes in pull rate, pull angle, melt height, and other parameters are shown to give rise to limits, indicating that only narrow operating windows exist in multi-dimensional parameter space for stable growth conditions that circumvent these failure mechanisms.

  9. Control of Nd and Cr concentrations in Nd,Cr : Gd 3Ga 5O 12 single crystals grown by Czochralski method

    NASA Astrophysics Data System (ADS)

    Keszei, B.; Paitz, J.; Vandlik, J.; Süveges, A.

    2001-06-01

    During the growth process of the Nd,Cr : Gd 3Ga 5O 12 (Nd,Cr : GGG) laser crystals the optimum concentrations of the dopants cannot be realized in axial direction of the crystal at a constant pulling (growth) rate as the effective segregation coefficients ( k) of Nd 3+ and Cr 3+ are not unity and not uniform ( k<1 and k>1, respectively). To solve this problem the dopant concentrations were measured in the crystals grown at different pulling rates by atomic absorption to determine the effective and equilibrium segregation coefficients and the ratio of the boundary layer thickness and diffusion coefficients. In the light of these parameters we suggest a pulling (growth) rate program as a function of the fraction of the crystallized melt leading to the smallest concentration variation of the dopants along the length axis of the crystals. The variation of Nd 3+ concentration in the crystal reduced from 35% to 19% while the laser efficiency increased by 15-20% by this method.

  10. Crystallization of silicon films on glass: a comparison of methods

    SciTech Connect

    Lemons, R.A.; Bosch, M.A.; Herbst, D.

    1983-01-01

    The lure of flat panel displays has stimulated much research on the crystallization of silicon films deposited on large-area transparent substrates. In most respects, fused quartz is ideal. It has high purity, thermal shock resistance, and a softening point above the silicon melting temperature. Unfortunately, fused quartz has such a small thermal expansion that the silicon film cracks as it cools. This problem has been attacked by patterning with islands or moats before and after crystallization, by capping, and by using silicate glass substrates that match the thermal expansion of silicon. The relative merits of these methods are compared. Melting of the silicon film to achieve high mobility has been accomplished by a variety of methods including lasers, electron beams, and strip heaters. For low melting temperature glasses, surface heating with a laser or electron beam is essential. Larger grains are obtained with the high bias temperature, strip heater techniques. The low-angle grain boundaries characteristic of these films may be caused by constitutional undercooling. A model is developed to predict the boundary spacing as a function of scan rate and temperature gradient.

  11. High-Q silicon carbide photonic-crystal cavities

    SciTech Connect

    Lee, Jonathan Y.; Lu, Xiyuan; Lin, Qiang

    2015-01-26

    We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.

  12. Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon.

    PubMed

    Kail, F; Molera, J; Farjas, J; Roura, P; Secouard, C; Roca i Cabarrocas, P

    2012-03-07

    The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550 °C and 1.7 eV, respectively, the 'standard' values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses.

  13. Industry needs for silicon crystals and standards

    NASA Technical Reports Server (NTRS)

    Benson, K. E.

    1981-01-01

    The trend of the device fabrication industry requirement for larger crystals is reviewed. The ranges of properties and uniformities measurement standards needed for resistivity (four-point probe and spreading resistance) and for the chemical composition of oxygen and carbon impurities are presented.

  14. Shock compression of [001] single crystal silicon

    DOE PAGES

    Zhao, S.; Remington, B.; Hahn, E. N.; ...

    2016-03-14

    Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent withmore » dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Furthermore, application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.« less

  15. Shock compression of [001] single crystal silicon

    SciTech Connect

    Zhao, S.; Remington, B.; Hahn, E. N.; Kad, B.; Bringa, E. M.; Meyers, M. A.

    2016-03-14

    Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent with dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Furthermore, application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.

  16. Shock compression of [001] single crystal silicon

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Hahn, E. N.; Kad, B.; Remington, B. A.; Bringa, E. M.; Meyers, M. A.

    2016-05-01

    Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent with dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.

  17. Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals.

    PubMed

    Wiedemann, B; Meyer, J D; Jockel, D; Freyhardt, H C; Birkmann, B; Müller, G

    2001-07-01

    The spark-source mass spectrometric assessment of silicon concentrations in silicon-doped vertical-gradient-freeze gallium arsenide is presented. The silicon concentrations determined are compared with the charge-carrier densities measured by means of the Hall effect with van der Pauw symmetry along the axis of a single crystal.

  18. Crystal lattice optimization and new forms of silicon

    NASA Astrophysics Data System (ADS)

    Stucke, David P.

    In Chapter 1 a basic outline of the two main methods used in this thesis is given. A genetic algorithm optimization method based on the concept of natural selection is given. The important factors to consider in creating an effective genetic algorithm search are described. I then give a brief overview of Density Functional Theory (DFT) which is the technique most commonly used to do ab-inito calculations on solid-state systems. The basis for its formulation along with how it is applied to a practical system with some approximations is discussed. In Chapter 2 a description of a genetic search algorithm for optimizing the crystal structure of an infinite crystal is given. This method is applied to a system of colloidal spheres, where the packing density is the figure of merit for structure selection. Our examination of self-assembled multi-component crystals of nanoparticles predicts several new structures with stoichiometries of AB (fused spheres), ABC2, ABC 3, ABC4 and AB2 C2. These new structures have hierarchical layered or linear arrangements that could be useful for functional self-assembled systems. For example, the fused-sphere binary crystal assembles with zig-zag rows of parallel nanowires. The genetic search suceeds while a comparable stochastic algorithm fails to find any structures better than the well-known unary or binary phase-separated systems. Here we describe the algorithm and the results it produces: several new classes of binary and ternary crystals of spherical nanoparticles, including a family of layered perovskite-like systems and an unusual three-dimensional array of parallel zig-zag nanowires. In Chapter 3, We discuss the possibility of constructing new forms of silicon by building in multiple bonds consistent with molecules that have been produced experimentally. We find a dilated diamond crystal lattice containing a silicon-silicon triple bond that is metastable. This structure has very soft vibrational modes that are common in similar

  19. Studies of the Crystallization Process of Aluminum-Silicon Alloys Using a High Temperature Microscope. Thesis

    NASA Technical Reports Server (NTRS)

    Justi, S.

    1985-01-01

    It is shown that primary silicon crystals grow polyhedral in super-eutectic AlSi melts and that phosphorus additives to the melt confirm the strong seeding capacity. Primary silicon exhibits strong dendritic seeding effects in eutectic silicon phases of various silicon alloys, whereas primary aluminum does not possess this capacity. Sodium addition also produces a dendritic silicon network growth in the interior of the sample that is attributed to the slower silicon diffusion velocity during cooling.

  20. Crystallization Behavior of M97 Series Silicone Cushions

    SciTech Connect

    Chien, A.; DeTeresa, S.; Cohenour, R.; Schnieder, J.; LeMay, J.; Balazs, B.

    2000-09-07

    M97 series siloxanes are poly(dimethyl-diphenyl) siloxanes that are reinforced through a mixture of precipitated and fumed silica fillers which are blended in through the addition of a short chain polydimethylsiloxane processing aid. M97 silicones exhibit crystallization at -80.25 C by thermal (modulated differential scanning calorimetry) and mechanical (dynamic mechanical analysis) techniques. Isothermal dynamic mechanical analysis experiments illustrated that crystallization occurred over a 1.8 hour period in silica-filled systems and 2.8 hours in unfilled systems. The onset of crystallization typically occurred after a 30 minute incubation/nucleation period. {gamma}-radiation caused the crystallization rate to decrease proportionally with dosage, but did not decrease the amount of crystallization that ultimately occurred. Irradiation in vacuum resulted in slower overall crystallization rates compared to air irradiation due to increased crosslinking of the polymer matrix under vacuum. Modulated differential scanning calorimetry contrasted the crystallization and melting behavior of pure PDMS versus the M97 base polymer and helped determine which component of the composite was the origin of the crystallization phenomena.

  1. Crystallization of silicon carbide thin films by pulsed laser irradiation

    NASA Astrophysics Data System (ADS)

    De Cesare, G.; La Monica, S.; Maiello, G.; Masini, G.; Proverbio, E.; Ferrari, A.; Chitica, N.; Dinescu, M.; Alexandrescu, R.; Morjan, I.; Rotiu, E.

    1996-10-01

    Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers. The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser. The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment.

  2. Schottky diode silicon liquid-crystal light valve

    NASA Astrophysics Data System (ADS)

    Sayyah, Keyvan; Efron, Uzi; Forber, Richard A.; Goodwin, Norman W.; Reif, Philip G.

    1991-06-01

    The authors report the operation of the Hughes Schottky diode-based silicon liquid crystal light valve (SLV) using readout light in the visible region. Limiting resolutions of 28 lp/mm limited by the Schottky diode periodicity, contrast ratios of >100:1, visible input light sensitivities of better than 50 (mu) W/cm2, and response times as fast as 5 ms have been measured. Both standard twisted nematic and homeotropically-aligned liquid crystal configurations have been utilized. The main parameter of this device is the leakage current of the Schottky diodes.

  3. Simulation of Electronic Center Formation by Irradiation in Silicon Crystals

    NASA Astrophysics Data System (ADS)

    Yeritsyan, H. N.; Sahakyan, A. A.; Grigoryan, N. E.; Harutyunyan, V. V.; Tsakanov, V. M.; Grigoryan, B. A.; Yeremyan, A. S.; Amatuni, G. A.

    2017-02-01

    We present the results of a study on localized electronic centers formed in crystals by external influences (impurity introduction and irradiation). The main aim is to determine the nature of these centers in the forbidden gap of the energy states of the crystal lattice. For the case of semiconductors, silicon (Si) was applied as model material to determine the energy levels and concentration of radiation defects for application to both doped and other materials. This method relies on solving the appropriate equation describing the variation of the charge carrier concentration as a function of temperature n( T) for silicon crystals with two different energy levels and for a large set of N 1, N 2 (concentrations of electronic centers at each level), and n values. A total of almost 500 such combinations were found. For silicon, energy level values of ɛ 1 = 0.22 eV and ɛ 2 = 0.34 eV were used for the forbidden gap (with corresponding slopes determined from experimental temperature-dependent Hall-effect measurements) and compared with photoconductivity spectra. Additionally, it was shown that, for particular correlations among N 1, N 2, and n, curve slopes of ɛ 1/2 = 0.11 eV, ɛ 2/2 = 0.17 eV, and α = 1/2( ɛ 1 + ɛ 2) = 0.28 eV also apply. Comparison between experimental results for irradiation of silicon crystals by 3.5-MeV energy electrons and Co60 γ-quanta revealed that the n( T) curve slopes do not always coincide with the actual energy levels (electronic centers).

  4. Phase-sensitive amplification in silicon photonic crystal waveguides.

    PubMed

    Zhang, Yanbing; Husko, Chad; Schröder, Jochen; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Eggleton, Benjamin J

    2014-01-15

    We experimentally demonstrate phase-sensitive amplification in a silicon photonic crystal waveguide based on pump-degenerate four-wave mixing. An 11 dB phase-extinction ratio is obtained in a record compact 196 μm nanophotonic device due to broadband slow light, in spite of the presence of two-photon absorption and free carriers. Numerical calculations show good agreement with the experimental results.

  5. Silicon single-crystal cryogenic optical resonator.

    PubMed

    Wiens, Eugen; Chen, Qun-Feng; Ernsting, Ingo; Luckmann, Heiko; Rosowski, Ulrich; Nevsky, Alexander; Schiller, Stephan

    2014-06-01

    We report on the demonstration and characterization of a silicon optical resonator for laser frequency stabilization, operating in the deep cryogenic regime at temperatures as low as 1.5 K. Robust operation was achieved, with absolute frequency drift less than 20 Hz over 1 h. This stability allowed sensitive measurements of the resonator thermal expansion coefficient (α). We found that α=4.6×10(-13)  K(-1) at 1.6 K. At 16.8 K α vanishes, with a derivative equal to -6×10(-10)  K(-2). The temperature of the resonator was stabilized to a level below 10 μK for averaging times longer than 20 s. The sensitivity of the resonator frequency to a variation of the laser power was also studied. The corresponding sensitivities and the expected Brownian noise indicate that this system should enable frequency stabilization of lasers at the low-10(-17) level.

  6. Enhanced crystallization of amorphous silicon thin films using embedded silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Anderson, Curtis Michael

    This thesis is concerned with the production of silicon thin films for photovoltaic applications. Much research has been carried out to find a stable, more efficient alternative to amorphous silicon, resulting in a number of various amorphous/crystalline mixed-phase film structures with properties superior to amorphous silicon. This thesis work details a completely new approach to mixed-phase film deposition, focusing on the fast crystallization of these films. The deposition of amorphous silicon films with embedded nanocrystals was carried out via a dual-plasma system. It is known that plasma conditions to produce high quality films are much different from those to produce particles. Hence the experimental system used here involved two separate plasmas to allow the optimum production of the crystalline nanoparticles and the amorphous film. Both plasmas use 13.56 MHz excitation voltage with diluted silane as the silicon precursor. The nanoparticle production reactor is a flow-through device that can be altered to control the size of the particles from around 5--30 nm average diameter. The film production reactor is a parallel-plate capacitively-coupled plasma system, into which the aerosol-suspended nanoparticles were injected. The nanocrystals could either be "co-deposited" simultaneously with the amorphous film, or be deposited separately in a layer-by-layer technique; both approaches are discussed in detail. Measurements of the film conductivity provide for the first time unambiguous evidence that the presence of nanocrystallites above 5 nm in the amorphous film have a direct impact on the electronic properties of co-deposited films. Further measurements of the film structure by transmission electron microscopy (TEM) and Raman spectroscopy demonstrate clearly the effect of embedded nanocrystals on the annealed crystallization process; the immediate growth of the crystal seeds has been observed. Additionally, a newly discovered mechanism of film crystallization

  7. Single crystal ternary oxide ferroelectric integration with Silicon

    NASA Astrophysics Data System (ADS)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  8. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

    SciTech Connect

    Ciszek, T.F.

    1987-03-17

    This patent describes an apparatus for crucible-free growth of a sheet crystal of silicon, the apparatus comprising; means for providing a substantially enclosed space having an inert atmosphere; heating means for sequentially forming molten silicon from a source of substantially pure silicon within the space; means for vertically feeding a silicon source toward the heating means to form a molten layer of silicon at a top of the source; means for drawing a continuous silicon sheet crystal from the molten silicon layer within the space; wherein a meniscus of molten silicon is created by the drawing means. The apparatus includes means to control the shape of the meniscus, and the controlling means includes a repulsive RF generator for repulsive support of the meniscus as a molten silicon sheet crystal is drawn from the molten silicon. A crucible-free, non-dendritic growth method is described for continuously forming a silicon crystal sheet from a rod of substantially pure silicon, the method comprising: employing an RF heating means having first and second portions to provide a molten layer at an end of the silicon rod in an inert atmosphere by actively heating a first region at the end of the silicon rod while preventing an active heating of a second region of the end of the silicon rod.

  9. Detached Solidification of Germanium-Silicon Crystals on the ISS

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  10. Water cooled silicon crystals for X-ray monochromators

    NASA Astrophysics Data System (ADS)

    Wahl, R.; Shah, R.; Jackson, K.; Tonnessen, T.

    1992-07-01

    Insertion devices (wigglers and undulators) proposed for synchrotron radiation sources will produce up to 10 kW/cm2 of thermal loading. In a double crystal monochromator, the first crystal must absorb nearly all of this output power, as it diffracts the desired wavelength to the second crystal. Storage rings currently projected or under construction produce heat loads of this intensity and thus require significantly improved optical element cooling methods to preserve the spectral quality of the output radiation. As beam intensities reach these higher levels, analysis of the thermal performance of passive and actively cooled optical elements becomes more and more critical because such elements are a cost effective means for producing a cooled crystal that performs to its design specifications the first time it is installed in the beamline. The Rocketdyne Division of Rockwell International is applying the experience gained in high energy laser optics research (the design of cooled IR and UV optical components for free electron lasers) to the problems of cooled X-ray monochromator crystals and grazing incidence VUV optics. In this paper, a set of first order parametric calculations and a second order finite element calculation were performed to determine surface temperature rise, coolant pressure drop and surface distortion in a single crystal silicon heat exchanger with heat loads of 100 to 550 W/cm2. Two different heat exchanger designs (microchannels and pin post cell) and two different coolants (water and liquid gallium) were analyzed to assess performance advantages of each.

  11. Thermally actuated resonant silicon crystal nanobalances

    NASA Astrophysics Data System (ADS)

    Hajjam, Arash

    As the potential emerging technology for next generation integrated resonant sensors and frequency references as well as electronic filters, micro-electro-mechanical resonators have attracted a lot of attention over the past decade. As a result, a wide variety of high frequency micro/nanoscale electromechanical resonators have recently been presented. MEMS resonators, as low-cost highly integrated and ultra-sensitive mass sensors, can potentially provide new opportunities and unprecedented capabilities in the area of mass sensing. Such devices can provide orders of magnitude higher mass sensitivity and resolution compared to Film Bulk Acoustic resonators (FBAR) or the conventional quartz and Surface Acoustic Wave (SAW) resonators due to their much smaller sizes and can be batch-fabricated and utilized in highly integrated large arrays at a very low cost. In this research, comprehensive experimental studies on the performance and durability of thermally actuated micromechanical resonant sensors with frequencies up to tens of MHz have been performed. The suitability and robustness of the devices have been demonstrated for mass sensing applications related to air-borne particles and organic gases. In addition, due to the internal thermo-electro-mechanical interactions, the active resonators can turn some of the consumed electronic power back into the mechanical structure and compensate for the mechanical losses. Therefore, such resonators can provide self-sustained-oscillation without the need for any electronic circuitry. This unique property has been deployed to demonstrate a prototype self-sustained sensor for air-borne particle monitoring. I have managed to overcome one of the obstacles for MEMS resonators, which is their relatively poor temperature stability. This is a major drawback when compared with the conventional quartz crystals. A significant decrease of the large negative TCF for the resonators has been attained by doping the devices with a high

  12. Silicon photonic crystal thermal emitter at near-infrared wavelengths.

    PubMed

    O'Regan, Bryan J; Wang, Yue; Krauss, Thomas F

    2015-08-21

    Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (≈1.5 μm) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.

  13. Process for making silicon

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  14. Structure development in silicon sheet by shaped crystallization

    NASA Technical Reports Server (NTRS)

    Leipold, M. H.; De Angelis, R. J.

    1978-01-01

    Models are presented for the development of a parallel twinned structure of the 110 plane type and the 112 line type in silicon ribbons. The models are believed to be mutually compatible and operable. The first model relates the requirements for super-cooling during crystallization. The existence of reentrant angles associated with the twin structure is proposed to provide a rough interface to reduce super-cooling. The spacing of the twins is proposed to be limited by the geometrical relationship between the thermal gradient in the liquid and the dimensions of the twinned crystallization front. The second model relates the thermal stress configuration to detail dislocation reactions which would be expected to develop twins. While a specific dislocation mechanism cannot yet be defined, a number of alternatives are presented. All of these various dislocation mechanisms would result in the observed crystalline configuration and the choice among them is not critical.

  15. Strong Photoluminescence from the Reaction Product of Erbium and Oxygen on Silicon Crystal

    NASA Astrophysics Data System (ADS)

    Suezawa, Masashi; Sumino, Koji

    1994-12-01

    Photoluminescence spectra around 1.5 µm from silicon (Si) doped with erbium (Er) by various methods have been studied. The doping methods that were adopted were annealing after painting of Er(NO3)3 solutions and evaporation of Er on Si surface, and annealing of specimens in the Er vapour. Strong photoluminescence similar to that of Er2O3 was observed only from the damaged surface of n-type Czochralski-grown Si when Er was doped with the last method. Analysis of the damaged surface by the method of electron spectroscopy for chemical analysis (ESCA) showed that Er2O3 was generated on the surface of n-type Cz.Si.

  16. A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth

    NASA Astrophysics Data System (ADS)

    Derby, Jeffrey J.; Tao, Yutao; Reimann, Christian; Friedrich, Jochen; Jauß, Thomas; Sorgenfrei, Tina; Cröll, Arne

    2017-04-01

    We present rigorous numerical modeling and analytical arguments to describe data on the engulfment of silicon carbide particles during silicon crystal growth obtained via advanced terrestrial and microgravity experiments. For the first time in over a decade of research on SiC inclusions in silicon, our model is able to provide a quantitative correlation with experimental results, and we are able to unambiguously identify the underlying physical mechanisms that give rise to the observed behavior of this system. In particular, we identify a significant and previously unascertained interaction between particle-induced interface deflection (originating from the thermal conductivity of the SiC particle being larger than that of the surrounding silicon liquid) and curvature-induced changes in melting temperature arising from the Gibbs-Thomson effect. For a particular range of particle sizes, the Gibbs-Thomson effect flattens the deflected solidification interface, thereby reducing drag on the particle and increasing its critical velocity for engulfment. We show via numerical calculations and analytical reasoning that these effects give rise to a new scaling of the critical velocity to particle size as vc ∼R - 5 / 3 , whereas all prior models have predicted either vc ∼R-1 or vc ∼R - 4 / 3 . This new scaling is needed to quantitatively describe the experimental observations for this system.

  17. Photonic crystal enhanced silicon cell based thermophotovoltaic systems.

    PubMed

    Yeng, Yi Xiang; Chan, Walker R; Rinnerbauer, Veronika; Stelmakh, Veronika; Senkevich, Jay J; Joannopoulos, John D; Soljacic, Marin; Čelanović, Ivan

    2015-02-09

    We report the design, optimization, and experimental results of large area commercial silicon solar cell based thermophotovoltaic (TPV) energy conversion systems. Using global non-linear optimization tools, we demonstrate theoretically a maximum radiative heat-to-electricity efficiency of 6.4% and a corresponding output electrical power density of 0.39 W cm(-2) at temperature T = 1660 K when implementing both the optimized two-dimensional (2D) tantalum photonic crystal (PhC) selective emitter, and the optimized 1D tantalum pentoxide - silicon dioxide PhC cold-side selective filter. In addition, we have developed an experimental large area TPV test setup that enables accurate measurement of radiative heat-to-electricity efficiency for any emitter-filter-TPV cell combination of interest. In fact, the experimental results match extremely well with predictions of our numerical models. Our experimental setup achieved a maximum output electrical power density of 0.10W cm(-2) and radiative heat-to-electricity efficiency of 1.18% at T = 1380 K using commercial wafer size back-contacted silicon solar cells.

  18. Porous silicon photonic crystals for detection of infections

    NASA Astrophysics Data System (ADS)

    Gupta, B.; Guan, B.; Reece, P. J.; Gooding, J. J.

    2012-10-01

    In this paper we demonstrate the possibility of modifying porous silicon (PSi) particles with surface chemistry and immobilizing a biopolymer, gelatin for the detection of protease enzymes in solution. A rugate filter, a one-dimensional photonic crystal, is fabricated that exhibits a high-reflectivity optical resonance that is sensitive to small changes in the refractive index. To immobilize gelatin in the pores of the particles, the hydrogen-terminated silicon surface was first modified with an alkyne, 1,8-nonadiyne via hydrosilylation to protect the silicon surfaces from oxidation. This modification allows for further functionality to be added such as the coupling of gelatin. Exposure of the gelatin modified particles to the protease subtilisin in solution causes a change in the refractive index, resulting in a shift of the resonance to shorter wavelengths, indicating cleavage of organic material within the pores. The ability to monitor the spectroscopic properties of microparticles, and shifts in the optical signature due to changes in the refractive index of the material within the pore space, is demonstrated.

  19. Self-assembled single-crystal silicon circuits on plastic.

    PubMed

    Stauth, Sean A; Parviz, Babak A

    2006-09-19

    We demonstrate the use of self-assembly for the integration of freestanding micrometer-scale components, including single-crystal, silicon field-effect transistors (FETs) and diffusion resistors, onto flexible plastic substrates. Preferential self-assembly of multiple microcomponent types onto a common platform is achieved through complementary shape recognition and aided by capillary, fluidic, and gravitational forces. We outline a microfabrication process that yields single-crystal, silicon FETs in a freestanding, powder-like collection for use with self-assembly. Demonstrations of self-assembled FETs on plastic include logic inverters and measured electron mobility of 592 cm2/V-s. Finally, we extend the self-assembly process to substrates each containing 10,000 binding sites and realize 97% self-assembly yield within 25 min for 100-microm-sized elements. High-yield self-assembly of micrometer-scale functional devices as outlined here provides a powerful approach for production of macroelectronic systems.

  20. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs

    PubMed Central

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K.; Christiansen, Silke; Vollmer, Frank

    2016-01-01

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported. PMID:27113674

  1. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs.

    PubMed

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K; Christiansen, Silke; Vollmer, Frank

    2016-04-26

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported.

  2. Defects in silicon effect on device performance and relationship to crystal growth conditions

    NASA Technical Reports Server (NTRS)

    Jastrzebski, L.

    1985-01-01

    A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

  3. Isotropic behavior of an anisotropic material: single crystal silicon

    NASA Astrophysics Data System (ADS)

    McCarter, Douglas R.; Paquin, Roger A.

    2013-09-01

    Zero defect single crystal silicon (Single-Crystal Si), with its diamond cubic crystal structure, is completely isotropic in most properties important for advanced aerospace systems. This paper will identify behavior of the three most dominant planes of the Single-Crystal Si cube (110), (100) and (111). For example, thermal and optical properties are completely isotropic for any given plane. The elastic and mechanical properties however are direction dependent. But we show through finite element analysis that in spite of this, near-isotropic behavior can be achieved with component designs that utilize the optimum elastic modulus in directions with the highest loads. Using glass frit bonding to assemble these planes is the only bonding agent that doesn't degrade the performance of Single-Crystal Si. The most significant anisotropic property of Single-Crystal Si is the Young's modulus of elasticity. Literature values vary substantially around a value of 145 GPa. The truth is that while the maximum modulus is 185 GPa, the most useful <110< crystallographic direction has a high 169 GPa, still higher than that of many materials such as aluminum and invar. And since Poisson's ratio in this direction is an extremely low 0.064, distortion in the plane normal to the load is insignificant. While the minimum modulus is 130 GPa, a calculated average value is close to the optimum at approximately 160 GPa. The minimum modulus is therefore almost irrelevant. The (111) plane, referred to as the natural cleave plane survives impact that would overload the (110) and/or (100) plane due to its superior density. While mechanical properties vary from plane to plane each plane is uniform and response is predictable. Understanding the Single-Crystal Si diamond cube provides a design and manufacture path for building lightweight Single-Crystal Si systems with near-isotropic response to loads. It is clear then that near-isotropic elastic behavior is achievable in Single-Crystal Si

  4. Digital photofinishing system based on liquid crystal on silicon

    NASA Astrophysics Data System (ADS)

    Zheng, Minmin; Yan, Huimin; Zhang, Xiuda; Du, Yanli

    2006-01-01

    As the digital camera user base grows, so does the demand for digital imaging services. A new digital photo finishing system based on Liquid Crystal On Silicon (LCOS) is presented. The LCOS panel motherboard is made up of CMOS chip. Three individual streams of light (red, green, blue) are directed to corresponding Polarization Beam Spliter (PBS) to make the S polarization beam arrive at LCOS panel. When the Liquid appears light, the S polarization beam is changed to P polarization beam and reflected to pass through Polarization Beam Spliter. Compared with Thin Film Transistor-Liquid Crystal Display (TFT-LCD), LCOS has many merits including high resolution, high contrast, wide viewing angle, low cost and so on. In this work, we focus on the way in which the images will be displayed on LCOS. A liquid crystal on silicon microdisplay driver circuit for digital photo finishing system has been designed and fabricated using BRILLIAN microdisplay driver lite(MDD-LITE) ASIC and LCOS SXGA (1280×1024 pixel) with a 0.78"(20mm) diagonal active matrix reflective mode LCD. The driver includes a control circuit, which presents serial data, serial clock , write protect signals and control signals for LED, and a mixed circuit which implements RGB signal to input the LCOS. According to a minimum error sum of squares algorithm, we find a minimum offset and then shift RGB optical intensity vs voltage curves right and left to make these three curves almost coincide with each other. The design had great application in the digital photo finishing.

  5. Jan Czochralski: Brief sketch of his life and achievements

    NASA Astrophysics Data System (ADS)

    Pajaczkowska, Anna

    2014-09-01

    On the occasion of the 60th anniversary of the death and the approaching centenary of the discovery of the Czochralski method a brief sketch of biography and achievements of Professor Jan Czochralski is presented. Biography and scientific achievements of Jan Czochralski are associated with Kcynia hometown, and to his stay in Berlin, Frankfurt and Warsaw.

  6. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-03-28

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.

  7. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    NASA Astrophysics Data System (ADS)

    Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-03-01

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ˜50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3-10% lower or higher than that of silicon for wavelengths below or beyond ˜815-900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10-100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.

  8. Friction and wear behavior of single-crystal silicon carbide in contact with titanium

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1977-01-01

    Sliding friction experiments were conducted with single crystal silicon carbide in sliding contact with titanium. Results indicate that the friction coefficient is greater in vacuum than in argon and that this is due to the greater adhesion or adhesive transfer in vacuum. Thin films of silicon carbide transferred to titanium also adhered to silicon carbide both in argon at atmospheric pressure and in high vacuum. Cohesive bonds fractured on both the silicon carbide and titanium surfaces. The wear debris of silicon carbide created by fracture plowed the silicon carbide surface in a plastic manner. The friction characteristics of titanium in contact with silicon carbide were sensitive to the surface roughness of silicon carbide, and the friction coefficients were higher for a rough surface of silicon carbide than for a smooth one. The difference in friction results was due to plastic deformation (plowing of titanium).

  9. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    SciTech Connect

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.

  10. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    DOE PAGES

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; ...

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

  11. Lifetime analysis of laser crystallized silicon films on glass

    SciTech Connect

    Kühnapfel, Sven; Amkreutz, Daniel; Gall, Stefan; Huang, Jialiang; Teal, Anthony; Kampwerth, Henner; Varlamov, Sergey

    2015-08-07

    Only recently, the quality of liquid phase crystallized silicon directly on glass substrates made a huge leap towards the quality of multi-crystalline wafers with open circuit voltages well above 600 mV. In this paper, we investigate the material quality in order to identify the factors limiting further performance improvements. We employ photoluminescence imaging on a state of the art test structure with lifetime calibration by transient photoluminescence. The resulting lifetime map is converted into an effective diffusion length map and the origin of regions with short lifetimes is investigated with electron backscattering and transmission electron microscopy. High local dislocation densities in areas with dissociated coincidence site lattice boundaries were found to be responsible for the localised quenching of the photoluminescence signal.

  12. Compact and fast photonic crystal silicon optical modulators.

    PubMed

    Nguyen, Hong C; Hashimoto, Satoshi; Shinkawa, Mizuki; Baba, Toshihiko

    2012-09-24

    We demonstrate the first sub-100 μm silicon Mach-Zehnder modulators (MZMs) that operate at >10 Gb/s, by exploiting low-dispersion slow-light in lattice-shifted photonic crystal waveguides (LSPCWs). We use two LSPCW-MZM structures, one with LSPCWs in both arms of the MZM, and the other with an LSPCW in only one of the arms. Using the first structure we demonstrate 10 Gb/s operation with a operating bandwidth of 12.5 nm, in a device with a phase-shifter length of only 50 μm. Using the second structure, owing to a larger group index as well as lower spectral noise, we demonstrate 40 Gb/s operation with a phase-shifter length of only 90 μm, which is more than an order-of-magnitude shorter than most 40 Gb/s MZMs.

  13. Optical nonreciprocal transmission in an asymmetric silicon photonic crystal structure

    SciTech Connect

    Wu, Zheng; Chen, Juguang; Ji, Mengxi; Huang, Qingzhong; Xia, Jinsong; Wang, Yi E-mail: ywangwnlo@mail.hust.edu.cn; Wu, Ying E-mail: ywangwnlo@mail.hust.edu.cn

    2015-11-30

    An optical nonreciprocal transmission (ONT) is realized by employing the nonlinear effects in a compact asymmetric direct-coupled nanocavity-waveguide silicon photonic crystal structure with a high loaded quality factor (Q{sub L}) of 42 360 and large extinction ratio exceeding 30 dB. Applying a single step lithography and successive etching, the device can realize the ONT in an individual nanocavity, alleviating the requirement to accurately control the resonance of the cavities. A maximum nonreciprocal transmission ratio of 21.1 dB as well as a working bandwidth of 280 pm in the telecommunication band are obtained at a low input power of 76.7 μW. The calculated results by employing a nonlinear coupled-mode model are in good agreement with the experiment.

  14. Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys

    NASA Astrophysics Data System (ADS)

    Summonte, C.; Rizzoli, R.; Servidori, M.; Milita, S.; Nicoletti, S.; Bianconi, M.; Desalvo, A.; Iencinella, D.

