State-of-the-Art for Assessing Earthquake Hazards in the United States. Report 19. The Evidence for Reservoir-Induced Macroearthquakes.

DTIC Science & Technology

1982-06-01

pore pressures are dissipating. 232. The question of deep fluid communication is unresolved. Koyna is situated in flow basalt known as the Deccan Traps ...The trap rock formation is about 1200 m thick near Koyna. The basalt flows are irregular and at the damsite seven flows have been mapped. Some of the...ranges from 0 to about 30 km but is generally 2 to 8 km in depth. This places the bulk of the seismicity below the trap rock in a basement rock of unknown

Characterisation of retention properties of charge-trapping memory cells at low temperatures

NASA Astrophysics Data System (ADS)

Yurchuk, E.; Bollmann, J.; Mikolajick, T.

2009-09-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

Production of large Bose-Einstein condensates in a magnetic-shield-compatible hybrid trap

NASA Astrophysics Data System (ADS)

Colzi, Giacomo; Fava, Eleonora; Barbiero, Matteo; Mordini, Carmelo; Lamporesi, Giacomo; Ferrari, Gabriele

2018-05-01

We describe the production of large 23Na Bose-Einstein condensates in a hybrid trap characterized by a weak magnetic field quadrupole and a tightly focused infrared beam. The use of small magnetic field gradients makes the trap compatible with the state-of-the-art magnetic shields. By taking advantage of the deep cooling and high efficiency of gray molasses to improve the initial trap loading conditions, we produce condensates composed of as many as 7 million atoms in less than 30 s .

Trapping cold ground state argon atoms.

PubMed

Edmunds, P D; Barker, P F

2014-10-31

We trap cold, ground state argon atoms in a deep optical dipole trap produced by a buildup cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of cotrapped metastable argon atoms and determine an elastic cross section. Using a type of parametric loss spectroscopy we also determine the polarizability of the metastable 4s[3/2](2) state to be (7.3±1.1)×10(-39)  C m(2)/V. Finally, Penning and associative losses of metastable atoms in the absence of light assisted collisions, are determined to be (3.3±0.8)×10(-10)  cm(3) s(-1).

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Joung-min, E-mail: cho.j.ad@m.titech.ac.jp; Akiyama, Yuto; Kakinuma, Tomoyuki

2013-10-15

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulatedmore » characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V{sub G} above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge.« less

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance canmore » be explained using the deep trap model.« less

76 FR 39369 - Fisheries of the Northeastern United States; Atlantic Deep-Sea Red Crab Fishery; Amendment 3

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-06

... crab vessels may not deploy parlor traps/pots in water depths greater than 400 meters (219 fathoms... water deeper than 400 m; prohibit a limited access red crab vessel from harvesting red crab in water shallower than 400 m; and prohibit parlor traps from being deployed at water shallower than 400 m. This...

Differentiation between Shallow and Deep Charge Trap States on Single Poly(3-hexylthiophene) Chains through Fluorescence Photon Statistics.

PubMed

Grußmayer, Kristin S; Steiner, Florian; Lupton, John M; Herten, Dirk-Peter; Vogelsang, Jan

2015-12-01

Blinking of the photoluminescence (PL) emitted from individual conjugated polymer chains is one of the central observations made by single-molecule spectroscopy (SMS). Important information, for example regarding excitation energy transfer, can be extracted by evaluating dynamic quenching. However, the nature of trap states, which are responsible for PL quenching, often remains obscured. We present a detailed investigation of the photon statistics of single poly(3-hexylthiophene) (P3HT) chains obtained by SMS. The photon statistics provide a measure of the number and brightness of independently emitting areas on a single chain. These observables can be followed during blinking. A decrease in PL intensity is shown to be correlated with either 1) a decrease in the average brightness of the emitting sites; or 2) a decrease in the number of emitting regions. We attribute these phenomena to the formation of 1) shallow charge traps, which can weakly affect all emitting areas of a single chain at once; and 2) deep traps, which have a strong effect on small regions within the single chains. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A.

2015-06-14

Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. Themore » TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5 deep level defects, are aligned in the direction of the applied electric field and the equilibrium polarization can be reached in a relatively short time. When the polarization field is maintained, while cooling the temperature of sample to a sufficiently low degrees, the relaxation times of the aligned dipoles drastically increases. Practically, frozen internal electric field or electrets states remain inside the TlInS{sub 2}:La when the applied bias field is switched off. The influence of deep level defects on TSDC spectra of TlInS{sub 2}:La has been revealed for the first time.« less

Transient photocurrent responses in amorphous Zn-Sn-O thin films

NASA Astrophysics Data System (ADS)

Kim, Ju-Yeon; Oh, Sang-A.; Yu, Kyeong Min; Bae, Byung Seong; Yun, Eui-Jung

2015-04-01

In this study we characterized the transient photocurrent responses in solution-processed amorphous zinc-tin-oxide (a-ZTO) thin films measured under light illumination with a wavelength of 400 nm at different temperatures. By using the temperature-dependent photoconductivities of a-ZTO thin films, we extracted the activation energies (E ac ) of photo-excitation and dark relaxation through an extended stretched exponential analysis (SEA). The SEA was found to describe well the dark relaxation characteristics as well as the photo-excitation processes. The SEA also indicates that the dark relaxation process reveals a dispersive transient photoconductivity with a broader distribution of the E ac while the photo-excitation process shows non-dispersive characteristics. Samples exposed by light at temperatures less than 373 K possess the fast processes of photo-excitation and dark relaxation. This suggests that a fast process, for example, a generation/recombination of charged carriers related to a band-to-band transition and/or shallow/deep oxygen-vacancy (V o ) sub-gap donor states, is dominant in the case of light illumination at low temperatures of less than 373 K. The SEA indicates, however, that a much slower process due mainly to the delay of the onset of ionization/neutralization of the deep V o states by multiple-trapping is dominant for samples under light illumination at a high temperature of 373 K. Based on the experimental results, for the dark relaxation process, we conclude that the process transitions from a fast recombination of electrons through band-to-band transitions and/or shallow/deep V o donor states to a slow neutralization of the ionized V o states occurs due to enhanced carrier multiple-trapping by relatively deep V o trap states when the temperature becomes greater than 363 K. An energy band diagram of a-ZTO thin films was proposed in terms of the temperature and the E ac distribution to explain these observed results.

Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

NASA Astrophysics Data System (ADS)

Duc, Tran Thien; Pozina, Galia; Amano, Hiroshi; Monemar, Bo; Janzén, Erik; Hemmingsson, Carl

2016-07-01

Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition (MOCVD), undoped GaN grown by MOCVD, and halide vapor phase epitaxy (HVPE)-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy on Schottky diodes. One hole trap, labeled HT1, was detected in the Mg-doped sample. It is observed that the hole emission rate of the trap is enhanced by increasing electric field. By fitting four different theoretical models for field-assisted carrier emission processes, the three-dimensional Coulombic Poole-Frenkel (PF) effect, three-dimensional square well PF effect, phonon-assisted tunneling, and one-dimensional Coulombic PF effect including phonon-assisted tunneling, it is found that the one-dimensional Coulombic PF model, including phonon-assisted tunneling, is consistent with the experimental data. Since the trap exhibits the PF effect, we suggest it is acceptorlike. From the theoretical model, the zero field ionization energy of the trap and an estimate of the hole capture cross section have been determined. Depending on whether the charge state is -1 or -2 after hole emission, the zero field activation energy Ei 0 is 0.57 eV or 0.60 eV, respectively, and the hole capture cross section σp is 1.3 ×10-15c m2 or 1.6 ×10-16c m2 , respectively. Since the level was not observed in undoped GaN, it is suggested that the trap is associated with an Mg related defect.

Traps in AlGaN /GaN/SiC heterostructures studied by deep level transient spectroscopy

NASA Astrophysics Data System (ADS)

Fang, Z.-Q.; Look, D. C.; Kim, D. H.; Adesida, I.

2005-10-01

AlGaN /GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10-12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

Interconversion of intrinsic defects in SrTi O3(001 )

NASA Astrophysics Data System (ADS)

Chambers, S. A.; Du, Y.; Zhu, Z.; Wang, J.; Wahila, M. J.; Piper, L. F. J.; Prakash, A.; Yue, J.; Jalan, B.; Spurgeon, S. R.; Kepaptsoglou, D. M.; Ramasse, Q. M.; Sushko, P. V.

2018-06-01

Photoemission features associated with states deep in the band gap of n -SrTi O3(001 ) are found to be ubiquitous in bulk crystals and epitaxial films. These features are present even when there is little signal near the Fermi level. Analysis reveals that these states are deep-level traps associated with defects. The commonly investigated defects—O vacancies, Sr vacancies, and aliovalent impurity cations on the Ti sites—cannot account for these features. Rather, ab initio modeling points to these states resulting from interstitial oxygen and its interaction with donor electrons.

Charge trapping and de-trapping in isolated CdSe/ZnS nanocrystals under an external electric field: indirect evidence for a permanent dipole moment.

PubMed

Zang, Huidong; Cristea, Mihail; Shen, Xuan; Liu, Mingzhao; Camino, Fernando; Cotlet, Mircea

2015-09-28

Single nanoparticle studies of charge trapping and de-trapping in core/shell CdSe/ZnS nanocrystals incorporated into an insulating matrix and subjected to an external electric field demonstrate the ability to reversibly modulate the exciton dynamics and photoluminescence blinking while providing indirect evidence for the existence of a permanent ground state dipole moment in such nanocrystals. A model assuming the presence of energetically deep charge traps physically aligned along the direction of the permanent dipole is proposed in order to explain the dynamics of nanocrystal blinking in the presence of a permanent dipole moment.

Charge trapping and de-trapping in isolated CdSe/ZnS nanocrystals under an external electric field: Indirect evidence for a permanent dipole moment

DOE PAGES

Zang, Huidong; Cristea, Mihail; Shen, Xuan; ...

2015-08-05

Single nanoparticle studies of charge trapping and de-trapping in core/shell CdSe/ZnS nanocrystals incorporated into an insulating matrix and subjected to an external electric field demonstrate the ability to reversibly modulate the exciton dynamics and photoluminescence blinking while providing indirect evidence for the existence of a permanent ground state dipole moment in such nanocrystals. A model assuming the presence of energetically deep charge traps physically aligned along the direction of the permanent dipole is proposed in order to explain the dynamics of nanocrystal blinking in the presence of a permanent dipole moment.

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polyakov, A. Y., E-mail: aypolyakov@gmail.com; Smirnov, N. B.; Govorkov, A. V.

2014-05-14

Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versusmore » 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.« less

Origin of High Electronic Quality in Solar Cell Absorber CH3NH3PbI3

NASA Astrophysics Data System (ADS)

Yin, Wanjian; Shi, Tingting; Wei, Suhua; Yan, Yanfa

Thin-film solar cells based on CH3NH3PbI3 halide perovskites have recently shown remarkable performance. First-principle calculations and molecular dynamic simulations show that the structure of pristine CH3NH3PbI3 is much more disordered than the inorganic archetypal thin-film semiconductor CdTe. However, the structural disorders from thermal fluctuation, point defects and grain boundaries introduce rare deep defect states within the bandgaps; therefore, the material has high electronic quality. We have further shown that this unusually high electronic quality is attributed to the unique electronic structures of halide perovskite: the strong coupling between cation lone-pair Pb s orbitals and anion p orbitals and the large atomic size of constitute cation atoms. We further found that although CH3NH3PbI3 GBs do not introduce a deep gap state, the defect level close to the VBM can still act as a shallow hole trap state. Cl and O can spontaneously segregate into GBs and passivate those defect levels and deactivate the trap state.

A study of trap and recombination centers in MAPbI3 perovskites.

PubMed

Gordillo, G; Otálora, C A; Ramirez, A A

2016-12-07

Trapping and recombination processes in thin films of CH 3 NH 3 PbI 3 (MAPbI 3 ) were studied by means of transient photoconductivity measurements and theoretical simulations of the relaxation curves resulting from the photocurrent measurements; in particular, the influence of temperature as well as of the sample temperature and intensity of illumination and pressure inside the measurement system on the photoconductivity response, were studied. The experimental curves of photocurrent were analyzed using the real part of the Fourier transform. The study revealed that the photocurrent of the MAPbI 3 films, measured at atmospheric pressure, is mainly governed by surface related processes induced by chemisorption and desorption of oxygen, whereas the photocurrent resulting from measurements performed in a vacuum is mainly governed by bulk related processes. It was found that, in general, the photocurrent response is affected by both trap assisted fast recombination processes and traps whose activation process is delayed, with the contribution in the intensity of the photocurrent of the first process being greater that of the second one. Evidence that the MAPbI 3 film exhibits a deep trap state at around 459 meV attributed to trap assisted recombination was found; furthermore, the MAPbI 3 films present shallow trap states at 129 and 24 meV that correspond to trap states whose activation process is delayed.

Deep cooling of optically trapped atoms implemented by magnetic levitation without transverse confinement.

PubMed

Li, Chen; Zhou, Tianwei; Zhai, Yueyang; Xiang, Jinggang; Luan, Tian; Huang, Qi; Yang, Shifeng; Xiong, Wei; Chen, Xuzong

2017-05-01

We report a setup for the deep cooling of atoms in an optical trap. The deep cooling is implemented by eliminating the influence of gravity using specially constructed magnetic coils. Compared to the conventional method of generating a magnetic levitating force, the lower trap frequency achieved in our setup provides a lower limit of temperature and more freedoms to Bose gases with a simpler solution. A final temperature as low as ∼6nK is achieved in the optical trap, and the atomic density is decreased by nearly two orders of magnitude during the second stage of evaporative cooling. This deep cooling of optically trapped atoms holds promise for many applications, such as atomic interferometers, atomic gyroscopes, and magnetometers, as well as many basic scientific research directions, such as quantum simulations and atom optics.

Deep cooling of optically trapped atoms implemented by magnetic levitation without transverse confinement

NASA Astrophysics Data System (ADS)

Li, Chen; Zhou, Tianwei; Zhai, Yueyang; Xiang, Jinggang; Luan, Tian; Huang, Qi; Yang, Shifeng; Xiong, Wei; Chen, Xuzong

2017-05-01

We report a setup for the deep cooling of atoms in an optical trap. The deep cooling is implemented by eliminating the influence of gravity using specially constructed magnetic coils. Compared to the conventional method of generating a magnetic levitating force, the lower trap frequency achieved in our setup provides a lower limit of temperature and more freedoms to Bose gases with a simpler solution. A final temperature as low as ˜ 6 nK is achieved in the optical trap, and the atomic density is decreased by nearly two orders of magnitude during the second stage of evaporative cooling. This deep cooling of optically trapped atoms holds promise for many applications, such as atomic interferometers, atomic gyroscopes, and magnetometers, as well as many basic scientific research directions, such as quantum simulations and atom optics.

Charge Trapping Properties of Ge Nanocrystals Grown via Solid-State Dewetting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Jadli, I.; Aouassa, M.

2018-05-04

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affectsmore » the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.« less

Crystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells.

PubMed

Ng, Annie; Ren, Zhiwei; Shen, Qian; Cheung, Sin Hang; Gokkaya, Huseyin Cem; So, Shu Kong; Djurišić, Aleksandra B; Wan, Yangyang; Wu, Xiaojun; Surya, Charles

2016-12-07

Synthesis of high quality perovskite absorber is a key factor in determining the performance of the solar cells. We demonstrate that hybrid chemical vapor deposition (HCVD) growth technique can provide high level of versatility and repeatability to ensure the optimal conditions for the growth of the perovskite films as well as potential for batch processing. It is found that the growth ambient and degree of crystallization of CH 3 NH 3 PbI 3 (MAPI) have strong impact on the defect density of MAPI. We demonstrate that HCVD process with slow postdeposition cooling rate can significantly reduce the density of shallow and deep traps in the MAPI due to enhanced material crystallization, while a mixed O 2 /N 2 carrier gas is effective in passivating both shallow and deep traps. By careful control of the perovskite growth process, a champion device with power conversion efficiency of 17.6% is achieved. Our work complements the existing theoretical studies on different types of trap states in MAPI and fills the gap on the theoretical analysis of the interaction between deep levels and oxygen. The experimental results are consistent with the theoretical predictions.

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

NASA Technical Reports Server (NTRS)

Dhar, S.; Das, U.; Bhattacharya, P. K.

1986-01-01

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Origin of the different transport properties of electron and hole polarons in an ambipolar polyselenophene-based conjugated polymer

NASA Astrophysics Data System (ADS)

Chen, Zhuoying; Bird, Matthew; Lemaur, Vincent; Radtke, Guillaume; Cornil, Jérôme; Heeney, Martin; McCulloch, Iain; Sirringhaus, Henning

2011-09-01

Understanding the mechanisms limiting ambipolar transport in conjugated polymer field-effect transistors (FETs) is of both fundamental and practical interest. Here, we present a systematic study comparing hole and electron charge transport in an ambipolar conjugated polymer, semicrystalline poly(3,3''-di-n-decylterselenophene) (PSSS). Starting from a detailed analysis of the device characteristics and temperature/charge-density dependence of the mobility, we interpret the difference between hole and electron transport through both the Vissenberg-Matters and the mobility-edge model. To obtain microscopic insight into the quantum mechanical wave function of the charges at a molecular level, we combine charge modulation spectroscopy (CMS) measuring the charge-induced absorption signatures from positive and negative polarons in these ambipolar FETs with corresponding density functional theory (DFT) calculations. We observe a significantly higher switch-on voltage for electrons than for holes due to deep electron trap states, but also a higher activation energy of the mobility for mobile electrons. The CMS spectra reveal that the electrons that remain mobile and contribute to the FET current have a wave function that is more localized onto a single polymer chain than that of holes, which is extended over several polymer chains. We interpret this as evidence that the transport properties of the mobile electrons in PSSS are still affected by the presence of deep electron traps. The more localized electron state could be due to the mobile electrons interacting with shallow trap states in the vicinity of a chemical, potentially water-related, impurity that might precede the capture of the electron into a deeply trapped state.

Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

DOE PAGES

Fleming, R. M.; Seager, C. H.; Lang, D. V.; ...

2015-07-02

In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V 2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range ofmore » capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.« less

White/blue-emitting, water-dispersible CdSe quantum dots prepared by counter ion-induced polymer collapse

NASA Astrophysics Data System (ADS)

Wang, Jing; Goh, Jane Betty; Goh, M. Cynthia; Giri, Neeraj Kumar; Paige, Matthew F.

2015-09-01

The synthesis and characterization of water-dispersible, luminescent CdSe/ZnS semiconductor quantum dots that exhibit nominal "white" fluorescence emission and have potential applications in solid-state lighting is described. The nanomaterials, prepared through counter ion-induced collapse and UV cross-linking of high-molecular weight polyacrylic acid in the presence of appropriate aqueous inorganic ions, were of ∼2-3 nm diameter and could be prepared in gram quantities. The quantum dots exhibited strong luminescence emission in two bands, the first in the blue-region (band edge) of the optical spectrum and the second, a broad emission in the red-region (attributed to deep trap states) of the optical spectrum. Because of the relative strength of emission of the band edge and deep trap state luminescence, it was possible to achieve visible white luminescence from the quantum dots in aqueous solution and in dried, solid films. The optical spectroscopic properties of the nanomaterials, including ensemble and single-molecule spectroscopy, was performed, with results compared to other white-emitting quantum dot systems described previously in the literature.

Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

NASA Astrophysics Data System (ADS)

Kondratenko, S. V.; Iliash, S. A.; Mazur, Yu I.; Kunets, V. P.; Benamara, M.; Salamo, G. J.

2017-09-01

The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-dimensional structures with quantum wires have been studied as functions of temperature and light excitation levels. The photoconductivity (PC) relaxation follows a stretched exponent with decay constant, which depends on the morphology of InGaAs epitaxial layers, presence of deep traps, and energy disorder due to inhomogeneous distribution of size and composition. A hopping model, where electron tunnels between bands of localized states, gives appropriate interpretation for temperature-independent PC decay across the temperature range 150-290 K. At low temperatures (T < 150 K), multiple trapping-retrapping via 1D states of InGaAs quantum wires (QWRs), sub-bands of two-dimensional electron gas of modulation-doped n-GaAs spacers, as well as defect states in the GaAs environment are the dominant relaxation mechanism. The PC and photoluminescence transients for samples with different morphologies of the InGaAs nanostructures are compared. The relaxation rates are found to be largely dependent on energy disorder due to inhomogeneous distribution of strain, nanostructure size and composition, and piezoelectric fields in and around nanostructures, which have a strong impact on efficiency of carrier exchange between bands of the InGaAs QWRs, GaAs spacers, or wetting layers; presence of local electric fields; and deep traps.

δ13C and δ15N Values of Sediment-trap Particles in the Japan and Yamato Basins and Comparison with the Core-top Values in the East/Japan Sea

NASA Astrophysics Data System (ADS)

Khim, Boo-Keun; Otosaka, Shigeyoshi; Park, Kyung-Ae; Noriki, Shinichiro

2018-03-01

Investigation of sediment-trap deployments in the East/Japan Sea (EJS) showed that distinct seasonal variations in particulate organic carbon (POC) fluxes of intermediate-water sediment-traps clearly corresponded to changes in chlorophyll a concentrations estimated from SeaWiFS data. The prominent high POC flux periods (e.g., March) were strongly correlated with the enhanced surface-water phytoplankton blooms. Deep-water sedimenttraps exhibited similar variation patterns to intermediate-water sediment-traps. However, their total flux and POC flux were higher than those of intermediate-water sediment-traps during some months (e.g., April and May), indicating the lateral delivery of some particles to the deep-water sediment-traps. Distinct seasonal δ13C and δ15N variations in settling particles of the intermediate-water sediment-traps were observed, strongly supporting the notion of seasonal primary production. Seasonal variations in δ13C and δ15N values from the deep-water sediment-traps were similar to those of the intermediate-water sediment-traps. However, the difference in δ13C and δ15N values between the intermediate-water and the deepwater sediment-traps may be attributed to degradation of organic matter as it sank through the water column. Comparison of fluxweighted δ13C and δ15N mean values between the deep-water sediment-traps and the core-top sediments showed that strong selective loss of organic matter components (lipids) depleted in 13C and 15N occurred during sediment burial. Nonetheless, the results of our study indicate that particles in the deep-water sediment-trap deposited as surface sediments on the seafloor preserve the record of surface-water conditions, highlighting the usefulness of sedimentary δ13C and δ15N values as a paleoceanographic application in the EJS.

Minority Carrier Electron Traps in CZTSSe Solar Cells Characterized by DLTS and DLOS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kheraj, V.; Lund, E. A.; Caruso, A. E.

2016-11-21

We report observations of minority carrier interactions with deep levels in 6-8% efficient Cu2ZnSn(S, Se)4 (CZTSSe) devices using conventional and minority deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS). Directly observing defect interactions with minority carriers is critical to understanding the recombination impact of deep levels. In devices with Cu2ZnSn(S, Se)4 nanoparticle ink absorber layers we identify a mid-gap state capturing and emitting minority electrons. It is 590+/-50 meV from the conduction band mobility edge, has a concentration near 1015/cm3, and has an apparent electron capture cross section ~10-14 cm2. We conclude that, while energetically positioned nearly-ideallymore » to be a recombination center, these defects instead act as electron traps because of a smaller hole cross-section. In CZTSe devices produced using coevaporation, we used minority carrier DLTS on traditional samples as well as ones with transparent Ohmic back contacts. These experiments demonstrate methods for unambiguously probing minority carrier/defect interactions in solar cells in order to establish direct links between defect energy level observations and minority carrier lifetimes. Furthermore, we demonstrate the use of steady-state device simulation to aid in the interpretation of DLTS results e.g. to put bounds on the complimentary carrier cross section even in the absence its direct measurement. This combined experimental and theoretical approach establishes rigorous bounds on the impact on carrier lifetime and Voc of defects observed with DLTS as opposed to, for example, assuming that all deep states act as strong recombination centers.« less

Subinertial Slope-Trapped Waves in the Northeastern Gulf of Mexico

DTIC Science & Technology

2009-06-01

describe low-frequency varia- bility in the GOM and its interaction with the topo- graphy. Oey and Lee (2002) describe modeled deep eddy kinetic...deep energy can penetrate onto the upper part of the slope in this region; Oey and Lee (2002) state that their model cannot adequately resolve...slope topography in the NE GOM is described by Cames et al. (2008), Hamilton and Lee (2005), and Wang et al. (2003). Hamilton and Lee (2005) found

Trap Depth Engineering of SrSi2O2N2:Ln2+,Ln3+ (Ln2+ = Yb, Eu; Ln3+ = Dy, Ho, Er) Persistent Luminescence Materials for Information Storage Applications.

PubMed

Zhuang, Yixi; Lv, Ying; Wang, Le; Chen, Wenwei; Zhou, Tian-Liang; Takeda, Takashi; Hirosaki, Naoto; Xie, Rong-Jun

2018-01-17

Deep-trap persistent luminescence materials exhibit unique properties of energy storage and controllable photon release under additional stimulation, allowing for both wavelength and intensity multiplexing to realize high-capacity storage in the next-generation information storage system. However, the lack of suitable persistent luminescence materials with deep traps is the bottleneck of such storage technologies. In this study, we successfully developed a series of novel deep-trap persistent luminescence materials in the Ln 2+ /Ln 3+ -doped SrSi 2 O 2 N 2 system (Ln 2+ = Yb, Eu; Ln 3+ = Dy, Ho, Er) by applying the strategy of trap depth engineering. Interestingly, the trap depth can be tailored by selecting different codopants, and it monotonically increases from 0.90 to 1.18 eV in the order of Er, Ho, and Dy. This is well explained by the energy levels indicated in the host-referred binding energy scheme. The orange-red-emitting SrSi 2 O 2 N 2 :Yb,Dy and green-emitting SrSi 2 O 2 N 2 :Eu,Dy phosphors are demonstrated to be good candidates of information storage materials, which are attributed to their deep traps, narrow thermoluminescence glow bands, high emission efficiency, and excellent chemical stability. This work not only validates the suitability of deep-trap persistent luminescence materials in the information storage applications, but also broadens the avenue to explore such kinds of new materials for applications in anticounterfeiting and advanced displays.

Study of Exciton Hopping Transport in PbS Colloidal Quantum Dot Thin Films Using Frequency- and Temperature-Scanned Photocarrier Radiometry

NASA Astrophysics Data System (ADS)

Hu, Lilei; Mandelis, Andreas; Melnikov, Alexander; Lan, Xinzheng; Hoogland, Sjoerd; Sargent, Edward H.

2017-01-01

Solution-processed colloidal quantum dots (CQDs) are promising materials for realizing low-cost, large-area, and flexible photovoltaic devices. The study of charge carrier transport in quantum dot solids is essential for understanding energy conversion mechanisms. Recently, solution-processed two-layer oleic-acid-capped PbS CQD solar cells with one layer treated with tetrabutylammonium iodide (TBAI) serving as the main light-absorbing layer and the other treated with 1,2-ethanedithiol (EDT) acting as an electron-blocking/hole-extraction layer were reported. These solar cells demonstrated a significant improvement in power conversion efficiency of 8.55% and long-term air stability. Coupled with photocarrier radiometry measurements, this work used a new trap-state mediated exciton hopping transport model, specifically for CQD thin films, to unveil and quantify exciton transport mechanisms through the extraction of hopping transport parameters including exciton lifetimes, hopping diffusivity, exciton detrapping time, and trap-state density. It is shown that PbS-TBAI has higher trap-state density than PbS-EDT that results in higher PbS-EDT exciton lifetimes. Hopping diffusivities of both CQD thin film types show similar temperature dependence, particularly higher temperatures yield higher hopping diffusivity. The higher diffusivity of PbS-TBAI compared with PbS-EDT indicates that PbS-TBAI is a much better photovoltaic material than PbS-EDT. Furthermore, PCR temperature spectra and deep-level photothermal spectroscopy provided additional insights to CQD surface trap states: PbS-TBAI thin films exhibit a single dominant trap level, while PbS-EDT films with lower trap-state densities show multiple trap levels.

Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide

NASA Astrophysics Data System (ADS)

Scheinert, Susanne; Pernstich, Kurt P.; Batlogg, Bertram; Paasch, Gernot

2007-11-01

It has been demonstrated [K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg, A. N. Rashid, and G. Schitter, J. Appl. Phys. 96, 6431 (2004)] that a controllable shift of the threshold voltage in pentacene thin film transistors is caused by the use of organosilanes with different functional groups forming a self-assembled monolayer (SAM) on the gate oxide. The observed broadening of the subthreshold region indicates that the SAM creates additional trap states. Indeed, it is well known that traps strongly influence the behavior of organic field-effect transistors (OFETs). Therefore, the so-called "amorphous silicon (a-Si) model" has been suggested to be an appropriate model to describe OFETs. The main specifics of this model are transport of carriers above a mobility edge obeying Boltzmann statistics and exponentially distributed tail states and deep trap states. Here, approximate trap distributions are determined by adjusting two-dimensional numerical simulations to the experimental data. It follows from a systematic variation of parameters describing the trap distributions that the existence of both donorlike and acceptorlike trap distributions near the valence band, respectively, and a fixed negative interface charge have to be assumed. For two typical devices with different organosilanes the electrical characteristics can be described well with a donorlike bulk trap distribution, an acceptorlike interface distribution, and/or a fixed negative interface charge. As expected, the density of the fixed or trapped interface charge depends strongly on the surface treatment of the dielectric. There are some limitations in determining the trap distributions caused by either slow time-dependent processes resulting in differences between transfer and output characteristics, or in the uncertainty of the effective mobility.

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

NASA Astrophysics Data System (ADS)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

Study of formation of deep trapping mechanism by UV, beta and gamma irradiated Eu(3+) activated SrY2O4 and Y4Al2O9 phosphors.

PubMed

Dubey, Vikas; Kaur, Jagjeet; Parganiha, Yogita; Suryanarayana, N S; Murthy, K V R

2016-04-01

This paper reports the thermoluminescence properties of Eu(3+) doped different host matrix phosphors (SrY2O4 and Y4Al2O9). The phosphor is prepared by high temperature solid state reaction method. The method is suitable for large scale production and fixed concentration of boric acid using as a flux. The prepared samples were characterized by X-ray diffraction technique and the crystallite size calculated by Scherer's formula. The prepared phosphor characterized by Scanning Electron Microscopic (SEM), Fourier Transform Infrared (FTIR), Energy Dispersive X-ray analysis (EDX), thermoluminescence (TL) and Transmission Electron Microscopic (TEM) techniques. The prepared phosphors for different concentration of Eu(3+) ions were examined by TL glow curve for UV, beta and gamma irradiation. The UV 254nm source used for UV irradiation, Sr(90) source was used for beta irradiation and Co(60) source used for gamma irradiation. SrY2O4:Eu(3+)and Y4Al2O9:Eu(3+) phosphors which shows both higher temperature peaks and lower temperature peaks for UV, beta and gamma irradiation. Here UV irradiated sample shows the formation of shallow trap (surface trapping) and the gamma irradiated sample shows the formation of deep trapping. The estimation of trap formation was evaluated by knowledge of trapping parameters. The trapping parameters such as activation energy, order of kinetics and frequency factor were calculated by peak shape method. Here most of the peak shows second order of kinetics. The effect of gamma, beta and UV exposure on TL studies was also examined and it shows linear response with dose which indicate that the samples may be useful for TL dosimetry. Formation of deep trapping mechanism by UV, beta and gamma irradiated Eu(3+) activated SrY2O4 and Y4Al2O9 phosphors is discussed in this paper. Copyright © 2015 Elsevier Ltd. All rights reserved.

Numerically Simulating Carbonate Mineralization of Basalt with Injection of Carbon Dioxide into Deep Saline Formations

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, Mark D.; McGrail, B. Peter; Schaef, Herbert T.

2006-07-08

The principal mechanisms for the geologic sequestration of carbon dioxide in deep saline formations include geological structural trapping, hydrological entrapment of nonwetting fluids, aqueous phase dissolution and ionization, and geochemical sorption and mineralization. In sedimentary saline formations the dominant mechanisms are structural and dissolution trapping, with moderate to weak contributions from hydrological and geochemical trapping; where, hydrological trapping occurs during the imbibition of aqueous solution into pore spaces occupied by gaseous carbon dioxide, and geochemical trapping is controlled by generally slow reaction kinetics. In addition to being globally abundant and vast, deep basaltic lava formations offer mineralization kinetics that makemore » geochemical trapping a dominate mechanism for trapping carbon dioxide in these formations. For several decades the United States Department of Energy has been investigating Columbia River basalt in the Pacific Northwest as part of its environmental programs and options for natural gas storage. Recently this nonpotable and extensively characterized basalt formation is being reconsidered as a potential reservoir for geologic sequestration of carbon dioxide. The reservoir has an estimated storage capacity of 100 giga tonnes of carbon dioxide and comprises layered basalt flows with sublayering that generally alternates between low permeability massive and high permeability breccia. Chemical analysis of the formation shows 10 wt% Fe, primarily in the +2 valence. The mineralization reaction that makes basalt formations attractive for carbon dioxide sequestration is that of calcium, magnesium, and iron silicates reacting with dissolved carbon dioxide, producing carbonate minerals and amorphous quartz. Preliminary estimates of the kinetics of the silicate-to-carbonate reactions have been determined experimentally and this research is continuing to determine effects of temperature, pressure, rock composition and mineral assemblages on the reaction rates. This study numerically investigates the injection, migration and sequestration of supercritical carbon dioxide in deep Columbia River basalt formations using the multifluid subsurface flow and reactive transport simulator STOMP-CO2 with its ECKEChem module. Simulations are executed on high resolution multiple stochastic realizations of the layered basalt systems and demonstrate the migration behavior through layered basalt formations and the mineralization of dissolved carbon dioxide. Reported results include images of the migration behavior, distribution of carbonate formation, quantities of injected and sequestered carbon dioxide, and percentages of the carbon dioxide sequestered by different mechanisms over time.« less

Nonlinear quantum Rabi model in trapped ions

NASA Astrophysics Data System (ADS)

Cheng, Xiao-Hang; Arrazola, Iñigo; Pedernales, Julen S.; Lamata, Lucas; Chen, Xi; Solano, Enrique

2018-02-01

We study the nonlinear dynamics of trapped-ion models far away from the Lamb-Dicke regime. This nonlinearity induces a blockade on the propagation of quantum information along the Hilbert space of the Jaynes-Cummings and quantum Rabi models. We propose to use this blockade as a resource for the dissipative generation of high-number Fock states. Also, we compare the linear and nonlinear cases of the quantum Rabi model in the ultrastrong and deep strong-coupling regimes. Moreover, we propose a scheme to simulate the nonlinear quantum Rabi model in all coupling regimes. This can be done via off-resonant nonlinear red- and blue-sideband interactions in a single trapped ion, yielding applications as a dynamical quantum filter.

Poole-Frenkel effect in sputter-deposited CuAlO2+x nanocrystals

NASA Astrophysics Data System (ADS)

Narayan Banerjee, Arghya; Joo, Sang Woo

2013-04-01

Field-assisted thermionic emission within a sputter-deposited, nanocrystalline thin film of CuAlO2.06 is observed for the first time, and explained in terms of the Poole-Frenkel model. The presence of adsorbed oxygen ions as trap-states at the grain boundary regions of the nanostructured thin film is considered to manifest this phenomenon. Under an applied field, the barrier of the trap potential is lowered and thermal emission of charge carriers takes place at different sample temperatures to induce nonlinearity in the current (I)-voltage (V) characteristics of the nanomaterial. Fitting of the Poole-Frenkel model with the I-V data shows that the nonlinearity is effective above 50 V under the operating conditions. Calculations of the energy of the trap level, acceptor level and Fermi level reveal the existence of deep level trap-states and a shallow acceptor level with acceptor concentration considerably higher than the trap-states. Hall measurements confirm the p-type semiconductivity of the film, with a hole concentration around 1018 cm-3. Thermopower measurements give a room-temperature Seebeck coefficient around 130 μV K-1. This temperature-dependent conductivity enhancement within CuAlO2 nanomaterial may find interesting applications in transparent electronics and high-voltage applications for power supply networks.

Poole-Frenkel effect in sputter-deposited CuAlO(2+x) nanocrystals.

PubMed

Banerjee, Arghya Narayan; Joo, Sang Woo

2013-04-26

Field-assisted thermionic emission within a sputter-deposited, nanocrystalline thin film of CuAlO2.06 is observed for the first time, and explained in terms of the Poole-Frenkel model. The presence of adsorbed oxygen ions as trap-states at the grain boundary regions of the nanostructured thin film is considered to manifest this phenomenon. Under an applied field, the barrier of the trap potential is lowered and thermal emission of charge carriers takes place at different sample temperatures to induce nonlinearity in the current (I)-voltage (V) characteristics of the nanomaterial. Fitting of the Poole-Frenkel model with the I-V data shows that the nonlinearity is effective above 50 V under the operating conditions. Calculations of the energy of the trap level, acceptor level and Fermi level reveal the existence of deep level trap-states and a shallow acceptor level with acceptor concentration considerably higher than the trap-states. Hall measurements confirm the p-type semiconductivity of the film, with a hole concentration around 10(18) cm(-3). Thermopower measurements give a room-temperature Seebeck coefficient around 130 μV K(-1). This temperature-dependent conductivity enhancement within CuAlO2 nanomaterial may find interesting applications in transparent electronics and high-voltage applications for power supply networks.

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

NASA Astrophysics Data System (ADS)

Fengler, F. P. G.; Hoffmann, M.; Slesazeck, S.; Mikolajick, T.; Schroeder, U.

2018-05-01

Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far. Among crystallographic phase change contributions and oxygen vacancy diffusion, electron trapping as the origin has been discussed recently. In this publication, we provide evidence that the imprint is indeed caused by electron trapping into deep states at oxygen vacancies. This impedes the ferroelectric switching and causes a shift of the hysteresis. Moreover, we show that the wake-up mechanism can be caused by a local imprint of the domains in the pristine state by the very same root cause. The various domain orientations together with an electron trapping can cause a constriction of the hysteresis and an internal bias field in the pristine state. Additionally, we show that this local imprint can even cause almost anti-ferroelectric like behavior in ferroelectric films.

Nonvolatile memories using deep traps formed in HfO2 by Nb ion implantation

NASA Astrophysics Data System (ADS)

Choul Kim, Min; Oh Kim, Chang; Taek Oh, Houng; Choi, Suk-Ho; Belay, K.; Elliman, R. G.; Russo, S. P.

2011-03-01

We report nonvolatile memories (NVMs) based on deep-energy trap levels formed in HfO2 by metal ion implantation. A comparison of Nb- and Ta-implanted samples shows that suitable charge-trapping centers are formed in Nb-implanted samples, but not in Ta-implanted samples. This is consistent with density-functional theory calculations which predict that only Nb will form deep-energy levels in the bandgap of HfO2. Photocurrent spectroscopy exhibits characteristics consistent with one of the trap levels predicted in these calculations. Nb-implanted samples showing memory windows in capacitance-voltage (V) curves always exhibit current (I) peaks in I-V curves, indicating that NVM effects result from deep traps in HfO2. In contrast, Ta-implanted samples show dielectric breakdowns during the I-V sweeps between 5 and 11 V, consistent with the fact that no trap levels are present. For a sample implanted with a fluence of 1013 Nb cm-2, the charge losses after 104 s are ˜9.8 and ˜25.5% at room temperature (RT) and 85°C, respectively, and the expected charge loss after 10 years is ˜34% at RT, very promising for commercial NVMs.

On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S.

The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by amore » Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.« less

Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondarenko, Anton; Vyvenko, Oleg

2014-02-21

Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of trapsmore » refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL.« less

A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Jana, Dipankar; Sharma, T. K.

2017-07-01

AlGaN/GaN heterostructures are investigated by performing complementary spectroscopic measurements under novel experimental configurations. Distinct features related to the band edge of AlGaN and GaN layers are clearly observed in surface photovoltage spectroscopy (SPS) spectra. A few more SPS features, which are associated with defects in GaN, are also identified by performing the pump-probe SPS measurements. SPS results are strongly corroborated by the complementary photoluminescence and photoluminescence excitation (PLE) measurements. A correlation between the defect assisted SPS features and yellow luminescence (YL) peak is established by performing pump-probe SPS and PLE measurements. It is found that CN-ON donor complex is responsible for the generation of YL peak in our sample. Further, the deep trap states are found to be present throughout the entire GaN epilayer. It is also noticed that the deep trap states lying at the GaN/Fe-GaN interface make a strong contribution to the YL feature. A phenomenological model is proposed to explain the intensity dependence of the YL feature and the corresponding SPS features in a pump-probe configuration, where a reasonable agreement between the numerical simulations and experimental results is achieved.

Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gelczuk, Ł., E-mail: lukasz.gelczuk@pwr.edu.pl; Kudrawiec, R., E-mail: robert.kudrawiec@pwr.edu.pl; Henini, M.

2014-07-07

Deep level traps in as-grown and annealed n-GaNAs layers (doped with Si) of various nitrogen concentrations (N=0.2%, 0.4%, 0.8%, and 1.2%) were investigated by deep level transient spectroscopy. In addition, optical properties of GaNAs layers were studied by photoluminescence and contactless electroreflectance. The identification of N- and host-related traps has been performed on the basis of band gap diagram [Kudrawiec, Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of electron traps of the same microscopic nature decreases with the rise of nitrogen concentration in accordance with the N-related shift of the conduction band towards trap levels.more » The application of this diagram has allowed to investigate the evolution of donor traps in GaNAs upon annealing. In general, it was observed that the concentration of N- and host-related traps decreases after annealing and PL improves very significantly. However, it was also observed that some traps are generated due to annealing. It explains why the annealing conditions have to be carefully optimized for this material system.« less

Isothermal relaxation current and microstructure changes of thermally aged polyester films impregnated by epoxy resin

NASA Astrophysics Data System (ADS)

Jiang, Xiongwei; Sun, Potao; Peng, Qingjun; Sima, Wenxia

2018-01-01

In this study, to understand the effect of thermal aging on polymer films degradation, specimens of polyester films impregnated by epoxy resin with different thermal aging temperatures (80 and 130 °C) and aging times (500, 1600, 2400 and 3000 h) are prepared, then charge de-trapping properties of specimens are investigated via the isothermal relaxation current (IRC) measurement, the distributions of trap level and its corresponding density are obtained based on the modified IRC model. It is found that the deep trap density increases remarkably at the beginning of thermal aging (before 1600 h), but it decreases obviously as the aging degree increases. At elevated aging temperature and, in particular considering the presence of air gap between two-layer insulation, the peak densities of deep traps decrease more significant in the late period of aging. It can be concluded that it is the released energy from de-trapping process leads to the fast degradation of insulation. Moreover, after thermal aging, the microstructure changes of crystallinity and molecular structures are analyzed via the x-ray diffraction experiment and Fourier transform infrared spectrometer. The results indicate that the variation of the deep trap density is closely linked with the changes of microstructure, a larger interface of crystalline/amorphous phase, more defects and broken chains caused by thermal aging form higher deep trap density stored in the samples.

Why Chemical Vapor Deposition Grown MoS2 Samples Outperform Physical Vapor Deposition Samples: Time-Domain ab Initio Analysis.

PubMed

Li, Linqiu; Long, Run; Prezhdo, Oleg V

2018-06-13

Two-dimensional transition metal dichalcogenides (TMDs) have drawn strong attention due to their unique properties and diverse applications. However, TMD performance depends strongly on material quality and defect morphology. Experiments show that samples grown by chemical vapor deposition (CVD) outperform those obtained by physical vapor deposition (PVD). Experiments also show that CVD samples exhibit vacancy defects, while antisite defects are frequently observed in PVD samples. Our time-domain ab initio study demonstrates that both antisites and vacancies accelerate trapping and nonradiative recombination of charge carriers, but antisites are much more detrimental than vacancies. Antisites create deep traps for both electrons and holes, reducing energy gaps for recombination, while vacancies trap primarily holes. Antisites also perturb band-edge states, creating significant overlap with the trap states. In comparison, vacancy defects overlap much less with the band-edge states. Finally, antisites can create pairs of electron and hole traps close to the Fermi energy, allowing trapping by thermal activation from the ground state and strongly contributing to charge scattering. As a result, antisites accelerate charge recombination by more than a factor of 8, while vacancies enhance the recombination by less than a factor of 2. Our simulations demonstrate a general principle that missing atoms are significantly more benign than misplaced atoms, such as antisites and adatoms. The study rationalizes the existing experimental data, provides theoretical insights into the diverse behavior of different classes of defects, and generates guidelines for defect engineering to achieve high-performance electronic, optoelectronic, and solar-cell devices.

Impact of Deepwater Horizon Spill on food supply to deep-sea benthos communities

USGS Publications Warehouse

Prouty, Nancy G.; Swarzenski, Pamela; Mienis, Furu; Duineveld, Gerald; Demopoulos, Amanda W.J.; Ross, Steve W.; Brooke, Sandra

2016-01-01

Deep-sea ecosystems encompass unique and often fragile communities that are sensitive to a variety of anthropogenic and natural impacts. After the 2010 Deepwater Horizon (DWH) oil spill, sampling efforts documented the acute impact of the spill on some deep-sea coral colonies. To investigate the impact of the DWH spill on quality and quantity of biomass delivered to the deep-sea, a suite of geochemical tracers (e.g., stable and radio-isotopes, lipid biomarkers, and compound specific isotopes) was measured from monthly sediment trap samples deployed near a high-density deep-coral site in the Viosca Knoll area of the north-central Gulf of Mexico prior to (Oct-2008 to Sept-2009) and after the spill (Oct-10 to Sept-11). Marine (e.g., autochthonous) sources of organic matter dominated the sediment traps in both years, however after the spill, there was a pronounced reduction in marinesourced OM, including a reduction in marine-sourced sterols and n-alkanes and a concomitant decrease in sediment trap organic carbon and pigment flux. Results from this study indicate a reduction in primary production and carbon export to the deep-sea in 2010-2011, at least 6-18 months after the spill started. Whereas satellite observations indicate an initial increase in phytoplankton biomass, results from this sediment trap study define a reduction in primary production and carbon export to the deep-sea community. In addition, a dilution from a low-14C carbon source (e.g., petrocarbon) was detected in the sediment trap samples after the spill, in conjunction with a change in the petrogenic composition. The data presented here fills a critical gap in our knowledge of biogeochemical processes and sub-acute impacts to the deep-sea that ensued after the 2010 DWH spill.

Electrical characterization of plasma-grown oxides on gallium arsenide

NASA Technical Reports Server (NTRS)

Hshieh, F. I.; Bhat, K. N.; Ghandhi, S. K.; Borrego, J. M.

1985-01-01

Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

The impact of nano-coating on surface charge accumulation of epoxy resin insulator: characteristic and mechanism

NASA Astrophysics Data System (ADS)

Qi, Bo; Gao, Chunjia; Lv, Yuzhen; Li, Chengrong; Tu, Youping; Xiong, Jun

2018-06-01

The flashover phenomenon of the insulator is the main cause for insulating failure of GIS/GIL, and one of the most critical impacting factors is the accumulation of surface charge. The common methods to restrain the surface charge accumulation are reviewed in this paper. Through the reasonable comparison and analysis of these methods, nano-coatings for the insulator were selected as a way to restrain the surface charge accumulation. Based on this, six nano-coated epoxy resin samples with different concentrations of P25-TiO2 nanoparticles were produced. A high precision 3D surface charge measurement system was developed in this paper with a spatial resolution of 4.0 mm2 and a charge resolution of 0.01 µC (m2 · mV)‑1. The experimental results for the epoxy resin sample showed that with the concentration of nanoparticles of the coating material increasing, the surface charge density tended to first decrease and then increase. In the sample coated with 0.5% concentration of nanoparticles, the suppression effect is the optimum, leading to a 63.8% reduction of charge density under DC voltage. The application test for actual nano-coated GIS/GIL basin insulator indicated that the maximum suppression degree for the charge density under DC voltage could reach 48.3%, while it could reach 22.2% for switching impulse voltage and 12.5% for AC context. The control mechanism of nano-coatings on charge accumulation was proposed based on the analysis for surface morphology features and traps characteristics; the shallow traps dominate in the migration of charges while the deep traps operate on the charge accumulation. With the concentration of nanoparticles in nano-coating material mounting up, the density of shallow traps continuously increases, while for deep traps, it first decreases and then increases. For the sample with 0.5% concentration of nanoparticles coated, the competition between shallow traps and deep traps comes to the most balanced state, producing the most significant suppression impact on surface charge accumulation.

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk

2015-03-02

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes ofmore » both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.« less

Eliminating degradation and uncovering ion-trapping dynamics in electrochromic WO3 thin films

PubMed Central

Wen, Rui-Tao; Granqvist, Claes G.; Niklasson, Gunnar A.

2015-01-01

Amorphous WO3 thin films are of keen interest as cathodic electrodes in transmittance-modulating electrochromic devices. However, these films suffer from ion-trapping-induced degradation of optical modulation and reversibility upon extended Li+-ion exchange. Here, we demonstrate that ion-trapping-induced degradation, which is commonly believed to be irreversible, can be successfully eliminated by constant-current-driven de-trapping, i.e., WO3 films can be rejuvenated and regain their initial highly reversible electrochromic performance. Pronounced ion-trapping occurs when x exceeds ~0.65 in LixWO3 during ion insertion. We find two main kinds of Li+-ion trapping sites (intermediate and deep) in WO3, where the intermediate ones are most prevalent. Li+-ions can be completely removed from intermediate traps but are irreversibly bound in deep traps. Our results provide a general framework for developing and designing superior electrochromic materials and devices. PMID:26259104

Robust vortex lines, vortex rings, and hopfions in three-dimensional Bose-Einstein condensates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bisset, R. N.; Wang, Wenlong; Ticknor, Christopher

Performing a systematic Bogoliubov–de Gennes spectral analysis, we illustrate that stationary vortex lines, vortex rings, and more exotic states, such as hopfions, are robust in three-dimensional atomic Bose-Einstein condensates, for large parameter intervals. Importantly, we find that the hopfion can be stabilized in a simple parabolic trap, without the need for trap rotation or inhomogeneous interactions. We supplement our spectral analysis by studying the dynamics of such stationary states; we find them to be robust against significant perturbations of the initial state. In the unstable regimes, we not only identify the unstable mode, such as a quadrupolar or hexapolar mode,more » but we also observe the corresponding instability dynamics. Moreover, deep in the Thomas-Fermi regime, we investigate the particlelike behavior of vortex rings and hopfions.« less

Robust vortex lines, vortex rings, and hopfions in three-dimensional Bose-Einstein condensates

DOE PAGES

Bisset, R. N.; Wang, Wenlong; Ticknor, Christopher; ...

2015-12-07

Performing a systematic Bogoliubov–de Gennes spectral analysis, we illustrate that stationary vortex lines, vortex rings, and more exotic states, such as hopfions, are robust in three-dimensional atomic Bose-Einstein condensates, for large parameter intervals. Importantly, we find that the hopfion can be stabilized in a simple parabolic trap, without the need for trap rotation or inhomogeneous interactions. We supplement our spectral analysis by studying the dynamics of such stationary states; we find them to be robust against significant perturbations of the initial state. In the unstable regimes, we not only identify the unstable mode, such as a quadrupolar or hexapolar mode,more » but we also observe the corresponding instability dynamics. Moreover, deep in the Thomas-Fermi regime, we investigate the particlelike behavior of vortex rings and hopfions.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yanhong; Gao, Ping; Li, La

Pure Si{sub x}C{sub 1−x} (x > 0.5) and B-containing Si{sub x}C{sub 1−x} (x > 0.5) based resistive switching devices (RSD) with the structure of Ag/Si{sub x}C{sub 1−x}/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/ de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into Si{sub x}C{sub 1−x}, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for themore » SiC-based RSD, which have a potential application in extreme ambient conditions.« less

Cl-doping of Te-rich CdTe: Complex formation, self-compensation and self-purification from first principles

NASA Astrophysics Data System (ADS)

Lindström, A.; Klintenberg, M.; Sanyal, B.; Mirbt, S.

2015-08-01

The coexistence in Te-rich CdTe of substitutional Cl-dopants, ClTe, which act as donors, and Cd vacancies, VC d - 1 , which act as electron traps, was studied from first principles utilising the HSE06 hybrid functional. We find ClTe to preferably bind to VC d - 1 and to form an acceptor complex, (ClTe-VCd)-1. The complex has a (0,-1) charge transfer level close to the valence band and shows no trap state (deep level) in the band gap. During the complex formation, the defect state of VCd-1 is annihilated and leaves the Cl-doped CdTe bandgap without any trap states (self-purification). We calculate Cl-doped CdTe to be semi-insulating with a Fermi energy close to midgap. We calculate the formation energy of the complex to be sufficiently low to allow for spontanous defect formation upon Cl-doping (self-compensation). In addition, we quantitatively analyse the geometries, DOS, binding energies and formation energies of the (ClTe-VCd) complexes.

The use (and misuse) of sediment traps in coral reef environments: theory, observations, and suggested protocols

NASA Astrophysics Data System (ADS)

Storlazzi, C. D.; Field, M. E.; Bothner, M. H.

2011-03-01

Sediment traps are commonly used as standard tools for monitoring "sedimentation" in coral reef environments. In much of the literature where sediment traps were used to measure the effects of "sedimentation" on corals, it is clear from deployment descriptions and interpretations of the resulting data that information derived from sediment traps has frequently been misinterpreted or misapplied. Despite their widespread use in this setting, sediment traps do not provide quantitative information about "sedimentation" on coral surfaces. Traps can provide useful information about the relative magnitude of sediment dynamics if trap deployment standards are used. This conclusion is based first on a brief review of the state of knowledge of sediment trap dynamics, which has primarily focused on traps deployed high above the seabed in relatively deep water, followed by our understanding of near-bed sediment dynamics in shallow-water environments that characterize coral reefs. This overview is followed by the first synthesis of near-bed sediment trap data collected with concurrent hydrodynamic information in coral reef environments. This collective information is utilized to develop nine protocols for using sediment traps in coral reef environments, which focus on trap parameters that researchers can control such as trap height ( H), trap mouth diameter ( D), the height of the trap mouth above the substrate ( z o ), and the spacing between traps. The hydrodynamic behavior of sediment traps and the limitations of data derived from these traps should be forefront when interpreting sediment trap data to infer sediment transport processes in coral reef environments.

The use (and misuse) of sediment traps in coral reef environments: Theory, observations, and suggested protocols

USGS Publications Warehouse

Storlazzi, C.D.; Field, M.E.; Bothner, Michael H.

2011-01-01

Sediment traps are commonly used as standard tools for monitoring “sedimentation” in coral reef environments. In much of the literature where sediment traps were used to measure the effects of “sedimentation” on corals, it is clear from deployment descriptions and interpretations of the resulting data that information derived from sediment traps has frequently been misinterpreted or misapplied. Despite their widespread use in this setting, sediment traps do not provide quantitative information about “sedimentation” on coral surfaces. Traps can provide useful information about the relative magnitude of sediment dynamics if trap deployment standards are used. This conclusion is based first on a brief review of the state of knowledge of sediment trap dynamics, which has primarily focused on traps deployed high above the seabed in relatively deep water, followed by our understanding of near-bed sediment dynamics in shallow-water environments that characterize coral reefs. This overview is followed by the first synthesis of near-bed sediment trap data collected with concurrent hydrodynamic information in coral reef environments. This collective information is utilized to develop nine protocols for using sediment traps in coral reef environments, which focus on trap parameters that researchers can control such as trap height (H), trap mouth diameter (D), the height of the trap mouth above the substrate (z o ), and the spacing between traps. The hydrodynamic behavior of sediment traps and the limitations of data derived from these traps should be forefront when interpreting sediment trap data to infer sediment transport processes in coral reef environments.

