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Sample records for dc plasma nitriding

  1. Investigation of plasma parameters in an active screen cage-pulsed dc plasma used for plasma nitriding

    NASA Astrophysics Data System (ADS)

    Naeem, M.; Khattak, Z. I.; Zaka-ul-Islam, M.; Shabir, S.; Khan, A. W.; Zakaullah, M.

    2014-11-01

    Active screen cage-pulsed dc plasmas are widely used in the material processing applications such as plasma nitriding, carburizing and nitrocarburizing. Specifically for plasma nitriding applications, a H2-N2 mixture is used. In this article, a study of the electron number density (ne), atomic nitrogen density ([N]), electron temperature ? and the excitation temperature ? is reported in the presence of an active screen cage-pulsed dc plasma. The ne and ? are determined here by a triple Langmuir probe, while [N] and ? are estimated by optical emission spectroscopy (OES). The two temperatures and their ratio ? are compared for different input parameters (such as applied power, gas pressure and H2 percentage). This study is useful in active screen cage plasma nitriding applications where only few plasma diagnostic measurements have been reported.

  2. Microstructure and dry-sliding wear properties of DC plasma nitrided 17-4 PH stainless steel

    NASA Astrophysics Data System (ADS)

    Li, Gui-jiang; Wang, Jun; Li, Cong; Peng, Qian; Gao, Jian; Shen, Bao-luo

    2008-05-01

    An attempt that the precipitation hardening steel 17-4PH was conducted by DC plasma nitriding (DCPN) is made to develop a kind of candidate material for nuclear reactor. Nitriding process performed at temperature ⩽ 400 °C takes effect on creation of the layers composed of S-phase (expanded austenite) and αN‧ (expanded martensite). Up to the temperature of 420 °C, the S-phase peaks disappear due to the transformation occurrence (S-phase → αN‧ + CrN). For the samples nitrided at temperature ⩾ 450 °C, no evidence of αN‧ is found owing to a precipitation (αN‧ → α +CrN) taking place. For the 480 °C/4 h treated sample, it is the surface microhardness that plays the lead role in the wear rate reduction but the surface roughness; while for the 400 °C/4 h treated sample, it is both of the surface roughness and the S-phase formation. Dry sliding wear of the untreated 17-4PH is mainly characterized by strong adhesion, abrasion and oxidation mechanism. Samples nitrided at 400 °C which is dominated by slight abrasion and plastic deformation exhibit the best dry sliding wear resistance compared to the samples nitrided at other temperatures.

  3. Improvement in nano-hardness and corrosion resistance of low carbon steel by plasma nitriding with negative DC bias voltage

    NASA Astrophysics Data System (ADS)

    Alim, Mohamed Mounes; Saoula, Nadia; Tadjine, Rabah; Hadj-Larbi, Fayçal; Keffous, Aissa; Kechouane, Mohamed

    2016-10-01

    In this work, we study the effect of plasma nitriding on nano-hardness and corrosion resistance of low carbon steel samples. The plasma was generated through a radio-frequency inductively coupled plasma source. The substrate temperature increased (by the self-induced heating mechanism) with the treatment time for increasing negative bias voltages. X-rays diffraction analysis revealed the formation of nitride phases (ɛ-Fe2-3N and γ'-Fe4N) in the compound layer of the treated samples. A phase transition occurred from 3.5 kV to 4.0 kV and was accompanied by an increase in the volume fraction of the γ'-Fe4N phase and a decrease in that of the ɛ-Fe2-3N phase. Auger electron spectroscopy revealed a deep diffusion of the implanted nitrogen beyond 320 nm. The nano-hardness increased by ~400% for the nitrogen-implanted samples compared to the untreated state, the nitride phases are believed to participate to the hardening. Potentiodynamic polarization measurements revealed that the plasma nitriding has improved the corrosion resistance behavior of the material. When compared to the untreated state, the sample processed at 4.0 kV exhibits a shift of +500 mV and a reduction to 3% in its corrosion current. These results were obtained for relatively low bias voltages and short treatment time (2 h).

  4. Validity of "sputtering and re-condensation" model in active screen cage plasma nitriding process

    NASA Astrophysics Data System (ADS)

    Saeed, A.; Khan, A. W.; Jan, F.; Abrar, M.; Khalid, M.; Zakaullah, M.

    2013-05-01

    The validity of "sputtering and re-condensation" model in active screen plasma nitriding for nitrogen mass transfer mechanism is investigated. The dominant species including NH, Fe-I, N2+, N-I and N2 along with Hα and Hβ lines are observed in the optical emission spectroscopy (OES) analysis. Active screen cage and dc plasma nitriding of AISI 316 stainless steel as function of treatment time is also investigated. The structure and phases composition of the nitrided layer is studied by X-ray diffraction (XRD). Surface morphology is studied by scanning electron microscopy (SEM) and hardness profile is obtained by Vicker's microhardness tester. Increasing trend in microhardness is observed in both cases but the increase in active screen plasma nitriding is about 3 times greater than that achieved by dc plasma nitriding. On the basis of metallurgical and OES observations the use of "sputtering and re-condensation" model in active screen plasma nitriding is tested.

  5. Nitriding of titanium and its alloys by N2, NH3 or mixtures of N2 + H2 in a dc arc plasma at low pressures ( or = to torr)

    NASA Technical Reports Server (NTRS)

    Avni, R.

    1984-01-01

    The dc glow discharges in different gas mixtures of Ar + N2, Ar + NH3 or Ar + N2 + H2 result in the surface nitriding of Ti metal and its alloy (Ti6Al4V). Various gas mixtures were used in order to establish the main active species governing the nitriding process, i.e., N, N2, NH, or NH2 as excited or ionized particles. The dc discharge was sampled and analyzed by quadruple mass spectrometry (QPMS) and optical emission spectroscopy (OES), and the nitrided samples were analyzed by scanning electron microscopy (SEM) with an EDAX attachment, microhardness, and Fourier transform infrared reflectance spectrometry (FTIR). It was found that the excited and ionized nitrogen and hydrogen atoms are the main species responsible for the nitriding process in a dc glow discharge.

  6. Metal surface nitriding by laser induced plasma

    NASA Astrophysics Data System (ADS)

    Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

    1996-10-01

    We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

  7. Plasma nitriding of titanium alloy: Effect of roughness, hardness, biocompatibility, and bonding with bone cement.

    PubMed

    Khandaker, Morshed; Riahinezhad, Shahram; Li, Yanling; Vaughan, Melville B; Sultana, Fariha; Morris, Tracy L; Phinney, Lucas; Hossain, Khalid

    2016-11-25

    Titanium (Ti) alloys have been widely used in orthopedics and orthodontic surgeries as implants because of their beneficial chemical, mechanical, and biological properties. Improvement of these properties of a Ti alloy, Ti-6Al-4V Eli, is possible by the use of plasma nitriding treatment on the Ti alloy. The novelty of this study is the evaluation of a DC glow discharge nitrogen plasma treatment method on the surface, mechanical and biological properties of Ti alloy. Specifically, this study measured the chemical states, roughness, hardness, and biocompatibility of plasma nitride treated Ti-6Al-4V Eli as well as determined the effect of plasma treatment on the fracture strength between the Ti alloy and bone clement. This study hypothesized that DC glow discharge nitrogen plasma treatment may alter the surface chemical and mechanical states of the Ti alloy that may influence the fracture strength of implant/cement interfaces under static load. This study found that plasma nitride treatment on Ti alloy does not have effect on the roughness and biocompatibility (P value > 0.5), but significantly effect on the hardness and fracture strength of Ti-bone cement interfaces compared to those values of untreated Ti samples (P value < 0.5). Therefore, the DC glow discharge nitrogen plasma treated Ti alloy can potentially be used for orthopedic applications.

  8. Early stages during plasma nitriding of pure iron

    SciTech Connect

    Palacios, M.D.; Martinez, O.; Oseguera, J.

    1995-12-31

    The sequence of nitride formation during the early stages of plasma nitriding of pure iron was studied by optical microscopy, SEM, TEM and x-ray diffraction. Plasma nitriding at {approximately}490 C in a 25 vol.%H{sub 2} + 75 vol.%N{sub 2} mixture starts with the formation of {gamma}{prime}-Fe{sub 4}N after 40s. Once {gamma}{prime} nucleates, it mainly spreads laterally due to diffusion shortcuts in the discontinuous surface nitride layer. Before {gamma}{prime} is continuous on the surface, {epsilon} nucleates on top of it shortly after 40S. Epsilon is then observed to grow, both inwardly and laterally along with {gamma}{prime}. A compact {gamma}{prime}/{epsilon} bilayer forms on the surface at around 100s. The kinetics of nucleation, growth and compactation of the nitrides observed in the present work was significantly more rapid than in any of the nitriding process reported in the literature, including plasma nitriding. The acceleration of the nitriding kinetics in the early stages of plasma nitriding may be attributed to enhanced diffusion resulting from a high nitrogen flux from the plasma atmosphere. The results presented are consistent with the findings of a companion work on modeling the kinetics of nitride layer growth.

  9. The effect of Mo on the characteristics of a plasma nitrided layer of sintered iron

    NASA Astrophysics Data System (ADS)

    Bendo, T.; Maliska, A. M.; Acuña, J. J. S.; Binder, C.; Hammes, G.; Consoni, D. R.; Klein, A. N.

    2016-02-01

    Samples of PM (powder metallurgy) plain iron were superficially enriched with Mo during a sintering process using a DC discharge. The Mo atoms from the cathode produced an enriched layer of approximately 15-20 μm thick, and it was enriched with up to 2.0 at.% Mo. Subsequently, the samples were plasma nitrided in a gas mixture (N2/H2) at different temperatures and nitrogen concentrations. The effect of the molybdenum on the plasma nitrided layer of sintered iron was investigated. Abnormal nitride morphologies that developed in the surface layer were observed. The presence of Mo that was substitutionally dissolved in ferrite influences the nucleation and growth of the iron-nitride compound layer. The microstructure and (local) composition changes of the layers were investigated using scanning and transmission electron microscopy (SEM and TEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and glow discharge optical emission spectroscopy (GDOES) analyses. To evaluate the mechanical properties, Vickers microhardness tests were conducted along the sample cross-sections. According to the nitriding conditions, submicroscopic fcc Mo2N-type nitrides that are coherent with the α-Fe matrix develop, as confirmed by the TEM analysis and by the broadening of the diffraction lines in the X-ray diffractogram. Molybdenum nitrides, γ-Mo2N, with an fcc structure and sphere-like shapes were observed on the sample surface where the Mo concentrations were higher.

  10. First experimental results from DC/DC and AC/DC plasma-based power transformers

    NASA Astrophysics Data System (ADS)

    McEvoy, Aaron; Gibson, William; Nebel, Richard

    2016-10-01

    A plasma-based power transformer has been built and operated in both DC/DC and AC/DC mode. The proprietary Tibbar Plasma Technologies, Inc. transformer design consists of two cylindrically symmetric helical primary electrodes surrounding a low temperature plasma within which a secondary axial current is generated. Initial experimental results have compared well with simulations and moderate conversion efficiencies have been observed. A new proprietary device is currently being constructed that will utilize 3-phase 480 VAC input to achieve higher conversion efficiency and output power. A description of the apparatus and several potential applications will be presented along with preliminary experimental data demonstrating the DC/DC and AC/DC conversion processes. Work performed under ARPA-E contract DE-AR0000677.

  11. Pulsed-DC DBD Plasma Actuators

    NASA Astrophysics Data System (ADS)

    Duong, Alan; McGowan, Ryan; Disser, Katherine; Corke, Thomas; Matlis, Eric

    2016-11-01

    A new powering system for dielectric barrier discharge (DBD) plasma actuators that utilizes a pulsed-DC waveform is presented. The plasma actuator arrangement is identical to most typical AC-DBD designs with staggered electrodes that are separated by a dielectric insulator. However instead of an AC voltage input to drive the actuator, the pulsed-DC utilizes a DC voltage source. The DC source is supplied to both electrodes, and remains constant in time for the exposed electrode. The DC source for the covered electrode is periodically grounded for very short instants and then allowed to rise to the source DC level. This process results in a plasma actuator body force that is significantly larger than that with an AC-DBD at the same voltages. The important characteristics used in optimizing the pulsed-DC plasma actuators are presented. Time-resolved velocity measurements near the actuator are further used to understand the underlying physics of its operation compared to the AC-DBD. Supported by NASA Glenn RC.

  12. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    SciTech Connect

    Hamann, S. Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

    2015-12-15

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

  13. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    NASA Astrophysics Data System (ADS)

    Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

    2015-12-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

  14. Studies on optical emission spectroscopy of nitriding plasma and characterization of nitrided steel

    NASA Astrophysics Data System (ADS)

    Sharma, Manash Kumar

    Plasma in nature is abundant and appears quite beautiful in colour as can be seen in glow of sun and auroras. Plasma produced in laboratories is also quite interesting as a correspondence of the naturally occurring plasmas from a glow discharge to a tokamak. However, plasmas tuned to special conditions have been successfully utilized for material processing, of which, plasma nitriding is one and foremost. The work of the thesis focuses on the setting up of a plasma nitriding system with various diagnostics applied to plasma and plasma treated stainless steels. Emission spectroscopy and probe diagnostics are applied to study the optical and plasma properties whereas austenitic stainless steels are characterized by x-ray diffraction (XRD) and hardness test in order to demonstrate the application of the process. The optical and plasma properties during nitriding are motivating, as these properties will lead to conditions for the formation of surface layer. The formation of iron and chromium nitrides is another important asset of the plasma nitriding process, which is tested by XRD technique, while the surface hardness is tested by hardness test. Optical properties are found from optical emission spectroscopy (OES) in terms of emission intensities and wavelengths. Langmuir probe (LP) is used for finding variations of plasma parameters with respect to process parameters and to make a comparison of plasma parameters with those of optical and discharge parameters. A correlation between OES and material characterization properties is sought in order to make a clear understanding of the process. In Chapter 1, introduction to plasma, the possible applications with relevance to plasma nitriding and spectroscopy are described. Plasma nitriding (termed in the title as nitriding plasma for convenience) has emerged as a powerful tool in modifying surface properties of a material without affecting the bulk properties. The various advantages over a conventional gas nitriding

  15. Nanotribological response of a plasma nitrided bio-steel.

    PubMed

    Samanta, Aniruddha; Chakraborty, Himel; Bhattacharya, Manjima; Ghosh, Jiten; Sreemany, Monjoy; Bysakh, Sandip; Rane, Ramkrishna; Joseph, Alphonsa; Jhala, Ghanshyam; Mukherjee, Subroto; Das, Mitun; Mukhopadhyay, Anoop K

    2017-01-01

    AISI 316L is a well known biocompatible, austenitic stainless steel (SS). It is thus a bio-steel. Considering its importance as a bio-prosthesis material here we report the plasma nitriding of AISI 316L (SS) followed by its microstructural and nanotribological characterization. Plasma nitriding of the SS samples was carried out in a plasma reactor with a hot wall vacuum chamber. For ease of comparison these plasma nitrided samples were termed as SSPN. The experimental results confirmed the formations of an embedded nitrided metal layer zone (ENMLZ) and an interface zone (IZ) between the ENMLZ and the unnitrided bulk metallic layer zone (BMLZ) in the SSPN sample. These ENMLZ and IZ in the SSPN sample were richer in iron nitride (FeN) chromium nitride (CrN) along with the austenite phase. The results from nanoindentation, microscratch, nanoscratch and sliding wear studies confirmed that the static contact deformation resistance, the microwear, nanowear and sliding wear resistance of the SSPN samples were much better than those of the SS samples. These results were explained in terms of structure-property correlations.

  16. Effect of Plasma Nitriding on the Performance of WC-Co Cutting Tools

    NASA Astrophysics Data System (ADS)

    Hamzaoglu, Ebru; Yilmaz, Safak; Gulmez, Turgut

    2011-04-01

    This paper presents the effect of nitriding process parameters on the cutting performance of WC-Co tools. The cutting performance was measured by CNC machining of GG25 cast iron parts. The hardness and phase composition of nitrided layer were determined for different plasma nitriding temperatures and times. The hardness of the nitrided layer increased at all plasma nitrided conditions investigated. However, the machining performance of the cutting inserts varied in the range between a 60% increase and a 40% decrease after plasma nitriding. The maximum number of machined parts was seen when the insert was nitrided at 600 °C-4 h and at 500 °C-4 h.

  17. A dc Penning Surface-Plasma Source

    DTIC Science & Technology

    2007-11-02

    LA-UR-93-2990 Title: A dc Penning Surface-Plasma Source Author(s): Submitted to: H. Vernon Smith, Jr., Paul Allison, Carl Geisik, David R...Type: HC Number of Copies In Library: 000001 Record ID: 28620 A de Penning Surface-Plasma Source* H. Vernon Smith, Jr., Paul Allison, Carl Geisik...Schechter, J. H. Whealton, and J. J. Donaghy, ATP Conf. Proc. No. 158, 366 (1987). 8) H. V. Smith, Jr., N. M. Schnurr, D. H. Whitaker , and K. E. Kalash

  18. Microstructure and Properties of Plasma Source Nitrided AISI 316 Austenitic Stainless Steel

    NASA Astrophysics Data System (ADS)

    Li, G. Y.; Lei, M. K.

    2017-01-01

    Plasma source nitriding is a relatively new nitriding technology which can overcome those inherent shortcomings associated with conventional direct current plasma nitriding technology such as the arcing surface damage, the edging effect and the hollow cathode effect. There is considerable study on the properties of nitrided samples for laboratorial scale plasma source nitriding system; however, little information has been reported on the industrial-scale plasma source nitriding system. In this work, AISI 316 austenitic stainless steel samples were nitrided by an industrial-scale plasma source nitriding system at various nitriding temperatures (350, 400, 450 and 500 °C) with a floating potential. A high-nitrogen face-centered-cubic phase (γN) formed on the surface of nitrided sample surface. As the nitriding temperature was increased, the γN phase layer thickness increased, varying from 1.5 μm for the lowest nitriding temperature of 350 °C, to 30 μm for the highest nitriding temperature of 500 °C. The maximum Vickers microhardness of the γN phase layer with a peak nitrogen concentration of 20 at.% is about HV 0.1 N 15.1 GPa at the nitriding temperature of 450 °C. The wear and corrosion experimental results demonstrated that the γN phase was formed on the surface of AISI 316 austenitic stainless steel by plasma source nitriding, which exhibits not only high wear resistance, but also good pitting corrosion resistance.

  19. Microstructure and Properties of Plasma Source Nitrided AISI 316 Austenitic Stainless Steel

    NASA Astrophysics Data System (ADS)

    Li, G. Y.; Lei, M. K.

    2016-11-01

    Plasma source nitriding is a relatively new nitriding technology which can overcome those inherent shortcomings associated with conventional direct current plasma nitriding technology such as the arcing surface damage, the edging effect and the hollow cathode effect. There is considerable study on the properties of nitrided samples for laboratorial scale plasma source nitriding system; however, little information has been reported on the industrial-scale plasma source nitriding system. In this work, AISI 316 austenitic stainless steel samples were nitrided by an industrial-scale plasma source nitriding system at various nitriding temperatures (350, 400, 450 and 500 °C) with a floating potential. A high-nitrogen face-centered-cubic phase (γN) formed on the surface of nitrided sample surface. As the nitriding temperature was increased, the γN phase layer thickness increased, varying from 1.5 μm for the lowest nitriding temperature of 350 °C, to 30 μm for the highest nitriding temperature of 500 °C. The maximum Vickers microhardness of the γN phase layer with a peak nitrogen concentration of 20 at.% is about HV 0.1 N 15.1 GPa at the nitriding temperature of 450 °C. The wear and corrosion experimental results demonstrated that the γN phase was formed on the surface of AISI 316 austenitic stainless steel by plasma source nitriding, which exhibits not only high wear resistance, but also good pitting corrosion resistance.

  20. Plasma deposited silicon nitride for indium phosphide encapsulation

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Biedenbender, M. D.; Williams, W. D.

    1989-01-01

    The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

  1. Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

    PubMed Central

    Kim, Tae-Hee; Choi, Sooseok; Park, Dong-Wha

    2016-01-01

    Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO3)3∙xH2O) was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3). Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C3H6N6. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing.

  2. Improvement of wear resistance for C45 steel using plasma nitriding, nitrocarburizing and nitriding/ manganese phosphating duplex treatment

    NASA Astrophysics Data System (ADS)

    Doan, T. V.; Kusmič, D.; Pospíchal, M.; Dobrocký, D.

    2017-02-01

    This article focuses on effect of plasma nitriding, nitrocarburizing and nitriding/manganese phosphating duplex treatments to wear resistance of C45 steel substrate. The wear test “ball on disc” was conducted to evaluate the coefficient of friction and wear rate using the BRUKER UMT-3 tribometer. The analysis results indicated that nitrocarburizing obtained the best wear resistance; the worst wear resistance was plasma nitriding. Manganese phosphating coating enabled to reduce the coefficient of friction enhanced wear resistance nitrided layer. The used surface treatments also improve non-equal wear of tempered surface over the sliding track.

  3. CVD diamond growth by dc plasma torch

    NASA Astrophysics Data System (ADS)

    Klocek, Paul; Hoggins, James T.; Taborek, Peter; McKenna, Tom A.

    1990-12-01

    A dc arc discharge plasma torch has been developed for chemical vapor deposition (CVD) diamond growth. The apparatus and process parameters are described. Free-standing polycrystalline diamond samples of 50 mm by 50 mm by a few mm have been grown at high rates. The Raman spectra of the samples show little nondiamond structure. Transmission electron microscopy indicates that the diamond is highly twinned and has a high defect concentration. The infrared spectra indicate the presence of hydrogen contamination in the diamond via absorption bands associated with carbon-hydrogen motion. 2.

  4. Bone tissue response to plasma-nitrided titanium implant surfaces

    PubMed Central

    FERRAZ, Emanuela Prado; SVERZUT, Alexander Tadeu; FREITAS, Gileade Pereira; SÁ, Juliana Carvalho; ALVES, Clodomiro; BELOTI, Marcio Mateus; ROSA, Adalberto Luiz

    2015-01-01

    A current goal of dental implant research is the development of titanium (Ti) surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces. PMID:25760262

  5. Simulation of the dc Plasma in Carbon Nanotube Growth

    NASA Technical Reports Server (NTRS)

    Hash, David; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

    2003-01-01

    A model for the dc plasma used in carbon nanotube growth is presented, and one-dimensional simulations of an acetylene/ammonia/argon system are performed. The effect of dc bias is illustrated by examining electron temperature, electron and ion densities, and neutral densities. Introducing a tungsten filament in the dc plasma, as in hot filament chemical vapor deposition with plasma assistance, shows negligible influence on the system characteristics.

  6. Moessbauer spectroscopy study on the corrosion resistance of plasma nitrided ASTM F138 stainless steel in chloride solution

    SciTech Connect

    Souza, S.D. de; Olzon-Dionysio, M.; Basso, R.L.O.; Souza, S. de

    2010-10-15

    Plasma nitriding of ASTM F138 stainless steel samples has been carried out using dc glow discharge under 80% H{sub 2}-20% N{sub 2} gas mixture, at 673 K, and 2, 4, and 7 h time intervals, in order to investigate the influence of treatment time on the microstructure and the corrosion resistance properties. The samples were characterized by scanning electron microscopy, glancing angle X-ray diffraction and conversion electron Moessbauer spectroscopy, besides electrochemical tests in NaCl aerated solution. A modified layer of about 6 {mu}m was observed for all the nitrided samples, independent of nitriding time. The X-ray diffraction analysis shows broad {gamma}{sub N} phase peaks, signifying a great degree of nitrogen supersaturation. Besides {gamma}{sub N,} the Moessbauer spectroscopy results indicated the occurrence of {gamma}' and {epsilon} phases, as well as some other less important phases. Corrosion measurements demonstrate that the plasma nitriding time affects the corrosion resistance and the best performance is reached at 4 h treatment. It seems that the {epsilon}/{gamma}' fraction ratio plays an important role on the resistance corrosion. Additionally, the Moessbauer spectroscopy was decisive in this study, since it was able to identify and quantify the iron phases that influence the corrosion resistance of plasma nitrided ASTM F138 samples.

  7. Bright nitriding of Cr-Mo-steels in plasma and gas

    SciTech Connect

    Larisch, B.; Spies, H.J.; Hoeck, K.

    1995-12-31

    Although the reduction of the white layer in special gas atmospheres directly after nitriding and bright nitriding were reported a long time ago, the white layer is mostly removed by mechanical or chemical means in industrial practice. The main reason for this is poor process control. However, new requirements such as the duplex treatment (nitriding + hardcoating), demand a more detailed examination of bright nitriding. Today, new possibilities exist for process control in gas nitriding by solid electrolyte sensors. Steel grades 17CrMoV10 and 31CrMoV9 were bright nitrided in gas and plasma. In contrast to the above experiments, in the two-step technology no white layer forms in the first step (20min) at a higher nitriding potential. By this, the formation of a soft surface layer (of iron) can be avoided. Limits of this technology--for instance in the depth of the formed nitrided case--are discussed. Reasons for the often discussed faster nitriding in plasma are explained on the basis of the experimental results. The influence of ion bombardment in plasma nitriding on the activation of the surface and the nitriding results is discussed in comparison to gas nitriding. In this context the advantages of plasma nitriding--with respect to higher chromium alloyed steels (>5%Cr), which tend to passivation--are shown.

  8. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  9. Synthesis of silicon nitride particles in pulsed Rf plasmas

    SciTech Connect

    Buss, R.J.; Babu, S.V.

    1995-11-01

    Silicon nitride (hydrogenated) particles are synthesized using a pulsed 13.56 Mhz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex situ particle analysis are used to study the nucleation and growth. For SiH{sub 4}/Ar and SiH{sub 4}/NH{sub 3} plasmas, an initial very rapid growth phase is followed by slower growth, approaching the rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting the plasma-on time. The size dispersion of the particles is large and is consistent with a process of continuous nucleation during the plasma-on period. The large polydispersity is also reported for silicon particles from silane and differs from that reported in other laboratories. The silicon nitride particle morphology is compared to that of silicon and silicon carbide particles generated by the same technique. Whereas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si{sub 3}N{sub 4} particles are smooth but non-spherical. Post-plasma oxidation kinetics of the particles are studied with FTIR and are consistent with a hydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the elimination of hydrogen, rendering the silicon nitride resistant to atmospheric oxidation.

  10. Effect of Plasma Nitriding Parameters on the Wear Resistance of Alloy Inconel 718

    NASA Astrophysics Data System (ADS)

    Kovací, Halim; Ghahramanzadeh ASL, Hojjat; Albayrak, Çigdem; Alsaran, Akgün; Çelik, Ayhan

    2016-11-01

    The effect of the temperature and duration of plasma nitriding on the microstructure and friction and wear parameters of Inconel 718 nickel alloy is investigated. The process of plasma nitriding is conducted in a nitrogen-hydrogen gaseous mixture at a temperature of 400, 500 and 600°C for 1 and 4 h. The modulus of elasticity of the nitrided layer, the micro- and nanohardness, the surface roughness, the friction factor and the wear resistance of the alloy are determined prior to and after the nitriding. The optimum nitriding regime providing the best tribological characteristics is determined.

  11. Damage development of gallium nitride under plasma exposure

    NASA Astrophysics Data System (ADS)

    Ogawa, Daisuke; Banno, Yoshitsugu; Nakano, Yoshitaka; Nakamura, Keiji

    2016-09-01

    Plasma damage has been focused on since 1990s. In this era, this issue was manly targeted onto silicon-based semiconductors. However, since the gallium nitride (GaN) was paid attentions to after blue LEDs, they start to consider the damages given to GaN as well. We have so far utilized photoluminescence (PL) emission from the surface of GaN film to monitor the evolution of damage given by plasma exposure. This measurement gives us clues how plasma exposure changed intermediate electronical states in the film without taking the film out of the chamber. First of all, we analyzed the development of damage given by argon plasma, which is one of the most fundamental plasma to analyze. Argon plasma is responsible to give only physical damages over a GaN film. Our PL measurements showed a significant decrease within approximately 10 seconds after the plasma exposure started. This means that ions and radiations created from the plasma gives significant damages to the GaN film even short period of time. Chlorine-related gas is normally utilized for chemical etching. Chlorine species realize continuous damage layer removals, but some reports already mentioned that the processed device has difference electrical properties after the plasma exposure. In this presentation, we will show what happens to GaN film after the plasma exposure in terms of crystal structure and impurities of GaN, by connecting PL emission and ex-situ measurements.

  12. Pulsed plasma ion nitriding and control of the compound zone (or white layer)

    SciTech Connect

    Pye, D.

    1995-12-31

    Ion nitriding of alloy steels has been studied for many years using the process gases of hydrogen and nitrogen and utilizing specific furnace control parameters, and has proven to be both an effective and commercially viable process when dealing with uniform shapes. However, complex shape geometries require a different approach as far as the process method is concerned. It is through the use of pulsed plasma DC power in conjunction with hot wall furnace technology that complex shapes, such as gears and extrusion dies, can be successfully treated with no serious risk of mechanical damage to the part as a result of arc discharging. Consideration of the material surface is extremely important and is effected by sputter cleaning. The ion nitriding process, using pulsed DC power and process temperatures ranging from 800 F (425 C) to 1,050 F (565 C) and cycle times from 1--60 hours, have been used, depending on the pretreatment which may have taken place (such as tempering of the martensitic stainless steels and highly alloyed steels). The ability to control the process parameters allows considerable flexibility in tailoring specific chemical and metallurgical surface properties, which are desirable for a particular material and shape being treated.

  13. Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

    SciTech Connect

    Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2007-10-15

    We have investigated the stability of amorphous germanium nitride (Ge{sub 3}N{sub 4}) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge{sub 3}N{sub 4} layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO{sub 2} layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO{sub 2} islands on the surfaces. These findings indicate that although Ge{sub 3}N{sub 4} layers have superior thermal stability compared to the GeO{sub 2} layers, Ge{sub 3}N{sub 4} reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge{sub 3}N{sub 4} insulator or passivation layers.

  14. Caracterisation of Titanium Nitride Layers Deposited by Reactive Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Popescu, Mihaela; Uţu, Dragoş

    2011-01-01

    Forming and cutting tools are subjected to the intense wear solicitations. Usually, they are either subject to superficial heat treatments or are covered with various materials with high mechanical properties. In recent years, thermal spraying is used increasingly in engineering area because of the large range of materials that can be used for the coatings. Titanium nitride is a ceramic material with high hardness which is used to cover the cutting tools increasing their lifetime. The paper presents the results obtained after deposition of titanium nitride layers by reactive plasma spraying (RPS). As deposition material was used titanium powder and as substratum was used titanium alloy (Ti6Al4V). Macroscopic and microscopic (scanning electron microscopy) images of the deposited layers and the X ray diffraction of the coatings are presented. Demonstration program with layers deposited with thickness between 68,5 and 81,4 μm has been achieved and presented.

  15. Structural modification of boron nitride nanotubes by plasma irradiation

    NASA Astrophysics Data System (ADS)

    Ikuno, Takashi; Begtrup, Gavi; Aloni, Shaul; Kis, Andras; Okawa, David; Zettl, Alex

    2006-03-01

    Boron nitride (BN) and boron-carbon-nitride (B-C-N) nanotubes (NTs) are candidates for potential nanosized electronic and optical devices due to extraordinary physical and chemical properties. In terms of electronic property, in contrast to the insulating BNNTs with about 5.5 eV band gap, ternary B-C-N NTs has semiconducting property, the band gap of which is primarily determined by their chemical compositions. Although one of the methods to make B-C-N NTs is C doping to BNNTs, it is difficult to modify the structure and composition of BNNTs due to its chemical inertness and strong sp2 bond. In this study, we performed to modify the structure and composition of BNNTs by plasma irradiation for synthesizing B-C-N NTs. Hydrocarbon plasma was utilized for structural modification of BNNTs. The structural properties and the composition were characterized by high-resolution transmission electron microscopy and electron energy loss spectroscopy. After the plasma irradiation, outer several BN layers were modified to wavy structure from straight shape, and the defects were observed in almost BN layers, indicating destruction of crystal structure by collision of energetic particles in plasma and BNNTs. There are 5 -- 30 at% of C in BNNTs and C atoms were inhomogeneously distributed in B-C-N NTs. The electron transport property of the modified B-C-N NTs will be reported in our presentation.

  16. Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

    NASA Astrophysics Data System (ADS)

    Al-Shareef, H. N.; Karamcheti, A.; Luo, T. Y.; Bersuker, G.; Brown, G. A.; Murto, R. W.; Jackson, M. D.; Huff, H. R.; Kraus, P.; Lopes, D.; Olsen, C.; Miner, G.

    2001-06-01

    In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications.

  17. Nitriding molybdenum: Effects of duration and fill gas pressure when using 100-Hz pulse DC discharge technique

    NASA Astrophysics Data System (ADS)

    Ikhlaq, U.; R., Ahmad; Shafiq, M.; Saleem, S.; S. Shah, M.; Hussain, T.; A. Khan, I.; K., Abbas; S. Abbas, M.

    2014-10-01

    Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) are used for the structural and morphological analysis of the nitrided layers. Vickers' microhardness tester is utilized to investigate surface microhardness. Phase analysis shows the formation of more molybdenum nitride molecules for longer nitriding durations at fill gas pressures of 2 mbar and 3 mbar (1 bar = 105 Pa). A considerable increase in surface microhardness (approximately by a factor of 2) is observed for longer duration (10 h) and 2-mbar pressure. Longer duration (10 h) and 2-mbar fill gas pressure favors the formation of homogeneous, smooth, hard layers by the incorporation of more nitrogen.

  18. Band gap effects of hexagonal boron nitride using oxygen plasma

    SciTech Connect

    Sevak Singh, Ram; Leong Chow, Wai; Yingjie Tay, Roland; Hon Tsang, Siu; Mallick, Govind; Tong Teo, Edwin Hang

    2014-04-21

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

  19. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    NASA Astrophysics Data System (ADS)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  20. Reactive Spark Plasma Sintering (SPS) of Nitride Reinforced Titanium Alloy Composites (Postprint)

    DTIC Science & Technology

    2014-08-15

    AFRL-RX-WP-JA-2014-0177 REACTIVE SPARK PLASMA SINTERING (SPS) OF NITRIDE REINFORCED TITANIUM ALLOY COMPOSITES (POSTPRINT) Jaimie S...titanium–vanadium alloys, has been achieved by introducing reactive nitrogen gas during the spark plasma sintering (SPS) of blended titanium and...lcomReactive spark plasma sintering (SPS) of nitride reinforced titanium alloy compositeshttp://dx.doi.org/10.1016/j.jallcom.2014.08.049 0925-8388

  1. Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

    SciTech Connect

    Weeks, Stephen Nowling, Greg; Fuchigami, Nobi; Bowes, Michael; Littau, Karl

    2016-01-15

    Progress in transistor scaling has increased the demands on the material properties of silicon nitride (SiN{sub x}) thin films used in device fabrication and at the same time placed stringent restrictions on the deposition conditions employed. Recently, low temperature plasma enhanced atomic layer deposition has emerged as a viable technique for depositing these films with a thermal budget compatible with semiconductor processing at sub-32 nm technology nodes. For these depositions, it is desirable to use precursors that are free from carbon and halogens that can incorporate into the film. Beyond this, it is necessary to develop processing schemes that minimize the wet etch rate of the film as it will be subjected to wet chemical processing in subsequent fabrication steps. In this work, the authors introduce low temperature deposition of SiN{sub x} using neopentasilane [NPS, (SiH{sub 3}){sub 4}Si] in a plasma enhanced atomic layer deposition process with a direct N{sub 2} plasma. The growth with NPS is compared to a more common precursor, trisilylamine [TSA, (SiH{sub 3}){sub 3 }N] at identical process conditions. The wet etch rates of the films deposited with NPS are characterized at different plasma conditions and the impact of ion energy is discussed.

  2. Improving electrochemical properties of AISI 1045 steels by duplex surface treatment of plasma nitriding and aluminizing

    NASA Astrophysics Data System (ADS)

    Haftlang, Farahnaz; Habibolahzadeh, Ali; Sohi, Mahmoud Heydarzadeh

    2015-02-01

    Improvement in electrochemical behavior of AISI 1045 steel after applying aluminum nitride coating was investigated in 3.5% NaCl solution, using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) analyses. Aluminum nitride coating was applied on the steel surface by duplex treatment of pack aluminizing and plasma nitriding. Some specimens were plasma nitrided followed by aluminizing (PN-Al), while the others were pack aluminized followed by plasma nitriding (Al-PN). Topological and structural studies of the modified surfaces were conducted using scanning electron microscope (SEM) equipped by energy dispersive X-ray spectroscope (EDS), and X-ray diffractometer (XRD). The electrochemical measurements showed that the highest corrosion and polarization (Rp) resistances were obtained in PN-Al specimens, having single phase superficial layer of AlN. Pitting mechanism was dominant reason of lower corrosion resistance in the Al-PN specimens.

  3. Plasma-assisted interface engineering of boron nitride nanostructure films.

    PubMed

    Pakdel, Amir; Bando, Yoshio; Golberg, Dmitri

    2014-10-28

    Today many aspects of science and technology are progressing into the nanoscale realm where surfaces and interfaces are intrinsically important in determining properties and performances of materials and devices. One familiar phenomenon in which interfacial interactions play a major role is the wetting of solids. In this work we use a facile one-step plasma method to control the wettability of boron nitride (BN) nanostructure films via covalent chemical functionalization, while their surface morphology remains intact. By tailoring the concentration of grafted hydroxyl groups, superhydrophilic, hydrophilic, and hydrophobic patterns are created on the initially superhydrophobic BN nanosheet and nanotube films. Moreover, by introducing a gradient of the functional groups, directional liquid spreading toward increasing [OH] content is achieved on the films. The resulting insights are meant to illustrate great potentials of this method to tailor wettability of ceramic films, control liquid flow patterns for engineering applications such as microfluidics and biosensing, and improve the interfacial contact and adhesion in nanocomposite materials.

  4. Mechanical properties and biocompatibility of plasma-nitrided laser-cut 316L cardiovascular stents.

    PubMed

    Arslan, Erdem; Iğdil, Mustafa C; Yazici, Hilal; Tamerler, Candan; Bermek, Hakan; Trabzon, Levent

    2008-05-01

    The effect of surface modification of laser-cut 316L cardiovascular stents by low-T plasma nitriding was evaluated in terms of mechanical properties and biocompatibility of the stents. The plasma nitriding was performed at 400, 450 or 500 degrees C using various ratios of nitrogen-hydrogen gas mixtures. The flexibility and radial strength were measured in crimped and expanded state of the stents, respectively. The mechanical properties could be adjusted and improved by plasma nitriding conducted at temperatures lower than 450 degrees C and/or nitrogen content less than 10% in the treatment gas. An osteoblast cell culture model system was utilized to investigate the effect of plasma nitriding of the stents on the biological response towards the stents, using biological criteria such as cell viability, alkaline phosphatase and nitric oxide production. In terms of cell viability and alkaline phosphatase production, the plasma nitriding procedure did not appear to negatively affect the biocompatibility of the 316L steel stents. However, in terms of nitric oxide production that was slightly increased in the presence of the plasma-nitrided stents, an indirect improvement in the biocompatibility could possibly be expected.

  5. Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride

    NASA Astrophysics Data System (ADS)

    Harris, H.; Biswas, N.; Temkin, H.; Gangopadhyay, S.; Strathman, M.

    2001-12-01

    Plasma enhanced deposition of amorphous aluminum nitride (AlN) using trimethylaluminum, hydrogen, and nitrogen was performed in a capacitively coupled plasma system. Temperature was varied from 350 to 550 °C, and pressure dependence of the film structure was investigated. Films were characterized by Fourier transform infrared, Rutherford backscattering (RBS), ellipsometry, and x-ray diffraction (XRD). The films are amorphous in nature, as indicated by XRD. Variations in the refractive index were observed in ellipsometric measurements, which is explained by the incorporation of carbon in the films, and confirmed by RBS. Capacitance-voltage, conductance-voltage (G-V), and current-voltage measurements were performed to reveal bulk and interface electrical properties. The electrical properties showed marked dependence on processing conditions of the AlN films. Clear peaks as observed in the G-V characteristics indicated that the losses are predominantly due to interface states. The interface state density ranged between 1010 and 1011eV-1 cm-2. Annealing in hydrogen resulted in lowering of interface state density values.

  6. Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

    NASA Astrophysics Data System (ADS)

    Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

    2015-04-01

    NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

  7. Surface hardening of VT-22 alloy by inductively coupled plasma nitriding and magnetron deposition of TiN films

    NASA Astrophysics Data System (ADS)

    Kharkov, Maxim M.; Kaziev, Andrey V.; Tumarkin, Alexander V.; Drobinin, Vyacheslav E.; Stepanova, Tatiana V.; Pisarev, Alexander A.

    2017-01-01

    The surface of VT-22 Russian grade titanium alloy samples was modified by inductively coupled plasma (ICP) nitriding followed by magnetron deposition of TiN coatings. Different operating conditions of ICP nitriding and magnetron deposition were considered. The microhardness depth profiles were measured for samples after nitriding. The performance of TiN coatings was examined with a scratch tester.

  8. Dust structurization observed in a dc glow discharge dusty plasma

    NASA Astrophysics Data System (ADS)

    Heinrich, Jonathon R.; Kim, Su-Hyun; Merlino, Robert L.

    2010-11-01

    Dusty plasmas, which are inherently open systems which require an ionization source to replenish the plasma absorbed on the grains, tend to exhibit self-organization. Various structures have been observed in dusty plasmas such as dust crystals, voids, and vortices. Due to the presence of drifting ions in dc discharge plasmas, spontaneously excited dust acoustic waves are also a common occurrence. By adjusting the discharge parameters we have observed a new phenomenon in dusty plasmas -- the spontaneous formation of three-dimensional stationary dust density structures. These structures appear as an ordered pattern consisting of alternating regions of high and low dust density arranged in a nested bowl-type configuration The stationary structure evolves from dust density waves that slow down as their wavelength decreases and eventually stop moving when the wavelength reaches some minimum size.

  9. Spectroscopic diagnostics of active screen plasma nitriding processes: on the interplay of active screen and model probe plasmas

    NASA Astrophysics Data System (ADS)

    Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Röpcke, J.

    2015-09-01

    In a reactor used for active screen plasma nitriding (ASPN) the interplay of two plasma types, (i) the plasma of the cylindrical active screen driven in a pulsed dc mode (f = 1 kHz, 60% duty cycle) and (ii) the plasma at an internal model probe driven in a cw dc mode, ignited in a low pressure H2-N2 gas mixture (p = 3 mbar) containing small amounts of CH4 and CO2 have been studied by tunable diode laser infrared absorption (TDLAS) and optical emission spectroscopy (OES) techniques. Applying in situ TDLAS the evolution of the carbon containing precursors, CH4 and CO2, and of the reaction products, NH3, HCN, CO and H2O, has been monitored. The degree of dissociation of the carbon containing precursor molecules varied between 70% and 92%. The concentrations of the reaction products were found to be in the range 1012…1015 molecules cm-3. By analyzing the development of the molecular concentrations at changes of gas mixtures and plasma power values, it was found that (i) HCN and NH3 are the main products of plasma conversion in the case of methane admixture and (ii) CO, HCN and NH3 in the carbon dioxide case. The fragmentation efficiencies of methane and carbon dioxide (RF(CH4)  ≈  1…2   ×   1015 molecules J-1, RF(CO2)  ≈  0.5…1.0   ×   1016 molecules J-1) and the respective conversion efficiencies to the product molecules (R C(product) ≈ 1013-1015 molecules J-1) have been determined for different gas mixtures and plasma power values, while the influence of probe and screen plasmas, i.e. the phenomena caused by the interplay of both plasma sources, was analyzed. The additional usage of the plasma at the model probe has a sensitive influence on the generation of the reaction products, in particular that of NH3 and HCN. With the help of OES the rotational temperature of the screen plasma could be determined, which increases with power from 770 K to 950 K. Also with power the ionic component of nitrogen molecules, i

  10. Active screen plasma nitriding enhances cell attachment to polymer surfaces

    NASA Astrophysics Data System (ADS)

    Kaklamani, Georgia; Bowen, James; Mehrban, Nazia; Dong, Hanshan; Grover, Liam M.; Stamboulis, Artemis

    2013-05-01

    Active screen plasma nitriding (ASPN) is a well-established technique used for the surface modification of materials, the result of which is often a product with enhanced functional performance. Here we report the modification of the chemical and mechanical properties of ultra-high molecular weight poly(ethylene) (UHMWPE) using 80:20 (v/v) N2/H2 ASPN, followed by growth of 3T3 fibroblasts on the treated and untreated polymer surfaces. ASPN-treated UHMWPE showed extensive fibroblast attachment within 3 h of seeding, whereas fibroblasts did not successfully attach to untreated UHMWPE. Fibroblast-coated surfaces were maintained for up to 28 days, monitoring their metabolic activity and morphology throughout. The chemical properties of the ASPN-treated UHMWPE surface were studied using X-ray photoelectron spectroscopy, revealing the presence of Csbnd N, Cdbnd N, and Ctbnd N chemical bonds. The elastic modulus, surface topography, and adhesion properties of the ASPN-treated UHMWPE surface were studied over 28 days during sample storage under ambient conditions and during immersion in two commonly used cell culture media.

  11. Optical properties of silicon nitride films formed by plasma-chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Vlasukova, L. A.; Komarov, F. F.; Parkhomenko, I. N.; Milchanin, O. V.; Leont'ev, A. V.; Mudryi, A. V.; Togambaeva, A. K.

    2013-03-01

    The optical properties and structure of layers of silicon nitride deposited on silicon substrates by plasma-aided chemical vapor deposition at 300°C are studied by ellipsometry, Raman scattering, IR spectroscopy, and photoluminescence techniques. It is found that immediately after deposition the silicon nitride contains hydrogen in the form of Si-H bonds. Annealing (1100°C, 30 min) leads to dehydrogenation and densification of the nitride layer. An intense Si3N4 photoluminescence signal is detected in the green. Immediately after deposition the photoluminescence peak appears at 542 nm and annealing shifts it to shorter wavelengths.

  12. dc-plasma-sprayed electronic-tube device

    DOEpatents

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  13. Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

    SciTech Connect

    Shetty, Satish; Shivaprasad, S. M.

    2016-02-07

    We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures—“8 × 8” and “8/3 × 8/3”—form, and further nitridation leads to 1 × 1 stoichiometric silicon nitride. The interface is seen to have the Si{sup 1+} and Si{sup 3+} states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses. The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending.

  14. Sulfide Stress Cracking and Electrochemical Corrosion of Precipitation Hardening Steel After Plasma Oxy-Nitriding

    NASA Astrophysics Data System (ADS)

    Granda-Gutiérrez, E. E.; Díaz-Guillén, J. C.; Díaz-Guillén, J. A.; González, M. A.; García-Vázquez, F.; Muñóz, R.

    2014-11-01

    In this paper, we present the results of a duplex plasma nitriding followed by an oxidizing stage process (which is also referred as oxy-nitriding) on the corrosion behavior of a 17-4PH precipitation hardening stainless steel. The formation of both, expanded martensite (b.c.t. α'N-phase) and chromium oxide (type Cr2O3) in the subsurface of oxy-nitrided samples at specific controlled conditions, leads in a noticeable increasing in the time-to-rupture during the sulfide stress cracking test, in comparison with an untreated reference sample. Oxy-nitriding improves the corrosion performance of the alloy when it is immersed in solutions saturated by sour gas, which extends the application potential of this type of steel in the oil and gas extraction and processing industry. The presence of the oxy-nitrided layer inhibits the corrosion process that occurs in the near-surface region, where hydrogen is liberated after the formation of iron sulfides, which finally produces a fragile fracture by micro-crack propagation; the obtained results suggest that oxy-nitriding slows this process, thus delaying the rupture of the specimen. Moreover, oxy-nitriding produces a hard, sour gas-resistant surface, but do not significantly affect the original chloride ion solution resistance of the material.

  15. Sulfide Stress Cracking and Electrochemical Corrosion of Precipitation Hardening Steel After Plasma Oxy-Nitriding

    NASA Astrophysics Data System (ADS)

    Granda-Gutiérrez, E. E.; Díaz-Guillén, J. C.; Díaz-Guillén, J. A.; González, M. A.; García-Vázquez, F.; Muñóz, R.

    2014-09-01

    In this paper, we present the results of a duplex plasma nitriding followed by an oxidizing stage process (which is also referred as oxy-nitriding) on the corrosion behavior of a 17-4PH precipitation hardening stainless steel. The formation of both, expanded martensite (b.c.t. α'N-phase) and chromium oxide (type Cr2O3) in the subsurface of oxy-nitrided samples at specific controlled conditions, leads in a noticeable increasing in the time-to-rupture during the sulfide stress cracking test, in comparison with an untreated reference sample. Oxy-nitriding improves the corrosion performance of the alloy when it is immersed in solutions saturated by sour gas, which extends the application potential of this type of steel in the oil and gas extraction and processing industry. The presence of the oxy-nitrided layer inhibits the corrosion process that occurs in the near-surface region, where hydrogen is liberated after the formation of iron sulfides, which finally produces a fragile fracture by micro-crack propagation; the obtained results suggest that oxy-nitriding slows this process, thus delaying the rupture of the specimen. Moreover, oxy-nitriding produces a hard, sour gas-resistant surface, but do not significantly affect the original chloride ion solution resistance of the material.

  16. Plasma Nitriding Behavior of Fe-C-M (M = Al, Cr, Mn, Si) Ternary Martensitic Steels

    NASA Astrophysics Data System (ADS)

    Tomio, Yusaku; Kitsuya, Shigeki; Oh-ishi, Keilchiro; Hono, Kazuhiro; Miyamoto, Goro; Furuhara, Tadashi

    2014-01-01

    Change in surface hardness and nitrides precipitated in Fe-0.6C binary and Fe-0.6 mass pct C-1 mass pct M (M = Al, Cr, Mn, Si) ternary martensitic alloys during plasma nitriding were investigated. Surface hardness was hardly increased in the Fe-0.6C binary alloy and slightly increased in Fe-0.6C-1Mn and Fe-0.6C-1Si alloys. On the other hand, it was largely increased in Fe-0.6C-1Al and Fe-0.6C-1Cr alloys. In all the Fe-0.6C-1M alloys except for the Si-added alloy, fine platelet alloy nitrides precipitated inside martensite laths. In the Fe-0.6C-1Si alloy, Si-enriched film was observed mainly at a grain boundary and an interface between cementite and matrix. Crystal structure of nitrides observed in the martensitic alloys was similar to those in Fe-M binary ferritic alloys reported previously. However, there was a difference in hardening behavior between ferrite and martensite due to a high density of dislocations acting as a nucleation site of the nitrides and partitioning of an alloying element between martensite and cementite changing the driving force of precipitation of the nitrides.

  17. Cold atmospheric plasma jet in an axial DC electric field

    NASA Astrophysics Data System (ADS)

    Lin, Li; Keidar, Michael

    2016-08-01

    Cold atmospheric plasma (CAP) jet is currently intensively investigated as a tool for new and potentially transformative cancer treatment modality. However, there are still many unknowns about the jet behavior that requires attention. In this paper, a helium CAP jet is tested in an electrostatic field generated by a copper ring. Using Rayleigh microwave scattering method, some delays of the electron density peaks for different ring potentials are observed. Meanwhile, a similar phenomenon associated with the bullet velocity is found. Chemical species distribution along the jet is analyzed based on the jet optical emission spectra. The spectra indicate that a lower ring potential, i.e., lower DC background electric field, can increase the amount of excited N2, N2+, He, and O in the region before the ring, but can decrease the amount of excited NO and HO almost along the entire jet. Combining all the results above, we discovered that an extra DC potential mainly affects the temporal plasma jet properties. Also, it is possible to manipulate the chemical compositions of the jet using a ring with certain electric potentials.

