dc current bias: Topics by Science.gov

Sample records for dc current bias

Analysis and Countermeasure Study on DC Bias of Main Transformer in a City

NASA Astrophysics Data System (ADS)

Wang, PengChao; Wang, Hongtao; Song, Xinpu; Gu, Jun; Liu, yong; Wu, weili

2017-07-01

According to the December 2015 Guohua Beijing thermal power transformer DC magnetic bias phenomenon, the monitoring data of 24 hours of direct current is analyzed. We find that the maximum DC current is up to 25 and is about 30s for the trend cycle, on this basis, then, of the geomagnetic storm HVDC and subway operation causes comparison of the mechanism, and make a comprehensive analysis of the thermal power plant’s geographical location, surrounding environment and electrical contact etc.. The results show that the main reason for the DC bias of Guohua thermal power transformer is the operation of the subway, and the change of the DC bias current is periodic. Finally, of Guohua thermal power transformer DC magnetic bias control method is studied, the simulation results show that the method of using neutral point with small resistance or capacitance can effectively inhibit the main transformer neutral point current.
Analysis of asymmetric property with DC bias current on thin-film magnetoimpedance element

NASA Astrophysics Data System (ADS)

Kikuchi, Hiroaki; Sumida, Chihiro

2018-05-01

We theoretically analyzed the magnetoimpedance profile of a thin-film element with a DC bias current using the bias susceptibility theory and Maxwell's equations. Although the analysis model predicts that an element with a rectangular cross section shows symmetric impedance property with respect to the Z-axis with DC bias current, the experimental results showed asymmetric properties. Taking the shape imbalance and trapezoidal cross section of the element into account, we explained the asymmetric impedance properties qualitatively.
Experimental Investigation of DC-Bias Related Core Losses in a Boost Inductor (Postprint)

DTIC Science & Technology

2014-08-01

dc bias-flux conditions. These dc bias conditions result in distorted hysteresis loops , increased core losses, and have been shown to be independent...These dc bias conditions result in dis- torted hysteresis loops , increased core losses, and have been shown to be independent of core material. The...controllable converter load currents, this topology is ideal to study dc-related losses. Inductor core hysteresis loop characterization was accomplished
B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system.

PubMed

Liu, Han-Chun; Reichl, C; Wegscheider, W; Mani, R G

2018-05-18

We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid helium temperatures. The Hall resistance oscillations and plateaus appear together with concomitant oscillations also in the diagonal magnetoresistance. The periods of Hall and diagonal resistance oscillations are nearly identical, and source power (P) dependent measurements demonstrate sub-linear relationship of the oscillation amplitude with P over the span 0 < P ≤ 20 mW.
Effects of DC bias on magnetic performance of high grades grain-oriented silicon steels

NASA Astrophysics Data System (ADS)

Ma, Guang; Cheng, Ling; Lu, Licheng; Yang, Fuyao; Chen, Xin; Zhu, Chengzhi

2017-03-01

When high voltage direct current (HVDC) transmission adopting mono-polar ground return operation mode or unbalanced bipolar operation mode, the invasion of DC current into neutral point of alternating current (AC) transformer will cause core saturation, temperature increasing, and vibration acceleration. Based on the MPG-200D soft magnetic measurement system, the influence of DC bias on magnetic performance of 0.23 mm and 0.27 mm series (P1.7=0.70-1.05 W/kg, B8>1.89 T) grain-oriented (GO) silicon steels under condition of AC / DC hybrid excitation were systematically realized in this paper. For the high magnetic induction GO steels (core losses are the same), greater thickness can lead to stronger ability of resisting DC bias, and the reasons for it were analyzed. Finally, the magnetostriction and A-weighted magnetostriction velocity level of GO steel under DC biased magnetization were researched.
Applications of DC-Self Bias in CCP Deposition Systems

NASA Astrophysics Data System (ADS)

Keil, D. L.; Augustyniak, E.; Sakiyama, Y.

2013-09-01

In many commercial CCP plasma process systems the DC-self bias is available as a reported process parameter. Since commercial systems typically limit the number of onboard diagnostics, there is great incentive to understand how DC-self bias can be expected to respond to various system perturbations. This work reviews and examines DC self bias changes in response to tool aging, chamber film accumulation and wafer processing. The diagnostic value of the DC self bias response to transient and various steady state current draw schemes are examined. Theoretical models and measured experimental results are compared and contrasted.
Strong mechanically induced effects in DC current-biased suspended Josephson junctions

NASA Astrophysics Data System (ADS)

McDermott, Thomas; Deng, Hai-Yao; Isacsson, Andreas; Mariani, Eros

2018-01-01

Superconductivity is a result of quantum coherence at macroscopic scales. Two superconductors separated by a metallic or insulating weak link exhibit the AC Josephson effect: the conversion of a DC voltage bias into an AC supercurrent. This current may be used to activate mechanical oscillations in a suspended weak link. As the DC-voltage bias condition is remarkably difficult to achieve in experiments, here we analyze theoretically how the Josephson effect can be exploited to activate and detect mechanical oscillations in the experimentally relevant condition with purely DC current bias. We unveil how changing the strength of the electromechanical coupling results in two qualitatively different regimes showing dramatic effects of the oscillations on the DC-voltage characteristic of the device. These include the appearance of Shapiro-type plateaus for weak coupling and a sudden mechanically induced retrapping for strong coupling. Our predictions, measurable in state-of-the-art experimental setups, allow the determination of the frequency and quality factor of the resonator using DC only techniques.
Hybrid radio-frequency/direct-current plasma-enhanced chemical vapor deposition system for deposition on inner surfaces of polyethylene terephthalate bottles

NASA Astrophysics Data System (ADS)

Li, Jing; Tian, Xiubo; Gong, Chunzhi; Yang, Shiqin; Fu, Ricky K. Y.; Chu, Paul K.

2009-12-01

A hybrid radio-frequency (rf)/direct-current (dc) system has been developed to control the biasing effects during deposition of diamondlike carbon (DLC) films onto the inner wall of polyethylene terephthalate (PET) bottles. An additional dc bias is coupled to the rf electrode to produce the effect of equivalent rf self-biasing. This allows more flexible control of the deposition of the DLC films which are intended to improve the gas barrier characteristics. The experimental results demonstrate that the additional dc bias improves the adhesion strength between the DLC film and PET, although the enhancement in the gas barrier properties is not significantly larger compared to the one without dc bias. The apparatus and methodology have practical importance in the food and beverage industry.
DC bias effect on alternating current electrical conductivity of poly(ethylene terephthalate)/alumina nanocomposites

NASA Astrophysics Data System (ADS)

Nikam, Pravin N.; Deshpande, Vineeta D.

2016-05-01

Polymer nanocomposites based on metal oxide (ceramic) nanoparticles are a new class of materials with unique properties and designed for various applications such as electronic device packaging, insulation, fabrication and automotive industries. Poly(ethylene terephthalate) (PET)/alumina (Al2O3) nanocomposites with filler content between 1 wt% and 5 wt% were prepared by melt compounding method using co-rotating twin screw extruder and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and precision LCR meter techniques. The results revealed that proper uniform dispersion at lower content up to 2 wt% of nano-alumina observed by using TEM. Aggregation of nanoparticles was observed at higher content of alumina examined by using SEM and TEM. The frequency dependences of the alternating current (AC) conductivity (σAC) of PET/alumina nanocomposites on the filler content and DC bias were investigated in the frequency range of 20Hz - 1MHz. The results showed that the AC and direct current (DC) conductivity increases with increasing DC bias and nano-alumina content upto 3 wt%. It follows the Jonscher's universal power law of solids. It revealed that σAC of PET/alumina nanocomposites can be well characterized by the DC conductivity (σDC), critical frequency (ωc), critical exponent of the power law (s). Roll of DC bias potential led to an increase of DC conductivity (σDC) due to the creation of additional conducting paths with the polymer nanocomposites and percolation behavior achieved through co-continuous morphology.
On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

NASA Technical Reports Server (NTRS)

Schmidt, P.; Das, M. B.

1972-01-01

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.
Low-frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm).

PubMed

Samanta, Sudeshna; Das, Kaustuv; Raychaudhuri, Arup Kumar

2013-04-10

: Low-frequency flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire (diameter approximately 50 nm). Measurement was done with an alternating current (ac) excitation for the noise measurement superimposed with direct current (dc) bias that can be controlled independently. The observed noise has a spectral power density ∝1/fα. Application of the superimposed dc bias (retaining the ac bias unchanged) with a value more than the Schottky barrier height at the junction leads to a large suppression of the noise amplitude along with a change of α from 2 to ≈ 1. The dc bias-dependent part of the noise has been interpreted as arising from the interface region. The residual dc bias-independent flicker noise is suggested to arise from the single strand of Si nanowire, which has the conventional 1/f spectral power density.
Low-frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm)

PubMed Central

2013-01-01

Low-frequency flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire (diameter approximately 50 nm). Measurement was done with an alternating current (ac) excitation for the noise measurement superimposed with direct current (dc) bias that can be controlled independently. The observed noise has a spectral power density ∝1/fα. Application of the superimposed dc bias (retaining the ac bias unchanged) with a value more than the Schottky barrier height at the junction leads to a large suppression of the noise amplitude along with a change of α from 2 to ≈ 1. The dc bias-dependent part of the noise has been interpreted as arising from the interface region. The residual dc bias-independent flicker noise is suggested to arise from the single strand of Si nanowire, which has the conventional 1/f spectral power density. PMID:23574820
Modeling and simulation, and their validation of three-phase transformers with three legs under DC bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fuchs, E.F.; You, Y.; Roesler, D.J.

This paper proposes a new model for three-phase transformers with three legs with and without tank under DC bias based on electric and magnetic circuit theory. For the calculation of the nonsinusoidal no-load currents, a combination of time and frequency domains is used. The analysis shows that (1) asymmetric three-phase transformers with three legs generate magnetizing currents with triplen harmonics not being of the zero-sequence type. (2) The wave shapes of the three magnetizing currents of (asymmetric) transformers are dependent on the phase sequence. (3) The magnetic history of transformer magnetization -- due to residual magnetization and hysteresis of themore » tank -- cannot be ignored if a DC bias is present and the magnetic influence of the tank is relatively strong, e.g., for oil-cooled transformers. (4) Symmetric three-phase transformers with three legs generate no-load currents without triplen harmonics. (5) The effects of DC bias currents (e.g., reactive power demand, harmonic distortion) can be suppressed employing symmetric three-phase transformers with three legs including tank. Measurements corroborate computational results; thus this nonlinear model is valid and accurate.« less
DC bias effect on alternating current electrical conductivity of poly(ethylene terephthalate)/alumina nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikam, Pravin N., E-mail: pravinya26@gmail.com; Deshpande, Vineeta D., E-mail: drdeshpandevd@gmail.com

Polymer nanocomposites based on metal oxide (ceramic) nanoparticles are a new class of materials with unique properties and designed for various applications such as electronic device packaging, insulation, fabrication and automotive industries. Poly(ethylene terephthalate) (PET)/alumina (Al{sub 2}O{sub 3}) nanocomposites with filler content between 1 wt% and 5 wt% were prepared by melt compounding method using co-rotating twin screw extruder and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and precision LCR meter techniques. The results revealed that proper uniform dispersion at lower content up to 2 wt% of nano-alumina observed by using TEM. Aggregation of nanoparticles was observedmore » at higher content of alumina examined by using SEM and TEM. The frequency dependences of the alternating current (AC) conductivity (σ{sub AC}) of PET/alumina nanocomposites on the filler content and DC bias were investigated in the frequency range of 20Hz - 1MHz. The results showed that the AC and direct current (DC) conductivity increases with increasing DC bias and nano-alumina content upto 3 wt%. It follows the Jonscher’s universal power law of solids. It revealed that σ{sub AC} of PET/alumina nanocomposites can be well characterized by the DC conductivity (σ{sub DC}), critical frequency (ω{sub c}), critical exponent of the power law (s). Roll of DC bias potential led to an increase of DC conductivity (σ{sub DC}) due to the creation of additional conducting paths with the polymer nanocomposites and percolation behavior achieved through co-continuous morphology.« less
High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.
High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less
Field-Tuned Superconductor-Insulator Transition with and without Current Bias.

PubMed

Bielejec, E; Wu, Wenhao

2002-05-20

The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin beryllium films quench condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product nuz = 1.35+/-0.10 and a critical sheet resistance, R(c), of about 1.2R(Q), with R(Q) = h/4e(2). However, in the presence of dc bias currents that are smaller than the zero-field critical currents, nuz becomes 0.75+/-0.10. This new set of exponents suggests that the field-tuned transitions with and without a dc bias current belong to different universality classes.
DC currents collected by a RF biased electrode quasi-parallel to the magnetic field

NASA Astrophysics Data System (ADS)

Faudot, E.; Devaux, S.; Moritz, J.; Bobkov, V.; Heuraux, S.

2017-10-01

Local plasma biasings due to RF sheaths close to ICRF antennas result mainly in a negative DC current collection on the antenna structure. In some specific cases, we may observe positive currents when the ion mobility (seen from the collecting surface) overcomes the electron one or/and when the collecting surface on the antenna side becomes larger than the other end of the flux tube connected to the wall. The typical configuration is when the antenna surface is almost parallel to the magnetic field lines and the other side perpendicular. To test the optimal case where the magnetic field is quasi-parallel to the electrode surface, one needs a linear magnetic configuration as our magnetized RF discharge experiment called Aline. The magnetic field angle is in our case lower than 1 relative to the RF biased surface. The DC current flowing through the discharge has been measured as a function of the magnetic field strength, neutral gas (He) pressure and RF power. The main result is the reversal of the DC current depending on the magnetic field, collision frequency and RF power level.
Effect of a direct current bias on the electrohydrodynamic performance of a surface dielectric barrier discharge actuator for airflow control

NASA Astrophysics Data System (ADS)

Yan, Huijie; Yang, Liang; Qi, Xiaohua; Ren, Chunsheng

2015-02-01

The effect of a DC bias on the electrohydrodynamics (EHD) force induced by a surface dielectric barrier AC discharge actuator for airflow control at the atmospheric pressure is investigated. The measurement of the surface potential due to charge deposition at different DC biases is carried out by using a special designed corona like discharge potential probe. From the surface potential data, the plasma electromotive force is shown not affected much by the DC biases except for some reduction of the DC bias near the exposed electrode edge for the sheath-like configuration. The total thrust is measured by an analytical balance, and an almost linear relationship to the potential voltage at the exposed electrode edge is found for the direct thrust force. The temporally averaged ionic wind characteristics are investigated by Pitot tube sensor and schlieren visualization system. It is found that the ionic wind velocity profiles with different DC biases are almost the same in the AC discharge plasma area but gradually diversified in the further downstream area as well as the upper space away from the discharge plasma area. Also, the DC bias can significantly modify the topology of the ionic wind produced by the AC discharge actuator. These results can provide an insight into how the DC biases to affect the force generation.
Center conductor diagnostic for multipactor detection in inaccessible geometries.

PubMed

Chaplin, Vernon H; Hubble, Aimee A; Clements, Kathryn A; Graves, Timothy P

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying V DC /V RF0 <0.8, where V RF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting V DC /V RF0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all-this is the preferred implementation, but biases in the range V DC =0-10V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

Toroidal-Core Microinductors Biased by Permanent Magnets

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Blaes, Brent

2003-01-01

The designs of microscopic toroidal-core inductors in integrated circuits of DC-to-DC voltage converters would be modified, according to a proposal, by filling the gaps in the cores with permanent magnets that would apply bias fluxes (see figure). The magnitudes and polarities of the bias fluxes would be tailored to counteract the DC fluxes generated by the DC components of the currents in the inductor windings, such that it would be possible to either reduce the sizes of the cores or increase the AC components of the currents in the cores without incurring adverse effects. Reducing the sizes of the cores could save significant amounts of space on integrated circuits because relative to other integrated-circuit components, microinductors occupy large areas - of the order of a square millimeter each. An important consideration in the design of such an inductor is preventing magnetic saturation of the core at current levels up to the maximum anticipated operating current. The requirement to prevent saturation, as well as other requirements and constraints upon the design of the core are expressed by several equations based on the traditional magnetic-circuit approximation. The equations involve the core and gap dimensions and the magnetic-property parameters of the core and magnet materials. The equations show that, other things remaining equal, as the maximum current is increased, one must increase the size of the core to prevent the flux density from rising to the saturation level. By using a permanent bias flux to oppose the flux generated by the DC component of the current, one would reduce the net DC component of flux in the core, making it possible to reduce the core size needed to prevent the total flux density (sum of DC and AC components) from rising to the saturation level. Alternatively, one could take advantage of the reduction of the net DC component of flux by increasing the allowable AC component of flux and the corresponding AC component of current. In either case, permanent-magnet material and the slant (if any) and thickness of the gap must be chosen according to the equations to obtain the required bias flux. In modifying the design of the inductor, one must ensure that the inductance is not altered. The simplest way to preserve the original value of inductance would be to leave the gap dimensions unchanged and fill the gap with a permanent- magnet material that, fortuitously, would produce just the required bias flux. A more generally applicable alternative would be to partly fill either the original gap or a slightly enlarged gap with a suitable permanent-magnet material (thereby leaving a small residual gap) so that the reluctance of the resulting magnetic circuit would yield the desired inductance.
Bi-directional flow induced by an AC electroosmotic micropump with DC voltage bias.

PubMed

Islam, Nazmul; Reyna, Jairo

2012-04-01

This paper discusses the principle of biased alternating current electroosmosis (ACEO) and its application to move the bulk fluid in a microchannel, as an alternative to mechanical pumping methods. Previous EO-driven flow research has looked at the effect of electrode asymmetry and transverse traveling wave forms on the performance of electroosmotic pumps. This paper presents an analysis that was conducted to assess the effect of combining an AC signal with a DC (direct current) bias when generating the electric field needed to impart electroosmosis (EO) within a microchannel. The results presented here are numerical and experimental. The numerical results were generated through simulations performed using COMSOL 3.5a. Currently available theoretical models for EO flows were embedded in the software and solved numerically to evaluate the effects of channel geometry, frequency of excitation, electrode array geometry, and AC signal with a DC bias on the flow imparted on an electrically conducting fluid. Simulations of the ACEO flow driven by a constant magnitude of AC voltage over symmetric electrodes did not indicate relevant net flows. However, superimposing a DC signal over the AC signal on the same symmetric electrode array leads to a noticeable net forward flow. Moreover, changing the polarity of electrical signal creates a bi-directional flow on symmetrical electrode array. Experimental flow measurements were performed on several electrode array configurations. The mismatch between the numerical and experimental results revealed the limitations of the currently available models for the biased EO. However, they confirm that using a symmetric electrode array excited by an AC signal with a DC bias leads to a significant improvement in flow rates in comparison to the flow rates obtained in an asymmetric electrode array configuration excited just with an AC signal. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Effects of mould on electrochemical migration behaviour of immersion silver finished printed circuit board.

PubMed

Yi, Pan; Xiao, Kui; Dong, Chaofang; Zou, Shiwen; Li, Xiaogang

2018-02-01

The role played by mould in the electrochemical migration (ECM) behaviour of an immersion silver finished printed circuit board (PCB-ImAg) under a direct current (DC) bias was investigated. An interesting phenomenon is found whereby mould, especially Aspergillus niger, can preferentially grow well on PCB-ImAg under electrical bias and then bridge integrated circuits and form a migration path. The cooperation of the mould and DC bias aggravates the ECM process occurring on PCB-ImAg. When the bias voltage is below 15V, ECM almost does not occur for Ag coating. Mechanisms that explain the ECM processes of PCB-ImAg in the presence of mould and DC bias are proposed. Copyright © 2017. Published by Elsevier B.V.
Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

NASA Astrophysics Data System (ADS)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-06-01

We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.
Ultrafast strong-field photoelectron emission from biased metal surfaces: exact solution to time-dependent Schrödinger Equation

PubMed Central

Zhang, Peng; Lau, Y. Y.

2016-01-01

Laser-driven ultrafast electron emission offers the possibility of manipulation and control of coherent electron motion in ultrashort spatiotemporal scales. Here, an analytical solution is constructed for the highly nonlinear electron emission from a dc biased metal surface illuminated by a single frequency laser, by solving the time-dependent Schrödinger equation exactly. The solution is valid for arbitrary combinations of dc electric field, laser electric field, laser frequency, metal work function and Fermi level. Various emission mechanisms, such as multiphoton absorption or emission, optical or dc field emission, are all included in this single formulation. The transition between different emission processes is analyzed in detail. The time-dependent emission current reveals that intense current modulation may be possible even with a low intensity laser, by merely increasing the applied dc bias. The results provide insights into the electron pulse generation and manipulation for many novel applications based on ultrafast laser-induced electron emission. PMID:26818710
Influence of DC-biasing on the performance of graphene spin valve

NASA Astrophysics Data System (ADS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Hussain, Tassadaq; Iqbal, Muhammad Javaid

2018-04-01

Generating and controlling the spin valve signal are key factors in 'spintronics', which aims to utilize the spin degree of electrons. For this purpose, spintronic devices are constructed that can detect the spin signal. Here we investigate the effect of direct current (DC) on the magnetoresistance (MR) of graphene spin valve. The DC input not only decreases the magnitude of MR but also distorts the spin valve signal at higher DC inputs. Also, low temperature measurements revealed higher MR for the device, while the magnitude is noticed to decrease at higher temperatures. Furthermore, the spin polarization associated with NiFe electrodes is continuously increased at low DC bias and low temperatures. We also demonstrate the ohmic behavior of graphene spin valve by showing linear current-voltage (I-V) characteristics of the junction. Our findings may contribute significantly in modulating and controlling the spin transport properties of vertical spin valve structures.
Submicron nickel-oxide-gold tunnel diode detectors for rectennas

NASA Technical Reports Server (NTRS)

Hoofring, A. B.; Kapoor, V. J.; Krawczonek, W.

1989-01-01

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, E.R.C. da; Filho, B.J.C.

This paper presents a PWM current clamping circuit for improving a series resonant DC link converter. This circuit is capable of reducing current peaks to about 1.2--1.4 times the DC bias current. When desired, resonant transition creates notches in the dc link current, allowing the converter`s switches to synchronize with external PWM strategy. A regulated DC current source may be obtained--by using a conventional rectifier source--to feed a DC load or a current source inverter. Phase plane approach makes ease the understanding the operation, control and design procedure of the circuit. Another topology is derived and its features compared tomore » the first circuit. Simulation results for the simplified circuit and for a three-phase induction motor driven by such inverter will be presented. Moreover, the principle is corroborated by experimental results.« less
A fully integrated, wide-load-range, high-power-conversion-efficiency switched capacitor DC-DC converter with adaptive bias comparator for ultra-low-power power management integrated circuit

NASA Astrophysics Data System (ADS)

Asano, Hiroki; Hirose, Tetsuya; Kojima, Yuta; Kuroki, Nobutaka; Numa, Masahiro

2018-04-01

In this paper, we present a wide-load-range switched-capacitor DC-DC buck converter with an adaptive bias comparator for ultra-low-power power management integrated circuit. The proposed converter is based on a conventional one and modified to operate in a wide load range by developing a load current monitor used in an adaptive bias comparator. Measurement results demonstrated that our proposed converter generates a 1.0 V output voltage from a 3.0 V input voltage at a load of up to 100 µA, which is 20 times higher than that of the conventional one. The power conversion efficiency was higher than 60% in the load range from 0.8 to 100 µA.
Light-weight DC to very high voltage DC converter

DOEpatents

Druce, Robert L.; Kirbie, Hugh C.; Newton, Mark A.

1998-01-01

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.
Design and realization of assessment software for DC-bias of transformers

NASA Astrophysics Data System (ADS)

Liu, Chang; Liu, Lian-guang; Yuan, Zhong-chen

2013-03-01

The transformer working at the rated state will partically be saturated, and its mangetic current will be distorted accompanying with various of harmonic, increasing reactive power demand and some other affilicated phenomenon, which will threaten the safe operation of power grid. This paper establishes a transformer saturation circuit model of DCbias under duality principle basing on J-A theory which can reflect the hysteresis characteristics of iron core, and develops an software can assess the effects of transformer DC-bias using hybrid programming technology of C#.net and MATLAB with the microsoft.net platform. This software is able to simulate the mangnetizing current of different structures and assess the Saturation Level of transformers and the influnces of affilicated phenomenon accroding to the parameter of transformers and the DC equivalent voltage. It provides an effective method to assess the influnces of transformers caused by magnetic storm disaster and the earthing current of the HVDC project.
Light-weight DC to very high voltage DC converter

DOEpatents

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.
Current-driven non-linear magnetodynamics in exchange-biased spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seinige, Heidi; Wang, Cheng; Tsoi, Maxim, E-mail: tsoi@physics.utexas.edu

2015-05-07

This work investigates the excitation of parametric resonance in exchange-biased spin valves (EBSVs). Using a mechanical point contact, high density dc and microwave currents were injected into the EBSV sample. Observing the reflected microwave power and the small rectification voltage that develops across the contact allows detecting the current-driven magnetodynamics not only in the bulk sample but originating exclusively from the small contact region. In addition to ferromagnetic resonance (FMR), parametric resonance at twice the natural FMR frequency was observed. In contrast to FMR, this non-linear resonance was excited only in the vicinity of the point contact where current densitiesmore » are high. Power-dependent measurements displayed a typical threshold-like behavior of parametric resonance and a broadening of the instability region with increasing power. Parametric resonance showed a linear shift as a function of applied dc bias which is consistent with the field-like spin-transfer torque induced by current on magnetic moments in EBSV.« less
Performance of an X-ray single pixel TES microcalorimeter under DC and AC biasing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gottardi, L.; Kuur, J. van der; Korte, P. A. J. de

2009-12-16

We are developing Frequency Domain Multiplexing (FDM) for the read-out of TES imaging microcalorimeter arrays for future X-ray missions like IXO. In the FDM configuration the TES is AC voltage biased at a well defined frequencies (between 0.3 to 10 MHz) and acts as an AM modulating element. In this paper we will present a full comparison of the performance of a TES microcalorimeter under DC bias and AC bias at a frequency of 370 kHz. In both cases we measured the current-to-voltage characteristics, the complex impedance, the noise, the X-ray responsivity, and energy resolution. The behaviour is very similarmore » in both cases, but deviations in performances are observed for detector working points low in the superconducting transition (R/R{sub N}<0.5). The measured energy resolution at 5.89 keV is 2.7 eV for DC bias and 3.7 eV for AC bias, while the baseline resolution is 2.8 eV and 3.3 eV, respectively.« less
New quantum oscillations in current driven small junctions

NASA Technical Reports Server (NTRS)

Ben-Jacob, E.; Gefen, Y.

1985-01-01

The response of current-biased Josephson and normal tunnel junctions (JJs and NTJs) such as those fabricated by Voss and Webb (1981) is predicted from a quantum-mechanical description based on the observation that the response of a current-driven open system is equivalent to that of a closed system subject to an external time-dependent voltage bias. Phenomena expected include voltage oscillations with no dc voltage applied, inverse Shapiro steps of dc voltage in the presence of microwave radiation, voltage oscillation in a JJ and an NTJ coupled by a capacitance to a current-biased junction, JJ voltage oscillation frequency = I/e rather than I/2e, and different NTJ resistance than in the voltage-driven case. The effects require approximate experimental parameter values Ic = 15 nA, C = 1 fF, and T much less than 0.4 K for JJs and Ic = a few nA, C = 1 fF, and R = 3 kiloohms for 100-microV inverse Shapiro steps at 10 GHz in NTJs.
Time-dependent photon heat transport through a mesoscopic Josephson device

NASA Astrophysics Data System (ADS)

Lu, Wen-Ting; Zhao, Hong-Kang

2017-02-01

The time-oscillating photon heat current through a dc voltage biased mesoscopic Josephson Junction (MJJ) has been investigated by employing the nonequilibrium Green's function approach. The Landauer-like formula of photon heat current has been derived in both of the Fourier space and its time-oscillating versions, where Coulomb interaction, self inductance, and magnetic flux take effective roles. Nonlinear behaviors are exhibited in the photon heat current due to the quantum nature of MJJ and applied external dc voltage. The magnitude of heat current decreases with increasing the external bias voltage, and subtle oscillation structures appear as the superposition of different photon heat branches. The overall period of heat current with respect to time is not affected by Coulomb interaction, however, the magnitude and phase of it vary considerably by changing the Coulomb interaction.
Performance Comparison of Finemet and Metglas Tape Cores Under Non-Sinusoidal Waveforms with DC Bias (POSTPRINT)

DTIC Science & Technology

2017-06-01

dc converter-based test system was built to intentionally introduce inductor current harmonics by varying the filter capacitance and parasitic...the inclusion of distorted waveforms obtained by varying filter capacitance. At higher frequencies, the Metglas cores were found to exhibit greater...was built to intentionally introduce inductor current harmonics by varying the filter capacitance and parasitic inductance of the test system. Both
Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

NASA Astrophysics Data System (ADS)

Shikin, A. M.; Voroshin, V. Yu; Rybkin, A. G.; Kokh, K. A.; Tereshchenko, O. E.; Ishida, Y.; Kimura, A.

2018-01-01

A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.
Broadband/Wideband Magnetoelectric Response

DOE PAGES

Park, Chee-Sung; Priya, Shashank

2012-01-01

A broadband/wideband magnetoelectric (ME) composite offers new opportunities for sensing wide ranges of both DC and AC magnetic fields. The broadband/wideband behavior is characterized by flat ME response over a given AC frequency range and DC magnetic bias. The structure proposed in this study operates in the longitudinal-transversal (L-T) mode. In this paper, we provide information on (i) how to design broadband/wideband ME sensors and (ii) how to control the magnitude of ME response over a desired frequency and DC bias regime. A systematic study was conducted to identify the factors affecting the broadband/wideband behavior by developing experimental models andmore » validating them against the predictions made through finite element modeling. A working prototype of the sensor with flat bands for both DC and AC magnetic field conditions was successfully obtained. These results are quite promising for practical applications such as current probe, low-frequency magnetic field sensing, and ME energy harvester.« less
Time-evolution of photon heat current through series coupled two mesoscopic Josephson junction devices

NASA Astrophysics Data System (ADS)

Lu, Wen-Ting; Zhao, Hong-Kang; Wang, Jian

2018-03-01

Photon heat current tunneling through a series coupled two mesoscopic Josephson junction (MJJ) system biased by dc voltages has been investigated by employing the nonequilibrium Green’s function approach. The time-oscillating photon heat current is contributed by the superposition of different current branches associated with the frequencies of MJJs ω j (j = 1, 2). Nonlinear behaviors are exhibited to be induced by the self-inductance, Coulomb interaction, and interference effect relating to the coherent transport of Cooper pairs in the MJJs. Time-oscillating pumping photon heat current is generated in the absence of temperature difference, while it becomes zero after time-average. The combination of ω j and Coulomb interactions in the MJJs determines the concrete heat current configuration. As the external and intrinsic frequencies ω j and ω 0 of MJJs match some specific combinations, resonant photon heat current exhibits sinusoidal behaviors with large amplitudes. Symmetric and asymmetric evolutions versus time t with respect to ω 1 t and ω 2 t are controlled by the applied dc voltages of V 1 and V 2. The dc photon heat current formula is a special case of the general time-dependent heat current formula when the bias voltages are settled to zero. The Aharonov-Bohm effect has been investigated, and versatile oscillation structures of photon heat current can be achieved by tuning the magnetic fluxes threading through separating MJJs.

Biasing and fast degaussing circuit for magnetic materials

DOEpatents

Dress, Jr., William B.; McNeilly, David R.

1984-01-01

A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a d.c. current and alternately apply a selectively damped a.c. current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.
Biasing and fast degaussing circuit for magnetic materials

DOEpatents

Dress, W.B. Jr.; McNeilly, D.R.

1983-10-04

A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a dc current and alternately apply a selectively damped ac current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.
Non-resonant interactions between superconducting circuits coupled through a dc-SQUID

NASA Astrophysics Data System (ADS)

Jin, X. Y.; Lecocq, F.; Cicak, K.; Kotler, S. S.; Peterson, G. A.; Teufel, J. D.; Aumentado, J.; Simmonds, R. W.

We use a flux-biased direct current superconducting quantum interference device (dc-SQUID) to generate non-resonant tunable interactions between transmon qubits and resonators modes. By modulating the flux to the dc-SQUID, we can create an interaction with variable coupling rates from zero to greater than 100 MHz. We explore this system experimentally and describe its operation. Parametric coupling is important for constructing larger coupled systems, useful for both quantum information architectures and quantum simulators.
A scanning tunneling microscope break junction method with continuous bias modulation.

PubMed

Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

2015-09-28

Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.
Triggerable electro-optic amplitude modulator bias stabilizer for integrated optical devices

DOEpatents

Conder, A.D.; Haigh, R.E.; Hugenberg, K.F.

1995-09-26

An improved Mach-Zehnder integrated optical electro-optic modulator is achieved by application and incorporation of a DC bias box containing a laser synchronized trigger circuit, a DC ramp and hold circuit, a modulator transfer function negative peak detector circuit, and an adjustable delay circuit. The DC bias box ramps the DC bias along the transfer function curve to any desired phase or point of operation at which point the RF modulation takes place. 7 figs.
Triggerable electro-optic amplitude modulator bias stabilizer for integrated optical devices

DOEpatents

Conder, Alan D.; Haigh, Ronald E.; Hugenberg, Keith F.

1995-01-01

An improved Mach-Zehnder integrated optical electro-optic modulator is achieved by application and incorporation of a DC bias box containing a laser synchronized trigger circuit, a DC ramp and hold circuit, a modulator transfer function negative peak detector circuit, and an adjustable delay circuit. The DC bias box ramps the DC bias along the transfer function curve to any desired phase or point of operation at which point the RF modulation takes place.
Electrically tunable transport and high-frequency dynamics in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Seinige, Heidi; Williamson, Morgan; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2016-12-01

We report dc and high-frequency transport properties of antiferromagnetic S r3I r2O7 . Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in S r3I r2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.
Logarithmic circuit with wide dynamic range

NASA Technical Reports Server (NTRS)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.
Direct current ballast circuit for metal halide lamp

NASA Technical Reports Server (NTRS)

Lutus, P. (Inventor)

1981-01-01

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.
A robust low quiescent current power receiver for inductive power transmission in bio implants

NASA Astrophysics Data System (ADS)

Helalian, Hamid; Pasandi, Ghasem; Jafarabadi Ashtiani, Shahin

2017-05-01

In this paper, a robust low quiescent current complementary metal-oxide semiconductor (CMOS) power receiver for wireless power transmission is presented. This power receiver consists of three main parts including rectifier, switch capacitor DC-DC converter and low-dropout regulator (LDO) without output capacitor. The switch capacitor DC-DC converter has variable conversion ratios and synchronous controller that lets the DC-DC converter to switch among five different conversion ratios to prevent output voltage drop and LDO regulator efficiency reduction. For all ranges of output current (0-10 mA), the voltage regulator is compensated and is stable. Voltage regulator stabilisation does not need the off-chip capacitor. In addition, a novel adaptive biasing frequency compensation method for low dropout voltage regulator is proposed in this paper. This method provides essential minimum current for compensation and reduces the quiescent current more effectively. The power receiver was designed in a 180-nm industrial CMOS technology, and the voltage range of the input is from 0.8 to 2 V, while the voltage range of the output is from 1.2 to 1.75 V, with a maximum load current of 10 mA, the unregulated efficiency of 79.2%, and the regulated efficiency of 64.4%.
Coupling and tuning of modal frequencies in direct current biased microelectromechanical systems arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kambali, Prashant N.; Swain, Gyanadutta; Pandey, Ashok Kumar, E-mail: ashok@iith.ac.in

2015-08-10

Understanding the coupling of different modal frequencies and their tuning mechanisms has become essential to design multi-frequency MEMS devices. In this work, we fabricate a MEMS beam with fixed boundaries separated from two side electrodes and a bottom electrode. Subsequently, we perform experiments to obtain the frequency variation of in-plane and out-of-plane mechanical modes of the microbeam with respect to both DC bias and laser heating. We show that the frequencies of the two modes coincide at a certain DC bias, which in turn can also be varied due to temperature. Subsequently, we develop a theoretical model to predict themore » variation of the two modes and their coupling due to a variable gap between the microbeam and electrodes, initial tension, and fringing field coefficients. Finally, we discuss the influence of frequency tuning parameters in arrays of 3, 33, and 40 microbeams, respectively. It is also found that the frequency bandwidth of a microbeam array can be increased to as high as 25 kHz for a 40 microbeam array with a DC bias of 80 V.« less
Neutron detection using the superconducting Nb-based current-biased kinetic inductance detector

NASA Astrophysics Data System (ADS)

Shishido, Hiroaki; Yamaguchi, Hiroyuki; Miki, Yuya; Miyajima, Shigeyuki; Oikawa, Kenichi; Harada, Masahide; Hidaka, Mutsuo; Oku, Takayuki; Arai, Masatoshi; Fujimaki, Akira; Ishida, Takekazu

2017-09-01

We demonstrate neutron detection using a solid-state 3He-free superconducting current-biased kinetic inductance detector (CB-KID), which consists of a superconducting Nb meander line and 10B neutron absorption layer. The CB-KID is based on the transient process of kinetic inductance of Cooper pairs induced by the nuclear reaction between 10B and neutrons. Therefore, the CB-KID can be operated in a wide superconducting region in the bias current-temperature diagram, as demonstrated in this paper. The transient change of the kinetic inductance induces the electromagnetic wave pulse under a DC bias current. The signal propagates along the meander line toward both sides with opposite polarity, where the signal polarity is dominated by the bias current direction. The full width at half maximum of the signals remains on the order of a few tens of ns, which confirms the high-speed operation of our detectors. We determine the neutron incident position within 1.3 mm accuracy in one dimension using the multichannel CB-KIDs.
Temperature dependence of electroresistance for La0.67Ba0.33MnO3 manganite

NASA Astrophysics Data System (ADS)

Kumar, Rajesh; Gupta, Ajai K.; Kumar, Vijay; Bhalla, G. L.; Khare, Neeraj

2007-12-01

The influence of dc biasing current on temperature dependence of resistance of La0.67Ba0.33MnO3 bulk sample is reported. A decrease in the resistance (electroresistance) on the application of higher bias current is observed. The electroresistance is maximum at metal insulator transition temperature (TMI) and decreases when the temperature is either increased or decreased from TMI. A two-phase model is proposed to explain the occurrence of electroresistance. The higher bias current leads to an increase in alignment of spins and thus, in turn, leads to an increase in spin stiffness coefficient and decrease in the resistance at TMI.
Study on the effect of measuring methods on incident photon-to-electron conversion efficiency of dye-sensitized solar cells by home-made setup.

PubMed

Guo, Xiao-Zhi; Luo, Yan-Hong; Zhang, Yi-Duo; Huang, Xiao-Chun; Li, Dong-Mei; Meng, Qing-Bo

2010-10-01

An experimental setup is built for the measurement of monochromatic incident photon-to-electron conversion efficiency (IPCE) of solar cells. With this setup, three kinds of IPCE measuring methods as well as the convenient switching between them are achieved. The setup can also measure the response time and waveform of the short-circuit current of solar cell. Using this setup, IPCE results of dye-sensitized solar cells (DSCs) are determined and compared under different illumination conditions with each method. It is found that the IPCE values measured by AC method involving the lock-in technique are sincerely influenced by modulation frequency and bias illumination. Measurements of the response time and waveform of short-circuit current have revealed that this effect can be explained by the slow response of DSCs. To get accurate IPCE values by this method, the measurement should be carried out with a low modulation frequency and under bias illumination. The IPCE values measured by DC method under the bias light illumination will be disturbed since the short-circuit current increased with time continuously due to the temperature rise of DSC. Therefore, temperature control of DSC is considered necessary for IPCE measurement especially in DC method with bias light illumination. Additionally, high bias light intensity (>2 sun) is found to decrease the IPCE values due to the ion transport limitation of the electrolyte.
Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors

NASA Astrophysics Data System (ADS)

Lanham, Steven J.; Kushner, Mark J.

2017-08-01

The metrics for controlling reactive fluxes to wafers for microelectronics processing are becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling ion energy distributions to the wafer involve using several different frequencies and/or pulsed powers. Although effective, these strategies are often costly or present challenges in impedance matching. With the advent of matching schemes for wide band amplifiers, other strategies to customize ion energy distributions become available. In this paper, we discuss results from a computational investigation of biasing substrates using chirped frequencies in high density, electronegative inductively coupled plasmas. Depending on the frequency range and chirp duration, the resulting ion energy distributions exhibit components sampled from the entire frequency range. However, the chirping process also produces transient shifts in the self-generated dc bias due to the reapportionment of displacement and conduction with frequency to balance the current in the system. The dynamics of the dc bias can also be leveraged towards customizing ion energy distributions.
Center conductor diagnostic for multipactor detection in inaccessible geometries

NASA Astrophysics Data System (ADS)

Chaplin, Vernon H.; Hubble, Aimee A.; Clements, Kathryn A.; Graves, Timothy P.

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying VD C/VR F 0 <0.8 , where VRF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting VD C/VR F 0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all—this is the preferred implementation, but biases in the range VD C=0 -10 V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.
Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe

NASA Astrophysics Data System (ADS)

Li, X.; Zhou, Y.; Zheng, C.; Chan, P. H.; Chan, M.; Pong, Philip W. T.

2016-11-01

The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (VDC) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (fR) and VDC are investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data. fR exhibits a |sin δH| dependence on the in-plane field angle (δH). VDC presents either |sin δH| or |sin2 δH cos δH | relation, depending on the magnitude of Hext. Optimized VDC of 24 μV is achieved under 4 mT magnetic field applied at δH = 170°. Under out-of-plane magnetic field, fR shows a cos 2θH reliance on the polar angle (θH), whereas VDC is sin θH dependent. The Oersted field of the DC bias current (IDC) modifies the effective field, resulting in shifted fR. Enhanced VDC with increasing IDC is attributed to the elevated contribution of spin-transfer torque. Maximum VDC of 35.2 μV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher IDC also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of fR and VDC in the GMR microstripe. The results further demonstrate a highly tunable fR and optimized VDC by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small or zero magnetic field.
Solving the Capacitive Effect in the High-Frequency sweep for Langmuir Probe in SYMPLE

NASA Astrophysics Data System (ADS)

Pramila; Patel, J. J.; Rajpal, R.; Hansalia, C. J.; Anitha, V. P.; Sathyanarayana, K.

2017-04-01

Langmuir Probe based measurements need to be routinely carried out to measure various plasma parameters such as the electron density (ne), the electron temperature (Te), the floating potential (Vf), and the plasma potential (Vp). For this, the diagnostic electronics along with the biasing power supplies is installed in standard industrial racks with a 2KV isolation transformer. The Signal Conditioning Electronics (SCE) system is populated inside the 4U-chassis based system with the front-end electronics, designed using high common mode differential amplifiers which can measure small differential signal in presence of high common mode dc- bias or ac ramp voltage used for biasing the probes. DC-biasing of the probe is most common method for getting its I-V characteristic but method of biasing the probe with a sweep at high frequency encounters the problem of corruption of signal due to capacitive effect specially when the sweep period and the discharge time is very fast and die down in the order of μs or lesser. This paper presents and summarises the method of removing such effects encountered while measuring the probe current.
Mechanical Pre-Stressing a Transducer through a Negative DC Biasing Field

DTIC Science & Technology

2017-04-21

13 ii LIST OF ABBREVIATIONS AND ACRONYMS AC Alternating Current DC Direct Currant FEA Finite Element Analysis NUWC Naval...at resonance into tension is shown in figure 3; it was estimated from finite element analysis (FEA) that the tensional stresses exceeded 2000 psi...PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Stephen C. Butler 5.d PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION
Highly Efficient Amplifier for Ka-Band Communications

NASA Technical Reports Server (NTRS)

1996-01-01

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Direct-current cathodic vacuum arc system with magnetic-field mechanism for plasma stabilization.

PubMed

Zhang, H-S; Komvopoulos, K

2008-07-01

Filtered cathodic vacuum arc (FCVA) deposition is characterized by plasma beam directionality, plasma energy adjustment via substrate biasing, macroparticle filtering, and independent substrate temperature control. Between the two modes of FCVA deposition, namely, direct current (dc) and pulsed arc, the dc mode yields higher deposition rates than the pulsed mode. However, maintaining the dc arc discharge is challenging because of its inherent plasma instabilities. A system generating a special configuration of magnetic field that stabilizes the dc arc discharge during film deposition is presented. This magnetic field is also part of the out-of-plane magnetic filter used to focus the plasma beam and prevent macroparticle film contamination. The efficiency of the plasma-stabilizing magnetic-field mechanism is demonstrated by the deposition of amorphous carbon (a-C) films exhibiting significantly high hardness and tetrahedral carbon hybridization (sp3) contents higher than 70%. Such high-quality films cannot be produced by dc arc deposition without the plasma-stabilizing mechanism presented in this study.
Time-dependent photon heat transport through a mesoscopic Josephson device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Wen-Ting; Zhao, Hong-Kang, E-mail: zhaohonk@bit.edu.cn

The time-oscillating photon heat current through a dc voltage biased mesoscopic Josephson Junction (MJJ) has been investigated by employing the nonequilibrium Green’s function approach. The Landauer-like formula of photon heat current has been derived in both of the Fourier space and its time-oscillating versions, where Coulomb interaction, self inductance, and magnetic flux take effective roles. Nonlinear behaviors are exhibited in the photon heat current due to the quantum nature of MJJ and applied external dc voltage. The magnitude of heat current decreases with increasing the external bias voltage, and subtle oscillation structures appear as the superposition of different photon heatmore » branches. The overall period of heat current with respect to time is not affected by Coulomb interaction, however, the magnitude and phase of it vary considerably by changing the Coulomb interaction. - Highlights: • The time-oscillating photon heat current through a mesoscopic Josephson Junction has been investigated. • The Landauer-like formula of photon heat current has been derived by the nonequilibrium Green’s function approach. • Nonlinear behaviors are exhibited in the photon heat current resulting from the self inductance and Coulomb interaction. • The oscillation structure of heat current is composed of the superposition of oscillations with different periods.« less
Series array of highly hysteretic Josephson junctions coupled to a microstrip resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costabile, G.; Andreone, D.; Lacquaniti, V.

1985-07-15

We have tested a new device based on a 12 junction array coupled to a resonator. We have explored the feasibility of the phase lock for all the junctions at the same biasing current, which yields voltage quantization across each junction, eliminating the need to individually bias the junctions. The whole rf structure has been realized by stripline technology. The resonator is fed by a 50-..cap omega.. line and is decoupled from the dc circuit by elliptical low-pass filters inserted in the bias leads.
Biased four-point probe resistance

NASA Astrophysics Data System (ADS)

Garcia-Vazquez, Valentin

2017-11-01

The implications of switching the current polarity in a four-point probe resistance measurement are presented. We demonstrate that, during the inversion of the applied current, any change in the voltage V produced by a continuous drop of the sample temperature T will induce a bias in the temperature-dependent DC resistance. The analytical expression for the bias is deduced and written in terms of the variations of the measured voltages with respect to T and by the variations of T with respect to time t. Experimental data measured on a superconducting Nb thin film confirm that the bias of the normal-state resistance monotonically increases with the cooling rate dT/dt while keeping fixed dV/dT; on the other hand, the bias increases with dV/dT, reaching values up to 13% with respect to the unbiased resistance obtained at room temperature.
Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

NASA Astrophysics Data System (ADS)

Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Sun, Min-Chul; Kim, Garam; Kim, Hyun Woo; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

2010-11-01

A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light stress, and it is completely different from widely accepted phenomenon which explains that negative-bias stress results in Vth shift in the left direction by bias-induced hole-trapping. Gate current measurement is performed to explain the unusual positive Vth shift under simultaneous application of light and negative gate bias. As a result, it is clearly found that the positive Vth shift is derived from electron injection from gate electrode to gate insulator.
Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.

In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 10{sup 6} A/cm{sup 2}) or greater, these anomalous devices show an increase in the fraction of the power presentmore » in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER anomaly is detected at DC biases greater than 300 mV. These differences in the anomalous devices indicate a change in the micromagnetic resonant mode structure at high applied bias.« less
Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

NASA Astrophysics Data System (ADS)

Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

2018-04-01

In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.
Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

PubMed

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.
Controlled growth of aligned carbon nanotube using pulsed glow barrier discharge

NASA Astrophysics Data System (ADS)

Nozaki, Tomohiro; Kimura, Yoshihito; Okazaki, Ken

2002-10-01

We first achieved a catalytic growth of aligned carbon nanotube (CNT) using atmospheric pressure pulsed glow barrier discharge combined with DC bias (1000 V). Aligned CNT can grow with the directional electric field, and this is a big challenge in barrier discharges since dielectric barrier does not allow DC bias and forces to use AC voltage to maintain stable plasma conditions. To overcome this, we developed a power source generating Gaussian-shape pulses at 20 kpps with 4% duty, and DC bias was applied to the GND electrode where Ni-, Fe-coated substrate existed. With positive pulse, i.e. substrate was the cathode, random growth of CNT was observed at about 10^9 cm-2. Growth rate significantly reduced when applied negative pulse; Negative glow formation near substrate is essential for sufficient supply of radical species to the catalyst. If -DC was biased, aligned CNT with 20 nm was synthesized because negative bias enhanced negative glow formation. Interestingly, 2 to 3 CNTs stuck each other with +DC bias, resulting in 50-70 nm and non-aligned CNT. Atmospheric pressure glow barrier discharges can be highly controlled and be a potential alternative to vacuum plasmas for CVD, micro-scale, nano-scale fabrication.
Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

NASA Astrophysics Data System (ADS)

Sometani, Mitsuru; Okamoto, Mitsuo; Hatakeyama, Tetsuo; Iwahashi, Yohei; Hayashi, Mariko; Okamoto, Dai; Yano, Hiroshi; Harada, Shinsuke; Yonezawa, Yoshiyuki; Okumura, Hajime

2018-04-01

We investigated methods of measuring the threshold voltage (V th) shift of 4H-silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under positive DC, negative DC, and AC gate bias stresses. A fast measurement method for V th shift under both positive and negative DC stresses revealed the existence of an extremely large V th shift in the short-stress-time region. We then examined the effect of fast V th shifts on drain current (I d) changes within a pulse under AC operation. The fast V th shifts were suppressed by nitridation. However, the I d change within one pulse occurred even in commercially available SiC MOSFETs. The correlation between I d changes within one pulse and V th shifts measured by a conventional method is weak. Thus, a fast and in situ measurement method is indispensable for the accurate evaluation of I d changes under AC operation.
Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dyer, G. C.; Olson, B. V.; Hawkins, S. D.

2016-01-04

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.
A split-cavity design for the incorporation of a DC bias in a 3D microwave cavity

NASA Astrophysics Data System (ADS)

Cohen, Martijn A.; Yuan, Mingyun; de Jong, Bas W. A.; Beukers, Ewout; Bosman, Sal J.; Steele, Gary A.

2017-04-01

We report on a technique for applying a DC bias in a 3D microwave cavity. We achieve this by isolating the two halves of the cavity with a dielectric and directly using them as DC electrodes. As a proof of concept, we embed a variable capacitance diode in the cavity and tune the resonant frequency with a DC voltage, demonstrating the incorporation of a DC bias into the 3D cavity with no measurable change in its quality factor at room temperature. We also characterize the architecture at millikelvin temperatures and show that the split cavity design maintains a quality factor Qi ˜ 8.8 × 105, making it promising for future quantum applications.
A low-power high-sensitivity analog front-end for PPG sensor.

