Inorganic-polymer-derived dielectric films

DOEpatents

Brinker, C.J.; Keefer, K.D.; Lenahan, P.M.

1985-02-25

A method is disclosed for coating a substrate with a thin film of a predetermined porosity. The method comprises: depositing the thin film on the substrate from a non-gelled solution comprising at least one metal alkoxide of a polymeric network forming cation, water, an alcohol compatible with the hydrolysis and the polymerization of the metal alkoxide, and an acid or a base; prior to said depositing step, controlling the porosity and structure of said coating for a given composition of said solution exclusive of the acid or base component and the water component, by adjusting each of the water content, the pH, the temperature and the time of standing of said solution, increasing/descreasing the water content or the pH to increase/decrease the pore size of said coating, and increasing/decreasing the temperature or time of standing of said solution to increase/decrease the pore size of said coating; and curing said deposited film at a temperature effective for curing whereby there is obtained a thin film coating of a predetermined porosity on the substrate.

A versatile substrate design for LEED and AES studies in uhv.

NASA Technical Reports Server (NTRS)

Holloway, P. H.; Hudson, J. B.

1972-01-01

A substrate design is described that incorporates a single crystal disk into an electrically isolated, electron bombardment heated mount. Electron and photon leakage from the bombarding filament are prevented, and LEED and AES may be used at elevated temperatures. A cold finger, thermally coupled to the mount, decreases the time lost between cleaning the crystal and cooling it to the desired observation temperature. The cold finger also allows observation at temperatures below ambient.

Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer

NASA Astrophysics Data System (ADS)

Takeuchi, Kai; Fujino, Masahisa; Matsumoto, Yoshiie; Suga, Tadatomo

2018-04-01

Techniques of handling thin and fragile substrates in a high-temperature process are highly required for the fabrication of semiconductor devices including thin film transistors (TFTs). In our previous study, we proposed applying the surface activated bonding (SAB) method using Si intermediate layers to the bonding and debonding of glass substrates. The SAB method has successfully bonded glass substrates at room temperature, and the substrates have been debonded after heating at 450 °C, in which TFTs are fabricated on thin glass substrates for LC display devices. In this study, we conducted the bonding and debonding of Si and glass in order to understand the mechanism in the proposed process. Si substrates are also successfully bonded to glass substrates at room temperature and debonded after heating at 450 °C using the proposed bonding process. By the composition analysis of bonding interfaces, it is clarified that the absorbed water on the glass forms interfacial voids and cause the decrease in bond strength.

Defect analysis of the LED structure deposited on the sapphire substrate

NASA Astrophysics Data System (ADS)

Nie, Qichu; Jiang, Zhimin; Gan, Zhiyin; Liu, Sheng; Yan, Han; Fang, Haisheng

2018-04-01

Transmission electron microscope (TEM) and double-crystal X-ray diffraction (DCXRD) measurements have been performed to investigate dislocations of the whole structure of the LED layers deposited on both the conventional (unpatterned sapphire substrate, UPSS) and patterned sapphire substrates (PSS). TEM results show that there exists a dislocation-accumulated region near the substrate/GaN interface, where the dislocation density is much higher with the UPPS than that with the PSS. It indicates that the pattern on the substrate surface is able to block the formation and propagation of dislocations. Further analysis discloses that slope of the pattern is found to suppress the deposition of GaN, and thus to provide more spaces for the epitaxially lateral overgrowth (ELO) of high temperature GaN, which significantly reduces the number of the initial islands, and minimizes dislocation formation due to the island coalescence. V-defect incorporating the threading dislocation is detected in the InGaN/GaN multi-quantum wells (MQWs), and its propagation mechanism is determined as the decrease of the surface energy due to the incorporation of indium. In addition, temperature dependence of dislocation formation is further investigated. The results show that dislocation with the screw component decreases monotonously as temperature goes up. However, edge dislocation firstly drops, and then increases by temperature due to the enhanced thermal mismatch stress. It implies that an optimized range of the growth temperature can be obtained to improve quality of the LED layers.

Enzymatic mechanisms of soil-carbon response to temperature on Mt. Kilimanjaro

NASA Astrophysics Data System (ADS)

Blagodatskaya, Evgenia; Blagodatskiy, Sergey; Kuzyakov, Yakov

2016-04-01

Short-term acceleration of soil organic matter (SOM) decomposition by increasing temperature contradicts the acclimation observed in long-term studies. We used the unique altitudinal gradient (from colline tropical zone to subalpine zone) on Mt. Kilimanjaro to demonstrate the mechanisms of short- and long-term acclimation of extra- and intracellular enzymes that decompose polymers (cellulose, chitin, phytate) and oxidize monomers (14C-glucose). Basing on Michaelis-Menten kinetics we determined the enzymes affinity to substrate (Km) and mineralization potential of heterotrophic microorganisms (Vmax) 1) for three hydrolytic enzymes: β-1,4-glucosidase, N-acetyl- β -D-glucosaminidase and phosphatase by the application of fluorogenically labeled substrates and 2) for mineralization of 14C-labeled glucose by substrate-dependent respiratory response. Here we show that the amount of available substrate is responsible for temperature sensitivity of hydrolysis of polymers in soil, whereas monomers oxidation to CO2 does not depend on substrate amount and is mainly temperature governed. We also found that substrate affinity of enzymes (which is usually decreases with the temperature) differently responded to warming for the process of depolymerisation versus monomers oxidation. We suggest the mechanism to temperature acclimation based on different temperature sensitivity of enzymes kinetics for hydrolysis of polymers and for monomers oxidation

Synthesis, characterization and ellipsometric study of ultrasonically sprayed Co3O4 films

NASA Astrophysics Data System (ADS)

Gençyılmaz, O.; Taşköprü, T.; Atay, F.; Akyüz, İ.

2015-10-01

In the present study, cobalt oxide (Co3O4) films were produced using ultrasonic spray pyrolysis technique onto the glass substrate at different temperatures (200-250-300-350 °C). The effect of substrate temperature on the structural, optical, surface and electrical properties of Co3O4 films was reported. Thickness, refractive index and extinction coefficient of the films were determined by spectroscopic ellipsometry, and X-ray diffraction analyses revealed that Co3O4 films were polycrystalline fcc structure and the substrate temperature significantly improved the crystal structure of Co3O4 films. The films deposited at 350 °C substrate temperature showed the best structural quality. Transmittance, absorbance and reflectance spectra were taken by means of UV-Vis spectrophotometer, and optical band gap values were calculated using optical method. Surface images and roughness values of the films were taken by atomic force microscopy to see the effect of deposition temperature on surface properties. The resistivity of the films slightly decreases with increase in the substrate temperature from 1.08 × 104 to 1.46 × 102 Ω cm. Finally, ultrasonic spray pyrolysis technique allowed production of Co3O4 films, which are alternative metal oxide film for technological applications, at low substrate temperature.

Motor-substrate interactions in mycoplasma motility explains non-Arrhenius temperature dependence.

PubMed

Chen, Jing; Neu, John; Miyata, Makoto; Oster, George

2009-12-02

Mycoplasmas exhibit a novel, substrate-dependent gliding motility that is driven by approximately 400 "leg" proteins. The legs interact with the substrate and transmit the forces generated by an assembly of ATPase motors. The velocity of the cell increases linearly by nearly 10-fold over a narrow temperature range of 10-40 degrees C. This corresponds to an Arrhenius factor that decreases from approximately 45 k(B)T at 10 degrees C to approximately 10 k(B)T at 40 degrees C. On the other hand, load-velocity curves at different temperatures extrapolate to nearly the same stall force, suggesting a temperature-insensitive force-generation mechanism near stall. In this article, we propose a leg-substrate interaction mechanism that explains the intriguing temperature sensitivity of this motility. The large Arrhenius factor at low temperature comes about from the addition of many smaller energy barriers arising from many substrate-binding sites at the distal end of the leg protein. The Arrhenius dependence attenuates at high temperature due to two factors: 1), the reduced effective multiplicity of energy barriers intrinsic to the multiple-site binding mechanism; and 2), the temperature-sensitive weakly facilitated leg release that curtails the power stroke. The model suggests an explanation for the similar steep, sub-Arrhenius temperature-velocity curves observed in many molecular motors, such as kinesin and myosin, wherein the temperature behavior is dominated not by the catalytic biochemistry, but by the motor-substrate interaction.

Motor-Substrate Interactions in Mycoplasma Motility Explains Non-Arrhenius Temperature Dependence

PubMed Central

Chen, Jing; Neu, John; Miyata, Makoto; Oster, George

2009-01-01

Abstract Mycoplasmas exhibit a novel, substrate-dependent gliding motility that is driven by ∼400 “leg” proteins. The legs interact with the substrate and transmit the forces generated by an assembly of ATPase motors. The velocity of the cell increases linearly by nearly 10-fold over a narrow temperature range of 10–40°C. This corresponds to an Arrhenius factor that decreases from ∼45 kBT at 10°C to ∼10 kBT at 40°C. On the other hand, load-velocity curves at different temperatures extrapolate to nearly the same stall force, suggesting a temperature-insensitive force-generation mechanism near stall. In this article, we propose a leg-substrate interaction mechanism that explains the intriguing temperature sensitivity of this motility. The large Arrhenius factor at low temperature comes about from the addition of many smaller energy barriers arising from many substrate-binding sites at the distal end of the leg protein. The Arrhenius dependence attenuates at high temperature due to two factors: 1), the reduced effective multiplicity of energy barriers intrinsic to the multiple-site binding mechanism; and 2), the temperature-sensitive weakly facilitated leg release that curtails the power stroke. The model suggests an explanation for the similar steep, sub-Arrhenius temperature-velocity curves observed in many molecular motors, such as kinesin and myosin, wherein the temperature behavior is dominated not by the catalytic biochemistry, but by the motor-substrate interaction. PMID:19948122

Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

O'Steen, M. L.; Fedler, F.; Hauenstein, R. J.

1999-10-01

Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1-xN epitaxial materials. HRXRD results for InxGa1-xN/GaN superlattices reveal a particularly strong dependence of average alloy composition x¯ upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x¯ with increasing growth temperature within the narrow range 590-670 °C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss.

Yield and cold storage of Trichoderma conidia is influenced by substrate pH and storage temperature.

PubMed

Steyaert, Johanna M; Chomic, Anastasia; Nieto-Jacobo, Maria; Mendoza-Mendoza, Artemio; Hay, Amanda J; Braithwaite, Mark; Stewart, Alison

2017-05-01

In this study we examined the influence of the ambient pH during morphogenesis on conidial yield of Trichoderma sp. "atroviride B" LU132 and T. hamatum LU593 and storage at low temperatures. The ambient pH of the growth media had a dramatic influence on the level of Trichoderma conidiation and this was dependent on the strain and growth media. On malt-extract agar, LU593 yield decreased with increasing pH (3-6), whereas yield increased with increasing pH for LU132. During solid substrate production the reverse was true for LU132 whereby yield decreased with increasing pH. The germination potential of the conidia decreased significantly over time in cold storage and the rate of decline was a factor of the strain, pH during morphogenesis, growth media, and storage temperature. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lobanov, D. N., E-mail: dima@ipmras.ru; Novikov, A. V.; Yunin, P. A.

2016-11-15

In this publication, the results of development of the technology of the epitaxial growth of GaN on single-crystal langasite substrates La{sub 3}Ga{sub 5}SiO{sub 14} (0001) by the plasma-assisted molecular-beam epitaxy (PA MBE) method are reported. An investigation of the effect of the growth temperature at the initial stage of deposition on the crystal quality and morphology of the obtained GaN layer is performed. It is demonstrated that the optimal temperature for deposition of the initial GaN layer onto the langasite substrate is about ~520°C. A decrease in the growth temperature to this value allows the suppression of oxygen diffusion frommore » langasite into the growing layer and a decrease in the dislocation density in the main GaN layer upon its subsequent high-temperature deposition (~700°C). Further lowering of the growth temperature of the nucleation layer leads to sharp degradation of the GaN/LGS layer crystal quality. As a result of the performed research, an epitaxial GaN/LGS layer with a dislocation density of ~10{sup 11} cm{sup –2} and low surface roughness (<2 nm) is obtained.« less

Approach to Fabricate Rigid Substrate for 2.4 GHz Inverted-F Antenna Using a Room Temperature Curable Dielectric Ink on Photo and Nanopaper

NASA Astrophysics Data System (ADS)

Sowpati, A. K.; Nelo, M.; Varghese, J.; Liimatainen, H.; Visanko, M.; Sebastian, M. T.; Jantunen, H.

2018-05-01

The effect of a room temperature curable dielectric ink (ZrSiO4) printed on commercial photo paper and prepared nanopaper on the dielectric properties at 2.4 GHz are studied. In both cases, the dielectric layer decreased the relative permittivity and dielectric loss and made the flexible substrates rigid. For the nanopaper, the permittivity decreased from 4.7 to 3.57 and the loss value from 0.12 to 0.04. The measured decreases for the photo paper were from 3.12 to 2.61 and from 0.09 to 0.05, respectively. In the performance of the simulated and fabricated inverted-F antennas, the effect of the dielectric layer could be observed in the decrease of its frequency with about 130 MHz mainly due to the thicker substrate. The measured total efficiency and gain were 83% and 3.4 dB. The proposed approach could be in the future used for further development of the antenna by modification of the dielectric ink with different additives.

Approach to Fabricate Rigid Substrate for 2.4 GHz Inverted-F Antenna Using a Room Temperature Curable Dielectric Ink on Photo and Nanopaper

NASA Astrophysics Data System (ADS)

Sowpati, A. K.; Nelo, M.; Varghese, J.; Liimatainen, H.; Visanko, M.; Sebastian, M. T.; Jantunen, H.

2018-07-01

The effect of a room temperature curable dielectric ink (ZrSiO4) printed on commercial photo paper and prepared nanopaper on the dielectric properties at 2.4 GHz are studied. In both cases, the dielectric layer decreased the relative permittivity and dielectric loss and made the flexible substrates rigid. For the nanopaper, the permittivity decreased from 4.7 to 3.57 and the loss value from 0.12 to 0.04. The measured decreases for the photo paper were from 3.12 to 2.61 and from 0.09 to 0.05, respectively. In the performance of the simulated and fabricated inverted-F antennas, the effect of the dielectric layer could be observed in the decrease of its frequency with about 130 MHz mainly due to the thicker substrate. The measured total efficiency and gain were 83% and 3.4 dB. The proposed approach could be in the future used for further development of the antenna by modification of the dielectric ink with different additives.

Preliminary investigation of single chamber single electrode microbial fuel cell using sewage sludge as a substrate

NASA Astrophysics Data System (ADS)

Sai Chaithanya, M.; Thakur, Somil; Sonu, Kumar; Das, Bhaskar

2017-11-01

A microbial fuel cell (MFC) consists of a cathode and anode; micro-organisms transfer electrons acquired from the degradation of organic matter in the substrate to anode; and thereby to cathode; by using an external circuit to generate electricity. In the present study, a single chamber single electrode microbial fuel cell has been fabricated to generate electricity from the sludge of the sewage treatment plant at two different ambient temperature range of 25 ± 4°C and 32 ± 4°C under aerobic condition. No work has been done yet by using the single electrode in any MFC system; it is hypothesized that single electrode submerged partially in substrate and rest to atmosphere can function as both cathode and anode. The maximum voltage obtained was about 2890 mV after 80 (hrs) at temperature range of 25 ± 4°C, with surface power density of 1108.29 mW/m2. When the ambient temperature was 32 ± 4°C, maximum voltage obtained was 1652 mV after 40 (hrs.) surface power density reduced to 865.57 mW/m2. When amount of substrate was decreased for certain area of electrode at 25 ± 4°C range, electricity generation decreased and it also shortened the time to reach peak voltage. On the other hand, when the ambient temperature was increased to 32 ± 4°C, the maximum potential energy generated was less than that of previous experiment at 25 ± 4°C for the same substrate Also the time to reach peak voltage decreased to 40 hrs. When comparing with other single chamber single electrode MFC, the present model is generating more electricity that any MFC using sewage sludge as substrate except platinum electrode, which is much costlier that electrode used in the present study.

Boiling regimes of impacting drops on a heated substrate under reduced pressure

NASA Astrophysics Data System (ADS)

van Limbeek, Michiel A. J.; Hoefnagels, Paul B. J.; Shirota, Minori; Sun, Chao; Lohse, Detlef

2018-05-01

We experimentally investigate the boiling behavior of impacting ethanol drops on a heated smooth sapphire substrate at pressures ranging from P =0.13 bar to atmospheric pressure. We employ frustrated total internal reflection imaging to study the wetting dynamics of the contact between the drop and the substrate. The spreading drop can be in full contact (contact boiling), it can partially touch (transition boiling), or the drop can be fully levitated (Leidenfrost boiling). We show that the temperature of the boundary between contact and transition boiling shows at most a weak dependence on the impact velocity, but a significant decrease with decreasing ambient gas pressure. A striking correspondence is found between the temperature of this boundary and the static Leidenfrost temperature for all pressures. We therefore conclude that both phenomena share the same mechanism and are dominated by the dynamics taking place at the contact line. On the other hand, the boundary between transition boiling and Leidenfrost boiling, i.e., the dynamic Leidenfrost temperature, increases for increasing impact velocity for all ambient gas pressures. Moreover, the dynamic Leidenfrost temperature coincides for pressures between P =0.13 and 0.54 bar, whereas for atmospheric pressure the dynamic Leidenfrost temperature is slightly elevated. This indicates that the dynamic Leidenfrost temperature is at most weakly dependent on the enhanced evaporation by the lower saturation temperature of the liquid.

Testing the effects of temperature and humidity on printed passive UHF RFID tags on paper substrate

NASA Astrophysics Data System (ADS)

Linnea Merilampi, Sari; Virkki, Johanna; Ukkonen, Leena; Sydänheimo, Lauri

2014-05-01

This article is an interesting substrate material for environmental-friendly printable electronics. In this study, screen-printed RFID tags on paper substrate are examined. Their reliability was tested with low temperature, high temperature, slow temperature cycling, high temperature and high humidity and water dipping test. Environmental stresses affect the tag antenna impedance, losses and radiation characteristics due to their impact on the ink film and paper substrate. Low temperature, temperature cycling and high humidity did not have a radical effect on the measured parameters: threshold power, backscattered signal power or read range of the tags. However, the frequency response and the losses of the tags were slightly affected. Exposure to high temperature was found to even improve the tag performance due to the positive effect of high temperature on the ink film. The combined high humidity and high temperature had the most severe effect on the tag performance. The threshold power increased, backscattered power decreased and the read range was shortened. On the whole, the results showed that field use of these tags in high, low and changing temperature conditions and high humidity conditions is possible. Use of these tags in combined high-humidity and high-temperature conditions should be carefully considered.

Antibacterial characteristics of thermal plasma spray system.

PubMed

Goudarzi, M; Saviz, Sh; Ghoranneviss, M; Salar Elahi, A

2018-03-15

The objective of this study is to investigate antibacterial characteristics of a thermal plasma spray system. For this purpose, copper powder was coated on a handmade atmospheric plasma spraying system made by the stainless steel 316 substrate, which is preheated at different temperatures before spraying. A number of deposition characteristics such as antibacterial characteristics, adhesion strength and hardness of coating, was investigated. All of the spray parameters are fixed except the substrate temperature. The chemical composition was analyzed by X-ray diffraction (XRD). A scanning electron microscopy (SEM) and back scattering electron microscopy (BSE) were used to show the coating microstructure, its thickness and also the powder micrograph. The energy dispersive X-ray spectroscopy (EDX) was used to analyze the coating particles. Hardness of the deposition was examined by Vickers tester (HV0.1). Its adhesion strength was declared by cross cut tester (TQC). In addition, the percentage of bactericidal coating was evidenced with Staphylococcus aurous and Escherichia coli bacteria. Study results show that as the substrates temperature increases, the number of splats in the shape of pancake increases, the greatness and percentage of the deposition porosity both decrease. The increment of the substrate temperature leads to more oxidation and makes thicker dendrites on the splat. The enhancement of the substrate temperature also enlarges thickness and efficiency of coating. The interesting results are that antibacterial properties of coatings against the Escherichia coli are more than Staphylococcus aurous bacteria. However the bactericidal percentage of the coatings against Staphylococcus aurous and Escherichia coli bacteria roughly does not change with increasing the substrate temperature. Furthermore, by increment of the substrate temperature, coatings with both high adhesion and hardness are obtained. Accordingly, the temperature of substrate can be an important parameter for progressing mechanical properties of the antiseptic deposition.

Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

PubMed

Chen, Tao-Hsing; Chen, Ting-You

2015-11-03

An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

Pulsed laser induced heat transfer from a phthalocyanine-based thin film to a Bi, Al-substituted DyIG substrate: photothermal demagnetization observed by magnetic circular dichroism and numerical analysis.

PubMed

Karasawa, Masanobu; Ishii, Kazuyuki

2018-05-03

We have investigated the demagnetization of a ferrimagnetic substrate, Bi, Al-substituted dysprosium iron garnet (Bi0.8Dy2.2Fe4.3Al0.7O12), based on selective pulsed laser irradiation of a molecular thin film consisting of μ-oxo-bis[hydroxyl{2,9(or 10),16(or 17),23(or 24)-tetra-tert-butylphthalocyanato}silicon] ((SiPc)2) and poly(vinylidene fluoride), and succeeded in reproducing photothermal energy transfer from a molecular thin film to an inorganic magnetic substrate in a submicrometer-order and a submicrosecond time scale using numerical analysis. After the instant temperature rise due to nanosecond pulsed laser irradiation of the (SiPc)2-based film, followed by heat transfer from the film to the neighboring magnetic substrate, demagnetization of the magnetic substrate was spectroscopically monitored by the decrease in its magnetic circular dichroism (MCD) intensity. The MCD intensity decreased with increasing pulsed laser energy, which reflects the fact that the submicrometer-order region of the substrate was demagnetized as a result of temperature rise reaching high Curie temperature. This heat transfer phenomenon resulting in the demagnetization of the magnetic substrate was numerically analyzed in a submicrometer-order and a submicrosecond time scale using the finite difference method: the demagnetized regions were calculated to be the same order of magnitude as those experimentally evaluated. These results would provide a more detailed understanding of photothermal energy transfer in organic-inorganic hybrid materials, which would be useful for developing photofunctional materials.

Preparation and Characterization of RF Sputtered BARIUM(2) SILICON(2) Titanium OXYGEN(8) Thin Films

NASA Astrophysics Data System (ADS)

Li, Yi.

Thin films of barium titanium silicate ( Ba_2Si_2TiO_8) are grown on crystalline (100) Si at substrate temperatures raging from 750 to 955^circC by the radio-frequency triode sputtering technique. The chemical composition, microstructure, physical properties, and growth conditions of the deposited films are investigated by dc and high-frequency dielectric measurements, wavelength dispersive and energy dispersive x-ray spectrometries, x-ray diffraction spectrometry, and optical and scanning electron microscopies. The results of the x-ray diffraction analysis show that the Ba_2Si_2TiO _8 films deposited at the optimum condition of substrate temperature of 845^circ C, 4 cm source-substance distance, 50 W rf power, and 1.2 times 10^ {-3} torr pressure of Ar, are highly c -axis oriented. The as-deposited films are smooth, glossy, polycrystalline films, exhibiting a bulk resistivity range of 10^6 Omegacdotcm, and an isotropic surface resistivity of 1.5 times 10^3 Omegacdot cm. The relative dielectric constant is 0.05, and the dielectric loss is lower than 1.0, in the frequency band 9 ~ 1000 MHz. The high-frequency impedance of BST films, which is typical for piezoelectric materials, gives a minimum impedance frequency of 9.0 MHz and a series resonant frequency of 9.5 MHz. Optical and SEM observations show that the film texture is dependent on the substrate conditions. The non-liquid-like grain coalescence of the Ba_2Si_2TiO _8 grains is characteristic of a strong film -substrate interaction. The grain growth kinetics obtained from "short-time" sputtering gives an initial lateral grain growth rate of 770 nm/min at 845^circ C, which decreases with the grain size. The initial film growth rate in the direction of thickness, measured from SEM micrographs, is 1.95 nm/min, and decreases with sputtering time. The activation free energy for grain growth is 359 +/- 30 KJ/mol for the initial stage, decreasing to 148 +/- 20 KJ/mol for the final stage. The variation of the grain growth rate and the activation energy with grain size is the result of a combined nucleation and growth mechanism in the initial stage of the film growth, and a coalescence -dominated growth mechanism at longer sputtering time and at higher temperature. Film orientation is sensitive to the supersaturation adjacent to the film surface, which depends on the source-substrate distance and substrate temperature. The effect of the substrate temperature on the orientation of the film is investigated over a wide temperature range using (100) and (111) Si substrates. Several orientations for the BST films, including an amorphous state, are obtained with increasing substrate temperature. This is discussed in relation to the atomic plane density and the energetics for the deposition process.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

2010-04-01

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

Defect studies of thin ZnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Vlček, M.; Čížek, J.; Procházka, I.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Mosnier, J.-P.

2014-04-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

NASA Technical Reports Server (NTRS)

Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

1992-01-01

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

NASA Astrophysics Data System (ADS)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1992-05-01

High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

Cu(In,Ga)Se2 solar cells with In2S3 buffer layer deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Kim, SeongYeon; Rana, Tanka R.; Kim, JunHo; Yun, JaeHo

2017-12-01

We report on physical vapor deposition of indium sulfide (In2S3) buffer layers and its application to Cu(In,Ga)Se2 (CIGSe) thin film solar cell. The Indium sulfide buffer layers were evaporated onto CIGSe at various substrate temperatures from room temperature (RT) to 350 °C. The effect of deposition temperature of buffer layers on the solar cell device performance were investigated by analyzing temperature dependent current-voltage ( J- V- T), external quantum efficiency (EQE) and Raman spectroscopy. The fabricated device showed the highest power conversion efficiency of 6.56% at substrate temperature of 250 °C, which is due to the decreased interface recombination. However, the roll-over in J- V curves was observed for solar cell device having buffer deposited at substrate temperature larger than 250 °C. From the measurement results, the interface defect and roll-over related degradation were found to have limitation on the performance of solar cell device.

Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation

NASA Astrophysics Data System (ADS)

Mayangsari, Tirta R.; Yusup, Luchana L.; Park, Jae-Min; Blanquet, Elisabeth; Pons, Michel; Jung, Jongwan; Lee, Won-Jun

2017-06-01

We modeled and simulated the surface reaction of silicon precursor on different surfaces by thermodynamic analysis and density functional theory calculation. We considered SiH2Cl2 and argon as the silicon precursor and the carrier gas without etchant gas. First, the equilibrium composition of both gaseous and solid species was analyzed as a function of process temperature. SiCl4 is the dominant gaseous species at below 750 °C, and SiCl2 and HCl are dominant at higher temperatures, and the yield of silicon decreases with increasing temperature over 700 °C due to the etching of silicon by HCl. The yield of silicon for SiO2 substrate is lower than that for silicon substrate, especially at 1000 °C or higher. Zero deposition yield and the etching of SiO2 substrate at higher temperatures leads to selective growth on silicon substrate. Next, the adsorption and the reaction of silicon precursor was simulated on H-terminated silicon (100) substrate and on OH-terminated β-cristobalite substrate. The adsorption and reaction of a SiH2Cl2 molecule are spontaneous for both Si and SiO2 substrates. However, the energy barrier for reaction is very small (6×10-4 eV) for Si substrate, whereas the energy barrier is high (0.33 eV) for SiO2 substrate. This makes the differences in growth rate, which also supports the experimental results in literature.

Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

NASA Astrophysics Data System (ADS)

Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

2015-09-01

The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon

NASA Astrophysics Data System (ADS)

Ayouchi, R.; Martin, F.; Leinen, D.; Ramos-Barrado, J. R.

2003-01-01

Structural, morphological, optical and electrical properties of ZnO thin films prepared by chemical spray pyrolysis from zinc acetate (Zn(CH 3COO) 2 2H 2O) aqueous solutions, on polished Si(1 0 0), and fused silica substrates for optical characterization, have been studied in terms of deposition time and substrate temperature. The growth of the films present three regimes depending on the substrate temperature, with increasing, constant and decreasing growth rates at lower, middle, and higher-temperature ranges, respectively. Growth rate higher than 15 nm min -1 can be achieved at Ts=543 K. ZnO film morphological and electrical properties have been related to these growth regimes. The films have been characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.

Metabolic depression during warm torpor in the Golden spiny mouse (Acomys russatus) does not affect mitochondrial respiration and hydrogen peroxide release.

PubMed

Grimpo, Kirsten; Kutschke, Maria; Kastl, Anja; Meyer, Carola W; Heldmaier, Gerhard; Exner, Cornelia; Jastroch, Martin

2014-01-01

Small mammals actively decrease metabolism during daily torpor and hibernation to save energy. Recently, depression of mitochondrial substrate oxidation in isolated liver mitochondria was observed and associated to hypothermic/hypometabolic states in Djungarian hamsters, mice and hibernators. We aimed to clarify whether hypothermia or hypometabolism causes mitochondrial depression during torpor by studying the Golden spiny mouse (Acomys russatus), a desert rodent which performs daily torpor at high ambient temperatures of 32°C. Notably, metabolic rate but not body temperature is significantly decreased under these conditions. In isolated liver, heart, skeletal muscle or kidney mitochondria we found no depression of respiration. Moderate cold exposure lowered torpor body temperature but had minor effects on minimal metabolic rate in torpor. Neither decreased body temperature nor metabolic rate impacted mitochondrial respiration. Measurements of mitochondrial proton leak kinetics and determination of P/O ratio revealed no differences in mitochondrial efficiency. Hydrogen peroxide release from mitochondria was not affected. We conclude that interspecies differences of mitochondrial depression during torpor do not support a general relationship between mitochondrial respiration, body temperature and metabolic rate. In Golden spiny mice, reduction of metabolic rate at mild temperatures is not triggered by depression of substrate oxidation as found in liver mitochondria from other cold-exposed rodents. © 2013.

Zinc coated sheet steel for press hardening

NASA Astrophysics Data System (ADS)

Ghanbari, Zahra N.

Galvanized steels are of interest to enhance corrosion resistance of press-hardened steels, but concerns related to liquid metal embrittlement have been raised. The objective of this study was to assess the soak time and temperature conditions relevant to the hot-stamping process during which Zn penetration did or did not occur in galvanized 22MnB5 press-hardening steel. A GleebleRTM 3500 was used to heat treat samples using hold times and temperatures similar to those used in industrial hot-stamping. Deformation at both elevated temperature and room temperature were conducted to assess the coating and substrate behavior related to forming (at high temperature) and service (at room temperature). The extent of alloying between the coating and substrate was assessed on undeformed samples heat treated under similar conditions to the deformed samples. The coating transitioned from an α + Gamma1 composition to an α (bcc Fe-Zn) phase with increased soak time. This transition likely corresponded to a decrease in availability of Zn-rich liquid in the coating during elevated temperature deformation. Penetration of Zn into the substrate sheet in the undeformed condition was not observed for any of the processing conditions examined. The number and depth of cracks in the coating and substrate steel was also measured in the hot-ductility samples. The number of cracks appeared to increase, while the depth of cracks appeared to decrease, with increasing soak time and increasing soak temperature. The crack depth appeared to be minimized in the sample soaked at the highest soak temperature (900 °C) for intermediate and extended soak times (300 s or 600 s). Zn penetration into the substrate steel was observed in the hot-ductility samples soaked at each hold temperature for the shortest soak time (10 s) before being deformed at elevated temperature. Reduction of area and elongation measurements showed that the coated sample soaked at the highest temperature and longest soak time maintained the highest ductility when compared to the uncoated sample processed under the sample conditions. Fractography of the hot-ductility samples showed features associated with increased ductility with increased soak time for all soak temperatures. Heat treatments (without elevated temperature deformation) and subsequent room temperature deformation were conducted to investigate the "in-service" behavior of 22MnB5. The uncoated and coated specimens deformed at room temperature showed similar ultimate tensile strength and ductility values. The only notable differences in the room temperature mechanical behavior of uncoated and coated samples processed under the same conditions were a result of differences in the substrate microstructure. All samples appeared to have ductile fracture features; features characteristic of liquid metal embrittlement were not observed.

Effects of growth temperatures on the physical properties of Cu2ZnSnS4 thin films deposited through spray pyrolysis for solar cell applications

NASA Astrophysics Data System (ADS)

Fadavieslam, M. R.; Keshavarz, S.

2018-02-01

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 °C at a step of 50 °C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 °C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 × 1017 to 2.36 × 1019 cm-3, Hall mobility increased from 30.96 to 68.52 cm2/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 × 10-3 Ωcm. Hall effect analysis indicated that the films exhibited p-type conductivity.

Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Nisha, E-mail: prakasnisha@gmail.com; Barvat, Arun; Anand, Kritika

2016-05-23

The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaNmore » films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.« less

Water Drop Evaporation on Mushroom-like Superhydrophobic Surfaces: Temperature Effects.

PubMed

do Nascimento, Rodney Marcelo; Cottin-Bizonne, Cécile; Pirat, Christophe; Ramos, Stella M M

2016-03-01

We report on experiments of drop evaporation on heated superhydrophobic surfaces decorated with micrometer-sized mushroom-like pillars. We analyze the influence of two parameters on the evaporation dynamics: the solid-liquid fraction and the substrate temperature, ranging between 30 and 80 °C. In the different configurations investigated, the drop evaporation appears to be controlled by the contact line dynamics (pinned or moving). The experimental results show that (i) in the pinned regime, the depinning angles increase with decreasing contact fraction and the substrate heating promotes the contact line depinning and (ii) in the moving regime, the droplet motion is described by periodic stick-slip events and contact-angle oscillations. These features are highly smoothed at the highest temperatures, with two possible mechanisms suggested to explain such a behavior, a reduction in the elasticity of the triple line and a decrease in the depinning energy barriers. For all surfaces, the observed remarkable stability of the "fakir" state to the temperature is attributed to the re-entrant micropillar curvature that prevents surface imbibition.

[Preparation and Performance of Ultrafast γ-CuI Scintillation Conversion Screen].

PubMed

Xia, Ming; Gu, Mu; Liu, Xiao-lin; Liu, Bo; Huang, Shi-ming; Ni, Chen

2015-04-01

Micro-columnar structured γ-CuI scintillation conversion screen with columnar diameter in the micrometer and thickness about 17 µm were prepared by thermal evaporation method on quartz substrates with different temperatures. X-ray excited luminescence spectra of the screens show two peaks located at 430 nm and near 700 nm, which correspond to the fast and slow emission components, respectively. The fast one dominated. The intensity of 430 nm peak decreased as the substrate temperature rose from 170 °C to 210 °C. At the same time the intensity of 700 nm band increased. The changes may be attributed to the iodine loss from screen caused by the substrate temperature. The phenomenon of iodine loss was observed by the Rutherford backscattering experiment. The crystal structure of the screens presents (111) preferred orientation, which is independent of the substrate temperature. As the temperature rose to 210 °C, two weak additional peaks of (220) and (420) γ-CuI crystal planes in X-ray diffraction patterns appeared due to the increase in kinetic energy of CuI molecules. The scanning electron microscopy images of the screens showed that the columnar structure was improved when the substrate temperature increased from 170 °C to 190 °C, but it would be degenerated when the temperature continued to rise to 210 °C because of the surface and bulk diffusion effects of the depositing molecules. Finally, the spatial resolution of the γ-CuI scintillation screens was measured by knife-edge method, and they are 4.5, 7.2 and 5.6lp · mm(-1) for the screens prepared at the substrates temperatures of 170, 190 and 210 °C, respectively. The result shows that micro-column structure could improve the spatial resolution of γ-CuI scintillation screen.

The influence of dietary iodine and enviromental temperature on the activity of mitochondria in liver and kidney.

PubMed

Chaiyabutr, N; Jakobsen, P E

1978-08-01

It was found that both effect of temperatures and diets influence metabolic changes in rabbits. In animals fed basal and PTU diets (propyl-thiouracil diets) at 34 degrees C for 4 weeks the metabolic response showed a marked reduction in feed intake and body weight, compared with animals fed at normal temperatures. In the animals fed the iodine diet, there was an increase in daily food consumption and weekly body weight gain at 34 degrees C. This indicates a rise in metabolic activity in this case. Studying the activity of kidney mitochondria of the three groups of animals using succinate as a substrate revealed that the P/O ratio tends to decrease in animals kept at 6 degrees C while the RCR value was not altered by changing conditions or produced by the different diets. At the temperature of 6 degrees C both the P/O ratios and the RCR values of liver mitochondria using succinate as a substrate decreased in the group of rabbits fed the basal and iodine diets, but were not significantly different in the group fed the PTU diet. In the experiment on kidney mitochondrial activity using alpha-ketoglutarate as a substrate it was found that both the P/O ratios and the RCR values from animals fed basal and PTU diets at 6 degrees C decreased slightly as compared with animals fed at 20 degrees C and 34 degrees C. In liver mitochondria, using alpha-ketoglutarate as a substrate a significant decrease in the P/O ratio and the RCR value was found for both rabbits fed the basal and the iodine diets at 6 degrees C. In the group of rabbits fed the PTU diet, the P/O ratio also decreased but the fall was not significant. These results suggested that the activity of succinate dehydrogenase in liver mitochondria increases in animals fed basal and iodine diets at 6 degrees C. The enzyme dehydrogenase involved in oxidation of alpha-ketoglutarate which is localized in the outer membrane of mitochondria seems to be affected by different temperatures and diets as compared with succinate dehydrogenase localized in the matrix. The kidney mitochondria activity is less sensitive than that of liver mitochondria. Mitochondrial respiration and phosphorylation due to the tightness of their coupling may respond differently depending on the degree of thyroid activity.

The effect of substrate, ADP and uncoupler on the respiration of tomato pollen during incubation in vitro at moderately high temperature.

PubMed

Karapanos, I C; Akoumianakis, K A; Olympios, C M; Passam, H C

2009-09-01

Pollen of tomato cv. Supermarmande was collected from greenhouse-grown plants at various intervals throughout the year and arbitrarily classified as of high, medium or low respiratory activity on the basis of CO(2) production during 8 h incubation in vitro at 30 degrees C, a temperature that is considered to be moderately high for tomato fruit set. After an initial burst of respiration during the first stage of hydration at 30 degrees C (>1 h), the respiration rate of pollen of all three categories declined, the decrease being greater in the lots with a low or medium respiratory activity than in the high category. During hydration (10 min after the start of incubation), the addition of succinate or reduced beta-nicotinamide adenine dinucleotide (NADH) to the substrate increased the respiratory rate of slowly-respiring pollen more than that of fast-respiring pollen, but carbonyl cyanide 3-chlorophenylhydrazone (CCCP) and adenosine 5'-diphosphate (ADP) had less effect. After 1-4 h incubation, the respiration rate of the slow- or medium-respiring pollen lots had decreased, but was stimulated by succinate or NADH, and to a lesser degree by ADP. By 7 h, the respiration rate of all pollen lots had declined and was stimulated less by substrate, ADP or CCCP. The oxidation of NADH by tomato pollen contrasts with the failure of other pollen species to utilize this substrate; moreover, a synergistic effect of NADH and succinate was consistently observed. We conclude that the decline in respiration during incubation for up to 4 h at 30 degrees C may reflect a lack of respiratory substrate. After 7 h, however, the decreased response to substrate indicates a loss of mitochondrial integrity or an accumulation of metabolic inhibitors. It is concluded that at 30 degrees C (a moderately high temperature for tomato pollen), the initially high rate of respiration leads to exhaustion of the endogenous respiratory substrates (particularly in pollen with low to medium respiratory activity), but subsequently to ageing and a loss of mitochondrial activity.

LaAlO3: A substrate material with unusual ferroelastic properties

NASA Astrophysics Data System (ADS)

Kustov, S.; Liubimova, Iu.; Salje, E. K. H.

2018-01-01

Twin boundary dynamics in LaAlO3 is associated with non-linear anelasticity. Ultrasonic studies of non-linear twin boundary dynamics between 80 and 520 K show that cooling substrates from temperatures near the ferroelastic transition at 813 K generate three characteristic thermal regimes with different non-linear dynamics. Twin boundaries are initially highly mobile. Anelastic strain amplitudes versus stress are power law distributed with an exponent of 2.5. No de-pinning was found down to elastic strain amplitudes of ɛ0 ˜ 10-7. The power law is gradually replaced between 370 K and 280 K by few large singularities (jerks) due to massive rearrangements of the domain structure for ɛ0 larger than ca. 5 × 10-5. At lower temperatures, the domain structure is pinned with well-defined thresholds for de-pinning. The de-pinning is not accompanied by global rearrangements of twin patterns below room temperature. Unexpectedly, the low-temperature critical de-pinning strain amplitude decreases with decreasing temperature, which may indicate an additional, so far unknown phase transition near 40 K.

D-malate production by permeabilized Pseudomonas pseudoalcaligenes; optimization of conversion and biocatalyst productivity.

PubMed

Michielsen, M J; Frielink, C; Wijffels, R H; Tramper, J; Beeftink, H H

2000-04-14

For the development of a continuous process for the production of solid D-malate from a Ca-maleate suspension by permeabilized Pseudomonas pseudoalcaligenes, it is important to understand the effect of appropriate process parameters on the stability and activity of the biocatalyst. Previously, we quantified the effect of product (D-malate2 -) concentration on both the first-order biocatalyst inactivation rate and on the biocatalytic conversion rate. The effects of the remaining process parameters (ionic strength, and substrate and Ca2 + concentration) on biocatalyst activity are reported here. At (common) ionic strengths below 2 M, biocatalyst activity was unaffected. At high substrate concentrations, inhibition occurred. Ca2+ concentration did not affect biocatalyst activity. The kinetic parameters (both for conversion and inactivation) were determined as a function of temperature by fitting the complete kinetic model, featuring substrate inhibition, competitive product inhibition and first-order irreversible biocatalyst inactivation, at different temperatures simultaneously through three extended data sets of substrate concentration versus time. Temperature affected both the conversion and inactivation parameters. The final model was used to calculate the substrate and biocatalyst costs per mmol of product in a continuous system with biocatalyst replenishment and biocatalyst recycling. Despite the effect of temperature on each kinetic parameter separately, the overall effect of temperature on the costs was found to be negligible (between 293 and 308 K). Within pertinent ranges, the sum of the substrate and biocatalyst costs per mmol of product was calculated to decrease with the influent substrate concentration and the residence time. The sum of the costs showed a minimum as a function of the influent biocatalyst concentration.

Why we need to look beyond the glass transition temperature to characterize the dynamics of thin supported polymer films.

PubMed

Zhang, Wengang; Douglas, Jack F; Starr, Francis W

2018-05-29

There is significant variation in the reported magnitude and even the sign of [Formula: see text] shifts in thin polymer films with nominally the same chemistry, film thickness, and supporting substrate. The implicit assumption is that methods used to estimate [Formula: see text] in bulk materials are relevant for inferring dynamic changes in thin films. To test the validity of this assumption, we perform molecular simulations of a coarse-grained polymer melt supported on an attractive substrate. As observed in many experiments, we find that [Formula: see text] based on thermodynamic criteria (temperature dependence of film height or enthalpy) decreases with decreasing film thickness, regardless of the polymer-substrate interaction strength ε. In contrast, we find that [Formula: see text] based on a dynamic criterion (relaxation of the dynamic structure factor) also decreases with decreasing thickness when ε is relatively weak, but [Formula: see text] increases when ε exceeds the polymer-polymer interaction strength. We show that these qualitatively different trends in [Formula: see text] reflect differing sensitivities to the mobility gradient across the film. Apparently, the slowly relaxing polymer segments in the substrate region make the largest contribution to the shift of [Formula: see text] in the dynamic measurement, but this part of the film contributes less to the thermodynamic estimate of [Formula: see text] Our results emphasize the limitations of using [Formula: see text] to infer changes in the dynamics of polymer thin films. However, we show that the thermodynamic and dynamic estimates of [Formula: see text] can be combined to predict local changes in [Formula: see text] near the substrate, providing a simple method to infer information about the mobility gradient.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oruc, Feyza B.; Aygun, Levent E.; Donmez, Inci

ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250 °C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80 °C; I{sub on}/I{sub off} ratio is extracted as 7.8 × 10{sup 9} and subthreshold slope is extracted as 0.116 V/dec.more » Flexible ZnO TFT devices are also fabricated using films grown at 80 °C. I{sub D}–V{sub GS} characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias.« less

Decreasing the Effective Thermal Conductivity in Glass Supported Thermoelectric Layers.

PubMed

Bethke, Kevin; Andrei, Virgil; Rademann, Klaus

2016-01-01

As thermoelectric devices begin to make their way into commercial applications, the emphasis is put on decreasing the thermal conductivity. In this purely theoretical study, finite element analysis is used to determine the effect of a supporting material on the thermal conductivity of a thermoelectric module. The simulations illustrate the heat transfer along a sample, consisting from Cu, Cu2O and PbTe thermoelectric layers on a 1 mm thick Pyrex glass substrate. The influence of two different types of heating, at a constant temperature and at a constant heat flux, is also investigated. It is revealed that the presence of a supporting material plays an important role on lowering the effective thermal conductivity of the layer-substrate ensemble. By using thinner thermoelectric layers the effective thermal conductivity is further reduced, almost down to the value of the glass substrate. As a result, the temperature gradient becomes steeper for a fixed heating temperature, which allows the production of devices with improved performance under certain conditions. Based on the simulation results, we also propose a model for a robust thin film thermoelectric device. With this suggestion, we invite the thermoelectric community to prove the applicability of the presented concept for practical purposes.

Decreasing the Effective Thermal Conductivity in Glass Supported Thermoelectric Layers

PubMed Central

Bethke, Kevin; Andrei, Virgil; Rademann, Klaus

2016-01-01

As thermoelectric devices begin to make their way into commercial applications, the emphasis is put on decreasing the thermal conductivity. In this purely theoretical study, finite element analysis is used to determine the effect of a supporting material on the thermal conductivity of a thermoelectric module. The simulations illustrate the heat transfer along a sample, consisting from Cu, Cu2O and PbTe thermoelectric layers on a 1 mm thick Pyrex glass substrate. The influence of two different types of heating, at a constant temperature and at a constant heat flux, is also investigated. It is revealed that the presence of a supporting material plays an important role on lowering the effective thermal conductivity of the layer-substrate ensemble. By using thinner thermoelectric layers the effective thermal conductivity is further reduced, almost down to the value of the glass substrate. As a result, the temperature gradient becomes steeper for a fixed heating temperature, which allows the production of devices with improved performance under certain conditions. Based on the simulation results, we also propose a model for a robust thin film thermoelectric device. With this suggestion, we invite the thermoelectric community to prove the applicability of the presented concept for practical purposes. PMID:26982458

Wetting Transition of Nonpolar Neutral Molecule System on a Neutral and Atomic Length Scale Roughness Substrate

NASA Astrophysics Data System (ADS)

Zhou, Shiqi

2018-03-01

One recently proposed new method for accurately determining wetting temperature is applied to the wetting transition occurring in a single component nonpolar neutral molecule system near a neutral planar substrate with roughness produced by cosinusoidal modulation(s). New observations are summarized into five points: (i) for a planar substrate superimposed with one cosinusoidal modulation, with increasing of the periodicity length or the surface attraction force field, or decreasing of the amplitude, wetting temperature T_W drops accordingly and the three parameters show multiplication effect; moreover, both the periodicity length and amplitude effect curves display pole phenomena and saturation phenomena, and the T_W saturation occurs at small (for case of large amplitude) or large (for case of small amplitude) periodicity length side, respectively. (ii) In the case of the planar substrate superimposed with two cosinusoidal modulations with equal periodicity length, the initial phase difference is critical issue that influences the T_W, which decreases with the initial phase difference. (iii) In the case of the planar substrate superimposed with two cosinusoidal modulations with zero phase difference, change of the T_W with one periodicity length under the condition of another periodicity length unchanged is non-monotonous. (iv) When the parameters are chosen such that the T_W draws ever closer to the bulk critical temperature, wetting transition on the roughness substrate eventually does not occur. (v) The present microscopic calculation challenges traditional macroscopic theory by confirming that the atomic length scale roughness always renders the surface less hydrophilic and whereas the mesoscopical roughness renders the surface more hydrophilic. All of these observations summarized can be reasonably explained by the relative strength of the attraction actually enjoyed by the surface gas molecules to the attraction the gas molecules can get when in bulk.

Substrate Integrated Waveguide (SIW)-Based Wireless Temperature Sensor for Harsh Environments.

PubMed

Tan, Qiulin; Guo, Yanjie; Zhang, Lei; Lu, Fei; Dong, Helei; Xiong, Jijun

2018-05-03

This paper presents a new wireless sensor structure based on a substrate integrated circular waveguide (SICW) for the temperature test in harsh environments. The sensor substrate material is 99% alumina ceramic, and the SICW structure is composed of upper and lower metal plates and a series of metal cylindrical sidewall vias. A rectangular aperture antenna integrated on the surface of the SICW resonator is used for electromagnetic wave transmission between the sensor and the external antenna. The resonant frequency of the temperature sensor decreases when the temperature increases, because the relative permittivity of the alumina ceramic increases with temperature. The temperature sensor presented in this paper was tested four times at a range of 30⁻1200 °C, and a broad band coplanar waveguide (CPW)-fed antenna was used as an interrogation antenna during the test process. The resonant frequency changed from 2.371 to 2.141 GHz as the temperature varied from 30 to 1200 °C, leading to a sensitivity of 0.197 MHz/°C. The quality factor of the sensor changed from 3444.6 to 35.028 when the temperature varied from 30 to 1000 °C.

Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

2016-11-01

For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

Radiation and Temperature Hard Multi-Pixel Avalanche Photodiodes

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)

2017-01-01

The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

Responses of caddisfly larvae (Brachycentrus spp. ) to temperature, food availability and current velocity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallepp, G.W.

1977-07-01

Larvae of the stream caddisflies, Brachycentrus americanus and Brachycentrus occidentalis, were studied in eight simulated stream channels to determine their behavioral responses to temperature, food availability (brine shrimp) and current velocity. For both species, filtering, withdrawn and case-building were the primary behavior patterns of larvae that had attached their cases to the substrate. Most larvae not attached to the substrate were crawling or holding. As temperatures increased above 8 C, B. occidentalis larvae filtered more frequantly; but above 20 C the percentage of larvae filtering steadily decreased and the percentage withdrawn increased dramatically with increasing temperature. Percentages of larvae case-buildingmore » and unattached generally decreased over the range of 4 to 27 C. Despite this decrease in case-building, B. occidentalis larvae generally grew faster as temperature increased from 4 to 16 C. Behavior of B. americanus as a function of temperature was similar to behavior of B. occidentalis. Both species responded to decreased ration by increasing the percentage of time filtering. Although many larvae were unattached and probably grazing in Lawrence Creek, few larvae were unattached in the laboratory, even at the lowest ration (1.2 percent of the body weight per day). Growth and case-building activity of B. americanus larvae were directly related to ration. Over the range of current velocities of 7 to 26 cm/sec, behavior of B. occidentalis changed little. At 5 cm/sec fewer larvae filtered and more were unattached; this suggested a threshold response to current velocity. Increasing temperatures from 10 to 20 C caused the percentage withdrawn at low velocities to increase; however, this trend was hardly noticeable at velocities above 10 cm/sec. In these tests, Brachycentrus were more responsive to temperature and food availability than to current velocity.« less

Soil warming increases metabolic quotients of soil microorganisms without changes in temperature sensitivity of soil respiration

NASA Astrophysics Data System (ADS)

Marañón-Jiménez, Sara; Soong, Jenniffer L.; Leblans, Niki I. W.; Sigurdsson, Bjarni D.; Dauwe, Steven; Fransen, Erik; Janssens, Ivan A.

2017-04-01

Increasing temperatures can accelerate soil organic matter (SOM) decomposition and release large amounts of CO2 to the atmosphere, potentially inducing climate change feedbacks. Alterations to the temperature sensitivity and metabolic pathways of soil microorganisms in response to soil warming can play a key role in these soil carbon (C) losses. Here, we present results of an incubation experiment using soils from a geothermal gradient in Iceland that have been subjected to different intensities of soil warming (+0, +1, +3, +5, +10 and +20 °C above ambient) over seven years. We hypothesized that 7 years of soil warming would led to a depletion of labile organic substrates, with a subsequent decrease of the "apparent" temperature sensitivity of soil respiration. Associated to this C limitation and more sub-optimal conditions for microbial growth, we also hypothesized increased microbial metabolic quotients (soil respiration per unit of microbial biomass), which is associated with increases in the relative amount of C invested into catabolic pathways along the warming gradient. Soil respiration and basal respiration rates decreased with soil warming intensity, in parallel with a decline in soil C availability. Contrasting to our first hypothesis, we did not detect changes in the temperature sensitivity of soil respiration with soil warming or on the availability of nutrients and of labile C substrates at the time of incubation. However, in agreement to our second hypothesis, microbial metabolic quotients (soil respiration per unit of microbial biomass) increased at warmer temperatures, while the C retained in biomass decreased as substrate became limiting. Long-term (7 years) temperature increases thus triggered a change in the metabolic functioning of the soil microbial communities towards increasing energy costs for maintenance or resource acquisition, thereby lowering the capacity of C retention and stabilization of warmed soils. These results highlight the need to incorporate the potential changes in microbial physiological functioning into models, in order to accurately predict future changes in soil C stocks in response to global warming.

Triangular Graphene Grain Growth on Cube-Textured Cu Substrates

DTIC Science & Technology

2011-01-01

rate of CuOx decreases with decreasing H 2 partial pressure. [ 32 ] According to the Cu-O phase diagram, [ 33 ] the eutectic temperature of Cu-CuO and...accelerating voltage of 2 KeV. The electron backscatter diffraction patterns (EBSP) were used to examine recrystallization and grain orientation of

Changes in the temperature sensitivity of SOM decomposition with grassland succession: implications for soil C sequestration.

PubMed

Nianpeng, He; Ruomeng, Wang; Yang, Gao; Jingzhong, Dai; Xuefa, Wen; Guirui, Yu

2013-12-01

Understanding the temperature sensitivity (Q 10) of soil organic matter (SOM) decomposition is important for predicting soil carbon (C) sequestration in terrestrial ecosystems under warming scenarios. Whether Q 10 varies predictably with ecosystem succession and the ways in which the stoichiometry of input SOM influences Q 10 remain largely unknown. We investigate these issues using a grassland succession series from free-grazing to 31-year grazing-exclusion grasslands in Inner Mongolia, and an incubation experiment performed at six temperatures (0, 5, 10, 15, 20, and 25°C) and with four substrates: control (CK), glucose (GLU), mixed grass leaf (GRA), and Medicago falcata leaf (MED). The results showed that basal soil respiration (20°C) and microbial biomass C (MBC) logarithmically decreased with grassland succession. Q 10 decreased logarithmically from 1.43 in free-grazing grasslands to 1.22 in 31-year grazing-exclusion grasslands. Q 10 increased significantly with the addition of substrates, and the Q 10 levels increased with increase in N:C ratios of substrate. Moreover, accumulated C mineralization was controlled by the N:C ratio of newly input SOM and by incubation temperature. Changes in Q 10 with grassland ecosystem succession are controlled by the stoichiometry of newly input SOM, MBC, and SOM quality, and the combined effects of which could partially explain the mechanisms underlying soil C sequestration in the long-term grazing-exclusion grasslands in Inner Mongolia, China. The findings highlight the effect of substrate stoichiometry on Q 10 which requires further study.

Influence of temperature on the CuIn1-xGaxSe2films deposited by picosecond laser ablation

NASA Astrophysics Data System (ADS)

Sima, Cornelia; Toma, Ovidiu

2017-12-01

The goal of this study is to investigate the influence of the deposition temperature on the CuIn1-xGaxSe2 (CIGS-copper indium gallium diselenide) film characteristics deposited by picosecond laser ablation method using a Nd:YVO4 laser (8 ps, 0.2 W, 50 kHz, 532 nm; 5.7 mJ/cm2; 36 × 107 pulses). The films were deposited starting from a CuIn0.7Ga0.3Se2 target, in vacuum at 3 × 10-5 Torr for 2 h, at room temperature (RT) and 100/200/300/400 °C substrate temperature; as substrate, optical glass was used. Structure, film morphology, composition and optical properties were investigated by X ray diffraction, scanning electron microscopy (energy dispersive X ray spectroscopy), spectroscopic ellipsometry and optical spectrophotometry. CIGS crystalline films have the dominant peak corresponding to (112) direction more pronounced starting with 200 °C deposition temperature. The thickness gradually decreased with temperature increasing, being 1.44 μm at RT and 0.72 μm at 400 °C; atomic composition in the case of In, Ga, Se increased after annealing, while in the case of Cu it decreased comparing with RT; refractive indices exhibited a short decreasing tendency by increasing the deposition temperature, while the optical band gap values for CuIn0.7Ga0.3Se2 laser ablated thin films increased.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Surface diffusion of Si, Ge and C adatoms on Si (001) substrate studied by the molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Chen, Zhi-Hui; Yu, Zhong-Yuan; Lu, Peng-Fei; Liu, Yu-Min

2009-10-01

Depositions of Si, Ge and C atoms onto a preliminary Si (001) substrate at different temperatures are investigated by using the molecular dynamics method. The mechanism of atomic self-assembling occurring locally on the flat terraces between steps is suggested. Diffusion and arrangement patterns of adatoms at different temperatures are observed. At 900 K, the deposited atoms are more likely to form dimers in the perpendicular [110] direction due to the more favourable movement along the perpendicular [110] direction. C adatoms are more likely to break or reconstruct the dimers on the substrate surface and have larger diffusion distances than Ge and Si adatoms. Exchange between C adatoms and substrate atoms are obvious and the epitaxial thickness is small. Total potential energies of adatoms and substrate atoms involved in the simulation cell are computed. When a newly arrived adatom reaches the stable position, the potential energy of the system will decrease and the curves turns into a ladder-like shape. It is found that C adatoms can lead to more reduction of the system energy and the potential energy of the system will increase as temperature increases.

Optical and electrical properties of GaN-based light emitting diodes grown on micro- and nano-scale patterned Si substrate

NASA Astrophysics Data System (ADS)

Chiu, Ching-Hsueh; Lin, Chien-Chung; Deng, Dongmei; Kuo, Hao-Chung; Lau, Kei-May

2011-10-01

We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on Micro and Nano-scale Patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy (TEM) images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nanoscale epitaxial lateral overgrowth (NELOG). The plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous substrates. From temperature dependent photoluminescence (PL) and low temperature time-resolved photoluminescence (TRPL) measurement, NPLEDs has better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibits smaller electroluminescence (EL) peak wavelength blue shift, lower reverse leakage current and decreases efficiency droop compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.

Temperature dependent dielectric behavior of sol-gel grown Y0.95Ca0.05MnO3/Si junction

NASA Astrophysics Data System (ADS)

Dhruv, Davit; Joshi, Zalak; Solanki, Sapana; Sagapariya, Khushal; Makwana, Pratima; Kansara, S. B.; Joshi, A. D.; Pandya, D. D.; Solanki, P. S.; Shah, N. A.

2017-05-01

We have successfully fabricated divalent doped Y0.95Ca0.05MnO3 film on (100) single crystalline n-type Si substrate by spin coating assisted chemical solution deposition technique. The X-ray diffraction (XRD) pattern of thin film depicts that the film has (h00) directional growth on substrate. Thin film possesses -1.4% compressive strain at the interface level and thin film thickness is found to be ˜ 78nm. Dielectric property of film has been studied by Agilent LCR meter from 100Hz to 2MHz applied field frequency at temperatures 150 to 300K. Real dielectric permittivity decreases and imaginary dielectric permittivity increases with increasing applied frequency. Furthermore, at low temperatures, higher dielectric is observed in all the frequency range studied and it decreases with increasing temperature due to thermal excitation induced increased charge carrier movements across the film lattice. The relaxation mechanism of Y0.95Ca0.05MnO3 film has been understood through cole-cole plots.