  18. Optimum temperature on corrosion resistance for plasma ion nitrided 316L stainless steel in sea water solution

    NASA Astrophysics Data System (ADS)

    Chong, Sang-Ok; Kim, Seong-Jong

    2017-01-01

    The aim of this research is to investigate the optimum plasma ion nitriding temperature on corrosion resistance in natural sea water for plasma ion nitrided 316L stainless steel. Plasma ion nitriding was conducted at different temperatures of 350, 400, 450, and 500 °C with a mixture of 75% of nitrogen and 25% of hydrogen during 10 h. In conclusion of anodic polarization test, a wide passive potential region and a high corrosion potential were observed at a plasma ion nitriding temperature of 450 °C. Moreover, relatively less damage depth and clean surface micrographs were observed at 450 °C as results of observation of three-dimensional (3D) microscope and scanning electron microscope (SEM) after polarization experiments. In addition, higher corrosion potential and lower corrosion current density were indicated at plasma ion nitrided samples than the value of untreated substrate after Tafel analysis. Hence, plasma ion nitrided at 450 °C in sea water solution represented optimum corrosion resistance among the all the plasma ion nitriding temperature parameters.

  19. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Martens, V. Ya; Lisitsyn, S. V.

    2015-11-01

    Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250 °C and 280 °C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.

  20. Experimental and numerical study on plasma nitriding of AISI P20 mold steel

    NASA Astrophysics Data System (ADS)

    Nayebpashaee, N.; Vafaeenezhad, H.; Kheirandish, Sh.; Soltanieh, M.

    2016-09-01

    In this study, plasma nitriding was used to fabricate a hard protective layer on AISI P20 steel, at three process temperatures (450°C, 500°C, and 550°C) and over a range of time periods (2.5, 5, 7.5, and 10 h), and at a fixed gas N2:H2 ratio of 75vol%:25vol%. The morphology of samples was studied using optical microscopy and scanning electron microscopy, and the formed phase of each sample was determined by X-ray diffraction. The elemental depth profile was measured by energy dispersive X-ray spectroscopy, wavelength dispersive spectroscopy, and glow dispersive spectroscopy. The hardness profile of the samples was identified, and the microhardness profile from the surface to the sample center was recorded. The results show that ɛ-nitride is the dominant species after carrying out plasma nitriding in all strategies and that the plasma nitriding process improves the hardness up to more than three times. It is found that as the time and temperature of the process increase, the hardness and hardness depth of the diffusion zone considerably increase. Furthermore, artificial neural networks were used to predict the effects of operational parameters on the mechanical properties of plastic mold steel. The plasma temperature, running time of imposition, and target distance to the sample surface were all used as network inputs; Vickers hardness measurements were given as the output of the model. The model accurately reproduced the experimental outcomes under different operational conditions; therefore, it can be used in the effective simulation of the plasma nitriding process in AISI P20 steel.

  1. Deposition of titanium nitride and hydroxyapatite-based biocompatible composite by reactive plasma spraying

    NASA Astrophysics Data System (ADS)

    Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Dragoş, Uţu

    2012-02-01

    Titanium nitride is a bioceramic material successfully used for covering medical implants due to the high hardness meaning good wear resistance. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. The paper presents the experimental results in obtaining composite layers of titanium nitride and hydroxyapatite by reactive plasma spraying in ambient atmosphere. X-ray diffraction analysis shows that in both cases of powders mixtures used (10% HA + 90% Ti; 25% HA + 75% Ti), hydroxyapatite decomposition occurred; in variant 1 the decomposition is higher compared with the second variant. Microstructure of the deposited layers was investigated using scanning electron microscope, the surfaces presenting a lamellar morphology without defects such as cracks or microcracks. Surface roughness values obtained vary as function of the spraying distance, presenting higher values at lower thermal spraying distances.

  2. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    NASA Astrophysics Data System (ADS)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  3. Scaled-Up Nonequilibrium Air Plasmas Generated by DC and Pulsed Discharges

    DTIC Science & Technology

    2010-09-08

    scalability of nonequilibrium plasmas produced by electrical discharges in atmospheric pressure air. Both DC and repetitively pulsed discharges ...Key results demonstrate that both DC glow discharge and pulsed transient spark generate air plasmas of required parameters. Glow discharge is easier...Corona discharge as a temperature probe was developed to diagnose the microwave torch preheated air. A new concept of the DC-driven pulsed

  4. Surface modification of 30CrNiMo8 low-alloy steel by active screen setup and conventional plasma nitriding methods

    NASA Astrophysics Data System (ADS)

    Ahangarani, Sh.; Sabour, A. R.; Mahboubi, F.

    2007-12-01

    In this paper, we report on a comparative study of active screen plasma nitriding (ASPN) and conventional dc plasma nitriding (CPN) behavior of 30CrNiMo8 low-alloy steel that has been examined under various process conditions. The process variables included active screen setup parameters (screen and iron plate top lids placed on the screen setup with 8 mm of hole size), treatment temperature (550 and 580 °C), gas mixture (75/25 and 25/75 of N 2/H 2) and treatment time (5 and 10 h) in 500 Pa pressure. The structure and phases composition of the diffusion zone and compound layer were studied by X-ray diffraction (XRD), microhardness tests, light optical microscopy and scanning electron microscopy (SEM). It was observed that treated sample surfaces in both CPN and ASPN methods consist of γ' and ɛ phases, and while the nitriding time and/or temperature increases, the intensity of ɛ phase in the compound layer will increase for ASPN and decrease for CPN method. Results show that the amount of nitrogen transferred from holes of screen toward the sample surface via sputtering and re-condensation mechanism can be affected due to the hardness and thickness of the layer.

  5. Some Temperature Effects on AISI-304 Nitriding in an Inductively Coupled RF Plasma

    SciTech Connect

    Valencia-Alvarado, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.; Munoz-Castro, A. E.; Piedad-Beneitez, A. de la; Rosa-Vazquez, J. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.

    2006-12-04

    Some recent results obtained from nitriding AISI 304 stainless steel samples, 1.2 cm in diameter and 0.5 cm thick are reported here in the case of an 85% hydrogen and 15% nitrogen mixture work gas. The process was carried out from 300 to 400 W for (13.56 MHz) inductively coupled plasma within a 60 cm long pyrex glass tube 3.5 cm in diameter where the samples were biased up to -300 V with respect to earth. The resulting hardness appears to be a function of the substrate temperature which varied from 200 deg. C at a 0 V bias to 550 deg. C at -300 V. The plasma density at 400 W reached 3x1010 cm-3 with a 4 eV electron temperature. Prior to nitriding, all the samples were polished with 0.05 {mu}m diamond paste, leading to a 30 nm average roughness (Ra). After nitriding at -300 V, the Ra rose until {approx}400 nm while hardness values of 1500 HV under 300 g loads were measured. X ray diffraction indicates that the extended phase amplitude ({gamma}N), Fe and Cr nitride depends on the substrate temperature.

  6. PIC/MCC simulation for magnetized capacitively coupled plasmas driven by combined dc/rf sources

    NASA Astrophysics Data System (ADS)

    Yang, Shali; Zhang, Ya; Jiang, Wei; Wang, Hongyu; Wang, Shuai

    2016-09-01

    Hybrid dc/rf capacitively coupled plasma (CCP) sources have been popular in substrate etching due to their simplicity in the device structure and better plasma property. In this work, the characteristics of magnetized capacitively coupled plasmas driven by combined dc/rf sources are described by a one-dimensional Particle-in-cell/Monte Carlo collision (PIC/MCC) model. The simulation is using a rf source of 13.56MHz in argon and at a low pressure of 50mTorr. The effects of dc voltage and magnetic field on the plasmas are examined for 200-400V and 0-200Gs. It is found that, to some extent, dc voltage will increase the plasma density, but plasma density drops with increasing dc voltage. The magnetic field will enhance the plasma density significantly, due to the magnetic field will increase the electron life time and decrease the loss to the electrodes. In the bulk plasma, electron temperature is increased with the magnetic field but decreased with the dc voltage. The electron temperature in sheath is higher than in bulk plasma, due to stochastic heating in sheath is greater than Ohmic heating in bulk plasma under low gas pressure. National Natural Science Foundation of China (11405067, 11105057, 11305032, 11275039).

  7. Effect of gas composition on corrosion behavior and growth of apatite on plasma nitrided titanium alloy Beta-21S

    NASA Astrophysics Data System (ADS)

    Mohan, L.; Anandan, C.

    2013-03-01

    Titanium alloy beta 21S with composition Ti-15Mo-3Nb-3Al-0.2Si was plasma nitrided using inductively coupled RF Plasma with 100% N2 and 80% N2-20% H2 at 800 °C for 4 h. XRD and micro Raman studies show the formation of titanium nitrides. Potentiodynamic polarization studies in Hank's solution show the corrosion resistance of the 80-20% (N2-H2) treated samples to be better than the 100% N2 treated samples. However, untreated samples show better corrosion resistance than the treated samples. Electrochemical impedance spectroscopy (EIS) studies show higher charge transfer resistance and lower double layer capacitance for the substrate compared to the nitrided samples. FESEM images of samples immersed in SBF show that growth of apatite is more and the size of deposits are larger on nitrided samples, especially on those nitrided with hydrogen dilution, as compared to that on the untreated substrate. EDS results show a decrease in nitrogen content and increase in oxygen content after corrosion experiments. XPS spectra from the nitrided and corrosion tested samples show the presence of oxide, nitride and oxynitride on the surface and after corrosion studies the samples are covered with oxide. Nitrided samples immersed in Hank's solution for one day show higher amount of calcium, phosphorous and oxygen in hydroxide form than the substrate.

  8. Structure and properties of commercially pure titanium nitrided in the plasma of a low-pressure gas discharge produced by a PINK plasma generator

    NASA Astrophysics Data System (ADS)

    Ivanov, Yu F.; Akhmadeev, Yu H.; Lopatin, I. V.; Petrikova, E. A.; Krysina, V.; Koval, N. N.

    2015-11-01

    The paper analyzes the surface structure and properties of commercially pure VT1-0 titanium nitrided in the plasma of a low-pressure gas discharge produced by a PINK plasma generator. The analysis demonstrates that the friction coefficient of the nitrided material decreases more than four times and its wear resistance and microhardness increases more than eight and three times, respectively. The physical mechanisms responsible for the enhancement of strength and tribological properties of the material are discussed.

  9. Reactive spark plasma sintering (SPS) of nitride reinforced titanium alloy composites

    SciTech Connect

    Borkar, Tushar; Nag, Soumya; Ren, Yang; Tiley, Jaimie; Banerjee, Rajarshi

    2014-12-25

    Coupled in situ alloying and nitridation of titanium–vanadium alloys, has been achieved by introducing reactive nitrogen gas during the spark plasma sintering (SPS) of blended titanium and vanadium elemental powders, leading to a new class of nitride reinforced titanium alloy composites. The resulting microstructure includes precipitates of the d-TiN phase with the NaCl structure, equiaxed (or globular) precipitates of a nitrogen enriched hcp a(Ti,N) phase with a c/a ratio more than what is expected for pure hcp Ti, and fine scale plate-shaped precipitates of hcp a-Ti, distributed within a bcc b matrix. During SPS processing, the d-TiN phase appears to form at a temperature of 1400 C, while only hcp a(Ti,N) and a-Ti phases form at lower processing temperatures. Consequently, the highest microhardness is exhibited by the composite processed at 1400 C while those processed at 1300 C or below exhibit lower values. Processing at temperatures below 1300 C, resulted in an incomplete alloying of the blend of titanium and vanadium powders. These d-TiN precipitates act as heterogeneous nucleation sites for the a(Ti,N) precipitates that appear to engulf and exhibit an orientation relationship with the nitride phase at the center. Furthermore, fine scale a-Ti plates are precipitated within the nitride precipitates, presumably resulting from the retrograde solubility of nitrogen in titanium.

  10. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    SciTech Connect

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  11. Melting and spheroidization of hexagonal boron nitride in a microwave-powered, atmospheric pressure nitrogen plasma `

    SciTech Connect

    Gleiman, S. S.; Phillips, J.

    2001-01-01

    We have developed a method for producing spherically-shaped, hexagonal phase boron nitride (hBN) particles of controlled diameter in the 10-100 micron size range. Specifically, platelet-shaped hBN particles are passed as an aerosol through a microwave-generated, atmospheric pressure, nitrogen plasma. In the plasma, agglomerates formed by collisions between input hBN particles, melt and forms spheres. We postulate that this unprecedented process takes place in the unique environment of a plasma containing a high N-atom concentration, because in such an environment the decomposition temperature can be raised above the melting temperature. Indeed, given the following relationship [1]: BN{sub (condensed)} {leftrightarrow} B{sub (gas)} + N{sub (gas)}. Standard equilibrium thermodynamics indicate that the decomposition temperature of hBN is increased in the presence of high concentrations of N atoms. We postulate that in our plasma system the N atom concentration is high enough to raise the decomposition temperature above the (undetermined) melting temperature. Keywords Microwave plasma, boron nitride, melting, spherical, thermodynamics, integrated circuit package.

  12. Manual modification and plasma exposure of boron nitride ceramic to study Hall effect thruster plasma channel material erosion

    NASA Astrophysics Data System (ADS)

    Satonik, Alexander J.

    Worn Hall effect thrusters (HET) show a variety of unique microstructures and elemental compositions in the boron nitride thruster channel walls. Worn thruster channels are typically created by running test thrusters in vacuum chambers for hundreds of hours. Studies were undertaken to manually modify samples of boron nitride without the use of a hall effect thruster. Samples were manually abraded with an abrasive blaster and sandpaper, in addition to a vacuum heater. Some of these samples were further exposed to a xenon plasma in a magnetron sputter device. Sandpaper and abrasive blaster tests were used to modify surface roughness values of the samples from 10,000 A to 150,000 A, matching worn thruster values. Vacuum heat treatments were performed on samples. These treatments showed the ability to modify chemical compositions of boron nitride samples, but not in a manner matching changes seen in worn thruster channels. Plasma erosion rate was shown to depend on the grade of the BN ceramic and the preparation of the surface prior to plasma exposure. Abraded samples were shown to erode 43% more than their pristine counterparts. Unique surface features and elemental compositions on the worn thruster channel samples were overwritten by new surface features on the ceramic grains. The microscope images of the ceramic surface show that the magnetron plasma source rounded the edges of the ceramic grains to closely match the worn HET surface. This effect was not as pronounced in studies of ion beam bombardment of the surface and appears to be a result of the quasi-neutral plasma environment.

  13. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    PubMed

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  14. Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Triplett, G. E., Jr.; Durbin, S. M.

    2004-01-01

    The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

  15. Study of the Characteristics of DC and ICP Hybrid Discharge Plasmas

    NASA Astrophysics Data System (ADS)

    WANG, Zhan; GAO, Wei; ZHANG, Peng; YAN, Huijie; REN, Chunsheng

    2015-03-01

    In this paper, the double-discharge plasma generated by radio frequency (RF) and direct current (DC) has been investigated. In comparison with their single-frequency counterpart, the interaction between the two excitations is significant and beneficial. The results show that the RF discharge can effectively increase the DC discharge current and decrease the DC voltage; meanwhile the DC discharge is favorable to feed abundant high energy seed electrons to the ICP discharge sustaining at 13.56 MHz for the latter to acquire higher plasma density and lower plasma potential by increasing the ionization rate. The innovative design has been demonstrated to facilitate more homogeneous performance with higher plasma density. supported by National Natural Science Foundation of China (No. 11475038)

  16. Direct synthesis of metal nitride by CO2 or XeCl laser plasma

    NASA Astrophysics Data System (ADS)

    Boulmer-Leborgne, Chantal; Thomann, A. L.; Hermann, Joerg

    1994-09-01

    The present work deals with a new nitriding method applied to titanium: the Ti surface nitriding is carried out by direct laser irradiation in the presence of ambient nitrogen. The experimental procedure is performed in a chamber containing N2 gas, allowing plasma study by emission spectroscopy. Two pulsed laser types are used, a TEA-CO2 ((lambda) equals 10.6 micrometers ) and a XeCl excimer ((lambda) equals 308 nm) in order to compare the laser- material coupling influence on the layer synthesis process. The laser beam is focused perpendicularly to the Ti samples. Different experimental conditions are achieved to investigate the influence of laser and gas parameters on the process. Using the CO2 laser, a N2 plasma is created on the Ti surface. With the XeCl excimer laser, a Ti plasma on the sample appears. After treatment, the surface state of the samples is studied and chemical analysis of the targets are carried out. The TiN synthesis is evidenced. Presence of oxinitride in the compound and native surface oxygen reduction by hydrogen plasma are examined.

  17. Dynamics of runaway tails with time-dependent sub-Dreicer dc fields in magnetized plasmas

    NASA Technical Reports Server (NTRS)

    Moghaddam-Taaheri, E.; Vlahos, L.

    1987-01-01

    The evolution of runaway tails driven by sub-Dreicer time-dependent dc fields in a magnetized plasma are studied numerically using a quasi-linear code based on the Ritz-Galerkin method and finite elements. It is found that the runaway tail maintained a negative slope during the dc field increase. Depending on the values of the dc electric field at t = 0 and the electron gyrofrequency to the plasma frequency ratio the runaway tail became unstable to the anomalous Doppler resonance or remained stable before the saturation of the dc field at some maximum value. The systems that remained stable during this stage became unstable to the anomalous Doppler or the Cerenkov resonances when the dc field was kept at the saturation level or decreased. Once the instability is triggered, the runaway tail is isotropized.

  18. Dynamics of runaway tails with time-dependent sub-Dreicer dc fields in magnetized plasmas

    SciTech Connect

    Moghaddam-Taaheri, E.; Vlahos, L.

    1987-10-01

    The evolution of runaway tails driven by sub-Dreicer time-dependent dc fields in a magnetized plasma are studied numerically using a quasilinear code based on the Ritz--Galerkin method and finite elements. It is found that the runaway tail maintained a negative slope during the dc field increase. Depending on the values of the dc electric field at t = 0 and the electron gyrofrequency to the plasma frequency ratio the runaway tail became unstable to the anomalous Doppler resonance or remained stable before the saturation of the dc field at some maximum value. The systems that remained stable during this stage became unstable to the anomalous Doppler or the C-hacekerenkov resonances when the dc field was kept at the saturation level or decreased. Once the instability is triggered, the runaway tail is isotropized.

  19. Modification of Low-Alloy Steel Surface by Plasma Electrolytic Nitriding

    NASA Astrophysics Data System (ADS)

    Kusmanov, S. A.; Smirnov, A. A.; Silkin, S. A.; Belkin, P. N.

    2016-07-01

    The structure of the low-alloy steel after plasma electrolytic nitriding (PEN) in electrolyte containing ammonium nitrate was investigated. The cross-sectional microstructure, composition, and phase constituents of modified layer under different processing conditions were characterized. It is shown that anode PEN provides the saturation of steel with nitrogen and formation of α-Fe2O3, FeO, and Fe3O4 oxides, Fe2-3N nitride, and martensite. The aqueous solution that contained 15 wt.% NH4Cl and 5 wt.% NH4NO3 allows one to obtain the hardened layer with a thickness of 80 μm and a microhardness up to 740 HV during 5 min at 850 °C. Surface roughness decreases from 1.5 to 0.8 μm after 5-min PEN at 650 °C. The proposed electrolyte and processing mode (750 °C, 10 min) enable to obtain the decrease in the weight loss after lubricate wear testing by a factor of 2.7. The base-nitrate electrolyte conditioned a decrease in the corrosion current density by a factor of 9 due to passivating effect of the oxide and nitride of iron.

  20. Deposition of titanium nitride layers by electric arc - Reactive plasma spraying method

    NASA Astrophysics Data System (ADS)

    Şerban, Viorel-Aurel; Roşu, Radu Alexandru; Bucur, Alexandra Ioana; Pascu, Doru Romulus

    2013-01-01

    Titanium nitride (TiN) is a ceramic material which possesses high mechanical properties, being often used in order to cover cutting tools, thus increasing their lifetime, and also for covering components which are working in corrosive environments. The paper presents the experimental results on deposition of titanium nitride coatings by a new combined method (reactive plasma spraying and electric arc thermal spraying). In this way the advantages of each method in part are combined, obtaining improved quality coatings in the same time achieving high productivity. Commercially pure titanium wire and C45 steel as substrate were used for experiments. X-ray diffraction analysis shows that the deposited coatings are composed of titanium nitride (TiN, Ti2N) and small amounts of Ti3O. The microstructure of the deposited layers, investigated both by optical and scanning electron microscopy, shows that the coatings are dense, compact, without cracks and with low porosity. Vickers microhardness of the coatings presents maximum values of 912 HV0.1. The corrosion tests in 3%NaCl solution show that the deposited layers have a high corrosion resistance compared to unalloyed steel substrate.

  1. DC Plasma Synthesis of Vertically Aligned Carbon Nanofibers for Biointerfacing

    NASA Astrophysics Data System (ADS)

    Pearce, Ryan Christopher

    Vertically aligned carbon nanofibers (VACNFs) are a class of materials whose nanoscale dimensions and physical properties makes them uniquely suitable as functional elements in many applications for biodetection and biointerfacing on a cellular level. Control of VACNF synthesis by catalytic plasma enhanced chemical vapor deposition (PECVD) presents many challenges in integration into devices and structures designed for biointerfacing, such as transparent or flexible substrates. This dissertation addresses ways to overcome many of these issues in addition to deepening the fundamental understanding of nano-synthesis in catalytic PECVD. First, a survey of the field of VACNF synthesis and biointerfacing is presented, identifying the present challenges and greatest experimental applications. It is followed by experimental observations that elucidate the underlying mechanism to fiber alignment during synthesis, a critical step for deterministic control of fiber growth. Using a grid of electrodes patterned by photolithography on an insulating substrate, it was found that the alignment of the fibers is controlled by the anisotropic etching provided by ions during dc-PECVD synthesis. The VACNFs that have been utilized for many cellular interfacing experiments have unique mechanical and fluorescent properties due to a SiNx coating. The mechanism for SiNx deposition to VACNF sidewalls during synthesis is explored in addition to a detailed study of the optical properties of the coating. To explain the optical properties of this coating it is proposed that the source of photoluminescence for the SiNx coated VACNFs is quantum confinement effects due to the presence of silicon nanoclusters embedded in a Si3N4 matrix. These luminescent fibers have proven useful as registry markers in cell impalefection studies. To realize VACNF arrays used as an inflatable angioplasty balloon with embedded fibers to deliver drugs across the blood-brain barrier, a method for transferring fibers to

  2. Effects of ROS and RNS in non-equilibrium plasma enhanced oxidizing and nitriding

    NASA Astrophysics Data System (ADS)

    Datsyuk, Vitaly; Izmailov, Igor; Naumov, Vadym; Khomich, Vladimir; Tsiolko, Vyacheslav

    2016-09-01

    Plasma enhanced oxidizing and nitriding processes are of great interest for physics and applications. However, despite all advances in plasma technology, mechanisms of non-equilibrium plasma chemistry are not quite clear, particularly concerning reactive oxygen and nitrogen species (ROS/RNS) in metastable states. We tried to study this matter more detail. Experiments were done in a low temperature magnetron with a non-self-sustained glow discharge in oxygen/nitrogen/argon mixtures, employing electrical and optical diagnostics. Measurements showed that plasma processing is accompanied by the formation of electronically excited particles ROS/RNS. Computer modeling by using 0D-kinetic and 1D-fluid models including ionization, excitation, dissociation-recombination, vibrational relaxation, collisional quenching and radiation revealed the most probable mechanisms of plasma-chemical transformations. Effects of metastables of singlet oxygen O2*(a,b)and nitrogen N2*(A)as well as small but important radicals O*(1 D), N*(2 D) were also examined. Our study confirms the role of ROS/RNS in plasma kinetics and indicates the way toward more efficient oxygen and nitrogen plasma processing.

  3. The hairline plasma: An intermittent negative dc-corona discharge at atmospheric pressure for plasma medical applications

    SciTech Connect

    Bussiahn, R.; Brandenburg, R.; Gerling, T.; Kindel, E.; Lange, H.; Lembke, N.; Weltmann, K.-D.; Woedtke, Th. von; Kocher, T.

    2010-04-05

    A cold atmospheric pressure plasma source, called hairline plasma, for biological and medical applications has been developed. Using the physical effect of the negative dc corona discharge, a nanosecond pulsed microplasma has been created. The device produces a very thin (dapprox30 mum) plasma filament with a length of up to 1.5 cm. Due to this geometrical parameters this plasma is particularly suitable for the treatment of microscopic cavities. The low plasma temperature allows to treat the human skin without any heating or painful irritation.

  4. Investigation on Plasma Jet Flow Phenomena During DC Air Arc Motion in Bridge-Type Contacts

    NASA Astrophysics Data System (ADS)

    Zhai, Guofu; Bo, Kai; Chen, Mo; Zhou, Xue; Qiao, Xinlei

    2016-05-01

    Arc plasma jet flow in the air was investigated under a bridge-type contacts in a DC 270 V resistive circuit. We characterized the arc plasma jet flow appearance at different currents by using high-speed photography, and two polished contacts were used to search for the relationship between roughness and plasma jet flow. Then, to make the nature of arc plasma jet flow phenomena clear, a simplified model based on magnetohydrodynamic (MHD) theory was established and calculated. The simulated DC arc plasma was presented with the temperature distribution and the current density distribution. Furthermore, the calculated arc flow velocity field showed that the circular vortex was an embodiment of the arc plasma jet flow progress. The combined action of volume force and contact surface was the main reason of the arc jet flow. supported by National Natural Science Foundation of China (Nos. 51307030, 51277038)

  5. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  6. Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

    PubMed

    Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

    2008-08-18

    We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

  7. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  8. Inductively coupled plasma reactive ion etching of III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Shah, A. P.; Laskar, M. R.; Rahman, A. A.; Gokhale, M. R.; Bhattacharya, A.

    2013-02-01

    III-Nitride semiconductor materials are resistant to most wet chemical etch processes, and hence the only viable alternative is to use dry etching for device processing. However, the conventional Reactive Ion Etching (RIE) process results in very slow etch-rates because of low reactive ion density, and larger surface damage due to high energy ion bombardment. Using Inductively Coupled Plasma (ICP) RIE, a very fast etch-rate and smooth morphology is achieved due to independent control of ion density and ion energy. In this paper, we present our results on ICP-RIE of epitaxial III-N materials, namely c-plane and a-plane oriented GaN, AlN, AlxGa1-xN using various chlorine plasma chemistries based on Cl2 and BCl3. We have examined the role of BCl3 deoxidising pre-treatment on the etching of AlGaN alloys.

  9. Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

    NASA Astrophysics Data System (ADS)

    Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

    2011-07-01

    We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

  10. Synthesis of boron-nitride nanocages and fullerenes in a BN plasma

    NASA Astrophysics Data System (ADS)

    Krstic, Predrag; Han, Longtao

    2016-09-01

    Synthesis of boron-nitride fullerenes, nano-cocoons and nano-cages by self-organization of BN molecules in a high-temperature plasma is simulated using the DFT tight-binding method. No boron nano-cluster or catalysts nano-particle are needed to initiate this process. By varying the plasma temperature and the BN density, as well as the time of growth we can simulate growth of he sp2 cages of various shape, size and quality. Role of hydrogen in HBNH and H2BNH2 synthesis is also considered. This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  11. Submicrometre particle filtration with a dc activated plasma textile

    NASA Astrophysics Data System (ADS)

    Rasipuram, S. C.; Wu, M.; Kuznetsov, I. A.; Kuznetsov, A. V.; Levine, J. F.; Jasper, W. J.; Saveliev, A. V.

    2014-01-01

    Plasma textiles are novel fabrics incorporating the advantages of cold plasma and low-cost non-woven or woven textile fabrics. In plasma textiles, electrodes are integrated into the fabric, and a corona discharge is activated within and on the surface of the fabric by applying high voltages above 10 kV between the electrodes. When the plasma textile is activated, submicrometre particles approaching the textile are charged by the deposition of ions and electrons produced by the corona, and then collected by the textile material. A stable plasma discharge was experimentally verified on the surface of the textile that was locally smooth but not rigid. A filtration efficiency close to 100% was observed in experiments conducted on salt particles with diameters ranging from 50 to 300 nm. Unlike conventional fibrous filters, the plasma textile provided uniform filtration in this range, without exhibiting a maximum particle penetration size.

  12. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

    PubMed

    Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

    2015-09-09

    Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

  13. Comparison of pulsating DC and DC power air-water plasma jet: A method to decrease plume temperature and increase ROS

    NASA Astrophysics Data System (ADS)

    Liu, K.; Hu, H.; Lei, J.; Hu, Y.; Zheng, Z.

    2016-12-01

    Most air-water plasma jets are rich in hydroxyl radicals (•OH), but the plasma has higher temperatures, compared to that of pure gas, especially when using air as working gas. In this paper, pulsating direct current (PDC) power was used to excite the air-water plasma jet to reduce plume temperature. In addition to the temperature, other differences between PDC and DC plasma jets are not yet clear. Thus, comparative studies of those plasmas are performed to evaluate characteristics, such as breakdown voltage, temperature, and reactive oxygen species. The results show that the plume temperature of PDC plasma is roughly 5-10 °C lower than that of DC plasma in the same conditions. The •OH content of PDC is lower than that of DC plasma, whereas the O content of PDC plasma is higher. The addition of water leads in an increase in the plume temperature and in the production of •OH with two types of power supplies. The production of O inversely shows a declining tendency with higher water ratio. The most important finding is that the PDC plasma with 100% water ratio achieves lower temperature and more abundant production of •OH and O, compared with DC plasma with 0% water ratio.

  14. Formation of Expanded Austenite on a Cold-Sprayed AISI 316L Coating by Low-Temperature Plasma Nitriding

    NASA Astrophysics Data System (ADS)

    Adachi, Shinichiro; Ueda, Nobuhiro

    2015-12-01

    Low-temperature plasma nitriding at temperatures below 450 °C is commonly applied to austenitic stainless steels to enhance wear resistance, while maintaining corrosion resistance, by forming expanded austenite (known as the S-phase). In this work, low-temperature plasma nitriding of cold-sprayed AISI 316L coatings was examined. A cold-spray technique was developed to produce metal coatings with less oxidation. However, the cold-sprayed AISI 316L coating obtained by use of nitrogen gas as propellant contained many interconnected pores and cracks, and was, consequently, unsuitable as an anticorrosive coating. Therefore, laser post-treatment was used to modify the coating and increase its density to similar to that of bulk steel. The anticorrosive performance of this coating on a carbon steel substrate in NaCl solution was substantially improved. Subsequent low-temperature plasma nitriding enhanced the wear resistance by two orders of magnitude. It is concluded that cold-sprayed AISI 316L coatings treated by laser post-treatment and subsequent low-temperature plasma nitriding could be used as protective coatings under severe wear and corrosion conditions.

  15. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1988-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  16. Diagnostics of ballistic electrons in a DC/RF hybrid capacitively coupled plasma reactor

    NASA Astrophysics Data System (ADS)

    Xu, Lin; Chen, Lee; Ranjan, Alok; Funk, Merritt; Bravenec, Ron; Economou, Demetre; Donnelly, Vincent; Sundararajan, Radha

    2008-10-01

    The DC/RF hybrid is a capacitively coupled plasma etcher with RF voltage on the bottom electrode and negative DC bias on the upper electrode. This configuration can significantly alleviate the electron shading effect and preserve photoresist integrity during plasma etching. It is thought that a group of ballistic electrons is responsible for these results. These high-energy electrons start as secondaries emitted from the negatively-biased DC electrode and accelerate across the DC sheath. They acquire high enough energy in the sheath such that they can cross the bulk plasma without gas-phase collisions. The ballistic electrons either strike the RF electrode or are trapped in the plasma bulk depending on the RF phase. Two gridded energy analyzers mounted on the back of the RF electrode were used to determine the energy distribution of ballistic electrons. The dependence of the ballistic electron energy distribution on DC voltage, pressure and RF power will be presented and compared with simulation results.

  17. Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

    PubMed

    Vasquez, M R; Flauta, R E; Wada, M

    2008-02-01

    Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen (N(2)) plasma. In the simulation model, N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source.

  18. Co-deposition of titanium and iron nitrides on SS-321 by using plasma focus

    NASA Astrophysics Data System (ADS)

    Ahmad, R.; Hassan, M.; Murtaza, G.; Akhter, J. I.; Qayyum, A.; Waheed, A.; Zakaullah, M.

    2006-02-01

    This article reports the co-deposition process of TiN0.9 and (Fe,Cr)(2)N compounds on SS-321 substrate using a 2.3 kJ dense plasma focus device operated with N-2 discharges. X-ray diffraction analysis is performed to investigate the ion-induced changes in the near surface structure of the SS-321. Scanning electron microscopy with the energy dispersive X-ray spectroscopy is carried out to analyse the surface morphology and the elemental composition of the nitrided samples. The results reveal that at the low fluence of ion bombardment, a non-stoichiometric tertiary phase (Fe,Cr)(x)N is developed, which transforms into a stable stoichiometric compound (Fe,Cr)(2)N by increasing the ion flux. Some CrN precipitates are also observed because of the thermal effect produced by the bombardment of energetic ion beam. Vickers micro-hardness values are increased more than twice for typical ion nitrided samples.

  19. Previous heat treatment inducing different plasma nitriding behaviors in martensitic stainless steels

    SciTech Connect

    Figueroa, C. A.; Alvarez, F.; Mitchell, D. R. G.; Collins, G. A.; Short, K. T.

    2006-09-15

    In this work we report a study of the induced changes in structure and corrosion behavior of martensitic stainless steels nitrided by plasma immersion ion implantation (PI{sup 3}) at different previous heat treatments. The samples were characterized by x-ray diffraction and glancing angle x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and potentiodynamic measurements. Depending on the proportion of retained austenite in the unimplanted material, different phase transformations are obtained at lower and intermediate temperatures of nitrogen implantation. At higher temperatures, the great mobility of the chromium yields CrN segregations like spots in random distribution, and the {alpha}{sup '}-martensite is degraded to{alpha}-Fe (ferrite). The nitrided layer thickness follows a fairly linear relationship with the temperature and a parabolic law with the process time. The corrosion resistance depends strongly on chromium segregation from the martensitic matrix, as a result of the formation of CrN during the nitrogen implantation process and the formation of Cr{sub x}C during the heat treatment process. Briefly speaking, the best results are obtained using low tempering temperature and low implantation temperature (below 375 deg. ) due to the increment of the corrosion resistance and nitrogen dissolution in the structure with not too high diffusion depths (about 5-10 {mu}m)

  20. Radio Frequency Plasma Synthesis of Boron Nitride Nanotubes (BNNTs) for Structural Applications: Part I

    NASA Technical Reports Server (NTRS)

    Hales, Stephen J.; Alexa, Joel A.; Jensen, Brian J.; Thomsen, Donald L.

    2016-01-01

    It is evident that nanotubes, such as carbon, boron nitride and even silicon, offer great potential for many aerospace applications. The opportunity exists to harness the extremely high strength and stiffness exhibited by high-purity, low-defect nanotubes in structural materials. Even though the technology associated with carbon nanotube (CNT) development is mature, the mechanical property benefits have yet to be fully realized. Boron nitride nanotubes (BNNTs) offer similar structural benefits, but exhibit superior chemical and thermal stability. A broader range of potential structural applications results, particularly as reinforcing agents for metal- and ceramic- based composites. However, synthesis of BNNTs is more challenging than CNTs mainly because of the higher processing temperatures required, and mass production techniques have yet to emerge. A promising technique is radio frequency plasma spray (RFPS), which is an inductively coupled, very high temperature process. The lack of electrodes and the self- contained, inert gas environment lend themselves to an ultraclean product. It is the aim of this White Paper to survey the state of the art with regard to nano-material production by analyzing the pros and cons of existing methods. The intention is to combine the best concepts and apply the NASA Langley Research Center (LaRC) RFPS facility to reliably synthesize large quantities of consistent, high-purity BNNTs.

  1. Experimental and theoretical study on interaction between lanthanum and nitrogen during plasma rare earth nitriding

    NASA Astrophysics Data System (ADS)

    Zhang, C. S.; Yan, M. F.; Sun, Z.

    2013-12-01

    In present work, the interaction between lanthanum (La) and nitrogen (N) during plasma rare earth nitriding of M50NiL martensitic steel is analyzed. Phase compositions, elemental contents as well as microhardness profiles of surface layers are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and microhardness tester to observe the changes of the N contents in treated layers. The results of microhardness, XRD and EDS indicate that the addition of pure La can speed up the denitriding rate compared with the case without La addition. The XPS results reveal that the presence of the Lasbnd O and Lasbnd N bond reduces the peak intensity of the Mesbnd N bond, which indicates that the addition of La element can reduce the N contents in nitrided layers through the surface oxidation and the attraction of La atoms. The theoretical thermodynamic calculations are employed to further clarify the denitriding function of the surface oxidation and the attraction between La and N atoms.

  2. Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

    SciTech Connect

    Okada, H.; Kato, M.; Ishimaru, T.; Sekiguchi, H.; Wakahara, A.; Furukawa, M.

    2014-02-20

    Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

  3. Thermal relaxation of a two dimensional plasma in a dc magnetic field. Part 2: Numerical simulation

    NASA Technical Reports Server (NTRS)

    Hsu, J. Y.; Joyce, G.; Montgomery, D.

    1974-01-01

    The thermal relaxation process for a spatially uniform two dimensional plasma in a uniform dc magnetic field is simulated numerically. Thermal relaxation times are defined in terms of the time necessary for the numerically computer Boltzman H-function to decrease through a given part of the distance to its minimum value. Dependence of relaxation time on two parameters is studied: number of particles per Debye square and ratio of gyrofrequency to plasma frequency.

  4. Experimental and modelling study of the plasma vapour-phase synthesis of ultrafine aluminum nitride powders

    NASA Astrophysics Data System (ADS)

    da Cruz, Antonio-Carlos

    An experimental and theoretical study of the fundamentals of the vapour phase synthesis of ultrafine aluminum nitride (AIN) particles using thermal plasma was carried out. The study used the concept of a transferred-arc reactor which produces AlN ultrafine powders in two stages: evaporation of aluminum (Al) metal by the transferred-arc in non nitriding conditions; and the reaction between Al vapour and ammonia (NH3) in a separate tubular reactor. A new version of this reactor concept was built in which the transferred-arc chamber and tubular reactor were vertically aligned. This reactor design allowed the study of both radial and axial mixing of ammonia with the plasma chamber off-gas. Ultrafine powders with a specific surface area (SSA) in the range of 38--270 m2/g were produced in two plasma chamber off-gas temperature levels (1800 and 2000 K), with different quenching intensities, and two different plasma gas compositions (pure Ar and Ar/H2 mixture). The dependence of the particle size and composition on the reactor operating conditions was investigated. Depending on the plasma gas composition, two different trends were observed for the SSA as a function of quenching intensity, with the radial injection of NH3. A two-dimensional numerical model was developed for the nucleation and growth of ultrafine particles in this system, using the method of moments. A new equation for the nucleation rate for the AlN system was developed. This equation considers the effect of reaction on the surface of clusters of the new phase. This new modelling approach could explain the trends observed experimentally. The importance of the mechanisms for the gas-to-condensed phase transition in the AlN system were examined. The sinterability of the powder produced was examined. Sintering to full density was achieved at 1550°C. Because of the high oxygen content of the powder, a second phase identified as aluminum oxynitride (ALON) was observed to form.

  5. Thermal plasma treatment of stormwater sediments: comparison between DC non-transferred and partially transferred arc plasma.

    PubMed

    Li, O L; Guo, Y; Chang, J S; Saito, N

    2015-01-01

    The disposal of enormous amount of stormwater sediments becomes an emerging worldwide problem. Stormwater sediments are contaminated by heavy metals, phosphorus, trace organic and hydrocarbons, and cannot be disposed without treatment. Thermal plasma decontamination technology offers a high decomposition rate in a wide range of toxic organic compound and immobilization of heavy metal. In this study, we compared the treatment results between two different modes of thermal plasma: (1) a non-transferred direct current (DC) mode and (2) a partial DC-transferred mode. The reductions of total organic carbon (TOC) were, respectively, 25% and 80% for non-transferred and partially transferred plasma, respectively. Most of the toxic organic compounds were converted majorly to CxHy. In the gaseous emission, the accumulated CxHy, CO, NO and H2S were significantly higher in partially transferred mode than in non-transferred mode. The solid analysis demonstrated that the concentrations of Ca and Fe were enriched by 500% and 40%, respectively. New chemical compositions such as KAlSi3O8, Fe3O4, NaCl and CaSO4 were formed after treatment in partially DC-transferred mode. The power inputs were 1 and 10 kW, respectively, for non-transferred DC mode and a partially DC-transferred mode. With a lower energy input, non-transferred plasma treatment can be used for decontamination of sediments with low TOC and metal concentration. Meanwhile, partially transferred thermal plasma with higher energy input is suitable for treating sediments with high TOC percentage and volatile metal concentration. The organic compounds are converted into valuable gaseous products which can be recycled as an energy source.

  6. Experimental tests for carbon nanomaterial synthesis using DC plasma jet

    NASA Astrophysics Data System (ADS)

    Lange, H.; Łabȩdź, O.; Tylska, I.; Huczko, A.; Bystrzejewski, M.

    2014-11-01

    In the frame of this work some experimental tests were performed in the plasma jet. Pure ethanol vapour alone or with the addition of fine iron powder were used to synthesize few-layer graphene or carbon-encapsulated iron nanoparticles, respectively.

  7. Hot Plasma from Solar Active Region Cores: a Test of AC and DC Coronal Heating Models?

    NASA Astrophysics Data System (ADS)

    Schmelz, J. T.; Asgari-Targhi, M.; Christian, G. M.; Dhaliwal, R. S.; Pathak, S.

    2015-06-01

    Direct current (DC) models of solar coronal heating invoke magnetic reconnection to convert magnetic free energy into heat, whereas alternating current (AC) models invoke wave dissipation. In both cases the energy is supplied by photospheric footpoint motions. For a given footpoint velocity amplitude, DC models predict lower average heating rates but greater temperature variability when compared to AC models. Therefore, evidence of hot plasma (T > 5 MK) in the cores of active regions could be one of the ways for current observations to distinguish between AC and DC models. We have analyzed data from the X-Ray Telescope (XRT) and the Atmospheric Imaging Assembly for 12 quiescent active region cores, all of which were observed in the XRT Be_thick channel. We did Differential Emission Measure (DEM) analysis and achieved good fits for each data set. We then artificially truncated the hot plasma of the DEM model at 5 MK and examined the resulting fits to the data. For some regions in our sample, the XRT intensities continued to be well-matched by the DEM predictions, even without the hot plasma. This truncation, however, resulted in unacceptable fits for the other regions. This result indicates that the hot plasma is present in these regions, even if the precise DEM distribution cannot be determined with the data available. We conclude that reconnection may be heating the hot plasma component of these active regions.

  8. HOT PLASMA FROM SOLAR ACTIVE REGION CORES: A TEST OF AC AND DC CORONAL HEATING MODELS?

    SciTech Connect

    Schmelz, J. T.; Christian, G. M.; Dhaliwal, R. S.; Pathak, S.; Asgari-Targhi, M.

    2015-06-20

    Direct current (DC) models of solar coronal heating invoke magnetic reconnection to convert magnetic free energy into heat, whereas alternating current (AC) models invoke wave dissipation. In both cases the energy is supplied by photospheric footpoint motions. For a given footpoint velocity amplitude, DC models predict lower average heating rates but greater temperature variability when compared to AC models. Therefore, evidence of hot plasma (T > 5 MK) in the cores of active regions could be one of the ways for current observations to distinguish between AC and DC models. We have analyzed data from the X-Ray Telescope (XRT) and the Atmospheric Imaging Assembly for 12 quiescent active region cores, all of which were observed in the XRT Be-thick channel. We did Differential Emission Measure (DEM) analysis and achieved good fits for each data set. We then artificially truncated the hot plasma of the DEM model at 5 MK and examined the resulting fits to the data. For some regions in our sample, the XRT intensities continued to be well-matched by the DEM predictions, even without the hot plasma. This truncation, however, resulted in unacceptable fits for the other regions. This result indicates that the hot plasma is present in these regions, even if the precise DEM distribution cannot be determined with the data available. We conclude that reconnection may be heating the hot plasma component of these active regions.

  9. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOEpatents

    Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  10. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOEpatents

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  11. Synthesis of Nanosized Titanium Oxide and Nitride Through Vacuum Arc Plasma Expansion Technique

    NASA Astrophysics Data System (ADS)

    Lepeshev, A. A.; Karpov, I. V.; Ushakov, A. V.; Fedorov, L. Yu.; Shaihadinov, A. A.

    2016-12-01

    Physical vapor deposition techniques such vacuum arc plasma deposition — which are very commonly used in thin film technology — appear to hold much promise for the synthesis of nanocrystalline thin films as well as nanoparticles. Monodisperse and spherical titanium oxide (TiO2) and nitride nanoparticles were produced at room temperature as a cluster beam in the gas phase using a cluster-deposition source. Using the basic principles of the gas condensation method, this study has developed vacuum arc nanoparticle synthesis system. We demonstrate that major process deposition parameter is the pressure in the plasma chamber. This is the major advantage of these techniques over thermal evaporation. Our method affords TiN powders with high specific surface areas exceeding 200m2g-1. TEM micrograph of TiO2 nanoparticles prepared at an oxygen pressure of 60Pa show an average particle size of 6nm. TiO2 nanoparticles prepared at an oxygen pressure of 70Pa were observed to not have a reduced average particle size.

  12. Experiment planning, mathematical modelling, and nonlinear optimization of the ion-nitriding process in a glow-discharge plasma

    SciTech Connect

    Petros, O.; Kuhn, S.; Popa, G.

    1982-06-01

    A new, efficient method for investigating and optimizing the ion-nitriding process in a glow-discharge plasma is proposed and worked out in detail for the mass kinetics of Rp-3 steel. This method, which is based on the concepts of experiment planning, mathematical modelling, and nonlinear optimization, is quite general and potentially applicable to a wide class of technological and other processes depending on several parameters.

  13. Simulation Study of an Extended Density DC Glow Toroidal Plasma Source

    SciTech Connect

    Granda-Gutierrez, E. E.; Piedad-Beneitez, A. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.; Benitez-Read, J. S.; Pacheco-Sotelo, J. O.; Pena-Eguiluz, R.; Mercado-Cabrera, A.; Valencia A, R.; Barocio, S. R.

    2006-12-04

    Conventional wisdom assigns the DC glow discharge regime to plasma currents below {approx}500 mA values, beyond which the discharge falls into the anomalous glow and the turbulent arc regimes. However, we have found evidence that, during toroidal discharges, this barrier can be ostensibly extended up to 800 mA. Thus, a computer simulation has been applied to the evolution of the main electrical characteristics of such a glow discharge plasma in a toroidal vessel in order to design and construct a respective voltage/current controlled source. This should be able to generate a DC plasma in the glow regime with which currents in the range 10-3-100 A can be experimented and 109-1010 cm-3 plasma densities can be achieved to PIII optimization purposes. The plasma is modelled as a voltage-controlled current source able to be turned on whenever the breakdown voltage is reached across the gap between the anode and the vessel wall. The simulation outcome fits well our experimental measurements showing that the plasma current obeys power laws that are dependent on the power current and other control variables such as the gas pressure.

  14. Reactive Plasma-Sprayed Aluminum Nitride-Based Coating Thermal Conductivity

    NASA Astrophysics Data System (ADS)

    Shahien, Mohammed; Yamada, Motohiro; Fukumoto, Masahiro; Egota, Kazumi; Okamoto, Kenji

    2015-12-01

    Recently, thick aluminum nitride/alumina (AlN/Al2O3) composite coatings were successfully fabricated through the reactive plasma spraying of fine Al2O3/AlN mixture in the N2/H2 atmospheric plasma. The coatings consist of AlN, Al5O6N, γ-Al2O3, and α-Al2O3 phases. This study will evaluate the thermal conductivity of these complicated plasma-sprayed coatings and optimize the controlling aspects. Furthermore, the influence of the process parameters on the coatings thermal conductivity will be investigated. The fabricated coatings showed very low thermal conductivity (2.43 W/m K) compared to the AlN sintered compacts. It is attributed to the phase composition of the fabricated coatings, oxide content, and porosity. The presence of Al2O3, Al5O6N and the high coating porosity decreased its thermal conductivity. The presence of oxygen in the AlN lattice creates Al vacancies which lead to phonon scattering and therefore suppressed the thermal conductivity. The formation of γ-Al2O3 phase in the coating leads to further decrease in its conductivity, due to its lower density compared to the α-phase. Moreover, the high porosity of the coating strongly suppressed the conductivity. This is due to the complicated microstructure of plasma spray coatings (splats, porosity, and interfaces, particularly in case of reactive spray process), which obviously lowered the conductivity. Furthermore, the measured coating density was lower than the AlN value and suppressed the coating conductivity. In addition, the spraying parameter showed a varied effect on the coating phase composition, porosity, density, and therefore on its conductivity. Although the N2 gas flow improved the nitride content, it suppressed the thermal conductivity gradually. It is attributed to the further increase in the porosity and further decrease in the density of the coatings with the N2 gas. Furthermore, increasing the arc did not show a significant change on the coating thermal conductivity. On the other hand

  15. Numerical characterization of magnetized capacitively coupled argon plasmas driven by combined dc/rf sources

    NASA Astrophysics Data System (ADS)

    Yang, Shali; Zhang, Ya; Wang, Hong-Yu; Wang, Shuai; Jiang, Wei

    2017-03-01

    The characteristics of magnetized capacitively coupled plasmas (CCPs) driven by combined dc/rf sources in argon have been investigated by a one-dimensional implicit Particle-in-cell/Monte Carlo collision model. Discharges operating at 13.56 MHz with a fixed rf voltage of 300 V are simulated at the pressure of 50 mTorr in argon. Four cases, i.e., CCP driven by rf source, rf + dc sources, rf source with magnetic field, and rf + dc sources with magnetic field, are presented and compared at the Vdc = -100 V, B = 50 Gs, and γi = 0.2. It is found that, with the influence of dc voltage and magnetic field, the plasma density has been greatly enhanced by over one order of magnitude over the rf-only case. This is due to the fact that the mean free path of electrons decreases by the cyclotron motion and the energetic secondary electrons are trapped by the magnetic field, leading to a significant increase in heating and ionization rates. Moreover, transition of the stochastic to Ohmic electron heating mechanism takes place as the magnetic field increases because electron kinetics can be strongly affected by the magnetic field. In general, we have demonstrated that such a configuration will enhance the discharge and thus enable CCPs work under extremely high energy density stably that can never be operated by any other configurations. We expect that such a configuration can promote many related applications, like etching, sputtering, and deposition.

  16. Pulsed DC discharge for synthesis of conjugated plasma polymerized aniline thin film

    NASA Astrophysics Data System (ADS)

    Barman, Tapan; Pal, Arup R.

    2012-10-01

    The polymerization of aniline in pulsed dc plasma is studied and the effects of variation of pressure, power, frequency and duty cycle on the chemical structure of the obtained film are examined. During the film deposition optical emission spectroscopy is used to investigate the molecular dissociation of aniline. The chemical structure of the films is characterized using Fourier transform infra-red spectroscopy. The surface morphology is studied using atomic force microscopy. Results show the retention of polyaniline like structure having conjugated nature at some particular discharge conditions. Moreover, it is observed that a strong dependence of film chemistry is obvious on the discharge power, reactor pressure, pulse repetition frequency and duty cycle. The advantages of the pulsed dc for deposition of conjugated plasma polymerizes thin film have been highlighted.