    2004-10-01

    Laser induced crystallization of hydrogenated amorphous silicon carbon alloy (a-Si1-xCx:H) films has been investigated by means of synchrotron x-ray diffraction. The a-Si1-xCx:H films were deposited on (100) silicon wafers by very high frequency plasma enhanced chemical vapor deposition at 100MHz in hydrogen diluted silane-methane gas mixtures. The substrate was kept at 250°C or 350°C and the stoichiometry was changed from x =0.20 to 0.63. The structural characterization of the as-grown films has been carried out by Rutherford backscattering (hydrogen concentration) and infrared spectroscopy (film ordering). The films were irradiated by a KrF excimer laser (248nm ) with varying energy density and number of pulses. After irradiation, the formation of SiC crystallites has been revealed by synchrotron x-ray diffraction. Besides SiC nanocrystals, the formation of crystalline Si and graphite is observed for under- (x <0.50) and over-stoichiometric (x>0.50) samples, respectively. The essential role played by hydrogen concentration and hydrogen bonding configuration in determining the melting threshold and the consequent SiC grain formation is highlighted.

  15. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  16. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  17. Ferromagnetism in Silicon Single Crystals with Positively Charged Vacancy Clusters

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Zhang, Xinghong; Yuan, Quan; Han, Jiecai; Zhou, Shengqiang; Song, Bo

    Defect-induced ferromagnetism provides an alternative for organic and semiconductor spintronics. Here, we investigated the magnetism in Silicon after neutron irradiation and try to correlate the observed magnetism to particular defects in Si. Commercially available p-type Si single crystal wafer is cut into pieces for performing neutron irradiations. The magnetic impurities are ruled out as they can not be detected by secondary ion mass spectroscopy. With positron annihilation lifetime spectroscopy, the positron trapping center corresponding to lifetime 375 ps is assigned to a kind of stable vacancy clusters of hexagonal rings (V6) and its concentration is enhanced by increasing neutron doses. After irradiation, the samples still show strong diamagnetism. The weak ferromagnetic signal in Si after irradiation enhances and then weakens with increasing irradiation doses. The saturation magnetization at room temperature is almost the same as that at 5 K. The X-ray magnetic circular dichroism further provides the direct evidence that Silicon is the origin of this ferromagnetism. Using first-principles calculations, it is found that positively charged V6 brings the spin polarization and the defects have coupling with each other. The work is financially supported by the Helmholtz Postdoc Programme (Initiative and Networking Fund, PD-146).

  18. Process development for single-crystal silicon solar cells

    NASA Astrophysics Data System (ADS)

    Bohra, Mihir H.

    Solar energy is a viable, rapidly growing and an important renewable alternative to other sources of energy generation because of its abundant supply and low manufacturing cost. Silicon still remains the major contributor for manufacturing solar cells accounting for 80% of the market share. Of this, single-crystal solar cells account for half of the share. Laboratory cells have demonstrated 25% efficiency; however, commercial cells have efficiencies of 16% - 20% resulting from a focus on implementation processes geared to rapid throughput and low cost, thereby reducing the energy pay-back time. An example would be the use of metal pastes which dissolve the dielectric during the firing process as opposed to lithographically defined contacts. With current trends of single-crystal silicon photovoltaic (PV) module prices down to 0.60/W, almost all other PV technologies are challenged to remain cost competitive. This presents a unique opportunity in revisiting the PV cell fabrication process and incorporating moderately more expensive IC process practices into PV manufacturing. While they may drive the cost toward a 1/W benchmark, there is substantial room to "experiment", leading to higher efficiencies which will help maintain the overall system cost. This work entails a turn-key process designed to provide a platform for rapid evaluation of novel materials and processes. A two-step lithographic process yielding a baseline 11% - 13% efficient cell is described. Results of three studies have shown improvements in solar cell output parameters due to the inclusion of a back-surface field implant, a higher emitter doping and also an additional RCA Clean.

  19. Silicon crystals: Process for manufacturing wafer-like silicon crystals with a columnar structure

    NASA Technical Reports Server (NTRS)

    Authier, B.

    1978-01-01

    Wafer-like crystals suitable for making solar cells are formed by pouring molten Si containing suitable dopants into a mold of the desired shape and allowing it to solidify in a temperature gradient, whereby the large surface of the melt in contact with the mold is kept at less than 200 D and the free surface is kept at a temperature of 200-1000 D higher, but below the melting point of Si. The mold can also be made in the form of a slit, whereby the 2 sides of the mold are kept at different temperatures. A mold was milled in the surface of a cylindrical graphite block 200 mm in diameter. The granite block was induction heated and the bottom of the mold was cooled by means of a water-cooled Cu plate, so that the surface of the mold in contact with one of the largest surfaces of the melt was held at approximately 800 D. The free surface of the melt was subjected to thermal radiation from a graphite plate located 2 mm from the surface and heated to 1500 D. The Si crystal formed after slow cooling to room temperature had a columnar structure and was cut with a diamond saw into wafers approximately 500 mm thick. Solar cells prepared from these wafers had efficiencies of 10 to 11%.

  20. High purith low defect FZ silicon

    NASA Technical Reports Server (NTRS)

    Kimura, H.; Robertson, G.

    1985-01-01

    The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.

  1. The effect of pulse energy on the removal form of silicon crystal in electrical discharge machining

    NASA Astrophysics Data System (ADS)

    Mingbo, Qiu; Zongjun, Tian; Ye, Tian; Lida, Shen; Haoran, Chen; Hao, Ding

    2016-09-01

    A single-pulse discharge system for semiconductors was designed and produced. Single-pulse discharge experiments with single-crystal silicon were conducted, and the morphology of the electric erosion pit under different discharge energy levels was observed. Three removal forms, namely, heat removal, stress removal, and secondary crushing in electrical discharge machining (EDM) of single-crystal silicon, were discovered, and the mechanisms of semiconductor discharge processing were described. Finally, the role of different removal forms in single-crystal silicon EDM was explained and verified.

  2. Crystallization of the glassy grain boundary phase in silicon nitride ceramics

    NASA Technical Reports Server (NTRS)

    Drummond, Charles H., III

    1991-01-01

    The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

  3. Dual exposure, two-photon, conformal phasemask lithography for three dimensional silicon inverse woodpile photonic crystals

    SciTech Connect

    Shir, Daniel J.; Nelson, Erik C.; Chanda, Debashis; Brzezinski, Andrew; Braun, Paul V.; Rogers, John A.; Wiltzius, Pierre

    2010-01-01

    The authors describe the fabrication and characterization of three dimensional silicon inverse woodpile photonic crystals. A dual exposure, two-photon, conformal phasemask technique is used to create high quality polymer woodpile structures over large areas with geometries that quantitatively match expectations based on optical simulations. Depositing silicon into these templates followed by the removal of the polymer results in silicon inverse woodpile photonic crystals for which calculations indicate a wide, complete photonic bandgap over a range of structural fill fractions. Spectroscopic measurements of normal incidence reflection from both the polymer and siliconphotonic crystals reveal good optical properties.

  4. Electrical and Structural Characterization of Web Dendrite Crystals

    NASA Technical Reports Server (NTRS)

    Schwuttke, G. H.; Koliwad, K.; Dumas, K. A.

    1985-01-01

    Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.

  5. Carbon-nanotube electron-beam (C-beam) crystallization technique for silicon TFTs

    NASA Astrophysics Data System (ADS)

    Lee, Su Woong; Kang, Jung Su; Park, Kyu Chang

    2016-02-01

    We introduced a carbon-nanotube (CNT) electron beam (C-beam) for thin film crystallization and thin film transistor (TFT) applications. As a source of electron emission, a CNT emitter which had been grown on a silicon wafer with a resist-assisted patterning (RAP) process was used. By using the C-beam exposure, we successfully crystallized a silicon thin film that had nano-sized crystalline grains. The distribution of crystalline grain size was about 10 ˜ 30 nm. This nanocrystalline silicon thin film definitely had three crystalline directions which are (111), (220) and (311), respectively. The silicon TFTs crystallized by using a C-beam exposure showed a field effect mobility of 20 cm2/Vs and an on/off ratio of more than 107. The C-beam exposure can modify the bonding network of amorphous silicon with its proper energy.

  6. Silicon ingot casting: Heat exchanger method. Multi-wire slicing: Fixed abrasive slicing technique, phase 3

    NASA Technical Reports Server (NTRS)

    Schmid, F.; Khattak, C. P.

    1979-01-01

    In the area of ingot casting the proof of concept of heat exchanger method (HEM) was established. It was also established that HEM cast silicon yielded solar cell performance comparable to Czochralski grown material. Solar cells with conversion efficiencies of up to 15% were fabricated. It was shown that square cross-section ingots can be cast. In the area of crystal slicing, it was established that silicon can be sliced efficiently with the fixed abrasive slicing technique approach. This concept was carried forward to 10 cm diameter workpiece.

  7. Environmental Qualification of a Single-Crystal Silicon Mirror for Spaceflight Use

    NASA Technical Reports Server (NTRS)

    Hagopian, John; Chambers, John; Rohrback. Scott; Bly, Vincent; Morell, Armando; Budinoff, Jason

    2013-01-01

    This innovation is the environmental qualification of a single-crystal silicon mirror for spaceflight use. The single-crystal silicon mirror technology is a previous innovation, but until now, a mirror of this type has not been qualified for spaceflight use. The qualification steps included mounting, gravity change measurements, vibration testing, vibration- induced change measurements, thermal cycling, and testing at the cold operational temperature of 225 K. Typical mirrors used for cold applications for spaceflight instruments include aluminum, beryllium, glasses, and glass-like ceramics. These materials show less than ideal behavior after cooldown. Single-crystal silicon has been demonstrated to have the smallest change due to temperature change, but has not been spaceflight-qualified for use. The advantage of using a silicon substrate is with temperature stability, since it is formed from a stress-free single crystal. This has been shown in previous testing. Mounting and environmental qualification have not been shown until this testing.

  8. THE CRYSTAL STRUCTURE OF THE NEW SILICON CARBIDE POLYMORPH 69R,

    DTIC Science & Technology

    The 69R polymorph is one of the 32 silicon carbide polymorphs recently discovered by us. The space group is R3m and the unit cell is hexagonal with...and in two industrial silicon carbide crystal plates. They all pair with the fundamental type 6H. The five ways of pairing are: 6H + 69R + 87R, 6H

  9. Surface morphological instability of silicon (100) crystals under microwave ion physical etching

    NASA Astrophysics Data System (ADS)

    Yafarov, R. K.; Shanygin, V. Ya.

    2016-02-01

    This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etching in an argon atmosphere. For the first time, the effect of the electronic properties on the morphological characteristics and the surface free energy of silicon crystals is experimentally shown and proven by physicochemical methods.

  10. Structural and energy properties of interstitial molecular hydrogen in single-crystal silicon

    SciTech Connect

    Melnikov, V. V.

    2015-06-15

    The structural and energy characteristics of interstitial molecular hydrogen in single-crystal silicon are theoretically studied. The dependence of the potential energy of the system on the position and orientation of the interstitial defect is investigated, and the mechanism of interaction of a hydrogen molecule with a silicon crystal is considered. A three-dimensional model is employed to calculate the energy spectrum of H{sub 2} in Si, and the obtained dispersion law is analyzed.

  11. X-ray and magnetic-field-enhanced change in physical characteristics of silicon crystals

    NASA Astrophysics Data System (ADS)

    Makara, V. A.; Steblenko, L. P.; Krit, A. N.; Kalinichenko, D. V.; Kurylyuk, A. N.; Naumenko, S. N.

    2012-07-01

    The effect of low-energy ( W = 8 keV) low-dose ((0.3-7.3) × 102 Gy) radiation and a dc magnetic field ( B = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which manifest themselves upon only X-ray exposure and combined (X-ray and magnetic) exposure, have been revealed.

  12. Porous silicon-based two-dimensional photonic crystal for biochemical sensing applications

    NASA Astrophysics Data System (ADS)

    Mo, Jiaqing; Lv, Xiaoyi; Jia, Zhenhong

    2016-11-01

    Various porous silicon-based photonic device structures has attracted more attention for use as biochemical optical sensors. In this study, we have designed and characterized porous silicon-based two-dimensional photonic crystal waveguide structure as an optical biosensor. Field intensity distribution of two-dimensional photonic crystal waveguide was simulated using COMSOL Multiphysics. When the refractive index changes, the field strength changes greatly. This study lays the theoretical foundation for further work.

  13. Growing Single Crystals From Low-Purity Silicon

    NASA Technical Reports Server (NTRS)

    Schmid, F.

    1984-01-01

    Heat exchanger method continuously moves impurities to outside of growth interface. Silicon heated in crucible to above melting point, and melted silicon then solidified by extracting heat from bottom of crucible by means of heat exchanger.

  14. Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

    1979-01-01

    The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.

  15. Microstructural analysis of the crystallization of silicon ribbons produced by the RGS process

    SciTech Connect

    Steinbach, I.; Hoefs, H.U.

    1997-12-31

    The microstructural evolution of multicrystalline silicon ribbons produced by the RGS process (Ribbon Growth on Substrate) is analyzed by numerical simulation. The crystallization model takes into account the faceted growth structure of silicon, thermal supercooling in front of the crystallization front and nucleation dependent on the thermal supercooling. The thermal conditions for the crystallization of the ribbon are taken from a macroscopic finite element simulation of the RGS process, as it is realized at Bayer AG, Germany. Different crystallization morphologies--single crystal, columnar multicrystal or dendritic--are discussed in their dependence on the process and nucleation conditions. The numerical results are compared to morphologies of silicon ribbons, grown on the pilot plant of Bayer AG, Germany.

  16. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

    DOEpatents

    Ciszek, T.F.

    1984-09-12

    Apparatus is provided for continuously forming a silicon crystal sheet from a silicon rod in a non-crucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed which can be used for micro-circuitry chips or solar cells.

  17. Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

    DOEpatents

    Ciszek, Theodore F.

    1987-01-01

    Apparatus for continuously forming a silicon crystal sheet from a silicon rod in a noncrucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed that can be used for microcircuitry chips or solar cells.

  18. Distribution of oxygen in silicon and its effects on electronic characteristics on a microscale

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Rava, P.; Lagowski, J. J.

    1980-01-01

    The microdistribution of oxygen in silicon was obtained by scanning IR absorption in as grown Czochralski crystals. The crystals were subsequently submitted to various heat treatments. The profiles of the generated thermal donors were determined by spreading resistance measurements. Contrary to the prevailing views, it was found that the concentration of the activated thermal donors is not strictly a function of the oxygen concentration, but depends strongly on an additional factor, which was shown to be associated with vacancy concentration. These conclusions could only be reached on the basis of microscale characterization. In fact, commonly employed macroscale analysis has led to erroneous conclusions.

  19. SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon

    SciTech Connect

    Reedy, R. C.; Young, D.; Branz, H. M.; Wang, Q.

    2005-11-01

    Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process

  20. High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

    SciTech Connect

    Caër, Charles; Le Roux, Xavier; Cassan, Eric

    2013-12-16

    We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics.

  1. Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

    NASA Technical Reports Server (NTRS)

    Choi, Doo Jin; Scott, William D.

    1987-01-01

    The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

  2. Dendritic web silicon for solar cell application

    NASA Technical Reports Server (NTRS)

    Seidensticker, R. G.

    1977-01-01

    The dendritic web process for growing long thin ribbon crystals of silicon and other semiconductors is described. Growth is initiated from a thin wirelike dendrite seed which is brought into contact with the melt surface. Initially, the seed grows laterally to form a button at the melt surface; when the seed is withdrawn, needlelike dendrites propagate from each end of the button into the melt, and the web portion of the crystal is formed by the solidification of the liquid film supported by the button and the bounding dendrites. Apparatus used for dendritic web growth, material characteristics, and the two distinctly different mechanisms involved in the growth of a single crystal are examined. The performance of solar cells fabricated from dendritic web material is indistinguishable from the performance of cells fabricated from Czochralski grown material.

  3. Thermal oxidation of 3C silicon carbide single-crystal layers on silicon

    NASA Technical Reports Server (NTRS)

    Fung, C. D.; Kopanski, J. J.

    1984-01-01

    Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.

  4. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  5. Impurities in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.

    1985-01-01

    Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

  6. Surface property modification of silicon

    NASA Technical Reports Server (NTRS)

    Danyluk, S.

    1984-01-01

    The main emphasis of this work has been to determine the wear rate of silicon in fluid environments and the parameters that influence wear. Three tests were carried out on single crystal Czochralski silicon wafers: circular and linear multiple-scratch tests in fluids by a pyramidal diamond simulated fixed-particle abrasion; microhardness and three-point bend tests were used to determine the hardness and fracture toughness of abraded silicon and the extent of damage induced by abrasion. The wear rate of (100) and (111) n and p-type single crystal Cz silicon abraded by a pyramidal diamond in ethanol, methanol, acetone and de-ionized water was determined by measuring the cross-sectional areas of grooves of the circular and linear multiple-scratch tests. The wear rate depends on the loads on the diamond and is highest for ethanol and lowest for de-ionized water. The surface morphology of the grooves showed lateral and median cracks as well as a plastically deformed region. The hardness and fracture toughness are critical parameters that influence the wear rate. Microhardness tests were conducted to determine the hardness as influenced by fluids. Median cracks and the damage zone surrounding the indentations were also related to the fluid properties.

  7. Channeling, Volume Reection and Gamma Emission Using 14GeV Electrons in Bent Silicon Crystals

    SciTech Connect

    Benson, Brandon

    2015-08-14

    High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact when compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.

  8. Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

    NASA Technical Reports Server (NTRS)

    Zoutendyk, J. A.

    1976-01-01

    Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

  9. Advances in large-diameter liquid encapsulated Czochralski GaAs

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1982-01-01

    The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

  10. Effect of oxygen and nitrogen interactions on friction of single-crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Friction studies were conducted with single-crystal silicon carbide contacting silicon carbide and titanium after having been exposed to oxygen and nitrogen in various forms. After they had been sputter cleaned, the surfaces were (1) exposed to gaseous oxygen and nitrogen (adsorption), (2) ion bombarded with oxygen and nitrogen, or (3) reacted with oxygen (SiC only). Auger emission spectroscopy was used to determine the presence of oxygen and nitrogen. The results indicate that the surfaces of silicon carbide with reacted and ion-bombarded oxygen ions give higher coefficients of friction than do argon sputter-cleaned surfaces. The effects of oxygen on friction may be related to the relative chemical, thermodynamic properties of silicon, carbon, and titanium for oxygen. The adsorbed films of oxygen, nitrogen, and mixed gases of oxygen and nitrogen on sputter-cleaned, oxygen-ion bombarded, and oxygen-reacted surfaces generally reduce friction. Adsorption to silicon carbide is relatively weak.

  11. Crystal growth for high-efficiency silicon solar cells workshop: Summary

    NASA Technical Reports Server (NTRS)

    Dumas, K. A.

    1985-01-01

    The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

  12. The development of an inspection system for defects in silicon crystal growth

    NASA Astrophysics Data System (ADS)

    Liu, Ya-Cheng; Tsai, Hsin-Yi; Hung, Min-Wei; Huang, Kuo-Cheng

    2013-03-01

    This study presents an inspection system to detect the growth defects of silicon crystals that comprise a CCD camera, an LED light source, and power modulation. The defects on multicrystalline silicon can be observed clearly while the silicon wafer were irradiated by the red LED light at a small lighting angle (i.e., 20-30°). However, the growth defects on monocrystalline silicon wafer were difficult to observe because of it low image intensity. And then, the growth defects image was significantly enhanced when the wafer was illuminated by a white LED (WLED) and rotated at a specific angle (i.e., 23°). The experimental results showed that the WLED illumination system made the growth defects more easily observable than did other LED sources (i.e., red, blue, and green LEDs). In addition, the proposed inspection system can be used for on-line fast detection for quality control of monocrystalline silicon wafer.

  13. Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

    NASA Astrophysics Data System (ADS)

    Vetter, Michael; Schwuchow, Anka; Andrä, Gudrun

    2016-12-01

    The room temperature photoluminescence (PL) spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.

  14. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    NASA Astrophysics Data System (ADS)

    Xiao, Chen; Guo, Jian; Zhang, Peng; Chen, Cheng; Chen, Lei; Qian, Linmao

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing.

  15. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    PubMed Central

    Xiao, Chen; Guo, Jian; Zhang, Peng; Chen, Cheng; Chen, Lei; Qian, Linmao

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing. PMID:28084433

  16. Titanium distribution profiles obtained by luminescence and LIBS measurements on Ti: Al2O3 grown by Czochralski and Kyropoulos techniques

    NASA Astrophysics Data System (ADS)

    Alombert-Goget, Guillaume; Trichard, Florian; Li, Hui; Pezzani, Cyril; Silvestre, Maud; Barthalay, Nicolas; Motto-Ros, Vincent; Lebbou, Kheirreddine

    2017-03-01

    The titanium distributions in Ti-doped sapphires grown by Czochralski and Kyropoulos techniques were evaluated using Laser-Induced Breakdown Spectroscopy (LIBS) and luminescence characterizations. Distinctly different radial profiles of Ti4+ distribution were observed in the as grown Ti: Al2O3 crystals. The Ti4+ distribution in the crystal grown by Kyropoulos technique was analyzed as a function of the specific of the growth technique, the conclusion is significant for Ti: sapphire on laser application. Kyropoulos technique presents an advantage to reduce the proportion of Ti4+ in Ti: sapphire comparing to Czochralski technique.

  17. Silicon nano-membrane based photonic crystal microcavities for high sensitivity bio-sensing.

    PubMed

    Lai, Wei-Cheng; Chakravarty, Swapnajit; Zou, Yi; Chen, Ray T

    2012-04-01

    We experimentally demonstrated photonic crystal microcavity based resonant sensors coupled to photonic crystal waveguides in silicon nano-membrane on insulator for chemical and bio-sensing. Linear L-type microcavities are considered. In contrast to cavities with small mode volumes, but low quality factors for bio-sensing, we showed increasing the length of the microcavity enhances the quality factor of the resonance by an order of magnitude and increases the resonance wavelength shift while retaining compact device characteristics. Q~26760 and sensitivity down to 15 ng/ml and ~110 pg/mm2 in bio-sensing was experimentally demonstrated on silicon-on-insulator devices.

  18. Silicon nano-membrane based photonic crystal microcavities for high sensitivity bio-sensing

    PubMed Central

    Lai, Wei-Cheng; Chakravarty, Swapnajit; Zou, Yi; Chen, Ray T.

    2012-01-01

    We experimentally demonstrated photonic crystal microcavity based resonant sensors coupled to photonic crystal waveguides in silicon nano-membrane on insulator for chemical and bio-sensing. Linear L-type microcavities are considered. In contrast to cavities with small mode volumes, but low quality factors for bio-sensing, we showed increasing the length of the microcavity enhances the quality factor of the resonance by an order of magnitude and increases the resonance wavelength shift while retaining compact device characteristics. Q~26760 and sensitivity down to 15 ng/ml and~110 pg/mm2 in bio-sensing was experimentally demonstrated on silicon-on-insulator devices. PMID:22466197

  19. Density comparison measurements of silicon crystals by a pressure-of-flotation method at NMIJ

    NASA Astrophysics Data System (ADS)

    Waseda, A.; Fujii, K.

    2004-04-01

    A new density comparison apparatus based on a pressure-of-flotation method (PFM) is presented. Density comparison measurements are performed for a new silicon crystal of the National Metrology Institute of Japan (NMIJ) for the density standard and determination of the Avogadro constant. The density comparison measurement of silicon crystals by the new PFM apparatus has an estimated relative standard uncertainty of 4.0 × 10-8. Adjusted values of density are evaluated from the data of the PFM and absolute measurements using a least-squares algorithm, where correlations are taken into consideration.

  20. Heat and mass transfer in semiconductor melts during single-crystal growth processes

    NASA Astrophysics Data System (ADS)

    Kakimoto, Koichi

    1995-03-01

    The quality of large semiconductor crystals grown from melts is significantly affected by the heat and mass transfer in the melts. The current understanding of the phenomena, especially melt convection, is reviewed starting from the results of visualization using model fluids or silicon melt, and continuing to the detailed numerical calculations needed for quantitative modeling of processing with solidification. The characteristics of silicon flows are also reviewed by focusing on the Coriolis force in the rotating melt. Descriptions of flow instabilities are included that show the level of understanding of melt convection with a low Prandtl number. Based on hydrodynamics, the origin of the silicon flow structure is reviewed, and it is discussed whether silicon flow is completely turbulent or has an ordered structure. The phase transition from axisymmetric to nonaxisymmetric flow is discussed using different geometries. Additionally, surface-tension-driven flow is reviewed for Czochralski crystal growth systems.

  1. Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm

    SciTech Connect

    Barabanenkov, M. Yu. Vyatkin, A. F.; Volkov, V. T.; Gruzintsev, A. N.; Il’in, A. I.; Trofimov, O. V.

    2015-12-15

    Single-mode submicrometer-thick strip waveguides on silicon-on-insulator substrates, fabricated by silicon-planar-technology methods are considered. To solve the problem of 1.5-µm wavelength radiation input-output and its frequency filtering, strip diffraction gratings and two-dimensional photonic crystals are integrated into waveguides. The reflection and transmission spectra of gratings and photonic crystals are calculated. The waveguide-mode-attenuation coefficient for a polycrystalline silicon waveguide is experimentally estimated.

  2. Solid-phase crystallization of amorphous silicon nanowire array and optical properties

    NASA Astrophysics Data System (ADS)

    Ishikawa, Ryousuke; Kato, Shinya; Yamazaki, Tatsuya; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2014-02-01

    An amorphous silicon nanowire (a-SiNW) array perpendicular to a glass substrate can be successfully obtained through the metal-assisted chemical etching of amorphous silicon (a-Si) thin films. The solid-phase crystallization of a-SiNWs was carried out by thermal annealing in a forming gas in the temperature range from 600 to 900 °C. The effects of hydrogen in the film and the film morphology on the crystallization of a-SiNWs were investigated by Raman spectroscopy and transmission electron microscopy. A higher hydrogen concentration of a-SiNWs reduced the crystallization temperature, as in a-Si thin films. It was also revealed that the large surface area of the a-SiNW array affected the crystallization process. We also studied the optical property of the fabricated SiNW array and demonstrated its high potential as an active layer in solar cells.

  3. Wear particles of single-crystal silicon carbide in vacuum

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    Sliding friction experiments, conducted in vacuum with silicon carbide /000/ surface in contact with iron based binary alloys are described. Multiangular and spherical wear particles of silicon carbide are observed as a result of multipass sliding. The multiangular particles are produced by primary and secondary cracking of cleavage planes /000/, /10(-1)0/, and /11(-2)0/ under the Hertzian stress field or local inelastic deformation zone. The spherical particles may be produced by two mechanisms: (1) a penny shaped fracture along the circular stress trajectories under the local inelastic deformation zone, and (2) attrition of wear particles.

  4. Single Crystal Growth of Zirconia Utilizing a Skull Melting Technique,

    DTIC Science & Technology

    1979-08-01

    8217 BaSrO 3 , SrTiO3 , and Al 203 was achieved. Some success was achieved in pulling crystals from these melts by the Czochralski technique. The research...500 200 Iron 10 4 Silicon 150 10 Nickel 100 75 Hafnium N.D. N. D. Copper 0.6 0.5 N. 1). - NOT DETECTED The yttrium oxide powder used to stabilize the...zirconium and yttrium . A second scan was taken to define the yttrium distribution across the sample. These distributions were taken at different positions

  5. Micromachined crystal plane on (100) and (110) silicon for optical mirror applications

    NASA Astrophysics Data System (ADS)

    Resnik, Drago; Vrtacnik, Danilo; Aljancic, Uros; Amon, Slavko

    2004-04-01

    Silicon crystal planes that can be potentially used as optical mirrors for deflecting light beams from/to optical fibres aligned in grooves were investigated. Aligning grooves and passive mirror-like planes were formed by wet micromachining in KOH and TMAH etchants with addition of additives such as IPA and Triton surfactant. On (100) silicon, {111}, {110}, {311} mirror planes were realized, while on (110) silicon, {010} and {111} mirror planes were demonstrated for the chosen mask orientation. Characterization of passive mirrors with 632nm incident light was performed by measuring angles and specific shape patterns of reflected light beams and by determination of light scattering due to mirror microroughness. Results show that {111} planes exhibit better surface quality compared to {110} mirrors and lowest scattering, however the reflected angle is 54,74° on (100) silicon. On (110) silicon the 45° reflection angle with {010} crystal planes is obtained by proper mask alignment with very small scattering angle below 3°. For reflecting the beam with 1,33 μm wavelength, sputtered layer of aluminum is used as reflecting coating on silicon mirrors, increasing the reflectivity by 24%.

  6. Modeling phosphorus diffusion gettering of iron in single crystal silicon

    NASA Astrophysics Data System (ADS)

    Haarahiltunen, A.; Savin, H.; Yli-Koski, M.; Talvitie, H.; Sinkkonen, J.

    2009-01-01

    We propose a quantitative model for phosphorus diffusion gettering (PDG) of iron in silicon, which is based on a special fitting procedure to experimental data. We discuss the possibilities of the underlying physics of the segregation coefficient. Finally, we show that the proposed PDG model allows quantitative analysis of gettering efficiency of iron at various processing conditions.

  7. EL2 distributions in doped and undoped liquid encapsulated Czochralski GaAs. [deep donor concentration

    NASA Technical Reports Server (NTRS)

    Holmes, D. E.; Chen, R. T.; Yang, J.

    1983-01-01

    The longitudinal and radial distributions of EL2 in undoped semi-insulating and intentionally doped n-type GaAs crystals grown by the liquid encapsulated Czochralski technique are compared. Longitudinal profiles in undoped crystals are controlled by changes in melt stoichiometry as the crystal is pulled from the melt. EL2 profiles along crystals doped above about 1 x 10 to the 17th/cu cm, on the other hand, are controlled primarily by the carrier concentration as a result of the suppression of EL2 by free electrons. Radial EL2 profiles are typically W shaped and M shaped in undoped and doped (above threshold) crystals, respectively. The origin of these radial profiles is discussed in terms of residual stress, melt stoichiometry, and the suppresion of EL2 by electrons. The results are also discussed in the light of the antisite model for EL2.

  8. Experimental demonstration of analog signal transmission in a silicon photonic crystal L3 resonator.

    PubMed

    Gui, Chengcheng; Zhang, Yong; Du, Jing; Xia, Jinsong; Wang, Jian

    2015-06-01

    We design and fabricate a silicon photonic crystal L3 resonator for chip-scale analog signal transmission. The lattice constant (a) is 420 nm, and the radius of holes (r) is 126 nm. The three holes adjacent to the cavity are laterally shifted by 0.175a, 0.025a and 0.175a, respectively. We experimentally evaluate the performance of silicon photonic crystal L3 resonator for chip-scale analog signal transmission. The spurious free dynamic ranges (SFDRs) of the second-order harmonic distortion (SHD) and the third-order harmonic distortion (THD), which are important factors to assess the analog link performance, are measured for the chip-scale analog signal transmission through the fabricated silicon photonic crystal L3 resonator. The SHD SFDR and THD SFDR are measured to be ~34.6 dB and ~52.2 dB even with the input optical carrier sitting at the dip resonance wavelength of the fabricated silicon photonic crystal L3 resonator. The influences of the optical carrier wavelength and input optical power on the SHD SFDR and THD SFDR are studied in the experiment. The impacts of geometric parameters of the cavity structure (lattice constant, radius of holes, shift of the hole) on the analog signal transmission are also analyzed, showing favorable analog link performance with relatively large fabrication tolerance to design parameters.

  9. Observation of Transparency of Erbium-doped Silicon Nitride in Photonic Crystal Nanobeam Cavities

    DTIC Science & Technology

    2010-06-21

    Neu, and C. Becher, “Design of Photonic Crystal Microcavities in Diamond Films,” Opt. Express 16, 1632-1644 (2008). 9. M. Eichenfield, R. Camacho , J...effort to fabricate light emitting devices with Silicon complementary metal-oxide- semiconductor (Si-CMOS) compat- ible materials. One possible material

  10. Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals

    NASA Astrophysics Data System (ADS)

    Deinega, Alexei; Eyderman, Sergey; John, Sajeev

    2013-06-01

    We compare the efficiency of thin film photonic crystal solar cells consisting of conical pores and nanowires. Solving both Maxwell's equations and the semiconductor drift-diffusion in each geometry, we identify optimal junction and contact positions and study the influence of bulk and surface recombination losses on solar cell efficiency. We find that using only 1 μm of silicon, sculpted in the form of an inverted slanted conical pore photonic crystal film, and using standard contact recombination velocities, solar power conversion efficiency of 17.5% is obtained when the carrier diffusion length exceeds 10 μm. Reducing the contact recombination velocity to 100 cm s-1 yields efficiency up to 22.5%. Further efficiency improvements are possible (with 1 μm of silicon) in a tandem cell with amorphous silicon at the top.

