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Sample records for deep impurity levels

  1. The origin of deep-level impurity transitions in hexagonal boron nitride

    SciTech Connect

    Du, X. Z.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2015-01-12

    Deep ultraviolet photoluminescence (PL) emission spectroscopy has been employed to investigate the origin of the widely observed deep level impurity related donor-acceptor pair (DAP) transition with an emission peak near 4.1 eV in hexagonal boron nitride (h-BN). A set of h-BN epilayers were grown by metal-organic chemical vapor deposition (MOCVD) under different ammonia (NH{sub 3}) flow rates to explore the role of nitrogen vacancies (V{sub N}) in the deep-level transitions. The emission intensity of the DAP transition near 4.1 eV was found to decrease exponentially with an increase of the NH{sub 3} flow rate employed during the MOCVD growth, implying that impurities involved are V{sub N}. The temperature-dependent PL spectra were measured from 10 K up to 800 K, which provided activation energies of ∼0.1 eV for the shallow impurity. Based on the measured energy level of the shallow impurity (∼0.1 eV) and previously estimated bandgap value of about 6.5 eV for h-BN, we deduce a value of ∼2.3 eV for the deep impurity involved in this DAP transition. The measured energy levels together with calculation results and formation energies of the impurities and defects in h-BN suggest that V{sub N} and carbon impurities occupying the nitrogen sites, respectively, are the most probable shallow donor and deep acceptor impurities involved in this DAP transition.

  2. Ab initio calculations of non-radiative carrier trapping due to deep impurity levels

    NASA Astrophysics Data System (ADS)

    Wang, Lin-Wang; Shi, Lin

    2013-03-01

    Non-radiative carrier decay due to deep impurity levels in semiconductors is an important process which affects the efficiencies of devices from solar cells to light emitting diode. This process is due to multiple phonon emission. Despite of the fact the analytical formalisms have been derived long time ago, so far there is no direct ab initio calculations due to the high cost of calculating all the electron-phonon coupling constants. Here we introduce an algorithm which calculates all the electron-phonon coupling constants at once, hence allows the ab initio calculations of such processes. Another approximation is introduced to calculate the phonon modes of a given impurity system. We use a ZnGa-VN paired defect in GaN as an example to study this process. We found that while most of the promoting phonon modes (used to promote the transition with the electron-phonon coupling) come from the optical modes, the accepting phonon modes (used to satisfy the energy conservation) come mostly from the acoustic phonons. This work is supported by SC/BES/MSED of the U.S. Department of Energy (DOE) under Contract No. DE-AC02-05CH11231, and by the National High Technology Research and Development Program of China (863 Program) (No. 2011AA03A103)

  3. Deep levels in semiconductors

    NASA Astrophysics Data System (ADS)

    Watkins, George D.

    1983-03-01

    The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction with the lattice vacancy, into which the impurity is placed. This interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy.

  4. Energy levels of isoelectronic impurities by large scale LDA calculations

    SciTech Connect

    Li, Jingbo; Wang, Lin-Wang

    2002-11-22

    Isoelectronic impurity states are localized states induced by stoichiometric single atom substitution in bulk semiconductor. Photoluminescence spectra indicate deep impurity levels of 0.5 to 0.9eV above the top of valence band for systems like: GaN:As, GaN:P, CdS:Te, ZnS:Te. Previous calculations based on small supercells seemingly confirmed these experimental results. However, the current ab initio calculations based on thousand atom supercells indicate that the impurity levels of the above systems are actually much shallower(0.04 to 0.23 eV), and these impurity levels should be compared with photoluminescence excitation spectra, not photoluminescence spectra.

  5. Deep impurity trapping concepts for power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1982-01-01

    High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

  6. Double-injection, deep-impurity switch development

    NASA Technical Reports Server (NTRS)

    Whitson, D. W.

    1985-01-01

    The overall objective of this program was the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI) sup 2 silicon switch that operates in the 2-10 kV range with conduction current values of 5 A at 2 kV and 1 A at 10 kV. Other major specifications include a holding voltage of 10 V with no gate current, 10 microsec switching time, and power dissipation of 50 W at 75 C. It was decided to concentrate on the lateral circular devices in order to optimize the gold diffusion. This resulted in devices that are much better switches (approx.1 micro sec switching time), and in a gold diffusion process that is much more controllable than those previously developed. Some results with injection-gated devices were also obtained. The current conduction for V less than VT was analyzed and seen to agree, for the most part, with Lampert's theory. Various sections of this report describe the device designs, wafer-processing techniques, and various measurements which include ac and dc characteristics and four-point probe.

  7. Advanced development of double-injection, deep-impurity semiconductor switches

    NASA Technical Reports Server (NTRS)

    Hanes, M. H.

    1987-01-01

    Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

  8. Level Anticrossing of Impurity States in Semiconductor Nanocrystals

    PubMed Central

    Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Turkov, Vadim K.; Ponomareva, Irina O.; Leonov, Mikhail Yu.; Perova, Tatiana S.; Berwick, Kevin; Baranov, Alexander V.; Fedorov, Anatoly V.

    2014-01-01

    The size dependence of the quantized energies of elementary excitations is an essential feature of quantum nanostructures, underlying most of their applications in science and technology. Here we report on a fundamental property of impurity states in semiconductor nanocrystals that appears to have been overlooked—the anticrossing of energy levels exhibiting different size dependencies. We show that this property is inherent to the energy spectra of charge carriers whose spatial motion is simultaneously affected by the Coulomb potential of the impurity ion and the confining potential of the nanocrystal. The coupling of impurity states, which leads to the anticrossing, can be induced by interactions with elementary excitations residing inside the nanocrystal or an external electromagnetic field. We formulate physical conditions that allow a straightforward interpretation of level anticrossings in the nanocrystal energy spectrum and an accurate estimation of the states' coupling strength. PMID:25369911

  9. Scandium resonant impurity level in PbTe

    SciTech Connect

    Skipetrov, E. P. Skipetrova, L. A.; Knotko, A. V.; Slynko, E. I.; Slynko, V. E.

    2014-04-07

    We synthesize a scandium-doped PbTe single-crystal ingot and investigate the phase and the elemental composition as well as galvanomagnetic properties of Pb{sub 1-y}Sc{sub y}Te alloys in weak magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) upon varying the scandium content (y ≤ 0.02). We find that all investigated samples are single-phase and n-type. The distribution of scandium impurities along the axis of the ingot is estimated to be exponential. An increase of scandium impurity content leads to a monotonous growth of the free electron concentration by four orders of magnitude (approximately from 10{sup 16} cm{sup −3} to 10{sup 20} cm{sup −3}). In heavily doped alloys (y > 0.01), the free electron concentration at the liquid-helium temperature tends to saturation, indicating the pinning of the Fermi energy by the scandium resonant impurity level located on the background of the conduction band. Using the two-band Kane and six-band Dimmock dispersion relations for IV-VI semiconductors, dependences of the Fermi energy measured from the bottom of the conduction band E{sub c} on the scandium impurity content are calculated and the energy of the resonant scandium level is estimated to be E{sub Sc} ≈ E{sub c} + 280 meV. Diagrams of electronic structure rearrangement of Pb{sub 1-y}Sc{sub y}Te alloys upon doping are proposed.

  10. Impurity levels and power loading in the PDX tokamak with high power neutral beam injection

    SciTech Connect

    Fonck, R.J.; Bell, M.; Bol, K.

    1982-10-01

    The PDX tokamak provides an experimental facility for the direct comparison of various impurity control techniques under reactor-like conditions. Four neutral beam lines can inject up to 6 MW for 300 ms. Carbon rail limiter discharges have been used to test the effectiveness of perpendicular injection, but non-disruptive full power operation for > 100 ms is difficult without extensive conditioning. Initial tests of a toroidal bumper limiter indicate reduced power loading and roughly similar impurity levels compared to the carbon rail limiter discharges. Poloidal divertor discharges with up to 5 MW of injected power are cleaner than similar circular discharges, and the power is deposited in a remote divertor chamber. High density divertor operation indicates a reduction of impurity flow velocity in the divertor and enhanced recycling in the divertor region during neutral injection.

  11. Impurity levels and power loading in the pdx tokamak with high power neutral beam injection

    NASA Astrophysics Data System (ADS)

    Fonck, R. J.; Bell, M.; Bol, K.; Brau, K.; Budny, R.; Cecchi, J. L.; Cohen, S.; Davis, S.; Dylla, H. F.; Goldston, R.; Grek, B.; Hawryluk, R. J.; Hirschberg, J.; Johnson, D.; Hülse, R.; Kaita, R.; Kaye, S.; Knize, R. J.; Kugel, H.; Manos, D.; Mansfield, D.; Mcguire, K.; Mueller, D.; Oasa, K.; Okabayashi, M.; Owens, D. K.; Ramette, J.; Reeves, R.; Reusch, M.; Schmidt, G.; sesnic, S.; Suckewer, S.; Takahashi, H.; Tenney, F.; Thomas, P.; Ulrickson, M.; Yelle, R.

    1982-12-01

    The PDX tokamak provides an experimental facility for the direct comparison of various impurity control techniques under reactor-like conditions. Four neutral beam lines inject > 6 MW for 300 ms. Carbon rail limiter discharges have been used to test the effectiveness of perpendicular injection, but non-disruptive full power operation for > 100 ms is difficult without extensive conditioning. Initial tests of a toroidal bumper limiter indicate reduced power loading and roughly similar impurity levels compared to the carbon rail limiter discharges. Poloidal divertor discharges with up to 5 MW of injected power are cleaner than similar circular discharges, and the power is deposited in a remote divertor chamber. High density divertor operation indicates a reduction of impurity flow velocity in the divertor and enhanced recycling in the divertor region during neutral injection.

  12. Cryogenic Laser Calorimetry for Impurity Analysis

    NASA Technical Reports Server (NTRS)

    Swimm, R. T.

    1985-01-01

    The results of a one-year effort to determine the applicability of laser-calorimetric spectroscopy to the study of deep-level impurities in silicon are presented. Critical considerations for impurity analysis by laser-calorimetric spectroscopy are discussed, the design and performance of a cryogenic laser calorimeter is described, and measurements of background absorption in high-purity silicon are presented.

  13. Trace levels of innate immune response modulating impurities (IIRMIs) synergize to break tolerance to therapeutic proteins.

    PubMed

    Verthelyi, Daniela; Wang, Vivian

    2010-12-22

    Therapeutic proteins such as monoclonal antibodies, replacement enzymes and toxins have significantly improved the therapeutic options for multiple diseases, including cancer and inflammatory diseases as well as enzyme deficiencies and inborn errors of metabolism. However, immune responses to these products are frequent and can seriously impact their safety and efficacy. Of the many factors that can impact protein immunogenicity, this study focuses on the role of innate immune response modulating impurities (IIRMIs) that could be present despite product purification and whether these impurities can synergize to facilitate an immunogenic response to therapeutic proteins. Using lipopolysaccharide (LPS) and CpG ODN as IIRMIs we showed that trace levels of these impurities synergized to induce IgM, IFNγ, TNFα and IL-6 expression. In vivo, trace levels of these impurities synergized to increase antigen-specific IgG antibodies to ovalbumin. Further, whereas mice treated with human erythropoietin showed a transient increase in hematocrit, those that received human erythropoietin containing low levels of IIRMIs had reduced response to erythropoietin after the 1(st) dose and developed long-lasting anemia following subsequent doses. This suggests that the presence of IIRMIs facilitated a breach in tolerance to the endogenous mouse erythropoietin. Overall, these studies indicate that the risk of enhancing immunogenicity should be considered when establishing acceptance limits of IIRMIs for therapeutic proteins.

  14. Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Dobaczewski, L.; Nielsen, K. Bonde; Kolkovsky, V.; Larsen, A. Nylandsted; Weber, J.

    2009-12-01

    The behaviour of hydrogen in crystalline semiconductors has attracted considerable interest during several decades. Due to its high diffusion rate and ability to react with a wide variety of lattice imperfections such as intrinsic point defects, impurities, interfaces and surfaces, hydrogen is an impurity of fundamental importance in semiconductor materials. It has been already evidenced in previous investigations that the most fundamental hydrogen-related defects in-group IV semiconductors are interstitial hydrogen atoms occupying the bond-centre site ( BC) or the interstitial tetrahedral site ( T). Using first-principles calculations Van de Walle predicted similar properties of isolated hydrogen in other II-VI and III-V semiconductors. Another interesting prediction shown in that work was the existence of a universal alignment for the hydrogen electronic (-/+) level. Until now there is no direct experimental information regarding the individual isolated hydrogen states in compound semiconductors and most reported properties have been inferred indirectly. In the present work in-situ conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques are used to analyse hydrogen-related levels after low-temperature proton implantation in different II-VI and III-V semiconductors including GaAs, ZnO and CdTe. From these experimental observations the donor level of isolated hydrogen is found to keep almost a constant value in the absolute energy scale taking into account different band-offsets calculated for the whole group of semiconductors.

  15. Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Campbell, R. B.; Blais, P. D.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

    1980-01-01

    Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

  16. New method for studying steady states in quantum impurity problems: the interacting resonant level model.

    PubMed

    Doyon, Benjamin

    2007-08-17

    We develop a new perturbative method for studying any steady states of quantum impurities, in or out of equilibrium. We show that steady-state averages are completely fixed by basic properties of the steady-state (Hershfield's) density matrix along with dynamical "impurity conditions." This gives the full perturbative expansion without Feynman diagrams (matrix products instead are used), and "resums" into an equilibrium average that may lend itself to numerical procedures. We calculate the universal current in the interacting resonant level model (IRLM) at finite bias V to first order in Coulomb repulsion U for all V and temperatures. We find that the bias, like the temperature, cuts off low-energy processes. In the IRLM, this implies a power-law decay of the current at large V (also recently observed by Boulat and Saleur at some finite value of U).

  17. Modeling the effect of deep impurity ionization on GaAs photoconductive switches

    SciTech Connect

    Yee, J.H.; Khanaka, G.H.; Druce, R.L.; Pocha, M.D.

    1992-01-01

    The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the Lock-On'' phenomena could occur in the device.

  18. Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

    NASA Astrophysics Data System (ADS)

    Barseghyan, M. G.

    2016-11-01

    The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

  19. Deep level transient spectroscopy in resistive layers

    SciTech Connect

    Hunt, C.E.; Ng, Kim . Dept. of Electrical and Computer Engineering)

    1989-06-01

    This work investigates the application of the Deep Level Transient Spectroscopy (DLTS) technique to resistive semiconductor thin films, such as Silicon-On-Insulator (SOI) and thin layer of GaAs formed on semi-insulating material. Schottky diodes made on these materials were used in this study. The effect of the series resistance inherent in these types of thin-film test structures on the interpretation of data obtained from the measurement apparatus is discussed. It is observed that inverted DLTS signals occur in these structures because of the high series resistance. It is shown that ignoring this effect can lead to erroneous values of the activation energy and the density of traps. 2 refs.

  20. Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

    SciTech Connect

    Ahrenkiel, R. K.; Johnston, S. W.

    1998-10-16

    Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.

  1. First principle prediction of shallow defect level binding energies and deep level nonradiative recombination rates

    NASA Astrophysics Data System (ADS)

    Wang, Linwang

    2014-03-01

    Accurate calculation of defect level energies in semiconductors and their carrier capturing rate is an important issue in ab initio prediction of semiconductor properties. In this talk, I will present our result work in ab initio shallow level calculation and deep level caused nonradiative recombination rate calculation. In the shallow acceptor level calculation, a large system up to 64,000 atoms needs to be used to properly describe the weakly bounded hole wave functions. The single particle Hamiltonian of that system is patched from bulk potential and central potential. Furthermore, GW calculation is used to correct the one site potential of the impurity atom. The resulting binding energy agrees excellently with the experiments within 10 meV. To calculate the nonradiative decay rate, the electron-phonon coupling constants in the defect system are calculated all at once using a new variational algorithm. Multiphonon process formalism is used to calculate the nonradiative decay rate. It is found that the transition is induced by the electron and the optical phonon coupling, but the energy conservation is mostly satisfied by the acoustic phonons. The new algorithm allows fast calculation of such nonradiative decay rate for any defect levels, as well as other multiphonon processes in nanostructures. This work was supported by the Director, Office of Science (SC), Basic Energy Science (BES)/Materials Science and Engineering Division (MSED) of the U.S. Department of Energy (DOE) under the contract No. DE-AC02-05CH11231.

  2. Photoluminescence of Single-Walled Carbon Nanotubes: The Role of Stokes Shift and Impurity Levels

    NASA Astrophysics Data System (ADS)

    Mu, Jinglin; Ma, Yuchen; Yin, Huabing; Liu, Chengbu; Rohlfing, Michael

    2013-09-01

    Recent experiments have indicated that dopants and defects can trigger new redshifted photoluminescence (PL) peaks below the E11 peak in single-walled carbon nanotubes (SWCNTs). To understand the origin of the new PL peaks, we study theoretically the excited-state properties of SWCNTs with some typical dopants and defects by ab initio many-body perturbation theory. Our calculations demonstrate that the Stokes shift in doped centers can be as large as 170 meV, which is much larger than that of intact SWCNTs and must be taken into account. We find dipole-allowed transitions from localized midgap and shallow impurity levels, which can give rise to pronounced PL peaks. Dark excitons, on the other hand, seem to have oscillator strengths that are too small to account for the new PL peaks.

  3. The role of d levels of substitutional magnetic impurities at the (110) GaAs surface

    NASA Astrophysics Data System (ADS)

    Mahani, M. R.; Pertsova, Anna; Islam, Fhokrul; Canali, C. M.

    2013-03-01

    The study of the spin of individual transition-metal dopants in a semiconductor host is an emergent field known as magnetic solotronics, bearing exciting prospects for novel spintronics devices at the atomic scale. Advances in different STM based techniques allowed experimentalists to investigate substitutional dopants at a semiconductor surface with unprecedented accuracy and degree of details. Theoretical studies based both on microscopic tight-binding (TB) models and DFT techniques have contributed in elucidating the experimental findings. In particular, for the case of Mn dopants on the (110) GaAs surface, TB models have provided a quantitative description of the properties of the associated acceptor states. Most of these TB calculations ignore dealing explicitly with the Mn d-levels and treat the associated magnetic moment as a classical vector. However recent STM experiments involving other TM impurities, such as Fe, reveal topographic features that might be related to electronic transitions within the d-level shell of the dopant. In this work we have included explicitly the d levels in the Hamiltonian. The parameters of the model have been extracted from DFT calculations. We have investigated the role that d levels play on the properties of the acceptor states of the doped GaAs(110) surface, and analyzed their implications for STM spectroscopy.

  4. Quantitation of a low level coeluting impurity present in a modified oligonucleotide by both LC-MS and NMR.

    PubMed

    Smith, Marco; Beck, Tony

    2016-01-25

    This paper describes the use of two complementary techniques, LC-MS and NMR, to quantify a low level mono phosphate substituted impurity in an oligonucleotide drug substance. This impurity is the result of a sulphurisation failure, leading to the production of a sequence where a phosphorothioate linkage is replaced by a phosphate. Few quantitative methods are possible to analyse these challenging molecules especially if reversed phase ion pair chromatography, one of the most commonly used techniques for the separation of oligonucleotides, is unable to resolve the impurity in question. With the use of a standard addition method it could be demonstrated that both analytical techniques show equivalency and furthermore, the LC-MS method alone with additional validation has the potential to perform this quantitative assay with a high degree of accuracy. PMID:26512997

  5. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  6. Identification of the deep level defects in AlN single crystals by electron paramagnetic resonance

    NASA Astrophysics Data System (ADS)

    Soltamov, V. A.; Ilyin, I. V.; Soltamova, A. A.; Mokhov, E. N.; Baranov, P. G.

    2010-06-01

    Electron paramagnetic resonance (EPR) at 9.4 and 35 GHz were studied on two types of AlN single crystals, grown by a sublimation sandwich method. These investigations revealed the presence of transition metals impurities in the first sample: Fe2+ (S =2) and some paramagnetic centers with S =3/2, we suggest Cr3+ or Ni3+ as the possible candidates. The EPR spectra of Fe2+ were observed up to the room temperature. After sample illumination at 5 K with light (wavelength shorter 700 nm) strong EPR signal with a g factor of shallow donors (SDs) and slightly anisotropic linewidth appears. This light-induced EPR signal, once excited at low temperature, still persists after switching off the light and is about constant up to 30 K then it drops quickly. SDs show a negative correlation energy U and oxygen in the N position (ON) is the most probable model. EPR spectra of deep-donor center which was assumed to be the nitrogen vacancy VN have been observed in the second sample. The x-ray irradiation leads to considerable enhancement of deep donor's (VN) signals intensity. The annealing resulted in recombination thermoluminescence and the deep donor (VN) energy level was estimated to be about 0.5 eV. The models of shallow (ON) and deep (VN) donor centers were supported by comprehensive hyperfine structure analysis.

  7. Impurity gettering

    SciTech Connect

    Picraux, S.T.

    1995-06-01

    Transition metal impurities are well known to cause detrimental effects when present in the active regions of Si devices. Their presence degrades minority carrier lifetime, provides recombination-generation centers, increases junction leakage current and reduces gate oxide integrity. Thus, gettering processes are used to reduce the available metal impurities from the active region of microelectronic circuits. Gettering processes are usually divided into intrinsic (or internal) and extrinsic (or external) categories. Intrinsic refers to processing the Si wafer in a way to make available internal gettering sites, whereas extrinsic implies externally introduced gettering sites. Special concerns have been raised for intrinsic gettering. Not only will the formation of the precipitated oxide and denuded zone be difficult to achieve with the lower thermal budgets, but another inherent limit may set in. In this or any process which relies on the precipitation of metal silicides the impurity concentration can only be reduced as low as the solid solubility limit. However, the solubilities of transition metals relative to silicide formation are typically found to be {approx_gt}10{sup 12}/cm{sup 3} at temperatures of 800 C and above, and thus inadequate to getter to the needed concentration levels. It is thus anticipated that future microelectronic device processing will require one or more of the following advances in gettering technology: (1) new and more effective gettering mechanisms; (2) quantitative models of gettering to allow process optimization at low process thermal budgets and metal impurity concentrations, and/or (3) development of front side gettering methods to allow for more efficient gettering close to device regions. These trend-driven needs provide a driving force for qualitatively new approaches to gettering and provide possible new opportunities for the use of ion implantation in microelectronics processing.

  8. Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes

    NASA Astrophysics Data System (ADS)

    Hierro, A.; Kwon, D.; Ringel, S. A.; Hansen, M.; Speck, J. S.; Mishra, U. K.; DenBaars, S. P.

    2000-05-01

    N-Schottky and p+-n GaN junctions are currently used for different technologies. A comparison of the deep levels found throughout the entire band gap of n-GaN grown by metal-organic chemical vapor deposition under both configurations is presented. Both deep level optical spectroscopy and deep level transient spectroscopy measurements are used allowing the observation of both majority and minority carrier traps. Deep levels at Ec-Et=0.58-0.62, 1.35, 2.57-2.64, and 3.22 eV are observed for both diode configurations, with concentrations in the ˜1014-1016cm-3 range. The 0.58-0.62 eV level appears correlated with residual Mg impurities in the n side of the p+-n diode measured by secondary-ion-mass spectroscopy, while the 1.35 eV level concentration increases by a factor of ˜4 for the Schottky junction possibly correlating with the carbon profile. The 2.57-2.64 eV level is a minority carrier hole trap in n-GaN, likely related to the yellow photoluminescence band, and is detected both optically from the conduction band (2.64 eV) and thermally from the valence band (0.87 eV).

  9. Large impurity effects in rubrene crystals: First-principles calculations

    SciTech Connect

    Tsetseris, L.; Pantelides, Sokrates T.

    2008-01-01

    Carrier mobilities of rubrene films are among the highest values reported for any organic semiconductor. Here, we probe with first-principles calculations the sensitivity of rubrene crystals on impurities. We find that isolated oxygen impurities create distinct peaks in the electronic density of states consistent with observations of defect levels in rubrene and that increased O content changes the position and shape of rubrene energy bands significantly. We also establish a dual role of hydrogen as individual H species and H impurity pairs create and annihilate deep carrier traps, respectively. The results are relevant to the performance and reliability of rubrene-based devices.

  10. Deep borehole disposal of high-level radioactive waste.

    SciTech Connect

    Stein, Joshua S.; Freeze, Geoffrey A.; Brady, Patrick Vane; Swift, Peter N.; Rechard, Robert Paul; Arnold, Bill Walter; Kanney, Joseph F.; Bauer, Stephen J.

    2009-07-01

    Preliminary evaluation of deep borehole disposal of high-level radioactive waste and spent nuclear fuel indicates the potential for excellent long-term safety performance at costs competitive with mined repositories. Significant fluid flow through basement rock is prevented, in part, by low permeabilities, poorly connected transport pathways, and overburden self-sealing. Deep fluids also resist vertical movement because they are density stratified. Thermal hydrologic calculations estimate the thermal pulse from emplaced waste to be small (less than 20 C at 10 meters from the borehole, for less than a few hundred years), and to result in maximum total vertical fluid movement of {approx}100 m. Reducing conditions will sharply limit solubilities of most dose-critical radionuclides at depth, and high ionic strengths of deep fluids will prevent colloidal transport. For the bounding analysis of this report, waste is envisioned to be emplaced as fuel assemblies stacked inside drill casing that are lowered, and emplaced using off-the-shelf oilfield and geothermal drilling techniques, into the lower 1-2 km portion of a vertical borehole {approx}45 cm in diameter and 3-5 km deep, followed by borehole sealing. Deep borehole disposal of radioactive waste in the United States would require modifications to the Nuclear Waste Policy Act and to applicable regulatory standards for long-term performance set by the US Environmental Protection Agency (40 CFR part 191) and US Nuclear Regulatory Commission (10 CFR part 60). The performance analysis described here is based on the assumption that long-term standards for deep borehole disposal would be identical in the key regards to those prescribed for existing repositories (40 CFR part 197 and 10 CFR part 63).

  11. Study of deep level defects of n+-CdS/p-CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Kharangarh, Poonam Rani

    Among various photovoltaic materials, polycrystalline cadmium telluride thin film is now the most promising material, due to its low production cost excellent stability and reliability. Current-voltage and capacitance-voltage measurements of CdTe photovoltaic devices at different temperatures can provide valuable information about non-idealities in the n-p semiconductor junction. There are certain limitations which limit the efficiency of CdTe solar cells. There is no real distinction between defects and impurities in CdTe solar cells as both act as beneficial dopants or detrimental traps unlike Si where intentional shallow dopants and traps are distinctly different. Therefore, the role of defect states on CdTe solar cell performance, the effect of processing on defect states, and simple and effective characterization techniques must be investigated and identified. In this research the thin film n+-CdS/p-CdTe solar cells made with evaporated Cu as a primary back contact, are characterized by using the temperature dependence of the reverse bias diode current (J-V-T) to determine the energy levels of deep defects. The results of the J-V-T measurements on solar cells made at NJIT show that while modest amounts of Cu enhance cell performance, an excessive high temperature annealing step degrades device quality and reduces efficiency. This work addresses the error that can be introduced during defect energy level estimation if the temperature dependence of the carrier capture cross-section is neglected. Therefore, the location of traps is derived using a Shockley-Read-Hall recombination model with modified assumptions. A Cu-related deep level defect with activation energy of 0.57eV is observed for Cu evaporated back contact cells and an intrinsic defect with activation energy 0.89eV is found. Frequency dispersion in Capacitance-Voltage measurements confirms the presence of Cu-related deep level traps for cells with a Cu evaporated back contact, whereas no such defects

  12. Gallium arsenide deep-level optical emitter for fibre optics.

    PubMed

    Pan, Janet L; McManis, Joseph E; Osadchy, Thomas; Grober, Louise; Woodall, Jerry M; Kindlmann, Peter J

    2003-06-01

    Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaAs bandgap wavelength (0.85 microm) is far too short for fibre optics at 1.3-1.5 microm. This has led to work on materials that have a large lattice mismatch on GaAs. Here we demonstrate the first light-emitting diode (LED) that emits at 1.5 microm fibre-optic wavelengths in GaAs using optical transitions from arsenic antisite (As(Ga)) deep levels. This is an enabling technology for fibre-optic components that are lattice-matched to GaAs integrated circuits. We present experimental results showing significant internal optical power (24 mW) and speed (in terahertz) from GaAs optical emitters using deep-level transitions. Finally, we present theory showing the ultimate limit to the efficiency-bandwidth product of semiconductor deep-level optical emitters.

  13. Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band.

    PubMed

    Dobrowolska, M; Tivakornsasithorn, K; Liu, X; Furdyna, J K; Berciu, M; Yu, K M; Walukiewicz, W

    2012-02-19

    The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature T(C). It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. Here we combine results of channelling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines T(C) through determining the degree of hole localization. This finding differs drastically from the often accepted view that T(C) is controlled by valence band holes, thus opening new avenues for achieving higher values of T(C).

  14. Energy levels of GaAs/AlxGa1-xAs/AlAs spherical quantum dot with an impurity

    NASA Astrophysics Data System (ADS)

    Boz, Figen Karaca; Nisanci, Beyza; Aktas, Saban; Okan, S. Erol

    2016-11-01

    We have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/AlxGa1-xAs/AlAs. The numerical method used is the fourth-order Runge-Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of AlxGa1-xAs spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/AlxGa1-xAs/AlAs quantum dot.

  15. Interstitial iron impurities at cores of dissociated dislocations in silicon

    NASA Astrophysics Data System (ADS)

    Ziebarth, Benedikt; Mrovec, Matous; Elsässer, Christian; Gumbsch, Peter

    2015-11-01

    Dislocations play an important role in semiconductor devices made of crystalline silicon (Si). They are known to be strongly performance-limiting defects in solar cell applications, since they act as preferred segregation sites for metallic impurities. In this work we investigate the segregation of iron (Fe) to the cores of the 30° and 90° partial dislocations in Si using atomistic calculations based on first-principles density functional theory. Our simulations show that interstitial Fe impurities segregate readily to all investigated cores and the driving force for the segregation increases with impurity concentration. Moreover, our analysis of the electronic structure reveals the existence of deep defect levels within the band gap that can be related to experimental observations by deep-level transient spectroscopy.

  16. Hybrid functional calculations of Copper impurities and related complexes in Silicon

    NASA Astrophysics Data System (ADS)

    Sharan, Abhishek; Gui, Zhigang; Janotti, Anderson

    Copper impurities affect electronic and optical properties of semiconductors. Cu is an ubiquitous impurity and can be introduced unintentionally during various processing step. In silicon, the fast-diffusing interstitial Cu donor often passivates shallow-acceptor dopants, affecting the electronic characteristics of devices, while deep levels associated with other forms of the Cu impurity degrade device performance. Here we revisit the problem of the Cu impurity in Si using first principles calculation based on a hybrid functional. We discuss the relative stability of the substitutional and interstitial forms, as well as the formation of complexes with hydrogen and oxygen impurities. The results of our calculations will be compared with recent experiments on the electrical activity of Cu impurities in Si.

  17. Human-level control through deep reinforcement learning.

    PubMed

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-26

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks

  18. Human-level control through deep reinforcement learning

    NASA Astrophysics Data System (ADS)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A.; Veness, Joel; Bellemare, Marc G.; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K.; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-01

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  19. Human-level control through deep reinforcement learning.

    PubMed

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-26

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  20. A first-principles core-level XPS study on the boron impurities in germanium crystal

    SciTech Connect

    Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji

    2013-12-04

    We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

  1. Deep levels and radiation effects in p-InP

    NASA Technical Reports Server (NTRS)

    Anderson, W. A.; Singh, A.; Jiao, K.; Lee, B.

    1989-01-01

    A survey was conducted on past studies of hole traps in InP. An experiment was designed to evaluate hole traps in Zn-doped InP after fabrication, after electron irradiation and after annealing using deep level transient spectroscopy. Data similar to that of Yamaguchi was seen with observation of both radiation-induced hole and electron traps at E sub A=0.45 eV and 0.03 eV, respectively. Both traps are altered by annealing. It is also shown that trap parameters for surface-barrier devices are influenced by many factors such as bias voltage, which probes traps at different depths below the surface. These devices require great care in data evaluation.

  2. Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Duc, Tran Thien; Pozina, Galia; Amano, Hiroshi; Monemar, Bo; Janzén, Erik; Hemmingsson, Carl

    2016-07-01

    Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition (MOCVD), undoped GaN grown by MOCVD, and halide vapor phase epitaxy (HVPE)-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy on Schottky diodes. One hole trap, labeled HT1, was detected in the Mg-doped sample. It is observed that the hole emission rate of the trap is enhanced by increasing electric field. By fitting four different theoretical models for field-assisted carrier emission processes, the three-dimensional Coulombic Poole-Frenkel (PF) effect, three-dimensional square well PF effect, phonon-assisted tunneling, and one-dimensional Coulombic PF effect including phonon-assisted tunneling, it is found that the one-dimensional Coulombic PF model, including phonon-assisted tunneling, is consistent with the experimental data. Since the trap exhibits the PF effect, we suggest it is acceptorlike. From the theoretical model, the zero field ionization energy of the trap and an estimate of the hole capture cross section have been determined. Depending on whether the charge state is -1 or -2 after hole emission, the zero field activation energy Ei 0 is 0.57 eV or 0.60 eV, respectively, and the hole capture cross section σp is 1.3 ×10-15c m2 or 1.6 ×10-16c m2 , respectively. Since the level was not observed in undoped GaN, it is suggested that the trap is associated with an Mg related defect.

  3. Development of RP UPLC-TOF/MS, stability indicating method for omeprazole and its related substances by applying two level factorial design; and identification and synthesis of non-pharmacopoeial impurities.

    PubMed

    Jadhav, Sushant Bhimrao; Kumar, C Kiran; Bandichhor, Rakeshwar; Bhosale, P N

    2016-01-25

    A new UPLC-TOF/MS compatible, reverse phase-stability indicating method was developed for determination of Omeprazole (OMP) and its related substances in pharmaceutical dosage forms by implementing Design of Experiment (DoE) i.e. two level full factorial Design (2(3)+3 center points=11 experiments) to understand the Critical Method Parameters (CMP) and its relation with Critical Method Attribute (CMA); to ensure robustness of the method. The separation of eleven specified impurities including conversion product of OMP related compound F (13) and G (14) i.e. Impurity-I (1), OMP related compound-I (11) and OMP 4-chloro analog (12) was achieved in a single method on Acquity BEH shield RP18 100 × 2.1 mm, 1.7 μm column, with inlet filter (0.2 μm) using gradient elution and detector wavelength at 305 nm and validated in accordance with ICH guidelines and found to be accurate, precise, reproducible, robust and specific. The drug was found to degrade extensively in heat, humidity and acidic conditions and forms unknown degradation products during stability studies. The same method was used for LC-MS analysis to identify m/z and fragmentation of maximum unknown impurities (Non-Pharmacopoeial) i.e. Impurity-I (1), Impurity-III (3), Impurity-V (5) and Impurity-VIII (9) formed during stability studies. Based on the results, degradation pathway for the drug has been proposed and synthesis of identified impurities i.e. impurities (Impurity-I (1), Impurity-III (3), Impurity-V (5) and Impurity-VIII (9)) are discussed in detail to ensure in-depth understanding of OMP and its related impurities and optimum performance during lifetime of the product. PMID:26600119

  4. Development of RP UPLC-TOF/MS, stability indicating method for omeprazole and its related substances by applying two level factorial design; and identification and synthesis of non-pharmacopoeial impurities.

    PubMed

    Jadhav, Sushant Bhimrao; Kumar, C Kiran; Bandichhor, Rakeshwar; Bhosale, P N

    2016-01-25

    A new UPLC-TOF/MS compatible, reverse phase-stability indicating method was developed for determination of Omeprazole (OMP) and its related substances in pharmaceutical dosage forms by implementing Design of Experiment (DoE) i.e. two level full factorial Design (2(3)+3 center points=11 experiments) to understand the Critical Method Parameters (CMP) and its relation with Critical Method Attribute (CMA); to ensure robustness of the method. The separation of eleven specified impurities including conversion product of OMP related compound F (13) and G (14) i.e. Impurity-I (1), OMP related compound-I (11) and OMP 4-chloro analog (12) was achieved in a single method on Acquity BEH shield RP18 100 × 2.1 mm, 1.7 μm column, with inlet filter (0.2 μm) using gradient elution and detector wavelength at 305 nm and validated in accordance with ICH guidelines and found to be accurate, precise, reproducible, robust and specific. The drug was found to degrade extensively in heat, humidity and acidic conditions and forms unknown degradation products during stability studies. The same method was used for LC-MS analysis to identify m/z and fragmentation of maximum unknown impurities (Non-Pharmacopoeial) i.e. Impurity-I (1), Impurity-III (3), Impurity-V (5) and Impurity-VIII (9) formed during stability studies. Based on the results, degradation pathway for the drug has been proposed and synthesis of identified impurities i.e. impurities (Impurity-I (1), Impurity-III (3), Impurity-V (5) and Impurity-VIII (9)) are discussed in detail to ensure in-depth understanding of OMP and its related impurities and optimum performance during lifetime of the product.

  5. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    SciTech Connect

    Iwamoto, Naoya Azarov, Alexander; Svensson, Bengt G.; Ohshima, Takeshi; Moe, Anne Marie M.

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  6. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Iwamoto, Naoya; Azarov, Alexander; Ohshima, Takeshi; Moe, Anne Marie M.; Svensson, Bengt G.

    2015-07-01

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 1015 cm-3 range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ˜1014 cm-3). Schottky barrier diodes fabricated on substrates annealed at 1400-1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  7. Observation of ultralow-level Al impurities on a silicon surface by high-resolution grazing emission x-ray fluorescence excited by synchrotron radiation

    SciTech Connect

    Kubala-Kukus, A.; Banas, D.; Pajek, M.; Cao, W.; Dousse, J.-Cl.; Hoszowska, J.; Kayser, Y.; Szlachetko, M.; Salome, M.; Susini, J.; Szlachetko, J.

    2009-09-15

    We demonstrate that ultralow-level Al impurities on a silicon surface can be measured by using the high-resolution grazing emission x-ray fluorescence (GEXRF) technique combined with synchrotron-radiation excitation. An Al-impurity level of about 10{sup 12} atoms/cm{sup 2} was reached by observing the Al K{alpha} x-ray fluorescence in the resonant Raman-scattering background-''free'' regime by choosing an appropriate beam energy below the Si K absorption edge. Present results show that by combining the GEXRF method with the vapor phase decomposition technique the 10{sup 7} atoms/cm{sup 2} level can be reached for Al detection on silicon. Finally, we found that the high-resolution GEXRF technique is a sensitive tool to study the morphology of surface nanostructures.

  8. Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy

    SciTech Connect

    Kurtz, A.; Hierro, A. Muñoz, E.

    2014-02-24

    A combination of deep level optical spectroscopy and lighted capacitance voltage profiling has been used to analyze the effect of N into the energy levels close to the valence band of Zn{sub 0.9}Mg{sub 0.1}O. Three energy levels at E{sub V} + 0.47 eV, E{sub V} + 0.35 eV, and E{sub V} + 0.16 eV are observed in all films with concentrations in the range of 10{sup 15}–10{sup 18} cm{sup −3}. The two shallowest traps at E{sub V} + 0.35 eV and E{sub V} + 0.16 eV have very large concentrations that scale with the N exposure and are thus potential acceptor levels. In order to correctly quantify the deep level concentrations, a metal-insulator-semiconductor model has been invoked, explaining well the resulting capacitance-voltage curves.

  9. Low level impurities in imported wheat are a likely source of feral transgenic oilseed rape (Brassica napus L.) in Switzerland.

    PubMed

    Schulze, Juerg; Brodmann, Peter; Oehen, Bernadette; Bagutti, Claudia

    2015-11-01

    In Switzerland, the cultivation of genetically modified (GM) oilseed rape (Brassica napus L.) and the use of its seeds for food and feed are not permitted. Nevertheless, the GM oilseed rape events GT73, MS8×RF3, MS8 and RF3 have recently been found in the Rhine port of Basel, Switzerland. The sources of GM oilseed rape seeds have been unknown. The main agricultural good being imported at the Rhine port of Basel is wheat and from 2010 to 2013, 19% of all Swiss wheat imports originated from Canada. As over 90% of all oilseed rape grown in Canada is GM, we hypothesised that imports of Canadian wheat may contain low level impurities of GM oilseed rape. Therefore, waste fraction samples gathered during the mechanical cleaning of Canadian wheat from two Swiss grain mills were analysed by separating oilseed rape seeds from waste fraction samples and testing DNA of pooled seeds for the presence of transgenes by real-time PCR. Furthermore, oilseed rape seeds from each grain mill were sown in a germination experiment, and seedling DNA was tested for the presence of transgenes by real-time PCR. GT73, MS8×RF3, MS8 and RF3 oilseed rape was detected among seed samples and seedlings of both grain mills. Based on this data, we projected a mean proportion of 0.005% of oilseed rape in wheat imported from Canada. Besides Canadian wheat, the Rhine port of Basel does not import any other significant amounts of agricultural products from GM oilseed rape producing countries. We therefore conclude that Canadian wheat is the major source of unintended introduction of GM oilseed rape seeds into Switzerland. PMID:26109224

  10. Low level impurities in imported wheat are a likely source of feral transgenic oilseed rape (Brassica napus L.) in Switzerland.

    PubMed

    Schulze, Juerg; Brodmann, Peter; Oehen, Bernadette; Bagutti, Claudia

    2015-11-01

    In Switzerland, the cultivation of genetically modified (GM) oilseed rape (Brassica napus L.) and the use of its seeds for food and feed are not permitted. Nevertheless, the GM oilseed rape events GT73, MS8×RF3, MS8 and RF3 have recently been found in the Rhine port of Basel, Switzerland. The sources of GM oilseed rape seeds have been unknown. The main agricultural good being imported at the Rhine port of Basel is wheat and from 2010 to 2013, 19% of all Swiss wheat imports originated from Canada. As over 90% of all oilseed rape grown in Canada is GM, we hypothesised that imports of Canadian wheat may contain low level impurities of GM oilseed rape. Therefore, waste fraction samples gathered during the mechanical cleaning of Canadian wheat from two Swiss grain mills were analysed by separating oilseed rape seeds from waste fraction samples and testing DNA of pooled seeds for the presence of transgenes by real-time PCR. Furthermore, oilseed rape seeds from each grain mill were sown in a germination experiment, and seedling DNA was tested for the presence of transgenes by real-time PCR. GT73, MS8×RF3, MS8 and RF3 oilseed rape was detected among seed samples and seedlings of both grain mills. Based on this data, we projected a mean proportion of 0.005% of oilseed rape in wheat imported from Canada. Besides Canadian wheat, the Rhine port of Basel does not import any other significant amounts of agricultural products from GM oilseed rape producing countries. We therefore conclude that Canadian wheat is the major source of unintended introduction of GM oilseed rape seeds into Switzerland.

  11. Suitability of different containers for the sampling and storage of biogas and biomethane for the determination of the trace-level impurities--A review.

    PubMed

    Arrhenius, Karine; Brown, Andrew S; van der Veen, Adriaan M H

    2016-01-01

    The traceable and accurate measurement of biogas impurities is essential in order to robustly assess compliance with the specifications for biomethane being developed by CEN/TC408. An essential part of any procedure aiming to determinate the content of impurities is the sampling and the transfer of the sample to the laboratory. Key issues are the suitability of the sample container and minimising the losses of impurities during the sampling and analysis process. In this paper, we review the state-of-the-art in biogas sampling with the focus on trace impurities. Most of the vessel suitability studies reviewed focused on raw biogas. Many parameters need to be studied when assessing the suitability of vessels for sampling and storage, among them, permeation through the walls, leaks through the valves or physical leaks, sorption losses and adsorption effects to the vessel walls, chemical reactions and the expected initial concentration level. The majority of these studies looked at siloxanes, for which sampling bags, canisters, impingers and sorbents have been reported to be fit-for-purpose in most cases, albeit with some limitations. We conclude that the optimum method requires a combination of different vessels to cover the wide range of impurities commonly found in biogas, which have a wide range of boiling points, polarities, water solubilities, and reactivities. The effects from all the parts of the sampling line must be considered and precautions must be undertaken to minimize these effects. More practical suitability tests, preferably using traceable reference gas mixtures, are needed to understand the influence of the containers and the sampling line on sample properties and to reduce the uncertainty of the measurement.

  12. Suitability of different containers for the sampling and storage of biogas and biomethane for the determination of the trace-level impurities--A review.

    PubMed

    Arrhenius, Karine; Brown, Andrew S; van der Veen, Adriaan M H

    2016-01-01

    The traceable and accurate measurement of biogas impurities is essential in order to robustly assess compliance with the specifications for biomethane being developed by CEN/TC408. An essential part of any procedure aiming to determinate the content of impurities is the sampling and the transfer of the sample to the laboratory. Key issues are the suitability of the sample container and minimising the losses of impurities during the sampling and analysis process. In this paper, we review the state-of-the-art in biogas sampling with the focus on trace impurities. Most of the vessel suitability studies reviewed focused on raw biogas. Many parameters need to be studied when assessing the suitability of vessels for sampling and storage, among them, permeation through the walls, leaks through the valves or physical leaks, sorption losses and adsorption effects to the vessel walls, chemical reactions and the expected initial concentration level. The majority of these studies looked at siloxanes, for which sampling bags, canisters, impingers and sorbents have been reported to be fit-for-purpose in most cases, albeit with some limitations. We conclude that the optimum method requires a combination of different vessels to cover the wide range of impurities commonly found in biogas, which have a wide range of boiling points, polarities, water solubilities, and reactivities. The effects from all the parts of the sampling line must be considered and precautions must be undertaken to minimize these effects. More practical suitability tests, preferably using traceable reference gas mixtures, are needed to understand the influence of the containers and the sampling line on sample properties and to reduce the uncertainty of the measurement. PMID:26703250

  13. A facility for conducting high-temperature oxidation experiments of alloys in helium environments containing part per million levels of impurities

    NASA Astrophysics Data System (ADS)

    Kumar, Deepak; Torbet, Christopher J.; Was, Gary S.

    2009-09-01

    An experimental facility was constructed to study the corrosion of alloys in helium containing part per million (ppm) levels of CO, CO2, CH4 and H2 as impurities, relevant to the environment in the heat exchanger of the Very High Temperature Gas Cooled Reactor. The system provides the capability of exposing multiple specimens in up to seven separate helium environments, simultaneously, for durations of >1000 h and temperatures up to 1200 °C. Impurity concentrations are controlled down to 1 ppm accuracy and analyzed using a discharge ionization detector gas chromatograph. The utility and reliability of the facility in quantitatively accounting for the masses of reactants and products involved in the oxidation of alloy 617 at 900 °C and 1000 °C in the helium gas containing 15 ppm CO and 1.5 ppm CO2 is confirmed by the weight-gain measurements, gas-phase analysis and post-test microstructural analysis.

  14. Matrix elimination ion chromatography method for the determination of trace levels of anionic impurities in high purity cesium iodide.

    PubMed

    Ayushi; Kumar, Sangita D; Reddy, A V R

    2012-01-01

    In the present study an ion chromatographic method based on matrix elimination has been developed for the determination of anionic impurities in high purity cesium iodide crystals. The presence of impurities has a detrimental effect on the characteristics of detectors based on cesium iodide crystals. In particular, oxygen-containing anions inhibit the resolving power of scintillators and decrease the optical absorption. The quantitative determination of anions (fluoride, chloride, bromide, nitrate, phosphate, and sulphate) simultaneously in the high-purity cesium iodide crystals has not been carried out before. The large concentration of iodide poses a challenge in the determination of anions (especially phosphate and sulphate); hence, matrix elimination is accomplished by adopting a sample pretreatment technique. The method is validated for linearity, accuracy, and precision. The limit of detection for different anions is in the range of 0.3-3 µg/g, and the relative standard deviation is in the range of 4-6% for the overall method.

  15. Improved Performance of the Alkaline-Side CSEX Process for Cesium Extraction from Alkaline High-Level Waste Obtained by Characterization of the Effect of Surfactant Impurities

    SciTech Connect

    Delmau, L.H.

    1999-11-04

    Improved understanding and performance of the alkaline-side CSEX process has been obtained through the characterization of impurity effects that hinder complete stripping of cesium from the solvent. It is shown in this report that tests of the alkaline-side CSEX process conducted in the summer and fall of 1998 were complicated by the presence of common surfactant anions, undecyl- and dodecylsulfonate, as trace impurities in the two simulants tested. This conclusion was drawn from the results of a series of systematic extraction tests followed by a definitive identification by electrospray mass spectrometry (ES-MS). Based on this understanding, a straightforward preventative measure involving the addition of a lipophilic tertiary amine extractant at a small concentration to the solvent is proposed and demonstrated. As part of the task ''Fission Product Solvent Extraction'' supported by the Efficient Separations and Processing Crosscutting Program within the USDOE Office of Environmental Management, the alkaline-side CSEX process has been developed for removal of radio-cesium ({sup 137}Cs) from alkaline high-level wastes stored in underground tanks at the Hanford Site and Savannah River Site (SRS). As described in a previous report, tests conducted in Fiscal Year 1998 generally demonstrated performance meeting the requirements for cesium removal from the waste to be treated at the SRS. However, discrepancies in stripping behavior were shown to arise from unidentified differences ''in the batches of waste simulant employed for testing. Various effects such as solvent impurities, kinetics, contacting method, and counting method were eliminated as possible causes of the observed discrepancies. Tests in Fiscal Year 1999 reported herein confirmed the earlier suspicion that the simulants contained lipophilic anionic impurities. Extraction tests demonstrated that the impurities could be concentrated in the solvent, and by ES-MS in the negative-ion mode it was possible to

  16. Impurities in Kevlar 49 fibers

    SciTech Connect

    Pruneda, C.O.; Morgan, R.J.; Lim, R.; Gregory, L.J.; Fischer, J.W.

    1984-12-11

    The impurities in Kevlar 49 fibers (poly(p-phenylene terephthalamide)PPTA) are reported and discussed in terms of the fiber fabrication processes. These impurities were monitored by inductively coupled plasma emission and optical emission spectroscopy. The principal impurities Na/sub 2/SO/sub 4/ and total S were analyzed chemically. From these chemical analyses together with C, N, H elemental analyses we show that there are 1.5 wt % impurities present in Kevlar 49 fibers of which approx. 50% are in the form of Na/sub 2/SO/sub 4/ and the remainder probably in the form of benzene sulfonic -SO/sub 3/H PPTA side groups. There are 3 of these acid groups per each PPTA macromolecule. Organic impurities, such as terephthalic acid are discussed in the light of degradation studies of PPTA-H/sub 2/SO/sub 4/ spinning dopes. Electron microprobe x-ray spectroscopy and laser-induced damage studies were utilized to investigate the distribution of impurities through the fiber cross-section. The distribution of impurities throughout the fiber are determined by the fiber fabrication processes and are discussed at the microscopic and molecular level. The defects caused by these impurities and their effect on the deformation and failure modes are also considered. 22 references, 3 tables.

  17. Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

    SciTech Connect

    Dagnelund, D.; Huang, Y. Q.; Buyanova, I. A.; Chen, W. M.; Tu, C. W.; Yonezu, H.

    2015-01-07

    By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.

  18. The Impact of Glyphosate, Its Metabolites and Impurities on Viability, ATP Level and Morphological changes in Human Peripheral Blood Mononuclear Cells.

    PubMed

    Kwiatkowska, Marta; Jarosiewicz, Paweł; Michałowicz, Jaromir; Koter-Michalak, Maria; Huras, Bogumiła; Bukowska, Bożena

    2016-01-01

    The toxicity of herbicides to animals and human is an issue of worldwide concern. The present study has been undertaken to assess toxic effect of widely used pesticide-glyphosate, its metabolites: aminomethylphosphonic acid (AMPA) and methylphosphonic acid and its impurities: N-(phosphonomethyl)iminodiacetic acid (PMIDA), N-methylglyphosate, hydroxymethylphosphonic acid and bis-(phosphonomethyl)amine on human peripheral blood mononuclear cells (PBMCs). We have evaluated the effect of those compounds on viability, ATP level, size (FSC-A parameter) and granulation (SSC-A parameter) of the cells studied. Human peripheral blood mononuclear cells were exposed to different concentrations of glyphosate, its metabolites and impurities (0.01-10 mM) for 4 and 24 h. It was found that investigated compounds caused statistically significant decrease in viability and ATP level of PBMCs. The strongest changes in cell viability and ATP level were observed after 24 h incubation of PBMCs with bis-(phosphonomethyl)amine, and particularly PMIDA. Moreover, all studied compounds changed cell granularity, while PMIDA and bis-(phosphonomethyl)amine altered PBMCs size. It may be concluded that bis-(phosphonomethyl)amine, and PMIDA caused a slightly stronger damage to PBMCs than did glyphosate. Changes in the parameters studied in PBMCs were observed only at high concentrations of the compounds examined, which clearly shows that they may occur in this cell type only as a result of acute poisoning of human organism with these substances. PMID:27280764

  19. The Impact of Glyphosate, Its Metabolites and Impurities on Viability, ATP Level and Morphological changes in Human Peripheral Blood Mononuclear Cells

    PubMed Central

    Kwiatkowska, Marta; Jarosiewicz, Paweł; Michałowicz, Jaromir; Koter-Michalak, Maria; Huras, Bogumiła; Bukowska, Bożena

    2016-01-01

    The toxicity of herbicides to animals and human is an issue of worldwide concern. The present study has been undertaken to assess toxic effect of widely used pesticide—glyphosate, its metabolites: aminomethylphosphonic acid (AMPA) and methylphosphonic acid and its impurities: N-(phosphonomethyl)iminodiacetic acid (PMIDA), N-methylglyphosate, hydroxymethylphosphonic acid and bis-(phosphonomethyl)amine on human peripheral blood mononuclear cells (PBMCs). We have evaluated the effect of those compounds on viability, ATP level, size (FSC-A parameter) and granulation (SSC-A parameter) of the cells studied. Human peripheral blood mononuclear cells were exposed to different concentrations of glyphosate, its metabolites and impurities (0.01–10 mM) for 4 and 24 h. It was found that investigated compounds caused statistically significant decrease in viability and ATP level of PBMCs. The strongest changes in cell viability and ATP level were observed after 24 h incubation of PBMCs with bis-(phosphonomethyl)amine, and particularly PMIDA. Moreover, all studied compounds changed cell granularity, while PMIDA and bis-(phosphonomethyl)amine altered PBMCs size. It may be concluded that bis-(phosphonomethyl)amine, and PMIDA caused a slightly stronger damage to PBMCs than did glyphosate. Changes in the parameters studied in PBMCs were observed only at high concentrations of the compounds examined, which clearly shows that they may occur in this cell type only as a result of acute poisoning of human organism with these substances. PMID:27280764

  20. The effectiveness and stability of impurity/defect interactions and their impact on minority carrier lifetime. Annual subcontract report, 1 August 1990--31 July 1991

    SciTech Connect

    Rozgonyi, G.A.; Shimura, F.; Buczkowski, A.; Zhon, T.Q.

    1991-12-01

    This report covers the investigation and understanding of electrical activity of ``clean`` and metallic impurity decorated defects. A heterostructure containing a controlled number of deliberately introduced misfit dislocations is used as a model system to simulate a variety of defect/impurity interactions in photovoltaic materials. In addition, a noncontact laser/microwave deep-level transient spectroscopy technique is applied to characterize the minority carrier lifetime and determine the energy levels of defects. 59 refs.

  1. Methods of measuring water levels in deep wells

    USGS Publications Warehouse

    Garber, M.S.; Koopman, F. C.

    1968-01-01

    Accurate measurement of water levels deeper than 1,000 feet in wells requires specialized equipment. Corrections for stretch and thermal expansion of measuring tapes must be considered, and other measuring devices must be calibrated periodically. Bore-hole deviation corrections also must be made. Devices for recording fluctuation of fluid level usually require mechanical modification for use at these depths. A multichannel recording device utilizing pressure transducers has been constructed. This device was originally designed to record aquifer response to nearby underground nuclear explosions but can also be used for recording data from multi-well pumping tests. Bottom-hole recording devices designed for oil-field use have been utilized in a limited manner. These devices were generally found to lack the precision required, in ground-water investigations at the Nevada Test Site but may be applicable in other areas. A newly developed bottom-hole recording pressure gauge of improved accuracy has been used with satisfactory results.

  2. Deep levels in semi-insulating LEC GaAs before and after silicon implantation

    SciTech Connect

    Dindo, S.; Abdel-Motaleb, I.; Lowe, K.; Tang, W.; Young, L.

    1985-11-01

    The deep trapping levels present before ion implantation of silicon into the semi-insulating LEC GaAs starting material were investigated using optical transient current spectroscopy (OTCS). MESFET channel current deep level transient spectroscopy (DLTS) was used for the implanted material. With a silicon nitride layer used t encapsulate the GaAs for postimplantation annealing and with implantation directly into the GaAs, it was found tha of seven or more deep levels seen in the semi-insulating substrate prior to silicon implantation only the level believed to be EL12 remained. On implanting through a thin Si/sub 3/N/sub 4/ encapsulating layer and annealing under Si/sub 3/N/sub 4/, only EL2 was found. With a silicon dioxide layer as an encapsulant, two traps remained and two apparently unreported levels appeared.

  3. Effects of irradiation and annealing on deep levels in rhodium-doped p-GaAs grown by metal-organic chemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Naz, Nazir A.; Qurashi, Umar S.; Iqbal, M. Zafar

    2011-06-01

    This paper reports a detailed study of the effects of irradiation and thermal annealing on deep levels in Rh-doped p-type GaAs grown by low-pressure metal-organic chemical-vapor deposition, using deep level transient spectroscopy (DLTS) technique. It is found upon irradiation with alpha particles that, in addition to the radiation-induced defect peaks, all the Rh-related peaks observed in majority, as well as minority-carrier emission DLTS scans show an increase in their respective concentrations. The usually observed α-induced defects Hα1, Hα2, and Hα3 are found to have lower introduction rates in Rh-doped samples, as compared to reference samples (not doped with Rh). Alpha-irradiation has been found to decompose the two minority carrier emitting bands (one at low temperature ˜150 K and the other at ˜380 K) observed prior to irradiation into distinct peaks corresponding to deep levels Rh1 and Rh2 and EL2 and Rh3, respectively. A similar effect is also observed for the majority-carrier emitting band composed of hole emission from deep levels RhA and RhB, which separate out well upon irradiation. Further, from the double-correlation DLTS measurements, the emission rates of carriers from the radiation-enhanced peaks corresponding to deep levels Rh1, Rh2, Rh3, and RhC were found to be dependent on junction electric field. For RhC, the field dependence data have been analyzed in terms of the Poole-Frenkel model employing a 3-dimensional Coulomb potential with q = 2e (electronic charge). Temperature dependence of the hole capture cross-sections of the levels RhA and RhC was also studied quantitatively. The observed dependence of the hole capture cross-section of RhC on temperature can be interpreted in terms of multiphonon capture model, yielding a capture barrier of 0.2 eV and σ(∞) = 2.3 × 10-14 cm2. The results of irradiation and isochronal thermal annealing study, in combination with the theoretical analysis of the field dependence of hole emission data

  4. Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe: Preprint

    SciTech Connect

    Wei, S. H.; Ma, J.; Gessert, T. A.; Chin, K. K.

    2011-07-01

    Doping is one of the most important issues in semiconductor physics. The charge carrier generated by doping can profoundly change the properties of semiconductors and their performance in optoelectronic device applications, such as solar cells. Using detailed balance theory and first-principles calculated defect formation energies and transition energy levels, we derive general formulae to calculate carrier density for semiconductors with multi dopants and multi transition energy levels. As an example, we studied CdTe doped with Cu, in which VCd, CuCd, and Cui are the dominant defects/impurities. We show that in this system, when Cu concentration increases, the doping properties of the system can change from a poor p-type, to a poorer p-type, to a better p-type, and then to a poor p-type again, in good agreement with experimental observation of CdTe-based solar cells.

  5. Effect of deep breathing on extracted oxygen and cerebral hemoglobin levels.

    PubMed

    Kennedy, Patrick M; Zarbock, Christopher M; Burke, Broc A; Diamond, Solomon G

    2011-01-01

    This study examines the relationship between oxygen expired and functional near infrared spectroscopy (fNIRS) measured hemoglobin levels in the brain. Analysis of these two signals during normal versus deep breathing provides insight into the dynamics of cerebral physiology. Intersubject variation suggests the existence of two distinct groups with respect to oxygen extraction and hemoglobin levels. PMID:22254486

  6. Trace level liquid chromatography tandem mass spectrometry quantification of the mutagenic impurity 2-hydroxypyridine N-oxide as its dansyl derivative.

    PubMed

    Ding, Wei; Huang, Yande; Miller, Scott A; Bolgar, Mark S

    2015-03-20

    A derivatization LC-MS/MS method was developed and qualified for the trace level quantification of 2-hydroxypyridine N-oxide (HOPO). HOPO is a coupling reagent used in the syntheses of active pharmaceutical ingredients (APIs) to form amide bonds. HOPO was recently confirmed to generate a positive response in a GLP Ames bacterial-reverse-mutation test, classifying it as a mutagenic impurity and as such requiring its control in APIs to the threshold of toxicological concern (TTC). The derivatization reagent 5-dimethylamino-1-naphthalenesulfonyl chloride (dansyl chloride) was used in a basic solution to convert HOPO into the corresponding dansyl-derivative. The derivative was separated from different APIs and reagents by liquid chromatography. The detection of the HOPO dansyl-derivative was achieved by mass spectrometry in selected reaction monitoring (SRM) mode. The LC-MS/MS method had a reporting limit of 0.1ng/mL HOPO, which corresponds to 0.1ppm HOPO relative to an API at 1mg/mL, and a linearity range of 0.1-25ng/mL HOPO analyte. Recoveries of HOPO standards spiked into three different API matrices at 0.2, 1.2, and 20ppm levels were all within 90-100%. An SRM-based confirmatory methodology using the ratios of two fragment ions at three CID energies was developed to verify the identity of HOPO when present at ≥0.6ppm. This identity confirmation can be employed to prevent potential false positive detection of mutagenic impurities at trace level. It can be broadly applicable for the confirmation of analytes when the analytes generate at least two major fragments in tandem mass spectrometry experiments.

  7. Impact of proton irradiation on deep level states in n-GaN

    SciTech Connect

    Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

    2013-07-22

    Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10{sup 13} cm{sup −2}. The proton irradiation introduced two traps with activation energies of E{sub C} - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E{sub C} - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence.

  8. Investigation of deep levels in porous silicon by photoconductivity decay and thermally stimulated depolarization current methods

    NASA Astrophysics Data System (ADS)

    Borowski, P.; Bratkowski, A.; Bala, Waclaw; Bartkiewicz, K.

    2003-10-01

    The photoconductivity measurements of porous silicon were made using the visible light in wavelength range of 450 nm - 1200 nm. Obtained photoconductivity spectra were decomposed as a sum of Gaussian. The deep level energies are calculated for these peaks at about 1.24 eV, 1.33 eV, 1.55 eV, 1.84 eV, 2.17 eV and 2.54 eV at room temperature. To characterizing the deep levels we used also thermally stimulated depolarizaton current method (TSDC). In this case we used a thermal stimulation in temperature range of about 90 K - 300 K in vaccuum. After multigaussian decomposing of the current-temperature characteristic we calculated the thermal deep levels energies (0.4 eV and 0.8 eV). From the voltage-current measurements ideality factor was also calculated.

  9. Interactions of structural defects with metallic impurities in multicrystalline silicon

    SciTech Connect

    McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

    1997-04-01

    Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L{sub n} values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions.

  10. A Method for Studying the Electric Field Enhanced Emission of Carriers from Deep Levels

    NASA Astrophysics Data System (ADS)

    Hwang, In Duk; Choe, Byungdoo

    1986-11-01

    A spectroscopic method is proposed for studying the electric field enhanced emission of trapped carriers from deep levels. The resulting spectrum directly represents the effect of the electric field enhanced emission only, thus removing the intrinsic difficulty in treating the electric field enhanced emission from deep levels of large concentration. This method involves two steps of measurements of the ionized trap densities; in the first step the electric field pulse is applied to induce an enhanced emission, and in the second without the electric field pulse. Experimental results by this method have been given for the DX center in LPE Al068Ga0.32As:Sn.