  17. In-Vitro Biocompatibility Studies of Plasma-Nitrided Titanium Alloy β-21S Using Fibroblast Cells

    NASA Astrophysics Data System (ADS)

    Mohan, L.; Raja, M. D.; Uma, T. S.; Rajendran, N.; Anandan, C.

    2016-04-01

    In the present work, titanium alloy β-21S was nitrided in a low-pressure RF plasma with 100% nitrogen and 20% hydrogen-diluted nitrogen at 800 °C for 4 h and the samples were evaluated for in-vitro biocompatibility by using NIH 3T3 fibroblast cell line. Cellular behavior was evaluated in terms of cell morphology and its viability. FESEM was exploited to observe the morphology of the cells fixed over the surface of the implant. Fibroblasts were seemed to be well distributed over the surface with its characteristic spindle-like shape. Over all, the results indicate that nitriding provided a compatible surface for cell attachment and cell growth. Cell viability and proliferation was assessed by using standard MTT assay. Compared with substrate, the nitrided samples exhibited high-percentage cell viability demonstrating their increased biocompatibility. In addition, the nitrided samples facilitate bone-like apatite formation and exhibited a gradual increase of apatite formation after immersion in Hanks' solution.

  18. DC Electric Fields and Associated Plasma Drifts Observed with the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Bromund, K.; Rowland, D.

    2009-01-01

    Initial DC electric field observations and associated plasma drifts are presented from the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite. We present statistical averages of the vector fields for the first year of operations that include both the zonal and radial components of the resulting E x B plasma flows at low latitudes. Magnetic field data from the VEFI science magnetometer are used to compute the plasma flows. The DC electric field detector reveals zonal and radial electric fields that undergo strong diurnal variations, typically displaying eastward and outward-directed fields during the day and westward and downward-directed fields at night. There is considerable variation in the large scale DC electric field data, in both the daytime and nighttime cases, with enhanced structures typically observed at night. In general, the measured zonal DC electric field amplitudes include excursions that extend within the 0.4 - 2 m V/m range, corresponding to E x B drifts of the order of 30-150 m/s. The average vertical or radial electric fields may exceed the zonal fields in amplitude by a factor of 1.5 to 2. Although the data compare well, in a general sense, with previous satellite observations and statistical patterns of vertical ion drifts, the E x B drifts we report from C/NOFS rarely show a pronounced pre-reversal enhancement after sunset. We attribute this to a combination of extreme solar minimum conditions and the fact that the C/NOFS orbit of 401 by 867 km carries the probes essentially above the lower altitude regions where the wind-driven dynamo might be expected to create enhanced upwards drifts in the early evening. Evidence for wavenumber 4 tidal effects and other longitudinal signatures have been detected and will be presented. We also discuss off-equatorial electric fields and their relation to the ambient plasma density.

  19. FAST TRACK COMMUNICATION: Plasma agents in bio-decontamination by dc discharges in atmospheric air

    NASA Astrophysics Data System (ADS)

    Machala, Zdenko; Chládeková, Lenka; Pelach, Michal

    2010-06-01

    Bio-decontamination of water and surfaces contaminated by bacteria (Salmonella typhimurium) was investigated in two types of positive dc discharges in atmospheric pressure air, in needle-to-plane geometry: the streamer corona and its transition to a novel regime called transient spark with short high current pulses of limited energy. Both generate a cold non-equilibrium plasma. Electro-spraying of treated water through a needle electrode was applied for the first time and resulted in fast bio-decontamination. Experiments providing separation of various biocidal plasma agents, along with the emission spectra and coupled with oxidation stress measurements in the cell membranes helped to better understand the mechanisms of microbial inactivation. The indirect exposure of contaminated surfaces to neutral active species was almost as efficient as the direct exposure to the plasma, whereas applying only UV radiation from the plasma had no biocidal effects. Radicals and reactive oxygen species were identified as dominant biocidal agents.

  20. Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties.

    PubMed

    Merenkov, Ivan S; Kosinova, Marina L; Maximovskii, Eugene A

    2017-05-05

    Hexagonal boron nitride (h-BN) nanowalls (BNNWs) were synthesized by plasma-enhanced chemical vapor deposition (PECVD) from a borazine (B3N3H6) and ammonia (NH3) gas mixture at a low temperature range of 400 °C-600 °C on GaAs(100) substrates. The effect of the synthesis temperature on the structure and surface morphology of h-BN films was investigated. The length and thickness of the h-BN nanowalls were in the ranges of 50-200 nm and 15-30 nm, respectively. Transmission electron microscope images showed the obtained BNNWs were composed of layered non-equiaxed h-BN nanocrystallites 5-10 nm in size. The parallel-aligned h-BN layers as an interfacial layer were observed between the film and GaAs(100) substrate. BNNWs demonstrate strong blue light emission, high transparency (>90%) both in visible and infrared spectral regions and are promising for optical applications. The present results enable a convenient growth of BNNWs at low temperatures.

  1. Morphological and Electrochemical Study of Sulfide/Nitride Nanostructure Deposited Through Pulsed Plasma Electrolysis

    NASA Astrophysics Data System (ADS)

    Tavakoli, H.; Sobhani, M.

    2017-03-01

    This study investigated the feasibility of coating a steel St12 substrate with a sulfide/nitride layer. The coating process was conducted through a plasma electrolysis technique with a pulsed regime applied at frequencies of 100, 500, and 1000 Hz. It was found that the use of higher frequencies in the mentioned process provides better control over workpiece surface temperature and leads to reduced extent of voltage variations required to achieve a fixed temperature. The coating deposited at the frequency of 1000 Hz and voltage of about 235 V exhibited a nanostructure composed of 50 nm particles. The deposited coating consisted of an outer porous layer and an inner relatively dense layer. The x-ray studies identified the phases of the coating as γ'-Fe4N, Fe2-3N and FeS. The presence of FeS phase reduces the friction coefficient of the surface to about half the value obtainable in its absence. Studying the electrochemical impedance of the layer revealed that using a higher frequency in the deposition process increases the stability of resulting layer against seven days of immersion in the corrosive solution.

  2. ECR plasma synthesis of silicon nitride films on GaAs and InSb

    SciTech Connect

    Barbour, J.C.; Lovejoy, M.L.; Ashby, C.I.H.; Howard, A.J.; Custer, J.S.; Shul, R.J.

    1993-12-31

    Growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiN{sub x}) films were grown at temperatures from 30 to 250 C on GaAs substrates. Stress in films was measured as a function of bias applied during growth (varied from 0 to 200 V), and of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiN{sub x} growth without an applied bias (ion energy {congruent}30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of -200 V showed the largest reduction in film stress but also the smallest PL signal.

  3. Nitrogen-Doped Carbon Fiber Paper by Active Screen Plasma Nitriding and Its Microwave Heating Properties.

    PubMed

    Zhu, Naishu; Ma, Shining; Sun, Xiaofeng

    2016-12-28

    In this paper, active screen plasma nitriding (ASPN) treatment was performed on polyacrylonitrile carbon fiber papers. Electric resistivity and microwave loss factor of carbon fiber were described to establish the relationship between processing parameters and fiber's ability to absorb microwaves. The surface processing effect of carbon fiber could be characterized by dynamic thermal mechanical analyzer testing on composites made of carbon fiber. When the process temperature was at 175 °C, it was conducive to obtaining good performance of dynamical mechanical properties. The treatment provided a way to change microwave heating properties of carbon fiber paper by performing different treatment conditions, such as temperature and time parameters. Atomic force microscope, scanning electron microscope, and X-ray photoelectron spectroscopy analysis showed that, during the course of ASPN treatment on carbon fiber paper, nitrogen group was introduced and silicon group was removed. The treatment of nitrogen-doped carbon fiber paper represented an alternative promising candidate for microwave curing materials used in repairing and heating technology, furthermore, an efficient dielectric layer material for radar-absorbing structure composite in metamaterial technology.

  4. Effect of Low-Energy Ions on Plasma-Enhanced Deposition of Cubic Boron Nitride

    NASA Astrophysics Data System (ADS)

    Torigoe, M.; Fukui, S.; Teii, K.; Matsumoto, S.

    2015-09-01

    The effect of low-energy ions on deposition of cubic boron nitride (cBN) films in an inductively coupled plasma with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where sp2-bonded BN phase only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are estimated in the range of a few eV to 35 eV and 100 to 130, respectively. The impact of negative ions is presumed to be negligible due to their low kinetic energy relative to the sheath potential over the substrate surface. The impact of positive ions with high ion to boron flux ratios is primarily responsible for reduction of the ion energy for cBN film deposition. Work supported in part by a Grant-in-Aid for Scientific Research (B), a Funding Program for Next Generation World-Leading Researchers, and an Industrial Technology Research Grant Program 2008.

  5. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    NASA Astrophysics Data System (ADS)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m-3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  6. Microstructures and Mechanical Performance of Plasma-Nitrided Al0.3CrFe1.5MnNi0.5 High-Entropy Alloys

    NASA Astrophysics Data System (ADS)

    Tang, Wei-Yeh; Chuang, Ming-Hao; Lin, Su-Jien; Yeh, Jien-Wei

    2012-07-01

    This study investigates the effect of plasma nitriding at 798 K (525 °C) on microstructures and the mechanical performance of Al0.3CrFe1.5MnNi0.5 high-entropy alloys (HEAs) obtained using different cast and wrought processing. All the alloys can be well nitride, with a thickness of around 80 μm, and attain a peak hardness level around Hv 1300 near the surface. The main nitride phases are CrN, AlN, and (Mn, Fe)4N. Those of the substrates are bcc, fcc, Al-, and Ni-rich B2 precipitates, and ρ phase. Their relative amounts depend on the prior processing and also change under the heat treatment during nitriding. The formation of ρ phase during nitriding could in-situ harden the substrate to attain the suitable level required for wear applications. This gives the advantage in simplifying the processing for making a wear-resistance component or a mold since austenitizing, quench hardening, and tempering required for steels such as SACM and SKD steels are no longer required and final finishing can be accomplished before nitriding. Nitrided Al0.3CrFe1.5MnNi0.5 samples have much better wear resistance than un-nitrided ones by 49 to 80 times and also exhibit superior adhesive wear resistance to conventional nitrided alloys: nitriding steel SACM-645 (AISI 7140), 316 stainless steel, and hot-mold steel SKD-61 (AISI H13) by 22 to 55 times depending on prior processing. The superiority is due to the fact that the present nitrided alloys possess a much thicker highly hardened layer than the conventional alloys.

  7. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    SciTech Connect

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  8. Radio Frequency Plasma Synthesis of Boron Nitride Nanotubes (BNNTs) for Structural Applications. Part II

    NASA Technical Reports Server (NTRS)

    Hales, Stephen J.; Alexa, Joel A.; Jensen, Brian J.

    2016-01-01

    Boron nitride nanotubes (BNNTs) are more thermally and chemically compatible with metal- and ceramic-matrix composites than carbon nanotubes (CNTs). The lack of an abundant supply of defect-free, high-aspect-ratio BNNTs has hindered development as reinforcing agents in structural materials. Recent activities at the National Research Council - Canada (NRC-C) and the University of California - Berkeley (UC-B) have resulted in bulk synthesis of few-walled, small diameter BNNTs. Both processes employ induction plasma technology to create boron vapor and highly reactive nitrogen species at temperatures in excess of 8000 K. Subsequent recombination under controlled cooling conditions results in the formation of BNNTs at a rate of 20 g/hr and 35 g/hr, respectively. The end product tends to consist of tangled masses of fibril-, sheet-, and cotton candy-like materials, which accumulate within the processing equipment. The radio frequency plasma spray (RFPS) facility at NASA Langley (LaRC), developed for metallic materials deposition, has been re-tooled for in-situ synthesis of BNNTs. The NRC-C and UC-B facilities comprise a 60 kW RF torch, a reactor with a stove pipe geometry, and a filtration system. In contrast, the LaRC facility has a 100 kW torch mounted atop an expansive reaction chamber coupled with a cyclone separator. The intent is to take advantage of both the extra power and the equipment configuration to simultaneously produce and gather BNNTs in a macroscopic form amenable to structural material applications.

  9. Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films

    NASA Astrophysics Data System (ADS)

    Shams, Q. A.; Brown, W. D.

    1989-10-01

    Post-deposition ion implantation has been used to introduce argon into plasma-enhanced chemically vapor deposited silicon nitride films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the metal-silicon nitride-silicon oxide-silicon structure. Argon was implanted into the SiH4 -NH3 -N2 deposited films at energies ranging from 25 to 75 keV, current densities ranging from 0.1 to 75 μA/cm2 and fluences ranging from 1×1012 to 1×1016 ions/cm2. Physical properties of the films were studied by ellipsometry and infrared spectroscopy, while high frequency capacitance-voltage (C-V) curves were used to obtain programming, retention, and endurance characteristics.

  10. Formation of Equiaxed Alpha and Titanium Nitride Precipitates in Spark Plasma Sintered TiB/Ti-6Al-4V Composites (Preprint)

    DTIC Science & Technology

    2012-08-01

    AFRL-RX-WP-TP-2012-0372 FORMATION OF EQUIAXED ALPHA AND TITANIUM NITRIDE PRECIPITATES IN SPARK PLASMA SINTERED TiB/Ti-6Al-4V COMPOSITES...ALPHA AND TITANIUM NITRIDE PRECIPITATES IN SPARK PLASMA SINTERED TiB/Ti-6Al-4V COMPOSITES (PREPRINT) 5a. CONTRACT NUMBER FA8650-08-C-5226 5b...distribution of TiN precipitates, as revealed by TEM studies. 15. SUBJECT TERMS Ti-6Al-4V; TiB; TiN; Spark Plasma Sintering ; Composite; α/β phase

  11. SF6/O2 plasma effects on silicon nitride passivation of AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M.

    2006-11-01

    The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaN /GaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various SF6/O2 plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

  12. Study of dynamical behaviour of the plasma in a dc non-transferred plasma torch using fast imaging

    NASA Astrophysics Data System (ADS)

    Goyal, Vidhi; Ravi, G.; Bandyopadhyay, P.; Banerjee, S.; Yugesh, V.; Mukherjee, S.

    2017-03-01

    The dynamical behaviour of the plasma in a dc non-transferred plasma torch is the result of complex interactions between various forces acting on the plasma column. We have studied this behaviour in a novel experiment comprising a low power (˜25 kW) torch and fast imaging diagnostics. The nitrogen gas plasma torch was operated at atmospheric pressure for a wide range of gas flow rates (20-60 lpm) and currents (70-120 A). A strong axial external magnetic field (100-500 G) was introduced and end-on images of the plasma column were captured using a high speed camera of frame rate ˜117 000 fps. The studies have yielded dominant role of external magnetic on the arc root dynamics. The column is clearly distinguishable in three main parts: central plasma, cathode-anode junction, and radial component of column that attaches to the anode. The dynamics of the column, especially the angular rotational speed of the radial part of the column, is analyzed in detail in terms of the forces that act upon it. The nature of the arc root attachment is observed to vary with variation in main experimental parameters, such as current, magnetic field, and flow. Arguments are invoked to explain the observed phenomena and a model of the physical processes is presented to explain the phenomena.

  13. New perspectives on the dynamics of AC and DC plasma arcs exposed to cross-fields

    NASA Astrophysics Data System (ADS)

    Abdo, Youssef; Rohani, Vandad; Cauneau, François; Fulcheri, Laurent

    2017-02-01

    Interactions between an arc and external fields are crucially important for the design and the optimization of modern plasma torches. Multiple studies have been conducted to help better understand the behavior of DC and AC current arcs exposed to external and ‘self-induced’ magnetic fields, but the theoretical foundations remain very poorly explored. An analytical investigation has therefore been carried out in order to study the general behavior of DC and AC arcs under the effect of random cross-fields. A simple differential equation describing the general behavior of a planar DC or AC arc has been obtained. Several dimensionless numbers that depend primarily on arc and field parameters and the main arc characteristics (temperature, electric field strength) have also been determined. Their magnitude indicates the general tendency pattern of the arc evolution. The analytical results for many case studies have been validated using an MHD numerical model. The main purpose of this investigation was deriving a practical analytical model for the electric arc, rendering possible its stabilization and control, and the enhancement of the plasma torch power.

  14. Modelling chemical reactions in dc plasma inside oxygen bubbles in water

    NASA Astrophysics Data System (ADS)

    Takeuchi, N.; Ishii, Y.; Yasuoka, K.

    2012-02-01

    Plasmas generated inside oxygen bubbles in water have been developed for water purification. Zero-dimensional numerical simulations were used to investigate the chemical reactions in plasmas driven by dc voltage. The numerical and experimental results of the concentrations of hydrogen peroxide and ozone in the solution were compared with a discharge current between 1 and 7 mA. Upon increasing the water vapour concentration inside bubbles, we saw from the numerical results that the concentration of hydrogen peroxide increased with discharge current, whereas the concentration of ozone decreased. This finding agreed with the experimental results. With an increase in the discharge current, the heat flux from the plasma to the solution increased, and a large amount of water was probably vaporized into the bubbles.

  15. Towards long-lasting antibacterial stainless steel surfaces by combining double glow plasma silvering with active screen plasma nitriding.

    PubMed

    Dong, Y; Li, X; Tian, L; Bell, T; Sammons, R L; Dong, H

    2011-01-01

    Antibacterial surface modification of biomedical materials has evolved as a potentially effective method for preventing bacterial proliferation on the surfaces of devices. However, thin antibacterial coatings or modified layers can be easily worn down when interacting with other surfaces in relative motion, thus leading to a low durability of the antibacterial surface. To this end, novel biomaterial surfaces with antibacterial Ag agents and a wear-resistant S-phase have been generated on stainless steel by duplex plasma silvering-nitriding techniques for application to load-bearing medical devices. The chemical composition, microstructure, surface topography, roughness and wettability of SS surfaces were characterised using glow discharge optical emission spectroscopy, energy-dispersive spectroscopy/wavelength dispersive spectrometry (WDS), X-ray diffraction, atomic force microscopy and a contact angle goniometer. Optimal surface design for high antimicrobial activity and prolonged durability has been achieved, as evidenced by rapid bacterial killing rates (within 6h), an ultra hard matrix (875 ± 25 Hv), high load-bearing capacity (critical load 37 N) and excellent wear resistance (wear rate 4.9 × 10⁻⁶ mm³ m⁻¹). Ag embedded in the hard substrate of fcc compounds M(4)N (M=Fe, Cr, Ag, etc.) and the expanded fcc nitrogen S-phase shows deep infiltration of 6 ± 1 μm, and provides bactericidal activity against both Gram-negative Escherichia coli NCTC 10418 and Gram-positive Staphylococcus epidermidis NCTC 11047 of over 97% and 90%, respectively, within 6h. The presence of silver in the surface before and after scratching under a progressive load applied up to 60 N using a diamond stylus was confirmed by WDS.

  16. Effects of Gas Flow Rate on the Discharge Characteristics of a DC Excited Plasma Jet

    NASA Astrophysics Data System (ADS)

    Li, Xuechen; Jia, Pengying; Di, Cong; Bao, Wenting; Zhang, Chunyan

    2015-09-01

    A direct current (DC) source excited plasma jet consisting of a hollow needle anode and a plate cathode has been developed to form a diffuse discharge plume in ambient air with flowing argon as the working gas. Using optical and electrical methods, the discharge characteristics are investigated for the diffuse plasma plume. Results indicate that the discharge has a pulse characteristic, under the excitation of a DC voltage. The discharge pulse corresponds to the propagation process of a plasma bullet travelling from the anode to the cathode. It is found that, with an increment of the gas flow rate, both the discharge plume length and the current peak value of the pulsed discharge decrease in the laminar flow mode, reach their minima at about 1.5 L/min, and then slightly increase in the turbulent mode. However, the frequency of the pulsed discharge increases in the laminar mode with increasing the argon flow rate until the argon flow rate equals to about 1.5 L/min, and then slightly decreases in the turbulent mode. supported by National Natural Science Foundation of China (Nos. 10805013, 11375051), Funds for Distinguished Young Scientists of Hebei Province, China (No. A2012201045), Department of Education for Outstanding Youth Project of China (No. Y2011120), and Youth Project of Hebei University of China (No. 2011Q14)

  17. Discharge modes of a DC operated atmospheric pressure air plasma jet

    NASA Astrophysics Data System (ADS)

    Kolb, Juergen; Pei, Xuekai; Kredl, Jana; Lu, Xinpei

    2016-09-01

    By flowing air or nitrogen through a microhollow cathode discharge geometry an afterglow plasma jet can be generated at atmospheric pressure in air. The plasma jet has been successfully used for the inactivation of bacteria and yeast. The responsible reaction chemistry is based on the production of high concentrations of nitric oxide. Production yields depend in particular on gas flow rate and energy dissipated in the plasma. The same parameters also determine different modes of operation for the jet. A true DC operation is achieved for low to moderate gas flow rate of about 1 slm and discharge currents on the order of 10 mA. When increasing the gas flow rate to 10 slm the operation is changing to a self-pulsing mode with characteristics similar to the ones observed for a transient spark. By increasing the current a DC operation can be achieved again also at higher gas flow rates. The parameter regimes for different modes of operation can be described by the reduced electric field E/N.

  18. Deposition of magnesium nitride thin films on stainless steel-304 substrates by using a plasma focus device

    NASA Astrophysics Data System (ADS)

    Ramezani, Amir Hoshang; Habibi, Maryam; Ghoranneviss, Mahmood

    2014-08-01

    In this research, for the first time, we synthesize magnesium nitride thin films on 304-type stainless steel substrates using a Mather-type (2 kJ) plasma focus (PF) device. The films of magnesium nitride are coated with different number of focus shots (like 15, 25 and 35) at a distance of 8 cm from the anode tip and at 0° angular position with respect to the anode axis. For investigation of the structural properties and surface morphology of magnesium nitride films, we utilized the X-ray diffractometer (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) analysis, respectively. Also, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. Furthermore, Vicker's microhardness is used to study the mechanical properties of the deposited films. The results show that the degree of crystallinity of deposited thin films (from XRD), the average size of particles and surface roughness (from AFM), crystalline growth of structures (from SEM) and the hardness values of the films depend on the number of focus shots. The EDX analysis demonstrates the existence of the elemental composition of magnesium in the deposited samples.

  19. The Influence of Plasma Nitriding Pre-Treatment on Tribological Properties of TiN Coatings Deposited by PACVD

    NASA Astrophysics Data System (ADS)

    Mahdipoor, M. S.; Mahboubi, F.; Ahangarani, Sh.; Raoufi, M.; Elmkhah, H.

    2012-06-01

    The aim of this study is to investigate the effect of plasma nitriding pre-treatment (PN) on mechanical and tribological behavior of TiN coatings produced by plasma-assisted chemical vapor deposition (PACVD). The heat treatment of quench and temper was carried out on hot work AISI H11 (DIN 1.2343) steel samples. A group of samples were plasma nitrided at 500 °C for 4 h in an atmosphere containing 25 vol.% nitrogen and 75 vol.% hydrogen. Then TiN layer was deposited on all of samples at 520 °C temperature, 8 kHz frequency, and 33% duty cycle. The microstructural, mechanical, and tribological properties of the coatings were investigated using SEM, WDS, AFM, microhardness tester, and pin-on-disc wear test. The load of wear test was 10 N and the samples were worn against different pins, ball-bearing steel (DIN 1.3505), and cemented tungsten carbide (WC-Co). The results indicate that the difference of hardness between the samples with PN-TiNlayer and those samples with only TiN layer without PN was 450 HV and the former samples showed a significant amount of wear resistance in comparison to the latter ones.

  20. Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.

    1985-01-01

    The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

  1. Influence of injected silver content on synthesis of silver coated nickel particles by DC thermal plasma

    NASA Astrophysics Data System (ADS)

    Park, Si Taek; Kim, Tae-Hee; Park, Dong-Wha

    2016-06-01

    Silver nanoparticle-coated spherical nickel particles were prepared from a mixture of micro-sized silver and nickel as raw materials by DC thermal plasma treatment. The mixture of micro-sized silver and nickel powders was injected into the high-temperature region of an argon thermal plasma jet. Although the silver, with its very high thermal conductivity and relatively low boiling point, was thoroughly evaporated by this process, nickel was not evaporated perfectly because of its comparatively low thermal conductivity and high boiling point. The rough nickel powder was spheroidized as it melted. Finally, silver evaporated by the thermal plasma quickly condensed into nanoparticles on the surfaces of the micro-sized spherical nickel particles, aided by the sharp temperature gradient of the thermal plasma jet. With varying the ratios of silver to nickel feedstock from 1:10 to 5:1, the products synthesized in each condition were examined by XRD, XPS, FE-SEM, and FE-TEM. More silver nanoparticles were attached on the nickel by increasing the injected feedstock to 9.8 at% silver. Meanwhile, a decrease of silver in the products was observed when larger amounts of silver were introduced to the thermal plasma jet. The exposed silver components decreased with greater proportions of silver feedstock because of the metal's dendritic structure and the formation of silver-coated silver particles.

  2. Study on effect of plasma surface treatments for diamond deposition by DC arc plasmatron.

    PubMed

    Kang, In-Je; Joa, Sang-Beom; Lee, Heon-Ju

    2013-11-01

    To improve the thermal conductivity and wear resistance of ceramic materials in the field of renewable energy technologies, diamond coating by plasma processing has been carried out in recent years. This study's goal is to improve diamond deposition on Al2O3 ceramic substrates by plasma surface treatments. Before diamond deposition was carried out in a vacuum, plasma surface treatments using Ar gas were conducted to improve conditions for deposition. We also conducted plasma processing for diamond deposition on Al2O3 ceramic substrates using a DC arc Plasmatron. The Al2O3 ceramic substrates with diamond film (5 x 15 mm2), were investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then, the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) was studied. We identified nanocrystalline diamond films on the Al2O3 ceramic substrates. The results showed us that the deposition rate of diamond films was 2.3 microm/h after plasma surface treatments. Comparing the above result with untreated ceramic substrates, the deposition rate improved with the surface roughness of the deposited diamond films.

  3. Mixed mode oscillations in presence of inverted fireball in an excitable DC glow discharge magnetized plasma

    NASA Astrophysics Data System (ADS)

    Mitra, Vramori; Prakash, N. Hari; Solomon, Infant; Megalingam, Mariammal; Sekar Iyengar, A. N.; Marwan, Norbert; Kurths, Jürgen; Sarma, Arun; Sarma, Bornali

    2017-02-01

    The typical phenomena of mixed mode oscillations and their associated nonlinear behaviors have been investigated in collisionless magnetized plasma oscillations in a DC glow discharge plasma system. Plasma is produced between a cylindrical mesh grid and a constricted anode. A spherical mesh grid of 80% optical transparency is kept inside a cylindrical grid to produce an inverted fireball. Three Langmuir probes are kept in the ambient plasma to measure the floating potential fluctuations at different positions of the chamber. It has been observed that under certain conditions of discharge voltages and magnetic fields, the mixed mode oscillation phenomena (MMOs) appears, and it shows a sequential alteration with the variation of the magnetic fields and probe positions. Low frequency instability has been observed consistently in various experimental conditions. The mechanisms of the low frequency instabilities along with the origin of the MMOs have been qualitatively explained. Extensive linear and nonlinear analysis using techniques such as fast Fourier transform, recurrence quantification analysis, and the well-known statistical computing, skewness, and kurtosis are carried out to explore the complex dynamics of the MMO appearing in the plasma oscillations under various discharge conditions and external magnetic fields.

  4. Structural and Dynamical Properties of Microrod Dusty Plasma in a Uniform DC Discharge under Microgravity

    SciTech Connect

    Usachev, Alexander; Zobnin, Andrey; Petrov, Oleg; Fortov, Vladimir

    2008-09-07

    In present experiment an ordering and dynamics of monodisperse nylon rods (D = 10 {mu}m, L = 300 {mu}m) in a uniform DC gas discharge plasma under microgravity have been investigated. Ordered rod structures were registered in DC discharge with a rod concentration of 400-8000 cm{sup -3} and a neon pressure range of 20-50 Pa. The structures revealed orientationally ordered hexagonal structures. DC discharge became unstable at rod number density more then 8000 cm{sup -3}. Rod drift velocities in a permanent electric field were measured for the neon pressure range. Dust acoustic instability ({nu}{approx}0.4{+-}0.1 Hz, {lambda}{approx}1.1{+-}0.4 cm, C{sub DAW}{approx}0.5 cm/s) in rod cloud was observed at a neon pressure of 25 Pa and a rod number density of 1500 cm{sup -3}. Using the 'low' frequency approximation of the linearized DAW dispersion relation and the measured rod drift velocity a rod electric charge had been estimated as Z{sub R}{approx}150000e.

  5. Desorption behavior of zinc atoms from zinc-sulfate solution irradiated with pulsed DC plasma

    NASA Astrophysics Data System (ADS)

    Takaba, Takafumi; Suzuki, Haruka; Toyoda, Hirotaka

    2016-07-01

    A DC pulsed plasma ignited between a metal needle and zinc sulfate (ZnSO4) solution electrode was used to investigate Zn metal desorption from an electrolyte solution. Using an ICCD camera and optical band-pass filter, 2D atomic absorption spectroscopy was carried out during irradiation of pulsed plasma to the surface of the solution. The time-resolved measurement of Zn atoms released to the gas phase revealed that the Zn desorption rate monotonically increased with increasing number of discharge repetitions. The surface temperature of the electrolyte solution was observed with a thermographic camera, and correlations between the H2O and Zn desorption rate were inspected. The correlation between the H2O and Zn desorption rate suggested that Zn desorption is assisted not only by the electric field of the discharge but also by H2O evaporating from the solution.

  6. Formation of ultrasharp vertically aligned Cu-Si nanocones by a DC plasma process.

    PubMed

    Klein, K L; Melechko, A V; Fowlkes, J D; Rack, P D; Hensley, D K; Meyer, H M; Allard, L F; McKnight, T E; Simpson, M L

    2006-03-16

    We report an effective method for the production of ultrasharp vertically oriented silicon nanocones with tip radii as small as 5 nm. These silicon nanostructures were shaped by a high-temperature acetylene and ammonia dc plasma reactive ion etch (RIE) process. Thin-film copper deposited onto Si substrates forms a copper silicide (Cu3Si) during plasma processing, which subsequently acts as a seed material masking the single-crystal cones while the exposed silicon areas are reactive ion etched. In this process, the cone angle is sharpened continually as the structure becomes taller. Furthermore, by lithographically defining the seed material as well as employing an etch barrier material such as titanium, the cone location and substrate topography can be controlled effectively.

  7. Inertization of heavy metals present in galvanic sludge by DC thermal plasma.

    PubMed

    Leal Vieira Cubas, Anelise; de Medeiros Machado, Marília; de Medeiros Machado, Marina; Gross, Frederico; Magnago, Rachel Faverzani; Moecke, Elisa Helena Siegel; Gonçalvez de Souza, Ivan

    2014-01-01

    Galvanic sludge results from the treatment of effluents generated by the industrial metal surface treatment of industrial material, which consists in the deposition of a metal on a surface or a metal surface attack, for example, electrodeposition of conductors (metals) and non conductive, phosphate, anodizing, oxidation and/or printed circuit. The treatment proposed here is exposure of the galvanic sludge to the high temperatures provided by thermal plasma, a process which aims to vitrify the galvanic sludge and render metals (iron, zinc, and chromium) inert. Two different plasma reactors were assembled: with a DC transferred arc plasma torch and with a DC nontransferred arc plasma torch. In this way it was possible to verify which reactor was more efficient in the inertization of the metals and also to investigate whether the addition of quartzite sand to the sludge influences the vitrification of the material. Quantification of water content and density of the galvanic raw sludge were performed, as well as analyzes of total organic carbon (TOC) and identify the elements that make up the raw sludge through spectroscopy X-ray fluorescence (XRF). The chemical composition and the form of the pyrolyzed and vitrified sludge were analyzed by scanning electron microscopy with energy-dispersive X-ray spectrometer (SEM-EDS) analysis, which it is a analysis that shows the chemical of the sample surface. The inertization of the sludge was verified in leaching tests, where the leachate was analyzed by flame atomic absorption spectroscopy (FAAS). The results of water content and density were 64.35% and 2.994 g.cm(-3), respectively. The TOC analysis determined 1.73% of C in the sample of galvanic raw sludge, and XRF analysis determined the most stable elements in the sample, and showed the highest peaks (higher stability) were Fe, Zn, and Cr. The efficiency of the sludge inertization was 100% for chromium, 99% for zinc, and 100% for iron. The results also showed that the most

  8. Structured DC Electric Fields With and Without Associated Plasma Density Gradients Observed with the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Rowland, D.; Klenzing, J.; Freudenreich, H.; Bromund, K.; Liebrecht, C.; Roddy, P.; Hunton, D.

    2009-01-01

    DC electric field observations and associated plasma drifts gathered with the Vector Electric Field Investigation on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite typically reveal considerable variation at large scales (approximately 100's of km), in both daytime and nighttime cases, with enhanced structures usually confined to the nightside. Although such electric field structures are typically associated with plasma density depletions and structures, as observed by the Planar Langmuir Probe on C/NOFS, what is surprising is the number of cases in which large amplitude, structured DC electric fields are observed without a significant plasma density counterpart structure, including their appearance at times when the ambient plasma density appears relatively quiescent. We investigate the relationship of such structured DC electric fields and the ambient plasma density in the C/NOFS satellite measurements observed thus far, taking into account both plasma density depletions and enhancements. We investigate the mapping of the electric fields along magnetic field lines from distant altitudes and latitudes to locations where the density structures, which presumably formed the original seat of the electric fields, are no longer discernible in the observations. In some cases, the electric field structures and spectral characteristics appear to mimic those associated with equatorial spread-F processes, providing important clues to their origins. We examine altitude, seasonal, and longitudinal effects in an effort to establish the origin of such structured DC electric fields observed both with, and without, associated plasma density gradients

  9. DC Electric Fields, Associated Plasma Drifts, and Irregularities Observed on the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Klenzing, J.

    2011-01-01

    Results are presented from the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite, a mission designed to understand, model, and forecast the presence of equatorial ionospheric irregularities. The VEFI instrument includes a vector DC electric field detector, a fixed-bias Langmuir probe operating in the ion saturation regime, a flux gate magnetometer, an optical lightning detector, and associated electronics including a burst memory. Compared to data obtained during more active solar conditions, the ambient DC electric fields and their associated E x B drifts are variable and somewhat weak, typically < 1 mV/m. Although average drift directions show similarities to those previously reported, eastward/outward during day and westward/downward at night, this pattern varies significantly with longitude and is not always present. Daytime vertical drifts near the magnetic equator are largest after sunrise, with smaller average velocities after noon. Little or no pre-reversal enhancement in the vertical drift near sunset is observed, attributable to the solar minimum conditions creating a much reduced neutral dynamo at the satellite altitude. The nighttime ionosphere is characterized by larger amplitude, structured electric fields, even where the plasma density appears nearly quiescent. Data from successive orbits reveal that the vertical drifts and plasma density are both clearly organized with longitude. The spread-F density depletions and corresponding electric fields that have been detected thus far have displayed a preponderance to appear between midnight and dawn. Associated with the narrow plasma depletions that are detected are broad spectra of electric field and plasma density irregularities for which a full vector set of measurements is available for detailed study. The VEFI data represents a new set of measurements that are germane to numerous fundamental aspects of the electrodynamics

  10. Synthesis of silicon carbide from rice husk in a dc arc plasma reactor

    SciTech Connect

    Nayak, B.B.; Mohanty, B.C.; Singh, S.K.

    1996-05-01

    SiC particles have been synthesized in the {alpha}-phase from a mixture of boiler-burnt rice husk and graphite powder in a dc extended arc plasma reactor on a 200--250 g scale. A SiC yield as high as 72% was achieved at a 3.03:1 carbon-to-silica ratio. 21R polytypism, which is rare to grow, was observed in the SiC. About 90% of the SiC particles produced were found to lie under 163 {micro}m, 50% under 90 {micro}m, and 10% under 28 {micro}m size. Very fine particles under 10 {micro}m size occurred to the extent of 3%. XRD and SEM characterizations were carried out to study the phase and morphology of the particles. Heterogeneous gas-phase reactions seem to be responsible for intermediate-size SiC particle growth in the multitemperature zone dc extended arc plasma reactor.

  11. Production of geopolymers using glass produced from DC plasma treatment of air pollution control (APC) residues.

    PubMed

    Kourti, Ioanna; Rani, D Amutha; Deegan, D; Boccaccini, A R; Cheeseman, C R

    2010-04-15

    Air pollution control (APC) residues are the hazardous waste produced from cleaning gaseous emissions at energy-from-waste (EfW) facilities processing municipal solid waste (MSW). APC residues have been blended with glass-forming additives and treated using DC plasma technology to produce a high calcium alumino-silicate glass. This research has investigated the optimisation and properties of geopolymers prepared from this glass. Work has shown that high strength geopolymers can be formed and that the NaOH concentration of the activating solution significantly affects the properties. The broad particle size distribution of the APC residue glass used in these experiments results in a microstructure that contains unreacted glass particles included within a geopolymer binder phase. The high calcium content of APC residues may cause the formation of some amorphous calcium silicate hydrate (C-S-H) gel. A mix prepared with S/L=3.4, Si/Al=2.6 and [NaOH]=6M in the activating solution, produced high strength geopolymers with compressive strengths of approximately 130 MPa. This material had high density (2070 kg/m(3)) and low porosity. The research demonstrates for the first time that glass derived from DC plasma treatment of APC residues can be used to form high strength geopolymer-glass composites that have potential for use in a range of applications.

  12. Effect of process parameters on the mechanical properties of carbon nitride thin films synthesized by plasma assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tabbal, M.; Mérel, P.; Chaker, M.

    We present an investigation of the effect of the process parameters, namely deposition pressure and laser intensity, on the growth and mechanical properties of carbon nitride (CNx) thin films synthesized by plasma assisted pulsed laser deposition. Deposition at high remote plasma pressure (200 mTorr) enhances both growth rate and nitrogen incorporation (up to 40 at.%), but nano-indentation measurements indicate that these films are very soft and have poor mechanical properties. At low remote plasma pressure (0.5 mTorr), the nitrogen content varies from 24 to 16 at.% with increasing laser intensity as the films become much harder and more elastic, with hardness and Young's modulus values reaching 24 GPa and 230 GPa, respectively. These effects are explained in terms of a thermalization of the laser plasma at 200 mTorr and indicate that plasma activation of nitrogen does not provide any particular benefit to the film properties when deposition is performed at high pressure. However, at low pressure, the benefit of plasma activation is evidenced through enhanced nitrogen incorporation in the films while preserving the highly energetic species in the ablation plume. Such conditions lead to the synthesis, at room temperature, of hard and elastic films having properties close to those of fullerene-like CNx.

  13. Tribological evaluation of diamond coating on pure titanium in comparison with plasma nitrided titanium and uncoated titanium

    SciTech Connect

    Yan, B.; Loh, N.L.; Fu, Y.; Sun, C.Q.; Hing, P.

    1999-12-01

    Titanium alloys are characterized by poor tribological properties, and the traditional use of titanium alloys has been restricted to nontribological applications. The deposition of a well adherent diamond coating is a promising way to solve this problem. In this study, the tribological properties of diamond-coated titanium were studied using a pin-on-disk tribometer, and the results were compared with those of pure titanium and plasma nitrided titanium. The tribological behavior of pure titanium was characterized by high coefficient of friction and rapid wear of materials. Plasma nitriding improved the wear resistance only under low normal load; however, this hardened layer was not efficient in improving the wear resistance and the friction properties under high normal load. Diamond coating on pure titanium improved the wear resistance of titanium significantly. Surface profilometry measurement indicated that little or no wear of the diamond coating occurred under the test conditions loads. The roughness of the diamond coating was critical because it controlled the amount of abrasive damage on the counterface. Reducing the surface roughness by polishing led to the reductions in both the friction and wear of the counterface.

  14. Synthesis of aluminum nitride powders from a plasma-assisted ball milled precursor through carbothermal reaction

    SciTech Connect

    Liu, Zhi-jie; Dai, Le-yang; Yang, De-zheng; Wang, Sen; Zhang, Bao-jian; Wang, Wen-chun; Cheng, Tie-han

    2015-01-15

    Highlights: • A novel and high efficiency synthesizing AlN powders method combining mechanical ball milling and DBDP has been developed. • The particle size, the crystallite size, the lattice distortion, the morphology of Al{sub 2}O{sub 3} powders, and the AlN conversion rate are investigated and compared under the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP. • The ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. - Abstract: In this paper, aluminum nitride (AlN) powers have been produced with a novel and high efficiency method by thermal annealing at 1100–1600 °C of alumina (Al{sub 2}O{sub 3}) powders which were previously ball milled for various time up to 40 h with and without the assistant of dielectric barrier discharge plasma (DBDP). The ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP and the corresponding synthesized AlN powers are characterized by X-ray diffraction, scanning electron microscope, and transmission electron microscopy. From the characteristics of the ball milled Al{sub 2}O{sub 3} powders with DBDP and without DBDP, it can be seen that the ball milled Al{sub 2}O{sub 3} powders with DBDP have small spherical structure morphology with very fine particles size and high specific surface area, which result in a higher chemical efficiency and a higher AlN conversion rate at lower thermal temperature. Meanwhile, the synthesized AlN powders can be known as hexagonal AlN with fine crystal morphology and irregular lump-like structure, and have uniform distribution with the average particle size of about between 500 nm and 1000 nm. This provides an important method for fabricating ultra fine powders and synthesizing nitrogen compounds.

  15. Plasma kinetic processes in a strong d.c. magnetic field

    NASA Technical Reports Server (NTRS)

    Montgomery, D.

    1976-01-01

    Recent results in the kinetic theory of a strongly magnetized plasma are surveyed. Emphasis is on the electrostatic guiding-center plasma in two dimensions, in both the fluid and 'charged rod' descriptions. The basic kinetic description of the plasma is in terms of the statistically-distributed Fourier coefficients associated with the velocity and 'enstrophy' (charge density) fields. It is a universal tendency in such media for enstrophy to flow to shorter wavelengths but for energy to flow to longer wavelengths. A consequence of the energy flow to longer wavelengths is the generation of long-range order in the form of macroscopic vortices. These kinds of structure have been called 'convection cells' and can be extraordinarily efficient in transporting particles transverse to a magnetic field. The tendency to vortex formation can be disrupted by collisions between particles. Modifications of the Fokker-Planck equation for a plasma produced by a strong dc magnetic field are considered in both two and three dimensions.

  16. Coal pyrolysis to acetylene using dc hydrogen plasma torch: effects of system variables on acetylene concentration

    NASA Astrophysics Data System (ADS)

    Chen, Longwei; Meng, Yuedong; Shen, Jie; Shu, Xingsheng; Fang, Shidong; Xiong, Xinyang

    2009-03-01

    In order to unveil the inner mechanisms that determine acetylene concentration, experimental studies on the effect of several parameters such as plasma torch power, hydrogen flux and coal flux were carried out from coal pyrolysis in a dc plasma torch. Xinjiang long flame coals including volatile constituents at a level of about 42% were used in the experiment. Under the following experimental conditions, namely plasma torch power, hydrogen flow rate and pulverized coal feed speed of 2.12 MW, 32 kg h-1 and 900 kg h-1, respectively, acetylene volume concentration of about 9.4% was achieved. The experimental results indicate that parameters such as plasma torch power and coal flux play important roles in the formation of acetylene. Acetylene concentration increases inconspicuously with hydrogen flux. A chemical thermodynamic equilibrium model using the free energy method is introduced in this paper to numerically simulate each experimental condition. The numerical results are qualitatively consistent with the experimental results. Two parameters, i.e. the gas temperature and the ratio of hydrogen/carbon, are considered to be the dominant and independent factors that determine acetylene concentration.

  17. Ion-plasma nitriding as a method of instruments and parts durability

    NASA Astrophysics Data System (ADS)

    Samigullin, A. D.; Galiakbarov, A. T.; Galiakbarov, R. T.; Samigullina, A. R.

    2017-01-01

    Improvement of the machines, parts, devices reliability as well as improvement of their quality and operation are topics of interest at the present time. Solution to these problems is related to hardening of the product surface layers in the first place. This article deals with parameters of nitriding process using the example of 38XM steel which is applied in essential parts of turbine installations and compressors operating at temperatures up to 400°C. The article also provides the results of nitriding at different modes.

  18. Excitation wavelength dependence of water-window line emissions from boron-nitride laser-produced plasmas

    SciTech Connect

    Crank, M.; Harilal, S. S.; Hassan, S. M.; Hassanein, A.

    2012-02-01

    We investigated the effects of laser excitation wavelength on water-window emission lines of laser-produced boron-nitride plasmas. Plasmas are produced by focusing 1064 nm and harmonically generated 532 and 266 nm radiation from a Nd:YAG laser on BN target in vacuum. Soft x-ray emission lines in the water-window region are recorded using a grazing-incidence spectrograph. Filtered photodiodes are used to obtain complementary data for water-window emission intensity and angular dependence. Spectral emission intensity changes in nitrogen Ly-{alpha} and He-{alpha} are used to show how laser wavelength affects emission. Our results show that the relative intensity of spectral lines is laser wavelength dependent, with the ratio of Ly-{alpha} to He-{alpha} emission intensity decreasing as laser wavelength is shortened. Filtered photodiode measurements of angular dependence showed that 266 and 532 nm laser wavelengths produce uniform emission.

  19. Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

    SciTech Connect

    Corbella, C.; Rubio-Roy, M.; Bertran, E.; Andujar, J. L.

    2009-08-01

    Here we approximate the plasma kinetics responsible for diamondlike carbon (DLC) depositions that result from pulsed-dc discharges. The DLC films were deposited at room temperature by plasma-enhanced chemical vapor deposition (PECVD) in a methane (CH{sub 4}) atmosphere at 10 Pa. We compared the plasma characteristics of asymmetric bipolar pulsed-dc discharges at 100 kHz to those produced by a radio frequency (rf) source. The electrical discharges were monitored by a computer-controlled Langmuir probe operating in time-resolved mode. The acquisition system provided the intensity-voltage (I-V) characteristics with a time resolution of 1 mus. This facilitated the discussion of the variation in plasma parameters within a pulse cycle as a function of the pulse waveform and the peak voltage. The electron distribution was clearly divided into high- and low-energy Maxwellian populations of electrons (a bi-Maxwellian population) at the beginning of the negative voltage region of the pulse. We ascribe this to intense stochastic heating due to the rapid advancing of the sheath edge. The hot population had an electron temperature T{sub e}{sup hot} of over 10 eV and an initial low density n{sub e}{sup hot} which decreased to zero. Cold electrons of temperature T{sub e}{sup cold}approx1 eV represented the majority of each discharge. The density of cold electrons n{sub e}{sup cold} showed a monotonic increase over time within the negative pulse, peaking at almost 7x10{sup 10} cm{sup -3}, corresponding to the cooling of the hot electrons. The plasma potential V{sub p} of approx30 V underwent a smooth increase during the pulse and fell at the end of the negative region. Different rates of CH{sub 4} conversion were calculated from the DLC deposition rate. These were explained in terms of the specific activation energy E{sub a} and the conversion factor x{sub dep} associated with the plasma processes. The work deepens our understanding of the advantages of using pulsed power supplies

  20. Research on Nitride Thin Films, Advanced Plasma Diagnostics, and Charged-Particle Processes

    DTIC Science & Technology

    2006-07-01

    Area Code) N/A Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. Z39-18 iii Table of Contents Section Page TASK 1. CARBON-NITRIDE...5.11 Optical Band Gap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 iv Table of Contents...65 44 Values of εr for Each Sample Condition and Substrate Type . . . . . . . . . . . . . . . . 67 viii List of Tables Table

  1. Geopolymers prepared from DC plasma treated air pollution control (APC) residues glass: properties and characterisation of the binder phase.

    PubMed

    Kourti, Ioanna; Devaraj, Amutha Rani; Bustos, Ana Guerrero; Deegan, David; Boccaccini, Aldo R; Cheeseman, Christopher R

    2011-11-30

    Air pollution control (APC) residues have been blended with glass-forming additives and treated using DC plasma technology to produce a high calcium aluminosilicate glass (APC glass). This has been used to form geopolymer-glass composites that exhibit high strength and density, low porosity, low water absorption, low leaching and high acid resistance. The composites have a microstructure consisting of un-reacted residual APC glass particles imbedded in a complex geopolymer and C-S-H gel binder phase, and behave as particle reinforced composites. The work demonstrates that materials prepared from DC plasma treated APC residues have potential to be used to form high quality pre-cast products.

  2. Influence of a transverse magnetic field on arc root movements in a dc plasma torch: Diamagnetic effect of arc column

    SciTech Connect

    Kim, Keun Su

    2009-03-23

    The effect of a transverse magnetic field on the anodic arc root movement inside a dc plasma torch has been investigated. The arc voltage fluctuation, which represents the degree of the arc instability, was reduced to 28.6% of the original value and the high frequency components in the voltage signal also decreased in their magnitudes. The inherent arc instability in a dc thermal plasma torch seems to be suppressed by a diamagnetic effect of the arc column. Furthermore, the measured voltage wave forms indicated that the arc root attachment mode would be controllable by a transverse magnetic field.

  3. A study of the transient plasma potential in a pulsed bi-polar dc magnetron discharge

    NASA Astrophysics Data System (ADS)

    Bradley, J. W.; Karkari, S. K.; Vetushka, A.

    2004-05-01

    The temporal evolution of the plasma potential, Vp, in a pulsed dc magnetron plasma has been determined using the emissive probe technique. The discharge was operated in the 'asymmetric bi-polar' mode, in which the discharge voltage changes polarity during part of the pulse cycle. The probe measurements, with a time-resolution of 20 ns or better, were made along a line above the racetrack, normal to the plane of the cathode target, for a fixed frequency (100 kHz), duty cycle (50%), argon pressure (0.74 Pa) and discharge power (583 W). At all the measured positions, Vp was found to respond to the large and rapid changes in the cathode voltage, Vd, during the different phases of the pulse cycle, with Vp always more positive than Vd. At a typical substrate position (>80 mm from the target), Vp remains a few volts above the most positive surface in the discharge at all times. In the 'on' phase of the pulse, the measurements show a significant axial electric field is generated in the plasma, with the plasma potential dropping by a total of about 30 V over a distance of 70 mm, from the bulk plasma to a position close to the beginning of the cathode fall. This is consistent with measurements made in the dc magnetron. During the stable 'reverse' phase of the discharge, for distances greater than 18 mm from the target, the axial electric field is found to collapse, with Vp elevated uniformly to about 3 V above Vd. Between the target and this field-free region an ion sheath forms, and the current flowing to the target is still an ion current in this 'reverse' period. During the initial 200 ns of the voltage 'overshoot' phase (between 'on' and 'reverse' phases), Vd reached a potential of +290 V; however, close to the target, Vp was found to attain a much higher value, namely +378 V. Along the line of measurement, the axial electric field reverses in direction in this phase, and an electron current of up to 9 A flows to the target. The spatial and temporal measurements of Vp

  4. Effects of edge dc biasing on plasma rotation and transport in a toroidal geometry

    NASA Astrophysics Data System (ADS)

    Fredriksen, Åshild; Riccardi, Claudia; Magni, Simone

    2006-02-01

    We report results from experiments performed to study how a change in boundary conditions affects the plasma state in the toroidal geometry of the Blaamann device in Tromso. The boundary condition was changed by applying a dc bias on a limiter extended around the entire poloidal circumference of the plasma column. Two distinctly different plasma potential states were found. One state was associated with a bias at or negative with respect to the floating potential of the limiter, and a small ion-saturation current. The other state was associated with a positive bias with respect to the floating potential, near or in the electron saturation regime of the limiter. In the latter case the potential minimum in the middle of the cross-section was significantly less negative than in the case of ion-saturation current to the limiter. On the other hand, the grounded limiter provided the best confinement properties, for which the density maximum was significantly higher than for both more positive and more negative biases. This state also had the lowest fluctuation levels, and near zero poloidal velocities close to the boundaries, as well as the smallest radial, anomalous particle transport.