  11. Crystallization behavior of three-dimensional silica fiber reinforced silicon nitride composite

    NASA Astrophysics Data System (ADS)

    Qi, Gongjin; Zhang, Changrui; Hu, Haifeng; Cao, Feng; Wang, Siqing; Jiang, Yonggang; Li, Bin

    2005-10-01

    The crystallization behavior of a new type of ceramic matrix composites, three-dimensional silica fiber reinforced silicon nitride matrix composite prepared by perhydropolysilazane infiltration and pyrolysis, was investigated by X-ray diffractometry and Fourier transform infrared spectroscopy. With the post-annealing treatment of the amorphous as-received composite at elevated tempertures of 1400 and 1600 °C in nitrogen atmosphere, there was remarkable suppression of the crystallization of polymer-derived silicon nitride ceramic matrix into α-Si 3N 4 and silica fibers into α-cristobalite, which was probably attributed to the phase of silicon oxynitrides originating from the strong fiber/matrix interfacial chemical reaction.

  12. Enhanced efficiency of ultrathin (˜500 nm)-film microcrystalline silicon photonic crystal solar cells

    NASA Astrophysics Data System (ADS)

    De Zoysa, Menaka; Ishizaki, Kenji; Tanaka, Yoshinori; Sai, Hitoshi; Matsubara, Koji; Noda, Susumu

    2017-01-01

    Enhancing the absorption of thin-film microcrystalline silicon solar cells at 600-1000 nm wavelengths is very important to the improvement of the energy conversion efficiency. This can be achieved by creating a large number of resonant modes utilizing two-dimensional photonic crystal band edges, which exceeds the Lambertian limit of absorption in random textures. We focus on suppressing the parasitic absorption of back-reflector metal and doped layers in photonic crystal microcrystalline silicon solar cells. We achieve a high active-area current density of 22.6 mA cm-2 for an ultrathin (˜500 nm)-film silicon layer and obtain an active-area efficiency of ˜9.1%, as independently confirmed by the CSMT of AIST.

  13. Single crystal silicon capacitors with low microwave loss in the single photon regime

    NASA Astrophysics Data System (ADS)

    Weber, S. J.; Murch, K. W.; Slichter, D. H.; Vijay, R.; Siddiqi, I.

    2011-04-01

    We have fabricated superconducting microwave resonators in a lumped element geometry using single crystal silicon dielectric parallel plate capacitors with C >2 pF. Aluminum devices with resonant frequencies between 4.0 and 6.5 GHz exhibited an average internal quality factor Qi of 2×105 in the single photon excitation regime at T =20 mK. Attributing the observed loss solely to the capacitive element, our measurements place an upper bound on the loss tangent of the silicon dielectric layer of tan δi=5×10-6. This level of loss is an order of magnitude lower than is currently observed in structures incorporating amorphous dielectric materials, thus making single crystal silicon capacitors an attractive, robust route for realizing long-lived quantum circuits.

  14. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials

    DOEpatents

    Carlson, Frederick M.; Helenbrook, Brian T.

    2016-10-11

    An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

  15. Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

  16. Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal-transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon-shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

  17. Study of polycrystalline silicon obtained by aluminum-induced crystallization depending on process conditions

    NASA Astrophysics Data System (ADS)

    Pereyaslavtsev, Alexander; Sokolov, Igor; Sinev, Leonid

    2016-11-01

    In this paper, we have decided to consider an alternative method of producing polycrystalline silicon and study change of its electrophysical characteristics depending on process parameters. As an alternative low-pressure chemical vapor deposition method appears aluminum-induced crystallization (AIC), which allows to obtain a polycrystalline silicon film is significantly larger grain size, thereby reducing contribution of grain boundaries. A comprehensive study of polycrystalline silicon was carried out using a variety of microscopic (OM, SEM) and spectroscopic (RAMAN, XPS) and diffraction (EBSD, XRD) analytic methods. We also considered possibility of self-doping in AIC, result of which was obtained polycrystalline silicon with different resistance. Additionally considered changes in temperature coefficient of resistance depending on technological parameters of AIC process.

  18. Vertical growth of cadmium sulfide crystals on a silicon substrate

    NASA Astrophysics Data System (ADS)

    Belyaev, A. P.; Rubets, V. P.; Antipov, V. V.

    2017-02-01

    The results of the technological and microscopy studies of the mechanisms of the vertical growth of cadmium sulfide crystals during vacuum synthesis from the vapor phase were reported. Whisker crystals with a diameter from 10 nm to a few micrometers and with a length of dozens of millimeters can be grown by the vacuum vapor phase synthesis in a quasi-closed volume. The results of studies are satisfactorily explained in terms of the classical vapor-liquid-crystal model. The SEM micrographs are presented.

  19. Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

    1984-01-01

    The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

  20. Improved quality control of silicon wafers using novel off-line air pocket image analysis

    NASA Astrophysics Data System (ADS)

    Valley, John F.; Sanna, M. Cristina

    2014-08-01

    Air pockets (APK) occur randomly in Czochralski (Cz) grown silicon (Si) crystals and may become included in wafers after slicing and polishing. Previously the only APK of interest were those that intersected the front surface of the wafer and therefore directly impacted device yield. However mobile and other electronics have placed new demands on wafers to be internally APK-free for reasons of thermal management and packaging yield. We present a novel, recently patented, APK image processing technique and demonstrate the use of that technique, off-line, to improve quality control during wafer manufacturing.

  1. Homogeneity characterization of lattice spacing of silicon single crystals by a self-referenced lattice comparator

    NASA Astrophysics Data System (ADS)

    Fujimoto, H.; Waseda, A.; Zhang, X. W.

    2011-04-01

    The homogeneity of the lattice spacings of silicon single crystals from different origins was characterized. Strain measurements were performed on single crystals from NRLM3, NRLM4 and 28Si-10Pr11 ingots, which are all used to determine the Avogadro constant. NRLM3 and NRLM4 both exhibited clear striations, whereas almost no pattern was obtained for 28Si-10Pr11. The standard deviation of the lattice spacing of the single crystal obtained from 28Si-10Pr11 was 4.7 × 10-9, which enabled the lattice spacing to be determined with a standard uncertainty of 3 × 10-9.

  2. Single-Crystal Silicon: Electrical and Optical Properties

    NASA Astrophysics Data System (ADS)

    Hava, Shlomo; Auslender, Mark

    Electrical and optical properties of crystalline semiconductors are important parts of pure physics and material science research. In addition, knowledge of parameters related to these properties, primarily for silicon and III-V semiconductors, has received a high priority in microelectronics and optoelectronics since the establishment of these industries. For control protocols, emphasis has recently been placed on novel optical measurement techniques, which have proved very promising as nondestructive and even non-contact methods. Earlier they required knowledge of the free-carrier-derived optical constants, related to the electrical conductivity at infrared frequencies, but interest in the optical constants of silicon in the visible, ultraviolet (UV) and soft-X-ray ranges has been revived since the critical dimensions in devices have become smaller.

  3. Friction, deformation and fracture of single-crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1977-01-01

    Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface. Anisotropic friction, deformation and fracture on the basal plane are primarily controlled by the slip system and cleavage.

  4. Deactivation of metastable single-crystal silicon hyperdoped with sulfur

    SciTech Connect

    Simmons, C. B.; Akey, Austin J.; Sullivan, Joseph T.; Buonassisi, Tonio; Krich, Jacob J.; Recht, Daniel; Aziz, Michael J.

    2013-12-28

    Silicon supersaturated with sulfur by ion implantation and pulsed laser melting exhibits broadband optical absorption of photons with energies less than silicon's band gap. However, this metastable, hyperdoped material loses its ability to absorb sub-band gap light after subsequent thermal treatment. We explore this deactivation process through optical absorption and electronic transport measurements of sulfur-hyperdoped silicon subject to anneals at a range of durations and temperatures. The deactivation process is well described by the Johnson-Mehl-Avrami-Kolmogorov framework for the diffusion-mediated transformation of a metastable supersaturated solid solution, and we find that this transformation is characterized by an apparent activation energy of E{sub A}=1.7 ± 0.1 eV. Using this activation energy, the evolution of the optical and electronic properties for all anneal duration-temperature combinations collapse onto distinct curves as a function of the extent of reaction. We provide a mechanistic interpretation of this deactivation based on short-range thermally activated atomic movements of the dopants to form sulfur complexes.

  5. Comparison of ordered and disordered silicon nanowire arrays: experimental evidence of photonic crystal modes.

    PubMed

    Dhindsa, Navneet; Saini, Simarjeet S

    2016-05-01

    We experimentally compared the reflectance between ordered and disordered silicon nanowires to observe the evidence of photonic crystal modes. For similar diameters, the resonance peaks for the ordered nanowires at a spacing of 400 nm was at a shorter wavelength than the disordered nanowires, consistent to the excitation of photonic crystal modes. Furthermore, the resonant wavelength didn't shift while changing the density of the disordered nanowires, whereas there was a significant shift observed in the ordered ones. At an ordered spacing of 800 nm, the resonance wavelength approached that of the disordered structures, indicating that the ordered structures were starting to behave like individual waveguides. To our knowledge, this is the first direct experimental observation of photonic crystal modes in vertical periodic silicon nanowire arrays.

  6. Solar-Grade Silicon from Metallurgical-Grade Silicon Via Iodine Chemical Vapor Transport Purification: Preprint

    SciTech Connect

    Ciszek, T. F.; Wang, T. H.; Page, M. R.; Bauer, R. E.; Landry, M. D.

    2002-05-01

    This conference paper describes the atmospheric-pressure in an ''open'' reactor, SiI2 transfers from a hot (>1100C) Si source to a cooler (>750C) Si substrate and decomposes easily via 2SiI2 Si+ SiI4 with up to 5?m/min deposition rate. SiI4 returns to cyclically transport more Si. When the source is metallurgical-grade Si, impurities can be effectively removed by three mechanisms: (1) differing free energies of formation in forming silicon and impurity iodides; (2) distillation; and (3) differing standard free energies of formation during deposition. Distillation has been previously reported. Here, we focused on mechanisms (1) and (3). We made feedstock, analyzed the impurity levels, grew Czochralski single crystals, and evaluated crystal and photovoltaic properties. Cell efficiencies of 9.5% were obtained. Incorporating distillation (step 2) should increase this to a viable level.

  7. Nematic and blue phase liquid crystals for temperature stabilization and active optical tuning of silicon photonic devices (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Ptasinski, Joanna N.; Khoo, Iam Choon; Fainman, Yeshaiahu

    2015-10-01

    We describe the underlying theories and experimental demonstrations of passive temperature stabilization of silicon photonic devices clad in nematic liquid crystal mixtures, and active optical tuning of silicon photonic resonant structures combined with dye-doped nematic and blue phase liquid crystals. We show how modifications to the resonator device geometry allow for not only enhanced tuning of the resonator response, but also aid in achieving complete athermal operations of silicon photonic circuits. [Ref.: I.C. Khoo, "DC-field-assisted grating formation and nonlinear diffractions in methyl-red dye-doped blue phase liquid crystals," Opt. Lett. 40, 60-63 (2015); J. Ptasinski, I.C. Khoo, and Y. Fainman, "Enhanced optical tuning of modified-geometry resonators clad in blue phase liquid crystals," Opt. Lett. 39, 5435-5438 (2014); J. Ptasinski, I.C. Khoo, and Y. Fainman, "Passive Temperature Stabilization of Silicon Photonic Devices Using Liquid Crystals," Materials 7(3), 2229-2241 (2014)].

  8. Phase transformation during silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Chen, Ruling; Luo, Jianbin; Guo, Dan; Lu, Xinchun

    2008-07-01

    The process of a silica cluster impact on a crystal silicon substrate is studied by molecular dynamics simulation. At the impact loading stage, crystal silicon of the impact zone transforms to a locally ordered molten with increasing the local temperature and pressure of the impact zone. And then the transient molten forms amorphous silicon directly as the local temperature and pressure decrease at the impact unloading stage. Moreover, the phase behavior between the locally ordered molten and amorphous silicon exhibits the reversible structural transition. The transient molten contains not only lots of four-fold atom but also many three- and five-fold atoms. And the five-fold atom is similar to the mixture structure of semi-Si-II and semi-bct5-Si. The structure transformation between five- and four-fold atoms is affected by both pressure and temperature. The structure transformation between three- and four-fold atoms is affected mostly by temperature. The direct structure transformation between five- and three-fold atoms is not observed. Finally, these five- and three-fold atoms are also different from the usual five- and three-fold deficient atoms of amorphous silicon. In addition, according to the change of coordination number of atoms the impact process is divided into six stages: elastic, plastic, hysteresis, phase regressive, adhesion and cooling stages.

  9. Crystallization of silicon films on glass: a comparison of methods. [Flat panel displays

    SciTech Connect

    Lemons, R.A.; Bosch, M.A.; Herbst, D.

    1982-01-01

    The lure of flat panel displays has stimulated much research on the crystallization of silicon films deposited on large-area transparent substrates. In most respects, fused quartz is ideal. It has high purity, thermal shock resistance, and a softening point above the silicon melting temperature. Unfortunately, fused quartz has such a small thermal expansion that the silicon film cracks as it cools. This problem has been attacked by patterning with islands or moats before and after crystallization, by capping, and by using silicate glass substrates that match the thermal expansion of silicon. The relative merits of these methods are compared. Melting of the silicon film to achieve high mobility has been accomplished by a variety of methods including lasers, electron beams, and strip heaters. For low melting temperature glasses, surface heating with a laser or electron beam is essential. Larger grains are obtained with the high bias temperature, strip heater techniques. The low-angle grain boundaries characteristic of these films may be caused by constitutional undercooling. A model is developed to predict the boundary spacing as a function of scan rate and temperature gradient. 11 figures.

  10. Silicon crystal morphologies during solidification refining from Al-Si melts

    NASA Astrophysics Data System (ADS)

    Ullah, Mohammad W.; Carlberg, Torbjörn

    2011-03-01

    To obtain a sound basis for further development of a refining process in which Si is precipitated from aluminium melts, a series of experiments have been performed in a Bridgman furnace. Compositions studied are in the range of 17-38% Si, and experiments have been carried out with the hot zone up and with the hot zone down to study the effects of flotation and sedimentation as well as those of different convection conditions on silicon precipitation. The similarity in density between liquid aluminium and silicon crystals implies that the melt convection is important for the possible separation of the crystals in a gravity field, but the crystal morphologies also have to be controlled to avoid aluminum inclusions. At lower silicon contents the silicon morphologies have a fish-bone or star-like shape but as the Si content increases the morphology changes to a plate-like structure, which becomes coarser with increasing Si concentration. The growth pattern for coarse plates growing as (1 1 1) platelets tend to form pockets of aluminium, which will end up as inclusions during dissolution of the matrix.

  11. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    SciTech Connect

    Höger, Ingmar Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun; Himmerlich, Marcel; Krischok, Stefan

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  12. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    NASA Astrophysics Data System (ADS)

    Höger, Ingmar; Himmerlich, Marcel; Gawlik, Annett; Brückner, Uwe; Krischok, Stefan; Andrä, Gudrun

    2016-01-01

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  13. Optical bistability with a repulsive optical force in coupled silicon photonic crystal membranes

    NASA Astrophysics Data System (ADS)

    Hui, Pui-Chuen; Woolf, David; Iwase, Eiji; Sohn, Young-Ik; Ramos, Daniel; Khan, Mughees; Rodriguez, Alejandro W.; Johnson, Steven G.; Capasso, Federico; Loncar, Marko

    2013-07-01

    We demonstrate actuation of a silicon photonic crystal membrane with a repulsive optical gradient force. The extent of the static actuation is extracted by examining the optical bistability as a combination of the optomechanical, thermo-optic, and photo-thermo-mechanical effects using coupled-mode theory. Device behavior is dominated by a repulsive optical force which results in displacements of ≈1 nm/mW. By employing an extended guided resonance which effectively eliminates multi-photon thermal and electronic nonlinearities, our silicon-based device provides a simple, non-intrusive solution to extending the actuation range of micro-electromechanical devices.

  14. 3D modeling of doping from the atmosphere in floating zone silicon crystal growth

    NASA Astrophysics Data System (ADS)

    Sabanskis, A.; Surovovs, K.; Virbulis, J.

    2017-01-01

    Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.

  15. Modeling of the optical properties of porous silicon photonic crystals in the visible spectral range

    NASA Astrophysics Data System (ADS)

    Dovzhenko, D. S.; Martynov, I. L.; Kryukova, I. S.; Chistyakov, A. A.; Nabiev, I. R.

    2017-01-01

    Optical devices based on photonic crystals are of great interest because they can be efficiently used in laser physics and biosensing. Photonic crystals allow one to control the propagation of electromagnetic waves and to change the emission characteristics of luminophores embedded into photonic structures. One of the most interesting materials for developing one-dimensional photonic crystals is porous silicon. However, an important problem in application of this material is the control of the refractive index of layers by changing their porosity, as well as the refractive index dispersion. In addition, it is important to have the possibility of modeling the optical properties of structures to choose precisely select the fabrication parameters and produce one-dimensional photonic crystals with prescribed properties. In order to solve these problems, we used a mathematical model based on the transfer matrix method, using the Bruggeman model, and on the dispersion of silicon refractive index. We fabricated microcavities by electrochemical etching of silicon, with parameters determined by the proposed model, and measured their reflection spectra. The calculated results showed good agreement with experimental data. The model proposed allowed us to achieve a microcavity Q-factor of 160 in the visible region.

  16. CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform.

    PubMed

    Ooka, Yuta; Tetsumoto, Tomohiro; Fushimi, Akihiro; Yoshiki, Wataru; Tanabe, Takasumi

    2015-06-18

    Progress on the fabrication of ultrahigh-Q photonic-crystal nanocavities (PhC-NCs) has revealed the prospect for new applications including silicon Raman lasers that require a strong confinement of light. Among various PhC-NCs, the highest Q has been recorded with silicon. On the other hand, microcavity is one of the basic building blocks in silicon photonics. However, the fusion between PhC-NCs and silicon photonics has yet to be exploited, since PhC-NCs are usually fabricated with electron-beam lithography and require an air-bridge structure. Here we show that a 2D-PhC-NC fabricated with deep-UV photolithography on a silica-clad silicon-on-insulator (SOI) structure will exhibit a high-Q of 2.2 × 10(5) with a mode-volume of ~ 1.7(λ/n)(3). This is the highest Q demonstrated with photolithography. We also show that this device exhibits an efficient thermal diffusion and enables high-speed switching. The demonstration of the photolithographic fabrication of high-Q silica-clad PhC-NCs will open possibility for mass-manufacturing and boost the fusion between silicon photonics and CMOS devices.

  17. Characterization of dislocation structures in silicon carbide single crystals

    NASA Astrophysics Data System (ADS)

    Vetter, William M.

    1999-07-01

    Two types of defects in PVT-grown 6H and 4H-SiC crystals were studied: screw dislocations that follow the axial direction of the crystal and dislocations that follow directions in the crystal's basal plane. The screw dislocations possessed a range of Burgers vector magnitudes, multiples of the axial parameter c, that could be determined by x-ray topographic image analysis. Hollow cores termed "micropipes" were observed when Burgers, vectors were larger than 3c. The micropipes were studied by a variety of methods: optical microscopy, laser scanning confocal microscopy, scanning electron microscopy, transmission electron microscopy and atomic force microscopy. The micropipes were tubes 0.1 to 10mum in diameter. They were faceted, primarily along the {101¯0} planes, but also had {112¯0} facets. When encountering the growth surface of a crystal, they flared out into a trumpet-shape. Growth spirals sometimes occurred, originating from the trumpets' rims. The screw dislocations are visible in back-reflection synchrotron white beam x-ray topographs of basal-cut SiC wafers in striking contrast as black rings surrounding white circles, though such topographs are contaminated by a series of harmonic reflections, g = (0006n), where n = 3 to 16. By calculating and considering their intensities, and comparison with a g = 00018 Lang topograph taken with CuKalpha1 radiation, the g = 00024 harmonic was shown to be the most important contributor. Basal plane dislocations were seen in x-ray topographs of SiC looping from the points where screw dislocations occurred. Their extinction behavior showed they belonged to the set b = 13 <112¯0>. In some transmission electron micrographs, perfect dislocations with similar extinction behavior, along with partial dislocations with b = 13 <101¯0>, were seen originating from the micropipes' walls, curving out into the crystal a distance of 1 to 3mum, then back to terminate at the micropipe. Others led out of the field of view. Contrast is

  18. Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

    NASA Technical Reports Server (NTRS)

    Chen, R. T.

    1983-01-01

    Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

  19. Theory of High Frequency Rectification by Silicon Crystals

    DOE R&D Accomplishments Database

    Bethe, H. A.

    1942-10-29

    The excellent performance of British "red dot" crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal, C. For high conversion efficiency, the product of this capacity and of the "forward" (bulk) resistance R {sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its length. The contact can therefore have a rather large area which prevents burn-out. For a wavelength of 10 cm. the computations show that the breadth of the knife edge should be less than about 10 {sup -3} cm. For a point contact the radius must be less than 1.5 x 10 {sup -3} cm. and the resulting small area is conducive to burn-out. The effect of "tapping" is probably to reduce the area of contact. (auth)

  20. Silicon photonic crystal cavity enhanced second-harmonic generation from monolayer WSe2

    NASA Astrophysics Data System (ADS)

    Fryett, Taylor K.; Seyler, Kyle L.; Zheng, Jiajiu; Liu, Chang-Hua; Xu, Xiaodong; Majumdar, Arka

    2017-03-01

    Nano-resonators integrated with two-dimensional materials (e.g. transition metal dichalcogenides) have recently emerged as a promising nano-optoelectronic platform. Here we demonstrate resonator-enhanced second-harmonic generation (SHG) in tungsten diselenide using a silicon photonic crystal cavity. By pumping the device with ultrafast laser pulses near the cavity mode at the telecommunication wavelength, we observe a near visible SHG with a narrow linewidth and near unity linear polarization, originated from the coupling of the pump photon to the cavity mode. The observed SHG is enhanced by factor of ∼200 compared to a bare monolayer on silicon. Our results imply the efficacy of cavity integrated monolayer materials for nonlinear optics and the potential of building a silicon-compatible second-order nonlinear integrated photonic platform.

  1. Origin of a Nanoindentation Pop-in Event in Silicon Crystal

    NASA Astrophysics Data System (ADS)

    Abram, R.; Chrobak, D.; Nowak, R.

    2017-03-01

    The Letter concerns surface nanodeformation of Si crystal using atomistic simulation. Our results account for both the occurrence and absence of pop-in events during nanoindentation. We have identified two distinct processes responsible for indentation deformation based on load-depth response, stress-induced evolution of crystalline structure and surface profile. The first, resulting in a pop-in, consists of the extrusion of the crystalline high pressure Si -III /XII phase, while the second, without a pop-in, relies on a flow of amorphized Si to the crystal surface. Of particular interest to silicon technology will be our clarification of the interplay among amorphization, crystal-to-crystal transition, and extrusion of transformed material to the surface.

  2. Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

    PubMed

    Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

    2009-01-05

    We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

  3. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    SciTech Connect

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-11-24

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10{sup 6}) photonic crystal cavities with low mode volume (V{sub m} = 1.062 × (λ/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10{sup 3}.

  4. Experimental setup for investigating silicon solid phase crystallization at high temperatures.

    PubMed

    Schmidt, Thomas; Gawlik, Annett; Schneidewind, Henrik; Ihring, Andreas; Andrä, Gudrun; Falk, Fritz

    2013-07-15

    An experimental setup is presented to measure and interpret the solid phase crystallization of amorphous silicon thin films on glass at very high temperatures of about 800 °C. Molybdenum-SiO(2)-silicon film stacks were irradiated by a diode laser with a well-shaped top hat profile. From the relevant thermal and optical parameters of the system the temperature evolution can be calculated accurately. A time evolution of the laser power was applied which leads to a temperature constant in time in the center of the sample. Such a process will allow the observation and interpretation of solid phase crystallization in terms of nucleation and growth in further work.

  5. High speed liquid crystal over silicon display based on the flexoelectro-optic effect.

    PubMed

    Chen, Jing; Morris, Stephen M; Wilkinson, Timothy D; Freeman, Jon P; Coles, Harry J

    2009-04-27

    One of the key technologies to evolve in the displays market in recent years is liquid crystal over silicon (LCOS) microdisplays. Traditional LCOS devices and applications such as rear projection televisions, have been based on intensity modulation electro-optical effects, however, recent developments have shown that multi-level phase modulation from these devices is extremely sought after for applications such as holographic projectors, optical correlators and adaptive optics. Here, we propose alternative device geometry based on the flexoelectric-optic effect in a chiral nematic liquid crystal. This device is capable of delivering a multilevel phase shift at response times less than 100 microsec which has been verified by phase shift interferometry using an LCOS test device. The flexoelectric on silicon device, due to its remarkable characteristics, enables the next generation of holographic devices to be realized.

  6. Effect of antireflection coating on the crystallization of amorphous silicon films by flash lamp annealing

    NASA Astrophysics Data System (ADS)

    Sonoda, Yuki; Ohdaira, Keisuke

    2017-04-01

    We succeed in decreasing the fluence of a flash-lamp pulse required for the crystallization of electron-beam (EB)-evaporated amorphous silicon (a-Si) films using silicon nitride (SiN x ) antireflection films. The antireflection effect of SiN x is confirmed not only when SiN x is placed on the surface of a-Si or flash lamp annealing (FLA) is performed from the film side, but also when SiN x is inserted between glass and a-Si and a flash pulse is supplied from the glass side. We also quantitatively confirm, by calculating flash-lamp pulse energies actually reaching a-Si films using reflectance spectra, that the reduction in the fluence of a flash-lamp pulse for the crystallization of a-Si films is due to the antireflection effect of SiN x .

  7. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

    PubMed

    Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

    2011-06-20

    We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

  8. On-chip optical diode based on silicon photonic crystal heterojunctions.

    PubMed

    Wang, Chen; Zhou, Chang-Zhu; Li, Zhi-Yuan

    2011-12-19

    Optical isolation is a long pursued object with fundamental difficulty in integrated photonics. As a step towards this goal, we demonstrate the design, fabrication, and characterization of on-chip wavelength-scale optical diodes that are made from the heterojunction between two different silicon two-dimensional square-lattice photonic crystal slabs with directional bandgap mismatch and different mode transitions. The measured transmission spectra show considerable unidirectional transmission behavior, in good agreement with numerical simulations. The experimental realization of on-chip optical diodes with wavelength-scale size using all-dielectric, passive, and linear silicon photonic crystal structures may help to construct on-chip optical logical devices without nonlinearity or magnetism, and would open up a road towards photonic computers.

  9. Elemental characterization of the Avogadro silicon crystal WASO 04 by neutron activation analysis

    NASA Astrophysics Data System (ADS)

    D'Agostino, G.; Bergamaschi, L.; Giordani, L.; Mana, G.; Massa, E.; Oddone, M.

    2012-12-01

    Impurity measurements of the 28Si crystal used for the determination of the Avogadro constant are essential to prevent biased results or underestimated uncertainties. A review of the existing data confirmed the high purity of silicon with respect to a large number of elements. In order to obtain direct evidence of purity, we developed a relative analytical method based on neutron activation. As a preliminary test, this method was applied to a sample of the Avogadro natural silicon crystal WASO 04. The investigation concerned 29 elements. The mass fraction of Au was quantified to be (1.03 ± 0.18) × 10-12. For the remaining 28 elements, the mass fractions were below the detection limits, which ranged between 1 × 10-12 and 1 × 10-5.

  10. Structural Elements of Shallow Thermal Donors Formed in Nitrogen-Gas-Doped Silicon Crystals

    NASA Astrophysics Data System (ADS)

    Hara, Akito

    2007-02-01

    It has been reported that shallow thermal donors (STDs) are formed in oxygen-rich silicon (Si) crystals preannealed in nitrogen gas (N-gas-doped) and also in hydrogen-doped (H-doped) oxygen-rich Si crystals. The STDs formed in these crystals exhibit very similar electronic structures. Experiments using far-infrared optical absorption showed that several hydrogen-like STDs were formed at the same time and their energy levels in both the above-mentioned crystals were very similar. It has also been reported that the g-values of the STDs formed in both the crystals were identical. On the basis of electron-nucleus double resonance results, it has been strongly suggested that a hydrogen impurity is incorporated as a structural element of the STDs formed in the H-doped Si crystals. However, the origin of the STDs that are formed in N-gas-doped Si crystals is still unclear. To clarify this point, hydrogen detection in N-gas-doped Si was conducted and the annealing behaviors of STDs in N-gas-doped Si and H-doped Si were compared by electron spin resonance and far-infrared optical absorption measurement. It was concluded that the origin of the STDs formed in N-gas-doped Si crystals is not related to the hydrogen impurity.

  11. Coupling of silicon-vacancy centers to a single crystal diamond cavity.

    PubMed

    Lee, Jonathan C; Aharonovich, Igor; Magyar, Andrew P; Rol, Fabian; Hu, Evelyn L

    2012-04-09

    Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal diamond membrane generated by ion implantation and electrochemical liftoff followed by homo-epitaxial overgrowth. Whispering gallery modes spectrally overlap with the zero-phonon line (ZPL) of the SiV centers and exhibit quality factors ∼ 2200. Lifetime reduction from 1.8 ns to 1.48 ns is observed from SiV centers in the cavity compared to those in the membrane outside the cavity. These results are pivotal in developing diamond integrated photonics networks.

  12. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    DOEpatents

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  13. Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs.

    PubMed

    Jannesari, R; Schatzl, M; Hackl, F; Glaser, M; Hingerl, K; Fromherz, T; Schäffler, F

    2014-10-20

    We report on the fabrication and characterization of silicon-on-insulator (SOI) photonic crystal slabs (PCS) with commensurately embedded germanium quantum dot (QD) emitters for near-infrared light emission. Substrate pre-patterning defines preferential nucleation sites for the self-assembly of Ge QDs during epitaxial growth. Aligned two-dimensional photonic crystal slabs are then etched into the SOI layer. QD ordering enhances the photoluminescence output as compared to PCSs with randomly embedded QDs. Rigorously coupled wave analysis shows that coupling of the QD emitters to leaky modes of the PCS can be tuned via their location within the unit cell of the PCS.

  14. Optimal light trapping in ultra-thin photonic crystal crystalline silicon solar cells.

    PubMed

    Mallick, Shrestha Basu; Agrawal, Mukul; Peumans, Peter

    2010-03-15

    Crystalline silicon is an attractive photovoltaic material because of its natural abundance, accumulated materials and process knowledge, and its appropriate band gap. To reduce cost, thin films of crystalline silicon can be used. This reduces the amount of material needed and allows material with shorter carrier diffusion lengths to be used. However, the indirect band gap of silicon requires that a light trapping approach be used to maximize optical absorption. Here, a photonic crystal (PC) based approach is used to maximize solar light harvesting in a 400 nm-thick silicon layer by tuning the coupling strength of incident radiation to quasiguided modes over a broad spectral range. The structure consists of a double layer PC with the upper layer having holes which have a smaller radius compared to the holes in the lower layer. We show that the spectrally averaged fraction of photons absorbed is increased 8-fold compared to a planar cell with equivalent volume of active material. This results in an enhancement of maximum achievable photocurrent density from 7.1 mA/cm(2) for an unstructured film to 21.8 mA/cm(2) for a film structured as the double layer photonic crystal. This photocurrent density value approaches the limit of 26.5 mA/cm(2), obtained using the Yablonovitch light trapping limit for the same volume of active material.

  15. Study the performance of LYSO and CeBr3 crystals using Silicon Photomultipliers

    NASA Astrophysics Data System (ADS)

    Kryemadhi, Abaz

    2016-03-01

    The Silicon Photomultipliers (SiPMs) are novel photon-detectors which have been progressively found their use in particle physics. Their small size, good single photon resolution, simple readout, and immunity to magnetic fields offers advantages compared to traditional photomultipliers. LYSO and CeBr3 crystals are relatively new scintillators with high light yield and fast decay time. The response of these detectors to low energy gamma rays and cosmic ray muons will be presented. Messiah College Workload Reallocation Program.

  16. Crystallization of the glassy phase of grain boundaries in silicon nitride

    NASA Technical Reports Server (NTRS)

    Jefferson, D. A.; Thomas, J. M.; Wen, S.

    1984-01-01

    Three types of hot-pressed silicon nitride specimens (containing 5wt% Y2O3 and 2wt% Al2O3 additives) which were subjected to different temperature heat treatments were studied by X-ray diffraction, X-ray microanalysis and high resolution electron microscopy. The results indicated that there were phase changes in the grain boundaries after heat treatment and the glassy phase at the grain boundaries was crystallized by heat treatment.

  17. Observation of four-wave mixing in slow-light silicon photonic crystal waveguides.

    PubMed

    McMillan, James F; Yu, Mingbin; Kwong, Dim-Lee; Wong, Chee Wei

    2010-07-19

    Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conversion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.

  18. Process for making silicon from halosilanes and halosilicons

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1988-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  19. Processing experiments on non-Czochralski silicon sheet

    NASA Technical Reports Server (NTRS)

    Pryor, R. A.; Grenon, L. A.; Sakiotis, N. G.; Pastirik, E. M.; Sparks, T. O.; Legge, R. N.

    1981-01-01

    A program is described which supports and promotes the development of processing techniques which may be successfully and cost-effectively applied to low-cost sheets for solar cell fabrication. Results are reported in the areas of process technology, cell design, cell metallization, and production cost simulation.