  11. Correlation of a generation-recombination center with a deep level trap in GaN

    SciTech Connect

    Nguyen, X. S. E-mail: elecsj@nus.edu.sg; Lin, K.; Zhang, Z.; Arehart, A. R.; Ringel, S. A.; McSkimming, B.; Speck, J. S.; Fitzgerald, E. A.; Chua, S. J. E-mail: elecsj@nus.edu.sg

    2015-03-09

    We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E{sub c} − 0.26 eV, E{sub c} − 0.59 eV, and E{sub c} − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E{sub c} − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E{sub c} − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials.

  12. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides.

    PubMed

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G; Wei, Su-Huai; Liu, Feng

    2015-09-18

    Developing practical approaches to effectively reduce the amount of deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this still remains a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for transition-metal dichalcogenides, such as MoSe_{2} and WSe_{2}, where anion vacancies are the most abundant defects that can induce deep levels, the deep levels can be effectively suppressed in Mo_{1-x}W_{x}Se_{2} alloys at low W concentrations. This surprising phenomenon is associated with the fact that the band edge energies can be substantially tuned by the global alloy concentration, whereas the defect level is controlled locally by the preferred locations of Se vacancies around W atoms. Our findings illustrate a concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.

  13. Elemental Impurities in Pharmaceutical Excipients.

    PubMed

    Li, Gang; Schoneker, Dave; Ulman, Katherine L; Sturm, Jason J; Thackery, Lisa M; Kauffman, John F

    2015-12-01

    Control of elemental impurities in pharmaceutical materials is currently undergoing a transition from control based on concentrations in components of drug products to control based on permitted daily exposures in drug products. Within the pharmaceutical community, there is uncertainty regarding the impact of these changes on manufactures of drug products. This uncertainty is fueled in part by a lack of publically available information on elemental impurity levels in common pharmaceutical excipients. This paper summarizes a recent survey of elemental impurity levels in common pharmaceutical excipients as well as some drug substances. A widely applicable analytical procedure was developed and was shown to be suitable for analysis of elements that are subject to United States Pharmacopoeia Chapter <232> and International Conference on Harmonization's Q3D Guideline on Elemental Impurities. The procedure utilizes microwave-assisted digestion of pharmaceutical materials and inductively coupled plasma mass spectrometry for quantitative analysis of these elements. The procedure was applied to 190 samples from 31 different excipients and 15 samples from eight drug substances provided through the International Pharmaceutical Excipient Council of the Americas. The results of the survey indicate that, for the materials included in the study, relatively low levels of elemental impurities are present. PMID:26398581

  14. Elemental Impurities in Pharmaceutical Excipients.

    PubMed

    Li, Gang; Schoneker, Dave; Ulman, Katherine L; Sturm, Jason J; Thackery, Lisa M; Kauffman, John F

    2015-12-01

    Control of elemental impurities in pharmaceutical materials is currently undergoing a transition from control based on concentrations in components of drug products to control based on permitted daily exposures in drug products. Within the pharmaceutical community, there is uncertainty regarding the impact of these changes on manufactures of drug products. This uncertainty is fueled in part by a lack of publically available information on elemental impurity levels in common pharmaceutical excipients. This paper summarizes a recent survey of elemental impurity levels in common pharmaceutical excipients as well as some drug substances. A widely applicable analytical procedure was developed and was shown to be suitable for analysis of elements that are subject to United States Pharmacopoeia Chapter <232> and International Conference on Harmonization's Q3D Guideline on Elemental Impurities. The procedure utilizes microwave-assisted digestion of pharmaceutical materials and inductively coupled plasma mass spectrometry for quantitative analysis of these elements. The procedure was applied to 190 samples from 31 different excipients and 15 samples from eight drug substances provided through the International Pharmaceutical Excipient Council of the Americas. The results of the survey indicate that, for the materials included in the study, relatively low levels of elemental impurities are present.

  15. Deep-level admittance spectroscopy of DX centers in AlGaAs:Sn

    NASA Astrophysics Data System (ADS)

    Chakravarty, S.; Subramanian, S.; Sharma, D. K.; Arora, B. M.

    1989-10-01

    Deep-level admittance spectroscopy (DLAS) of DX centers in AlxGa1-xAs:Sn (0.2levels SN1, SN2, and SN3 related to the Sn donor. While SN1 and SN3 are observed in all the samples, SN2 is prominently seen only in the indirect band-gap samples. The conventional capacitance deep-level transient spectroscopy (DLTS) is found to be unsuitable for the study of the DX center in AlxGa1-xAs:Sn with x>0.35 because of the strong freeze-out of free carriers in these samples. Even in the case of low AlAs mole fraction samples (x<0.35), the DLTS technique fails to reveal all the levels observed by DLAS and provides information only on the SN3 level.

  16. Application of isothermal current deep level transient spectroscopy to solar cells

    NASA Astrophysics Data System (ADS)

    Rancour, D. P.; Pierret, R. F.; Lundstrom, M. S.; Melloch, M. R.

    1989-03-01

    The utility of isothermal current deep level transient spectroscopy (DLTS) techniques in directly probing solar cells is described and illustrated. A modified approach to processing the isothermal DLTS data is also presented. Specifically, it is pointed out that properly normalized isothermal data, whether derived from a current or capacitance transient, should conform to a single, temperature-independent curve.

  17. Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

    SciTech Connect

    Sobolev, M. M.; Nevedomskii, V. N.; Zolotareva, R. V.; Vasil'ev, A. P.; Ustinov, V. M.

    2014-02-21

    Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.

  18. Theoretical Explanation for Success of Deep-Level-Learning Study Tours

    ERIC Educational Resources Information Center

    Bergsteiner, Harald; Avery, Gayle C.

    2008-01-01

    Study tours can help internationalize curricula and prepare students for global workplaces. We examine benefits of tours providing deep-level learning experiences rather than industrial tourism using five main theoretical frameworks to highlight the diverse learning benefits associated with intensive study tours in particular. Relevant theoretical…

  19. Deep Intuition as a Level in the Development of the Concept Image

    ERIC Educational Resources Information Center

    Semadeni, Zbigniew

    2008-01-01

    To explicate certain phenomena, e.g., the possibility of deduction without definition, we hypothesize that an individual is able to understand and appreciate reasoning with a due feeling of its necessity when the concept image of each concept involved in the reasoning has reached a certain level of development; we then speak of "deep intuition".…

  20. Influence of impurities on the crystallization of dextrose monohydrate

    NASA Astrophysics Data System (ADS)

    Markande, Abhay; Nezzal, Amale; Fitzpatrick, John; Aerts, Luc; Redl, Andreas

    2012-08-01

    The effects of impurities on dextrose monohydrate crystallization were investigated. Crystal nucleation and growth kinetics in the presence of impurities were studied using an in-line focused beam reflectance monitoring (FBRM) technique and an in-line process refractometer. Experimental data were obtained from runs carried out at different impurity levels between 4 and 11 wt% in the high dextrose equivalent (DE) syrup. It was found that impurities have no significant influence on the solubility of dextrose in water. However, impurities have a clear influence on the nucleation and growth kinetics of dextrose monohydrate crystallization. Nucleation and growth rate were favored by low levels of impurities in the syrup.

  1. Copper-related deep-level centers in irradiated p-type silicon

    SciTech Connect

    Yarykin, Nikolai; Weber, Joerg

    2011-03-15

    Deep-level centers are investigated in the p-type Si on copper-contaminated samples which were also electron irradiated. Standard and Laplace-transform deep-level transient spectroscopy techniques were employed to characterize the samples. Several Cu-related centers are observed to form either as a result of the low-temperature Cu diffusion into the irradiated crystals or due to irradiation of the Cu-contaminated samples and subsequent annealing up to 400 deg. C. In all crystals, two Cu-related defects are found to be the most abundant; each of them possesses a pair of levels in the lower half of the gap. The Arrhenius signatures for one pair are measured to be practically identical to those for the donor and acceptor levels of substitutional copper Cu{sub s}, respectively, the levels of other defect being only barely different from the Cu{sub s} levels. Analysis of the introduction rates and depth profiles of the deep-level centers points to the vacancy-oxygen complex (VO, the A center) as the precursor of the most abundant Cu-related defects. It is inferred that Cu{sub s} is formed in irradiated silicon due to interaction with the VO centers via the rather stable intermediate CuVO complex.

  2. Method for detecting trace impurities in gases

    DOEpatents

    Freund, Samuel M.; Maier, II, William B.; Holland, Redus F.; Beattie, Willard H.

    1981-01-01

    A technique for considerably improving the sensitivity and specificity of infrared spectrometry as applied to quantitative determination of trace impurities in various carrier or solvent gases is presented. A gas to be examined for impurities is liquefied and infrared absorption spectra of the liquid are obtained. Spectral simplification and number densities of impurities in the optical path are substantially higher than are obtainable in similar gas-phase analyses. Carbon dioxide impurity (.about.2 ppm) present in commercial Xe and ppm levels of Freon 12 and vinyl chloride added to liquefied air are used to illustrate the method.

  3. Method for detecting trace impurities in gases

    DOEpatents

    Freund, S.M.; Maier, W.B. II; Holland, R.F.; Beattie, W.H.

    A technique for considerably improving the sensitivity and specificity of infrared spectrometry as applied to quantitative determination of trace impurities in various carrier or solvent gases is presented. A gas to be examined for impurities is liquefied and infrared absorption spectra of the liquid are obtained. Spectral simplification and number densities of impurities in the optical path are substantially higher than are obtainable in similar gas-phase analyses. Carbon dioxide impurity (approx. 2 ppM) present in commercial Xe and ppM levels of Freon 12 and vinyl chloride added to liquefied air are used to illustrate the method.

  4. Laplace defect spectroscopy for recognition of deep-level fine structures

    NASA Astrophysics Data System (ADS)

    Kang, Junyong; Zhan, Huahan; Huang, Qi/sheng

    2000-03-01

    A Laplace defect spectrometer (LDS) was investigated for use in decomposition of non-exponential transients. The system was tested by measuring known multi-exponential transients generated by RC circuits and applied to the study of non-exponential transients resulting from electron emission from Sn-related DX centers and hole emission from Fe-related deep acceptors. The non-exponential transients were investigated under different conditions and related to the alloy random effect. Their LDS spectra exhibited several well-resolved sharp peaks that were assigned to the fine structures of the two DX centers and the Fe-related deep acceptors, respectively, after comparison with DLTS observations. The activation energies of the fine structures were determined by linear fitting of the slopes of temperature dependences of electron and hole emission rates. The results show that the LDS is useful for investigation of deep-level fine structures.

  5. Identification of process related trace level impurities in the actinide decorporation agent 3,4,3-LI(1,2-HOPO): Nozzle–skimmer fragmentation via ESI LC–QTOFMS

    DOE PAGES

    Panyala, Nagender R.; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J.

    2014-08-12

    We report that 3,4,3-LI(1,2-HOPO) is a chelating ligand and decorporation agent that can remove radioactive lanthanides and actinides from the body. Identification of trace impurities in drug samples is gaining much interest due to their significant influence on drug activity. In this study, trace impurities were detected in manufactured lots of 3,4,3-LI(1,2-HOPO) by a developed method of Liquid Chromatography coupled with photo-diode array UV detection and Electrospray Ionization-Quadrupole Time of Flight Mass spectrometry (LC-QTOFMS), via induced-in-source or collision-induced mass fragmentation (Nozzle-Skimmer Fragmentation). Molecular ions were fragmented within the nozzle-skimmer region of electrospray ionization (ESI) mass spectrometer equipped with a Timemore » of Flight detector. Eight major (detected at levels higher than a 0.1% threshold) and seven minor trace impurities were identified. The respective structures of these impurities were elucidated via analysis of the generated fragment ions using mass fragmentation and elemental composition software. Proposed structures of impurities were further confirmed via isotopic modeling.« less

  6. Identification of process related trace level impurities in the actinide decorporation agent 3,4,3-LI(1,2-HOPO): Nozzle-skimmer fragmentation via ESI LC-QTOFMS.

    PubMed

    Panyala, Nagender R; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J

    2014-11-01

    3,4,3-LI(1,2-HOPO) is a chelating ligand and decorporation agent that can remove radioactive lanthanides and actinides from the body. Identification of trace impurities in drug samples is gaining much interest due to their significant influence on drug activity. In this study, trace impurities were detected in manufactured lots of 3,4,3-LI(1,2-HOPO) by a developed method of liquid chromatography coupled with photo-diode array UV detection and electrospray ionization-quadrupole time of flight mass spectrometry (LC-QTOFMS), via induced-in-source or collision-induced mass fragmentation (nozzle-skimmer fragmentation). Molecular ions were fragmented within the nozzle-skimmer region of electrospray ionization (ESI) mass spectrometer equipped with a Time of Flight detector. Eight major (detected at levels higher than a 0.1% threshold) and seven minor trace impurities were identified. The respective structures of these impurities were elucidated via analysis of the generated fragment ions using mass fragmentation and elemental composition software. Proposed structures of impurities were further confirmed via isotopic modeling.

  7. Identification of process related trace level impurities in the actinide decorporation agent 3,4,3-LI(1,2-HOPO): Nozzle–skimmer fragmentation via ESI LC–QTOFMS

    SciTech Connect

    Panyala, Nagender R.; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J.

    2014-08-12

    We report that 3,4,3-LI(1,2-HOPO) is a chelating ligand and decorporation agent that can remove radioactive lanthanides and actinides from the body. Identification of trace impurities in drug samples is gaining much interest due to their significant influence on drug activity. In this study, trace impurities were detected in manufactured lots of 3,4,3-LI(1,2-HOPO) by a developed method of Liquid Chromatography coupled with photo-diode array UV detection and Electrospray Ionization-Quadrupole Time of Flight Mass spectrometry (LC-QTOFMS), via induced-in-source or collision-induced mass fragmentation (Nozzle-Skimmer Fragmentation). Molecular ions were fragmented within the nozzle-skimmer region of electrospray ionization (ESI) mass spectrometer equipped with a Time of Flight detector. Eight major (detected at levels higher than a 0.1% threshold) and seven minor trace impurities were identified. The respective structures of these impurities were elucidated via analysis of the generated fragment ions using mass fragmentation and elemental composition software. Proposed structures of impurities were further confirmed via isotopic modeling.

  8. Identification of process related trace level impurities in the actinide decorpration agent 3,4,3-LI(1,2-HOPO): Nozzle-Skimmer fragmentation via ESI LC-QTOFMS

    PubMed Central

    Panyala, Nagender R.; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J.

    2014-01-01

    3,4,3-LI(1,2-HOPO) is a chelating ligand and decorporation agent that can remove radioactive lanthanides and actinides from the body. Identification of trace impurities in drug samples is gaining much interest due to their significant influence on drug activity. In this study, trace impurities were detected in manufactured lots of 3,4,3-LI(1,2-HOPO) by a developed method of Liquid Chromatography coupled with photo-diode array UV detection and Electrospray Ionization-Quadrupole Time of Flight Mass spectrometry (LC-QTOFMS), via induced-in-source or collision-induced mass fragmentation (Nozzle-Skimmer Fragmentation). Molecular ions were fragmented within the nozzle-skimmer region of electrospray ionization (ESI) mass spectrometer equipped with a Time of Flight detector. Eight major (detected at levels higher than a 0.1% threshold) and seven minor trace impurities were identified. The respective structures of these impurities were elucidated via analysis of the generated fragment ions using mass fragmentation and elemental composition software. Proposed structures of impurities were further confirmed via isotopic modeling. PMID:25165012

  9. Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Venkatesan, S.; Pierret, R. F.; Qiu, J.; Kobayashi, M.; Gunshor, R. L.; Kolodziejski, L. A.

    1989-10-01

    Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.

  10. Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

    NASA Astrophysics Data System (ADS)

    Mooney, P. M.; Tarun, Marianne; Beaton, D. A.; Mascarenhas, A.; Alberi, K.

    2016-08-01

    Dilute GaAs1-xBix alloys exhibiting narrow band edge photoluminescence (PL) were recently grown by molecular beam epitaxy (MBE) with the growth surface illuminated by intense UV radiation. To investigate whether the improved optical quality of these films results from a reduction in the concentration of deep level defects, p+/n and n+/p junction diodes were fabricated on both the illuminated and dark areas of several samples. Deep Level Transient Spectroscopy (DLTS) measurements show that the illuminated and dark areas of both the n- and p-type GaAs1-xBix epi-layers have similar concentrations of near mid-gap electron and hole traps, in the 1015 cm-3 range. Thus the improved PL spectra cannot be explained by a reduction in non-radiative recombination at deep level defects. We note that carrier freeze-out above 35 K is significantly reduced in the illuminated areas of the p-type GaAs1-xBix layers compared to the dark areas, allowing the first DLTS measurements of defect energy levels close to the valence band edge. These defect levels may account for differences in the PL spectra from the illuminated and dark areas of un-doped layers with a similar Bi fraction.

  11. Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

    NASA Astrophysics Data System (ADS)

    Mooney, P. M.; Tarun, Marianne; Beaton, D. A.; Mascarenhas, A.; Alberi, K.

    2016-08-01

    Dilute GaAs1‑xBix alloys exhibiting narrow band edge photoluminescence (PL) were recently grown by molecular beam epitaxy (MBE) with the growth surface illuminated by intense UV radiation. To investigate whether the improved optical quality of these films results from a reduction in the concentration of deep level defects, p+/n and n+/p junction diodes were fabricated on both the illuminated and dark areas of several samples. Deep Level Transient Spectroscopy (DLTS) measurements show that the illuminated and dark areas of both the n- and p-type GaAs1‑xBix epi-layers have similar concentrations of near mid-gap electron and hole traps, in the 1015 cm‑3 range. Thus the improved PL spectra cannot be explained by a reduction in non-radiative recombination at deep level defects. We note that carrier freeze-out above 35 K is significantly reduced in the illuminated areas of the p-type GaAs1‑xBix layers compared to the dark areas, allowing the first DLTS measurements of defect energy levels close to the valence band edge. These defect levels may account for differences in the PL spectra from the illuminated and dark areas of un-doped layers with a similar Bi fraction.

  12. Investigation of deep level defects in copper irradiated bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Madhu, K. V.; Kumar, Ravi; Ravindra, M.; Damle, R.

    2008-08-01

    Commercial bipolar junction transistor (2N 2219A, npn) irradiated with 150 MeV Cu11+-ions with fluence of the order 1012 ions cm-2, is studied for radiation induced gain degradation and deep level defects. I-V measurements are made to study the gain degradation as a function of ion fluence. The properties such as activation energy, trap concentration and capture cross-section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap levels with energies ranging from EC - 0.164 eV to EC - 0.695 eV are observed in the base-collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from EV + 0.203 eV to EV + 0.526 eV. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 350 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation.

  13. Deep-level dominated electrical characteristics of Au contacts on beta-SiC

    NASA Technical Reports Server (NTRS)

    Das, K.; Kong, H. S.; Petit, J. B.; Bumgarner, J. W.; Davis, R. F.; Matus, L. G.

    1990-01-01

    Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.

  14. Reference design and operations for deep borehole disposal of high-level radioactive waste.

    SciTech Connect

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-10-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  15. Analytical advances in pharmaceutical impurity profiling.

    PubMed

    Holm, René; Elder, David P

    2016-05-25

    Impurities will be present in all drug substances and drug products, i.e. nothing is 100% pure if one looks in enough depth. The current regulatory guidance on impurities accepts this, and for drug products with a dose of less than 2g/day identification of impurities is set at 0.1% levels and above (ICH Q3B(R2), 2006). For some impurities, this is a simple undertaking as generally available analytical techniques can address the prevailing analytical challenges; whereas, for others this may be much more challenging requiring more sophisticated analytical approaches. The present review provides an insight into current development of analytical techniques to investigate and quantify impurities in drug substances and drug products providing discussion of progress particular within the field of chromatography to ensure separation of and quantification of those related impurities. Further, a section is devoted to the identification of classical impurities, but in addition, inorganic (metal residues) and solid state impurities are also discussed. Risk control strategies for pharmaceutical impurities aligned with several of the ICH guidelines, are also discussed.

  16. Investigation of deep level defects in CdTe thin films

    SciTech Connect

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  17. Comparison of density functionals for nitrogen impurities in ZnO

    NASA Astrophysics Data System (ADS)

    Sakong, Sung; Gutjahr, Johann; Kratzer, Peter

    2013-06-01

    Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge transfer level of impurities in the wide-gap semiconductor ZnO. While the generalized gradient approximation fails to describe the electronic structure of the N impurity in ZnO correctly, methods that widen the band gap of ZnO by introducing additional non-local potentials yield the formation energy and charge transfer level of the impurity in reasonable agreement with hybrid functional calculations. Summarizing the results obtained with different methods, we corroborate earlier findings that the formation of substitutional N impurities at the oxygen site in ZnO from N atoms is most likely slightly endothermic under oxygen-rich preparation conditions, and introduces a deep level more than 1 eV above the valence band edge of ZnO. Moreover, the comparison of methods elucidates subtle differences in the predicted electronic structure, e.g., concerning the orientation of unoccupied orbitals in the crystal field and the stability of the charged triplet state of the N impurity. Further experimental or theoretical analysis of these features could provide useful tests for validating the performance of DFT methods in their application to defects in wide-gap materials.

  18. Comparison of density functionals for nitrogen impurities in ZnO.

    PubMed

    Sakong, Sung; Gutjahr, Johann; Kratzer, Peter

    2013-06-21

    Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge transfer level of impurities in the wide-gap semiconductor ZnO. While the generalized gradient approximation fails to describe the electronic structure of the N impurity in ZnO correctly, methods that widen the band gap of ZnO by introducing additional non-local potentials yield the formation energy and charge transfer level of the impurity in reasonable agreement with hybrid functional calculations. Summarizing the results obtained with different methods, we corroborate earlier findings that the formation of substitutional N impurities at the oxygen site in ZnO from N atoms is most likely slightly endothermic under oxygen-rich preparation conditions, and introduces a deep level more than 1 eV above the valence band edge of ZnO. Moreover, the comparison of methods elucidates subtle differences in the predicted electronic structure, e.g., concerning the orientation of unoccupied orbitals in the crystal field and the stability of the charged triplet state of the N impurity. Further experimental or theoretical analysis of these features could provide useful tests for validating the performance of DFT methods in their application to defects in wide-gap materials. PMID:23802971

  19. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    NASA Astrophysics Data System (ADS)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-12-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  20. Trace level impurity method development with high-field asymmetric waveform ion mobility spectrometry: systematic study of factors affecting the performance.

    PubMed

    Champarnaud, Elodie; Laures, Alice M-F; Borman, Phil J; Chatfield, Marion J; Kapron, James T; Harrison, Mark; Wolff, Jean-Claude

    2009-01-01

    For the determination of trace level impurities, analytical chemists are confronted with complex mixtures and difficult separations. New technologies such as high-field asymmetric waveform ion mobility spectrometry (FAIMS) have been developed to make their work easier; however, efficient method development and troubleshooting can be quite challenging if little prior knowledge of the factors or their settings is available. We present the results of an investigation performed in order to obtain a better understanding of the FAIMS technology. The influence of eight factors (polarity of dispersion voltage, outer bias voltage, total gas flow rate, composition of the carrier gas (e.g. %He), outer electrode temperature, ratio between the temperatures of the inner and outer electrodes, flow rate and composition of the make-up mobile phase) was assessed. Five types of responses were monitored: value of the compensation voltage (CV), intensity, width and asymmetry of the compensation voltage peak, and resolution between two peaks. Three types of studies were performed using different test mixtures and various ionisation modes to assess whether the same conclusions could be drawn across these conditions for a number of different types of compounds. To extract the maximum information from as few experiments as possible, a Design of Experiment (DoE) approach was used. The results presented in this work provide detailed information on the factors affecting FAIMS separations and therefore should enable the user to troubleshoot more effectively and to develop efficient methods. PMID:19065601

  1. Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence

    NASA Astrophysics Data System (ADS)

    Spindler, Conrad; Regesch, David; Siebentritt, Susanne

    2016-07-01

    Recent defect calculations suggest that the open circuit voltage of CuGaSe2 solar cells can be limited by deep intrinsic electron traps by GaCu antisites and their complexes with Cu-vacancies. To gain experimental evidence, two radiative defect transitions at 1.10 eV and 1.24 eV are characterized by steady-state photoluminescence on epitaxial-grown CuGaSe2 thin films. Cu-rich samples are studied, since they show highest crystal quality, exciton luminescence, and no potential fluctuations. Variations of the laser intensity and temperature dependent measurements suggest that emission occurs from two deep donor-like levels into the same shallow acceptor. At 10 K, power-law exponents of 1 (low excitation regime) and 1/2 (high excitation regime) are observed identically for both transitions. The theory and a fitting function for the double power law is derived. It is concluded that the acceptor becomes saturated by excess carriers which changes the exponent of all transitions. Activation energies determined from the temperature quenching depend on the excitation level and show unexpected values of 600 meV and higher. The thermal activation of non-radiative processes can explain the distortion of the ionization energies. Both the deep levels play a major role as radiative and non-radiative recombination centers for electrons and can be detrimental for photovoltaic applications.

  2. Large lattice relaxation deep levels in neutron-irradiated GaN

    SciTech Connect

    Li, S.; Zhang, J.D.; Beling, C.D.; Wang, K.; Wang, R.X.; Gong, M.; Sarkar, C.K.

    2005-11-01

    Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at E{sub C}-E{sub T}=0.17 eV. Another line, labeled as N2, at E{sub C}-E{sub T}=0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out.

  3. Investigation of the origin of deep levels in CdTe doped with Bi

    SciTech Connect

    Saucedo, E.; Franc, J.; Elhadidy, H.; Horodysky, P.; Ruiz, C. M.; Bermudez, V.; Sochinskii, N. V.

    2008-05-01

    Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 10{sup 17}-10{sup 19} at./cm{sup 3}. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.

  4. Spectral properties of superconductors with ferromagnetically ordered magnetic impurities

    NASA Astrophysics Data System (ADS)

    Persson, Daniel; Shevtsov, Oleksii; Löfwander, Tomas; Fogelström, Mikael

    2015-12-01

    We present a comprehensive theoretical study of thermodynamic properties of superconductors with a dilute concentration of magnetic impurities, with focus on how the properties of the superconducting host change if the magnetic moments of the impurities order ferromagnetically. Scattering off the magnetic impurities leads to the formation of a band of Yu-Shiba-Rusinov states within the superconducting energy gap that drastically influences superconductivity. In the magnetically ordered system, the magnetization displays a sudden drop as a function of the impurity density or magnetic moment amplitude. The drop occurs as the spin-polarized impurity band crosses the Fermi level and is associated with a quantum phase transition first put forward by Sakurai for the single impurity case. Taking into account that the background magnetic field created by the ordered impurity moments enters as a Zeeman shift, we find that the superconducting phase transition changes from second order to first order for high enough impurity concentrations.

  5. Impurity transport in Tokamaks

    NASA Astrophysics Data System (ADS)

    Amano, T.

    1983-12-01

    Theoretical and experimental efforts directed towards gaining an understanding of impurity behavior in Tokamaks are reviewed. In the Alcator Tokamak experiments, a laser blow-off technique was used to introduce trace amounts of impurities into ohmically heated plasmas. After a series of experiments in which they injected Si, Al, Fe, Mo impurities, an equation representing empirical impurity confinement time was derived. The scaling of this equation was compared with the results of impurity injection experiments on other Tokamaks, FT-I, PDX, TFR, ISX-B. Impurity confinement times in all these cases agree remarkably well, except for the TFR confinement times, which were about a factor of two larger than predicted. In the presence of intense neutral beam injection impurity ions behave differently. Specifically, in the ISX-B experiments, a marked accumulation of impurity ions toward the center of the plasma was observed in the case of counter neutral beam injection. This was interpreted semi-quantitatively by the neoclassical effect of the rotation of the plasma driven by the neutral beam.

  6. Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Kada, W.; Kambayashi, Y.; Ando, Y.; Onoda, S.; Umezawa, H.; Mokuno, Y.; Shikata, S.; Makino, T.; Koka, M.; Hanaizumi, O.; Kamiya, T.; Ohshima, T.

    2016-04-01

    To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

  7. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    SciTech Connect

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  8. Behavior of the Fe impurity in Hg{sup 3}In{sup 2}Te{sup 6} crystals

    SciTech Connect

    Grushka, O. G. Savchuk, A. I.; Chupyra, S. N.; Bilichuk, S. V.

    2015-07-15

    Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at E{sup c}–0.69 eV in Hg{sup 3}In{sup 2}Te{sup 6} crystals. When light is absorbed by Fe{sup 2+} impurity centers, both electronic transitions of the impurity-level–conduction-band type and optical transitions between ground and excited states of the aforementioned centers (intracenter transitions) are observed. Investigations of transport phenomena point to the acceptor properties of Fe{sup 2+} centers.

  9. Springback assessment based on level set interpolation and shape manifolds in deep drawing

    NASA Astrophysics Data System (ADS)

    Le Quilliec, Guenhael; Raghavan, Balaji; Breitkopf, Piotr; Rassineux, Alain; Villon, Pierre; Roelandt, Jean-Marc

    2013-12-01

    In this paper, we introduce an original shape representation approach for automatic springback characterization. It is based on the generation of parameterized Level Set functions. The central idea is the concept of the shape manifold representing the design domain in the reduced-order shape-space. Performing Proper Orthogonal Decomposition on the shapes followed by using the Diffuse Approximation allows us to efficiently reduce the problem dimensionality and to interpolate uniquely between admissible input shapes, while also determining the smallest number of parameters needed to characterize the final formed shape. We apply this methodology to the problem of springback assessment for the deep drawing operation of metal sheets.

  10. Deep-level magma dehydration and ascent rates at Mt. Etna (Sicily, Italy)

    NASA Astrophysics Data System (ADS)

    Armienti, P.; Perinelli, C.; Putirka, K.

    2012-04-01

    Magma ascent velocity, v (dH/dt; H = depth, t = time),can be determined from ascent rate (dP/dt), and rate of cooling (dT/dt): v= 1/(rgpg) (dP/dT)(dT/dt) where r is magma density, P is pressure, T is temperature and g is the acceleration of gravity. This equation for v provides a key to investigating the relationships between initial ascent rate of magma and the depths of magma dehydration, and v can be calculated using pressure and temperature (P - PH2O - T) estimates from mineral-liquid thermobarometry, and cooling rates inferred from Crystal Size Distribution (CSD) theory. For recent Mt. Etna lava flows, both dP/dT and dT/dt have been well characterized based, respectively, on clinopyroxene thermobarometry, and clinopyroxene CSDs (the latter yields dT/dt = 2x10-6 °C/s). Deep-level (>20 km) magma ascent rates range from practically 0 (where clinopyroxene P - T estimates form a cluster, and so dP/dT ≈ 0), to about 10 m/hr for flows that yield very steep P - T trajectories. Many lava flows at Mt. Etna yield P - T paths that follow a hydrous (about 3% water) clinopyroxene saturation surface, which closely approximates water contents obtained from melt inclusions. Independent assessments of deep level water content yield ascent rates of ~1 m/hr, in agreement with the slowest rates derived for magma effusion or vapor-driven ascent (~0.001 to >0.2 m/s, or 3.6 to 720 m/hr). Changes in P - T slopes, as obtained by pyroxene thermobarometry, indicate an upward acceleration of magma, which may be due to the onset of deep-level magma dehydration linked to the non-ideal behavior of water and CO2 mixtures that induce a deep-level maximum of water loss at P ≈ 0.4 MPa at T ≈ 1200 ° C for a CO2 content >1000ppm. Melt inclusion data on CO2 and H2O contents are successfully reproduced and interpreted in a context of magma dehydration induced by a CO2 flux possibly deriving by decarbonation reaction of the carbonate fraction of the Capo D'Orlando flysch.

  11. Deep level transient spectroscopy study in n-type InP

    NASA Astrophysics Data System (ADS)

    Lim, H.; Sagnes, G.; Bastide, G.; Rouzeyre, M.

    1982-04-01

    This paper reports the results of a Deep Level Transient Spectroscopy (DLTS) study on 14 InP diodes fabricated from five different crystals. From 16 observed DLTS peaks and corresponding Arrhenius plots, seven (or eight) trapping levels have been identified whose characteristics are as follows: Trapping levels Characteristics E1 = 210 meV S1 = 3×10-16 cm2 E2 = 190 mev S2 = 7×10-19 cm2 E3 = 330 meV S3 = 4×10-16 cm2 E4 = 500 meV S4 = 2×10-12 cm2 E5 = 410 mev S5 = 1×10-16 cm2 E6 = 630 meV S6 = 2×10-14 cm2 E7 = 330 meV S7 = 5×10-14 cm2

  12. Halogenated persistent organic pollutants in relation to trophic level in deep sea fish.

    PubMed

    Webster, Lynda; Russell, Marie; Walsham, Pam; Hussy, Ines; Lacaze, Jean-Pierre; Phillips, Lesley; Dalgarno, Eric; Packer, Gill; Neat, Francis; Moffat, Colin F

    2014-11-15

    The bioaccumulation of persistent organic pollutants (POPs) in deep sea fish from the Rockall fishing area was investigated. Predator and prey species were analysed for stable isotopes, fatty acids, polychlorinated biphenyls (PCBs) and polybrominated diphenyl ethers (PBDEs). δ(15)N indicated that black scabbard was at the highest trophic level and the prey the lowest. The fatty acid signatures indicated that black scabbard and black dogfish fed at a higher trophic level compared to the roundnose grenadier. PCBs and PBDEs were detected in the liver of all three predator species. PCB concentrations were significantly higher in the roundnose grenadier, possibly due to their longer life span. PCB concentrations were compared to OSPAR assessment criteria, concentrations were above background but below Environmental Assessment Criteria for all but one congener. PCB concentrations were below food safety levels in the flesh, but exceeded the limit for liver in the roundnose grenadier and black dogfish.

  13. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  14. Anisotropic electric-field-enhanced electron emission from deep-level defects in GaAs

    NASA Astrophysics Data System (ADS)

    Tsarova, Tatsiana; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew

    2009-10-01

    Strongly anisotropic electric-field enhancements of the thermal emission rates of electrons from the EL3 and EL5 deep-level defects in n-type GaAs crystal have been revealed with the double-correlation deep-level transient spectroscopy. The results, analysed by taking into account both the Poole-Frenkel and phonon-assisted tunnel effects, evidence a strong coupling of the defects to the lattice vibronic modes. The defect potential anisotropy of EL3 is consistent with the defect identification as an off-centre substitutional oxygen on the arsenic site. The revealed surprising break-down of the emission-rate enhancement, for the electric field applied along the lang1 0 0rang crystallographic direction, is interpreted as resulting from a possible reorientation of the EL3 defect, owing to a jump of the oxygen ion into a neighbouring lattice site, driven by a strong electric field. On the other hand, a close pair divacancy complex is suggested to be responsible for the EL5 defect.

  15. Sea-level and deep-sea-temperature variability over the past 5.3 million years.

    PubMed

    Rohling, E J; Foster, G L; Grant, K M; Marino, G; Roberts, A P; Tamisiea, M E; Williams, F

    2014-04-24

    Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (δ(18)O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. Here we present a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. We find that deep-sea temperature and sea level generally decreased through time, but distinctly out of synchrony, which is remarkable given the importance of ice-albedo feedbacks on the radiative forcing of climate. In particular, we observe a large temporal offset during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. Last, we tentatively infer that ice sheets may have grown largest during glacials with more modest reductions in deep-sea temperature.

  16. Impact of structural defect density on gettering of transition metal impurities during phosphorus emitter diffusion in multi-crystalline silicon solar cell processing

    NASA Astrophysics Data System (ADS)

    Park, Yongkook; Lu, Jinggang; Park, Jin-Hong; Rozgonyi, George

    2015-07-01

    The impact of structural defect density on gettering of transition metal impurities during phosphorous emitter diffusion has been investigated using a pair of multi-crystalline silicon (mc-Si) wafers. Chromium (Cr) impurities incorporated during growth were identified by deep level transient spectroscopy (DLTS) and used to evaluate the gettering efficiency. The Cr impurity concentration in the low defect density region of mc-Si wafers was reduced from ~3.5 × 1013 cm-3 to ~1.7 × 1012 cm-3 after phosphorous diffusion gettering (PDG), while for the high defect density region, there is no appreciable variation in the Cr concentration which only changed from ~3.0 to ~2.2 × 1012 cm-3 following PDG. It was concluded that the gettering process is not effective for highly defective regions of mc-Si wafers due to the ineffective impurity release from structural defects during the PDG process. [Figure not available: see fulltext.

  17. Constraints on sea level during the Pliocene: Records from the deep Pacific Ocean

    NASA Astrophysics Data System (ADS)

    Woodard, S. C.; Rosenthal, Y.; Miller, K. G.; Wright, J. D.; Chiu, B. K.

    2013-12-01

    To reconstruct sea level during the transition from peak late Pliocene warmth (~3.15 Ma) to the onset of N. Hemisphere glaciation (~2.75 Ma), we generated high resolution stable isotope (δ18O, δ13C) and trace metal (Mg/Ca) records using benthic foraminifera, Uvigerina sp., from northwest Pacific ODP Site 1208 (3350 m water depth). During the peak late Pliocene warmth Mg/Ca-derived temperature records indicate deep Pacific interglacial temperatures were not significantly warmer (+0.6 ×0.8°C) than modern and glacial temperatures were near freezing similar to the LGM. In contrast, the deep N. Atlantic (Site 607) was apparently ~3°C warmer than the modern during both Pliocene glacial and interglacial periods (Sosdian and Rosenthal, 2009), based on the Mg/Ca of P. wuellerstorfi, which may be influenced by carbonate ion effect (Elderfield et al., 2009 and refs therein). δ18O records indicate a significant long-term increase in benthic δ18O in both the N. Atlantic and N. Pacific, although the rate of increase (Δδ18O) in the N. Atlantic is approximately 3x that of the N. Pacific (Site 1208), based on least squares regressions of all glacial-interglacial data. The discrepancy in the Δδ18O between the two basins is explained by Mg/Ca-derived temperature records. Results from Site 1208 show that the deep Pacific experienced no long-term cooling over the period 3.15-2.7 Ma when the deep N. Atlantic cooled by ~2.5°C on average. The relatively stable Pacific deep-water record provides the more reliable reconstructions of sea-level changes. From 3.15-2.7 Ma, Pacific δ18O data records an average increase of ~0.19× 0.08 per mil implying a sea level drop of 19 m × 8 m. After correcting the N. Atlantic record for temperature, we find the long term δ18O change from 3.15-2.7 Ma is ~0.23×0.1 per mil which equates to a peak of 23 m × 10 m. Our estimates are further corroborated by foraminiferal calcite δ18O recorded during Pliocene peak interglacials KM3 and G17. The

  18. Influences of Nickel and Vanadium Impurities on Microstructure of Aluminum Alloys

    NASA Astrophysics Data System (ADS)

    Zhu, Suming; Yao, Ji-Yong; Sweet, Lisa; Easton, Mark; Taylor, John; Robinson, Paul; Parson, Nick

    2013-05-01

    In recent years, the deterioration in the available coke quality for anode production has led to increased levels of metal impurities such as nickel and vanadium in primary aluminum. There is growing concern from the industry with regard to the impact of increased Ni and V levels on the downstream properties of Al alloy products. This article presents a detailed investigation of the influences of Ni and V impurities on microstructure of three common Al alloys, i.e., AA6063, AA3102, and A356, in both as-cast and heat-treated conditions. The characterization techniques employed include scanning electron microscopy, electron backscattered diffraction, energy-dispersive x-ray spectroscopy, wavelength-dispersive spectroscopy, and transmission electron microscopy. It is shown that the phase constituents of AA6063 are not altered by Ni additions up to 0.05% or V additions up to 0.04%. Whereas there is no change in phase constituents with increasing Ni up to 0.015% for AA3102, the addition of 0.05% Ni seems to have significant influence on the microstructure. For A356, Ni additions up to 0.02% do not seem to have significant influence on the microstructure, but a new phase with significantly high Ni content is formed when the Ni impurity level is increased to 0.05%. The deep insight obtained in this work should be helpful to understand the influences of Ni and V impurities on properties of Al alloys.

  19. Effects of Pressure on Optically Active Deep Levels in Phosphorus Doped ZnSe

    NASA Astrophysics Data System (ADS)

    Weinstein, B. A.; Iota, V.

    1998-03-01

    We report high pressure photoluminescence (PL) and PL-excitation (PLE) studies at 8K of the 'midgap' emission in P-doped ZnSe using a diamond-cell with He medium. The dominant emission at low pressure is due to donor-acceptor-pair (DAP) transitions between shallow donors and deep trigonally relaxed P_Se acceptors.(J. Davies, et al., J. Luminescence 18/19, 322 (1979)) Its PL and PLE peaks shift by 8.2meV/kbar and 5.9meV/kbar, respectively -- Stokes shift decreasing with pressure. At 35kbar a new PL band, shifting to lower energy (-5.4meV/kbar), emerges from above the absorption edge, and concurrently the original DAP PL quenches. This shows that a resonant level, a deep donor or possibly a P_Se antibonding state,(R. Watts, et al., Phys. Rev. B3), 404 (1971) crosses the conduction edge into the gap. A third PL band is seen only with internse UV excitation. It occurs initially as a high energy shoulder of the original DAP peak, but shifts more rapidly upward (9.4meV/kbar) until it crosses the edge and quenches at 40kbar. We discuss candidates for this band, including donor-P_Se complexes, and we compare our results to similar work on the Zn vacancy in ZnSe. (figures)

  20. Deep level study of cadmium sulfide/cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Komin, Valery Vitalyevich

    The goal of this project is to develop a reliable approach to characterize defects in CdTe/CdS solar cells, taking into account the requirements dictated by the polycrystallinity of the device materials, to characterize solar cells prepared in different processing conditions, to develop an understanding on how processing variations correlate with changes in the overall device performance and stability, and to develop recommendations on the optimization of processing conditions based on this analysis. Polycrystalline CdTe/CdS solar cells were studied using double boxcar deep level transient spectroscopy (DLTS) and correlation DLTS measurements to investigate the effect of the post-growth CdCl2 heat treatment, and the effect of the HgTe:Cu-doped graphite and Ni2P-based back contacts. The limitations of each deep-level characterization technique dictated by the polycrystalline nature of the CdTe/CdS heterostructure, were taken in consideration. Dark C-V, dark and illuminated J-V measurements were performed in order to monitor changes in the solar cell parameters during the deep level studies. To avoid issues associated with the metastability of some defects, all experiments were performed in the dark. Twelve traps were detected in the temperature range from 90K to 360K. Preliminary solar cell simulations using AMPS-1D were used to help understand the role of these traps in the current transport mechanism and the impact of their presence on the overall device performance. A donor-like defect with activation energy EA = 0.140 eV was identified as a chlorine-related DX2-state of (VCd2--ClTe+) complex. Its presence in the CdTe layer was associated with significant degradation of overall solar cell performance. An acceptor-like defect with activation energy EA = 0.350 was identified as a defect Cu Cd- or complex (Cui+-2Cu Cd-)-. Recommendations for processing condition optimization are made based on the results of this study.

  1. Intrinsic deep hole trap levels in Cu2O with self-consistent repulsive Coulomb energy

    NASA Astrophysics Data System (ADS)

    Huang, Bolong

    2016-03-01

    The large error of the DFT+U method on full-filled shell metal oxides is due to the residue of self-energy from the localized d orbitals of cations and p orbitals of the anions. U parameters are selfconsistently found to achieve the analytical self-energy cancellation. The improved band structures based on relaxed lattices of Cu2O are shown based on minimization of self-energy error. The experimentally reported intrinsic p-type trap levels are contributed by both Cu-vacancy and the O-interstitial defects in Cu2O. The latter defect has the lowest formation energy but contributes a deep hole trap level while the Cuvacancy has higher energy cost but acting as a shallow acceptor. Both present single-particle levels spread over nearby the valence band edge, consistent to the trend of defects transition levels. By this calculation approach, we also elucidated the entanglement of strong p-d orbital coupling to unravel the screened Coulomb potential of fully filled shells.

  2. Physical characterization of deep bulk levels by the MOS conductance technique

    NASA Astrophysics Data System (ADS)

    Conti, M.; Fischetti, M. V.; Gastaldi, R.

    1982-01-01

    The a.c. response of SRH centers in the bulk silicon of an MOS capacitor is reconsidered in the case of traps far from midgap for which the dominant dissipative process is the a.c. delay in capture and emission of majority carriers. Following the Nicollian and Goetzberger's scheme the MOS admittance is calculated in the whole range of biases starting from a model equivalent circuit in which minority carriers are supposed to be disconnected from the bulk. Henceforth the conductance technique can be employed to characterize the deep bulk levels not only in strong inversion, as previously done by others Authors, but also in the depletion-weak inversion mode. This extension is accomplished without the need of extensive numerical computation and makes it possible to obtain from measurements performed at room temperature the physical parameters of the SRH centers, including their energy level and, in principle, their degeneracy factor. Results of measurements performed on <1, 0, 0>-oriented, CZ and FZ grown wafers are presented. Good correlation is obtained between theory and experiment for the trap conductance as a function of frequency at different values of the surface potential. The deduced density of SRH centers and energy level are also confirmed by DLTS and transient current measurements. Finally, evidence is reported for the existence of a two level trap, probably related to oxygen, in commercial CZ wafers.

  3. Promoting and Studying Deep-Level Discourse During Large-Lecture Introductory Physics

    NASA Astrophysics Data System (ADS)

    Li, Sissi; Demaree, Dedra

    2010-10-01

    At Oregon State University, the introductory calculus-based physics sequence utilizes social engagement as a learning tool. The reformed curriculum is modeled after the Interactive Science Learning Environment from Rutgers University, and makes use of Peer Instruction as a pedagogical tool to facilitate interactions. Over the past two years we have utilized a number of techniques to understand how to facilitate activities that promote productive discussion within the large lecture classroom. We specifically seek student discussion that goes beyond agreement on conceptual questions, encouraging deeper discussions such as what assumptions are appropriate, or how different assumptions would change the chosen answer to a given question. We have quantitative analysis of engagement based on video data, qualitative analysis of dialogue from audio data, and classroom observations by an external researcher. In this paper we share a subset of what we have learned about how to engage students in deep-level discussions during lecture.

  4. Deep level defect luminescence in cadmium selenide nano-crystals films

    NASA Astrophysics Data System (ADS)

    Babentsov, V.; Riegler, J.; Schneider, J.; Ehlert, O.; Nann, T.; Fiederle, M.

    2005-07-01

    Undoped CdSe monocrystals and CdSe nano-crystals films have been studied at various temperatures by continuous wave (cw) photoluminescence. We report on a characteristic deep level emission, which is consistently observed in the wurtzite bulk- and nanocrystalline forms of CdSe. Two broad luminescence bands, which are separated from the excitonic emission by 0.5 and 0.7 eV occur in CdSe, prepared by quite different techniques. These bands experience, similar to the excitonic emission, a spectral shift to high energy enforced by the quantum confinement in nano-CdSe. The defects responsible for this luminescence are probably two different VCd- VSe divacancies: one is oriented along the hexagonal c-axis, the other is oriented along the basal Cd-Se bond directions.

  5. Numerical simulation of transient emission from deep level traps in polysilicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Armstrong, G. A.; Ayres, J. R.; Brotherton, S. D.

    1997-06-01

    Numerical simulation was used to model transient carrier emission from deep level traps in polycrystalline silicon (poly-Si) thin film transistors and to validate the analytical approximations used to interpret DLTS measurements. Transient emission from a single trap was compared with that from a continuous density of states. Numerical simulation was used to quantify the degree of error in the analytical analysis and show that it yields substantially correct values for a typical double exponential poly-Si trap state density as a function of energy, to within ± 10%. The major source of discrepancy was associated with the omission of the effects of displacement current from the analytical analysis. The DLTS spectra associated with a constant density of states was shown to give a decreasing signal with decreasing temperature, while that of an exponential density of states was found to be essentially flat.

  6. Thermal Hydrology Modeling of Deep Borehole Disposal of High-Level Radioactive Waste

    NASA Astrophysics Data System (ADS)

    Hadgu, T.; Arnold, B. W.

    2010-12-01

    Disposal of high-level radioactive waste, including spent nuclear fuel, in deep (3 to 5 km) boreholes is a potential option for safely isolating these wastes. Existing drilling technology permits reliable and cost-effective construction of such deep boreholes. Conditions favorable for deep borehole disposal in crystalline basement rocks, including low permeability, high salinity, and geochemically reducing conditions, exist at depth in many locations. Coupled thermal-hydrologic processes induced by heat from the radioactive waste may impact fluid flow and the associated migration of radionuclides. Numerical simulations of thermal hydrology in the deep borehole disposal system were carried out with waste emplaced between depths of 3 km and 5 km. The geometry of the system consisted of a disturbed zone of higher permeability within a radius of 1m from the borehole, and low permeability rock beyond the 1m radius. The simulations considered borehole spacing of 100m and 200m, and number of boreholes of 1, 9 and 25. The base case was taken to be 9 boreholes with 200m borehole spacing. Simulations were conducted for disposal of spent nuclear fuel assemblies and for the higher heat output of vitrified waste from the reprocessing of fuel. Physical, thermal, and hydrologic properties representative of granite host rock at a depth of 4 km were used in the models. The simulations studied temperature and fluid flux in the vicinity of the boreholes. The results show that for all runs single phase liquid conditions persist throughout the model area due to the large hydrostatic pressures present at the specified depths. Simulated base case temperatures for fuel assemblies and vitrified waste showed peak temperature increases of about 30 °C and 180 °C, respectively. Temperatures near the boreholes peak within about 10 years of waste emplacement. Results show minimal thermal perturbations at depths above the top of the waste, for both types of radioactive waste. Axial temperature

  7. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  8. Effect of Z{sub 1/2}, EH{sub 5}, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

    SciTech Connect

    Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mandal, Krishna C.

    2014-06-14

    Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z{sub 1/2}, EH{sub 5}, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z{sub 1/2} defects was found to be 1.7 × 10{sup 13} cm{sup −3}. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm{sup 2} large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.

  9. Model Analysis of Low-Level Actinide Waste Disposal in Deep Boreholes

    NASA Astrophysics Data System (ADS)

    Glascoe, L. G.; Wolfsberg, A. V.

    2001-12-01

    Deep borehole disposal is considered as a possible mechanism for the safe removal of Greater Than Class C (GTCC) low level actinide waste (Am-241, Pu-239, and Pu-238). Of the three actinides in GTCC waste, only Pu-239 has a half-life greater than 500 years and, thus, will have the longest environmental presence. However, Am-241 and Pu-238 have the potential to create most of the heat associated with GTCC waste disposal in deep boreholes. Therefore, this study considers the nonisothermal release and subsequent migration toward a pumping well of the most persistent radionuclide, Pu-239, from a deep emplacement borehole taking into account the heat created by decay of all three actinides. The Finite-Element Heat- and Mass-Transfer code, FEHM, is employed to simulate three-dimensional, non-isothermal flow and solute transport using particle tracking. Multiple scenarios considering various source emplacement depths, aquifer properties, and hydraulic conditions are evaluated in a sensitivity analysis that seeks to demonstrate competing and offsetting processes affecting the concentration of Pu-239 in the pumped well 100 m down gradient from the borehole source. In general, lower groundwater fluxes, associated with lower gradients and/or lower aquifer permeabilities, lead to less dissolution of the source waste. However, conditions of decreasing groundwater flux also create larger sized capture zones by the pumping well, thus escalating the likelihood of pumping contaminants originating from a source deeper than the pumping well. Retardation by sorption of Pu-239, both in alluvial aquifers and following diffusion from fractures in a tuff aquifer, plays an important role both in delaying radionuclide migration and in reducing the peak aqueous concentration at the pumping well. This work was performed under the auspices of the U.S. Department of Energy by University of California Lawrence Livermore National Laboratory under contract No. W-7405-Eng-48. This work was

  10. Identifying a Threshold Impurity Level for Organic Solar Cells: Enhanced First-Order Recombination Via Well-Defined PC84BM Traps in Organic Bulk Heterojunction Solar Cells

    SciTech Connect

    Cowan, Sarah R.; Leong, Wei Lin; Banerji, Natalie; Dennler, Gilles; Heeger, Alan J.

    2011-06-21

    Small amounts of impurity, even one part in one thousand, in polymer bulk heterojunction solar cells can alter the electronic properties of the device, including reducing the open circuit voltage, the short circuit current and the fill factor. Steady state studies show a dramatic increase in the trap-assisted recombination rate when [6,6]-phenyl C₈₄ butyric acid methyl ester (PC₈₄BM) is introduced as a trap site in polymer bulk heterojunction solar cells made of a blend of the copolymer poly[N-9"-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole) (PCDTBT) and the fullerene derivative [6,6]-phenyl C₆₁ butyric acid methyl ester (PC₆₀BM). The trap density dependent recombination studied here can be described as a combination of bimolecular and Shockley–Read–Hall recombination; the latter is dramatically enhanced by the addition of the PC₈₄BM traps. This study reveals the importance of impurities in limiting the efficiency of organic solar cell devices and gives insight into the mechanism of the trap-induced recombination loss.

  11. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect

    Koblmueller, G.; Chu, R. M.; Raman, A.; Mishra, U. K.; Speck, J. S.

    2010-02-15

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  12. Deep Levels in p-Type InGaAsN Lattice Matched to GaAs

    SciTech Connect

    Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

    1999-03-02

    Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

  13. Renormalization-group calculation of excitation properties for impurity models

    NASA Astrophysics Data System (ADS)

    Yoshida, M.; Whitaker, M. A.; Oliveira, L. N.

    1990-05-01

    The renormalization-group method developed by Wilson to calculate thermodynamical properties of dilute magnetic alloys is generalized to allow the calculation of dynamical properties of many-body impurity Hamiltonians. As a simple illustration, the impurity spectral density for the resonant-level model (i.e., the U=0 Anderson model) is computed. As a second illustration, for the same model, the longitudinal relaxation rate for a nuclear spin coupled to the impurity is calculated as a function of temperature.

  14. Analysis of the effects of impurities in silicon

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J.; Giuliano, M. N.

    1980-01-01

    A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. It was found that certain impurities such as titanium, tantalum, and vanadium were bad, even in very small concentrations. Cell performance appeared relatively tolerable to impurities such as copper, carbon, calcium, chromium, iron and nickel (in the concentration levels which were considered).

  15. Development of an LC-MS method for ultra trace-level determination of 2,2,6,6-tetramethylpiperidine-1-oxl (TEMPO), a potential genotoxic impurity within active pharmaceutical ingredients.

    PubMed

    Pennington, Justin; Cohen, Ryan D; Tian, Ye; Boulineau, Fabien

    2015-10-10

    TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl) is a stable free radical which has been widely used for various research and industrial applications, including the manufacture of many active pharmaceutical ingredients. TEMPO has been identified as a potential genotoxic impurity resulting in the need for analytical methodology to accurately determine its level at several orders of magnitude less than typical impurity quantitation limits. TEMPO can undergo disproportionation to form both oxidized and reduced TEMPO, making individual determination unreliable. To overcome this challenge, all TEMPO related species were converted to the reduced form through reduction with sodium ascorbate. Given the ultra-trace (0.5 ppm) level requirements and the lack of UV response in the reduced form, a single quadrupole mass spectrometer (MS) was utilized. In order to implement a highly sensitive MS method in a GMP environment, several approaches were employed to optimize accuracy and robustness including: internal standard correction for drift elimination, six-level standard addition to reduce matrix effects, and weighted linear regression to cover a broad analytical range. The method was fully validated according to ICH guidelines. The method is specific, linear, accurate, precise, and robust within a range of 0.5-100 ppm.

  16. Challenges to Standardization: A Case Study Using Coastal and Deep-Ocean Water Level Data

    NASA Astrophysics Data System (ADS)

    Sweeney, A. D.; Stroker, K. J.; Mungov, G.; McLean, S. J.

    2015-12-01

    Sea levels recorded at coastal stations and inferred from deep-ocean pressure observations at the seafloor are submitted for archive in multiple data and metadata formats. These formats include two forms of schema-less XML and a custom binary format accompanied by metadata in a spreadsheet. The authors report on efforts to use existing standards to make this data more discoverable and more useful beyond their initial use in detecting tsunamis. An initial review of data formats for sea level data around the globe revealed heterogeneity in presentation and content. In the absence of a widely-used domain-specific format, we adopted the general model for structuring data and metadata expressed by the Network Common Data Form (netCDF). netCDF has been endorsed by the Open Geospatial Consortium and has the advantages of small size when compared to equivalent plain text representation and provides a standard way of embedding metadata in the same file. We followed the orthogonal time-series profile of the Climate and Forecast discrete sampling geometries as the convention for structuring the data and describing metadata relevant for use. We adhered to the Attribute Convention for Data Discovery for capturing metadata to support user search. Beyond making it possible to structure data and metadata in a standard way, netCDF is supported by multiple software tools in providing programmatic cataloging, access, subsetting, and transformation to other formats. We will describe our successes and failures in adhering to existing standards and provide requirements for either augmenting existing conventions or developing new ones. Some of these enhancements are specific to sea level data, while others are applicable to time-series data in general.

  17. Dynamical impurity problems

    SciTech Connect

    Emery, V.J.; Kivelson, S.A.

    1993-12-31

    In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class.

  18. A Prototype Performance Assessment Model for Generic Deep Borehole Repository for High-Level Nuclear Waste - 12132

    SciTech Connect

    Lee, Joon H.; Arnold, Bill W.; Swift, Peter N.; Hadgu, Teklu; Freeze, Geoff; Wang, Yifeng

    2012-07-01

    A deep borehole repository is one of the four geologic disposal system options currently under study by the U.S. DOE to support the development of a long-term strategy for geologic disposal of commercial used nuclear fuel (UNF) and high-level radioactive waste (HLW). The immediate goal of the generic deep borehole repository study is to develop the necessary modeling tools to evaluate and improve the understanding of the repository system response and processes relevant to long-term disposal of UNF and HLW in a deep borehole. A prototype performance assessment model for a generic deep borehole repository has been developed using the approach for a mined geological repository. The preliminary results from the simplified deep borehole generic repository performance assessment indicate that soluble, non-sorbing (or weakly sorbing) fission product radionuclides, such as I-129, Se-79 and Cl-36, are the likely major dose contributors, and that the annual radiation doses to hypothetical future humans associated with those releases may be extremely small. While much work needs to be done to validate the model assumptions and parameters, these preliminary results highlight the importance of a robust seal design in assuring long-term isolation, and suggest that deep boreholes may be a viable alternative to mined repositories for disposal of both HLW and UNF. (authors)

  19. Quantifying Multi-Objective Tradeoffs under Deep Uncertainty in the Design of Sea-Level Rise Adaptation Strategies

    NASA Astrophysics Data System (ADS)

    Oddo, P.; Garner, G. G.; Lee, B. S.; Forest, C. E.; Keller, K.

    2015-12-01

    Sea-levels are rising in many areas around the world, posing risks for coastal communities and infrastructures. Strategies to manage these flood risks are often designed using decision analytical tools that integrate key geophysical, economic, and technological models. Previous studies analyzing sea-level rise adaptation strategies have broken important new ground, but are often silent on the effects of potentially important deep uncertainties and the trade-offs between diverse objectives. Here we implement and improve on a previously published model (van Dantzig, 1956) to represent multiple stakeholder objectives as well as deep uncertainties surrounding model structures and parameters. We analyze the robustness of different strategies in the face of the deep uncertainties and apply global sensitivity analyses to identify key decision-relevant uncertainties.

  20. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides

    DOE PAGES

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G; Wei, Su-Huai; Liu, Feng

    2015-09-18

    Developing practical approaches to effectively reduce the deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this is still a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for such 2D transition-metal dichalcogenides as MoSe2 and WSe2, in which the most abundant defects that can induce deep levels are anion vacancies, the deep levels can be effectively suppressed in Mo1-xWxSe2 alloys at low W concentrations. This surprisingmore » phenomenon is associated with the fact that the global alloy concentration can substantially tune the band edge energies, whereas the preferred locations of Se vacancies around W atoms control the defect level locally. Our findings illustrate a new concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.« less

  1. A model for heat flow in deep borehole disposals of high-level nuclear waste

    NASA Astrophysics Data System (ADS)

    Gibb, Fergus G. F.; Travis, Karl P.; McTaggart, Neil A.; Burley, David

    2008-05-01

    Deep borehole disposal (DBD) is emerging as a viable alternative to mined repositories for many forms of highly radioactive waste. It is geologically safer, more secure, less environmentally disruptive and potentially more cost-effective. All high-level wastes generate heat leading to elevated temperatures in and around the disposal. In some versions of DBD this heat is an essential part of the disposal while in others it affects the performances of materials and waste forms and can threaten the success of the disposal. Different versions of DBD are outlined, for all of which it is essential to predict the distribution of temperature with time. A generic physical model is established and a mathematical model set up involving the transient conductive heat flow differential equation for a cylindrical source term with realistic decay. This equation is solved using the method of Finite Differences. A Fortran computer code (GRANITE) has been developed for the model in the context of DBD and validated against theoretical and other benchmarks. The limitations of the model, code, input parameters and data used are discussed and it is concluded that the model provides a satisfactory basis for predicting temperatures in DBD. Examples of applications to some DBD scenarios are given and it is shown that the results are essential to the design strategy of the DBD versions, geometric details and choice of materials used. Without such modeling it would be impossible to progress DBD of nuclear wastes; something that is now being given serious consideration in several countries.

  2. Capture kinetics at deep-level defects in MBE-grown CdTe layers

    NASA Astrophysics Data System (ADS)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Kret, Slawomir; Kolkovsky, Valery; Karczewski, Grzegorz

    2011-04-01

    The results of deep-level transient spectroscopy (DLTS) investigations in n-type CdTe layers grown by the molecular-beam epitaxy (MBE) technique on lattice-mismatched GaAs substrates are described. Three electron traps and one hole trap, at rather low concentrations of the order of 1013 cm-3, have been revealed in the DLTS spectra measured under various bias conditions of Schottky diodes prepared on the as-grown CdTe layers. One of the electron traps has been attributed to electron states of dislocations on the ground of the logarithmic capture kinetics for capture of electrons into the trap states. The other three traps, displaying exponential capture kinetics, have been attributed to native point defects produced during the epitaxial growth of CdTe. The microscopic nature of the defects responsible for the traps is discussed taking into account recent results of first-principles calculations of the properties of dominant native defects in CdTe.

  3. Effects of impurities on silicon solar-cell performance

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.

    1986-01-01

    Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

  4. Thermal-mechanical modeling of deep borehole disposal of high-level radioactive waste.

    SciTech Connect

    Arnold, Bill Walter; Hadgu, Teklu

    2010-12-01

    Disposal of high-level radioactive waste, including spent nuclear fuel, in deep (3 to 5 km) boreholes is a potential option for safely isolating these wastes from the surface and near-surface environment. Existing drilling technology permits reliable and cost-effective construction of such deep boreholes. Conditions favorable for deep borehole disposal in crystalline basement rocks, including low permeability, high salinity, and geochemically reducing conditions, exist at depth in many locations, particularly in geologically stable continental regions. Isolation of waste depends, in part, on the effectiveness of borehole seals and potential alteration of permeability in the disturbed host rock surrounding the borehole. Coupled thermal-mechanical-hydrologic processes induced by heat from the radioactive waste may impact the disturbed zone near the borehole and borehole wall stability. Numerical simulations of the coupled thermal-mechanical response in the host rock surrounding the borehole were conducted with three software codes or combinations of software codes. Software codes used in the simulations were FEHM, JAS3D, Aria, and Adagio. Simulations were conducted for disposal of spent nuclear fuel assemblies and for the higher heat output of vitrified waste from the reprocessing of fuel. Simulations were also conducted for both isotropic and anisotropic ambient horizontal stress in the host rock. Physical, thermal, and mechanical properties representative of granite host rock at a depth of 4 km were used in the models. Simulation results indicate peak temperature increases at the borehole wall of about 30 C and 180 C for disposal of fuel assemblies and vitrified waste, respectively. Peak temperatures near the borehole occur within about 10 years and decline rapidly within a few hundred years and with distance. The host rock near the borehole is placed under additional compression. Peak mechanical stress is increased by about 15 MPa (above the assumed ambient

  5. Thermal-Mechanical Modeling of Deep Borehole Disposal of High-Level Radioactive Waste

    NASA Astrophysics Data System (ADS)

    Arnold, B. W.; Clayton, D. J.; Herrick, C. G.; Hadgu, T.