Role of bond adaptability in the passivation of colloidal quantum dot solids.

PubMed

Thon, Susanna M; Ip, Alexander H; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W; Carey, Graham H; Masala, Silvia; Sargent, Edward H

2013-09-24

Colloidal quantum dot (CQD) solids are attractive materials for photovoltaic devices due to their low-cost solution-phase processing, high absorption cross sections, and their band gap tunability via the quantum size effect. Recent advances in CQD solar cell performance have relied on new surface passivation strategies. Specifically, cadmium cation passivation of surface chalcogen sites in PbS CQDs has been shown to contribute to lowered trap state densities and improved photovoltaic performance. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority carrier mobility, and photovoltaic power conversion efficiency. We show that trap passivation and midgap density of states determine photovoltaic device performance and are strongly influenced by the choice of metal cation. Supported by density functional theory simulations, we propose a model for the role of cations, a picture wherein metals offering the shallowest electron affinities and the greatest adaptability in surface bonding configurations eliminate both deep and shallow traps effectively even in submonolayer amounts. This work illustrates the importance of materials choice in designing a flexible passivation strategy for optimum CQD device performance.

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

NASA Astrophysics Data System (ADS)

Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

2017-12-01

In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

Canyon effect and seasonal variability of deep-sea organisms in the NW Mediterranean: Synchronous, year-long captures of ;swimmers; from near-bottom sediment traps in a submarine canyon and its adjacent open slope

NASA Astrophysics Data System (ADS)

Romano, C.; Flexas, M. M.; Segura, M.; Román, S.; Bahamon, N.; Gili, J. M.; Sanchez-Vidal, A.; Martin, D.

2017-11-01

Numerous organisms, including both passive sinkers and active migrators, are captured in sediment traps together with sediments. By capturing these "swimmers", the traps become an extraordinarily tool to obtain relevant information on the biodiversity and dynamics of deep-sea organisms. Here we analyze near-bottom swimmers larger than 500 μm and their fluxes collected from eight near-bottom sediment traps installed on instrumented moorings deployed nearby Blanes Canyon (BC). Our data, obtained from November 2008 to October 2009 with a sampling rate of 15 days, constitutes the first year-long, continuous time series of the whole swimmers' community collected at different traps and bottom depths (from 300 m to 1800 m) inside a submarine canyon and on its adjacent open slope (OS). The traps captured 2155 specimens belonging to 70 taxa, with Crustacea (mainly Copepoda) and Annelida Polychaeta accounting for more than 90% of the total abundance. Almost half of the identified taxa (33) were only present in BC traps, where mean annual swimmer fluxes per trap were almost one order of magnitude higher than in the OS ones. Temporal variability in swimmer fluxes was more evident in BC than in OS. Fluxes dropped in winter (in coincidence with the stormy period in the region) and remained low until the following spring. In spring, there was a switch in taxa composition, including an increase of planktonic organisms. Additionally, we report drastic effects of extreme events, such as major storms, on deep-sea fauna. The impact of such extreme events along submarine canyon systems calls to rethink the influence of climate-driven phenomena on deep-sea ecosystems and, consequently, on their living resources.

Deep blue exciplex organic light-emitting diodes with enhanced efficiency; P-type or E-type triplet conversion to singlet excitons?

PubMed

Jankus, Vygintas; Chiang, Chien-Jung; Dias, Fernando; Monkman, Andrew P

2013-03-13

Simple trilayer, deep blue, fluorescent exciplex organic light-emitting diodes (OLEDs) are reported. These OLEDs emit from an exciplex state formed between the highest occupied molecular orbital (HOMO) of N,N'-bis(1-naphthyl)N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) and lowest unoccupied molecular orbital (LUMO) of 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi) and the NPB singlet manifold, yielding 2.7% external quantum efficiency at 450 nm. It is shown that the majority of the delayed emission in electroluminescence arises from P-type triplet fusion at NPB sites not E-type reverse intersystem crossing because of the presence of the NPB triplet state acting as a deep trap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Maximization of permanent trapping of CO{sub 2} and co-contaminants in the highest-porosity formations of the Rock Springs Uplift (Southwest Wyoming): experimentation and multi-scale modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Piri, Mohammad

2014-03-31

Under this project, a multidisciplinary team of researchers at the University of Wyoming combined state-of-the-art experimental studies, numerical pore- and reservoir-scale modeling, and high performance computing to investigate trapping mechanisms relevant to geologic storage of mixed scCO{sub 2} in deep saline aquifers. The research included investigations in three fundamental areas: (i) the experimental determination of two-phase flow relative permeability functions, relative permeability hysteresis, and residual trapping under reservoir conditions for mixed scCO{sub 2}-­brine systems; (ii) improved understanding of permanent trapping mechanisms; (iii) scientifically correct, fine grid numerical simulations of CO{sub 2} storage in deep saline aquifers taking into account themore » underlying rock heterogeneity. The specific activities included: (1) Measurement of reservoir-­conditions drainage and imbibition relative permeabilities, irreducible brine and residual mixed scCO{sub 2} saturations, and relative permeability scanning curves (hysteresis) in rock samples from RSU; (2) Characterization of wettability through measurements of contact angles and interfacial tensions under reservoir conditions; (3) Development of physically-­based dynamic core-­scale pore network model; (4) Development of new, improved high-­performance modules for the UW-­team simulator to provide new capabilities to the existing model to include hysteresis in the relative permeability functions, geomechanical deformation and an equilibrium calculation (Both pore-­ and core-­scale models were rigorously validated against well-­characterized core-­ flooding experiments); and (5) An analysis of long term permanent trapping of mixed scCO{sub 2} through high-­resolution numerical experiments and analytical solutions. The analysis takes into account formation heterogeneity, capillary trapping, and relative permeability hysteresis.« less

Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

NASA Astrophysics Data System (ADS)

Bubel, S.; Chabinyc, M. L.

2013-06-01

The electronic density of states in metal oxide semiconductors like amorphous zinc oxide (a-ZnO) and its ternary and quaternary oxide alloys with indium, gallium, tin, or aluminum are different from amorphous silicon, or disordered materials such as pentacene, or P3HT. Many ZnO based semiconductors exhibit a steep decaying density of acceptor tail states (trap DOS) and a Fermi level (EF) close to the conduction band energy (EC). Considering thin film transistor (TFT) operation in accumulation mode, the quasi Fermi level for electrons (Eq) moves even closer to EC. Classic analytic TFT simulations use the simplification EC-EF> `several'kT and cannot reproduce exponential tail states with a characteristic energy smaller than 1/2 kT. We demonstrate an analytic model for tail and deep acceptor states, valid for all amorphous metal oxides and include the effect of trap assisted hopping instead of simpler percolation or mobility edge models, to account for the observed field dependent mobility.

Hot, deep origin of petroleum: deep basin evidence and application

USGS Publications Warehouse

Price, Leigh C.

1978-01-01

Use of the model of a hot deep origin of oil places rigid constraints on the migration and entrapment of crude oil. Specifically, oil originating from depth migrates vertically up faults and is emplaced in traps at shallower depths. Review of petroleum-producing basins worldwide shows oil occurrence in these basins conforms to the restraints of and therefore supports the hypothesis. Most of the world's oil is found in the very deepest sedimentary basins, and production over or adjacent to the deep basin is cut by or directly updip from faults dipping into the basin deep. Generally the greater the fault throw the greater the reserves. Fault-block highs next to deep sedimentary troughs are the best target areas by the present concept. Traps along major basin-forming faults are quite prospective. The structural style of a basin governs the distribution, types, and amounts of hydrocarbons expected and hence the exploration strategy. Production in delta depocenters (Niger) is in structures cut by or updip from major growth faults, and structures not associated with such faults are barren. Production in block fault basins is on horsts next to deep sedimentary troughs (Sirte, North Sea). In basins whose sediment thickness, structure and geologic history are known to a moderate degree, the main oil occurrences can be specifically predicted by analysis of fault systems and possible hydrocarbon migration routes. Use of the concept permits the identification of significant targets which have either been downgraded or ignored in the past, such as production in or just updip from thrust belts, stratigraphic traps over the deep basin associated with major faulting, production over the basin deep, and regional stratigraphic trapping updip from established production along major fault zones.

A comparison of point defects in Cd1-xZnxTe1-ySey crystals grown by Bridgman and traveling heater methods

NASA Astrophysics Data System (ADS)

Gul, R.; Roy, U. N.; Camarda, G. S.; Hossain, A.; Yang, G.; Vanier, P.; Lordi, V.; Varley, J.; James, R. B.

2017-03-01

In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.

Study of the Phototransference in GR-200 Dosimetric Material and its Convenience for Dose Re-estimation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baly, L.; Otazo, M. R.; Molina, D.

2006-09-08

A study of the phototransference of charges from deep to dosimetric traps in GR-200 material is presented and its convenience for dose re-estimation in the dose range between 2 and 100mSv is also analyzed. The recovering coefficient (RC) defined as the ratio between the phototransferred thermoluminescence (PTTL) and the original thermoluminescence (TL) of the dosimetric trap was used to evaluate the ratio of phototransferred charges from deep traps and the original charges in the dosimetric traps. The results show the convenience of this method for dose re-estimation for this material in the selected range of doses.

Simply actuated closure for a pressure vessel - Design for use to trap deep-sea animals

NASA Technical Reports Server (NTRS)

Yayanos, A. A.

1977-01-01

A pressure vessel is described that can be closed by a single translational motion within 1 sec. The vessel is a key component of a trap for small marine animals and operates automatically on the sea floor. As the vessel descends to the sea floor, it is subjected both internally and externally to the high pressures of the deep sea. The mechanism for closing the pressure vessel on the sea floor is activated by the timed release of the ballast which was used to sink the trap. As it rises to the sea surface, the internal pressure of the vessel remains near the value present on the sea floor. The pressure vessel has been used in simulated ocean deployments and in the deep ocean (9500 m) with a 75%-85% retention of the deep-sea pressure. Nearly 100% retention of pressure can be achieved by using an accumulator filled with a gas.

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

2018-04-01

In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

Optical characterization of wide-gap detector-grade semiconductors

NASA Astrophysics Data System (ADS)

Elshazly, Ezzat S.

Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd1-xZnxTe, x˜0.1) and Thallium Bromide (TlBr), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and TlBr as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064nm wavelength and 7ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300K to 110K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (TlBr) and compared with the results for cadmium zinc telluride (CZT) in a temperature range from 300K to 110K. The experimental data was analyzed using a trapping model. In CZT, because the majority carrier concentration is close to the intrinsic carrier concentration, the trapping time increases exponentially as the temperature decreases below about 160K. While, in TlBr, the majority carrier concentration is many orders of magnitude greater than the intrinsic carrier concentration and the trapping time followed a 1T temperature dependence over the range of temperatures studied. The results of the model suggest that a moderately deep compensation center, located approximately 200 meV from the middle of the bandgap, could be used to significantly increase the room temperature trapping time in TlBr. The results of this model demonstrate that the room temperature trapping time in TlBr can, in principle, approach 0.1ms through the introduction of a moderately deep compensation level but without decreasing the overall trap concentration. This strategy is not possible in CZT, because the band gap is too small to use a moderately deep compensation level while still maintaining high material resistivity. Carrier trapping times were measured in three polycrystalline TlBr samples produced by melting commercial TlBr beads in a sealed quartz ampoule for two hours at three different temperatures near the melting point. The trapping time decreased with increasing melting temperature, presumably due to the thermal generation of a trap state.

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE PAGES

Gul, R.; Roy, U. N.; Camarda, G. S.; ...

2017-03-28

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, R.; Roy, U. N.; Camarda, G. S.

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

NASA Astrophysics Data System (ADS)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE PAGES

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

2018-03-13

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Growth control and design principles of self-assembled quantum dot multiple layer structures for photodetector applications

NASA Astrophysics Data System (ADS)

Asano, Tetsuya

Self-assembled quantum dots (SAQDs) formed by lattice-mismatch strain-driven epitaxy are currently the most advanced nanostructure-based platform for high performance optoelectronic applications such as lasers and photodetectors. While the QD lasers have realized the best performance in terms of threshold current and temperature stability, the performance of QD photodetectors (QDIPs) has not surpassed that of quantum well (QW) photodetectors. This is because the requirement of maximal photon absorption for photodetectors poses the challenge of forming an appropriately-doped large number of uniform multiple SAQD (MQD) layers with acceptable structural defect (dislocation etc.) density. This dissertation addresses this challenge and, through a combination of innovative approach to control of defects in MQD growth and judicious placement of SAQDs in a resonant cavity, shows that SAQD based quantum dot infrared photodetectors (QDIPs) can be made competitive with their quantum well counterparts. Specifically, the following major elements were accomplished: (i) the molecular beam epitaxy (MBE) growth of dislocation-free and uniform InAs/InAlGaAs/GaAs MQD strained structures up to 20-period, (ii) temperature-dependent photo- and dark-current based analysis of the electron density distribution inside the MQD structures for various doping schemes, (iii) deep level transient spectroscopy based identification of growth procedure dependent deleterious deep traps in SAQD structures and their reduction, and (iv) the use of an appropriately designed resonant cavity (RC) and judicious placement of the SAQD layers for maximal enhancement of photon absorption to realize over an order of magnitude enhancement in QDIP detectivity. The lattermost demonstration indicates that implementation of the growth approach and resonant cavity strategy developed here while utilizing the currently demonstrated MIR and LWIR QDIPs with detectivities > 10 10 cmHz1/2/W at ˜ 77 K will enable RC-QDIP with detectivites > 1011 cmHz1/2/W that become competitive with other photodetector technologies in the mid IR (3 -- 5 mum) and long wavelength IR (8 -- 12 mum) ranges with the added advantage of materials stability and normal incidence sensitivity. Extended defect-free and size-uniform MQD structures of shallow InAs on GaAs (001) SAQDs capped with In0.15Ga0.85As strain relief layers and separated by GaAs spacer layer were grown up to 20 periods employing a judicious combination of MBE and migration enhanced epitaxy (MEE) techniques and examined by detailed transmission electron microscopy studies to reveal the absence of detectable extended defects (dislocation density < ˜ 107 /cm2). Photoluminescence studies revealed high optical quality. As our focus was on mid-infrared detectors, the MQD structures were grown in n (GaAs) -- i (MQD) -- n (GaAs) structures providing electron occupancy in at least the quantum confined ground energy states of the SAQDs and thus photodetection based upon transitions to electron excited states. Bias and temperature-dependent dark and photocurrent measurements were carried out for a variety of doping profiles and the electron density spatial distribution was determined from the resulting band bending profiles. It is revealed that almost no free electrons are present in the middle SAQD layers in the 10-period and 20-period n--i--n QDIP structures, indicating the existence of a high density (˜1015/cm3) of negative charges which can be attributed to electrons trapped in deep levels. To examine the nature of these deep traps, samples suitable for deep level transient spectroscopy measurement were synthesized and examined. These studies, carried out for the first time for SAQDs, revealed that the deep traps are dominantly present in the GaAs overgrowth layers grown at 500°C by MBE. For structures involving GaAs overgrowths using MEE at temperatures as low as 350°C, the deep trap density in the GaAs overgrowth layer was found to be significantly reduced by factor of ˜ 20. Thus, employing MEE growth for GaAs spacer layers in n--i(20-period MQD)-- n QDIP structures, electrons could be provided to all the SAQDs owing to the significantly reduced deep trap density. Finally, for enhancement of the incident photon absorption, we designed and fabricated asymmetric Fabry-Perot resonant cavity-enhanced QDIPs. For effective enhancement, SAQDs with a narrow photoresponse in the 3 -- 5 mum infrared regime were realized utilizing [(AlAs)1(GaAs)4]4 short-period superlattices as the confining barrier layers. Incorporating such SAQDs in RC-QDIPs, we successfully demonstrated ˜ 10 times enhancement of the QDIP detectivity. As stated above, this makes RC-QDIPs containing QDIPs with the currently demonstrated detectivities of ˜ 1010 cmHz 1/2/W at ˜ 77 K competitive with other IR photodetector technologies.

Bond-center hydrogen in dilute Si1-xGex alloys: Laplace deep-level transient spectroscopy

NASA Astrophysics Data System (ADS)

Bonde Nielsen, K.; Dobaczewski, L.; Peaker, A. R.; Abrosimov, N. V.

2003-07-01

We apply Laplace deep-level transient spectroscopy in situ after low-temperature proton implantation into dilute Si1-xGex alloys and identify the deep donor state of hydrogen occupying a strained Si-Si bond-center site next to Ge. The activation energy of the electron emission from the donor is ˜158 meV when extrapolated to zero electrical field. We construct a configuration diagram of the Ge-strained site from formation and annealing data and deduce that alloying with ˜1% Ge does not significantly influence the low-temperature migration of hydrogen as compared to elemental Si. We observe two bond-center-type carbon-hydrogen centers and conclude that carbon impurities act as much stronger traps for hydrogen than the alloy Ge atoms.

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices

PubMed Central

Song, Younggul; Jeong, Hyunhak; Chung, Seungjun; Ahn, Geun Ho; Kim, Tae-Young; Jang, Jingon; Yoo, Daekyoung; Jeong, Heejun; Javey, Ali; Lee, Takhee

2016-01-01

The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems. PMID:27659298

Observations of seasonal variations in atmospheric greenhouse trapping and its enhancement at high sea surface temperature

NASA Technical Reports Server (NTRS)

Hallberg, Robert; Inamdar, Anand K.

1993-01-01

Greenhouse trapping is examined theoretically using a version of the radiative transfer equations that demonstrates how atmospheric greenhouse trapping can vary. Satellite observations of atmospheric greenhouse trapping are examined for four months representing the various seasons. The cause of the super greenhouse effect at the highest SSTs is examined, and four processes are found to contribute. The middle and upper troposphere must be particularly moist and the temperature lapse rate must be increasingly unstable over the warmest regions to explain the observed distribution of atmospheric greenhouse trapping. Since the highest SSTs are generally associated with deep convection, this suggests that deep convection acts to moisten the middle and upper troposphere in regions of the highest SSTs relative to other regions. The tropical atmospheric circulation acts to both increase the temperature lapse rate and greatly increase the atmospheric water vapor concentration with spatially increasing SST.

Doping Effect of Graphene Nanoplatelets on Electrical Insulation Properties of Polyethylene: From Macroscopic to Molecular Scale

PubMed Central

Jing, Ziang; Li, Changming; Zhao, Hong; Zhang, Guiling; Han, Baozhong

2016-01-01

The doping effect of graphene nanoplatelets (GNPs) on electrical insulation properties of polyethylene (PE) was studied by combining experimental and theoretical methods. The electric conduction properties and trap characteristics were tested for pure PE and PE/GNPs composites by using a direct measurement method and a thermal stimulated current (TSC) method. It was found that doping smaller GNPs is more beneficial to decrease the conductivity of PE/GNPs. The PE/GNPs composite with smaller size GNPs mainly introduces deep energy traps, while with increasing GNPs size, besides deep energy traps, shallow energy traps are also introduced. These results were also confirmed by density functional theory (DFT) and the non-equilibrium Green’s function (NEGF) method calculations. Therefore, doping small size GNPs is favorable for trapping charge carriers and enhancing insulation ability, which is suggested as an effective strategy in exploring powerful insulation materials. PMID:28773802

Quantum Simulation of the Quantum Rabi Model in a Trapped Ion

NASA Astrophysics Data System (ADS)

Lv, Dingshun; An, Shuoming; Liu, Zhenyu; Zhang, Jing-Ning; Pedernales, Julen S.; Lamata, Lucas; Solano, Enrique; Kim, Kihwan

2018-04-01

The quantum Rabi model, involving a two-level system and a bosonic field mode, is arguably the simplest and most fundamental model describing quantum light-matter interactions. Historically, due to the restricted parameter regimes of natural light-matter processes, the richness of this model has been elusive in the lab. Here, we experimentally realize a quantum simulation of the quantum Rabi model in a single trapped ion, where the coupling strength between the simulated light mode and atom can be tuned at will. The versatility of the demonstrated quantum simulator enables us to experimentally explore the quantum Rabi model in detail, including a wide range of otherwise unaccessible phenomena, as those happening in the ultrastrong and deep strong-coupling regimes. In this sense, we are able to adiabatically generate the ground state of the quantum Rabi model in the deep strong-coupling regime, where we are able to detect the nontrivial entanglement between the bosonic field mode and the two-level system. Moreover, we observe the breakdown of the rotating-wave approximation when the coupling strength is increased, and the generation of phonon wave packets that bounce back and forth when the coupling reaches the deep strong-coupling regime. Finally, we also measure the energy spectrum of the quantum Rabi model in the ultrastrong-coupling regime.

Light-activated photocurrent degradation and self-healing in perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nie, Wanyi; Blancon, Jean-Christophe; Neukirch, Amanda J.

Solution-processed organometallic perovskite solar cells have emerged as one of the most promising thin-film photovoltaic technology. But, a key challenge is their lack of stability over prolonged solar irradiation. Few studies have investigated the effect of light soaking on hybrid perovskites and have attributed the degradation in the optoelectronic properties to photochemical or field-assisted ion migration. We show that the slow photocurrent degradation in thin-film photovoltaic devices is due to the formation of light-activated meta-stable deep-level trap states. However, the devices can self-heal completely by resting them in the dark for <1 min or the degradation can be completely preventedmore » by operating the devices at 0 °C. Here, we investigate several physical mechanisms to explain the microscopic origin for the formation of these trap states, among which the creation of small polaronic states involving localized cooperative lattice strain and molecular orientations emerges as a credible microscopic mechanism requiring further detailed studies.« less

Light-activated photocurrent degradation and self-healing in perovskite solar cells

DOE PAGES

Nie, Wanyi; Blancon, Jean-Christophe; Neukirch, Amanda J.; ...

2016-05-16

Solution-processed organometallic perovskite solar cells have emerged as one of the most promising thin-film photovoltaic technology. But, a key challenge is their lack of stability over prolonged solar irradiation. Few studies have investigated the effect of light soaking on hybrid perovskites and have attributed the degradation in the optoelectronic properties to photochemical or field-assisted ion migration. We show that the slow photocurrent degradation in thin-film photovoltaic devices is due to the formation of light-activated meta-stable deep-level trap states. However, the devices can self-heal completely by resting them in the dark for <1 min or the degradation can be completely preventedmore » by operating the devices at 0 °C. Here, we investigate several physical mechanisms to explain the microscopic origin for the formation of these trap states, among which the creation of small polaronic states involving localized cooperative lattice strain and molecular orientations emerges as a credible microscopic mechanism requiring further detailed studies.« less

Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Peta, Koteswara Rao; Kim, Moon Deock

2018-01-01

The leakage current transport mechanism under reverse bias of Au/Ni/GaN Schottky diode is studied using temperature dependent current-voltage (I-V-T) and capacitance-voltage (C-V) characteristics. I-V measurement in this study is in the range of 140 K-420 K in steps of 10 K. A reduction in voltage dependent barrier height and a strong internal electric field in depletion region under reverse bias suggested electric field enhanced thermionic emission in carrier transport via defect states in Au/Ni/GaN SBD. A detailed analysis of reverse leakage current revealed two different predominant transport mechanisms namely variable-range hopping (VRH) and Poole-Frenkel (PF) emission conduction at low (<260 K) and high (>260 K) temperatures respectively. The estimated thermal activation energies (0.20-0.39 eV) from Arrhenius plot indicates a trap assisted tunneling of thermally activated electrons from a deep trap state into a continuum of states associated with each conductive threading dislocation.

Strategic Partnership for Research in Nanotechnology

DTIC Science & Technology

2008-07-21

Journal of Applied Physics, 2007. 101(5). 44. Leong, W.L., et al., Charging phenomena in pentacene -gold nanoparticle memory device. Applied Physics Letters...Agreement between experimental data and simulations strongly supports the presence of deep traps in the studied nanoparticles and highlights the ability...of SMS-EC to study energetics and dynamics of deep traps in organic materials at the nanoscale.[2] Other recent research has focused on how the

Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

PubMed

Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

2016-03-01

Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

The effects of nanoparticles and organic additives with controlled dispersion on dielectric properties of polymers: Charge trapping and impact excitation

NASA Astrophysics Data System (ADS)

Huang, Yanhui; Wu, Ke; Bell, Michael; Oakes, Andrew; Ratcliff, Tyree; Lanzillo, Nicholas A.; Breneman, Curt; Benicewicz, Brian C.; Schadler, Linda S.

2016-08-01

This work presents a comprehensive investigation into the effects of nanoparticles and organic additives on the dielectric properties of insulating polymers using reinforced silicone rubber as a model system. TiO2 and ZrO2 nanoparticles (d = 5 nm) were well dispersed into the polymer via a bimodal surface modification approach. Organic molecules with the potential of voltage stabilization were further grafted to the nanoparticle to ensure their dispersion. These extrinsic species were found to provide deep traps for charge carriers and exhibited effective charge trapping properties at a rather small concentration (˜1017 cm-3). The charge trapping is found to have the most significant effect on breakdown strength when the electrical stressing time is long enough that most charges are trapped in the deep states. To establish a quantitative correlation between the trap depth and the molecular properties, the electron affinity and ionization energy of each species were calculated by an ab initio method and were compared with the experimentally measured values. The correlation however remains elusive and is possibly complicated by the field effect and the electronic interactions between different species that are not considered in this computation. At high field, a super-linear increase of current density was observed for TiO2 filled composites and is likely caused by impact excitation due to the low excitation energy of TiO2 compared to ZrO2. It is reasoned that the hot charge carriers with energies greater than the excitation energy of TiO2 may excite an electron-hole pair upon collision with the NP, which later will be dissociated and contribute to free charge carriers. This mechanism can enhance the energy dissipation and may account for the retarded electrical degradation and breakdown of TiO2 composites.

The effects of nanoparticles and organic additives with controlled dispersion on dielectric properties of polymers: Charge trapping and impact excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S.; Wu, Ke

This work presents a comprehensive investigation into the effects of nanoparticles and organic additives on the dielectric properties of insulating polymers using reinforced silicone rubber as a model system. TiO{sub 2} and ZrO{sub 2} nanoparticles (d = 5 nm) were well dispersed into the polymer via a bimodal surface modification approach. Organic molecules with the potential of voltage stabilization were further grafted to the nanoparticle to ensure their dispersion. These extrinsic species were found to provide deep traps for charge carriers and exhibited effective charge trapping properties at a rather small concentration (∼10{sup 17} cm{sup −3}). The charge trapping is found to havemore » the most significant effect on breakdown strength when the electrical stressing time is long enough that most charges are trapped in the deep states. To establish a quantitative correlation between the trap depth and the molecular properties, the electron affinity and ionization energy of each species were calculated by an ab initio method and were compared with the experimentally measured values. The correlation however remains elusive and is possibly complicated by the field effect and the electronic interactions between different species that are not considered in this computation. At high field, a super-linear increase of current density was observed for TiO{sub 2} filled composites and is likely caused by impact excitation due to the low excitation energy of TiO{sub 2} compared to ZrO{sub 2}. It is reasoned that the hot charge carriers with energies greater than the excitation energy of TiO{sub 2} may excite an electron-hole pair upon collision with the NP, which later will be dissociated and contribute to free charge carriers. This mechanism can enhance the energy dissipation and may account for the retarded electrical degradation and breakdown of TiO{sub 2} composites.« less

Lifetime degradation of n-type Czochralski silicon after hydrogenation

NASA Astrophysics Data System (ADS)

Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

2018-04-01

Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

Philippine microplate tectonics and hydrocarbon exploration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallagher, J.J. Jr.