PubMed

Binghui Lin; Atef, Mohamed; Guoxing Wang

2017-07-01

This paper presents a low-power analog front-end (AFE) photoplethysmography (PPG) sensor fabricated in 0.35 μm CMOS process. The AFE amplifies the weak photocurrent from the photodiode (PD) and converts it to a strong voltage at the output. In order to decrease the power consumption, the circuits are designed in subthreshold region; so the total biasing current of the AFE is 10 μ A. Since the large input DC photocurrent is a big issue for the PPG sensing circuit, we apply a DC photocurrent rejection technique by adding a DC current-cancellation loop to reject the large DC photocurrent up to 10 μA. In addition, a pseudo resistor is used to reduce the high-pass corner frequency below 0.5 Hz and Gm-C filter is adapted to reject the out-of-band noise higher than 16 Hz. For the whole sensor, the amplifier chain can achieve a total gain of 140 dBμ and an input integrated noise current of 68.87 pA rms up to 16 Hz.
Pass-band reconfigurable spoof surface plasmon polaritons

NASA Astrophysics Data System (ADS)

Zhang, Hao Chi; He, Pei Hang; Gao, Xinxin; Tang, Wen Xuan; Cui, Tie Jun

2018-04-01

In this paper, we introduce a new scheme to construct the band-pass tunable filter based on the band-pass reconfigurable spoof surface plasmon polaritons (SPPs), whose cut-off frequencies at both sides of the passband can be tuned through changing the direct current (DC) bias of varactors. Compared to traditional technology (e.g. microstrip filters), the spoof SPP structure can provide more tight field confinement and more significant field enhancement, which is extremely valuable for many system applications. In order to achieve this scheme, we proposed a specially designed SPP filter integrated with varactors and DC bias feeding structure to support the spoof SPP passband reconfiguration. Furthermore, the full-wave simulated result verifies the outstanding performance on both efficiency and reconfiguration, which has the potential to be widely used in advanced intelligent systems.
MEMS fabrication and frequency sweep for suspending beam and plate electrode in electrostatic capacitor

NASA Astrophysics Data System (ADS)

Zhu, Jianxiong; Song, Weixing

2018-01-01

We report a MEMS fabrication and frequency sweep for a high-order mode suspending beam and plate layer in electrostatic micro-gap semiconductor capacitor. This suspended beam and plate was designed with silicon oxide (SiO2) film which was fabricated using bulk silicon micromachining technology on both side of a silicon substrate. The designed semiconductor capacitors were driven by a bias direct current (DC) and a sweep frequency alternative current (AC) in a room temperature for an electrical response test. Finite element calculating software was used to evaluate the deformation mode around its high-order response frequency. Compared a single capacitor with a high-order response frequency (0.42 MHz) and a 1 × 2 array parallel capacitor, we found that the 1 × 2 array parallel capacitor had a broader high-order response range. And it concluded that a DC bias voltage can be used to modulate a high-order response frequency for both a single and 1 × 2 array parallel capacitors.
Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jyegal, Jang, E-mail: jjyegal@inu.ac.kr

Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onsetmore » of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices.« less
Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bora, B., E-mail: bbora@cchen.cl

2015-10-15

On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found tomore » work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage.« less
Examination of the temperature dependent electronic behavior of GeTe for switching applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Champlain, James G.; Ruppalt, Laura B.; Guyette, Andrew C.

2016-06-28

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally highmore » amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.« less
Differential Depletion Capacitance Approximation Analysis Under DC Voltage for Air-Exposed Cu/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Korkut, A.

It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential (Vbi), donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first Vbi, then reduced to second Vbi under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.
Growing Neural PC-12 Cell on Crosslinked Silica Aerogels Increases Neurite Extension in the Presence of an Electric Field.

PubMed

Lynch, Kyle J; Skalli, Omar; Sabri, Firouzeh

2018-04-20

Externally applied electrical stimulation (ES) has been shown to enhance the nerve regeneration process and to influence the directionality of neurite outgrowth. In addition, the physical and chemical properties of the substrate used for nerve-cell regeneration is critical in fostering regeneration. Previously, we have shown that polyurea-crosslinked silica aerogels (PCSA) exert a positive influence on the extension of neurites by PC-12 cells, a cell-line model widely used to study neurite extension and electrical excitability. In this work, we have examined how an externally applied electric field (EF) influences the extension of neurites in PC-12 cells grown on two substrates: collagen-coated dishes versus collagen-coated crosslinked silica aerogels. The externally applied direct current (DC) bias was applied in vitro using a custom-designed chamber containing polydimethysiloxane (PDMS) embedded copper electrodes to create an electric field across the substrate for the cultured PC-12 cells. Results suggest orientation preference towards the anode, and, on average, longer neurites in the presence of the applied DC bias than with 0 V DC bias. In addition, neurite length was increased in cells grown on silica-crosslinked aerogel when compared to cells grown on regular petri-dishes. These results further support the notion that PCSA is a promising material for nerve regeneration.

Effect of DC bias on dielectric properties of nanocrystalline CuAlO2

NASA Astrophysics Data System (ADS)

Prakash, T.; Ramasamy, S.; Murty, B. S.

2013-03-01

Grain boundary effect on the room temperature dielectric behavior in mechanically alloyed nanocrystalline CuAlO2 has been investigated using impedance spectroscopy under the applied DC bias voltages 0 V to 4.8 V in a periodic interval of 0.2 V. Analysis of impedance data confirms the existence of double Schottky potential barrier heights ( Φ b ) between two adjacent grains (left and right side) with grain boundary and its influences in dielectric relaxation time ( τ), dielectric constant ( ɛ') and dielectric loss (tan δ) factor. Also, clear evidence on the suppression of Φ b was demonstrated in the higher applied bias voltages with the parameter τ. At equilibrium state, τ is 0.63 ms and it was reduced to 0.13 ms after the 3.2 V applied DC bias. These observed DC bias voltage effects are obeying `brick layer model' and also elucidates Φ b is playing a crucial role in controlling dielectric properties of nanomaterials.
Heat current through an artificial Kondo impurity beyond linear response

NASA Astrophysics Data System (ADS)

Sierra, Miguel A.; Sánchez, David

2018-03-01

We investigate the heat current of a strongly interacting quantum dot in the presence of a voltage bias in the Kondo regime. Using the slave-boson mean-field theory, we discuss the behavior of the energy flow and the Joule heating. We find that both contributions to the heat current display interesting symmetry properties under reversal of the applied dc bias. We show that the symmetries arise from the behavior of the dot transmission function. Importantly, the transmission probability is a function of both energy and voltage. This allows us to analyze the heat current in the nonlinear regime of transport. We observe that nonlinearities appear already for voltages smaller than the Kondo temperature. Finally, we suggest to use the contact and electric symmetry coefficients as a way to measure pure energy currents.
Degradation and recovery of iron doped barium titanate single crystals via modulus spectroscopy and thermally stimulated depolarization current

NASA Astrophysics Data System (ADS)

Carter, J. J.; Bayer, T. J. M.; Randall, C. A.

2017-04-01

Understanding resistance degradation during the application of DC bias and recovery after removing the DC bias provides insight into failure mechanisms and defects in dielectric materials. In this experiment, modulus spectroscopy and thermally stimulated depolarization current (TSDC) techniques were used to characterize the degradation and recovery of iron-doped barium titanate single crystals. Modulus spectroscopy is a very powerful analytical tool applied during degradation and recovery to observe changes in the local conductivity distribution. During degradation, oxygen vacancies migrate to the cathode region, and a counter flow of oxygen anions migrates towards the anode. With increasing time during degradation, the distribution of conductivity broadens only slightly exhibiting crucial differences to iron doped strontium titanate. After removing the DC bias, the recovery shows that a second previously unobserved and distinct conductivity maximum arises in the modulus data. This characteristic with two maxima related to different conductivities in the anode and cathode region is what can be expected from the published defect chemistry. It will be concluded that only the absence of an external electric field during recovery measurements permits the observation of local conductivity measurements without the presence of non-equilibrium conditions such as charge injection. Equilibrium conductivity as a function of oxygen vacancy concentration is described schematically. Oxygen vacancy migration during degradation and recovery is verified by TSDC analysis. We establish a self-consistent rationale of the transient changes in the modulus and TSDC for the iron doped barium titanate single crystal system including electron, hole and oxygen vacancy conductivity. During degradation, the sample fractured.
High-voltage supply for neutron tubes in well-logging applications

DOEpatents

Humphreys, D.R.

1982-09-15

A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.
High voltage supply for neutron tubes in well logging applications

DOEpatents

Humphreys, D. Russell

1989-01-01

A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.
Measuring surfactant concentration in plating solutions

DOEpatents

Bonivert, William D.; Farmer, Joseph C.; Hachman, John T.

1989-01-01

An arrangement for measuring the concentration of surfactants in a electrolyte containing metal ions includes applying a DC bias voltage and a modulated voltage to a counter electrode. The phase angle between the modulated voltage and the current response to the modulated voltage at a working electrode is correlated to the surfactant concentration.
Microwave switching power divider. [antenna feeds

NASA Technical Reports Server (NTRS)

Stockton, R. J.; Johnson, R. W. (Inventor)

1981-01-01

A pair of parallel, spaced-apart circular ground planes define a microwave cavity with multi-port microwave power distributing switching circuitry formed on opposite sides of a thin circular dielectric substrate disposed between the ground planes. The power distributing circuitry includes a conductive disk located at the center of the substrate and connected to a source of microwave energy. A high speed, low insertion loss switching diode and a dc blocking capacitor are connected in series between the outer end of a transmission line and an output port. A high impedance, microwave blocking dc bias choke is connected between each switching diode and a source of switching current. The switching source forward biases the diodes to couple microwave energy from the conductive disk to selected output ports and, to associated antenna elements connected to the output ports to form a synthesized antenna pattern.
Spectral properties of rf emission from high Tc films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, G.; Konopka, J.; Vitale, S.

1990-09-15

Spectral properties of rf radiation from intrinsic Josephson junctions in high {Tc} Y-Ba-Cu-O thin film have been measured in the frequency range up to 1.5 GHz. Narrow emission lines with the 3 dB bandwidth of the order of 20 MHz were detected indicating that Josephson clusters radiate coherently. Synchronization conditions are determined by dc current and external magnetic field bias. Frequency locking of radiation to external resonant circuit was also observed. Spectral line narrowing due to resonant lock was distinguished from the coherence-induced narrowing by different tuning properties of the emission line. Noncoherent Josephson radiation manifests itself as a broadbandmore » background noise increase. A pronounced 1/{ital f}-like tail sensitive to dc bias and magnetic field was observed in a low frequency part of the spectrum.« less
Noise Intensity-Intensity Correlations and the Fourth Cumulant of Photo-assisted Shot Noise

NASA Astrophysics Data System (ADS)

Forgues, Jean-Charles; Sane, Fatou Bintou; Blanchard, Simon; Spietz, Lafe; Lupien, Christian; Reulet, Bertrand

2013-10-01

We report the measurement of the fourth cumulant of current fluctuations in a tunnel junction under both dc and ac (microwave) excitation. This probes the non-Gaussian character of photo-assisted shot noise. Our measurement reveals the existence of correlations between noise power measured at two different frequencies, which corresponds to two-mode intensity correlations in optics. We observe positive correlations, i.e. photon bunching, which exist only for certain relations between the excitation frequency and the two detection frequencies, depending on the dc bias of the sample.
An improved large signal model of InP HEMTs

NASA Astrophysics Data System (ADS)

Li, Tianhao; Li, Wenjun; Liu, Jun

2018-05-01

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).
Multipactor susceptibility on a dielectric with a bias dc electric field and a background gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Peng; Lau, Y. Y.; Franzi, Matthew

2011-05-15

We use Monte Carlo simulations and analytical calculations to derive the condition for the onset of multipactor discharge on a dielectric surface at various combinations of the bias dc electric field, rf electric field, and background pressures of noble gases, such as Argon. It is found that the presence of a tangential bias dc electric field on the dielectric surface lowers the magnitude of rf electric field threshold to initiate multipactor, therefore plausibly offering robust protection against high power microwaves. The presence of low pressure gases may lead to a lower multipactor saturation level, however. The combined effects of tangentialmore » dc electric field and external gases on multipactor susceptibility are presented.« less
Heterojunction photodiode on cleaved SiC

NASA Astrophysics Data System (ADS)

Solovan, Mykhailo M.; Farah, John; Kovaliuk, Taras T.; Brus, Viktor V.; Mostovyi, Andrii I.; Maistruk, Eduard V.; Maryanchuk, Pavlo D.

2018-01-01

Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.
Extended behavioural modelling of FET and lattice-mismatched HEMT devices

NASA Astrophysics Data System (ADS)

Khawam, Yahya; Albasha, Lutfi

2017-07-01

This study presents an improved large signal model that can be used for high electron mobility transistors (HEMTs) and field effect transistors using measurement-based behavioural modelling techniques. The steps for accurate large and small signal modelling for transistor are also discussed. The proposed DC model is based on the Fager model since it compensates between the number of model's parameters and accuracy. The objective is to increase the accuracy of the drain-source current model with respect to any change in gate or drain voltages. Also, the objective is to extend the improved DC model to account for soft breakdown and kink effect found in some variants of HEMT devices. A hybrid Newton's-Genetic algorithm is used in order to determine the unknown parameters in the developed model. In addition to accurate modelling of a transistor's DC characteristics, the complete large signal model is modelled using multi-bias s-parameter measurements. The way that the complete model is performed is by using a hybrid multi-objective optimisation technique (Non-dominated Sorting Genetic Algorithm II) and local minimum search (multivariable Newton's method) for parasitic elements extraction. Finally, the results of DC modelling and multi-bias s-parameters modelling are presented, and three-device modelling recommendations are discussed.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Calabrese, G.; Capineri, L., E-mail: lorenzo.capineri@unifi.it; Granato, M.

This paper describes the design of a system for the characterization of magnetic hysteresis behavior in soft ferrite magnetic cores. The proposed setup can test magnetic materials exciting them with controlled arbitrary magnetic field waveforms, including the capability of providing a DC bias, in a frequency bandwidth up to 500 kHz, with voltages up to 32 V peak-to-peak, and currents up to 10 A peak-to-peak. In order to have an accurate control of the magnetic field waveform, the system is based on a voltage controlled current source. The electronic design is described focusing on closed loop feedback stabilization and passivemore » components choice. The system has real-time hysteretic loop acquisition and visualization. The comparisons between measured hysteresis loops of sample magnetic materials and datasheet available ones are shown. Results showing frequency and thermal behavior of the hysteresis of a test sample prove the system capabilities. Moreover, the B-H loops obtained with a multiple waveforms excitation signal, including DC bias, are reported. The proposal is a low-cost and replicable solution for hysteresis characterization of magnetic materials used in power electronics.« less
Tunable features of magnetoelectric transformers.

PubMed

Dong, Shuxiang; Zhai, Junyi; Priya, Shashank; Li, Jie-Fang; Viehland, Dwight

2009-06-01

We have found that magnetostrictive FeBSiC alloy ribbons laminated with piezoelectric Pb(Zr,Ti)O(3) fiber can act as a tunable transformer when driven under resonant conditions. These composites were also found to exhibit the strongest resonant magnetoelectric voltage coefficient of 750 V/cm-Oe. The tunable features were achieved by applying small dc magnetic biases of -5
Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

PubMed Central

Ratzsch, Stephan; Kley, Ernst-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

2015-01-01

In this study, the influence of direct current (DC) biasing on the growth of titanium dioxide (TiO2) layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD) using Ti(OiPr)4 as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO2 films were deposited with and without DC biasing. A strong dependence of the applied voltage on the formation of crystallites in the TiO2 layer is shown. These crystallites form spherical hillocks on the surface which causes high surface roughness. By applying a higher voltage than the plasma potential no hillock appears on the surface. Based on these results, it seems likely, that ions are responsible for the nucleation and hillock growth. Hence, the hillock formation can be controlled by controlling the ion energy and ion flux. The growth per cycle remains unchanged, whereas the refractive index slightly decreases in the absence of energetic oxygen ions. PMID:28793679
Efficiency enhancement using voltage biasing for ferroelectric polarization in dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Kim, Sangmo; Song, Myoung Geun; Bark, Chung Wung

2018-01-01

Dye-sensitized solar cells (DSSCs) are one of the most promising third generation solar cells that have been extensively researched over the past decade as alternative to silicon-based solar cells, due to their low production cost and high energy-conversion efficiency. In general, a DSSC consists of a transparent electrode, a counter electrode, and an electrolyte such as dye. To achieve high power-conversion efficiency in cells, many research groups have focused their efforts on developing efficient dyes for liquid electrolytes. In this work, we report on the photovoltaic properties of DSSCs fabricated using a mixture of TiO2 with nanosized Fe-doped bismuth lanthanum titanate (nFe-BLT) powder). Firstly, nFe-BLT powders were prepared using a high-energy ball milling process and then, TiO2 and nFe-BLT powders were stoichiometrically blended. Direct current (DC) bias of 20 MV/m was applied to lab-made DSSCs. With the optimal concentration of nFe-BLT doped in the electrode, their light-to-electricity conversion efficiency could be improved by ∼64% compared with DSSCs where no DC bias was applied.
Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Chris, E-mail: chrischang81@gmail.com; Karunasiri, Gamani, E-mail: karunasiri@nps.edu; Alves, Fabio, E-mail: falves@alionscience.com

2016-01-15

Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to bemore » sustainable only for a specific range of RC values depending on the SCR’s intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.« less
GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

1998-01-01

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.
Formaldehyde monitor for automobile exhausts

NASA Technical Reports Server (NTRS)

Easley, W. C.

1973-01-01

Device makes use of microwave spectral absorption in low-Q resonant Stark cell, and indications are that ultimate sensitivity of instrument is within 100 parts per billion of formaldehyde. Microwave source is very small and requires only six-volt dc bias for operation. Coarse tuning is accomplished mechanically and fine tuning by adjusting dc-bias voltage.

Enhanced sub-micron colloidal particle separation with interdigitated microelectrode arrays using mixed AC/DC dielectrophoretic scheme.

PubMed

Swaminathan, Vikhram V; Shannon, Mark A; Bashir, Rashid

2015-04-01

Dielectrophoretic separation of particles finds a variety of applications in the capture of species such as cells, viruses, proteins, DNA from biological systems, as well as other organic and inorganic contaminants from water. The ability to capture particles is constrained by poor volumetric scaling of separation force with respect to particle diameter, as well as the weak penetration of electric fields in the media. In order to improve the separation of sub-micron colloids, we present a scheme based on multiple interdigitated electrode arrays under mixed AC/DC bias. The use of high frequency longitudinal AC bias breaks the shielding effects through electroosmotic micromixing to enhance electric fields through the electrolyte, while a transverse DC bias between the electrode arrays enables penetration of the separation force to capture particles from the bulk of the microchannel. We determine the favorable biasing conditions for field enhancement with the help of analytical models, and experimentally demonstrate the improved capture from sub-micron colloidal suspensions with the mixed AC/DC electrostatic excitation scheme over conventional AC-DEP methods.
Asymmetric Differential Resistance of Current Biased Mesoscopic AuFe Wires

NASA Astrophysics Data System (ADS)

Eom, J.; Chandrasekhar, V.; Neuttiens, G.; Strunk, C.; van Haesendonck, C.; Bruynseraede, Y.

1996-03-01

An anomalous asymmetry is found in the differential resistance dV/dI of mesoscopic AuFe wires as a function of dc bias current at low temperatures. The samples are fabricated by ion implanting Au wires of length 1.0 - 35.0 μ m and of width 0.1 - 1.0 μ m with Fe at two different concentrations, 0.2 at.% and 0.4 at.%. The asymmetry is more pronounced in narrow and short samples. The asymmetric component of dV/dI increases with decreasing temperature, and saturates below the maximum in the spin glass resistance. It is found that the lead configuration for the four-terminal measurement also affects the asymmetric component of dV/dI.
GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

1998-09-08

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.
The Physics of Local Helicity Injection Non-Solenoidal Tokamak Startup

NASA Astrophysics Data System (ADS)

Redd, A. J.; Barr, J. L.; Bongard, M. W.; Fonck, R. J.; Hinson, E. T.; Jardin, S.

2013-10-01

Non-solenoidal startup via Local Helicity Injection (LHI) uses compact current injectors to produce toroidal plasma current Ip up to 170 kA in the PEGASUS Toroidal Experiment, driven by 4-8 kA injector current on timescales of 5-20 milliseconds. Increasing the Ip buildup duration enables experimental demonstration of plasma position control on timescales relevant for high-current startup. LHI-driven discharges exhibit bursty MHD activity, apparently line-tied kinking of LHI-driven field lines, with the bursts correlating with rapid equilibrium changes, sharp Ip rises, and sharp drops in the injector impedance. Preliminary NIMROD results suggest that helical LHI-driven current channels remain coherent, with Ip increases due to reconnection between adjacent helical turns forming axisymmetric plasmoids, and corresponding sharp drops in the bias circuit impedance. The DC injector impedance is consistent with a space charge limit at low bias current and a magnetic limit at high bias current. Internal measurements show the current density profile starts strongly hollow and rapidly fills in during Ip buildup. Simulations of LHI discharges using the Tokamak Simulation Code (TSC) will provide insight into the detailed current drive mechanism and guide experiments on PEFASUS and NSTX-U. Work supported by US DOE Grants DE-FG02-96ER54375 and DE-SC0006928.
Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

NASA Astrophysics Data System (ADS)

Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

2014-12-01

We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.
Solid-state circuit breaker with current-limiting characteristic using a superconducting coil

DOEpatents

Boenig, H.J.

1982-08-16

A thyristor bridge interposes an ac source and a load. A series connected DC source and superconducting coil within the bridge biases the thyristors thereof so as to permit bidirectional ac current flow therethrough under normal operating conditions. Upon a fault condition a control circuit triggers the thyristors so as to reduce ac current flow therethrough to zero in less than two eyeles and to open the bridge thereafter. Upon a temporary overload condition the control circuit triggers the thyristors so as to limit ac current flow therethrough to an acceptable level.
Solid-state circuit breaker with current limiting characteristic using a superconducting coil

DOEpatents

Boenig, Heinrich J.

1984-01-01

A thyristor bridge interposes an ac source and a load. A series connected DC source and superconducting coil within the bridge biases the thyristors thereof so as to permit bidirectional ac current flow therethrough under normal operating conditions. Upon a fault condition a control circuit triggers the thyristors so as to reduce ac current flow therethrough to zero in less than two cycles and to open the bridge thereafter. Upon a temporary overload condition the control circuit triggers the thyristors so as to limit ac current flow therethrough to an acceptable level.
Non-Uniform Bias Enhancement of a Varactor-Tuned FSS used with a Low Profile 2.4 GHz Dipole Antenna

NASA Technical Reports Server (NTRS)

Cure, David; Weller, Thomas M.; Miranda, Felix A.

2012-01-01

In this paper a low profile antenna using a nonuniformly biased varactor-tuned frequency selective surface (FSS) is presented. The tunable FSS avoids the use of vias and has a simplified DC bias network. The voltages to the DC bias ports can be varied independently allowing adjustment in the frequency response and enhanced radiation properties. The measured data demonstrate tunability from 2.15 GHz to 2.63 GHz with peak efficiencies that range from 50% to 90% and instantaneous bandwidths of 50 MHz to 280 MHz within the tuning range. The total antenna thickness is approximately lambda/45.
Characterization on performance of micromixer using DC-biased AC electroosmosis

NASA Astrophysics Data System (ADS)

Park, Bi-O.; Song, Simon

2010-11-01

An active micromixer using DC-biased AC-Electroosmosis (ACEO) is investigated to figure out the effects of design parameters on the mixing performance. The mixer consists of a straight microchannel, with a cross section of 60 x 100 μm, and gold electrode pairs fabricated in the microchannel. The design parameters include the number of electrode pairs, flow rate, DC-biased voltage, AC voltage and AC frequency. First, we found that a mixing index became 80% 100 μm downstream of a single electrode pair with a length of 2 mm when applying a 25Vpp, 2.0 VDC, 100 kHz sine signal to the electrodes. With decreasing AC frequency, the mixing index is affected little. But the mixing index significantly increases with increasing either DC-biased voltage or AC voltage. Also, we were able to increase the mixing index up to 90% by introducing alternating vortices with multiple electrode pairs. Finally, we discovered that the mixing index decreases as the flow rate increases in the microchannel, and there is an optimal number of electrode pairs with respect to a flow rate. Detailed quantitative measurement results will be presented at the meeting.
Giant self-biased magnetoelectric coupling in co-fired textured layered composites

NASA Astrophysics Data System (ADS)

Yan, Yongke; Zhou, Yuan; Priya, Shashank

2013-02-01

Co-fired magnetostrictive/piezoelectric/magnetostrictive laminate structure with silver inner electrode was synthesized and characterized. We demonstrate integration of textured piezoelectric microstructure with the cost-effective low-temperature co-fired layered structure to achieve strong magnetoelectric coupling. Using the co-fired composite, a strategy was developed based upon the hysteretic response of nickel-copper-zinc ferrite magnetostrictive materials to achieve peak magnetoelectric response at zero DC bias, referred as self-biased magnetoelectric response. Fundamental understanding of self-bias phenomenon in composites with single phase magnetic material was investigated by quantifying the magnetization and piezomagnetic changes with applied DC field. We delineate the contribution arising from the interfacial strain and inherent magnetic hysteretic behavior of copper modified nickel-zinc ferrite towards self-bias response.
Extended linear ion trap frequency standard apparatus

NASA Technical Reports Server (NTRS)

Prestage, John D. (Inventor)

1995-01-01

A linear ion trap for frequency standard applications is provided with a plurality of trapping rods equally spaced and applied quadruple rf voltages for radial confinement of atomic ions and biased level pins at each end for axial confinement of the ions. The trapping rods are divided into two linear ion trap regions by a gap in each rod in a common radial plane to provide dc discontinuity, thus dc isolating one region from the other. A first region for ion-loading and preparation fluorescence is biased with a dc voltage to transport ions into a second region for resonance frequency comparison with a local oscillator derived frequency while the second region is held at zero voltage. The dc bias voltage of the regions is reversed for transporting the ions back into the first region for fluorescence measurement. The dual mode cycle is repeated continuously for comparison and feedback control of the local oscillator derived frequency. Only the second region requires magnetic shielding for the resonance function which is sensitive to any ambient magnetic fields.
Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rashid, H., E-mail: hawal@chalmers.se; Desmaris, V.; Pavolotsky, A.

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction.more » The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.« less
Optimization of Advanced ACTPol Transition Edge Sensor Bolometer Operation Using R(T,I) Transition Measurements

NASA Astrophysics Data System (ADS)

Salatino, Maria

2017-06-01

In the current submm and mm cosmology experiments the focal planes are populated by kilopixel transition edge sensors (TESes). Varying incoming power load requires frequent rebiasing of the TESes through standard current-voltage (IV) acquisition. The time required to perform IVs on such large arrays and the resulting transient heating of the bath reduces the sky observation time. We explore a bias step method that significantly reduces the time required for the rebiasing process. This exploits the detectors' responses to the injection of a small square wave signal on top of the dc bias current and knowledge of the shape of the detector transition R(T,I). This method has been tested on two detector arrays of the Atacama Cosmology Telescope (ACT). In this paper, we focus on the first step of the method, the estimate of the TES %Rn.
Temperature dependent charge transport studies across thermodynamic glass transition in P3HT:PCBM bulk heterojunction: insight from J-V and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Sarkar, Atri; Rahaman, Abdulla Bin; Banerjee, Debamalya

2018-03-01

Temperature dependent charge transport properties of P3HT:PCBM bulk heterojunction are analysed by dc and ac measurements under dark conditions across a wide temperature range of 110-473 K, which includes the thermodynamic glass transition temperature (Tg ˜320 K) of the system. A change from Ohmic conduction to space charge limited current conduction at higher (⩾1.2 V) applied bias voltages above ⩾200 K is observed from J-V characteristics. From capacitance-voltage (C-V) measurement at room temperature, the occurrence of a peak near the built-in voltage is observed below the dielectric relaxation frequency, originating from the competition between drift and diffusion driven motions of charges. Carrier concentration (N) is calculated from C-V measurements taken at different temperatures. Room temperature mobility values at various applied bias voltages are in accordance with that obtained from transient charge extraction by linearly increasing voltage measurement. Sample impedance is measured over five decades of frequency across temperature range by using lock-in detection. This data is used to extract temperature dependence of carrier mobility (μ), and dc conductivity (σ_dc ) which is low frequency extrapolation of ac conductivity. An activation energy of ˜126 meV for the carrier hopping process at the metal-semiconductor interface is estimated from temperature dependence of σ_dc . Above T g, μ levels off to a constant value, whereas σ_dc starts to decrease after a transition knee at T g that can be seen as a combined effect of changes in μ and N. All these observed changes across T g can be correlated to enhanced polymer motion above the glass transition.
Strategies on solar observation of Atacama Large Millimeter/submillimeter Array (ALMA) band-1 receiver

NASA Astrophysics Data System (ADS)

Chiong, Chau-Ching; Chiang, Po-Han; Hwang, Yuh-Jing; Huang, Yau-De

2016-07-01

ALMA covering 35-950 GHz is the largest existing telescope array in the world. Among the 10 receiver bands, Band-1, which covers 35-50 GHz, is the lowest. Due to its small dimension and its time-variant frequency-dependent gain characteristics, current solar filter located above the cryostat cannot be applied to Band-1 for solar observation. Here we thus adopt new strategies to fulfill the goals. Thanks to the flexible dc biasing scheme of the HEMT-based amplifier in Band-1 front-end, bias adjustment of the cryogenic low noise amplifier is investigated to accomplish solar observation without using solar filter. Large power handling range can be achieved by the de-tuning bias technique with little degradation in system performance.
Reversal of the asymmetry in a cylindrical coaxial capacitively coupled Ar/Cl 2 plasma

DOE PAGES

Upadhyay, Janardan; Im, Do; Popović, Svetozar; ...

2015-10-08

The reduction of the asymmetry in the plasma sheath voltages of a cylindrical coaxial capacitively coupled plasma is crucial for efficient surface modification of the inner surfaces of concave three-dimensional structures, including superconducting radio frequency cavities. One critical asymmetry effect is the negative dc self-bias, formed across the inner electrode plasma sheath due to its lower surface area compared to the outer electrode. The effect on the self-bias potential with the surface enhancement by geometric modification on the inner electrode structure is studied. The shapes of the inner electrodes are chosen as cylindrical tube, large and small pitch bellows, andmore » disc-loaded corrugated structure (DLCS). The dc self-bias measurements for all these shapes were taken at different process parameters in Ar/Cl 2 discharge. Lastly, the reversal of the negative dc self-bias potential to become positive for a DLCS inner electrode was observed and the best etch rate is achieved due to the reduction in plasma asymmetry.« less
Numerical analysis of electronegative plasma in the extraction region of negative hydrogen ion sources

NASA Astrophysics Data System (ADS)

Kuppel, S.; Matsushita, D.; Hatayama, A.; Bacal, M.

2011-01-01

This numerical study focuses on the physical mechanisms involved in the extraction of volume-produced H- ions from a steady state laboratory negative hydrogen ion source with one opening in the plasma electrode (PE) on which a dc-bias voltage is applied. A weak magnetic field is applied in the source plasma transversely to the extracted beam. The goal is to highlight the combined effects of the weak magnetic field and the PE bias voltage (upon the extraction process of H- ions and electrons). To do so, we focus on the behavior of electrons and volume-produced negative ions within a two-dimensional model using the particle-in-cell method. No collision processes are taken into account, except for electron diffusion across the magnetic field using a simple random-walk model at each time step of the simulation. The results show first that applying the magnetic field (without PE bias) enhances H- ion extraction, while it drastically decreases the extracted electron current. Secondly, the extracted H- ion current has a maximum when the PE bias is equal to the plasma potential, while the extracted electron current is significantly reduced by applying the PE bias. The underlying mechanism leading to the above results is the gradual opening by the PE bias of the equipotential lines towards the parts of the extraction region facing the PE. The shape of these lines is due originally to the electron trapping by the magnetic field.
Proposed Use of Zero Bias Diode Arrays as Thermal Electric Noise Rectifiers and Non-Thermal Energy Harvesters

NASA Astrophysics Data System (ADS)

Valone, Thomas F.

2009-03-01

The well known built-in voltage potential for some select semiconductor p-n junctions and various rectifying devices is proposed to be favorable for generating DC electricity at "zero bias" (with no DC bias voltage applied) in the presence of Johnson noise or 1/f noise which originates from the quantum vacuum (Koch et al., 1982). The 1982 Koch discovery that certain solid state devices exhibit measurable quantum noise has also recently been labeled a finding of dark energy in the lab (Beck and Mackey, 2004). Tunnel diodes are a class of rectifiers that are qualified and some have been credited with conducting only because of quantum fluctuations. Microwave diodes are also good choices since many are designed for zero bias operation. A completely passive, unamplified zero bias diode converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006 under a DARPA contract, utilizing a Sb-based "backward tunnel diode" (BTD). It is reported to be a "true zero-bias diode." It was developed for a "field radiometer" to "collect thermally radiated power" (in other words, 'night vision'). The diode array mounting allows a feed from horn antenna, which functions as a passive concentrating amplifier. An important clue is the "noise equivalent power" of 1.1 pW per root hertz and the "noise equivalent temperature difference" of 10° K, which indicate sensitivity to Johnson noise (Lynch, et al., 2006). There also have been other inventions such as "single electron transistors" that also have "the highest signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices that convert radio frequencies have been invented that operate at outer space temperatures (3 degrees above zero point: 3° K). These devices are tiny nanotech devices which are suitable for assembly in parallel circuits (such as a 2-D array) to possibly produce zero point energy direct current electricity with significant power density (Brenning et al., 2006). Photovoltaic p-n junction cells are also considered for possible higher frequency ZPE transduction. Diode arrays of self-assembled molecular rectifiers or preferably, nano-sized cylindrical diodes are shown to reasonably provide for rectification of electron fluctuations from thermal and non-thermal ZPE sources to create an alternative energy DC electrical generator in the picowatt per diode range.
Stamp transferred suspended graphene mechanical resonators for radio frequency electrical readout.

PubMed

Song, Xuefeng; Oksanen, Mika; Sillanpää, Mika A; Craighead, H G; Parpia, J M; Hakonen, Pertti J

2012-01-11

We present a simple micromanipulation technique to transfer suspended graphene flakes onto any substrate and to assemble them with small localized gates into mechanical resonators. The mechanical motion of the graphene is detected using an electrical, radio frequency (RF) reflection readout scheme where the time-varying graphene capacitor reflects a RF carrier at f = 5-6 GHz producing modulation sidebands at f ± f(m). A mechanical resonance frequency up to f(m) = 178 MHz is demonstrated. We find both hardening/softening Duffing effects on different samples and obtain a critical amplitude of ~40 pm for the onset of nonlinearity in graphene mechanical resonators. Measurements of the quality factor of the mechanical resonance as a function of dc bias voltage V(dc) indicates that dissipation due to motion-induced displacement currents in graphene electrode is important at high frequencies and large V(dc). © 2011 American Chemical Society
Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

PubMed

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Enhanced cell trapping throughput using DC-biased AC electric field in a dielectrophoresis-based fluidic device with densely packed silica beads.

PubMed

Lewpiriyawong, Nuttawut; Xu, Guolin; Yang, Chun

2018-03-01

This paper presents the use of DC-biased AC electric field for enhancing cell trapping throughput in an insulator-based dielectrophoretic (iDEP) fluidic device with densely packed silica beads. Cell suspension is carried through the iDEP device by a pressure-driven flow. Under an applied DC-biased AC electric field, DEP trapping force is produced as a result of non-uniform electric field induced by the gap of electrically insulating silica beads packed between two mesh electrodes that allow both fluid and cells to pass through. While the AC component is mainly to control the magnitude of DEP trapping force, the DC component generates local electroosmotic (EO) flow in the cavity between the beads and the EO flow can be set to move along or against the main pressure-driven flow. Our experimental and simulation results show that desirable trapping is achieved when the EO flow direction is along (not against) the main flow direction. Using our proposed DC-biased AC field, the device can enhance the trapping throughput (in terms of the flowrate of cell suspension) up to five times while yielding almost the same cell capture rates as compared to the pure AC field case. Additionally, the device was demonstrated to selectively trap dead yeast cells from a mixture of flowing live and dead yeast cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Quantum noise in SIS mixers

NASA Astrophysics Data System (ADS)

Zorin, A. B.

1985-03-01

In the present, quantum-statistical analysis of SIS heterodyne mixer performance, the conventional three-port model of the mixer circuit and the microscopic theory of superconducting tunnel junctions are used to derive a general expression for a noise parameter previously used for the case of parametric amplifiers. This expression is numerically evaluated for various quasiparticle current step widths, dc bias voltages, local oscillator powers, signal frequencies, signal source admittances, and operation temperatures.
Design and Development of High Voltage Direct Current (DC) Sources for the Solar Array Module Plasma Interaction Experiment

NASA Technical Reports Server (NTRS)

Bibyk, Irene K.; Wald, Lawrence W.

1995-01-01

Two programmable, high voltage DC power supplies were developed as part of the flight electronics for the Solar Array Module Plasma Interaction Experiment (SAMPIE). SAMPIE's primary objectives were to study and characterize the high voltage arcing and parasitic current losses of various solar cells and metal samples within the space plasma of low earth orbit (LEO). High voltage arcing can cause large discontinuous changes in spacecraft potential which lead to damage of the power system materials and significant Electromagnetic Interference (EMI). Parasitic currents cause a change in floating potential which lead to reduced power efficiency. These primary SAMPIE objectives were accomplished by applying artificial biases across test samples over a voltage range from -600 VDC to +300 VDC. This paper chronicles the design, final development, and test of the two programmable high voltage sources for SAMPIE. The technical challenges to the design for these power supplies included vacuum, space plasma effects, thermal protection, Shuttle vibrations and accelerations.
Simultaneous Nanoscale Surface Charge and Topographical Mapping.

PubMed

Perry, David; Al Botros, Rehab; Momotenko, Dmitry; Kinnear, Sophie L; Unwin, Patrick R

2015-07-28

Nanopipettes are playing an increasingly prominent role in nanoscience, for sizing, sequencing, delivery, detection, and mapping interfacial properties. Herein, the question of how to best resolve topography and surface charge effects when using a nanopipette as a probe for mapping in scanning ion conductance microscopy (SICM) is addressed. It is shown that, when a bias modulated (BM) SICM scheme is used, it is possible to map the topography faithfully, while also allowing surface charge to be estimated. This is achieved by applying zero net bias between the electrode in the SICM tip and the one in bulk solution for topographical mapping, with just a small harmonic perturbation of the potential to create an AC current for tip positioning. Then, a net bias is applied, whereupon the ion conductance current becomes sensitive to surface charge. Practically this is optimally implemented in a hopping-cyclic voltammetry mode where the probe is approached at zero net bias at a series of pixels across the surface to reach a defined separation, and then a triangular potential waveform is applied and the current response is recorded. Underpinned with theoretical analysis, including finite element modeling of the DC and AC components of the ionic current flowing through the nanopipette tip, the powerful capabilities of this approach are demonstrated with the probing of interfacial acid-base equilibria and high resolution imaging of surface charge heterogeneities, simultaneously with topography, on modified substrates.
Volumetric measurement of human red blood cells by MOSFET-based microfluidic gate.

PubMed

Guo, Jinhong; Ai, Ye; Cheng, Yuanbing; Li, Chang Ming; Kang, Yuejun; Wang, Zhiming

2015-08-01

In this paper, we present a MOSFET-based (metal oxide semiconductor field-effect transistor) microfluidic gate to characterize the translocation of red blood cells (RBCs) through a gate. In the microfluidic system, the bias voltage modulated by the particles or biological cells is connected to the gate of MOSFET. The particles or cells can be detected by monitoring the MOSFET drain current instead of DC/AC-gating method across the electronic gate. Polystyrene particles with various standard sizes are utilized to calibrate the proposed device. Furthermore, RBCs from both adults and newborn blood sample are used to characterize the performance of the device in distinguishing the two types of RBCs. As compared to conventional DC/AC current modulation method, the proposed device demonstrates a higher sensitivity and is capable of being a promising platform for bioassay analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A 3.2-GHz fully integrated low-phase noise CMOS VCO with self-biasing current source for the IEEE 802.11a/hiperLAN WLAN standard

NASA Astrophysics Data System (ADS)

Quemada, C.; Adin, I.; Bistue, G.; Berenguer, R.; Mendizabal, J.

2005-06-01

A 3.3V, fully integrated 3.2-GHz voltage-controlled oscillator (VCO) is designed in a 0.18μm CMOS technology for the IEE 802.11a/HiperLAN WLAN standard for the UNII band from 5.15 to 5.35 GHz. The VCO is tunable between 2.85 GHz and 3.31 GHz. NMOS architecture with self-biasing current of the tank source is chosen. A startup circuit has been employed to avoid zero initial current. Current variation is lower than 1% for voltage supply variations of 10%. The use of a self-biasing current source in the tank provides a greater safety in the transconductance value and allows running along more extreme point operation The designed VCO displays a phase noise and output power of -98dBc/Hz (at 100 KHz offset frequency) and 0dBm respectively. This phase noise has been obtained with inductors of 2.2nH and quality factor of 12 at 3.2 GHz, and P-N junction varactors whose quality factor is estimated to exceed 40 at 3.2 GHz. These passive components have been fabricated, measured and modeled previously. The core of the VCO consumes 33mW DC power.
Influence of small DC bias field on the electrical behaviour of Sr- and Mg-doped lanthanum gallate

NASA Astrophysics Data System (ADS)

Raghvendra; Singh, Rajesh Kumar; Singh, Prabhakar

2014-09-01

One of the promising electrolyte materials for solid oxide fuel cells application, Sr- and Mg-doped lanthanum gallate La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM), is synthesized by conventional solid state ceramic route. X-ray Rietveld analysis confirms the formation of main orthorhombic phase at room temperature along with a few minor secondary phases. SEM micrograph reveals the grain and grainboundary morphology of the system. Electrical conductivity of the LSGM sample is measured in the temperature range 573-873 K and in the frequency range 20 Hz-1 MHz at a few small DC bias fields (at 0.0, 0.5, 1.0, 1.5 and 2.0 V). The conductivity spectra show power-law behaviour. Electrical conductivity of the sample is found to be weakly dependent on DC bias field. This is attributed to field-dependent bulk and grainboundary conduction processes. In the present system, under investigated bias field range, the possibility of formation of Schottky barrier is ruled out. The concept of grainboundary channel (pathway) modulation on the application of bias field is proposed.
Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Md Zawawi, Mohamad Adzhar; Missous, Mohamed

2017-12-01

A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2 with variation of within 7%. As for reverse bias, the peak current density is around 22.8 kA/cm2 with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.
Characterization of an active metasurface using terahertz ellipsometry

DOE PAGES

Karl, Nicholas; Heimbeck, Martin S.; Everitt, Henry O.; ...

2017-11-06

Switchable metasurfaces fabricated on a doped epi-layer have become an important platform for developing techniques to control terahertz (THz) radiation, as a DC bias can modulate the transmission characteristics of the metasurface. To model and understand this performance in new device configurations accurately, a quantitative understanding of the bias-dependent surface characteristics is required. In this work, we perform THz variable angle spectroscopic ellipsometry on a switchable metasurface as a function of DC bias. By comparing these data with numerical simulations, we extract a model for the response of the metasurface at any bias value. Using this model, we predict amore » giant bias-induced phase modulation in a guided wave configuration. Lastly, these predictions are in qualitative agreement with our measurements, offering a route to efficient modulation of THz signals.« less
Negative Capacitance in BaTiO3/BiFeO3 Bilayer Capacitors.

PubMed

Hou, Ya-Fei; Li, Wei-Li; Zhang, Tian-Dong; Yu, Yang; Han, Ren-Lu; Fei, Wei-Dong

2016-08-31

Negative capacitances provide an approach to reduce heat generations in field-effect transistors during the switch processes, which contributes to further miniaturization of the conventional integrated circuits. Although there are many studies about negative capacitances using ferroelectric materials, the direct observation of stable ferroelectric negative capacitances has rarely been reported. Here, we put forward a dc bias assistant model in bilayer capacitors, where one ferroelectric layer with large dielectric constant and the other ferroelectric layer with small dielectric constant are needed. Negative capacitances can be obtained when external dc bias electric fields are larger than a critical value. Based on the model, BaTiO3/BiFeO3 bilayer capacitors are chosen as study objects, and negative capacitances are observed directly. Additionally, the upward self-polarization effect in the ferroelectric layer reduces the critical electric field, which may provide a method for realizing zero and/or small dc bias assistant negative capacitances.
Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.
Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Han, Dong-Suk; Moon, Yeon-Keon; Lee, Sih; Kim, Kyung-Taek; Moon, Dae-Yong; Lee, Sang-Ho; Kim, Woong-Sun; Park, Jong-Wan

2012-09-01

In this study, we fabricated phosphorus-doped zinc oxide-based thin-film transistors (TFTs) using direct current (DC) magnetron sputtering at a relatively low temperature of 100°C. To improve the TFT device performance, including field-effect mobility and bias stress stability, phosphorus dopants were employed to suppress the generation of intrinsic defects in the ZnO-based semiconductor. The positive and negative bias stress stabilities were dramatically improved by introducing the phosphorus dopants, which could prevent turn-on voltage ( V ON) shift in the TFTs caused by charge trapping within the active channel layer. The study showed that phosphorus doping in ZnO was an effective method to control the electrical properties of the active channel layers and improve the bias stress stability of oxide-based TFTs.
Oscillatory bistability of real-space transfer in semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Do˙ttling, R.; Scho˙ll, E.

1992-01-01

Charge transport parallel to the layers of a modulation-doped GaAs/AlxGa1-xAs heterostructure is studied theoretically. The heating of electrons by the applied electric field leads to real-space transfer of electrons from the GaAs into the adjacent AlxGa1-xAs layer. For sufficiently large dc bias, spontaneous periodic 100-GHz current oscillations, and bistability and hysteretic switching transitions between oscillatory and stationary states are predicted. We present a detailed investigation of complex bifurcation scenarios as a function of the bias voltage U0 and the load resistance RL. For large RL subcritical Hopf bifurcations and global bifurcations of limit cycles are displayed.
Partition-free theory of time-dependent current correlations in nanojunctions in response to an arbitrary time-dependent bias

NASA Astrophysics Data System (ADS)

Ridley, Michael; MacKinnon, Angus; Kantorovich, Lev

2017-04-01

Working within the nonequilibrium Green's function formalism, a formula for the two-time current correlation function is derived for the case of transport through a nanojunction in response to an arbitrary time-dependent bias. The one-particle Hamiltonian and the wide-band limit approximation are assumed, enabling us to extract all necessary Green's functions and self-energies for the system, extending the analytic work presented previously [Ridley et al., Phys. Rev. B 91, 125433 (2015), 10.1103/PhysRevB.91.125433]. We show that our expression for the two-time correlation function generalizes the Büttiker theory of shot and thermal noise on the current through a nanojunction to the time-dependent bias case including the transient regime following the switch-on. Transient terms in the correlation function arise from an initial state that does not assume (as is usually done) that the system is initially uncoupled, i.e., our approach is partition free. We show that when the bias loses its time dependence, the long-time limit of the current correlation function depends on the time difference only, as in this case an ideal steady state is reached. This enables derivation of known results for the single-frequency power spectrum and for the zero-frequency limit of this power spectrum. In addition, we present a technique which facilitates fast calculations of the transient quantum noise, valid for arbitrary temperature, time, and voltage scales. We apply this formalism to a molecular wire system for both dc and ac biases, and find a signature of the traversal time for electrons crossing the wire in the time-dependent cross-lead current correlations.
Simulation of the dc Plasma in Carbon Nanotube Growth

NASA Technical Reports Server (NTRS)

Hash, David; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

2003-01-01

A model for the dc plasma used in carbon nanotube growth is presented, and one-dimensional simulations of an acetylene/ammonia/argon system are performed. The effect of dc bias is illustrated by examining electron temperature, electron and ion densities, and neutral densities. Introducing a tungsten filament in the dc plasma, as in hot filament chemical vapor deposition with plasma assistance, shows negligible influence on the system characteristics.
Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection

NASA Astrophysics Data System (ADS)

Nan, Tianxiang; Hui, Yu; Rinaldi, Matteo; Sun, Nian X.

2013-06-01

High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields.
High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balci, Soner; Czaplewski, David A.; Jung, Il Woong

Besides having perfect control on structural features, such as vertical alignment and uniform distribution by fabricating the wires via e-beam lithography and etching process, we also investigated the THz emission from these fabricated nanowires when they are applied DC bias voltage. To be able to apply a voltage bias, an interdigitated gold (Au) electrode was patterned on the high-quality InGaAs epilayer grown on InP substrate bymolecular beam epitaxy. Afterwards, perfect vertically aligned and uniformly distributed nanowires were fabricated in between the electrodes of this interdigitated pattern so that we could apply voltage bias to improve the THz emission. As amore » result, we achieved enhancement in the emitted THz radiation by ~four times, about 12 dB increase in power ratio at 0.25 THz with a DC biased electric field compared with unbiased NWs.« less
DC transport in two-dimensional electron systems under strong microwave illumination

NASA Astrophysics Data System (ADS)

Chakraborty, Shantanu

At low temperature (T) and weak magnetic field ( B), two dimensional electron systems (2DES) can exhibit strong 1/ B-periodic resistance oscillations on application of sufficiently strong microwave radiation. These oscillations are known as microwave induced resistance oscillations (MIROs), MIROs appearing near cyclotron resonance (CR) and its harmonics involve single photon processes and are called integer MIROs while the oscillations near CR subharmonics require multiphoton processes and are called fractional MIROs. Similar strong 1/B periodic resistance oscillations can occur due to strong dc current, and are known as Hall-field resistance oscillations (HIROs). Oscillations also occur for a combination of microwave radiation and strong dc current. In one prominent theory of MIROs, known as the displacement model, electrons make impurity-assisted transitions into higher or lower Landau levels by absorbing or emitting one or more (N) photons. In the presence of combined strong dc current and microwave radiation, electrons make transitions between Landau levels by absorbing or emitting photons followed by a space transition along the applied dc bias. The object of the dissertation is to explore how the different resistance oscillations area affected by strong microwave radiation when multiphoton processes are relevant. We used a coplanar waveguide (CPW) structure deposited on the sample, as opposed to simply placing the sample near the termination of a waveguide as is more the usual practice in this field. The CPW allows us to estimate the AC electric field (EAC) at the sample. In much of the work presented in this thesis we find that higher Nprocesses supersede the competing lower N processes as microwave power is increased. We show this in the presence and in the absence of a strong dc electric field. Finally, we look at the temperature evolution of fractional MIROs to compare the origin of the fractional MIROs with that of integer MIROs.
Low-frequency random telegraphic noise and 1/f noise in the rare-earth manganite Pr0.63Ca0.37MnO3 near the charge-ordering transition

NASA Astrophysics Data System (ADS)

Bid, Aveek; Guha, Ayan; Raychaudhuri, A. K.

2003-05-01

We have studied low-frequency resistance fluctuations (noise) in a single crystal of the rare-earth perovskite manganite Pr0.63Ca0.37MnO3, which shows a charge-ordering transition at a temperature TCO≈245 K. The measurements were made across the charge-ordering transition covering the temperature range 200 K
A CMOS matrix for extracting MOSFET parameters before and after irradiation

NASA Technical Reports Server (NTRS)

Blaes, B. R.; Buehler, M. G.; Lin, Y.-S.; Hicks, K. A.

1988-01-01

An addressable matrix of 16 n- and 16 p-MOSFETs was designed to extract the dc MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs, each with four different geometries that can be biased independently. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Co-60 irradiation results for the n-MOSFETs showed a threshold-voltage shift of -3 mV/krad(Si), whereas the p-MOSFETs showed a shift of 21 mV/krad(Si). The worst-case threshold-voltage shift occurred for the n-MOSFETs, with a gate bias of 5 V during the anneal. For the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5 V on the gate during irradiation. Co-60 test results for other parameters are also presented.

Quantum dynamics of a Josephson junction driven cavity mode system in the presence of voltage bias noise

NASA Astrophysics Data System (ADS)

Wang, Hui; Blencowe, M. P.; Armour, A. D.; Rimberg, A. J.

2017-09-01

We give a semiclassical analysis of the average photon number as well as photon number variance (Fano factor F ) for a Josephson junction (JJ) embedded microwave cavity system, where the JJ is subject to a fluctuating (i.e., noisy) bias voltage with finite dc average. Through the ac Josephson effect, the dc voltage bias drives the effectively nonlinear microwave cavity mode into an amplitude squeezed state (F <1 ), as has been established previously [Armour et al., Phys. Rev. Lett. 111, 247001 (2013), 10.1103/PhysRevLett.111.247001], but bias noise acts to degrade this squeezing. We find that the sensitivity of the Fano factor to bias voltage noise depends qualitatively on which stable fixed point regime the system is in for the corresponding classical nonlinear steady-state dynamics. Furthermore, we show that the impact of voltage bias noise is most significant when the cavity is excited to states with large average photon number.
Study on a negative hydrogen ion source with hot cathode arc discharge.