Characterization of microbial community structure during continuous anaerobic digestion of straw and cow manure

PubMed Central

Sun, Li; Pope, Phillip B; Eijsink, Vincent G H; Schnürer, Anna

2015-01-01

Responses of bacterial and archaeal communities to the addition of straw during anaerobic digestion of manure at different temperatures (37°C, 44°C and 52°C) were investigated using five laboratory-scale semi-continuous stirred tank reactors. The results revealed that including straw as co-substrate decreased the species richness for bacteria, whereas increasing the operating temperature decreased the species richness for both archaea and bacteria, and also the evenness of the bacteria. Taxonomic classifications of the archaeal community showed that Methanobrevibacter dominated in the manure samples, while Methanosarcina dominated in all digesters regardless of substrate. Increase of the operating temperature to 52°C led to increased relative abundance of Methanoculleus and Methanobacterium. Among the bacteria, the phyla Firmicutes and Bacteroidetes dominated within all samples. Compared with manure itself, digestion of manure resulted in a higher abundance of an uncultured class WWE1 and lower abundance of Bacilli. Adding straw to the digesters increased the level of Bacteroidia, while increasing the operating temperature decreased the level of this class and instead increased the relative abundance of an uncultured genus affiliated to order MBA08 (Clostridia). A considerable fraction of bacterial sequences could not be allocated to genus level, indicating that novel phylotypes are resident in these communities. PMID:26152665

The Effect of Carrier Properties on the Ballistic Processing of Sn-0.7 Cu Thick Films

NASA Astrophysics Data System (ADS)

Hille, David M.

The need for metallic films has increased since the creation of electronic components. The continued miniaturization of systems and components has led to a greater demand for both thick and thin films, especially in the technology field. Computers, hand held devices, and solar cells are a few of the multitudes of uses for these films. This thesis investigates a novel additive manufacturing process known as Ballistic Manufacturing (BM), invented at the Advanced Materials Processing Lab (AMPL) at San Diego State University. Lead free solder (Tin (Sn)-0.7%Copper (Cu)) was chosen as the testing material due to its low melting temperature. The effects of varying thermal conductivity via the change in carrier material type, the effect of raising substrate temperature, and surface finish differences were investigated. An increase in thermal conductivity resulted in an increase in film thickness and decrease in cell size. As substrate temperature was raised, film thickness decreased, while cell size decreased. Surface finish provided a proof of concept to the transfer of substrate features to the resultant film surface. Evaluation of dendritic microstructures led to relative cooling rates reflective of changes in parameters. The mechanical behavior was also investigated using tensile tests to determine stress-stain relationships and measure elastic modulus. With the current work of this thesis, and previous work by Cavero and Stewart, Ballistic Manufacturing is proven to be an alternative method in the production of metallic films.

Microstructure evolution of Al-doped zinc oxide films prepared by in-line reactive mid-frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Hong, R. J.; Jiang, X.

2006-07-01

Aluminium-doped zinc oxide (ZnO:Al or AZO) thin films were deposited on glass substrates by reactive mid-frequency (MF) magnetron sputtering from Zn/Al metallic targets. Strong (002) preferred orientation was detected by X-ray diffraction (XRD). It was observed by plan-view transmission electron microscopy (TEM) that an AZO film deposited at low substrate temperature was composed of irregular large grains; but the film prepared at high temperature was composed of moderate sized grains with a regular shape. A secondary phase of ZnO2 was also observed for the film deposited at low substrate temperature. The cross-sectional TEM study of the AZO film showed that prior to the well-aligned columnar growth an initial interfacial zone with nano crystallites were formed. The nano crystallites formed initially with a large tilt angle normal to the substrate surface and during the growth of the transition zone, the tilt angle decreased until it vanished. The evolution of the film structure is discussed in terms of evolutionary selection model and the dynamic deposition process.

Ten Ghz YBa2Cu3O(7-Delta) Superconducting Ring Resonators on NdGaO3 Substrates

NASA Technical Reports Server (NTRS)

To, H. Y.; Valco, G. J.; Bhasin, K. B.

1993-01-01

YBa2Cu3O(7-delta) thin films were formed on NdGaO3 substrates by laser ablation. Critical temperatures greater than 89 K and critical current densities exceeding 2 x 10(exp 8) Acm(sub -2) at 77 K were obtained. The microwave performance of films patterned into microstrip ring resonators with gold ground planes was measured. An unloaded quality factor six times larger than that of a gold resonator of identical geometry was achieved. The unloaded quality factor decreased below 70 K for both the superconducting and gold resonators due to increasing dielectric losses in the substrate. The temperature dependence of the loss tangent of NdGaO3 was extracted from the measurements.

Some aspects of pulsed laser deposition of Si nanocrystalline films

NASA Astrophysics Data System (ADS)

Polyakov, B.; Petruhins, A.; Butikova, J.; Kuzmin, A.; Tale, I.

2009-11-01

Nanocrystalline silicon films were deposited by a picosecond laser ablation on different substrates in vacuum at room temperature. A nanocrystalline structure of the films was evidenced by atomic force microscopy (AFM), optical and Raman spectroscopies. A blue shift of the absorption edge was observed in optical absorption spectra, and a decrease of the optical phonon energy at the Brillouin zone centre was detected by Raman scattering. Early stages of nanocrystalline film formation on mica and HOPG substrates were studied by AFM. Mechanism of nanocrystal growth on substrate is discussed. in here

Effects of high-energy proton irradiation on the superconducting properties of Fe(Se,Te) thin films

NASA Astrophysics Data System (ADS)

Sylva, G.; Bellingeri, E.; Ferdeghini, C.; Martinelli, A.; Pallecchi, I.; Pellegrino, L.; Putti, M.; Ghigo, G.; Gozzelino, L.; Torsello, D.; Grimaldi, G.; Leo, A.; Nigro, A.; Braccini, V.

2018-05-01

In this paper we explore the effects of 3.5 MeV proton irradiation on Fe(Se,Te) thin films grown on CaF2. In particular, we carry out an experimental investigation with different irradiation fluences up to 7.30 · 1016 cm‑2 and different proton implantation depths, in order to clarify whether and to what extent the critical current is enhanced or suppressed, what are the effects of irradiation on the critical temperature, resistivity, and critical magnetic fields, and finally what is the role played by the substrate in this context. We find that the effect of irradiation on superconducting properties is generally small compared to the case of other iron-based superconductors. The irradiation effect is more evident on the critical current density Jc, while it is minor on the transition temperature Tc, normal state resistivity ρ, and on the upper critical field Hc2 up to the highest fluences explored in this work. In more detail, our analysis shows that when protons implant in the substrate far from the superconducting film, the critical current can be enhanced up to 50% of the pristine value at 7 T and 12 K; meanwhile, there is no appreciable effect on critical temperature and critical fields together with a slight decrease in resistivity. On the contrary, when the implantation layer is closer to the film–substrate interface, both critical current and temperature show a decrease accompanied by an enhancement of the resistivity and lattice strain. This result evidences that possible modifications induced by irradiation in the substrate may affect the superconducting properties of the film via lattice strain. The robustness of the Fe(Se,Te) system to irradiation-induced damage makes it a promising compound for the fabrication of magnets in high-energy accelerators.

Realizing controllable graphene nucleation by regulating the competition of hydrogen and oxygen during chemical vapor deposition heating.

PubMed

Zhang, Haoran; Zhang, Yaqian; Zhang, Yanhui; Chen, Zhiying; Sui, Yanping; Ge, Xiaoming; Deng, Rongxuan; Yu, Guanghui; Jin, Zhi; Liu, Xinyu

2016-08-24

Oxygen can passivate Cu surface active sites when graphene nucleates. Thus, the nucleation density is decreased. The CuO/Cu substrate was chosen for graphene domain synthesis in our study. The results indicate that the CuO/Cu substrate is beneficial for large-scale, single-crystal graphene domain synthesis. Graphene grown on the CuO/Cu substrate exhibits fewer nucleation sites than on Cu foils, suggesting that graphene follows an oxygen-dominating growth. Hydrogen treatment via a heating process could weaken the surface oxygen's role in limiting graphene nucleation under the competition of hydrogen and oxygen and could transfer the synthesis of graphene into a hydrogen-dominating growth. However, the competition only exists during the chemical vapor deposition heating process. For non-hydrogen heated samples, oxygen-dominating growth is experienced even though the samples are annealed in hydrogen for a long time after the heating process. With the temperature increases, the role of hydrogen gradually decreases. The balance of hydrogen and oxygen is adjusted by introducing hydrogen gas at a different heating temperatures. The oxygen concentration on the substrate surface is believed to determine the reactions mechanisms based on the secondary ion mass spectrometry test results. This study provides a new method for the controllable synthesis of graphene nucleation during a heating process.

Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

2010-02-01

Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

Deposition of Electrically Conductive Coatings on Castable Polyurethane Elastomers by the Flame Spraying Process

NASA Astrophysics Data System (ADS)

Ashrafizadeh, H.; McDonald, A.; Mertiny, P.

2016-02-01

Deposition of metallic coatings on elastomeric polymers is a challenging task due to the heat sensitivity and soft nature of these materials and the high temperatures in thermal spraying processes. In this study, a flame spraying process was employed to deposit conductive coatings of aluminum-12silicon on polyurethane elastomers. The effect of process parameters, i.e., stand-off distance and air added to the flame spray torch, on temperature distribution and corresponding effects on coating characteristics, including electrical resistivity, were investigated. An analytical model based on a Green's function approach was employed to determine the temperature distribution within the substrate. It was found that the coating porosity and electrical resistance decreased by increasing the pressure of the air injected into the flame spray torch during deposition. The latter also allowed for a reduction of the stand-off distance of the flame spray torch. Dynamic mechanical analysis was performed to investigate the effect of the increase in temperature within the substrate on its dynamic mechanical properties. It was found that the spraying process did not significantly change the storage modulus of the polyurethane substrate material.

Molecular dynamics study of the growth of a metal nanoparticle array by solid dewetting

NASA Astrophysics Data System (ADS)

Luan, Yanhua; Li, Yanru; Nie, Tiaoping; Yu, Jun; Meng, Lijun

2018-03-01

We investigated the effect of the substrate and the ambient temperature on the growth of a metal nanoparticle array (nanoarray) on a solid-patterned substrate by dewetting a Au liquid film using an atomic simulation technique. The patterned substrate was constructed by introducing different interaction potentials for two atom groups ( C 1 and C 2) in the graphene-like substrate. The C 1 group had a stronger interaction between the Au film and the substrate and was composed of regularly distributed circular disks with radius R and distance D between the centers of neighboring disks. Our simulation results demonstrate that R and D have a strikingly different influence on the growth of the nanoparticle arrays. The degree of order of the nanoarray increases first before it reaches a peak and then decreases for increasing R at fixed D. However, the degree of order increases monotonously when D is increased and reaches a saturated value beyond a critical value of D for a fixed R. Interestingly, a labyrinth-like structure appeared during the dewetting process of the metal film. The simulation results also indicated that the temperature was an important factor in controlling the properties of the nanoarray. An appropriate temperature leads to an optimized nanoarray with a uniform grain size and well-ordered particle distribution. These results are important for understanding the dewetting behaviors of metal films on solid substrates and understanding the growth of highly ordered metal nanoarrays using a solid-patterned substrate method.

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Oshima, Yuichi; Ahmadi, Elaheh; Kaun, Stephen; Wu, Feng; Speck, James S.

2018-01-01

We investigated the homoepitaxial growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of β-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h-1, and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h-1 when the substrate temperature was increased from 750 °C to 800 °C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h-1. The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) β-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.

Heteroepitaxial growth of Pt and Au thin films on MgO single crystals by bias-assisted sputtering

DOE PAGES

Tolstova, Yulia; Omelchenko, Stefan T.; Shing, Amanda M.; ...

2016-03-17

The crystallographic orientation of a metal affects its surface energy and structure, and has profound implications for surface chemical reactions and interface engineering, which are important in areas ranging from optoelectronic device fabrication to catalysis. However, it can be very difficult and expensive to manufacture, orient, and cut single crystal metals along different crystallographic orientations, especially in the case of precious metals. One approach is to grow thin metal films epitaxially on dielectric substrates. In this work, we report on growth of Pt and Au films on MgO single crystal substrates of (100) and (110) surface orientation for use asmore » epitaxial templates for thin film photovoltaic devices. We develop bias-assisted sputtering for deposition of oriented Pt and Au films with sub-nanometer roughness. We show that biasing the substrate decreases the substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 600 to 350 °C for Au, and from 750 to 550 °C for Pt, without use of transition metal seed layers. Additionally, this temperature can be further reduced by reducing the growth rate. Biased deposition with varying substrate bias power and working pressure also enables control of the film morphology and surface roughness.« less

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

PubMed

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Temperature dependence of O2 consumption; opposite effects of leptin and etomoxir on respiratory quotient in mice.

PubMed

Högberg, Helena; Engblom, Lars; Ekdahl, Asa; Lidell, Veronica; Walum, Erik; Alberts, Peteris

2006-04-01

The aims were to compare the temperature dependence of the metabolic rate in young ob/ob mice with that in mature ob/ob and db/db mice and to examine the effect on the metabolic substrate preference of leptin and etomoxir in ob/ob, C57BL/6J (wild-type), and db/db mice. In vivo oxygen consumption and carbon dioxide production were continuously measured by indirect calorimetry, and body temperature and total locomotor activity were measured by an implanted transponder. Leptin, etomoxir, or vehicle was administered intraperitoneally. The temperature dependence of the metabolic rate of mature ob/ob and db/db mice were similar to that in wild-type mice. In young 6-week-old ob/ob mice, the metabolic rate was almost doubled at 15 degrees C. Leptin (2 x 3 mg/kg) decreased the respiratory quotient (RQ) and carbon dioxide production but did not alter oxygen consumption, body temperature, or locomotor activity in ob/ob and C57BL/6J mice and had no effect in the db/db mice. Etomoxir (2 x 30 mg/kg) enhanced RQ and decreased oxygen consumption, carbon dioxide production, and body temperature in ob/ob, C57BL/6J, and db/db mice. Total locomotor activity was reduced in ob/ob and C57BL/6J mice. In young ob/ob mice, the temperature sensitivity was enhanced compared with mature mice. Leptin and etomoxir had opposite effects on metabolic substrate preference. Leptin and lowered environmental temperature increased the relative fat oxidation as indicated by decreased RQ, possibly through activation of the sympathetic nervous system.

Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

NASA Technical Reports Server (NTRS)

Wu, Liangjin; Iyer, Shanthi; Nunna, Kalyan; Bharatan, Sudhakar; Li, Jia; Collis, Ward J.

2005-01-01

In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

NASA Astrophysics Data System (ADS)

Raship, N. A.; Sahdan, M. Z.; Adriyanto, F.; Nurfazliana, M. F.; Bakri, A. S.

2017-01-01

Copper oxide films were grown on silicon substrates by sol-gel dip coating method. In order to study the effects of annealing temperature on the properties of copper oxide films, the temperature was varied from 200 °C to 450 °C. In the process of dip coating, the substrate is withdrawn from the precursor solution with uniform velocity to obtain a uniform coating before undergoing an annealing process to make the copper oxide film polycrystalline. The physical properties of the copper oxide films were measured by an X-ray diffraction (XRD), a field emission scanning electron microscope (FESEM), an atomic force microscopy (AFM) and a four point probe instrument. From the XRD results, we found that pure cuprite (Cu2O) phase can be obtained by annealing the films annealed at 200 °C. Films annealed at 300 °C had a combination phase which consists of tenorite (CuO) and cuprite (Cu2O) phase while pure tenorite (CuO) phase can be obtained at 450 °C annealing temperature. The surface microstructure showed that the grains size is increased whereas the surface roughness is increased and then decreases by increasing in annealing temperature. The films showed that the resistivity decreased with increasing annealing temperature. Consequently, it was observed that annealing temperature has strong effects on the structural, morphological and electrical properties of copper oxide films.

The influence of polymer architectures on the dewetting behavior of thin polymer films: from linear chains to ring chains.

PubMed

Wang, Lina; Xu, Lin; Liu, Binyuan; Shi, Tongfei; Jiang, Shichun; An, Lijia

2017-05-03

The dewetting behavior of ring polystyrene (RPS) film and linear polystyrene (LPS) film on silanized Si substrates with different grafting densities and PDMS substrate was investigated. Results showed that polymer architectures greatly influenced the dewetting behavior of the thin polymer film. On the silanized Si substrate with 69% grafting density, RPS chains exhibited stronger adsorption compared with LPS chains, and as a result the wetting layer formed more easily. For LPS films, with a decreased annealing temperature, the stability of the polymer film changed from non-slip dewetting via apparent slip dewetting to apparently stable. However, for RPS films, the polymer film stability switched from apparent slip dewetting to apparently stable. On the silanized Si substrate with 94% grafting density, the chain adsorption became weaker and the dewetting processes were faster than that on the substrate with 69% grafting density at the same experimental temperature for both the LPS and RPS films. Moreover, on the PDMS substrate, LPS films always showed non-slip dewetting, while the dewetting kinetics of RPS films switched from non-slip dewetting to slip dewetting behaviour. Forming the wetting layer strongly influenced the stability and dewetting behavior of the thin polymer films.

Complex coupled metabolic and prokaryotic community responses to increasing temperatures in anaerobic marine sediments: critical temperatures and substrate changes

PubMed Central

Roussel, Erwan G.; Cragg, Barry A.; Webster, Gordon; Sass, Henrik; Tang, Xiaohong; Williams, Angharad S.; Gorra, Roberta; Weightman, Andrew J.; Parkes, R. John

2015-01-01

The impact of temperature (0–80°C) on anaerobic biogeochemical processes and prokaryotic communities in marine sediments (tidal flat) was investigated in slurries for up to 100 days. Temperature had a non-linear effect on biogeochemistry and prokaryotes with rapid changes over small temperature intervals. Some activities (e.g. methanogenesis) had multiple ‘windows’ within a large temperature range (∼10 to 80°C). Others, including acetate oxidation, had maximum activities within a temperature zone, which varied with electron acceptor [metal oxide (up to ∼34°C) and sulphate (up to ∼50°C)]. Substrates for sulphate reduction changed from predominantly acetate below, and H2 above, a 43°C critical temperature, along with changes in activation energies and types of sulphate-reducing Bacteria. Above ∼43°C, methylamine metabolism ceased with changes in methanogen types and increased acetate concentrations (>1 mM). Abundances of uncultured Archaea, characteristic of deep marine sediments (e.g. MBGD Euryarchaeota, ‘Bathyarchaeota’) changed, indicating their possible metabolic activity and temperature range. Bacterial cell numbers were consistently higher than archaeal cells and both decreased above ∼15°C. Substrate addition stimulated activities, widened some activity temperature ranges (methanogenesis) and increased bacterial (×10) more than archaeal cell numbers. Hence, additional organic matter input from climate-related eutrophication may amplify the impact of temperature increases on sedimentary biogeochemistry. PMID:26207045

Magnetic properties and thermal stability of Ti-doped CrO2 films

NASA Astrophysics Data System (ADS)

Zhang, Z.; Cheng, M.; Lu, Z.; Yu, Z.; Liu, S.; Liang, R.; Liu, Y.; Shi, J.; Xiong, R.

2018-04-01

Chromium dioxide (CrO2) is a striking half metal material which may have important applications in the field of spintronics. However, pure CrO2 film is metastable at room temperature and the synthesis process can be only performed in a narrow temperature range of 390-410 °C with TiO2 used as substrate material. Here, we report the preparation and investigation of (1 0 0) oriented Ti-doped CrO2 films on TiO2 substrates. It is found that Ti-doped films can maintain pure rutile phase even after a 510 °C post-annealing, showing much better thermal stability than pure CrO2 films. Ti-doped films can be prepared in a wider temperature window (390-470 °C), which may be attributed to the improvement of thermal stability. The broadening of process window may be beneficial for further improvement of film quality by optimizing growth temperature in a larger range. In addition to the improvement of thermal stability, the magnetic properties of Ti-doped CrO2 are also found to be tuned by Ti doping: saturation magnetizations of Ti-doped films at room temperature are significantly lower, and magnetic anisotropy decreases as the Ti-concentration increases, which is beneficial for decreasing switching current density in STT-based spintronic devices.

Study of sputtered ZnO modified by Direct Laser Interference Patterning: Structural characterization and temperature simulation

NASA Astrophysics Data System (ADS)

Parellada-Monreal, L.; Castro-Hurtado, I.; Martínez-Calderón, M.; Rodriguez, A.; Olaizola, S. M.; Gamarra, D.; Lozano, J.; Mandayo, G. G.

2018-05-01

ZnO thin film sputtered on alumina substrate is processed by Direct Laser Interference Patterning (DLIP). The heat transfer equation has been simulated for interference patterns with a period of 730 nm and two different fluences (85 mJ/cm2 and 165 mJ/cm2). A thermal threshold of 900 K, where crystal modification occurs has been calculated, indicating a lateral and depth processing around 173 nm and 140 nm, respectively. The experimentally reproduced samples have been analyzed from the structural and composition point of view and compared to conventional thermal treatments at three different temperatures (600 °C, 700 °C and 800 °C). Promising properties have been observed for the laser treated samples, such as low influence on the thin film/substrate interface, an improvement of the crystallographic structure, as well as a decrease of the oxygen content from O/Zn = 2.10 to 1.38 for the highest fluence, getting closer to the stoichiometry. The DLIP characteristics could be suitable for the replacement of annealing process in the case of substrates that cannot achieve high temperatures as most of flexible substrates.

Influence of substrate temperature on structural, morphological, optical and electrical properties of Bi-doped MnInS4 thin films prepared by nebuliser spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Kennedy, A.; Senthil Kumar, V.; Pradeev Raj, K.

2017-11-01

Bismuth (Bi)-doped manganese indium sulphide (MnInS4) thin films were deposited on heated glass substrates using an aqueous solution of MnCl2, InCl3, (NH2)2CS and BiCl3 by the common nebuliser spray pyrolysis technique. The thin films were grown at various substrate temperatures ranging from 250 to 400 °C with a constant spray time (5 min). The present work aims to study the effect of substrate temperature on the structural, optical, photoluminescence and electrical properties of the grown thin films using various techniques like X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive spectrum (EDS), UV-Vis absorption spectroscopy, photoluminescence spectra (PL) and four probe methods. The XRD pattern reveals that the Bi-doped MnInS4 thin films were polycrystalline in nature with a cubic spinel structure whose particle size varies between 8.2 and 23.5 nm. From the FE-SEM micrographs, due to the change in the substrate temperature, shapes such as spherical, needle-shaped and T-shaped grains were observed throughout the surface of the films. The energy dispersive analysis spectrum (EDS) shows the presence of Mn, In, S and Bi in the film grown at 250 °C. It is interesting to note that the structural homogeneity and crystallinity of the film is improved due to the decrease in the absorption coefficient (α) and extinction coefficient (K) with an increase in substrate temperature. Also, with an increase in the substrate temperature, the calculated band gap energy was found to decrease from 1.87 to 1.59 eV. From the PL spectra, several intense peaks corresponding to blue, green, yellow, orange and red band emissions were observed in the wavelength region of 350-650 nm. Moreover as the intensity of the peak increases with increase in the substrate temperature, the crystallinity of the material of the film greatly improves concomitant with minimum strain and defect states. From the electrical studies, the electrical conductivity increases with increase in substrate temperature and a maximum electrical conductivity of 3.73 × 10-3 Ω-1m-1 were obtained for the film prepared at 400 °C. The thickness of the films was also measured and the values ranged between 743 nm (250 °C) to 629 nm (400 °C). The high absorption coefficient (1.85 × 104 cm-1) and high transmittance of the films make them an efficient window layer for solar cell applications. Incorporation of Bismuth (Bi) into MnInS4 matrix leads to improve the optical transmittance (85%) and electrical conductivity (3.11 × 10-3 Ω-1 m-1) of the film grown at 400 °C. Other important parameters like dislocation density (δ), strain (ε), the number of crystallites per unit area (N) and lattice distortion (LD), which are commonly used to describe the structural analysis were also presented. Bi-doped MnInS4 thin films were grown by a variety of deposition methods. Among them, spray pyrolysis is an eco-friendly method because of its low cost, mass production capacity, large area coatings and minimum wastage of the source materials.

Characterization of pomegranate juice and whey based novel beverage fermented by kefir grains.

PubMed

Sabokbar, Nayereh; Khodaiyan, Faramarz

2015-06-01

Mixture of pomegranate juice and whey was evaluated as a potential substrate for production of a novel probiotic beverage by kefir grains. Different fermentation conditions were used as viz: two fermentation temperature (19 ºC and 25 ºC) and two levels of kefir grains inoculum (5 % and 8%w/v). pH, acidity, lactose consumption as well as organic acids formation were determined during 32 hours of fermentation. Results showed that kefir grains were able to utilize lactose and decrease pH, increase acidity, produce lactic acid and acetic acid, while the level of citric acid decreased. It was observed these change depended on temperature and level of kefir grains with the highest changes at the temperature of 25 ºC and kefir grains inoculum of 8%w/v. Pomegranate juice and whey mixture therefore may serve as a suitable substrate for the production of novel probiotic dairy-fruit juice beverage by kefir grains and the sensory characteristics of this beverage were shown desirable results.

Influence of the chemical potential on the Casimir-Polder interaction between an atom and gapped graphene or a graphene-coated substrate

NASA Astrophysics Data System (ADS)

Henkel, C.; Klimchitskaya, G. L.; Mostepanenko, V. M.

2018-03-01

We present a formalism based on first principles of quantum electrodynamics at nonzero temperature which permits us to calculate the Casimir-Polder interaction between an atom and a graphene sheet with arbitrary mass gap and chemical potential, including graphene-coated substrates. The free energy and force of the Casimir-Polder interaction are expressed via the polarization tensor of graphene in (2 +1 ) -dimensional space-time in the framework of the Dirac model. The obtained expressions are used to investigate the influence of the chemical potential of graphene on the Casimir-Polder interaction. Computations are performed for an atom of metastable helium interacting with either a freestanding graphene sheet or a graphene-coated substrate made of amorphous silica. It is shown that the impacts of the nonzero chemical potential and the mass gap on the Casimir-Polder interaction are in opposite directions, by increasing and decreasing the magnitudes of the free energy and force, respectively. It turns out, however, that the temperature-dependent part of the Casimir-Polder interaction is decreased by a nonzero chemical potential, whereas the mass gap increases it compared to the case of undoped, gapless graphene. The physical explanation for these effects is provided. Numerical computations of the Casimir-Polder interaction are performed at various temperatures and atom-graphene separations.

Effect of annealing on structural, optical and electrical properties of SILAR synthesized CuO thin film

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-05-01

Nano crystalline CuO thin films were synthesize on glass substrate using SILAR technique. The structural, optical and electrical properties of the films were carried out for as deposited as well as for films post annealed in the temperature range 300 - 500° C. The X-ray diffraction pattern shows all the films are polycrystalline in nature with monoclinic phase. The crystallite size increase and lattice strain decreases with increase of annealing temperature indicating high quality of the films for annealed films. The value of band gap decreases with increases of annealing temperature of the film. The effect of annealing temperature on ionic conductivity and activation energy to electrical conduction process are discussed.

High-temperature wear and oxidation behaviors of TiNi/Ti2Ni matrix composite coatings with TaC addition prepared on Ti6Al4V by laser cladding

NASA Astrophysics Data System (ADS)

Lv, Y. H.; Li, J.; Tao, Y. F.; Hu, L. F.

2017-04-01

TiNi/Ti2Ni matrix composite coatings were produced on Ti6Al4V surfaces by laser cladding the mixed powders of Ni-based alloy and different contents of TaC (0, 5, 10, 15, 20, 30 and 40 wt.%). Microstructures of the coatings were investigated. High-temperature wear tests of the substrate and the coatings were carried out at 600 °C in air for 30 min. High-temperature oxidation tests of the substrate and the coatings were performed at 1000 °C in air for 50 h. Wear and oxidation mechanisms were revealed in detail. The results showed that TiNi/Ti2Ni as the matrix and TiC/TiB2/TiB as the reinforcements are the main phases of the coatings. The friction coefficients of the substrate and the coatings with different contents of TaC were 0.431 (the substrate), 0.554 (0 wt.%), 0.486 (5 wt.%), 0.457 (10 wt.%), 0.458 (15 wt.%), 0.507 (20 wt.%), 0.462 (30 wt.%) and 0.488 (40 wt.%). The wear rates of the coatings were decreased by almost 83%-98% than that of the substrate and presented a decreasing tendency with increasing TaC content. The wear mechanism of the substrate was a combination of serious oxidation, micro-cutting and brittle debonding. For the coatings, oxidation and slight scratching were predominant during wear, accompanied by slight brittle debonding in partial zones. With the increase in content of TaC, the oxidation film better shielded the coatings from destruction due to the effective friction-reducing role of Ta2O5. The oxidation rates of the substrate and the coatings with different contents of TaC at 1000 °C were 12.170 (the substrate), 5.886 (0 wt.%), 4.937 (5 wt.%), 4.517 (10 wt.%), 4.394 (15 wt.%), 3.951 (20 wt.%), 4.239 (30 wt.%) and 3.530 (40 wt.%) mg2 cm-4 h-1, respectively. The oxidation film formed outside the coating without adding TaC was composed of TiO2, NiO, Cr2O3, Al2O3 and SiO2. When TaC was added, Ta2O5 and TaC were also detected, which effectively improved the oxidation resistance of the coatings. The addition of TaC contributed to the improvement in high-temperature wear and oxidation resistance.

Temperature dependent mechanical property of PZT film: an investigation by nanoindentation.

PubMed

Li, Yingwei; Feng, Shangming; Wu, Wenping; Li, Faxin

2015-01-01

Load-depth curves of an unpoled Lead Zirconate Titanate (PZT) film composite as a function of temperature were measured by nanoindentation technique. Its reduce modulus and hardness were calculated by the typical Oliver-Pharr method. Then the true modulus and hardness of the PZT film were assessed by decoupling the influence of substrate using methods proposed by Zhou et al. and Korsunsky et al., respectively. Results show that the indentation depth and modulus increase, but the hardness decreases at elevated temperature. The increasing of indentation depth and the decreasing of hardness are thought to be caused by the decreasing of the critical stress needed to excite dislocation initiation at high temperature. The increasing of true modulus is attributed to the reducing of recoverable indentation depth induced by back-switched domains. The influence of residual stress on the indentation behavior of PZT film composite was also investigated by measuring its load-depth curves with pre-load strains.

Morphology of supercooled droplets freezing on solid surfaces

NASA Astrophysics Data System (ADS)

La, Shiren; Huang, Zhiting; Liu, Cong; Zhang, Xingyi

2018-05-01

Supercooled droplets freezing on solid surfaces are ubiquitous in nature. This letter investigates the influences of droplet viscosity on freezing velocity and frosting formation. Several experiments were conducted for three kinds of sessile droplets (water, silicone oil and oil) on two types of substrates (copper and iron) with different surface roughness at various temperatures. The results show that the water droplets exhibit obvious phase transition lines and their freezing speeds increase when the temperature of substrates decreases. It is found that the freezing speed is independent of the thermal conductivities of the substrates. Notably, the water droplets develop prominent bulges after freezing and subsequently nucleate to frost. In contrast, the high viscosity oil and silicone oil do not manifest an obvious phase transition line. Besides, no bulges are observed in these two kinds of droplets, suggesting that these frosting forms are of different mechanisms compared with water droplets.

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

2013-05-01

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

The Impact of Condensed-Phase Viscosity on Multiphase Oxidation Kinetics Involving O3, NO3, and OH

NASA Astrophysics Data System (ADS)

Li, J.; Forrester, S. M.; Knopf, D. A.

2017-12-01

Organic aerosol (OA) particles are ubiquitous in the atmosphere and have a significant influence on air quality, human health, cloud formation processes and global climate. By now it is well-recognized that organic particulate species can be amorphous in nature, existing in liquid, semi-solid and solid (glassy) phase states. The phase state is modulated by particle composition and environmental conditions such as relative humidity and temperature. These modifications can influence particle viscosity and molecular diffusion and, therefore, impact the reactive uptake of gas-phase oxidants and radicals by the organic substrate. In this study, we determined the reactive uptake coefficients (γ) of O3 by canola oil, NO3 by levoglucosan (LEV) and a LEV/xylitol mixture, and OH by glucose/sulfuric acid mixtures and glucose/1,2,6-hexanetriol mixtures under dry conditions and for temperatures ranging from 293 K to 213 K. Uptake coefficients have been measured employing a chemical ionization mass spectrometer coupled to a temperature-controlled rotating-wall flow reactor. Glass transition temperatures (Tg) of applied substrates were estimated by the Gordon-Taylor equation. Phase states were qualitatively probed via poking experiment using a temperature-controlled cooling stage. Shattering of the substrates indicated the formation of a glassy state. Results show a significant impact of condensed phase state on reactive uptake kinetics whereby γ changed most profoundly around estimated Tg. For example, γ decreases from 6.5×10-4 to 1.9 ×10-5 for O3 uptake by canola oil and from 8.3×10-4 to 3.1×10-4 for NO3 uptake by the LEV/xylitol mixture, respectively. The decrease in γ will be discussed with regard to phase state, desorption lifetime, and Arrhenius temperature dependence of reaction rates. First results of OH uptakes at low temperatures are presented, together with a discussion of the relevant atmospheric implications.

Origin of thickness dependence of structural phase transition temperatures in BiFeO 3 thin films

DOE PAGES

Yang, Yongsoo; Beekman, Christianne; Siemons, Wolter; ...

2016-03-28

In this study, two structural phase transitions are investigated in highly strained BiFeO 3 thin films grown on LaAlO 3 substrates, as a function of film thickness and temperature via synchrotron x-ray diffraction. Both transition temperatures (upon heating: monoclinic MC to monoclinic MA, and MA to tetragonal) decrease as the film becomes thinner. The existence of an interface layer at the film-substrate interface, deduced from half-order peak intensities, contributes to this behavior only for the thinnest samples; at larger thicknesses (above a few nanometers) the temperature dependence can be understood in terms of electrostatic considerations akin to size effects inmore » ferroelectric phase transitions, but observed here for structural phase transitions within the ferroelectric phase and related to the rearrangement rather than the formation of domains. For ultra-thin films, the tetragonal structure is stable at all investigated temperatures (down to 30 K).« less

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suski, T.; Litwin-Staszewska, E.; Piotrzkowski, R.

We demonstrate that relatively small GaN substrate misorientation can strongly change hole carrier concentration in Mg doped GaN layers grown by metalorganic vapor phase epitaxy. In this work intentionally misoriented GaN substrates (up to 2 deg. with respect to ideal <0001> plane) were employed. An increase in the hole carrier concentration to the level above 10{sup 18} cm{sup -3} and a decrease in GaN:Mg resistivity below 1 {omega} cm were achieved. Using secondary ion mass spectroscopy we found that Mg incorporation does not change with varying misorientation angle. This finding suggests that the compensation rate, i.e., a decrease in unintentionalmore » donor density, is responsible for the observed increase in the hole concentration. Analysis of the temperature dependence of electrical transport confirms this interpretation.« less

Variation of optical properties of gel-derived VO2 thin films with temperature

NASA Astrophysics Data System (ADS)

Hou, Lisong; Lu, Song W.; Gan, Fuxi

1991-11-01

VO2 thin films are prepared on three kinds of substrates by the sol-gel dip-coating method followed by heat treatment under vacuum conditions. The IR and UV-visible spectra of the films are studied during heating and cooling between room temperature and 100 degree(s)C. The experimental results show that the films exhibit thermally-induced reversible phase transition and, as a result, the maximum changes in transmittance and reflectivity are 58% and 25%, respectively, in the case of vacuum heat treatment at 400 degree(s)C and silica glass substrates. The refractive index n decreases and the extinction coefficient k increases when heating these films from room temperature to 100 degree(s)C, and vice versa. The reasons why the optical constants and IR absorption spectra change so remarkably are discussed.

A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system

NASA Astrophysics Data System (ADS)

Su, Juan; Chen, Xuejiang; Li, Yuan; Pons, Michel; Blanquet, Elisabeth

2017-06-01

A niching genetic algorithm (NGA) was presented to optimize a SiC-bulk crystal growth system by PVT. The NGA based on clearing mechanism and its combination method with heat transfer model for SiC crystal growth were described in details. Then three inverse problems for optimization of growth system were carried out by NGA. Firstly, the radius of blind hole was optimized to decrease the radial temperature gradient along the substrate while the center temperature on the surface of substrate is fixed at 2500 K. Secondly, insulation materials with anisotropic thermal conductivities were selected to obtain much higher growth rate as 600, 800 and 1000 μm/h. Finally, the density of coils was also rearranged to minimize the temperature variation in the SiC powder. All the results were analyzed and discussed.

Method of making a light weight battery plaque

NASA Technical Reports Server (NTRS)

Reid, M. A.; Post, R. E.; Soltis, D. G. (Inventor)

1984-01-01

A nickel plaque which may be coated with a suitable metal or compound to make an electrode for a fuel cell or battery is fabricated by directing nickel sensitizer, catalyst and plating solutions through a porous plastic substrate in the order named and at prescribed temperatures and flow rates. A boride compound dissolved in the plating solution decreases the electrical resistance of the plaque. Certain substrates may require treatment in an alkali solution to dissolve filler materials thereby increasing porosity to a required 65%.

The Effect of Temperature and Hydrogen Limited Growth on the Fractionation of Sulfur Isotopes by Thermodesulfatator indicus, a Deep-sea Hydrothermal Vent Sulfate-Reducing Bacterium

NASA Astrophysics Data System (ADS)

Hoek, J.; Reysenbach, A.; Habicht, K.; Canfield, D. E.

2004-12-01

Sulfate-reducing bacteria fractionate sulfur isotopes during dissimilatory sulfate reduction, producing sulfide depleted in 34S. Although isotope fractionation during sulfate reduction of pure cultures has been extensively studied, most of the research to date has focused on mesophilic sulfate reducers, particularly for the species Desulfovibrio desulfuricans. Results from these studies show that: 1) fractionations range from 3-46‰ with an average around 18‰ , 2) when organic electron donors are utilized, the extent of fractionation is dependent on the rate of sulfate reduction, with decreasing fractionations observed with higher specific rates, 3) fractionations are suppressed with low sulfate concentrations, and when hydrogen is used as the electron donor. High specific sulfate-reduction rates are encountered when sulfate-reducing bacteria metabolize at their optimal temperature and under non-limiting substrate conditions. Changes in both temperature and substrate availability could shift fractionations from those expressed under optimal growth conditions. Sulfate reducers may frequently experience substrate limitation and sub-optimal growth temperatures in the environment. Therefore it is important to understand how sulfate-reducing bacteria fractionate sulfur isotopes under conditions that more closely resemble the restrictions imposed by the environment. In this study the fractionation of sulfur isotopes by Thermodesulfatator indicus was explored during sulfate reduction under a wide range of temperatures and with both hydrogen-saturating and hydrogen-limited conditions. T. indicus is a thermophilic (temperature optimum = 70° C) chemolithotrophic sulfate-reducing bacterium, which was recently isolated from a deep-sea hydrothermal vent on the Central Indian Ridge. This bacterium represents the type species of a new genus and to date is the most deeply branching sulfate-reducing bacterium known. T. indicus was grown in carbonate-buffered salt-water medium with H2 as the sole electron donor, and CO2 as primary carbon source. The fractionation of sulfur isotopes was measured in batch cultures and in a thermal gradient block over the full temperature range of growth (40-80° C). For experiments in the gradient block, cell-specific rates of sulfate reduction increased with increasing temperatures to 70° C after which sulfate-reduction rates rapidly decreased. The range of fractionations (1.5-10‰ ) was typical for growth with hydrogen as the electron donor. Fractionations decreased with increasing temperature from 40--60° C, and increased with increasing temperatures from 60-80° C. Growth under H2-limited conditions in a fed-batch culture revealed high fractionations of 24-37‰ . This is the first report of sulfur isotope fractionation under H2 limited growth and indicates that large fractionations are produced when H2 is supplied as a limiting substrate. Our results suggest that fractionation is controlled by the competition of forward and reverse enzymatic reaction rates during sulfate reduction and by sulfate transport into the cell.

Thermal stability of supported gold nanoparticles

NASA Astrophysics Data System (ADS)

Turba, Timothy Fredrick

Nanoparticle gold is of interest for a wide array of applications including catalysis, gas sensing, and light absorption for color filters and optical switches. Many of these applications are dependent upon the particles having sizes <5nm. In this paper, the thermal stability of nanoparticle gold is evaluated. Unsupported gold nanoparticles can grow (and in some cases double their size) even at room temperature. An important approach to stabilizing gold nanoparticles is through an interaction with a suitable substrate support material. Semiconductor substrates such as GaN are important supports for gold nanoparticles for applications such as sensors, but GaN does not provide a significant stabilizing effect at high temperatures. This paper covers a number of different substrate materials and in particular shows that for some substrates, such as SiO2, gold nanoparticles can be stable at temperatures up to 500°C, which is significantly above the Tammann temperature for bulk gold (395°C). In this dissertation, gold nanoparticles are shown to have complete stability on aluminum-supported silica nanosprings at 550°C in air. This stability window is one of the highest reported for nanoparticle gold and potentially enables a number of applications for this highly active catalyst. X-ray photoelectron spectroscopy measurements were performed before and after heating to 550°C to determine the nature of the interaction between gold and SiO2. A 1.2 eV drop in gold 4f binding energy after heating signified a shift to anionic gold particles (i.e., Au delta-) indicative of strong bonds to oxygen vacancies with neighboring Sidelta+ atoms. Heating in hydrogen at 550°C resulted in a binding energy decrease of 0.4 eV due to an increased fraction of particles with decreased coordination numbers (i.e., more atoms at edges and corners). Lastly, heating gold nanoparticles in an atmosphere of 10% relative humidity at 550°C resulted in apparent encapsulation of the gold.

Comparison Actin- and Glass-Supported Phospholipid Bilayer Diffusion Coefficients

PubMed Central

Sterling, Sarah M.; Dawes, Ryan; Allgeyer, Edward S.; Ashworth, Sharon L.; Neivandt, David J.

2015-01-01

The formation of biomimetic lipid membranes has the potential to provide insights into cellular lipid membrane dynamics. The construction of such membranes necessitates not only the utilization of appropriate lipids, but also physiologically relevant substrate/support materials. The substrate materials employed have been shown to have demonstrable effects on the behavior of the overlying lipid membrane, and thus must be studied before use as a model cushion support. To our knowledge, we report the formation and investigation of a novel actin protein-supported lipid membrane. Specifically, inner leaflet lateral mobility of globular actin-supported DMPC (1,2-dimyristoyl-sn-glycero-3-phosphocholine) bilayers, deposited via the Langmuir-Blodgett/Langmuir Schaefer methodology, was investigated by z-scan fluorescence correlation spectroscopy across a temperature range of 20–44°C. The actin substrate was found to decrease the diffusion coefficient when compared to an identical membrane supported on glass. The depression of the diffusion coefficient occurred across all measured temperatures. These results indicated that the actin substrate exerted a direct effect on the fluidity of the lipid membrane and highlighted the fact that the choice of substrate/support is critical in studies of model lipid membranes. PMID:25902434

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

Epitaxial structure and electronic property of β-Ga2O3 films grown on MgO (100) substrates by pulsed-laser deposition

NASA Astrophysics Data System (ADS)

Wakabayashi, Ryo; Yoshimatsu, Kohei; Hattori, Mai; Ohtomo, Akira

2017-10-01

We investigated heteroepitaxial growth of Si-doped Ga2O3 films on MgO (100) substrates by pulsed-laser deposition as a function of growth temperature (Tg) to find a strong correlation between the structural and electronic properties. The films were found to contain cubic γ-phase and monoclinic β-phase, the latter of which indicated rotational twin domains when grown at higher Tg. The formation of the metastable γ-phase and twin-domain structure in the stable β-phase are discussed in terms of the in-plane epitaxial relationships with a square MgO lattice, while crystallinity of the β-phase degraded monotonically with decreasing Tg. The room-temperature conductivity indicated a maximum at the middle of Tg, where the β-Ga2O3 layer was relatively highly crystalline and free from the twin-domain structure. Moreover, both crystallinity and conductivity of β-Ga2O3 films on the MgO substrates were found superior to those on α-Al2O3 (0001) substrates. A ratio of the conductivity, attained to the highest quantity on each substrate, was almost three orders of magnitude.

Structural and optical properties of tin disulphide thin films grown by flash evaporation

NASA Astrophysics Data System (ADS)

Banotra, Arun; Padha, Naresh

2018-04-01

Tin Disulphide thin films were deposited by Flash Evaporation method on corning Glass Substrate at different substrate temperatures. The deposited films were undertaken for Structural, Optical and compositional characterizations. Compositional analysis of the films exhibited decrease in the sulphur content enabling S/Sn ratio to vary from 2.05 to 1.32 with increasing substrate temperature. X-ray diffraction reveals amorphous nature of the as-deposited films with varying substrate temperatures. Optical measurements estimated from absorbance spectra suggest higher absorbance at λ≤500nm and higher transmission at λ≥500nm with bandgap changes from 2.45eV to 2.09eV. The 323K as-deposited films were undertaken for annealing which transforms the films into crystalline form corresponding to hexagonal SnS2 phase at 423K and above. However, the optical response for the annealed samples shows a higher transmission of 70% in the visible region which increases further in the Infrared region of the spectrum achieving maximum transmission upto 98%. This higher transmission in the Visible to Infrared region of the solar spectrum in amorphous as well as crystalline form makes the film suitable for their use as a window layer in the Solar Cell Design.

Preparation and characterization of TiO2 and Si-doped octacalcium phosphate composite coatings on zirconia ceramics (Y-TZP) for dental implant applications

NASA Astrophysics Data System (ADS)

Bao, Lei; Liu, Jingxiao; Shi, Fei; Jiang, Yanyan; Liu, Guishan

2014-01-01

In order to prevent the low temperature degradation and improve the bioactivity of zirconia ceramic implants, TiO2 and Si-doped octacalcium phosphate composite coating was prepared on zirconia substrate. The preventive effect on low temperature degradation and surface morphology of the TiO2 layer were studied. Meanwhile, the structure and property changes of the bioactive coating after doping Si were discussed. The results indicate that the dense TiO2 layer, in spite of some microcracks, inhibited the direct contact of the water vapor with the sample's surface and thus prevented the low temperature degradation of zirconia substrates. The acceleration aging test shows that the ratio of the monoclinic phase transition decreased from 10% for the original zirconia substrate to 4% for the TiO2-coated substrate. As to the Si-doped octacalcium phosphate coating prepared by biomimetic method, the main phase composition of the coating was octacalcium phosphate. The morphology of the coating was lamellar-like, and the surface was uniform and continuous with no cracks being observed. It is suggested that Si was added into the coating both through substituting for PO43- and doping as NaSiO3.

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

NASA Astrophysics Data System (ADS)

Yuan, Feifei; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina; Hühne, Ruben; Schultz, Ludwig; Shi, Zhixiang

2015-06-01

FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc(θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc(θ) peaks for H||c were observed in films on CaF2 and LaAlO3. Jc(θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau approach with appropriate anisotropy ratio γJ. The scaling parameter γJ is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates.

Effect of negative bias on TiAlSiN coating deposited on nitrided Zircaloy-4

NASA Astrophysics Data System (ADS)

Jun, Zhou; Zhendong, Feng; Xiangfang, Fan; Yanhong, Liu; Huanlin, Li

2018-01-01

TiAlSiN coatings were deposited on the nitrided Zircaloy-4 by multi-arc ion plating at -100 V, -200 V and -300 V. In this study, the high temperature oxidation behavior of coatings was tested by a box-type resistance furnace in air for 3 h at 800 °C; the macro-morphology of coatings was observed and analyzed by a zoom-stereo microscope; the micro-morphology of coatings was analyzed by a scanning electron microscopy (SEM), and the chemical elements of samples were analyzed by an energy dispersive spectroscopy(EDS); the adhesion strength of the coating to the substrate was measured by an automatic scratch tester; and the phases of coatings were analyzed by an X-ray diffractometer(XRD). Results show that the coating deposited at -100 V shows better high temperature oxidation resistance behavior, at the same time, Al elements contained in the coating is of the highest amount, meanwhile, the adhesion strength of the coating to the substrate is the highest, which is 33N. As the bias increases, high temperature oxidation resistance behavior of the coating weakens first and then increases, the amount of large particles on the surface of the coating increases first and then decreases whereas the density of the coating decreases first and then increases, and adhesion strength of the coating to the substrate increases first and then weakens. The coating's quality is relatively poor when the bias is -200 V.

The magnetic transition temperature tuned by strain in YMn0.9Ru0.1O3 thin films

NASA Astrophysics Data System (ADS)

Yang, L. P.; Zhang, A. M.; Wang, K.; Wu, X. S.; Zhai, Z. Y.

2018-05-01

Epitaxial orthorhombic YMn0.9Ru0.1O3 films with different thickness have been grown on (001)-SrTiO3 substrates by pulsed laser deposition (PLD). The crystal structure is well investigated by X-ray Diffraction. It is found that the out-of-plane parameter c slowly increases with decreasing thickness of samples because of the tensile strain between the films and substrates along c axis. The lengths of in-plane Mn-O bonds expand with the enhancement of strains, which is proved by Raman scatting. The magnetic measurements reveal that there exist two magnetic transition temperatures TN1 and TN2. The TN1 is close to that of orthorhombic YMnO3 bulk. With decreasing thickness of the films, TN1 keeps almost constant because of the small stain along c-axis. TN2, however, obviously increases from 117 K to 134 K, which could be related to the expansion of in-plane Mn-O bonds. Results show that the magnetic transition temperature of YMn0.9Ru0.1O3 films can be sensitively manipulated by the strain of the films.

Temperature Dependence of Thin Film Spiral Inductors on Alumina Over a Temperature Range of 25 to 475 C

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Jordan, Jennifer L.; Scardelletti, Maximilian C.

2010-01-01

In this paper, we present an analysis of inductors on an Alumina substrate over the temperature range of 25 to 475 C. Five sets of inductors, each set consisting of a 1.5, 2.5, 3.5, and a 4.5 turn inductor with different line width and spacing, were measured on a high temperature probe station from 10 MHz to 30 GHz. From these measured characteristics, it is shown that the inductance is nearly independent of temperature for low frequencies compared to the self resonant frequency, the parasitic capacitances are independent of temperature, and the resistance varies nearly linearly with temperature. These characteristics result in the self resonant frequency decreasing by only a few percent as the temperature is increased from 25 to 475 C, but the maximum quality factor decreases by a factor of 2 to 3. These observations based on measured data are confirmed through 2D simulations using Sonnet software.

Studies on nickel-tungsten oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Usha, K. S.; Sivakumar, R., E-mail: krsivakumar1979@yahoo.com; Sanjeeviraja, C.

2014-10-15

Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created duemore » to the addition of tungsten, respectively.« less

Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films

NASA Astrophysics Data System (ADS)

Kalkan, N.

2016-10-01

Current-voltage characteristics of indium-embedded indium oxide thin films (600-850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I-V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadoh, Taizoh, E-mail: sadoh@ed.kyushu-u.ac.jp; Chikita, Hironori; Miyao, Masanobu

2015-09-07

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe on Si substrates is strongly desired to realize advanced electronic and optical devices, which can be merged onto Si large-scale integrated circuits (LSI). To achieve this, annealing characteristics of a-GeSn/c-Si structures are investigated under wide ranges of the initial Sn concentrations (0%–26%) and annealing conditions (300–1000 °C, 1 s–48 h). Epitaxial growth triggered by SiGe mixing is observed after annealing, where the annealing temperatures necessary for epitaxial growth significantly decrease with increasing initial Sn concentration and/or annealing time. As a result, Ge-rich (∼80%) SiGe layers with Sn concentrations of ∼2% are realized by ultra-low temperature annealingmore » (300 °C, 48 h) for a sample with the initial Sn concentration of 26%. The annealing temperature (300 °C) is in the solid-liquid coexisting temperature region of the phase diagram for Ge-Sn system. From detailed analysis of crystallization characteristics and composition profiles in grown layers, it is suggested that SiGe mixing is generated by a liquid-phase reaction even at ultra-low temperatures far below the melting temperature of a-GeSn. This ultra-low-temperature growth technique of Ge-rich SiGe on Si substrates is expected to be useful to realize next-generation LSI, where various multi-functional devices are integrated on Si substrates.« less

Adhesion of in situ precipitated calcium carbonate in the presence and absence of magnetic field in quiescent conditions on different solid surfaces.

PubMed

Chibowski, Emil; Hołysz, Lucyna; Szcześ, Aleksandra

2003-11-01

Deposition of in situ precipitated calcium carbonate from Na(2)CO(3) and CaCl2 solutions on different substrates, i.e. stainless steel, copper, aluminium, and glass, was investigated at different temperatures, 20 degrees C, 40 degrees C, 60 degrees C and 80 degrees C, both in the absence and presence of S-S 0.1T magnetic field (MF). It was found that in quiescent conditions during 2h the amounts deposited firmly on the surfaces decreased with increasing temperature. If MF was present the deposition was reduced at all temperatures, and depended on the nature of the substrate. The largest MF effect was found on glass at 60 degrees C, which amounted 50% reduction of the deposit. However, at 80 degrees C no deposition was found in the presence of MF on aluminium surface. At this temperature the reproducibility of the experiments was poor, and an additional effect due to the metal surface corrosion (especially that of aluminium and copper) may be thought in alkaline environment of the experiments (pH ca. 10). Based on optical microscope photographs, it was concluded that the amounts of crystallographic forms of CaCO3 depended on the nature of substrate on which the precipitation and then the adhesion took place. To some extent the ratios of CaCO3 forms precipitated were different in the bulk phase than on the substrate surfaces at the same temperature, and this conclusion was based on the X-ray diffractograms. Some possible mechanisms causing MF effects are discussed.

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

NASA Astrophysics Data System (ADS)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Effect of substrate temperature on magnetic properties of MnFe2O4 thin films

NASA Astrophysics Data System (ADS)

Rajagiri, Prabhu; Sahu, B. N.; Venkataramani, N.; Prasad, Shiva; Krishnan, R.

2018-05-01

MnFe2O4 thin films were pulsed laser deposited on to quartz substrate from room temperature (RT) to 650 °C in a pure argon environment. Temperature dependence of spontaneous magnetization (4πMS) was measured on these films from 10 K to 350 K using a vibrating sample magnetometer. Ferromagnetic resonance (FMR) study was also carried out at 300 K. The exchange stiffness constant (D) values were obtained by fitting the 4πMS data to the Bloch's equation. The D values of the films thus found decreases while the 4πMS value increases, though non-monotonically, with the increase in TS and tend to reach bulk values at TS = 650 °C. The variation in D and 4πMS values of the films are explained based on the degree of inversion and oxidation state of cations in thin films.

Influence of Y doping concentration on the properties of nanostructured MxZn1-xO (M=Y) thin film deposited by nebulizer spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Mariappan, R.; Ponnuswamy, V.; Chandra Bose, A.; Suresh, R.; Ragavendar, M.

2014-09-01

Yttrium doped Zinc Oxide (YxZn1-xO) thin films deposited at a substrate temperature 400 °C. The effect of substrate temperature on the structural, surface morphology, compositional, optical and electrical properties of YxZn1-xO thin films was studied. X-ray diffraction studies show that all films are polycrystalline in nature with hexagonal crystal structure having highly textured (002) plane parallel to the surface of the substrate. The structural parameters, such as lattice constants (a and c), crystallite size (D), dislocation density (δ), microstrain (σ) and texture coefficient were calculated for different yttrium doping concentrations (x). High resolution scanning electron microscopy measurements reveal that the surface morphology of the films change from platelet like grains to hexagonal structure with grain size increase due to the yttrium doping. Energy dispersive spectroscopy confirms the presence of Y, Zn and O elements in the films prepared. Optical studies showed that all samples have a strong optical transmittance higher than 70% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the Y doping concentration increased. This result shows that the band gap is slightly decreased from 3.10 to 2.05 eV with increase of the yttrium doping concentrations (up to 7.5%) and then slightly increased. Room temperature PL measurements were done and the band-to-band emission energies of films were determined and reported. The complex impedance of the 10%Y doped ZnO film shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 70 to 175 °C.

Compressive Properties of Open-Cell Al Hybrid Foams at Different Temperatures

PubMed Central

Liu, Jiaan; Si, Fujian; Zhu, Xianyong; Liu, Yaohui; Zhang, Jiawei; Liu, Yan; Zhang, Chengchun

2017-01-01

Hybrid Ni/Al foams were fabricated by depositing electroless Ni–P (EN) coatings on open-cell Al foam substrate to obtain enhanced mechanical properties. The microstructure, chemical components and phases of the hybrid foams were observed and analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD), respectively. The mechanical properties of the foams were studied by compressive tests at different temperatures. The experiment results show that the coating is mainly composed of Ni and P elements. There was neither defect at the interface nor crack in the coatings, indicating that the EN coatings had fine adhesion to the Al substrate. The compressive strengths and energy absorption capacities of the as-received foam and hybrid foams decrease with the increasing testing temperatures, but the hybrid foams exhibit a lower decrement rate than the as-received foam. This might be attributed to the different failure mechanisms at different testing temperatures, which is conformed by fractography observation. PMID:28772456

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

NASA Astrophysics Data System (ADS)

Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

2017-10-01

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Temperature Dependent Mechanical Property of PZT Film: An Investigation by Nanoindentation

PubMed Central

Li, Yingwei; Feng, Shangming; Wu, Wenping; Li, Faxin

2015-01-01

Load-depth curves of an unpoled Lead Zirconate Titanate (PZT) film composite as a function of temperature were measured by nanoindentation technique. Its reduce modulus and hardness were calculated by the typical Oliver-Pharr method. Then the true modulus and hardness of the PZT film were assessed by decoupling the influence of substrate using methods proposed by Zhou et al. and Korsunsky et al., respectively. Results show that the indentation depth and modulus increase, but the hardness decreases at elevated temperature. The increasing of indentation depth and the decreasing of hardness are thought to be caused by the decreasing of the critical stress needed to excite dislocation initiation at high temperature. The increasing of true modulus is attributed to the reducing of recoverable indentation depth induced by back-switched domains. The influence of residual stress on the indentation behavior of PZT film composite was also investigated by measuring its load-depth curves with pre-load strains. PMID:25768957

Influences of W Content on the Phase Transformation Properties and the Associated Stress Change in Thin Film Substrate Combinations Studied by Fabrication and Characterization of Thin Film V1- xW xO2 Materials Libraries.

PubMed

Wang, Xiao; Rogalla, Detlef; Ludwig, Alfred

2018-04-09

The mechanical stress change of VO 2 film substrate combinations during their reversible phase transformation makes them promising for applications in micro/nanoactuators. V 1- x W x O 2 thin film libraries were fabricated by reactive combinatorial cosputtering to investigate the effects of the addition of W on mechanical and other transformation properties. High-throughput characterization methods were used to systematically determine the composition spread, crystalline structure, surface topography, as well as the temperature-dependent phase transformation properties, that is, the hysteresis curves of the resistance and stress change. The study indicates that as x in V 1- x W x O 2 increases from 0.007 to 0.044 the crystalline structure gradually shifts from the VO 2 (M) phase to the VO 2 (R) phase. The transformation temperature decreases by 15 K/at. % and the resistance change is reduced to 1 order of magnitude, accompanied by a wider transition range and a narrower hysteresis with a minimal value of 1.8 K. A V 1- x W x O 2 library deposited on a Si 3 N 4 /SiO 2 -coated Si cantilever array wafer was used to study simultaneously the temperature-dependent stress change σ( T) of films with different W content through the phase transformation. Compared with σ( T) of ∼700 MPa of a VO 2 film, σ( T) in V 1- x W x O 2 films decreases to ∼250 MPa. Meanwhile, σ( T) becomes less abrupt and occurs over a wider temperature range with decreased transformation temperatures.

