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Sample records for deep impurity levels

  1. Theoretical Studies of Deep Impurity Levels in Ternary Semiconductor Alloys.

    DTIC Science & Technology

    2014-09-26

    degradation’ We have proposed a mechanism of Ill-V rapid laser degradation (Fig. 3) and a means of inhibiting the mechanism [127]. We have proposed...that dangling bonds form self-reproducing non-radiative killer centers that assist the * "growth of dislocations. The degradation mechanism can be...scattering by defects is not the dominant scattering mechanism , and the central-cell scattering limits the mobility. D. ressure dependence of deep levels

  2. The origin of deep-level impurity transitions in hexagonal boron nitride

    SciTech Connect

    Du, X. Z.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2015-01-12

    Deep ultraviolet photoluminescence (PL) emission spectroscopy has been employed to investigate the origin of the widely observed deep level impurity related donor-acceptor pair (DAP) transition with an emission peak near 4.1 eV in hexagonal boron nitride (h-BN). A set of h-BN epilayers were grown by metal-organic chemical vapor deposition (MOCVD) under different ammonia (NH{sub 3}) flow rates to explore the role of nitrogen vacancies (V{sub N}) in the deep-level transitions. The emission intensity of the DAP transition near 4.1 eV was found to decrease exponentially with an increase of the NH{sub 3} flow rate employed during the MOCVD growth, implying that impurities involved are V{sub N}. The temperature-dependent PL spectra were measured from 10 K up to 800 K, which provided activation energies of ∼0.1 eV for the shallow impurity. Based on the measured energy level of the shallow impurity (∼0.1 eV) and previously estimated bandgap value of about 6.5 eV for h-BN, we deduce a value of ∼2.3 eV for the deep impurity involved in this DAP transition. The measured energy levels together with calculation results and formation energies of the impurities and defects in h-BN suggest that V{sub N} and carbon impurities occupying the nitrogen sites, respectively, are the most probable shallow donor and deep acceptor impurities involved in this DAP transition.

  3. Titanium in silicon as a deep level impurity

    NASA Technical Reports Server (NTRS)

    Chen, J.-W.; Milnes, A. G.; Rohatgi, A.

    1979-01-01

    Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 x 10 to the 14th per cu cm. It is reported that Hall measurements after diffusion show conversion of lightly doped p-type Si to n-type due to a Ti donor level at E sub c -0.22 eV. In addition, in DLTS measurements of n(+)p structures this level shows as an electron (minority carrier) trap at E sub c -0.26 eV with an electron capture cross section of about 3 x 10 to the -15th per sq cm at 300 K. Finally, a Ti electrically active concentration of about 1.35 x 10 to the 13th per cu cm in p type Si results in a minority carrier (electron) lifetime of 50 nsec at 300 K.

  4. Resonant and deep impurity levels under hydrostatic pressure in pure n-type InAs

    NASA Astrophysics Data System (ADS)

    Kadri, A.; Aulombard, R. L.; Zitouni, K.; Konczewicz, L.

    1986-05-01

    Hall coefficient ( RH) and electrical resistivity (ϱ 0) were measured as a function of hydrostatic pressure up to 18 kbar, in the 4.2 K-120 K temperature range, on nominally undopted n-type InAs with free carrier concentration ∼2 × 10 16 cm -3. In the 4.2-30 K range, RH and ϱ 0 versus pressure variations indicate the deionization of impurity states which are resonant in the Γ 1c band at normal pressure. The position and the pressure variation of the resonant impurity level are discussed. At T>30 K, evidence is made for the existence of a donor-like impurity level lying ∼10 meV below the Γ 1c band minimum and moving with pressure at the rate of -1.8 meV/kbar with respect to this band.

  5. Impurity-induced deep centers in Tl6SI4

    DOE PAGES

    Shi, Hongliang; Lin, Wenwen; Kanatzidis, Mercouri G.; ...

    2017-04-13

    Tl6SI4 is a promising material for room-temperature semiconductor radiation detection applications. The history of the development of semiconductor radiation detection materials has demonstrated that impurities strongly affect the carrier transport and that material purification is a critically important step in improving the carrier transport and thereby the detector performance. Here, we report combined experimental and theoretical studies of impurities in Tl6SI4. Impurity concentrations in Tl6SI4 were analyzed by glow discharge mass spectrometry. Purification of the raw material by multi-pass vertical narrow zone refining was found to be effective in reducing the concentrations of most impurities. Density functional theory calculations weremore » also performed to study the trapping levels introduced by the main impurities detected in experiments. We show that, among dozens of detected impurities, most are either electrically inactive or shallow. In the purified Tl6SI4 sample, only Bi has a significant concentration (0.2 ppm wt) and introduces deep electron trapping levels in the band gap. Lastly, improvement of the purification processes is expected to further reduce the impurity concentrations and their impact on carrier transport in Tl6SI4, leading to improved detector performance.« less

  6. Impurity-induced deep centers in Tl6SI4

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Lin, Wenwen; Kanatzidis, Mercouri G.; Szeles, Csaba; Du, Mao-Hua

    2017-04-01

    Tl6SI4 is a promising material for room-temperature semiconductor radiation detection applications. The history of the development of semiconductor radiation detection materials has demonstrated that impurities strongly affect the carrier transport and that material purification is a critically important step in improving the carrier transport and thereby the detector performance. Here, we report combined experimental and theoretical studies of impurities in Tl6SI4. Impurity concentrations in Tl6SI4 were analyzed by glow discharge mass spectrometry. Purification of the raw material by multi-pass vertical narrow zone refining was found to be effective in reducing the concentrations of most impurities. Density functional theory calculations were also performed to study the trapping levels introduced by the main impurities detected in experiments. We show that, among dozens of detected impurities, most are either electrically inactive or shallow. In the purified Tl6SI4 sample, only Bi has a significant concentration (0.2 ppm wt) and introduces deep electron trapping levels in the band gap. Improvement of the purification processes is expected to further reduce the impurity concentrations and their impact on carrier transport in Tl6SI4, leading to improved detector performance.

  7. Energy levels of isoelectronic impurities by large scale LDA calculations

    SciTech Connect

    Li, Jingbo; Wang, Lin-Wang

    2002-11-22

    Isoelectronic impurity states are localized states induced by stoichiometric single atom substitution in bulk semiconductor. Photoluminescence spectra indicate deep impurity levels of 0.5 to 0.9eV above the top of valence band for systems like: GaN:As, GaN:P, CdS:Te, ZnS:Te. Previous calculations based on small supercells seemingly confirmed these experimental results. However, the current ab initio calculations based on thousand atom supercells indicate that the impurity levels of the above systems are actually much shallower(0.04 to 0.23 eV), and these impurity levels should be compared with photoluminescence excitation spectra, not photoluminescence spectra.

  8. Deep impurity trapping concepts for power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1982-01-01

    High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

  9. Double-injection, deep-impurity switch development

    NASA Technical Reports Server (NTRS)

    Selim, F. A.; Whitson, D. W.

    1983-01-01

    The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

  10. A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS)

    NASA Astrophysics Data System (ADS)

    Nyamhere, Cloud; Auret, F. D.; Das, A. G. M.; Chawanda, A.

    2007-12-01

    We have measured the electrical characteristics of electron irradiation-induced defects in n-type (1 1 0), (1 1 1) and (1 0 0) germanium doped with antimony (Sb) by deep-level transient spectroscopy (DLTS) and Laplace-DLTS. The following electron traps at 0.04, 0.15, 0.20, 0.21, 0.23, 0.31 and 0.38 eV below the conduction band were observed and two hole traps at 0.09 and 0.30 eV above the valence band were recorded in the low doping (10 14 cm -3) samples. In the higher doping (10 15 cm -3) samples, similar electron traps were observed but the electron trap at 0.04 eV below the conduction band and hole trap at 0.09 eV above the valence band was not observed. The electron trap at 0.38 eV is identified as the (V-Sb) --/- center and the hole trap at 0.30 eV assigned the (V-Sb) 0/- appeared in almost equal concentrations in the higher-doped samples but in the lowest-doped samples the hole trap (V-Sb) 0/- was more dominant. We have also presented the annealing behavior of these electron-induced defects.

  11. Double-injection, deep-impurity switch development

    NASA Technical Reports Server (NTRS)

    Whitson, D. W.

    1985-01-01

    The overall objective of this program was the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI) sup 2 silicon switch that operates in the 2-10 kV range with conduction current values of 5 A at 2 kV and 1 A at 10 kV. Other major specifications include a holding voltage of 10 V with no gate current, 10 microsec switching time, and power dissipation of 50 W at 75 C. It was decided to concentrate on the lateral circular devices in order to optimize the gold diffusion. This resulted in devices that are much better switches (approx.1 micro sec switching time), and in a gold diffusion process that is much more controllable than those previously developed. Some results with injection-gated devices were also obtained. The current conduction for V less than VT was analyzed and seen to agree, for the most part, with Lampert's theory. Various sections of this report describe the device designs, wafer-processing techniques, and various measurements which include ac and dc characteristics and four-point probe.

  12. Advanced development of double-injection, deep-impurity semiconductor switches

    NASA Technical Reports Server (NTRS)

    Hanes, M. H.

    1987-01-01

    Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

  13. Metal impurities in crystallographic voids of beta-rhombohedral boron lattice: Binding energies and electron levels

    NASA Astrophysics Data System (ADS)

    Chkhartishvili, Levan; Murusidze, Ivane; Darchiashvili, Maguli; Tsagareishvili, Otar; Gabunia, Domenti

    2012-11-01

    Applying quasi-classical approach, the binding energies and electron levels of metal impurities (Li, Mg, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Hf, Ta, and Re) introduced into crystallographic voids of types A, D and E in the beta-rhombohedral boron lattice are calculated. Binding energies are estimated as ˜1 eV-60 eV per bond. The most of the obtained metal-boron bond lengths are very close to the mean radii of voids in the undoped crystal. Relatively light impurities (from Li to Cu) are found to form donor electron states directly inside the conduction band, i.e., they cause metallization of the material being introduced at sufficiently high concentrations. Heavy impurities (from Zr to Re) form shallow or deep donor levels inside the band gap or even valence band depending on dopants and voids of accommodation.

  14. Temperature and pressure coefficients of iron resonant impurity level in PbTe

    NASA Astrophysics Data System (ADS)

    Skipetrov, E. P.; Kruleveckaya, O. V.; Skipetrova, L. A.; Slynko, V. E.

    2017-01-01

    We investigate temperature dependences of galvanomagnetic parameters in weak magnetic fields (4.2 ≤ T ≤ 300 K, B ≤ 0.07 T) in the p-Pb1-yFeyTe alloy from the middle part of the single-crystal ingot, where the Fermi level is pinned by the resonant impurity level lying under the top of the valence band. Experiments are performed under hydrostatic compression up to 10 kbar. Using scanning electron microscopy, we find microscopic inclusions of the secondary phase enriched with iron and show that the main phase is characterized by a good uniformity of the spatial distribution of impurities. A monotonous increase of the free hole concentration at liquid-helium temperature under pressure and anomalous temperature dependences of the Hall coefficient in the whole investigated pressure range are revealed. Experimental results are explained by a model assuming pinning of the Fermi level by the impurity level and a redistribution of electrons between the valence band and impurity states with increasing temperature and under pressure. In the framework of the two-band Kane dispersion law, theoretical temperature dependences of the Hall coefficient under pressure, which are in satisfactory agreement with the experimental ones at low temperatures, are calculated and temperature and pressure coefficients of the iron deep level are determined. Diagrams of the electronic structure rearrangement with increasing temperature for Pb1-yFeyTe at pressures up to 10 kbar are proposed.

  15. Impurity levels, impurity bands, excited impurity bands, and band tails: The electronic density of states in quantum wells and heterostructures

    NASA Astrophysics Data System (ADS)

    Serre, J.; Ghazali, A.; Gold, A.

    1989-04-01

    We have investigated in quantum wells (QW's) and heterostructures (HS's) the modification of the electronic structure near the band edge, which is induced by selective doping. The density of states has been calculated as a function of the relevant parameters, namely, carrier and impurity concentrations (and depletion concentrations for HS's), QW width, and impurity position. Using a multiple-scattering method which includes a finite-range screened potential and impurity concentration to all orders, we have succeeded in obtaining ground-state and excited-state impurity bands (IB's). We observed these bands merging gradually with the lowest conduction subband as the impurity concentration is increased, leading to the formation of a band tail into the energy gap. Other main results obtained for different values of the parameters are the binding energy for a single impurity, the widths and energy shifts of ground- and excited-state IB's, and the contribution of the electron-impurity interaction to the gap shrinkage in the band-tail regime. Our results are compared with experiments and other theories.

  16. Multi-level Algorithm for the Anderson Impurity Model

    NASA Astrophysics Data System (ADS)

    Chandrasekharan, S.; Yoo, J.; Baranger, H. U.

    2004-03-01

    We develop a new quantum Monte Carlo algorithm to solve the Anderson impurity model. Instead of integrating out the Fermions, we work in the Fermion occupation number basis and thus have direct access to the Fermionic physics. The sign problem that arises in this formulation can be solved by a multi-level technique developed by Luscher and Weisz in the context of lattice QCD [JHEP, 0109 (2001) 010]. We use the directed-loop algorithm to update the degrees of freedom. Further, this algorithm allows us to work directly in the Euclidean time continuum limit for arbitrary values of the interaction strength thus avoiding time discretization errors. We present results for the impurity susceptibility and the properties of the screening cloud obtained using the algorithm.

  17. Deep levels of copper in silicon

    NASA Astrophysics Data System (ADS)

    Brotherton, S. D.; Ayres, J. R.; Gill, A.; van Kesteren, H. W.; Greidanus, F. J. A. M.

    1987-09-01

    Defect impurity levels have been examined in copper-diffused p-and n-type silicon using deep level transient spectroscopy. Levels at Ev+0.09, Ev+0.23, and Ev+0.42 eV have been observed in both types of material, although the deeper levels were only oberved in n-type material after post-diffusion annealing at 200 °C. Associated with the appearance of these levels in n-type material was another level at Ec-0.16 eV. This may be a further charge state of the center responsible for the Ev+0.23 eV and Ev+0.42 eV levels or the two centers may be decomposition products of a thermally unstable complex. Luminescence measurements have revealed the previously reported Cu-Cu spectrum in all the copper-diffused samples. The occurrence of this signal could not be correlated with the presence of the levels at Ev+0.23, Ev+0.42, or Ec-0.16 eV; this leaves the center at Ev+0.09 eV as the likely origin of the signal.

  18. Screening charged impurities and lifting the orbital degeneracy in graphene by populating Landau levels.

    PubMed

    Luican-Mayer, Adina; Kharitonov, Maxim; Li, Guohong; Lu, Chih-Pin; Skachko, Ivan; Gonçalves, Alem-Mar B; Watanabe, K; Taniguchi, T; Andrei, Eva Y

    2014-01-24

    We report the observation of an isolated charged impurity in graphene and present direct evidence of the close connection between the screening properties of a 2D electron system and the influence of the impurity on its electronic environment. Using scanning tunneling microscopy and Landau level spectroscopy, we demonstrate that in the presence of a magnetic field the strength of the impurity can be tuned by controlling the occupation of Landau-level states with a gate voltage. At low occupation the impurity is screened, becoming essentially invisible. Screening diminishes as states are filled until, for fully occupied Landau levels, the unscreened impurity significantly perturbs the spectrum in its vicinity. In this regime we report the first observation of Landau-level splitting into discrete states due to lifting the orbital degeneracy.

  19. Coulomb impurity effects on the zero-Landau level splitting of graphene on polar substrates

    NASA Astrophysics Data System (ADS)

    Xiao, Yao; Li, Wei-Ping; Li, Zhi-Qing; Wang, Zi-Wu

    2017-04-01

    We theoretically investigate the effects of the Coulomb impurity on the zero-Landau level splitting of graphene on different polar substrates basing on the Fröhlich polaron model, in which the polaron is formed due to the carriers-surface optical phonon coupling. We discuss the influence of Coulomb impurity on the zero-Landau level splitting in the case of weak and strong coupling limits. We find that the splitting energy can be varied in a large scale due to the Coulomb impurity, which provides the possible theoretical explanation for the experimental measurements regarding the energy gap opened and zero-Landau level splitting in Landau quantized graphene.

  20. Density of states of the one-dimensional electron gas: Impurity levels, impurity bands, and the band tail

    NASA Astrophysics Data System (ADS)

    Gold, A.; Ghazali, A.

    1994-06-01

    The density of states of cylindrical quantum wires is calculated in the presence of charged impurities located in the center of the wire. A multiple-scattering approach (Klauder's fifth approximation), which represents a self-consistent t-matrix approximation, is used. For small impurity densities and in the weak screening limit the ground-state impurity band and four excited-state impurity bands are obtained within our approach. We find good agreement between the numerically obtained spectral densities with the corresponding analytical spectral densities calculated with the single-impurity wave functions. The merging of impurity bands is studied. For large impurity densities we obtain a band tail. We present an analytical expression for the disorder-induced renormalized band-edge energy in the band-tail regime.

  1. Purification of Recovered Helium with Low level of Impurities: Evaluation of Two Different Methods

    NASA Astrophysics Data System (ADS)

    Lozano, M. P.; Gabal, M.; Sesé, J.; Pina, M. P.; Rillo, C.

    Helium gas coming from low temperature experimental systems is recovered to avoid losses of this scarce gas on Earth. Once this helium gas has been recovered and before its liquefaction, the impurities contained should be removed. It is possible to achieve a low level of impurities by using the proper materials and procedures on the road to helium recovery. A comparison of two different methods applied for the purification of recovered helium with low level of impurities is reported in this paper. One method is the use of liquid nitrogen traps and the other one is the application of a purification system based on getter materials. The cleaning efficiency has been probed experimentally for both methods through the analysis of the purified He gas. The evaluation covers the life time between regenerations, the everyday care as well as the long term, the energy consumption, the initial investment besides the cost of maintenance of both methods.

  2. Cryogenic Laser Calorimetry for Impurity Analysis

    NASA Technical Reports Server (NTRS)

    Swimm, R. T.

    1985-01-01

    The results of a one-year effort to determine the applicability of laser-calorimetric spectroscopy to the study of deep-level impurities in silicon are presented. Critical considerations for impurity analysis by laser-calorimetric spectroscopy are discussed, the design and performance of a cryogenic laser calorimeter is described, and measurements of background absorption in high-purity silicon are presented.

  3. Impurity levels and power loading in the PDX tokamak with high power neutral beam injection

    SciTech Connect

    Fonck, R.J.; Bell, M.; Bol, K.

    1982-10-01

    The PDX tokamak provides an experimental facility for the direct comparison of various impurity control techniques under reactor-like conditions. Four neutral beam lines can inject up to 6 MW for 300 ms. Carbon rail limiter discharges have been used to test the effectiveness of perpendicular injection, but non-disruptive full power operation for > 100 ms is difficult without extensive conditioning. Initial tests of a toroidal bumper limiter indicate reduced power loading and roughly similar impurity levels compared to the carbon rail limiter discharges. Poloidal divertor discharges with up to 5 MW of injected power are cleaner than similar circular discharges, and the power is deposited in a remote divertor chamber. High density divertor operation indicates a reduction of impurity flow velocity in the divertor and enhanced recycling in the divertor region during neutral injection.

  4. Impurities in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.

    1985-01-01

    Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

  5. Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Campbell, R. B.; Blais, P. D.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

    1980-01-01

    Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

  6. Pressure studies of deep levels in semiconductors

    SciTech Connect

    Samara, G.A.

    1989-01-01

    The effects of pressure on the energetics and kinetics of electron emission and capture processes by several important deep levels in Si are discussed. The results yield the first quantitative measures of the breathing mode lattice relaxations accompanying these processes. 2 refs., 1 fig.

  7. DETECTING LOW-LEVEL SYNTHESIS IMPURITIES IN MODIFIED PHOSPHOROTHIOATE OLIGONUCLEOTIDES USING LIQUID CHROMATOGRAPHY - HIGH RESOLUTION MASS SPECTROMETRY.

    PubMed

    Nikcevic, Irena; Wyrzykiewicz, Tadeusz K; Limbach, Patrick A

    2011-07-01

    An LC-MS method based on the use of high resolution Fourier transform ion cyclotron resonance mass spectrometry (FTIRCMS) for profiling oligonucleotides synthesis impurities is described.Oligonucleotide phosphorothioatediesters (phosphorothioate oligonucleotides), in which one of the non-bridging oxygen atoms at each phosphorus center is replaced by a sulfur atom, are now one of the most popular oligonucleotide modifications due to their ease of chemical synthesis and advantageous pharmacokinetic properties. Despite significant progress in the solid-phase oligomerization chemistry used in the manufacturing of these oligonucleotides, multiple classes of low-level impurities always accompany synthetic oligonucleotides. Liquid chromatography-mass spectrometry has emerged as a powerful technique for the identification of these synthesis impurities. However, impurity profiling, where the entire complement of low-level synthetic impurities is identified in a single analysis, is more challenging. Here we present an LC-MS method based the use of high resolution-mass spectrometry, specifically Fourier transform ion cyclotron resonance mass spectrometry (FTIRCMS or FTMS). The optimal LC-FTMS conditions, including the stationary phase and mobile phases for the separation and identification of phosphorothioate oligonucleotides, were found. The characteristics of FTMS enable charge state determination from single m/z values of low-level impurities. Charge state information then enables more accurate modeling of the detected isotopic distribution for identification of the chemical composition of the detected impurity. Using this approach, a number of phosphorothioate impurities can be detected by LC-FTMS including failure sequences carrying 3'-terminal phosphate monoester and 3'-terminal phosphorothioate monoester, incomplete backbone sulfurization and desulfurization products, high molecular weight impurities, and chloral, isobutyryl, and N(3) (2-cyanoethyl) adducts of the full

  8. DETECTING LOW-LEVEL SYNTHESIS IMPURITIES IN MODIFIED PHOSPHOROTHIOATE OLIGONUCLEOTIDES USING LIQUID CHROMATOGRAPHY – HIGH RESOLUTION MASS SPECTROMETRY

    PubMed Central

    Nikcevic, Irena; Wyrzykiewicz, Tadeusz K.; Limbach, Patrick A.

    2010-01-01

    Summary An LC-MS method based on the use of high resolution Fourier transform ion cyclotron resonance mass spectrometry (FTIRCMS) for profiling oligonucleotides synthesis impurities is described. Oligonucleotide phosphorothioatediesters (phosphorothioate oligonucleotides), in which one of the non-bridging oxygen atoms at each phosphorus center is replaced by a sulfur atom, are now one of the most popular oligonucleotide modifications due to their ease of chemical synthesis and advantageous pharmacokinetic properties. Despite significant progress in the solid-phase oligomerization chemistry used in the manufacturing of these oligonucleotides, multiple classes of low-level impurities always accompany synthetic oligonucleotides. Liquid chromatography-mass spectrometry has emerged as a powerful technique for the identification of these synthesis impurities. However, impurity profiling, where the entire complement of low-level synthetic impurities is identified in a single analysis, is more challenging. Here we present an LC-MS method based the use of high resolution-mass spectrometry, specifically Fourier transform ion cyclotron resonance mass spectrometry (FTIRCMS or FTMS). The optimal LC-FTMS conditions, including the stationary phase and mobile phases for the separation and identification of phosphorothioate oligonucleotides, were found. The characteristics of FTMS enable charge state determination from single m/z values of low-level impurities. Charge state information then enables more accurate modeling of the detected isotopic distribution for identification of the chemical composition of the detected impurity. Using this approach, a number of phosphorothioate impurities can be detected by LC-FTMS including failure sequences carrying 3′-terminal phosphate monoester and 3′-terminal phosphorothioate monoester, incomplete backbone sulfurization and desulfurization products, high molecular weight impurities, and chloral, isobutyryl, and N3 (2-cyanoethyl) adducts

  9. The effect of shallow vs. deep level doping on the performance of thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Song, Qichen; Zhou, Jiawei; Meroueh, Laureen; Broido, David; Ren, Zhifeng; Chen, Gang

    2016-12-01

    It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric materials doped with shallow levels may experience a dramatic reduction in their figures of merit at high temperatures due to the excitation of minority carriers that reduces the Seebeck coefficient and increases bipolar heat conduction. Doping with deep level impurities can delay the excitation of minority carriers as it requires a higher temperature to ionize all dopants. We find through modeling that, depending on the material type and temperature range of operation, different impurity levels (shallow or deep) will be desired to optimize the efficiency of a thermoelectric material. For different materials, we further clarify where the most preferable position of the impurity level within the bandgap falls. Our research provides insight on why different dopants often affect thermoelectric transport properties differently and directions in searching for the most appropriate dopants for a thermoelectric material in order to maximize the device efficiency.

  10. Impurity activation and surface γ-dose levels in first wall structural materials

    NASA Astrophysics Data System (ADS)

    Giancarli, Luciano

    1986-05-01

    Research in the field of low-activity structural materials for the first wall and blanket of nuclear fusion reactors has assumed much importance in the last few years. In this study the effects of the presence of low concentrations of unintended impurities among the basic components of low-activation materials on their long term activation and dose rate levels have been investigated. A new library of neutron cross-sections has been generated with the THRES-F code for all those elements that are not traditional components of structural materials. The contribution of 1 ppm of each possible impurity element to the long term activity and γ-dose rate of a structural material has subsequently been determined with the aid of a modified version of the ORIGEN code.

  11. Deep levels in silicon-oxygen superlattices

    NASA Astrophysics Data System (ADS)

    Simoen, E.; Jayachandran, S.; Delabie, A.; Caymax, M.; Heyns, M.

    2016-02-01

    This work reports on the deep levels observed in Pt/Al2O3/p-type Si metal-oxide-semiconductor capacitors containing a silicon-oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance-Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO2 interface has been observed as well.

  12. Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

    NASA Astrophysics Data System (ADS)

    Barseghyan, M. G.

    2016-11-01

    The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

  13. Breathing mode lattice relaxation associated with carrier emission and capture by deep electronic levels in silicon

    SciTech Connect

    Samara, G.A.

    1987-01-01

    The breathing mode (volume) lattice relaxations associated with carrier emission and capture are evaluated for a variety of deep levels in silicon using a recently proposed method based on high pressure measurement of the emission rates and capture cross sections. Included are (1) the vacancy-like acceptor levels associated with the oxygen-vacancy pair (or A-center) and the gold, platinum and palladium impurities, (2) the chalcogenide donors in their singly- and doubly-charged states and (3) a number of 3d transition metal donors. The signs and magnitudes (which range from approx.0 to 5A/sup 3//emitted carrier) of these relaxations are discussed in terms of models for the impurities and defects responsible for the associated levels. The results on the chalcogenides are compared with recent theoretical calculations. 8 refs., 1 tab.

  14. Numerical modeling of the effect of the level of nitrogen impurities in a helium parallel plate dielectric barrier discharge

    NASA Astrophysics Data System (ADS)

    Lazarou, C.; Koukounis, D.; Chiper, A. S.; Costin, C.; Topala, I.; Georghiou, G. E.

    2015-06-01

    In this paper a validated 2D axisymmetric plasma fluid model was used to study the influence of the level of nitrogen impurities on the processes that occur in a helium parallel plate dielectric barrier discharge. The level of nitrogen impurities was varied in the range 0.1-500 ppm. It was observed that the nitrogen impurities significantly affect the dominant ion species at breakdown and the discharge characteristics. Specifically, three different dominant ions were found, which are strongly dependent on the level of nitrogen impurities. These are: \\text{He}2+ (0.1-35 ppm), \\text{N}2+ (35-150 ppm) and \\text{N}4+ (150-500 ppm). In addition, the results show that the discharge characteristics are dependent on the dominant ion species at breakdown.

  15. Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon

    SciTech Connect

    Samara, G. A.

    1989-05-15

    The breathing-mode (volume) lattice relaxations associated with carrier emission and capture by a variety of deep electronic levels in silicon are evaluated from high-pressure measurements of the emission rates and capture cross sections. Included are (1) the vacancylike acceptor levels associated with the oxygen-vacancy pair (or /ital A/ center) and the gold, platinum, and palladium impurities, (2) the chalcogenide donors in their singly and doubly charged states, (3) a number of 3/ital d/ transition-metal donors, and (4) the phosphorus-vacancy pair (or /ital E/ center) acceptor. The signs and magnitudes (which range from /similar to/0 to 5 A/sup 3//emitted-carrier) of these relaxations are discussed in terms of models for the impurities and defects responsible for the associated levels. The results on the chalcogenides are compared with recent theoretical results. The experimental method used appears to be the only viable experimental method for determining these relaxations which are a direct manifestation of the effective electron-phonon coupling at deep levels and which are important to the understanding of many of the properties of deep levels.

  16. High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology

    NASA Astrophysics Data System (ADS)

    Jacobson, D. C.; Kamgar, A.; Eaglesham, D. J.; Lloyd, E. J.; Hillenius, S. J.; Poate, J. M.

    1995-03-01

    High energy ion implantation has been utilized to fabricate profiled tubs and to create gettering sites in deep submicron CMOS devices in bulk and epitaxial Si. The isolation and latch-up characteristics have been measured and found to be superior to those of devices in tubs fabricated by the conventional thermal drive-in method. High energy implants into bulk Si produce inferior gettering as deduced from diode leakage measurements. Iron gettering to the MeV boron implanted region has been investigated.

  17. Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy

    SciTech Connect

    Filatov, D. O.; Zimovets, I. A.; Isakov, M. A.; Kuznetsov, V. P.; Kornaukhov, A. V.

    2011-09-15

    The method of ballistic electron emission spectroscopy is used for the first time to study the energy spectrum of Er-impurity complexes in Si. The features are observed in the ballistic electron spectra of mesa diodes based on p{sup +}-n{sup +} Si structures with a thin ({approx}30 nm) p{sup +}-Si:Er surface layer in the region of ballistic-electron energies eV{sub t} lower than the conduction-band-edge energy E{sub c} in this layer. They are associated with the tunnel injection of ballistic electrons from the probe of the scanning tunnel microscope to the deep donor levels of the Er-impurity complexes in the p{sup +}-Si:Er layer with subsequent thermal excitation into the conduction band and the diffusion to the p{sup +}-n{sup +} junction and the direct tunneling in it. To verify this assumption, the ballistic-electron transport was simulated in the system of the Pt probe, native-oxide layer SiO{sub 2}-p{sup +}-Si:Er-n{sup +}, and Si substrate. By approximating the experimental ballistic-electron spectra with the modeling spectra, the ground-state energy of the Er complex in Si was determined: E{sub d} Almost-Equal-To E{sub c} - 0.27 eV. The indicated value is consistent with the data published previously and obtained from the measurements of the temperature dependence of the free-carrier concentration in Si:Er layers.

  18. First principle prediction of shallow defect level binding energies and deep level nonradiative recombination rates

    NASA Astrophysics Data System (ADS)

    Wang, Linwang

    2014-03-01

    Accurate calculation of defect level energies in semiconductors and their carrier capturing rate is an important issue in ab initio prediction of semiconductor properties. In this talk, I will present our result work in ab initio shallow level calculation and deep level caused nonradiative recombination rate calculation. In the shallow acceptor level calculation, a large system up to 64,000 atoms needs to be used to properly describe the weakly bounded hole wave functions. The single particle Hamiltonian of that system is patched from bulk potential and central potential. Furthermore, GW calculation is used to correct the one site potential of the impurity atom. The resulting binding energy agrees excellently with the experiments within 10 meV. To calculate the nonradiative decay rate, the electron-phonon coupling constants in the defect system are calculated all at once using a new variational algorithm. Multiphonon process formalism is used to calculate the nonradiative decay rate. It is found that the transition is induced by the electron and the optical phonon coupling, but the energy conservation is mostly satisfied by the acoustic phonons. The new algorithm allows fast calculation of such nonradiative decay rate for any defect levels, as well as other multiphonon processes in nanostructures. This work was supported by the Director, Office of Science (SC), Basic Energy Science (BES)/Materials Science and Engineering Division (MSED) of the U.S. Department of Energy (DOE) under the contract No. DE-AC02-05CH11231.

  19. Study of Deep Levels in Mesa-Type HgCdTe Device

    NASA Astrophysics Data System (ADS)

    Yoshino, Junya; Morimoto, Jun; Wada, Hideo

    1998-07-01

    The deep levels in the p+-on-n mesa-type Hg1-xCdxTe (x=0.222) device fabricated on the Si substrate by the molecular beam epitaxy method have been studied using the isothermal capacitance transient spectroscopy (ICTS) method and the spectral analysis of deep level transient spectroscopy (SADLTS) method. The value of the activation energy and the capture cross section could not be determined by means of ICTS because the apparent peaks were not obtained in the ICTS spectrum. However, five deep levels have been confirmed by SADLTS and the activation energies and the capture cross sections for each level were calculated. The confirmed levels existed from 19.7 meV to 45.7 meV below the conduction band edge. Three deeper levels are considered to be related to the Hg vacancy, whereas two shallower levels are considered to be related to the impurity in the n-type region. Moreover it is suggested that three deeper levels may assist the tunneling current in the reverse bias region. On the other hand, the obtained values of the capture cross sections ranged from 10-18 to 10-11 cm2.

  20. Thermal annealing behavior of deep levels in Rh-doped n-type MOVPE GaAs

    NASA Astrophysics Data System (ADS)

    Naz, Nazir A.; Qurashi, Umar S.; Zafar Iqbal, M.

    2009-12-01

    We report the results of isochronal annealing study of deep levels in Rh-doped n-type GaAs grown by metal-organic vapor phase epitaxy (MOVPE). Deep level transient spectroscopy (DLTS) technique has been employed to study the effects of annealing on deep levels in Rh-doped p+nn+ junction samples. A majority-carrier emitting band of deep levels along with a high temperature peak (RhE1), corresponding to deep level energy position Ec-0.92 eV and a minority-carrier emitting band of deep levels are identified with Rh-impurity prior to thermal annealing of our samples. In addition to these Rh-related deep levels, the well-known native defect EL2 at Ec-0.79 eV is observed in majority-carrier emission spectra and two inadvertent deep-level defects, H1 at Ev+0.09 eV and H3 at Ev+0.93 eV, usually observed in reference (without Rh) samples, are also detected in the minority-carrier emission spectra of Rh-doped samples. At least one level is found to be introduced at Ec-0.13 eV in Rh-doped samples at about the same temperature position as the level E(A)1, observed in reference samples, as a result of isochronal annealing, while the other two levels observed in reference samples could not be seen in annealed Rh-doped samples. Data on the annealing behavior and other characteristics of both Rh-related bands of deep levels observed in majority- and minority-carrier emission DLTS spectra, as well as for the high temperature Rh-related electron-emission peak, are presented. Possible interpretations of these results for the nature and structure of the different deep-level defects are discussed.

  1. Determination of trace level impurities in uranium compounds by ICP-AES after organic extraction.

    PubMed

    Marin, S; Cornejo, S; Jara, C; Duran, N

    1996-06-01

    The determination was studied of Al, B, Be, Cd, Ca, Co, Cu, Mg, Mn, Mo, Pb, Si, Sn, V, Cr, Ni, and Fe as trace level impurities in uranium compounds by ICP-AES after extraction of uranium with three different mixtures of di-(2-ethyl-hexyl) phosphate (D2EHP) and tri-(2-ethyl-hexyl)-phosphate (T2EHP) in solvents like toluene, carbon tetrachloride, hexane and cyclohexane. The study was carried out in presence of different concentrations of HCl and HNO(3). A single extraction with D2EHP in cyclohexane using nitric acid as matrix was sufficient to reduce the U(3)O(8) concentration from 100 g/l to 100 microg/ml. The ICP-AES instrumentation applied, allowed the determination of metal concentrations ten-times lower than those usually found in nuclear grade U(3)O(8). To check the efficiency of the extraction and the accuracy of the proposed method, Certified Reference Materials were used in the dissolution and extraction steps. The method described can be used for the determination of trace metals in nuclear grade U(3)O(8).

  2. Impurity gettering

    SciTech Connect

    Picraux, S.T.

    1995-06-01

    Transition metal impurities are well known to cause detrimental effects when present in the active regions of Si devices. Their presence degrades minority carrier lifetime, provides recombination-generation centers, increases junction leakage current and reduces gate oxide integrity. Thus, gettering processes are used to reduce the available metal impurities from the active region of microelectronic circuits. Gettering processes are usually divided into intrinsic (or internal) and extrinsic (or external) categories. Intrinsic refers to processing the Si wafer in a way to make available internal gettering sites, whereas extrinsic implies externally introduced gettering sites. Special concerns have been raised for intrinsic gettering. Not only will the formation of the precipitated oxide and denuded zone be difficult to achieve with the lower thermal budgets, but another inherent limit may set in. In this or any process which relies on the precipitation of metal silicides the impurity concentration can only be reduced as low as the solid solubility limit. However, the solubilities of transition metals relative to silicide formation are typically found to be {approx_gt}10{sup 12}/cm{sup 3} at temperatures of 800 C and above, and thus inadequate to getter to the needed concentration levels. It is thus anticipated that future microelectronic device processing will require one or more of the following advances in gettering technology: (1) new and more effective gettering mechanisms; (2) quantitative models of gettering to allow process optimization at low process thermal budgets and metal impurity concentrations, and/or (3) development of front side gettering methods to allow for more efficient gettering close to device regions. These trend-driven needs provide a driving force for qualitatively new approaches to gettering and provide possible new opportunities for the use of ion implantation in microelectronics processing.

  3. Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters

    NASA Astrophysics Data System (ADS)

    Okushi, Hideyo; Tokumaru, Yozo

    1980-06-01

    A new measurement method for deep levels in semiconductors is proposed, by which the measurement of the transient change of capacitance is performed under an isothermal condition (Isothermal Capacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis system by a programmable calculator. Computer simulation and experiment by the method in the case of Au-doped Si are demonstrated. It is shown that the method is one of useful tools for spectroscopic analysis of deep levels in semiconductors.

  4. Deep-levels in gallium arsenide for device applications

    NASA Astrophysics Data System (ADS)

    McManis, Joseph Edward

    Defects in semiconductors have been studied for over 40 years as a diagnostic of the quality of crystal growth. In this thesis, we investigate GaAs deep-levels specifically intended for devices. This thesis summarizes our efforts to characterize the near-infrared photoluminescence from deep-levels, study optical transitions via absorption, and fabricate and characterize deep-level light-emitting diodes (LEDs). This thesis also describes the first tunnel diodes which explicitly make use of GaAs deep-levels. Photoluminescence measurements of GaAs deep-levels showed a broad peak around a wavelength extending from 1.0--1.7 mum, which includes important wavelengths for fiber-optic communications (1.3--1.55 mum). Transmission measurements show the new result that very little of the radiative emission is self-absorbed. We measured the deep-level photoluminescence at several temperatures. We are also the first to report the internal quantum efficiency associated with the deep-level transitions. We have fabricated LEDs that, utilize the optical transitions of GaAs deep-levels. The electroluminescence spectra showed a broad peak from 1.0--1.7 mum at low currents, but the spectrum exhibited a blue-shift as the current was increased. To improve device performance, we designed an AlGaAs layer into the structure of the LEDs. The AlGaAs barrier layer acts as a resistive barrier so that the holes in the p-GaAs layer are swept away from underneath the gold p-contact. The AlGaAs layer also reduces the blue-shift by acting as a potential barrier so that only higher-energy holes are injected. We found that the LEDs with AlGaAs were brighter at long wavelengths, which was a significant improvement. Photoluminescence measurements show that the spectral blue-shift is not due to sample heating. We have developed a new physical model to explain the blue-shift: it is caused by Coloumb charging of the deep-centers. We have achieved the first tunnel diodes with which specifically utilize deep-levels

  5. Large impurity effects in rubrene crystals: First-principles calculations

    SciTech Connect

    Tsetseris, L.; Pantelides, Sokrates T.

    2008-01-01

    Carrier mobilities of rubrene films are among the highest values reported for any organic semiconductor. Here, we probe with first-principles calculations the sensitivity of rubrene crystals on impurities. We find that isolated oxygen impurities create distinct peaks in the electronic density of states consistent with observations of defect levels in rubrene and that increased O content changes the position and shape of rubrene energy bands significantly. We also establish a dual role of hydrogen as individual H species and H impurity pairs create and annihilate deep carrier traps, respectively. The results are relevant to the performance and reliability of rubrene-based devices.

  6. Deep-level transient conductance spectroscopy of high resistivity semiconductors

    NASA Astrophysics Data System (ADS)

    Alexiev, Dimitri; Prokopovich, Dale; Reinhard, Mark I.; Thomson, Stuart; Mo, Li

    2005-03-01

    We describe a deep-level transient-conductance (DLTC) spectrometer for high resistivity semiconductors, which uses a radiofrequency (40 MHz) marginal oscillator as conductance detector. The DLTC spectra are generated by periodically filling the deep-level trapping centres by carriers stimulated by a pulsed GaAs laser. Then the trap-emptying conductance's signal process through an exponential Miller correlator as the sample temperature is slowly ramped. A simple capacitive coupling of the samples to the oscillator tank circuit eliminates problems such as unwanted defect annealing and other material changes often associated with the high-temperature techniques necessary for ohmic contact formation. Representative deep-level spectra for CdTe, CdZnTe, HgI and gamma-irradiated Si are given.

  7. Characterization of a deep-level compensation ratio through picosecond four-wave mixing on a transient reflection grating

    NASA Astrophysics Data System (ADS)

    Kadys, A.; Delaye, Ph; Roosen, G.; Jarasiunas, K.

    2007-09-01

    We demonstrate a novel application of a time-resolved four-wave mixing technique for the determination of a deep-level compensation ratio in a semi-insulating crystal. The approach is based on photoexcitation of carriers from deep impurity levels, formation of a space-charge electric field in deep traps, and monitoring dynamics of photorefractive, free- carrier and absorption gratings by light diffraction. The analysis of anisotropic diffraction features on the reflection grating provided requirements for crystal orientation in order to discriminate contribution of amplitude grating from the photorefractive phase grating, both being related to deep-trap occupation. Contributions of these optical nonlinearities were studied experimentally in (0 0 1)-oriented GaAs wafers by using a transient reflection grating configuration with a very small grating period (150 nm). Comparison of the reflection grating picosecond kinetics and its diffraction efficiency with modeling curves allowed us to ascribe the slow decay component to amplitude grating in recharged deep traps and determine their compensation ratio. The proposed technique allowed the determination of the compensation ratio of a deep EL2 donor, equal to 0.6 ± 0.05 in the given GaAs crystal.

  8. Investigation of Deep Levels in GaInNas

    SciTech Connect

    Abulfotuh, F.; Balcioglu, A.; Friedman, D.; Geisz, J.; Kurtz, S.

    1998-11-12

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length.

  9. The Deep-Level-Reasoning-Question Effect: The Role of Dialogue and Deep-Level-Reasoning Questions during Vicarious Learning

    ERIC Educational Resources Information Center

    Craig, Scotty D.; Sullins, Jeremiah; Witherspoon, Amy; Gholson, Barry

    2006-01-01

    We investigated the impact of dialogue and deep-level-reasoning questions on vicarious learning in 2 studies with undergraduates. In Experiment 1, participants learned material by interacting with AutoTutor or by viewing 1 of 4 vicarious learning conditions: a noninteractive recorded version of the AutoTutor dialogues, a dialogue with a…

  10. Formation energies and energy levels of deep defects in narrow gap semiconductors

    SciTech Connect

    Patterson, J.D.; Li, W.

    1996-12-31

    The authors use a Green`s function technique for deep defect energy level calculations in mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS). The formation energy is calculated from the difference between the total binding energy with an impurity cluster and with a perfect cluster. These alloys are among those that have been experimentally grown in microgravity aboard the Space Shuttle. To evaluate the quality of these crystals, it is necessary to characterize them, and one important aspect of this characterization is the study of deep defects which can limit carrier lifetime. Relaxation effects are calculated with molecular dynamics. The resulting energy shift can be greater for the interstitial case than the substitutional one. Relaxation in vacancies is also considered. The charged state energy shift (as computed by a modified Haldane-Anderson model) can be twice that caused by relaxation. However, different charged states for vacancies had little effect on the formation energy. For all cases the authors considered the concentration of Cd or Zn in the range appropriate for a band gap of 0.1 eV. The emphasis of their calculation is on chemical trends. Only limited comparison to experiment and other calculations is possible, but what there is supports the statement that their results are at least of the right order of magnitude.

  11. Density of states in a two-dimensional electron gas: Impurity bands and band tails

    NASA Astrophysics Data System (ADS)

    Gold, A.; Serre, J.; Ghazali, A.

    1988-03-01

    We calculate the density of states of a two-dimensional electron gas in the presence of charged impurities within Klauder's best multiple-scattering approach. The silicon metal-oxide-semiconductor (MOS) system with impurities at the interface is studied in detail. The finite extension of the electron wave function into the bulk is included as well as various dependences of the density of states on the electron, the depletion, and the impurity densities. The transition from an impurity band at low impurity concentration to a band tail at high impurity concentration is found to take place at a certain impurity concentration. If the screening parameter of the electron gas is decreased, the impurity band shifts to lower energy. For low impurity density we find excited impurity bands. Our theory at least qualitatively explains conductivity and infrared-absorption experiments on impurity bands in sodium-doped MOS systems and deep band tails in the gap observed for high doping levels in these systems.

  12. Deep borehole disposal of high-level radioactive waste.

    SciTech Connect

    Stein, Joshua S.; Freeze, Geoffrey A.; Brady, Patrick Vane; Swift, Peter N.; Rechard, Robert Paul; Arnold, Bill Walter; Kanney, Joseph F.; Bauer, Stephen J.

    2009-07-01

    Preliminary evaluation of deep borehole disposal of high-level radioactive waste and spent nuclear fuel indicates the potential for excellent long-term safety performance at costs competitive with mined repositories. Significant fluid flow through basement rock is prevented, in part, by low permeabilities, poorly connected transport pathways, and overburden self-sealing. Deep fluids also resist vertical movement because they are density stratified. Thermal hydrologic calculations estimate the thermal pulse from emplaced waste to be small (less than 20 C at 10 meters from the borehole, for less than a few hundred years), and to result in maximum total vertical fluid movement of {approx}100 m. Reducing conditions will sharply limit solubilities of most dose-critical radionuclides at depth, and high ionic strengths of deep fluids will prevent colloidal transport. For the bounding analysis of this report, waste is envisioned to be emplaced as fuel assemblies stacked inside drill casing that are lowered, and emplaced using off-the-shelf oilfield and geothermal drilling techniques, into the lower 1-2 km portion of a vertical borehole {approx}45 cm in diameter and 3-5 km deep, followed by borehole sealing. Deep borehole disposal of radioactive waste in the United States would require modifications to the Nuclear Waste Policy Act and to applicable regulatory standards for long-term performance set by the US Environmental Protection Agency (40 CFR part 191) and US Nuclear Regulatory Commission (10 CFR part 60). The performance analysis described here is based on the assumption that long-term standards for deep borehole disposal would be identical in the key regards to those prescribed for existing repositories (40 CFR part 197 and 10 CFR part 63).

  13. Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band.

    PubMed

    Dobrowolska, M; Tivakornsasithorn, K; Liu, X; Furdyna, J K; Berciu, M; Yu, K M; Walukiewicz, W

    2012-02-19

    The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature T(C). It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. Here we combine results of channelling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines T(C) through determining the degree of hole localization. This finding differs drastically from the often accepted view that T(C) is controlled by valence band holes, thus opening new avenues for achieving higher values of T(C).

  14. Migration of impurity level reflected in the electrical conductivity variation for natural pyrite at high temperature and high pressure

    NASA Astrophysics Data System (ADS)

    Liu, Kaixiang; Dai, Lidong; Li, Heping; Hu, Haiying; Wu, Lei; Zhuang, Yukai; Pu, Chang; Yang, Linfei

    2017-06-01

    This report presents the variations of the electrical conductivity and the migration of natural pyrite impurity levels at temperatures range from 298 to 573 K and pressures range from 1 atm. to 20.9 GPa. The electrical conductivity increases with temperature at a fixed pressure, displaying the semiconductor behavior of the sample. In spite of the positive correlations of electrical conductivity and pressure, there exists an acceleration in the rate of conductivity increase after 13 GPa. No indication of a chemical reaction or structural phase transition of pyrite was detected by Raman spectroscopy. The main trace elements that affect the electrical properties of pyrite are determined by inductively coupled plasma with mass spectrometry (ICPMS). The transport activation energy of natural pyrite is 0.045 eV at ambient pressure, which corresponds to the activation of the CoFe donor level ( 1/2 E D), and decreases with increasing pressure.

  15. Gallium arsenide deep-level optical emitter for fibre optics.

    PubMed

    Pan, Janet L; McManis, Joseph E; Osadchy, Thomas; Grober, Louise; Woodall, Jerry M; Kindlmann, Peter J

    2003-06-01

    Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaAs bandgap wavelength (0.85 microm) is far too short for fibre optics at 1.3-1.5 microm. This has led to work on materials that have a large lattice mismatch on GaAs. Here we demonstrate the first light-emitting diode (LED) that emits at 1.5 microm fibre-optic wavelengths in GaAs using optical transitions from arsenic antisite (As(Ga)) deep levels. This is an enabling technology for fibre-optic components that are lattice-matched to GaAs integrated circuits. We present experimental results showing significant internal optical power (24 mW) and speed (in terahertz) from GaAs optical emitters using deep-level transitions. Finally, we present theory showing the ultimate limit to the efficiency-bandwidth product of semiconductor deep-level optical emitters.

  16. Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

    NASA Astrophysics Data System (ADS)

    Nakano, Yoshitaka; Irokawa, Yoshihiro; Sumida, Yasunobu; Yagi, Shuichi; Kawai, Hiroji

    2012-11-01

    We report on a correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures, employing Schottky barrier diodes. Photo-capacitance spectroscopy measurements reveal three specific deep levels located at ˜2.07, ˜2.80, and ˜3.23 eV below the conduction band, presumably attributable to Ga vacancies and/or impurity C present in the GaN buffer layer. Additionally, from photo-assisted turn-on current recovery measurements, by using 390 and 370 nm long-pass filters, the recovery time becomes significantly faster due to inactivation of their corresponding deep-level traps. Therefore, the ˜2.80 and ˜3.23 eV levels are probably responsible for the carrier-trapping phenomena in the bulk region.

  17. Deep UV Positive Resists For Two-Level Photoresist Processes

    NASA Astrophysics Data System (ADS)

    Reichmanis, E.; Smolinsky, G.

    1984-05-01

    Interest has steadily grown during the past few years in materials that are resistant to dry etching techniques that can be used in multilevel resist processes. This is perhaps a result of the greater demands placed on resist technology by increased device complexity and resolution requirements. The most well known multilevel resist methods are the two-level PCM (portable conformable mask, first described by B. J. Lin ) and the BTL trilevel processes. In the latter, the pattern defined in the top level is transfered first to a thin silicon dioxide layer and subsequently to the substrate by dry etching. A two-level photoresist process employing 200-300 nm irradiation of the upper layer followed by transfer of the resultant image into the lower layer by dry etching, combines the attractive features of both deep UV lithography and multilevel resist 3processing. Deep UV lithography affords improved resolution due to decreased diffraction, while multilevel processing2alleviates the problems associated with substrate topography and sur-face reflectivity. An outline of this resist processing scheme is shown in Figure 1. The substrate is coated first with a thick layer of an organic polymer that effectively planarizes the wafer surface. A layer of photoresist is then applied. Deep UV exposure and routine development of the top layer generates the desired pattern which is transferred to the substrate by oxygen RIE. One means of iiproving the resistance of a material to RIE is incorporation of silicon. Taylor and Wolf have reported that the addition of silicon containing compounds to organic polymers improves their resistance to erosion by an oxygen discharge, presumably by the formation of a protective layer of SiO2. Dialkyl siloxane polymers have been Eeported to be usable as negative deep UV resists in the two-level process described above. Anotheg negative, oxygen RIE resistant, deep UV resist has been reported by MacDonald et al. This material, a copolymer of

  18. Deep-level spectroscopy in metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Kurtz, A.; Muñoz, E.; Chauveau, J. M.; Hierro, A.

    2017-02-01

    In this study we present a method for measuring bulk traps using deep-level spectroscopy techniques in metal-insulator-semiconductor (MIS) structures. We will focus on deep-level transient spectroscopy (DLTS), although this can be extended to deep-level optical spectroscopy (DLOS) and similar techniques. These methods require the modulation of a depletion region either from a Schottky junction or from a highly asymmetric p-n junction, junctions that may not be realizable in many current material systems. This is the case of wide-bandgap semiconductor families that present a doping asymmetry or have a high residual carrier concentration or surface carrier accumulation, such as InGaN or ZnO. By adding a thin insulating layer and forming an MIS structure this problem can be circumvented and DLTS/DLOS can be performed under certain conditions. A model for the measurement of bulk traps in MIS structures is thus presented, focusing on the similarities with standard DLTS, maintaining when possible links to existing knowledge on DLTS and related techniques. The model will be presented from an equivalent circuit point of view. The effect of the insulating layer on DLTS is evaluated by a combination of simulations and experiments, developing methods for the measurement of these type of devices. As a validation, highly doped ZnO:Ga MIS devices have been successfully characterized and compared with a reference undoped sample using the methods described in this work, obtaining the same intrinsic levels previously reported in the literature but in material doped as high as 1× {{10}18} cm-3.

  19. Identification of a novel low-level impurity in fungicide pyraclostrobin by high-performance liquid chromatography/tandem mass spectrometry.

    PubMed

    Xia, Kaimin; Shen, ShanShan; Gao, Qun; Shang, Wei; Pan, Yuanjiang; Wu, Jun

    2017-05-10

    Pyraclostrobin is one kind of new type methoxy acrylate fungicides that has been widely used in agriculture at present, with a lot of advantages including broad spectrum, high efficiency and high selectivity. In this work, a novel low-level impurity in the pyraclostrobin at about 0.2% was separated and characterized by high-performance liquid chromatography/tandem mass spectrometry (HPLC-MS). Firstly, the impurity was speculated to possess the same skeleton structure as the main product pyraclostrobin while the methyl group on the methyl ester was substituted to be CH2CH2Cl on the basis of the on-line multi-stage mass spectrometric behaviors compared with that of pyraclostrobin. Then the accurate molecular weight and element composition of target impurity was verified to be C20H19Cl2N3O4 by high resolution mass spectrometry. Finally, the proposed structure was further confirmed by the (1)H NMR data.

  20. Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

    NASA Astrophysics Data System (ADS)

    Sumiya, Masatomo; Toyomitsu, Naoki; Nakano, Yoshitaka; Wang, Jianyu; Harada, Yoshitomo; Sang, Liwen; Sekiguchi, Takashi; Yamaguchi, Tomohiro; Honda, Tohru

    2017-01-01

    We studied the emissive pits in InGaN films grown on compressive and strain-free GaN underlying layers. Pit density decreased with the full width at half maximum of ω(0002) of InGaN. The films grew on compressive and strain-free GaN underlying layers with spiral and step-flow modes, respectively. Carbon impurities accumulated inside the pits. Comparison of cathodoluminescence inside the pits and steady-state photocapacitance spectra showed that the energy level of the carbon impurities appeared at ˜2.8 eV below the conduction band (Ec) for both types of pits. Deep-level defects at Ec -2.4 eV resulting in green fluorescence emission were considered to originate from pits related to screw dislocations.

  1. A first-principles core-level XPS study on the boron impurities in germanium crystal

    SciTech Connect

    Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji

    2013-12-04

    We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

  2. A first-principles core-level XPS study on the boron impurities in germanium crystal

    NASA Astrophysics Data System (ADS)

    Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji

    2013-12-01

    We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

  3. Deep-level stereoscopic multiple traps of acoustic vortices

    NASA Astrophysics Data System (ADS)

    Li, Yuzhi; Guo, Gepu; Ma, Qingyu; Tu, Juan; Zhang, Dong

    2017-04-01

    Based on the radiation pattern of a planar piston transducer, the mechanisms underlying the generation of axially controllable deep-level stereoscopic multiple traps of acoustic vortices (AV) using sparse directional sources were proposed with explicit formulae. Numerical simulations for the axial and cross-sectional distributions of acoustic pressure and phase were conducted for various ka (product of the wave number and the radius of transducer) values at the frequency of 1 MHz. It was demonstrated that, for bigger ka, besides the main-AV (M-AV) generated by the main lobes of the sources, cone-shaped side-AV (S-AV) produced by the side lobes were closer to the source plane at a relatively lower pressure. Corresponding to the radiation angles of pressure nulls between the main lobe and the side lobes of the sources, vortex valleys with nearly pressure zero could be generated on the central axis to form multiple traps, based on Gor'kov potential theory. The number and locations of vortex valleys could be controlled accurately by the adjustment of ka. With the established eight-source AV generation system, the existence of the axially controllable multiple traps was verified by the measured M-AV and S-AVs as well as the corresponding vortex valleys. The favorable results provided the feasibility of deep-level stereoscopic control of AV and suggested potential application of multiple traps for particle manipulation in the area of biomedical engineering.

  4. Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling

    NASA Astrophysics Data System (ADS)

    Chin, Ken K.; Cheng, Zimeng

    2016-09-01

    The widely used deep level transient spectroscopy (DLTS) theory and data analysis usually assume that the defect level distribution is uniform through the depth of the depletion region of the n—p junction. In this work we introduce the concept of effective Fermi level of the steady state of semiconductor, by using which deep level transient spectroscopy depth profiling (DLTSDP) is proposed. Based on the relationship of its transition free energy level (TFEL) and the effective Fermi level, the rules of detectivity of the defect levels are listed. Computer simulation of DLTSDP is presented and compared with experimental data. The experimental DLTS data are compared with what the DLTSDP selection rules predicted. The agreement is satisfactory.

  5. Development of RP UPLC-TOF/MS, stability indicating method for omeprazole and its related substances by applying two level factorial design; and identification and synthesis of non-pharmacopoeial impurities.