PubMed

Lin, S H; Fang, X; Zhang, H J; Qian, C; Ma, B H; Wang, H; Li, X X; Zhang, X Z; Sun, L T; Zhang, Z M; Yuan, P; Zhao, H W

2014-02-01

A negative hydrogen (H(-)) ion source with hot cathode arc discharge was designed and fabricated as a primary injector for a 10 MeV PET cyclotron at IMP. 1 mA dc H(-) beam with ɛ N, RMS = 0.08 π mm mrad was extracted at 25 kV. Halbach hexapole was adopted to confine the plasma. The state of arc discharge, the parameters including filament current, arc current, gas pressure, plasma electrode bias, and the ratio of I(e(-))/I(H(-)) were experimentally studied. The discussion on the result, and opinions to improve the source were given.
Analogue Hawking radiation in a dc-SQUID array transmission line.

PubMed

Nation, P D; Blencowe, M P; Rimberg, A J; Buks, E

2009-08-21

We propose the use of a superconducting transmission line formed from an array of direct-current superconducting quantum interference devices for investigating analogue Hawking radiation. Biasing the array with a space-time varying flux modifies the propagation velocity of the transmission line, leading to an effective metric with a horizon. Being a fundamentally quantum mechanical device, this setup allows for investigations of quantum effects such as backreaction and analogue space-time fluctuations on the Hawking process.
Pyroelectric response mechanism of barium strontium titanate ceramics in dielectric bolometer mode: The underlying essence of the enhancing effect of direct current bias field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mao, Chaoliang; Cao, Sheng; Yan, Shiguang

Pyroelectric response mechanism of Ba{sub 0.70}Sr{sub 0.30}TiO{sub 3} ceramics under dielectric bolometer (DB) mode was investigated by dielectric and pyroelectric properties measurement. The variations of total, intrinsic, and induced pyroelectric coefficients (p{sub tot}, p{sub int}, p{sub ind}) with temperatures and bias fields were analyzed. p{sub int} plays the dominant role to p{sub tot} through most of the temperature range and p{sub ind} will be slightly higher than p{sub int} above T{sub 0}. The essence of the enhancing effect of DC bias field on pyroelectric coefficient can be attributed to the high value of p{sub int}. This mechanism is useful formore » the pyroelectric materials (DB mode) applications.« less
A Design of Finite Memory Residual Generation Filter for Sensor Fault Detection

NASA Astrophysics Data System (ADS)

Kim, Pyung Soo

2017-04-01

In the current paper, a residual generation filter with finite memory structure is proposed for sensor fault detection. The proposed finite memory residual generation filter provides the residual by real-time filtering of fault vector using only the most recent finite measurements and inputs on the window. It is shown that the residual given by the proposed residual generation filter provides the exact fault for noisefree systems. The proposed residual generation filter is specified to the digital filter structure for the amenability to hardware implementation. Finally, to illustrate the capability of the proposed residual generation filter, extensive simulations are performed for the discretized DC motor system with two types of sensor faults, incipient soft bias-type fault and abrupt bias-type fault. In particular, according to diverse noise levels and windows lengths, meaningful simulation results are given for the abrupt bias-type fault.
Triple Hybrid Energy Harvesting Interface Electronics

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. M. P. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2016-11-01

This study presents a novel triple hybrid system that combines simultaneously generated power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters for a relatively high power supply capability. In the proposed solution each harvesting source utilizes a distinct power management circuit that generates a DC voltage suitable for combining the three parallel supplies. The circuits are designed and implemented in 180 nm standard CMOS technology, and are terminated with a schottky diode to avoid reverse current flow. The harvested AC signal from the EM harvester is rectified with a self-powered AC-DC doubler, which utilizes active diode structures to minimize the forward- bias voltage drop. The PZT interface electronics utilizes a negative voltage converter as the first stage, followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The ultra-low voltage DC power harvested by the TE generator is stepped up through a charge-pump driven by an LC oscillator with fully- integrated center-tapped differential inductors. Test results indicate that hybrid energy harvesting circuit provides more than 1 V output for load resistances higher than 100 kΩ (10 μW) where the stand-alone harvesting circuits are not able to reach 1 V output. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.
Electronic circuit provides accurate sensing and control of dc voltage

NASA Technical Reports Server (NTRS)

Loftus, W. D.

1966-01-01

Electronic circuit used relay coil to sense and control dc voltage. The control relay is driven by a switching transistor that is biased to cutoff for all input up to slightly less than the threshold level.
Setup for potential bias experiments on the Saha Institute of Nuclear Physics tokamak

NASA Astrophysics Data System (ADS)

Ghosh, J.; Pal, R.; Chattopadhyay, P. K.

1999-12-01

An experimental setup for studying the influence of the radial electric field on very low qa plasma on the Saha Institute of Nuclear Physics tokamak is presented. A high current, high voltage pulsed power supply, using a semiconductor controlled rectifier (SCR) as a dc switch is developed and used to bias a tungsten electrode inserted inside the plasma. The electrode's exposed length and its position inside the plasma are controlled by a double bellows assembly to optimize the electrode-exposed length. We show that using the force commutation method to turn the SCR off to get the power pulse desired has good potential for carrying out similar kinds of studies, especially in a low budget small tokamak.
Gm-Realization of Controlled-Gain Current Follower Transconductance Amplifier

PubMed Central

Tangsrirat, Worapong

2013-01-01

This paper describes the conception of the current follower transconductance amplifier (CFTA) with electronically and linearly current tunable. The newly modified element is realized based on the use of transconductance cells (G m s) as core circuits. The advantage of this element is that the current transfer ratios (i z/i p and i x/i z) can be tuned electronically and linearly by adjusting external DC bias currents. The circuit is designed and analyzed in 0.35 μm TSMC CMOS technology. Simulation results for the circuit with ±1.25 V supply voltages show that it consumes only 0.43 mw quiescent power with 70 MHz bandwidth. As an application example, a current-mode KHN biquad filter is designed and simulated. PMID:24381513
Telescience operations with the solar array module plasma interaction experiment

NASA Technical Reports Server (NTRS)

Wald, Lawrence W.; Bibyk, Irene K.

1995-01-01

The Solar Array Module Plasma Interactions Experiment (SAMPIE) is a flight experiment that flew on the Space Shuttle Columbia (STS-62) in March 1994, as part of the OAST-2 mission. The overall objective of SAMPIE was to determine the adverse environmental interactions within the space plasma of low earth orbit (LEO) on modern solar cells and space power system materials which are artificially biased to high positive and negative direct current (DC) voltages. The two environmental interactions of interest included high voltage arcing from the samples to the space plasma and parasitic current losses. High voltage arcing can cause physical damage to power system materials and shorten expected hardware life. parasitic current losses can reduce power system efficiency because electric currents generated in a power system drain into the surrounding plasma via parasitic resistance. The flight electronics included two programmable high voltage DC power supplies to bias the experiment samples, instruments to measure the surrounding plasma environment in the STS cargo bay, and the on-board data acquisition system (DAS). The DAS provided in-flight experiment control, data storage, and communications through the Goddard Space Flight Center (GSFC) Hitchhiker flight avionics to the GSFC Payload Operations Control Center (POCC). The DAS and the SAMPIE POCC computer systems were designed for telescience operations; this paper will focus on the experiences of the SAMPIE team regarding telescience development and operations from the GSFC POCC during STS-62. The SAMPIE conceptual development, hardware design, and system verification testing were accomplished at the NASA Lewis Research Center (LeRC). SAMPIE was developed under the In-Space Technology Experiment Program (IN-STEP), which sponsors NASA, industry, and university flight experiments designed to enable and enhance space flight technology. The IN-STEP Program is sponsored by the Office of Space Access and Technology (OSAT).
Surface charge mapping with a nanopipette.

PubMed

McKelvey, Kim; Kinnear, Sophie L; Perry, David; Momotenko, Dmitry; Unwin, Patrick R

2014-10-01

Nanopipettes are emerging as simple but powerful tools for probing chemistry at the nanoscale. In this contribution the use of nanopipettes for simultaneous surface charge mapping and topographical imaging is demonstrated, using a scanning ion conductance microscopy (SICM) format. When a nanopipette is positioned close to a surface in electrolyte solution, the direct ion current (DC), driven by an applied bias between a quasi-reference counter electrode (QRCE) in the nanopipette and a second QRCE in the bulk solution, is sensitive to surface charge. The charge sensitivity arises because the diffuse double layers at the nanopipette and the surface interact, creating a perm-selective region which becomes increasingly significant at low ionic strengths (10 mM 1:1 aqueous electrolyte herein). This leads to a polarity-dependent ion current and surface-induced rectification as the bias is varied. Using distance-modulated SICM, which induces an alternating ion current component (AC) by periodically modulating the distance between the nanopipette and the surface, the effect of surface charge on the DC and AC is explored and rationalized. The impact of surface charge on the AC phase (with respect to the driving sinusoidal signal) is highlighted in particular; this quantity shows a shift that is highly sensitive to interfacial charge and provides the basis for visualizing charge simultaneously with topography. The studies herein highlight the use of nanopipettes for functional imaging with applications from cell biology to materials characterization where understanding surface charge is of key importance. They also provide a framework for the design of SICM experiments, which may be convoluted by topographical and surface charge effects, especially for small nanopipettes.
Simple Comb Generator Design for SWaP Constrained Applications

DTIC Science & Technology

2016-01-26

symmetry in the time domain, all the even harmonics are zero. Following the oscillator is a series capacitor and shunt resistor that together form a...filter’s ideal frequency response is represented by H(j2πk) = 1 1 + 1j2πkRC , (2) where R and C are the resistor and capacitor values, respectively. In...Finally, the output capacitor was included to block the DC bias current from the output connector. III. RESULTS For the prototype measurements discussed
Microwave Comb Generator

NASA Technical Reports Server (NTRS)

Sigman, E. H.

1989-01-01

Stable reference tones aid testing and calibration of microwave receivers. Signal generator puts out stable tones in frequency range of 2 to 10 GHz at all multiples of reference input frequency, at any frequency up to 1 MHz. Called "comb generator" because spectral plot resembles comb. DC reverse-bias current switched on and off at 1 MHz to generate sharp pulses in step-recovery diode. Microwave components mounted on back of special connector containing built-in attenuator. Used in testing microwave and spread-spectrum wide-band receivers.
Power Requirements for Bi-Harmonic Amplitude and Bias Modulation Control of a Flapping Wing Micro Air Vehicle

DTIC Science & Technology

2013-03-01

acquisition DC Direct current DHPC Discrete harmonic plant compensation DLMs Dorsal longitudinal muscles DOE Design of experiments DOF Degrees of...nature, would have the inherent benefit of stealth through mimicry of insects. Such a MAV is referred to as a flapping wing micro air vehicle (FWMAV...and discrete harmonic plant compensation (DHPC) to manipulate the wings of the FWMAV. A clear understanding of what research has been done in all of
Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier.

PubMed

Yang, Jong-Ryul; Han, Seong-Tae; Baek, Donghyun

2017-09-09

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m² input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB.
Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier

PubMed Central

Han, Seong-Tae; Baek, Donghyun

2017-01-01

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m2 input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB. PMID:28891927
Development of Simple Designs of Multitip Probe Diagnostic Systems for RF Plasma Characterization

PubMed Central

Naz, M. Y.; Shukrullah, S.; Ghaffar, A.; Rehman, N. U.

2014-01-01

Multitip probes are very useful diagnostics for analyzing and controlling the physical phenomena occurring in low temperature discharge plasmas. However, DC biased probes often fail to perform well in processing plasmas. The objective of the work was to deduce simple designs of DC biased multitip probes for parametric study of radio frequency plasmas. For this purpose, symmetric double probe, asymmetric double probe, and symmetric triple probe diagnostic systems and their driving circuits were designed and tested in an inductively coupled plasma (ICP) generated by a 13.56 MHz radio frequency (RF) source. Using I-V characteristics of these probes, electron temperature, electron number density, and ion saturation current was measured as a function of input power and filling gas pressure. An increasing trend was noticed in electron temperature and electron number density for increasing input RF power whilst a decreasing trend was evident in these parameters when measured against filling gas pressure. In addition, the electron energy probability function (EEPF) was also studied by using an asymmetric double probe. These studies confirmed the non-Maxwellian nature of the EEPF and the presence of two groups of the energetic electrons at low filling gas pressures. PMID:24683326
Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)
Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry

NASA Astrophysics Data System (ADS)

Vishvakarma, S. K.; Beohar, Ankur; Vijayvargiya, Vikas; Trivedi, Priyal

2017-07-01

In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel field-effect transistor (TFET) has been made using distinct device geometry. Firstly, performance parameters of GAA-TFET are analyzed in terms of drain current, gate capacitances, transconductance, source-drain conductance at different radii and channel length. Furthermore, we also produce the geometrical analysis towards the optimized investigation of radio frequency parameters like cut-off frequency, maximum oscillation frequency and gain bandwidth product using a 3D technology computer-aided design ATLAS. Due to band-to-band tunneling based current mechanism unlike MOSFET, gate-bias dependence values as primary parameters of TFET differ. We also analyze that the maximum current occurs when radii of Si is around 8 nm due to high gate controllability over channel with reduced fringing effects and also there is no change in the current of TFET on varying its length from 100 to 40 nm. However current starts to increase when channel length is further reduced for 40 to 30 nm. Both of these trades-offs affect the RF performance of the device. Project supported by the Council of Scientific and Industrial Research (CSIR) Funded Research Project, Grant No. 22/0651/14/EMR-II, Government of India.
Electrothermal DC characterization of GaN on Si MOS-HEMTs

NASA Astrophysics Data System (ADS)

Rodríguez, R.; González, B.; García, J.; Núñez, A.

2017-11-01

DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

Calculation of the radial electric field with RF sheath boundary conditions in divertor geometry

NASA Astrophysics Data System (ADS)

Gui, B.; Xia, T. Y.; Xu, X. Q.; Myra, J. R.; Xiao, X. T.

2018-02-01

The equilibrium electric field that results from an imposed DC bias potential, such as that driven by a radio frequency (RF) sheath, is calculated using a new minimal two-field model in the BOUT++ framework. Biasing, using an RF-modified sheath boundary condition, is applied to an axisymmetric limiter, and a thermal sheath boundary is applied to the divertor plates. The penetration of the bias potential into the plasma is studied with a minimal self-consistent model that includes the physics of vorticity (charge balance), ion polarization currents, force balance with E× B , ion diamagnetic flow (ion pressure gradient) and parallel electron charge loss to the thermal and biased sheaths. It is found that a positive radial electric field forms in the scrape-off layer and it smoothly connects across the separatrix to the force-balanced radial electric field in the closed flux surface region. The results are in qualitative agreement with the experiments. Plasma convection related to the E× B net flow in front of the limiter is also obtained from the calculation.
Magnetoelectric coupling characteristics in multiferroic heterostructures with different thickness of nanocrystalline soft magnetic alloy

NASA Astrophysics Data System (ADS)

Chen, Lei; Wang, Yao

2016-05-01

Magnetoelectric(ME) coupling characteristics in multiferroic heterostructures with different thickness of nanocrystalline soft magnetic alloy has been investigated at low frequency. The ME response with obvious hysteresis, self-biased and dual-peak phenomenon is observed for multiferroic heterostructures, which results from strong magnetic interactions between two ferromagnetic materials with different magnetic properties, magnetostrictions and optimum bias magnetic fields Hdc,opti. The proposed multiferroic heterostructures not only enhance ME coupling significantly, but also broaden dc magnetic bias operating range and overcomes the limitations of narrow bias range. By optimizing the thickness of nanocrystalline soft magnetic alloy Tf, a significantly zero-biased ME voltage coefficient(MEVC) of 14.8mV/Oe (185 mV/cmṡ Oe) at Tf = 0.09 mm can be obtained, which is about 10.8 times as large as that of traditional PZT/Terfenol-D composite with a weak ME coupling at zero bias Hdc,zero. Furthermore, when Tf increases from 0.03 mm to 0.18 mm, the maximum MEVC increases nearly linearly with the increased Tf at Hdc,opti. Additionally, the experimental results demonstrate the ME response for multiferroic heterostructures spreads over a wide magnetic dc bias operating range. The excellent ME performance provides a promising and practicable application for both highly sensitive magnetic field sensors without bias and ME energy harvesters.
Tunable resonant and non-resonant interactions between a phase qubit and LC resonator

NASA Astrophysics Data System (ADS)

Allman, Michael Shane; Whittaker, Jed D.; Castellanos-Beltran, Manuel; Cicak, Katarina; da Silva, Fabio; Defeo, Michael; Lecocq, Florent; Sirois, Adam; Teufel, John; Aumentado, Jose; Simmonds, Raymond W.

2014-03-01

We use a flux-biased radio frequency superconducting quantum interference device (rf SQUID) with an embedded flux-biased direct current (dc) SQUID to generate strong resonant and non-resonant tunable interactions between a phase qubit and a lumped-element resonator. The rf-SQUID creates a tunable magnetic susceptibility between the qubit and resonator providing resonant coupling rates from zero to near the ultra-strong coupling regime. By modulating the magnetic susceptibility, non-resonant parametric coupling achieves rates > 100 MHz . Nonlinearity of the magnetic susceptibility also leads to parametric coupling at subharmonics of the qubit-resonator detuning. Controllable coupling is generically important for constructing coupled-mode systems ubiquitous in physics, useful for both, quantum information architectures and quantum simulators. This work supported by NIST and NSA grant EAO140639.
Charging in the ac Conductance of a Double Barrier Resonant Tunneling Structure

NASA Technical Reports Server (NTRS)

Anantram, M. P.; Saini, Subhash (Technical Monitor)

1998-01-01

There have been many studies of the linear response ac conductance of a double barrier resonant tunneling structure (DBRTS), both at zero and finite dc biases. While these studies are important, they fail to self consistently include the effect of the time dependent charge density in the well. In this paper, we calculate the ac conductance at both zero and finite do biases by including the effect of the time dependent charge density in the well in a self consistent manner. The charge density in the well contributes to both the flow of displacement currents in the contacts and the time dependent potential in the well. We find that including these effects can make a significant difference to the ac conductance and the total ac current is not equal to the simple average of the non-selfconsistently calculated conduction currents in the two contacts. This is illustrated by comparing the results obtained with and without the effect of the time dependent charge density included correctly. Some possible experimental scenarios to observe these effects are suggested.
Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I-V and admittance measurement

NASA Astrophysics Data System (ADS)

Ayarcı Kuruoğlu, Neslihan; Özdemir, Orhan; Bozkurt, Kutsal; Sundaram, Suresh; Salvestrini, Jean-Paul; Ougazzaden, Abdallah; Gaimard, Quentin; Belahsene, Sofiane; Merghem, Kamel; Ramdane, Abderrahim

2017-12-01

The electrical response of gallium nitride (GaN), produced through metal-organic chemical vapor deposition in a p-i-n structure was investigated through temperature-dependent current-voltage (I-V) and admittance measurement. The I-V curves showed double diode behavior together with several distinct regions in which trap-assisted tunnelling current has been identified at low and moderate forward/reverse direction and space charge limited current (SCLC) at large forward/reverse bias. The value of extracted energy (˜200 meV in forward and ˜70 meV in reverse direction) marked the tunnelling entity as electron and heavy hole in the present structure. These values were also obtained in space charge limited regime and considered as minority carriers which might originate the experimentally observed negative capacitance issue at low frequencies over the junction under both forward and reverse bias directions. Analytically derived expression for the admittance in the revised versions of SCLC model was also applied to explain the inductance effect, yielding good fits to the experimentally measured admittance data.
Measured current drainage through holes in various dielectrics up to 2 kilovolts in a dilute plasma

NASA Technical Reports Server (NTRS)

Grier, N. T.; Mckinzie, D. J., Jr.

1972-01-01

The electron current drained from a plasma through approximately 0.05 cm diameter holes in eight possible space applicable dielectrics placed on a probe biased at voltages up to 2000 V dc have been determined both theoretically and experimentally. The dielectrics tested were Parylene C and N, Teflon FEP type C, Teflon TFE, Nomex, quartz 7940 Corning Glass, Mylar A, and Kapton H polymide film. A Laplace field was used to predict an upper limit for the drainage current. The measured current was less than the computed current for quartz, Teflon FEP, and the 0.0123 cm thick sample of Parylene N for all voltages tested. The drainage current through the other dielectrics became equal to or greater than the computed current at a voltage below 2000 V. The magnitudes of the currents were between 0.1 and 10 microamperes for most of the dielectrics.
Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

NASA Astrophysics Data System (ADS)

Winands, G. J. J.; Liu, Z.; Pemen, A. J. M.; van Heesch, E. J. M.; Yan, K.; van Veldhuizen, E. M.

2006-07-01

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh)-1. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh)-1, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.
Electrokinetic Response of Charge-Selective Nanostructured Polymeric Membranes

NASA Astrophysics Data System (ADS)

Schiffbauer, Jarrod; Li, Diya; Gao, Feng; Phillip, William; Chang, Hsueh-Chia

2017-11-01

Nanostructured polymeric membranes, with a tunable pore size and ease of surface molecular functionalization, are a promising material for separations, filtration, and sensing applications. Recently, such membranes have been fabricated wherein the ion selectivity is imparted by self-assembled functional groups through a two-step process. Amine groups are used to provide a positive surface charge and acid groups are used to yield a negative charge. The membranes can be fabricated as either singly-charged or patterned/mosaic membranes, where there are alternating regions of amine- lined or acid-lined pores. We demonstrate that such membranes, in addition to having many features in common with other charge selective membranes (i.e. AMX or Nafion), display a unique single-membrane rectification behavior. This is due to the asymmetric distribution of charged functional groups during the fabrication process. We demonstrate this rectification effect using both dc current-voltage characteristics as well as dc-biased electrical impedance spectroscopy. Furthermore, surface charge changes due to dc concentration polarization and generation of localized pH shifts are monitored using electrical impedance spectroscopy. (formerly at University of Notre Dame).
"It runs in my family …": The association of perceived family history with body dissatisfaction and weight bias internalization among overweight women.

PubMed

Eisenberg, Miriam H; Street, Richard L; Persky, Susan

2017-04-01

Aspects of poor body acceptance (BA), such as internalized weight bias and dissatisfaction with one's shape and size, are the strongest predictors of disordered eating and are associated with reduced engagement in healthy behaviors. Perceiving oneself as having a family history of overweight (PFH) could boost BA by increasing attributions for inherited, biological causes of weight. A community sample of 289 women who were overweight from the Washington, DC metropolitan area who were dissatisfied with their current weight (68% Black; 32% White) enrolled in this study in 2012. PFH of overweight was associated with decreased internalized weight bias among white women and marginally increased body shape satisfaction generally. The relationship between PFH and BA was not explained by biological attributions for weight. Perceptions that overweight runs in one's family can be protective with respect to BA. This is suggestive of the potential benefit of integrating family-based approaches into weight management interventions.
Exploration of the Memory Effect on the Photon-Assisted Tunneling via a Single Quantum Dot:. a Generalized Floquet Theoretical Approach

NASA Astrophysics Data System (ADS)

Chen, Hsing-Ta; Ho, Tak-San; Chu, Shih-I.

The generalized Floquet approach is developed to study memory effect on electron transport phenomena through a periodically driven single quantum dot in an electrode-multi-level dot-electrode nanoscale quantum device. The memory effect is treated using a multi-function Lorentzian spectral density (LSD) model that mimics the spectral density of each electrode in terms of multiple Lorentzian functions. For the symmetric single-function LSD model involving a single-level dot, the underlying single-particle propagator is shown to be related to a 2×2 effective time-dependent Hamiltonian that includes both the periodic external field and the electrode memory effect. By invoking the generalized Van Vleck (GVV) nearly degenerate perturbation theory, an analytical Tien-Gordon-like expression is derived for arbitrary order multi-photon resonance d.c. tunneling current. Numerically converged simulations and the GVV analytical results are in good agreement, revealing the origin of multi-photon coherent destruction of tunneling and accounting for the suppression of the staircase jumps of d.c. current due to the memory effect. Specially, a novel blockade phenomenon is observed, showing distinctive oscillations in the field-induced current in the large bias voltage limit.
Quantum efficiency harmonic analysis of exciton annihilation in organic light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Price, J. S.; Giebink, N. C., E-mail: ncg2@psu.edu

2015-06-29

Various exciton annihilation processes are known to impact the efficiency roll-off of organic light emitting diodes (OLEDs); however, isolating and quantifying their contribution in the presence of other factors such as changing charge balance continue to be a challenge for routine device characterization. Here, we analyze OLED electroluminescence resulting from a sinusoidal dither superimposed on the device bias and show that nonlinearity between recombination current and light output arising from annihilation mixes the quantum efficiency measured at different dither harmonics in a manner that depends uniquely on the type and magnitude of the annihilation process. We derive a series ofmore » analytical relations involving the DC and first harmonic external quantum efficiency that enable annihilation rates to be quantified through linear regression independent of changing charge balance and evaluate them for prototypical fluorescent and phosphorescent OLEDs based on the emitters 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran and platinum octaethylporphyrin, respectively. We go on to show that, in most cases, it is sufficient to calculate the needed quantum efficiency harmonics directly from derivatives of the DC light versus current curve, thus enabling this analysis to be conducted solely from standard light-current-voltage measurement data.« less
Cathode-less gridded ion thrusters for small satellites

NASA Astrophysics Data System (ADS)

Aanesland, Ane

2016-10-01

Electric space propulsion is now a mature technology for commercial satellites and space missions that requires thrust in the order of hundreds of mN, and with available electric power in the order of kW. Developing electric propulsion for SmallSats (1 to 500 kg satellites) are challenging due to the small space and limited available electric power (in the worst case close to 10 W). One of the challenges in downscaling ion and Hall thrusters is the need to neutralize the positive ion beam to prevent beam stalling. This neutralization is achieved by feeding electrons into the downstream space. In most cases hollow cathodes are used for this purpose, but they are fragile and difficult to implement, and in particular for small systems they are difficult to downscale, both in size and electron current. We describe here a new alternative ion thruster that can provide thrust and specific impulse suitable for mission control of satellites as small as 3 kg. The originality of our thruster lies in the acceleration principles and propellant handling. Continuous ion acceleration is achieved by biasing a set of grids with Radio Frequency voltages (RF) via a blocking capacitor. Due to the different mobility of ions and electrons, the blocking capacitor charges up and rectifies the RF voltage. Thus, the ions are accelerated by the self-bias DC voltage. Moreover, due to the RF oscillations, the electrons escape the thruster across the grids during brief instants in the RF period ensuring a full space charge neutralization of the positive ion beam. Due to the RF nature of this system, the space charge limited current increases by almost a factor of 2 compared to classical DC biased grids, which translates into a specific thrust two times higher than for a similar DC system. This new thruster is called Neptune and operates with only one RF power supply for plasma generation, ion acceleration and electron neutralization. We will present the downscaling of this thruster to a 3cm diameter unit well adapted for a CubeSat or SmallSat mission. This work was supported by Agence Nationale de la Recherche under contract ANR-11-IDEX-0004-02 (Plas@Par) and by SATT Paris-Saclay.
SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

NASA Astrophysics Data System (ADS)

Mostovyi, Andrii I.; Solovan, Mykhailo M.; Brus, Viktor V.; Pullerits, Toǧnu; Maryanchuk, Pavlo D.

2018-01-01

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωṡcm, ρ2=10 Ωṡcm, ρ3=40 Ωṡcm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.
High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing techniquemore » commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (~11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Here, tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.« less
High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

DOE PAGES

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; ...

2017-09-11

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing techniquemore » commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (~11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Here, tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.« less
High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

NASA Astrophysics Data System (ADS)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

2017-09-01

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.
Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes. Part 1; DC Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael

1998-01-01

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.
Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael

1999-01-01

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.
Different Signatures of the Total Filling Factor 1 State

NASA Astrophysics Data System (ADS)

Tiemann, Lars; Yoon, Youngsoo; Schmult, Stefan; Hauser, Maik; Dietsche, Werner; von Klitzing, Klaus

2009-03-01

Bringing two 2-dimensional electron systems in close proximity can yield a correlated state as the electrons will experience the presence of the neighboring system. At the individual filling factors of 1/2 this leads to a new double-layer ground state as positive and negative charges from opposite layers couple to excitons. Many remarkable properties were found such as vanishing Hall and longitudinal resistances in the counterflow configuration [1], a resonantly enhanced zero bias tunneling peak [2], and more recently, a critical DC tunneling current and vanishingly small interlayer resistances in DC measurements [3]. We will show how it is possible to combine the results of these three different measurements into a consistent picture. Under certain conditions it is possible to exceed the critical currents but still observe a minimum at total filling factor 1 in the counterflow configuration.[1] M. Kellogg et al. PRL 93, 036801 (2004); E. Tutuc et al. PRL 93, 036802 (2004)[2] I.B. Spielman et al., PRL 87, 036803 (2001)[3] L. Tiemann et al., New Journal of Physics 10, 045018 (2008)

Filterless frequency 12-tupling optical millimeter-wave generation using two cascaded dual-parallel Mach-Zehnder modulators.

PubMed

Zhu, Zihang; Zhao, Shanghong; Zheng, Wanze; Wang, Wei; Lin, Baoqin

2015-11-10

A novel frequency 12-tupling optical millimeter-wave (mm-wave) generation using two cascaded dual-parallel Mach-Zehnder modulators (DP-MZMs) without an optical filter is proposed and demonstrated by computer simulation. By properly adjusting the amplitude and phase of radio frequency (RF) driving signal and the direct current (DC) bias points of two DP-MZMs, a 120 GHz mm-wave with an optical sideband suppression ratio (OSSR) of 25.1 dB and a radio frequency spurious suppression ratio (RFSSR) of 19.1 dB is shown to be generated from a 10 GHz RF driving signal, which largely reduces the response frequency of electronic devices. Furthermore, it is also proved to be valid that even if the phase difference of RF driving signals, the RF driving voltage, and the DC bias voltage deviate from the ideal values to a certain degree, the performance is still acceptable. Since no optical filter is employed to suppress the undesired optical sidebands, a high-spectral-purity mm-wave signal tunable from 48 to 216 GHz can be obtained theoretically when a RF driving signal from 4 to 18 GHz is applied to the DP-MZMs, and the system can be readily implemented in wavelength-division-multiplexing upconversion systems to provide high-quality optical local oscillator signal.
90° switching of polarization in La3+-doped SrBi2Ta2O9 thin films

NASA Astrophysics Data System (ADS)

Liu, J. S.; Zhang, S. R.; Zeng, H. Z.; Fei, W. D.; Du, S. Y.

2006-05-01

The crystal structure and polarization switching behavior of SrBi1.4La0.6Ta2O9 (SBLT) thin films have been studied by x-ray diffraction and piezoresponse force microscopy (PFM), respectively. Compared with SrBi2Ta2O9 (SBT), SBLT thin films show a reduced orthorhombic distortion. The polarization rotation of SBLT thin film, which is driven by negative and positive direct current (dc) biases, has been investigated by a combination of vertical and lateral PFM (VPFM and LPFM, respectively). After dc bias applications, the VPFM image is hardly changed, whereas the LPFM image experiences an obvious variation. It is believed that such difference is caused by 90° polarization switching. However, this kind of switching can be only realized by the exchange of a axis and b axis. By virtue of the reduced orthorhombic distortion, the a-b exchange in SBLT is easier than that in SBT. Unfortunately, stress is created due to the 90° polarization switching in SBLT thin films. The internal stress is found to increase with the repeated switching cycles, and so the polarization reorientation in SBLT is constrained. Thus, the fatigue resistance of SBLT thin films is not thought to be as good as that of SBT.
Improving emissions inventories in Mexico through systematic analysis of model performance along C-130 and DC-8 flight tracks during MILAGRO

NASA Astrophysics Data System (ADS)

Mena-Carrasco, M.; Carmichael, G. R.; Campbell, J. E.; Tang, Y.; Chai, T.

2007-05-01

During the MILAGRO campaign in March 2006 the University of Iowa provided regional air quality forecasting for scientific flight planning for the C-130 and DC-8. Model performance showed positive bias of ozone prediction (~15ppbv), associated to overpredictions in precursor concentrations (~2.15 ppbv NOy and ~1ppmv ARO1). Model bias showed a distinct geographical pattern in which the higher values were in and near Mexico City. Newer runs in which NOx and VOC emissions were decreased improved ozone prediction, decreasing bias and increasing model correlation, at the same time reducing regional bias over Mexico. This work will evaluate model performance using the newly published Mexico National Emissions Inventory, and the introduction of data assimilation to recover emissions scaling factors to optimize model performance. Finally the results of sensitivity runs showing the regional impact of Mexico City emissions on ozone concentrations will be shown, along with the influence of Mexico City aerosol concentrations on regional photochemistry.
Silicon nanowire array architecture for heterojunction electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovan, M. M., E-mail: m.solovan@chnu.edu.ua; Brus, V. V.; Mostovyi, A. I.

2017-04-15

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.
Study on a negative hydrogen ion source with hot cathode arc discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, S. H., E-mail: linshh@impcas.ac.cn; Fang, X.; University of Chinese Academy of Sciences, Beijing 100039

2014-02-15

A negative hydrogen (H{sup −}) ion source with hot cathode arc discharge was designed and fabricated as a primary injector for a 10 MeV PET cyclotron at IMP. 1 mA dc H{sup −} beam with ε {sub N,} {sub RMS} = 0.08 π mm mrad was extracted at 25 kV. Halbach hexapole was adopted to confine the plasma. The state of arc discharge, the parameters including filament current, arc current, gas pressure, plasma electrode bias, and the ratio of I{sub e{sup −}}/I{sub H{sup −}} were experimentally studied. The discussion on the result, and opinions to improve the source were given.
Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Subsurface imaging of carbon nanotube networks in polymers with DC-biased multifrequency dynamic atomic force microscopy.

PubMed

Thompson, Hank T; Barroso-Bujans, Fabienne; Herrero, Julio Gomez; Reifenberger, Ron; Raman, Arvind

2013-04-05

The characterization of dispersion and connectivity of carbon nanotube (CNT) networks inside polymers is of great interest in polymer nanocomposites in new material systems, organic photovoltaics, and in electrodes for batteries and supercapacitors. We focus on a technique using amplitude modulation atomic force microscopy (AM-AFM) in the attractive regime of operation, using both single and dual mode excitation, which upon the application of a DC tip bias voltage allows, via the phase channel, the in situ, nanoscale, subsurface imaging of CNT networks dispersed in a polymer matrix at depths of 10-100 nm. We present an in-depth study of the origins of phase contrast in this technique and demonstrate that an electrical energy dissipation mechanism in the Coulomb attractive regime is key to the formation of the phase contrast which maps the spatial variations in the local capacitance and resistance due to the CNT network. We also note that dual frequency excitation can, under some conditions, improve the contrast for such samples. These methods open up the possibility for DC-biased amplitude modulation AFM to be used for mapping the variations in local capacitance and resistance in nanocomposites with conducting networks.
Unexpected Nonlinear Effects in Superconducting Transition-Edge Sensors

NASA Technical Reports Server (NTRS)

Sadleir, John

2016-01-01

When a normal metal transitions into the superconducting state the DC resistance drops from a finite value to zero over some finite transition width in temperature, current, and magnetic field. Superconducting transition-edge sensors (TESs) operate within this transition region and uses resistive changes to measure deposited thermal energy. This resistive transition is not perfectly smooth and a wide range of TES designs and materials show sub-structure in the resistive transition (as seen in smooth nonmonotonic behavior, jump discontinuities, and hysteresis in the devices current-voltage relation and derivatives of the resistance with respect to temperature, bias current, and magnetic field). TES technology has advanced to the point where for many applications this structure is the limiting factor in performance and optimization consists of finding operating points away from these structures. For example, operating at or near this structure can lead to nonlinearity in the detectors response and gain scale, limit the spectral range of the detector by limiting the usable resistive range, and degrade energy resolution. The origin of much of this substructure is unknown. This presentation investigates a number of possible sources in turn. First we model the TES as a superconducting weak-link and solve for the characteristic differential equations current and voltage time dependence. We find:(1) measured DC biased current-voltage relationship is the time-average of a much higher frequency limit cycle solution.(2) We calculate the fundamental frequency and estimate the power radiated from the TES treating the bias leads as an antennae.(3) The solution for a set of circuit parameters becomes multivalued leading to current transitions between levels.(4)The circuit parameters can change the measure resistance and mask the true critical current. As a consequence the TES resistance surface is not just a function of temperature, current, and magnetic field but is also a function of the circuit elements (such as shunt resistor, SQUID inductance, and capacitor values). In other words, same device measured in different electrical circuits will have a different resistive surface in temperature, current, and magnetic field. Next we consider that at the transition temperature of a superconductor both the magnetic penetration depth and coherence length are divergent. As a consequence these important characteristic length scales are changing with operating point. We present measurements on devices showing commensurate behavior between these characteristic lengths and the length scale of added normal metal structures. Reordering of proximity vortices leads to discontinuities and irreversibility of the current-voltage curves. Last we consider a weak-link TES including both thermal activated resistance effects and the effect of the magnetic penetration depth being a function of temperature and magnetic field. We derive its impact on the resistive transition surface and the important device parameters a and b.
Exchange bias effect in CoAl2O4

NASA Astrophysics Data System (ADS)

Mohanty, Prachi; Marik, Sourav; Singh, Ravi P.

2018-04-01

Herein, we report the appearance of a significant exchange bias (EB) effect for the highly frustrated spinel material CoAl2O4. It shows a large value of frustration parameter as observed from the dc susceptibility measurements. CoAl2O4 exhibits the exchange bias effect below 8 K when it is cooled in the presence of a magnetic field. Detailed magnetization measurements indicate that the exchange bias properties of this compound are associated with the frustration present in this material.
Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henderson, T.S.; Ikalainen, P.K.

1995-12-31

The authors report a two-temperature RF bias stress test on nominal 1.2 W 7.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTF`s of 2020 and 1340 hours were obtained at Tj = 218{degrees}C and 245{degrees}C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.
Control of nanoparticle size and amount by using the mesh grid and applying DC-bias to the substrate in silane ICP-CVD process

NASA Astrophysics Data System (ADS)

Yoo, Seung-Wan; Hwang, Nong-Moon; You, Shin-Jae; Kim, Jung-Hyung; Seong, Dae-Jin

2017-11-01

The effect of applying a bias to the substrate on the size and amount of charged crystalline silicon nanoparticles deposited on the substrate was investigated in the inductively coupled plasma chemical vapor deposition process. By inserting the grounded grid with meshes above the substrate, the region just above the substrate was separated from the plasma. Thereby, crystalline Si nanoparticles formed by the gas-phase reaction in the plasma could be deposited directly on the substrate, successfully avoiding the formation of a film. Moreover, the size and the amount of deposited nanoparticles could be changed by applying direct current bias to the substrate. When the grid of 1 × 1-mm-sized mesh was used, the nanoparticle flux was increased as the negative substrate bias increased from 0 to - 50 V. On the other hand, when a positive bias was applied to the substrate, Si nanoparticles were not deposited at all. Regardless of substrate bias voltages, the most frequently observed nanoparticles synthesized with the grid of 1 × 1-mm-sized mesh had the size range of 10-12 nm in common. When the square mesh grid of 2-mm size was used, as the substrate bias was increased from - 50 to 50 V, the size of the nanoparticles observed most frequently increased from the range of 8-10 to 40-45 nm but the amount that was deposited on the substrate decreased.
Simulation and measurement of a Ka-band HTS MMIC Josephson junction mixer

NASA Astrophysics Data System (ADS)

Zhang, Ting; Pegrum, Colin; Du, Jia; Guo, Yingjie Jay

2017-01-01

We report modeling and simulation results for a Ka band high-temperature superconducting (HTS) monolithic microwave integrated circuit (MMIC) Josephson junction mixer. A Verilog-A model of a Josephson junction is established and imported into the system simulator to realize a full HTS MMIC circuit simulation containing the HTS passive circuit models. Impedance matching optimization between the junction and passive devices is investigated. Junction DC I-V characteristics, current and local oscillator bias conditions and mixing performance are simulated and compared with the experimental results. Good agreement is obtained between the simulation and measurement results.
Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.
A computational study of the effects of DC electric fields on non-premixed counterflow methane-air flames

NASA Astrophysics Data System (ADS)

Belhi, Memdouh; Lee, Bok Jik; Bisetti, Fabrizio; Im, Hong G.

2017-12-01

Two-dimensional axisymmetric simulations for counterflow non-premixed methane-air flames were undertaken as an attempt to reproduce the experimentally observed electro-hydrodynamic effect, also known as the ionic wind effect, on flames. Incompressible fluid dynamic solver was implemented with a skeletal chemical kinetic mechanism and transport property evaluations. The simulation successfully reproduced the key characteristics of the flames subjected to DC bias voltages at different intensity and polarity. Most notably, the simulation predicted the flame positions and showed good qualitative agreement with experimental data for the current-voltage curve. The flame response to the electric field with positive and negative polarity exhibited qualitatively different characteristics. In the negative polarity of the configuration considered, a non-monotonic variation of the current with the voltage was observed, along with the existence of an unstable regime at an intermediate voltage level. With positive polarity, a typical monotonic current-voltage curve was obtained. This behavior was attributed to the asymmetry in the distribution of the positive and negative ions resulting from ionization processes. The present study demonstrated that the mathematical and computational models for the ion chemistry, transport, and fluid dynamics were able to describe the key processes responsible for the flame-electric field interaction.
Ozone production by a dc corona discharge in air contaminated by n-heptane

NASA Astrophysics Data System (ADS)

Pekárek, S.

2008-01-01

Beneficial purposes of ozone such as elimination of odours, harmful bacteria and mildew can be used for transportation of food, fruits and vegetables with the aim to extend their storage life. To date the main technique used for this purpose in the transportation of these commodities, e.g. by trucks, was cooling. Here a combination of cooling together with the supply of ozone into containers with these commodities is considered. For these purposes we studied the effect of air contamination by n-heptane (part of automotive fuels) and humidity on ozone production by a dc hollow needle to mesh corona discharge. We found that, for both polarities of the needle electrode, addition of n-heptane to air (a) decreases ozone production; (b) causes discharge poisoning to occur at lower current than for air; (c) does not substantially influence the current for which the ozone production reaches the maximum. Finally the maximum ozone production for the discharge in air occurs for the same current as the maximum ozone production for the discharge contaminated by n-heptane. We also found that humidity decreases ozone production from air contaminated by n-heptane irrespective of the polarity of the coronating needle electrode. This dependence is stronger for the discharge with the needle biased positively.
FET commutated current-FED inverter

NASA Technical Reports Server (NTRS)

Rippel, Wally E. (Inventor); Edwards, Dean B. (Inventor)

1983-01-01

A shunt switch comprised of a field-effect transistor (Q.sub.1) is employed to commutate a current-fed inverter (10) using thyristors (SCR1, SCR2) or bijunction transistors (Q.sub.2, Q.sub.3) in a full bridge (1, 2, 3, 4) or half bridge (5, 6) and transformer (T.sub.1) configuration. In the case of thyristors, a tapped inverter (12) is employed to couple the inverter to a dc source to back bias the thyristors during commutation. Alternatively, a commutation power supply (20) may be employed for that purpse. Diodes (D.sub.1, D.sub.2) in series with some voltage dropping element (resistor R.sub.12 or resistors R.sub.1, R.sub.2 or Zener diodes D.sub.4, D.sub.5) are connected in parallel with the thyristors in the half bridge and transformer configuration to assure sharing the back bias voltage. A clamp circuit comprised of a winding (18) negatively coupled to the inductor and a diode (D.sub.3) return stored energy from the inductor to the power supply for efficient operation with buck or boost mode.
Conduction in In 2O 3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces

DOE PAGES

Veal, B. W.; Eastman, J. A.

2017-03-01

Thin film In 2O 3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In 2O 3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes inmore » the contact resistance.« less
Role of the blocking capacitor in control of ion energy distributions in pulsed capacitively coupled plasmas sustained in Ar/CF{sub 4}/O{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Sang-Heon, E-mail: ssongs@umich.edu; Kushner, Mark J., E-mail: mjkush@umich.edu

2014-03-15

In plasma etching for microelectronics fabrication, the quality of the process is in large part determined by the ability to control the ion energy distribution (IED) onto the wafer. To achieve this control, dual frequency capacitively coupled plasmas (DF-CCPs) have been developed with the goal of separately controlling the magnitude of the fluxes of ions and radicals with the high frequency (HF) and the shape of the IED with the low frequency (LF). In steady state operation, plasma properties are determined by a real time balance between electron sources and losses. As such, for a given geometry, pressure, and frequencymore » of operation, the latitude for controlling the IED may be limited. Pulsed power is one technique being investigated to provide additional degrees of freedom to control the IED. In one configuration of a DF-CCP, the HF power is applied to the upper electrode and LF power is applied to the lower electrode which is serially connected to a blocking capacitor (BC) which generates a self dc-bias. In the steady state, the value of the dc-bias is, in fact, constant. During pulsed operation, however, there may be time modulation of the dc-bias which provides an additional means to control the IED. In this paper, IEDs to the wafer in pulsed DF-CCPs sustained in Ar/CF{sub 4}/O{sub 2} are discussed with results from a two-dimensional plasma hydrodynamics model. The IED can be manipulated depending on whether the LF or HF power is pulsed. The dynamic range of the control can be tuned by the dc-bias generated on the substrate, whose time variation depends on the size of the BC during pulsed operation. It was found that high energy ions can be preferentially produced when pulsing the HF power and low energy ions are preferentially produced when pulsing the LF power. A smaller BC value which allows the bias to follow the change in charged particle fluxes produces a larger dynamic range with which to control IEDs.« less
An economical fluorescence detector for lab-on-a-chip devices with a light emitting photodiode and a low-cost avalanche photodiode.

PubMed

Wu, Jing; Liu, Xianhu; Wang, Lili; Dong, Lijun; Pu, Qiaosheng

2012-01-21

An economical fluorescence detector was developed with an LED as the exciting source and a low-cost avalanche photodiode (APD) module as a photon sensor. The detector was arranged in an epifluorescence configuration using a microscope objective (20× or 40×) and a dichroic mirror. The low-cost APD was biased by a direct current (DC) high voltage power supply at 121 V, which is much lower than that normally used for a PMT. Both DC and square wave (SW) supplies were used to power the LED and different data treatment protocols, such as simple average for DC mode, software based lock-in amplification and time specific average for SW mode, were tested to maximize the signal-to-noise ratio. Using an LED at a DC mode with simple data averaging, a limit of detection of 0.2 nmol L(-1) for sodium fluorescein was attained, which is among the lowest ever achieved with an LED as an excitation source. The detector was successfully used in both capillary and chip electrophoresis. The most significant advantages of the detector are the compact size and low cost of its parts. The aim of the work is to prove that widely available, low-cost components for civilian use can be successfully used for miniaturized analytical devices.

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

NASA Astrophysics Data System (ADS)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-12-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.
Design, Optimization and Fabrication of a 28.3 THz Nano-Rectenna for Infrared Detection and Rectification

PubMed Central

Gadalla, M. N.; Abdel-Rahman, M.; Shamim, Atif

2014-01-01

The increasing energy demands of the world's population and the quickly diminishing fossil fuel reserves together suggest the urgent need to secure long-lasting alternative and renewable energy resources. Here, we present a THz antenna integrated with a rectifier (rectenna) for harvesting infrared energy. We demonstrate a resonant bowtie antenna that has been optimized to produce highly enhanced localized fields at the bow tip. To benefit from this enhancement, the rectifier is realized between the overlapped antenna's arms using a 0.7 nm copper oxide. The thin film diode offers low zero bias resistance of 500 Ω, thus improving the impedance matching with the antenna. In addition, the rectenna prototype demonstrates high zero bias responsivity (4 A/W), which is critical in producing DC current directly from THz signals without the application of an external electric source, particularly for energy harvesting applications. PMID:24599374
Design, Optimization and Fabrication of a 28.3 THz Nano-Rectenna for Infrared Detection and Rectification

NASA Astrophysics Data System (ADS)

Gadalla, M. N.; Abdel-Rahman, M.; Shamim, Atif

2014-03-01

The increasing energy demands of the world's population and the quickly diminishing fossil fuel reserves together suggest the urgent need to secure long-lasting alternative and renewable energy resources. Here, we present a THz antenna integrated with a rectifier (rectenna) for harvesting infrared energy. We demonstrate a resonant bowtie antenna that has been optimized to produce highly enhanced localized fields at the bow tip. To benefit from this enhancement, the rectifier is realized between the overlapped antenna's arms using a 0.7 nm copper oxide. The thin film diode offers low zero bias resistance of 500 Ω, thus improving the impedance matching with the antenna. In addition, the rectenna prototype demonstrates high zero bias responsivity (4 A/W), which is critical in producing DC current directly from THz signals without the application of an external electric source, particularly for energy harvesting applications.
Very high frequency spectroscopy and tuning of a single-cooper-pair transistor with an on-chip generator.

PubMed

Billangeon, P-M; Pierre, F; Bouchiat, H; Deblock, R

2007-03-23

A single-Cooper-pair transistor (SCPT) is coupled capacitively to a voltage biased Josephson junction, used as a high-frequency generator. Thanks to the high energy of photons generated by the Josephson junction, transitions between energy levels, not limited to the first two levels, were induced and the effect of this irradiation on the dc Josephson current of the SCPT was measured. The phase and gate bias dependence of energy levels of the SCPT at high energy is probed. Because the energies of photons can be higher than the superconducting gap we can induce not only transfer of Cooper pairs but also transfer of quasiparticles through the island of the SCPT, thus controlling the poisoning of the SCPT. This can both decrease and increase the average Josephson energy of the SCPT: its supercurrent is then controlled by high-frequency irradiation.
Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

PubMed

Villa, E; Aja, B; de la Fuente, L; Artal, E

2016-01-01

This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.
Design, optimization and fabrication of a 28.3 THz nano-rectenna for infrared detection and rectification.

PubMed

Gadalla, M N; Abdel-Rahman, M; Shamim, Atif

2014-03-06

The increasing energy demands of the world's population and the quickly diminishing fossil fuel reserves together suggest the urgent need to secure long-lasting alternative and renewable energy resources. Here, we present a THz antenna integrated with a rectifier (rectenna) for harvesting infrared energy. We demonstrate a resonant bowtie antenna that has been optimized to produce highly enhanced localized fields at the bow tip. To benefit from this enhancement, the rectifier is realized between the overlapped antenna's arms using a 0.7 nm copper oxide. The thin film diode offers low zero bias resistance of 500 Ω, thus improving the impedance matching with the antenna. In addition, the rectenna prototype demonstrates high zero bias responsivity (4 A/W), which is critical in producing DC current directly from THz signals without the application of an external electric source, particularly for energy harvesting applications.
Design and dSpace interfacing of current fed high gain dc to dc boost converter for low voltage applications

NASA Astrophysics Data System (ADS)

Mukhopadhyay, Debraj; Das, Subhrajit; Arunkumar, G.; Elangovan, D.; Ragunath, G.

2017-11-01

In this paper a current fed interleaved DC - DC boost converter which has an isolated topology and used for high voltage step up is proposed. A basic DC to DC boost converter converts uncontrolled DC voltage into controlled DC voltage of higher magnitude. Whereas this topology has the advantages of lower input current ripple, lesser output voltage, lesser stress on switches, faster transient response, improved reliability and much lesser electromagnetic emission over the conventional DC to DC boost converter. Most important benefit of this interleaved DC to DC boost converter is much higher efficiency. The input current is divided into two paths, substantially ohmic loss (I2R) and inductor ac loss gets reduced and finally the system achieves much higher efficiency. With recent mandates on energy saving interleaved DC to DC boost converter may be used as a very powerful tool to maintain good power density keeping the input current manageable. Higher efficiency also allows higher switching frequency and as a result the topology becomes more compact and cost friendly. The proposed topology boosts 48v DC to 200 V DC. Switching frequency is 100 kHz and PSIM 9.1 Platform has been used for the simulation.
An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.
Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, D.C.; Fox, R.J.

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.
Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, Dimitrios C.; Fox, Richard J.