Cyclic Thermal Stress-Induced Degradation of Cu Metallization on Si3N4 Substrate at -40°C to 300°C

NASA Astrophysics Data System (ADS)

Lang, Fengqun; Yamaguchi, Hiroshi; Nakagawa, Hiroshi; Sato, Hiroshi

2015-01-01

The high-temperature reliability of active metal brazed copper (AMC) on Si3N4 ceramic substrates used for fabricating SiC high-temperature power modules was investigated under harsh environments. The AMC substrate underwent isothermal storage at 300°C for up to 3000 h and a thermal cycling test at -40°C to 300°C for up to 3000 cycles. During isothermal storage at 300°C, the AMC substrate exhibited high reliability, characterized by very little deformation of the copper (Cu) layer, low crack growth, and low oxidation rate of the Cu layer. Under thermal cycling conditions at -40°C to 300°C, no detachment of the Cu layer was observed even after the maximum 3000 cycles of the experiment. However, serious deformation of the Cu layer occurred and progressed as the number of thermal cycles increased, thus significantly roughening the surface of the Cu metallized layer. The cyclic thermal stress led to a significant increase in the crack growth and oxidation of the Cu layer. The maximum depth of the copper oxides reached up to 5/6 of the Cu thickness. The deformation of the Cu layer was the main cause of the decrease of the bond strength under thermal cycling conditions. The shear strength of the SiC chips bonded on the AMC substrate with a Au-12 wt.%Ge solder decreased from the original 83 MPa to 14 MPa after 3000 cycles. Therefore, the cyclic thermal stress destroyed the Cu oxides and enhanced the oxidation of the Cu layer.

Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process.

PubMed

Vishwas, M; Narasimha Rao, K; Arjuna Gowda, K V; Chakradhar, R P S

2010-09-15

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. Copyright 2010 Elsevier B.V. All rights reserved.

Increasing the critical thickness of InGaAs quantum wells using strain-relief technologies

NASA Astrophysics Data System (ADS)

Jones, Andrew Marquis

The advantages of optical communication through silica fiber have made long-distance electrical communication through copper wire obsolete. The two windows of operation for long-haul optical communication are centered around the wavelengths of 1.3 mum and 1.55 mum, which have minimal amounts of signal attenuation and dispersion. Benefits of optical communications within these windows include low system costs, high bandwidth, and high system reliability which have encouraged the development of emitters and receivers at these relatively long wavelengths. Long-wavelength semiconductor lasers are typically fabricated on InP substrates, but their performance suffers greatly with increases in operating temperature. Laser diodes on GaAs substrates are not as sensitive to operating temperature due to quantum-well active regions with relative deep potential barriers, but critical thickness limits the wavelength ceiling to 1.1 mum. Strain-relief technologies are currently being investigated to enable long-wavelength lasers with deeper potential wells leading to a corresponding increase in characteristic temperatures. Having a larger lattice constant than GaAs enables ternary InGaAs substrates to increase the 1.1-mum wavelength ceiling. Extending this ceiling to one of the optical communication windows could enable high-characteristic-temperature, long-wavelength lasers. Broad-area and buried-heterostructure lasers have demonstrated the potential of ternary substrates to increase characteristic temperatures and emission wavelengths. Wavelengths as long as 1.15 mum and characteristic temperatures as high as 145 K have been achieved. Reduced-area metalorganic chemical vapor deposition involves the deposition of strained materials on isolated islands. Due to the discontinuous nature of reduced-area epitaxy, strained materials are allowed to expand near the mesa edges, decreasing the overall strain in the structure. Laser diodes using this technology have been successfully fabricated, and evidence for partial relief of strain energy has been obtained. Compliant membranes enable strain relief by depositing on an ultra-thin semiconductor base. Unlike growth on typical thick substrates, expansion of the compliant membrane during strained-layer regrowth allows the membrane to accommodate most of the strain energy. Ternary InGaAs compliant films supported above a GaAs substrate with single AlGaAs pedestals have been utilized to fabricate long-wavelength (1.35 mum) InGaAs quantum wells on a GaAs substrate.

Electrical, structural and optical properties of tellurium thin films on silicon substrate

NASA Astrophysics Data System (ADS)

Arora, Swati; Vijay, Y. K.

2018-05-01

Tellurium (Te) thin films of various thicknesses (200nm, 275nm, 350nm & 500nm) were prepared on Silicon (Si) using thermal evaporation at vacuum of 10-5 torr. It is observed that the resistivity decreases exponentially with the Increases Temperature. A direct band gap between 0.368 eV to 0.395 eV is obtained at different temperatures with Four Probe Method which shows that when we increase the thickness of material the band gap will exponentially decreases. Samples were analysed through X-ray diffraction and atomic force microscopy to attain complete and reliable micro structural in order.

Annealing temperature dependence of magnetoimpedance effect in electrodeposited [Ni80fe20/Cu]3 multilayers

NASA Astrophysics Data System (ADS)

Maulana, Frendi; Eko Prastyo, W.; Nuryani; Purnama, B.

2017-11-01

We have conducted an experiment of magnetoimpedance with a variation of annealing temperature of [Ni80Fe20/Cu)]3 multilayers. The multilayer is electrodeposited on Cu-PCB substrate. Magnetoimpedance effect is impedance measure on account of external magnetic field. The found MI (magnetoimpedance) ratio is 7,63 % (without annealing) and 4,75 % (using annealing) of 100 ºC. We find that MI ratio depends on to annealing temperature and current frequence. MI ratio decreases due to rising temperature and identified increase due to the frequency. The highest MI ratio is on a sample without annealing temperature and measurement at 100 kHz frequence.

Remodeling pathway control of mitochondrial respiratory capacity by temperature in mouse heart: electron flow through the Q-junction in permeabilized fibers.

PubMed

Lemieux, Hélène; Blier, Pierre U; Gnaiger, Erich

2017-06-06

Fuel substrate supply and oxidative phosphorylation are key determinants of muscle performance. Numerous studies of mammalian mitochondria are carried out (i) with substrate supply that limits electron flow, and (ii) far below physiological temperature. To analyze potentially implicated biases, we studied mitochondrial respiratory control in permeabilized mouse myocardial fibers using high-resolution respirometry. The capacity of oxidative phosphorylation at 37 °C was nearly two-fold higher when fueled by physiological substrate combinations reconstituting tricarboxylic acid cycle function, compared with electron flow measured separately through NADH to Complex I or succinate to Complex II. The relative contribution of the NADH pathway to physiological respiratory capacity increased with a decrease in temperature from 37 to 25 °C. The apparent excess capacity of cytochrome c oxidase above physiological pathway capacity increased sharply under hypothermia due to limitation by NADH-linked dehydrogenases. This mechanism of mitochondrial respiratory control in the hypothermic mammalian heart is comparable to the pattern in ectotherm species, pointing towards NADH-linked mt-matrix dehydrogenases and the phosphorylation system rather than electron transfer complexes as the primary drivers of thermal sensitivity at low temperature. Delineating the link between stress and remodeling of oxidative phosphorylation is important for understanding metabolic perturbations in disease evolution and cardiac protection.

Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhu, Guo; Sun, Jiangping; Zhang, Libin; Gan, Zhiyin

2018-06-01

The temperature effects on the growth of Cu thin film on Si (0 0 1) in the context of magnetron sputtering deposition were systematically studied using molecular dynamics (MD) method. To improve the comparability of simulation results at varying temperatures, the initial status data of incident Cu atoms used in all simulations were read from an identical file via LAMMPS-Python interface. In particular, crystalline microstructure, interface mixing and internal stress of Cu thin film deposited at different temperatures were investigated in detail. With raising the substrate temperature, the interspecies mixed volume and the proportion of face-centered cubic (fcc) structure in the deposited film both increased, while the internal compressive stress decreased. It was found that the fcc structure in the deposited Cu thin films was 〈1 1 1〉 oriented, which was reasonably explained by surface energy minimization and the selectivity of bombardment energy to the crystalline planes. The quantified analysis of interface mixing revealed that the diffusion of Cu atoms dominated the interface mixing, and the injection of incident Cu atoms resulted in the densification of phase near the film-substrate interface. More important, the distribution of atomic stress indicated that the compressive stress was mainly originated from the film-substrate interface, which might be attributed to the densification of interfacial phase at the initial stage of film deposition.

Temperature dependent surface and spectral modifications of nano V2O5 films

NASA Astrophysics Data System (ADS)

Manthrammel, M. Aslam; Fatehmulla, A.; Al-Dhafiri, A. M.; Alshammari, A. S.; Khan, Aslam

2017-03-01

Nanocrystalline V2O5 films have been deposited on glass substrates at 300°C substrate temperature using thermal evaporation technique and were subjected to thermal annealing at different temperatures 350, 400, and 550°C. X-ray diffraction (XRD) spectra exhibit sharper and broader characteristic peaks respectively indicating the rearrangement of nanocrystallite phases with annealing temperatures. Other phases of vanadium oxides started emerging with the rise in annealing temperature and the sample converted completely to VO2 (B) phase at 550°C annealing. FESEM images showed an increase in crystallite size with 350 and 400°C annealing temperatures followed by a decrease in crystallite size for the sample annealed at 550°C. Transmission spectra showed an initial redshift of the fundamental band edge with 350 and 400°C while a blue shift for the sample annealed at 550°C, which was in agreement with XRD and SEM results. The films exhibited smart window properties as well as nanorod growth at specific annealing temperatures. Apart from showing the PL and defect related peaks, PL studies also supported the observations made in the transmission spectra.

Catalytic properties of thermophilic lactate dehydrogenase and halophilic malate dehydrogenase at high temperature and low water activity.

PubMed

Hecht, K; Wrba, A; Jaenicke, R

1989-07-15

Thermophilic lactate dehydrogenases from Thermotoga maritima and Bacillus stearothermophilus are stable up to temperature limits close to the optimum growth temperature of their parent organisms. Their catalytic properties are anomalous in that Km shows a drastic increase with increasing temperature. At low temperatures, the effect levels off. Extreme halophilic malate dehydrogenase from Halobacterium marismortui exhibits a similar anomaly. Increasing salt concentration (NaCl) leads to an optimum curve for Km, oxaloacctate while Km, NADH remains constant. Previous claims that the activity of halophilic malate dehydrogenase shows a maximum at 1.25 M NaCl are caused by limiting substrate concentration; at substrate saturation, specific activity of halophilic malate dehydrogenase reaches a constant value at ionic strengths I greater than or equal to 1 M. Non-halophilic (mitochondrial) malate dehydrogenase shows Km characteristics similar to those observed for the halophilic enzyme. The drastic decrease in specific activity of the mitochondrial enzyme at elevated salt concentrations is caused by the salt-induced increase in rigidity of the enzyme, rather than gross structural changes.

Modification of Surface Density of a Porous Medium

NASA Technical Reports Server (NTRS)

Stackpoole, Margaret M. (Inventor); Espinoza, Christian (Inventor)

2016-01-01

A method for increasing density of a region of a porous, phenolic bonded ("PPB") body adjacent to a selected surface to increase failure tensile strength of the adjacent region and/or to decrease surface recession at elevated temperatures. When the surface-densified PPB body is brought together with a substrate, having a higher failure tensile strength, to form a composite body with a PPB body/substrate interface, the location of tensile failure is moved to a location spaced apart from the interface, the failure tensile strength of the PPB body is increased, and surface recession of the material at elevated temperature is reduced. The method deposits and allows diffusion of a phenolic substance on the selected surface. The PPB body and the substrate may be heated and brought together to form the composite body. The phenolic substance is allowed to diffuse into the PPB body, to volatilize and to cure, to provide a processed body with an increased surface density.

Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

NASA Astrophysics Data System (ADS)

Rosli, Z. M.; Kwan, W. L.; Juoi, J. M.

2016-07-01

Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (RN), and substrate temperature (TS). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % RN. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB2 phase within the coatings. The TS, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

Thermophilic anaerobic digestion in compact systems: investigations by modern microbiological techniques and mathematical simulation.

PubMed

Lübken, M; Wichern, M; Letsiou, I; Kehl, O; Bischof, F; Horn, H

2007-01-01

Thermophilic anaerobic digestion in compact systems can be an economical and ecological reasonable decentralised process technique, especially for rural areas. Thermophilic process conditions are important for a sufficient removal of pathogens. The high energy demand, however, can make such systems unfavourable in terms of energy costs. This is the case when low concentrated wastewater is treated or the system is operated at low ambient temperatures. In this paper we present experimental results of a compact thermophilic anaerobic system obtained with fluorescent in situ hybridisation (FISH) analysis and mathematical simulation. The system was operated with faecal sludge for a period of 135 days and with a model substrate consisting of forage and cellulose for a period of 60 days. The change in the microbial community due to the two different substrates treated could be well observed by the FISH analysis. The Anaerobic Digestion Model no. 1 (ADM1) was used to evaluate system performance at different temperature conditions. The model was extended to contribute to decreased methanogenic activity at lower temperatures and was used to calculate energy production. A model was developed to calculate the major parts of energy consumed by the digester itself at different temperature conditions. It was demonstrated by the simulation study that a reduction of the process temperature can lead to higher net energy yield. The simulation study additionally showed that the effect of temperature on the energy yield is higher when a substrate is treated with high protein content.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

PubMed

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

Comparison of [corrected] actin- and glass-supported phospholipid bilayer diffusion coefficients.

PubMed

Sterling, Sarah M; Dawes, Ryan; Allgeyer, Edward S; Ashworth, Sharon L; Neivandt, David J

2015-04-21

The formation of biomimetic lipid membranes has the potential to provide insights into cellular lipid membrane dynamics. The construction of such membranes necessitates not only the utilization of appropriate lipids, but also physiologically relevant substrate/support materials. The substrate materials employed have been shown to have demonstrable effects on the behavior of the overlying lipid membrane, and thus must be studied before use as a model cushion support. To our knowledge, we report the formation and investigation of a novel actin protein-supported lipid membrane. Specifically, inner leaflet lateral mobility of globular actin-supported DMPC (1,2-dimyristoyl-sn-glycero-3-phosphocholine) bilayers, deposited via the Langmuir-Blodgett/Langmuir Schaefer methodology, was investigated by z-scan fluorescence correlation spectroscopy across a temperature range of 20-44°C. The actin substrate was found to decrease the diffusion coefficient when compared to an identical membrane supported on glass. The depression of the diffusion coefficient occurred across all measured temperatures. These results indicated that the actin substrate exerted a direct effect on the fluidity of the lipid membrane and highlighted the fact that the choice of substrate/support is critical in studies of model lipid membranes. Copyright © 2015 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Temperature dependent droplet impact dynamics on flat and textured surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azar Alizadeh; Vaibhav Bahadur; Sheng Zhong

Droplet impact dynamics determines the performance of surfaces used in many applications such as anti-icing, condensation, boiling and heat transfer. We study impact dynamics of water droplets on surfaces with chemistry/texture ranging from hydrophilic to superhydrophobic and across a temperature range spanning below freezing to near boiling conditions. Droplet retraction shows very strong temperature dependence especially for hydrophilic surfaces; it is seen that lower substrate temperatures lead to lesser retraction. Physics-based analyses show that the increased viscosity associated with lower temperatures can explain the decreased retraction. The present findings serve to guide further studies of dynamic fluid-structure interaction at variousmore » temperatures.« less

Acidolysis and glyceride synthesis reactions using fatty acids with two Pseudomonas lipases having different substrate specificities.

PubMed

Kojima, Yuzo; Sakuradani, Eiji; Shimizu, Sakayu

2006-09-01

Enzymatic acidolysis and glyceride synthesis using polyunsaturated fatty acids (PUFAs) with lipases from Pseudomonas fluorescens HU380 (HU-lipase), P. fluorescens AK102 (AK-lipase), and Candida rugosa (CR-lipase) were studied. The acidolysis of triolein with eicosapentaenoic acid (EPA) or docosahexaenoic acid (DHA) in n-hexane was evaluated with lipases immobilized on Celite 545. HU-lipase showed the highest incorporation rate at a low temperature (10 degrees C) with either EPA or DHA as the acyl donor, and the rate decreased with increasing reaction temperature. At 45 degrees C, the rates for EPA and DHA were 7.1 and 0.5 relative to those at 10 degrees C, respectively. The EPA incorporation rate was even higher at a low temperature (10 degrees C), and the DHA incorporation rate increased with decreasing temperature. Although AK-lipase showed the reverse tendency for incorporation rate, the DHA incorporation rate increased with increasing reaction temperature with both PUFAs. HU-lipase reacted well with PUFAs such as DHA, EPA, arachidonic acid (AA), mead acid (MA), and dihomo-gamma-linolenic acid (DGLA) on acidolysis and glyceride synthesis. The reactivities of AK-lipase toward these PUFAs except for DGLA, i.e., MA, AA, EPA, and DHA, were low for both reactions. The unique substrate specificities of the lipases from the Pseudomonas strains will enable us to use these lipases for the modification of fats and oils containing PUFAs such as fish oil.

Plasma-Based Surface Modification and Corrosion in High Temperature Environments

DTIC Science & Technology

2009-02-05

supercritical water, molten salts, supercritical carbon dioxide (KAPL), and helium have been designed and built Room temperature corrosion tests for...coatings such as diamond-like carbon (DLC) and Si-DLC, performed at < 5kV) 4 Energetic ion mixing of thin nano-multilayers Enhancing coating-substrate...Nitrogen ion implantation of 17-7PH stainless steel (with Alison Gas Turbines ) Also a 11% decrease in erosion rate for the N+ implanted sample

Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate

NASA Astrophysics Data System (ADS)

Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K.; Kębłowski, A.; Martyniuk, P.; Piotrowski, J.; Rogalski, A.

2018-02-01

The growth of undoped GaSb epilayers on GaAs (0 0 1) substrates with 2° offcut towards 〈1 1 0〉, by molecular beam epitaxy system (MBE) at low growth temperature is reported. The strain due to the lattice mismatch of 7.78% is relieved spontaneously at the interface by using interfacial misfit array (IMF) growth mode. Three approaches of this technique are investigated. The difference consists in the steps after the growth of GaAs buffer layer. These steps are the desorption of arsenic from the GaAs surface, and the cooling down to the growth temperature, under or without antimony flux. The X-ray analysis and the transmission electron microscopy point out that desorption of arsenic followed by the substrate temperature decreasing under no group V flux leads to the best structural and crystallographic properties in the GaSb layer. It is found that the 2 μm-thick GaSb is 99.8% relaxed, and that the strain is relieved by the formation of a periodic array of 90° pure-edge dislocations along the [1 1 0] direction with a periodicity of 5.6 nm.

Effect of Elevated Atmospheric CO2 and Temperature on the Disease Severity of Rocket Plants Caused by Fusarium Wilt under Phytotron Conditions.

PubMed

Chitarra, Walter; Siciliano, Ilenia; Ferrocino, Ilario; Gullino, Maria Lodovica; Garibaldi, Angelo

2015-01-01

The severity of F. oxysporum f.sp. conglutinans on rocket plants grown under simulated climate change conditions has been studied. The rocket plants were cultivated on an infested substrate (4 log CFU g-1) and a non-infested substrate over three cycles. Pots were placed in six phytotrons in order to simulate different environmental conditions: 1) 400-450 ppm CO2, 18-22°C; 2) 800-850 ppm CO2, 18-22°C; 3) 400-450 ppm CO2, 22-26°C, 4) 800-850 ppm CO2, 22-26°C, 5) 400-450 ppm CO2, 26-30°C; 6) 800-850 ppm CO2, 26-30°C. Substrates from the infested and control samples were collected from each phytotron at 0, 60 and 120 days after transplanting. The disease index, microbial abundance, leaf physiological performances, root exudates and variability in the fungal profiles were monitored. The disease index was found to be significantly influenced by higher levels of temperature and CO2. Plate counts showed that fungal and bacterial development was not affected by the different CO2 and temperature levels, but a significant decreasing trend was observed from 0 up to 120 days. Conversely, the F. oxysporum f.sp. conglutinans plate counts did not show any significantly decrease from 0 up to 120 days. The fungal profiles, evaluated by means of polymerase chain reaction denaturing gradient gel electrophoresis (PCR-DGGE), showed a relationship to temperature and CO2 on fungal diversity profiles. Different exudation patterns were observed when the controls and infested plants were compared, and it was found that both CO2 and temperature can influence the release of compounds from the roots of rocket plants. In short, the results show that global climate changes could influence disease incidence, probably through plant-mediated effects, caused by soilborne pathogens.

Thermally enhanced in situ bioremediation of groundwater contaminated with chlorinated solvents - A field test.

PubMed

Němeček, Jan; Steinová, Jana; Špánek, Roman; Pluhař, Tomáš; Pokorný, Petr; Najmanová, Petra; Knytl, Vladislav; Černík, Miroslav

2018-05-01

In situ bioremediation (ISB) using reductive dechlorination is a widely accepted but relatively slow approach compared to other technologies for the treatment of groundwater contaminated by chlorinated ethenes (CVOCs). Due to the known positive kinetic effect on microbial metabolism, thermal enhancement may be a viable means of accelerating ISB. We tested thermally enhanced ISB in aquifers situated in sandy saprolite and underlying fractured granite. The system comprised pumping, heating and subsequent injection of contaminated groundwater aiming at an aquifer temperature of 20-30°C. A fermentable substrate (whey) was injected in separate batches. The test was monitored using hydrochemical and molecular tools (qPCR and NGS). The addition of the substrate and increase in temperature resulted in a rapid increase in the abundance of reductive dechlorinators (e.g., Dehalococcoides mccartyi, Dehalobacter sp. and functional genes vcrA and bvcA) and a strong increase in CVOC degradation. On day 34, the CVOC concentrations decreased by 87% to 96% in groundwater from the wells most affected by the heating and substrate. On day 103, the CVOC concentrations were below the LOQ resulting in degradation half-lives of 5 to 6days. Neither an increase in biomarkers nor a distinct decrease in the CVOC concentrations was observed in a deep well affected by the heating but not by the substrate. NGS analysis detected Chloroflexi dechlorinating genera (Dehalogenimonas and GIF9 and MSBL5 clades) and other genera capable of anaerobic metabolic degradation of CVOCs. Of these, bacteria of the genera Acetobacterium, Desulfomonile, Geobacter, Sulfurospirillum, Methanosarcina and Methanobacterium were stimulated by the substrate and heating. In contrast, groundwater from the deep well (affected by heating only) hosted representatives of aerobic metabolic and aerobic cometabolic CVOC degraders. The test results document that heating of the treated aquifer significantly accelerated the treatment process but only in the case of an abundant substrate. Copyright © 2017. Published by Elsevier B.V.

Drug transport by reconstituted P-glycoprotein in proteoliposomes. Effect of substrates and modulators, and dependence on bilayer phase state.

PubMed

Lu, P; Liu, R; Sharom, F J

2001-03-01

The P-glycoprotein multidrug transporter (Pgp) is an active efflux pump for chemotherapeutic drugs, natural products and hydrophobic peptides. Pgp is envisaged as a 'hydrophobic vacuum cleaner', and drugs are believed to gain access to the substrate binding sites from within the membrane, rather than from the aqueous phase. The intimate association of both Pgp and its substrates with the membrane suggests that its function may be regulated by the biophysical properties of the lipid bilayer. Using the high affinity fluorescent substrate tetramethylrosamine (TMR), we have monitored, in real time, transport in proteoliposomes containing reconstituted Pgp. The TMR concentration gradient generated by Pgp was collapsed by the addition of either the ATPase inhibitor, vanadate, or Pgp modulators. TMR transport by Pgp obeyed Michaelis--Menten kinetics with respect to both of its substrates. The Km for ATP was 0.48 mM, close to the K(m) for ATP hydrolysis, and the K(m) for TMR was 0.3 microM. TMR transport was inhibited in a concentration-dependent fashion by verapamil and cyclosporin A, and activated (probably by a positive allosteric effect) by the transport substrate colchicine. TMR transport by Pgp reconstituted into proteoliposomes composed of two synthetic phosphatidylcholines showed a highly unusual biphasic temperature dependence. The rate of TMR transport was relatively high in the rigid gel phase, reached a maximum at the melting temperature of the bilayer, and then decreased in the fluid liquid crystalline phase. This pattern of temperature dependence suggests that the rate of drug transport by Pgp may be dominated by partitioning of drug into the bilayer.

Effect of nanoparticle size on sessile droplet contact angle

NASA Astrophysics Data System (ADS)

Munshi, A. M.; Singh, V. N.; Kumar, Mukesh; Singh, J. P.

2008-04-01

We report a significant variation in the static contact angle measured on indium oxide (IO) nanoparticle coated Si substrates that have different nanoparticle sizes. These IO nanoparticles, which have well defined shape and sizes, were synthesized by chemical vapor deposition in a horizontal alumina tube furnace. The size of the IO nanoparticles was varied by changing the source material, substrate temperature, and the deposition time. A sessile droplet method was used to determine the macroscopic contact angle on these IO nanoparticle covered Si substrate using two different liquids: de-ionized water and diethylene glycol (DEG). It was observed that contact angle depends strongly on the nanoparticle size. The contact angle was found to vary from 24° to 67° for de-ionized water droplet and from 15° to 60° for DEG droplet, for the nanoparticle sizes varying from 14 to 620 nm. The contact angle decreases with a decrease in the particles size. We have performed a theoretical analysis to determine the dependence of contact angle on the nanoparticle size. This formulation qualitatively shows a similar trend of decrease in the contact angle with a decrease in nanoparticle size. Providing a rough estimate of nanoparticle size by sessile droplet contact angle measurement is the novelty in this work.

Characterization and purification of polyphenol oxidase from artichoke (Cynara scolymus L.).

PubMed

Dogan, Serap; Turan, Yusuf; Ertürk, Hatibe; Arslan, Oktay

2005-02-09

In this study, the polyphenol oxidase (PPO) of artichoke (Cynara scolymus L.) was first purified by a combination of (NH(4))(2)SO(4) precipitation, dialysis, and a Sepharose 4B-L-tyrosine-p-aminobenzoic acid affinity column. At the end of purification, 43-fold purification was achieved. The purified enzyme migrated as a single band on sodium dodecyl sulfate-polyacrylamide gel electrophoresis. Polyacrylamide gel electrophoresis indicated that PPO had a 57 kDa molecular mass. Second, the contents of total phenolic and protein of artichoke head extracts were determined. The total phenolic content of artichoke head was determined spectrophotometrically according to the Folin-Ciocalteu procedure and was found to be 425 mg 100 g(-1) on a fresh weight basis. Protein content was determined according to Bradford method. Third, the effects of substrate specificity, pH, temperature, and heat inactivation were investigated on the activity of PPO purified from artichoke. The enzyme showed activity to 4-methylcatechol, pyrogallol, catechol, and L-dopa. No activity was detected toward L-tyrosine, resorsinol, and p-cresol. According to V(max)/K(m) values, 4-methylcatechol (1393 EU min(-1) mM(-1)) was the best substrate, followed by pyrogallol (1220 EU min(-1) mM(-1)), catechol (697 EU min(-1) mM(-1)), and L-dopa (102 EU min(-1) mM(-1)). The optimum pH values for PPO were 5.0, 8.0, and 7.0 using 4-methylcatechol, pyrogallol, and catechol as substrate, respectively. It was found that optimum temperatures were dependent on the substrates studied. The enzyme activity decreased due to heat denaturation of the enzyme with increasing temperature and inactivation time for 4-methylcatechol and pyrogallol substrates. However, all inactivation experiments for catechol showed that the activity of artichoke PPO increased with mild heating, reached a maximum, and then decreased with time. Finally, inhibition of artichoke PPO was investigated with inhibitors such as L-cysteine, EDTA, ascorbic acid, gallic acid, d,L-dithiothreitol, tropolone, glutathione, sodium azide, benzoic acid, salicylic acid, and 4-aminobenzoic acid using 4-methylcatechol, pyrogallol, and catechol as substrate. The presence of EDTA, 4-aminobenzoic acid, salicylic acid, gallic acid, and benzoic acid did not cause the inhibition of artichoke PPO. A competitive-type inhibition was obtained with sodium azide, L-cysteine, and d,L-dithiothreitol inhibitors using 4-methylcatechol as substrate; with L-cysteine, tropolone, d,L-dithiothreitol, ascorbic acid, and sodium azide inhibitors using pyrogallol as substrate; and with L-cysteine, tropolone, d,L-dithiotreitol, and ascorbic acid inhibitors using catechol as a substrate. A mixed-type inhibition was obtained with glutathione inhibitor using 4-methylcatechol as a substrate. A noncompetitive inhibition was obtained with tropolone and ascorbic acid inhibitors using 4-methylcatechol as substrate, with glutathione inhibitor using pyrogallol as substrate, and with glutathione and sodium azide inhibitors using catechol as substrate. From these results, it can be said that the most effective inhibitor for artichoke PPO is tropolone. Furthermore, it was found that the type of inhibition depended on the origin of the PPO studied and also on the substrate used.

Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wofford, Joseph M.; Speck, Florian; Seyller, Thomas; Lopes, Joao Marcelo J.; Riechert, Henning

2016-07-01

The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al2O3(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

Pyroelectric property of SrTiO3/Si ferroelectric-semiconductor heterojunctions near room temperature

NASA Astrophysics Data System (ADS)

Bai, Gang; Wu, Dongmei; Xie, Qiyun; Guo, Yanyan; Li, Wei; Deng, Licheng; Liu, Zhiguo

2015-12-01

A nonlinear thermodynamic formalism is developed to calculate the pyroelectric property of epitaxial single domain SrTiO3/Si heterojunctions by taking into account the thermal expansion misfit strain at different temperatures. It has been demonstrated that the crucial role was played by the contribution associated with the structure order parameter arising from the rotations of oxygen octahedral on pyroelectricity. A dramatic decrease in the pyroelectric coefficient due to the strong coupling between the polarization and the structure order parameter is found at ferroelectric TF1-TF2 phase transition. At the same time, the thermal expansion mismatch between film and substrate is also found to provide an additional weak decrease of pyroelectricity. The analytic relationship of the out-of-plane pyroelectric coefficient and dielectric constant of ferroelectric phases by considering the thermal expansion of thin films and substrates has been determined for the first time. Our research provides another avenue for the investigation of the pyroelectric effects of ferroic thin films, especially, such as antiferroelectric and multiferroic materials having two or more order parameters.

Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

NASA Astrophysics Data System (ADS)

Li, Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

2013-04-01

Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al2O3, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al2O3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

Scaling effects in sodium zirconium silicate phosphate (Na 1+ xZr 2Si xP 3- xO 12) ion-conducting thin films

DOE PAGES

Ihlefeld, Jon F.; Gurniak, Emily; Jones, Brad H.; ...

2016-05-04

Preparation of sodium zirconium silicate phosphate (NaSICon), Na 1+xZr 2Si xP 3–xO 12 (0.25 ≤ x ≤ 1.0), thin films has been investigated via a chemical solution approach on platinized silicon substrates. Increasing the silicon content resulted in a reduction in the crystallite size and a reduction in the measured ionic conductivity. Processing temperature was also found to affect microstructure and ionic conductivity with higher processing temperatures resulting in larger crystallite sizes and higher ionic conductivities. The highest room temperature sodium ion conductivity was measured for an x = 0.25 composition at 2.3 × 10 –5 S/cm. In conclusion, themore » decreasing ionic conductivity trends with increasing silicon content and decreasing processing temperature are consistent with grain boundary and defect scattering of conducting ions.« less

Hall effect of copper nitride thin films

NASA Astrophysics Data System (ADS)

Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

2005-08-01

The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.

Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching withmore » temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.« less

Substrate composition and moisture in composting source-separated human faeces and food waste.

PubMed

Niwagaba, C; Nalubega, M; Vinnerås, B; Sundberg, C; Jönsson, H

2009-04-14

The composting of a faeces/ash mixture and food waste in relative proportions of 1:0, 1:1 and 1:3 was studied in three successive experiments conducted in Kampala, Uganda in 216 L reactors insulated with 75 mm styrofoam or not insulated. The faeces/ash mixture alone exceeded 50 degrees C for < or = 12 days in insulated reactors, but did not reach or maintain 50 degrees C in non-insulated reactors. Inclusion of food waste kept temperatures above 50 degrees C for over two weeks in insulated reactors except when the substrate was too wet. Escherichia coli and total coliform concentrations decreased below detection in material that exceeded 50 degrees C for at least six days. Enterococcus spp. decreased below detection in material that exceeded 50 degrees C for at least two weeks, but remained detectable after 1.5 months in material that exceeded 50 degrees C for less than two weeks, suggesting that a period of at least two weeks above 50 degrees C, combined with mixing, is needed to achieve sanitation. Initially substrates that were too wet proved a challenge to composting and ways of decreasing substrate moisture should be investigated. The results obtained are applicable to the management of small- to medium-scale composting of faeces/ash and food waste at household and institution levels, e.g. schools and restaurants.

Sliding and rolling behavior of water droplets on an ordered nanoball matrix fluorocarbon polymer layer under simulated weather conditions

NASA Astrophysics Data System (ADS)

Jiang, Xieqiang; Wan, Jie; Han, Haoxu; Wang, Yiping; Li, Kang; Wang, Qingjun

2018-09-01

Ordered nanoball matrix fluorocarbon polymer layers were produced with two different fluorocarbon polymers on an anodized aluminum oxide (AAO) surface. These treated surfaces each exhibited hydrophobicity or superhydrophobicity. The dynamic behavior of a droplet sliding down these surfaces was captured by high-speed photography under simulated weather conditions including at room temperature (25 °C) and low temperature (5 °C) with various relative humidities (30%-80%). By analyzing the trajectory of a marker in the captured video frame-by-frame, we distinguished the slipping and rolling behaviors and analyzed the internal fluidity by calculating the ratio of these two motions. Both the pore diameters of the substrate matrix and the environmental conditions play a dominant role in the resultant sliding acceleration of a water droplet. At room temperature (25 °C) and 30% relative humidity, the sliding acceleration of the droplet on the fluoropolymer layer decreased by 0.5 m·s-2 -0.6 m·s-2 as the pore diameters of the underlying AAO substrates increased. The sliding acceleration underwent a 25%-50% decrease under extreme environmental conditions (5 °C and 80% RH). These phenomena proved that a wetting transition from the Cassie-Baxter model to the Wenzel model can partially occur under various weather conditions.

Effect of temperature on series resistance of organic/inorganic semiconductor junction diode

NASA Astrophysics Data System (ADS)

Tripathi, Udbhav; Kaur, Ramneek; Bharti, Shivani

2016-05-01

The paper reports the fabrication and characterization of CuPc/n-Si organic/inorganic semiconductor diode. Copper phthalocyanine, a p-type organic semiconductor layer has been deposited on Si substrate by thermal evaporation technique. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Temperature dependence of the schottky diode parameters has been studied and discussed in the temperature range, 303 K to 353 K. Series resistance of the diode has been determined using Cheung's function method. Series resistance decreases with increase in temperature. The large value of series resistance at low temperature has been explained on the basis of barrier inhomogeneities in the diode.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Bivas; Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; Lawrence, Samantha K.

High hardness TiAlN alloys for wear-resistant coatings exhibit limited lifetimes at elevated temperatures due to a cubic-AlN to hexagonal-AlN phase transformation that leads to decreasing hardness. We enhance the hardness (up to 46 GPa) and maximum operating temperature (up to 1050 °C) of TiAlN-based coatings by alloying with scandium nitride to form both an epitaxial TiAlScN alloy film and epitaxial rocksalt TiN/(Al,Sc)N superlattices on MgO substrates. The superlattice hardness increases with decreasing period thickness, which is understood by the Orowan bowing mechanism of the confined layer slip model. These results make them worthy of additional research for industrial coating applications.

An algorithm for temperature correcting substrate moisture measurements: aligning substrate moisture responses with environmental drivers in polytunnel-grown strawberry plants

NASA Astrophysics Data System (ADS)

Goodchild, Martin; Janes, Stuart; Jenkins, Malcolm; Nicholl, Chris; Kühn, Karl

2015-04-01

The aim of this work is to assess the use of temperature corrected substrate moisture data to improve the relationship between environmental drivers and the measurement of substrate moisture content in high porosity soil-free growing environments such as coir. Substrate moisture sensor data collected from strawberry plants grown in coir bags installed in a table-top system under a polytunnel illustrates the impact of temperature on capacitance-based moisture measurements. Substrate moisture measurements made in our coir arrangement possess the negative temperature coefficient of the permittivity of water where diurnal changes in moisture content oppose those of substrate temperature. The diurnal substrate temperature variation was seen to range from 7° C to 25° C resulting in a clearly observable temperature effect in substrate moisture content measurements during the 23 day test period. In the laboratory we measured the ML3 soil moisture sensor (ThetaProbe) response to temperature in Air, dry glass beads and water saturated glass beads and used a three-phase alpha (α) mixing model, also known as the Complex Refractive Index Model (CRIM), to derive the permittivity temperature coefficients for glass and water. We derived the α value and estimated the temperature coefficient for water - for sensors operating at 100MHz. Both results are good agreement with published data. By applying the CRIM equation with the temperature coefficients of glass and water the moisture temperature coefficient of saturated glass beads has been reduced by more than an order of magnitude to a moisture temperature coefficient of

Method for removing semiconductor layers from salt substrates

DOEpatents

Shuskus, Alexander J.; Cowher, Melvyn E.

1985-08-27

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Natural printed silk substrate circuit fabricated via surface modification using one step thermal transfer and reduction graphene oxide

NASA Astrophysics Data System (ADS)

Cao, Jiliang; Huang, Zhan; Wang, Chaoxia

2018-05-01

Graphene conductive silk substrate is a preferred material because of its biocompatibility, flexibility and comfort. A flexible natural printed silk substrate circuit was fabricated by one step transfer of graphene oxide (GO) paste from transfer paper to the surface of silk fabric and reduction of the GO to reduced graphene oxide (RGO) using a simple hot press treatment. The GO paste was obtained through ultrasonic stirring exfoliation under low temperature, and presented excellent printing rheological properties at high concentration. The silk fabric was obtained a surface electric resistance as low as 12.15 KΩ cm-1, in the concentration of GO 50 g L-1 and hot press at 220 °C for 120 s. Though the whiteness and strength decreased with the increasing of hot press temperature and time slowly, the electric conductivity of RGO surface modification silk substrate improved obviously. The surface electric resistance of RGO/silk fabrics increased from 12.15 KΩ cm-1 to 18.05 KΩ cm-1, 28.54 KΩ cm-1 and 32.53 KΩ cm-1 after 10, 20 and 30 washing cycles, respectively. The results showed that the printed silk substrate circuit has excellent washability. This process requires no chemical reductant, and the reduction efficiency and reduction degree of GO is high. This time-effective and environmentally-friendly one step thermal transfer and reduction graphene oxide onto natural silk substrate method can be easily used to production of reduced graphene oxide (RGO) based flexible printed circuit.

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Mobility-dependent low-frequency noise in graphene field-effect transistors.

PubMed

Zhang, Yan; Mendez, Emilio E; Du, Xu

2011-10-25

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300 and 30 K. We have found that the noise amplitude away from the Dirac point can be described by a generalized Hooge's relation in which the Hooge parameter α(H) is not constant but decreases monotonically with the device's mobility, with a universal dependence that is sample and temperature independent. The value of α(H) is also affected by the dynamics of disorder, which is not reflected in the DC transport characteristics and varies with sample and temperature. We attribute the diverse behavior of gate voltage dependence of the noise amplitude to the relative contributions from various scattering mechanisms, and to potential fluctuations near the Dirac point caused by charge carrier inhomogeneity. The higher carrier mobility of suspended graphene devices accounts for values of 1/f noise significantly lower than those observed in on-substrate graphene devices and most traditional electronic materials.

Continuous production of lipase-catalyzed biodiesel in a packed-bed reactor: optimization and enzyme reuse study.

PubMed

Chen, Hsiao-Ching; Ju, Hen-Yi; Wu, Tsung-Ta; Liu, Yung-Chuan; Lee, Chih-Chen; Chang, Cheng; Chung, Yi-Lin; Shieh, Chwen-Jen

2011-01-01

An optimal continuous production of biodiesel by methanolysis of soybean oil in a packed-bed reactor was developed using immobilized lipase (Novozym 435) as a catalyst in a tert-butanol solvent system. Response surface methodology (RSM) and Box-Behnken design were employed to evaluate the effects of reaction temperature, flow rate, and substrate molar ratio on the molar conversion of biodiesel. The results showed that flow rate and temperature have significant effects on the percentage of molar conversion. On the basis of ridge max analysis, the optimum conditions were as follows: flow rate 0.1 mL/min, temperature 52.1°C, and substrate molar ratio 1 : 4. The predicted and experimental values of molar conversion were 83.31 ± 2.07% and 82.81 ± .98%, respectively. Furthermore, the continuous process over 30 days showed no appreciable decrease in the molar conversion. The paper demonstrates the applicability of using immobilized lipase and a packed-bed reactor for continuous biodiesel synthesis.

Projection par plasma de depots de dioxyde de titane: Contribution a l'etude de leurs microstructures et proprietes electriques

NASA Astrophysics Data System (ADS)

Branland, Nadege

2002-04-01

The aim of this PhD work is, thanks to particle parameters (velocity and temperature) characterization, to try to understand the influence of plasma spray parameters on titania coating microstructures and the influence of the latter one on their electrical resistivity, for the same substrate conditions. The experimental approach has consisted in using two plasma spraying processes (Arc plasma spraying and Inductive plasma spraying) which have permitted to obtain a broad range of particle velocities and temperatures leading to coatings with specific microstructures. Despite the stoichiometry of the starting powder, all coatings obtained were grey, the oxygen loss increasing with the particle temperature. Isolating the stoichiometry influence has permitted to show that the decrease of the coatings electrical resistivity is especially due to the decrease of the number of bad interlamellar contacts.

Studies on modification of ZnO sol-gel spin coated on flexible substrate at low temperature: Effect of time exposure

NASA Astrophysics Data System (ADS)

Kamardin, Ili Liyana Khairunnisa; Ainuddin, Ainun Rahmahwati

2017-04-01

Transparent Conducting Oxide (TCO) Film has been chosen as flexible substrate recently in the application of a device. One of the TCO mostly used is ITO/PET substrates. Through this communication, the effect of time exposure of ZnO thin film by modified sol-gel deposited on flexible substrates was investigated. 0.75 M of NaOH and C6H8O7 were dropped directly into precursor solution right before aging process in order to modified precursor solution environment condition. x-ray diffraction pattern recorded plane (100) and (101) as preferential growth orientation. The (101) plane was selected to calculate the average crystallite. The atomic force microscopy indicated RMS value for NaOH samples increased with time exposure. Meanwhile, for C6H8O7 samples decreased with hot water treatment time exposure.

Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

NASA Astrophysics Data System (ADS)

Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

2018-03-01

Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.

Using Group-Inquiry to Study Differing Reaction Conditions in the E2 Elimination of Cyclohexyl Halides

ERIC Educational Resources Information Center

Long, Robert D.

2012-01-01

In this experiment, students individually conduct one of several variations of an E2 dehydrohalogenation reaction on a cyclohexyl halide substrate for 30 min, which is sufficient only for a partial reaction to occur. The variations examine reaction conditions including different leaving groups, decreased reaction temperature, or reduced base…

Inoculation of sphagnum-based soil substrate with entomopathogenic fungus Isaria fumosorosea (Hypocreales: Cordycipitaceae)

NASA Astrophysics Data System (ADS)

Zemek, Rostislav; Konopická, Jana; Bohatá, Andrea

2018-04-01

Convenient ecological alternative to broad-spectrum chemical pesticides is the utilization of natural enemies, like predators, parasitoids and microorganisms. A substantial number of microbial biopesticides based on entomopathogenic fungi have been developed worldwide since 1960s. Beauveria bassiana (Balsamo-Crivelli) Vuillemin, Metarhizium anisopliae (Metchnikoff) Sorokin, Isaria fumosorosea (Wize), and B. brongniartii (Saccardo) Petch are the most common species used in commercially produced mycopesticides. Besides direct biological pest control, these fungi could be also used in preventive application programs, particularly in ornamental or nursery plants to provide better control against pests. The aim of the present study was to investigate potential of pre-colonization of sphagnum-based soil substrate with I. fumosorosea strain CCM 8367 which was found earlier to be highly virulent against several pest species. We developed simple laboratory apparatus for application of fungal spore suspension into the substrate. Suspension was prepared from blastospores obtained by submerged cultivation on potato dextrose broth (PDB) medium using an orbital shaker. Inoculated substrate was placed into plastic bags and stored at constant temperature for six months. Every month, samples were analyzed for concentration of colony forming units (CFU) by elution and selective medium technique. The results showed that at 20°C the fungus successfully colonized the soil substrate and persisted there although the mean concentration slightly decreased from 5.89×104 to 2.76×104 CFU per milliliter of substrate during the experiment. Temperature 30°C had negative effect on survival of the fungus and is not recommended for long-term storage of pre-inoculated substrate. We can conclude that I. fumosorosea-colonized substrate can be convenient for preventive and permanent protection of various plants against soil-dwelling pests.

Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer.

PubMed

Kimura, Junichi; Takuwa, Itaru; Matsushima, Masaaki; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Shiraishi, Takahisa; Konno, Toyohiko J; Shibata, Tatsuo; Osada, Minoru; Sasaki, Takayoshi; Funakubo, Hiroshi

2016-02-15

To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)cSrRuO3/Ca2Nb3O10(-) nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (εr) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that εr of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm(2) for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10(-) nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

Kinetic and microstructural study of titanium nitride deposited by laser chemical vapor deposition

NASA Astrophysics Data System (ADS)

Egland, Keith Maynard

Titanium nitride (TiN) films were deposited onto Ti-6Al-4V substrates by laser chemical vapor deposition using a cw COsb2 laser and TiClsb4,\\ Nsb2, and Hsb2 reactant gases. In-situ laser induced fluorescence (LIF) and multi-wavelength pyrometry determined relative titanium gas phase atomic number density and deposition temperature, respectively. Deposited films were yellow to gold in color. Transmission electron microscopy on one sample revealed a face-centered cubic structure with a lattice parameter (0.4237 nm) expected for TiN. Auger electron spectroscopy found substoichiometric compositions with a N/Ti ratio between 0.7 and 0.9. Variables decreasing grain size (lower temperature, higher TiClsb4 input) decreased the N/Ti ratio. Higher Nsb2 input increased stoichiometry, while larger Hsb2 input decreased stoichiometry. The deposit substoichiometry is believed to be caused by diffusion of nitrogen through TiN grain boundaries to the titanium alloy substrate. The morphology starts as a dense polycrystalline structure evolving into a columnar structure having facets or nodules at the surface with crystallite sizes ranging from 10-1000 nm. TiClsb4 input had a inverse correlation with crystallite size, while Nsb2:Hsb2 ratio had minimal effect; the crystallite size (G) varied exponentially with temperature (T) for a given irradiation time, i.e., G = C exp (-28000/T), with constant C reflecting substrate roughness and gas composition. Microhardness tests revealed substrate contributions; nevertheless, films appeared to have a minimum hardness of 2000 Hsbv. The deposition apparent activation energy was calculated as 122 ± 9 kJ/mole using growth rates measured by film height and 117 ± 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above Nsb2 and Hsb2 levels of 1.25% and below TiClsb4 input of 4.5%, the growth rate has a half-order dependence on nitrogen and a linear dependence on hydrogen and is approximated by$r = {{kPsb{TiClsb4}Psb{Hsb2}Psbsp{Nsb2}{1/2}exp≤ft({{-}Esb{a}/ {RT}right)}/{1 + Psb{Ar}}}}.Since nitrogen positively affects growth rate (when added to a TiClsb4+Hsb2 mixture), stepwise reduction of TiClsb4 to Ti by hydrogen does not occur. NHsb{x} complexes are clearly involved in the growth mechanism; a likely combination of rate determining steps is the formation of NH and the initial reduction of TiClsb4$ by hydrogen.

Rubber friction: role of the flash temperature

NASA Astrophysics Data System (ADS)

Persson, B. N. J.

2006-08-01

When a rubber block is sliding on a hard rough substrate, the substrate asperities will exert time-dependent deformations of the rubber surface resulting in viscoelastic energy dissipation in the rubber, which gives a contribution to the sliding friction. Most surfaces of solids have roughness on many different length scales, and when calculating the friction force it is necessary to include the viscoelastic deformations on all length scales. The energy dissipation will result in local heating of the rubber. Since the viscoelastic properties of rubber-like materials are extremely strongly temperature dependent, it is necessary to include the local temperature increase in the analysis. At very low sliding velocity the temperature increase is negligible because of heat diffusion, but already for velocities of order 10-2 m s-1 the local heating may be very important. Here I study the influence of the local heating on the rubber friction, and I show that in a typical case the temperature increase results in a decrease in rubber friction with increasing sliding velocity for v>0.01 m s-1. This may result in stick-slip instabilities, and is of crucial importance in many practical applications, e.g. for tyre-road friction and in particular for ABS braking systems.

Low-Temperature Desorption of N2O from NO on Rutile TiO2(110)-1x1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Boseong; Li, Zhenjun; Kay, Bruce D.

2014-05-08

We find that NO dosed on rutile TiO2(110)-1×1 at substrate temperatures as low as 50 K readily reacts to produce N2O which desorbs promptly from the surface leaving an oxygen adatom behind. The desorption rate of N2O reaches a maximum value after 1 – 2 sec at an NO flux of 1.2 ×1014 NO/cm2∙sec and then decreases rapidly as the initially clean, reduced TiO2(110) surface with ~5% oxygen vacancies (VO’s) becomes covered with oxygen adatoms and unreacted NO. The maximum desorption rate is also found to increase as the substrate temperature is raised up to about 100 K. Interestingly, themore » N2O desorption during the low-temperature (LT) NO dose is strongly suppressed when molecular oxygen is predosed, whereas it persists on the surface with VO’s passivated by surface hydroxyls. Our results show that the surface charge, not the VO sites, plays a dominant role in the LT N2O desorption induced by a facile NO reduction at such low temperatures.« less

Adaption of a microwave plasma source for low temperature diamond deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulczynski, M.; Reinhard, D.K.; Asmussen, J.

1996-12-31

This report describes the adaption of a microwave plasma reactor for low temperature diamond deposition. The reactor is of a resonant cavity design. Three approaches have been taken to establish plasma conditions for diamond deposition on substrates which are in the range of 450 C to 550 C. In the first, the substrate is heated only by the plasma and the source is operated at pressures on the order of 10 torr, such that the volumetric power density is sufficiently low to achieve these temperatures. In the second, the plasma pressure and microwave input power were reduced and a substratemore » heater was used to maintain the desired deposition temperatures. In the third approach, the plasma pressure and microwave power were increased and a substrate cooler was used to keep the substrate temperature in the desired range. Reactor performance and deposition results will be described for the three configurations. For the plasma heated substrate assembly, substrate dimensions were up to 10 cm diameter. For the heated and cooled substrate assemblies, substrate dimensions were up to 7.5 cm diameter. Deposition results on a variety of substrates will be reported including low-temperature substrates such as borosilicate glass.« less

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

NASA Astrophysics Data System (ADS)

Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

2016-01-01

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Surface modification of several dental substrates by non-thermal, atmospheric plasma brush.

PubMed

Chen, Mingsheng; Zhang, Ying; Sky Driver, M; Caruso, Anthony N; Yu, Qingsong; Wang, Yong

2013-08-01

The purpose of this study was to reveal the effectiveness of non-thermal atmospheric plasma brush in surface wettability and modification of four dental substrates. Specimens of dental substrates including dentin, enamel, and two composites Filtek Z250, Filtek LS Silorane were prepared (∼2mm thick, ∼10mm diameter). The prepared surfaces were treated for 5-45s with a non-thermal atmospheric plasma brush working at temperatures from 36 to 38°C. The plasma-treatment effects on these surfaces were studied with contact-angle measurement, X-ray photoemission spectroscopy (XPS) and scanning electron microscopy (SEM). The non-thermal atmospheric argon plasma brush was very efficient in improving the surface hydrophilicity of four substrates studied. The results indicated that water contact angle values decreased considerably after only 5s plasma treatment of all these substrates. After 30s treatment, the values were further reduced to <5°, which was close to a value for super hydrophilic surfaces. XPS analysis indicated that the percent of elements associated with mineral in dentin/enamel or fillers in the composites increased. In addition, the percent of carbon (%C) decreased while %O increased for all four substrates. As a result, the O/C ratio increased dramatically, suggesting that new oxygen-containing polar moieties were formed on the surfaces after plasma treatment. SEM surface images indicated that no significant morphology change was induced on these dental substrates after exposure to plasmas. Without affecting the bulk properties, a super-hydrophilic surface could be easily achieved by the plasma brush treatment regardless of original hydrophilicity/hydrophobicity of dental substrates tested. Copyright © 2013 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Surface modification of several dental substrates by non-thermal, atmospheric plasma brush

PubMed Central

Chen, Mingsheng; Zhang, Ying; Driver, M. Sky; Caruso, Anthony N.; Yu, Qingsong; Wang, Yong

2013-01-01

Objective The purpose of this study was to reveal the effectiveness of non-thermal atmospheric plasma brush in surface wettability and modification of four dental substrates. Methods Specimens of dental substrates including dentin, enamel, and two composites Filtek Z250, Filtek LS Silorane were prepared (~2 mm thick, ~10 mm diameter). The prepared surfaces were treated for 5–45 s with a non-thermal atmospheric plasma brush working at temperatures from 36 to 38 °C. The plasma-treatment effects on these surfaces were studied with contact-angle measurement, X-ray photoemission spectroscopy (XPS) and scanning electron microscopy (SEM). Results The non-thermal atmospheric argon plasma brush was very efficient in improving the surface hydrophilicity of four substrates studied. The results indicated that water contact angle values decreased considerably after only 5 s plasma treatment of all these substrates. After 30 s treatment, the values were further reduced to <5°, which was close to a value for super hydrophilic surfaces. XPS analysis indicated that the percent of elements associated with mineral in dentin/enamel or fillers in the composites increased. In addition, the percent of carbon (%C) decreased while %O increased for all four substrates. As a result, the O/C ratio increased dramatically, suggesting that new oxygen-containing polar moieties were formed on the surfaces after plasma treatment. SEM surface images indicated that no significant morphology change was induced on these dental substrates after exposure to plasmas. Significance Without affecting the bulk properties, a super-hydrophilic surface could be easily achieved by the plasma brush treatment regardless of original hydrophilicity/hydrophobicity of dental substrates tested. PMID:23755823

A room temperature strategy towards enhanced performance and bias stability of oxide thin film transistor with a sandwich structure channel layer

NASA Astrophysics Data System (ADS)

Zeng, Yong; Ning, Honglong; Zheng, Zeke; Zhang, Hongke; Fang, Zhiqiang; Yao, Rihui; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao; Lu, Xubing

2017-04-01

Thermal annealing is a conventional and effective way to improve the bias stress stability of oxide thin film transistors (TFT) on solid substrates. However, it is still a challenge for enhancing the bias stress stability of oxide TFTs on flexible substrates by high-temperature post-treatment due to the thermal sensitivity of flexible substrates. Here, a room temperature strategy is presented towards enhanced performance and bias stability of oxide TFTs by intentionally engineering a sandwich structure channel layer consisting of a superlattice with aluminum doped zinc oxide (AZO) and Al2O3 thin films. The Al2O3/AZO/Al2O3-TFTs not only exhibit a saturation mobility of 9.27 cm2 V-1 s-1 and a linear mobility of 11.38 cm2 V-1 s-1 but also demonstrate a better bias stress stability than AZO/Al2O3-TFT. Moreover, the underlying mechanism of this enhanced electrical performance of TFTs with a sandwich structure channel layer is that the bottom Al2O3 thin films can obviously improve the crystalline phase of AZO films while decreasing electrical trapping centers and adsorption sites for undesirable molecules such as water and oxygen.

Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozlovskiy, V. I.; Krivobok, V. S., E-mail: krivobok@lebedev.ru; Kuznetsov, P. I.

2016-05-15

Strained epitaxial ZnSe layers are grown on GaAs substrates by the method of vapor-phase epitaxy from metal-organic compounds. It is found that Se nanoislands with a density of 10{sup 8} to 10{sup 9} cm{sup –2} are formed at the surface of such layers. It is established that an increase in the size of Se islands and a decrease in their density take place after completion of growth. Annealing in a H{sub 2} atmosphere at a temperature higher than 260°C leads to the disappearance of Se islands and to a decrease in the surface roughness. It is shown that annealing doesmore » not lead to deterioration of the structural perfection of the epitaxial ZnSe films; rather, annealing gives rise to a decrease in the intensity of impurity–defect luminescence and to an increase in the intensity of intrinsic radiation near the bottom of the exciton band.« less

Anti-Arrhenius cleavage of covalent bonds in bottlebrush macromolecules on substrate.

PubMed

Lebedeva, Natalia V; Nese, Alper; Sun, Frank C; Matyjaszewski, Krzysztof; Sheiko, Sergei S

2012-06-12

Spontaneous degradation of bottlebrush macromolecules on aqueous substrates was monitored by atomic force microscopy. Scission of C ─ C covalent bonds in the brush backbone occurred due to steric repulsion between the adsorbed side chains, which generated bond tension on the order of several nano-Newtons. Unlike conventional chemical reactions, the rate of bond scission was shown to decrease with temperature. This apparent anti-Arrhenius behavior was caused by a decrease in the surface energy of the underlying substrate upon heating, which results in a corresponding decrease of bond tension in the adsorbed macromolecules. Even though the tension dropped minimally from 2.16 to 1.89 nN, this was sufficient to overpower the increase in the thermal energy (k(B)T) in the Arrhenius equation. The rate constant of the bond-scission reaction was measured as a function of temperature and surface energy. Fitting the experimental data by a perturbed Morse potential V = V(0)(1 - e(-βx))(2) - fx, we determined the depth and width of the potential to be V(0) = 141 ± 19 kJ/mol and β(-1) = 0.18 ± 0.03 Å, respectively. Whereas the V(0) value is in reasonable agreement with the activation energy E(a) = 80-220 kJ/mol of mechanical and thermal degradation of organic polymers, it is significantly lower than the dissociation energy of a C ─ C bond D(e) = 350 kJ/mol. Moreover, the force constant K(x) = 2β(2)V(0) = 1.45 ± 0.36 kN/m of a strained bottlebrush along its backbone is markedly larger than the force constant of a C ─ C bond K(l) = 0.44 kN/m, which is attributed to additional stiffness due to deformation of the side chains.

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding whitemore » emission.« less

Tuning temperature and size of hot spots and hot-spot arrays.

PubMed

Saïdi, Elika; Babinet, Nicolas; Lalouat, Loïc; Lesueur, Jérôme; Aigouy, Lionel; Volz, Sébastian; Labéguerie-Egéa, Jessica; Mortier, Michel

2011-01-17

By using scanning thermal microscopy, it is shown that nanoscale constrictions in metallic microwires deposited on an oxidized silicon substrate can be tuned in terms of temperature and confinement size. High-resolution temperature maps indeed show that submicrometer hot spots and hot-spot arrays are obtained when the SiO(2) layer thickness decreases below 100 nm. When the SiO(2) thickness becomes larger, heat is less confined in the vicinity of the constrictions and laterally spreads all along the microwire. These results are in good agreement with numerical simulations, which provide dependences between silica-layer thickness and nanodot shape and temperature. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

NASA Astrophysics Data System (ADS)

Bakan, Gokhan; Adnane, Lhacene; Gokirmak, Ali; Silva, Helena

2012-09-01

Temperature-dependent electrical resistivity, ρ(T), and thermal conductivity, k(T), of nanocrystalline silicon microwires self-heated to melt are extracted by matching simulated current-voltage (I-V) characteristics to experimental I-V characteristics. Electrical resistivity is extracted from highly doped p-type wires on silicon dioxide in which the heat losses are predominantly to the substrate and the self-heating depends mainly on ρ(T) of the wires. The extracted ρ(T) decreases from 11.8 mΩ cm at room-temperature to 5.2 mΩ cm at 1690 K, in reasonable agreement with the values measured up to ˜650 K. Electrical resistivity and thermal conductivity are extracted from suspended highly doped n-type silicon wires in which the heat losses are predominantly through the wires. In this case, measured ρ(T) (decreasing from 20.5 mΩ cm at room temperature to 12 mΩ cm at 620 K) is used to extract ρ(T) at higher temperatures (decreasing to 1 mΩ cm at 1690 K) and k(T) (decreasing from 30 W m-1 K-1 at room temperature to 20 W m-1 K-1 at 1690 K). The method is tested by using the extracted parameters to model wires with different dimensions. The experimental and simulated I-V curves for these wires show good agreement up to high voltage and temperature levels. This technique allows extraction of the electrical resistivity and thermal conductivity up to very high temperatures from self-heated microstructures.