  20. Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots

    NASA Astrophysics Data System (ADS)

    Trempa, M.; Beier, M.; Reimann, C.; Roßhirth, K.; Friedrich, J.; Löbel, C.; Sylla, L.; Richter, T.

    2016-11-01

    In this work the dislocation formation in the seed crystal induced by feedstock indentation during the growth of quasimono (QM) silicon ingots for photovoltaic application was investigated. It could be shown by special laboratory indentation experiments that the formed dislocations propagate up to several millimeters deep into the volume of the seed crystal in dependence on the applied pressure of the feedstock particles on the surface of the seed crystal. Further, it was demonstrated that these dislocations if they were not back-melted during the seeding process grow further into the silicon ingot and drastically reduce its material quality. An estimation of the apparent pressure values in a G5 industrial crucible/feedstock setup reveals that the indentation phenomenon is a critical issue for the industrial production of QM silicon ingots. Therefore, some approaches to avoid/reduce the indentation events were tested with the result, that the most promising solution should be the usage of suitable feedstock particles as coverage of the seed.

  1. Liquid crystal colloidal structures for increased silicone deposition efficiency on colour-treated hair.

    PubMed

    Brown, M A; Hutchins, T A; Gamsky, C J; Wagner, M S; Page, S H; Marsh, J M

    2010-06-01

    An approach is described to increase the deposition efficiency of silicone conditioning actives from a shampoo on colour-treated hair via liquid crystal (LC) colloidal structures, created with a high charge density cationic polymer, poly(diallyldimethyl ammonium chloride) and negatively charged surfactants. LCs are materials existing structurally between the solid crystalline and liquid phases, and several techniques, including polarized light microscopy, small angle X-Ray analysis, and differential scanning calorimetry, were used to confirm the presence of the LC structures in the shampoo formula. Silicone deposition from the LC-containing shampoo and a control shampoo was measured on a range of hair substrates, and data from inductively coupled plasma optical emission spectroscopy analysis and ToF-SIMS imaging illustrate the enhancement in silicone deposition for the LC shampoo on all hair types tested, with the most pronounced enhancement occurring on hair that had undergone oxidative treatments, such as colouring. A model is proposed in which the LC structure deposits from the shampoo onto the hair to: (i) provide 'slip planes' along the hair surface for wet conditioning purposes and (ii) form a hydrophobic layer which changes the surface energy of the fibres. This increase in hydrophobicity of the hair surface thereby increases the deposition efficiency of silicone conditioning ingredients. Zeta potential measurements, dynamic absorbency testing analysis and ToF-SIMS imaging were used to better understand the mechanisms of action. This approach to increasing silicone deposition is an improvement relative to conventional conditioning shampoos, especially for colour-treated hair.

  2. DLTS study of the oxygen dimer formation kinetics in silicon

    NASA Astrophysics Data System (ADS)

    Yarykin, Nikolai; Weber, Jörg

    2009-12-01

    The introduction rates of radiation defects, in particular the X- and M-centers for which the oxygen dimer is a precursor, are investigated as a function of duration of the pre-irradiation heat treatment at 480∘ C in Czochralski-grown silicon both of n- and p-types. The characteristic annealing time to grow the X-center concentration in the n-type crystal is found to be about 1 h in accordance with the model which implies no significant barrier for the dimer formation. The M-center concentration in the p-type crystal is found to be nearly independent of duration of the pre-irradiation annealing after a few minutes transient period. This behavior is ascribed to the stabilization of dimer concentration due to an effective dimer trapping in these samples.

  3. Microscopic three-dimensional topometry with ferroelectric liquid-crystal-on-silicon displays.

    PubMed

    Proll, Klaus-Peter; Nivet, Jean-Marc; Körner, Klaus; Tiziani, Hans J

    2003-04-01

    When three dimensional measurements are conducted with fringe projection, the quality of the grating used for the generation of the fringes is important. It has a direct influence on the achievable depth resolution in a given measurement setup. In the past, Ronchi grating or gratings written in nematic liquid-crystal displays or in digital micromirror devices have been used. We report on the application of a reflective ferroelectric liquid-crystal-on-silicon display as the fringe-generating element in a setup based on a stereo microscope. With this device the depth resolution of measurements by use of phase-shifting algorithms can be significantly improved compared with the application of a Ronchi grating or a nematic liquid-crystal display.

  4. Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation

    SciTech Connect

    Volodin, V. A.; Kachko, A. S.

    2011-02-15

    To crystallize hydrogenated amorphous silicon films on glass substrates, pulsed Ti-sapphire laser radiation is used, with a pulse duration less than 30 fs. The initial films are grown by plasma-enhanced chemical-vapor deposition at the temperatures 200 and 250 Degree-Sign C. The structural properties of the initial films and films treated with laser radiation pulses are studied by Raman spectroscopy. The conditions for complete crystallization of the films grown on glass substrates to thicknesses of up to 100 nm and hydrogen content of up to 20 at % are established. The conditions provide the fabrication of highly homogeneous films by scanning laser treatments. It is found that, if the hydrogen content in the film is 30-40 at %, the crystallization is an inhomogeneous process and laser ablation is observed in some areas of the films.

  5. Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

    SciTech Connect

    Zeng, Y.; Roland, I.; Checoury, X.; Han, Z.; El Kurdi, M.; Sauvage, S.; Boucaud, P.; Gayral, B.; Brimont, C.; Guillet, T.; Mexis, M.; Semond, F.

    2015-02-23

    We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarization generated by the second-order nonlinear susceptibilities χ{sub zxx}{sup (2)}, χ{sub zyy}{sup (2)} and the electric fields of the fundamental cavity mode.

  6. Method for fabricating silicon cells

    DOEpatents

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  7. Method for fabricating silicon cells

    DOEpatents

    Ruby, Douglas S.; Basore, Paul A.; Schubert, W. Kent

    1998-08-11

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  8. Thermal expansion coefficient of single-crystal silicon from 7 K to 293 K

    NASA Astrophysics Data System (ADS)

    Middelmann, Thomas; Walkov, Alexander; Bartl, Guido; Schödel, René

    2015-11-01

    We measured the absolute lengths of three single-crystal silicon samples by means of an imaging Twyman-Green interferometer in the temperature range from 7 K to 293 K with uncertainties of about 1 nm. From these measurements we extracted the coefficient of thermal expansion with uncertainties on the order of 1 ×10-9/K . To access the functional dependence of the length on the temperature, usually polynomials are fitted to the data. Instead we used a physically motivated model equation with seven fit parameters for the whole temperature range. The coefficient of thermal expansion is obtained from the derivative of the best fit. The measurements conducted in 2012 and 2014 demonstrate a high reproducibility, and the agreement of two independently produced samples supports single-crystal silicon as a reference material for thermal expansion. Although the results for all three samples agree with each other and with measurements performed at other institutes, they significantly differ from the currently recommended values for the thermal expansion of crystalline silicon.

  9. Crystallization of silicon dioxide and compositional evolution of the Earth's core.

    PubMed

    Hirose, Kei; Morard, Guillaume; Sinmyo, Ryosuke; Umemoto, Koichio; Hernlund, John; Helffrich, George; Labrosse, Stéphane

    2017-03-02

    The Earth's core is about ten per cent less dense than pure iron (Fe), suggesting that it contains light elements as well as iron. Modelling of core formation at high pressure (around 40-60 gigapascals) and high temperature (about 3,500 kelvin) in a deep magma ocean predicts that both silicon (Si) and oxygen (O) are among the impurities in the liquid outer core. However, only the binary systems Fe-Si and Fe-O have been studied in detail at high pressures, and little is known about the compositional evolution of the Fe-Si-O ternary alloy under core conditions. Here we performed melting experiments on liquid Fe-Si-O alloy at core pressures in a laser-heated diamond-anvil cell. Our results demonstrate that the liquidus field of silicon dioxide (SiO2) is unexpectedly wide at the iron-rich portion of the Fe-Si-O ternary, such that an initial Fe-Si-O core crystallizes SiO2 as it cools. If crystallization proceeds on top of the core, the buoyancy released should have been more than sufficient to power core convection and a dynamo, in spite of high thermal conductivity, from as early on as the Hadean eon. SiO2 saturation also sets limits on silicon and oxygen concentrations in the present-day outer core.

  10. CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD

    NASA Astrophysics Data System (ADS)

    Said-Bacar, Z.; Prathap, P.; Cayron, C.; Mermet, F.; Leroy, Y.; Antoni, F.; Slaoui, A.; Fogarassy, E.

    2012-09-01

    This work presents the Continuous Wave (CW) laser crystallization of thin amorphous silicon (a-Si) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Electron Beam Evaporation (EBE) on low cost glass substrate. The films are characterized by Elastic Recoil Detection Analysis (ERDA) and by Fourier-Transform Infrared (FTIR) spectroscopy to evaluate the hydrogen content. Analysis shows that the PECVD films contain a high hydrogen concentration (˜10 at.%) while the EBE films are almost hydrogen-free. It is found that the hydrogen is in a bonding configuration with the a-Si network and in a free form, requiring a long thermal annealing for exodiffusion before the laser treatment to avoid explosive effusion. The CW laser crystallization process of the amorphous silicon films was operated in liquid phase regime. We show by Electron Backscatter Diffraction (EBSD) that polysilicon films with large grains can be obtained with EBE as well as for the PECVD amorphous silicon provided that for the latest the hydrogen content is lower than 2 at.%.

  11. Crystallization of silicon dioxide and compositional evolution of the Earth’s core

    NASA Astrophysics Data System (ADS)

    Hirose, Kei; Morard, Guillaume; Sinmyo, Ryosuke; Umemoto, Koichio; Hernlund, John; Helffrich, George; Labrosse, Stéphane

    2017-02-01

    The Earth’s core is about ten per cent less dense than pure iron (Fe), suggesting that it contains light elements as well as iron. Modelling of core formation at high pressure (around 40–60 gigapascals) and high temperature (about 3,500 kelvin) in a deep magma ocean predicts that both silicon (Si) and oxygen (O) are among the impurities in the liquid outer core. However, only the binary systems Fe–Si and Fe–O have been studied in detail at high pressures, and little is known about the compositional evolution of the Fe–Si–O ternary alloy under core conditions. Here we performed melting experiments on liquid Fe–Si–O alloy at core pressures in a laser-heated diamond-anvil cell. Our results demonstrate that the liquidus field of silicon dioxide (SiO2) is unexpectedly wide at the iron-rich portion of the Fe–Si–O ternary, such that an initial Fe–Si–O core crystallizes SiO2 as it cools. If crystallization proceeds on top of the core, the buoyancy released should have been more than sufficient to power core convection and a dynamo, in spite of high thermal conductivity, from as early on as the Hadean eon. SiO2 saturation also sets limits on silicon and oxygen concentrations in the present-day outer core.

  12. Formation and crystallization of silicon nanoclusters in SiN{sub x}:H films using femtosecond pulsed laser annealings

    SciTech Connect

    Korchagina, T. T. Volodin, V. A.; Chichkov, B. N.

    2010-12-15

    SiN{sub x}:H films of different compositions grown on glass and silicon substrates using plasma-chemical vapor deposition at a temperature of 380 deg. C have been subjected to pulsed laser annealings. The treatments are performed using titanium-sapphire laser radiation with a wavelength of 800 nm and a pulse duration of 30 fs. Structural changes in the films are studied using Raman spectroscopy. Amorphous silicon nanoclusters are detected in as-grown films with molar fractions of excess silicon of {approx}1/5 and larger. Conditions required for pulsed crystallization of nanoclusters were determined. According to the Raman data, no silicon clusters were detected in as-grown films with a small amount of excess silicon (x > 1.25). Pulsed treatments resulted in the formation of silicon nanoclusters 1-2 nm in size in these films.

  13. Compensation mechanism in liquid encapsulated Czochralski GaAs Importance of melt stoichiometry

    NASA Technical Reports Server (NTRS)

    Holmes, D. E.; Chen, R. T.; Elliott, K. R.; Kirkpatrick, C. G.; Yu, P. W.

    1982-01-01

    It is shown that the key to reproducible growth of undoped semi-insulating GaAs by the liquid encapsulated Czochralski (LEC) technique is the control over the melt stoichiometry. Twelve crystals were grown from stoichiometric and nonstoichiometric melts. The material was characterized by secondary ion mass spectrometry, localized vibrational mode far infrared spectroscopy, Hall-effect measurements, optical absorption, and photoluminescence. A quantitative model for the compensation mechanism in the semi-insulating material was developed based on these measurements. The free carrier concentration is controlled by the balance between EL2 deep donors and carbon acceptors; furthermore, the incorporation of EL2 is controlled by the melt stoichiometry, increasing as the As atom fraction in the melt increases. As a result, semi-insulating material can be grown only from melts above a critical As composition. The practical significance of these results is discussed in terms of achieving high yield and reproducibility in the crystal growth process.

  14. Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

    NASA Technical Reports Server (NTRS)

    Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

    2007-01-01

    Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

  15. DLTS of p-type Czochralski Si wafers containing processing-induced macropores

    NASA Astrophysics Data System (ADS)

    Simoen, E.; Depauw, V.; Gordon, I.; Poortmans, J.

    2012-01-01

    The deep levels present in p-type Czochralski silicon with processing-induced macropores in the depletion region have been studied by the deep-level transient (DLT) spectroscopy technique. It is shown that a broad band is present for a bias pulse close to the interface with the Al Schottky contact, which exhibits anomalously slow hole capture and is ascribed to the internal interface states of the macropores. For depths beyond the pore region, other deep levels, associated with point defects—possibly metal contamination during the high-temperature annealing step under H2 ambient--have been observed. The impact of the observed defects on the lifetime of thin-film solar cells, fabricated using macropore-based layer transfer is discussed. Finally, it is shown that the presence of pores in the depletion region, which also affects the DLT-spectrum, alters the capacitance-voltage characteristics.

  16. Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

    NASA Astrophysics Data System (ADS)

    Wang, Chenlei

    The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

  17. Oxidation of chemically-vapor-deposited silicon nitride and single-crystal silicon

    NASA Technical Reports Server (NTRS)

    Choi, Doo J.; Fischbach, David B.; Scott, William D.

    1989-01-01

    The present 1000 C and 1300 C oxidation tests on 111-oriented single-crystal Si and dense CVD Si3N4 notes the oxidation rates of the latter in wet O2, dry O2, wet inert gas, and steam atmosphere conditions to be several orders of magnitude lower than the rates for the former in identical atmospheric conditions. Although the parabolic rate constant for Si increased linearly as the water vapor pressure increased, the parabolic rate constant for Si3N4 exhibited a nonlinear dependency on water vapor pressure in the presence of O2. NO and NH3 formation at the reaction interface of Si3N4, and the counterpermeation of these reaction products, are noted to dominate reaction kinetics.

  18. Proposal for achieving in-plane magnetic mirrors by silicon photonic crystals.

    PubMed

    Zhou, You; He, Xin-Tao; Zhao, Fu-Li; Dong, Jian-Wen

    2016-05-15

    Magnetic mirrors exhibit predominant physical characteristics such as high surface impedance and strong near-field enhancement. However, there is no way to implement these materials on a silicon lab chip. Here, we propose a scheme for an in-plane magnetic mirror in a silicon-based photonic crystal with a high-impedance surface, in contrast to the previous electric mirrors with low surface impedance. A tortuous bending waveguide with zero-index core and magnetic mirror walls is designed that exhibits high transmission and zero phase change at the waveguide exit. This type of magnetic mirror opens the door to exploring the physics of high-impedance surfaces and applications in integrated photonics.

  19. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOEpatents

    Kaschmitter, James L.; Sigmon, Thomas W.

    1995-01-01

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  20. The adhesion, friction, and wear of binary alloys in contact with single-crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    Sliding friction experiments were conducted with various iron-base alloys (alloying elements were Ti, Cr, Ni, Rh, and W) in contact with a single-crystal silicon carbide (0001) surface in vacuum. Results indicate atomic size misfit and concentration of alloying elements play a dominant role in controlling adhesion, friction, and wear properties of iron-base binary alloys. The controlling mechanism of the alloy properties is an intrinsic effect involving the resistance to shear fracture of cohesive bonding in the alloy. The coefficient of friction generally increases with an increase in solute concentration. The coefficient of friction increases as the solute-to-iron atomic radius ratio increases or decreases from unity. Alloys having higher solute concentration produce more transfer to silicon carbide than do alloys having low solute concentrations. The chemical activity of the alloying element is also an important parameter in controlling adhesion and friction of alloys.

  1. Preparation and characterization of pluronic-colloidal silicon dioxide composite particles as liquid crystal precursor.

    PubMed

    Maheshwari, Manish; Paradkar, Anant; Yamamura, Shigeo; Kadam, Shivajirao

    2006-01-01

    The purpose of this study was to produce spray-dried Pluronic-colloidal silicon dioxide (Aerosil) composite particles as a liquid crystal precursor that would form a liquid crystalline phase upon hydration. A Pluronic-colloidal silicon dioxide dispersion in isopropyl alcohol was spray-dried to obtain composite particles using different concentrations of Aerosil. Polarizing microscopy, gelation, gel melting, and rheological studies were employed to characterize the composite particles. The composite particles obtained were irregular, with concave depression. Gelation was found to decrease with the addition of Aerosil, while gel melting was found to increase with the concentration of Aerosil. Rheological studies showed an increase in elasticity as well as viscosity with an increase in the concentration of Aerosil. Composite particles showed improved gelation and rheological properties. These composite particles and the process by which they were obtained may be useful for designing various drug delivery systems.

  2. Degenerate photon-pair generation in an ultracompact silicon photonic crystal waveguide.

    PubMed

    He, Jiakun; Clark, Alex S; Collins, Matthew J; Li, Juntao; Krauss, Thomas F; Eggleton, Benjamin J; Xiong, Chunle

    2014-06-15

    We demonstrate degenerate, correlated photon-pair generation via slow-light-enhanced spontaneous four-wave mixing in a 96 μm long silicon photonic crystal waveguide. Our device represents a more than 50 times smaller footprint than silicon nanowires. We have achieved a coincidence-to-accidental ratio as high as 47 at a photon generation rate of 0.001 pairs per pulse and 14 at a photon generation rate of 0.023 pairs per pulse, which are both higher than the useful level of 10. This demonstration provides a path to generate indistinguishable photons in an ultracompact platform for future quantum photonic technologies.

  3. Slow light enhancement of nonlinear effects in silicon engineered photonic crystal waveguides.

    PubMed

    Monat, Christelle; Corcoran, Bill; Ebnali-Heidari, Majid; Grillet, Christian; Eggleton, Benjamin J; White, Thomas P; O'Faolain, Liam; Krauss, Thomas F

    2009-02-16

    We report nonlinear measurements on 80microm silicon photonic crystal waveguides that are designed to support dispersionless slow light with group velocities between c/20 and c/50. By launching picoseconds pulses into the waveguides and comparing their output spectral signatures, we show how self phase modulation induced spectral broadening is enhanced due to slow light. Comparison of the measurements and numerical simulations of the pulse propagation elucidates the contribution of the various effects that determine the output pulse shape and the waveguide transfer function. In particular, both experimental and simulated results highlight the significant role of two photon absorption and free carriers in the silicon waveguides and their reinforcement in the slow light regime.

  4. Low-power continuous-wave generation of visible harmonics in silicon photonic crystal nanocavities.

    PubMed

    Galli, Matteo; Gerace, Dario; Welna, Karl; Krauss, Thomas F; O'Faolain, Liam; Guizzetti, Giorgio; Andreani, Lucio Claudio

    2010-12-06

    We present the first demonstration of frequency conversion by simultaneous second- and third-harmonic generation in a silicon photonic crystal nanocavity using continuous-wave optical excitation. We observe a bright dual wavelength emission in the blue/green (450-525 nm) and red (675-790 nm) visible windows with pump powers as low as few microwatts in the telecom bands, with conversion efficiencies of ∼ 10 (-5) /W and ∼ 10/ W(2) for the second- and third-harmonic, respectively. Scaling behaviors as a function of pump power and cavity quality-factor are demonstrated for both second- and third order processes. Successful comparison of measured and calculated emission patterns indicates that third-harmonic is a bulk effect while second-harmonic is a surface-related effect at the sidewall holes boundaries. Our results are promising for obtaining practical low-power, continuous-wave and widely tunable multiple harmonic generation on a silicon chip.

  5. Absorption enhancement using photonic crystals for silicon thin film solar cells.

    PubMed

    Park, Yeonsang; Drouard, Emmanuel; El Daif, Ounsi; Letartre, Xavier; Viktorovitch, Pierre; Fave, Alain; Kaminski, Anne; Lemiti, Mustapha; Seassal, Christian

    2009-08-03

    We propose a design that increases significantly the absorption of a thin layer of absorbing material such as amorphous silicon. This is achieved by patterning a one-dimensional photonic crystal (1DPC) in this layer. Indeed, by coupling the incident light into slow Bloch modes of the 1DPC, we can control the photon lifetime and then, enhance the absorption integrated over the whole solar spectrum. Optimal parameters of the 1DPC maximize the integrated absorption in the wavelength range of interest, up to 45% in both S and P polarization states instead of 33% for the unpatterned, 100 nm thick amorphous silicon layer. Moreover, the absorption is tolerant with respect to fabrication errors, and remains relatively stable if the angle of incidence is changed.

  6. Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jung, Jae-Soo; Lee, Sang-Hoon; Kim, Da-Seul; Kim, Kun-Su; Park, Soon-Won; Hwang, Nong-Moon

    2017-01-01

    The deposition behavior of silicon films by hot wire chemical vapor deposition (HWCVD) was approached by non-classical crystallization, where the building block of deposition is a nanoparticle generated in the gas phase of the reactor. The puzzling phenomenon of the formation of an amorphous incubation layer on glass could be explained by the liquid-like property of small charged nanoparticles (CNPs), which are generated in the initial stage of the HWCVD process. Using the liquid-like property of small CNPs, homo-epitaxial growth as thick as 150 nm could be successfully grown on a silicon wafer at 600 °C under the processing condition where CNPs as small as possible could be supplied steadily by a cyclic process which periodically resets the process. The size of CNPs turned out to be an important parameter in the microstructure evolution of thin films.

  7. High-Q silicon photonic crystal cavity for enhanced optical nonlinearities

    SciTech Connect

    Dharanipathy, Ulagalandha Perumal; Tonin, Mario; Houdré, Romuald; Minkov, Momchil Savona, Vincenzo

    2014-09-08

    We fabricate and experimentally characterize an H0 photonic crystal slab nanocavity with a design optimized for maximal quality factor, Q = 1.7 × 10{sup 6}. The cavity, fabricated from a silicon slab, has a resonant mode at λ = 1.59 μm and a measured Q-factor of 400 000. It displays nonlinear effects, including high-contrast optical bistability, at a threshold power among the lowest ever reported for a silicon device. With a theoretical modal volume as small as V = 0.34(λ/n){sup 3}, this cavity ranks among those with the highest Q/V ratios ever demonstrated, while having a small footprint suited for integration in photonic circuits.

  8. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOEpatents

    Kaschmitter, J.L.; Sigmon, T.W.

    1995-10-10

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  9. Microdistribution of oxygen in silicon and its effects on electronic properties

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Mao, B. Y.; Nauka, K.; Lagowski, J.

    1982-01-01

    The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations.

  10. Modeling the deflection of relativistic electrons in a bent silicon crystal

    NASA Astrophysics Data System (ADS)

    Koshcheev, V. P.; Shtanov, Yu. N.; Morgun, D. A.; Panina, T. A.

    2015-10-01

    The deflection of electrons with energies 855 MeV and 6.3 GeV in planar (111) channels of a bent silicon crystal has been numerically simulated using a TROPICS computer code with atomic diffusion coefficient constructed in the Doyle-Turner approximation of the isolated atom potential. It is established that the atomic diffusion coefficient tends to a minimum value in the region of maximum nuclear density of atomic chain, where the Kitagawa-Ohtsuki diffusion coefficient reaches a maximum value.

  11. Observation of transparency of Erbium-doped silicon nitride in photonic crystal nanobeam cavities.

    PubMed

    Gong, Yiyang; Makarova, Maria; Yerci, Selcuk; Li, Rui; Stevens, Martin J; Baek, Burm; Nam, Sae Woo; Dal Negro, Luca; Vuckovic, Jelena

    2010-06-21

    One dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 microm is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.

  12. Second-harmonic generation in a silicon-carbide-based photonic crystal nanocavity.

    PubMed

    Yamada, Shota; Song, Bong-Shik; Jeon, Seungwoo; Upham, Jeremy; Tanaka, Yoshinori; Asano, Takashi; Noda, Susumu

    2014-04-01

    We demonstrate second-harmonic generation (SHG) in a silicon-carbide (SiC)-based heterostructure photonic crystal nanocavity by using a pulsed laser. We observe SHG light radiated from the SiC nanocavity and estimate the conversion efficiency in the cavity to be 2.59×10(-5) (=0.15  W(-1)) at an average input power of 0.17 mW. The near-field patterns and polarization characteristics of the SHG light are investigated experimentally and theoretically, and the results are in qualitatively good agreement.

  13. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

    NASA Astrophysics Data System (ADS)

    Roland, I.; Zeng, Y.; Han, Z.; Checoury, X.; Blin, C.; El Kurdi, M.; Ghrib, A.; Sauvage, S.; Gayral, B.; Brimont, C.; Guillet, T.; Semond, F.; Boucaud, P.

    2014-07-01

    We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ˜7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

  14. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

    SciTech Connect

    Roland, I.; Zeng, Y.; Han, Z.; Checoury, X.; Blin, C.; El Kurdi, M.; Ghrib, A.; Sauvage, S.; Boucaud, P.; Gayral, B.; Brimont, C.; Guillet, T.; Semond, F.

    2014-07-07

    We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

  15. Optical properties of organic-silicon photonic crystal nanoslot cavity light source

    NASA Astrophysics Data System (ADS)

    Yang, Ming-Jay; Lin, Chun-Chi; Wu, Yu-Shu; Wang, Likarn; Na, Neil

    2017-03-01

    We theoretically study a dielectric photonic crystal nanoslot cavity immersed in an organic fluid containing near-infrared dyes by means of a full rate equation model including the complete cavity QED effects. Based on the modeling results, we numerically design an organic-silicon cavity light source in which its mode volume, quality factor, and far-field emission pattern are optimized for energy-efficient, high-speed applications. Dye quantum efficiency improved by two orders of magnitude and 3dB modulation bandwidth of a few hundred GHz can be obtained.

  16. Slow-light enhanced correlated photon pair generation in a silicon photonic crystal waveguide.

    PubMed

    Xiong, C; Monat, Christelle; Clark, Alex S; Grillet, Christian; Marshall, Graham D; Steel, M J; Li, Juntao; O'Faolain, Liam; Krauss, Thomas F; Rarity, John G; Eggleton, Benjamin J

    2011-09-01

    We report the generation of correlated photon pairs in the telecom C-band at room temperature from a dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow-light propagation enabling an active device length of less than 100 μm. With a coincidence to accidental ratio of 12.8 at a pair generation rate of 0.006 per pulse, this ultracompact photon pair source paves the way toward scalable quantum information processing realized on-chip.

  17. Silicon-based mesoporous photonic crystals: towards single cell optical biosensors

    NASA Astrophysics Data System (ADS)

    Kilian, Kristopher A.; Magenau, Astrid; Böcking, Till; Gaus, Katharina; Gal, Michael; Gooding, J. Justin

    2009-08-01

    Mesoporous silicon (PSi) photonic crystals have attracted interest as biosensing transducers owing to their high quality optics and sensitivity in optical characteristics to changes in refractive index. We describe progress our group has made derivatizing PSi towards devices for biology and medicine. PSi rugate filters display a high reflectivity resonant line in the reflectance spectrum. As an example for biosensing, immobilization of peptides and biopolymers within the PSi is demonstrated for detecting protease enzymes. Secretion of matrix metalloproteases from live cells was detected as a blue shift in the photonic resonance within hours, demonstrating the promise of this biosensor.

  18. Kinetics of the laser-induced solid phase crystallization of amorphous silicon-Time-resolved Raman spectroscopy and computer simulations

    NASA Astrophysics Data System (ADS)

    Očenášek, J.; Novák, P.; Prušáková, L.

    2017-01-01

    This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated.

  19. The effect of hydrogen in the mechanism of aluminum-induced crystallization of sputtered amorphous silicon using scanning auger microanalysis

    SciTech Connect

    Hossain, Maruf; Meyer III, Harry M; Abu-Safe, Husam H; Naseem, Hameed; Brown, Walter D

    2006-01-01

    The metal-induced crystallization (MIC) of hydrogenated sputtered amorphous silicon (a-Si:H) using aluminum has been investigated using Xray diffraction (XRD) and scanning Auger microanalysis (SAM). Hydrogenated, as well as non-hydrogenated, amorphous silicon (a-Si) films were sputtered on glass substrates, then capped with a thin layer of Al. Following the depositions, the samples were annealed in the temperature range 200 C to 400 C for varying periods of time. Crystallization of the samples was confirmed by XRD. Non-hydrogenated films started to crystallize at 350 C. On the other hand, crystallization of the samples with the highest hydrogen (H2) content initiated at 225 C. Thus, the crystallization temperature is affected by the H2 content of the a-Si. Material structure following annealing was confirmed by SAM. In this paper, a comprehensive model for MIC of a-Si is developed based on these experimental results.

  20. Mathematical modelling of the feed rod shape in floating zone silicon crystal growth

    NASA Astrophysics Data System (ADS)

    Plāte, M.; Krauze, A.; Virbulis, J.

    2017-01-01

    A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution of the asymmetric feed rod shape. The feed rod rotation is shown to have a smoothing effect on the shape of the open melting front.

  1. High-sensitivity double-cavity silicon photonic-crystal resonator for label-free biosensing

    NASA Astrophysics Data System (ADS)

    Sana, Amrita Kumar; Amemiya, Yoshiteru; Yokoyama, Shin

    2017-04-01

    We demonstrated a two-dimensional double-cavity silicon photonic-crystal resonator based neighboring hole radius modulation. By theoretical and experimental analyses, we confirmed that the quality factor (Q-factor) increases at a certain neighboring hole radius. Experimentally, we showed Q-factors of (1.93–2.02) × 105. Moreover, by using sucrose solution, we measured a sensitivity of 1571 nm/RIU (refractive index unit), which is the highest sensitivity ever reported for such a two-dimensional photonic-crystal-based resonator type device. We reported the detection limit (DL) of the refractive index change of (4.15–4.34) × 10‑6 RIU, which is one of the best in previous reports.

  2. Limitation of Liquid Crystal on Silicon Spatial Light Modular for Holographic Three-dimensional Displays

    NASA Technical Reports Server (NTRS)

    Wang, Xinghua; Wang, Bin; Bos, Philip J.; Anderson, James E.; Kujawinska, Malgorzata; Pouch, John; Miranda, Feliz

    2004-01-01

    In a 3-D display system based on an opto-electronic reconstruction of a digitally recorded hologram, the field of view of such a system is limited by the spatial resolution of the liquid crystal on silicon (LCOS) spatial light modular (SLM) used to perform the opto-electronic reconstruction. In this article, the special resolution limitation of LCOS SLM associated with the fringe field effect and interpixel coupling is determined by the liquid crystal detector simulation and the Finite Difference Time Domain (FDTD) simulation. The diffraction efficiency loss associated with the imperfection in the phase profile is studied with an example of opto-electronic reconstruction of an amplitude object. A high spatial resolution LCOS SLM with a wide reconstruction angle is proposed.

  3. Large optical spectral range dispersion engineered silicon-based photonic crystal waveguide modulator.

    PubMed

    Hosseini, Amir; Xu, Xiaochuan; Subbaraman, Harish; Lin, Che-Yun; Rahimi, Somayeh; Chen, Ray T

    2012-05-21

    We present a dispersion engineered slow light silicon-based photonic crystal waveguide PIN modulator. Low-dispersion slow light transmission over 18 nm bandwidth under the silica light line with a group index of 26.5 is experimentally confirmed. We investigate the variations of the modulator figure of merit, V(π) × L, as a function of the optical carrier wavelength over the bandwidth of the fundamental photonic crystal waveguide defect mode. A large signal operation with a record low maximum V(π )× L of 0.0464 V · mm over the low-dispersion optical spectral range is demonstrated. We also report the device operation at 2 GHz.

  4. Crystallization of amorphous silicon by self-propagation of nanoengineered thermites

    NASA Astrophysics Data System (ADS)

    Hossain, Maruf; Subramanian, Senthil; Bhattacharya, Shantanu; Gao, Yuanfang; Apperson, Steve; Shende, Rajesh; Guha, Suchi; Arif, Mohammad; Bai, Mengjun; Gangopadhyay, Keshab; Gangopadhyay, Shubhra

    2007-03-01

    Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250°C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO /Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si.