    2010-12-01

    Disposal of high-level radioactive waste, including spent nuclear fuel, in deep (3 to 5 km) boreholes is a potential option for safely isolating these wastes from the surface and near-surface environment. Existing drilling technology permits reliable and cost-effective construction of such deep boreholes. Conditions favorable for deep borehole disposal in crystalline basement rocks, including low permeability, high salinity, and geochemically reducing conditions, exist at depth in many locations, particularly in geologically stable continental regions. Isolation of waste depends, in part, on the effectiveness of borehole seals and potential alteration of permeability in the disturbed host rock surrounding the borehole. Coupled thermal-mechanical-hydrologic processes induced by heat from the radioactive waste may impact the disturbed zone near the borehole and borehole wall stability. Numerical simulations of the coupled thermal-mechanical response in the host rock surrounding the borehole were conducted with three software codes or combinations of software codes. Software codes used in the simulations were FEHM, JAS3D, Aria, and Adagio. Simulations were conducted for disposal of spent nuclear fuel assemblies and for the higher heat output of vitrified waste from the reprocessing of fuel. Simulations were also conducted for both isotropic and anisotropic ambient horizontal stress in the host rock. Physical, thermal, and mechanical properties representative of granite host rock at a depth of 4 km were used in the models. Simulation results indicate peak temperature increases at the borehole wall of about 30 °C and 180 °C for disposal of fuel assemblies and vitrified waste, respectively. Peak temperatures near the borehole occur within about 10 years and decline rapidly within a few hundred years and with distance. The host rock near the borehole is placed under additional compression. Peak mechanical stress is increased by about 15 MPa (above the assumed ambient

  6. Transforming Passive Receptivity of Knowledge into Deep Learning Experiences at the Undergraduate Level: An Example from Music Theory

    ERIC Educational Resources Information Center

    Ferenc, Anna

    2015-01-01

    This article discusses transformation of passive knowledge receptivity into experiences of deep learning in a lecture-based music theory course at the second-year undergraduate level through implementation of collaborative projects that evoke natural critical learning environments. It presents an example of such a project, addresses key features…

  7. Comparison of bladder segmentation using deep-learning convolutional neural network with and without level sets

    NASA Astrophysics Data System (ADS)

    Cha, Kenny H.; Hadjiiski, Lubomir M.; Samala, Ravi K.; Chan, Heang-Ping; Cohan, Richard H.; Caoili, Elaine M.

    2016-03-01

    We are developing a CAD system for detection of bladder cancer in CTU. In this study we investigated the application of deep-learning convolutional neural network (DL-CNN) to the segmentation of the bladder, which is a challenging problem because of the strong boundary between the non-contrast and contrast-filled regions in the bladder. We trained a DL-CNN to estimate the likelihood of a pixel being inside the bladder using neighborhood information. The segmented bladder was obtained from thresholding and hole-filling of the likelihood map. We compared the segmentation performance of the DL-CNN alone and with additional cascaded 3D and 2D level sets to refine the segmentation using 3D hand-segmented contours as reference standard. The segmentation accuracy was evaluated by five performance measures: average volume intersection %, average % volume error, average absolute % error, average minimum distance, and average Jaccard index for a data set of 81 training and 92 test cases. For the training set, DLCNN with level sets achieved performance measures of 87.2+/-6.1%, 6.0+/-9.1%, 8.7+/-6.1%, 3.0+/-1.2 mm, and 81.9+/-7.6%, respectively, while the DL-CNN alone obtained the values of 73.6+/-8.5%, 23.0+/-8.5%, 23.0+/-8.5%, 5.1+/-1.5 mm, and 71.5+/-9.2%, respectively. For the test set, the DL-CNN with level sets achieved performance measures of 81.9+/-12.1%, 10.2+/-16.2%, 14.0+/-13.0%, 3.6+/-2.0 mm, and 76.2+/-11.8%, respectively, while DL-CNN alone obtained 68.7+/-12.0%, 27.2+/-13.7%, 27.4+/-13.6%, 5.7+/-2.2 mm, and 66.2+/-11.8%, respectively. DL-CNN alone is effective in segmenting bladders but may not follow the details of the bladder wall. The combination of DL-CNN with level sets provides highly accurate bladder segmentation.

  8. Surface impurity removal from DIII-D graphite tiles by boron carbide grit blasting

    SciTech Connect

    Lee, R.L.; Hollerbach, M.A.; Holtrop, K.L.; Kellman, A.G.; Taylor, P.L.; West, W.P.

    1993-11-01

    During the latter half of 1992, the DIII-D tokamak at General Atomics (GA) underwent several modifications of its interior. One of the major tasks involved the removal of accumulated metallic impurities from the surface of the graphite tiles used to line the plasma facing surfaces inside of the tokamak. Approximately 1500 graphite tiles and 100 boron nitride tiles from the tokamak were cleaned to remove the metallic impurities. The cleaning process consisted of several steps: the removed graphite tiles were permanently marked, surface blasted using boron carbide (B{sub 4}C) grit media (approximately 37 {mu}m. diam.), ultrasonically cleaned in ethanol to remove loose dust, and outgassed at 1000{degrees}C. Tests were done using, graphite samples and different grit blaster settings to determine the optimum propellant and abrasive media pressures to remove a graphite layer approximately 40-50 {mu}m deep and yet produce a reasonably smooth finish. EDX measurements revealed that the blasting technique reduced the surface Ni, Cr, and Fe impurity levels to those of virgin graphite. In addition to the surface impurity removal, tritium monitoring was performed throughout the cleaning process. A bubbler system was set up to monitor the tritium level in the exhaust gas from the grit blaster unit. Surface wipes were also performed on over 10% of the tiles. Typical surface tritium concentrations of the tiles were reduced from about 500 dpm/100 cm{sup 2} to less than 80 dpm/100 cm{sup 2} following the cleaning. This tile conditioning, and the installation of additional graphite tiles to cover a high fraction of the metallic plasma facing surfaces, has substantially reduced metallic impurities in the plasma discharges which has allowed rapid recovery from a seven-month machine opening and regimes of enhanced plasma energy confinement to be more readily obtained. Safety issues concerning blaster operator exposure to carcinogenic metals and radioactive tritium will also be addressed.

  9. Novel method to determine capture cross-section activation energies by deep-level transient spectroscopy techniques

    NASA Astrophysics Data System (ADS)

    Criado, J.; Gomez, A.; Calleja, E.; Muñoz, E.

    1988-02-01

    Deep-center characterization by deep-level transient spectroscopy (DLTS) allows a direct determination of the trap thermal emission activation energy. However, capture barrier energy measurements, based on trap partial filling by pulses of increasing width, require a quite different experimental processing and pose some hardware difficulties. In this letter we present a new method to determine the trap capture barrier energy, one that requires constant-width filling pulses and obtains capture information from standard DLTS data. This technique has been applied to Te-, Sn-, and Si-related DX centers in AlGaAs alloys.

  10. Paleoclimate Impact on a Proposed Canadian Deep Geologic Repository for Low and Intermediate Level Radioactive Waste

    NASA Astrophysics Data System (ADS)

    Normani, S. D.; Sykes, J. F.; Yin, Y.

    2009-05-01

    A Deep Geologic Repository (DGR) for low and intermediate level radioactive waste has been proposed by Ontario Power Generation (OPG) for the Bruce site near Tiverton, Ontario Canada. As envisioned, the DGR is to be constructed at a depth of about 680 m below ground surface within the argillaceous Ordovician limestone of the Cobourg Formation. Within the geologic setting of southern Ontario, the Bruce site is located west of the Algonquin Arch within the Bruce Megablock, positioned along the eastern edge of the Michigan Basin. It is clear that to credibly address the long-term safety of a deep geologic repository, long-term climate change and in particular a glaciation scenario, must be incorporated into performance assessment modelling activities. In addition, by simulating flow system responses to the last Laurentide (North American) glacial episode, insight is gained into the role of significant past stresses (mechanical, thermal and hydrological) on determining the nature of present flow system conditions, and by extension, the likely impact of similar, future boundary condition changes on long-term flow system stability. The last Laurentide glacial episode was characterized by the following: occurred over a 120 000 year time period; included numerous cycles of glacial advance and retreat, with maximum ice thickness over a typical Ontario site reaching nearly 3 km; included extensive periods of transient, peri-glacial conditions during which permafrost could impact the subsurface, depending on location, to several hundreds of metres; and was accompanied by significant basal meltwater production near the end of the glacial episode. The impact of glaciation and deglaciation on density-dependent groundwater flow was investigated using results from the deterministic University of Toronto Glacial Systems Model (GSM) of continental ice-sheet evolution. The 18,500 km2 regional-scale domain extends from Lake Huron to Georgian Bay and includes 31 sedimentary strata that

  11. Systems analysis approach to the disposal of high-level waste in deep ocean sediments

    SciTech Connect

    de Marsily, G.; Hill, M. D.; Murray, C. N.; Talbert, D. M.; Van Dorp, F.; Webb, G. A.M.

    1980-01-01

    Among the different options being studied for disposal of high-level solidified waste, increasing attention is being paid to that of emplacement of glasses incorporating the radioactivity in deep oceanic sediments. This option has the advantage that the areas of the oceans under investigation appear to be relatively unproductive biologically, are relatively free from cataclysmic events, and are areas in which the natural processes are slow. Thus the environment is stable and predictable so that a number of barriers to the release and dispersion of radioactivity can be defined. Task Groups set up in the framework of the International Seabed Working Group have been studying many aspects of this option since 1976. In order that the various parts of the problem can be assessed within an integrated framework, the methods of systems analysis have been applied. In this paper the Systems Analysis Task Group members report the development of an overall system model. This will be used in an iterative process in which a preliminary analysis, together with a sensitivity analysis, identifies the parameters and data of most importance. The work of the other task groups will then be focussed on these parameters and data requirements so that improved results can be fed back into an improved overall systems model. The major requirements for the development of a preliminary overall systems model are that the problem should be separated into identified elements and that the interfaces between the elements should be clearly defined. The model evolved is deterministic and defines the problem elements needed to estimate doses to man.

  12. Trade Study of System Level Ranked Radiation Protection Concepts for Deep Space Exploration

    NASA Technical Reports Server (NTRS)

    Cerro, Jeffrey A

    2013-01-01

    A strategic focus area for NASA is to pursue the development of technologies which support exploration in space beyond the current inhabited region of low earth orbit. An unresolved issue for crewed deep space exploration involves limiting crew radiation exposure to below acceptable levels, considering both solar particle events and galactic cosmic ray contributions to dosage. Galactic cosmic ray mitigation is not addressed in this paper, but by addressing credible, easily implemented, and mass efficient solutions for the possibility of solar particle events, additional margin is provided that can be used for cosmic ray dose accumulation. As a result, NASA s Advanced Engineering Systems project office initiated this Radiation Storm Shelter design activity. This paper reports on the first year results of an expected 3 year Storm Shelter study effort which will mature concepts and operational scenarios that protect exploration astronauts from solar particle radiation events. Large trade space definition, candidate concept ranking, and a planned demonstration comprised the majority of FY12 activities. A system key performance parameter is minimization of the required increase in mass needed to provide a safe environment. Total system mass along with operational assessments and other defined protection system metrics provide the guiding metrics to proceed with concept developments. After a downselect to four primary methods, the concepts were analyzed for dosage severity and the amount of shielding mass necessary to bring dosage to acceptable values. Besides analytical assessments, subscale models of several concepts and one full scale concept demonstrator were created. FY12 work terminated with a plan to demonstrate test articles of two selected approaches. The process of arriving at these selections and their current envisioned implementation are presented in this paper.

  13. Analysis of generation and annihilation of deep level defects in a silicon-irradiated bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Madhu, K. V.; Kulkarni, S. R.; Ravindra, M.; Damle, R.

    2007-08-01

    A commercial bipolar junction transistor (2 N 2219 A, npn), irradiated with 120 MeV Si9+ ions with a fluence of the order of 1012 ions cm-2, is studied for radiation-induced gain degradation and deep level defects. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap energy levels with energies ranging from EC - 0.160 eV to EC - 0.581 eV are observed in the base-collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from EV + 0.182 eV to EV + 0.401 eV. The identification of the defect type is made on the basis of its finger prints such as activation energy, annealing temperature and capture cross section by comparing with those reported in the literature. New energy levels for the defects A-center, di-vacancy and Si-interstitial are also observed. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation.

  14. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... require an expanded discussion of information on impurities: (1) From other possible chemical reactions... why they may be present. The discussion should be based on established chemical theory and on what the... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur...

  15. Study of radiation induced deep-level defects in proton irradiated AlGaAs-GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Li, S. S.

    1980-01-01

    Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements.

  16. Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Asghar, M.; K., Mahmood; A. Hasan, M.; T. Ferguson, I.; Tsu, R.; Willander, M.

    2014-09-01

    We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current—voltage (I—V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ±0.03 eV and capture cross-section of 8.57 × 10-18 cm2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

  17. Determination of trace level genotoxic impurities in small molecule drug substances using conventional headspace gas chromatography with contemporary ionic liquid diluents and electron capture detection.

    PubMed

    Ho, Tien D; Yehl, Peter M; Chetwyn, Nik P; Wang, Jin; Anderson, Jared L; Zhong, Qiqing

    2014-09-26

    Ionic liquids (ILs) were used as a new class of diluents for the analysis of two classes of genotoxic impurities (GTIs), namely, alkyl/aryl halides and nitro-aromatics, in small molecule drug substances by headspace gas chromatography (HS-GC) coupled with electron capture detection (ECD). This novel approach using ILs as contemporary diluents greatly broadens the applicability of HS-GC for the determination of high boiling (≥ 130°C) analytes including GTIs with limits of detection (LOD) ranging from 5 to 500 parts-per-billion (ppb) of analytes in a drug substance. This represents up to tens of thousands-fold improvement compared to traditional HS-GC diluents such as dimethyl sulfoxide (DMSO) and dimethylacetamide (DMAC). Various ILs were screened to determine their suitability as diluents for the HS-GC/ECD analysis. Increasing the HS oven temperatures resulted in varying responses for alkyl/aryl halides and a significant increase in response for all nitroaromatic GTIs. Linear ranges of up to five orders of magnitude were found for a number of analytes. The technique was validated on two active pharmaceutical ingredients with excellent recovery. This simple and robust methodology offers a key advantage in the ease of method transfer from development laboratories to quality control environments since conventional validated chromatographic data systems and GC instruments can be used. For many analytes, it is a cost effective alternative to more complex trace analytical methodologies like LC/MS and GC/MS, and significantly reduces the training needed for operation.

  18. Trace Level Quantification of the (−)2-(2-amino-5-chlorophenyl)-4-cyclopropyl-1,1,1-trifluoro-3-butyn-2-ol Genotoxic Impurity in Efavirenz Drug Substance and Drug Product Using LC–MS/MS

    PubMed Central

    Jaishetty, Nagadeep; Palanisamy, Kamaraj; Maruthapillai, Arthanareeswari; Jaishetty, Rajamanohar

    2015-01-01

    Efavirenz is a non-nucleoside reverse transcriptase inhibitor used in the treatment of human immunodeficiency virus type-1 (HIV). (2S)-(2-Amino-5-chlorophenyl)-4-cyclopropyl-1,1,1-trifluoro-3-butyn-2-ol (AMCOL), used as an intermediate in the synthesis of efavirenz and a degradation impurity, has an aminoaryl derivative which is a well-known alerting function for genotoxic activity. Upon request from a regulatory agency, a selective and sensitive liquid chromatography–tandem mass spectrometry (LC–MS/MS) method was developed for trace level quantitative determination of AMCOL related compound of efavirenz, for a risk assessment and comparison of impurity levels with the commercially available innovator product (brand name: Sustiva). The method provided excellent sensitivity at a typical target analyte level of <2.5 ppm, an established threshold of toxicological concern (TTC), when the drug substance and drug product samples were prepared at 15.0 mg/mL. The AMCOL sample was analyzed on a Luna C18 (2) (100 mm × 4.6 mm, 3 µm) column interfaced with a triple quadrupole tandem mass spectrometer operated in a multiple reaction monitoring (MRM) mode. Positive electrospray ionization (ESI) was employed as the ionization source and the mobile phase used was 5.0 mM ammonium acetate-methanol (35:65, v/v). The calibration curve showed good linearity over the concentration range of 0.2–5.0 ppm with a correlation coefficient of >0.999. The limit of detection (LOD) and limit of quantification (LOQ) were found to be 0.07 and 0.2 ppm, respectively. The developed method was validated as per international council on harmonization (ICH) guidelines in terms of LOD, LOQ, linearity, precision, accuracy, specificity, and robustness.

  19. Coseismic and aseismic response of the rock mass surrounding deep level mining operations

    NASA Astrophysics Data System (ADS)

    Milev, Alexander; Durrheim, Raymond; Naoi, Makoto; Yabe, Yasuo; Ogasawara, Hiroshi; Nakatani, Masao

    2016-04-01

    This study is an attempt to characterize the rock mass behaviour around deep level mining excavations using high-resolution quasi-static and dynamic data. That includes: strong ground motion recorded in tunnels and stopes, tilt and strain recorded underground as well as acoustic emission events recorded close to an active fault. The ground motion was compared to the coseismic and aseismic deformations. During the blasting time and the subsequent seismic events the strain and tilt show a rapid increase. Similar increase was observed during a strong seismic event. These were described as 'fast' seismic events or coseismic deformations. However, much of deformations occurred independently of the seismic events and was described as 'slow' or aseismic events. The ground motion, generated by mining induced seismic events, recorded at the hangingwall of an active stopes has a maximum value of 3 m/s and was found to be 9 ± 3 times larger than the ground motion recorded in a solid rocks. A number of simulated rockbursts were conducted underground and well recorded by dense array of shock type accelerometers placed along the blasting wall. The ground motion was found to attenuate exponentially with the distance (R) following R-1.1 & R-1.7 for compact rocks and R-3.1 & R-3.4 for fractured rocks. During the monitoring period a seismic event of MW=2.1 occurred in the vicinity of the instrumented site. Using the distribution of the AE events the position of the fault in the source area was successfully delineated. The tilt changes associated with this event showed a well pronounced after-tilt. The distribution of the AE events following the main shock was related to after tilt in order to quantify post slip behaviour of the source. There was no evidence found for coseismic expansion of the source after the main slip. Therefore, the hypothesis of the post-seismic creep type behaviour of the source was proposed to explain the after-tilt following the main shock.

  20. High water level impedes the adaptation of Polygonum hydropiper to deep burial: responses of biomass allocation and root morphology.

    PubMed

    Pan, Ying; Xie, Yong H; Deng, Zheng M; Tang, Yue; Pan, Dong D

    2014-07-08

    Many studies have investigated the individual effects of sedimentation or inundation on the performance of wetland plants, but few have examined the combined influence of these processes. Wetland plants might show greater morphological plasticity in response to inundation than to sedimentation when these processes occur simultaneously since inundation can negate the negative effects of burial on plant growth. Here, we evaluate this hypothesis by assessing growth of the emergent macrophyte Polygonum hydropiper under flooding (0 and 40 cm) and sedimentation (0, 5, and 10 cm), separately and in combination. Deep burial and high water level each led to low oxidation-reduction potential, biomass (except for 5-cm burial), and growth of thick, short roots. These characteristics were generally more significant under high water level than under deep burial conditions. More biomass was allocated to stems in the deep burial treatments, but more to leaves in the high water level treatments. Additionally, biomass accumulation was lower and leaf mass ratio was higher in the 40-cm water level + 10-cm burial depth treatment than both separate effects. Our data indicate that inundation plays a more important role than sedimentation in determining plant morphology, suggesting hierarchical effects of environmental stressors on plant growth.

  1. High water level impedes the adaptation of Polygonum hydropiper to deep burial: Responses of biomass allocation and root morphology

    PubMed Central

    Pan, Ying; Xie, Yong H.; Deng, Zheng M.; Tang, Yue; Pan, Dong D.

    2014-01-01

    Many studies have investigated the individual effects of sedimentation or inundation on the performance of wetland plants, but few have examined the combined influence of these processes. Wetland plants might show greater morphological plasticity in response to inundation than to sedimentation when these processes occur simultaneously since inundation can negate the negative effects of burial on plant growth. Here, we evaluate this hypothesis by assessing growth of the emergent macrophyte Polygonum hydropiper under flooding (0 and 40 cm) and sedimentation (0, 5, and 10 cm), separately and in combination. Deep burial and high water level each led to low oxidation-reduction potential, biomass (except for 5-cm burial), and growth of thick, short roots. These characteristics were generally more significant under high water level than under deep burial conditions. More biomass was allocated to stems in the deep burial treatments, but more to leaves in the high water level treatments. Additionally, biomass accumulation was lower and leaf mass ratio was higher in the 40-cm water level + 10-cm burial depth treatment than both separate effects. Our data indicate that inundation plays a more important role than sedimentation in determining plant morphology, suggesting hierarchical effects of environmental stressors on plant growth. PMID:25002329

  2. Impurity effects of transverse Ising model with multi-impurity

    NASA Astrophysics Data System (ADS)

    Huang, Xuchu; Yang, Zhihua

    2015-02-01

    We study the transverse Ising spin model with multi-impurity under the exact solution. The influence mechanisms of the concentration, configuration, impurity-inducing-interaction are investigated through the deformation energy, long-range order and the specific heat. It reveals a way that the impurities have crucial effects on the magnetic order of the system, which can be used to scale the order-disorder transition. In particular, the change of the exchange coupling interaction or magnetic field can lead to the deviation of the phase point. Moreover, the impurity excitation cannot be neglected in thermodynamic properties even though the concentration is only a few percent.

  3. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  4. EL2 and related defects in GaAs - Challenges and pitfalls. [microdefect introducing a deep donor level

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The incorporation process of nonequilibrium vacancies in melt-grown GaAs is strongly complicated by deviations from stoichiometry and the presence of two sublattices. Many of the microdefects originating in these vacancies and their interactions introduce energy levels (shallow and deep) within the energy gap. The direct identification of the chemical or structural signature of these defects and its direct correlation to their electronic behavior is not generally possible. It is necessary, therefore, to rely on indirect methods and phenomenological models and deal with the associated pitfalls. EL2, a microdefect introducing a deep donor level, has been in the limelight in recent years because it is believed to be responsible for the semi-insulating behavior of undoped GaAs. Although much progress has been made towards understanding its origin and nature, some relevant questions remain unanswered. An attempt is made to assess the present status of understanding of EL2 in the light of most recent results.

  5. Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism

    SciTech Connect

    Wakita, Masaki; Suzuki, Kei; Shinozuka, Yuzo

    2014-02-21

    We simulated the time evolution of electron-lattice coupling mode, and a series of nonradiative carrier captures by a deep-level defect in a semiconductor. For lattice relaxation energy of the order of the band gap, a series of coherent (athermal) electron and hole captures by a defect is possible for high carrier densities, which results in an inflation in the induced lattice vibration, which in turn enhances a defect reaction.

  6. Study of deep level characteristics in the neutrons irradiated Si structures by combining pulsed and steady-state spectroscopy techniques

    NASA Astrophysics Data System (ADS)

    Gaubas, E.; Kalendra, V.; Ceponis, T.; Uleckas, A.; Tekorius, A.; Vaitkus, J.; Velicka, A.

    2012-11-01

    The standard methods, such as capacitance deep level transient spectroscopy (C-DLTS) and thermally stimulated current (TSC) techniques are unsuitable for the analysis of heavily irradiated devices. In this work, therefore, several steady-state and pulsed techniques have been combined to comprehensively evaluate parameters of radiation defects and functional characteristics of the irradiated Si pin detectors. In order to understand defects created by radiation and evaluate their evolution with fluence, C-DLTS and TSC techniques have been employed to make a baseline identification of the radiation induced traps after irradiation with a rather small neutron fluence of 1012 cm-2. The steady-state photo-ionization spectroscopy (PIS) technique has been involved to correlate thermal- and photo- activation energies for definite radiation defects. A contactless technique for simultaneous measurements of the carrier lifetime and the parameters of deep levels based on microwave probed pulsed photo-conductivity (MW-PC) spectroscopy has been applied to correlate carrier capture cross-sections and densities of the identified different radiation defects. A technique for spectroscopy of deep levels in junction structures (BELIV) based on measurements of barrier capacitance charging current transient changes due to additional spectrally resolved pulsed illumination has been applied to evaluate the functional characteristics of the irradiated diodes. Pulsed spectroscopic measurements were implemented by combining the analysis of generation current and of barrier capacitance charging transients modified by a single fs pulse of illumination generated by an optical parametric oscillator of varied wavelength in the range from 0.5 to 10 μm. Several deep levels with activation energy in the range of 0.18-0.8 eV have been resolved from spectral analysis in the samples of Si grown by magnetic field applied Czochralski (MCz) technology.

  7. Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality

    SciTech Connect

    Hou, Dongchao; Voss, Tobias; Ronning, Carsten; Menzel, Andreas; Zacharias, Margit

    2014-06-21

    The excitation-intensity dependence of the excitonic near-band-edge emission (NBE) and deep-level related emission (DLE) bands in ZnO nanowires and bulk crystals is studied, which show distinctly different power laws. The behavior can be well explained with a rate-equation model taking into account deep donor and acceptor levels with certain capture cross sections for electrons from the conduction band and different radiative lifetimes. In addition, a further crucial ingredient of this model is the background n-type doping concentration inherent in almost all ZnO single crystals. The interplay of the deep defects and the background free-electron concentration in the conduction band at room temperature reproduces the experimental results well over a wide range of excitation intensities (almost five orders of magnitude). The results demonstrate that for many ZnO bulk samples and nanostructures, the relative intensity R = I{sub NBE}/I{sub DLE} can be adjusted over a wide range by varying the excitation intensity, thus, showing that R should not be taken as an indicator for the crystalline quality of ZnO samples unless absolute photoluminescence intensities under calibrated excitation conditions are compared. On the other hand, the results establish an all-optical technique to determine the relative doping levels in different ZnO samples by measuring the excitation-intensity dependence of the UV and visible luminescence bands.

  8. Impurity sources in TEXTOR

    NASA Astrophysics Data System (ADS)

    Pospieszczyk, A.; Bay, H. L.; Bogen, P.; Hartwig, H.; Hintz, E.; Konen, L.; Ross, G. G.; Rusbuldt, D.; Samm, U.; Schweer, B.

    1987-02-01

    The deuterium, oxygen and carbon fluxes from the main limiter and the deuterium fluxes from the wall are measured in TEXTOR for an "all carbon" surrounding as a function of central density ne, of applied ICRH-power and of different wall conditions (carbonization). For this purpose, emission spectroscopy both with filter systems and spectrometers has been used. It is found that a major release mechanism for light impurities is via the formation of molecules. Oxygen seems to enter the discharge from the liner via O-D containing molecules, whereas the limiter acts as the main carbon source by the release of hydro-carbons as indicated by the observed CD-band spectra. Both oxygen and carbon fluxes are reduced by about a factor of two after a fresh carbonization. Above a certain critical density the plasma detaches from the limiter and forms a stable discharge with a radiation cooled boundary layer and with a major fraction of particles now reaching the wall instead of the limiter. The critical density rises with decreasing impurity fluxes or with increasing heating powers.

  9. The effect of secondary impurities on solar cell performance

    NASA Technical Reports Server (NTRS)

    Hill, D. E.; Gutsche, H. W.; Wang, M. S.; Gupta, K. P.; Tucker, W. F.; Dowdy, J. D.; Crepin, R. J.

    1976-01-01

    Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.

  10. Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits

    SciTech Connect

    Baik, Chan-Wook Young Ahn, Ho; Kim, Yongsung; Lee, Jooho; Hong, Seogwoo; Hee Choi, Jun; Kim, Sunil; Hun Lee, Sang; Min Kim, Jong; Hwang, Sungwoo; Yeon Jun, So; Yu, SeGi; Lawrence Ives, R.

    2014-01-13

    A multi-level microstructure is proposed for terahertz slow-wave circuits, with dispersion relation retrieved by scattering parameter measurements. The measured return loss shows strong resonances above the cutoff with negligible phase shifts compared with finite element analysis. Splitting the circuit into multi levels enables a low aspect ratio configuration that alleviates the loading effect of deep-reactive-ion etching on silicon wafers. This makes it easier to achieve flat-etched bottom and smooth sidewall profiles. The dispersion retrieved from the measurement, therefore, corresponds well to the theoretical estimation. The result provides a straightforward way to the precise determination of dispersions in terahertz vacuum electronics.

  11. First-principles study of carbon impurities in CuInSe{sub 2} and CuGaSe{sub 2}, present in non-vacuum synthesis methods

    SciTech Connect

    Bekaert, J. Saniz, R.; Partoens, B.; Lamoen, D.

    2015-01-07

    A first-principles study of the structural and electronic properties of carbon impurities in CuInSe{sub 2} and CuGaSe{sub 2} is presented. Carbon is present in organic molecules in the precursor solutions used in non-vacuum growth methods for CuInSe{sub 2} and CuGaSe{sub 2} based photovoltaic cells. These growth methods make more efficient use of material, time, and energy than traditional vacuum methods. The formation energies of several carbon impurities are calculated using the hybrid HSE06 functional. C{sub Cu} acts as a shallow donor, C{sub In} and interstitial C yield deep donor levels in CuInSe{sub 2}, while in CuGaSe{sub 2} C{sub Ga} and interstitial C act as deep amphoteric defects. So, these defects reduce the majority carrier (hole) concentration in p-type CuInSe{sub 2} and CuGaSe{sub 2} by compensating the acceptor levels. The deep defects are likely to act as recombination centers for the photogenerated charge carriers and are thus detrimental for the performance of the photovoltaic cells. On the other hand, the formation energies of the carbon impurities are high, even under C-rich growth conditions. Thus, few C impurities will form in CuInSe{sub 2} and CuGaSe{sub 2} in thermodynamic equilibrium. However, the deposition of the precursor solution in non-vacuum growth methods presents conditions far from thermodynamic equilibrium. In this case, our calculations show that C impurities formed in non-equilibrium tend to segregate from CuInSe{sub 2} and CuGaSe{sub 2} by approaching thermodynamic equilibrium, e.g., via thorough annealing.

  12. Relationship of deep defects to oxygen and hydrogen content in nanocrystalline silicon photovoltaic materials

    SciTech Connect

    Hugger, Peter G.; Cohen, J. David; Yan Baojie; Yue Guozhen; Yang, Jeffrey; Guha, Subhendu

    2010-12-20

    We report measurements of the structural and compositional properties of a range of hydrogenated nanocrystalline films. We employed Raman spectroscopy for crystallinity and time-of-flight secondary ion mass spectroscopy (TOF-SIMS) for impurity characterizations. The crystalline volume fractions and impurity levels are correlated with the deep state densities determined by drive level capacitance profiling. Those defects were found to have a thermal emission energy of 0.65{+-}.05 eV. We found that the overall crystallinity correlated reasonably well with the density of such defect states and also found a strong correlation between the defect density and the levels of oxygen impurities. Possible origins of these defects are discussed.

  13. Effects of the impurity-host interactions on the nonradiative processes in ZnS:Cr

    NASA Astrophysics Data System (ADS)

    Tablero, C.

    2010-11-01

    There is a great deal of controversy about whether the behavior of an intermediate band in the gap of semiconductors is similar or not to the deep-gap levels. It can have significant consequences, for example, on the nonradiative recombination. In order to analyze the behavior of an intermediate band, we have considered the effect of the inward and outward displacements corresponding to breathing and longitudinal modes of Cr-doped ZnS and on the charge density for different processes involved in the nonradiative recombination using first-principles. This metal-doped zinc chalcogenide has a partially filled band within the host semiconductor gap. In contrast to the properties exhibited by deep-gap levels in other systems, we find small variations in the equilibrium configurations, forces, and electronic density around the Cr when the nonradiative recombination mechanisms modify the intermediate band charge. The charge density around the impurity is equilibrated in response to the perturbations in the equilibrium nuclear configuration and the charge of the intermediate band. The equilibration follows a Le Chatelier principle through the modification of the contribution from the impurity to the intermediate band and to the valence band. The intermediate band introduced by Cr in ZnS for the concentrations analyzed makes the electronic capture difficult and later multiphonon emission in the charge-transfer processes, in accordance with experimental results.

  14. Exploring the Deep-Level Reasoning Questions Effect during Vicarious Learning among Eighth to Eleventh Graders in the Domains of Computer Literacy and Newtonian Physics

    ERIC Educational Resources Information Center

    Gholson, Barry; Witherspoon, Amy; Morgan, Brent; Brittingham, Joshua K.; Coles, Robert; Graesser, Arthur C.; Sullins, Jeremiah; Craig, Scotty D.

    2009-01-01

    This paper tested the deep-level reasoning questions effect in the domains of computer literacy between eighth and tenth graders and Newtonian physics for ninth and eleventh graders. This effect claims that learning is facilitated when the materials are organized around questions that invite deep-reasoning. The literature indicates that vicarious…

  15. Defect levels in Cu2ZnSn(SxSe1-x)4 solar cells probed by current-mode deep level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Das, Sandip; Chaudhuri, Sandeep K.; Bhattacharya, Raghu N.; Mandal, Krishna C.

    2014-05-01

    Defect levels in kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have been investigated by current-mode deep level transient spectroscopy. Experiments were carried out on two CZTSSe cells with photoconversion efficiencies of 4.1% and 7.1% measured under AM 1.5 illumination. The absorber layer of the 4.1% efficiency cell was prepared by annealing evaporated ZnS/Cu/Sn stacked precursor under S/Se vapor, while the absorber of the 7.1% efficiency cell was prepared by co-evaporation of the constituent elements. The 4.1% efficiency CZTSSe cell with a S/(S + Se) ratio of 0.58 exhibited two dominant deep acceptor levels at Ev + 0.12 eV, and Ev + 0.32 eV identified as CuZn(-/0) and CuSn(2-/-) antisite defects, respectively. The 7.1% efficiency cell with purely Se composition S/(S + Se) = 0 showed only one shallow level at Ev + 0.03 eV corresponding to Cu-vacancy (VCu). Our results revealed that VCu is the primary defect center in the high-efficiency kesterite solar cell in contrast to the detrimental CuZn and CuSn antisites found in the low efficiency CZTSSe cells limiting the device performance.

  16. Stabilization of the Particle-Hole Pfaffian Order by Landau-Level Mixing and Impurities That Break Particle-Hole Symmetry.

    PubMed

    Zucker, P T; Feldman, D E

    2016-08-26

    Numerical results suggest that the quantum Hall effect at ν=5/2 is described by the Pfaffian or anti-Pfaffian state in the absence of disorder and Landau-level mixing. Those states are incompatible with the observed transport properties of GaAs heterostructures, where disorder and Landau-level mixing are strong. We show that the recent proposal of a particle-hole (PH)-Pfaffian topological order by Son is consistent with all experiments. The absence of particle-hole symmetry at ν=5/2 is not an obstacle to the existence of the PH-Pfaffian order since the order is robust to symmetry breaking.

  17. Stabilization of the Particle-Hole Pfaffian Order by Landau-Level Mixing and Impurities That Break Particle-Hole Symmetry

    NASA Astrophysics Data System (ADS)

    Zucker, P. T.; Feldman, D. E.

    2016-08-01

    Numerical results suggest that the quantum Hall effect at ν =5 /2 is described by the Pfaffian or anti-Pfaffian state in the absence of disorder and Landau-level mixing. Those states are incompatible with the observed transport properties of GaAs heterostructures, where disorder and Landau-level mixing are strong. We show that the recent proposal of a particle-hole (PH)-Pfaffian topological order by Son is consistent with all experiments. The absence of particle-hole symmetry at ν =5 /2 is not an obstacle to the existence of the PH-Pfaffian order since the order is robust to symmetry breaking.

  18. Effect of impurity doping in gapped bilayer graphene

    SciTech Connect

    Han, Qi; Yan, Baoming; Jia, Zhenzhao; Niu, Jingjing; Yu, Dapeng; Wu, Xiaosong

    2015-10-19

    Impurity doping plays a pivotal role in semiconductor electronics. We study the doping effect in a two-dimensional semiconductor, gapped bilayer graphene. By employing in situ deposition of calcium on the bilayer graphene, dopants are controllably introduced. Low temperature transport results show a variable range hopping conduction near the charge neutrality point persisting up to 50 K, providing evidence for the impurity levels inside the gap. Our experiment confirms a predicted peculiar effect in the gapped bilayer graphene, i.e., formation of in-gap states even if the bare impurity level lies in the conduction band. The result provides perspective on the effect of doping and impurity levels in semiconducting bilayer graphene.

  19. Distribution Coefficients of Impurities in Metals

    NASA Astrophysics Data System (ADS)

    Pearce, J. V.

    2014-04-01

    Impurities dissolved in very pure metals at the level of parts per million often cause an elevation or depression of the freezing temperature of the order of millikelvins. This represents a significant contribution to the uncertainty of standard platinum resistance thermometer calibrations. An important parameter for characterizing the behavior of impurities is the distribution coefficient , which is the ratio of the solid solubility to liquid solubility. A knowledge of for a given binary system is essential for contemporary methods of evaluating or correcting for the effect of impurities, and it is therefore of universal interest to have the most complete set of values possible. A survey of equilibrium values of (in the low concentration limit) reported in the literature for the International Temperature Scale of 1990 fixed points of Hg, Ga, In, Sn, Zn, Al, Au, Ag, and Cu is presented. In addition, thermodynamic calculations of using MTDATA are presented for 170 binary systems. In total, the combined values of from all available sources for 430 binary systems are presented. In addition, by considering all available values of for impurities in 25 different metal solvents (1300 binary systems) enough data are available to characterize patterns in the value of for a given impurity as a function of its position in the periodic table. This enables prediction of for a significant number of binary systems for which data and calculations are unavailable. By combining data from many sources, values of for solutes (atomic number from 1 to 94) in ITS-90 fixed points from Hg to Cu are suggested, together with some tentative predicted values where literature data and calculations are unavailable.

  20. Effect of Phosphorus Doping and Deposition Temperature on the Deep-Level Transient Spectra in a-Si:H

    NASA Astrophysics Data System (ADS)

    Nakata, Jun-ichi; Tsuchida, Kazuhito; Imao, Shozo; Inuishi, Yoshio

    1992-10-01

    Both voltage- and photoinjected deep-level transient spectroscopy measurements were performed on phosphorus-doped a-Si:H films to clarify the nature of a hole trap state located at Ev+0.6 eV, which was extinguished by light soaking. The density of trapped holes at the state in as-deposited films was weakly dependent on the phosphorus doping concentration. However, it decreased with increasing deposition temperature of the films. These results suggest that the hole trap state is related to weak silicon bonds which act as a precursor to optical degradation.

  1. Deep level transient spectroscopy assessment of silicon contamination in AlGaAs layers grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Calleja, E.; Sanchez, F.; Muñoz, E.; Gibart, P.; Powell, A.; Roberts, J. S.

    1995-08-01

    A systematic silicon contamination has been detected by deep level transient spectroscopy in undoped and n-type doped (Te, Se, Sn) AlGaAs layers, grown in two different metalorganic vapor phase epitaxy reactors. DX center generation by substitutional donors, with very specific capture and emission thermal barriers (fingerprints), is the key to unambiguously identifying their presence, with detection limits well below the standard secondary ion mass spectroscopy capability. We comment on the potential sources of Si contamination (most common in this epitaxial technique), and on the relevance of such contamination to interpreting correctly experimental data related to the microscopic structure of DX centers.

  2. On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAs

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    A practical procedure for the evaluation of the Fermi energy in semi-insulating (SI)GaAs from electrical measurements is presented. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near-infrared absorption measurements, to SIGaAs. Employing this procedure, it is shown that the EL2 concentration in Czochralski-grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p-type crystals) rather than abruptly as previously proposed.

  3. Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Nakano, Yoshitaka; Irokawa, Yoshihiro; Sumiya, Masatomo

    2015-06-01

    We report on turn-on capacitance recovery measurements as a simple short-time method of evaluating carrier-trapping phenomena in a two-dimensional electron gas (2DEG) in the bulk region of AlGaN/GaN heterostructures, employing their Schottky barrier diodes. Using this technique, we have investigated an in-depth relation between deep-level defects and 2DEG carrier trapping in an AlGaN/GaN heterostructure with a GaN buffer layer containing a high C concentration. Steady-state photo-capacitance spectroscopy measurements revealed three C-related deep-level defects located at ~2.07, ~2.80 and ~3.23 eV below the conduction band in the GaN buffer layer. Additionally, turn-on capacitance recovery measurements showed a large decrease in recovery time under white-light optical illuminations with long-pass filters between 370 and 390 nm. It is concluded that the ~3.23 eV level is mainly responsible for the 2DEG carrier-trapping phenomena in the GaN buffer layer of the AlGaN/GaN heterostructure.

  4. Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Li, S. S.

    1981-01-01

    Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

  5. Stabilization of the Particle-Hole Pfaffian Order by Landau-Level Mixing and Impurities That Break Particle-Hole Symmetry.

    PubMed

    Zucker, P T; Feldman, D E

    2016-08-26

    Numerical results suggest that the quantum Hall effect at ν=5/2 is described by the Pfaffian or anti-Pfaffian state in the absence of disorder and Landau-level mixing. Those states are incompatible with the observed transport properties of GaAs heterostructures, where disorder and Landau-level mixing are strong. We show that the recent proposal of a particle-hole (PH)-Pfaffian topological order by Son is consistent with all experiments. The absence of particle-hole symmetry at ν=5/2 is not an obstacle to the existence of the PH-Pfaffian order since the order is robust to symmetry breaking. PMID:27610872

  6. Mobile impurities in ferromagnetic liquids

    NASA Astrophysics Data System (ADS)

    Kantian, Adrian; Schollwoeck, Ulrich; Giamarchi, Thierry

    2011-03-01

    Recent work has shown that mobile impurities in one dimensional interacting systems may exhibit behaviour that differs strongly from that predicted by standard Tomonaga-Luttinger liquid theory, with the appearance of power-law divergences in the spectral function signifying sublinear diffusion of the impurity. Using time-dependent matrix product states, we investigate a range of cases of mobile impurities in systems beyond the analytically accessible examples to assess the existence of a new universality class of low-energy physics in one-dimensional systems. Correspondence: Adrian.Kantian@unige.ch This work was supported in part by the Swiss SNF under MaNEP and division II.

  7. Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

    SciTech Connect

    Meneghini, M. La Grassa, M.; Vaccari, S.; Meneghesso, G.; Zanoni, E.

    2014-03-17

    This paper presents an extensive investigation of the deep levels related to non-radiative recombination in InGaN/GaN light-emitting diodes (LEDs). The study is based on combined optical and deep-level transient spectroscopy measurements, carried out on LEDs with identical structure and with different values of the non-radiative recombination coefficient. Experimental data lead to the following, relevant, results: (i) LEDs with a high non-radiative recombination coefficient have a higher concentration of a trap (labeled as “e{sub 2}”) with an activation energy of 0.7 eV, which is supposed to be located close to/within the active region; (ii) measurements carried out with varying filling pulse duration suggest that this deep level behaves as a point-defect/dislocation complex. The Arrhenius plot of this deep level is critically compared with the previous literature reports, to identify its physical origin.

  8. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  9. Late Pleistocene Sea level on the New Jersey Margin: Implications to eustasy and deep-sea temperature

    USGS Publications Warehouse

    Wright, J.D.; Sheridan, R.E.; Miller, K.G.; Uptegrove, J.; Cramer, B.S.; Browning, J.V.

    2009-01-01

    We assembled and dated a late Pleistocene sea-level record based on sequence stratigraphy from the New Jersey margin and compared it with published records from fossil uplifted coral reefs in New Guinea, Barbados, and Araki Island, as well as a composite sea-level estimate from scaling of Red Sea isotopic values. Radiocarbon dates, amino acid racemization data, and superposition constrain the ages of large (20-80??m) sea-level falls from New Jersey that correlate with Marine Isotope Chrons (MIC) 2, 3b, 4, 5b, and 6 (the past 130??kyr). The sea-level records for MIC 1, 2, 4, 5e, and 6 are similar to those reported from New Guinea, Barbados, Araki, and the Red Sea; some differences exist among records for MIC 3. Our record consistently provides the shallowest sea level estimates for MIC3 (??? 25-60??m below present); it agrees most closely with the New Guinea record of Chappell (2002; ??? 35-70??m), but contrasts with deeper estimates provided by Araki (??? 85-95??m) and the Red Sea (50-90??m). Comparison of eustatic estimates with benthic foraminiferal ??18O records shows that the deep sea cooled ??? 2.5????C between MIC 5e and 5d (??? 120-110??ka) and that near freezing conditions persisted until Termination 1a (14-15??ka). Sea-level variations between MIC 5b and 2 (ca. 90-20??ka) follow a well-accepted 0.1???/10??m linear variation predicted by ice-growth effects on foraminiferal ??18O values. The pattern of deep-sea cooling follows a previously established hysteresis loop between two stable modes of operation. Cold, near freezing deep-water conditions characterize most of the past 130??kyr punctuated only by two warm intervals (the Holocene/MIC 1 and MIC 5e). We link these variations to changes in Northern Component Water (NCW). ?? 2009 Elsevier B.V. All rights reserved.

  10. Late Pleistocene Sea level on the New Jersey Margin: Implications to eustasy and deep-sea temperature

    NASA Astrophysics Data System (ADS)

    Wright, James D.; Sheridan, Robert E.; Miller, Kenneth G.; Uptegrove, Jane; Cramer, Benjamin S.; Browning, James V.

    2009-03-01

    We assembled and dated a late Pleistocene sea-level record based on sequence stratigraphy from the New Jersey margin and compared it with published records from fossil uplifted coral reefs in New Guinea, Barbados, and Araki Island, as well as a composite sea-level estimate from scaling of Red Sea isotopic values. Radiocarbon dates, amino acid racemization data, and superposition constrain the ages of large (20-80 m) sea-level falls from New Jersey that correlate with Marine Isotope Chrons (MIC) 2, 3b, 4, 5b, and 6 (the past 130 kyr). The sea-level records for MIC 1, 2, 4, 5e, and 6 are similar to those reported from New Guinea, Barbados, Araki, and the Red Sea; some differences exist among records for MIC 3. Our record consistently provides the shallowest sea level estimates for MIC3 (˜ 25-60 m below present); it agrees most closely with the New Guinea record of Chappell (2002; ˜ 35-70 m), but contrasts with deeper estimates provided by Araki (˜ 85-95 m) and the Red Sea (50-90 m). Comparison of eustatic estimates with benthic foraminiferal δ18O records shows that the deep sea cooled ˜ 2.5 °C between MIC 5e and 5d (˜ 120-110 ka) and that near freezing conditions persisted until Termination 1a (14-15 ka). Sea-level variations between MIC 5b and 2 (ca. 90-20 ka) follow a well-accepted 0.1‰/10 m linear variation predicted by ice-growth effects on foraminiferal δ18O values. The pattern of deep-sea cooling follows a previously established hysteresis loop between two stable modes of operation. Cold, near freezing deep-water conditions characterize most of the past 130 kyr punctuated only by two warm intervals (the Holocene/MIC 1 and MIC 5e). We link these variations to changes in Northern Component Water (NCW).

  11. Community metabolism in a deep (stratified) tropical reservoir during a period of high water-level fluctuations.

    PubMed

    Valdespino-Castillo, Patricia M; Merino-Ibarra, Martín; Jiménez-Contreras, Jorge; Castillo-Sandoval, Fermín S; Ramírez-Zierold, Jorge A

    2014-10-01

    As long as lakes and reservoirs are an important component of the global carbon cycle, monitoring of their metabolism is required, especially in the tropics. In particular, the response of deep reservoirs to water-level fluctuations (WLF) is an understudied field. Here, we study community metabolism through oxygen dynamics in a deep monomictic reservoir where high WLF (~10 m) have recently occurred. Simultaneous monitoring of environmental variables and zooplankton dynamics was used to assess the effects of WLF on the metabolism of the eutrophic Valle de Bravo (VB) reservoir, where cyanobacteria blooms are frequent. Mean gross primary production (P g) was high (2.2 g C m(-2) day(-1)), but temporal variation of P g was low except for a drastic reduction during circulation attributed to zooplankton grazing. The trophogenic layer showed net autotrophy on an annual basis, but turned to net heterotrophy during mixing, and furthermore when the whole water-column oxygen balance was calculated, considering the aphotic respiration (Raphotic). The high total respiration resulting (3.1 g C m(-2) day(-1)) is considered to be partly due to mixing enhanced by WLF. Net ecosystem production was equivalent to a net export of 3.4 mg CO₂ m(-2) day(-1) to the atmosphere. Low water levels are posed to intensify boundary-mixing events driven by the wind during the stratification in VB. Long-term monitoring showed changes in the planktonic community and a strong silicon decrease that matched with low water-level periods. The effects of low water-level on metabolism and planktonic community in VB suggest that water-level manipulation could be a useful management tool to promote phytoplankton groups other than cyanobacteria.

  12. Room-temperature isopiestic distillation of in situ generated arsenious chloride and its application for the determination of trace level impurities in arsenious oxide.

    PubMed

    Chaurasia, Sheo Chandra; Sahayam, Athyala Christian; Mishra, Ranjan Kumar

    2002-12-01

    The room-temperature vapor pressures of HCl and AsCl3 in the presence of hydrochloric acid have been utilized in situ for the removal of arsenious oxide matrix as AsCl3 by isopiestic distillation. Reagent purification, sample dissolution, and matrix separation have been carried out in one step with a clean environment for both analyte and analyst. Quantitative recoveries have been achieved for most of the elements including volatile elements. Blank levels were found to be in nanograms per gram of As2O3 despite use of common reagents and simple reaction vessel. The utility of the present method for the analysis of As2O3 samples has been demonstrated.

  13. Influence of the Deep Water Horizon Oil Spill on Atmospheric Hydrocarbon Levels over the Gulf of Mexico

    NASA Astrophysics Data System (ADS)

    Blake, N. J.; Barletta, B.; Meinardi, S.; Leifer, I.; Rowland, F. S.; Blake, D. R.

    2010-12-01

    The waters of the Gulf of Mexico recently were impacted negatively by the large oil spill that occurred after an explosion at the BP Deep Water Horizon rig on April 20, 2010. In response to this disaster, and out of concern for the multitude of chemical pollutants being emitted, we collected 96 air samples in the Gulf region aboard the 65 ft vessel “R/V Eugenie” during 20-23 May, 2010. Sample analysis was by high sensitivity gas chromatographic analysis with special attention to the presence of possible toxic components. Analysis of each canister included straight-chain saturated hydrocarbons from C1 (methane) to C12 (dodecane), aromatic hydrocarbons such as benzene and toluene, as well as higher molecular weight species. High levels of C5-C12 alkanes and cyclo-alkanes, typical of crude oil, were observed in the atmosphere downwind of the spill location. However, the most soluble components, especially methane and benzene, were largely absent from the near-surface atmosphere implying dissolution in the deep sea, where they could impact negatively oxygen levels.

  14. Recent trends in the impurity profile of pharmaceuticals

    PubMed Central

    Pilaniya, Kavita; Chandrawanshi, Harish K.; Pilaniya, Urmila; Manchandani, Pooja; Jain, Pratishtha; Singh, Nitin

    2010-01-01

    Various regulatory authorities such as the International Conference on Harmonization (ICH), the United States Food and Drug administration (FDA), and the Canadian Drug and Health Agency (CDHA) are emphasizing on the purity requirements and the identification of impurities in Active Pharmaceutical Ingredients (APIs). The various sources of impurity in pharmaceutical products are — reagents, heavy metals, ligands, catalysts, other materials like filter aids, charcoal, and the like, degraded end products obtained during \\ after manufacturing of bulk drugs from hydrolysis, photolytic cleavage, oxidative degradation, decarboxylation, enantiomeric impurity, and so on. The different pharmacopoeias such as the British Pharmacopoeia, United State Pharmacopoeia, and Indian Pharmacopoeia are slowly incorporating limits to allowable levels of impurities present in APIs or formulations. Various methods are used to isolate and characterize impurities in pharmaceuticals, such as, capillary electrophoresis, electron paramagnetic resonance, gas–liquid chromatography, gravimetric analysis, high performance liquid chromatography, solid-phase extraction methods, liquid–liquid extraction method, Ultraviolet Spectrometry, infrared spectroscopy, supercritical fluid extraction column chromatography, mass spectrometry, Nuclear magnetic resonance (NMR) spectroscopy, and RAMAN spectroscopy. Among all hyphenated techniques, the most exploited techniques for impurity profiling of drugs are Liquid Chromatography (LC)-Mass Spectroscopy (MS), LC-NMR, LC-NMR-MS, GC-MS, and LC-MS. This reveals the need and scope of impurity profiling of drugs in pharmaceutical research. PMID:22247862

  15. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al{sub 0.7}Ga{sub 0.3}N

    SciTech Connect

    Armstrong, Andrew M. Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

    2015-05-14

    The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al{sub 0.7}Ga{sub 0.3}N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al{sub 0.7}Ga{sub 0.3}N.

  16. Deep uncertainty about the modes and tails of sea-level projections

    NASA Astrophysics Data System (ADS)

    Ruckert, Kelsey; Guan, Yawen; Forest, Chris; Keller, Klaus

    2015-04-01

    Sea-levels are generally rising around the world, posing nontrivial risks. Managing these risks hinges on sea-level rise projections and their associated uncertainties. Deriving sea-level projections presents nontrivial methodological challenges. Previous studies projecting sea-level rise have broken new ground, but typically adopt a single calibration method. Here we use a simple sea-level rise model to analyze and quantify the structural uncertainties driven by the choice of calibration method. In particular, we analyze a frequentist bootstrap method and a Bayesian approach (one with and one without the consideration of heteroskedastic errors). We show that the Bayesian approach with a heteroskedastic likelihood function performs best in hindcast experiments with respect to producing credible intervals with appropriate coverage. The choice of calibration method has considerable impacts on the modes and tails of the projections. Specifically, the modes vary across methods by more than 0.5 meters, in the year 2100. Arguably more important, the projected sea-levels with 1 in 100 and 1 in 10,000 exceedance probabilities vary by 2.5 and 3.5 meters. This structural uncertainty introduced by the choice of the statistical method has considerable implications for the design of sea-level rise adaptation strategies.

  17. Interaction of copper impurity with radiation defects in silicon doped with boron

    SciTech Connect

    Yarykin, N. A.; Weber, J.

    2010-08-15

    The spectrum of deep levels formed in boron-doped Czochralski-grown silicon single crystals as a result of interaction of radiation defects with copper impurity is studied. It is shown that, irrespective of the order of introduction of defects (both in the case of low-temperature copper diffusion into crystals preliminarily irradiated with electrons and in the case of irradiation of the samples contaminated with copper), the same set of deep levels appears. In addition to conventional radiation defects, three types of levels have been detected in the band gap of copper-containing crystals. These levels include the level E{sub v} + 0.49 eV (already mentioned in available publications), the level E{sub v} + 0.51 eV (previously not related to copper), and a level close to the donor level of a vacancy. Based on the analysis of concentration profiles, the interstitial carbonoxygen pair is excluded from possible precursors of the copper-containing center with level E{sub v} + 0.49 eV.

  18. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    SciTech Connect

    Islam, Muhammad Monirul Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka; Sakurai, Takeaki; Akimoto, Katsuhiro

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  19. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  20. Shear-deformation-potential constant of the conduction-band minima of Si: Experimental determination by the deep-level capacitance transient method

    NASA Astrophysics Data System (ADS)

    Li, Ming-Fu; Zhao, Xue-Shu; Gu, Zong-Quan; Chen, Jian-Xin; Li, Yan-Jin; Wang, Jian-Qing

    1991-06-01

    The shear-deformation-potential constant Ξu of the conduction-band minima of Si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. The uniaxial-stress (F) dependence of the electron emission rate en from deep levels to the split conduction-band minima of Si has been analyzed. Theoretical curves are in good agreement with experimental data for the S0 and S+ deep levels in Si. The values of Ξu obtained by the method are 11.1+/-0.3 eV at 148.9 K and 11.3+/-0.3 eV at 223.6 K. The analysis and the Ξu values obtained are also valuable for symmetry determination of deep electron traps in Si.

  1. Substitutional impurity in the graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Sierański, K.; Szatkowski, J.

    2015-09-01

    The process of formation of the localized defect states due to substitutional impurity in sp2-bonded graphene quantum dot is considered using a simple tight-binding-type calculation. We took into account the interaction of the quantum dot atoms surrounding the substitutional impurity from the second row of elements. To saturate the external dangling sp2 orbitals of the carbon additionally 18 hydrogen atoms were introduced. The chemical formula of the quantum dot is H18C51X, where X is the symbol of substitutional atom. The position of the localized levels is determined relative to the host-atoms (C) εp energies. We focused on the effect of substitutional doping by the B, N and O on the eigenstate energies and on the total energy change of the graphene dots including for O the effect of lattice distorsion. We conclude that B, N, and O can form stable substitutional defects in graphene quantum dot.

  2. Extrinsic germanium Blocked Impurity Bank (BIB) detectors

    NASA Technical Reports Server (NTRS)

    Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

    1989-01-01

    Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

  3. Classical impurities and boundary Majorana zero modes in quantum chains

    NASA Astrophysics Data System (ADS)

    Müller, Markus; Nersesyan, Alexander A.

    2016-09-01

    We study the response of classical impurities in quantum Ising chains. The Z2 degeneracy they entail renders the existence of two decoupled Majorana modes at zero energy, an exact property of a finite system at arbitrary values of its bulk parameters. We trace the evolution of these modes across the transition from the disordered phase to the ordered one and analyze the concomitant qualitative changes of local magnetic properties of an isolated impurity. In the disordered phase, the two ground states differ only close to the impurity, and they are related by the action of an explicitly constructed quasi-local operator. In this phase the local transverse spin susceptibility follows a Curie law. The critical response of a boundary impurity is logarithmically divergent and maps to the two-channel Kondo problem, while it saturates for critical bulk impurities, as well as in the ordered phase. The results for the Ising chain translate to the related problem of a resonant level coupled to a 1d p-wave superconductor or a Peierls chain, whereby the magnetic order is mapped to topological order. We find that the topological phase always exhibits a continuous impurity response to local fields as a result of the level repulsion of local levels from the boundary Majorana zero mode. In contrast, the disordered phase generically features a discontinuous magnetization or charging response. This difference constitutes a general thermodynamic fingerprint of topological order in phases with a bulk gap.

  4. Magnetic field dependence of the precursor diamagnetism in La superconductors with magnetic Pr impurities

    NASA Astrophysics Data System (ADS)

    Soto, F.; Carballeira, C.; Doval, J. M.; Mosqueira, J.; Ramallo, M. V.; Ramos-Álvarez, A.; Sóñora, D.; Verde, J. C.; Vidal, F.

    2015-06-01

    The interplay between fluctuating Cooper pairs and magnetic impurities in conventional BCS low-Tc superconductors has been studied through measurements of the magnetic field dependence of the fluctuation diamagnetism (FD) above Tc in lanthanum with praseodymium impurities. These measurements provide a crucial confirmation of our previous observation (F Soto et al 2006 Europhys. Lett. 73 587) that in the dilute impurity regime the FD increases almost linearly with the concentration of magnetic impurities. This striking effect is attributed to a variation due to the presence of the fluctuating Cooper pairs of the coupling between magnetic impurities. To describe these results at a phenomenological level, we propose a Gaussian Ginzburg-Landau model for the FD which includes an indirect contribution proportional to both the concentration of impurities and the density of the Cooper pairs. Our approach is able to explain simultaneously the FD increase due to magnetic impurities and its decrease with the application of large magnetic fields.

  5. Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

    SciTech Connect

    Chasin, Adrian Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul; Simoen, Eddy; Gielen, Georges

    2014-02-24

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

  6. Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates

    SciTech Connect

    Gonzalez, M.; Andre, C. L.; Walters, R. J.; Messenger, S. R.; Warner, J. H.; Lorentzen, J. R.; Pitera, A. J.; Fitzgerald, E. A.; Ringel, S. A.

    2006-08-01

    The effect of 2 MeV proton radiation on the introduction of deep levels in GaAs grown on compositionally graded SiGe/Si substrates was investigated using deep level transient spectroscopy (DLTS). Systematic comparisons were made with identical layers grown on both GaAs and Ge substrates to directly assess the influence of threading dislocations on radiation-related deep levels for both n-type and p-type GaAs. DLTS revealed that for p{sup +}n structures, proton irradiation generates electron traps at E{sub c}-0.14 eV, E{sub c}-0.25 eV, E{sub c}-0.54 eV, and E{sub c}-0.72 eV in the n-GaAs base, and, for n{sup +}p structures, radiation-induced hole traps appear at E{sub v}+0.18 eV, E{sub v}+0.23 eV, E{sub v}+0.27 eV, and E{sub v}+0.77 eV in the p-type GaAs base, irrespective of substrate choice for both polarities. The primary influence of substituting SiGe/Si substrates for conventional GaAs and Ge substrates is on the introduction rates of the individual traps as a function of proton radiation fluence. Substantially reduced concentrations are found for each radiation-induced hole trap observed in p-type GaAs, as well as for the E{sub c}-0.54 eV trap in n-GaAs for samples on SiGe/Si, as a function of proton fluence. Calculated trap introduction rates reveal reductions by as much as {approx}40% for certain hole traps in p-GaAs grown on SiGe/Si. This increased radiation tolerance for GaAs grown on SiGe/Si is attributed to interactions between the low density ({approx}10{sup 6} cm{sup -2}) of residual dislocations within the metamorphic GaAs/SiGe/Si structure and the radiation-induced point defects. Nevertheless, the fact that the impact of dislocations on radiation tolerance is far more dramatic for n{sup +}p GaAs structures compared to p{sup +}n structures, may have implications on future III-V/Si space solar cell design optimization, since end-of-life versus beginning-of-life differences are critical factors for power profiling in high radiation environments.

  7. Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates

    NASA Astrophysics Data System (ADS)

    Baranov, A. I.; Kleider, J. P.; Gudovskikh, A. S.; Darga, A.; Nikitina, E. V.; Egorov, A. Yu

    2016-08-01

    Defect properties of Ga(In)P(NAs) layers with different composition were studied by admittance spectroscopy. For nitrogen content layers the defect level with energy of 0.44-0.47 eV, which related to nitrogen incorporation into GaP, was observed. Its concentration is lower for GaPNAs layers compared to GaPN/InP due to better compensation by arsenic than by indium in lattice of GaP. Other defect level with energy of 0.30 eV was detected in GaPAs and GaPN/InP layers. Likely, the both observed defects in GaPAs and GaPN/InP have the same nature.

  8. Interactive Sea Level Rise App & Online Viewer Offers Deep Dive Into Climate

    NASA Astrophysics Data System (ADS)

    Turrin, M.; Porter, D. F.; Ryan, W. B. F.; Pfirman, S. L.

    2015-12-01

    Climate has captured the attention of the public but its complexity can cause interested individuals to turn to opinion pieces, news articles or blogs for information. These platforms often oversimplify or present heavily interpreted or personalized perspectives. Data interactives are an extremely effective way to explore complex geoscience topics like climate, opening windows of understanding for the user that have previously been closed. Layering data onto maps through programs like GeoMapApp and the Earth Observer App has allowed users to dig directly into science data, but with only limited scaffolding. The interactive 'Polar Explorer: Sea Level Explorer App' provides a richly layered introduction to a range of topics connected to sea level rise. Each map is supported with a pop up and a short audio file of supplementary material, and an information page that includes the data source and links for further reading. This type of learning platform works well for both the formal and informal learning environment. Through science data displayed as map visualizations the user is invited into topics through an introductory question, such as "Why does sea level change?" After clicking on that question the user moves to a second layer of questions exploring the role of the ocean, the atmosphere, the contribution from the world's glaciers, world's ice sheets and other less obvious considerations such as the role of post-glacial rebound, or the mining of groundwater. Each question ends in a data map, or series of maps, that offer opportunities to interact with the topic. Under the role of the ocean 'Internal Ocean Temperature' offers the user a chance to touch to see temperature values spatially over the world's ocean, or to click through a data series starting at the ocean surface and diving to 5000 meters of depth showing how temperature changes with depth. Other sections, like the role of deglaciation of North America, allow the user to click and see change through

  9. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Armstrong, Andrew M.; Allerman, Andrew A.; Baca, Albert G.; Sanchez, Carlos A.