1981-01-01

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.
Time-lag properties of corona streamer discharges between impulse sphere and dc needle electrodes under atmospheric air conditions.

PubMed

Okano, Daisuke

2013-02-01

In this study of corona streamer discharges from an impulse generator using a dc power supply, the relationship of the discharge time-lag with the dc bias voltage between the sphere-to-needle electrodes under atmospheric conditions is investigated. Devices utilizing corona discharges have been used to purify air or water, destroy bacteria, and to remove undesirable substances, and in order to achieve fast response times and high power efficiencies in such devices, it is important to minimize the time-lag of the corona discharge. Our experimental results show that (a) the discharge path of a negatively biased needle electrode will be straighter than that of a positively biased needle and (b) the discharge threshold voltage in both the positive and the negative needle electrodes is nearly equal to 33 kV. By expressing the discharge voltage as a power function of time-lag, the extent of corona generation can be quantitatively specified using the exponent of this power function. The observed behavior of a corona streamer discharge between the negative spherical and the positive needle electrodes indicates that the largest power exponent is associated with the shortest time-lag, owing to the reduction in the statistical time-lag in the absence of a formative time-lag.
Time-lag properties of corona streamer discharges between impulse sphere and dc needle electrodes under atmospheric air conditions

NASA Astrophysics Data System (ADS)

Okano, Daisuke

2013-02-01

In this study of corona streamer discharges from an impulse generator using a dc power supply, the relationship of the discharge time-lag with the dc bias voltage between the sphere-to-needle electrodes under atmospheric conditions is investigated. Devices utilizing corona discharges have been used to purify air or water, destroy bacteria, and to remove undesirable substances, and in order to achieve fast response times and high power efficiencies in such devices, it is important to minimize the time-lag of the corona discharge. Our experimental results show that (a) the discharge path of a negatively biased needle electrode will be straighter than that of a positively biased needle and (b) the discharge threshold voltage in both the positive and the negative needle electrodes is nearly equal to 33 kV. By expressing the discharge voltage as a power function of time-lag, the extent of corona generation can be quantitatively specified using the exponent of this power function. The observed behavior of a corona streamer discharge between the negative spherical and the positive needle electrodes indicates that the largest power exponent is associated with the shortest time-lag, owing to the reduction in the statistical time-lag in the absence of a formative time-lag.
Creating orbiting vorticity vectors in magnetic particle suspensions through field symmetry transitions–a route to multi-axis mixing

DOE PAGES

Martin, James E.; Solis, Kyle Jameson

2015-11-09

It has recently been reported that two types of triaxial electric or magnetic fields can drive vorticity in dielectric or magnetic particle suspensions, respectively. The first type-symmetry -- breaking rational fields -- consists of three mutually orthogonal fields, two alternating and one dc, and the second type -- rational triads -- consists of three mutually orthogonal alternating fields. In each case it can be shown through experiment and theory that the fluid vorticity vector is parallel to one of the three field components. For any given set of field frequencies this axis is invariant, but the sign and magnitude ofmore » the vorticity (at constant field strength) can be controlled by the phase angles of the alternating components and, at least for some symmetry-breaking rational fields, the direction of the dc field. In short, the locus of possible vorticity vectors is a 1-d set that is symmetric about zero and is along a field direction. In this paper we show that continuous, 3-d control of the vorticity vector is possible by progressively transitioning the field symmetry by applying a dc bias along one of the principal axes. Such biased rational triads are a combination of symmetry-breaking rational fields and rational triads. A surprising aspect of these transitions is that the locus of possible vorticity vectors for any given field bias is extremely complex, encompassing all three spatial dimensions. As a result, the evolution of a vorticity vector as the dc bias is increased is complex, with large components occurring along unexpected directions. More remarkable are the elaborate vorticity vector orbits that occur when one or more of the field frequencies are detuned. As a result, these orbits provide the basis for highly effective mixing strategies wherein the vorticity axis periodically explores a range of orientations and magnitudes.« less
Using Impedance Spectroscopy to Assess the Viability of the Rapid Chloride Test for Determining Concrete Conductivity

PubMed Central

Snyder, K. A.; Ferraris, C.; Martys, N. S.; Garboczi, E. J.

2000-01-01

The suitability of using the initial current from the rapid chloride test (ASTM C 1202) to determine specimen conductivity is tested using impedance spectroscopy with a frequency spectrum of 10 Hz to 1 MHz. The specimen conductivity has an analytical relationship to specimen diffusivity and so is a useful quantity in service life prediction. Measurements made on specimens of different lengths indicate that the total charge passed during the six hour conduction test carried out according to ASTM C 1202 is not a direct measure of specimen conductivity. Further, ohmic heating during the 6 hour test makes it nearly impossible to directly measure any specimen transport property from the results. The total charge passed during the 6 hour conduction test is, therefore, not a reliable quantity for service life prediction. Results indicate that the direct current (dc) measurement of resistance using a voltage of 60 V is sufficient to overwhelm polarization effects, thereby yielding an accurate estimate of the true specimen conductivity. Impedance spectroscopy measurements also indicate that corrosion may form on the brass electrodes, adding bias to a conductivity estimate based upon a dc measurement. PMID:27551618
DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasper, M.; Gramse, G.; Hoffmann, J.

We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part ofmore » the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.« less
Novel bidirectional DC-DC converters based on the three-state switching cell

NASA Astrophysics Data System (ADS)

da Silva Júnior, José Carlos; Robles Balestero, Juan Paulo; Lessa Tofoli, Fernando

2016-05-01

It is well known that there is an increasing demand for bidirectional DC-DC converters for applications that range from renewable energy sources to electric vehicles. Within this context, this work proposes novel DC-DC converter topologies that use the three-state switching cell (3SSC), whose well-known advantages over conventional existing structures are ability to operate at high current levels, while current sharing is maintained by a high frequency transformer; reduction of cost and dimensions of magnetics; improved distribution of losses, with consequent increase of global efficiency and reduction of cost associated to the need of semiconductors with lower current ratings. Three distinct topologies can be derived from the 3SSC: one DC-DC converter with reversible current characteristic able to operate in the first and second quadrants; one DC-DC converter with reversible voltage characteristic able to operate in the first and third quadrants and one DC-DC converter with reversible current and voltage characteristics able to operate in four quadrants. Only the topology with bidirectional current characteristic is analysed in detail in terms of the operating stages in both nonoverlapping and overlapping modes, while the design procedure of the power stage elements is obtained. In order to validate the theoretical assumptions, an experimental prototype is also implemented, so that relevant issues can be properly discussed.
Research and Construction of DC Energy Measurement Traceability Technology

NASA Astrophysics Data System (ADS)

Zhi, Wang; Maotao, Yang; Jing, Yang

2018-02-01

With the implementation of energy saving and emission reduction policies, DC energy metering has been widely used in many fields. In view of the lack of a DC energy measurementtraceability system, in combination with the process of downward measurement transfer in relation to the DC charger-based field calibration technology and DC energy meter and shunt calibration technologies, the paper proposed DC fast charging, high DC, small DC voltage output and measuring technologies, and built a time-based plan by converting high DC voltage into low voltage and high current into low current and then into low voltage, leaving DC energy traceable to national standards in terms of voltage, current and time and thus filling in the gap in DC energy measurement traceability.
Qualitative modeling of silica plasma etching using neural network

NASA Astrophysics Data System (ADS)

Kim, Byungwhan; Kwon, Kwang Ho

2003-01-01

An etching of silica thin film is qualitatively modeled by using a neural network. The process was characterized by a 23 full factorial experiment plus one center point, in which the experimental factors and ranges include 100-800 W radio-frequency source power, 100-400 W bias power and gas flow rate ratio CHF3/CF4. The gas flow rate ratio varied from 0.2 to 5.0. The backpropagation neural network (BPNN) was trained on nine experiments and tested on six experiments, not pertaining to the original training data. The prediction ability of the BPNN was optimized as a function of the training parameters. Prediction errors are 180 Å/min and 1.33, for the etch rate and anisotropy models, respectively. Physical etch mechanisms were estimated from the three-dimensional plots generated from the optimized models. Predicted response surfaces were consistent with experimentally measured etch data. The dc bias was correlated to the etch responses to evaluate its contribution. Both the source power (plasma density) and bias power (ion directionality) strongly affected the etch rate. The source power was the most influential factor for the etch rate. A conflicting effect between the source and bias powers was noticed with respect to the anisotropy. The dc bias played an important role in understanding or separating physical etch mechanisms.
Microwave Fiber-Optics Delay Line.

DTIC Science & Technology

1980-01-01

frequency response. We observed the anticipated modulation resonance and its dependence on the dc bias level. However, we did not have a scanning Fabry - Perot ...could not be determined accurately because a scanning Fabry - Perot was not available. However, from the various experimental observations and the rise time...Hitachi HLP-2400U BH laser and a Rockwell heterojunction photodiode o. ......... 26 11 Demodulated rf power versus detector dc photocurrent
Wall charging of a helicon antenna wrapped plasma filled dielectric tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barada, Kshitish K., E-mail: kbarada@physics.ucla.edu; Chattopadhyay, P. K., E-mail: pkchatto@ipr.res.in; Ghosh, J.

2015-01-15

Dielectric wall charging of a cylindrical glass wall surrounded by a helicon antenna of 18 cm length is measured in a linear helicon plasma device with a diverging magnetic field. The ions because of their lesser mobility do not respond to the high frequency electric field and the electrons charge the wall to a negative DC potential also known as the DC self-bias. The wall potential in this device is characterized for different neutral pressure, magnetic field, and radio frequency (RF) power. Axial variation of wall potential shows higher self-bias potentials near the antenna rings. Ion magnetization in the source chambermore » increases both wall charging and plasma potential of the source due to confinement.« less

AC/DC current ratio in a current superimposition variable flux reluctance machine

NASA Astrophysics Data System (ADS)

Kohara, Akira; Hirata, Katsuhiro; Niguchi, Noboru; Takahara, Kazuaki

2018-05-01

We have proposed a current superimposition variable flux reluctance machine for traction motors. The torque-speed characteristics of this machine can be controlled by increasing or decreasing the DC current. In this paper, we discuss an AC/DC current ratio in the current superimposition variable flux reluctance machine. The structure and control method are described, and the characteristics are computed using FEA in several AC/DC ratios.
Experimental Investigation of a Broadband High-Temperature Superconducting Terahertz Mixer Operating at Temperatures Between 40 and 77 K

NASA Astrophysics Data System (ADS)

Gao, Xiang; Du, Jia; Zhang, Ting; Jay Guo, Y.; Foley, Cathy P.

2017-11-01

This paper presents a systematic investigation of a broadband thin-film antenna-coupled high-temperature superconducting (HTS) terahertz (THz) harmonic mixer at relatively high operating temperature from 40 to 77 K. The mixer device chip was fabricated using the CSIRO established step-edge YBa2Cu3O7-x (YBCO) Josephson junction technology, packaged in a well-designed module and cooled in a temperature adjustable cryocooler. Detailed experimental characterizations were carried out for the broadband HTS mixer at both the 200 and 600 GHz bands in harmonic mixing mode. The DC current-voltage characteristics (IVCs), bias current condition, local oscillator (LO) power requirement, frequency response, as well as conversion efficiency under different bath temperatures were thoroughly investigated for demonstrating the frequency down-conversion performance.
Characteristics of III-V Semiconductor Devices at High Temperature

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Young, Paul G.; Taub, Susan R.; Alterovitz, Samuel A.

1994-01-01

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.
Role of thermal heating on the voltage induced insulator-metal transition in VO2.

PubMed

Zimmers, A; Aigouy, L; Mortier, M; Sharoni, A; Wang, Siming; West, K G; Ramirez, J G; Schuller, Ivan K

2013-02-01

We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a dc voltage or dc current, the local temperature reaches the transition temperature indicating that Joule heating plays a predominant role. This has critical implications for the understanding of the dc voltage or dc current induced insulator-metal transition and has a direct impact on applications which use dc voltage or dc current to externally drive the transition.
Raman Channel Temperature Measurement of SiC MESFET as a Function of Ambient Temperature and DC Power

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Eldridge, Jeffrey J.; Krainsky, Isay L.

2009-01-01

Raman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to the ambient temperature, is varied from 25 C to 450 C, and the transistor is biased with VDS=10V and IDS of 50 mA and 100 mA. It is shown that the junction temperature is approximately 52 and 100 C higher than the ambient temperature for the DC power of 500 and 1000 mW, respectively.
Study of the Dependence on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

NASA Technical Reports Server (NTRS)

Bandler, Simon

2011-01-01

At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in the AC bias configuration. For x-ray photons at 6keV the AC biased pixel shows a best energy resolution of 3.7eV, which is about a factor of 2 worse than the energy resolution observed in identical DC-biased pixels. To better understand the reasons of this discrepancy, we investigated the detector performance as a function of temperature, bias working point and applied magnetic field. A strong periodic dependence of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recent weak-link behaviour observed inTES microcalorimeters.
Space charge limited current emission for a sharp tip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Y. B., E-mail: zhuyingbin@gmail.com; Ang, L. K., E-mail: ricky-ang@sutd.edu.sg

In this paper, we formulate a self-consistent model to study the space charge limited current emission from a sharp tip in a dc gap. The tip is assumed to have a radius in the order of 10s nanometer. The electrons are emitted from the tip due to field emission process. It is found that the localized current density J at the apex of the tip can be much higher than the classical Child Langmuir law (flat surface). A scaling of J ∝ V{sub g}{sup 3/2}/D{sup m}, where V{sub g} is the gap bias, D is the gap size, and m = 1.1–1.2more » (depending on the emission area or radius) is proposed. The effects of non-uniform emission and the spatial dependence of work function are presented.« less
High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

2008-11-01

Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.
Influence of bias electric field on elastic waves propagation in piezoelectric layered structures.

PubMed

Burkov, S I; Zolotova, O P; Sorokin, B P

2013-08-01

Theoretical and computer investigations of acoustic wave propagation in piezoelectric layered structures, subjected to the dc electric field influence have been fulfilled. Analysis of the dispersive parameters of elastic waves propagation in the BGO/fused silica and fused silica/LiNbO3 piezoelectric layered structures for a number of variants of dc electric field application has been executed. Transformation of bulk acoustic wave into SAW type mode under the dc electric field influence has been found. Possibility to control the permission or prohibition of the wave propagation by the dc electric field application and the appropriate choice of the layer and substrate materials has been discussed. Copyright © 2013 Elsevier B.V. All rights reserved.
The influence of superimposed DC current on electrical and spectroscopic characteristics of HiPIMS discharge

NASA Astrophysics Data System (ADS)

Zuo, Xiao; Chen, Rende; Liu, Jingzhou; Ke, Peiling; Wang, Aiying

2018-01-01

The electrical characteristics and spectroscopic properties have been comprehensively investigated in a DC superimposed high power impulse magnetron sputtering (DC-HiPIMS) deposition system in this paper. The influence of superimposed DC current on the variation of target and substrate current waveforms, active species and electron temperatures with pulse voltages are focused. The peak target currents in DC-HiPIMS are lower than in HiPIMS. The time scales of the two main discharge processes like ionization and gas rarefaction in DC-HiPIMS are analyzed. When the pulse voltage is higher than 600 V, the gas rarefaction effect becomes apparent. Overall, the ionization process is found to be dominant in the initial ˜100 μs during each pulse. The active species of Ar and Cr in DC-HiPIMS are higher than in HiPIMS unless that the pulse voltage reaches 900 V. However, the ionization degree in HiPIMS exceeds that in DC-HiPIMS at around 600 V. The electron temperature calculated by modified Boltzmann plot method based on corona model has a precipitous increase from 0.87 to 25.0 eV in HiPIMS, but varies mildly after the introduction of the superimposed DC current. Additionally, the current from plasma flowing to the substrate is improved when a DC current is superimposed with HiPIMS.
A flexible curvilinear electromagnetic filter for direct current cathodic arc source.

PubMed

Dai, Hua; Shen, Yao; Li, Liuhe; Li, Xiaoling; Cai, Xun; Chu, Paul K

2007-09-01

Widespread applications of direct current (dc) cathodic arc deposition are hampered by macroparticle (MP) contamination, although a cathodic arc offers many unique merits such as high ionization rate, high deposition rate, etc. In this work, a flexible curvilinear electromagnetic filter is described to eliminate MPs from a dc cathodic arc source. The filter which has a relatively large size with a minor radius of about 85 mm is suitable for large cathodes. The filter is open and so the MPs do not rebound inside the filter. The flexible design allows the ions to be transported from the cathode to the sample surface optimally. Our measurements with a saturated ion current probe show that the efficiency of this flexible filter reaches about 2.0% (aluminum cathode) when the filter current is about 250 A. The MP density measured from TiN films deposited using this filter is two to three orders of magnitude less than that from films deposited with a 90 degrees duct magnetic filter and three to four orders of magnitude smaller than those deposited without a filter. Furthermore, our experiments reveal that the potential of the filter coil and the magnetic field on the surface of the cathode are two important factors affecting the efficacy of the filter. Different biasing potentials can enhance the efficiency to up to 12-fold, and a magnetic field at about 4.0 mT can improve it by a factor of 2 compared to 5.4 mT.
Waves, particles, and interactions in reduced dimensions

NASA Astrophysics Data System (ADS)

Zhang, Yiming

This thesis presents a set of experiments that study the interplay between the wave-particle duality of electrons and the interaction effects in systems of reduced dimensions. Both dc transport and measurements of current noise have been employed in the studies; in particular, techniques for efficiently measuring current noise have been developed specifically for these experiments. The first four experiments study current noise auto- and cross correlations in various mesoscopic devices, including quantum point contacts, single and double quantum dots, and graphene devices. In quantum point contacts, shot noise at zero magnetic field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus where shot noise vanishes, agrees with a model of bias-dependent electron heating. In a three-lead single quantum dot and a capacitively coupled double quantum dot, sign reversal of noise cross correlations have been observed in the Coulomb blockade regime, and found to be tunable by gate voltages and source-drain bias. In the limit of weak output tunneling, cross correlations in the three-lead dot are found to be proportional to the two-lead noise in excess of the Poissonian value. These results can be reproduced with master equation calculations that include multi-level transport in the single dot, and inter-dot charging energy in the double dot. Shot noise measurements in single-layer graphene devices reveal a Fano factor independent of carrier type and density, device geometry, and the presence of a p-n junction. This result contrasts with theory for ballistic graphene sheets and junctions, suggesting that the transport is disorder dominated. The next two experiments study magnetoresistance oscillations in electronic Fabry-Perot interferometers in the integer quantum Hall regime. Two types of resistance oscillations, as a function of perpendicular magnetic field and gate voltages, in two interferometers of different sizes can be distinguished by three experimental signatures. The oscillations observed in the small (2.0 mum2) device are understood to arise from Coulomb blockade, and those observed in the big (18 mum2) device from Aharonov-Bohm interference. Nonlinear transport in the big device reveals a checkerboard-like pattern of conductance oscillations as a function of dc bias and magnetic field. Edge-state velocities extracted from the checkerboard data are compared to model calculations and found to be consistent with a crossover from skipping orbits at low fields to E⃗ x B⃗ drift at high fields. Suppression of visibility as a function of bias and magnetic field is accounted for by including energy- and field-dependent dephasing of edge electrons.
Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovic, Svetozar; Upadhyay, Janardan; Vuskovic, Leposava

2017-12-26

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the innermore » wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.« less
Pulsed discharge ionization source for miniature ion mobility spectrometers

DOEpatents

Xu, Jun; Ramsey, J. Michael; Whitten, William B.

2004-11-23

A method and apparatus is disclosed for flowing a sample gas and a reactant gas (38, 43) past a corona discharge electrode (26) situated at a first location in an ion drift chamber (24), applying a pulsed voltage waveform comprising a varying pulse component and a dc bias component to the corona discharge electrode (26) to cause a corona which in turn produces ions from the sample gas and the reactant gas, applying a dc bias to the ion drift chamber (24) to cause the ions to drift to a second location (25) in the ion drift chamber (24), detecting the ions at the second location (25) in the drift chamber (24), and timing the period for the ions to drift from the corona discharge electrode to the selected location in the drift chamber.
Possible origin of nonlinear conductivity and large dielectric constant in the commensurate charge-density-wave phase of 1 T -TaS2

NASA Astrophysics Data System (ADS)

Ma, Yongchang; Hou, Yanhui; Lu, Cuimin; Li, Lijun; Petrovic, Cedomir

2018-05-01

The electric field dependence of the dielectric properties and the nonlinear conductance of 1 T -TaS2 below 50 K has been investigated. A large dielectric constant of about 104 is obtained up to 107 Hz, which cannot be attributed to hopping of the localized carriers alone, the collective excitations of the commensurate charge-density-wave must be another contributor. The dielectric spectra disperse slightly in our measured temperature and frequency range. At a moderate dc bias field, the real part of the dielectric constant ɛ1(ω ) decreases. We propose that the separation of bound soliton-antisoliton pairs may be a contributor to the reduction of ɛ1(ω ) and the accompanying nonlinear conductivity with increasing dc bias.
DC-Compensated Current Transformer.

PubMed

Ripka, Pavel; Draxler, Karel; Styblíková, Renata

2016-01-20

Instrument current transformers (CTs) measure AC currents. The DC component in the measured current can saturate the transformer and cause gross error. We use fluxgate detection and digital feedback compensation of the DC flux to suppress the overall error to 0.15%. This concept can be used not only for high-end CTs with a nanocrystalline core, but it also works for low-cost CTs with FeSi cores. The method described here allows simultaneous measurements of the DC current component.
Study of dual radio frequency capacitively coupled plasma: an analytical treatment matched to an experiment

NASA Astrophysics Data System (ADS)

Saikia, P.; Bhuyan, H.; Escalona, M.; Favre, M.; Wyndham, E.; Maze, J.; Schulze, J.

2018-01-01

The behavior of a dual frequency capacitively coupled plasma (2f CCP) driven by 2.26 and 13.56 MHz radio frequency (rf) source is investigated using an approach that integrates a theoretical model and experimental data. The basis of the theoretical analysis is a time dependent dual frequency analytical sheath model that casts the relation between the instantaneous sheath potential and plasma parameters. The parameters used in the model are obtained by operating the 2f CCP experiment (2.26 MHz + 13.56 MHz) in argon at a working pressure of 50 mTorr. Experimentally measured plasma parameters such as the electron density, electron temperature, as well as the rf current density ratios are the inputs of the theoretical model. Subsequently, a convenient analytical solution for the output sheath potential and sheath thickness was derived. A comparison of the present numerical results is done with the results obtained in another 2f CCP experiment conducted by Semmler et al (2007 Plasma Sources Sci. Technol. 16 839). A good quantitative correspondence is obtained. The numerical solution shows the variation of sheath potential with the low and high frequency (HF) rf powers. In the low pressure plasma, the sheath potential is a qualitative measure of DC self-bias which in turn determines the ion energy. Thus, using this analytical model, the measured values of the DC self-bias as a function of low and HF rf powers are explained in detail.
The electrical asymmetry effect in a multi frequency geometrically asymmetric capacitively coupled plasma: A study by a nonlinear global model

NASA Astrophysics Data System (ADS)

Saikia, P.; Bhuyan, H.; Escalona, M.; Favre, M.; Bora, B.; Kakati, M.; Wyndham, E.; Rawat, R. S.; Schulze, J.

2018-05-01

We investigate the electrical asymmetry effect (EAE) and the current dynamics in a geometrically asymmetric capacitively coupled radio frequency plasma driven by multiple consecutive harmonics based on a nonlinear global model. The discharge symmetry is controlled via the EAE, i.e., by varying the total number of harmonics and tuning the phase shifts ( θ k ) between them. Here, we systematically study the EAE in a low pressure (4 Pa) argon discharge with different geometrical asymmetries driven by a multifrequency rf source consisting of 13.56 MHz and its harmonics. We find that the geometrical asymmetry strongly affects the absolute value of the DC self-bias voltage, but its functional dependence on θ k is similar at different values of the geometrical asymmetry. Also, the values of the DC self-bias are enhanced by adding more consecutive harmonics. The voltage drop across the sheath at the powered and grounded electrode is found to increase/decrease, respectively, with the increase in the number of harmonics of the fundamental frequency. For the purpose of validating the model, its outputs are compared with the results obtained in a geometrically and electrically asymmetric 2f capacitively coupled plasmas experiment conducted by Schuengel et al. [J. Appl. Phys. 112, 053302 (2012)]. Finally, we study the self-excitation of nonlinear plasma series resonance oscillations and its dependence on the geometrical asymmetry as well as the phase angles between the driving frequencies.
A Design Methodology for Switched-Capacitor DC-DC Converters

DTIC Science & Technology

2009-05-21

phase piezoelectric energy harvesters ,” IEEE International Solid-State Circuits Conference, pp. 302–303, Feb. 2008. [20] P. Hazucha, G. Schrom, J. Hahn...2007. [42] Y. K. Ramadass and A. P. Chandrakasan, “An efficient piezoelectric energy- harvesting interface circuit using a bias-flip rectifier and...made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to
Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Optimization of spin-torque switching using AC and DC pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dunn, Tom; Kamenev, Alex; Fine Theoretical Physics Institute, University of Minnesota, Minneapolis, Minnesota 55455

2014-06-21

We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.
DC-Compensated Current Transformer †

PubMed Central

Ripka, Pavel; Draxler, Karel; Styblíková, Renata

2016-01-01

Instrument current transformers (CTs) measure AC currents. The DC component in the measured current can saturate the transformer and cause gross error. We use fluxgate detection and digital feedback compensation of the DC flux to suppress the overall error to 0.15%. This concept can be used not only for high-end CTs with a nanocrystalline core, but it also works for low-cost CTs with FeSi cores. The method described here allows simultaneous measurements of the DC current component. PMID:26805830
Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

NASA Technical Reports Server (NTRS)

Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.;

2012-01-01

At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

Two-range magnetoelectric sensor

NASA Astrophysics Data System (ADS)

Bichurin, M.; Petrov, V.; Leontyev, V.; Saplev, A.

2017-01-01

In this study, we present a two-range magnetoelectric ME sensor design comprising of permendur (alloy of Fe-Co-V), nickel, and lead zirconate titanate (PZT) laminate composite. A systematic study was conducted to clarify the contribution of magnetostrictive layers variables to the ME response over the applied range of magnetic bias field. The two-range behavior was characterized by opposite sign of the ME response when magnetic dc bias is in different sub-ranges. The ME coefficient as a function of magnetic bias field was found to be dependent on the laminate composite structure.
Tunable biasing magnetic field design of ferrite tuner for ICRF heating system in EAST

NASA Astrophysics Data System (ADS)

Manman, XU; Yuntao, SONG; Gen, CHEN; Yanping, ZHAO; Yuzhou, MAO; Guang, LIU; Zhen, PENG

2017-11-01

Ion cyclotron range of frequency (ICRF) heating has been used in tokamaks as one of the most successful auxiliary heating tools and has been adopted in the EAST. However, the antenna load will fluctuate with the change of plasma parameters in the ICRF heating process. To ensure the steady operation of the ICRF heating system in the EAST, fast ferrite tuner (FFT) has been carried out to achieve real-time impedance matching. For the requirements of the FFT impedance matching system, the magnet system of the ferrite tuner (FT) was designed by numerical simulations and experimental analysis, where the biasing magnetic circuit and alternating magnetic circuit were the key researched parts of the ferrite magnet. The integral design goal of the FT magnetic circuit is that DC bias magnetic field is 2000 Gs and alternating magnetic field is ±400 Gs. In the FTT, E-type magnetic circuit was adopted. Ferrite material is NdFeB with a thickness of 30 mm by setting the working point of NdFeB, and the ampere turn of excitation coil is 25 through the theoretical calculation and simulation analysis. The coil inductance to generate alternating magnetic field is about 7 mH. Eddy-current effect has been analyzed, while the magnetic field distribution has been measured by a Hall probe in the medium plane of the biasing magnet. Finally, the test results show the good performance of the biasing magnet satisfying the design and operating requirements of the FFT.
RF Guns for Generation of Polarized Electron Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Dowell, D.H.

2005-11-09

Several accelerators, including the SLC, JLAB, Mainz, Bates/MIT, and Bonn have successfully operated for medium and high energy physics experiments using polarized electron beams generated by dc-biased guns employing GaAs photocathodes. Since these guns have all used a bias on the order of 100 kV, the longitudinal emittance of the extracted bunch is rather poor. Downstream rf bunching systems increase the transverse emittance. An rf gun with a GaAs photocathode would eliminate the need for separate rf bunchers, resulting in a simpler injection system. In addition, the thermal emittance of GaAs-type cathodes is significantly lower than for other photocathode materials.more » The environmental requirements for operating activated GaAs photocathodes cannot be met by rf guns as currently designed and operated. These requirements, including limits on vacuum and electron back bombardment, are discussed in some detail. Modifications to actual and proposed rf gun designs that would allow these requirements to be met are presented.« less
Effect of dc field on ac-loss peak in a commercial Bi:2223/Ag tape

NASA Astrophysics Data System (ADS)

Öztürk, Ali; Düzgün, İbrahim; Çelebi, Selahattin

2017-12-01

Measurements of the ac susceptibility in a commercial Bi:2223/Ag tape for some different ac magnetic field amplitudes, Hac, in the presence of bias magnetic field Hdc directed along Hac are reported. It is found that the peak values of the imaginary component of ac susceptibility χ″max versus Hac trace a valley for the orientation where applied field Ha perpendicular to wide face of the tape total. We note that the observation of the valley depends on various parameters such as field dependence parameter n in the critical current density, in the simple power law expression jc = α(T)/Bn, choice of the bias field Hdc together with selected ac field amplitudes Hac, and dimension and geometry of sample studied. Our calculations based on critical state model with jc = α(1 - T/Tcm)p/Bn using the fitting parameters of n = 0.25, p = 2.2, Tcm = 108 K gives quite good results to compare the experimental and calculated curves.
T/R switch design for short-range measurements, part 6.1A

NASA Technical Reports Server (NTRS)

Yu, B.

1984-01-01

The positive intrinsic negative (PIN) diode switch which is designed to protect the receiver from burnout or damage on transmission and channel the echo signal to the receiver on reception is outlined. The receiver must be protected firmly. A schematic diagram of a transformer rectifier (TR-ATR) switch for the Urbana Radar is shown. The T/R switch consists of a half wavelength coaxial cavity with tuning condenser and PIN diodes. Two UM4300 PIN diodes were mounted between the inner and outer conductor. The dc biasing voltage required for the PIN diodes is supplied by a control circuit. On transmission, the PIN diodes are forward biased to about 0.5 amperes. On reception, about 10 volts reverse voltage is applied to the diodes, which produces an initial reverse current to speed the recovery time. The T/R switch characteristics are estimated and the result of testing at different peak transmitter powers from 410 kW to 1500 kW is shown.
Research on Intelligent Control System of DC SQUID Magnetometer Parameters for Multi-channel System

NASA Astrophysics Data System (ADS)

Chen, Hua; Yang, Kang; Lu, Li; Kong, Xiangyan; Wang, Hai; Wu, Jun; Wang, Yongliang

2018-07-01

In a multi-channel SQUID measurement system, adjusting device parameters to optimal condition for all channels is time-consuming. In this paper, an intelligent control system is presented to determine the optimal working point of devices which is automatic and more efficient comparing to the manual one. An optimal working point searching algorithm is introduced as the core component of the control system. In this algorithm, the bias voltage V_bias is step scanned to obtain the maximal value of the peak-to-peak current value I_pp of the SQUID magnetometer modulation curve. We choose this point as the optimal one. Using the above control system, more than 30 weakly damped SQUID magnetometers with area of 5 × 5 mm^2 or 10 × 10 mm^2 are adjusted and a 36-channel magnetocardiography system perfectly worked in a magnetically shielded room. The average white flux noise is 15 {μ Φ }_0/Hz^{1/2}.
Research on Intelligent Control System of DC SQUID Magnetometer Parameters for Multi-channel System

NASA Astrophysics Data System (ADS)

Chen, Hua; Yang, Kang; Lu, Li; Kong, Xiangyan; Wang, Hai; Wu, Jun; Wang, Yongliang

2018-03-01

In a multi-channel SQUID measurement system, adjusting device parameters to optimal condition for all channels is time-consuming. In this paper, an intelligent control system is presented to determine the optimal working point of devices which is automatic and more efficient comparing to the manual one. An optimal working point searching algorithm is introduced as the core component of the control system. In this algorithm, the bias voltage V_bias is step scanned to obtain the maximal value of the peak-to-peak current value I_pp of the SQUID magnetometer modulation curve. We choose this point as the optimal one. Using the above control system, more than 30 weakly damped SQUID magnetometers with area of 5 × 5 mm^2 or 10 × 10 mm^2 are adjusted and a 36-channel magnetocardiography system perfectly worked in a magnetically shielded room. The average white flux noise is 15 μΦ_0/Hz^{1/2}.
A near-field scanning microwave microscope for characterization of inhomogeneous photovoltaics.

PubMed

Weber, J C; Schlager, J B; Sanford, N A; Imtiaz, A; Wallis, T M; Mansfield, L M; Coakley, K J; Bertness, K A; Kabos, P; Bright, V M

2012-08-01

We present a near-field scanning microwave microscope (NSMM) that has been configured for imaging photovoltaic samples. Our system incorporates a Pt-Ir tip inserted into an open-ended coaxial cable to form a weakly coupled resonator, allowing the microwave reflection S(11) signal to be measured across a sample over a frequency range of 1 GHz - 5 GHz. A phase-tuning circuit increased impedance-measurement sensitivity by allowing for tuning of the S(11) minimum down to -78 dBm. A bias-T and preamplifier enabled simultaneous, non-contact measurement of the DC tip-sample current, and a tuning fork feedback system provided simultaneous topographic data. Light-free tuning fork feedback provided characterization of photovoltaic samples both in the dark and under illumination at 405 nm. NSMM measurements were obtained on an inhomogeneous, third-generation Cu(In,Ga)Se(2) (CIGS) sample. The S(11) and DC current features were found to spatially broaden around grain boundaries with the sample under illumination. The broadening is attributed to optically generated charge that becomes trapped and changes the local depletion of the grain boundaries, thereby modifying the local capacitance. Imaging provided by the NSMM offers a new RF methodology to resolve and characterize nanoscale electrical features in photovoltaic materials and devices.
A novel concept of fault current limiter based on saturable core in high voltage DC transmission system

NASA Astrophysics Data System (ADS)

Yuan, Jiaxin; Zhou, Hang; Gan, Pengcheng; Zhong, Yongheng; Gao, Yanhui; Muramatsu, Kazuhiro; Du, Zhiye; Chen, Baichao

2018-05-01

To develop mechanical circuit breaker in high voltage direct current (HVDC) system, a fault current limiter is required. Traditional method to limit DC fault current is to use superconducting technology or power electronic devices, which is quite difficult to be brought to practical use under high voltage circumstances. In this paper, a novel concept of high voltage DC transmission system fault current limiter (DCSFCL) based on saturable core was proposed. In the DCSFCL, the permanent magnets (PM) are added on both up and down side of the core to generate reverse magnetic flux that offset the magnetic flux generated by DC current and make the DC winding present a variable inductance to the DC system. In normal state, DCSFCL works as a smoothing reactor and its inductance is within the scope of the design requirements. When a fault occurs, the inductance of DCSFCL rises immediately and limits the steepness of the fault current. Magnetic field simulations were carried out, showing that compared with conventional smoothing reactor, DCSFCL can decrease the high steepness of DC fault current by 17% in less than 10ms, which verifies the feasibility and effectiveness of this method.
Design of air-gapped magnetic-core inductors for superimposed direct and alternating currents

NASA Technical Reports Server (NTRS)

Ohri, A. K.; Wilson, T. G.; Owen, H. A., Jr.

1976-01-01

Using data on standard magnetic-material properties and standard core sizes for air-gap-type cores, an algorithm designed for a computer solution is developed which optimally determines the air-gap length and locates the quiescent point on the normal magnetization curve so as to yield an inductor design with the minimum number of turns for a given ac voltage and frequency and with a given dc bias current superimposed in the same winding. Magnetic-material data used in the design are the normal magnetization curve and a family of incremental permeability curves. A second procedure, which requires a simpler set of calculations, starts from an assigned quiescent point on the normal magnetization curve and first screens candidate core sizes for suitability, then determines the required turns and air-gap length.
Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions

NASA Astrophysics Data System (ADS)

Parkhomenko, Hryhorii; Solovan, Mykhaylo; Brus, Viktor; Maystruk, Eduard; Maryanchuk, Pavlo

2018-01-01

p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using "light" I-V characteristics, we determined the open-circuit voltage Voc=0.42 V, the short-circuit current Isc=57.5 μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80 mW.
Influence of the Biasing Scheme on the Performance of Au/SrTiO3/LaAlO3 Thin Film Conductor/Ferroelectric Tunable Ring Resonators

NASA Technical Reports Server (NTRS)

VanKeuls, F. W.; Romanofsky, R. R.; Bohman, D. Y.; Miranda, F. A.

1998-01-01

The performance of gold/SrTio3 /LaAlO3 conductor/ferroelectric/dielectric side-coupled, tunable ring resonators at K-band frequencies is presented. The tunability of these rings arises from the sensitivity of the relative dielectric constant (Er) of SrTiO 3 to changes in temperature and dc electric fields (E). We observed that the change in F-, which takes place by biasing the ring up to 450 V alters the effective dielectric constant (e-eff) of the circuit resulting in a 3k resonant frequency shift of nearly 12 % at 77 K. By applying a separate dc bias between the microstrip line and the ring, one can optimize their coupling to obtain bandstop resonators with unloaded quality factors (Q(sub o)) as high as 12,000. The 31 resonance was tuned from 15.75 to 17.41 GHz while keeping Q. above 768 over this range. The relevance of these results for practical microwave components will be discussed.
Palliative Care and Hospice Interventions in Decompensated Cirrhosis and Hepatocellular Carcinoma: A Rapid Review of Literature.

PubMed

Mudumbi, Sandhya K; Bourgeois, Claire E; Hoppman, Nicholas A; Smith, Catherine H; Verma, Manisha; Bakitas, Marie A; Brown, Cynthia J; Markland, Alayne D

2018-04-26

Patients with decompensated cirrhosis (DC) and/or hepatocellular carcinoma (HCC) have a high symptom burden and mortality and may benefit from palliative care (PC) and hospice interventions. Our aim was to search published literature to determine the impact of PC and hospice interventions for patients with DC/HCC. We searched electronic databases for adults with DC/HCC who received PC, using a rapid review methodology. Data were extracted for study design, participant and intervention characteristics, and three main groups of outcomes: healthcare resource utilization (HRU), end-of-life care (EOLC), and patient-reported outcomes. Of 2466 results, eight were included in final results. There were six retrospective cohort studies, one prospective cohort, and one quality improvement study. Five of eight studies had a high risk of bias and seven studied patients with HCC. A majority found a reduction in HRU (total cost of hospitalization, number of emergency department visits, hospital, and critical care admissions). Some studies found an impact on EOLC, including location of death (less likely to die in the hospital) and resuscitation (less likely to have resuscitation). One study evaluated survival and found hospice had no impact and another showed improvement of symptom burden. Studies included suggest that PC and hospice interventions in patients with DC/HCC reduce HRU, impact EOLC, and improve symptoms. Given the few number of studies, heterogeneity of interventions and outcomes, and high risk of bias, further high-quality research is needed on PC and hospice interventions with a greater focus on DC.
Fully parameterized model of a voltage-driven capacitive coupled micromachined ohmic contact switch for RF applications

NASA Astrophysics Data System (ADS)

Heeb, Peter; Tschanun, Wolfgang; Buser, Rudolf

2012-03-01

A comprehensive and completely parameterized model is proposed to determine the related electrical and mechanical dynamic system response of a voltage-driven capacitive coupled micromechanical switch. As an advantage over existing parameterized models, the model presented in this paper returns within few seconds all relevant system quantities necessary to design the desired switching cycle. Moreover, a sophisticated and detailed guideline is given on how to engineer a MEMS switch. An analytical approach is used throughout the modelling, providing representative coefficients in a set of two coupled time-dependent differential equations. This paper uses an equivalent mass moving along the axis of acceleration and a momentum absorption coefficient. The model describes all the energies transferred: the energy dissipated in the series resistor that models the signal attenuation of the bias line, the energy dissipated in the squeezed film, the stored energy in the series capacitor that represents a fixed separation in the bias line and stops the dc power in the event of a short circuit between the RF and dc path, the energy stored in the spring mechanism, and the energy absorbed by mechanical interaction at the switch contacts. Further, the model determines the electrical power fed back to the bias line. The calculated switching dynamics are confirmed by the electrical characterization of the developed RF switch. The fabricated RF switch performs well, in good agreement with the modelled data, showing a transition time of 7 µs followed by a sequence of bounces. Moreover, the scattering parameters exhibit an isolation in the off-state of >8 dB and an insertion loss in the on-state of <0.6 dB up to frequencies of 50 GHz. The presented model is intended to be integrated into standard circuit simulation software, allowing circuit engineers to design the switch bias line, to minimize induced currents and cross actuation, as well as to find the mechanical structure dimensions necessary for the desired switching time and actuation voltage waveform. Moreover, process related design rules can be automatically verified.
Electrical properties of PMMA ion-implanted with low-energy Si+ beam

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Gueorguiev, V. K.; Ivanov, Tz E.; Marinov, Y. G.; Ivanov, V. G.; Faulques, E.

2010-01-01

The electrical properties of polymethylmethacrylate (PMMA) after implantation with silicon ions accelerated to an energy of 50 keV are studied under DC electric bias field. The electrical response of the formed material is examined as a function of Si+ fluence in the range 1014 - 1017 cm-2. The carbonaceous subsurface region of the Si+-implanted PMMA displays a significant DC conductivity and a sizable field effect that can be used for electronic applications.
(GameChanger) Multifunctional Design of Hybrid Composites of Load Bearing Antennas

DTIC Science & Technology

2011-06-01

5 . Solvent Effect in Dynamic Superstructures from Au Nanoparticles and CdTe Nanowires: Experimental Observation and Theoretical Description , J. Phys...the magnetic bias is transverse to the propagation direction and the plane of the thin films . Such field displacement effect is used in several...within the structure, resulting from the material properties of the media. The magnetoelectric thin film with a DC magnetic field bias serves as a
Influence of finite geometrical asymmetry of the electrodes in capacitively coupled radio frequency plasma

NASA Astrophysics Data System (ADS)

Bora, B.; Soto, L.

2014-08-01

Capacitively coupled radio frequency (CCRF) plasmas are widely studied in last decades due to the versatile applicability of energetic ions, chemically active species, radicals, and also energetic neutral species in many material processing fields including microelectronics, aerospace, and biology. A dc self-bias is known to generate naturally in geometrically asymmetric CCRF plasma because of the difference in electrode sizes known as geometrical asymmetry of the electrodes in order to compensate electron and ion flux to each electrode within one rf period. The plasma series resonance effect is also come into play due to the geometrical asymmetry and excited several harmonics of the fundamental in low pressure CCRF plasma. In this work, a 13.56 MHz CCRF plasma is studied on the based on the nonlinear global model of asymmetric CCRF discharge to understand the influences of finite geometrical asymmetry of the electrodes in terms of generation of dc self-bias and plasma heating. The nonlinear global model on asymmetric discharge has been modified by considering the sheath at the grounded electrode to taking account the finite geometrical asymmetry of the electrodes. The ion density inside both the sheaths has been taken into account by incorporating the steady-state fluid equations for ions considering that the applied rf frequency is higher than the typical ion plasma frequency. Details results on the influences of geometrical asymmetry on the generation of dc self-bias and plasma heating are discussed.

Ion energy distributions in bipolar pulsed-dc discharges of methane measured at the biased cathode

NASA Astrophysics Data System (ADS)

Corbella, C.; Rubio-Roy, M.; Bertran, E.; Portal, S.; Pascual, E.; Polo, M. C.; Andújar, J. L.

2011-02-01

The ion fluxes and ion energy distributions (IED) corresponding to discharges in methane (CH4) were measured in time-averaged mode with a compact retarding field energy analyser (RFEA). The RFEA was placed on a biased electrode at room temperature, which was powered by either radiofrequency (13.56 MHz) or asymmetric bipolar pulsed-dc (250 kHz) signals. The shape of the resulting IED showed the relevant populations of ions bombarding the cathode at discharge parameters typical in the material processing technology: working pressures ranging from 1 to 10 Pa and cathode bias voltages between 100 and 200 V. High-energy peaks in the IED were detected at low pressures, whereas low-energy populations became progressively dominant at higher pressures. This effect is attributed to the transition from collisionless to collisional regimes of the cathode sheath as the pressure increases. On the other hand, pulsed-dc plasmas showed broader IED than RF discharges. This fact is connected to the different working frequencies and the intense peak voltages (up to 450 V) driven by the pulsed power supply. This work improves our understanding in plasma processes at the cathode level, which are of crucial importance for the growth and processing of materials requiring controlled ion bombardment. Examples of industrial applications with these requirements are plasma cleaning, ion etching processes during fabrication of microelectronic devices and plasma-enhanced chemical vapour deposition of hard coatings (diamond-like carbon, carbides and nitrides).
In vitro and in vivo comparisons of constant resistance AC iontophoresis and DC iontophoresis.

PubMed

Li, S Kevin; Higuchi, William I; Zhu, Honggang; Kern, Steven E; Miller, David J; Hastings, Matthew S

2003-09-04

A previous in vitro constant electrical resistance alternating current (AC) iontophoresis study with human epidermal membrane (HEM) and a model neutral permeant has shown less inter- and intra-sample variability in iontophoretic transport relative to conventional constant direct current (DC) iontophoresis. The objectives of the present study were to address the following questions. (1) Can the skin electrical resistance be maintained at a constant level by AC in humans in vivo? (2) Are the in vitro data with HEM representative of those in vivo? (3) Does constant skin resistance AC iontophoresis have less inter- and intra-sample variability than conventional constant current DC iontophoresis in vivo? (4) What are the electrical and the barrier properties of skin during iontophoresis in vivo? In the present study, in vitro HEM experiments were carried out with the constant resistance AC and the conventional constant current DC methods using mannitol and glucose as the neutral model permeants. In vivo human experiments were performed using glucose as the permeant with a constant skin resistance AC only protocol and two conventional constant current DC methods (continuous constant current DC and constant current DC with its polarity alternated every 10 min with a 3:7 on:off duty cycle). Constant current DC iontophoresis was conducted with commercial constant current DC devices, and constant resistance AC iontophoresis was carried out by reducing and maintaining the skin resistance at a constant target value with AC supplied from a function generator. This study shows that (1) skin electrical resistance can be maintained at a constant level during AC iontophoresis in vivo; (2) HEM in vitro and human skin in vivo demonstrate similar electrical and barrier properties, and these properties are consistent with our previous findings; (3) there is general qualitative and semi-quantitative agreement between the HEM data in vitro and human skin data in vivo; and (4) constant skin resistance AC iontophoresis generally provides less inter- and intra-subject variability than conventional constant current DC.
Effect of an applied magnetic field on the performance of a SIS receiver near 300 GHz

NASA Technical Reports Server (NTRS)

Mallison, W. H.; De Zafra, R. L.

1992-01-01

A superconductor-insulator-superconductor (SIS) receiver has been successfully constructed and tested for operation at 265 - 280 GHz using 1 micron/sq area Nb-AlO(x)-Nb tunnel junctions fabricated at Stony Brook. The best performance to date is a double sideband (DSB) receiver noise temperature of 129 K at 278 GHz. It is found that suppression of the Josephson pair currents with a magnetic field is essential for good performance and a stable dc bias point. Fields as high as 280 gauss have been used with no degradation of mixing performance. The improvement in the intermediate frequency output stability with progressively increasing magnetic fields is illustrated.
Research on resistance characteristics of YBCO tape under short-time DC large current impact

NASA Astrophysics Data System (ADS)

Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

2017-06-01

Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.
Design of energy-storage reactors for single-winding constant-frequency dc-to-dc converters operating in the discontinuous-reactor-current mode

NASA Technical Reports Server (NTRS)

Chen, D. Y.; Owen, H. A., Jr.; Wilson, T. G.

1980-01-01

This paper presents an algorithm and equations for designing the energy-storage reactor for dc-to-dc converters which are constrained to operate in the discontinuous-reactor-current mode. This design procedure applied to the three widely used single-winding configurations: the voltage step-up, the current step-up, and the voltage-or-current step-up converters. A numerical design example is given to illustrate the use of the design algorithm and design equations.
A wideband photonic microwave phase shifter with 360-degree phase tunable range based on a DP-QPSK modulator

NASA Astrophysics Data System (ADS)

Chen, Yang

2018-03-01

A novel wideband photonic microwave phase shifter with 360-degree phase tunable range is proposed based on a single dual-polarization quadrature phase shift-keying (DP-QPSK) modulator. The two dual-parallel Mach-Zehnder modulators (DP-MZMs) in the DP-QPSK modulator are properly biased to serve as a carrier-suppressed single-sideband (CS-SSB) modulator and an optical phase shifter (OPS), respectively. The microwave signal is applied to the CS-SSB modulator, while a control direct-current (DC) voltage is applied to the OPS. The first-order optical sideband generated from the CS-SSB modulator and the phase tunable optical carrier from the OPS are combined and then detected in a photodetector, where a microwave signal is generated with its phase controlled by the DC voltage applied to the OPS. The proposed technique is theoretically analyzed and experimentally demonstrated. Microwave signals with a carrier frequency from 10 to 23 GHz are continuously phase shifted over 360-degree phase range. The proposed technique features very compact configuration, easy phase tuning and wide operation bandwidth.
Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter.

PubMed

Gottardi, L; Adams, J; Bailey, C; Bandler, S; Bruijn, M; Chervenak, J; Eckart, M; Finkbeiner, F; den Hartog, R; Hoevers, H; Kelley, R; Kilbourne, C; de Korte, P; van der Kuur, J; Lindeman, M; Porter, F; Sadlier, J; Smith, S

At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Δ E FWHM =3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterised the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.
Effect of quantum well position on the distortion characteristics of transistor laser

NASA Astrophysics Data System (ADS)

Piramasubramanian, S.; Ganesh Madhan, M.; Radha, V.; Shajithaparveen, S. M. S.; Nivetha, G.

2018-05-01

The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base-emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base-emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base-emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of -25.96 dBc is predicted for quantum well position (230 nm) near to the base-collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of -38.2 dBc is obtained for the same position and similar biasing conditions.
Diplexer switch

NASA Technical Reports Server (NTRS)

Grauling, C. H., Jr.; Parker, T. W.

1977-01-01

Switch achieves high isolation and continuous input/output matching by using resonant coupling structure of diplexer. Additionally, dc bias network used to control switch is decoupled from RF input and output lines. Voltage transients in external circuits are thus minimized.
Dielectric Barrier Discharge Plasma Actuator for Flow Control

NASA Technical Reports Server (NTRS)

Opaits, Dmitry, F.