1986-07-01

Hydrocarbon traps in the Philippine Islands developed during a long, complex history of microplate tectonics. Carbonate and clastic stratigraphic traps formed during Mesozoic and early Cenozoic rifting and drifting. Hydrocarbons, generated in deep rift basins, migrated to the traps during drifting. Later Cenozoic compressional tectonic activity and concomitant faulting enhanced some traps and destroyed others. Seismic data offshore from Palawan Island reveal the early trap histories. Later trap histories can be interpreted from seismic, outcrop, and remote-sensing data. Understanding the microplate tectonic history of the Philippines is the key to interpreting trap histories.

The nature of trapping sites and recombination centres in PVK and PVK-PBD electroluminescent matrices seen by spectrally resolved thermoluminescence

NASA Astrophysics Data System (ADS)

Glowacki, Ireneusz; Szamel, Zbigniew

2010-07-01

Two electroluminescent polymer matrices poly(N-vinylcarbazole) (PVK) and PVK with 40 wt% of 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) were studied using spectrally resolved thermoluminescence (SRTL) in the temperature range 15-325 K. The comparison of the SRTL results with the electroluminescence (EL) spectra has allowed identification of the localized (trapping) sites and the radiative recombination centres present in the investigated matrices. In the neat PVK films deep traps with a depth about 200 meV, related to triplet excimers dominate, while in the PVK-PBD (40 wt%) blend films the traps that are related to triplet exciplexes formed by the carbazole groups and the PBD molecules dominate. Depth of the traps in the PVK-PBD blend is somewhat lower than that in the neat PVK. An analysis of the EL spectra shows that in the PVK and in the PVK-PBD blend the dominant radiative centres are singlet excimers and singlet exciplexes, respectively. However, in the neat PVK some contributions of the triplet monomer and the triplet excimer states in the EL were also detected.

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Shu; Zhou, Chunhua; Jiang, Qimeng

2014-01-06

Thermally stimulated current (TSC) spectroscopy and high-voltage back-gating measurement are utilized to study GaN buffer traps specific to AlGaN/GaN lateral heterojunction structures grown on a low-resistivity Si substrate. Three dominating deep-level traps in GaN buffer with activation energies of ΔE{sub T1} ∼ 0.54 eV, ΔE{sub T2} ∼ 0.65 eV, and ΔE{sub T3} ∼ 0.75 eV are extracted from TSC spectroscopy in a vertical GaN-on-Si structure. High back-gate bias applied to the Si substrate could influence the drain current in an AlGaN/GaN-on-Si high-electron-mobility transistor in a way that cannot be explained with a simple field-effect model. By correlating the trap states identified in TSC with the back-gating measurement results, itmore » is proposed that the ionization/deionization of both donor and acceptor traps are responsible for the generation of buffer space charges, which impose additional modulation to the 2DEG channel.« less

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

NASA Astrophysics Data System (ADS)

Vagenas, N.; Giannopoulou, A.; Kounavis, P.

2015-01-01

This study demonstrates that the effect of light excitation on the density and the mobility of the majority carriers can be explored in organic semiconductors by modulated photocurrent spectroscopy. The spectra of phase and amplitude of the modulated photocurrent of pentacene films indicate a significant increase in the density of the photogenerated mobile holes (majority carriers). This increase is accompanied by a comparatively much smaller increase of the steady state photocurrent response which can be reconciled with a decrease in the mobility (μ) of holes. The decrease of μ is supported from an unusual increase of the Y/μ ratio of the out-of-phase modulated photocurrent (Y) signal to the mobility under light excitation. It is proposed that the mobile holes, which are generated from the dissociation of the light-created excitons more likely near the pentacene-substrate interface by electron trapping, populate grain boundaries charging them and producing a downward band bending. As a result, potential energy barriers are build up which limit the transport of holes interacting through trapping-detrapping with deep partially occupied traps in the charged grain boundaries. On the other hand, the transport of holes interacting through trapping-detrapping with empty traps is found unaffected.

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

2013-02-01

This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

Deep centers in AlGaN-based light emitting diode structures

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Mil'vidskii, M. G.; Usikov, A. S.; Pushnyi, B. V.; Lundin, W. V.

1999-10-01

Deep traps were studied in GaN homojunction and AlGaN/GaN heterojunction light emitting diode (LED) p-i-n structures by means of deep levels transient spectroscopy (DLTS), admittance and electroluminescence (EL) spectra measurements. It is shown that, in homojunction LED structures, the EL spectra comes from recombination involving Mg acceptors in-diffusing into the active i-layer. This Mg in-diffusion is strongly suppressed in heterostructures with the upper p-type layer containing about 5% of Al. As a result the main peak in the EL spectra of heterostructures is shifted toward higher energy compared to homojunctions. Joint doping of the i-layer with Zn and Si allows to shift the main EL peak to longer wavelength. The dominant electron traps observed in the studied LED structures had ionization energies of 0.55 and 0.85 eV. The dominant hole traps had apparent ionization energies of 0.85 and 0.4 eV. The latter traps were shown to be metastable and it is argued that they could be at least in part responsible for the persistent photoconductivity observed in p-GaN.

Band-Like Behavior of Localized States of Metal Silicide Precipitate in Silicon

NASA Astrophysics Data System (ADS)

Bondarenko, Anton; Vyvenko, Oleg

2018-03-01

Deep-level transient spectroscopy (DLTS) investigations of energy levels of charge-carrier traps associated with precipitates of metal silicide often show that they behave not like localized monoenergetic traps but as a continuous density of allowed states in the bandgap with fast carrier exchange between these states, so-called band-like behavior. This kind of behavior was ascribed to the dislocation loop bounding the platelet, which in addition exhibits an attractive potential caused by long-range elastic strain. In previous works, the presence of the dislocation-related deformation potential in combination with the external electric field of the Schottky diode was included to obtain a reasonable fit of the proposed model to experimental data. Another well-known particular property of extended defects—the presence of their own strong electric field in their vicinity that is manifested in the logarithmic kinetics of electron capture—was not taken into account. We derive herein a theoretical model that takes into account both the external electric field and the intrinsic electric field of dislocation self-charge as well as its deformation potential, which leads to strong temporal variation of the activation energy during charge-carrier emission. We performed numerical simulations of the DLTS spectra based on such a model for a monoenergetic trap, finding excellent agreement with available experimental data.

Formation of Deep Electron Trap by Yb3+ Codoping Leads into Super-Long Persistent Luminescence in Ce3+-doped Yttrium Aluminum Gallium Garnet Phosphors.

PubMed

Ueda, Jumpei; Miyano, Shun; Tanabe, Setsuhisa

2018-05-23

The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Cr 3+ compound is one of the brightest persistent phosphors, but its persistent luminescence (PersL) duration is not so long due to the relatively shallow Cr 3+ electron trap. Comparing the vacuum referred binding energy of the electron trapping state by Cr 3+ and those by lanthanide ions, we selected Yb 3+ as a deeper electron trapping center. The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Yb 3+ phosphors show Ce 3+ :5d→4f green persistent luminescence after ceasing blue light excitation. The formation of Yb 2+ was confirmed by the increased intensity of absorption at 585 nm during the charging process. This result indicates that the Yb 3+ ions act as electron traps by capturing an electron. From the thermoluminescence glow curves, it was found the Yb 3+ trap makes much deeper electron trap with 1.01 eV depth than the Cr 3+ electron trap with 0.81 eV depth. This deeper Yb 3+ trap provides much slower detrapping rate of filled electron traps than the Cr 3+ -codoped persistent phosphor. In addition, by preparing transparent ceramics and optimizing Ce 3+ and Yb 3+ concentrations, the Y 3 Al 2 Ga 3 O 12 :Ce 3+ (0.2%)-Yb 3+ (0.1%) as-made transparent ceramic phosphor showed super long persistent luminescence for over 138.8 hours after ceasing blue light charging.

Magnetic field fluctuations analysis for the ion trap implementation of the quantum Rabi model in the deep strong coupling regime

NASA Astrophysics Data System (ADS)

Puebla, Ricardo; Casanova, Jorge; Plenio, Martin B.

2018-03-01

The dynamics of the quantum Rabi model (QRM) in the deep strong coupling regime is theoretically analyzed in a trapped-ion set-up. Recognizably, the main hallmark of this regime is the emergence of collapses and revivals, whose faithful observation is hindered under realistic magnetic dephasing noise. Here, we discuss how to attain a faithful implementation of the QRM in the deep strong coupling regime which is robust against magnetic field fluctuations and at the same time provides a large tunability of the simulated parameters. This is achieved by combining standing wave laser configuration with continuous dynamical decoupling. In addition, we study the role that amplitude fluctuations play to correctly attain the QRM using the proposed method. In this manner, the present work further supports the suitability of continuous dynamical decoupling techniques in trapped-ion settings to faithfully realize different interacting dynamics.

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

NASA Astrophysics Data System (ADS)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.

2015-10-28

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gapmore » states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.« less

Collaborative Research and Development (CR&D). Task Order 0036: Physical and Chemical Processes of Operating Electronic Devices

DTIC Science & Technology

2006-09-01

actually seen. A. Hierro , … S. A. Ringel et al., Phys. Stat. Sol (b) 228, 937 (2001). Ohio State U. Use DLTS and DLOS (Deep Level Optical Spectroscopy...to threading dislocations. Also see A. Hierro et al., APL 76, 3064 (2000), where traps at EC-ET=0.58-0.62, 1.35, 2.57-2.64, 3.22eV are seen in GaN

The whitefish fishery of Lakes Huron and Michigan with special reference to the deep-trap-net fishery

USGS Publications Warehouse

Van Oosten, John; Hile, Ralph; Jobes, Frank W.

1946-01-01

This study of the whitefish fishery of Lakes Huron and Michigan includes: (1) a review of the available statistics of production, 1879-1942; (2) a detailed analysis of the annual fluctuations in the production and abundance of whitefish and in the intensity of the whitefish fishery in the State of Michigan waters of the lakes, 1929-1942, with special reference to the effects of fishing with deep trap nets; (3) an account of the bathymetric distribution and vertical movements of whitefish and certain other species; and (4) a report of field observations made in 1931 and 1932, as related particularly to the destruction of undersized whitefish by pound nets and deep trap nets. The main body of the manuscript and appendices A, B, and C, completed in March 1942, contain statistics through the year 1939. Since that time, records for the years 1940-1942 have become available. Because these additional data did not alter any of the conclusions of the manuscript but actually strengthened them, it was not deemed justifiable to expend the considerable amount of time and money that would be required to revise the study. The 1940-1942 records are therefore presented in appendix D. From a relatively high production in the earlier years of the period, 1879 to 1942, the yield of whitefish declined to a lower level about which the catch fluctuated until the late 1920's and early 1930's when a general increase in production occurred. This recent increase was higher and the subsequent decline more severe in the Michigan waters of Lake Huron than in other areas.

I-V-T analysis of radiation damage in high efficiency Si solar cells

NASA Technical Reports Server (NTRS)

Banerjee, S.; Anderson, W. A.; Rao, B. B.

1985-01-01

A detailed analysis of current-voltage characteristics of N(+)-P/P solar cells indicate that there is a combination of different mechanisms which results in an enhancement in the dark current and in turn deteriorates the photovoltaic performance of the solar cells after 1 MeV e(-) irradiation. The increase in the dark current is due to three effects, i.e., bulk recombination, space charge recombination by deep traps and space charge recombination through shallow traps. It is shown that the increase in bulk recombination current is about 2 to 3 orders of magnitude whereas space charge recombination current due to shallow traps increases only by an order or so and no space charge recombination through deep traps was observed after irradiation. Thus, in order to improve the radiation hardness of these devices, bulk properties should be preserved.

Quenched-in defects in flashlamp-annealed silicon

NASA Technical Reports Server (NTRS)

Borenstein, J. T.; Jones, J. T.; Corbett, J. W.; Oehrlein, G. S.; Kleinhenz, R. L.

1986-01-01

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Influence of oxygen vacancy on the electronic structure of CaCu3Ti4O12 and its deep-level vacancy trap states by first-principle calculation

NASA Astrophysics Data System (ADS)

Xiao, H. B.; Yang, C. P.; Huang, C.; Xu, L. F.; Shi, D. W.; Marchenkov, V. V.; Medvedeva, I. V.; Bärner, K.

2012-03-01

The electronic structure, formation energy, and transition energy levels of intrinsic defects have been studied using the density-functional method within the generalized gradient approximation for neutral and charged oxygen vacancy in CaCu3Ti4O12 (CCTO). It is found that oxygen vacancies with different charge states can be formed in CCTO under both oxygen-rich and poor conditions for nonequilibrium and higher-energy sintering processes; especially, a lower formation energy is obtained for poor oxygen environment. The charge transition level (0/1+) of the oxygen vacancy in CCTO is located at 0.53 eV below the conduction-band edge. The (1+/2+) transition occurs at 1.06 eV below the conduction-band edge. Oxygen vacancies of Vo1+ and Vo2+ are positive stable charge states in most gap regions and can act as a moderately deep donor for Vo1+ and a borderline deep for Vo2+, respectively. The polarization and dielectric constant are considerably enhanced by oxygen vacancy dipoles, due to the off-center Ti and Cu ions in CCTO.

An activity-based near-infrared glucuronide trapping probe for imaging β-glucuronidase expression in deep tissues.

PubMed

Cheng, Ta-Chun; Roffler, Steve R; Tzou, Shey-Cherng; Chuang, Kuo-Hsiang; Su, Yu-Cheng; Chuang, Chih-Hung; Kao, Chien-Han; Chen, Chien-Shu; Harn, I-Hong; Liu, Kuan-Yi; Cheng, Tian-Lu; Leu, Yu-Ling

2012-02-15

β-glucuronidase is an attractive reporter and prodrug-converting enzyme. The development of near-IR (NIR) probes for imaging of β-glucuronidase activity would be ideal to allow estimation of reporter expression and for personalized glucuronide prodrug cancer therapy in preclinical studies. However, NIR glucuronide probes are not yet available. In this work, we developed two fluorescent probes for detection of β-glucuronidase activity, one for the NIR range (containing IR-820 dye) and the other for the visible range [containing fluorescein isothiocyanate (FITC)], by utilizing a difluoromethylphenol-glucuronide moiety (TrapG) to trap the fluorochromes in the vicinity of the active enzyme. β-glucuronidase-mediated hydrolysis of the glucuronyl bond of TrapG generates a highly reactive alkylating group that facilitates the attachment of the fluorochrome to nucleophilic moieties located near β-glucuronidase-expressing sites. FITC-TrapG was selectively trapped on purified β-glucuronidase or β-glucuronidase-expressing CT26 cells (CT26/mβG) but not on bovine serum albumin or non-β-glucuronidase-expressing CT26 cells used as controls. β-glucuronidase-activated FITC-TrapG did not interfere with β-glucuronidase activity and could label bystander proteins near β-glucuronidase. Both FITC-TrapG and NIR-TrapG specifically imaged subcutaneous CT26/mβG tumors, but only NIR-TrapG could image CT26/mβG tumors transplanted deep in the liver. Thus NIR-TrapG may provide a valuable tool for visualizing β-glucuronidase activity in vivo.

Thermally-assisted optically stimulated luminescence from deep electron traps in α-Al2O3:C,Mg

NASA Astrophysics Data System (ADS)

Kalita, J. M.; Chithambo, M. L.; Polymeris, G. S.

2017-07-01

We report thermally-assisted optically stimulated luminescence (TA-OSL) in α-Al2O3:C,Mg. The OSL was measured at elevated temperatures between 50 and 240 °C from a sample preheated to 500 °C after irradiation to 100 Gy. That OSL could be measured even after the preheating is direct evidence of the existence of deep electron traps in α-Al2O3:C,Mg. The TA-OSL intensity goes through a peak with measurement temperature. The initial increase is ascribed to thermal assistance to optical stimulation whereas the subsequent decrease in intensity is deduced to reflect increasing incidences of non-radiative recombination, that is, thermal quenching. The activation energy for thermal assistance corresponding to a deep electron trap was estimated as 0.667 ± 0.006 eV whereas the activation energy for thermal quenching was calculated as 0.90 ± 0.04 eV. The intensity of the TA-OSL was also found to increase with irradiation dose. The dose response is sublinear from 25 to 150 Gy but saturates with further increase of dose. The TA-OSL dose response has been discussed by considering the competition for charges at the deep traps. This study incidentally shows that TA-OSL can be effectively used in dosimetry involving large doses.

Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dagnelund, D.; Huang, Y. Q.; Buyanova, I. A.

2015-01-07

By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate thatmore » the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.« less

Electrical and Optical Studies of Deep Levels in Nominally Undoped Thallium Bromide

NASA Astrophysics Data System (ADS)

Smith, Holland M.; Haegel, Nancy M.; Phillips, David J.; Cirignano, Leonard; Ciampi, Guido; Kim, Hadong; Chrzan, Daryl C.; Haller, Eugene E.

2014-02-01

Photo-induced conductivity transient spectroscopy (PICTS) and cathodoluminescence (CL) measurements were performed on nominally undoped detector grade samples of TlBr. In PICTS measurements, nine traps were detected in the temperature range 80-250 K using four-gate analysis. Five of the traps are tentatively identified as electron traps, and four as hole traps. CL measurements yielded two broad peaks common to all samples and most likely associated with defects. Correlations between the optically and electrically detected deep levels are considered. Above 250 K, the photoconductivity transients measured in the PICTS experiments exhibited anomalous transient behavior, indicated by non-monotonic slope variations as a function of time. The origin of the transients is under further investigation, but their presence precludes the accurate determination of trap parameters in TlBr above 250 K with traditional PICTS analysis. Their discovery was made possible by the use of a PICTS system that records whole photoconductivity transients, as opposed to reduced and processed signals.

Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1-x)4 Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caruso, A. E.; Lund, E. A.; Kosyak, V.

2016-11-21

Cu2ZnSn(S, Se)4 (CZTSe) is an earth-abundant semiconductor with potential for economical thin-film photovoltaic devices. Short minority carrier lifetimes contribute to low open circuit voltage and efficiency. Deep level defects that may contribute to lower minority carrier lifetimes in kesterites have been theoretically predicted, however very little experimental characterization of these deep defects exists. In this work we use admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) to characterize devices built using CZTSSe absorber layers deposited via both coevaporation and solution processing. AS reveals a band of widely-distributed activation energies for traps or energy barriers for transport, especially in themore » solution deposited case. DLTS reveals signatures of deep majority and minority traps within both types of samples.« less

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duc, Tran Thien; School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi; Pozina, Galia

2016-03-07

Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of twomore » electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.« less

Defect levels of semi-insulating CdMnTe:In crystals

NASA Astrophysics Data System (ADS)

Kim, K. H.; Bolotinikov, A. E.; Camarda, G. S.; Hossain, A.; Gul, R.; Yang, G.; Cui, Y.; Prochazka, J.; Franc, J.; Hong, J.; James, R. B.

2011-06-01

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

Deep-level stereoscopic multiple traps of acoustic vortices

NASA Astrophysics Data System (ADS)

Li, Yuzhi; Guo, Gepu; Ma, Qingyu; Tu, Juan; Zhang, Dong

2017-04-01

Based on the radiation pattern of a planar piston transducer, the mechanisms underlying the generation of axially controllable deep-level stereoscopic multiple traps of acoustic vortices (AV) using sparse directional sources were proposed with explicit formulae. Numerical simulations for the axial and cross-sectional distributions of acoustic pressure and phase were conducted for various ka (product of the wave number and the radius of transducer) values at the frequency of 1 MHz. It was demonstrated that, for bigger ka, besides the main-AV (M-AV) generated by the main lobes of the sources, cone-shaped side-AV (S-AV) produced by the side lobes were closer to the source plane at a relatively lower pressure. Corresponding to the radiation angles of pressure nulls between the main lobe and the side lobes of the sources, vortex valleys with nearly pressure zero could be generated on the central axis to form multiple traps, based on Gor'kov potential theory. The number and locations of vortex valleys could be controlled accurately by the adjustment of ka. With the established eight-source AV generation system, the existence of the axially controllable multiple traps was verified by the measured M-AV and S-AVs as well as the corresponding vortex valleys. The favorable results provided the feasibility of deep-level stereoscopic control of AV and suggested potential application of multiple traps for particle manipulation in the area of biomedical engineering.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marrakchi, G.; Barbier, D.; Guillot, G.

Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high valuesmore » of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.« less

Modifications of traps to reduce bycatch of freshwater turtles

USGS Publications Warehouse

Bury, R. Bruce

2011-01-01

Mortality of freshwater turtles varies among types and deployments of traps. There are few or no losses in hoop or fyke traps set where turtles may reach air, including placement in shallows, addition of floats on traps, and tying traps securely to a stake or to shore. Turtle mortality occurs when traps are set deep, traps are checked at intervals >1 day, and when turtles are captured as bycatch. Devices are available that exclude turtles from traps set for crab or game fish harvest. Slotted gates in front of the trap mouth reduce turtle entry, but small individuals still may be trapped. Incidental take of turtles is preventable by integrating several designs into aquatic traps, such as adding floats to the top of traps so turtles may reach air or an extension tube (chimney, ramp) that creates an escape route.

Tracer constraints on organic particle transfer efficiency to the deep ocean

NASA Astrophysics Data System (ADS)

Weber, T. S.; Cram, J. A.; Deutsch, C. A.

2016-02-01

The "transfer efficiency" of sinking organic particles through the mesopelagic zone is a critical determinant of ocean carbon sequestration timescales, and the atmosphere-ocean partition of CO2. Our ability to detect large-scale variations in transfer efficiency is limited by the paucity of particle flux data from the deep ocean, and the potential biases of bottom-moored sediment traps used to collect it. Here we show that deep-ocean particle fluxes can be reconstructed by diagnosing the rate of phosphate accumulation and oxygen disappearance along deep circulation pathways in an observationally constrained Ocean General Circulation Model (OGCM). Combined with satellite and model estimates of carbon export from the surface ocean, these diagnosed fluxes reveal a global pattern of transfer efficiency to 1000m and 2000m that is high ( 20%) at high latitudes and negligible (<5%) throughout subtropical gyres, with intermediate values in the tropics. This pattern is at odds with previous estimates of deep transfer efficiency derived from bottom-moored sediment traps, but is consistent with upper-ocean flux profiles measured by neutrally buoyant sediment traps, which show strong attenuation of low latitude particle fluxes over the top 500m. Mechanistically, the pattern can be explained by spatial variations in particle size distributions, and the temperature-dependence of remineralization. We demonstrate the biogeochemical significance of our findings by comparing estimates of deep-ocean carbon sequestration in a scenario with spatially varying transfer efficiency to one with a globally uniform "Martin-curve" particle flux profile.

A combined methodology using electrical resistivity tomography, ordinary kriging and porosimetry for quantifying total C trapped in carbonate formations associated with natural analogues for CO2 leakage

NASA Astrophysics Data System (ADS)

Prado-Pérez, A. J.; Aracil, E.; Pérez del Villar, L.

2014-06-01

Currently, carbon deep geological storage is one of the most accepted methods for CO2 sequestration, being the long-term behaviour assessment of these artificial systems absolutely essential to guarantee the safety of the CO2 storage. In this sense, hydrogeochemical modelling is being used for evaluating any artificial CO2 deep geological storage as a potential CO2 sinkhole and to assess the leakage processes that are usually associated with these engineered systems. Carbonate precipitation, as travertines or speleothems, is a common feature in the CO2 leakage scenarios and, therefore, is of the utmost importance to quantify the total C content trapped as a stable mineral phase in these carbonate formations. A methodology combining three classical techniques such as: electrical resistivity tomography, geostatistical analysis and mercury porosimetry is described in this work, which was developed for calculating the total amount of C trapped as CaCO3 associated with the CO2 leakages in Alicún de las Torres natural analogue (Granada, Spain). The proposed methodology has allowed estimating the amount of C trapped as calcite, as more than 1.7 Mt. This last parameter, focussed on an artificial CO2 deep geological storage, is essential for hydrogeochemical modellers when evaluating whether CO2 storages constitute or not CO2 sinkholes. This finding is extremely important when assessing the long-term behaviour and safety of any artificial CO2 deep geological storage.

Origin of reduced efficiency in high Ga concentration Cu(In,Ga)Se2 solar cell

NASA Astrophysics Data System (ADS)

Wei, S.-H.; Huang, B.; Deng, H.; Contreras, M. A.; Noufi, R.; Chen, S.; Wang, L. W.

2014-03-01

CuInSe2 (CIS) is one of the most attractive thin-film materials for solar cells. It is well know that alloying Ga into CIS forming Cu(In,Ga)Se2 (CIGS) alloy is crucial to achieve the high efficiency, but adding too much Ga will lead to a decline of the solar cell efficiency. The exact origin of this puzzling phenomenon is currently still under debate. Using first-principles method, we have systemically studied the structural and electronic properties of CIGS alloys. Our phase diagram calculations suggest that increasing growth temperature may not be a critical factor in enhancing the cell performance of CIGS under equilibrium growth condition. On the other hand, our defect calculations identify that high concentration of antisite defects MCu(M =In, Ga) rather than anion defects are the key deep-trap centers in CIGS. The more the Ga concentration in CIGS, the more harmful the deep-trap is. Self-compensation in CIGS, which forms 2VCu + MCudefect complexes, is found to be beneficial to quench the deep-trap levels induced by MCu in CIGS, especially at low Ga concentration. Unfortunately, the density of isolated MCu is quite high and cannot be largely converted into 2VCu + MCu complexes under thermal equilibrium condition. Thus, nonequilibrium growth conditions or low growth temperature that can suppress the formation of the deep-trap centers MCu may be necessary for improving the efficiency of CIGS solar cells with high Ga concentrations.

Time resolved photoluminescence on Cu(In, Ga)Se2 absorbers: Distinguishing degradation and trap states

NASA Astrophysics Data System (ADS)

Redinger, Alex; Levcenko, Sergiu; Hages, Charles J.; Greiner, Dieter; Kaufmann, Christian A.; Unold, Thomas

2017-03-01

Recent reports have suggested that the long decay times in time resolved photoluminescence (TRPL), often measured in Cu(In, Ga)Se2 absorbers, may be a result of detrapping from sub-bandgap defects. In this work, we show via temperature dependent measurements, that long lifetimes >50 ns can be observed that reflect the true minority carrier lifetime not related to deep trapping. Temperature dependent time resolved photoluminescence and steady state photoluminescence imaging measurements are used to analyze the effect of annealing in air and in a nitrogen atmosphere between 300 K and 350 K. We show that heating the Cu(In, Ga)Se2 absorber in air can irreversibly decrease the TRPL decay time, likely due to a deterioration of the absorber surface. Annealing in an oxygen-free environment yields a temperature dependence of the TRPL decay times in accordance with Schockley Read Hall recombination kinetics and weakly varying capture cross sections according to T0.6.