    2013-07-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (RON) and threshold voltage (Vth) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted Vth positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 1012 cm-2. The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and RON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of RON (˜140%) compared to on-state drain stress (˜75%). Greater sensitivity of RON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of RON compared to Vth to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region.

  10. Investigation of defect properties in Cu(In,Ga)Se 2 solar cells by deep-level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Kerr, L. L.; Li, Sheng S.; Johnston, S. W.; Anderson, T. J.; Crisalle, O. D.; Kim, W. K.; Abushama, J.; Noufi, R. N.

    2004-09-01

    The performance of the chalcopyrite material Cu(In,Ga)Se 2 (CIGS) used as an absorber layer in thin-film photovoltaic devices is significantly affected by the presence of native defects. The deep-level transient spectroscopy (DLTS) technique is used in this work to characterize the defect properties, yielding relevant information about the defect types, their capture cross-sections, and energy levels and densities in the CIGS cells. Three solar cells developed using different absorber growth technologies were analyzed using DLTS, capacitance-voltage ( C- V), and capacitance-temperature ( C- T) techniques. It was found that CIS cells grown at the University of Florida exhibits a middle-gap defect level that may relate to the cell's low fill factor and open-circuit voltage values observed. A high efficiency ( ηc>18%) CIGS cell produced by the National Renewable Energy Laboratory (NREL) was found to contain three minority-carrier (electron) traps and a 13% CIGS cell produced by the Energy Photovoltaics Inc. (EPV) exhibited one majority (hole) trap. The approach followed using the DLTS technique serves as a paradigm for revealing the presence of significant defect levels in absorber materials, and may be used to support the identification of remedial processing operations.

  11. The level of red cell distribution width cannot identify deep vein thrombosis in patients undergoing total joint arthroplasty.

    PubMed

    Xu, Zhihong; Li, Lan; Shi, Dongquan; Chen, Dongyang; Dai, Jin; Yao, Yao; Teng, Huajian; Jiang, Qing

    2015-04-01

    Recently, studies have reported that increased level of red cell distribution width (RDW) is associated with deep vein thrombosis (DVT). We are aiming to evaluate the validity of RDW in DVT in patients undergoing total joint arthroplasty (TJA). A total of 110 patients (55 patients with DVT and 55 control individuals undergoing TJA) were included in this retrospective cross-sectional study. Age, sex, RDW, red blood cell count, D-dimer, hematocrit and hemoglobin levels of patients were matched. The relationship between RDW and DVT has been estimated. There is no statistical difference of RDW levels between the DVT group and the control group (13.12 ± 0.12 vs. 13.08 ± 0.13; P = 0.84). Pearson's correlation analysis showed that there were no significant associations between RDW and other referral groups. Logistic regression analysis indicated that RDW, red blood cell count, hemoglobin and hematocrit were not associated with DVT. Meanwhile, age, sex and D-dimer were independently associated with DVT. The receiver-operating characteristic curve and area under the curve demonstrated low accuracy of RDW in predicting DVT. Although D-dimer may identify the risk of venous thrombosis, the specificity and sensitivity were low. Preoperative level of RDW does not show predictive value for diagnosis of DVT in patients undergoing TJA. PMID:25806961

  12. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    SciTech Connect

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-07

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V{sub 2}) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  13. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    SciTech Connect

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-02

    In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  14. On the behaviour and origin of the major deep level (EL2) in GaAs

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Parsey, J. M.; Kaminska, M.; Wada, K.; Gatos, H. C.

    1982-01-01

    In an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.

  15. Identification of intrinsic deep level defects responsible for electret behavior in TlGaSe2 layered semiconductor

    NASA Astrophysics Data System (ADS)

    Seyidov, MirHasan Yu.; Mikailzade, Faik A.; Uzun, Talip; Odrinsky, Andrei P.; Yakar, Emin; Aliyeva, Vafa B.; Babayev, Sardar S.; Mammadov, Tofig G.

    2016-02-01

    Unusual behavior of pyroelectric current signal polarity near the Curie point (Tc) was observed for TlGaSe2 a ferroelectric-semiconductor. It has been revealed that the polarity of the spontaneous polarization near Tc depends on the sample poling prehistory. In particular, applying an external electric field only in the temperature range of the paraelectric state during cooling regime in darkness brought to the depolarization current at Tc with the sign opposite to the external field polarity. Otherwise, if the sample was poled in the temperature interval of the incommensurate phase, pyroelectric current exhibits a peak at Tc with the polarity that is the same as for the external poling electric field. These observations indicate that internal electric field is present in the bulk and near-surface layer regions of the electrically poled single crystal TlGaSe2. Possible mechanisms and origins responsible for the internal electric fields in TlGaSe2 are discussed. It is shown that the formation of internal electric fields in TlGaSe2 is due to charging of intrinsic native defects during the poling process. Characteristics of electrically active intrinsic defects in TlGaSe2 were investigated by using of Photo-Induced Current Transient Spectroscopy (PICTS) technique. Six deep defect levels in the band gap of TlGaSe2 were determined, which were localized both in the bulk and on the surface of the sample and could be electrically charged. The correlation between polarization effects and PICTS results has been established. It was shown that native deep defects (A3-A6) localized in the bulk of crystal are responsible for hetero-charge formation and negative sign of the pyroelectric current peak observed around the Curie temperature after poling the sample in the temperature intervals well above Tc. It was also shown that the positive sign pyrocurrent observed near the Curie point is attributed to the homo-charge formed by native A2-trapping centers which are localized near

  16. Deep levels induced by reactive ion etching in n- and p-type 4H-SiC

    SciTech Connect

    Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu; Krieger, Michael

    2010-07-15

    In this study, the authors investigate deep levels, which are induced by reactive ion etching (RIE) of n-type/p-type 4H-SiC, by deep level transient spectroscopy (DLTS). The capacitance of a Schottky contact fabricated on as-etched p-type SiC is abnormally small due to compensation or deactivation of acceptors extending to a depth of {approx}14 {mu}m, which is nearly equal to the epilayer thickness. The value of the capacitance can recover to that of a Schottky contact on as-grown samples after annealing at 1000 deg. C. However, various kinds of defects, IN2 (E{sub C}-0.30 eV), EN (E{sub C}-1.6 eV), IP1 (E{sub V}+0.30 eV), IP2 (E{sub V}+0.39 eV), IP4 (HK0: E{sub V}+0.72 eV), IP5 (E{sub V}+0.85 eV), IP7 (E{sub V}+1.3 eV), and EP (E{sub V}+1.4 eV), remain at a high concentration (average of total defect concentration in the region ranging from 0.3 {mu}m to 1.0 {mu}m:{approx}5x10{sup 14} cm{sup -3}) even after annealing at 1000 deg. C. The concentration of all these defects generated by RIE, except for the IP4 (HK0) center, remarkably decreases by thermal oxidation. In addition, the HK0 center can also be reduced significantly by a subsequent annealing at 1400 deg. C in Ar.

  17. Impurity bubbles in a BEC

    NASA Astrophysics Data System (ADS)

    Timmermans, Eddy; Blinova, Alina; Boshier, Malcolm

    2013-05-01

    Polarons (particles that interact with the self-consistent deformation of the host medium that contains them) self-localize when strongly coupled. Dilute Bose-Einstein condensates (BECs) doped with neutral distinguishable atoms (impurities) and armed with a Feshbach-tuned impurity-boson interaction provide a unique laboratory to study self-localized polarons. In nature, self-localized polarons come in two flavors that exhibit qualitatively different behavior: In lattice systems, the deformation is slight and the particle is accompanied by a cloud of collective excitations as in the case of the Landau-Pekar polarons of electrons in a dielectric lattice. In natural fluids and gases, the strongly coupled particle radically alters the medium, e.g. by expelling the host medium as in the case of the electron bubbles in superfluid helium. We show that BEC-impurities can self-localize in a bubble, as well as in a Landau-Pekar polaron state. The BEC-impurity system is fully characterized by only two dimensionless coupling constants. In the corresponding phase diagram the bubble and Landau-Pekar polaron limits correspond to large islands separated by a cross-over region. The same BEC-impurity species can be adiabatically Feshbach steered from the Landau-Pekar to the bubble regime. This work was funded by the Los Alamos LDRD program.

  18. Isolation and characterization of a potential process related impurity of phenazopyridine HCl by preparative HPLC followed by MS-MS and 2D-NMR spectroscopy.

    PubMed

    Rao, R Nageswara; Maurya, Pawan K; Raju, A Narasa

    2009-07-12

    During the process development of phenazopyridine HCl bulk drug, a potential impurity was detected in the routine impurity profiles by HPLC. Using MS-MS and multidimensional NMR techniques, the trace level impurity was unambiguously identified to be 3-phenyl-5-phenylazo-pyridine-2,6-diamine after its isolation from phenazopyridine HCl by semi-preparative HPLC. The formation of the impurity was discussed. To our knowledge, it is a novel impurity not reported elsewhere.

  19. Genetic variation in the fibrinogen gamma gene increases the risk for deep venous thrombosis by reducing plasma fibrinogen gamma' levels.

    PubMed

    Uitte de Willige, Shirley; de Visser, Marieke C H; Houwing-Duistermaat, Jeanine J; Rosendaal, Frits R; Vos, Hans L; Bertina, Rogier M

    2005-12-15

    We investigated the association between haplotypes of fibrinogen alpha (FGA), beta (FGB), and gamma (FGG), total fibrinogen levels, fibrinogen gamma' (gammaA/gamma' plus gamma'/gamma') levels, and risk for deep venous thrombosis. In a population-based case-control study, the Leiden Thrombophilia Study, we typed 15 haplotype-tagging single nucleotide polymorphisms (htSNPs) in this gene cluster. None of these haplotypes was associated with total fibrinogen levels. In each gene, one haplotype increased the thrombosis risk approximately 2-fold. After adjustment for linkage disequilibrium between the genes, only FGG-H2 homozygosity remained associated with risk (odds ratio [OR], 2.4; 95% confidence interval [95% CI], 1.5-3.9). FGG-H2 was also associated with reduced fibrinogen gamma' levels and reduced ratios of fibrinogen gamma' to total fibrinogen. Multivariate analysis showed that reduced fibrinogen gamma' levels and elevated total fibrinogen levels were both associated with an increased risk for thrombosis, even after adjustment for FGG-H2. A reduced fibrinogen gamma' to total fibrinogen ratio (less than 0.69) also increased the risk (OR, 2.4; 95% CI, 1.7-3.5). We propose that FGG-H2 influences thrombosis risk through htSNP 10034C/T [rs2066865] by strengthening the consensus of a CstF site and thus favoring the formation of gammaA chain above that of gamma' chain. Fibrinogen gamma' contains a unique high-affinity, nonsubstrate binding site for thrombin, which seems critical for the expression of the antithrombin activity that develops during fibrin formation (antithrombin 1).

  20. Chronic Deep Brain Stimulation of the Hypothalamic Nucleus in Wistar Rats Alters Circulatory Levels of Corticosterone and Proinflammatory Cytokines

    PubMed Central

    Calleja-Castillo, Juan Manuel; De La Cruz-Aguilera, Dora Luz; Manjarrez, Joaquín; Velasco-Velázquez, Marco Antonio; Morales-Espinoza, Gabriel; Moreno-Aguilar, Julia; Hernández, Maria Eugenia; Aguirre-Cruz, Lucinda

    2013-01-01

    Deep brain stimulation (DBS) is a therapeutic option for several diseases, but its effects on HPA axis activity and systemic inflammation are unknown. This study aimed to detect circulatory variations of corticosterone and cytokines levels in Wistar rats, after 21 days of DBS-at the ventrolateral part of the ventromedial hypothalamic nucleus (VMHvl), unilateral cervical vagotomy (UCVgX), or UCVgX plus DBS. We included the respective control (C) and sham (S) groups (n = 6 rats per group). DBS treated rats had higher levels of TNF-α (120%; P < 0.01) and IFN-γ (305%; P < 0.001) but lower corticosterone concentration (48%; P < 0.001) than C and S. UCVgX animals showed increased corticosterone levels (154%; P < 0.001) versus C and S. UCVgX plus DBS increased IL-1β (402%; P < 0.001), IL-6 (160%; P < 0.001), and corsticosterone (178%; P < 0.001 versus 48%; P < 0.001) compared with the C and S groups. Chronic DBS at VMHvl induced a systemic inflammatory response accompanied by a decrease of HPA axis function. UCVgX rats experienced HPA axis hyperactivity as result of vagus nerve injury; however, DBS was unable to block the HPA axis hyperactivity induced by unilateral cervical vagotomy. Further studies are necessary to explore these findings and their clinical implication. PMID:24235973

  1. High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

    NASA Astrophysics Data System (ADS)

    Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mannan, Mohammad A.; Mandal, Krishna C.

    2015-08-01

    High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 samples. The metal-semiconductor junctions were fabricated by photolithography and dc sputtering with ruthenium (Ru). The junction properties were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Detectors were characterized by alpha spectroscopy measurements in terms of energy resolution and charge collection efficiency using a 0.1 μCi 241Am radiation source. It was found that detectors fabricated from high work function rare transition metal Ru demonstrated very low leakage current and significant improvement of detector performance. Defect characterization of the epitaxial layers was conducted by deep level transient spectroscopy (DLTS) to thoroughly investigate the defect levels in the active region. The presence of a new defect level induced by this rare transition metal-semiconductor interface has been identified and characterized.

  2. Transverse Ising model with multi-impurity

    NASA Astrophysics Data System (ADS)

    Huang, Xuchu; Yang, Zhihua

    2015-05-01

    We study the transverse Ising spin model with spin-1 impurities under the exact solution. We develop a universal method to deal with the multi-impurity problem by introducing a displacement quantity in the wave function and get a recursive formula to simplify the calculation of the partition function. This allows us to rigorously determine the impurity effects for a specific distribution of impurity in the thermodynamic limit. The low temperature behaviors are governed by the interplay between host and impurity excitations, and the quantum critical fluctuations around the critical point of the transverse Ising model are tuned by the transverse field and the concentration of impurity. However the impurity effects are limited, which depends on the host-impurity exchange interaction and the coupling strength of impurities.

  3. EFFECT OF FUEL IMPURITIES ON FUEL CELL PERFORMANCE AND DURABILITY

    SciTech Connect

    Colon-Mercado, H.

    2010-09-28

    A fuel cell is an electrochemical energy conversion device that produces electricity during the combination of hydrogen and oxygen to produce water. Proton exchange membranes fuel cells are favored for portable applications as well as stationary ones due to their high power density, low operating temperature, and low corrosion of components. In real life operation, the use of pure fuel and oxidant gases results in an impractical system. A more realistic and cost efficient approach is the use of air as an oxidant gas and hydrogen from hydrogen carriers (i.e., ammonia, hydrocarbons, hydrides). However, trace impurities arising from different hydrogen sources and production increases the degradation of the fuel cell. These impurities include carbon monoxide, ammonia, sulfur, hydrocarbons, and halogen compounds. The International Organization for Standardization (ISO) has set maximum limits for trace impurities in the hydrogen stream; however fuel cell data is needed to validate the assumption that at those levels the impurities will cause no degradation. This report summarizes the effect of selected contaminants tested at SRNL at ISO levels. Runs at ISO proposed concentration levels show that model hydrocarbon compound such as tetrahydrofuran can cause serious degradation. However, the degradation is only temporary as when the impurity is removed from the hydrogen stream the performance completely recovers. Other molecules at the ISO concentration levels such as ammonia don't show effects on the fuel cell performance. On the other hand carbon monoxide and perchloroethylene shows major degradation and the system can only be recovered by following recovery procedures.

  4. Endohedral impurities in carbon nanotubes.

    PubMed

    Clougherty, Dennis P

    2003-01-24

    A generalization of the Anderson model that includes pseudo-Jahn-Teller impurity coupling is proposed to describe distortions of an endohedral impurity in a carbon nanotube. Within mean-field theory, spontaneous axial symmetry breaking is found when the vibronic coupling strength g exceeds a critical value. The effective potential is found to have O(2) symmetry, in agreement with numerical calculations. For metallic zigzag nanotubes endohedrally doped with transition metals in the dilute limit, the low-energy properties of the system may display two-channel Kondo behavior; however, strong vibronic coupling is seen to exponentially suppress the Kondo energy scale. PMID:12570507

  5. Endohedral Impurities in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Clougherty, Dennis

    2003-03-01

    A generalization of the Anderson model that includes pseudo-Jahn-Teller impurity coupling is proposed to describe distortions of an endohedral impurity in a carbon nanotube. Treating the distortion within mean-field theory, spontaneous axial symmetry breaking is found when the vibronic coupling strength g exceeds a critical value g_c. The effective potential in the symmetry-broken state is found to have O(2) symmetry, in agreement with numerical calculations. The consequences of such a distortion on electronic transport will be discussed.

  6. Endohedral Impurities in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Clougherty, Dennis P.

    2003-01-01

    A generalization of the Anderson model that includes pseudo-Jahn-Teller impurity coupling is proposed to describe distortions of an endohedral impurity in a carbon nanotube. Within mean-field theory, spontaneous axial symmetry breaking is found when the vibronic coupling strength g exceeds a critical value. The effective potential is found to have O(2) symmetry, in agreement with numerical calculations. For metallic zigzag nanotubes endohedrally doped with transition metals in the dilute limit, the low-energy properties of the system may display two-channel Kondo behavior; however, strong vibronic coupling is seen to exponentially suppress the Kondo energy scale.

  7. ALUMINUM IMPURITY DIFFUSION IN MAGNESIUM

    SciTech Connect

    Brennan, Sarah; Warren, Andrew; Coffey, Kevin; Kulkarni, Nagraj S; Todd, Peter J; Sohn, Yong Ho; Klimov, Mikhail

    2012-01-01

    The Al impurity diffusion in polycrystalline Mg (99.9%) via depth profiling with secondary ion mass spectrometry was studied in the temperature range of 673-573K, utilizing the thin film method and thin film solution to the diffusion equation. Multiple samples were utilized and multiple profiles were obtained to determine statistically confident coefficient with maximum standard deviation of 16%. Activation energy and pre-exponential factor of Al impurity diffusion in Mg was determined as 155 kJ/mole and 3.9 x 10-3 m2/sec.

  8. Thermal evolution and exhumation of deep-level batholithic exposures, southernmost Sierra Nevada, California

    USGS Publications Warehouse

    Saleeby, J.; Farley, K.A.; Kistler, R.W.; Fleck, R.J.

    2007-01-01

    The Tehachapi complex lies at the southern end of the Sierra Nevada batholith adjacent to the Neogene-Quaternary Garlock fault. The complex is composed principally of high-pressure (8-10 kbar) Cretaceous batholithic rocks, and it represents the deepest exposed levels of a continuous oblique crustal section through the southern Sierra Nevada batholith. Over the southern ???100 km of this section, structural/petrologic continuity and geochronological data indicate that ???35 km of felsic to intermediate-composition crust was generated by copious arc magmatism primarily between 105 and 99 Ma. In the Tehachapi complex, these batholithic rocks intrude and are bounded to the west by similar-composition gneissic-textured high-pressure batholithic rocks emplaced at ca. 115-110 Ma. This lower crustal complex is bounded below by a regional thrust system, which in Late Cretaceous time tectonically eroded the underlying mantle lithosphere, and in series displaced and underplated the Rand Schist subduction assemblage by low-angle slip from the outboard Franciscan trench. Geophysical and mantle xenolith studies indicate that the remnants of this shallow subduction thrust descend northward through the crust and into the mantle, leaving the mantle lithosphere intact beneath the greater Sierra Nevada batholith. This north-dipping regional structure records an inflection in the Farallon plate, which was segmented into a shallow subduc-tion trajectory to the south and a normal steeper trajectory to the north. We combine new and published data from a broad spectrum of thermochronom-eters that together form a coherent data array constraining the thermal evolution of the complex. Integration of these data with published thermobarometric and petro-genetic data also constrains the tectonically driven decompression and exhumation history of the complex. The timing of arc magmatic construction of the complex, as denoted above, is resolved by a large body of U/Pb zircon ages. High

  9. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

    SciTech Connect

    Zhang, Z.; Farzana, E.; Sun, W. Y.; Arehart, A. R.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Kyle, E. C. H.; Speck, J. S.

    2015-10-21

    The impact of annealing of proton irradiation-induced defects in n-type GaN devices has been systematically investigated using deep level transient and optical spectroscopies. Moderate temperature annealing (>200–250 °C) causes significant reduction in the concentration of nearly all irradiation-induced traps. While the decreased concentration of previously identified N and Ga vacancy related levels at E{sub C} − 0.13 eV, 0.16 eV, and 2.50 eV generally followed a first-order reaction model with activation energies matching theoretical values for N{sub I} and V{sub Ga} diffusion, irradiation-induced traps at E{sub C} − 0.72 eV, 1.25 eV, and 3.28 eV all decrease in concentration in a gradual manner, suggesting a more complex reduction mechanism. Slight increases in concentration are observed for the N-vacancy related levels at E{sub C} − 0.20 eV and 0.25 eV, which may be due to the reconfiguration of other N-vacancy related defects. Finally, the observed reduction in concentrations of the states at E{sub C} − 1.25 and E{sub C} − 3.28 eV as a function of annealing temperature closely tracks the detailed recovery behavior of the background carrier concentration as a function of annealing temperature. As a result, it is suggested that these two levels are likely to be responsible for the underlying carrier compensation effect that causes the observation of carrier removal in proton-irradiated n-GaN.

  10. RNA Deep Sequencing Reveals Novel Candidate Genes and Polymorphisms in Boar Testis and Liver Tissues with Divergent Androstenone Levels

    PubMed Central

    Gunawan, Asep; Sahadevan, Sudeep; Neuhoff, Christiane; Große-Brinkhaus, Christine; Gad, Ahmed; Frieden, Luc; Tesfaye, Dawit; Tholen, Ernst; Looft, Christian; Uddin, Muhammad Jasim; Schellander, Karl; Cinar, Mehmet Ulas

    2013-01-01

    Boar taint is an unpleasant smell and taste of pork meat derived from some entire male pigs. The main causes of boar taint are the two compounds androstenone (5α-androst-16-en-3-one) and skatole (3-methylindole). It is crucial to understand the genetic mechanism of boar taint to select pigs for lower androstenone levels and thus reduce boar taint. The aim of the present study was to investigate transcriptome differences in boar testis and liver tissues with divergent androstenone levels using RNA deep sequencing (RNA-Seq). The total number of reads produced for each testis and liver sample ranged from 13,221,550 to 33,206,723 and 12,755,487 to 46,050,468, respectively. In testis samples 46 genes were differentially regulated whereas 25 genes showed differential expression in the liver. The fold change values ranged from −4.68 to 2.90 in testis samples and −2.86 to 3.89 in liver samples. Differentially regulated genes in high androstenone testis and liver samples were enriched in metabolic processes such as lipid metabolism, small molecule biochemistry and molecular transport. This study provides evidence for transcriptome profile and gene polymorphisms of boars with divergent androstenone level using RNA-Seq technology. Digital gene expression analysis identified candidate genes in flavin monooxygenease family, cytochrome P450 family and hydroxysteroid dehydrogenase family. Moreover, polymorphism and association analysis revealed mutation in IRG6, MX1, IFIT2, CYP7A1, FMO5 and KRT18 genes could be potential candidate markers for androstenone levels in boars. Further studies are required for proving the role of candidate genes to be used in genomic selection against boar taint in pig breeding programs. PMID:23696805

  11. A generalized theory for determining the field-enhanced thermal emission rate by the reverse pulsed deep-level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Choi, Ghung G.; Li, Sheng S.

    1986-07-01

    A generalized theory for determining the field-enhanced thermal emission rates and carrier capture cross section of deep-level defects at very high field and for large trap density by the reverse pulsed deep-level transient spectroscopy technique has been developed in this paper. Using this new theory the field-enhanced emission rates for the DX center in a liquid-phase-epitaxial grown Sn-doped Al0.2Ga0.8As were determined for field strength up to 7×105 V/cm.

  12. Control of impurities in toroidal plasma devices

    DOEpatents

    Ohkawa, Tihiro

    1980-01-01

    A method and apparatus for plasma impurity control in closed flux plasma systems such as Tokamak reactors is disclosed. Local axisymmetrical injection of hydrogen gas is employed to reverse the normally inward flow of impurities into the plasma.

  13. Entanglement in quantum impurity problems is nonperturbative

    NASA Astrophysics Data System (ADS)

    Saleur, H.; Schmitteckert, P.; Vasseur, R.

    2013-08-01

    We study the entanglement entropy of a region of length 2L with the remainder of an infinite one-dimensional gapless quantum system in the case where the region is centered on a quantum impurity. The coupling to this impurity is not scale invariant, and the physics involves a crossover between weak- and strong-coupling regimes. While the impurity contribution to the entanglement has been computed numerically in the past, little is known analytically about it, since in particular the methods of conformal invariance cannot be applied because of the presence of a crossover length. We show in this paper that the small coupling expansion of the entanglement entropy in this problem is quite generally plagued by strong infrared divergences, implying a nonperturbative dependence on the coupling. The large coupling expansion turns out to be better behaved, thanks to powerful results from the boundary CFT formulation and, in some cases, the underlying integrability of the problem. However, it is clear that this expansion does not capture well the crossover physics. In the integrable case—which includes problems such as an XXZ chain with a modified link, the interacting resonant level model or the anisotropic Kondo model—a nonperturbative approach is in principle possible using form factors. We adapt in this paper the ideas of Cardy [J. Stat. Phys.JSTPBS0022-471510.1007/s10955-007-9422-x 130, 129 (2008)] and Castro-Alvaredo and Doyon [J. Stat. Phys.JSTPBS0022-471510.1007/s10955-008-9664-2 134, 105 (2009)] to the gapless case and show that, in the rather simple case of the resonant level model, and after some additional renormalizations, the form-factors approach yields remarkably accurate results for the entanglement all the way from short to large distances. This is confirmed by detailed comparison with numerical simulations. Both our form factor and numerical results are compatible with a nonperturbative form at short distance.

  14. A New Method for Reconstructing Sea-Level and Deep-Sea-Temperature Variability over the Past 5.3 Million Years

    NASA Astrophysics Data System (ADS)

    Rohling, E. J.

    2014-12-01

    Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (d18O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. We have recently presented a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. A serious of caveats applies to this new method, especially in older times of its application, as is always the case with new methods. Independent validation exercises are needed to elucidate where consistency exists, and where solutions drift away from each other. A key observation from our new method is that a large temporal offset existed during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. This observation relies on relative changes within the dataset, which are more robust than absolute values. I will discuss our method and its main caveats and avenues for improvement.

  15. Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, June 15, 1980-June 14, 1981

    SciTech Connect

    Wessels, B.W.

    1981-02-15

    High conductivity ZnSe single crystalline films have been heteroepitaxially deposited on GaAs substrates using open tube chemical vapor transport. Unintentionally doped films had net donor densities of 10/sup 14/ - 10/sup 16/ cm/sup -3/ and resistivities of 1 to 10/sup 3/ ohm cm. Resistivity was found to be strongly dependent upon zinc partial pressure during deposition. Electron mobilities of the order of 50 to 200 cm/sup 2//V sec were observed which suggested that the films are highly compensated. Properties of the deep level defects in heteroepitaxially grown ZnSe have been investigated using transient capacitance spectroscopy. A series of electron traps were observed with activation energies of 0.33, 0.35, 0.42, 0.71 and 0.86 eV in Au/ZnSe Schottky diodes. Trap concentration ranged from 10/sup 12/ to 10/sup 14/ cm/sup -3/ and depended on the zinc partial pressure. A model for the defect structure of ZnSe was proposed. Growth studies of ZnS/sub x/Se/sub 1-x/ on GaAs were begun.

  16. Band edge and phonon-assisted deep level emissions in the ordered filled tetrahedral semiconductor LiMgP

    NASA Astrophysics Data System (ADS)

    Kuriyama, K.; Kushida, K.

    2000-03-01

    Band edge and phonon-assisted deep level emissions in the ordered filled tetrahedral semiconductor LiMgP (space group: F4¯3m, direct band gap: 2.43 eV at room temperature), viewed as a zincblende-like (MgP)- lattice partially filled with He-like Li+ interstitials, have been studied using a photoluminescence (PL) method. Two band edge emissions A and B, consisting of two PL peaks, were observed at around 489 nm at 15 K. Emissions A and B were associated with a free carrier recombination (2.535 eV) and a donor-to-valence band transition (2.532 eV), respectively. From the temperature dependence of the band edge emission and optical absorption data, the temperature variation of the band gap was approximated by the empirical formula Eg(eV)=2.536-1.43×10-3T2/(T+912) (T in K). A broad emission involving at least three phonon lines was observed at around 625 nm with full width at half maximum of ˜150 meV, showing a large Franck-Condon shift. The main phonon lines in the broad PL emission were associated with two combinations of longitudinal-optical phonons relating to Li-P and Mg-P pairs.

  17. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    DOE PAGES

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-02

    In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capturemore » cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.« less

  18. Study of the effects of impurities on the properties of silicon solar cell

    NASA Technical Reports Server (NTRS)

    Sah, C. T.

    1981-01-01

    The effect of defects across the back-surface-field junction on the performance of high efficiency and thin solar cells, using a developed-perimeter device model for the three-dimensional defects is investigated. Significant degradation of open-circuit voltage can occur even if there are only a few defects distributed in the bulk of the solar cell. Two features in the thickness dependences of the fill factor and efficiency in impurity-doped back-surface-field solar cells are discovered in the exact numerical solution which are associated with the high injection level effect in the base and not predicted by the low-level analytical theory. What are believed to be the most accurate recombination parameters at the Ti center to date are also given and a theory is developed which is capable of distinguishing an acceptor-like deep level from a donor-like deep level using the measured values of the thermal emission and capture cross sections.

  19. Impurity control studies using SOL flow in DIII-D

    SciTech Connect

    Wade, M.R.; Hogan, J.T.; Isler, R.C.

    1998-11-01

    Experiments on DIII-D have demonstrated the efficacy of using induced scrape-off-layer (SOL) flow to preferentially enrich impurities in the divertor plasma. This SOL flow is produced through simultaneous deuterium gas injection at the midplane and divertor exhaust. Using this SOL flow, an improvement in enrichment (defined as the ratio of impurity fraction in the divertor to that in the plasma core) has been observed for all impurities in trace-level experiments (i.e., impurity level is non-perturbative), with the degree of improvement increasing with impurity atomic number. In the case of argon, exhaust gas enrichment using a modest SOL flow is as high as 17. Using this induced SOL flow technique and argon injection, radiative ELMing H-mode plasmas have been produced that combine high radiation losses (P{sub rad}/P{sub input} > 70%), low core fuel dilution (Z{sub eff} < 1.9), and good core confinement ({tau}{sub E} > 1.0 {tau}{sub E},ITER93H).

  20. Fundamental aspects of metallic impurities and impurity interactions in silicon during device processing

    SciTech Connect

    Graff, K.

    1995-08-01

    A review on the behavior of metallic impurities in silicon can be considerably simplified by a restriction on pure, dislocation-free, monocrystalline silicon. In this case interactions between different impurities and between impurities and grown-in lattice defects can be reduced. This restriction is observed in Chapter 1 for discussing the general behavior of metallic impurities in silicon.

  1. Individual and Partner-Level Factors Associated with Condom Non-Use Among African American STI Clinic Attendees in the Deep South: An Event-Level Analysis.

    PubMed

    Marshall, Brandon D L; Perez-Brumer, Amaya G; MacCarthy, Sarah; Mena, Leandro; Chan, Philip A; Towey, Caitlin; Barnett, Nancy; Parker, Sharon; Barnes, Arti; Brinkley-Rubinstein, Lauren; Rose, Jennifer S; Nunn, Amy S

    2016-06-01

    The US HIV/AIDS epidemic is concentrated in the Deep South, yet factors contributing to HIV transmission are not fully understood. We examined relationships between substance use, sexual partnership characteristics, and condom non-use in an African American sample of STI clinic attendees in Jackson, Mississippi. We assessed condom non-use at last intercourse with up to three recent sexual partners reported by participants between January and June 2011. Participant- and partner-level correlates of condom non-use were examined using generalized estimating equations. The 1295 participants reported 2880 intercourse events, of which 1490 (51.7 %) involved condom non-use. Older age, lower educational attainment, reporting financial or material dependence on a sex partner, sex with a primary partner, and higher frequency of sex were associated with increased odds of condomless sex. HIV prevention efforts in the South should address underlying socioeconomic disparities and structural determinants that result in partner dependency and sexual risk behavior. PMID:26683032

  2. Detection of surface impurity phases in high T.sub.C superconductors using thermally stimulated luminescence

    DOEpatents

    Cooke, D. Wayne; Jahan, Muhammad S.

    1989-01-01

    Detection of surface impurity phases in high-temperature superconducting materials. Thermally stimulated luminescence has been found to occur in insulating impurity phases which commonly exist in high-temperature superconducting materials. The present invention is sensitive to impurity phases occurring at a level of less than 1% with a probe depth of about 1 .mu.m which is the region of interest for many superconductivity applications. Spectroscopic and spatial resolution of the emitted light from a sample permits identification and location of the impurity species. Absence of luminescence, and thus of insulating phases, can be correlated with low values of rf surface resistance.

  3. A biosphere modeling methodology for dose assessments of the potential Yucca Mountain deep geological high level radioactive waste repository.

    PubMed

    Watkins, B M; Smith, G M; Little, R H; Kessler, J

    1999-04-01

    Recent developments in performance standards for proposed high level radioactive waste disposal at Yucca Mountain suggest that health risk or dose rate limits will likely be part of future standards. Approaches to the development of biosphere modeling and dose assessments for Yucca Mountain have been relatively lacking in previous performance assessments due to the absence of such a requirement. This paper describes a practical methodology used to develop a biosphere model appropriate for calculating doses from use of well water by hypothetical individuals due to discharges of contaminated groundwater into a deep well. The biosphere model methodology, developed in parallel with the BIOMOVS II international study, allows a transparent recording of the decisions at each step, from the specification of the biosphere assessment context through to model development and analysis of results. A list of features, events, and processes relevant to Yucca Mountain was recorded and an interaction matrix developed to help identify relationships between them. Special consideration was given to critical/potential exposure group issues and approaches. The conceptual model of the biosphere system was then developed, based on the interaction matrix, to show how radionuclides migrate and accumulate in the biosphere media and result in potential exposure pathways. A mathematical dose assessment model was specified using the flexible AMBER software application, which allows users to construct their own compartment models. The starting point for the biosphere calculations was a unit flux of each radionuclide from the groundwater in the geosphere into the drinking water in the well. For each of the 26 radionuclides considered, the most significant exposure pathways for hypothetical individuals were identified. For 14 of the radionuclides, the primary exposure pathways were identified as consumption of various crops and animal products following assumed agricultural use of the contaminated

  4. Impurity/defect interactions during MeV Si{sup +} ion implantation annealing

    SciTech Connect

    Agarwal, A.; Koveshnikov, S.; Christensen, K.

    1995-08-01

    Ion implantation of dopant atoms at MeV energies is currently being explored in several integrated circuit device manufacturing processes. MeV implantation offers immediate advantages such as vertical well modulation, latch-up protection, device structure isolation, and reduced temperature processing. Simultaneously, it presents an opportunity to achieve {open_quotes}proximity{close_quotes} gettering of impurities from the active device region by placing high impurity solubility and/or secondary defect gettering sites within microns of the surface. If the MeV implanted species is a dopant ion, all three gettering mechanisms, i.e, segregation, relaxation and injection, can be involved in the gettering process, complicating the analysis and optimization of the process. However, investigation of gettering using non-dopant Si{sup +} ion damage allows the relaxation component of the gettering process to be isolated and examined separately. In general, gettering is verified by a reduction in impurity concentration in the region of interest, usually the device region, and/or a build-up of concentration/precipitation in a non-device sink region. An alternate and more meaningful approach is to use simple devices as materials characterization probes via changes in the electrical activity of the gettering sites. Device space charge probes also allow the evolution of the defect sites upon contamination to be tracked. We report here results of the electrical, structural, and chemical characterization of MeV implanted Si{sup +} damage using Deep Level Transient Spectroscopy (DLTS), Transmission Electron Microscopy (TEM), and Secondary Ion Mass Spectroscopy (SIMS). The damage has been characterized both as a function of annealing from 600 to 1100{degrees}C for 1 hr, and after contamination with Fe followed by low temperature gettering annealing.

  5. Observation of impurity accumulation and concurrent impurity influx in PBX

    SciTech Connect

    Sesnic, S.S.; Fonck, R.J.; Ida, K.; Bol, K.; Couture, P.; Gammel, G.; Kaita, R.; Kaye, S.; Kugel, H.; LeBlanc, B.

    1986-07-01

    Impurity studies in L- and H-mode discharges in PBX have shown that both types of discharges can evolve into either an impurity accumulative or nonaccumulative case. In a typical accumulative discharge, Zeff peaks in the center to values of about 5. The central metallic densities can be high, n/sub met//n/sub e/ approx. = 0.01, resulting in central radiated power densities in excess of 1 W/cm/sup 3/, consistent with bolometric estimates. The radial profiles of metals obtained independently from the line radiation in the soft x-ray and the VUV regions are very peaked. Concurrent with the peaking, an increase in the impurity influx coming from the edge of the plasma is observed. At the beginning of the accumulation phase the inward particle flux for titanium has values of 6 x 10/sup 10/ and 10 x 10/sup 10/ particles/cm/sup 2/s at minor radii of 6 and 17 cm. At the end of the accumulation phase, this particle flux is strongly increased to values of 3 x 10/sup 12/ and 1 x 10/sup 12/ particles/cm/sup 2/s. This increased flux is mainly due to influx from the edge of the plasma and to a lesser extent due to increased convective transport. Using the measured particle flux, an estimate of the diffusion coefficient D and the convective velocity v is obtained.

  6. Student Perceptions of Science Teacher Actions in Two Culturally Diverse Middle-Level Science Classrooms: A Case Study in the American Deep South.

    ERIC Educational Resources Information Center

    McGinnis, J. Randy

    The purpose of this study was to give voice to students' perceptions in two science classrooms taught by two white teachers in an urban multicultural middle-level school situated in the American Deep South. Student participants were 35 students of different ethnicities in grades 7 and 8. The theoretical reference used is social contextual, a…

  7. Revealing substructures of H4 and H5 hole traps in p-type InP using Laplace deep-level transient spectroscopy

    SciTech Connect

    Darwich, R.; Mani, A. A.

    2010-08-15

    New substructures of H4 and H5 hole traps have been revealed using Laplace deep-level transient spectroscopy. Our measurements show that the hole traps H4 and H5 can have at least three components for each. Moreover, the activation energies are deduced and the microscopic nature of these substructures is discussed.

  8. Particle fueling and impurity control in PDX

    SciTech Connect

    Fonck, R.J.; Bell, M.; Bol, K.; Budny, R.; Couture, P.; Darrow, D.; Dylla, H.; Goldston, R.; Grek, B.; Hawryluk, R.

    1984-12-01

    Fueling requirements and impurity levels in neutral-beam-heated discharges in the PDX tokamak have been compared for plasmas formed with conventional graphite rail limiters, a particle scoop limiter, and an open or closed poloidal divertor. Gas flows necessary to obtain a given density are highest for diverted discharges and lowest for the scoop limiter. Hydrogen pellet injection provides an efficient alternate fueling technique, and a multiple pellet injector has produced high density discharges for an absorbed neutral beam power of up to 600 kW, above which higher speeds or more massive pellets are required for penetration to the plasma core. Power balance studies indicate that 30 to 40% of the total input power is radiated while approx. 15% is absorbed by the limiting surface, except in the open divertor case, where 60% flows to the neutralizer plate. In all operating configurations, Z/sub eff/ usually rises at the onset of neutral beam injection. Both open divertor plasmas and those formed on a well conditioned water-cooled limiter have Z/sub eff/ less than or equal to 2 at the end of neutral injection. A definitive comparison of divertors and limiters for impurity control purposes requires longer beam pulses or higher power levels than available on present machines.

  9. Particle fueling and impurity control in PDX

    NASA Astrophysics Data System (ADS)

    Fonck, R. J.; Bell, M.; Bol, K.; Budny, R.; Couture, P.; Darrow, D.; Dylla, H.; Goldston, R.; Grek, B.; Hawryluk, R.; Ida, K.; Jaehnig, K.; Johnson, D.; Kaita, R.; Kaye, S.; Kugel, H.; Leblanc, B.; Mansfield, D.; Mcbride, T.; Mcguire, K.; Milora, S.; Mueller, D.; Okabayashi, M.; Owens, D.; Post, D.; Reusch, M.; Schmidt, G.; Sesnic, S.; Takahashi, H.; Tenney, F.; Ulrickson, M.

    1984-12-01

    Fueling requirements and impurity levels in neutral-beam-heated discharges in the PDX tokamak have been compared for plasmas formed with conventional graphite rail limiters, a particle scoop limiter, and an open or closed poloidal divertor. Gas flows necessary to obtain a given density are highest for diverted discharges and lowest for the scoop limiter. Hydrogen pellet injection provides an efficient alternative fueling technique, and a multiple pellet injector has produced high density discharges for an absorbed neutral beam power of up to 600 kW, above which higher speeds or more massive pellets are required for penetration to the plasma core. Power balance studies indicate that 30-40% of the total input power is radiated while ~15% is absorbed by the limiting surface, except in the open divertor case, where 60% flows to the neutralizer plate. In all operating configurations, Zeff usually rises at the onset of neutral beam injection. Both open divertor pl;asmas and those formed on a well conditioned water-cooled limiter have Zeff ⪅ 2 at the end of neutral injection. A definitive comparison of divertors and limiters for impurity control purposes requires longer beam pulses or higher power levels than available on present machines.

  10. Terrestrial source to deep-sea sink sediment budgets at high and low sea levels: Insights from tectonically active Southern California

    USGS Publications Warehouse

    Covault, J.A.; Romans, B.W.; Graham, S.A.; Fildani, A.; Hilley, G.E.

    2011-01-01

    Sediment routing from terrestrial source areas to the deep sea influences landscapes and seascapes and supply and filling of sedimentary basins. However, a comprehensive assessment of land-to-deep-sea sediment budgets over millennia with significant climate change is lacking. We provide source to sink sediment budgets using cosmogenic radionuclide-derived terrestrial denudation rates and submarine-fan deposition rates through sea-level fluctuations since oxygen isotope stage 3 (younger than 40 ka) in tectonically active, spatially restricted sediment-routing systems of Southern California. We show that source-area denudation and deep-sea deposition are balanced during a period of generally falling and low sea level (40-13 ka), but that deep-sea deposition exceeds terrestrial denudation during the subsequent period of rising and high sea level (younger than 13 ka). This additional supply of sediment is likely owed to enhanced dispersal of sediment across the shelf caused by seacliff erosion during postglacial shoreline transgression and initiation of submarine mass wasting. During periods of both low and high sea level, land and deep-sea sediment fluxes do not show orders of magnitude imbalances that might be expected in the wake of major sea-level changes. Thus, sediment-routing processes in a globally significant class of small, tectonically active systems might be fundamentally different from those of larger systems that drain entire orogens, in which sediment storage in coastal plains and wide continental shelves can exceed millions of years. Furthermore, in such small systems, depositional changes offshore can reflect onshore changes when viewed over time scales of several thousand years to more than 10 k.y. ?? 2011 Geological Society of America.

  11. Deep learning

    NASA Astrophysics Data System (ADS)

    Lecun, Yann; Bengio, Yoshua; Hinton, Geoffrey

    2015-05-01

    Deep learning allows computational models that are composed of multiple processing layers to learn representations of data with multiple levels of abstraction. These methods have dramatically improved the state-of-the-art in speech recognition, visual object recognition, object detection and many other domains such as drug discovery and genomics. Deep learning discovers intricate structure in large data sets by using the backpropagation algorithm to indicate how a machine should change its internal parameters that are used to compute the representation in each layer from the representation in the previous layer. Deep convolutional nets have brought about breakthroughs in processing images, video, speech and audio, whereas recurrent nets have shone light on sequential data such as text and speech.

  12. Deep learning.

    PubMed

    LeCun, Yann; Bengio, Yoshua; Hinton, Geoffrey

    2015-05-28

    Deep learning allows computational models that are composed of multiple processing layers to learn representations of data with multiple levels of abstraction. These methods have dramatically improved the state-of-the-art in speech recognition, visual object recognition, object detection and many other domains such as drug discovery and genomics. Deep learning discovers intricate structure in large data sets by using the backpropagation algorithm to indicate how a machine should change its internal parameters that are used to compute the representation in each layer from the representation in the previous layer. Deep convolutional nets have brought about breakthroughs in processing images, video, speech and audio, whereas recurrent nets have shone light on sequential data such as text and speech.

  13. Deep learning.

    PubMed

    LeCun, Yann; Bengio, Yoshua; Hinton, Geoffrey

    2015-05-28

    Deep learning allows computational models that are composed of multiple processing layers to learn representations of data with multiple levels of abstraction. These methods have dramatically improved the state-of-the-art in speech recognition, visual object recognition, object detection and many other domains such as drug discovery and genomics. Deep learning discovers intricate structure in large data sets by using the backpropagation algorithm to indicate how a machine should change its internal parameters that are used to compute the representation in each layer from the representation in the previous layer. Deep convolutional nets have brought about breakthroughs in processing images, video, speech and audio, whereas recurrent nets have shone light on sequential data such as text and speech. PMID:26017442

  14. Control of impurity concentration in liquid metals by neutron scattering

    SciTech Connect

    Morozov, V. A.; Novikov, A. G.; Savostin, V. V.

    2011-12-15

    A technique is proposed for determining the impurity concentration in liquid metal-impurity systems. This technique does not require special measurements or geometry: information about the impurity concentration can be obtained directly from the data collected during the diffraction experiment. The impurity concentrations in a lead melt with a potassium impurity and in a sodium melt with a lead impurity are determined.

  15. Self-pumping impurity control

    DOEpatents

    Brooks, J.N.; Mattas, R.F.

    1983-12-21

    It is an object of the present invention to provide an apparatus for removing impurities from the plasma in a fusion reactor without an external vacuum pumping system. It is also an object of the present invention to provide an apparatus for removing the helium ash from a fusion reactor. It is another object of the present invention to provide an apparatus which removes helium ash and minimizes tritium recycling and inventory.

  16. Screening for impurities in butoprozine.

    PubMed

    Drenth, B F; Jagersma, T; Wormeester, A J; de Zeeuw, R A

    1983-08-26

    The purity analysis of butoprozine is described. Both gas chromatography-mass spectrometry (GC-MS) and high pressure liquid chromatography (HPLC) with UV-vis detection (conventional and multichannel) were used. In the butoprozine example disadvantages for both techniques became apparent: incorrect conclusions with regard to the purity of the drug would have been drawn if only one of these chromatographic techniques had been used. GC-MS allowed the identification of an impurity not found by HPLC. PMID:6622208

  17. Impurity diffusion in transition-metal oxides

    SciTech Connect

    Peterson, N.L.

    1982-06-01

    Intrinsic tracer impurity diffusion measurements in ceramic oxides have been primarily confined to CoO, NiO, and Fe/sub 3/O/sub 4/. Tracer impurity diffusion in these materials and TiO/sub 2/, together with measurements of the effect of impurities on tracer diffusion (Co in NiO and Cr in CoO), are reviewed and discussed in terms of impurity-defect interactions and mechanisms of diffusion. Divalent impurities in divalent solvents seem to have a weak interaction with vacancies whereas trivalent impurities in divalent solvents strongly influence the vacancy concentrations and significantly reduce solvent jump frequencies near a trivalent impurity. Impurities with small ionic radii diffuse more slowly with a larger activation energy than impurities with larger ionic radii for all systems considered in this review. Cobalt ions (a moderate size impurity) diffuse rapidly along the open channels parallel to the c-axis in TiO/sub 2/ whereas chromium ions (a smaller-sized impurity) do not. 60 references, 11 figures.

  18. Gaseous trace impurity analyzer and method

    DOEpatents

    Edwards, Jr., David; Schneider, William

    1980-01-01

    Simple apparatus for analyzing trace impurities in a gas, such as helium or hydrogen, comprises means for drawing a measured volume of the gas as sample into a heated zone. A segregable portion of the zone is then chilled to condense trace impurities in the gas in the chilled portion. The gas sample is evacuated from the heated zone including the chilled portion. Finally, the chilled portion is warmed to vaporize the condensed impurities in the order of their boiling points. As the temperature of the chilled portion rises, pressure will develop in the evacuated, heated zone by the vaporization of an impurity. The temperature at which the pressure increase occurs identifies that impurity and the pressure increase attained until the vaporization of the next impurity causes a further pressure increase is a measure of the quantity of the preceding impurity.

  19. Volatile impurities in the ceramic form for the Plutonium Immobilization Project (PIP)

    SciTech Connect

    Cozzi, A.D.

    2000-03-02

    The primary goal for the impurity tests performed at SRS was to determine the maximum level of volatile impurities that can be accommodated into the ceramic form without significantly affecting product properties. The properties investigated in this study are the apparent porosity and the phase assemblage.

  20. Effect of hydrogenic impurity on the third-harmonic generation in a quantum well

    NASA Astrophysics Data System (ADS)

    Zhang, Zhongmin; Guo, Kangxian; Mou, Sen; Xiao, Bo; Liao, Lei

    2014-12-01

    The third-harmonic generation (THG) coefficients in a quantum well with hydrogenic impurity are theoretically investigated with the compact-density-matrix approach and iterative method. The wave functions and the energy levels can be obtained by using variational method and numerical method. Numerical results show that the THG coefficients are strongly affected by the hydrogenic impurity.

  1. Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

    SciTech Connect

    Simimol, A.; Manikandanath, N. T.; Chowdhury, Prasanta; Barshilia, Harish C.; Anappara, Aji A.

    2014-08-21

    Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (T{sub A} = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (V{sub O}), zinc interstitial (Zn{sub i}), and oxygen interstitial (O{sub i}) defects and these can be reduced significantly by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for T{sub A} greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for T{sub A} ≥ 450 °C in the oxygen and air environments, the density of O{sub i} defects increased, whereas, the green emission associated with V{sub O} is dominant in the vacuum annealed (T{sub A} = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications.

  2. Studies of impurity behavior in TFTR

    SciTech Connect

    Hill, K.W.; Bitter, M.; Bretz, N.L.; Diesso, M.; Efthimion, P.C.; Von Goeler, S.; Kiraly, J.; Ramsey, A.T.; Sauthoff, N.R.; Schivell, J.

    1986-03-01

    Central medium- and low-Z impurity concentrations and Z/sub eff/ have been measured by x-ray spectrometry in Tokamak Fusion Test Reactor discharges during three periods of operation. These were the (1) start-up period, (2) ohmic heating, and (3) ohmic heating portion of the two neutral beam periods, distinguished mainly by different vacuum vessel internal hardware and increasing plasma current and toroidal field capability. Plasma parameters spanned minor radius a = 0.41 - 0.83 m, major radius R = 2.1 - 3.1 m, current I/sub p = 0.25 - 2.0 MA, line-averaged electron density n-bar/sub e/ = 0.9 - 4.0 x 10/sup 19/ m/sup -3/, and toroidal magnetic field B/sub T/ = 1.8 - 4.0 T. The metal impurities came mostly from the limiter. At low densities titanium or nickel approached 1% of n/sub e/ during operation on a TiC-coated graphite or Inconel limiter, respectively. Lower levels of Cr, Fe, and Ni (less than or equal to0.1%) were observed with a graphite limiter at similarly low densities; these elements were removed mainly from stainless steel or Inconel hardware within the vacuum vessel during pulse discharge cleaning or plasma operation on an Inconel limiter and then deposited on the graphite limiter. Hardware closest to the graphite limiter contributed most to the deposits.

  3. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur in... reactions. (iv) The possible degradation of the ingredients in the product after its production but prior to its use. (v) Post-production reactions between the ingredients in the product. (vi) The...

  4. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur in... reactions. (iv) The possible degradation of the ingredients in the product after its production but prior to its use. (v) Post-production reactions between the ingredients in the product. (vi) The...

  5. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur in... reactions. (iv) The possible degradation of the ingredients in the product after its production but prior to its use. (v) Post-production reactions between the ingredients in the product. (vi) The...

  6. 40 CFR 158.340 - Discussion of formation of impurities.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... range of levels) of these impurities. (iii) The intended reactions and side reactions which may occur in... reactions. (iv) The possible degradation of the ingredients in the product after its production but prior to its use. (v) Post-production reactions between the ingredients in the product. (vi) The...

  7. Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

    SciTech Connect

    Rangel-Kuoppa, Victor-Tapio; Chen Gang; Jantsch, Wolfgang

    2011-12-23

    Temperature dependent Capacitance-Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3x10{sup 11} cm{sup -2}. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 10{sup 16} cm{sup -3}, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2x10{sup 15} cm{sup -3} and 5x10{sup 15} cm{sup -3}, are also found. TCV results suggest they are related to the Ge QDs.

  8. I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Madhu, K. V.; Kulkarni, S. R.; Ravindra, M.; Damle, R.

    A commercial bipolar junction transistor (2N 2219A, npn) irradiated with 84 MeV O6+-ions with fluence of the order of 1013 ions cm-2 is studied for radiation-induced gain degradation and deep-level defects or recombination centers. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep-level transient spectroscopy. Minority carrier trap energy levels with energies ranging from EC -0.17 eV to EC -0.55 eV are observed in the base-collector junction of the transistor. Majority carrier defect levels are also observed with energies ranging from EV +0.26 eV to EV +0.44 eV. The irradiated device is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for an increase in base current through Shockley-Read-Hall or multi-phonon recombination and consequent transistor gain degradation.

  9. Some logistical considerations in designing a system of deep boreholes for disposal of high-level radioactive waste.

    SciTech Connect

    Gray, Genetha Anne; Brady, Patrick Vane; Arnold, Bill Walter

    2012-09-01

    Deep boreholes could be a relatively inexpensive, safe, and rapidly deployable strategy for disposing Americas nuclear waste. To study this approach, Sandia invested in a three year LDRD project entitled %E2%80%9CRadionuclide Transport from Deep Boreholes.%E2%80%9D In the first two years, the borehole reference design and backfill analysis were completed and the supporting modeling of borehole temperature and fluid transport profiles were done. In the third year, some of the logistics of implementing a deep borehole waste disposal system were considered. This report describes what was learned in the third year of the study and draws some conclusions about the potential bottlenecks of system implementation.

  10. Ecological niches of Arctic deep-sea copepods: Vertical partitioning, dietary preferences and different trophic levels minimize inter-specific competition

    NASA Astrophysics Data System (ADS)

    Laakmann, Silke; Kochzius, Marc; Auel, Holger

    2009-05-01

    The biodiversity of pelagic deep-sea ecosystems has received growing scientific interest in the last decade, especially in the framework of international marine biodiversity initiatives, such as Census of Marine Life (CoML). While a growing number of deep-sea zooplankton species has been identified and genetically characterized, little information is available on the mechanisms minimizing inter-specific competition and thus allowing closely related species to co-occur in the deep-sea pelagic realm. Focussing on the two dominant calanoid copepod families Euchaetidae and Aetideidae in Fram Strait, Arctic Ocean, the present study strives to characterize ecological niches of co-occurring species, with regard to vertical distribution, dietary composition as derived from lipid biomarkers, and trophic level on the basis of stable isotope signatures. Closely related species were usually restricted to different depth layers, resulting in a multi-layered vertical distribution pattern. Thus, vertical partitioning was an important mechanism to avoid inter-specific competition. Species occurring in the same depth strata usually belonged to different genera. They differed in fatty acid composition and trophic level, indicating different food preferences. Herbivorous Calanus represent major prey items for many omnivorous and carnivorous species throughout the water column. The seasonal and ontogenetic vertical migration of Calanus acts as a short-cut in food supply for pelagic deep-sea ecosystems in the Arctic.

  11. Impurity-induced divertor plasma oscillations

    NASA Astrophysics Data System (ADS)

    Smirnov, R. D.; Kukushkin, A. S.; Krasheninnikov, S. I.; Pigarov, A. Yu.; Rognlien, T. D.

    2016-01-01

    Two different oscillatory plasma regimes induced by seeding the plasma with high- and low-Z impurities are found for ITER-like divertor plasmas, using computer modeling with the DUSTT/UEDGE and SOLPS4.3 plasma-impurity transport codes. The oscillations are characterized by significant variations of the impurity-radiated power and of the peak heat load on the divertor targets. Qualitative analysis of the divertor plasma oscillations reveals different mechanisms driving the oscillations in the cases of high- and low-Z impurity seeding. The oscillations caused by the high-Z impurities are excited near the X-point by an impurity-related instability of the radiation-condensation type, accompanied by parallel impurity ion transport affected by the thermal and plasma friction forces. The driving mechanism of the oscillations induced by the low-Z impurities is related to the cross-field transport of the impurity atoms, causing alteration between the high and low plasma temperature regimes in the plasma recycling region near the divertor targets. The implications of the impurity-induced plasma oscillations for divertor operation in the next generation tokamaks are also discussed.

  12. Impurity-induced divertor plasma oscillations

    DOE PAGES

    Smirnov, R. D.; Kukushkin, A. S.; Krasheninnikov, S. I.; Pigarov, A. Yu.; Rognlien, T. D.

    2016-01-07

    Two different oscillatory plasma regimes induced by seeding the plasma with high- and low-Z impurities are found for ITER-like divertor plasmas, using computer modeling with the DUSTT/UEDGE and SOLPS4.3 plasma-impurity transport codes. The oscillations are characterized by significant variations of the impurity-radiated power and of the peak heat load on the divertor targets. Qualitative analysis of the divertor plasma oscillations reveals different mechanisms driving the oscillations in the cases of high- and low-Z impurity seeding. The oscillations caused by the high-Z impurities are excited near the X-point by an impurity-related instability of the radiation-condensation type, accompanied by parallel impurity ionmore » transport affected by the thermal and plasma friction forces. The driving mechanism of the oscillations induced by the low-Z impurities is related to the cross-field transport of the impurity atoms, causing alteration between the high and low plasma temperature regimes in the plasma recycling region near the divertor targets. As a result, the implications of the impurity-induced plasma oscillations for divertor operation in the next generation tokamaks are also discussed.« less

  13. Role of sea-level change in deep water deposition along a carbonate shelf margin, Early and Middle Permian, Delaware Basin: implications for reservoir characterization

    NASA Astrophysics Data System (ADS)

    Li, Shunli; Yu, Xinghe; Li, Shengli; Giles, Katherine A.

    2015-04-01

    The architecture and sedimentary characteristics of deep water deposition can reflect influences of sea-level change on depositional processes on the shelf edge, slope, and basin floor. Outcrops of the northern slope and basin floor of the Delaware Basin in west Texas are progressively exposed due to canyon incision and road cutting. The outcrops in the Delaware Basin were measured to characterize gravity flow deposits in deep water of the basin. Subsurface data from the East Ford and Red Tank fields in the central and northeastern Delaware Basin were used to study reservoir architectures and properties. Depositional models of deep water gravity flows at different stages of sea-level change were constructed on the basis of outcrop and subsurface data. In the falling-stage system tracts, sandy debris with collapses of reef carbonates are deposited on the slope, and high-density turbidites on the slope toe and basin floor. In the low-stand system tracts, deep water fans that consist of mixed sand/mud facies on the basin floor are comprised of high- to low-density turbidites. In the transgression and high-stand system tracts, channel-levee systems and elongate lobes of mud-rich calciturbidite deposits formed as a result of sea level rise and scarcity of sandy sediment supply. For the reservoir architecture, the fan-like debris and high-density turbidites show high net-to-gross ratio of 62 %, which indicates the sandiest reservoirs for hydrocarbon accumulation. Lobe-like deep water fans with net-to-gross ratio of 57 % facilitate the formation of high quality sandy reservoirs. The channel-levee systems with muddy calciturbidites have low net-to-gross ratio of 30 %.

  14. The Effect of Hydrogen Annealing on the Impurity Content of Alumina-Forming Alloys

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    2000-01-01

    Previously, the effect of hydrogen annealing on increasing the adhesion of Al2O3 scales had been related to the effective desulfurization that occurred during this process. The simultaneous reduction of other impurities has now been re-examined for up to 20 impurity elements in the case of five different alloys (NiCrAl, FeCrAl, PWA 1480, Rene'142, and Rene'N5). Hydrogen annealing produced measurable reductions in elemental concentration for B, C, Na, Mg, P, K, Sr, or Sn in varying degrees for at least one and up to three of these alloys. No single element was reduced by hydrogen annealing for all the alloys except sulfur. In many cases spalling occurred at low levels of these other impurities, while in other cases the scales were adherent at high levels of the impurities. No impurity besides sulfur was strongly correlated with adhesion.

  15. Anisotropic inflation from vector impurity

    SciTech Connect

    Kanno, Sugumi; Kimura, Masashi; Soda, Jiro; Yokoyama, Shuichiro E-mail: mkimura@sci.osaka-cu.ac.jp E-mail: shu@a.phys.nagoya-u.ac.jp

    2008-08-15

    We study an inflationary scenario with a vector impurity. We show that the universe undergoes anisotropic inflationary expansion due to a preferred direction determined by the vector. Using the slow roll approximation, we find a formula for determining the anisotropy of the inflationary universe. We discuss possible observable predictions of this scenario. In particular, it is stressed that primordial gravitational waves can be induced from curvature perturbations. Hence, even in low scale inflation, a sizable amount of primordial gravitational waves may be produced during inflation.

  16. Impurity-induced moments in underdoped cuprates

    SciTech Connect

    Khaliullin, G. |; Kilian, R.; Krivenko, S.; Fulde, P.

    1997-11-01

    We examine the effect of a nonmagnetic impurity in a two-dimensional spin liquid in the spin-gap phase, employing a drone-fermion representation of spin-1/2 operators. The properties of the local moment induced in the vicinity of the impurity are investigated and an expression for the nuclear-magnetic-resonance Knight shift is derived, which we compare with experimental results. Introducing a second impurity into the spin liquid an antiferromagnetic interaction between the moments is found when the two impurities are located on different sublattices. The presence of many impurities leads to a screening of this interaction as is shown by means of a coherent-potential approximation. Further, the Kondo screening of an impurity-induced local spin by charge carriers is discussed. {copyright} {ital 1997} {ital The American Physical Society}

  17. First-principles electronic structure and formation energies of group V and VII impurities in the α-Fe{sub 2}O{sub 3} alloys

    SciTech Connect

    Xia, Congxin; Jia, Yu; Zhang, Qiming

    2014-09-21

    Based on density functional theory, the electronic structures, formation energy, and transition level of the selected group V and VII impurities in α-Fe{sub 2}O{sub 3} are investigated by means of first-principles methods. Numerical results show that the group V and VII atoms-doped α-Fe{sub 2}O{sub 3} can be energetically favorable under the Fe-rich condition. Group V atom substituting O atom can induce the acceptor impurity level, while the deep donor impurity states are formed inside the band gap when group VII atom substitute O atom in the α-Fe{sub 2}O{sub 3}. Moreover, our results show that halogen atom F substituting O atom should be very easy in the α-Fe{sub 2}O{sub 3}. In addition, our results also show that for both group V and VII atom-doped α-Fe{sub 2}O{sub 3}, the upper sides of valence band are modified obviously, while the conduction band edge does not change.

  18. Trace organic impurities in gaseous helium

    NASA Technical Reports Server (NTRS)

    Schehl, T. A.

    1973-01-01

    A program to determine trace organic impurities present in helium has been initiated. The impurities were concentrated in a cryogenic trap to permit detection and identification by a gas chromatographic-mass spectrometric technique. Gaseous helium (GHe) exhibited 63 GC flame ionization response peaks. Relative GC peak heights and identifications of 25 major impurities by their mass spectra are given. As an aid to further investigation, identities are proposed for 16 other components, and their mass spectra are given.

  19. Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Barbagiovanni, E. G.; Reitano, R.; Franzò, G.; Strano, V.; Terrasi, A.; Mirabella, S.