2012-01-01

This report is Part II of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. It includes a Ph.D. dissertation. The period of performance was January 1, 2007 to December 31, 2010. Part I of the final report is the overview published as NASA/CR-2012- 217654. Asymmetric dielectric barrier discharge (DBD) plasma actuators driven by nanosecond pulses superimposed on dc bias voltage are studied experimentally. This produces non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. The approach consisted of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low voltages. In view of practical applications certain questions have been also addressed, such as electrodynamic effects which accompany scaling of the actuators to real size models, and environmental effects of ozone production by the plasma actuators.
Measurement of sheath potential by three emissive-probe methods in DC filament plasmas near a biased grid

NASA Astrophysics Data System (ADS)

Kang, In-Je; Park, In-Sun; Wackerbarth, Eugene; Bae, Min-Keun; Hershkowitz, Noah; Severn, Greg; Chung, Kyu-Sun

2017-10-01

Plasma potential structures are measured with an emissive probe near a negatively biased grid ( - 100 V , 80mm diam., 40 lines/cm) immersed in a hot filament DC discharge in Kr. Three different methods of analysis are compared: inflection point (IP), floating potential (FP) and separation point (SE) methods. The plasma device at the University of San Diego (length = 64 cm, diameter = 32 cm, source = filament DC discharge) was operated with 5 ×108
Power connect safety and connection interlock

NASA Technical Reports Server (NTRS)

Rippel, Wally E. (Inventor)

1992-01-01

A power connect safety and connection interlock system is shown for use with inverters and other DC loads (16) which include capacitor filter banks (14) at their DC inputs. A safety circuit (20) operates a spring (26) biased, solenoid (22) driven mechanical connection interference (24) which prevents mating and therefore electrical connection between the power contactor halves (11, 13) of the main power contacts (12) until the capacitor bank is safely precharged through auxiliary contacts (18). When the DC load (16) is shut down, the capacitor bank (14) is automatically discharged through a discharging power resistor (66) by a MOSFET transistor (60) through a discharging power resistor (66) only when both the main power contacts and auxiliary contacts are disconnected.
Soft ferrite cores characterization for integrated micro-inductors

NASA Astrophysics Data System (ADS)

Nguyen, Yen Mai; Lopez, Thomas; Laur, Jean-Pierre; Bourrier, David; Charlot, Samuel; Valdez-Nava, Zarel; Bley, Vincent; Combettes, Céline; Brunet, Magali

2013-12-01

Ferrite-based micro-inductors are proposed for hybrid integration on silicon for low-power medium frequency DC-DC converters. Due to their small coercive field and their high resistivity, soft ferrites are good candidates for a magnetic core working at moderate frequencies in the range of 5-10 MHz. We have studied several soft ferrites including commercial ferrite film and U70 and U200 homemade ferrites. The inductors are fabricated at wafer level using micromachining and assembling techniques. The proposed process is based on a sintered ferrite core placed in between thick electroplated copper windings. The low profile ferrite cores of 1.2 × 2.6 × 0.2 mm3 are produced by two methods from green tape-casted films and ferrite powder. This paper presents the magnetic characterization of the sintered ferrite films cut and printed in rectangular shape and sintered at different temperatures. The comparison is made in order to find out the best material for the core that can reach the required inductance (470 nH at 6 MHz) under 0.6A current DC bias and that generate the smallest losses. An inductance density of 285 nH/ mm2 up to 6 MHz was obtained for ESL 40011 cores that is much higher than the previously reported devices. The small size of our devices is also a prominent point.
Exchange bias and perpendicular anisotropy study of ultrathin Pt-Co-Pt-IrMn multilayers sputtered on float glass

NASA Astrophysics Data System (ADS)

Laval, M.; Lüders, U.; Bobo, J. F.

2007-09-01

We have prepared ultrathin Pt-Co-Pt-IrMn polycrystalline multilayers on float-glass substrates by DC magnetron sputtering. We have determined the optimal set of thickness for both Pt layers, the Co layer and the IrMn biasing layer so that these samples exhibit at the same time out-of-plane magnetic anisotropy and exchange bias. Kerr microscopy domain structure imaging evidences an increase of nucleation rate accompanied with inhomogeneous magnetic behavior in the case of exchange-biased films compared to Pt-Co-Pt trilayers. Polar hysteresis loops are measured in obliquely applied magnetic field conditions, allowing us to determine both perpendicular anisotropy effective constant Keff and exchange-bias coupling JE, which are significantly different from the ones determined by standard switching field measurements.
A very low noise, high accuracy, programmable voltage source for low frequency noise measurements.

PubMed

Scandurra, Graziella; Giusi, Gino; Ciofi, Carmine

2014-04-01

In this paper an approach for designing a programmable, very low noise, high accuracy voltage source for biasing devices under test in low frequency noise measurements is proposed. The core of the system is a supercapacitor based two pole low pass filter used for filtering out the noise produced by a standard DA converter down to 100 mHz with an attenuation in excess of 40 dB. The high leakage current of the supercapacitors, however, introduces large DC errors that need to be compensated in order to obtain high accuracy as well as very low output noise. To this end, a proper circuit topology has been developed that allows to considerably reduce the effect of the supercapacitor leakage current on the DC response of the system while maintaining a very low level of output noise. With a proper design an output noise as low as the equivalent input voltage noise of the OP27 operational amplifier, used as the output buffer of the system, can be obtained with DC accuracies better that 0.05% up to the maximum output of 8 V. The expected performances of the proposed voltage source have been confirmed both by means of SPICE simulations and by means of measurements on actual prototypes. Turn on and stabilization times for the system are of the order of a few hundred seconds. These times are fully compatible with noise measurements down to 100 mHz, since measurement times of the order of several tens of minutes are required in any case in order to reduce the statistical error in the measured spectra down to an acceptable level.
A very low noise, high accuracy, programmable voltage source for low frequency noise measurements

NASA Astrophysics Data System (ADS)

Scandurra, Graziella; Giusi, Gino; Ciofi, Carmine

2014-04-01

In this paper an approach for designing a programmable, very low noise, high accuracy voltage source for biasing devices under test in low frequency noise measurements is proposed. The core of the system is a supercapacitor based two pole low pass filter used for filtering out the noise produced by a standard DA converter down to 100 mHz with an attenuation in excess of 40 dB. The high leakage current of the supercapacitors, however, introduces large DC errors that need to be compensated in order to obtain high accuracy as well as very low output noise. To this end, a proper circuit topology has been developed that allows to considerably reduce the effect of the supercapacitor leakage current on the DC response of the system while maintaining a very low level of output noise. With a proper design an output noise as low as the equivalent input voltage noise of the OP27 operational amplifier, used as the output buffer of the system, can be obtained with DC accuracies better that 0.05% up to the maximum output of 8 V. The expected performances of the proposed voltage source have been confirmed both by means of SPICE simulations and by means of measurements on actual prototypes. Turn on and stabilization times for the system are of the order of a few hundred seconds. These times are fully compatible with noise measurements down to 100 mHz, since measurement times of the order of several tens of minutes are required in any case in order to reduce the statistical error in the measured spectra down to an acceptable level.
Noise in tunneling spin current across coupled quantum spin chains

NASA Astrophysics Data System (ADS)

Aftergood, Joshua; Takei, So

2018-01-01

We theoretically study the spin current and its dc noise generated between two spin-1 /2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and we compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a concomitant divergence in the spin Fano factor, defined as the spin current noise-to-signal ratio. This divergence is shown to have an exact analogy to the physics of electron scattering between fractional quantum Hall edge states and not to arise in the magnon scenario. We also reveal a suppression in the spin current noise that exclusively arises in the spin chain scenario due to the fermion nature of the spin-1/2 operators. We discuss how the spin Fano factor may be extracted experimentally via the inverse spin Hall effect used extensively in spintronics.
Characteristics of space charge formed in a laminated LDPE/EVA dielectric under DC stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Toshikatsu; Kisanuki, Osamu; Sakata, Masataka

1996-12-31

A laser-induced pressure pulse (LIPP) method was used for measuring the space charge distribution of LDPE/EVA laminate dielectrics under dc stress. The constant voltage up to {+-}20 kV was applied to a side of the laminates of 0.5 mm thickness for 30 minutes. The other side is grounded. When the amount of space charge was measured by LIPP, both sides were virtually grounded. Space charge built up in or near the interface between LDPE and EVA was mainly investigated. Positive and negative voltage was applied to the side of LDPE in the laminates. It was clarified that the space chargemore » was larger in case of LDPE negatively biased than in case of LDPE positively biased. The density of the space charge ranged around 1 nC/mm{sup 3}. The formation of interfacial space charge is analyzed.« less
Parametric Characterization of TES Detectors Under DC Bias

NASA Technical Reports Server (NTRS)

Chiao, Meng P.; Smith, Stephen James; Kilbourne, Caroline A.; Adams, Joseph S.; Bandler, Simon R.; Betancourt-Martinez, Gabriele L.; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Ewin, Audrey J.;

2016-01-01

The X-ray integrated field unit (X-IFU) in European Space Agency's (ESA's) Athena mission will be the first high-resolution X-ray spectrometer in space using a large-format transition-edge sensor microcalorimeter array. Motivated by optimization of detector performance for X-IFU, we have conducted an extensive campaign of parametric characterization on transition-edge sensor (TES) detectors with nominal geometries and physical properties in order to establish sensitivity trends relative to magnetic field, dc bias on detectors, operating temperature, and to improve our understanding of detector behavior relative to its fundamental properties such as thermal conductivity, heat capacity, and transition temperature. These results were used for validation of a simple linear detector model in which a small perturbation can be introduced to one or multiple parameters to estimate the error budget for X-IFU. We will show here results of our parametric characterization of TES detectors and briefly discuss the comparison with the TES model.

Optical impedance spectroscopy with single-mode electro-active-integrated optical waveguides.

PubMed

Han, Xue; Mendes, Sergio B

2014-02-04

An optical impedance spectroscopy (OIS) technique based on a single-mode electro-active-integrated optical waveguide (EA-IOW) was developed to investigate electron-transfer processes of redox adsorbates. A highly sensitive single-mode EA-IOW device was used to optically follow the time-dependent faradaic current originated from a submonolayer of cytochrome c undergoing redox exchanges driven by a harmonic modulation of the electric potential at several dc bias potentials and at several frequencies. To properly retrieve the faradaic current density from the ac-modulated optical signal, we introduce here a mathematical formalism that (i) accounts for intrinsic changes that invariably occur in the optical baseline of the EA-IOW device during potential modulation and (ii) provides accurate results for the electro-chemical parameters. We are able to optically reconstruct the faradaic current density profile against the dc bias potential in the working electrode, identify the formal potential, and determine the energy-width of the electron-transfer process. In addition, by combining the optically reconstructed faradaic signal with simple electrical measurements of impedance across the whole electrochemical cell and the capacitance of the electric double-layer, we are able to determine the time-constant connected to the redox reaction of the adsorbed protein assembly. For cytochrome c directly immobilized onto the indium tin oxide (ITO) surface, we measured a reaction rate constant of 26.5 s(-1). Finally, we calculate the charge-transfer resistance and pseudocapacitance associated with the electron-transfer process and show that the frequency dependence of the redox reaction of the protein submonolayer follows as expected the electrical equivalent of an RC-series admittance diagram. Above all, we show here that OIS with single-mode EA-IOW's provide strong analytical signals that can be readily monitored even for small surface-densities of species involved in the redox process (e.g., fmol/cm(2), 0.1% of a full protein monolayer). This experimental approach, when combined with the analytical formalism described here, brings additional sensitivity, accuracy, and simplicity to electro-chemical analysis and is expected to become a useful tool in investigations of redox processes.

Development, Demonstration, and Control of a Testbed for Multiterminal HVDC System

DOE PAGES

Li, Yalong; Shi, Xiaojie M.; Liu, Bo; ...

2016-10-21

This paper presents the development of a scaled four-terminal high-voltage direct current (HVDC) testbed, including hardware structure, communication architecture, and different control schemes. The developed testbed is capable of emulating typical operation scenarios including system start-up, power variation, line contingency, and converter station failure. Some unique scenarios are also developed and demonstrated, such as online control mode transition and station re-commission. In particular, a dc line current control is proposed, through the regulation of a converter station at one terminal. By controlling a dc line current to zero, the transmission line can be opened by using relatively low-cost HVDC disconnectsmore » with low current interrupting capability, instead of the more expensive dc circuit breaker. Utilizing the dc line current control, an automatic line current limiting scheme is developed. As a result, when a dc line is overloaded, the line current control will be automatically activated to regulate current within the allowable maximum value.« less
Processing of Emotional Faces in Patients with Chronic Pain Disorder: An Eye-Tracking Study.

PubMed

Giel, Katrin Elisabeth; Paganini, Sarah; Schank, Irena; Enck, Paul; Zipfel, Stephan; Junne, Florian

2018-01-01

Problems in emotion processing potentially contribute to the development and maintenance of chronic pain. Theories focusing on attentional processing have suggested that dysfunctional attention deployment toward emotional information, i.e., attentional biases for negative emotions, might entail one potential developmental and/or maintenance factor of chronic pain. We assessed self-reported alexithymia, attentional orienting to and maintenance on emotional stimuli using eye tracking in 17 patients with chronic pain disorder (CP) and two age- and sex-matched control groups, 17 healthy individuals (HC) and 17 individuals who were matched to CP according to depressive symptoms (DC). In a choice viewing paradigm, a dot indicated the position of the emotional picture in the next trial to allow for strategic attention deployment. Picture pairs consisted of a happy or sad facial expression and a neutral facial expression of the same individual. Participants were asked to explore picture pairs freely. CP and DC groups reported higher alexithymia than the HC group. HC showed a previously reported emotionality bias by preferentially orienting to the emotional face and preferentially maintaining on the happy face. CP and DC participants showed no facilitated early attention to sad facial expressions, and DC participants showed no facilitated early attention to happy facial expressions, while CP and DC participants did. We found no group differences in attentional maintenance. Our findings are in line with the clinical large overlap between pain and depression. The blunted initial reaction to sadness could be interpreted as a failure of the attentional system to attend to evolutionary salient emotional stimuli or as an attempt to suppress negative emotions. These difficulties in emotion processing might contribute to etiology or maintenance of chronic pain and depression.
Modeling Bloch oscillations in nanoscale Josephson junctions.

PubMed

Vora, Heli; Kautz, R L; Nam, S W; Aumentado, J

2017-08-01

Bloch oscillations in nanoscale Josephson junctions with a Coulomb charging energy comparable to the Josephson coupling energy are explored within the context of a model previously considered by Geigenmüller and Schön that includes Zener tunneling and treats quasiparticle tunneling as an explicit shot-noise process. The dynamics of the junction quasicharge are investigated numerically using both Monte Carlo and ensemble approaches to calculate voltage-current characteristics in the presence of microwaves. We examine in detail the origin of harmonic and subharmonic Bloch steps at dc biases I = ( n/m )2 ef induced by microwaves of frequency f and consider the optimum parameters for the observation of harmonic ( m = 1) steps. We also demonstrate that the GS model allows a detailed semiquantitative fit to experimental voltage-current characteristics previously obtained at the Chalmers University of Technology, confirming and strengthening the interpretation of the observed microwave-induced steps in terms of Bloch oscillations.
Modeling Bloch oscillations in nanoscale Josephson junctions

PubMed Central

Vora, Heli; Kautz, R. L.; Nam, S. W.; Aumentado, J.

2018-01-01

Bloch oscillations in nanoscale Josephson junctions with a Coulomb charging energy comparable to the Josephson coupling energy are explored within the context of a model previously considered by Geigenmüller and Schön that includes Zener tunneling and treats quasiparticle tunneling as an explicit shot-noise process. The dynamics of the junction quasicharge are investigated numerically using both Monte Carlo and ensemble approaches to calculate voltage-current characteristics in the presence of microwaves. We examine in detail the origin of harmonic and subharmonic Bloch steps at dc biases I = (n/m)2ef induced by microwaves of frequency f and consider the optimum parameters for the observation of harmonic (m = 1) steps. We also demonstrate that the GS model allows a detailed semiquantitative fit to experimental voltage-current characteristics previously obtained at the Chalmers University of Technology, confirming and strengthening the interpretation of the observed microwave-induced steps in terms of Bloch oscillations. PMID:29577106
Current level detector

DOEpatents

Kerns, Cordon R.

1977-01-01

A device is provided for detecting the current level of a DC signal. It includes an even harmonic modulator to which a reference AC signal is applied. The unknown DC signal acts on the reference AC signal so that the output of the modulator includes an even harmonic whose amplitude is proportional to the unknown DC current.
Pupils' Representations of Electric Current before, during and after Instruction on DC Circuits.

ERIC Educational Resources Information Center

Psillos, D.; And Others

1987-01-01

Reported are compulsory education pupils' representations of electric current in a constructivist approach to introducing direct current (DC) circuits. Suggests that the pupils views can be modelled after an energy framework. Makes suggestions about the content, the apparatus and the experiments used in teaching DC circuits. (CW)
Effects of Combined Stressing on the Electrical Properties of Film and Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Overton, Eric; Hammoud, Ahmad N.; Baumann, Eric D.; Myers, Ira T.

1994-01-01

Advanced power systems which generate, control, and distribute electrical power to many large loads are a requirement for future space exploration missions. The development of high temperature insulating materials and power components constitute a key element in systems which are lightweight, efficient, and are capable of surviving the hostile space environment. In previous work, experiments were carried out to evaluate film and ceramic capacitors for potential use in high temperature applications. The effects of thermal stressing, in air and without electrical bias, on the electrical properties of the capacitors as a function of thermal aging up to 12 weeks were determined. In this work, the combined effects of thermal aging and electrical stresses on the properties of teflon film and ceramic power capacitors were examined. The ceramic capacitors were thermally aged for 35 weeks and the teflon capacitors for 15 weeks at 200 C under full electrical bias and were characterized, on a weekly basis, in terms of their capacitance stability and electrical loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also obtained. The results obtained represent the influence that short-term thermal aging and electrical bias have on the electrical properties of the power capacitors characterized.
Direct current uninterruptible power supply method and system

DOEpatents

Sinha, Gautam

2003-12-02

A method and system are described for providing a direct current (DC) uninterruptible power supply with the method including, for example: continuously supplying fuel to a turbine; converting mechanical power from the turbine into alternating current (AC) electrical power; converting the AC electrical power to DC power within a predetermined voltage level range; supplying the DC power to a load; and maintaining a DC load voltage within the predetermined voltage level range by adjusting the amount of fuel supplied to the turbine.
DC and AC Electric Field Measurements by Spin-Plane Double Probes Onboard MMS

NASA Astrophysics Data System (ADS)

Lindqvist, P. A.; Marklund, G. T.; Khotyaintsev, Y. V.; Ergun, R. E.; Goodrich, K.; Torbert, R. B.; Argall, M. R.; Nakamura, R.

2015-12-01

The four spacecraft of the NASA Magnetospheric Multiscale mission (MMS) were launched on 12 March 2015 into a 1.2 x 12 Re equatorial orbit to study energy conversion processes in Earth's magnetosphere. After a 5-month commissioning period the first scientific phase starts on 1 September as the orbit enters the dusk magnetopause region. The Spin-plane Double Probe electric field instrument (SDP), part of the electric and magnetic fields instrument suite FIELDS, measures the electric field in the range 0.3 - 500 mV/m with a continuous time resolution up to 8192 samples/s. The instrument features adjustable bias currents and guard voltages to optimize the measurement performance. SDP also measures the spacecraft potential, which can be controlled by the Active Spacecraft Potential Control (ASPOC) ion emitter, and under certain conditions can be used to determine plasma density. We present observations of DC and AC electric fields in different plasma regions covered by MMS since launch including the night side flow braking region, reconnection regions at the dusk and dayside magnetopause, and in the magnetosheath. We compare the electric field measurements by SDP to other, independent determinations of the electric field, in particular by the Electron Drift Instrument (EDI), in order to assess the accuracy of the electric field measurement under different plasma conditions. We also study the influence of the currents emitted by ASPOC and EDI on the SDP measurements.
Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors: II—Numerical modeling of dc characteristics

NASA Astrophysics Data System (ADS)

Basile, A. F.; Kyndiah, A.; Biscarini, F.; Fraboni, B.

2014-06-01

A numerical procedure to calculate the drain-current (ID) vs. gate-voltage (VG) characteristics from numerical solutions of the Poisson equation for organic Thin-Film Transistors (TFTs) is presented. Polaron transport is modeled as two-dimensional charge transport in a semiconductor having free-carrier density of states proportional to the density of molecules and traps with energy equal to the polaron-hopping barrier. The simulated ID-VG curves are proportional to the product of the density of free carriers, calculated as a function of VG, and the intrinsic mobility, assumed to be a constant independent of temperature. The presence of traps in the oxide was also taken into account in the model, which was applied to a TFT made with six monolayers of pentacene grown on an oxide substrate. The polaron-hopping barrier determines the temperature dependence of the simulated ID-VG curves, trapping in the oxide is responsible for current reduction at high bias and the slope of the characteristics near threshold is related to the metal-semiconductor work-function difference. The values of the model parameters yielding the best match between calculations and experiments are consistent with previous experimental results and theoretical predictions. Therefore, this model enables to extract both physical and technological properties of thin-film devices from the temperature-dependent dc characteristics.
Temperature dependence of exchange bias in (NiFe/IrMn)n multilayer films studied through static and dynamic techniques

NASA Astrophysics Data System (ADS)

Adams, Daniel J.; Khanal, Shankar; Khan, Mohammad Asif; Maksymov, Artur; Spinu, Leonard

2018-05-01

The in-plane temperature dependence of exchange bias was studied through both dc magnetometry and ferromagnetic resonance spectroscopy in a series of [NiFe/IrMn]n multilayer films, where n is the number of layer repetitions. Major hysteresis loops were recorded in the temperature range of 300 K to 2 K to reveal the effect of temperature on the exchange bias in the static regime while temperature-dependent continuous-wave ferromagnetic resonance for frequencies from 3 to 16 GHz was used to determine the exchange bias dynamically. Strong divergence between the values of exchange bias determined using the two different types of measurements as well as a peak in temperature dependence of the resonance linewidth were observed. These results are explained in terms of the slow-relaxer mechanism.
Digital Signal Processing and Generation for a DC Current Transformer for Particle Accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zorzetti, Silvia

2013-01-01

The thesis topic, digital signal processing and generation for a DC current transformer, focuses on the most fundamental beam diagnostics in the field of particle accelerators, the measurement of the beam intensity, or beam current. The technology of a DC current transformer (DCCT) is well known, and used in many areas, including particle accelerator beam instrumentation, as non-invasive (shunt-free) method to monitor the DC current in a conducting wire, or in our case, the current of charged particles travelling inside an evacuated metal pipe. So far, custom and commercial DCCTs are entirely based on analog technologies and signal processing, whichmore » makes them inflexible, sensitive to component aging, and difficult to maintain and calibrate.« less
A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

NASA Technical Reports Server (NTRS)

Rosenfeld, David; Bahir, Gad

1992-01-01

A theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes is presented. The model describes the traps and the trap characteristics: concentration, energy level, and capture cross sections. We have observed that the above two types of diodes differ in the voltage dependence of the trap-assisted tunneling current and dynamic resistance. Our model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated DC characteristics of the photodiodes (for medium and high reverse bias and for temperatures from 65 to 140 K) supports the validity of the model.
Self-sustaining dynamical nuclear polarization oscillations in quantum dots.

PubMed

Rudner, M S; Levitov, L S

2013-02-22

Early experiments on spin-blockaded double quantum dots revealed robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias. Despite experimental evidence implicating dynamical nuclear polarization, the mechanism has remained a mystery. Here we introduce a minimal albeit realistic model of coupled electron and nuclear spin dynamics which supports self-sustained oscillations. Our mechanism relies on a nuclear spin analog of the tunneling magnetoresistance phenomenon (spin-dependent tunneling rates in the presence of an inhomogeneous Overhauser field) and nuclear spin diffusion, which governs dynamics of the spatial profile of nuclear polarization. The proposed framework naturally explains the differences in phenomenology between vertical and lateral quantum dot structures as well as the extremely long oscillation periods.
Analysis of Electric Vehicle DC High Current Conversion Technology

NASA Astrophysics Data System (ADS)

Yang, Jing; Bai, Jing-fen; Lin, Fan-tao; Lu, Da

2017-05-01

Based on the background of electric vehicles, it is elaborated the necessity about electric energy accurate metering of electric vehicle power batteries, and it is analyzed about the charging and discharging characteristics of power batteries. It is needed a DC large current converter to realize accurate calibration of power batteries electric energy metering. Several kinds of measuring methods are analyzed based on shunts and magnetic induction principle in detail. It is put forward power batteries charge and discharge calibration system principle, and it is simulated and analyzed ripple waves containing rate and harmonic waves containing rate of power batteries AC side and DC side. It is put forward suitable DC large current measurement methods of power batteries by comparing different measurement principles and it is looked forward the DC large current measurement techniques.
Photovoltaic system with improved DC connections and method of making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cioffi, Philip Michael; Todorovic, Maja Harfman; Herzog, Michael Scott

A micro-inverter assembly includes a housing having an opening formed in a bottom surface thereof, and a direct current (DC)-to-alternating current (AC) micro-inverter disposed within the housing at a position adjacent to the opening. The micro-inverter assembly further includes a micro-inverter DC connector electrically coupled to the DC-to-AC micro-inverter and positioned within the opening of the housing, the micro-inverter DC connector having a plurality of exposed electrical contacts.
Auxiliary resonant DC tank converter

DOEpatents

Peng, Fang Z.

2000-01-01

An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.
Silicon modulators with optimized vertical PN junctions for high-modulation-efficiency and low-loss in the O-band

NASA Astrophysics Data System (ADS)

Ang, Thomas Y. L.; Png, Ching Eng; Lim, Soon Thor; Ong, Jun Rong

2018-02-01

Silicon modulators based on the carrier depletion mechanism are extensively used in recent years for high-speed data transmission. Lateral PN junctions are the most common electro-optical phase shifters for silicon Mach-Zehnder modulators (MZMs) due to its ease of fabrication. They have a relatively high DC VπLπ of around 2.5 V.cm in the Oband. An alternative approach is to design and optimize vertical PN junctions for lower DC VπLπ, which is currently lacking in the literature for silicon MZMs that operates using carrier depletion mechanism in the O-band. In this work, we look into the design and optimization of silicon phase shifters based on vertical PN junctions for high-modulationefficiency with VπLπ <= 1 V.cm, while meeting the stringent low loss budget of <= 1 dB/mm for data communication in the O-band. This is achieved by varying the offsets of the vertical PN junction with respect to different doping concentrations (2e17/cm3 - 3e18/cm3 ) near the depletion region. Different types of doping schemes are explored and optimized. Our optimized vertical PN junction designs are predicted to give low DC VπLπ of 0.26-0.5 V.cm for low DC reverse bias of >= -2V and low propagation loss of <= 1dB/mm, resulting in α.VπLπ = 1.7 for the best designs, which to the best of our knowledge, is the lowest α.VπLπ at the O-band to date. Electrical and optical modeling are based on our in-house proprietary software that is able to perform both optical and electrical simulations without loss of data fidelity.
Human perception of electric fields and ion currents associated with high-voltage DC transmission lines.

PubMed

Blondin, J P; Nguyen, D H; Sbeghen, J; Goulet, D; Cardinal, C; Maruvada, P S; Plante, M; Bailey, W H

1996-01-01

The objective of this study was to assess the ability of humans to detect the presence of DC electric field and ion currents. An exposure chamber simulating conditions present in the vicinity of high-voltage DC (HVDC) lines was designed and built for this purpose. In these experiments, the facility was used to expose observers to DC electric fields up to 50 kV/m and ion current densities up to 120 nA/m2. Forty-eight volunteers (25 women and 23 men) between the ages of 18 and 57 years served as observers. Perception of DC fields was examined by using two psychophysical methods: an adaptive staircase procedure and a rating method derived from signal-detection theory. Subjects completed three different series of observations by using each of these methods; one was conducted without ion currents, and the other two involved various combinations of electric fields and ion currents. Overall, subjects were significantly more likely to detect DC fields as the intensity increased. Observers were able to detect the presence of DC fields alone, but only at high intensities; the average threshold was 45 kV/m. Except in the most sensitive individuals, ion current densities up to 60 nA/m2 did not significantly facilitate the detection of DC fields. However, higher ion current densities were associated with a substantial lowering of sensory thresholds in a large majority of observers. Data analysis also revealed large variations in perceptual thresholds among observers. Normative data indicating DC field and ion current intensities that can be detected by 50% of all observers are provided. In addition, for the most sensitive observers, several other detection proportions were derived from the distribution of individual detection capabilities. These data can form the basis for environmental guidelines relating to the design of HVDC lines.
Nonlinear thermoelectric effects in high-field superconductor-ferromagnet tunnel junctions

PubMed Central

Kolenda, Stefan; Machon, Peter

2016-01-01

Background: Thermoelectric effects result from the coupling of charge and heat transport and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron–hole symmetry, which is usually quite small in metal structures. In addition, thermoelectric effects decrease towards low temperatures, which usually makes them vanishingly small in metal nanostructures in the sub-Kelvin regime. Results: We report on a combined experimental and theoretical investigation of thermoelectric effects in superconductor/ferromagnet hybrid structures. We investigate the dependence of thermoelectric currents on the thermal excitation, as well as on the presence of a dc bias voltage across the junction. Conclusion: Large thermoelectric effects are observed in superconductor/ferromagnet and superconductor/normal-metal hybrid structures. The spin-independent signals observed under finite voltage bias are shown to be reciprocal to the physics of superconductor/normal-metal microrefrigerators. The spin-dependent thermoelectric signals in the linear regime are due to the coupling of spin and heat transport, and can be used to design more efficient refrigerators. PMID:28144509

Suppression of multipacting in high power RF couplers operating with superconducting cavities

NASA Astrophysics Data System (ADS)

Ostroumov, P. N.; Kazakov, S.; Morris, D.; Larter, T.; Plastun, A. S.; Popielarski, J.; Wei, J.; Xu, T.

2017-06-01

Capacitive input couplers based on a 50 Ω coaxial transmission line are frequently used to transmit RF power to superconducting (SC) resonators operating in CW mode. It is well known that coaxial transmission lines are prone to multipacting phenomenon in a wide range of RF power level and operating frequency. The Facility for Rare Isotope Beams (FRIB) being constructed at Michigan State University includes two types of quarter wave SC resonators (QWR) operating at 80.5 MHz and two types of half wave SC resonators (HWR) operating at 322 MHz. As was reported in ref. [1] a capacitive input coupler used with HWRs was experiencing strong multipacting that resulted in a long conditioning time prior the cavity testing at design levels of accelerating fields. We have developed an insert into 50 Ω coaxial transmission line that provides opportunity to bias the RF coupler antenna and protect the amplifier from the bias potential in the case of breakdown in DC isolation. Two of such devices have been built and are currently used for the off-line testing of 8 HWRs installed in the cryomodule.
50 MHz-10 GHz low-power resistive feedback current-reuse mixer with inductive peaking for cognitive radio receiver.

PubMed

Vitee, Nandini; Ramiah, Harikrishnan; Chong, Wei-Keat; Tan, Gim-Heng; Kanesan, Jeevan; Reza, Ahmed Wasif

2014-01-01

A low-power wideband mixer is designed and implemented in 0.13 µm standard CMOS technology based on resistive feedback current-reuse (RFCR) configuration for the application of cognitive radio receiver. The proposed RFCR architecture incorporates an inductive peaking technique to compensate for gain roll-off at high frequency while enhancing the bandwidth. A complementary current-reuse technique is used between transconductance and IF stages to boost the conversion gain without additional power consumption by reusing the DC bias current of the LO stage. This downconversion double-balanced mixer exhibits a high and flat conversion gain (CG) of 14.9 ± 1.4 dB and a noise figure (NF) better than 12.8 dB. The maximum input 1-dB compression point (P1dB) and maximum input third-order intercept point (IIP3) are -13.6 dBm and -4.5 dBm, respectively, over the desired frequency ranging from 50 MHz to 10 GHz. The proposed circuit operates down to a supply headroom of 1 V with a low-power consumption of 3.5 mW.
Performance of 22.4-kW nonlaminated-frame dc series motor with chopper controller. [a dc to dc voltage converter

NASA Technical Reports Server (NTRS)

Schwab, J. R.

1979-01-01

Performance data obtained through experimental testing of a 22.4 kW traction motor using two types of excitation are presented. Ripple free dc from a motor-generator set for baseline data and pulse width modulated dc as supplied by a battery pack and chopper controller were used for excitation. For the same average values of input voltage and current, the motor power output was independent of the type of excitation. However, at the same speeds, the motor efficiency at low power output (corresponding to low duty cycle of the controller) was 5 to 10 percentage points lower on chopped dc than on ripple free dc. The chopped dc locked-rotor torque was approximately 1 to 3 percent greater than the ripple free dc torque for the same average current.
An Optimal Current Observer for Predictive Current Controlled Buck DC-DC Converters

PubMed Central

Min, Run; Chen, Chen; Zhang, Xiaodong; Zou, Xuecheng; Tong, Qiaoling; Zhang, Qiao

2014-01-01

In digital current mode controlled DC-DC converters, conventional current sensors might not provide isolation at a minimized price, power loss and size. Therefore, a current observer which can be realized based on the digital circuit itself, is a possible substitute. However, the observed current may diverge due to the parasitic resistors and the forward conduction voltage of the diode. Moreover, the divergence of the observed current will cause steady state errors in the output voltage. In this paper, an optimal current observer is proposed. It achieves the highest observation accuracy by compensating for all the known parasitic parameters. By employing the optimal current observer-based predictive current controller, a buck converter is implemented. The converter has a convergently and accurately observed inductor current, and shows preferable transient response than the conventional voltage mode controlled converter. Besides, costs, power loss and size are minimized since the strategy requires no additional hardware for current sensing. The effectiveness of the proposed optimal current observer is demonstrated experimentally. PMID:24854061
Leakage current evaluation for pn junctions formed in DC and RF MeV ion implanted wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yanagisawa, Yasunobu; Honda, Mitsuharu; Ogasawara, Makota

1996-12-31

The leakage current of pn junctions formed in DC and RF MeV implanted wells have been evaluated. There is no substantial difference in the leakage current levels between the continuous and pulsive beam implantations. However, the leakage current, so called diffusion current, for RF implanted wells is slightly higher than that for DC implanted wells on some condition. This suggests a possibility that relatively higher density of residual defects remains in the case of RIF implant.
The dynamic resistance of YBCO coated conductor wire: effect of DC current magnitude and applied field orientation

NASA Astrophysics Data System (ADS)

Jiang, Zhenan; Zhou, Wei; Li, Quan; Yao, Min; Fang, Jin; Amemiya, Naoyuki; Bumby, Chris W.

2018-07-01

Dynamic resistance, which occurs when a HTS coated conductor carries a DC current under an AC magnetic field, can have critical implications for the design of HTS machines. Here, we report measurements of dynamic resistance in a commercially available SuperPower 4 mm-wide YBCO coated conductor, carrying a DC current under an applied AC magnetic field of arbitrary orientation. The reduced DC current, I t/I c0, ranged from 0.01 to 0.9, where I t is the DC current level and I c0 is the self-field critical current of the conductor. The field angle (the angle between the magnetic field and the normal vector of the conductor wide-face) was varied between 0° and 90° at intervals of 10°. We show that the effective width of the conductor under study is ˜12% less than the physical wire width, and we attribute this difference to edge damage of the wire during or after manufacture. We then examine the measured dynamic resistance of this wire under perpendicular applied fields at very low DC current levels. In this regime we find that the threshold field, B th, of the conductor is well described by the nonlinear equation of Mikitik and Brandt. However, this model consistently underestimates the threshold field at higher current levels. As such, the dynamic resistance in a coated conductor under perpendicular magnetic fields is best described using two different equations for each of the low and high DC current regimes, respectively. At low DC currents where I t/I c0 ≤ 0.1, the nonlinear relationship of Mikitik and Brandt provides the closest agreement with experimental data. However, in the higher current regime where I t/I c0 ≥ 0.2, closer agreement is obtained using a simple linear expression which assumes a current-independent penetration field. We further show that for the conductor studied here, the measured dynamic resistance at different field angles is dominated by the perpendicular magnetic field component, with negligible contribution from the parallel component. Our findings now enable the dynamic resistance of a single conductor to be analytically determined for a very wide range of DC currents and at all applied field angles.
MBE System for Antimonide Based Semiconductor Lasers

DTIC Science & Technology

1999-01-31

selectivity are reported as a function of plasma chemistry and DC self-bias. Experiment The samples used in this study are undoped bulk GaSb, InSb...Phys. Lett. 64(13), 1673-1675 (1994). 8. J. W. Lee, J. Hong, E. S. Lambers, C. R. Abernathy, S. J. Pearton, W. S. Hobson, and F. Ren, Plasma Chemistry and...AlGaAsSb are reported as functions of plasma chemistry , ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering desorption of
High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.
High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.
Method and system for a gas tube-based current source high voltage direct current transmission system

DOEpatents

She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di

2017-08-29

A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.
Nonlinear time-series analysis of current signal in cathodic contact glow discharge electrolysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allagui, Anis, E-mail: aallagui@sharjah.ac.ae; Abdelkareem, Mohammad Ali; Rojas, Andrea Espinel

In the standard two-electrode configuration employed in electrolytic process, when the control dc voltage is brought to a critical value, the system undergoes a transition from conventional electrolysis to contact glow discharge electrolysis (CGDE), which has also been referred to as liquid-submerged micro-plasma, glow discharge plasma electrolysis, electrode effect, electrolytic plasma, etc. The light-emitting process is associated with the development of an irregular and erratic current time-series which has been arbitrarily labelled as “random,” and thus dissuaded further research in this direction. Here, we examine the current time-series signals measured in cathodic CGDE configuration in a concentrated KOH solution atmore » different dc bias voltages greater than the critical voltage. We show that the signals are, in fact, not random according to the NIST SP. 800-22 test suite definition. We also demonstrate that post-processing low-pass filtered sequences requires less time than the native as-measured sequences, suggesting a superposition of low frequency chaotic fluctuations and high frequency behaviors (which may be produced by more than one possible source of entropy). Using an array of nonlinear time-series analyses for dynamical systems, i.e., the computation of largest Lyapunov exponents and correlation dimensions, and re-construction of phase portraits, we found that low-pass filtered datasets undergo a transition from quasi-periodic to chaotic to quasi-hyper-chaotic behavior, and back again to chaos when the voltage controlling-parameter is increased. The high frequency part of the signals is discussed in terms of highly nonlinear turbulent motion developed around the working electrode.« less
77 FR 36950 - Airworthiness Directives; Dassault Aviation Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-20

... time between overhauls, and required an initial overhaul, of the direct current (DC) generator... overhauls, and required an initial overhaul, of the DC generator (bearings). That NPRM resulted from... condition as: Time between overhaul (TBO) of DC [direct current] generator bearings is set at 1,000 flight...
Multiple high voltage output DC-to-DC power converter

NASA Technical Reports Server (NTRS)

Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

1977-01-01

Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.
Modified Perfect Harmonics Cancellation Control of a Grid Interfaced SPV Power Generation

NASA Astrophysics Data System (ADS)

Singh, B.; Shahani, D. T.; Verma, A. K.

2015-03-01

This paper deals with a grid interfaced solar photo voltaic (SPV) power generating system with modified perfect harmonic cancellation (MPHC) control for power quality improvement in terms of mitigation of the current harmonics, power factor correction, control of point of common coupling (PCC) voltage with reactive power compensation and load balancing in a three phase distribution system. The proposed grid interfaced SPV system consists of a SPV array, a dc-dc boost converter and a voltage source converter (VSC) used for the compensation of other connected linear and nonlinear loads at PCC. The reference grid currents are estimated using MPHC method and control signals are derived by using pulse width modulation (PWM) current controller of VSC. The SPV power is fed to the common dc bus of VSC and dc-dc boost converter using maximum power point tracking (MPPT). The dc link voltage of VSC is regulated by using dc voltage proportional integral (PI) controller. The analysis of the proposed SPV power generating system is carried out under dc/ac short circuit and severe SPV-SX and SPV-TX intrusion.
Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

NASA Astrophysics Data System (ADS)

Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P.

2016-01-01

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.
Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vissers, M. R.; Erickson, R. P.; Ku, H.-S.

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approachesmore » the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.« less
Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

NASA Astrophysics Data System (ADS)

Carl, D. A.; Hess, D. W.; Lieberman, M. A.; Nguyen, T. D.; Gronsky, R.

1991-09-01

Thin (3-300-nm) oxides were grown on single-crystal silicon substrates at temperatures from 523 to 673 K in a low-pressure electron cyclotron resonance (ECR) oxygen plasma. Oxides were grown under floating, anodic or cathodic bias conditions, although only the oxides grown under floating or anodic bias conditions are acceptable for use as gate dielectrics in metal-oxide-semiconductor technology. Oxide thickness uniformity as measured by ellipsometry decreased with increasing oxidation time for all bias conditions. Oxidation kinetics under anodic conditions can be explained by negatively charged atomic oxygen, O-, transport limited growth. Constant current anodizations yielded three regions of growth: (1) a concentration gradient dominated regime for oxides thinner than 10 nm, (2) a field dominated regime with ohmic charged oxidant transport for oxide thickness in the range of 10 nm to approximately 100 nm, and (3) a space-charge limited regime for films thicker than approximately 100 nm. The relationship between oxide thickness (xox), overall potential drop (Vox) and ion current (ji) in the space-charge limited transport region was of the form: ji ∝ V2ox/x3ox. Transmission electron microscopy analysis of 5-60-nm-thick anodized films indicated that the silicon-silicon dioxide interface was indistinguishable from that of thermal oxides grown at 1123 K. High-frequency capacitance-voltage (C-V) and ramped bias current-voltage (I-V) studies performed on 5.4-30-nm gate thickness capacitors indicated that the as-grown ECR films had high levels of fixed oxide charge (≳1011 cm-2) and interface traps (≳1012 cm-2 eV-1). The fixed charge level could be reduced to ≊4×1010 cm-2 by a 20 min polysilicon gate activation anneal at 1123 K in nitrogen; the interface trap density at mid-band gap decreased to ≊(1-2)×1011 cm-2 eV-1 after this process. The mean breakdown strength for anodic oxides grown under optimum conditions was 10.87±0.83 MV cm-1. Electrical properties of the 5.4-8-nm gates compared well with thicker films and control dry thermal oxides of similar thicknesses.
Superconducting dc Current Limiting Vacuum Circuit Breaker

NASA Astrophysics Data System (ADS)

Alferov, D. F.; Akhmetgareev, M. R.; Budovskii, A. I.; Bunin, R. A.; Voloshin, I. F.; Degtyarenko, P. N.; Yevsin, D. V.; Ivanov, V. P.; Sidorov, V. A.; Fisher, L. M.; Tshai, E. V.

Acircuitofadc superconductingfault current limiter witha direct current circuit-breaker fora nominal current 300A is proposed. It includes the 2G high temperature superconducting (HTS) tapes and the high-speed dc vacuum circuit breaker.Thetestresultsof current-limitingcapacityandrecoverytimeof superconductivityafter currentfaultatvoltage upto3 kV are presented.
Unity power factor converter

NASA Technical Reports Server (NTRS)

Wester, Gene W. (Inventor)

1980-01-01

A unity power factor converter capable of effecting either inversion (dc-to-dc) or rectification (ac-to-dc), and capable of providing bilateral power control from a DC source (or load) through an AC transmission line to a DC load (or source) for power flow in either direction, is comprised of comparators for comparing the AC current i with an AC signal i.sub.ref (or its phase inversion) derived from the AC ports to generate control signals to operate a switch control circuit for high speed switching to shape the AC current waveform to a sine waveform, and synchronize it in phase and frequency with the AC voltage at the AC ports, by selectively switching the connections to a series inductor as required to increase or decrease the current i.
The Isolation and Enrichment of Large Numbers of Highly Purified Mouse Spleen Dendritic Cell Populations and Their In Vitro Equivalents.

PubMed

Vremec, David

2016-01-01

Dendritic cells (DCs) form a complex network of cells that initiate and orchestrate immune responses against a vast array of pathogenic challenges. Developmentally and functionally distinct DC subtypes differentially regulate T-cell function. Importantly it is the ability of DC to capture and process antigen, whether from pathogens, vaccines, or self-components, and present it to naive T cells that is the key to their ability to initiate an immune response. Our typical isolation procedure for DC from murine spleen was designed to efficiently extract all DC subtypes, without bias and without alteration to their in vivo phenotype, and involves a short collagenase digestion of the tissue, followed by selection for cells of light density and finally negative selection for DC. The isolation procedure can accommodate DC numbers that have been artificially increased via administration of fms-like tyrosine kinase 3 ligand (Flt3L), either directly through a series of subcutaneous injections or by seeding with an Flt3L secreting murine melanoma. Flt3L may also be added to bone marrow cultures to produce large numbers of in vitro equivalents of the spleen DC subsets. Total DC, or their subsets, may be further purified using immunofluorescent labeling and flow cytometric cell sorting. Cell sorting may be completely bypassed by separating DC subsets using a combination of fluorescent antibody labeling and anti-fluorochrome magnetic beads. Our procedure enables efficient separation of the distinct DC subsets, even in cases where mouse numbers or flow cytometric cell sorting time is limiting.

Battery charging and discharging research based on the interactive technology of smart grid and electric vehicle

NASA Astrophysics Data System (ADS)

Zhang, Mingyang

2018-06-01

To further study the bidirectional flow problem of V2G (Vehicle to Grid) charge and discharge motor, the mathematical model of AC/DC converter and bi-directional DC/DC converter was established. Then, lithium battery was chosen as the battery of electric vehicle and its mathematical model was established. In order to improve the service life of lithium battery, bidirectional DC/DC converter adopted constant current and constant voltage control strategy. In the initial stage of charging, constant current charging was adopted with current single closed loop control. After reaching a certain value, voltage was switched to constant voltage charging controlled by voltage and current. Subsequently, the V2G system simulation model was built in MATLAB/Simulink. The simulation results verified the correctness of the control strategy and showed that when charging, constant current and constant voltage charging was achieved, the grid side voltage and current were in the same phase, and the power factor was about 1. When discharging, the constant current discharge was applied, and the grid voltage and current phase difference was r. To sum up, the simulation results are correct and helpful.
Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

NASA Astrophysics Data System (ADS)

Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

2017-04-01

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.
Orthogonal fluxgate mechanism operated with dc biased excitation

NASA Astrophysics Data System (ADS)

Sasada, I.

2002-05-01

A mode of operation is presented for an orthogonal fluxgate built with a thin magnetic wire. By adding a proper dc bias to the wire excitation, the new mode is easily established. In this case, the fundamental component of the induced voltage at the sensing coil (secondary voltage) is made sensitive to the axial magnetic field, compared to the second harmonic in a conventional orthogonal fluxgate. The operating principle is explained using a magnetization rotation model. A method is proposed to cancel the offset that is inevitable when the magnetic anisotropy is present in a magnetic wire at an angle to its circumference. Experimental results are shown for a sensor head consisting of a 2-cm-long Co-based amorphous wire 120 μm in diameter with a 220-turn sensing coil. The sensitivity obtained is higher than that obtained using a conventional type of the orthogonal fluxgate built with the same sensor head. It is also demonstrated that the proposed method for canceling the offset works well.
Modelling IRF8 Deficient Human Hematopoiesis and Dendritic Cell Development with Engineered iPS Cells.

PubMed

Sontag, Stephanie; Förster, Malrun; Qin, Jie; Wanek, Paul; Mitzka, Saskia; Schüler, Herdit M; Koschmieder, Steffen; Rose-John, Stefan; Seré, Kristin; Zenke, Martin

2017-04-01

Human induced pluripotent stem (iPS) cells can differentiate into cells of all three germ layers, including hematopoietic stem cells and their progeny. Interferon regulatory factor 8 (IRF8) is a transcription factor, which acts in hematopoiesis as lineage determining factor for myeloid cells, including dendritic cells (DC). Autosomal recessive or dominant IRF8 mutations occurring in patients cause severe monocytic and DC immunodeficiency. To study IRF8 in human hematopoiesis we generated human IRF8-/- iPS cells and IRF8-/- embryonic stem (ES) cells using RNA guided CRISPR/Cas9n genome editing. Upon induction of hematopoietic differentiation, we demonstrate that IRF8 is dispensable for iPS cell and ES cell differentiation into hemogenic endothelium and for endothelial-to-hematopoietic transition, and thus development of hematopoietic progenitors. We differentiated iPS cell and ES cell derived progenitors into CD141+ cross-presenting cDC1 and CD1c+ classical cDC2 and CD303+ plasmacytoid DC (pDC). We found that IRF8 deficiency compromised cDC1 and pDC development, while cDC2 development was largely unaffected. Additionally, in an unrestricted differentiation regimen, IRF8-/- iPS cells and ES cells exhibited a clear bias toward granulocytes at the expense of monocytes. IRF8-/- DC showed reduced MHC class II expression and were impaired in cytokine responses, migration, and antigen presentation. Taken together, we engineered a human IRF8 knockout model that allows studying molecular mechanisms of human immunodeficiencies in vitro, including the pathophysiology of IRF8 deficient DC. Stem Cells 2017;35:898-908. © 2017 The Authors Stem Cells published by Wiley Periodicals, Inc. on behalf of AlphaMed Press.
Photoinduced Bulk Polarization and Its Effects on Photovoltaic Actions in Perovskite Solar Cells.

PubMed

Wu, Ting; Collins, Liam; Zhang, Jia; Lin, Pei-Ying; Ahmadi, Mahshid; Jesse, Stephen; Hu, Bin

2017-11-28

This article reports an experimental demonstration of photoinduced bulk polarization in hysteresis-free methylammonium (MA) lead-halide perovskite solar cells [ITO/PEDOT:PSS/perovskite/PCBM/PEI/Ag]. An anomalous capacitance-voltage (CV) signal is observed as a broad "shoulder" in the depletion region from -0.5 to +0.5 V under photoexcitation based on CV measurements where a dc bias is gradually scanned to continuously drift mobile ions in order to detect local polarization under a low alternating bias (50 mV, 5 kHz). Essentially, gradually scanning the dc bias and applying a low alternating bias can separately generate continuously drifting ions and a bulk CV signal from local polarization under photoexcitation. Particularly, when the device efficiency is improved from 12.41% to 18.19% upon chlorine incorporation, this anomalous CV signal can be enhanced by a factor of 3. This anomalous CV signal can be assigned as the signature of photoinduced bulk polarization by distinguishing from surface polarization associated with interfacial charge accumulation. Meanwhile, replacing easy-rotational MA + with difficult-rotational formamidinium (FA + ) cations largely minimizes such anomalous CV signal, suggesting that photoinduced bulk polarization relies on the orientational freedom of dipolar organic cations. Furthermore, a Kelvin probe force microscopy study shows that chlorine incorporation can suppress the density of charged defects and thus enhances photoinduced bulk polarization due to the reduced screening effect from charged defects. A bias-dependent photoluminescence study indicates that increasing bulk polarization can suppress carrier recombination by decreasing charge capture probability through the Coulombic screening effect. Clearly, our studies provide an insightful understanding of photoinduced bulk polarization and its effects on photovoltaic actions in perovskite solar cells.
Direct Current as an Integrating Platform for ZNE Buildings with EVs and Storage: DC Direct Systems – A Bridge to a Low Carbon Future?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Karl; Vossos, Vagelis; Kloss, Margarita

2016-09-01

Cost effective zero net energy (ZNE) schemes exist for many types of residential and commercial buildings. Yet, today’s alternating current (AC) based ZNE designs may be as much as 10% to 20% less efficient, more costly, and more complicated than a design based on direct current (DC) technologies. An increasing number of research organizations and manufacturers are just starting the process of developing products and conducting research and development (R&D) efforts. These early R&D efforts indicate that the use of DC technologies may deliver many energy and non-energy benefits relative to AC-based typologies. DC ZNE schemes may provide for anmore » ideal integrating platform for natively DC-based onsite generation, storage, electric vehicle (EV) charging and end-use loads. Emerging empirical data suggest that DC end-use appliances are more efficient, simpler, more durable, and lower cost. DC technologies appear to provide ratepayers a lower cost pathway to achieve resilient ZNE buildings, and simultaneously yield a plethora of benefits. This paper draws from the current research effort entitled "Direct Current as an Integrating and Enabling Platform," co-led by the Lawrence Berkeley National Laboratory (LBNL), the California Institute for Energy and the Environment (CIEE), the Electric Power Research Institute (EPRI) and funded under the California Energy Commission’s Energy Program Investment Charge (CEC EPIC). The first phase of this EPIC research is focused on assembling and summarizing known global performance information on DC and DC-AC hybrid end-use appliances and power systems. This paper summarizes the information and insights gained from this research effort.« less
Power conversion apparatus and method

DOEpatents

Su, Gui-Jia [Knoxville, TN

2012-02-07

A power conversion apparatus includes an interfacing circuit that enables a current source inverter to operate from a voltage energy storage device (voltage source), such as a battery, ultracapacitor or fuel cell. The interfacing circuit, also referred to as a voltage-to-current converter, transforms the voltage source into a current source that feeds a DC current to a current source inverter. The voltage-to-current converter also provides means for controlling and maintaining a constant DC bus current that supplies the current source inverter. The voltage-to-current converter also enables the current source inverter to charge the voltage energy storage device, such as during dynamic braking of a hybrid electric vehicle, without the need of reversing the direction of the DC bus current.
A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

NASA Technical Reports Server (NTRS)

Subramanyam, Guru; VanKeuls, Fred; Miranda, Felix A.