  5. Effects of Edge DC Biasing on Plasma Rotation and Transport in a Toroidal Geometry.

    NASA Astrophysics Data System (ADS)

    Fredriksen, Ashild; Riccardi, Claudia

    2005-10-01

    We report results from experiments performed to study how a change in boundary conditions is affecting the plasma states in the toroidal geometry of the Blaamann device in Tromso. The boundary condition was changed by applying a DC bias on a limiter extended around the entire poloidal circumference of the plasma column. Two distinctly different plasma potential states were found. One state was associated with a bias at or negative with respect to the floating potential of the limiter, and a small ion saturation current. The other state was associated with a positive bias with respect to the floating potential, near or in the electron saturation regime of the limiter. In the latter case the potential minimum in the middle of the cross-section was significantly less negative than in the case of ion-saturation current to the limiter. On the other hand, the grounded limiter provided the best confinement properties, for which the density maximum was significantly higher than for both more positive and more negative biases. This state also had the lowest fluctuation levels, and near zero poloidal velocities close to the boundaries, as well as the smallest radial, anomalous particle transport.

  6. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    NASA Astrophysics Data System (ADS)

    Glavin, Nicholas R.; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A.

    2015-04-01

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B+, B*, N+, N*, and molecular species including N2*, N2+, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N+ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N+ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.

  7. Characterization of undoped and Co doped ZnO nanoparticles synthesized by DC thermal plasma method

    NASA Astrophysics Data System (ADS)

    Nirmala, M.; Anukaliani, A.

    2011-02-01

    ZnO nanopowders doped with 5 and 10 at% cobalt were synthesized and their antibacterial activity was studied. Cobalt doped ZnO powders were prepared using dc thermal plasma method. Crystal structure and grain size of the particles were characterized by X-ray diffractometry and optical properties were studied using UV-vis spectroscopy. The particle size and morphology was observed by SEM and HRTEM, revealing rod like morphology. The antibacterial activity of undoped ZnO and cobalt doped ZnO nanoparticles against a Gram-negative bacterium Escherichia coli and a Gram-positive bacterium Bacillus atrophaeus was investigated. Undoped ZnO and cobalt doped ZnO exhibited antibacterial activity against both E. coli and Staphylococcus aureus but it was considerably more effective in the cobalt doped ZnO.

  8. Dusty plasma microparticle cloud control and rapid electrostatic mutual-repulsion expansion in a DC glow discharge

    NASA Astrophysics Data System (ADS)

    Gillman, Eric; Amatucci, Bill

    2016-10-01

    Microparticles in plasma discharges rapidly charge up, typically collecting a net negative charge due to the relatively high mobility of electrons compared to ions. Electrostatic forces can be utilized to control charged microparticle behavior and motion in a plasma discharge. In these experiments a metal wire loop is supplied with an electric potential that can be controlled independently from the DC plasma glow discharge electrodes. By varying the voltage on the wire loop, we can attract, trap, manipulate, suspend, and/or repel microparticles that originate from the DC glow discharge. Experiments studied the properties of electrostatic self-repulsion of a cloud of charged microparticles. By pulsing the plasma and controlling wire loop potential, a cloud of trapped microparticles is released and allowed to rapidly expand. A simple force balance simulation code is used as a model to compare and benchmark actual experimental results. This work was supported by the Naval Research Laboratory base program.

  9. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    SciTech Connect

    Wan, Yimao; Thomson, Andrew F.; Cuevas, Andres; McIntosh, Keith R.

    2015-01-26

    Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

  10. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory A.; Kapoor, Vik J.

    1991-01-01

    Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

  11. Tribological behaviors of diamond-like carbon coatings on plasma nitrided steel using three BN-containing lubricants

    NASA Astrophysics Data System (ADS)

    Jia, Zheng-feng; Wang, Peng; Xia, Yan-qiu; Zhang, Hao-bo; Pang, Xian-juan; Li, Bin

    2009-04-01

    In this work, diamond-like carbon (DLC) coatings were deposited on plasma nitrided AISI 1045 steel by magnetron sputtering. Three BN-containing additives and molybdenum dithiocarbamate (MoDTC) were added to poly-alpha-olefin (PAO) as additives. The additive content (mass fraction) in PAO was fixed at 0.5 wt%. The friction and wear characters of DLC coatings on nitrided steel discs sliding against AISI 52100 steel balls were tested under the lubricated conditions. It was found that borate esters have a higher load carrying capacity and much better anti-wear and friction-reducing ability than that of MoDTC. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to explore the properties of the worn surface and the mechanism of friction and wear. According to the XPS analysis, the adsorbed organic N-containing compounds and BN are, possibly, the primary reason for the novel borate esters to possess a relatively constant coefficient of friction and lower wear rate. On the other hand, possibly, the MoDTC molecules break down during sliding and produce many Mo-oxides, and then the Mo-oxides destroy the DLC coating because of its sharp edge crystalline solid structure. After destroying the DLC coating, the MoDTC react with metals and form MoS 2 tribofilm, and decrease coefficient of friction of rubbing pairs.

  12. Evolution of an electron energy distribution function in a weak dc magnetic field in solenoidal inductive plasma

    SciTech Connect

    Lee, Min-Hyong; Choi, Seong Wook

    2008-12-01

    We investigated the evolution of the electron energy distribution function (EEDF) in a solenoidal inductively coupled plasma surrounded by an axial dc magnetic field. The increase in the dc magnetic field caused the EEDF to evolve from a bi-Maxwellian to a Maxwellian distribution. At the discharge center, the number of low energy electrons was significantly reduced while the high energy electron population showed little change when a weak dc magnetic field was present. However, at the discharge radial boundary, the high energy electron population decreased significantly with the magnetic field while the change in low energy population was not prominent compared to the discharge boundary. These changes in EEDFs at the boundary and center of the discharge are due to the radial confinement and the restriction of radial transport of electrons by dc magnetic field.

  13. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  14. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    SciTech Connect

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe; Blasco, Nicolas

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  15. A study of structural and mechanical properties of nano-crystalline tungsten nitride film synthesis by plasma focus

    NASA Astrophysics Data System (ADS)

    Hussnain, Ali; Singh Rawat, Rajdeep; Ahmad, Riaz; Hussain, Tousif; Umar, Z. A.; Ikhlaq, Uzma; Chen, Zhong; Shen, Lu

    2015-02-01

    Nano-crystalline tungsten nitride thin films are synthesized on AISI-304 steel at room temperature using Mather-type plasma focus system. The surface properties of the exposed substrate against different deposition shots are examined for crystal structure, surface morphology and mechanical properties using X-ray diffraction (XRD), atomic force microscope, field emission scanning electron microscope and nano-indenter. The XRD results show the growth of WN and WN2 phases and the development of strain/stress in the deposited films by varying the number of deposition shots. Morphology of deposited films shows the significant change in the surface structure with different ion energy doses (number of deposition shots). Due to the effect of different ion energy doses, the strain/stress developed in the deposited film leads to an improvement of hardness of deposited films.

  16. Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Ku, Jui-Tai; Yang, Tsung-Hsi; Chang, Jet-Rung; Wong, Yuen-Yee; Chou, Wu-Ching; Chang, Chun-Yen; Chen, Chiang-Yao

    2010-04-01

    Strain-free gallium nitride (GaN) overgrowth on GaN nano-rods is realized by RF-plasma assisted molecular beam epitaxy (RF-MBE) on silicon (Si) substrate. The strain-free condition was identified by the strong free A exciton (FXA) photoluminescence (PL) peak at 3.478 eV and the E2 high phonon Raman shift of 567 cm-1. It is clearly demonstrated that the critical diameter of GaN nano-rods is around 80 nm for the overgrowth of strain-free GaN. The blue-shift of PL peak energy and phonon Raman energy with decreasing the diameter of nano-rod result from the strain relaxation of overgrowth GaN.

  17. Selective growth of boron nitride nanotubes by plasma-enhanced chemical vapor deposition at low substrate temperature

    NASA Astrophysics Data System (ADS)

    Guo, L.; Singh, R. N.

    2008-02-01

    Hexagonal boron nitride nanotubes (BNNTs) were synthesized at a low substrate temperature of 800 °C on nickel (Ni) coated oxidized Si(111) wafers in a microwave plasma-enhanced chemical vapor deposition system (MPCVD) by decomposition and reaction of gas mixtures consisting of B2H6-NH3-H2. The 1D BN nanostructures grew preferentially on Ni catalyst islands with a small thickness only. In situ mass spectroscopic analysis and optical emission spectroscopy were used to identify the gas reactions responsible for the BNNT formation. The morphology and structural properties of the deposits were analyzed by SEM, TEM, EDX, SAD and Raman spectroscopy. The growth mechanism of the BNNTs was identified.

  18. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    SciTech Connect

    Knoops, Harm C. M. E-mail: w.m.m.kessels@tue.nl; Peuter, K. de; Kessels, W. M. M. E-mail: w.m.m.kessels@tue.nl

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  19. Effect of a floating circular aperture on a dc glow discharge dusty plasma

    NASA Astrophysics Data System (ADS)

    Heinrich, Jonathon R.; Kim, Su-Hyun; Merlino, Robert L.

    2009-11-01

    We have investigated novel effects observed when a floating aperture, either 6 mm or 8 mm in diameter, is placed 1-2 cm in front of an anode disk (4 cm diameter) that is used to form a dc glow discharge dusty plasma. Dust is incorporated into the anode glow plasma from a tray located below the anode which contained kaolin powder. The glow discharge traps particles with an average size of 1 micron. When the aperture is placed in front of the disk, well-defined pear-shaped or spherical dust clouds are formed, depending on the diameter of the aperture and its distance from the anode. The dust interacts with the aperture through the potential structure associated with the floating (negative) plate in which the aperture is located. The dust cloud is imaged using a CCD camera and a thin sheet of 532 nm laser light. Some of the effects observed include: outwardly expanding spherical dust acoustic waves and shocks, dust rotation around a void formed at the aperture, and a dust/discharge instability in which the discharge is periodically quenched and reignited while the dust cloud expands and contracts, with the dust retaining a residual charge.

  20. Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, G. C.; Li, B.; Yan, Z. Q.; Liu, J.; Lu, F. X.; Ye, H.

    2012-06-01

    Self-standing diamond films were grown by DC Arcjet plasma enhanced chemical vapor deposition (CVD). The feed gasses were Ar/H2/CH4, in which the flow ratio of CH4 to H2 (F/F) was varied from 5% to 20%. Two distinct morphologies were observed by scanning electron microscope (SEM), i.e. the "pineapple-like" morphology and the "cauliflower-like" morphology. It was found that the morphologies of the as-grown films are strongly dependent on the flow ratio of CH4 to H2 in the feed gasses. High resolution transmission electron microscope (HRTEM) survey results revealed that there were nanocrystalline grains within the "pineapple-like" films whilst there were ultrananocrystalline grains within "cauliflower-like" films. X-ray diffraction (XRD) results suggested that (110) crystalline plane was the dominant surface in the "cauliflower-like" films whilst (100) crystalline plane was the dominant surface in the "pineapple-like" films. Raman spectroscopy revealed that nanostructured carbon features could be observed in both types of films. Plasma diagnosis was carried out in order to understand the morphology dependent growth mechanism. It could be concluded that the film morphology was strongly influenced by the density of gas phases. The gradient of C2 radical was found to be different along the growth direction under the different growth conditions.

  1. Effects of Ti-C:H coating and plasma nitriding treatment on tribological, electrochemical, and biocompatibility properties of AISI 316L.

    PubMed

    Kao, W H; Su, Y L; Horng, J H; Zhang, K X

    2016-08-01

    Ti-C:H coatings were deposited on original, nitrided, and polished-nitrided AISI 316L stainless steel substrates using a closed field unbalanced magnetron sputtering system. Sliding friction wear tests were performed in 0.89 wt.% NaCl solution under a load of 30 N against AISI 316L stainless steel, Si3N4, and Ti6Al4V balls, respectively. The electrochemical properties of the various specimens were investigated by means of corrosion tests performed in 0.89 wt.% NaCl solution at room temperature. Finally, the biocompatibility properties of the specimens were investigated by performing cell culturing experiments using purified mouse leukemic monocyte macrophage cells (Raw264.7). In general, the results showed that plasma nitriding followed by Ti-C:H coating deposition provides an effective means of improving the wear resistance, anti-corrosion properties, and biocompatibility performance of AISI 316L stainless steel.

  2. Combined complementary plasma diagnostics to characterize a 2f plasma with additional DC current with conditioning effects at the chamber wall

    NASA Astrophysics Data System (ADS)

    Klick, Michael; Rothe, Ralf; Baek, Kye Hyun; Lee, Eunwoo

    2016-09-01

    Multiple frequencies and DC current used in a low-pressure plasma rf discharge result in an increased complexity. This needs plasma diagnostics applied, in particular in a plasma process chamber. That is done under manufacturing conditions which restrict the applicable plasma diagnostics to non-invasive methods with small footprint. So plasma chamber parameters, optical emission spectroscopy (OES), and self-excited electron spectroscopy (SEERS) are used to characterize the plasma and to understand chamber wall conditioning effects in an Ar plasma. The parameters are classified according to their origin--the region they are representative for. The center ion density is estimated from the DC current and compared to the SEERS electron density reflecting the electron density close to that at the chamber wall. The conditioning effects are caused by Si sputtering at a Si wafer changing the chamber wall state only when the chamber is clean, subsequent plasmas in the same chamber are not affected in that way. Through the combination of the complementary methods it can be shown that the chamber wall condition finally changes the radial plasma density distribution. Also the heating of electrons in the sheath is shown to be influenced by conditioning effects.

  3. Inactivation of Microcystis aeruginosa by DC glow discharge plasma: Impacts on cell integrity, pigment contents and microcystins degradation.

    PubMed

    Zhang, Hong; Yang, Linfang; Yu, Zengliang; Huang, Qing

    2014-03-15

    We proposed a method to inactivate M. aeruginosa by using discharge plasma taking at the gas-solution interface supplied by DC power. Multiple analysis techniques including fluorescence excitation-emission matrix (EEM) and flow cytometry (FCM) were used to reveal the inactivation mechanism of M. aeruginosa. The photosynthetic pigment contents including phycocyanin, chlorophyll and metabolites were examined quantitatively. The DC glow discharge plasma caused an increased level of reactive oxygen species (ROS), and the damage of M. aeruginosa cells are mainly attributed to the oxidative stress including OH attack and H2O2 oxidation. Our findings demonstrate that plasma oxidation is a promising technology for inactivation of M. aeruginosa cells with simultaneous removal of microcystins and so it may lead us to a new route to efficient treatment of cyanobacterial blooms.

  4. Modeling and experimental validation of a 1.2 MW DC transferred well-type plasma torch

    NASA Astrophysics Data System (ADS)

    Chau, S. W.; Hsu, K. L.; Lin, D. L.; Chen, J. S.; Tzeng, C. C.

    2007-07-01

    This paper discusses the numerical modeling and experimental validation of a 1.2 MW DC transferred plasma torch, which is equipped with a well-type cathode (WTC). In order to investigate the complicated thermal and flow characteristics due to the interaction between the working gas and electric arc, the flow filed inside the plasma torch is modeled by the magnetic-hydrodynamic (MHD) equations. The governing equations are solved numerically using a finite volume discretization for both cold and hot flow simulations. The numerical simulations are then validated by experimental measurements at a specific operation condition. The predicted results successfully reflect some important features of the studied transferred WTC plasma torch.

  5. Advances and directions of ion nitriding/carburizing

    NASA Astrophysics Data System (ADS)

    Spalvins, Talivaldis

    1989-09-01

    Ion nitriding and carburizing are plasma activated thermodynamic processes for the production of case hardened surface layers not only for ferrous materials, but also for an increasing number of nonferrous metals. When the treatment variables are properly controlled, the use of nitrogenous or carbonaceous glow discharge medium offers great flexibility in tailoring surface/near-surface properties independently of the bulk properties. The ion nitriding process has reached a high level of maturity and has gained wide industrial acceptance, while the more recently introduced ion carburizing process is rapidly gaining industrial acceptance. The current status of plasma mass transfer mechanisms into the surface regarding the formation of compound and diffusion layers in ion nitriding and carbon build-up ion carburizing is reviewed. In addition, the recent developments in design and construction of advanced equipment for obtaining optimized and controlled case/core properties is summarized. Also, new developments and trends such as duplex plasma treatments and alternatives to dc diode nitriding are highlighted.

  6. Advances and directions of ion nitriding/carburizing

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis

    1989-01-01

    Ion nitriding and carburizing are plasma activated thermodynamic processes for the production of case hardened surface layers not only for ferrous materials, but also for an increasing number of nonferrous metals. When the treatment variables are properly controlled, the use of nitrogenous or carbonaceous glow discharge medium offers great flexibility in tailoring surface/near-surface properties independently of the bulk properties. The ion nitriding process has reached a high level of maturity and has gained wide industrial acceptance, while the more recently introduced ion carburizing process is rapidly gaining industrial acceptance. The current status of plasma mass transfer mechanisms into the surface regarding the formation of compound and diffusion layers in ion nitriding and carbon build-up ion carburizing is reviewed. In addition, the recent developments in design and construction of advanced equipment for obtaining optimized and controlled case/core properties is summarized. Also, new developments and trends such as duplex plasma treatments and alternatives to dc diode nitriding are highlighted.

  7. Linear and Nonlinear Dust Acoustic Waves, Shocks and Stationary Structures in a dc-Glow-Discharge Dusty Plasma

    NASA Astrophysics Data System (ADS)

    Merlino, Robert

    2011-10-01

    In 1990, Rao, Shukla, and Yu (Planet. Space Sci. 38, 543) predicted the existence of the dust acoustic (DA) wave, a low-frequency (~ few Hz), compressional dust density wave that propagates through a dusty plasma at a phase speed ~ several cm/s. The DA wave was first observed by Chu et. al., (J. Phys. D: Appl. Phys. 27, 296, 1994) in an rf-produced dusty plasma, and by Barkan et. al., (Barkan et. al. Phys. Plasmas 2, 2161, 1995) who obtained video images of the DA wave trains using light scattering from a dust suspension confined in an anodic glow discharge plasma formed within a Q machine plasma. The dispersion relation for DAWs was measured by Thompson et. al., (Phys. Plasmas 4, 2331, 1997) in a dc glow discharge dusty plasma by modulating the discharge current at a set frequency. DAWs have been investigated by many groups both in weakly-coupled and strongly-coupled dusty plasmas (E. Thomas, Jr., Contrib. Plasma Phys. 49, 316, 2009). In most experiments where DA waves are present, the wave amplitude is relatively high, indicating that they are nonlinear. In this talk, results of our recent experiments on DAWs will be presented. The following experiments, performed in a dc glow-discharge dusty plasma will be described: (1) Observations of spontaneously excited nonlinear, cylindrical DAWs, which exhibit confluence of waves propagating at different speeds. (2) Investigations of self-steepening DAWs that develop into DA shocks with thicknesses comparable to the interparticle separation (Heinrich et. al., Phys. Rev. Lett. 103, 115001, 2009). (3) Measurements of the linear growth rates of DAWs excited in merging dust clouds. (4) The formation of stationary, stable dust density structures appearing as non-propagating DAWs (Heinrich et. al., Phys. Rev. E, in press, 2011). This work was performed in collaboration with S. H. Kim, J. R. Heinrich, and J. K. Meyer. Work supported by DOE Grant No. DE-FG01-04ER54795

  8. Measurement of the Energy of Nitrogen Ions Produced in Filippov Type Plasma Focus Used for the Nitriding of Titanium

    NASA Astrophysics Data System (ADS)

    Ghareshabani, E.; Mohammadi, M. A.

    2012-12-01

    In this paper the nitrogen ion properties (maximum energy, current density and the most probable energy) are investigated by using Faraday cup in a time of flight method. These ions are produced in a Filippov type plasma focus (Sahand Facility) device and the Faraday cup was placed in a distance range of 18-24 cm from the top of the anode. Maximum and minimum most probable ion energies are 76 and 8.5 keV for the distance range of 18 and 24 cm, respectively. The displacement from 18 to 24 cm at top of the anode the ion current density varies from 4.5 × 106 to 3.2 × 105 (A m-2). For the investigation of the effect of ions bombardment of materials at different positions, at the optimum working conditions of 14 kV as a working voltage, and 0.25 Torr as a gas pressure, titanium samples are placed in a distance of 21, 22, 23 and 24 cm from the top of the anode (θ = 0) and each sample is put under irradiation for 30 plasma shots. The structure of the nitrided surfaces and their morphologies are characterized by X-ray diffractometry and by scanning electron microscopy, respectively. The average crystallite size deduced for (200) and (222) planes of TiN deposited with 30 shots in different distances are estimate to be from ~13 to ~38 nm.

  9. A review of the gas species activity and control of pulsed plasma technology during the nitriding, carburizing and carbonitriding processes

    SciTech Connect

    Pye, D.

    1995-12-31

    The control of gas activity and process technology has developed tremendously over the past two decades. While once considered to be primitive control systems using simple PID loops with thermocouples that were suspect and unable to perform repeatedly and consistently during the arduous process of plasma nitriding and processing, developments in recent years have elevated the control of the process into what might be considered one of the most controllable processes of the latter part of this century. The advent of plasma processing technology has improved control methods by observing and harnessing each of the various process parameters into many different combinations of control systems. Some of these control systems can control the complete function of the process, thus freeing the operator entirely for other duties, except that of load and unload, to the point where the operator is intimately involved with the process. Some of the control methods report from the process to a PLC through to a PC, and current developments rely entirely on computers and developed software shown on various screens. This presentation will review some of the more common process control methods, including that of highly developed PC systems.

  10. Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

    SciTech Connect

    Ni, Chih-Jui; Chau-Nan Hong, Franklin

    2014-05-15

    Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

  11. Self-sustained criterion with photoionization for positive dc corona plasmas between coaxial cylinders

    SciTech Connect

    Zheng, Yuesheng; Zhang, Bo He, Jinliang

    2015-06-15

    The positive dc corona plasmas between coaxial cylinders in air under the application of a self-sustained criterion with photoionization are investigated in this paper. A photon absorption function suitable for cylindrical electrode, which can characterize the total photons within the ionization region, is proposed on the basis of the classic corona onset criteria. Based on the general fluid model with the self-sustained criterion, the role of photoionization in the ionization region is clarified. It is found that the surface electric field keeps constant under a relatively low corona current, while it is slightly weakened with the increase of the corona current. Similar tendencies can be found under different conductor radii and relative air densities. The small change of the surface electric field will become more significant for the electron density distribution as well as the ionization activity under a high corona current, compared with the results under the assumption of a constant surface field. The assumption that the surface electric field remains constant should be corrected with the increase of the corona current when the energetic electrons with a distance from the conductor surface are concerned.

  12. Use of dc Ar microdischarge with nonlocal plasma for identification of metal samples

    SciTech Connect

    Kudryavtsev, A. A.; Stefanova, M. S.; Pramatarov, P. M.

    2015-04-07

    The possibility of using the collisional electron spectroscopy (CES) method for the detection of atoms from metal samples is experimentally verified. The detection and identification of metal atoms from a Pt sample in the nonlocal plasma of short (without positive column) dc Ar microdischarge at intermediate pressures (5–30 Torr) is realized in this work. Cathode sputtering is used for atomization of the metal under analysis. The identification of the analyzed metal is made from the energy spectra of groups of fast nonlocal electrons—characteristic electrons released in the Penning ionization of the Pt atoms by Ar metastable atoms and molecules. The acquisition of the electron energy spectra is performed using an additional electrode—a sensor located at the boundary of the discharge volume. The Pt characteristic Penning electrons form the maxima in the electron energy spectra at the energies of their appearance, which are 2.6 eV and 1.4 eV. From the measured energy of the maxima, identification of the metal atoms is accomplished. The characteristic Ar maxima due to pair collisions between Ar metastable atoms and molecules and super-elastic collisions are also recorded. This study demonstrates the possibility of creating a novel microplasma analyzer for atoms from metal samples.

  13. Investigation of multifractal nature of floating potential fluctuations obtained from a dc glow discharge magnetized plasma

    NASA Astrophysics Data System (ADS)

    Shaw, Pankaj Kumar; Saha, Debajyoti; Ghosh, Sabuj; Janaki, M. S.; Iyengar, A. N. Sekar

    2017-03-01

    In this paper, multifractal detrended fluctuation analysis (MF-DFA) has been used to analyze the floating potential fluctuations obtained with a Langmuir probe from a dc glow discharge magnetized plasma device. The generalized Hurst exponents (h(q)) , local fluctuation function (Fq(s)) , the Rényi exponents (τ(q)) and the multifractal spectrum F(α) have been calculated by applying the MF-DFA method. The result of the MF-DFA shows the multifractal nature of these fluctuations. We have investigated the influence of magnetic field on the multifractal nature of the fluctuations and it is seen that degree of multifractality is reduced with the increase in the magnetic field strength. The values of h(q) have been restricted between 0.7 and 1 for the magnetized fluctuations. This result is evidence of the existence of long-range correlations in the fluctuations. Furthermore, we employed shuffle and surrogate approaches to analyze the origins of multifractality. Comparing the MF-DFA results for the data set to those for shuffled and surrogate series, we have found that its multifractal nature is due to the existence of significant long-term correlation.

  14. Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

    NASA Astrophysics Data System (ADS)

    Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

    2011-09-01

    We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

  15. A path for synthesis of boron-nitride nanostructures in volume of arc plasma.

    PubMed

    Han, Longtao; Krstić, Predrag

    2017-02-17

    We find a possible channel for direct nanosynthesis of boron-nitride (BN) nanostructures, including growth of BN nanotubes from a mixture of BN diatomic molecules by quantum-classical molecular dynamics simulations. No catalyst or boron nanoparticle is needed for this synthesis, however the conditions for the synthesis of each of the nanostructures, such as temperature and flux of the BN feedstock are identified and are compatible with the conditions in an electric arc at high pressure. We also find that BN nanostructures can be synthetized by feeding a boron nanoparticle by BN diatomic molecules, however if hydrogen rich molecules like NH3 or HBNH are used as a feedstock, two-dimensional nanoflake stable structures are formed.

  16. A path for synthesis of boron-nitride nanostructures in volume of arc plasma

    NASA Astrophysics Data System (ADS)

    Han, Longtao; Krstić, Predrag

    2017-02-01

    We find a possible channel for direct nanosynthesis of boron-nitride (BN) nanostructures, including growth of BN nanotubes from a mixture of BN diatomic molecules by quantum-classical molecular dynamics simulations. No catalyst or boron nanoparticle is needed for this synthesis, however the conditions for the synthesis of each of the nanostructures, such as temperature and flux of the BN feedstock are identified and are compatible with the conditions in an electric arc at high pressure. We also find that BN nanostructures can be synthetized by feeding a boron nanoparticle by BN diatomic molecules, however if hydrogen rich molecules like NH3 or HBNH are used as a feedstock, two-dimensional nanoflake stable structures are formed.

  17. Scaled synthesis of boron nitride nanotubes, nanoribbons, and nanococoons using direct feedstock injection into an extended-pressure, inductively-coupled thermal plasma.

    PubMed

    Fathalizadeh, Aidin; Pham, Thang; Mickelson, William; Zettl, Alex

    2014-08-13

    A variable pressure (up to 10 atm) powder/gas/liquid injection inductively coupled plasma system has been developed and used to produce high-quality boron nitride nanotubes (BNNTs) at continuous production rates of 35 g/h. Under suitable conditions, collapsed BN nanotubes (i.e., nanoribbons), and closed shell BN capsules (i.e., nanococoons) are also obtained. The process is adaptable to a large variety of feedstock materials.

  18. Scaled Synthesis of Boron Nitride Nanotubes, Nanoribbons, and Nanococoons Using Direct Feedstock Injection into an Extended-Pressure, Inductively-Coupled Thermal Plasma

    NASA Astrophysics Data System (ADS)

    Fathalizadeh, Aidin; Pham, Thang; Mickelson, William; Zettl, Alex

    2015-03-01

    A variable pressure (up to 10 atm) powder or gas injection inductively coupled plasma system has been developed and used to produce high-quality boron nitride nanotubes (BNNTs) at continuous production rates of 35 g/h. Under suitable conditions, collapsed BN nanotubes (i.e., nanoribbons), and closed shell BN capsules (i.e., nanococoons) are also obtained. The process is adaptable to a large variety of feedstock materials.

  19. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    NASA Astrophysics Data System (ADS)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm‑2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  20. Development of a DC Glow Discharge Exhibit for the Demonstration of Plasma Behavior in a Magnetic Field

    NASA Astrophysics Data System (ADS)

    Bruder, Daniel

    2010-11-01

    The DC Glow Discharge Exhibit is intended to demonstrate the effects a magnetic field produces on a plasma in a vacuum chamber. The display, which will be featured as a part of The Liberty Science Center's ``Energy Quest Exhibition,'' consists of a DC glow discharge tube and information panels to educate the general public on plasma and its relation to fusion energy. Wall posters and an information booklet will offer brief descriptions of fusion-based science and technology, and will portray plasma's role in the development of fusion as a viable source of energy. The display features a horse-shoe magnet on a movable track, allowing viewers to witness the effects of a magnetic field upon a plasma. The plasma is created from air within a vacuum averaging between 100-200 mTorr. Signage within the casing describes the hardware components. The display is pending delivery to The Liberty Science Center, and will replace a similar, older exhibit presently at the museum.

  1. DC-driven plasma gun: self-oscillatory operation mode of atmospheric-pressure helium plasma jet comprised of repetitive streamer breakdowns

    NASA Astrophysics Data System (ADS)

    Wang, Xingxing; Shashurin, Alexey

    2017-02-01

    This paper presents and studies helium atmospheric pressure plasma jet comprised of a series of repetitive streamer breakdowns, which is driven by pure DC high voltage (self-oscillatory behavior). The repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV cm-1. One type of the helium plasma gun designed using this operational principle is demonstrated. The gun operates on about 3 kV DC high voltage and is comprised of the series of the repetitive streamer breakdowns at a frequency of about 13 kHz.

  2. An experimental study on discharge characteristics in a pulsed-dc atmospheric pressure CH3OH/Ar plasma jet

    NASA Astrophysics Data System (ADS)

    Qian, Muyang; Liu, Sanqiu; Yang, Congying; Pei, Xuekai; Lu, Xinpei; Zhang, Jialiang; Wang, Dezhen

    2016-10-01

    Recently, C/H/Ar plasma discharges found enormous potential and possibility in carbonaceous compounds conversion and production. In this work, a pulsed-dc CH3OH/Ar plasma jet generated at atmospheric pressure is investigated by means of optical and electrical diagnosis concerning the variation of its basic parameters, absolute concentration of OH radicals, and plasma temperature with different CH3OH/Ar volume ratios, in the core region of discharge with needle-to-ring electrode configuration. The voltage-current characteristics are also measured at different CH3OH/Ar ratios. Laser-induced fluorescence (LIF) results here show that only small amounts of added methanol vapor to argon plasma (about 0.05% CH3OH/Ar volume ratio) is favorable for the production of OH radicals. The optical emission lines of CH, CN, and C2 radicals have been detected in the CH3OH/Ar plasma. And, the plasma temperatures increase with successive amount of added methanol vapor to the growth plasma. Moreover, qualitative discussions are presented regarding the mechanisms for methanol dissociation and effect of the CH3OH component on the Ar plasma discharge at atmospheric pressure.

  3. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  4. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  5. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

    PubMed Central

    Park, Hamin; Kim, Tae Keun; Cho, Sung Woo; Jang, Hong Seok; Lee, Sang Ick; Choi, Sung-Yool

    2017-01-01

    Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface. PMID:28054603

  6. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-21

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  7. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  8. Boron nitride phosphide thin films grown on quartz substrate by hot-filament and plasma-assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.; Xu, S. Y.; Han, G. R.

    2004-10-01

    Boron nitride phosphide films are, for the first time, grown on transparent quartz substrate by hot filament and radio-frequency plasma co-assisted chemical vapor deposition technique. XPS, XRD, SEM, and UV measurements are performed to study the chemical composition, crystallization, microstructure, and optical absorption, respectively. A centipede-like microstructure and undulating ground morphology on the film surface are observed, and their growth mechanism is speculated upon. The chemical composition is determined as BN1-xPx, whose characteristic XRD peak is preliminarily identified. The optical band gap can be modulated between 5.52 eV and 3.74 eV, simply by adjusting the phosphorus content in BN1-xPx through modifying the PH3 flux during the film-deposition process. The merits of the BN1-xPx film, such as high ultraviolet photoelectric sensitivity with negligible sensitivity in the visible region, modifiable wide optical band gap, and good adhesion on transparent substrate, suggest potential applications for ultraviolet photo-electronics.

  9. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Park, Hamin; Kim, Tae Keun; Cho, Sung Woo; Jang, Hong Seok; Lee, Sang Ick; Choi, Sung-Yool

    2017-01-01

    Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

  10. Wear resistance of TiN(Ti2N)/Ti composite layer formed on C17200 alloy by plasma surface Ti-alloying and nitriding

    NASA Astrophysics Data System (ADS)

    Liu, L.; Shen, H. H.; Liu, X. Z.; Guo, Q.; Meng, T. X.; Wang, Z. X.; Yang, H. J.; Liu, X. P.

    2016-12-01

    The duplex treatment of plasma Ti-alloying and plasma nitriding was applied on the surface of C17200 alloy to improve its wear resistance. C17200 substrate was alloyed with Ti using double glow plasma alloying to form a Ti-alloyed layer in its surface, and then treated by plasma nitriding to make a TiN(Ti2N) alloying layer based on the Ti-alloyed surface. The microstructure and formation mechanism were studied by using GDOES, XRD and SEM. The hardness, tribological property and electrical conductivity of C17200 alloy after plasma alloying and nitriding were investigated by mean of micro-hardness tester, friction and wear testers as well as impedance analyzers. Modulus of elasticity and the adhesive strength of TiN(Ti2N)/Ti composite layer were evaluated by nano-indenter and scratch tester. The result shows that a TiN(Ti2N)-Ti-Be-Cu composite layer with a thickness of 27 μm is formed in the C17200 surface and is mainly composed of TiN, Ti2N, Cu(Ti) solid solution, etc. The composite alloying surface consists of the hard TiN(Ti2N)-rich layer on the top surface and Ti-Cu-Be diffusion layer, showing a strong adhesive strength with the C17200 substrate and a little decrease in the modulus of elasticity. A certain amount of Cu and Be together with TiN/Ti2N exists in the outmost, resulting in a better combination of wear resistance and conductive performance.

  11. Design and Development of High Voltage Direct Current (DC) Sources for the Solar Array Module Plasma Interaction Experiment

    NASA Technical Reports Server (NTRS)

    Bibyk, Irene K.; Wald, Lawrence W.

    1995-01-01

    Two programmable, high voltage DC power supplies were developed as part of the flight electronics for the Solar Array Module Plasma Interaction Experiment (SAMPIE). SAMPIE's primary objectives were to study and characterize the high voltage arcing and parasitic current losses of various solar cells and metal samples within the space plasma of low earth orbit (LEO). High voltage arcing can cause large discontinuous changes in spacecraft potential which lead to damage of the power system materials and significant Electromagnetic Interference (EMI). Parasitic currents cause a change in floating potential which lead to reduced power efficiency. These primary SAMPIE objectives were accomplished by applying artificial biases across test samples over a voltage range from -600 VDC to +300 VDC. This paper chronicles the design, final development, and test of the two programmable high voltage sources for SAMPIE. The technical challenges to the design for these power supplies included vacuum, space plasma effects, thermal protection, Shuttle vibrations and accelerations.

  12. Improved understanding and control of magnesium-doped gallium nitride by plasma assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Burnham, Shawn D.

    By an improved understanding of Mg-doped GaN through an exhaustive review of current limitations, increased control over the material was achieved by addressing several of these issues. To address the issues of the memory effect, low sticking coefficient and high vapor pressure of Mg, a new Mg dopant source was implemented, characterized and modeled for p-type doping of GaN. The device enhanced the sticking coefficient of Mg by energizing the outgoing Mg flux, and also allowed the first reported demonstration of an abrupt junction between two non-zero Mg concentrations and a graded Mg-doped GaN film. The significant compensation of Mg acceptors at high dopant concentrations was used advantageously to develop a new ex situ resistivity analysis technique using the energy distributions of SIMS to characterize doping of buried layers. The new technique was used to identify the barrier between conductive and resistive Mg doping for increased Mg concentration, which was then used to optimize Mg-doped GaN. Because Mg doping exhibits a dependence upon the growth regime, a new growth and regime characterization technique was developed using specific RHEED intensity responses to repeat growth conditions. During the development of this technique, a new surface kinetics growth model for III-nitrides was discovered based on DMS observations, which suggests preferential buildup of the metal bilayer before growth begins with an unfamiliar cation-anion exchange process initially upon metal shutter opening. Using the new RHEED growth and regime characterization technique, a new growth technique called metal modulated epitaxy (MME) was developed to increase repeatability, uniformity and smoothness. The MME technique was enhanced with a closed-loop control using real-time feedback from RHEED transients to control shutter transitions. This enhancement, called "smart shuttering," led to improved growth rate and further improvement of surface roughness and grain size, which were

  13. Effect of DC glow discharge plasma treatment on PET/TiO(2) thin film surfaces for enhancement of bioactivity.

    PubMed

    Navaneetha Pandiyaraj, K; Selvarajan, V; Rhee, Young Ha; Kim, Hyoung Woo; Pavese, Matteo

    2010-08-01

    In this paper, the surfaces of PET/TiO(2) thin film were modified by DC glow discharge plasma as a function of discharge potentials for improving the bioactivity. The hydrophilicity of the plasma-treated PET/TiO(2) film was measured by contact angle measurement and the surface energy was estimated by using Fowkes method. The structural and chemical composition of the plasma-treated PET/TiO(2) was analysed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Immersion in a simulated body solution (SBF) solution was used to evaluate the bioactivity of the plasma-treated PET/TiO(2) samples in vitro. It was found that the plasma treatment modified the surfaces both in chemical composition and crystallinity which makes surface of the PET/TiO(2) to become more hydrophilic compared with untreated one. Analytical and microstructural investigations of SBF results, showed considerable higher rates of apatite formation on the plasma-treated PET/TiO(2) compared to the untreated films.

  14. Synergistic damage mechanism of corrosion and cavitation-erosion for plasma ion nitrided 18Cr-8Ni-1.1Mn-0.43C stainless steel in seawater

    NASA Astrophysics Data System (ADS)

    Chong, Sang-Ok; Kim, Seong-Jong

    2017-01-01

    In this work, it was investigated that resistance of combination damages of electrochemical corrosion and cavitation-erosion for plasma ion nitrided 18Cr-8Ni-1.1Mn-0.43C stainless steel at various process temperatures under cavitation environment in seawater. The plasma ion nitriding treatment was performed with a gas mixture ratio of 25% N2 and 75% H2 at a temperature of 623, 673, 723, and 773 K for 10 h, at a chamber pressure of 250 Pa. Expanded austenite (γN) was produced at whole plasma ion nitriding temperatures and especially phases of CrN and γ‧ were observed at 773 K in X-ray diffraction (XRD) analysis. In Tafel analysis, the highest corrosion potential and corrosion current density were analyzed on the untreated (non-cavitation) specimen among specimens under the cavitation condition. Under cavitation environment, the highest corrosion potential and the lowest corrosion current density presented at 673 K. As a result of observation of surface morphologies after anodic polarization experiment under cavitation environment, uniform corrosion was observed on the untreated specimen and plasma ion nitrided specimens, while localized corrosion was shown on the untreated substrate under non-cavitation environment. Furthermore, greater damage depth and severe morphologies were observed at plasma ion nitrided specimens than untreated substrate, whereas the greatest weight loss at 723 K was indicated due to the high pitting corrosion potential and wide passivity potential region.

  15. Effect of process parameters on properties of argon–nitrogen plasma for titanium nitride film deposition

    SciTech Connect

    Saikia, Partha; Kakati, Bharat

    2013-11-15

    In this study, the effect of working pressure and input power on the physical properties and sputtering efficiencies of argon–nitrogen (Ar/N{sub 2}) plasma in direct current magnetron discharge is investigated. The discharge in Ar/N{sub 2} is used to deposit TiN films on high speed steel substrate. The physical plasma parameters are determined by using Langmuir probe and optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. A prominent change of electron temperature, electron density, ion density, and degree of ionization of Ar is found as a function of working pressure and input power. The results also show that increasing working pressure exerts a negative effect on film deposition rate while increasing input power has a positive impact on the same. To confirm the observed physical properties and evaluate the texture growth as a function of deposition parameters, x-ray diffraction study of deposited TiN films is also done.

  16. Analysis of processes in DC arc plasma torches for spraying that use air as plasma forming gas

    NASA Astrophysics Data System (ADS)

    Frolov, V.; Ivanov, D.; Toropchin, A.

    2014-11-01

    Developed in Saint Petersburg State Polytechnical University technological processes of air-plasma spraying of wear-resistant, regenerating, hardening and decorative coatings used in number of industrial areas are described. The article contains examples of applications of air plasma spraying of coatings as well as results of mathematical modelling of processes in air plasma torches for spraying.

  17. Effect of Low Pressure Nitrogen DC Plasma on Optical Properties of Biaxial-Oriented Polypropylene (BOPP), Poly Methyl Methacrylate (PMMA) and Poly Vinyl Chloride (PVC) Films

    NASA Astrophysics Data System (ADS)

    Mortazavi, S. H.; Ghoranneviss, M.; Faryadras, S.

    2012-06-01

    In this paper properties of Biaxial-Oriented Polypropylene, Poly Vinyl Chloride and Poly Methyl Methacrylate samples treated by DC glow discharge of N2 plasma have been investigated by UV-Vis_NIR spectrophotometer. It was found that plasma treatment change chemical structure of polymer surfaces. In addition, absorption coefficient, refractive index and extinction coefficient of all treated samples have been slightly changed.

  18. Study of Martensite Ageing with Plasma Ion Nitriding of Steel C300 Using Design of an Experiment

    NASA Astrophysics Data System (ADS)

    Gezicioglu, Yavuz; Inal, Osman Tugay

    2014-09-01

    Double treatment of maraging steel C300 (nitriding + ageing) is studied using experimental design with a full 32 factorial matrix. After this treatment maximum surface hardness is 1270 HV and for the core it is 553 HV.

  19. Enhanced electron-hole plasma stimulated emission in optically pumped gallium nitride nanopillars

    NASA Astrophysics Data System (ADS)

    Lo, M.-H.; Cheng, Y.-J.; Kuo, H.-C.; Wang, S.-C.

    2011-03-01

    An enhanced stimulated emission was observed in optically pumped GaN nanopillars. The nanopillars were fabricated from an epitaxial wafer by patterned pillar etching followed by crystalline regrowth. Under optical excitation, a strong redshifted stimulated emission peak emerged from a broad spontaneous emission background. The emission is attributed to the electron-hole plasma gain at high carrier density. The emission slope efficiency was greatly enhanced by 20 times compared with a GaN substrate under the same pumping condition. The enhancement is attributed to the better photon and gain interaction from the multiple scattering of photons among nanopillars.

  20. Electron field emission enhancement of carbon nanowalls by plasma surface nitridation

    NASA Astrophysics Data System (ADS)

    Takeuchi, Wakana; Kondo, Hiroki; Obayashi, Tomomi; Hiramatsu, Mineo; Hori, Masaru

    2011-03-01

    Carbon nanowalls (CNWs) are two-dimensional carbon nanostructures consisting of stacked graphene sheets standing vertically on the substrate. The sharp edges of CNWs provide us with opportunities for applications as electron field emitter arrays. The effects of nitrogen plasma (NP) treatment on the surface of CNWs have been investigated in order to improve the electron field emission properties. The electron emission current from the edges of CNWs was drastically increased by the NP treatment. Morphological and chemical changes in the CNWs after the NP treatment were characterized using scanning electron microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy.

  1. Enhancement of the crystalline Ge film growth by inductively coupled plasma-assisted pulsed DC sputtering.

    PubMed

    Kim, Eunkyeom; Han, Seung-Hee

    2014-11-01

    The effect of pulsed DC sputtering on the crystalline growth of Ge thin film was investigated. Ge thin films were deposited on the glass substrates using ICP-assisted pulsed DC sputtering. The Ge target was sputtered using asymmetric bipolar pulsed DC sputtering system with and without assistance of ICP source. The pulse frequency of 200 Hz and the pulse on time of 500 μsec (duty cycle = 10%) were kept during sputtering process. Crystal structures were studied from X-ray diffraction. The X-ray diffraction patterns clearly showed crystalline film structures. The Ge thin films with randomly oriented crystalline were obtained using pulsed DC sputtering without ICP, whereas they had well aligned (220) orientation crystalline using ICP source. Moreover, the combination of ICP assistance and pulsed DC sputtering enhanced the growth of crystalline Ge thin films without hydrogen and metal by in situ deposition. The structure and lattice of the films were studied from TEM images. The cross-sectional TEM images revealed the deposited Ge films with columnar structure.

  2. X-ray absorption and photoelectron spectroscopic study of plasma-nitrided SiO{sub 2} film

    SciTech Connect

    Song, H.J.; Shin, H.J.; Chung, Youngsu; Lee, J.C.; Lee, M.K.

    2005-06-01

    Plasma-nitrided SiO{sub 2} thin film has been analyzed by synchrotron-radiation-based x-ray absorption and photoelectron spectroscopies (XAS and XPS). High-resolution N 1s XAS and N 1s, O 1s, and Si 2p XPS spectral changes were obtained for different annealing temperatures. N 1s XPS and XAS spectra show that at room temperature, besides the main species of N[Si(O-){sub 3-x}]{sub 3}, there exist free moleculelike N{sub 2} and HN[Si(O-){sub 3}]{sub 2}, H{sub 2}NSi(O-){sub 3}, and N-Si{sub 2}O species with surface contaminants. The spectral intensities of the N{sub 2} and the HN[Si(O-){sub 3}]{sub 2}, H{sub 2}NSi(O-){sub 3}, and N-Si{sub 2}O species decrease as the annealing temperature increases, and finally the nitrogen exists dominantly in the form of N[Si(O){sub 3}]{sub 3} species above 820 K, indicating out-diffusion of molecular N{sub 2} and structural reconstruction to form a stable structure upon annealing. The Si 2p and O 1s XPS spectra show that Si{sup >4+} 2p peak and O 1s peak appear at 103.7 and 534.0 eV, respectively, which are higher binding energies than those of thermally grown oxynitride films with lower coverage on silicon. Upon annealing the sample, these peaks shift towards lower binding energy; {approx}0.3 eV for Si{sup >4+} and 0.4 eV for O 1s. The causes of the peaks appearance at relatively higher binding energy and the peak shift upon annealing are discussed.

  3. Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Oye, Michael M.; Mattord, Terry J.; Hallock, Gary A.; Bank, Seth R.; Wistey, Mark A.; Reifsnider, Jason M.; Ptak, Aaron J.; Yuen, Homan B.; Harris, James S.; Holmes, Archie L.

    2007-11-01

    This letter studies the effects of atomic N, metastable N2*, and ionic species on the optical properties of dilute nitride materials. Ga0.8In0.2N0.01As0.99 was grown using a 1% N2 in Ar gas mix from an Applied-Epi Unibulb™ rf plasma source. Isonitrogen samples with and without ions were studied using various plasma operating conditions. Optical emission spectrometry was used to characterize relative proportions of different active nitrogen plasma species (atomic N and metastable N2*). Samples grown without ions and with a higher proportion of atomic N resulted in the best overall material quality, although this improvement was observed at high annealing temperatures. At lower annealing temperatures, increased blueshifts were observed for samples grown with a higher proportion of atomic N; however, there was no noticeable influence of ions on blueshift regardless of whether atomic N or metastable N2* was the dominant species present in the plasma. The key implication of this work is that it helps to elucidate a possible reason for some of the contradictory reports in the literature. The ions are not solely responsible for the commonly reported "plasma damage." Furthermore, we demonstrate herein that atomic N and metastable N2* each have different effects on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy.

  4. Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Lo, Wen-Cheng; Wu, Shien-Yang; Chang, Sun-Jay; Chiang, Mu-Chi; Lin, Chih-Yung; Chao, Tien-Sheng; Chang, Chun-Yen

    2007-03-01

    In this study, we compared the effects of negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) on the core and input/output (I/O) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) fabricated using the different gate dielectrics of plasma nitrided oxide (PNO) and thermally nitrided oxide (TNO). The mobility and constant overdrive current of the PMOSFETs fabricated using PNO as a gate oxide material are about 30 and 23% higher than those of the devices fabricated using TNO, respectively. The core PMOSFETs fabricated using PNO show a better NBTI and HCI immunity than those fabricated using TNO owing to the lower nitrogen concentration at the SiO2/Si-substrate interface. However, the I/O PMOSFETs fabricated using PNO show a higher HCI-induced degradation rate because of a higher oxide bulk trap density but a better NBTI than the devices fabricated using TNO at a normal stressed bias due to a low interface trap density.

  5. Polarity functions' characterization and the mechanism of starch modification by DC glow discharge plasma.

    PubMed

    Khorram, S; Zakerhamidi, M S; Karimzadeh, Z

    2015-01-01

    The wheat starch was investigated, before and after exposure to the argon and oxygen glow discharge plasma, without any added chemical reagents, using a novel media polarity functions method. The mechanisms of modification of starch in plasma discharge irradiation were explained using some methods such as; NMR, IR spectroscopy, Kamlet-Abboud-Taft polarity functions (specific and nonspecific interaction) of modified starch. The starch modification, by plasma treatment, shows valuable changes with plasma gas and relative ionized or active species. Characterizations indicate that argon glow discharge plasma increases crosslink in C-2 site of starch. Also, oxygen plasma discharge irradiation tends to oxidize the OH group in C-6 site of carbonyl group. Furthermore, the reported mechanisms show the highest efficiency, because of the stereo-chemical orientation of active sites of starch and plasma potential of wall in plasma media.

  6. Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

    PubMed

    Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

    2015-10-14

    Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred

  7. Frictional and structural characterization of ion-nitrided low and high chromium steels

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1985-01-01

    Low Cr steels AISI 41410, AISI 4340, and high Cr austenitic stainless steels AISI 304, AISI 316 were ion nitrided in a dc glow discharge plasma consisting of a 75 percent H2 - 25 percent N2 mixture. Surface compound layer phases were identified, and compound layer microhardness and diffusion zone microhardness profiles were established. Distinct differences in surface compound layer hardness and diffusion zone profiles were determined between the low and high Cr alloy steels. The high Cr stainless steels after ion nitriding displayed a hard compound layer and an abrupt diffusion zone. The compound layers of the high Cr stainless steels had a columnar structure which accounts for brittleness when layers are exposed to contact stresses. The ion nitrided surfaces of high and low Cr steels displayed a low coefficient of friction with respect to the untreated surfaces when examined in a pin and disk tribotester.