    2015-12-01

    Visible luminescence from ZnO nanorods (NRs) is attracting large scientific interest for light emission and sensing applications. We study visible luminescent defects in ZnO NRs as a function of post growth thermal treatments, and find four distinct visible deep level defect states (VDLSs): blue (2.52 eV), green (2.23 eV), orange (2.03 eV), and red (1.92 eV). Photoluminescence (PL) studies reveal a distinct modification in the UV (3.25 eV) emission intensity and a shift in the visible spectra after annealing. Annealing at 600 °C in Ar (Ar600) and O2 (O600) causes a blue and red-shift in the visible emission band, respectively. All samples demonstrate orange emission from the core of the NR, with an additional surface related green, blue, and red emission in the As-Prep, Ar600, and O600 samples, respectively. From PL excitation (PLE) measurements we determine the onset energy for population of the various VDLSs, and relate it to the presence of an Urbach tail below the conduction band due to a presence of ionized Zni or Zni complexes. We measured an onset energy of 3.25 eV for the as prepared sample. The onset energy red-shifts in the annealed samples by about 0.05 to 0.1 eV indicating a change in the defect structure, which we relate to the shift in the visible emission. We then used X-ray photoemission spectroscopy (XPS), and elastic recoil detection analysis (ERDA) to understand changes in the surface structure, and H content, respectively. The results of the XPS and ERDA analysis explain how the chemical states are modified due to annealing. We summarize our results by correlating our VDLSs with specific intrinsic defect states to build a model for PL emission in ZnO NRs. These results are important for understanding how to control defect related visible emission for sensing and electroluminescence applications.Visible luminescence from ZnO nanorods (NRs) is attracting large scientific interest for light emission and sensing applications. We study visible

  20. Metal concentrations and metallothionein-like protein levels in deep-sea fishes captured near hydrothermal vents in the Mid-Atlantic Ridge off Azores

    NASA Astrophysics Data System (ADS)

    Company, R.; Felícia, H.; Serafim, A.; Almeida, A. J.; Biscoito, M.; Bebianno, M. J.

    2010-07-01

    The knowledge of metal contamination in deep-sea fishes living in the surroundings of hydrothermal vents is very scarce, along with the detoxification mechanisms that allow them to live near one of the most metal contaminated marine environments. Six deep-sea fish species, although not vent endemic were collected near three Mid-Atlantic Ridge (MAR) hydrothermal vents (Menez Gwen, Lucky Strike and Rainbow) and the gills, muscle and liver were selected for this study due to their importance in metal metabolism and storage. The concentrations of seven metals (Ag, Cd, Cr, Cu, Fe, Mn, and Ni) and a metal-related biomarker (metallothionein-like proteins-MTL) were assessed. Major differences in metal accumulation among fish species are related to their feeding habits and vent site of their capture. The liver and gills are in general the most important tissues for metal accumulation compared to the muscle, but tissue partitioning is very dependent on the fish species considered. Compared to other deep-sea fishes, fish capture in the vicinity of hydrothermal vents accumulates higher amounts of metals in general. However, MTL levels are not considerably different from what is found in commercial coastal fishes, and is poorly correlated with metal concentrations in the tissues. Therefore, MTL may not constitute one major detoxification system for deep-sea species living in the vicinity of three important MAR vent sites.

  1. The Mg impurity in nitride alloys

    SciTech Connect

    Zvanut, M. E.; Willoughby, W. R.; Sunay, U. R.; Koleske, D. D.; Allerman, A. A.; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

    2014-02-21

    Although several magnetic resonance studies address the Mg acceptor in GaN, there are few reports on Mg doping in the alloys, where hole production depends strongly on the Al or In content. Our electron paramagnetic resonance (EPR) measurements of the p-type alloys suggest that the Mg impurity retains the axial symmetry, characteristic of a p-type dopant in both alloys; however, In and Al produce additional, different characteristics of the acceptor. In InGaN, the behavior is consistent with a lowering of the acceptor level and increasing hole density as In concentration increases. For AlGaN, the amount of neutral Mg decreases with increasing Al content, which is attributed to different kinetics of hydrogen diffusion thought to occur in samples with higher Al mole fraction.

  2. Mineral impurities in coal combustion

    SciTech Connect

    Raask, E.

    1985-01-01

    This article discusses the many and varied problems associated with coal combustion and suggests remedial measures to assist in producing electrical energy from coal more efficiently. Contents include: influence of coal mineral matter on boiler design; mineral impurities in coal; quality of coal utilized in power stations; coal grinding, abrasive fuel minerals and plant wear; particulates silicate minerals in boiler flame; reactions of nonsilicate impurities in coal flame; creation, capture and coalescence of particulate ash in boiler flame; slag viscosity; sintering, fusion and slagging propensities of coal ashes, adhesion of ash deposit on boiler tubes and refractory materials; deposition mechanisms, rate measurements and the mode of formation of boiler deposits; thermal radiation and heat transfer properties of boiler deposits; measures to combat boiler fouling and slagging; some specific ash-related problems with US Coals; use of additives in coal fired boilers; high temperature corrosion in coal-fired plants; ash impaction erosion wear; low temeprature fouling and corrosion; comparison of ash-related problems in pulverized fuel and other coal-fired systems.

  3. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    SciTech Connect

    Alnoor, Hatim Chey, Chan Oeurn; Pozina, Galia; Willander, Magnus; Nur, Omer; Liu, Xianjie; Khranovskyy, Volodymyr

    2015-08-15

    Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  4. Late Pleistocene Sea-level and Deep-sea Temperature Changes Constrained by U.S. Mid-Atlantic Margin Sequences

    NASA Astrophysics Data System (ADS)

    Wright, J. D.; Miller, K. G.; Sheridan, R. E.; Cramer, B. S.

    2004-12-01

    We assembled and dated a late Pleistocene (last 130 kyr) sea-level record based on sequence stratigraphy from the U.S. middle Atlantic margin. The timing and magnitude of these sea-level changes are similar to those reported from uplifted coral terraces in New Guinea and Barbados, suggesting that we have established a global record of late Pleistocene sea-level change. Comparison of this eustatic record with benthic foraminiferal oxygen isotope records shows that the deep sea cooled ~2.5\\deg C between Marine Isotope Chrons (MIC) 5e and 5d (~120-110 ka) and that near freezing conditions persisted until Termination 1a (14-15 ka). The pattern of deep-sea cooling follows a hysteresis loop between two stable modes of operation. Cold, near freezing deep-water conditions characterize most of the past 130 kyr. In contrast, two warm intervals (the Holocene/MIC 1 and MIC 5e) resulted from rapid warming during the terminations; rapid cooling followed the peak warmth of 5e and presumably the same would be beginning today if not for anthropogenic warming.

  5. Kinetic effects on geodesic acoustic mode from combined collisions and impurities

    SciTech Connect

    Yang, Shangchuan; Xie, Jinlin Liu, Wandong

    2015-04-15

    The dispersion relation for geodesic acoustic mode (GAM) is derived by applying a gyrokinetic model that accounts for the effects from both collisions and impurities. Based on the dispersion relation, an analysis is performed for the non-monotonic behavior of GAM damping versus the characteristic collision rate at various impurity levels. As the effective charge increases, the maximum damping rate is found to shift towards lower collision rates, nearer to the parameter range of a typical tokamak edge plasma. The relative strengths of ion-ion and impurity-induced collision effects, which are illustrated by numerical calculations, are found to be comparable. Impurity-induced collisions help decrease the frequency of GAM, while their effects on the damping rate are non-monotonic, resulting in a weaker total damping in the high collision regime. The results presented suggest considering collision effects as well as impurity effects in GAM analysis.

  6. Identification, Isolation, and Characterization of a New Degradation Impurity in Nafcillin Sodium

    PubMed Central

    Vundavilli, Jagadeesh Kumar; Kothapalli, Pavan Kumar S. R.; Peruri, Badarinadh Gupta; Korrapati, Prasada Rao V. V.; Sharma, Hemant Kumar; Nallapati, Sreenivas

    2015-01-01

    A new degradant of Nafcillin Sodium was found at a level of 1.8% w/w during the gradient reversed-phase HPLC analysis in stability storage samples. This impurity was identified by LC-MS and was characterized by 1H-NMR, 13C-NMR, LC/MS/MS, elemental analysis, and IR techniques. Based on the structural elucidation data, this impurity was named as N-[(2S)-2-carboxy-2-{[(2-ethoxynaphthalen-1-yl)carbonyl]amino}ethylidene]-3-({N-[(2-ethoxynaphthalen-1-yl)carbonyl]glycyl}sulfanyl)-D-valine. This impurity was prepared by isolation and was co-injected into the HPLC system to confirm the retention time. To the best of our knowledge, this impurity has not been reported elsewhere. The identification and structural elucidation of this degradant impurity has been discussed in detail. PMID:26839804

  7. Screening of a charged impurity in graphene in a magnetic field

    NASA Astrophysics Data System (ADS)

    Sobol, O. O.; Pyatkovskiy, P. K.; Gorbar, E. V.; Gusynin, V. P.

    2016-09-01

    The electron states in the field of a charged impurity in graphene in a magnetic field are studied numerically. It is shown that a charged impurity removes the degeneracy of Landau levels converting them into bandlike structures. As the charge of impurity grows, the repulsion of sublevels of different Landau levels with the same value of orbital momentum takes place leading to the redistribution of the wave function profiles of these sublevels near the impurity. By studying the polarization effects, it is shown in agreement with the recent experiments that the effective charge of impurity can be very effectively tuned by chemical potential. If the chemical potential is situated inside a Landau level, then the charge of impurity is strongly diminished. In addition, the polarization function in this case has a peak at zero momentum, which leads to the sign-changing oscillations of the screened potential as a function of distance. If the chemical potential lies between the Landau levels, then the screened potential does not change sign, the screening is minimal, and the charged impurity can strongly affect the electron spectrum.

  8. Strain-level genomic variation in natural populations of Lebetimonas from an erupting deep-sea volcano.

    PubMed

    Meyer, Julie L; Huber, Julie A

    2014-04-01

    Chemolithoautotrophic Epsilonproteobacteria are ubiquitous in sulfidic, oxygen-poor habitats, including hydrothermal vents, marine oxygen minimum zones, marine sediments and sulfidic caves and have a significant role in cycling carbon, hydrogen, nitrogen and sulfur in these environments. The isolation of diverse strains of Epsilonproteobacteria and the sequencing of their genomes have revealed that this group has the metabolic potential to occupy a wide range of niches, particularly at dynamic deep-sea hydrothermal vents. We expand on this body of work by examining the population genomics of six strains of Lebetimonas, a vent-endemic, thermophilic, hydrogen-oxidizing Epsilonproteobacterium, from a single seamount in the Mariana Arc. Using Lebetimonas as a model for anaerobic, moderately thermophilic organisms in the warm, anoxic subseafloor environment, we show that genomic content is highly conserved and that recombination is limited between closely related strains. The Lebetimonas genomes are shaped by mobile genetic elements and gene loss as well as the acquisition of novel functional genes by horizontal gene transfer, which provide the potential for adaptation and microbial speciation in the deep sea. In addition, these Lebetimonas genomes contain two operons of nitrogenase genes with different evolutionary origins. Lebetimonas expressed nifH during growth with nitrogen gas as the sole nitrogen source, thus providing the first evidence of nitrogen fixation in any Epsilonproteobacteria from deep-sea hydrothermal vents. In this study, we provide a comparative overview of the genomic potential within the Nautiliaceae as well as among more distantly related hydrothermal vent Epsilonproteobacteria to broaden our understanding of microbial adaptation and diversity in the deep sea.

  9. Strain-level genomic variation in natural populations of Lebetimonas from an erupting deep-sea volcano

    PubMed Central

    Meyer, Julie L; Huber, Julie A

    2014-01-01

    Chemolithoautotrophic Epsilonproteobacteria are ubiquitous in sulfidic, oxygen-poor habitats, including hydrothermal vents, marine oxygen minimum zones, marine sediments and sulfidic caves and have a significant role in cycling carbon, hydrogen, nitrogen and sulfur in these environments. The isolation of diverse strains of Epsilonproteobacteria and the sequencing of their genomes have revealed that this group has the metabolic potential to occupy a wide range of niches, particularly at dynamic deep-sea hydrothermal vents. We expand on this body of work by examining the population genomics of six strains of Lebetimonas, a vent-endemic, thermophilic, hydrogen-oxidizing Epsilonproteobacterium, from a single seamount in the Mariana Arc. Using Lebetimonas as a model for anaerobic, moderately thermophilic organisms in the warm, anoxic subseafloor environment, we show that genomic content is highly conserved and that recombination is limited between closely related strains. The Lebetimonas genomes are shaped by mobile genetic elements and gene loss as well as the acquisition of novel functional genes by horizontal gene transfer, which provide the potential for adaptation and microbial speciation in the deep sea. In addition, these Lebetimonas genomes contain two operons of nitrogenase genes with different evolutionary origins. Lebetimonas expressed nifH during growth with nitrogen gas as the sole nitrogen source, thus providing the first evidence of nitrogen fixation in any Epsilonproteobacteria from deep-sea hydrothermal vents. In this study, we provide a comparative overview of the genomic potential within the Nautiliaceae as well as among more distantly related hydrothermal vent Epsilonproteobacteria to broaden our understanding of microbial adaptation and diversity in the deep sea. PMID:24257443

  10. Strain-level genomic variation in natural populations of Lebetimonas from an erupting deep-sea volcano.

    PubMed

    Meyer, Julie L; Huber, Julie A

    2014-04-01

    Chemolithoautotrophic Epsilonproteobacteria are ubiquitous in sulfidic, oxygen-poor habitats, including hydrothermal vents, marine oxygen minimum zones, marine sediments and sulfidic caves and have a significant role in cycling carbon, hydrogen, nitrogen and sulfur in these environments. The isolation of diverse strains of Epsilonproteobacteria and the sequencing of their genomes have revealed that this group has the metabolic potential to occupy a wide range of niches, particularly at dynamic deep-sea hydrothermal vents. We expand on this body of work by examining the population genomics of six strains of Lebetimonas, a vent-endemic, thermophilic, hydrogen-oxidizing Epsilonproteobacterium, from a single seamount in the Mariana Arc. Using Lebetimonas as a model for anaerobic, moderately thermophilic organisms in the warm, anoxic subseafloor environment, we show that genomic content is highly conserved and that recombination is limited between closely related strains. The Lebetimonas genomes are shaped by mobile genetic elements and gene loss as well as the acquisition of novel functional genes by horizontal gene transfer, which provide the potential for adaptation and microbial speciation in the deep sea. In addition, these Lebetimonas genomes contain two operons of nitrogenase genes with different evolutionary origins. Lebetimonas expressed nifH during growth with nitrogen gas as the sole nitrogen source, thus providing the first evidence of nitrogen fixation in any Epsilonproteobacteria from deep-sea hydrothermal vents. In this study, we provide a comparative overview of the genomic potential within the Nautiliaceae as well as among more distantly related hydrothermal vent Epsilonproteobacteria to broaden our understanding of microbial adaptation and diversity in the deep sea. PMID:24257443

  11. Harnessing intrinsic localized modes to identify impurities in nonlinear periodic systems

    NASA Astrophysics Data System (ADS)

    Thota, M.; Harne, R. L.; Wang, K. W.

    2015-02-01

    Intrinsic localized modes (ILMs) are concentrations of vibrational energy in periodic systems/lattices due to the combined influences of nonlinearity and discreteness. Moreover, ILMs can move within the system and may strongly interact with an impurity, such as a stiffness change, mass variation, etc. Numerous scientific fields have uncovered examples and evidence of ILMs, motivating a multidisciplinary pursuit to rigorously understand the underlying principles. In spite of the diverse technical studies, a characterization of ILM interaction behaviors with multiple impurities in dissipative lattices remains outstanding. The insights on such behaviors may be broadly useful when dynamic measurements are the only accessible features of the periodic system. For instance, one may guide an ILM within the lattice using a deliberately applied and steered impurity and harness the observed interaction behaviors with a second, static (immovable) impurity/defect to identify how the underlying lattice is different at the second, defected site, whether or not one knew the position of the defect a priori. In this spirit, this research studies, analyzes, and characterizes the interaction types amongst an ILM and multiple impurities, and devises a method to identify a static defect impurity using quantitatively and qualitatively distinct interaction phenomena. The method is found to be robust to moderate levels of lattice stiffness heterogeneity and is applicable to monitor various property changes that represent impurities. Finally, experimental studies verify that ILMs interact with multiple impurities in unique ways such that defect features may be effectively identified.

  12. Identification of unknown impurities in simvastatin substance and tablets by liquid chromatography/tandem mass spectrometry.

    PubMed

    Vuletić, Marko; Cindrić, Mario; Koruznjak, Jasna Dogan

    2005-04-01

    Unknown impurities were detected in simvastatin substance and tablets at a 0.2% level using the liquid chromatography technique with UV (DAD) detection. The impurity structures were elucidated by a direct hyphenation of liquid chromatograph to high-resolution mass spectrometer with electrospray ionisation interface using solutions of formic acid in water and in acetonitrile as the mobile phase. Peak tracking was performed using the column-switching technique. Accurate mass measurements by quadrupole time-of-flight mass spectrometer equipped with lock-spray provided information about elemental composition of intact molecules and fragments of impurities. Measurement accuracy for precursor ions was around 3 ppm and for fragment ions between 4 and 13 ppm. Mass resolving power was around 6500. Deduced molecular formulae for A1, A2 and A3 impurities were C(27)H(44)O(6), C(26)H(43)O(6) and C(26)H(41)O(5), respectively. The structures proposed for all three impurities revealed modifications of simvastatin molecule on the lactone ring. Impurity A1, detected in simvastatin tablets, was identified as ethyl ester, while the impurities A2 and A3, detected in simvastatin substance, were identified as methyl ester and methyl ether of simvastatin. The impurity from tablets was synthesized and its structure confirmed by LC-UV, LC-MS/MS, and NMR techniques.

  13. Operation of the Oxide Washer for Water-Washing Solubles out of Impure Pu Oxide

    SciTech Connect

    Dodson, K E; Close, W L; Krikorian, O H; Summers III, H V

    2006-01-30

    An evaluation has been made for using the Oxide Washer to wash water-soluble materials out of impure Pu oxide. It is found that multiple washes are needed to reduce the water-soluble materials to very low levels in the impure Pu oxides. The removal of the wash water from the Oxide Washer is accompanied by particulates of the impure Pu oxide, which subsequently need to be filtered out. In spite of the additional filtration needed, the overall level of manpower required for processing is still only about one third of that for an all-manual operation.

  14. Characterization of ZnO/CdS/CuInSe 2 Thin-Film Solar Cells by Deep-Level Transient Spectroscopy

    NASA Astrophysics Data System (ADS)

    Kuranouchi, Shin'ichi; Konagai, Makoto

    1995-05-01

    Trap energy levels in CuInSe2 (CIS) films have been measured by means of deep-level transient spectroscopy (DLTS). ZnO/CdS/CIS solar cells with conversion efficiencies of 5 11% were used as samples. Hole traps were detected for all samples measured in this study. Activation energy of traps in each sample was estimated to be in the range from 78 to 226 meV, which is shallower than any other reported values. Characteristics of the trap were thought to depend on the fabrication process of CIS films.

  15. Deep levels in a-plane, high Mg-content Mg{sub x}Zn{sub 1-x}O epitaxial layers grown by molecular beam epitaxy

    SciTech Connect

    Guer, Emre; Tabares, G.; Hierro, A.; Chauveau, J. M.

    2012-12-15

    Deep level defects in n-type unintentionally doped a-plane Mg{sub x}Zn{sub 1-x}O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg{sub x}Zn{sub 1-x}O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E{sub c} - 1.4 eV, 2.1 eV, 2.6 V, and E{sub v} + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E{sub c} - 2.1 eV, E{sub v} + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E{sub v} + 0.3 eV and E{sub c} - 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E{sub v} + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E{sub c} - 1.4 eV and E{sub c} - 2.6 eV levels in Mg alloyed samples.

  16. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    SciTech Connect

    Zhang, Z.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

    2015-01-12

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 10{sup 13 }cm{sup −2} and 3 × 10{sup 13 }cm{sup −2} fluences not only introduces a trap with an E{sub V} + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at E{sub V} + 0.48 eV, E{sub V} + 2.42 eV, E{sub V} + 3.00 eV, and E{sub V} + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  17. Determining factors for the presence of impurities in selectively collected biowaste.

    PubMed

    Puig-Ventosa, Ignasi; Freire-González, Jaume; Jofra-Sora, Marta

    2013-05-01

    The presence of impurities in biodegradable waste (biowaste) causes problems with the management of waste, among which are additional costs derived from the need to improve pre-treatment of biowaste, loss of treatment capacity and the difficulty selling treated biowaste as compost owing to its low quality. When treated biowaste is used for soil conditioning it can also cause soil pollution. Understanding the reasons why impurities are in biowaste and the factors affecting the percentage of impurities present can be used to determine ways to minimise these negative effects. This article attempts to identify the main causes for the presence of impurities in biowaste. In order to do so, it carries out an empirical analysis of the level of impurities in biowaste from municipal waste collection in two steps. First, a bivariate analysis focuses on significant correlations between the presence of impurities and several variables. Second, the construction of an explanatory model based on the significant relations obtained in the first step, and on literature research, are used to check the stated hypothesis. The estimates demonstrate that the collection system, the global levels of separate collection, the urban density of the municipality and the requirement to use compostable bags may be the main drivers of impurity levels in biowaste. PMID:23524997

  18. Eliminating Impurity Traps in the Silane Process

    NASA Technical Reports Server (NTRS)

    Coleman, L. M.

    1982-01-01

    Redistribution reaction section of silane process progressively separates heavier parts of chlorosilane feedstock until light silane product is available for pyrolysis. Small amount of liquid containing impurities is withdrawn from processing stages in which trapping occurs and passed to earlier processing stage in which impurities tend to be removed via chemical reactions.

  19. Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

    NASA Astrophysics Data System (ADS)

    Omotoso, Ezekiel; Meyer, Walter E.; Auret, F. Danie; Paradzah, Alexander T.; Legodi, Matshisa J.

    2016-03-01

    Deep-level transient spectroscopy (DLTS) and Laplace-DLTS were used to investigate the effect of alpha-particle irradiation on the electrical properties of nitrogen-doped 4H-SiC. The samples were bombarded with alpha-particles at room temperature (300 K) using an americium-241 (241Am) radionuclide source. DLTS revealed the presence of four deep levels in the as-grown samples, E0.09, E0.11, E0.16 and E0.65. After irradiation with a fluence of 4.1 × 1010 alpha-particles-cm-2, DLTS measurements indicated the presence of two new deep levels, E0.39 and E0.62 with energy levels, EC - 0.39 eV and EC - 0.62 eV, with an apparent capture cross sections of 2 × 10-16 and 2 × 10-14 cm2, respectively. Furthermore, irradiation with fluence of 8.9 × 1010 alpha-particles-cm-2 resulted in the disappearance of shallow defects due to a lowering of the Fermi level. These defects re-appeared after annealing at 300 °C for 20 min. Defects, E0.39 and E0.42 with close emission rates were attributed to silicon or carbon vacancy and could only be separated by using high resolution Laplace-DLTS. The DLTS peaks at EC - (0.55-0.70) eV (known as Z1/Z2) were attributed to an isolated carbon vacancy (VC).

  20. Substitutional 4d and 5d impurities in graphene.

    PubMed

    Alonso-Lanza, Tomás; Ayuela, Andrés; Aguilera-Granja, Faustino

    2016-08-21

    We describe the structural and electronic properties of graphene doped with substitutional impurities of 4d and 5d transition metals. The adsorption energies and distances for 4d and 5d metals in graphene show similar trends for the later groups in the periodic table, which are also well-known characteristics of 3d elements. However, along earlier groups the 4d impurities in graphene show very similar adsorption energies, distances and magnetic moments to the 5d ones, which can be related to the influence of the 4d and 5d lanthanide contraction. Surprisingly, within the manganese group, the total magnetic moment of 3 μB for manganese is reduced to 1 μB for technetium and rhenium. We find that compared with 3d elements, the larger size of the 4d and 5d elements causes a high degree of hybridization with the neighbouring carbon atoms, reducing spin splitting in the d levels. It seems that the magnetic adjustment of graphene could be significantly different if 4d or 5d impurities are used instead of 3d impurities.

  1. Substitutional 4d and 5d impurities in graphene.

    PubMed

    Alonso-Lanza, Tomás; Ayuela, Andrés; Aguilera-Granja, Faustino

    2016-08-21

    We describe the structural and electronic properties of graphene doped with substitutional impurities of 4d and 5d transition metals. The adsorption energies and distances for 4d and 5d metals in graphene show similar trends for the later groups in the periodic table, which are also well-known characteristics of 3d elements. However, along earlier groups the 4d impurities in graphene show very similar adsorption energies, distances and magnetic moments to the 5d ones, which can be related to the influence of the 4d and 5d lanthanide contraction. Surprisingly, within the manganese group, the total magnetic moment of 3 μB for manganese is reduced to 1 μB for technetium and rhenium. We find that compared with 3d elements, the larger size of the 4d and 5d elements causes a high degree of hybridization with the neighbouring carbon atoms, reducing spin splitting in the d levels. It seems that the magnetic adjustment of graphene could be significantly different if 4d or 5d impurities are used instead of 3d impurities. PMID:27439363

  2. Impurity accumulation in plasma regimes with high energy confinement

    NASA Astrophysics Data System (ADS)

    Ran, L. B.; Roberts, D. E.; Yang, H. R.; Dodel, G.; Gentle, K.; Von Goeler, S.; Holzhauer, E.; Hübner, K.; Keilhacker, M.; Korotkov, A.; Luce, T. C.; Miura, Y.; Tsois, N.; Würz, H.; Fussmann, G.; Hofmann, J.; Janeschitz, G.; Krieger, K.; Müller, E. R.; Nolte, R.; Röhr, H.; Steuer, K. H.; Becker, G.; Bomba, B.; Bruhns, H.; Büchl, K.; Carlson, A.; Eberhagen, A.; Fahrbach, H.-U.; Gehre, O.; Gernhardt, J.; Giannone, L.; Von Gierke, G.; Glock, E.; Gruber, O.; Haas, G.; Herrmann, H.; Kaesdorf, S.; Karger, F.; Kaufmann, M.; Klüber, O.; Kornherr, M.; Lackner, K.; Lang, R.; Lee, P.; Lisitano, G.; Mast, F.; Mayer, H. M.; McCormick, K.; Meisel, D.; Mertens, V.; Murmann, H.; Neuhauser, J.; Niedermeyer, H.; Noterdaeme, J. M.; Poschenrieder, W.; Preis, R.; Rapp, H.; Rudyj, A.; Sandmann, W.; Schneider, F.; Schnider, U.; Siller, G.; Simmet, E.; Speth, E.; Söldner, F.; Stäbler, A.; Steinmetz, K.; Stroth, U.; Vollmer, O.; Zasche, D.

    1989-04-01

    Investigations of impurity accumulation phenomena in ASDEX are reviewed. There are four different operating regimes where pronounced accumulation is observed and these regimes are also characterized by improved energy confinement. In particular, medium-Z metallic ions are involved in accumulation processes whereas low-Z ions appear almost unaffected. The rapid accumulation observed in the case of metallic ions may be explained by neoclassical inward drifts if we assume that the anomalous diffusion is sufficiently suppressed, some indication of this being found from laser blow-off studies. The present results, however, can only be partly explained by neoclassical theory, according to which accumulation of low-Z impurities should also occur. The temporal behaviour of accumulation and the retarding effect of proton dilution for collision dominated transport are also discussed. Finally, we conclude that the full benefits of improved energy confinement can be achieved only if the impurity influxes are kept to a sufficiently low level. Expressed in terms of concentrations under low confinement conditions we have to postulate, for ASDEX, concentrations ≲ 10 -4 for metals and ≲ 2% for all light impurities.

  3. Controlled samples for silicon defect and impurity studies

    SciTech Connect

    Ciszek, T.F.

    1995-08-01

    Because of the diverse defects and impurities that are present in any given sample of silicon material, it can be extremely difficult to conduct a controlled experiment to study the influence of any particular defect or impurity on photovoltaic properties such as minority charge carrier lifetime {tau} or solar cell efficiency q. For example, the influence of iron may be different if boron is present, or the influence of silicon self interstitial clusters may be different if oxygen is present. It thus becomes important to conduct such studies on controlled samples where the influence of secondary effects is minimized. At NREL, over the past several years, we have focused on using the high-purity float-zone (FZ) growth method to obtain controlled samples. Because the silicon melt is not in contact with a container, and no heated components are in the growth region, very high purities and low defect levels can be achieved in baseline material. The baseline can be controllably perturbed by introduction of specific defects or impurities. The chart shown below lists some of the types of defect and impurity. combinations that can be studied in this way. The boxes marked with an {open_quotes}x{close_quotes} represent combinations we have studied to some extent.

  4. Analytical control of process impurities in Pazopanib hydrochloride by impurity fate mapping.

    PubMed

    Li, Yan; Liu, David Q; Yang, Shawn; Sudini, Ravinder; McGuire, Michael A; Bhanushali, Dharmesh S; Kord, Alireza S

    2010-08-01

    Understanding the origin and fate of organic impurities within the manufacturing process along with a good control strategy is an integral part of the quality control of drug substance. Following the underlying principles of quality by design (QbD), a systematic approach to analytical control of process impurities by impurity fate mapping (IFM) has been developed and applied to the investigation and control of impurities in the manufacturing process of Pazopanib hydrochloride, an anticancer drug approved recently by the U.S. FDA. This approach requires an aggressive chemical and analytical search for potential impurities in the starting materials, intermediates and drug substance, and experimental studies to track their fate through the manufacturing process in order to understand the process capability for rejecting such impurities. Comprehensive IFM can provide elements of control strategies for impurities. This paper highlights the critical roles that analytical sciences play in the IFM process and impurity control. The application of various analytical techniques (HPLC, LC-MS, NMR, etc.) and development of sensitive and selective methods for impurity detection, identification, separation and quantification are highlighted with illustrative examples. As an essential part of the entire control strategy for Pazopanib hydrochloride, analytical control of impurities with 'meaningful' specifications and the 'right' analytical methods is addressed. In particular, IFM provides scientific justification that can allow for control of process impurities up-stream at the starting materials or intermediates whenever possible.

  5. Deep vein thrombosis is accurately predicted by comprehensive analysis of the levels of microRNA-96 and plasma D-dimer

    PubMed Central

    Xie, Xuesheng; Liu, Changpeng; Lin, Wei; Zhan, Baoming; Dong, Changjun; Song, Zhen; Wang, Shilei; Qi, Yingguo; Wang, Jiali; Gu, Zengquan

    2016-01-01

    The aim of the present study was to investigate the association between platelet microRNA-96 (miR-96) expression levels and the occurrence of deep vein thrombosis (DVT) in orthopedic patients. A total of consecutive 69 orthopedic patients with DVT and 30 healthy individuals were enrolled. Ultrasonic color Doppler imaging was performed on lower limb veins after orthopedic surgery to determine the occurrence of DVT. An enzyme-linked fluorescent assay was performed to detect the levels of D-dimer in plasma. A quantitative polymerase chain reaction assay was performed to determine the expression levels of miR-96. Expression levels of platelet miR-96 were significantly increased in orthopedic patients after orthopedic surgery. miR-96 expression levels in orthopedic patients with DVT at days 1, 3 and 7 after orthopedic surgery were significantly increased when compared with those in the control group. The increased miR-96 expression levels were correlated with plasma D-dimer levels in orthopedic patients with DVT. However, for the orthopedic patients in the non-DVT group following surgery, miR-96 expression levels were correlated with plasma D-dimer levels. In summary, the present results suggest that the expression levels of miR-96 may be associated with the occurrence of DVT. The occurrence of DVT may be accurately predicted by comprehensive analysis of the levels of miR-96 and plasma D-dimer. PMID:27588107

  6. Defect properties of Sb- and Bi-doped CuInSe{sub 2}: The effect of the deep lone-pair s states

    SciTech Connect

    Park, Ji-Sang; Yang, Ji-Hui; Ramanathan, Kannan; Wei, Su-Huai

    2014-12-15

    Bi or Sb doping has been used to make better material properties of polycrystalline Cu{sub 2}(In,Ga)Se{sub 2} as solar cell absorbers, including the experimentally observed improved electrical properties. However, the mechanism is still not clear. Using first-principles method, we investigate the stability and electronic structure of Bi- and Sb-related defects in CuInSe{sub 2} and study their effects on the doping efficiency. Contrary to previous thinking that Bi or Sb substituted on the anion site, we find that under anion-rich conditions, the impurities can substitute on cation sites and are isovalent to In because of the formation of the impurity lone pair s states. When the impurities substitute for Cu, the defects act as shallow double donors and help remove the deep In{sub Cu} level, thus resulting in the improved carrier life time. On the other hand, under anion-poor conditions, impurities at the Se site create amphoteric deep levels that are detrimental to the device performance.

  7. EFFECT OF IMPURITIES ON THE PERFORMANCE OF A Pd-Ag DIFFUSER

    SciTech Connect

    Morgan, G.

    2010-12-16

    A commercially fabricated diffuser purchased from Johnson-Matthey, Inc. was evaluated for performance characterization testing at the Savannah River National Laboratory (SRNL). Different impurities are often present in the feed streams of the process diffusers, but the effect of these impurities on the diffuser performance is currently unknown. Various impurities were introduced into the feed stream of the diffuser at various levels ranging from 0.5% to 10% of the total flow in order to determine the effect that these impurities have on the permeation of hydrogen through the palladium-silver membrane. The introduction of various impurities into the feed stream of the diffuser had a minimal effect on the overall permeation of hydrogen through the Pd-Ag membrane. Of the four impurities introduced into the feed stream, carbon monoxide (CO) was the only impurity that showed any evidence of causing a reduction in the amount of hydrogen permeating through the Pd-Ag membrane. The hydrogen permeation returned to its baseline level after the CO was removed from the feed stream. There were no lasting effects of the CO exposure on the ability of the membrane to effectively separate hydrogen from the non-hydrogen species in the gas stream under the conditions tested.

  8. Tunneling spectroscopy of a phosphorus impurity atom on the Ge(111)-(2 × 1) surface

    SciTech Connect

    Savinov, S. V.; Oreshkin, A. I. E-mail: oreshkin@spmlab.ru; Oreshkin, S. I.; Haesendonck, C. van

    2015-06-15

    We numerically model the Ge(111)-(2 × 1) surface electronic properties in the vicinity of a P donor impurity atom located near the surface. We find a notable increase in the surface local density of states (LDOS) around the surface dopant near the bottom of the empty surface state band π*, which we call a split state due to its limited spatial extent and energetic position inside the band gap. We show that despite the well-established bulk donor impurity energy level position at the very bottom of the conduction band, a surface donor impurity on the Ge(111)-(2 × 1) surface might produce an energy level below the Fermi energy, depending on the impurity atom local environment. It is demonstrated that the impurity located in subsurface atomic layers is visible in a scanning tunneling microscope (STM) experiment on the Ge(111)-(2 × 1) surface. The quasi-1D character of the impurity image, observed in STM experiments, is confirmed by our computer simulations with a note that a few π-bonded dimer rows may be affected by the presence of the impurity atom. We elaborate a model that allows classifying atoms on the experimental low-temperature STM image. We show the presence of spatial oscillations of the LDOS by the density-functional theory method.

  9. Physical activity levels and perceived benefits and barriers to physical activity in HIV-infected women living in the deep south of the United States.

    PubMed

    Rehm, Kristina E; Konkle-Parker, Deborah

    2016-09-01

    Engaging in regular physical activity (PA) is important in maintaining health and increasing the overall quality of life of people living with HIV (PLWH). The deep south of the USA is known for its high rate of sedentary behavior although data on the activity levels and perceptions of the benefits and barriers to exercise in women living with HIV in the deep south are lacking. Understanding the perceived benefits and barriers to exercise can guide the development of PA interventions. We conducted a cross-sectional study to determine the PA levels and perceived benefits and barriers to exercise associated with both age and depression level in a group of HIV+ women living in the deep south. We recruited a total of 50 participants from a cohort site for the Women's Interagency HIV Study. Depression was assessed using the Center for Epidemiological Studies Depression Scale (CES-D) and benefits/barriers to exercise were measured using the Exercise Benefits and Barriers Scale (EBBS). We measured PA both subjectively and objectively using the International Physical Activity Questionnaire (IPAQ) and a Fitbit PA monitor, respectively. Our sample was predominantly African-American (96%) and the mean ±SD age, body mass index, and CES-D score were 42 ± 8.8 years, 36.6 ± 11.5 kg/m(2), and 15.6 ± 11.4, respectively. Both subjective and objective measures of PA indicated that our participants were sedentary. The greatest perceived benefit to exercise was physical performance and the greatest barrier to exercise was physical exertion. Higher overall perceived benefits were reported by women ≥43 years and women reporting higher levels of depression. There was no difference in overall barriers associated with age and depression level, but women with depression felt more fatigued by exercise. The results of this study can be helpful when designing and implementing PA interventions in women living with HIV in the deep south. PMID:27023306

  10. Local Density of States for Single Impurity in Graphene

    NASA Astrophysics Data System (ADS)

    Yang, Ling

    2011-12-01

    Graphene consists of an atom-thick layer of carbon atoms arranged in a honeycomb lattice, and its low-energy electronic excitations are well described as massless Dirac fermions with spin half and an additional pseudospin degree of freedom. Impurities in graphene can have a significant effect on the local electronic structure of graphene when the Fermi level is near the Dirac point. We study the local electronic spectra and real-space and k-space local density of state (LDOS) maps of graphene with different impurities (diagonal and non-diagonal impurity potential) such as vacancies, substitutional impurities, and adatoms. In the presence of a perpendicular magnetic field, we use a linearization approximation for the energy dispersion and employ a T-matrix formalism to calculate the Green's function. We investigate the effect of an external magnetic field on the Friedel oscillations and impurity-induced resonant states. Using a multimode description for an scanning tunneling microscope (STM) tip, we calculate STM currents for the substitutional and vacancies case and find that strong resonances in the LDOS at finite energies lead to the presence of steps in the STM current and suppression of the Fano factor. We also describe in detail the theory of scanning tunneling spectroscopy in graphene in the presence of adatoms, magnetic or not, with localized orbitals of arbitrary symmetry, corresponding to any given angular momentum state.We show that quantum interference effects which are naturally inbuilt in the honeycomb lattice, in combination with the orbital symmetry of the localized state, allow scanning tunneling probes to characterize adatoms and defects in graphene.

  11. Segregation Coefficients of Impurities in Selenium by Zone Refining

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1998-01-01

    The purification of Se by zone refining process was studied. The impurity solute levels along the length of a zone-refined Se sample were measured by spark source mass spectrographic analysis. By comparing the experimental concentration levels with theoretical curves the segregation coefficient, defined as the ratio of equilibrium concentration of a given solute in the solid to that in the liquid, k = x(sub s)/x(sub l) for most of the impurities in Se are found to be close to unity, i.e., between 0.85 and 1.15, with the k value for Si, Zn, Fe, Na and Al greater than 1 and that for S, Cl, Ca, P, As, Mn and Cr less than 1. This implies that a large number of passes is needed for the successful implementation of zone refining in the purification of Se.

  12. Method and apparatus for detecting and measuring trace impurities in flowing gases

    DOEpatents

    Taylor, Gene W.; Dowdy, Edward J.

    1979-01-01

    Trace impurities in flowing gases may be detected and measured by a dynamic atomic molecular emission spectrograph utilizing as its energy source the energy transfer reactions of metastable species, atomic or molecular, with the impurities in the flowing gas. An electronically metastable species which maintains a stable afterglow is formed and mixed with the flowing gas in a region downstream from and separate from the region in which the metastable species is formed. Impurity levels are determined quantitatively by the measurement of line and/or band intensity as a function of concentration employing emission spectroscopic techniques.

  13. The beauty of impurities: Two revivals of Friedel's virtual bound-state concept

    NASA Astrophysics Data System (ADS)

    Georges, Antoine

    2016-03-01

    Jacques Friedel pioneered the theoretical study of impurities and magnetic impurities in metals. He discovered Friedel oscillations, introduced the concept of virtual bound-state, and demonstrated that the charge on the impurity is related to the scattering phase-shift at the Fermi level (Friedel sum-rule). After a brief review of some of these concepts, I describe how they proved useful in two new contexts. The first one concerns the Coulomb blockade in quantum dots, and its suppression by the Kondo effect. The second one is the dynamical mean-field theory of strong electronic correlations. xml:lang="fr"

  14. Paramagnetic Attraction of Impurity-Helium Solids

    NASA Technical Reports Server (NTRS)

    Bernard, E. P.; Boltnev, R. E.; Khmelenko, V. V.; Lee, D. M.

    2003-01-01

    Impurity-helium solids are formed when a mixture of impurity and helium gases enters a volume of superfluid helium. Typical choices of impurity gas are hydrogen deuteride, deuterium, nitrogen, neon and argon, or a mixture of these. These solids consist of individual impurity atoms and molecules as well as clusters of impurity atoms and molecules covered with layers of solidified helium. The clusters have an imperfect crystalline structure and diameters ranging up to 90 angstroms, depending somewhat on the choice of impurity. Immediately following formation the clusters aggregate into loosely connected porous solids that are submerged in and completely permeated by the liquid helium. Im-He solids are extremely effective at stabilizing high concentrations of free radicals, which can be introduced by applying a high power RF dis- charge to the impurity gas mixture just before it strikes the super fluid helium. Average concentrations of 10(exp 19) nitrogen atoms/cc and 5 x 10(exp 18) deuterium atoms/cc can be achieved this way. It shows a typical sample formed from a mixture of atomic and molecular hydrogen and deuterium. It shows typical sample formed from atomic and molecular nitrogen. Much of the stability of Im-He solids is attributed to their very large surface area to volume ratio and their permeation by super fluid helium. Heat resulting from a chance meeting and recombination of free radicals is quickly dissipated by the super fluid helium instead of thermally promoting the diffusion of other nearby free radicals.

  15. Elemental impurity analysis of mercuric iodide by ICP/MS

    SciTech Connect

    Cross, E.S. . Santa Barbara Operations); Mroz, E.; Olivares, J.A. )

    1993-01-01

    A method has been developed to analyze mercuric iodide (HgI[sub 2]) for elemental contamination using Inductively Coupled Plasma/Mass Spectroscopy (ICP/MS). This paper will discuss the ICP/MS method, the effectiveness of purification schemes for removing impurities from HgI[sub 2], as well as preliminary correlations between HgI[sub 2] detector performance and elemental contamination levels.

  16. Oxidation-Induced Deep Levels in n - and p -Type 4 H - and 6 H -SiC and Their Influence on Carrier Lifetime

    NASA Astrophysics Data System (ADS)

    Booker, I. D.; Abdalla, H.; Hassan, J.; Karhu, R.; Lilja, L.; Janzén, E.; Sveinbjörnsson, E. Ö.

    2016-07-01

    We present a complete analysis of the electron- and hole-capture and -emission processes of the deep levels ON1, ON2a, and ON2b in 4 H -SiC and their 6 H -SiC counterparts OS1a and OS1b through OS3a and OS3b, which are produced by lifetime enhancement oxidation or implantation and annealing techniques. The modeling is based on a simultaneous numerical fitting of multiple high-resolution capacitance deep-level transient spectroscopy spectra measured with different filling-pulse lengths in n - and p -type material. All defects are found to be double-donor-type positive-U two-level defects with very small hole-capture cross sections, making them recombination centers of low efficiency, in accordance with minority-carrier-lifetime measurements. Their behavior as trapping and weak recombination centers, their large concentrations resulting from the lifetime enhancement oxidations, and their high thermal stability, however, make it advisable to minimize their presence in active regions of devices, for example, the base layer of bipolar junction transistors.

  17. An introduction to blocked impurity band detectors

    NASA Technical Reports Server (NTRS)

    Geist, Jon

    1988-01-01

    Blocked impurity band detectors fabricated using standard silicon technologies offer the possibility of combining high sensitivity and high accuracy in a single detector operating in a low background environment. The solid state photomultiplier described by Petroff et al., which is a new type of blocked impurity band detector, offers even higher sensitivity as well as operation in the visible spectral region. The principle of operation and possible application of blocked impurity band detectors for stellar seismology and the search for extra-solar planets are described.

  18. Multiple magnetic impurities on surfaces: Scattering and quasiparticle interference

    NASA Astrophysics Data System (ADS)

    Mitchell, Andrew K.; Derry, Philip G.; Logan, David E.

    2015-06-01

    We study systems of multiple interacting quantum impurities deposited on a metallic surface in a three-dimensional host. For the real-space two-impurity problem, using numerical renormalization group calculations, a rich range of behavior is shown to arise due to the interplay between Kondo physics and effective Ruderman-Kittel-Kasuya-Yosida interactions—provided the impurity separation is small. Such calculations allow identification of the minimum impurity separation required for a description in terms of independent impurities, and thereby the onset of the "dilute-impurity limit" in many-impurity systems. A "dilute-cluster" limit is also identified in systems with higher impurity density, where interimpurity interactions are important only within independent clusters. We calculate the quasiparticle interference due to two and many impurities, and explore the consequences of the independent impurity and cluster paradigms. Our results provide a framework to investigate the effects of disorder due to interacting impurities at experimentally relevant surface coverages.

  19. A Rydberg impurity in a dense background gas (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Liebisch, Tara; Schlagmüller, Michael; Engel, Felix; Westphal, Karl; Kleinbach, Kathrin; Böttcher, Fabian; Loew, Robert; Hofferberth, Sebastian; Pfau, Tilman; Perez-Rios, Jesus; Greene, Chris

    2016-04-01

    A single Rydberg atom impurity excited in a BEC is a system that can be utilized to measure the quantum mechanical properties of electron - neutral scattering andthe electron probability density of a Rydberg atom. The Rydberg electron - neutral atom scattering process, is a fundamental scattering process, which can be described via Fermi's pseudopotential as V{ěc{r},ěc{R} )=2pi {a}[k(R)]&delta^{(3)}(ěc{r}-ěc{R}). The scattering length is dependent on the momentum of the Rydberg electron, and therefore is dependent on the separation of the Rydberg electron from the ion core. At the classical outermost turning point of the electron, it has the slowest momentum leading to s-wave dominated scattering potentials 10's of MHz in depth for n<40 (Greene et al. PRL 85 2458 (2000), Bendkowsky et al. PRL 105 163201 (2010)). In alkali atoms there is a shape resonance for p-wave scattering, which becomes relevant at ion-neutral separations of 75nm (I.I. Fabrikant J.Phys B 19, 1527 (1985)). This shape resonance potential is several GHz deep, spanning the energy level spacing between n and n-1 principal quantum numbers. At high BEC densities of 5x10^14cm-3 the nearest neighbor spacing is less than 70nm. A Rydberg atom excited within a BEC, is an excitation of the Rydberg atom and all N neutral atoms located within the Rydberg orbit, described as nS+N x 5S. The nS+N x 5S state is density shifted from the Rydberg resonance. Not only does the distribution of atoms within the Rydberg orbit lead to a density shift, but, at these high densities, atoms excited in the nS+N x 5S state near the shape resonance potential cause large perturbations to the density shift, leading to a line broadening. Therefore the spectroscopic line shape of a Rydberg atom in a BEC allows us to probe the theoretically calculated p-wave shape resonance potential. Furthermore, we can observe and measure the dynamics of neutrals excited in the nS+N x 5S state. In the ultracold regime of a BEC, the background

  20. Continuous administration of heparin in patients with deep vein thrombosis can increase plasma levels of diamine oxidase.

    PubMed

    Klocker, Josef; Perkmann, Reinhold; Klein-Weigel, Peter; Mörsdorf, Gabriele; Drasche, Astrid; Klingler, Anton; Fraedrich, Gustav; Schwelberger, Hubert G

    2004-01-01

    Besides its anticoagulant activity, the sulfated polysaccharide heparin has numerous other biological effects. Especially the antiinflammatory and immunoregulatory properties of heparin may be associated with its ability to release the histamine-degrading enzyme diamine oxidase (DAO) from tissue-bound sites into the circulation. Whereas DAO activity is at the limits of detection in normal human plasma, the application of heparin leads to a significant increase of plasma DAO activity. However, previously, only the effect of bolus injection of unfractionated heparin (UFH) had been studied. To investigate DAO release during continuous heparin infusion, 28 patients with deep vein thrombosis (DVT) undergoing heparin therapy were analyzed. Whereas continuous heparin infusion did not lead to any increase of plasma DAO activity in 12 patients (43%), 6 patients (21%) showed a single elevated and 10 patients (36%) permanently elevated plasma DAO activity. The groups of patients exhibiting different DAO release responses did not differ in age, sex, body weight, concomitant diseases, heparin infusion rates, coagulation indices, location and extension of thrombosis, or clinical outcome. However, the rate of idiopathic DVT was significantly higher in the group of patients releasing DAO. This study shows, for the first time, that continuous heparin infusion can lead to DAO release and that individuals exhibit considerable differences in their release response. Although the significance of heparin-induced DAO release needs further clarification, our results indicate that postheparin plasma DAO activity could be an interesting parameter correlated with idiopathic DVT.

  1. Identification of anthropogenic and natural dust sources using Moderate Resolution Imaging Spectroradiometer (MODIS) Deep Blue level 2 data

    NASA Astrophysics Data System (ADS)

    Ginoux, Paul; Garbuzov, Dmitri; Hsu, N. Christina

    2010-03-01

    Mineral dust interacts with radiation and impacts both the regional and global climate. The relative contribution of natural and anthropogenic dust sources, however, remains largely uncertain. Although human activities disturb soils and therefore enhance wind erosion, their contribution to global dust emission has never been directly evaluated because of a lack of data. The retrieval of aerosol properties over land, including deserts, using the Moderate Resolution Imaging Spectroradiometer Deep Blue algorithm makes the first direct characterization of the origin of individual sources possible. In order to separate freshly emitted dust from other aerosol types and aged dust particles, the spectral dependence of the single scattering albedo and the Angstrom wavelength exponent are used. Four years of data from the eastern part of West Africa, which includes one of the most active natural dust sources and the highest population density on the continent, are processed. Sources are identified on the basis of the persistence of significant aerosol optical depth from freshly emitted dust, and the origin is characterized as natural or anthropogenic on the basis of a land use data set. Our results indicate that although anthropogenic dust is observed less frequently and with lower optical depth than dust from natural sources in this particular region, it occupies a large area covering most of northern Nigeria and southern Chad, around Lake Chad. In addition, smaller anthropogenic sources are found as far south as 5° of latitude north, well outside the domain of most dust source inventories.

  2. In situ bacterial colonization of compacted bentonite under deep geological high-level radioactive waste repository conditions.

    PubMed

    Chi Fru, E; Athar, R

    2008-06-01

    Subsurface microorganisms are expected to invade, colonize, and influence the safety performance of deep geological spent nuclear fuel (SNF) repositories. An understanding of the interactions of subsurface dwelling microbial communities with the storage is thus essential. For this to be achieved, experiments must be conducted under in situ conditions. We investigated the presence of groundwater microorganisms in repository bentonite saturated with groundwater recovered from tests conducted at the Aspö underground Hard Rock Laboratory in Sweden. A 16S ribosomal RNA and dissimilatory bisulfite reductase gene distribution between the bentonite and groundwater samples suggested that the sulfate-reducing bacteria widespread in the aquifers were not common in the clay. Aerophilic bacteria could be cultured from samples run at or=67 degrees C. Generally, the largely gram-negative groundwater microorganisms were poorly represented in the bentonite while the gram-positive bacteria commonly found in the clay predominated. Thus, bentonite compacted to a density of approximately 2 g cm(-3) together with elevated temperatures might discourage the mass introduction of the predominantly mesophilic granitic aquifer bacteria into future SNF repositories in the long run. PMID:18379777

  3. Models for impurity effects in tokamaks

    SciTech Connect

    Hogan, J.T.

    1980-03-01

    Models for impurity effects in tokamaks are described with an emphasis on the relationship between attainment of high ..beta.. and impurity problems. We briefly describe the status of attempts to employ neutral beam heating to achieve high ..beta.. in tokamaks and propose a qualitative model for the mechanism by which heavy metal impurities may be produced in the startup phase of the discharge. We then describe paradoxes in impurity diffusion theory and discuss possible resolutions in terms of the effects of large-scale islands and sawtooth oscillations. Finally, we examine the prospects for the Zakharov-Shafranov catastrophe (long time scale disintegration of FCT equilibria) in the context of present and near-term experimental capability.

  4. Influence of magnetic shear on impurity transport

    SciTech Connect

    Nordman, H.; Fueloep, T.; Candy, J.; Strand, P.; Weiland, J.

    2007-05-15

    The magnetic shear dependence of impurity transport in tokamaks is studied using a quasilinear fluid model for ion temperature gradient (ITG) and trapped electron (TE) mode driven turbulence in the collisionless limit and the results are compared with nonlinear gyrokinetic results using GYRO [J. Candy and R. E. Waltz, J. Comput. Phys 186, 545 (2003)]. It is shown that the impurity transport is sensitive to the magnetic shear, in particular for weak, negative, and large positive shear where a strong reduction of the effective impurity diffusivity is obtained. The fluid and gyrokinetic results are in qualitative agreement, with the gyrokinetic diffusivities typically a factor 2 larger than the fluid diffusivities. The steady state impurity profiles in source-free plasmas are found to be considerably less peaked than the electron density profiles for moderate shear. Comparisons between anomalous and neoclassical transport predictions are performed for ITER-like profiles [R. Aymar, P. Barabaschi, and Y. Shimomura, Plasma Phys. Controlled Fusion 44, 519 (2002)].

  5. Numerical Studies of Impurities in Fusion Plasmas

    DOE R&D Accomplishments Database

    Hulse, R. A.

    1982-09-01

    The coupled partial differential equations used to describe the behavior of impurity ions in magnetically confined controlled fusion plasmas require numerical solution for cases of practical interest. Computer codes developed for impurity modeling at the Princeton Plasma Physics Laboratory are used as examples of the types of codes employed for this purpose. These codes solve for the impurity ionization state densities and associated radiation rates using atomic physics appropriate for these low-density, high-temperature plasmas. The simpler codes solve local equations in zero spatial dimensions while more complex cases require codes which explicitly include transport of the impurity ions simultaneously with the atomic processes of ionization and recombination. Typical applications are discussed and computational results are presented for selected cases of interest.

  6. Impurity induced resistivity upturns in underdoped cuprates

    NASA Astrophysics Data System (ADS)

    Das, Nabyendu; Singh, Navinder

    2016-01-01

    Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model proposed by Yang, Rice and Zhang. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings. We stress that this effect is largely due to the strong electronic correlations.

  7. Lake-level history of Lake Michigan for the past 12,000 years: the record from deep lacustrine sediments

    USGS Publications Warehouse

    Colman, Steven M.; Forester, Richard M.; Reynolds, Richard L.; Sweetkind, Donald S.; King, John W.; Gangemi, Paul; Jones, Glenn A.; Keigwin, Loyd D.; Foster, David S.

    1994-01-01

    The rise of the early Holocene lake level, controlled primarily by isostatic rebound of the North Bay outlet, resulted in a prominent, planar, transgressive unconformity that eroded most of the shoreline features below present lake level. Superimposed on this overall rise in lake level, a second influx of water from Lake Agassiz temporarily raised lake levels an unknown amount about 9.1 ka. At about 7 ka, lake level may have fallen below the level of the outlet because of sharply drier climate. Sometime between 6 and 5 ka, the character of the lake changed dramatically, probably due mostly to climatic causes, becoming highly undersaturated with respect to calcium carbonate and returning primary control of lake level to the isostatically rising North Bay outlet. Post-Nipissing (about 5 ka) lake level has fallen about 6 m due to erosion of the Port Huron outlet, a trend around which occurred relatively small (± ∼2 m), short-term fluctuations controlled mainly by climatic changes. These cyclic fluctuations are reflected in the sed-imentological and sediment-magnetic properties of the sediments.

  8. Nonlocal effects in double fishnet metasurfaces nanostructured at deep subwavelength level as a path toward simultaneous sensing of multiple chemical analytes

    NASA Astrophysics Data System (ADS)

    Tanasković, Dragan; Obradov, Marko; Jakšić, Olga; Jakšić, Zoran

    2016-01-01

    Nanoplasmonic devices are among the most sensitive chemical sensors, with sensitivities reaching the single-molecule level. An especially convenient class of such sensors is that based on metasurfaces with subwavelength nanoholes, examples being extraordinary optical transmission arrays and double fishnet structures. Such structures ensure operation both in transmission and reflection mode and ensure high sensitivities and excellent coupling with external readout. In this paper we consider the possibility to tailor the response of aperture-based sensor structures by modifying the geometry of nanoholes at the deep subwavelength level through ensuring controlled use of nonlocal effects. We investigate the case where nonlocality is achieved by modifying the basic metamaterial fishnet structure (a metal-dielectric-metal sandwich with rectangular openings) by superposing additional subwavelength patterns, ensuring the appearance of new optical modes. The obtained unit cell superstructure will have multiple tailorable spectral peaks that will increase the selectivity at different wavelengths. The finite elements method was used for simulations of the proposed structures. As an example, we applied our results to the case of a benzene sensor, showing that its spectral properties and selectivity can be tuned by modifying geometry at a deep subwavelength scale. The obtained custom-designed spectral selectivity is convenient for multianalyte chemical sensing using a single structure.

  9. Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies

    SciTech Connect

    Rao, Peta Koteswara; Park, Byungguon; Lee, Sang-Tae; Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

    2011-07-01

    We report the Frenkel-Poole emission in Pt/Au Schottky contact on Ga-polarity GaN grown by molecular beam epitaxy using current-voltage-temperature (I-V-T) characteristics in the temperature ranging from 200 K to 375 K. Using thermionic emission model, the estimated Schottky barrier height is 0.49 eV at 200 K and 0.83 eV at 375 K, respectively, and it is observed that the barrier height increases with increase in temperature. The extracted emission barrier height ({phi}{sub t}) for Ga-polarity GaN Schottky diode by Frenkel-Poole theory is about 0.15 eV. Deep level transient spectroscopy study shows a deep level with activation energy of 0.44 eV, having capture cross-section 6.09 x 10{sup -14} cm{sup 2}, which is located between the metal and semiconductor interface, and trap nature is most probably associated with dislocations in Ga-polarity GaN. The analysis of I-V-T characteristics represents that the leakage current is due to effects of electrical field and temperature on the emission of electron from a trap state near the metal-semiconductor interface into continuum states associated with conductive dislocations in Ga-polarity GaN Schottky diode.

  10. Theoretical Analysis of Effects of Deep Level, Back Contact, and Absorber Thickness on Capacitance-Voltage Profiling of CdTe Thin-Film Solar Cells

    SciTech Connect

    Li, J. V.; Halverson, A. F.; Sulima, O. V.; Bansal, S.; Burst, J. M.; Barnes, T. M.; Gessert, T. A.; Levi, D. H.

    2012-05-01

    The apparent carrier density profile measured by the capacitance-voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density.

  11. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    SciTech Connect

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-12-04

    Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup −2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

  12. Precipitating Chromium Impurities in Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Salama, A. M.

    1982-01-01

    Two new treatments for silicon wafers improve solar-cell conversion efficiency by precipitating electrically-active chromium impurities. One method is simple heat treatment. Other involves laser-induced damage followed by similar heat treatment. Chromium is one impurity of concern in metallurgical-grade silicon for solar cells. In new treatment, chromium active centers are made electrically inactive by precipitating chromium from solid solution, enabling use of lower grade, lower cost silicon in cell manufacture.

  13. Role of impurities in fusion plasmas

    SciTech Connect

    Tokar, M. Z.

    2008-10-15

    The role of impurity at the plasma edge of fusion devices is considered by analysing the influence on radiation losses and anomalous transport of particle and energy. The conditions critical for the development of radiative instabilities leading to the formation of detachment and MARFE and those necessary for the creation of a stable radiating edge, protecting the wall elements from intensive heat loads, are analyzed. Mechanisms responsible for anomalous transport suppression with impurity seeding are elucidated.

  14. Method of removing phosphorus impurities from yellowcake

    SciTech Connect

    Brown, R.A.; Winkley, D.C.

    1983-04-05

    PhospHorus impurities are removed from yellowcake by dissolving it in hydrochloric or sulfuric acid to a U/sub 3/O/sub 88/ assay of at least 150 g/l at a pH of 2; precipitating uranium peroxide W hydrogen peroxide while keeping the pH between 2.2 and 2.6 and recovering the uranium peroxide from the phosphorus impurities remaining in solution.

  15. Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al0.7Ga0.3N

    SciTech Connect

    Armstrong, Andrew; Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan

    2015-05-11

    The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al0.7Ga0.3N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Furthermore, deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, which includes thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al0.7Ga0.3N.

  16. Effect of impurity doping concentration on solar cell output

    NASA Technical Reports Server (NTRS)

    Iles, P. A.; Soclof, S. I.

    1975-01-01

    Experimental measurements were made of solar cell and related photovoltaic parameters for silicon with high concentrations of dopant impurities. The cell output peaked for doping levels around 10 to the 17th power per cu cm. Independent measurements of diffusion length and open circuit voltage at high doping levels showed severe reductions at concentrations above 10 to the 18th power per cu cm. Theoretical reasons are given to explain these reductions. Indication is given of the problems requiring solution before increased cell output can be achieved at high doping levels.

  17. Elemental impurity analysis of mercuric iodide by ICP/MS

    SciTech Connect

    Cross, E.S.; Mroz, E.; Olivares, J.A.

    1994-06-01

    A method has been developed to analyze mercuric iodide (HgI{sub 2}) for elemental contamination using Inductively Coupled Plasma/Mass Spectroscopy (ICP/MS). This paper discusses the ICP/MS method, the effectiveness of purification schemes for removing impurities from HgI{sub 2}, as well as preliminary correlations between HgI{sub 2} detector performance and elemental contamination levels. The purified HgI{sub 2} is grown into a single crystal by physical vapor transport. The crystal are cut into slices and they are fabricated into room temperature radiation detectors and photocells. Crystals that produce good resolution gamma detector do not necessarily make good resolution photocells or x-ray detectors. Many factors other than elemental impurities may contribute to these differences in performance.

  18. Extrinsic Spin Hall Effect Due to Transition-Metal Impurities

    NASA Astrophysics Data System (ADS)

    Tanaka, T.; Kontani, H.

    2012-11-01

    We investigate the extrinsic spin Hall effect in the electron gas model due to transition-metal impurities based on the single-impurity Anderson model with orbital degrees of freedom. Both the skew scattering and side jump mechanisms are analyzed in a unified way, and the significant role of orbital degrees of freedom are clarified. The obtained spin Hall conductivities are in proportion to the spin-orbit polarization at the Fermi level < {l} . {s} >_{μ} as is the case with the intrinsic spin Hall effect: skew scattering term {SH}^{ss} ∝ < {l} . {s} >_{μ} δ_1 σ_{xx}, and side jump term σ_{SH}^{sj} ∝ < {l} . {s} >_{μ}, where δ_1 is the phase shift for p (l = 1) partial wave. Furthermore, the present study indicates the existence of a nontrivial close relationship between the intrinsic term σ_{SH}^{int} and the extrinsic side jump term σ_{SH}^{sj}.

  19. Effects of Impurities on Alumina-Niobium InterfacialMicrostructures

    SciTech Connect

    McKeown, Joseph T.; Sugar, Joshua D.; Gronsky, Ronald; Glaeser,Andreas M.

    2005-06-20

    Optical microscopy, scanning electron microscopy, and transmission electron microscopy were employed to examine the interfacial microstructural effects of impurities in alumina substrates used to fabricate alumina-niobium interfaces via liquid-film-assisted joining. Three types of alumina were used: undoped high-purity single-crystal sapphire; a high-purity, high-strength polycrystalline alumina; and a lower-purity, lower-strength polycrystalline alumina. Interfaces formed between niobium and both the sapphire and high-purity polycrystalline alumina were free of detectable levels of impurities. In the lower-purity alumina, niobium silicides were observed at the alumina-niobium interface and on alumina grain boundaries near the interface. These silicides formed in small-grained regions of the alumina and were found to grow from the interface into the alumina along grain boundaries. Smaller silicide precipitates found on grain boundaries are believed to form upon cooling from the bonding temperature.