  5. Floating Silicon Method single crystal ribbon - observations and proposed limit cycle theory

    NASA Astrophysics Data System (ADS)

    Kellerman, Peter; Kernan, Brian; Helenbrook, Brian T.; Sun, Dawei; Sinclair, Frank; Carlson, Frederick

    2016-10-01

    In the Floating Silicon Method (FSM), a single-crystal Si ribbon is grown while floating on the surface of a Si melt. In this paper, we describe the phenomenology of FSM, including the observation of approximately regularly spaced "facet lines" on the ribbon surface whose orientation aligns with (111) crystal planes. Sb demarcation experiments sectioned through the thickness of the ribbon reveal that the solid/melt interface consists of dual (111) planes and that the leading edge facet growth is saccadic in nature, rather than steady-state. To explain this behavior, we propose a heuristic solidification limit cycle theory, using a continuum level of description with anisotropic kinetics as developed by others, and generalizing the interface kinetics to include a roughening transition as well as a re-faceting mechanism that involves curvature and the Gibbs-Thomson effect.

  6. 10 Gb/s operation of photonic crystal silicon optical modulators.

    PubMed

    Nguyen, Hong C; Sakai, Yuya; Shinkawa, Mizuki; Ishikura, Norihiro; Baba, Toshihiko

    2011-07-04

    We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L < 0.056 V∙cm. Optical modulation is demonstrated by electrically driving the device with a 2(31) - 1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

  7. Density-wave-modulated crystallization in nanoscale silicon films and droplets

    NASA Astrophysics Data System (ADS)

    Lü, Yongjun; Bi, Qingling; Yan, Xinqing

    2016-06-01

    Free surfaces have been known to significantly influence the crystallization of tetrahedral liquids. However, a comprehensive understanding of the influence mechanism is still lacking at present. By employing molecular dynamics simulations, we find that the nucleation probability in nanoscale silicon films and droplets exhibits a ripple-like distribution spatially. This phenomenon is closely related to the structural order wave, which is induced by the density fluctuations arisen from the volume expansion in a confinement environment defined by free surfaces. By the aid of the intrinsic relation between the tetrahedral order and the density, the analytic results based on the density wave equation well account for the nucleation probability distributions in both films and droplets. Our findings reveal the underlying mechanism of the surface-assisted nucleation in tetrahedral liquids and provide an overall description of crystallization in liquid films and droplets.

  8. Post-process wavelength tuning of silicon photonic crystal slow-light waveguides.

    PubMed

    Awan, Kashif M; Schulz, Sebastian A; Liu, Dennis X; Dolgaleva, Ksenia; Upham, Jeremy; Boyd, Robert W

    2015-05-01

    Silicon photonic crystal waveguides have enabled a range of technologies, yet their fabrication continues to present challenges. Here, we report on a post-processing method that allows us to tune the operational wavelength of slow-light photonic crystal waveguides in concert with optical characterization, offsetting the effects of hole-radii and slab thickness variations. Our method consist of wet chemical surface oxidation, followed by oxide stripping. Theoretical modelling shows that the changes in optical behavior were predictable, and hence controlled tuning can be achieved by changing the number of processing cycles, where each cycle removes approximately 0.25 nm from all exposed surfaces, producing a blueshift of 1.6±0.1  nm in operating wavelength.

  9. Optical pendulum effect in one-dimensional diffraction-thick porous silicon based photonic crystals

    SciTech Connect

    Novikov, V. B. Svyakhovskiy, S. E.; Maydykovskiy, A. I.; Murzina, T. V.; Mantsyzov, B. I.

    2015-11-21

    We present the realization of the multiperiodic optical pendulum effect in 1D porous silicon photonic crystals (PhCs) under dynamical Bragg diffraction in the Laue scheme. The diffraction-thick PhC contained 360 spatial periods with a large variation of the refractive index of adjacent layers of 0.4. The experiments reveal switching of the light leaving the PhC between the two spatial directions, which correspond to Laue diffraction maxima, as the fundamental wavelength or polarization of the incident light is varied. A similar effect can be achieved when the temperature of the sample or the intensity of the additional laser beam illuminating the crystal are changed. We show that in our PhC structures, the spectral period of the pendulum effect is down to 5 nm, while the thermal period is about 10 °C.

  10. Mid-infrared silicon-on-sapphire waveguide coupled photonic crystal microcavities

    SciTech Connect

    Zou, Yi E-mail: swapnajit.chakravarty@omegaoptics.com Chen, Ray T. E-mail: swapnajit.chakravarty@omegaoptics.com; Chakravarty, Swapnajit E-mail: swapnajit.chakravarty@omegaoptics.com

    2015-08-24

    We experimentally demonstrate a photonic crystal (PC) microcavity side coupled to a W1.05 photonic crystal waveguide fabricated in silicon-on-sapphire working in mid-IR regime at 3.43 μm. Using a fixed wavelength laser source, propagation characteristics of PC waveguides without microcavity are characterized as a function of lattice constant to determine the light line position, stop gap, and guided mode transmission behavior. The resonance of an L21 PC microcavity coupled to the W1.05 PCW in the guided mode transmission region is then measured by thermal tuning of the cavity resonance across the source wavelength. Resonance quality factor ∼3500 is measured from the temperature dependency curve.

  11. Channeling, volume reflection and gamma emission using 14GeV electrons in bent silicon crystals - Oral presentation

    SciTech Connect

    Benson, Brandon

    2015-08-23

    High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact when compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.

  12. Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active and greater resistance to shear the metal has, with the exception of rhodium and tungsten, the less transfer to silicon carbide.

  13. Single-crystal cubic silicon carbide: an in vivo biocompatible semiconductor for brain machine interface devices.

    PubMed

    Frewin, Christopher L; Locke, Christopher; Saddow, Stephen E; Weeber, Edwin J

    2011-01-01

    Single crystal silicon carbide (SiC) is a wide band-gap semiconductor which has shown both bio- and hemo-compatibility [1-5]. Although single crystalline SiC has appealing bio-sensing potential, the material has not been extensively characterized. Cubic silicon carbide (3C-SiC) has superior in vitro biocompatibility compared to its hexagonal counterparts [3, 5]. Brain machine interface (BMI) systems using implantable neuronal prosthetics offer the possibility of bi-directional signaling, which allow sensory feedback and closed loop control. Existing implantable neural interfaces have limited long-term reliability, and 3C-SiC may be a material that may improve that reliability. In the present study, we investigated in vivo 3C-SiC biocompatibility in the CNS of C56BL/6 mice. 3C-SiC was compared against the known immunoreactive response of silicon (Si) at 5, 10, and 35 days. The material was examined to detect CD45, a protein tyrosine phosphatase (PTP) expressed by activated microglia and macrophages. The 3C-SiC surface revealed limited immunoresponse and significantly reduced microglia compared to Si substrate.

  14. In situ observation of shear-driven amorphization in silicon crystals

    SciTech Connect

    He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

    2016-09-19

    Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

  15. One-dimensional photonic crystal slot waveguide for silicon-organic hybrid electro-optic modulators.

    PubMed

    Yan, Hai; Xu, Xiaochuan; Chung, Chi-Jui; Subbaraman, Harish; Pan, Zeyu; Chakravarty, Swapnajit; Chen, Ray T

    2016-12-01

    In an on-chip silicon-organic hybrid electro-optic (EO) modulator, the mode overlap with EO materials, in-device effective r33, and propagation loss are among the most critical factors that determine the performance of the modulator. Various waveguide structures have been proposed to optimize these factors, yet there is a lack of comprehensive consideration on all of them. In this Letter, a one-dimensional (1D) photonic crystal (PC) slot waveguide structure is proposed that takes all these factors into consideration. The proposed structure takes advantage of the strong mode confinement within a low-index region in a conventional slot waveguide and the slow-light enhancement from the 1D PC structure. Its simple geometry makes it robust to resist fabrication imperfections and helps reduce the propagation loss. Using it as a phase shifter in a Mach-Zehnder interferometer structure, an integrated silicon-organic hybrid EO modulator was experimentally demonstrated. The observed effective EO coefficient is as high as 490 pm/V. The measured half-wave voltage and length product is less than 1  V·cm and can be further improved. A potential bandwidth of 61 GHz can be achieved and further improved by tailoring the doping profile. The proposed structure offers a competitive novel phase-shifter design, which is simple, highly efficient, and with low optical loss, for on-chip silicon-organic hybrid EO modulators.

  16. Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule

    SciTech Connect

    Emanuel Sachs Tonio Buonassisi

    2013-01-16

    The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the

  17. Fabrication of single crystal silicon mirror substrates for X-ray astronomical missions

    NASA Astrophysics Data System (ADS)

    Riveros, Raul E.; Bly, Vincent T.; Kolos, Linette D.; McKeon, Kevin P.; Mazzarella, James R.; Miller, Timothy M.; Zhang, William W.

    2014-07-01

    The advancement of X-ray astronomy largely depends on technological advances in the manufacturing of X-ray optics. Future X-ray astronomy missions will require thousands of nearly perfect mirror segments to produce an X-ray optical assembly with < 5 arcsecond resolving capability. Present-day optical manufacturing technologies are not capable of producing thousands of such mirrors within typical mission time and budget allotments. Therefore, efforts towards the establishment of a process capable of producing sufficiently precise X-ray mirrors in a time-efficient and cost-effective manner are needed. Single-crystal silicon is preferred as a mirror substrate material over glass since it is stronger and free of internal stress, allowing it to retain its precision when cut into very thin mirror substrates. This paper details our early pursuits of suitable fabrication technologies for the mass production of sub-arcsecond angular resolution single-crystal silicon mirror substrates for X-ray telescopes.

  18. Precision Control of Thermal Transport in Cryogenic Single-Crystal Silicon Devices

    NASA Technical Reports Server (NTRS)

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-01-01

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than, even when the surface is fairly smooth, 510 nm rms, and the peak thermal wavelength is 0.6 microns. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of +/-8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  19. Precision control of thermal transport in cryogenic single-crystal silicon devices

    SciTech Connect

    Rostem, K.; Chuss, D. T.; Colazo, F. A.; Crowe, E. J.; Denis, K. L.; Lourie, N. P.; Moseley, S. H.; Stevenson, T. R.; Wollack, E. J.

    2014-03-28

    We report on the diffusive-ballistic thermal conductance of multi-moded single-crystal silicon beams measured below 1 K. It is shown that the phonon mean-free-path ℓ is a strong function of the surface roughness characteristics of the beams. This effect is enhanced in diffuse beams with lengths much larger than ℓ, even when the surface is fairly smooth, 5–10 nm rms, and the peak thermal wavelength is 0.6 μm. Resonant phonon scattering has been observed in beams with a pitted surface morphology and characteristic pit depth of 30 nm. Hence, if the surface roughness is not adequately controlled, the thermal conductance can vary significantly for diffuse beams fabricated across a wafer. In contrast, when the beam length is of order ℓ, the conductance is dominated by ballistic transport and is effectively set by the beam cross-sectional area. We have demonstrated a uniformity of ±8% in fractional deviation for ballistic beams, and this deviation is largely set by the thermal conductance of diffuse beams that support the micro-electro-mechanical device and electrical leads. In addition, we have found no evidence for excess specific heat in single-crystal silicon membranes. This allows for the precise control of the device heat capacity with normal metal films. We discuss the results in the context of the design and fabrication of large-format arrays of far-infrared and millimeter wavelength cryogenic detectors.

  20. Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity.

    PubMed

    Tanabe, Takasumi; Nishiguchi, Katsuhiko; Kuramochi, Eiichi; Notomi, Masaya

    2009-12-07

    We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (microW level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

  1. A candidate low-cost processing sequence for terrestrial silicon solar cell panel

    NASA Technical Reports Server (NTRS)

    Bickler, D. B.; Gallagher, B. D.; Sanchez, L. E.

    1978-01-01

    Manufacturing sequence for silicon solar cells using Czochralsky crystal growing techniques in order to produce at a rate of 20 MW per year on a 24-hour per day basis is discussed. Cost analysis of the manufacturing is presented and consideration is given to the following processing decision categories of the manufacturing of an unencapsulated solar cell from a silicon wafer: (1) treatment of the optical surface; (2) formation of the junction(s); and (3) metallization of electrical collectors. The manufacturing of encapsulated solar modules from solar cells, using two glass plates, a low iron front surface, and a standard float glass back plate, is described. Totaling the three major activities of wafer making, cell manufacturing, and module fabrication, the resulting contribution to module price will be 1.945 $/watt.

  2. Polycrystalline Silicon Sheets for Solar Cells by the Improved Spinning Method

    NASA Technical Reports Server (NTRS)

    Maeda, Y.; Yokoyama, T.; Hide, I.

    1984-01-01

    Cost reduction of silicon materials in the photovoltaic program of materials was examined. The current process of producing silicon sheets is based entirely on the conventional Czochralski ingot growth and wafering used in the semiconductor industry. The current technology cannot meet the cost reduction demands for producing low cost silicon sheets. Alternative sheet production processes such as unconventional crystallization are needed. The production of polycrystalline silicon sheets by unconventional ingot technology is the casting technique. Though large grain sheets were obtained by this technique, silicon ribbon growth overcomes deficiencies of the casting process by obtaining the sheet directly from the melt. The need to solve difficulties of growth stability and impurity effects are examined. The direct formation process of polycrystalline silicon sheets with large grain size, smooth surface, and sharp edges from the melt with a high growth rate which will yield low cost silicon sheets for solar cells and the photovoltaic characteristics associated with this type of sheet to include an EBIC study of the grain boundaries are described.

  3. Materials requirements for high-efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wolf, M.

    1985-01-01

    To achieve higher Si solar cell efficiencies (greater than 20%), better single-crystal Si must be produced. It is believed possible to bring Cz (Czochralski) Si up to the same low recombination level as FZ (Float Zone) Si. It is also desirable that solar cell Si meet the following requirements: long minority carrier lifetime (0.2 ohm-cm p-type with tau less than 500 microsec); repeatedly uniform lifetime (not spread from 50 to 1000 microsec); a lifetime that does not decrease during normal device processing; a silicon wafer sheet that is flat and stays throughout normal device processing; uniform and reasonable mechanical strength; and, manufacture at low cost (less than $50/sq m).

  4. Cavity-enhanced optical trapping of bacteria using a silicon photonic crystal.

    PubMed

    van Leest, Thijs; Caro, Jacob

    2013-11-21

    On-chip optical trapping and manipulation of cells based on the evanescent field of photonic structures is emerging as a promising technique, both in research and for applications in broader context. Relying on mass fabrication techniques, the involved integration of photonics and microfluidics allows control of both the flow of light and water on the scale of interest in single cell microbiology. In this paper, we demonstrate for the first time optical trapping of single bacteria (B. subtilis and E. coli) using photonic crystal cavities for local enhancement of the evanescent field, as opposed to the synthetic particles used so far. Three types of cavities (H0, H1 and L3) are studied, embedded in a planar photonic crystal and optimized for coupling to two collinear photonic crystal waveguides. The photonic crystals are fabricated on a silicon-on-insulator chip, onto which a fluidic channel is created as well. For each of the cavities, when pumped at the resonance wavelength (around 1550 nm), we clearly demonstrate optical trapping of bacteria, in spite of their low index contrast w.r.t. water. By tracking the confined Brownian motion of B. subtilis spores in the traps using recorded microscope observations, we derive strong in-plane trap stiffnesses of about 7.6 pN nm(-1) W(-1). The values found agree very well with calculations based on the Maxwell stress tensor for the force and finite-difference time-domain simulations of the fields for the fabricated cavity geometries. We envision that our lab-on-a-chip with photonic crystal traps opens up new application directions, e.g. immobilization of single bio-objects such as mammalian cells and bacteria under controlled conditions for optical microscopy studies.

  5. Performance study of Philips digital silicon photomultiplier coupled to scintillating crystals

    NASA Astrophysics Data System (ADS)

    Liu, Z.; Pizzichemi, M.; Auffray, E.; Lecoq, P.; Paganoni, M.

    2016-01-01

    Silicon photomultipliers (SiPMs) and scintillators are often arranged in the shape of arrays in Positron Emission Tomography (PET) systems. Digital SiPMs provide signal readout in single photon avalanche diode (SPAD) level. From the photon count rate measurement of each SPAD cell of digital SiPM, we found that the output scintillating photons distribute in an area larger than the scintillator physical coupling area. Taking advantage of the possibility to enable/disable individual cells of the digital SiPM, a group of Lutetium-yttrium oxyorthosilicate (LYSO) crystals with different dimensions coupled to a digital SiPM was used to study the influence of using different SiPM active area on the number of photons detected, energy resolution and coincidence time resolution (CTR). For the same crystal coupled to the digital SiPM, the larger the active area of digital SiPM, the higher the number of photons detected. The larger active area of the digital SiPM also results in a better energy resolution after saturation correction. The best energy resolution full width half maximum (FWHM) obtained for the 2 × 2 × 5 mm3, 2 × 2 × 10 mm3, 2 × 2 × 15 mm3, 2 × 2 × 20 mm3 LYSO crystals was 10.7%, 11.6%, 12.1%, 12.5%, respectively. For crystals with different cross sections coupled to the digital SiPM, we found that the larger the cross section of coupling area, the more photons were detected and thus a better energy resolution was obtained. The CTR of crystals fully wrapped with Teflon or without wrapping was measured by positioning two identical crystals facing each other. A larger area of digital SiPM improves the CTR and the CTR reaches the plateau when the active area is larger than 2.2 × 2.2 mm2 with both two configurations of wrapping. The best CTR value for the 2 × 2 × 5 mm3, 2 × 2 × 10 mm3, 2 × 2 × 15 mm3, 2 × 2 × 20 mm3 LYSO crystals was 128.9 ps, 148.4 ps, 171.6 ps, 177.9 ps, respectively. The measurements performed lead us to conclude that optimising the

  6. A review of high-efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.

    1986-01-01

    Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

  7. Constitutive Description of Large Elastic Deformations in Diamond and Silicon Crystals from First-Principles

    NASA Astrophysics Data System (ADS)

    Salvetti, M.; Duchenne, S.; Parks, D. M.; Marzari, N.

    2010-03-01

    Within a continuum approach, the prediction of the mechanical response of single crystals at large elastic deformations relies on the accurate description of the strain energy density function ψ. The coupling of hydrostatic and deviatoric terms at high compressions is of particular interest for applications, and the effect is generally not taken into account by current models available in the literature [1,2]. We present a general approach that leads to the construction of strain energy density functions of cubic single crystals based on data obtained from density functional theory (DFT) calculations. We connect the deformation-induced energy changes and Cauchy stress calculated from DFT calculations to the Lagrangian description frequently adopted within the continuum theory of hyperelasticity [3]. In particular, we adopt a coordinate--free invariant formulation [4] that intrinsically preserves the properties of the cubic symmetry group. We present results on diamond and silicon single crystals, and highlight both similarities and striking differences. [1] R.G.Veprek et. al, Mater. Sci. Eng. A 4248, 366-378 (2007) [2] B.P Gearing, L. Anand, Int. J. Solids Struct. 41, 827-845 (2004) [3] A.N. Norris, J. Mech. Mater. Struct. 3, No.2, 243-260 (2008) [4] J.P. Boehler, Z. Angew. Math. Mech. 59, 157-167 (1979)

  8. A quality comparison of protein crystals grown under containerless conditions generated by diamagnetic levitation, silicone oil and agarose gel.

    PubMed

    Cao, Hui-Ling; Sun, Li-Hua; Li, Jian; Tang, Lin; Lu, Hui-Meng; Guo, Yun-Zhu; He, Jin; Liu, Yong-Ming; Xie, Xu-Zhuo; Shen, He-Fang; Zhang, Chen-Yan; Guo, Wei-Hong; Huang, Lin-Jun; Shang, Peng; He, Jian-Hua; Yin, Da-Chuan

    2013-10-01

    High-quality crystals are key to obtaining accurate three-dimensional structures of proteins using X-ray diffraction techniques. However, obtaining such protein crystals is often a challenge. Several containerless crystallization techniques have been reported to have the ability to improve crystal quality, but it is unknown which is the most favourable way to grow high-quality protein crystals. In this paper, a quality comparison of protein crystals which were grown under three containerless conditions provided by diamagnetic levitation, silicone oil and agarose gel was conducted. A control experiment on a vessel wall was also simultaneously carried out. Seven different proteins were crystallized under the four conditions, and the crystal quality was assessed in terms of the resolution limit, the mosaicity and the Rmerge. It was found that the crystals grown under the three containerless conditions demonstrated better morphology than those of the control. X-ray diffraction data indicated that the quality of the crystals grown under the three containerless conditions was better than that of the control. Of the three containerless crystallization techniques, the diamagnetic levitation technique exhibited the best performance in enhancing crystal quality. This paper is to our knowledge the first report of improvement of crystal quality using a diamagnetic levitation technique. Crystals obtained from agarose gel demonstrated the second best improvement in crystal quality. The study indicated that the diamagnetic levitation technique is indeed a favourable method for growing high-quality protein crystals, and its utilization is thus potentially useful in practical efforts to obtain well diffracting protein crystals.

  9. Light-trapping optimization in wet-etched silicon photonic crystal solar cells

    SciTech Connect

    Eyderman, Sergey; John, Sajeev; Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y.; Bouwes, D. M.

    2015-07-14

    We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

  10. Nonstationary local reorientation of a nematic liquid crystal in a cell with a silicon p- n junction

    NASA Astrophysics Data System (ADS)

    Goncharov, Yu. I.; Kolesnikov, D. A.; Kucheev, S. I.

    2014-09-01

    We report the first observation of the phenomenon of nonstationary local reorientation of a nematic liquid crystal (NLC), which is initiated by a reverse biased p- n junction in a cell with silicon substrate. The velocity of reorientation and the distance traveled by a reoriented nematic band (which is tenfold greater than the cell thickness) are determined by the p- n junction bias voltage. The band profile depends on the distribution of the surface conductivity, which has been set in this work either by irradiation with 30-keV Ga ions or by light-induced generation of nonequilibriun carriers in silicon. The local reorientation of NLC and the depletion of the silicon surface are explained by the influence of ion space charge in the liquid crystal.

  11. Control of crystalline volume and nano crystal grain size in nanocrystalline silicon thin film deposited by PECVD

    NASA Astrophysics Data System (ADS)

    Bui, Thanh Tung; Chien Dang, Mau

    2014-11-01

    Application of the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique was studied to fabricate amorphous and nanocrystalline silicon (a-Si and nc-Si) thin films for photovoltaic devices at substrate temperature of 200 °C. Amorphous-crystalline transition of silicon thin films in working conditions of PECVD system was shown as a function of deposition parameters, i.e., dilution ratio of silane (SiH4) in hydrogen, total gas pressure during deposition and RF excitation power density. The crystalline volume as well as grain size of nanocrystalline silicon films could be successfully controlled by tuning those deposition parameters. Micro Raman scattering spectroscopy and spectroscopic ellipsometry (SE) methods were used to characterize the structure and crystallization of the deposited silicon thin films. We could make nc-Si thin films with various crystalline volumes. Nc-Si grain size was also controlled and was in the range of 3-5 nm.

  12. A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

    NASA Astrophysics Data System (ADS)

    Ha, Thi Dep; Bao, JingFu

    2016-04-01

    Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young's modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

  13. Properties of localization in silicon-based lattice periodicity breaking photonic crystal waveguides

    SciTech Connect

    Wu, Yuquan; Wang, Xiaofei; Wang, Yufang; Zhang, Guoquan; Fan, Wande; Cao, Xuewei; Wu, Yuanbin

    2013-11-15

    The light localization effects in silicon photonic crystal cavities at different disorder degrees have been studied using the finite difference time domain (FDTD) method in this paper. Numerical results showed that localization occurs and enhancement can be gained in the region of the cavity under certain conditions. The stabilities of the localization effects due to the structural perturbations have been investigated too. Detailed studies showed that when the degree of structural disorder is small(about 10%), the localization effects are stable, the maximum enhancement factor can reach 16.5 for incident wavelength of 785 nm and 23 for 850 nm in the cavity, with the degree of disorder about 8%. The equivalent diameter of the localized spot is almost constant at different disorder degrees, approximating to λ/7, which turned out to be independent on the structural perturbation.

  14. Slow light miniature devices with ultra-flattened dispersion in silicon-on-insulator photonic crystal.

    PubMed

    Rawal, Swati; Sinha, Ravindra; De La Rue, Richard M

    2009-08-03

    We propose a silicon-on-insulator (SOI) photonic crystal waveguide within a hexagonal lattice of elliptical air holes for slow light propagation with group velocity in the range 0.0028c to 0.044c and ultra-flattened group velocity dispersion (GVD). The proposed structure is also investigated for its application as an optical buffer with a large value of normalized delay bandwidth product (DBP), equal to 0.778. Furthermore it is shown that the proposed structure can also be used for time or wavelength-division demultiplexing to separate two telecom wavelengths, 1.31 microm and 1.55 microm, on a useful time-scale and with minimal distortion.

  15. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    NASA Astrophysics Data System (ADS)

    Yan, Hai; Zou, Yi; Chakravarty, Swapnajit; Yang, Chun-Ju; Wang, Zheng; Tang, Naimei; Fan, Donglei; Chen, Ray T.

    2015-03-01

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

  16. Optoelectronic optimization of mode selective converter based on liquid crystal on silicon

    NASA Astrophysics Data System (ADS)

    Wang, Yongjiao; Liang, Lei; Yu, Dawei; Fu, Songnian

    2016-03-01

    We carry out comprehensive optoelectronic optimization of mode selective converter used for the mode division multiplexing, based on liquid crystal on silicon (LCOS) in binary mode. The conversion error of digital-to-analog (DAC) is investigated quantitatively for the purpose of driving the LCOS in the application of mode selective conversion. Results indicate the DAC must have a resolution of 8-bit, in order to achieve high mode extinction ratio (MER) of 28 dB. On the other hand, both the fast axis position error of half-wave-plate (HWP) and rotation angle error of Faraday rotator (FR) have negative influence on the performance of mode selective conversion. However, the commercial products provide enough angle error tolerance for the LCOS-based mode selective converter, taking both of insertion loss (IL) and MER into account.

  17. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    SciTech Connect

    Yan, Hai Zou, Yi; Yang, Chun-Ju; Chakravarty, Swapnajit; Wang, Zheng; Tang, Naimei; Chen, Ray T.; Fan, Donglei

    2015-03-23

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

  18. Sensitive temperature measurements based on Lorentzian and Fano resonance lineshapes of a silicon photonic crystal cavity

    NASA Astrophysics Data System (ADS)

    Zhao, Chenyang; Fang, Liang; Yuan, Qinchen; Gan, Xuetao; Zhao, Jianlin

    2016-10-01

    We report a high-performance photonic temperature sensor by exploiting a silicon photonic crystal (PC) cavity. Since the PC cavity's spectra are very sensitive to the refractive index change, we observe remarkable variations of its resonant wavelength and output power under varying temperature levels. In a PC cavity with Lorentzian resonance lineshape, the sensor exhibits a linear spectrum-sensitivity of 70 pm/°, and the power-variation presents a high sensitivity as 1.28 dB/°. In addition, the Fano resonance lineshape generated by the PC cavity has also been employed to measure the temperature, which shows improved power sensitivity as 2.94 dB/ °. The demonstrated PC cavity-based sensor offers great potentials for low-cost, high sensitivity homogeneous sensing in chip-integrated devices.

  19. Diffraction based phase compensation method for phase-only liquid crystal on silicon devices in operation.

    PubMed

    Zhang, Zichen; Yang, Haining; Robertson, Brian; Redmond, Maura; Pivnenko, Mike; Collings, Neil; Crossland, William A; Chu, Daping

    2012-06-10

    A method to measure the optical response across the surface of a phase-only liquid crystal on silicon device using binary phase gratings is described together with a procedure to compensate its spatial optical phase variation. As a result, the residual power between zero and the minima of the first diffraction order for a binary grating can be reduced by more than 10 dB, from -15.98 dB to -26.29 dB. This phase compensation method is also shown to be useful in nonbinary cases. A reduction in the worst crosstalk by 5.32 dB can be achieved when quantized blazed gratings are used.

  20. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    SciTech Connect

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  1. Liquid crystal on silicon (LCOS) devices and their application to scene projection

    NASA Astrophysics Data System (ADS)

    Ewing, Teresa; Buck, Joseph; Serati, Steve; Linnenberger, Anna; Masterson, Hugh; Stockley, Jay

    2012-06-01

    Liquid Crystal on Silicon micro-displays are the enabling components on a variety of commercial consumer products including high-definition projection televisions, office projectors, camera view-finders, head-mounted displays and picoprojectors. The use and potential application of LCOS technology in calibrated scene projectors is just beginning to be explored. Calibrated LCOS displays and projectors have been built and demonstrated not only in the visible regime, but also in the SWIR, MWIR and LWIR. However, LCOS devices are not only capable of modulating the intensity of a broadband illumination source, but can also manipulate the polarization and/or phase of a laser source. This opens the possibility of both calibrated polarization displays and holographic projection displays.

  2. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing.

    PubMed

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  3. Schottky MSM junctions for carrier depletion in silicon photonic crystal microcavities.

    PubMed

    Haret, Laurent-Daniel; Checoury, Xavier; Bayle, Fabien; Cazier, Nicolas; Boucaud, Philippe; Combrié, Sylvain; de Rossi, Alfredo

    2013-04-22

    Collection of free carriers is a key issue in silicon photonics devices. We show that a lateral metal-semiconductor-metal Schottky junction is an efficient and simple way of dealing with that issue in a photonic crystal microcavity. Using a simple electrode design, and taking into account the optical mode profile, the resulting carrier distribution in the structure is calculated. We show that the corresponding effective free carrier lifetime can be reduced by 50 times when the bias is tuned. This allows one to maintain a high cavity quality factor under strong optical injection. In the fabricated structures, carrier depletion is correlated with transmission spectra and directly visualized by Electron Beam Induced Current pictures. These measurements demonstrate the validity of this carrier extraction principle. The design can still be optimized in order to obtain full carrier depletion at a smaller energy cost.

  4. A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator

    NASA Astrophysics Data System (ADS)

    Tang, Hai-Xia; Zuo, Yu-Hua; Yu, Jin-Zhong; Wang, Qi-Ming

    2008-01-01

    This paper reports that a two-dimensional single-defect photonic crystal waveguide in the Γ-K direction with triangular lattice on a silicon-on-insulator substrate is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. A ministop band (MSB) is observed by the measurement of transmission characteristics. It results from the coupling between the two modes with the same symmetry, which is analysed from the stimulated band diagram by the effective index and the two-dimensional plane wave expansion methods. The parameter working on the MSB is the ratio of the radius of air holes to the lattice constant, r/a. It is obtained that the critical r/a value determining the occurrence or disappearance of MSB is 0.36. When r/a is larger than or equal to 0.36, the MSB occurs. However, when r/a is smaller than 0.36, the MSB disappears.

  5. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

    NASA Astrophysics Data System (ADS)

    Heo, Junseok; Guo, Wei; Bhattacharya, Pallab

    2011-01-01

    Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density (˜108 cm-2) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at λ =371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of ˜120 kW/cm2 and the spontaneous emission factor β is estimated to be 0.08.

  6. Performance Prediction for a Hockey-Puck Silicon Crystal Monochromator at the Advanced Photon Source

    NASA Astrophysics Data System (ADS)

    Liu, Zunping; Rosenbaum, Gerd; Navrotski, Gary

    2014-03-01

    One of the Key Performance Parameters of the upgrade of the Advanced Photon Source (APS) is the increase of the storage ring current from 100 to 150 mA. In order to anticipate the impact of this increased heat load on the X-ray optics of the beamlines, the APS has implemented a systematic review, by means of finite element analysis and computational fluid dynamics, of the thermal performance of the different types of monochromators installed at the highest-heat-load insertion device beamlines. We present here simulations of the performance of a directly liquid nitrogen-cooled silicon crystal, the hockey-puck design. Calculations of the temperature and slope error at multiple ring currents under multiple operational conditions, including the influence of power, cooling, and diffraction surface thickness are included.

  7. Four-wave mixing in slow light engineered silicon photonic crystal waveguides.

    PubMed

    Monat, C; Ebnali-Heidari, M; Grillet, C; Corcoran, B; Eggleton, B J; White, T P; O'Faolain, L; Li, J; Krauss, T F

    2010-10-25

    We experimentally investigate four-wave mixing (FWM) in short (80 μm) dispersion-engineered slow light silicon photonic crystal waveguides. The pump, probe and idler signals all lie in a 14 nm wide low dispersion region with a near-constant group velocity of c/30. We measure an instantaneous conversion efficiency of up to -9dB between the idler and the continuous-wave probe, with 1W peak pump power and 6 nm pump-probe detuning. This conversion efficiency is found to be considerably higher (>10 × ) than that of a Si nanowire with a group velocity ten times larger. In addition, we estimate the FWM bandwidth to be at least that of the flat band slow light window. These results, supported by numerical simulations, emphasize the importance of engineering the dispersion of PhC waveguides to exploit the slow light enhancement of FWM efficiency, even for short device lengths.

  8. Characterization of the anamorphic and frequency dependent phenomenon in Liquid Crystal on Silicon displays

    NASA Astrophysics Data System (ADS)

    Lobato, L.; Lizana, A.; Márquez, A.; Moreno, I.; Iemmi, C.; Campos, J.; Yzuel, M. J.