  8. Optical emission spectroscopy of 50 Hz pulsed dc nitrogen-hydrogen plasma in the presence of active screen cage

    NASA Astrophysics Data System (ADS)

    Saeed, A.; Abrar, M.; Khan, A. W.; Jan, F.; Khan, B. S.; Shah, H. U.; Zaka-ul-Islam, M.; Zakaullah, M.

    2016-05-01

    The N2-H2 plasma gas mixture, generated in a 50 Hz pulsed dc discharge system with active screen cage, is characterized by optical emission spectroscopy (OES), as a function of gas pressure, the fractions of hydrogen and current density. The N2 dissociation degree and N atomic density was measured with actinometery where argon gas is used as actinometer. It was shown that the increase in hydrogen fraction enhances the dissociation of N2, until the maximum of 40%. The excitation temperature is determined from Ar-I emission line intensities by using the simple Boltzmann plot method. The dissociation fraction and excitation temperature is found to increase with hydrogen mixing in nitrogen plasma.

  9. Hysteresis in amplitudes of self-excited oscillations for co-axial electrode-geometry DC glow discharge plasma

    SciTech Connect

    Kumar, R.; Narayanan, R.; Prasad, Awadhesh

    2014-12-15

    Hysteresis in amplitudes of the self-excited oscillations of the floating potential and discharge current is observed in an unmagnetized co-axial electrode-geometry DC glow discharge plasma system. The nonlinearities of these oscillations are studied using standard dynamical analysis tools. The characterization revealed the transition of low-amplitude high-frequency period-n oscillations to a large amplitude low frequency period-1 oscillations through a chaotic intermediate route. The transition of the low amplitude, high frequency period-n oscillations to chaotic type is observed to be linked to the dynamical change in the plasma system, i.e., after a negative differential resistance (NDR) region, whereas the transition from chaotic to period-1 is observed to be linked to a discharge current threshold.

  10. Determination of dissolved boron in fresh, estuarine, and geothermal waters by d.c. argon-plasma emission spectrometry

    USGS Publications Warehouse

    Ball, J.W.; Thompson, J.M.; Jenne, E.A.

    1978-01-01

    A d.c. argon-plasma emission spectrometer is used to determine dissolved boron in natural (fresh and estuarine) water samples. Concentrations ranged from 0.02 to 250 mg l-1. The emission-concentration function is linear from 0.02 to 1000 mg l-1. Achievement of a relative standard deviation of ??? 3% requires frequent restandardization to offset sensitivity changes. Dilution may be necessary to overcome high and variable electron density caused by differences in alkali-metal content and to avoid quenching of the plasma by high solute concentrations of sodium and other easily ionized elements. The proposed method was tested against a reference method and found to be more sensitive, equally or more precise and accurate, less subject to interferences, with a wider linear analytical range than the carmine method. Analyses of standard reference samples yielded results in all cases within one standard deviation of the means. ?? 1978.

  11. Hysteresis in amplitudes of self-excited oscillations for co-axial electrode-geometry DC glow discharge plasma

    NASA Astrophysics Data System (ADS)

    Kumar, R.; Narayanan, R.; Prasad, Awadhesh

    2014-12-01

    Hysteresis in amplitudes of the self-excited oscillations of the floating potential and discharge current is observed in an unmagnetized co-axial electrode-geometry DC glow discharge plasma system. The nonlinearities of these oscillations are studied using standard dynamical analysis tools. The characterization revealed the transition of low-amplitude high-frequency period-n oscillations to a large amplitude low frequency period-1 oscillations through a chaotic intermediate route. The transition of the low amplitude, high frequency period-n oscillations to chaotic type is observed to be linked to the dynamical change in the plasma system, i.e., after a negative differential resistance (NDR) region, whereas the transition from chaotic to period-1 is observed to be linked to a discharge current threshold.

  12. Catastrophic instabilities of modified DA-DC hybrid surface waves in a semi-bounded plasma system

    NASA Astrophysics Data System (ADS)

    Lee, Myoung-Jae; Jung, Young-Dae

    2016-06-01

    We find the catastrophic instabilities and derive the growth rates for the dust-cyclotron resonance (DCR) and dust-rotation resonance (DRR) modes of the modified dust-acoustic and dust-cyclotron (DA-DC) hybrid surface waves propagating at the plasma-vacuum interface where the plasma is semi-bounded and composed of electrons and rotating dust grains. The effects of magnetic field and dust rotation frequency on the DCR- and DDR-modes are also investigated. We find that the dust rotation frequency enhances the growth rate of DCR-mode and the effect of dust rotation on this resonance mode decreases with an increase of the wave number. We also find that an increase of magnetic field strength enhances the DCR growth rate, especially, for the short wavelength regime. In the case of DRR-mode, the growth rate is found to be decreased less sensitively with an increase of the wave number compared with the case of DCR, but much significantly enhanced by an increase of dust rotation frequency. The DRR growth rate also decreases with an increase of the magnetic field strength, especially in the long wavelength regime. Interestingly, we find that catastrophic instabilities occur for both DCR- and DRR-modes of the modified DA-DC hybrid surface waves when the rotational frequency is close to the dust-cyclotron frequency. Both modes can also be excited catastrophically due to the cooperative interaction between the DCR-mode and the DRR-mode.

  13. Structural evolution of Ti destroyable interlayer in large-size diamond film deposition by DC arc plasma jet

    NASA Astrophysics Data System (ADS)

    Guo, Jianchao; Li, Chengming; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Hua, Chenyi; Yan, Xiongbo

    2016-05-01

    The addition of titanium (Ti) interlayer was verified to reduce the residual stress of diamond films by self-fracturing and facilitate the harvest of a crack-free free-standing diamond film prepared by direct current (DC) arc plasma jet. In this study, the evolution of the Ti interlayer between large-area diamond film and substrate was studied and modeled in detail. The evolution of the interlayer was found to be relevant to the distribution of the DC arc plasma, which can be divided into three areas (arc center, arc main, and arc edge). The formation rate of titanium carbide (TiC) in the arc main was faster than in the other two areas and resulted in the preferred generation of crack in the diamond film in the arc main during cooling. Sandwich structures were formed along with the growth of TiC until the complete transformation of the Ti interlayer. The interlayer released stress via self-fracture. Avoiding uneven fragile regions that formed locally in the interlayer and achieving cooperatively released stress are crucial for the preparation of large crack-free diamond films.

  14. Dc to ac field conversion due to leaky-wave excitation in a plasma slab behind an ionization front

    NASA Astrophysics Data System (ADS)

    Kostin, V. A.; Vvedenskii, N. V.

    2015-03-01

    We present a way for generating coherent tunable electromagnetic radiation through dc to ac field conversion by an ionization front. The conversion is caused by the excitation of leaky waves behind the transversely limited ionization front propagating in a uniform electrostatic field. This differs significantly from the well-known dc-to-ac-radiation-converter models which consider Doppler-like frequency conversion by a transversely unlimited ionization front propagating in a spatially periodic electric field. We explore the dispersion properties and excitation of these leaky waves radiated through the transverse plasma boundary at the Cherenkov angle to the direction of propagation of a superluminal ionization front as dependent on the parameters of the plasma produced and on the speed of the ionization front. It is shown that not only the center frequency but also the duration and waveform of the generated pulse may significantly depend on the speed of the ionization front. The results indicate the possibility of using such converters based on planar photoconductive antennas to create sources of microwave and terahertz radiation with controllable waveforms that are transformed from video to radio pulse when the angle of incident ionizing radiation is tuned.

  15. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

    PubMed Central

    Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K.; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

    2014-01-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5–3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm2) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications. PMID:25241800

  16. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

    NASA Astrophysics Data System (ADS)

    Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K.; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

    2014-09-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5-3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm2) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications.

  17. Efficiency of plasma density control with dc discharge and magnetic field for different surface types in low pressure hypersonic flow

    NASA Astrophysics Data System (ADS)

    Schweigert, Irina

    2013-09-01

    Recently the problem of communication blackout during reentrant flight still remains unsolved. The spacecrafts enter the upper atmospheric layers with a hypersonic speed and the shock heated air around them becomes weakly ionized. The gas ionization behind the shock front is associative in nature and occurs through chemical reactions between fragments of molecules. The formation of a plasma layer near the surfaces of spacecraft causes serious problems related to the blocking of communication channels with the Earth and other spacecrafts. A promising way of restoring the radio communications is the application of electrical and magnetic fields for controlling the plasma layer parameters. Nevertheless the flux of electrons and ions on the surface charges it that essentially decrease the effect of electro-magnetic control of local plasma density. In Ref. it is shown that there is the way to remove the surface charge using the lateral diode string structures. Based on two dimensional kinetic Particle in cell Monte Carlo collision simulations, we study the possibility of local control the plasma layer parameters near a flat surface of two different types. The gas velocity distribution is set with a model profile. We apply DC voltage up to 4 kV and magnetic field B up to 200 G.

  18. Dust particle circulation and vortices in a dc glow discharge dusty plasma

    NASA Astrophysics Data System (ADS)

    Kish, Ayden; Thomas, Edward

    2016-10-01

    Complex, or dusty, plasmas introduce a new charged species - dust grains of up to a few microns in diameter - to the dynamics of a background plasma discharge. While the size of these dust grains allow us to observe many plasma phenomena macroscopically, their presence also results in the generation of other processes that are unique to dusty plasmas. This presentation reports the observations of a recent study of toroidally-shaped dust clouds in a direct-current Argon plasma discharge. These dusty plasma clouds are formed by placing a conducting ring on a lower electrode while generating the plasma using an upper, biased electrode. Dust particles become suspended in the plasma between the two electrodes and, under the correct pressure and discharge conditions, the toroidally-shaped cloud is formed. This work reports on a variety of experimental configurations used to generate the clouds, measurements of particle flow and rotation using particle image velocimetry (PIV), and initial characterization of the plasma conditions that lead to the formation of these structures. Auburn University Undergraduate Research Fellowship and U.S. Department of Energy Grant Number DE-SC0010485.

  19. Plasticity and ab initio characterizations on Fe 4N produced on the surface of nanocrystallized 18Ni-maraging steel plasma nitrided at lower temperature

    NASA Astrophysics Data System (ADS)

    Yan, M. F.; Wu, Y. Q.; Liu, R. L.

    2009-08-01

    18Ni-maraging steel has been entirely nanocrystallized by a series of processes including solution treatment, hot-rolling deformation, cold-drawn deformation and direct electric heating. The plasma nitriding of nanocrystallized 18Ni-maraging steel was carried out at 410 °C for 3 h and 6 h in a mixture gas of 20% N 2 + 80% H 2 with a pressure of 400 Pa. The surface phase constructions and nitrogen concentration profile in surface layer were analyzed using an X-ray diffractometer (XRD) and the glow discharge spectrometry (GDS), respectively. The results show that an about 2 μm thick compound layer (mono-phase γ'-Fe 4N) can be produced on the top of the surface layer of nanocrystallized 18Ni-maraging steel plasma nitrided at 410 °C for 6 h. The measured hardness value of the nitrided surface is 11.6 GPa. More importantly, the γ'-Fe 4N phase has better plasticity, i.e., its plastic deformation energy calculated from the load-displacement curve obtained by nano-indentation tester is close to that of nanocrystallized 18Ni-maraging steel. Additionally, the mechanical properties of γ'-Fe 4N phase were also characterized by first-principles calculations. The calculated results indicate that the hardness value and the ratio of bulk to shear modulus ( B/ G) of the γ'-Fe 4N phase are 10.15 GPa and 3.12 (>1.75), respectively. This demonstrates that the γ'-Fe 4N phase has higher hardness and better ductility.

  20. Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

    SciTech Connect

    Burke, Micheal Blake, Alan; Povey, Ian M.; Schmidt, Michael; Petkov, Nikolay; Carolan, Patrick; Quinn, Aidan J.

    2014-05-15

    A design of experiments methodology was used to optimize the sheet resistance of titanium nitride (TiN) films produced by plasma-enhanced atomic layer deposition (PE-ALD) using a tetrakis(dimethylamino)titanium precursor in a N{sub 2}/H{sub 2} plasma at low temperature (250 °C). At fixed chamber pressure (300 mTorr) and plasma power (300 W), the plasma duration and N{sub 2} flow rate were the most significant factors. The lowest sheet resistance values (163 Ω/sq. for a 20 nm TiN film) were obtained using plasma durations ∼40 s, N{sub 2} flow rates >60 standard cubic centimeters per minute, and purge times ∼60 s. Time of flight secondary ion mass spectroscopy data revealed reduced levels of carbon contaminants in the TiN films with lowest sheet resistance (163 Ω/sq.), compared to films with higher sheet resistance (400–600 Ω/sq.) while transmission electron microscopy data showed a higher density of nanocrystallites in the low-resistance films. Further significant reductions in sheet resistance, from 163 Ω/sq. to 70 Ω/sq. for a 20 nm TiN film (corresponding resistivity ∼145 μΩ·cm), were achieved by addition of a postcycle Ar/N{sub 2} plasma step in the PE-ALD process.

  1. Development of metal nanocluster ion source based on dc magnetron plasma sputtering at room temperature.

    PubMed

    Majumdar, Abhijit; Köpp, Daniel; Ganeva, Marina; Datta, Debasish; Bhattacharyya, Satyaranjan; Hippler, Rainer

    2009-09-01

    A simple and cost effective nanocluster ion source for the deposition of size selected metal nanocluster has been developed based on the dc magnetron discharge (including pulsed dc discharge). The most important and interesting feature of this cluster source is that it is working at room temperature, cooled by chilled water during the experiment. There is no extraction unit in this device and the cluster streams flow only due to the pressure gradient from source chamber to substrate via quadrupole mass filter. It has provision of multiple substrate holders in the deposition chamber, which can be controlled manually. The facility consists of quadrupole mass filter (QMF 200), which can select masses in the range of 2-125 000 atoms depending on the target materials, with a constant mass resolution (M/DeltaM approximately 25). The dc magnetron discharge at a power of about 130 W with Ar as feed/buffer gas was used to produce the Cu nanocluster in an aggregation tube and deposited on Si (100) wafer temperature.

  2. Numerical and experimental study on a pulsed-dc plasma jet

    NASA Astrophysics Data System (ADS)

    Liu, X. Y.; Pei, X. K.; Lu, X. P.; Liu, D. W.

    2014-06-01

    A numerical and experimental study of plasma jet propagation in a low-temperature, atmospheric-pressure, helium jet in ambient air is presented. A self-consistent, multi-species, two-dimensional axially symmetric plasma model with detailed finite-rate chemistry of helium-air mixture composition is used to provide insights into the propagation of the plasma jet. The obtained simulation results suggest that the sheath forms near the dielectric tube inner surface and shields the plasma channel from the tube surface. The strong electric field at the edge of the dielectric field enhances the ionization in the air mixing layer; therefore, the streamer head becomes ring-shaped when the streamer runs out of the tube. The avalanche-to-streamer transition is the main mechanism of streamer advancement. Penning ionization dominates the ionization reactions and increases the electrical conductivity of the plasma channel. The simulation results are supported by experimental observations under similar discharge conditions.

  3. Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

    NASA Astrophysics Data System (ADS)

    Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

    2007-04-01

    The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

  4. Streptococci biofilm decontamination on teeth by low-temperature air plasma of dc corona discharges

    NASA Astrophysics Data System (ADS)

    Kovalóvá, Z.; Zahoran, M.; Zahoranová, A.; Machala, Z.

    2014-06-01

    Non-thermal plasmas of atmospheric pressure air direct current corona discharges were investigated for potential applications in dental medicine. The objective of this ex vivo study was to apply cold plasmas for the decontamination of Streptococci biofilm grown on extracted human teeth, and to estimate their antimicrobial efficiency and the plasma's impact on the enamel and dentine of the treated tooth surfaces. The results show that both positive streamer and negative Trichel pulse coronas can reduce bacterial population in the biofilm by up to 3 logs in a 10 min exposure time. This bactericidal effect can be reached faster (within 5 min) by electrostatic spraying of water through the discharge onto the treated tooth surface. Examination of the tooth surface after plasma exposure by infrared spectroscopy and scanning electron microscopy did not show any significant alteration in the tooth material composition or the tooth surface structures.

  5. Characterization of DC magnetron plasma in Ar/Kr/N2 mixture during deposition of (Cr,Al)N coating

    NASA Astrophysics Data System (ADS)

    Bobzin, K.; Bagcivan, N.; Theiß, S.; Brugnara, R.; Bibinov, N.; Awakowicz, P.

    2017-02-01

    Reactive sputter deposition of (Cr,Al)N coatings in DC magnetron plasmas containing Ar/Kr/N2 mixtures is characterized by applying a combination of voltage–current measurement, optical emission spectroscopy (OES) and numerical simulation. Theoretical and experimental methods supplement each other and their combination permits us to obtain the most reliable information about the processes by physical vapor deposition. Gas temperature (T g) and plasma parameters, namely electron density n e and electron temperature T e are determined by spatial resolved measurements of molecular nitrogen photoemission. Steady-state densities of Cr and Al atoms are measured using OES. The sputtering of Cr and Al atoms is simulated using the TRIDYN code, measured electric current and applied voltage. Transport of sputtered atoms through the plasma volume is simulated by adopting a Monte-Carlo code. In order to quantify the ‘poisoning’ of the target surface with nitrogen, simulated steady state densities of Al and Cr atoms at different states of poisoning and at different distances from the target are compared with the measured densities. In addition, simulated fluxes of Cr and Al atoms to the substrate are compared with the measured deposition rates of the (Cr,Al)N coating.

  6. Flexible reduced graphene oxide supercapacitor fabricated using a nitrogen dc-pulse atmospheric-pressure plasma jet

    NASA Astrophysics Data System (ADS)

    Yang, Cheng-Han; Kuok, Fei-Hong; Liao, Chen-Yu; Wan, Ting-Hao; Chen, Chieh-Wen; Hsu, Cheng-Che; Cheng, I.-Chun; Chen, Jian-Zhang

    2017-02-01

    We use a nitrogen dc-pulse atmospheric-pressure plasma jet to fabricate a flexible reduced graphene oxide (rGO) supercapacitor with polyvinyl alcohol (PVA)/sulfuric acid (H2SO4) gel electrolyte. An areal capacitance of 47.03 mF · cm‑2 (evaluated using cyclic voltammetry (CV) under a potential scan rate of 2 mV · s‑1) is achieved. The supercapacitor can be operated without apparent degradation under bending with a bending radius of 0.55 cm. After a 1000 cycle CV stability test, the capacitance retention rate is 100% when flat and is 98.6% under bending (bending radius  =  0.55 cm), indicating promising stability of the APPJ-processed flexible supercapacitor.

  7. The use of ion chromatography-dc plasma atomic emission spectrometry for the speciation of trace metals

    SciTech Connect

    Urasa, I.T.

    1991-09-20

    The original objects of this research program were: to interface d.c. plasma atomic emission spectrometer with an ion chromatograph; to characterize and optimize the combined systems for application in the speciation of metals in aqueous solutions; to use this system in the study of the solution chemistry of various metals; and to find ways in which the measurement sensitivity of the method can be enhanced, thereby allowing the detection of metal species at low ppb concentration levels. This approach has been used to study the chemistry of and speciate several elements in solution including: arsenic, chromium, iron, manganese, nickel phosphorus, platinum, selenium, and vanadium. During the course of this research, we have found that the solution chemistry of the elements studied and the speciation data obtained can vary considerably depending on the solution, and the chromatographic conditions employed. The speciation of chromium, iron, and vanadium was found to be highly influenced by the acidity of the sample. The element selective nature of the d.c. plasma detector allows these changes to be monitored, thereby providing quantitative information on the new moieties formed. New approaches are being developed including the use of chelating ligands as preconcentration agents for purposes of reducing further the detection limits of the elements of interest and to improve the overall element speciation scheme. New thrusts are being directed towards the employment of post-column derivatization method coupled with colorimetric measurements to detect and quantify metal species eluting from the chromatographic column. The influence of sample acidity on these investigations will be carefully evaluated. These new thrusts are described in the accompanying Project Renewal Proposal.

  8. Initial Results of DC Electric Fields, Associated Plasma Drifts, Magnetic Fields, and Plasma Waves Observed on the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Bromund, K.; Klenzing, J.; Rowland, D.; Maynard, N.

    2010-01-01

    Initial results are presented from the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite, a mission designed to understand, model, and forecast the presence of equatorial ionospheric irregularities. The VEFI instrument includes a vector DC electric field detector, a fixed-bias Langmuir probe operating in the ion saturation regime, a flux gate magnetometer, an optical lightning detector, and associated electronics including a burst memory. Compared to data obtained during more active solar conditions, the ambient DC electric fields and their associated E x B drifts are variable and somewhat weak, typically < 1 mV/m. Although average drift directions show similarities to those previously reported, eastward/outward during day and westward/downward at night, this pattern varies significantly with longitude and is not always present. Daytime vertical drifts near the magnetic equator are largest after sunrise, with smaller average velocities after noon. Little or no pre-reversal enhancement in the vertical drift near sunset is observed, attributable to the solar minimum conditions creating a much reduced neutral dynamo at the satellite altitude. The nighttime ionosphere is characterized by larger amplitude, structured electric fields, even where the plasma density appears nearly quiescent. Data from successive orbits reveal that the vertical drifts and plasma density are both clearly organized with longitude. The spread-F density depletions and corresponding electric fields that have been detected thus far have displayed a preponderance to appear between midnight and dawn. Associated with the narrow plasma depletions that are detected are broad spectra of electric field and plasma density irregularities for which a full vector set of measurements is available for detailed study. Finally, the data set includes a wide range of ELF/VLF/HF oscillations corresponding to a variety of plasma waves

  9. Interaction of DC Microhollow Cathode Discharge Plasma Micro Jet with Liquid Media

    NASA Astrophysics Data System (ADS)

    Zhu, Weidong; Lopez, Jose; Becker, Kurt

    2008-10-01

    There have been different approaches in studying the interaction between plasma and liquid, such as sustained plasmas in contact with liquids and pulsed electric discharge in liquids. Recently, we have discovered that stable plasma can be sustained within a gas cavity maintained inside liquid media. A prototype device with key dimensions in sub-millimeter range were operated successfully in de-ionized water and turbo molecular pump oil with ambient air, pure nitrogen or pure oxygen used as the operating gas. Hydrogen Peroxide production in de-ionized water with ambient air as the working gas is estimated to be about 80 mg/L after 15 minutes plasma jet-water interaction while energy consumption is only about 8-10 W. With the radicals readily generated and directly introduced into the liquid media, it could lead to applications such as in-liquid bio-waste treatment, bio-rich liquid modification, in-situ monitoring/sensing, and filtration of by-products from VOC treatment by plasma.

  10. Pressure and arc voltage coupling in dc plasma torches: Identification and extraction of oscillation modes

    SciTech Connect

    Rat, V.; Coudert, J. F.

    2010-08-15

    This work is devoted to the instabilities occurring in a plasma torch, such as those found in plasma spraying. These instabilities are responsible for a lack of reproducibility of coatings properties, especially in the case of suspension plasma spraying that is an innovative way to obtain thin coatings of submicron-sized particles. Strong Helmholtz oscillations are highlighted in the plasma flow and it is demonstrated that they overlap with different acoustic modes in addition with the more commonly admitted ''restrike'' mode, the later being due to rearcing events in the arc region. The instabilities occur in the arc voltage but it is experimentally shown in this paper that the pressure within the torch body presents the same kind of instabilities. Besides, a numerical filtering technique has been adapted to isolate the different instability components. The operating parameters of the plasma torch were varied in order to highlight their influence on the amplitude of the different modes, both for the arc voltage and the pressure.

  11. Chemical state of nitrogen in a high nitrogen face-centered-cubic phase formed on plasma source ion nitrided austenitic stainless steel

    SciTech Connect

    Lei, M.K.; Zhu, X.M.

    2004-09-01

    A single high nitrogen face-centered-cubic phase ({gamma}{sub N}) was formed on the plasma source ion nitrided 1Cr18Ni9Ti (18-8 type) austenitic stainless steel. Auger electron spectroscopy and x-ray photoelectron spectroscopy, in conjunction with ion beam sputtering, were used to determine the chemical composition and bonding of nitrogen in the {gamma}{sub N} phase. The chemical composition of the {gamma}{sub N} phase was shown as a formula with atomic fraction (Fe{sub 0.60},Cr{sub 0.22},Ni{sub 0.18}){sub 2}N. The {gamma}{sub N} phase possessed weaker Cr-N ionic-type bonds and stronger Fe-N ionic-type bonds, compared with the stoichiometric nitrides. The Cr 2p{sub 3sol2} binding energy was 1.1 eV lower than that of CrN and Cr{sub 2}N phases (at 575.5 eV). The chemical shift of the Fe-N bonding compared with the Fe-Fe bonding was nearly 2.1 eV. The N 1s binding energies showed that the nitrogen was in the chemical state with iron (at 396.6 eV) and chromium (at 397.7 eV). All the chromium appeared to be in the Cr-N bond. A part of iron was also observed in the nitride state, and all the nickel was contained in the metallic state.

  12. Experimental analysis on the nonlinear behavior of DC barrier discharge plasmas

    NASA Astrophysics Data System (ADS)

    Dogan, Mansuroglu; Ilker Umit, Uzun-Kaymak

    2017-01-01

    Nonlinear behavior of glow discharge plasmas is experimentally investigated. The glow is generated between a barrier semiconductor electrode, Chromium doped namely Gallium Arsenide (GaAs:Cr), as a cathode and an Indium-Tin Oxide (ITO) coated glass electrode as an anode, in reverse bias. The planar nature of electrodes provides symmetry in spatial geometry. The discharge behaves oscillatory in the time domain, with single and sometimes multi-periodicities in plasma current and voltage characteristics. In this paper, harmonic frequency generation and transition to chaotic behavior is investigated. The observed current-voltage characteristics of the discharge are discussed in detail.

  13. Spectroscopic investigation of direct current (DC) plasma electrolytic oxidation of zirconium in citric acid.

    PubMed

    Stojadinović, Stevan; Radić-Perić, Jelena; Vasilić, Rastko; Perić, Miljenko

    2014-01-01

    Plasma electrolytic oxidation of zirconium in citric acid was investigated using optical spectroscopy. A rich emission spectrum consisting of about 360 zirconium and 170 oxygen atomic and ionic lines was identified in the spectral regions 313-320, 340-516, and 626-640 nm. It was shown that the remaining features observed in the spectrum could be ascribed to various molecular species, which involve zirconium, oxygen, hydrogen, and carbon. The temperature of the plasma core (T = 7500 ± 1000 K) was determined using measured Zr line intensities, and the temperature of peripheral plasma zone (T = 2800 ± 500 K) was estimated from the intensity distribution within a part of an OH spectrum. The composition of the plasma containing zirconium, oxygen, and hydrogen, under assumption of local thermal equilibrium, was calculated in the temperature range up to 12,000 K and for pressure of 10(5) and 10(7) Pa, in order to explain the appearance of the observed spectral features.

  14. Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

    NASA Astrophysics Data System (ADS)

    Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2002-01-01

    Dynamic plasma-based thin-film deposition incorporating ion mixing and plasma immersion is an effective technique to synthesize nitride-based hard films. We have fabricated TiN films using a filtered titanium vacuum arc in a nitrogen plasma environment. A pulsed high voltage is applied to the target for a short time when the metallic arc is fired to attain simultaneous plasma deposition and ion mixing. We investigate the dependence of the corrosion resistance and interfacial structure of the treated samples on the applied voltage. Our Auger results reveal an oxygen-rich surface film due to the non-ultra-high-vacuum conditions and high affinity of oxygen to titanium. The corrosion current is reduced by two orders of magnitude comparing the sample processed at 8 kV to the untreated sample, but the 23 kV sample unexpectedly shows worse results. The pitting potential diminishes substantially although the corrosion current is similar to that observed in the 8 kV sample. The polarization test data are consistent with our scanning electron microscopy observation, corroborating the difference in the pitting distribution and appearance. This anomalous behavior is believed to be due to the change in the chemical composition as a result of high-energy ion bombardment.

  15. Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor's

    NASA Astrophysics Data System (ADS)

    Han, In-Shik; Ji, Hee-Hwan; Goo, Tae-Gyu; Yoo, Ook-Sang; Choi, Won-Ho; Na, Min-Ki; Kim, Yong-Goo; Park, Sung-Hyung; Lee, Heui-Seung; Kang, Young-Seok; Kim, Dae-Byung; Lee, Hi-Deok

    2008-04-01

    In this paper, we investigated the device performance and negative bias temperature instability (NBTI) degradation for thermally nitrided oxide (TNO) and plasma nitrided oxide (PNO) in nanoscale p-channel metal oxide semiconductor field effect transistor (PMOSFET). PNOs show the improvement of dielectric performance compared to TNO with no change of the device performance. PNOs also show the improvement of NBTI immunity than TNO at low temperature stress, whereas NBTI immunity of PNO with high N concentration can be worse than TNO at high temperature stress. Recovery effect of NBTI degradation of PNO is lower than that of TNO and it is increased as the N concentration is increased in PNO because the dissociated Si dangling bonds and generated positive oxide charges are repassivated and neutralized, respectively. Moreover, complete recovery of ΔVth is dominated by neutralization of positive oxide charges. Therefore, N contents at polycrystalline Si/SiO2 interface as well as N contents at Si/SiO2 interface can affect significantly on NBTI degradation and recovery effect.

  16. dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel

    SciTech Connect

    C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

    2003-06-01

    Field-emission studies have been performed on a GaAs wafer and a sample of its stainless-steel (SS) support electrode that are part of a photocathode gun for the 10 kW Upgrade infrared free electron laser at Jefferson Lab. The objective of the studies presented here is to characterize the effect of both the cleanliness of the wafer and the plasma-source ion-implanted layer on the electrode to suppress field emission. Field emission is the limiting factor to achieve the required 6 MV/m at the surface of the wafer. Potential field emitters are first located on the surface of 1 in. diameter samples with a dc scanning field-emission microscope at 60 MV/m, then each emitter is characterized in a scanning electron microscope equipped with an energy dispersive spectrometer. The GaAs wafer was hydrogen cleaned before the study. The results show three emitters caused by indium contamination during wafer handling. The GaAs wafer thus shows good high-voltage characteristics and the need to maintain cleanliness during handling. The SS sample is hand polished with diamond paste to a 1-m surface finish, then implanted with N2/SiO2 in a plasma-source ion-implantation chamber in preparation for the field-emission studies.

  17. Plasma nitriding process by direct current glow discharge at low temperature increasing the thermal diffusivity of AISI 304 stainless steel

    SciTech Connect

    Prandel, L. V.; Somer, A.; Assmann, A.; Camelotti, F.; Costa, G.; Bonardi, C.; Jurelo, A. R.; Rodrigues, J. B.; Cruz, G. K.

    2013-02-14

    This work reports for the first time on the use of the open photoacoustic cell technique operating at very low frequencies and at room temperature to experimentally determine the thermal diffusivity parameter of commercial AISI304 stainless steel and AISI304 stainless steel nitrided samples. Complementary measurements of X-ray diffraction and scanning electron microscopy were also performed. The results show that in standard AISI 304 stainless steel samples the thermal diffusivity is (4.0 {+-} 0.3) Multiplication-Sign 10{sup -6} m{sup 2}/s. After the nitriding process, the thermal diffusivity increases to the value (7.1 {+-} 0.5) Multiplication-Sign 10{sup -6} m{sup 2}/s. The results are being associated to the diffusion process of nitrogen into the surface of the sample. Carrying out subsequent thermal treatment at 500 Degree-Sign C, the thermal diffusivity increases up to (12.0 {+-} 2) Multiplication-Sign 10{sup -6} m{sup 2}/s. Now the observed growing in the thermal diffusivity must be related to the change in the phases contained in the nitrided layer.

  18. Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

    NASA Technical Reports Server (NTRS)

    Peters, J. W.; Hall, T. C.; Erickson, J. J.; Gebhart, F. L.

    1979-01-01

    The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

  19. Morphology of zirconia particles exposed to D.C. arc plasma jet

    NASA Technical Reports Server (NTRS)

    Zaplatynsky, Isidor

    1987-01-01

    Zirconia particles were sprayed into water with an arc plasma gun in order to determine the effect of various gun operating parameters on their morphology. The collected particles were examined by XRD and SEM techniques. A correlation was established between the content of spherical (molten) particles and the operating parameters by visual inspection and regression analysis. It was determined that the composition of the arc gas and the power input were the predominant parameters that affected the melting of zirconia particles.

  20. Argon–oxygen dc magnetron discharge plasma probed with ion acoustic waves

    SciTech Connect

    Saikia, Partha Saikia, Bipul Kumar; Goswami, Kalyan Sindhu; Phukan, Arindam

    2014-05-15

    The precise determination of the relative concentration of negative ions is very important for the optimization of magnetron sputtering processes, especially for those undertaken in a multicomponent background produced by adding electronegative gases, such as oxygen, to the discharge. The temporal behavior of an ion acoustic wave excited from a stainless steel grid inside the plasma chamber is used to determine the relative negative ion concentration in the magnetron discharge plasma. The phase velocity of the ion acoustic wave in the presence of negative ions is found to be faster than in a pure argon plasma, and the phase velocity increases with the oxygen partial pressure. Optical emission spectroscopy further confirms the increase in the oxygen negative ion density, along with a decrease in the argon positive ion density under the same discharge conditions. The relative negative ion concentration values measured by ion acoustic waves are compared with those measured by a single Langmuir probe, and a similarity in the results obtained by both techniques is observed.

  1. Electron Backscatter Diffraction and Transmission Kikuchi Diffraction Analysis of an Austenitic Stainless Steel Subjected to Surface Mechanical Attrition Treatment and Plasma Nitriding.

    PubMed

    Proust, Gwénaëlle; Retraint, Delphine; Chemkhi, Mahdi; Roos, Arjen; Demangel, Clemence

    2015-08-01

    Austenitic 316L stainless steel can be used for orthopedic implants due to its biocompatibility and high corrosion resistance. Its range of applications in this field could be broadened by improving its wear and friction properties. Surface properties can be modified through surface hardening treatments. The effects of such treatments on the microstructure of the alloy were investigated here. Surface Mechanical Attrition Treatment (SMAT) is a surface treatment that enhances mechanical properties of the material surface by creating a thin nanocrystalline layer. After SMAT, some specimens underwent a plasma nitriding process to further enhance their surface properties. Using electron backscatter diffraction, transmission Kikuchi diffraction, energy dispersive spectroscopy, and transmission electron microscopy, the microstructural evolution of the stainless steel after these different surface treatments was characterized. Microstructural features investigated include thickness of the nanocrystalline layer, size of the grains within the nanocrystalline layer, and depth of diffusion of nitrogen atoms within the material.

  2. Experimental Studies of DC-excited Plasma Discharges in HMDSN-SF6 Mixtures

    NASA Astrophysics Data System (ADS)

    Pinto Mota, Rogério; Godoy de Santana, Regiane; Algatti, Mauricio Antonio; Yzumi Honda, Roberto; Eiji Kayama, Milton

    1996-10-01

    The study of the structure of thin films from glow discharges and their correlation with discharge parameters is very important for choosing a pre- determined physical property. In this work, we performed measurements of electron temperature using a cylindrical Langmuir probe in DC discharges of HMDSN/SF6 for several mixtures with the proportion of SF6 varying from 0 to 50%, at a total pressure of 0.6 mbar. The voltage applied across the discharge was kept constant at 800V. The electron temperature varied from 0.6 to 2.0 eV, presenting a parabolic profile decreasing from the middle towards the edge of the electrode. The same behavior was also observed for the film thickness profile. The film growth rate varied from 12 to 155 Åmin, presenting a maximum at 20% SF_6. The FTIR spectra of the polymeric films showed the disappearance of the chemical bonds C-H, Si-H, and Si-CH3 for SF6 percentages above 30%, and the appearance C-F and Si-F chemical bonds.

  3. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    NASA Astrophysics Data System (ADS)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  4. Boron nitride nanotubes.

    PubMed

    Chopra, N G; Luyken, R J; Cherrey, K; Crespi, V H; Cohen, M L; Louie, S G; Zettl, A

    1995-08-18

    The successful synthesis of pure boron nitride (BN) nanotubes is reported here. Multi-walled tubes with inner diameters on the order of 1 to 3 nanometers and with lengths up to 200 nanometers were produced in a carbon-free plasma discharge between a BN-packed tungsten rod and a cooled copper electrode. Electron energy-loss spectroscopy on individual tubes yielded B:N ratios of approximately 1, which is consistent with theoretical predictions of stable BN tube structures.

  5. Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H{sub 2} + 95% N{sub 2}) plasma

    SciTech Connect

    Muneshwar, Triratna Cadien, Ken

    2015-05-15

    Zirconium nitride (ZrN) has the lowest bulk electrical resistivity and high thermal stability among group IV and V transition metal nitrides, which makes it a promising material for ULSI applications such as a diffusion barrier for Cu interconnects, contact metal in III-V semiconductor devices, and in high density memory structures. Plasma enhanced atomic layer deposition (PEALD) of conducting ZrN thin films using Zr[N(CH{sub 3}){sub 2}]{sub 4} and forming gas (5% H{sub 2} + 95% N{sub 2}) plasma is reported in this article. The growth per cycle (GPC) for every deposition was determined from analysis of dynamic in-situ spectroscopic ellipsometry (d-iSE) measurements. An experimental design is proposed for faster determination of ALD growth saturation curves. At substrate temperature of 150 °C, a GPC of 0.10 nm/cycle was observed for self-limiting ZrN PEALD growth. The electrical resistivity of ZrN films deposited on SiO{sub 2} substrate was found to be 559.5 ± 18.5 μΩ cm with negligible change in resistivity even after ∼1000 h exposure to air. The metallic behavior of our ZrN films was evident from the free electron dispersion component in dielectric response, the broad band of photoelectron emission across Fermi level and the positive temperature coefficient for resistivity of 0.0088/ °C.

  6. Modelling of the layer evolution during nitriding processes

    SciTech Connect

    Figueroa, U.; Oseguera, J.; Schabes, P.

    1995-12-31

    The evolution of concomitant layers of nitrides is presented. The layer formation is experimentally achieved through two processes: Nitriding with a weakly ionized plasma and nitrogen post-discharge nitriding. The nitriding processes were performed on samples of pure iron and carbon steel. Nitriding temperatures were close but different from the eutectoid transformation point temperature. The experimental layer growth pattern is compared with a model of mass transfer, in which interface mass balance is considered. In the model the authors have considered the formation of one and two compact nitride layers. For short time of treatment, it is shown that a parabolic profile does not satisfactorily describe the layer growth.

  7. Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge-Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma

    NASA Astrophysics Data System (ADS)

    Okigawa, Mitsuru; Ishikawa, Yasushi; Samukawa, Seiji

    2003-04-01

    We found that ultraviolet (UV) light from helium discharge plasma and a halogen lamp clearly induce SiO2-Si interface states in a metal-silicon-nitride-oxide-silicon (MNOS) structure. A dark current originating in the interface states of charge-coupled-device (CCD) image sensors also increases by this UV irradiation. Pulse-time-modulated (TM) plasma suppresses the interface states, resulting in the CCD dark current, by decreasing the UV light. On the other hand, results of Capacitance-Voltage (CV) measurement did not show the difference between UV irradiation and no irradiation. This indicates that fixed charges in the SiO2 cannot be generated by the UV lights. Using optical filters, we revealed that a photon energy of 3.90 eV (318 nm) to 4.96 eV (250 nm) causes an increase in the interface states.

  8. Vibrational excitation in O2and Cl2inductively-coupled plasmas and DC discharges

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul; Marinov, Daniil; Foucher, Mickael; Annusova, Adriana; Guerra, Vasco

    2016-09-01

    Low-energy electrons can interact with molecules via resonances to cause vibrational excitation with large cross-sections. Such processes can absorb significant energy from the plasma electrons, affecting the electron energy distribution and potentially (via vibration-translation (VT) energy transfer) causing substantial gas heating. The presence of vibrationally excited molecules may significant increase the rates of collisional processes, including electron dissociative attachment and electron impact dissociation into neutral atoms. However, the cross-sections of these processes are often poorly known since they are extremely difficult to measure directly, and reliable theoretical calculations are only now appearing for simple diatomic molecules. We have measured the vibrational distributions in discharges in pure O2 and pure Cl2, using high-sensitivity ultra-broadband ultraviolet absorption spectroscopy. In O2 plasmas significant vibrational excitation is observed, up to v'' =18, with a tail temperature of around 8000K. In Cl2 excitation is only observed up to v'' =3, and the distribution appears to be in local equilibrium with the gas translational temperature (up to 1500K). We are developing a detailed self-consistent 0D global model of these systems including vibrational excitation. Work performed in the LABEX Plas@par project, with financial state aid (ANR-11-IDEX-0004-02 and ANR-13-BS09-0019).

  9. Plasma potential of a moving ionization zone in DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Anders, André

    2017-02-01

    Using movable emissive and floating probes, we determined the plasma and floating potentials of an ionization zone (spoke) in a direct current magnetron sputtering discharge. Measurements were recorded in a space and time resolved manner, which allowed us to make a three-dimensional representation of the plasma potential. From this information we could derive the related electric field, space charge, and the related spatial distribution of electron heating. The data reveal the existence of strong electric fields parallel and perpendicular to the target surface. The largest E-fields result from a double layer structure at the leading edge of the ionization zone. We suggest that the double layer plays a crucial role in the energization of electrons since electrons can gain several 10 eV of energy when crossing the double layer. We find sustained coupling between the potential structure, electron heating, and excitation and ionization processes as electrons drift over the magnetron target. The brightest region of an ionization zone is present right after the potential jump, where drifting electrons arrive and where most local electron heating occurs. The ionization zone intensity decays as electrons continue to drift in the Ez × B direction, losing energy by inelastic collisions; electrons become energized again as they cross the potential jump. This results in the elongated, arrowhead-like shape of the ionization zone. The ionization zone moves in the -Ez × B direction from which the to-be-heated electrons arrive and into which the heating region expands; the zone motion is dictated by the force of the local electric field on the ions at the leading edge of the ionization zone. We hypothesize that electron heating caused by the potential jump and physical processes associated with the double layer also apply to magnetrons at higher discharge power, including high power impulse magnetron sputtering.

  10. Field emission from open ended aluminum nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Tondare, V. N.; Balasubramanian, C.; Shende, S. V.; Joag, D. S.; Godbole, V. P.; Bhoraskar, S. V.; Bhadbhade, M.

    2002-06-01

    This letter reports the field emission measurements from the nanotubes of aluminum nitride which were synthesized by gas phase condensation using the solid-vapor equilibria. A dc arc plasma reactor was used for producing the vapors of aluminum in a reactive nitrogen atmosphere. Nanoparticles and nanotubes of aluminum nitride were first characterized by transmission electron microscope and tube dimensions were found to be varying from 30 to 200 nm in diameter and 500 to 700 nm in length. These tubes were mixed with nanoparticles of size range between 5 and 200 nm in diameter. Tungsten tips coated with these nanoparticles and tubes were used as a field emitter. The field emission patterns display very interesting features consisting of sharp rings which were often found to change their shapes. The patterns are attributed to the open ended nanotubes of aluminum nitride. A few dot patterns corresponding to the nanoparticles were also seen to occur. The Fowler-Nordheim plots were seen to be nonlinear in nature, which reflects the semi-insulating behavior of the emitter. The field enhancement factor is estimated to be 34 500 indicating that the field enhancement due to the nanometric size of the emitter is an important cause for the observed emission.

  11. Functionalized boron nitride nanotubes

    DOEpatents

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  12. Microstructural characterization of Ti-6Al-4V alloy subjected to the duplex SMAT/plasma nitriding.

    PubMed

    Pi, Y; Faure, J; Agoda-Tandjawa, G; Andreazza, C; Potiron, S; Levesque, A; Demangel, C; Retraint, D; Benhayoune, H

    2013-09-01

    In this study, microstructural characterization of Ti-6Al-4V alloy, subjected to the duplex surface mechanical attrition treatment (SMAT)/nitriding treatment, leading to improve its mechanical properties, was carried out through novel and original samples preparation methods. Instead of acid etching which is limited for morphological characterization by scanning electron microscopy (SEM), an original ion polishing method was developed. Moreover, for structural characterization by transmission electron microscopy (TEM), an ion milling method based with the use of two ions guns was also carried out for cross-section preparation. To demonstrate the efficiency of the two developed methods, morphological investigations were done by traditional SEM and field emission gun SEM. This was followed by structural investigations through selected area electron diffraction (SAED) coupled with TEM and X-ray diffraction techniques. The results demonstrated that ionic polishing allowed to reveal a variation of the microstructure according to the surface treatment that could not be observed by acid etching preparation. TEM associated to SAED and X-ray diffraction provided information regarding the nanostructure compositional changes induced by the duplex SMAT/nitriding process.

  13. Synthesis of AlN/Al Polycrystals along with Al Nanoparticles Using Thermal Plasma Route

    SciTech Connect

    Kanhe, Nilesh S.; Nawale, A. B.; Kulkarni, N. V.; Bhoraskar, S. V.; Mathe, V. L.; Das, A. K.

    2011-07-15

    This paper for the first time reports the (200) oriented growth of hexagonal Aluminum nitride crystals during synthesis of aluminum nanoparticles in dc transferred arc thermal plasma reactor by gas phase condensation in nitrogen plasma. The structural and morphological study of as synthesized AlN crystal and aluminium nanoparticles was done by using the x-ray diffraction method, scanning electron microscopy and transmission electron microscopy.

  14. Numerical study of an ArH2 gas mixture flowing inside and outside a dc plasma torch

    NASA Astrophysics Data System (ADS)

    Eichert, P.; Imbert, M.; Coddet, C.

    1998-12-01

    The flow of gas mixtures in a dc plasma torch is studied using the CFD PHOENICS (CFD PHOENICS, Berkeley, CA) code. In the model, the cold gas mixture (300 K), initially constituted of 85 vol% Ar and 15 vol% H, is introduced into a power input zone where it takes energy and is ejected in the surrounding atmosphere at constant pressure (105 Pa). The flow is assumed to be in chemical equilibrium. Equations of mass, momentum, and energy are discretized using a control-volume method. The turbulent flow is modeled by a k-ɛ two-equations model for the turbulent kinetic energy and its dissipation rate. Finally, the algebraic coupling equations set is solved by means of the SIMPLEST algorithm, implemented into the CFD code, using a hybrid interpolation scheme. Results concern the effect of the torch power on the ArH2 flow. The phenomenon is analyzed through the evolution of velocity and temperature inside and outside the torch. From these calculations, the effect of ambient gas entrainment by the jet is emphasized and a comparison of the level of entrained gas is made with experimental data.

  15. DC and Structured Electric Fields Observed on the C/NOFS Satellite and Their Association with Longitude, Plasma Density, and Solar Activity

    NASA Technical Reports Server (NTRS)

    Pfaff, Robert; Freudenreich, H.; Rowland, D.; Klenzing, J.

    2012-01-01

    Observations of DC electric fields and associated E x B plasma drifts gathered by the Vector Electric Field Investigation (VEFI) on the Air Force Communication/Navigation Outage Forecasting System (C/NOFS) satellite are presented. We show statistical averages of the vector fields and resulting E x B plasma flows for the first three years of operations as a function of season, longitude, local time, and Fl 0.7 conditions. Magnetic field data from the VEFI science magnetometer are used to compute the plasma flows. Although typically displaying eastward and outward-directed fields during the day and westward and downward-directed fields at night, the data from DC electric field detector often reveal variations from this pattern that depend on longitude, solar activity, and plasma density. Clear "wave-4" tidal effects in both electric field components have been detected and will be presented. Zonal plasma drifts show a marked variation with solar activity and may be used as a proxy for neutral winds at night. Evidence for pre-reversal enhancements in the meridional drifts that depend on solar activity is present for some longitudes, and are corroborated by clear evidence in the plasma density data that the spacecraft journeyed below the F-peak during evenings when the rise in the ionosphere is most pronounced. In addition to DC electric fields, the data reveal considerable electric field structures at large scales (approx 100's of km) that are usually confined to the nightside. Although such electric field structures are typically associated with plasma density depletions and structures, what is surprising is the number of cases in which large amplitude, structured DC electric fields are observed without a significant plasma density counterpart structure, including their appearance at times when the ambient plasma density appears relatively quiescent. We investigate the mapping of structured electric fields along magnetic field lines from distant locations and consider

  16. DC and Wave Electric Fields and Other Plasma Parameters Observed on Two Sounding Rockets in the Dark Cusp During IMF Bz North and South Conditions

    NASA Technical Reports Server (NTRS)

    Pfaff, R. F.; Acuna, M.; Bounds, S.; Farrell, W.; Freudenreich, H.; Lepping, R.; Vondrak, R.; Maynard, N. C.; Moen, J.; Egeland, A.

    1997-01-01

    Two Black Brant IX sounding rockets were launched into the dark, dayside cusp near magnetic noon on December 2 and 3, 1997, from Ny Alesund, Spitzbergen at 79 N reaching altitudes of approximately 450 km. Real-time ground-based and Wind IMF data were used to determine the launch conditions. The first launch, with Bz north conditions, crossed into and back out of an open field region with merging poleward of the projected trajectory. The second flight, into Bz south conditions, was timed to coincide with an enhancement in the merging rate from a increase in the negative Bz, while the DMSP F13 satellite was situated slightly to the north of the rocket trajectory. Each payload returned DC electric and magnetic fields, plasma waves, energetic particles, photometer data, and thermal plasma data. Data from both flights will be shown, with an emphasis on the DC electric field results. In particular, the data gathered on December 2, 1997 will be used to discuss ionospheric signatures of merging and the open/closed character of the the cusp/low latitude boundary layer. In contrast, the data gathered on December 3, 1997 shows evidence of pulsed electric field structures which will be examined in the context of cusp plasma entry processes. Both data sets returned a rich variety of plasma waves, as well as optical emissions and thermal plasma data.

  17. DC and Wave Electric Fields and Other Plasma Parameters Observed on Two Sounding Rockets in the Dark Cusp during IMF BZ North and South Conditions

    NASA Technical Reports Server (NTRS)

    Pfaff, R. F.; Bounds, S.; Acuna, M.; Maynard, N. C.; Moen, J.; Egeland, A.; Holtet, J.; Maseide, K.; Sandholt, P. E.; Soraas, F.

    1999-01-01

    Two Black Brant IX sounding rockets were launched into the dark, dayside cusp near magnetic noon on December 2 and 3, 1997, from Ny Alesund, Spitzbergen at 79degN reaching altitudes of approximately 450 km. Real-time ground-based and Wind (interplanetary magnetic field) IMF data were used to determine the launch conditions. The first launch, with Bz north conditions, crossed into and back out of an open field region with merging poleward of the projected trajectory. The second flight, into Bz south conditions, was timed to coincide with an enhancement in the merging rate from a increase in the negative Bz, while the (Defense Meteorological Satellite Program) DMSP F13 satellite was situated slightly to the north of the rocket trajectory. Each payload returned DC electric and magnetic fields, plasma waves, energetic particles, photometer data, and thermal plasma data. Data from both flights will be shown, with an emphasis on the DC electric field results. In particular, the data gathered on December 2, 1997 will be used to discuss ionospheric signatures of merging and the open/closed character of the the cusp/low latitude boundary layer. In contrast, the data gathered on December 3, 1997 shows evidence of pulsed electric field structures which will be examined in the context of cusp plasma entry processes. Both data sets returned a rich variety of plasma waves, as well as optical emissions and thermal plasma data.

  18. DC and Wave Electric Fields and Other Plasma Parameters Observed on Two Sounding Rockets in the Dark Cusp during IMF Bz North and South Conditions

    NASA Technical Reports Server (NTRS)

    Pfaff, R. F.; Acuna, M.; Bounds, S.; Farrell, W.; Freudenreich, W.; Lepping, R.; Vondrak, R.; Maynard, N. C.; Moen, J.; Egeland, A.