Effect of Pd Surface Roughness on the Bonding Process and High Temperature Reliability of Au Ball Bonds

NASA Astrophysics Data System (ADS)

Huang, Y.; Kim, H. J.; McCracken, M.; Viswanathan, G.; Pon, F.; Mayer, M.; Zhou, Y. N.

2011-06-01

A 0.3- μm-thick electrolytic Pd layer was plated on 1 μm of electroless Ni on 1 mm-thick polished and roughened Cu substrates with roughness values ( R a) of 0.08 μm and 0.5 μm, respectively. The rough substrates were produced with sand-blasting. Au wire bonding on the Ni/Pd surface was optimized, and the electrical reliability was investigated under a high temperature storage test (HTST) during 800 h at 250°C by measuring the ball bond contact resistance, R c. The average value of R c of optimized ball bonds on the rough substrate was 1.96 mΩ which was about 40.0% higher than that on the smooth substrate. The initial bondability increased for the rougher surface, so that only half of the original ultrasonic level was required, but the reliability was not affected by surface roughness. For both substrate types, HTST caused bond healing, reducing the average R c by about 21% and 27%, respectively. Au diffusion into the Pd layer was observed in scanning transmission electron microscopy/ energy dispersive spectroscopy (STEM-EDS) line-scan analysis after HTST. It is considered that diffusion of Au or interdiffusion between Au and Pd can provide chemically strong bonding during HTST. This is supported by the R c decrease measured as the aging time increased. Cu migration was indicated in the STEM-EDS analysis, but its effect on reliability can be ignored. Au and Pd tend to form a complete solid solution at the interface and can provide reliable interconnection for high temperature (250°C) applications.

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

NASA Astrophysics Data System (ADS)

Troughton, J. G.; Downs, P.; Price, R.; Atkinson, D.

2017-01-01

Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.

Investigation of the local structure variance of water molecules in laser-induced thermal desorption process

NASA Astrophysics Data System (ADS)

Ju, Shin-Pon; Weng, Cheng-I.

2004-05-01

This paper presents the use of molecular dynamics simulation in the study of laser-induced thermal desorption (LITD) of water molecules adjacent to a laser-heated Au substrate. The local structure of the water molecules is investigated by considering the densities of the oxygen and hydrogen atoms, the average number of neighbors, nNN, and the average number of H-bonds, nHB. At an equilibrium temperature of 300 K, the simulation results show that three adsorption water layers are formed in the immediate vicinity of the Au surface, and that each four-fold hollow site on the uppermost Au(0 0 1) surface is occupied by a single water molecule. Following laser-induced heating of the Au substrate with a sub-picosecond laser pulse of 350 fs, the substrate temperature increases to 1000 K. This causes a gradual heating of the adjacent water film, which is accompanied by a decrease in the values of nNN and nHB. Hence, it can be concluded that an increase in the water film temperature destroys the hydrogen-bonding network throughout the water film. Although the maximum local temperature of the water film occurs in the region immediately adjacent to the Au substrate, it is determined that the attractive energy between the Au atoms and the water molecules in this region causes the water molecules to aggregate together to form three-dimensional water clusters. Furthermore, this energy prevents the hydrogen bonds in this region from breaking apart as violently as those within the phase explosion region. Finally, it is observed that the phase explosion phenomenon occurs in the region of the water film where the values of nNN and nHB are at a minimum.

Enzymatic production of infant milk fat analogs containing palmitic acid: optimization of reactions by response surface methodology.

PubMed

Maduko, C O; Akoh, C C; Park, Y W

2007-05-01

Infant milk fat analogs resembling human milk fat were synthesized by an enzymatic interesterification between tripalmitin, coconut oil, safflower oil, and soybean oil in hexane. A commercially immobilized 1,3-specific lipase, Lipozyme RM IM, obtained from Rhizomucor miehei was used as a biocatalyst. The effects of substrate molar ratio, reaction time, and incubation temperature on the incorporation of palmitic acid at the sn-2 position of the triacylglycerols were investigated. A central composite design with 5 levels and 3 factors consisting of substrate ratio, reaction temperature, and incubation time was used to model and optimize the reaction conditions using response surface methodology. A quadratic model using multiple regressions was then obtained for the incorporation of palmitic acid at the sn-2 positions of glycerols as the response. The coefficient of determination (R2) value for the model was 0.845. The incorporation of palmitic acid appeared to increase with the decrease in substrate molar ratio and increase in reaction temperature, and optimum incubation time occurred at 18 h. The optimal conditions generated from the model for the targeted 40% palmitic acid incorporation at the sn-2 position were 3 mol/mol, 14.4 h, and 55 degrees C; and 2.8 mol/mol, 19.6 h, and 55 degrees C for substrate ratio (moles of total fatty acid/moles of tripalmitin), time, and temperature, respectively. Infant milk fat containing fatty acid composition and sn-2 fatty acid profile similar to human milk fat was successfully produced. The fat analogs produced under optimal conditions had total and sn-2 positional palmitic acid levels comparable to that of human milk fat.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

PubMed

Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

2015-12-19

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

PubMed

Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2010-03-01

Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

Effect of Spray Distance on Microstructure and Tribological Performance of Suspension Plasma-Sprayed Hydroxyapatite-Titania Composite Coatings

NASA Astrophysics Data System (ADS)

Zhang, Chao; Xu, Haifeng; Geng, Xin; Wang, Jingjing; Xiao, Jinkun; Zhu, Peizhi

2016-10-01

Hydroxyapatite (HA)-titania (TiO2) composite coatings prepared on Ti6Al4V alloy surface can combine the excellent mechanical property of the alloy substrate and the good biocompatibility of the coating material. In this paper, HA-TiO2 composite coatings were deposited on Ti6Al4V substrates using suspension plasma spray (SPS). X-ray diffraction, scanning electron microscopy, Fourier infrared absorption spectrometry and friction tests were used to analyze the microstructure and tribological properties of the obtained coatings. The results showed that the spray distance had an important influence on coating microstructure and tribological performance. The amount of decomposition phases decreased as the spray distance increased. The increase in spray distance from 80 to 110 mm improved the crystalline HA content and decreased the wear performance of the SPS coatings. In addition, the spray distance had a big effect on the coating morphology due to different substrate temperature resulting from different spray distance. Furthermore, a significant presence of OH- and CO3 2- was observed, which was favorable for the biomedical applications.

Mossbauer Study of Low Temperature Magnetic and magnetooptic Properties of Amorphous Tb/Fe Multilayers

NASA Astrophysics Data System (ADS)

Chowdhury, Ataur

Magnetic and magnetooptic properties of multilayers critically depend on detailed magnetic and structural ordering of the interface. To study these properties in Tb/Fe multilayers, samples with varying layer thicknesses were fabricated by planar magnetic sputtering on polyester substrates. Mossbauer effect spectra were recorded at different temperatures ranging between 20 K and 300 K. The results show that perpendicular magnetic anisotropy (PMA) increases as temperature decreases for samples that show parallel anisotropy at room temperature, and for samples that show strong PMA at room temperature, no significant change in PMA is observed at low temperature (<100 K). Hyperfine field of samples that display parallel anisotropy at room temperature shows oscillatory behavior, reminiscent of RKKY oscillations, at low temperatures (<100 K). Plausible causes of these properties will be discussed in the paper.

Cladonia lichens on extensive green roofs: evapotranspiration, substrate temperature, and albedo.

PubMed

Heim, Amy; Lundholm, Jeremy

2013-01-01

Green roofs are constructed ecosystems that provide ecosystem services in urban environments. Shallow substrate green roofs subject the vegetation layer to desiccation and other environmental extremes, so researchers have evaluated a variety of stress-tolerant vegetation types for green roof applications. Lichens can be found in most terrestrial habitats.  They are able to survive extremely harsh conditions, including frequent cycles of desiccation and rehydration, nutrient-poor soil, fluctuating temperatures, and high UV intensities. Extensive green roofs (substrate depth <20cm) exhibit these harsh conditions, making lichens possible candidates for incorporation into the vegetation layer on extensive green roofs.  In a modular green roof system, we tested the effect of Cladonia lichens on substrate temperature, water loss, and albedo compared to a substrate-only control. Overall, the Cladonia modules had significantly cooler substrate temperatures during the summer and significantly warmer temperatures during the fall.  Additionally, the Cladonia modules lost significantly less water than the substrate-only control. This implies that they may be able to benefit neighboring vascular plant species by reducing water loss and maintaining favorable substrate temperatures.

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

PubMed

Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

2014-05-28

The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

Post fire organic matter biodegradation in permafrost soils: Case study after experimental heating of mineral horizons.

PubMed

Masyagina, O V; Tokareva, I V; Prokushkin, A S

2016-12-15

Periodical ground fires of high frequency in permafrost forest ecosystems of Siberia (Russian Federation) are essential factors determining quantitative and qualitative parameters of permafrost soil organic matter. Specific changes in physical and chemical parameters and microbial activity of permafrost soil mineral horizons of northern taiga larch stands were revealed after heating at high temperatures (150-500°C) used for imitation of different burn intensities. Burning at 150-200°C resulted in decreasing of soil pH, whilst heating at 300-500°C caused increase of pH compare to unheated soils. Water-soluble organic carbon concentration in permafrost soils heated at 150-200°C was much higher than that of unheated soils. All these changes determined soil microbial activity in heated soils. In particular, in soils heated at 300-500°C there was momentary stimulating effect on substrate-induced respiration registered and on basal respiration values in soils burned at 150°C and 300-400°C. Four-month laboratory incubation of permafrost soils heated at different temperatures showed stimulation of microbial activity in first several days after inoculation due to high substrate availability after heating. Then soon after that soil microbial community started to be depleted on substrate because of decreasing water-soluble organic carbon, C and N content and it continued to the end of incubation. Copyright © 2016 Elsevier B.V. All rights reserved.

Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

NASA Technical Reports Server (NTRS)

Johnston, A. H.; Swimm, R. T.; Thorbourn, D. O.

2012-01-01

Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

NASA Astrophysics Data System (ADS)

Zhu, Q. X.; Wang, W.; Zhao, X. Q.; Li, X. M.; Wang, Y.; Luo, H. S.; Chan, H. L. W.; Zheng, R. K.

2012-05-01

Tensiled La0.5Sr0.5CoO3 (LSCO) thin films were epitaxially grown on piezoelectric 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. Due to the epitaxial nature of the interface, the lattice strain induced by ferroelectric poling or the converse piezoelectric effect in the PMN-PT substrate is effectively transferred to the LSCO film and thus reduces the tensile strain of the film, giving rise to a decrease in the resistivity of the LSCO film. We discuss these strain effects within the framework of the spin state transition of Co3+ ions and modification of the electronic bandwidth that is relevant to the induced strain. By simultaneously measuring the strain and the resistivity, quantitative relationship between the resistivity and the strain was established for the LSCO film. Both theoretical calculation and experimental results demonstrate that the ferroelectric field effect at room temperature in the LSCO/PMN-PT field-effect transistor is minor and could be neglected. Nevertheless, with decreasing temperature, the ferroelectric field effect competes with the strain effect and plays a more and more important role in influencing the electronic transport properties of the LSCO film, which we interpreted as due to the localization of charge carriers at low temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haidar, M., E-mail: mohammad.haidar@Physics.gu.se; Ranjbar, M.; Balinsky, M.

The magnetodynamical properties of nanometer-thick yttrium iron garnet films are studied using ferromagnetic resonance as a function of temperature. The films were grown on gadolinium gallium garnet substrates by pulsed laser deposition. First, we found that the damping coefficient increases as the temperature increases for different film thicknesses. Second, we found two different dependencies of the damping on film thickness: at room temperature, the damping coefficient increases as the film thickness decreases, while at T = 8 K, we find the damping to depend only weakly on the thickness. We attribute this behavior to an enhancement of the relaxation of the magnetization bymore » impurities or defects at the surfaces.« less

Reversible strain effect on the magnetization of LaCoO3 films

NASA Astrophysics Data System (ADS)

Herklotz, A.; Rata, A. D.; Schultz, L.; Dörr, K.

2009-03-01

The magnetization (M) of a LaCoO3 film grown epitaxially on a piezoelectric substrate has been investigated in dependence on the biaxial in-plane strain. M decreases with the reversible release of tensile strain, with a maximum change of at least 6% per 0.1% of biaxial strain near the Curie temperature (TC) . The biaxial strain response of TC is estimated to be below 5 K/% in the tensile strain state. This is in agreement with results from statically strained films on various substrates. As possible origins of the strain-induced magnetization are considered (i) the strain-dependent Curie temperature, (ii) a strain-dependent magnetically inhomogeneous (phase-separated) state, and (iii) a strain-dependent magnetic moment (spin state) of Co ions. The TC shift is found insufficient to explain the measured strain-induced magnetization change but contributions from mechanism (ii) or (iii) must be involved.

Carbon monoxide sensor and method of use

DOEpatents

Dutta, Prabir K.; Swartz, Scott L.; Holt, Christopher T.; Revur, Ramachandra Rao

2006-01-10

A sensor and method of use for detection of low levels of carbon monoxide in gas mixtures. The approach is based on the change in an electrical property (for example: resistance) that occurs when carbon monoxide is selectively absorbed by a film of copper chloride (or other metal halides). The electrical property change occurs rapidly with both increasing and decreasing CO contents, varies with the amount of CO from the gas stream, and is insensitive to the presence of hydrogen. To make a sensor using this approach, the metal halide film will deposited onto an alumina substrate with electrodes. The sensor may be maintained at the optimum temperature with a thick film platinum heater deposited onto the opposite face of the substrate. When the sensor is operating at an appropriate (and constant) temperature, the magnitude of the electrical property measured between the interdigital electrodes will provide a measure of the carbon monoxide content of the gas.

Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, L.; Wang, Z. H., E-mail: zhwang@imr.ac.cn; Zhang, Z. D.

2016-01-28

NiAs-type manganese telluride (MnTe) films with preferred crystallographic plane of (110) were prepared on Si/SiO{sub 2} substrates by pulsed laser deposition. X-ray diffraction (XRD) of the films was studied at different temperatures. The XRD peak of MnTe (110) films shifts to higher angle with decreasing temperature, showing the decrease of the lattice parameter. Resistivity of the films was studied in the temperature range of 2–350 K. The bump between 150 and 250 K was observed in the films, which may be related to the special s-d and p-d overlaps induced by the compressed lattice. The magnon drag effect near its Néel temperaturemore » T{sub N} and enlarged magnetic-elastic coupling below 100 K were observed and analyzed in details.« less

Effect of shortened sleep on energy expenditure, core body temperature, and appetite: a human randomised crossover trial.

PubMed

Hibi, Masanobu; Kubota, Chie; Mizuno, Tomohito; Aritake, Sayaka; Mitsui, Yuki; Katashima, Mitsuhiro; Uchida, Sunao

2017-01-10

The effects of sleep restriction on energy metabolism and appetite remain controversial. We examined the effects of shortened sleep duration on energy metabolism, core body temperature (CBT), and appetite profiles. Nine healthy men were evaluated in a randomised crossover study under two conditions: a 3.5-h sleep duration and a 7-h sleep duration for three consecutive nights followed by one 7-h recovery sleep night. The subjects' energy expenditure (EE), substrate utilisation, and CBT were continually measured for 48 h using a whole-room calorimeter. The subjects completed an appetite questionnaire every hour while in the calorimeter. Sleep restriction did not affect total EE or substrate utilisation. The 48-h mean CBT decreased significantly during the 3.5-h sleep condition compared with the 7-h sleep condition (7-h sleep, 36.75 ± 0.11 °C; 3.5-h sleep, 36.68 ± 0.14 °C; p = 0.016). After three consecutive nights of sleep restriction, fasting peptide YY levels and fullness were significantly decreased (p = 0.011), whereas hunger and prospective food consumption were significantly increased, compared to those under the 7-h sleep condition. Shortened sleep increased appetite by decreasing gastric hormone levels, but did not affect EE, suggesting that greater caloric intake during a shortened sleep cycle increases the risk of weight gain.

Rapid Annealing Of Amorphous Hydrogenated Carbon

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

1989-01-01

Report describes experiments to determine effects of rapid annealing on films of amorphous hydrogenated carbon. Study represents first efforts to provide information for applications of a-C:H films where rapid thermal processing required. Major finding, annealing causes abrupt increase in absorption and concomitant decrease in optical band gap. Most of change occurs during first 20 s, continues during longer annealing times. Extend of change increases with annealing temperature. Researchers hypothesize abrupt initial change caused by loss of hydrogen, while gradual subsequent change due to polymerization of remaining carbon into crystallites or sheets of graphite. Optical band gaps of unannealed specimens on silicon substrates lower than those of specimens on quartz substrates.

Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

NASA Astrophysics Data System (ADS)

Scarel, G.; Ferrari, S.; Spiga, S.; Wiemer, C.; Tallarida, G.; Fanciulli, M.

2003-07-01

Zirconium dioxide films are grown in 200 atomic layer deposition cycles. Zirconium tetrachloride (ZrCl4) and water (H2O) are used as precursors. A relatively high dielectric constant (κ=22), wide band gap, and conduction band offset (5.8 and 1.4 eV, respectively) indicate that zirconium dioxide is a most promising substitute for silicon dioxide as a dielectric gate in complementary metal-oxide-semiconductor devices. However, crystallization and chlorine ions in the films might affect their electrical properties. These ions are produced during atomic layer deposition in which the ZrCl4 precursor reacts with the growth surface. It is desirable to tune the composition, morphology, and structural properties in order to improve their benefit on the electrical ones. To address this issue it is necessary to properly choose the growth parameters. This work focuses on the effects of the growth temperature Tg. ZrO2 films are grown at different substrate temperatures: 160, 200, 250, and 350 °C. Relevant modification of the film structure with a change in substrate temperature during growth is expected because the density of reactive sites [mainly Si+1-(OH)-1 bonds] decreases with an increase in temperature [Y. B. Kim et al., Electrochem. Solid-State Lett. 3, 346 (2000)]. The amorphous film component, for example, that develops at Si+1-(OH)-1 sites on the starting growth surface, is expected to decrease with an increase in growth temperature. The size and consequences of film property modifications with the growth temperature are investigated in this work using x-ray diffraction and reflectivity, and atomic force microscopy. Time of flight-secondary ion mass spectrometry is used to study contaminant species in the films. From capacitance-voltage (CV) and current-voltage (IV) measurements, respectively, the dielectric constant κZrO2 and the leakage current are studied as a function of the film growth temperature.

Effect of Elevated Atmospheric CO2 and Temperature on the Disease Severity of Rocket Plants Caused by Fusarium Wilt under Phytotron Conditions

PubMed Central

Chitarra, Walter; Siciliano, Ilenia; Ferrocino, Ilario; Gullino, Maria Lodovica; Garibaldi, Angelo

2015-01-01

The severity of F. oxysporum f.sp. conglutinans on rocket plants grown under simulated climate change conditions has been studied. The rocket plants were cultivated on an infested substrate (4 log CFU g-1) and a non-infested substrate over three cycles. Pots were placed in six phytotrons in order to simulate different environmental conditions: 1) 400–450 ppm CO2, 18–22°C; 2) 800–850 ppm CO2, 18–22°C; 3) 400–450 ppm CO2, 22–26°C, 4) 800–850 ppm CO2, 22–26°C, 5) 400–450 ppm CO2, 26–30°C; 6) 800–850 ppm CO2, 26–30°C. Substrates from the infested and control samples were collected from each phytotron at 0, 60 and 120 days after transplanting. The disease index, microbial abundance, leaf physiological performances, root exudates and variability in the fungal profiles were monitored. The disease index was found to be significantly influenced by higher levels of temperature and CO2. Plate counts showed that fungal and bacterial development was not affected by the different CO2 and temperature levels, but a significant decreasing trend was observed from 0 up to 120 days. Conversely, the F. oxysporum f.sp. conglutinans plate counts did not show any significantly decrease from 0 up to 120 days. The fungal profiles, evaluated by means of polymerase chain reaction denaturing gradient gel electrophoresis (PCR-DGGE), showed a relationship to temperature and CO2 on fungal diversity profiles. Different exudation patterns were observed when the controls and infested plants were compared, and it was found that both CO2 and temperature can influence the release of compounds from the roots of rocket plants. In short, the results show that global climate changes could influence disease incidence, probably through plant-mediated effects, caused by soilborne pathogens. PMID:26469870

Effect of structural evolution on mechanical properties of ZrO2 coated Ti-6Al-7Nb-biomedical application

NASA Astrophysics Data System (ADS)

Zalnezhad, E.

2016-05-01

Zirconia (ZrO2) nanotube arrays were fabricated by anodizing pure zirconium (Zr) coated Ti-6Al-7Nb in fluoride/glycerol electrolyte at a constant potential of 60 V for different times. Zr was deposited atop Ti-6Al-7Nb via a physical vapor deposition magnetron sputtering (PVDMS) technique. Structural investigations of coating were performed utilizing X-ray diffraction (XRD) analysis. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to characterize the morphology and microstructure of coatings. Unannealed ZrO2 nanotube arrays were amorphous. Monoclinic and tetragonal ZrO2 appeared when the coated substrates were heat treated at 450 °C and 650 °C, while monoclinic ZrO2 was found at 850 °C and 900 °C. Mechanical properties, including nanohardness and modulus of elasticity, were evaluated at different annealing temperatures using a nanoindentation test. The nanoindentation results show that the nanohardness and modulus of elasticity for Ti-6AL-7Nb increased by annealing ZrO2 coated substrate at 450 °C. The nanohardness and modulus of elasticity for coated substrate decreased with annealing temperatures of 650, 850, and 900 °C. At an annealing temperature of 900 °C, cracks in the ZrO2 thin film coating occurred. The highest nanohardness and elastic modulus values of 6.34 and 218 GPa were achieved at an annealing temperature of 450 °C.

High Cell Density Process for Constitutive Production of a Recombinant Phytase in Thermotolerant Methylotrophic Yeast Ogataea thermomethanolica Using Table Sugar as Carbon Source.

PubMed

Charoenrat, Theppanya; Antimanon, Sompot; Kocharin, Kanokarn; Tanapongpipat, Sutipa; Roongsawang, Niran

2016-12-01

The yeast Ogataea thermomethanolica has recently emerged as a potential host for heterologous protein expression at elevated temperature. To evaluate the feasibility of O. thermomethanolica as heterologous host in large-scale fermentation, constitutive production of fungal phytase was investigated in fed-batch fermentation. The effect of different temperatures, substrate feeding strategies, and carbon sources on phytase production was investigated. It was found that O. thermomethanolica can grow in the temperature up to 40 °C and optimal at 34 °C. However, the maximum phytase production was observed at 30 °C and slightly decreased at 34 °C. The DOT stat control was the most efficient feeding strategy to obtain high cell density and avoid by-product formation. The table sugar can be used as an alternative substrate for phytase production in O. thermomethanolica. The highest phytase activity (134 U/mL) was obtained from table sugar at 34 °C which was 20-fold higher than batch culture (5.7 U/mL). At a higher cultivation temperature of 38 °C, table sugar can be used as a low-cost substrate for the production of phytase which was expressed with an acceptable yield (85 U/mL). Lastly, the results from this study reveal the industrial favorable benefits of employing O. thermomethanolica as a host for heterologous protein production.

Effect of oxygen deposition pressure and temperature on the structure and properties of pulsed laser-deposited La0.67Ca0.33MnOδ films

NASA Astrophysics Data System (ADS)

Horwitz, James S.; Dorsey, Paul C.; Koon, N. C.; Rubinstein, M.; Byers, J. M.; Gillespie, D. J.; Osofsky, Michael S.; Harris, V. G.; Grabowski, K. S.; Knies, D. L.; Donovan, Edward P.; Treece, Randolph E.; Chrisey, Douglas B.

1996-04-01

The effect of substrate temperature and oxygen deposition pressure on the structure and properties of thin films of LaxCa1-xMnO(delta ) has been investigated. Thin films (approximately 1000 angstroms) of La0.67Ca0.33MnO(delta ) were deposited onto LaAlO3 (100) substrates by pulsed laser deposition at a substrate temperature of 600 and 700 degree(s)C. A series of films were grown on different oxygen pressures, between 15 and 400 mTorr, which systematically changed the oxygen concentrations in the films. As-deposited films exhibited an oriented orthorhombic structure. At low oxygen deposition pressures films were preferentially (202) oriented. At high pressures deposited films had a (040) preferred orientation. A 900 degree(s)C anneal in flowing oxygen of a film deposited at low oxygen pressure resulted in a decrease in the a lattice parameter and a change in the preferred orientation from (202) to (040). Vacuum annealing at 550 degree(s)C resulted in an increase in the a lattice parameter. The resistivity as a function of temperature showed a significant variation as a function of growth conditions. The peak in the resistivity curve (Tm) varied between 73 and 150 K depending upon the growth conditions. The activation energy associated with the semiconducting phase was approximately the same for all films (approximately 100 meV).

The effect of temperature on post-feeding ammonia excretion and oxygen consumption in the southern catfish.

PubMed

Luo, Yiping; Xie, Xiaojun

2009-08-01

The post-prandial rates of ammonia excretion (TAN) and oxygen consumption MO2 in the southern catfish (Silurus meridionalis) were assessed at 2 h intervals post-feeding until the rates returned to those of the fasting rates, at 17.5, 22.5, 27.5, and 32.5 degrees C, respectively. Both fasting TAN and MO2 increased with temperature, and were lower than those previously reported for many fish species. The relationship between fasting TAN (mmol NH(3)-N kg(-1) h(-1)) and temperature (T, degrees C) was described as: fasting TAN = 0.144e (0.0266T) (r = 0.526, n = 27, P < 0.05). The magnitude of ammonia excretion and its ratio to total N intake EXNH3-N during the specific dynamic action (SDA) tended to increase initially, and then decrease with increasing temperature. The ammonia quotient (AQ), calculated as mol NH(3)-N/mol O(2), following feeding decreased as temperature increased. The relationship between AQ during SDA and temperature was described as: AQ(during SDA) = 0.303e (-0.0143T) (r = 0.739, n = 21, P < 0.05). Our results suggest that ammonia excretion and oxygen consumption post-feeding are operating independently of each other. Furthermore, it appears that the importance of protein as a metabolic substrate in postprandial fish decreases with temperature.

Magnetoresistance measurements of superconducting molybdenum nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baskaran, R., E-mail: baskaran@igcar.gov.in; Arasu, A. V. Thanikai; Amaladass, E. P.

2016-05-23

Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc{sub 2}(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.

Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD

NASA Astrophysics Data System (ADS)

Xu, Qingfang; Zhu, Peipei; Sun, Qingyun; Tu, Rong; Yang, Meijun; Zhang, Song; Zhang, Lianmeng; Goto, Takashi; Yan, Jiasheng; Li, Shusen

2017-12-01

Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (Tdep) and vanished at Tdep = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed.

Effect of Laser Power on Metallurgical, Mechanical and Tribological Characteristics of Hardfaced Surfaces of Nickel-Based Alloy

NASA Astrophysics Data System (ADS)

Gnanasekaran, S.; Padmanaban, G.; Balasubramanian, V.

2017-12-01

In this present work, nickel based alloy was deposited on 316 LN austenitic stainless steel (ASS) by a laser hardfacing technique to investigate the influence of laser power on macrostructure, microstructure, microhardness, dilution and wear characteristics. The laser power varied from 1.1 to 1.9 kW. The phase constitution, microstructure and microhardness were examined by optical microscope, scanning electron microscopy, energy dispersion spectroscopy and Vickers microhardness tester. The wear characteristics of the hardfaced surfaces and substrate were evaluated at room temperature (RT) under dry sliding wear condition (pin-on-disc). The outcome demonstrates that as the laser power increases, dilution increases and hardness of the deposit decreases. This is because excess heat melts more volume of substrate material and increases the dilution; subsequently it decreases the hardness of the deposit. The microstructure of the deposit is characterized by Ni-rich carbide, boride and silicide.

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

NASA Astrophysics Data System (ADS)

Roque, J.; Haas, B.; David, S.; Rochat, N.; Bernier, N.; Rouvière, J. L.; Salem, B.; Gergaud, P.; Moeyaert, J.; Martin, M.; Bertin, F.; Baron, T.

2018-05-01

In 0.3 Ga 0.7 As quantum wells (QW) embedded in AlGaAs barriers and grown on oxidized patterned (001) silicon substrates by metalorganic chemical vapor deposition using the aspect ratio trapping method are studied. An appropriate method combining cathodoluminescence and high resolution scanning transmission electron microscopy characterization is performed to spatially correlate the optical and structural properties of the QW. A triple period (TP) ordering along the ⟨111⟩ direction induced by the temperature decrease during the growth to favor indium incorporation and aligned along the oxidized patterns is observed in the QW. Local ordering affects the band gap and contributes to the decrease of the optical emission efficiency. Using thermal annealing, we were able to remove the TP ordering and improve the QW optical emission by two orders of magnitude.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidtbauer, Jan; Bansen, Roman; Heimburger, Robert

Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 Degree-Sign C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 Degree-Sign C.

Dynamic measurements of the spreading of liquid metals in controlled atmospheres with in situ surface preparation and analysis

NASA Astrophysics Data System (ADS)

Peebles, D. E.; Peebles, H. C.; Ohlhausen, J. A.; Hurst, M. J.

1996-02-01

A specially designed ultrahigh vacuum in situ surface analysis and wetting system has been constructed to study the spreading of liquid metal solders on carefully prepared and well-characterized solid substrates. The system consists of a standard ultrahigh vacuum surface analysis chamber linked to a reaction chamber for wetting or other experiments at pressures up to atmospheric. A sophisticated video system allows real-time monitoring of the spreading of the liquid metal through both side and top views. An infrared imaging system allows accurate remote temperature measurements. Sample surfaces are prepared and spreading experiments performed without intermediate exposure of the surfaces to the contaminating atmospheres. Solder spreading is performed under 50 Torr of highly purified helium gas to allow for adequate thermal coupling between the solder and the substrate. Initial studies have been completed for the spreading of pure tin solder on copper substrates in the absence of any fluxing agent. Three types of copper substrate surfaces were investigated in these experiments: the sputter-cleaned, air-exposed, and the as-received surface. Surface chemical analysis by x-ray photoelectron spectroscopy showed the air-exposed surface to consist of about 3 nm of Cu2O, while the as-received surface consisted of about 8 nm of Cu2O. The sputter-cleaned surface contained less than one monolayer (0.3 nm) of Cu2O. Spreading experiments utilizing a linear temperature ramp show that pure tin solder spreads readily on oxidized copper surfaces at elevated temperatures. The initiation temperature for rapid tin spreading on the as-received copper surface was 325 °C. Decreasing the thickness of the oxide on the surface lowered the observed temperature for the initiation of spreading and increased the rate of spreading. On the sputter-cleaned copper surface, rapid solder spreading was observed immediately upon melting of the solder.

Evolution of temperature and chemical parameters during composting of the pig slurry solid fraction amended with natural zeolite.

PubMed

Venglovsky, J; Sasakova, N; Vargova, M; Pacajova, Z; Placha, I; Petrovsky, M; Harichova, D

2005-01-01

A 3-month experiment was conducted at a 300 kg scale to observe decomposition processes in pig slurry solids amended with two different doses of natural Slovak zeolite-clinoptilolite (substrates S1 and S2, 1% and 2% of zeolite by weight, respectively) in comparison with the control (unamended solids). The experimental and control substrates were stored outdoors in sheltered static piles at ambient temperatures ranging from 8.0 to 34.7 degrees C. The solid fraction (SF) of pig slurry was obtained by separation on vibration sieves prior to slurry treatment with activated sludge. The initial water content of the SF was 77.1% and no water was added to the piles during the storage. The temperature in the core of the piles was recorded throughout the experiment. By day 3 and 5 of storage (1% and 2% zeolite, resp.), the temperature in the substrates S1 and S2 exceeded 55 degrees C and remained above this level for 15 days while the highest temperature recorded in the control during the experiment was 29.8 degrees C. Samples from the core of the piles were taken periodically to determine pH, dry matter at 105 degrees C (DM), ash (550 degrees C/4 h), ammonia nitrogen (N-NH(4)(+)), nitrate nitrogen (N-NO(3)(-)), total nitrogen (N(t)), total phosphorus (P(t)); total organic carbon (TOC) was computed. The results showed that pH levels in S1 and S2 remained below that in the control for most of the thermophilic stage. This may be related to water-soluble ammonia and the affinity of zeolites to ammonium ions. A significant decrease in the level of ammonia nitrogen in water extracts from S1 and S2 was observed between days 5 and 35 in comparison with the control. The values of ash also differed and corresponded to the intensity of the decomposition processes in the respective substrates.

Microstructure, Tensile Adhesion Strength and Thermal Shock Resistance of TBCs with Different Flame-Sprayed Bond Coat Materials Onto BMI Polyimide Matrix Composite

NASA Astrophysics Data System (ADS)

Abedi, H. R.; Salehi, M.; Shafyei, A.

2017-10-01

In this study, thermal barrier coatings (TBCs) composed of different bond coats (Zn, Al, Cu-8Al and Cu-6Sn) with mullite top coats were flame-sprayed and air-plasma-sprayed, respectively, onto bismaleimide matrix composites. These polyimide matrix composites are of interest to replace PMR-15, due to concerns about the toxicity of the MDA monomer from which PMR-15 is made. The results showed that pores and cracks appeared at the bond coat/substrate interface for the Al-bonded TBC because of its high thermal conductivity and diffusivity resulting in transferring of high heat flux and temperature to the polymeric substrate during top coat deposition. The other TBC systems due to the lower conductivity and diffusivity of bonding layers could decrease the adverse thermal effect on the polymer substrate during top coat deposition and exhibited adhesive bond coat/substrate interfaces. The tensile adhesion test showed that the adhesion strength of the coatings to the substrate is inversely proportional to the level of residual stress in the coatings. However, the adhesion strength of Al bond-coated sample decreased strongly after mullite top coat deposition due to thermal damage at the bond coat/substrate interface. TBC system with the Cu-6Sn bond coat exhibited the best thermal shock resistance, while Al-bonded TBC showed the lowest. It was inferred that thermal mismatch stresses and oxidation of the bond coats were the main factors causing failure in the thermal shock test.

Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Bhagwat, Vinay; Rymaszewski, Eugene J.; Lu, Toh-Ming; Cale, Timothy S.

2005-05-01

The effects of substrate heating on the stoichiometry and the electrical properties of pulsed dc reactively sputtered tantalum oxide films over a range of film thickness (0.14 to 5.4 μm) are discussed. The film stoichiometry, and hence the electrical properties, of tantalum oxide films; e.g., breakdown field, leakage current density, dielectric constant, and dielectric loss are compared for two different cases: (a) when no intentional substrate/film cooling is provided, and (b) when the substrate is water cooled during deposition. All other operating conditions are the same, and the film thickness is directly related to deposition time. The tantalum oxide films deposited on the water-cooled substrates are stoichiometric, and exhibit excellent electrical properties over the entire range of film thickness. ``Noncooled'' tantalum oxide films are stoichiometric up to ~1 μm film thickness, beyond that the deposited oxide is increasingly nonstoichiometric. The presence of partially oxidized Ta in thicker (>~1 μm) noncooled tantalum oxide films causes a lower breakdown field, higher leakage current density, higher apparent dielectric constant, and dielectric loss. The growth of nonstoichiometric tantalum oxide in thicker noncooled films is attributed to decreased surface oxygen concentration due to oxygen recombination and desorption at higher film temperatures (>~100 °C). The quantitative results presented reflect experience with a specific piece of equipment; however, the procedures presented can be used to characterize deposition processes in which film stoichiometry can change.

Oxides for sustainable photovoltaics with earth-abundant materials

NASA Astrophysics Data System (ADS)

Wagner, Alexander; Stahl, Mathieu; Ehrhardt, Nikolai; Fahl, Andreas; Ledig, Johannes; Waag, Andreas; Bakin, Andrey

2014-03-01

Energy conversion technologies are aiming to extremely high power capacities per year. Nontoxicity and abundance of the materials are the key requirements to a sustainable photovoltaic technology. Oxides are among the key materials to reach these goals. We investigate the influence of thin buffer layers on the performance of an ZnO:Al/buffer/Cu2O solar cells. Introduction of a thin ZnO or Al2O3 buffer layer, grown by thermal ALD, between ZnO:Al and Cu2O resulted in 45% increase of the solar cell efficiency. VPE growth of Cu2O employing elemental copper and pure oxygen as precursor materials is presented. The growth is performed on MgO substrates with the (001) orientation. On- and off- oriented substrates have been employed and the growth results are compared. XRD investigations show the growth of the (110) oriented Cu2O for all temperatures, whereas at a high substrate temperature additional (001) Cu2O growth occurs. An increase of the oxygen partial pressure leads to a more pronounced 2D growth mode, whereby pores between the islands still remain. The implementation of off-axis substrates with 3.5° and 5° does not lead to an improvement of the layer quality. The (110) orientation remains predominant, the grain size decreases and the FWHM of the (220) peak increases. From the AFM images it is concluded, that the (110) surface grows with a tilt angle to the substrate surface.

Molecular dynamics simulation of temperature effects on low energy near-surface cascades and surface damage in Cu

NASA Astrophysics Data System (ADS)

Zhu, Guo; Sun, Jiangping; Guo, Xiongxiong; Zou, Xixi; Zhang, Libin; Gan, Zhiyin

2017-06-01

The temperature effects on near-surface cascades and surface damage in Cu(0 0 1) surface under 500 eV argon ion bombardment were studied using molecular dynamics (MD) method. In present MD model, substrate system was fully relaxed for 1 ns and a read-restart scheme was introduced to save total computation time. The temperature dependence of damage production was calculated. The evolution of near-surface cascades and spatial distribution of adatoms at varying temperature were analyzed and compared. It was found that near-surface vacancies increased with temperature, which was mainly due to the fact that more atoms initially located in top two layers became adatoms with the decrease of surface binding energy. Moreover, with the increase of temperature, displacement cascades altered from channeling-like structure to branching structure, and the length of collision sequence decreased gradually, because a larger portion of energy of primary knock-on atom (PKA) was scattered out of focused chain. Furthermore, increasing temperature reduced the anisotropy of distribution of adatoms, which can be ascribed to that regular registry of surface lattice atoms was changed with the increase of thermal vibration amplitude of surface atoms.

Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt /Ti/SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Zhai, Jiwei; Yao, Xi; Xu, Zhengkui; Chen, Haydn

2006-08-01

Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x =0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt /Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x =0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

Magnetotransport parameters of La0.67Ca0.33MnO3 films grown on neodymium gallate substrates

NASA Astrophysics Data System (ADS)

Boikov, Yu. A.; Volkov, M. P.

2013-01-01

Weakly mechanically stressed 40-nm-thick La0.67Ca0.33MnO3 films have been grown coherently on a (001)NdGaO3 substrate by laser evaporation. The electrical resistivity ρ of the La0.67Ca0.33MnO3 film reaches a maximum at a temperature T C ≈ 255 K. At temperatures below 0.6 T C, the temperature dependences of ρ are well approximated by the relation ρ = ρdef + C 1 T 2 + C 2 T 4.5, in which the first term on the right-hand side accounts for the contribution of structural defects to electrical resistivity, and the second and third terms stand for those of the electron-electron and electron-magnon interactions, respectively. The parameters ρdef ≈ 1 x 10-4 Ω cm and C 1 ≈ 7.7 × 10-9 Ω cm K-2 do not depend on temperature and magnetic field H. The coefficient C 2 decreases with increasing H to reach about 4.9 × 10-15 Ω cm K-4.5 at μ0 H = 14 T.

Influence of Substrate Temperature on the Transformation Front Velocities That Determine Thermal Stability of Vapor-Deposited Glasses

DOE PAGES

Dalal, Shakeel S.; Ediger, M. D.

2015-02-09

Stable organic glasses prepared by physical vapor deposition transform into the supercooled liquid via propagating fronts of molecular mobility, a mechanism different from that exhibited by glasses prepared by cooling the liquid. In this paper, we show that spectroscopic ellipsometry can directly observe this front-based mechanism in real time and explore how the velocity of the front depends upon the substrate temperature during deposition. For the model glass former indomethacin, we detect surface-initiated mobility fronts in glasses formed at substrate temperatures between 0.68T g and 0.94T g. At each of two annealing temperatures, the substrate temperature during deposition can changemore » the transformation front velocity by a factor of 6, and these changes are imperfectly correlated with the density of the glass. We also observe substrate-initiated fronts at some substrate temperatures. By connecting with theoretical work, we are able to infer the relative mobilities of stable glasses prepared at different substrate temperatures. Finally, an understanding of the transformation behavior of vapor-deposited glasses may be relevant for extending the lifetime of organic semiconducting devices.« less

Influence of Microstructure on the Electrical Properties of Heteroepitaxial TiN Films

NASA Astrophysics Data System (ADS)

Xiang, Wenfeng; Liu, Yuan; Zhang, Jiaqi

2018-05-01

Heteroepitaxial TiN films were deposited on Si substrates by pulse laser deposition at different substrate temperature. The microstructure and surface morphology of the films were investigated by X-ray diffraction (θ-2θ scan, ω-scan, and ϕ-scan) and atomic force microscopy. The electrical properties of the prepared TiN films were studied using a physical property measurement system. The experimental results showed that the crystallinity and surface morphology of the TiN films were improved gradually with increasing substrate temperature below 700 °C. Specially, single crystal TiN films were prepared when substrate temperature is above 700 °C; However, the quality of TiN films gradually worsened when the substrate temperature was increased further. The electrical properties of the films were directly correlated to their crystalline quality. At the optimal substrate temperature of 700 °C, the TiN films exhibited the lowest resistivity and highest mobility of 25.7 μΩ cm and 36.1 cm2/V s, respectively. In addition, the mechanism concerning the influence of substrate temperature on the microstructure of TiN films is discussed in detail.

Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

NASA Astrophysics Data System (ADS)

Marrs, Michael

A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.

Fabrication of a Flexible Micro Temperature Sensor for Micro Reformer Applications

PubMed Central

Lee, Chi-Yuan; Lin, Chien-Hen; Lo, Yi-Man

2011-01-01

Micro reformers still face obstacles in minimizing their size, decreasing the concentration of CO, conversion efficiency and the feasibility of integrated fabrication with fuel cells. By using a micro temperature sensor fabricated on a stainless steel-based micro reformer, this work attempts to measure the inner temperature and increase the conversion efficiency. Micro temperature sensors on a stainless steel substrate are fabricated using micro-electro-mechanical systems (MEMS) and then placed separately inside the micro reformer. Micro temperature sensors are characterized by their higher accuracy and sensitivity than those of a conventional thermocouple. To the best of our knowledge, micro temperature sensors have not been embedded before in micro reformers and commercial products, therefore, this work presents a novel approach to integrating micro temperature sensors in a stainless steel-based micro reformer in order to evaluate inner local temperature distributions and enhance reformer performance. PMID:22163817

Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

NASA Astrophysics Data System (ADS)

Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

2015-02-01

InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

Comparison of operating strategies for increased biogas production from thin stillage.

PubMed

Moestedt, Jan; Nordell, Erik; Schnürer, Anna

2014-04-10

The effect of increasing organic loading rate (OLR) and simultaneously decreasing hydraulic retention time (HRT) during anaerobic digestion of sulphur- and nitrogen-rich thin stillage was investigated during operation of continuously stirred tank laboratory reactors at two different temperatures. The operating strategies and substrate were set in order to mimic an existing full-scale commercial biogas plant in Sweden. The reactors were operated for 554-570 days with a substrate mixture of thin stillage and milled grain, resulting in high ammonium concentrations (>4.5gL(-1)). Initially, one reactor was operated at 38°C, as in the full-scale plant, while in the experimental reactor the temperature was raised to 44°C. Both reactors were then subjected to increasing OLR (from 3.2 to 6.0gVSL(-1)d(-1)) and simultaneously decreasing HRT (from 45 to 24 days) to evaluate the effects of these operational strategies on process stability, hydrogen sulphide levels and microbial composition. The results showed that operation at 44°C was the most successful strategy, resulting in up to 22% higher methane yield compared with the mesophilic reactor, despite higher free ammonia concentration. Furthermore, kinetic studies revealed higher biogas production rate at 44°C compared with 38°C, while the level of hydrogen sulphide was not affected. Quantitative PCR analysis of the microbiological population showed that methanogenic archaea and syntrophic acetate-oxidising bacteria had responded to the new process temperature while sulphate-reducing bacteria were only marginally affected by the temperature-change. Copyright © 2014 Elsevier B.V. All rights reserved.

Rubber friction: role of the flash temperature.

PubMed

Persson, B N J

2006-08-16

When a rubber block is sliding on a hard rough substrate, the substrate asperities will exert time-dependent deformations of the rubber surface resulting in viscoelastic energy dissipation in the rubber, which gives a contribution to the sliding friction. Most surfaces of solids have roughness on many different length scales, and when calculating the friction force it is necessary to include the viscoelastic deformations on all length scales. The energy dissipation will result in local heating of the rubber. Since the viscoelastic properties of rubber-like materials are extremely strongly temperature dependent, it is necessary to include the local temperature increase in the analysis. At very low sliding velocity the temperature increase is negligible because of heat diffusion, but already for velocities of order 10(-2) m s(-1) the local heating may be very important. Here I study the influence of the local heating on the rubber friction, and I show that in a typical case the temperature increase results in a decrease in rubber friction with increasing sliding velocity for v>0.01 m s(-1). This may result in stick-slip instabilities, and is of crucial importance in many practical applications, e.g. for tyre-road friction and in particular for ABS braking systems.

Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

PubMed

Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

2014-01-01

Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature

PubMed Central

2014-01-01

Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications. PMID:25520589

The effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

NASA Astrophysics Data System (ADS)

Wang, Cai-Feng; Li, Qing-Shan; Hu, Bo; Li, Wei-Bing

2009-06-01

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I-V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

High glucose recovery from direct enzymatic hydrolysis of bisulfite-pretreatment on non-detoxified furfural residues.

PubMed

Xing, Yang; Bu, Lingxi; Sun, Dafeng; Liu, Zhiping; Liu, Shijie; Jiang, Jianxin

2015-10-01

This study reports four schemes to pretreat wet furfural residues (FRs) with sodium bisulfite for production of fermentable sugar. The results showed that non-detoxified FRs (pH 2-3) had great potential to lower the cost of bioconversion. The optimal process was that unwashed FRs were first pretreated with bisulfite, and the whole slurry was then directly used for enzymatic hydrolysis. A maximum glucose yield of 99.4% was achieved from substrates pretreated with 0.1 g NaHSO3/g dry substrate (DS), at a relatively low temperature of 100 °C for 3 h. Compared with raw material, enzymatic hydrolysis at a high-solid of 16.5% (w/w) specifically showed more excellent performance with bisulfite treated FRs. Direct bisulfite pretreatment improved the accessibility of substrates and the total glucose recovery. Lignosulfonate in the non-detoxified slurry decreased the non-productive adsorption of cellulase on the substrate, thus improving enzymatic hydrolysis. Copyright © 2015 Elsevier Ltd. All rights reserved.

Understanding of the development of in-plane residual stress in sol-gel-derived metal oxide thin films

NASA Astrophysics Data System (ADS)

Ohno, Kentaro; Uchiyama, Hiroaki; Kozuka, Hiromitsu

2012-01-01

The in-plane residual stress in thin films greatly affects their properties and functionality as well as the substrate bending, and hence is an important factor to be controlled. In order to obtain general knowledge on the development of residual stress in sol-gel-derived oxide thin films, the in-plane residual stress was measured for yttria stabilized zirconia gel films on Si(100) wafers as a function of firing temperature by measuring the substrate curvature. The films showed a rather complex variation in residual stress, and the mechanism of the residual stress evolution was discussed, referencing the intrinsic stress and the x-ray diffraction data. At low annealing temperatures of 100-200 °C, the residual tensile stress decreased and became compressive partially due to the structural relaxation occurring during cooling. When the firing temperature was increased over 200 °C, the residual stress turned tensile, and increased with increasing annealing temperature, which was attributed to the increase in intrinsic stress due to film densification as well as to the reduced structural relaxation due to the progress of densification. The residual tensile stress slightly decreased at firing temperatures of 500-600 °C, which was attributed to the reduction in intrinsic stress due to thermally activated atomic diffusion as well as to emergence of thermal stress. At firing temperature over 600 °C, the residual tensile stress increased again, which was attributed to the increase in thermal stress generated during cooling due to the increased Young's modulus of the film. Although appearing to be complicated, the whole variation of residual stress with firing temperature could be understood in terms of film densification, structural relaxation, atomic diffusion, progress of crystallization and thermal strain. The illustration presented in the work may provide a clear insight on how the residual stress could be developed in a variety of functional sol-gel-derived, crystalline oxide thin films.

Substrate temperature effect on structural and optical properties of Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Jariwala, B. S.; Shah, D. V.; Kheraj, Vipul

2012-06-01

Structural and optical properties of Bi2Te3 thin films, thermally evaporated on well-cleaned glass substrates at different substrate temperatures, are reported here. X-ray diffraction was carried out for the structural characterization. XRD patterns of the films exhibit preferential orientation along the [0 1 5] direction for the films deposited at all the substrate temperatures together with other supported planes [2 0 5] & [1 1 0]. All other deposition conditions like thickness, deposition rate and pressure were maintained same throughout the experiment. X-ray diffraction lines confirm that the grown films are polycrystalline in nature with hexagonal crystal structure. The effect of substrate temperature on lattice constants, grain size, micro strain, number of crystallites and dislocation density have been investigated and reported in this paper. Also the substrate temperature effect on the optical property has been also investigated using the FTIR spectroscopy.

Structural, morphological and optical properties of LiCo0.5Ni0.45Ag0.05O2 thin films

NASA Astrophysics Data System (ADS)

Haider, Adawiya J.; AL-Rsool, Rusul Abed; AL-Tabbakh, Ahmed A.; Al-Gebori, Abdul Nasser M.; Mohamed, Aliaa

2018-05-01

Pulsed Laser Deposition (PLD) method has been successfully used for the synthesized of nano-crystalline cathode m aterial LiCo0.5Ni0.45Ag0.05O2 (LCNAO) thin film. LCNAO Ferromagnetic using pulsed Nd-YAG laser with wavelength (λ = 532 nm) and duration (10 ns) and energy fluence (1.4 J/cm2) with different substrate temperature (100, 200, 300) ˚C and O2 pressure at 10 mbar. The structural, morphological and optical properties of the films were determined by X-ray Diffraction (XRD), Scan Electron Microscopy (SEM), Atomic Force microscope (AFM) and UV-VIS spectroscopy respectively. It is observed that partial layer to spinel transformation takes place during post annealing and the average particle size of the LiCo0.5Ni0.45Ag0.05O2 is found to be (1-12) nm from SEM measurement. Finally the optical properties of the thin films have been studied at different Substrate temperature. It found the energy gap decreases from 4.2 to 3.8 eV when the substrate's temperature increasing from 100° C into 300 °C of the LCNAO films. These mean that the optical quality of LCNAO films is improved due to the increase in crystalline size and reduction of defect sites.

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Influence of substrate temperature on properties of MgF 2 coatings

NASA Astrophysics Data System (ADS)

Yu, Hua; Qi, Hongji; Cui, Yun; Shen, Yanming; Shao, JianDa; Fan, ZhengXiu

2007-05-01

Thermal boat evaporation was employed to prepare MgF 2 single-layer coatings upon both JGS1 and UBK7 substrates at different substrate temperatures. Microstructure, transmittance and residual stress of these coatings were measured by X-ray diffraction, spectrophotometer, and optical interferometer, respectively. Measurement of laser induced damage threshold (LIDT) of the samples was performed at 355 nm, 8 ns pulses. The results showed that high substrate temperature was beneficial to crystallization of the film. Above 244 °C, the refractive index increased gradually with the substrate temperature rising. Whereas, it was exceptional at 210 °C that the refractive index was higher than those deposited at 244 and 277 °C. The tensile residual stresses were exhibited in all MgF 2 films, but not well correlated with the substrate temperature. In addition, the stresses were comparatively smaller upon JGS1 substrates. A tendency could be seen that the LIDTs reached the highest values at about 244 °C, and the films upon JGS1 had higher LIDTs than those upon UBK7 substrates at the same temperature. Meanwhile, the damage morphologies showed that the laser damage of the coating resulted from an absorbing center at the film-substrate interface. The features of the damages were displayed by an absorbing center dominated model. Furthermore, the reason of the difference in LIDT values was discussed in detail.

Alterations in energy substrate metabolism in mice with different degrees of sepsis.

PubMed

Irahara, Takayuki; Sato, Norio; Otake, Kosuke; Matsumura, Shigenobu; Inoue, Kazuo; Ishihara, Kengo; Fushiki, Tohru; Yokota, Hiroyuki

2018-07-01

Nutritional management is crucial during the acute phase of severe illnesses. However, the appropriate nutritional requirements for patients with sepsis are poorly understood. We investigated alterations in carbohydrate, fat, and protein metabolism in mice with different degrees of sepsis. C57BL/6 mice were divided into three groups: control mice group, administered with saline, and low- and high-dose lipopolysaccharide (LPS) groups, intraperitoneally administered with 1 and 5 mg of LPS/kg, respectively. Rectal temperature, food intake, body weight, and spontaneous motor activity were measured. Indirect calorimetry was performed using a respiratory gas analysis for 120 h, after which carbohydrate oxidation and fatty acid oxidation were calculated. Urinary nitrogen excretion was measured to evaluate protein metabolism. The substrate utilization ratio was recalculated. Plasma and liver carbohydrate and lipid levels were evaluated at 24, 72, and 120 h after LPS administration. Biological reactions decreased significantly in the low- and high-LPS groups. Fatty acid oxidation and protein oxidation increased significantly 24 h after LPS administration, whereas carbohydrate oxidation decreased significantly. Energy substrate metabolism changed from glucose to predominantly lipid metabolism depending on the degree of sepsis, and protein metabolism was low. Plasma lipid levels decreased, whereas liver lipid levels increased at 24 h, suggesting that lipids were transported to the liver as the energy source. Our findings revealed that energy substrate metabolism changed depending on the degree of sepsis. Therefore, in nutritional management, such metabolic alterations must be considered, and further studies on the optimum nutritional intervention during severe sepsis are necessary. Copyright © 2018 Elsevier Inc. All rights reserved.

Growth temperature modulated phase evolution and functional characteristics of high quality Pb1-x Lax (Zr0.9Ti0.1)O3 thin films

NASA Astrophysics Data System (ADS)

Kumar, Anuj; Pawar, Shuvam; Singh, Kirandeep; Kaur, Davinder

2018-05-01

In this study, we have reported the influence of growth temperature on perovskite phase evolution in sputtered deposited high quality Pb1-x Lax (Zr0.9 Ti0.1)O3 (PLZT) thin films on Pt/Ti/SiO2/Si substrate. PLZT thin films were fabricated at substrate temperature ranging from 400 to 700 °C. We have investigated the structural, dielectric, ferroelectric and leakage current characteristics of these thin films. XRD patterns reveal that 600 °C is the optimized temperature to deposit highly (110) oriented perovskite phase PLZT thin film. The further increase in temperature (700 °) causes reappearance of additional peaks corresponding to lead deficient pyrochlore phase. All PLZT thin films show decrease in dielectric constant with frequency. However, PLZT thin film fabricated at 600 °C displays dielectric constant ˜532 at 1 MHz frequency which is relatively higher than other deposited thin films. The P-E loops of these PLZT thin films exhibit strong dependence on deposition temperature. The pure perovskite PZLT thin film shows saturation polarization of ˜51.2µC/cm2 and coercive field (2Ec) ˜67.85 kV/cm. These high quality PLZT thin films finds their applications in non-volatile memory and nano-electro-mechanical systems (NEMS).

Experimental and Numerical Study of the Influence of Substrate Surface Preparation on Adhesion Mechanisms of Aluminum Cold Spray Coatings on 300M Steel Substrates

NASA Astrophysics Data System (ADS)

Nastic, A.; Vijay, M.; Tieu, A.; Rahmati, S.; Jodoin, B.

2017-10-01

The effect of substrate surface topography on the creation of metallurgical bonds and mechanical anchoring points has been studied for the cold spray deposition of pure aluminum on 300M steel substrate material. The coatings adhesion strength showed a significant decrease from 31.0 ± 5.7 MPa on polished substrates to 6.9 ± 2.0 MPa for substrates with roughness of 2.2 ± 0.5 μm. Strengths in the vicinity of 45 MPa were reached for coatings deposited onto forced pulsed waterjet treated surfaces with roughnesses larger than 33.8 μm. Finite element analysis has confirmed the sole presence of mechanical anchoring in coating adhesion strength for all surface treatment except polished surfaces. Grit embedment has been shown to be non-detrimental to coating adhesion for the current deposited material combination. The particle deformation process during impacts has been studied through finite element analysis using the Preston-Tonks-Wallace (PTW) constitutive model. The obtained equivalent plastic strain (PEEQ), temperature, contact pressure and velocity vector were correlated to the particle ability to form metallurgical bonds. Favorable conditions for metallurgical bonding were found to be highest for particles deposited on polished substrates, as confirmed by fracture surface analysis.

Method for single crystal growth of photovoltaic perovskite material and devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jinsong; Dong, Qingfeng

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

NASA Astrophysics Data System (ADS)

Asl, Hassan Zare; Rozati, Seyed Mohammad

2018-03-01

In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10-3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400-800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson-Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V-1 s-1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

1998-02-03

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Influence of Continuous and Discontinuous Depositions on Properties of Ito Films Prepared by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Aiempanakit, K.; Rakkwamsuk, P.; Dumrongrattana, S.

Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω·cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

PubMed

Fang, F; Markwitz, A

2009-05-01

Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

Method for wetting a boron alloy to graphite

DOEpatents

Storms, E.K.

1987-08-21

A method is provided for wetting a graphite substrate and spreading a a boron alloy over the substrate. The wetted substrate may be in the form of a needle for an effective ion emission source. The method may also be used to wet a graphite substrate for subsequent joining with another graphite substrate or other metal, or to form a protective coating over a graphite substrate. A noneutectic alloy of boron is formed with a metal selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) with excess boron, i.e., and atomic percentage of boron effective to precipitate boron at a wetting temperature of less than the liquid-phase boundary temperature of the alloy. The alloy is applied to the substrate and the graphite substrate is then heated to the wetting temperature and maintained at the wetting temperature for a time effective for the alloy to wet and spread over the substrate. The excess boron is evenly dispersed in the alloy and is readily available to promote the wetting and spreading action of the alloy. 1 fig.

Field emission from ZnS nanorods synthesized by radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Ghosh, P. K.; Maiti, U. N.; Jana, S.; Chattopadhyay, K. K.

2006-11-01

The field emission property of zinc sulphides nanorods synthesized in the thin film form on Si substrates has been studied. It is seen that ZnS nanorod thin films showed good field emission properties with a low-macroscopic turn-on field (2.9-6.3 V/μm). ZnS nanorods were synthesized by using radio frequency magnetron sputtering of a polycrystalline prefabricated ZnS target at a relatively higher pressure (10 -1 mbar) and at a lower substrate temperature (233-273 K) without using any catalyst. Transmission electron microscopic image showed the formation of ZnS nanorods with high aspect ratio (>60). The field emission data were analysed using Fowler-Nordhiem theory and the nearly straight-line nature of the F-N plots confirmed cold field emission of electrons. It was also found that the turn-on field decreased with the decrease of nanorod's diameters. The optical properties of the ZnS nanorods were also studied. From the measurements of transmittance of the films deposited on glass substrates, the direct allowed bandgap values have been calculated and they were in the range 3.83-4.03 eV. The thickness of the films was ˜600 nm.