    PubMed

    Jadhav, Sushant Bhimrao; Kumar, C Kiran; Bandichhor, Rakeshwar; Bhosale, P N

    2016-01-25

    A new UPLC-TOF/MS compatible, reverse phase-stability indicating method was developed for determination of Omeprazole (OMP) and its related substances in pharmaceutical dosage forms by implementing Design of Experiment (DoE) i.e. two level full factorial Design (2(3)+3 center points=11 experiments) to understand the Critical Method Parameters (CMP) and its relation with Critical Method Attribute (CMA); to ensure robustness of the method. The separation of eleven specified impurities including conversion product of OMP related compound F (13) and G (14) i.e. Impurity-I (1), OMP related compound-I (11) and OMP 4-chloro analog (12) was achieved in a single method on Acquity BEH shield RP18 100 × 2.1 mm, 1.7 μm column, with inlet filter (0.2 μm) using gradient elution and detector wavelength at 305 nm and validated in accordance with ICH guidelines and found to be accurate, precise, reproducible, robust and specific. The drug was found to degrade extensively in heat, humidity and acidic conditions and forms unknown degradation products during stability studies. The same method was used for LC-MS analysis to identify m/z and fragmentation of maximum unknown impurities (Non-Pharmacopoeial) i.e. Impurity-I (1), Impurity-III (3), Impurity-V (5) and Impurity-VIII (9) formed during stability studies. Based on the results, degradation pathway for the drug has been proposed and synthesis of identified impurities i.e. impurities (Impurity-I (1), Impurity-III (3), Impurity-V (5) and Impurity-VIII (9)) are discussed in detail to ensure in-depth understanding of OMP and its related impurities and optimum performance during lifetime of the product.

  6. Human-level control through deep reinforcement learning.

    PubMed

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-26

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  7. Human-level control through deep reinforcement learning

    NASA Astrophysics Data System (ADS)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A.; Veness, Joel; Bellemare, Marc G.; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K.; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-01

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  8. Characterization of deep level defects present in mono-like, quasi-mono and multicrystalline silicon solar substrates

    NASA Astrophysics Data System (ADS)

    Pérez, E.; García, H.; Castán, H.; Dueñas, S.

    2015-03-01

    Defects on mono-like (ml-Si), quasi-mono (qm-Si) and multicrystalline silicon solar cell substrates are studied in depth. Using the thermal admittance spectroscopy technique we found a single deep level with an activation energy between 213 and 224 meV and a capture cross section in the order of 10-15-10-14 cm2, in the case of ml-Si samples. The 271, 291 and 373 meV levels were found in qm-Si samples. The first one is associated with a capture cross section in the order of 10-16 cm2, the second one in the order of 10-14, while the third one is associated, for the same magnitude, with a value in the order of 10-12 cm2. Multicrystalline samples showed two tendencies in the Arrhenius plot fit associated with a deep level in each one. The activation energy of the first one ranges from 336 meV to 342 meV, and the capture cross sections are in the order of 10-13-10-11 cm2. The values obtained for the second one are 251 and 171 meV, with the capture cross section values in the order of 10-15 and 10-18 cm2, respectively. The nature of these defects is probably due to iron-based impurities in different complexes. Segregation into extended defects of Fei or Fei-V is the most probable cause of the deep levels with higher capture cross section value. Punctual complexes such as Fei or Fei-V2 are probably the reason for the deep levels with lower capture cross section value.

  9. Transient - Photoresistance Spectroscopy of Deep Levels in High Resistivity Semiconductors

    NASA Astrophysics Data System (ADS)

    Seabaugh, Alan Carter

    A new photoinduced transient-resistance technique is proposed and examined for use in characterizing high -resistivity, short-lifetime semiconductors. In this technique, termed photoresistance deep-level transient spectroscopy (PR-DLTS), an optical pulse is used to generate excess carriers which are trapped by deep levels in the material. The ac resistance of the specimen is monitored, and the resistance transient which occurs after the illumination ends is signal processed in the same way as the capacitance transient in DLTS. A phenomenological model of the phototransient is used to derive an expression for the decay transient. Two limiting forms for the transient are predicted depending upon whether the emitted carriers are collected at the device contacts, or recombine in the bulk before being collected. In order to test this model, several methods for distinguishing between the predicted decays of the form exp(-(lamda)t) and (lamda)exp(-(lamda)t) were developed ((lamda) is the reciprocal time constant for the decay). The measured results are consistent with the predictions of the model, but an 'ideal' sample has not been found to fully test the predictions. On Au-doped Si, excellent agreement between published emission rates for the Au-acceptor and the apparent emission rates measured by PR-DLTS is found. In addition, PR-DLTS data for the Cr-related deep level in semi-insulating GaAs is consistent with published DLTS results on conducting GaAs. Comparison of the PR-DLTS technique with the dc current-transient technique, photoinduced transient spectroscopy (PITS), shows that the two techniques are sensitive to the same trapping/detrapping phenomena. Finally, the results of a comparative study of commercial semi-insulating GaAs are reported. Nineteen specimens from ten suppliers were examined using the PR -DLTS technique, including material grown by the horizontal Bridgman (HB) and liquid-encapsulated Czochralski (LEC) technique, both with and without Cr

  10. Influence of the copper impurity level on the irradiation response of reactor pressure vessel steels investigated by SANS

    NASA Astrophysics Data System (ADS)

    Wagner, Arne; Ulbricht, Andreas; Bergner, Frank; Altstadt, Eberhard

    2012-06-01

    Reactor pressure vessel (RPV) steel, when exposed to neutron irradiation, induces the formation of nano-sized features. Using small angle neutron scattering (SANS) we have studied the neutron fluence dependence of the precipitate volume fraction for high-Cu and low-Cu materials separately. Cu-rich precipitates have long been recognized to play the dominant role in embrittlement of Cu-bearing RPV steels. In contrast, Mn-Ni-rich precipitates seem to govern embrittlement in the case of low levels of impurity Cu. The objective is to work out the resulting differences from the microstructural point of view. For low-Cu materials, the volume fraction was found to be within the detection limit of SANS at fluences below an apparent threshold fluence, whereas the slope increases considerably beyond. The relationship between irradiation-induced yield stress increase and precipitate volume fraction was also considered. We have derived estimates of the obstacle strength for Cu-rich precipitates and for Mn-Ni-rich precipitates.

  11. Deep levels and radiation effects in p-InP

    NASA Technical Reports Server (NTRS)

    Anderson, W. A.; Singh, A.; Jiao, K.; Lee, B.

    1989-01-01

    A survey was conducted on past studies of hole traps in InP. An experiment was designed to evaluate hole traps in Zn-doped InP after fabrication, after electron irradiation and after annealing using deep level transient spectroscopy. Data similar to that of Yamaguchi was seen with observation of both radiation-induced hole and electron traps at E sub A=0.45 eV and 0.03 eV, respectively. Both traps are altered by annealing. It is also shown that trap parameters for surface-barrier devices are influenced by many factors such as bias voltage, which probes traps at different depths below the surface. These devices require great care in data evaluation.

  12. Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Duc, Tran Thien; Pozina, Galia; Amano, Hiroshi; Monemar, Bo; Janzén, Erik; Hemmingsson, Carl

    2016-07-01

    Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition (MOCVD), undoped GaN grown by MOCVD, and halide vapor phase epitaxy (HVPE)-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy on Schottky diodes. One hole trap, labeled HT1, was detected in the Mg-doped sample. It is observed that the hole emission rate of the trap is enhanced by increasing electric field. By fitting four different theoretical models for field-assisted carrier emission processes, the three-dimensional Coulombic Poole-Frenkel (PF) effect, three-dimensional square well PF effect, phonon-assisted tunneling, and one-dimensional Coulombic PF effect including phonon-assisted tunneling, it is found that the one-dimensional Coulombic PF model, including phonon-assisted tunneling, is consistent with the experimental data. Since the trap exhibits the PF effect, we suggest it is acceptorlike. From the theoretical model, the zero field ionization energy of the trap and an estimate of the hole capture cross section have been determined. Depending on whether the charge state is -1 or -2 after hole emission, the zero field activation energy Ei 0 is 0.57 eV or 0.60 eV, respectively, and the hole capture cross section σp is 1.3 ×10-15c m2 or 1.6 ×10-16c m2 , respectively. Since the level was not observed in undoped GaN, it is suggested that the trap is associated with an Mg related defect.

  13. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    SciTech Connect

    Iwamoto, Naoya Azarov, Alexander; Svensson, Bengt G.; Ohshima, Takeshi; Moe, Anne Marie M.

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  14. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Iwamoto, Naoya; Azarov, Alexander; Ohshima, Takeshi; Moe, Anne Marie M.; Svensson, Bengt G.

    2015-07-01

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 1015 cm-3 range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ˜1014 cm-3). Schottky barrier diodes fabricated on substrates annealed at 1400-1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  15. Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation

    SciTech Connect

    Kubala-Kukus, A.; Banas, D.; Pajek, M.; Cao, W.; Dousse, J.-Cl.; Hoszowska, J.; Kayser, Y.; Szlachetko, M.; Salome, M.; Susini, J.; Szlachetko, J.

    2009-09-15

    We demonstrate that ultralow-level Al impurities on a silicon surface can be measured by using the high-resolution grazing emission x-ray fluorescence (GEXRF) technique combined with synchrotron-radiation excitation. An Al-impurity level of about 10{sup 12} atoms/cm{sup 2} was reached by observing the Al K{alpha} x-ray fluorescence in the resonant Raman-scattering background-''free'' regime by choosing an appropriate beam energy below the Si K absorption edge. Present results show that by combining the GEXRF method with the vapor phase decomposition technique the 10{sup 7} atoms/cm{sup 2} level can be reached for Al detection on silicon. Finally, we found that the high-resolution GEXRF technique is a sensitive tool to study the morphology of surface nanostructures.

  16. Deep-level magma ascent rates at Mt. Etna (Italy)

    NASA Astrophysics Data System (ADS)

    Armienti, P.; Perinelli, C.; Putirka, K. D.

    2012-12-01

    Deep-level ascent rates are related to the triggering mechanisms of volcanic eruptions. Recent models and experimental studies have focused on the very shallow parts of magma plumbing systems, mostly the upper few km, and have thus far emphasized that volatile contents and volatile exsolution, are key to understanding eruption dynamics and its fingerprint in the rock texture. Massive volatile loss induces a dramatic change in the liquidus temperature, thus producing observable effects on the rates of nucleation and growth of minerals . Volatile saturation, however, may well occur at greater depths, which means that initial stages of magma ascent may be triggered by events taking place at much greater depths than those recorded by melt inclusions, likely captured at shallow levels. We present a method to evaluate ascent rates deep in a volcano plumbing system, discussing the implications for magma dehydration and using Mt. Etna as case a study. We investigate the deeper levels of magma transport by presenting detailed P-T paths for Etnean magmas, and combining these with Crystal Size Distribution (CSD)-derived cooling rates. The key to this analysis is the recognition that the slope of a P-T path, as determined from mineral-melt thermobarometry, is a result of magma cooling rate, which is in turn a function of magma ascent via the effect of pressure on volatile solubility. We also rely on a thermodynamic treatment of exsolution of non-ideal H2O-CO2 mixtures, based on the Kerric & Jacobs (1981) model, and the simplified solubility model of CO2 (Spera & Bergman, 1980) and H2O (Nicholls, 1980), recalibrated with experimental and melt inclusions data from Mt. Etna. Our modeling is able to decipher magma ascent velocity, v (dH/dt; H = depth, t = time), from ascent rate (dP/dt), and rate of cooling (dT/dt), where ρ is magma density, P is pressure, T is temperature and g is the acceleration of gravity. This equation for v provides a key to investigating the relationships

  17. Deep-level defect characteristics in pentacene organic thin films

    NASA Astrophysics Data System (ADS)

    Yang, Yong Suk; Kim, Seong Hyun; Lee, Jeong-Ik; Chu, Hye Yong; Do, Lee-Mi; Lee, Hyoyoung; Oh, Jiyoung; Zyung, Taehyoung; Ryu, Min Ki; Jang, Min Su

    2002-03-01

    Organic thin-film transistors using the pentacene as an active electronic material have shown the mobility of 0.8 cm2/V s and the grains larger than 1 μm. To study the characteristics of electronic charge concentrations and the interface traps of the pentacene thin films, the capacitance properties were measured in the metal/insulator/organic semiconductor structure device by employing the capacitance-voltage and deep-level transient spectroscopy (DLTS) measurements. Based on the DLTS measurements, the concentrations and the energy levels of hole and electron traps in the obtained pentacene films were formed to be approximately 4.2×1015 cm-3 at Ev+0.24 eV, 9.6×1014 cm-3 at Ev+1.08 eV, 6.5×1015 cm-3 at Ev+0.31 eV and 2.6×1014 cm-3 at Ec-0.69 eV.

  18. Suitability of different containers for the sampling and storage of biogas and biomethane for the determination of the trace-level impurities--A review.

    PubMed

    Arrhenius, Karine; Brown, Andrew S; van der Veen, Adriaan M H

    2016-01-01

    The traceable and accurate measurement of biogas impurities is essential in order to robustly assess compliance with the specifications for biomethane being developed by CEN/TC408. An essential part of any procedure aiming to determinate the content of impurities is the sampling and the transfer of the sample to the laboratory. Key issues are the suitability of the sample container and minimising the losses of impurities during the sampling and analysis process. In this paper, we review the state-of-the-art in biogas sampling with the focus on trace impurities. Most of the vessel suitability studies reviewed focused on raw biogas. Many parameters need to be studied when assessing the suitability of vessels for sampling and storage, among them, permeation through the walls, leaks through the valves or physical leaks, sorption losses and adsorption effects to the vessel walls, chemical reactions and the expected initial concentration level. The majority of these studies looked at siloxanes, for which sampling bags, canisters, impingers and sorbents have been reported to be fit-for-purpose in most cases, albeit with some limitations. We conclude that the optimum method requires a combination of different vessels to cover the wide range of impurities commonly found in biogas, which have a wide range of boiling points, polarities, water solubilities, and reactivities. The effects from all the parts of the sampling line must be considered and precautions must be undertaken to minimize these effects. More practical suitability tests, preferably using traceable reference gas mixtures, are needed to understand the influence of the containers and the sampling line on sample properties and to reduce the uncertainty of the measurement. Copyright © 2015 Elsevier B.V. All rights reserved.

  19. Low level impurities in imported wheat are a likely source of feral transgenic oilseed rape (Brassica napus L.) in Switzerland.

    PubMed

    Schulze, Juerg; Brodmann, Peter; Oehen, Bernadette; Bagutti, Claudia

    2015-11-01

    In Switzerland, the cultivation of genetically modified (GM) oilseed rape (Brassica napus L.) and the use of its seeds for food and feed are not permitted. Nevertheless, the GM oilseed rape events GT73, MS8×RF3, MS8 and RF3 have recently been found in the Rhine port of Basel, Switzerland. The sources of GM oilseed rape seeds have been unknown. The main agricultural good being imported at the Rhine port of Basel is wheat and from 2010 to 2013, 19% of all Swiss wheat imports originated from Canada. As over 90% of all oilseed rape grown in Canada is GM, we hypothesised that imports of Canadian wheat may contain low level impurities of GM oilseed rape. Therefore, waste fraction samples gathered during the mechanical cleaning of Canadian wheat from two Swiss grain mills were analysed by separating oilseed rape seeds from waste fraction samples and testing DNA of pooled seeds for the presence of transgenes by real-time PCR. Furthermore, oilseed rape seeds from each grain mill were sown in a germination experiment, and seedling DNA was tested for the presence of transgenes by real-time PCR. GT73, MS8×RF3, MS8 and RF3 oilseed rape was detected among seed samples and seedlings of both grain mills. Based on this data, we projected a mean proportion of 0.005% of oilseed rape in wheat imported from Canada. Besides Canadian wheat, the Rhine port of Basel does not import any other significant amounts of agricultural products from GM oilseed rape producing countries. We therefore conclude that Canadian wheat is the major source of unintended introduction of GM oilseed rape seeds into Switzerland.

  20. Low energy electron irradiation induced deep level defects in 6H-SiC: the implication for the microstructure of the deep levels E1/E2.

    PubMed

    Chen, X D; Yang, C L; Gong, M; Ge, W K; Fung, S; Beling, C D; Wang, J N; Lui, M K; Ling, C C

    2004-03-26

    N-type 6H-SiC samples irradiated with electrons having energies of E(e)=0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E(e)>/=0.3 MeV, deep levels ED1, E(1)/E(2), and E(i) appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E(1)/E(2), as well as ED1 and E(i), involves the displacement of the C atom in the SiC lattice.

  1. Low Energy Electron Irradiation Induced Deep Level Defects in 6H-SiC: The Implication for the Microstructure of the Deep Levels E1/E2

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Yang, C. L.; Gong, M.; Ge, W. K.; Fung, S.; Beling, C. D.; Wang, J. N.; Lui, M. K.; Ling, C. C.

    2004-03-01

    N-type 6H-SiC samples irradiated with electrons having energies of Ee=0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2MeV irradiation energy while for Ee≥0.3 MeV, deep levels ED1, E1/E2, and Ei appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E1/E2, as well as ED1 and Ei, involves the displacement of the C atom in the SiC lattice.

  2. The electronic level structure of lanthanide impurities in REPO4, REBO3, REAlO3, and RE2O3 (RE = La, Gd, Y, Lu, Sc) compounds

    NASA Astrophysics Data System (ADS)

    Dorenbos, Pieter

    2013-06-01

    The vacuum referred binding energies of electrons in divalent and trivalent lanthanide impurity states and host band states in the rare earth (RE = La, Gd, Y, Lu, Sc) orthophosphates REPO4, orthoborates REBO3, aluminum perovskites REAlO3, and sesqui-oxides RE2O3 have been determined by combining the recently developed chemical shift model with spectroscopic data from the archival literature. The main trends in impurity and host band level locations with changing type of RE, which determines the site size, and with changing P, B, Al, or RE cation, which determines the strength of bonding with the oxygen ligands, are identified. Sc3+-based compounds are characterized by a relatively low energy for the conduction band bottom, or equivalently a high electron affinity, which is attributed to a relatively strong electron bonding in the 3d-shell of Sc2+.

  3. A facility for conducting high-temperature oxidation experiments of alloys in helium environments containing part per million levels of impurities

    NASA Astrophysics Data System (ADS)

    Kumar, Deepak; Torbet, Christopher J.; Was, Gary S.

    2009-09-01

    An experimental facility was constructed to study the corrosion of alloys in helium containing part per million (ppm) levels of CO, CO2, CH4 and H2 as impurities, relevant to the environment in the heat exchanger of the Very High Temperature Gas Cooled Reactor. The system provides the capability of exposing multiple specimens in up to seven separate helium environments, simultaneously, for durations of >1000 h and temperatures up to 1200 °C. Impurity concentrations are controlled down to 1 ppm accuracy and analyzed using a discharge ionization detector gas chromatograph. The utility and reliability of the facility in quantitatively accounting for the masses of reactants and products involved in the oxidation of alloy 617 at 900 °C and 1000 °C in the helium gas containing 15 ppm CO and 1.5 ppm CO2 is confirmed by the weight-gain measurements, gas-phase analysis and post-test microstructural analysis.

  4. DLTS Study of RIE-Induced Deep Levels in Si Using p+n Diode Arrays

    NASA Astrophysics Data System (ADS)

    Watanabe, Miyoko Oku; Taguchi, Minoru; Kanzaki, Koichi; Zohta, Yasuhito

    1983-02-01

    Deep levels in Si induced by reactive ion etching (RIE) of SiO2 film have been studied by DLTS. In order to detect the RIE-induced damage existing near the surface region, special device structures consisting of p+n diode arrays are used. It is found that the dominant deep levels produced by RIE are four hole traps. One level at Ev+0.40 eV exhibits the Poole-Frenkel effect, from which it is identified as an acceptor. Another level at Ev+0.46 eV is deduced to be an interstitial iron level from the emission rate. There is a strong decrease in the deep level concentrations upon annealing above 500°C. However, the deep levels do not completely disappear upon annealing at high temperatures. The deep level concentrations correlate well with the current-voltage characteristics of the devices.

  5. Matrix elimination ion chromatography method for the determination of trace levels of anionic impurities in high purity cesium iodide.

    PubMed

    Ayushi; Kumar, Sangita D; Reddy, A V R

    2012-01-01

    In the present study an ion chromatographic method based on matrix elimination has been developed for the determination of anionic impurities in high purity cesium iodide crystals. The presence of impurities has a detrimental effect on the characteristics of detectors based on cesium iodide crystals. In particular, oxygen-containing anions inhibit the resolving power of scintillators and decrease the optical absorption. The quantitative determination of anions (fluoride, chloride, bromide, nitrate, phosphate, and sulphate) simultaneously in the high-purity cesium iodide crystals has not been carried out before. The large concentration of iodide poses a challenge in the determination of anions (especially phosphate and sulphate); hence, matrix elimination is accomplished by adopting a sample pretreatment technique. The method is validated for linearity, accuracy, and precision. The limit of detection for different anions is in the range of 0.3-3 µg/g, and the relative standard deviation is in the range of 4-6% for the overall method.

  6. Impurities in Kevlar 49 fibers

    SciTech Connect

    Pruneda, C.O.; Morgan, R.J.; Lim, R.; Gregory, L.J.; Fischer, J.W.

    1984-12-11

    The impurities in Kevlar 49 fibers (poly(p-phenylene terephthalamide)PPTA) are reported and discussed in terms of the fiber fabrication processes. These impurities were monitored by inductively coupled plasma emission and optical emission spectroscopy. The principal impurities Na/sub 2/SO/sub 4/ and total S were analyzed chemically. From these chemical analyses together with C, N, H elemental analyses we show that there are 1.5 wt % impurities present in Kevlar 49 fibers of which approx. 50% are in the form of Na/sub 2/SO/sub 4/ and the remainder probably in the form of benzene sulfonic -SO/sub 3/H PPTA side groups. There are 3 of these acid groups per each PPTA macromolecule. Organic impurities, such as terephthalic acid are discussed in the light of degradation studies of PPTA-H/sub 2/SO/sub 4/ spinning dopes. Electron microprobe x-ray spectroscopy and laser-induced damage studies were utilized to investigate the distribution of impurities through the fiber cross-section. The distribution of impurities throughout the fiber are determined by the fiber fabrication processes and are discussed at the microscopic and molecular level. The defects caused by these impurities and their effect on the deformation and failure modes are also considered. 22 references, 3 tables.

  7. Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

    NASA Astrophysics Data System (ADS)

    Wang, Zhao; Li, Bing; Zheng, Xu; Xie, Jing; Huang, Zheng; Liu, Cai; Feng, Liang-Huan; Zheng, Jia-Gui

    2010-02-01

    Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at Ev + 0.128 eV, originates from the vacancy of Cd (VCd). The electron trap E1, found at Ec -0.178 eV, is considered to be correlated with the interstitial Cuj+ in CdTe.

  8. Improved Performance of the Alkaline-Side CSEX Process for Cesium Extraction from Alkaline High-Level Waste Obtained by Characterization of the Effect of Surfactant Impurities

    SciTech Connect

    Delmau, L.H.

    1999-11-04

    Improved understanding and performance of the alkaline-side CSEX process has been obtained through the characterization of impurity effects that hinder complete stripping of cesium from the solvent. It is shown in this report that tests of the alkaline-side CSEX process conducted in the summer and fall of 1998 were complicated by the presence of common surfactant anions, undecyl- and dodecylsulfonate, as trace impurities in the two simulants tested. This conclusion was drawn from the results of a series of systematic extraction tests followed by a definitive identification by electrospray mass spectrometry (ES-MS). Based on this understanding, a straightforward preventative measure involving the addition of a lipophilic tertiary amine extractant at a small concentration to the solvent is proposed and demonstrated. As part of the task ''Fission Product Solvent Extraction'' supported by the Efficient Separations and Processing Crosscutting Program within the USDOE Office of Environmental Management, the alkaline-side CSEX process has been developed for removal of radio-cesium ({sup 137}Cs) from alkaline high-level wastes stored in underground tanks at the Hanford Site and Savannah River Site (SRS). As described in a previous report, tests conducted in Fiscal Year 1998 generally demonstrated performance meeting the requirements for cesium removal from the waste to be treated at the SRS. However, discrepancies in stripping behavior were shown to arise from unidentified differences ''in the batches of waste simulant employed for testing. Various effects such as solvent impurities, kinetics, contacting method, and counting method were eliminated as possible causes of the observed discrepancies. Tests in Fiscal Year 1999 reported herein confirmed the earlier suspicion that the simulants contained lipophilic anionic impurities. Extraction tests demonstrated that the impurities could be concentrated in the solvent, and by ES-MS in the negative-ion mode it was possible to

  9. The effect of impurities on linear and nonlinear absorption coefficient and refractive index of the spherical quantum dot four-level M-model the phenomenon of electromagnetically induced transparency

    NASA Astrophysics Data System (ADS)

    Damiri, H.; Askari, H. R.

    2017-01-01

    In this paper, the effect of impurities on the phenomenon of electromagnetically induced transparency in a spherical quantum dot with parabolic potential is examined. It is assumed that spherical quantum dot has configuration four levels model M. First, consider the polarization Z for light; rotating wave approximation approach, rotating coordinate system, as well as the density matrix approach, we examine the phenomenon of electromagnetically induced transparency in spherical quantum dot. Finally, with regard to impurities of the disorder, we review electromagnetically induced transparency and Changes resulting from the presence of impurities.

  10. Matrix Elimination Ion Chromatography Method for the Determination of Trace Levels of Anionic Impurities in High Purity Cesium Iodide

    PubMed Central

    Ayushi; Kumar, Sangita D.; Reddy, A.V.R.

    2012-01-01

    In the present study an ion chromatographic method based on matrix elimination has been developed for the determination of anionic impurities in high purity cesium iodide crystals. The presence of impurities has a detrimental effect on the characteristics of detectors based on cesium iodide crystals. In particular, oxygen-containing anions inhibit the resolving power of scintillators and decrease the optical absorption. The quantitative determination of anions (fluoride, chloride, bromide, nitrate, phosphate, and sulphate) simultaneously in the high-purity cesium iodide crystals has not been carried out before. The large concentration of iodide poses a challenge in the determination of anions (especially phosphate and sulphate); hence, matrix elimination is accomplished by adopting a sample pretreatment technique. The method is validated for linearity, accuracy, and precision. The limit of detection for different anions is in the range of 0.3–3 µg/g, and the relative standard deviation is in the range of 4–6% for the overall method. PMID:22291061

  11. The effects of pre-ionization on the impurity and x-ray level in a dense plasma focus device

    NASA Astrophysics Data System (ADS)

    Piriaei, D.; Yousefi, H. R.; Mahabadi, T. D.; Salar Elahi, A.; Ghoranneviss, M.

    2017-02-01

    In this study, the effects of pre-ionization on the reduction of the impurities and non-uniformities, the increased stability of the pinch plasma, the enhancement of the total hard x-ray yield, the plasmoid x-ray yield, and the current sheath dynamics of the argon gas at different pressures in a Mather type plasma focus device were investigated. For this purpose, different shunt resistors together with two x-ray detectors were used, and the data gathered from the x-ray signals showed that the optimum shunt resistor could cause the maximum total hard and plasmoid hard x-ray emissions. Moreover, in order to calculate the average speed of the current sheath, two axial magnetic probes were used. It was revealed that the pre-ionization could increase the whole range of the emitted x-rays and produce a more uniform current sheath layer, which moved faster, and this technique could lead to the reduction of the impurities, creating a more stabilized pinched plasma, which was capable of emitting more x-rays than the usual case without using pre-ionization.

  12. The Impact of Glyphosate, Its Metabolites and Impurities on Viability, ATP Level and Morphological changes in Human Peripheral Blood Mononuclear Cells

    PubMed Central

    Kwiatkowska, Marta; Jarosiewicz, Paweł; Michałowicz, Jaromir; Koter-Michalak, Maria; Huras, Bogumiła; Bukowska, Bożena

    2016-01-01

    The toxicity of herbicides to animals and human is an issue of worldwide concern. The present study has been undertaken to assess toxic effect of widely used pesticide—glyphosate, its metabolites: aminomethylphosphonic acid (AMPA) and methylphosphonic acid and its impurities: N-(phosphonomethyl)iminodiacetic acid (PMIDA), N-methylglyphosate, hydroxymethylphosphonic acid and bis-(phosphonomethyl)amine on human peripheral blood mononuclear cells (PBMCs). We have evaluated the effect of those compounds on viability, ATP level, size (FSC-A parameter) and granulation (SSC-A parameter) of the cells studied. Human peripheral blood mononuclear cells were exposed to different concentrations of glyphosate, its metabolites and impurities (0.01–10 mM) for 4 and 24 h. It was found that investigated compounds caused statistically significant decrease in viability and ATP level of PBMCs. The strongest changes in cell viability and ATP level were observed after 24 h incubation of PBMCs with bis-(phosphonomethyl)amine, and particularly PMIDA. Moreover, all studied compounds changed cell granularity, while PMIDA and bis-(phosphonomethyl)amine altered PBMCs size. It may be concluded that bis-(phosphonomethyl)amine, and PMIDA caused a slightly stronger damage to PBMCs than did glyphosate. Changes in the parameters studied in PBMCs were observed only at high concentrations of the compounds examined, which clearly shows that they may occur in this cell type only as a result of acute poisoning of human organism with these substances. PMID:27280764

  13. Deep Levels of Processing Elicit a Distinctiveness Heuristic: Evidence from the Criterial Recollection Task

    ERIC Educational Resources Information Center

    Gallo, David A.; Meadow, Nathaniel G.; Johnson, Elizabeth L.; Foster, Katherine T.

    2008-01-01

    Thinking about the meaning of studied words (deep processing) enhances memory on typical recognition tests, relative to focusing on perceptual features (shallow processing). One explanation for this levels-of-processing effect is that deep processing leads to the encoding of more distinctive representations (i.e., more unique semantic or…

  14. Deep Levels of Processing Elicit a Distinctiveness Heuristic: Evidence from the Criterial Recollection Task

    ERIC Educational Resources Information Center

    Gallo, David A.; Meadow, Nathaniel G.; Johnson, Elizabeth L.; Foster, Katherine T.

    2008-01-01

    Thinking about the meaning of studied words (deep processing) enhances memory on typical recognition tests, relative to focusing on perceptual features (shallow processing). One explanation for this levels-of-processing effect is that deep processing leads to the encoding of more distinctive representations (i.e., more unique semantic or…

  15. Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

    SciTech Connect

    Dagnelund, D.; Huang, Y. Q.; Buyanova, I. A.; Chen, W. M.; Tu, C. W.; Yonezu, H.

    2015-01-07

    By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.

  16. Potentially mutagenic impurities: analysis of structural classes and carcinogenic potencies of chemical intermediates in pharmaceutical syntheses supports alternative methods to the default TTC for calculating safe levels of impurities.

    PubMed

    Galloway, Sheila M; Vijayaraj Reddy, M; McGettigan, Katherine; Gealy, Robert; Bercu, Joel

    2013-08-01

    Potentially mutagenic impurities in new pharmaceuticals are controlled to levels with negligible risk, the TTC (threshold of toxicological concern, 1.5 μg/day for a lifetime). The TTC was based on the more potent rodent carcinogens, excluding the highly potent "cohort of concern" (COC; for mutagenic carcinogens these are N-nitroso, Aflatoxin-like, and azoxy structures). We compared molecules with DEREK "structural alerts" for mutagenicity used in drug syntheses with the mutagenic carcinogens in the Gold Carcinogenicity Potency Database. Data from 108 diverse synthetic routes from 13 companies confirm that many "alerting" or mutagenic chemicals are in structural classes with lower carcinogenic potency than those used to derive the TTC. Acceptable daily intakes can be established that are higher than the default TTC for many structural classes (e.g., mono-functional alkyl halides and certain aromatic amines). Examples of ADIs for lifetime and shorter-term exposure are given for chemicals of various potencies. The percentage of chemicals with DEREK alerts that proved mutagenic in the Ames test ranged from 36% to 83%, depending on structural class, demonstrating that such SAR analysis to "flag" potential mutagens is conservative. We also note that aromatic azoxy compounds need not be classed as COC, which was based on alkyl azoxy chemicals.

  17. The effectiveness and stability of impurity/defect interactions and their impact on minority carrier lifetime. Annual subcontract report, 1 August 1990--31 July 1991

    SciTech Connect

    Rozgonyi, G.A.; Shimura, F.; Buczkowski, A.; Zhon, T.Q.

    1991-12-01

    This report covers the investigation and understanding of electrical activity of ``clean`` and metallic impurity decorated defects. A heterostructure containing a controlled number of deliberately introduced misfit dislocations is used as a model system to simulate a variety of defect/impurity interactions in photovoltaic materials. In addition, a noncontact laser/microwave deep-level transient spectroscopy technique is applied to characterize the minority carrier lifetime and determine the energy levels of defects. 59 refs.

  18. Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR

    NASA Astrophysics Data System (ADS)

    Irmscher, K.; Pintilie, I.; Pintilie, L.; Schulz, D.

    2001-12-01

    6H-SiC bulk single crystals grown by physical vapor transport (PVT) were investigated by deep-level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). One of the observed deep level defects was identified as isolated tungsten on Si sites by EPR. The electron spin of {1}/{2} could be explained by W 5+ (5d 1). This is equivalent to the single positive charge state of a double donor when taking into account the Fermi level position in the n-type samples. The interpretation is also consistent with the DLTS detection of a W related deep level which showed a behavior of the capture of electrons and holes that hints at a double donor. In addition a tantalum related deep level is tentatively discussed. W and Ta were incorporated on electrically active sites in 6H-SiC only in low concentrations (2-4×10 14 cm -3) during crystal growth by PVT.

  19. Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

    NASA Astrophysics Data System (ADS)

    Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mandal, Krishna C.

    2014-06-01

    Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z1/2, EH5, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z1/2 defects was found to be 1.7 × 1013 cm-3. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm2 large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.

  20. Current-mode deep level transient spectroscopy of a semiconductor nanowire field-effect transistor

    NASA Astrophysics Data System (ADS)

    Isakov, Ivan; Sourribes, Marion J. L.; Warburton, Paul A.

    2017-09-01

    One of the main limiting factors in the carrier mobility in semiconductor nanowires is the presence of deep trap levels. While deep-level transient spectroscopy (DLTS) has proved to be a powerful tool in analysing traps in bulk semiconductors, this technique is ineffective for the characterisation of nanowires due to their very small capacitance. Here, we introduce a new technique for measuring the spectrum of deep traps in nanowires. In current-mode DLTS ("I-DLTS"), the temperature-dependence of the transient current through a nanowire field-effect transistor in response to an applied gate voltage pulse is measured. We demonstrate the applicability of I-DLTS to determine the activation energy and capture cross-sections of several deep defect states in zinc oxide nanowires. In addition to characterising deep defect states, we show that I-DLTS can be used to measure the surface barrier height in semiconductor nanowires.

  1. Ruthenium related deep-level defects in n-type GaAs

    NASA Astrophysics Data System (ADS)

    Naz, Nazir A.; Qurashi, Umar S.; Majid, A.; Zafar Iqbal, M.

    2009-12-01

    Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in n-type Ru-doped GaAs grown by low-pressure metal-organic chemical-vapor deposition (LP-MOCVD). DLTS scans over a wide temperature range (12-470 K) reveal two prominent deep-level peaks associated with Ru, when compared with control samples with no deliberate Ru-doping. The well-known mid-gap defect EL2 is also observed in these scans. The Ru-related deep levels, Ru1 and Ru2, correspond to energy positions Ec-0.46 eV and Ec-0.57 eV in the upper-half-bandgap of GaAs. No prominent deep levels associated with Ru are observed in the lower half-bandgap in the injection DLTS spectra; only the three inadvertent levels already present in the as-grown, control material are observed in these spectra. Although a possible Ru-related peak may be present with a rather small concentration in these injection DLTS spectra, it is difficult to clearly identify this peak also present in the control (as-grown, without Ru) samples at a closely similar position. Interestingly, doping with Ru reveals an interesting significant suppression of the pre-existing deep levels, including EL2. Detailed emission rate signatures are presented for the Ru-related deep levels and analyzed to obtain the relevant deep-level characteristics. Both Ru1 and Ru2 are found to show strong dependence on electric field, as demonstrated by the shift in the corresponding DLTS peak positions with the applied reverse bias during electron emission.

  2. Identification of deep levels in liquid-encapsulation Czochralski-grown Fe- and Zn-doped InP: A proof of the nonexistence of a Fe4 + /Fe3 + donor level

    NASA Astrophysics Data System (ADS)

    Wolf, T.; Drews, D.; Scheffler, H.; Bimberg, D.; Mosel, F.; Kipfer, P.; Müller, G.

    1993-01-01

    Deep levels in liquid-encapsulation Czochralski (LEC) grown p-type InP:Fe codoped with Zn have been investigated by means of temperature-dependent Hall-effect (TDH), deep-level transient spectroscopy (DLTS), calorimetric absorption spectroscopy, and electron spin resonance measurements. Although a dominant deep hole trap is revealed both by DLTS and TDH measurements in the vicinity of the valence band edge at EV+0.2 eV, the spectroscopic analysis unambiguously invalidates previous speculations on the existence of a second energy level of the isolated iron impurity in the band gap of InP, i.e., a Fe4+/Fe3+ donor level. From the axial concentration profile and a comparison with a LEC-grown p-type InP crystal doped with Zn only it seems that the trap is not even iron-related in contrast to tentative assignments often found in the literature. Native or Zn-related defects which depend on the particular growth conditions used are assumed to account for this level.

  3. Density and energy level of a deep-level Mg acceptor in 4H-SiC

    NASA Astrophysics Data System (ADS)

    Matsuura, Hideharu; Morine, Tatsuya; Nagamachi, Shinji

    2015-01-01

    Reliably determining the densities and energy levels of deep-level dominant acceptors in heavily doped wide-band-gap semiconductors has been a topic of recent discussion. In these discussions, the focus is on both Hall scattering factors for holes and distribution functions for acceptors. Mg acceptor levels in 4H-SiC seem to be deep, and so here the electrical properties of Mg-implanted 4H-SiC layers are studied by measuring Hall effects. The obtained Hall scattering factors are not reliable because they drop to less than 0.5 at high measurement temperatures. Moreover, the Fermi-Dirac distribution function is unsuitable for examining Mg acceptors because the obtained acceptor density is much higher than the concentration of implanted Mg atoms. However, by using a distribution function that includes the influence of the excited states of a deep-level acceptor, the density and energy level of Mg acceptors can be reliably determined.

  4. Interactions of structural defects with metallic impurities in multicrystalline silicon

    SciTech Connect

    McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

    1997-04-01

    Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L{sub n} values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions.

  5. Impure placebo is a useless concept.

    PubMed

    Louhiala, Pekka; Hemilä, Harri; Puustinen, Raimo

    2015-08-01

    Placebos are allegedly used widely in general practice. Surveys reporting high level usage, however, have combined two categories, 'pure' and 'impure' placebos. The wide use of placebos is explained by the high level usage of impure placebos. In contrast, the prevalence of the use of pure placebos has been low. Traditional pure placebos are clinically ineffective treatments, whereas impure placebos form an ambiguous group of diverse treatments that are not always ineffective. In this paper, we focus on the impure placebo concept and demonstrate problems related to it. We also show that the common examples of impure placebos are not meaningful from the point of view of clinical practice. We conclude that the impure placebo is a scientifically misleading concept and should not be used in scientific or medical literature. The issues behind the concept, however, deserve serious attention in future research.

  6. Deep level defect studies in semi-insulating 4H- and 6H-silicon carbide using optical admittance spectroscopy

    NASA Astrophysics Data System (ADS)

    Lee, Wonwoo

    The objective of this study is to determine the deep vanadium defect levels in semi-insulating 4H- and 6H- silicon carbide using optical admittance spectroscopy. Also infrared spectroscopy and electron paramagnetic resonance spectroscopy are conducted to support the evidence of vanadium donor and acceptor levels obtained from OAS measurements. Vanadium acts as an amphoteric impurity in silicon carbide with a V3+/4+ acceptor level and V4+/5+ donor level. Although the value for the donor level is well established, the V3+/4+ defect level remains controversial. OAS shows that the vanadium donor level is isolated near Ec-1.7 eV, and the vanadium acceptor level is located at Ec-0.75 eV at a cubic site and Ec-0.94 eV at a hexagonal site in 4H-SiC, while the vanadium donor level of 6H-SiC samples is about Ec-1.5 eV. The acceptor levels of 6H-SiC were assigned to Ec-0.67 eV, E c -0.70 eV at two cubic sites, and Ec-0.87 eV at a hexagonal site. IR spectra demonstrated that the signatures of the vanadium V 3+ and V4+ charge states are present in the samples. EPR and photo-induced EPR are used to identify the V3+/4+ and V4+/5+ levels as well as the V3+ and V 4+ charge states. EPR spectra represent both V3+ and V4+ in 4H- and 6H samples consistent with FTIR data. EPR and photo-induced EPR suggest that the va nadium acceptor level is between 0.7 eV and 0.86 eV, while the donor level is near Ec-1.5 eV in 6H-SiC. The donor level of 4H-SiC is located at Ec-1.6 eV. Thus, the data obtained from EPR and FTIR support the assignment of the vanadium defect levels determined by OAS. Vanadium complexes induced by other elements such as titanium, hydrogen, and nitrogen atoms are also observed in OAS spectra and will be discussed in the text.

  7. Effects of irradiation and annealing on deep levels in rhodium-doped p-GaAs grown by metal-organic chemical-vapor deposition

    SciTech Connect

    Naz, Nazir A.; Qurashi, Umar S.; Iqbal, M. Zafar

    2011-06-01

    This paper reports a detailed study of the effects of irradiation and thermal annealing on deep levels in Rh-doped p-type GaAs grown by low-pressure metal-organic chemical-vapor deposition, using deep level transient spectroscopy (DLTS) technique. It is found upon irradiation with alpha particles that, in addition to the radiation-induced defect peaks, all the Rh-related peaks observed in majority, as well as minority-carrier emission DLTS scans show an increase in their respective concentrations. The usually observed {alpha}-induced defects H{alpha}1, H{alpha}2, and H{alpha}3 are found to have lower introduction rates in Rh-doped samples, as compared to reference samples (not doped with Rh). Alpha-irradiation has been found to decompose the two minority carrier emitting bands (one at low temperature {approx}150 K and the other at {approx}380 K) observed prior to irradiation into distinct peaks corresponding to deep levels Rh1 and Rh2 and EL2 and Rh3, respectively. A similar effect is also observed for the majority-carrier emitting band composed of hole emission from deep levels RhA and RhB, which separate out well upon irradiation. Further, from the double-correlation DLTS measurements, the emission rates of carriers from the radiation-enhanced peaks corresponding to deep levels Rh1, Rh2, Rh3, and RhC were found to be dependent on junction electric field. For RhC, the field dependence data have been analyzed in terms of the Poole-Frenkel model employing a 3-dimensional Coulomb potential with q = 2e (electronic charge). Temperature dependence of the hole capture cross-sections of the levels RhA and RhC was also studied quantitatively. The observed dependence of the hole capture cross-section of RhC on temperature can be interpreted in terms of multiphonon capture model, yielding a capture barrier of 0.2 eV and {sigma}({infinity}) = 2.3 x 10{sup -14} cm{sup 2}. The results of irradiation and isochronal thermal annealing study, in combination with the theoretical

  8. Effects of irradiation and annealing on deep levels in rhodium-doped p-GaAs grown by metal-organic chemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Naz, Nazir A.; Qurashi, Umar S.; Iqbal, M. Zafar

    2011-06-01

    This paper reports a detailed study of the effects of irradiation and thermal annealing on deep levels in Rh-doped p-type GaAs grown by low-pressure metal-organic chemical-vapor deposition, using deep level transient spectroscopy (DLTS) technique. It is found upon irradiation with alpha particles that, in addition to the radiation-induced defect peaks, all the Rh-related peaks observed in majority, as well as minority-carrier emission DLTS scans show an increase in their respective concentrations. The usually observed α-induced defects Hα1, Hα2, and Hα3 are found to have lower introduction rates in Rh-doped samples, as compared to reference samples (not doped with Rh). Alpha-irradiation has been found to decompose the two minority carrier emitting bands (one at low temperature ˜150 K and the other at ˜380 K) observed prior to irradiation into distinct peaks corresponding to deep levels Rh1 and Rh2 and EL2 and Rh3, respectively. A similar effect is also observed for the majority-carrier emitting band composed of hole emission from deep levels RhA and RhB, which separate out well upon irradiation. Further, from the double-correlation DLTS measurements, the emission rates of carriers from the radiation-enhanced peaks corresponding to deep levels Rh1, Rh2, Rh3, and RhC were found to be dependent on junction electric field. For RhC, the field dependence data have been analyzed in terms of the Poole-Frenkel model employing a 3-dimensional Coulomb potential with q = 2e (electronic charge). Temperature dependence of the hole capture cross-sections of the levels RhA and RhC was also studied quantitatively. The observed dependence of the hole capture cross-section of RhC on temperature can be interpreted in terms of multiphonon capture model, yielding a capture barrier of 0.2 eV and σ(∞) = 2.3 × 10-14 cm2. The results of irradiation and isochronal thermal annealing study, in combination with the theoretical analysis of the field dependence of hole emission data

  9. Elemental Impurities in Pharmaceutical Excipients.

    PubMed

    Li, Gang; Schoneker, Dave; Ulman, Katherine L; Sturm, Jason J; Thackery, Lisa M; Kauffman, John F

    2015-12-01

    Control of elemental impurities in pharmaceutical materials is currently undergoing a transition from control based on concentrations in components of drug products to control based on permitted daily exposures in drug products. Within the pharmaceutical community, there is uncertainty regarding the impact of these changes on manufactures of drug products. This uncertainty is fueled in part by a lack of publically available information on elemental impurity levels in common pharmaceutical excipients. This paper summarizes a recent survey of elemental impurity levels in common pharmaceutical excipients as well as some drug substances. A widely applicable analytical procedure was developed and was shown to be suitable for analysis of elements that are subject to United States Pharmacopoeia Chapter <232> and International Conference on Harmonization's Q3D Guideline on Elemental Impurities. The procedure utilizes microwave-assisted digestion of pharmaceutical materials and inductively coupled plasma mass spectrometry for quantitative analysis of these elements. The procedure was applied to 190 samples from 31 different excipients and 15 samples from eight drug substances provided through the International Pharmaceutical Excipient Council of the Americas. The results of the survey indicate that, for the materials included in the study, relatively low levels of elemental impurities are present. © 2015 The Authors. Journal of Pharmaceutical Sciences published by Wiley Periodicals, Inc. and the American Pharmacists Association.

  10. Deep levels in semi-insulating LEC GaAs before and after silicon implantation

    SciTech Connect

    Dindo, S.; Abdel-Motaleb, I.; Lowe, K.; Tang, W.; Young, L.

    1985-11-01

    The deep trapping levels present before ion implantation of silicon into the semi-insulating LEC GaAs starting material were investigated using optical transient current spectroscopy (OTCS). MESFET channel current deep level transient spectroscopy (DLTS) was used for the implanted material. With a silicon nitride layer used t encapsulate the GaAs for postimplantation annealing and with implantation directly into the GaAs, it was found tha of seven or more deep levels seen in the semi-insulating substrate prior to silicon implantation only the level believed to be EL12 remained. On implanting through a thin Si/sub 3/N/sub 4/ encapsulating layer and annealing under Si/sub 3/N/sub 4/, only EL2 was found. With a silicon dioxide layer as an encapsulant, two traps remained and two apparently unreported levels appeared.

  11. Methods of measuring water levels in deep wells

    USGS Publications Warehouse

    Garber, M.S.; Koopman, F. C.

    1968-01-01

    Accurate measurement of water levels deeper than 1,000 feet in wells requires specialized equipment. Corrections for stretch and thermal expansion of measuring tapes must be considered, and other measuring devices must be calibrated periodically. Bore-hole deviation corrections also must be made. Devices for recording fluctuation of fluid level usually require mechanical modification for use at these depths. A multichannel recording device utilizing pressure transducers has been constructed. This device was originally designed to record aquifer response to nearby underground nuclear explosions but can also be used for recording data from multi-well pumping tests. Bottom-hole recording devices designed for oil-field use have been utilized in a limited manner. These devices were generally found to lack the precision required, in ground-water investigations at the Nevada Test Site but may be applicable in other areas. A newly developed bottom-hole recording pressure gauge of improved accuracy has been used with satisfactory results.

  12. Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies

    NASA Astrophysics Data System (ADS)

    Mannan, Mohammad A.; Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mandal, Krishna C.

    2016-04-01

    Deep levels were investigated by the capacitance mode deep-level transient spectroscopy (C-DLTS) on 4H-SiC Schottky barrier diodes fabricated on 50 μm-thick n-type 4HSiC epitaxial layers. C-DLTS scans from 80 K to 800 K revealed the presence of Ti(c), Z1/2, EH5, and EH6/7 defect levels in the energy range from 0.17 to 1.6 eV below the conduction band edge. The annealing out of primary defects and generation of secondary defects were investigated by systematic and thorough C-DLTS studies from prior and subsequent isochronal annealing in the temperature range from 100 °C to 800 °C. The capture cross-section of Ti(c) was observed to decrease up to 400 °C and remained unchanged at higher annealing temperatures. Defect densities were shown to decrease up to 200 °C and gradually increase at higher temperatures. The Z1/2 and EH6/7 defect parameters showed similar variation for the temperature range studied. The thermal evolutions of these deep levels in n-type 4H-SiC epitaxial layers are analyzed and discussed for the first time.

  13. Comparative study of deep levels in HVPE and MOCVD GaN by combining O-DLTS and pulsed photo-ionization spectroscopy

    NASA Astrophysics Data System (ADS)

    Pavlov, J.; Čeponis, T.; Gaubas, E.; Meskauskaite, D.; Reklaitis, I.; Vaitkus, J.; Grigonis, R.; Sirutkaitis, V.

    2015-12-01

    Operational characteristics of sensors made of GaN significantly depend on technologically introduced defects acting as rapid traps of excess carriers which reduce charge collection efficiency of detectors. In order to reveal the prevailing defects in HVPE and MOCVD grown GaN, the carrier lifetime and photo-ionization spectra have been simultaneously measured by using microwave probed photo-conductivity transient technique. Several traps ascribed to impurities as well as vacancy and anti-site type defects have been identified in HVPE GaN material samples by combining photo-ionization and electron spin resonance spectroscopy. The optical deep level transient spectroscopy technique has been applied for spectroscopy of the parameters of thermal emission from the traps ascribed to technological defects in the Schottky barrier terrace structures fabricated on MOCVD GaN.

  14. Method for detecting trace impurities in gases

    DOEpatents

    Freund, Samuel M.; Maier, II, William B.; Holland, Redus F.; Beattie, Willard H.

    1981-01-01

    A technique for considerably improving the sensitivity and specificity of infrared spectrometry as applied to quantitative determination of trace impurities in various carrier or solvent gases is presented. A gas to be examined for impurities is liquefied and infrared absorption spectra of the liquid are obtained. Spectral simplification and number densities of impurities in the optical path are substantially higher than are obtainable in similar gas-phase analyses. Carbon dioxide impurity (.about.2 ppm) present in commercial Xe and ppm levels of Freon 12 and vinyl chloride added to liquefied air are used to illustrate the method.

  15. Method for detecting trace impurities in gases

    SciTech Connect

    Beattie, W.H.; Freund, S.M.; Holland, R.F.; Maier, W.B.

    1981-04-28

    A technique for considerably improving the sensitivity and specificity of infrared spectrometry as applied to quantitative determination of trace impurities in various carrier or solvent gases is presented. A gas to be examined for impurities is liquefied and infrared absorption spectra of the liquid are obtained. Spectral simplification and number densities of impurities in the optical path are substantially higher than are obtainable in similar gas-phase analyses. Carbon dioxide impurity (*2 ppm) present in commercial xe and ppm levels of freon 12 and vinyl chloride added to liquefied air are used to illustrate the method.

  16. Method for detecting trace impurities in gases

    DOEpatents

    Freund, S.M.; Maier, W.B. II; Holland, R.F.; Beattie, W.H.

    A technique for considerably improving the sensitivity and specificity of infrared spectrometry as applied to quantitative determination of trace impurities in various carrier or solvent gases is presented. A gas to be examined for impurities is liquefied and infrared absorption spectra of the liquid are obtained. Spectral simplification and number densities of impurities in the optical path are substantially higher than are obtainable in similar gas-phase analyses. Carbon dioxide impurity (approx. 2 ppM) present in commercial Xe and ppM levels of Freon 12 and vinyl chloride added to liquefied air are used to illustrate the method.

  17. Impact of proton irradiation on deep level states in n-GaN

    SciTech Connect

    Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

    2013-07-22

    Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10{sup 13} cm{sup −2}. The proton irradiation introduced two traps with activation energies of E{sub C} - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E{sub C} - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence.

  18. Analytical advances in pharmaceutical impurity profiling.

    PubMed

    Holm, René; Elder, David P

    2016-05-25

    Impurities will be present in all drug substances and drug products, i.e. nothing is 100% pure if one looks in enough depth. The current regulatory guidance on impurities accepts this, and for drug products with a dose of less than 2g/day identification of impurities is set at 0.1% levels and above (ICH Q3B(R2), 2006). For some impurities, this is a simple undertaking as generally available analytical techniques can address the prevailing analytical challenges; whereas, for others this may be much more challenging requiring more sophisticated analytical approaches. The present review provides an insight into current development of analytical techniques to investigate and quantify impurities in drug substances and drug products providing discussion of progress particular within the field of chromatography to ensure separation of and quantification of those related impurities. Further, a section is devoted to the identification of classical impurities, but in addition, inorganic (metal residues) and solid state impurities are also discussed. Risk control strategies for pharmaceutical impurities aligned with several of the ICH guidelines, are also discussed. Copyright © 2015 Elsevier B.V. All rights reserved.

  19. Origin of deep level defect related photoluminescence in annealed InP

    NASA Astrophysics Data System (ADS)

    Zhao, Youwen; Dong, Zhiyuan; Miao, Shanshan; Deng, Aihong; Yang, Jun; Wang, Bo

    2006-12-01

    Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS), and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3eV has been observed in the InP sample annealed in iron phosphide ambient. Both the 1.3eV PL emission and a defect at EC-0.18eV correlate with a divacancy detected in the annealed InP sample. The results make a divacancy defect and related property identified in the annealed InP.

  20. Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy

    DTIC Science & Technology

    2005-03-01

    To date, these energy levels have not been systematically measured (i.e. temperature dependent Hall ( TDH ) and deep level transient spectroscopy...Material I.D. Ref. Donors 0.06 0.018 0.06 0.06 e- (1 MeV) TDH undoped HVPE n≈1017 VN SiGa 33 Acceptors deep e- (1 MeV) TDH " NI 33...qualitative agreement with the linear carrier removal model of equation II-33. More recently, TDH measurements were reported for the same type of GaN sample

  1. Identification, isolation and characterization of new impurity in rabeprazole sodium.

    PubMed

    Rao, P Sreenivasa; Ray, Uttam Kumar; Gupta, P Badarinadh; Rao, D V N Srinivasa; Islam, Aminul; Rajput, Pradeep; Mukkanti, K

    2010-08-01

    Rabeprazole sodium [1] is a proton pump inhibitor, used as an antiulcerative. During the manufacturing of rabeprazole sodium, we observed an unknown impurity at levels 0.05-0.1% in HPLC analysis along with the known potential impurities. This new unknown impurity was isolated using preparative liquid chromatography. Based on the complete spectral analysis ((1)H NMR, (13)C NMR, DEPT, Mass and IR), this new impurity was designated as 2-[[(3-methyl-4-(methylthio)-2-pyridinyl)methyl]sulfinyl]-1H-benzimidazole (methylthio impurity of rabeprazole). Impurity isolation, structure elucidation and probable formation mechanism was discussed. Copyright (c) 2010 Elsevier B.V. All rights reserved.

  2. Identification of process related trace level impurities in the actinide decorporation agent 3,4,3-LI(1,2-HOPO): Nozzle-skimmer fragmentation via ESI LC-QTOFMS.

    PubMed

    Panyala, Nagender R; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J

    2014-11-01

    3,4,3-LI(1,2-HOPO) is a chelating ligand and decorporation agent that can remove radioactive lanthanides and actinides from the body. Identification of trace impurities in drug samples is gaining much interest due to their significant influence on drug activity. In this study, trace impurities were detected in manufactured lots of 3,4,3-LI(1,2-HOPO) by a developed method of liquid chromatography coupled with photo-diode array UV detection and electrospray ionization-quadrupole time of flight mass spectrometry (LC-QTOFMS), via induced-in-source or collision-induced mass fragmentation (nozzle-skimmer fragmentation). Molecular ions were fragmented within the nozzle-skimmer region of electrospray ionization (ESI) mass spectrometer equipped with a Time of Flight detector. Eight major (detected at levels higher than a 0.1% threshold) and seven minor trace impurities were identified. The respective structures of these impurities were elucidated via analysis of the generated fragment ions using mass fragmentation and elemental composition software. Proposed structures of impurities were further confirmed via isotopic modeling.

  3. Identification of process related trace level impurities in the actinide decorporation agent 3,4,3-LI(1,2-HOPO): Nozzle–skimmer fragmentation via ESI LC–QTOFMS

    DOE PAGES

    Panyala, Nagender R.; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J.

    2014-08-12

    We report that 3,4,3-LI(1,2-HOPO) is a chelating ligand and decorporation agent that can remove radioactive lanthanides and actinides from the body. Identification of trace impurities in drug samples is gaining much interest due to their significant influence on drug activity. In this study, trace impurities were detected in manufactured lots of 3,4,3-LI(1,2-HOPO) by a developed method of Liquid Chromatography coupled with photo-diode array UV detection and Electrospray Ionization-Quadrupole Time of Flight Mass spectrometry (LC-QTOFMS), via induced-in-source or collision-induced mass fragmentation (Nozzle-Skimmer Fragmentation). Molecular ions were fragmented within the nozzle-skimmer region of electrospray ionization (ESI) mass spectrometer equipped with a Timemore » of Flight detector. Eight major (detected at levels higher than a 0.1% threshold) and seven minor trace impurities were identified. The respective structures of these impurities were elucidated via analysis of the generated fragment ions using mass fragmentation and elemental composition software. Proposed structures of impurities were further confirmed via isotopic modeling.« less

  4. Identification of process related trace level impurities in the actinide decorporation agent 3,4,3-LI(1,2-HOPO): Nozzle–skimmer fragmentation via ESI LC–QTOFMS

    SciTech Connect

    Panyala, Nagender R.; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J.