    1999-01-01

    Two Black Brant IX sounding rockets were launched into the dark, dayside cusp near magnetic noon on December 2 and 3, 1997, from Ny Alesund, Spitzbergen at 79 deg N reaching altitudes of about 450 km. Real-time ground-based and Wind IMF data were used to determine the launch conditions. The first launch, with Bz north conditions, crossed into and back out of an open field region with merging poleward of the projected trajectory. The second flight, into Bz south conditions, was timed to coincide with an enhancement in the merging rate from a increase in the negative Bz, while the DMSP Fl 3 satellite was situated slightly to the north of the rocket trajectory. Each payload returned DC electric and magnetic fields, plasma waves, energetic particles, photometer data, and thermal plasma data. Data from both flights will be shown, with an emphasis on the DC electric field results. In particular, the data gathered on December 2, 1997 will be used to discuss ionospheric signatures of merging and the open/closed character of the the cusp/low latitude boundary layer. In contrast, the data gathered on December 3, 1997 shows evidence of pulsed electric field structures which will be examined in the context of cusp plasma entry processes. Both data sets returned a rich variety of plasma waves, as well as optical emissions and thermal plasma data.

  19. Analysis of plasma protein adsorption onto DC-Chol-DOPE cationic liposomes by HPLC-CHIP coupled to a Q-TOF mass spectrometer.

    PubMed

    Capriotti, Anna Laura; Caracciolo, Giulio; Caruso, Giuseppe; Cavaliere, Chiara; Pozzi, Daniela; Samperi, Roberto; Laganà, Aldo

    2010-12-01

    Plasma protein adsorption is regarded as a key factor in the in vivo organ distribution of intravenously administered drug carriers, and strongly depends on vector surface characteristics. The present study aimed to characterize the "protein corona" absorbed onto DC-Chol-DOPE cationic liposomes. This system was chosen because it is one of the most efficient and widely used non-viral formulations in vitro and a potential candidate for in vivo transfection of genetic material. After incubation of human plasma with cationic liposomes, nanoparticle-protein complex was separated from plasma by centrifugation. An integrated approach based on protein separation by one-dimensional 12% polyacrylamide gel electrophoresis followed by the automated HPLC-Chip technology coupled to a high-resolution mass spectrometer was employed for protein corona characterization. Thirty gel lanes, approximately 2 mm, were cut, digested and analyzed by HPLC-MS/MS. Fifty-eight human plasma proteins adsorbed onto DC-Chol-DOPE cationic liposomes were identified. The knowledge of the interactions of proteins with liposomes can be exploited for future controlled design of colloidal drug carriers and possibly in the controlled creation of biocompatible surfaces of other devices that come into contact with proteins in body fluids.

  20. Guided Discharge Path by Weak Ionized Region between Two Plasmas Produced by YAG Laser in Atmospheric Air Gap with Non-Uniform DC Electric Field

    NASA Astrophysics Data System (ADS)

    Okano, Daisuke

    1998-11-01

    Guided Discharge Path by Weak Ionized Region between Two Plasmas Produced by YAG Laser in Atmospheric Air Gap with Non-Uniform DC Electric Field*, Daisuke Okano, Kyushu Tokai University, 9-1-1 Toroku, Kumamoto, Japan. -----We have studied on guiding discharge path by weak ionized region between plasmas produced by a visible laser, that is, a YAG laser with wavelength 532nm, in an atmospheric air gap with DC non-uniform electric field using a rod-to-plate electrode. We succeeded in capturing the framing images in the temporal evolution on guiding discharge along the YAG laser light path. From the results of experiments, the region between two plasmas produced by a YAG laser can guide a discharge path, and the region between two plasmas on the laser light path is considered as well as a weak ionized one [1] produced by an excimer laser. [1]J.Sasaki, S.Kubodera, R.Ozaki and T.Uchiyama, J. Appl. Phys., 60 (1986) 3845. *This work was supported by Grant-in-Aid for Scientific Research (C)-no.10650295 of The Ministry of education, Science Sports and Culture in japan.

  1. Temporally and Spatially Resolved Plasma Spectroscopy in Pulsed Laser Deposition of Ultra-Thin Boron Nitride Films (Postprint)

    DTIC Science & Technology

    2015-04-24

    from earlier stage direct propagation to a shockwave formation and hydrody- namically controlled propagation at later stages in plume de- velopment.11 In...clearly highlight the significance of the background gas pressure on the shockwave formation and plume propagation dynamics, plasma plume composition, and...ionization of the background nitrogen in collisions within the shockwave front of the plasma plume, which formation is confirmed for pressures above 30

  2. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    NASA Astrophysics Data System (ADS)

    Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

    2014-08-01

    Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  3. Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy.

    PubMed

    Xu, Zhongguang; Tian, Hao; Khanaki, Alireza; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin

    2017-02-23

    Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb lattice structure to graphene, is promising as a dielectric material for a wide variety of potential applications based on 2D materials. Synthesis of high-quality, large-size and single-crystalline h-BN domains is of vital importance for fundamental research as well as practical applications. In this work, we report the growth of h-BN films on mechanically polished cobalt (Co) foils using plasma-assisted molecular beam epitaxy. Under appropriate growth conditions, the coverage of h-BN layers can be readily controlled by growth time. A large-area, multi-layer h-BN film with a thickness of 5~6 nm is confirmed by Raman spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy. In addition, the size of h-BN single domains is 20~100 μm. Dielectric property of as-grown h-BN film is evaluated by characterization of Co(foil)/h-BN/Co(contact) capacitor devices. Breakdown electric field is in the range of 3.0~3.3 MV/cm, which indicates that the epitaxial h-BN film has good insulating characteristics. In addition, the effect of substrate morphology on h-BN growth is discussed regarding different domain density, lateral size, and thickness of the h-BN films grown on unpolished and polished Co foils.

  4. Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy

    PubMed Central

    Xu, Zhongguang; Tian, Hao; Khanaki, Alireza; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin

    2017-01-01

    Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb lattice structure to graphene, is promising as a dielectric material for a wide variety of potential applications based on 2D materials. Synthesis of high-quality, large-size and single-crystalline h-BN domains is of vital importance for fundamental research as well as practical applications. In this work, we report the growth of h-BN films on mechanically polished cobalt (Co) foils using plasma-assisted molecular beam epitaxy. Under appropriate growth conditions, the coverage of h-BN layers can be readily controlled by growth time. A large-area, multi-layer h-BN film with a thickness of 5~6 nm is confirmed by Raman spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy. In addition, the size of h-BN single domains is 20~100 μm. Dielectric property of as-grown h-BN film is evaluated by characterization of Co(foil)/h-BN/Co(contact) capacitor devices. Breakdown electric field is in the range of 3.0~3.3 MV/cm, which indicates that the epitaxial h-BN film has good insulating characteristics. In addition, the effect of substrate morphology on h-BN growth is discussed regarding different domain density, lateral size, and thickness of the h-BN films grown on unpolished and polished Co foils. PMID:28230178

  5. Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, Zhongguang; Tian, Hao; Khanaki, Alireza; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin

    2017-02-01

    Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb lattice structure to graphene, is promising as a dielectric material for a wide variety of potential applications based on 2D materials. Synthesis of high-quality, large-size and single-crystalline h-BN domains is of vital importance for fundamental research as well as practical applications. In this work, we report the growth of h-BN films on mechanically polished cobalt (Co) foils using plasma-assisted molecular beam epitaxy. Under appropriate growth conditions, the coverage of h-BN layers can be readily controlled by growth time. A large-area, multi-layer h-BN film with a thickness of 5~6 nm is confirmed by Raman spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy. In addition, the size of h-BN single domains is 20~100 μm. Dielectric property of as-grown h-BN film is evaluated by characterization of Co(foil)/h-BN/Co(contact) capacitor devices. Breakdown electric field is in the range of 3.0~3.3 MV/cm, which indicates that the epitaxial h-BN film has good insulating characteristics. In addition, the effect of substrate morphology on h-BN growth is discussed regarding different domain density, lateral size, and thickness of the h-BN films grown on unpolished and polished Co foils.

  6. Cancer cells (MCF-7, Colo-357, and LNCaP) viability on amorphous hydrogenated carbon nitride film deposited by dielectric barrier discharge plasma

    SciTech Connect

    Majumdar, Abhijit; Hippler, Rainer; Ummanni, Ramesh; Walther, Reinhard; Schroeder, Karsten

    2009-08-01

    Atmospheric pressure dielectric barrier discharge plasma in CH{sub 4}/N{sub 2} (1:1) gas mixture has been employed to deposit amorphous hydrogenated carbon nitride (aH-CN{sub x}) film. In vitro studies with three different cancer cell lines were carried out on the coated surfaces. Preliminary biocompatibility and effect of CH{sub 4}/N{sub 2} films have been investigated by measuring cell proliferation. Three different cancer cell (MCF-7, Colo-357, and LNCaP) suspensions have been exposed on the surface of aH-CN{sub x} film to investigate the effect of deposited films on viability of cells. Results from the MTS (3-(4,5-dimethylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2- (4-sulfophenyl)-2H- tetrazolium, inner salt) proliferation assays indicated that the deposited aH-CN{sub x} film is cytotoxic to cancer cell lines. Time course cell viability assay indicated maximum cell death at 24 h after seeding the cells. This effect is dependant on physicochemical and mechanical properties of the deposited films. The deposited film has been characterized by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The results confirm the presence of C-N, Cident toN, C-H{sub x}, C-O, N-O, overlapping NH, and OH bonds in the film.

  7. Cancer cells (MCF-7, Colo-357, and LNCaP) viability on amorphous hydrogenated carbon nitride film deposited by dielectric barrier discharge plasma

    NASA Astrophysics Data System (ADS)

    Majumdar, Abhijit; Ummanni, Ramesh; Schröder, Karsten; Walther, Reinhard; Hippler, Rainer

    2009-08-01

    Atmospheric pressure dielectric barrier discharge plasma in CH4/N2 (1:1) gas mixture has been employed to deposit amorphous hydrogenated carbon nitride (aH-CNx) film. In vitro studies with three different cancer cell lines were carried out on the coated surfaces. Preliminary biocompatibility and effect of CH4/N2 films have been investigated by measuring cell proliferation. Three different cancer cell (MCF-7, Colo-357, and LNCaP) suspensions have been exposed on the surface of aH-CNx film to investigate the effect of deposited films on viability of cells. Results from the MTS (3-(4,5-dimethylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfophenyl)-2H- tetrazolium, inner salt) proliferation assays indicated that the deposited aH-CNx film is cytotoxic to cancer cell lines. Time course cell viability assay indicated maximum cell death at 24 h after seeding the cells. This effect is dependant on physicochemical and mechanical properties of the deposited films. The deposited film has been characterized by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The results confirm the presence of C-N, C≡N, C-Hx, C-O, N-O, overlapping NH, and OH bonds in the film.

  8. Persistent Longitudinal Variations of Plasma Density and DC Electric Fields in the Low Latitude Ionosphere Observed with Probes on the C/NOFS Satellite

    NASA Technical Reports Server (NTRS)

    Pfaff, R.; Freudenreich, H.; Klenzing, J.; Rowland, D.; Liebrecht, C.; Bromund, K.; Roddy, P.

    2010-01-01

    Continuous measurements using in situ probes on consecutive orbits of the C/N0FS satellite reveal that the plasma density is persistently organized by longitude, in both day and night conditions and at all locations within the satellite orbit, defined by its perigee and apogee of 401 km and 867 km, respectively, and its inclination of 13 degrees. Typical variations are a factor of 2 or 3 compared to mean values. Furthermore, simultaneous observations of DC electric fields and their associated E x B drifts in the low latitude ionosphere also reveal that their amplitudes are also strongly organized by longitude in a similar fashion. The drift variations with longitude are particularly pronounced in the meridional component perpendicular to the magnetic field although they are also present in the zonal component as well. The longitudes of the peak meridional drift and density values are significantly out of phase with respect to each other. Time constants for the plasma accumulation at higher altitudes with respect to the vertical drift velocity must be taken into account in order to properly interpret the detailed comparisons of the phase relationship of the plasma density and plasma velocity variations. Although for a given period corresponding to that of several days, typically one longitude region dominates the structuring of the plasma density and plasma drift data, there is also evidence for variations organized about multiple longitudes at the same time. Statistical averages will be shown that suggest a tidal "wave 4" structuring is present in both the plasma drift and plasma density data. We interpret the apparent association of the modulation of the E x B drifts with longitude as well as that of the ambient plasma density as a manifestation of tidal forces at work in the low latitude upper atmosphere. The observations demonstrate how the high duty cycle of the C/NOFS observations and its unique orbit expose fundamental processes at work in the low latitude

  9. Preparation of silicon carbide SiC-based nanopowders by the aerosol-assisted synthesis and the DC thermal plasma synthesis methods

    SciTech Connect

    Czosnek, Cezary; Bućko, Mirosław M.; Janik, Jerzy F.; Olejniczak, Zbigniew; Bystrzejewski, Michał; Łabędź, Olga; Huczko, Andrzej

    2015-03-15

    Highlights: • Make-up of the SiC-based nanopowders is a function of the C:Si:O ratio in precursor. • Two-stage aerosol-assisted synthesis offers conditions close to equilibrium. • DC thermal plasma synthesis yields kinetically controlled SiC products. - Abstract: Nanosized SiC-based powders were prepared from selected liquid-phase organosilicon precursors by the aerosol-assisted synthesis, the DC thermal plasma synthesis, and a combination of the two methods. The two-stage aerosol-assisted synthesis method provides at the end conditions close to thermodynamic equilibrium. The single-stage thermal plasma method is characterized by short particle residence times in the reaction zone, which can lead to kinetically controlled products. The by-products and final nanopowders were characterized by powder XRD, infrared spectroscopy FT-IR, scanning electron microscopy SEM, and {sup 29}Si MAS NMR spectroscopy. BET specific surface areas of the products were determined by standard physical adsorption of nitrogen at 77 K. The major component in all synthesis routes was found to be cubic silicon carbide β-SiC with average crystallite sizes ranging from a few to tens of nanometers. In some cases, it was accompanied by free carbon, elemental silicon or silica nanoparticles. The final mesoporous β-SiC-based nanopowders have a potential as affordable catalyst supports.

  10. Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push-pull plasma source

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Sirse, Nishant; Kim, Ki Hyun; Rogers Ellingboe, Albert; Kim, Kyong Nam; Yeom, Geun Young

    2016-10-01

    To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source, SiN x layers were deposited with a gas mixture of NH3/SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push-pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3/SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3N4 layer with very low Si-H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18  ×  10-4 g (m2 · d)-1, in addition to an optical transmittance of higher than 90%.

  11. Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tarala, V.; Ambartsumov, M.; Altakhov, A.; Martens, V.; Shevchenko, M.

    2016-12-01

    The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It has been shown that, ceteris paribus, AlN films grown on sapphire substrates have higher crystallinity than the samples grown on silicon wafers. With duration of plasma exposure of more than 20 s and at a temperature of 300 °C synthesized heteroepitaxial film had refractive index equal to 2.03±0.03. The X-ray diffraction scans feature (002) and (004) reflections at 2Θ equal to 35.7° and 75.9°, which are characteristic of hexagonal polytype of AlN. For the best sample, (002) reflection had full width on the half maximum of 162±11″

  12. Cobalt and iron segregation and nitride formation from nitrogen plasma treatment of CoFeB surfaces

    NASA Astrophysics Data System (ADS)

    Mattson, E. C.; Michalak, D. J.; Veyan, J. F.; Chabal, Y. J.

    2017-02-01

    Cobalt-iron-boron (CoFeB) thin films are the industry standard for ferromagnetic layers in magnetic tunnel junction devices and are closely related to the relevant surfaces of CoFe-based catalysts. Identifying and understanding the composition of their surfaces under relevant processing conditions is therefore critical. Here we report fundamental studies on the interaction of nitrogen plasma with CoFeB surfaces using infrared spectroscopy, x-ray photoemission spectroscopy, and low energy ion scattering. We find that, upon exposure to nitrogen plasma, clean CoFeB surfaces spontaneously reorganize to form an overlayer comprised of Fe2N3 and BN, with the Co atoms moved well below the surface through a chemically driven process. Subsequent annealing to 400 °C removes nitrogen, resulting in a Fe-rich termination of the surface region.

  13. Plasma assisted surface coating/modification processes - An emerging technology

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1987-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation. These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  14. Plasma assisted surface coating/modification processes: An emerging technology

    NASA Astrophysics Data System (ADS)

    Spalvins, T.

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation). These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  15. Plasma assisted surface coating/modification processes - An emerging technology

    NASA Astrophysics Data System (ADS)

    Spalvins, T.

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation. These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  16. Plasma assisted surface coating/modification processes: An emerging technology

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1986-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation). These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  17. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    NASA Astrophysics Data System (ADS)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  18. Effect of Low-Pressure Nitrogen DC Plasma Treatment on the Surface Properties of Biaxially Oriented Polypropylene, Poly (Methyl Methacrylate) and Polyvinyl Chloride Films

    NASA Astrophysics Data System (ADS)

    S. Hamideh, Mortazavi; Mahmood, Ghoranneviss; Soheil, Pilehvar; Sina, Esmaeili; Shamim, Zargham; S. Ebrahim, Hashemi; Hamzeh, Jodat

    2013-04-01

    In this study, commercial biaxially oriented polypropylene (BOPP), polyvinyl chloride (PVC) and poly (methyl methacrylate) (PMMA) films were treated with nitrogen plasma over different exposure times in a Pyrex tube surrounded by a DC variable magnetic field. The chemical changes that appeared on the surface of the samples were investigated using Fourier transform infrared (FT-IR) spectroscopy and attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy after treatment for 2 min, 4 min and 6 min in a nitrogen plasma chamber. Effects of the plasma treatment on the surface topographies and contact angles of the untreated and plasma treated films were also analyzed by atomic force microscopy (AFM) and a contact angle measuring system. The results show that the plasma treated films become more hydrophilic with an enhanced wettability due to the formation of some new polar groups on the surface of the treated films. Moreover, at higher exposure times, the total surface energy in all treated films increased while a reduction in contact angle occurred. The behavior of surface roughness in each sample was completely different at higher exposure times.

  19. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  20. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  1. Crystalline boron nitride aerogels

    DOEpatents

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-04-04

    This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

  2. Analytical study of whistler mode waves in presence of parallel DC electric field for relativistic plasma in the magnetosphere of Uranus

    NASA Astrophysics Data System (ADS)

    Pandey, R. S.; Kaur, Rajbir

    2016-10-01

    In present paper, field aligned whistler mode waves are analyzed, in the presence of DC field in background plasma having relativistic distribution function in the magnetosphere of Uranus. The work has been examined for relativistic Maxwellian and loss-cone distribution function. In both the cases, we have studied the effect of various plasma parameters on the growth rate of waves by using the method of characteristics and discussed using data provided by Voyager 2. Growth rate has increased by increasing the magnitude of electric field, temperature anisotropy, energy density and number density of particles for Maxwellian and loss-cone background. However, when relativistic factor (λ =√{ 1 -v2 /c2 }) increases, growth rate decreases. The significant increase in real frequency of whistler waves can be observed. The results can be used for comparative study of planetary magnetospheres. The derivation can also be adapted to study various other instabilities in magnetosphere of Uranus.

  3. Boron nitride composites

    DOEpatents

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  4. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

    NASA Astrophysics Data System (ADS)

    Yang, Jialing; Eller, Brianna S.; Zhu, Chiyu; England, Chris; Nemanich, Robert J.

    2012-09-01

    Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ˜0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.

  5. Determination of impurities in titanium nitride by slurry introduction axial viewed inductively coupled plasma optical emission spectrometry

    NASA Astrophysics Data System (ADS)

    Wang, Zheng; Ni, Zheming; Qiu, Deren; Tao, Guangyi; Yang, Pengyuan

    2005-03-01

    A method of slurry nebulization for inductively coupled plasma optical emission spectrometry (ICP-OES) applied to the analysis of titanium niride(TiN) was reported. The TiN slurry sample was prepared with adding dispersant polyacrylate amine or polyethylene imine for the stabilization and homogenization of suspension, and the amount of additives was optimized. A Babington type cross-flow nebulizer with V-groove was used for nebulization of the slurry for avoidance of blockage from the particles. The stability of slurry was characterized via zeta potential measurement, scanning electron microscope observation, particle size distrbution measurement and signal stability testing. For nm size TiN, calibration curves could be established by aqueous standards and the analytical results were in good accordance with the alkaline fusion method. For μm size TiN, a negative deviation was observed for most of elements and this deviation can be corrected by using Ti intrinsic internal standard method.

  6. Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

    SciTech Connect

    Kuboi, Nobuyuki Tatsumi, Tetsuya; Kinoshita, Takashi; Shigetoshi, Takushi; Fukasawa, Masanaga; Komachi, Jun; Ansai, Hisahiro

    2015-11-15

    The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness, etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching

  7. Role of DC Electric Fields and Wave Heating in Cavity Profiles of Depleted Density and Transverse Ion Acceleration in Laboratory and Space Plasmas

    NASA Astrophysics Data System (ADS)

    Koepke, M. E.; Reynolds, E. W.; Knudsen, D. J.

    2007-05-01

    Laboratory experiments on the WVU Q Machine, test-particle simulations, and Monte Carlo simulations are shown to provide evidence for explaining the inhomogeneity in both the plasma-density profile and the ion- temperature profile associated with cylindrically symmetric lower-hybrid cavities observed by the GEODESIC sounding rocket, the OEDIPUS-C sounding rocket, and the Freja satellite. Two potential contributions to the inhomogeneous profiles are identified. Both mechanisms (one dc and the other ac) rely on finite values of the Larmor radius and can result in nonlocal effects that deplete ion density within the cavity and enhance ion density immediately outside the cavity to form ion-gyroradius-scale shoulders encircling the cavity perimeter. In the absence of waves, a cylindrically symmetric, radial, DC electric field can be responsible for a polarization shift that produces such inhomogeneity in the density profile [1]. In the presence of waves, wave-induced transverse ion acceleration occurring within the cavity can produce such inhomogeneity in the density profile [2]. In combination, the two effects are shown to be comparable, necessitating an interpretation that includes both mechanisms for quantitative agreement. For the lab data, laser-induced fluorescence techniques provide high resolution in coordinate space and velocity space. [1] Reynolds et al., Inhomogeneity scale lengths in a magnetized, low temperature, collisionless, Q-machine plasma column containing perpendicular-velocity shear, Phys. Plasmas 13, 092106 (2006). [2] Knudsen et al., Lower-hybrid cavity density depletions as a result of transverse ion acceleration localized on the gyroradius scale, J. Geophys. Res. 109, A04212 (2004). This research is supported by NSF.

  8. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

    SciTech Connect

    Gacevic, Z.; Kehagias, Th.; Koukoula, T.; Komninou, Ph.

    2011-05-15

    We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their quantum well (QW) counterparts. The three-dimensional/two-dimensional nature of the structures has been verified using atomic force microscopy and transmission electron microscopy. The QD superlattices present higher internal quantum efficiency as compared to the respective QWs as a result of the three-dimensional carrier localization in the islands. In the QW samples, photoluminescence (PL) measurements point out a certain degree of carrier localization due to structural defects or thickness fluctuations, which is more pronounced in InGaN/GaN QWs due to alloy inhomogeneity. In the case of the QD stacks, carrier localization on potential fluctuations with a spatial extension smaller than the QD size is observed only for the InGaN QD-sample with the highest In content (peak emission around 2.76 eV). These results confirm the efficiency of the QD three-dimensional confinement in circumventing the potential fluctuations related to structural defects or alloy inhomogeneity. PL excitation measurements demonstrate efficient carrier transfer from the wetting layer to the QDs in the GaN/AlN system, even for low QD densities ({approx}10{sup 10} cm{sup -3}). In the case of InGaN/GaN QDs, transport losses in the GaN barriers cannot be discarded, but an upper limit to these losses of 15% is deduced from PL measurements as a function of the excitation wavelength.

  9. Recent developments in nitride chemistry

    SciTech Connect

    Niewa, R.; DiSalvo, F.J.

    1998-10-01

    The chemistry of ternary nitrides is reviewed with special focus on developments of the last two years (1996 and 1997). In particular, structures and properties of ternary and higher transition metal nitrides, main group nitrides, subnitrides, and nitride halides are compared, and a section on thermodynamics of ternary nitrides is included. Finally, methods for the preparation of gallium nitride single crystals are summarized.

  10. Structure and properties of nitrides on the surface of collagen

    NASA Astrophysics Data System (ADS)

    Mironov, M. M.; Grebenshchikova, M. M.

    2017-01-01

    A study of the structure and composition of titanium and hafnium nitride coatings, deposited by condensation from plasma phase, on the leather by methods of scanning electron microscopy and x-ray fluorescence analysis. Nanostructured nitride coatings don’t degrade the properties of the leather and also inhibits the growth of pathogenic microflora and slow the migration of chromium ions.

  11. Comment on: "Characterization of Microroughness Parameters in Titanium Nitride Thin Films Grown by DC Magnetron Sputtering" [J Fusion Energ DOI 10.1007/s10894-012-9510-z

    NASA Astrophysics Data System (ADS)

    Solaymani, Shahram; Ghaderi, Atefeh; Nezafat, Negin Beryani

    2012-12-01

    In recent article [Ali Gelali. Azin Ahmadpourian. Reza Bavadi. M. R. Hantehzadeh. Arman Ahmadpourian. J Fusion Energ DOI 10.1007/s10894-012-9510-z], Ali Geleli et al. studied the PSD and RMS Roughness parameters in Titanium Nitride thin films by AFM data and used the computed fractal dimension value of micrographs to describe the surface morphology of thin films. Here, the correct form of equations and relationship between PSD and RMS will be discussed.

  12. Investigation into nitrided spur gears

    SciTech Connect

    Yilbas, B.S.; Coban, A.; Nickel, J.; Sunar, M.; Sami, M.; Abdul Aleem, B.J.

    1996-12-01

    The cold forging method has been widely used in industry to produce machine parts. In general, gears are produced by shaping or hobbing. One of the shaping techniques is precision forging, which has several advantages over hobbing. In the present study, cold forging of spur gears from Ti-6Al-4V material is introduced. To improve the surface properties of the resulting gears, plasma nitriding was carried out. Nuclear reaction analysis was carried out to obtain the nitrogen concentration, while the micro-PIXE technique was used to determine the elemental distribution in the matrix after forging and nitriding processes. Scanning electron microscopy and x-ray powder diffraction were used to investigate the metallurgical changes and formation of nitride components in the surface region. Microhardness and friction tests were carried out to measure the hardness depth profile and friction coefficient at the surface. Finally, scoring failure tests were conducted to determine the rotational speed at which the gears failed. Three distinct regions were obtained in the nitride region, and at the initial stages of the scoring tests, failure in surface roughness was observed in the vicinity of the tip of the gear tooth. This occurred at a particular rotational speed and work input.

  13. Effect of Si on DC arc plasma generation from Al-Cr and Al-Cr-Si cathodes used in oxygen

    NASA Astrophysics Data System (ADS)

    Zhirkov, I.; Landälv, L.; Göthelid, E.; Ahlgren, M.; Eklund, P.; Rosen, J.

    2017-02-01

    Al2O3 alloyed with Cr is an important material for the tooling industry. It can be synthesized from an arc discharge using Al-Cr cathodes in an oxygen atmosphere. Due to formation of Al-rich oxide islands on the cathode surface, the arc process stability is highly sensitive to oxygen pressure. For improved stability, the use of Al0.70Cr0.25Si0.05 cathodes has previously been suggested, where Si may reduce island formation. Here, we have investigated the effect of Si by comparing plasma generation and thin film deposition from Al0.7Cr0.3 and Al0.7Cr0.25Si0.05 cathodes. Plasma ion composition, ion energies, ion charge states, neutral species, droplet formation, and film composition have been characterized at different O2 flow rates for arc currents of 60 and 90 A. Si and related compounds are detected in plasma ions and in plasma neutrals. Scanning electron microscopy and energy dispersive X-ray analysis show that the cathode composition and the film composition are the same, with Si present in droplets as well. The effect of Si on the process stability, ion energies, and ion charge states is found to be negligible compared to that of the arc current. The latter is identified as the most relevant parameter for tuning the properties of the reactive discharge. The present work increases the fundamental understanding of plasma generation in a reactive atmosphere, and provides input for the choice of cathode composition and process parameters in reactive DC arc synthesis.

  14. Study of sterilization-treatment in pure and N- doped carbon thin films synthesized by inductively coupled plasma assisted pulsed-DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Javid, Amjed; Kumar, Manish; Han, Jeon Geon

    2017-01-01

    Electrically-conductive nanocrystalline carbon films, having non-toxic and non-immunogenic characteristics, are promising candidates for reusable medical devices. Here, the pure and N- doped nanocrystalline carbon films are deposited by the assistance of inductively coupled plasma (ICP) in an unbalanced facing target pulsed-DC magnetron sputtering process. Through the optical emission spectroscopy study, the role of ICP assistance and N-doping on the reactive components/radicals during the synthesis is presented. The N-doping enhances the three fold bonding configurations by increasing the ionization and energies of the plasma species. Whereas, the ICP addition increases the plasma density to control the deposition rate and film structure. As a result, sputtering-throughput (deposition rate: 31-55 nm/min), electrical resistivity (4-72 Ωcm) and water contact angle (45.12°-54°) are significantly tailored. Electric transport study across the surface microchannel confirms the superiority of N-doped carbon films for sterilization stability over the undoped carbon films.

  15. Titanium Nitride Cermets

    DTIC Science & Technology

    1952-07-01

    7696i ’-Brewer, L., et al. Thermodynamic and Physical Properties of Nitrides. Carbides, Sulfides, i1licides, and Phosphides, Chemistry and Metallurgy of...12 Referen eCs 0 . ...................... • • • 14 WADC TR 52-155 iv LIST OF TABLES I Properties of Titanium Nitride Bodies...15 II Properties of Titanium Nitride-Nickel Bodies............16 III Properties of Titanium Nitride Cermets with Nickel,..... 17 Cobalt, and

  16. The use of ion chromatography-dc plasma atomic emission spectrometry for the speciation of trace metals. Annual performance report, February 1, 1989--January 31, 1992

    SciTech Connect

    Urasa, I.T.

    1991-09-20

    The original objects of this research program were: to interface d.c. plasma atomic emission spectrometer with an ion chromatograph; to characterize and optimize the combined systems for application in the speciation of metals in aqueous solutions; to use this system in the study of the solution chemistry of various metals; and to find ways in which the measurement sensitivity of the method can be enhanced, thereby allowing the detection of metal species at low ppb concentration levels. This approach has been used to study the chemistry of and speciate several elements in solution including: arsenic, chromium, iron, manganese, nickel phosphorus, platinum, selenium, and vanadium. During the course of this research, we have found that the solution chemistry of the elements studied and the speciation data obtained can vary considerably depending on the solution, and the chromatographic conditions employed. The speciation of chromium, iron, and vanadium was found to be highly influenced by the acidity of the sample. The element selective nature of the d.c. plasma detector allows these changes to be monitored, thereby providing quantitative information on the new moieties formed. New approaches are being developed including the use of chelating ligands as preconcentration agents for purposes of reducing further the detection limits of the elements of interest and to improve the overall element speciation scheme. New thrusts are being directed towards the employment of post-column derivatization method coupled with colorimetric measurements to detect and quantify metal species eluting from the chromatographic column. The influence of sample acidity on these investigations will be carefully evaluated. These new thrusts are described in the accompanying Project Renewal Proposal.

  17. Preparation of uranium nitride

    DOEpatents

    Potter, Ralph A.; Tennery, Victor J.

    1976-01-01

    A process for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride.

  18. Effect of N{sub 2} and Ar gas on DC arc plasma generation and film composition from Ti-Al compound cathodes

    SciTech Connect

    Zhirkov, Igor Rosen, Johanna; Oks, Efim

    2015-06-07

    DC arc plasma from Ti, Al, and Ti{sub 1−x}Al{sub x} (x = 0.16, 0.25, 0.50, and 0.70) compound cathodes has been characterized with respect to plasma chemistry (charged particles) and charge-state-resolved ion energy for Ar and N{sub 2} pressures in the range 10{sup −6} to 3 × 10{sup −2} Torr. Scanning electron microscopy was used for exploring the correlation between the cathode and film composition, which in turn was correlated with the plasma properties. In an Ar atmosphere, the plasma ion composition showed a reduction of Al of approximately 5 at. % compared to the cathode composition, while deposited films were in accordance with the cathode stoichiometry. Introducing N{sub 2} above ∼5 × 10{sup −3} Torr, lead to a reduced Al content in the plasma as well as in the film, and hence a 1:1 correlation between the cathode and film composition cannot be expected in a reactive environment. This may be explained by an influence of the reactive gas on the arc mode and type of erosion of Ti and Al rich contaminations, as well as on the plasma transport. Throughout the investigated pressure range, a higher deposition rate was obtained from cathodes with higher Al content. The origin of generated gas ions was investigated through the velocity rule, stating that the most likely ion velocities of all cathode elements from a compound cathode are equal. The results suggest that the major part of the gas ions in Ar is generated from electron impact ionization, while gas ions in a N{sub 2} atmosphere primarily originate from a nitrogen contaminated layer on the cathode surface. The presented results provide a contribution to the understanding processes of plasma generation from compound cathodes. It also allows for a more reasonable approach to the selection of composite cathode and experimental conditions for thin film depositions.

  19. Hydrodynamic and direct-current insulator-based dielectrophoresis (H-DC-iDEP) microfluidic blood plasma separation.

    PubMed

    Mohammadi, Mahdi; Madadi, Hojjat; Casals-Terré, Jasmina; Sellarès, Jordi

    2015-06-01

    Evaluation and diagnosis of blood alterations is a common request for clinical laboratories, requiring a complex technological approach and dedication of health resources. In this paper, we present a microfluidic device that owing to a novel combination of hydrodynamic and dielectrophoretic techniques can separate plasma from fresh blood in a microfluidic channel and for the first time allows optical real-time monitoring of the components of plasma without pre- or post-processing. The microchannel is based on a set of dead-end branches at each side and is initially filled using capillary forces with a 2-μL droplet of fresh blood. During this process, stagnation zones are generated at the dead-end branches and some red blood cells (RBCs) are trapped there. An electric field is then applied and dielectrophoretic trapping of RBCs is used to prevent more RBCs entering into the channel, which works like a sieve. Besides, an electroosmotic flow is generated to sweep the rest of the RBCs from the central part of the channel. Consequently, an RBC-free zone of plasma is formed in the middle of the channel, allowing real-time monitoring of the platelet behavior. To study the generation of stagnation zones and to ensure RBC trapping in the initial constrictions, two numerical models were solved. The proposed experimental design separates up to 0.1 μL blood plasma from a 2-μL fresh human blood droplet. In this study, a plasma purity of 99 % was achieved after 7 min, according to the measurements taken by image analysis. Graphical Abstract Schematics of a real-time plasma monitoring system based on a Hydrodynamic and direct-current insulator-based dielectrophoresis microfluidic channel.

  20. Modifications in Structural, Electrical, Electronic and Mechanical Properties of Titanium Thin Films under different Gas Plasmas

    NASA Astrophysics Data System (ADS)

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.

    2015-09-01

    In the recent past, Titanium thin films can be grown over different substrates such as silicon, glass and quartz by using versatile deposition techniques DC, RF sputtering, electronic beam and thermal evaporation etc. The grown films are then exposed in different gas environments for individual application. It has been found that Titanium nitride exhibits good chemical stability, mechanical and electrical properties. To investigate these properties in titanium nitride thin films, we have developed a new approach hot cathode arc discharge plasma system. By using this technique, we can measure plasma and nitriding parameters independently. In the present work, we have investigated gases mixture (Nitrogen, Argon and Hydrogen) effect on the structural, mechanical, electrical and electronic properties in plasma system. We have used 100% N2, 50% N2 + 50% Ar and 50% N2 + 50% H2 gases ratio for plasma nitriding. Structural and electronic structure properties are measured from X-ray diffractions (XRD) and X-ray photoelectron spectroscopy (XPS) respectively. The surface morphology of these films were measured using Atomic Force Microscopy (AFM) and the nano-indentation mode is used to find out the hardness of the samples. Government of India.

  1. Bidirectional DC/DC Converter

    NASA Astrophysics Data System (ADS)

    Pedersen, F.

    2008-09-01

    The presented bidirectional DC/DC converter design concept is a further development of an already existing converter used for low battery voltage operation.For low battery voltage operation a high efficient low parts count DC/DC converter was developed, and used in a satellite for the battery charge and battery discharge function.The converter consists in a bidirectional, non regulating DC/DC converter connected to a discharge regulating Buck converter and a charge regulating Buck converter.The Bidirectional non regulating DC/DC converter performs with relatively high efficiency even at relatively high currents, which here means up to 35Amps.This performance was obtained through the use of power MOSFET's with on- resistances of only a few mille Ohms connected to a special transformer allowing paralleling several transistor stages on the low voltage side of the transformer. The design is patent protected. Synchronous rectification leads to high efficiency at the low battery voltages considered, which was in the range 2,7- 4,3 Volt DC.The converter performs with low switching losses as zero voltage zero current switching is implemented in all switching positions of the converter.Now, the drive power needed, to switch a relatively large number of low Ohm , hence high drive capacitance, power MOSFET's using conventional drive techniques would limit the overall conversion efficiency.Therefore a resonant drive consuming considerable less power than a conventional drive circuit was implemented in the converter.To the originally built and patent protected bidirectional non regulating DC/DC converter, is added the functionality of regulation.Hereby the need for additional converter stages in form of a Charge Buck regulator and a Discharge Buck regulator is eliminated.The bidirectional DC/DC converter can be used in connection with batteries, motors, etc, where the bidirectional feature, simple design and high performance may be useful.

  2. M3D-C1 simulations of the plasma response to n = 3 magnetic perturbations applied to the NSTX-U snowflake divertor

    NASA Astrophysics Data System (ADS)

    Canal, G. P.; Ferraro, N. M.; Evans, T. E.; Osborne, T. H.; Menard, J. E.; Ahn, J.-W.; Maingi, R.; Wingen, A.; Ciro, D.; Frerichs, H.; Schmitz, O.; Soukhanoviskii, V.; Waters, I.

    2016-10-01

    Single- and two-fluid resistive magnetohydrodynamic simulations, performed with the code M3D-C1, are used to investigate the effect of n = 3 magnetic perturbations on the SF divertor configuration. The calculations are based on simulated NSTX-U plasmas and the results show that additional and longer magnetic lobes are created in the null-point region of the SF configuration, compared to those in the conventional single-null. The intersection of these additional and longer lobes with the divertor plates are expected to cause more striations in the particle and heat flux target profiles. In addition, the results indicate that the size of the magnetic lobes, in both single-null and SF configurations, are more sensitive to resonant than to non-resonant magnetic perturbations. The results also suggest that lower values of current in non-axisymmetric control coils close enough to the primary x-point would be required to suppress edge localized modes in plasmas with the SF configuration. This work has been supported by the US Department of Energy, Office of Science, Office of Fusion Energy Science under DOE Award DE-SC0012706.

  3. Oxidation Protection of Uranium Nitride Fuel using Liquid Phase Sintering

    SciTech Connect

    Dr. Paul A. Lessing

    2012-03-01

    Two methods are proposed to increase the oxidation resistance of uranium nitride (UN) nuclear fuel. These paths are: (1) Addition of USi{sub x} (e.g. U3Si2) to UN nitride powder, followed by liquid phase sintering, and (2) 'alloying' UN nitride with various compounds (followed by densification via Spark Plasma Sintering or Liquid Phase Sintering) that will greatly increase oxidation resistance. The advantages (high thermal conductivity, very high melting point, and high density) of nitride fuel have long been recognized. The sodium cooled BR-10 reactor in Russia operated for 18 years on uranium nitride fuel (UN was used as the driver fuel for two core loads). However, the potential advantages (large power up-grade, increased cycle lengths, possible high burn-ups) as a Light Water Reactor (LWR) fuel are offset by uranium nitride's extremely low oxidation resistance (UN powders oxidize in air and UN pellets decompose in hot water). Innovative research is proposed to solve this problem and thereby provide an accident tolerant LWR fuel that would resist water leaks and high temperature steam oxidation/spalling during an accident. It is proposed that we investigate two methods to increase the oxidation resistance of UN: (1) Addition of USi{sub x} (e.g. U{sub 3}Si{sub 2}) to UN nitride powder, followed by liquid phase sintering, and (2) 'alloying' UN nitride with compounds (followed by densification via Spark Plasma Sintering) that will greatly increase oxidation resistance.

  4. Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature

    NASA Astrophysics Data System (ADS)

    Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Izumi, Kohei; Otani, Yohei; Ishizaki, Hiroki; Ono, Toshiro

    2012-09-01

    This paper reports on the thermal improvement of Si3N4/GeNx/Ge structures. After the Si3N4 (5 nm)/GeNx (2 nm) stacks were prepared on Ge substrates by electron-cyclotron-resonance plasma nitridation and sputtering at room temperature, they were thermally annealed in atmospheric N2 + 10% H2 ambient at temperatures from 400 to 600 °C. It was demonstrated that the electronic properties of the GeNx/Ge interfaces were thermally improved at temperatures of up to 500 °C with a minimum interface trap density (Dit) of ˜1×1011 cm-2 eV-1 near the Ge midgap, whereas the interface properties were slightly degraded after annealing at 600 °C with a minimum Dit value of ˜4×1011 cm-2 eV-1.

  5. Milliwatt dc/dc Inverter

    NASA Technical Reports Server (NTRS)

    Mclyman, C. W.

    1983-01-01

    Compact dc/dc inverter uses single integrated-circuit package containing six inverter gates that generate and amplify 100-kHz square-wave switching signal. Square-wave switching inverts 10-volt local power to isolated voltage at another desired level. Relatively high operating frequency reduces size of filter capacitors required, resulting in small package unit.

  6. Spherical boron nitride particles and method for preparing them

    DOEpatents

    Phillips, Jonathan; Gleiman, Seth S.; Chen, Chun-Ku

    2003-11-25

    Spherical and polyhedral particles of boron nitride and method of preparing them. Spherical and polyhedral particles of boron nitride are produced from precursor particles of hexagonal phase boron nitride suspended in an aerosol gas. The aerosol is directed to a microwave plasma torch. The torch generates plasma at atmospheric pressure that includes nitrogen atoms. The presence of nitrogen atoms is critical in allowing boron nitride to melt at atmospheric pressure while avoiding or at least minimizing decomposition. The plasma includes a plasma hot zone, which is a portion of the plasma that has a temperature sufficiently high to melt hexagonal phase boron nitride. In the hot zone, the precursor particles melt to form molten particles that acquire spherical and polyhedral shapes. These molten particles exit the hot zone, cool, and solidify to form solid particles of boron nitride with spherical and polyhedral shapes. The molten particles can also collide and join to form larger molten particles that lead to larger spherical and polyhedral particles.

  7. Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering

    SciTech Connect

    Belkerk, B. E.; Soussou, A.; Carette, M.; Djouadi, M. A.; Scudeller, Y.

    2012-10-08

    This Letter reports the thermal conductivity of aluminium nitride (AlN) thin-films deposited by reactive DC magnetron sputtering on single-crystal silicon substrates (100) with varying plasma and magnetic conditions achieving different crystalline qualities. The thermal conductivity of the films was measured at room temperature with the transient hot-strip technique for film thicknesses ranging from 100 nm to 4000 nm. The thermal conductivity was found to increase with the thickness depending on the synthesis conditions and film microstructure. The conductivity in the bulk region of the films, so-called intrinsic conductivity, and the boundary resistance were in the range [120-210] W m{sup -1} K{sup -1} and [2-30 Multiplication-Sign 10{sup -9}] K m{sup 2} W{sup -1}, respectively, in good agreement with microstructures analysed by x-ray diffraction, high-resolution-scanning-electron-microscopy, and transmission-electron-microscopy.

  8. Impact of sputter deposition parameters on molybdenum nitride thin film properties

    NASA Astrophysics Data System (ADS)

    Stöber, L.; Konrath, J. P.; Krivec, S.; Patocka, F.; Schwarz, S.; Bittner, A.; Schneider, M.; Schmid, U.

    2015-07-01

    Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber.

  9. Methods of forming boron nitride

    DOEpatents

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  10. Charge trapping in nitrided HfSiO gate dielectric layers

    SciTech Connect

    Vellianitis, G.; Rittersma, Z. M.; Petry, J.

    2006-08-28

    The effects of HfSiO nitridation on charge trapping and long-term dielectric reliability are investigated. A comparison between decoupled plasma nitridation, annealing in NH{sub 3}, and no nitridation is made. It was found that thinner HfSiO layers show less trapped charge. Decoupled plasma nitridation resulted always in a larger hysteresis in the characteristics. A common behavior in all samples was seen at elevated temperatures, which corresponds to lower trapped charge and higher leakage current. Dependence between the trapped charge and the leakage current changes with temperature was established.

  11. Evaluation of nitrided titanium separator plates for proton exchange membrane electrolyzer cells

    NASA Astrophysics Data System (ADS)

    Toops, Todd J.; Brady, Michael P.; Zhang, Feng-Yuan; Meyer, Harry M.; Ayers, Katherine; Roemer, Andrew; Dalton, Luke

    2014-12-01

    Proton exchanges membrane (PEM) regenerative fuel cell electrolysis of water is of great recent interest as a hydrogen generation technology. Anode side titanium current collectors and separator plates used in these applications typically employ coatings of platinum group metals to achieve durability and performance requirements in the high voltage, oxidizing environment. The present work assessed the potential for lower cost surface modified titanium by both thermal (gas) nitridation and plasma nitridation approaches. The nitrided Ti was found to result in far less hydrogen uptake in coupon testing than did Pt-plated Ti. Short-term (48 h) single-cell performance at 25 °C was approximately 13% better (lower voltage) at 1.2 A cm-2 for thermal and plasma nitrided plates vs. untreated Ti. However, at 50 °C and 1.5 A cm-2, the thermally nitrided plate exhibited only on the order of 3% better behavior (lower voltage) compared to the untreated Ti and plasma nitrided Ti. Durability testing for 500 h resulted in only a minor degradation in cell performance, on the order of 1-2% voltage increase, with the best behavior exhibited by the thermally nitrided Ti plate. Despite their relatively stable cell performance, extensive local oxidation of the thermally nitrided and plasma nitrided flow field regions was observed.

  12. Silicon nitride grating waveguide based directional coupler

    NASA Astrophysics Data System (ADS)

    Feng, Jijun; Li, Anyuan; Akimoto, Ryoichi; Zeng, Heping

    2016-10-01

    Silicon nitride is a promising wave-guiding material for integrated photonics applications with a wide transparency bandwidth from visible to mid-infrared, with a superior performance in fiber-coupling and propagation losses, more tolerant fabrication process to the structure parameters variation and compatible with the CMOS technology. Directional coupler (DC) is very popular for realizing beam splitter because of its structural simplicity and no excess loss intrinsically. Here, a conventional silicon nitride directional coupler, three-dimensional vertical coupler, and grating waveguide assisted coupler are designed and fabricated, and compared with each other. A grating waveguide based coupler with a period of 300 nm and coupling length of 26 um, can realize a wideband 3-dB splitter for the wavelength in the range from 1540 to 1620 nm, for a transverse electric (TE) polarized wave. With further optimization of the grating period and duty cycle, the device performance can be further improved with a wider bandwidth.

  13. Method for preparing actinide nitrides

    DOEpatents

    Bryan, G.H.; Cleveland, J.M.; Heiple, C.R.

    1975-12-01

    Actinide nitrides, and particularly plutonium and uranium nitrides, are prepared by reacting an ammonia solution of an actinide compound with an ammonia solution of a reactant or reductant metal, to form finely divided actinide nitride precipitate which may then be appropriately separated from the solution. The actinide nitride precipitate is particularly suitable for forming nuclear fuels.

  14. Ion-nitriding of Maraging steel (250 Grade) for Aeronautical application

    NASA Astrophysics Data System (ADS)

    Shetty, K.; Kumar, S.; Rao, P. R.

    2008-03-01

    Ion nitriding is one of the surface modification processes to obtain better wear resistance of the component. Maraging steel (250 Grade) is used to manufacture a critical component in the control surface of a combat aircraft. This part requires high strength and good wear resistance. Maraging steels belong to a new class of high strength steels with the combination of strength and toughness that are among the highest attainable in general engineering alloys. Good wear resistance is achieved by ion-nitriding (also called as plasma nitriding or glow discharge nitriding) process of case nitriding. Ion-nitriding is a method of surface hardening using glow discharge technology to introduce nascent (elemental) nitrogen to the surface of a metal part for subsequent diffusion into the material. In the present investigation, ion-nitriding of Maraging steel (250 grade) is carried out at 450°C and its effect on microstructure and various properties is discussed.

  15. The Structure and Bonding State for Fullerene-Like Carbon Nitride Films with High Hardness Formed by Electron Cyclotron Resonance Plasma Sputtering

    NASA Astrophysics Data System (ADS)

    Kamata, Tomoyuki; Niwa, Osamu; Umemura, Shigeru; Hirono, Shigeru

    2012-12-01

    We studied pure carbon films and carbon nitride (CN) films by using electron cyclotron resonance (ECR) sputtering. The main feature of this method is high density ion irradiation during deposition, which enables the pure carbon films to have fullerene-like (FL) structures without nitrogen incorporation. Furthermore, without substrate heating, the ECR sputtered CN films exhibited an enhanced FL microstructure and hardness comparable to that of diamond at intermediate nitrogen concentration. This microstructure consisted of bent and cross-linked graphene sheets where layered areas remarkably decreased due to increased sp3 bonding. Under high nitrogen concentration conditions, the CN films demonstrated extremely low hardness because nitrile bonding not only decreased the covalent-bonded two-dimensional hexagonal network but also annihilated the bonding there. By evaluating lattice images obtained by transmission electron microscopy and the bonding state measured by X-ray photoelectron spectroscopy, we classified the ECR sputtered CN films and offered phase diagram and structure zone diagram.

  16. Monomeric Immunoglobulin A from Plasma Inhibits Human Th17 Responses In Vitro Independent of FcαRI and DC-SIGN

    PubMed Central

    Saha, Chaitrali; Das, Mrinmoy; Patil, Veerupaxagouda; Stephen-Victor, Emmanuel; Sharma, Meenu; Wymann, Sandra; Jordi, Monika; Vonarburg, Cédric; Kaveri, Srini V.; Bayry, Jagadeesh

    2017-01-01

    Circulating immunoglobulins including immunoglobulin G (IgG) and IgM play a critical role in the immune homeostasis by modulating functions of immune cells. These functions are mediated in part by natural antibodies. However, despite being second most abundant antibody in the circulation, the immunoregulatory function of IgA is relatively unexplored. As Th17 cells are the key mediators of a variety of autoimmune, inflammatory, and allergic diseases, we investigated the ability of monomeric IgA (mIgA) isolated from pooled plasma of healthy donors to modulate human Th17 cells. We show that mIgA inhibits differentiation and amplification of human Th17 cells and the production of their effector cytokine IL-17A. mIgA also suppresses IFN-γ responses under these experimental conditions. Suppressive effect of mIgA on Th17 responses is associated with reciprocal expansion of FoxP3-positive regulatory T cells. The effect of mIgA on Th17 cells is dependent on F(ab′)2 fragments and independent of FcαRI (CD89) and DC-SIGN. Mechanistically, the modulatory effect of mIgA on Th17 cells implicates suppression of phosphorylation of signal transducer and activator of transcription 3. Furthermore, mIgA binds to CD4+ T cells and recognizes in a dose-dependent manner the receptors for cytokines (IL-6Rα and IL-1RI) that mediate Th17 responses. Our findings thus reveal novel anti-inflammatory functions of IgA and suggest potential therapeutic utility of mIgA in autoimmune and inflammatory diseases that implicate Th17 cells. PMID:28352269

  17. X-ray diffraction study of gold nitride films: Observation of a solid solution phase

    NASA Astrophysics Data System (ADS)

    Alves, L.; Hase, T. P. A.; Hunt, M. R. C.; Brieva, A. C.; Šiller, L.