    2011-04-01

    The diffractive efficiency of Liquid Crystal on Silicon (LCoS) displays can be greatly diminished by the appearance of temporal phase fluctuations in the reflected beam, depolarization effects and also because of phase modulation depths smaller than 2π. In order to maximize the efficiency of the Diffractive Optical Elements (DOEs) implemented in the LCoS device, the Minimum Euclidean Distance principle can be applied. However, not all the diffractive elements can be corrected in the same way due to the anamorphic and frequency dependent phenomenon, which is related to the LCoS response, largely dependending on the period and the spatial orientation of the generated DOE. Experimental evidence for the anamorphic and frequency dependent phenomenon is provided in this paper, as well as a comparative study between the efficiency obtained for binary gratings of different periods

  9. Molybdenum Silicide Formation on Single Crystal, Polycrystalline and Amorphous Silicon: Growth, Structure and Electrical Properties

    NASA Astrophysics Data System (ADS)

    Doland, Charles Michael

    The solid state reactions that occur between a thin metal film and a silicon substrate are of scientific and technological interest. The initial interactions are poorly understood, yet the final state may critically depend on the initial interactions. In this work, the reactions of thin molybdenum films on amorphous, polycrystalline, and single crystal silicon substrates were studied, with an emphasis on the initial interdiffusion and the nucleation of the crystalline silicide phase. Our research was carried out in an ultrahigh vacuum (UHV) system in order to minimize effects of contaminants. In situ Raman scattering and Auger electron spectroscopy were used to probe the structure and composition of the films. Electron microscopy, low energy electron diffraction and Schottky barrier height measurements were used to obtain additional information. The hexagonal phase of the disilicide (h-MoSi _2) is the first phase formed. This occurs after 30 minute annealing at 400^ circC on clean samples. Impurities interfere with this reaction, but substrate crystallinity has no effect. The hexagonal phase transforms to the tetragonal phase (t-MoSi_2) after 800 ^circC annealing for all substrate types. Contamination retards this reaction, resulting in films containing both phases. For the thin films in this study, the transformation to t-MoSi_2 is accompanied by agglomeration of the films. From bulk thermodynamics, t-MoSi_2 is expected to be the first phase formed, but h -MoSi_2 is the first phase observed. This phase nucleates before t-MoSi_2, due to a lower silicide-silicon interfacial energy. Detailed knowledge of interfacial energies and effects of impurities are required to understand the initial phases of thin film solid state reactions.

  10. Measurement of Microscopic Growth Rates in Float-Zone Silicon Crystals

    NASA Technical Reports Server (NTRS)

    Dold, P.; Schweizer, M.; Benz, K. W.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Time dependent convective flows during crystal growth of doped semiconductors lead to fluctuations of the composition, so called dopant striations. In general, it is difficult to decide which is the main mechanism for the generation of these striations, it might be either the fluctuation of the concentration field in the melt and the extent of the solute boundary layer ahead of the solid-liquid interface or a variation of the growth velocity. Direct access to the concentration field is rather complicated to achieve, especially considering the high process temperature and the chemical activity of liquid silicon. The contribution of growth rate fluctuations to the formation of compositional fluctuations can be determined by measuring microscopic growth rates. The classical method of current pulses requires electrical feed-throughs and good electrical contacts, both are critical issues for the growth of high purity silicon crystals. Using a radiation based heating system, the heating power can be modulated very fast and effectively. We added to the normal heater power a sinusoidal off-set in the frequency range of 1 to 10 Hz, generating a narrow spaced weak rippling in the grown crystals which are superposed to the dopant striations caused by natural and by thermocapillary convection. The pulling speed was varied between 1 and 4mm/min. The microscope images of etched crystals slices have been analyzed by peak-search algorithms (measuring the spacing between each artificially induced marker) and by FFT. Performing growth experiments under a time-dependent flow regime, fluctuations of the microscopic growth velocity of Delta(v)/v(sub average) up to 50% have been measured. Damping the time-dependent convection by the use of an axial, static magnetic field of 500mT, the microscopic growth rate became constant within the resolution limit of this method. The results will be discussed using analytical methods for the calculation of microscopic growth velocity and by

  11. Deposition and characterization of silicon thin-films by aluminum-induced crystallization

    NASA Astrophysics Data System (ADS)

    Ebil, Ozgenc

    Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined

  12. Preparation of dendritic-like Ag crystals using monocrystalline silicon as template

    SciTech Connect

    Wei, Yanlin; Chen, Yashao; Ye, Linjing; Chang, Pengmei

    2011-06-15

    Research highlights: {yields} Template-assisted method for synthesis of dendritic silver. {yields} Unique dendritic silver structure with stems, branches, and leaves. {yields} The morphology of silver depends on silicon surface roughness. {yields} Both diffusion and oriented attachment dominating the dendritic structure formation. -- Abstract: Symmetric dendritic silver structures with controlled morphology were successfully synthesized by a solvothermal method with the assistance of monocrystalline silicon. The morphology and structure of the dendritic silver were characterized by transmission electron microscopy (TEM), powder X-ray diffraction (XRD), and scanning electron microscopy (SEM). It was found that the architecture of silver crystals could be controlled via simply adjusting the experiment parameters: AgNO{sub 3} concentration, reaction time and temperature. Moreover, structural characterizations suggested that the dendritic silver structures preferentially grew along (1 1 1) and (2 0 0) directions, leading to the formation of dendritic structures with 1-2 {mu}m in stem diameter and 10-50 {mu}m in length. Additionally, the formation process of the dendritic silver structures was studied, and a possible formation mechanism was proposed based on the experimental results.

  13. Failure mechanisms of single-crystal silicon electrodes in lithium-ion batteries.

    PubMed

    Shi, Feifei; Song, Zhichao; Ross, Philip N; Somorjai, Gabor A; Ritchie, Robert O; Komvopoulos, Kyriakos

    2016-06-14

    Long-term durability is a major obstacle limiting the widespread use of lithium-ion batteries in heavy-duty applications and others demanding extended lifetime. As one of the root causes of the degradation of battery performance, the electrode failure mechanisms are still unknown. In this paper, we reveal the fundamental fracture mechanisms of single-crystal silicon electrodes over extended lithiation/delithiation cycles, using electrochemical testing, microstructure characterization, fracture mechanics and finite element analysis. Anisotropic lithium invasion causes crack initiation perpendicular to the electrode surface, followed by growth through the electrode thickness. The low fracture energy of the lithiated/unlithiated silicon interface provides a weak microstructural path for crack deflection, accounting for the crack patterns and delamination observed after repeated cycling. On the basis of this physical understanding, we demonstrate how electrolyte additives can heal electrode cracks and provide strategies to enhance the fracture resistance in future lithium-ion batteries from surface chemical, electrochemical and material science perspectives.

  14. Failure mechanisms of single-crystal silicon electrodes in lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Shi, Feifei; Song, Zhichao; Ross, Philip N.; Somorjai, Gabor A.; Ritchie, Robert O.; Komvopoulos, Kyriakos

    2016-06-01

    Long-term durability is a major obstacle limiting the widespread use of lithium-ion batteries in heavy-duty applications and others demanding extended lifetime. As one of the root causes of the degradation of battery performance, the electrode failure mechanisms are still unknown. In this paper, we reveal the fundamental fracture mechanisms of single-crystal silicon electrodes over extended lithiation/delithiation cycles, using electrochemical testing, microstructure characterization, fracture mechanics and finite element analysis. Anisotropic lithium invasion causes crack initiation perpendicular to the electrode surface, followed by growth through the electrode thickness. The low fracture energy of the lithiated/unlithiated silicon interface provides a weak microstructural path for crack deflection, accounting for the crack patterns and delamination observed after repeated cycling. On the basis of this physical understanding, we demonstrate how electrolyte additives can heal electrode cracks and provide strategies to enhance the fracture resistance in future lithium-ion batteries from surface chemical, electrochemical and material science perspectives.

  15. Photolithographic strategy for patterning preformed, chemically modified, porous silicon photonic crystal using click chemistry.

    PubMed

    Zhu, Ying; Gupta, Bakul; Guan, Bin; Ciampi, Simone; Reece, Peter J; Gooding, J Justin

    2013-07-24

    Porous silicon (PSi) is an ideal platform for label-free biosensing, and the development of porous silicon patterning will open a pathway to the development of highly parallel PSi biochips for detecting multiple analytes. The optical response of PSi photonic crystal is determined by the changes in the effective bulk refractive index resulting from reactions/events occurring within the internal pore space. Therefore, introducing precise chemical functionalities in the pores of PSi is essential to ensure device selectivity. Here we describe the fabrication of PSi patterns that possess discrete chemical functionalities that are restricted to precise locations. The key difference to previous patterning protocols for PSi is that the entire porous material is first modified with a self-assembled monolayer of a α,ω-diyne adsorbate prior to patterning using a microfabricated titanium mask. The distal alkyne moieties in the monolayer are then amenable to further selective modification by the archetypal "click" reaction, the copper catalyzed alkyne-azide cycloaddition (CuAAC), using the titanium mask as a resist. This type of patterning is suitable for further immobilization of biological recognition elements, and presents a new platform for highly parallel PSi biosensor for multiple detections.

  16. Failure mechanisms of single-crystal silicon electrodes in lithium-ion batteries

    PubMed Central

    Shi, Feifei; Song, Zhichao; Ross, Philip N.; Somorjai, Gabor A.; Ritchie, Robert O.; Komvopoulos, Kyriakos

    2016-01-01

    Long-term durability is a major obstacle limiting the widespread use of lithium-ion batteries in heavy-duty applications and others demanding extended lifetime. As one of the root causes of the degradation of battery performance, the electrode failure mechanisms are still unknown. In this paper, we reveal the fundamental fracture mechanisms of single-crystal silicon electrodes over extended lithiation/delithiation cycles, using electrochemical testing, microstructure characterization, fracture mechanics and finite element analysis. Anisotropic lithium invasion causes crack initiation perpendicular to the electrode surface, followed by growth through the electrode thickness. The low fracture energy of the lithiated/unlithiated silicon interface provides a weak microstructural path for crack deflection, accounting for the crack patterns and delamination observed after repeated cycling. On the basis of this physical understanding, we demonstrate how electrolyte additives can heal electrode cracks and provide strategies to enhance the fracture resistance in future lithium-ion batteries from surface chemical, electrochemical and material science perspectives. PMID:27297565

  17. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides.

    PubMed

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N Asger; Dong, Jianji; Ding, Yunhong

    2017-02-09

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW(-1) and power consumption per free spectral range of 3.99 mW. The rise and decay times (10-90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater.

  18. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    PubMed Central

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

    2017-01-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

  19. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    NASA Astrophysics Data System (ADS)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

    2017-02-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW-1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10-90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater.

  20. A super narrow band filter based on silicon 2D photonic crystal resonator and reflectors

    NASA Astrophysics Data System (ADS)

    Wang, Yuanyuan; Chen, Deyuan; Zhang, Gang; Wang, Juebin; Tao, Shangbin

    2016-03-01

    In this paper, a novel structure of super narrow band filter based on two-dimensional square lattice photonic crystals of silicon rods in air for 1.5 um communication is proposed and studied. COMSOL Multiphysics4.3b software is used to simulate the optical behavior of the filter. The filter consists of one point-defect-based resonator and two line-defect-based reflectors. The resonance frequency, transmission coefficient and quality factor are investigated by varying the parameters of the structure. In design, a silicon rod is removed to form the resonator; for the rows of rods above and below the resonator, a part of the rods are removed to form the reflectors. By optimizing the parameters of the filter, the quality factor and transmission coefficient of the filter at the resonance frequency of 2e14 Hz can reach 1330 and 0.953, respectively. The super narrow band filter can be integrated into optical circuit for its micron size. Also, it can be used for wavelength selection and noise filtering of optical amplifier in future communication application.

  1. Direct band gap silicon crystals predicted by an inverse design method

    NASA Astrophysics Data System (ADS)

    Oh, Young Jun; Lee, In-Ho; Lee, Jooyoung; Kim, Sunghyun; Chang, Kee Joo

    2015-03-01

    Cubic diamond silicon has an indirect band gap and does not absorb or emit light as efficiently as other semiconductors with direct band gaps. Thus, searching for Si crystals with direct band gaps around 1.3 eV is important to realize efficient thin-film solar cells. In this work, we report various crystalline silicon allotropes with direct and quasi-direct band gaps, which are predicted by the inverse design method which combines a conformation space annealing algorithm for global optimization and first-principles density functional calculations. The predicted allotropes exhibit energies less than 0.3 eV per atom and good lattice matches, compared with the diamond structure. The structural stability is examined by performing finite-temperature ab initio molecular dynamics simulations and calculating the phonon spectra. The absorption spectra are obtained by solving the Bethe-Salpeter equation together with the quasiparticle G0W0 approximation. For several allotropes with the band gaps around 1 eV, photovoltaic efficiencies are comparable to those of best-known photovoltaic absorbers such as CuInSe2. This work is supported by the National Research Foundation of Korea (2005-0093845 and 2008-0061987), Samsung Science and Technology Foundation (SSTF-BA1401-08), KIAS Center for Advanced Computation, and KISTI (KSC-2013-C2-040).

  2. Reduction of the bulk absorption coefficient in silicon optics for high-energy lasers through defect engineering.

    PubMed

    Goodman, W A; Goorsky, M S

    1995-06-20

    We engineered a factor-of-4 reduction in the bulk absorption coefficient over the 2.6-to-3.0-µm bandwidth in single-crystal Czochralski silicon optics for high-energy infrared lasers with high-temperature annealing treatments. Defect engineering adapted from the integrated circuit industry has been used to reduce the absorption coefficient across the 1.5-to-5-µm bandwidth for substrates up to 5 cm thick. A high-temperature oxygen-dispersion anneal dissolves precipitates and thermal donors that are present in the as-grown material. The process has been verified experimentally with Fourier transform infrared spectroscopy, infrared laser calorimetry, and Hall measurements. Reduction of the absorption coefficient results in less substrate heating and thermal distortion of the optical surface. The process is appropriate for other silicon infrared optics applications such as thermal-imaging systems, infrared windows, and spectrophotometers.

  3. Characterization of a PET detector head based on continuous LYSO crystals and monolithic, 64-pixel silicon photomultiplier matrices.

    PubMed

    Llosá, G; Barrio, J; Lacasta, C; Bisogni, M G; Del Guerra, A; Marcatili, S; Barrillon, P; Bondil-Blin, S; de la Taille, C; Piemonte, C

    2010-12-07

    The characterization of a PET detector head based on continuous LYSO crystals and silicon photomultiplier (SiPM) arrays as photodetectors has been carried out for its use in the development of a small animal PET prototype. The detector heads are composed of a continuous crystal and a SiPM matrix with 64 pixels in a common substrate, fabricated specifically for this project. Three crystals of 12 mm × 12 mm × 5 mm size with different types of painting have been tested: white, black and black on the sides but white on the back of the crystal. The best energy resolution, obtained with the white crystal, is 16% FWHM. The detector response is linear up to 1275 keV. Tests with different position determination algorithms have been carried out with the three crystals. The spatial resolution obtained with the center of gravity algorithm is around 0.9 mm FWHM for the three crystals. As expected, the use of this algorithm results in the displacement of the reconstructed position toward the center of the crystal, more pronounced in the case of the white crystal. A maximum likelihood algorithm has been tested that can reconstruct correctly the interaction position of the photons also in the case of the white crystal.

  4. Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences

    PubMed Central

    Guo, Shuang; Xu, Liping; Zhang, Jinzhong; Hu, Zhigao; Li, Tao; Wu, Liangcai; Song, Zhitang; Chu, Junhao

    2016-01-01

    The optical properties and structural variations of silicon (Si) doped Sb2Te (SST) films as functions of temperature (210–620 K) and Si concentration (0–33%) have been investigated by the means of temperature dependent Raman scattering and spectroscopic ellipsometry experiments. Based upon the changes in Raman phonon modes and dielectric functions, it can be concluded that the temperature ranges for intermediates and transition states are estimated to 150, 120, 90, and 0 K, corresponding to ST, SST25%, SST28%, and SST33% films, respectively. The phenomenon also can be summarized by the thermal evolutions of interband electronic transition energies (En) and partial spectral weight integral (I). The disappearance of intermediate (INT) state for SST33% film between amorphous (AM) and hexagonal (HEX) phases can be attributed to the acceleratory crystallization of HEX phase by Si introduction. It illustrates that the risk of phase separation (Sb and Te) during the cyclic phase-change processes decreases with the increasing Si concentration. The enhanced crystallization behaviors can optimize the data retention ability and the long term stability of ST by Si doping, which are important indicators for phase change materials. The performance improvement has been analyzed qualitatively from the optical perspective. PMID:27640336

  5. Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

    SciTech Connect

    Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong; Mi, Hongyi; Kim, Munho; Ma, Zhenqiang; Zhao, Deyin; Zhou, Weidong; Yin, Xin; Wang, Xudong

    2015-05-04

    In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.

  6. Evolution of porous silicon crystal structure during storage in ambient air

    NASA Astrophysics Data System (ADS)

    Sorokin, L. M.; Ratnikov, V. V.; Kalmykov, A. E.; Sokolov, V. I.

    2010-02-01

    Both double- and triple- crystal X-ray diffraction techniques (X-ray DCD and TCD techniques) together with transmission electron microscopy (TEM) were employed for the investigation of structural changes in porous silicon (PS) layers during prolonged periods (up to 6800 hours) of their storage in ambient air. Apart from the Bragg reflection from the Si substrate, the diffraction pattern contains an additional maximum caused by the presence of the PS layer with an increased lattice parameter. The position of this peak shifts to smaller Bragg angles and its intensity decreases as the time of storage in air increases. In addition, the profiles of such peaks become clearly asymmetric. In this case, Gaussian curves were used to reach a fit to the experimental X-ray rocking curves. All samples were biaxially bent due to compressive stresses that arise as soon as 10 min after electrochemical process. The values of lattice strains along the surface normal (Δd/d)⊥ and lateral deformation (Δd/d)|| were estimated to be ~ +10-3, ~ -10-5 respectively. The analysis of diffraction curve evolution shows a gradual destruction of the crystal lattice caused by the air oxidation process.

  7. Air-mode photonic crystal ring resonator on silicon-on-insulator

    PubMed Central

    Gao, Ge; Zhang, Yong; Zhang, He; Wang, Yi; Huang, Qingzhong; Xia, Jinsong

    2016-01-01

    In this report, we propose and demonstrate an air-mode photonic crystal ring resonator (PhCRR) on silicon-on-insulator platform. Air mode is utilized to confine the optical field into photonic crystal (PhC) air holes, which is confirmed by the three-dimensional finite-difference time-domain simulation. PhCRR structure is employed to enhance the light-matter interaction through combining the whispering-gallery mode resonance of ring resonator with the slow-light effect in PhC waveguide. In the simulated and measured transmission spectra of air-mode PhCRR, nonuniform free spectral ranges are observed near the Brillouin zone edge of PhC, indicating the presence of the slow-light effect. A maximum group index of 27.3 and a highest quality factor of 14600 are experimentally obtained near the band edge. Benefiting from the strong optical confinement in the PhC holes and enhanced light-matter interaction in the resonator, the demonstrated air-mode PhCRR is expected to have potential applications in refractive index sensing, on-chip light emitting and nonlinear optics by integration with functional materials. PMID:26818430

  8. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering

    PubMed Central

    2012-01-01

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters. PMID:23031449

  9. Shaped Crystal Growth

    NASA Astrophysics Data System (ADS)

    Tatartchenko, Vitali A.

    Crystals of specified shape and size (shaped crystals) with controlled crystal growth (SCG) defect and impurity structure have to be grown for the successful development of modern engineering. Since the 1950s many hundreds of papers and patents concerned with shaped growth have been published. In this chapter, we do not try to enumerate the successful applications of shaped growth to different materials but rather to carry out a fundamental physical and mathematical analysis of shaping as well as the peculiarities of shaped crystal structures. Four main techniques, based on which the lateral surface can be shaped without contact with the container walls, are analyzed: the Czochralski technique (CZT), the Verneuil technique (VT), the floating zone technique (FZT), and technique of pulling from shaper (TPS). Modifications of these techniques are analyzed as well. In all these techniques the shape of the melt meniscus is controlled by surface tension forces, i.e., capillary forces, and here they are classified as capillary shaping techniques (CST). We look for conditions under which the crystal growth process in each CST is dynamically stable. Only in this case are all perturbations attenuated and a crystal of constant cross section shaping technique (CST) grown without any special regulation. The dynamic stability theory of the crystal growth process for all CST is developed on the basis of Lyapunov's dynamic stability theory. Lyapunov's equations for the crystal growth processes follow from fundamental laws. The results of the theory allow the choice of stable regimes for crystal growth by all CST as well as special designs of shapers in TPS. SCG experiments by CZT, VT, and FZT are discussed but the main consideration is given to TPS. Shapers not only allow crystal of very complicated cross section to be grown but provide a special distribution of impurities. A history of TPS is provided later in the chapter, because it can only be described after explanation of the

  10. Cross two photon absorption in a silicon photonic crystal waveguide fiber taper coupler with a physical junction

    SciTech Connect

    Sarkissian, Raymond O'Brien, John

    2015-01-21

    Cross two photon absorption in silicon is characterized using a tapered fiber photonic crystal silicon waveguide coupler. There is a physical junction between the tapered fiber and the waveguide constituting a stand-alone device. This device is used to obtain the spectrum for cross two photon absorption coefficient per unit volume of interaction between photons of nondegenerate energy. The corresponding Kerr coefficient per unit volume of interaction is also experimentally extracted. The thermal resistance of the device is also experimentally determined and the response time of the device is estimated for on-chip all-optical signal processing and data transfer between optical signals of different photon energies.

  11. Monitoring of degradation of porous silicon photonic crystals using digital photography

    PubMed Central

    2014-01-01

    We report the monitoring of porous silicon (pSi) degradation in aqueous solutions using a consumer-grade digital camera. To facilitate optical monitoring, the pSi samples were prepared as one-dimensional photonic crystals (rugate filters) by electrochemical etching of highly doped p-type Si wafers using a periodic etch waveform. Two pSi formulations, representing chemistries relevant for self-reporting drug delivery applications, were tested: freshly etched pSi (fpSi) and fpSi coated with the biodegradable polymer chitosan (pSi-ch). Accelerated degradation of the samples in an ethanol-containing pH 10 aqueous basic buffer was monitored in situ by digital imaging with a consumer-grade digital camera with simultaneous optical reflectance spectrophotometric point measurements. As the nanostructured porous silicon matrix dissolved, a hypsochromic shift in the wavelength of the rugate reflectance peak resulted in visible color changes from red to green. While the H coordinate in the hue, saturation, and value (HSV) color space calculated using the as-acquired photographs was a good monitor of degradation at short times (t < 100 min), it was not a useful monitor of sample degradation at longer times since it was influenced by reflections of the broad spectral output of the lamp as well as from the narrow rugate reflectance band. A monotonic relationship was observed between the wavelength of the rugate reflectance peak and an H parameter value calculated from the average red-green-blue (RGB) values of each image by first independently normalizing each channel (R, G, and B) using their maximum and minimum value over the time course of the degradation process. Spectrophotometric measurements and digital image analysis using this H parameter gave consistent relative stabilities of the samples as fpSi > pSi-ch. PMID:25242902

  12. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Cobb, S. D.; Motakef, S.; Croell, A.; Dold, P.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

  13. Monitoring of degradation of porous silicon photonic crystals using digital photography

    NASA Astrophysics Data System (ADS)

    Ariza-Avidad, Maria; Nieto, Alejandra; Salinas-Castillo, Alfonso; Capitan-Vallvey, Luis F.; Miskelly, Gordon M.; Sailor, Michael J.

    2014-08-01

    We report the monitoring of porous silicon (pSi) degradation in aqueous solutions using a consumer-grade digital camera. To facilitate optical monitoring, the pSi samples were prepared as one-dimensional photonic crystals (rugate filters) by electrochemical etching of highly doped p-type Si wafers using a periodic etch waveform. Two pSi formulations, representing chemistries relevant for self-reporting drug delivery applications, were tested: freshly etched pSi (fpSi) and fpSi coated with the biodegradable polymer chitosan (pSi-ch). Accelerated degradation of the samples in an ethanol-containing pH 10 aqueous basic buffer was monitored in situ by digital imaging with a consumer-grade digital camera with simultaneous optical reflectance spectrophotometric point measurements. As the nanostructured porous silicon matrix dissolved, a hypsochromic shift in the wavelength of the rugate reflectance peak resulted in visible color changes from red to green. While the H coordinate in the hue, saturation, and value (HSV) color space calculated using the as-acquired photographs was a good monitor of degradation at short times ( t < 100 min), it was not a useful monitor of sample degradation at longer times since it was influenced by reflections of the broad spectral output of the lamp as well as from the narrow rugate reflectance band. A monotonic relationship was observed between the wavelength of the rugate reflectance peak and an H parameter value calculated from the average red-green-blue (RGB) values of each image by first independently normalizing each channel ( R, G, and B) using their maximum and minimum value over the time course of the degradation process. Spectrophotometric measurements and digital image analysis using this H parameter gave consistent relative stabilities of the samples as fpSi > pSi-ch.

  14. Cybotactic behavior in the de Vries smectic-A* liquid-crystal structure formed by a silicon-containing molecule.

    PubMed

    Ryu, Seong Ho; Shin, Tae Joo; Gong, Tao; Shen, Yongqiang; Korblova, Eva; Shao, Renfan; Walba, David M; Clark, Noel A; Yoon, Dong Ki

    2014-03-01

    We have identified a metastable liquid-crystal (LC) structure in the de Vries smectic-A* phase (de Vries Sm-A*) formed by silicon-containing molecules under certain boundary conditions. The phase transition with the metastable structure was observed in a LC droplet placed on a planar aligned substrate and LCs confined in the groove of a silicon microchannel. During the rapid cooling step, a batonnet structure was generated as an intermediate and metastable state prior to the transition that yielded the thermodynamically stable toric focal conic domains. This distinctive behavior was characterized using depolarized reflection light microscopy and grazing incidence x-ray diffraction techniques. We concluded that the silicon groups in the molecules that formed the de Vries phase induced the formation of layered clusters called cybotactic structures. This observation is relevant to an exploration of the physical properties of cybotactic de Vries phases and gives a hint as to their optoelectronic applications.

  15. Cybotactic behavior in the de Vries smectic-A* liquid-crystal structure formed by a silicon-containing molecule

    NASA Astrophysics Data System (ADS)

    Ryu, Seong Ho; Shin, Tae Joo; Gong, Tao; Shen, Yongqiang; Korblova, Eva; Shao, Renfan; Walba, David M.; Clark, Noel A.; Yoon, Dong Ki

    2014-03-01

    We have identified a metastable liquid-crystal (LC) structure in the de Vries smectic-A* phase (de Vries Sm-A*) formed by silicon-containing molecules under certain boundary conditions. The phase transition with the metastable structure was observed in a LC droplet placed on a planar aligned substrate and LCs confined in the groove of a silicon microchannel. During the rapid cooling step, a batonnet structure was generated as an intermediate and metastable state prior to the transition that yielded the thermodynamically stable toric focal conic domains. This distinctive behavior was characterized using depolarized reflection light microscopy and grazing incidence x-ray diffraction techniques. We concluded that the silicon groups in the molecules that formed the de Vries phase induced the formation of layered clusters called cybotactic structures. This observation is relevant to an exploration of the physical properties of cybotactic de Vries phases and gives a hint as to their optoelectronic applications.

  16. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    NASA Astrophysics Data System (ADS)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E.

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.

  17. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Kaiser, N.; Cobb, S. D.; Motakef, S.; Vujisic, L. J.; Croell, A.; Dold, P.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS) to differentiate among proposed mechanisms contributing to detachment. Sessile drop measurements were first carried out for a large number of substrates made of potential ampoule materials to determine the contact angles and the surface tension as a function of temperature and composition. The process atmosphere and duration of the experiment (for some cases) were also found to have significant influence on the wetting angle. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases to an equilibrium value with duration of measurement ranging from 150 to 117 deg (Ge), 129 to 100 deg (GeSi). Forming gas (Ar + 2% H2) and vacuum have been used in the growth ampoules. With gas in the ampoule, a variation of the temperature profile during growth has been used to control the pressure difference between the top of the melt and the volume below the melt caused by detachment of the growing crystal. The stability of detachment has been modeled and substantial insight has been gained into the reasons that detachment has most often been observed in reduced gravity but nonetheless has occurred randomly even there. An empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed and will be presented. Methods for determining the nature and extent of detachment include profilometry and optical and electron microscopy. This surface study is the subject of another presentation at this Congress. Results in this presentation will show that we have

  18. Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

    SciTech Connect

    Kopach, V. R.; Kirichenko, M. V. Khrypunov, G. S.; Zaitsev, R. V.

    2010-06-15

    It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25-2 {mu}m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer >1 {mu}m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.

  19. Proceedings of the Flat-Plate Solar Array Project Workshop on Crystal Gowth for High-Efficiency Silicon Solar Cells

    NASA Technical Reports Server (NTRS)

    Dumas, K. A. (Editor)

    1985-01-01

    A Workshop on Crystal Growth for High-Efficiency Silicon Solar Cells was held December 3 and 4, 1984, in San Diego, California. The Workshop offered a day and a half of technical presentations and discussions and an afternoon session that involved a panel discussion and general discussion of areas of research that are necessary to the development of materials for high-efficiency solar cells. Topics included the theoretical and experimental aspects of growing high-quality silicon crystals, the effects of growth-process-related defects on photovoltaic devices, and the suitability of various growth technologies as cost-effective processes. Fifteen invited papers were presented, with a discussion period following each presentation. The meeting was organized by the Flat-Plate Solar Array Project of the Jet Propulsion Laboratory. These Proceedings are a record of the presentations and discussions, edited for clarity and continuity.

  20. Glass-embedded two-dimensional silicon photonic crystal devices with a broad bandwidth waveguide and a high quality nanocavity.

    PubMed

    Jeon, Seung-Woo; Han, Jin-Kyu; Song, Bong-Shik; Noda, Susumu

    2010-08-30

    To enhance the mechanical stability of a two-dimensional photonic crystal slab structure and maintain its excellent performance, we designed a glass-embedded silicon photonic crystal device consisting of a broad bandwidth waveguide and a nanocavity with a high quality (Q) factor, and then fabricated the structure using spin-on glass (SOG). Furthermore, we showed that the refractive index of the SOG could be tuned from 1.37 to 1.57 by varying the curing temperature of the SOG. Finally, we demonstrated a glass-embedded heterostructured cavity with an ultrahigh Q factor of 160,000 by adjusting the refractive index of the SOG.

  1. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.

    PubMed

    Tanabe, Katsuaki; Nomura, Masahiro; Guimard, Denis; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2009-04-27

    Room temperature, continuous-wave lasing in a quantum dot photonic crystal nanocavity on a Si substrate has been demonstrated by optical pumping. The laser was an air-bridge structure of a two-dimensional photonic crystal GaAs slab with InAs quantum dots inside on a Si substrate fabricated through wafer bonding and layer transfer. This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon.

  2. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  3. Correlation of solar cell electrical properties with material characteristics of silicon cast by the ubiquitous crystallization process

    NASA Technical Reports Server (NTRS)

    Hyland, S.; Leung, D.; Morrison, A.; Stika, K.; Yoo, H.

    1983-01-01

    Solar cells were fabricated using a conservative 'baseline' process on 1-3 Omega-cm p-type silicon from ingots cast by the ubiquitous crystallization process. Conversion efficiencies of the cells were measured, as well as spectral response and minority carrier diffusion length. Adjacent slices from the same ingot were studied for their grain size, dislocation distribution, and impurity distribution. Cell performance was related to the observed structural features, as well as to the chemical structure of the ingot.

  4. Top-seed solution growth and characterization of AlSb single crystals for gamma-ray detectors. Final report, 1 October 1994--30 September 1995

    SciTech Connect

    Witt, A.F.; Becla, P.; Counterman, C.; DiFrancesco, J.; Landahl, G.; Morse, K.; Sanchez, J.

    1996-01-26

    The ultimate objective of the conducted research is to ascertain the potential of AlSb (in single crystal form) for application as {gamma}-detector material operating at room temperature. To this end approaches to crystal growth were to be developed which permit control of growth parameters affecting critical application specific properties of AlSb. The research was focused on exploration of the effectiveness of the Czochralski method and on the development of methods and procedures leading to AlSb crystals with low free carrier concentration and a high mobility-lifetime product. Conventional melt growth of AlSb by the Czochralski technique (from stoichiometric charges) generally yielded material with high net carrier concentrations and low mobility-lifetime products. Significant improvement in crystal properties was achieved, when operating with non-stoichiometric melts, containing Sb in excess at levels of 3 to 10 mol%, further improvements were obtained when changing ambient argon pressure from atmospheric to 300 psi, and using high purity alumina crucibles which were inductively heated with a graphite susceptor CVD coated with silicon-carbide. Initial efforts to reduce evaporative loss of Sb through application of the LEC technique (liquid encapsulated Czochralski) with conventional encapsulants (B{sub 2}O{sub 3}, LiF, CaF{sub 2}) failed because of their interaction with the crucible and the AlSb melt. Compensation techniques (based on extrinsic doping) were found to lead to the desired reduction of free carriers in AlSb. Such material, however, exhibits a significant decrease of charge carrier mobility and lifetime. Early termination of this research program prevented optimization of critical materials properties in AlSb and precluded at this time a realistic assessment of the potential of this material for solid state detector applications.