Ultrafast exciton dynamics in cadmium selenide nanocrystals determined by femtosecond fluorescence upconversion spectroscopy

NASA Astrophysics Data System (ADS)

Underwood, David Frederick

Femtosecond fluorescence upconversion spectroscopy is a technique that allows the unambiguous determination of the excited state dynamics of an analyte. Combining this method with the use of tunable laser excitation, the exciton dynamics in semiconducting nanocrystals (NC's) of cadmium selenide (CdSe) have been determined, devoid of the complications arising from more common spectroscopic methods such as pump-probe. The results of this investigation were used to construct a model to fully describe the three-level system comprising of the valence and conduction bands and surface states, which have been calculated by others to lie mid-gap in energy. Smaller NC's showed faster decay components due to increased interaction between the exciton and surface states. The deep trap emission, which has never before been measured by ultrafast fluorescence techniques, shows a rapid rise time (˜2 ps), which is attributed to surface selenium dangling bonds relaxing to the valence band and radiatively combining with the photo-generated hole. The band edge fluorescence decays as the deep trap emission grows in, inherently coupling the two processes. An experiment which measured the dependence of the excitation energy showed that increased energy imparted to the NC's resulted in increased rise times, yielding the timescales for exciton relaxation through the valence and conduction band states to the lowest emitting state. Surface-oxidized and normally-passivated NC's display the same decay dynamics in time but differ in relative amplitude; the latter point agrees with steady-state measurements. The rotational anisotrophy of the NC's was measured and agrees with previous pump-probe data. Upconversion on the red and blue sides of the static fluorescence spectrum showed no discernable differences, which is either and inherent limitation of the experimental apparatus, or the possibility that lower-lying triplet states are populated on a timescale below the instrument resolution.

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musolino, M.; Treeck, D. van, E-mail: treeck@pdi-berlin.de; Tahraoui, A.

2016-01-28

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of 570 ± 20 and 840 ± 30 meV below the conduction band minimum. The physical origin of these deep level states is discussed. Themore » temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.« less

Enabling Exploration of Deep Space: High Density Storage of Antimatter

NASA Technical Reports Server (NTRS)

Smith, Gerald A.; Kramer, Kevin J.

1999-01-01

Portable electromagnetic antiproton traps are now in a state of realization. This allows facilities like NASA Marshall Space Flight Center to conduct antimatter research remote to production sites. MSFC is currently developing a trap to store 10(exp 12) antiprotons for a twenty-day half-life period to be used in future experiments including antimatter plasma guns, antimatter-initiated microfusion, and the synthesis of antihydrogen for space propulsion applications. In 1998, issues including design, safety and transportation were considered for the MSFC High Performance Antimatter Trap (HiPAT). Radial diffusion and annihilation losses of antiprotons prompted the use of a 4 Tesla superconducting magnet and a 20 KV electrostatic potential at 10(exp -12) Torr pressure. Cryogenic fluids used to maintain a trap temperature of 4K were sized accordingly to provide twenty days of stand-alone storage time (half-life). Procurement of the superconducting magnet with associated cryostat has been completed. The inner, ultra-high vacuum system with electrode structures has been fabricated, tested and delivered to MSFC along with the magnet and cryostat. Assembly of these systems is currently in progress. Testing under high vacuum conditions, using electrons and hydrogen ions will follow in the months ahead.

Small polarons and point defects in LaFeO3

NASA Astrophysics Data System (ADS)

Zhu, Zhen; Peelaers, Hartwin; van de Walle, Chris G.

The proton-conductive perovskite-type LaFeO3 is a promising negative-electrode material for Ni/metal-hydride (Ni-MH) batteries. It has a discharge capacity up to 530 mAhg-1 at 333 K, which is significantly higher than commercialized AB5-type alloys. To elucidate the underlying mechanism of this performance, we have investigated the structural and electronic properties of bulk LaFeO3, as well as the effect of point defects, using hybrid density functional methods. LaFeO3 is antiferromagnetic in the ground state with a band gap of 3.54 eV. Small hole and electron polarons can form through self- or point-defect-assisted trapping. We find that La vacancies and Sr substitutional on La sites are shallow acceptors with the induced holes trapped as small polarons, while O and Fe vacancies are deep defect centers. Hydrogen interstitials behave like shallow donors, with the donor electrons localized on nearby iron sites as electron polarons. With a large trapping energy, these polarons can act as electron or hole traps and affect the electrical performance of LaFeO3 as the negative electrode for Ni-MH batteries. We acknowledge DOE for financial support.

The JPL trapped mercury ion frequency standard

NASA Technical Reports Server (NTRS)

Prestage, J. D.; Dick, G. J.; Maleki, L.

1988-01-01

In order to provide frequency standards for the Deep Space Network (DSN) which are more stable than present-day hydrogen masers, a research task was established under the Advanced Systems Program of the TDA to develop a Hg-199(+) trapped ion frequency standard. The first closed-loop operation of this kind is described. Mercury-199 ions are confined in an RF trap and are state-selected through the use of optical pumping with 194 nm UV light from a Hg-202 discharge lamp. Absorption of microwave radiation at the hyperfine frequency (40.5 GHz) is signaled by atomic fluorescence of the UV light. The frequency of a 40.5 GHz oscillator is locked to a 1.6 Hz wide atomic absorption line of the trapped ions. The measured Allan variance of this locked oscillator is currently gamma sub y (pi) = 4.4 x 10 to the minus 12th/square root of pi for 20 is less than pi is less than 320 seconds, which is better stability than the best commercial cesium standards by almost a factor of 2. This initial result was achieved without magnetic shielding and without regulation of ion number.

A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies

NASA Astrophysics Data System (ADS)

Matsubara, Masahiko; Bellotti, Enrico

2017-05-01

Various forms of carbon based complexes in GaN are studied with first-principles calculations employing Heyd-Scuseria-Ernzerhof hybrid functionals within the framework of the density functional theory. We consider carbon complexes made of the combinations of single impurities, i.e., CN-CGa, CI-CN , and CI-CGa , where CN, CGa , and CI denote C substituting nitrogen, C substituting gallium, and interstitial C, respectively, and of neighboring gallium/nitrogen vacancies ( VGa / VN ), i.e., CN-VGa and CGa-VN . Formation energies are computed for all these configurations with different charge states after full geometry optimizations. From our calculated formation energies, thermodynamic transition levels are evaluated, which are related to the thermal activation energies observed in experimental techniques such as deep level transient spectroscopy. Furthermore, the lattice relaxation energies (Franck-Condon shift) are computed to obtain optical activation energies, which are observed in experimental techniques such as deep level optical spectroscopy. We compare our calculated values of activation energies with the energies of experimentally observed C-related trap levels and identify the physical origins of these traps, which were unknown before.

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Polymeric and Molecular Materials for Advanced Organic Electronics

DTIC Science & Technology

2011-07-25

printable variants. All have excellent dielectric and insulating properties, a remarkable ability to minimize trapped charge between thin film transistor... trapped charge density, and hence the corresponding OTFT device performance. Under this program we first discovered that OTFT performance is...deep, high- density charge traps must be overcome for efficient FET operation, it has been postulated that in most OFETs, shallow lower-density (~10

CO2 Capillary-Trapping Processes in Deep Saline Aquifers

NASA Astrophysics Data System (ADS)

Gershenzon, Naum I.; Soltanian, Mohamadreza; Ritzi, Robert W., Jr.; Dominic, David F.

2014-05-01

The idea of reducing the Earth's greenhouse effect by sequestration of CO2 into the Earth's crust has been discussed and evaluated for more than two decades. Deep saline aquifers are the primary candidate formations for realization of this idea. Evaluation of reservoir capacity and the risk of CO2 leakage require a detailed modeling of the migration and distribution of CO2 in the subsurface structure. There is a finite risk that structural (or hydrodynamic) trapping by caprock may be compromised (e.g. by improperly abandoned wells, stratigraphic discontinuities, faults, etc.). Therefore, other trapping mechanisms (capillary trapping, dissolution, and mineralization) must be considered. Capillary trapping may be very important in providing a "secondary-seal", and is the focus of our investigation. The physical mechanism of CO2 trapping in porous media by capillary trapping incorporates three related processes, i.e. residual trapping, trapping due to hysteresis of the relative permeability, and trapping due to hysteresis of the capillary pressure. Additionally CO2 may be trapped in heterogeneous media due to difference in capillary pressure entry points for different materials. The amount of CO2 trapped by these processes is a complicated nonlinear function of the spatial distribution of permeability, permeability anisotropy, capillary pressure, relative permeability of brine and CO2, permeability hysteresis and residual gas saturation (as well as the rate, total amount and placement of injected CO2). Geological heterogeneities essentially affect the dynamics of a CO2 plume in subsurface environments. Recent studies have led to new conceptual and quantitative models for sedimentary architecture in fluvial deposits over a range of scales that are relevant to the performance of some deep saline reservoirs [1, 2]. We investigated how the dynamics of a CO2 plume, during and after injection, is influenced by the hierarchical and multi-scale stratal architecture in such reservoirs. The results strongly suggest that representing these small scales features, and representing how they are organized within a hierarchy of larger-scale features, is critical to understanding capillary trapping processes. References [1] Bridge, J.S. (2006), Fluvial facies models: Recent developments, in Facies Models Revisited, SEPM Spec. Publ., 84, edited by H. W. Posamentier and R. G. Walker, pp. 85-170, Soc. for Sediment. Geol. (SEPM), Tulsa, Okla [2] Ramanathan, R., A. Guin, R.W. Ritzi, D.F. Dominic, V.L. Freedman, T.D. Scheibe, and I.A. Lunt (2010), Simulating the heterogeneity in channel belt deposits: Part 1. A geometric-based methodology and code, Water Resources Research, v. 46, W04515.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua

2015-01-28

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measuredmore » carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.« less

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

NASA Astrophysics Data System (ADS)

Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

2018-05-01

High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

Raman gas self-organizing into deep nano-trap lattice

PubMed Central

Alharbi, M.; Husakou, A.; Chafer, M.; Debord, B.; Gérôme, F.; Benabid, F.

2016-01-01

Trapping or cooling molecules has rallied a long-standing effort for its impact in exploring new frontiers in physics and in finding new phase of matter for quantum technologies. Here we demonstrate a system for light-trapping molecules and stimulated Raman scattering based on optically self-nanostructured molecular hydrogen in hollow-core photonic crystal fibre. A lattice is formed by a periodic and ultra-deep potential caused by a spatially modulated Raman saturation, where Raman-active molecules are strongly localized in a one-dimensional array of nanometre-wide sections. Only these trapped molecules participate in stimulated Raman scattering, generating high-power forward and backward Stokes continuous-wave laser radiation in the Lamb–Dicke regime with sub-Doppler emission spectrum. The spectrum exhibits a central line with a sub-recoil linewidth as low as ∼14 kHz, more than five orders of magnitude narrower than conventional-Raman pressure-broadened linewidth, and sidebands comprising Mollow triplet, motional sidebands and four-wave mixing. PMID:27677451

Positioning of the sensor cell on the sensing area using cell trapping pattern in incubation type planar patch clamp biosensor.

PubMed

Wang, Zhi-Hong; Takada, Noriko; Uno, Hidetaka; Ishizuka, Toru; Yawo, Hiromu; Urisu, Tsuneo

2012-08-01

Positioning the sensor cell on the micropore of the sensor chip and keeping it there during incubation are problematic tasks for incubation type planar patch clamp biosensors. To solve these problems, we formed on the Si sensor chip's surface a cell trapping pattern consisting of a lattice pattern with a round area 5 μm deep and with the micropore at the center of the round area. The surface of the sensor chip was coated with extra cellular matrix collagen IV, and HEK293 cells on which a chimera molecule of channel-rhodopsin-wide-receiver (ChR-WR) was expressed, were then seeded. We examined the effects of this cell trapping pattern on the biosensor's operation. In the case of a flat sensor chip without a cell trapping pattern, it took several days before the sensor cell covered the micropore and formed an almost confluent state. As a result, multi-cell layers easily formed and made channel current measurements impossible. On the other hand, the sensor chip with cell trapping pattern easily trapped cells in the round area, and formed the colony consisted of the cell monolayer covering the micropore. A laser (473 nm wavelength) induced channel current was observed from the whole cell arrangement formed using the nystatin perforation technique. The observed channel current characteristics matched measurements made by using a pipette patch clamp. Copyright © 2012 Elsevier B.V. All rights reserved.

Photo annealing effect on p-doped inverted organic solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lafalce, Evan; Toglia, Patrick; Lewis, Jason E.

2014-06-28

We report the transient positive photo annealing effect in which over 600% boost of power conversion efficiency was observed in inverted organic photovoltaic devices (OPV) made from P3HT/PCBM by spray method, after 2 hrs of constant solar AM 1.5 irradiation at low temperature. This is opposite to usual photodegradation of OPV, and cannot be explained by thermal activation alone since the mere temperature effect could only account for 30% of the enhancement. We have investigated the temperature dependence, cell geometry, oxygen influence, and conclude that, for p-doped active layer at room temperature, the predominant mechanism is photo-desorption of O{sub 2}, whichmore » eliminates electron traps and reduces space charge screening. As temperature decreases, thermal activation and deep trap-state filling start to show noticeable effect on the enhancement of photocurrent at intermediate low temperature (T = 125 K). At very low temperature, the dominant mechanism for photo annealing is trap-filling, which significantly reduces recombination between free and trapped carriers. At all temperature, photo annealing effect depends on illumination direction from cathode or anode. We also explained the large fluctuation of photocurrent by the capture/reemit of trapped electrons from shallow electron traps of O{sub 2}{sup -} generated by photo-doping. Our study has demonstrated the dynamic process of photo-doping and photo-desorption, and shown that photo annealing in vacuum can be an efficient method to improve OPV device efficiency.« less

An electron trap related to phosphorus deficiency in high-purity InP grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yamamoto, Norio; Uwai, Kunihiko; Takahei, Kenichiro

1989-04-01

Deep levels in high-purity InP crystal grown by metalorganic chemical vapor deposition (MOCVD) have been measured by deep level transient spectroscopy. While no electron traps are observed in the samples grown at 600 °C with a [PH3]/[In(C2H5)3] of 170, three electron traps with activation energies of 0.80, 0.44, and 0.24 eV were observed in the samples grown at 500 °C with the same [PH3]/[In(C2H5)3]. The 0.44-eV trap, whose capture cross section is 1.5×10-18 cm2, observed at a low [PH3]/[In(C2H5)3] shows a decrease in concentration as [PH3]/[In(C2H5)3] is increased, and becomes less than 5×1012 cm-3 at a [PH3]/[In(C2H5)3] of more than 170. The comparison of annealing behavior of this trap in MOCVD InP and that in liquid-encapsulated Czochralski InP suggests that the 0.44-eV trap is related to a complex formed from residual impurities and native defects related to a phosphorus deficiency such as phosphorus vacancies or indium interstitials. This trap is found to show configurational bistability similar to that observed for the trap in an Fe-doped InP, MFe center.

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates

NASA Astrophysics Data System (ADS)

Yamada, H.; Chonan, H.; Takahashi, T.; Yamada, T.; Shimizu, M.

2018-04-01

In this study, we investigated the deep-level traps in Si-doped GaN epitaxial layers by metal-organic chemical vapor deposition on c-oriented and m-oriented free-standing GaN substrates. The c-oriented and m-oriented epitaxial layers, grown at a temperature of 1000 °C and V/III ratio of 1000, contained carbon atomic concentrations of 1.7×1016 and 4.0×1015 cm-3, respectively. A hole trap was observed at about 0.89 eV above the valence band maximum by minority carrier transient spectroscopy. The trap concentrations in the c-oriented and m-oriented GaN epitaxial layers were consistent with the carbon atomic concentrations from secondary ion mass spectroscopy and the yellow luminescence intensity at 2.21 eV from photoluminescence. The trap concentrations in the m-oriented GaN epitaxial layers were lower than those in the c-oriented GaN. Two electron traps, 0.24 and 0.61 eV below the conduction band (EC) minimum, were observed in the c-oriented GaN epitaxial layer. In contrast, the m-oriented GaN epitaxial layer was free from the electron trap at EC - 0.24 eV, and the trap concentration at EC - 0.61 eV in the m-oriented GaN epitaxial layer was lower than that in the c-oriented GaN epitaxial layer. The m-oriented GaN epitaxial layer exhibited fewer hole and electron traps compared to the c-oriented GaN epitaxial layers.

Trap Modulated Charge Carrier Transport in Polyethylene/Graphene Nanocomposites.

PubMed

Li, Zhonglei; Du, Boxue; Han, Chenlei; Xu, Hang

2017-06-21

The role of trap characteristics in modulating charge transport properties is attracting much attentions in electrical and electronic engineering, which has an important effect on the electrical properties of dielectrics. This paper focuses on the electrical properties of Low-density Polyethylene (LDPE)/graphene nanocomposites (NCs), as well as the corresponding trap level characteristics. The dc conductivity, breakdown strength and space charge behaviors of NCs with the filler content of 0 wt%, 0.005 wt%, 0.01 wt%, 0.1 wt% and 0.5 wt% are studied, and their trap level distributions are characterized by isothermal discharge current (IDC) tests. The experimental results show that the 0.005 wt% LDPE/graphene NCs have a lower dc conductivity, a higher breakdown strength and a much smaller amount of space charge accumulation than the neat LDPE. It is indicated that the graphene addition with a filler content of 0.005 wt% introduces large quantities of deep carrier traps that reduce charge carrier mobility and result in the homocharge accumulation near the electrodes. The deep trap modulated charge carrier transport attributes to reduce the dc conductivity, suppress the injection of space charges into polymer bulks and enhance the breakdown strength, which is of great significance in improving electrical properties of polymer dielectrics.

Optimization of chemical compositions in low-carbon Al-killed enamel steel produced by ultra-fast continuous annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Futao, E-mail: dongft@sina.com; Du, Linxiu; Liu, Xianghua

2013-10-15

The influence of Mn,S and B contents on microstructural characteristics, mechanical properties and hydrogen trapping ability of low-carbon Al-killed enamel steel was investigated. The materials were produced and processed in a laboratory and the ultra-fast continuous annealing processing was performed using a continuous annealing simulator. It was found that increasing Mn,S contents in steel can improve its hydrogen trapping ability which is attributed by refined ferrite grains, more dispersed cementite and added MnS inclusions. Nevertheless, it deteriorates mechanical properties of steel sheet. Addition of trace boron results in both good mechanical properties and significantly improved hydrogen trapping ability. The boronmore » combined with nitrogen segregating at grain boundaries, cementite and MnS inclusions, provides higher amount of attractive hydrogen trapping sites and raises the activation energy for hydrogen desorption from them. - Highlights: • We study microstructures and properties in low-carbon Al-killed enamel steel. • Hydrogen diffusion coefficients are measured to reflect fish-scale resistance. • Manganese improves hydrogen trapping ability but decrease deep-drawing ability. • Boron improves both hydrogen trapping ability and deep-drawing ability. • Both excellent mechanical properties and fish-scale resistance can be matched.« less

Antimatter Transport Processes

NASA Astrophysics Data System (ADS)

van der Werf, D. P.; Andresen G. B.; Ashkezari, M. D.; Baquero-Ruiz, M.; Bertsche W.; Bowe, P. D.; Bray, C. C.; Butler, E.; Cesar, C. L.; Chapman, S.; Charlton, M.; Fajans, J.; Friesen, T.; Fujiwara, M. C.; Gill, D. R.; Hangst, J. S.; Hardy, W. N.; Hayano, R. S.; Hayden, M. E.; Humphries, A. J.; Hydomako, R.; Jonsell, S.; Kurchaninov, L.; Lambo, R.; Madsen, N.; Menary, S.; Nolan, P.; Olchanski, K.; Olin, A.; Povilus, A.; Pusa, P.; Robicheaux, F.; Sarid, E.; Silveira, D. M.; So, C.; Storey, J. W.; Thompson, R. I.; Wilding, D.; Wurtele, J. S.; Yamazaki, Y.; Alpha Collaboration

2010-07-01

The comparison of the 1S-2S energy levels of hydrogen and antihydrogen will yield a stringent test of CPT conservation. Necessarily, the antihydrogen atoms need to be trapped to perform high precision spectroscopy measurements. Therefore, an approximately 1 T deep neutral trap, about 0.7 K for ground state (anti)hydrogen atoms, has been superimposed on a Penning-Malmberg trap in which the antiatoms are formed. The antihydrogen atoms, which are required to have a low enough kinetic energy to be trapped, are produced following a number of steps. A bunch of antiprotons from the CERN Antiproton Decelerator are caught in a Penning-Malmberg trap and subsequently sympathetically cooled down and then compressed using rotating wall electric fields. A positron plasma, formed in a separate accumulator, is transported to the main system and also compressed. Antihydrogen atoms are then formed by mixing the antiprotons and positrons. The velocity of the antiatoms, and their binding energies, will strongly depend on the initial conditions of the constituent particles, for example their temperatures and densities, and on the details of the mixing process. In this talk the complete lifecycle of antihydrogen atoms will be presented, starting with the production of the constituent particles and the description of the manipulations necessary to prepare positrons and antiprotons appropriately for antihydrogen formation. The latter will also be described, as will the possible fates of the antiatoms.

On the deep-mantle origin of the Deccan Traps

NASA Astrophysics Data System (ADS)

Glišović, Petar; Forte, Alessandro M.

2017-02-01

The Deccan Traps in west-central India constitute one of Earth’s largest continental flood basalt provinces, whose eruption played a role in the Cretaceous-Paleogene extinction event. The unknown mantle structure under the Indian Ocean at the start of the Cenozoic presents a challenge for connecting the event to a deep mantle origin. We used a back-and-forth iterative method for time-reversed convection modeling, which incorporates tomography-based, present-day mantle heterogeneity to reconstruct mantle structure at the start of the Cenozoic. We show a very low-density, deep-seated upwelling that ascends beneath the Réunion hot spot at the time of the Deccan eruptions. We found a second active upwelling below the Comores hot spot that likely contributed to the region of partial melt feeding the massive eruption.

Metastable defect response in CZTSSe from admittance spectroscopy

DOE PAGES

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; ...

2017-10-02

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se) 4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the devicemore » measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.« less

Deep-water zooplankton in the Mediterranean Sea: Results from a continuous, synchronous sampling over different regions using sediment traps

NASA Astrophysics Data System (ADS)

Danovaro, R.; Carugati, L.; Boldrin, A.; Calafat, A.; Canals, M.; Fabres, J.; Finlay, K.; Heussner, S.; Miserocchi, S.; Sanchez-Vidal, A.

2017-08-01

Information on the dynamics of deep-sea biota is extremely scant particularly for long-term time series on deep-sea zooplankton. Here, we present the results of a deep-sea zooplankton investigation over one annual cycle based on samples from sediment trap moorings in three sub-basins along the Mediterranean Sea. Deep-sea zooplankton assemblages were dominated by copepods, as in shallow waters, only in the Adriatic Sea (>60% of total abundance), but not in the deep Ionian Sea, where ostracods represented >80%, neither in the deep Alboran Sea, where polychaetes were >70%. We found that deep-sea zooplankton assemblages: i) are subjected to changes in their abundance and structure over time, ii) are characterized by different dominant taxa in different basins, and iii) display clear taxonomic segregation between shallow and near-bottom waters. Zooplankton biodiversity decreases with increasing water depth, but the equitability increases. We suggest here that variations of zooplankton abundance and assemblage structure are likely influenced by the trophic condition characterizing the basins. Our findings provide new insights on this largely unknown component of the deep ocean, and suggest that changes in the export of organic matter from the photic zone, such as those expected as a consequence of global change, can significantly influence zooplankton assemblages in the largest biome on Earth.

Picosecond Electronic Relaxations In Amorphous Semiconductors

NASA Astrophysics Data System (ADS)

Tauc, Jan

1983-11-01

Using the pump and probe technique the relaxation processes of photogenerated carriers in amorphous tetrahedral semiconductors and chalcogenide glasses in the time domain from 0.5 Ps to 1.4 ns have been studied. The results obtained on the following phenomena are reviewed: hot carrier thermalization in amorphous silicon; trapping of carriers in undoped a-Si:H; trapping of carriers in deep traps produced by doping; geminate recombination in As2S3-xSex glasses.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

Polyacetylene, (CH){sub x}, as an Emerging Material for Solar Cell Applications. Final Technical Report, March 19, 1979 - March 18, 1980

DOE R&D Accomplishments Database

Heeger, A. J.; MacDiarmid, A. G.

1980-06-05

Despite great theoretical and technological interest in polyacetylene, (CH){sub x}, the basic features of its band structure have not been unambiguously resolved. Since photoconductivity and optical absorption data have frequently been used to infer information on the band structure of semiconductors, such measurements were carried out on (CH){sub x}. The main results of an extensive study of the photoconductivity (..delta.. sigma{sub ph}) and absorption coefficient (..cap alpha..) in (CH){sub x} are presented. The absence of photoconductivity in cis-(CH){sub x}, despite the similarity in optical properties indicates that ..delta.. sigma/sub ph/ in trans-(CH){sub x} is induced by isomerization. It is found that isomerization generates states deep inside the gap that act as safe traps for minority carriers and thereby enhance the photoconductivity. Compensation of trans-(CH){sub x} with ammonia appears to decrease the number of safe traps, whereas acceptor doping increases their number. Thus, chemical doping can be used to control the photoconductive response. The energy of safe traps inside the gap is independent of the process used to generate them; indicative of an intrinsic localized defect level in trans-(CH){sub x}. A coherent picture based on the soliton model can explain these results, including the safe trapping.

Automatically identifying, counting, and describing wild animals in camera-trap images with deep learning.

PubMed

Norouzzadeh, Mohammad Sadegh; Nguyen, Anh; Kosmala, Margaret; Swanson, Alexandra; Palmer, Meredith S; Packer, Craig; Clune, Jeff

2018-06-19

Having accurate, detailed, and up-to-date information about the location and behavior of animals in the wild would improve our ability to study and conserve ecosystems. We investigate the ability to automatically, accurately, and inexpensively collect such data, which could help catalyze the transformation of many fields of ecology, wildlife biology, zoology, conservation biology, and animal behavior into "big data" sciences. Motion-sensor "camera traps" enable collecting wildlife pictures inexpensively, unobtrusively, and frequently. However, extracting information from these pictures remains an expensive, time-consuming, manual task. We demonstrate that such information can be automatically extracted by deep learning, a cutting-edge type of artificial intelligence. We train deep convolutional neural networks to identify, count, and describe the behaviors of 48 species in the 3.2 million-image Snapshot Serengeti dataset. Our deep neural networks automatically identify animals with >93.8% accuracy, and we expect that number to improve rapidly in years to come. More importantly, if our system classifies only images it is confident about, our system can automate animal identification for 99.3% of the data while still performing at the same 96.6% accuracy as that of crowdsourced teams of human volunteers, saving >8.4 y (i.e., >17,000 h at 40 h/wk) of human labeling effort on this 3.2 million-image dataset. Those efficiency gains highlight the importance of using deep neural networks to automate data extraction from camera-trap images, reducing a roadblock for this widely used technology. Our results suggest that deep learning could enable the inexpensive, unobtrusive, high-volume, and even real-time collection of a wealth of information about vast numbers of animals in the wild. Copyright © 2018 the Author(s). Published by PNAS.

Charge trapping in detector grade thallium bromide and cadmium zinc telluride: Measurement and theory

NASA Astrophysics Data System (ADS)

Elshazly, Ezzat S.; Tepper, Gary; Burger, Arnold

2010-08-01

Carrier trapping times were measured in detector grade thallium bromide (TlBr) and cadmium zinc telluride (CZT) from 300 to 110 K and the experimental data were analyzed using a trapping model. In CZT, because the majority carrier concentration is close to the intrinsic carrier concentration, the trapping time increases exponentially as the temperature decreases below about 160 K. In TlBr, the majority carrier concentration is many orders of magnitude greater than the intrinsic carrier concentration and the trapping time followed a (1/ T) 1/2 temperature dependence over the range of temperatures studied. The results of the model suggest that a moderately deep compensation center could be used to significantly increase the room temperature trapping time in TlBr.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozlovski, V. V.; Lebedev, A. A.; Bogdanova, E. V.