    2014-08-12

    We report that 3,4,3-LI(1,2-HOPO) is a chelating ligand and decorporation agent that can remove radioactive lanthanides and actinides from the body. Identification of trace impurities in drug samples is gaining much interest due to their significant influence on drug activity. In this study, trace impurities were detected in manufactured lots of 3,4,3-LI(1,2-HOPO) by a developed method of Liquid Chromatography coupled with photo-diode array UV detection and Electrospray Ionization-Quadrupole Time of Flight Mass spectrometry (LC-QTOFMS), via induced-in-source or collision-induced mass fragmentation (Nozzle-Skimmer Fragmentation). Molecular ions were fragmented within the nozzle-skimmer region of electrospray ionization (ESI) mass spectrometer equipped with a Time of Flight detector. Eight major (detected at levels higher than a 0.1% threshold) and seven minor trace impurities were identified. The respective structures of these impurities were elucidated via analysis of the generated fragment ions using mass fragmentation and elemental composition software. Proposed structures of impurities were further confirmed via isotopic modeling.

  5. Identification of process related trace level impurities in the actinide decorpration agent 3,4,3-LI(1,2-HOPO): Nozzle-Skimmer fragmentation via ESI LC-QTOFMS

    PubMed Central

    Panyala, Nagender R.; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J.

    2014-01-01

    3,4,3-LI(1,2-HOPO) is a chelating ligand and decorporation agent that can remove radioactive lanthanides and actinides from the body. Identification of trace impurities in drug samples is gaining much interest due to their significant influence on drug activity. In this study, trace impurities were detected in manufactured lots of 3,4,3-LI(1,2-HOPO) by a developed method of Liquid Chromatography coupled with photo-diode array UV detection and Electrospray Ionization-Quadrupole Time of Flight Mass spectrometry (LC-QTOFMS), via induced-in-source or collision-induced mass fragmentation (Nozzle-Skimmer Fragmentation). Molecular ions were fragmented within the nozzle-skimmer region of electrospray ionization (ESI) mass spectrometer equipped with a Time of Flight detector. Eight major (detected at levels higher than a 0.1% threshold) and seven minor trace impurities were identified. The respective structures of these impurities were elucidated via analysis of the generated fragment ions using mass fragmentation and elemental composition software. Proposed structures of impurities were further confirmed via isotopic modeling. PMID:25165012

  6. Revised role for the Poole--Frenkel effect in deep-level characterization

    SciTech Connect

    Buchwald, W.R.; Johnson, N.M.

    1988-07-15

    The Poole--Frenkel effect is commonly used to decide between donorlike and acceptorlike electronic character for deep-level defects in semiconductors. However, there exists at least one defect, the EL2 center in GaAs, which is experimentally established to be a deep donor and yet does not exhibit the classical Poole--Frenkel effect for thermal emission of electrons. In this communication it is proposed that the existence of another well-documented deep-level phenomenon can suppress the Poole--Frenkel effect. Namely, a thermally activated capture cross section, which identifies an energy barrier to carrier capture and is commonly ascribed to a multiphonon emission process, introduces additional mechanisms which can alter the predominance of the Coulombic potential of the emitted carrier so as to suppress the electric-field-induced barrier lowering. A simple one-dimensional model is analyzed to qualitatively illustrate the combined phenomena.

  7. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides.

    PubMed

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G; Wei, Su-Huai; Liu, Feng

    2015-09-18

    Developing practical approaches to effectively reduce the amount of deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this still remains a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for transition-metal dichalcogenides, such as MoSe_{2} and WSe_{2}, where anion vacancies are the most abundant defects that can induce deep levels, the deep levels can be effectively suppressed in Mo_{1-x}W_{x}Se_{2} alloys at low W concentrations. This surprising phenomenon is associated with the fact that the band edge energies can be substantially tuned by the global alloy concentration, whereas the defect level is controlled locally by the preferred locations of Se vacancies around W atoms. Our findings illustrate a concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.

  8. Correlation of a generation-recombination center with a deep level trap in GaN

    SciTech Connect

    Nguyen, X. S. E-mail: elecsj@nus.edu.sg; Lin, K.; Zhang, Z.; Arehart, A. R.; Ringel, S. A.; McSkimming, B.; Speck, J. S.; Fitzgerald, E. A.; Chua, S. J. E-mail: elecsj@nus.edu.sg

    2015-03-09

    We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E{sub c} − 0.26 eV, E{sub c} − 0.59 eV, and E{sub c} − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E{sub c} − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E{sub c} − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials.

  9. Unified model for impurity diffusion in silicon

    NASA Astrophysics Data System (ADS)

    Orlowski, M.

    1988-10-01

    A new theoretical framework for impurity diffusion in silicon is proposed. The basic mechanism employed here is the point defect-impurity pair diffusion as presented by Mulvaney and Richardson [Appl. Phys. Lett. 51, 1439 (1987)] in a generalized description of the impurity-interstitial model by Morehead and Lever [Appl. Phys. Lett. 48, 151 (1986)]. The model consists of coupled equations for the impurities and point defects, in which all species including structural defects (major new process variables) are treated on the same footing. Among other things, the model accounts for long-range point defect mediated enhancement and retardation of the diffusion. The essential features of the present formalism are the new equations for interstitials and vacancies which provide the major coupling between the impurities apart from the coupling via the Fermi level. This approach allows, for the first time, a consistent analysis and exploration of the diffusion phenomena step by step on various levels of complexity.

  10. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    SciTech Connect

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  11. Differential isothermal capacitance transient spectroscopy for the studies of deep levels in semiconductors

    NASA Astrophysics Data System (ADS)

    Suno, K.; Yoshino, J.; Okamoto, Y.; Morimoto, J.; Miyakawa, T.

    1997-05-01

    Differential isothermal capacitance transient spectroscopy (DICTS) and normalized isothermal capacitance transient spectroscopy (NICTS) were proposed to improve the resolution of the conventional isothermal capacitance transient spectroscopy (ICTS) which could characterize the deep levels in semiconductors isothermally. The resolution of the methods was studied for the closely spaced energy levels by the numerical simulation. Though the resolvable emission rate ratio R (R=λ2/λ1, where λ1 and λ2 are each thermal emission rate for two levels) of ICTS was around 5, R of DICTS was around 4. Moreover, R of NICTS reached 3.5 which is less than that of any other conventional methods. The error ratio of the estimation is almost the same as ICTS. The new method was applied to study the deep levels in a Si:Au system as an example and found two closely spaced energy levels explicitly.

  12. DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Madhu, K. V.; Kulkarni, S. R.; Ravindra, M.; Damle, R.

    2007-01-01

    Commercial npn transistor (2N 2219A) irradiated with 50 MeV Li 3+-ions with fluences ranging from 3.1 × 10 13 ions cm -2 to 12.5 × 10 13 ions cm -2, is studied for radiation induced gain degradation and minority carrier trap levels or recombination centers. The properties such as activation energy, trap concentration and capture cross section of induced deep levels are studied by deep level transient spectroscopy (DLTS) technique. Minority carrier trap levels with energies ranging from 0.237 eV to 0.591 eV were observed in the base-collector junction of the transistor. In situ I- V measurements were made to study the gain degradation as a function of ion fluence. Ion induced energy levels result in increase in the base current through Shockley Read Hall (SRH) or multi-phonon recombination and subsequent transistor gain degradation.

  13. Electric-field gradient characterization at 181Ta impurities in sapphire single crystals

    NASA Astrophysics Data System (ADS)

    Rentería, M.; Darriba, G. N.; Errico, L. A.; Muñoz, E. L.; Eversheim, P. D.

    2005-07-01

    We report Perturbed-Angular-Correlation (PAC) experiments on corundum Al2O3 single crystals implanted with 181Hf/181Ta ions at the ISKP at Bonn and measured at La Plata with high efficiency and time-resolution. The magnitude, asymmetry, and orientation (with respect to the crystalline axes) of the electric-field gradient (EFG) tensor were determined measuring the spin-rotation curves as a function of different orientations of the single crystals relative to the detector system. These results are analyzed in the framework of point-charge model and ab initio Full-Potential Linearized-Augmented Plane Wave calculations, and compared with EFG results coming from PAC experiments with 111In/111Cd impurities. This combined study enables the determination of lattice relaxations induced by the presence of the impurity and the state of charge of a deep impurity donor level in the band gap of the semiconductor.

  14. Energy Levels of a Hydrogenic Impurity in Gallium ARSENIDE/GALLIUM(1-X) Aluminum(x) Arsenide Multiple-Quantum Structures in a Magnetic Field

    NASA Astrophysics Data System (ADS)

    Nguyen, Nghia Trong

    Energy levels of a hydrogenic impurity (Si) in the (GaAs/Ga_{1-x}Al_{x }As) quantum-well systems with and without an applied magnetic field perpendicular to the interfaces have been studied theoretically. A variational approach employing the envelope wavefunction approximation has been used. The envelope wavefunction is chosen to be a product of a combination (mixing) of one or more confined states of a free electron in the one dimensional quantum-well potential considered with Gaussian trial functions. First, the study is focused on a coupled double -quantum-well model which serves as a bridge between the single-, and multiple-quantum-well structures. It is found that the binding energies depend significantly upon the well width, the barrier width, the location of the impurity, and the magnetic field. A comparison with recent experiments demonstrates that intersubband mixing plus the difference in electron effective-masses in the two semiconductors should be included in the calculations. Next, the problem is extended to the cases of multiple-quantum-well model with narrow barriers. For the doped well at the center of the structure in zero field, the calculated binding energies do not change in any significant way beyond 15 periods for either of two structures investigated (with periodicities of 80A well-9A barrier and 40A well -9A barrier). Calculations are also performed for superlattices with 15 periods in the presence of the magnetic field. Very good agreement is obtained in comparing the results with recent measurements. For the doped well at various locations within the structure, the outer boundary of the finite superlattice (15 wells) has significant effect on the binding energies, especially when the doped well is less than 4 wells away from the boundary. Finally, in a departure from above approach, we have attempted to simplify the problem by subsumming the entire effect of the superlattice periodic potential in the electron effective-mass (miniband

  15. Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Kawahara, Toshio; Ohbuchi, Yasuhiro; Tabuchi, Norikazu; Morimoto, Jun; Goto, Hideo; Ido, Toshiyuki

    2000-12-01

    Sb-doped ZnSe samples were deposited on the (001)GaAs substrate by metalorganic vapor-phase epitaxy (MOVPE). Isothermal capacitance transient spectroscopy (ICTS) and spectral analysis of deep-level transient spectroscopy (SADLTS) were used to characterize deep levels of Sb-doped ZnSe. The p-type sample grown by MOVPE at 490°C in the darkness shows three ICTS peaks. Three deep levels were observed in the N-doped ZnSe deposited by MOVPE. Using the SADLTS, we can estimate the activation energy and the capture-cross section distributions of that hole traps. We also examined samples that were photoassist-deposited at lower temperature. The non-doped ZnSe thin films were also measured to check the effects of light irradiation during the deposition. We could get only n-type samples and the light irradiation generates the new level of the electron traps. Sb doping generates other new levels. The levels that correspond to trap E1 in the light-irradiated Sb-doped samples are constructed from two adjacent levels in SADLTS, and one new level near trap E1 can be observed in SADLTS.

  16. Effects of EL2 deep level in GaAs photoconductive switch

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Liu, Rui; Wang, Jing-li

    2009-07-01

    The semi-insulating (SI) GaAs photoconductive switch is considered to be the higher efficient THz source recently. In order to make good use of the photoconductive switch to generate the more efficient THz wave, SI-GaAs photoconductive switch's working mechanism is discussed from the respect of EL2 deep level in this paper. It has three operation modes. The SI-GaAs material has many kinds of intrinsic-defects. One of the more notable defects is EL2 deep level. The EL2 level can become an impactful electron trap in the linear operation mode; The EL2 level is also the necessary condition of nonlinear (also known as Lock-on) operation mode emerging in III-V semiconductors such as GaAs and InP. At the same time, the compound operation mode is substantial related with the conversion from neutral energy level EL20 to metastable energy level EL2* and singly ionized energy level EL2+ in semiconductor under the light. So in this paper the effects of EL2 deep level are analyzed in photoconductive switch' there operation modes.

  17. Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

    SciTech Connect

    Sobolev, M. M.; Nevedomskii, V. N.; Zolotareva, R. V.; Vasil'ev, A. P.; Ustinov, V. M.

    2014-02-21

    Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.

  18. Theoretical Explanation for Success of Deep-Level-Learning Study Tours

    ERIC Educational Resources Information Center

    Bergsteiner, Harald; Avery, Gayle C.

    2008-01-01

    Study tours can help internationalize curricula and prepare students for global workplaces. We examine benefits of tours providing deep-level learning experiences rather than industrial tourism using five main theoretical frameworks to highlight the diverse learning benefits associated with intensive study tours in particular. Relevant theoretical…

  19. Theoretical Explanation for Success of Deep-Level-Learning Study Tours

    ERIC Educational Resources Information Center

    Bergsteiner, Harald; Avery, Gayle C.

    2008-01-01

    Study tours can help internationalize curricula and prepare students for global workplaces. We examine benefits of tours providing deep-level learning experiences rather than industrial tourism using five main theoretical frameworks to highlight the diverse learning benefits associated with intensive study tours in particular. Relevant theoretical…

  20. Deep levels generated by thermal oxidation in p-type 4H-SiC

    SciTech Connect

    Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu

    2013-01-21

    Thermal oxidation is an effective method to reduce deep levels, especially the Z{sub 1/2}-center (E{sub C}-0.67 eV), which strongly suppresses carrier lifetimes in n-type 4H-SiC epilayers. The oxidation, however, simultaneously generates other deep levels, HK0 (E{sub V}+0.79 eV) and HK2 (E{sub V}+0.98 eV) centers, within the lower half of the bandgap of SiC, where the HK0 center is a dominant deep level with a concentration of about 1 Multiplication-Sign 10{sup 13} cm{sup -3} after oxidation. By comparing deep levels observed in three sets of p-type 4H-SiC: oxidized, electron-irradiated, and C{sup +}- or Si{sup +}-implanted samples, we find that the HK0 and HK2 centers are complexes including carbon interstitials such as the di-carbon interstitial or di-carbon antisite. Other defects observed in p-type 4H-SiC after electron irradiation or after C{sup +}/Si{sup +} implantation are also studied.

  1. Spatial and compositional dependence of deep-level defects in InGaN LEDs (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew M.; Crawford, Mary H.; Koleske, Daniel D.; Nelson, Erik C.; Wildeson, Isaac; Deb, Parijat

    2017-02-01

    Efficiency droop and the green gap are challenges to InGaN/GaN light emitting diodes (LEDs). Defects have been suggested to contribute to both effects, so understanding the origin of defects and their impact on LED performance is important to improving efficiency. This talk describes the use of deep level optical spectroscopy (DLOS) to characterize deep level defects in quantum well (QW) and quantum barrier (QB) regions of InGaN LEDs. The spatial dependence of deep level defect density in the MQW region and the evolution of QW deep level defects with indium alloying will be discussed.

  2. Deep levels in undoped horizontal Bridgman GaAs by Fourier transform photoconductivity and Hall effect

    NASA Astrophysics Data System (ADS)

    Mitchel, W. C.; Brown, Gail J.; Rea, Laura S.; Smith, S. R.

    1992-01-01

    Deep levels between 0.1 and 1.0 eV in semi-insulating and high resistivity undoped horizontal Bridgman GaAs have been studied by temperature-dependent Hall effect (TDH) and Fourier transform photoconductivity (FTPC). Activation energies at 0.77, 0.426, and 0.15 eV have been observed by TDH. Photoionization thresholds at 1.0, 0.8, 0.56, 0.44, and 0.25 are reported. The photoconductivity thresholds at 0.56 and 0.25 eV are reported for the first time. New features in the 0.44 eV threshold suggest that the defect responsible for this level has a small lattice relaxation and Frank-Condon shift. Possible associations of the FTPC and TDH energies with the deep-level transient spectroscopy levels EL2, EL3, and EL6 are presented.

  3. Deep level transient spectroscopy (DLTS) on colloidal-synthesized nanocrystal solids.

    PubMed

    Bozyigit, Deniz; Jakob, Michael; Yarema, Olesya; Wood, Vanessa

    2013-04-24

    We demonstrate current-based, deep level transient spectroscopy (DLTS) on semiconductor nanocrystal solids to obtain quantitative information on deep-lying trap states, which play an important role in the electronic transport properties of these novel solids and impact optoelectronic device performance. Here, we apply this purely electrical measurement to an ethanedithiol-treated, PbS nanocrystal solid and find a deep trap with an activation energy of 0.40 eV and a density of NT = 1.7 × 10(17) cm(-3). We use these findings to draw and interpret band structure models to gain insight into charge transport in PbS nanocrystal solids and the operation of PbS nanocrystal-based solar cells.

  4. Deep Level Donor-like Centers in MOCVD-grown n-type GaN

    NASA Astrophysics Data System (ADS)

    Ahoujja, Mo; Yeo, Y. K.; Hengehold, R. L.; Johnstone, D. K.

    2002-03-01

    Defects in semiconductors are of high importance because they adversely affect device performance. For example, defects may act as carrier trap and generation centers which may lead to premature current leakage, and they may also act as non-radiative recombination centers that may reduce the quantum efficiency of electro-optical devices. Therefore understanding the dynamical properties of deep level defects is an important step toward improving device performance. In this work, deep level defects in GaN grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) have been investigated using isothermal capacitance transient spectroscopy (ICTS) and current voltage temperature (IVT) measurements. ICTS analyses show that there are two deep levels of E3 and E4 with emission activation energies of 0.55 and 0.61 eV below the conduction band, respectively, at room temperature. The E4 trap center was found to be the most dominant defect having a larger cross section, smaller capture barrier, and higher concentration. The results from the I-V-T measurements show that this deep center is at about 0.54 eV below the conduction band, and decreases with increasing reverse bias voltage, indicating characteristics of a center with a donor nature. Further analyses of the trap filling dynamics reveal a coupled behavior nature between E3 and E4 traps.

  5. Effect of hydrostatic pressure and alloy composition on sulfur- and selenium-related impurity states in heavily doped n-type GaxIn1-xSb

    NASA Astrophysics Data System (ADS)

    Zitouni, K.; Kadri, A.; Aulombard, R. L.

    1986-08-01

    The properties of sulfur- and selenium-related impurity states have been studied as a function of pressure and composition in heavily doped GaxIn1-xSb. Hall-coefficient and electrical-resistivity measurements were made under hydrostatic pressures of up to 25 kbar, in the alloy composition range 0.30<~x<~0.78 and in the temperature range 77 K<~T<~300 K. In both S-doped and Se-doped samples, the results show the existence of an impurity level forming a localized resonance in the Γ1c band continuum. At x=0.78 and P=0 kbar, the resonance lay ~130+/-10 meV and ~180+/-10 meV above the Γ1c band edge in S-doped and Se-doped samples, respectively. As x decreased, the resonance remained almost fixed with respect to the top of the valence band. As the pressure increased, the impurity level was driven into the fundamental gap, independently of nearby band edges, thus demonstrating ``deep-level behavior.'' Furthermore, the pressure-induced occupation of this impurity level led to time-dependent effects at T<~110 K. The activated thermal electron emission over a potential barrier gave clear evidence for a large lattice relaxation around the impurity centers. These results show the dominant effect of the local non-Coulombic component of the impurity potential, suggesting the complex nature of the impurity centers.

  6. Trace level impurity method development with high-field asymmetric waveform ion mobility spectrometry: systematic study of factors affecting the performance.

    PubMed

    Champarnaud, Elodie; Laures, Alice M-F; Borman, Phil J; Chatfield, Marion J; Kapron, James T; Harrison, Mark; Wolff, Jean-Claude

    2009-01-01

    For the determination of trace level impurities, analytical chemists are confronted with complex mixtures and difficult separations. New technologies such as high-field asymmetric waveform ion mobility spectrometry (FAIMS) have been developed to make their work easier; however, efficient method development and troubleshooting can be quite challenging if little prior knowledge of the factors or their settings is available. We present the results of an investigation performed in order to obtain a better understanding of the FAIMS technology. The influence of eight factors (polarity of dispersion voltage, outer bias voltage, total gas flow rate, composition of the carrier gas (e.g. %He), outer electrode temperature, ratio between the temperatures of the inner and outer electrodes, flow rate and composition of the make-up mobile phase) was assessed. Five types of responses were monitored: value of the compensation voltage (CV), intensity, width and asymmetry of the compensation voltage peak, and resolution between two peaks. Three types of studies were performed using different test mixtures and various ionisation modes to assess whether the same conclusions could be drawn across these conditions for a number of different types of compounds. To extract the maximum information from as few experiments as possible, a Design of Experiment (DoE) approach was used. The results presented in this work provide detailed information on the factors affecting FAIMS separations and therefore should enable the user to troubleshoot more effectively and to develop efficient methods.

  7. Formation of copper(I) from trace levels of copper(II) as an artifactual impurity in the HPLC analysis of olanzapine.

    PubMed

    Baertschi, Steven W; Olsen, Bernard A; Wozniak, Timothy J; Toltl, Nick; O'Shea, Colette; Jansen, Patrick J

    2016-06-05

    An analytical artifact peak appearing to be an impurity was observed intermittently among several laboratories performing HPLC analyses of olanzapine drug substance and formulation samples. The artifact peak was identified as Cu(I) that was formed from the reaction of trace amounts of Cu(II) with olanzapine in the sample solution. Unlike Cu(II), Cu(I) was retained under the ion-pairing HPLC conditions used for analysis. A reaction mechanism was postulated whereby Cu(II) present in the sample solution oxidizes olanzapine to a radical-cation, resulting in formation of Cu(I) and three oxidation products of olanzapine including a previously unknown oxidation product that was identified as hydroxy-olanzapine. Acetonitrile in the sample solution was necessary for the reaction to occur. As little as 100 ppb Cu(II) in the sample solution produced a Cu(I) peak, that by peak area, corresponded to about 0.1% relative to the olanzapine peak. The hydroxy-olanzapine oxidation product was also detectable, but the relative peak area was much smaller. To prevent formation of the Cu(I) artifact peak, EDTA was added to the sample solvent to complex any trace Cu(II) that might be present. The addition of EDTA was shown to prevent Cu(I) formation when Cu(II) was present at levels of 4ppm in the sample solution. Copyright © 2016 Elsevier B.V. All rights reserved.

  8. Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

    SciTech Connect

    Mooney, P. M.; Tarun, Marianne; Beaton, D. A.; Mascarenhas, A.; Alberi, K.

    2016-07-21

    Dilute GaAs1-xBix alloys exhibiting narrow band edge photoluminescence (PL) were recently grown by molecular beam epitaxy (MBE) with the growth surface illuminated by intense UV radiation. To investigate whether the improved optical quality of these films results from a reduction in the concentration of deep level defects, p+/n and n+/p junction diodes were fabricated on both the illuminated and dark areas of several samples. Deep Level Transient Spectroscopy (DLTS) measurements show that the illuminated and dark areas of both the n- and p-type GaAs1-xBix epi-layers have similar concentrations of near mid-gap electron and hole traps, in the 1015 cm-3 range. Thus the improved PL spectra cannot be explained by a reduction in non-radiative recombination at deep level defects. We note that carrier freeze-out above 35 K is significantly reduced in the illuminated areas of the p-type GaAs1-xBix layers compared to the dark areas, allowing the first DLTS measurements of defect energy levels close to the valence band edge. These defect levels may account for differences in the PL spectra from the illuminated and dark areas of un-doped layers with a similar Bi fraction.

  9. Deep-level transient-spectroscopy study of rhodium in indium phosphide

    NASA Astrophysics Data System (ADS)

    Dadgar, A.; Ammerlahn, D.; Näser, A.; Heitz, R.; Kuttler, M.; Bimberg, D.; Baber, N.; Hyeon, J. Y.; Schumann, H.

    1996-03-01

    The electrical properties of rhodium-related defects in low-pressure metal-organic chemical-vapor-deposition-grown InP:Rh are investigated. Rh concentrations up to 1×1019 cm-3 are achieved without formation of macroscopic RhxPy precipitates. With deep-level transient spectroscopy, two Rh-related deep levels, RhA and RhB, are observed in p-InP:Rh having zero- and low-field activation energies of EV+0.71 and EV+0.62 eV, respectively. Optimization of the growth parameters allows for both traps to obtain electrically active concentrations up to 2×1015 cm-3. Detailed capacitance transient investigations were undertaken to study the field dependence of the emission rates and the hole capture cross sections of both levels. The emission rate is found to be strongly field dependent for both levels. For RhA the experimental data are well fitted with a Poole-Frenkel model employing a three-dimensional square well potential of 7.5 nm. The field-enhanced emission of RhB can be explained by a Coulomb potential in combination with a phonon-assisted tunneling process. Evidence is given that RhA is the Rh3+/2+ deep acceptor level in InP caused by isolated substitutional Rh on In sites. Both traps are suited as compensating acceptors for the growth of semi-insulating InP.

  10. Deep-level dominated electrical characteristics of Au contacts on beta-SiC

    NASA Technical Reports Server (NTRS)

    Das, K.; Kong, H. S.; Petit, J. B.; Bumgarner, J. W.; Davis, R. F.; Matus, L. G.

    1990-01-01

    Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.

  11. Reference design and operations for deep borehole disposal of high-level radioactive waste.

    SciTech Connect

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-10-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  12. Investigation of deep level defects in CdTe thin films

    SciTech Connect

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  13. Strong Deep-Level-Emission Photoluminescence in NiO Nanoparticles.

    PubMed

    Gandhi, Ashish Chhaganlal; Wu, Sheng Yun

    2017-08-22

    Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various sizes of nickel oxide (NiO) nanoparticles. The ultraviolet (UV) emission originated from excitonic recombination corresponding near-band-edge (NBE) transition of NiO, while deep-level-emission (DLE) in the visible region due to various structural defects such as oxygen vacancies and interstitial defects. We found that the NiO nanoparticles exhibit a strong green band emission around ~2.37 eV in all samples, covering 80% integrated intensity of PL spectra. This apparently anomalous phenomenon is attributed to photogenerated holes trapped in the deep level oxygen vacancy recombining with the electrons trapped in a shallow level located just below the conducting band.

  14. a Dlts Study of the EL2 Deep Level in Epitaxial Layers of GALLIUM(1-X) Indium(x) Arsenide Deposited by Mocvd

    NASA Astrophysics Data System (ADS)

    Lang, Rick

    1990-01-01

    capacitance transients. Consideration was also given to the possibility that different residual stresses or impurity concentrations in the epilayers were responsible for these results. None of these possibilities were able to explain the difference between the two sets of results. Two likely possibilities for the differences in the dependence of the thermal activation energy on the epilayer indium content were concluded. The first is that different members of a family of EL2 deep levels are being produced by the different deposition conditions. These related levels could be influenced to different extents by changes in the lattice resulting from the increasing indium concentration. The second is that the indium concentration in the epilayers deposited on (100) oriented substrates is not homogeneous but produces microscopic regions of increased concentration. This would explain the slower decrease in the thermal activation energy with increasing average indium content in these epilayers and irregularities reported in their low temperature photoluminescence spectra. The thermal activation energies of the EL2 deep level are presented as a function of the epilayer indium concentrations. The results for epilayers deposited onto substrates oriented 2^circ off (100) are found to be in good agreement with previously reported findings. Investigation of the minority carrier trapping levels in the bulk of these n-type epilayers was attempted using Minority Carrier Transient Spectroscopy (MCTS). The rapid increase in the absorption coefficient of these direct band gap materials resulted in the conditions where interfacial states dominated the spectra obtained. This prevented the acquisition of useful information about minority carrier trapping levels in the epilayers.

  15. Behavior of the Fe impurity in Hg{sup 3}In{sup 2}Te{sup 6} crystals

    SciTech Connect

    Grushka, O. G. Savchuk, A. I.; Chupyra, S. N.; Bilichuk, S. V.

    2015-07-15

    Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at E{sup c}–0.69 eV in Hg{sup 3}In{sup 2}Te{sup 6} crystals. When light is absorbed by Fe{sup 2+} impurity centers, both electronic transitions of the impurity-level–conduction-band type and optical transitions between ground and excited states of the aforementioned centers (intracenter transitions) are observed. Investigations of transport phenomena point to the acceptor properties of Fe{sup 2+} centers.

  16. Investigation of deep level transient spectroscopy (DLTS) of dopant ZnO-based varistors

    NASA Astrophysics Data System (ADS)

    Ammar, A. H.; Farag, A. A. M.

    2010-03-01

    This work shows that the use of conventional analytical procedures to investigate the deep centers from the deep levels transient spectroscopy (DLTS) for ZnO varistors doped with single, double and ternary dopants of Bi 2O 3, CoO and MnO 2. This is to clarify the effect of these doping atoms on the conductivity of ZnO varistors. The results showed that the doping with Bi 2O 3 +CoO leads to a decrease in the conductivity while doping with Bi 2O 3+MnO 2 increased the conductivity and the three dopants together showed a compensating effect. The DLTS characterizing parameters such as minority-carrier capture cross-section, σ, effective density of states in the minority-carrier band, N D, energy separation between the trap level and the minority-carrier band, Δ E t and electron trap density, N t for each doped varistor were also calculated.

  17. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    NASA Astrophysics Data System (ADS)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-12-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  18. Deep-level defects in MBE-grown Ga(As,N) layers

    NASA Astrophysics Data System (ADS)

    Krispin, P.; Spruytte, S. G.; Harris, J. S.; Ploog, K. H.

    2001-12-01

    Deep levels are examined in the whole band gap of strained Ga(As,N) with 3% GaN composition by deep-level transient Fourier spectroscopy on as-grown as well as annealed GaAs/Ga(As,N)/GaAs heterojunctions grown by molecular beam epitaxy. In the lower half of the band gap, there are only hole traps, which are not associated with nitrogen-related defects. For n-type structures, we find in as-grown samples a huge concentration of an electron trap at EC-0.25 eV, which is most likely connected with the nitrogen split interstitial defect (N-N) As. The concentration of this giant trap can be strongly reduced by rapid thermal annealing.

  19. Albedo Neutron Dosimetry in a Deep Geological Disposal Repository for High-Level Nuclear Waste.

    PubMed

    Pang, Bo; Becker, Frank

    2016-06-24

    Albedo neutron dosemeter is the German official personal neutron dosemeter in mixed radiation fields where neutrons contribute to personal dose. In deep geological repositories for high-level nuclear waste, where neutrons can dominate the radiation field, it is of interest to investigate the performance of albedo neutron dosemeter in such facilities. In this study, the deep geological repository is represented by a shielding cask loaded with spent nuclear fuel placed inside a rock salt emplacement drift. Due to the backscattering of neutrons in the drift, issues concerning calibration of the dosemeter arise. Field-specific calibration of the albedo neutron dosemeter was hence performed with Monte Carlo simulations. In order to assess the applicability of the albedo neutron dosemeter in a deep geological repository over a long time scale, spent nuclear fuel with different ages of 50, 100 and 500 years were investigated. It was found out, that the neutron radiation field in a deep geological repository can be assigned to the application area 'N1' of the albedo neutron dosemeter, which is typical in reactors and accelerators with heavy shielding.

  20. Relaxation spectroscopy of deep levels in semiconductors: Laplace-DLTS method

    NASA Astrophysics Data System (ADS)

    Levin, M. N.; Bormontov, A. E.; Akhkubekov, A. É.; Tatokhin, E. A.

    2010-11-01

    Deep level transient spectroscopy (DLTS) is among the main methods used to determine the parameters of electrically active centers of charge localization in semiconductors. In order to increase the accuracy and adequacy of DLTS data, we propose a modified approach based on the application of an inverse Laplace transform. Using the proposed Laplace-DLTS method, it is possible to determine the parameters of centers with close carrier emission coefficients, which cannot be done using the traditional DLTS technique.

  1. Revisiting radiative deep-level transitions in CuGaSe{sub 2} by photoluminescence

    SciTech Connect

    Spindler, Conrad Regesch, David; Siebentritt, Susanne

    2016-07-18

    Recent defect calculations suggest that the open circuit voltage of CuGaSe{sub 2} solar cells can be limited by deep intrinsic electron traps by Ga{sub Cu} antisites and their complexes with Cu-vacancies. To gain experimental evidence, two radiative defect transitions at 1.10 eV and 1.24 eV are characterized by steady-state photoluminescence on epitaxial-grown CuGaSe{sub 2} thin films. Cu-rich samples are studied, since they show highest crystal quality, exciton luminescence, and no potential fluctuations. Variations of the laser intensity and temperature dependent measurements suggest that emission occurs from two deep donor-like levels into the same shallow acceptor. At 10 K, power-law exponents of 1 (low excitation regime) and 1/2 (high excitation regime) are observed identically for both transitions. The theory and a fitting function for the double power law is derived. It is concluded that the acceptor becomes saturated by excess carriers which changes the exponent of all transitions. Activation energies determined from the temperature quenching depend on the excitation level and show unexpected values of 600 meV and higher. The thermal activation of non-radiative processes can explain the distortion of the ionization energies. Both the deep levels play a major role as radiative and non-radiative recombination centers for electrons and can be detrimental for photovoltaic applications.

  2. Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence

    NASA Astrophysics Data System (ADS)

    Spindler, Conrad; Regesch, David; Siebentritt, Susanne

    2016-07-01

    Recent defect calculations suggest that the open circuit voltage of CuGaSe2 solar cells can be limited by deep intrinsic electron traps by GaCu antisites and their complexes with Cu-vacancies. To gain experimental evidence, two radiative defect transitions at 1.10 eV and 1.24 eV are characterized by steady-state photoluminescence on epitaxial-grown CuGaSe2 thin films. Cu-rich samples are studied, since they show highest crystal quality, exciton luminescence, and no potential fluctuations. Variations of the laser intensity and temperature dependent measurements suggest that emission occurs from two deep donor-like levels into the same shallow acceptor. At 10 K, power-law exponents of 1 (low excitation regime) and 1/2 (high excitation regime) are observed identically for both transitions. The theory and a fitting function for the double power law is derived. It is concluded that the acceptor becomes saturated by excess carriers which changes the exponent of all transitions. Activation energies determined from the temperature quenching depend on the excitation level and show unexpected values of 600 meV and higher. The thermal activation of non-radiative processes can explain the distortion of the ionization energies. Both the deep levels play a major role as radiative and non-radiative recombination centers for electrons and can be detrimental for photovoltaic applications.

  3. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  4. Submonolayer epitaxy with impurities

    NASA Astrophysics Data System (ADS)

    Kotrla, Miroslav; Krug, Joachim; Smilauer, Pavel

    2000-03-01

    The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and between adatoms and impurities are incorporated. Impurities can be codeposited with the growing material or predeposited prior to growth. The activated exchange of impurities and adatoms is identified as the key kinetic process in the formation a growth morphology in which the impurities decorate the island edges. The dependence of the island density N on flux F and coverage θ is studied in detail. The impurities strongly increase the island density without appreciably changing the exponent \\chi in the power law relation N ~ F^\\chi, apart from a saturation of the flux dependence at large F and small θ. Within the present model, even completely decorated island edges do not provide efficient barriers to the attachment of adatoms, and therefore the mechanism for the increase of \\chi proposed by D. Kandel [Phys. Rev. Lett. 78, 499 (1997)] is not operative. A simple analytic theory taking into account only the dependence of the adatom diffusion constant on impurity coverage is shown to provide semi-quantitative agreement with many features observed in the simulations.

  5. Deep Impurity States in Gallium Arsenide.

    DTIC Science & Technology

    1981-10-01

    Proc. 13th Int. Conf. Physics of Semiconductors. Rome ed F G Fumi (Rome: Tipografia Marves) pp 1065 8 Peka G P and Karkhanin Yu I 1972 Soy. Phys...Rome: Tipografia Marves) pp 611-4 Turner W J and Petit G D 1964 Bull. Am. Phys. Soc. 9 269 Tyler E. Jarv, M and Penchina C M 1977 Appl. Phys. Lett. 31

  6. Deep Impurity Band Silicon for Subbandgap Photodetection

    DTIC Science & Technology

    2014-05-02

    Our prior research had demonstrated an insulator-to-metal transition in silicon hyperdoped with sulfur or selenium when the chalcogen concentration...silicon hyperdoped with selenium , from [1]. Filled defect band broadens until it intersects conduction band at 0.4% Se caus- ing insulator-to-metal...Aziz, T. Buonassisi, and J.C. Grossman, "Insulator-to-Metal Transition in Selenium -Hyperdoped Silicon: Observation and Origin", Physical Review Letters

  7. Impurities in snowpacks.

    PubMed

    Sommerfeld, R A

    1989-04-01

    Snow can be involved in the acquisition, transport, storage and release of atmospheric impurities. Because it can store impurities for periods of time ranging from hours to millenia, it provides a medium for monitoring atmospheric impurities for a wide range of time scales.In most climates, snow is involved in the precipitation process. It can acquire atmospheric impurities either as aerosols or as gases. The aereosols can be included in the body of the snow crystals or adhered to their surfaces. Gases may be included in bubbles, particularly in the case of rime, or adsorbed on the ice surfaces. The amount of ice surface in a small storm is about 10(10) m(2).Snow on the ground can store the impurities acquired in the precipitation process and can acquire additional impurities as dry deposition. The low temperatures and the fact that ice is a solid reduces biological activity and rates of inorganic reactions. However, the assumption that there is no activity in the winter is not well found. Exchange is possible between different layers of the snow and between the snow and the atmosphere, resulting in relocation of gases and aerosols. These processes also insure that the impurities reside on the exterior surfaces of the ice particles that form the snowpack. Biological activity is possible near the ground-snow interface in most climates.The seasonal snowpack releases its impurities when it melts. Because below freezing processes relocate any internal impurities to the ice surfaces within the snowpack, the impurities are available to the first melt water. Pulses of both acidic and alkalinic impurities have been observed with the initial snow melt water. However, the monitoring of such pulses is difficult and the measurements are inconsistent.Impurities are incorporated for longer periods of time in perennial snowpacks and finally in ice fields. These can be glaciers, or, at the largest scale, continental ice sheets. Coring such ice is expensive but provides data on

  8. Large lattice relaxation deep levels in neutron-irradiated GaN

    NASA Astrophysics Data System (ADS)

    Li, S.; Zhang, J. D.; Beling, C. D.; Wang, K.; Wang, R. X.; Gong, M.; Sarkar, C. K.

    2005-11-01

    Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at EC-ET=0.17 eV. Another line, labeled as N2, at EC-ET=0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out.

  9. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  10. Deep trap levels in CdS solar cells observed by capacitance measurements

    NASA Astrophysics Data System (ADS)

    Hmurcik, L.; Ketelsen, L.; Serway, R. A.

    1982-05-01

    Capacitance measurements have been carried out as a function of reverse bias voltage and signal frequency on thin-film and single-crystal CdS solar cells. It is shown that such measurements can reveal abrupt changes in C-V plots which are attributed to the presence of deep trapping states. The anomalous change in capacitance occurs when the bias voltage raises a trapping state above the Fermi level; the strength of the anomalies depends on several factors including temperature, signal frequency, and junction properties. Measurements taken on the CdS cells indicate that at least two deep trapping states are present in the partially formed i layer of CdS, which is consistent with results reported by other workers.

  11. Investigation of the origin of deep levels in CdTe doped with Bi

    SciTech Connect

    Saucedo, E.; Franc, J.; Elhadidy, H.; Horodysky, P.; Ruiz, C. M.; Bermudez, V.; Sochinskii, N. V.

    2008-05-01

    Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 10{sup 17}-10{sup 19} at./cm{sup 3}. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.

  12. Increased soluble P-selectin levels following deep venous thrombosis: cause or effect?

    PubMed

    Blann, A D; Noteboom, W M; Rosendaal, F R

    2000-01-01

    Deep vein thrombosis (DVT) is associated with coagulation abnormalities, but evidence of excess platelet activity is scant. Soluble P-selectin is a marker of platelet activity, with high levels being found in patients with thrombotic disease. We measured soluble P-selectin by enzyme-linked immunosorbent assay (ELISA) in plasma from 89 patients with objectively confirmed DVT and in 126 healthy age- and sex-matched control subjects, and found higher levels in the patients (P = 0.011). Taking the risk of DVT with a level of soluble P-selectin < 238 ng/ml to be 1, the relative risk of DVT with a soluble P-selectin level >238 ng/ml was 2.1 (95% CI 1. 2-3.6). These high levels may be a reflection of a generalized hypercoagulable state that, with factors such as the presence of persistent thrombin generation, could be responsible for excess platelet activation.

  13. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    NASA Astrophysics Data System (ADS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-06-01

    Lanthanum-doped high quality TlInS2 (TlInS2:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS2:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS2:La. Thermal treatments of TlInS2:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10-14 cm2, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS2:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10-16 cm2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5 deep level defects, are aligned in the

  14. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    SciTech Connect

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  15. Beryllium implantation induced deep levels in 6H-silicon carbide

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Fung, S.; Beling, C. D.; Gong, M.; Henkel, T.; Tanoue, H.; Kobayashi, N.

    2001-12-01

    Beryllium has been implanted into both n- and p-type 6H-silicon carbide (SiC) with high and low doses. Upon subsequent annealing at 1600°C, Beryllium implantation induced deep levels have been investigated by deep level transient spectroscopy. Five deep level centers labeled as BE1-BE5 were detected from high dose beryllium implantation produced pn junctions. A comparative study of low dose beryllium implanted n-type 6H-SiC sample proved that the BE1-BE3 centers were electron traps located at 0.34, 0.44, and 0.53 eV, respectively below the conduction band edge. At the same time, the BE4 and BE5 centers were found to be hole traps situated at 0.64 and 0.73 eV, respectively, above the valence band edge. In the case of beryllium implanted p-type 6H-SiC, four hole traps labeled as BEP1, BEP2, BEP3, and BEP4 have been observed. The observed levels of the hole traps BEP1 and BEP2 at 0.41 and 0.60 eV, respectively, above the valence band agree well with those from the Hall effect data from material with beryllium acting as doubly charged acceptor. The other hole traps BEP3 and BEP4 at 0.76 and 0.88 eV, above the valence band, respectively, are thought to be due to beryllium implantation induced defects or complexes.

  16. Pressure-dependent DLTS (Deep Level Transient Spectroscopy) experiments on Si-doped AlGaAs

    NASA Astrophysics Data System (ADS)

    Farmer, J. W.; Hjalmarson, H. P.; Samara, G. A.

    Pressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

  17. Influences of Nickel and Vanadium Impurities on Microstructure of Aluminum Alloys

    NASA Astrophysics Data System (ADS)

    Zhu, Suming; Yao, Ji-Yong; Sweet, Lisa; Easton, Mark; Taylor, John; Robinson, Paul; Parson, Nick

    2013-05-01

    In recent years, the deterioration in the available coke quality for anode production has led to increased levels of metal impurities such as nickel and vanadium in primary aluminum. There is growing concern from the industry with regard to the impact of increased Ni and V levels on the downstream properties of Al alloy products. This article presents a detailed investigation of the influences of Ni and V impurities on microstructure of three common Al alloys, i.e., AA6063, AA3102, and A356, in both as-cast and heat-treated conditions. The characterization techniques employed include scanning electron microscopy, electron backscattered diffraction, energy-dispersive x-ray spectroscopy, wavelength-dispersive spectroscopy, and transmission electron microscopy. It is shown that the phase constituents of AA6063 are not altered by Ni additions up to 0.05% or V additions up to 0.04%. Whereas there is no change in phase constituents with increasing Ni up to 0.015% for AA3102, the addition of 0.05% Ni seems to have significant influence on the microstructure. For A356, Ni additions up to 0.02% do not seem to have significant influence on the microstructure, but a new phase with significantly high Ni content is formed when the Ni impurity level is increased to 0.05%. The deep insight obtained in this work should be helpful to understand the influences of Ni and V impurities on properties of Al alloys.

  18. Phase Shift of the Asymmetric Friedel-Anderson Impurity

    NASA Astrophysics Data System (ADS)

    Bergmann, Gerd

    2013-04-01

    The ground state of the asymmetric Friedel-Anderson (aFA) impurity is calculated within the FAIR (Friedel artificially inserted resonance) theory. Its properties are investigated by means of the fidelity with different Friedel impurities and by its Friedel oscillations. Friedel impurities with a specific phase shift δ at the Fermi level possess a finite fidelity with the aFA impurity. This phase shift δ determines other properties of the aFA impurity such as the amplitude and displacement of its Friedel oscillations. One can find the parameters of a Friedel impurity which coincides in its Friedel oscillations almost perfectly with the aFA impurity, thereby avoiding an Anderson orthogonality catastrophe.

  19. [Blood plasma level of endothelin in miners of a deep coal mine].

    PubMed

    Plotkin, V Ia; Rebrov, B A; Nikitina, I V

    2000-09-01

    In 60 miners working in a deep coal mine the blood plasma level of endoteline-1 (E-1) was measured by the immunoenzyme technique immediately after working shift. Those in the mining where the working conditions are especially harsh were found to have the highest level of E-1 exceeding the control values. In studying the age-related content of E-1 in blood plasma of coal miners the highest levels of E-1 were recordable in workers 20 to 30 years old, declining and differing in age groups 20-30 and 41-50 years old. The level of E-1 was at its greatest in those workers with minimum length of service in the underground conditions, declining with the service more than 10 years in duration.

  20. Minority-carrier emission effect in deep level transient spectroscopy measurements on Schottky diodes

    SciTech Connect

    Lee, W.I.; Borrego, J.M.

    1988-06-01

    One basic assumption underlying all the deep level transient spectroscopy derivations is the existence of a single dominant emission process during the transient. It is demonstrated in this paper that the use of conventional procedure could result in significant errors in all the calculated defect parameters when the concerned level has comparable emission rates for both carriers in the detected range. A simple verification method and an improved scheme are proposed to determine the accurate defect parameters. By using this scheme, it is confirmed that EL2 in GaAs is an electron trap with a dominant electron emission rate. A level, designated as E3, in Si shows similar electron and hole emission rates in detected range. It is proven for this level that the conventional Arrhenius plot will lead to large errors in all the calculated defect properties, while the improved scheme provides the accurate information.

  1. Deep Ocean Contribution to Sea Level and Energy Budget Not Detectable over the Past Decade

    NASA Astrophysics Data System (ADS)

    Llovel, W.; Willis, J. K.; Landerer, F. W.; Fukumori, I.

    2014-12-01

    As the dominant reservoir of heat uptake in the climate system, the world's oceans provide a critical measure of global climate change. Here, we infer deep ocean warming in the context of global sea level rise and Earth's energy budget between January 2005 and December 2013 based on satellite altimetry, GRACE and Argo floats. Direct measurements of ocean warming above 2000m depth explain 0.9 +/- 0.15 mm/yr of the observed 2.78 +/- 0.32 mm/yr rate of global mean sea level rise. Over the entire water column, independent estimates of ocean warming yield a contribution of 0.77+/-0.28 mm/yr in sea level rise and agree with the upper ocean estimate to within the estimated uncertainties. Accounting for additional possible systematic uncertainties, the deep ocean (below 2000m) contributes -0.13 +/- 0.72 mm/yr to global sea level rise and -0.08 +/- 0.43 W/m2 to Earth's energy balance. The net warming of the ocean implies an energy imbalance for the Earth of 0.64 ± 0.44 W/m2 from 2005 to 2013.

  2. Deep-ocean contribution to sea level and energy budget not detectable over the past decade

    NASA Astrophysics Data System (ADS)

    Llovel, W.; Willis, J. K.; Landerer, F. W.; Fukumori, I.

    2014-11-01

    As the dominant reservoir of heat uptake in the climate system, the world's oceans provide a critical measure of global climate change. Here, we infer deep-ocean warming in the context of global sea-level rise and Earth's energy budget between January 2005 and December 2013. Direct measurements of ocean warming above 2,000 m depth explain about 32% of the observed annual rate of global mean sea-level rise. Over the entire water column, independent estimates of ocean warming yield a contribution of 0.77 +/- 0.28 mm yr-1 in sea-level rise and agree with the upper-ocean estimate to within the estimated uncertainties. Accounting for additional possible systematic uncertainties, the deep ocean (below 2,000 m) contributes -0.13 +/- 0.72 mm yr-1 to global sea-level rise and -0.08 +/- 0.43 W m-2 to Earth's energy balance. The net warming of the ocean implies an energy imbalance for the Earth of 0.64 +/- 0.44 W m-2 from 2005 to 2013.

  3. Studies of electron traps in gallium arsenide and gallium arsenide phosphide by deep level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Day, D. Y. S.

    1980-03-01

    System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deel levels in the GaAs-GaP system. Studies of typical DLTS systems using either the lock-in amplifier or the dual-channel boxcar averager are presented. The effects of non-zero gate width for the boxcar averager, phase angle adjustment for the lock-in amplifier, and response time of a typical commercial capacitance meter are investigated. Errors introduced in the measurements by these effects are calculated for typical cases. Measurements of gold level in silicon are presented, along with calculated corrections. We find the correction to be minimal in the boxcar-averager method, but significant in the lock-in amplifier approach. A DLTS system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge is used employing the diode to be tested along with a dummy diode of similar characteristics. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems . It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77 K and 300 K.

  4. Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

    NASA Astrophysics Data System (ADS)

    Meneghini, M.; de Santi, C.; Trivellin, N.; Orita, K.; Takigawa, S.; Tanaka, T.; Ueda, D.; Meneghesso, G.; Zanoni, E.

    2012-03-01

    Recent studies demonstrated that degradation of InGaN-based laser diodes is due to an increase in non-radiative recombination rate within the active layer of the devices, due to the generation of defects. The aim of this paper is to show - by DLTS - that the degradation of InGaN-based laser diodes is strongly correlated to the increase in the concentration of a deep level located within the active region. The activation energy of the detected deep level is 0.35-0.45 eV. Hypothesis on the nature of this deep level are presented in the paper.

  5. Single photon emission from deep-level defects in monolayer WS e2

    NASA Astrophysics Data System (ADS)

    Ye, Yanxia; Dou, Xiuming; Ding, Kun; Chen, Yu; Jiang, Desheng; Yang, Fuhua; Sun, Baoquan

    2017-06-01

    We report an efficient method to observe single photon emissions in monolayer WS e2 by applying hydrostatic pressure. The photoluminescence peaks of typical two-dimensional excitons show a nearly identical pressure-induced blueshift, whereas the energy of pressure-induced discrete emission lines (quantum emitters) demonstrates a pressure insensitive behavior. The decay time of these discrete line emissions is approximately 10 ns, which is at least one order longer than the lifetime of the broad localized (L ) excitons. These characteristics lead to a conclusion that the excitons bound to deep-level defects can be responsible for the observed single photon emissions.

  6. Deep-level magma dehydration and ascent rates at Mt. Etna (Sicily, Italy)

    NASA Astrophysics Data System (ADS)

    Armienti, P.; Perinelli, C.; Putirka, K.

    2012-04-01

    Magma ascent velocity, v (dH/dt; H = depth, t = time),can be determined from ascent rate (dP/dt), and rate of cooling (dT/dt): v= 1/(rgpg) (dP/dT)(dT/dt) where r is magma density, P is pressure, T is temperature and g is the acceleration of gravity. This equation for v provides a key to investigating the relationships between initial ascent rate of magma and the depths of magma dehydration, and v can be calculated using pressure and temperature (P - PH2O - T) estimates from mineral-liquid thermobarometry, and cooling rates inferred from Crystal Size Distribution (CSD) theory. For recent Mt. Etna lava flows, both dP/dT and dT/dt have been well characterized based, respectively, on clinopyroxene thermobarometry, and clinopyroxene CSDs (the latter yields dT/dt = 2x10-6 °C/s). Deep-level (>20 km) magma ascent rates range from practically 0 (where clinopyroxene P - T estimates form a cluster, and so dP/dT ≈ 0), to about 10 m/hr for flows that yield very steep P - T trajectories. Many lava flows at Mt. Etna yield P - T paths that follow a hydrous (about 3% water) clinopyroxene saturation surface, which closely approximates water contents obtained from melt inclusions. Independent assessments of deep level water content yield ascent rates of ~1 m/hr, in agreement with the slowest rates derived for magma effusion or vapor-driven ascent (~0.001 to >0.2 m/s, or 3.6 to 720 m/hr). Changes in P - T slopes, as obtained by pyroxene thermobarometry, indicate an upward acceleration of magma, which may be due to the onset of deep-level magma dehydration linked to the non-ideal behavior of water and CO2 mixtures that induce a deep-level maximum of water loss at P ≈ 0.4 MPa at T ≈ 1200 ° C for a CO2 content >1000ppm. Melt inclusion data on CO2 and H2O contents are successfully reproduced and interpreted in a context of magma dehydration induced by a CO2 flux possibly deriving by decarbonation reaction of the carbonate fraction of the Capo D'Orlando flysch.

  7. Low rate deep level transient spectroscopy - a powerful tool for defect characterization in wide bandgap semiconductors

    NASA Astrophysics Data System (ADS)

    Schmidt, Florian; von Wenckstern, Holger; Breitenstein, Otwin; Pickenhain, Rainer; Grundmann, Marius

    2014-02-01

    We present an overview of implementation and application of low rate Deep-Level Transient Spectroscopy (LR-DLTS). In conventional DLTS the sensitivity of the capacitance meter must be chosen so low that the whole capacitance drift range between lowest and highest temperature can be measured. In LR-DLTS the bridge is automatically balanced (capacitance and conductivity) after each measured transient. Thus, the highest available sensitivity still avoiding an overload can be used. With LR-DLTS it is now possible to extend the rate windows to the mHz range while preserving highest possible sensitivity. This allows the detection of energetically close levels and levels with large thermal activation energy. Also low emission rates in optical DLTS can be detected this way.

  8. Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

    NASA Technical Reports Server (NTRS)

    Dhar, S.; Das, U.; Bhattacharya, P. K.

    1986-01-01

    Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

  9. Characterization of a novel impurity in bulk drug of lisinopril by multidimensional NMR technique*

    PubMed Central

    Wang, Dan-Hua; Pei, Sai-Feng; Zhou, Ming-Hua; Sun, Cui-Rong; Pan, Yuan-Jiang

    2006-01-01

    During the routine impurity profile of lisinopril bulk drug by HPLC (high-performance liquid chromatography), a potential impurity was detected. Using multidimensional NMR (nuclear magnetic resonance) technique, the trace-level impurity was unambiguously identified to be 2-(-2-oxo-azocan-3-ylamino)-4-phenyl-butyric acid after isolation from lisinopril bulk drug by semi-preparative HPLC. Formation of the impurity was also discussed. To our knowledge, this is a novel impurity and not reported elsewhere. PMID:16532534

  10. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  11. Impurity gettering in semiconductors

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  12. Simplex Algorithm for Deep-Level Transient Spectroscopy: Simplex-DLTS

    NASA Astrophysics Data System (ADS)

    Benchenane-Mehor, Halima; Benzohra, Mohamed; Idrissi-Benzohra, Malika; Olivie, François; Saÿdane, Abdelkader

    2004-11-01

    The Nelder-Mead simplex algorithm improved by Lagarias for low-dimension functions is introduced for the first time on transient capacitance signal analysis to decrease noise sensitivity and increase the resolution of deep-level transient spectroscopy method (DLTS). The application of the resolution figure of merit in predetermining the success of DLTS analyses’ ability to resolve defects has shown that the performances of the simplex-DLTS developed in this work are significantly better than those of matrix pencil-DLTS method (MP-DLTS) published in 1998. Comparing experimentally the two methods in analyzing the signals generated by the same 150 keV germanium preamorphized p+n samples, we found that the simplex-DLTS method detects six defects in which some show very close activation energy values, while the MP-DLTS method found only two defects. Hence, the superiority of the simplex-DLTS method is proved; it reveals deep levels in which the emission process is carried out in the same temperature range.

  13. Automatic recognition of severity level for diagnosis of diabetic retinopathy using deep visual features.

    PubMed

    Abbas, Qaisar; Fondon, Irene; Sarmiento, Auxiliadora; Jiménez, Soledad; Alemany, Pedro

    2017-03-28

    Diabetic retinopathy (DR) is leading cause of blindness among diabetic patients. Recognition of severity level is required by ophthalmologists to early detect and diagnose the DR. However, it is a challenging task for both medical experts and computer-aided diagnosis systems due to requiring extensive domain expert knowledge. In this article, a novel automatic recognition system for the five severity level of diabetic retinopathy (SLDR) is developed without performing any pre- and post-processing steps on retinal fundus images through learning of deep visual features (DVFs). These DVF features are extracted from each image by using color dense in scale-invariant and gradient location-orientation histogram techniques. To learn these DVF features, a semi-supervised multilayer deep-learning algorithm is utilized along with a new compressed layer and fine-tuning steps. This SLDR system was evaluated and compared with state-of-the-art techniques using the measures of sensitivity (SE), specificity (SP) and area under the receiving operating curves (AUC). On 750 fundus images (150 per category), the SE of 92.18%, SP of 94.50% and AUC of 0.924 values were obtained on average. These results demonstrate that the SLDR system is appropriate for early detection of DR and provide an effective treatment for prediction type of diabetes.

  14. Sea-level and deep-sea-temperature variability over the past 5.3 million years.

    PubMed

    Rohling, E J; Foster, G L; Grant, K M; Marino, G; Roberts, A P; Tamisiea, M E; Williams, F

    2014-04-24

    Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (δ(18)O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. Here we present a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. We find that deep-sea temperature and sea level generally decreased through time, but distinctly out of synchrony, which is remarkable given the importance of ice-albedo feedbacks on the radiative forcing of climate. In particular, we observe a large temporal offset during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. Last, we tentatively infer that ice sheets may have grown largest during glacials with more modest reductions in deep-sea temperature.

  15. Passivation of impurities in semiconductors by hydrogen and light metal ions

    NASA Astrophysics Data System (ADS)

    Gislason, Hafliði P.

    1997-01-01

    Books as well as numerous articles have been written about hydrogen passivation in classical semiconductors such as Si and GaAs. The subject has gained a renewed interest recently since hydrogen is widely considered to saturate the hole conductivity of the wide bandgap semiconductors GaN and ZnSe which are currently most promising for blue light emitting devices. Other group-I impurities are capable of compensating the electrical conductivity of semiconductors both through directly neutralising (passivating) the impurity or providing space charge of polarity opposite to that of the dominating one. The paper reviews the similarities and differences between hydrogen and its light metallic neighbour in the periodic table, lithium. Also we provide a comparison with the heavier interstitial copper which is known for its ability to passivate shallow acceptors. Finally fundamental differences between shallow-level and deep level passivation will be addressed.