  5. Study of resonant modes in a 700 nm pitch macroporous silicon photonic crystal

    NASA Astrophysics Data System (ADS)

    Cardador, D.; Vega, D.; Segura, D.; Rodríguez, A.

    2017-01-01

    In this study the modes produced by a defect inserted in a macroporous silicon (MP) photonic crystal (PC) have been studied theoretical and experimentally. In particular, the transmitted and reflected spectra have been analyzed for variations in the defect's length and width. The performed simulations show that the resonant frequency is more easily adjusted for the fabricated samples by length tuning rather than width. The optimum resonance peak results when centered in the PC bandgap. The changes in the defect geometry result in small variations of the optical response of the PC. The resonance frequency is most sensitive to length variations, while the mode linewidth shows greater change with the defect width variation. Several MPS photonic crystals were fabricated by the electrochemical etching (EE) process with optical response in the range of 5.8 μm to 6.5 μm. Results of the characterization are in good agreement with simulations. Further samples were fabricated consisting of ordered modulated pores with a pitch of 700 nm. This allowed to reduce the vertical periodicity and therefore to have the optical response in the range of 4.4 μm to 4.8 μm. To our knowledge, modes working in this range of wavelengths have not been previously reported in 3-d MPS structures. Experimental results match with simulations, showing a linear relationship between the defect's length and working frequency inside the bandgap. We demonstrate the possibility of tailoring the resonance peak in both ranges of wavelengths, where the principal absorption lines of different gases in the mid infrared are placed. This makes these structures very promising for their application to compact gas sensors.

  6. Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAs

    SciTech Connect

    Dobrilla, P.; Blakemore, J.S.

    1986-07-01

    Distributions of stress, dislocations, and the EL2 midgap defect have been optically mapped in semi-insulating GaAs wafers, from (100)-grown crystals created by the liquid-encapsulated Czochralski method. The evolution of EL2 along the growth axis indicates that assessment of this property through the majority of the crystal volume is often poorly represented by wafers from near the two end regions. A comparison of maps for stress, dislocation and EL2 patterns as all measured with a given wafer does not support hypotheses that EL2 is a direct consequence either of stress or of dislocations. Other mechanisms, such as segregation and melt dynamics, thus appear more likely to control the formation and distribution of EL2.

  7. Effect of Heat Transfer during the Vacuum Directional Solidification Process on the Crystal Quality of Multicrystalline Silicon

    NASA Astrophysics Data System (ADS)

    Yang, Xi; Ma, Wenhui; Lv, Guoqiang; Wei, Kuixian; Zhang, Cong; Li, Shaoyuan; Chen, Daotong

    2015-03-01

    Directional solidification (DS) is the most popular technique for massive production of multicrystalline silicon (mc-Si) in the solar industry. Constant improvement of the quality of silicon ingot production remains a research focus. In this work, the temperature distribution, thermal stresses, and melt-crystal (m/c) interface during the DS process with different pulling-down rates were studied by transient numerical simulation and verified by experiment. The results show that the thermal stresses and interface shape during crystal growth play an equally important role in the control of crystal quality, requiring an appropriate pulling-down rate to achieve thermal conditions in the furnace that provide an ideal temperature field in the silicon with lower thermal stresses and a suitable growth interface. Based on these results, an mc-Si ingot grown at 10 μm/s in a pilot-scale DS process had a larger grain size, vertical columnar structure, fewer defects, and a longer minority-carrier lifetime above 3 μs. This suggests that improvement of the quality of mc-Si ingots for solar cells requires comprehensive consideration of the effect of the thermal field conditions on the thermal stresses and grain orientation in the solidification process.

  8. Energy logistics in an all-optical adder based on a 1D porous silicon photonic crystal

    NASA Astrophysics Data System (ADS)

    Glushko, E. Ya.

    2011-09-01

    The ideology of a photonic crystal resonator covered with optically nonlinear layers is proposed for binary adder and logic gates of various kinds. The all-optical way to transform a physically added sequence of signals into the logical sequence with corresponding shift of digital units is based on the nonlinear band shift effect. In this work, the electromagnetic field structure for optically linear 1D porous silicon photonic crystal is investigated. The optical parameters of a 1D photonic crystal resonator built on layered porous silicon covered with a nonlinear layer are calculated for various nonlinear materials. An approximate design of an all-optical adder based on 1D porous silicon resonator is considered. The adder heating by powered optical pulses and energy distribution inside the device are analyzed and the problem solution with the use of special semitransparent redirecting mirrors is proposed. It was found that from the point of view of heating the R-scheme of signal processing is more optimal.

  9. Dendritic web - A viable material for silicon solar cells

    NASA Technical Reports Server (NTRS)

    Seidensticker, R. G.; Scudder, L.; Brandhorst, H. W., Jr.

    1975-01-01

    The dendritic web process is a technique for growing thin silicon ribbon from liquid silicon. The material is suitable for solar cell fabrication and, in fact, cells fabricated on web material are equivalent in performance to cells fabricated on Czochralski-grown material. A recently concluded study has delineated the thermal requirements for silicon web crucibles, and a detailed conceptual design has been developed for a laboratory growth apparatus.

  10. Analysis of multiple internal reflections in a parallel aligned liquid crystal on silicon SLM.

    PubMed

    Martínez, José Luis; Moreno, Ignacio; del Mar Sánchez-López, María; Vargas, Asticio; García-Martínez, Pascuala

    2014-10-20

    Multiple internal reflection effects on the optical modulation of a commercial reflective parallel-aligned liquid-crystal on silicon (PAL-LCoS) spatial light modulator (SLM) are analyzed. The display is illuminated with different wavelengths and different angles of incidence. Non-negligible Fabry-Perot (FP) effect is observed due to the sandwiched LC layer structure. A simplified physical model that quantitatively accounts for the observed phenomena is proposed. It is shown how the expected pure phase modulation response is substantially modified in the following aspects: 1) a coupled amplitude modulation, 2) a non-linear behavior of the phase modulation, 3) some amount of unmodulated light, and 4) a reduction of the effective phase modulation as the angle of incidence increases. Finally, it is shown that multiple reflections can be useful since the effect of a displayed diffraction grating is doubled on a beam that is reflected twice through the LC layer, thus rendering gratings with doubled phase modulation depth.

  11. Comparison of silicon photonic crystal resonator designs for optical trapping of nanomaterials.

    PubMed

    Serey, X; Mandal, S; Erickson, D

    2010-07-30

    The use of silicon photonic devices for optical manipulation has recently enabled the direct handling of objects like nucleic acids and nanoparticles that are much smaller than could previously be trapped using traditional laser tweezers. The ability to manipulate even smaller matter however requires the development of photonic structures with even stronger trapping potentials. In this work we investigate theoretically several photonic crystal resonator designs and characterize the achievable trapping stiffness and trapping potential depth (sometimes referred to as the trapping stability). Two effects are shown to increase these trapping parameters: field enhancement in the resonator and strong field containment. We find trapping stiffness as high as 22.3 pN nm(-1) for 100 nm polystyrene beads as well as potential depth of 51,000 k(B)T at T = 300 K, for one Watt of power input to the bus waveguide. Under the same conditions for 70 nm polystyrene beads, we find a stiffness of 69 pN nm(-1) and a potential depth of 177,000 k(B)T. Our calculations suggest that with input power of 10 mW we could trap particles as small as 7.7 nm diameter with a trapping depth of 500 k(B)T. We expect these traps to eventually enable the manipulation of small matter such as single proteins, carbon nanotubes and metallic nanoparticles.

  12. Silicon photonic crystal nanocavity-coupled waveguides for error-corrected optical biosensing.

    PubMed

    Pal, Sudeshna; Guillermain, Elisa; Sriram, Rashmi; Miller, Benjamin L; Fauchet, Philippe M

    2011-06-15

    A photonic crystal (PhC) waveguide based optical biosensor capable of label-free and error-corrected sensing was investigated in this study. The detection principle of the biosensor involved shifts in the resonant mode wavelength of nanocavities coupled to the silicon PhC waveguide due to changes in ambient refractive index. The optical characteristics of the nanocavity structure were predicted by FDTD theoretical methods. The device was fabricated using standard nanolithography and reactive-ion-etching techniques. Experimental results showed that the structure had a refractive index sensitivity of 10(-2) RIU. The biosensing capability of the nanocavity sensor was tested by detecting human IgG molecules. The device sensitivity was found to be 2.3±0.24×10(5) nm/M with an achievable lowest detection limit of 1.5 fg for human IgG molecules. Additionally, experimental results demonstrated that the PhC devices were specific in IgG detection and provided concentration-dependent responses consistent with Langmuir behavior. The PhC devices manifest outstanding potential as microscale label-free error-correcting sensors, and may have future utility as ultrasensitive multiplex devices.

  13. Silicon Photonic Crystal Nanocavity-Coupled Waveguides for Error-Corrected Optical Biosensing

    PubMed Central

    Pal, Sudeshna; Guillermain, Elisa; Sriram, Rashmi; Miller, Benjamin L.; Fauchet, Philippe M.

    2011-01-01

    A photonic crystal (PhC) waveguide based optical biosensor capable of label-free and error-corrected sensing was investigated in this study. The detection principle of the biosensor involved shifts in the resonant mode wavelength of nanocavities coupled to the silicon PhC waveguide due to changes in ambient refractive index. The optical characteristics of the nanocavity structure were predicted by FDTD theoretical methods. The device was fabricated using standard nanolithography and reactive-ion-etching techniques. Experimental results showed that the structure had a refractive index sensitivity of 10−2 RIU. The biosensing capability of the nanocavity sensor was tested by detecting human IgG molecules. The device sensitivity was found to be 2.3 ± 0.24 × 105 nm/M with an achievable lowest detection limit of 1.5 fg for human IgG molecules. Additionally, experimental results demonstrated that the PhC devices were specific in IgG detection and provided concentration-dependent responses consistent with Langmuir behavior. The PhC devices manifest outstanding potential as microscale label-free error-correcting sensors, and may have future utility as ultrasensitive multiplex devices. PMID:21524903

  14. Mueller-Stokes characterization and optimization of a liquid crystal on silicon display showing depolarization.

    PubMed

    Márquez, A; Moreno, I; Iemmi, C; Lizana, A; Campos, J; Yzuel, M J

    2008-02-04

    In this paper we characterize the polarimetric properties of a liquid crystal on silicon display (LCoS), including depolarization and diattenuation which are usually not considered when applying the LCoS in diffractive or adaptive optics. On one hand, we have found that the LCoS generates a certain degree (that can be larger than a 10%) of depolarized light, which depends on the addressed gray level and on the incident state of polarization (SOP), and can not be ignored in the above mentioned applications. The main origin of the depolarized light is related with temporal fluctuations of the SOP of the light reflected by the LCoS. The Mueller matrix of the LCoS is measured as a function of the gray level, which enables for a numerical optimization of the intensity modulation configurations. In particular we look for maximum intensity contrast modulation or for constant intensity modulation. By means of a heuristic approach we show that, using elliptically polarized light, amplitude-mostly or phase-mostly modulation can be obtained at a wavelength of 633 nm.

  15. Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I.

    PubMed

    Kohn, V G; Khikhlukha, D R

    2016-05-01

    This paper reports computer simulations of the transmitted-beam intensity distribution for the case of six-beam (000, 220, 242, 044, -224, -202) diffraction of X-rays in a perfect silicon crystal of thickness 1 mm. Both the plane-wave angular dependence and the six-beam section topographs, which are usually obtained in experiments with a restricted beam (two-dimensional slit), are calculated. The angular dependence is calculated in accordance with Ewald's theory. The section topographs are calculated from the angular dependence by means of the fast Fourier transformation procedure. This approach allows one to consider, for the first time, the transformation of the topograph's structure due to the two-dimensional slit sizes and the distance between the slit and the detector. The results are in good agreement with the results of other works and with the experimental data. This method of calculation does not require a supercomputer and it was performed on a standard laptop. A detailed explanation of the main features of the diffraction patterns at different distances between the slit and the detector is presented.

  16. Ultracompact all-optical XOR logic gate in a slow-light silicon photonic crystal waveguide.

    PubMed

    Husko, C; Vo, T D; Corcoran, B; Li, J; Krauss, T F; Eggleton, B J

    2011-10-10

    We demonstrate an ultracompact, chip-based, all-optical exclusive-OR (XOR) logic gate via slow-light enhanced four-wave mixing (FWM) in a silicon photonic crystal waveguide (PhCWG). We achieve error-free operation (<10⁻⁹) for 40 Gbit/s differential phase-shift keying (DPSK) signals with a 2.8 dB power penalty. Slowing the light to vg = c/32 enables a FWM conversion efficiency, η, of -30 dB for a 396 μm device. The nonlinear FWM process is enhanced by 20 dB compared to a relatively fast mode of vg = c/5. The XOR operation requires ≈ 41 mW, corresponding to a switching energy of 1 pJ/bit. We compare the slow-light PhCWG device performance with experimentally demonstrated XOR DPSK logic gates in other platforms and discuss scaling the device operation to higher bit-rates. The ultracompact structure suggests the potential for device integration.

  17. Theory of pulsed four-wave mixing in one-dimensional silicon photonic crystal slab waveguides

    NASA Astrophysics Data System (ADS)

    Lavdas, Spyros; Panoiu, Nicolae C.

    2016-03-01

    We present a comprehensive theoretical analysis and computational study of four-wave mixing (FWM) of optical pulses co-propagating in one-dimensional silicon photonic crystal waveguides (Si-PhCWGs). Our theoretical analysis describes a very general setup of the interacting optical pulses, namely we consider nondegenerate FWM in a configuration in which at each frequency there exists a superposition of guiding modes. We incorporate in our theoretical model all relevant linear optical effects, including waveguide loss, free-carrier (FC) dispersion and FC absorption, nonlinear optical effects such as self- and cross-phase modulation (SPM, XPM), two-photon absorption (TPA), and cross-absorption modulation (XAM), as well as the coupled dynamics of free-carriers FCs and optical field. In particular, our theoretical analysis based on the coupled-mode theory provides rigorously derived formulas for linear dispersion coefficients of the guiding modes, linear coupling coefficients between these modes, as well as the nonlinear waveguide coefficients describing SPM, XPM, TPA, XAM, and FWM. In addition, our theoretical analysis and numerical simulations reveal key differences between the characteristics of FWM in the slow- and fast-light regimes, which could potentially have important implications to the design of ultracompact active photonic devices.

  18. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect

    Kumar, Avishek E-mail: dalapatig@imre.a-star.edu.sg; Law, Felix; Widenborg, Per I.; Dalapati, Goutam K. E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R.; Aberle, Armin G.

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  19. Crystallization of grain boundary phases in silicon nitride with low additive contents by microwave annealing

    SciTech Connect

    Tiegs, T.N.; Ploetz, K.L.; Kiggans, J.O.; Yeckley, R.L.

    1993-06-01

    Microwave annealing of dense Si{sub 3}N{sub 4}-4% Y{sub 2}O{sub 3} materials showed improvements over conventional heating. Increases in fracture toughness were observed for annealing between 1200--1650C. The high temperature strength was related to the residual {alpha}-Si{sub 3}N{sub 4} content which is indicative of a finer average grain size in the specimens. The high temperature dynamic fatigue showed increased stress to failure for specimens microwave annealed between 1400--1550C for periods >5 h. Silicon nitrides with different sintering additives would require different conditions for optimum crystallization. While there were some observed property improvements, they were not so dramatic to justify abandoning conventional over microwave heating. The Si{sub 3}N{sub 4}-4% Y{sub 2}O{sub 3} materials used in the study were developed for elevated temperature use and already posses excellent good high temperature strength, fatigue resistance and creep properties. This is due to the very refractory nature of the grain boundary phases and the small quantity of secondary phase present. However, microwave annealing of these materials may be necessary in applications where the maximum in fracture toughness and fatigue resistance are required and thus justifies its use.

  20. Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation

    NASA Astrophysics Data System (ADS)

    Hayashi, Shohei; Morisaki, Seiji; Kamikura, Takahiro; Yamamoto, Shogo; Sakaike, Kohei; Akazawa, Muneki; Higashi, Seiichiro

    2014-01-01

    Amorphous silicon (a-Si) films were crystallized using three grain growth modes induced by micro-thermal-plasma-jet (µ-TPJ) irradiation and applied to the channel regions of thin-film transistors (TFTs). Solid phase crystallization (SPC) formed microcrystalline grains and showed a lower crystallinity of 70%, whereas leading wave crystallization (LWC) and high-speed lateral crystallization (HSLC) formed significantly larger grains than the TFT channel region. The SPC-TFT showed a lower field-effect mobility (μFE) due to the small grain size and the existence of many grain boundaries, whereas LWC- and HSLC-TFT channels were formed by only single grains and showed a μFE higher than 300 cm2 V-1 s-1 in the n-channel. The defect density of HSLC was smaller than that of LWC; consequently, the HSLC-TFT performed better than the LWC-TFT. The maximum μFE values of n- and p-channel HSLC-TFTs were 418 and 224 cm2 V-1 s-1, respectively.

  1. Design, fabrication and test of prototype furnace for continuous growth of wide silicon ribbon

    NASA Technical Reports Server (NTRS)

    Duncan, C. S.; Seidensticker, R. G.

    1976-01-01

    A program having the overall objective of growing wide, thin silicon dendritic web crystals quasi-continuously from a semi-automated facility is discussed. The design considerations and fabrication of the facility as well as the test and operation phase are covered; detailed engineering drawings are included as an appendix. During the test and operation phase of the program, more than eighty growth runs and numerous thermal test runs were performed. At the conclusion of the program, 2.4 cm wide web was being grown at thicknesses of 100 to 300 micrometers. As expected, the thickness and growth rate are closely related. Solar cells made from this material were tested at NASA-Lewis and found to have conversion efficiencies comparable to devices fabricated from Czochralski material.

  2. Oxygen and carbon impurities and related defects in silicon

    NASA Technical Reports Server (NTRS)

    Pearce, C. W.

    1985-01-01

    Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

  3. Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices

    NASA Astrophysics Data System (ADS)

    Byrappa, Shayan M.

    Silicon Carbide [SiC] which exists as more than 200 different polytypes is known for superior high temperature and high power applications in comparison to conventional semiconductor materials like Silicon and Germanium. The material finds plethora of applications in a diverse fields due to its unique properties like large energy bandgap, high thermal conductivity and high electric breakdown field. Though inundated with superior properties the potential of this material has not been utilized fully due to impeding factors such as defects especially the crystalline ones which limit their performance greatly. Lots of research has been going on for decades to reduce these defects and there has been subsequent improvement in the quality as the diameter of SiC commercial wafers has reached 150mm from 25mm since its inception. The main focus of this thesis has been to study yield limiting defect structures in conjunction with several leading companies and national labs using advanced characterization tools especially the Synchrotron source. The in depth analysis of SiC has led to development of strategies to reduce or eliminate the density of defects by studying how the defects nucleate, replicate and interact in the material. The strategies discussed to reduce defects were proposed after careful deliberation and analysis of PVT grown bulk crystals and CVD grown epilayers. Following are some of the results of the study: [1] Macrostep overgrowth mechanism in SiC was used to study the deflection of threading defects onto the basal plane resulting in stacking faults. Four types of stacking faults associated with deflection of c/c+a threading defects have been observed to be present in 76mm, 100mm and 150mm diameter wafers. The PVT grown bulk crystals and CVD grown epilayers in study were subjected to contrast studies using synchrotron white beam X-ray topography [SWBXT]. The SWBXT image contrast studies of these stacking faults with comparison of calculated phase shifts for

  4. Focusing of light by negative refraction in a photonic crystal slab superlens on silicon-on-insulator substrate.

    PubMed

    Matsumoto, Takashi; Eom, Kun-Sun; Baba, Toshihiko

    2006-09-15

    We experimentally demonstrate the light focusing by negative refraction in a photonic crystal slab superlens at wavelengths lambda of 1.26-1.42 microm. The photonic crystal slab was fabricated on silicon-on-insulator substrate with an interface structure optimized for low reflection and diffraction losses. The light focusing in the photonic crystal slab was clearly observed through the intentional out-of-plane radiation or scattering of guided light in the slab. The minimum focused spot width was limited to 1.8 microm(1.4 lambda) owing to aberrations. The focusing characteristics were in good agreement with those obtained from photonic band and finite-difference time-domain analyses.

  5. Transmission electron microscopic identification of silicon-containing particles in synovial fluid: potential confusion with calcium pyrophosphate dihydrate and apatite crystals.

    PubMed Central

    Bardin, T; Schumacher, H R; Lansaman, J; Rothfuss, S; Dryll, A

    1984-01-01

    Silicon-containing particles were identified by transmission electron microscopy (TEM) in thin sections of two synovial fluids, which also contained calcium pyrophosphate dihydrate (CPPD) crystals, aspirated during acute attacks of pseudogout. Such particles, which are interpreted as probably being artefacts from glassware, were electron dense and similar in appearance to some CPPD or hydroxyapatite crystals. Images PMID:6476921

  6. Electrostatic shape control of single crystal silicon (SCS), free standing, thin plate deformable mirrors

    NASA Astrophysics Data System (ADS)

    Tidwell, Terry L.

    This research involved the creation and investigation of a low cost design for a MEMS platform capable of controlled shape morphing using very simple mechanical design and manufacturing processes. The platform is made of single crystal silicon and loaded with multiple in-plane forces and moments from three fixed positions on the plate boundary, and with distributed electrostatic forces across the platform surface. This work is important because such a platform could be used as a deformable mirror for adaptive optics systems used in laser communications, vision science, precision beam shaping, and many other important applications. The work involved the development and experimental validation of analytical models that can map the displacement field of a thin flat SCS plate subject to complex loading on the boundary and distributed electrostatic forces. The achievement of these goals included experimentally mapping the platform surface after deformation into three-dimensional geometries defined by the Zernike polynomials. These are relatively large elastic deflections requiring a highly nonlinear analysis. The current analysis applies to circular plates supported on buckled flexures, which have been designed based an model results, fabricated using common microelectronic fabrication processes, and characterized using optical and interference microscopy. Of special interest is the investigation of post-buckling behavior which enhances the range and robustness of operation of the device by providing local upward motion for some modes. The prototypes have been tested and the results compared well with the theoretical results. The first 15 Zernike modes were examined with successful mode shape generation of 13, and fitting errors less than unity were achieved for all 15. From continued analysis of the experimental results the models can be further enhanced to create a commercially viable real time control algorithm for the device.

  7. Experimental measurement of the near tip strain field in an iron-silicon single crystal

    NASA Astrophysics Data System (ADS)

    Shield, T. W.; Kim, K.-S.

    1994-05-01

    EXPERIMENTAL RESULTS are presented for the plastic deformation field near a crack (200 μm wide notch) tip in an iron-3% silicon single crystal. The specimen was loaded in four point bending and the measurements were made at zero load after extensive plastic deformation had occurred. Results are given for a crack on the (011) plane with its tip along the [01|T] direction. The surface deformation field was measured using moire microscopy and a grating on the specimen surface. The in-plane Almansi strain components have been obtained by digitally processing the moire fringes. A well-structured asymptotic field has been found at a distance of 350-500 μm from the notch tip, where the maximum plastic strain is about 9%. The asymptotic field is observed to be composed of many distinct angular sectors. Three (six symmetric) of these sectors are found to have approximately constant strains. In a fourth (two symmetric) sector, the surface strains are approximately 1/ r singular. Between these sectors there are interconnecting transition sectors. The location of the stress state on the yield surface and the active slip systems in each sector are identified by assuming that the plastic strain rates are normal to a Schmid law yield surface. The slip systems identified in this manner show excellent agreement with direct observations of the slip texture on the surface and dislocation etch pits in the interior of the specimen. The experimental strain measurements also show that the constant strain sectors are regions in which unloading occurs. Because of this unloading, the crack tip stress and deformation state is substantially different from an HRR type field which assumes proportional loading. This strong nonproportional loading is thought to be caused by the presence of material anisotropy. The nonproportional loading also provides a large amount of crack tip shielding that is evidence of a toughening mechanism that results from the presence of material anisotropy.

  8. Investigation of the surface of implanted silicon crystal by the contact angle

    SciTech Connect

    Lebedeva, N.N.; Bakovets, V.V.; Sedymova, E.A.; Pridachin, N.B.

    1987-03-01

    The authors study the dependence of the critical contact angle of silicon upon the dose of its irradiation by argon and boron ions. It is established that the system of immiscible liquids ether-water can be successfully used to study the influence of ion implantation of silicon on its wettability by water. The change in the wettability of implanted silicon is related to the increase in the level of the defect state of the layer surface. Wetting of implanted silicon by melts at high temperatures can be used for studying the kinetics and the annealing mechanism of defects.

  9. Broadband single-mode waveguiding in two- and three-dimensional hybrid photonic crystals based on silicon inverse opals.

    PubMed

    Qiu, Gaoxin; Vynck, Kevin; Cassagne, David; Centeno, Emmanuel

    2007-03-19

    Hybrid 2D-3D heterostructures are a very promising way for waveguiding light in 3D photonic structures. Single-mode waveguiding of light has been demonstrated in heterostructures where a 2D photonic crystal consisting of a triangular lattice of silicon rods in air was intercalated between two silicon inverse opals. In this paper, we show that by using a graphite lattice of rods instead of a triangular one, it is possible to enlarge the maximal single-mode waveguiding bandwidth by more than 70 %, i.e. up to 129 nm centered on 1.55 mum. The sensibility to the 2D layer structure parameters is lower, offering enhanced experimental flexibility in the design of the structure.

  10. In vivo silicon-based flexible radio frequency integrated circuits monolithically encapsulated with biocompatible liquid crystal polymers.

    PubMed

    Hwang, Geon-Tae; Im, Donggu; Lee, Sung Eun; Lee, Jooseok; Koo, Min; Park, So Young; Kim, Seungjun; Yang, Kyounghoon; Kim, Sung June; Lee, Kwyro; Lee, Keon Jae

    2013-05-28

    Biointegrated electronics have been investigated for various healthcare applications which can introduce biomedical systems into the human body. Silicon-based semiconductors perform significant roles of nerve stimulation, signal analysis, and wireless communication in implantable electronics. However, the current large-scale integration (LSI) chips have limitations in in vivo devices due to their rigid and bulky properties. This paper describes in vivo ultrathin silicon-based liquid crystal polymer (LCP) monolithically encapsulated flexible radio frequency integrated circuits (RFICs) for medical wireless communication. The mechanical stability of the LCP encapsulation is supported by finite element analysis simulation. In vivo electrical reliability and bioaffinity of the LCP monoencapsulated RFIC devices are confirmed in rats. In vitro accelerated soak tests are performed with Arrhenius method to estimate the lifetime of LCP monoencapsulated RFICs in a live body. The work could provide an approach to flexible LSI in biointegrated electronics such as an artificial retina and wireless body sensor networks.

  11. Coupled fiber taper extraction of 1.53 microm photoluminescence from erbium doped silicon nitride photonic crystal cavities.

    PubMed

    Shambat, Gary; Gong, Yiyang; Lu, Jesse; Yerci, Selçuk; Li, Rui; Dal Negro, Luca; Vucković, Jelena

    2010-03-15

    Optical fiber tapers are used to collect photoluminescence emission at approximately 1.5 microm from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. In the experiment, photoluminescence collection via one arm of the fiber taper is enhanced 2.5 times relative to free space collection, corresponding to a net collection efficiency of 4%. Theoretically, the collection efficiency into one arm of the fiber-taper with this material system and cavity design can be as high as 12.5%, but the degradation of the experimental coupling efficiency relative to this value mainly comes from scattering loss within the short taper transition regions. By varying the fiber taper offset from the cavity, a broad tuning range of coupling strength and collection efficiency is obtained. This material system combined with fiber taper collection is promising for building on-chip optical amplifiers.

  12. Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

    PubMed Central

    Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi

    2012-01-01

    Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation. PMID:22536006

  13. A compact dual-band bandpass filter based on porous silicon dual-microcavity of one-dimensional photonic crystal

    NASA Astrophysics Data System (ADS)

    Ma, Hui; Zhang, Hong-yan

    2015-03-01

    We propose a compact dual-band bandpass filter (BPF) based on one-dimensional porous silicon (PS) photonic crystal by electrochemical etching. By inserting three periods of high and low reflective index layers in the center of porous silicon microcavity (PSM), two sharp resonant peaks appear in the high reflectivity stop band on both sides of the resonance wavelength. Through simulation and experiment, the physical mechanisms of the two resonance peaks and the resonance wavelength are also studied. It is found that the resonance wavelength can be tuned only by adjusting the effective optical thickness (EOT) of each PS layer, in which different resonance wavelengths have different widths between the two sharp resonance peaks. Besides, the analysis indicates that oxidization makes the blue shift become larger for high wavelength than that for low wavelength. Such a fabricated BPF based on PS dual-microcavity is easy to be fabricated and low cost, which benefits the application of integrated optical devices.

  14. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-04-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  15. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-01-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  16. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    SciTech Connect

    Zhang, Xingyu E-mail: swapnajit.chakravarty@omegaoptics.com Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chakravarty, Swapnajit E-mail: swapnajit.chakravarty@omegaoptics.com; Chen, Ray T. E-mail: swapnajit.chakravarty@omegaoptics.com

    2015-11-30

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB.

  17. Effect of Dielectric Titanium, Yttrium, and Silicon Oxide Nanoparticles on Electro-Optical Characteristics of Polymer-Dispersed Liquid Crystals

    NASA Astrophysics Data System (ADS)

    Zhdanov, K. R.; Romanenko, A. I.; Zharkova, G. M.

    2016-01-01

    Electro-optical characteristics of composite polymer-dispersed liquid crystals doped (implanted) with inorganic SiO2, TiO2, and Y2O3 nanoparticles in strong electric fields are studied. The composites were obtained by the method of phase separation of liquid crystals (5CB) and polymer (polyvinyl acetate). It is revealed that implantation of up to 1 wt.% of nanoparticles does not noticeably affect the morphology of the composites. The implanted particles change the mismatch between the refractive indices of the polymer and the liquid crystal, and the strong particle aggregation increases the light scattering that can improve the electrooptical contrast of the composites. Changes of the dielectric permittivity with the field are correlated with the light transmittance. It is found that the yttrium and silicon oxides decrease and the titanium oxides increase the Fredericks threshold field. The titanium oxides and to a greater extent the silicon oxides decrease the dependence of the light transmittance on the changes in the dielectric permittivity.

  18. Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAs

    NASA Technical Reports Server (NTRS)

    Holmes, D. E.; Chen, R. T.; Elliott, K. R.; Kirkpatrick, C. G.

    1982-01-01

    It is shown that the electrical compensation of undoped GaAs grown by the liquid encapsulated Czochralski technique is controlled by the melt stoichiometry. The concentration of the deep donor EL2 in the crystal depends on the As concentration in the melt, increasing from about 5 x 10 to the 15th per cu cm to 1.7 x 10 to the 16th per cu cm as the As atom fraction increases from 0.48 to 0.51. Furthermore, it is shown that the free-carrier concentration of semi-insulating GaAs is determined by the relative concentrations of EL2 and carbon acceptors. As a result, semi-insulating material can be obtained only above a critical As concentration (0.475-atom fraction in the material here) where the concentration of EL2 is sufficient to compensate residual acceptors. Below the critical As concentration the material is p type due to excess acceptors.

  19. Rotationally-driven axisymmetric oscillatory convection in a semitransparent Czochralski melt model

    NASA Astrophysics Data System (ADS)

    Faiez, Reza; Rezaei, Yazdan

    2017-01-01

    A numerical study was carried out to investigate the effect of surface tension-driven convection on the transition of flow modes in an axisymmetric Czochralski oxide melt model. Computational results were obtained over a reasonably wide range of the crystal dummy rotation rate for the cases with and without Marangoni effect. The transition of the flow from steady-state to an axisymmetric oscillatory one was found to be occurred at a threshold value of the ratio between buoyancy and the rotationally-driven forces, which is considerably smaller in the presence of the Marangoni flow. This was shown that, in the presence of thermocapillary forces, the descending cold plume has a larger impact on the thermal field if compared to the case in which the Marangoni effect was ignored. Depending on the circumstances, each of the two different mechanisms, i.e., the rotating Rayleigh-Benard instability and the baroclinic instability, may play a dominant role in the steady-oscillatory flow transition. Thermocapillary effect on the mechanism of instability giving rise to the transition of the convective flow was studied.

  20. Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

    NASA Astrophysics Data System (ADS)

    Intarasiri, S.; Yu, L. D.; Singkarat, S.; Hallén, A.; Lu, J.; Ottosson, M.; Jensen, J.; Possnert, G.

    2007-04-01

    Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C12+ implantation of a p-type (100) Si wafer at a fluence of 6.5×1017 ions/cm2 at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV I127 ions to a very low fluence of 1012 ions/cm2 at temperatures from 80 to 800 °C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.