The model of conductivity compensation in SiC under irradiation with high-energy electrons is presented. The following processes are considered to cause a decrease in the free carrier concentration: (i) formation of deep traps by intrinsic point defects, Frenkel pairs produced by irradiation; (ii) 'deactivation' of the dopant via formation of neutral complexes including a dopant atom and a radiation-induced point defect; and (iii) formation of deep compensating traps via generation of charged complexes constituted by a dopant atom and a radiation-induced point defect. To determine the compensation mechanism, dose dependences of the deep compensation of moderately doped SiC (CVD) undermore » electron irradiation have been experimentally studied. It is demonstrated that, in contrast to n-FZ-Si, moderately doped SiC (CVD) exhibits linear dependences (with a strongly nonlinear dependence observed for Si). Therefore, the conductivity compensation in silicon carbide under electron irradiation occurs due to deep traps formed by primary radiation defects (vacancies and interstitial atoms) in the silicon and carbon sublattices. It is known that the compensation in silicon is due to the formation of secondary radiation defects that include a dopant atom. It is shown that, in contrast to n-SiC (CVD), primary defects in only the carbon sublattice of moderately doped p-SiC (CVD) cannot account for the compensation process. In p-SiC, either primary defects in the silicon sublattice or defects in both sublattices are responsible for the conductivity compensation.« less

Investigation of hydrogen interaction with defects in zirconia

NASA Astrophysics Data System (ADS)

Melikhova, O.; Kuriplach, J.; Čížek, J.; Procházka, I.; Brauer, G.; Anwand, W.

2010-04-01

Defect studies of a ZrO2 + 9 mol. % Y2O3 single crystal were performed in this work using a high resolution positron lifetime spectroscopy combined with slow positron implantation spectroscopy. In order to elucidate the nature of positron trapping sites observed experimentally, the structural relaxations of several types of vacancy-like defects in zirconia were performed and positron characteristics for them were calculated. Relaxed atomic configurations of studied defects were obtained by means of ab initio pseudopotential method within the supercell approach. Theoretical calculations indicated that neither oxygen vacancies nor their neutral complexes with substitute yttrium atoms are capable of positron trapping. On the other hand, zirconium vacancies are deep positron traps and are most probably responsible for the saturated positron trapping observed in yttria stabilized zirconia single crystals. However, the calculated positron lifetime for zirconium vacancy is apparently longer than the experimental value corresponding to a single-component spectrum measured for the cubic ZrO2 + 9 mol. % Y2O3 single crystal. It was demonstrated that this effect can be explained by hydrogen trapped in zirconium vacancies. On the basis of structure relaxations, we found that zirconium vacancy - hydrogen complexes represent deep positron traps with the calculated lifetime close to the experimental one. In zirconium vacancy - hydrogen complexes the hydrogen atom forms an O-H bond with one of the nearest neighbour oxygen atoms. The calculated bond length is close to 1 Å.

Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Vigneshwara Raja, P.; Narasimha Murty, N. V. L.

2018-04-01

Deep level defects in 4H-SiC Schottky barrier diodes (SBDs) fabricated on n-type epitaxial 4H-SiC have been identified by thermally stimulated capacitance (TSCAP) spectroscopy prior to and after 60Co-gamma irradiation. The TSCAP measurements on the non-irradiated SBDs reveal two electron traps at Ec-0.63 eV (˜250 K) and Ec-1.13 eV (˜525 K), whereas only one trap at Ec-0.63 eV is identified by conventional thermally stimulated current (TSC) measurements. Hence, TSCAP spectroscopy is more effective in identifying deep level defects in epitaxial 4 H-SiC SBDs as compared to the TSC spectroscopy. Upon exposure to 60Co-gamma rays up to a dose of 100 Mrad, significant changes in the concentration of the traps at Ec-0.63 eV, Ec-1.13 eV, and one new trap at Ec-0.89 eV (˜420 K) are observed. The electrical characteristics of the SBDs are considerably changed after gamma irradiation. The dominant mechanisms responsible for the irradiation induced changes in the SBD electrical characteristics are analyzed by incorporating the trap signatures in the commercial Silvaco® TCAD device simulator. The extracted trap parameters of the irradiated SBDs may be helpful in predicting the survival of 4H-SiC SBD detectors at higher irradiation levels.

On the deep-mantle origin of the Deccan Traps.

PubMed

Glišović, Petar; Forte, Alessandro M

2017-02-10

The Deccan Traps in west-central India constitute one of Earth's largest continental flood basalt provinces, whose eruption played a role in the Cretaceous-Paleogene extinction event. The unknown mantle structure under the Indian Ocean at the start of the Cenozoic presents a challenge for connecting the event to a deep mantle origin. We used a back-and-forth iterative method for time-reversed convection modeling, which incorporates tomography-based, present-day mantle heterogeneity to reconstruct mantle structure at the start of the Cenozoic. We show a very low-density, deep-seated upwelling that ascends beneath the Réunion hot spot at the time of the Deccan eruptions. We found a second active upwelling below the Comores hot spot that likely contributed to the region of partial melt feeding the massive eruption. Copyright © 2017, American Association for the Advancement of Science.

Deep level transient spectroscopy signatures of majority traps in GaN p-n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

NASA Astrophysics Data System (ADS)

PŁaczek-Popko, E.; Trzmiel, J.; Zielony, E.; Grzanka, S.; Czernecki, R.; Suski, T.

2009-12-01

In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequently Mg-doped GaN layers were grown. To perform DLTS measurements Ni/Au contacts to p-type material and Ti/Au contacts to n-type material were processed. DLTS signal spectra revealed the presence of two majority traps of activation energies obtained from Arrhenius plots equal to E1=0.22 eV and E2=0.65 eV. In present work we show that the trap E1 is linked with the extended defects whereas the trap E2 is the point defect related. Its capture cross section is thermally activated with energy barrier for capture equal to 0.2 eV.

Toward Rechargeable Persistent Luminescence for the First and Third Biological Windows via Persistent Energy Transfer and Electron Trap Redistribution.

PubMed

Xu, Jian; Murata, Daisuke; Ueda, Jumpei; Viana, Bruno; Tanabe, Setsuhisa

2018-05-07

Persistent luminescence (PersL) imaging without real-time external excitation has been regarded as the next generation of autofluorescence-free optical imaging technology. However, to achieve improved imaging resolution and deep tissue penetration, developing new near-infrared (NIR) persistent phosphors with intense and long duration PersL over 1000 nm is still a challenging but urgent task in this field. Herein, making use of the persistent energy transfer process from Cr 3+ to Er 3+ , we report a novel garnet persistent phosphor of Y 3 Al 2 Ga 3 O 12 codoped with Er 3+ and Cr 3+ (YAG G:Er-Cr), which shows intense Cr 3+ PersL (∼690 nm) in the deep red region matching well with the first biological window (NIR-I, 650-950 nm) and Er 3+ PersL (∼1532 nm) in the NIR region matching well with the third biological window (NIR-III, 1500-1800 nm). The optical imaging through raw-pork tissues (thickness of 1 cm) suggests that the emission band of Er 3+ can achieve higher spatial resolution and more accurate signal location than that of Cr 3+ due to the reduced light scattering at longer wavelengths. Furthermore, by utilizing two independent electron traps with two different trap depths in YAG G:Er-Cr, the Cr 3+ /Er 3+ PersL can even be recharged in situ by photostimulation with 660 nm LED thanks to the redistribution of trapped electrons from the deep trap to the shallow one. Our results serve as a guide in developing promising NIR (>1000 nm) persistent phosphors for long-term optical imaging.

Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

PubMed

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

Effect of Ga3+ and Gd3+ ions substitution on the structural and optical properties of Ce3+ -doped yttrium aluminium garnet phosphor nanopowders.

PubMed

Wako, A H; Dejene, F B; Swart, H C

2016-11-01

The structural and optical properties of commercially obtained Y 3 Al 5 O 12 :Ce 3 + phosphor were investigated by replacing Al 3 + with Ga 3 + and Y 3 + with Gd 3 + in the Y 3 Al 5 O 12 :Ce 3 + structure to form Y 3 (Al,Ga) 5 O 12 :Ce 3 + and (Y,Gd) 3 Al 5 O 12 :Ce 3 + . X-Ray diffraction (XRD) results showed slight 2-theta peak shifts to lower angles when Ga 3 + was used and to higher angles when Gd 3 + was used, with respect to peaks from Y 3 Al 5 O 12 :Ce 3 + and JCPDS card no. 73-1370. This could be attributed to induced crystal-field effects due to the different ionic sizes of Ga 3 + and Gd 3 + compared with Al 3 + and Y 3 + . The photoluminescence (PL) spectra showed broad excitation from 350 to 550 nm with a maximum at 472 nm, and broad emission bands from 500 to 650 nm, centred at 578 nm for Y 3 Al 5 O 12 :Ce 3 + arising from the 5d → 4f transition of Ce 3 + . PL revealed a blue shift for Ga 3 + substitution and a red shift for Gd 3 + substitution. UV-Vis showed two absorption peaks at 357 and 457 nm for Y 3 Al 5 O 12 :Ce 3 + , with peaks shifting to 432 nm for Ga 3 + and 460 nm for Gd 3 + substitutions. Changes in the trap levels or in the depth and number of traps due to Ce 3 + were analysed using thermoluminescence (TL) spectroscopy. This revealed the existence of shallow and deep traps. It was observed that Ga 3 + substitution contributes to the shallowest traps at 74 °C and fewer deep traps at 163 °C, followed by Gd 3 + with shallow traps at 87 °C and deep traps at 146 °C. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Electrical flicker-noise generated by filling and emptying of impurity states in injectors of quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamanishi, Masamichi, E-mail: masamiya@crl.hpk.co.jp; Hirohata, Tooru; Hayashi, Syohei

2014-11-14

Free running line-widths (>100 kHz), much broader than intrinsic line-widths ∼100 Hz, of existing quantum-cascade lasers are governed by strong flicker frequency-noise originating from electrical flicker noise. Understanding of microscopic origins of the electrical flicker noises in quantum-cascade lasers is crucially important for the reduction of strength of flicker frequency-noise without assistances of any type of feedback schemes. In this article, an ad hoc model that is based on fluctuating charge-dipoles induced by electron trappings and de-trappings at indispensable impurity states in injector super-lattices of a quantum-cascade laser is proposed, developing theoretical framework based on the model. The validity of the presentmore » model is evaluated by comparing theoretical voltage-noise power spectral densities based on the model with experimental ones obtained by using mid-infrared quantum-cascade lasers with designed impurity-positioning. The obtained experimental results on flicker noises, in comparison with the theoretical ones, shed light on physical mechanisms, such as the inherent one due to impurity states in their injectors and extrinsic ones due to surface states on the ridge-walls and due to residual deep traps, for electrical flicker-noise generation in existing mid-infrared quantum-cascade lasers. It is shown theoretically that quasi-delta doping of impurities in their injectors leads to strong suppression of electrical flicker noise by minimization of the dipole length at a certain temperature, for instance ∼300 K and, in turn, is expected to result in substantial narrowing of the free running line-width down below 10 kHz.« less

A simple technique for trapping Siren lacertina, Amphiuma means, and other aquatic vertebrates

USGS Publications Warehouse

Johnson, S.A.; Barichivich, W.J.

2004-01-01

We describe a commercially-available funnel trap for sampling aquatic vertebrates. The traps can be used in heavily vegetated wetlands and can be set in water up to 60 cm deep without concern for drowning the animals. They were especially useful for capturing the aquatic salamanders Siren lacertina and Amphiuma means, which have been difficult to capture with traditional sampling methods. They also were effective for sampling small fishes, particularly centrarchids, and larval anurans. In total, 14 species of amphibians, nine species of aquatic reptiles, and at least 32 fish species were captured. The trap we describe differs significantly from traditional funnel traps (e.g., minnow traps) and holds great promise for studies of small, aquatic vertebrates, in particular Siren and Amphiuma species.

Effects of Plasma Hydrogenation on Trapping Properties of Dislocations in Heteroepitaxial InP/GaAs

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Chatterjee, B.

1994-01-01

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approx. 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogen passivation. It is further shown that the "apparent" activation energies of dislocation related deep levels, before and after passivation, reduce by approx. 70 meV as DLTS fill pulse times are increased from 1 usec. to 1 msec. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Interface investigation of solution processed high- κ ZrO2/Si MOS structure by DLTS

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Rao, Ksr Koteswara

The interfacial region is dominating due to the continuous downscaling and integration of high- k oxides in CMOS applications. The accurate characterization of high- k oxides/semiconductor interface has the significant importance towards its usage in memory and thin film devices. The interface traps at the high - k /semiconductor interface can be quantified by deep level transient spectroscopy (DLTS) with better accuracy in contrast to capacitance-voltage (CV) and conductance technique. We report the fabrication of high- k ZrO2 films on p-Si substrate by a simple and inexpensive sol-gel spin-coating technique. Further, the ZrO2/Si interface is characterized through DLTS. The flat-band voltage (VFB) and the density of slow interface states (oxide trapped charges) extracted from CV characteristics are 0.37 V and 2x10- 11 C/cm2, respectively. The activation energy, interface state density and capture cross-section quantified by DLTS are EV + 0.42 eV, 3.4x1011 eV- 1 cm- 2 and 5.8x10- 18 cm2, respectively. The high quality ZrO2 films own high dielectric constant 15 with low leakage current density might be an appropriate insulating layer in future electronic application. The low value of interface state density and capture cross-section are the indication of high quality interface and the defect present at the interface may not affect the device performance to a great extent. The DLTS study provides a broad understanding about the traps present at the interface of spin-coated ZrO2/Si.

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

2018-02-01

InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

NASA Astrophysics Data System (ADS)

Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

2014-03-01

Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

Luminescence and conductivity studies on CVD diamond exposed to UV light

NASA Astrophysics Data System (ADS)

Bizzarri, A.; Bogani, F.; Bruzzi, M.; Sciortino, S.

1999-04-01

The photoluminescence (PL), thermoluminescence (TL) and thermally stimulated currents (TSC) of four high-quality CVD diamond films have been investigated in the range of temperatures between 300 and 700 K. The sample excitation has been carried out by means of an UV xenon lamp and UV laser lines. The features of the signals have been found equal to those obtained from particle excitation. The TL analysis shows the existence of several deep traps with activation energies between 0.6 and 1.0 eV. The contribution to the TL signal from different traps has been singled out by means of successive annealing processes. The TL results are in good agreement with those obtained from TSC measurements. The combined use of the two techniques allows a precise determination of the trap parameters. The spectral content of the TL response has also been compared with the PL signal in order to investigate the recombination process. This analysis shows that, in this temperature range, the TL signal is likely due to recombination from bound states rather than due to radiative free to bound transitions, as generally assumed in TL theory. The TSC signal is likely to arise from impurity band rather than from free carriers conduction.

Quantum levitation of nanoparticles seen with ultracold neutrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nesvizhevsky, V. V., E-mail: nesvizhevsky@ill.eu; Voronin, A. Yu.; Lambrecht, A.

2013-09-15

Analyzing new experiments with ultracold neutrons (UCNs) we show that physical adsorption of nanoparticles/nanodroplets, levitating in high-excited states in a deep and broad potential well formed by van der Waals/Casimir-Polder (vdW/CP) forces results in new effects on a cross-road of the fields of fundamental interactions, neutron, surface and nanoparticle physics. Accounting for the interaction of UCNs with nanoparticles explains a recently discovered intriguing so-called 'small heating' of UCNs in traps. It might be relevant to the striking conflict of the neutron lifetime experiments with smallest reported uncertainties by adding false effects there.

Functional Sub-states by High-pressure Macromolecular Crystallography.

PubMed

Dhaussy, Anne-Claire; Girard, Eric

2015-01-01

At the molecular level, high-pressure perturbation is of particular interest for biological studies as it allows trapping conformational substates. Moreover, within the context of high-pressure adaptation of deep-sea organisms, it allows to decipher the molecular determinants of piezophily. To provide an accurate description of structural changes produced by pressure in a macromolecular system, developments have been made to adapt macromolecular crystallography to high-pressure studies. The present chapter is an overview of results obtained so far using high-pressure macromolecular techniques, from nucleic acids to virus capsid through monomeric as well as multimeric proteins.

Profiling of barrier capacitance and spreading resistance using a transient linearly increasing voltage technique.

PubMed

Gaubas, E; Ceponis, T; Kusakovskij, J

2011-08-01

A technique for the combined measurement of barrier capacitance and spreading resistance profiles using a linearly increasing voltage pulse is presented. The technique is based on the measurement and analysis of current transients, due to the barrier and diffusion capacitance, and the spreading resistance, between a needle probe and sample. To control the impact of deep traps in the barrier capacitance, a steady state bias illumination with infrared light was employed. Measurements of the spreading resistance and barrier capacitance profiles using a stepwise positioned probe on cross sectioned silicon pin diodes and pnp structures are presented.

The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals

NASA Astrophysics Data System (ADS)

Wang, Pengfei; Nan, Ruihua; Jian, Zengyun

2017-06-01

The deep-level defects of CdZnTe (CZT) crystals grown by the modified vertical Bridgman (MVB) method act as trapping centers or recombination centers in the band gap, which have significant effects on its electrical properties. The resistivity and electron mobility-lifetime product of high resistivity Cd0.9Zn0.1Te wafer marked CZT1 and low resistivity Cd0.9Zn0.1Te wafer marked CZT2 were tested respectively. Their deep-level defects were identified by thermally stimulated current (TSC) spectroscopy and thermoelectric effect spectroscopy (TEES) respectively. Then the trap-related parameters were characterized by the simultaneous multiple peak analysis (SIMPA) method. The deep donor level ({E}{{DD}}) dominating dark current was calculated by the relationship between dark current and temperature. The Fermi-level was characterized by current-voltage measurements of temperature dependence. The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy. The results show the traps concentration and capture cross section of CZT1 are lower than CZT2, so its electron mobility-lifetime product is greater than CZT2. The Fermi-level of CZT1 is closer to the middle gap than CZT2. The degree of Fermi-level pinned by {E}{{DD}} of CZT1 is larger than CZT2. It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges. Project supported by the National Natural Science Foundation of China (No. 51502234) and the Scientific Research Plan Projects of Shaanxi Provincial Department of Education of China (No. 15JS040).

Variability of Secchi disk readings in an exceptionally clear and deep caldera lake

USGS Publications Warehouse

Larson, Gary L.; Buktenica, M.W.

1998-01-01

SUMMARY: The Peromyscus leucopus on a 17-acre study area were live-trapped, marked, and released over a seven-day period. On the three following nights intensive snap-trapping was done on the central acre of the study plot. The animals caught by snap traps in the central acre represented the population of the central acre and several surrounding acres. By the currently accepted methods of interpreting snap-trap data, the population per acre would be considered to be 23 adults. The live-trap data show that the true population was between six and seven adults per acre. Modern methods of live-trapping are shown to be valid for population studies. Two methods are presented for the conversion of live-trap data into per acre figures. Errors involved in the current use of snap-trap data are discussed and snap-trap methods are shown to be invalid for determining actual population numbers. It should be practical to use a snap-trap quadrant technique to obtain a relative measure or index figure for small mammal populations.

Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

NASA Astrophysics Data System (ADS)

Häusermann, Roger; Chauvin, Sophie; Facchetti, Antonio; Chen, Zhihua; Takeya, Jun; Batlogg, Bertram

2018-04-01

The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range.

Localised states in organic semiconductors and their detection

NASA Astrophysics Data System (ADS)

Imperia, Paolo

2002-06-01

New polymers and low molecular compounds, suitable for organic light emitting devices and organic electronic applications, have been synthesised in this years in order to obtain electron transport characteristics compatible with requirements for applications in real plastic devices. However, despite of the technological importance and of the relevant progress in devices manufacture, fundamental physical properties of such class of materials are still not enough studied. In particular extensive presence of distributions of localised states inside the band gap has a deep impact on their electronic properties. Such presence of shallow traps as well as the influence of the sample preparation conditions on deep and shallow localised states have not been, until now, systematically explored. The thermal techniques are powerful tools in order to study localised levels in inorganic and organic materials. Thermally stimulated luminescence (TSL), thermally stimulated currents (TSC) and thermally stimulated depolarisation currents (TSDC) allow to deeply look to shallow and deep trap levels as well as they permit to study, in synergy with dielectric spectroscopy (DES), polarisation and depolarisation effects. We studied, by means of numerical simulations, the first and the second order kinetic equations characterised by negligible and strong re-trapping respectively. We included in the equations Gaussian, exponential and quasi-continuous distributions of localised states. The shapes of the theoretical peaks have been investigated by means of systematic variation of the two main parameters of the equations, i. e. the energy trap depth E and the frequency factor a and of the parameters regulating the distributions, in particular for a Gaussian distribution the distribution width s and the integration limits. The theoretical findings have been applied to experimental glow curves. Thin films of polymers and low molecular compounds. Polyphenylquinoxalines, trisphenylquinoxalines and oxadiazoles, studied because of their technological relevance, show complex thermograms, having several levels of localised states and depolarisation peaks. In particular well ordered films of an amphiphilic substituted 2-(p-nitrophenyl)-5-(p-undecylamidophenyl)-1,3,4-oxadiazole (NADPO) are characterised by rich TSL thermograms. A wide region of shallow traps, localised at Em = 4 meV, has been successfully fit by means of a first order kinetic equation having a Gaussian distribution of localised states. Two further peaks, having a different origin, have been characterised. The peaks at Tm = 221.5 K and Tm = 254.2 have activation energy of Em= 0.63 eV and Em = 0.66 eV, frequency factor s = 2.4x1012 s-1 and s = 1.85x1011 s-1, distribution width s = 0.045 eV and s = 0.088 eV respectively. Increasing the number of thermal cycle, a peak, probably connected with structural defects, appears at Tm = 197.7 K. The numerical analysis of this peak was performed by means of a first order equation containing a Gaussian distribution of traps. The activation energy of the trap level is centred at Em = 0.55 eV. The distribution is perfectly symmetric with a quite small width s = 0.028 eV. The frequency factor is s = 1.15 x 1012 s-1, resulting of the same order of magnitude of its neighbour peak at Tm = 221.5 K, having both, probably, the same origin. Furthermore the work demonstrates that the shape of the glow curves is strongly influenced by the excitation temperature and by the thermal cycles. For that reason Gaussian distributions of localised states can be confused with exponential distributions if the previous thermal history of the samples is not adequately considered. In den letzten Jahren ist eine Vielzahl neuer organischer Polymere und niedermolekularer Verbindungen synthetisiert worden, die sich als aktive Komponente für Elektrolumineszenz-Bauelemente und andere elektronische Anwendungen eignen. Trotz der großen technologischen Bedeutung und des erheblichen Fortschrittes, der bei der Herstellung solcher Materialien erzielt worden ist, sind grundlegende physikalische Eigenschaften dieser Materialklassen noch nicht ausreichend erforscht. Insbesondere das Auftreten lokalisierter Zustände innerhalb der Bandlücke hat besondere Bedeutung für ihre elektronischen Eigenschaften. Sowohl die Präsenz dieser flachen traps (Fallen, Löcher) als auch der Einfluß der Herstellungsbedingungen auf die tiefen und flachen lokalisierten Zustände wurden bisher nicht systematisch untersucht. Thermische Techniken sind wichtige Methoden, um lokalisierte Niveaus in organischen und anorganischen Materialien zu erforschen. Themisch-Stimulierte Lumineszenz (TSL), Thermisch-Stimulierte Ströme (TSC) und Thermisch-Stimulierte Depolarisierte Ströme (TSDC) ermöglichen die Untersuchung flacher und tiefer traps; in Verbindung mit DiElektrischer Spektroskopie (DES) können außerdem Polarisations- und Depolarisationseffekte studiert werden. Mit Hilfe numerischer Simulationen haben wir die kinetischen Gleichungen erster und zweiter Ordnung untersucht, die sich durch schwaches bzw. starkes Wieder-Fangen beschreiben lassen. In diesen Gleichungen haben wir Gaussian-, exponentielle und quasi-kontinuierliche Verteilungen von lokalisierten Zustände berücksichtigt. Durch Veränderung der beiden wichtigsten Parameter (Tiefe der traps E und Häufigkeit) konnte die Form der thermischen Maxima untersucht werden. Auch die die Gaussian-Verteilung bestimmenden Faktoren wurden verändert. Diese theoretischen Ergebnisse wurden auf die experimentellen Glow-Kurven angewandt. Dünne Filme aus polymeren und niedermolekularen Verbindungen (Polyphenylquinoxaline, Trisphenylquinoxaline und Oxadiazole), die wegen ihrer technologischen Bedeutung ausgewählt wurden, zeigen komplexes thermisches Verhalten. Insbesondere hoch geordnete Filme eines amphiphil substituierten 2-(p-nitrophenyl)-5-(p-undecylamidophenyl)-1,3,4-oxadiazols (NADPO) zeichnen sich durch komplexe TSL-Diagramme aus. Im Bereich von Em = 4 meV wurde eine Region flacher traps gefunden. Zwei weitere TSL-Maxima treten bei Tm = 221.5 K bzw. Tm = 254.2 K auf. Sie besitzen Aktivierungsenergien von Em= 0.63 eV bzw. Em = 0.66 eV, ihre Frequenzfaktoren betragen s = 2.4x1012 s-1 bzw. s = 1.85x1011 s-1, sie zeigen Breiten der Verteilung von s = 0.045 eV bzw. s = 0.088 eV. Des weiteren zeigt diese Arbeit, daß die Form der Glow-Kurven stark von der Anregungstemperatur und vom thermischen Kreislauf beeinflußt wird.

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yakimov, E. B.; Yang, Jiancheng; Ren, F.; Yang, Gwangseok; Kim, Jihyun; Kuramata, A.; Pearton, S. J.

2018-01-01

Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

Morphology and crystalline-phase-dependent electrical insulating properties in tailored polypropylene for HVDC cables

NASA Astrophysics Data System (ADS)

Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

2016-11-01

Polypropylene (PP) has become one promising material to potentially replace the cross-link polyethylene used for high voltage direct current cables. Besides the isotactic polypropylene, the block polypropylene (b-PP) and random polypropylene (r-PP) can be synthesized through the copolymerization of ethylene and propylene molecules. In this letter, the effect of morphology and crystalline phases on the insulating electrical properties of PP was investigated. It was found that the introduction of polyethylene monomer resulted in the formation of β and γ phases in b-PP and r-PP. The results from the characteristic trap energy levels indicated that the β and γ phases could induce deep electron traps which enable to capture the carriers. And the space charge accumulation was obviously suppressed. Besides, the decreased electrical conductivity was observed in b-PP and r-PP. It is attributed to the existence of deep traps which can effectively reduce the carrier mobility and density in materials.

Long charged macromolecule in an entropic trap with rough surfaces.

PubMed

Mamasakhlisov, Yevgeni Sh; Hayryan, Shura; Hu, Chin-Kun

2012-11-01

The kinetics of the flux of a charged macromolecular solution through an environment of changing geometry with wide and constricted regions is investigated analytically. A model device consisting of alternating deep and shallow slits known as an "entropic trap" is used to represent the environment. The flux is supported by the external electrostatic field. The "wormlike chain" model is used for the macromolecule (dsDNA in the present study). The chain entropy in both the deep and the shallow slits, the work by the electric field, and the energy of the elastic bending of the chain are taken into account accurately. Based on the calculated free energy, the kinetics and the scaling behavior of the chain escaping from the entropic trap are studied. We find that the escape process occurs in two kinetic stages with different time scales and discuss the possible influence of the surface roughness. The scope of the accuracy of the proposed model is discussed.

Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Chatterjee, B.