Optically pumped lasing in a rolled-up dot-in-a-well (DWELL) microtube via the support of Au pad

NASA Astrophysics Data System (ADS)

Chai, Zhaoer; Wang, Qi; Cao, Jiawei; Mao, Guoming; Liu, Hao; Ren, Xiaomin; Maleev, Nikolai A.; Vasil'ev, Alexey P.; Zhukov, Alexey E.; Ustinov, Victor M.

2018-02-01

We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots ( 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, aiming to separate the tube from GaAs substrate and thus to decrease the substrate loss, which finally enables lasing with ultralow threshold power ( 4 µW) from an microtube ring resonator.

Ion beam deposition of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-01-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria-stabilized zirconia substrates by ion beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 80.5 K without post-deposition anneals. Both the deposition rate and the c lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c dimensions and low Tc's. Higher power sputtering produced a continuous decrease in the c lattice parameter and an increase in critical temperatures.

Kinetic Modeling of Corn Fermentation with S. cerevisiae Using a Variable Temperature Strategy.

PubMed

Souza, Augusto C M; Mousaviraad, Mohammad; Mapoka, Kenneth O M; Rosentrater, Kurt A

2018-04-24

While fermentation is usually done at a fixed temperature, in this study, the effect of having a controlled variable temperature was analyzed. A nonlinear system was used to model batch ethanol fermentation, using corn as substrate and the yeast Saccharomyces cerevisiae , at five different fixed and controlled variable temperatures. The lower temperatures presented higher ethanol yields but took a longer time to reach equilibrium. Higher temperatures had higher initial growth rates, but the decay of yeast cells was faster compared to the lower temperatures. However, in a controlled variable temperature model, the temperature decreased with time with the initial value of 40 ∘ C. When analyzing a time window of 60 h, the ethanol production increased 20% compared to the batch with the highest temperature; however, the yield was still 12% lower compared to the 20 ∘ C batch. When the 24 h’ simulation was analyzed, the controlled model had a higher ethanol concentration compared to both fixed temperature batches.

Effects of multi-frequency power ultrasound on the enzymolysis of corn gluten meal: Kinetics and thermodynamics study.

PubMed

Jin, Jian; Ma, Haile; Qu, Wenjuan; Wang, Kai; Zhou, Cunshan; He, Ronghai; Luo, Lin; Owusu, John

2015-11-01

The effects of multi-frequency power ultrasound (MPU) pretreatment on the kinetics and thermodynamics of corn gluten meal (CGM) were investigated in this research. The apparent constant (KM), apparent break-down rate constant (kA), reaction rate constants (k), energy of activation (Ea), enthalpy of activation (ΔH), entropy of activation (ΔS) and Gibbs free energy of activation (ΔG) were determined by means of the Michaelis-Menten equation, first-order kinetics model, Arrhenius equation and transition state theory, respectively. The results showed that MPU pretreatment can accelerate the enzymolysis of CGM under different enzymolysis conditions, viz. substrate concentration, enzyme concentration, pH, and temperature. Kinetics analysis revealed that MPU pretreatment decreased the KM value by 26.1% and increased the kA value by 7.3%, indicating ultrasound pretreatment increased the affinity between enzyme and substrate. In addition, the values of k for ultrasound pretreatment were increased by 84.8%, 41.9%, 28.9%, and 18.8% at the temperature of 293, 303, 313 and 323 K, respectively. For the thermodynamic parameters, ultrasound decreased Ea, ΔH and ΔS by 23.0%, 24.3% and 25.3%, respectively, but ultrasound had little change in ΔG value in the temperature range of 293-323 K. In conclusion, MPU pretreatment could remarkably enhance the enzymolysis of CGM, and this method can be applied to protein proteolysis industry to produce peptides. Copyright © 2015 Elsevier B.V. All rights reserved.

Optimization of vertical and lateral distances between target and substrate in deposition process of CuGaSe 2 thin films using one-step sputtering

DOE PAGES

Park, Jae -Cheol; Al-Jassim, Mowafak; Kim, Tae -Won

2017-02-01

Here, copper gallium selenide (CGS) thin films were fabricated using a combinatorial one-step sputtering process without an additional selenization process. The sample libraries as a function of vertical and lateral distance from the sputtering target were synthesized on a single soda-lime glass substrate at the substrate temperature of 500 °C employing a stoichiometric CGS single target. As we increased the vertical distance between the target and substrate, the CGS thin films had more stable and uniform characteristics in structural and chemical properties. Under the optimized conditions of the vertical distance (150 mm), the CGS thin films showed densely packed grainsmore » and large grain sizes up to 1 μm in scale with decreasing lateral distances. The composition ratio of Ga/[Cu+Ga] and Se/[Cu+Ga] showed 0.50 and 0.93, respectively, in nearly the same composition as the sputtering target. X-ray diffraction and Raman spectroscopy revealed that the CGS thin films had a pure chalcopyrite phase without any secondary phases such as Cu–Se or ordered vacancy compounds, respectively. In addition, we found that the optical bandgap energies of the CGS thin films are shifted from 1.650 to 1.664 eV with decreasing lateral distance, showing a near-stoichiometric region with chalcopyrite characteristics.« less

Low-Cost Wireless Temperature Measurement: Design, Manufacture, and Testing of a PCB-Based Wireless Passive Temperature Sensor.

PubMed

Yan, Dan; Yang, Yong; Hong, Yingping; Liang, Ting; Yao, Zong; Chen, Xiaoyong; Xiong, Jijun

2018-02-10

Low-cost wireless temperature measurement has significant value in the food industry, logistics, agriculture, portable medical equipment, intelligent wireless health monitoring, and many areas in everyday life. A wireless passive temperature sensor based on PCB (Printed Circuit Board) materials is reported in this paper. The advantages of the sensor include simple mechanical structure, convenient processing, low-cost, and easiness in integration. The temperature-sensitive structure of the sensor is a dielectric-loaded resonant cavity, consisting of the PCB substrate. The sensitive structure also integrates a patch antenna for the transmission of temperature signals. The temperature sensing mechanism of the sensor is the dielectric constant of the PCB substrate changes with temperature, which causes the resonant frequency variation of the resonator. Then the temperature can be measured by detecting the changes in the sensor's working frequency. The PCB-based wireless passive temperature sensor prototype is prepared through theoretical design, parameter analysis, software simulation, and experimental testing. The high- and low-temperature sensing performance of the sensor is tested, respectively. The resonant frequency decreases from 2.434 GHz to 2.379 GHz as the temperature increases from -40 °C to 125 °C. The fitting curve proves that the experimental data have good linearity. Three repetitive tests proved that the sensor possess well repeatability. The average sensitivity is 347.45 KHz / ℃ from repetitive measurements conducted three times. This study demonstrates the feasibility of the PCB-based wireless passive sensor, which provides a low-cost temperature sensing solution for everyday life, modern agriculture, thriving intelligent health devices, and so on, and also enriches PCB product lines and applications.

Low-Cost Wireless Temperature Measurement: Design, Manufacture, and Testing of a PCB-Based Wireless Passive Temperature Sensor

PubMed Central

Yan, Dan; Yang, Yong; Hong, Yingping; Liang, Ting; Yao, Zong; Chen, Xiaoyong; Xiong, Jijun

2018-01-01

Low-cost wireless temperature measurement has significant value in the food industry, logistics, agriculture, portable medical equipment, intelligent wireless health monitoring, and many areas in everyday life. A wireless passive temperature sensor based on PCB (Printed Circuit Board) materials is reported in this paper. The advantages of the sensor include simple mechanical structure, convenient processing, low-cost, and easiness in integration. The temperature-sensitive structure of the sensor is a dielectric-loaded resonant cavity, consisting of the PCB substrate. The sensitive structure also integrates a patch antenna for the transmission of temperature signals. The temperature sensing mechanism of the sensor is the dielectric constant of the PCB substrate changes with temperature, which causes the resonant frequency variation of the resonator. Then the temperature can be measured by detecting the changes in the sensor’s working frequency. The PCB-based wireless passive temperature sensor prototype is prepared through theoretical design, parameter analysis, software simulation, and experimental testing. The high- and low-temperature sensing performance of the sensor is tested, respectively. The resonant frequency decreases from 2.434 GHz to 2.379 GHz as the temperature increases from −40 °C to 125 °C. The fitting curve proves that the experimental data have good linearity. Three repetitive tests proved that the sensor possess well repeatability. The average sensitivity is 347.45 KHz/°C℃ from repetitive measurements conducted three times. This study demonstrates the feasibility of the PCB-based wireless passive sensor, which provides a low-cost temperature sensing solution for everyday life, modern agriculture, thriving intelligent health devices, and so on, and also enriches PCB product lines and applications. PMID:29439393

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

High performance ZnO:Al films deposited on PET substrates using facing target sputtering

NASA Astrophysics Data System (ADS)

Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

2013-10-01

ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10-3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

[Effects of grape seed addition in swine manure-wheat straw composting on the compost microbial community and carbon and nitrogen contents].

PubMed

Huang, Yi-Mei; Liu, Xue-Ling; Jiang, Ji-Shao; Huang, Hua; Liu, Dong

2012-08-01

Taking substrates swine manure and wheat straw (fresh mass ratio 10.5:1) as the control (PMW), a composting experiment was conducted in a self-made aerated static composting bin to study the effects of adding 8% grape seed (treatment PMW + G) on the succession of microbial community and the transformation of carbon and nitrogen in the substrates during the composting. Seven samples were collected from each treatment, according to the temperature of the compost during the 30 d composting period. The microbial population and physiological groups were determined, and the NH4(+)-N, NO3(-)-N, organic N, and organic C concentrations in the compost were measured. Grape seed addition induced a slight increase of bacterial count and a significant increase of actinomycetes count, but decreased the fungal count significantly. Grape seed addition also decreased the ratio of bacteria to actinomycetes and the counts of ammonifiers and denitrifiers, but increased the counts of nitrifiers, N-fixing bacteria, and cellulose-decomposing microorganisms. The contents of NH4(+)-N and organic C decreased, while that of NO3(-)-N increased obviously. The NO3(-)-N content in the compost was positively correlated with the actinomycetes count. During composting, the compost temperature in treatment PMW + G increased more rapidly, and remained steady in thermophilic phase, while the water content changed little, which provided a stable and higher population of actinomycetes and nitrifiers in thermophilic phase, being beneficial to the increase of compost nitrate N.

Effect of shortened sleep on energy expenditure, core body temperature, and appetite: a human randomised crossover trial

PubMed Central

Hibi, Masanobu; Kubota, Chie; Mizuno, Tomohito; Aritake, Sayaka; Mitsui, Yuki; Katashima, Mitsuhiro; Uchida, Sunao

2017-01-01

The effects of sleep restriction on energy metabolism and appetite remain controversial. We examined the effects of shortened sleep duration on energy metabolism, core body temperature (CBT), and appetite profiles. Nine healthy men were evaluated in a randomised crossover study under two conditions: a 3.5-h sleep duration and a 7-h sleep duration for three consecutive nights followed by one 7-h recovery sleep night. The subjects’ energy expenditure (EE), substrate utilisation, and CBT were continually measured for 48 h using a whole-room calorimeter. The subjects completed an appetite questionnaire every hour while in the calorimeter. Sleep restriction did not affect total EE or substrate utilisation. The 48-h mean CBT decreased significantly during the 3.5-h sleep condition compared with the 7-h sleep condition (7-h sleep, 36.75 ± 0.11 °C; 3.5-h sleep, 36.68 ± 0.14 °C; p = 0.016). After three consecutive nights of sleep restriction, fasting peptide YY levels and fullness were significantly decreased (p = 0.011), whereas hunger and prospective food consumption were significantly increased, compared to those under the 7-h sleep condition. Shortened sleep increased appetite by decreasing gastric hormone levels, but did not affect EE, suggesting that greater caloric intake during a shortened sleep cycle increases the risk of weight gain. PMID:28071649

Electrothermal DC characterization of GaN on Si MOS-HEMTs

NASA Astrophysics Data System (ADS)

Rodríguez, R.; González, B.; García, J.; Núñez, A.

2017-11-01

DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

Metallic glass as a temperature sensor during ion plating

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Spalvins, T.; Buckley, D. H.

1985-01-01

The temperature of the interface and/or a superficial layer of a substrate during ion plating was investigated using a metallic glass of the composition Fe67Co18B14Si1 as the substrate and as the temperature sensor. Transmission electron microscopy and diffraction studies determined the microstructure of the ion-plated gold film and the substrate. Results indicate that crystallization occurs not only in the film, but also in the substrate. The grain size of crystals formed during ion plating was 6 to 60 nm in the gold film and 8 to 100 nm in the substrate at a depth of 10 to 15 micrometers from the ion-plated interface. The temperature rise of the substrate during ion plating was approximately 500 C. Discontinuous changes in metallurgical microstructure, and physical, chemical, and mechanical properties during the amorphous to crystalline transition in metallic glasses make metallic glasses extremely useful materials for temperature sensor applications in coating processes.

Metallic glass as a temperature sensor during ion plating

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Spalvins, T.; Buckley, D. H.

1984-01-01

The temperature of the interface and/or a superficial layer of a substrate during ion plating was investigated using a metallic glass of the composition Fe67Co18B14Si1 as the substrate and as the temperature sensor. Transmission electron microscopy and diffraction studies determined the microstructure of the ion-plated gold film and the substrate. Results indicate that crystallization occurs not only in the film, but also in the substrate. The grain size of crystals formed during ion plating was 6 to 60 nm in the gold film and 8 to 100 nm in the substrate at a depth of 10 to 15 micrometers from the ion-plated interface. The temperature rise of the substrate during ion plating was approximately 500 C. Discontinuous changes in metallurgical microstructure, and physical, chemical, and mechanical properties during the amorphous to crystalline transition in metallic glasses make metallic glasses extremely useful materials for temperature sensor applications in coating processes.

Capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode

NASA Astrophysics Data System (ADS)

Gawri, Isha; Sharma, Mamta; Jindal, Silky; Singh, Harpreet; Tripathi, S. K.

2018-05-01

The present paper reports the capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode using chemical bath deposition method. Here anodic alumina layer prepared using electrolytic deposition method on Al substrate is used as insulating material. Using the capacitance-voltage variation at a fixed frequency, the different parameters such as Depletion layer width, Barrier height, Built-in voltage and Carrier concentration has been calculated at room temperature as well as at temperature range from 123 K to 323 K. With the increase in temperature the barrier height and depletion layer width follow a decreasing trend. Therefore, the capacitance-voltage characterization at different temperatures characterization provides strong evidence that the properties of MIS diode are primarily affected by diode parameters.

Investigation on the growth of CaCu 3Ti 4O 12 thin film and the origins of its dielectric relaxations

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang; Hark, S. K.; Xu, H. Y.; Mei, W. N.

2012-01-01

Using the radio frequency magnetron sputtering, CaCu 3Ti 4O 12 (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ˜10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.

The intermetallic formation and growth kinetics at the interface of near eutectic tin-silver-copper solder alloys and gold/nickel metallization

NASA Astrophysics Data System (ADS)

Gao, Mao

The formation of a one micron thick layer of an intermetallic compound between a solder alloy and a metallic substrate generally constitutes a good solder joint in an electronic device. However, if the compound grows too thick, and/or if multiple intermetallic compounds form, poor solder joint reliability may result. Thus significant interest has been focused on intermetallic compound phase selection and growth kinetics at such solder/metal interfaces. The present study focuses on one such specific problem, the formation and growth of intermetallic compounds at near eutectic Sn-Ag-Cu solder alloy/Ni interfaces. Sn-3.0Ag-0.5Cu solder was reflowed on Au/Ni substrates, resulting in the initial formation and growth of (CuNi)6Sn 5 at Sn-3.0Ag-0.5Cu /Ni interfaces. (NiCu)3Sn4 formed between the (CuNi)6Sn5 and the Ni substrate when the concentration of Cu in the liquid SnAgCu solder decreased to a critical value which depended upon temperature: 0.37, 0.31 and 0.3(wt.%) at reflow temperatures of 260°C, 245°C and 230°C respectively. The growth rate of (CuNi)6Sn5 was found to be consistent with extrapolations of a diffusion limited growth model formulated for lower temperature, solid state diffusion couples. The long range diffusion of Cu did not limit growth rates. The spalling of (CuNiAu)6Sn5 from (NiCu)3 Sn4 surfaces during reflow was also examined. When the Cu concentration in the solder decreased to approximately 0.28wt.%, the (Cu,Ni,Au) 6Sn5 was observed to spall. Compressive stress in (CuNiAu) 6Sn5 and weak adhesion between (CuNiAu)6Sn 5 and (NiCu)3Sn4 was found to cause this effect.

Influence of Substrate Heating and Nitrogen Flow on the Composition, Morphological and Mechanical Properties of SiNx Coatings Aimed for Joint Replacements

PubMed Central

Skjöldebrand, Charlotte; Schmidt, Susann; Vuong, Vicky; Pettersson, Maria; Grandfield, Kathryn; Högberg, Hans; Engqvist, Håkan; Persson, Cecilia

2017-01-01

Silicon nitride (SiNx) coatings are promising for joint replacement applications due to their high wear resistance and biocompatibility. For such coatings, a higher nitrogen content, obtained through an increased nitrogen gas supply, has been found to be beneficial in terms of a decreased dissolution rate of the coatings. The substrate temperature has also been found to affect the composition as well as the microstructure of similar coatings. The aim of this study was to investigate the effect of the substrate temperature and nitrogen flow on the coating composition, microstructure and mechanical properties. SiNx coatings were deposited onto CoCrMo discs using reactive high power impulse magnetron sputtering. During deposition, the substrate temperatures were set to 200 °C, 350 °C or 430 °C, with nitrogen-to-argon flow ratios of 0.06, 0.17 or 0.30. Scanning and transmission electron spectroscopy revealed that the coatings were homogenous and amorphous. The coatings displayed a nitrogen content of 23–48 at.% (X-ray photoelectron spectroscopy). The surface roughness was similar to uncoated CoCrMo (p = 0.25) (vertical scanning interferometry). The hardness and Young’s modulus, as determined from nanoindentation, scaled with the nitrogen content of the coatings, with the hardness ranging from 12 ± 1 GPa to 26 ± 2 GPa and the Young’s moduli ranging from 173 ± 8 GPa to 293 ± 18 GPa, when the nitrogen content increased from 23% to 48%. The low surface roughness and high nano-hardness are promising for applications exposed to wear, such as joint implants. PMID:28772532

Effect of electron-beam deposition process variables on the film characteristics of the CrOx films

NASA Astrophysics Data System (ADS)

Chiu, Po-kai; Liao, Yi-Ting; Tsai, Hung-Yin; Chiang, Donyau

2018-02-01

The film characteristics and optical properties of the chromium oxide films on the glass substrates prepared by electron-beam deposition with different process variables were investigated. The process variables included are the various oxygen flow rates, the different applied substrate temperatures, and the preparation process in Ar or O2 surrounding environment with and without ion-assisted deposition. The optical constants of the deposited films are determined from the reflectance and transmittance measurements obtained using a spectrophotometer with wavelengths ranging from 350 nm to 2000 nm. The microstructures of the films were examined by the XRD, SEM, and XPS. The electrical conductivity was measured by a four-point probe instrument. The resulting microstructures of all the prepared films are amorphous and the features of the films are dense, uniform and no pillar structure is observed. The refractive index of deposited films decrease with oxygen flow rate increase within studied wavelengths and the extinction coefficients have the same trend in wavelengths of UV/Vis ranges. Increasing substrate temperature to 200 oC results in increase of both refractive index and extinction coefficient, but substrate temperatures below 150 oC show negligible effect on optical constants. The optical and electrical properties in the prepared CrOx films are illustrated by the analyzed XPS results, which decompose the enveloped curve of chromium electron energy status into the constituents of metal Cr, oxides CrO2 and Cr2O3. The relative occupied area contributed from metal Cr and area contributed from the other oxides can express the concentration ratio of free electron to covalent bonds in deposited films and the ratio is applied to explain the film characteristics, including the optical constants and sheet resistance.

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

PubMed Central

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

Deposition of Cubic AlN Films on MgO (100) Substrates by Laser Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Mo, Z. K.; Yang, W. J.; Weng, Y.; Fu, Y. C.; He, H.; Shen, X. M.

2017-12-01

Cubic AlN (c-AlN) films were deposited on MgO (100) substrates by laser molecular beam epitaxy (LMBE) technique. The crystal structure and surface morphology of deposited films with various laser pulse energy and substrate temperature were investigated. The results indicate that c-AlN films exhibit the (200) preferred orientation, showing a good epitaxial relationship with the substrate. The surface roughness of c-AlN films increases when the laser pulse energy and substrate temperature increase. The film grown at laser pulse energy of 150 mJ and substrate temperature of 700 °C shows the best crystalline quality and relatively smooth surface.

Surface-enhanced infrared spectroscopic studies of the catalytic behavior of silver nanoparticles on a germanium substrate.

PubMed

Liou, Yen-Chen Maggie; Yang, Jyisy; Fasasi, Ayuba; Griffiths, Peter R

2011-05-01

The catalytic activity of silver nanoparticles (AgNPs) on a germanium substrate is reported. Para-nitrothiophenol (pNTP) that had been adsorbed on this substrate is converted to p-aminothiophenol (pATP) under very mild reaction conditions, such as simply soaking in water. The AgNPs may be formed either by physical vapor deposition or by electroless deposition from a solution of silver nitrate. Analogous reactions were not observed on copper nanoparticles on germanium or AgNPs on silicon or zinc selenide even though very slow conversion of pNTP to pATP was observed with Au nanoparticles (AuNPs) on Ge under controlled reaction conditions. The effects of factors that could influence the catalytic reaction were examined; these included the particle size of the AgNPs, reaction temperature, concentration and chemical nature of other ions present in the solution, the pH of the water, and the nature of the substrate. The reaction rate was approximately independent of the particle size for AgNPs between 50 and 150 nm in diameter. Increasing the temperature accelerates the reaction significantly; at temperatures above 40 °C, the adsorbed pNTP is completely converted by water within five minutes. Not surprisingly, the reaction rate was increased as the pH of the solution was decreased, as the reduction of each nitro group to an amino group requires six protons. The presence of Br(-) and I(-) ions accelerated the reaction to the point that even at 4 °C, the conversion of the nitro group was still observable, while solutions containing chloride ions had to be heated to 40 °C before their effect became apparent. Apparently, Br(-) and I(-) ions remove the oxide layer from the surface of the germanium substrate, facilitating transfer of electrons from the germanium to the nitro group of the pNTP.

The Effect of Deposition Conditions on Adhesion Strength of Ti and Ti6Al4V Cold Spray Splats

NASA Astrophysics Data System (ADS)

Goldbaum, Dina; Shockley, J. Michael; Chromik, Richard R.; Rezaeian, Ahmad; Yue, Stephen; Legoux, Jean-Gabriel; Irissou, Eric

2012-03-01

Cold spray is a complex process where many parameters have to be considered in order to achieve optimized material deposition and properties. In the cold spray process, deposition velocity influences the degree of material deformation and material adhesion. While most materials can be easily deposited at relatively low deposition velocity (<700 m/s), this is not the case for high yield strength materials like Ti and its alloys. In the present study, we evaluate the effects of deposition velocity, powder size, particle position in the gas jet, gas temperature, and substrate temperature on the adhesion strength of cold spayed Ti and Ti6Al4V splats. A micromechanical test technique was used to shear individual splats of Ti or Ti6Al4V and measure their adhesion strength. The splats were deposited onto Ti or Ti6Al4V substrates over a range of deposition conditions with either nitrogen or helium as the propelling gas. The splat adhesion testing coupled with microstructural characterization was used to define the strength, the type and the continuity of the bonded interface between splat and substrate material. The results demonstrated that optimization of spray conditions makes it possible to obtain splats with continuous bonding along the splat/substrate interface and measured adhesion strengths approaching the shear strength of bulk material. The parameters shown to improve the splat adhesion included the increase of the splat deposition velocity well above the critical deposition velocity of the tested material, increase in the temperature of both powder and the substrate material, decrease in the powder size, and optimization of the flow dynamics for the cold spray gun nozzle. Through comparisons to the literature, the adhesion strength of Ti splats measured with the splat adhesion technique correlated well with the cohesion strength of Ti coatings deposited under similar conditions and measured with tubular coating tensile (TCT) test.

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

PubMed

Wang, C; Ke, S Y; Yang, J; Hu, W D; Qiu, F; Wang, R F; Yang, Y

2015-03-13

The dependence of the electronic properties of a single Ge/Si quantum dot (QD) grown by the ion-beam sputtering deposition technique on growth temperature and QD diameter is investigated by conductive atomic force microscopy (CAFM). The Si-Ge intermixing effect is demonstrated to be important for the current distribution of single QDs. The current staircase induced by the Coulomb blockade effect is observed at higher growth temperatures (>700 °C) due to the formation of an additional barrier between dislocated QDs and Si substrate for the resonant tunneling of holes. According to the proposed single-hole-tunneling model, the fact that the intermixing effect is observed to increase as the incoherent QD size decreases may explain the increase in the starting voltage of the current staircase and the decrease in the current step width.

Initial substrate moisture content and storage temperature affects chemical properties of bagged substrates containing controlled release fertilizer at two different temperatures

USDA-ARS?s Scientific Manuscript database

Bagged potting mixes can be stored for weeks or months before being used by consumers. Some bagged potting mixes are amended with controlled release fertilizers (CRF). The objective of this research was to observe how initial substrate moisture content and storage temperature affect the chemical p...

Growth characteristics of nanocrystalline silicon films fabricated by using chlorinated precursors at low temperatures.

PubMed

Huang, Rui; Ding, Honglin; Song, Jie; Guo, Yanqing; Wang, Xiang; Lin, Xuanying

2010-11-01

We employed plasma enhanced chemical vapor deposition technique to fabricate nanocrystalline Si films at a low temperature of 250 degrees C by using SiCl4 and H2 as source gases. The evolution of microstructure of the films with deposition periods shows that nanocrystalline Si can be directly grown on amorphous substrate at the initial growth process, which is in contrast to the growth behavior observed in the SiH4/H2 system. Furthermore, it is interesting to find that the area density of nanocrystalline Si as well as grain size can be controlled by modulating the concentration of SiCl4. By decreasing the SiCl4 concentration, the area density of nanocrystalline Si can be enhanced up to 10(11) cm(-2), while the grain size is shown to decrease down to 10 nm. It is suggested that Cl plays an important role in the low-temperature growth of nanocrystalline Si.

Anti-Arrhenius cleavage of covalent bonds in bottlebrush macromolecules on substrate

PubMed Central

Lebedeva, Natalia V.; Nese, Alper; Sun, Frank C.; Matyjaszewski, Krzysztof; Sheiko, Sergei S.

2012-01-01

Spontaneous degradation of bottlebrush macromolecules on aqueous substrates was monitored by atomic force microscopy. Scission of C─C covalent bonds in the brush backbone occurred due to steric repulsion between the adsorbed side chains, which generated bond tension on the order of several nano-Newtons. Unlike conventional chemical reactions, the rate of bond scission was shown to decrease with temperature. This apparent anti-Arrhenius behavior was caused by a decrease in the surface energy of the underlying substrate upon heating, which results in a corresponding decrease of bond tension in the adsorbed macromolecules. Even though the tension dropped minimally from 2.16 to 1.89 nN, this was sufficient to overpower the increase in the thermal energy (kBT) in the Arrhenius equation. The rate constant of the bond-scission reaction was measured as a function of temperature and surface energy. Fitting the experimental data by a perturbed Morse potential V = V0(1 - e-βx)2 - fx, we determined the depth and width of the potential to be V0 = 141 ± 19 kJ/mol and β-1 = 0.18 ± 0.03 Å, respectively. Whereas the V0 value is in reasonable agreement with the activation energy Ea = 80–220 kJ/mol of mechanical and thermal degradation of organic polymers, it is significantly lower than the dissociation energy of a C─C bond De = 350 kJ/mol. Moreover, the force constant Kx = 2β2V0 = 1.45 ± 0.36 kN/m of a strained bottlebrush along its backbone is markedly larger than the force constant of a C─C bond Kl = 0.44 kN/m, which is attributed to additional stiffness due to deformation of the side chains. PMID:22645366

Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Šiljegović, M.; Bibić, N.

2012-05-01

This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 keV Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (1 0 0) substrates. The TiN films were deposited at the substrate temperature of 150 °C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 × 1015 and 2 × 1016 ions/cm2. The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 × 1016 ions/cm2. It is also observed that the mean crystallite size decreases with the increasing ion fluence.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Liwang, E-mail: liwang.liu@hotmail.com; Meng, Lei; Wang, Ling

The temperature dependence of the fluorescence spectrum of CdSe−ZnS core–shell quantum dots embedded in a polystyrene matrix is characterized between 30 °C and 60 °C. The spectrally integrated photoluminescence intensity is found to linearly decrease with −1.3%/ °C. This feature is exploited in a dual coating-substrate-configuration, consisting of a layer of this nanocomposite material, acting as a temperature sensor with optical readout, on top of an optically absorbing and opaque layer, acting as a photothermal excitation source, and covering a substrate material or structure of interest. From the frequency dependence of the optically detected photothermal signal in the frequency range between 5 Hz andmore » 150 Hz, different thermal parameters of the constituent layers are determined. The fitted values of thermal properties of the different layers, determined in different scenarios in terms of the used a priori information about the layers, are found to be internally consistent, and consistent with literature values.« less

Annealing temperature and thickness dependencies of structural and magnetic properties of Co2FeAl thin films

NASA Astrophysics Data System (ADS)

Belmeguenai, M.; Gabor, M. S.; Zighem, F.; Roussigné, Y.; Faurie, D.; Tiusan, C.

2016-09-01

Co2FeAl (CFA) thin films, of various thicknesses (3 nm≤t ≤50 nm ), have been grown by sputtering on (001) MgO single-crystal substrates and annealed at different temperatures (RT≤Ta≤600 ∘C , where RT is the room temperature). The influence of the CFA thickness (t ), as well as ex situ annealing temperature (Ta), on the magnetic and structural properties has been investigated by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed an epitaxial growth of the films with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B 2 phase to the A 2 phase when decreasing t or Ta. The deduced lattice parameters showed an in-plane tetragonal distortion and in-plane and out-plane strains that increase with Ta and 1 /t . For all Ta values, the variation of the effective magnetization, deduced from the fit of MS-FMR measurements, shows two different regimes separated by a critical thickness, which is Ta dependent. It decreases (increases) linearly with the inverse thickness (1 /t ) in the first (second) regime due to the contribution of the magnetoelastic anisotropy to surface (to volume) anisotropy. The observed behavior has been analyzed through a model allowing for the separation of the magnetocrystalline, magnetoelastic, and Néel-type interface anisotropy constants to the surface and the volume anisotropies. Similar behavior has been observed for the effective fourfold anisotropy field which governs the in-plane anisotropy present in all the samples. Finally, the MS-FMR data also allow one to conclude that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with Ta.

Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrasonis, G.; Gago, R.; Jimenez, I.

2005-10-01

Carbon (C) and carbon nitride (CN{sub x}) films were grown on Si(100) substrates by direct ion-beam sputtering (IBS) of a carbon target at different substrate temperatures (room temperature-450 deg. C) and Ar/N{sub 2} sputtering gas mixtures. Additionally, the effect of concurrent nitrogen-ion assistance during the growth of CN{sub x} films by IBS was also investigated. The samples were analyzed by elastic recoil detection analysis (ERDA) and x-ray absorption near-edge spectroscopy (XANES). The ERDA results showed that significant nitrogen amount (up to 20 at. %) was incorporated in the films, without any other nitrogen source but the N{sub 2}-containing sputtering gas.more » The nitrogen concentration is proportional to the N{sub 2} content in the sputtering beam and no saturation limit is reached under the present working conditions. The film areal density derived from ERDA revealed a decrease in the amount of deposited material at increasing growth temperature, with a correlation between the C and N losses. The XANES results indicate that N atoms are efficiently incorporated into the carbon network and can be found in different bonding environments, such as pyridinelike, nitrilelike, graphitelike, and embedded N{sub 2} molecules. The contribution of molecular and pyridinelike nitrogen decreases when the temperature increases while the contribution of the nitrilelike nitrogen increases. The concurrent nitrogen ion assistance resulted in the significant increase of the nitrogen content in the film but it induced a further reduction of the deposited material. Additionally, the assisting ions inhibited the formation of the nitrilelike configurations while promoting nitrogen environments in graphitelike positions. The nitrogen incorporation and release mechanisms are discussed in terms of film growth precursors, ion bombardment effects, and chemical sputtering.« less

Deposition of tantalum carbide coatings on graphite by laser interactions

NASA Technical Reports Server (NTRS)

Veligdan, James; Branch, D.; Vanier, P. E.; Barietta, R. E.

1994-01-01

Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing involved the use of a CO2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl5 gas near the substrate. The results of preliminary experiments using these techniques are described.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

[Number, activity and thermostability of the electrophoretic forms of acid phosphatase in Amoeba proteus, cultured at different temperatures].

PubMed

Sopina, V A

2001-01-01

In free-living amoebae (Amoeba proteus, strain B), cultured at 10 and 25 degrees C, we compared the number, activity, and thermostability of separate electromorphs of Triton-soluble acid phosphatase (AcP) revealed by disc-electrophoresis in polyacrylamide gel using 2-naphthyl phosphate (pH 4.0) as a substrate. No differences in the number of AcP electromorphs and their mobility were observed at both these temperatures. The total activity of AcP electromorphas per unit of cellular protein and their total thermostability were lower in amoebae acclimated to 10 degrees C than to 25 degrees C. The above decrease may be a consequence of a simultaneous decrease in the activity and thermostability of two tartrate-sensitive electromorphs, both being of lysosomal nature. The total activity and thermostability of tartrate-resistant AcP electromorphs did not differ in amoebae acclimated to the two above temperatures. In amoebae cultured at 10 degrees C the fall of activity and thermostability of lysosomal AcP correlates with the decrease in their primary cell thermoresistance and phagocytic activity. The obtained results confirm the earlier conclusion (Vysotskaya et al., 1994) that lysosomes may be involved in acclimation of electrothermal animals to changing environmental temperatures.

Microstructural studies by TEM of diamond films grown by combustion flame

NASA Astrophysics Data System (ADS)

Ma, G.-H. M.; Hirose, Y.; Amanuma, S.; McClure, M.; Prater, J. T.; Glass, J. T.

Microstructures of diamond films grown in an oxygen-acetylene combustion flame were studied by TEM. The O2/C2H2 gas ratio was fixed and the substrate materials and temperature were varied. High quality diamond films were grown by this method at high growth rates of about 30 micron/hr. A rough surface and high density of secondary nucleation sites and microtwins were observed in the diamond grains grown on molybdenum (Mo) at a substrate temperature of 500 C. When the substrate temperature wass raised to between 500 and 870 C, the defect density was greatly reduced, revealing a low density of stacking faults and dislocations. Diamond films grown on Si substrates did not show the same substrate temperature dependence on defect density, at least not over the same temperature range. However, the same correlation between defect density, secondary nucleation, and surface morphology was observed.

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM)

PubMed Central

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-01-01

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO2 thin film on a glass fiber cloth whose surface contained 96% V4+ and 4% V5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V5+, which causes destabilization of the monoclinic phase of VO2. When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role. PMID:27849051

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM)

NASA Astrophysics Data System (ADS)

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-11-01

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO2 thin film on a glass fiber cloth whose surface contained 96% V4+ and 4% V5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V5+, which causes destabilization of the monoclinic phase of VO2. When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role.

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM).

PubMed

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-11-16

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO 2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO 2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO 2 thin film on a glass fiber cloth whose surface contained 96% V 4+ and 4% V 5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V 5+ , which causes destabilization of the monoclinic phase of VO 2 . When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO 2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO 2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role.

Metabolomic Analysis Using Ultra-Performance Liquid Chromatography-Quadrupole-Time of Flight Mass Spectrometry (UPLC-Q-TOF MS) Uncovers the Effects of Light Intensity and Temperature under Shading Treatments on the Metabolites in Tea

PubMed Central

Ma, Lifeng; Yi, Xiaoyun; Ruan, Jianyun

2014-01-01

To investigate the effect of light intensity and temperature on the biosynthesis and accumulation of quality-related metabolites, field grown tea plants were shaded by Black Net and Nano-insulating Film (with additional 2–4°C cooling effect) with un-shaded plants as a control. Young shoots were subjected to UPLC-Q-TOF MS followed by multivariate statistical analysis. Most flavonoid metabolites (mainly flavan-3-ols, flavonols and their glycosides) decreased significantly in the shading treatments, while the contents of chlorophyll, β-carotene, neoxanthin and free amino acids, caffeine, benzoic acid derivatives and phenylpropanoids increased. Comparison between two shading treatments indicated that the lower temperature under Nano shading decreased flavonols and their glycosides but increased accumulation of flavan-3-ols and proanthocyanidins. The comparison also showed a greater effect of temperature on galloylation of catechins than light intensity. Taken together, there might be competition for substrates between the up- and down-stream branches of the phenylpropanoid/flavonoid pathway, which was influenced by light intensity and temperature. PMID:25390340

Metabolomic analysis using ultra-performance liquid chromatography-quadrupole-time of flight mass spectrometry (UPLC-Q-TOF MS) uncovers the effects of light intensity and temperature under shading treatments on the metabolites in tea.

PubMed

Zhang, Qunfeng; Shi, Yuanzhi; Ma, Lifeng; Yi, Xiaoyun; Ruan, Jianyun

2014-01-01

To investigate the effect of light intensity and temperature on the biosynthesis and accumulation of quality-related metabolites, field grown tea plants were shaded by Black Net and Nano-insulating Film (with additional 2-4°C cooling effect) with un-shaded plants as a control. Young shoots were subjected to UPLC-Q-TOF MS followed by multivariate statistical analysis. Most flavonoid metabolites (mainly flavan-3-ols, flavonols and their glycosides) decreased significantly in the shading treatments, while the contents of chlorophyll, β-carotene, neoxanthin and free amino acids, caffeine, benzoic acid derivatives and phenylpropanoids increased. Comparison between two shading treatments indicated that the lower temperature under Nano shading decreased flavonols and their glycosides but increased accumulation of flavan-3-ols and proanthocyanidins. The comparison also showed a greater effect of temperature on galloylation of catechins than light intensity. Taken together, there might be competition for substrates between the up- and down-stream branches of the phenylpropanoid/flavonoid pathway, which was influenced by light intensity and temperature.

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

NASA Astrophysics Data System (ADS)

Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

2018-02-01

The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

Molecular dynamics study of interfacial thermal transport between silicene and substrates.

PubMed

Zhang, Jingchao; Hong, Yang; Tong, Zhen; Xiao, Zhihuai; Bao, Hua; Yue, Yanan

2015-10-07

In this work, the interfacial thermal transport across silicene and various substrates, i.e., crystalline silicon (c-Si), amorphous silicon (a-Si), crystalline silica (c-SiO2) and amorphous silica (a-SiO2) are explored by classical molecular dynamics (MD) simulations. A transient pulsed heating technique is applied in this work to characterize the interfacial thermal resistance in all hybrid systems. It is reported that the interfacial thermal resistances between silicene and all substrates decrease nearly 40% with temperature from 100 K to 400 K, which is due to the enhanced phonon couplings from the anharmonicity effect. Analysis of phonon power spectra of all systems is performed to interpret simulation results. Contradictory to the traditional thought that amorphous structures tend to have poor thermal transport capabilities due to the disordered atomic configurations, it is calculated that amorphous silicon and silica substrates facilitate the interfacial thermal transport compared with their crystalline structures. Besides, the coupling effect from substrates can improve the interface thermal transport up to 43.5% for coupling strengths χ from 1.0 to 2.0. Our results provide fundamental knowledge and rational guidelines for the design and development of the next-generation silicene-based nanoelectronics and thermal interface materials.

Development of a novel non-contact inspection technique to detect micro cracks under the surface of a glass substrate by thermal stress-induced light scattering method

NASA Astrophysics Data System (ADS)

Sakata, Yoshitaro; Terasaki, Nao; Nonaka, Kazuhiro

2017-05-01

Fine polishing techniques, such as a chemical mechanical polishing treatment, are important techniques in glass substrate manufacturing. However, these techniques may cause micro cracks under the surface of glass substrates because they used mechanical friction. A stress-induced light scattering method (SILSM), which was combined with light scattering method and mechanical stress effects, was proposed for inspecting surfaces to detect polishing-induced micro cracks. However, in the conventional SILSM, samples need to be loaded with physical contact, and the loading point is invisible in transparent materials. Here, we introduced a novel non-contact SILSM using a heating device. A glass substrate was heated first, and then the light scattering intensity of micro cracks was detected by a cooled charge-couple device camera during the natural cooling process. Results clearly showed during the decreasing surface temperature of a glass substrate, appropriate thermal stress is generated for detecting micro cracks by using the SILSM and light scattering intensity from micro cracks changes. We confirmed that non-contact thermal SILSM (T-SILSM) can detect micro cracks under the surface of transparent materials.

Substrate Vibrations as Promoters of Chemical Reactivity on Metal Surfaces.

PubMed

Campbell, Victoria L; Chen, Nan; Guo, Han; Jackson, Bret; Utz, Arthur L

2015-12-17

Studies exploring how vibrational energy (Evib) promotes chemical reactivity most often focus on molecular reagents, leaving the role of substrate atom motion in heterogeneous interfacial chemistry underexplored. This combined theoretical and experimental study of methane dissociation on Ni(111) shows that lattice atom motion modulates the reaction barrier height during each surface atom's vibrational period, which leads to a strong variation in the reaction probability (S0) with surface temperature (Tsurf). State-resolved beam-surface scattering studies at Tsurf = 90 K show a sharp threshold in S0 at translational energy (Etrans) = 42 kJ/mol. When Etrans decreases from 42 kJ/mol to 34 kJ/mol, S0 decreases 1000-fold at Tsurf = 90 K, but only 2-fold at Tsurf = 475 K. Results highlight the mechanism for this effect, provide benchmarks for DFT calculations, and suggest the potential importance of surface atom induced barrier height modulation in heterogeneously catalyzed reactions, particularly on structurally labile nanoscale particles and defect sites.

Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Riascos, H.; Duque, J. S.; Orozco, S.

2017-01-01

ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

Tuning the metal-insulator transition of VO2 by introducing W dopants via a combinatorial approach

NASA Astrophysics Data System (ADS)

Liang, Yangang; Lee, Seunghun; Zhang, Xiaohang; Takeuchi, Ichiro

We have systematically studied the structural phase transition and the electronic properties of composition spread V1-xWxO2 (0 <= x <= 0.037) thin films fabricated on silicon (001) and c-cut sapphire substrates through combinatorial pulsed laser deposition of a V2O5 target and a WO3 target. Our in-situ temperature-dependent x-ray diffraction measurements reveal a gradual change in the film structure from a monoclinic phase to a tetragonal phase via an intermediate mixture of the two as the concentration of tungsten increases from 0% to 3.7% at 300 K. At 358 K, the film is found to be in a tetragonal phase for the entire composition range we studied. The results also suggest that the volume of the unit cell increases as the concentration of tungsten increases. Electrical transport results further show that both the phase transition temperature and the width of the hysteresis loop decrease with the increasing of the concentration of tungsten. Especially, epitaxial V1-xWxO2 films fabricated on c-cut sapphire substrates show narrower hysteresis loop compared to textured V1-xWxO2 films fabricated on Si (100) substrates. In addition, the Hall effect measurements on the epitaxial V1-xWxO2 thin films at various temperature points provide important information for the change in the electronic structure upon increasing the concentration of tungsten. This work was supported by CNAM.

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Cheemadan, Saheer; Santhosh Kumar, M. C.

2018-04-01

Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

NASA Astrophysics Data System (ADS)

Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

2016-03-01

A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

Recording and reading temperature tolerance in holographic data storage, in relation to the anisotropic thermal expansion of a photopolymer medium.

PubMed

Tanaka, Tomiji

2009-08-03

In holographic data storage, it is difficult to retrieve data if the temperature difference between recording and reading exceeds 2 K. To widen this tolerance, a compensation method--adjusting the wavelengths and incident directions of the recording and reading beams--has been proposed. In this paper, for the first time, a method for calculating the recording and reading temperature tolerance using this compensation is introduced. To widen the narrow tolerance, typically +/- 10 K, it is effective to increase the coefficient of thermal expansion (CTE) of the substrate or decrease the CTE of the photopolymer. Although reducing the Numerical aperture of the objective lens is also effective, it degrades the recording density.

The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

PubMed

Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

2015-12-09

In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

Emissions of biogenic volatile organic compounds from litter are coupled with changes in the microbial community composition

NASA Astrophysics Data System (ADS)

Hagel Svendsen, Sarah; Schostag, Morten; Voriskova, Jana; Kramshøj, Magnus; Priemé, Anders; Suhr Jacobsen, Carsten; Rinnan, Riikka

2017-04-01

Emissions of biogenic volatile organic compounds (BVOCs) from natural ecosystems have significant impact on atmospheric chemistry and belowground chemical processes. Most attention has been given to emissions from plants. However, several studies have found that soil, and especially the decomposing leaf and needle litter, emits substantial amounts of BVOCs. The contribution of litter to ecosystem BVOC emissions may be increasingly significant in the Arctic, where the living plant biomass is low, and the amount of litter increasing due to the expansion of deciduous vegetation in response to climate change. It is known that the types and amounts of BVOCs emitted from the soil are highly dependent on the microbial community composition and the type of substrate. In this study we measured emissions of BVOCs from the leaf litter of common arctic plant species at different temperatures. The BVOC measurements were coupled with an analysis of the relative abundance of dominating bacterial species (determined as operational taxonomic units, OTUs). Leaf litter from evergreen Cassiope tetragona and two species of deciduous Salix were collected from two arctic locations; one in the High Arctic and one in the Low Arctic. The litter was incubated in dark at 5 ?C. Over an eight week period the temperature was increased 7 ?C every two weeks, giving temperature incubations at 5 ?C, 12 ?C, 19 ?C and 26 ?C. Emissions of BVOCs from the litter were sampled in adsorbent cartridges weekly and analyzed using gas chromatography-mass spectrometry. The relative abundance of bacteria was determined at the end of the incubation at each temperature using DNA sequencing. Results showed that emissions of BVOCs belonging to different chemical functional groups responded differently to increasing temperatures and were highly dependent on the type of substrate. For instance, terpenoid emissions from the Cassiope litter increased with increasing temperature, whereas the emissions from the Salix litter decreased. Likewise, the relative abundance of bacteria depended on temperature and the type of substrate. Especially the actinobacteria showed strong increasing trends with increasing temperature in the Salix litter. Acidobacteria had much higher relative abundance in the Cassiope litter than in the Salix litter. Multivariate analyses were used to assess potential links between the BVOC and bacterial abundance datasets. Similar patterns in the BVOC emissions and bacterial community composition at different temperatures and for different substrates suggest that the differences in BVOC emissions, at least to some extent, are driven by changes in the microbial community composition.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

1994-01-01

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

1994-09-13

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

Effect of crystal structure on strontium titanate thin films and their dielectric properties

NASA Astrophysics Data System (ADS)

Kampangkeaw, Satreerat

Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible causes that make dielectric behavior in STO thin films different from the bulk. We characterized such film structures as lattice parameters, out-of-plane grain size, in-plane grain size, thickness, roughness, strains, and defects using ellipsometry, atomic force microscopy, and a high-resolution X-ray diffractometry. In plane grain size and percentage of defects were found to play a major role on the dielectric performance of the films.

Fast response of sprayed vanadium pentoxide (V2O5) nanorods towards nitrogen dioxide (NO2) gas detection

NASA Astrophysics Data System (ADS)

Mane, A. A.; Suryawanshi, M. P.; Kim, J. H.; Moholkar, A. V.

2017-05-01

The V2O5 nanorods have been successfully spray deposited at optimized substrate temperature of 400 °C onto the glass substrates using vanadium trichloride (VCl3) solution of different concentrations. The effect of solution concentration on the physicochemical and NO2 gas sensing properties of sprayed V2O5 nanorods is studied at different operating temperatures and gas concentrations. The XRD study reveals the formation of V2O5 having an orthorhombic symmetry. The FE-SEM micrographs show the nanorods-like morphology of V2O5. The AFM micrographs exhibit a well covered granular surface topography. For direct allowed transition, the band gap energy values are found to be decreased from 2.45 eV to 2.42 eV. The nanorods deposited with 30 mM solution concentration shows the maximum response of 24.2% for 100 ppm NO2 gas concentration at an operating temperature of 200 °C with response and recovery times of 13 s and 140 s, respectively. Finally, the chemisorption mechanism of NO2 gas on the V2O5 nanorods is discussed.

Hysteresis and change of transition temperature in thin films of Fe([Me{sub 2}Pyrz]{sub 3}BH){sub 2}, a new sublimable spin-crossover molecule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davesne, V.; Gruber, M.; Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, 76131 Karlsruhe

2015-05-21

Thin films of the spin-crossover (SCO) molecule Fe([Me{sub 2}Pyrz]{sub 3}BH){sub 2} (Fe-pyrz) were sublimed on Si/SiO{sub 2} and quartz substrates, and their properties investigated by X-ray absorption and photoemission spectroscopies, optical absorption, atomic force microscopy, and superconducting quantum interference device. Contrary to the previously studied Fe(phen){sub 2}(NCS){sub 2}, the films are not smooth but granular. The thin films qualitatively retain the typical SCO properties of the powder sample (SCO, thermal hysteresis, soft X-ray induced excited spin-state trapping, and light induced excited spin-state trapping) but present intriguing variations even in micrometer-thick films: the transition temperature decreases when the thickness is decreased,more » and the hysteresis is affected. We explain this behavior in the light of recent studies focusing on the role of surface energy in the thermodynamics of the spin transition in nano-structures. In the high-spin state at room temperature, the films have a large optical gap (∼5 eV), decreasing at thickness below 50 nm, possibly due to film morphology.« less

The influence of filament temperature and oxygen concentration on tungsten oxide nanostructures by hot filament metal oxide deposition

NASA Astrophysics Data System (ADS)

Lou, J.; Ye, B. J.; Weng, H. M.; Du, H. J.; Wang, Z. B.; Wang, X. P.

2008-08-01

Tungsten oxide (WOx) nanostructures were prepared by a hot filament chemical vapour deposition system and the temperature of the hot tungsten filaments was changed by steps of degrees. The morphology and average growth rate were indicated by scanning electron microscopy which showed that the morphology was highly related to the filament temperature (Tf) and the distance between the filaments and the polished Si (1 0 0) substrates (df). The influence of Tf on the crystalline nature was studied by x-ray diffraction and Raman spectroscopy. The evolution of stoichiometry and types of defects was indicated by x-ray photoelectron spectroscopy and slow positron implantation spectroscopy. When Tf was up to 1750 °C, tungsten oxide nanostructure was synthesized. A turning point of Tf was found at which the nature of crystallinity and of stoichiometry was the best. As Tf increased to 2100 °C or df decreased, the film crystallinity decreased; correspondingly, the component ratio of stoichiometry WO3 decreased and lots of vacancy agglomerates were present. In order to develop the chemical phase from substoichiometry to stoichiometry, the oxygen gas concentration in the mixture gas during deposition should be raised to an appropriate level.

NiMnGa/Si Shape Memory Bimorph Nanoactuation

NASA Astrophysics Data System (ADS)

Lambrecht, Franziska; Lay, Christian; Aseguinolaza, Iván R.; Chernenko, Volodymyr; Kohl, Manfred

2016-12-01

The size dependences of thermal bimorph and shape memory effect of nanoscale shape memory alloy (SMA)/Si bimorph actuators are investigated in situ in a scanning electron microscope and by finite element simulations. By combining silicon nanomachining and magnetron sputtering, freestanding NiMnGa/Si bimorph cantilever structures with film/substrate thickness of 200/250 nm and decreasing lateral dimensions are fabricated. Electrical resistance and mechanical beam bending tests upon direct Joule heating demonstrate martensitic phase transformation and reversible thermal bimorph effect, respectively. Corresponding characteristics are strongly affected by the large temperature gradient in the order of 50 K/µm forming along the nano bimorph cantilever upon electro-thermal actuation, which, in addition, depends on the size-dependent heat conductivity in the Si nano layer. Furthermore, the martensitic transformation temperatures show a size-dependent decrease by about 40 K for decreasing lateral dimensions down to 200 nm. The effects of heating temperature and stress distribution on the nanoactuation performance are analyzed by finite element simulations revealing thickness ratio of SMA/Si of 90/250 nm to achieve an optimum SME. Differential thermal expansion and thermo-elastic effects are discriminated by comparative measurements and simulations on Ni/Si bimorph reference actuators.

Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki

2018-01-01

Substrate temperature is one of the important parameters that affect the quality of deposited films. The monitoring of the substrate temperature is an important technique of controlling the deposition process precisely. In this study, the Si substrate temperature in high-power pulse magnetron sputtering (HPPMS) was measured by a noncontact method based on optical low-coherence interferometry (LCI). The measurement was simultaneously performed using an LCI system and a thermocouple (TC) as a contact measurement method. The difference in measured value between the LCI system and the TC was about 7.4 °C. The reproducibilities of measurement for the LCI system and TC were ±0.7 and ±2.0 °C, respectively. The heat influx from the plasma to the substrate was estimated using the temporal variation of substrate temperature and increased from 19.7 to 160.0 mW/cm2 with increasing target applied voltage. The major factor for the enhancement of the heat influx would be charged species such as ions and electrons owing to the high ionization degree of sputtered metal particles in HPPMS.

Evaporation of nanoscale water on a uniformly complete wetting surface at different temperatures.

PubMed

Guo, Yuwei; Wan, Rongzheng

2018-05-03

The evaporation of nanoscale water films on surfaces affects many processes in nature and industry. Using molecular dynamics (MD) simulations, we show the evaporation of a nanoscale water film on a uniformly complete wetting surface at different temperatures. With the increase in temperature, the growth of the water evaporation rate becomes slow. Analyses show that the hydrogen bond (H-bond) lifetimes and orientational autocorrelation times of the outermost water film decrease slowly with the increase in temperature. Compared to a thicker water film, the H-bond lifetimes and orientational autocorrelation times of a monolayer water film are much slower. This suggests that the lower evaporation rate of the monolayer water film on a uniformly complete wetting surface may be caused by the constriction of the water rotation due to the substrate. This finding may be helpful for controlling nanoscale water evaporation within a certain range of temperatures.

Low-Temperature Electrical Characteristics of Si-Based Device with New Tetrakis NiPc-SNS Active Layer

NASA Astrophysics Data System (ADS)

Yavuz, Arzu Büyükyağci; Carbas, Buket Bezgın; Sönmezoğlu, Savaş; Soylu, Murat

2016-01-01

A new tetrakis 4-(2,5-di-2-thiophen-2-yl-pyrrol-1-yl)-substituted nickel phthalocyanine (NiPc-SNS) has been synthesized. This synthesized NiPc-SNS thin film was deposited on p-type Si substrate using the spin coating method (SCM) to fabricate a NiPc-SNS/ p-Si heterojunction diode. The temperature-dependent electrical characteristics of the NiPc-SNS/ p-Si heterojunction with good rectifying behavior were investigated by current-voltage ( I- V) measurements between 50 K and 300 K. The results indicate that the ideality factor decreases while the barrier height increases with increasing temperature. The barrier inhomogeneity across the NiPc-SNS/ p-Si heterojunction reveals a Gaussian distribution at low temperatures. These results provide further evidence of the more complicated mechanisms occurring in this heterojunction. Based on these findings, NiPc-SNS/ p-Si junction diodes are feasible for use in low-temperature applications.

Wettability of eutectic NaLiCO3 salt on magnesium oxide substrates at 778 K

NASA Astrophysics Data System (ADS)

Li, Chuan; Li, Qi; Cao, Hui; Leng, Guanghui; Li, Yongliang; Wang, Li; Zheng, Lifang; Ding, Yulong

2018-06-01

We investigated the wetting behavior of a eutectic carbonate salt of NaLiCO3 on MgO substrates at an elevated temperature of 778 K by measuring contact angle with a sessile drop method. Both sintered and non-sintered MgO were prepared and used as the substrates. The sintered substrates were obtained by sintering compacted MgO powders at 500-1300 °C. For comparison purposes, a single crystal MgO substrate was also used in the work. The different sintering temperatures provided MgO substrates with different structures, allowing their effects on salt penetration and hence wettability and surface energy to be investigated. A scanning electron microscope equipped with energy dispersive spectrometry and an atomic force microscope were used to observe the morphology and structures of the MgO substrates as well as the salt penetration. The results showed a good wettability of the carbonate salt on both the sintered and non-sintered MgO substrates and the wettability depended strongly on the structure of the substrates. The non-sintered MgO substrate has a loose surface particle packing with large pores and crevices, leading to significant salt infiltration, and the corresponding contact angle was measured to be ∼25°. The contact angle of the salt on the sintered MgO substrates increased with an increase in the sintering temperature of the MgO substrate, and the contact angle of the salt on the single crystal substrate was the highest at ∼40°. The effect of the sintering temperature for making the MgO substrate could be linked to the surface energy, and the linkage is validated by the AFM measurements of the adhesion forces of the MgO substrates.

Study on Thermochromic VO2 Films Grown on ZnO-Coated Glass Substrates for “Smart Windows”

NASA Astrophysics Data System (ADS)

Kato, Kazuhiro; Song, Pung Keun; Odaka, Hidehumi; Shigesato, Yuzo

2003-10-01

Vanadium dioxide (VO2) is one of the most attractive thermochromic materials, which show large changes in optical and electrical properties at the transition temperature (Tt) close to the atmospheric temperature (approximately 340 K). We already reported for VO2 deposition by rf magnetron sputtering using V2O3 or V2O5 targets that VO2 films thicker than 400 nm showed high thermochromic performance, whereas the VO2 films thinner than 200 nm did not show such performance because of their poor crystallinity and off-stoichiometry. In this study, very thin thermochromic VO2 films with thicknesses of about 50 nm were successfully deposited using highly < 001>-preferred oriented ZnO polycrystalline films as a buffer layer between the VO2 film and glass substrate (VO2/ZnO/glass) because of the heteroepitaxial growth of VO2 polycrystalline films. W-doped VO2 films were also deposited on the ZnO-coated glass substrates (ZnO/glass) by cosputtering. It was confirmed that W doping for thin VO2 films deposited on the ZnO/glass can decrease Tt systematically. Such very thin VO2 films should have high potential for application in “smart windows”.

Effect of thickness on electrical properties of SILAR deposited SnS thin films

NASA Astrophysics Data System (ADS)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

Lead-free solder

DOEpatents

Anderson, Iver E.; Terpstra, Robert L.

2001-05-15

A Sn--Ag--Cu eutectic alloy is modified with one or more low level and low cost alloy additions to enhance high temperature microstructural stability and thermal-mechanical fatigue strength without decreasing solderability. Purposeful fourth or fifth element additions in the collective amount not exceeding about 1 weight % (wt. %) are added to Sn--Ag--Cu eutectic solder alloy based on the ternary eutectic Sn--4.7%Ag--1.7%Cu (wt. %) and are selected from the group consisting essentially of Ni, Fe, and like-acting elements as modifiers of the intermetallic interface between the solder and substrate to improve high temperature solder joint microstructural stability and solder joint thermal-mechanical fatigue strength.

Au doping effects on electrical and optical properties of vanadium dioxides

NASA Astrophysics Data System (ADS)

Zhu, YaBin; He, Fan; Na, Jie

2012-03-01

Vanadium dioxides were fabricated on normal glass substrates using reactive radio frequency (RF) magnetron sputtering. The oxygen flow volume and annealed temperatures as growth parameters are systematically investigated. The electrical and optical properties of VO2 and Au:VO2 thin films with different growth conditions are discussed. The semiconductor-metal phase transition temperature decreased by ˜10°C for the sample with Au doping compared to the sample without Au doping. However, the optical transmittance of Au:VO2 thin films is much lower than that of bare VO2. These results show that Au doping has a marked effect on the electrical and optical properties.