    2008-12-01

    The structure of nitride containing gold films produced by reactive ion sputtering and nitrogen plasma etching is investigated using x-ray photoelectron spectroscopy and x-ray diffraction. It is found that gold nitride is a solid solution of nitrogen atoms dissolved in a fcc gold matrix. Differences between the strain and lattice parameters of gold and gold nitride films were observed and are explained by interstitial nitrogen present in the latter.

  18. Synthesis of aluminium nitride/boron nitride composite materials

    SciTech Connect

    Xiao, T.D. . Polymer Science Program and Dept. of Chemistry); Gonsalves, K.E. . Polymer Science Program and Dept. of Chemistry Univ. of Connecticut, Storrs, CT . Dept. of Chemistry); Strutt, P.R. . Dept. of Metallurgy)

    1993-04-01

    Aluminum nitride/boron nitride composite was synthesized by using boric acid, urea, and aluminum chloride (or aluminum lactate) as the starting compounds. The starting materials were dissolved in water and mixed homogeneously. Ammonolysis of this aqueous solution resulted in the formation of a precomposite gel, which converted into the aluminum nitride/boron nitride composite on further heat treatment. Characterization of both the precomposite and the composite powders included powder X-ray diffraction, Fourier transform infrared spectroscopy, and scanning electron microscopy. Analysis of the composite revealed that the aluminum nitride phase had a hexagonal structure, and the boron nitride phase a turbostratic structure.

  19. Gallium nitride optoelectronic devices

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Chu, S. S.

    1972-01-01

    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  20. Boron nitride composites

    DOEpatents

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  1. Boron Nitride Nanotubes

    NASA Technical Reports Server (NTRS)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  2. Boron nitride nanotubes

    DOEpatents

    Smith, Michael W [Newport News, VA; Jordan, Kevin [Newport News, VA; Park, Cheol [Yorktown, VA

    2012-06-06

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  3. Substrate Frequency Effects on Cr x N Coatings Deposited by DC Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Obrosov, Aleksei; Naveed, Muhammad; Volinsky, Alex A.; Weiß, Sabine

    2017-01-01

    Controlled ion bombardment is a popular method to fabricate desirable coating structures and modify their properties. Substrate biasing at high frequencies is a possible technique, which allows higher ion density at the substrate compared with DC current bias. Moreover, high ion energy along with controlled adatom mobility would lead to improved coating growth. This paper focuses on a similar type of study, where effects of coating growth and properties of DC magnetron-sputtered chromium nitride (Cr x N) coatings at various substrate bias frequencies are discussed. Cr x N coatings were deposited by pulsed DC magnetron sputtering on Inconel 718 and (100) silicon substrates at 110, 160 and 280 kHz frequency at low duty cycle. Coating microstructure and morphology were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), scratch adhesion testing and nanoindentation. Results indicate a transformation of columnar into glassy structure of Cr x N coatings with the substrate bias frequency increase. This transformation is attributed to preferential formation of the Cr2N phase at high frequencies compared with CrN at low frequencies. Increase in frequency leads to an increase in deposition rate, which is believed to be due to increase in plasma ion density and energy of the incident adatoms. An increase in coating hardness along with decrease in elastic modulus was observed at high frequencies. Scratch tests show a slight increase in coating adhesion, whereas no clear increase in coating roughness can be found with the substrate bias frequency.

  4. Substrate Frequency Effects on Cr x N Coatings Deposited by DC Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Obrosov, Aleksei; Naveed, Muhammad; Volinsky, Alex A.; Weiß, Sabine

    2016-11-01

    Controlled ion bombardment is a popular method to fabricate desirable coating structures and modify their properties. Substrate biasing at high frequencies is a possible technique, which allows higher ion density at the substrate compared with DC current bias. Moreover, high ion energy along with controlled adatom mobility would lead to improved coating growth. This paper focuses on a similar type of study, where effects of coating growth and properties of DC magnetron-sputtered chromium nitride (Cr x N) coatings at various substrate bias frequencies are discussed. Cr x N coatings were deposited by pulsed DC magnetron sputtering on Inconel 718 and (100) silicon substrates at 110, 160 and 280 kHz frequency at low duty cycle. Coating microstructure and morphology were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), scratch adhesion testing and nanoindentation. Results indicate a transformation of columnar into glassy structure of Cr x N coatings with the substrate bias frequency increase. This transformation is attributed to preferential formation of the Cr2N phase at high frequencies compared with CrN at low frequencies. Increase in frequency leads to an increase in deposition rate, which is believed to be due to increase in plasma ion density and energy of the incident adatoms. An increase in coating hardness along with decrease in elastic modulus was observed at high frequencies. Scratch tests show a slight increase in coating adhesion, whereas no clear increase in coating roughness can be found with the substrate bias frequency.

  5. Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF{sup +}, CF{sub 2}{sup +}, CHF{sub 2}{sup +}, and CH{sub 2}F{sup +} ions

    SciTech Connect

    Ito, Tomoko; Karahashi, Kazuhiro; Fukasawa, Masanaga; Tatsumi, Tetsuya; Hamaguchi, Satoshi

    2011-09-15

    Hydrogen in hydrofluorocarbon plasmas plays an important role in silicon nitride (Si{sub 3}N{sub 4}) reactive ion etching. This study focuses on the elementary reactions of energetic CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions with Si{sub 3}N{sub 4} surfaces. In the experiments, Si{sub 3}N{sub 4} surfaces were irradiated by monoenergetic (500-1500 eV) beams of CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions as well as hydrogen-free CF{sub 2}{sup +} and CF{sup +} ions generated by a mass-selected ion beam system and their etching yields and surface properties were examined. It has been found that, when etching takes place, the etching rates of Si{sub 3}N{sub 4} by hydrofluorocarbon ions, i.e., CHF{sub 2}{sup +} and CH{sub 2}F{sup +}, are higher than those by the corresponding fluorocarbon ions, i.e., CF{sub 2}{sup +} and CF{sup +}, respectively. When carbon film deposition takes place, it has been found that hydrogen of incident hydrofluorocarbon ions tends to scavenge fluorine of the deposited film, reducing its fluorine content.

  6. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

    2005-05-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (-In2O3) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal ()-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although -In2O3 grains with wide band-gap energy were formed in In film by N2 annealing, they were not easily formed in N2-annealed InN films. Even if they were not detected in N2-annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]0.5%). Although [O]1% could be estimated by investigating In2O3 grains formed in N2-annealed InN films, [O]0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In2O3 grains formed by H2 annealing with higher reactivity with InN and O2, using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films.

  7. Ion-nitriding of the AISI M2 high speed tool steel and comparison of its mechanical properties with nitrided steels

    SciTech Connect

    Cimen, O.; Alnipak, B.

    1995-12-31

    In the past it was shown that plasma diffusion treatment of steels has several advantages over conventional processes such as gas or salt bath nitriding and nitrocarburizing. Plasma diffusion treatment allows close control of the process so that surface layers with defined microstructures and properties can be obtained. The amount of {gamma}{prime} and {epsilon} phase present can be easily controlled. In this paper, variation of surfaces hardness properties of AISI M2 high speed tool speed after ion nitriding treatments were investigated. The mechanical and electro-chemical advantages of the ion nitrided structures were compared with the other methods.

  8. Experimental studies of radiation resistance of boron nitride, C2C ceramics Al2O3 and carbon-fiber composites using a PF-1000 plasma-focus device

    NASA Astrophysics Data System (ADS)

    Gribkov, V. A.; Tuniz, C.; Demina, E. V.; Dubrovsky, A. V.; Pimenov, V. N.; Maslyaev, S. V.; Gaffka, R.; Gryaznevich, M.; Skladnik-Sadowska, E.; Sadowski, M. J.; Miklaszewski, R.; Paduch, M.; Scholz, M.

    2011-04-01

    This paper reports on experiments undertaken to compare the radiation resistance of two types of ceramics, boron nitride (BN) and pure alumina (Al2O3), which are used in a TAEA antenna coil installed in the MAST spherical tokamak. Samples of the investigated materials (bulk BN and a 20 μm film of Al2O3 on Al substrate) were exposed on the axis of the plasma-focus PF-1000 device, which can emit intense streams of hot plasma (v≈107 cm s-1 and Npl≈1018 cm-3) and fast deuteron beams (Ei≈100 keV). The most powerful plasma-ion pulse lasted 0.2-1.0 μs and its intensity decayed in about 100 μs. The irradiation process was diagnosed using fast optical cameras, laser interferometry and optical spectrometry. Experiments were performed at power flux densities equal to 109-1010 W cm-2 or 108-109 W cm-2 during the most powerful stage of the interaction process. The irradiated specimens were investigated by means of optical microscopy and x-ray structure analysis (XRSA). It was shown that at 1010 W cm-2 pulses the Al2O3 coating was completely evaporated, whereas a surface of the BN sample became smoother than in the virgin one. A direct comparison of both samples after the action of 108 W cm-2 pulses demonstrated a wave-like structure (more distinct on Al2O3). Weighing of these samples showed, however, that the evaporation of BN was about two times stronger than that of Al2O3 in spite of the lower irradiation flux; the XRSA showed no evidence of cracking of Al2O3 after these pulses. The insulation properties of Al2O3 did not decline, and the Al2O3 coating may be potentially more beneficial, provided that it is kept below its melting point. Characteristic features of damages of a material based on the carbon-fiber composite with additions of silicium carbide (SiC; 8-40% volumetric) were also investigated. It was found that at q=109 W cm-2, the surface erosion is associated with sputtering and evaporation. The degree of this erosion depends on the fibers' orientation in

  9. Remote quantitative temperature and thickness measurements of plasma-deposited titanium nitride thin coatings on steel using a laser interferometric thermoreflectance optical thermometer

    SciTech Connect

    Liu Yue; Mandelis, Andreas; Choy, Mervyn; Wang, Chinhua; Segal, Lee

    2005-08-15

    An optical thermometer based on the principle of laser thermoreflectance has been introduced to monitor the surface temperature of thin coatings on steel parts undergoing an industrial titanium nitride (TiN) alloy deposition process. To study the feasibility of the optical thermometer, various thermo-optical parameters of TiN affected by the deposition process have been investigated; namely, the reflectance-temperature relation, the thermoreflectance coefficient, and the coating thickness dependence of thermoreflectance and of total reflectance. A theory of interferometric thermoreflectance has been introduced to model the total reflectance variations during the coating process. An inverse reflectance-temperature relation for the TiN-D2 steel substrate system has been found and a first-order Taylor series expansion used to model thermoreflectance has been shown to yield a thermoreflectance coefficient which is independent of temperature. Both results are in quantitative agreement with the Drude-Zener theory of conductors and semi-conductors. An empirical formula has been derived to effectively model the experimental thermoreflectance coefficient dependence of the TiN-D2 steel system on TiN coating thickness, in qualitative agreement with scattering mechanisms of the Boltzmann transport theory in conductors and semiconductors. The good agreement of theoretical interferometric thermoreflectance simulations with in situ measurements during a specific industrial TiN sputter-coating growth process and the independence of the thermoreflectance and thin-coating-thickness reflectance coefficients from temperature show the potential of using this nonintrusive noncontacting technique as an optical thermometer to determine surface temperatures of physically inaccessible samples undergoing industrial coating deposition processes.

  10. Research on Fast Nitriding by Direct Current Field Base on the Deep-layer QPQ Technology

    NASA Astrophysics Data System (ADS)

    Wang, K.; Luo, D. F.; Zhang, L.

    In recent years the QPQ technical innovator is the development and application of deep-layer QPQ. But also brings a lot of problems need to solve. This article introduces a new technology use direct current field at low temperature and short time base on the deep-layer QPQ. Use 45# as material, we make a comparative between DC treatment and normal treatment at the same condition. The results show that the DC treatment was beneficial forms of the nitrided layer and the performance index was the same as normal treatment. The formation of the nitrided layer in the direct current field situation is analyzed.

  11. Adaptable DC offset correction

    NASA Technical Reports Server (NTRS)

    Golusky, John M. (Inventor); Muldoon, Kelly P. (Inventor)

    2009-01-01

    Methods and systems for adaptable DC offset correction are provided. An exemplary adaptable DC offset correction system evaluates an incoming baseband signal to determine an appropriate DC offset removal scheme; removes a DC offset from the incoming baseband signal based on the appropriate DC offset scheme in response to the evaluated incoming baseband signal; and outputs a reduced DC baseband signal in response to the DC offset removed from the incoming baseband signal.

  12. Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

    SciTech Connect

    Sun, J.; Wu, A.M.; Xu, N.; Ying, Z.F.; Shen, X.K.; Dong, Z.B.; Wu, J.D.; Shi, L.Q.

    2005-11-15

    Using reactive pulsed laser deposition assisted by electron cyclotron resonance (ECR) plasma, we have synthesized GaN thin films from a polycrystalline GaAs target at low temperatures. This was achieved by ablating the GaAs target in the reactive environment of a nitrogen plasma generated from ECR microwave discharge in pure nitrogen gas and depositing the films with concurrent bombardment by the low-energy nitrogen plasma stream. High-energy ion backscattering spectroscopy analysis shows that the synthesized films are gallium rich. Characterizations by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy confirm the presence of GaN bonds in the films. The recorded absorption spectrum also reveals GaN stretching mode characteristic of the hexagonal GaN phase. The synthesized GaN films are transparent in the visible region and have a band gap of 3.38 eV. Optical emission from the plume during film deposition reveals that the plume created by pulsed laser ablation of the GaAs target consists mainly of monoatomic atoms and ions of gallium and arsenic. Mechanisms responsible for the formation of GaN molecules and the growth of GaN films are also discussed.

  13. Nitride quantum light sources

    NASA Astrophysics Data System (ADS)

    Zhu, T.; Oliver, R. A.

    2016-02-01

    Prototype nitride quantum light sources, particularly single-photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offsets available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches has been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single-photon stream and excessive spectral diffusion of the quantum dot emission wavelength. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides.

  14. Laser nitriding and laser carburizing of surfaces

    NASA Astrophysics Data System (ADS)

    Schaaf, Peter

    2003-11-01

    Laser irradiation of surfaces with short pulses in reactive atmospheres (nitrogen, methane) can lead to very effective nitrification and carburization via complicated laser-surface-gas-plasma-interactions. This laser nitriding and laser carburizing and their basic underlying phenomena will be presented and partly explained by results of example materials (iron, titanium, aluminum, silicon) where nitride and carbide coatings can be formed by fast and easily by Excimer Laser, Nd:YAG laser, Free Electron Laser and also by femtosecond Ti:sapphire laser. This implies laser pulse durations from the nanosecond to the femtosecond regime and wavelengths from ultra-violet to infrared. The resulting surfaces, thin films, coatings and their properties are investigated by combining Mossbauer Spectroscopy, x-ray diffraction, x-ray absorption spectroscopy, Nanoindentation, Resonant Nuclear Reaction Analysis, and Rutherford Backscattering Spectroscopy.

  15. Cubic nitride templates

    DOEpatents

    Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

    2013-04-30

    A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

  16. Theory of gain in group-III nitride lasers

    SciTech Connect

    Chow, W.W.; Wright, A.F.; Girndt, A.

    1997-06-01

    A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

  17. Nitriding of restored crankshafts

    NASA Astrophysics Data System (ADS)

    Ponukalin, V. V.; Aleksandrov, V. N.

    1984-02-01

    The following technology is recommended for restoration of steel crankshafts: facing with an Sv-08 electrode wire under an AN-348A flux with chromium and niobium introduced into the melt in accordance with the method used at automotive-repair plants and subsequent gas nitriding at (570±10)°C for 12 h.

  18. Nitride passivation of the interface between high-k dielectrics and SiGe

    SciTech Connect

    Sardashti, Kasra; Hu, Kai-Ting; Tang, Kechao; McIntyre, Paul; Madisetti, Shailesh; Oktyabrsky, Serge; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Naomi; Kachian, Jessica; Dong, Lin; Fruhberger, Bernd; Kummel, Andrew C.

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  19. Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

    NASA Astrophysics Data System (ADS)

    Yang, Jialing; Eller, Brianna S.; Nemanich, Robert J.

    2014-09-01

    The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH4OH treatment and an in-situ elevated temperature NH3 plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects. After the cleaning process, carbon contamination decreased below the x-ray photoemission spectroscopy detection limit, and the oxygen coverage stabilized at ˜1 monolayer on both Ga- and N-face GaN. In addition, Ga- and N-face GaN had an upward band bending of 0.8 ± 0.1 eV and 0.6 ± 0.1 eV, respectively, which suggested the net charge of the surface states and polarization bound charge was similar on Ga- and N-face GaN. Furthermore, three dielectrics (HfO2, Al2O3, and SiO2) were prepared by plasma-enhanced atomic layer deposition on Ga- or N-face GaN and annealed in N2 ambient to investigate the effect of the polarization charge on the interface electronic structure and band offsets. The respective valence band offsets of HfO2, Al2O3, and SiO2 with respect to Ga- and N-face GaN were 1.4 ± 0.1, 2.0 ± 0.1, and 3.2 ± 0.1 eV, regardless of dielectric thickness. The corresponding conduction band offsets were 1.0 ± 0.1, 1.3 ± 0.1, and 2.3 ± 0.1 eV, respectively. Experimental band offset results were consistent with theoretical calculations based on the charge neutrality level model. The trend of band offsets for dielectric/GaN interfaces was related to the band gap and/or the electronic part of the dielectric constant. The effect of polarization charge on band offset was apparently screened by the dielectric-GaN interface states.

  20. Exploiting the Negative Polarization Properties of Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) Heterostructures to Achieve Frequency Doubled Blue-green Lasers with Deep UV (250 nm) Emission (Year 2)

    DTIC Science & Technology

    2011-05-01

    100 A/cm 2 , well beyond the current density 10–25 A/cm 2 at which conventional p-up, Ga-polar InGaN /GaN multi-quantum well LEDs exhibit significant...nitride ICP inductively coupled plasma InGaN indium gallium nitride KDP potassium di-hydrogen phosphate LBO lithium triborate LEDs light...Exploiting the Negative Polarization Properties of Indium Gallium Nitride ( InGaN )/Gallium Nitride (GaN) Heterostructures to Achieve Frequency

  1. Deposition of hard and adherent diamond-like carbon films inside steel tubes using a pulsed-DC discharge.

    PubMed

    Trava-Airoldi, Vladimir Jesus; Capote, Gil; Bonetti, Luís Francisco; Fernandes, Jesum; Blando, Eduardo; Hübler, Roberto; Radi, Polyana Alves; Santos, Lúcia Vieira; Corat, Evaldo José

    2009-06-01

    A new, low cost, pulsed-DC plasma-enhanced chemical vapor deposition system that uses a bipolar, pulsed power supply was designed and tested to evaluate its capacity to produce quality diamond-like carbon films on the inner surface of steel tubes. The main focus of the study was to attain films with low friction coefficients, low total stress, a high degree of hardness, and very good adherence to the inner surface of long metallic tubes at a reasonable growth rate. In order to enhance the diamond-like carbon coating adhesion to metallic surfaces, four steps were used: (1) argon ion sputtering; (2) plasma nitriding; (3) a thin amorphous silicon interlayer deposition, using silane as the precursor gas; and (4) diamond-like carbon film deposition using methane atmosphere. This paper presents various test results as functions of the methane gas pressure and of the coaxial metal anode diameter, where the pulsed-DC voltage constant is kept constant. The influence of the coaxial metal anode diameter and of the methane gas pressure is also demonstrated. The results obtained showed the possibilities of using these DLC coatings for reduced friction and to harden inner surface of the steel tubes.

  2. Bulk Cubic Gallium Nitride

    DTIC Science & Technology

    1999-02-09

    microcrysta. form at bottom of «he reaction vessel. The objective of the second step is the solvothermal transport of the gallium nitride residing in the...system using pressure pumps can be used to gain precise control of the pressure. High pressure is typically used for the solvothermal transport. The...takes place in the reaction vessel during heating is a solvothermal reaction that is conducted at or above the critical point of the solvent The

  3. Superplastic forging nitride ceramics

    DOEpatents

    Panda, Prakash C.; Seydel, Edgar R.; Raj, Rishi

    1988-03-22

    The invention relates to producing relatively flaw free silicon nitride ceramic shapes requiring little or no machining by superplastic forging This invention herein was made in part under Department of Energy Grant DE-AC01-84ER80167, creating certain rights in the United States Government. The invention was also made in part under New York State Science and Technology Grant SB1R 1985-10.

  4. Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

    SciTech Connect

    Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.

    2014-11-01

    We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

  5. Tribological and microstructural characteristics of ion-nitrided steels

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1983-01-01

    Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 304 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided.

  6. Gallium nitride electronics

    NASA Astrophysics Data System (ADS)

    Rajan, Siddharth; Jena, Debdeep

    2013-07-01

    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it

  7. Efficient dc-to-dc converter

    NASA Technical Reports Server (NTRS)

    Black, J. M.

    1978-01-01

    Circuit consists of chopper section which converts input dc to square wave, followed by bridge-rectifier stage. Chopper gives nearly-ideal switching characteristics, and bridge uses series of full-wave stages rather than less-efficient half-wave rectifiers found in previous circuits. Special features of full-wave circuit allow redundant components to be eliminated, lowering parts count. Circuit can also be adapted for use as dc-to-dc converter or as combination dc-and-ac source.

  8. DC/DC Converter Stability Testing Study

    NASA Technical Reports Server (NTRS)

    Wang, Bright L.

    2008-01-01

    This report presents study results on hybrid DC/DC converter stability testing methods. An input impedance measurement method and a gain/phase margin measurement method were evaluated to be effective to determine front-end oscillation and feedback loop oscillation. In particular, certain channel power levels of converter input noises have been found to have high degree correlation with the gain/phase margins. It becomes a potential new method to evaluate stability levels of all type of DC/DC converters by utilizing the spectral analysis on converter input noises.

  9. Group-III Nitride Field Emitters

    NASA Technical Reports Server (NTRS)

    Bensaoula, Abdelhak; Berishev, Igor

    2008-01-01

    Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude

  10. Single gallium nitride nanowire lasers.

    PubMed

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

  11. Electrochemical nitridation of metal surfaces

    DOEpatents

    Wang, Heli; Turner, John A.

    2015-06-30

    Electrochemical nitridation of metals and the produced metals are disclosed. An exemplary method of electrochemical nitridation of metals comprises providing an electrochemical solution at low temperature. The method also comprises providing a three-electrode potentiostat system. The method also comprises stabilizing the three-electrode potentiostat system at open circuit potential. The method also comprises applying a cathodic potential to a metal.

  12. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    NASA Astrophysics Data System (ADS)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  13. Microplasma Processed Ultrathin Boron Nitride Nanosheets for Polymer Nanocomposites with Enhanced Thermal Transport Performance.

    PubMed

    Zhang, Ri-Chao; Sun, Dan; Lu, Ai; Askari, Sadegh; Macias-Montero, Manuel; Joseph, Paul; Dixon, Dorian; Ostrikov, Kostya; Maguire, Paul; Mariotti, Davide

    2016-06-01

    This Research Article reports on the enhancement of the thermal transport properties of nanocomposite materials containing hexagonal boron nitride in poly(vinyl alcohol) through room-temperature atmospheric pressure direct-current microplasma processing. Results show that the microplasma treatment leads to exfoliation of the hexagonal boron nitride in isopropyl alcohol, reducing the number of stacks from >30 to a few or single layers. The thermal diffusivity of the resulting nanocomposites reaches 8.5 mm(2) s(-1), 50 times greater than blank poly(vinyl alcohol) and twice that of nanocomposites containing nonplasma treated boron nitride nanosheets. From TEM analysis, we observe much less aggregation of the nanosheets after plasma processing along with indications of an amorphous carbon interfacial layer, which may contribute to stable dispersion of boron nitride nanosheets in the resulting plasma treated colloids.

  14. Hafnium nitride buffer layers for growth of GaN on silicon

    DOEpatents

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  15. Proceedings of the Conference on the Numerical Simulation of Plasmas (4th) Held at the Naval Research Laboratory, Washington, D.C. on 2, 3 November 1970

    DTIC Science & Technology

    1971-07-19

    computers than the latter and considerably shortens the lead time to results. In other words it is often better to use brute force subtly in computational...code ’ . Every effort has been made to make the code efficient and accurate. With the FFT subroutine in assembly language and the tridiagonal...being coded 52 L m .^^— — „,—....., Relatives tic Plasma Simulation in PL360, a symbolic assembly language for 360 computers, and is being

  16. Synthesis and characterization of actinide nitrides

    SciTech Connect

    Jaques, Brian; Butt, Darryl P.; Marx, Brian M.; Hamdy, A.S.; Osterberg, Daniel; Balfour, Gordon

    2007-07-01

    A carbothermic reduction of the metal oxides in a hydrogen/nitrogen mixed gas stream prior to nitriding in a nitrogen gas stream was used to synthesize uranium nitride at 1500 deg. C, cerium nitride at 1400 deg. C, and dysprosium nitride at 1500 deg. C. Cerium nitride and dysprosium nitride were also synthesized via hydriding and nitriding the metal shavings at 900 deg. C and 1500 deg. C, respectively. Also, a novel ball-milling synthesis route was used to produce cerium nitride and dysprosium nitride from the metal shavings at room temperature. Dysprosium nitride was also produced by reacting the metal shavings in a high purity nitrogen gas stream at 1300 deg. C. All materials were characterized by phase analysis via X-ray diffraction. Only the high purity materials were further analyzed via chemical analysis to characterize the trace oxygen concentration. (authors)

  17. Aluminum nitride grating couplers.

    PubMed

    Ghosh, Siddhartha; Doerr, Christopher R; Piazza, Gianluca

    2012-06-10

    Grating couplers in sputtered aluminum nitride, a piezoelectric material with low loss in the C band, are demonstrated. Gratings and a waveguide micromachined on a silicon wafer with 600 nm minimum feature size were defined in a single lithography step without partial etching. Silicon dioxide (SiO(2)) was used for cladding layers. Peak coupling efficiency of -6.6 dB and a 1 dB bandwidth of 60 nm have been measured. This demonstration of wire waveguides and wideband grating couplers in a material that also has piezoelectric and elasto-optic properties will enable new functions for integrated photonics and optomechanics.

  18. Gallium nitride nanotube lasers

    DOE PAGES

    Li, Changyi; Liu, Sheng; Hurtado, Antonio; ...

    2015-01-01

    Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

  19. Silicon Nitride for Direct Water-Splitting and Corrosion Mitigation

    SciTech Connect

    Head, J.; Turner, J.A.

    2006-01-01

    Todays fossil fuels are becoming harder to obtain, creating pollution problems, and posing hazards to people’s health. One alternative to fossil fuels is hydrogen, capable of serving as a clean and efficient energy carrier. Certain semiconductors are able to harness the energy of photons and direct it into water electrolysis in a process known as photoelectrochemical water splitting. Triple junction devices integrate three semiconductors of different band gaps resulting in a monolithic material that absorbs over a broader spectrum. Amorphous silicon (a-Si) is one such material that, when stacked in tandem, possesses water-splitting capabilities. Even though a-Si is capable of splitting water, it is an unstable material in solution and therefore requires a coating to protect the surface from corrosion. A stable, transparent material that has the potential for corrosion protection is silicon nitride. In this study, silicon nitride thin films were grown using DC magnetron sputtering with varying amounts of argon and nitrogen added to the system. X-ray diffraction indicated amorphous silicon nitride films. Current as a function of potential was determined from cyclic voltammetry measurements. Mott-Schottky analysis showed n-type behavior with absorption and transmission measurements indicated variation in flatband potentials. Variation in band gap values ranging from 1.90 to 4.0 eV. Corrosion measurements reveal that the silicon nitride samples exhibit both p-type and n-type behavior. Photocurrent over a range of potentials was greater in samples that were submerged in acidic electrolyte. Silicon nitride shows good stability in acidic, neutral, and basic solutions, indicative of a good material for corrosion mitigation.

  20. Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

    PubMed Central

    Ottaviani, Ivano; Cirillo, Matteo; De Matteis, Fabio; Francini, Roberto; Merlo, Vittorio; Davoli, Ivan

    2017-01-01

    We studied the growth and oxidation of niobium nitride (NbN) films that we used to fabricate superconductive tunnel junctions. The thin films were deposited by dc reactive magnetron sputtering using a mixture of argon and nitrogen. The process parameters were optimized by monitoring the plasma with an optical spectroscopy technique. This technique allowed us to obtain NbN as well as good quality AlN films and both were used to obtain NbN/AlN/NbN trilayers. Lift-off lithography and selective anodization of the NbN films were used, respectively, to define the main trilayer geometry and/or to separate electrically, different areas of the trilayers. The anodized films were characterized by using Auger spectroscopy to analyze compounds formed on the surface and by means of a nano-indenter in order to investigate its mechanical and adhesion properties. The transport properties of NbN/AlN/NbN Josephson junctions obtained as a result of the above described fabrication process were measured in liquid helium at 4.2 K. PMID:28382243

  1. DC source assemblies

    DOEpatents

    Campbell, Jeremy B; Newson, Steve

    2013-02-26

    Embodiments of DC source assemblies of power inverter systems of the type suitable for deployment in a vehicle having an electrically grounded chassis are provided. An embodiment of a DC source assembly comprises a housing, a DC source disposed within the housing, a first terminal, and a second terminal. The DC source also comprises a first capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the first terminal. The DC source assembly further comprises a second capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the second terminal.

  2. Hard carbon nitride and method for preparing same

    DOEpatents

    Haller, Eugene E.; Cohen, Marvin L.; Hansen, William L.

    1992-01-01

    Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

  3. Preparation and study of Titanium Nitride films by reactive sputtering and an investigation of target poisoning during the process

    NASA Astrophysics Data System (ADS)

    Aziz, Tareque; Rumaiz, Abdul

    Titanium Nitride (TiNx) thin films were prepared by reactive dc sputtering in presence of Ar-N2 plasma. The thin films were grown on Quartz and pure Si surfaces. The Ar-N2 content ratio was gradually varied while the substrate and the Titanium target were kept at room temperature. Structural properties, optical and electrical properties of the thin films were studied by using X-ray Photoelectron Spectroscopy (XPS) and XRD and 4 probe resistivity measurement. Target poisoning of the Ti target was also studied by varying reactive gas concentration and measuring the target current. A study of target current vs growth rate of the films was performed to investigate the onset of ``poison'' mode.Although there was an insignificant drop in plasma current, we noticed a drop in the deposition rate. This result was tested against Monte Carlo simulations using SRIM simulations. Effects of annealing on the crystallinity and the sheet resistance will also be discussed. The work has been supported by BSA,DOE.

  4. Tunable electrical and optical properties of hafnium nitride thin films

    NASA Astrophysics Data System (ADS)

    Farrell, I. L.; Reeves, R. J.; Preston, A. R. H.; Ludbrook, B. M.; Downes, J. E.; Ruck, B. J.; Durbin, S. M.

    2010-02-01

    We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.

  5. Synthesis of ternary metal nitride nanoparticles using mesoporous carbon nitride as reactive template.

    PubMed

    Fischer, Anna; Müller, Jens Oliver; Antonietti, Markus; Thomas, Arne

    2008-12-23

    Mesoporous graphitic carbon nitride was used as both a nanoreactor and a reactant for the synthesis of ternary metal nitride nanoparticles. By infiltration of a mixture of two metal precursors into mesoporous carbon nitride, the pores act first as a nanoconfinement, generating amorphous mixed oxide nanoparticles. During heating and decomposition, the carbon nitride second acts as reactant or, more precisely, as a nitrogen source, which converts the preformed mixed oxide nanoparticles into the corresponding nitride (reactive templating). Using this approach, ternary metal nitride particles with diameters smaller 10 nm composed of aluminum gallium nitride (Al-Ga-N) and titanium vanadium nitride (Ti-V-N) were synthesized. Due to the confinement effect of the carbon nitride matrix, the composition of the resulting metal nitride can be easily adjusted by changing the concentration of the preceding precursor solution. Thus, ternary metal nitride nanoparticles with continuously adjustable metal composition can be produced.

  6. Method for producing refractory nitrides

    DOEpatents

    Quinby, Thomas C.

    1989-01-24

    A process for making fine, uniform metal nitride powders that can be hot pressed or sintered. A metal salt is placed in a solvent with Melamine and warmed until a metal-Melamine compound forms. The solution is cooled and the metal-Melamine precipitate is calcined at a temperature below 700.degree. C. to form the metal nitrides and to avoid formation of the metal oxide.

  7. Boron nitride converted carbon fiber

    SciTech Connect

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  8. Nano boron nitride flatland.

    PubMed

    Pakdel, Amir; Bando, Yoshio; Golberg, Dmitri

    2014-02-07

    Recent years have witnessed many breakthroughs in research on two-dimensional (2D) nanomaterials, among which is hexagonal boron nitride (h-BN), a layered material with a regular network of BN hexagons. This review provides an insight into the marvellous nano BN flatland, beginning with a concise introduction to BN and its low-dimensional nanostructures, followed by an overview of the past and current state of research on 2D BN nanostructures. A comprehensive review of the structural characteristics and synthetic routes of BN monolayers, multilayers, nanomeshes, nanowaves, nanoflakes, nanosheets and nanoribbons is presented. In addition, electronic, optical, thermal, mechanical, magnetic, piezoelectric, catalytic, ecological, biological and wetting properties, applications and research perspectives for these novel 2D nanomaterials are discussed.

  9. Hemocompatibility of titanium nitride.

    PubMed

    Dion, I; Baquey, C; Candelon, B; Monties, J R

    1992-10-01

    The left ventricular assist device is based on the principle of the Maillard-Wenkel rotative pump. The materials which make up the pump must present particular mechanical, tribological, thermal and chemical properties. Titanium nitride (TiN) because of its surface properties and graphite because of its bulk characteristics have been chosen. The present study evaluated the in vitro hemocompatibility of TiN coating deposited by the chemical vapor deposition process. Protein adsorption, platelet retention and hemolysis tests have been carried out. In spite of some disparities, the TiN behavior towards albumin and fibrinogen is interesting, compared with the one of a reference medical grade elastomer. The platelet retention test gives similar results as those achieved with the same elastomer. The hemolysis percentage is near to zero. TiN shows interesting characteristics, as far as mechanical and tribological problems are concerned, and presents very encouraging blood tolerability properties.

  10. Superplastic forging nitride ceramics

    DOEpatents

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  11. An Electrothermal Plasma Source Developed for Simulation of Transient Heat Loads in Future Large Fusion Devices

    NASA Astrophysics Data System (ADS)

    Gebhart, Trey; Baylor, Larry; Winfrey, Leigh

    2016-10-01

    The realization of fusion energy requires materials that can withstand high heat and particle fluxes at the plasma material interface. In this work, an electrothermal (ET) plasma source has been designed as a possible transient heat flux source for a linear plasma material interaction device. An ET plasma source operates in the ablative arc regime, which is driven by a DC capacitive discharge. The current travels through the 4mm bore of a boron nitride liner and subsequently ablates and ionizes the liner material. This results in a high density plasma with a large unidirectional bulk flow out of the source exit. The pulse length for the ET source has been optimized using a pulse forming network to have a duration of 1ms at full-width half maximum. The peak currents and maximum source energies seen in this system are 2kA and 5kJ. The goal of this work is to show that the ET source produces electron densities and heat fluxes that are comparable to transient events in future large magnetic confinement fusion devices. Heat flux, plasma temperature, and plasma density were determined for each test shot using infrared imaging and optical spectroscopy techniques. This work will compare the ET source output (heat flux, temperature, and density) with and without an applied magnetic field. Research sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U. S. Department of Energy.

  12. 76 FR 13926 - Airworthiness Directives; The Boeing Company Model DC-8-11, DC-8-12, DC-8-21, DC-8-31, DC-8-32...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-15

    ... Model DC-8-11, DC-8- 12, DC-8-21, DC-8-31, DC-8-32, DC-8-33, DC-8-41, DC-8-42, and DC-8-43 Airplanes; DC-8-50 Series Airplanes; DC-8F-54 and DC-8F-55 Airplanes; DC-8-60 Series Airplanes; DC-8-60F Series Airplanes; DC-8-70 Series Airplanes; and DC-8-70F Series Airplanes AGENCY:......

  13. Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Shakya, J.; Kim, K. H.; Lin, J. Y.; Jiang, H. X.

    2004-07-01

    III-nitride photonic crystal (PC) ultraviolet (UV) light-emitting diodes (LEDs) were fabricated. Triangular arrays of the PCs with different diameters/periodicities were patterned using electron-beam lithography and inductively coupled plasma dry etching. The optical power output of LEDs was enhanced by a factor of 2.5 due to PC formation. It was observed that the optical enhancement factor depends strongly on the lattice constant and hole size of the PCs. The achievement of nitride PCs is expected to benefit many applications of III-nitride optoelectronics, particularly for the improvement of extraction efficiency in III-nitride deep-UV emitters (λ <340nm), which are crucial for many important applications, but presently have a very low quantum efficiency.

  14. 75 FR 61989 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-8-31, DC-8-32, DC-8-33, DC-8-41...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-07

    ... Corporation Model DC- 8-31, DC-8-32, DC-8-33, DC-8-41, DC-8-42, and DC-8-43 Airplanes; Model DC-8-50 Series Airplanes; Model DC-8F-54 and DC-8F-55 Airplanes; Model DC-8-60 Series Airplanes; Model DC-8-60F Series Airplanes; Model DC-8- 70 Series Airplanes; and Model DC-8-70F Series Airplanes AGENCY:......

  15. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

    SciTech Connect

    Shams, Q.A.

    1988-01-01

    Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing.

  16. Growth, characterization, and properties of carbon nitride with and without silicon addition

    SciTech Connect

    Chen, L.C.; Wu, C.T.; Wu, J.J.; Chen, K.H.

    2000-01-30

    Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.

  17. Surface enhanced Raman study of cubic boron nitride

    NASA Astrophysics Data System (ADS)

    Zhang, Xu

    2003-05-01

    Surface enhancement for Raman scattering of single crystal cubic boron nitride (c-BN) (1 1 1) and polycrystalline cubic BN was observed by depositing silver nanoparticles on the substrate surface. The c-BN samples were subjected to hydrogen plasma, as well as deuterium plasma treatment to observe the isotopic shift of surface binding species. Characteristic Raman peaks corresponding to the molecular vibrational modes of surface chemisorbed hydrogen and deuterium could be observed for the first time and were assigned according to ab initio molecular orbital calculations.

  18. Nitride precipitation in salt-bath nitrided interstitial-free steel

    SciTech Connect

    Lee, Tae-Ho; Oh, Chang-Seok; Lee, Min-Ku; Han, Sang-Won

    2010-10-15

    Nitride precipitation and its effect on microstrain in salt-bath nitrided interstitial-free steel were investigated using transmission electron microscopy and neutron diffraction. As the cooling rate after nitriding decreased, two nitrides, {gamma}'-Fe{sub 4}N and {alpha}{sup -}Fe{sub 16}N{sub 2}, were identified in diffusion zone. Combined analyses using Rietveld whole-profile fitting and size-strain analysis revealed that the microstrain in the nitrided specimen increased due to nitrogen supersaturation and then decreased after nitride precipitation, whereas the effective particle size continuously decreased. It was found that microstrain is the dominant factor in peak broadening of the nitrided specimen.

  19. Cathodoluminescence spectra of gallium nitride nanorods

    PubMed Central

    2011-01-01

    Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperature were investigated. The CL spectra along the length of the individual GaN nanorod were also studied. The results reveal that the 3.2-eV peak comes from the structural defect at the interface between the GaN nanorod and Si substrate. The surface state emission of the single GaN nanorod is stronger as the diameter of the GaN nanorod becomes smaller due to an increased surface-to-volume ratio. PMID:22168896

  20. Cathodoluminescence spectra of gallium nitride nanorods.

    PubMed

    Tsai, Chia-Chang; Li, Guan-Hua; Lin, Yuan-Ting; Chang, Ching-Wen; Wadekar, Paritosh; Chen, Quark Yung-Sung; Rigutti, Lorenzo; Tchernycheva, Maria; Julien, François Henri; Tu, Li-Wei

    2011-12-14

    Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperature were investigated. The CL spectra along the length of the individual GaN nanorod were also studied. The results reveal that the 3.2-eV peak comes from the structural defect at the interface between the GaN nanorod and Si substrate. The surface state emission of the single GaN nanorod is stronger as the diameter of the GaN nanorod becomes smaller due to an increased surface-to-volume ratio.

  1. DC-to-DC switching converter

    NASA Technical Reports Server (NTRS)

    Cuk, Slobodan M. (Inventor); Middlebrook, Robert D. (Inventor)

    1980-01-01

    A dc-to-dc converter having nonpulsating input and output current uses two inductances, one in series with the input source, the other in series with the output load. An electrical energy transferring device with storage, namely storage capacitance, is used with suitable switching means between the inductances to DC level conversion. For isolation between the source and load, the capacitance may be divided into two capacitors coupled by a transformer, and for reducing ripple, the inductances may be coupled. With proper design of the coupling between the inductances, the current ripple can be reduced to zero at either the input or the output, or the reduction achievable in that way may be divided between the input and output.

  2. Titanium-nitride-oxide-coated coronary stents: insights from the available evidence.

    PubMed

    Karjalainen, Pasi P; Nammas, Wail

    2016-11-12

    Coating of stent surface with a biocompatible material is suggested to improve stent safety profile. A proprietary process was developed to coat titanium-nitride-oxide on the stent surface, based on plasma technology that uses the nano-synthesis of gas and metal. Preclinical in vitro and in vivo investigation confirmed blood compatibility of titanium (nitride-) oxide films. Titanium-nitride-oxide-coated stents demonstrated a better angiographic outcome, compared with bare-metal stents at mid-term follow-up; however, they failed to achieve non-inferiority for angiographic outcome versus second-generation drug-eluting stents. Observational studies showed adequate clinical outcome at mid-term follow-up. Non-randomized studies showed an outcome of titanium-nitride-oxide-coated stents comparable to - or better than - first-generation drug-eluting stents at long-term follow-up. Two randomized controlled trials demonstrated comparable efficacy outcome, and a better safety outcome of titanium-nitride-oxide-coated stents versus drug-eluting stents at long-term follow-up. Evaluation by optical coherence tomography at mid-term follow-up revealed better neointimal strut coverage associated with titanium-nitride-oxide-coated stents versus drug-eluting stents; yet, neointimal hyperplasia thickness was greater. Key messages Stents coated with titanium-nitride-oxide demonstrated biocompatibility in preclinical studies: they inhibit platelet and fibrin deposition, and reduce neointimal growth. In observational and non-randomized studies, titanium-nitride-oxide-coated stents were associated with adequate safety and efficacy outcome. In randomized trials of patients with acute coronary syndrome, titanium-nitride-oxide-coated stents were associated with a better safety outcome, compared with drug-eluting stents; efficacy outcome was comparable.

  3. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, J.

    1984-01-01

    The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

  4. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, J.

    1985-01-01

    The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

  5. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  6. Process for making transition metal nitride whiskers

    DOEpatents

    Bamberger, C.E.

    1988-04-12

    A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites. 1 fig., 1 tab.

  7. Process for making transition metal nitride whiskers

    DOEpatents

    Bamberger, Carlos E.

    1989-01-01

    A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites.

  8. Pulsed dc self-sustained magnetron sputtering

    SciTech Connect

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-09-15

    The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of {approx}0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of {approx}560 W/cm{sup 2}. The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range

  9. Quasi-DC electrical discharge characterization in a supersonic flow

    NASA Astrophysics Data System (ADS)

    Houpt, Alec; Hedlund, Brock; Leonov, Sergey; Ombrello, Timothy; Carter, Campbell

    2017-04-01

    A Quasi-DC (Q-DC) electrical discharge generates a highly transient filamentary plasma in high-speed airflow. Major specific properties of this type of discharge are realized due to a strong coupling of the plasma to the moving gas. The plasma, supplied by a DC voltage waveform, demonstrates a pulsed-periodic pattern of dynamics significantly affecting the flow structure. In this study, the dynamics and plasma parameters of the Q-DC discharge are analyzed in the Supersonic Test Rig (SBR-50) at the University of Notre Dame at Mach number M = 2, stagnation pressure P 0 = (0.9-2.6) × 105 Pa, stagnation temperature T 0 = 300 K, unit Reynolds number ReL = 7-25 × 106 m-1, and plasma power W pl = 3-21 kW. The plasma parameters are measured with current-voltage probes and optical emission spectroscopy. An unsteady pattern of interaction is depicted by high-speed image capturing. The result of the plasma-flow interaction is characterized by means of pressure measurements and schlieren visualization. It is considered that the Q-DC discharge may be employed for active control of duct-driven flows, cavity-based flow, and for effective control of shock wave-boundary layer interaction.

  10. Experimental observation of further frequency upshift from dc to ac radiation converter with perpendicular dc magnetic field

    PubMed

    Higashiguchi; Yugami; Gao; Niiyama; Sasaki; Takahashi; Ito; Nishida

    2000-11-20

    A frequency upshift of a short microwave pulse is generated by the interaction between a relativistic underdense ionization front and a periodic electrostatic field with a perpendicular dc magnetic field. When the dc magnetic field is applied, further frequency upshift of 3 GHz is observed with respect to an unmagnetized case which has typically a GHz range. The radiation frequency depends on both the plasma density and the strength of the dc magnetic field, i.e., the plasma frequency and the cyclotron frequency. The frequency of the emitted radiation is in reasonable agreement with the theoretical values.

  11. First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES

    NASA Astrophysics Data System (ADS)

    Petit, M.; Ould-Metidji, Y.; Robert, Ch.; Bideux, L.; Gruzza, B.; Matolin, V.

    2003-05-01

    The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel devices to grow high-quality nitride single crystals. In this paper, we report the first stages of the InP(1 0 0) surfaces nitridation in order to grow high-quality nitride films. Indeed, the nitridation process is an important step in the growth of nitrides [J. Vac. Sci. Technol. A 17 (1999) 2194; Phys. Status Solidi A 176 (1999) 595]. Previous works [Synth. Met. 90 (1997) 2233; Appl. Phys. Lett. 63 (1993) 1957] have shown that in situ Ar + ions bombardment is useful on the one hand to clean the surface, and on the other hand to create droplets of metallic indium in well-controlled quantity. Then the indium metallic enrichment of the surface, monitoring by elastic peak electron spectroscopy (EPES) and Auger electron spectroscopy (AES) allows to prepare the III-V semiconductors surfaces to the nitridation step. The nitridated process has been performed with a high voltage plasma discharge cell and has been studied using quantitative Auger electron spectroscopy, elastic peak electron spectroscopy and electron energy loss spectroscopy (EELS), in order to optimize the conditions of InN layers formation.

  12. Multilevel DC link inverter

    DOEpatents

    Su, Gui-Jia

    2003-06-10

    A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

  13. Method and device to synthesize boron nitride nanotubes and related nanoparticles

    DOEpatents

    Zettl, Alexander K.

    2016-07-19

    Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.

  14. Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

    NASA Astrophysics Data System (ADS)

    Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi

    2012-08-01

    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.

  15. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  16. Graphene on hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Yankowitz, Matthew; Xue, Jiamin; LeRoy, B. J.

    2014-07-01

    The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.

  17. Initial oxidation behaviors of nitride surfaces of uranium by XPS analysis

    NASA Astrophysics Data System (ADS)

    Liu, Kezhao; Luo, Lizu; Luo, Lili; Long, Zhong; Hong, Zhanglian; Yang, Hui; Wu, Sheng

    2013-09-01

    The nitride surfaces of uranium were prepared by the surface glow plasma nitriding (SGPN) and plasma immersion ion implantation (PIII) methods. The initial oxidation behaviors of modified surfaces were studied by X-ray photoelectron spectroscopy (XPS). The SGPN on the uranium surface led to a single layer of uranium sesquinitride (U2N3), while the PIII on the surface resulted in a compound layer composed of U2N3 and uranium dioxide (UO2). The oxygen covered on these modified layers led to the formation of UO2 from U2N3 and U2N3 from UN. The oxidized nitrogen species were also observed on the two types of nitriding layers, with the discussion of the N-O coaction behaviors.

  18. Laser nitriding of iron: Nitrogen profiles and phases

    NASA Astrophysics Data System (ADS)

    Illgner, C.; Schaaf, P.; Lieb, K. P.; Schubert, E.; Queitsch, R.; Bergmann, H.-W.

    1995-07-01

    Armco iron samples were surface nitrided by irradiating them with pulses of an excimer laser in a nitrogen atmosphere. The resulting nitrogen depth profiles measured by Resonant Nuclear Reaction Analysis (RNRA) and the phase formation determined by Conversion Electron Mössbauer Spectroscopy (CEMS) were investigated as functions of energy density and the number of pulses. The nitrogen content of the samples was found to be independent of the number of pulses in a layer of 50 nm from the surface and to increase in depths exceeding 150 nm. The phase composition did not change with the number of pulses. The nitrogen content can be related to an enhanced nitrogen solubility based on high temperatures and high pressures due to the laser-induced plasma above the sample. With increasing pulse energy density, the phase composition changes towards phases with higher nitrogen contents. Nitrogen diffusion seems to be the limiting factor for the nitriding process.

  19. Amorphous carbon buffer layers for separating free gallium nitride films

    NASA Astrophysics Data System (ADS)

    Altakhov, A. S.; Gorbunov, R. I.; Kasharina, L. A.; Latyshev, F. E.; Tarala, V. A.; Shreter, Yu. G.

    2016-11-01

    The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrates with a (0001) crystallographic orientation. The samples have been studied by the methods of Raman scattering and X-ray diffraction analysis. It is shown that thin DLC films affect only slightly the processes of nucleation and growth of gallium nitride films. Notably, the strength of the "GaN film-Al2O3" substrate interface decreases, which facilitates separation of the GaN layers.

  20. Nitride tuning of lanthanide chromites.

    PubMed

    Black, Ashley P; Johnston, Hannah E; Oró-Solé, Judith; Bozzo, Bernat; Ritter, Clemens; Frontera, Carlos; Attfield, J Paul; Fuertes, Amparo

    2016-03-21

    LnCrO(3-x)N(x) perovskites with Ln = La, Pr and Nd and nitrogen contents up to x = 0.59 have been synthesised through ammonolysis of LnCrO4 precursors. These new materials represent one of the few examples of chromium oxynitrides. Hole-doping through O(2-)/N(3-) anion substitution suppresses the magnetic transition far less drastically than Ln(3+)/M(2+) (M = Ca, Sr) cation substitutions because of the greater covalency of metal-nitride bonds. Hence, nitride-doping is a more benign method for doping metal oxides without suppressing electronic transitions.

  1. Plasma-arc reactor for production possibility of powdered nano-size materials

    NASA Astrophysics Data System (ADS)

    Hadzhiyski, V.; Mihovsky, M.; Gavrilova, R.