1994-01-01

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Influence of energy band alignment in mixed crystalline TiO2 nanotube arrays: good for photocatalysis, bad for electron transfer

NASA Astrophysics Data System (ADS)

Mohammadpour, Raheleh

2017-12-01

Despite the wide application ranges of TiO2, the precise explanation of the charge transport dynamic through a mixed crystal phase of this semiconductor has remained elusive. Here, in this research, mixed-phase TiO2 nanotube arrays (TNTAs) consisting of anatase and 0-15% rutile phases has been formed through various annealing processes and employed as a photoelectrode of a photovoltaic cell. Wide ranges of optoelectronic experiments have been employed to explore the band alignment position, as well as the depth and density of trap states in TNTAs. Short circuit potential, as well as open circuit potential measurements specified that the band alignment of more than 0.2 eV exists between the anatase and rutile phase Fermi levels, with a higher electron affinity for anatase; this can result in a potential barrier in crystallite interfaces and the deterioration of electron mobility through mixed phase structures. Moreover, a higher density of shallow localized trap states below the conduction band with more depth (133 meV in anatase to 247 meV in 15% rutile phase) and also deep oxygen vacancy traps have been explored upon introducing the rutile phase. Based on our results, employing TiO2 nanotubes as just the electron transport medium in mixed crystalline phases can deteriorate the charge transport mechanism, however, in photocatalytic applications when both electrons and holes are present, a robust charge separation in crystalline anatase/rutile interphases will result in better performances.

Single molecule force spectroscopy at high data acquisition: A Bayesian nonparametric analysis

NASA Astrophysics Data System (ADS)

Sgouralis, Ioannis; Whitmore, Miles; Lapidus, Lisa; Comstock, Matthew J.; Pressé, Steve

2018-03-01

Bayesian nonparametrics (BNPs) are poised to have a deep impact in the analysis of single molecule data as they provide posterior probabilities over entire models consistent with the supplied data, not just model parameters of one preferred model. Thus they provide an elegant and rigorous solution to the difficult problem encountered when selecting an appropriate candidate model. Nevertheless, BNPs' flexibility to learn models and their associated parameters from experimental data is a double-edged sword. Most importantly, BNPs are prone to increasing the complexity of the estimated models due to artifactual features present in time traces. Thus, because of experimental challenges unique to single molecule methods, naive application of available BNP tools is not possible. Here we consider traces with time correlations and, as a specific example, we deal with force spectroscopy traces collected at high acquisition rates. While high acquisition rates are required in order to capture dwells in short-lived molecular states, in this setup, a slow response of the optical trap instrumentation (i.e., trapped beads, ambient fluid, and tethering handles) distorts the molecular signals introducing time correlations into the data that may be misinterpreted as true states by naive BNPs. Our adaptation of BNP tools explicitly takes into consideration these response dynamics, in addition to drift and noise, and makes unsupervised time series analysis of correlated single molecule force spectroscopy measurements possible, even at acquisition rates similar to or below the trap's response times.

Investigations related to scientific deep drilling to study reservoir-triggered earthquakes at Koyna, India

NASA Astrophysics Data System (ADS)

Gupta, Harsh; Purnachandra Rao, N.; Roy, Sukanta; Arora, Kusumita; Tiwari, V. M.; Patro, Prasanta K.; Satyanarayana, H. V. S.; Shashidhar, D.; Mallika, K.; Akkiraju, Vyasulu V.; Goswami, Deepjyoti; Vyas, Digant; Ravi, G.; Srinivas, K. N. S. S. S.; Srihari, M.; Mishra, S.; Dubey, C. P.; Raju, D. Ch. V.; Borah, Ujjal; Chinna Reddy, K.; Babu, Narendra; Rohilla, Sunil; Dhar, Upasana; Sen, Mrinal; Bhaskar Rao, Y. J.; Bansal, B. K.; Nayak, Shailesh

2015-09-01

Artificial water reservoir-triggered earthquakes have continued at Koyna in the Deccan Traps province, India, since the impoundment of the Shivaji Sagar reservoir in 1962. Existing models, to comprehend the genesis of triggered earthquakes, suffer from lack of observations in the near field. To investigate further, scientific deep drilling and setting up a fault zone observatory at depth of 5-7 km is planned in the Koyna area. Prior to undertaking deep drilling, an exploratory phase of investigations has been launched to constrain subsurface geology, structure and heat flow regime in the area that provide critical inputs for the design of the deep borehole observatory. Two core boreholes drilled to depths of 1,522 and 1,196 m have penetrated the Deccan Traps and sampled the granitic basement in the region for the first time. Studies on cores provide new and direct information regarding the thickness of the Deccan Traps, the absence of infra-Trappean sediments and the nature of the underlying basement rocks. Temperatures estimated at a depth of 6 km in the area, made on the basis of heat flow and thermal properties data sets, do not exceed 150 °C. Low-elevation airborne gravity gradient and magnetic data sets covering 5,012 line km, together with high-quality magnetotelluric data at 100 stations, provide both regional information about the thickness of the Deccan Traps and the occurrence of localized density heterogeneities and anomalous conductive zones in the vicinity of the hypocentral zone. Acquisition of airborne LiDAR data to obtain a high-resolution topographic model of the region has been completed over an area of 1,064 km2 centred on the Koyna seismic zone. Seismometers have been deployed in the granitic basement inside two boreholes and are planned in another set of six boreholes to obtain accurate hypocentral locations and constrain the disposition of fault zones.

Prophylactic Placement of an Inferior Vena Cava Filter During Aspiration Thrombectomy for Acute Deep Venous Thrombosis of the Lower Extremity.

PubMed

Kwon, Se Hwan; Park, So Hyun; Oh, Joo Hyeong; Song, Myung Gyu; Seo, Tae-Seok

2016-05-01

To evaluate the effect of an inferior vena cava (IVC) filter during aspiration thrombectomy for acute deep vein thrombosis (DVT) in the lower extremity. From July 2004 to December 2013, a retrospective analysis of 106 patients with acute DVT was performed. All patients received an IVC filter and were treated initially with aspiration thrombectomy. Among the 106 patients, DVT extension into the IVC was noted in 27 but was not evident in 79. We evaluated the presence of trapped thrombi in the filters after the procedure. The sizes of the trapped thrombi were classified into 2 grades based on the ratio of the maximum transverse length of the trapped thrombus to the diameter of the IVC (Grades I [≤ 50%] and II [> 50%]). A trapped thrombus in the filter was detected in 46 (43%) of 106 patients on final venograms. The sizes of the trapped thrombi were grade I in 12 (26.1%) patients and grade II in 34 (73.9%). Among the 27 patients with DVT extension into the IVC, 20 (74.1%) showed a trapped thrombus in the filter, 75% (15 of 20) of which were grade II. Among the 79 patients without DVT extension into the IVC, 26 (32.9%) showed a trapped thrombus in the IVC filter, 73% (19 of 26) of which were grade II. Thrombus migration occurred frequently during aspiration thrombectomy of patients with acute DVT in the lower extremity. However, further studies are needed to establish a standard protocol for the prophylactic placement of an IVC filter during aspiration thrombectomy. © The Author(s) 2016.

Two stages of deformation and fluid migration in the central Brooks Range fold-and-thrust belt

USGS Publications Warehouse

Moore, Thomas E.; Potter, Christopher J.; O'Sullivan, Paul B.; Shelton, Kevin L.; Underwood, Michael B.

2004-01-01

We conclude that hydrocarbon generation from Triassic and Jurassic source strata and migration into stratigraphic traps occurred primarily by sedimentary burial principally at 100-90 Ma, between the times of the two major episodes of deformation. Subsequent sedimentary burial caused deep stratigraphic traps to become overmature, cracking oil to gas, and initiated some new hydrocarbon generation progressively higher in the section. Structural disruption of the traps in the early Tertiary released sequestered hydrocarbons. The hydrocarbons remigrated into newly formed structural traps, which formed at higher structural levels or were lost to the surface. Because of the generally high maturation of the Colville basin at the time of the deformation and remigration, most of the hydrocarbons available to fill traps were gas.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

NASA Astrophysics Data System (ADS)

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-01

The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method.

PubMed

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-27

The threshold voltage instabilities and huge hysteresis of MoS 2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS 2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS 2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS 2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Uncovering the density of nanowire surface trap states hidden in the transient photoconductance.

PubMed

Xu, Qiang; Dan, Yaping

2016-09-21

The gain of nanoscale photoconductors is closely correlated with surface trap states. Mapping out the density of surface trap states in the semiconductor bandgap is crucial for engineering the performance of nanoscale photoconductors. Traditional capacitive techniques for the measurement of surface trap states are not readily applicable to nanoscale devices. Here, we demonstrate a simple technique to extract the information on the density of surface trap states hidden in the transient photoconductance that is widely observed. With this method, we found that the density of surface trap states of a single silicon nanowire is ∼10(12) cm(-2) eV(-1) around the middle of the upper half bandgap.

Mechanism of high-fluence proton induced electrical degradation in AlGaN/GaN high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Lei, Zhifeng; Guo, Hongxia; Tang, Minghua; Peng, Chao; Zhang, Zhangang; Huang, Yun; En, Yunfei

2018-07-01

The effects of displacement damage induced by 3 and 6 MeV protons in AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated. For the 6 MeV protons at a dose of 5 × 1014 cm‑2, a 12% decrease in saturation current, a 3.8% decrease in the peak transconductance, a 0.3 V positive shift of the threshold voltage, and a three-to fourfold decrease in reverse gate leakage current are observed compared with the pre-irradiation values. The main degradation mechanism is considered to be the generation of deep trap states in the band gap, which remove electrons and reduce the carrier mobility in a two-dimensional electron gas (2DEG). Both the carrier removal rate and negatively charged trap density can be extracted, which shows that about 3500 proton injections lead to one carrier removal. Proton fluence and energy are found to be two key parameters that affect the degradation characteristics of irradiated GaN HEMTs.

Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

NASA Astrophysics Data System (ADS)

Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

2018-02-01

The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

Absence of Intramolecular Singlet Fission in Pentacene-Perylenediimide Heterodimers: The Role of Charge Transfer State.

PubMed

Wang, Long; Wu, Yishi; Chen, Jianwei; Wang, Lanfen; Liu, Yanping; Yu, Zhenyi; Yao, Jiannian; Fu, Hongbing

2017-11-16

A new class of donor-acceptor heterodimers based on two singlet fission (SF)-active chromophores, i.e., pentacene (Pc) and perylenediimide (PDI), was developed to investigate the role of charge transfer (CT) state on the excitonic dynamics. The CT state is efficiently generated upon photoexcitation. However, the resulting CT state decays to different energy states depending on the energy levels of the CT state. It undergoes extremely rapid deactivation to the ground state in polar CH 2 Cl 2 , whereas it undergoes transformation to a Pc triplet in nonpolar toluene. The efficient triplet generation in toluene is not due to SF but CT-mediated intersystem crossing. In light of the energy landscape, it is suggested that the deep energy level of the CT state relative to that of the triplet pair state makes the CT state actually serve as a trap state that cannot undergoes an intramolecular singlet fission process. These results provide guidance for the design of SF materials and highlight the requisite for more widely applicable design principles.

TRAP abortion laws and partisan political party control of state government.

PubMed

Medoff, Marshall H; Dennis, Christopher

2011-01-01

Targeted Regulation of Abortion Providers (or TRAP) laws impose medically unnecessary and burdensome regulations solely on abortion providers in order to make abortion services more expensive and difficult to obtain. Using event history analysis, this article examines the determinants of the enactment of a TRAP law by states over the period 1974–2008. The empirical results find that Republican institutional control of a state's legislative/executive branches is positively associated with a state enacting a TRAP law, while Democratic institutional control is negatively associated with a state enacting a TRAP law. The percentage of a state's population that is Catholic, public anti-abortion attitudes, state political ideology, and the abortion rate in a state are statistically insignificant predictors of a state enacting a TRAP law. The empirical results are consistent with the hypothesis that abortion is a redistributive issue and not a morality issue.

The tropopause cold trap in the Australian Monsoon during STEP/AMEX 1987

NASA Technical Reports Server (NTRS)

Selkirk, Henry B.

1993-01-01

The relationship between deep convection and tropopause cold trap conditions is examined for the tropical northern Australia region during the 1986-87 summer monsoon season, emphasizing the Australia Monsoon Experiment (AMEX) period when the NASA Stratosphere-Troposphere Exchange Project (STEP) was being conducted. The factors related to the spatial and temporal variability of the cold point potential temperature (CPPT) are investigated. A framework is developed for describing the relationships among surface average equivalent potential temperature in the surface layer (AEPTSL) the height of deep convection, and stratosphere-troposphere exchange. The time-mean pattern of convection, large-scale circulation, and surface AEPTSL in the Australian monsoon and the evolution of the convective environment during the monsoon period and the extended transition season which preceded it are described. The time-mean fields of cold point level variables are examined and the statistical relationships between mean CPPT, surface AEPTSL, and deep convection are described. Day-to-day variations of CPPT are examined in terms of these time mean relationships.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cerbu, F.; Madia, O.; Afanas'ev, V. V.

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behaviormore » of HfO{sub 2}, suggesting that alternative defect models should be considered.« less

Dependence of mobility on shallow localized gap states in single-crystal organic field-effect-transistors

NASA Astrophysics Data System (ADS)

Butko, V. Y.; So, W.; Lang, D. V.; Chi, X.; Lashley, J. C.; Ramirez, A. P.

2009-12-01

In order to optimize the performance of molecular organic electronic devices it is important to study the intermolecular density of states and charge transport mechanisms in the environment of crystalline organic material. Using this approach in Field Effect Transistors (FETs) we show that material purification improves carrier mobility and decreases density of the deep localized electronic state. We also report a general exponential energy dependence of the density of localized states in a vicinity of the mobility edge (Fermi energies up to ∼7 times higher than the thermal energy (kT)) in a variety of the extensively purified molecular organic crystal FETs. This observation and the low activation energy of the order of ∼kT suggest that molecular structural misplacements of the sizes that are comparable with thermal molecular modes rather than impurity deep traps play a role in formation of these shallow states. We find that the charge carrier mobility in the FET nanochannels, μeff, is parameterized by two factors, the free-carrier mobility, μ0, and the ratio of the free carrier density to the total carrier density induced by gate bias. Crystalline FETs fabricated from rubrene, pentacene, and tetracene have a high free-carrier mobility, μ0∼50 cm2/Vs, at 300 K with lower device μeff dominated by localized shallow gap states. This relationship suggests that further improvements in electronic performance could be possible with enhanced device quality.

Pore scale study of multiphase multicomponent reactive transport during CO 2 dissolution trapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Li; Wang, Mengyi; Kang, Qinjun

Solubility trapping is crucial for permanent CO 2 sequestration in deep saline aquifers. For the first time, a pore-scale numerical method is developed to investigate coupled scCO 2-water two-phase flow, multicomponent (CO 2(aq), H +, HCO 3 –, CO 3 2 – and OH –) mass transport, heterogeneous interfacial dissolution reaction, and homogeneous dissociation reactions. Pore-scale details of evolutions of multiphase distributions and concentration fields are presented and discussed. Time evolutions of several variables including averaged CO 2(aq) concentration, scCO 2 saturation, and pH value are analyzed. Specific interfacial length, an important variable which cannot be determined but is requiredmore » by continuum models, is investigated in detail. Mass transport coefficient or efficient dissolution rate is also evaluated. The pore-scale results show strong non-equilibrium characteristics during solubility trapping due to non-uniform distributions of multiphase as well as slow mass transport process. Complicated coupling mechanisms between multiphase flow, mass transport and chemical reactions are also revealed. Lastly, effects of wettability are also studied. The pore-scale studies provide deep understanding of non-linear non-equilibrium multiple physicochemical processes during CO 2 solubility trapping processes, and also allow to quantitatively predict some important empirical relationships, such as saturation-interfacial surface area, for continuum models.« less

Pore scale study of multiphase multicomponent reactive transport during CO 2 dissolution trapping

DOE PAGES

Chen, Li; Wang, Mengyi; Kang, Qinjun; ...

2018-04-26

Solubility trapping is crucial for permanent CO 2 sequestration in deep saline aquifers. For the first time, a pore-scale numerical method is developed to investigate coupled scCO 2-water two-phase flow, multicomponent (CO 2(aq), H +, HCO 3 –, CO 3 2 – and OH –) mass transport, heterogeneous interfacial dissolution reaction, and homogeneous dissociation reactions. Pore-scale details of evolutions of multiphase distributions and concentration fields are presented and discussed. Time evolutions of several variables including averaged CO 2(aq) concentration, scCO 2 saturation, and pH value are analyzed. Specific interfacial length, an important variable which cannot be determined but is requiredmore » by continuum models, is investigated in detail. Mass transport coefficient or efficient dissolution rate is also evaluated. The pore-scale results show strong non-equilibrium characteristics during solubility trapping due to non-uniform distributions of multiphase as well as slow mass transport process. Complicated coupling mechanisms between multiphase flow, mass transport and chemical reactions are also revealed. Lastly, effects of wettability are also studied. The pore-scale studies provide deep understanding of non-linear non-equilibrium multiple physicochemical processes during CO 2 solubility trapping processes, and also allow to quantitatively predict some important empirical relationships, such as saturation-interfacial surface area, for continuum models.« less

Pore scale study of multiphase multicomponent reactive transport during CO2 dissolution trapping

NASA Astrophysics Data System (ADS)

Chen, Li; Wang, Mengyi; Kang, Qinjun; Tao, Wenquan

2018-06-01

Solubility trapping is crucial for permanent CO2 sequestration in deep saline aquifers. For the first time, a pore-scale numerical method is developed to investigate coupled scCO2-water two-phase flow, multicomponent (CO2(aq), H+, HCO3-, CO32- and OH-) mass transport, heterogeneous interfacial dissolution reaction, and homogeneous dissociation reactions. Pore-scale details of evolutions of multiphase distributions and concentration fields are presented and discussed. Time evolutions of several variables including averaged CO2(aq) concentration, scCO2 saturation, and pH value are analyzed. Specific interfacial length, an important variable which cannot be determined but is required by continuum models, is investigated in detail. Mass transport coefficient or efficient dissolution rate is also evaluated. The pore-scale results show strong non-equilibrium characteristics during solubility trapping due to non-uniform distributions of multiphase as well as slow mass transport process. Complicated coupling mechanisms between multiphase flow, mass transport and chemical reactions are also revealed. Finally, effects of wettability are also studied. The pore-scale studies provide deep understanding of non-linear non-equilibrium multiple physicochemical processes during CO2 solubility trapping processes, and also allow to quantitatively predict some important empirical relationships, such as saturation-interfacial surface area, for continuum models.

Unraveling the mechanism of ultraviolet-induced optical gating in Zn1-x Mg x O nanocrystal solid solution field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Park, Byoungnam

2018-03-01

We report ultraviolet (UV)-induced optical gating in a Zn1-x Mg x O nanocrystal solid solution (NCSS) field effect transistor (FET) through a systematic study in which UV-induced charge transport properties are probed as a function of Mg composition. Change in the electrical properties of Zn1-x Mg x O NCSS associated with electronic traps is investigated by field effect-modulated current-voltage characteristic curves in the dark and under illumination. Under UV illumination, significant threshold voltage shift to a more negative value in an n-channel Zn1-x Mg x O NCSS FET is observed. Importantly, as the Mg composition increases, the effect of UV illumination on the threshold voltage shift is alleviated. We found that threshold voltage shift as a function of Mg composition in the dark and under illumination is due to difference in the deep trap density in the Zn1-x Mg x O NCSS. This is supported by Mg composition dependent photoluminescence intensity in the visible range and reduced FET mobility with Mg addition. The presence of the deep traps and the corresponding trap energy levels in the Zn1-x Mg x O NCSS are ensured by photoelectron spectroscopy in air.

Effect of retrapping on the persistent luminescence in strontium silicate orange–yellow phosphor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xuhui; Yu, Xue, E-mail: yuyu6593@126.com; Zhou, Dacheng

2013-10-15

The orange–yellow long persistent luminescence in Sr{sub 3}SiO{sub 5}:Eu{sup 2+}, Er{sup 3+} with the chromaticity coordination of (0.48, 0.49) can persist for over 20 h above the recognizable intensity level (≥0.32 mcd/m{sup 2}) because of retrapping carriers by the deep traps. The incorporation of Er{sup 3+} into Sr{sub 3}SiO{sub 5}:Eu{sup 2+} generates a large number of shallow traps responsible for the fast decay component as well as deep traps responsible for the decay tail of the LPL. It demonstrates that the retrapping of the carrier released from a trap plays an important role in the persistent luminescence process. - Graphicalmore » abstract: LPL decay curves of Sr{sub 3−x−y}SiO{sub 5}:xEu{sup 2+}, yEr{sup 3+} (x=0.0025, y=0, 0.0025). Inset: Orange–yellow emission images recorded using a classic Reflex digital camera with exposure times varying with the persistent luminescence times. Display Omitted - Highlights: • The persistence time of Sr{sub 3}SiO{sub 5}:Eu{sup 2+}, Er{sup 3+} lasts over 20 h above the recognizable intensity level. • The incorporation of Er{sup 3+} into Sr{sub 3}SiO{sub 5}:Eu{sup 2+} generates a large number of shallow traps. • The experimental results provide an evidence for the retrapping process in LPL processes.« less

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

PubMed Central

2011-01-01

The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the properties of hole traps in a set of p-type Be-doped Al0.29Ga0.71As samples grown by molecular beam epitaxy on (100) and (311)A GaAs substrates using deep level transient spectroscopy (DLTS) technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 1016 to 1 × 1017 cm-3 the number of detected electrically active defects decreases for samples grown on (311)A substrate, whereas, it increases for (100) orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311)A are lower than those in (100). From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311)A should be higher than those on (100). PMID:21711687

Progress Report on the Improved Linear Ion Trap Physics Package

NASA Technical Reports Server (NTRS)

Prestage, John D.

1995-01-01

This article describes the first operational results from the extended linear ion trap frequency standard now being developed at JPL. This new design separates the state selection/interrogation region from the more critical microwave resonance region where the multiplied local oscillator (LO) signal is compared to the stable atomic transition. Hg+ ions have been trapped, shuttled back and forth between the resonance and state selection traps. In addition, microwave transitions between the Hg+ clock levels have been driven in the resonance trap and detected in the state selection trap.

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

NASA Technical Reports Server (NTRS)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Sub-mm Scale Fiber Guided Deep/Vacuum Ultra-Violet Optical Source for Trapped Mercury Ion Clocks

NASA Technical Reports Server (NTRS)

Yi, Lin; Burt, Eric A.; Huang, Shouhua; Tjoelker, Robert L.

2013-01-01

We demonstrate the functionality of a mercury capillary lamp with a diameter in the sub-mm range and deep ultraviolet (DUV)/ vacuum ultraviolet (VUV) radiation delivery via an optical fiber integrated with the capillary. DUV spectrum control is observed by varying the fabrication parameters such as buffer gas type and pressure, capillary diameter, electrical resonator design, and temperature. We also show spectroscopic data of the 199Hg+ hyper-fine transition at 40.5GHz when applying the above fiber optical design. We present efforts toward micro-plasma generation in hollow-core photonic crystal fiber with related optical design and theoretical estimations. This new approach towards a more practical DUV optical interface could benefit trapped ion clock developments for future ultra-stable frequency reference and time-keeping applications.

Effect of antimony on the deep-level traps in GaInNAsSb thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul

2014-09-15

Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

Distinguishing triplet energy transfer and trap-assisted recombination in multi-color organic light-emitting diode with an ultrathin phosphorescent emissive layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Qin, E-mail: xueqin19851202@163.com; Liu, Shouyin; Xie, Guohua

2014-03-21

An ultrathin layer of deep-red phosphorescent emitter tris(1-phenylisoquinoline) iridium (III) (Ir(piq){sub 3}) is inserted within different positions of the electron blocking layer fac-tris (1-phenylpyrazolato-N,C{sup 2′})-iridium(III) (Ir(ppz){sub 3}) to distinguish the contribution of the emission from the triplet exciton energy transfer/diffusion from the adjacent blue phosphorescent emitter and the trap-assisted recombination from the narrow band-gap emitter itself. The charge trapping effect of the narrow band-gap deep-red emitter which forms a quantum-well-like structure also plays a role in shaping the electroluminescent characteristics of multi-color organic light-emitting diodes. By accurately controlling the position of the ultrathin sensing layer, it is considerably easy tomore » balance the white emission which is quite challenging for full-color devices with multiple emission zones. There is nearly no energy transfer detectable if 7 nm thick Ir(ppz){sub 3} is inserted between the blue phosphorescent emitter and the ultrathin red emitter.« less

Complete erasing of ghost images on computed radiography plates and role of deeply trapped electrons

NASA Astrophysics Data System (ADS)

Ohuchi-Yoshida, Hiroko; Kondo, Yasuhiro

2011-12-01

Computed radiography (CR) plates made of europium-doped Ba(Sr)FBr(I) were simultaneously exposed to filtered ultraviolet light and visible light in order to erase ghost images, i.e., latent image that is unerasable with visible light (LIunVL) and reappearing one, which are particularly observed in plates irradiated with a high dose and/or cumulatively over-irradiated. CR samples showing LIunVLs were prepared by irradiating three different types of CR plates (Agfa ADC MD10, Kodak Directview Mammo EHRM2, and Fuji ST-VI) with 50 kV X-ray beams in the dose range 8.1 mGy-8.0 Gy. After the sixth round of simultaneous 6 h exposures to filtered ultraviolet light and visible light, all the LIunVLs in the three types of CR plates were erased to the same level as in an unirradiated plate and no latent images reappeared after storage at 0 °C for 14 days. With conventional exposure to visible light, LIunVLs consistently remained in all types of CR plates irradiated with higher doses of X-rays and latent images reappeared in the Agfa M10 plates after storage at 0 °C. Electrons trapped in deep centers cause LIunVLs and they can be erased by simultaneous exposures to filtered ultraviolet light and visible light. To study electrons in deep centers, the absorption spectra were examined in all types of irradiated CR plates by using polychromatic ultraviolet light from a deep-ultraviolet lamp. It was found that deep centers showed a dominant peak in the absorption spectra at around 324 nm for the Agfa M10 and Kodak EHRM2 plates, and at around 320 nm for the Fuji ST-VI plate, in each case followed by a few small peaks. The peak heights were dose-dependent for all types of CR samples, suggesting that the number of electrons trapped in deep centers increases with the irradiation dose.

Polycrystalline CVD diamond device level modeling for particle detection applications

NASA Astrophysics Data System (ADS)

Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

2016-12-01

Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

NASA Astrophysics Data System (ADS)

Zhang, Z.; Farzana, E.; Sun, W. Y.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Kyle, E. C. H.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

2015-10-01

The impact of annealing of proton irradiation-induced defects in n-type GaN devices has been systematically investigated using deep level transient and optical spectroscopies. Moderate temperature annealing (>200-250 °C) causes significant reduction in the concentration of nearly all irradiation-induced traps. While the decreased concentration of previously identified N and Ga vacancy related levels at EC - 0.13 eV, 0.16 eV, and 2.50 eV generally followed a first-order reaction model with activation energies matching theoretical values for NI and VGa diffusion, irradiation-induced traps at EC - 0.72 eV, 1.25 eV, and 3.28 eV all decrease in concentration in a gradual manner, suggesting a more complex reduction mechanism. Slight increases in concentration are observed for the N-vacancy related levels at EC - 0.20 eV and 0.25 eV, which may be due to the reconfiguration of other N-vacancy related defects. Finally, the observed reduction in concentrations of the states at EC - 1.25 and EC - 3.28 eV as a function of annealing temperature closely tracks the detailed recovery behavior of the background carrier concentration as a function of annealing temperature. As a result, it is suggested that these two levels are likely to be responsible for the underlying carrier compensation effect that causes the observation of carrier removal in proton-irradiated n-GaN.