1998-01-01

We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.
The dc power circuits: A compilation

NASA Technical Reports Server (NTRS)

1972-01-01

A compilation of reports concerning power circuits is presented for the dissemination of aerospace information to the general public as part of the NASA Technology Utilization Program. The descriptions for the electronic circuits are grouped as follows: dc power supplies, power converters, current-voltage power supply regulators, overload protection circuits, and dc constant current power supplies.
Simultaneous distribution of AC and DC power

DOEpatents

Polese, Luigi Gentile

2015-09-15

A system and method for the transport and distribution of both AC (alternating current) power and DC (direct current) power over wiring infrastructure normally used for distributing AC power only, for example, residential and/or commercial buildings' electrical wires is disclosed and taught. The system and method permits the combining of AC and DC power sources and the simultaneous distribution of the resulting power over the same wiring. At the utilization site a complementary device permits the separation of the DC power from the AC power and their reconstruction, for use in conventional AC-only and DC-only devices.
Improved Signal Chains for Readout of CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

2009-01-01

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.
Push-pull switching power amplifier

NASA Technical Reports Server (NTRS)

Cuk, Slobodan M. (Inventor)

1980-01-01

A true push-pull switching power amplifier is disclosed utilizing two dc-to-dc converters. Each converter is comprised of two inductances, one inductance in series with a DC source and the other inductor in series with the output load, and an electrical energy transferring device with storage capability, namely storage capacitance, with suitable switching means between the inductances to obtain DC level conversion, where the switching means allows bidirectional current (and power) flow, and the switching means of one dc-to-dc converter is driven by the complement of a square-wave switching signal for the other dc-to-dc converter for true push-pull operation. For reduction of current ripple, the inductances in each of the two converters may be coupled, and with proper design of the coupling, the ripple can be reduced to zero at either the input or the output, but preferably the output.
Fabrication and investigation of photosensitive MoOx/n-CdTe heterojunctions

NASA Astrophysics Data System (ADS)

Solovan, M. M.; Gavaleshko, N. M.; Brus, V. V.; Mostovyi, A. I.; Maryanchuk, P. D.; Tresso, E.

2016-10-01

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The obtained heterojunctions possessed sharply defined rectifying properties with the rectification ration RR ˜ 106. The temperature dependences of the height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance.
Demonstration of multi-generational growth of tungsten nanoparticles in hydrogen plasma using in situ laser extinction method

NASA Astrophysics Data System (ADS)

Ouaras, K.; Lombardi, G.; Hassouni, K.

2018-03-01

For the first time, we demonstrate that tungsten (W) nanoparticles (NPs) are created when a tungsten target is exposed to low-pressure, high density hydrogen plasma. The plasma was generated using a novel dual plasma system combining a microwave discharge and a pulsed direct-current (DC) discharge. The tungsten surface originates in the multi-generational formation of a significant population of 30-70 nm diameter particles when the W cathode is biased at ~ -1 kV and submitted to ~1020 m2 s-1 H+/H2+ /H3+ ions flux. The evidenced NPs formation should be taking into account as one of the consequence of the plasma surface interaction outcomes, especially for fusion applications.
Charge dissipative dielectric for cryogenic devices

NASA Technical Reports Server (NTRS)

Cantor, Robin Harold (Inventor); Hall, John Addison (Inventor)

2007-01-01

A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconductor substrate and at least one superconducting layer. The metal layer(s) are separated by or covered with a semiconductor material layer having the properties of a conductor at room temperature and the properties of an insulator at operating temperatures (generally less than 100 Kelvins). The properties of the semiconductor material layer greatly reduces the risk of electrostatic discharge that can damage the device during normal handling of the device at room temperature, while still providing the insulating properties desired to allow normal functioning of the device at its operating temperature. A method of manufacturing the SQUID device is also disclosed.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, T.; Yang, Z.; Dong, P.

The cold-cathode Penning ion gauge (PIG) type ion source has been used for generation of negative hydrogen (H{sup -}) ions as the internal ion source of a compact cyclotron. A novel method called electrical shielding box dc beam measurement is described in this paper, and the beam intensity was measured under dc extraction inside an electrical shielding box. The results of the trajectory simulation and dc H{sup -} beam extraction measurement were presented. The effect of gas flow rate, magnetic field strength, arc current, and extraction voltage were also discussed. In conclusion, the dc H{sup -} beam current of aboutmore » 4 mA from the PIG ion source with the puller voltage of 40 kV and arc current of 1.31 A was extrapolated from the measurement at low extraction dc voltages.« less
Giant Permittivity in Epitaxial Ferroelectric Heterostructures

NASA Astrophysics Data System (ADS)

Erbil, A.; Kim, Y.; Gerhardt, R. A.

1996-08-01

A giant permittivity associated with the motion of domain walls is reported in epitaxial hetero- structures having alternating layers of ferroelectric and nonferroelectric oxides. At low frequencies, permittivities as high as 420 000 are found. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field correlated with the dc bias-field dependence of ac permittivities. We interpret the observations as a result of the motion of a pinned domain wall lattice at low electric fields and sliding-mode motion at high electric fields.
Methods to characterize charging effects

NASA Astrophysics Data System (ADS)

Slots, H.

1984-08-01

Methods to characterize charging in insulating material under high voltage dc stress, leading to electrical breakdown, are reviewed. The behavior of the charges can be studied by ac loss angle measurements after application or removal of dc bias. Measurements were performed on oil-paper and oil-Mylar systems. The poor reproducibility of the measurements makes it impossible to draw more than qualitative conclusions about the charging effects. With an ultrasound pressure wave the electric field distribution in a material can be determined. An alternative derivation for the transient response of a system which elucidates the influence of several parameters in a simple way is given.
Selective accumulation of langerhans-type dendritic cells in small airways of patients with COPD

PubMed Central

2010-01-01

Background Dendritic cells (DC) linking innate and adaptive immune responses are present in human lungs, but the characterization of different subsets and their role in COPD pathogenesis remain to be elucidated. The aim of this study is to characterize and quantify pulmonary myeloid DC subsets in small airways of current and ex-smokers with or without COPD. Methods Myeloid DC were characterized using flowcytometry on single cell suspensions of digested human lung tissue. Immunohistochemical staining for langerin, BDCA-1, CD1a and DC-SIGN was performed on surgical resection specimens from 85 patients. Expression of factors inducing Langerhans-type DC (LDC) differentiation was evaluated by RT-PCR on total lung RNA. Results Two segregated subsets of tissue resident pulmonary myeloid DC were identified in single cell suspensions by flowcytometry: the langerin+ LDC and the DC-SIGN+ interstitial-type DC (intDC). LDC partially expressed the markers CD1a and BDCA-1, which are also present on their known blood precursors. In contrast, intDC did not express langerin, CD1a or BDCA-1, but were more closely related to monocytes. Quantification of DC in the small airways by immunohistochemistry revealed a higher number of LDC in current smokers without COPD and in COPD patients compared to never smokers and ex-smokers without COPD. Importantly, there was no difference in the number of LDC between current and ex-smoking COPD patients. In contrast, the number of intDC did not differ between study groups. Interestingly, the number of BDCA-1+ DC was significantly lower in COPD patients compared to never smokers and further decreased with the severity of the disease. In addition, the accumulation of LDC in the small airways significantly correlated with the expression of the LDC inducing differentiation factor activin-A. Conclusions Myeloid DC differentiation is altered in small airways of current smokers and COPD patients resulting in a selective accumulation of the LDC subset which correlates with the pulmonary expression of the LDC-inducing differentiation factor activin-A. This study identified the LDC subset as an interesting focus for future research in COPD pathogenesis. PMID:20307269
Exchange bias effect and glassy-like behavior of EuCrO{sub 3} and CeCrO{sub 3} nano-powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taheri, M., E-mail: maryam.taheri@brocku.ca; Razavi, F. S.; Kremer, R. K.

2015-09-28

The magnetic properties of nano-sized EuCrO{sub 3} and CeCrO{sub 3} powders, synthesized by a solution combustion method, were investigated using DC/AC magnetization measurements. An exchange bias effect, magnetization irreversibility and AC susceptibility dispersion in these samples provided evidence for the presence of the spin disorder magnetic phase. The exchange bias phenomenon, which is assigned to the exchange coupling between the glassy-like shell and canted antiferromagnetic core, showed the opposite sign in EuCrO{sub 3} and CeCrO{sub 3} at low temperatures, suggesting different exchange interactions at the interfaces in these compounds. We also observed a sign reversal of exchange bias in CeCrO{submore » 3} at different temperatures.« less

Hydrogenated nanostructure boron doped amorphous carbon films by DC bias

NASA Astrophysics Data System (ADS)

Ishak, A.; Dayana, K.; Saurdi, I.; Malek, M. F.; Rusop, M.

2018-03-01

Hydrogenated nanostructure-boron doped amorphous carbon thin film carbon was deposited at different negative bias using custom-made deposition bias assisted-CVD. Solid of boron and palm oil were used as dopant and carbon source, respectively. The hydrogenated nanostructure amorphous films were characterized by Field emission scanning electron microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, while the photo-response studies of thin film is done by I-V measurement under light measurement. The results showed the carbon film were in nanostructure with hydrogen and boron might be incorporated in the film. The Raman spectra observed the increase of upward shift of D and G peaks as negative bias increased which related to the structural change as boron incorporated in carbon network. These structural changes were further correlated with photo-response study and the results obtained are discussed and compared.
The U.S.S. PUEBLO Incident, Warning Cycle.

DTIC Science & Technology

1984-09-10

11. ŕ.8 111a-25 I~U2 MICROCOP RESOUTIO TES CHART II"’D 1 963 A112 111Z’ 𔃻 1 . Defense Intelligence College c I Washington, DC 20301-6111 APPROVAL...North Korean government. Obviously both sources have a definite bias. The bias that the Pueblo crew members may have is compounded by the fact that...Pinnacle II. Therefore, they were 77 • .. mp -p - extremely confused as to what was happening. CX’ This was compounded by the fact that there was no -i
DC current distribution mapping system of the solar panels using a HTS-SQUID gradiometer

NASA Astrophysics Data System (ADS)

Miyazaki, Shingo; Kasuya, Syohei; Mawardi Saari, Mohd; Sakai, Kenji; Kiwa, Toshihiko; Tsukamoto, Akira; Adachi, Seiji; Tanabe, Keiichi; Tsukada, Keiji

2014-05-01

Solar panels are expected to play a major role as a source of sustainable energy. In order to evaluate solar panels, non-destructive tests, such as defect inspections and response property evaluations, are necessary. We developed a DC current distribution mapping system of the solar panels using a High Critical Temperature Superconductor Superconducting Quantum Interference Device (HTS-SQUID) gradiometer with ramp edge type Josephson junctions. Two independent components of the magnetic fields perpendicular to the panel surface (∂Bz/∂x, ∂Bz/∂y) were detected. The direct current of the solar panel is visualized by calculating the composition of the two signal components, the phase angle, and mapping the DC current vector. The developed system can evaluate the uniformity of DC current distributions precisely and may be applicable for defect detection of solar panels.
Optimization of process parameters in the RF-DC plasma N2-H2 for AISI420 molds and dies

NASA Astrophysics Data System (ADS)

Herdianto, Hengky; Djoko, D. J.; Santjojo, H.; Masruroh

2017-11-01

The RF-DC plasma N2-H2 was used to make precise AISI420 molds and dies have complex textured geometry. The quality of the molds and dies directly affect the quality of the produced parts. The excellent examples of molds were used for injection molding lenses and dies used for the precision forging of automotive drive train components. In this study, a temperature, DC bias, and duration as process parameters of the RF-DC plasma N2-H2 have been optimized for molds and dies fabrication. The mask-less micro-patterned method was utilized to draw the initial 2D micro patterns directly onto the AISI420 substrate surface. The unprinted substrate surfaces were selectively nitrided by the RF-DC plasma N2-H2 at 673 K for 5400 s by 70 Pa with hollow cathode device. Energy Dispersive X-ray was utilized to describe the nitrogen content distribution at the vicinity of the border between the unprinted surfaces. This exclusive nitrogen mapping proves that only the unprinted parts of the substrate have high content nitrogen solutes. XRD analysis was performed to investigate whether the iron nitrides were precipitated by RF-DC plasma N2-H2 in the AISI420.
Comparison of direct current and 50 Hz alternating current microscopic corona characteristics on conductors

NASA Astrophysics Data System (ADS)

Zhang, Shuai; Zhang, Bo; He, Jinliang

2014-06-01

Corona discharge is one of the major design factors for extra-high voltage and ultra-high voltage DC/AC transmission lines. Under different voltages, corona discharge reveals different characteristics. This paper aims at investigating DC and AC coronas on the microscopic scale. To obtain the specific characteristics of DC and AC coronas, a new measurement approach that utilizes a coaxial wire-cylinder corona cage is designed in this paper, and wires of different diameters are used in the experiment. Based on the measurements, the respective microscopic characteristics of DC and AC coronas are analyzed and compared. With differences in characteristics between DC and AC coronas proposed, this study provides useful insights into DC/AC corona discharges on transmission line applications.
Onboard power line conditioning system for an electric or hybrid vehicle

DOEpatents

Kajouke, Lateef A.; Perisic, Milun

2016-06-14

A power line quality conditioning system for a vehicle includes an onboard rechargeable direct current (DC) energy storage system and an onboard electrical system coupled to the energy storage system. The energy storage system provides DC energy to drive an electric traction motor of the vehicle. The electrical system operates in a charging mode such that alternating current (AC) energy from a power grid external to the vehicle is converted to DC energy to charge the DC energy storage system. The electrical system also operates in a vehicle-to-grid power conditioning mode such that DC energy from the DC energy storage system is converted to AC energy to condition an AC voltage of the power grid.
Multilevel DC link inverter

DOEpatents

Su, Gui-Jia

2003-06-10

A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.
75 FR 47199 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-9-10 Series Airplanes, DC-9-30...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-05

... Airplanes, DC-9-81 (MD-81) Airplanes, DC-9-82 (MD-82) Airplanes, DC-9-83 (MD-83) Airplanes, DC-9- 87 (MD-87...) airplanes, DC-9-87 (MD-87) airplanes, MD-88 airplanes, and MD-90-30 airplanes. That AD currently requires... INFORMATION: Discussion On June 18, 2010, we issued AD 2009-15-16, Amendment 39-16345 (75 FR 38017, July 1...
A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

NASA Astrophysics Data System (ADS)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.
Up-converted 1/f PM and AM noise in linear HBT amplifiers.

PubMed

Ferre-Pikal, Eva S; Savage, Frederick H

2008-08-01

In this paper we describe a technique to predict the 1/f phase modulation (PM) and 1/f amplitude modulation (AM) noise due to up-conversion of 1/f baseband current noise in microwave heterojunction bipolar transistor (HBT) amplifiers. We obtain an accurate model for the amplifier and find the expression for voltage gain in terms of DC bias, transistor parameters, and circuit components. Theoretical 1/f PM and AM noise sensitivities to 1/f baseband current noise are then found by applying the definitions of PM and AM noise to the gain expression of the amplifier. Measurements of PM and AM sensitivities at 500 MHz and 1 GHz were in good agreement with the values predicted by theory, verifying the validity of this technique. This method can be used to optimize amplifier design for low PM and AM noise. We show that the amplifier PM noise can be reduced by 9 dB by adjusting the value of the input coupling capacitor.
High Voltage Power Supply Design Guide for Space

NASA Technical Reports Server (NTRS)

Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

2006-01-01

This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.
A study on improvement of discharge characteristic by using a transformer in a capacitively coupled plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Young-Cheol; Kim, Hyun-Jun; Lee, Hyo-Chang

In a plasma discharge system, the power loss at powered line, matching network, and other transmission line can affect the discharge characteristics such as the power transfer efficiency, voltage and current at powered electrode, and plasma density. In this paper, we propose a method to reduce power loss by using a step down transformer mounted between the matching network and the powered electrode in a capacitively coupled argon plasma. This step down transformer decreases the power loss by reducing the current flowing through the matching network and transmission line. As a result, the power transfer efficiency was increased about 5%–10%more » by using a step down transformer. However, the plasma density was dramatically increased compared to no transformer. This can be understood by the increase in ohmic heating and the decrease in dc-self bias. By simply mounting a transformer, improvement of discharge efficiency can be achieved in capacitively coupled plasmas.« less
Mobility overestimation due to gated contacts in organic field-effect transistors

PubMed Central

Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

2016-01-01

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271
ELECTRONIC PHASE CONTROL CIRCUIT

DOEpatents

Salisbury, J.D.; Klein, W.W.; Hansen, C.F.

1959-04-21

An electronic circuit is described for controlling the phase of radio frequency energy applied to a multicavity linear accelerator. In one application of the circuit two cavities are excited from a single radio frequency source, with one cavity directly coupled to the source and the other cavity coupled through a delay line of special construction. A phase detector provides a bipolar d-c output signal proportional to the difference in phase between the voltage in the two cavities. This d-c signal controls a bias supply which provides a d-c output for varying the capacitnce of voltage sensitive capacitors in the delay line. The over-all operation of the circuit is completely electronic, overcoming the time response limitations of the electromechanical control systems, and the relative phase relationship of the radio frequency voltages in the two caviiies is continuously controlled to effect particle acceleration.
DC to DC power converters and methods of controlling the same

DOEpatents

Steigerwald, Robert Louis; Elasser, Ahmed; Sabate, Juan Antonio; Todorovic, Maja Harfman; Agamy, Mohammed

2012-12-11

A power generation system configured to provide direct current (DC) power to a DC link is described. The system includes a first power generation unit configured to output DC power. The system also includes a first DC to DC converter comprising an input section and an output section. The output section of the first DC to DC converter is coupled in series with the first power generation unit. The first DC to DC converter is configured to process a first portion of the DC power output by the first power generation unit and to provide an unprocessed second portion of the DC power output of the first power generation unit to the output section.
Analysis and Design of Bridgeless Switched Mode Power Supply for Computers

NASA Astrophysics Data System (ADS)

Singh, S.; Bhuvaneswari, G.; Singh, B.

2014-09-01

Switched mode power supplies (SMPSs) used in computers need multiple isolated and stiffly regulated output dc voltages with different current ratings. These isolated multiple output dc voltages are obtained by using a multi-winding high frequency transformer (HFT). A half-bridge dc-dc converter is used here for obtaining different isolated and well regulated dc voltages. In the front end, non-isolated Single Ended Primary Inductance Converters (SEPICs) are added to improve the power quality in terms of low input current harmonics and high power factor (PF). Two non-isolated SEPICs are connected in a way to completely eliminate the need of single-phase diode-bridge rectifier at the front end. Output dc voltages at both the non-isolated and isolated stages are controlled and regulated separately for power quality improvement. A voltage mode control approach is used in the non-isolated SEPIC stage for simple and effective control whereas average current control is used in the second isolated stage.
Temperature-dependent performance of all-NbN DC-SQUID magnetometers

NASA Astrophysics Data System (ADS)

Liu, Quansheng; Wang, Huiwu; Zhang, Qiyu; Wang, Hai; Peng, Wei; Wang, Zhen

2017-05-01

Integrated NbN direct current superconducting quantum interference device (DC-SQUID) magnetometers were developed based on high-quality epitaxial NbN/AlN/NbN Josephson junctions for SQUID applications operating at high temperatures. We report the current-voltage and voltage-flux characteristics and the noise performance of the NbN DC-SQUIDs for temperatures ranging from 4.2 to 9 K. The critical current and voltage swing of the DC-SQUIDs decreased by 15% and 25%, respectively, as the temperature was increased from 4.2 to 9 K. The white flux noise of the DC-SQUID magnetometer at 1 kHz increased from 3.9 μΦ0/Hz1/2 at 4.2 K to 4.8 μΦ0/Hz1/2 at 9 K with 23% increase, corresponding to the magnetic field noise of 6.6 and 8.1 fT/Hz1/2, respectively. The results show that NbN DC-SQUIDs improve the tolerance of the operating temperatures and temperature fluctuations in SQUID applications.
Electrical shielding box measurement of the negative hydrogen beam from Penning ion gauge ion source.

PubMed

Wang, T; Yang, Z; Dong, P; long, J D; He, X Z; Wang, X; Zhang, K Z; Zhang, L W

2012-06-01

The cold-cathode Penning ion gauge (PIG) type ion source has been used for generation of negative hydrogen (H(-)) ions as the internal ion source of a compact cyclotron. A novel method called electrical shielding box dc beam measurement is described in this paper, and the beam intensity was measured under dc extraction inside an electrical shielding box. The results of the trajectory simulation and dc H(-) beam extraction measurement were presented. The effect of gas flow rate, magnetic field strength, arc current, and extraction voltage were also discussed. In conclusion, the dc H(-) beam current of about 4 mA from the PIG ion source with the puller voltage of 40 kV and arc current of 1.31 A was extrapolated from the measurement at low extraction dc voltages.
Radiation detector spectrum simulator

DOEpatents

Wolf, Michael A.; Crowell, John M.

1987-01-01

A small battery operated nuclear spectrum simulator having a noise source nerates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith generates several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.
Radiation detector spectrum simulator

DOEpatents

Wolf, M.A.; Crowell, J.M.

1985-04-09

A small battery operated nuclear spectrum simulator having a noise source generates pulses with a Gaussian distribution of amplitudes. A switched dc bias circuit cooperating therewith to generate several nominal amplitudes of such pulses and a spectral distribution of pulses that closely simulates the spectrum produced by a radiation source such as Americium 241.

The Model Analyst’s Toolkit: Scientific Model Development, Analysis, and Validation

DTIC Science & Technology

2015-05-20

biased for a variety of reasons, and neurological and physiological data can be corrupted by broken or improperly used sensors. If it were possible...War and Development Policy. Washington, DC: World Bank and Oxford University Press. Collier, P. and Hoeffler, A. (2004). " Greed and Grievances in
Microcurrent therapeutic technique for treatment of radiation toxicity

DOEpatents

Lennox, Arlene; Funder, Sandra

2000-01-01

The present technique provides a method of remediating the toxicities associated with radiation therapy. A conductive gel is applied to the affected bodily area. A sinusoidally pulsed biphasic DC current is then applied to the affected bodily area using at least one electrode. The electrode is manipulated using active tactile manipulation by for a predetermined time and the frequency of the sinusoidally pulsed biphasic DC current is decreased during the course of the treatment. The method also includes applying a spiked pulsed biphasic DC current to the affected bodily area using at least one electrode. This electrode is also manipulated using active tactile manipulation by for a predetermined time and the frequency of the spiked pulsed biphasic DC current is also decreased during the course of the treatment.
Frequency analysis of DC tolerant current transformers

NASA Astrophysics Data System (ADS)

Mlejnek, P.; Kaspar, P.

2013-09-01

This article deals with wide frequency range behaviour of DC tolerant current transformers that are usually used in modern static energy meters. In this application current transformers must comply with European and International Standards in their accuracy and DC tolerance. Therefore, the linear DC tolerant current transformers and double core current transformers are used in this field. More details about the problems of these particular types of transformers can be found in our previous works. Although these transformers are designed mainly for power distribution network frequency (50/60 Hz), it can be interesting to understand their behaviour in wider frequency range. Based on this knowledge the new generations of energy meters with measuring quality of electric energy will be produced. This solution brings better measurement of consumption of nonlinear loads or measurement of non-sinusoidal voltage and current sources such as solar cells or fuel cells. The determination of actual power consumption in such energy meters is done using particular harmonics component of current and voltage. We measured the phase and ratio errors that are the most important parameters of current transformers, to characterize several samples of current transformers of both types.
Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J. E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {>=}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {>=}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less
Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {ge}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {ge}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less
Origin of microplasma instabilities during DC operation of silicon based microhollow cathode devices

NASA Astrophysics Data System (ADS)

Felix, Valentin; Lefaucheux, Philippe; Aubry, Olivier; Golda, Judith; Schulz-von der Gathen, Volker; Overzet, Lawrence J.; Dussart, Rémi

2016-04-01

The failure mechanisms of micro hollow cathode discharges (MHCD) in silicon have been investigated using their I-V characteristics, high speed photography and scanning electron microscopy. Experiments were carried out in helium. We observed I-V instabilities in the form of rapid voltage decreases associated with current spikes. The current spikes can reach values more than 100 times greater than the average MHCD current. (The peaks can be more than 1 Ampere for a few 10’s of nanoseconds.) These current spikes are correlated in time with 3-10 μm diameter optical flashes that occur inside the cavities. The SEM characterizations indicated that blister-like structures form on the Si surface during plasma operation. Thin Si layers detach from the surface in localized regions. We theorize that shallow helium implantation occurs and forms the ‘blisters’ whenever the Si is biased as the cathode. These blisters ‘explode’ when the helium pressure inside them becomes too large leading to the transient micro-arcs seen in both the optical emission and the I-V characteristics. We noted that blisters were never found on the metal counter electrode, even when it was biased as the cathode (and the Si as the anode). This observation led to a few suggestions for delaying the failure of Si MHCDs. One may coat the Si cathode (cavities) with blister resistant material; design the MHCD array to operate with the Si as the anode rather than as the cathode; or use a gas additive to prevent surface damage. Regarding the latter, tests using SF6 as the gas additive successfully prevented blister formation through rapid etching. The result was an enhanced MHCD lifetime.
Generalization of the Child-Langmuir law to the alternate extraction of positive and negative ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lafleur, T., E-mail: trevor.lafleur@lpp.polytechnique.fr; ONERA-The French Aerospace Lab, 91120 Palaiseau; Aanesland, A.

Using a combined analytical and simulation approach, we investigate positive and negative ion extraction between two electrodes from an ion-ion plasma source. With a square voltage waveform applied to the electrodes, we obtain approximate analytical solutions for the time-averaged extracted current densities, which are given simply by: J{sub p}{sup ac}=[α−fL√((M{sub p})/(q{sub p}V{sub 0}) )]J{sub p}{sup dc}, and J{sub n}{sup ac}=[(1−α)−fL√((M{sub n})/(q{sub n}V{sub 0}) )]J{sub n}{sup dc}, where J{sup ac} is the time-averaged current density, α is the square waveform duty cycle, f is the frequency, L is the electrode gap length, M is the ion mass, q is the ionmore » charge, V{sub 0} is the applied voltage amplitude, J{sup dc} is the dc extracted current density, and the subscripts p and n refer to positive and negative ions, respectively. In particular, if J{sup dc} is the dc space-charge limited current density, then these equations describe the square waveform generalization of the Child-Langmuir law.« less
Feasibility analysis of a novel hybrid-type superconducting circuit breaker in multi-terminal HVDC networks

NASA Astrophysics Data System (ADS)

Khan, Umer Amir; Lee, Jong-Geon; Seo, In-Jin; Amir, Faisal; Lee, Bang-Wook

2015-11-01

Voltage source converter-based HVDC systems (VSC-HVDC) are a better alternative than conventional thyristor-based HVDC systems, especially for developing multi-terminal HVDC systems (MTDC). However, one of the key obstacles in developing MTDC is the absence of an adequate protection system that can quickly detect faults, locate the faulty line and trip the HVDC circuit breakers (DCCBs) to interrupt the DC fault current. In this paper, a novel hybrid-type superconducting circuit breaker (SDCCB) is proposed and feasibility analyses of its application in MTDC are presented. The SDCCB has a superconducting fault current limiter (SFCL) located in the main current path to limit fault currents until the final trip signal is received. After the trip signal the IGBT located in the main line commutates the current into a parallel line where DC current is forced to zero by the combination of IGBTs and surge arresters. Fault simulations for three-, four- and five-terminal MTDC were performed and SDCCB performance was evaluated in these MTDC. Passive current limitation by SFCL caused a significant reduction of fault current interruption stress in the SDCCB. It was observed that the DC current could change direction in MTDC after a fault and the SDCCB was modified to break the DC current in both the forward and reverse directions. The simulation results suggest that the proposed SDCCB could successfully suppress the DC fault current, cause a timely interruption, and isolate the faulty HVDC line in MTDC.
Power-MOSFET Voltage Regulator

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.
Injection locking at 2f of spin torque oscillators under influence of thermal noise.

PubMed

Tortarolo, M; Lacoste, B; Hem, J; Dieudonné, C; Cyrille, M-C; Katine, J A; Mauri, D; Zeltser, A; Buda-Prejbeanu, L D; Ebels, U

2018-01-29

Integration of Spin Torque Nano-Oscillators STNO's in conventional microwave circuits means that the devices have to meet certain specifications. One of the most important criteria is the phase noise, being the key parameter to evaluate the performance and define possible applications. Phase locking several oscillators together has been suggested as a possible means to decrease phase noise and consequently, the linewidth. In this work we present experiments, numerical simulations and an analytic model to describe the effects of thermal noise in the injection locking of a tunnel junction based STNO. The analytics show the relation of the intrinsic parameters of the STNO with the phase noise level, opening the path to tailor the spectral characteristics by the magnetic configuration. Experiments and simulations demonstrate that in the in-plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Moreover, our analysis shows that it is possible to control the phase noise by the reference microwave current (I RF ) and that it can be further reduced by increasing the bias current (I DC ) of the oscillator, keeping the reference current in feasible limits for applications.
77 FR 55693 - D&C Red No. 6 and D&C Red No. 7; Change in Specification; Confirmation of Effective Date

Federal Register 2010, 2011, 2012, 2013, 2014

2012-09-11

... DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration 21 CFR Part 74 [Docket No. FDA-2011-C-0050] D&C Red No. 6 and D&C Red No. 7; Change in Specification; Confirmation of Effective... the requirements for D&C Red No. 6 and D&C Red No. 7 by replacing the current specification for...
A Cryogenic Dc-Dc Power Converter for a 100 kW Synchronous HTS Generator at Liquid Nitrogen Temperatures

NASA Astrophysics Data System (ADS)

Bailey, Wendell; Wen, Hauming; Yang, Yifeng; Forsyth, Andrew; Jia, Chungjiang

A dc-dc converter has been developed for retrofitting inside the vacuum space of the HTS rotor of a synchronous generator. The heavy copper sections of the current leads used for energising the HTS field winding were replaced by cryogenic power electronics; consisting of the converter and a rotor control unit. The converter board was designed using an H-bridge configuration with two 5A rated wires connecting the cryogenic boards to the stator control board located on the outside of the generator and drawing power from a (5A, 50 V) dc power source. The robustness of converter board was well demonstrated when it was powered up from a cold start at 82K. When charging the field winding with moderate currents (30A), the heat in-leak to the 'cold' rotor core was only 2W. It continued to function down to 74K, surviving several quenches. However, the quench protection function failed when injecting 75A into the field winding, resulting in the burn out of one of the DC-link capacitors. The magnitudes of the critical currents measured with the original current leads were compared to the quench currents, which was defined as the current which triggered quench protection protocol. The difference between the two currents was rather large, (∼20A). However, additional measurements using a single HTS coil in liquid nitrogen found that this reduction should not be so dramatic and in the region of 4A. Our conclusions identified the converter's switching voltage and its operating frequency as two parameters, which could have contributed to lowering the quench current. Magnetic fields and eddy currents are expected to be more prominent the field winding and its impact on the converter also need further investigation.
Optical and electrical properties of TiOPc doped Alq3 thin films

NASA Astrophysics Data System (ADS)

Ramar, M.; Suman, C. K.; Tyagi, Priyanka; Srivastava, R.

2015-06-01

The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq3 and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-charge limited region (SCLC) is 0.17×10-5 cm2/Vs. The Cole-Cole plots shows that the TiOPc doped Alq3 thin film can be represented by a single parallel resistance RP and capacitance CP network with a series resistance RS (10 Ω). The value of RP and CP at zero bias was 1587 Ω and 2.568 nF respectively. The resistance RP decreases with applied bias whereas the capacitance CP remains almost constant.
Comparison of direct current and 50 Hz alternating current microscopic corona characteristics on conductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shuai, E-mail: zhangshuai94@gmail.com; Zhang, Bo, E-mail: shizbcn@mail.tsinghua.edu.cn; He, Jinliang, E-mail: hejl@tsinghua.edu.cn

Corona discharge is one of the major design factors for extra-high voltage and ultra-high voltage DC/AC transmission lines. Under different voltages, corona discharge reveals different characteristics. This paper aims at investigating DC and AC coronas on the microscopic scale. To obtain the specific characteristics of DC and AC coronas, a new measurement approach that utilizes a coaxial wire-cylinder corona cage is designed in this paper, and wires of different diameters are used in the experiment. Based on the measurements, the respective microscopic characteristics of DC and AC coronas are analyzed and compared. With differences in characteristics between DC and ACmore » coronas proposed, this study provides useful insights into DC/AC corona discharges on transmission line applications.« less
Evaluation of constant current alternating current iontophoresis for transdermal drug delivery.

PubMed

Yan, Guang; Li, S Kevin; Higuchi, William I

2005-12-10

Previous studies in our laboratory have demonstrated that alternating current (AC) iontophoresis can significantly decrease skin electric resistance and enhance the transport of charged permeants across skin. Flux variability of neutral permeants during AC iontophoresis was also found to be less than that of conventional direct current (DC) iontophoresis. The objectives of the present study were to evaluate flux enhancement of constant current AC transdermal iontophoresis and compare the AC flux with that of constant current DC iontophoresis. Iontophoresis studies of AC amplitude of 1, 2, and 5 mA were conducted in side-by-side diffusion cells with donor solution of 0.015, 0.15, and 1.0 M tetraethylammonium (TEA) chloride and receiver solution of phosphate buffered saline (PBS) using human epidermal membrane (HEM). Conventional constant current DC iontophoresis of 0.2 mA was also performed under similar conditions. TEA and mannitol were the model permeants. The following are the major findings in the present study. The flux of TEA increased proportionally with the AC current for all three TEA chloride concentrations and at the AC frequency used in the present study. When the permeant and its counter ion were the only ionic species in the donor chamber, the fluxes during DC iontophoresis were weakly dependent of its donor concentration. The fluxes of TEA during constant current AC iontophoresis were moderately related to the donor concentration with the highest TEA flux observed under the 1.0 M TEA chloride condition although the relationship between flux and donor concentration was not linear. A trend of decreasing electroosmotic transport with increasing donor TEA chloride concentration was observed with significant sample-to-sample variability during DC iontophoresis. Mannitol permeability was also observed to decrease with increasing TEA chloride concentration in the donor under the AC conditions, but data variability under AC was significantly smaller than that under DC. The results in the present study indicate that constant current AC iontophoresis under conditions tolerable to human (2 and 5 mA) can provide predictable fluxes that were lower than but of comparable magnitude as those of conventional constant current DC iontophoresis (0.2 mA).
Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes

PubMed Central

Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu‐Jung; Oh, Seung Kyu; You, Shin‐Jae; Ryou, Jae‐Hyun

2017-01-01

Abstract The origin of plasma‐induced damage on a p‐type wide‐bandgap layer during the sputtering of tin‐doped indium oxide (ITO) contact layers by using radiofrequency‐superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light‐emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p‐GaN surface can reduce plasma‐induced damage to the p‐GaN. Furthermore, electron‐beam irradiation on p‐GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma‐induced damage to the p‐GaN. The plasma electrons can increase the effective barrier height at the ITO/deep‐level defect (DLD) band of p‐GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage‐free sputtered‐ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e‐beam‐evaporated ITO TCE. PMID:29619312
Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

PubMed

Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu-Jung; Oh, Seung Kyu; You, Shin-Jae; Ryou, Jae-Hyun; Kwak, Joon Seop

2018-02-01

The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p -GaN surface can reduce plasma-induced damage to the p -GaN. Furthermore, electron-beam irradiation on p -GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma-induced damage to the p -GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p -GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e-beam-evaporated ITO TCE.
Markovian Dynamics of Josephson Parametric Amplification

NASA Astrophysics Data System (ADS)

Kaiser, Waldemar; Haider, Michael; Russer, Johannes A.; Russer, Peter; Jirauschek, Christian

2017-09-01

In this work, we derive the dynamics of the lossy DC pumped non-degenerate Josephson parametric amplifier (DCPJPA). The main element in a DCPJPA is the superconducting Josephson junction. The DC bias generates the AC Josephson current varying the nonlinear inductance of the junction. By this way the Josephson junction acts as the pump oscillator as well as the time varying reactance of the parametric amplifier. In quantum-limited amplification, losses and noise have an increased impact on the characteristics of an amplifier. We outline the classical model of the lossy DCPJPA and derive the available noise power spectral densities. A classical treatment is not capable of including properties like spontaneous emission which is mandatory in case of amplification at the quantum limit. Thus, we derive a quantum mechanical model of the lossy DCPJPA. Thermal losses are modeled by the quantum Langevin approach, by coupling the quantized system to a photon heat bath in thermodynamic equilibrium. The mode occupation in the bath follows the Bose-Einstein statistics. Based on the second quantization formalism, we derive the Heisenberg equations of motion of both resonator modes. We assume the dynamics of the system to follow the Markovian approximation, i.e. the system only depends on its actual state and is memory-free. We explicitly compute the time evolution of the contributions to the signal mode energy and give numeric examples based on different damping and coupling constants. Our analytic results show, that this model is capable of including thermal noise into the description of the DC pumped non-degenerate Josephson parametric amplifier.
Zener diode controls switching of large direct currents

NASA Technical Reports Server (NTRS)

1965-01-01

High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.
Cyclotron resonance of the magnetic ratchet effect and second harmonic generation in bilayer graphene

NASA Astrophysics Data System (ADS)

Kheirabadi, Narjes; McCann, Edward; Fal'ko, Vladimir I.

2018-02-01

We model the magnetic ratchet effect in bilayer graphene in which a dc electric current is produced by an ac electric field of frequency ω in the presence of a steady in-plane magnetic field and inversion-symmetry breaking. In bilayer graphene, the ratchet effect is tunable by an external metallic gate which breaks inversion symmetry. For zero in-plane magnetic field, we show that trigonal warping and inversion-symmetry breaking are able to produce a large dc valley current, but not a nonzero total dc charge current. For the magnetic ratchet in a tilted magnetic field, the perpendicular field component induces cyclotron motion with frequency ωc and we find that the dc current displays cyclotron resonance at ωc=ω , although this peak in the current is actually smaller than its value at ωc=0 . Second harmonic generation, however, is greatly enhanced by resonances at ωc=ω and ωc=2 ω for which the current is generally much larger than at ωc=0 .

Application of drive circuit based on L298N in direct current motor speed control system

NASA Astrophysics Data System (ADS)

Yin, Liuliu; Wang, Fang; Han, Sen; Li, Yuchen; Sun, Hao; Lu, Qingjie; Yang, Cheng; Wang, Quanzhao

2016-10-01

In the experiment of researching the nanometer laser interferometer, our design of laser interferometer circuit system is up to the wireless communication technique of the 802.15.4 IEEE standard, and we use the RF TI provided by Basic to receive the data on speed control system software. The system's hardware is connected with control module and the DC motor. However, in the experiment, we found that single chip microcomputer control module is very difficult to drive the DC motor directly. The reason is that the DC motor's starting and braking current is larger than the causing current of the single chip microcomputer control module. In order to solve this problem, we add a driving module that control board can transmit PWM wave signal through I/O port to drive the DC motor, the driving circuit board can come true the function of the DC motor's positive and reversal rotation and speed adjustment. In many various driving module, the L298N module's integrated level is higher compared with other driver module. The L298N model is easy to control, it not only can control the DC motor, but also achieve motor speed control by modulating PWM wave that the control panel output. It also has the over-current protection function, when the motor lock, the L298N model can protect circuit and motor. So we use the driver module based on L298N to drive the DC motor. It is concluded that the L298N driver circuit module plays a very important role in the process of driving the DC motor in the DC motor speed control system.
[Preparation of electrodeposited Cr-La coating and its spectral properties].

PubMed

Liu, Xiao-zhen; Wang, Gang; Song, Ling-ling; Li, Xin; Zhu, Xu-qiang

2011-07-01

Cr-La coating (dc) and Cr-La coating (pulse) were prepared by electrodeposition method of direct current and pulsating current respectively. The Cr-La coating (dc) and Cr-La coating (pulse) were characterized with ICP-AES, EDAX, XRD and SEM techniques, respectively. Cr-La coating(dc) was amorphous. There were crystalline La and CrC in Cr-La coating (pulse). The microhardness of the Cr-La coating(dc) and Cr-La coating (pulse) were as high as 860.3 and 930.2 HV respectively, which were higher 11.15% and 20.18% higher than that of the Cr coating (774.0 HV). The wear weight losses of Cr-La coating(dc) and Cr-La coating(pulse) were 1.29 and 2.25 times lower than that of Cr coating, respectively. The friction coefficient of Cr coating, Cr-La coating(dc) and Cr-La coating(pulse) were 0. 884, 0. 640 and 0. 648 respectively. The properties of wear weight loss and microhardness of coatings were improved with pulsating current. The wear weight loss and microhardness of Cr-La coating(pulse) were lower 1.75 time lower and higher 8.13% higher than that of the Cr-La coating(dc), respectively.
Impacts on the Voltage Profile of DC Distribution Network with DG Access

NASA Astrophysics Data System (ADS)

Tu, J. J.; Yin, Z. D.

2017-07-01

With the development of electronic, more and more distributed generations (DGs) access into grid and cause the research fever of direct current (DC) distribution network. Considering distributed generation (DG) location and capacity have great impacts on voltage profile, so use IEEE9 and IEEE33 typical circuit as examples, with DGs access in centralized and decentralized mode, to compare voltage profile in alternating and direct current (AC/DC) distribution network. Introducing the voltage change ratio as an evaluation index, so gets the general results on voltage profile of DC distributed network with DG access. Simulation shows that, in the premise of reasonable location and capacity, DC distribution network is more suitable for DG access.
Pulse-Width-Modulating Driver for Brushless dc Motor

NASA Technical Reports Server (NTRS)

Salomon, Phil M.

1991-01-01

High-current pulse-width-modulating driver for brushless dc motor features optical coupling of timing signals from low-current control circuitry to high-current motor-driving circuitry. Provides high electrical isolation of motor-power supply, helping to prevent fast, high-current motor-driving pulses from being coupled through power supplies into control circuitry, where they interfere with low-current control signals.
Patterned Ferroelectric Films for Tunable Microwave Devices

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Mueller, Carl H.

2008-01-01

Tunable microwave devices based on metal terminals connected by thin ferroelectric films can be made to perform better by patterning the films to include suitably dimensioned, positioned, and oriented constrictions. The patterns can be formed during fabrication by means of selective etching processes. If the width of the ferroelectric film in such a device is reduced at one or more locations, then both the microwave field and any applied DC bias (tuning) electric field become concentrated at those locations. The magnitudes of both the permittivity and the dielectric loss of a ferroelectric material are reduced by application of a DC field. Because the concentration of the DC field in the constriction(s) magnifies the permittivity- and loss-reducing effects of the applied DC voltage, the permittivity and dielectric loss in the constriction(s) are smaller in the constriction(s) than they are in the wider parts of the ferroelectric film. Furthermore, inasmuch as displacement current must flow through either the constriction(s) or the low-loss dielectric substrate, the net effect of the constriction(s) is equivalent to that of incorporating one or more low-loss, low-permittivity region(s) in series with the high-loss, high-permittivity regions. In a series circuit, the properties of the low-capacitance series element (in this case, the constriction) dominate the overall performance. Concomitantly, the capacitance between the metal terminals is reduced. By making the capacitance between the metal terminals small but tunable, a constriction increases the upper limit of the frequency range amenable to ferroelectric tuning. The present patterning concept is expected to be most advantageous for devices and circuits that must operate at frequencies from about 4 to about 60 GHz. A constriction can be designed such that the magnitude of the microwave electric field and the effective width of the region occupied by the microwave electric field become functions of the applied DC electric field, so that tunability is enhanced. It should even be possible to design the constriction to obtain a specific tuning-versus-voltage profile.
Increased Energy Delivery for Parallel Battery Packs with No Regulated Bus

NASA Astrophysics Data System (ADS)

Hsu, Chung-Ti

In this dissertation, a new approach to paralleling different battery types is presented. A method for controlling charging/discharging of different battery packs by using low-cost bi-directional switches instead of DC-DC converters is proposed. The proposed system architecture, algorithms, and control techniques allow batteries with different chemistry, voltage, and SOC to be properly charged and discharged in parallel without causing safety problems. The physical design and cost for the energy management system is substantially reduced. Additionally, specific types of failures in the maximum power point tracking (MPPT) in a photovoltaic (PV) system when tracking only the load current of a DC-DC converter are analyzed. The periodic nonlinear load current will lead MPPT realized by the conventional perturb and observe (P&O) algorithm to be problematic. A modified MPPT algorithm is proposed and it still only requires typically measured signals, yet is suitable for both linear and periodic nonlinear loads. Moreover, for a modular DC-DC converter using several converters in parallel, the input power from PV panels is processed and distributed at the module level. Methods for properly implementing distributed MPPT are studied. A new approach to efficient MPPT under partial shading conditions is presented. The power stage architecture achieves fast input current change rate by combining a current-adjustable converter with a few converters operating at a constant current.
A Wide Area Bipolar Cascade Resonant Cavity Light Emitting Diode for a Hybrid Range-Intensity Sensor

DTIC Science & Technology

2008-06-19

forward bias voltage and a small amount of current flow- ing due to a forward biased tunnel current. (d) shows a drop in the forward bias current due...flowing due to a forward biased tunnel current. (d) shows a drop in the forward bias current due to the widening of the forbidden band, and fewer...3-14 xii Figure Page 3.10. Energy bands of a tunnel junction at various bias levels. (a) shows the junction under reverse bias with holes in
Single Event Burnout in DC-DC Converters for the LHC Experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Claudio H. Rivetta et al.

High voltage transistors in DC-DC converters are prone to catastrophic Single Event Burnout in the LHC radiation environment. This paper presents a systematic methodology to analyze single event effects sensitivity in converters and proposes solutions based on de-rating input voltage and output current or voltage.
Automatic generation and analysis of solar cell IV curves

DOEpatents

Kraft, Steven M.; Jones, Jason C.

2014-06-03

A photovoltaic system includes multiple strings of solar panels and a device presenting a DC load to the strings of solar panels. Output currents of the strings of solar panels may be sensed and provided to a computer that generates current-voltage (IV) curves of the strings of solar panels. Output voltages of the string of solar panels may be sensed at the string or at the device presenting the DC load. The DC load may be varied. Output currents of the strings of solar panels responsive to the variation of the DC load are sensed to generate IV curves of the strings of solar panels. IV curves may be compared and analyzed to evaluate performance of and detect problems with a string of solar panels.
Graphene bolometer with thermoelectric readout and capacitive coupling to an antenna

NASA Astrophysics Data System (ADS)

Skoblin, Grigory; Sun, Jie; Yurgens, August

2018-02-01

We report on a prototype graphene radiation detector based on the thermoelectric effect. We used a split top gate to create a p-n junction in the graphene, thereby making an effective thermocouple to read out the electronic temperature in the graphene. The electronic temperature is increased due to the AC currents induced in the graphene from the incoming radiation, which is first received by an antenna and then directed to the graphene via the top-gate capacitance. With the exception of the constant DC voltages applied to the gate, the detector does not need any bias and is therefore very simple to use. The measurements showed a clear response to microwaves at 94 GHz with the signal being almost temperature independent in the 4-100 K temperature range. The optical responsivity reached ˜700 V/W.
Microwave integrated circuit for Josephson voltage standards

NASA Technical Reports Server (NTRS)

Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

1980-01-01

A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.
High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1996-01-01

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.
Controllable Bidirectional dc Power Sources For Large Loads

NASA Technical Reports Server (NTRS)

Tripp, John S.; Daniels, Taumi S.

1995-01-01

System redesigned for greater efficiency, durability, and controllability. Modern electronically controlled dc power sources proposed to supply currents to six electromagnets used to position aerodynamic test model in wind tunnel. Six-phase bridge rectifier supplies load with large current at voltage of commanded magnitude and polarity. Current-feedback circuit includes current-limiting feature giving some protection against overload.
Analysis of transient state in HTS tapes under ripple DC load current

NASA Astrophysics Data System (ADS)

Stepien, M.; Grzesik, B.

2014-05-01

The paper concerns the analysis of transient state (quench transition) in HTS tapes loaded with the current having DC component together with a ripple component. Two shapes of the ripple were taken into account: sinusoidal and triangular. Very often HTS tape connected to a power electronic current supply (i.e. superconducting coil for SMES) that delivers DC current with ripples and it needs to be examined under such conditions. Additionally, measurements of electrical (and thermal) parameters under such ripple excitation is useful to tape characterization in broad range of load currents. The results presented in the paper were obtained using test bench which contains programmable DC supply and National Instruments data acquisition system. Voltage drops and load currents were measured vs. time. Analysis of measured parameters as a function of the current was used to tape description with quench dynamics taken into account. Results of measurements were also used to comparison with the results of numerical modelling based on FEM. Presented provisional results show possibility to use results of measurements in transient state to prepare inverse models of superconductors and their detailed numerical modelling.
Active terahertz metamaterials based on liquid-crystal induced transparency and absorption

NASA Astrophysics Data System (ADS)

Yang, Lei; Fan, Fei; Chen, Meng; Zhang, Xuanzhou; Chang, Sheng-Jiang

2017-01-01

An active terahertz (THz) liquid crystal (LC) metamaterial has been experimentally investigated for THz wave modulation. Some interesting phenomena of resonance shifting, tunable electromagnetically induced transparency (EIT) and electromagnetically induced absorption (EIA) have been observed in the same device structure under different DC bias directions and different incident wave polarization directions by the THz time domain spectroscopy. Further theoretical studies indicate that these effects originate from interference and coupling between bright and dark mode components of elliptically polarized modes in the LC metamaterial, which are induced by the optical activity of LC alignment controllable by the electric field as well as the changes of LC refractive index. The LC layer is indeed a phase retarder and polarization converter that is controlled by the DC bias. The THz modulation depth of the analogs of EIT and EIA effects are 18.3 dB and 10.5 dB in their frequency band, respectively. Electrical control, large modulation depth and feasible integration of this LC device make it an ideal candidate for THz tunable filter, intensity modulator and spatial light modulator.
A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

NASA Astrophysics Data System (ADS)

Kobayashi, T.; Maeda, R.; Itoh, T.

2008-11-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 Vpp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 107 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method.
A molecular dynamics simulation study on trapping ions in a nanoscale Paul trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xiongce; Krstic, Predrag S

2008-01-01

We found by molecular dynamics simulations that a low energy ion can be trapped effectively in a nanoscale Paul trap in both vacuum and in aqueous environment when appropriate AC/DC electric fields are applied to the system. Using the negatively charged chlorine ion as an example, we show that the trapped ion oscillates around the center of the nanotrap with the amplitude dependent on the parameters of the system and applied voltage. Successful trapping of the ion within nanoseconds requires electric bias of GHz frequency, in the range of hundreds of mV. The oscillations are damped in the aqueous environment,more » but polarization of the water molecules requires application of the higher voltage biases to reach the improved stability of the trapping. Application of a supplemental DC driving field along the trap axis can effectively drive the ion off the trap center and out of the trap, opening a possibility of studying DNA and other biological molecules using embedded probes while achieving a full control of their translocation and localization in the trap.« less
A simplified filterless photonic frequency octupling scheme based on cascaded modulators

NASA Astrophysics Data System (ADS)

Zhang, Wu; Wen, Aijun; Gao, Yongsheng; Zheng, Hanxiao; Chen, Wei; He, Hongye

2017-04-01

A simplified filterless frequency octupling scheme by connecting an intensity modulator (IM) with a dual-parallel Mach-Zehnder (DPMZM) in series is proposed in this paper. The LO signal is distributed into two parts, and one part is used to drive the IM and the other part is applied to drive the DPMZM's upper sub-modulator, both at the peak point. The lower sub-modulator is only driven by dc bias, and the parent modulator works at null point. By properly adjusting dc bias of the lower sub-modulator, only ±4th-order optical sidebands dominate at the output of the DPMZM. The approach is verified by experiments, and 32-GHz and 40-GHz millimetre waves (mm-waves) are generated using 4-GHz and 5-GHz LO signals, respectively. We acquire a 15-dB electrical spurious suppression ratio (ESSR) and a relatively good phase noise of the signal. Compared with other schemes, the scheme is simple in configuration because only an IM and a DPMZM are needed. What's more, the scheme is tunable in frequency as no filter is used.
Small, efficient power supply for xenon lamps

NASA Technical Reports Server (NTRS)

Goodwin, J. E.