  20. Transport of Impurity Ions in the Wendelstein 7-AS Stellarator Plasma

    SciTech Connect

    Burhenn, Rainer; Baldzuhn, Juergen; Beidler, Craig; Brakel, Rudolf; Ehmler, Hartmut; Giannone, Louis; Grigull, Peter; Hirsch, Matthias; Knauer, Jens; Krychowiak, Maciej; Maassberg, Henning; McCormick, Kent; Pasch, Ekkehard; Weller, Arthur; Ida, Katsumi

    2006-01-15

    The impact of global plasma parameters on impurity transport in the stellarator W7-AS was investigated by laser blow-off technique. Both, density and heating power were identified to have a strong influence on impurity confinement {tau}{sub I} {approx} n{sub e}{sup 1.2}/P{sub ECRH}{sup 0.8}. In spite of stationary conditions at lower densities, an increasing trend for accumulation was observed at plasma densities beyond 5{center_dot}1019 m-3 due to reduction of the diffusion coefficients. Up to densities of at least 9{center_dot}1019 m-3, launching of electron cyclotron resonance heating (ECRH) power of 1.2 MW is able to counteract the impurity accumulation by deterioration of the impurity confinement with heating power according to the scaling law as given above. In neutral beam injection (NBI) heated plasmas at densities higher than 1{center_dot}1020m-3, long confinement times were observed, often accompanied by loss of density control and degradation of plasma energy due to increasing radiation losses. The installation of island divertor allowed a general extension of the range of accessible densities up to 4{center_dot}1020m-3: beyond a certain power-dependent threshold density (1.5-2.1{center_dot}1020m-3), the plasma enters the High Density H-mode (HDH) regime and the impurity confinement time drops to values comparable to the energy confinement time. High density plasmas could be sustained quasi-stationary with a low level of impurity radiation. The favourable impurity behavior goes along with a reduction of the inward impurity convection in the core plasma and possible changes in the edge transport. For the characterization of the general impurity behavior in W7-AS plasmas the usual transport models for axisymmetric devices are not sufficient and additional stellarator specific processes have to be considered.

  1. Mechanisms of impurity diffusion in rutile

    SciTech Connect

    Peterson, N.L.; Sasaki, J.

    1984-01-01

    Tracer diffusion of /sup 46/Sc, /sup 51/Cr, /sup 54/Mn, /sup 59/Fe, /sup 60/Co, /sup 63/Ni, and /sup 95/Zr, was measured as functions of crystal orientation, temperature, and oxygen partial pressure in rutile single crystals using the radioactive tracer sectioning technique. Compared to cation self-diffusion, divalent impurities (e.g., Co and Ni) diffuse extremely rapidly in TiO/sub 2/ and exhibit a large anisotropy in the diffusion behavior; divalent-impurity diffusion parallel to the c-axis is much larger than it is perpendicular to the c-axis. The diffusion of trivalent impurity ions (Sc and Cr) and tetravalent impurity ions (Zr) is similar to cation self-diffusion, as a function of temperature and of oxygen partial pressure. The divalent impurity ions Co and Ni apparently diffuse as interstitial ions along open channels parallel to the c-axis. The results suggest that Sc, Cr, and Zr ions diffuse by an interstitialcy mechanism involving the simultaneous and cooperative migration of tetravalent interstitial titanium ions and the tracer-impurity ions. Iron ions diffused both as divalent and as trivalent ions. 8 figures.

  2. The effect of elemental and hydrocarbon impurities on mercuric iodide gamma ray detector performance

    NASA Astrophysics Data System (ADS)

    Cross, Eilene S.; Buffleben, George; Soria, Ed; James, Ralph; Schieber, Michael; Natarajan, Raj; Gerrish, Vern

    Mercuric iodide is a room temperature semiconductor material that is used for gamma ray and x-ray radiation detection. Mercuric iodide is synthesized from mercuric chloride and potassium iodide and is then purified by a series of melts and sublimation steps and by zone refining. The mercuric iodide is grown into crystals and platelets and then fabricated into detectors. Elemental contamination may be a determining factor in the performance of these detectors. These contaminates may be present in the starting material or may be introduced during, or be unaffected by, the purification, growth or fabrication steps. Methods have been developed for the analysis of trace levels of elemental contamination. Inductively Coupled Plasma/Mass Spectroscopy (ICP/MS), Inductively Coupled Plasma/Optical Emission Spectroscopy (ICP/OES) and Gas Chromatography/Mass Spectroscopy (GC/MS) are used to determine sub ppm levels of many trace elemental impurities. Trace levels of many elemental impurities in the raw mercuric iodide are significantly reduced during the purification and zone refining processes. Though the levels of impurities are reduced, poor performing mercuric iodide detectors have contamination levels remaining or reintroduced which are higher for Ag, Al, Ca, Cu, Mg, Mn, Na, Pb and Zn than detectors with good gamma ray response. This paper will discuss the analytical methodology, the effects of purification on impurity levels, and the correlation between detector performance and impurity levels.

  3. Groundwater level changes in a deep well in response to a magma intrusion event on Kilauea Volcano, Hawai'i

    USGS Publications Warehouse

    Hurwitz, S.; Johnston, M.J.S.

    2003-01-01

    On May 21, 2001, an abrupt inflation of Kilauea Volcano's summit induced a rapid and large increase in compressional strain, with a maximum of 2 ??strain recorded by a borehole dilatometer. Water level (pressure) simultaneously dropped by 6 cm. This mode of water level change (drop) is in contrast to that expected for compressional strain from poroelastic theory, and therefore it is proposed that the stress applied by the intrusion has caused opening of fractures or interflows that drained water out of the well. Upon relaxation of the stress recorded by the dilatometer, water levels have recovered at a similar rate. The proposed model has implications for the analysis of ground surface deformation and for mechanisms that trigger phreatomagmatic eruptions.

  4. Impurity segregation in zone-refined precursors for crystalline halide scintillators

    NASA Astrophysics Data System (ADS)

    Swider, S.; Lam, S.; Motakef, S.; Donohoe, E.; Coers, L.; Taylor, S.; Spencer, S.

    2015-06-01

    Successful growth of halide scintillator crystals depends on a supply of ultra-high purity (UHP) precursor materials. Metallic interstitials and substitutions may provide traps that quench luminescence. Oxygen impurities can create competing compounds within a matrix, such as oxyhalides, that disrupt crystallinity and nucleate cracks. Using mass spectroscopy and oxygen combustion analysis, we analyzed impurities in SrI2, EuI2, and YCl3 precursors before and after zone refining. The data show most alkali and alkali earth impurities segregated easily. However, with the exception of iron, many transition metals were incorporated into the solid. Reliable oxygen measurements proved difficult to achieve. Additional oxygen was measured in nitrates and sulfates, via ion chromatography. Zone refining reduced the overall impurity content, but levels remained above a 10 ppm target.

  5. Photoluminescence imaging of electronic-impurity-induced exciton quenching in single-walled carbon nanotubes.

    PubMed

    Crochet, Jared J; Duque, Juan G; Werner, James H; Doorn, Stephen K

    2012-02-01

    The electronic properties of single-walled carbon nanotubes can be altered by surface adsorption of electronic impurities or dopants. However, fully understanding the influence of these impurities is difficult because of the inherent complexity of the solution-based colloidal chemistry of nanotubes, and because of a lack of techniques for directly imaging dynamic processes involving these impurities. Here, we show that photoluminescence microscopy can be used to image exciton quenching in semiconducting single-walled carbon nanotubes during the early stages of chemical doping with two different species. The addition of AuCl(3) leads to localized exciton-quenching sites, which are attributed to a mid-gap electronic impurity level, and the adsorbed species are also found sometimes to be mobile on the surface of the nanotubes. The addition of H(2)O(2) leads to delocalized exciton-quenching hole states, which are responsible for long-range photoluminescence blinking, and are also mobile.

  6. Classification of illicit heroin by UPLC-Q-TOF analysis of acidic and neutral manufacturing impurities.

    PubMed

    Liu, Cuimei; Hua, Zhendong; Bai, Yanping

    2015-12-01

    The illicit manufacture of heroin results in the formation of trace levels of acidic and neutral manufacturing impurities that provide valuable information about the manufacturing process used. In this work, a new ultra performance liquid chromatography-quadrupole-time of flight mass spectrometry (UPLC-Q-TOF) method; that features high resolution, mass accuracy and sensitivity for profiling neutral and acidic heroin manufacturing impurities was developed. After the UPLC-Q-TOF analysis, the retention times and m/z data pairs of acidic and neutral manufacturing impurities were detected, and 19 peaks were found to be evidently different between heroin samples from "Golden Triangle" and "Golden Crescent". Based on the data set of these 19 impurities in 150 authentic heroin samples, classification of heroin geographic origins was successfully achieved utilizing partial least squares discriminant analysis (PLS-DA). By analyzing another data set of 267 authentic heroin samples, the developed discrimiant model was validated and proved to be accurate and reliable.

  7. Cr impurity-induced electronic states in ZnTe(110) surface

    NASA Astrophysics Data System (ADS)

    Kanazawa, Ken; Nishimura, Taku; Yoshida, Shoji; Shigekawa, Hidemi; Kuroda, Shinji

    2015-08-01

    The impurity states of Cr atoms, which substituted Zn sites in the topmost layer of a p-type ZnTe(110) surface, were investigated by scanning tunneling microscopy/spectroscopy (STM/STS) and we firstly observed Cr-induced impurity states in the energy gap region of the host ZnTe including the unoccupied states by STS. Furthermore, we compared the observed energy levels and spatial distributions of the local density of states with those in the previous theoretical study [Katayama-Yoshida et al., Phys. Status Solidi A 204, 15 (2007)] and successfully identified the impurity states as the respective spin-polarized impurity states predicted by the theoretical study.

  8. Subthalamic Nucleus Deep Brain Stimulation Modulate Catecholamine Levels with Significant Relations to Clinical Outcome after Surgery in Patients with Parkinson’s Disease

    PubMed Central

    Yamamoto, Tatsuya; Uchiyama, Tomoyuki; Higuchi, Yoshinori; Asahina, Masato; Hirano, Shigeki; Yamanaka, Yoshitaka; Kuwabara, Satoshi

    2015-01-01

    Aims Although subthalamic nucleus deep brain stimulation (STN-DBS) is effective in patients with advanced Parkinson’s disease (PD), its physiological mechanisms remain unclear. Because STN-DBS is effective in patients with PD whose motor symptoms are dramatically alleviated by L-3,4-dihydroxyphenylalanine (L-DOPA) treatment, the higher preoperative catecholamine levels might be related to the better clinical outcome after surgery. We aimed to examine the correlation between the preoperative catecholamine levels and postoperative clinical outcome after subthalamic nucleus deep brain stimulation. The effectiveness of STN-DBS in the patient who responded well to dopaminergic medication suggest the causal link between the dopaminergic system and STN-DBS. We also examined how catecholamine levels were modulated after subthalamic stimulation. Methods In total 25 patients with PD were enrolled (Mean age 66.2 ± 6.7 years, mean disease duration 11.6 ± 3.7 years). Mean levodopa equivalent doses were 1032 ± 34.6 mg before surgery. Cerebrospinal fluid and plasma catecholamine levels were measured an hour after oral administration of antiparkinsonian drugs before surgery. The mean Unified Parkinson’s Disease Rating Scale scores (UPDRS) and the Parkinson’s disease Questionnaire-39 (PDQ-39) were obtained before and after surgery. Of the 25 patients, postoperative cerebrospinal fluid and plasma were collected an hour after oral administration of antiparkinsonian drugs during on stimulation at follow up in 11 patients. Results Mean levodopa equivalent doses significantly decreased after surgery with improvement in motor functions and quality of life. The preoperative catecholamine levels had basically negative correlations with postoperative motor scores and quality of life, suggesting that higher preoperative catecholamine levels were related to better outcome after STN-DBS. The preoperative plasma levels of L-DOPA had significantly negative correlations with

  9. Arthropod Phylogenetics in Light of Three Novel Millipede (Myriapoda: Diplopoda) Mitochondrial Genomes with Comments on the Appropriateness of Mitochondrial Genome Sequence Data for Inferring Deep Level Relationships

    PubMed Central

    Brewer, Michael S.; Swafford, Lynn; Spruill, Chad L.; Bond, Jason E.

    2013-01-01

    Background Arthropods are the most diverse group of eukaryotic organisms, but their phylogenetic relationships are poorly understood. Herein, we describe three mitochondrial genomes representing orders of millipedes for which complete genomes had not been characterized. Newly sequenced genomes are combined with existing data to characterize the protein coding regions of myriapods and to attempt to reconstruct the evolutionary relationships within the Myriapoda and Arthropoda. Results The newly sequenced genomes are similar to previously characterized millipede sequences in terms of synteny and length. Unique translocations occurred within the newly sequenced taxa, including one half of the Appalachioria falcifera genome, which is inverted with respect to other millipede genomes. Across myriapods, amino acid conservation levels are highly dependent on the gene region. Additionally, individual loci varied in the level of amino acid conservation. Overall, most gene regions showed low levels of conservation at many sites. Attempts to reconstruct the evolutionary relationships suffered from questionable relationships and low support values. Analyses of phylogenetic informativeness show the lack of signal deep in the trees (i.e., genes evolve too quickly). As a result, the myriapod tree resembles previously published results but lacks convincing support, and, within the arthropod tree, well established groups were recovered as polyphyletic. Conclusions The novel genome sequences described herein provide useful genomic information concerning millipede groups that had not been investigated. Taken together with existing sequences, the variety of compositions and evolution of myriapod mitochondrial genomes are shown to be more complex than previously thought. Unfortunately, the use of mitochondrial protein-coding regions in deep arthropod phylogenetics appears problematic, a result consistent with previously published studies. Lack of phylogenetic signal renders the

  10. a Study of Deep Levels in COPPER-INDIUM-SELENIUM(2) by Current-Voltage Capacitance-Voltage and Capacitance Transient Measurements on Cadmium-Sulfide -SELENIUM(2)

    NASA Astrophysics Data System (ADS)

    Christoforou, Nicholas

    A study was made of the deep levels in CuInSe _ 2 thin films by Current-Voltage, Capacitance-Voltage, Capacitance-Temperature, and Capacitance Transient measurements on CdS/CuInSe_ 2 solar cells. To accomplish this study, a semi -automated system for Current-Voltage (I-V), Capacitance -Voltage (C-V), and Deep Level Transient Spectroscopy (DLTS) has been developed for the study of semiconductor devices. I -V, C-V, and DLTS measurements can be taken over a wide temperature range, from 100 K up to 450 K. Software for processing the data obtained has also been developed. This thesis presents the first reported successful measurements of deep levels in CuInSe_ 2 by DLTS measurements. The results indicate the presence in the p-type CuInSe_ 2 films of a majority-carrier (hole) trap located 0.70 eV above the valence band edge and a minority-carrier (electron) trap located 0.35 eV below the conduction band edge. Simulation studies show that the width and shape of the DLTS spectra for the hole trap can be explained only by assuming that the traps are distributed in energy around 0.70 eV. Our results are consistent with traps distributed from 0.65 to 0.75 eV, but it is not possible to determine uniquely the exact distribution. The electron trap at 0.35 eV does is not distributed in energy. There is strong evidence from the C-V, C-T, and I-V measurements, and indirectly from the DLTS measurements, that there is a large hole trap concentration in the CuInSe _ 2 layer close to the interface with the CdS. These interface states have a concentration of approximately 5 times 10 ^{15} cm^{ -3}, compared to a doping density in the CuInSe _ 2 layer of 1 times 10^{15} cm ^{-3}, a hole trap concentration of 5 times 10^{14 } cm^{-3}, and an electron trap concentration of 0.5 times 10^{14} cm ^{-3}. The I-V measurements are consistent with charge transport via an interface recombination/tunneling mechanism, where the tunneling is assisted by the interface states.

  11. Donor and double-donor transitions of the carbon vacancy related EH6/7 deep level in 4H-SiC

    NASA Astrophysics Data System (ADS)

    Booker, I. D.; Janzén, E.; Son, N. T.; Hassan, J.; Stenberg, P.; Sveinbjörnsson, E. Ö.

    2016-06-01

    Using medium- and high-resolution multi-spectra fitting of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), optical O-DLTS and optical-electrical (OE)-MCTS measurements, we show that the EH6/7 deep level in 4H-SiC is composed of two strongly overlapping, two electron emission processes with thermal activation energies of 1.49 eV and 1.58 eV for EH6 and 1.48 eV and 1.66 eV for EH7. The electron emission peaks of EH7 completely overlap while the emission peaks of EH6 occur offset at slightly different temperatures in the spectra. OE-MCTS measurements of the hole capture cross section σp0(T) in p-type samples reveal a trap-Auger process, whereby hole capture into the defect occupied by two electrons leads to a recombination event and the ejection of the second electron into the conduction band. Values of the hole and electron capture cross sections σn(T) and σp(T) differ strongly due to the donor like nature of the deep levels and while all σn(T) have a negative temperature dependence, the σp(T) appear to be temperature independent. Average values at the DLTS measurement temperature (˜600 K) are σn2+(T) ≈ 1 × 10-14 cm2, σn+(T) ≈ 1 × 10-14 cm2, and σp0(T) ≈ 9 × 10-18 cm2 for EH6 and σn2+(T) ≈ 2 × 10-14 cm2, σn+(T) ≈ 2 × 10-14 cm2, σp0(T) ≈ 1 × 10-20 cm2 for EH7. Since EH7 has already been identified as a donor transition of the carbon vacancy, we propose that the EH6/7 center in total represents the overlapping first and second donor transitions of the carbon vacancy defects on both inequivalent lattice sites.

  12. Intrinsic point defects and their interaction with impurities in mono-crystalline zinc oxide

    NASA Astrophysics Data System (ADS)

    Svensson, Bengt G.

    2015-03-01

    Zinc oxide (ZnO) is a direct and wide band-gap semiconductor with several attractive features, like an exciton binding energy of ~ 60 meV, for light emitting devices, photovoltaics and spintronics. In the past decade, ZnO has received tremendous attention by the semiconductor physics community and many challenging issues have been addressed, especially the ``native'' n-type conductivity, the role of intrinsic point defects, and the realization of reproducible p-type doping. The latter is, indeed, decisive for a true breakthrough of ZnO-based optoelectronics. In this contribution, recent progress in our understanding of the interaction between intrinsic point defects and impurities in ZnO will be discussed. Aluminum (Al) is often introduced intentionally to accomplish high n-type conductivity since Al on Zn-site (AlZn) acts as a shallow donor. However, AlZn was recently found to react strongly with Zn vacancies (VZn) and the resulting complex (AlZn-VZn) is energetically favorable. The AlZn-VZn complex is a deep acceptor limiting the n-type doping efficiency and this finding is expected to hold in general for complexes between VZn and group-III elements. Further, implantation of self-ions (Zn and O) has been demonstrated to affect radically the balance of intrinsic point defects where an excess of Zn interstitials gives rise to a dramatic depletion of residual Li impurities on Zn-site (LiZn) whilst the opposite holds for an excess of O interstitials. In fact, this behavior appears to be of general validity and Li depletion occurs for a wide variety of implanted elements incorporated into the Zn sub-lattice while Li pile-up occurs for elements residing on O-site. Finally, the most prominent deep-level defect in ZnO, labelled E3, will be shown to involve hydrogen. E3 exists in most ZnO materials, irrespective of the growth method used, and evidence for a center formed by reaction between interstitial hydrogen and primary defects on the Zn sub-lattice will be given.

  13. Satellite Water Impurity Marker (SWIM) for predicting seasonal cholera outbreaks

    NASA Astrophysics Data System (ADS)

    Jutla, A. S.; Akanda, A. S.; Islam, S.

    2011-12-01

    Prediction of outbreaks of cholera, a deadly water related disease, remains elusive. Since coastal brackish water provides a natural ecological niche for cholera bacteria and because a powerful evidence of new biotypes is emerging, it is highly unlikely that cholera will be fully eradicated. Therefore, it is necessary to develop cholera prediction model with several months' of lead time. Satellite based estimates of chlorophyll, a surrogate for phytoplankton abundance, has been associated with proliferation of cholera bacteria. However, survival of cholera bacteria in a variety of coastal ecological environment put constraints on predictive abilities of chlorophyll algorithm since it only measures greenness in coastal waters. Here, we propose a new remote sensing reflectance based statistical index: Satellite Water Impurity Marker, or SWIM. This statistical index estimates impurity levels in the coastal waters and is based on the variability observed in the difference between the blue (412nm) and green (555nm) wavelengths in coastal waters. The developed index is bounded between clear and impure water and shows the ability to predict cholera outbreaks in the Bengal Delta with a predicted r2 of 78% with two months lead time. We anticipate that a predictive system based on SWIM will provide essential lead time allowing effective intervention and mitigation strategies to be developed for other cholera endemic regions of the world.

  14. Deep XMM observations of Draco rule out at the 99 per cent confidence level a dark matter decay origin for the 3.5 keV line

    NASA Astrophysics Data System (ADS)

    Jeltema, Tesla; Profumo, Stefano

    2016-06-01

    We searched for an X-ray line at energies around 3.5 keV in deep, ˜1.6 Ms XMM-Newton observations of the dwarf spheroidal galaxy Draco. No line was found in either the Metal Oxide Semi-conductor (MOS) or the p-type/n-type semiconductor (PN) detectors. The data in this energy range are completely consistent with a single, unfolded power-law modelling the particle background, which dominates at these energies, plus instrumental lines; the addition of a ˜3.5 keV line feature gives no improvement to the fit. The corresponding upper limit on the line flux rules out a dark matter decay origin for the 3.5 keV line found in observations of clusters of galaxies and in the Galactic Centre at greater than 99 per cent confidence level.

  15. Identification of the novel candidate genes and variants in boar liver tissues with divergent skatole levels using RNA deep sequencing.

    PubMed

    Gunawan, Asep; Sahadevan, Sudeep; Cinar, Mehmet Ulas; Neuhoff, Christiane; Große-Brinkhaus, Christine; Frieden, Luc; Tesfaye, Dawit; Tholen, Ernst; Looft, Christian; Wondim, Dessie Salilew; Hölker, Michael; Schellander, Karl; Uddin, Muhammad Jasim

    2013-01-01

    Boar taint is the unpleasant odour of meat derived from non-castrated male pigs, caused by the accumulation of androstenone and skatole in fat. Skatole is a tryptophan metabolite produced by intestinal bacteria in gut and catabolised in liver. Since boar taint affects consumer's preference, the aim of this study was to perform transcriptome profiling in liver of boars with divergent skatole levels in backfat by using RNA-Seq. The total number of reads produced for each liver sample ranged from 11.8 to 39.0 million. Approximately 448 genes were differentially regulated (p-adjusted <0.05). Among them, 383 genes were up-regulated in higher skatole group and 65 were down-regulated (p<0.01, FC>1.5). Differentially regulated genes in the high skatole liver samples were enriched in metabolic processes such as small molecule biochemistry, protein synthesis, lipid and amino acid metabolism. Pathway analysis identified the remodeling of epithelial adherens junction and TCA cycle as the most dominant pathways which may play important roles in skatole metabolism. Differential gene expression analysis identified candidate genes in ATP synthesis, cytochrome P450, keratin, phosphoglucomutase, isocitrate dehydrogenase and solute carrier family. Additionally, polymorphism and association analysis revealed that mutations in ATP5B, KRT8, PGM1, SLC22A7 and IDH1 genes could be potential markers for skatole levels in boars. Furthermore, expression analysis of exon usage of three genes (ATP5B, KRT8 and PGM1) revealed significant differential expression of exons of these genes in different skatole levels. These polymorphisms and exon expression differences may have impacts on the gene activity ultimately leading to skatole variation and could be used as genetic marker for boar taint related traits. However, further validation is required to confirm the effect of these genetic markers in other pig populations in order to be used in genomic selection against boar taint in pig breeding

  16. Identification of the Novel Candidate Genes and Variants in Boar Liver Tissues with Divergent Skatole Levels Using RNA Deep Sequencing

    PubMed Central

    Gunawan, Asep; Sahadevan, Sudeep; Cinar, Mehmet Ulas; Neuhoff, Christiane; Große-Brinkhaus, Christine; Frieden, Luc; Tesfaye, Dawit; Tholen, Ernst; Looft, Christian; Wondim, Dessie Salilew; Hölker, Michael; Schellander, Karl; Uddin, Muhammad Jasim

    2013-01-01

    Boar taint is the unpleasant odour of meat derived from non-castrated male pigs, caused by the accumulation of androstenone and skatole in fat. Skatole is a tryptophan metabolite produced by intestinal bacteria in gut and catabolised in liver. Since boar taint affects consumer’s preference, the aim of this study was to perform transcriptome profiling in liver of boars with divergent skatole levels in backfat by using RNA-Seq. The total number of reads produced for each liver sample ranged from 11.8 to 39.0 million. Approximately 448 genes were differentially regulated (p-adjusted <0.05). Among them, 383 genes were up-regulated in higher skatole group and 65 were down-regulated (p<0.01, FC>1.5). Differentially regulated genes in the high skatole liver samples were enriched in metabolic processes such as small molecule biochemistry, protein synthesis, lipid and amino acid metabolism. Pathway analysis identified the remodeling of epithelial adherens junction and TCA cycle as the most dominant pathways which may play important roles in skatole metabolism. Differential gene expression analysis identified candidate genes in ATP synthesis, cytochrome P450, keratin, phosphoglucomutase, isocitrate dehydrogenase and solute carrier family. Additionally, polymorphism and association analysis revealed that mutations in ATP5B, KRT8, PGM1, SLC22A7 and IDH1 genes could be potential markers for skatole levels in boars. Furthermore, expression analysis of exon usage of three genes (ATP5B, KRT8 and PGM1) revealed significant differential expression of exons of these genes in different skatole levels. These polymorphisms and exon expression differences may have impacts on the gene activity ultimately leading to skatole variation and could be used as genetic marker for boar taint related traits. However, further validation is required to confirm the effect of these genetic markers in other pig populations in order to be used in genomic selection against boar taint in pig breeding

  17. Impurities in the Lithium Tokamak Experiment

    NASA Astrophysics Data System (ADS)

    Boyle, D. P.; Bell, R. E.; Kaita, R.; Majeski, R.; Biewer, T. M.; Gray, T. K.; Tritz, K.; Widmann, K.

    2014-10-01

    The Lithium Tokamak Experiment (LTX) is designed to study the low-recycling regime through the use of close-fitting, lithium-coated, heatable shell quadrants surrounding the plasma volume. Lithium coatings can getter and bury impurities, but they can also become covered by impurity compounds. Liquefied coatings can both dissolve impurity compounds and bring them to the surface, while sputtering and evaporation rates increase strongly with temperature. Here, we use spectroscopic measurements to assess the effects of varying wall conditions on plasma impurities, mainly Li, C, and O. A passive Doppler spectroscopy system measures toroidal and poloidal impurity profiles using fixed-wavelength and variable-wavelength visible spectrometers. In addition, survey and high-resolution extreme ultraviolet spectrometers detect emission from higher charge states. Preliminary results show that fresh Li coatings generally reduced C and O emission. C emission decreased sharply following the first solid Li coatings. Inverted toroidal profiles in a discharge with solid Li coatings show peaked Li III emissivity and temperature profiles. Recently, experiments with fresh liquid coatings led to especially strong O reduction. Results from these and additional experiments will be presented. Supported by US DOE Contracts DE-AC02-09CH11466 and DE-AC05-00OR22725.

  18. Gettering of metal impurities in silicon

    SciTech Connect

    Schroeter, W.; Spiecker, E.; Apel, M.

    1995-08-01

    Gettering means the removal of metallic impurities from the device-active area of the wafer by transport to a predesigned region-called gettering layer (GL). We introduce an interface at z = d{sub GL}, at which the effect of the gettering mechanism on the metal impurity distribution in the wafer is quantified, e.g. by specifying currents or by interfacial reactions of metal impurities, self interstitials etc. between GL and wafer. In response metal impurities will diffuse out of the wafer into the gettering layer. Following such a concept, in general three species of the metal impurity (M) are involved in gettering: M{sub p} {l_arrow} M{sub i} {l_arrow} M{sub GL}. M{sub p} denotes immobile species in the wafer, which are precipitated into suicides or segregated at extended defects or whose diffusivity is too small to contribute noticeably to transport during the gettering procedure - like many substitutional metal species.

  19. Diagnostic accuracy of deep vein thrombosis is increased by analysis using combined optimal cut-off values of postoperative plasma D-dimer levels

    PubMed Central

    JIANG, YONG; LI, JIE; LIU, YANG; ZHANG, WEIGUO

    2016-01-01

    The present study aimed to evaluate the accuracy of analysis using optimal cut-off values of plasma D-dimer levels in the diagnosis of deep vein thrombosis (DVT). A total of 175 orthopedic patients with DVT and 162 patients without DVT were included in the study. Ultrasonic color Doppler imaging was performed on lower limb veins prior to and following orthopedic surgery in order to determine the types of orthopedic conditions that were present. An enzyme-linked fluorescent assay was performed to detect the expression levels of D-dimer in plasma, and receiver operating characteristic analysis was performed to predict the occurrence of DVT on the basis of the expression levels of D-dimer. After surgery, the expression levels of D-dimer in the plasma of DVT patients were significantly higher in comparison with those in orthopedic patients without DVT (P<0.05). When the patients were divided into subgroups according to the underlying orthopedic condition, the expression levels of D-dimer in the plasma of each subgroup were higher 1 day after orthopedic surgery in comparison to those prior to surgery (P<0.05). The diagnostic accuracy achieved using combined optimal cut-off values at 1 and 3 days post-surgery was significantly higher than the accuracy when using a single optimal cut-off value (P<0.05). In conclusion, detection of D-dimer expression levels at 1 day post-orthopedic surgery may be important in predicting DVT. In addition, the diagnostic accuracy of DVT is significantly increased by analysis using combined optimal cut-off values of D-dimer plasma expression levels. PMID:27168793

  20. A REVIEW OF RECENT IMPURITY MEASUREMENTS OF LANL MATERIAL

    SciTech Connect

    Edwards, T.

    2012-07-12

    exceptional limits. Impurity data from additional random samples of the LANL material would be needed to increase the confidence level associated with the results from a nonparametric approach for investigating the population quantiles of interest. For S, F, and Cl, only a nonparametric approach was used. A second approach, a parametric approach, was attempted for C, P, and N. However, the results for the P and N measurements indicated that each of their respective populations was not well modeled by a normal or by a lognormal distribution. Thus, the conclusions for the P and N populations were those provided by the nonparametric approach. From the parametric approach, the results for C indicated no issue in the LANL material meeting the maximum limit for this element assuming that the measurements for this element follow a lognormal distribution.

  1. Revised shallow and deep water-level and storage-volume changes in the Equus Beds Aquifer near Wichita, Kansas, predevelopment to 1993

    USGS Publications Warehouse

    Hansen, Cristi V.; Lanning-Rush, Jennifer L.; Ziegler, Andrew C.

    2013-01-01

    credits from the Equus Beds aquifer by the city of Wichita. The 1993 water levels correspond to the lowest recorded levels and largest storage declines since 1940. Revised and new water-level maps of shallow and deep layers were developed to better represent the general condition of the aquifer. Only static water levels were used to better represent the general condition of the aquifer and comply with Wichita’s ASR permits. To ensure adequate data density, the January 1993 period was expanded to October 1992 through February 1993. Static 1993 water levels from the deep aquifer layer of the Equus Beds aquifer possibly could be used as the lower baseline for regulatory purposes. Previously, maps of water-level changes used to estimate the storage-volume changes included a combination of static (unaffected by pumping or nearby pumping) and stressed (affected by pumping or nearby pumping) water levels from wells. Some of these wells were open to the shallow aquifer layer and some were open to the deep aquifer layer of the Equus Beds aquifer. In this report, only static water levels in the shallow aquifer layer were used to determine storage-volume changes. The effects on average water-level and storage-volume change from the use of mixed, stressed water levels and a specific yield of 0.20 were compared to the use of static water levels in the shallow aquifer and a specific yield of 0.15. This comparison indicates that the change in specific yield causes storage-volume changes to decrease about 25 percent, whereas the use of static water levels in the shallow aquifer layer causes an increase of less than 4 percent. Use of a specific yield of 0.15 will result in substantial decreases in the amount of storage-volume change compared to those reported previously that were calculated using a specific yield of 0.20. Based on these revised water-level maps and computations, the overall decline and change in storage from predevelopment to 1993 represented a loss in storage of about

  2. Climate change and ocean acidification impacts on lower trophic levels and the export of organic carbon to the deep ocean

    NASA Astrophysics Data System (ADS)

    Yool, A.; Popova, E. E.; Coward, A. C.; Bernie, D.; Anderson, T. R.

    2013-02-01

    Most future projections forecast significant and ongoing climate change during the 21st century, but with the severity of impacts dependent on efforts to restrain or reorganise human activity to limit carbon dioxide (CO2) emissions. A major sink for atmospheric CO2, and a key source of biological resources, the World Ocean is widely anticipated to undergo profound physical and - via ocean acidification - chemical changes as direct and indirect results of these emissions. Given strong biophysical coupling, the marine biota is also expected to experience strong changes in response to this anthropogenic forcing. Here we examine the large-scale response of ocean biogeochemistry to climate and acidification impacts during the 21st century for Representative Concentration Pathways (RCPs) 2.6 and 8.5 using an intermediate complexity global ecosystem model, Medusa-2.0. The primary impact of future change lies in stratification-led declines in the availability of key nutrients in surface waters, which in turn leads to a global decrease (1990s vs. 2090s) in ocean productivity (-6.3%). This impact has knock-on consequences for the abundances of the low trophic level biogeochemical actors modelled by Medusa-2.0 (-5.8%), and these would be expected to similarly impact higher trophic level elements such as fisheries. Related impacts are found in the flux of organic material to seafloor communities (-40.7% at 1000 m), and in the volume of ocean suboxic zones (+12.5%). A sensitivity analysis removing an acidification feedback on calcification finds that change in this process significantly impacts benthic communities, suggesting that a better understanding of the OA-sensitivity of calcifying organisms, and their role in ballasting sinking organic carbon, may significantly improve forecasting of these ecosystems. For all processes, there is geographical variability in change, and changes are much more pronounced under RCP 8.5 than the RCP 2.6 scenario.

  3. Interaction-induced localization of mobile impurities in ultracold systems

    PubMed Central

    Li, Jian; An, Jin; Ting, C. S.

    2013-01-01

    The impurities, introduced intentionally or accidentally into certain materials, can significantly modify their characteristics or reveal their intrinsic physical properties, and thus play an important role in solid-state physics. Different from those static impurities in a solid, the impurities realized in cold atomic systems are naturally mobile. Here we propose an effective theory for treating some unique behaviors exhibited by ultracold mobile impurities. Our theory reveals the interaction-induced transition between the extended and localized impurity states, and also explains the essential features obtained from several previous models in a unified way. Based on our theory, we predict many intriguing phenomena in ultracold systems associated with the extended and localized impurities, including the formation of the impurity-molecules and impurity-lattices. We hope this investigation can open up a new avenue for the future studies on ultracold mobile impurities. PMID:24192986

  4. Interaction-induced localization of mobile impurities in ultracold systems

    NASA Astrophysics Data System (ADS)

    Li, Jian; An, Jin; Ting, C. S.

    2013-11-01

    The impurities, introduced intentionally or accidentally into certain materials, can significantly modify their characteristics or reveal their intrinsic physical properties, and thus play an important role in solid-state physics. Different from those static impurities in a solid, the impurities realized in cold atomic systems are naturally mobile. Here we propose an effective theory for treating some unique behaviors exhibited by ultracold mobile impurities. Our theory reveals the interaction-induced transition between the extended and localized impurity states, and also explains the essential features obtained from several previous models in a unified way. Based on our theory, we predict many intriguing phenomena in ultracold systems associated with the extended and localized impurities, including the formation of the impurity-molecules and impurity-lattices. We hope this investigation can open up a new avenue for the future studies on ultracold mobile impurities.

  5. Impurity and particle control for INTOR

    SciTech Connect

    Post, D.

    1985-02-01

    The INTOR impurity control system studies have been focused on the development of an impurity control system which would be able to provide the necessary heat removal and He pumping while satisfying the requirements for (1) minimum plasma contamination by impurities, (2) reasonable component lifetime (approx. 1 year), and (3) minimum size and cost. The major systems examined were poloidal divertors and pumped limiters. The poloidal divertor was chosen as the reference option since it offered the possibility of low sputtering rates due to the formation of a cool, dense plasma near the collector plates. Estimates of the sputtering rates associated with pumped limiters indicated that they would be too high for a reasonable system. Development of an engineering design concept was done for both the poloidal divertor and the pumped limiter.

  6. On charged impurity structures in liquid helium

    NASA Astrophysics Data System (ADS)

    Pelmenev, A. A.; Krushinskaya, I. N.; Bykhalo, I. B.; Boltnev, R. E.

    2016-03-01

    The thermoluminescence spectra of impurity-helium condensates (IHC) submerged in superfluid helium have been observed for the first time. Thermoluminescence of impurity-helium condensates submerged in superfluid helium is explained by neutralization reactions occurring in impurity nanoclusters. Optical spectra of excited products of neutralization reactions between nitrogen cations and thermoactivated electrons were rather different from the spectra observed at higher temperatures, when the luminescence due to nitrogen atom recombination dominates. New results on current detection during the IHC destruction are presented. Two different mechanisms of nanocluster charging are proposed to describe the phenomena observed during preparation and warm-up of IHC samples in bulk superfluid helium, and destruction of IHC samples out of liquid helium.

  7. Magnetic impurities in Cu nanocontacts: Kondo effect and conductance from first principles

    NASA Astrophysics Data System (ADS)

    Jacob, David; Haule, Kristjan; Kotliar, Gabriel

    2009-03-01

    We present ab initio calculations of the electronic structure and coherent transport properties of Cu nanocontacts hosting a single magnetic impurity (Fe,Co or Ni) in the contact region. The strong electron correlations of the impurity 3d-electrons are fully taken into account by combining density functional calculations with a dynamical treatment of the impurity 3d-shell in the so called one-crossing approximation. We find that for all three impurities the strong electron correlations give rise to Kondo resonances at the Fermi level which in turn lead to Fano lineshapes in the coherent transport characteristics of the nanocontact. The exact shape of the Kondo and Fano lineshapes, however, depends strongly on the impurity type and the geometry of the contact. This is in agreement with recent experiments measuring the conductance of magnetic impurities on noble metal surfaces [1-4]. [1] P. Wahl et al., Phys. Rev. Lett. 93, 176603 (2004). [2] N. N'eel et al., Phys. Rev. Lett. 98, 016801 (2007). [3] L. Vitali et al., Phys. Rev. Lett. 101, 216802 (2008). [4] N. N'eel et al., arXiv:0810.0236 (2008).

  8. Some aspects of selection of impurities improving photoelectric characteristics of chalcogenide vitreous semiconductors

    SciTech Connect

    Burdiyan, I. I.; Cosiuc, V. V. Pynzar', R. A.

    2008-02-15

    The effect of low concentrations of two groups of doping impurities (one group includes Sn, Pb, Dy, Ho, Y and the other group includes In, Cs, and Al) on photoelectric properties of As{sub 2}Se{sub 3} and (As{sub 2}S{sub 3}){sub 0.3}(As{sub 2}Se{sub 3}){sub 0.7} was investigated. Studies of spectral distributions of photoconductivity and optical absorption showed that there is a distinct increase in photoconductivity if the level of doping with elements of the first group is as high as 0.015%. Elements of the second group of impurities did not exert any significant effect on photoconductivity. The effect of impurities of the first group is attributed to occupation of vacant sites (formed as a result of removal of highly volatile Se and S atoms) by low concentrations of impurity atoms. The observed effect is related to the fact that substitutional atoms can preserve covalent bonds and to the small difference between atomic sizes and electron affinity for doping impurities and S and Se. Atoms of the second group of impurities lack these features.

  9. Theory of the electronic states and absorption spectrum of the LiCl:Ag+ impurity system

    NASA Astrophysics Data System (ADS)

    Jackson, Koblar A.; Lin, Chun C.

    1990-01-01

    The impurity absorption spectra of Ag+ and Cu+ impurities in alkali halide hosts show characteristically different features, despite the similar nature of the corresponding free ions. We use the self-interaction-corrected local-spin-density (SIC-LSD) theory to calculate the electronic structure of the ground state (4d) and the 5s and 5p excited states of the LiCl:Ag+ impurity ion. The method of linear combinations of atomic orbitals is used to determine the wave functions and energy levels. By comparing with previous calculations for LiCl:Cu+, we are able to attribute the differences in the d-->s and d-->p transitions in the ultraviolet spectra of these systems to the increased bonding between host crystal and impurity orbitals in LiCl:Ag+, due to the more extensive nature of the Ag+ 4d orbitals. A modification of the earlier SIC-LSD impurity-crystal procedure is introduced to treat the strongly mixed impurity states.

  10. Impurity profiling of trinitrotoluene using vacuum-outlet gas chromatography-mass spectrometry.

    PubMed

    Brust, Hanneke; Willemse, Sander; Zeng, Tuoyu; van Asten, Arian; Koeberg, Mattijs; van der Heijden, Antoine; Bolck, Annabel; Schoenmakers, Peter

    2014-12-29

    In this work, a reliable and robust vacuum-outlet gas chromatography-mass spectrometry (GC-MS) method is introduced for the identification and quantification of impurities in trinitrotoluene (TNT). Vacuum-outlet GC-MS allows for short analysis times; the analysis of impurities in TNT was performed in 4min. This study shows that impurity profiling of TNT can be used to investigate relations between TNT samples encountered in forensic casework. A wide variety of TNT samples were analyzed with the developed method. Dinitrobenzene, dinitrotoluene, trinitrotoluene and amino-dinitrotoluene isomers were detected at very low levels (<1wt.%) by applying the MS in selected-ion monitoring (SIM) mode. Limits of detection ranged from 6ng/mL for 2,6-dinitrotoluene to 43ng/mL for 4-amino-2,6-dinitrotoluene. Major impurities in TNT were 2,4-dinitrotoluene and 2,3,4-trinitrotoluene. Impurity profiles based on seven compounds showed to be useful to TNT samples from different sources. Statistical analysis of these impurity profiles using likelihood ratios demonstrated the potential to investigate whether two questioned TNT samples encountered in forensic casework are from the same source.

  11. Climate change and ocean acidification impacts on lower trophic levels and the export of organic carbon to the deep ocean

    NASA Astrophysics Data System (ADS)

    Yool, A.; Popova, E. E.; Coward, A. C.; Bernie, D.; Anderson, T. R.

    2013-09-01

    Most future projections forecast significant and ongoing climate change during the 21st century, but with the severity of impacts dependent on efforts to restrain or reorganise human activity to limit carbon dioxide (CO2) emissions. A major sink for atmospheric CO2, and a key source of biological resources, the World Ocean is widely anticipated to undergo profound physical and - via ocean acidification - chemical changes as direct and indirect results of these emissions. Given strong biophysical coupling, the marine biota is also expected to experience strong changes in response to this anthropogenic forcing. Here we examine the large-scale response of ocean biogeochemistry to climate and acidification impacts during the 21st century for Representative Concentration Pathways (RCPs) 2.6 and 8.5 using an intermediate complexity global ecosystem model, MEDUSA-2.0. The primary impact of future change lies in stratification-led declines in the availability of key nutrients in surface waters, which in turn leads to a global decrease (1990s vs. 2090s) in ocean productivity (-6.3%). This impact has knock-on consequences for the abundance of the low trophic level biogeochemical actors modelled by MEDUSA-2.0 (-5.8%), and these would be expected to similarly impact higher trophic level elements such as fisheries. Related impacts are found in the flux of organic material to seafloor communities (-40.7% at 1000 m), and in the volume of ocean suboxic zones (+12.5%). A sensitivity analysis removing an acidification feedback on calcification finds that change in this process significantly impacts benthic communities, suggesting that a~better understanding of the OA-sensitivity of calcifying organisms, and their role in ballasting sinking organic carbon, may significantly improve forecasting of these ecosystems. For all processes, there is geographical variability in change - for instance, productivity declines -21% in the Atlantic and increases +59% in the Arctic - and changes are

  12. Mitigation of Effects of Occlusion on Object Recognition with Deep Neural Networks through Low-Level Image Completion.

    PubMed

    Chandler, Benjamin; Mingolla, Ennio

    2016-01-01

    Heavily occluded objects are more difficult for classification algorithms to identify correctly than unoccluded objects. This effect is rare and thus hard to measure with datasets like ImageNet and PASCAL VOC, however, owing to biases in human-generated image pose selection. We introduce a dataset that emphasizes occlusion and additions to a standard convolutional neural network aimed at increasing invariance to occlusion. An unmodified convolutional neural network trained and tested on the new dataset rapidly degrades to chance-level accuracy as occlusion increases. Training with occluded data slows this decline but still yields poor performance with high occlusion. Integrating novel preprocessing stages to segment the input and inpaint occlusions is an effective mitigation. A convolutional network so modified is nearly as effective with more than 81% of pixels occluded as it is with no occlusion. Such a network is also more accurate on unoccluded images than an otherwise identical network that has been trained with only unoccluded images. These results depend on successful segmentation. The occlusions in our dataset are deliberately easy to segment from the figure and background. Achieving similar results on a more challenging dataset would require finding a method to split figure, background, and occluding pixels in the input. PMID:27340396

  13. Mitigation of Effects of Occlusion on Object Recognition with Deep Neural Networks through Low-Level Image Completion.

    PubMed

    Chandler, Benjamin; Mingolla, Ennio

    2016-01-01

    Heavily occluded objects are more difficult for classification algorithms to identify correctly than unoccluded objects. This effect is rare and thus hard to measure with datasets like ImageNet and PASCAL VOC, however, owing to biases in human-generated image pose selection. We introduce a dataset that emphasizes occlusion and additions to a standard convolutional neural network aimed at increasing invariance to occlusion. An unmodified convolutional neural network trained and tested on the new dataset rapidly degrades to chance-level accuracy as occlusion increases. Training with occluded data slows this decline but still yields poor performance with high occlusion. Integrating novel preprocessing stages to segment the input and inpaint occlusions is an effective mitigation. A convolutional network so modified is nearly as effective with more than 81% of pixels occluded as it is with no occlusion. Such a network is also more accurate on unoccluded images than an otherwise identical network that has been trained with only unoccluded images. These results depend on successful segmentation. The occlusions in our dataset are deliberately easy to segment from the figure and background. Achieving similar results on a more challenging dataset would require finding a method to split figure, background, and occluding pixels in the input.

  14. Mitigation of Effects of Occlusion on Object Recognition with Deep Neural Networks through Low-Level Image Completion

    PubMed Central

    Mingolla, Ennio

    2016-01-01

    Heavily occluded objects are more difficult for classification algorithms to identify correctly than unoccluded objects. This effect is rare and thus hard to measure with datasets like ImageNet and PASCAL VOC, however, owing to biases in human-generated image pose selection. We introduce a dataset that emphasizes occlusion and additions to a standard convolutional neural network aimed at increasing invariance to occlusion. An unmodified convolutional neural network trained and tested on the new dataset rapidly degrades to chance-level accuracy as occlusion increases. Training with occluded data slows this decline but still yields poor performance with high occlusion. Integrating novel preprocessing stages to segment the input and inpaint occlusions is an effective mitigation. A convolutional network so modified is nearly as effective with more than 81% of pixels occluded as it is with no occlusion. Such a network is also more accurate on unoccluded images than an otherwise identical network that has been trained with only unoccluded images. These results depend on successful segmentation. The occlusions in our dataset are deliberately easy to segment from the figure and background. Achieving similar results on a more challenging dataset would require finding a method to split figure, background, and occluding pixels in the input. PMID:27340396

  15. Undercompensated kondo impurity with quantum critical point

    PubMed

    Schlottmann

    2000-02-14

    The low-temperature properties of a magnetic impurity of spin S interacting with an electron gas via anisotropic spin exchange are studied via Bethe's ansatz. For S>1/2 the impurity is only partially compensated at T = 0, leaving an effective spin that is neither integer nor half integer. The entropy has an essential singularity at H = T = 0, and the susceptibility and the specific heat follow power laws of H and T with nonuniversal exponents, which are the consequence of a quantum critical point. The results for the generalization to an arbitrary number of channels are also reported. PMID:11017567

  16. Mapping itinerant electrons around Kondo impurities.

    PubMed

    Prüser, H; Wenderoth, M; Weismann, A; Ulbrich, R G

    2012-04-20

    We investigate single Fe and Co atoms buried below a Cu(100) surface using low temperature scanning tunneling spectroscopy. By mapping the local density of states of the itinerant electrons at the surface, the Kondo resonance near the Fermi energy is analyzed. Probing bulk impurities in this well-defined scattering geometry allows separating the physics of the Kondo system and the measuring process. The line shape of the Kondo signature shows an oscillatory behavior as a function of depth of the impurity as well as a function of lateral distance. The oscillation period along the different directions reveals that the spectral function of the itinerant electrons is anisotropic. PMID:22680744

  17. The physics of Kondo impurities in graphene.

    PubMed

    Fritz, Lars; Vojta, Matthias

    2013-03-01

    This article summarizes our understanding of the Kondo effect in graphene, primarily from a theoretical perspective. We shall describe different ways to create magnetic moments in graphene, either by adatom deposition or via defects. For dilute moments, the theoretical description is in terms of effective Anderson or Kondo impurity models coupled to graphene's Dirac electrons. We shall discuss in detail the physics of these models, including their quantum phase transitions and the effect of carrier doping, and confront this with existing experimental data. Finally, we will point out connections to other quantum impurity problems, e.g., in unconventional superconductors, topological insulators, and quantum spin liquids.

  18. Impurity Crystal in a Bose-Einstein Condensate

    SciTech Connect

    Roberts, David C.; Rica, Sergio

    2009-01-16

    We investigate the behavior of impurity fields immersed in a larger condensate field in various dimensions. We discuss the localization of a single impurity field within a condensate and note the effects of surface energy. We derive the functional form of the attractive condensate-mediated interaction between two impurities. Generalizing the analysis to N impurity fields, we show that within various parameter regimes a crystal of impurity fields can form spontaneously in the condensate. Finally, the system of condensate and crystallized impurity structure is shown to have nonclassical rotational inertia, which is characteristic of superfluidity; i.e., the system can be seen to exhibit supersolid behavior.

  19. An investigation of impurity centers in semiconductors of variable composition. Part 1: General theory and some applications

    NASA Technical Reports Server (NTRS)

    Vonroos, O. H.

    1982-01-01

    A theory of deep point defects imbedded in otherwise perfect semiconductor crystals is developed with the aid of pseudopotentials. The dominant short-range forces engendered by the impurity are sufficiently weakened in all cases where the cancellation theorem of the pseudopotential formalism is operative. Thus, effective-mass-like equations exhibiting local effective potentials derived from nonlocal pseudopotentials are shown to be valid for a large class of defects. A two-band secular determinant for the energy eigenvalues of deep defects is also derived from the set of integral equations which corresponds to the set of differential equations of the effective-mass type. Subsequently, the theory in its simplest form, is applied to the system Al(x)Ga(1-x)As:Se. It is shown that the one-electron donor level of Se within the forbidden gap of Al(x)Ga(1-x)As as a function of the AlAs mole fraction x reaches its maximum of about 300 meV (as measured from the conduction band edge) at the cross-over from the direct to the indirect band-gap at x = 0.44 in agreement with experiments.

  20. The excited state dynamics of KLa(MoO{sub 4}){sub 2}:Pr{sup 3+}: From a case study to the determination of the energy levels of rare earth impurities relative to the bandgap in oxidising host lattices

    SciTech Connect

    Cavalli, Enrico Boutinaud, Philippe; Bettinelli, Marco; Dorenbos, Pieter

    2008-05-15

    The luminescence properties of KLa(MoO{sub 4}){sub 2} (KLM) single crystals doped with Pr{sup 3+} have been measured in the 10-600 K temperature range in order to investigate the mechanisms involved in the radiationless processes. At variance with previously studied scheelite-like molybdates activated with Pr{sup 3+}, no effects attributed to the formation of intervalence charge transfer states have been observed. The model proposed in order to account for this behaviour allows the determination of the energy of the Pr{sup 3+} levels relative to the valence and conduction bands of the host. This model has firstly been confirmed for Tb{sup 3+}-doped KLM, for which suitable experimental data are available, and then extended to the other rare earth ions on the basis of the systematic nature of the lanthanide energy levels properties. The obtained conclusions are finally supported in the light of the comparison with some other representative cases. - Graphical abstract: The study of the excited state dynamics of KLa(MoO{sub 4}){sub 2} single crystals doped with Pr{sup 3+} allows to determine the energies of the levels of the active ion relative to the valence and conduction bands of the host. This model has then been extended to the other rare earth ions on the basis of the systematic nature of the lanthanide energy levels properties.

  1. Ni/YSZ Anode Interactions with Impurities in Coal Gas

    SciTech Connect

    Marina, Olga A.; Pederson, Larry R.; Coyle, Christopher A.; Thomsen, Edwin C.; Coffey, Greg W.

    2009-10-16

    Performance of solid oxide fuel cell (SOFC) with nickel/zirconia anodes on synthetic coal gas in the presence of low levels of phosphorus, arsenic, selenium, sulfur, hydrogen chloride, and antimony impurities were evaluated. The presence of phosphorus and arsenic led to the slow and irreversible SOFC degradation due to the formation of secondary phases with nickel, particularly close to the gas inlet. Phosphorus and antimony surface adsorption layers were identified as well. Hydrogen chloride and sulfur interactions with the nickel were limited to the surface adsorption only, whereas selenium exposure also led to the formation of nickel selenide for highly polarized cells.

  2. Impurity content of reduced-activation ferritic steels and a vanadium alloy

    SciTech Connect

    Klueh, R.L.; Grossbeck, M.L.; Bloom, E.E.

    1997-04-01

    Inductively coupled plasma mass spectrometry was used to analyze a reduced-activation ferritic/martensitic steel and a vanadium alloy for low-level impurities that would compromise the reduced-activation characteristics of these materials. The ferritic steel was from the 5-ton IEA heat of modified F82H, and the vanadium alloy was from a 500-kg heat of V-4Cr-4Ti. To compare techniques for analysis of low concentrations of impurities, the vanadium alloy was also examined by glow discharge mass spectrometry. Two other reduced-activation steels and two commercial ferritic steels were also analyzed to determine the difference in the level of the detrimental impurities in the IEA heat and steels for which no extra effort was made to restrict some of the tramp impurities. Silver, cobalt, molybdenum, and niobium proved to be the tramp impurities of most importance. The levels observed in these two materials produced with present technology exceeded the limits for low activation for either shallow land burial or recycling. The chemical analyses provide a benchmark for the improvement in production technology required to achieve reduced activation; they also provide a set of concentrations for calculating decay characteristics for reduced-activation materials. The results indicate the progress that has been made and give an indication of what must still be done before the reduced-activation criteria can be achieved.

  3. IDENTIFYING IMPURITIES IN SURPLUS NON PIT PLUTONIUM FEEDS FOR MOX OR ALTERNATIVE DISPOSITION

    SciTech Connect

    Allender, J; Moore, E

    2010-07-14

    This report provides a technical basis for estimating the level of corrosion products in materials stored in DOE-STD-3013 containers based on extrapolating available chemical sample results. The primary focus is to estimate the levels of nickel, iron, and chromium impurities in plutonium-bearing materials identified for disposition in the United States Mixed Oxide fuel process.

  4. Pharmaceutical impurities and degradation products: uses and applications of NMR techniques.

    PubMed

    Maggio, Rubén M; Calvo, Natalia L; Vignaduzzo, Silvana E; Kaufman, Teodoro S

    2014-12-01

    Current standards and regulations demand the pharmaceutical industry not only to produce highly pure drug substances, but to achieve a thorough understanding of the impurities accompanying their manufactured drug substances and products. These challenges have become important goals of process chemistry and have steadily stimulated the search of impurities after accelerated or forced degradation procedures. As a result, impurity profiling is one of the most attractive, active and relevant fields of modern pharmaceutical analysis. This activity includes the identification, structural elucidation and quantitative determination of impurities and degradation products in bulk drugs and their pharmaceutical formulations. Nuclear magnetic resonance (NMR) spectroscopy has evolved into an irreplaceable approach for pharmaceutical quality assessment, currently playing a critical role in unequivocal structure identification as well as structural confirmation (qualitative detection), enabling the understanding of the underlying mechanisms of the formation of process and/or degradation impurities. NMR is able to provide qualitative information without the need of standards of the unknown compounds and multiple components can be quantified in a complex sample without previous separation. When coupled to separative techniques, the resulting hyphenated methodologies enhance the analytical power of this spectroscopy to previously unknown levels. As a result, and by enabling the implementation of rational decisions regarding the identity and level of impurities, NMR contributes to the goal of making better and safer medicines. Herein are discussed the applications of NMR spectroscopy and its hyphenated derivate techniques to the study of a wide range pharmaceutical impurities. Details on the advantages and disadvantages of the methodology and well as specific challenges with regards to the different analytical problems are also presented. PMID:24853620

  5. Process and system for removing impurities from a gas

    DOEpatents

    Henningsen, Gunnar; Knowlton, Teddy Merrill; Findlay, John George; Schlather, Jerry Neal; Turk, Brian S

    2014-04-15

    A fluidized reactor system for removing impurities from a gas and an associated process are provided. The system includes a fluidized absorber for contacting a feed gas with a sorbent stream to reduce the impurity content of the feed gas; a fluidized solids regenerator for contacting an impurity loaded sorbent stream with a regeneration gas to reduce the impurity content of the sorbent stream; a first non-mechanical gas seal forming solids transfer device adapted to receive an impurity loaded sorbent stream from the absorber and transport the impurity loaded sorbent stream to the regenerator at a controllable flow rate in response to an aeration gas; and a second non-mechanical gas seal forming solids transfer device adapted to receive a sorbent stream of reduced impurity content from the regenerator and transfer the sorbent stream of reduced impurity content to the absorber without changing the flow rate of the sorbent stream.

  6. In-situ impurity measurements in PDX Edge plasma

    SciTech Connect

    Staib, P.; Dylla, H.F.; Rossnagel, S.M.

    1980-07-01

    The surface analysis station of PDX combines several surface analysis techniques (AES, XPS, SIMS) for in-situ measurement of impurity fluxes in the edge-plasma. The major impurities deposited on a sample surface during nondiverted PDX discharges are oxygen, titanium (limiter material) and chlorine. The impurity fluxes measured at different radial positions decreased by a factor of ten from the plasma edge to the wall. The sample surface collecting the impurity ions is located behind a circular aperture. The observed broadening of the deposition profile of Ti relative to the aperture diameter enables an estimate to be made of the ratio of charge state/energy of Ti ions in the edge plasma. Time-resolved analyses of the deposited impurities are presented which indicate that the time behavior for various impurities may be quite different for different impurity species. This aspect is discussed in relation to probable impurity release mechanisms.

  7. Coseismic and aseismic deformations of the rock mass around deep level mining in South Africa - Joint South African and Japanese study

    NASA Astrophysics Data System (ADS)

    Milev, A. M.; Yabe, Y.; Naoi, M. M.; Nakatani, M.; Durrheim, R. J.; Ogasawara, H.; Scholz, C. H.

    2010-12-01

    Two underground sites in a deep level gold mine in South Africa were instrumented by the Council for Scientific and Industrial Research (CSIR) with tilt meters and seismic monitors. One of the sites was also instrumented by JApanese-German Underground Acoustic emission Research in South Africa (JAGUARS) with a small network, approx. 40 m span, of eight Acoustic Emission (AE) sensors. The rate of tilt, defined as quasi-static deformations, and the seismic ground motion, defined as dynamic deformations, were analysed in order to understand the rock mass behavior around deep level mining. In addition the high frequency AE events recorded at hypocentral distances of about 50m were analysed. This was the first implementation of high frequency AE events at such a great depth (3300m below the surface). A good correspondence between the dynamic and quasi-static deformations was found. The rate of coseismic and aseismic tilt, as well as seismicity recorded by the mine seismic network, are approximately constant until the daily blasting time, which takes place from about 19:30 until shortly before 21:00. During the blasting time and the subsequent seismic events the coseismic and aseismic tilt shows a rapid increase indicated by a rapid change of the tilt during the seismic event. Much of the quasi-static deformation, however, occurs independently of the seismic events and was described as ‘slow’ or aseismic events. During the monitoring period a seismic event with MW 1.9 (2.1) occurred in the vicinity of the instrumented site. This event was recorded by both the CSIR integrated monitoring system and JAGUARS acoustic emotion network. The tilt changes associated with this event showed a well pronounced after-tilt. More than 21,000 AE aftershocks were located in the first 150 hours after the main event. Using the distribution of the AE events the position of the fault in the source area was successfully delineated. The distribution of the AE events following the main shock

  8. The Potts model on a Bethe lattice with nonmagnetic impurities

    SciTech Connect

    Semkin, S. V. Smagin, V. P.

    2015-10-15

    We have obtained a solution for the Potts model on a Bethe lattice with mobile nonmagnetic impurities. A method is proposed for constructing a “pseudochaotic” impurity distribution by a vanishing correlation in the arrangement of impurity atoms for the nearest sites. For a pseudochaotic impurity distribution, we obtained the phase-transition temperature, magnetization, and spontaneous magnetization jumps at the phase-transition temperature.

  9. Human adipocytes from the subcutaneous superficial layer have greater adipogenic potential and lower PPAR-γ DNA methylation levels than deep layer adipocytes.

    PubMed

    Kosaka, Kentaro; Kubota, Yoshitaka; Adachi, Naoki; Akita, Shinsuke; Sasahara, Yoshitaro; Kira, Tomoe; Kuroda, Masayuki; Mitsukawa, Nobuyuki; Bujo, Hideaki; Satoh, Kaneshige

    2016-08-01

    Human subcutaneous fat tissue consists of two layers, superficial adipose tissue (SAT) and deep adipose tissue (DAT). Some recent reports suggest that a disproportionate accumulation of DAT is related to obesity-associated metabolic complications. However, the differences in adipocyte function between SAT and DAT are unclear. To clarify the differences in human adipocyte characteristics between SAT and DAT, human ceiling culture-derived proliferative adipocytes (ccdPAs) were primary cultured from SAT and DAT of three lean female patients. Differences in adipogenic differentiation potential and sensitivity to exogenous adipogenic factors were examined. Epigenetic modification of the CpG island DNA methylation levels of genes related to adipogenesis was measured. In histological analyses, the mean adipocyte size in SAT was significantly larger than that in DAT (8,741 ± 416 vs. 7,732 ± 213 μm(2), P < 0.05). Primary cultured adipocytes from SAT showed significantly greater adipogenesis than did those of DAT. Sensitivity to partial adipogenic stimulation was significantly different between ccdPAs of SAT and DAT. Peroxisome proliferator-activated receptor-γ (PPAR-γ) protein expression and leptin protein secretion from ccdPAs were significantly higher in SAT than DAT. DNA methylation levels of PPAR-γ were significantly lower in ccdPAs of SAT than DAT. Adipocyte size was larger in SAT than DAT in vivo. This is consistent with the findings of an in vitro study that, compared with ccdPAs in DAT, ccdPAs in SAT have higher adipogenic potential and lower DNA methylation levels of PPAR-γ. PMID:27251439

  10. Metal-based impurities in graphenes: application for electroanalysis.

    PubMed

    Chee, Sze Yin; Pumera, Martin

    2012-05-01

    We show here that metallic impurities presented in graphenes prepared from graphite can be usefully employed for electroanalysis. We demonstrate that cumene hydroperoxide electrochemical reduction on graphene containing iron-based impurities provides significantly larger voltammetric currents than the same experiment using iron oxide nanoparticles. This opens doors for turning metallic impurities into potentially useful components of graphene based electrochemical systems.

  11. Monte Carlo method for magnetic impurities in metals

    NASA Technical Reports Server (NTRS)

    Hirsch, J. E.; Fye, R. M.

    1986-01-01

    The paper discusses a Monte Carlo algorithm to study properties of dilute magnetic alloys; the method can treat a small number of magnetic impurities interacting wiith the conduction electrons in a metal. Results for the susceptibility of a single Anderson impurity in the symmetric case show the expected universal behavior at low temperatures. Some results for two Anderson impurities are also discussed.

  12. Impurity enrichment and radiative enhancement using induced SOL flow in DIII-D

    SciTech Connect

    Wade, M.R.; West, W.P.; Wood, R.D.