  16. Electron Traps Detected in p-type GaAsN Using Deep Level Transient Spectroscopy

    SciTech Connect

    Johnston, S.; Kurtz, S.; Friedman, D.; Ptak, A.; Ahrenkiel, R.; Crandall, R.

    2005-01-01

    The GaAsN alloy can have a band gap as small as 1.0 eV when the nitrogen composition is about 2%. Indium can also be added to the alloy to increase lattice matching to GaAs and Ge. These properties are advantageous for developing a highly-efficient, multi-junction solar cell. However, poor GaAsN cell properties, such as low open-circuit voltage, have led to inadequate performance. Deep-level transient spectroscopy of p-type GaAsN has identified an electron trap having an activation energy near 0.2 eV and a trap density of at least 1016 cm-3. This trap level appears with the addition of small amounts of nitrogen to GaAs, which also corresponds to an increased drop in open-circuit voltage.

  17. Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Fung, S.; Ling, C. C.; Beling, C. D.; Gong, M.

    2003-09-01

    Deep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6H-SiC after neutron irradiation. Deep levels situated at EC-0.23, EC-0.36/0.44, EC-0.50, and EC-0.62/0.68 eV have been detected in the temperature range of 100-450 K, which have been identified with the previously reported deep levels ED1, E1/E2, Ei, and Z1/Z2, respectively. Thermal annealing studies of these deep levels reveal that ED1 and Ei anneal at a temperature below 350 °C, the Z1/Z2 levels anneal out at 900 °C, while the intensity of the E1/E2 peaks is increased with annealing temperature, reaching a maximum at about 500-750 °C, and finally annealing out at 1400 °C. The possible nature of the deep levels ED1, E1/E2, Ei, and Z1/Z2 are discussed in the context of their annealing behavior. Upon further annealing at 1600 °C, four deep levels labeled NE1 at EC-0.44 eV, NE2 EC-0.53 eV, NE3EC-0.64 eV, and NE4EC-0.68 eV are produced. Evidence is given that these levels are different in their origin to E1/E2 and Z1/Z2.

  18. Deep level transient spectroscopy study of particle irradiation induced defects in n-6H-SiC

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Gong, M.; Fung, S.; Beling, C. D.; Ling, C. C.

    2004-03-01

    Neutron and electron irradiation induced deep level defects in n-type 6H-SiC have been investigated using deep level transient spectroscopy (DLTS) combined with annealing experiments. Deep levels ED1, E1/E2, Ei, and Z1/Z2 were observed in n-type 6H-SiC material irradiated with neutron. Thermal annealing studies of these deep levels revealed that ED1 and Ei annealed at a temperature below 350^oC, Z1/Z2 levels annealed out at 900^oC, while the intensity of the E1/E2 peaks increased with annealing temperature, reached a maximum at about 500-750^oC, and finally annealed out at 1400^oC. Upon further annealing at 1600^oC, four deep levels labeled NE1 at EC-0.44eV, NE2 EC-0.53eV, NE3 EC-0.64eV, and NE4 EC-0.68eV are produced. Ionization energies of these levels are similar to E1/E2 and Z1/Z2 respectively, but their capture cross sections are different. Samples were irradiated with electrons with different energies ranging from 0.2MeV to 1.7MeV. No deep level was detected in samples irradiated with 0.2MeV electron and deep levels ED1, E1/E2, and Ei were induced with electron energy larger than 0.3MeV.

  19. High-Temperature Oxidation of Alloy 617 in Helium Containing Part-Per-Million Levels of CO and CO2 as Impurities

    NASA Astrophysics Data System (ADS)

    Kumar, Deepak; Adharapurapu, Raghavendra R.; Pollock, Tresa M.; Was, Gary S.

    2011-05-01

    The objective of this study was to determine the mechanisms of carburization and decarburization of alloy 617 in impure helium. To avoid the coupling of multiple gas/metal reactions that occurs in impure helium, oxidation studies were conducted in binary He + CO + CO2 gas mixtures with CO/CO2 ratios of 9 and 1272 in the temperature range 1123 K to 1273 K (850 °C to 1000 °C). The mechanisms were corroborated through measurements of oxidation kinetics, gas-phase analysis, and surface/bulk microstructure examination. A critical temperature corresponding to the equilibrium of the reaction 27Cr + 6CO ↔ 2Cr2O3 + Cr23C6 was identified to lie between 1173 K and 1223 K (900 °C and 950 °C) at CO/CO2 ratio 9, above which decarburization of the alloy occurred via a kinetic competition between two simultaneous surface reactions: chromia formation and chromia reduction. The reduction rate exceeded the formation rate, preventing the growth of a stable chromia film until carbon in the sample was depleted. Surface and bulk carburization of the samples occurred for a CO/CO2 ratio of 1272 at all temperatures. The surface carbide, Cr7C3, was metastable and nucleated due to preferential adsorption of carbon on the chromia surface. The Cr7C3 precipitates grew at the gas/scale interface via outward diffusion of Cr cations through the chromia scale until the activity of Cr at the reaction site fell below a critical value. The decrease in activity of chromium triggered a reaction between chromia and carbide: Cr2O3 + Cr7C3 → 9Cr+3CO, which resulted in a porous surface scale. The results show that the industrial application of the alloy 617 at T > 1173 K (900 °C) in impure helium will be limited by oxidation.

  20. Analysis of the effects of impurities in silicon

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J.; Giuliano, M. N.

    1980-01-01

    A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. It was found that certain impurities such as titanium, tantalum, and vanadium were bad, even in very small concentrations. Cell performance appeared relatively tolerable to impurities such as copper, carbon, calcium, chromium, iron and nickel (in the concentration levels which were considered).

  1. Effects of Pressure on Optically Active Deep Levels in Phosphorus Doped ZnSe

    NASA Astrophysics Data System (ADS)

    Weinstein, B. A.; Iota, V.

    1998-03-01

    We report high pressure photoluminescence (PL) and PL-excitation (PLE) studies at 8K of the 'midgap' emission in P-doped ZnSe using a diamond-cell with He medium. The dominant emission at low pressure is due to donor-acceptor-pair (DAP) transitions between shallow donors and deep trigonally relaxed P_Se acceptors.(J. Davies, et al., J. Luminescence 18/19, 322 (1979)) Its PL and PLE peaks shift by 8.2meV/kbar and 5.9meV/kbar, respectively -- Stokes shift decreasing with pressure. At 35kbar a new PL band, shifting to lower energy (-5.4meV/kbar), emerges from above the absorption edge, and concurrently the original DAP PL quenches. This shows that a resonant level, a deep donor or possibly a P_Se antibonding state,(R. Watts, et al., Phys. Rev. B3), 404 (1971) crosses the conduction edge into the gap. A third PL band is seen only with internse UV excitation. It occurs initially as a high energy shoulder of the original DAP peak, but shifts more rapidly upward (9.4meV/kbar) until it crosses the edge and quenches at 40kbar. We discuss candidates for this band, including donor-P_Se complexes, and we compare our results to similar work on the Zn vacancy in ZnSe. (figures)

  2. Dynamical impurity problems

    SciTech Connect

    Emery, V.J.; Kivelson, S.A.

    1993-12-31

    In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class.

  3. SLIDE: automatic spine level identification system using a deep convolutional neural network.

    PubMed

    Hetherington, Jorden; Lessoway, Victoria; Gunka, Vit; Abolmaesumi, Purang; Rohling, Robert

    2017-07-01

    Percutaneous spinal needle insertion procedures often require proper identification of the vertebral level to effectively and safely deliver analgesic agents. The current clinical method involves "blind" identification of the vertebral level through manual palpation of the spine, which has only 30% reported accuracy. Therefore, there is a need for better anatomical identification prior to needle insertion. A real-time system was developed to identify the vertebral level from a sequence of ultrasound images, following a clinical imaging protocol. The system uses a deep convolutional neural network (CNN) to classify transverse images of the lower spine. Several existing CNN architectures were implemented, utilizing transfer learning, and compared for adequacy in a real-time system. In the system, the CNN output is processed, using a novel state machine, to automatically identify vertebral levels as the transducer moves up the spine. Additionally, a graphical display was developed and integrated within 3D Slicer. Finally, an augmented reality display, projecting the level onto the patient's back, was also designed. A small feasibility study [Formula: see text] evaluated performance. The proposed CNN successfully discriminates ultrasound images of the sacrum, intervertebral gaps, and vertebral bones, achieving 88% 20-fold cross-validation accuracy. Seventeen of 20 test ultrasound scans had successful identification of all vertebral levels, processed at real-time speed (40 frames/s). A machine learning system is presented that successfully identifies lumbar vertebral levels. The small study on human subjects demonstrated real-time performance. A projection-based augmented reality display was used to show the vertebral level directly on the subject adjacent to the puncture site.

  4. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect

    Koblmueller, G.; Chu, R. M.; Raman, A.; Mishra, U. K.; Speck, J. S.

    2010-02-15

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  5. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    NASA Astrophysics Data System (ADS)

    Koblmüller, G.; Chu, R. M.; Raman, A.; Mishra, U. K.; Speck, J. S.

    2010-02-01

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr4 to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm2/V s and the dc drain current reached ˜1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  6. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    SciTech Connect

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2013-12-02

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150 °C) GaN. Reducing T{sub g}, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

  7. Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu

    2013-05-01

    The Z1/2 center (EC - 0.67 eV), which is a lifetime killer in n-type 4H-SiC epilayers, is reduced by thermal oxidation. The oxidation, however, simultaneously generates other deep levels: ON1 (EC - 0.84 eV) and ON2 (EC - 1.1 eV) centers. From the behaviors (generation condition, thermal stability, and change in the depth profiles) of the ON1 and ON2 centers in samples (i) oxidized in O2, (ii) implanted with C+ or Si+ atoms, and (iii) oxidized in N2O (or NO), we suggest that these defects may originate from the same defect in different charge states, related to both carbon interstitials and N atoms.

  8. Thermally stimulated current studies on deep levels in hydrothermally grown single crystal ZnO bulk

    NASA Astrophysics Data System (ADS)

    Kuriyama, K.; Ooi, M.; Matsumoto, K.; Kushida, K.

    2006-12-01

    The evaluation of the deep levels in hydrothermally grown ZnO single crystal bulk is studied using a thermally stimulated current (TSC) method with excitation above (below) the band gap. Two broad TSC spectra are resolved by four traps, P1 (165meV), P2 (255meV), P3 (300meV), and P4 (375meV). P2, P3, and P4 traps are responsible for excitation by the blue and green lights, but P1 trap is weakly responsible. Possible origins of P1 and P2 are attributed to native point defects and Li acceptor, respectively. P3 is correlated to oxygen vacancy as an origin of the green luminescence.

  9. Using Deep Level Transient Spectroscopy (DLTS) to characterize defects in semiconductor devices

    NASA Astrophysics Data System (ADS)

    Lang, David

    2012-02-01

    Deep Level Transient Spectroscopy (DLTS) is a member of the class of instrumentation methods that utilizes the detection of trapped electronic charge to characterize defects in solids. Such methods detect this charge either directly, e.g. via capacitance measurements, or indirectly, e.g. via the current associated with the release of trapped charge. These types of instrumentation have been widely used since the dawn of solid-state physics, particularly for nonradiative defects in semiconductors and insulators. In the case of semiconductor devices, the highly sensitive capacitive detection of trapped charge in the junction depletion layer makes these methods particularly powerful. The DLTS method introduced the concept of time-domain filtering (the so-called ``rate window'') to create a defect spectrum from the transient response of the device versus temperature. This talk will give an overview of DLTS, with particular emphasis on the correlation between defects and device performance.

  10. Deep levels induced by high fluence proton irradiation in undoped GaAs diodes

    SciTech Connect

    Castaldini, A.; Cavallini, A.; Polenta, L.; Canali, C.; Nava, F.; Ferrini, R.; Galli, M.

    1998-12-31

    Semi-insulating liquid encapsulated Czochralski grown GaAs has been investigated after irradiation at high fluences of high-energy protons. Electron beam induced current observations of scanning electron microscopy evidenced a radiation stimulated ordering. An analysis has been carried out of the deep levels associated with defects as a function of the irradiation fluence, using complementary current transient spectroscopies. By increasing the irradiation fluence, the concentration of the native traps at 0.37 eV together with that of the EL2 defect significantly increases and, at the same time, two new electron traps at 0.15 eV and 0.18 eV arise and quickly increase in density.

  11. Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Ling, C. C.; Gong, M.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2005-01-01

    Deep level defects E1/E2 were observed in He-implanted, 0.3 and 1.7MeV electron-irradiated n-type 6H-SiC. Similar to others' results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E1/E2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E1/E2. The activation energy and the capture cross section of this defect are EC-0.31eV and σ ˜8×10-14cm2, respectively.

  12. Promoting and Studying Deep-Level Discourse During Large-Lecture Introductory Physics

    NASA Astrophysics Data System (ADS)

    Li, Sissi; Demaree, Dedra

    2010-10-01

    At Oregon State University, the introductory calculus-based physics sequence utilizes social engagement as a learning tool. The reformed curriculum is modeled after the Interactive Science Learning Environment from Rutgers University, and makes use of Peer Instruction as a pedagogical tool to facilitate interactions. Over the past two years we have utilized a number of techniques to understand how to facilitate activities that promote productive discussion within the large lecture classroom. We specifically seek student discussion that goes beyond agreement on conceptual questions, encouraging deeper discussions such as what assumptions are appropriate, or how different assumptions would change the chosen answer to a given question. We have quantitative analysis of engagement based on video data, qualitative analysis of dialogue from audio data, and classroom observations by an external researcher. In this paper we share a subset of what we have learned about how to engage students in deep-level discussions during lecture.

  13. On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon

    SciTech Connect

    Mchedlidze, T.; Nacke, M.; Hieckmann, E.; Weber, J.

    2014-01-07

    The suitability of the deep level transient spectroscopy (DLTS) technique in exploring locations with high and degraded carrier lifetimes containing grain-boundaries (GBs) in multicrystalline silicon (mc-Si) wafers was studied. The types and locations of GBs were determined in mc-Si samples by electron backscatter diffraction. Mesa-type Schottky diodes were prepared at (along) GBs and at reference, GB-free locations. Detected DLTS signals varied strongly along the same GB. Experiments with dislocation networks, model structures for GBs, showed that GB-related traps may be explored only using special arrangement of a GB and the diode contacts. Iron-related carrier traps were detected in locations with degraded carrier lifetimes. Densities of the traps for near-GB and for GB free locations were compared to the lifetime measurement results.

  14. Inexpensive circuit for the measurement of capture cross section of deep level defects in semiconductors

    NASA Astrophysics Data System (ADS)

    Reddy, C. V.; Fung, S.; Beling, C. D.

    1996-12-01

    A simple and inexpensive circuit to facilitate the direct measurement of capture cross section, when synchronized with a deep level transient spectroscopy system, is described. It avoids the most commonly encountered problem of loading and distortion of the bias (trap filling) pulses of nanosecond duration in the capture cross-section measurement. The capacitance meter, whose internal circuitry is responsible for the distortion, is connected and disconnected from the rest of the apparatus with the help of simple and low-cost reed relay switches featuring high operating speed and low contact resistance. Sharp bias pulses as small as 30 ns can successfully be applied to the sample with no observable distortion. Finally, a representative measurement is shown to demonstrate the simplicity and high performance of the circuit.

  15. Intrinsic deep hole trap levels in Cu2O with self-consistent repulsive Coulomb energy

    NASA Astrophysics Data System (ADS)

    Huang, Bolong

    2016-03-01

    The large error of the DFT+U method on full-filled shell metal oxides is due to the residue of self-energy from the localized d orbitals of cations and p orbitals of the anions. U parameters are selfconsistently found to achieve the analytical self-energy cancellation. The improved band structures based on relaxed lattices of Cu2O are shown based on minimization of self-energy error. The experimentally reported intrinsic p-type trap levels are contributed by both Cu-vacancy and the O-interstitial defects in Cu2O. The latter defect has the lowest formation energy but contributes a deep hole trap level while the Cuvacancy has higher energy cost but acting as a shallow acceptor. Both present single-particle levels spread over nearby the valence band edge, consistent to the trend of defects transition levels. By this calculation approach, we also elucidated the entanglement of strong p-d orbital coupling to unravel the screened Coulomb potential of fully filled shells.

  16. Effect of Z{sub 1/2}, EH{sub 5}, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

    SciTech Connect

    Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mandal, Krishna C.

    2014-06-14

    Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z{sub 1/2}, EH{sub 5}, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z{sub 1/2} defects was found to be 1.7 × 10{sup 13} cm{sup −3}. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm{sup 2} large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.

  17. Identification, isolation and characterization of process related impurities in ezetimibe.

    PubMed

    Guntupalli, Srikanth; Ray, Uttam Kumar; Murali, N; Gupta, P Badrinadh; Kumar, Vundavilli Jagadeesh; Satheesh, D; Islam, Aminul

    2014-01-01

    During the synthesis of ezetimibe, two process related impurities were detected were HPLC analysis at levels ranging from 0.05 to 0.8%. These two impurities were isolated by column chromatography and co-injected with ezetimibe sample to confirm the retention times in HPLC. These two impurities were characterized as 2-(4-hydroxybenzyl)-N,5-bis(4-fluorophenyl) pentanamide (impurity-I) and 1-(4-fluorophenyl)-3(3-(4-fluorophenyl)propyl)-4-(4-hydroxyphenyl)azetidin-2-one (impurity-II). Isolation, structural elucidation of these impurities by spectral data ((1)H NMR, (13)C NMR, MS and IR) and probable mechanism of their formation have been discussed.

  18. Ground- and excited-state impurity bands in quantum wells

    NASA Astrophysics Data System (ADS)

    Ghazali, A.; Gold, A.; Serre, J.

    1989-02-01

    The density of states and the spectral density of electrons in quantum wells with charged impurities are calculated with use of a multiple-scattering method. The impurity-density-dependent broadening and the gradual merging of the ground (1s) and excited (2p+/-,2s) impurity levels into impurity bands are investigated. At low density the shapes of the 1s, 2p+/-, and 2s spectral densities are found to be in excellent agreement with the analytical results obtained for the ideal two-dimensional Coulomb problem.

  19. Gas chromatographic analysis of trace gas impurities in tungsten hexafluoride.

    PubMed

    Laurens, J B; de Coning, J P; Swinley, J M

    2001-03-09

    Highly reactive fluorinated gaseous matrices require special equipment and techniques for the gas chromatographic analysis of trace impurities in these gases. The impurities that were analysed at the low-microg/l levels included oxygen, nitrogen, carbon dioxide, carbon monoxide, sulfur hexafluoride and hydrogen. This paper describes the use of a system utilising backflush column switching to protect the columns and detectors in the analysis of trace gas impurities in tungsten hexafluoride. Two separate channels were used for the analysis of H2, O2, N2, CO, CO2 and SF6 impurities with pulsed discharge helium ionisation detection.

  20. Impurity effects in silicon for high efficiency solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Rohatgi, A.

    1986-01-01

    Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

  1. Effects of impurities on silicon solar-cell performance

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.

    1986-01-01

    Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

  2. Development of an LC-MS method for ultra trace-level determination of 2,2,6,6-tetramethylpiperidine-1-oxl (TEMPO), a potential genotoxic impurity within active pharmaceutical ingredients.

    PubMed

    Pennington, Justin; Cohen, Ryan D; Tian, Ye; Boulineau, Fabien

    2015-10-10

    TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl) is a stable free radical which has been widely used for various research and industrial applications, including the manufacture of many active pharmaceutical ingredients. TEMPO has been identified as a potential genotoxic impurity resulting in the need for analytical methodology to accurately determine its level at several orders of magnitude less than typical impurity quantitation limits. TEMPO can undergo disproportionation to form both oxidized and reduced TEMPO, making individual determination unreliable. To overcome this challenge, all TEMPO related species were converted to the reduced form through reduction with sodium ascorbate. Given the ultra-trace (0.5 ppm) level requirements and the lack of UV response in the reduced form, a single quadrupole mass spectrometer (MS) was utilized. In order to implement a highly sensitive MS method in a GMP environment, several approaches were employed to optimize accuracy and robustness including: internal standard correction for drift elimination, six-level standard addition to reduce matrix effects, and weighted linear regression to cover a broad analytical range. The method was fully validated according to ICH guidelines. The method is specific, linear, accurate, precise, and robust within a range of 0.5-100 ppm.

  3. Pixel-Level Deep Segmentation: Artificial Intelligence Quantifies Muscle on Computed Tomography for Body Morphometric Analysis.

    PubMed

    Lee, Hyunkwang; Troschel, Fabian M; Tajmir, Shahein; Fuchs, Georg; Mario, Julia; Fintelmann, Florian J; Do, Synho

    2017-08-01

    Pretreatment risk stratification is key for personalized medicine. While many physicians rely on an "eyeball test" to assess whether patients will tolerate major surgery or chemotherapy, "eyeballing" is inherently subjective and difficult to quantify. The concept of morphometric age derived from cross-sectional imaging has been found to correlate well with outcomes such as length of stay, morbidity, and mortality. However, the determination of the morphometric age is time intensive and requires highly trained experts. In this study, we propose a fully automated deep learning system for the segmentation of skeletal muscle cross-sectional area (CSA) on an axial computed tomography image taken at the third lumbar vertebra. We utilized a fully automated deep segmentation model derived from an extended implementation of a fully convolutional network with weight initialization of an ImageNet pre-trained model, followed by post processing to eliminate intramuscular fat for a more accurate analysis. This experiment was conducted by varying window level (WL), window width (WW), and bit resolutions in order to better understand the effects of the parameters on the model performance. Our best model, fine-tuned on 250 training images and ground truth labels, achieves 0.93 ± 0.02 Dice similarity coefficient (DSC) and 3.68 ± 2.29% difference between predicted and ground truth muscle CSA on 150 held-out test cases. Ultimately, the fully automated segmentation system can be embedded into the clinical environment to accelerate the quantification of muscle and expanded to volume analysis of 3D datasets.

  4. Dermatologist-level classification of skin cancer with deep neural networks.

    PubMed

    Esteva, Andre; Kuprel, Brett; Novoa, Roberto A; Ko, Justin; Swetter, Susan M; Blau, Helen M; Thrun, Sebastian

    2017-02-02

    Skin cancer, the most common human malignancy, is primarily diagnosed visually, beginning with an initial clinical screening and followed potentially by dermoscopic analysis, a biopsy and histopathological examination. Automated classification of skin lesions using images is a challenging task owing to the fine-grained variability in the appearance of skin lesions. Deep convolutional neural networks (CNNs) show potential for general and highly variable tasks across many fine-grained object categories. Here we demonstrate classification of skin lesions using a single CNN, trained end-to-end from images directly, using only pixels and disease labels as inputs. We train a CNN using a dataset of 129,450 clinical images-two orders of magnitude larger than previous datasets-consisting of 2,032 different diseases. We test its performance against 21 board-certified dermatologists on biopsy-proven clinical images with two critical binary classification use cases: keratinocyte carcinomas versus benign seborrheic keratoses; and malignant melanomas versus benign nevi. The first case represents the identification of the most common cancers, the second represents the identification of the deadliest skin cancer. The CNN achieves performance on par with all tested experts across both tasks, demonstrating an artificial intelligence capable of classifying skin cancer with a level of competence comparable to dermatologists. Outfitted with deep neural networks, mobile devices can potentially extend the reach of dermatologists outside of the clinic. It is projected that 6.3 billion smartphone subscriptions will exist by the year 2021 (ref. 13) and can therefore potentially provide low-cost universal access to vital diagnostic care.

  5. Chloroplast phylogenomic analyses resolve deep-level relationships of an intractable bamboo tribe Arundinarieae (poaceae).

    PubMed

    Ma, Peng-Fei; Zhang, Yu-Xiao; Zeng, Chun-Xia; Guo, Zhen-Hua; Li, De-Zhu

    2014-11-01

    The temperate woody bamboos constitute a distinct tribe Arundinarieae (Poaceae: Bambusoideae) with high species diversity. Estimating phylogenetic relationships among the 11 major lineages of Arundinarieae has been particularly difficult, owing to a possible rapid radiation and the extremely low rate of sequence divergence. Here, we explore the use of chloroplast genome sequencing for phylogenetic inference. We sampled 25 species (22 temperate bamboos and 3 outgroups) for the complete genome representing eight major lineages of Arundinarieae in an attempt to resolve backbone relationships. Phylogenetic analyses of coding versus noncoding sequences, and of different regions of the genome (large single copy and small single copy, and inverted repeat regions) yielded no well-supported contradicting topologies but potential incongruence was found between the coding and noncoding sequences. The use of various data partitioning schemes in analysis of the complete sequences resulted in nearly identical topologies and node support values, although the partitioning schemes were decisively different from each other as to the fit to the data. Our full genomic data set substantially increased resolution along the backbone and provided strong support for most relationships despite the very short internodes and long branches in the tree. The inferred relationships were also robust to potential confounding factors (e.g., long-branch attraction) and received support from independent indels in the genome. We then added taxa from the three Arundinarieae lineages that were not included in the full-genome data set; each of these were sampled for more than 50% genome sequences. The resulting trees not only corroborated the reconstructed deep-level relationships but also largely resolved the phylogenetic placements of these three additional lineages. Furthermore, adding 129 additional taxa sampled for only eight chloroplast loci to the combined data set yielded almost identical

  6. Deep-level traps induced dark currents in extended wavelength InxGa1-xAs/InP photodetector

    NASA Astrophysics Data System (ADS)

    Ji, Xiaoli; Liu, Baiqing; Xu, Yue; Tang, Hengjing; Li, Xue; Gong, HaiMei; Shen, Bo; Yang, Xuelin; Han, Ping; Yan, Feng

    2013-12-01

    The dark current mechanism of extended wavelength InxGa1-xAs photo-detectors is still a debated issue. In this paper, the deep-level transient spectroscopy (DLTS) and dark current characteristics of InxGa1-xAs/InP detectors are investigated. Using trap parameters obtained from DLTS measurement, the device simulations of current-voltage characteristics are carried out by Silvaco Altas. The results reveal that the dark current at the low reverse bias voltage is associated with deep level trap induced trap assisted tunneling and Shockley-Read-Hall generation mechanism. The reduction of the deep level trap concentration in InxGa1-xAs absorption layer could dramatically suppress the dark current near zero bias in extended wavelength InxGa1-xAs/InP detectors.

  7. Deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase-epitaxy n-GaAs

    NASA Technical Reports Server (NTRS)

    Partin, D. L.; Chen, J. W.; Milnes, A. G.; Vassamillet, L. F.

    1979-01-01

    The paper presents deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase epitaxy n-GaAs. Nickel diffused into VPE n-GaAs reduces the hole diffusion length L sub p from 4.3 to 1.1 microns. Deep-level transient spectroscopy was used to identify energy levels in Ni-diffused GaAs; the as-grown VPE GaAs contains traces of these levels and an electron trap. Ni diffusion reduces the concentration of this level by an amount that matches the increase in concentration of each of the two Ni-related levels. A technique for measuring minority-carrier capture cross sections was developed, which indicates that L sub p in Ni-diffused VPE n-GaAs is controlled by the E sub c - 0.39 eV defect level.

  8. Deep level transient capacitance measurements of GaSb self-assembled quantum dots

    NASA Astrophysics Data System (ADS)

    Magno, R.; Bennett, Brian R.; Glaser, E. R.

    2000-11-01

    Deep level transient spectroscopy (DLTS) measurements have been made on GaAs n+p diodes containing GaSb self-assembled quantum dots and control junctions without dots. The self-assembled dots were formed by molecular beam epitaxy using the Stranski-Krastanov growth mode. The dots are located in the depletion region on the p side of the junction where they act as a potential well that may capture and emit holes. Spectra recorded for temperatures between 77 and 440 K reveal several peaks in diodes containing dots. A control sample with a GaSb wetting layer was found to contain a single broad high temperature peak that is similar to a line found in the GaSb quantum dot samples. No lines were found in the spectra of a control sample prepared without GaSb. DLTS profiling procedures indicate that one of the peaks is due to a quantum-confined energy level associated with the GaSb dots while the others are due to defects in the GaAs around the dots. The peak identified as a quantum-confined energy level shifts to higher temperatures and its intensity decreases on increasing the reverse bias. The activation energy for the quantum-confined level increases from 400 meV when measured at a low reverse bias to 550 meV for a large reverse bias. Lines with activation energies of 400, 640, and 840 meV are associated with defects in the GaAs based on the bias dependence of their peak positions and amplitudes.

  9. Deep Levels in p-Type InGaAsN Lattice Matched to GaAs

    SciTech Connect

    Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

    1999-03-02

    Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

  10. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    SciTech Connect

    Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

    2016-03-14

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  11. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    NASA Astrophysics Data System (ADS)

    Pousset, J.; Farella, I.; Gambino, S.; Cola, A.

    2016-03-01

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  12. Challenges to Standardization: A Case Study Using Coastal and Deep-Ocean Water Level Data

    NASA Astrophysics Data System (ADS)

    Sweeney, A. D.; Stroker, K. J.; Mungov, G.; McLean, S. J.

    2015-12-01

    Sea levels recorded at coastal stations and inferred from deep-ocean pressure observations at the seafloor are submitted for archive in multiple data and metadata formats. These formats include two forms of schema-less XML and a custom binary format accompanied by metadata in a spreadsheet. The authors report on efforts to use existing standards to make this data more discoverable and more useful beyond their initial use in detecting tsunamis. An initial review of data formats for sea level data around the globe revealed heterogeneity in presentation and content. In the absence of a widely-used domain-specific format, we adopted the general model for structuring data and metadata expressed by the Network Common Data Form (netCDF). netCDF has been endorsed by the Open Geospatial Consortium and has the advantages of small size when compared to equivalent plain text representation and provides a standard way of embedding metadata in the same file. We followed the orthogonal time-series profile of the Climate and Forecast discrete sampling geometries as the convention for structuring the data and describing metadata relevant for use. We adhered to the Attribute Convention for Data Discovery for capturing metadata to support user search. Beyond making it possible to structure data and metadata in a standard way, netCDF is supported by multiple software tools in providing programmatic cataloging, access, subsetting, and transformation to other formats. We will describe our successes and failures in adhering to existing standards and provide requirements for either augmenting existing conventions or developing new ones. Some of these enhancements are specific to sea level data, while others are applicable to time-series data in general.

  13. Quantifying Multi-Objective Tradeoffs under Deep Uncertainty in the Design of Sea-Level Rise Adaptation Strategies

    NASA Astrophysics Data System (ADS)

    Oddo, P.; Garner, G. G.; Lee, B. S.; Forest, C. E.; Keller, K.

    2015-12-01

    Sea-levels are rising in many areas around the world, posing risks for coastal communities and infrastructures. Strategies to manage these flood risks are often designed using decision analytical tools that integrate key geophysical, economic, and technological models. Previous studies analyzing sea-level rise adaptation strategies have broken important new ground, but are often silent on the effects of potentially important deep uncertainties and the trade-offs between diverse objectives. Here we implement and improve on a previously published model (van Dantzig, 1956) to represent multiple stakeholder objectives as well as deep uncertainties surrounding model structures and parameters. We analyze the robustness of different strategies in the face of the deep uncertainties and apply global sensitivity analyses to identify key decision-relevant uncertainties.

  14. Detection of deep levels and compensation mechanism in undoped, liquid-encapsulated Czochralski n-type GaAs

    NASA Astrophysics Data System (ADS)

    Siegel, W.; Kühnel, G.; Schneider, H. A.; Witte, H.; Flade, T.

    1991-02-01

    Undoped n-GaAs with a 300 K resistivity between 10-1 and 108 Ω cm (electron concentration between 1×107 and 5×1015 cm-3 ) grown in quartz crucibles by the liquid-encapsulated Czochralski (LEC) technique was investigated by thermally stimulated current (TSC), temperature-dependent Hall effect (TDH), and deep-level transient spectroscopy (DLTS). Using Schottky contacts the TSC method could be extended to medium-resistivity samples. The strongly varying electron concentrations are correlated to varying TDH activation energies. The correlation between the donors dominating the electrical equilibrium properties and the electron traps detected by TSC and DLTS is discussed. Medium-deep and deep levels are present in this LEC material in such high concentrations that they must be taken into account in the compensation mechanism.

  15. High levels of natural radioactivity in biota from deep-sea hydrothermal vents: a preliminary communication.

    PubMed

    Charmasson, Sabine; Sarradin, Pierre-Marie; Le Faouder, Antoine; Agarande, Michèle; Loyen, Jeanne; Desbruyères, Daniel

    2009-06-01

    Hydrothermal deep-sea vent fauna is naturally exposed to a peculiar environment enriched in potentially toxic species such as sulphides, heavy metals and natural radionuclides. It is now well established that some of the organisms present in such an environment accumulate metals during their lifespan. Though only few radionuclide measurements are available, it seems likely that hydrothermal vent communities are exposed to high natural radiation doses. Various archived biological samples collected on the East Pacific Rise and the Mid-Atlantic Ridge in 1996, 2001 and 2002 were analysed by ICP-MS in order to determine their uranium contents ((238)U, (235)U and (234)U). In addition (210)Po-Pb were determined in 2 samples collected in 2002. Vent organisms are characterized by high U, and Po-Pb levels compared to what is generally encountered in organisms from outside hydrothermal vent ecosystems. Though the number of data is low, the results reveal various trends in relation to the site, the location within the mixing zone and/or the organisms' trophic regime.

  16. Deep Level Tight-Binding Model for Transition Metal Dopant States in Diamond

    NASA Astrophysics Data System (ADS)

    Kortan, Victoria; Sahin, Cuneyt; Flatté, Michael

    2012-02-01

    Diamond is a promising system for quantum information processing [1], providing the possibility of single-spin-photon entanglement, as well as the potential for high-speed spin manipulation at room temperature (such as has been demonstrated for the electronic spin associated with an NV center [2]). Ion implantation has been demonstrated for controllable positioning of NV centers; in principle other dopants could be so implanted as well. For example, transition-metal dopants could potentially be used as optically and electrically active single spin qubits [3]. Here we use a deep level tight binding model to study the electronic trends and defect wave functions of transition-metal dopants in diamond. Starting with the Green's functions of homogeneous diamond (within an spds* tight-binding model), a Koster-Slater approach is used to evaluate the defect state. This work is supported by an AFOSR MURI.[4pt] [1] A. M. Stoneham, A. H. Harker and G. W. Morley, J. Phys.: Condns. Matter 21, 364222 (2009).[0pt] [2] R. Hanson, O. Gywat and D. D. Awschalom, Phys. Rev. B. 74, 161203(r) (2006).[0pt] [3] R. Larico, et. al., Phys. Rev. B. 79, 115202 (2009).

  17. A model for heat flow in deep borehole disposals of high-level nuclear waste

    NASA Astrophysics Data System (ADS)

    Gibb, Fergus G. F.; Travis, Karl P.; McTaggart, Neil A.; Burley, David

    2008-05-01

    Deep borehole disposal (DBD) is emerging as a viable alternative to mined repositories for many forms of highly radioactive waste. It is geologically safer, more secure, less environmentally disruptive and potentially more cost-effective. All high-level wastes generate heat leading to elevated temperatures in and around the disposal. In some versions of DBD this heat is an essential part of the disposal while in others it affects the performances of materials and waste forms and can threaten the success of the disposal. Different versions of DBD are outlined, for all of which it is essential to predict the distribution of temperature with time. A generic physical model is established and a mathematical model set up involving the transient conductive heat flow differential equation for a cylindrical source term with realistic decay. This equation is solved using the method of Finite Differences. A Fortran computer code (GRANITE) has been developed for the model in the context of DBD and validated against theoretical and other benchmarks. The limitations of the model, code, input parameters and data used are discussed and it is concluded that the model provides a satisfactory basis for predicting temperatures in DBD. Examples of applications to some DBD scenarios are given and it is shown that the results are essential to the design strategy of the DBD versions, geometric details and choice of materials used. Without such modeling it would be impossible to progress DBD of nuclear wastes; something that is now being given serious consideration in several countries.

  18. Total circulating microparticle levels are increased in patients with deep infiltrating endometriosis.

    PubMed

    Munrós, J; Martínez-Zamora, M A; Tàssies, D; Coloma, J L; Torrente, M A; Reverter, J C; Carmona, F; Balasch, J

    2017-02-01

    Are the levels of total circulating cell-derived microparticles (cMPs) and circulating tissue factor-containing microparticles (cMP-TF) increased in patients with endometriosis? The levels of total cMP, but not cMP-TF, were higher in patients with endometriosis, and these were attributed to higher levels in patients with deep infiltrating endometriosis (DIE). Previous studies have reported elevated levels of total cMP in inflammatory conditions as well as higher levels of other inflammatory biomarkers in endometriosis. Increased expression of tissue factor (a transmembrane receptor for Factor VII/VIIa) in eutopic and ectopic endometrium from patients with endometriosis has been described. There is no previous data regarding total cMP and cMP-TF levels in patients with endometriosis. A prospective case-control study including two groups of patients was carried out. The E group included 65 patients with surgically confirmed endometriosis (37 with DIE lesions) and the C group comprises 33 women without surgical findings of any form of endometriosis. Patients and controls were recruited during the same 10-month period. Controls were the next patient without endometriosis undergoing surgery, after including two patients with endometriosis. Venous blood samples for total cMP and cMP-TF determinations were obtained at the time of surgery, before anesthesia at a tertiary care center. To assess total cMP, an ELISA functional assay was used and cMP-TF activity in plasma was measured using an ELISA kit. Total cMP levels in plasma were higher in the E group compared with the C group (P < 0.0001). The subanalysis of endometriosis patients with DIE or with ovarian endometriomas without DIE showed that total cMP levels were higher in the DIE group (P = 0.001). There were no statistically significant differences in cMP-TF levels among the groups analyzed. This is a preliminary study in which the sample size was arbitrarily decided, albeit in keeping with previous studies analyzing

  19. Effects of Crystal Growth Methods on Deep-Level Defects and Electrical Properties of CdZnTe:In Crystals

    NASA Astrophysics Data System (ADS)

    Xu, Lingyan; Jie, Wanqi; Zhou, Boru; Fu, Xu; Zha, Gangqiang; Wang, Tao; Xu, Yadong; Feng, Tao; Chen, Xi

    2015-01-01

    Deep-level defects in CdZnTe:In (CZT) crystals grown by the modified vertical Bridgman (MVB) method and the traveling heater method (THM) were comparatively studied by thermally stimulated current (TSC) measurements. The trap density of Cd vacancy-related acceptor defects is found to be lower in THM-grown crystals compared with crystals grown by the MVB method, since the relatively low growth temperature of the THM will greatly reduce the loss of Cd and decrease the generation of Cd vacancies. Tellurium antisite-related deep donors are dominant in MVB-grown CZT, and Te interstitial-related deep acceptors are dominant in THM-grown CZT crystals grown by the Te-rich solution technique. The compensation of donor and acceptor defects leads to a low concentration of net free electrons in n-type MVB-grown CZT and a relatively high concentration of net free holes in p-type THM-grown CZT. The Fermi level in MVB-grown CZT is positioned below the conduction band by the antisite-related deep donor, while that in THM-grown CZT is positioned above the valence band by the interstitial-related deep acceptor.

  20. Thermal-Mechanical Modeling of Deep Borehole Disposal of High-Level Radioactive Waste

    NASA Astrophysics Data System (ADS)

    Arnold, B. W.; Clayton, D. J.; Herrick, C. G.; Hadgu, T.

    2010-12-01

    Disposal of high-level radioactive waste, including spent nuclear fuel, in deep (3 to 5 km) boreholes is a potential option for safely isolating these wastes from the surface and near-surface environment. Existing drilling technology permits reliable and cost-effective construction of such deep boreholes. Conditions favorable for deep borehole disposal in crystalline basement rocks, including low permeability, high salinity, and geochemically reducing conditions, exist at depth in many locations, particularly in geologically stable continental regions. Isolation of waste depends, in part, on the effectiveness of borehole seals and potential alteration of permeability in the disturbed host rock surrounding the borehole. Coupled thermal-mechanical-hydrologic processes induced by heat from the radioactive waste may impact the disturbed zone near the borehole and borehole wall stability. Numerical simulations of the coupled thermal-mechanical response in the host rock surrounding the borehole were conducted with three software codes or combinations of software codes. Software codes used in the simulations were FEHM, JAS3D, Aria, and Adagio. Simulations were conducted for disposal of spent nuclear fuel assemblies and for the higher heat output of vitrified waste from the reprocessing of fuel. Simulations were also conducted for both isotropic and anisotropic ambient horizontal stress in the host rock. Physical, thermal, and mechanical properties representative of granite host rock at a depth of 4 km were used in the models. Simulation results indicate peak temperature increases at the borehole wall of about 30 °C and 180 °C for disposal of fuel assemblies and vitrified waste, respectively. Peak temperatures near the borehole occur within about 10 years and decline rapidly within a few hundred years and with distance. The host rock near the borehole is placed under additional compression. Peak mechanical stress is increased by about 15 MPa (above the assumed ambient

  1. Thermal-mechanical modeling of deep borehole disposal of high-level radioactive waste.

    SciTech Connect

    Arnold, Bill Walter; Hadgu, Teklu

    2010-12-01

    Disposal of high-level radioactive waste, including spent nuclear fuel, in deep (3 to 5 km) boreholes is a potential option for safely isolating these wastes from the surface and near-surface environment. Existing drilling technology permits reliable and cost-effective construction of such deep boreholes. Conditions favorable for deep borehole disposal in crystalline basement rocks, including low permeability, high salinity, and geochemically reducing conditions, exist at depth in many locations, particularly in geologically stable continental regions. Isolation of waste depends, in part, on the effectiveness of borehole seals and potential alteration of permeability in the disturbed host rock surrounding the borehole. Coupled thermal-mechanical-hydrologic processes induced by heat from the radioactive waste may impact the disturbed zone near the borehole and borehole wall stability. Numerical simulations of the coupled thermal-mechanical response in the host rock surrounding the borehole were conducted with three software codes or combinations of software codes. Software codes used in the simulations were FEHM, JAS3D, Aria, and Adagio. Simulations were conducted for disposal of spent nuclear fuel assemblies and for the higher heat output of vitrified waste from the reprocessing of fuel. Simulations were also conducted for both isotropic and anisotropic ambient horizontal stress in the host rock. Physical, thermal, and mechanical properties representative of granite host rock at a depth of 4 km were used in the models. Simulation results indicate peak temperature increases at the borehole wall of about 30 C and 180 C for disposal of fuel assemblies and vitrified waste, respectively. Peak temperatures near the borehole occur within about 10 years and decline rapidly within a few hundred years and with distance. The host rock near the borehole is placed under additional compression. Peak mechanical stress is increased by about 15 MPa (above the assumed ambient

  2. Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2

    DOE PAGES

    Li, Xufan; Puretzky, Alexander A.; Sang, Xiahan; ...

    2017-05-18

    Chemical vapor deposition (CVD) is one of the most promising, scalable synthetic techniques to enable large-area synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) for the realization of next generation optoelectronic devices. However, defects formed during the CVD growth process currently limit the quality and electronic properties of 2D TMDs. Effective synthesis and processing strategies to suppress defects and enhance the quality of 2D TMDs are urgently needed. In this work, isoelectrnic doping to produce stable alloy is presented as a new strategy to suppress defects and enhance photoluminescence (PL) in CVD-grown TMD monolayers. The random, isoelectronic substitution of Wmore » atoms for Mo atoms in CVD-grown monolayers of Mo1-xWxSe2 (02 monolayers. The resultant decrease in defect-medicated non-radiative recombination in the Mo0.82W0.18Se2 monolayers yielded ~10 times more intense PL and extended the carrier lifetime by a factor of 3 compared to pristine CVD-grown MoSe2 monolayers grown under similar conditions. Low temperatures (4 125 K) PL from defect-related localized states confirms theoretical predictions that isoelectronic W alloying should suppress deep levels in MoSe2, showing that the defect levels in Mo1-xWxSe2 monolayers are higher in energy and quenched more quickly than in MoSe2. Isoelectronic substitution therefore appears to be a promising synthetic method to control the heterogeneity of 2D TMDs to realize the scalable production of high performance optoelectronic and electronic devices.« less

  3. Perceived Deep-Level Dissimilarity: Personality Antecedents and Impact on Overall Job Attitude, Helping, Work Withdrawal, and Turnover

    ERIC Educational Resources Information Center

    Liao, Hui; Chuang, Aichia; Joshi, Aparna

    2008-01-01

    The current research extends three research areas in relational demography: considering deep-level dissimilarity in theory building, assessing dissimilarity perceptions directly in theory testing, and examining the antecedents of dissimilarity perceptions. The results, based on two field studies using diverse samples, demonstrate the effects of…

  4. Perceived Deep-Level Dissimilarity: Personality Antecedents and Impact on Overall Job Attitude, Helping, Work Withdrawal, and Turnover

    ERIC Educational Resources Information Center

    Liao, Hui; Chuang, Aichia; Joshi, Aparna

    2008-01-01

    The current research extends three research areas in relational demography: considering deep-level dissimilarity in theory building, assessing dissimilarity perceptions directly in theory testing, and examining the antecedents of dissimilarity perceptions. The results, based on two field studies using diverse samples, demonstrate the effects of…

  5. Transforming Passive Receptivity of Knowledge into Deep Learning Experiences at the Undergraduate Level: An Example from Music Theory

    ERIC Educational Resources Information Center

    Ferenc, Anna

    2015-01-01

    This article discusses transformation of passive knowledge receptivity into experiences of deep learning in a lecture-based music theory course at the second-year undergraduate level through implementation of collaborative projects that evoke natural critical learning environments. It presents an example of such a project, addresses key features…

  6. Impurities in nonlinear optical oxide crystals

    NASA Astrophysics Data System (ADS)

    Morris, Patricia A.

    1990-11-01

    Impurities in nonlinear optical oxide crystals can affect many of the properties for device applications. The structures of typical crystals are tolerant with respect to occupancy and are nonstoichiometric on the cation sublattices (e.g. the A sublattice in crystals with the general formula AMO 3). This may, at least in part, be due to the presence of the relatively strong covalent nature of the acentric oxide groups determining the nonlinear optical properties. These circumstances make the incorporation of impurities into the lattice relatively easy and result in large distribution coefficients for many impurities. Generally, little purification during growth will occur with respect to these impurities and therefore, it is usually necessary to purify the starting materials of any unwanted ions. Chemical or powder processing and firing procedures can be used to prevent any contamination of the crystal growth precursors by common impurities (e.g. Si, Al, Fe, Ca, Na, K, Mg, Cl, and S) at a level of <10 parts per million total concentration. A combination of analytical techniques, including those which require little or no sample preparation (e.g. secondary ion mass spectrometry, neutron activation analysis, or laser microprobe mass spectrometry), should be used to determine the impurities present in a material. For example, the effects of protons incorporated (OH -) in the lattice of these crystals can be very detrimental and can be detected using infrared spectroscopy. The growth of many of these crystals requires flux techniques, but the temperature dependence of any nonstoichiometry present and of the distribution coefficients make the use of slow cooling techniques generally not recommended when uniformity of properties is required.

  7. Comparison of bladder segmentation using deep-learning convolutional neural network with and without level sets

    NASA Astrophysics Data System (ADS)

    Cha, Kenny H.; Hadjiiski, Lubomir M.; Samala, Ravi K.; Chan, Heang-Ping; Cohan, Richard H.; Caoili, Elaine M.

    2016-03-01

    We are developing a CAD system for detection of bladder cancer in CTU. In this study we investigated the application of deep-learning convolutional neural network (DL-CNN) to the segmentation of the bladder, which is a challenging problem because of the strong boundary between the non-contrast and contrast-filled regions in the bladder. We trained a DL-CNN to estimate the likelihood of a pixel being inside the bladder using neighborhood information. The segmented bladder was obtained from thresholding and hole-filling of the likelihood map. We compared the segmentation performance of the DL-CNN alone and with additional cascaded 3D and 2D level sets to refine the segmentation using 3D hand-segmented contours as reference standard. The segmentation accuracy was evaluated by five performance measures: average volume intersection %, average % volume error, average absolute % error, average minimum distance, and average Jaccard index for a data set of 81 training and 92 test cases. For the training set, DLCNN with level sets achieved performance measures of 87.2+/-6.1%, 6.0+/-9.1%, 8.7+/-6.1%, 3.0+/-1.2 mm, and 81.9+/-7.6%, respectively, while the DL-CNN alone obtained the values of 73.6+/-8.5%, 23.0+/-8.5%, 23.0+/-8.5%, 5.1+/-1.5 mm, and 71.5+/-9.2%, respectively. For the test set, the DL-CNN with level sets achieved performance measures of 81.9+/-12.1%, 10.2+/-16.2%, 14.0+/-13.0%, 3.6+/-2.0 mm, and 76.2+/-11.8%, respectively, while DL-CNN alone obtained 68.7+/-12.0%, 27.2+/-13.7%, 27.4+/-13.6%, 5.7+/-2.2 mm, and 66.2+/-11.8%, respectively. DL-CNN alone is effective in segmenting bladders but may not follow the details of the bladder wall. The combination of DL-CNN with level sets provides highly accurate bladder segmentation.

  8. Pressure as a probe of deep levels and defects in semiconductors: GaAs, GaP and their alloys

    SciTech Connect

    Samara, G.A.

    1992-01-01

    Measurements of the effects of pressure on the thermal electron emission rate and capture cross section for a variety of deep electronic levels in GaAs, GaP and their alloys have yielded the pressure dependences of the energies of these levels in the bandgaps, allowed evaluation of the breathing mode lattice relaxations accompanying carrier emission or capture by these levels and revealed trends which lead to new insights into the nature of the responsible defects. Emphasis is on deep levels believed to be associated with simple defects. Specifically, results will be summarized for the donor levels of the dominant native defect known as EL2 in CAM, which is believed to be associated with the arsenic antisite, and on the radiation-induced El and E2 levels in GaAs, GaP and their alloys, which are believed to be due to arsenic (or phosphorous) vacancies. The results are discussed in terms of models for the defects responsible for these deep levels.

  9. Pressure as a probe of deep levels and defects in semiconductors: GaAs, GaP and their alloys

    SciTech Connect

    Samara, G.A.

    1992-10-01

    Measurements of the effects of pressure on the thermal electron emission rate and capture cross section for a variety of deep electronic levels in GaAs, GaP and their alloys have yielded the pressure dependences of the energies of these levels in the bandgaps, allowed evaluation of the breathing mode lattice relaxations accompanying carrier emission or capture by these levels and revealed trends which lead to new insights into the nature of the responsible defects. Emphasis is on deep levels believed to be associated with simple defects. Specifically, results will be summarized for the donor levels of the dominant native defect known as EL2 in CAM, which is believed to be associated with the arsenic antisite, and on the radiation-induced El and E2 levels in GaAs, GaP and their alloys, which are believed to be due to arsenic (or phosphorous) vacancies. The results are discussed in terms of models for the defects responsible for these deep levels.

  10. Analysis of the Effects of Impurities in Silicon. [to determine solar cell efficiency

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J. H.; Lafky, W. M.; Burkholder, J. H.

    1979-01-01

    A solar cell fabrication and analysis program to determine the effects on the resultant solar cell efficiency of impurities incorporated into silicon is conducted. Flight quality technologies and quality assurance are employed to assure that variations in cell performance are due to the impurities incorporated in the silicon. The type and level of impurity doping in each test lot is given and the mechanism responsible for the degradation of cell performance is identified and correlated to the doped impurities.

  11. Trace Level Quantification of the (-)2-(2-amino-5-chlorophenyl)-4-cyclopropyl-1,1,1-trifluoro-3-butyn-2-ol Genotoxic Impurity in Efavirenz Drug Substance and Drug Product Using LC-MS/MS.

    PubMed

    Jaishetty, Nagadeep; Palanisamy, Kamaraj; Maruthapillai, Arthanareeswari; Jaishetty, Rajamanohar

    2015-10-18

    Efavirenz is a non-nucleoside reverse transcriptase inhibitor used in the treatment of human immunodeficiency virus type-1 (HIV). (2S)-(2-Amino-5-chlorophenyl)-4-cyclopropyl-1,1,1-trifluoro-3-butyn-2-ol (AMCOL), used as an intermediate in the synthesis of efavirenz and a degradation impurity, has an aminoaryl derivative which is a well-known alerting function for genotoxic activity. Upon request from a regulatory agency, a selective and sensitive liquid chromatography-tandem mass spectrometry (LC-MS/MS) method was developed for trace level quantitative determination of AMCOL related compound of efavirenz, for a risk assessment and comparison of impurity levels with the commercially available innovator product (brand name: Sustiva). The method provided excellent sensitivity at a typical target analyte level of <2.5 ppm, an established threshold of toxicological concern (TTC), when the drug substance and drug product samples were prepared at 15.0 mg/mL. The AMCOL sample was analyzed on a Luna C18 (2) (100 mm × 4.6 mm, 3 µm) column interfaced with a triple quadrupole tandem mass spectrometer operated in a multiple reaction monitoring (MRM) mode. Positive electrospray ionization (ESI) was employed as the ionization source and the mobile phase used was 5.0 mM ammonium acetate-methanol (35:65, v/v). The calibration curve showed good linearity over the concentration range of 0.2-5.0 ppm with a correlation coefficient of >0.999. The limit of detection (LOD) and limit of quantification (LOQ) were found to be 0.07 and 0.2 ppm, respectively. The developed method was validated as per international council on harmonization (ICH) guidelines in terms of LOD, LOQ, linearity, precision, accuracy, specificity, and robustness.

  12. Trace Level Quantification of the (−)2-(2-amino-5-chlorophenyl)-4-cyclopropyl-1,1,1-trifluoro-3-butyn-2-ol Genotoxic Impurity in Efavirenz Drug Substance and Drug Product Using LC–MS/MS

    PubMed Central

    Jaishetty, Nagadeep; Palanisamy, Kamaraj; Maruthapillai, Arthanareeswari; Jaishetty, Rajamanohar

    2015-01-01

    Efavirenz is a non-nucleoside reverse transcriptase inhibitor used in the treatment of human immunodeficiency virus type-1 (HIV). (2S)-(2-Amino-5-chlorophenyl)-4-cyclopropyl-1,1,1-trifluoro-3-butyn-2-ol (AMCOL), used as an intermediate in the synthesis of efavirenz and a degradation impurity, has an aminoaryl derivative which is a well-known alerting function for genotoxic activity. Upon request from a regulatory agency, a selective and sensitive liquid chromatography–tandem mass spectrometry (LC–MS/MS) method was developed for trace level quantitative determination of AMCOL related compound of efavirenz, for a risk assessment and comparison of impurity levels with the commercially available innovator product (brand name: Sustiva). The method provided excellent sensitivity at a typical target analyte level of <2.5 ppm, an established threshold of toxicological concern (TTC), when the drug substance and drug product samples were prepared at 15.0 mg/mL. The AMCOL sample was analyzed on a Luna C18 (2) (100 mm × 4.6 mm, 3 µm) column interfaced with a triple quadrupole tandem mass spectrometer operated in a multiple reaction monitoring (MRM) mode. Positive electrospray ionization (ESI) was employed as the ionization source and the mobile phase used was 5.0 mM ammonium acetate-methanol (35:65, v/v). The calibration curve showed good linearity over the concentration range of 0.2–5.0 ppm with a correlation coefficient of >0.999. The limit of detection (LOD) and limit of quantification (LOQ) were found to be 0.07 and 0.2 ppm, respectively. The developed method was validated as per international council on harmonization (ICH) guidelines in terms of LOD, LOQ, linearity, precision, accuracy, specificity, and robustness. PMID:28117312

  13. Deep levels near the grain boundary in a zinc oxide varistor; Energy change due to electrical degradation

    SciTech Connect

    Tanaka, J.; Hishita, S. ); Okushi, H. )

    1990-05-01

    Localized deep levels in a ZnO varistor were investigated by isothermal capacitance transient spectroscopy, in relation to a degradation of nonlinear electrical characteristics caused by thermal treatment in a slightly reduced atmosphere. Two discrete deep levels were observed near the grain boundary. Before the degradation, they were located at 0.36 and 0.19 eV below a conduction band. After the degradation, they shifted toward the conduction band by 0.16 and 0.09 eV, respectively: the energy shift was not identical for the two levels. It is suggested that the energy shift of the localized levels reflected lattice disorders originally existing near the grain boundary or proper changes of chemical states induced by the reduction.

  14. Paleoclimate Impact on a Proposed Canadian Deep Geologic Repository for Low and Intermediate Level Radioactive Waste

    NASA Astrophysics Data System (ADS)

    Normani, S. D.; Sykes, J. F.; Yin, Y.

    2009-05-01

    A Deep Geologic Repository (DGR) for low and intermediate level radioactive waste has been proposed by Ontario Power Generation (OPG) for the Bruce site near Tiverton, Ontario Canada. As envisioned, the DGR is to be constructed at a depth of about 680 m below ground surface within the argillaceous Ordovician limestone of the Cobourg Formation. Within the geologic setting of southern Ontario, the Bruce site is located west of the Algonquin Arch within the Bruce Megablock, positioned along the eastern edge of the Michigan Basin. It is clear that to credibly address the long-term safety of a deep geologic repository, long-term climate change and in particular a glaciation scenario, must be incorporated into performance assessment modelling activities. In addition, by simulating flow system responses to the last Laurentide (North American) glacial episode, insight is gained into the role of significant past stresses (mechanical, thermal and hydrological) on determining the nature of present flow system conditions, and by extension, the likely impact of similar, future boundary condition changes on long-term flow system stability. The last Laurentide glacial episode was characterized by the following: occurred over a 120 000 year time period; included numerous cycles of glacial advance and retreat, with maximum ice thickness over a typical Ontario site reaching nearly 3 km; included extensive periods of transient, peri-glacial conditions during which permafrost could impact the subsurface, depending on location, to several hundreds of metres; and was accompanied by significant basal meltwater production near the end of the glacial episode. The impact of glaciation and deglaciation on density-dependent groundwater flow was investigated using results from the deterministic University of Toronto Glacial Systems Model (GSM) of continental ice-sheet evolution. The 18,500 km2 regional-scale domain extends from Lake Huron to Georgian Bay and includes 31 sedimentary strata that

  15. Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.