1970-01-01

Device, which operates from 28 V dc, has four sections, a preregulator, a dc-to-dc converter, a current regulator, and a high voltage starter. The unique characteristics of the individual sections are described.
Fuzzy logic, PSO based fuzzy logic algorithm and current controls comparative for grid-connected hybrid system

NASA Astrophysics Data System (ADS)

Borni, A.; Abdelkrim, T.; Zaghba, L.; Bouchakour, A.; Lakhdari, A.; Zarour, L.

2017-02-01

In this paper the model of a grid connected hybrid system is presented. The hybrid system includes a variable speed wind turbine controlled by aFuzzy MPPT control, and a photovoltaic generator controlled with PSO Fuzzy MPPT control to compensate the power fluctuations caused by the wind in a short and long term, the inverter currents injected to the grid is controlled by a decoupled PI current control. In the first phase, we start by modeling of the conversion system components; the wind system is consisted of a turbine coupled to a gearless permanent magnet generator (PMG), the AC/DC and DC-DC (Boost) converter are responsible to feed the electric energy produced by the PMG to the DC-link. The solar system consists of a photovoltaic generator (GPV) connected to a DC/DC boost converter controlled by a PSO fuzzy MPPT control to extract at any moment the maximum available power at the GPV terminals, the system is based on maximum utilization of both of sources because of their complementary. At the end. The active power reached to the DC-link is injected to the grid through a DC/AC inverter, this function is achieved by controlling the DC bus voltage to keep it constant and close to its reference value, The simulation studies have been performed using Matlab/Simulink. It can be concluded that a good control system performance can be achieved.

The role and mechanics of dendritic cells in tumor antigen acquisition and presentation following laser immunotherapy

NASA Astrophysics Data System (ADS)

Laverty, Sean M.; Dawkins, Bryan A.; Chen, Wei R.

2018-02-01

We extend our model of the antitumor immune response initiated by laser-immunotherapy treatment to more closely examine key steps in the immune response 1) tumor antigen acquisition by antigen-presenting dendritic cells (DCs) and 2) cytotoxic T cell (CTL) priming by lymphatic DCs. Specifically we explore the formation of DC-CTL complexes that lead to CTL priming. We find that the bias in the dissociation rate of the complex influences the outcome of treatment. In particular, a bias towards priming favors a rapid activated CTL response and the clearance of tumors.
Near-zero IR transmission of VO2 thin films deposited on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Chunzi; Koughia, Cyril; Li, Yuanshi; Cui, Xiaoyu; Ye, Fan; Shiri, Sheida; Sanayei, Mohsen; Wen, Shi-Jie; Yang, Qiaoqin; Kasap, Safa

2018-05-01

Vanadium dioxide (VO2) thin films of different thickness have been deposited on Si substrates by using DC magnetron sputtering. The effects of substrate pre-treatment by means of seeding (spin coating and ultrasonic bathing) and biasing on the structure and optical properties were investigated. Seeding results in a smaller grain size in the oxide film, whereas biasing results in square-textured crystals. VO2 thin films of 150 nm thick show a near-zero IR transmission in switched state. Especially, the 150 nm thick VO2 thin film with seeding treatment shows an enhanced switching efficiency.
The decolouration of methyl orange using aluminum foam, ultrasound and direct electric current

NASA Astrophysics Data System (ADS)

Liu, C. M.; Huang, X. Y.; Zhang, H. Y.; Dai, J. D.; Ning, C. C.

2018-01-01

The decolouration of methyl orange (MO) using aluminum (Al) foam, ultrasound and direct electric current (DC) is investigated. The decolouration rate (DR) of MO using only Al foam is low because there is a passivation oxide layer on the Al foam surface. Due to the low utilization of ultrasound in MO water solution medium, the DR of MO using only ultrasonic irradiation is also poor. The DR of MO is greatly increased when Al foam, ultrasonic irradiation and DC are used together. There is good synergistic effect between Al foam, ultrasound and DC in decolouration of MO. This enhancement of DR may be related to the cavitation, cleaning of Al foam surface and water electrolysis. Due to the surface charge on wire carrying stationary current, Al foam with DC acts like a serious anodes and cathodes and makes water electrolysis giving hydrogen gas to cleavage azo bond. The DC applied on Al foam is beneficial for reductive decolouration of MO. Our results show that DC is a new way for the reductive decolouration MO in water.
Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

NASA Astrophysics Data System (ADS)

Lachab, M.; Sultana, M.; Fatima, H.; Adivarahan, V.; Fareed, Q.; Khan, M. A.

2012-12-01

This work reports on the dc performance of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) grown on Si (1 1 1) substrate and the study of current dispersion in these devices using various widely adopted methods. The MOSHEMTs were fabricated using a very thin (4.2 nm) SiO2 film as the gate insulator and were subsequently passivated with about 30 nm thick Si3N4 layer. For devices with 2.5 µm long gates and a 4 µm drain-to-source spacing, the maximum saturation drain current density was 822 mA mm-1 at + 4 V gate bias and the peak external transconductance was ˜100 mS mm-1. Furthermore, the oxide layer successfully suppressed the drain and gate leakage currents with the subthreshold current and the gate diode current levels exceeding by more than three orders of magnitude the levels found in their Schottky gate counterparts. Capacitance-voltage and dynamic current-voltage measurements were carried out to assess the oxide quality as well as the devices’ surface properties after passivation. The efficacy of each of these characterization techniques to probe the presence of interface traps and oxide charge in the nitride-based transistors is also discussed.
Improved DC Gun and Insulator Assembly

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neubauer, Michael

Many user facilities such as synchrotron radiation light sources and free electron lasers rely on DC high voltage photoguns with internal field gradients as high as 10 to 15 MV/m. These high gradients often lead to field emission which poses serious problems for the photocathode used to generate the electron beam and the ceramic insulators used to bias the photocathode at high voltage. Ceramic insulators are difficult to manufacture, require long commissioning times, and have poor reliability, in part because energetic electrons bury themselves in the ceramic causing a buildup of charge and eventual puncture, and also because large diametermore » ceramics are difficult to braze reliably. The lifetimes of photo cathodes inside high current DC guns exhibiting field emission are limited to less than a hundred hours. Reducing the surface gradients on the metals reduces the field emission, which serves to maintain the required ultrahigh vacuum condition. A novel gun design with gradients around 5 MV/m and operating at 350 kV, a major improvement over existing designs, was proposed that allows for the in-situ replacement of photo cathodes in axially symmetric designs using inverted ceramics. In this project, the existing JLAB CEBAF asymmetric gun design with an inverted ceramic support was modeled and the beam dynamics characterized. An improved structure was designed that reduces the surface gradients and improves the beam optics. To minimize the surface gradients, a number of electrostatic gun designs were studied to determine the optimum configuration of the critical electrodes within the gun structure. Coating experiments were carried out to create a charge dissipative coating for cylindrical ceramics. The phase II proposal, which was not granted, included the design and fabrication of an axially symmetric DC Gun with an inverted ceramic that would operate with less than 5 MV/m at 350 kV and would be designed with an in-situ replaceable photo-cathode.« less
Method for exciting inductive-resistive loads with high and controllable direct current

DOEpatents

Hill, Jr., Homer M.

1976-01-01

Apparatus and method for transmitting dc power to a load circuit by applying a dc voltage from a standard waveform synthesizer to duration modulate a bipolar rectangular wave generator. As the amplitude of the dc voltage increases, the widths of the rectangular wave generator output pulses increase, and as the amplitude of the dc voltage decreases, the widths of the rectangular wave generator output pulses decrease. Thus, the waveform synthesizer selectively changes the durations of the rectangular wave generator bipolar output pulses so as to produce a rectangular wave ac carrier that is duration modulated in accordance with and in direct proportion to the voltage amplitude from the synthesizer. Thereupon, by transferring the carrier to the load circuit through an amplifier and a rectifier, the load current also corresponds directly to the voltage amplitude from the synthesizer. To this end, the rectified wave at less than 100% duty factor, amounts to a doubled frequency direct voltage pulse train for applying a direct current to the load, while the current ripple is minimized by a high L/R in the load circuit. In one embodiment, a power transmitting power amplifier means having a dc power supply is matched to the load circuit through a transformer for current magnification without sacrificing load current duration capability, while negative voltage and current feedback are provided in order to insure good output fidelity.
High temperature current mirror amplifier

DOEpatents

Patterson, III, Raymond B.

1984-05-22

A high temperature current mirror amplifier having biasing means in the transdiode connection of the input transistor for producing a voltage to maintain the base-collector junction reversed-biased and a current means for maintaining a current through the biasing means at high temperatures so that the base-collector junction of the input transistor remained reversed-biased. For accuracy, a second current mirror is provided with a biasing means and current means on the input leg.
LOW-LEVEL DIRECT CURRENT AMPLIFIER

DOEpatents

Kerns, Q.A.

1959-05-01

A d-c amplifier is described. Modulation is provided between a d-c signal and an alternating current to give an output signal proportional to the d- c signal. The circuit has high sensitivity and accuracy. (T.R.H.)
Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

PubMed Central

Obrosov, Aleksei; Gulyaev, Roman; Zak, Andrzej; Ratzke, Markus; Naveed, Muhammad; Dudzinski, Wlodzimierz; Weiß, Sabine

2017-01-01

MAX phases (M = transition metal, A = A-group element, and X = C/N) are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100) and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), and nanoindentation. Transmission Electron Microscopy (TEM) was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm) and granular size (76 nm) combined with the highest hardness (15.9 GPa). The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films. PMID:28772516
An experimental study of phase transitions in a complex plasma

NASA Astrophysics Data System (ADS)

Smith, Bernard Albert Thomas, II

In semiconductor manufacturing, contamination due to particulates significantly decreases the yield and quality of device fabrication, therefore increasing the cost of production. Dust particle clouds can be found in almost all plasma processing environments including both plasma etching devices and in plasma deposition processes. Dust particles suspended within such plasmas will acquire an electric charge from collisions with free electrons in the plasma. If the ratio of inter-particle potential energy to the average kinetic energy is sufficient, the particles will form either a "liquid" structure with short range ordering or a crystalline structure with long range ordering. Otherwise, the dust particle system will remain in a gaseous state. Many experiments have been conducted over the past decade on such complex plasmas to discover the character of the systems formed, but more work is needed to fully understand these structures. This paper describes the processes involved in setting up the CASPER GEC RF Reference Cell and the modifications necessary to examine complex plasmas. Research conducted to characterize the system is outlined to demonstrate that the CASPER Cell behaves as other GEC Cells. In addition, further research performed shows the behavior of the complex plasma system in the CASPER Cell is similar to complex plasmas studied by other groups in this field. Along the way analysis routines developed specifically for this system are described. New research involving polydisperse dust distributions is carried out in the system once the initial characterization is finished. Next, a system to externally vary the DC bias in the CASPER Cell is developed and characterized. Finally, new research conducted to specifically examine how the complex plasma system reacts to a variable DC bias is reported. Specifically, the response of the interparticle spacing to various system parameters (including the external DC bias) is examined. Also, a previously unreported phenomenon, namely layer splitting, is examined.
Performance of a 14.9-kW laminated-frame dc series motor with chopper controller

NASA Technical Reports Server (NTRS)

Schwab, J. R.

1979-01-01

Traction motor using two types of excitation: ripple free dc from a motor generator set for baseline data and chopped dc as supplied by a battery and chopper controller was tested. For the same average values of input voltage and current, the power output was independent of the type of excitation. At the same speeds, motor efficiency at low power output (corresponding to low duty cycle of the controller) was 5 to 10 percentage points less on chopped dc than on ripple-free dc. This illustrates that for chopped waveforms, it is incorrect to calculate input power as the product of average voltage and average current. Locked-rotor torque, no load losses, and magnetic saturation data were so determined.
A Comparison of Alternating Current and Direct Current Electrospray Ionization for Mass Spectrometry

PubMed Central

Sarver, Scott A.; Gartner, Carlos A.; Chetwani, Nishant; Go, David B.; Dovichi, Norman J.

2014-01-01

A series of studies comparing the performance of alternating current electrospray ionization (AC ESI) mass spectrometry (MS) and direct current electrospray ionization (DC ESI) MS has been conducted, exploring the absolute signal intensity and signal-to-background ratios produced by both methods using caffeine and a model peptide as targets. Because the high-voltage AC signal was more susceptible to generating gas discharges, the operating voltage range of AC ESI was significantly smaller than that for DC ESI, such that the absolute signal intensities produced by DC ESI at peak voltages were 1 - 2 orders of magnitude greater than those for AC ESI. Using an electronegative nebulizing gas, sulfur hexafluoride (SF6), instead of nitrogen (N2) increased the operating range of AC ESI by ~50%, but did not appreciably improve signal intensities. While DC ESI generated far greater signal intensities, both ionization methods produced comparable signal-to-background noise, with AC ESI spectra appearing qualitatively cleaner. A quantitative calibration analysis was performed for two analytes, caffeine and the peptide MRFA. AC ESI utilizing SF6 outperforms all other techniques for the detection of MRFA, producing chromatographic limits of detection nearly one order of magnitude lower than that of DC ESI utilizing N2, and one half that of DC ESI utilizing SF6. However, DC ESI outperforms AC ESI for the analysis of caffeine, indicating improvements in spectral quality may benefit certain compounds, or classes of compounds, on an individual basis. PMID:24464359
The BepiColombo Laser Altimeter (BeLA) power converter module (PCM): Concept and characterisation.

PubMed

Rodrigo, J; Gasquet, E; Castro, J-M; Herranz, M; Lara, L-M; Muñoz, M; Simon, A; Behnke, T; Thomas, N

2017-03-01

This paper presents the principal considerations when designing DC-DC converters for space instruments, in particular for the power converter module as part of the first European space laser altimeter: "BepiColombo Laser Altimeter" on board the European Space Agency-Japan Aerospace Exploration Agency (JAXA) mission BepiColombo. The main factors which determine the design of the DC-DC modules in space applications are printed circuit board occupation, mass, DC-DC converter efficiency, and environmental-survivability constraints. Topics included in the appropriated DC-DC converter design flow are hereby described. The topology and technology for the primary and secondary stages, input filters, transformer design, and peripheral components are discussed. Component selection and design trade-offs are described. Grounding, load and line regulation, and secondary protection circuitry (under-voltage, over-voltage, and over-current) are then introduced. Lastly, test results and characterization of the final flight design are also presented. Testing of the inrush current, the regulated output start-up, and the switching function of the power supply indicate that these performances are fully compliant with the requirements.
A simulation-based efficiency comparison of AC and DC power distribution networks in commercial buildings

DOE PAGES

Gerber, Daniel L.; Vossos, Vagelis; Feng, Wei; ...

2017-06-12

Direct current (DC) power distribution has recently gained traction in buildings research due to the proliferation of on-site electricity generation and battery storage, and an increasing prevalence of internal DC loads. The research discussed in this paper uses Modelica-based simulation to compare the efficiency of DC building power distribution with an equivalent alternating current (AC) distribution. The buildings are all modeled with solar generation, battery storage, and loads that are representative of the most efficient building technology. A variety of paramet ric simulations determine how and when DC distribution proves advantageous. These simulations also validate previous studies that use simplermore » approaches and arithmetic efficiency models. This work shows that using DC distribution can be considerably more efficient: a medium sized office building using DC distribution has an expected baseline of 12% savings, but may also save up to 18%. In these results, the baseline simulation parameters are for a zero net energy (ZNE) building that can island as a microgrid. DC is most advantageous in buildings with large solar capacity, large battery capacity, and high voltage distribution.« less
A simulation-based efficiency comparison of AC and DC power distribution networks in commercial buildings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gerber, Daniel L.; Vossos, Vagelis; Feng, Wei

Direct current (DC) power distribution has recently gained traction in buildings research due to the proliferation of on-site electricity generation and battery storage, and an increasing prevalence of internal DC loads. The research discussed in this paper uses Modelica-based simulation to compare the efficiency of DC building power distribution with an equivalent alternating current (AC) distribution. The buildings are all modeled with solar generation, battery storage, and loads that are representative of the most efficient building technology. A variety of paramet ric simulations determine how and when DC distribution proves advantageous. These simulations also validate previous studies that use simplermore » approaches and arithmetic efficiency models. This work shows that using DC distribution can be considerably more efficient: a medium sized office building using DC distribution has an expected baseline of 12% savings, but may also save up to 18%. In these results, the baseline simulation parameters are for a zero net energy (ZNE) building that can island as a microgrid. DC is most advantageous in buildings with large solar capacity, large battery capacity, and high voltage distribution.« less
An Optimal Control Strategy for DC Bus Voltage Regulation in Photovoltaic System with Battery Energy Storage

PubMed Central

Daud, Muhamad Zalani; Mohamed, Azah; Hannan, M. A.

2014-01-01

This paper presents an evaluation of an optimal DC bus voltage regulation strategy for grid-connected photovoltaic (PV) system with battery energy storage (BES). The BES is connected to the PV system DC bus using a DC/DC buck-boost converter. The converter facilitates the BES power charge/discharge to compensate for the DC bus voltage deviation during severe disturbance conditions. In this way, the regulation of DC bus voltage of the PV/BES system can be enhanced as compared to the conventional regulation that is solely based on the voltage-sourced converter (VSC). For the grid side VSC (G-VSC), two control methods, namely, the voltage-mode and current-mode controls, are applied. For control parameter optimization, the simplex optimization technique is applied for the G-VSC voltage- and current-mode controls, including the BES DC/DC buck-boost converter controllers. A new set of optimized parameters are obtained for each of the power converters for comparison purposes. The PSCAD/EMTDC-based simulation case studies are presented to evaluate the performance of the proposed optimized control scheme in comparison to the conventional methods. PMID:24883374
An optimal control strategy for DC bus voltage regulation in photovoltaic system with battery energy storage.

PubMed

Daud, Muhamad Zalani; Mohamed, Azah; Hannan, M A

2014-01-01

This paper presents an evaluation of an optimal DC bus voltage regulation strategy for grid-connected photovoltaic (PV) system with battery energy storage (BES). The BES is connected to the PV system DC bus using a DC/DC buck-boost converter. The converter facilitates the BES power charge/discharge to compensate for the DC bus voltage deviation during severe disturbance conditions. In this way, the regulation of DC bus voltage of the PV/BES system can be enhanced as compared to the conventional regulation that is solely based on the voltage-sourced converter (VSC). For the grid side VSC (G-VSC), two control methods, namely, the voltage-mode and current-mode controls, are applied. For control parameter optimization, the simplex optimization technique is applied for the G-VSC voltage- and current-mode controls, including the BES DC/DC buck-boost converter controllers. A new set of optimized parameters are obtained for each of the power converters for comparison purposes. The PSCAD/EMTDC-based simulation case studies are presented to evaluate the performance of the proposed optimized control scheme in comparison to the conventional methods.
Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures

NASA Astrophysics Data System (ADS)

Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Bondarev, I. A.; Varnakov, S. N.; Ovchinnikov, S. G.

2018-04-01

Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.
High temperature current mirror amplifier

DOEpatents

Patterson, R.B. III.

1984-05-22

Disclosed is a high temperature current mirror amplifier having biasing means in the transdiode connection of the input transistor for producing a voltage to maintain the base-collector junction reversed-biased and a current means for maintaining a current through the biasing means at high temperatures so that the base-collector junction of the input transistor remained reversed-biased. For accuracy, a second current mirror is provided with a biasing means and current means on the input leg. 2 figs.
Microwave Switching and Attenuation with Superconductors.

NASA Astrophysics Data System (ADS)

Poulin, Grant Darcy

1995-01-01

The discovery of high temperature superconducting (HTS) materials having a critical temperature above the boiling point of liquid nitrogen has generated a large amount of interest in both the basic and applied scientific communities. Considerable research effort has been expended in developing HTS microwave devices, since thin film, passive, microwave components will likely be the first area to be successfully commercialized. This thesis describes a new thin film HTS microwave device that can be operated as a switch or as a continuously variable attenuator. It is well suited for low power analog signal control applications and can easily be integrated with other HTS devices. Due to its small size and mass, the device is expected to find application as a receiver protection switch or as an automatic gain control element, both used in satellite communications receivers. The device has a very low insertion loss, and the isolation in the OFF state is continuously variable to 25 dB. With minor modifications, an isolation exceeding 50 dB is readily achievable. A patent application for the device has been filed, with the patent rights assigned to COM DEV. The device is based on an unusual non-linear response in HTS materials. Under a non-zero DC voltage bias, the current through a superconducting bridge is essentially voltage independent. We have proposed a thermal instability to account for this behaviour. Thermal modelling in conjunction with direct temperature measurements were used to confirm the validity of the model. We have developed a detailed model explaining the microwave response of the device. The model accurately predicts the microwave attenuation as a function of the applied DC control voltage and fully explains the device operation. A key feature is that the device acts as a pure resistive element at microwave frequencies, with no reactance. The resistance is continuously variable, controlled by the DC bias voltage. This distinguishes it from a PIN diode, since PIN diodes have a capacitive reactance that limits their frequency range. Measurements made to confirm the microwave model validity resulted in the development of a new cryogenic de-embedding technique. The technique allows accurate microwave measurements to be made on devices at cryogenic temperatures using only room temperature calibration standards. We have also investigated the effect of kinetic inductance on coplanar waveguide transmission lines, and indicate under what conditions kinetic inductance must be considered in transmission line design.

Analysis of payload bay magnetic fields due to dc power multipoint and single point ground configurations

NASA Technical Reports Server (NTRS)

Lawton, R. M.

1976-01-01

An analysis of magnetic fields in the Orbiter Payload Bay resulting from the present grounding configuration (structure return) was presented and the amount of improvement that would result from installing wire returns for the three dc power buses was determined. Ac and dc magnetic fields at five points in a cross-section of the bay are calculated for both grounding configurations. Y and Z components of the field at each point are derived in terms of a constant coefficient and the current amplitude of each bus. The dc loads assumed are 100 Amperes for each bus. The ac noise current used is a spectrum 6 db higher than the Orbiter equipment limit for narrowband conducted emissions. It was concluded that installing return wiring to provide a single point ground for the dc Buses in the Payload Bay would reduce the ac and dc magnetic field intensity by approximately 30 db.
R Dump Converter without DC Link Capacitor for an 8/6 SRM: Experimental Investigation

PubMed Central

Kavitha, Pasumalaithevan; Umamaheswari, Bhaskaran

2015-01-01

The objective of this paper is to investigate the performance of 8/6 switched reluctance motor (SRM) when excited with sinusoidal voltage. The conventional R dump converter provides DC excitation with the help of capacitor. In this paper the converter used is the modified R dump converter without DC link capacitor providing AC or sinusoidal excitation. Torque ripple and speed ripple are investigated based on hysteresis current control. Constant and sinusoidal current references are considered for comparison in both DC and AC excitation. Extensive theoretical and experimental investigations are made to bring out the merits and demerits of AC versus DC excitation. It is shown that the constructionally simple SRM can be favorably controlled with simple R dump converter with direct AC excitation without need for DC link capacitor. A 4-phase 8/6 0.5 kW SRM is used for experimentation. PMID:25642452
R dump converter without DC link capacitor for an 8/6 SRM: experimental investigation.

PubMed

Kavitha, Pasumalaithevan; Umamaheswari, Bhaskaran

2015-01-01

The objective of this paper is to investigate the performance of 8/6 switched reluctance motor (SRM) when excited with sinusoidal voltage. The conventional R dump converter provides DC excitation with the help of capacitor. In this paper the converter used is the modified R dump converter without DC link capacitor providing AC or sinusoidal excitation. Torque ripple and speed ripple are investigated based on hysteresis current control. Constant and sinusoidal current references are considered for comparison in both DC and AC excitation. Extensive theoretical and experimental investigations are made to bring out the merits and demerits of AC versus DC excitation. It is shown that the constructionally simple SRM can be favorably controlled with simple R dump converter with direct AC excitation without need for DC link capacitor. A 4-phase 8/6 0.5 kW SRM is used for experimentation.
The negative hydrogen Penning ion gauge ion source for KIRAMS-13 cyclotron

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, D. H.; Jung, I. S.; Kang, J.

2008-02-15

The cold-cathode-type Penning ion gauge (PIG) ion source for the internal ion source of KIRAMS-13 cyclotron has been used for generation of negative hydrogen ions. The dc H-beam current of 650 {mu}A from the PIG ion source with the Dee voltage of 40 kV and arc current of 1.0 A is extrapolated from the measured dc extraction beam currents at the low extraction dc voltages. The output optimization of PIG ion source in the cyclotron has been carried out by using various chimneys with different sizes of the expansion gap between the plasma boundary and the chimney wall. This papermore » presents the results of the dc H-extraction measurement and the expansion gap experiment.« less
Abrikosov fluxonics in washboard nanolandscapes

NASA Astrophysics Data System (ADS)

Dobrovolskiy, Oleksandr V.

2017-02-01

Abrikosov fluxonics, a domain of science and engineering at the interface of superconductivity research and nanotechnology, is concerned with the study of the properties and dynamics of Abrikosov vortices in nanopatterned superconductors, with particular focus on their confinement, manipulation, and exploitation for emerging functionalities. Vortex pinning, guided vortex motion, and the ratchet effect are three main fluxonic ;tools; which allow for the dynamical (pinned or moving), the directional (angle-dependent), and the orientational (current polarity-sensitive) control of the fluxons, respectively. Thanks to the periodicity of the vortex lattice, several groups of effects emerge when the vortices move in a periodic pinning landscape: Spatial commensurability of the location of vortices with the underlying pinning nanolandscape leads to a reduction of the dc resistance and the microwave loss at the so-called matching fields. Temporal synchronization of the displacement of vortices with the number of pinning sites visited during one half ac cycle manifests itself as Shapiro steps in the current-voltage curves. Delocalization of vortices oscillating under the action of a high-frequency ac drive can be tuned by a superimposed dc bias. In this short review a set of experimental results on the vortex dynamics in the presence of periodic pinning potentials in Nb thin films is presented. The consideration is limited to one particular type of artificial pinning structures - directly written nanolandscapes of the washboard type, which are fabricated by focused ion beam milling and focused electron beam induced deposition. The reported results are relevant for the development of fluxonic devices and the reduction of microwave losses in superconducting planar transmission lines.
Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

PubMed

Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

2015-10-01

In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.
Performance evaluation of an architecture for the characterisation of photo-devices: design, fabrication and test on a CMOS technology

NASA Astrophysics Data System (ADS)

Castillo-Cabrera, G.; García-Lamont, J.; Reyes-Barranca, M. A.; Moreno-Cadenas, J. A.; Escobosa-Echavarría, A.

2011-03-01

In this report, the performance of a particular pixel's architecture is evaluated. It consists mainly of an optical sensor coupled to an amplifier. The circuit contains photoreceptors such as phototransistors and photodiodes. The circuit integrates two main blocks: (a) the pixel architecture, containing four p-channel transistors and a photoreceptor, and (b) a current source for biasing the signal conditioning amplifier. The generated photocurrent is integrated through the gate capacitance of the input p-channel MOS transistor, then converted to voltage and amplified. Both input transistor and current source are implemented as a voltage amplifier having variable gain (between 10dB and 32dB). Considering characterisation purposes, this last fact is relevant since it gives a degree of freedom to the measurement of different kinds of photo-devices and is not limited to either a single operating point of the circuit or one kind and size of photo-sensor. The gain of the amplifier can be adjusted with an external DC power supply that also sets the DC quiescent point of the circuit. Design of the row-select transistor's aspect ratio used in the matrix array is critical for the pixel's amplifier performance. Based on circuit design data such as capacitance magnitude, time and voltage integration, and amplifier gain, characterisation of all the architecture can be readily carried out and evaluated. For the specific technology used in this work, the spectral response of photo-sensors reveals performance differences between phototransistors and photodiodes. Good approximation between simulation and measurement was obtained.
Analysis, Simulation, and Fabrication of Current Mode Controlled DC-DC Power Converters

DTIC Science & Technology

1999-12-01

susceptibility), vou/ vin . 3 . The output impedance including the load. 22 The crossover frequency, coc, appears in all poles and is defined as: oo... VIN - 3 0 VIN - 3 V Delay to Outputs (TJ=25*C, (Note 2) 200 500 200 500 ns ( Current Limit Adjust Section Current Limit Offset
Bidirectional dc-to-dc Power Converter

NASA Technical Reports Server (NTRS)

Griesbach, C. R.

1986-01-01

Solid-state, series-resonant converter uses high-voltage thyristors. Converter used either to convert high-voltage, low-current dc power to lowvoltage, high current power or reverse. Taking advantage of newly-available high-voltage thyristors to provide better reliability and efficiency than traditional converters that use vacuum tubes as power switches. New converter essentially maintenance free and provides greatly increased mean time between failures. Attractive in industrial applications whether or not bidirectional capability is required.
Load flows and faults considering dc current injections

NASA Technical Reports Server (NTRS)

Kusic, G. L.; Beach, R. F.

1991-01-01

The authors present novel methods for incorporating current injection sources into dc power flow computations and determining network fault currents when electronic devices limit fault currents. Combinations of current and voltage sources into a single network are considered in a general formulation. An example of relay coordination is presented. The present study is pertinent to the development of the Space Station Freedom electrical generation, transmission, and distribution system.
Optimization of direct current-enhanced radiofrequency ablation: an ex vivo study.

PubMed

Tanaka, Toshihiro; Isfort, Peter; Bruners, Philipp; Penzkofer, Tobias; Kichikawa, Kimihiko; Schmitz-Rode, Thomas; Mahnken, Andreas H

2010-10-01

The purpose of this study was to investigate the optimal setting for radiofrequency (RF) ablation combined with direct electrical current (DC) ablation in ex vivo bovine liver. An electrical circuit combining a commercially available RF ablation system with DC was developed. The negative electrode of a rectifier that provides DC was connected to a 3-cm multitined expandable RF probe. A 100-mH inductor was used to prevent electrical leakage from the RF generator. DC was applied for 15 min and followed by RF ablation in freshly excised bovine livers. Electric current was measured by an ammeter. Coagulation volume, ablation duration, and mean amperage were assessed for various DC voltages (no DC, 2.2, 4.5, and 9.0 V) and different RF ablation protocols (stepwise increase from 40 to 80 W, 40 W fixed, and 80 W fixed). Results were compared using Kruskal-Wallis and Mann-Whitney U test. Applying DC with 4.5 or 9.0 V, in combination with 40 W fixed or a stepwise increase of RF energy, resulted in significantly increased zone of ablation size compared with 2.2 V or no DC (P = 0.009). At 4.5 V DC, the stepwise increase of RF energy resulted in the same necrosis size as a 40 W fixed protocol (26.6 +/- 3.9 vs. 26.5 +/- 4.0 ml), but ablation duration was significantly decreased (296 +/- 85 s vs. 423 +/- 104 s; P = 0.028). Mean amperage was significantly lower at 4.5 V compared with 9.0 V (P = 0.028). Combining a stepwise increase of RF energy with a DC voltage of 4.5 V is most appropriate to increase coagulation volume and to minimize procedure time.
Optimization of Direct Current-Enhanced Radiofrequency Ablation: An Ex Vivo Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Toshihiro, E-mail: toshihir@bf6.so-net.ne.jp; Isfort, Peter; Bruners, Philipp

2010-10-15

The purpose of this study was to investigate the optimal setting for radiofrequency (RF) ablation combined with direct electrical current (DC) ablation in ex vivo bovine liver. An electrical circuit combining a commercially available RF ablation system with DC was developed. The negative electrode of a rectifier that provides DC was connected to a 3-cm multitined expandable RF probe. A 100-mH inductor was used to prevent electrical leakage from the RF generator. DC was applied for 15 min and followed by RF ablation in freshly excised bovine livers. Electric current was measured by an ammeter. Coagulation volume, ablation duration, andmore » mean amperage were assessed for various DC voltages (no DC, 2.2, 4.5, and 9.0 V) and different RF ablation protocols (stepwise increase from 40 to 80 W, 40 W fixed, and 80 W fixed). Results were compared using Kruskal-Wallis and Mann-Whitney U test. Applying DC with 4.5 or 9.0 V, in combination with 40 W fixed or a stepwise increase of RF energy, resulted in significantly increased zone of ablation size compared with 2.2 V or no DC (P = 0.009). At 4.5 V DC, the stepwise increase of RF energy resulted in the same necrosis size as a 40 W fixed protocol (26.6 {+-} 3.9 vs. 26.5 {+-} 4.0 ml), but ablation duration was significantly decreased (296 {+-} 85 s vs. 423 {+-} 104 s; P = 0.028). Mean amperage was significantly lower at 4.5 V compared with 9.0 V (P = 0.028). Combining a stepwise increase of RF energy with a DC voltage of 4.5 V is most appropriate to increase coagulation volume and to minimize procedure time.« less
Dielectric barrier discharge plasma actuator for flow control

NASA Astrophysics Data System (ADS)

Opaits, Dmitry Florievich

Electrohydrodynamic (EHD) and magnetohydrodynamic phenomena are being widely studied for aerodynamic applications. The major effects of these phenomena are heating of the gas, body force generation, and enthalpy addition or extraction, [1, 2, 3]. In particular, asymmetric dielectric barrier discharge (DBD) plasma actuators are known to be effective EHD device in aerodynamic control, [4, 5]. Experiments have demonstrated their effectiveness in separation control, acoustic noise reduction, and other aeronautic applications. In contrast to conventional DBD actuators driven by sinusoidal voltages, we proposed and used a voltage profile consisting of nanosecond pulses superimposed on dc bias voltage. This produces what is essentially a non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The advantage of this non-self-sustained discharge is that the parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. Experimental studies were conducted of a flow induced in a quiescent room air by a single DBD actuator. A new approach for non-intrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low voltages. In view of practical applications certain questions have been also addressed, such as electrodynamic effects which accompany scaling of the actuators to real size models, and environmental effects of ozone production by the plasma actuators.
RF generator interlock by plasma grid bias current - An alternate to Hα interlock

NASA Astrophysics Data System (ADS)

Bandyopadhyay, M.; Gahlaut, A.; Yadav, R. K.; Pandya, K.; Tyagi, H.; Vupugalla, M.; Bhuyan, M.; Bhagora, J.; Chakraborty, A.

2017-08-01

ROBIN is inductively coupled plasma (ICP) based negative hydrogen ion source, operated with a 100kW, 1MHz Tetrode based RF generator (RFG). Inductive plasma ignition by the RFG in ROBIN is associated with electron seeding by a hot filament and a gas puff. RFG is triggered by the control system to deliver power just at the peak pressure of the gas puff. Once plasma is ignited due to proper impedance matching, a bright light, dominated by Hα (˜656nm wavelength) radiation is available inside RF driver which is used as a feedback signal to the RFG to continue its operation. If impedance matching is not correct, plasma is not produced due to lack of power coupling and bright light is not available. During such condition, reflected RF power may damage the RFG. Therefore, to protect the RFG, it needs to be switched off automatically within 200ms by the control system in such cases. This plasma light based RFG interlock is adopted from BATMAN ion source. However, in case of vacuum immersed RF ion source in reactor grade NBI system, such plasma light based interlock may not be feasible due to lack of adequate optical fiber interfaces. In reactor grade NBI system, neutron and gamma radiations have impact on materials which may lead to frequent maintenance and machine down time. The present demonstration of RFG interlock by Bias Current (BC) in ROBIN testbed gives an alternate option in this regard. In ROBIN, a bias plate (BP) is placed in the plasma chamber near the plasma grid (PG). BP is electrically connected to the plasma chamber wall of the ion source and PG is isolated from the wall. A high current ˜85 A direct current (DC) power supply of voltage in the range of 0 - 33V is connected between the PG and the BP in such a way that PG can be biased positively with respect to the BP or plasma chamber. This arrangement is actually made to absorb electrons and correspondingly reduce co-extracted electron current during beam extraction. However, in case of normal plasma operation, BC rises due to the presence of plasma electrons, almost in the same timescale as plasma light detection system and so, BC signal can also be used as RFG interlock. The BC signal transmission is through optical isolation to reduce noise interference with the signal. The response of the current monitoring signal available from the PG power supply of ROBIN is quite slow (in the order of few tens of milliseconds). Therefore, a fast response current detection electronic circuit having the ability to generate a PG current detection pulse with adjustable threshold set point has been developed and integrated with ROBIN, and the above concept has been demonstrated in ROBIN recently. The present paper will discuss this experimental activity and its results.
Nonlinear transport behavior of low dimensional electron systems

NASA Astrophysics Data System (ADS)

Zhang, Jingqiao

The nonlinear behavior of low-dimensional electron systems attracts a great deal of attention for its fundamental interest as well as for potentially important applications in nanoelectronics. In response to microwave radiation and dc bias, strongly nonlinear electron transport that gives rise to unusual electron states has been reported in two-dimensional systems of electrons in high magnetic fields. There has also been great interest in the nonlinear response of quantum ballistic constrictions, where the effects of quantum interference, spatial dispersion and electron-electron interactions play crucial roles. In this thesis, experimental results of the research of low dimensional electron gas systems are presented. The first nonlinear phenomena were observed in samples of highly mobile two dimensional electrons in GaAs heavily doped quantum wells at different magnitudes of DC and AC (10 KHz to 20 GHz) excitations. We found that in the DC excitation regime the differential resistance oscillates with the DC current and external magnetic field, similar behavior was observed earlier in AlGaAs/GaAs heterostructures [C.L. Yang et al. ]. At external AC excitations the resistance is found to be also oscillating as a function of the magnetic field. However the form of the oscillations is considerably different from the DC case. We show that at frequencies below 100 KHz the difference is a result of a specific average of the DC differential resistance during the period of the external AC excitations. Secondly, in similar samples, strong suppression of the resistance by the electric field is observed in magnetic fields at which the Landau quantization of electron motion occurs. The phenomenon survives at high temperatures at which the Shubnikov de Haas oscillations are absent. The scale of the electric fields essential for the effect, is found to be proportional to temperature in the low temperature limit. We suggest that the strong reduction of the longitudinal resistance is a result of a nontrivial distribution function of the electrons induced by the DC electric field. We compare our results with a theory proposed recently. The comparison allows us to find the quantum scattering time of 2D electron gas at high temperatures, in a regime, where previous methods were not successful. In addition, we observed a zero differential resistance state (ZDRS) in response to a direct current above a threshold value I > Ith applied to a two-dimensional system of electrons at low temperatures in a strong magnetic field. Entry into the ZDRS, which is not observable above several Kelvins, is accompanied by a sharp dip in the differential resistance. Additional analysis reveals instability of the electrons for I > Ith and an inhomogeneous, non-stationary pattern of the electric current. We suggest that the dominant mechanism leading to the new electron state is the redistribution of electrons in energy space induced by the direct current. Finally, we present the results of rectification of microwave radiation generated by an asymmetric, ballistic dot at different frequencies (1-40GHz), temperatures (0.3K-6K) and magnetic fields. A strong reduction of the microwave rectification is found in magnetic fields at which the cyclotron radius of electron orbits at the Fermi level is smaller than the size of the dot. With respect to the magnetic field, both symmetric and anti-symmetric contributions to the directed transport are presented in this thesis. The symmetric part of the rectified voltage changes significantly with microwave frequency o at otauf ≥ 1, where tau f is the time of a ballistic electron flight across the dot. The results lead consistently toward the ballistic origin of the effect, and can be explained by the strong nonlocal electron response to the microwave electric field, which affects both the speed and the direction of the electron motion inside the dot.
Bidirectional DC/DC Converter

NASA Astrophysics Data System (ADS)

Pedersen, F.

2008-09-01

The presented bidirectional DC/DC converter design concept is a further development of an already existing converter used for low battery voltage operation.For low battery voltage operation a high efficient low parts count DC/DC converter was developed, and used in a satellite for the battery charge and battery discharge function.The converter consists in a bidirectional, non regulating DC/DC converter connected to a discharge regulating Buck converter and a charge regulating Buck converter.The Bidirectional non regulating DC/DC converter performs with relatively high efficiency even at relatively high currents, which here means up to 35Amps.This performance was obtained through the use of power MOSFET's with on- resistances of only a few mille Ohms connected to a special transformer allowing paralleling several transistor stages on the low voltage side of the transformer. The design is patent protected. Synchronous rectification leads to high efficiency at the low battery voltages considered, which was in the range 2,7- 4,3 Volt DC.The converter performs with low switching losses as zero voltage zero current switching is implemented in all switching positions of the converter.Now, the drive power needed, to switch a relatively large number of low Ohm , hence high drive capacitance, power MOSFET's using conventional drive techniques would limit the overall conversion efficiency.Therefore a resonant drive consuming considerable less power than a conventional drive circuit was implemented in the converter.To the originally built and patent protected bidirectional non regulating DC/DC converter, is added the functionality of regulation.Hereby the need for additional converter stages in form of a Charge Buck regulator and a Discharge Buck regulator is eliminated.The bidirectional DC/DC converter can be used in connection with batteries, motors, etc, where the bidirectional feature, simple design and high performance may be useful.
77 FR 31341 - Application To Export Electric Energy; DC Energy, LLC

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-25

... energy from the United States to Canada as a power marketer for a five-year term. The current export... DC Energy. The application also indicates that DC Energy is a power marketer authorized by the...
Pump-Probe Noise Spectroscopy of Molecular Junctions.

PubMed

Ochoa, Maicol A; Selzer, Yoram; Peskin, Uri; Galperin, Michael

2015-02-05

The slow response of electronic components in junctions limits the direct applicability of pump-probe type spectroscopy in assessing the intramolecular dynamics. Recently the possibility of getting information on a sub-picosecond time scale from dc current measurements was proposed. We revisit the idea of picosecond resolution by pump-probe spectroscopy from dc measurements and show that any intramolecular dynamics not directly related to charge transfer in the current direction is missed by current measurements. We propose a pump-probe dc shot noise spectroscopy as a suitable alternative. Numerical examples of time-dependent and average responses of junctions are presented for generic models.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yalong; Jones, Edward A.; Wang, Fred

Arm inductor in a modular multilevel converter (MMC) is used to limit the circulating current and dc short circuit fault current. The circulating current in MMC is dominated by second-order harmonic, which can be largely reduced with circulating current suppressing control. By analyzing the mechanism of the circulating current suppressing control, it is found that the circulating current at switching frequency becomes the main harmonic when suppression control is implemented. Unlike the second-order harmonic that circulates only within the three phases, switching frequency harmonic also flows through the dc side and may further cause high-frequency dc voltage harmonic. This articlemore » develops the theoretical relationship between the arm inductance and switching frequency circulating current, which can be used to guide the arm inductance selection. The experimental results with a downscaled MMC prototype verify the existence of the switching frequency circulating current and its relationship with arm inductance.« less
A complete dc characterization of a constant-frequency, clamped-mode, series-resonant converter

NASA Technical Reports Server (NTRS)

Tsai, Fu-Sheng; Lee, Fred C.

1988-01-01

The dc behavior of a clamped-mode series-resonant converter is characterized systematically. Given a circuit operating condition, the converter's mode of operation is determined and various circuit parameters are calculated, such as average inductor current (load current), rms inductor current, peak capacitor voltage, rms switch currents, average diode currents, switch turn-on currents, and switch turn-off currents. Regions of operation are defined, and various circuit characteristics are derived to facilitate the converter design.

The Rated Voltage Determination of DC Building Power Supply System Considering Human Beings Safety

NASA Astrophysics Data System (ADS)

Wang, Zhicheng; Yu, Kansheng; Xie, Guoqiang; Zou, Jin

2018-01-01

Generally two-level voltages are adopted for DC building power supply system. From the point of view of human beings safety, only the lower level voltage which may be contacted barehanded is discussed in this paper based on the related safety thresholds of human beings current effect. For several voltage levels below 100V recommended by IEC, the body current and current density of human electric shock under device normal work condition, as well as effect of unidirectional single impulse currents of short durations are calculated and analyzed respectively. Finally, DC 60V is recommended as the lower level rating voltage through the comprehensive consideration of technical condition and cost of safety criteria.
Modularized multilevel and z-source power converter as renewable energy interface for vehicle and grid-connected applications

NASA Astrophysics Data System (ADS)

Cao, Dong

Due the energy crisis and increased oil price, renewable energy sources such as photovoltaic panel, wind turbine, or thermoelectric generation module, are used more and more widely for vehicle and grid-connected applications. However, the output of these renewable energy sources varies according to different solar radiation, wind speed, or temperature difference, a power converter interface is required for the vehicle or grid-connected applications. Thermoelectric generation (TEG) module as a renewable energy source for automotive industry is becoming very popular recently. Because of the inherent characteristics of TEG modules, a low input voltage, high input current and high voltage gain dc-dc converters are needed for the automotive load. Traditional high voltage gain dc-dc converters are not suitable for automotive application in terms of size and high temperature operation. Switched-capacitor dc-dc converters have to be used for this application. However, high voltage spike and EMI problems exist in traditional switched-capacitor dc-dc converters. Huge capacitor banks have to be utilized to reduce the voltage ripple and achieve high efficiency. A series of zero current switching (ZCS) or zero voltage switching switched-capacitor dc-dc converters have been proposed to overcome the aforementioned problems of the traditional switched-capacitor dc-dc converters. By using the proposed soft-switching strategy, high voltage spike is reduced, high EMI noise is restricted, and the huge capacitor bank is eliminated. High efficiency, high power density and high temperature switched-capacitor dc-dc converters could be made for the TEG interface in vehicle applications. Several prototypes have been made to validate the proposed circuit and confirm the circuit operation. In order to apply PV panel for grid-connected application, a low cost dc-ac inverter interface is required. From the use of transformer and safety concern, two different solutions can be implemented, non-isolated or isolated PV inverter. For the non-isolated transformer-less solution, a semi-Z-source inverter for single phase photovoltaic systems has been proposed. The proposed semi-Z-source inverter utilizes only two switching devices with doubly grounded feature. The total cost have been reduced, the safety and EMI issues caused by the high frequency ground current are solved. For the transformer isolated solution, a boost half-bridge dc-ac micro-inverter has been proposed. The proposed boost half-bridge dc-dc converter utilizes only two switching devices with zero voltage switching features which is able to reduce the total system cost and power loss.
Modeling and analysis of fractional order DC-DC converter.

PubMed

Radwan, Ahmed G; Emira, Ahmed A; AbdelAty, Amr M; Azar, Ahmad Taher

2017-07-11

Due to the non-idealities of commercial inductors, the demand for a better model that accurately describe their dynamic response is elevated. So, the fractional order models of Buck, Boost and Buck-Boost DC-DC converters are presented in this paper. The detailed analysis is made for the two most common modes of converter operation: Continuous Conduction Mode (CCM) and Discontinuous Conduction Mode (DCM). Closed form time domain expressions are derived for inductor currents, voltage gain, average current, conduction time and power efficiency where the effect of the fractional order inductor is found to be strongly present. For example, the peak inductor current at steady state increases with decreasing the inductor order. Advanced Design Systems (ADS) circuit simulations are used to verify the derived formulas, where the fractional order inductor is simulated using Valsa Constant Phase Element (CPE) approximation and Generalized Impedance Converter (GIC). Different simulation results are introduced with good matching to the theoretical formulas for the three DC-DC converter topologies under different fractional orders. A comprehensive comparison with the recently published literature is presented to show the advantages and disadvantages of each approach. Copyright © 2017 ISA. Published by Elsevier Ltd. All rights reserved.
Review of the development of multi-terminal HVDC and DC power grid

NASA Astrophysics Data System (ADS)

Chen, Y. X.

2017-11-01

Traditional power equipment, power-grid structures, and operation technology are becoming increasingly powerless with the large-scale renewable energy access to the grid. Thus, we must adopt new technologies, new equipment, and new grid structure to satisfy future requirements in energy patterns. Accordingly, the multiterminal direct current (MTDC) transmission system is receiving increasing attention. This paper starts with a brief description of current developments in MTDC worldwide. The MTDC project, which has been placed into practical operation, is introduced by the Italian-Corsica-Sardinian three-terminal high-voltage DC (HVDC) project. We then describe the basic characteristics and regulations of multiterminal DC transmission. The current mainstream of several control methods are described. In the third chapter, the key to the development of MTDC system or hardware and software technology that restricts the development of multiterminal DC transmission is discussed. This chapter focuses on the comparison of double-ended HVDC and multiterminal HVDC in most aspects and subsequently elaborates the key and difficult point of MTDC development. Finally, this paper summarizes the prospect of a DC power grid. In a few decades, China can build a strong cross-strait AC-DC hybrid power grid.
DEFINED CONTRIBUTION PLANS, DEFINED BENEFIT PLANS, AND THE ACCUMULATION OF RETIREMENT WEALTH

PubMed Central

Poterba, James; Rauh, Joshua; Venti, Steven; Wise, David

2010-01-01

The private pension structure in the United States, once dominated by defined benefit (DB) plans, is currently divided between defined contribution (DC) and DB plans. Wealth accumulation in DC plans depends on the participant's contribution behavior and on financial market returns, while accumulation in DB plans is sensitive to a participant's labor market experience and to plan parameters. This paper simulates the distribution of retirement wealth under representative DB and DC plans. It uses data from the Health and Retirement Study (HRS) to explore how asset returns, earnings histories, and retirement plan characteristics contribute to the variation in retirement wealth outcomes. We simulate DC plan accumulation by randomly assigning individuals a share of wages that they and their employer contribute to the plan. We consider several possible asset allocation strategies, with asset returns drawn from the historical return distribution. Our DB plan simulations draw earnings histories from the HRS, and randomly assign each individual a pension plan drawn from a sample of large private and public defined benefit plans. The simulations yield distributions of both DC and DB wealth at retirement. Average retirement wealth accruals under current DC plans exceed average accruals under private sector DB plans, although DC plans are also more likely to generate very low retirement wealth outcomes. The comparison of current DC plans with more generous public sector DB plans is less definitive, because public sector DB plans are more generous on average than their private sector counterparts. PMID:21057597
Construction and evaluation of photovoltaic power generation and power storage system using SiC field-effect transistor inverter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oku, Takeo, E-mail: oku@mat.usp.ac.jp; Matsumoto, Taisuke; Ohishi, Yuya

A power storage system using spherical silicon (Si) solar cells, maximum power point tracking charge controller, lithium-ion battery and a direct current-alternating current (DC-AC) inverter was constructed. Performance evaluation of the DC-AC inverter was carried out, and the DC-AC conversion efficiencies of the SiC field-effect transistor (FET) inverter was improved compared with those of the ordinary Si-FET based inverter.
Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aghili Yajadda, Mir Massoud

2014-10-21

We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at highmore » voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.« less
Building the analytical response in frequency domain of AC biased bolometers. Application to Planck/HFI

NASA Astrophysics Data System (ADS)

Sauvé, Alexandre; Montier, Ludovic

2016-12-01

Context: Bolometers are high sensitivity detector commonly used in Infrared astronomy. The HFI instrument of the Planck satellite makes extensive use of them, but after the satellite launch two electronic related problems revealed critical. First an unexpected excess response of detectors at low optical excitation frequency for ν < 1 Hz, and secondly the Analog To digital Converter (ADC) component had been insufficiently characterized on-ground. These two problems require an exquisite knowledge of detector response. However bolometers have highly nonlinear characteristics, coming from their electrical and thermal coupling making them very difficult to model. Goal: We present a method to build the analytical transfer function in frequency domain which describe the voltage response of an Alternative Current (AC) biased bolometer to optical excitation, based on the standard bolometer model. This model is built using the setup of the Planck/HFI instrument and offers the major improvement of being based on a physical model rather than the currently in use had-hoc model based on Direct Current (DC) bolometer theory. Method: The analytical transfer function expression will be presented in matrix form. For this purpose, we build linearized versions of the bolometer electro thermal equilibrium. A custom description of signals in frequency is used to solve the problem with linear algebra. The model performances is validated using time domain simulations. Results: The provided expression is suitable for calibration and data processing. It can also be used to provide constraints for fitting optical transfer function using real data from steady state electronic response and optical response. The accurate description of electronic response can also be used to improve the ADC nonlinearity correction for quickly varying optical signals.
Current instability and burnout of HEMT structures

NASA Astrophysics Data System (ADS)

Vashchenko, V. A.; Sinkevitch, V. F.