    1998-07-01

    Experiments on DIII-D have demonstrated the efficacy of using induced scrap-off-layer (SOL) flow to preferentially enrich impurities in the divertor plasma. This SOL floe is produced through simultaneous deuterium gas injection at the midplane and divertor exhaust. Using this SOL flow, an improvement in enrichment (defined as the ratio of impurity fraction in the divertor to that in the plasma core) has been observed for all impurities in trace-level experiments (i.e., impurity level is non-perturbative), with the degree of improvement increasing with impurity atomic number. In the case of argon, exhaust gas enrichment using modest SOL flow is as high as 17. Using this induced SOL flow technique and argon injection, radiative plasmas have been produced that combine high radiation losses (P{sub rad}/P{sub input} > 70%), low core fuel dilution (Z{sub eff} < 1.9), and good core confinement ({tau}{sub E} > 1.0 {tau}{sub E,ITER93H}).

  13. Impact of Pharmaceutical Impurities in Ecstasy Tablets: Gas Chromatography-Mass Spectrometry Study.

    PubMed

    Jalali, Amir; Hatamie, Amir; Saferpour, Tahere; Khajeamiri, Alireza; Safa, Tahere; Buazar, Foad

    2016-01-01

    In this study, a simple and reliable method by gas chromatograph-mass spectrometry (GC-MS) was developed for the fast and regular identification of 3, 4-MDMA impurities in ecstasy tablets. In so doing, 8 samples of impurities were extracted by diethyl ether under alkaline condition and then analyzed by GC-MS. The results revealed high MDMA levels ranging from 37.6% to 57.7%. The GC-MS method showed that unambiguous identification can be achieved for MDMA from 3, 4-methylenedioxyamphetamine (MDA), Amphetamine (AM), methamphetamine (MA) and ketamine (Keta) compounds, respectively. The experimental results indicated the acceptable time window without interfering peaks. It is found that GC-MS was provided a suitable and rapid identification approach for MDMA (Ecstacy) tablets, particularly in the Forensic labs. Consequently, the intense MDMA levels would support the police to develop a simple quantification of impurity in Ecstasy tablets. PMID:27610162

  14. Impact of Pharmaceutical Impurities in Ecstasy Tablets: Gas Chromatography-Mass Spectrometry Study

    PubMed Central

    Jalali, Amir; Hatamie, Amir; Saferpour, Tahere; Khajeamiri, Alireza; Safa, Tahere; Buazar, Foad

    2016-01-01

    In this study, a simple and reliable method by gas chromatograph–mass spectrometry (GC–MS) was developed for the fast and regular identification of 3, 4-MDMA impurities in ecstasy tablets. In so doing, 8 samples of impurities were extracted by diethyl ether under alkaline condition and then analyzed by GC–MS. The results revealed high MDMA levels ranging from 37.6% to 57.7%. The GC-MS method showed that unambiguous identification can be achieved for MDMA from 3, 4-methylenedioxyamphetamine (MDA), Amphetamine (AM), methamphetamine (MA) and ketamine (Keta) compounds, respectively. The experimental results indicated the acceptable time window without interfering peaks. It is found that GC-MS was provided a suitable and rapid identification approach for MDMA (Ecstacy) tablets, particularly in the Forensic labs. Consequently, the intense MDMA levels would support the police to develop a simple quantification of impurity in Ecstasy tablets. PMID:27610162

  15. Effect of enzyme impurities on phenol removal by the method of polymerization and precipitation catalyzed by Coprinus cinereus peroxidase.

    PubMed

    Masuda, M; Sakurai, A; Sakakibara, M

    2001-11-01

    The removal of phenol by peroxidase-catalyzed polymerization was examined using the Coprinus cinereus peroxidases at different levels of impurity with respect to contamination. The phenol removal efficiency was improved by lowering the peroxidase purity. Acidic and high molecular weight proteins present as impurities in the peroxidase solution had some positive effect on the phenol-polymerizing reaction. The residual enzyme activity, either only in the solution or both in the solution and on the precipitate during the polymerizing reaction, was measured. The results indicate that the main effect of impurities in the peroxidase solution was the suppression of the adsorption of peroxidase molecules on the polymerized precipitate.

  16. Hydrophilic Conjugated Polymers with Large Bandgaps and Deep-Lying HOMO Levels as an Efficient Cathode Interlayer in Inverted Polymer Solar Cells.

    PubMed

    Kan, Yuanyuan; Zhu, Yongxiang; Liu, Zhulin; Zhang, Lianjie; Chen, Junwu; Cao, Yong

    2015-08-01

    Two hydrophilic conjugated polymers, PmP-NOH and PmP36F-NOH, with polar diethanol-amine on the side chains and main chain structures of poly(meta-phenylene) and poly(meta-phenylene-alt-3,6-fluorene), respectively, are successfully synthesized. The films of PmP-NOH and PmP36F-NOH show absorption edges at 340 and 343 nm, respectively. The calculated optical bandgaps of the two polymers are 3.65 and 3.62 eV, respectively, the largest ones so far reported for hydrophilic conjugated polymers. PmP-NOH and PmP36F-NOH also possess deep-lying highest occupied molecular orbital levels of -6.19 and -6.15 eV, respectively. Inserting PmP-NOH and PmP36F-NOH as a cathode interlayer in inverted polymer solar cells with a PTB7/PC71 BM blend as the active layer, high power conversion efficiencies of 8.58% and 8.33%, respectively, are achieved, demonstrating that the two hydrophilic polymers are excellent interlayers for efficient inverted polymer solar cells.

  17. Overview of Ontario Power Generation's Proposed Deep Geologic Repository for Low and Intermediate Level Waste at the Bruce Site, Ontario, Canada

    SciTech Connect

    Gierszewski, P.

    2008-07-01

    A Deep Geologic Repository (DGR) for the long-term management of Low and Intermediate Level Radioactive Waste is being proposed by Ontario Power Generation at the Bruce site near Kincardine, Ontario. The DGR would be located at a depth of approximately 680 m within a 200 m thick layer of low-permeability Ordovician argillaceous limestone, which is below a 200 m layer of low permeability Ordovician shale. The repository would have the capacity for approximately 200,000 m{sup 3} of as-disposed waste, sufficient for the current fleet of 20 OPG-owned nuclear reactors. The purpose of this paper is to provide a summary of the project. In summary: Site-specific studies to confirm the suitability of the site to host the DGR were initiated in 2006. These studies include site characterization, environmental assessment, facility engineering and safety assessment. The preliminary results of this work, which is ongoing, continue to confirm our expectations that the site is suitable. (authors)

  18. Earth system modelling on system-level heterogeneous architectures: EMAC (version 2.42) on the Dynamical Exascale Entry Platform (DEEP)

    NASA Astrophysics Data System (ADS)

    Christou, Michalis; Christoudias, Theodoros; Morillo, Julián; Alvarez, Damian; Merx, Hendrik

    2016-09-01

    We examine an alternative approach to heterogeneous cluster-computing in the many-core era for Earth system models, using the European Centre for Medium-Range Weather Forecasts Hamburg (ECHAM)/Modular Earth Submodel System (MESSy) Atmospheric Chemistry (EMAC) model as a pilot application on the Dynamical Exascale Entry Platform (DEEP). A set of autonomous coprocessors interconnected together, called Booster, complements a conventional HPC Cluster and increases its computing performance, offering extra flexibility to expose multiple levels of parallelism and achieve better scalability. The EMAC model atmospheric chemistry code (Module Efficiently Calculating the Chemistry of the Atmosphere (MECCA)) was taskified with an offload mechanism implemented using OmpSs directives. The model was ported to the MareNostrum 3 supercomputer to allow testing with Intel Xeon Phi accelerators on a production-size machine. The changes proposed in this paper are expected to contribute to the eventual adoption of Cluster-Booster division and Many Integrated Core (MIC) accelerated architectures in presently available implementations of Earth system models, towards exploiting the potential of a fully Exascale-capable platform.

  19. Protein Crystal Growth Dynamics and Impurity Incorporation

    NASA Technical Reports Server (NTRS)

    Chernov, Alex A.; Thomas, Bill

    2000-01-01

    The general concepts and theories of crystal growth are proven to work for biomolecular crystallization. This allowed us to extract basic parameters controlling growth kinetics - free surface energy, alpha, and kinetic coefficient, beta, for steps. Surface energy per molecular site in thermal units, alpha(omega)(sup 2/3)/kT approx. = 1, is close to the one for inorganic crystals in solution (omega is the specific molecular volume, T is the temperature). Entropic restrictions on incorporation of biomolecules into the lattice reduce the incorporation rate, beta, by a factor of 10(exp 2) - 10(exp 3) relative to inorganic crystals. A dehydration barrier of approx. 18kcal/mol may explain approx. 10(exp -6) times difference between frequencies of adding a molecule to the lattice and Brownian attempts to do so. The latter was obtained from AFM measurements of step and kink growth rates on orthorhombic lysozyme. Protein and many inorganic crystals typically do not belong to the Kossel type, thus requiring a theory to account for inequivalent molecular positions within its unit cell. Orthorhombic lysozyme will serve as an example of how to develop such a theory. Factors deteriorating crystal quality - stress and strain, mosaicity, molecular disorder - will be reviewed with emphasis on impurities. Dimers in ferritin and lysozyme and acetylated lysozyme, are microheterogeneous i.e. nearly isomorphic impurities that are shown to be preferentially trapped by tetragonal lysozyme and ferritin crystals, respectively. The distribution coefficient, K defined as a ratio of the (impurity/protein) ratios in crystal and in solution is a measure of trapping. For acetylated lysoyzme, K = 2.15 or, 3.42 for differently acetylated forms, is independent of both the impurity and the crystallizing protein concentration. The reason is that impurity flux to the surface is constant while the growth rate rises with supersaturation. About 3 times lower dimer concentration in space grown ferritin and

  20. Effect of cerium and impurities on fatigue and fracture properties of 8090 alloy sheets

    SciTech Connect

    Meng Liang; Zheng Xiulin

    1995-07-01

    The objective of the present study is to examine the effect of a rare earth addition, Ce, and some impurities, Fe, Si, Na and K, on the fatigue and fracture properties of 8090 Al-Li alloy sheet by means of the determinations for the fatigue life (N{sub f}) under a constant stress amplitude, fatigue crack propagation (FCP) rates and plane stress fracture toughness. Impurity Fe and Si in 8090 alloy sheets increase the fatigue crack propagation rates and impair the fracture properties although they could not bring about significant effect on the fatigue life under the test conditions maximum cyclic stress of 280 MPa, load ratio of 0.1 and Fe + Si content of 0.24%. Impurity Na and K in 8090 alloy sheets reduce the fracture properties and fatigue life. When the level stress intensity factor is higher, or {Delta} K>10{sup 1.1} Mpam{sup 1/2} in the test, Na and K markedly increase the fatigue crack propagation rates. Ce addition in 8090 alloy sheets containing a certain amount of Fe and Si impurities could suppress the effects of Na and K impurities on the fracture behavior. Adding about 0.28% Ce in 8090 alloy containing trace Fe and Si impurities improves the crack propagation resistance and plane stress fracture toughness. However, adding Ce from 0.10% to 0.29% is unprofitable to the fatigue life of 8090 alloy containing more impurities. There are more and coarser Ce-containing compound particles in the alloy sheets with high Ce content. These particles could produce a detrimental effect on the fatigue properties.

  1. Evaluation of Impurity Extremes in a Plutonium-loaded Borosilicate Glass

    SciTech Connect

    Fox, K.M.; Crawford, C.L.; Marra, J.C.; Bibler, N.E.; Hoffman, E.N.; Edwards, T.B.

    2008-07-01

    A vitrification technology utilizing a lanthanide borosilicate (LaBS) glass appears to be a viable option for the disposition of excess weapons-usable plutonium that is not suitable for processing into mixed oxide (MOX) fuel. A significant effort to develop a glass formulation and vitrification process to immobilize plutonium was completed in the mid-1990's. The LaBS glass formulation was found to be capable of immobilizing in excess of 10 wt % Pu and to be tolerant of a range of impurities. To confirm the results of previous testing with surrogate Pu feeds containing impurities, four glass compositions were selected for fabrication with actual plutonium oxide and impurities. The four compositions represented extremes in impurity type and concentration. The homogeneity and durability of these four compositions were measured. The homogeneity of the glasses was evaluated using x-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS). The XRD results indicated that the glasses were amorphous with no evidence of crystalline species in the glass. The SEM/EDS analyses did show the presence of some undissolved PuO{sub 2} material. The EDS spectra indicated that some of the PuO{sub 2} crystals also contained hafnium oxide. The SEM/EDS analyses showed that there were no heterogeneities in the glass due to the feed impurities. The durability of the glasses was measured using the Product Consistency Test (PCT). The PCT results indicated that the durability of Pu impurity glasses was comparable with Pu glasses without impurities and significantly more durable than the Environmental Assessment (EA) glass used as the benchmark for repository disposition of high-level waste (HLW) glasses. (authors)

  2. EVALUATION OF IMPURITY EXTREMES IN A PLUTONIUM-LOADED BOROSILICATE GLASS

    SciTech Connect

    Marra, J; Kevin Fox, K; Charles Crawford, C; Ned Bibler, N; Elizabeth Hoffman, E; Tommy Edwards, T

    2007-11-12

    A vitrification technology utilizing a lanthanide borosilicate (LaBS) glass appears to be a viable option for the disposition of excess weapons-useable plutonium that is not suitable for processing into mixed oxide (MOX) fuel. A significant effort to develop a glass formulation and vitrification process to immobilize plutonium was completed in the mid-1990s. The LaBS glass formulation was found to be capable of immobilizing in excess of 10 wt % Pu and to be tolerant of a range of impurities. To confirm the results of previous testing with surrogate Pu feeds containing impurities, four glass compositions were selected for fabrication with actual plutonium oxide and impurities. The four compositions represented extremes in impurity type and concentration. The homogeneity and durability of these four compositions were measured. The homogeneity of the glasses was evaluated using x-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS). The XRD results indicated that the glasses were amorphous with no evidence of crystalline species in the glass. The SEM/EDS analyses did show the presence of some undissolved PuO{sub 2} material. The EDS spectra indicated that some of the PuO{sub 2} crystals also contained hafnium oxide. The SEM/EDS analyses showed that there were no heterogeneities in the glass due to the feed impurities. The durability of the glasses was measured using the Product Consistency Test (PCT). The PCT results indicated that the durability of Pu impurity glasses was comparable with Pu glasses without impurities and significantly more durable than the Environmental Assessment (EA) glass used as the benchmark for repository disposition of high-level waste (HLW) glasses.

  3. The development of a potassium-sulfide glass fiber cell and studies on impurities in alkali metal-sulfur cells

    NASA Technical Reports Server (NTRS)

    Tsang, F. Y.

    1977-01-01

    Potassium sulfur rechargeable cells, having as the electrolyte the thin walls of hollow glass fibers made from permeable glass, were developed. The cells had short lives, probably due to the construction materials and impurities in the potassium. The effect of the impurities in the analogous NA-S system was studied. Calcium, potassium, and NaOH/oxide impurities caused increased resistance or corrosion of the glass fibers. For long lived cell operation, the Na must contain less than 1 ppm Ca and less than a few ppm of hydroxide/oxide. Up to 150 ppm K can be tolerated. After purification of the Na anolyte, cell lifetimes in excess of 1000 deep charge-discharge cycles or over 8 months on continuous cycling at 10-30 percent depth of discharge were obtained.

  4. Quantification of active pharmaceutical ingredient and impurities in sildenafil citrate obtained from the Internet

    PubMed Central

    Nutan, Mohammad T.; Dodla, Uday Krishna Reddy

    2014-01-01

    Background: The accessibility of prescription drugs produced outside of the United States, most notably sildenafil citrate (innovator product, Viagra®), has been made much easier by the Internet. Of greatest concern to clinicians and policymakers is product quality and patient safety. The US Food and Drug Administration (FDA) has issued warnings to potential buyers that the safety of drugs purchased from the Internet cannot be guaranteed, and may present a health risk to consumers from substandard products. Objective: The objective of this study was to determine whether generic sildenafil citrate tablets from international markets obtained via the Internet are equivalent to the US innovator product regarding major aspects of pharmaceutical quality: potency, accuracy of labeling, and presence and level of impurities. This will help identify aspects of drug quality that may impact public health risks. Methods: A total of 15 sildenafil citrate tablets were obtained for pharmaceutical analysis: 14 generic samples from international Internet pharmacy websites and the US innovator product. According to US Pharmacopeial guidelines, tablet samples were tested using high-performance liquid chromatography for potency of active pharmaceutical ingredient (API) and levels of impurities (impurities A, B, C, and D). Impurity levels were compared with International Conference on Harmonisation (ICH) limits. Results: Among the 15 samples, 4 samples possessed higher impurity B levels than the ICH qualification threshold, 8 samples possessed higher impurity C levels than the ICH qualification threshold, and 4 samples possessed more than 1% impurity quantity of maximum daily dose (MDD). For API, 6 of the samples failed to fall within the 5% assay limit. Conclusions: Quality assurance tests are often used to detect formulation defects of drug products during the manufacturing and/or storage process. Results suggest that manufacturing standards for sildenafil citrate generic drug

  5. When small is big: the role of impurities in electrocatalysis.

    SciTech Connect

    Strmcnik, Dusan; Li, Dongguo; Lopes, Pietro P.; Tripkovic, Dusan; Kodama, Kensaku; Stamenkovic, Vojislav R.; Markovic, Nenad M.

    2015-11-01

    Improvements in the fundamental understanding of electrocatalysis have started to revolutionize the development of electrochemical interfaces for the efficient conversion of chemical energy into electricity, as well as for the utilization of electrons to produce new chemicals that then can be re-used in energy conversion systems. Here, some facets of the role of trace level of impurities (from 10-7 to 10-6 M) in electrocatalysis of the oxygen reduction reaction, hydrogen oxidation and evolution reactions, and CO oxidation reactions are explored on well-characterized platinum single crystal surfaces and high surface area materials in alkaline and acidic environments. Of particular interest is the effect of anions (e.g., Cl-, NO3-) and cations (i.e., Cu2+) present in the supporting electrolytes as well as surface defects (i.e., ad-islands) that are present on metal surfaces. The examples presented are chosen to demonstrate that a small level of impurities may play a crucial role in governing the reactivity of electrochemical interfaces.

  6. Recent advances in trace analysis of pharmaceutical genotoxic impurities.

    PubMed

    Liu, David Q; Sun, Mingjiang; Kord, Alireza S

    2010-04-01

    Genotoxic impurities (GTIs) in pharmaceuticals at trace levels are of increasing concerns to both pharmaceutical industries and regulatory agencies due to their potentials for human carcinogenesis. Determination of these impurities at ppm levels requires highly sensitive analytical methodologies, which poses tremendous challenges on analytical communities in pharmaceutical R&D. Practical guidance with respect to the analytical determination of diverse classes of GTIs is currently lacking in the literature. This article provides an industrial perspective with regard to the analysis of various structural classes of GTIs that are commonly encountered during chemical development. The recent literatures will be reviewed, and several practical approaches for enhancing analyte detectability developed in recent years will be highlighted. As such, this article is organized into the following main sections: (1) trace analysis toolbox including sample introduction, separation, and detection techniques, as well as several 'general' approaches for enhancing detectability; (2) method development: chemical structure and property-based approaches; (3) method validation considerations; and (4) testing and control strategies in process chemistry. The general approaches for enhancing detection sensitivity to be discussed include chemical derivatization, 'matrix deactivation', and 'coordination ion spray-mass spectrometry'. Leveraging the use of these general approaches in method development greatly facilitates the analysis of poorly detectable or unstable/reactive GTIs. It is the authors' intent to provide a contemporary perspective on method development and validation that can guide analytical scientists in the pharmaceutical industries. PMID:20022442

  7. Electrical properties of grain boundaries and dislocations in crystalline silicon: Influence of impurity incorporation and hydrogenation

    NASA Astrophysics Data System (ADS)

    Park, Yongkook

    potential energy barrier in thermal equilibrium was reduced by 70 meV. Whereas the clean sample had a density of GB states of ˜6x1012 cm-2eV-1 in the range of Ev+0.54˜0.64 eV, hydrogenation reduced the density of GB states to ˜9x1011 cm-2eV -1 in the range of Ev+0.56˜0.61 eV, which is about a seven-fold reduction from that of the clean sample. Segregation and thermal dissociation kinetics of hydrogen at a large-angle general GB in crystalline silicon have been investigated using deuterium as a readily identifiable isotope which duplicates hydrogen chemistry. Segregation or trapping of deuterium (hydrogen) introduced was found to take place at (110)/(001) Si GB. The segregation coefficient (k) of deuterium (hydrogen) at GB was determined as k≈24+/-3 at 100°C. Thermal dissociation of deuterium (hydrogen) from GB obeyed first-order kinetics with an activation energy of ˜1.62 eV. The electrical activities of dislocations in a SiGe/Si heterostructure were examined by deep level transient spectroscopy (DLTS) after iron contamination and phosphorous diffusion gettering. DLTS of iron contaminated samples revealed a peak at 210 K, which was assigned to individual iron atoms or very small (<2 nm) precipitates decorated along dislocations. Arrhenius plot of the 210 K peak yielded a hole capture cross section of 2.4x10-14 cm2 and an energy level of 0.42 eV above the valance band. DLTS of the iron contaminated sample revealed that 6x10 14 cm-3 of boron can more effectively trap interstitial iron at room temperature than the strain field/defect sites at 107 ˜108 cm-2 dislocations. Phosphorous diffusion experiments revealed that the gettering efficiency of iron impurities depends on the dislocation density. For regions of high dislocation density, phosphorous diffusion cannot remove all iron impurities decorated at dislocations, suggesting a strong binding of iron impurities at dislocation core defects.

  8. Potential interactions between different levels of cosmic radiation and their influence on the assessment of radiation risk during a manned deep space mission

    NASA Astrophysics Data System (ADS)

    Mortazavi, S.

    Despite the fact that galactic cosmic rays is believed to be isotropic throughout interstellar space, solar flares and coronal mass ejections can produce sudden and dramatic increase in flux of particles and expose the astronauts to transient high levels of ionizing radiation Furthermore, astronauts receive extra doses in the course of their extravehicular activities. It has been estimated that exposure to unpredictable extremely large solar particle events would kill the astronauts without massive shielding in interplanetary space. It is also generally believed that the biological effects of small doses of ionizing radiation may lie below the detection limits. However, potential interactions between a small dose and a subsequent high dose are still a black box that its output may be much different from the effect of a high dose alone. Potential interactions from low and high doses can either be a simple additivity, adaptive responses or synergistic effects. Significant adaptive response has been demonstrated in humans after exposure to high levels of natural radiation. Furthermore, non-linear behavior has been observed for cosmic radiation. Recent long-term follow-up studies as well as studies performed on twins show that in contrast to early reports, the type of interaction is determined by intrinsic factors such as genetic constitution of each individual. Despite that these responses for low- LET radiations (mainly photons and beta particles) are documented to some extent, there are no data on possible interactions of high-energy protons or high-LET heavy ions. The assessment of potential interactions between chronic low doses and acute high doses of high energy protons and heavy ions will be of importance in practical radiation protection of cosmonauts during a deep space mission.

  9. Power Radiated from ITER and CIT by Impurities

    DOE R&D Accomplishments Database

    Cummings, J.; Cohen, S. A.; Hulse, R.; Post, D. E.; Redi, M. H.; Perkins, J.

    1990-07-01

    The MIST code has been used to model impurity radiation from the edge and core plasmas in ITER and CIT. A broad range of parameters have been varied, including Z{sub eff}, impurity species, impurity transport coefficients, and plasma temperature and density profiles, especially at the edge. For a set of these parameters representative of the baseline ITER ignition scenario, it is seen that impurity radiation, which is produced in roughly equal amounts by the edge and core regions, can make a major improvement in divertor operation without compromising core energy confinement. Scalings of impurity radiation with atomic number and machine size are also discussed.

  10. Impurities in Bose-Einstein Condensates: From Polaron to Soliton.

    PubMed

    Shadkhoo, Shahriar; Bruinsma, Robijn

    2015-09-25

    We propose that impurities in a Bose-Einstein condensate which is coupled to a transversely laser-pumped multimode cavity form an experimentally accessible and analytically tractable model system for the study of impurities solvated in correlated liquids and the breakdown of linear-response theory [corrected]. As the strength of the coupling constant between the impurity and the Bose-Einstein condensate is increased, which is possible through Feshbach resonance methods, the impurity passes from a large to a small polaron state, and then to an impurity-soliton state. This last transition marks the breakdown of linear-response theory.

  11. Power radiated from ITER and CIT by impurities

    SciTech Connect

    Cummings, J.; Cohen, S.A.; Hulse, R.; Post, D.E.; Redi, M.H.; Perkins, J.

    1990-07-01

    The MIST code has been used to model impurity radiation from the edge and core plasmas in ITER and CIT. A broad range of parameters have been varied, including Z{sub eff}, impurity species, impurity transport coefficients, and plasma temperature and density profiles, especially at the edge. For a set of these parameters representative of the baseline ITER ignition scenario, it is seen that impurity radiation, which is produced in roughly equal amounts by the edge and core regions, can make a major improvement in divertor operation without compromising core energy confinement. Scalings of impurity radiation with atomic number and machine size are also discussed. 22 refs., 16 figs.

  12. Characterization of space charge layer deep defects in n+-CdS/p-CdTe solar cells by temperature dependent capacitance spectroscopy

    NASA Astrophysics Data System (ADS)

    Kharangarh, P. R.; Misra, D.; Georgiou, G. E.; Chin, K. K.

    2013-04-01

    Temperature Dependent Capacitance Spectroscopy (TDCS) was used to identify carrier trapping defects in thin film n+-CdS/p-CdTe solar cells, made with evaporated Cu as a primary back contact. By investigating the reverse bias junction capacitance, TDCS allows to identify the energy levels of depletion layer defects. The trap energy levels and trap concentrations were derived from temperature-dependent capacitance spectra. Three distinct deep level traps were observed from the high-temperature (T > 300 K) TDCS due to the ionization of impurity centers located in the depletion region of n+-CdS/p-CdTe junction. The observed levels were also reported by other characterization techniques. TDCS seems to be a much simpler characterization technique for accurate evaluation of deep defects in n+-CdS/p-CdTe solar cells.

  13. Spin pumping through magnetic impurity effect

    NASA Astrophysics Data System (ADS)

    Deng, Wei-Yin; Sheng, Li; Xing, Ding-Yu

    2015-08-01

    We propose a simple adiabatic quantum spin pump to generate pure spin current. The spin pump is driven by an ac gate voltage and a time-dependent magnetic impurity potential. It is found that the total pumped spin per cycle exhibits oscillations, whose magnitude decays exponentially with changing strength of the impurity potential. The proposed method may be useful for spintronic applications. Project supported by the State Key Program for Basic Research of China (Grant Nos. 2015CB921202, 2014CB921103, 2011CB922103, and 2010CB923400), the National Natural Science Foundation of China (Grant Nos. 11225420, 11174125, and 91021003), and the Priority Academic Program Development of Jiangsu Higher Education Institutions.

  14. Bound States in Boson Impurity Models

    NASA Astrophysics Data System (ADS)

    Shi, Tao; Wu, Ying-Hai; González-Tudela, A.; Cirac, J. I.

    2016-04-01

    The formation of bound states involving multiple particles underlies many interesting quantum physical phenomena, such as Efimov physics or superconductivity. In this work, we show the existence of an infinite number of such states for some boson impurity models. They describe free bosons coupled to an impurity and include some of the most representative models in quantum optics. We also propose a family of wave functions to describe the bound states and verify that it accurately characterizes all parameter regimes by comparing its predictions with exact numerical calculations for a one-dimensional tight-binding Hamiltonian. For that model, we also analyze the nature of the bound states by studying the scaling relations of physical quantities, such as the ground-state energy and localization length, and find a nonanalytical behavior as a function of the coupling strength. Finally, we discuss how to test our theoretical predictions in experimental platforms, such as photonic crystal structures and cold atoms in optical lattices.

  15. Estimated Tissue and Blood N(2) Levels and Risk of Decompression Sickness in Deep-, Intermediate-, and Shallow-Diving Toothed Whales during Exposure to Naval Sonar.

    PubMed

    Kvadsheim, P H; Miller, P J O; Tyack, P L; Sivle, L D; Lam, F P A; Fahlman, A

    2012-01-01

    Naval sonar has been accused of causing whale stranding by a mechanism which increases formation of tissue N(2) gas bubbles. Increased tissue and blood N(2) levels, and thereby increased risk of decompression sickness (DCS), is thought to result from changes in behavior or physiological responses during diving. Previous theoretical studies have used hypothetical sonar-induced changes in both behavior and physiology to model blood and tissue N(2) tension [Formula: see text], but this is the first attempt to estimate the changes during actual behavioral responses to sonar. We used an existing mathematical model to estimate blood and tissue N(2) tension [Formula: see text] from dive data recorded from sperm, killer, long-finned pilot, Blainville's beaked, and Cuvier's beaked whales before and during exposure to Low- (1-2 kHz) and Mid- (2-7 kHz) frequency active sonar. Our objectives were: (1) to determine if differences in dive behavior affects risk of bubble formation, and if (2) behavioral- or (3) physiological responses to sonar are plausible risk factors. Our results suggest that all species have natural high N(2) levels, with deep diving generally resulting in higher end-dive [Formula: see text] as compared with shallow diving. Sonar exposure caused some changes in dive behavior in both killer whales, pilot whales and beaked whales, but this did not lead to any increased risk of DCS. However, in three of eight exposure session with sperm whales, the animal changed to shallower diving, and in all these cases this seem to result in an increased risk of DCS, although risk was still within the normal risk range of this species. When a hypothetical removal of the normal dive response (bradycardia and peripheral vasoconstriction), was added to the behavioral response during model simulations, this led to an increased variance in the estimated end-dive N(2) levels, but no consistent change of risk. In conclusion, we cannot rule out the possibility that a combination

  16. Estimated Tissue and Blood N2 Levels and Risk of Decompression Sickness in Deep-, Intermediate-, and Shallow-Diving Toothed Whales during Exposure to Naval Sonar

    PubMed Central

    Kvadsheim, P. H.; Miller, P. J. O.; Tyack, P. L.; Sivle, L. D.; Lam, F. P. A.; Fahlman, A.

    2012-01-01

    Naval sonar has been accused of causing whale stranding by a mechanism which increases formation of tissue N2 gas bubbles. Increased tissue and blood N2 levels, and thereby increased risk of decompression sickness (DCS), is thought to result from changes in behavior or physiological responses during diving. Previous theoretical studies have used hypothetical sonar-induced changes in both behavior and physiology to model blood and tissue N2 tension PN2, but this is the first attempt to estimate the changes during actual behavioral responses to sonar. We used an existing mathematical model to estimate blood and tissue N2 tension PN2 from dive data recorded from sperm, killer, long-finned pilot, Blainville’s beaked, and Cuvier’s beaked whales before and during exposure to Low- (1–2 kHz) and Mid- (2–7 kHz) frequency active sonar. Our objectives were: (1) to determine if differences in dive behavior affects risk of bubble formation, and if (2) behavioral- or (3) physiological responses to sonar are plausible risk factors. Our results suggest that all species have natural high N2 levels, with deep diving generally resulting in higher end-dive PN2 as compared with shallow diving. Sonar exposure caused some changes in dive behavior in both killer whales, pilot whales and beaked whales, but this did not lead to any increased risk of DCS. However, in three of eight exposure session with sperm whales, the animal changed to shallower diving, and in all these cases this seem to result in an increased risk of DCS, although risk was still within the normal risk range of this species. When a hypothetical removal of the normal dive response (bradycardia and peripheral vasoconstriction), was added to the behavioral response during model simulations, this led to an increased variance in the estimated end-dive N2 levels, but no consistent change of risk. In conclusion, we cannot rule out the possibility that a combination of behavioral and physiological responses to sonar

  17. Impurities: Curse and blessing for crystal growers

    NASA Astrophysics Data System (ADS)

    Fox, Donald K.; Mazelsky, R.

    1990-11-01

    The indespensability of high-quality source materials research and development has been established for many years. However, because contributors to this field are diverse and communication of research results is often fragmented, transfer of the new knowledge is very slow. This paper describes how increasing source purity has improved the quality of several crystals, and how the addition of controlled impurities has decreased the defect density in these crystals. Experimental evidence is presented in this paper.

  18. Spectroscopic investigation of heavy impurity behaviour during ICRH with the JET ITER-like wall

    SciTech Connect

    Czarnecka, A.; Bobkov, V.; Maggi, C.; Pütterich, T.; Coffey, I. H.; Colas, L.; Jacquet, P.; Lawson, K. D.; Mayoral, M.-L. [Euratom Collaboration: JET-EFDA Contributors

    2014-02-12

    Magnetically confined plasmas, such as those produced in the tokamak JET, contain measurable amounts of impurity ions produced during plasma-wall interactions (PWI) from the plasma-facing components and recessed wall areas. The impurities, including high- and mid-Z elements such as tungsten (W) from first wall tiles and nickel (Ni) from Inconel structure material, need to be controlled within tolerable limits, to ensure they do not significantly affect the performance of the plasma. This contribution focuses on documenting W and Ni impurity behavior during Ion Cyclotron Resonance Heating (ICRH) operation with the new ITER-Like Wall (ILW). Ni- and W-concentration were derived from VUV spectroscopy and the impact of applied power level, relative phasing of the antenna straps, plasma separatrix - antenna strap distance, IC resonance position, edge density and different plasma configuration, on the impurity release during ICRH are presented. For the same ICRH power the Ni and W concentration was lower with dipole phasing than in the case of −π/2 phasing. The Ni concentration was found to increase with ICRH power and for the same NBI power level, ICRH-heated plasmas were characterized by two times higher Ni impurity content. Both W and Ni concentrations increased strongly with decreasing edge density which is equivalent to higher edge electron temperatures and more energetic ions responsible for the sputtering. In either case higher levels were found in ICRH than in NBI heated discharges. When the central plasma temperature was similar, ICRH on-axis heating resulted in higher core Ni impurity concentration in comparison to off-axis ICRH in L-mode. It was also found that the main core radiation during ICRH came from W.

  19. Impurity scattering and Friedel oscillations in monolayer black phosphorus

    NASA Astrophysics Data System (ADS)

    Zou, Yong-Lian; Song, Juntao; Bai, Chunxu; Chang, Kai

    2016-07-01

    We study the impurity scattering effect in black phosphorene (BP) in this work. For a single impurity, we calculate the impurity-induced local density of states (LDOS) in momentum space numerically based on a tight-binding Hamiltonian. In real space, we calculate the LDOS and Friedel oscillation analytically. The LDOS shows strong anisotropy in BP. Many impurities in BP are investigated using the T -matrix approximation when the density is low. Midgap states appear in the band gap with peaks in the DOS. The peaks of midgap states are dependent on the impurity potential. For finite positive potential, the impurity tends to bind negative charge carriers and vice versa. The infinite-impurity-potential problem is related to chiral symmetry in BP.

  20. Assessment of Methods for Determining the Impurity Concentration in Mercury Cells

    NASA Astrophysics Data System (ADS)

    Kalemci, M.; Ince, A. T.; Bonnier, G.

    2011-01-01

    The uncertainty arising from chemical impurities is the principle contribution in the uncertainty budget of primary level temperature measurements. Impurities in any substance generally decrease the freezing (or triple) point temperature of a substance, and their influence is governed primarily by their behavior at low concentrations in the host material. The depression in temperature due to impurities is theoretically expressed by Raoult's law which, at final analysis, expresses the linearity between Δ T ( T observed- T pure) and the inverse of the melted fraction (1/ F). Recently, TUBITAK UME carried out a new project on the construction of new reference mercury fixed-point cells. Within the scope of this study, three different sets of mercury cells with different purity values were fabricated. Three methods were employed to assess the impurity concentration in the cells. The first method is known as the mole fraction sum of impurity components, and the chemical assays form the basis for this kind of assessment. The second method of evaluation is based on a 1/ F versus Δ T curve, and the slope values obtained from these curves are important. The final method is to directly compare the new cells with a national (or reference) standard mercury cell. The results obtained from three methods of evaluation showed consistency in terms of qualitative analysis.

  1. Non-intrusive, on-line, simultaneous multi-species impurity monitoring in hydrogen using LIBS

    NASA Astrophysics Data System (ADS)

    Eseller, K. E.; Yueh, F.-Y.; Singh, J. P.

    2011-03-01

    Laser-induced breakdown spectroscopy (LIBS) has been evaluated for on-line, simultaneous multi-species impurity monitoring in hydrogen. A miniature spectrometer with spectral coverage of 620-800 nm and a gated detection system with spectral coverage of 40 nm were both used to record LIBS spectra from the spark produced in sample gas by a frequency-doubled Nd YAG laser. The effect of pressure on detecting the impurity (e.g., nitrogen, argon, and oxygen) in hydrogen was studied. LIBS spectra with different impurity levels of nitrogen, argon, and oxygen were recorded, and the intensity of the spectral lines of Ar, O, N, and H observed were used to form calibration plots for impurity measurement. The limits of detection (LODs) for oxygen, argon, and nitrogen in hydrogen were estimated from the calibration obtained with both the gated and ungated detection. The hydrogen impurity measurements based on the ungated miniature system show reliable and reproductive results. But the LODs with this system are about four times higher than the LODs obtained with a gated detection system in this work.

  2. Impure CO2 geological storage: Preliminary laboratory experiments at ambient conditions

    NASA Astrophysics Data System (ADS)

    Oostrom, M.; Wei, N.; Wang, Y.; Zhang, C.; Bonneville, A.

    2011-12-01

    The cost of carbon capture is related to the purity of the CO2 and subsequent removal of the impurities may be costly. For several sites, it is likely to be more cost effective if impure CO2 is injected, although non-condensable impurities may reduce storage capacity and increase the injection pressure. The feasibility of co-sequestration of CO2 with a certain level of impurity has not been experimentally studied in much detail due to severe limitations associated with visualization and sampling at high pressure and temperature conditions. A series of intermediate-scale experiments has been conducted in a 100-cm-long, 20-cm-high, and 5-cm-wide intermediate-scale flow cell studying the effects of N2 and H2S impurities on CO2 transport in initially brine-saturated porous media. Homogeneous and simple layered heterogeneous systems were used to evaluate pH behavior, measure water and gas pressures, and analyze the gas composition at several locations. A multiphase code was used to compare simulation results for equilibrium dissolution conditions with experimental results. Although these preliminary analogue experiments were conducted at ambient pressure and temperature, the provide insight in the behavior of injected multi-component gas in initially saturated porous media.

  3. Cross-type spectrum rearrangement in graphene with weakly bound impurity centres: an impurity band with anomalous dispersion.

    PubMed

    Skrypnyk, Yuriy V; Loktev, Vadim M

    2013-05-15

    It is demonstrated that an anomalous dispersion region appears in the energy spectrum of charge carriers in graphene on increasing the concentration of weakly bound impurity centres. The corresponding spectrum rearrangement evolves in the neighbourhood of the impurity resonance energy and is of the cross type. The opening of the anomalous dispersion region in the impure graphene is accompanied by a doubling of the number of Dirac points in its electron spectrum. The stated spectrum rearrangement unfolds in a threshold manner, i.e. it takes place when the impurity concentration exceeds a certain critical value, which is determined by the mutual spatial overlap of individual impurity states.

  4. The effect of ICRF antenna phasing on metal impurities in TFTR

    SciTech Connect

    Stevens, J.E.; Bush, C.; Colestock, P.L.; Greene, G.J.; Hill, K.W.; Hosea, J.C.; Phillips, C.K.; Stratton, B.; von Goeler, S.; Wilson, J.R.; Gardner, W.; Hoffman, D.; Lysojvan, A.

    1989-07-01

    ICRF power levels of up to 2.8 MW were achieved during the 1988 experimental run on TFTR. Metal impurity concentrations (Ti, Cr, Fe, Ni) and Z/sub eff/ were monitored during ICRF heating by x-ray pulse height analysis and uv spectroscopy. Antenna phasing was the key variable affecting ICRF performance. No increase in metallic impurities was observed for P/sub rf//approx lt/ 2.8 MW with the antenna straps 0-/Pi/, while a measurable increase in titanium (Faraday screen material) was observed for P/sub rf/ /approx gt/ 1.0 MW with 0-0 phasing. 18 refs., 8 figs.

  5. Quantum correlations of magnetic impurities by a multiple electron scattering in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Gamboa Angulo, Didier; Cordourier Maruri, Guillermo; de Coss Gómez, Romeo

    In this work we analyze the quantum correlations and polarizations states of magnetic impurities spins, when a multiple electron scattering was taken place. A sequence of non-correlated electrons interacts through scattering producing quantum correlation which will have an impact on the electronic transmission. We consider a short range Heisenberg interaction between ballistic electron and static impurities. We analyze the cases when the electron scattering is produce by one and two impurities, obtaining the electronic transmission rates. Concurrence and fidelity calculations are performed to obtain the level of quantum entanglement and polarization correlations. We also discuss the possible application of this model to metallic and semiconductor carbon nanotubes, which could have important implications on spintronics and quantum information devices.

  6. Devolution and grant-in-aid design for the provision of impure public goods.

    PubMed

    Levaggi, Laura; Levaggi, Rosella

    2016-01-01

    Traditional fiscal federalism theory postulates that devolution for the provision of local public goods increases welfare. However, most of the services offered at local level are local impure public goods whose characteristics may prevent devolution from being efficient. Our paper shows that devolution is the optimal choice only for local impure public goods. For an environment characterised by coordination and asymmetry of information problems, we propose the optimal grants-in-aid formula that Central Government should use to reduce welfare losses and we compare it with what suggested by the mainstream literature. Finally, we show under which conditions devolution should be preferred to a centralised solution. From a policy point of view, our paper may explain the heterogeneity in the choices made by countries in terms of devolution in the provision of merit and impure public goods.

  7. Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth.

    PubMed

    Chen, Wanghua; Yu, Linwei; Misra, Soumyadeep; Fan, Zheng; Pareige, Philippe; Patriarche, Gilles; Bouchoule, Sophie; Roca i Cabarrocas, Pere

    2014-06-12

    The incorporation of metal atoms into silicon nanowires during metal-particle-assisted growth is a critical issue for various nanowire-based applications. Here we have been able to access directly the incorporation and redistribution of metal atoms into silicon nanowires produced by two different processes at growth rates ranging from 3 to 40 nm s(-1), by using laser-assisted atom probe tomography and scanning transmission electron microscopy. We find that the concentration of metal impurities in crystalline silicon nanowires increases with the growth rate and can reach a level of two orders of magnitude higher than that in their equilibrium solubility. Moreover, we demonstrate that the impurities are first incorporated into nanowire volume and then segregate at defects such as the twin planes. A dimer-atom-insertion kinetic model is proposed to account for the impurity incorporation into nanowires.

  8. Devolution and grant-in-aid design for the provision of impure public goods.

    PubMed

    Levaggi, Laura; Levaggi, Rosella

    2016-01-01

    Traditional fiscal federalism theory postulates that devolution for the provision of local public goods increases welfare. However, most of the services offered at local level are local impure public goods whose characteristics may prevent devolution from being efficient. Our paper shows that devolution is the optimal choice only for local impure public goods. For an environment characterised by coordination and asymmetry of information problems, we propose the optimal grants-in-aid formula that Central Government should use to reduce welfare losses and we compare it with what suggested by the mainstream literature. Finally, we show under which conditions devolution should be preferred to a centralised solution. From a policy point of view, our paper may explain the heterogeneity in the choices made by countries in terms of devolution in the provision of merit and impure public goods. PMID:27047708

  9. Effect of weak impurities on electronic properties of graphene: Functional renormalization-group analysis

    NASA Astrophysics Data System (ADS)

    Katanin, A.

    2013-12-01

    We consider an effect of weak impurities on the electronic properties of graphene within the functional renormalization-group approach. The energy dependences of the electronic self-energy and density of states near the neutrality point are discussed. Depending on the symmetry of the impurities, the electronic damping Γ and density of states ρ can deviate substantially from those given by the self-consistent Born approximation. We investigate the crossover from the results of the self-consistent Born approximation, which are valid far from the neutrality point to the strong-coupling (diffusive) regime near the neutrality point. For impurities, which are diagonal in both valley and sublattice indices, we obtain a finite density of states at the Fermi level with values which are much bigger than the result of the self-consistent Born approximation.

  10. Detection of subsurface trace impurity in polished fused silica with biological method.

    PubMed

    Wang, Zhuo; Wang, Lin; Yang, Junhong; Peng, Wenqiang; Hu, Hao

    2014-09-01

    Subsurface damage (SSD), especially photoactive impurities, degrades the performance of high energy optics by reduction in the laser induced damage threshold. As the polishing defects are trace content and lie beneath the surface, they are difficult to detect. We herein present a biological method to measure impurities on polished fused silica, based on the intense inhibiting ability about trace level of ceria on enzyme activity. And the enzyme activity is measured in the individual etching solutions of a sequential etching process. Results show that detectability of the biological method satisfies the needs of trace impurity detection with low cost and simple apparatus. Furthermore ceria can be used to tag SSD in lapped and polished optics. PMID:25321508

  11. Radiation Loss and Impurity Abundance during ICRF Heating in the JIPP T-IIU Tokamak

    NASA Astrophysics Data System (ADS)

    Ogawa, Isamu; Kawahata, Kazuo; Ogawa, Yuichi; Watari, Tetsuo; Noda, Nobuaki; Masai, Kuniaki; Kako, Eiji; Tanahashi, Shyugo; Toi, Kazuo; Fujita, Junji

    1987-02-01

    Spectroscopic and bolometric measurements with spatial and temporal resolution show that large radiation loss brings about the decrease in electron and ion temperature and plasma energy. Regarding emissivity in a core plasma, the result by bolometric measurements well agrees with that estimated from impurity abundance and radiative cooling rates. Carbon limiters have an effect to suppress the radiation loss for Ohmic plasma, but is insufficient for ICRF heated plasma. The main contribution to radiation loss may be attributed to Fe impurity released from the ICRF antennae, the Faraday shield and vacuum vessel. By making carbonization, the Fe impurity is suppressed to a low level (nFe/ne˜0.03%) and the radiation loss is reduced to Prad/(POH+Pfr)˜20%. This clearly supported by the observation of Zeff (3.9→1.2).

  12. Oxide impurities in silicon oxide intermetal dielectrics and their potential to elevate via-resistances.

    PubMed

    Qin, Wentao; Alldredge, Donavan; Heleotes, Douglas; Elkind, Alexander; Theodore, N David; Fejes, Peter; Vadipour, Mostafa; Godek, Bill; Lerner, Norman

    2014-08-01

    Silicon oxide used as an intermetal dielectric (IMD) incorporates oxide impurities during both its formation and subsequent processing to create vias in the IMD. Without a sufficient degassing of the IMD, oxide impurities released from the IMD during the physical vapor deposition (PVD) of the glue layer of the vias had led to an oxidation of the glue layer and eventual increase of the via resistances, which correlated with the O-to-Si atomic ratio of the IMD being ~10% excessive as verified by transmission electron microscopy (TEM) analysis. A vacuum bake of the IMD was subsequently implemented to enhance outgassing of the oxide impurities in the IMD before the glue layer deposition. The implementation successfully reduced the via resistances to an acceptable level.

  13. Seismic risk mitigation in deep level South African mines by state of the art underground monitoring - Joint South African and Japanese study

    NASA Astrophysics Data System (ADS)

    Milev, A.; Durrheim, R.; Nakatani, M.; Yabe, Y.; Ogasawara, H.; Naoi, M.

    2012-04-01

    Two underground sites in a deep level gold mine in South Africa were instrumented by the Council for Scientific and Industrial Research (CSIR) with tilt meters and seismic monitors. One of the sites was also instrumented by JApanese-German Underground Acoustic emission Research in South Africa (JAGUARS) with a small network, approximately 40m span, of eight Acoustic Emission (AE) sensors. The rate of tilt, defined as quasi-static deformations, and the seismic ground motion, defined as dynamic deformations, were analysed in order to understand the rock mass behavior around deep level mining. In addition the high frequency AE events recorded at hypocentral distances of about 50m located at 3300m below the surface were analysed. A good correspondence between the dynamic and quasi-static deformations was found. The rate of coseismic and aseismic tilt, as well as seismicity recorded by the mine seismic network, are approximately constant until the daily blasting time, which takes place from about 19:30 until shortly before 21:00. During the blasting time and the subsequent seismic events the coseismic and aseismic tilt shows a rapid increase.Much of the quasi-static deformation, however, occurs independently of the seismic events and was described as 'slow' or aseismic events. During the monitoring period a seismic event with MW 2.2 occurred in the vicinity of the instrumented site. This event was recorded by both the CSIR integrated monitoring system and JAGUARS acoustic emotion network. The tilt changes associated with this event showed a well pronounced after-tilt. The aftershock activities were also well recorded by the acoustic emission and the mine seismic networks. More than 21,000 AE aftershocks were located in the first 150 hours after the main event. Using the distribution of the AE events the position of the fault in the source area was successfully delineated. The distribution of the AE events following the main shock was related to after tilt in order to

  14. Observational study of rock mass response to mining induced seismic events and controlled blasting experiments at deep level gold mines in South Africa

    NASA Astrophysics Data System (ADS)

    Milev, A.; Durrheim, R. J.; Nakatani, M.; Yabe, Y.; Naoi, M. M.; Ogasawara, H.

    2012-12-01

    The strong ground motion generated by mining induced seismic events was studied to characterize the rock mass response and to estimate the site effect on the surface of the underground excavations. A stand-alone instruments, especially designed for recording strong ground motions, were installed underground at a number of deep level gold mines in South Africa. The instruments were recording data at the surface of the stope hangingwalls. A maximum value of 3 m/s was measured. Therefore data were compared to the data recorded in the solid rock by the mine seismic networks to determine the site response. The site response was defined as the ratio of the peak ground velocity measured at the surface of the excavations to the peak ground velocity inferred from the mine seismic data measured in the solid rocks. The site response measured at all mines studied was found to be 9 ± 3 times larger on average. In addition a number of simulated rockbursts were conducted underground in order to estimate the rock mass response when subjected to strong ground motion. The rockbursts were simulated by means of large blasts detonated in solid rock close to the sidewall of a tunnel. The numerical models used in the design of the simulated rockbursts were calibrated by small blasts taking place at each experimental site. A dense array of shock type accelerometers was installed along the blasting wall to monitor the attenuation of the strong ground motion as a function of the distance from the source. The attenuation of peak particle velocity was found to be proportional to R-1.7. In order to improve the understanding of the rock mass behaviour around deep level mining the rate of tilt was monitor and then compare to the seismic ground motion. A good correspondence between the rate of tilt and seismic ground motion was found. The rate of coseismic and aseismic tilt, as well as seismicity recorded by the mine seismic network, are approximately constant until the daily blasting time

  15. Renormalization Group Approach to the X-Ray Absorption Problem and Application to the Vigman-Finkelshtein Model for Magnetic Impurities in Metals.

    NASA Astrophysics Data System (ADS)

    Nunes de Oliveira, Luiz

    The renormalization group techniques developed by Wilson for the Kondo problem are applied to three related problems: the absorption of x-rays by metals, the absorption of x-rays by impurities in metals, and the specific heat of dilute magnetic alloys. In the first problem considered, the x-ray absorption problem, the metal is represented by a half-filled conduction band and a deep level representing a core state. The absorption of an x-ray photon excites an electron from this core level to the conduction band creating a core hole whose positive charge interacts with the conduction electrons. The absorption spectrum is, for the first time, calculated in the energy range 10('-10)D < (omega)-(omega)(,T) < D, where (omega) and (omega)(,T) are the x-ray and threshold frequencies, respectively, and D is the conduction bandwidth. For (omega)-(omega)(,T) < 10('-9)D, the absorption spectrum (mu)((omega)) is described by a power law (mu)(,o) {((omega) -(omega)(,T))/D}('-(alpha)) whose exponent (alpha) agrees with that of the Nozieres-De Dominicis asymptotic (i.e., valid in the limit (omega) (--->) (omega)(,T)) expression to seven decimal places; the prefactor (mu)(,o) is calculated for the first time. For (omega)-(omega)(,T) (TURNEQ) D, remarkably small deviations (e.g., deviations of 15% for (omega)-(omega)(,T) = .3D) from the Nozieres-De Dominicis power law are found. As a second application of the renormalization group techniques, the x-ray absorption spectrum for the resonant level model for impurities in metals is calculated. In this model, the metal is represented by a half-filled conduction band and the impurity by two levels: a core level from which an electron is excited to the conduction band by the absorption of an x-ray photon, and a resonant level, coupled to the conduction electrons, whose energy is lowered by the interaction with the core hole created by the absorption of the x-ray. In the x-ray absorption process, the resonant level is thus shifted to lower

  16. Characterization and validation of an in silico toxicology model to predict the mutagenic potential of drug impurities*

    SciTech Connect

    Valerio, Luis G.; Cross, Kevin P.

    2012-05-01

    Control and minimization of human exposure to potential genotoxic impurities found in drug substances and products is an important part of preclinical safety assessments of new drug products. The FDA's 2008 draft guidance on genotoxic and carcinogenic impurities in drug substances and products allows use of computational quantitative structure–activity relationships (QSAR) to identify structural alerts for known and expected impurities present at levels below qualified thresholds. This study provides the information necessary to establish the practical use of a new in silico toxicology model for predicting Salmonella t. mutagenicity (Ames assay outcome) of drug impurities and other chemicals. We describe the model's chemical content and toxicity fingerprint in terms of compound space, molecular and structural toxicophores, and have rigorously tested its predictive power using both cross-validation and external validation experiments, as well as case studies. Consistent with desired regulatory use, the model performs with high sensitivity (81%) and high negative predictivity (81%) based on external validation with 2368 compounds foreign to the model and having known mutagenicity. A database of drug impurities was created from proprietary FDA submissions and the public literature which found significant overlap between the structural features of drug impurities and training set chemicals in the QSAR model. Overall, the model's predictive performance was found to be acceptable for screening drug impurities for Salmonella mutagenicity. -- Highlights: ► We characterize a new in silico model to predict mutagenicity of drug impurities. ► The model predicts Salmonella mutagenicity and will be useful for safety assessment. ► We examine toxicity fingerprints and toxicophores of this Ames assay model. ► We compare these attributes to those found in drug impurities known to FDA/CDER. ► We validate the model and find it has a desired predictive performance.

  17. Prognostic significance of residual venous obstruction in patients with treated unprovoked deep vein thrombosis: a patient-level meta-analysis.

    PubMed

    Donadini, Marco P; Ageno, Walter; Antonucci, Emilia; Cosmi, Benilde; Kovacs, Michael J; Le Gal, Grégoire; Ockelford, Paul; Poli, Daniela; Prandoni, Paolo; Rodger, Marc; Saccullo, Giorgia; Siragusa, Sergio; Young, Laura; Bonzini, Matteo; Caprioli, Monica; Dentali, Francesco; Iorio, Alfonso; Douketis, James D

    2014-01-01

    Residual venous obstruction (RVO) could improve the stratification of the risk of recurrence after unprovoked deep vein thrombosis (DVT), but results from clinical studies and study-level meta-analyses are conflicting. It was the objective of this analysis to determine if RVO is a valid predictor of recurrent venous thromboembolism (VTE) in patients with a first unprovoked DVT who had received at least three months of anticoagulant therapy. Individual patient data were obtained from the datasets of original studies, after a systematic search of electronic databases (Medline, Embase, Cochrane Library), supplemented by manual reviewing of the reference lists and contacting content experts. A multivariate, shared-frailty Cox model was used to calculate hazard ratios (HRs) for recurrent VTE, including, as covariates: RVO; age; sex; anticoagulation duration before RVO assessment; and anticoagulation continuation after RVO assessment. A total of 2,527 patients from 10 prospective studies were included. RVO was found in 1,380 patients (55.1%) after a median of six months from a first unprovoked DVT. Recurrent VTE occurred in 399 patients (15.8%) during a median follow-up of 23.3 months. After multivariate Cox analysis, RVO was independently associated with recurrent VTE (HR = 1.32, 95% confidence interval [CI]: 1.06-1.65). The association was stronger if RVO was detected early, i.e. at three months after DVT (HR = 2.17; 95% CI: 1.11-4.25), but non-significant if detected later, i.e. >6 months (HR = 1.19; 95% CI: 0.87-1.61). In conclusion, after a first unprovoked DVT, RVO is a weak overall predictor of recurrent VTE. The association is stronger if RVO is detected at an earlier time (3 months) after thrombosis.

  18. Investigation of Zeff and impurity behaviour in lithium coating experiments with full metallic first wall in HT-7 tokamak

    NASA Astrophysics Data System (ADS)

    Chen, Yingjie; Wu, Zhenwei; Liu, Xiaoju; Wang, Dongsheng; Duan, Yanmin; Gao, Wei; Zhang, Ling; Huang, Juan; Sun, Zhen; Jie, Yinxian; Zhao, Junyu

    2015-02-01

    The control of the impurity level in magnetically confined plasmas is a critical issue for future fusion devices. All the graphite tiles have been replaced by molybdenum tiles as limiter materials in the 2011 spring campaign in order to further reduce the recycling and hydrogen content of the plasma. A lithium coating technique has been applied as an important wall conditioning method to the HT-7 tokamak. The effective ion charge Zeff and impurity behavior with full metallic first walls of high-Z materials and lower hydrogen recycling have been investigated in a series of lithium coating experiments in this paper. Plasma performance and impurity behavior without wall coatings are studied in the early stage of the campaign. Comparison of Zeff with different plasma-facing components has been made. A typical lithium coating experiment has been analyzed in order to understand the effect of lithium coating. The evolution of main impurity line radiation, Zeff and the H/(H + D) ratio is analyzed in detail as lithium coating is repeated, indicating that lithium coating is a very effective tool to control impurity level and reduce hydrogen recycling. Furthermore, a boronization is conducted at the end of this campaign in order to make comparison with lithium coating. Experimental results show that lithium coating has much more advantages in edge recycling control, though it does not reduce impurity level as effectively as boronization.

  19. Motion of a Distinguishable Impurity in the Bose Gas: Arrested Expansion Without a Lattice and Impurity Snaking

    NASA Astrophysics Data System (ADS)

    Robinson, Neil J.; Caux, Jean-Sébastien; Konik, Robert M.

    2016-04-01

    We consider the real-time dynamics of an initially localized distinguishable impurity injected into the ground state of the Lieb-Liniger model. Focusing on the case where integrability is preserved, we numerically compute the time evolution of the impurity density operator in regimes far from analytically tractable limits. We find that the injected impurity undergoes a stuttering motion as it moves and expands. For an initially stationary impurity, the interaction-driven formation of a quasibound state with a hole in the background gas leads to arrested expansion—a period of quasistationary behavior. When the impurity is injected with a finite center-of-mass momentum, the impurity moves through the background gas in a snaking manner, arising from a quantum Newton's cradlelike scenario where momentum is exchanged back and forth between the impurity and the background gas.

  20. Motion of a distinguishable Impurity in the Bose gas: Arrested expansion without a lattice and impurity snaking

    DOE PAGES

    Neil J. Robinson; Caux, Jean -Sebastien; Konik, Robert M.

    2016-04-07

    We consider the real-time dynamics of an initially localized distinguishable impurity injected into the ground state of the Lieb-Liniger model. Focusing on the case where integrability is preserved, we numerically compute the time evolution of the impurity density operator in regimes far from analytically tractable limits. We find that the injected impurity undergoes a stuttering motion as it moves and expands. For an initially stationary impurity, the interaction-driven formation of a quasibound state with a hole in the background gas leads to arrested expansion—a period of quasistationary behavior. In conclusion, when the impurity is injected with a finite center-of-mass momentum,more » the impurity moves through the background gas in a snaking manner, arising from a quantum Newton’s cradlelike scenario where momentum is exchanged back and forth between the impurity and the background gas.« less

  1. Motion of a Distinguishable Impurity in the Bose Gas: Arrested Expansion Without a Lattice and Impurity Snaking.

    PubMed

    Robinson, Neil J; Caux, Jean-Sébastien; Konik, Robert M

    2016-04-01

    We consider the real-time dynamics of an initially localized distinguishable impurity injected into the ground state of the Lieb-Liniger model. Focusing on the case where integrability is preserved, we numerically compute the time evolution of the impurity density operator in regimes far from analytically tractable limits. We find that the injected impurity undergoes a stuttering motion as it moves and expands. For an initially stationary impurity, the interaction-driven formation of a quasibound state with a hole in the background gas leads to arrested expansion-a period of quasistationary behavior. When the impurity is injected with a finite center-of-mass momentum, the impurity moves through the background gas in a snaking manner, arising from a quantum Newton's cradlelike scenario where momentum is exchanged back and forth between the impurity and the background gas. PMID:27104716

  2. A mechanistic study of impurity segregation at silicon grain boundaries

    NASA Astrophysics Data System (ADS)

    Käshammer, Peter; Sinno, Talid

    2015-09-01

    The segregation behavior of carbon and oxygen atoms at various silicon grain boundaries was studied using a combination of atomistic simulation and analytical modeling. First, quasi-lattice Grand Canonical Monte Carlo simulations were used to compute segregation isotherms as a function of grain boundary type, impurity atom loading level, and temperature. Next, the atomistic results were employed to regress different analytical segregation models and extract thermodynamic and structural properties. The multilayer Brunauer-Emmett-Teller (BET) isotherm was found to quantitatively capture all the simulation conditions probed in this work, while simpler, single layer models such as the Langmuir-McLean model did not. Some of the BET parameters, namely, the binding free energy of the first adsorption layer and the impurity holding capacity of each layer, were tested for correlation with various measures of grain boundary structure and/or mechanical properties. It was found that certain measures of the atomistic stress distribution correlate strongly with the first-layer binding free energy for substitutional carbon atoms, while common grain boundary identifiers such as sigma value and energy density are not useful in this regard. Preliminary analysis of the more complex case of interstitial oxygen segregation showed that similar measures based on atomistic stress also may be useful here, but more systematic correlative studies are needed to develop a comprehensive picture.

  3. Oxygen and carbon impurities and related defects in silicon

    NASA Technical Reports Server (NTRS)

    Pearce, C. W.

    1985-01-01

    Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

  4. Valency configuration of transition metal impurities in ZnO

    SciTech Connect

    Petit, Leon; Schulthess, Thomas C; Svane, Axel; Temmerman, Walter M; Szotek, Zdzislawa; Janotti, Anderson

    2006-01-01

    We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM=Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn{sub 1-x}TM{sub x}O, the localized TM{sup 2+} configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy {epsilon}F close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with {epsilon}F close to the valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.

  5. Theoretical Study of Radiation from a Broad Range of Impurity Ions for Magnetic Fusion Diagnostics

    SciTech Connect

    Safronova, Alla

    2014-03-14

    Spectroscopy of radiation emitted by impurities plays an important role in the study of magnetically confined fusion plasmas. The measurements of these impurities are crucial for the control of the general machine conditions, for the monitoring of the impurity levels, and for the detection of various possible fault conditions. Low-Z impurities, typically present in concentrations of 1%, are lithium, beryllium, boron, carbon, and oxygen. Some of the common medium-Z impurities are metals such as iron, nickel, and copper, and high-Z impurities, such as tungsten, are present in smaller concentrations of 0.1% or less. Despite the relatively small concentration numbers, the aforementioned impurities might make a substantial contribution to radiated power, and also influence both plasma conditions and instruments. A detailed theoretical study of line radiation from impurities that covers a very broad spectral range from less than 1 Å to more than 1000 Å has been accomplished and the results were applied to the LLNL Electron Beam Ion Trap (EBIT) and the Sustained Spheromak Physics Experiment (SSPX) and to the National Spherical Torus Experiment (NSTX) at Princeton. Though low- and medium-Z impurities were also studied, the main emphasis was made on the comprehensive theoretical study of radiation from tungsten using different state-of-the-art atomic structure codes such as Relativistic Many-Body Perturbation Theory (RMBPT). The important component of this research was a comparison of the results from the RMBPT code with other codes such as the Multiconfigurational Hartree–Fock developed by Cowan (COWAN code) and the Multiconfiguration Relativistic Hebrew University Lawrence Atomic Code (HULLAC code), and estimation of accuracy of calculations. We also have studied dielectronic recombination, an important recombination process for fusion plasma, for variety of highly and low charged tungsten ions using COWAN and HULLAC codes. Accurate DR rate coefficients are needed for

  6. Laser-induced fluorescence of metal-atom impurities in a neutral beam

    SciTech Connect

    Burrell, C.F.; Pyle, R.V.; Sabetimani, Z.; Schlachter, A.S.