Development of a low pressure microwave excited plasma and its application to the formation of microcrystalline silicon films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kikukawa, Daisuke; Hori, Masaru; Honma, Koichiro

2006-11-15

Microwave excited plasma source operating at a low pressure of 1.5 Pa was newly developed. This plasma source was successfully applied to the formation of hydrogenated microcrystalline silicon films in a glass substrate with a mixture gas of silane (SiH{sub 4}), hydrogen (H{sub 2}), and xenon (Xe). It was found that the crystallinity of films was dramatically improved with decreasing pressure. The crystalline fraction was evaluated to be 82% at a substrate temperature of 400 deg. C, a mixture gas of SiH{sub 4}/H{sub 2}/Xe: 5/200/30 SCCM, and a total pressure of 1.5 Pa by Raman spectroscopy. The absolute density ofmore » hydrogen atoms and the behavior of higher radicals and molecules in the mixture gas were evaluated using vacuum ultraviolet absorption spectroscopy and quadrupole mass spectrometer, respectively. H atom densities were of the order of 10{sup 11} cm{sup -3}. The fraction of H atom density increased, while higher radicals and molecules decreased with decrease in the total pressure. The increase in H atom density and decrease in higher radicals and molecules improved the crystallinity of films in low pressures below 10 Pa.« less

Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

PubMed Central

Mahadeva, Sreekanth K.; Fan, Jincheng; Biswas, Anis; Sreelatha, K.S.; Belova, Lyubov; Rao, K.V.

2013-01-01

We report a systematic study of room-temperature ferromagnetism (RTFM) in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2) are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2) ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS) value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies. PMID:28348346

Developing upconversion nanoparticle-based smart substrates for remote temperature sensing

NASA Astrophysics Data System (ADS)

Coker, Zachary; Marble, Kassie; Alkahtani, Masfer; Hemmer, Philip; Yakovlev, Vladislav V.

2018-02-01

Recent developments in understanding of nanomaterial behaviors and synthesis have led to their application across a wide range of commercial and scientific applications. Recent investigations span from applications in nanomedicine and the development of novel drug delivery systems to nanoelectronics and biosensors. In this study, we propose the application of a newly engineered temperature sensitive water-based bio-compatible core/shell up-conversion nanoparticle (UCNP) in the development of a smart substrate for remote temperature sensing. We developed this smart substrate by dispersing functionalized nanoparticles into a polymer solution and then spin-coating the solution onto one side of a microscope slide to form a thin film substrate layer of evenly dispersed nanoparticles. By using spin-coating to deposit the particle solution we both create a uniform surface for the substrate while simultaneously avoid undesired particle agglomeration. Through this investigation, we have determined the sensitivity and capabilities of this smart substrate and conclude that further development can lead to a greater range of applications for this type smart substrate and use in remote temperature sensing in conjunction with other microscopy and spectroscopy investigations.

Candida rugosa lipase LIP1-catalyzed transesterification to produce human milk fat substitute.

PubMed

Srivastava, Anita; Akoh, Casimir C; Chang, Shu-Wei; Lee, Guan-Chiun; Shaw, Jei-Fu

2006-07-12

Structured lipids (SLs) containing palmitic and oleic acids were synthesized by transesterification of tripalmitin with either oleic acid or methyl oleate as acyl donor. This SL with palmitic acid at the sn-2 position and oleic acid at sn-1,3 positions is similar in structure to human milk fat triacylglycerol. LIP1, an isoform of Candida rugosa lipase (CRL), was used as biocatalyst. The effects of reaction temperature, substrate molar ratio, and time on incorporation of oleic acid were investigated. Reaction time and temperature were set at 6, 12, and 24 h, and 35, 45, and 55 degrees C, respectively. Substrate molar ratio was varied from 1:1 to 1:4. The highest incorporation of oleic acid (37.7%) was at 45 degrees C with methyl oleate as acyl donor. Oleic acid resulted in slightly lesser (26.3%) incorporation. Generally, higher percentage incorporation of oleic acid was observed with methyl oleate (transesterification) than with oleic acid (acidolysis). In both cases percentage incorporation increased with reaction time. Incorporation decreased with increase in temperature above 45 degrees C. Initially, oleic acid incorporation increased with increase in substrate molar ratio up to 1:3. LIP1 was also compared with Lipozyme RM IM as biocatalysts. The tested reaction parameters were selected on the basis of maximum incorporation of C18:1 obtained during optimization of LIP1 reaction conditions. Reaction temperature was maintained at 45, 55, and 65 degrees C. Lipozyme RM IM gave highest oleic acid incorporation (49.4%) at 65 degrees C with methyl oleate as acyl donor. Statistically significant (P < 0.05) differences were observed for both enzymes. SL prepared using Lipozyme RM IM may be more suitable for possible use in human milk fat substitutes.

Chemistry and long-term decomposition of roots of Douglas-fir grown under elevated atmospheric carbon dioxide and warming conditions.

PubMed

Chen, H; Rygiewicz, P T; Johnson, M G; Harmon, M E; Tian, H; Tang, J W

2008-01-01

Elevated atmospheric CO(2) concentrations and warming may affect the quality of litters of forest plants and their subsequent decomposition in ecosystems, thereby potentially affecting the global carbon cycle. However, few data on root tissues are available to test this feedback to the atmosphere. In this study, we used fine (diameter < or = 2 mm) and small (2-10 mm) roots of Douglas-fir (Pseudotsuga menziesii (Mirb.) Franco) seedlings that were grown for 4 yr in a 2 x 2 factorial experiment: ambient or elevated (+ 180 ppm) atmospheric CO(2) concentrations, and ambient or elevated (+3.8 degrees C) atmospheric temperature. Exposure to elevated CO(2) significantly increased water-soluble extractives concentration (%WSE), but had little effect on the concentration of N, cellulose, and lignin of roots. Elevated temperature had no effect on substrate quality except for increasing %WSE and decreasing the %lignin content of fine roots. No significant interaction was found between CO(2) and temperature treatments on substrate quality, except for %WSE of the fine roots. Short-term (< or = 9 mo) root decomposition in the field indicated that the roots from the ambient CO(2) and ambient temperature treatment had the slowest rate. However, over a longer period of incubation (9-36 mo) the influence of initial substrate quality on root decomposition diminished. Instead, the location of the field incubation sites exhibited significant control on decomposition. Roots at the warmer, low elevation site decomposed significantly faster than the ones at the cooler, high elevation site. This study indicates that short-term decomposition and long-term responses are not similar. It also suggests that increasing atmospheric CO(2) had little effect on the carbon storage of Douglas-fir old-growth forests of the Pacific Northwest.

Multivariate regulation of soil CO2 and N2 O pulse emissions from agricultural soils.

PubMed

Liang, Liyin L; Grantz, David A; Jenerette, G Darrel

2016-03-01

Climate and land-use models project increasing occurrence of high temperature and water deficit in both agricultural production systems and terrestrial ecosystems. Episodic soil wetting and subsequent drying may increase the occurrence and magnitude of pulsed biogeochemical activity, affecting carbon (C) and nitrogen (N) cycles and influencing greenhouse gas (GHG) emissions. In this study, we provide the first data to explore the responses of carbon dioxide (CO2 ) and nitrous oxide (N2 O) fluxes to (i) temperature, (ii) soil water content as percent water holding capacity (%WHC), (iii) substrate availability throughout, and (iv) multiple soil drying and rewetting (DW) events. Each of these factors and their interactions exerted effects on GHG emissions over a range of four (CO2 ) and six (N2 O) orders of magnitude. Maximal CO2 and N2 O fluxes were observed in environments combining intermediate %WHC, elevated temperature, and sufficient substrate availability. Amendments of C and N and their interactions significantly affected CO2 and N2 O fluxes and altered their temperature sensitivities (Q10 ) over successive DW cycles. C amendments significantly enhanced CO2 flux, reduced N2 O flux, and decreased the Q10 of both. N amendments had no effect on CO2 flux and increased N2 O flux, while significantly depressing the Q10 for CO2 , and having no effect on the Q10 for N2 O. The dynamics across DW cycles could be attributed to changes in soil microbial communities as the different responses to wetting events in specific group of microorganisms, to the altered substrate availabilities, or to both. The complex interactions among parameters influencing trace gas fluxes should be incorporated into next generation earth system models to improve estimation of GHG emissions. © 2015 John Wiley & Sons Ltd.

Experimental study of high-temperature properties of zirconium carbide as a protective material for nuclear power and aerospace technologies (from 2000 to 5000 K)

NASA Astrophysics Data System (ADS)

Savvatimskiy, A. I.; Onufriev, S. V.; Muboyadzhyan, S. A.; Seredkin, N. N.

2017-11-01

The temperature dependences of the thermal and electro physical properties of the zirconium carbide ZrC + C and ZrCa0.95 were studied in the temperature range 2000-5000 K. The Zr+C specimens were in the form of thin layers sputtered on quarts substrate and ZrC0.95 specimens were in the form of plates cut off from the sintered block. The properties are measured: temperature and heat of fusion, enthalpy, specific heat and resistivity, referred to the initial dimensions. A steep increase in the specific heat of these substances before melting and a sharp decrease after melting were observed at a heating rate of ∼ 108 K/s, which is possibly due to the formation of Frenkel pair defects in the specimens.

Dislocation Density Reduction in Cadmium Telluride and Mercury Cadmium Telluride Grown on Silicon Using Thermal Cycle Annealing

NASA Astrophysics Data System (ADS)

Farrell, Stuart Bennett

Mercury Cadmium Telluride (HgCdTe) is a material of great importance for infrared focal plane array applications. In order to produce large format detector arrays this material needs to be grown on a large area substrate, with silicon being the most mature substrate, it is the optimal choice for large format arrays. To help mitigate the effect of the lattice mismatch between the two materials, cadmium telluride (CdTe) is used as a buffer layer. The CdTe itself has nearly the same lattice mismatch (19.3%) to silicon, but due to the technological advantages it offers and compatibility with HgCdTe, it is the best buffer layer choice. The lattice mismatch between HgCdTe/CdTe and the silicon substrate leads to the formation of dislocations at densities in the mid 106 to low 107 cm-2 range in the epilayers. Such a high dislocation density greatly effects detector device performance quantities such as operability and sensitivity. Hence, the dislocation density should be brought down by at least an order of magnitude by adopting novel in situ and ex situ material processing techniques. In this work, in situ and ex situ thermal cycle annealing (TCA) methods have been used to decrease dislocation density in CdTe and HgCdTe. During the molecular beam epitaxial (MBE) growth of the CdTe buffer layer, the growth was interrupted and the layer was subjected to an annealing cycle within the growth chamber under tellurium overpressure. During the annealing cycle the temperature is raised to beyond the growth temperature (290 → 550 °C) and then allowed to cool before resuming growth again. This process was repeated several times during the growth. After growth, a portion of the material was subjected to a dislocation decoration etch in order to count the etch pit density (EPD) which has a direct correspondence with the dislocation density in the crystal. The crystalline quality was also characterized by x-ray diffraction rocking curves and photoluminescence. The in situ TCA resulted in almost a two order of magnitude reduction in the dislocation density, and factor of two reduction in the full width at half maximum of the x-ray rocking curves. Photoluminescence also suggested a decrease in the number of dislocations present in the material. This decrease is attributed to the movement of the dislocations during the annealing cycles and their subsequent interaction and annihilation. To decrease the dislocation density in HgCdTe layers grown on CdTe/Si composite substrates, ex situ TCA has been performed in a sealed quartz ampoule under a mercury overpressure in a conventional clam-shell furnace. The reduction in the dislocation density has been studied as a function of growth/annealing parameters such as the initial (as grown) dislocation density, buffer layer quality, Hg overpressure, annealing temperature, annealing duration, and the number of annealing cycles. It was found that the primary parameters that affect dislocation density reduction are the annealing temperature and the number of annealing cycles. Some secondary affects were observed by varying the duration spent at the maximum annealing temperature. Parameters such as the initial dislocation density and buffer layer quality did not play a significant role in dislocation reduction. Though no correlation between Hg overpressure and dislocation density was found, it did play a vital role in maintaining the quality of the surface. By using the ex situ TCA, a dislocation density of 1 x 106 cm-2 could be reliably and consistently achieved in HgCdTe layers that had a starting density ranging from 0.5 -- 3 x 107 cm-2. Examination of the annealing parameters revealed an exponential decay in the dislocation density as a function of increasing number of annealing cycles. In addition, a similar exponential decay was observed between the dislocation density and the annealing temperature. The decrease in the dislocation density is once again attributed to moving dislocations that interact and annihilate. This behavior was modeled using a second order reaction equation. It was found that the results of the model closely agreed with the experimental values for a wide range of annealing temperatures and number of annealing cycles.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, F.; Hoard, R.W.

1994-05-10

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, Fred; Hoard, Ronald W.

1994-01-01

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

HA/Bioglass composite films deposited by pulsed laser with different substrate temperature

NASA Astrophysics Data System (ADS)

Wang, D. G.; Chen, C. Z.; Jin, Q. P.; Li, H. C.; Pan, Y. K.

2014-03-01

In this experiment, the HA/Bioglass composite films on Ti-6Al-4V were deposited by a pulsed laser at Ar atmosphere, and the influence of substrate temperature on the morphology, phase constitutions, bonding configurations and adhesive strength of the films was studied. The obtained films were characterized by an electron probe microanalyzer (EPMA), scanning electron microscope (SEM), X-ray diffractometer (XRD), Fourier transform infrared spectrometer (FTIR), scratch apparatus, and so on. The results show that the amount of the droplets, the crystallinity, and the critical load of the deposited films all increase with the increase of the substrate temperature; however, the substrate temperature has little influence on the functional groups of the films.

High temperature electronic gain device

DOEpatents

McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

1979-01-01

An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

Thin transparent conducting films of cadmium stannate

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.

2001-01-01

A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd.sub.2 SnO.sub.4 and CdS layers to a temperature sufficient to induce crystallization of the Cd.sub.2 SnO.sub.4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd.sub.2 SnO.sub.4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600.degree. C., allowing the use of inexpensive soda lime glass substrates.

Laser-assisted selective fusing of thermal sprayed Ni-based self-fluxing alloys by using high-power diode lasers

NASA Astrophysics Data System (ADS)

Chun, Eun-Joon; Kim, Min-Su; Nishikawa, Hiroshi; Park, Changkyoo; Suh, Jeong

2018-03-01

Fusing treatment of Ni-based self-fluxing alloys (Metco-16C and 1276F) was performed using high-power diode lasers to control the temperature of the substrate's surface in real time. The effects of the fusing treatment temperature on the microstructural change and hardness distribution were also investigated. For Metco-16C and 1276F, the macrostructural inhomogeneity (voids) within the thermal sprayed layer decreased considerably as the fusing temperature increased. For both self-fluxing alloys, the optimal temperature for fusing was approximately 1423 K (for Metco-16C) and 1373 K (for 1276F), both of which are within the solid state temperature range; these temperatures maximize the alloy hardness together with the macrostructural homogeneity. In this temperature range, the microstructure consists of a lamellar-structured matrix phase with fine (<5 μm) carbides and borides. Selective fusing for a thermal sprayed layer 0.2-0.5 mm in thickness could be successfully achieved in a high-power diode laser system.

Effects of temperature and surface contamination on D retention in ultrathin Li films on TZM

DOE PAGES

Capece, A. M.; Roszell, J. P.; Skinner, C. H.; ...

2014-10-29

Here in this work, we investigate deuterium retention at the Mo-Li interface by studying thin Li films three monolayers thick on a TZM Mo alloy. Li films at temperatures between 315 and 460 K were exposed to a deuterium ion beam and D retention was measured using temperature programmed desorption. In the absence of oxygen, D is retained as LiD, and the relative amount of retained D decreases with increasing substrate temperature. In three-monolayer thick lithium oxide films, the amount of D retained was 2.5 times higher than the amount retained as LiD in the metallic Li film. However, oxygenmore » reduces the thermal stability of D in the film, causing D 2O and D 2 to be released from the surface at temperatures 150-200 K below the LiD decomposition temperature. These results highlight the importance of maintaining a metallic Li layer for high D retention in Li films on TZM at elevated temperatures.« less

Effects of temperature and surface contamination on D retention in ultrathin Li films on TZM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capece, A. M.; Roszell, J. P.; Skinner, C. H.

Here in this work, we investigate deuterium retention at the Mo-Li interface by studying thin Li films three monolayers thick on a TZM Mo alloy. Li films at temperatures between 315 and 460 K were exposed to a deuterium ion beam and D retention was measured using temperature programmed desorption. In the absence of oxygen, D is retained as LiD, and the relative amount of retained D decreases with increasing substrate temperature. In three-monolayer thick lithium oxide films, the amount of D retained was 2.5 times higher than the amount retained as LiD in the metallic Li film. However, oxygenmore » reduces the thermal stability of D in the film, causing D 2O and D 2 to be released from the surface at temperatures 150-200 K below the LiD decomposition temperature. These results highlight the importance of maintaining a metallic Li layer for high D retention in Li films on TZM at elevated temperatures.« less

Preparation and tribological behavior of Ni-graphene composite coating under room temperature

NASA Astrophysics Data System (ADS)

Chen, Juanjuan; Li, Jianliang; Xiong, Dangsheng; He, Yong; Ji, Yujuan; Qin, Yongkun

2016-01-01

In this paper, Ni-graphene composite coatings with different graphene addition amounts were prepared on 45 steel disk by using dipulse composite electrodeposition technology. Meanwhile, the influence of plating time, bath temperature and load on friction and wear of the coating was studied. The tribological behavior of composite coating was tested against a Si3N4 ceramic ball under dry condition. Cross-sectional morphologies showed that Ni-graphene coating was successfully coated on the substrate with an average thickness of 85 ± 5 μm. XRD analysis concluded that with the increase of addition amount of graphene, the average crystallite size of coating decreased. EDS analyses and Raman spectra proved the presence of graphene. Friction coefficient of composite coating decreased with the increase of graphene addition amounts, while the hardness increased. Meanwhile, the wear resistance of composite coating improved. The optimum experimental conditions were obtained.

Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

NASA Astrophysics Data System (ADS)

Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

2017-07-01

We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

Fiber Bragg grating cryogenic temperature sensors

NASA Astrophysics Data System (ADS)

Gupta, Sanjay; Mizunami, Toru; Yamao, Takashi; Shimomura, Teruo

1996-09-01

Temperature sensing to as low as 80 K was demonstrated with 1.55- mu m fiber Bragg gratings. The gratings were bonded on substrates to increase sensitivity, and a shift of the reflection wavelength was measured. The temperature sensitivity was 0.02 nm/K at 100 K when an aluminum substrate was used and 0.04 nm/K at 100 K when a poly(methyl methacrylate) substrate was used. These values are smaller than those at room temperature because of the nonlinearity of both the thermal expansion and the thermo-optic effect. Extension to the liquid helium temperature is also discussed.

Numerical Study of Suspension HVOF Spray and Particle Behavior Near Flat and Cylindrical Substrates

NASA Astrophysics Data System (ADS)

Jadidi, M.; Yeganeh, A. Zabihi; Dolatabadi, A.

2018-01-01

In thermal spray processes, it is demonstrated that substrate shape and location have significant effects on particle in-flight behavior and coatings quality. In the present work, the suspension high-velocity oxygen fuel (HVOF) spraying process is modeled using a three-dimensional two-way coupled Eulerian-Lagrangian approach. Flat and cylindrical substrates are placed at different standoff distances, and particles characteristics near the substrates and upon impact are studied. Suspension is a mixture of ethanol, ethylene glycol, and mullite solid powder (3Al2O3·2SiO2) in this study. Suspension droplets with predefined size distribution are injected into the combustion chamber, and the droplet breakup phenomenon is simulated using Taylor analogy breakup model. Furthermore, the eddy dissipation model is used to model the premixed combustion of oxygen-propylene, and non-premixed combustion of oxygen-ethanol and oxygen-ethylene glycol. To simulate the gas phase turbulence, the realizable k-ɛ model is applied. In addition, as soon as the breakup and combustion phenomena are completed, the solid/molten mullite particles are tracked through the domain. It is shown that as the standoff distance increases the particle temperature and velocity decrease and the particle trajectory deviation becomes more significant. The effect of stagnation region on the particle velocity and temperature is also discussed in detail. The catch rate, which is defined as the ratio of the mass of landed particles to injected particles, is calculated for different substrate shapes and standoff distances in this study. The numerical results presented here is consistent with the experimental data in the literature for the same operating conditions.

Process for producing large grain cadmium telluride

DOEpatents

Hasoon, Falah S.; Nelson, Art J.

1996-01-01

A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

Deposition method for producing silicon carbide high-temperature semiconductors

DOEpatents

Hsu, George C.; Rohatgi, Naresh K.

1987-01-01

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Holocene Substrate Influences on Plant and Fire Response to Climate Change

NASA Astrophysics Data System (ADS)

Briles, C.; Whitlock, C. L.

2011-12-01

The role of substrates in facilitating plant responses to climate change in the past has received little attention. Ecological studies, documenting the relative role of fertile and infertile substrates in mediating the effects of climate change, lack the temporal information that paleoecological lake studies provide on how plants have responded under equal, larger and more rapid past climate events than today. In this paper, pollen and macroscopic charcoal preserved in the sediments of eight lakes surrounded by infertile ultramafic soils and more fertile soils in the Klamath Mountains of northern California were analyzed. Comparison of late-Quaternary paleoecological sites suggests that infertile and fertile substrates supported distinctly different plant communities. Trees and shrubs on infertile substrates were less responsive to climate change than those on fertile substrates, with the only major compositional change occurring at the glacial/interglacial transition (~11.5ka), when temperature rose 5oC. Trees and shrubs on fertile substrates were more responsive to climate changes, and tracked climate by moving along elevational gradients, including during more recent climate events such as the Little Ice Age and Medieval Climate Anomaly. Fire regimes were similar until 4ka on both substrate types. After 4ka, understory fuels on infertile substrates became sparse and fire activity decreased, while on fertile substrates forests became increasingly denser and fire activity increased. The complacency of plant communities on infertile sites to climate change contrasts with the individualistic and rapid adjustments of species on fertile sites. The findings differ from observations on shorter time scales that show the most change in herb cover and richness in the last 60 years on infertile substrates. Thus, the paleorecord provides unique long-term ecological data necessary to evaluate the response of plants to future climate change under different levels of soil fertility.

Two endogenous substrates for polyphenoloxidase in pericarp tissues of postharvest rambutan fruit.

PubMed

Sun, Jian; Su, Weiqiang; Peng, Hongxiang; Zhu, Jianhua; Xu, Liangxiong; Bruñá, Nuria Martí

2010-08-01

The catalytic oxidation of phenolic substrates by polyphenoloxidase (PPO) causes pericarp browning of postharvest rambutan fruit. In the present study, PPO and its endogenous substrates were extracted from rambutan pericarp tissues (RPT). The substrate extracts were sequentially partitioned with ethyl acetate and n-butanol. The analysis of total phenolic content showed that the most phenolic compounds were distributed in ethyl acetate fraction. By high-performance liquid chromatography (HPLC), (-)-epicatechin (EC) and proanthocyanidin A2 (PA2) were identified from this fraction. After reacting with rambutan PPO, EC turned brown rapidly within 10 min, indicating that it was a significant endogenous substrate. Although PA2 could also be oxidized by the PPO, it turned brown very slowly. In addition, because EC and PA2 were continually catalyzed into browning products by PPO during storage of the fruit at 4 and 25 degrees C, their contents in RPT gradually declined with the extended storage time. It was further observed that both substrate contents in rambutan fruit storing at 25 degrees C decreased more rapidly than that storing at 4 degrees C, suggesting that low temperature inhibited the catalytic oxidation of substrates so as to slow down pericarp browning. Practical Application: Pericarp browning is a serious problem to storage and transport of harvested rambutan fruit. A generally accepted opinion on the browning mechanism is the oxidation of phenolic substrates by PPO. Ascertaining PPO substrates will effectively help us to control enzymatic reaction by chemical methods so as to delay or even prevent pericarp browning of harvested rambutan fruit.

Temperature controlled properties of sub-micron thin SnS films

NASA Astrophysics Data System (ADS)

Nwankwo, Stephen N.; Campbell, Stephen; Reddy, Ramakrishna K. T.; Beattie, Neil S.; Barrioz, Vincent; Zoppi, Guillaume

2018-06-01

Tin sulphide (SnS) thin films deposited by thermal evaporation on glass substrates are studied for different substrate temperatures. The increase in substrate temperature results in the increase of the crystallite size and change in orientation of the films. The crystal structure of the films is that of SnS only and for temperatures ≤300 °C the films are of random orientation, whereas for higher temperatures the films become (040) oriented. The variation of Sn/S composition was accompanied by a reduction in optical energy bandgap from 1.47 to 1.31 eV as the substrate temperature increases. The Urbach energy was found stable at 0.169 ± 0.002 eV for temperature up to 350 °C. Photoluminescence emission was observed only for films exhibiting stoichiometric properties and shows that a precise control of the film composition is critical to fabricate devices while an increase in grain size will be essential to achieve high efficiency.

Articles for high temperature service and methods for their manufacture

DOEpatents

Sarrafi-Nour, Reza; Meschter, Peter Joel; Johnson, Curtis Alan; Luthra, Krishan Lal; Rosenzweig, Larry Steven

2016-06-14

An article for use in aggressive environments is presented. In one embodiment, the article comprises a substrate and a self-sealing and substantially hermetic sealing layer comprising an alkaline-earth aluminosilicate disposed over the bondcoat. The substrate may be any high-temperature material, including, for instance, silicon-bearing ceramics and ceramic matrix composites. A method for making such articles is also presented. The method comprises providing a substrate; disposing a self-sealing alkaline-earth aluminosilicate layer over the substrate; and heating the sealing layer to a sealing temperature at which at least a portion of the sealing layer will flow.

Data on the detail information of influence of substrate temperature on the film morphology and photovoltaic performance of non-fullerene organic solar cells.

PubMed

Zhang, Jicheng; Xie, SuFei; Lu, Zhen; Wu, Yang; Xiao, Hongmei; Zhang, Xuejuan; Li, Guangwu; Li, Cuihong; Chen, Xuebo; Ma, Wei; Bo, Zhishan

2017-10-01

This data contains additional data related to the article "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" (Jicheng Zhang et al., In press) [1]. Data include measurement and characterization instruments and condition, detail condition to fabricate norfullerene solar cell devices, hole-only and electron-only devices. Detail condition about how to control the film morphology of devices via tuning the temperature of substrates was also displayed. More information and more convincing data about the change of film morphology for active layers fabricated from different temperature, which is attached to the research article of "Influence of Substrate Temperature on the Film Morphology and Photovoltaic Performance of Non-fullerene Organic Solar Cells" was given.

Method and apparatus for forming conformal SiN.sub.x films

DOEpatents

Wang, Qi

2007-11-27

A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

DOEpatents

Carlson, David E.

1982-01-01

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

The role of surface passivation in controlling Ge nanowire faceting

DOE PAGES

Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; ...

2015-11-05

In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of themore » precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.« less

Novel Phenylethynyl Imide Silanes as Coupling Agents for Titanium Alloy

NASA Technical Reports Server (NTRS)

Park, C.; Lowther, S. E.; Smith, J. G., Jr.; Conell, J. W.; Hergenrother, P. M.; SaintClair, T. L.

2004-01-01

The durability of titanium (Ti) alloys bonded with high temperature adhesives such as polyimides has failed to attain the level of performance required for many applications. The problem to a large part is attributed to the instability of the surface treatment on the Ti substrate. Although Ti alloy adhesive specimens with surface treatments such as chromic acid anodization, Pasa-Jell, Turco, etc. have provided high initial mechanical properties, these properties have decreased as a function of aging at ambient temperature and faster, when aged at elevated temperatures or in a hot-wet environment. As part of the High Speed Civil Transport program where Ti honeycomb sandwich structure must perform for 60,000 hours at 177 C, work was directed to the development of environmentally safe, durable Ti alloy surface treatments.

Effect of thermal annealing on structure and optical band gap of amorphous Se{sub 72}Te{sub 25}Sb{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, D. K., E-mail: dwivedidkphys@rediffmail.com; Pathak, H. P., E-mail: dwivedidkphys@rediffmail.com; Shukla, Nitesh

2014-04-24

Thin films of a−Se{sub 72}Te{sub 25}Sb{sub 3} were prepared by vacuum evaporation technique in a base pressure of 10{sup −6} Torr on to well cleaned glass substrate. a−Se{sub 72}Te{sub 25}Sb{sub 3} thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical band gap of as prepared and annealed films as a function of photon energy in the wavelength range 400–1100 nm has been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.

Low-temperature roll-to-roll coating procedure of dye-sensitized solar cell photoelectrodes on flexible polymer-based substrates

NASA Astrophysics Data System (ADS)

Tinguely, Jean-Claude; Solarska, Renata; Braun, Artur; Graule, Thomas

2011-04-01

A new approach for the large-scale production of flexible photoelectrodes for dye-sensitized solar cells (DSSCs) is presented by roll-to-roll coating of a titanium dioxide nanodispersion containing the block copolymer 'Pluronic®' (PEOx-PPOy-PEOx, PEO: poly(ethylene oxide), PPO: poly(propylene oxide)). Functional DSSCs were assembled and the different coating procedures compared with respect to their solar power conversion efficiency. It is shown that the binder 'Pluronic' can be removed at processing temperatures as low as 140 °C, thus aiding achievement of sufficient adhesion to the ITO-PET support, higher porosity of the TiO2 layer and decreased crack appearance. Further optimization of this method is particularly promising when combined with other known low-temperature methods.

Diameter Tuning of β-Ga2O3 Nanowires Using Chemical Vapor Deposition Technique.

PubMed

Kumar, Mukesh; Kumar, Vikram; Singh, R

2017-12-01

Diameter tuning of [Formula: see text]-Ga 2 O 3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga 2 O 3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 °C) as compared to lower growth temperature (800 °C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.

Superconductivity of lanthanum revisited

NASA Astrophysics Data System (ADS)

Loeptien, Peter; Zhou, Lihui; Wiebe, Jens; Khajetoorians, Alexander Ako; Wiesendanger, Roland

2014-03-01

The thickness dependence of the superconductivity in clean hexagonal lanthanum films grown on tungsten (110) is studied by means of scanning tunneling microscopy (STM) and spectroscopy (STS). Fitting of the measured spectra to BCS theory yields the superconducting energy gaps from which the critical temperatures are determined. For the case of thick, bulk-like films, the bulk energy gap and critical temperature of dhcp lanthanum turn out to be considerably higher as compared to values from the literature measured by other techniques. In thin films the superconductivity is quenched by the boundary condition for the superconducting wavefunction imposed by the substrate and surface, leading to a linear decrease of the superconducting transition temperature as a function of the inverse film thickness. This opens up the possibility to grow lanthanum films with defined superconducting properties.

High-temperature crystallized thin-film PZT on thin polyimide substrates

NASA Astrophysics Data System (ADS)

Liu, Tianning; Wallace, Margeaux; Trolier-McKinstry, Susan; Jackson, Thomas N.

2017-10-01

Flexible piezoelectric thin films on polymeric substrates provide advantages in sensing, actuating, and energy harvesting applications. However, direct deposition of many inorganic piezoelectric materials such as Pb(Zrx,Ti1-x)O3 (PZT) on polymers is challenging due to the high temperature required for crystallization. This paper describes a transfer process for PZT thin films. The PZT films are first grown on a high-temperature capable substrate such as platinum-coated silicon. After crystallization, a polymeric layer is added, and the polymer-PZT combination is removed from the high-temperature substrate by etching away a release layer, with the polymer layer then becoming the substrate. The released PZT on polyimide exhibits enhanced dielectric response due to reduction in substrate clamping after removal from the rigid substrate. For Pb(Zr0.52,Ti0.48)0.98Nb0.02O3 films, release from Si increased the remanent polarization from 17.5 μC/cm2 to 26 μC/cm2. In addition, poling led to increased ferroelastic/ferroelectric realignment in the released films. At 1 kHz, the average permittivity was measured to be around 1160 after release from Si with a loss tangent below 3%. Rayleigh measurements further confirmed the correlation between diminished substrate constraint and increased domain wall mobility in the released PZT films on polymers.

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Aerosol assisted chemical vapour deposition of gas sensitive SnO2 and Au-functionalised SnO2 nanorods via a non-catalysed vapour solid (VS) mechanism

PubMed Central

Vallejos, Stella; Selina, Soultana; Annanouch, Fatima Ezahra; Gràcia, Isabel; Llobet, Eduard; Blackman, Chris

2016-01-01

Tin oxide nanorods (NRs) are vapour synthesised at relatively lower temperatures than previously reported and without the need for substrate pre-treatment, via a vapour-solid mechanism enabled using an aerosol-assisted chemical vapour deposition method. Results demonstrate that the growth of SnO2 NRs is promoted by a compression of the nucleation rate parallel to the substrate and a decrease of the energy barrier for growth perpendicular to the substrate, which are controlled via the deposition conditions. This method provides both single-step formation of the SnO2 NRs and their integration with silicon micromachined platforms, but also allows for in-situ functionalization of the NRs with gold nanoparticles via co-deposition with a gold precursor. The functional properties are demonstrated for gas sensing, with microsensors using functionalised NRs demonstrating enhanced sensing properties towards H2 compared to those based on non-functionalised NRs. PMID:27334232

Characterization of hydroxyapatite whisker reinforced composites and scaffolds for mechanical and biological function in orthopaedic and spinal implants

NASA Astrophysics Data System (ADS)

Conrad, Timothy L.

The overall objective of this study was to investigate the mechanical and biological properties of HA whisker reinforced polyaryletherketone (PAEK) composites and scaffolds which are key to clinical translation for orthopedic and spinal implants. The fatigue behavior of polyetherketoneketone (PEKK) reinforced with 0, 20, and 40 vol% hydroxyapatite (HA) was investigated in four-point bending fatigue. The fatigue life decreased with increasing HA reinforcement. However, PEKK reinforced with 40 vol% HA whiskers exhibited a fatigue life greater than 2.106 cycles at 40 MPa. Moreover, HA whisker reinforcement resulted in decreased creep deformation and minimal modulus degradation. The effects of the mold temperature and polyetheretherketone (PEEK) powder were investigated on the mechanical properties and crystallinity of HA whisker reinforced PEEK scaffolds prepared using compression molding and porogen leaching. The mechanical properties of the scaffolds increased while the PEEK crystallinity decreased, with increasing mold temperature and suggested an optimal mold temperature of 370--375°C for PEEK scaffolds comprising of 75% porosity and 20 vol% HA whisker reinforcement, regardless of the PEEK powder size. The effects of the porogen morphology on the architecture, mechanical properties, and permeability of HA whisker reinforced PEEK scaffolds were investigated in 75--90% porous scaffolds. HA whisker reinforced PEEK scaffolds prepared with an ellipsoidal porogen exhibited a greater permeability than scaffolds prepared with a cubic porogen. The compressive modulus, yield strength, and yield strain were not affected by the porogen morphology. The effects of HA reinforcement morphology and content was investigated on the behavior of primary osteoblasts on dense HA reinforced PEEK substrates in vitro. At day 7, the number of osteoblasts attached to PEEK substrate surfaces increased with increasing HA content and for HA whiskers compared to equiaxed HA powder reinforcement. This suggests that the HA reinforcement content morphology can promote cellular attachment and proliferation at early time points.

Numerical and Experimental Approaches Toward Understanding Lava Flow Heat Transfer

NASA Astrophysics Data System (ADS)

Rumpf, M.; Fagents, S. A.; Hamilton, C.; Crawford, I. A.

2013-12-01

We have performed numerical modeling and experimental studies to quantify the heat transfer from a lava flow into an underlying particulate substrate. This project was initially motivated by a desire to understand the transfer of heat from a lava flow into the lunar regolith. Ancient regolith deposits that have been protected by a lava flow may contain ancient solar wind, solar flare, and galactic cosmic ray products that can give insight into the history of our solar system, provided the records were not heated and destroyed by the overlying lava flow. In addition, lava-substrate interaction is an important aspect of lava fluid dynamics that requires consideration in lava emplacement models Our numerical model determines the depth to which the heat pulse will penetrate beneath a lava flow into the underlying substrate. Rigorous treatment of the temperature dependence of lava and substrate thermal conductivity and specific heat capacity, density, and latent heat release are imperative to an accurate model. Experiments were conducted to verify the numerical model. Experimental containers with interior dimensions of 20 x 20 x 25 cm were constructed from 1 inch thick calcium silicate sheeting. For initial experiments, boxes were packed with lunar regolith simulant (GSC-1) to a depth of 15 cm with thermocouples embedded at regular intervals. Basalt collected at Kilauea Volcano, HI, was melted in a gas forge and poured directly onto the simulant. Initial lava temperatures ranged from ~1200 to 1300 °C. The system was allowed to cool while internal temperatures were monitored by a thermocouple array and external temperatures were monitored by a Forward Looking Infrared (FLIR) video camera. Numerical simulations of the experiments elucidate the details of lava latent heat release and constrain the temperature-dependence of the thermal conductivity of the particulate substrate. The temperature-dependence of thermal conductivity of particulate material is not well known, especially at high temperatures. It is important to have this property well constrained as substrate thermal conductivity is the greatest influence on the rate of lava-substrate heat transfer. At Kilauea and Mauna Loa Volcanoes, Hawaii, and other volcanoes that threaten communities, lava may erupt over a variety of substrate materials including cool lava flows, volcanic tephra, soils, sand, and concrete. The composition, moisture, organic content, porosity, and grain size of the substrate dictate the thermophysical properties, thus affecting the transfer of heat from the lava flow into the substrate and flow mobility. Particulate substrate materials act as insulators, subduing the rate of heat transfer from the flow core. Therefore, lava that flows over a particulate substrate will maintain higher core temperatures over a longer period, enhancing flow mobility and increasing the duration and aerial coverage of the resulting flow. Lava flow prediction models should include substrate specification with temperature dependent material property definitions for an accurate understanding of flow hazards.

Influence of GaAs substrate properties on the congruent evaporation temperature

NASA Astrophysics Data System (ADS)

Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

2018-03-01

High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

Preparation and characterization of epitaxial Fe{sub 2-x}Ti{sub x}O{sub 3} films with various Ti concentrations (0.5

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takada, Y.; Nakanishi, M.; Fujii, T.

2008-08-01

An ilmenite-hematite solid solution (Fe{sub 2-x}Ti{sub x}O{sub 3}) is one of the candidates for practical magnetic semiconductors with a high Curie temperature. We have prepared well-crystallized epitaxial Fe{sub 2-x}Ti{sub x}O{sub 3} films with a wide range of Ti concentrations--x=0.50, 0.60, 0.65, 0.76, 0.87, and 0.94--on {alpha}-Al{sub 2}O{sub 3}(001) substrates. The films are prepared by a reactive helicon plasma sputtering technique to evaporate Fe and TiO targets simultaneously under optimized oxygen pressure conditions. The structural characterizations of the films reveal that all films have a single phase of the ordered structure with R3 symmetry, where Ti-rich and Fe-rich layers are stackedmore » alternately along the c axis. All films have large ferrimagnetic moments at low temperature, and room temperature magnetization is clearly observed at x<0.7. The inverse temperature dependence of the resistivities of the films indicates their semiconducting behavior. The film resistivities decrease with decreasing Ti concentration.« less

Characterization of W-Ti-O thin films for application in photovoltaics

NASA Astrophysics Data System (ADS)

Christmas, Amanda P.

Photovoltaic (PV) devices consist of the conversion of light energy into electricity. Nearly all PV technologies employ transparent conducting oxides (TCO) as an integral part of the de-vice structure so that the light can reach the semiconductor. The predominant transparent conducting oxide (TCO) that is currently being used in industry is indium tin oxide (ITO). However, Indium (In) is high in cost and becoming scarce in the world. This work is focused towards Titanium doped Tungsten oxide (WO3) for TCO application. The ultimate goal is making novel, cheaper, and efficient TCOs based on W-Ti-O films. Titanium will enhance the conductivity of the film. In addition, Ti is more abundant than In thus leading to low-cost TCO. Ti-doped WO3 (W-Ti-O) films were grown by co-sputter deposition onto silicon, Si (100), and optical grade quartz wafers. Co-sputtering of Ti and W metal targets was per-formed in a wide growth temperature range (room temperature (RT)-500 °C). The Ti sputter-ing power varied from 50 watts-100 watts in order to gain an understanding of the Ti effect. The structure and optical properties were characterized by the X-ray diffraction (XRD), scan-ning electron microscopy (SEM) and the spectrophotometry measurements. The films are op-tically transparent and a correlation between the growth conditions and optical properties is derived. The XRD results show W-Ti-O films grown at RT are amorphous and the films crys-tallize at 200°C. A decrease in the peak intensity implies that the crystallinity decreases with an increase in titanium (Ti) along with a phase change at higher substrate growth tempera-tures. The optical results show the transparency of the films is well above 80%. The energy band gap decreases from 4.0 eV to 3.9 eV with an increase in substrate temperature and in-creases from 3.85 eV to 3.95 eV with an increase of Ti. These results meet the criteria of two essential TCO parameters.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

NASA Astrophysics Data System (ADS)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 μm wavelength

NASA Astrophysics Data System (ADS)

Besahraoui, Fatiha; Bouslama, M.'Hamed; Bouzaiene, Lotfi; Saidi, Faouzi; Maaref, Hassen; Gendry, Michel

2016-06-01

With the help of photoluminescence Spectroscopy (PLS), we have investigated the optoelectronic properties of two different families of InAs quantum dashes (QDashes) grown on misoriented InP(001) substrate with 2∘off miscut angle toward the [110] direction (2∘F type). The lowest full width at half maximum (FWHM) of the PL spectrum measured at 12 K indicates the good self organization of InAs QDashes. The weak ratio of the integrated PL measured in 12-300 K temperature range denotes the good spatial confinement of the photogenerated carriers in InAs QDashes. The fast redshift of the PL peaks energy and the anomalous decrease of the FWHM with the increase of the temperature are attributed to an efficient thermal relaxation process of photogenerated carriers in the vicinal sample. This result is highlighted with the help of theoretical modeling of the PL peak energy as a function of the temperature, using three models (Varshni, “Vina, Logothetidis and Cardona” and Pässler). From experimental and theoretical results, we have evidenced the contribution of longitudinal acoustic-phonons (LA-phonons) in the PL of InAs/InP QDashes, via the deformation potential, especially in high temperatures range. We have attributed this behavior to the strained InAs/InP QDashes and/or to the topography of the vicinal InP(001) substrate which favors the presence of stepped phonons polarized along the steps. These vibrational modes can further interact with the excitons at high temperatures. The measured thermal activation energies of each family of InAs QDashes demonstrate that the InAs wetting layer act as a barrier for the thermoionic emission of photogenerated carriers. This result confirms the good spatial confinement of excitons in this sample.

Self-Sorting of Bidispersed Colloidal Particles Near Contact Line of an Evaporating Sessile Droplet.

PubMed

Patil, Nagesh D; Bhardwaj, Rajneesh; Sharma, Atul

2018-06-13

Here, we investigate deposit patterns and associated morphology formed after the evaporation of an aqueous droplet containing mono- and bidispersed colloidal particles. In particular, the combined effect of substrate heating and particle diameter is investigated. We employ high-speed visualization, optical microscopy, and scanning electron microscopy to characterize the evaporating droplets, particle motion, and deposit morphology, respectively. In the context of monodispersed colloidal particles, an inner deposit and a typical ring form for smaller and larger particles, respectively, on a nonheated surface. The formation of the inner deposit is attributed to early depinning of the contact line, explained by a mechanistic model based on the balance of several forces acting on a particle near the contact line. At larger substrate temperature, a thin ring with inner deposit forms, explained by the self-pinning of the contact line and advection of the particles from the contact line to the center of the droplet due to the Marangoni flow. In the context of bidispersed colloidal particles, self-sorting of the colloidal particles within the ring occurs at larger substrate temperature. The smaller particles deposit at the outermost edge compared to the larger particles, and this preferential deposition in a stagnation region near the contact line is due to the spatially varying height of the liquid-gas interface above the substrate. The sorting occurs at a smaller ratio of the diameters of the smaller and larger particles. At larger substrate temperature and larger ratio, the particles do not get sorted and mix into each other. Our measurements show that there exists a critical substrate temperature as well as a diameter ratio to achieve the sorting. We propose regime maps on substrate temperature-particle diameter and substrate temperature-diameter ratio plane for mono- and bidispersed solutions, respectively.

Nutrient conservation during spent mushroom compost application using spent mushroom substrate derived biochar.

PubMed

Lou, Zimo; Sun, Yue; Bian, Shuping; Ali Baig, Shams; Hu, Baolan; Xu, Xinhua

2017-02-01

Spent mushroom compost (SMC), a spent mushroom substrate (SMS) derived compost, is always applied to agriculture land to enhance soil organic matter and nutrient contents. However, nitrogen, phosphate and organic matter contained in SMC can leach out and contaminate ground water during its application. In this study, biochars prepared under different pyrolytic temperatures (550 °C, 650 °C or 750 °C) from SMS were applied to soil as a nutrient conservation strategy. The resultant biochars were characterized for physical and mineralogical properties. Surface area and pore volume of biochars increased as temperature increased, while pore size decreased with increasing temperature. Calcite and quartz were evidenced by X-ray diffraction analysis in all biochars produced. Results of column leaching test suggested that mixed treatment of SMC and SMS-750-800 (prepared with the temperature for pyrolysis and activation was chosen as 750 °C and 800 °C, respectively) could reduce 43% of TN and 66% of COD Cr in leachate as compared to chemical fertilizers and SMC, respectively. Furthermore, increasing dosage of SMS-750-800 from 1% to 5% would lead to 54% COD Cr reduction in leachate, which confirmed its nutrient retention capability. Findings from this study suggested that combined application of SMC and SMS-based biochar was an applicable strategy for reducing TN and COD Cr leaching. Copyright © 2016 Elsevier Ltd. All rights reserved.

Tribological behavior of CrN-coated Cr-Mo-V steels used as die materials

NASA Astrophysics Data System (ADS)

Çelik, Gülşah Aktaş; Polat, Şeyda; Atapek, Ş. Hakan

2017-12-01

DIN 1.2343 and 1.2367 steels are commonly used as die materials in aluminum extrusion, and single/duplex/multi-coatings enhance their surface properties. The design of an appropriate substrate/coating system is important for improving the tribological performance of these steels under service conditions because the load-carrying capacity of the system can be increased by decreasing the plastic deformation of the substrate. In this study, the tribological behavior of CrN-coated Cr-Mo-V steels (DIN 1.2343, 1.2367, and 1.2999 grades) was investigated using different setups and tribological pairs at room and elevated temperatures. The aim of this study was to reveal the wear resistance of a suggested system (1.2999/CrN) not yet studied and to understand both the wear and the failure characteristics of coated systems. The results showed that (i) among the steels studied, the DIN 1.2999 grade steel exhibited the lowest friction coefficient because it had the highest load-carrying capacity as a result of secondary hardening at elevated temperatures; (ii) at room temperature, both abrasive tracks and adhesive layers were observed on the worn surfaces; and (iii) a combination of chemical reactions and progressive oxidation caused aluminum adhesion on the worn surface, and the detachment of droplets and microcracking were the characteristic damage mechanisms at high temperatures.

Temperature regulates methane production through the function centralization of microbial community in anaerobic digestion.

PubMed

Lin, Qiang; De Vrieze, Jo; He, Guihua; Li, Xiangzhen; Li, Jiabao

2016-09-01

Temperature is crucial for the performance of anaerobic digestion process. In this study of anaerobic digestion of swine manure, the relationship between the microbial gene expression and methane production at different temperatures (25-55°C) was revealed through metatranscriptomic analysis. Daily methane production and total biogas production increased with temperature up to 50°C, but decreased at 55°C. The functional gene expression showed great variation at different temperatures. The function centralization (opposite to alpha-diversity), assessed by the least proportions of functional pathways contributing for at least 50% of total reads positively correlated to methane production. Temperature regulated methane production probably through reducing the diversity of functional pathways, but enhancing central functional pathways, so that most of cellular activities and resource were invested in methanogenesis and related pathways, enhancing the efficiency of conversion of substrates to methane. This research demonstrated the importance of function centralization for efficient system functioning. Copyright © 2016 Elsevier Ltd. All rights reserved.

2G HTS wires made on 30 μm thick Hastelloy substrate

NASA Astrophysics Data System (ADS)

Sundaram, A.; Zhang, Y.; Knoll, A. R.; Abraimov, D.; Brownsey, P.; Kasahara, M.; Carota, G. M.; Nakasaki, R.; Cameron, J. B.; Schwab, G.; Hope, L. V.; Schmidt, R. M.; Kuraseko, H.; Fukushima, T.; Hazelton, D. W.

2016-10-01

REBCO (RE = rare earth) based high temperature superconducting (HTS) wires are now being utilized for the development of electric and electromagnetic devices for various industrial, scientific and medical applications. In the last several years, the increasing efforts in using the so-called second generation (2G) HTS wires for some of the applications require a further increase in their engineering current density (J e). The applications are those typically related to high magnetic fields where the higher J e of a REBCO wire, in addition to its higher irreversibility fields and higher mechanical strength, is already a major advantage over other superconducting wires. An effective way to increase the J e is to decrease the total thickness of a wire, for which using a thinner substrate becomes an obvious and attractive approach. By using our IBAD-MOCVD (ion beam assisted deposition-metal organic chemical vapor deposition) technology we have successfully made 2G HTS wires using a Hastelloy® C276 substrate that is only 30 μm in thickness. By using this thinner substrate instead of the typical 50 μm thick substrate and with a same critical current (I c), the J e of a wire can be increased by 30% to 45% depending on the copper stabilizer thickness. In this paper, we report the fabrication and characterization of the 2G HTS wires made on the 30 μm thick Hastelloy® C276 substrate. It was shown that with the optimization in the processing protocol, the surface of the thinner Hastelloy® C276 substrate can be readily electropolished to the quality needed for the deposition of the buffer stack. Same in the architecture as that on the standard 50 μm thick substrate, the buffer stack made on the 30 μm thick substrate showed an in-plane texture with a Δϕ of around 6.7° in the LaMnO3 cap layer. Low-temperature in-field transport measurement results suggest that the wires on the thinner substrate had achieved equivalent superconducting performance, most importantly the I c, as those on the 50 μm thick substrate. It is expected the 2G HTS wires made on the 30 μm thick Hastelloy® C276 substrate, the thinnest and with the highest J e to date, will greatly benefit such applications as high field magnets and high current cables.

Impacts of delayed addition of N-rich and acidic substrates on nitrogen loss and compost quality during pig manure composting.

PubMed

Jiang, Jishao; Kang, Kang; Chen, Dan; Liu, Ningning

2018-02-01

Delayed addition of Nitrogen (N)-rich and acidic substrates was investigated to evaluate its effects on N loss and compost quality during the composting process. Three different delayed adding methods of N-rich (pig manure) and acidic substrates (phosphate fertilizer and rotten apples) were tested during the pig manure and wheat straw is composting. The results showed that delayed addition of pig manure and acidic materials led two temperature peaks, and the durations of two separate thermophilic phase were closely related to the amount of pig manure. Delayed addition reduced total N loss by up to 14% when using superphosphate as acidic substrates, and by up to 12% when using rotten apples as acidic substrates, which is mainly due to the decreased NH 3 emissions. At the end of composting, delayed the addition of pig manure caused a significant increase in the HS (humus substance) content, and the highest HS content was observed when 70% of the pig manure was applied at day 0 and the remaining 30% was applied on day 27. In the final compost, the GI in all treatments almost reached the maturity requirement by exceeding 80%. The results suggest that delayed addition of animal manure and acidic substrates could prevent the N loss during composting and improve the compost quality. Copyright © 2017 Elsevier Ltd. All rights reserved.

Topography evolution of rough-surface metallic substrates by solution deposition planarization method

NASA Astrophysics Data System (ADS)

Chu, Jingyuan; Zhao, Yue; Liu, Linfei; Wu, Wei; Zhang, Zhiwei; Hong, Zhiyong; Li, Yijie; Jin, Zhijian

2018-01-01

As an emerging technique for surface smoothing, solution deposition planarization (SDP) has recently drawn more attention on the fabrication of the second generation high temperature superconducting (2G-HTS) tapes. In our work, a number of amorphous oxide layers were deposited on electro-polished or mirror-rolled metallic substrates by chemical solution route. Topography evolution of surface defects on these two types of metallic substrates was thoroughly investigated by atomic force microscopy (AFM). It was showed that root mean square roughness values (at 50 × 50 μm2 scanning scale) on both rough substrates reduced to ∼5 nm after coating with SDP-layer. The smoothing effect was mainly attributed to decrease of the depth at grain boundary grooving on the electro-polished metallic substrate. On the mirror-rolled metallic substrates, the amplitude and frequency of the height fluctuation perpendicular to the rolling direction were gradually reduced as depositing more numbers of SDP-layer. A high Jc value of 4.17 MA cm-2 (at 77 K, s.f.) was achieved on a full stack of YBCO/CeO2/IBAD-MgO/SDP-layer/C276 sample. This study enhanced understanding of the topography evolution on the surface defects covered by the SDP-layer, and demonstrated a low-cost route for fabricating IBAD-MgO based YBCO templates with a simplified architecture.

Influence of vapor deposition on structural and charge transport properties of ethylbenzene films

DOE PAGES

Antony, Lucas W.; Jackson, Nicholas E.; Lyubimov, Ivan; ...

2017-04-14

Organic glass films formed by physical vapor deposition exhibit enhanced stability relative to those formed by conventional liquid cooling and aging techniques. Recently, experimental and computational evidence has emerged indicating that the average molecular orientation can be tuned by controlling the substrate temperature at which these “stable glasses” are grown. In this work, we present a comprehensive all-atom simulation study of ethylbenzene, a canonical stable-glass former, using a computational film formation procedure that closely mimics the vapor deposition process. Atomistic studies of experimentally formed vapor-deposited glasses have not been performed before, and this study therefore begins by verifying that themore » model and method utilized here reproduces key structural features observed experimentally. Having established agreement between several simulated and experimental macroscopic observables, simulations are used to examine the substrate temperature dependence of molecular orientation. The results indicate that ethylbenzene glasses are anisotropic, depending upon substrate temperature, and that this dependence can be understood from the orientation present at the surface of the equilibrium liquid. By treating ethylbenzene as a simple model for molecular semiconducting materials, a quantum-chemical analysis is then used to show that the vapor-deposited glasses exhibit decreased energetic disorder and increased magnitude of the mean-squared transfer integral relative to isotropic, liquid-cooled films, an effect that is attributed to the anisotropic ordering of the molecular film. Finally, these results suggest a novel structure–function simulation strategy capable of tuning the electronic properties of organic semiconducting glasses prior to experimental deposition, which could have considerable potential for organic electronic materials design.« less

Influence of vapor deposition on structural and charge transport properties of ethylbenzene films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antony, Lucas W.; Jackson, Nicholas E.; Lyubimov, Ivan

Organic glass films formed by physical vapor deposition exhibit enhanced stability relative to those formed by conventional liquid cooling and aging techniques. Recently, experimental and computational evidence has emerged indicating that the average molecular orientation can be tuned by controlling the substrate temperature at which these “stable glasses” are grown. In this work, we present a comprehensive all-atom simulation study of ethylbenzene, a canonical stable-glass former, using a computational film formation procedure that closely mimics the vapor deposition process. Atomistic studies of experimentally formed vapor-deposited glasses have not been performed before, and this study therefore begins by verifying that themore » model and method utilized here reproduces key structural features observed experimentally. Having established agreement between several simulated and experimental macroscopic observables, simulations are used to examine the substrate temperature dependence of molecular orientation. The results indicate that ethylbenzene glasses are anisotropic, depending upon substrate temperature, and that this dependence can be understood from the orientation present at the surface of the equilibrium liquid. By treating ethylbenzene as a simple model for molecular semiconducting materials, a quantum-chemical analysis is then used to show that the vapor-deposited glasses exhibit decreased energetic disorder and increased magnitude of the mean-squared transfer integral relative to isotropic, liquid-cooled films, an effect that is attributed to the anisotropic ordering of the molecular film. Finally, these results suggest a novel structure–function simulation strategy capable of tuning the electronic properties of organic semiconducting glasses prior to experimental deposition, which could have considerable potential for organic electronic materials design.« less

Influence of Vapor Deposition on Structural and Charge Transport Properties of Ethylbenzene Films

PubMed Central

2017-01-01

Organic glass films formed by physical vapor deposition exhibit enhanced stability relative to those formed by conventional liquid cooling and aging techniques. Recently, experimental and computational evidence has emerged indicating that the average molecular orientation can be tuned by controlling the substrate temperature at which these “stable glasses” are grown. In this work, we present a comprehensive all-atom simulation study of ethylbenzene, a canonical stable-glass former, using a computational film formation procedure that closely mimics the vapor deposition process. Atomistic studies of experimentally formed vapor-deposited glasses have not been performed before, and this study therefore begins by verifying that the model and method utilized here reproduces key structural features observed experimentally. Having established agreement between several simulated and experimental macroscopic observables, simulations are used to examine the substrate temperature dependence of molecular orientation. The results indicate that ethylbenzene glasses are anisotropic, depending upon substrate temperature, and that this dependence can be understood from the orientation present at the surface of the equilibrium liquid. By treating ethylbenzene as a simple model for molecular semiconducting materials, a quantum-chemical analysis is then used to show that the vapor-deposited glasses exhibit decreased energetic disorder and increased magnitude of the mean-squared transfer integral relative to isotropic, liquid-cooled films, an effect that is attributed to the anisotropic ordering of the molecular film. These results suggest a novel structure–function simulation strategy capable of tuning the electronic properties of organic semiconducting glasses prior to experimental deposition, which could have considerable potential for organic electronic materials design. PMID:28573203

Selective Pressure of Temperature on Competition and Cross-Feeding within Denitrifying and Fermentative Microbial Communities

PubMed Central

Hanke, Anna; Berg, Jasmine; Hargesheimer, Theresa; Tegetmeyer, Halina E.; Sharp, Christine E.; Strous, Marc

2016-01-01

In coastal marine sediments, denitrification and fermentation are important processes in the anaerobic decomposition of organic matter. Microbial communities performing these two processes were enriched from tidal marine sediments in replicated, long term chemostat incubations at 10 and 25°C. Whereas denitrification rates at 25°C were more or less stable over time, at 10°C denitrification activity was unstable and could only be sustained either by repeatedly increasing the amount of carbon substrates provided or by repeatedly decreasing the dilution rate. Metagenomic and transcriptomic sequencing was performed at different time points and provisional whole genome sequences (WGS) and gene activities of abundant populations were compared across incubations. These analyses suggested that a temperature of 10°C selected for populations related to Vibrionales/Photobacterium that contributed to both fermentation (via pyruvate/formate lyase) and nitrous oxide reduction. At 25°C, denitrifying populations affiliated with Rhodobacteraceae were more abundant. The latter performed complete denitrification, and may have used carbon substrates produced by fermentative populations (cross-feeding). Overall, our results suggest that a mixture of competition—for substrates between fermentative and denitrifying populations, and for electrons between both pathways active within a single population –, and cross feeding—between fermentative and denitrifying populations—controlled the overall rate of denitrification. Temperature was shown to have a strong selective effect, not only on the populations performing either process, but also on the nature of their ecological interactions. Future research will show whether these results can be extrapolated to the natural environment. PMID:26779132

A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer

NASA Astrophysics Data System (ADS)

Li, Qi; Wen, Yi; Zhang, Fabi; Li, Haiou; Xiao, Gongli; Chen, Yonghe; Fu, Tao

2018-09-01

A novel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) structure has been proposed. The new structure features a substrate field plate (SFP) and a variable-k dielectric buried layer (VKBL). The SFP and VKBL improve the breakdown voltage by introducing new electric field peaks in the surface electric field distribution. Moreover, the SFP reduces the specific ON-resistance through an enhanced auxiliary depletion effect on the drift region. The simulation results indicate that compared to the conventional SOI LDMOS structure, the breakdown voltage is improved from 118 V to 221 V, the specific ON-resistance is decreased from 7.15 mΩ·cm2 to 3.81 mΩ·cm2, the peak value of surface temperature is declined by 38 K.

Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate.

PubMed

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Kim, Taek Sung; Shim, Kyu-Hwan; Hong, Hyobong; Choi, Chel-Jong

2015-10-01

We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

Post annealing effects on the electrical characteristics of pentacene thin film transistors on flexible substrates.

PubMed

Oh, Tae-Yeon; Jeong, Shin Woo; Chang, Seongpil; Park, Jung-Ho; Kim, Jong-Woo; Choi, Kookhyun; Ha, Hyeon-Jun; Hwang, Bo-Yeon; Ju, Byeong-Kwon

2013-05-01

This work studies the effect of post annealing of pentacene on a flexible substrate through the examination of electrical properties and surface morphologies. It is confirmed that the best performance of devices is achieved when the post annealing temperature is 60 degrees C, since the grain size increases, which decrease grain boundaries caused charge transport limit. We can also confirmed the large threshold voltage shift of device annealed at 60 degrees C that means the lower trap density between channel and insulator interface. The device annealed at 60 degrees C exhibits a saturation mobility of 1.99 cm2/V x s, an on/off ratio of 1.87 x 10(4), and a subthreshold slope of 2.5 V/decade.

Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

NASA Astrophysics Data System (ADS)

Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

Reactively sputtered thermochromic tungsten-doped VO2 films

NASA Astrophysics Data System (ADS)

Sobhan, M. A.; Kivaisi, R. T.; Stjerna, B. A.; Granqvist, Claes-Goeran

1994-09-01

Tungsten-doped vanadium oxide (V1-xWxO2) films were prepared by concurrent reactive dc magnetron sputtering of vanadium and tungsten in an Ar + O2 plasma with a controlled oxygen partial pressure. Films were deposited onto glass substrates at 400 degree(s)C. The films had a metal-semiconductor transition at a temperature (tau) t that was depressed when x was increased. Rutherford Back Scattering was used to determine x. X- ray diffraction was employed to confirm the monoclinic low-temperature VO2 phase. The relation between x and (tau) t was studied and compared with results from the literature. It was shown that (tau) t could be set to a value between 17 and 65 degree(s)C by proper choice of x. The optical and electrical properties of the films were investigated around the metal-semiconductor phase transition. The luminous transmittance was rather unaffected by the temperature, whereas the near infrared transmittance showed lower values above (tau) t. The degree of thermochromic modulation decreased for increased x. Electrical measurements showed that the ratio of the resistance above and below (tau) t decreased with increasing x.

Determination of Wetting Behavior, Spread Activation Energy, and Quench Severity of Bioquenchants

NASA Astrophysics Data System (ADS)

Prabhu, K. Narayan; Fernandes, Peter

2007-08-01

An investigation was conducted to study the suitability of vegetable oils such as sunflower, coconut, groundnut, castor, cashewnut shell (CNS), and palm oils as quench media (bioquenchants) for industrial heat treatment by assessing their wetting behavior and severity of quenching. The relaxation of contact angle was sharp during the initial stages, and it became gradual as the system approached equilibrium. The equilibrium contact angle decreased with increase in the temperature of the substrate and decrease in the viscosity of the quench medium. A comparison of the relaxation of the contact angle at various temperatures indicated the significant difference in spreading of oils having varying viscosity. The spread activation energy was determined using the Arrhenius type of equation. Oils with higher viscosity resulted in lower cooling rates. The quench severity of various oil media was determined by estimating heat-transfer coefficients using the lumped capacitance method. Activation energy for spreading determined using the wetting behavior of oils at various temperatures was in good agreement with the severity of quenching assessed by cooling curve analysis. A high quench severity is associated with oils having low spread activation energy.

Structural and optical properties of GaxIn1-xP layers grown by chemical beam epitaxy

NASA Astrophysics Data System (ADS)

Seong, Tae-Yeon; Yang, Jung-Ja; Ryu, Mee Yi; Song, Jong-In; Yu, Phil W.

1998-05-01

Chemical beam epitaxial (CBE) GaxIn1-xP layers (x≈0.5) grown on (001) GaAs substrates at temperatures ranging from 490 to 580°C have been investigated using transmission electron diffraction (TED), transmission electron microscopy, and photoluminescence (PL). TED examination revealed the presence of diffuse scattering 1/2{111}B positions, indicating the occurrence of typical CuPt-type ordering in the GaInP CBE layers. As the growth temperature decreased from 580 to 490°C, maxima in the intensity of the diffuse scattering moved from ½{111}B to ½{-1+δ,1-δ,0} positions, where δ is a positive value. As the growth temperature increased from 490 to 550°C, the maxima in the diffuse scattering intensity progressively approached positions of 1/2\\{bar 110\\} , i.e., the value of δ decreased from 0.25 to 0.17. Bandgap reduction (˜45 meV) was observed in the CBE GaInP layers and was attributed to the presence of ordered structures.

Colorless polyimide/organoclay nanocomposite substrates for flexible organic light-emitting devices.

PubMed

Kim, Jin-Hoe; Choi, Myeon-Chon; Kim, Hwajeong; Kim, Youngkyoo; Chang, Jin-Hae; Han, Mijeong; Kim, Il; Ha, Chang-Sik

2010-01-01

We report the preparation and application of indium tin oxide (ITO) coated fluorine-containing polyimide/organoclay nanocomposite substrate. Fluorine-containing polyimide/organoclay nanocomposite films were prepared through thermal imidization of poly(amic acid)/organoclay mixture films, whilst on which ITO thin films were coated on the films using a radio-frequency planar magnetron sputtering by varying the substrate temperature and the ITO thickness. Finally the ITO coated fluorine-containing polyimide/organoclay nanocomposite substrate was employed to make flexible organic light-emitting devices (OLED). Results showed that the lower sheet resistance was achieved when the substrate temperature was high and the ITO film was thick even though the optical transmittance was slightly lowered as the thickness increased. approximately 10 nm width ITO nanorods were found for all samples but the size of clusters with the nanorods was generally increased with the substrate temperature and the thickness. The flexible OLED made using the present substrate was quite stable even when the device was extremely bended.

Rapid thermal annealing of Amorphous Hydrogenated Carbon (a-C:H) films

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

1987-01-01

Amorphous hydrogenated carbon (a-C:H) films were deposited on silicon and quartz substrates by a 30 kHz plasma discharge technique using methane. Rapid thermal processing of the films was accomplished in nitrogen gas using tungsten halogen light. The rapid thermal processing was done at several fixed temperatures (up to 600 C), as a function of time (up to 1800 sec). The films were characterized by optical absorption and by ellipsometry in the near UV and the visible. The bandgap, estimated from extrapolation of the linear part of a Tauc plot, decreases both with the annealing temperature and the annealing time, with the temperature dependence being the dominating factor. The density of states parameter increases up to 25 percent and the refractive index changes up to 20 percent with temperature increase. Possible explanations of the mechanisms involved in these processes are discussed.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Characterization of LaF 3 coatings prepared at different temperatures and rates

NASA Astrophysics Data System (ADS)

Yu, Hua; Shen, Yanming; Cui, Yun; Qi, Hongji; Shao, JianDa; Fan, ZhengXiu

2008-01-01

LaF 3 thin films were prepared by thermal boat evaporation at different substrate temperatures and various deposition rates. X-ray diffraction (XRD), Lambda 900 spectrophotometer and X-ray photoelectron spectroscopy (XPS) were employed to study crystal structure, transmittance and chemical composition of the coatings, respectively. Laser-induce damage threshold (LIDT) was determined by a tripled Nd:YAG laser system with a pulse width of 8 ns. It is found that the crystal structure became more perfect and the refractive index increased gradually with the temperature rising. The LIDT was comparatively high at high temperature. In the other hand, the crystallization status also became better and the refractive index increased when the deposition rate enhanced at a low level. If the rate was super rapid, the crystallization worsened instead and the refractive index would lessen greatly. On the whole, the LIDT decreased with increasing rate.

The Role of Microbial Community Composition in Controlling Soil Respiration Responses to Temperature

PubMed Central

Khachane, Amit; Dungait, Jennifer A. J.; Fraser, Fiona; Hopkins, David W.; Wookey, Philip A.; Singh, Brajesh K.; Freitag, Thomas E.; Hartley, Iain P.; Prosser, James I.

2016-01-01

Rising global temperatures may increase the rates of soil organic matter decomposition by heterotrophic microorganisms, potentially accelerating climate change further by releasing additional carbon dioxide (CO2) to the atmosphere. However, the possibility that microbial community responses to prolonged warming may modify the temperature sensitivity of soil respiration creates large uncertainty in the strength of this positive feedback. Both compensatory responses (decreasing temperature sensitivity of soil respiration in the long-term) and enhancing responses (increasing temperature sensitivity) have been reported, but the mechanisms underlying these responses are poorly understood. In this study, microbial biomass, community structure and the activities of dehydrogenase and β-glucosidase enzymes were determined for 18 soils that had previously demonstrated either no response or varying magnitude of enhancing or compensatory responses of temperature sensitivity of heterotrophic microbial respiration to prolonged cooling. The soil cooling approach, in contrast to warming experiments, discriminates between microbial community responses and the consequences of substrate depletion, by minimising changes in substrate availability. The initial microbial community composition, determined by molecular analysis of soils showing contrasting respiration responses to cooling, provided evidence that the magnitude of enhancing responses was partly related to microbial community composition. There was also evidence that higher relative abundance of saprophytic Basidiomycota may explain the compensatory response observed in one soil, but neither microbial biomass nor enzymatic capacity were significantly affected by cooling. Our findings emphasise the key importance of soil microbial community responses for feedbacks to global change, but also highlight important areas where our understanding remains limited. PMID:27798702

Fabrication of Heterojunction Diode Based on n-ZnO Nanowires/p-Si Substrate: Temperature Dependent Transport Characteristics.

PubMed

Badran, R I; Umar, Ahmad

2017-01-01

Herein, we report the growth and characterizations of well-crystalline n-ZnO nanowires assembled in micro flower-shaped morphologies. The nanowires are grown on p-Silicon substrate and characterized in terms of their structural, morphological and electrical properties. Temperature dependent transport characteristics of the fabricated n-ZnO/p-Si heterojunction diode were examined. The morphological studies revealed that the nanowires are grown in high-density and arrange in special micro flower shaped morphology. The structural characterizations confirmed that the nanowires are well-crystalline and possessing wurtzite hexagonal phase. The electrical properties were evaluated by examining the I–V characteristics of the fabricated n-ZnO/p-Si heterojunction diode. The I–V characteristics were studied at temperature <300 K and ≥300 K in the forward and reverse bias conditions. The detailed temperature dependent electrical properties revealed that the fabricated heterojunction assembly shows a diode-like behavior with a turn-on voltage of 5 V at almost all temperatures and the delivered current changes between ˜1 to ˜5 μA when temperature changes from 77 K to 425 K. The rectifying behavior of the fabricated heterojunction diode, at 5 V, was demonstrated by rectifying ratio of ˜4 at 77 K which decreases to ˜1.5 at 425 K. This analysis also showed that the mean potential barrier of the fabricated heterojunction (˜1.2 eV) is larger than the energy difference (0.72 eV) of the work functions between Si and ZnO.

The Role of Microbial Community Composition in Controlling Soil Respiration Responses to Temperature.

PubMed

Auffret, Marc D; Karhu, Kristiina; Khachane, Amit; Dungait, Jennifer A J; Fraser, Fiona; Hopkins, David W; Wookey, Philip A; Singh, Brajesh K; Freitag, Thomas E; Hartley, Iain P; Prosser, James I

2016-01-01

Rising global temperatures may increase the rates of soil organic matter decomposition by heterotrophic microorganisms, potentially accelerating climate change further by releasing additional carbon dioxide (CO2) to the atmosphere. However, the possibility that microbial community responses to prolonged warming may modify the temperature sensitivity of soil respiration creates large uncertainty in the strength of this positive feedback. Both compensatory responses (decreasing temperature sensitivity of soil respiration in the long-term) and enhancing responses (increasing temperature sensitivity) have been reported, but the mechanisms underlying these responses are poorly understood. In this study, microbial biomass, community structure and the activities of dehydrogenase and β-glucosidase enzymes were determined for 18 soils that had previously demonstrated either no response or varying magnitude of enhancing or compensatory responses of temperature sensitivity of heterotrophic microbial respiration to prolonged cooling. The soil cooling approach, in contrast to warming experiments, discriminates between microbial community responses and the consequences of substrate depletion, by minimising changes in substrate availability. The initial microbial community composition, determined by molecular analysis of soils showing contrasting respiration responses to cooling, provided evidence that the magnitude of enhancing responses was partly related to microbial community composition. There was also evidence that higher relative abundance of saprophytic Basidiomycota may explain the compensatory response observed in one soil, but neither microbial biomass nor enzymatic capacity were significantly affected by cooling. Our findings emphasise the key importance of soil microbial community responses for feedbacks to global change, but also highlight important areas where our understanding remains limited.

Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique

NASA Technical Reports Server (NTRS)

Warner, Joseph D.; Bhasin, Kul B.; Miranda, Felix A.

1991-01-01

Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Preparation of CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films on Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamamoto, Yukio; Yamaguchi, Toshiyuki; Suzuki, Masayoshi

For fabricating efficient tandem solar cells, CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films have been prepared on Si(100), Si(110) and Si(111) substrates in the temperature range (R.T.{approximately}400 C) by rf sputtering. From EPMA analysis, these sputtered thin films are found to be nearly stoichiometric over the whole substrate temperature range, irrespective of the azimuth plane of the Si substrate. XPS studies showed that the compositional depth profile in these thin films is uniform. X-ray diffraction analysis indicated that all the thin films had a chalcopyrite structure. CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films were strongly oriented along the (112) plane with increasingmore » the substrate temperature, independent of the azimuth plane of the Si substrate, suggesting the larger grain growth.« less

Piezoelectric substrate effect on electron-acoustic phonon scattering in bilayer graphene

NASA Astrophysics Data System (ADS)

Ansari, Mohd Meenhaz; Ashraf, SSZ

2018-05-01

We have studied the effect of piezoelectric scattering as a function of electron temperature and distance between the sample and the substrate on electron-acoustic phonon scattering rate in Bilayer Graphene sitting on a piezoelectric substrate. We obtain approximate analytical result by neglecting the chiral nature of carriers and then proceed to obtain unapproximated numerical results for the scattering rate incorporating chirality of charge carriers. We find that on the incorporation of full numerical computation the magnitude as well as the power exponent both is affected with the power exponent changed from T3 to T3.31 in the low temperature range and to T6.98 dependence in the temperature range (>5K). We also find that the distance between the sample and substrate begins to strongly affect the scattering rate at temperatures above 10K. These calculation not only suggest the influencing effect of piezoelectric substrate on the transport properties of Dirac Fermions at very low temperatures but also open a channel to study low dimension structures by probing piezoelectric acoustical phonons.

Prenucleation Induced by Crystalline Substrates

NASA Astrophysics Data System (ADS)

Men, H.; Fan, Z.

2018-04-01

Prenucleation refers to the phenomenon of atomic ordering in the liquid adjacent to the substrate/liquid interface at temperatures above the liquidus. In this paper, we have systematically investigated and holistically quantified the prenucleation phenomenon as a function of temperature and the lattice misfit between the substrate and the solid, using molecular dynamics (MD) simulations. Our results have confirmed that at temperatures above the liquidus, the atoms in the liquid at the interface may exhibit pronounced atomic ordering, manifested by atomic layering normal to the interface, in-plane atomic ordering parallel to the interface, and the formation of a 2-dimensional (2D) ordered structure (a few atomic layers in thickness) on the substrate surface. Holistic quantification of such atomic ordering at the interface has revealed that the atomic layering is independent of lattice misfit and is only slightly enhanced by reducing temperature while both in-plane atomic ordering and the formation of the 2D ordered structure are significantly enhanced by reducing the lattice misfit and/or temperature. This substrate-induced atomic ordering in the liquid may have a significant influence on the subsequent heterogeneous nucleation process.

Co-composting of palm oil mill sludge-sawdust.

PubMed

Yaser, Abu Zahrim; Abd Rahman, Rakmi; Kalil, Mohd Sahaid

2007-12-15

Composting of Palm Oil Mill Sludge (POMS) with sawdust was conducted in natural aerated reactor. Composting using natural aerated reactor is cheap and simple. The goal of this study is to observe the potential of composting process and utilizing compost as media for growing Cymbopogun citratus, one of Malaysia herbal plant. The highest maximum temperature achieved is about 40 degrees C and to increase temperature bed, more biodegradable substrate needs to be added. The pH value decrease along the process with final pH compost is acidic (pH 5.7). The highest maximum organic losses are about 50% with final C/N ratio of the compost is about 19. Final compost also showed some fertilizing value but need to be adjusted to obtain an ideal substrate. Addition of about 70% sandy soil causes highest yield and excellent root development for C. citratus in potted media. Beside that, compost from POMS-sawdust also found to have fertilizer value and easy to handle. Composting of POMS with sawdust shows potential as an alternative treatment to dispose and recycle waste components.

Influence of heat treatment temperature on the morphological and structural aspects of reticulated vitreous carbon used in polyaniline electrosynthesis

NASA Astrophysics Data System (ADS)

Gonçalves, E. S.; Dalmolin, C.; Biaggio, S. R.; Nascente, P. A. P.; Rezende, M. C.; Ferreira, N. G.

2007-08-01

Reticulated vitreous carbon (RVC) was obtained from different heat treatment temperature (HTT), in the range from 700 up to 2000 °C, and used as a substrate for polyaniline growth from electrosynthesis. The influence of HTT on RVC chemical surface was studied by X-ray photoelectron spectroscopy (XPS) and correlated to electrochemical parameters used in the electrosynthesis. XPS analyses have shown that RVC heteroatoms decrease as HTT increases. The results reveal the migration of chemical bonds from oxidized carbon forms towards carbon atoms as the unique final product. Cyclic voltammetry, electrochemical impedance spectroscopy, and stability test of polyaniline films were performed from oxidized and non-oxidized RVC substrates. Cyclic voltammetry in 0.5 mol L -1 H 2SO 4 revealed higher capacitance for the RVC treated at 1000 °C and oxidized in a hot H 2SO 4 solution. The charge accumulation after RVC chemical treatment has increased around ten times. The lowest electric resistivities and impedances were obtained for the RVC treated at 2000 °C, which also showed the highest polyaniline stability.

Lipase immobilized on the hydrophobic polytetrafluoroethene membrane with nonwoven fabric and its application in intensifying synthesis of butyl oleate.

PubMed

Wang, Shu-Guang; Zhang, Wei-Dong; Li, Zheng; Ren, Zhong-Qi; Liu, Hong-Xia

2010-11-01

The synthesis of butyl oleate was studied in this paper with immobilized lipase. Five types of membrane were used as support to immobilize Rhizopus arrhizus lipase by following a procedure combining filtration and protein cross-linking. Results showed that hydrophobic polytetrafluoroethene membrane with nonwoven fabric (HO-PTFE-NF) was the favorite choice in terms of higher protein loading, activity, and specific activity of immobilized lipase. The factors including solvent polarity, lipase dosage, concentration, and molar ratio of substrate and temperature were found to have significant influence on conversion. Results showed that hexane (logP = 3.53) was a favorable solvent for the biosynthesis of butyl oleate in our studies. The optimal conditions were experimentally determined of 50 U immobilized lipase, molar ratio of oleic acid to butanol of 1.0, substrate concentration of 0.12 mol/L, temperature of 37 °C, and reaction time of 2 h. The conversion was beyond 91% and decreased slightly after 18 cycles. Lipase immobilization can improve the conversion and the repeated use of immobilized lipase relative to free lipase.

Process for producing large grain cadmium telluride

DOEpatents

Hasoon, F.S.; Nelson, A.J.

1996-01-16

A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

Method for materials deposition by ablation transfer processing

DOEpatents

Weiner, Kurt H.

1996-01-01

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs.

Methods for determining enzymatic activity comprising heating and agitation of closed volumes

DOEpatents

Thompson, David Neil; Henriksen, Emily DeCrescenzo; Reed, David William; Jensen, Jill Renee

2016-03-15

Methods for determining thermophilic enzymatic activity include heating a substrate solution in a plurality of closed volumes to a predetermined reaction temperature. Without opening the closed volumes, at least one enzyme is added, substantially simultaneously, to the closed volumes. At the predetermined reaction temperature, the closed volumes are agitated and then the activity of the at least one enzyme is determined. The methods are conducive for characterizing enzymes of high-temperature reactions, with insoluble substrates, with substrates and enzymes that do not readily intermix, and with low volumes of substrate and enzyme. Systems for characterizing the enzymes are also disclosed.

Modeling the Spray Forming of H13 Steel Tooling

NASA Astrophysics Data System (ADS)

Lin, Yaojun; McHugh, Kevin M.; Zhou, Yizhang; Lavernia, Enrique J.

2007-07-01

On the basis of a numerical model, the temperature and liquid fraction of spray-formed H13 tool steel are calculated as a function of time. Results show that a preheated substrate at the appropriate temperature can lead to very low porosity by increasing the liquid fraction in the deposited steel. The calculated cooling rate can lead to a microstructure consisting of martensite, lower bainite, retained austenite, and proeutectoid carbides in as-spray-formed material. In the temperature range between the solidus and liquidus temperatures, the calculated temperature of the spray-formed material increases with increasing substrate preheat temperature, resulting in a very low porosity by increasing the liquid fraction of the deposited steel. In the temperature region where austenite decomposition occurs, the substrate preheat temperature has a negligible influence on the cooling rate of the spray-formed material. On the basis of the calculated results, it is possible to generate sufficient liquid fraction during spray forming by using a high growth rate of the deposit without preheating the substrate, and the growth rate of the deposit has almost no influence on the cooling rate in the temperature region of austenite decomposition.

Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt

NASA Astrophysics Data System (ADS)

Chen, Cong; Ning, Ting-Yin; Wang, Can; Zhou, Yue-Liang; Zhang, Dong-Xiang; Wang, Pei; Ming, Hai; Yang, Guo-Zhen

2011-08-01

CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO-covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow . A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.

Nucleation time of nanoscale water bridges.

PubMed

Szoszkiewicz, Robert; Riedo, Elisa

2005-09-23

Water capillaries bind together grains of sand. They also can bind an atomic force microscope tip to a substrate. The kinetics of capillary condensation at the nanoscale is studied here using friction force microscopy. At 40% relative humidity we find that the meniscus nucleation times increase from 0.7 to 4.2 ms when the temperature decreases from 332 to 299 K. The nucleation times grow exponentially with the inverse temperature 1/T obeying an Arrhenius law. We obtain a nucleation energy barrier of 7.8 x 10(-20) J and an attempt frequency ranging between 4 and 250 GHz, in excellent agreement with theoretical predictions. These results provide direct experimental evidence that capillary condensation is a thermally activated phenomenon.

Tuning the Curie temperature of FeCo compounds by tetragonal distortion

NASA Astrophysics Data System (ADS)

Jakobsson, A.; Şaşıoǧlu, E.; Mavropoulos, Ph.; Ležaić, M.; Sanyal, B.; Bihlmayer, G.; Blügel, S.

2013-09-01

Combining density-functional theory calculations with a classical Monte Carlo method, we show that for B2-type FeCo compounds, tetragonal distortion gives rise to a strong reduction of the Curie temperature TC. The TC monotonically decreases from 1575 K (for c /a=1) to 940 K (for c /a=√2 ). We find that the nearest neighbor Fe-Co exchange interaction is sufficient to explain the c/a behavior of the TC. Combination of high magnetocrystalline anisotropy energy with a moderate TC value suggests tetragonal FeCo grown on the Rh substrate with c /a=1.24 to be a promising material for heat-assisted magnetic recording applications.

Transport properties of bilayer graphene due to charged impurity scattering: Temperature-dependent screening and substrate effects

NASA Astrophysics Data System (ADS)

Linh, Dang Khanh; Khanh, Nguyen Quoc

2018-03-01

We calculate the zero-temperature conductivity of bilayer graphene (BLG) impacted by Coulomb impurity scattering using four different screening models: unscreened, Thomas-Fermi (TF), overscreened and random phase approximation (RPA). We also calculate the conductivity and thermal conductance of BLG using TF, zero- and finite-temperature RPA screening functions. We find large differences between the results of the models and show that TF and finite-temperature RPA give similar results for diffusion thermopower Sd. Using the finite-temperature RPA, we calculate temperature and density dependence of Sd in BLG on SiO2, HfO2 substrates and suspended BLG for different values of interlayer distance c and distance between the first layer and the substrate d.

Structural and magnetic properties of Ni nanofilms on Ge(001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bocirnea, Amelia Elena; Costescu, Ruxandra Maria; Pasuk, Iuliana; Lungu, George Adrian; Teodorescu, Cristian Mihail

2017-12-01

Ni films of 20 nm nominal thickness were grown on Ge(001) substrates by molecular beam epitaxy at several different temperatures from room temperature up to 400 °C. X-ray diffraction and X-ray photoelectron spectroscopy reveal the nucleation of Ni-Ge compounds (NiGe, Ni2Ge, Ni5Ge2) as well as a departure from the fcc Ni structure exhibited by the films at and beyond a temperature of 100 °C. The binding energy of the Ni 2p peak increases from the RT value (852.7 eV) by 0.5-1.1 eV for the Ni/Ge(001) samples, while the Ge 2p binding energy changes by 0.6-0.7 eV after Ni growth compared to a clean Ge(001) substrate (there is only a ±0.15 eV shift among the samples grown on substrates at higher temperatures). By increasing substrate temperature, we obtained higher intermixing of Ni and Ge, but rather than both Ni and Ge interdiffusing, we find that Ni diffuses further into the germanium with higher substrate temperature, forming increasingly Ni-rich Ni-Ge compounds diluted into the Ge matrix. Based on Magneto-optic Kerr Effect measurements, Ni/Ge(001) grown on substrates at 100 and 200 °C does not exhibit a hysteresis loop, while the samples on 300 and 400 °C substrates show magnetic behavior, which we attribute to the magnetic character of hexagonal Ni5Ge2 (which is determined here for the first time to be a ferromagnetic phase).

Growth and characterization of V2O5 nanorods deposited by spray pyrolysis at low temperatures

NASA Astrophysics Data System (ADS)

Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai.; Mohammad, Sabah M.; Bououdina, M.

2016-07-01

Vanadium pentoxide (V2O5) nanorods were deposited by spray pyrolysis on preheated glass substrates at low temperatures. The influence of substrate temperature on the crystallization of V2O5 has been investigated. X-ray diffraction analysis (XRD) revealed that the films deposited at Tsub = 300°C were orthorhombic structures with preferential along (001) direction. Formation of nanorods from substrate surface which led to the formation of films with small-sized and rod-shaped nanostructure is observed by field scanning electron microscopy. Optical transmittance in the visible range increases to reach a maximum value of about 80% for a substrate temperature of 350°C. PL spectra reveal one main broad peak centered around 540 nm with high intensity.

Activation energy for diamond growth from the carbon-hydrogen gas system at low substrate temperatures

NASA Astrophysics Data System (ADS)

Stiegler, J.; Lang, T.; von Kaenel, Y.; Michler, J.; Blank, E.

1997-01-01

The growth kinetics of diamond films deposited at low substrate temperatures (600-400 °C) from the carbon-hydrogen gas system have been studied. When the substrate temperature alone was varied, independently of all other process parameters in the microwave plasma reactor, an activation energy in the order of 7 kcal/mol was observed. This value did not change with different carbon concentrations in hydrogen. It is supposed that growth kinetics in this temperature range are controlled by a single chemical reaction, probably the abstraction of surface bonded hydrogen by gas phase atomic hydrogen.

Transport, motility, biofilm forming potential and survival of Bacillus subtilis exposed to cold temperature and freeze-thaw.

PubMed

Asadishad, Bahareh; Olsson, Adam L J; Dusane, Devendra H; Ghoshal, Subhasis; Tufenkji, Nathalie

2014-07-01

In cold climate regions, microorganisms in upper layers of soil are subject to low temperatures and repeated freeze-thaw (FT) conditions during the winter. We studied the effects of cold temperature and FT cycles on the viability and survival strategies (namely motility and biofilm formation) of the common soil bacterium and model pathogen Bacillus subtilis. We also examined the effect of FT on the transport behavior of B. subtilis at two solution ionic strengths (IS: 10 and 100 mM) in quartz sand packed columns. Finally, to study the mechanical properties of the bacteria-surface bond, a quartz crystal microbalance with dissipation monitoring (QCM-D) was used to monitor changes in bond stiffness when B. subtilis attached to a quartz substrate (model sand surface) under different environmental conditions. We observed that increasing the number of FT cycles decreased bacterial viability and that B. subtilis survived for longer time periods in higher IS solution. FT treatment decreased bacterial swimming motility and the transcription of flagellin encoding genes. Although FT exposure had no significant effect on the bacterial growth rate, it substantially decreased B. subtilis biofilm formation and correspondingly decreased the transcription of matrix production genes in higher IS solution. As demonstrated with QCM-D, the bond stiffness between B. subtilis and the quartz surface decreased after FT. Moreover, column transport studies showed higher bacterial retention onto sand grains after exposure to FT. This investigation demonstrates how temperature variations around the freezing point in upper layers of soil can influence key bacterial properties and behavior, including survival and subsequent transport. Copyright © 2014 Elsevier Ltd. All rights reserved.

Shallow snowpack inhibits soil respiration in sagebrush steppe through multiple biotic and abiotic mechanisms

DOE PAGES

Tucker, Colin L.; Tamang, Shanker; Pendall, Elise; ...

2016-05-01

In sagebrush steppe, snowpack may govern soil respiration through its effect on multiple abiotic and biotic factors. Across the Intermountain West of the United States, snowpack has been declining for decades and is projected to decline further over the next century, making the response of soil respiration to snowpack a potentially important factor in the ecosystem carbon cycle. In this study, we evaluated the direct and indirect roles of the snowpack in driving soil respiration in sagebrush steppe ecosystems by taking advantage of highway snowfences in Wyoming to manipulate snowpack. An important contribution of this study is the use ofmore » Bayesian modeling to quantify the effects of soil moisture and temperature on soil respiration across a wide range of conditions from frozen to hot and dry, while simultaneously accounting for biotic factors (e.g., vegetation cover, root density, and microbial biomass and substrate-use diversity) affected by snowpack. Elevated snow depth increased soil temperature (in the winter) and moisture (winter and spring), and was associated with reduced vegetation cover and microbial biomass carbon. Soil respiration showed an exponential increase with temperature, with a temperature sensitivity that decreased with increasing seasonal temperature (Q 10 = 4.3 [winter], 2.3 [spring], and 1.7 [summer]); frozen soils were associated with unrealistic Q 10 approximate to 7989 due to the liquid-to-ice transition of soil water. Soil respiration was sensitive to soil water content; predicted respiration under very dry conditions was less than 10% of respiration under moist conditions. While higher vegetation cover increased soil respiration, this was not due to increased root density, and may reflect differences in litter inputs. Microbial substrate-use diversity was negatively related to reference respiration (i.e., respiration rate at a reference temperature and optimal soil moisture), although the mechanism remains unclear. Lastly, this study indicates that soil respiration is inhibited by shallow snowpack through multiple mechanisms; thus, future decreases in snowpack across the sagebrush steppe have the potential to reduce losses of soil C, potentially affecting regional carbon balance.« less

Shallow snowpack inhibits soil respiration in sagebrush steppe through multiple biotic and abiotic mechanisms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tucker, Colin L.; Tamang, Shanker; Pendall, Elise

In sagebrush steppe, snowpack may govern soil respiration through its effect on multiple abiotic and biotic factors. Across the Intermountain West of the United States, snowpack has been declining for decades and is projected to decline further over the next century, making the response of soil respiration to snowpack a potentially important factor in the ecosystem carbon cycle. In this study, we evaluated the direct and indirect roles of the snowpack in driving soil respiration in sagebrush steppe ecosystems by taking advantage of highway snowfences in Wyoming to manipulate snowpack. An important contribution of this study is the use ofmore » Bayesian modeling to quantify the effects of soil moisture and temperature on soil respiration across a wide range of conditions from frozen to hot and dry, while simultaneously accounting for biotic factors (e.g., vegetation cover, root density, and microbial biomass and substrate-use diversity) affected by snowpack. Elevated snow depth increased soil temperature (in the winter) and moisture (winter and spring), and was associated with reduced vegetation cover and microbial biomass carbon. Soil respiration showed an exponential increase with temperature, with a temperature sensitivity that decreased with increasing seasonal temperature (Q 10 = 4.3 [winter], 2.3 [spring], and 1.7 [summer]); frozen soils were associated with unrealistic Q 10 approximate to 7989 due to the liquid-to-ice transition of soil water. Soil respiration was sensitive to soil water content; predicted respiration under very dry conditions was less than 10% of respiration under moist conditions. While higher vegetation cover increased soil respiration, this was not due to increased root density, and may reflect differences in litter inputs. Microbial substrate-use diversity was negatively related to reference respiration (i.e., respiration rate at a reference temperature and optimal soil moisture), although the mechanism remains unclear. Lastly, this study indicates that soil respiration is inhibited by shallow snowpack through multiple mechanisms; thus, future decreases in snowpack across the sagebrush steppe have the potential to reduce losses of soil C, potentially affecting regional carbon balance.« less

Method for formation of thin film transistors on plastic substrates

DOEpatents

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Surface Treatment of Plastic Substrates using Atomic Hydrogen Generated on Heated Tungsten Wire at Low Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Matsuo, Naoto

2007-06-01

The surface properties of a plastic substrate were changed by a novel surface treatment called atomic hydrogen annealing (AHA). In this method, a plastic substrate was exposed to atomic hydrogen generated by cracking hydrogen molecules on heated tungsten wire. For the substrate, surface roughness was increased and halogen elements (F and Cl) were selectively etched by AHA. AHA was useful for pretreatment before film deposition on a plastic substrate because the changes in surface state relate to adhesion improvement. It is concluded that this method is a promising technique for preparing high-performance plastic substrates at low temperatures.

Textured substrate tape and devices thereof

DOEpatents

Goyal, Amit

2006-08-08

A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer.

Effect of γ-irradiation on the temperature coefficient of surface resistivity of two-dimensional island platinum films

NASA Astrophysics Data System (ADS)

Bishay, A. G.; El-Gamal, S.

2011-05-01

Three sets (A, B and C) of two-dimensional island platinum films (2D-I(Pt)Fs) were prepared via the thermal evaporation technique, where the substrates are corning 7059 glass slides. The mass thickness ( d m) of the films of different sets is 5, 10 and 20 Å, respectively. The Pt films were exposed to γ-rays from 137Cs (0.662 MeV) radiation source of dose rate 0.5 Gy/min. and the different doses are 100, 200, 300, 500 and 700 Gy. The dependence of the surface resistivity ( ρ) on temperature over the range of 100-300 K was undertaken at different d m and doses then the temperature coefficient of surface resistivity ( α) was deduced. It was found that; (i) for particular d m and T, the absolute value of α decreases as the dose increases (ii) for particular dose and T, the absolute value of α decreases as d m increases (iii) for particular dose and d m, the absolute value of α decreases as T increases. Qualitative interpretation for the results was offered on the ground that the electrons transfer among islands takes place by the activated tunneling mechanism and the γ-irradiation has changed the shape of islands from spherical to prolate spheroid.

Glasses and Liquids Low on the Energy Landscape Prepared by Physical Vapor Deposition

NASA Astrophysics Data System (ADS)

Dalal, Shakeel; Fakhraai, Zahra; Ediger, Mark

2014-03-01

The lower portions of the potential energy landscape for glass-forming materials such as polymers and small molecules were historically inaccessible by experiments. Physical vapor deposition is uniquely able to prepare materials in this portion of the energy landscape, with the properties of the deposited material primarily modulated by the substrate temperature. Here we report on high-throughput experiments which utilize a temperature gradient stage to enable rapid screening of vapor-deposited organic glasses. Using ellipsometry, we characterize a 100 K range of substrate temperatures in a single experiment, allowing us to rapidly determine the density, kinetic stability, fictive temperature and molecular orientation of these glasses. Their properties fall into three temperature regimes. At substrate temperatures as low as 0.97Tg, we prepare materials which are equivalent to the supercooled liquid produced by cooling the melt. Below 0.9Tg (1.16TK) the properties of materials are kinetically controlled and highly tunable. At intermediate substrate temperatures we are able to produce materials whose bulk properties match those expected for the equilibrium supercooled liquid, down to 1.16TK, but are structurally anisotropic.

Fabrication of a novel aluminum surface covered by numerous high-aspect-ratio anodic alumina nanofibers

NASA Astrophysics Data System (ADS)

Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Sakaguchi, Norihito; Suzuki, Ryosuke O.

2015-11-01

The formation behavior of anodic alumina nanofibers via anodizing in a concentrated pyrophosphoric acid under various conditions was investigated using electrochemical measurements and SEM/TEM observations. Pyrophosphoric acid anodizing at 293 K resulted in the formation of numerous anodic alumina nanofibers on an aluminum substrate through a thin barrier oxide and honeycomb oxide with narrow walls. However, long-term anodizing led to the chemical dissolution of the alumina nanofibers. The density of the anodic alumina nanofibers decreased as the applied voltage increased in the 10-75 V range. However, active electrochemical dissolution of the aluminum substrate occurred at a higher voltage of 90 V. Low temperature anodizing at 273 K resulted in the formation of long alumina nanofibers measuring several micrometers in length, even though a long processing time was required due to the low current density during the low temperature anodizing. In contrast, high temperature anodizing easily resulted in the formation and chemical dissolution of alumina nanofibers. The structural nanofeatures of the anodic alumina nanofibers were controlled by choosing of the appropriate electrochemical conditions, and numerous high-aspect-ratio alumina nanofibers (>100) can be successfully fabricated. The anodic alumina nanofibers consisted of a pure amorphous aluminum oxide without anions from the employed electrolyte.

Phase transition behaviors of the supported DPPC bilayer investigated by sum frequency generation (SFG) vibrational spectroscopy and atomic force microscopy (AFM).

PubMed

Wu, Heng-Liang; Tong, Yujin; Peng, Qiling; Li, Na; Ye, Shen

2016-01-21

The phase transition behaviors of a supported bilayer of dipalmitoylphosphatidyl-choline (DPPC) have been systematically evaluated by in situ sum frequency generation (SFG) vibrational spectroscopy and atomic force microscopy (AFM). By using an asymmetric bilayer composed of per-deuterated and per-protonated monolayers, i.e., DPPC-d75/DPPC and a symmetric bilayer of DPPC/DPPC, we were able to probe the molecular structural changes during the phase transition process of the lipid bilayer by SFG spectroscopy. It was found that the DPPC bilayer is sequentially melted from the top (adjacent to the solution) to bottom leaflet (adjacent to the substrate) over a wide temperature range. The conformational ordering of the supported bilayer does not decrease (even slightly increases) during the phase transition process. The conformational defects in the bilayer can be removed after the complete melting process. The phase transition enthalpy for the bottom leaflet was found to be approximately three times greater than that for the top leaflet, indicating a strong interaction of the lipids with the substrate. The present SFG and AFM observations revealed similar temperature dependent profiles. Based on these results, the temperature-induced structural changes in the supported lipid bilayer during its phase transition process are discussed in comparison with previous studies.

Advanced study of thermal behaviour of CSZ comparing with the classic YSZ coating

NASA Astrophysics Data System (ADS)

Dragomirescu, A.; Constantin, N.; Ştefan, A.; Manoliu, V.; Truşcă, R.

2017-01-01

Thermal barrier coatings (TBC) are advanced materials typically applied to metal surfaces subjected to extreme temperatures to protect them and increase their lifetime. Ceria stabilized zirconia ceramic layer (CSZ) is increasingly used as an alternative improved as replace for classical TBC system - yttria stabilized zirconia - thanks to superior properties, including mechanical and high resistance to thermal corrosion. The paper describes the thermal shock testing of two types of thermal barrier coatings used to protect a nickel super alloy. For the experimental procedure, it was used plate samples from nickel super alloy with a bond coat and a ceramic top coat. The top coat was different: on some samples, it was used YSZ and on others CSZ. Ni based super alloys have good corrosion resistance in reducing environments action, but poor in oxidizing conditions. Extreme environments can lead to loss of material by oxidation / corrosion, along with decreased mechanical properties of the substrate due to damaging elements which diffuses into the substrate at high temperatures. Using laboratory equipment, the TBC systems were exposed repeatedly to extreme high temperatures for a short time and then cooled. After the thermal shock tests, the samples were morph-structured characterized using electronic microscopy to analyze the changes. The experimental results were compared to rank the TBC systems in order of performance.

Thermal annealing evolution to physical properties of ZnS thin films as buffer layer for solar cell applications

NASA Astrophysics Data System (ADS)

Kaushalya; Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-07-01

The conventional CdS window layer in solar cells is found to be hazardous for the environment due to toxic nature of the cadmium. Therefore, in order to seek an alternative, a study on effect of post-annealing treatment on physical properties of e-beam evaporated ZnS thin films has been carried out where films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) substrates. The post annealing treatment was performed in air atmosphere within the temperature range from 100 °C to 500 °C. X-ray diffraction analysis reveals that the films on glass substrate are found to be amorphous at low temperature annealing (≤300 °C) while have α-ZnS hexagonal phase (wurtzite structure) at higher annealing. The patterns also show that the possibility of oxidation is increased significantly at temperature 500 °C which leads to decrease in direct band gap from 3.28 eV to 3.18 eV except films annealed at 300 °C (i.e. 3.39 eV). The maximum transmittance is found about 95% as a result of Doppler blue shift while electrical analysis indicated almost ohmic behavior between current and voltage and surface roughness is increased with post-annealing treatment.

Fire resistance properties of ceramic wool fiber reinforced intumescent coatings

NASA Astrophysics Data System (ADS)

Amir, N.; Othman, W. M. S. W.; Ahmad, F.

2015-07-01

This research studied the effects of varied weight percentage and length of ceramic wool fiber (CWF) reinforcement to fire retardant performance of epoxy-based intumescent coating. Ten formulations were developed using ammonium polyphosphate (APP), expandable graphite (EG), melamine (MEL) and boric acid (BA). The mixing was conducted in two stages; powdered materials were grinded in Rocklabs mortar grinder and epoxy-mixed using Caframo mixer at low speed mixing. The samples were applied on mild steel substrate and exposed to 500°C heat inside Carbolite electric furnace. The char expansion and its physical properties were observed. Scanning electron microscopy (SEM) analyses were conducted to inspect the fiber dispersion, fiber condition and the cell structure of both coatings and chars produced. Thermogravimetric analyses (TGA) were conducted to study the thermal properties of the coating such as degradation temperature and residual weight. Fire retardant performance was determined by measuring backside temperature of substrate in 1-hour, 1000°C Bunsen burner test according to UL 1709 fire regime. The results showed that intumescent coating reinforced with CWF produced better fire resistance performance. When compared to unreinforced coating, formulation S6-15 significantly reduced steel temperature at approximately 34.7% to around 175°C. However, higher fiber weight percentage had slightly decreased fire retardant performance of the coating.

Growth parameter dependent structural and optical properties of ZnO nanostructures on Si substrate by a two-zone thermal CVD.

PubMed

Lee, Hee Kwan; Yu, Jae Su

2012-04-01

We investigated the effect of growth parameters on the structural and optical properties of the ZnO nanostructures (NSs) grown on Au-coated Si substrate by a two-zone thermal chemical vapor deposition. The morphologies of ZnO NSs were controlled by various growth parameters, such as growth temperature, O2 flow rate, and working pressure, for different thicknesses of Au layer. The nanorod-like ZnO NSs were formed at 915 degrees C and the growth of two-dimensional structures, i.e., nanosheets, was enhanced with the increase of growth temperature up to 965 degrees C. It was found that the low working pressure contributed to improvement in vertical alignment and uniformity of ZnO NSs. The Zn/O atomic % ratio, which plays a key role in the growth mechanism of ZnO NSs, was changed by the growth parameters. The Zn/O atomic % ratio was increased with increasing the growth temperature, while it was decreased with increasing the working pressure. Under proper O2 flow rate, the ZnO nanorods with good crystallinity were fabricated with a Zn/O atomic % ratio of -0.9. For various growth parameters, the photoluminescence emission was slightly shifted with the ultraviolet emission related to the near band edge transition.

High temperature thermal management with boron nitride nanosheets.

PubMed

Wang, Yilin; Xu, Lisha; Yang, Zhi; Xie, Hua; Jiang, Puqing; Dai, Jiaqi; Luo, Wei; Yao, Yonggang; Hitz, Emily; Yang, Ronggui; Yang, Bao; Hu, Liangbing

2017-12-21

The rapid development of high power density devices requires more efficient heat dissipation. Recently, two-dimensional layered materials have attracted significant interest due to their superior thermal conductivity, ease of production and chemical stability. Among them, hexagonal boron nitride (h-BN) is electrically insulating, making it a promising thermal management material for next-generation electronics. In this work, we demonstrated that an h-BN thin film composed of layer-by-layer laminated h-BN nanosheets can effectively enhance the lateral heat dissipation on the substrate. We found that by using the BN-coated glass instead of bare glass as the substrate, the highest operating temperature of a reduced graphene oxide (RGO) based device could increase from 700 °C to 1000 °C, and at the same input power, the operating temperature of the RGO device is effectively decreased. The remarkable performance improvement using the BN coating originates from its anisotropic thermal conductivity: a high in-plane thermal conductivity of 14 W m -1 K -1 for spreading and a low cross-plane thermal conductivity of 0.4 W m -1 K -1 to avoid a hot spot right underneath the device. Our results provide an effective approach to improve the heat dissipation in integrated circuits and high power devices.

Key parameters and practices controlling pesticide degradation efficiency of biobed substrates.

PubMed

Karanasios, Evangelos; Karpouzas, Dimitrios G; Tsiropoulos, Nikolaos G

2012-01-01

We studied the contribution of each of the components of a compost-based biomixture (BX), commonly used in Europe, on pesticide degradation. The impact of other key parameters including pesticide dose, temperature and repeated applications on the degradation of eight pesticides, applied as a mixture, in a BX and a peat-based biomixture (OBX) was compared and contrasted to their degradation in soil. Incubation studies showed that straw was essential in maintaining a high pesticide degradation capacity of the biomixture, whereas compost, when mixed with soil, retarded pesticide degradation. The highest rates of degradation were shown in the biomixture composed of soil/compost/straw suggesting that all three components are essential for maximum biobed performance. Increasing doses prolonged the persistence of most pesticides with biomixtures showing a higher tolerance to high pesticide dose levels compared to soil. Increasing the incubation temperature from 15 °C to 25 °C resulted in lower t(1/2) values, with biomixtures performing better than soil at the lower temperature. Repeated applications led to a decrease in the degradation rates of most pesticides in all the substrates, with the exception of iprodione and metalaxyl. Overall, our results stress the ability of biomixtures to perform better than soil under unfavorable conditions and extreme pesticide dose levels. Copyright © Taylor & Francis Group, LLC

Optimization of lipase-catalyzed biodiesel by isopropanolysis in a continuous packed-bed reactor using response surface methodology.

PubMed

Chang, Cheng; Chen, Jiann-Hwa; Chang, Chieh-Ming J; Wu, Tsung-Ta; Shieh, Chwen-Jen

2009-10-31

Isopropanolysis reactions were performed using triglycerides with immobilized lipase in a solvent-free environment. This study modeled the degree of isopropanolysis of soybean oil in a continuous packed-bed reactor when Novozym 435 was used as the biocatalyst. Response surface methodology (RSM) and three-level-three-factor Box-Behnken design were employed to evaluate the effects of synthesis parameters, reaction temperature ( degrees C), flow rate (mL/min) and substrate molar ratio of isopropanol to soybean oil, on the percentage molar conversion of biodiesel by transesterification. The results show that flow rate and temperature have a significant effect on the percentage of molar conversion. On the basis of ridge max analysis, the optimum conditions for synthesis were as follows: flow rate 0.1 mL/min, temperature 51.5 degrees C and substrate molar ratio 1:4.14. The predicted value was 76.62+/-1.52% and actual experimental value was 75.62+/-0.81% molar conversion. Moreover, continuous enzymatic process for seven days did not show any appreciable decrease in the percent of molar conversion (75%). This work demonstrates the applicability of lipase catalysis to prepare isopropyl esters by transesterification in solvent-free system with a continuous packed-bed reactor for industrial production.

Effect of bond coat and preheat on the microstructure, hardness, and porosity of flame sprayed tungsten carbide coatings

NASA Astrophysics Data System (ADS)

Winarto, Winarto; Sofyan, Nofrijon; Rooscote, Didi

2017-06-01

Thermally sprayed coatings are used to improve the surface properties of tool steel materials. Bond coatings are commonly used as intermediate layers deposited on steel substrates (i.e. H13 tool steel) before the top coat is applied in order to enhance a number of critical performance criteria including adhesion of a barrier coating, limiting atomic migration of the base metal, and corrosion resistance. This paper presents the experimental results regarding the effect of nickel bond coat and preheats temperatures (i.e. 200°C, 300°C and 400°C) on microstructure, hardness, and porosity of tungsten carbide coatings sprayed by flame thermal coating. Micro-hardness, porosity and microstructure of tungsten carbide coatings are evaluated by using micro-hardness testing, optical microscopy, scanning electron microscopy, and X-ray diffraction. The results show that nickel bond coatings reduce the susceptibility of micro crack formation at the bonding area interfaces. The percentage of porosity level on the tungsten carbide coatings with nickel bond coat decreases from 5.36 % to 2.78% with the increase of preheat temperature of the steel substrate of H13 from 200°C to 400°C. The optimum hardness of tungsten carbide coatings is 1717 HVN in average resulted from the preheat temperature of 300°C.

Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Dazheng; Zhang, Chunfu, E-mail: cfzhang@xidian.edu.cn; Wang, Zhizhe

Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightlymore » improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.« less

Distinct temperature sensitivity of soil carbon decomposition in forest organic layer and mineral soil

PubMed Central

Xu, Wenhua; Li, Wei; Jiang, Ping; Wang, Hui; Bai, Edith

2014-01-01

The roles of substrate availability and quality in determining temperature sensitivity (Q10) of soil carbon (C) decomposition are still unclear, which limits our ability to predict how soil C storage and cycling would respond to climate change. Here we determined Q10 in surface organic layer and subsurface mineral soil along an elevation gradient in a temperate forest ecosystem. Q10 was calculated by comparing the times required to respire a given amount of soil C at 15 and 25°C in a 350-day incubation. Results indicated that Q10 of the organic layer was 0.22–0.71 (absolute difference) higher than Q10 of the mineral soil. Q10 in both the organic layer (2.5–3.4) and the mineral soil (2.1–2.8) increased with decreasing substrate quality during the incubation. This enhancement of Q10 over incubation time in both layers suggested that Q10 of more labile C was lower than that of more recalcitrant C, consistent with the Arrhenius kinetics. No clear trend of Q10 was found along the elevation gradient. Because the soil organic C pool of the organic layer in temperate forests is large, its higher temperature sensitivity highlights its importance in C cycling under global warming. PMID:25270905

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amir, N., E-mail: norlailiamir@petronas.com.my; Othman, W. M. S. W., E-mail: wamosa@gmail.com; Ahmad, F., E-mail: faizahmad@petronas.com.my

This research studied the effects of varied weight percentage and length of ceramic wool fiber (CWF) reinforcement to fire retardant performance of epoxy-based intumescent coating. Ten formulations were developed using ammonium polyphosphate (APP), expandable graphite (EG), melamine (MEL) and boric acid (BA). The mixing was conducted in two stages; powdered materials were grinded in Rocklabs mortar grinder and epoxy-mixed using Caframo mixer at low speed mixing. The samples were applied on mild steel substrate and exposed to 500°C heat inside Carbolite electric furnace. The char expansion and its physical properties were observed. Scanning electron microscopy (SEM) analyses were conducted tomore » inspect the fiber dispersion, fiber condition and the cell structure of both coatings and chars produced. Thermogravimetric analyses (TGA) were conducted to study the thermal properties of the coating such as degradation temperature and residual weight. Fire retardant performance was determined by measuring backside temperature of substrate in 1-hour, 1000°C Bunsen burner test according to UL 1709 fire regime. The results showed that intumescent coating reinforced with CWF produced better fire resistance performance. When compared to unreinforced coating, formulation S6-15 significantly reduced steel temperature at approximately 34.7% to around 175°C. However, higher fiber weight percentage had slightly decreased fire retardant performance of the coating.« less

Investigation of antimicrobial activity and statistical optimization of Bacillus subtilis SPB1 biosurfactant production in solid-state fermentation.

PubMed

Ghribi, Dhouha; Abdelkefi-Mesrati, Lobna; Mnif, Ines; Kammoun, Radhouan; Ayadi, Imen; Saadaoui, Imen; Maktouf, Sameh; Chaabouni-Ellouze, Semia

2012-01-01

During the last years, several applications of biosurfactants with medical purposes have been reported. Biosurfactants are considered relevant molecules for applications in combating many diseases. However, their use is currently extremely limited due to their high cost in relation to that of chemical surfactants. Use of inexpensive substrates can drastically decrease its production cost. Here, twelve solid substrates were screened for the production of Bacillus subtilis SPB1 biosurfactant and the maximum yield was found with millet. A Plackett-Burman design was then used to evaluate the effects of five variables (temperature, moisture, initial pH, inoculum age, and inoculum size). Statistical analyses showed that temperature, inoculum age, and moisture content had significantly positive effect on SPB1 biosurfactant production. Their values were further optimized using a central composite design and a response surface methodology. The optimal conditions of temperature, inoculum age, and moisture content obtained under the conditions of study were 37°C, 14 h, and 88%, respectively. The evaluation of the antimicrobial activity of this compound was carried out against 11 bacteria and 8 fungi. The results demonstrated that this biosurfactant exhibited an important antimicrobial activity against microorganisms with multidrug-resistant profiles. Its activity was very effective against Staphylococcus aureus, Staphylococcus xylosus, Enterococcus faecalis, Klebsiella pneumonia, and so forth.

Titanium disilicide formation by sputtering of titanium on heated silicon substrate

NASA Astrophysics Data System (ADS)

Tanielian, M.; Blackstone, S.

1984-09-01

We have sputter deposited titanium on bare silicon substrates at elevated temperatures. We find that at a substrate temperature of about 515 °C titanium silicide is formed due to the reaction of the titanium with the Si. The resistivity of the silicide is about 15 μΩ cm and it is not etchable in a selective titanium etch. This process can have applications in low-temperature, metal-oxide-semiconductor self-aligned silicide formation for very large scale integrated

Temperature distribution around thin electroconductive layers created on composite textile substrates

NASA Astrophysics Data System (ADS)

Korzeniewska, Ewa; Szczesny, Artur; Krawczyk, Andrzej; Murawski, Piotr; Mróz, Józef; Seme, Sebastian

2018-03-01

In this paper, the authors describe the distribution of temperatures around electroconductive pathways created by a physical vacuum deposition process on flexible textile substrates used in elastic electronics and textronics. Cordura material was chosen as the substrate. Silver with 99.99% purity was used as the deposited metal. This research was based on thermographic photographs of the produced samples. Analysis of the temperature field around the electroconductive layer was carried out using Image ThermaBase EU software. The analysis of the temperature distribution highlights the software's usefulness in determining the homogeneity of the created metal layer. Higher local temperatures and non-uniform distributions at the same time can negatively influence the work of the textronic system.

Nanostructured Coatings with Self-Healing and Temperature Homogenization Functions for High Temperature Sliding Interfaces

DTIC Science & Technology

2010-10-01

showing the stainless steel chamber (A), the rotatable substrate holder (B), the plasma burning between substrate holder and magnetrons (C) and three...Final Report University of Leoben, Austria 3 The sputtering system consists of a cylindrical stainless steel chamber (Ø 380 x 235mm) (A) which...are used. All coatings were deposited on three different substrates: AlSI M2 high speed steel , Si (100) wafers, and Fe foil. M2 substrates which

Electrical, structural and morphological properties of chemically sprayed F-doped ZnO films: effect of the ageing-time of the starting solution, solvent and substrate temperature

NASA Astrophysics Data System (ADS)

Guillén-Santiago, A.; Olvera, M. De La L.; Maldonado, A.; Asomoza, R.; Acosta, D. R.

2004-04-01

Conductive and highly transparent fluorine-doped zinc oxide (ZnO:F) thin films were deposited onto glass substrates by the chemical spray technique, using zinc acetate and hydrofluoric acid as precursors. Electrical, structural, morphological and optical characteristics were analyzed as a function of the ageing-time of the starting solution, alcoholic solvent type (methanol or ethanol) and the substrate temperature. The results show that these variables play a crucial role on the physical properties measured. The growth rates obtained were of 3 nm/s, showing that the chemical species involved are adequate for the film growth. The effect of the solution ageing-time on the electrical properties was monitored along three weeks. A gradual resistivity decrease with the ageing-time was observed, until a minimum value is reached, at 7 or 9 days depending on the alcohol employed. Films deposited after this time have resistivity values slightly higher. All the films were polycrystalline, with a hexagonal wurtzite structure whose preferential growth is strongly dependent on the deposition variables. Under optimal deposition conditions, ZnO:F films with a high transmittance in the visible spectrum (>85%), resistivity as low as 7 × 10-3 cm and maximum electronic mobility around of 4 cm2/(V-s) were obtained.

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

NASA Astrophysics Data System (ADS)

Deng, Zhuo; Chen, Baile; Chen, Xiren; Shao, Jun; Gong, Qian; Liu, Huiyun; Wu, Jiang

2018-05-01

In this work, the effects of p-type beryllium (Be) doping on the optical properties of GaSb epilayers grown on GaAs substrate by Molecular Beam Epitaxy (MBE) have been studied. Temperature- and excitation power-dependent photoluminescence (PL) measurements were performed on both nominally undoped and intentionally Be-doped GaSb layers. Clear PL emissions are observable even at the temperature of 270 K from both layers, indicating the high material quality. In the Be-doped GaSb layer, the transition energies of main PL features exhibit red-shift up to ∼7 meV, and the peak widths characterized by Full-Width-at-Half-Maximum (FWHM) also decrease. In addition, analysis on the PL integrated intensity in the Be-doped sample reveals a gain of emission signal, as well as a larger carrier thermal activation energy. These distinctive PL behaviors identified in the Be-doped GaSb layer suggest that the residual compressive strain is effectively relaxed in the epilayer, due possibly to the reduction of dislocation density in the GaSb layer with the intentional incorporation of Be dopants. Our results confirm the role of Be as a promising dopant in the improvement of crystalline quality in GaSb, which is a crucial factor for growth and fabrication of high quality strain-free GaSb-based devices on foreign substrates.

Nucleation and growth of single layer graphene on electrodeposited Cu by cold wall chemical vapor deposition

NASA Astrophysics Data System (ADS)

Das, Shantanu; Drucker, Jeff

2017-03-01

The nucleation density and average size of graphene crystallites grown using cold wall chemical vapor deposition (CVD) on 4 μm thick Cu films electrodeposited on W substrates can be tuned by varying growth parameters. Growth at a fixed substrate temperature of 1000 °C and total pressure of 700 Torr using Ar, H2 and CH4 mixtures enabled the contribution of total flow rate, CH4:H2 ratio and dilution of the CH4/H2 mixture by Ar to be identified. The largest variation in nucleation density was obtained by varying the CH4:H2 ratio. The observed morphological changes are analogous to those that would be expected if the deposition rate were varied at fixed substrate temperature for physical deposition using thermal evaporation. The graphene crystallite boundary morphology progresses from irregular/jagged through convex hexagonal to regular hexagonal as the effective C deposition rate decreases. This observation suggests that edge diffusion of C atoms along the crystallite boundaries, in addition to H2 etching, may contribute to shape evolution of the graphene crystallites. These results demonstrate that graphene grown using cold wall CVD follows a nucleation and growth mechanism similar to hot wall CVD. As a consequence, the vast knowledge base relevant to hot wall CVD may be exploited for graphene synthesis by the industrially preferable cold wall method.

Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing

PubMed Central

Kim, Hyungsoo; Bong, Jihye; Mikael, Solomon; Kim, Tong June; Williams, Justin C.; Ma, Zhenqiang

2016-01-01

Flexible graphene transistors built on a biocompatible Parylene C substrate would enable active circuitry to be integrated into flexible implantable biomedical devices. An annealing method to improve the performance of a flexible transistor without damaging the flexible substrate is also desirable. Here, we present a fabrication method of a flexible graphene transistor with a bottom-gate coplanar structure on a Parylene C substrate. Also, a current annealing method and its effect on the device performance have been studied. The localized heat generated by the current annealing method improves the drain current, which is attributed to the decreased contact resistance between graphene and S/D electrodes. A maximum current annealing power in the Parylene C-based graphene transistor has been extracted to provide a guideline for an appropriate current annealing. The fabricated flexible graphene transistor shows a field-effect mobility, maximum transconductance, and a Ion/Ioff ratio of 533.5 cm2/V s, 58.1 μS, and 1.76, respectively. The low temperature process and the current annealing method presented here would be useful to fabricate two-dimensional materials-based flexible electronics. PMID:27795570

Expanding Upon the MEMS Framework: How Temperature Impacts Organo-Mineral Interactions

NASA Astrophysics Data System (ADS)

Smith, K.; Waring, B. G.

2017-12-01

Microbial substrate use efficiency (SUE; the fraction of substrate carbon (C) incorporated into biomass vs. respired) affects the development of soil organic matter (SOM). An emerging theoretical model (the Microbial Efficiency-Matrix Stabilization (MEMS) framework) posits that microbial SUE acts as a filter for plant litter inputs, whereby a larger proportion of microbial products are synthesized from labile (and not recalcitrant) plant substrates. Thus, SOM stability depends on both the efficiency of microbial anabolism as well as the degree to which microbial products stabilize within the mineral soil matrix. In this study, we performed a laboratory microcosm experiment using diverse soils collected in Utah to test how substrate complexity, soil mineralogy, and temperature interact to control SOM formation. Prior to microcosm setup, we first removed organic C from our field soils by washing with concentrated hypochlorite solution. Microcosms were then assembled by mixing C-free soil with one of three substrates (glucose, cellulose, and lignin), and placed in incubators set to different temperatures (18°, 28°, and 38°C). Respiration rates were then estimated by periodically sampling headspace CO2 concentrations in each microcosm. Prior to C removal, we found that field soils exhibited distinct properties ranging from clay-rich vertisols (55:27:18, sand:silt:clay; 1.1% C), to loamy-sand entisols (85:11:4; 0.3% C), and organic-rich mollisols (79:17:4; 1.7% C). In the incubation experiment, consistent with enzyme kinetics theory, respiration rates increased as a function of incubation temperature (p < 0.0001), and that the temperature response of respiration was dependent on substrate (p < 0.0001), with the lignin treatment exhibiting the greatest temperature sensitivity. While respiration was significantly lower in the mollisol treatment (p < 0.0001), other soil effects (including interactions with temperature and substrate) were less clear. Together these results build upon the MEMS framework by highlighting the importance of organo-mineral interactions and temperature as controls on soil C cycling.

Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Zhu, Shuanglin

Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

Aerosol chemical vapor deposition of metal oxide films

DOEpatents

Ott, K.C.; Kodas, T.T.

1994-01-11

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

Hydrogen isotope fractionation during lipid biosynthesis by Haloarcula marismortui

NASA Astrophysics Data System (ADS)

Dirghangi, Sitindra S.; Pagani, Mark

2013-10-01

We studied the controls on the fractionation of hydrogen isotopes during lipid biosynthesis by Haloarcula marismortui, a halophilic archaea, in pure culture experiments by varying organic substrate, the hydrogen isotope composition (D/H) of water, temperature, and salinity. Cultures were grown on three substrates: succinate, pyruvate and glycerol with known hydrogen isotope compositions, and in water with different hydrogen isotopic compositions. All culture series grown on a particular substrate show strong correlations between δDarchaeol and δDwater. However, correlations are distinctly different for cultures grown on different substrates. Our results indicate that the metabolic pathway of substrate exerts a fundamental influence on the δD value of lipids, likely by influencing the D/H composition of NADPH (nicotinamide adenine dinucleotide phosphate), the reducing agent that contributes hydrogen to carbon atoms during lipid biosynthesis. Temperature and salinity have smaller, but similar effects on δDlipid, primarily due to the way temperature and salinity influence growth rate, as well as temperature effects on the activity of enzymes.

MOCVD Growth of III-V Photodetectors and Light Emitters for Integration of Optoelectronic Devices on Si substrates

NASA Astrophysics Data System (ADS)

Geng, Yu

With the increase of clock speed and wiring density in integrated circuits, inter-chip and intra-chip interconnects through conventional electrical wires encounter increasing difficulties because of the large power loss and bandwidth limitation. Optical interconnects have been proposed as an alternative to copper-based interconnects and are under intense study due to their large data capacity, high data quality and low power consumption. III-V compound semiconductors offer high intrinsic electron mobility, small effective electron mass and direct bandgap, which make this material system advantageous for high-speed optoelectronic devices. The integration of III-V optoelectronic devices on Si substrates will provide the combined advantage of a high level of integration and large volume production of Si-based electronic circuitry with the superior electrical and optical performance of III-V components, paving the way to a new generation of hybrid integrated circuits. In this thesis, the direct heteroepitaxy of photodetectors (PDs) and light emitters using metal-organic chemical vapor deposition for the integration of photonic devices on Si substrates were studied. First we studied the selective-area growth of InP/GaAs on patterned Si substrates for PDs. To overcome the loading effect, a multi-temperature composite growth technique for GaAs was developed. By decreasing various defects such as dislocations and anti-phase domains, the GaAs and InP buffer layers are with good crystalline quality and the PDs show high speed and low dark current performance both at the edge and center of the large growth well. Then the growth and fabrication of GaAs/AlGaAs QW lasers were studied. Ellipsometry was used to calibrate the Al composition of AlGaAs. Thick p and n type AlGaAs with a mirrorlike surface were grown by high V/III ratio and high temperature. The GaAs/AlGaAs broad area QW laser was successfully grown and fabricated on GaAs substrate and showed a pulsed lasing result with a threshold current density of about 800 A/cm2. For the integration of lasers on Si substrate, quantum dot (QD) lasers were studied. A flow-and-stop process of TBA was used to grow InAs QDs with the in-situ monitor EpiRas. QDs with a PL wavelength of ˜1.3 mum were grown on GaAs and Si substrates. To decrease the PL degradation problem caused by the contaminations from AlGaAs, an InGaAs insertion layer was inserted in between the AlGaAs and QDs region. Microdisk and a-Si waveguide lasers are designed and fabricated.

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (˜550 cm2/V s)

NASA Astrophysics Data System (ADS)

Xu, Chang; Gao, Hongmiao; Sugino, Takayuki; Miyao, Masanobu; Sadoh, Taizoh

2018-06-01

High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films on insulator structures should be fabricated with low-temperature processing conditions (≤500 °C). To achieve this, we investigate solid-phase crystallization of amorphous-GeSn (a-GeSn) films (Sn concentration: 2% and thickness: 50-200 nm) on insulating substrates, where thin a-Si under-layers (thickness: 0-20 nm) are introduced between a-GeSn films and insulating substrates. The GeSn films are polycrystallized by annealing (450 °C, 20 h) for all samples irrespective of a-GeSn and a-Si thickness conditions, while the Si films remain amorphous. Analysis of crystal structures of GeSn films (thickness: 50 nm) reveals that grain sizes decrease from ˜10 μm to 2-3 μm by the introduction of a-Si under-layers (thickness: 3-20 nm). This phenomenon is attributed to the change in dominant nucleation sites from the interface to the bulk, which significantly decreases grain-boundary scattering of carriers through a decrease in the barrier heights at grain boundaries. Bulk-nucleation further becomes dominant by increasing the GeSn film thickness. As a result, a high carrier mobility of ˜550 cm2/V s is realized for GeSn films (thickness: 100 nm) grown with a-Si under-layers. This mobility is the largest among ever reported data for Ge and GeSn grown on an insulator. This technique will facilitate realization of high-speed TFTs for use in the next generation of electronics.

Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping

NASA Astrophysics Data System (ADS)

Kwon, Youngim; Yang, Changyol; Yoon, Sang-Hwa; Um, Han-Don; Lee, Jung-Ho; Yoo, Bongyoung

2013-11-01

A major goal in solar cell research is to reduce the cost of the final module. Reducing the thickness of the crystalline silicon substrate to several tens of micrometers can reduce material costs. In this work, we describe the electrodeposition of a Ni-P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin-film silicon substrate. After lift-off of the thin Si film, the mother substrate can be reused, reducing material costs. Moreover, the low-temperature process expected to be improved Si substrate quality.

Enzymatic oxidation of ethanol in the gaseous phase.

PubMed

Barzana, E; Karel, M; Klibanov, A M

1989-11-01

The enzymatic conversion of gaseous substrates represents a novel concept in bioprocessing. A critical parameter in such systems is the water activity, A(w) The present article reports the effect of A(w) on the catalytic performance of alcohol oxidase acting on ethanol vapors. Enzyme activity in the gas-phase reaction increases several orders of magnitude, whereas the thermostability decreases drastically when A(w) is increased from 0.11 to 0.97. The enzyme is active on gaseous substrates even at hydration levels below the monolayer coverage. Enhanced thermostability at lower hydrations results in an increase in the optimum temperature of the gas-phase reaction catalyzed by alcohol oxidase. The apparent activation energy decreases as A(w) increases, approaching the value obtained for the enzyme in aqueous solution. The formation of a pread-sorbed ethanol phase on the surface of the support is not a prerequisite for the reaction, suggesting that the reaction occurs by direct interaction of the gaseous substrate with the enzyme. The gas-phase reaction follows Michaelis-Menten kinetics, with a K(m) value almost 100 times lower than that in aqueous solution. Based on vapor-liquid equilibrium data and observed K(m) values, it is postulated that during the gas-phase reaction the ethanol on the enzyme establishes an equilibrium with the ethanol vapor similar to that between ethanol in water and ethanol in the gas phase.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

PubMed

Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

2017-03-22

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

Temperature, inocula and substrate: Contrasting electroactive consortia, diversity and performance in microbial fuel cells.

PubMed

Heidrich, E S; Dolfing, J; Wade, M J; Sloan, W T; Quince, C; Curtis, T P

2018-02-01

The factors that affect microbial community assembly and its effects on the performance of bioelectrochemical systems are poorly understood. Sixteen microbial fuel cell (MFC) reactors were set up to test the importance of inoculum, temperature and substrate: Arctic soil versus wastewater as inoculum; warm (26.5°C) versus cold (7.5°C) temperature; and acetate versus wastewater as substrate. Substrate was the dominant factor in determining performance and diversity: unexpectedly the simple electrogenic substrate delivered a higher diversity than a complex wastewater. Furthermore, in acetate fed reactors, diversity did not correlate with performance, yet in wastewater fed ones it did, with greater diversity sustaining higher power densities and coulombic efficiencies. Temperature had only a minor effect on power density, (Q 10 : 2 and 1.2 for acetate and wastewater respectively): this is surprising given the well-known temperature sensitivity of anaerobic bioreactors. Reactors were able to operate at low temperature with real wastewater without the need for specialised inocula; it is speculated that MFC biofilms may have a self-heating effect. Importantly, the warm acetate fed reactors in this study did not act as direct model for cold wastewater fed systems. Application of this technology will encompass use of real wastewater at ambient temperatures. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahato, S., E-mail: som.phy.ism@gmail.com; Shiwakoti, N.; Kar, A. K.

2015-06-24

This article reports the measurement of temperature-dependent barrier height and ideality factor of n-CdSe/Cu Schottky barrier diode. The Cadmium Selenide (CdSe) thin films have been deposited by simple electrodeposition technique. The XRD measurements ravels the deposited single phase CdSe films are highly oriented on (002) plane and the average particle size has been calculated to be ~18 nm. From SEM characterization, it is clear that the surface of CdSe thin films are continuous, homogeneous and the film is well adhered to the substrate and consists of fine grains which are irregular in shape and size. Current-Voltage characteristics have been measured atmore » different temperatures in the range (298 K – 353 K). The barrier height and ideality factor are found to be strongly temperature dependent. The inhomogenious barrier height increases and ideality factor decreases with increase in temperature. The expectation value has been calculated and its value is 0.30 eV.« less

Inkjet-Printed Graphene/PEDOT:PSS Temperature Sensors on a Skin-Conformable Polyurethane Substrate.

PubMed

Vuorinen, Tiina; Niittynen, Juha; Kankkunen, Timo; Kraft, Thomas M; Mäntysalo, Matti

2016-10-18

Epidermal electronic systems (EESs) are skin-like electronic systems, which can be used to measure several physiological parameters from the skin. This paper presents materials and a simple, straightforward fabrication process for skin-conformable inkjet-printed temperature sensors. Epidermal temperature sensors are already presented in some studies, but they are mainly fabricated using traditional photolithography processes. These traditional fabrication routes have several processing steps and they create a substantial amount of material waste. Hence utilizing printing processes, the EES may become attractive for disposable systems by decreasing the manufacturing costs and reducing the wasted materials. In this study, the sensors are fabricated with inkjet-printed graphene/PEDOT:PSS ink and the printing is done on top of a skin-conformable polyurethane plaster (adhesive bandage). Sensor characterization was conducted both in inert and ambient atmosphere and the graphene/PEDOT:PSS temperature sensors (thermistors) were able reach higher than 0.06% per degree Celsius sensitivity in an optimal environment exhibiting negative temperature dependence.

Microwave Backscatter-Based Wireless Temperature Sensor Fabricated by an Alumina-Backed Au Slot Radiation Patch.

PubMed

Lu, Fei; Wang, Haixing; Guo, Yanjie; Tan, Qiulin; Zhang, Wendong; Xiong, Jijun

2018-01-16

A wireless and passive temperature sensor operating up to 800 °C is proposed. The sensor is based on microwave backscatter RFID (radio frequency identification) technology. A thin-film planar structure and simple working principle make the sensor easy to operate under high temperature. In this paper, the proposed high temperature sensor was designed, fabricated, and characterized. Here the 99% alumina ceramic with a dimension of 40 mm × 40 mm × 1 mm was prepared in micromechanics for fabrication of the sensor substrate. The metallization of the Au slot patch was realized in magnetron sputtering with a slot width of 2 mm and a slot length of 32 mm. The measured resonant frequency of the sensor at 25 °C is 2.31 GHz. It was concluded that the resonant frequency decreases with the increase in the temperature in range of 25-800 °C. It was shown that the average sensor sensitivity is 101.94 kHz/°C.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO2 Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kana, J. B. Kana; Ndjaka, J. M.; Manyala, N.; Nemraoui, O.; Beye, A. C.; Maaza, M.

2008-09-01

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO2) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 °C to 600 °C. The X-ray diffraction results demonstrated that the Au and VO2 were well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 °C to 100 °C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at ˜57 nm for substrate temperature higher than 500 °C.

Optimization of MgF2-deposition temperature for far UV Al mirrors.

PubMed

De Marcos, Luis V Rodríguez; Larruquert, Juan I; Méndez, José A; Gutiérrez-Luna, Nuria; Espinosa-Yáñez, Lucía; Honrado-Benítez, Carlos; Chavero-Royán, José; Perea-Abarca, Belén

2018-04-02

Progress towards far UV (FUV) coatings with enhanced reflectance is invaluable for future space missions, such as LUVOIR. This research starts with the procedure developed to enhance MgF 2 -protected Al reflectance through depositing MgF 2 on a heated aluminized substrate [Quijada et al., Proc. SPIE 8450, 84502H (2012)] and it establishes the optimum deposition temperature of the MgF 2 protective film for Al mirrors with a reflectance as high as ~90% at 121.6 nm. Al films were deposited at room temperature and protected with a MgF 2 film deposited at various temperatures ranging from room temperature to 350°C. It has been found that mirror reflectance in the short FUV range continuously increases with MgF 2 deposition temperature up to 250°C, whereas reflectance decreases at temperatures of 300°C and up. The short-FUV reflectance of mirrors deposited at 250°C only slightly decreased over time by less than 1%, compared to a larger decay for standard coatings prepared at room temperature. Al mirrors protected with MgF 2 deposited at room temperature that were later annealed displayed a similar reflectance enhancement that mirrors protected at high temperatures. MgF 2 and Al roughness as well as MgF 2 density were analyzed by x-ray grazing incidence reflectometry. A noticeable reduction in both Al and MgF 2 roughness, as well as an increase of MgF 2 density, were measured for films deposited at high temperatures. On the other hand, it was found a strong correlation between the protective-layer deposition temperature (or post-deposition annealing temperature) and the pinhole open area in Al films, which could be prevented with a somewhat thicker Al film.

Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

PubMed

Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

2010-05-01

Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

Superconducting articles of manufacture and method of producing same

DOEpatents

Newkirk, Lawrence R.; Valencia, Flavio A.

1980-01-01

Bulk coatings of Nb.sub.3 Ge with high superconducting transition temperatures bonded to metallic substrates and a chemical vapor deposition method for producing such coatings on metallic substrates are disclosed. In accordance with the method, a Nb.sub.3 Ge coating having a transition temperature in excess of 21.5 K may be tightly bonded to a copper substrate.

Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination

DOEpatents

Sopori, Bhushan L.

1993-01-01

Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips, combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.

TiC-Fe-Based Composite Coating Prepared by Self-Propagating High-Temperature Synthesis

NASA Astrophysics Data System (ADS)

He, Shen; Fan, Xi'an; Chang, Qingming; Xiao, Lixiang

2017-06-01

TiC-Fe-based composite coatings were prepared in situ by self-propagating high-temperature synthesis combined with vacuum expendable pattern casting process. The band-like TiC phase embedded in a continuous Fe binder. There were no obvious defects and impurities at the interface between coatings and matrices. Fe presented consecutively in the coating zones and substrate zones without interruption and the microhardness in the cross-sectional area of the coating-matrix reduces continuously from the coating to the matrix area, indicating a good metallurgical bonding between the coatings and matrices. The effect of casting temperature on the microstructure and hardness of TiC-Fe-based composite coating was investigated in detail. The TiC particles formed at low casting temperature were nearly spherical in shape, and the size of TiC particles increased with increasing casting temperature due to more agglomeration. The hardness of the coatings increased first and then decreased with increasing casting temperature, and reached the highest value of 68 HRC when the casting temperature was 1773 K (1500 °C), which was twice more than that of the matrix.

Thick adherent dielectric films on plastic substrates and method for depositing same

DOEpatents

Wickboldt, Paul; Ellingboe, Albert R.; Theiss, Steven D.; Smith, Patrick M.

2002-01-01

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

Temperature-driven adaptation of the bacterial community in peat measured by using thymidine and leucine incorporation.

PubMed

Ranneklev, S B; Bååth, E

2001-03-01

The temperature-driven adaptation of the bacterial community in peat was studied, by altering temperature to simulate self-heating and a subsequent return to mesophilic conditions. The technique used consisted of extracting the bacterial community from peat using homogenization-centrifugation and measuring the rates of thymidine (TdR) or leucine (Leu) incorporation by the extracted bacterial community at different temperatures. Increasing the peat incubation temperature from 25 degrees C to 35, 45, or 55 degrees C resulted in a selection of bacterial communities whose optimum temperatures for activity correlated to the peat incubation temperatures. Although TdR and Leu incorporations were significantly correlated, the Leu/TdR incorporation ratios were affected by temperature. Higher Leu/TdR incorporation ratios were found at higher temperatures of incubation of the extracted bacterial community. Higher Leu/TdR incorporation ratios were also found for bacteria in peat samples incubated at higher temperatures. The reappearance of the mesophilic community and disappearance of the thermophilic community when the incubation temperature of the peat was shifted down were monitored by measuring TdR incorporation at 55 degrees C (thermophilic activity) and 25 degrees C (mesophilic activity). Shifting the peat incubation temperature from 55 to 25 degrees C resulted in a recovery of the mesophilic activity, with a subsequent disappearance of the thermophilic activity. The availability of substrate for bacterial growth varied over time and among different peat samples. To avoid confounding effects of substrate availability, a temperature adaptation index was calculated. This index consisted of the log(10) ratio of TdR incorporation at 55 and 25 degrees C. The temperature index decreased linearly with time, indicating that no thermophilic activity would be detected by the TdR technique 1 month after the temperature downshift. There were no differences between the slopes of the temperature adaptation indices over time for peat samples incubated at 55 degrees C 3 or 11 days before incubation at 25 degrees C. Thus, different levels of bacterial activity did not affect the temperature-driven adaptation of the bacterial community.

Temperature-Driven Adaptation of the Bacterial Community in Peat Measured by Using Thymidine and Leucine Incorporation

PubMed Central

Ranneklev, Sissel Brit; Bååth, Erland

2001-01-01

The temperature-driven adaptation of the bacterial community in peat was studied, by altering temperature to simulate self-heating and a subsequent return to mesophilic conditions. The technique used consisted of extracting the bacterial community from peat using homogenization-centrifugation and measuring the rates of thymidine (TdR) or leucine (Leu) incorporation by the extracted bacterial community at different temperatures. Increasing the peat incubation temperature from 25°C to 35, 45, or 55°C resulted in a selection of bacterial communities whose optimum temperatures for activity correlated to the peat incubation temperatures. Although TdR and Leu incorporations were significantly correlated, the Leu/TdR incorporation ratios were affected by temperature. Higher Leu/TdR incorporation ratios were found at higher temperatures of incubation of the extracted bacterial community. Higher Leu/TdR incorporation ratios were also found for bacteria in peat samples incubated at higher temperatures. The reappearance of the mesophilic community and disappearance of the thermophilic community when the incubation temperature of the peat was shifted down were monitored by measuring TdR incorporation at 55°C (thermophilic activity) and 25°C (mesophilic activity). Shifting the peat incubation temperature from 55 to 25°C resulted in a recovery of the mesophilic activity, with a subsequent disappearance of the thermophilic activity. The availability of substrate for bacterial growth varied over time and among different peat samples. To avoid confounding effects of substrate availability, a temperature adaptation index was calculated. This index consisted of the log10 ratio of TdR incorporation at 55 and 25°C. The temperature index decreased linearly with time, indicating that no thermophilic activity would be detected by the TdR technique 1 month after the temperature downshift. There were no differences between the slopes of the temperature adaptation indices over time for peat samples incubated at 55°C 3 or 11 days before incubation at 25°C. Thus, different levels of bacterial activity did not affect the temperature-driven adaptation of the bacterial community. PMID:11229900

Influence of Substrate Biasing on (Ba,Sr)TiO3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

NASA Astrophysics Data System (ADS)

Matsumoto, Takeshi; Niino, Atsushi; Ohtsu, Yasunori; Misawa, Tatsuya; Yonesu, Akira; Fujita, Hiroharu; Miyake, Shoji

2004-03-01

(Ba,Sr)TiO3 (BST) films were deposited by electron cyclotron resonance (ECR) plasma sputtering with mirror confinement. DC bias voltage was applied to Pt/Ti/SiO2/Si substrates during deposition to vary the intensity of bombardment of energetic ions and to modify film properties. BST films deposited on the substrates at floating potential (approximately +20 V) were found to be amorphous, while films deposited on +40 V-biased substrates were crystalline in spite of a low substrate temperature below 648 K. In addition, atomic diffusion, which causes deterioration in the electrical properties of the films, was hardly observed in the crystallized films deposited with +40 V bias perhaps due to the low substrate temperature. Plasma diagnoses revealed that application of a positive bias to the substrate reduced the energy of ion bombardment and increased the density of excited neutral particles, which was assumed to result in the promotion of chemical reactions during deposition and the crystallization of BST films at a low temperature.

Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

DOEpatents

Carlisle, John A [Plainfield, IL; Gruen, Dieter M [Downers Grove, IL; Auciello, Orlando [Bolingbrook, IL; Xiao, Xingcheng [Woodridge, IL

2009-07-07

A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.

Effect of substrate preheating treatment on the microstructure and ultrasonic cavitation erosion behavior of plasma-sprayed YSZ coatings.

PubMed

Deng, Wen; An, Yulong; Hou, Guoliang; Li, Shuangjian; Zhou, Huidi; Chen, Jianmin

2018-09-01

Inconel 718 was used as the substrate and preheated at different temperatures to deposit yttrium stabilized zirconia (denoted as YSZ) coatings by atmospheric plasma spraying. The microstructure of the as-deposited YSZ coatings and those after cavitation-erosion tests were characterized by field emission scanning electron microscopy, Raman spectroscopy, and their hardness and toughness as well as cavitation-erosion resistance were evaluated in relation to the effect of substrate preheating temperature. Results indicate that the as-deposited YSZ coatings exhibit typical layered structure and consist of columnar crystals. With the increase of the substrate preheating temperature, the compactness and cohesion strength of coatings are obviously enhanced, which result in the increases in the hardness, elastic modulus and toughness as well as cavitation-erosion resistance of the ceramic coatings therewith. Particularly, the YSZ coating deposited at a substrate preheating temperature of 800 °C exhibits the highest hardness and toughness as well as the strongest lamellar interfacial bonding and cavitation-erosion resistance (its cavitation-erosion life is as much as 8 times than that of deposited at room temperature). Copyright © 2018 Elsevier B.V. All rights reserved.

Optimal Substrate Preheating Model for Thermal Spray Deposition of Thermosets onto Polymer Matrix Composites

NASA Technical Reports Server (NTRS)

Ivosevic, M.; Knight, R.; Kalidindi, S. R.; Palmese, G. R.; Tsurikov, A.; Sutter, J. K.

2003-01-01

High velocity oxy-fuel (HVOF) sprayed, functionally graded polyimide/WC-Co composite coatings on polymer matrix composites (PMC's) are being investigated for applications in turbine engine technologies. This requires that the polyimide, used as the matrix material, be fully crosslinked during deposition in order to maximize its engineering properties. The rapid heating and cooling nature of the HVOF spray process and the high heat flux through the coating into the substrate typically do not allow sufficient time at temperature for curing of the thermoset. It was hypothesized that external substrate preheating might enhance the deposition behavior and curing reaction during the thermal spraying of polyimide thermosets. A simple analytical process model for the deposition of thermosetting polyimide onto polymer matrix composites by HVOF thermal spray technology has been developed. The model incorporates various heat transfer mechanisms and enables surface temperature profiles of the coating to be simulated, primarily as a function of substrate preheating temperature. Four cases were modeled: (i) no substrate preheating; (ii) substrates electrically preheated from the rear; (iii) substrates preheated by hot air from the front face; and (iv) substrates electrically preheated from the rear and by hot air from the front.

Method for materials deposition by ablation transfer processing

DOEpatents

Weiner, K.H.

1996-04-16

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs. 1 fig.

Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

DOEpatents

Liu, David K.

1992-01-01

Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

Low temperature effects on nitrification and nitrifier community structure in V-ASP for decentralized wastewater treatment and its improvement by bio-augmentation.

PubMed

Yuan, Jiajia; Dong, Wenyi; Sun, Feiyun; Zhao, Ke

2018-03-01

The vegetation-activated sludge process (V-ASP) has been proved to be an environment-friendly decentralized wastewater treatment system with extra esthetic function and less footprint. However, the effects of low temperature on the treatment performance of V-ASP and related improvement methods are rarely investigated, up to now. In this work, the effect of low temperature on nitrification in V-ASP was comprehensively investigated from overall nitrification performance, substrate utilization kinetics, functional enzymatic activities, and microbial community structure shift by comparison with conventional ASP. Bio-augmentation methods in terms of single-time nitrifier-enriched biomass dosage were employed to improve nitrification efficiency in bench- and full-scale systems. The experiment results demonstrated that the NH 4 + -N removal efficiency in V-ASP system decreased when the operational temperature decreased from 30 to 15 °C, and the decreasing extent was rather smaller compared to ASP, as well as ammonium and nitrite oxidation rates and enzymatic activities, which indicated the V-ASP system possesses high resistance to low temperature. With direct dosage of 1.6 mg nitrifier/gSS sludge, the nitrification efficiency in V-ASP was enhanced dramatically from below 50% to above 90%, implying that bio-augmentation was effective for V-ASP whose enzymatic activities and microbial communities were both also improved. The feasibility and effectiveness of bio-augmentation was further confirmed in a full-scale V-ASP system after a long-term experiment which is instructive for the practical application.

Highly (002) textured large grain bcc Cr{sub 80}Mn{sub 20} seed layer on Cr{sub 50}Ti{sub 50} amorphous layer for FePt-C granular film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Seong-Jae, E-mail: jsjigst@ecei.tohoku.ac.jp; Saito, Shin; Hinata, Shintaro

Effect of bcc Cr{sub 80}Mn{sub 20} seed layer and Cr{sub 50}Ti{sub 50} amorphous texture inducing layer on the heteroepitaxy system in FePt-C granular film was studied by introducing a new concept of the layered structure. The concept suggested that the large grain seed layer in which the crystallographic texture was initially formed on an amorphous layer in the layered structure can reduce the angular distribution of (002) c-axis crystal orientation in the FePt-C granular film owing to heteroepitaxial growth. Structure analysis by X-ray diffraction revealed that (1) when the substrate heating temperature was elevated from 300 °C to 500 °C, grain sizemore » in the seed layer increased from 9.8 nm to 11.6 nm, and then decreased with further increasing the substrate temperature. The reduction of the grain size over 500 °C corresponds to the crystallization of the amorphous texture inducing layer, (2) when the grain size increased from 9.8 nm to 11.6 nm, the angular distribution of the (002) orientation in the seed layer dramatically decreased from 13.7° to 4.1°. It was shown that the large grain seed layer increased the perpendicular hysteresis in FePt-C granular film.« less

Drop evaporation on superhydrophobic PTFE surfaces driven by contact line dynamics.

PubMed

Ramos, S M M; Dias, J F; Canut, B

2015-02-15

In the present study, we experimentally study the evaporation modes and kinetics of sessile drops of water on highly hydrophobic surfaces (contact angle ∼160°), heated to temperatures ranging between 40° and 70 °C. These surfaces were initially constructed by means of controlled tailoring of polytetrafluoroethylene (PTFE) substrates. The evaporation of droplets was observed to occur in three distinct phases, which were the same for the different substrate temperatures. The drops started to evaporate in the constant contact radius (CCR) mode, then switched to a more complex mode characterized by a set of stick-slip events accompanied by a decrease in contact angle, and finally shifted to a mixed mode in which the contact radius and contact angle decreased simultaneously until the drops had completely evaporated. It is shown that in the case of superhydrophobic surfaces, the energy barriers (per unit length) associated with the stick-slip motion of a drop ranges in the nJ m(-1) scale. Furthermore, analysis of the evaporation rates, determined from experimental data show that, even in the CCR mode, a linear relationship between V(2/3) and the evaporation time is verified. The values of the evaporation rate constants are found to be higher in the pinned contact line regime (the CCR mode) than in the moving contact line regime. This behavior is attributed to the drop's higher surface to volume ratio in the CCR mode. Copyright © 2014 Elsevier Inc. All rights reserved.

Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200 C and method of fabrication

DOEpatents

Carey, P.G.; Smith, P.M.; Havens, J.H.; Jones, P.

1999-01-05

Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100 C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired. 12 figs.

Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200.degree. C and method of fabrication

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Havens, John; Jones, Phil

1999-01-01

Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100.degree. C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired.

Summary Abstract: Growth and Alloying of Pd Films on Mo(110) Surfaces

NASA Technical Reports Server (NTRS)

Park, Ch. E.; Poppa, H.; Bauer, E.

1985-01-01

Alloying in small metal particles and in very thin films has recently received considerable attention. In the past it has been generally assumed that alloying is insignificant up to temperatures. Thus many epitaxy experiments of metals on metals with complete miscibility were performed at temperatures between 200 and 400 C and analyzed assuming no alloying. In particular, alloying was not suspected if the film material was not soluble in the substrate. In the present study, which was stimulated by annealing-induced CO adsorption anomalies on thin film surfaces, it has become evident that low temperature alloying can occur in thin films on a metal substrate which is refractory and has very strong interatomic bonds (as evidenced by a high sublimation energy) provided that the substrate is soluble in the film material. A good example of such a film-substrate combination is Pd on Mo. The solubility of Pd in Mo is very at temperatures below 1000 K but Pd can dissolve slightly more than 40 at. % Mo even at low temperatures.

Thermal process induced change of conductivity in As-doped ZnO

NASA Astrophysics Data System (ADS)

Su, S. C.; Fan, J. C.; Ling, C. C.

2012-02-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

Room-temperature growth of thin films of niobium on strontium titanate (0 0 1) single-crystal substrates for superconducting joints

NASA Astrophysics Data System (ADS)

Shimizu, Yuhei; Tonooka, Kazuhiko; Yoshida, Yoshiyuki; Furuse, Mitsuho; Takashima, Hiroshi

2018-06-01

With the eventual aim of forming joints between superconducting wires of YBa2Cu3O7-δ (YBCO), thin films of Nb were grown at room-temperature on SrTiO3 (STO) (0 0 1), a single-crystal substrate that shows good lattice matching with YBCO. The crystallinity, surface morphology, and superconducting properties of the Nb thin films were investigated and compared with those of similar films grown on a silica glass substrate. The Nb thin films grew with an (hh0) orientation on both substrates. The crystallinity of the Nb thin films on the STO substrate was higher than that on the silica glass substrate. X-ray diffraction measurements and observation of the surface morphology by atomic-force microscopy indicated that Nb grew in the plane along the [1 0 0] and [0 1 0] directions of the STO substrate. This growth mode relaxes strain between Nb and STO, and is believed to lead to the high crystallinity observed. As a result, the Nb thin films on the STO substrates showed lower electric resistivity and a higher superconducting transition temperature than did those on the silica glass substrates. The results of this study should be useful in relation to the production of superconducting joints.

Design of a cylindrical LED substrate without radiator

NASA Astrophysics Data System (ADS)

Tang, Fan; Guo, Zhenning

2017-12-01

To reduce the weight and production costs of light-emitting diode (LED) lamps, we applied the principle of the chimney effect to design a cylindrical LED substrate without a radiator. We built a 3D model by using Solidworks software and applied the flow simulation plug-in to conduct model simulation, thereby optimizing the heat source distribution and substrate thickness. The results indicate that the design achieved optimal cooling with a substrate with an upper extension length of 35 mm, a lower extension length of 8 mm, and a thickness of 1 mm. For a substrate of those dimensions, the highest LED chip temperature was 64.78 °C, the weight of the substrate was 35.09 g, and R jb = 7.00 K/W. If the substrate is powered at 8, 10, and 12 W, its temperature meets LED safety requirements. In physical tests, the highest temperature for a physical 8 W cylindrical LED substrate was 66 °C, which differed by only 1.22 °C from the simulation results, verifying the validity of the simulation. The designed cylindrical LED substrate can be used in high-power LED lamps that do not require radiators. This design is not only excellent for heat dissipation, but also for its low weight, low cost, and simplicity of manufacture.

Recrystallization in Si upon ion irradiation at room temperature in Co/Si(111) thin film systems

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Satpati, B.; Dev, B. N.

2018-04-01

After several decades of research it was concluded that for a constant flux recrystallization in Si upon ion irradiation is possible only at high temperature. At low temperature or at room temperature only amorphization can take place. However we have observed recrystallization in Si upon ion irradiation at room temperature in a Co/Si thin film system. The Co/Si sample was prepared by deposition of 25 nm Co on clean Si(111) substrate. An oxide layer (˜ 2nm) of cobalt at the top of the film due to air exposure. The ion irradiation was done at room temperature under high vacuum with 1MeV Si+ ion with low beam current < 400 nA. Earlier we have shown similar ion induced recrystallization in Si(100) substrate which had a sandwich Si/Ni/Si structure. This system had an epitaxial buffer Si layer on Si substrate. This study also shows that the phenomenon is independent of substrate orientation and buffer layer. We have used transmission electron microscopy (TEM) to study the recrystallization behavior.

Full-field measurement of surface topographies and thin film stresses at elevated temperatures by digital gradient sensing method.

PubMed

Zhang, Changxing; Qu, Zhe; Fang, Xufei; Feng, Xue; Hwang, Keh-Chih

2015-02-01

Thin film stresses in thin film/substrate systems at elevated temperatures affect the reliability and safety of such structures in microelectronic devices. The stresses result from the thermal mismatch strain between the film and substrate. The reflection mode digital gradient sensing (DGS) method, a real-time, full-field optical technique, measures deformations of reflective surface topographies. In this paper, we developed this method to measure topographies and thin film stresses of thin film/substrate systems at elevated temperatures. We calibrated and compensated for the air convection at elevated temperatures, which is a serious problem for optical techniques. We covered the principles for surface topography measurements by the reflection mode DGS method at elevated temperatures and the governing equations to remove the air convection effects. The proposed method is applied to successfully measure the full-field topography and deformation of a NiTi thin film on a silicon substrate at elevated temperatures. The evolution of thin film stresses obtained by extending Stoney's formula implies the "nonuniform" effect the experimental results have shown.

Room temperature bonding and debonding of polyimide film and glass substrate based on surface activate bonding method

NASA Astrophysics Data System (ADS)

Takeuchi, Kai; Fujino, Masahisa; Matsumoto, Yoshiie; Suga, Tadatomo

2018-02-01

The temporary bonding of polyimide (PI) films and glass substrates is a key technology for realizing flexible devices with thin-film transistors (TFTs). In this paper, we report the surface activated bonding (SAB) method using Si intermediate layers and its bonding and debonding mechanisms after heating. The bonding interface composed of Si and Fe shows a higher bond strength than the interface of only Si, while the bond strengths of both interfaces decrease with post bonding heating. It is also clarified by composition analysis on the debonded surfaces and cross-sectional observation of the bonding interface that the bond strength depends on the toughness of the intermediated layers and PI. The SAB method using Si intermediate layers is found to be applicable to the bonding and debonding of PI and glass.

Effect of ambient temperature and relative humidity on interfacial temperature during early stages of drop evaporation.

PubMed

Fukatani, Yuki; Orejon, Daniel; Kita, Yutaku; Takata, Yasuyuki; Kim, Jungho; Sefiane, Khellil

2016-04-01

Understanding drop evaporation mechanisms is important for many industrial, biological, and other applications. Drops of organic solvents undergoing evaporation have been found to display distinct thermal patterns, which in turn depend on the physical properties of the liquid, the substrate, and ambient conditions. These patterns have been reported previously to be bulk patterns from the solid-liquid to the liquid-gas drop interface. In the present work the effect of ambient temperature and humidity during the first stage of evaporation, i.e., pinned contact line, is studied paying special attention to the thermal information retrieved at the liquid-gas interface through IR thermography. This is coupled with drop profile monitoring to experimentally investigate the effect of ambient temperature and relative humidity on the drop interfacial thermal patterns and the evaporation rate. Results indicate that self-generated thermal patterns are enhanced by an increase in ambient temperature and/or a decrease in humidity. The more active thermal patterns observed at high ambient temperatures are explained in light of a greater temperature difference generated between the apex and the edge of the drop due to greater evaporative cooling. On the other hand, the presence of water humidity in the atmosphere is found to decrease the temperature difference along the drop interface due to the heat of adsorption, absorption and/or that of condensation of water onto the ethanol drops. The control, i.e., enhancement or suppression, of these thermal patterns at the drop interface by means of ambient temperature and relative humidity is quantified and reported.

Growth of Graphene by Catalytic Dissociation of Ethylene on CuNi(111)

NASA Astrophysics Data System (ADS)

Tyagi, Parul; Mowll, Tyler; Robinson, Zachary; Ventrice, Carl

2013-03-01

Copper foil is one of the most common substrates for growing large area graphene films. The main reason for this is that Cu has a very low carbon solubility, which results in the self-termination of a single layer of graphene when grown using hydrocarbon precursors at low pressure. Our previous results on Cu(111) substrates has found that temperatures of at least 900 °C are needed to form single domain epitaxial films. By using a CuNi alloy, the catalytic activity of the substrate is expected to increase, which will allow the catalytic decomposition of the hydrocarbon precursor at lower temperatures. In this study, the growth of graphene by the catalytic decomposition of ethylene on a 90:10 CuNi(111) substrate was attempted. The growths were done in an ultra-high vacuum system by either heating the substrate to the growth temperature followed by introducing the ethylene precursor or by introducing the ethylene precursor and subsequently heating it to the growth temperature. The growth using the former method results in a two-domain epitaxial graphene overlayer. However, introducing the ethylene before heating the substrate resulted in considerable rotational disorder within the graphene film. This has been attributed to the deposition of carbon atoms on the surface at temperatures too low for the carbon to crystallize into graphene. This research was supported by the NSF (DMR-1006411).

Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

2004-12-01

Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

Wetting of TiC by Al-Cu alloys and interfacial characterization.

PubMed

Contreras, A

2007-07-01

The wetting behavior and the interfacial reactions that occurred between molten Al-Cu alloys (1, 4, 8, 20, 33, and 100 wt% Cu) and solid TiC substrates were studied by the sessile drop technique in the temperature range of 800-1130 degrees C. The effect of wetting behavior on the interfacial reaction layer was studied. All the Al-Cu alloys react with TiC at the interface forming an extensive reaction layer. The interface thickness varied with the samples, and depends on the temperature, chemical composition of the alloy and the time of the test. Wetting increases with increasing concentration of copper in the Al-Cu alloy at 800 and 900 degrees C. In contrast, at higher temperature such as 1000 degrees C wetting decreases with increasing copper content. The spreading kinetics and the work of adhesion were evaluated. The high values of activation energies indicated that spreading is not a simple viscosity controlled phenomenon but is a chemical reaction process. The spreading of the aluminum drop is observed to occur according to the formation of Al4C3, CuAl2O4, CuAl2, TiCux mainly, leading to a decreases in the contact angle. As the contact angle decreases the work of adhesion increases with increasing temperature. Al-Cu/TiC assemblies showed cohesive fracture corresponding to a strong interface. However, using pure Cu the adhesion work is poor, and the percentage of cohesion work is also too low (27-34%).

Development of a double-layered ceramic filter for aerosol filtration at high-temperatures: the filter collection efficiency.

PubMed

de Freitas, Normanda L; Gonçalves, José A S; Innocentini, Murilo D M; Coury, José R

2006-08-25

The performance of double-layered ceramic filters for aerosol filtration at high temperatures was evaluated in this work. The filtering structure was composed of two layers: a thin granular membrane deposited on a reticulate ceramic support of high porosity. The goal was to minimize the high pressure drop inherent of granular structures, without decreasing their high collection efficiency for small particles. The reticulate support was developed using the technique of ceramic replication of polyurethane foam substrates of 45 and 75 pores per inch (ppi). The filtering membrane was prepared by depositing a thin layer of granular alumina-clay paste on one face of the support. Filters had their permeability and fractional collection efficiency analyzed for filtration of an airborne suspension of phosphatic rock in temperatures ranging from ambient to 700 degrees C. Results revealed that collection efficiency decreased with gas temperature and was enhanced with filtration time. Also, the support layer influenced the collection efficiency: the 75 ppi support was more effective than the 45 ppi. Particle collection efficiency dropped considerably for particles below 2 microm in diameter. The maximum collection occurred for particle diameters of approximately 3 microm, and decreased again for diameters between 4 and 8 microm. Such trend was successfully represented by the proposed correlation, which is based on the classical mechanisms acting on particle collection. Inertial impaction seems to be the predominant collection mechanism, with particle bouncing/re-entrainment acting as detachment mechanisms.

Regional variation in the temperature sensitivity of soil organic matter decomposition in China's forests and grasslands

NASA Astrophysics Data System (ADS)

Liu, Yuan; He, Nianpeng

2017-04-01

How to assess the temperature sensitivity (Q10) of soil organic matter (SOM) decomposition and its regional variation with high accuracy is one of the largest uncertainties in determining the intensity and direction of the global carbon (C) cycle in response to climate change. In this study, we collected a series of soils from 22 forest sites and 30 grassland sites across China to explore regional variation in Q10 and its underlying mechanisms. We conducted a novel incubation experiment with periodically changing temperature (5-30 °C), while continuously measuring soil microbial respiration rates. The results showed that Q10 varied significantly across different ecosystems, ranging from 1.16 to 3.19 (mean 1.63). Q10 was ordered as follows: alpine grasslands (2.01) > temperate grasslands (1.81) > tropical forests (1.59) > temperate forests (1.55) > subtropical forests (1.52). The Q10 of grasslands (1.90) was significantly higher than that of forests (1.54). Furthermore, Q10 significantly increased with increasing altitude and decreased with increasing longitude. Environmental variables and substrate properties together explained 52% of total variation in Q10 across all sites. Overall, pH and soil electrical conductivity primarily explained spatial variation in Q10. The general negative relationships between Q10 and substrate quality among all ecosystem types supported the C quality temperature (CQT) hypothesis at a large scale, which indicated that soils with low quality should have higher temperature sensitivity. Furthermore, alpine grasslands, which had the highest Q10, were predicted to be more sensitive to climate change under the scenario of global warming.

Regional Variation in the Temperature Sensitivity of Soil Organic Matter Decomposition in China's Forests and Grasslands

NASA Astrophysics Data System (ADS)

Liu, Y.; He, N.; Zhu, J.; Yu, G.; Xu, L.; Niu, S.; Sun, X.; Wen, X.

2017-12-01

How to assess the temperature sensitivity (Q10) of soil organic matter (SOM) decomposition and its regional variation with high accuracy is one of the largest uncertainties in determining the intensity and direction of the global carbon (C) cycle in response to climate change. In this study, we collected a series of soils from 22 forest sites and 30 grassland sites across China to explore regional variation in Q10 and its underlying mechanisms. We conducted a novel incubation experiment with periodically changing temperature (5-30 °C), while continuously measuring soil microbial respiration rates. The results showed that Q10 varied significantly across different ecosystems, ranging from 1.16 to 3.19 (mean 1.63). Q10 was ordered as follows: alpine grasslands (2.01) > temperate grasslands (1.81) > tropical forests (1.59) > temperate forests (1.55) > subtropical forests (1.52). The Q10 of grasslands (1.90) was significantly higher than that of forests (1.54). Furthermore, Q10 significantly increased with increasing altitude and decreased with increasing longitude. Environmental variables and substrate properties together explained 52% of total variation in Q10 across all sites. Overall, pH and soil electrical conductivity primarily explained spatial variation in Q10. The general negative relationships between Q10 and substrate quality among all ecosystem types supported the C quality temperature (CQT) hypothesis at a large scale, which indicated that soils with low quality should have higher temperature sensitivity. Furthermore, alpine grasslands, which had the highest Q10, were predicted to be more sensitive to climate change under the scenario of global warming.

Facile fabrication of uniaxial nanopatterns on shape memory polymer substrates using a complete bottom-up approach

NASA Astrophysics Data System (ADS)

Chen, Zhongbi; Krishnaswamy, Sridhar

2014-03-01

In earlier work, we have demonstrated an assisted self-assembly fabrication method for unidirectional submicron patterns using pre-programmed shape memory polymers (SMP) as the substrate in an organic/inorganic bilayer structure. In this paper, we propose a complete bottom-up method for fabrication of uniaxial wrinkles whose wavelength is below 300 nm. The method starts with using the aforementioned self-assembled bi-layer wrinkled surface as the template to make a replica of surface wrinkles on a PDMS layer which is spin-coated on a pre-programmed SMP substrate. When the shape recovery of the substrate is triggered by heating it to its transition temperature, the substrate has been programmed in such a way that it shrinks uniaxially to return to its permanent shape. Consequently, the wrinkle wavelength on PDMS reduces accordingly. A subsequent contact molding process is carried out on the PDMS layer spin-coated on another pre-programmed SMP substrate, but using the wrinkled PDMS surface obtained in the previous step as the master. By activating the shape recovery of the substrate, the wrinkle wavelength is further reduced a second time in a similar fashion. Our experiments showed that the starting wavelength of 640 nm decreased to 290 nm after two cycles of recursive molding. We discuss the advantages and limitations of our recursive molding approach compared to the prevalent top-down fabrication methods represented by lithography. The present study is expected to o er a simple and cost-e ective fabrication method of nano-scale uniaxial wrinkle patterns with the potential for large-scale mass-production.

Photo-crystallization in a-Se layer structures: Effects of film-substrate interface-rigidity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lindberg, G. P.; Gross, N.; Weinstein, B. A.

Amorphous selenium (a-Se) films deposited on rigid substrates can undergo photo-induced crystallization (PC) even at temperatures (T) well below the glass transition, T{sub g} ∼ 313 K. Substrate-generated shear strain is known to promote the PC process. In the present work, we explore the influence of different substrates (Si and glass), and different film-layer-substrate combinations, on the PC in a variety of a-Se films and film-structures. The intermediate layers (indium tin oxide and polyimide) are chosen to promote conductivity and/or to be a buffer against interface strain in structures of interest for digital imaging applications. The PC characteristics in these samples are evaluatedmore » and compared using optical microscopy, atomic-force microscopy, Raman mapping, and T-dependent Raman spectroscopy. Both the presence of a soft intermediate layer, and the thermal softening that occurs for T increasing through T{sub g}, inhibit the tendency for the onset of PC. The extensive PC mapping results in the wide range of samples studied here, as well as the suppression of PC near T{sub g} in this array of samples, strongly support the generality of this behavior. As a consequence, one may expect that the stability of a-Se films against PC can be enhanced by decreasing the rigidity of the film-substrate interface. In this regard, advanced film structures that employ flexible substrates, soft intermediate layers, and/or are designed to be operated near T{sub g} should be explored.« less

Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

2014-10-01

The electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x =0-0.06) grown on α-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S | values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in a good linear relation with MI transition temperatures. |S| values of V1-xWxO2 films at T>TS were constant at low values of 23μVK-1 independently of x, which reflects a metallic electronic structure, whereas those at T

Experimental and Numerical Investigation on Micro-Bending of AISI 304 Sheet Metal Using a Low Power Nanosecond Laser

NASA Astrophysics Data System (ADS)

Paramasivan, K.; Das, Sandip; Marimuthu, Sundar; Misra, Dipten

2018-06-01

The aim of this experimental study is to identify and characterize the response related to the effects of process parameters in terms of bending angle for micro-bending of AISI 304 sheet using a low power Nd:YVO4 laser source. Numerical simulation is also carried out through a coupled thermo-mechanical formulation with finite element method using COMSOL MULTIPHYSICS. The developed numerical simulation indicates that bending is caused by temperature gradient mechanism in the present investigation involving laser micro-bending. The results of experiment indicate that bending angle increases with laser power, number of irradiations, and decreases with increase in scanning speed. Moreover, average bending angle increases with number of laser passes and edge effect, defined in terms of relative variation of bending angle (RBAV), decreases monotonically with the number of laser scans. The substrate is damaged over a width of about 80 μm due to the high temperatures experienced during laser forming at a low scanning speed.

Influence of deposition temperature on mechanical properties of plasma-sprayed hydroxyapatite coating on titanium alloy with ZrO2 intermediate layer

NASA Astrophysics Data System (ADS)

Chou, Bang-Yen; Chang, Edward

2003-06-01

Hydroxyapatite coatings were plasma sprayed on the Ti6A14V substrate with and without an intermediate ZrO2 layer; meanwhile the temperatures of substrates were varied at 90, 140, and 200 °C. The coatings were subjected to the standard adhesion test per ASTM C633-79. The purpose of the investigation was to study the effects of those processing variables on the bonding strength and failure behavior of the system. It is found that the bonding strengths of HA/ZrO2 and HA coatings generally decrease with increasing substrate temperature, except for the HA/ZrO2 coating deposited at 200 °C. The rationale of the results is attributed to the residual stress reported in the literature. Introducing ZrO2 bond coat is found to significantly promote the bonding strength of HA coating. The possible strengthening mechanism is the rougher surface of ZrO2 bond coat and the higher toughness of ZrO2, which provide the mechanical strengthening effects. The slightly denser HA in 200 °C deposited HA coating cannot explain the high bonding strength of the HA/ZrO2 coating, nor the mechanical strengthening effect of ZrO2 intermediate layer should apply. It is believed that a stronger diffusion bonding is formed at the interface of HA and ZrO2, which increases the bonding between them chemically. The bonding strengths of HA/ZrO2 and HA coatings are correlated with the area fraction of adhesive failure of the coatings. The correlation explains the findings in this study.

Mobility restrictions and glass transition behaviour of an epoxy resin under confinement.

PubMed

Djemour, A; Sanctuary, R; Baller, J

2015-04-07

Confinement can have a big influence on the dynamics of glass formers in the vicinity of the glass transition. Already 40 to 50 K above the glass transition temperature, thermal equilibration of glass formers can be strongly influenced by the confining substrate. We investigate the linear thermal expansion and the specific heat capacity cp of an epoxy resin (diglycidyl ether of bisphenol A, DGEBA) in a temperature interval of 120 K around the glass transition temperature. The epoxy resin is filled into controlled pore glasses with pore diameters between 4 and 111 nm. Since DGEBA can form H-bonds with silica surfaces, we also investigate the influence of surface silanization of the porous substrates. In untreated substrates a core/shell structure of the epoxy resin can be identified. The glass transition behaviours of the bulk phase and that of the shell phase are different. In silanized substrates, the shell phase disappears. At a temperature well above the glass transition, a second transition is found for the bulk phase - both in the linear expansion data as well as in the specific heat capacity. The cp data do not allow excluding the glass transition of a third phase as being the cause for this transition, whereas the linear expansion data do so. The additional transition temperature is interpreted as a separation between two regimes: above this temperature, macroscopic flow of the bulk phase inside the porous structure is possible to balance the mismatch of thermal expansion coefficients between DGEBA and the substrate. Below the transition temperature, this degree of freedom is hindered by geometrical constraints of the porous substrates. Moreover, this second transition could also be found in the linear expansion data of the shell phase.

Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

NASA Astrophysics Data System (ADS)

García, S.; Íñiguez-de-la-Torre, I.; Mateos, J.; González, T.; Pérez, S.

2016-06-01

In this paper, we present results from the simulations of a submicrometer AlGaN/GaN high-electron-mobility transistor (HEMT) by using an in-house electro-thermal Monte Carlo simulator. We study the temperature distribution and the influence of heating on the transfer characteristics and the transconductance when the device is grown on different substrates (sapphire, silicon, silicon carbide and diamond). The effect of the inclusion of a thermal boundary resistance (TBR) is also investigated. It is found that, as expected, HEMTs fabricated on substrates with high thermal conductivities (diamond) exhibit lower temperatures, but the difference between hot-spot and average temperatures is higher. In addition, devices fabricated on substrates with higher thermal conductivities are more sensitive to the value of the TBR because the temperature discontinuity is greater in the TBR layer.

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

PubMed Central

Li, Huijie; Zhao, Guijuan; Wang, Lianshan; Chen, Zhen; Yang, Shaoyan

2016-01-01

Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials. PMID:28335323

Multi-wavelength emissivity measurement of stainless steel substrate

NASA Astrophysics Data System (ADS)

Zhang, Y. F. F.; Dai, J. M. M.; Zhang, L.; Pan, W. D. D.

2013-01-01

The emissivity is a key parameter to measure the surface temperature of materials in the radiation thermometry. In this paper, the surface emissivity of metallic substrates is measured by the multi-wavelength emissivity measurement apparatus developed by the Harbin Institute of Technology (HIT). The measuring principle of this apparatus is based on the energy comparison. Several radiation thermometers, whose emissivity coefficients corrected by the measured emissivity from this apparatus, are used to measure the surface temperature of stainless steel substrates. The temperature values measured by means of radiation thermometry are compared to those measured by means of contact thermometry. The relative error between the two means is less than 2% at temperatures from 700K to 1300K, it suggests that the emissivity of stainless steel substrate measured by the multi-wavelength emissivity measurement apparatus are accurate and reliable. Emissivity measurements performed with this apparatus present an uncertainty of 5.9% (cover factor=2).

Coupling of microphase separation and dewetting in weakly segregated diblock co-polymer ultrathin films.

PubMed

Yan, Derong; Huang, Haiying; He, Tianbai; Zhang, Fajun

2011-10-04

We have studied the coupling behavior of microphase separation and autophobic dewetting in weakly segregated poly(ε-caprolactone)-block-poly(L-lactide) (PCL-b-PLLA) diblock co-polymer ultrathin films on carbon-coated mica substrates. At temperatures higher than the melting point of the PLLA block, the co-polymer forms a lamellar structure in bulk with a long period of L ∼ 20 nm, as determined using small-angle X-ray scattering. The relaxation procedure of ultrathin films with an initial film thickness of h = 10 nm during annealing has been followed by atomic force microscopy (AFM). In the experimental temperature range (100-140 °C), the co-polymer dewets to an ultrathin film of itself at about 5 nm because of the strong attraction of both blocks with the substrate. Moreover, the dewetting velocity increases with decreasing annealing temperatures. This novel dewetting kinetics can be explained by a competition effect of the composition fluctuation driven by the microphase separation with the dominated dewetting process during the early stage of the annealing process. While dewetting dominates the relaxation procedure and leads to the rupture of the ultrathin films, the composition fluctuation induced by the microphase separation attempts to stabilize them because of the matching of h to the long period (h ∼ 1/2L). The temperature dependence of these two processes leads to this novel relaxation kinetics of co-polymer thin films. © 2011 American Chemical Society

Nonthermal ice nucleation observed at distorted contact lines of supercooled water drops

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Fan; Cruikshank, Owen; He, Weilue

Ice nucleation is the crucial step for ice formation in atmospheric clouds and therefore underlies climatologically relevant precipitation and radiative properties. Some progress has been made in understanding the roles of temperature, supersaturation, and material properties, but an explanation for the efficient ice nucleation occurring when a particle contacts a supercooled water drop has been elusive for over half a century. Here, we explore ice nucleation initiated at constant temperature and observe that mechanical agitation induces freezing of supercooled water drops at distorted contact lines. Results show that symmetric motion of supercooled water on a vertically oscillating substrate does notmore » freeze, no matter how we agitate it. However, when the moving contact line is distorted with the help of trace amounts of oil or inhomogeneous pinning on the substrate, freezing can occur at temperatures much higher than in a static droplet, equivalent to ~1010 increase in nucleation rate. Several possible mechanisms are proposed to explain the observations. One plausible explanation among them, decreased pressure due to interface curvature, is explored theoretically and compared with the observational results quasiquantitatively. Indeed, the observed freezing-temperature increase scales with contact line speed in a manner consistent with the pressure hypothesis. Whatever the mechanism, the experiments demonstrate a strong preference for ice nucleation at three-phase contact lines compared to the two-phase interface, and they also show that movement and distortion of the contact line are necessary contributions to stimulating the nucleation process.« less

Nonthermal ice nucleation observed at distorted contact lines of supercooled water drops

DOE PAGES

Yang, Fan; Cruikshank, Owen; He, Weilue; ...

2018-02-06

Ice nucleation is the crucial step for ice formation in atmospheric clouds and therefore underlies climatologically relevant precipitation and radiative properties. Some progress has been made in understanding the roles of temperature, supersaturation, and material properties, but an explanation for the efficient ice nucleation occurring when a particle contacts a supercooled water drop has been elusive for over half a century. Here, we explore ice nucleation initiated at constant temperature and observe that mechanical agitation induces freezing of supercooled water drops at distorted contact lines. Results show that symmetric motion of supercooled water on a vertically oscillating substrate does notmore » freeze, no matter how we agitate it. However, when the moving contact line is distorted with the help of trace amounts of oil or inhomogeneous pinning on the substrate, freezing can occur at temperatures much higher than in a static droplet, equivalent to ~1010 increase in nucleation rate. Several possible mechanisms are proposed to explain the observations. One plausible explanation among them, decreased pressure due to interface curvature, is explored theoretically and compared with the observational results quasiquantitatively. Indeed, the observed freezing-temperature increase scales with contact line speed in a manner consistent with the pressure hypothesis. Whatever the mechanism, the experiments demonstrate a strong preference for ice nucleation at three-phase contact lines compared to the two-phase interface, and they also show that movement and distortion of the contact line are necessary contributions to stimulating the nucleation process.« less