    PubMed

    Yang, J; Zhao, D G; Jiang, D S; Chen, P; Liu, Z S; Zhu, J J; Li, X J; He, X G; Liu, J P; Zhang, L Q; Yang, H; Zhang, Y T; Du, G T

    2016-06-27

    A series of samples with varying growth pressure are grown and their optical and structural properties are investigated. It is found that the residual carbon concentration decreases when the reactor pressure increases from 80 to 450 Torr during the InGaN/GaN multiple quantum well growth. It results in an enhanced peak intensity of electroluminescence because carbon impurities can induce deep energy levels and act as non-radiative recombination centers in InGaN layers.

  16. Trade Study of System Level Ranked Radiation Protection Concepts for Deep Space Exploration

    NASA Technical Reports Server (NTRS)

    Cerro, Jeffrey A

    2013-01-01

    A strategic focus area for NASA is to pursue the development of technologies which support exploration in space beyond the current inhabited region of low earth orbit. An unresolved issue for crewed deep space exploration involves limiting crew radiation exposure to below acceptable levels, considering both solar particle events and galactic cosmic ray contributions to dosage. Galactic cosmic ray mitigation is not addressed in this paper, but by addressing credible, easily implemented, and mass efficient solutions for the possibility of solar particle events, additional margin is provided that can be used for cosmic ray dose accumulation. As a result, NASA s Advanced Engineering Systems project office initiated this Radiation Storm Shelter design activity. This paper reports on the first year results of an expected 3 year Storm Shelter study effort which will mature concepts and operational scenarios that protect exploration astronauts from solar particle radiation events. Large trade space definition, candidate concept ranking, and a planned demonstration comprised the majority of FY12 activities. A system key performance parameter is minimization of the required increase in mass needed to provide a safe environment. Total system mass along with operational assessments and other defined protection system metrics provide the guiding metrics to proceed with concept developments. After a downselect to four primary methods, the concepts were analyzed for dosage severity and the amount of shielding mass necessary to bring dosage to acceptable values. Besides analytical assessments, subscale models of several concepts and one full scale concept demonstrator were created. FY12 work terminated with a plan to demonstrate test articles of two selected approaches. The process of arriving at these selections and their current envisioned implementation are presented in this paper.

  17. Systems analysis approach to the disposal of high-level waste in deep ocean sediments

    SciTech Connect

    de Marsily, G.; Hill, M. D.; Murray, C. N.; Talbert, D. M.; Van Dorp, F.; Webb, G. A.M.

    1980-01-01

    Among the different options being studied for disposal of high-level solidified waste, increasing attention is being paid to that of emplacement of glasses incorporating the radioactivity in deep oceanic sediments. This option has the advantage that the areas of the oceans under investigation appear to be relatively unproductive biologically, are relatively free from cataclysmic events, and are areas in which the natural processes are slow. Thus the environment is stable and predictable so that a number of barriers to the release and dispersion of radioactivity can be defined. Task Groups set up in the framework of the International Seabed Working Group have been studying many aspects of this option since 1976. In order that the various parts of the problem can be assessed within an integrated framework, the methods of systems analysis have been applied. In this paper the Systems Analysis Task Group members report the development of an overall system model. This will be used in an iterative process in which a preliminary analysis, together with a sensitivity analysis, identifies the parameters and data of most importance. The work of the other task groups will then be focussed on these parameters and data requirements so that improved results can be fed back into an improved overall systems model. The major requirements for the development of a preliminary overall systems model are that the problem should be separated into identified elements and that the interfaces between the elements should be clearly defined. The model evolved is deterministic and defines the problem elements needed to estimate doses to man.

  18. Increased Levels of NF-kB-Dependent Markers in Cancer-Associated Deep Venous Thrombosis.

    PubMed

    Malaponte, Grazia; Signorelli, Salvatore S; Bevelacqua, Valentina; Polesel, Jerry; Taborelli, Martina; Guarneri, Claudio; Fenga, Concettina; Umezawa, Kazou; Libra, Massimo

    2015-01-01

    Several studies highlight the role of inflammatory markers in thrombosis as well as in cancer. However, their combined role in cancer-associated deep vein thrombosis (DVT) and the molecular mechanisms, involved in its pathophysiology, needs further investigations. In the present study, C-reactive protein, interleukin-6 (IL-6), tumor necrosis factor-α (TNF-α), interleukin-1 (IL-1β), matrix metalloproteases-9 (MMP-9), vascular endothelial growth factor (VEGF), tissue factor (TF), fibrinogen and soluble P-selectin, were analyzed in plasma and in monocyte samples from 385 cancer patients, of whom 64 were concomitantly affected by DVT (+). All these markers were higher in cancer patients DVT+ than in those DVT-. Accordingly, significantly higher NF-kB activity was observed in cancer patients DVT+ than DVT-. Significant correlation between data obtained in plasma and monocyte samples was observed. NF-kB inhibition was associated with decreased levels of all molecules in both cancer DVT+ and DVT-. To further demonstrate the involvement of NF-kB activation by the above mentioned molecules, we treated monocyte derived from healthy donors with a pool of sera from cancer patients with and without DVT. These set of experiments further suggest the significant role played by some molecules, regulated by NF-kB, and detected in cancer patients with DVT. Our data support the notion that NF-kB may be considered as a therapeutic target for cancer patients, especially those complicated by DVT. Treatment with NF-kB inhibitors may represent a possible strategy to prevent or reduce the risk of DVT in cancer patients.

  19. The effect of secondary impurities on solar cell performance

    NASA Technical Reports Server (NTRS)

    Hill, D. E.; Gutsche, H. W.; Wang, M. S.; Gupta, K. P.; Tucker, W. F.; Dowdy, J. D.; Crepin, R. J.

    1976-01-01

    Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.

  20. The effect of secondary impurities on solar cell performance

    NASA Technical Reports Server (NTRS)

    Hill, D. E.; Gutsche, H. W.; Wang, M. S.; Gupta, K. P.; Tucker, W. F.; Dowdy, J. D.; Crepin, R. J.

    1976-01-01

    Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.

  1. Two-Step Inverse Modeling for Estimation of Channel Impurity Pile-up

    NASA Astrophysics Data System (ADS)

    Nagumo, Toshiharu; Takeuchi, Kiyoshi; Akiyama, Yutaka; Hane, Masami

    2008-04-01

    A scheme for estimating the amount of channel impurity pile-up using inverse modeling assuming a simplified effective impurity profile is proposed. Impurity profile is divided into deep and surface regions, and they are evaluated in two steps. In the first step, the impurity profile in the deep region is determined using the shift of threshold voltage, and then in the second step, the impurity profile in the surface region is determined using the threshold voltage. By taking drain-induced barrier lowering (DIBL) into account, this scheme can be used to estimate the effective impurity profile in short-channel devices, and thus, can be used to evaluate the gate length dependence of the channel impurity pile-up. Evaluated results on n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) indicate that the impurity pile-up is strong and gate-length-dependent in spike-annealed MOSFETs, whereas laser-annealed MOSFETs show almost no impurity pile-up. The proposed scheme can be used to clearly detect such process condition dependence, and therefore, is helpful for process optimization.

  2. Ablation rate and morphology of superficial and deep dentin irradiated with different Er:YAG laser energy levels.

    PubMed

    Raucci-Neto, Walter; Chinelatti, Michelle Alexandra; Palma-Dibb, Regina Guenka

    2008-12-01

    In this study we evaluated the ablation rate of superficial and deep dentin irradiated with different Er:YAG laser energy levels, and observed the micromorphological aspects of the lased substrates with a scanning electron microscope (SEM). Little is known about the effect of Er:YAG laser irradiation on different dentin depths. Sixty molar crowns were bisected, providing 120 specimens, which were randomly assigned into two groups (superficial or deep dentin), and later into five subgroups (160, 200, 260, 300, or 360 mJ). Initial masses of the specimens were obtained. After laser irradiation, the final masses were obtained and mass losses were calculated followed by the preparation of specimens for SEM examination. Mass-loss values were subjected to two-way ANOVA and Fisher's least significant difference multiple-comparison tests (p > 0.05). There was no difference between superficial and deep dentin. A significant and gradual increase in the mass-loss values was reached when energies were raised, regardless of the dentin depth. The energy level of 360 mJ showed the highest values and was statistically significantly different from the other energy levels. The SEM images showed that deep dentin was more selectively ablated, especially intertubular dentin, promoting tubule protrusion. At 360 mJ the micromorphological features were similar for both dentin depths. The ablation rate did not depend on the depth of the dentin, and an energy level lower than 360 mJ is recommended to ablate both superficial and deep dentin effectively without causing tissue damage.

  3. The relationship between the deep-level structure in crust and brewing of strong earthquakes in Xingtai area

    NASA Astrophysics Data System (ADS)

    Xiao, Lan-Xi; Zhu, Yuan-Qing; Zhang, Shao-Quan; Liu, Xu; Guo, Yu

    1999-11-01

    In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion, deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are draw as follows: (1) The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. (2) When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a, the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. (3) The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. (4) The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.

  4. First-principles study of carbon impurities in CuInSe{sub 2} and CuGaSe{sub 2}, present in non-vacuum synthesis methods

    SciTech Connect

    Bekaert, J. Saniz, R.; Partoens, B.; Lamoen, D.

    2015-01-07

    A first-principles study of the structural and electronic properties of carbon impurities in CuInSe{sub 2} and CuGaSe{sub 2} is presented. Carbon is present in organic molecules in the precursor solutions used in non-vacuum growth methods for CuInSe{sub 2} and CuGaSe{sub 2} based photovoltaic cells. These growth methods make more efficient use of material, time, and energy than traditional vacuum methods. The formation energies of several carbon impurities are calculated using the hybrid HSE06 functional. C{sub Cu} acts as a shallow donor, C{sub In} and interstitial C yield deep donor levels in CuInSe{sub 2}, while in CuGaSe{sub 2} C{sub Ga} and interstitial C act as deep amphoteric defects. So, these defects reduce the majority carrier (hole) concentration in p-type CuInSe{sub 2} and CuGaSe{sub 2} by compensating the acceptor levels. The deep defects are likely to act as recombination centers for the photogenerated charge carriers and are thus detrimental for the performance of the photovoltaic cells. On the other hand, the formation energies of the carbon impurities are high, even under C-rich growth conditions. Thus, few C impurities will form in CuInSe{sub 2} and CuGaSe{sub 2} in thermodynamic equilibrium. However, the deposition of the precursor solution in non-vacuum growth methods presents conditions far from thermodynamic equilibrium. In this case, our calculations show that C impurities formed in non-equilibrium tend to segregate from CuInSe{sub 2} and CuGaSe{sub 2} by approaching thermodynamic equilibrium, e.g., via thorough annealing.

  5. Silicon materials task of the Low-Cost Solar Array Project (Phase IV). Effects of impurities and processing on silicon solar cells. Nineteenth quarterly report, April 1980-June 1980

    SciTech Connect

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Rai-Choudhury, P.; Hanes, M.H.; Mollenkopf, H.C.; McCormick, J.R.

    1980-07-01

    The overall objective of this program is to define the effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells. The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Nine 4 ohm-cm p type silicon ingots were grown and evaluated in support of the experimental program this quarter. Of these, three were polycrystalline ingots doped with Cr, Mo, and V, respectively, produced under conditions which successfully eliminated the metal-rich inclusions formed when growth of these heavily-doped specimens was attempted during the last quarter. Evaluation of polycrystalline ingots doped to the mid 10/sup 13/ cm/sup -3/ range with Ti or V showed little evidence for grain boundary segregation. Deep level spectroscopy on both as-grown wafers and solar cells showed little variation in impurity concentration from place to place across the ingot regardless of the presence of grain boundaries or other structural features. Deep level spectroscopy was also used to monitor the electrically active impurity concentrations in ingots to be used for process studies, aging experiments, and high efficiency cells. The basic aspects of a model to describe efficiency behavior in high efficiency cells have been formulated and a computer routine is being implemented for back field type devices to analyze the functional relationships between impurity concentrations and cell performance.

  6. Isolation and structural elucidation of two impurities from a diacerein bulk drug.

    PubMed

    Ashok, Chaudhari; Golak, Maikap; Adwait, Deo; Krishna, Vivek; Himani, Agrawal; Umesh, Peshawe; Amol, Gawande; Srinivas, Sompalli; Sharad, Mane; Deepali, Jadhav; Atul, Chaudhari

    2009-02-20

    Two impurities were found in the crude sample of diacerein. The level of these impurities 1.14% and 1.24% were detected by isocratic reverse-phase high performance liquid chromatography (HPLC). The molecular weights of the impurities were determined by liquid chromatography-mass spectroscopy (LC-MS) analysis. These impurities were isolated from crude sample of diacerein by reverse-phase preparative liquid chromatography. These impurities were characterized as 5-acetoxy-4-hydroxy-9,10-dioxo-9,10-dihydroanthracene-2-carboxylic acid (Impurity-1) and 4-acetoxy-5-hydroxy-9,10-dioxo-9,10-dihydroanthracene-2-carboxylic acid (Impurity-2) respectively. Structural elucidation of both the impurities were carried out by (1)H NMR, (13)C NMR, DEPT, 1D NOESY, MS and IR spectroscopy.

  7. Long-range exchange interaction between magnetic impurities in graphene

    NASA Astrophysics Data System (ADS)

    Agarwal, M.; Mishchenko, E. G.

    2017-02-01

    The effective spin exchange RKKY coupling between impurities (adatoms) on graphene mediated by conduction electrons is studied as a function of the strength of the potential part of the on-site energy U of the electron-adatom interaction. With increasing U , the exchange coupling becomes long range, determined largely by the impurity levels with energies close to the Dirac points. When adatoms reside on opposite sublattices, their exchange coupling, normally antiferromagnetic, becomes ferromagnetic and resonantly enhanced at a specific distance where an impurity level crosses the Dirac point.

  8. Study of radiation induced deep-level defects in proton irradiated AlGaAs-GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Li, S. S.

    1980-01-01

    Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements.

  9. DeepStack: Expert-level artificial intelligence in heads-up no-limit poker.

    PubMed

    Moravčík, Matej; Schmid, Martin; Burch, Neil; Lisý, Viliam; Morrill, Dustin; Bard, Nolan; Davis, Trevor; Waugh, Kevin; Johanson, Michael; Bowling, Michael

    2017-05-05

    Artificial intelligence has seen several breakthroughs in recent years, with games often serving as milestones. A common feature of these games is that players have perfect information. Poker, the quintessential game of imperfect information, is a long-standing challenge problem in artificial intelligence. We introduce DeepStack, an algorithm for imperfect-information settings. It combines recursive reasoning to handle information asymmetry, decomposition to focus computation on the relevant decision, and a form of intuition that is automatically learned from self-play using deep learning. In a study involving 44,000 hands of poker, DeepStack defeated, with statistical significance, professional poker players in heads-up no-limit Texas hold'em. The approach is theoretically sound and is shown to produce strategies that are more difficult to exploit than prior approaches. Copyright © 2017, American Association for the Advancement of Science.

  10. Increased levels of dioxin-like substances in adipose tissue in patients with deep infiltrating endometriosis.

    PubMed

    Martínez-Zamora, M A; Mattioli, L; Parera, J; Abad, E; Coloma, J L; van Babel, B; Galceran, M T; Balasch, J; Carmona, F

    2015-05-01

    Are the levels of biologically active and the most toxic dioxin-like substances in adipose tissue of patients with deep infiltrating endometriosis (DIE) higher than in a control group without endometriosis? DIE patients have higher levels of dioxins and polychlorinated biphenyls (PCBs) in adipose tissue compared with controls without endometriosis. Some studies have investigated the levels of dioxin-like substances, in serum samples, in patients with endometriosis, with inconsistent results. Case-control study including two groups of patients. The study group (DIE group) consisted of 30 patients undergoing laparoscopic surgery because of DIE. In all patients, an extensive preoperative work-up was performed including clinical exploration, magnetic resonance imaging (MRI) and transvaginal sonography. All patients with DIE underwent a confirmatory histological study for DIE after surgery. The non-endometriosis control group (control group), included the next consecutive patient undergoing laparoscopic surgery in our center due to adnexal benign gynecological disease (ovarian or tubal procedures other than endometriosis) after each DIE patient, and who did not present any type of endometriosis. During the surgical procedure 1-2 g of adipose tissue from the omentum were obtained. Dioxin-like substances were analyzed in adipose tissue in DIE patients and controls without endometriosis. The total toxic equivalence and concentrations of both dioxins and PCBs were significantly higher in patients with DIE in comparison with the control group (P < 0.05), mainly due to the significantly higher values of the two most toxic dioxins (2,3,7,8-tetrachlorodibenzo-p-dioxin [2,3,7,8-TCDD] and 1,2,3,7,8-pentachlorodibenzo-p-dioxin [1,2,3,7,8-PeCDD]) (P < 0.01 for each compound). The levels of furan 2,3,4,7,8-PeCDF were statistically higher in the DIE group compared with controls. Only four congeners of PCBs had toxic equivalence values and concentrations that were statistically higher

  11. Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mannan, Mohammad A.

    2014-08-01

    High resolution Schottky barrier detectors for alpha particles were fabricated using 20 μm thick detector grade n-type 4H-SiC epitaxial layer. The Schottky barrier detectors were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Deep level transient spectroscopic (DLTS) measurements were carried out to identify and characterize the electrically active defect levels present in the epitaxial layers. The detection properties of the Schottky detectors were characterized in terms of alpha particle peak widths in pulse height spectra obtained using a standard alpha emitting radioisotope source. The differences in the performance of different detectors were correlated on the basis of the barrier properties and the deep level defect type, concentration, and capture cross-section. Varying degree of the presence of deep level defects was found to be the reason behind the leakage current variation and the difference in the ultimate detector performance observed among the detectors. From the DLTS data it was found that at least two defect centers located at Ec-0.6 eV (Z1/2) and at Ec -1.6 eV (EH6/7),both related to carbon vacancies, affected the detector performance the most.

  12. Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Gelczuk, Ł. E-mail: robert.kudrawiec@pwr.edu.pl; Dąbrowska-Szata, M.

    2016-05-14

    Deep-level defects were investigated by deep level transient spectroscopy on the as-grown and annealed GaNAs layers of various nitrogen (N) contents. The unintentionally doped (uid) GaNAs layers were grown by metalorganic vapor phase epitaxy with N = 1.4%, 2.0%, 2.2%, and 2.4% on GaAs substrate. The possible origin and evolution of the deep-level defects upon annealing were analyzed with the use of the GaNAs band gap diagram concept [Kudrawiec et al., Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of donor traps decreases with N-related downward shift of the conduction band. On the basis of this diagram and in comparison with previous results, the N-related traps were associated with (N−As){sub As} or (N−N){sub As} split interstitials. It was also proposed that one of the electron traps and the hole trap, lying at the same level position in the bandgap of the annealed uid-GaNAs layers, can both act as one generation-recombination center partially responsible for poor optical properties of this alloy.

  13. High water level impedes the adaptation of Polygonum hydropiper to deep burial: responses of biomass allocation and root morphology.

    PubMed

    Pan, Ying; Xie, Yong H; Deng, Zheng M; Tang, Yue; Pan, Dong D

    2014-07-08

    Many studies have investigated the individual effects of sedimentation or inundation on the performance of wetland plants, but few have examined the combined influence of these processes. Wetland plants might show greater morphological plasticity in response to inundation than to sedimentation when these processes occur simultaneously since inundation can negate the negative effects of burial on plant growth. Here, we evaluate this hypothesis by assessing growth of the emergent macrophyte Polygonum hydropiper under flooding (0 and 40 cm) and sedimentation (0, 5, and 10 cm), separately and in combination. Deep burial and high water level each led to low oxidation-reduction potential, biomass (except for 5-cm burial), and growth of thick, short roots. These characteristics were generally more significant under high water level than under deep burial conditions. More biomass was allocated to stems in the deep burial treatments, but more to leaves in the high water level treatments. Additionally, biomass accumulation was lower and leaf mass ratio was higher in the 40-cm water level + 10-cm burial depth treatment than both separate effects. Our data indicate that inundation plays a more important role than sedimentation in determining plant morphology, suggesting hierarchical effects of environmental stressors on plant growth.

  14. Effects of the impurity-host interactions on the nonradiative processes in ZnS:Cr

    NASA Astrophysics Data System (ADS)

    Tablero, C.

    2010-11-01

    There is a great deal of controversy about whether the behavior of an intermediate band in the gap of semiconductors is similar or not to the deep-gap levels. It can have significant consequences, for example, on the nonradiative recombination. In order to analyze the behavior of an intermediate band, we have considered the effect of the inward and outward displacements corresponding to breathing and longitudinal modes of Cr-doped ZnS and on the charge density for different processes involved in the nonradiative recombination using first-principles. This metal-doped zinc chalcogenide has a partially filled band within the host semiconductor gap. In contrast to the properties exhibited by deep-gap levels in other systems, we find small variations in the equilibrium configurations, forces, and electronic density around the Cr when the nonradiative recombination mechanisms modify the intermediate band charge. The charge density around the impurity is equilibrated in response to the perturbations in the equilibrium nuclear configuration and the charge of the intermediate band. The equilibration follows a Le Chatelier principle through the modification of the contribution from the impurity to the intermediate band and to the valence band. The intermediate band introduced by Cr in ZnS for the concentrations analyzed makes the electronic capture difficult and later multiphonon emission in the charge-transfer processes, in accordance with experimental results.

  15. Relationship of deep defects to oxygen and hydrogen content in nanocrystalline silicon photovoltaic materials

    SciTech Connect

    Hugger, Peter G.; Cohen, J. David; Yan Baojie; Yue Guozhen; Yang, Jeffrey; Guha, Subhendu

    2010-12-20

    We report measurements of the structural and compositional properties of a range of hydrogenated nanocrystalline films. We employed Raman spectroscopy for crystallinity and time-of-flight secondary ion mass spectroscopy (TOF-SIMS) for impurity characterizations. The crystalline volume fractions and impurity levels are correlated with the deep state densities determined by drive level capacitance profiling. Those defects were found to have a thermal emission energy of 0.65{+-}.05 eV. We found that the overall crystallinity correlated reasonably well with the density of such defect states and also found a strong correlation between the defect density and the levels of oxygen impurities. Possible origins of these defects are discussed.

  16. Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode

    NASA Astrophysics Data System (ADS)

    Amor, S.; Ahaitouf, A.; Ahaitouf, Az; Salvestrini, J. P.; Ougazzaden, A.

    2017-01-01

    It is shown that deep level transient spectroscopy can be carried out on Schottky diodes to investigate, in addition to majority carrier traps, minority carrier traps. This is possible thanks to the application of a large reverse bias to the device which allows minority carrier injection by lowering their corresponding effective Schottky barrier height. Indeed, when increasing the reverse bias voltage, the deep level transient spectroscopy signal, initially negative and thus showing only majority carrier traps signature, becomes positive, revealing minority carrier traps involvement. A careful analysis of the recorded spectra leads to the identification of four minority carrier traps which have been so far only evidenced using dedicated technique such as minority carrier transient spectroscopy.

  17. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  18. EL2 and related defects in GaAs - Challenges and pitfalls. [microdefect introducing a deep donor level

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The incorporation process of nonequilibrium vacancies in melt-grown GaAs is strongly complicated by deviations from stoichiometry and the presence of two sublattices. Many of the microdefects originating in these vacancies and their interactions introduce energy levels (shallow and deep) within the energy gap. The direct identification of the chemical or structural signature of these defects and its direct correlation to their electronic behavior is not generally possible. It is necessary, therefore, to rely on indirect methods and phenomenological models and deal with the associated pitfalls. EL2, a microdefect introducing a deep donor level, has been in the limelight in recent years because it is believed to be responsible for the semi-insulating behavior of undoped GaAs. Although much progress has been made towards understanding its origin and nature, some relevant questions remain unanswered. An attempt is made to assess the present status of understanding of EL2 in the light of most recent results.

  19. Influence of EL2 deep level on photoconduction of semi-insulating GaAs under ultrashort pulse photoinjection

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Xie, Guangyong

    2016-02-01

    To investigate the influence of EL2 deep level on photoconduction of in semi-insulating GaAs (SI-GaAs), a 3 mm-electrode-gap lateral SI-GaAs photoconductive chip was manufactured and tested by using ultrashort pulse laser with 1064 nm wavelength, 10 ns pulsewidth, 3.0 mm light spot diameter and single pulse energy mean of 3.0 mJ. Based on the experimental results and the theory of trapping effect, the photon absorption process of EL2 defects in SI-GaAs is analyzed. For the influence of EL2 deep level, the lifetime of the electron gets shorter and the persistent photoconductivity (PPC) is significant. With increasing of voltage, the decay time constant of photoconduction is reduced and the decay index gets bigger for the ultrashort pulse photoinjection.

  20. Effect of impurity doping in gapped bilayer graphene

    SciTech Connect

    Han, Qi; Yan, Baoming; Jia, Zhenzhao; Niu, Jingjing; Yu, Dapeng; Wu, Xiaosong

    2015-10-19

    Impurity doping plays a pivotal role in semiconductor electronics. We study the doping effect in a two-dimensional semiconductor, gapped bilayer graphene. By employing in situ deposition of calcium on the bilayer graphene, dopants are controllably introduced. Low temperature transport results show a variable range hopping conduction near the charge neutrality point persisting up to 50 K, providing evidence for the impurity levels inside the gap. Our experiment confirms a predicted peculiar effect in the gapped bilayer graphene, i.e., formation of in-gap states even if the bare impurity level lies in the conduction band. The result provides perspective on the effect of doping and impurity levels in semiconducting bilayer graphene.

  1. Study of deep level characteristics in the neutrons irradiated Si structures by combining pulsed and steady-state spectroscopy techniques

    NASA Astrophysics Data System (ADS)

    Gaubas, E.; Kalendra, V.; Ceponis, T.; Uleckas, A.; Tekorius, A.; Vaitkus, J.; Velicka, A.

    2012-11-01

    The standard methods, such as capacitance deep level transient spectroscopy (C-DLTS) and thermally stimulated current (TSC) techniques are unsuitable for the analysis of heavily irradiated devices. In this work, therefore, several steady-state and pulsed techniques have been combined to comprehensively evaluate parameters of radiation defects and functional characteristics of the irradiated Si pin detectors. In order to understand defects created by radiation and evaluate their evolution with fluence, C-DLTS and TSC techniques have been employed to make a baseline identification of the radiation induced traps after irradiation with a rather small neutron fluence of 1012 cm-2. The steady-state photo-ionization spectroscopy (PIS) technique has been involved to correlate thermal- and photo- activation energies for definite radiation defects. A contactless technique for simultaneous measurements of the carrier lifetime and the parameters of deep levels based on microwave probed pulsed photo-conductivity (MW-PC) spectroscopy has been applied to correlate carrier capture cross-sections and densities of the identified different radiation defects. A technique for spectroscopy of deep levels in junction structures (BELIV) based on measurements of barrier capacitance charging current transient changes due to additional spectrally resolved pulsed illumination has been applied to evaluate the functional characteristics of the irradiated diodes. Pulsed spectroscopic measurements were implemented by combining the analysis of generation current and of barrier capacitance charging transients modified by a single fs pulse of illumination generated by an optical parametric oscillator of varied wavelength in the range from 0.5 to 10 μm. Several deep levels with activation energy in the range of 0.18-0.8 eV have been resolved from spectral analysis in the samples of Si grown by magnetic field applied Czochralski (MCz) technology.

  2. Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism

    SciTech Connect

    Wakita, Masaki; Suzuki, Kei; Shinozuka, Yuzo

    2014-02-21

    We simulated the time evolution of electron-lattice coupling mode, and a series of nonradiative carrier captures by a deep-level defect in a semiconductor. For lattice relaxation energy of the order of the band gap, a series of coherent (athermal) electron and hole captures by a defect is possible for high carrier densities, which results in an inflation in the induced lattice vibration, which in turn enhances a defect reaction.

  3. Studies of deep level transient spectroscopy of DX centers in GaAlAs: Te under uniaxial stress

    SciTech Connect

    Li, Ming-Fu |; Yu, Y.P. |; Weber, E.R.; Haller, E.E. |; Hansen, W.L.; Bauser, E.

    1991-11-01

    DX centers in Al{sub 0.38}Ga{sub 0.62}As doped with Te have been studied by Deep Level Transient Spectroscopy (DLTS) as a function of uniaxial stress. No splitting nor broadening of the DLTS peaks were observed. However, the peak positions and heights depend on the stress and its directions. The results have been analyzed by comparison with existing models and hydrostatic pressure measurements.

  4. Distribution Coefficients of Impurities in Metals

    NASA Astrophysics Data System (ADS)

    Pearce, J. V.

    2014-04-01

    Impurities dissolved in very pure metals at the level of parts per million often cause an elevation or depression of the freezing temperature of the order of millikelvins. This represents a significant contribution to the uncertainty of standard platinum resistance thermometer calibrations. An important parameter for characterizing the behavior of impurities is the distribution coefficient , which is the ratio of the solid solubility to liquid solubility. A knowledge of for a given binary system is essential for contemporary methods of evaluating or correcting for the effect of impurities, and it is therefore of universal interest to have the most complete set of values possible. A survey of equilibrium values of (in the low concentration limit) reported in the literature for the International Temperature Scale of 1990 fixed points of Hg, Ga, In, Sn, Zn, Al, Au, Ag, and Cu is presented. In addition, thermodynamic calculations of using MTDATA are presented for 170 binary systems. In total, the combined values of from all available sources for 430 binary systems are presented. In addition, by considering all available values of for impurities in 25 different metal solvents (1300 binary systems) enough data are available to characterize patterns in the value of for a given impurity as a function of its position in the periodic table. This enables prediction of for a significant number of binary systems for which data and calculations are unavailable. By combining data from many sources, values of for solutes (atomic number from 1 to 94) in ITS-90 fixed points from Hg to Cu are suggested, together with some tentative predicted values where literature data and calculations are unavailable.

  5. Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality

    SciTech Connect

    Hou, Dongchao; Voss, Tobias; Ronning, Carsten; Menzel, Andreas; Zacharias, Margit

    2014-06-21

    The excitation-intensity dependence of the excitonic near-band-edge emission (NBE) and deep-level related emission (DLE) bands in ZnO nanowires and bulk crystals is studied, which show distinctly different power laws. The behavior can be well explained with a rate-equation model taking into account deep donor and acceptor levels with certain capture cross sections for electrons from the conduction band and different radiative lifetimes. In addition, a further crucial ingredient of this model is the background n-type doping concentration inherent in almost all ZnO single crystals. The interplay of the deep defects and the background free-electron concentration in the conduction band at room temperature reproduces the experimental results well over a wide range of excitation intensities (almost five orders of magnitude). The results demonstrate that for many ZnO bulk samples and nanostructures, the relative intensity R = I{sub NBE}/I{sub DLE} can be adjusted over a wide range by varying the excitation intensity, thus, showing that R should not be taken as an indicator for the crystalline quality of ZnO samples unless absolute photoluminescence intensities under calibrated excitation conditions are compared. On the other hand, the results establish an all-optical technique to determine the relative doping levels in different ZnO samples by measuring the excitation-intensity dependence of the UV and visible luminescence bands.

  6. Studies of deep trapping levels in undoped and Sn-doped Cd1-xZnxTe by thermoelectric effect spectroscopy and thermally stimulated current

    NASA Astrophysics Data System (ADS)

    Krsmanovic, Nemanja; Hunt, Alan W.; Lynn, Kelvin G.; Flint, Patrick J.; Glass, Howard L.

    2000-11-01

    Thermoelectric effect spectroscopy (TEES) and thermally stimulated current (TSC) were used to study the deep trapping levels in undoped and Sn doped Cd1-xZnxTe crystals. Temperature maximum, varying heating rate and initial rise methods were used to extract activation energies and trapping cross sections of the deep trapping levels in the samples. The concentration of deep levels was estimated from the resistivity data using Neumark model. The pure sample had deep trapping levels with ionization energies of EV + 0.73 eV and EV + 0.74 eV. The concentration of the deep levels was estimated at 500 ppb. These deep levels were associated with intrinsic defects due to Cd vacancies and Te antisites. In the Sn doped samples deep levels at EV + 0.34 eV, EV + 0.55 eV and EV + 0.73 eV were observed. The level at EV + 0.55 eV was associated with Sn, while the EV + 0.34 eV and EV + 0.73 eV levels were associated with Cd vacancies. The concentration of these levels was estimated a 10000 ppb. The pulse height measurements on these samples indicated that Sn doping did not improve the detector performance.

  7. Reducing production of taste and odor by deep-living cyanobacteria in drinking water reservoirs by regulation of water level.

    PubMed

    Su, Ming; Jia, Dongmin; Yu, Jianwei; Vogt, Rolf D; Wang, Jingshi; An, Wei; Yang, Min

    2017-01-01

    Abatement and control of algae, producing toxins and creating taste & odor (T&O) in drinking water sources, is a major challenge for water supply. In this study we proposed a strategy based on water level regulation for the control of odor-producing cyanobacteria in source water. Miyun Reservoir, the main surface water source for Beijing, has been suffering from 2-methylisoborneol (2-MIB) induced T&O problems caused by deep-living Planktothrix sp. since 2002. The biomass of deep-living Planktothrix in Miyun Reservoir was found to be mainly governed by the water depth above its sediment habitat. An algorithm for water level regulation aiming to minimize the risk for T&O in different types of reservoirs is proposed. The study demonstrates that risk for T&O can be minimized by increasing the water level in Miyun Reservoir. The high-risk area can be reduced by about 2.91% (0.61% to 5.76%) of surface area for each meter increase in the water level, when the water level is lower than 145m. More specifically, the water level needs to be raised to higher than 147.7ma.s.l. from 131.0m in order to obtain an acceptable risk level (ARL) of 10%. This management strategy to abate T&O problems is simpler and cheaper to implement compared to traditional physical, chemical and biological techniques. Moreover, it has no apparent negative impact on water quality and aquatic organisms.

  8. Related impurities in peptide medicines.

    PubMed

    D'Hondt, Matthias; Bracke, Nathalie; Taevernier, Lien; Gevaert, Bert; Verbeke, Frederick; Wynendaele, Evelien; De Spiegeleer, Bart

    2014-12-01

    Peptides are an increasingly important group of pharmaceuticals, positioned between classic small organic molecules and larger bio-molecules such as proteins. Currently, the peptide drug market is growing twice as fast as other drug markets, illustrating the increasing clinical as well as economical impact of this medicine group. Most peptides today are manufactured by solid-phase peptide synthesis (SPPS). This review will provide a structured overview of the most commonly observed peptide-related impurities in peptide medicines, encompassing the active pharmaceutical ingredients (API or drug substance) as well as the finished drug products. Not only is control of these peptide-related impurities and degradants critical for the already approved and clinically used peptide-drugs, these impurities also possess the capability of greatly influencing initial functionality studies during early drug discovery phases, possibly resulting in erroneous conclusions. The first group of peptide-related impurities is SPPS-related: deletion and insertion of amino acids are related to inefficient Fmoc-deprotection and excess use of amino acid reagents, respectively. Fmoc-deprotection can cause racemization of amino acid residues and thus diastereomeric impurities. Inefficient deprotection of amino acid side chains results into peptide-protection adducts. Furthermore, unprotected side chains can react with a variety of reagents used in the synthesis. Oxidation of amino acid side chains and dimeric-to-oligomeric impurities were also observed. Unwanted peptide counter ions such as trifluoroacetate, originating from the SPPS itself or from additional purification treatments, may also be present in the final peptide product. Contamination of the desired peptide product by other unrelated peptides was also seen, pointing out the lack of appropriate GMP. The second impurity group results from typical peptide degradation mechanisms such as β-elimination, diketopiperazine, pyroglutamate

  9. Development of a Universal Canister for Disposal of High-Level Waste in Deep Boreholes.

    SciTech Connect

    Price, Laura L.; Gomberg, Steve

    2015-11-01

    The mission of the United States Department of Energy’s Office of Environmental Management is to complete the safe cleanup of the environmental legacy brought about from five decades of nuclear weapons development and government-sponsored nuclear energy research. Some of the wastes that must be managed have been identified as good candidates for disposal in a deep borehole in crystalline rock. In particular, wastes that can be disposed of in a small package are good candidates for this disposal concept. A canister-based system that can be used for handling these wastes during the disposition process (i.e., storage, transfer, transportation, and disposal) could facilitate the eventual disposal of these wastes. Development of specifications for the universal canister system will consider the regulatory requirements that apply to storage, transportation, and disposal of the capsules, as well as operational requirements and limits that could affect the design of the canister (e.g., deep borehole diameter). In addition, there are risks and technical challenges that need to be recognized and addressed as Universal Canister system specifications are developed. This paper provides an approach to developing specifications for such a canister system that is integrated with the overall efforts of the DOE’s Used Fuel Disposition Campaign's Deep Borehole Field Test and compatible with planned storage of potential borehole-candidate wastes.

  10. Mobile impurities in ferromagnetic liquids

    NASA Astrophysics Data System (ADS)

    Kantian, Adrian; Schollwoeck, Ulrich; Giamarchi, Thierry

    2011-03-01

    Recent work has shown that mobile impurities in one dimensional interacting systems may exhibit behaviour that differs strongly from that predicted by standard Tomonaga-Luttinger liquid theory, with the appearance of power-law divergences in the spectral function signifying sublinear diffusion of the impurity. Using time-dependent matrix product states, we investigate a range of cases of mobile impurities in systems beyond the analytically accessible examples to assess the existence of a new universality class of low-energy physics in one-dimensional systems. Correspondence: Adrian.Kantian@unige.ch This work was supported in part by the Swiss SNF under MaNEP and division II.

  11. Resonant soliton-impurity interactions

    NASA Astrophysics Data System (ADS)

    Kivshar, Yuri S.; Fei, Zhang; Vázquez, Luis

    1991-09-01

    We describe a new type of soliton-impurity interaction and demonstrate that the soliton can be totally reflected by an attractive impurity if its initial velocity lies in certain resonance ``windows.'' This effect has an analogy with the resonance phenomena in kink-antikink collisions [Campbell, Schonfeld, and Wingate, Physica (Amsterdam) 9D, 1 (1983)], and it can be explained by a resonant energy exchange between the soliton and the impurity mode. Taking the sine-Gordon and φ4 models as examples, we find a number of resonance windows by numerical simulations and develop a collective-coordinate approach to describe the effect analytically.

  12. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  13. Recent trends in the impurity profile of pharmaceuticals

    PubMed Central

    Pilaniya, Kavita; Chandrawanshi, Harish K.; Pilaniya, Urmila; Manchandani, Pooja; Jain, Pratishtha; Singh, Nitin

    2010-01-01

    Various regulatory authorities such as the International Conference on Harmonization (ICH), the United States Food and Drug administration (FDA), and the Canadian Drug and Health Agency (CDHA) are emphasizing on the purity requirements and the identification of impurities in Active Pharmaceutical Ingredients (APIs). The various sources of impurity in pharmaceutical products are — reagents, heavy metals, ligands, catalysts, other materials like filter aids, charcoal, and the like, degraded end products obtained during \\ after manufacturing of bulk drugs from hydrolysis, photolytic cleavage, oxidative degradation, decarboxylation, enantiomeric impurity, and so on. The different pharmacopoeias such as the British Pharmacopoeia, United State Pharmacopoeia, and Indian Pharmacopoeia are slowly incorporating limits to allowable levels of impurities present in APIs or formulations. Various methods are used to isolate and characterize impurities in pharmaceuticals, such as, capillary electrophoresis, electron paramagnetic resonance, gas–liquid chromatography, gravimetric analysis, high performance liquid chromatography, solid-phase extraction methods, liquid–liquid extraction method, Ultraviolet Spectrometry, infrared spectroscopy, supercritical fluid extraction column chromatography, mass spectrometry, Nuclear magnetic resonance (NMR) spectroscopy, and RAMAN spectroscopy. Among all hyphenated techniques, the most exploited techniques for impurity profiling of drugs are Liquid Chromatography (LC)-Mass Spectroscopy (MS), LC-NMR, LC-NMR-MS, GC-MS, and LC-MS. This reveals the need and scope of impurity profiling of drugs in pharmaceutical research. PMID:22247862

  14. Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits

    SciTech Connect

    Baik, Chan-Wook Young Ahn, Ho; Kim, Yongsung; Lee, Jooho; Hong, Seogwoo; Hee Choi, Jun; Kim, Sunil; Hun Lee, Sang; Min Kim, Jong; Hwang, Sungwoo; Yeon Jun, So; Yu, SeGi; Lawrence Ives, R.

    2014-01-13

    A multi-level microstructure is proposed for terahertz slow-wave circuits, with dispersion relation retrieved by scattering parameter measurements. The measured return loss shows strong resonances above the cutoff with negligible phase shifts compared with finite element analysis. Splitting the circuit into multi levels enables a low aspect ratio configuration that alleviates the loading effect of deep-reactive-ion etching on silicon wafers. This makes it easier to achieve flat-etched bottom and smooth sidewall profiles. The dispersion retrieved from the measurement, therefore, corresponds well to the theoretical estimation. The result provides a straightforward way to the precise determination of dispersions in terahertz vacuum electronics.

  15. Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

    SciTech Connect

    Lee, In-Hwan; Polyakov, A. Y.; Turutin, A. V.; Shemerov, I. V.; Smirnov, N. B.; Yakimov, E. B.; Tarelkin, S. A.; Pearton, S. J.

    2016-05-28

    A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near E{sub c}-0.56 eV in limiting the lifetime and diffusion length values in all these materials.

  16. Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

    NASA Astrophysics Data System (ADS)

    Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Yakimov, E. B.; Tarelkin, S. A.; Turutin, A. V.; Shemerov, I. V.; Pearton, S. J.

    2016-05-01

    A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near Ec-0.56 eV in limiting the lifetime and diffusion length values in all these materials.

  17. Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by deep level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Mondal, Sandip; Koteswara Rao, K. S. R.

    2017-03-01

    The native defects in zirconium oxide (ZrO2) and defects at the ZrO2/Si interface lead to threshold voltage shifts, Fermi level pinning, and various other reliability concerns. It is necessary to recognize the origin of these defects and to quantify them. A large number of theoretical reports deal with oxygen vacancy related defect states in the ZrO2 films; however, the large band gap limits the experimental assessments. In this study, we have deployed Deep Level Transient Spectroscopy to study the deep level defects present in high-κ ZrO2 gate dielectrics and at the Si:ZrO2 interface. The band alignment of the Al/ZrO2/Si stack was derived from Ultraviolet Photo electron Spectroscopy measurement to find the exact locations of trap levels. Five deep levels were observed in the band gap of ZrO2; these are related to different charge states of oxygen vacancies. The activation energies of these trap states are in the range of 1.16-1.84 eV from the ZrO2 conduction band. The capture cross-section of these states was also measured and found to be quite low (10-21 cm2). The small value of capture cross-sections is attributed to tunneling events occurring between the energy levels of the bulk and interface. This study would aid in the understanding of numerous fascinating facts witnessed in ZrO2, such as resistive switching, threshold voltage instabilities, and leakage current problems associated with oxygen vacancy related traps.

  18. Stabilization of the Particle-Hole Pfaffian Order by Landau-Level Mixing and Impurities That Break Particle-Hole Symmetry

    NASA Astrophysics Data System (ADS)

    Zucker, P. T.; Feldman, D. E.

    2016-08-01

    Numerical results suggest that the quantum Hall effect at ν =5 /2 is described by the Pfaffian or anti-Pfaffian state in the absence of disorder and Landau-level mixing. Those states are incompatible with the observed transport properties of GaAs heterostructures, where disorder and Landau-level mixing are strong. We show that the recent proposal of a particle-hole (PH)-Pfaffian topological order by Son is consistent with all experiments. The absence of particle-hole symmetry at ν =5 /2 is not an obstacle to the existence of the PH-Pfaffian order since the order is robust to symmetry breaking.

  19. Feasibility of Lateral Emplacement in Very Deep Borehole Disposal of High Level Nuclear Waste

    DTIC Science & Technology

    2010-06-01

    Boiling Water Reactor (BWR) assemblies. 1.3 Overview of the Deep Borehole Concept 1.3.1 Nuclear Waste Any national nuclear waste repository must be...Dept. of Nuclear Science and Engineering, September 2004. 2 “Light-Water Reactor Fuel,” Nuclear Fuel Industries, 2010, Accessed 7 May 2010 at http...Report TM- 63 Jer 010 at 1965, pg. 352. d, pg. 354. 62 Charles W. Fo System for Spent- Nuclear Fuel (SNF) and its Applicability to Lightwater Reactor

  20. DeepMap+: Recognizing High-Level Indoor Semantics Using Virtual Features and Samples Based on a Multi-Length Window Framework

    PubMed Central

    Zhang, Wei; Zhou, Siwang

    2017-01-01

    Existing indoor semantic recognition schemes are mostly capable of discovering patterns through smartphone sensing, but it is hard to recognize rich enough high-level indoor semantics for map enhancement. In this work we present DeepMap+, an automatical inference system for recognizing high-level indoor semantics using complex human activities with wrist-worn sensing. DeepMap+ is the first deep computation system using deep learning (DL) based on a multi-length window framework to enrich the data source. Furthermore, we propose novel methods of increasing virtual features and virtual samples for DeepMap+ to better discover hidden patterns of complex hand gestures. We have performed 23 high-level indoor semantics (including public facilities and functional zones) and collected wrist-worn data at a Wal-Mart supermarket. The experimental results show that our proposed methods can effectively improve the classification accuracy. PMID:28587117

  1. DeepMap+: Recognizing High-Level Indoor Semantics Using Virtual Features and Samples Based on a Multi-Length Window Framework.

    PubMed

    Zhang, Wei; Zhou, Siwang

    2017-05-26

    Existing indoor semantic recognition schemes are mostly capable of discovering patterns through smartphone sensing, but it is hard to recognize rich enough high-level indoor semantics for map enhancement. In this work we present DeepMap+, an automatical inference system for recognizing high-level indoor semantics using complex human activities with wrist-worn sensing. DeepMap+ is the first deep computation system using deep learning (DL) based on a multi-length window framework to enrich the data source. Furthermore, we propose novel methods of increasing virtual features and virtual samples for DeepMap+ to better discover hidden patterns of complex hand gestures. We have performed 23 high-level indoor semantics (including public facilities and functional zones) and collected wrist-worn data at a Wal-Mart supermarket. The experimental results show that our proposed methods can effectively improve the classification accuracy.

  2. Extrinsic germanium Blocked Impurity Bank (BIB) detectors

    NASA Technical Reports Server (NTRS)

    Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

    1989-01-01

    Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

  3. Classical impurities and boundary Majorana zero modes in quantum chains

    NASA Astrophysics Data System (ADS)

    Müller, Markus; Nersesyan, Alexander A.

    2016-09-01

    We study the response of classical impurities in quantum Ising chains. The Z2 degeneracy they entail renders the existence of two decoupled Majorana modes at zero energy, an exact property of a finite system at arbitrary values of its bulk parameters. We trace the evolution of these modes across the transition from the disordered phase to the ordered one and analyze the concomitant qualitative changes of local magnetic properties of an isolated impurity. In the disordered phase, the two ground states differ only close to the impurity, and they are related by the action of an explicitly constructed quasi-local operator. In this phase the local transverse spin susceptibility follows a Curie law. The critical response of a boundary impurity is logarithmically divergent and maps to the two-channel Kondo problem, while it saturates for critical bulk impurities, as well as in the ordered phase. The results for the Ising chain translate to the related problem of a resonant level coupled to a 1d p-wave superconductor or a Peierls chain, whereby the magnetic order is mapped to topological order. We find that the topological phase always exhibits a continuous impurity response to local fields as a result of the level repulsion of local levels from the boundary Majorana zero mode. In contrast, the disordered phase generically features a discontinuous magnetization or charging response. This difference constitutes a general thermodynamic fingerprint of topological order in phases with a bulk gap.

  4. Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Kawahara, Koutarou; Suda, Jun; Pensl, Gerhard; Kimoto, Tsunenobu

    2010-08-01

    The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of the band gap of 4H-SiC by deep level transient spectroscopy. The deep levels are generated by ion implantation. The dominant defects in n-type samples after ion implantation and high-temperature annealing at 1700 °C are IN3 (Z1/2: EC-0.63 eV) and IN9 (EH6/7: EC-1.5 eV) in low-dose-implanted samples, and IN8 (EC-1.2 eV) in high-dose-implanted samples. These defects can remarkably be reduced by thermal oxidation at 1150 °C. In p-type samples, however, IP8 (HK4: EV+1.4 eV) survives and additional defects such as IP4 (HK0: EV+0.72 eV) appear after thermal oxidation in low-dose-implanted samples. In high-dose-implanted p-type samples, three dominant levels, IP5 (HK2: EV+0.85 eV), IP6 (EV+1.0 eV), and IP7 (HK3: EV+1.3 eV), are remarkably reduced by oxidation at 1150 °C. The dominant defect IP4 observed in p-type 4H-SiC after thermal oxidation can be reduced by subsequent annealing in Ar at 1400 °C. These phenomena are explained by a model that excess interstitials are generated at the oxidizing interface, which diffuse into the bulk region.

  5. Exploring the Deep-Level Reasoning Questions Effect during Vicarious Learning among Eighth to Eleventh Graders in the Domains of Computer Literacy and Newtonian Physics

    ERIC Educational Resources Information Center

    Gholson, Barry; Witherspoon, Amy; Morgan, Brent; Brittingham, Joshua K.; Coles, Robert; Graesser, Arthur C.; Sullins, Jeremiah; Craig, Scotty D.

    2009-01-01

    This paper tested the deep-level reasoning questions effect in the domains of computer literacy between eighth and tenth graders and Newtonian physics for ninth and eleventh graders. This effect claims that learning is facilitated when the materials are organized around questions that invite deep-reasoning. The literature indicates that vicarious…

  6. Exploring the Deep-Level Reasoning Questions Effect during Vicarious Learning among Eighth to Eleventh Graders in the Domains of Computer Literacy and Newtonian Physics

    ERIC Educational Resources Information Center

    Gholson, Barry; Witherspoon, Amy; Morgan, Brent; Brittingham, Joshua K.; Coles, Robert; Graesser, Arthur C.; Sullins, Jeremiah; Craig, Scotty D.

    2009-01-01

    This paper tested the deep-level reasoning questions effect in the domains of computer literacy between eighth and tenth graders and Newtonian physics for ninth and eleventh graders. This effect claims that learning is facilitated when the materials are organized around questions that invite deep-reasoning. The literature indicates that vicarious…

  7. Quantum interference on electron scattering in graphene by carbon impurities in underlying h -BN

    NASA Astrophysics Data System (ADS)

    Kaneko, Tomoaki; Koshino, Mikito; Saito, Riichiro

    2017-03-01

    Electronic structures and transport properties of graphene on h -BN with carbon impurities are investigated by first-principles calculation and the tight-binding model. We show that the coupling between the impurity level and the graphene's Dirac cone sensitively depends on the impurity position, and in particular, it nearly vanishes when the impurity is located right below the center of the six membered ring of graphene. The Bloch phase factor at the Brillouin zone edge plays a decisive role in the cancellation of the hopping integrals. The impurity position dependence on the electronic structures of graphene on h -BN is investigated by the first-principles calculation, and its qualitative feature is well explained by a tight-binding model with graphene and a single impurity site. We also propose a simple one-dimensional chain-impurity model to analytically describe the role of the quantum interference in the position-dependent coupling.

  8. Reactive impurities in excipients: profiling, identification and mitigation of drug-excipient incompatibility.

    PubMed

    Wu, Yongmei; Levons, Jaquan; Narang, Ajit S; Raghavan, Krishnaswamy; Rao, Venkatramana M

    2011-12-01

    Reactive impurities in pharmaceutical excipients could cause drug product instability, leading to decreased product performance, loss in potency, and/or formation of potentially toxic degradants. The levels of reactive impurities in excipients may vary between lots and vendors. Screening of excipients for these impurities and a thorough understanding of their potential interaction with drug candidates during early formulation development ensure robust drug product development. In this review paper, excipient impurities are categorized into six major classes, including reducing sugars, aldehydes, peroxides, metals, nitrate/nitrite, and organic acids. The sources of generation, the analytical method for detection, the stability of impurities upon storage and processing, and the potential reactions with drug candidates of these impurities are reviewed. Specific examples of drug-excipient impurity interaction from internal research and literature are provided. Mitigation strategies and corrective measures are also discussed.

  9. Stretching and deep and superficial massage do not influence blood lactate levels after heavy-intensity cycle exercise.

    PubMed

    Cè, Emiliano; Limonta, Eloisa; Maggioni, Martina A; Rampichini, Susanna; Veicsteinas, Arsenio; Esposito, Fabio

    2013-01-01

    The study aimed to assess the role of deep and superficial massage and passive stretching recovery on blood lactate concentration ([La(-)]) kinetics after a fatiguing exercise compared to active and passive recovery. Nine participants (age 23 ± 1 years; stature 1.76 ± 0.02 m; body mass 74 ± 4 kg) performed on five occasions an 8-min fatiguing exercise at 90% of maximum oxygen uptake, followed by five different 10-min interventions in random order: passive and active recovery, deep and superficial massage and stretching. Interventions were followed by 1 hour of recovery. Throughout each session, maximum voluntary contraction (MVC) of the knee extensor muscles, [La(-)], cardiorespiratory and metabolic variables were determined. Electromyographic signal (EMG) from the quadriceps muscles was also recorded. At the end of the fatiguing exercise, [La(-)], MVC, EMG amplitude, and metabolic and cardiorespiratory parameters were similar among conditions. During intervention administration, [La(-)] was lower and metabolic and cardiorespiratory parameters were higher in active recovery compared to the other modalities (P < 0.05). Stretching and deep and superficial massage did not alter [La(-)] kinetics compared to passive recovery. These findings indicate that the pressure exerted during massage administration and stretching manoeuvres did not play a significant role on post-exercise blood La(-) levels.

  10. DeepEM3D: approaching human-level performance on 3D anisotropic EM image segmentation.

    PubMed

    Zeng, Tao; Wu, Bian; Ji, Shuiwang

    2017-08-15

    Progress in 3D electron microscopy (EM) imaging has greatly facilitated neuroscience research in high-throughput data acquisition. Correspondingly, high-throughput automated image analysis methods are necessary to work on par with the speed of data being produced. One such example is the need for automated EM image segmentation for neurite reconstruction. However, the efficiency and reliability of current methods are still lagging far behind human performance. Here, we propose DeepEM3D, a deep learning method for segmenting 3D anisotropic brain electron microscopy images. In this method, the deep learning model can efficiently build feature representation and incorporate sufficient multi-scale contextual information. We propose employing a combination of novel boundary map generation methods with optimized model ensembles to address the inherent challenges of segmenting anisotropic images. We evaluated our method by participating in the 3D segmentation of neurites in EM images (SNEMI3D) challenge. Our submission is ranked #1 on the current leaderboard as of Oct 15, 2016. More importantly, our result was very close to human-level performance in terms of the challenge evaluation metric: namely, a Rand error of 0.06015 versus the human value of 0.05998. The code is available at https://github.com/divelab/deepem3d/. sji@eecs.wsu.edu. Supplementary data are available at Bioinformatics online.

  11. Interaction of copper impurity with radiation defects in silicon doped with boron

    SciTech Connect

    Yarykin, N. A.; Weber, J.

    2010-08-15

    The spectrum of deep levels formed in boron-doped Czochralski-grown silicon single crystals as a result of interaction of radiation defects with copper impurity is studied. It is shown that, irrespective of the order of introduction of defects (both in the case of low-temperature copper diffusion into crystals preliminarily irradiated with electrons and in the case of irradiation of the samples contaminated with copper), the same set of deep levels appears. In addition to conventional radiation defects, three types of levels have been detected in the band gap of copper-containing crystals. These levels include the level E{sub v} + 0.49 eV (already mentioned in available publications), the level E{sub v} + 0.51 eV (previously not related to copper), and a level close to the donor level of a vacancy. Based on the analysis of concentration profiles, the interstitial carbonoxygen pair is excluded from possible precursors of the copper-containing center with level E{sub v} + 0.49 eV.

  12. Multiregion ultra-deep sequencing reveals early intermixing and variable levels of intratumoral heterogeneity in colorectal cancer.

    PubMed

    Suzuki, Yuka; Ng, Sarah Boonhsi; Chua, Clarinda; Leow, Wei Qiang; Chng, Jermain; Liu, Shi Yang; Ramnarayanan, Kalpana; Gan, Anna; Ho, Dan Liang; Ten, Rachel; Su, Yan; Lezhava, Alexandar; Lai, Jiunn Herng; Koh, Dennis; Lim, Kiat Hon; Tan, Patrick; Rozen, Steven G; Tan, Iain Beehuat

    2017-02-01

    Intratumor heterogeneity (ITH) contributes to cancer progression and chemoresistance. We sought to comprehensively describe ITH of somatic mutations, copy number, and transcriptomic alterations involving clinically and biologically relevant gene pathways in colorectal cancer (CRC). We performed multiregion, high-depth (384× on average) sequencing of 799 cancer-associated genes in 24 spatially separated primary tumor and nonmalignant tissues from four treatment-naïve CRC patients. We then used ultra-deep sequencing (17 075× on average) to accurately verify the presence or absence of identified somatic mutations in each sector. We also digitally measured gene expression and copy number alterations using NanoString assays. We identified the subclonal point mutations and determined the mutational timing and phylogenetic relationships among spatially separated sectors of each tumor. Truncal mutations, those shared by all sectors in the tumor, affected the well-described driver genes such as APC, TP53, and KRAS. With sequencing at 17 075×, we found that mutations first detected at a sequencing depth of 384× were in fact more widely shared among sectors than originally assessed. Interestingly, ultra-deep sequencing also revealed some mutations that were present in all spatially dispersed sectors, but at subclonal levels. Ultra-high-depth validation sequencing, copy number analysis, and gene expression profiling provided a comprehensive and accurate genomic landscape of spatial heterogeneity in CRC. Ultra-deep sequencing allowed more sensitive detection of somatic mutations and a more accurate assessment of ITH. By detecting the subclonal mutations with ultra-deep sequencing, we traced the genomic histories of each tumor and the relative timing of mutational events. We found evidence of early mixing, in which the subclonal ancestral mutations intermixed across the sectors before the acquisition of subsequent nontruncal mutations. Our findings also indicate that

  13. Deep level transient spectroscopy studies of n-type ZnO single crystals grown by different techniques.

    PubMed

    Scheffler, L; Kolkovsky, Vl; Lavrov, E V; Weber, J

    2011-08-24

    In the present study single-crystalline ZnO samples grown from the vapor phase, the melt, and a high-temperature aqueous solution (hydrothermal growth) are investigated before and after hydrogen plasma treatments, by means of deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. Dominant DLTS peaks are found to appear in the range of 120-350 K for all materials. The DLTS spectra depend on the procedure of growth of the ZnO. The thermal stabilities of the defects in an oxygen atmosphere and in an oxygen-lean atmosphere are analyzed. The origin of the DLTS peaks is discussed.