    1984-10-01

    The need to limit impurities in fusion devices to low levels is well known. We have investigated, by the technique of laser-induced fluorescence, the concentration of heavy-metal atoms in a neutral beam caused by their evaporation from the hot filaments in a conventional high-current multifilament hydrogen-ion source.

  7. Discriminating assimilants and decoupling deep- vs. shallow-level crystal records at Mount Adams using 238U- 230Th disequilibria and Os isotopes

    NASA Astrophysics Data System (ADS)

    Jicha, Brian R.; Johnson, Clark M.; Hildreth, Wes; Beard, Brian L.; Hart, Garret L.; Shirey, Steven B.; Singer, Brad S.

    2009-01-01

    A suite of 23 basaltic to dacitic lavas erupted over the last 350 kyr from the Mount Adams volcanic field has been analyzed for U-Th isotope compositions to evaluate the roles of mantle versus crustal components during magma genesis. All of the lavas have ( 230Th/ 238U) > 1 and span a large range in ( 230Th/ 232Th) ratios, and most basalts have higher ( 230Th/ 232Th) ratios than andesites and dacites. Several of the lavas contain antecrysts (crystals of pre-existing material), yet internal U-Th mineral isochrons from six of seven lavas are indistinguishable from their eruption ages. This indicates a relatively brief period of time between crystal growth and eruption for most of the phenocrysts (olivine, clinopyroxene, plagioclase, magnetite) prior to eruption. One isochron gave a crystallization age that is ~ 20-25 ka older than its corresponding eruptive age, and is interpreted to reflect mixing of older and juvenile crystals or a protracted period of magma storage in the crust. Much of the eruptive volume since 350 ka consists of lavas that have small to moderate 230Th excesses (2-16%), which are likely inherited from melting of a garnet-bearing intraplate ("OIB-like") mantle source. Following melt generation and subsequent migration through the upper mantle, most Mt. Adams magmas interacted with young, mafic lower crust, as indicated by 187Os/ 188Os ratios that are substantially more radiogenic than the mantle or those expected via mixing of subducted material and the mantle wedge. Moreover, Os-Th isotope variations suggest that unusually large 230Th excesses (25-48%) and high 187Os/ 188Os ratios in some peripheral lavas reflect assimilation of small degree partial melts of pre-Quaternary basement that had residual garnet or Al-rich clinopyroxene. Despite the isotopic evidence for lower crustal assimilation, these processes are not generally recorded in the erupted phenocrysts, indicating that the crystal record of the deep-level 'cryptic' processes has been

  8. Discriminating assimilants and decoupling deep- vs. shallow-level crystal records at Mount Adams using 238U-230Th disequilibria and Os isotopes

    USGS Publications Warehouse

    Jicha, B.R.; Johnson, C.M.; Hildreth, W.; Beard, B.L.; Hart, G.L.; Shirey, S.B.; Singer, B.S.

    2009-01-01

    A suite of 23 basaltic to dacitic lavas erupted over the last 350??kyr from the Mount Adams volcanic field has been analyzed for U-Th isotope compositions to evaluate the roles of mantle versus crustal components during magma genesis. All of the lavas have (230Th/238U) > 1 and span a large range in (230Th/232Th) ratios, and most basalts have higher (230Th/232Th) ratios than andesites and dacites. Several of the lavas contain antecrysts (crystals of pre-existing material), yet internal U-Th mineral isochrons from six of seven lavas are indistinguishable from their eruption ages. This indicates a relatively brief period of time between crystal growth and eruption for most of the phenocrysts (olivine, clinopyroxene, plagioclase, magnetite) prior to eruption. One isochron gave a crystallization age that is ~ 20-25??ka older than its corresponding eruptive age, and is interpreted to reflect mixing of older and juvenile crystals or a protracted period of magma storage in the crust. Much of the eruptive volume since 350??ka consists of lavas that have small to moderate 230Th excesses (2-16%), which are likely inherited from melting of a garnet-bearing intraplate ("OIB-like") mantle source. Following melt generation and subsequent migration through the upper mantle, most Mt. Adams magmas interacted with young, mafic lower crust, as indicated by 187Os/188Os ratios that are substantially more radiogenic than the mantle or those expected via mixing of subducted material and the mantle wedge. Moreover, Os-Th isotope variations suggest that unusually large 230Th excesses (25-48%) and high 187Os/188Os ratios in some peripheral lavas reflect assimilation of small degree partial melts of pre-Quaternary basement that had residual garnet or Al-rich clinopyroxene. Despite the isotopic evidence for lower crustal assimilation, these processes are not generally recorded in the erupted phenocrysts, indicating that the crystal record of the deep-level 'cryptic' processes has been

  9. Cardiac dosimetric evaluation of deep inspiration breath-hold level variances using computed tomography scans generated from deformable image registration displacement vectors.

    PubMed

    Harry, Taylor; Rahn, Doug; Semenov, Denis; Gu, Xuejun; Yashar, Catheryn; Einck, John; Jiang, Steve; Cerviño, Laura

    2016-01-01

    There is a reduction in cardiac dose for left-sided breast radiotherapy during treatment with deep inspiration breath-hold (DIBH) when compared with treatment with free breathing (FB). Various levels of DIBH may occur for different treatment fractions. Dosimetric effects due to this and other motions are a major component of uncertainty in radiotherapy in this setting. Recent developments in deformable registration techniques allow displacement vectors between various temporal and spatial patient representations to be digitally quantified. We propose a method to evaluate the dosimetric effect to the heart from variable reproducibility of DIBH by using deformable registration to create new anatomical computed tomography (CT) scans. From deformable registration, 3-dimensional deformation vectors are generated with FB and DIBH. The obtained deformation vectors are scaled to 75%, 90%, and 110% and are applied to the reference image to create new CT scans at these inspirational levels. The scans are then imported into the treatment planning system and dose calculations are performed. The average mean dose to the heart was 2.5Gy (0.7 to 9.6Gy) at FB, 1.2Gy (0.6 to 3.8Gy, p < 0.001) at 75% inspiration, 1.1Gy (0.6 to 3.1Gy, p = 0.004) at 90% inspiration, 1.0Gy (0.6 to 3.0Gy) at 100% inspiration or DIBH, and 1.0Gy (0.6 to 2.8Gy, p = 0.019) at 110% inspiration. The average mean dose to the left anterior descending artery (LAD) was 19.9Gy (2.4 to 46.4Gy), 8.6Gy (2.0 to 43.8Gy, p < 0.001), 7.2Gy (1.9 to 40.1Gy, p = 0.035), 6.5Gy (1.8 to 34.7Gy), and 5.3Gy (1.5 to 31.5Gy, p < 0.001), correspondingly. This novel method enables numerous anatomical situations to be mimicked and quantifies the dosimetric effect they have on a treatment plan. PMID:26206154

  10. The role of deep convection and nocturnal low-level jets for dust emission in summertime West Africa: Estimates from convection-permitting simulations

    PubMed Central

    Heinold, B; Knippertz, P; Marsham, JH; Fiedler, S; Dixon, NS; Schepanski, K; Laurent, B; Tegen, I

    2013-01-01

    [1] Convective cold pools and the breakdown of nocturnal low-level jets (NLLJs) are key meteorological drivers of dust emission over summertime West Africa, the world’s largest dust source. This study is the first to quantify their relative contributions and physical interrelations using objective detection algorithms and an off-line dust emission model applied to convection-permitting simulations from the Met Office Unified Model. The study period covers 25 July to 02 September 2006. All estimates may therefore vary on an interannual basis. The main conclusions are as follows: (a) approximately 40% of the dust emissions are from NLLJs, 40% from cold pools, and 20% from unidentified processes (dry convection, land-sea and mountain circulations); (b) more than half of the cold-pool emissions are linked to a newly identified mechanism where aged cold pools form a jet above the nocturnal stable layer; (c) 50% of the dust emissions occur from 1500 to 0200 LT with a minimum around sunrise and after midday, and 60% of the morning-to-noon emissions occur under clear skies, but only 10% of the afternoon-to-nighttime emissions, suggesting large biases in satellite retrievals; (d) considering precipitation and soil moisture effects, cold-pool emissions are reduced by 15%; and (e) models with parameterized convection show substantially less cold-pool emissions but have larger NLLJ contributions. The results are much more sensitive to whether convection is parameterized or explicit than to the choice of the land-surface characterization, which generally is a large source of uncertainty. This study demonstrates the need of realistically representing moist convection and stable nighttime conditions for dust modeling. Citation: Heinold, B., P. Knippertz, J. H. Marsham, S. Fiedler, N. S. Dixon, K. Schepanski, B. Laurent, and I. Tegen (2013), The role of deep convection and nocturnal low-level jets for dust emission in summertime West Africa: Estimates from convection

  11. Cardiac dosimetric evaluation of deep inspiration breath-hold level variances using computed tomography scans generated from deformable image registration displacement vectors.

    PubMed

    Harry, Taylor; Rahn, Doug; Semenov, Denis; Gu, Xuejun; Yashar, Catheryn; Einck, John; Jiang, Steve; Cerviño, Laura

    2016-01-01

    There is a reduction in cardiac dose for left-sided breast radiotherapy during treatment with deep inspiration breath-hold (DIBH) when compared with treatment with free breathing (FB). Various levels of DIBH may occur for different treatment fractions. Dosimetric effects due to this and other motions are a major component of uncertainty in radiotherapy in this setting. Recent developments in deformable registration techniques allow displacement vectors between various temporal and spatial patient representations to be digitally quantified. We propose a method to evaluate the dosimetric effect to the heart from variable reproducibility of DIBH by using deformable registration to create new anatomical computed tomography (CT) scans. From deformable registration, 3-dimensional deformation vectors are generated with FB and DIBH. The obtained deformation vectors are scaled to 75%, 90%, and 110% and are applied to the reference image to create new CT scans at these inspirational levels. The scans are then imported into the treatment planning system and dose calculations are performed. The average mean dose to the heart was 2.5Gy (0.7 to 9.6Gy) at FB, 1.2Gy (0.6 to 3.8Gy, p < 0.001) at 75% inspiration, 1.1Gy (0.6 to 3.1Gy, p = 0.004) at 90% inspiration, 1.0Gy (0.6 to 3.0Gy) at 100% inspiration or DIBH, and 1.0Gy (0.6 to 2.8Gy, p = 0.019) at 110% inspiration. The average mean dose to the left anterior descending artery (LAD) was 19.9Gy (2.4 to 46.4Gy), 8.6Gy (2.0 to 43.8Gy, p < 0.001), 7.2Gy (1.9 to 40.1Gy, p = 0.035), 6.5Gy (1.8 to 34.7Gy), and 5.3Gy (1.5 to 31.5Gy, p < 0.001), correspondingly. This novel method enables numerous anatomical situations to be mimicked and quantifies the dosimetric effect they have on a treatment plan.

  12. Microscopic theory of dipole-dipole interaction in ensembles of impurity atoms in a Fabry-Perot cavity

    NASA Astrophysics Data System (ADS)

    Kuraptsev, A. S.; Sokolov, I. M.

    2016-08-01

    We develop a consistent quantum theory of the collective effects that take place when electromagnetic radiation interacts with a dense ensemble of impurity centers embedded in a transparent dielectric and placed in a Fabry-Perot cavity. We have calculated the spontaneous decay dynamics of an excited impurity atom as a specific example of applying the developed general theory. We analyze the dependence of the decay rate on the density of impurity centers and the sample sizes as well as on the characteristic level shifts of impurity atoms caused by the internal fields of the dielectric. We show that a cavity can affect significantly the pattern of collective processes, in particular, the lifetimes of collective states.

  13. Tunable Dirac-point resonance induced by a STM-coupled Anderson impurity on a topological insulator surface

    NASA Astrophysics Data System (ADS)

    Deng, Ming-Xun; Wang, Rui-Qiang; Luo, Wei; Sheng, L.; Wang, B. G.; Xing, D. Y.

    2016-09-01

    The interaction effect between the surface states of a topological insulator (TI) and a STM-coupled Anderson impurity is studied by using equations of motion of the Green’s functions. Remarkably, we show that when a coupling between the Anderson impurity and the STM tip is included, the tunneling resonance and the Kondo peak can be tuned to be exactly at the Dirac point, by adjusting the impurity level and Fermi energy, such that the local density of states at the Dirac point is significantly enhanced. This is in contrast to the case of a STM-decoupled Anderson impurity, where both resonances are always fully suppressed at the Dirac point. Our finding suggests a pathway to experimentally control the fundamental properties of the electrons on a TI surface.

  14. Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Xiang, Yong; Yu, Tongjun; Ji, Cheng; Cheng, Yutian; Yang, Xuelin; Kang, Xiangning; Shen, Bo; Zhang, Guoyi

    2016-08-01

    The deep level traps and the electrical properties of fluorine plasma treated (F-treated) and non-treated Al0.83In0.17N/AlN/GaN Schottky barrier diodes (SBDs) were investigated by the temperature-dependent current-voltage (I-V) and deep level transient spectroscopy (DLTS) measurements. Three deep level traps were detected in the SBD after F-treatment at ~E c  -  0.17 eV, ~E c  -  0.27 eV and ~E c  -  1.14 eV. One of the deep level traps at ~E c  -  1.14 eV is mainly located in the Al0.83In0.17N barrier layer with a captured cross section (σ) of ~6.50  ×  10-18 cm2. This F-related deep level trap has 3-4 orders of magnitude of the larger σ and ~0.46 eV greater active energy than that of the dislocation-related one at ~E c  -  0.68 eV with σ of ~1.92  ×  10-21 cm2. Meanwhile, the leakage current of F-treated SBD at  -5 V is reduced by ~2 orders of magnitude compared with that of the non-treated one. This leakage current reduction is mainly attributed to the increase of the Poole-Frenkel emission barrier height from ~0.09 eV in non-treated SBD to ~0.46 eV in the F-treated one. It is believed that the main reverse current transportation is the Poole-Frenkel emission from the F-related deep level trap states into the continuum states of the dislocations in F-treated Al0.83In0.17N/AlN/GaN SBD.

  15. Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes

    NASA Astrophysics Data System (ADS)

    Xiang, Yong; Yu, Tongjun; Ji, Cheng; Cheng, Yutian; Yang, Xuelin; Kang, Xiangning; Shen, Bo; Zhang, Guoyi

    2016-08-01

    The deep level traps and the electrical properties of fluorine plasma treated (F-treated) and non-treated Al0.83In0.17N/AlN/GaN Schottky barrier diodes (SBDs) were investigated by the temperature-dependent current–voltage (I–V) and deep level transient spectroscopy (DLTS) measurements. Three deep level traps were detected in the SBD after F-treatment at ~E c  ‑  0.17 eV, ~E c  ‑  0.27 eV and ~E c  ‑  1.14 eV. One of the deep level traps at ~E c  ‑  1.14 eV is mainly located in the Al0.83In0.17N barrier layer with a captured cross section (σ) of ~6.50  ×  10‑18 cm2. This F-related deep level trap has 3–4 orders of magnitude of the larger σ and ~0.46 eV greater active energy than that of the dislocation-related one at ~E c  ‑  0.68 eV with σ of ~1.92  ×  10‑21 cm2. Meanwhile, the leakage current of F-treated SBD at  ‑5 V is reduced by ~2 orders of magnitude compared with that of the non-treated one. This leakage current reduction is mainly attributed to the increase of the Poole–Frenkel emission barrier height from ~0.09 eV in non-treated SBD to ~0.46 eV in the F-treated one. It is believed that the main reverse current transportation is the Poole–Frenkel emission from the F-related deep level trap states into the continuum states of the dislocations in F-treated Al0.83In0.17N/AlN/GaN SBD.

  16. Determination of the impurities in drug products containing montelukast and in silico/in vitro genotoxicological assessments of sulfoxide impurity.

    PubMed

    Emerce, Esra; Cok, Ismet; Degim, I Tuncer

    2015-10-14

    Impurities affecting safety, efficacy, and quality of pharmaceuticals are of increasing concern for regulatory agencies and pharmaceutical industries, since genotoxic impurities are understood to play important role in carcinogenesis. The study aimed to analyse impurities of montelukast chronically used in asthma theraphy and perform genotoxicological assessment considering regulatory approaches. Impurities (sulfoxide, cis-isomer, Michael adducts-I&II, methylketone, methylstyrene) were quantified using RP-HPLC analysis on commercial products available in Turkish market. For sulfoxide impurity, having no toxicity data and found to be above the qualification limit, in silico mutagenicity prediction analysis, miniaturized bacterial gene mutation test, mitotic index determination and in vitro chromosomal aberration test w/wo metabolic activation system were conducted. In the analysis of different batches of 20 commercial drug products from 11 companies, only sulfoxide impurity exceeded qualification limit in pediatric tablets from 2 companies and in adult tablets from 7 companies. Leadscope and ToxTree programs predicted sulfoxide impurity as nonmutagenic. It was also found to be nonmutagenic in Ames MPF Penta I assay. Sulfoxide impurity was dose-dependent cytotoxic in human peripheral lymphocytes, however, it was found to be nongenotoxic. It was concluded that sulfoxide impurity should be considered as nonmutagenic and can be classified as ordinary impurity according to guidelines. PMID:26205398

  17. Evaluating additives and impurities in zinc electrowinning

    NASA Astrophysics Data System (ADS)

    Gonzalez-Dominguez, J. A.; Lew, R. W.

    1995-01-01

    The zinc electrowinning (EW) process is very sensitive to the presence of impurities. There is only one EW plant in the world that we know of that operates at moderate current efficiency and deposition times without using any additives. All the others must use them continuously. Additives allow zinc EW to occur at high current efficiencies while suppressing excessive acid mist formation. The study of the electrochemical effects of additives in zinc EW is not straightforward. This article presents a review of the experimental techniques currently used at Cominco Research: Cyclic voltammetry, Hull cells, laboratory and mini-cell electrowinning techniques are all described and their relationship to the industrial operation is discussed.

  18. Enhanced ionized impurity scattering in nanowires

    NASA Astrophysics Data System (ADS)

    Oh, Jung Hyun; Lee, Seok-Hee; Shin, Mincheol

    2013-06-01

    The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor deactivation from the dielectric mismatch. The effects of poorly screened dopant atoms from the dielectric mismatch and variable carrier density in nanowires are found to play a crucial role in determining the nanowire resistivity. Using Green's function method within the self-consistent Born approximation, it is shown that donor deactivation and ionized impurity scattering combined with the charged interface traps successfully to explain the increase in the resistivity of Si nanowires while reducing the radius, measured by Björk et al. [Nature Nanotech. 4, 103 (2009)].

  19. Deep Lysimeter

    DOEpatents

    Hubbell, Joel M.; Sisson, James B.

    2004-06-01

    A deep lysimeter including a hollow vessel having a chamber, a fill conduit extending into the chamber through apertures, a semi-permeable member mounted on the vessel and in fluid communication with the fill conduit, and a line connection for retrieving the lysimeter.

  20. Deep Trouble.

    ERIC Educational Resources Information Center

    Popke, Michael

    2002-01-01

    Discusses how the safety-related ruling by the National Federation of State High School Associations to eliminate the option of using 18-inch starting platforms in pools less than 4 feet deep may affect operators of swimming pools and the swim teams who use them. (EV)

  1. Density matrix renormalization group study in energy space for a single-impurity Anderson model and an impurity quantum phase transition

    NASA Astrophysics Data System (ADS)

    Shirakawa, Tomonori; Yunoki, Seiji

    2016-05-01

    The density matrix renormalization group method is introduced in energy space to study Anderson impurity models. The method allows for calculations in the thermodynamic limit and is advantageous for studying not only the dynamical properties, but also the quantum entanglement of the ground state at the vicinity of an impurity quantum phase transition. This method is applied to obtain numerically exactly the ground-state phase diagram of the single-impurity Anderson model on the honeycomb lattice at half-filling. The calculation of local static quantities shows that the phase diagram contains two distinct phases, the local moment (LM) phase and the asymmetric strong coupling (ASC) phase, but no Kondo screening phase. These results are supported by the local spin and charge excitation spectra, which exhibit qualitatively different behavior in these two phases and also reveal the existence of the valence fluctuating point at the phase boundary. For comparison, we also study the low-energy effective pseudogap Anderson model using the method introduced here. Although the high-energy excitations are obviously different, we find that the ground-state phase diagram and the asymptotically low-energy excitations are in good quantitative agreement with those for the single-impurity Anderson model on the honeycomb lattice, thus providing a quantitative justification for the previous studies based on low-energy approximate approaches. Furthermore, we find that the lowest entanglement level is doubly degenerate for the LM phase, whereas it is singlet for the ASC phase and is accidentally threefold degenerate at the valence fluctuating point. This should be contrasted with the degeneracy of the energy spectrum because the ground state is found to be always singlet. Our results therefore clearly demonstrate that the low-lying entanglement spectrum can be used to determine with high accuracy the phase boundary of the impurity quantum phase transition.

  2. Macromolecule Crystal Quality Improvement in Microgravity: The Role of Impurities

    NASA Technical Reports Server (NTRS)

    Judge, Russell A.; Snell, Edward H.; Pusey, Marc L.; Sportiello, Michael G.; Todd, Paul; Bellamy, Henry; Borgstahl, Gloria E.; Pokros, Matt; Cassanto, John M.

    2000-01-01

    While macromolecule impurities may affect crystal size and morphology the over-riding question is; "How do macromolecule impurities effect crystal X-ray quality and diffraction resolution?" In the case of chicken egg white lysozyme, crystals can be grown in the presence of a number of impurities without affecting diffraction resolution. One impurity however, the lysozyme dimer, does negatively impact the X-ray crystal properties. Crystal quality improvement as a result of better partitioning of this impurity during crystallization in microgravity has been reported'. In our recent experimental work dimer partitioning was found to be not significantly different between the two environments. Mosaicity analysis of pure crystals showed a reduced mosaicity and increased signal to noise for the microgravity grown crystals. Dimer incorporation however, did greatly reduce the resolution limit in both ground and microgravity grown crystals. These results indicate that impurity effects in microgravity are complex and may rely on the conditions or techniques employed.

  3. Impurity confinement and transport in high confinement regimes without edge localized modes on DIII-D

    SciTech Connect

    Grierson, B. A. Nazikian, R. M.; Solomon, W. M.; Burrell, K. H.; Garofalo, A. M.; Belli, E. A.; Staebler, G. M.; Evans, T. E.; Smith, S. P.; Chrobak, C.; Fenstermacher, M. E.; McKee, G. R.; Orlov, D. M.; Chrystal, C.

    2015-05-15

    Impurity transport in the DIII-D tokamak [J. L. Luxon, Nucl. Fusion 42, 614 (2002)] is investigated in stationary high confinement (H-mode) regimes without edge localized modes (ELMs). In plasmas maintained by resonant magnetic perturbation (RMP), ELM-suppression, and QH-mode, the confinement time of fluorine (Z = 9) is equivalent to that in ELMing discharges with 40 Hz ELMs. For selected discharges with impurity injection, the impurity particle confinement time compared to the energy confinement time is in the range of τ{sub p}/τ{sub e}≈2−3. In QH-mode operation, the impurity confinement time is shown to be smaller for intense, coherent magnetic, and density fluctuations of the edge harmonic oscillation than weaker fluctuations. Transport coefficients are derived from the time evolution of the impurity density profile and compared to neoclassical and turbulent transport models NEO and TGLF. Neoclassical transport of fluorine is found to be small compared to the experimental values. In the ELMing and RMP ELM-suppressed plasma, the impurity transport is affected by the presence of tearing modes. For radii larger than the mode radius, the TGLF diffusion coefficient is smaller than the experimental value by a factor of 2–3, while the convective velocity is within error estimates. Low levels of diffusion are observed for radii smaller than the tearing mode radius. In the QH-mode plasma investigated, the TGLF diffusion coefficient is higher inside of ρ=0.4 and lower outside of 0.4 than the experiment, and the TGLF convective velocity is more negative by a factor of approximately 1.7.

  4. Regional and Site-Scale Hydrogeologic Analyses of a Proposed Canadian Deep Geologic Repository for Low and Intermediate Level Radioactive Waste

    NASA Astrophysics Data System (ADS)

    Sykes, J. F.; Normani, S. D.; Yin, Y.; Sykes, E. A.

    2009-05-01

    A Deep Geologic Repository (DGR) for Low and Intermediate Level radioactive waste has been proposed by Ontario Power Generation for the eastern edge of the Michigan Basin at the Bruce site, near Tiverton, Ontario, Canada. The DGR is to be constructed within the argillaceous Ordovician limestone of the Cobourg Formation at a depth of about 680 m below ground surface. This paper describes a regional-scale and linked site-scale geologic conceptual model for the DGR site and analyzes flow system evolution using the FRAC3DVS-OPG flow and transport model. The work illustrates the factors that influence the predicted long-term performance of the geosphere barrier and provides a framework for the assembly and integration of site-specific geoscientific data. The structural contours at the regional and site scale of the 31 sedimentary strata that may be present above the Precambrian crystalline basement rock were defined by the Ontario Petroleum Institute's Oil, Gas and Salt Resources Library borehole logs covering Southern Ontario and by site-specific data. The regional- scale domain encompasses an 18,500 km2 region extending from Lake Huron to Georgian Bay. The site- scale spatial domain encompasses an area of approximately 361 km2 with the repository at its centre. Its boundary conditions are determined using both the nested model approach and an embedment approach. The groundwater zone below the Devonian is characterized by units containing pore fluids with high concentrations of total dissolved solids that can exceed 300 g/l. Site-specific data indicate that the Ordovician is under-pressured relative to the surface elevation while the Cambrian is over-pressured. The computational sequence for the analyses involves the calculation of steady-state density independent flow that is used as the initial condition for the determination of pseudo-equilibrium for a density-dependent flow system that has an initial TDS distribution developed from observed data. Sensitivity

  5. Strong ground motion generated by controlled blasting experiments and mining induced seismic events recorded underground at deep level mines in South Africa

    NASA Astrophysics Data System (ADS)

    Milev, A.; Selllers, E.; Skorpen, L.; Scheepers, L.; Murphy, S.; Spottiswoode, S. M.

    2011-12-01

    A number of simulated rockbursts were conducted underground at deep level gold mines in South Africa in order to estimate the rock mass response when subjected to strong ground motion. The rockbursts were simulated by means of large blasts detonated in solid rock close to the sidewall of a tunnel. The simulated rockbursts involved the design of the seismic source, seismic observations in the near and far field, high-speed video filming, a study of rock mass conditions such as fractures, joints, rock strength etc. Knowledge of the site conditions before and after the simulated rockbursts was also gained. The numerical models used in the design of the simulated rockbursts were calibrated by small blasts taking place at each experimental site. A dense array of shock type accelerometers was installed along the blasting wall to monitor the attenuation of the strong ground motion as a function of the distance from the source. The attenuation of peak particle velocities, was found to be proportional to R^-1.7. Special investigations were carried out to evaluate the mechanism and the magnitude of damage, as well as the support behaviour under excessive dynamic loading. The strong ground motion generated by mining induced seismic events was studied, as part of this work, not only to characterize the rock mass response, but also to estimate the site effect on the surface of the underground excavations. A stand-alone instrument especially designed for recording strong ground motions was used to create a large database of peak particle velocities measured on stope hangingwalls. A total number of 58 sites located in stopes where the Carbon Leader Reef, Ventersdorp Contact Reef, Vaal Reef and Basal Reef are mined, were monitored. The peak particle velocities were measured at the surface of the excavations to identify the effect of the free surface and the fractures surrounding the underground mining. Based on these measurements the generally accepted velocity criterion of 3 m

  6. Multichannel Kondo impurity dynamics in a Majorana device.

    PubMed

    Altland, A; Béri, B; Egger, R; Tsvelik, A M

    2014-08-15

    We study the multichannel Kondo impurity dynamics realized in a mesoscopic superconducting island connected to metallic leads. The effective "impurity spin" is nonlocally realized by Majorana bound states and strongly coupled to lead electrons by non-Fermi liquid correlations. We explore the spin dynamics and its observable ramifications near the low-temperature fixed point. The topological protection of the system raises the perspective to observe multichannel Kondo impurity dynamics in experimentally realistic environments.

  7. Numerical Simulation of mobile BEC-impurity interaction

    NASA Astrophysics Data System (ADS)

    Lausch, Tobias; Grusdt, Fabian; Fleischhauer, Michael; Widera, Artur

    2016-05-01

    Cooling atoms to temperatures, where quantum effects become dominant, has become a standard in cold atom experiments. Especially interactions of quantum baths such as fermi gases and the implementation of impurities, which form fermi polarons, have been studied theoretically and experimentally in detail. However, detailed experiments on the bose polaron and the interaction between impurities and a bose gas are still elusive. We consider a model, where we immerse a single impurity into a BEC, which is described by Bogoliubov approximation. From the master equation, we derived the impurity's momentum resolved scattering and cooling dynamics for numerical simulations. Such cooling processes should enable momentum resolved radio-frequency spectroscopy of the BEC polaron.

  8. Impurity Gettering Effect of Te Inclusions in Cdznte Single Crystals

    SciTech Connect

    Yang, G.; Bolotnikov, A; Cui, Y; Camarda, G; Hossain, A; James, R

    2009-01-01

    The local impurity distribution in Te inclusions of CdZnTe (CZT) crystal was investigated by the time-of-flight secondary ion mass spectrometry (Tof-SIMS) technique. Direct evidence of impurity gettering in Te inclusions has been observed for the first time. The impurity gettering in Te inclusions originated from the diffusion mechanism during crystal growth and segregation mechanism during crystal cooling. This phenomenon is meaningful, because it reveals how Te inclusions affect CZT properties and provides a possible approach to reduce the impurities in CZT by the way of removing Te inclusions.

  9. Impurity-induced conductance anomaly in zigzag carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Chang, Po-Yao; Huang, Wen-Min; Lin, Hsiu-Hau

    2009-02-01

    Impurities in carbon nanotubes give rise to rich physics due to the honeycomb lattice structure. We concentrate on the conductance through a point-like defect in metallic zigzag carbon nanotube via the Landauer-Büttiker approach. At low bias, the conductance is suppressed due to the presence of an additional impurity state existing only on one of the sublattices. In consequence, the suppression is exactly half of the perfect conductance without impurity. Furthermore, there exists a transport resonance at larger bias where the perfect conductance is recovered as if the impurity were absent. Implications of these conductance anomalies are elaborated and experimental detections in realistic carbon nanotubes are also discussed.

  10. Topological state engineering by potential impurities on chiral superconductors

    NASA Astrophysics Data System (ADS)

    Kaladzhyan, Vardan; Röntynen, Joel; Simon, Pascal; Ojanen, Teemu

    2016-08-01

    In this work we consider the influence of potential impurities deposited on top of two-dimensional chiral superconductors. As discovered recently, magnetic impurity lattices on an s -wave superconductor may give rise to a rich topological phase diagram. We show that a similar mechanism takes place in chiral superconductors decorated by nonmagnetic impurities, thus avoiding the delicate issue of magnetic ordering of adatoms. We illustrate the method by presenting the theory of potential impurity lattices embedded on chiral p -wave superconductors. While a prerequisite for the topological state engineering is a chiral superconductor, the proposed procedure results in vistas of nontrivial descendant phases with different Chern numbers.

  11. Coulomb impurity scattering in topological insulator thin films

    SciTech Connect

    Yin, Gen; Wickramaratne, Darshana; Lake, Roger K.; Zhao, Yuanyuan

    2014-07-21

    Inter-surface coupling in thin-film topological insulators can reduce the surface state mobility by an order of magnitude in low-temperature transport measurements. The reduction is caused by a reduction in the group velocity and an increased s{sub z} component of the surface-state spin which weakens the selection rule against large-angle scattering. An intersurface potential splits the degenerate bands into a Rashba-like bandstructure. This reduces the intersurface coupling, it largely restores the selection rule against large angle scattering, and the ring-shaped valence band further reduces backscattering by requiring, on average, larger momentum transfer for backscattering events. The effects of temperature, Fermi level, and intersurface potential on the Coulomb impurity scattering limited mobility are analyzed and discussed.

  12. The effect of working gas impurities on plasma jets

    SciTech Connect

    Liu, X. Y.; He, M. B.; Liu, D. W.

    2015-04-15

    Air intrusion reduced the purity of working gas inside the tube for plasma jet, and thereby, affected the discharge dynamics. In this paper, the effect of using working gas with different purity level (helium purity 99.99999%, 99.99%, 99.9%, and 99%) on photoionization and the chemical reactivity of plasma jet were studied using a 2 dimensional plasma jet model. Photoionization of air species acted as a source of pre-ionization in front of the ionization region, which facilitated the transition from localized discharge to streamers inside the tube. The density of reactive species inside the tube was found to increase with the concentration of working gas impurities. For the highest purity helium (99.99999%), despite a low photoionization rate and the distance between the photoionization region and ionization region inside the tube, by increasing the applied voltage and decreasing the distance between the electrode and nozzle, plasma jets were formed.

  13. Effect of nonmagnetic impurities on s± superconductivity in the presence of incipient bands

    NASA Astrophysics Data System (ADS)

    Chen, X.; Mishra, V.; Maiti, S.; Hirschfeld, P. J.

    2016-08-01

    Several Fe chalcogenide superconductors without hole pockets at the Fermi level display high temperature superconductivity, in apparent contradiction to naive spin fluctuation pairing arguments. Recently, scanning tunneling microscopy experiments studied the influence of impurities on some of these materials and claimed that nonmagnetic impurities do not create in-gap states, leading to the conclusion that the gap must be s++, i.e., conventional s wave with no gap sign change. Here we critique this argument, and give various ways sign-changing gaps can be consistent with the absence of such bound states. In particular, we calculate the bound states for an s± system with a hole pocket below the Fermi level, and show that the nonmagnetic impurity bound state energy generically tracks the gap edge Em i n in the system, thereby rendering it unobservable. A failure to observe a bound state in the case of a nonmagnetic impurity therefore cannot be used as an argument to exclude sign-changing pairing states.

  14. Unsteady-state transfer of impurities during crystal growth of sucrose in sugarcane solutions

    NASA Astrophysics Data System (ADS)

    Martins, P. M.; Ferreira, A.; Polanco, S.; Rocha, F.; Damas, A. M.; Rein, P.

    2009-07-01

    In this work, we present growth rate data of sucrose crystals in the presence of impurities that can be used by both sugar technologists and crystal growth scientists. Growth rate curves measured in a pilot-scale evaporative crystallizer suggest a period of slow growth that follows the seeding of crystals into supersaturated technical solutions. The observed trend was enhanced by adding typical sugarcane impurities such as starch, fructose or dextran to the industrial syrups. Maximum growth rates of sucrose resulted at intermediate rather than high supersaturation levels in the presence of the additives. The effects of the additives on the sucrose solubility and sucrose mass transfer in solution were taken into account to explain the observed crystal growth kinetics. A novel mechanism was identified of unsteady-state adsorption of impurities at the crystal surface and their gradual replacement by the crystallizing solute towards the equilibrium occupation of the active sites for growth. Specifically designed crystallization experiments at controlled supersaturation confirmed this mechanism by showing increasing crystal growth rates with time until reaching a steady-state value for a given supersaturation level and impurity content.

  15. Deep-level-driven anomalous temperature dependence of lattice constants and energy gaps in MgxZn1-xSe and MgxZn1-xSe:Co2+ single crystals

    NASA Astrophysics Data System (ADS)

    Kim, Wha-Tek

    1999-02-01

    Pure MgxZn1-xSe (type C) single crystals were grown by the closed-tube sublimation method. MgxZn1-xSe (type D) and MgxZn1-xSe:Co2+ single crystals in which deep levels exist were grown by the chemical transport reaction method. The temperature dependence of the optical energy gaps of the MgxZn1-xSe (type C) single crystals fitted well with the Manoogian-Leclerc equation. However, the temperature dependence of the optical energy gaps of the MgxZn1-xSe (type D) and MgxZn1-xSe:Co2+ single crystals was anomalous in the temperature range of 10-70 K. This anomalous temperature dependence was analyzed as originating from a volume dilation effect due to deep-level defects.

  16. Assessment of Embrittlement of VHTR Structural Alloys in Impure Helium Environments

    SciTech Connect

    Crone, Wendy; Cao, Guoping; Sridhara, Kumar

    2013-05-31

    The helium coolant in high-temperature reactors inevitably contains low levels of impurities during steady-state operation, primarily consisting of small amounts of H{sub 2}, H{sub 2}O, CH{sub 4}, CO, CO{sub 2}, and N{sub 2} from a variety of sources in the reactor circuit. These impurities are problematic because they can cause significant long-term corrosion in the structural alloys used in the heat exchangers at elevated temperatures. Currently, the primary candidate materials for intermediate heat exchangers are Alloy 617, Haynes 230, Alloy 800H, and Hastelloy X. This project will evaluate the role of impurities in helium coolant on the stress-assisted grain boundary oxidation and creep crack growth in candidate alloys at elevated temperatures. The project team will: • Evaluate stress-assisted grain boundary oxidation and creep crack initiation and crack growth in the temperature range of 500-850°C in a prototypical helium environment. • Evaluate the effects of oxygen partial pressure on stress-assisted grain boundary oxidation and creep crack growth in impure helium at 500°C, 700°C, and 850°C respectively. • Characterize the microstructure of candidate alloys after long-term exposure to an impure helium environment in order to understand the correlation between stress-assisted grain boundary oxidation, creep crack growth, material composition, and impurities in the helium coolant. • Evaluate grain boundary engineering as a method to mitigate stress-assisted grain boundary oxidation and creep crack growth of candidate alloys in impure helium. The maximum primary helium coolant temperature in the high-temperature reactor is expected to be 850-1,000°C.Corrosion may involve oxidation, carburization, or decarburization mechanisms depending on the temperature, oxygen partial pressure, carbon activity, and alloy composition. These corrosion reactions can substantially affect long-term mechanical properties such as crack- growth rate and fracture

  17. Quasibound states and transport characteristics of Au chains with a substitutional S impurity.

    PubMed

    Wawrzyniak-Adamczewska, M; Kostyrko, T

    2013-02-27

    Electronic transport properties of short gold atom chains with a single sulfur impurity were studied using density functional theory. It is found that the role of the impurity atom in the transport properties is twofold. First, it acts as a scattering center in the dominating 6s-orbital transmission channel and generally leads to a decrease of the transmission function in a wide energy region around the Fermi level. Second, it gives rise to a quasibound state manifesting as a peak near the Fermi level both in the partial density of states as well as in the transmission function. Because of the hybridization of the sulfur 3p and gold 5d orbitals in its formation, the quasibound state moves locally upward in the gold 5d transmission channel and brings about an enhancement of the transmission function in a narrow energy region near the Fermi level. The height of the peak of the quasibound state in the transmission function depends significantly on the position of the impurity in the chain and its energy varies with the bias voltage. The current-voltage (I-V) characteristics become asymmetric with a departure of the impurity from the central position in the chain and they are nonlinear for small values of the voltage (V < 0.1 V). It is proposed that a careful analysis of the I-V characteristics or the voltage dependence of the differential conductance may be used for unambiguous location of the light impurity in experiments with gold chains.

  18. Effect of single interstitial impurity in iron-based superconductors with sign-changed s-wave pairing symmetry

    NASA Astrophysics Data System (ADS)

    Yu, Xiang-Long; Liu, Da-Yong; Quan, Ya-Min; Zheng, Xiao-Jun; Zou, Liang-Jian

    2015-12-01

    We employ the self-consistent Bogoliubov-de Gennes (BdG) formulation to investigate the effect of single interstitial nonmagnetic/magnetic impurity in iron-based superconductors with s ± -wave pairing symmetry. We find that both the nonmagnetic and magnetic impurities can induce bound states within the superconducting (SC) gap and a π phase shift of SC order parameter at the impurity site. However, different from the interstitial-nonmagnetic-impurity case characterized by two symmetric peaks with respect to zero energy, the interstitial magnetic one only induces single bound-state peak. In the strong scattering regime this peak can appear at the Fermi level, which has been observed in the recent scanning tunneling microscope (STM) experiment of Fe(Te,Se) superconductor with interstitial Fe impurities (Yin et al. 2015 [44]). This novel single in-gap peak feature also distinguishes the interstitial case from the substitutional one with two peaks. These results provide important information for comparing the different impurity effects in the iron-based superconductors.

  19. Joint interpretation of high-precision tilt data and mining induced seismic events recorded underground in deep level gold mine in South Africa

    NASA Astrophysics Data System (ADS)

    Milev, Alexander; Share, Pieter; Durrheim, Ray; Naoi, Makoto; Nakatani, Masao; Yabe, Yasuo; Ogasawara, Hiroshi

    2013-04-01

    Seismicity associated with deep-level mining has for long been a problem, leading to rockburst and other similar hazards. Several studies have been completed in an attempt to minimize the total amount of seismicity. In this study high resolution measurements of ground tilting in combination with seismic monitoring is used to observe how the rock mass responds to mining. A good correspondence between the coseismic and the aseismic tilt was found. The rate of coseismic and aseismic tilt, as well as seismicity recorded by the mine seismic network, are approximately constant until the daily blasting time, which takes place from about 19:30 until shortly before 21:00. During the blasting time and the subsequent seismic events, the coseismic and aseismic tilt shows a rapid increase. In an attempt to distinguish between the different mechanisms of tilting two types of events were recognized. The "fast" seismic events characterized with sharp increase of the tilt during the seismic rupture and "slow" seismic events characterized by creep type post seismic deformations. Tilt behaviour before and after a seismic event was also analysed. The fact that no recognizable aftertilt was observed for more of the "fast" seismic events means that there is no gradual release of stress and an associated continuous strain rate change afterwards. It can therefore be concluded that a large seismic event causes a rapid change in the state of stress rather than a gradual change in the strain rate. The mechanism of the observed "slow" seismic events is more complicated. Although several explanations have been proposed, a suggestion for further work could be to investigate the presence of "slow" events in or after blasting time more closely. During the monitoring period a seismic event with MW 2.2 occurred in the vicinity of the instrumented site. This event was recorded by both the CSIR integrated monitoring system and JAGUARS acoustic emission network. More than 21,000 AE aftershocks were

  20. JET Carbon Screening Experiments Using Methane Gas Puffing and its Relation to Intrinsic Carbon Impurities

    NASA Astrophysics Data System (ADS)

    Strachan, Jim

    2002-11-01

    Impurity depletion results from three impurity processes: 1) generation at the plasma facing materials, 2) penetration through the SOL to the core, and 3) confinement in the plasma core. Carbon screening experiments using methane gas injection [1] quantify the second process, and elucidate some features of the first process. JET L-Mode experiments scanned those parameters influencing the JET SOL and/or intrinsic impurity level. An empirical scaling was derived for carbon penetration into L-Mode JET plasmas. L-Mode screening was 3-20 times better for plasmas connected to the divertor than for similar limited plasmas. The screening was worse for methane injection from the mid-plane and best for injection from the divertor. The screening was worse for H-Mode than L-Mode. Both ELM-averaged and inter-ELM H-Mode screening was documented. The screening results were used to understand the intrinsic impurity levels which decreased at higher density partly due to better carbon screening. Diverted L-Mode intrinsic carbon arose from both the main chamber and the divertor. At higher power, and therefore in H-Mode, the carbon originated primarily from the divertor. DIVIMP and EDGE2D were used to model the observed screening. The modelling indicated carbon removal to the divertor required lower SOL temperatures in order for Coulomb collisions to couple the impurity ions to the deuterium SOL flows. Consequently, carbon removal occurred primarily in the outer SOL regions. [1]G.M. McCracken, et al, Nuclear Fusion 33, 1409 (1993)

  1. Deep Vein Thrombosis

    MedlinePlus

    Deep vein thrombosis, or DVT, is a blood clot that forms in a vein deep in the body. Most deep vein ... the condition is called thrombophlebitis. A deep vein thrombosis can break loose and cause a serious problem ...

  2. Impurity transport through a strongly interacting bosonic quantum gas

    SciTech Connect

    Johnson, T. H.; Clark, S. R.; Bruderer, M.; Jaksch, D.

    2011-08-15

    Using near-exact numerical simulations, we study the propagation of an impurity through a one-dimensional Bose lattice gas for varying bosonic interaction strengths and filling factors at zero temperature. The impurity is coupled to the Bose gas and confined to a separate tilted lattice. The precise nature of the transport of the impurity is specific to the excitation spectrum of the Bose gas, which allows one to measure properties of the Bose gas nondestructively, in principle, by observing the impurity; here we focus on the spatial and momentum distributions of the impurity as well as its reduced density matrix. For instance, we show it is possible to determine whether the Bose gas is commensurately filled as well as the bandwidth and gap in its excitation spectrum. Moreover, we show that the impurity acts as a witness to the crossover of its environment from the weakly to the strongly interacting regime, i.e., from a superfluid to a Mott insulator or Tonks-Girardeau lattice gas, and the effects on the impurity in both of these strongly interacting regimes are clearly distinguishable. Finally, we find that the spatial coherence of the impurity is related to its propagation through the Bose gas.

  3. Tight-Binding Description of Impurity States in Semiconductors

    ERIC Educational Resources Information Center

    Dominguez-Adame, F.

    2012-01-01

    Introductory textbooks in solid state physics usually present the hydrogenic impurity model to calculate the energy of carriers bound to donors or acceptors in semiconductors. This model treats the pure semiconductor as a homogeneous medium and the impurity is represented as a fixed point charge. This approach is only valid for shallow impurities…

  4. Removal of polar impurities from diesel and jet fuel

    SciTech Connect

    Diaz, Z.; Miller, J.H.

    1990-04-03

    This patent describes a process for the removal of polar impurities in diesel or jet fuel. It comprises: treating the diesel or jet fuel with a non-ionic macroreticular cross-linked acrylic aliphatic ester resin to effect removal of the polar impurities.

  5. Impurity Effects on Caroli-de Gennes-Matricon Mode in Vortex Core in Superconductors

    NASA Astrophysics Data System (ADS)

    Masaki, Yusuke; Kato, Yusuke

    2016-01-01

    We have developed a scheme of Gor'kov Green's functions to treat the impurity effects on the Caroli-de Gennes-Matricon (CdGM) mode in superconductors (SCs) by improving the Kopnin-Kravtsov scheme with respect to the coherence factors and applicability to various SCs. We can study the impurity effects while keeping the discreteness of the energy spectrum, in contrast to the quasiclassical theory. We can thus apply this scheme to SCs with a small quasiclassical parameter kFξ0 (which is the product of the Fermi wavenumber kF and the coherence length ξ0 in a pure SC at zero temperature) and/or in the superclean regime Δ miniτ ≫ 1 (Δmini and τ denote, respectively, the level spacing of the CdGM mode called the minigap and the relaxation time for the CdGM mode and we take ħ = 1). We investigate the impurity effects as a white noise for a vortex in an s-wave SC and two types of vortex in a chiral p-wave SC for various values of the quasiclassical parameter and impurity strength (from the moderately clean regime to the superclean regime) and confirm the validity of this scheme.

  6. Classification of illicit heroin by UPLC-Q-TOF analysis of acidic and neutral manufacturing impurities.

    PubMed

    Liu, Cuimei; Hua, Zhendong; Bai, Yanping

    2015-12-01

    The illicit manufacture of heroin results in the formation of trace levels of acidic and neutral manufacturing impurities that provide valuable information about the manufacturing process used. In this work, a new ultra performance liquid chromatography-quadrupole-time of flight mass spectrometry (UPLC-Q-TOF) method; that features high resolution, mass accuracy and sensitivity for profiling neutral and acidic heroin manufacturing impurities was developed. After the UPLC-Q-TOF analysis, the retention times and m/z data pairs of acidic and neutral manufacturing impurities were detected, and 19 peaks were found to be evidently different between heroin samples from "Golden Triangle" and "Golden Crescent". Based on the data set of these 19 impurities in 150 authentic heroin samples, classification of heroin geographic origins was successfully achieved utilizing partial least squares discriminant analysis (PLS-DA). By analyzing another data set of 267 authentic heroin samples, the developed discrimiant model was validated and proved to be accurate and reliable. PMID:26364155

  7. VUV/XUV measurements of impurity emission in plasmas with liquid lithium surfaces on LTX

    NASA Astrophysics Data System (ADS)

    Tritz, Kevin; Bell, Ronald E.; Beiersdorfer, Peter; Boyle, Dennis; Clementson, Joel; Finkenthal, Michael; Kaita, Robert; Kozub, Tom; Kubota, Shigeyuki; Lucia, Matthew; Majeski, Richard; Merino, Enrique; Schmitt, John; Stutman, Dan

    2014-12-01

    The VUV/XUV spectrum has been measured on the Lithium Tokamak eXperiment (LTX) using a transmission grating imaging spectrometer (TGIS) coupled to a direct-detection x-ray charge-coupled device camera. TGIS data show significant changes in the ratios between the lithium and oxygen impurity line emission during discharges with varying lithium wall conditions. Lithium coatings that have been passivated by lengthy exposure to significant levels of impurities contribute to a large O/Li ratio measured during LTX plasma discharges. Furthermore, previous results have indicated that a passivated lithium film on the plasma facing components will function as a stronger impurity source when in the form of a hot liquid layer compared to a solid lithium layer. However, recent TGIS measurements of plasma discharges in LTX with hot stainless steel boundary shells and a fresh liquid lithium coating show lower O/Li impurity line ratios when compared to discharges with a solid lithium film on cool shells. These new measurements help elucidate the somewhat contradictory results of the effects of solid and liquid lithium on plasma confinement observed in previous experiments.

  8. VUV/XUV measurements of impurity emission in plasmas with liquid lithium surfaces on LTX

    NASA Astrophysics Data System (ADS)

    Tritz, Kevin; Finkenthal, M.; Stutman, D.; Bell, R. E.; Boyle, D. P.; Kaita, R.; Kozub, T.; Lucia, M.; Majeski, R.; Merino, E.; Schmitt, J. C.; Biersdorfer, P.; Clementson, J.; Kubota, S.

    2014-10-01

    The VUV/XUV spectrum has been measured on the Lithium Tokamak eXperiment (LTX) using a spatially-resolved transmission grating imaging spectrometer (TIGS) coupled to a direct-detection X-ray CCD camera. TGIS data show significant changes in the ratios between the lithium and oxygen impurity line emission during the discharges with different lithium wall conditions. Lithium coatings that have been semi-passivated by lengthy exposure to significant levels of impurities contribute to a large O/Li ratio measured during LTX plasma discharges. Furthermore, results from previous experiments have indicated that a passivated lithium film on the boundary shells can function as a stronger impurity source when in the form of a liquid layer compared to a solid lithium layer. However, recent TGIS measurements of plasma discharges in LTX with hot stainless steel boundary shells and a fresh liquid lithium coating show significantly lower O/Li impurity line ratios when compared to discharges with a solid lithium film on cooler shells. These new line ratio measurements help clarify the somewhat contradictory results of the effects of solid and liquid lithium on plasma confinement observed in previous experiments. Work supported by DoE Grant #DE-FG02-09ER55012.

  9. Repartitioning of NaCl and Protein Impurities in Lysozyme Crystallization

    NASA Technical Reports Server (NTRS)

    Vekilov, Peter G.; Monaco, Lisa A.; Thomas, Bill R.; Stojanoff, Vivian; Rosenberger, Franz

    1996-01-01

    Nonuniform precipitant and impurity incorporation in protein crystals can cause lattice strain and, thus, possibly decrease the X-ray diffraction resolution. To address this issue, a series of crystallization experiments were carried out, in which initial supersaturation, NaCl concentration, protein purity level and crystallized fraction were varied. Lysozyme and protein impurities, as well as sodium and chloride were independently determined in the initial solution, supernatant and crystals. The segregation coefficients for Na(+) and Cl(-) were found to be independent of supersaturation and NaCl concentration, and decreased with crystallized fraction/crystal size. Numerical evaluation of the extensive body of data, based on a nucleation-growth- repartitioning model, suggests a core of approx. 40 microns in which salt is incorporated in much greater concentrations than during later growth. Small crystals containing higher amounts of incorporated NaCl also had higher protein impurity contents. This suggests that the excess salt is associated with the protein impurities in the core. X-ray topography revealed strain fields in the center of the crystals comparable in size to the inferred core. The growth rates of crystals smaller than 30-40 pm in size were consistently 1.5-2 times lower than those of larger crystals, presumably due to higher chemical potentials in the core.

  10. EFFECT OF FUEL IMPURITY ON STRUCTURAL INTEGRITY OF Ni-YSZ ANODE OF SOFCs

    SciTech Connect

    Liu, Wenning N.; Sun, Xin; Marina, Olga A.; Pederson, Larry R.; Khaleel, Mohammad A.

    2011-01-01

    Electricity production through the integration of coal gasification with solid oxide fuel cells (SOFCs) may potentially be an efficient technique for clean energy generation. However, multiple minor and trace components are naturally present in coals. These impurities in coal gas not only degrade the electrochemical performance of Ni-YSZ anode used in SOFCs, but also severely endanger the structural integrity of the Ni-YSZ anode. In this paper, effect of the trace impurity of the coal syngases on the mechanical degradation of Ni-YSZ anode was studied by using an integrated experimental/modeling approach. Phosphorus is taken as an example of impurity. Anode-support button cell was used to experimentally explore the migration of phosphorous impurity in the Ni-YSZ anode of SOFCs. X-ray mapping was used to show elemental distributions and new phase formation. The subsequent finite element stress analyses were conducted using the actual microstructure of the anode to illustrate the degradation mechanism. It was found that volume expansion induced by the Ni phase change produces high stress level such that local failure of the Ni-YSZ anode is possible under the operating conditions

  11. EFFECT OF FUEL IMPURITY ON STRUCTURAL INTEGRITY OF Ni-YSZ ANODE OF SOFCS

    SciTech Connect

    Liu, Wenning N.; Sun, Xin; Marina, Olga A.; Pederson, Larry R.; Khaleel, Mohammad A.

    2010-12-31

    Electricity production through the integration of coal gasification with solid oxide fuel cells (SOFCs) may potentially be an efficient technique for clean energy generation. However, multiple minor and trace components are naturally present in coals. These impurities in coal gas not only degrade the electrochemical performance of Ni-YSZ anode used in SOFCs, but also severely endanger the structural integrity of the Ni-YSZ anode. In this paper, effect of the trace impurity of the coal syngases on the mechanical degradation of Ni-YSZ anode was studied by using an integrated experimental/modeling approach. Phosphorus is taken as an example of impurity. Anode-support button cell was used to experimentally explore the migration of phosphorous impurity in the Ni-YSZ anode of SOFCs. X-ray mapping was used to show elemental distributions and new phase formation. The subsequent finite element stress analyses were conducted using the actual microstructure of the anode to illustrate the degradation mechanism. It was found that volume expansion induced by the Ni phase change produces high stress level such that local failure of the Ni-YSZ anode is possible under the operating conditions

  12. Mesoscopic Impurities Expose a Nucleation-Limited Regime of Crystal Growth

    NASA Astrophysics Data System (ADS)

    Sleutel, Mike; Lutsko, James F.; Maes, Dominique; Van Driessche, Alexander E. S.

    2015-06-01

    Nanoscale self-assembly is naturally subject to impediments at the nanoscale. The recently developed ability to follow processes at the molecular level forces us to resolve older, coarse-grained concepts in terms of their molecular mechanisms. In this Letter, we highlight one such example. We present evidence based on experimental and simulation data that one of the cornerstones of crystal growth theory, the Cabrera-Vermilyea model of step advancement in the presence of impurities, is based on incomplete physics. We demonstrate that the piercing of an impurity fence by elementary steps is not solely determined by the Gibbs-Thomson effect, as assumed by Cabrera-Vermilyea. Our data show that for conditions leading up to growth cessation, step retardation is dominated by the formation of critically sized fluctuations. The growth recovery of steps is counter to what is typically assumed, not instantaneous. Our observations on mesoscopic impurities for lysozyme expose a nucleation-dominated regime of growth that has not been hitherto considered, where the system alternates between zero and near-pure velocity. The time spent by the system in arrest is the nucleation induction time required for the step to amass a supercritical fluctuation that pierces the impurity fence.

  13. Viscoelasticity of colloidal polycrystals doped with impurities

    NASA Astrophysics Data System (ADS)

    Louhichi, Ameur; Tamborini, Elisa; Oberdisse, Julian; Cipelletti, Luca; Ramos, Laurence

    2015-09-01

    We investigate how the microstructure of a colloidal polycrystal influences its linear visco-elasticity. We use thermosensitive copolymer micelles that arrange in water in a cubic crystalline lattice, yielding a colloidal polycrystal. The polycrystal is doped with a small amount of nanoparticles, of size comparable to that of the micelles, which behave as impurities and thus partially segregate in the grain boundaries. We show that the shear elastic modulus only depends on the packing of the micelles and varies neither with the presence of nanoparticles nor with the crystal microstructure. By contrast, we find that the loss modulus is strongly affected by the presence of nanoparticles. A comparison between rheology data and small-angle neutron-scattering data suggests that the loss modulus is dictated by the total amount of nanoparticles in the grain boundaries, which in turn depends on the sample microstructure.

  14. Viscoelasticity of colloidal polycrystals doped with impurities.

    PubMed

    Louhichi, Ameur; Tamborini, Elisa; Oberdisse, Julian; Cipelletti, Luca; Ramos, Laurence

    2015-09-01

    We investigate how the microstructure of a colloidal polycrystal influences its linear visco-elasticity. We use thermosensitive copolymer micelles that arrange in water in a cubic crystalline lattice, yielding a colloidal polycrystal. The polycrystal is doped with a small amount of nanoparticles, of size comparable to that of the micelles, which behave as impurities and thus partially segregate in the grain boundaries. We show that the shear elastic modulus only depends on the packing of the micelles and varies neither with the presence of nanoparticles nor with the crystal microstructure. By contrast, we find that the loss modulus is strongly affected by the presence of nanoparticles. A comparison between rheology data and small-angle neutron-scattering data suggests that the loss modulus is dictated by the total amount of nanoparticles in the grain boundaries, which in turn depends on the sample microstructure. PMID:26465473

  15. Light-absorbing impurities in Arctic snow

    NASA Astrophysics Data System (ADS)

    Doherty, S. J.; Warren, S. G.; Grenfell, T. C.; Clarke, A. D.; Brandt, R. E.

    2010-12-01

    Absorption of radiation by ice is extremely weak at visible and near-ultraviolet wavelengths, so small amounts of light-absorbing impurities in snow can dominate the absorption of solar radiation at these wavelengths, reducing the albedo relative to that of pure snow, contributing to the surface energy budget and leading to earlier snowmelt. In this study Arctic snow is surveyed for its content of light-absorbing impurities, expanding and updating the 1983-1984 survey of Clarke and Noone. Samples were collected in Alaska, Canada, Greenland, Svalbard, Norway, Russia, and the Arctic Ocean during 1998 and 2005-2009, on tundra, glaciers, ice caps, sea ice, frozen lakes, and in boreal forests. Snow was collected mostly in spring, when the entire winter snowpack is accessible for sampling. Sampling was carried out in summer on the Greenland Ice Sheet and on the Arctic Ocean, of melting glacier snow and sea ice as well as cold snow. About 1200 snow samples have been analyzed for this study. The snow is melted and filtered; the filters are analyzed in a specially designed spectrophotometer system to infer the concentration of black carbon (BC), the fraction of absorption due to non-BC light-absorbing constituents and the absorption Ångstrom exponent of all particles. This is done using BC calibration standards having a mass absorption efficiency of 6.0 m2 g-1 at 550 nm and by making an assumption that the absorption Angstrom exponent for BC is 1.0 and for non-BC light-absorbing aerosol is 5.0. The reduction of snow albedo is primarily due to BC, but other impurities, principally brown (organic) carbon, are typically responsible for ~40% of the visible and ultraviolet absorption. The meltwater from selected snow samples was saved for chemical analysis to identify sources of the impurities. Median BC amounts in surface snow are as follows (nanograms of carbon per gram of snow): Greenland 3, Arctic Ocean snow 7, melting sea ice 8, Arctic Canada 8, subarctic Canada 14

  16. Copper thiocyanate: polytypes, defects, impurities, and surfaces.

    PubMed

    Tsetseris, Leonidas

    2016-07-27

    Copper thiocyanate (CuSCN) is an established solid state dye in solar cells and has emerged as a key material for applications in transparent conductors and solution-processed thin film transistors. Here we report the results of density-functional theory calculations on several fundamental properties related to the performance of CuSCN in the above-mentioned systems. We describe the structural and electronic properties of CuSCN phases and show that the material is prone to polytypism. We also perform a systematic study on various defects and hydrogen impurities and determine their effect on the electronic properties of the host system, particularly with respect to doping. Finally, we show that non-polar surfaces have low formation energies, suggesting easy cleavage along certain directions. PMID:27248787

  17. Wafer-level fabrication of a high-silica v-groove for fiber-optic packaging using deep dry-etching with a dual-frequency high-density plasma

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Won; Heo, Gi-Seok; Choi, Bum-Ho; Kim, Young-Baek; Oh, Jin-Kyoung; Lee, Hyung-Jong

    2015-10-01

    We developed a procedure for fabricating deep silica v-grooves of about 70 μm for fiber-optic applications by using a deep dry-etching with a dual-frequency high-density plasma source. This procedure has the advantages of sub-micron precision with wafer-level productivity and a high etching speed of 0.7 μm/sec. An electro-plated hard mask as thick as 8 μm that can endure the deep dry-etch was also developed. In particular, the angular inclination of the etched groove was controllable by using the flow of C4F8 gas. A fiber array block was assembled by using a v-groove chip. The location error of the fiber cores in the block was measured to be less than 0.3 μm. This confirms that the dry-etched silica v-grooves can be applied to the packaging of optical devices with wafer-level productivity and high precision.

  18. Single atom impurity in a single molecular transistor

    SciTech Connect

    Ray, S. J.

    2014-10-21

    The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the position of the impurity atom in such devices which together with the charging energy of the molecule could be utilised as an electronic fingerprint for the detection of such impurity states in a nano-electronic device. The two gated geometry allows additional control over the electrostatics as can be seen from the total energy surfaces (for a specific charge state), which is sensitive to the positions of the impurity. These devices which are operational at room temperature can provide significant advantages over the conventional silicon based single dopant devices functional at low temperature. The present approach could be a very powerful tool for the detection and control of individual impurity atoms in a single molecular device and for applications in future molecular electronics.

  19. [Impurity removal technology of Tongan injection in liquid preparation process].

    PubMed

    Yang, Xu-fang; Wang, Xiu-hai; Bai, Wei-rong; Kang, Xiao-dong; Liu, Jun-chao; Wu, Yun; Xiao, Wei

    2015-08-01

    In order to effectively remove the invalid impurities in Tongan injection, optimize the optimal parameters of the impurity removal technology of liquid mixing process, in this paper, taking Tongan injection as the research object, with the contents of celandine alkali, and sinomenine, solids reduction efficiency, and related substances inspection as the evaluation indexes, the removal of impurities and related substances by the combined process of refrigeration, coction and activated carbon adsorption were investigated, the feasibility of the impurity removal method was definited and the process parameters were optimized. The optimized process parameters were as follows: refrigerated for 36 h, boiled for 15 min, activated carbon dosage of 0.3%, temperature 100 degrees C, adsorption time 10 min. It can effectively remove the tannin, and other impurities, thus ensure the quality and safety of products.

  20. Impurity effect on surface states of Bi (111) ultrathin films

    NASA Astrophysics Data System (ADS)

    Zhu, Kai; Tian, Dai; Wu, Lin; Xu, Jianli; Jin, Xiaofeng

    2016-08-01

    The surface impurity effect on the surface-state conductivity and weak antilocalization (WAL) effect has been investigated in epitaxial Bi (111) films by magnetotransport measurements at low temperatures. The surface-state conductivity is significantly reduced by the surface impurities of Cu, Fe, and Co. The magnetotransport data demonstrate that the observed WAL is robust against deposition of nonmagnetic impurities, but it is quenched by the deposition of magnetic impurities which break the time reversal symmetry. Our results help to shed light on the effect of surface impurities on the electron and spin transport properties of a 2D surface electron systems. Project supported by the National Basic Research Program of China (Grants Nos. 2015CB921400 and 2011CB921802) and the National Natural Science Foundation of China (Grants Nos. 11374057, 11434003, and 11421404).