  1. Czochralski growth of 2 in. Ce-doped (La,Gd)2Si2O7 for scintillator application

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Akira; Shoji, Yasuhiro; Kurosawa, Shunsuke; Chani, Valery I.; Murakami, Rikito; Horiai, Takahiko; Kamada, Kei; Yokota, Yuui; Ohashi, Yuji; Kochurikhin, Vladimir

    2016-10-01

    Growth of 2-in. diameter Ce-doped (La,Gd)2Si2O7 (La-GPS) scintillating crystals by Czochralski method using Ir crucible is reported. The composition of the host material was approximately equal to La0.5Gd1.5Si2O7 and the concentration of the Ce3+-activator was either 0.5 or 1.5 at.% with respect to the total content of the rare-earths forming the host crystal matrix. Effects of the hot zone construction including inductive coil position, presence/absence of the after-heater, rotation rate and other growth parameters on the crystal quality are discussed in some details. The crystals produced in optimized conditions were colorless, transparent, uniform in their shape, crack- and inclusions-free, and demonstrated smooth glass-like surface. The length of the crystals' cylindrically-shaped body parts exceed 100 mm. The growth results were well reproducible. The main disadvantage of the growth process is associated with short lifetime of the Ir crucible and its deformation caused by thermal expansion of the pre-solidified melt at each heating stage.

  2. Photonic crystal slot-microcavity circuit implemented in silicon-on-insulator: High Q operation in solvent without undercutting

    NASA Astrophysics Data System (ADS)

    Hamed Mirsadeghi, S.; Schelew, Ellen; Young, Jeff F.

    2013-04-01

    We report the fabrication and characterization of a silicon-based photonic integrated circuit consisting of a photonic crystal slot-cavity, waveguides, and grating couplers, designed as a robust, easy-to-use device for enhancing light-matter interactions at a precise location inside a fluidic medium, while minimizing fabrication complexity. Measured Q values in excess of 7500 for circuits immersed in hexane and operating near 1.5 μm are obtained, in good agreement with simulations. The detection limit for changes in solvent refractive index unit (RIU) for these structures, which have not been optimized, is 2.3×10-5 RIU.

  3. Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

    PubMed

    Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

    2016-03-01

    We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

  4. Design and analysis of polarization independent all-optical logic gates in silicon-on-insulator photonic crystal

    NASA Astrophysics Data System (ADS)

    Rani, Preeti; Kalra, Yogita; Sinha, R. K.

    2016-09-01

    In this paper, we have reported design and analysis of polarization independent all optical logic gates in silicon-on-insulator photonic crystal consisting of two dimensional honeycomb lattices with two different air holes exhibiting photonic band gap for both TE and TM mode in the optical communication window. The proposed structures perform as an AND optical logic gate and all the optical logic gates based on the phenomenon of interference. The response period and bit rate for TE and TM polarizations at a wavelength of 1.55 μm show improved results as reported earlier.

  5. Adaptive Optics with a Liquid-Crystal-on-Silicon Spatial Light Modulator and Its Behavior in Retinal Imaging

    NASA Astrophysics Data System (ADS)

    Shirai, Tomohiro; Takeno, Kohei; Arimoto, Hidenobu; Furukawa, Hiromitsu

    2009-07-01

    An adaptive optics system with a brand-new device of a liquid-crystal-on-silicon (LCOS) spatial light modulator (SLM) and its behavior in in vivo imaging of the human retina are described. We confirmed by experiments that closed-loop correction of ocular aberrations of the subject's eye was successfully achieved at the rate of 16.7 Hz in our system to obtain a clear retinal image in real time. The result suggests that an LCOS SLM is one of the promising candidates for a wavefront corrector in a prospective commercial ophthalmic instrument with adaptive optics.

  6. Absolute measurements of the densities of silicon crystals in vacuum for a determination of the Avogadro constant

    SciTech Connect

    Fujii, K.; Tanaka, M.; Nezu, Y.

    1994-12-31

    Absolute measurements of the densities of 1-kg single-crystal silicon spheres have been performed for a determination of the Avogadro constant. A scanning type optical interferometer was used to measure the diameters of the spheres in vacuum, and the volumes were obtained by fitting the diameters to a series of spherical harmonics. Thickness of oxide layers on the surfaces of the spheres has been determined by using an ellipsometer to evaluate the effect on the density. Total uncertainties of the densities are estimated to be 0.1 ppm.

  7. Design and Performance Evaluation of Optical Ethernet Switching Architecture with Liquid Crystal on Silicon-Based Beam-Steering Technology

    NASA Astrophysics Data System (ADS)

    Cheng, Yuh-Jiuh; Chou, H.-H.; Shiau, Yhi; Cheng, Shu-Ying

    2016-07-01

    A non-blocking optical Ethernet switching architecture with liquid crystal on a silicon-based beam-steering switch and optical output buffer strategies are proposed. For preserving service packet sequencing and fairness of routing sequence, priority and round-robin algorithms are adopted at the optical output buffer in this research. Four methods were used to implement tunable fiber delay modules for the optical output buffers to handle Ethernet packets with variable bit-rates. The results reported are based on the simulations performed to evaluate the proposed switching architecture with traffic analysis under a traffic model captured from a real-core network.

  8. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Technical Reports Server (NTRS)

    Larkin, David J. (Inventor); Powell, J. Anthony (Inventor)

    1992-01-01

    A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  9. Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony (Inventor)

    1991-01-01

    This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

  10. Optical bistability in a silicon nitride microring resonator with azo dye-doped liquid crystal as cladding material.

    PubMed

    Wang, Chun-Ta; Tseng, Chih-Wei; Yu, Jui-Hao; Li, Yuan-Cheng; Lee, Chun-Hong; Jau, Hung-Chang; Lee, Ming-Chang; Chen, Yung-Jui; Lin, Tsung-Hsien

    2013-05-06

    This investigation reports observations of optical bistability in a silicon nitride (SiN) micro-ring resonator with azo dye-doped liquid crystal cladding. The refractive index of the cladding can be changed by switching the liquid crystal between nematic (NLC) and photo-induced isotropic (PHI) states by. Both the NLC and the PHI states can be maintained for many hours, and can be rapidly switched from one state to the other by photo-induced isomerization using 532 nm and 408 nm addressing light, respectively. The proposed device exhibits optical bistable switching of the resonance wavelength without sustained use of a power source. It has a 1.9 nm maximum spectral shift with a Q-factor of over 10000. The hybrid SiN- LC micro-ring resonator possesses easy switching, long memory, and low power consumption. It therefore has the potential to be used in signal processing elements and switching elements in optically integrated circuits.

  11. Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast

    NASA Astrophysics Data System (ADS)

    Argunova, T. S.; Kohn, V. G.; Lim, J. H.; Je, J. H.

    2016-11-01

    The morphology of a macrodefect in a single-crystal silicon carbide wafer has been investigated by the computer simulation of an experimental X-ray phase-contrast image. A micropipe, i.e., a long cavity with a small (elliptical in the general case) cross section, in a single crystal has been considered as a macrodefect. A far-field image of micropipe has been measured with the aid of synchrotron radiation without a monochromator. The parameters of micropipe elliptical cross section are determined based on one projection in two directions: parallel and perpendicular to the X-ray beam propagation direction, when scanning along the pipe axis. The results demonstrate the efficiency of the phase contrast method supplemented with computer simulation for studying such macrodefects when the defect position in the sample volume is unknown beforehand.

  12. Two-axis MEMS scanner with transfer-printed high-reflectivity, broadband monolithic silicon photonic crystal mirrors.

    PubMed

    Jeong, Jae-Woong; Park, Bryan; Keum, Hohyun; Kim, Seok; Rogers, John A; Solgaard, Olav

    2013-06-03

    We present a two-axis electrostatic MEMS scanner with high-reflectivity monolithic single-crystal-silicon photonic crystal (PC) mirrors suitable for applications in harsh environments. The reflective surfaces of the MEMS scanner are transfer-printed PC mirrors with low polarization dependence, low angular dependence, and reflectivity over 85% in the wavelength range of 1490nm~1505nm and above 90% over the wavelength band of 1550~1570nm. In static mode, the scanner has total scan range of 10.2° on one rotation axis and 7.8° on the other. Dynamic operation on resonance increase the scan range to 21° at 608Hz around the outer rotation axis and 9.5° at 1.73kHz about the inner rotation axis.

  13. Heterojunction solar cells based on single-crystal silicon with an inkjet-printed contact grid

    NASA Astrophysics Data System (ADS)

    Abolmasov, S. N.; Abramov, A. S.; Ivanov, G. A.; Terukov, E. I.; Emtsev, K. V.; Nyapshaev, I. A.; Bazeley, A. A.; Gubin, S. P.; Kornilov, D. Yu.; Tkachev, S. V.; Kim, V. P.; Ryndin, D. A.; Levchenkova, V. I.

    2017-01-01

    Results on the creation of a current-collecting grid for heterojunction silicon solar cells by ink-jet printing are presented. Characteristics of the obtained solar cells are compared with those of the samples obtained using standard screen printing.

  14. Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

    NASA Technical Reports Server (NTRS)

    Yoo, H. I.; Iles, P. A.; Tanner, D. P.

    1979-01-01

    Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

  15. Experimental investigation of energy localization in line-defect resonator based on silicon locally resonant phononic crystal

    NASA Astrophysics Data System (ADS)

    Jiang, Wanli; Feng, Duan; Xu, Dehui; Xiong, Bin; Wang, Yuelin

    2016-10-01

    In this paper, energy localization in line-defect resonator based on locally resonant phononic crystal (PnC) is experimentally studied. The defected resonator is realized by creating line defects on a two-dimension (2-D) silicon PnC. The silicon resonator was fabricated by micro machining process and tested by a combination of the fluid coupling method and Laser Doppler Vibrometer (LDV). Acoustic waves with frequency range from 7.19 MHz to 7.50 MHz are trapped in the cavity, and the corresponding resonant modes are observed in-situ. The measured quality (Q) factor of the resonator, which is 427 at its resonant frequency of 7.3 MHz, is smaller than the simulated ones (666 and 5135). The experimental results agree well with the simulation results that frequencies of the trapped acoustic waves of are mostly in the range of the phononic bandgaps. The locally resonant based PnC resonator in paper with 17 dB magnitude amplification, which is normalized with respect to the transmission of a freestanding silicon slab in the same frequency range, has great potential in energy harvesting or sound concentration.

  16. Single crystal silicon filaments fabricated in SOI: A potential IR source for a microfabricated photometric CO2 sensor

    NASA Technical Reports Server (NTRS)

    Tu, Juliana; Smith, Rosemary L.

    1995-01-01

    The objective of this project was to design, fabricate, and test single crystal silicon filaments as potential black body IR sources for a spectrophotometric CO2 sensing microsystem. The design and fabrication of the silicon-on-insulator (SOI) filaments are summarized and figures showing the composite layout of the filament die (which contains four filaments of different lengths -- 500 microns, 1 mm, 1.5 mm and 2 mm -- and equal widths of 15 microns) are presented. The composite includes four mask layers: (1) silicon - defines the filament dimensions and contact pads; (2) release pit - defines the oxide removed from under the filament and hence, the length of the released filament; (3) Pyrex pit - defines the pit etched in the Pyrex cap (not used); and (4) metal - defines a metal pattern on the contact pads or used as a contact hole etch. I/V characteristics testing of the fabricated SOI filaments is described along with the nitride-coating procedures carried out to prevent oxidation and resistance instability.

  17. Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

    NASA Astrophysics Data System (ADS)

    Hwang, Ji-Hyun; Kwak, Hyunmin; Kwon, Myeung Hoi

    2014-03-01

    Aluminum-induced crystallization (AIC) of amorphous silicon with an Al2O3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al2O3 layer was deposited between the a-Si and the Al films (a-Si/Al2O3/Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the Si and the Al layers. During the annealing process, small grain Si x Al seeds were formed at the channels. Then, the Al2O3 diffusion barrier was restructured to close the channels and prevent further diffusion of Al atoms into the a-Si layer. A polycrystalline Si film with (111), (220) and (311) crystallization peaks in the X-ray diffraction pattern was formed by annealing at 560 °C in a conventional furnace. That film showed a p-type semiconducting behavior with good crystallinity and a large grain size of up to 14.8 µm. No layer conversion occurred between the Si and the Al layers, which had been the fundamental obstacle to the applications in the crystallization of a-Si films by using the AIC method.

  18. Direct detection of transcription factors in cotyledons during seedling development using sensitive silicon-substrate photonic crystal protein arrays.

    PubMed

    Jones, Sarah I; Tan, Yafang; Shamimuzzaman, Md; George, Sherine; Cunningham, Brian T; Vodkin, Lila

    2015-03-01

    Transcription factors control important gene networks, altering the expression of a wide variety of genes, including those of agronomic importance, despite often being expressed at low levels. Detecting transcription factor proteins is difficult, because current high-throughput methods may not be sensitive enough. One-dimensional, silicon-substrate photonic crystal (PC) arrays provide an alternative substrate for printing multiplexed protein microarrays that have greater sensitivity through an increased signal-to-noise ratio of the fluorescent signal compared with performing the same assay upon a traditional aminosilanized glass surface. As a model system to test proof of concept of the silicon-substrate PC arrays to directly detect rare proteins in crude plant extracts, we selected representatives of four different transcription factor families (zinc finger GATA, basic helix-loop-helix, BTF3/NAC [for basic transcription factor of the NAC family], and YABBY) that have increasing transcript levels during the stages of seedling cotyledon development. Antibodies to synthetic peptides representing the transcription factors were printed on both glass slides and silicon-substrate PC slides along with antibodies to abundant cotyledon proteins, seed lectin, and Kunitz trypsin inhibitor. The silicon-substrate PC arrays proved more sensitive than those performed on glass slides, detecting rare proteins that were below background on the glass slides. The zinc finger transcription factor was detected on the PC arrays in crude extracts of all stages of the seedling cotyledons, whereas YABBY seemed to be at the lower limit of their sensitivity. Interestingly, the basic helix-loop-helix and NAC proteins showed developmental profiles consistent with their transcript patterns, indicating proof of concept for detecting these low-abundance proteins in crude extracts.

  19. Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres

    NASA Astrophysics Data System (ADS)

    Blanco, Alvaro; Chomski, Emmanuel; Grabtchak, Serguei; Ibisate, Marta; John, Sajeev; Leonard, Stephen W.; Lopez, Cefe; Meseguer, Francisco; Miguez, Hernan; Mondia, Jessica P.; Ozin, Geoffrey A.; Toader, Ovidiu; van Driel, Henry M.

    2000-05-01

    Photonic technology, using light instead of electrons as the information carrier, is increasingly replacing electronics in communication and information management systems. Microscopic light manipulation, for this purpose, is achievable through photonic bandgap materials, a special class of photonic crystals in which three-dimensional, periodic dielectric constant variations controllably prohibit electromagnetic propagation throughout a specified frequency band. This can result in the localization of photons, thus providing a mechanism for controlling and inhibiting spontaneous light emission that can be exploited for photonic device fabrication. In fact, carefully engineered line defects could act as waveguides connecting photonic devices in all-optical microchips, and infiltration of the photonic material with suitable liquid crystals might produce photonic bandgap structures (and hence light-flow patterns) fully tunable by an externally applied voltage. However, the realization of this technology requires a strategy for the efficient synthesis of high-quality, large-scale photonic crystals with photonic bandgaps at micrometre and sub-micrometre wavelengths, and with rationally designed line and point defects for optical circuitry. Here we describe single crystals of silicon inverse opal with a complete three-dimensional photonic bandgap centred on 1.46µm, produced by growing silicon inside the voids of an opal template of close-packed silica spheres that are connected by small `necks' formed during sintering, followed by removal of the silica template. The synthesis method is simple and inexpensive, yielding photonic crystals of pure silicon that are easily integrated with existing silicon-based microelectronics.

  20. Crucible-free pulling of germanium crystals

    NASA Astrophysics Data System (ADS)

    Wünscher, Michael; Lüdge, Anke; Riemann, Helge

    2011-03-01

    Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal and floating zone (FZ) methods, which are widely used for silicon growth, are hardly known to be investigated for germanium. The germanium melt is more than twice as dense as liquid silicon, which could destabilize a floating zone. Additionally, the lower melting point and the related lower radiative heat loss is shown to reduce the stability especially of the FZ process with the consequence of a screw-like crystal growth. We found that the lower heat radiation of Ge can be compensated by the increased convective cooling of a helium atmosphere instead of the argon ambient. Under these conditions, the screw-like growth could be avoided. Unfortunately, the helium cooling deteriorates the melting behavior of the feed rod. Spikes appear along the open melt front, which touch on the induction coil. In order to improve the melting behavior, we used a lamp as a second energy source as well as a mixture of Ar and He. With this, we found a final solution for growing stable crystals from germanium by using both gases in different parts of the furnace. The experimental work is accompanied by the simulation of the stationary temperature field. The commercially available software FEMAG-FZ is used for axisymmetric calculations. Another tool for process development is the lateral photo-voltage scanning (LPS), which can determine the shape of the solid-liquid phase boundary by analyzing the growth striations in a lateral cut of a grown crystal. In addition to improvements of the process, these measurements can be compared with the calculated results and, hence, conduce to validate the calculation.

  1. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  2. Growth mechanism of carbon nanotubes: a nano Czochralski model

    PubMed Central

    2012-01-01

    Carbon nanotubes (CNTs) have been under intense investigations during the past two decades due to their unique physical and chemical properties; however, there is still no commonly accepted growth mechanism to describe the growth behavior of CNTs. Here, we propose a nano Czochralski (CZ) model which regards the catalytic growth of a CNT as a CZ process taking place on the nano scale. The main idea is that, during the CNT growth, each catalyst particle acts as a nano crucible to nucleate and maintain the CNT growth, and the extruding CNT rotates relative to the nano crucible, leading to a chirality-dependent growth rate. In this case, the structural quality gradually changes along the CNT due to the dynamic generation-reconstruction-diffusion of defects during the CNT growth. The nano CZ mechanism may also apply to the catalytic growth of many other one-dimensional (1D) nanostructures (including various nanotubes and nanowires), thus further efforts will be stimulated in the quality and property control, as well as application explorations of these 1D nanomaterials. PMID:22747835

  3. Optimizing seeded casting of mono-like silicon crystals through numerical simulation

    NASA Astrophysics Data System (ADS)

    Black, Andrés; Medina, Juan; Piñeiro, Axa; Dieguez, Ernesto

    2012-08-01

    Recently, silicon ingots produced by typical multicrystalline casting systems but having monocrystalline features are entering the photovoltaic market. In order to look into the particular properties of this novel method, the normal silicon casting process is numerically simulated, and compared to an optimized mono-like casting process, based on the use of oriented monocrystalline silicon seeds. The seeding process was optimized by reducing the time spent in the melt in order to reduce the back diffusion of harmful non-feedstock metal impurities such as iron, reducing the thermomechanical stress to avoid dislocation multiplication, and decreasing the overall interface curvature. Additionally, the growth conditions in the zone just above the seeds were fine-tuned to increase the production of vacancy point defects, in the hope of achieving "vacancy passivation" of harmful interstitial iron by moving it to substitutional position.

  4. Monolithic LaBr3:Ce crystals on silicon photomultiplier arrays for time-of-flight positron emission tomography

    NASA Astrophysics Data System (ADS)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Löhner, Herbert; Schaart, Dennis R.

    2012-04-01

    Positron emission tomography detectors based on monolithic scintillation crystals exhibit good spatial and energy resolution, intrinsically provide depth-of-interaction information, have high γ-photon capture efficiency, and may reduce the manufacturing costs compared to pixelated crystal arrays. Here, we present the characterization of a detector consisting of a 18.0 mm×16.2 mm×10.0 mm monolithic LaBr3:5%Ce scintillator directly coupled to a 4×4 array of silicon photomultipliers. An energy resolution of 6.4% full-width-at-half-maximum (FWHM) was obtained. The point-spread-function (PSF) was determined for different regions of the detector. The full-width-at-half-maximum (FWHM) of the PSF was measured to be <1.5 mm at the center of the detector and <1.7 mm averaged over the entire crystal. Both values are not corrected for the ∼0.6 mm FWHM test beam diameter. Furthermore, the influence of edge effects was investigated. We found that near the edges of the detector the spatial resolution degrades to 2.2 mm (FWHM), and a bias in the position estimates, up to 1.5 mm, was observed. Moreover, the coincidence resolving time for two identical detectors in coincidence was measured to be as small as ∼198 ps FWHM.

  5. Monolithic LaBr₃:Ce crystals on silicon photomultiplier arrays for time-of-flight positron emission tomography.

    PubMed

    Seifert, Stefan; van Dam, Herman T; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Löhner, Herbert; Schaart, Dennis R

    2012-04-21

    Positron emission tomography detectors based on monolithic scintillation crystals exhibit good spatial and energy resolution, intrinsically provide depth-of-interaction information, have high γ-photon capture efficiency, and may reduce the manufacturing costs compared to pixelated crystal arrays. Here, we present the characterization of a detector consisting of a 18.0 mm×16.2 mm×10.0 mm monolithic LaBr₃:5%Ce scintillator directly coupled to a 4×4 array of silicon photomultipliers. An energy resolution of 6.4% full-width-at-half-maximum (FWHM) was obtained. The point-spread-function (PSF) was determined for different regions of the detector. The full-width-at-half-maximum (FWHM) of the PSF was measured to be <1.5 mm at the center of the detector and <1.7 mm averaged over the entire crystal. Both values are not corrected for the ~0.6 mm FWHM test beam diameter. Furthermore, the influence of edge effects was investigated. We found that near the edges of the detector the spatial resolution degrades to 2.2 mm (FWHM), and a bias in the position estimates, up to 1.5 mm, was observed. Moreover, the coincidence resolving time for two identical detectors in coincidence was measured to be as small as ~198 ps FWHM.

  6. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  7. Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template

    NASA Astrophysics Data System (ADS)

    Shimizu, Tomohiro; Inoue, Fumihiro; Wang, Chonge; Otsuka, Shintaro; Tada, Yoshihiro; Koto, Makoto; Shingubara, Shoso

    2013-06-01

    The control of the crystal orientation and diameter of vertically grown epitaxial Si nanowires was demonstrated using a combination of a vapor-liquid-solid (VLS) growth technique and the use of an anodic aluminum oxide (AAO) template on a single-crystal Si substrate. The [100], [110], and [111] nanowires were selectively obtained by choosing the Si substrate with appropriate crystal orientation. The diameter of a Si nanowire in the AAO template could be controlled by the modification of the pore size of the AAO template with anodic voltage during anodization.

  8. Time fluctuations of the phase modulation in a liquid crystal on silicon display: characterization and effects in diffractive optics.

    PubMed

    Moreno, I; Lizana, A; Márquez, A; Iemmi, C; Fernández, E; Campos, J; Yzuel, M J

    2008-10-13

    In this paper we provide evidence of the temporal fluctuations of the phase modulation property of a liquid crystal on silicon (LCoS) display, and we analyze its effect when the device is used for displaying a diffractive optical element. We use a commercial twisted nematic LCoS display configured to produce a phase-only modulation, and we provide time resolved measurements of the diffraction efficiency that show rapid fluctuations of the phase modulation, in the millisecond order. We analyze how these fluctuations have to be considered in two typical methods for the characterization of the phase modulation: two beam interference and diffraction from a binary grating. We finally provide experimental results on the use of this device for displaying a computer generated hologram. A reduction of the modulation diffraction efficiency results from the phase modulation fluctuation.

  9. Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

    NASA Astrophysics Data System (ADS)

    Mohamed, Mohamed Sabry; Simbula, Angelica; Carlin, Jean-François; Minkov, Momchil; Gerace, Dario; Savona, Vincenzo; Grandjean, Nicolas; Galli, Matteo; Houdré, Romuald

    2017-03-01

    We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4 × 104, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving a normalized conversion efficiency of 2.4 × 10-3 W-1, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

  10. Demonstration of channelized tunable optical dispersion compensator based on arrayed-waveguide grating and liquid crystal on silicon.

    PubMed

    Seno, Kazunori; Suzuki, Kenya; Ooba, Naoki; Watanabe, Kei; Ishii, Motohaya; Ono, Hirotaka; Mino, Shinji

    2010-08-30

    We propose and demonstrate a multi-channel tunable optical dispersion compensator (TODC) that consists of an arrayed-waveguide grating (AWG) and liquid crystal on silicon (LCOS). By utilizing the AWG with a large angular dispersion and the LCOS with a flexible phase setting, we can construct a compact and flexible TODC that has a wide tuning range of chromatic dispersion. We confirmed experimentally that the TODC could realize channel-by-channel CD compensation for six WDM channels with a ± 800 ps/nm range and a 3 dB bandwidth of 24 GHz. We believe that the multi-channel operation of this TODC will help to reduce the cost and power consumption of high-speed optical transmission systems.

  11. See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics

    SciTech Connect

    Yang, Yang; O’Brien, Paul G.; Ozin, Geoffrey A. E-mail: kherani@ecf.utoronto.ca; Kherani, Nazir P. E-mail: kherani@ecf.utoronto.ca

    2013-11-25

    Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135 nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295 W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

  12. <100>-textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

    SciTech Connect

    He Ming; Ishihara, Ryoichi; Metselaar, Wim; Beenakker, Kees

    2006-10-15

    Strong preference for <100> surface and in-plane orientations has been observed in polycrystalline silicon film on SiO{sub 2} after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grains. The clear texture can be observed in a relatively wide energy density window, from 250 to 275 mJ/cm{sup 2}, for a 30 nm thick {alpha}-Si layer. It is speculated that the lateral growth velocity of <100>-oriented grains is the fastest, and the orthogonal in-plane <100> directions are developed due to the alternate directions of melting and solidification during the LIPSS formation.

  13. Enhanced four-wave-mixing effects by large group indices of one-dimensional silicon photonic crystal waveguides.

    PubMed

    Kim, Dong Wook; Kim, Seung Hwan; Lee, Seoung Hun; Jong, Heung Sun; Lee, Jong-Moo; Lee, El-Hang; Kim, Kyong Hon

    2013-12-02

    Enhanced four-wave-mixing (FWM) effects have been observed with the help of large group-indices near the band edges in one-dimensional (1-D) silicon photonic crystal waveguides (Si PhCWs). A significant increase of the FWM conversion efficiency of about 17 dB was measured near the transmission band edge of the 1-D PhCW through an approximate 3.2 times increase of the group index from 8 to 24 with respect to the central transmission band region despite a large group-velocity dispersion. Numerical analyses based on the coupled-mode equations for the degenerated FWM process describe the experimentally measured results well. Our results indicate that the 1-D PhCWs are good candidates for large group-index enhanced nonlinearity devices even without having any special dispersion engineering.

  14. Characterization of a parallel aligned liquid crystal on silicon and its application on a Shack-Hartmann sensor

    NASA Astrophysics Data System (ADS)

    Lobato, L.; Márquez, A.; Lizana, A.; Moreno, I.; Iemmi, C.; Campos, J.

    2010-08-01

    In this paper, the characterization and the optimization of a parallel aligned (PA) liquid crystal on silicon display (LCoS) has been conducted with the aim to apply it to the generation of a microlenses array in a Shack-Hartmann (SH) sensor. The entire sensor setup has been experimentally implemented from scratch. Results obtained for several aberrated wavefront measurements show the suitability of these devices in this particular application. Due to the well-known dynamic properties of LCoS, these devices allow for an easy choice of the parameters of the SH sensor, i.e. the selection of the suitable focal length and aperture of the microlenses of the array, which will definitely determine the dynamic range and the lateral resolution of the SH sensor.

  15. High purity, low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1983-01-01

    Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

  16. Bragg x-ray ptychography of a silicon crystal: Visualization of the dislocation strain field and the production of a vortex beam

    NASA Astrophysics Data System (ADS)

    Takahashi, Yukio; Suzuki, Akihiro; Furutaku, Shin; Yamauchi, Kazuto; Kohmura, Yoshiki; Ishikawa, Tetsuya

    2013-03-01

    We experimentally demonstrate the visualization of nanoscale dislocation strain fields in a thick silicon single crystal by a coherent diffraction imaging technique called Bragg x-ray ptychography. We also propose that the x-ray microbeam carrying orbital angular momentum is selectively produced by coherent Bragg diffraction from dislocation singularities in crystals. This work not only provides us with a tool for characterizing dislocation strain fields buried within extended crystals but also opens up new scientific opportunities in femtosecond spectroscopy using x-ray free-electron lasers.

  17. Quasi-periodic Fibonacci and periodic one-dimensional hypersonic phononic crystals of porous silicon: Experiment and simulation

    NASA Astrophysics Data System (ADS)

    Aliev, Gazi N.; Goller, Bernhard

    2014-09-01

    A one-dimensional Fibonacci phononic crystal and a distributed Bragg reflector were constructed from porous silicon. The structures had the same number of layers and similar acoustic impedance mismatch, and were electrochemically etched in highly boron doped silicon wafers. The thickness of the individual layers in the stacks was approximately 2 μm. Both types of hypersonic band gap structure were studied by direct measurement of the transmittance of longitudinal acoustic waves in the 0.1-2.6 GHz range. Acoustic band gaps deeper than 50 dB were detected in both structures. The experimental results were compared with model calculations employing the transfer matrix method. The acoustic properties of periodic and quasi-periodic structures in which half-wave retarding bi-layers do not consist of two quarter-wave retarding layers are discussed. The strong correlation between width and depth of gaps in the transmission spectra is demonstrated. The dominant mechanisms of acoustic losses in porous multilayer structures are discussed. The elastic constants remain proportional over our range of porosity, and hence, the Grüneisen parameter is constant. This simplifies the expression for the porosity dependence of the Akhiezer damping.

  18. Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy.

    PubMed

    Shakoor, Abdul; Nozaki, Kengo; Kuramochi, Eiichi; Nishiguchi, Katsuhiko; Shinya, Akihiko; Notomi, Masaya

    2014-11-17

    We demonstrate a small foot print (600 nm wide) 1D silicon photonic crystal electro-optic modulator operating with only a 50 mV swing voltage and 0.1 fJ/bit switching energy at GHz speeds, which are the lowest values ever reported for a silicon electro-optic modulator. A 3 dB extinction ratio is demonstrated with an ultra-low 50 mV swing voltage with a total device energy consumption of 42.8 fJ/bit, which is dominated by the state holding energy. The total energy consumption is reduced to 14.65 fJ/bit for a 300 mV swing voltage while still keeping the switching energy at less than 2 fJ/bit. Under optimum voltage conditions, the device operates with a maximum speed of 3 Gbps with 8 dB extinction ratio, which rises to 11 dB for a 1 Gbps modulation speed.

  19. X-ray photoelectron spectroscopy analysis of boron defects in silicon crystal: A first-principles study

    NASA Astrophysics Data System (ADS)

    Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji

    2016-05-01

    We carried out a comprehensive study on the B 1s core-level X-ray photoelectron spectroscopy (XPS) binding energies and formation energies for boron defects in crystalline silicon by first-principles calculation with careful evaluation of the local potential boundary condition for the model system using the supercell corresponding to 1000 Si atoms. It is reconfirmed that the cubo-octahedral B12 cluster in silicon crystal is unstable and exists at the saddle point decaying to the icosahedral and S4 B12 clusters. The electrically active clusters without any postannealing of ion-implanted Si are identified as icosahedral B12 clusters. The experimentally proposed threefold coordinated B is also identified as a ⟨ 001 ⟩ B - Si defect. For an as-doped sample prepared by plasma doping, the calculated XPS spectra for complexes consisting of vacancies and substitutional B atoms are consistent with the experimental spectra. It is proposed that, assuming that the XPS peak at 187.1 eV is due to substitutional B (Bs), the experimental XPS peaks at 187.9 and 186.7 eV correspond to interstitial B at the H-site and ⟨ 001 ⟩ B - Si defects, respectively. In the annealed samples, the complex of Bs and interstitial Si near the T-site is proposed as a candidate for the experimental XPS peak at 188.3 eV.

  20. Effect of heat treatment on phase composition and crystal structure of thin WSi2 films on silicon substrates

    NASA Astrophysics Data System (ADS)

    Biryukov, Y. P.; Dostanko, A. P.; Maltsev, A. A.; Shakhlevich, G. M.

    1984-10-01

    An experimental study of WSi2 films on silicon substrates with either 111 or 100 orientation was made, for the purpose of determining the effect of annealing by heat treatment on their phase composition and crystal structure. Films of 0.2 micron thickness were deposited at a rate of 0.5 nm/s on a silicon surface which was predecontaminated of SiO2 layers and adsorbate atoms by ion sputtering in one vacuum cycle. Deposition was by condensation, with the substrate held at various temperatures from 390 to 500 C, and then annealed in an argon atmosphere at various temperatures from 700 to 1000 C for 30 min. Subsequent phase analysis at room temperature was performed with a DRON-2 X-ray diffractometer, using a CuK (sub alpha)-radiation source and covering the 20 = 10 to 130 deg range of angles by the Debye-Sherer method, while the surface morphology was examined under an electron microscope.