  14. Evaluation of hydraulic characteristics of a deep artesian aquifer from natural water-level fluctuations, Miami, Florida

    USGS Publications Warehouse

    Meyer, Frederick W.

    1974-01-01

    Knowledge of tho hydraulic characteristics of aquifer systems is fundamental to defining the vertical and horizontal controls on fluid movement, information which is needed for assessing the environmental impact of subsurface waste storage. To meet this objective, natural water-level fluctuations in the 2,947-foot deep Peninsula Utilities disposal well near Miami, Florida were analyzed to obtain estimates of the hydraulic diffusivity, hydraulic conductivity, specific storage, transmissivity, and the storage coefficient of the Boulder Zone. The fluctuations are caused chiefly by oceanic and earth tides, and by changes in atmospheric pressure. The oceanic tidal fluctuations probably result from loading due to tides in Biscayne Bay.

  15. On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAs

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    A practical procedure for the evaluation of the Fermi energy in semi-insulating (SI)GaAs from electrical measurements is presented. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near-infrared absorption measurements, to SIGaAs. Employing this procedure, it is shown that the EL2 concentration in Czochralski-grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p-type crystals) rather than abruptly as previously proposed.

  16. Deep electronic levels in high-pressure Bridgman Cd{sub 1-x}Zn{sub x}Te

    SciTech Connect

    Szeles, C.; Shan, Y.Y.; Lynn, K.G.; Eissler, E.E.

    1995-12-01

    The behavior of deep electronic levels was studied as a function of Zn concentration in CdZnTe crystals grown by the high-pressure Bridgman technique using thermoelectric effect spectroscopy. A significant increase of the thermal ionization energies of hole traps was observed with the increasing Zn content of the ternary compound. The effect explains the stronger hole trapping and the resulting much shorter hole lifetime usually observed in CdZnTe as compared to CdTe. The behavior also suggests increased carrier recombination and explains the strong deterioration of electron collection in detectors fabricated from CdZnTe of high Zn concentration.

  17. Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Li, S. S.

    1981-01-01

    Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

  18. Analysis of radiation damaged and annealed gallium arsenide and indium phosphide solar cells using deep level transient spectroscopy. Master's thesis

    SciTech Connect

    Bruening, J.A.

    1993-09-01

    Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1[times]10[sup 16] electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the InP solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs.

  19. Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

    SciTech Connect

    Meneghini, M. La Grassa, M.; Vaccari, S.; Meneghesso, G.; Zanoni, E.

    2014-03-17

    This paper presents an extensive investigation of the deep levels related to non-radiative recombination in InGaN/GaN light-emitting diodes (LEDs). The study is based on combined optical and deep-level transient spectroscopy measurements, carried out on LEDs with identical structure and with different values of the non-radiative recombination coefficient. Experimental data lead to the following, relevant, results: (i) LEDs with a high non-radiative recombination coefficient have a higher concentration of a trap (labeled as “e{sub 2}”) with an activation energy of 0.7 eV, which is supposed to be located close to/within the active region; (ii) measurements carried out with varying filling pulse duration suggest that this deep level behaves as a point-defect/dislocation complex. The Arrhenius plot of this deep level is critically compared with the previous literature reports, to identify its physical origin.

  20. Resolving the EH{sub 6/7} level in 4H-SiC by Laplace-transform deep level transient spectroscopy

    SciTech Connect

    Alfieri, G.; Kimoto, T.

    2013-04-15

    We show that Laplace transform deep level transient spectroscopy (LDLTS) is an effective technique for the separation of the overlapping emission rates of the EH{sub 6} and EH{sub 7} levels, which are known to constitute EH{sub 6/7}, a mid-gap level in n-type 4H-SiC. The analysis of the electron irradiation dose, electric field dependence, and the effects of carbon interstitials injection on the emission rates of EH{sub 6} and EH{sub 7} shows that EH{sub 7} is dominant over EH{sub 6} and confirms that their nature is related to a carbon vacancy.

  1. Impurity bubbles in a BEC

    NASA Astrophysics Data System (ADS)

    Timmermans, Eddy; Blinova, Alina; Boshier, Malcolm

    2013-05-01

    Polarons (particles that interact with the self-consistent deformation of the host medium that contains them) self-localize when strongly coupled. Dilute Bose-Einstein condensates (BECs) doped with neutral distinguishable atoms (impurities) and armed with a Feshbach-tuned impurity-boson interaction provide a unique laboratory to study self-localized polarons. In nature, self-localized polarons come in two flavors that exhibit qualitatively different behavior: In lattice systems, the deformation is slight and the particle is accompanied by a cloud of collective excitations as in the case of the Landau-Pekar polarons of electrons in a dielectric lattice. In natural fluids and gases, the strongly coupled particle radically alters the medium, e.g. by expelling the host medium as in the case of the electron bubbles in superfluid helium. We show that BEC-impurities can self-localize in a bubble, as well as in a Landau-Pekar polaron state. The BEC-impurity system is fully characterized by only two dimensionless coupling constants. In the corresponding phase diagram the bubble and Landau-Pekar polaron limits correspond to large islands separated by a cross-over region. The same BEC-impurity species can be adiabatically Feshbach steered from the Landau-Pekar to the bubble regime. This work was funded by the Los Alamos LDRD program.

  2. Late Pleistocene Sea level on the New Jersey Margin: Implications to eustasy and deep-sea temperature

    USGS Publications Warehouse

    Wright, J.D.; Sheridan, R.E.; Miller, K.G.; Uptegrove, J.; Cramer, B.S.; Browning, J.V.

    2009-01-01

    We assembled and dated a late Pleistocene sea-level record based on sequence stratigraphy from the New Jersey margin and compared it with published records from fossil uplifted coral reefs in New Guinea, Barbados, and Araki Island, as well as a composite sea-level estimate from scaling of Red Sea isotopic values. Radiocarbon dates, amino acid racemization data, and superposition constrain the ages of large (20-80??m) sea-level falls from New Jersey that correlate with Marine Isotope Chrons (MIC) 2, 3b, 4, 5b, and 6 (the past 130??kyr). The sea-level records for MIC 1, 2, 4, 5e, and 6 are similar to those reported from New Guinea, Barbados, Araki, and the Red Sea; some differences exist among records for MIC 3. Our record consistently provides the shallowest sea level estimates for MIC3 (??? 25-60??m below present); it agrees most closely with the New Guinea record of Chappell (2002; ??? 35-70??m), but contrasts with deeper estimates provided by Araki (??? 85-95??m) and the Red Sea (50-90??m). Comparison of eustatic estimates with benthic foraminiferal ??18O records shows that the deep sea cooled ??? 2.5????C between MIC 5e and 5d (??? 120-110??ka) and that near freezing conditions persisted until Termination 1a (14-15??ka). Sea-level variations between MIC 5b and 2 (ca. 90-20??ka) follow a well-accepted 0.1???/10??m linear variation predicted by ice-growth effects on foraminiferal ??18O values. The pattern of deep-sea cooling follows a previously established hysteresis loop between two stable modes of operation. Cold, near freezing deep-water conditions characterize most of the past 130??kyr punctuated only by two warm intervals (the Holocene/MIC 1 and MIC 5e). We link these variations to changes in Northern Component Water (NCW). ?? 2009 Elsevier B.V. All rights reserved.

  3. Development of benthic biological monitoring criteria for disposal of low-level radioactive waste in the abyssal deep sea. Final report

    SciTech Connect

    Smith, C.R.; Present, T.M.C.; Jumars, P.A.

    1988-09-01

    In order to develop recommendations for monitoring low-level radioactive waste dumpsites in the abyss, the report attempts a synthesis of information from three overlapping topical areas. First, U.S. Regulations governing the dumping and monitoring of wastes in the ocean are interpreted in a deep-sea context. Second, significant attention is given to experiences obtained from past dumping of low-level radioactive wastes in marine environments, both shallow-water and deep-sea. Third, the report attempts to apply the monitoring Requirements and conceptual approaches selected to the abyssal seafloor, based on present understandings of the deep-sea ecosystem.

  4. Mapping vaccinia virus DNA replication origins at nucleotide level by deep sequencing.

    PubMed

    Senkevich, Tatiana G; Bruno, Daniel; Martens, Craig; Porcella, Stephen F; Wolf, Yuri I; Moss, Bernard

    2015-09-01

    Poxviruses reproduce in the host cytoplasm and encode most or all of the enzymes and factors needed for expression and synthesis of their double-stranded DNA genomes. Nevertheless, the mode of poxvirus DNA replication and the nature and location of the replication origins remain unknown. A current but unsubstantiated model posits only leading strand synthesis starting at a nick near one covalently closed end of the genome and continuing around the other end to generate a concatemer that is subsequently resolved into unit genomes. The existence of specific origins has been questioned because any plasmid can replicate in cells infected by vaccinia virus (VACV), the prototype poxvirus. We applied directional deep sequencing of short single-stranded DNA fragments enriched for RNA-primed nascent strands isolated from the cytoplasm of VACV-infected cells to pinpoint replication origins. The origins were identified as the switching points of the fragment directions, which correspond to the transition from continuous to discontinuous DNA synthesis. Origins containing a prominent initiation point mapped to a sequence within the hairpin loop at one end of the VACV genome and to the same sequence within the concatemeric junction of replication intermediates. These findings support a model for poxvirus genome replication that involves leading and lagging strand synthesis and is consistent with the requirements for primase and ligase activities as well as earlier electron microscopic and biochemical studies implicating a replication origin at the end of the VACV genome.

  5. Community metabolism in a deep (stratified) tropical reservoir during a period of high water-level fluctuations.

    PubMed

    Valdespino-Castillo, Patricia M; Merino-Ibarra, Martín; Jiménez-Contreras, Jorge; Castillo-Sandoval, Fermín S; Ramírez-Zierold, Jorge A

    2014-10-01

    As long as lakes and reservoirs are an important component of the global carbon cycle, monitoring of their metabolism is required, especially in the tropics. In particular, the response of deep reservoirs to water-level fluctuations (WLF) is an understudied field. Here, we study community metabolism through oxygen dynamics in a deep monomictic reservoir where high WLF (~10 m) have recently occurred. Simultaneous monitoring of environmental variables and zooplankton dynamics was used to assess the effects of WLF on the metabolism of the eutrophic Valle de Bravo (VB) reservoir, where cyanobacteria blooms are frequent. Mean gross primary production (P g) was high (2.2 g C m(-2) day(-1)), but temporal variation of P g was low except for a drastic reduction during circulation attributed to zooplankton grazing. The trophogenic layer showed net autotrophy on an annual basis, but turned to net heterotrophy during mixing, and furthermore when the whole water-column oxygen balance was calculated, considering the aphotic respiration (Raphotic). The high total respiration resulting (3.1 g C m(-2) day(-1)) is considered to be partly due to mixing enhanced by WLF. Net ecosystem production was equivalent to a net export of 3.4 mg CO₂ m(-2) day(-1) to the atmosphere. Low water levels are posed to intensify boundary-mixing events driven by the wind during the stratification in VB. Long-term monitoring showed changes in the planktonic community and a strong silicon decrease that matched with low water-level periods. The effects of low water-level on metabolism and planktonic community in VB suggest that water-level manipulation could be a useful management tool to promote phytoplankton groups other than cyanobacteria.

  6. Effect of carrier capture by deep levels on lateral photoconductivity of InGaAs/GaAs quantum dot structures

    NASA Astrophysics Data System (ADS)

    Vakulenko, O. V.; Golovynskyi, S. L.; Kondratenko, S. V.

    2011-08-01

    Having used thermally stimulated conductivity (TSC) technique, we identified deep electron traps that produce strong effects on charge carrier transport and photoconductivity in InGaAs/GaAs quantum dot (QD) structures. The values of deep levels below the conduction band of GaAs at 0.16, 0.22, and 0.35 eV are obtained from the analysis of the shapes of TSC curves after the excitation with the quanta energy hv = 0.9, 1.2, and 1.6 eV. The level 0.16 eV in depth is an effective electron trap that provides crossing of lateral conductivity with a high-resistance mode and, therefore, causes a high photocurrent sensitivity of about 3 A/W at 77 K with excitation by interband transitions in QDs. We determined the charge density of electrons captured by the (Ec - 0.16 eV) level to be 2 × 10-6 C/cm2 at 77 K that induces electric field ˜ 105 V/cm in a vicinity of QDs. The state at Ec - 0.22 eV is shown to be related to the recombination center that can hold non-equilibrium holes over a long time under the condition that the non-equilibrium holes are localized by the quantum states of QDs. In the course of long-term electron storage in a vicinity of QDs, an electron trapped at the (Ec - 0.16) eV level can be recaptured by a deeper spatially remote (Ec - 0.22 eV) level that allows the TSC peak observation at 106 K.

  7. Investigation of deep levels and precipitates related to molybdenum in silicon by DLTS and scanning infrared microscopy

    NASA Astrophysics Data System (ADS)

    Sandhu, A.; Ogikubo, T.; Goto, H.; Csapo, V.; Pavelka, T.

    2000-03-01

    We report on the properties of Si diffused with molybdenum (Mo) investigated using experimental techniques that included Fourier transform deep-level transient spectroscopy (FT-DLTS) and scanning infrared microscopy (SIRM). Samples were prepared using boron-doped float zone (1 0 0)Si wafers (100-400 Ω cm) and Mo was diffused into them by placing Mo powder onto the Si surface and annealing in a vacuum (8×10 -6 Torr) at temperatures between 400 and 800°C for 1-10 h. FT-DLTS measurements revealed that deep levels due to Mo ( Ev+0.29 eV) were only formed in samples when Mo was diffused above a threshold temperature of 650°C. SIRM imaging showed the presence of Mo-related precipitates having a density of 2.3×10 7-5.8×10 9 cm -3 near the surface region and iron-related precipitates having a density of 1.2×10 7-1.1×10 8 at a depth of 30 μm. The precipitate size was found to be strongly dependent on diffusion temperature and ranged between 50 and 100 nm as calculated from the scattered light intensity. The minority carrier lifetime was found to decrease with increasing density of iron traps that were unintentionally incorporated during the diffusion process.

  8. Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons

    SciTech Connect

    Danno, Katsunori; Kimoto, Tsunenobu

    2006-12-01

    Deep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS). The Z{sub 1/2} and EH{sub 6/7} centers are dominant in as-grown samples. After electron irradiation at 116 keV, by which only carbon atoms may be displaced, the Z{sub 1/2} and EH{sub 6/7} concentrations are significantly increased. The Z{sub 1/2} and EH{sub 6/7} centers are stable up to 1500-1600 deg. C and their concentrations are decreased by annealing at 1600-1700 deg. C. In the irradiated samples, the trap concentrations of the Z{sub 1/2} and EH{sub 6/7} centers are increased with the 0.7 power of the electron fluence. The concentrations of the Z{sub 1/2} and EH{sub 6/7} centers are very close to each other in all kinds of samples, as-grown, as-irradiated, and annealed ones, even though the condition of growth, irradiation (energy and fluence), and annealing has been changed. This result suggests that both Z{sub 1/2} and EH{sub 6/7} centers microscopically contain the same defect such as a carbon vacancy.

  9. Decomposition of groundwater level fluctuations using transfer modelling in an area with shallow to deep unsaturated zones

    NASA Astrophysics Data System (ADS)

    Gehrels, J. C.; van Geer, F. C.; de Vries, J. J.

    1994-05-01

    Time series analysis of the fluctuations in shallow groundwater levels in the Netherlands lowlands have revealed a large-scale decline in head during recent decades as a result of an increase in land drainage and groundwater withdrawal. The situation is more ambiguous in large groundwater bodies located in the eastern part of the country, where the unsaturated zone increases from near zero along the edges to about 40 m in the centre of the area. As depth of the unsaturated zone increases, groundwater level reacts with an increasing delay to fluctuations in climate and influences of human activities. The aim of the present paper is to model groundwater level fluctuations in these areas using a linear stochastic transfer function model, relating groundwater levels to estimated precipitation excess, and to separate artificial components from the natural groundwater regime. In this way, the impact of groundwater withdrawal and the reclamation of a 1000 km 2 polder area on the groundwater levels in the adjoining higher ground could be assessed. It became evident that the linearity assumption of the transfer functions becomes a serious drawback in areas with the deepest groundwater levels, because of non-linear processes in the deep unsaturated zone and the non-synchronous arrival of recharge in the saturated zone. Comparison of the results from modelling the influence of reclamation with an analytical solution showed that the lowering of groundwater level is partly compensated by reduced discharge and therefore is less than expected.

  10. The effects of titanium impurities in N/+//P silicon solar cells

    NASA Technical Reports Server (NTRS)

    Salama, A. M.; Cheng, L. J.

    1980-01-01

    Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

  11. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N

    SciTech Connect

    Armstrong, Andrew M. Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

    2015-05-14

    The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al{sub 0.7}Ga{sub 0.3}N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al{sub 0.7}Ga{sub 0.3}N.

  12. Deep electronic levels at growth interrupted interfaces in low-temperature-grown GaAs and the pressure dependence of these levels

    SciTech Connect

    Samara, G.A. ); Vook, D.W.; Gibbons, J.F. )

    1992-02-15

    Deep electronic energy levels associated with defects confined to interrupted growth interfaces of thin GaAs layers grown by low-temperature (720 K) metalorganic chemical vapor deposition using tertiarybutylarsine and subsequently annealed at 920 K for about 2 min were investigated by transient capacitance spectroscopy at both atmospheric pressure (1 bar) and hydrostatic pressures to 8 kbar. Samples grown under widely different As/Ga ratios in the gas phase were compared, and this ratio was found to have a strong influence on the levels observed. Most of these levels are characteristic of levels seen in GaAs grown from the vapor phase. Analysis of the pressure dependencies of the electron emission rates and capture cross sections shows that most of the levels move higher in energy with pressure and yields the activation volume which accompanies electron emission or capture. These features are unique signatures of the levels and provide new insights into the physics involved. One of the levels is identified as the midgap donor EL2. Its energy exhibits a relatively large increase with pressure, and a large inward (outward) volume relaxation accompanies electron emission (capture) of electrons from (by) it.

  13. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    SciTech Connect

    Islam, Muhammad Monirul Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka; Sakurai, Takeaki; Akimoto, Katsuhiro

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  14. Deep uncertainty about the modes and tails of sea-level projections

    NASA Astrophysics Data System (ADS)

    Ruckert, Kelsey; Guan, Yawen; Forest, Chris; Keller, Klaus

    2015-04-01

    Sea-levels are generally rising around the world, posing nontrivial risks. Managing these risks hinges on sea-level rise projections and their associated uncertainties. Deriving sea-level projections presents nontrivial methodological challenges. Previous studies projecting sea-level rise have broken new ground, but typically adopt a single calibration method. Here we use a simple sea-level rise model to analyze and quantify the structural uncertainties driven by the choice of calibration method. In particular, we analyze a frequentist bootstrap method and a Bayesian approach (one with and one without the consideration of heteroskedastic errors). We show that the Bayesian approach with a heteroskedastic likelihood function performs best in hindcast experiments with respect to producing credible intervals with appropriate coverage. The choice of calibration method has considerable impacts on the modes and tails of the projections. Specifically, the modes vary across methods by more than 0.5 meters, in the year 2100. Arguably more important, the projected sea-levels with 1 in 100 and 1 in 10,000 exceedance probabilities vary by 2.5 and 3.5 meters. This structural uncertainty introduced by the choice of the statistical method has considerable implications for the design of sea-level rise adaptation strategies.

  15. ALUMINUM IMPURITY DIFFUSION IN MAGNESIUM

    SciTech Connect

    Brennan, Sarah; Warren, Andrew; Coffey, Kevin; Kulkarni, Nagraj S; Todd, Peter J; Sohn, Yong Ho; Klimov, Mikhail

    2012-01-01

    The Al impurity diffusion in polycrystalline Mg (99.9%) via depth profiling with secondary ion mass spectrometry was studied in the temperature range of 673-573K, utilizing the thin film method and thin film solution to the diffusion equation. Multiple samples were utilized and multiple profiles were obtained to determine statistically confident coefficient with maximum standard deviation of 16%. Activation energy and pre-exponential factor of Al impurity diffusion in Mg was determined as 155 kJ/mole and 3.9 x 10-3 m2/sec.

  16. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  17. EFFECT OF FUEL IMPURITIES ON FUEL CELL PERFORMANCE AND DURABILITY

    SciTech Connect

    Colon-Mercado, H.

    2010-09-28

    A fuel cell is an electrochemical energy conversion device that produces electricity during the combination of hydrogen and oxygen to produce water. Proton exchange membranes fuel cells are favored for portable applications as well as stationary ones due to their high power density, low operating temperature, and low corrosion of components. In real life operation, the use of pure fuel and oxidant gases results in an impractical system. A more realistic and cost efficient approach is the use of air as an oxidant gas and hydrogen from hydrogen carriers (i.e., ammonia, hydrocarbons, hydrides). However, trace impurities arising from different hydrogen sources and production increases the degradation of the fuel cell. These impurities include carbon monoxide, ammonia, sulfur, hydrocarbons, and halogen compounds. The International Organization for Standardization (ISO) has set maximum limits for trace impurities in the hydrogen stream; however fuel cell data is needed to validate the assumption that at those levels the impurities will cause no degradation. This report summarizes the effect of selected contaminants tested at SRNL at ISO levels. Runs at ISO proposed concentration levels show that model hydrocarbon compound such as tetrahydrofuran can cause serious degradation. However, the degradation is only temporary as when the impurity is removed from the hydrogen stream the performance completely recovers. Other molecules at the ISO concentration levels such as ammonia don't show effects on the fuel cell performance. On the other hand carbon monoxide and perchloroethylene shows major degradation and the system can only be recovered by following recovery procedures.

  18. Extended recursion in operator space (EROS), a new impurity solver for the single impurity Anderson model

    SciTech Connect

    Albers, Robert C; Julien, Jean P

    2008-01-01

    We have developed a new efficient and accurate impurity solver for the single impurity Anderson model (SIAM), which is based on a non-perturbative recursion technique in a space of operators and involves expanding the self-energy as a continued fraction. The method has no special occupation number or temperature restrictions; the only approximation is the number of levels of the continued fraction retained in the expansion. We also show how this approach can be used as a new approach to Dynamical Mean Field Theory (DMTF) and illustrate this with the Hubbard model. The three lowest orders of recursion give the Hartree-Fock, Hubbard I, and Hubbard III approximations. A higher level of recursion is able to reproduce the expected 3-peak structure in the spectral function and Fermi liquid behavior.

  19. Forced diffusion of impurities in natural diamond and polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Popovici, Galina; Sung, T.; Khasawinah, S.; Prelas, M. A.; Wilson, R. G.

    1995-06-01

    A method is proposed for the determination of the state of an impurity (donor, acceptor, or deep level) in semiconductor lattice. To demonstrate the method boron was diffused into type Ia natural diamond under a dc electric field. The concentration and diffusion profiles of boron were affected by the applied field. Boron diffuses as a negative ion since it is an acceptor shallow enough to be partially ionized at the temperature of diffusion. The drift velocity of boron ions at the temperature of diffusion was also estimated. The diffusion of lithium and oxygen from a Li2CO3 source in chemical vapor deposited diamond films was performed under bias at 1000 °C in an argon atmosphere. After diffusion, the concentrations of Li, O, and H in the diamond films were found to be around (3-4)×1019 cm-3. No dependence of these concentrations on the applied bias was observed. It was found that the diffusion of Li goes primarily through grain boundaries, which may explain why it does not depend on the applied voltage. Fluorine was present as an impurity in the dopant source. Its concentration in the films was around (1-2)×1017 cm-3 and did depend on the applied bias, indicating that fluorine may have formed a shallow level in the diamond band gap.

  20. Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

    NASA Astrophysics Data System (ADS)

    Qing, Zhu; Xiao-Hua, Ma; Wei-Wei, Chen; Bin, Hou; Jie-Jie, Zhu; Meng, Zhang; Li-Xiang, Chen; Yan-Rong, Cao; Yue, Hao

    2016-06-01

    Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c - 0.56 eV are located in the channel, those with E c - 0.33 eV and E c - 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant Nos. 61334002 and 61404097).

  1. Deep brain stimulation of the nucleus accumbens shell increases impulsive behavior and tissue levels of dopamine and serotonin.

    PubMed

    Sesia, Thibaut; Bulthuis, Vincent; Tan, Sonny; Lim, Lee Wei; Vlamings, Rinske; Blokland, Arjan; Steinbusch, Harry W M; Sharp, Trevor; Visser-Vandewalle, Veerle; Temel, Yasin

    2010-10-01

    The nucleus accumbens (NAc) is gaining interest as a target for deep brain stimulation (DBS) in refractory neuropsychiatric disorders with impulsivity as core symptom. The nucleus accumbens is composed of two subterritories, core and shell, which have different anatomical connections. In animal models, it has been shown that DBS of the NAc changes impulsive action. Here, we tested the hypothesis that a change in impulsive action by DBS of the NAc is associated with changes in dopamine levels. Rats received stimulating electrodes either in the NAc core or shell, and underwent behavioral testing in a reaction time task. In addition, in a second experiment, the effect of DBS of the NAc core and shell on extracellular dopamine and serotonin levels was assessed in the NAc and medial prefrontal cortex. Control subjects received sham surgery. We have found that DBS of the NAc shell stimulation induced more impulsive action but less perseverative checking. These effects were associated with increased levels of dopamine and serotonin in the NAc, but not in the medial prefrontal cortex. DBS of the NAc core had no effect on impulsive action, but decreased perseverative responses indicative of a better impulse control. In these subjects, no effects were found on neurotransmitter levels. Our data point out that DBS of the NAc shell has negative effects on impulsive action which is accompanied by increases of dopamine and serotonin levels in the NAc, whereas DBS of the NAc core has beneficial behavioral effects.

  2. Deep level defects in 4H-SiC introduced by ion implantation: The role of single ion regime.

    PubMed

    Pastuovic, Zeljko; Capan, Ivana; Sato, Shin-Ichiro; Ohshima, Takeshi; Brodar, Tomislav; Siegele, Rainer

    2017-10-03

    We characterized intrinsic deep level defects created in ion collision cascades which were produced by patterned implantation of single accelerated 2.0 MeV He and 600 keV H ions into n-type 4H-SiC epitaxial layers using a fast-scanning reduced-rate ion microbeam. The initial Deep Level Transient Spectroscopy measurement performed on as-grown material in the temperature range 150-700 K revealed the presence of only two electron traps, Z1/2 (0.64 eV) and EH6/7 (1.84 eV) assigned to the two different charge state transitions of the isolated carbon vacancy, VC (=/0) and (0/+). C-V measurements of as-implanted samples revealed the increasing free carrier removal with larger ion fluence values, in particular at depth corresponding to a vicinity of the end of an ion range. The first DLTS measurement of as-implanted samples revealed formation of additional deep level defects labelled as ET1 (0.35 eV), ET2 (0.65 eV) and EH3 (1.06 eV) which were clearly distinguished from the presence of isolated carbon vacancies (Z1/2 and EH6/7 defects) in increased concentrations after implantations either by He or H ions. Repeated C-V measurements showed that a partial net free-carrier recovery occurred in as-implanted samples upon the low-temperature annealing following the first DLTS measurement. The second DLTS measurement revealed the almost complete removal of ET2 defect and the partial removal of EH3 defect, while the concentrations of Z1/2 and EH6/7 defects increased, due to the low temperature annealing up to 700 K accomplished during the first temperature scan. We concluded that the ET2 and EH3 defects: i) act as majority carrier removal traps, ii) exhibit a low thermal stability and iii) can be related to the simple point-like defects introduced by light ion implantation, namely interstitials and/or complex of interstitials and vacancies in both carbon and silicon sub-lattices. © 2017 IOP Publishing Ltd.

  3. Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS

    NASA Astrophysics Data System (ADS)

    Bonde Nielsen, K.; Dobaczewski, L.; Goscinski, K.; Bendesen, R.; Andersen, Ole; Bech Nielsen, B.

    1999-12-01

    We identify the acceptor levels (-/0) of the VH and V2H defects in silicon from comparison of DLTS and EPR annealing data. The levels are very close to each other and close to the acceptor level of the PV defect (the E-center) as well. In order to separate them, we have applied the high-resolution technique of Laplace DLTS and compared the formation and annealing properties of defects generated by implantation of hydrogen or helium. We further applied Laplace DLTS in combination with uniaxial stress to study the acceptor level at Ec-Et=0.31 eV previously assigned to a vacancy-hydrogen-oxygen defect. We find, in accordance with recent EPR measurements, that the defect displays orthorhombic-I symmetry and rule out that it contains two hydrogen atoms. The defect can be understood as a single hydrogen atom bound inside the A-center, the well-known VO defect of silicon, and we denote it VOH accordingly. The observed orthorhombic-I symmetry arises because the hydrogen atom (at T=160 K) swiftly jumps among two equivalent sites across the (1 1 0) plane that contains the Si-O-Si bond. Previous studies have shown that hydrogenation of oxygen-rich electron-irradiated samples leads to the formation of VOH with simultaneous depletion of the A-center. Our structural data are in accordance with this dynamic behavior.

  4. Complexity of Quantum Impurity Problems

    NASA Astrophysics Data System (ADS)

    Bravyi, Sergey; Gosset, David

    2017-08-01

    We give a quasi-polynomial time classical algorithm for estimating the ground state energy and for computing low energy states of quantum impurity models. Such models describe a bath of free fermions coupled to a small interacting subsystem called an impurity. The full system consists of n fermionic modes and has a Hamiltonian {H=H_0+H_{imp}} , where H 0 is quadratic in creation-annihilation operators and H imp is an arbitrary Hamiltonian acting on a subset of O(1) modes. We show that the ground energy of H can be approximated with an additive error {2^{-b}} in time {n^3 \\exp{[O(b^3)]}} . Our algorithm also finds a low energy state that achieves this approximation. The low energy state is represented as a superposition of {\\exp{[O(b^3)]}} fermionic Gaussian states. To arrive at this result we prove several theorems concerning exact ground states of impurity models. In particular, we show that eigenvalues of the ground state covariance matrix decay exponentially with the exponent depending very mildly on the spectral gap of H 0. A key ingredient of our proof is Zolotarev's rational approximation to the {√{x}} function. We anticipate that our algorithms may be used in hybrid quantum-classical simulations of strongly correlated materials based on dynamical mean field theory. We implemented a simplified practical version of our algorithm and benchmarked it using the single impurity Anderson model.

  5. Control of impurities in toroidal plasma devices

    DOEpatents

    Ohkawa, Tihiro

    1980-01-01

    A method and apparatus for plasma impurity control in closed flux plasma systems such as Tokamak reactors is disclosed. Local axisymmetrical injection of hydrogen gas is employed to reverse the normally inward flow of impurities into the plasma.

  6. Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

    NASA Astrophysics Data System (ADS)

    Gul, R.; Keeter, K.; Rodriguez, R.; Bolotnikov, A. E.; Hossain, A.; Camarda, G. S.; Kim, K. H.; Yang, G.; Cui, Y.; Carcelen, V.; Franc, J.; Li, Z.; James, R. B.

    2012-03-01

    We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[PbCd]+-V{Cd/2-}]-. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (VCd), and a deep trap at around 1.1 eV.

  7. Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates

    NASA Astrophysics Data System (ADS)

    Baranov, A. I.; Kleider, J. P.; Gudovskikh, A. S.; Darga, A.; Nikitina, E. V.; Egorov, A. Yu

    2016-08-01

    Defect properties of Ga(In)P(NAs) layers with different composition were studied by admittance spectroscopy. For nitrogen content layers the defect level with energy of 0.44-0.47 eV, which related to nitrogen incorporation into GaP, was observed. Its concentration is lower for GaPNAs layers compared to GaPN/InP due to better compensation by arsenic than by indium in lattice of GaP. Other defect level with energy of 0.30 eV was detected in GaPAs and GaPN/InP layers. Likely, the both observed defects in GaPAs and GaPN/InP have the same nature.

  8. Absolute pressure derivatives of deep level defects in III-V semiconductors

    SciTech Connect

    Nolte, D.D.; Walukiewicz, W.; Haller, E.E.

    1987-11-01

    Based on transition metal reference levels, we present absolute pressure derivatives for band-edges in GaAs and InP and defects in GaAs. The defect deformation potentials are directly related to the electron-lattice coupling which drives lattice relaxation around the defects. We find an exceedingly large inward lattice relaxation of the EL2 defect in GaAs upon electron emission. 12 refs., 1 fig.

  9. Interactive Sea Level Rise App & Online Viewer Offers Deep Dive Into Climate

    NASA Astrophysics Data System (ADS)

    Turrin, M.; Porter, D. F.; Ryan, W. B. F.; Pfirman, S. L.

    2015-12-01

    Climate has captured the attention of the public but its complexity can cause interested individuals to turn to opinion pieces, news articles or blogs for information. These platforms often oversimplify or present heavily interpreted or personalized perspectives. Data interactives are an extremely effective way to explore complex geoscience topics like climate, opening windows of understanding for the user that have previously been closed. Layering data onto maps through programs like GeoMapApp and the Earth Observer App has allowed users to dig directly into science data, but with only limited scaffolding. The interactive 'Polar Explorer: Sea Level Explorer App' provides a richly layered introduction to a range of topics connected to sea level rise. Each map is supported with a pop up and a short audio file of supplementary material, and an information page that includes the data source and links for further reading. This type of learning platform works well for both the formal and informal learning environment. Through science data displayed as map visualizations the user is invited into topics through an introductory question, such as "Why does sea level change?" After clicking on that question the user moves to a second layer of questions exploring the role of the ocean, the atmosphere, the contribution from the world's glaciers, world's ice sheets and other less obvious considerations such as the role of post-glacial rebound, or the mining of groundwater. Each question ends in a data map, or series of maps, that offer opportunities to interact with the topic. Under the role of the ocean 'Internal Ocean Temperature' offers the user a chance to touch to see temperature values spatially over the world's ocean, or to click through a data series starting at the ocean surface and diving to 5000 meters of depth showing how temperature changes with depth. Other sections, like the role of deglaciation of North America, allow the user to click and see change through

  10. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    NASA Astrophysics Data System (ADS)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-01

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  11. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    SciTech Connect

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-07

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V{sub 2}) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  12. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    SciTech Connect

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-02

    In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  13. Afterpulsing model based on the quasi-continuous distribution of deep levels in single-photon avalanche diodes

    NASA Astrophysics Data System (ADS)

    Horoshko, D. B.; Chizhevsky, V. N.; Kilin, S. Ya.

    2017-01-01

    We have performed a statistical characterization of the effect of afterpulsing in a free-running silicon single-photon detector by measuring the distribution of afterpulse waiting times in response to pulsed illumination and fitting it by a sum of exponentials. We show that a high degree of goodness of fit can be obtained for 5 exponentials, but the physical meaning of estimated characteristic times is dubious. We show that a continuous limit of the sum of exponentials with a uniform density between the limiting times gives excellent fitting results in the full range of the detector response function. This means that in certain detectors the afterpulsing is caused by a continuous band of deep levels in the active area of the photodetector.

  14. Investigation of defect properties in Cu(In,Ga)Se 2 solar cells by deep-level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Kerr, L. L.; Li, Sheng S.; Johnston, S. W.; Anderson, T. J.; Crisalle, O. D.; Kim, W. K.; Abushama, J.; Noufi, R. N.

    2004-09-01

    The performance of the chalcopyrite material Cu(In,Ga)Se 2 (CIGS) used as an absorber layer in thin-film photovoltaic devices is significantly affected by the presence of native defects. The deep-level transient spectroscopy (DLTS) technique is used in this work to characterize the defect properties, yielding relevant information about the defect types, their capture cross-sections, and energy levels and densities in the CIGS cells. Three solar cells developed using different absorber growth technologies were analyzed using DLTS, capacitance-voltage ( C- V), and capacitance-temperature ( C- T) techniques. It was found that CIS cells grown at the University of Florida exhibits a middle-gap defect level that may relate to the cell's low fill factor and open-circuit voltage values observed. A high efficiency ( ηc>18%) CIGS cell produced by the National Renewable Energy Laboratory (NREL) was found to contain three minority-carrier (electron) traps and a 13% CIGS cell produced by the Energy Photovoltaics Inc. (EPV) exhibited one majority (hole) trap. The approach followed using the DLTS technique serves as a paradigm for revealing the presence of significant defect levels in absorber materials, and may be used to support the identification of remedial processing operations.

  15. I- V and deep level transient spectroscopy studies on 60 MeV oxygen ion irradiated NPN transistors

    NASA Astrophysics Data System (ADS)

    Gnana Prakash, A. P.; Ke, S. C.; Siddappa, K.

    2004-02-01

    NPN transistors have been irradiated by 60 MeV oxygen ions in a fluence ranging from 5 × 10 10 to 1 × 10 13 ions/cm 2. The DC current gain ( hFE), excess base current ( ΔI B=I B post -I B pre ), excess collector current ( ΔI C=I C post -I C pre ) and collector saturation current (I C Sat ) of the ion irradiated transistors were studied systematically. The hFE of the transistors were found to be decreased drastically after ion irradiation. A significant increase has been observed in the collector current ( IC) along with the increase in the base current ( IB) after ion irradiation. The I C Sat of the ion irradiated transistors were also decreased significantly after irradiation. The radiation induced trap levels in the collector base depletion region of NPN transistors were studied by deep level transient spectroscopy technique and different types of trap levels were observed. The results obtained on the activation energy, density of trap levels, apparent capture cross section, introduction rate and space charge layer lifetime of different defects for different total fluence are presented and discussed.

  16. Entanglement in quantum impurity problems is nonperturbative

    NASA Astrophysics Data System (ADS)

    Saleur, H.; Schmitteckert, P.; Vasseur, R.

    2013-08-01

    We study the entanglement entropy of a region of length 2L with the remainder of an infinite one-dimensional gapless quantum system in the case where the region is centered on a quantum impurity. The coupling to this impurity is not scale invariant, and the physics involves a crossover between weak- and strong-coupling regimes. While the impurity contribution to the entanglement has been computed numerically in the past, little is known analytically about it, since in particular the methods of conformal invariance cannot be applied because of the presence of a crossover length. We show in this paper that the small coupling expansion of the entanglement entropy in this problem is quite generally plagued by strong infrared divergences, implying a nonperturbative dependence on the coupling. The large coupling expansion turns out to be better behaved, thanks to powerful results from the boundary CFT formulation and, in some cases, the underlying integrability of the problem. However, it is clear that this expansion does not capture well the crossover physics. In the integrable case—which includes problems such as an XXZ chain with a modified link, the interacting resonant level model or the anisotropic Kondo model—a nonperturbative approach is in principle possible using form factors. We adapt in this paper the ideas of Cardy [J. Stat. Phys.JSTPBS0022-471510.1007/s10955-007-9422-x 130, 129 (2008)] and Castro-Alvaredo and Doyon [J. Stat. Phys.JSTPBS0022-471510.1007/s10955-008-9664-2 134, 105 (2009)] to the gapless case and show that, in the rather simple case of the resonant level model, and after some additional renormalizations, the form-factors approach yields remarkably accurate results for the entanglement all the way from short to large distances. This is confirmed by detailed comparison with numerical simulations. Both our form factor and numerical results are compatible with a nonperturbative form at short distance.

  17. Interactions between impurities and breather-pairs in a nonlinear lattice

    NASA Astrophysics Data System (ADS)

    Lin, Han; Chen, Weizhong; Lu, Lei; Wei, Rongjue

    2003-09-01

    Based on the Frenkel-Kontorova (FK) model with a δ-impurity, this Letter investigates the interactions between impurities and breather-pairs in a nonlinear pendulum chain driven by a vertical vibration. The numerical results show that a long impurity in pendulum length can absorb more energy into the chain and upgrade the energy level of the breather-pair, when the driving frequency is slight lower than that of parametric resonance of the perfect pendulums, while a short one plays a counteractive role. As the chain is driven at a higher frequency, the effect of impurities turns reverse, which shows a clear symmetry and equivalency between long and short impurities. The main results including the effect and the symmetry of impurities generalize the conclusion on the single breather to the breather-pair.

  18. Quantum phase transitions in the bosonic single-impurity Anderson model

    NASA Astrophysics Data System (ADS)

    Lee, H.-J.; Bulla, R.

    2007-04-01

    We consider a quantum impurity model in which a bosonic impurity level is coupled to a non-interacting bosonic bath, with the bosons at the impurity site subject to a local Coulomb repulsion U. Numerical renormalization group calculations for this bosonic single-impurity Anderson model reveal a zero-temperature phase diagram where Mott phases with reduced charge fluctuations are separated from a Bose-Einstein condensed phase by lines of quantum critical points. We discuss possible realizations of this model, such as atomic quantum dots in optical lattices. Furthermore, the bosonic single-impurity Anderson model appears as an effective impurity model in a dynamical mean-field theory of the Bose-Hubbard model.

  19. Hierarchical Liouville-space approach for accurate and universal characterization of quantum impurity systems.

    PubMed

    Li, ZhenHua; Tong, NingHua; Zheng, Xiao; Hou, Dong; Wei, JianHua; Hu, Jie; Yan, YiJing

    2012-12-28

    A hierarchical equations of motion based numerical approach is developed for accurate and efficient evaluation of dynamical observables of strongly correlated quantum impurity systems. This approach is capable of describing quantitatively Kondo resonance and Fermi-liquid characteristics, achieving the accuracy of the latest high-level numerical renormalization group approach, as demonstrated on single-impurity Anderson model systems. Its application to a two-impurity Anderson model results in differential conductance versus external bias, which correctly reproduces the continuous transition from Kondo states of individual impurity to singlet spin states formed between two impurities. The outstanding performance on characterizing both equilibrium and nonequilibrium properties of quantum impurity systems makes the hierarchical equations of motion approach potentially useful for addressing strongly correlated lattice systems in the framework of dynamical mean-field theory.

  20. Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor

    NASA Astrophysics Data System (ADS)

    Seyidov, MirHasan Yu.; Mikailzade, Faik A.; Uzun, Talip; Odrinsky, Andrei P.; Yakar, Emin; Aliyeva, Vafa B.; Babayev, Sardar S.; Mammadov, Tofig G.

    2016-02-01

    Unusual behavior of pyroelectric current signal polarity near the Curie point (Tc) was observed for TlGaSe2 a ferroelectric-semiconductor. It has been revealed that the polarity of the spontaneous polarization near Tc depends on the sample poling prehistory. In particular, applying an external electric field only in the temperature range of the paraelectric state during cooling regime in darkness brought to the depolarization current at Tc with the sign opposite to the external field polarity. Otherwise, if the sample was poled in the temperature interval of the incommensurate phase, pyroelectric current exhibits a peak at Tc with the polarity that is the same as for the external poling electric field. These observations indicate that internal electric field is present in the bulk and near-surface layer regions of the electrically poled single crystal TlGaSe2. Possible mechanisms and origins responsible for the internal electric fields in TlGaSe2 are discussed. It is shown that the formation of internal electric fields in TlGaSe2 is due to charging of intrinsic native defects during the poling process. Characteristics of electrically active intrinsic defects in TlGaSe2 were investigated by using of Photo-Induced Current Transient Spectroscopy (PICTS) technique. Six deep defect levels in the band gap of TlGaSe2 were determined, which were localized both in the bulk and on the surface of the sample and could be electrically charged. The correlation between polarization effects and PICTS results has been established. It was shown that native deep defects (A3-A6) localized in the bulk of crystal are responsible for hetero-charge formation and negative sign of the pyroelectric current peak observed around the Curie temperature after poling the sample in the temperature intervals well above Tc. It was also shown that the positive sign pyrocurrent observed near the Curie point is attributed to the homo-charge formed by native A2-trapping centers which are localized near

  1. Diet and trophic level of the longnose spurdog Squalus blainville (Risso, 1826) in the deep waters of the Aegean Sea

    NASA Astrophysics Data System (ADS)

    Kousteni, Vasiliki; Karachle, Paraskevi K.; Megalofonou, Persefoni

    2017-06-01

    Knowledge of the diet and trophic level of marine predators is essential to develop an understanding of their ecological role in ecosystems. Research conducted on the trophic ecology of the deep-sea sharks is rather limited. The purpose of this study was to examine the diet of the longnose spurdog Squalus blainville, a deep-sea shark categorized as ;data deficient; within its distribution range, with respect to sex, maturity, age, season and sampling location. The stomach contents of 211 specimens, captured in the Aegean (off Skyros and the Cyclades Islands) and Cretan Seas, using commercial bottom-trawlers from 2005 to 2012, were analysed. The cumulative prey curve showed that the sample size was adequate to describe the species' diet. The identified prey items belonged to five major groups: Teleostei, Crustacea, Cephalopoda, Annelida and Phanerogams. Higher diet diversity was observed in females compared to males, in immature individuals compared to mature ones, regardless of sex, and in spring and winter compared to other seasons. Age and sampling location seemed to influence both the diet diversity and trophic spectrum of the species. Feeding intensity based on the vacuity index was not significantly influenced by any of the factors examined, while the stomach filling degree was significantly influenced by all factors, except sex, showing significantly higher values in mature females compared to immature ones, in older individuals, in autumn compared to winter, and a significantly lower value in the Cyclades Islands compared to other locations. Females showed a significant larger mouth length compared to males of the same length, while no between-sex differences were found in gut morphometrics. The estimated fractional trophic level (TROPH=4.41) classified the species as carnivore with a preference for Teleostei and Cephalopoda, confirming its high trophic position.

  2. On the behaviour and origin of the major deep level (EL2) in GaAs

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Parsey, J. M.; Kaminska, M.; Wada, K.; Gatos, H. C.

    1982-01-01

    In an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.

  3. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    SciTech Connect

    Costin, L.S.

    1997-10-01

    In this paper, the major elements of the site selection and characterization processes used in the US high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the US program, these processes, which are well defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the US program.

  4. The sea level budget along the Northwest Atlantic coast: GIA, mass changes and deep sea-shelf interaction

    NASA Astrophysics Data System (ADS)

    Frederikse, T.; Riva, R.; Simon, K.; Kleinherenbrink, M.

    2016-12-01

    Sea level along the Atlantic coast of the United States north of Cape Hatteras shows trends and accelerations above the global average. In this study we look at the individual contributors to sea level changes in this region over the period 1958-2014 and compare the sum of contributors with observations from tide gauges and GPS stations. Both observations are analyzed in a self-consistent framework that takes eustatic effects, geoid changes and solid earth deformation, resulting from both Glacial Isostatic Adjustment (GIA) and present-day mass redistribution into account. An updated data-driven model is used to constrain the GIA signal in the region, of which large parts are affected by the forebulge collapse, causing subsidence. The GIA signal explains the largest part of the observed sea level and vertical land motion trends, as well as a large fraction of the inter-station trend differences. Present-day mass redistribution caused by ice sheet and glacier melt, dam retention and groundwater depletion account for a smaller fraction of the observed trends. Altimetry and hydrographic observations and model results show that deep steric variability in the Northwest Atlantic results in a bottom pressure signal over the shelf, which explains, after removing regional meteorological effects, the vast majority of the observed decadal coastal variability and is responsible for a substantial upward trend. The sum of the individual processes explain most of the observed decadal sea level variability, as well as the observed linear trends in both sea level and vertical land motion. The trends in present-day ice mass loss and dynamic sea level do not deviate substantially from global-mean values. A significant sea level acceleration is observed, of which about half can be attributed to mass redistribution processes. The other half can be attributed to steric expansion in the Northwest Atlantic, although separating a secular acceleration from internal variability remains a

  5. Fundamental aspects of metallic impurities and impurity interactions in silicon during device processing

    SciTech Connect

    Graff, K.

    1995-08-01

    A review on the behavior of metallic impurities in silicon can be considerably simplified by a restriction on pure, dislocation-free, monocrystalline silicon. In this case interactions between different impurities and between impurities and grown-in lattice defects can be reduced. This restriction is observed in Chapter 1 for discussing the general behavior of metallic impurities in silicon.

  6. Individual and Partner-Level Factors Associated with Condom Non-Use Among African American STI Clinic Attendees in the Deep South: An Event-Level Analysis.

    PubMed

    Marshall, Brandon D L; Perez-Brumer, Amaya G; MacCarthy, Sarah; Mena, Leandro; Chan, Philip A; Towey, Caitlin; Barnett, Nancy; Parker, Sharon; Barnes, Arti; Brinkley-Rubinstein, Lauren; Rose, Jennifer S; Nunn, Amy S

    2016-06-01

    The US HIV/AIDS epidemic is concentrated in the Deep South, yet factors contributing to HIV transmission are not fully understood. We examined relationships between substance use, sexual partnership characteristics, and condom non-use in an African American sample of STI clinic attendees in Jackson, Mississippi. We assessed condom non-use at last intercourse with up to three recent sexual partners reported by participants between January and June 2011. Participant- and partner-level correlates of condom non-use were examined using generalized estimating equations. The 1295 participants reported 2880 intercourse events, of which 1490 (51.7 %) involved condom non-use. Older age, lower educational attainment, reporting financial or material dependence on a sex partner, sex with a primary partner, and higher frequency of sex were associated with increased odds of condomless sex. HIV prevention efforts in the South should address underlying socioeconomic disparities and structural determinants that result in partner dependency and sexual risk behavior.

  7. Characterization of high fluence neutron induced defect levels in high resistivity silicon detectors using a laser deep level transient spectroscopy (L-DLTS)

    NASA Astrophysics Data System (ADS)

    Chengji, Li; Li, Zheng

    1994-03-01

    Neutron irradiated high resistivity (4-6 kΩ-cm) silicon detectors in the neutron fluence ( Φn) range of 5 × 10 11 n/cm 2 to 1 × 10 14 n/cm 2 have been studied using a laser deep level transient spectroscopy (L-DLTS). It has been found that the A-center (oxygen-vacancy, Ec = 0.17 eV) concentration increases with neutron fluence, reaching a maximum at Φn ≈ 5×10 12 n/cm 2 before decreasing with Φn. A broad peak has been found between 200 K and 300 K, which is the result of the overlap of three single levels: the V-V - ( Ec = 0.38 eV), the E-center (P-v, Ec = 0.44 eV), and a level at Ec = 0.56 eV that is probably V-V 0. At low neutron fluences ( Φn < 5 × 10 12 n/cm 2), this broad peak is dominated by V-V - and the E-centers. However, as the fluence increases ( Φn ≥ 5 × 10 12 n/cm 2), the peak becomes dominated by the level of Ec = 0.56 eV.

  8. Detection of surface impurity phases in high T.sub.C superconductors using thermally stimulated luminescence

    DOEpatents

    Cooke, D. Wayne; Jahan, Muhammad S.

    1989-01-01

    Detection of surface impurity phases in high-temperature superconducting materials. Thermally stimulated luminescence has been found to occur in insulating impurity phases which commonly exist in high-temperature superconducting materials. The present invention is sensitive to impurity phases occurring at a level of less than 1% with a probe depth of about 1 .mu.m which is the region of interest for many superconductivity applications. Spectroscopic and spatial resolution of the emitted light from a sample permits identification and location of the impurity species. Absence of luminescence, and thus of insulating phases, can be correlated with low values of rf surface resistance.

  9. Impurity control studies using SOL flow in DIII-D

    SciTech Connect

    Wade, M.R.; Hogan, J.T.; Isler, R.C.

    1998-11-01

    Experiments on DIII-D have demonstrated the efficacy of using induced scrape-off-layer (SOL) flow to preferentially enrich impurities in the divertor plasma. This SOL flow is produced through simultaneous deuterium gas injection at the midplane and divertor exhaust. Using this SOL flow, an improvement in enrichment (defined as the ratio of impurity fraction in the divertor to that in the plasma core) has been observed for all impurities in trace-level experiments (i.e., impurity level is non-perturbative), with the degree of improvement increasing with impurity atomic number. In the case of argon, exhaust gas enrichment using a modest SOL flow is as high as 17. Using this induced SOL flow technique and argon injection, radiative ELMing H-mode plasmas have been produced that combine high radiation losses (P{sub rad}/P{sub input} > 70%), low core fuel dilution (Z{sub eff} < 1.9), and good core confinement ({tau}{sub E} > 1.0 {tau}{sub E},ITER93H).

  10. Modeling of concrete carbonation in deep geological disposal of intermediate level waste

    NASA Astrophysics Data System (ADS)

    Thouvenot, P.; Bildstein, O.; Munier, I.; Cochepin, B.; Poyet, S.; Bourbon, X.; Treille, E.

    2013-07-01

    Simulations of atmospheric carbonation of Intermediate-Level Long-lived radioactive Waste (ILLW) concrete packages were conducted to evaluate their possible chemical degradations. Two-phase liquid water-air flow is combined with gas component diffusion processes leading to a progressive drying of the concrete.Complete drying of the 11 cm thick waste disposal package wall occurs over a period ranging from 2 years for the low-performance concrete to 10 years for the high-performance concrete. The drying process slows down when transport characteristics of concretes are enhanced. Carbonation depths in the order of 2 to 3 cm in 100 years are predicted for this cementitious component. However, these values are slightly overestimated compared to experimental data. Also the kinetic model of mineral reactivity requires improvements with respect to the protective effect of secondary carbonates and to thermodynamic data.

  11. Dumping of low-level radioactive waste in the deep ocean

    SciTech Connect

    Templeton, W.L.

    1980-01-01

    Two international agreements relate to the dumping of packaged radioactive waste into the oceans - the Convention on the Prevention of Marine Pollution by Dumping Wastes and Other Matter of 1972 (London Convention) and the Multilateral Consultation and Surveillance Mechanism for Sea Dumping of Radioactive Waste of 1977 under the Organization for Economic Co-operation and Development (OECD). The International Atomic Energy Agency was given the responsibility to define high-level radioactive wastes which are unsuitable for dumping in the oceans and to make recommendations for the dumping of other radioactive wastes. A revised Definition and Recommendations was submitted and accepted by the London Convention. This paper reviews the technical basis for the Definition and describes how it has been applied to the radiological assessment of the only operational dumping site in the North East Atlantic.

  12. Low-cost, high-precision micro-lensed optical fiber providing deep-micrometer to deep-nanometer-level light focusing.

    PubMed

    Wen, Sy-Bor; Sundaram, Vijay M; McBride, Daniel; Yang, Yu

    2016-04-15

    A new type of micro-lensed optical fiber through stacking appropriate high-refractive microspheres at designed locations with respect to the cleaved end of an optical fiber is numerically and experimentally demonstrated. This new type of micro-lensed optical fiber can be precisely constructed with low cost and high speed. Deep micrometer-scale and submicrometer-scale far-field light spots can be achieved when the optical fibers are multimode and single mode, respectively. By placing an appropriate teardrop dielectric nanoscale scatterer at the far-field spot of this new type of micro-lensed optical fiber, a deep-nanometer near-field spot can also be generated with high intensity and minimum joule heating, which is valuable in high-speed, high-resolution, and high-power nanoscale detection compared with traditional near-field optical fibers containing a significant portion of metallic material.

  13. Impurity/defect interactions during MeV Si{sup +} ion implantation annealing

    SciTech Connect

    Agarwal, A.; Koveshnikov, S.; Christensen, K.

    1995-08-01

    Ion implantation of dopant atoms at MeV energies is currently being explored in several integrated circuit device manufacturing processes. MeV implantation offers immediate advantages such as vertical well modulation, latch-up protection, device structure isolation, and reduced temperature processing. Simultaneously, it presents an opportunity to achieve {open_quotes}proximity{close_quotes} gettering of impurities from the active device region by placing high impurity solubility and/or secondary defect gettering sites within microns of the surface. If the MeV implanted species is a dopant ion, all three gettering mechanisms, i.e, segregation, relaxation and injection, can be involved in the gettering process, complicating the analysis and optimization of the process. However, investigation of gettering using non-dopant Si{sup +} ion damage allows the relaxation component of the gettering process to be isolated and examined separately. In general, gettering is verified by a reduction in impurity concentration in the region of interest, usually the device region, and/or a build-up of concentration/precipitation in a non-device sink region. An alternate and more meaningful approach is to use simple devices as materials characterization probes via changes in the electrical activity of the gettering sites. Device space charge probes also allow the evolution of the defect sites upon contamination to be tracked. We report here results of the electrical, structural, and chemical characterization of MeV implanted Si{sup +} damage using Deep Level Transient Spectroscopy (DLTS), Transmission Electron Microscopy (TEM), and Secondary Ion Mass Spectroscopy (SIMS). The damage has been characterized both as a function of annealing from 600 to 1100{degrees}C for 1 hr, and after contamination with Fe followed by low temperature gettering annealing.

  14. Space charge suppression induced by deep traps in polyethylene/zeolite nanocomposite

    NASA Astrophysics Data System (ADS)

    Han, Bai; Wang, Xuan; Sun, Zhi; Yang, Jiaming; Lei, Qingquan

    2013-01-01

    NaY zeolite nanoparticles doped in low-density polyethylene (LDPE) is investigated. The zeolite nanoparticles are uniformly distributed in LDPE. Space charge distribution from pulsed electro-acoustic method and trap level from thermally stimulated current test are obtained. The results indicate that zeolite doping enormously suppresses space charge accumulation and reduces the conduction current by importing abundant deep traps. It can be explained that the zeolite nanoparticles increase the interface regions and introduce small size cavity traps from the porous surface of zeolite. The deep traps greatly weaken impurity ionization and carrier mobility, and raise potential barrier for charge injection.

  15. Effect of deep trapping states on space charge suppression in polyethylene/ZnO nanocomposite

    NASA Astrophysics Data System (ADS)

    Tian, Fuqiang; Lei, Qingquan; Wang, Xuan; Wang, Yi

    2011-10-01

    This letter intends to reveal the mechanism of space charge suppression in low density polyethylene (LDPE)/ZnO nanocomposites. Trap level and space charge distributions were obtained from modified isothermal discharge current method and pulsed electro-acoustic (PEA) method, respectively. The results showed that ZnO nanoparticle doping introduced large amounts of deep trapping states, significantly reduced space charge accumulation and conduction current. The results can be explained in terms of deep trapping states resulted from the interface regions and morphology structure changes by nanoparticles doping, which greatly reduced the charge mobility, raised the charge injection potential at the contact and weakened impurity ionization.