1996-06-01

The burnout mechanism and region of high conductivity formation under breakdown of pseudomorphic GalnAs/GaAlAs and GaAs/GaAlAs HEMT structures have been studied in a pulsed and direct current (d.c.) regime. Peculiarities of the HEMT breakdown have been compared with a GaAs MESFET structure of the same topology. It appears that in all types of investigated structures the drain voltage increase is limited by the transition into a high conductivity state as a result of "parasitic" avalanche-injection conductivity modulation of the undoped GaAs or i-GaAs layer. It has been established that the transition into a high conductivity state is caused by holes from the drain avalanche region in the channel and is the result of a mutual intensification of the avalanche generation rate near the drain and the injection level from the source contact. It turns out that under a typical gate bias operation the transition in the high conductivity state is accompanied by a negative differential conductivity (NDC) and results in the formation of high current density filaments. The resulting high local overheating in the filament region is the cause of local melting and burnout of the HEMT structures.
Design and modeling of a planar probe for power measurements in a capacitive plasma sheath

NASA Astrophysics Data System (ADS)

Gahan, D.; Hopkins, M. B.; Ellingboe, A. R.

2004-09-01

The design and modeling of a planar probe for power measurement in a capacitive RF sheath is described. The probe is to be biased negatively, using a DC power supply, while simultaneously being driven with an RF voltage. A simple model has been developed which describes the voltage, current and impedance from the generator to the probe surface incorporating the transmission line. A conventional method to determine the power through such a probe would be to measure the voltage, current and their phase relationship very close to the probe surface. This can be very difficult to do with much accuracy since the load is almost purely reactive. An alternative method is discussed. The model shows that for certain lengths of transmission line there exists a point on that transmission line where the imaginary impedance goes to zero. If the power is measured at this point where the current and voltage are almost in phase the result should be more accurate. A brief description of the model is given along with some results for its validation. The operation of the power sensor used is also explained.
Design of conduction cooling system for a high current HTS DC reactor

NASA Astrophysics Data System (ADS)

Dao, Van Quan; Kim, Taekue; Le Tat, Thang; Sung, Haejin; Choi, Jongho; Kim, Kwangmin; Hwang, Chul-Sang; Park, Minwon; Yu, In-Keun

2017-07-01

A DC reactor using a high temperature superconducting (HTS) magnet reduces the reactor’s size, weight, flux leakage, and electrical losses. An HTS magnet needs cryogenic cooling to achieve and maintain its superconducting state. There are two methods for doing this: one is pool boiling and the other is conduction cooling. The conduction cooling method is more effective than the pool boiling method in terms of smaller size and lighter weight. This paper discusses a design of conduction cooling system for a high current, high temperature superconducting DC reactor. Dimensions of the conduction cooling system parts including HTS magnets, bobbin structures, current leads, support bars, and thermal exchangers were calculated and drawn using a 3D CAD program. A finite element method model was built for determining the optimal design parameters and analyzing the thermo-mechanical characteristics. The operating current and inductance of the reactor magnet were 1,500 A, 400 mH, respectively. The thermal load of the HTS DC reactor was analyzed for determining the cooling capacity of the cryo-cooler. The study results can be effectively utilized for the design and fabrication of a commercial HTS DC reactor.
Influence of Substrate Biasing on (Ba,Sr)TiO3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

NASA Astrophysics Data System (ADS)

Matsumoto, Takeshi; Niino, Atsushi; Ohtsu, Yasunori; Misawa, Tatsuya; Yonesu, Akira; Fujita, Hiroharu; Miyake, Shoji

2004-03-01

(Ba,Sr)TiO3 (BST) films were deposited by electron cyclotron resonance (ECR) plasma sputtering with mirror confinement. DC bias voltage was applied to Pt/Ti/SiO2/Si substrates during deposition to vary the intensity of bombardment of energetic ions and to modify film properties. BST films deposited on the substrates at floating potential (approximately +20 V) were found to be amorphous, while films deposited on +40 V-biased substrates were crystalline in spite of a low substrate temperature below 648 K. In addition, atomic diffusion, which causes deterioration in the electrical properties of the films, was hardly observed in the crystallized films deposited with +40 V bias perhaps due to the low substrate temperature. Plasma diagnoses revealed that application of a positive bias to the substrate reduced the energy of ion bombardment and increased the density of excited neutral particles, which was assumed to result in the promotion of chemical reactions during deposition and the crystallization of BST films at a low temperature.
A study of electrostatic spring softening for dual-axis micromirror

NASA Astrophysics Data System (ADS)

Zhao, Yi; E H Tay, Francis; Zhou, Guangya; Siong Chau, Fook

2006-08-01

Electrostatic spring softening is an important characteristic of electrostatically actuated dual-axis micromirror, since it lowers the resonant frequencies. This paper presents an approach based on approximating the electrostatic forces by the first-order Taylor's series expansion to investigate this characteristic. The dual-axis micromirror studied in this paper has three motion modes, two torsional (about x- and y-axis, respectively) and one translational (about z-axis). The stiffnesses of all these modes are softened by a DC bias voltage applied to the mirror plate. The resonant frequencies are lowered with the increment of the bias voltage. The relationship of the bias voltage and the resonant frequencies of all the motion modes is derived. The analytical results show that the resonant frequency curves are affected by the capacitor geometries, i.e. the gap between the mirror plate and the electrodes and the electrodes size. The lowering curves drop slowly when the bias voltage is small. While for large bias voltage, the lowering curves drop rapidly. The experiment results are consistent with those obtained by the analytical approach.
In vivo optimisation study for multi-baseline MR-based thermometry in the context of hyperthermia using MR-guided high intensity focused ultrasound for head and neck applications.

PubMed

Pichardo, Samuel; Köhler, Max; Lee, Justin; Hynnyen, Kullervo

2014-12-01

In this in vivo study, the feasibility to perform hyperthermia treatments in the head and neck using magnetic resonance image-guided high intensity focused ultrasound (MRgHIFU) was established using a porcine acute model. Porcine specimens with a weight between 17 and 18 kg were treated in the omohyoid muscle in the neck. Hyperthermia was applied with a target temperature of 41 °C for 30 min using a Sonalleve MRgHIFU system. MR-based thermometry was calculated using water-proton resonance frequency shift and multi-baseline look-up tables indexed by peak-to-peak displacement (Dpp) measurements using a pencil-beam navigator. Three hyperthermia experiments were conducted at different Dpp values of 0.2, 1.0 and 3.0 mm. An optimisation study was carried out to establish the optimal parameters controlling the multi-baseline method that ensured a minimisation of spatial-average peak-to-peak temperature (TSA-pp) and temperature direct current bias (TSA-DC). The multi-baseline technique reduced considerably the noise on both TSA-pp and TSA-DC. The reduction of noise was more important when Dpp was higher. For Dpp = 3 mm the average (±standard deviation (SD)) of TSA-pp and TSA-DC was reduced from 4.5 (± 2.5) and 2.5 (±0.6) °C, respectively, to 0.8 (± 0.7) and 0.09 (± 0.2) °C. This in vivo study showed the level of noise in PRFS-based thermometry introduced by respiratory motion in the context of MRgHIFU hyperthermia treatment for head and neck and the feasibility of reducing this noise using a multi-baseline technique.
Research on design feasibility of high-power light-weight dc-to-dc converters for space power applications

NASA Technical Reports Server (NTRS)

Wilson, T. G.

1981-01-01

Utilizing knowledge gained from past experience with experimental current-or-voltage step-up dc-to-dc converter power stages operating at output powers up to and in excess of 2 kW, a new experimental current-or-voltage step-up power stage using paralleled bipolar junction transistors (BJTs) as the controlled power switch, was constructed during the current reporting period. The major motivation behind the construction of this new experimental power stage was to improve the circuit layout so as to reduce the effects of stray circuit parasitic inductances resulting from excess circuit lead lengths and circuit loops, and to take advantage of the layout improvements which could be made when some recently-available power components, particularly power diodes and polypropylene filter capacitors, were incorporated into the design.
A Study of 4-level DC-DC Boost Inverter with Passive Component Reduction Consideration

NASA Astrophysics Data System (ADS)

Kasiran, A. N.; Ponniran, A.; Harimon, M. A.; Hamzah, H. H.

2018-04-01

This study is to analyze design principles of boost inductor and capacitor used in the 4-level DC-DC boost converter to realize size reduction of passive component referring to their attributes. The important feature of this circuit is that most of the boost-up energy is transferred from the capacitor-clamped to the output side which the small inductance can be used at the input side. The inductance of the boost inductor is designed by referring the inductor current ripple. On the other hand, the capacitance of the capacitor-clamped is designed by considering voltage stress on semiconductor devices and also the used switching frequency. Besides that, according to the design specifications, the required inductance in 4-level DC-DC boost converter is decreased compared to a conventional conventional DC-DC boost converter. Meanwhile, voltage stress on semiconductor device is depending on the maximum voltage ripple of the capacitor-clamped. A 50 W 4-level DC-DC boost converter prototype has been constructed. The results show that the inductor current ripple was 1.15 A when the inductors, 1 mH and 0.11 mH were used in the conventional and 4-level DC-DC boost converters, respectively. Thus, based on the experimental results, it shows that the reduction of passive components by referring to their attributes in 4-level DC-DC boost converter is achieved. Moreover, the decreasing of voltage stress on the semiconductor devices is an advantage for the selection of low ON-resistance of the devices which will contribute to the reduction of the semiconductor conduction loss. The integration result of boost converter and H-bridge inverter is also shown.
Amplification of Genomic DNA for Decoy Receptor 3 Predicts Post-Resection Disease Recurrence in Breast Cancer Patients.

PubMed

Kanbayashi, Chizuko; Koyama, Yu; Ichikawa, Hiroshi; Sakata, Eiko; Hasegawa, Miki; Toshikawa, Chie; Manba, Naoko; Ikarashi, Mayuko; Kobayashi, Takashi; Minagawa, Masahiro; Kosugi, Shin-Ichi; Wakai, Toshifumi

2014-02-01

Decoy receptor 3 (DcR3), a member of the tumor necrosis factor receptor (TNFR) superfamily, shows inhibitory effects on Fas-mediated apoptosis. Currently, data are lacking on the correlation between DcR3 and the recurrence of breast cancer. The authors examined DcR3 mRNA expression and genomic amplification in breast cancer, and investigated the effect of DcR3 gene amplification on prognosis of patients. A total of 95 patients formed the basis of the current retrospective study. DcR3 mRNA expression in breast cancer tissues was examined by RNase protection assay and in situ hybridization. DcR3 gene amplification was examined by quantitative polymerase chain reaction. The correlation between DcR3 gene amplification status and clinicopathological factors was examined and also the relationship between DcR3-Amp and relapse and survival. The relative copy numbers of DcR3 genomic DNA correlated significantly with the levels of DcR3 mRNA expression (ρ = 0.755, P = 0.0067). In addition, lymphatic invasion correlated significantly with DcR3 gene amplification (P = 0.012). However, there was no correlation between the remaining clinicopathological factors and DcR3 gene amplification. In the univariate analysis, the recurrence-free survival (RFS) rate of patients who were positive for DcR3 gene amplification was significantly lower than that of patients who were negative for DcR3 gene amplification (P = 0.0271). Multivariate analysis showed that DcR3 gene amplification (P = 0.028) and disease stage (P < 0.001) remained significant independent predictors of RFS. DcR3 gene amplification was significantly correlated with lymphatic invasion, and also DcR3 gene amplification predicts recurrence after resection, which may be an important prognostic factor in breast cancer patients.
Apparatuses and method for converting electromagnetic radiation to direct current

DOEpatents

Kotter, Dale K; Novack, Steven D

2014-09-30

An energy conversion device may include a first antenna and a second antenna configured to generate an AC current responsive to incident radiation, at least one stripline, and a rectifier coupled with the at least one stripline along a length of the at least one stripline. An energy conversion device may also include an array of nanoantennas configured to generate an AC current in response to receiving incident radiation. Each nanoantenna of the array includes a pair of resonant elements, and a shared rectifier operably coupled to the pair of resonant elements, the shared rectifier configured to convert the AC current to a DC current. The energy conversion device may further include a bus structure operably coupled with the array of nanoantennas and configured to receive the DC current from the array of nanoantennas and transmit the DC current away from the array of nanoantennas.
Dendritic cells for active immunotherapy: optimizing design and manufacture in order to develop commercially and clinically viable products.

PubMed

Nicolette, C A; Healey, D; Tcherepanova, I; Whelton, P; Monesmith, T; Coombs, L; Finke, L H; Whiteside, T; Miesowicz, F

2007-09-27

Dendritic cell (DC) active immunotherapy is potentially efficacious in a broad array of malignant disease settings. However, challenges remain in optimizing DC-based therapy for maximum clinical efficacy within manufacturing processes that permit quality control and scale-up of consistent products. In this review we discuss the critical issues that must be addressed in order to optimize DC-based product design and manufacture, and highlight the DC based platforms currently addressing these issues. Variables in DC-based product design include the type of antigenic payload used, DC maturation steps and activation processes, and functional assays. Issues to consider in development include: (a) minimizing the invasiveness of patient biological material collection; (b) minimizing handling and manipulations of tissue at the clinical site; (c) centralized product manufacturing and standardized processing and capacity for commercial-scale production; (d) rapid product release turnaround time; (e) the ability to manufacture sufficient product from limited starting material; and (f) standardized release criteria for DC phenotype and function. Improvements in the design and manufacture of DC products have resulted in a handful of promising leads currently in clinical development.
Power Strategy in DC/DC Converters to Increase Efficiency of Electrical Stimulators.

PubMed

Aqueveque, Pablo; Acuña, Vicente; Saavedra, Francisco; Debelle, Adrien; Lonys, Laurent; Julémont, Nicolas; Huberland, François; Godfraind, Carmen; Nonclercq, Antoine

2016-06-13

Power efficiency is critical for electrical stimulators. Battery life of wearable stimulators and wireless power transmission in implanted systems are common limiting factors. Boost DC/DC converters are typically needed to increase the supply voltage of the output stage. Traditionally, boost DC/DC converters are used with fast control to regulate the supply voltage of the output. However, since stimulators are acting as current sources, such voltage regulation is not needed. Banking on this, this paper presents a DC/DC conversion strategy aiming to increase power efficiency. It compares, in terms of efficiency, the traditional use of boost converters to two alternatives that could be implemented in future hardware designs.

Cirrus Dopant Nano-Composite Coatings

DTIC Science & Technology

2014-11-01

100 200 300 400 500 600 HARDNESS (HV) MICROHARDNESS - ELECTROPLATED NICKEL STANDARD DC PLATED DOPED DC PLATED DOPED PULSE PLATED ↑48% 10...STANDARD COATING HARDNESS (HV) DOPED COATING MICROHARDNESS - ELECTROPLATED ZN NI ↑32% DC ZnNi Cirrus ZnNi Current Test Applications cirrus nano
Electromigration failures under bidirectional current stress

NASA Astrophysics Data System (ADS)

Tao, Jiang; Cheung, Nathan W.; Hu, Chenming

1998-01-01

Electromigration failure under DC stress has been studied for more than 30 years, and the methodologies for accelerated DC testing and design rules have been well established in the IC industry. However, the electromigration behavior and design rules under time-varying current stress are still unclear. In CMOS circuits, as many interconnects carry pulsed-DC (local VCC and VSS lines) and bidirectional AC current (clock and signal lines), it is essential to assess the reliability of metallization systems under these conditions. Failure mechanisms of different metallization systems (Al-Si, Al-Cu, Cu, TiN/Al-alloy/TiN, etc.) and different metallization structures (via, plug and interconnect) under AC current stress in a wide frequency range (from mHz to 500 MHz) has been study in this paper. Based on these experimental results, a damage healing model is developed, and electromigration design rules are proposed. It shows that in the circuit operating frequency range, the "design-rule current" is the time-average current. The pure AC component of the current only contributes to self-heating, while the average (DC component) current contributes to electromigration. To ensure longer thermal-migration lifetime under high frequency AC stress, an additional design rule is proposed to limit the temperature rise due to self-joule heating.
Experimental demonstration of real-time adaptively modulated DDO-OFDM systems with a high spectral efficiency up to 5.76bit/s/Hz transmission over SMF links.

PubMed

Chen, Ming; He, Jing; Tang, Jin; Wu, Xian; Chen, Lin

2014-07-28

In this paper, a FPGAs-based real-time adaptively modulated 256/64/16QAM-encoded base-band OFDM transceiver with a high spectral efficiency up to 5.76bit/s/Hz is successfully developed, and experimentally demonstrated in a simple intensity-modulated direct-detection optical communication system. Experimental results show that it is feasible to transmit a raw signal bit rate of 7.19Gbps adaptively modulated real-time optical OFDM signal over 20km and 50km single mode fibers (SMFs). The performance comparison between real-time and off-line digital signal processing is performed, and the results show that there is a negligible power penalty. In addition, to obtain the best transmission performance, direct-current (DC) bias voltage for MZM and launch power into optical fiber links are explored in the real-time optical OFDM systems.
Direct current dielectric barrier assistant discharge to get homogeneous plasma in capacitive coupled discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yinchang, E-mail: ycdu@mail.ustc.edu.cn; Max-Planck Institute for Extraterrestrial Physics, D-85748 Garching; Li, Yangfang

In this paper, we propose a method to get more homogeneous plasma in the geometrically asymmetric capacitive coupled plasma (CCP) discharge. The dielectric barrier discharge (DBD) is used for the auxiliary discharge system to improve the homogeneity of the geometrically asymmetric CCP discharge. The single Langmuir probe measurement shows that the DBD can increase the electron density in the low density volume, where the DBD electrodes are mounted, when the pressure is higher than 5 Pa. By this manner, we are able to improve the homogeneity of the plasma production and increase the overall density in the target volume. At last,more » the finite element simulation results show that the DC bias, applied to the DBD electrodes, can increase the homogeneity of the electron density in the CCP discharge. The simulation results show a good agreement with the experiment results.« less
AC magnetic field measurement using a small flip coil system for rapid cycling AC magnets at the China Spallation Neutron Source (CSNS)

NASA Astrophysics Data System (ADS)

Zhou, Jianxin; Kang, Wen; Li, Shuai; Liu, Yudong; Liu, Yiqin; Xu, Shouyan; Guo, Xiaoling; Wu, Xi; Deng, Changdong; Li, Li; Wu, Yuwen; Wang, Sheng

2018-02-01

The China Spallation Neutron Source (CSNS) has two major accelerator systems, a linear accelerator and a rapid cycling synchrotron (RCS). The RCS accelerator is used to accumulate and accelerate protons from the energy of 80 MeV to the design energy of 1.6 GeV at the repetition rate of 25 Hz, and extract the high energy beam to the target. The main magnets of the RCS accelerator are excited by AC current with DC bias. The magnetic field quality is very important for the RCS accelerator operation, since it should guarantee and focus a circulating beam. In order to characterize the AC magnets, a small flip coil measurement system has been developed and one of each type of AC magnets has been studied. The measurement system and selected measurement results are presented in this paper.
THz Pulse Detection by Multilayered GeTe/Sb2Te3.

PubMed

Makino, Kotaro; Kuromiya, Shota; Takano, Keisuke; Kato, Kosaku; Nakajima, Makoto; Saito, Yuta; Tominaga, Junji; Iida, Hitoshi; Kinoshita, Moto; Nakano, Takashi

2016-11-30

We proposed and demonstrated terahertz (THz) pulse detection by means of multilayered GeTe/Sb 2 Te 3 phase-change memory materials that are also known as a multilayer topological insulator-normal insulator (MTN) system. THz time-domain spectroscopy measurement was performed for MTN films with different multilayer repetitions as well as a conventional as-grown Ge-Te-Sb (GST) alloy film. It was found that MTNs absorb THz waves and that the absorption coefficient depends on the number of layers, while the as-grown GST alloy film was almost transparent for THz waves. Simple MTN-based THz detection devices were fabricated, and the THz-induced change in the current signal was measured when a DC bias voltage was applied between the electrodes. We confirmed that irradiation of THz pulse causes a decrease in the resistance of the MTNs. This result indicates that our devices are capable of THz detection.
Polarization-multiplexed 2×2 phosphor-LED wireless light communication without using analog equalization and optical blue filter

NASA Astrophysics Data System (ADS)

Yeh, C. H.; Chen, H. Y.; Liu, Y. L.; Chow, C. W.

2015-01-01

We propose and experimentally demonstrate a 380 (2×190) Mbps phosphor-light-emitting-diode (LED) based visible light communication (VLC) system by using 2×2 polarization-multiplexing design for in-building access applications. To the best of our knowledge, this is the first time of employing polarization-multiplexing to achieve a high VLC transmission capacity by using phosphor-based white-LED without optical blue filter. Besides, utilizing the optimum resistor-inductor-capacity (RLC) bias-tee design, it can not only perform the function of combining the direct-current (DC) and the electrical data signal, but also act as a simple LED-Tx circuit. No optical blue filter and complicated post-equalization are required at the Rx. Here, the orthogonal-frequency-division-multiplexing (OFDM) quadrature-amplitude-modulation (QAM) with bit-loading is employed to enhance the transmission data rate.
Input current shaped ac-to-dc converters

NASA Technical Reports Server (NTRS)

1985-01-01

Input current shaping techniques for ac-to-dc converters were investigated. Input frequencies much higher than normal, up to 20 kHz were emphasized. Several methods of shaping the input current waveform in ac-to-dc converters were reviewed. The simplest method is the LC filter following the rectifier. The next simplest method is the resistor emulation approach in which the inductor size is determined by the converter switching frequency and not by the line input frequency. Other methods require complicated switch drive algorithms to construct the input current waveshape. For a high-frequency line input, on the order of 20 kHz, the simple LC cannot be discarded so peremptorily, since the inductor size can be compared with that for the resistor emulation method. In fact, since a dc regulator will normally be required after the filter anyway, the total component count is almost the same as for the resistor emulation method, in which the filter is effectively incorporated into the regulator.
DC current induced metal-insulator transition in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3}/LaAlO{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Haoliang; CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026; Luo, Zhenlin, E-mail: zlluo@ustc.edu.cn

2014-05-15

The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3} (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO{sub 3} substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The T{sub MI} of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 10{sup 9} A•m{sup −2}more » to 4.9 × 10{sup 9} A•m{sup −2}. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.« less
Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Omveer, E-mail: poonia.omveer@gmail.com; Dahiya, Raj P.; Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039

In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely themore » crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.« less
Investigations of a voltage-biased microwave cavity for quantum measurements of nanomechanical resonators

NASA Astrophysics Data System (ADS)

Rouxinol, Francisco; Hao, Hugo; Lahaye, Matt

2015-03-01

Quantum electromechanical systems incorporating superconducting qubits have received extensive interest in recent years due to their promising prospects for studying fundamental topics of quantum mechanics such as quantum measurement, entanglement and decoherence in new macroscopic limits, also for their potential as elements in technological applications in quantum information network and weak force detector, to name a few. In this presentation we will discuss ours efforts toward to devise an electromechanical circuit to strongly couple a nanomechanical resonator to a superconductor qubit, where a high voltage dc-bias is required, to study quantum behavior of a mechanical resonator. Preliminary results of our latest generation of devices integrating a superconductor qubit into a high-Q voltage biased microwave cavities are presented. Developments in the circuit design to couple a mechanical resonator to a qubit in the high-Q voltage bias CPW cavity is discussed as well prospects of achieving single-phonon measurement resolution. National Science Foundation under Grant No. DMR-1056423 and Grant No. DMR-1312421.
Review of terahertz semiconductor sources

NASA Astrophysics Data System (ADS)

Wei, Feng

2012-03-01

Terahertz (THz) technology can be used in information science, biology, medicine, astronomy, and environmental science. THz sources are the key devices in THz applications. The author gives a brief review of THz semiconductor sources, such as GaAs1-xNx Gunn-like diodes, quantum wells (QWs) negative-effective-mass (NEM) THz oscillators, and the THz quantum cascade lasers (QCLs). THz current self-oscillation in doped GaAs1-xNx diodes driven by a DC electric field was investigated. The current self-oscillation is associated with the negative differential velocity effect in the highly nonparabolic conduction band of this unique material system. The current self-oscillations and spatiotemporal current patterns in QW NEM p+pp+ diodes was studied by considering scattering contributions from impurities, acoustic phonons, and optic phonons. It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies. The NEM p+pp+ diode may be used as an electrically tunable THz source. Meanwhile, by using the Monte Carlo method, the device parameters of resonant-phonon THz QCLs were optimized. The results show that the calculated gain is more sensitive to the injection barrier width, the doping concentration, and the phonon extraction level separation, which is consistent with the experiments.
Monolithic millimeter-wave diode array beam controllers: Theory and experiment

NASA Technical Reports Server (NTRS)

Sjogren, L. B.; Liu, H.-X. L.; Wang, F.; Liu, T.; Wu, W.; Qin, X.-H.; Chung, E.; Domier, C. W.; Luhmann, N. C., Jr.; Maserjian, J.

1992-01-01

In the current work, multi-function beam control arrays have been fabricated and have successfully demonstrated amplitude control of transmitted beams in the W and D bands (75-170 GHz). While these arrays are designed to provide beam control under DC bias operation, new designs for high-speed electronic and optical control are under development. These arrays will fill a need for high-speed watt-level beam switches in pulsed reflectometer systems under development for magnetic fusion plasma diagnostics. A second experimental accomplishment of the current work is the demonstration in the 100-170 GHz (D band) frequency range of a new technique for the measurement of the transmission phase as well as amplitude. Transmission data can serve as a means to extract ('de-embed') the grid parameters; phase information provides more complete data to assist in this process. Additional functions of the array beam controller yet to be tested include electronically controlled steering and focusing of a reflected beam. These have application in the areas of millimeter-wave electronic scanning radar and reflectometry, respectively.
Direct Current Contamination of Kilohertz Frequency Alternating Current Waveforms

PubMed Central

Franke, Manfred; Bhadra, Niloy; Bhadra, Narendra; Kilgore, Kevin

2014-01-01

Kilohertz Frequency Alternating Current (KHFAC) waveforms are being evaluated in a variety of physiological settings because of their potential to modulate neural activity uniquely when compared to frequencies in the sub-kilohertz range. However, the use of waveforms in this frequency range presents some unique challenges regarding the generator output. In this study we explored the possibility of undesirable contamination of the KHFAC waveforms by direct current (DC). We evaluated current- and voltage-controlled KHFAC waveform generators in configurations that included a capacitive coupling between generator and electrode, a resistive coupling and combinations of capacitive with inductive coupling. Our results demonstrate that both voltage- and current-controlled signal generators can unintentionally add DC-contamination to a KHFAC signal, and that capacitive coupling is not always sufficient to eliminate this contamination. We furthermore demonstrated that high value inductors, placed in parallel with the electrode, can be effective in eliminating DC-contamination irrespective of the type of stimulator, reducing the DC contamination to less than 1 μA. This study highlights the importance of carefully designing the electronic setup used in KHFAC studies and suggests specific testing that should be performed and reported in all studies that assess the neural response to KHFAC waveforms. PMID:24820914
Investigation of surface charge density on solid-liquid interfaces by modulating the electrical double layer.

PubMed

Moon, Jong Kyun; Song, Myung Won; Pak, Hyuk Kyu

2015-05-20

A solid surface in contact with water or aqueous solution usually carries specific electric charges. These surface charges attract counter ions from the liquid side. Since the geometry of opposite charge distribution parallel to the solid-liquid interface is similar to that of a capacitor, it is called an electrical double layer capacitor (EDLC). Therefore, there is an electrical potential difference across an EDLC in equilibrium. When a liquid bridge is formed between two conducting plates, the system behaves as two serially connected EDLCs. In this work, we propose a new method for investigating the surface charge density on solid-liquid interfaces. By mechanically modulating the electrical double layers and simultaneously applying a dc bias voltage across the plates, an ac electric current can be generated. By measuring the voltage drop across a load resistor as a function of bias voltage, we can study the surface charge density on solid-liquid interfaces. Our experimental results agree very well with the simple equivalent electrical circuit model proposed here. Furthermore, using this method, one can determine the polarity of the adsorbed state on the solid surface depending on the material used. We expect this method to aid in the study of electrical phenomena on solid-liquid interfaces.
Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System

PubMed Central

Yang, Jong-Ryul; Lee, Woo-Jae; Han, Seong-Tae

2016-01-01

A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s. PMID:26950128
Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System.

PubMed

Yang, Jong-Ryul; Lee, Woo-Jae; Han, Seong-Tae

2016-03-02

A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheremisin, Alexander B., E-mail: acher612@gmail.com; Kuznetsov, Sergey N.; Stefanovich, Genrikh B.

Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. We propose a simple routine to fabricate indium doped ZnO-based TFT with satisfactory characteristics and acceptable stability against a bias stress in ambient room air. To this end, a channel layer of 15 nm in thickness was deposited on cold substrate by DC reactive magnetron co-sputtering of metal Zn-In target. It is demonstrated that the increase of In concentration in ZnO matrix up to 5% leads to negative threshold voltage (V{sub T}) shift and an increase of field effect mobility (μ) and a decrease ofmore » subthreshold swing (SS). When dopant concentration reaches the upper level of 5% the best TFT parameters are achieved such as V{sub T} = 3.6 V, μ = 15.2 cm{sup 2}/V s, SS = 0.5 V/dec. The TFTs operate in enhancement mode exhibiting high turn on/turn off current ratio more than 10{sup 6}. It is shown that the oxidative post-fabrication annealing at 250{sup o}C in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. A possible cause of this effect is discussed.« less
Circulating Current Suppressing Control’s Impact on Arm Inductance Selection for Modular Multilevel Converter

DOE PAGES

Li, Yalong; Jones, Edward A.; Wang, Fred

2016-10-13

Arm inductor in a modular multilevel converter (MMC) is used to limit the circulating current and dc short circuit fault current. The circulating current in MMC is dominated by second-order harmonic, which can be largely reduced with circulating current suppressing control. By analyzing the mechanism of the circulating current suppressing control, it is found that the circulating current at switching frequency becomes the main harmonic when suppression control is implemented. Unlike the second-order harmonic that circulates only within the three phases, switching frequency harmonic also flows through the dc side and may further cause high-frequency dc voltage harmonic. This articlemore » develops the theoretical relationship between the arm inductance and switching frequency circulating current, which can be used to guide the arm inductance selection. The experimental results with a downscaled MMC prototype verify the existence of the switching frequency circulating current and its relationship with arm inductance.« less
Development, Integration and Testing of Automated Triggering Circuit for Hybrid DC Circuit Breaker

NASA Astrophysics Data System (ADS)

Kanabar, Deven; Roy, Swati; Dodiya, Chiragkumar; Pradhan, Subrata

2017-04-01

A novel concept of Hybrid DC circuit breaker having combination of mechanical switch and static switch provides arc-less current commutation into the dump resistor during quench in superconducting magnet operation. The triggering of mechanical and static switches in Hybrid DC breaker can be automatized which can effectively reduce the overall current commutation time of hybrid DC circuit breaker and make the operation independent of opening time of mechanical switch. With this view, a dedicated control circuit (auto-triggering circuit) has been developed which can decide the timing and pulse duration for mechanical switch as well as static switch from the operating parameters. This circuit has been tested with dummy parameters and thereafter integrated with the actual test set up of hybrid DC circuit breaker. This paper deals with the conceptual design of the auto-triggering circuit, its control logic and operation. The test results of Hybrid DC circuit breaker using this circuit have also been discussed.

Inactivation of Crotalus atrox venom hemorrhagic activity by direct current exposure using hens' egg assay.

PubMed

Calzia, Daniela; Ravera, Silvia; Aluigi, Maria Grazia; Falugi, Carla; Morelli, Alessandro; Panfoli, Isabella

2011-01-01

The hemotoxic venoms of Viperidae and Crotalidae are responsible for most of the evenomations in the United States, West Africa, India, South-East Asia, New Guinea, and Latin America. We previously reported that a short exposure of Crotalus atrox venom to direct electric current (dc) from a low-voltage generator, in solution, causes consistent and irreversible inactivation of venom phospholipase A(2) and metalloproteases. Here we report by in vivo assay on chicken embryos at stage 18 of development according to Hamburger and Hamilton that the hemorrhagic activity of C. atrox venom is lost after exposure to dc (from low voltage). Venom was exposed to dc ranging between 0 and 1 mA. dc values above 0.7 mA abolished hemorrhage. Such in vivo data, showing that dc neutralizes C. atrox venom hemorrhagic activity suggest that a deeper knowledge is needed to understand the relationship among dc and biological matter. Copyright © 2011 Wiley Periodicals, Inc.
[Electrophysiological markers of middle cerebral artery blood flow velocity in healthy subjects].

PubMed

Fokin, V F; Ponomareva, N V; Kuntsevich, G I

2013-01-01

to determine electrophysiological markers of middle cerebral artery blood flow velocity (BFV). transcranial Doppler registration of middle cerebral artery BFV and direct current (DC) potentials recording from surface of head were performed in 30 healthy volunteers. Analysis of correlation between the BFV and DC potentials was used. significant correlation between BFV and DC potential characteristics was observed. The highest correlation was found between BFV in middle cerebral artery and the difference of DC potentials between central and temporal areas of head (r = 0,55; p = 0,003). These areas coincide with the location of middle cerebral artery and the correlation observed may be connected with streaming potential generated by the blood flow in middle cerebral artery. If electrode placement did not coincide with blood current, DC potentials and BFV were not correlated. it is assumed that electrical field created BFV in middle cerebral artery may contribute to the generation of DC potentials registered from the head.
Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khaldi, O.; Kassmi, M.; El Manar University, LMOP, 2092 Tunis

2014-08-28

Capacitance nonlinearities were studied in atomic layer deposited HfO{sub 2} films using two types of signals: a pure ac voltage of large magnitude (ac nonlinearities) and a small ac voltage superimposed to a large dc voltage (dc nonlinearities). In theory, ac and dc nonlinearities should be of the same order of magnitude. However, in practice, ac nonlinearities are found to be an order of magnitude higher than dc nonlinearities. Besides capacitance nonlinearities, hopping conduction is studied using low-frequency impedance measurements and is discussed through the correlated barrier hopping model. The link between hopping and nonlinearity is established. The ac nonlinearitiesmore » are ascribed to the polarization of isolated defect pairs, while dc nonlinearities are attributed to electrode polarization which originates from defect percolation paths. Both the ac and dc capacitance nonlinearities display an exponential variation with voltage, which results from field-induced lowering of the hopping barrier energy.« less
Transient analysis of an HTS DC power cable with an HVDC system

NASA Astrophysics Data System (ADS)

Dinh, Minh-Chau; Ju, Chang-Hyeon; Kim, Jin-Geun; Park, Minwon; Yu, In-Keun; Yang, Byeongmo

2013-11-01

The operational characteristics of a superconducting DC power cable connected to a highvoltage direct current (HVDC) system are mainly concerned with the HVDC control and protection system. To confirm how the cable operates with the HVDC system, verifications using simulation tools are needed. This paper presents a transient analysis of a high temperature superconducting (HTS) DC power cable in connection with an HVDC system. The study was conducted via the simulation of the HVDC system and a developed model of the HTS DC power cable using a real time digital simulator (RTDS). The simulation was performed with some cases of short circuits that may have caused system damage. The simulation results show that during the faults, the quench did not happen with the HTS DC power cable because the HVDC controller reduced some degree of the fault current. These results could provide useful data for the protection design of a practical HVDC and HTS DC power cable system.
Detection of High-impedance Arcing Faults in Radial Distribution DC Systems

NASA Technical Reports Server (NTRS)

Gonzalez, Marcelo C.; Button, Robert M.

2003-01-01

High voltage, low current arcing faults in DC power systems have been researched at the NASA Glenn Research Center in order to develop a method for detecting these 'hidden faults', in-situ, before damage to cables and components from localized heating can occur. A simple arc generator was built and high-speed and low-speed monitoring of the voltage and current waveforms, respectively, has shown that these high impedance faults produce a significant increase in high frequency content in the DC bus voltage and low frequency content in the DC system current. Based on these observations, an algorithm was developed using a high-speed data acquisition system that was able to accurately detect high impedance arcing events induced in a single-line system based on the frequency content of the DC bus voltage or the system current. Next, a multi-line, radial distribution system was researched to see if the arc location could be determined through the voltage information when multiple 'detectors' are present in the system. It was shown that a small, passive LC filter was sufficient to reliably isolate the fault to a single line in a multi-line distribution system. Of course, no modification is necessary if only the current information is used to locate the arc. However, data shows that it might be necessary to monitor both the system current and bus voltage to improve the chances of detecting and locating high impedance arcing faults
States higher in racial bias spend less on disabled medicaid enrollees.

PubMed

Leitner, Jordan B; Hehman, Eric; Snowden, Lonnie R

2018-02-07

While there is considerable state-by-state variation in Medicaid disability expenditure, little is known about the factors that contribution to this variation. Since Blacks disproportionately benefit from Medicaid disability programs, we aimed to gain insight into whether racial bias towards Blacks is one factor that explains state-by-state variation in Medicaid disability expenditures. We compiled 1,764,927 responses of explicit and implicit racial bias from all 50 states and Washington D.C. to generate estimates of racial bias for each state (or territory). We then used these estimates to predict states' expenditure per disabled Medicaid enrollee. We also examined whether the relationship between racial bias and disabled Medicaid enrollee expenditure might vary according to states' level of income for Whites, income for Blacks, or conservatism. States with more explicit or implicit racial bias spent less per disabled Medicaid enrollee. This correlation was strongest in states where Whites had lower income, Blacks had higher income, or conservatism was high. Accordingly, these results suggest that racial bias might play a role in Medicaid disability expenditure in places where Whites have a lower economic advantage or there is a culture of conservatism. This research established correlations between state-level racial bias and Medicaid disability expenditure. Future research might build upon this work to understand the direction of causality and pathways that might explain these correlations. Copyright © 2018 Elsevier Ltd. All rights reserved.
On the modelling of linear-assisted DC-DC voltage regulators for photovoltaic solar energy systems

NASA Astrophysics Data System (ADS)

Martínez-García, Herminio; García-Vílchez, Encarna

2017-11-01

This paper shows the modelling of linear-assisted or hybrid (linear & switching) DC/DC voltage regulators. In this kind of regulators, an auxiliary linear regulator is used, which objective is to cancel the ripple at the output voltage and provide fast responses for load variations. On the other hand, a switching DC/DC converter, connected in parallel with the linear regulator, allows to supply almost the whole output current demanded by the load. The objective of this topology is to take advantage of the suitable regulation characteristics that series linear voltage regulators have, but almost achieving the high efficiency that switching DC/DC converters provide. Linear-assisted DC/DC regulators are feedback systems with potential instability. Therefore, their modelling is mandatory in order to obtain design guidelines and assure stability of the implemented power supply system.
A 10 kW dc-dc converter using IGBTs with active snubbers. [Insulated Gate Bipolar Transistor

NASA Technical Reports Server (NTRS)

Masserant, Brian J.; Shriver, Jeffrey L.; Stuart, Thomas A.

1993-01-01

This full bridge dc-dc converter employs zero voltage switching (ZVS) on one leg and zero current switching (ZCS) on the other. This technique produces exceptionally low IGBT switching losses through the use of an active snubber that recycles energy back to the source. Experimental results are presented for a 10 kW, 20 kHz converter.
ICRF antenna-plasma interactions and its influence on W sputtering in ASDEX upgrade

NASA Astrophysics Data System (ADS)

ASDEX Upgrade Team Bobkov, Vl.; Braun, F.; Colas, L.; Dux, R.; Faugel, H.; Giannone, L.; Herrmann, A.; Kallenbach, A.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Siegl, G.; Wolfrum, E.

2011-08-01

Analysis of the W concentration during ICRF over AUG experimental campaigns confirms the critical role of W antenna limiters for the W content in plasma, though other structures connected to antennas along magnetic field lines cannot be neglected as W sources.Abrupt changes of spectroscopically measured W sputtering patterns are observed which correlate with step-wise changes of connection lengths at antenna limiters. Analysis of discharges with the reversed direction of toroidal magnetic field shows less W release compared to identical discharges with the normal direction. The lower W release is accompanied by lower intensity of fluctuations of reflected ICRF power in the 1-60 kHz range. The observations suggest that local magnetic geometry and density convection at the antennas are at least as important for the W sputtering as the distribution of RF near-fields at the antenna.Measurements of DC currents flowing through the antenna limiters show that the limiters at the active antenna collect predominantly negative DC currents whereas those distant from the active antenna collect predominantly positive DC currents. The latter decrease and become more negative when the intensity of the RF pickup measured at the limiters increases. The mutual compensation between the positive and negative currents can lead to lower values of the DC current than those expected from simplified theoretical models of the RF/DC circuit.
ICRF antenna-plasma interactions and its influence on W sputtering in ASDEX upgrade

NASA Astrophysics Data System (ADS)

Bobkov, Vl.; Braun, F.; Colas, L.; Dux, R.; Faugel, H.; Giannone, L.; Herrmann, A.; Kallenbach, A.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Siegl, G.; Wolfrum, E.; ASDEX Upgrade Team

2011-08-01

Analysis of the W concentration during ICRF over AUG experimental campaigns confirms the critical role of W antenna limiters for the W content in plasma, though other structures connected to antennas along magnetic field lines cannot be neglected as W sources. Abrupt changes of spectroscopically measured W sputtering patterns are observed which correlate with step-wise changes of connection lengths at antenna limiters. Analysis of discharges with the reversed direction of toroidal magnetic field shows less W release compared to identical discharges with the normal direction. The lower W release is accompanied by lower intensity of fluctuations of reflected ICRF power in the 1-60 kHz range. The observations suggest that local magnetic geometry and density convection at the antennas are at least as important for the W sputtering as the distribution of RF near-fields at the antenna. Measurements of DC currents flowing through the antenna limiters show that the limiters at the active antenna collect predominantly negative DC currents whereas those distant from the active antenna collect predominantly positive DC currents. The latter decrease and become more negative when the intensity of the RF pickup measured at the limiters increases. The mutual compensation between the positive and negative currents can lead to lower values of the DC current than those expected from simplified theoretical models of the RF/DC circuit.
Toxoplasma gondii Antigen-Pulsed-Dendritic Cell-Derived Exosomes Induce a Protective Immune Response against T. gondii Infection

PubMed Central

Aline, Fleur; Bout, Daniel; Amigorena, Sébastian; Roingeard, Philippe; Dimier-Poisson, Isabelle

2004-01-01

It was previously demonstrated that immunizing mice with spleen dendritic cells (DCs) that had been pulsed ex vivo with Toxoplasma gondii antigens triggers a systemic Th1-biased specific immune response and induces protection against infection. T. gondii can cause severe sequelae in the fetuses of mothers who acquire the infection during pregnancy, as well as life-threatening neuropathy in immunocompromised patients, in particular those with AIDS. Here, we investigate the efficacy of a novel cell-free vaccine composed of DC exosomes, which are secreted antigen-presenting vesicles that express functional major histocompatibility complex class I and II and T-cell-costimulatory molecules. They have already been shown to induce potent antitumor immune responses. We investigated the potential of DC2.4 cell line-derived exosomes to induce protective immunity against toxoplasmosis. Our data show that most adoptively transferred T. gondii-pulsed DC-derived exosomes were transferred to the spleen, elicited a strong systemic Th1-modulated Toxoplasma-specific immune response in vivo, and conferred good protection against infection. These findings support the possibility that DC-derived exosomes can be used for T. gondii immunoprophylaxis and for immunoprophylaxis against many other pathogens. PMID:15213158
A two-stage monolithic buffer amplifier for 20 GHz satellite communication

NASA Technical Reports Server (NTRS)

Petersen, W. C.; Gupta, A. K.

1983-01-01

Design, fabrication, and test results of a two-stage GaAs monolithic buffer amplifier for 20 GHz satellite communication are described in this paper. A gain of 13 + or - 0.75 dB from 17.7 to 20.2 GHz was obtained from the 1.5 x 1.5 millimeter chip, which includes all necessary bias and dc blocking circuitry.
Stability study of cermet-supported solid oxide fuel cells with bi-layered electrolyte

NASA Astrophysics Data System (ADS)

Zhang, Xinge; Gazzarri, Javier; Robertson, Mark; Decès-Petit, Cyrille; Kesler, Olivera

Performance and stability of five cermet-supported button-type solid oxide fuel cells featuring a bi-layered electrolyte (SSZ/SDC), an SSC cathode, and a Ni-SSZ anode, were analyzed using polarization curves, impedance spectroscopy, and post-mortem SEM observation. The cell performance degradation at 650 °C in H 2/air both with and without DC bias conditions was manifested primarily as an increase in polarization resistance, approximately at a rate of 2.3 mΩ cm 2 h -1 at OCV, suggesting a decrease in electrochemical kinetics as the main phenomenon responsible for the performance decay. In addition, the initial series resistance was about ten times higher than the calculated resistance corresponding to the electrolyte, reflecting a possible inter-reaction between the electrolyte layers that occurred during the sintering stage. In situ and ex situ sintered cathodes showed no obvious difference in cell performance or decay rate. The stability of the cells with and without electrical load was also investigated and no significant influence of DC bias was recorded. Based on the experimental results presented, we preliminarily attribute the performance degradation to electrochemical and microstructural degradation of the cathode.
Piezoelectric two-dimensional nanosheets/anionic layer heterojunction for efficient direct current power generation.

PubMed

Kim, Kwon-Ho; Kumar, Brijesh; Lee, Keun Young; Park, Hyun-Kyu; Lee, Ju-Hyuck; Lee, Hyun Hwi; Jun, Hoin; Lee, Dongyun; Kim, Sang-Woo

2013-01-01

Direct current (DC) piezoelectric power generator is promising for the miniaturization of a power package and self-powering of nanorobots and body-implanted devices. Hence, we report the first use of two-dimensional (2D) zinc oxide (ZnO) nanostructure and an anionic nanoclay layer to generate piezoelectric DC output power. The device, made from 2D nanosheets and an anionic nanoclay layer heterojunction, has potential to be the smallest size power package, and could be used to charge wireless nano/micro scale systems without the use of rectifier circuits to convert alternating current into DC to store the generated power. The combined effect of buckling behaviour of the ZnO nanosheets, a self-formed anionic nanoclay layer, and coupled semiconducting and piezoelectric properties of ZnO nanosheets contributes to efficient DC power generation. The networked ZnO nanosheets proved to be structurally stable under huge external mechanical loads.
Periodic direct current does not promote wound closure in an in vitro dynamic model of cell migration.

PubMed

Godbout, Charles; Frenette, Jérôme

2006-01-01

A prevailing paradigm is that electrical fields can promote cell migration and tissue healing. To further validate this paradigm, we tested the hypothesis that periodic direct current (DC) can enhance wound closure using an in vitro dynamic model of cell migration. Layers of primary fibroblasts were wounded and treated with DC under various voltages. Repair area, cell velocity, and directionality as well as lamellipodium area were evaluated at different times. Direct current had no beneficial effect on cell migration. Moreover, prolonged stimulation under the highest voltage led to significant reduction in wound closure and cell velocity. The reduction of membrane protusions in stimulated cells may be associated with the deleterious effect of DC. Contrary to the authors' expectations, they found that periodic DC did not promote wound closure, a finding that emphasizes the need to clarify the complex effects of electrical fields on migrating cells.
Comparison of Water Vapor Measurements by Airborne Sun Photometer and Diode Laser Hygrometer on the NASA DC-8

DOE Office of Scientific and Technical Information (OSTI.GOV)

Livingston, J. M.; Schmid, Beat; Russell, P. B.

In January-February 2003 the 14-channel NASA Ames Airborne Tracking Sunphotometer 30 (AATS) and the NASA Langley/Ames Diode Laser Hygrometer (DLH) were flown on the NASA DC-8 aircraft. AATS measured column water vapor on the aircraft-to-sun path, while DLH measured local water vapor in the free stream between the aircraft fuselage and an outboard engine cowling. The AATS and DLH measurements were compared for two DC-8 vertical profiles by differentiating the AATS column measurement and/or integrating the DLH local measurement over the altitude range of each profile (7.7-10 km and 1.2-12.5 km). These comparisons extend, for the first time, tests ofmore » AATS water vapor retrievals to altitudes >~6 km and column contents <0.1 g cm-2. To our knowledge this is the first time suborbital spectroscopic water vapor measurements using the 940-nm band have been tested in conditions so high and dry. For both profiles layer water vapor (LWV) from AATS and DLH were highly correlated, with r2 0.998, rms difference 7.2% and bias (AATS minus DLH) 0.9%. For water vapor densities AATS and DLH had r2 0.968, rms difference 27.6%, and bias (AATS minus DLH) -4.2%. These results compare favorably with previous comparisons of AATS water vapor to in situ results for altitudes <~6 km, columns ~0.1 to 5 g cm-2 and densities ~0.1 to 17 g m-3.« less
2D modeling of DC potential structures induced by RF sheaths with transverse currents in front of ICRF antenna

NASA Astrophysics Data System (ADS)

Faudot, E.; Heuraux, S.; Colas, L.

2005-09-01

Understanding DC potential generation in front of ICRF antennas is crucial for long pulse high RF power systems. DC potentials are produced by sheath rectification of these RF potentials. To reach this goal, near RF parallel electric fields have to be computed in 3D and integrated along open magnetic field lines to yield a 2D RF potential map in a transverse plane. DC potentials are produced by sheath rectification of these RF potentials. As RF potentials are spatially inhomogeneous, transverse polarization currents are created, modifying RF and DC maps. Such modifications are quantified on a `test map' having initially a Gaussian shape and assuming that the map remains Gaussian near its summit,the time behavior of the peak can be estimated analytically in presence of polarization current as a function of its width r0 and amplitude φ0 (normalized to a characteristic length for transverse transport and to the local temperature). A `peaking factor' is built from the DC peak potential normalized to φ0, and validated with a 2D fluid code and a 2D PIC code (XOOPIC). In an unexpected way transverse currents can increase this factor. Realistic situations of a Tore Supra antenna are also studied, with self-consistent near fields provided by ICANT code. Basic processes will be detailed and an evaluation of the `peaking factor' for ITER will be presented for a given configuration.
2D modeling of DC potential structures induced by RF sheaths with transverse currents in front of ICRF antenna

DOE Office of Scientific and Technical Information (OSTI.GOV)

Faudot, E.; Heuraux, S.; Colas, L.

2005-09-26

Understanding DC potential generation in front of ICRF antennas is crucial for long pulse high RF power systems. DC potentials are produced by sheath rectification of these RF potentials. To reach this goal, near RF parallel electric fields have to be computed in 3D and integrated along open magnetic field lines to yield a 2D RF potential map in a transverse plane. DC potentials are produced by sheath rectification of these RF potentials. As RF potentials are spatially inhomogeneous, transverse polarization currents are created, modifying RF and DC maps. Such modifications are quantified on a 'test map' having initially amore » Gaussian shape and assuming that the map remains Gaussian near its summit,the time behavior of the peak can be estimated analytically in presence of polarization current as a function of its width r0 and amplitude {phi}0 (normalized to a characteristic length for transverse transport and to the local temperature). A 'peaking factor' is built from the DC peak potential normalized to {phi}0, and validated with a 2D fluid code and a 2D PIC code (XOOPIC). In an unexpected way transverse currents can increase this factor. Realistic situations of a Tore Supra antenna are also studied, with self-consistent near fields provided by ICANT code. Basic processes will be detailed and an evaluation of the 'peaking factor' for ITER will be presented for a given configuration.« less
Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.
Theory of multiwave mixing within the superconducting kinetic-inductance traveling-wave amplifier

NASA Astrophysics Data System (ADS)

Erickson, R. P.; Pappas, D. P.

2017-03-01

We present a theory of parametric mixing within the coplanar waveguide (CPW) of a superconducting nonlinear kinetic-inductance traveling-wave (KIT) amplifier engineered with periodic dispersion loadings. This is done by first developing a metamaterial band theory of the dispersion-engineered KIT using a Floquet-Bloch construction and then applying it to the description of mixing of the nonlinear RF traveling waves. Our theory allows us to calculate signal gain versus signal frequency in the presence of a frequency stop gap, based solely on loading design. We present results for both three-wave mixing (3WM), with applied dc bias, and four-wave mixing (4WM), without dc. Our theory predicts an intrinsic and deterministic origin to undulations of 4WM signal gain with signal frequency, apart from extrinsic sources, such as impedance mismatch, and shows that such undulations are absent from 3WM signal gain achievable with dc. Our theory is extensible to amplifiers based on Josephson junctions in a lumped LC-ladder transmission line (TWPA).

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