    2011-01-01

    Nano-size materials of various chemical compositions find increasing application in life nowadays due to some of their unique properties. Plasma technologies are widely used in the production of a range of powdered nano-size materials (metals, alloys, oxides, nitrides, carbides, borides, carbonitrides, etc.), that have relatively high melting temperatures. Until recently, the so-called RF-plasma generated in induction plasma torches was most frequently applied [1-3]. The subject of this paper is the developments of a new type of plasma-arc reactor, operated with transferred arc system for production of disperse nano-size materials. The new characteristics of the PLASMALAB reactor are the method of feeding the charge, plasma arc control and anode design. The disperse charge is fed by a charge feeding system operating on gravity principle through a hollow cathode of an arc plasma torch situated along the axis of a water-cooled wall vertical tubular reactor. The powdered material is brought into the zone of a plasma space generated by the DC rotating transferred plasma arc. The arc is subjected to Auto-Electro-Magnetic Rotation (AEMR) by an inductor serially connected to the anode circuit. The anode is in the form of a water-cooled copper ring. It is mounted concentrically within the cylindrical reactor, with its lower part electrically insulated from it. The electric parameters of the arc in the reactor and the quantity of processed charge are maintained at a level permitting generation of a volumetric plasma discharge. This mode enables one to attain high mean mass temperature while the processed disperse material flows along the reactor axis through the plasma zone where the main physico-chemical processes take place. The product obtained leaves the reactor through the annular anode, from where it enters a cooling chamber for fixing the produced nano-structure. Experiments for AlN synthesis from aluminium power and nitrogen were carried out using the plasma reactor

  2. Homogeneous dispersion of gallium nitride nanoparticles in a boron nitride matrix by nitridation with urea.

    PubMed

    Kusunose, Takafumi; Sekino, Tohru; Ando, Yoichi

    2010-07-01

    A Gallium Nitride (GaN) dispersed boron nitride (BN) nanocomposite powder was synthesized by heating a mixture of gallium nitrate, boric acid, and urea in a hydrogen atmosphere. Before heat treatment, crystalline phases of urea, boric acid, and gallium nitrate were recognized, but an amorphous material was produced by heat treatment at 400 degrees C, and then was transformed into GaN and turbostratic BN (t-BN) by further heat treatment at 800 degrees C. TEM obsevations of this composite powder revealed that single nanosized GaN particles were homogeneously dispersed in a BN matrix. Homogeneous dispersion of GaN nanoparticles was thought to be attained by simultaneously nitriding gallium nitrate and boric acid to GaN and BN with urea.

  3. Radiation-Tolerant DC-DC Converters

    NASA Technical Reports Server (NTRS)

    Skutt, Glenn; Sable, Dan; Leslie, Leonard; Graham, Shawn

    2012-01-01

    A document discusses power converters suitable for space use that meet the DSCC MIL-PRF-38534 Appendix G radiation hardness level P classification. A method for qualifying commercially produced electronic parts for DC-DC converters per the Defense Supply Center Columbus (DSCC) radiation hardened assurance requirements was developed. Development and compliance testing of standard hybrid converters suitable for space use were completed for missions with total dose radiation requirements of up to 30 kRad. This innovation provides the same overall performance as standard hybrid converters, but includes assurance of radiation- tolerant design through components and design compliance testing. This availability of design-certified radiation-tolerant converters can significantly reduce total cost and delivery time for power converters for space applications that fit the appropriate DSCC classification (30 kRad).

  4. 75 FR 6160 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-15, DC...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-08

    ... Douglas Corporation Model DC- 10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10... airworthiness directive (AD) for certain Model DC-10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC- 10A and... would require a one-time installation of electrical bonding jumpers for the fill valve controllers...

  5. Forback DC-to-DC converter

    NASA Technical Reports Server (NTRS)

    Lukemire, Alan T. (Inventor)

    1993-01-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  6. Forback DC-to-DC converter

    NASA Technical Reports Server (NTRS)

    Lukemire, Alan T. (Inventor)

    1995-01-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  7. PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices

    NASA Astrophysics Data System (ADS)

    Bagolini, Alvise; Savoia, Alessandro Stuart; Picciotto, Antonino; Boscardin, Maurizio; Bellutti, Pierluigi; Lamberti, Nicola; Caliano, Giosuè

    2015-01-01

    Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R & D to production. A tradeoff between deposition rate, residual stress and electrical properties is showed. The first option consists in a double layer of silicon nitride with a relatively high deposition rate of ~100 nm min-1 and low compressive residual stress, which is suitable for the fabrication of the thick nitride layer used as a mechanical support of the CMUTs. The second option involves the use of a mixed frequency low-stress silicon nitride with outstanding electrical insulation capability, providing improved mechanical and electrical integrity of the CMUT active layers. The behavior of the nitride is analyzed as a function of deposition parameters and subsequent annealing. The nitride layer characterization is reported in terms of interfaces density influence on residual stress, refractive index, deposition rate, and thickness variation both as deposited and after thermal treatment. A sweet spot for stress stability is identified at an interfaces density of 0.1 nm-1, yielding 87 MPa residual stress after annealing. A complete CMUT device fabrication is reported using the optimized nitrides. The CMUT performance is tested, demonstrating full functionality in ultrasound imaging applications and an overall performance improvement with respect to previous devices fabricated with non-optimized silicon nitride.

  8. Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

    DOEpatents

    Maya, L.

    1994-06-14

    Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film. 11 figs.

  9. Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

    DOEpatents

    Maya, Leon

    1994-01-01

    Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.

  10. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  11. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  12. Structure of boron nitride nanotubes

    SciTech Connect

    Buranova, Yu. S. Kulnitskiy, B. A.; Perezhogin, I. A.; Blank, V. D.

    2015-01-15

    The crystallographic structure of boron nitride nanotubes has been investigated. Various defects that may arise during nanotube synthesis are revealed by electron microscopy. Nanotubes with different numbers of walls and different diameters are modeled by molecular dynamics methods. Structural features of single-wall nanotubes are demonstrated. The causes of certain defects in multiwall nanotubes are indicated.

  13. The Hardest Superconducting Metal Nitride

    DOE PAGES

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; ...

    2015-09-03

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form withmore » crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.« less

  14. The Hardest Superconducting Metal Nitride

    SciTech Connect

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-09-03

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.

  15. The Hardest Superconducting Metal Nitride

    PubMed Central

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-01-01

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements. PMID:26333418

  16. The Hardest Superconducting Metal Nitride.

    PubMed

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L; He, Duanwei; Zhao, Yusheng

    2015-09-03

    Transition-metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock-salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10-20 GPa. Here, we report high-pressure synthesis of hexagonal δ-MoN and cubic γ-MoN through an ion-exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 - 80 μm. Based on indentation testing on single crystals, hexagonal δ-MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ-MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo-N network than that in cubic phase. The measured superconducting transition temperatures for δ-MoN and cubic γ-MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.

  17. Structure of boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Buranova, Yu. S.; Kulnitskiy, B. A.; Perezhogin, I. A.; Blank, V. D.

    2015-01-01

    The crystallographic structure of boron nitride nanotubes has been investigated. Various defects that may arise during nanotube synthesis are revealed by electron microscopy. Nanotubes with different numbers of walls and different diameters are modeled by molecular dynamics methods. Structural features of single-wall nanotubes are demonstrated. The causes of certain defects in multiwall nanotubes are indicated.

  18. Fully CMOS-compatible titanium nitride nanoantennas

    SciTech Connect

    Briggs, Justin A.; Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A.; Petach, Trevor A.; Goldhaber-Gordon, David

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  19. Low-frequency noise in gallium nitride nanowire mechanical resonators

    NASA Astrophysics Data System (ADS)

    Gray, Jason M.; Bertness, Kris A.; Sanford, Norman A.; Rogers, Charles T.

    2012-12-01

    We report on the low-frequency 1/f (flicker) parameter noise displayed by the resonance frequency of doubly clamped c-axis gallium nitride nanowire (NW) mechanical resonators. The resonators are electrostatically driven and their mechanical response is electronically detected via NW piezoresistance. With an applied dc voltage bias, a NW driven near its mechanical resonance generates a dc and Lorentzian rf current that both display 1/f noise. The rf current noise is proportional to the square of the derivative of the Lorentzian lineshape with a magnitude highly dependent on NW dc bias voltage conditions, consistent with a model wherein noise in the NW's electrical impedance leads to temperature noise from local Joule heating, which in turn generates resonance frequency noise via thermal expansion and the temperature-dependent Young's modulus. An example device with a 27.8 MHz resonance frequency experiences an approximate resonance frequency shift of -1.4 Hz/nW. The resonance frequency noise increases as the square of the bias voltage, indicating specific operating conditions that optimize the signal-to-noise ratio in proposed NW sensors.

  20. Low-frequency noise in gallium nitride nanowire mechanical resonators

    NASA Astrophysics Data System (ADS)

    Gray, Jason; Bertness, Kris; Sanford, Norman; Rogers, Charles

    2012-02-01

    We report on the low-frequency 1/f (flicker) parameter noise displayed by the resonance frequency and resistance of doubly clamped c-axis gallium nitride nanowire (NW) mechanical resonators. The resonators are electrostatically driven and their mechanical response is electronically detected via NW piezoresistance. With an applied dc voltage bias, an NW driven near its mechanical resonance generates a dc and Lorentzian rf current that both display 1/f noise. The rf current noise is proportional to the square of the derivative of the Lorentzian lineshape with a magnitude highly dependent on NW dc bias voltage conditions, consistent with noise in the NW's resistance leading to temperature noise from local Joule heating, which in turn generates resonance frequency noise. An example device with a 27.8 MHz resonance frequency and 220 kφ resistance experiences an approximate resonance frequency shift of -5.8 Hz/nW. In terms of NW resistance change, this corresponds with shifts of 0.1 Hz/φ and 2.6 Hz/φ at 1 V bias and 4 V bias, respectively, with an average resistance fluctuation of 1 kφ in a 1-second bandwidth.

  1. Longitudinal Splitting of Boron Nitride Nanotubes for the Facile Synthesis of High Quality Boron Nitride Nanoribbons

    DTIC Science & Technology

    2011-05-24

    Boron Nitride Nanotubes for the Facile Synthesis of High Quality Boron Nitride Nanoribbons Kris J. Erickson,†,‡,§ Ashley...We report the synthesis of BNNRs through the potassium-intercalation-induced longitudinal splitting of boron nitride nanotubes (BNNTs). This facile...COVERED 00-00-2011 to 00-00-2011 4. TITLE AND SUBTITLE Longitudinal Splitting of Boron Nitride Nanotubes for the Facile Synthesis of High

  2. Physical properties of memory quality PECVD silicon nitride

    NASA Astrophysics Data System (ADS)

    Khaliq, M. A.; Shams, Q. A.; Brown, W. D.; Naseem, H. A.

    1988-09-01

    Memory-quality silicon nitride has been deposited using plasma-enhanced chemical vapor deposition (PECVD). Film composition was varied by controlling the nitrogen concentration of the reactant gases. The effects of the source and content of the nitriding agent on the physical properties of the film were studied using ellipsometry and ultraviolet (UV), fourier transform infrared (FTIR) and Auger electron spectroscopy. Refractive index of the films varied from 1.77 to 1.95 corresponding to Si/N ratios of 0.75 to 1.03. Ultraviolet spectroscopy yielded band edge values of 4.9 to 2.2 eV depending on the Si/N ratio. Window size, endurance and retention performance is comparable to that reported for both atmospheric- and low-pressure chemical vapor deposited films. A strong correlation between the Si-H bond concentration and the memory performance was observed. Although some excess silicon in the film is needed for memory operation in a metal-nitride-oxide-silicon (MNOS) structure, excessive amounts result in low breakdown fields, small memory windows and poor retention characteristics.

  3. Aqueous stability of Ga- and N-polar gallium nitride.

    PubMed

    Foster, Corey M; Collazo, Ramon; Sitar, Zlatko; Ivanisevic, Albena

    2013-01-08

    The stability of III-nitride semiconductors in various solutions becomes important as researchers begin to integrate them into sensing platforms. This study quantitatively compares the stability of GaN surfaces with different polarities. This type of quantification is important because it represents the first step toward designing semiconductor material interfaces compatible with solution conditions. A stability study of Ga- and N-polar GaN was conducted by immersion of the surfaces in deionized H(2)O, pH 5, pH 9, and H(2)O(2) solutions for 7 days. Inductively coupled plasma mass spectrometry of the solutions was conducted to determine the amount of gallium leached from the surface. X-ray photoelectron spectroscopy and atomic force microscopy were used to compare the treated surfaces to untreated surfaces. The results show that both gallium nitride surface types exhibit the greatest stability in acidic and neutral solutions. Gallium polar surfaces were found to exhibit superior stability to nitrogen polar surfaces in the solutions studied. Our findings highlight the need for further research on surface passivation and functionalization techniques for polar III-nitride semiconductors.

  4. Tribological properties of boron nitride synthesized by ion beam deposition

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  5. A reduction nitridation route to boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Chen, X.; Wang, X.; Liu, J.; Wang, Z.; Qian, Y.

    2005-10-01

    Multiwalled boron nitride nanotubes were synthesized through a simple reduction nitridation route, in which boron trifluoride etherate ((C2H5)2OBF3) and sodium azide (NaN3) were used as reactants in the presence of Fe-Ni powder at 600 °C for 12 h. The obtained BN nanotubes have an average outer diameter of 60 nm, an average inner diameter of 30 nm, and an average length up to 300 nm. Some nanobamboo structured BN were found coexisting with the BN nanotubes. The experimental results show that the reaction temperature and Fe-Ni powder play important roles in the formation of BN nanotubes. Finally, a possible formation mechanism is also discussed.

  6. Aluminum Nitride Nanofibers fabricated using Electrospinning and Nitridation

    NASA Astrophysics Data System (ADS)

    Barbosa, Xenia; Campo, Eva; Santiago, Jorge; Ramos, Idalia

    2012-02-01

    Aluminum Nitride (AlN) and other nitride semiconductors are important materials in the fields of optoelectronics and electronics. AlN nanofibers were synthesized using electrospinning and subsequent heating under N2 and NH3 atmospheres. The precursor solution for electrospining contains aluminium nitrate and cellulose acetate. The electrospun nanofibers were heated in N2 to eliminate the polymer and produce Al2O3, and then nitridized at a temperature of 1200 C under NH3 flow. Scanning Electron Microscopy (SEM) observations demonstrate the production of fibers with diameters ranging from a few nanometers to several micrometers. X-Ray Diffraction and UV-VIs analyses show the production of AlN nanofibers with hexagonal wurzite structure and a band gap of approximately approximately 6 eV. Current-Voltage measurements on a single AlN fiber with gold electrodes suggest the formation of a Schottky contact The fabrication method and results from the fibers characterization will be presented.

  7. Plasma chemistry for inorganic materials

    NASA Technical Reports Server (NTRS)

    Matsumoto, O.

    1980-01-01

    Practical application of plasma chemistry to the development of inorganic materials using both low temperature and warm plasmas are summarized. Topics cover: the surface nitrification and oxidation of metals; chemical vapor deposition; formation of minute oxide particles; the composition of oxides from chloride vapor; the composition of carbides and nitrides; freezing high temperature phases by plasma arc welding and plasma jet; use of plasma in the development of a substitute for petroleum; the production of silicon for use in solar cell batteries; and insulating the inner surface of nuclear fusion reactor walls.

  8. Preparation of superhydrophobic nanodiamond and cubic boron nitride films

    NASA Astrophysics Data System (ADS)

    Zhou, Y. B.; Yang, Y.; Liu, W. M.; Ye, Q.; He, B.; Zou, Y. S.; Wang, P. F.; Pan, X. J.; Zhang, W. J.; Bello, I.; Lee, S. T.

    2010-09-01

    Superhydrophobic surfaces were achieved on the hardest and the second hardest materials, diamond and cubic boron nitride (cBN) films. Various surface nanostructures of nanocrystalline diamond (ND) and cBN films were constructed by carrying out bias-assisted reactive ion etching in hydrogen/argon plasmas; and it is shown that surface nanostructuring may enhance dramatically the hydrophobicity of ND and cBN films. Together with surface fluorination, superhydrophobic ND and cBN surfaces with a contact angle greater than 150° and a sliding angle smaller than 10° were demonstrated. The origin of hydrophobicity enhancement is discussed based on the Cassie model.

  9. Synthesis, Properties, and Applications Of Boron Nitride

    NASA Technical Reports Server (NTRS)

    Pouch, John J.; Alterovitz, Samuel A.

    1993-01-01

    Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

  10. Topotactic synthesis of vanadium nitride solid foams

    SciTech Connect

    Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E. )

    1993-06-01

    Vanadium nitride has been synthesized with a surface area of 120 m[sup 2] g[sup [minus]1] by temperature programmed nitridation of a foam-like vanadium oxide (35 m[sup 2] g[sup [minus]1]), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was [l brace]200[r brace]//[l brace]001[r brace]. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies.

  11. Impact of nitridation on open volumes in HfSiO{sub x} studied using monoenergetic positron beams

    SciTech Connect

    Uedono, A.; Ikeuchi, K.; Otsuka, T.; Yamabe, K.; Eguchi, K.; Takayanagi, M.; Ohdaira, T.; Muramatsu, M.; Suzuki, R.; Hamid, A.S.; Chikyow, T.

    2006-04-24

    The effects of nitridation on open volumes in thin HfSiO{sub x} films fabricated by metal-organic chemical vapor deposition were studied using monoenergetic positron beams. It was found that positrons were annihilated from the trapped state by open volumes that exist intrinsically in amorphous HfSiO{sub x} structures. In an as-deposited film, the positrons were annihilated from two different types of open volume. After plasma nitridation, the probability of positrons trapped by larger open volumes decreased, which is attributed to nitride trapped by such regions. The mean size of the open volumes increased after annealing, suggesting expansion of the open volumes due to the incorporation of nitride into the HfSiO{sub x} matrix.

  12. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

    NASA Astrophysics Data System (ADS)

    Hsiao, Ching-Lien; Liu, Ting-Wei; Wu, Chien-Ting; Hsu, Hsu-Cheng; Hsu, Geng-Ming; Chen, Li-Chyong; Shiao, Wen-Yu; Yang, C. C.; Gällström, Andreas; Holtz, Per-Olof; Chen, Chia-Chun; Chen, Kuei-Hsien

    2008-03-01

    High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20K shows a peak at a very low energy, 0.636eV, and an absorption edge at ˜0.62eV is observed at 2K, which is the lowest bandgap reported to date among the III-nitride semiconductors.

  13. Comparison of Cavitation-Erosion Resistance of Carburized and Carburized-Plus-Nitrided 316LN Stainless Steel in Mercury

    SciTech Connect

    Pawel, Steven J

    2007-05-01

    Annealed type 316LN stainless steel in the (1) carburized and the (2) carburized plus nitrided conditions was evaluated for cavitation-erosion resistance in ambient temperature mercury using a vibratory horn method. The results indicated that, relative to the specimens receiving only the carburizing treatment, the specimens that received both surface treatments exhibited substantially greater weight loss, general thinning, and profile development as a function of sonication time - with all observed degradation limited to the nitrided layer. Further, the nitride layer was observed to be susceptible to extensive cracking (occasionally leading to spallation), but the cracking was never observed to penetrate into the carburized layer. These screening test results suggest there is no improvement in cavitation-erosion resistance associated with augmentation of the carburizing treatment with plasma nitriding.

  14. RISK D/C

    NASA Technical Reports Server (NTRS)

    Dias, W. C.

    1994-01-01

    RISK D/C is a prototype program which attempts to do program risk modeling for the Space Exploration Initiative (SEI) architectures proposed in the Synthesis Group Report. Risk assessment is made with respect to risk events, their probabilities, and the severities of potential results. The program allows risk mitigation strategies to be proposed for an exploration program architecture and to be ranked with respect to their effectiveness. RISK D/C allows for the fact that risk assessment in early planning phases is subjective. Although specific to the SEI in its present form, RISK D/C can be used as a framework for developing a risk assessment program for other specific uses. RISK D/C is organized into files, or stacks, of information, including the architecture, the hazard, and the risk event stacks. Although predefined, all stacks can be upgraded by a user. The architecture stack contains information concerning the general program alternatives, which are subsequently broken down into waypoints, missions, and mission phases. The hazard stack includes any background condition which could result in a risk event. A risk event is anything unfavorable that could happen during the course of a specific point within an architecture, and the risk event stack provides the probabilities, consequences, severities, and any mitigation strategies which could be used to reduce the risk of the event, and how much the risk is reduced. RISK D/C was developed for Macintosh series computers. It requires HyperCard 2.0 or later, as well as 2Mb of RAM and System 6.0.8 or later. A Macintosh II series computer is recommended due to speed concerns. The standard distribution medium for this package is one 3.5 inch 800K Macintosh format diskette. RISK D/C was developed in 1991 and is a copyrighted work with all copyright vested in NASA. Macintosh and HyperCard are trademarks of Apple Computer, Inc.

  15. Manufacture of sintered silicon nitrides

    NASA Technical Reports Server (NTRS)

    Iwai, T.

    1985-01-01

    Sintered silicon nitrides are manufactured by sintering Si3N powder containing 2 to 15% in wt of a powder mixture composed of nitride powder of lanthanide or Y 100 parts and AIN powder less than 100 parts at 1500 to 1900 deg. temperature under a pressure of less than 200 Kg/sq. cm. The sintered Si3N has high mechanical strength in high temperature. Thus, Si3N4 93.0, Y 5.0 and AlN 2.0% in weight were wet mixed in acetone in N atom, molded and sintered at 1750 deg. and 1000 Kg/sq. cm. to give a sintered body having high hardness.

  16. 75 FR 23571 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-15, DC...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-04

    ... Corporation Model DC- 10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40, DC-10-40F.... ACTION: Final rule. SUMMARY: We are adopting a new airworthiness directive (AD) for certain Model DC-10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40,......

  17. DC Breakdown Experiments

    SciTech Connect

    Calatroni, S.; Descoeudres, A.; Levinsen, Y.; Taborelli, M.; Wuensch, W.

    2009-01-22

    In the context of the CLIC (Compact Linear Collider) project investigations of DC breakdown in ultra high vacuum are carried out in parallel with high power RF tests. From the point of view of saturation breakdown field the best material tested so far is stainless steel, followed by titanium. Copper shows a four times weaker breakdown field than stainless steel. The results indicate clearly that the breakdown events are initiated by field emission current and that the breakdown field is limited by the cathode. In analogy to RF, the breakdown probability has been measured in DC and the data show similar behaviour as a function of electric field.

  18. DC attenuation meter

    DOEpatents

    Hargrove, Douglas L.

    2004-09-14

    A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

  19. Anisotropies in magnetron sputtered carbon nitride thin films

    NASA Astrophysics Data System (ADS)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    2001-04-01

    Carbon nitride CNx (0⩽x⩽0.35) thin films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges have been studied with respect to microstructure using electron microscopy, and elastic modulus using nanoindentation and surface acoustic wave analyses. For growth temperature of 100 °C, the films were amorphous, and with an isotropic Young's modulus of ˜170-200 GPa essentially unaffected by the nitrogen fraction. The films grown at elevated temperatures (350-550 °C) show anisotropic mechanical properties due to a textured microstructure with standing basal planes, as observed from measuring the Young's modulus in different directions. The modulus measured in the plane of the film was ˜60-80 GPa, while in the vertical direction the modulus increased considerably from ˜25 to ˜200 GPa as the nitrogen content was increased above ˜15 at. %.

  20. Nanotribological performance of fullerene-like carbon nitride films

    NASA Astrophysics Data System (ADS)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan; Chiñas-Castillo, Fernando; Espinoza-Beltrán, Francisco Javier

    2014-09-01

    Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009-0.022) that is lower than amorphous CNx films (CoF ∼ 0.028-0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp3 CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

  1. Carbothermal synthesis of aluminum nitride

    SciTech Connect

    Silverman, L.D. )

    1988-07-01

    A synthetic route is described for making carbothermally reduced powders from colloidal oxide precursors trapped in a polymer matrix. The entrapping resin, which is formed by polymerization of a monomer dissolved in the colloid, serves both to minimize particle agglomeration during reaction and as the source of carbon for reduction. Following reduction, the remaining carbon matrix is removed by oxidation. This strategy was used to synthesize aluminum nitride powder via trapping of colloidal alumina in poly(furfuryl alcohol) resin.

  2. High upper critical field in disordered niobium nitride superconductor

    SciTech Connect

    Baskaran, R. Thanikai Arasu, A. V.; Amaladass, E. P.; Janawadkar, M. P.

    2014-10-28

    Superconducting Niobium Nitride thin films have been deposited on glass, aluminum nitride buffered glass, and oxidized silicon substrates by reactive DC magnetron sputtering at ambient substrate temperatures. The crystal structure of these thin films has been determined to be cubic fcc B1 structure by Glancing Incidence X-Ray Diffraction analysis. The superconducting transition temperatures of the thin films were measured to be greater than 11.6 K with a maximum of 13.4 K. The negative temperature coefficient of resistance observed in these thin films indicates the presence of disorder. Magneto-resistance measurements have been carried out on these thin films patterned into standard four probe geometry upto a maximum magnetic field of 12 T for two films and upto 15 T for the other two films. The dependence of transition temperature on the applied field is analyzed to estimate the upper critical field. The upper critical field for most of the films was estimated to exceed 35 T, while one of the most disordered films had an estimated upper critical field greater than 70 T.

  3. Silicon nitride equation of state

    NASA Astrophysics Data System (ADS)

    Brown, Robert C.; Swaminathan, Pazhayannur K.

    2017-01-01

    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  4. Silicon Nitride Equation of State

    NASA Astrophysics Data System (ADS)

    Swaminathan, Pazhayannur; Brown, Robert

    2015-06-01

    This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

  5. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Shuleiko, D. V.; Ilin, A. S.

    2016-08-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa93/Si3N4 and SiN0.8/Si3N4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals.

  6. Ultrananocrystalline Diamond-Coated Microporous Silicon Nitride Membranes for Medical Implant Applications

    NASA Astrophysics Data System (ADS)

    Skoog, Shelby A.; Sumant, Anirudha V.; Monteiro-Riviere, Nancy A.; Narayan, Roger J.

    2012-04-01

    Ultrananocrystalline diamond (UNCD) exhibits excellent biological and mechanical properties, which make it an appropriate choice for promoting epidermal cell migration on the surfaces of percutaneous implants. We deposited a ~150 nm thick UNCD film on a microporous silicon nitride membrane using microwave plasma chemical vapor deposition. Scanning electron microscopy and Raman spectroscopy were used to examine the pore structure and chemical bonding of this material, respectively. Growth of human epidermal keratinocytes on UNCD-coated microporous silicon nitride membranes and uncoated microporous silicon nitride membranes was compared using the 3-(4,5-dimethylthiazol-2-yl)2,5-diphenyltetrazolium bromide (MTT) assay. The results show that the UNCD coating did not significantly alter the viability of human epidermal keratinocytes, indicating potential use of this material for improving skin sealing around percutaneous implants.

  7. DYLOS DC110

    EPA Science Inventory

    The Dylos DC1100 air quality monitor measures particulate matter (PM) to provide a continuous assessment of indoor air quality. The unit counts particles in two size ranges: large and small. According to the manufacturer, large particles have diameters between 2.5 and 10 micromet...

  8. DC arc weld starter

    DOEpatents

    Campiotti, Richard H.; Hopwood, James E.

    1990-01-01

    A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

  9. Fabrication and characterization of silicon nitride directional coupler interferometer for sensing aptamer hybridization

    NASA Astrophysics Data System (ADS)

    Okubo, K.; Uchiyamada, K.; Yokokawa, M.; Asakawa, K.; Suzuki, H.

    2016-03-01

    We used silicon nitride (Si3N4) directional coupler (DC) interferometers to fabricate evanescent field biosensors for detection of aptamer hybridization. The DC detects temporal changes in refractive index (RI) as changes in the relative intensities of near-fields. Numerical simulation provided information for sensitivity of the DC as well as preferable dimensions of single mode waveguides. The result suggests that lengthening the DC improves its sensitivity. Another approach to realize high sensitivity was to make the coupling region of the DC longer for a given complete coupling length Lc. A folded DC is also presented based on calculations using Si waveguides. Here a meander-line with an array of segmented DCs and asymmetric 180°-curved waveguides was accommodated in a (100 μm)2 square area. Phases of propagating lights within two curved waveguides could be coincided. This cascade-connection of the segments of the DCs facilitated highly sensitive detection of biomolecules and a flexible sensor design. Signal dependences on device length and bulk RI change were evaluated by end-fire coupling measurements. The optical intensities agreed well with the corresponding fitting curve and the curve calculated based on the coupled mode theory.

  10. Early Oscillation Detection for DC/DC Converter Fault Diagnosis

    NASA Technical Reports Server (NTRS)

    Wang, Bright L.

    2011-01-01

    The electrical power system of a spacecraft plays a very critical role for space mission success. Such a modern power system may contain numerous hybrid DC/DC converters both inside the power system electronics (PSE) units and onboard most of the flight electronics modules. One of the faulty conditions for DC/DC converter that poses serious threats to mission safety is the random occurrence of oscillation related to inherent instability characteristics of the DC/DC converters and design deficiency of the power systems. To ensure the highest reliability of the power system, oscillations in any form shall be promptly detected during part level testing, system integration tests, flight health monitoring, and on-board fault diagnosis. The popular gain/phase margin analysis method is capable of predicting stability levels of DC/DC converters, but it is limited only to verification of designs and to part-level testing on some of the models. This method has to inject noise signals into the control loop circuitry as required, thus, interrupts the DC/DC converter's normal operation and increases risks of degrading and damaging the flight unit. A novel technique to detect oscillations at early stage for flight hybrid DC/DC converters was developed.

  11. Low temperature growth of boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Lee, Chee Huei; Xie, Ming; Wang, Jiesheng; Khin Yap, Yoke

    2008-03-01

    Boron nitride nanotubes (BNNTs) are promising nanostuctures that will complement the applications of carbon nanotubes in various emerging areas. However, the synthesis of BNNTs is still challenging and required high growth temperatures (1500 C to 3000 C). Here we will discuss about two approaches for low temperature growth of BNNTs. First, we have reported on the growth of pure BNNTs at 600 C by a plasma-enhanced pulsed-laser deposition (PE-PLD) technique [1]. These BNNTs were grown vertically-aligned on substrates. Latest result on the effect of catalyst, growth temperatures, ambient gas pressures, substrate bias voltages and the growth mechanism will be discussed in the meeting. Secondly, effective growth of BNNTs is recently achieved by conventional thermal chemical vapor deposition (CVD). Our new CVD approach leads to effective growth of long and clean BNNTs at 1200 C. SEM, TEM, EELS, Raman, FTIR, and UV absorption data indicate that these BNNTs are having high structural ordered and a energy band gap > 5.6 eV. [1]. J. Wang et. al, Nano Lett. 5, 2528 (2005).

  12. Infrared Plasmonics with Conductive Ternary Nitrides.

    PubMed

    Metaxa, C; Kassavetis, S; Pierson, J F; Gall, D; Patsalas, P

    2017-03-29

    Conductive transition metal nitrides are emerging as promising alternative plasmonic materials that are refractory and CMOS-compatible. In this work, we show that ternary transition metal nitrides of the B1 structure and consisting of a combination of group-IVb transition metal, such as Ti or Zr, and group III (Sc, Y, Al) or group II (Mg, Ca) elements can have tunable plasmonic activity in the infrared range in contrast to Ta-based ternary nitrides, which exhibit plasmonic performance in the visible and UV ranges. We consider the intrinsic quality factors of surface plasmon polariton for the ternary nitrides, and we calculate the dispersion of surface plasmon polariton and the field enhancement at the vicinity of nitride/silica interfaces. Based on these calculations, it is shown that among these nitrides the most promising are TixSc1-xN and TixMg1-xN. In particular, TixSc1-xN can have plasmonic activity in the usual telecom bands at 850, 1300, and 1550 nm. Still, these nitrides exhibit substantial electronic losses mostly due to fine crystalline grains that deteriorate the plasmonic field enhancement. This unequivocally calls for improved growth processes that would enable the fabrication of such ternary nitrides of high crystallinity.

  13. Low loss nitride ceramics for terahertz windows

    NASA Astrophysics Data System (ADS)

    Naftaly, M.; Greenslade, P. J.; Miles, R. E.; Evans, D.

    2009-09-01

    Terahertz frequency transmission measurements on ceramic boron nitride and aluminium nitride are described. The absorption coefficients and refractive indices of these materials show that they have high terahertz transparency, which together with their high melting temperatures and mechanical strength makes them particularly suitable for use as THz windows in high pressure and/or high temperature applications.

  14. Method of preparation of uranium nitride

    DOEpatents

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  15. Ion-beam nitriding of steels

    NASA Technical Reports Server (NTRS)

    Salik, Joshua (Inventor); Hubbell, Theodore E. (Inventor)

    1987-01-01

    A surface of a steel substrate is nitrided without external heating by exposing it to a beam of nitrogen ions under low pressure, a pressure much lower than that employed for ion-nitriding. An ion source is used instead of a glow discharge. Both of these features reduce the introduction of impurities into the substrate surface.

  16. Fatigue life of silicon nitride balls

    SciTech Connect

    Galbato, A.T.; Cundill, R.T.; Harris, T.A. SKF Engineering and Research Center, Nieuwegein Pennsylvania State Univ., University Park )

    1992-11-01

    Because its specific weight is 40 percent that of steel, silicon nitride has been considered as a rolling element material in very high speed ball and roller bearings. Furthermore, similar to steel components, hot pressed silicon nitride rolling components, when properly manufactured, have demonstrated the capacity to fail in a non-catastrophic manner, i.e., fatigue of the rolling contact surfaces. In this investigation, hot isostatically-pressed silicon nitride balls were endurance-tested using a NASA 5-ball rig and the results were compared against similarly tested VIMVAR M50 balls. The silicon nitride balls demonstrated fatigue lives many times those obtained for the M50 balls. Therefore it is concluded that silicon nitride can be effectively employed in applications where steel rolling element life has previously proved to be a limiting factor. 12 refs.

  17. Advanced optical modelling of dynamically deposited silicon nitride layers

    NASA Astrophysics Data System (ADS)

    Borojevic, N.; Hameiri, Z.; Winderbaum, S.

    2016-07-01

    Dynamic deposition of silicon nitrides using in-line plasma enhanced chemical vapor deposition systems results in non-uniform structure of the dielectric layer. Appropriate analysis of such layers requires the optical characterization to be performed as a function of the layer's depth. This work presents a method to characterize dynamically deposited silicon nitride layers. The method is based on the fitting of experimental spectroscopic ellipsometry data via grading of Tauc-Lorentz optical parameters through the depth of the layer. When compared with the standard Tauc-Lorentz fitting procedure, used in previous studies, the improved method is demonstrating better quality fits to the experimental data and revealing more accurate optical properties of the dielectric layers. The most significant advantage of the method is the ability to extract the depth profile of the optical properties along the direction of the layer normal. This is enabling a better understanding of layers deposited using dynamic plasma enhanced chemical vapor deposition systems frequently used in the photovoltaic industry.

  18. Molten-Salt-Based Growth of Group III Nitrides

    DOEpatents

    Waldrip, Karen E.; Tsao, Jeffrey Y.; Kerley, Thomas M.

    2008-10-14

    A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

  19. Hard carbon nitride and method for preparing same

    DOEpatents

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.

    1992-05-05

    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  20. III-Nitride advanced technologies and equipment for microelectronics

    NASA Astrophysics Data System (ADS)

    Petrov, S. I.; Alexeev, A. N.; Mamaev, V. V.; Krasovitsky, D. M.; Chaly, V. P.

    2016-12-01

    Using of complex equipment SemiTEq shown in example of a closed cycle of basic technological operations for production of high-power field microwave transistors based on gallium nitride in the "Svetlana-Rost" JSC. Basic technological operations are shown: MBE growth of heterostructures, metal deposition of contacts using electron-beam evaporation system, thermal annealing of ohmic contacts, meza-isolation plasma-chemical etching and dielectric plasma deposition. The main problems during the technological route as well as ways to solve are discussed. In particular, ways to reduce the dislocation density in the active region of the transistor heterostructures grown on the mismatched substrates are described in detail. Special attention given to the homogeneity and reproducibility both after some manufacturing operations and applied to the end product.

  1. Computer Simulation of Synthesis of Boron-Nitride Nanostructures

    NASA Astrophysics Data System (ADS)

    Krstic, Predrag; Han, Longtao

    2016-10-01

    Synthesis of boron-nitride fullerenes, nano-cocoons and nano-cages by self-organization of BN molecules in a high-temperature plasma is simulated with the DFT tight-binding method. No boron nano-cluster or catalytic nanoparticles are needed to initiate this process. By varying the plasma temperature, incoming flux of BN molecule, and the total time of growth, we can simulate growth of sp2 cages of various shape, size and quality. Role of hydrogen in the syntheses is also considered, with the simulation of HBNH and H2BNH2 molecules as feedstock. This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Material Sciences and Engineering Division.

  2. The Powder-Pack Nitriding Process: Growth Kinetics of Nitride Layers on Pure Iron

    NASA Astrophysics Data System (ADS)

    Campos-Silva, I.; Ortiz-Dominguez, M.; Elias-Espinosa, M.; Vega-Morón, R. C.; Bravo-Bárcenas, D.; Figueroa-López, U.

    2015-09-01

    In this study, the growth kinetics of nitride layers that develop during the powder-pack nitriding process on the surface of ARMCO pure iron was estimated. The powder-pack nitriding of pure iron was performed according to the Pulnieren© (H.E.F. Durferrit) method using a "Pulnier" powder and an activator, at 798-848 K with different exposure times (2-12 h) for each temperature. In addition, for the entire set of nitriding conditions, three different activator/"Pulnier" powder ratios (0.20, 0.25, and 0.35) were used to evaluate the activation level during the growth of nitride layers. The kinetics of the nitride layers over the surface of ARMCO pure iron were estimated by two mathematical approaches, that consider the mass balance equations at the growth interphases. The resulting expressions for the effective diffusion coefficients in the nitride layers were evaluated as a function of nitriding temperatures and activator/"Pulnier" powder ratio. Finally, based on the experimental parameters ascribed to the powder-pack nitriding process, two expressions were proposed to estimate the nitride layer thicknesses at 798 and 823 K after 9 h of exposure for each temperature, to validate the diffusion models used in this work.

  3. Synthesis of transition metal nitride by nitridation of metastable oxide precursor

    SciTech Connect

    Wang, Huamin; Wu, Zijie; Kong, Jing; Wang, Zhiqiang; Zhang, Minghui

    2012-10-15

    Metastable transition metal oxides were used as precursors to synthesize transition metal nitrides at low temperature. Amorphous MoO{sub 2} was prepared by reduction of (NH{sub 4}){sub 6}Mo{sub 7}O{sub 24} solution with hydrazine. As-synthesized amorphous MoO{sub 2} was transformed into fcc {gamma}-Mo{sub 2}N at 400 Degree-Sign C and then into hexagonal {delta}-MoN by further increasing the temperature to 600 Degree-Sign C under a NH{sub 3} flow. The nitridation temperature employed here is much lower than that employed in nitridation of crystalline materials, and the amorphous materials underwent a unique nitridation process. Besides this, the bimetallic nitride Ni{sub 2}Mo{sub 3}N was also synthesized by nitridating amorphous bimetallic precursor. These results suggested that the nitridation of amorphous precursor possessed potential to be a general method for synthesizing many interstitial metallic compounds, such as nitrides and carbides at low temperature. - graphical abstract: Amorphous oxide was used as new precursor to prepare nitride at low temperature. Pure {gamma}-Mo{sub 2}N and {delta}-MoN were obtained at 400 Degree-Sign C and at 600 Degree-Sign C, respectively. Highlights: Black-Right-Pointing-Pointer We bring out a new method to synthesize transition metal nitrides at low temperature. Black-Right-Pointing-Pointer Both mono- and bimetallic molybdenum nitrides were synthesized at a mild condition. Black-Right-Pointing-Pointer The formation of two different molybdenum nitrides {gamma}-Mo{sub 2}N and {delta}-MoN can be controlled from the same metastable precursor. Black-Right-Pointing-Pointer The nitridation temperature was much lower than that reported from crystalline precursors. Black-Right-Pointing-Pointer The metastable precursor had different reaction process in comparison with crystalline precursor.

  4. Aluminum nitride, Scandium nitride, and Aluminum-Scandium-Nitride ternary alloys : Structural, optical, and electrical properties

    NASA Astrophysics Data System (ADS)

    Deng, Ruopeng

    Al and Sc are iso-electric, both of which have three valence electrons. Their nitrides AlN and ScN both have high melting points, high hardness, and good chemical inertness. And their distinct properties find applications in different areas: AlN in piezoelectric acoustic-wave devices, and ScN as candidate for high-temperature thermoelectricity. While there are unsettled problems to solve for AlN and ScN alone, which are to obtain tilted c-axis texture in AlN for shear mode acoustic-wave devices to maximize performance, and to determine electronic band structure of ScN that has been long debated due to free carrier effect, the alloying between AlN and ScN is also intriguing in that the ternary alloy Al-Sc-N connects their similarity and opens even wider possibility and greater potential. The significantly enhanced piezoelectric coefficient in the alloy compared to pure AlN is one of the best examples that is little understood, and alternate bandgap engineering in LED fabrication would probably be another contribution from the alloy. Structural, optical, and electrical properties of AlN, ScN, and Al-Sc-N ternary alloys are thus studied in order to answer these questions, and to explore more fundamental physics characteristics within these nitride materials. For the purpose of achieving tilted c-axis texture in AlN, off-axis deposition is conducted with a variable deposition angle α = 0-84° in 5 mTorr pure N2 at room temperature. XRD pole figure analysis show that layers deposited from a normal angle (α = 0°) exhibit fiber texture, with the c-axis tilted by 42+/-2° off the substrate normal. However, as α is increased to 45°, two preferred in-plane grain orientations emerge, with populations I and II having the c-axis tilted towards and away from the deposition flux, by 53+/-2° and 47+/-1° off the substrate normal, respectively. Increasing alpha further to 65 and 84°, results in the development of a single population II with a 43+/-1° tilt. The observed tilt

  5. Preface: Bulk nitride workshop 2015

    NASA Astrophysics Data System (ADS)

    Freitas, Jaime A.; Pasova, Tania; Bockowski, Michal; Fujioka, Hiroshi

    2016-12-01

    The 9th ;International Workshop on Bulk Nitride Semiconductors; (IWBNS-IX) was held in Wonju, South Korea, from November 2-6, 2015, following the eight previous workshops held in November 2000 (Brazil), May 2002 (Brazil), September 2004 (Poland), October 2006 (Japan), September 2007 (Brazil), August 2009 (Poland), March 2011 (Japan), and October 2013 (Germany). The quietude and the beautiful surrounding nature of the Hansol Oak Valley provided the right environment to host the latest edition of this workshop series, the first one held in South Korea.

  6. AC/DC converter

    NASA Astrophysics Data System (ADS)

    Jain, Praveen K.

    1992-08-01

    In a system such as a 20 kHz space station primary electrical power distribution system, power conversion from AC to DC is required. Some of the basic requirements for this conversion are high efficiency, light weight and small volume, regulated output voltage, close to unity input power factor, distortionless input current, soft-starting, low electromagnetic interference, and high reliability. An AC-to-DC converter is disclosed which satisfies the main design objectives of such converters for use in space. The converter of the invention comprises an input transformer, a resonant network, a current controller, a diode rectifier, and an output filter. The input transformer is for connection to a single phase, high frequency, sinusoidal waveform AC voltage source and provides a matching voltage isolating from the AC source. The resonant network converts this voltage to a sinusoidal, high frequency bidirectional current output, which is received by the current controller to provide the desired output current. The diode rectifier is connected in parallel with the current controller to convert the bidirectional current into a unidirectional current output. The output filter is connected to the rectifier to provide an essentially ripple-free, substantially constant voltage DC output.

  7. 76 FR 18022 - Airworthiness Directives; The Boeing Company Model DC-9-14, DC-9-15, and DC-9-15F Airplanes; and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-01

    ... Model DC-9-14, DC-9- 15, and DC-9-15F Airplanes; and DC-9-20, DC-9-30, DC-9-40, and DC-9-50 Series..., Room W12-140, 1200 New Jersey Avenue, SE., Washington, DC 20590. FOR FURTHER INFORMATION CONTACT...) This AD applies to The Boeing Company Model DC-9-14, DC-9- 15, DC-9-15F, DC-9-21, DC-9-31,......

  8. 75 FR 47242 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-9-14, DC-9-15, and DC-9-15F...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-05

    ... Corporation Model DC- 9-14, DC-9-15, and DC-9-15F Airplanes; and Model DC-9-20, DC-9-30, DC- 9-40, and DC-9-50... airworthiness directive (AD) that applies to certain Model DC-9-14 and DC-9-15 airplanes; and Model DC-9-20, DC-9-30, DC-9-40, and DC-9-50 series airplanes. The existing AD currently......

  9. Isolated Bidirectional DC-DC Converter for Hybrid Electric Vehicle Application

    DTIC Science & Technology

    2006-06-13

    34Approved for public release: distribution is unlimited" Isolated Bidirectional DC-DC Converter for Hybrid Electric Vehicle Applications Sonya...requirements for DC-DC converters for electric and hybrid vehicles . This paper introduces a bidirectional, isolated DC-DC converter for medium power...the design and build of a medium power DC-DC converter . Key words: Power Converter , DC-DC, Hybrid Electric Vehicle , Battery, Galvanically Isolation

  10. Diagnostics of ballistic electrons in a dc/rf hybrid capacitively coupled discharge

    NASA Astrophysics Data System (ADS)

    Xu, Lin; Chen, Lee; Funk, Merritt; Ranjan, Alok; Hummel, Mike; Bravenec, Ron; Sundararajan, Radha; Economou, Demetre J.; Donnelly, Vincent M.

    2008-12-01

    The energy distribution of ballistic electrons in a dc/rf hybrid parallel-plate capacitively coupled plasma reactor was measured. Ballistic electrons originated as secondaries produced by ion and electron bombardment of the electrodes. The energy distribution of ballistic electrons peaked at the value of the negative bias applied to the dc electrode. As that bias became more negative, the ballistic electron current on the rf substrate electrode increased dramatically. The ion current on the dc electrode also increased.

  11. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    NASA Technical Reports Server (NTRS)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  12. The Use of DC Glow Discharges as Undergraduate Educational Tools

    SciTech Connect

    Stephanie A. Wissel and Andrew Zwicker, Jerry Ross, and Sophia Gershman

    2012-10-09

    Plasmas have a beguiling way of getting students excited and interested in physics. We argue that plasmas can and should be incorporated into the undergraduate curriculum as both demonstrations and advanced investigations of electromagnetism and quantum effects. Our device, based on a direct current (DC) glow discharge tube, allows for a number of experiments into topics such as electrical breakdown, spectroscopy, magnetism, and electron temperature.

  13. Nitridation and CVD reactions with hydrazine

    SciTech Connect

    Vogt, K.W.; Kohl, P.A.; Abys, J.A.

    1995-10-01

    The low-temperature nitridation of gallium arsenide, silicon and transition metals was investigated using hydrazine. Gallium nitride films were grown on gallium arsenide (GaAs) by direct reaction of the semiconductor surface layers with hydrazine at 200--400 C. Auger electron spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses show that the films are primarily gallium nitride with a small oxide impurity. Thin nitride films ({approximately}15{angstrom}) were grown on silicon by reaction with hydrazine at 300--500 C. Ellipsometry results suggest that the film growth goes through different phases following linear, parabolic and logarithmic functions with time. XPS analysis shows that the nitride films could be formed at much lower temperatures than possible with ammonia (300 vs. 600 C). The formation of numerous transition metal nitrides (Co, Cr, Fe, Mo, Si, Ta, Ti, V, and W) by reaction with hydrazine at 400 C is demonstrated, as well as the chemical vapor deposition of boron nitride films from diborane and hydrazine reactants. The temperature at the mixing point was critical in determining the final composition of the film. A 1-D transport model suggests that the reaction rate at 400 C was kinetically limited. The results also agree qualitatively with thermodynamic equilibrium calculations.

  14. FOREWORD: The physics of III-V nitrides The physics of III-V nitrides

    NASA Astrophysics Data System (ADS)

    Ridley, B. K.

    2009-04-01

    thought to be associated with the coupling of plasma and phonon modes, and this is discussed by Dyson. The intrinsic cause of phonon decay is the anharmonic interaction involving three phonons, and this process is described for zinc blende BN and hexagonal AlN, GaN and InN by Srivastava. The principal electron scattering mechanism at room temperature is associated with the interaction with polar optical modes. At high fields, transfer to the upper conduction-band valleys can take place and this involves the deformation-potential interaction. Deformation potentials have been derived by Yamakawa et al for GaN, and they have been incorporated into a cellular Monte Carlo simulation to describe high-field transport. In high-power devices, thermal as well as electronic transport is important. The thermal conductivity of the substrate of devices is a vital factor, and the possible use of AlN ceramics is discussed by AlShaikhi and Srivastarva. A striking device based on a zinc blende superlattice is the quantum cascade laser. Exploiting intersubband transitions in the AlN/GaN superlattice for the high-speed detection of infrared light is described by Hofstetter et al, clearly a first step towards a nitride based quantum cascade laser. In bulk material the displacement of As by N that transforms GaAs to GaN produces a huge change in properties. Adding a small amount of N to GaAs might be expected to produce a gradual more-or-less linear shift towards the properties of GaN, but this turns out to be far from the case. The strange properties of dilute nitrides have intrigued many workers in recent years. Its curious bandstructure suggested that hot-electron transport could exhibit a negative differential resistance, and a report on this topic can be found in the article by Patane et al A comprehensive study of transport of electrons and holes in dilute nitride/GaAs quantum wells is reported by Sun et al. An unusual new device—a spin filter—is presaged by the work of Zhao et al on

  15. Electrospun Gallium Nitride Nanofibers (abstract)

    NASA Astrophysics Data System (ADS)

    Meléndez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-04-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  16. Transparent polycrystalline cubic silicon nitride.

    PubMed

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-17

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  17. Ultralow wear of gallium nitride

    NASA Astrophysics Data System (ADS)

    Zeng, Guosong; Tan, Chee-Keong; Tansu, Nelson; Krick, Brandon A.

    2016-08-01

    Here, we reveal a remarkable (and surprising) physical property of GaN: it is extremely wear resistant. In fact, we measured the wear rate of GaN is approaching wear rates reported for diamond. Not only does GaN have an ultralow wear rate but also there are quite a few experimental factors that control the magnitude of its wear rate, further contributing to the rich and complex physics of wear of GaN. Here, we discovered several primary controlling factors that will affect the wear rate of III-Nitride materials: crystallographic orientation, sliding environment, and coating composition (GaN, InN and InGaN). Sliding in the ⟨ 1 2 ¯ 10 ⟩ is significantly lower wear than ⟨ 1 1 ¯ 00 ⟩ . Wear increases by 2 orders of magnitude with increasing humidity (from ˜0% to 50% RH). III-Nitride coatings are promising as multifunctional material systems for device design and sliding wear applications.

  18. Transparent polycrystalline cubic silicon nitride

    NASA Astrophysics Data System (ADS)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  19. Transparent polycrystalline cubic silicon nitride

    PubMed Central

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-01-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  20. Surface photovoltage spectroscopy of carbon nitride powder

    SciTech Connect

    Dittrich, Th.; Fiechter, S.; Thomas, A.

    2011-08-22

    Powder of carbon nitride has been investigated by surface photovoltage spectroscopy at temperatures between 30 deg. C and 150 deg. C. Photo-generated holes were preferentially separated towards the external surface. Electronic states below the optical band gap from which charge separation may be possible have not been observed. The band gap of the investigated carbon nitride decreased from 2.93 to 2.80 eV with increasing temperature from 30 deg. C to 150 deg. C. The material exhibits a higher optical transition at E = 3.6 eV. Results are discussed from the point of view of photo-catalytic water splitting with carbon nitride.