  16. Observation of impurity accumulation and concurrent impurity influx in PBX

    SciTech Connect

    Sesnic, S.S.; Fonck, R.J.; Ida, K.; Bol, K.; Couture, P.; Gammel, G.; Kaita, R.; Kaye, S.; Kugel, H.; LeBlanc, B.

    1986-07-01

    Impurity studies in L- and H-mode discharges in PBX have shown that both types of discharges can evolve into either an impurity accumulative or nonaccumulative case. In a typical accumulative discharge, Zeff peaks in the center to values of about 5. The central metallic densities can be high, n/sub met//n/sub e/ approx. = 0.01, resulting in central radiated power densities in excess of 1 W/cm/sup 3/, consistent with bolometric estimates. The radial profiles of metals obtained independently from the line radiation in the soft x-ray and the VUV regions are very peaked. Concurrent with the peaking, an increase in the impurity influx coming from the edge of the plasma is observed. At the beginning of the accumulation phase the inward particle flux for titanium has values of 6 x 10/sup 10/ and 10 x 10/sup 10/ particles/cm/sup 2/s at minor radii of 6 and 17 cm. At the end of the accumulation phase, this particle flux is strongly increased to values of 3 x 10/sup 12/ and 1 x 10/sup 12/ particles/cm/sup 2/s. This increased flux is mainly due to influx from the edge of the plasma and to a lesser extent due to increased convective transport. Using the measured particle flux, an estimate of the diffusion coefficient D and the convective velocity v is obtained.

  17. Protein phylogenies robustly resolve the deep-level relationships within Euglenozoa.

    PubMed

    Simpson, Alastair G B; Roger, Andrew J

    2004-01-01

    The deepest-level relationships amongst Euglenozoa remain poorly resolved, despite a rich history of morphological examination and numerous molecular phylogenetic studies of small subunit ribosomal RNA (SSU rRNA) data. We address this question using two nuclear-encoded proteins, the cytosolic isoforms of heat shock protein 90 (hsp90) and heat shock protein 70 (hsp70). For both proteins we examined sequences from the three primary groups within Euglenozoa (euglenids, diplonemids, and kinetoplastids), and from their close relatives, Heterolobosea. Maximum likelihood (ML) and ML distance analyses of these proteins support a close relationship between diplonemids and kinetoplastids to the exclusion of the euglenid Euglena gracilis. In hsp90 and combined protein analyses bootstrap support is very strong and alternative topologies are generally rejected by 'approximately unbiased' (AU) tests. This result is consistent with recent molecular biological and morphological data, but contradicts early structural accounts and many SSU rRNA analyses that favour a closer relationship between diplonemids and euglenids. However, a re-examination of an important SSU rRNA data set highlights the instability of the inferences from this marker. The protein analyses also suggest that bodonids are paraphyletic, with trypanosomatids grouping with 'clade 2' and 'clade 3' bodonids to the exclusion of 'clade 1' bodonids.

  18. Precision liquid-level measurement in deep tanks using a swept-RF resonant cavity

    NASA Astrophysics Data System (ADS)

    Piper, T. C.

    1992-03-01

    The Idaho Chemical Processing Plant (ICPP) has several large, temporary-liquid-storage tanks (50 feet diameter and 30 feet height). The tanks are located in separate underground cells. Because of the huge tank storage capacity per inch (1225 gallons), extremely accurate liquid depth measurement is required to observe normal additions (or to become aware of other than large leaks). In roughly 1970, Glenn Booman, then the header of the advanced instrumentation group of ICPP, began a program to develop what in a few years became known as 'IRF tank probes'. The initial probe was installed in tank WM-189 in 1975 and ten more were installed in other tanks in 1976. Though the RF components were fairly costly at that time, they were readily available and the system has, in general, operated without incident. Three of the most desirable features of the system not found in most other continuous reading level systems are that it exhibits no hysteresis, no creep and requires no calibration. In the years since installation the RF distribution system has been upgraded and the method of data processing has been changed somewhat. Presently, the need for more probes for more tanks has renewed interest. The original development work was never fully documented. The present talk is taken from a report being written to comprehensively describe the theory and operation of the RF probe.

  19. Study of the effects of impurities on the properties of silicon solar cell

    NASA Technical Reports Server (NTRS)

    Sah, C. T.

    1981-01-01

    The effect of defects across the back-surface-field junction on the performance of high efficiency and thin solar cells, using a developed-perimeter device model for the three-dimensional defects is investigated. Significant degradation of open-circuit voltage can occur even if there are only a few defects distributed in the bulk of the solar cell. Two features in the thickness dependences of the fill factor and efficiency in impurity-doped back-surface-field solar cells are discovered in the exact numerical solution which are associated with the high injection level effect in the base and not predicted by the low-level analytical theory. What are believed to be the most accurate recombination parameters at the Ti center to date are also given and a theory is developed which is capable of distinguishing an acceptor-like deep level from a donor-like deep level using the measured values of the thermal emission and capture cross sections.

  20. High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

    NASA Astrophysics Data System (ADS)

    Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mannan, Mohammad A.; Mandal, Krishna C.

    2015-08-01

    High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 samples. The metal-semiconductor junctions were fabricated by photolithography and dc sputtering with ruthenium (Ru). The junction properties were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Detectors were characterized by alpha spectroscopy measurements in terms of energy resolution and charge collection efficiency using a 0.1 μCi 241Am radiation source. It was found that detectors fabricated from high work function rare transition metal Ru demonstrated very low leakage current and significant improvement of detector performance. Defect characterization of the epitaxial layers was conducted by deep level transient spectroscopy (DLTS) to thoroughly investigate the defect levels in the active region. The presence of a new defect level induced by this rare transition metal-semiconductor interface has been identified and characterized.

  1. Particle fueling and impurity control in PDX

    SciTech Connect

    Fonck, R.J.; Bell, M.; Bol, K.; Budny, R.; Couture, P.; Darrow, D.; Dylla, H.; Goldston, R.; Grek, B.; Hawryluk, R.

    1984-12-01

    Fueling requirements and impurity levels in neutral-beam-heated discharges in the PDX tokamak have been compared for plasmas formed with conventional graphite rail limiters, a particle scoop limiter, and an open or closed poloidal divertor. Gas flows necessary to obtain a given density are highest for diverted discharges and lowest for the scoop limiter. Hydrogen pellet injection provides an efficient alternate fueling technique, and a multiple pellet injector has produced high density discharges for an absorbed neutral beam power of up to 600 kW, above which higher speeds or more massive pellets are required for penetration to the plasma core. Power balance studies indicate that 30 to 40% of the total input power is radiated while approx. 15% is absorbed by the limiting surface, except in the open divertor case, where 60% flows to the neutralizer plate. In all operating configurations, Z/sub eff/ usually rises at the onset of neutral beam injection. Both open divertor plasmas and those formed on a well conditioned water-cooled limiter have Z/sub eff/ less than or equal to 2 at the end of neutral injection. A definitive comparison of divertors and limiters for impurity control purposes requires longer beam pulses or higher power levels than available on present machines.

  2. Zr and U determination at trace level in simulated deep groundwater by Q ICP-MS using extraction chromatography.

    PubMed

    Gautier, C; Coppo, M; Caussignac, C; Laszak, I; Fichet, P; Goutelard, F

    2013-03-15

    In the framework of trace element analysis by Q ICP-MS in a simulated deep Callovo-Oxfordian groundwater, separation procedures based on extraction chromatography were developed to eliminate the high salt contents and to concentrate Zr and U simultaneously. Theoretical and experimental speciation studies showed the importance of adjusting the medium to HNO₃/HF (0.5 M/0.005 M) to guarantee the stability over time of the analytes before removal of the matrix. Two preconcentration methods based on TRU and TODGA resins were optimized for the simultaneous isolation of Zr and U prior to Q ICP-MS measurements. Using TRU resin, alkali and alkali earth metals contained in the deep groundwater were removed with 2 M HNO₃ whereas Zr and U were recovered with a HNO₃/NH₄HC₂O₄ (0.02 M/0.05 M) medium. For the separation protocol based on TODGA resin, alkali and alkali earth metals were eliminated with 3 M and 11 M HNO₃ while Zr and U were simultaneously stripped with a HNO₃/HF (0.5 M/0.2 M) medium. The procedure optimized on TODGA resin was validated with the French AFNOR NF T90-210 standard by studying linearity, limits of quantification (LOQ) and separation yields. The LOQ was determined at 0.008 μg L(-1) for Zr and U after the separation. Both analytes were recovered quantitatively. Compared to a sample dilution implemented to reduce the matrix effects, the developed preconcentration method allowed improving the sensitivity up to a 20 fold factor for Zr and U measurements at trace level by Q ICP-MS. Copyright © 2012 Elsevier B.V. All rights reserved.

  3. Impurity diffusion in transition-metal oxides

    SciTech Connect

    Peterson, N.L.

    1982-06-01

    Intrinsic tracer impurity diffusion measurements in ceramic oxides have been primarily confined to CoO, NiO, and Fe/sub 3/O/sub 4/. Tracer impurity diffusion in these materials and TiO/sub 2/, together with measurements of the effect of impurities on tracer diffusion (Co in NiO and Cr in CoO), are reviewed and discussed in terms of impurity-defect interactions and mechanisms of diffusion. Divalent impurities in divalent solvents seem to have a weak interaction with vacancies whereas trivalent impurities in divalent solvents strongly influence the vacancy concentrations and significantly reduce solvent jump frequencies near a trivalent impurity. Impurities with small ionic radii diffuse more slowly with a larger activation energy than impurities with larger ionic radii for all systems considered in this review. Cobalt ions (a moderate size impurity) diffuse rapidly along the open channels parallel to the c-axis in TiO/sub 2/ whereas chromium ions (a smaller-sized impurity) do not. 60 references, 11 figures.

  4. Gaseous trace impurity analyzer and method

    DOEpatents

    Edwards, Jr., David; Schneider, William

    1980-01-01

    Simple apparatus for analyzing trace impurities in a gas, such as helium or hydrogen, comprises means for drawing a measured volume of the gas as sample into a heated zone. A segregable portion of the zone is then chilled to condense trace impurities in the gas in the chilled portion. The gas sample is evacuated from the heated zone including the chilled portion. Finally, the chilled portion is warmed to vaporize the condensed impurities in the order of their boiling points. As the temperature of the chilled portion rises, pressure will develop in the evacuated, heated zone by the vaporization of an impurity. The temperature at which the pressure increase occurs identifies that impurity and the pressure increase attained until the vaporization of the next impurity causes a further pressure increase is a measure of the quantity of the preceding impurity.

  5. Semi-preparative LC-SPE-cryoflow NMR for impurity identifications: use of mother liquor as a better source of impurities.

    PubMed

    Rinaldi, Frank; Fan, Junying; Pathirana, Charles; Palaniswamy, Venkatapurim

    2013-09-01

    Unambiguous structural elucidation of active pharmaceutical ingredients (API) impurities is a particularly challenging necessity of pharmaceutical development, particularly if the impurities are low level (0.1% level). In many cases, this requires acquiring high-quality NMR data on a pure sample of each impurity. High-quality, high signal-to-noise (S/N) one- and two-dimensional NMR data can be obtained using liquid chromatography-solid phase extraction-cryoflow NMR (LC-SPE-cryoflow NMR) with a combination of semi-preparative column for separation and mother liquor as a source of concentrated impurities. These NMR data, in conjunction with mass spectrometry data, allowed for quick and unambiguous structural elucidations of four impurities found at low level in the crystallized API but found at appreciable levels in the mother liquor that was used as the source for these impurities. These data show that semi-preparative columns can be used at lower than ideal flow rates to facilitate trapping of HPLC components for LC-SPE-cryoflow NMR analysis without compromising chromatographic resolution. Also, despite the complex chromatography encountered with the use of mother liquor as a source of impurities, acceptably pure analytes were obtained for acquiring NMR data for unambiguous structure elucidations.

  6. Self-pumping impurity control

    DOEpatents

    Brooks, J.N.; Mattas, R.F.

    1983-12-21

    It is an object of the present invention to provide an apparatus for removing impurities from the plasma in a fusion reactor without an external vacuum pumping system. It is also an object of the present invention to provide an apparatus for removing the helium ash from a fusion reactor. It is another object of the present invention to provide an apparatus which removes helium ash and minimizes tritium recycling and inventory.

  7. Impurity solvation in a liquid

    NASA Astrophysics Data System (ADS)

    Tehver, Riina; Cole, Milton W.; Maritan, Amos; Koplik, Joel; Banavar, Jayanth R.

    1998-02-01

    A set of model calculations is presented concerning the problem of impurity solvation. The methods include lattice gas, evaluated exactly as well as in the mean-field approximation, and molecular-dynamics simulation. Our results are in quantitative accord with simple energy balance arguments, but a solvation parameter suggested by Ancilotto, Lerner and Cole [J. Low Temp. Phys. 101, 1123 (1995)] is found to be nonuniversal.

  8. Investigation on origin of Z{sub 1/2} center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

    SciTech Connect

    Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu; Thang Trinh, Xuan; Tien Son, Nguyen; Janzen, Erik

    2013-03-18

    The Z{sub 1/2} center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z{sub 1/2} center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z{sub 1/2} defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (V{sub C}) determined by electron paramagnetic resonance, suggesting that the Z{sub 1/2} deep level originates from V{sub C}.

  9. Are carbon nanotubes with impurities and structure disorder metals or semiconductors?

    NASA Astrophysics Data System (ADS)

    Bobenko, N. G.; Egorushkin, V. E.; Melnikova, N. V.; Ponomarev, A. N.

    2014-06-01

    Electron relaxation time and density of states near the Fermi level were calculated for ‘dirty’ carbon nanotubes taking into account multiple elastic electrons scattering on impurities and structural inhomogeneities of a short-range order type. A possible explanation of low-temperature behavior of density of states and electrical conductivity depending on defect structure, impurities and diameter of nanotube is presented.

  10. Effect of hydrogenic impurity on the third-harmonic generation in a quantum well

    NASA Astrophysics Data System (ADS)

    Zhang, Zhongmin; Guo, Kangxian; Mou, Sen; Xiao, Bo; Liao, Lei

    2014-12-01

    The third-harmonic generation (THG) coefficients in a quantum well with hydrogenic impurity are theoretically investigated with the compact-density-matrix approach and iterative method. The wave functions and the energy levels can be obtained by using variational method and numerical method. Numerical results show that the THG coefficients are strongly affected by the hydrogenic impurity.

  11. Thermal evolution and exhumation of deep-level batholithic exposures, southernmost Sierra Nevada, California

    USGS Publications Warehouse

    Saleeby, J.; Farley, K.A.; Kistler, R.W.; Fleck, R.J.

    2007-01-01

    The Tehachapi complex lies at the southern end of the Sierra Nevada batholith adjacent to the Neogene-Quaternary Garlock fault. The complex is composed principally of high-pressure (8-10 kbar) Cretaceous batholithic rocks, and it represents the deepest exposed levels of a continuous oblique crustal section through the southern Sierra Nevada batholith. Over the southern ???100 km of this section, structural/petrologic continuity and geochronological data indicate that ???35 km of felsic to intermediate-composition crust was generated by copious arc magmatism primarily between 105 and 99 Ma. In the Tehachapi complex, these batholithic rocks intrude and are bounded to the west by similar-composition gneissic-textured high-pressure batholithic rocks emplaced at ca. 115-110 Ma. This lower crustal complex is bounded below by a regional thrust system, which in Late Cretaceous time tectonically eroded the underlying mantle lithosphere, and in series displaced and underplated the Rand Schist subduction assemblage by low-angle slip from the outboard Franciscan trench. Geophysical and mantle xenolith studies indicate that the remnants of this shallow subduction thrust descend northward through the crust and into the mantle, leaving the mantle lithosphere intact beneath the greater Sierra Nevada batholith. This north-dipping regional structure records an inflection in the Farallon plate, which was segmented into a shallow subduc-tion trajectory to the south and a normal steeper trajectory to the north. We combine new and published data from a broad spectrum of thermochronom-eters that together form a coherent data array constraining the thermal evolution of the complex. Integration of these data with published thermobarometric and petro-genetic data also constrains the tectonically driven decompression and exhumation history of the complex. The timing of arc magmatic construction of the complex, as denoted above, is resolved by a large body of U/Pb zircon ages. High

  12. Determination of localized trap parameters in organic semiconductors using charge based deep level transient spectroscopy (Q-DLTS)

    NASA Astrophysics Data System (ADS)

    Nguyen, T. P.; Ip, J.; Gaudin, O.; Jackman, R. B.

    2004-07-01

    In organic light emitting diodes (OLEDs), localized traps within the band gap of the organic semiconductor play a fundamental role in the light emission process. Trapped charge carriers cannot recombine efficiently and therefore do not contribute to the emission. The determination of the trap parameters in the emitting layer is especially important in the evaluation of the efficiency of such devices. We have investigated the trap parameters in some organic semiconductors using the Charge-Based Deep Level Transient Spectroscopy (Q-DLTS) technique. Examples are given in poly(p phenylene vinylene) or PPV and 4, 4'-bis(4-dimethylaminostryryl) or DMASB, for which the trap level, the trap density, and the capture cross section were determined. In addition, it was possible to identify the carrier type (minority and majority) traps in these semiconductors. The results were compared with those obtained in similar materials by other techniques such as conventional DLTS, thermally stimulated currents (TSC), impedance measurements. Q-DLTS appears to be a powerful tool for studying defects in organic semiconductors.

  13. Deep Uncertainties in Sea-Level Rise and Storm Surge Projections: Implications for Coastal Flood Risk Management.

    PubMed

    Oddo, Perry C; Lee, Ben S; Garner, Gregory G; Srikrishnan, Vivek; Reed, Patrick M; Forest, Chris E; Keller, Klaus

    2017-09-05

    Sea levels are rising in many areas around the world, posing risks to coastal communities and infrastructures. Strategies for managing these flood risks present decision challenges that require a combination of geophysical, economic, and infrastructure models. Previous studies have broken important new ground on the considerable tensions between the costs of upgrading infrastructure and the damages that could result from extreme flood events. However, many risk-based adaptation strategies remain silent on certain potentially important uncertainties, as well as the tradeoffs between competing objectives. Here, we implement and improve on a classic decision-analytical model (Van Dantzig 1956) to: (i) capture tradeoffs across conflicting stakeholder objectives, (ii) demonstrate the consequences of structural uncertainties in the sea-level rise and storm surge models, and (iii) identify the parametric uncertainties that most strongly influence each objective using global sensitivity analysis. We find that the flood adaptation model produces potentially myopic solutions when formulated using traditional mean-centric decision theory. Moving from a single-objective problem formulation to one with multiobjective tradeoffs dramatically expands the decision space, and highlights the need for compromise solutions to address stakeholder preferences. We find deep structural uncertainties that have large effects on the model outcome, with the storm surge parameters accounting for the greatest impacts. Global sensitivity analysis effectively identifies important parameter interactions that local methods overlook, and that could have critical implications for flood adaptation strategies. © 2017 Society for Risk Analysis.

  14. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

    SciTech Connect

    Zhang, Z.; Farzana, E.; Sun, W. Y.; Arehart, A. R.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Kyle, E. C. H.; Speck, J. S.

    2015-10-21

    The impact of annealing of proton irradiation-induced defects in n-type GaN devices has been systematically investigated using deep level transient and optical spectroscopies. Moderate temperature annealing (>200–250 °C) causes significant reduction in the concentration of nearly all irradiation-induced traps. While the decreased concentration of previously identified N and Ga vacancy related levels at E{sub C} − 0.13 eV, 0.16 eV, and 2.50 eV generally followed a first-order reaction model with activation energies matching theoretical values for N{sub I} and V{sub Ga} diffusion, irradiation-induced traps at E{sub C} − 0.72 eV, 1.25 eV, and 3.28 eV all decrease in concentration in a gradual manner, suggesting a more complex reduction mechanism. Slight increases in concentration are observed for the N-vacancy related levels at E{sub C} − 0.20 eV and 0.25 eV, which may be due to the reconfiguration of other N-vacancy related defects. Finally, the observed reduction in concentrations of the states at E{sub C} − 1.25 and E{sub C} − 3.28 eV as a function of annealing temperature closely tracks the detailed recovery behavior of the background carrier concentration as a function of annealing temperature. As a result, it is suggested that these two levels are likely to be responsible for the underlying carrier compensation effect that causes the observation of carrier removal in proton-irradiated n-GaN.

  15. On exchange interaction between shallow impurity centers in diluted semiconductors.

    NASA Astrophysics Data System (ADS)

    Krotkov, Pavel; Gor'kov, Lev

    2003-03-01

    We generalize the method developed in [1,2] to obtain asymptotically exact expressions for the exchange splitting in semiconductors of the levels of carriers localized on shallow impurities at small impurity concentrations (large inter-center separations). Our approach takes into account degeneracy inherent to shallow centers in most semiconductors. We also consider the effects of spin-orbital interaction and of an external magnetic field. [1] L.P. Gor'kov and L.P. Pitaevskii, Dokl. Akad. Nauk SSSR 151, 822 (1963) [Sov. Phys. Dokl. 8, 788 (1964)]. [2] C. Herring and M. Flicker, Phys. Rev. 134, A362 (1964)].

  16. Virmid: accurate detection of somatic mutations with sample impurity inference.

    PubMed

    Kim, Sangwoo; Jeong, Kyowon; Bhutani, Kunal; Lee, Jeong; Patel, Anand; Scott, Eric; Nam, Hojung; Lee, Hayan; Gleeson, Joseph G; Bafna, Vineet

    2013-08-29

    Detection of somatic variation using sequence from disease-control matched data sets is a critical first step. In many cases including cancer, however, it is hard to isolate pure disease tissue, and the impurity hinders accurate mutation analysis by disrupting overall allele frequencies. Here, we propose a new method, Virmid, that explicitly determines the level of impurity in the sample, and uses it for improved detection of somatic variation. Extensive tests on simulated and real sequencing data from breast cancer and hemimegalencephaly demonstrate the power of our model. A software implementation of our method is available at http://sourceforge.net/projects/virmid/.

  17. Virmid: accurate detection of somatic mutations with sample impurity inference

    PubMed Central

    2013-01-01

    Detection of somatic variation using sequence from disease-control matched data sets is a critical first step. In many cases including cancer, however, it is hard to isolate pure disease tissue, and the impurity hinders accurate mutation analysis by disrupting overall allele frequencies. Here, we propose a new method, Virmid, that explicitly determines the level of impurity in the sample, and uses it for improved detection of somatic variation. Extensive tests on simulated and real sequencing data from breast cancer and hemimegalencephaly demonstrate the power of our model. A software implementation of our method is available at http://sourceforge.net/projects/virmid/. PMID:23987214

  18. Effect of subband mixing on the energy levels of a hydrogenic impurity in a GaAs/Ga1-xAlxAs double quantum well in a magnetic field

    NASA Astrophysics Data System (ADS)

    Nguyen, N.; Ranganathan, R.; McCombe, B. D.; Rustgi, M. L.

    1992-05-01

    In view of the recent evidence found in favor of subband mixing in coupling of confined impurity states in doped double-quantum-well structures, a variational approach employing Gaussian trial wave functions has been used to calculate the binding energies of the ground, (1s, m=0) and first excited, (2p-, m=-1) states of a hydrogenic donor associated with the mixture of subbands of a double-GaAs quantum well coupled by a layer of Ga1-xA1xAs in the presence of a magnetic field. Two different well sizes and three different locations of the impurity, (A) at the outer edge, (B) at the center, and (C) at the inner edge of the well, are considered, and the barrier width is allowed to vary. It is found that for the structures considered here the results from the calculations using the mixture of only first (symmetric) and second (asymmetric) subbands are significantly different from those using only the lowest (symmetric) subband, especially for the intermediate barrier widths, and depend strongly on the location of the impurity in the well. These results demonstrate that subband mixing should be included in double-quantum-well structure calculations. The effect of varying the magnetic field on the binding energies is also studied. A comparison with the measurements of Ranganathan et al. [Phys. Rev. B 44, 1423 (1991)] demonstrates that the agreement is not improved when mixing of subbands higher than the lowest two is included in the calculation.

  19. Identification and synthesis of potential impurities of rabeprazole sodium.

    PubMed

    Pingili, R Reddy; Jambula, M Reddy; Ganta, M Reddy; Ghanta, M Reddy; Sajja, E; Sundaram, V; Boluggdu, V Bhaskar

    2005-11-01

    Rabeprazole sodium (1, Achiphex) is a gastric proton pump inhibitor. It causes dose-dependent inhibition of acid secretion and is useful as an anti-ulcer agent. In the process for the preparation of 1, two potential unknown impurities were identified in HPLC at levels ranging from 0.05-0.8%. Based on mass spectral data vide LC-MS, the two impurities were characterized as 2-{[(4-chloro-3-methyl-2-pyridinyl) methyl] sulfinyl}-1H-bezimidazole (2, chloro analogue of rabeprazole) and 2-[{(4-methoxy-3-methyl-2-pyridinyl)methyl}sulfinyl]-1H-benzimidazole (3, methoxy analogue of rabeprazole). The structures were unambiguously established by independently synthesizing them and co-injecting in HPLC. To our knowledge, the compounds 2 and 3 have not been reported as process impurities elsewhere.

  20. Stimulated emission on impurity – band optical transitions in semiconductors

    SciTech Connect

    Bekin, N A; Shastin, V N

    2015-02-28

    This paper examines conditions for population inversion and amplification in the terahertz range using impurity – band electron transitions in semiconductors and semiconductor structures. Our estimates indicate that stimulated emission on such transitions under optical excitation of impurities can be obtained in a semiconductor with a sufficiently high doping level if electron heating is restricted. At a CO{sub 2} laser pump power density near 0.2 MW cm{sup -2} (photon energy of 117 meV), the gain in n-GaAs may exceed the loss by 50 cm{sup -1} provided the electron gas temperature does not exceed 40 K. We analyse the influence of the carrier effective mass and doping compensation on the gain coefficient and briefly discuss the use of resonance tunnelling for obtaining stimulated emission on impurity – band transitions in quantum cascade heterostructures. (terahertz radiation)

  1. Macroscopic scattering of cracks initiated at single impurity atoms

    NASA Astrophysics Data System (ADS)

    Kermode, J. R.; Ben-Bashat, L.; Atrash, F.; Cilliers, J. J.; Sherman, D.; de Vita, A.

    2013-09-01

    Brittle crystals, such as coloured gems, have long been known to cleave with atomically smooth fracture surfaces, despite being impurity laden, suggesting that isolated atomic impurities do not generally cause cracks to deflect. Whether cracks can ever deviate when hitting an atomic defect, and if so how they can go straight in real brittle crystals, which always contain many such defects, is still an open question. Here we carry out multiscale molecular dynamics simulations and high-resolution experiments on boron-doped silicon, revealing that cracks can be deflected by individual boron atoms. The process, however, requires a characteristic minimum time, which must be less than the time spent by the crack front at the impurity site. Deflection therefore occurs at low crack speeds, leading to surface ridges which intensify when the boron-dopage level is increased, whereas fast-moving cracks are dynamically steered away from being deflected, yielding smooth cleavage surfaces.

  2. Macroscopic scattering of cracks initiated at single impurity atoms.

    PubMed

    Kermode, J R; Ben-Bashat, L; Atrash, F; Cilliers, J J; Sherman, D; De Vita, A

    2013-01-01

    Brittle crystals, such as coloured gems, have long been known to cleave with atomically smooth fracture surfaces, despite being impurity laden, suggesting that isolated atomic impurities do not generally cause cracks to deflect. Whether cracks can ever deviate when hitting an atomic defect, and if so how they can go straight in real brittle crystals, which always contain many such defects, is still an open question. Here we carry out multiscale molecular dynamics simulations and high-resolution experiments on boron-doped silicon, revealing that cracks can be deflected by individual boron atoms. The process, however, requires a characteristic minimum time, which must be less than the time spent by the crack front at the impurity site. Deflection therefore occurs at low crack speeds, leading to surface ridges which intensify when the boron-dopage level is increased, whereas fast-moving cracks are dynamically steered away from being deflected, yielding smooth cleavage surfaces.

  3. Radiation rates for low Z impurities in edge plasmas

    SciTech Connect

    Clark, R.; Abdallah, J.; Post, D.

    1994-08-01

    The potential role of impurity radiation in the reduction of heat loads on divertor plates places a new degree of importance on the accuracy of low Z impurity radiation emission rates for electron temperatures below 300 eV. We have calculated the radiated power loss using a collisional-radiative model for Be, B, C, Ne and Ar using a multiple configuration interaction model which includes density dependent effects, as well as a very detailed treatment of the energy levels and meta-stables. These rates indicate that significant enhancements above steady state collisional-radiative rates due to such effects as rapid recycling and charge exchange recombination will be necessary for impurity radiation to reduce the peak heat loads on divertor plates for high heat flux experiments such as ITER.

  4. Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS

    NASA Astrophysics Data System (ADS)

    Gelczuk, Ł.; Kamyczek, P.; Płaczek-Popko, E.; Dąbrowska-Szata, M.

    2014-09-01

    Electrical properties of commercial silicon carbide (SiC) Schottky rectifiers are investigated through the measurement and analysis of the forward current-voltage (I-V) and reverse capacitance-voltage (C-V) characteristics in a large temperature range. Some of devices show distinct discrepancies in specific ranges of their electrical characteristics, especially the excess current dominates at voltage <1 V and temperature <300 K. Standard deep level transient spectroscopy (DLTS) revealed the presence of a single deep-level defect with activation energy of about 0.3 eV, exhibiting the features characteristic for extended defects (e.g. dislocations), such as logarithmic capture kinetics. Furthermore, high-resolution Laplace DLTS showed that this deep level consists actually of three closely spaced levels with activation energies ranging from about 0.26 eV to 0.29 eV. A strong correlation between these two techniques implies that the revealed trap level is due to extended defects surrounded by point traps or clusters of defects. On the basis of obtained specific features of the deep-level defect, it was proposed that this defect is arguably responsible for the observed Schottky barrier inhomogeneities.

  5. Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP

    NASA Astrophysics Data System (ADS)

    Martin, Jaime M.; García, S.; Mártil, I.; González-Díaz, G.; Castán, E.; Dueñas, S.

    1995-11-01

    Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forward bias is recombination in the space-charge zone, whereas a thermally activated tunneling mechanism involving a trap at 0.32 eV dominates at reverse bias. Five deep levels located in the upper-half of the band gap were detected in the junctions by DLTS measurements, three of which (at 0.6, 0.45, and 0.425 eV) were found to appear due to rapid thermal annealing. The origin of the other two levels, at 0.31 and 0.285 eV, can be ascribed to implantation damage. Admittance spectroscopy measurements showed the presence of three levels at 0.44, 0.415, and 0.30 eV, all in agreement with those found by DLTS. The DLTS measurements showed that the concentration of deep levels decreased after longer annealing times, and that the concentration of deep levels due to the implantation increased after additional P or Si implantations. This explains the influence of annealing time and additional implantations on the I-V characteristics of the junctions.

  6. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur in... reactions. (iv) The possible degradation of the ingredients in the product after its production but prior to its use. (v) Post-production reactions between the ingredients in the product. (vi) The...

  7. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur in... reactions. (iv) The possible degradation of the ingredients in the product after its production but prior to its use. (v) Post-production reactions between the ingredients in the product. (vi) The...

  8. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur in... reactions. (iv) The possible degradation of the ingredients in the product after its production but prior to its use. (v) Post-production reactions between the ingredients in the product. (vi) The...

  9. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur in... reactions. (iv) The possible degradation of the ingredients in the product after its production but prior to its use. (v) Post-production reactions between the ingredients in the product. (vi) The...

  10. Impurity-induced divertor plasma oscillations

    SciTech Connect

    Smirnov, R. D.; Kukushkin, A. S.; Krasheninnikov, S. I.; Pigarov, A. Yu.; Rognlien, T. D.

    2016-01-07

    Two different oscillatory plasma regimes induced by seeding the plasma with high- and low-Z impurities are found for ITER-like divertor plasmas, using computer modeling with the DUSTT/UEDGE and SOLPS4.3 plasma-impurity transport codes. The oscillations are characterized by significant variations of the impurity-radiated power and of the peak heat load on the divertor targets. Qualitative analysis of the divertor plasma oscillations reveals different mechanisms driving the oscillations in the cases of high- and low-Z impurity seeding. The oscillations caused by the high-Z impurities are excited near the X-point by an impurity-related instability of the radiation-condensation type, accompanied by parallel impurity ion transport affected by the thermal and plasma friction forces. The driving mechanism of the oscillations induced by the low-Z impurities is related to the cross-field transport of the impurity atoms, causing alteration between the high and low plasma temperature regimes in the plasma recycling region near the divertor targets. As a result, the implications of the impurity-induced plasma oscillations for divertor operation in the next generation tokamaks are also discussed.

  11. Impurity-induced divertor plasma oscillations

    SciTech Connect

    Smirnov, R. D. Krasheninnikov, S. I.; Pigarov, A. Yu.; Kukushkin, A. S.; Rognlien, T. D.

    2016-01-15

    Two different oscillatory plasma regimes induced by seeding the plasma with high- and low-Z impurities are found for ITER-like divertor plasmas, using computer modeling with the DUSTT/UEDGE and SOLPS4.3 plasma-impurity transport codes. The oscillations are characterized by significant variations of the impurity-radiated power and of the peak heat load on the divertor targets. Qualitative analysis of the divertor plasma oscillations reveals different mechanisms driving the oscillations in the cases of high- and low-Z impurity seeding. The oscillations caused by the high-Z impurities are excited near the X-point by an impurity-related instability of the radiation-condensation type, accompanied by parallel impurity ion transport affected by the thermal and plasma friction forces. The driving mechanism of the oscillations induced by the low-Z impurities is related to the cross-field transport of the impurity atoms, causing alteration between the high and low plasma temperature regimes in the plasma recycling region near the divertor targets. The implications of the impurity-induced plasma oscillations for divertor operation in the next generation tokamaks are also discussed.

  12. Impurity-induced divertor plasma oscillations

    DOE PAGES

    Smirnov, R. D.; Kukushkin, A. S.; Krasheninnikov, S. I.; ...

    2016-01-07

    Two different oscillatory plasma regimes induced by seeding the plasma with high- and low-Z impurities are found for ITER-like divertor plasmas, using computer modeling with the DUSTT/UEDGE and SOLPS4.3 plasma-impurity transport codes. The oscillations are characterized by significant variations of the impurity-radiated power and of the peak heat load on the divertor targets. Qualitative analysis of the divertor plasma oscillations reveals different mechanisms driving the oscillations in the cases of high- and low-Z impurity seeding. The oscillations caused by the high-Z impurities are excited near the X-point by an impurity-related instability of the radiation-condensation type, accompanied by parallel impurity ionmore » transport affected by the thermal and plasma friction forces. The driving mechanism of the oscillations induced by the low-Z impurities is related to the cross-field transport of the impurity atoms, causing alteration between the high and low plasma temperature regimes in the plasma recycling region near the divertor targets. As a result, the implications of the impurity-induced plasma oscillations for divertor operation in the next generation tokamaks are also discussed.« less

  13. Impurity-induced divertor plasma oscillations

    NASA Astrophysics Data System (ADS)

    Smirnov, R. D.; Kukushkin, A. S.; Krasheninnikov, S. I.; Pigarov, A. Yu.; Rognlien, T. D.

    2016-01-01

    Two different oscillatory plasma regimes induced by seeding the plasma with high- and low-Z impurities are found for ITER-like divertor plasmas, using computer modeling with the DUSTT/UEDGE and SOLPS4.3 plasma-impurity transport codes. The oscillations are characterized by significant variations of the impurity-radiated power and of the peak heat load on the divertor targets. Qualitative analysis of the divertor plasma oscillations reveals different mechanisms driving the oscillations in the cases of high- and low-Z impurity seeding. The oscillations caused by the high-Z impurities are excited near the X-point by an impurity-related instability of the radiation-condensation type, accompanied by parallel impurity ion transport affected by the thermal and plasma friction forces. The driving mechanism of the oscillations induced by the low-Z impurities is related to the cross-field transport of the impurity atoms, causing alteration between the high and low plasma temperature regimes in the plasma recycling region near the divertor targets. The implications of the impurity-induced plasma oscillations for divertor operation in the next generation tokamaks are also discussed.

  14. On the relation between deep level compensation, resistivity and electric field in semi-insulating CdTe:Cl radiation detectors

    NASA Astrophysics Data System (ADS)

    Cola, Adriano; Farella, Isabella; Pousset, Jeremy; Valletta, Antonio

    2016-12-01

    A compensation model for semi-insulating CdTe:Cl based on a single dominant deep level 0.725 eV above the valence band is proposed. The model is corroborated by experimental evidence: resistivity measurements as a function of temperature on bulk crystals and stationary electric field distributions in Ohmic/Schottky radiation detectors, obtained by the Pockels effect. The latter are in close agreement with the numerical solutions of transport equations when considering the deep centre concentration in the range 2 - 4 × 1012 cm-3, and a compensation ratio R = 2.1, this one being consistent with an original ambipolar analysis of resistivity. More generally, the approach elucidates the role of electrical contacts and deep levels in controlling the electric fields in devices based on compensated materials.

  15. The Effect of Hydrogen Annealing on the Impurity Content of Alumina-Forming Alloys

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    2000-01-01

    Previously, the effect of hydrogen annealing on increasing the adhesion of Al2O3 scales had been related to the effective desulfurization that occurred during this process. The simultaneous reduction of other impurities has now been re-examined for up to 20 impurity elements in the case of five different alloys (NiCrAl, FeCrAl, PWA 1480, Rene'142, and Rene'N5). Hydrogen annealing produced measurable reductions in elemental concentration for B, C, Na, Mg, P, K, Sr, or Sn in varying degrees for at least one and up to three of these alloys. No single element was reduced by hydrogen annealing for all the alloys except sulfur. In many cases spalling occurred at low levels of these other impurities, while in other cases the scales were adherent at high levels of the impurities. No impurity besides sulfur was strongly correlated with adhesion.

  16. A Multidisciplinary Investigation to Determine the Structure and Source of Dimeric Impurities in AMG 517 Drug Substance.

    PubMed

    Silva Elipe, Maria Victoria; Tan, Zhixin Jessica; Ronk, Michael; Bostick, Tracy

    2009-01-01

    In the initial scale-up batches of the experimental drug substance AMG 517, a pair of unexpected impurities was observed by HPLC. Analysis of data from initial LC-MS experiments indicated the presence of two dimer-like molecules. One impurity had an additional sulfur atom incorporated into its structure relative to the other impurity. Isolation of the impurities was performed, and further structural elucidation experiments were conducted with high-resolution LC-MS and 2D NMR. The dimeric structures were confirmed, with one of the impurities having an unexpected C-S-C linkage. Based on the synthetic route of AMG 517, it was unlikely that these impurities were generated during the last two steps of the process. Stress studies on the enriched impurities were carried out to further confirm the existence of the C-S-C linkage in the benzothiazole portion of AMG 517. Further investigation revealed that these two dimeric impurities originated from existing impurities in the AMG 517 starting material, N-acetyl benzothiazole. The characterization of these two dimeric impurities allowed for better quality control of new batches of the N-acetyl benzothiazole starting material. As a result, subsequent batches of AMG 517 contained no reportable levels of these two impurities.

  17. Building a conceptual framework to culturally adapt health promotion and prevention programs at the deep structural level.

    PubMed

    Wang-Schweig, Meme; Kviz, Frederick J; Altfeld, Susan J; Miller, Arlene M; Miller, Brenda A

    2014-07-01

    The debate on the effectiveness and merit for the amount of time, effort, and resources to culturally adapt health promotion and prevention programs continues. This may be due, in large part, to the lack of theory in commonly used methods to match programmatic content and delivery to the culture of a population, particularly at the deep structural level. This paper asserts that prior to the cultural adaptation of prevention programs, it is necessary to first develop a conceptual framework. We propose a multiphase approach to address key challenges in the science of cultural adaptation by first identifying and exploring relevant cultural factors that may affect the targeted health-related behavior prior to proceeding through steps of a stage model. The first phase involves developing an underlying conceptual framework that integrates cultural factors to ground this process. The second phase employs the different steps of a stage model. For Phase I of our approach, we offer four key steps and use our research study as an example of how these steps were applied to build a framework for the cultural adaptation of a family-based intervention to prevent adolescent alcohol use, Guiding Good Choices (GGC), to Chinese American families. We then provide a summary of the preliminary evidence from a few key relationships that were tested among our sample with the greater purpose of discussing how these findings might be used to culturally adapt GGC.

  18. Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation

    NASA Astrophysics Data System (ADS)

    Nyamhere, C.; Das, A. G. M.; Auret, F. D.; Chawanda, A.; Pineda-Vargas, C. A.; Venter, A.

    2011-08-01

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×10 13 protons/cm 2. The results show that proton irradiation resulted in primary hole traps at E V +0.15 and E V +0.30 eV and electron traps at E C -0.38, E C -0.32, E C -0.31, E C -0.22, E C -0.20, E C -0.17, E C -0.15 and E C -0.04 eV. Defects observed in this study are compared with those introduced in similar samples after MeV electron irradiation reported earlier. E C -0.31, E C -0.17 and E C -0.04, and E V +0.15 eV were not observed previously in similar samples after high energy irradiation. Results from this study suggest that although similar defects are introduced by electron and proton irradiation, traps introduced by the latter are dose dependent.

  19. Cost-effective enrichment hybridization capture of chloroplast genomes at deep multiplexing levels for population genetics and phylogeography studies.

    PubMed

    Mariac, Cédric; Scarcelli, Nora; Pouzadou, Juliette; Barnaud, Adeline; Billot, Claire; Faye, Adama; Kougbeadjo, Ayite; Maillol, Vincent; Martin, Guillaume; Sabot, François; Santoni, Sylvain; Vigouroux, Yves; Couvreur, Thomas L P

    2014-11-01

    Biodiversity, phylogeography and population genetic studies will be revolutionized by access to large data sets thanks to next-generation sequencing methods. In this study, we develop an easy and cost-effective protocol for in-solution enrichment hybridization capture of complete chloroplast genomes applicable at deep-multiplexed levels. The protocol uses cheap in-house species-specific probes developed via long-range PCR of the entire chloroplast. Barcoded libraries are constructed, and in-solution enrichment of the chloroplasts is carried out using the probes. This protocol was tested and validated on six economically important West African crop species, namely African rice, pearl millet, three African yam species and fonio. For pearl millet, we also demonstrate the effectiveness of this protocol to retrieve 95% of the sequence of the whole chloroplast on 95 multiplexed individuals in a single MiSeq run at a success rate of 95%. This new protocol allows whole chloroplast genomes to be retrieved at a modest cost and will allow unprecedented resolution for closely related species in phylogeography studies using plastomes.

  20. Deep level transient spectroscopy study of electron traps in n-type GaAs after pulsed electron beam irradiation

    SciTech Connect

    Marrakchi, G.; Barbier, D.; Guillot, G.; Nouailhat, A.

    1987-10-01

    Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high values of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.

  1. Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Kažukauskas, V.; Storasta, J.; Vaitkus, J.-V.

    1996-08-01

    The complex influence of recombination centers and potential fluctuations of the band gap on the scattering and recombination phenomena in n-type semiinsulating liquid- encapsulated-Czochralski-grown GaAs were investigated by using the transient photoconductivity and photo-Hall effects. The inhomogeneities cause a hyperbolic decrease of nonequilibrium carrier concentration and the saturation of Hall mobility, while the exponential parts of the decay appear due to the recharge of deep levels. The mean recombination barrier heights of potential fluctuations were evaluated. We propose a complex ``island'' model of scattering and recombination centers, consisting of defect clusters and their associations around dislocations, surrounded by potential barriers. At low light intensities and at the temperatures below 330 K they are insulating for majority charge carriers, thus reducing an effective crystal volume and causing percolation transport effects. At the temperature higher than 330-360 K the main barrier of the island can be recharged or screened by nonequilibrium carriers and its fine barrier structure appears as an effective scatterer, causing a sharp decrease of the nonequilibrium Hall mobility. It was demonstrated that although doping with Sb reduce dislocation density, it can intensify the effect of smaller defects on transport phenomena.

  2. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

    2016-04-01

    The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  3. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    SciTech Connect

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

    2016-04-28

    The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  4. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    DOE PAGES

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; ...

    2015-07-02

    In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capturemore » cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.« less

  5. Three-Dimensional Geologic Modeling of a Prospective Deep Underground Laboratory Site for High-Level Radioactive Waste Disposal in Korea

    NASA Astrophysics Data System (ADS)

    Park, J. Y.; Lee, S.; Park, S. U.; Kim, J. M.; Kihm, J. H.

    2014-12-01

    A series of three-dimensional geologic modeling was performed using a geostatistical geologic model GOCAD (ASGA and Paradigm) to characterize quantitatively and to visualize realistically a prospective deep underground laboratory site for high-level radioactive waste disposal in Korea. The necessity of a deep underground laboratory arises from its in-situ conditions for related deep scientific experiments. However, the construction and operation of such a deep underground laboratory take great efforts and expenses owing to its larger depth and thus higher geologic uncertainty. For these reasons, quantitative characterization and realistic visualization of geologic formations and structures of a deep underground laboratory site is crucial before its construction and operation. The study area for the prospective deep underground laboratory site is mainly consists of Precambrian metamorphic rocks as a complex. First, various topographic and geologic data of the study area were collected from literature and boreholes and preliminarily analyzed. Based on the preliminary analysis results, a three-dimensional structural model, which consists of the boundaries between the geologic formations and structures, was established, and a three-dimensional grid model, which consists of hexahedral grid blocks, was produced. Three-dimensional geologic formation model was then established by polymerizing these two models. Finally, a series of three-dimensional lithofacies modeling was performed using the sequential indicator simulation (SIS) and truncated Gaussian simulation (TGS). The volume fractions of metamorphic rocks predicted using the TGS are more similar to the actual data observed in boreholes than those predicted using the SIS. These three-dimensional geologic modeling results can improve a quantitative and realistic understanding of geologic characteristics of the prospective deep underground laboratory site for high-level radioactive waste disposal and thus can provide

  6. A biosphere modeling methodology for dose assessments of the potential Yucca Mountain deep geological high level radioactive waste repository.

    PubMed

    Watkins, B M; Smith, G M; Little, R H; Kessler, J

    1999-04-01

    Recent developments in performance standards for proposed high level radioactive waste disposal at Yucca Mountain suggest that health risk or dose rate limits will likely be part of future standards. Approaches to the development of biosphere modeling and dose assessments for Yucca Mountain have been relatively lacking in previous performance assessments due to the absence of such a requirement. This paper describes a practical methodology used to develop a biosphere model appropriate for calculating doses from use of well water by hypothetical individuals due to discharges of contaminated groundwater into a deep well. The biosphere model methodology, developed in parallel with the BIOMOVS II international study, allows a transparent recording of the decisions at each step, from the specification of the biosphere assessment context through to model development and analysis of results. A list of features, events, and processes relevant to Yucca Mountain was recorded and an interaction matrix developed to help identify relationships between them. Special consideration was given to critical/potential exposure group issues and approaches. The conceptual model of the biosphere system was then developed, based on the interaction matrix, to show how radionuclides migrate and accumulate in the biosphere media and result in potential exposure pathways. A mathematical dose assessment model was specified using the flexible AMBER software application, which allows users to construct their own compartment models. The starting point for the biosphere calculations was a unit flux of each radionuclide from the groundwater in the geosphere into the drinking water in the well. For each of the 26 radionuclides considered, the most significant exposure pathways for hypothetical individuals were identified. For 14 of the radionuclides, the primary exposure pathways were identified as consumption of various crops and animal products following assumed agricultural use of the contaminated

  7. Deep learning

    NASA Astrophysics Data System (ADS)

    Lecun, Yann; Bengio, Yoshua; Hinton, Geoffrey

    2015-05-01

    Deep learning allows computational models that are composed of multiple processing layers to learn representations of data with multiple levels of abstraction. These methods have dramatically improved the state-of-the-art in speech recognition, visual object recognition, object detection and many other domains such as drug discovery and genomics. Deep learning discovers intricate structure in large data sets by using the backpropagation algorithm to indicate how a machine should change its internal parameters that are used to compute the representation in each layer from the representation in the previous layer. Deep convolutional nets have brought about breakthroughs in processing images, video, speech and audio, whereas recurrent nets have shone light on sequential data such as text and speech.

  8. Deep learning.

    PubMed

    LeCun, Yann; Bengio, Yoshua; Hinton, Geoffrey

    2015-05-28

    Deep learning allows computational models that are composed of multiple processing layers to learn representations of data with multiple levels of abstraction. These methods have dramatically improved the state-of-the-art in speech recognition, visual object recognition, object detection and many other domains such as drug discovery and genomics. Deep learning discovers intricate structure in large data sets by using the backpropagation algorithm to indicate how a machine should change its internal parameters that are used to compute the representation in each layer from the representation in the previous layer. Deep convolutional nets have brought about breakthroughs in processing images, video, speech and audio, whereas recurrent nets have shone light on sequential data such as text and speech.

  9. Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometer

    SciTech Connect

    Li, Z.; Kraner, H.W.; Chen, W.; Beuttenmuller, R.; Biggeri, U.; Bruzzi, M.; Borchi, E.; Baldini, A.; Spillantini, P. |

    1993-04-01

    Measurements of deep level spectrum of high resistivity silicon detectors irradiated by high fluence fast neutrons ({Phi}{sub n}: 2 {times} 10{sup 12}n/cm{sup 2}) have been made using a thermally stimulated current (TSC) spectrometer. It has been found that at least nine new defect levels, with peaking temperature of 19K, 27K, 36K, 44K, 49K, 83K, 93K, 105K, and 120K, begin to appear when {Phi}{sub n} {ge} 1 {times} 10{sup 13}n/cm. All peaks have strong dependences on the filling voltage (V{sub fill}, forward bias) or injection current especially for high fluence ({Phi}{sub n} {ge} 10{sup 13} n/cm{sup 2}) situations. The defect concentration, energy level in the band gap, and cross section of each deep level, totaling, at least 13, have been studied systematically and possible identifications of the levels have been discussed.

  10. Impurity-induced moments in underdoped cuprates

    SciTech Connect

    Khaliullin, G. |; Kilian, R.; Krivenko, S.; Fulde, P.

    1997-11-01

    We examine the effect of a nonmagnetic impurity in a two-dimensional spin liquid in the spin-gap phase, employing a drone-fermion representation of spin-1/2 operators. The properties of the local moment induced in the vicinity of the impurity are investigated and an expression for the nuclear-magnetic-resonance Knight shift is derived, which we compare with experimental results. Introducing a second impurity into the spin liquid an antiferromagnetic interaction between the moments is found when the two impurities are located on different sublattices. The presence of many impurities leads to a screening of this interaction as is shown by means of a coherent-potential approximation. Further, the Kondo screening of an impurity-induced local spin by charge carriers is discussed. {copyright} {ital 1997} {ital The American Physical Society}

  11. Overview of genotoxic impurities in pharmaceutical development.

    PubMed

    Bercu, Joel P; Dobo, Krista L; Gocke, Elmar; McGovern, Timothy J

    2009-01-01

    This symposium focuses on the management of genotoxic impurities in the synthesis of pharmaceuticals. Recent developments in both Europe and United States require sponsors of new drug applications to develop processes to control the risks of potential genotoxic impurities. Genotoxic impurities represent a special case relative to the International Conference on Harmonisation Q3A/Q3B guidances, because genotoxicity tests used to qualify the drug substance may not be sufficient to demonstrate safety of a potentially genotoxic impurity. The default risk management approach for a genotoxic impurity is the threshold of toxicological concern unless a more specific risk characterization is appropriate. The symposium includes descriptions of industry examples where impurities are introduced and managed in the synthesis of a pharmaceutical. It includes recent regulatory developments such as the "staged threshold of toxicological concern" when administration is of short duration (eg, during clinical trials).

  12. Single-electron tunneling through discrete semiconductor impurity states

    NASA Astrophysics Data System (ADS)

    Deshpande, Mandar Ramesh

    With the advent of epitaxial crystal growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), and the development of microfabrication and nanoscale lithography techniques (like electron-beam lithography), the design and implementation of many new experimental systems has become possible. The realization of granular electronic systems, which exhibit single electron effects, such as low dimensional semiconductor and ultra small metallic systems, has focused attention on the basic physical properties of the discrete electronic states. In this dissertation I investigate one such system consisting of individual semiconductor impurities with discrete electronic states. These impurities are located in the quantum well regions of a semiconductor heterostructure resonant tunneling diode and their eigenstates are probed by measuring the electron tunneling current through these states. Quantum effects due to the narrow well width of these diodes change the energy and other physical properties of all the electronic states (including the impurity states) in this region. I focus on one particular physical property, the effective spin g*\\ factor, of electrons in this region and accurately determine it by studying the spin splitting of the impurity states in an applied magnetic field. An analysis of the electron tunneling current through this two state system enables the determination of the tunneling rates of the two potential barriers of the resonant tunneling diode individually. I also investigate a time dependent phenomenon observed in this tunneling system. A two level fluctuating current (random telegraph signal) associated with individual single electron tunneling channels is observed. Possible mechanisms for these fluctuations are discussed. Once the physical properties of the impurity are understood, it can be used as a probe to investigate the local properties of the semiconductor contacts. The impurity states serve as

  13. Revealing substructures of H4 and H5 hole traps in p-type InP using Laplace deep-level transient spectroscopy

    SciTech Connect

    Darwich, R.; Mani, A. A.

    2010-08-15

    New substructures of H4 and H5 hole traps have been revealed using Laplace deep-level transient spectroscopy. Our measurements show that the hole traps H4 and H5 can have at least three components for each. Moreover, the activation energies are deduced and the microscopic nature of these substructures is discussed.

  14. Deep level capture barrier in molecular beam epitaxial grown AlAsySb1 - y measured by isothermal capacitance transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Johnstone, D. K.; Yeo, Y. K.; Hengehold, R. L.; Turner, G. W.

    1997-07-01

    Improved isothermal capacitance transient spectroscopy (ICTS), which measures the entire capacitance transient as a function of time and temperature in a single temperature scan, has been implemented in a deep level trap analysis extending the characterization to include capture barrier measurement. This method eliminates inaccuracies introduced by narrow pulse widths that are difficult to reproduce accurately, providing capture barrier information more accurately and easily in addition to the usual deep level characteristics. A method of establishing ICTS experimental conditions and a method of analyzing the resulting data are described and applied to the investigation of deep levels in Te-doped AlAs0.07Sb0.93. The sample shows a single DX center trap having a deep level energy of 278 meV, a high temperature capture cross section of 1.3×10-12 cm2, and a capture barrier energy of 137 meV, clearly demonstrating the superior method of measuring a capture barrier.

  15. Anisotropic inflation from vector impurity

    SciTech Connect

    Kanno, Sugumi; Kimura, Masashi; Soda, Jiro; Yokoyama, Shuichiro E-mail: mkimura@sci.osaka-cu.ac.jp E-mail: shu@a.phys.nagoya-u.ac.jp

    2008-08-15

    We study an inflationary scenario with a vector impurity. We show that the universe undergoes anisotropic inflationary expansion due to a preferred direction determined by the vector. Using the slow roll approximation, we find a formula for determining the anisotropy of the inflationary universe. We discuss possible observable predictions of this scenario. In particular, it is stressed that primordial gravitational waves can be induced from curvature perturbations. Hence, even in low scale inflation, a sizable amount of primordial gravitational waves may be produced during inflation.

  16. Impurity study of TMX using ultraviolet spectroscopy

    SciTech Connect

    Allen, S.L.; Strand, O.T.; Moos, H.W.; Fortner, R.J.; Nash, T.J.; Dietrich, D.D.

    1981-01-31

    An extreme ultraviolet (EUV) study of the emissions from intrinsic and injected impurities in TMX is presented. Two survey spectrographs were used to determine that the major impurities present were oxygen, nitrogen, carbon, and titanium. Three absolutely-calibrated monochromators were used to measure the time histories and radial profiles of these impurity emissions in the central cell and each plug. Two of these instruments were capable of obtaining radial profiles as a function of time in a single shot.

  17. Trace organic impurities in gaseous helium

    NASA Technical Reports Server (NTRS)

    Schehl, T. A.

    1973-01-01

    A program to determine trace organic impurities present in helium has been initiated. The impurities were concentrated in a cryogenic trap to permit detection and identification by a gas chromatographic-mass spectrometric technique. Gaseous helium (GHe) exhibited 63 GC flame ionization response peaks. Relative GC peak heights and identifications of 25 major impurities by their mass spectra are given. As an aid to further investigation, identities are proposed for 16 other components, and their mass spectra are given.

  18. First-principles electronic structure and formation energies of group V and VII impurities in the α-Fe{sub 2}O{sub 3} alloys

    SciTech Connect

    Xia, Congxin; Jia, Yu; Zhang, Qiming

    2014-09-21

    Based on density functional theory, the electronic structures, formation energy, and transition level of the selected group V and VII impurities in α-Fe{sub 2}O{sub 3} are investigated by means of first-principles methods. Numerical results show that the group V and VII atoms-doped α-Fe{sub 2}O{sub 3} can be energetically favorable under the Fe-rich condition. Group V atom substituting O atom can induce the acceptor impurity level, while the deep donor impurity states are formed inside the band gap when group VII atom substitute O atom in the α-Fe{sub 2}O{sub 3}. Moreover, our results show that halogen atom F substituting O atom should be very easy in the α-Fe{sub 2}O{sub 3}. In addition, our results also show that for both group V and VII atom-doped α-Fe{sub 2}O{sub 3}, the upper sides of valence band are modified obviously, while the conduction band edge does not change.

  19. Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

    DOE PAGES

    Armstrong, Andrew M.; Allerman, Andrew A.

    2017-07-24

    AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content,more » while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. As a result, the graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants.« less

  20. Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew M.; Allerman, Andrew A.

    2017-07-01

    AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content, while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. The graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants.

  1. Terrestrial source to deep-sea sink sediment budgets at high and low sea levels: Insights from tectonically active Southern California

    USGS Publications Warehouse

    Covault, J.A.; Romans, B.W.; Graham, S.A.; Fildani, A.; Hilley, G.E.

    2011-01-01

    Sediment routing from terrestrial source areas to the deep sea influences landscapes and seascapes and supply and filling of sedimentary basins. However, a comprehensive assessment of land-to-deep-sea sediment budgets over millennia with significant climate change is lacking. We provide source to sink sediment budgets using cosmogenic radionuclide-derived terrestrial denudation rates and submarine-fan deposition rates through sea-level fluctuations since oxygen isotope stage 3 (younger than 40 ka) in tectonically active, spatially restricted sediment-routing systems of Southern California. We show that source-area denudation and deep-sea deposition are balanced during a period of generally falling and low sea level (40-13 ka), but that deep-sea deposition exceeds terrestrial denudation during the subsequent period of rising and high sea level (younger than 13 ka). This additional supply of sediment is likely owed to enhanced dispersal of sediment across the shelf caused by seacliff erosion during postglacial shoreline transgression and initiation of submarine mass wasting. During periods of both low and high sea level, land and deep-sea sediment fluxes do not show orders of magnitude imbalances that might be expected in the wake of major sea-level changes. Thus, sediment-routing processes in a globally significant class of small, tectonically active systems might be fundamentally different from those of larger systems that drain entire orogens, in which sediment storage in coastal plains and wide continental shelves can exceed millions of years. Furthermore, in such small systems, depositional changes offshore can reflect onshore changes when viewed over time scales of several thousand years to more than 10 k.y. ?? 2011 Geological Society of America.

  2. A study on the energy bands of multi-quantum wells in the quantum cascade laser structure by deep-level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Kim, Jin Soak; Kim, Eun Kyu; Han, Il Ki; Song, Jin Dong; Lee, Jung Il; Lee, Sejoon; Shon, Yoon; Kim, D. Y.

    2006-08-01

    We have investigated the defect states and confined energy levels of three quantum wells (QWs) in the quantum cascade laser (QCL) structure by capacitance-voltage and deep-level transient spectroscopy methods. Defect states with activation energies in the range of 0.49-0.88 eV were obtained in the GaAs capping layer, and their origins were considered as EL3 and EL2 families, which are well-known deep levels of GaAs materials. The densities of these defects in the GaAs capping layer of the QCL structure were about 3-12% of the donor concentration. The confined energy levels of QWs showed activation energies of about 130 meV and 230 meV from the top of the AlGaAs barrier, and their carrier confinement ability was measured to be about 0.5% of the donor concentration.

  3. Survival probability in a quenched Majorana chain with an impurity

    NASA Astrophysics Data System (ADS)

    Rajak, Atanu; Nag, Tanay

    2017-08-01

    We investigate the dynamics of a one-dimensional p -wave superconductor with next-nearest-neighbor hopping and superconducting interaction derived from a three-spin interacting Ising model in transverse field by mapping to Majorana fermions. The next-nearest-neighbor hopping term leads to a new topological phase containing two zero-energy Majorana modes at each end of an open chain, compared to a nearest-neighbor p -wave superconducting chain. We study the Majorana survival probability (MSP) of a particular Majorana edge state when the initial Hamiltonian (Hi) is changed to the quantum critical as well as off-critical final Hamiltonian (Hf), which additionally contains an impurity term (Himp) that breaks the time-reversal invariance. For the off-critical quenching inside the new topological phase with Hf=Hi+Himp , and small impurity strength (λd), we observe a perfect oscillation of the MSP as a function of time with a single frequency (determined by the impurity strength λd) that can be analyzed from an equivalent two-level problem. On the other hand, the MSP shows a beating like structure with time for quenching to the phase boundary separating the topological phase (with two edge Majoranas at each edge) and the nontopological phase where the additional frequency is given by inverse of the system size. We attribute this behavior of the MSP to the modification of the energy levels of the final Hamiltonian due to the application of the impurity term.

  4. The Mg impurity in nitride alloys

    SciTech Connect

    Zvanut, M. E.; Willoughby, W. R.; Sunay, U. R.; Koleske, D. D.; Allerman, A. A.; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

    2014-02-21

    Although several magnetic resonance studies address the Mg acceptor in GaN, there are few reports on Mg doping in the alloys, where hole production depends strongly on the Al or In content. Our electron paramagnetic resonance (EPR) measurements of the p-type alloys suggest that the Mg impurity retains the axial symmetry, characteristic of a p-type dopant in both alloys; however, In and Al produce additional, different characteristics of the acceptor. In InGaN, the behavior is consistent with a lowering of the acceptor level and increasing hole density as In concentration increases. For AlGaN, the amount of neutral Mg decreases with increasing Al content, which is attributed to different kinetics of hydrogen diffusion thought to occur in samples with higher Al mole fraction.

  5. Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects

    NASA Astrophysics Data System (ADS)

    Grinyaev, S. N.; Razzhuvalov, A. N.

    2016-10-01

    The influence of deep-level defects localized in spacer layers on the tunneling current in a w-AlN/GaN (0001) double-barrier structure is studied. It is shown that the current value essentially depends on the nature and spatial distribution of defects. New effects (screening of built-in fields, negative feedback, fixing of current peaks at high temperature) and a new mechanism of formation of resonances and tunneling current hysteresis caused by deep centers are established. The results of calculation agree with a number of experimental data on the position and temperature dependence of the current peak. It is noted that the current bistability can be caused by multicharged deep centers localized near the heteroboundaries of a double-barrier structure. Due to the defects, electric field in the barriers can reach values, at which the Poole-Frenkel effect should be taken into account.

  6. Identification and characterization of potential impurities in raloxifene hydrochloride.

    PubMed

    Reddy, Reguri Buchi; Goud, Thirumani Venkateshwar; Nagamani, Nagabushanam; Kumar, Nutakki Pavan; Alagudurai, Anandan; Murugan, Raman; Parthasarathy, Kannabiran; Karthikeyan, Vinayagam; Balaji, Perumal

    2012-01-01

    During the synthesis of the bulk drug Raloxifene hydrochloride, eight impurities were observed, four of which were found to be new. All of the impurities were detected using the gradient high performance liquid chromatographic (HPLC) method, whose area percentages ranged from 0.05 to 0.1%. LCMS was performed to identify the mass number of these impurities, and a systematic study was carried out to characterize them. These impurities were synthesized and characterized by spectral data, subjected to co-injection in HPLC, and were found to be matching with the impurities present in the sample. Based on their spectral data (IR, NMR, and Mass), these impurities were characterized as Raloxifene-N-Oxide [Impurity: 1]; EP impurity A [Impurity: 2]; EP impurity B [Impurity: 3]; Raloxifene Dimer [Impurity: 4]; HABT (6-Acetoxy-2-[4-hydroxyphenyl]-1-benzothiophene or 6-Hydroxy-2-[4-acetoxyphenyl]-1-benzothiophene) [Impurity: 5]; PEBE (Methyl[4-[2-(piperidin-1-yl)ethoxy

  7. Level of neutral buoyancy, deep convective outflow, and convective core: New perspectives based on 5 years of CloudSat data

    NASA Astrophysics Data System (ADS)

    Takahashi, Hanii; Luo, Zhengzhao Johnny; Stephens, Graeme L.

    2017-03-01

    This paper is the follow on to a previous publication by the authors, which investigated the relationship between the level of neutral buoyancy (LNB) determined from the ambient sounding and the actual outflow levels using mainly CloudSat observations. The goal of the current study is to provide a more complete characterization of LNB, deep convective outflow, and convective core, and the relationship among them, as well as the dependence on environmental parameters and convective system size. A proxy is introduced to estimate convective entrainment, namely, the difference between the LNB (based on the ambient sounding) and the actual outflow height. The principal findings are as follows: (1) Deep convection over the Warm Pool has larger entrainment rates and smaller convective cores than the counterpart over the two tropical land regions (Africa and Amazonia), lending observational support to a long-standing assumption in convection models concerning the negative relationship between the two parameters. (2) The differences in internal vertical structure of convection between the two tropical land regions and the Warm Pool suggest that deep convection over the two tropical land regions contains more intense cores. (3) Deep convective outflow occurs at a higher level when the midtroposphere is more humid and the convective system size is smaller. The convective system size dependence is postulated to be related to convective lifecycle, highlighting the importance of cloud life stage information in interpretation of snapshot measurements by satellite. Finally, implications of the study to global modeling are discussed.

  8. TOPICAL REVIEW: Impurity band Mott insulators: a new route to high Tc superconductivity

    NASA Astrophysics Data System (ADS)

    Baskaran, Ganapathy

    2008-10-01

    Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped) impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

  9. Kinetic effects on geodesic acoustic mode from combined collisions and impurities

    SciTech Connect

    Yang, Shangchuan; Xie, Jinlin Liu, Wandong

    2015-04-15

    The dispersion relation for geodesic acoustic mode (GAM) is derived by applying a gyrokinetic model that accounts for the effects from both collisions and impurities. Based on the dispersion relation, an analysis is performed for the non-monotonic behavior of GAM damping versus the characteristic collision rate at various impurity levels. As the effective charge increases, the maximum damping rate is found to shift towards lower collision rates, nearer to the parameter range of a typical tokamak edge plasma. The relative strengths of ion-ion and impurity-induced collision effects, which are illustrated by numerical calculations, are found to be comparable. Impurity-induced collisions help decrease the frequency of GAM, while their effects on the damping rate are non-monotonic, resulting in a weaker total damping in the high collision regime. The results presented suggest considering collision effects as well as impurity effects in GAM analysis.

  10. The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals

    NASA Astrophysics Data System (ADS)

    Wang, Pengfei; Nan, Ruihua; Jian, Zengyun

    2017-06-01

    The deep-level defects of CdZnTe (CZT) crystals grown by the modified vertical Bridgman (MVB) method act as trapping centers or recombination centers in the band gap, which have significant effects on its electrical properties. The resistivity and electron mobility-lifetime product of high resistivity Cd0.9Zn0.1Te wafer marked CZT1 and low resistivity Cd0.9Zn0.1Te wafer marked CZT2 were tested respectively. Their deep-level defects were identified by thermally stimulated current (TSC) spectroscopy and thermoelectric effect spectroscopy (TEES) respectively. Then the trap-related parameters were characterized by the simultaneous multiple peak analysis (SIMPA) method. The deep donor level ({E}{{DD}}) dominating dark current was calculated by the relationship between dark current and temperature. The Fermi-level was characterized by current-voltage measurements of temperature dependence. The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy. The results show the traps concentration and capture cross section of CZT1 are lower than CZT2, so its electron mobility-lifetime product is greater than CZT2. The Fermi-level of CZT1 is closer to the middle gap than CZT2. The degree of Fermi-level pinned by {E}{{DD}} of CZT1 is larger than CZT2. It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges. Project supported by the National Natural Science Foundation of China (No. 51502234) and the Scientific Research Plan Projects of Shaanxi Provincial Department of Education of China (No. 15JS040).

  11. Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

    SciTech Connect

    Simimol, A.; Manikandanath, N. T.; Chowdhury, Prasanta; Barshilia, Harish C.; Anappara, Aji A.

    2014-08-21

    Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (T{sub A} = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (V{sub O}), zinc interstitial (Zn{sub i}), and oxygen interstitial (O{sub i}) defects and these can be reduced significantly by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for T{sub A} greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for T{sub A} ≥ 450 °C in the oxygen and air environments, the density of O{sub i} defects increased, whereas, the green emission associated with V{sub O} is dominant in the vacuum annealed (T{sub A} = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications.

  12. Evolution of Activation Energy of Interface Traps in LPNP Transistors Characterized by Deep-Level Transient Spectroscopy

    NASA Astrophysics Data System (ADS)

    Li, Xingji; Yang, Jianqun; Liu, Chaoming

    2017-07-01

    The emission of charge carriers from the interface traps as a function of irradiation dose and bias voltage is investigated in terms of Poole-Frenkel effect (PFE) used by deep-level transient spectroscopy (DLTS). The electrical properties in lateral PNP (LPNP) transistors caused by Co60 gamma-ray radiation are measured in situ during irradiation, showing that the interface traps give the main contribution to the excess base current of LPNP transistors. Based on the DLTS results, with increasing irradiation dose, the density of the charged positive interface traps at a given bias voltage increases. This causes an increase in the electric-field strength in the space-charge region and a decrease in the activation energy of interface traps and an increase in the emission rate of charge carriers from the interface traps, showing a similar feature to the classical PFE. However, the charge sign of the interface traps changes from negative to positive, which is different to the classical PFE, and thus displays a new mode of PFE. In order to confirm this conclusion, various bias conditions are employed during DLTS measurements. With decreasing the reverse bias, the electric-field strength increases, leading to an obvious decrease in activation energy of the interface traps and increase in emission rate of charge carriers. Moreover, the interface traps are shown to be uniformly located at the Si/SiO2 interface, and the uniformly distributed interface traps give the new PFE mode, which is independent of the position in depletion layer.

  13. The influence of impurities on crystallization kinetics a case study on ammonium sulfate

    NASA Astrophysics Data System (ADS)

    Rauls, M.; Bartosch, K.; Kind, M.; Kuch, St.; Lacmann, R.; Mersmann, A.

    2000-05-01

    The influence of impurities on the crystallization kinetics of ammonium sulfate was investigated. MSMPR experiments were conducted with the impurities aluminum sulfate and the azo dyes amaranth and fuchsine. Nucleation and growth rates as well as mean crystal sizes were related to the supersaturation σ and-the width of the metastable zone. It was found that all impurity levels in the system reduce kinetic coefficients for crystal growth and suppress nucleation by adsorption on the crystal surfaces. An increase of supersaturation and metastable zone width compensates for this reduction at low impurity concentrations and allows the growth of larger crystals compared to the pure system. At high impurity concentrations and increasing surface coverage of the crystals, supersaturation rises faster than metastable zone width, causing an increase in nucleation rates and a higher fines content in the product compared to the pure system. A similar interdependence between impurity concentration, crystal size and supersaturation was found for other systems not reported here. The observations made can be explained in terms of adsorption equilibria of the impurities on the crystals. This seemingly general relationship allows the adjustment of crystal sizes in crystallization processes by control of impurity concentrations. A second paper will discuss the changes in crystal morphology in greater depth (Kuch et al., 2000).

  14. Harnessing intrinsic localized modes to identify impurities in nonlinear periodic systems

    NASA Astrophysics Data System (ADS)

    Thota, M.; Harne, R. L.; Wang, K. W.

    2015-02-01

    Intrinsic localized modes (ILMs) are concentrations of vibrational energy in periodic systems/lattices due to the combined influences of nonlinearity and discreteness. Moreover, ILMs can move within the system and may strongly interact with an impurity, such as a stiffness change, mass variation, etc. Numerous scientific fields have uncovered examples and evidence of ILMs, motivating a multidisciplinary pursuit to rigorously understand the underlying principles. In spite of the diverse technical studies, a characterization of ILM interaction behaviors with multiple impurities in dissipative lattices remains outstanding. The insights on such behaviors may be broadly useful when dynamic measurements are the only accessible features of the periodic system. For instance, one may guide an ILM within the lattice using a deliberately applied and steered impurity and harness the observed interaction behaviors with a second, static (immovable) impurity/defect to identify how the underlying lattice is different at the second, defected site, whether or not one knew the position of the defect a priori. In this spirit, this research studies, analyzes, and characterizes the interaction types amongst an ILM and multiple impurities, and devises a method to identify a static defect impurity using quantitatively and qualitatively distinct interaction phenomena. The method is found to be robust to moderate levels of lattice stiffness heterogeneity and is applicable to monitor various property changes that represent impurities. Finally, experimental studies verify that ILMs interact with multiple impurities in unique ways such that defect features may be effectively identified.

  15. Susceptibility measurements of impurity-helium condensates containing magnetic impurities

    NASA Astrophysics Data System (ADS)

    Paulsen, C.; Järvinen, J.; Bernard, E. P.; Khmelenko, V. V.; Lee, D. M.

    2009-02-01

    The magnetic susceptibilities of impurity-helium condensates (IHCs), containing nanocrystals of molecular oxygen and atomic nitrogen free radicals embedded in molecular N2 have been measured via a SQUID magnetometer in the temperature range between 1.1 and 2.1 K. The susceptibilities of the samples containing nitrogen atoms followed Curie-Weiss behavior with very small Weiss temperatures ranging from 0 to -0.4 K. The behavior of samples composed of O2 nanocrystals deviated sharply from results for bulk solid. The susceptibilities of the samples were 102 larger than for bulk solid O2 and showed Curie-Weiss behavior with a Weiss temperature in the range from -4.5 K to -5 K. This result is qualitatively consistent with results obtained in other laboratories for O2 confined in restricted geometries.

  16. Operation of the Oxide Washer for Water-Washing Solubles out of Impure Pu Oxide

    SciTech Connect

    Dodson, K E; Close, W L; Krikorian, O H; Summers III, H V

    2006-01-30

    An evaluation has been made for using the Oxide Washer to wash water-soluble materials out of impure Pu oxide. It is found that multiple washes are needed to reduce the water-soluble materials to very low levels in the impure Pu oxides. The removal of the wash water from the Oxide Washer is accompanied by particulates of the impure Pu oxide, which subsequently need to be filtered out. In spite of the additional filtration needed, the overall level of manpower required for processing is still only about one third of that for an all-manual operation.

  17. Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

    SciTech Connect

    Rangel-Kuoppa, Victor-Tapio; Chen Gang; Jantsch, Wolfgang

    2011-12-23

    Temperature dependent Capacitance-Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3x10{sup 11} cm{sup -2}. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 10{sup 16} cm{sup -3}, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2x10{sup 15} cm{sup -3} and 5x10{sup 15} cm{sup -3}, are also found. TCV results suggest they are related to the Ge QDs.

  18. Some logistical considerations in designing a system of deep boreholes for disposal of high-level radioactive waste.

    SciTech Connect

    Gray, Genetha Anne; Brady, Patrick Vane; Arnold, Bill Walter

    2012-09-01

    Deep boreholes could be a relatively inexpensive, safe, and rapidly deployable strategy for disposing Americas nuclear waste. To study this approach, Sandia invested in a three year LDRD project entitled %E2%80%9CRadionuclide Transport from Deep Boreholes.%E2%80%9D In the first two years, the borehole reference design and backfill analysis were completed and the supporting modeling of borehole temperature and fluid transport profiles were done. In the third year, some of the logistics of implementing a deep borehole waste disposal system were considered. This report describes what was learned in the third year of the study and draws some conclusions about the potential bottlenecks of system implementation.

  19. I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Madhu, K. V.; Kulkarni, S. R.; Ravindra, M.; Damle, R.

    A commercial bipolar junction transistor (2N 2219A, npn) irradiated with 84 MeV O6+-ions with fluence of the order of 1013 ions cm-2 is studied for radiation-induced gain degradation and deep-level defects or recombination centers. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep-level transient spectroscopy. Minority carrier trap energy levels with energies ranging from EC -0.17 eV to EC -0.55 eV are observed in the base-collector junction of the transistor. Majority carrier defect levels are also observed with energies ranging from EV +0.26 eV to EV +0.44 eV. The irradiated device is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for an increase in base current through Shockley-Read-Hall or multi-phonon recombination and consequent transistor gain degradation.

  20. Determining factors for the presence of impurities in selectively collected biowaste.

    PubMed

    Puig-Ventosa, Ignasi; Freire-González, Jaume; Jofra-Sora, Marta

    2013-05-01

    The presence of impurities in biodegradable waste (biowaste) causes problems with the management of waste, among which are additional costs derived from the need to improve pre-treatment of biowaste, loss of treatment capacity and the difficulty selling treated biowaste as compost owing to its low quality. When treated biowaste is used for soil conditioning it can also cause soil pollution. Understanding the reasons why impurities are in biowaste and the factors affecting the percentage of impurities present can be used to determine ways to minimise these negative effects. This article attempts to identify the main causes for the presence of impurities in biowaste. In order to do so, it carries out an empirical analysis of the level of impurities in biowaste from municipal waste collection in two steps. First, a bivariate analysis focuses on significant correlations between the presence of impurities and several variables. Second, the construction of an explanatory model based on the significant relations obtained in the first step, and on literature research, are used to check the stated hypothesis. The estimates demonstrate that the collection system, the global levels of separate collection, the urban density of the municipality and the requirement to use compostable bags may be the main drivers of impurity levels in biowaste.

  1. Eliminating Impurity Traps in the Silane Process

    NASA Technical Reports Server (NTRS)

    Coleman, L. M.

    1982-01-01

    Redistribution reaction section of silane process progressively separates heavier parts of chlorosilane feedstock until light silane product is available for pyrolysis. Small amount of liquid containing impurities is withdrawn from processing stages in which trapping occurs and passed to earlier processing stage in which impurities tend to be removed via chemical reactions.

  2. Role of sea-level change in deep water deposition along a carbonate shelf margin, Early and Middle Permian, Delaware Basin: implications for reservoir characterization

    NASA Astrophysics Data System (ADS)

    Li, Shunli; Yu, Xinghe; Li, Shengli; Giles, Katherine A.

    2015-04-01

    The architecture and sedimentary characteristics of deep water deposition can reflect influences of sea-level change on depositional processes on the shelf edge, slope, and basin floor. Outcrops of the northern slope and basin floor of the Delaware Basin in west Texas are progressively exposed due to canyon incision and road cutting. The outcrops in the Delaware Basin were measured to characterize gravity flow deposits in deep water of the basin. Subsurface data from the East Ford and Red Tank fields in the central and northeastern Delaware Basin were used to study reservoir architectures and properties. Depositional models of deep water gravity flows at different stages of sea-level change were constructed on the basis of outcrop and subsurface data. In the falling-stage system tracts, sandy debris with collapses of reef carbonates are deposited on the slope, and high-density turbidites on the slope toe and basin floor. In the low-stand system tracts, deep water fans that consist of mixed sand/mud facies on the basin floor are comprised of high- to low-density turbidites. In the transgression and high-stand system tracts, channel-levee systems and elongate lobes of mud-rich calciturbidite deposits formed as a result of sea level rise and scarcity of sandy sediment supply. For the reservoir architecture, the fan-like debris and high-density turbidites show high net-to-gross ratio of 62 %, which indicates the sandiest reservoirs for hydrocarbon accumulation. Lobe-like deep water fans with net-to-gross ratio of 57 % facilitate the formation of high quality sandy reservoirs. The channel-levee systems with muddy calciturbidites have low net-to-gross ratio of 30 %.

  3. Detection of innate immune response modulating impurities in therapeutic proteins.

    PubMed

    Haile, Lydia Asrat; Puig, Montserrat; Kelley-Baker, Logan; Verthelyi, Daniela

    2015-01-01

    Therapeutic proteins can contain multiple impurities, some of which are variants of the product, while others are derived from the cell substrate and the manufacturing process. Such impurities, even when present at trace levels, have the potential to activate innate immune cells in peripheral blood or embedded in tissues causing expression of cytokines and chemokines, increasing antigen uptake, facilitating processing and presentation by antigen presenting cells, and fostering product immunogenicity. Currently, while products are tested for host cell protein content, assays to control innate immune response modulating impurities (IIRMIs) in products are focused mainly on endotoxin and nucleic acids, however, depending on the cell substrate and the manufacturing process, numerous other IIRMI could be present. In these studies we assess two approaches that allow for the detection of a broader subset of IIRMIs. In the first, we use commercial cell lines transfected with Toll like receptors (TLR) to detect receptor-specific agonists. This method is sensitive to trace levels of IIRMI and provides information of the type of IIRMIs present but is limited by the availability of stably transfected cell lines and requires pre-existing knowledge of the IIRMIs likely to be present in the product. Alternatively, the use of a combination of macrophage cell lines of human and mouse origin allows for the detection of a broader spectrum of impurities, but does not identify the source of the activation. Importantly, for either system the lower limit of detection (LLOD) of impurities was similar to that of PBMC and it was not modified by the therapeutic protein tested, even in settings where the product had inherent immune modulatory properties. Together these data indicate that a cell-based assay approach could be used to screen products for the presence of IIRMIs and inform immunogenicity risk assessments, particularly in the context of comparability exercises.

  4. Controlled samples for silicon defect and impurity studies

    SciTech Connect

    Ciszek, T.F.

    1995-08-01

    Because of the diverse defects and impurities that are present in any given sample of silicon material, it can be extremely difficult to conduct a controlled experiment to study the influence of any particular defect or impurity on photovoltaic properties such as minority charge carrier lifetime {tau} or solar cell efficiency q. For example, the influence of iron may be different if boron is present, or the influence of silicon self interstitial clusters may be different if oxygen is present. It thus becomes important to conduct such studies on controlled samples where the influence of secondary effects is minimized. At NREL, over the past several years, we have focused on using the high-purity float-zone (FZ) growth method to obtain controlled samples. Because the silicon melt is not in contact with a container, and no heated components are in the growth region, very high purities and low defect levels can be achieved in baseline material. The baseline can be controllably perturbed by introduction of specific defects or impurities. The chart shown below lists some of the types of defect and impurity. combinations that can be studied in this way. The boxes marked with an {open_quotes}x{close_quotes} represent combinations we have studied to some extent.

  5. Substitutional 4d and 5d impurities in graphene.

    PubMed

    Alonso-Lanza, Tomás; Ayuela, Andrés; Aguilera-Granja, Faustino

    2016-08-21

    We describe the structural and electronic properties of graphene doped with substitutional impurities of 4d and 5d transition metals. The adsorption energies and distances for 4d and 5d metals in graphene show similar trends for the later groups in the periodic table, which are also well-known characteristics of 3d elements. However, along earlier groups the 4d impurities in graphene show very similar adsorption energies, distances and magnetic moments to the 5d ones, which can be related to the influence of the 4d and 5d lanthanide contraction. Surprisingly, within the manganese group, the total magnetic moment of 3 μB for manganese is reduced to 1 μB for technetium and rhenium. We find that compared with 3d elements, the larger size of the 4d and 5d elements causes a high degree of hybridization with the neighbouring carbon atoms, reducing spin splitting in the d levels. It seems that the magnetic adjustment of graphene could be significantly different if 4d or 5d impurities are used instead of 3d impurities.

  6. Analysis of trace impurities in organometallic semiconductor grade reagent materials using electrothermal vaporization - inductively coupled plasma spectrometry

    SciTech Connect

    Argentine, M.D.

    1993-12-31

    Trace impurity determinations in volatile, pyrophoric organometallic materials is complicated owing to its chemical nature. Furthermore, trends toward high semiconductor circuit density demand that impurity determinations are performed at increasingly low levels. Volatility of the impurities is also desired as it plays a significant role in impurity incorporation in semiconductor products. Determination of both volatile and nonvolatile impurities in semiconductor-grade organometallic reagent materials has been accomplished using electrothermal vaporization-inductively coupled plasma spectrometry. Solid or liquid materials can be dispensed directly onto a graphite microboat, and application of an appropriate time-temperature ramp allows separation of impurities based on volatility. Temporal separation allows quantitative capabilities on both volatile and nonvolatile signals in a single ETV run. Calibration efforts for volatile impurities have been compared with results from exponential dilution and direct vapor sampling techniques. Nonvolatile impurity determinations can be reasonably performed with aqueous external standard calibration. Inductively coupled plasma-mass spectrometry provides an alternate and more sensitive, multielement detection method. Several spectroscopic and non-spectroscopic difficulties with volatile impurity detection remain. Nonetheless, qualitative and semiquantitative (<50% RSD) determination of most impurities may be performed in a single ETV run.

  7. Silicon materials task of the Low-Cost Solar Array Project: Phase IV. Effects of impurities and processing on silicon solar cells. Twenty-first quarterly report, October-December 1980

    SciTech Connect

    Hopkins, R.H.; Hanes, M.H.; Davis, J.R.; Rohatgi, A.; Rai-Choudhury, P.; Mollenkopf, H.C.

    1981-01-30

    The overall objective of this program is to define the effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells. The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600/sup 0/C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after groth, preferentially segregates to grain boundaries and becomes electrically deactivated. Both Al and Au introduce deep levels when grown into silicon crystals. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty-year device lifetime. Combined electrical bias and thermal stressing of silicon solar cells containing Nb, Fe, Cu, Ti, Cr, and Ag, respectively produces no performance loss after 100 hour exposures up to 225/sup 0/C. Ti and V, but not Mo, can be gettered from polycrystalline silicon by POCl/sub 3/ or HCl at temperatures of 1000 and 1100/sup 0/C.

  8. Mg impurity in helium droplets

    NASA Astrophysics Data System (ADS)

    Navarro, J.; Mateo, D.; Barranco, M.; Sarsa, A.

    2012-02-01

    Within the diffusion Monte Carlo approach, we have determined the structure of isotopically pure and mixed helium droplets doped with one magnesium atom. For pure 4He clusters, our results confirm those of Mella et al. [J. Chem. Phys. 123, 054328 (2005), 10.1063/1.1982787] that the impurity experiences a transition from a surface to a bulk location as the number of helium atoms in the droplet increases. Contrarily, for pure 3He clusters Mg resides in the bulk of the droplet due to the smaller surface tension of this isotope. Results for mixed droplets are presented. We have also obtained the absorption spectrum of Mg around the 3s3p 1P1 ← 3s2 1S0 transition.

  9. Analytical control of process impurities in Pazopanib hydrochloride by impurity fate mapping.

    PubMed

    Li, Yan; Liu, David Q; Yang, Shawn; Sudini, Ravinder; McGuire, Michael A; Bhanushali, Dharmesh S; Kord, Alireza S

    2010-08-01

    Understanding the origin and fate of organic impurities within the manufacturing process along with a good control strategy is an integral part of the quality control of drug substance. Following the underlying principles of quality by design (QbD), a systematic approach to analytical control of process impurities by impurity fate mapping (IFM) has been developed and applied to the investigation and control of impurities in the manufacturing process of Pazopanib hydrochloride, an anticancer drug approved recently by the U.S. FDA. This approach requires an aggressive chemical and analytical search for potential impurities in the starting materials, intermediates and drug substance, and experimental studies to track their fate through the manufacturing process in order to understand the process capability for rejecting such impurities. Comprehensive IFM can provide elements of control strategies for impurities. This paper highlights the critical roles that analytical sciences play in the IFM process and impurity control. The application of various analytical techniques (HPLC, LC-MS, NMR, etc.) and development of sensitive and selective methods for impurity detection, identification, separation and quantification are highlighted with illustrative examples. As an essential part of the entire control strategy for Pazopanib hydrochloride, analytical control of impurities with 'meaningful' specifications and the 'right' analytical methods is addressed. In particular, IFM provides scientific justification that can allow for control of process impurities up-stream at the starting materials or intermediates whenever possible. Copyright (c) 2010 Elsevier B.V. All rights reserved.

  10. AUCpreD: proteome-level protein disorder prediction by AUC-maximized deep convolutional neural fields.

    PubMed

    Wang, Sheng; Ma, Jianzhu; Xu, Jinbo

    2016-09-01

    Protein intrinsically disordered regions (IDRs) play an important role in many biological processes. Two key properties of IDRs are (i) the occurrence is proteome-wide and (ii) the ratio of disordered residues is about 6%, which makes it challenging to accurately predict IDRs. Most IDR prediction methods use sequence profile to improve accuracy, which prevents its application to proteome-wide prediction since it is time-consuming to generate sequence profiles. On the other hand, the methods without using sequence profile fare much worse than using sequence profile. This article formulates IDR prediction as a sequence labeling problem and employs a new machine learning method called Deep Convolutional Neural Fields (DeepCNF) to solve it. DeepCNF is an integration of deep convolutional neural networks (DCNN) and conditional random fields (CRF); it can model not only complex sequence-structure relationship in a hierarchical manner, but also correlation among adjacent residues. To deal with highly imbalanced order/disorder ratio, instead of training DeepCNF by widely used maximum-likelihood, we develop a novel approach to train it by maximizing area under the ROC curve (AUC), which is an unbiased measure for class-imbalanced data. Our experimental results show that our IDR prediction method AUCpreD outperforms existing popular disorder predictors. More importantly, AUCpreD works very well even without sequence profile, comparing favorably to or even outperforming many methods using sequence profile. Therefore, our method works for proteome-wide disorder prediction while yielding similar or better accuracy than the others. http://raptorx2.uchicago.edu/StructurePropertyPred/predict/ wangsheng@uchicago.edu, jinboxu@gmail.com Supplementary data are available at Bioinformatics online. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com.

  11. Pressure dependence of the E 2 and E 1 deep levels in GaAs, GaP, and their alloys

    SciTech Connect

    Samara, G.A.; Biefeld, R.M.; Dawson, L.R.; Zipperian, T.E.; Barnes, C.E. )

    1991-03-15

    Measurements of the effects of pressure on the thermal-electron emission rate and capture cross section for the {ital E}2 and {ital E}1 deep levels in GaAs, GaP, and their alloys have yielded the pressure dependences of the energies of these levels, allowed evaluation of the breathing-mode lattice relaxations accompanying carrier emission or capture by these levels, and revealed trends that lead to new insights. The results are consistent with a model which associates {ital E}2 with the ({minus}/0) and {ital E}1 with the (2{minus}/{minus}) charge states of the As (or P) vacancy.

  12. Tunneling spectroscopy of a phosphorus impurity atom on the Ge(111)-(2 × 1) surface

    SciTech Connect

    Savinov, S. V.; Oreshkin, A. I. E-mail: oreshkin@spmlab.ru; Oreshkin, S. I.; Haesendonck, C. van

    2015-06-15

    We numerically model the Ge(111)-(2 × 1) surface electronic properties in the vicinity of a P donor impurity atom located near the surface. We find a notable increase in the surface local density of states (LDOS) around the surface dopant near the bottom of the empty surface state band π*, which we call a split state due to its limited spatial extent and energetic position inside the band gap. We show that despite the well-established bulk donor impurity energy level position at the very bottom of the conduction band, a surface donor impurity on the Ge(111)-(2 × 1) surface might produce an energy level below the Fermi energy, depending on the impurity atom local environment. It is demonstrated that the impurity located in subsurface atomic layers is visible in a scanning tunneling microscope (STM) experiment on the Ge(111)-(2 × 1) surface. The quasi-1D character of the impurity image, observed in STM experiments, is confirmed by our computer simulations with a note that a few π-bonded dimer rows may be affected by the presence of the impurity atom. We elaborate a model that allows classifying atoms on the experimental low-temperature STM image. We show the presence of spatial oscillations of the LDOS by the density-functional theory method.

  13. EFFECT OF IMPURITIES ON THE PERFORMANCE OF A Pd-Ag DIFFUSER

    SciTech Connect

    Morgan, G.

    2010-12-16

    A commercially fabricated diffuser purchased from Johnson-Matthey, Inc. was evaluated for performance characterization testing at the Savannah River National Laboratory (SRNL). Different impurities are often present in the feed streams of the process diffusers, but the effect of these impurities on the diffuser performance is currently unknown. Various impurities were introduced into the feed stream of the diffuser at various levels ranging from 0.5% to 10% of the total flow in order to determine the effect that these impurities have on the permeation of hydrogen through the palladium-silver membrane. The introduction of various impurities into the feed stream of the diffuser had a minimal effect on the overall permeation of hydrogen through the Pd-Ag membrane. Of the four impurities introduced into the feed stream, carbon monoxide (CO) was the only impurity that showed any evidence of causing a reduction in the amount of hydrogen permeating through the Pd-Ag membrane. The hydrogen permeation returned to its baseline level after the CO was removed from the feed stream. There were no lasting effects of the CO exposure on the ability of the membrane to effectively separate hydrogen from the non-hydrogen species in the gas stream under the conditions tested.

  14. Defect properties of Sb- and Bi-doped CuInSe{sub 2}: The effect of the deep lone-pair s states

    SciTech Connect

    Park, Ji-Sang; Yang, Ji-Hui; Ramanathan, Kannan; Wei, Su-Huai

    2014-12-15

    Bi or Sb doping has been used to make better material properties of polycrystalline Cu{sub 2}(In,Ga)Se{sub 2} as solar cell absorbers, including the experimentally observed improved electrical properties. However, the mechanism is still not clear. Using first-principles method, we investigate the stability and electronic structure of Bi- and Sb-related defects in CuInSe{sub 2} and study their effects on the doping efficiency. Contrary to previous thinking that Bi or Sb substituted on the anion site, we find that under anion-rich conditions, the impurities can substitute on cation sites and are isovalent to In because of the formation of the impurity lone pair s states. When the impurities substitute for Cu, the defects act as shallow double donors and help remove the deep In{sub Cu} level, thus resulting in the improved carrier life time. On the other hand, under anion-poor conditions, impurities at the Se site create amphoteric deep levels that are detrimental to the device performance.

  15. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

    NASA Astrophysics Data System (ADS)

    Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

    2017-10-01

    Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

  16. Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au /GaN Schottky contacts

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Xu, S. J.; Shi, S. L.; Beling, C. D.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, X. M.

    2006-10-01

    Under identical preparation conditions, Au /GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers.

  17. Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Barbagiovanni, E. G.; Reitano, R.; Franzò, G.; Strano, V.; Terrasi, A.; Mirabella, S.

    2015-12-01

    Visible luminescence from ZnO nanorods (NRs) is attracting large scientific interest for light emission and sensing applications. We study visible luminescent defects in ZnO NRs as a function of post growth thermal treatments, and find four distinct visible deep level defect states (VDLSs): blue (2.52 eV), green (2.23 eV), orange (2.03 eV), and red (1.92 eV). Photoluminescence (PL) studies reveal a distinct modification in the UV (3.25 eV) emission intensity and a shift in the visible spectra after annealing. Annealing at 600 °C in Ar (Ar600) and O2 (O600) causes a blue and red-shift in the visible emission band, respectively. All samples demonstrate orange emission from the core of the NR, with an additional surface related green, blue, and red emission in the As-Prep, Ar600, and O600 samples, respectively. From PL excitation (PLE) measurements we determine the onset energy for population of the various VDLSs, and relate it to the presence of an Urbach tail below the conduction band due to a presence of ionized Zni or Zni complexes. We measured an onset energy of 3.25 eV for the as prepared sample. The onset energy red-shifts in the annealed samples by about 0.05 to 0.1 eV indicating a change in the defect structure, which we relate to the shift in the visible emission. We then used X-ray photoemission spectroscopy (XPS), and elastic recoil detection analysis (ERDA) to understand changes in the surface structure, and H content, respectively. The results of the XPS and ERDA analysis explain how the chemical states are modified due to annealing. We summarize our results by correlating our VDLSs with specific intrinsic defect states to build a model for PL emission in ZnO NRs. These results are important for understanding how to control defect related visible emission for sensing and electroluminescence applications.Visible luminescence from ZnO nanorods (NRs) is attracting large scientific interest for light emission and sensing applications. We study visible

  18. Metal concentrations and metallothionein-like protein levels in deep-sea fishes captured near hydrothermal vents in the Mid-Atlantic Ridge off Azores

    NASA Astrophysics Data System (ADS)

    Company, R.; Felícia, H.; Serafim, A.; Almeida, A. J.; Biscoito, M.; Bebianno, M. J.

    2010-07-01

    The knowledge of metal contamination in deep-sea fishes living in the surroundings of hydrothermal vents is very scarce, along with the detoxification mechanisms that allow them to live near one of the most metal contaminated marine environments. Six deep-sea fish species, although not vent endemic were collected near three Mid-Atlantic Ridge (MAR) hydrothermal vents (Menez Gwen, Lucky Strike and Rainbow) and the gills, muscle and liver were selected for this study due to their importance in metal metabolism and storage. The concentrations of seven metals (Ag, Cd, Cr, Cu, Fe, Mn, and Ni) and a metal-related biomarker (metallothionein-like proteins-MTL) were assessed. Major differences in metal accumulation among fish species are related to their feeding habits and vent site of their capture. The liver and gills are in general the most important tissues for metal accumulation compared to the muscle, but tissue partitioning is very dependent on the fish species considered. Compared to other deep-sea fishes, fish capture in the vicinity of hydrothermal vents accumulates higher amounts of metals in general. However, MTL levels are not considerably different from what is found in commercial coastal fishes, and is poorly correlated with metal concentrations in the tissues. Therefore, MTL may not constitute one major detoxification system for deep-sea species living in the vicinity of three important MAR vent sites.

  19. Kinetics of local "magnetic" moment and non-stationary spin-polarized current in the single impurity Anderson-model

    NASA Astrophysics Data System (ADS)

    Maslova, N. S.; Mantsevich, V. N.; Arseyev, P. I.

    2017-02-01

    We perform theoretical investigation of the localized state dynamics in the presence of interaction with the reservoir and Coulomb correlations. We analyze kinetic equations for electron occupation numbers with different spins taking into account high order correlation functions for the localized electrons. We reveal that in the stationary state electron occupation numbers with the opposite spins always have the same value - the stationary state is a "paramagnetic" one. "Magnetic" properties can appear only in the non-stationary characteristics of the single-impurity Anderson model and in the dynamics of the localized electrons second order correlation functions. We found, that for deep energy levels and strong Coulomb correlations, relaxation time for initial "magnetic" state can be several orders larger than for "paramagnetic" one. So, long-living "magnetic" moment can exist in the system. We also found non-stationary spin polarized currents flowing in opposite directions for the different spins in the particular time interval.

  20. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Alnoor, Hatim; Chey, Chan Oeurn; Pozina, Galia; Liu, Xianjie; Khranovskyy, Volodymyr; Willander, Magnus; Nur, Omer

    2015-08-01

    Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  1. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    SciTech Connect

    Alnoor, Hatim Chey, Chan Oeurn; Pozina, Galia; Willander, Magnus; Nur, Omer; Liu, Xianjie; Khranovskyy, Volodymyr

    2015-08-15

    Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  2. Method and apparatus for detecting and measuring trace impurities in flowing gases

    DOEpatents

    Taylor, Gene W.; Dowdy, Edward J.

    1979-01-01

    Trace impurities in flowing gases may be detected and measured by a dynamic atomic molecular emission spectrograph utilizing as its energy source the energy transfer reactions of metastable species, atomic or molecular, with the impurities in the flowing gas. An electronically metastable species which maintains a stable afterglow is formed and mixed with the flowing gas in a region downstream from and separate from the region in which the metastable species is formed. Impurity levels are determined quantitatively by the measurement of line and/or band intensity as a function of concentration employing emission spectroscopic techniques.

  3. The beauty of impurities: Two revivals of Friedel's virtual bound-state concept

    NASA Astrophysics Data System (ADS)

    Georges, Antoine

    2016-03-01

    Jacques Friedel pioneered the theoretical study of impurities and magnetic impurities in metals. He discovered Friedel oscillations, introduced the concept of virtual bound-state, and demonstrated that the charge on the impurity is related to the scattering phase-shift at the Fermi level (Friedel sum-rule). After a brief review of some of these concepts, I describe how they proved useful in two new contexts. The first one concerns the Coulomb blockade in quantum dots, and its suppression by the Kondo effect. The second one is the dynamical mean-field theory of strong electronic correlations.

  4. Direct Visualization of an Impurity Depletion Zone

    NASA Technical Reports Server (NTRS)

    Chernov, Alex A.; Garcia-Ruiz, Juan Ma; Thomas, Bill R.

    2000-01-01

    When a crystal incorporates more impurity per unit of its volume than the impurity concentration in solution, the solution in vicinity of the growing crystal is depleted with respect to the impurity I,2. With a stagnant solution, e. g. in microgravity or gels, an impurity depletion zone expands as the crystal grows and results in greater purity in most of the outer portion of the crystal than in the core. Crystallization in gel provides an opportunity to mimic microgravity conditions and visualize the impurity depletion zone. Colorless, transparent apoferritin (M congruent to 450 KDa) crystals were grown in the presence of red holoferritin dimer as a microheterogeneous impurity (M congruent to 900 KDa) within agarose gel by counterdiffusion with Cd(2+) precipitant. Preferential trapping of dimers, (distribution coefficient K = 4 (exp 1,2)) results in weaker red color around the crystals grown in the left tube in the figure as compared to the control middle tube without crystals. The left and the middle tubes contain colored ferritin dimers, the right tube contains colored trimers. The meniscus in the left tube separate gel (below) and liquid solution containing Cd(2+) (above). Similar solutions, though without precipitants, were present on top of the middle and right tube allowing diffusion of dimers and trimers. The area of weaker color intensity around crystals directly demonstrates overlapped impurity depletion zones.

  5. Paramagnetic Attraction of Impurity-Helium Solids

    NASA Technical Reports Server (NTRS)

    Bernard, E. P.; Boltnev, R. E.; Khmelenko, V. V.; Lee, D. M.

    2003-01-01

    Impurity-helium solids are formed when a mixture of impurity and helium gases enters a volume of superfluid helium. Typical choices of impurity gas are hydrogen deuteride, deuterium, nitrogen, neon and argon, or a mixture of these. These solids consist of individual impurity atoms and molecules as well as clusters of impurity atoms and molecules covered with layers of solidified helium. The clusters have an imperfect crystalline structure and diameters ranging up to 90 angstroms, depending somewhat on the choice of impurity. Immediately following formation the clusters aggregate into loosely connected porous solids that are submerged in and completely permeated by the liquid helium. Im-He solids are extremely effective at stabilizing high concentrations of free radicals, which can be introduced by applying a high power RF dis- charge to the impurity gas mixture just before it strikes the super fluid helium. Average concentrations of 10(exp 19) nitrogen atoms/cc and 5 x 10(exp 18) deuterium atoms/cc can be achieved this way. It shows a typical sample formed from a mixture of atomic and molecular hydrogen and deuterium. It shows typical sample formed from atomic and molecular nitrogen. Much of the stability of Im-He solids is attributed to their very large surface area to volume ratio and their permeation by super fluid helium. Heat resulting from a chance meeting and recombination of free radicals is quickly dissipated by the super fluid helium instead of thermally promoting the diffusion of other nearby free radicals.

  6. Segregation Coefficients of Impurities in Selenium by Zone Refining

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1998-01-01

    The purification of Se by zone refining process was studied. The impurity solute levels along the length of a zone-refined Se sample were measured by spark source mass spectrographic analysis. By comparing the experimental concentration levels with theoretical curves the segregation coefficient, defined as the ratio of equilibrium concentration of a given solute in the solid to that in the liquid, k = x(sub s)/x(sub l) for most of the impurities in Se are found to be close to unity, i.e., between 0.85 and 1.15, with the k value for Si, Zn, Fe, Na and Al greater than 1 and that for S, Cl, Ca, P, As, Mn and Cr less than 1. This implies that a large number of passes is needed for the successful implementation of zone refining in the purification of Se.

  7. Strain-level genomic variation in natural populations of Lebetimonas from an erupting deep-sea volcano

    PubMed Central

    Meyer, Julie L; Huber, Julie A

    2014-01-01

    Chemolithoautotrophic Epsilonproteobacteria are ubiquitous in sulfidic, oxygen-poor habitats, including hydrothermal vents, marine oxygen minimum zones, marine sediments and sulfidic caves and have a significant role in cycling carbon, hydrogen, nitrogen and sulfur in these environments. The isolation of diverse strains of Epsilonproteobacteria and the sequencing of their genomes have revealed that this group has the metabolic potential to occupy a wide range of niches, particularly at dynamic deep-sea hydrothermal vents. We expand on this body of work by examining the population genomics of six strains of Lebetimonas, a vent-endemic, thermophilic, hydrogen-oxidizing Epsilonproteobacterium, from a single seamount in the Mariana Arc. Using Lebetimonas as a model for anaerobic, moderately thermophilic organisms in the warm, anoxic subseafloor environment, we show that genomic content is highly conserved and that recombination is limited between closely related strains. The Lebetimonas genomes are shaped by mobile genetic elements and gene loss as well as the acquisition of novel functional genes by horizontal gene transfer, which provide the potential for adaptation and microbial speciation in the deep sea. In addition, these Lebetimonas genomes contain two operons of nitrogenase genes with different evolutionary origins. Lebetimonas expressed nifH during growth with nitrogen gas as the sole nitrogen source, thus providing the first evidence of nitrogen fixation in any Epsilonproteobacteria from deep-sea hydrothermal vents. In this study, we provide a comparative overview of the genomic potential within the Nautiliaceae as well as among more distantly related hydrothermal vent Epsilonproteobacteria to broaden our understanding of microbial adaptation and diversity in the deep sea. PMID:24257443

  8. Major phylum-level differences between porefluid and host rock bacterial communities in the terrestrial deep subsurface.

    PubMed

    Momper, Lily; Kiel Reese, Brandi; Zinke, Laura; Wanger, Greg; Osburn, Magdalena R; Moser, Duane; Amend, Jan P

    2017-07-05

    Earth's deep subsurface biosphere (DSB) is home to a vast number and wide variety of microorganisms. Although difficult to access and sample, deep subsurface environments have been probed through drilling programs, exploration of mines and sampling of deeply sourced vents and springs. In an effort to understand the ecology of deep terrestrial habitats, we examined bacterial diversity in the Sanford Underground Research Facility (SURF), the former Homestake gold mine, in South Dakota, USA. Whole genomic DNA was extracted from deeply circulating groundwater and corresponding host rock (at a depth of 1.45 km below ground surface). Pyrotag DNA sequencing of the 16S rRNA gene revealed diverse communities of putative chemolithoautotrophs, aerobic and anaerobic heterotrophs, numerous candidate phyla and unique rock-associated microbial assemblage. There was a clear and near-total separation of communities between SURF deeply circulating fracture fluids and SURF host-rocks. Sequencing data from SURF compared against five similarly sequenced terrestrial subsurface sites in Europe and North America revealed classes Clostridia and Betaproteobacteria were dominant in terrestrial fluids. This study presents a unique analysis showing differences in terrestrial subsurface microbial communities between fracture fluids and host rock through which those fluids permeate. © 2017 Society for Applied Microbiology and John Wiley & Sons Ltd.

  9. An introduction to blocked impurity band detectors

    NASA Technical Reports Server (NTRS)

    Geist, Jon

    1988-01-01

    Blocked impurity band detectors fabricated using standard silicon technologies offer the possibility of combining high sensitivity and high accuracy in a single detector operating in a low background environment. The solid state photomultiplier described by Petroff et al., which is a new type of blocked impurity band detector, offers even higher sensitivity as well as operation in the visible spectral region. The principle of operation and possible application of blocked impurity band detectors for stellar seismology and the search for extra-solar planets are described.

  10. Elemental impurity analysis of mercuric iodide by ICP/MS

    SciTech Connect

    Cross, E.S.; Mroz, E.; Olivares, J.A.

    1993-06-01

    A method has been developed to analyze mercuric iodide (HgI{sub 2}) for elemental contamination using Inductively Coupled Plasma/Mass Spectroscopy (ICP/MS). This paper will discuss the ICP/MS method, the effectiveness of purification schemes for removing impurities from HgI{sub 2}, as well as preliminary correlations between HgI{sub 2} detector performance and elemental contamination levels.

  11. Elemental impurity analysis of mercuric iodide by ICP/MS

    SciTech Connect

    Cross, E.S. . Santa Barbara Operations); Mroz, E.; Olivares, J.A. )

    1993-01-01

    A method has been developed to analyze mercuric iodide (HgI[sub 2]) for elemental contamination using Inductively Coupled Plasma/Mass Spectroscopy (ICP/MS). This paper will discuss the ICP/MS method, the effectiveness of purification schemes for removing impurities from HgI[sub 2], as well as preliminary correlations between HgI[sub 2] detector performance and elemental contamination levels.

  12. Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers

    NASA Astrophysics Data System (ADS)

    Gelczuk, Ł.; Dąbrowska-Szata, M.; Sochacki, M.; Szmidt, J.

    2014-04-01

    Conventional deep level transient spectroscopy (DLTS) technique was used to study deep electron traps in 4H-SiC Junction Barrier Schottky (JBS) rectifiers. 4H-SiC epitaxial layers, doped with nitrogen and grown on standard n+-4H-SiC substrates were exposed to low-dose aluminum ion implantation process under the Schottky contact in order to form both JBS grid and junction termination extension (JTE), and assure good rectifying properties of the diodes. Several deep electron traps were revealed and attributed to impurities or intrinsic defects in 4H-SiC epitaxial layers, on the basis of comparison of their electrical parameters (i.e. activation energies, apparent capture cross sections and concentrations) with previously published results.

  13. Charge, quantum state, and energy distributions of impurities released in plasma-wall interaction processes

    SciTech Connect

    Gruen, D.M.

    1981-01-01

    Conventional wisdom has it that total sputtering yields correlate with high Z-impurity levels found in fusion plasmas. The charge, quantum states and energy distributions of sputtered atoms have been virtually ignored in these considerations. Impurity transport from the wall or limiter to the plasma is, however, strongly influenced by these factors which may play a crucial role in determining impurity levels in the deeper plasma regions. Preliminary calculations have shown that positively charged impurities would most likely be redeposited on their surfaces of origin. The conditions leading to charged or excited state atoms emission and the energy distributions of such species are reviewed. Techniques for measuring these quantities are discussed and the need for a wider data base in this field is pointed out.

  14. Deep levels in a-plane, high Mg-content Mg{sub x}Zn{sub 1-x}O epitaxial layers grown by molecular beam epitaxy

    SciTech Connect

    Guer, Emre; Tabares, G.; Hierro, A.; Chauveau, J. M.

    2012-12-15

    Deep level defects in n-type unintentionally doped a-plane Mg{sub x}Zn{sub 1-x}O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg{sub x}Zn{sub 1-x}O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E{sub c} - 1.4 eV, 2.1 eV, 2.6 V, and E{sub v} + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E{sub c} - 2.1 eV, E{sub v} + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E{sub v} + 0.3 eV and E{sub c} - 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E{sub v} + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E{sub c} - 1.4 eV and E{sub c} - 2.6 eV levels in Mg alloyed samples.

  15. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    SciTech Connect

    Zhang, Z.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

    2015-01-12

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 10{sup 13 }cm{sup −2} and 3 × 10{sup 13 }cm{sup −2} fluences not only introduces a trap with an E{sub V} + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at E{sub V} + 0.48 eV, E{sub V} + 2.42 eV, E{sub V} + 3.00 eV, and E{sub V} + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  16. Identification, control strategies, and analytical approaches for the determination of potential genotoxic impurities in pharmaceuticals: a comprehensive review.

    PubMed

    Reddy, Ambavaram Vijaya Bhaskar; Jaafar, Jafariah; Umar, Khalid; Majid, Zaiton Abdul; Aris, Azmi Bin; Talib, Juhaizah; Madhavi, Gajulapalle

    2015-03-01

    Potential genotoxic impurities in pharmaceuticals at trace levels are of increasing concern to both pharmaceutical industries and regulatory agencies due to their possibility for human carcinogenesis. Molecular functional groups that render starting materials and synthetic intermediates as reactive building blocks for small molecules may also be responsible for their genotoxicity. Determination of these genotoxic impurities at trace levels requires highly sensitive and selective analytical methodologies, which poses tremendous challenges on analytical communities in pharmaceutical research and development. Experimental guidance for the analytical determination of some important classes of genotoxic impurities is still unavailable in the literature. Therefore, the present review explores the structural alerts of commonly encountered potential genotoxic impurities, draft guidance of various regulatory authorities in order to control the level of impurities in drug substances and to assess their toxicity. This review also describes the analytical considerations for the determination of potential genotoxic impurities at trace levels and finally few case studies are also discussed for the determination of some important classes of potential genotoxic impurities. It is the authors' intention to provide a complete strategy that helps analytical scientists for the analysis of such potential genotoxic impurities in pharmaceuticals. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Numerical Studies of Impurities in Fusion Plasmas

    DOE R&D Accomplishments Database

    Hulse, R. A.

    1982-09-01

    The coupled partial differential equations used to describe the behavior of impurity ions in magnetically confined controlled fusion plasmas require numerical solution for cases of practical interest. Computer codes developed for impurity modeling at the Princeton Plasma Physics Laboratory are used as examples of the types of codes employed for this purpose. These codes solve for the impurity ionization state densities and associated radiation rates using atomic physics appropriate for these low-density, high-temperature plasmas. The simpler codes solve local equations in zero spatial dimensions while more complex cases require codes which explicitly include transport of the impurity ions simultaneously with the atomic processes of ionization and recombination. Typical applications are discussed and computational results are presented for selected cases of interest.

  18. Influence of magnetic shear on impurity transport

    SciTech Connect

    Nordman, H.; Fueloep, T.; Candy, J.; Strand, P.; Weiland, J.

    2007-05-15

    The magnetic shear dependence of impurity transport in tokamaks is studied using a quasilinear fluid model for ion temperature gradient (ITG) and trapped electron (TE) mode driven turbulence in the collisionless limit and the results are compared with nonlinear gyrokinetic results using GYRO [J. Candy and R. E. Waltz, J. Comput. Phys 186, 545 (2003)]. It is shown that the impurity transport is sensitive to the magnetic shear, in particular for weak, negative, and large positive shear where a strong reduction of the effective impurity diffusivity is obtained. The fluid and gyrokinetic results are in qualitative agreement, with the gyrokinetic diffusivities typically a factor 2 larger than the fluid diffusivities. The steady state impurity profiles in source-free plasmas are found to be considerably less peaked than the electron density profiles for moderate shear. Comparisons between anomalous and neoclassical transport predictions are performed for ITER-like profiles [R. Aymar, P. Barabaschi, and Y. Shimomura, Plasma Phys. Controlled Fusion 44, 519 (2002)].

  19. Models for impurity effects in tokamaks

    SciTech Connect

    Hogan, J.T.

    1980-03-01

    Models for impurity effects in tokamaks are described with an emphasis on the relationship between attainment of high ..beta.. and impurity problems. We briefly describe the status of attempts to employ neutral beam heating to achieve high ..beta.. in tokamaks and propose a qualitative model for the mechanism by which heavy metal impurities may be produced in the startup phase of the discharge. We then describe paradoxes in impurity diffusion theory and discuss possible resolutions in terms of the effects of large-scale islands and sawtooth oscillations. Finally, we examine the prospects for the Zakharov-Shafranov catastrophe (long time scale disintegration of FCT equilibria) in the context of present and near-term experimental capability.

  20. Impurities and electronic localization in graphene bilayers

    NASA Astrophysics Data System (ADS)

    Ojeda Collado, H. P.; Usaj, Gonzalo; Balseiro, C. A.

    2015-01-01

    We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe nonmagnetic impurities as a single orbital hybridized with carbon's pz states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system, the field-induced gap is partially filled by strongly localized impurity states. Interestingly, the structure, distribution, and localization length of these states depend on the field polarization.