An approach for in situ studies of deep-sea amphipods and their microbial gut flora

NASA Astrophysics Data System (ADS)

Jannasch, H. W.; Cuhel, R. L.; Wirsen, C. O.; Taylor, C. D.

1980-10-01

A technique has been developed and field-tested for the trapping, feeding, and timed incubation of amphipods on the deep-sea floor. Data obtained from experiments using radiolabeled foodstuffs indicate that shifts within the labeled fractions of the major biological polymers make it possible to distinguish between the metabolism of the amphipods and that of their intestinal microflora.

Investigation on H-containing shallow trap of hydrogenated TiO2 with in situ Fourier transform infrared diffuse reflection spectroscopy.

PubMed

Han, Bing; Hang Hu, Yun

2017-07-28

A novel technique, high temperature high pressure in situ Fourier transform infrared diffuse reflection spectroscopy, was successfully used to investigate the formation and stability of shallow trap states in P25 TiO 2 nanoparticles. Two types of shallow traps (with and without H atoms) were identified. The H-containing shallow trap can be easily generated by heating in H 2 atmosphere. However, the trap is unstable in vacuum at 600 °C. In contrast, the H-free shallow trap, which can be formed by heating in vacuum, is stable even at 600 °C. The energy gaps between shallow trap states and the conduction band are 0.09 eV for H-containing shallow trap and 0.13 eV for H-free shallow trap, indicating that the H-containing shallow trap state is closer to the conduction band than that without H.

Pentacene Schottky diodes studied by impedance spectroscopy: Doping properties and trap response

NASA Astrophysics Data System (ADS)

Pahner, Paul; Kleemann, Hans; Burtone, Lorenzo; Tietze, Max L.; Fischer, Janine; Leo, Karl; Lüssem, Björn

2013-11-01

We study doping properties and charge carrier trap distributions in pentacene Schottky diodes doped by the fluorinated fullerene derivate C60F36 and 2,2'-(perdiylidene)dimalononitrile (F6-TCNNQ) upon small signal excitation. We show that the charge carrier depletion zones present in these Schottky diodes are tunable by the applied bias and temperature. Mott-Schottky evaluations yield reduced doping efficiencies and dopant activation energies between 19 and 54 meV. In the low-frequency regime, we resolve additional capacitive contributions from inherent charge carrier traps. A Gaussian distributed trap center 0.6 eV above the hole transport level with a density in the range of 1016 cm-3 depending on the material purity is found to be an intrinsic feature of the pentacene matrix. Upon doping, the deep Gaussian trap center saturates in density and broad exponentially tailing trap distributions arise. Subsequent ultraviolet photoelectron spectroscopy measurements are conducted to inspect for energetic broadening due to doping.

Experimental methods for the simulation of supercritical CO2 injection at laboratory scale aimed to investigate capillary trapping

NASA Astrophysics Data System (ADS)

Trevisan, L.; Illangasekare, T. H.; Rodriguez, D.; Sakaki, T.; Cihan, A.; Birkholzer, J. T.; Zhou, Q.

2011-12-01

Geological storage of carbon dioxide in deep geologic formations is being considered as a technical option to reduce greenhouse gas loading to the atmosphere. The processes associated with the movement and stable trapping are complex in deep naturally heterogeneous formations. Three primary mechanisms contribute to trapping; capillary entrapment due to immobilization of the supercritical fluid CO2 within soil pores, liquid CO2 dissolving in the formation water and mineralization. Natural heterogeneity in the formation is expected to affect all three mechanisms. A research project is in progress with the primary goal to improve our understanding of capillary and dissolution trapping during injection and post-injection process, focusing on formation heterogeneity. It is expected that this improved knowledge will help to develop site characterization methods targeting on obtaining the most critical parameters that capture the heterogeneity to design strategies and schemes to maximize trapping. This research combines experiments at the laboratory scale with multiphase modeling to upscale relevant trapping processes to the field scale. This paper presents the results from a set of experiments that were conducted in an intermediate scale test tanks. Intermediate scale testing provides an attractive alternative to investigate these processes under controlled conditions in the laboratory. Conducting these types of experiments is highly challenging as methods have to be developed to extrapolate the data from experiments that are conducted under ambient laboratory conditions to high temperatures and pressures settings in deep geologic formations. We explored the use of a combination of surrogate fluids that have similar density, viscosity contrasts and analogous solubility and interfacial tension as supercritical CO2-brine in deep formations. The extrapolation approach involves the use of dimensionless numbers such as Capillary number (Ca) and the Bond number (Bo). A set of experiments that captures some of the complexities of the geologic heterogeneity and injection scenarios are planned in a 4.8 m long tank. To test the experimental methods and instrumentation, a set of preliminary experiments were conducted in a smaller tank with dimensions 90 cm x 60 cm. The tank was packed to represent both homogeneous and heterogeneous conditions. Using the surrogate fluids, different injection scenarios were tested. Images of the migration plume showed the critical role that heterogeneity plays in stable entrapment. Destructive sampling done at the end of the experiments provided data on the final saturation distributions. Preliminary analysis suggests the entrapment configuration is controlled by the large-scale heterogeneities as well as the pore-scale entrapment mechanisms. The data was used in modeling analysis that is presented in a companion abstract.

Large dielectric constant, high acceptor density, and deep electron traps in perovskite solar cell material CsGeI 3

DOE PAGES

Ming, Wenmei; Shi, Hongliang; Du, Mao-Hua

2016-01-01

Here we report that many metal halides that contain cations with the ns 2 electronic configuration have recently been discovered as high-performance optoelectronic materials. In particular, solar cells based on lead halide perovskites have shown great promise as evidenced by the rapid increase of the power conversion efficiency. In this paper, we show density functional theory calculations of electronic structure and dielectric and defect properties of CsGeI 3 (a lead-free halide perovskite material). The potential of CsGeI 3 as a solar cell material is assessed based on its intrinsic properties. We find anomalously large Born effective charges and a largemore » static dielectric constant dominated by lattice polarization, which should reduce carrier scattering, trapping, and recombination by screening charged defects and impurities. Defect calculations show that CsGeI 3 is a p-type semiconductor and its hole density can be modified by varying the chemical potentials of the constituent elements. Despite the reduction of long-range Coulomb attraction by strong screening, the iodine vacancy in CsGeI3 is found to be a deep electron trap due to the short-range potential, i.e., strong Ge–Ge covalent bonding, which should limit electron transport efficiency in p-type CsGeI 3. This is in contrast to the shallow iodine vacancies found in several Pb and Sn halide perovskites (e.g., CH 3NH 3PbI 3, CH 3NH 3SnI 3, and CsSnI 3). The low-hole-density CsGeI 3 may be a useful solar absorber material but the presence of the low-energy deep iodine vacancy may significantly reduce the open circuit voltage of the solar cell. Still, on the other hand, CsGeI 3 may be used as an efficient hole transport material in solar cells due to its small hole effective mass, the absence of low-energy deep hole traps, and the favorable band offset with solar absorber materials such as dye molecules and CH 3NH 3PbI 3.« less

Antarctic warming driven by internal Southern Ocean deep convection oscillations

NASA Astrophysics Data System (ADS)

Martin, Torge; Pedro, Joel B.; Steig, Eric J.; Jochum, Markus; Park, Wonsun; Rasmussen, Sune O.

2016-04-01

Simulations with the free-running, complex coupled Kiel Climate Model (KCM) show that heat release associated with recurring Southern Ocean deep convection can drive centennial-scale Antarctic temperature variations of 0.5-2.0 °C. We propose a mechanism connecting the intrinsic ocean variability with Antarctic warming that involves the following three steps: Preconditioning: heat supplied by the lower branch of the Atlantic Meridional Overturning Circulation (AMOC) accumulates at depth in the Southern Ocean, trapped by the Weddell Gyre circulation; Convection onset: wind and/or sea-ice changes tip the preconditioned, thermally unstable system into the convective state; Antarctic warming: fast sea-ice-albedo feedbacks (on annual to decadal timescales) and slower Southern Ocean frontal and sea-surface temperature adjustments to the convective heat release (on multi-decadal to centennial timescales), drive an increase in atmospheric heat and moisture transport towards Antarctica resulting in warming over the continent. Further, we discuss the potential role of this mechanism to explain climate variability observed in Antarctic ice-core records.

Photostimulated luminescence properties of Eu2+ -doped barium aluminate phosphor.

PubMed

He, Quanlong; Qiu, Guangyu; Xu, Xuhui; Qiu, Jianbei; Yu, Xue

2015-03-01

An intense green photostimulated luminescence in BaAl2 O4 :Eu(2+) phosphor was prepared. The thermoluminescence results indicate that there are at least three types of traps (T1 , T2 , T3 ) with different trap depths in BaAl2 O4 :Eu(2+) phosphor according to the bands located at 327, 361 and 555 K, respectively, which are closely associated with the phosphor's long persistent luminescence and photostimulated luminescence properties. In addition, as a novel optical read-out form, a photostimulated persistent luminescence signal can be repeatedly obtained in BaAl2 O4 :Eu(2+) phosphor. This shows that re-trapping of the electron released from a deep trap plays an important role in photostimulated persistent luminescence. Copyright © 2014 John Wiley & Sons, Ltd.

Fundamental limit of nanophotonic light trapping in solar cells.

PubMed

Yu, Zongfu; Raman, Aaswath; Fan, Shanhui

2010-10-12

Establishing the fundamental limit of nanophotonic light-trapping schemes is of paramount importance and is becoming increasingly urgent for current solar cell research. The standard theory of light trapping demonstrated that absorption enhancement in a medium cannot exceed a factor of 4n(2)/sin(2)θ, where n is the refractive index of the active layer, and θ is the angle of the emission cone in the medium surrounding the cell. This theory, however, is not applicable in the nanophotonic regime. Here we develop a statistical temporal coupled-mode theory of light trapping based on a rigorous electromagnetic approach. Our theory reveals that the conventional limit can be substantially surpassed when optical modes exhibit deep-subwavelength-scale field confinement, opening new avenues for highly efficient next-generation solar cells.

Charge transfer fluorescence and 34 nm exciton diffusion length in polymers with electron acceptor end traps

DOE PAGES

Zaikowski, Lori; Mauro, Gina; Bird, Matthew; ...

2014-12-22

Photoexcitation of conjugated poly-2,7-(9,9-dihexylfluorene) polyfluorenes with naphthylimide (NI) and anthraquinone (AQ) electron-acceptor end traps produces excitons that form charge transfer states at the end traps. Intramolecular singlet exciton transport to end traps was examined by steady state fluorescence for polyfluorenes of 17 to 127 repeat units in chloroform, dimethylformamide (DMF), tetrahydrofuran (THF), and p-xylene. End traps capture excitons and form charge transfer (CT) states at all polymer lengths and in all solvents. The CT nature of the end-trapped states is confirmed by their fluorescence spectra, solvent and trap group dependence and DFT descriptions. Quantum yields of CT fluorescence are asmore » large as 46%. This strong CT emission is understood in terms of intensity borrowing. Energies of the CT states from onsets of the fluorescence spectra give the depths of the traps which vary with solvent polarity. For NI end traps the trap depths are 0.06 (p-xylene), 0.13 (THF) and 0.19 eV (CHCl 3). For AQ, CT fluorescence could be observed only in p-xylene where the trap depth is 0.27 eV. Quantum yields, emission energies, charge transfer energies, solvent reorganization and vibrational energies were calculated. Fluorescence measurements on chains >100 repeat units indicate that end traps capture ~50% of the excitons, and that the exciton diffusion length L D =34 nm, which is much larger than diffusion lengths reported in polymer films or than previously known for diffusion along isolated chains. As a result, the efficiency of exciton capture depends on chain length, but not on trap depth, solvent polarity or which trap group is present.« less

Quantum mechanics in rotating-radio-frequency traps and Penning traps with a quadrupole rotating field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abe, K.; Hasegawa, T.

2010-03-15

Quantum-mechanical analysis of ion motion in a rotating-radio-frequency (rrf) trap or in a Penning trap with a quadrupole rotating field is carried out. Rrf traps were introduced by Hasegawa and Bollinger [Phys. Rev. A 72, 043404 (2005)]. The classical motion of a single ion in this trap is described by only trigonometric functions, whereas in the conventional linear radio-frequency (rf) traps it is by the Mathieu functions. Because of the simple classical motion in the rrf trap, it is expected that the quantum-mechanical analysis of the rrf traps is also simple compared to that of the linear rf traps. Themore » analysis of Penning traps with a quadrupole rotating field is also possible in a way similar to the rrf traps. As a result, the Hamiltonian in these traps is the same as the two-dimensional harmonic oscillator, and energy levels and wave functions are derived as exact results. In these traps, it is found that one of the vibrational modes in the rotating frame can have negative energy levels, which means that the zero-quantum-number state (''ground'' state) is the highest energy state.« less

Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-12-01

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Imaging electronic trap states in perovskite thin films with combined fluorescence and femtosecond transient absorption microscopy

DOE PAGES

Xiao, Kai; Ma, Ying -Zhong; Simpson, Mary Jane; ...

2016-04-22

Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. Themore » remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Furthermore, detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps.« less

Dosimetric response for crystalline and nanostructured aluminium oxide to a high-current pulse electron beam.

PubMed

Nikiforov, S V; Kortov, V S

2014-11-01

The main thermoluminescent (TL) and dosimetric properties of the detectors based on anion-defective crystalline and nanostructured aluminium oxide after exposure to a high-current pulse electron beam are studied. TL peaks associated with deep-trapping centres are registered. It is shown that the use of deep-trap TL at 200-600°С allows registering absorbed doses up to 750 kGy for single-crystalline detectors and those up to 6 kGy for nanostructured ones. A wide range of the doses registered, high reproducibility of the TL signal and low fading contribute to a possibility of using single-crystalline and nanostructured aluminium oxide for the dosimetry of high-current pulse electron beams. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Estimating reef fish discard mortality using surface and bottom tagging: effects of hook injury and barotrauma

USGS Publications Warehouse

Rudershausen, Paul J.; Buckel, Jeffrey A.; Hightower, Joseph E.

2013-01-01

We estimated survival rates of discarded black sea bass (Centropristis striata) in various release conditions using tag–recapture data. Fish were captured with traps and hook and line from waters 29–34 m deep off coastal North Carolina, USA, marked with internal anchor tags, and observed for release condition. Fish tagged on the bottom using SCUBA served as a control group. Relative return rates for trap-caught fish released at the surface versus bottom provided an estimated survival rate of 0.87 (95% credible interval 0.67–1.18) for surface-released fish. Adjusted for results from the underwater tagging experiment, fish with evidence of external barotrauma had a median survival rate of 0.91 (0.69–1.26) compared with 0.36 (0.17–0.67) for fish with hook trauma and 0.16 (0.08–0.30) for floating or presumably dead fish. Applying these condition-specific estimates of survival to non-tagging fishery data, we estimated a discard survival rate of 0.81 (0.62–1.11) for 11 hook and line data sets from waters 20–35 m deep and 0.86 (0.67–1.17) for 10 trap data sets from waters 11–29 m deep. The tag-return approach using a control group with no fishery-associated trauma represents a method to accurately estimate absolute discard survival of physoclistous reef species.

Comparison of CO2 trapping in highly heterogeneous reservoirs with Brooks-Corey and van Genuchten capillary pressure curves

NASA Astrophysics Data System (ADS)

Gershenzon, Naum; Soltanian, Mohamadreza; Ritzi, Robert, Jr.; Dominic, David

2015-04-01

Geological heterogeneities essentially affect the dynamics of a CO2 plume in subsurface environments. Recent studies have led to new conceptual and quantitative models for sedimentary architecture in fluvial deposits over a range of scales that are relevant to the performance of some deep saline reservoirs [1, 2]. Previously we showed how the dynamics of a CO2 plume, during and after injection, is influenced by the hierarchical and multi-scale stratal architecture in such reservoirs [3]. The results strongly suggest that representing these small scales (few cm in vertical direction and few meters in horizontal direction) features and representing how they are organized within a hierarchy of larger-scale features, is critical to understanding capillary trapping processes. The results also demonstrated the importance of using separate capillary pressure and relative permeability relationships for different textural facies types. Here we present the result of simulation of CO2 trapping in deep saline aquifers using two different conventional approaches, i.e. Brooks-Corey and van Genuchten, to capillary pressure. We showed that capillary trapping as well as dissolution rates are very different for the Brooks-Corey and van Genuchten approaches if reservoir consists from various species with different capillary pressure and relative permeability curves. We also found a dramatic difference in simulation time; using the van Genuchten approach improves convergence and thus reduces calculation time by one-two orders of magnitude. [1] Bridge, J.S. (2006), Fluvial facies models: Recent developments, in Facies Models Revisited, SEPM Spec. Publ., 84, edited by H. W. Posamentier and R. G. Walker, pp. 85-170, Soc. for Sediment. Geol. (SEPM), Tulsa, Okla [2] Ramanathan, R., A. Guin, R.W. Ritzi, D.F. Dominic, V.L. Freedman, T.D. Scheibe, and I.A. Lunt (2010), Simulating the heterogeneity in channel belt deposits: Part 1. A geometric-based methodology and code, Water Resources Research, v. 46, W04515. [3] Gershenzon N.I., M. Soltanian, R.W. Ritzi Jr., and D.F. Dominic (2014) Influence of small scale heterogeneity on CO2 trapping processes in deep saline aquifers, Energy Procedia, 59, 166 - 173.

Glacial magnetite dissolution in abyssal NW Pacific sediments - evidence for carbon trapping?

NASA Astrophysics Data System (ADS)

Korff, Lucia; von Dobeneck, Tilo; Frederichs, Thomas; Kasten, Sabine; Kuhn, Gerhard; Gersonde, Rainer; Diekmann, Bernhard

2016-04-01

The abyssal North Pacific Ocean's large volume, depth, and terminal position on the deep oceanic conveyor make it a candidate site for deep carbon trapping as postulated by climate theory to explain the massive glacial drawdown of atmospheric CO2. As the major basins of the North Pacific have depths of 5500-6500m, far below the modern and glacial Calcite Compensation Depths (CCD), these abyssal sediments are carbonate-free and therefore not suitable for carbonate-based paleoceanographic proxy reconstructions. Instead, paleo-, rock and environmental magnetic methods are generally well applicable to hololytic abyssal muds and clays. In 2009, the international paleoceanographic research cruise SO 202 INOPEX ('Innovative North Pacific Experiment') of the German RV SONNE collected two ocean-spanning EW sediment core transects of the North Pacific and Bering Sea recovering a total of 50 piston and gravity cores from 45 sites. Out of seven here considered abyssal Northwest Pacific piston cores collected at water depths of 5100 to 5700m with mostly coherent shipboard susceptibility logs, the 20.23m long SO202-39-3, retrieved from 5102 m water depth east of northern Shatsky Rise (38°00.70'N, 164°26.78'E), was rated as the stratigraphically most promising record of the entire core transect and selected for detailed paleo- and environmental magnetic, geochemical and sedimentological investigations. This core was dated by correlating its RPI and Ba/Ti records to well-dated reference records and obviously provides a continuous sequence of the past 940 kyrs. The most striking orck magnetic features are coherent magnetite-depleted zones corresponding to glacial periods. In the interglacial sections, detrital, volcanic and even submicron bacterial magnetite fractions are excellently preserved. These alternating magnetite preservation states seem to reflect dramatic oxygenation changes in the deep North Pacific Ocean and hint at large-scale benthic glacial carbon trapping followed by subsequent interglacial carbon burn-down and CO2 release. Abyssal Northwest Pacific sediments may have served as glacial carbon reservoir in particular since the onset of systematic 100 kyr ice age cycles at the end of the Mid-Pleistocene transition (MPT). Stagnant glacial Antarctic Bottom Water, which expanded primarily into abyssal South Atlantic basins during the MPT interim phase, thereafter seemed to flow preferentially into the deeper and larger abyssal Indo-Pacific basins, where it may have enabled more efficient carbon-trapping. More intensive scavenging of the Northwest Pacific surface ocean by enhanced glacial Asian dust flux is suggested by parallel TOC and quartz contents, enhancing glacial carbon accumulation despite potentially lower export production. The magnetic records also identify numerous partly consistent tephra layers, which can be matched between most records of the core transect.

Suppression of space charge in crosslinked polyethylene filled with poly(stearyl methacrylate)-grafted SiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Zhang, Ling; Khani, Mohammad M.; Krentz, Timothy M.; Huang, Yanhui; Zhou, Yuanxiang; Benicewicz, Brian C.; Nelson, J. Keith; Schadler, Linda S.

2017-03-01

Incorporating inorganic nanoparticles (NPs) into polymer matrices provides a promising solution for suppressing space charge effects that can lead to premature failure of electrical insulation used in high voltage direct current engineering. However, realizing homogeneous NP dispersion is a great challenge especially in high-molecular-weight polymers. Here, we address this issue in crosslinked polyethylene by grafting matrix-compatible polymer brushes onto spherical colloidal SiO2 NPs (10-15 nm diameter) to obtain a uniform NP dispersion, thus achieving enhanced space charge suppression, improved DC breakdown strength, and restricted internal field distortion (≤10.6%) over a wide range of external DC fields from -30 kV/mm to -100 kV/mm at room temperature. The NP dispersion state is the key to ensuring an optimized distribution of deep trapping sites. A well-dispersed system provides sufficient charge trapping sites and shows better performance compared to ones with large aggregates. This surface ligand strategy is attractive for future nano-modification of many engineering insulating polymers.

A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

PubMed

Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

2015-09-01

We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

Characterization of nonequilibrium states of trapped Bose–Einstein condensates

NASA Astrophysics Data System (ADS)

Yukalov, V. I.; Novikov, A. N.; Bagnato, V. S.

2018-06-01

The generation of different nonequilibrium states in trapped Bose–Einstein condensates is studied by numerically solving the nonlinear Schrödinger equation. Inducing nonequilibrium states by shaking a trap creates the following states: weak nonequilibrium, the state of vortex germs, the state of vortex rings, the state of straight vortex lines, the state of deformed vortices, vortex turbulence, grain turbulence, and wave turbulence. A characterization of nonequilibrium states is advanced by introducing effective temperature, Fresnel number, and Mach number.

Tune-out wavelengths and landscape-modulated polarizabilities of alkali-metal Rydberg atoms in infrared optical lattices

NASA Astrophysics Data System (ADS)

Topcu, Turker; Derevianko, Andrei

2013-11-01

Intensity-modulated optical lattice potentials can change sign for an alkali-metal Rydberg atom, and the atoms are not always attracted to intensity minima in optical lattices with wavelengths near the CO2 laser band. Here we demonstrate that such IR lattices can be tuned so that the trapping potential experienced by the Rydberg atom can be made to vanish for atoms in “targeted” Rydberg states. Such state-selective trapping of Rydberg atoms can be useful in controlled cold Rydberg collisions, cooling Rydberg states, and species-selective trapping and transport of Rydberg atoms in optical lattices. We tabulate wavelengths at which the trapping potential vanishes for the ns, np, and nd Rydberg states of Na and Rb atoms and discuss advantages of using such optical lattices for state-selective trapping of Rydberg atoms. We also develop exact analytical expressions for the lattice-induced polarizability for the mz=0 Rydberg states and derive an accurate formula predicting tune-out wavelengths at which the optical trapping potential becomes invisible to Rydberg atoms in targeted l=0 states.

Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Guochang; Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn; School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ

Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loadingmore » concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.« less

Transport of sludge-derived organic pollutants to deep-sea sediments at deep water dump site 106

USGS Publications Warehouse

Takada, H.; Farrington, J.W.; Bothner, Michael H.; Johnson, C.G.; Tripp, B.W.

1994-01-01

Linear alkylbenzenes (LABs), coprostanol and epi-coprostanol, were detected in sediment trap and bottom sediment samples at the Deep Water Dump Site 106 located 185 km off the coast of New Jersey, in water depths from 2400 to 2900 m. These findings clearly indicate that organic pollutants derived from dumped sludge are transported through the water column and have accumulated on the deep-sea floor. No significant difference in LABs isomeric composition was observed among sludge and samples, indicating little environmental biodegradation of these compounds. LABs and coprostanol have penetrated down to a depth of 6 cm in sediment, indicating the mixing of these compounds by biological and physical processes. Also, in artificially resuspended surface sediments, high concentrations of LABs and coprostanols were detected, implying that sewage-derived organic pollutants initially deposited on the deep-sea floor can be further dispersed by resuspension and transport processes. Small but significant amounts of coprostanol were detected in the sediment from a control site at which no LABs were detected. The coprostanol is probably derived from feces of marine mammals and sea birds and/or from microbial or geochemical transformations of cholesterol. Polcyclic aromatic hydrocarbons (PAHs) in sediment trap samples from the dump site were largely from the sewage sludge and had a mixed petroleum and pyrogenic composition. In contrast, PAHs in sediments in the dump site were mainly pyrogenic; contributed either from sewage sludge or from atmospheric transport to the overlying waters. & 1994 American Chemical Society.

Real-Space Mapping of Surface Trap States in CIGSe Nanocrystals Using 4D Electron Microscopy.

PubMed

Bose, Riya; Bera, Ashok; Parida, Manas R; Adhikari, Aniruddha; Shaheen, Basamat S; Alarousu, Erkki; Sun, Jingya; Wu, Tom; Bakr, Osman M; Mohammed, Omar F

2016-07-13

Surface trap states in copper indium gallium selenide semiconductor nanocrystals (NCs), which serve as undesirable channels for nonradiative carrier recombination, remain a great challenge impeding the development of solar and optoelectronics devices based on these NCs. In order to design efficient passivation techniques to minimize these trap states, a precise knowledge about the charge carrier dynamics on the NCs surface is essential. However, selective mapping of surface traps requires capabilities beyond the reach of conventional laser spectroscopy and static electron microscopy; it can only be accessed by using a one-of-a-kind, second-generation four-dimensional scanning ultrafast electron microscope (4D S-UEM) with subpicosecond temporal and nanometer spatial resolutions. Here, we precisely map the collective surface charge carrier dynamics of copper indium gallium selenide NCs as a function of the surface trap states before and after surface passivation in real space and time using S-UEM. The time-resolved snapshots clearly demonstrate that the density of the trap states is significantly reduced after zinc sulfide (ZnS) shelling. Furthermore, the removal of trap states and elongation of carrier lifetime are confirmed by the increased photocurrent of the self-biased photodetector fabricated using the shelled NCs.

Cavity-enhanced optical bottle beam as a mechanical amplifier

NASA Astrophysics Data System (ADS)

Freegarde, Tim; Dholakia, Kishan

2002-07-01

We analyze the resonant cavity enhancement of a hollow ``optical bottle beam'' for the dipole-force trapping of dark-field-seeking species. We first improve upon the basic bottle beam by adding further Laguerre-Gaussian components to deepen the confining potential. Each of these components itself corresponds to a superposition of transverse cavity modes, which are then enhanced simultaneously in a confocal cavity to produce a deep optical trap needing only a modest incident power. The response of the trapping field to displacement of the cavity mirrors offers an unusual form of mechanical amplifier in which the Gouy phase shift produces an optical Vernier scale between the Laguerre-Gaussian beam components.

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

NASA Astrophysics Data System (ADS)

Ferrandis, Philippe; Billaud, Mathilde; Duvernay, Julien; Martin, Mickael; Arnoult, Alexandre; Grampeix, Helen; Cassé, Mikael; Boutry, Hervé; Baron, Thierry; Vinet, Maud; Reimbold, Gilles

2018-04-01

To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposition. In this work, we examined the influence of the III-V material surface cleaning and the semiconductor growth technique on the electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP(100) substrates. By means of the capacitance-voltage measurements, we demonstrated that samples do not have the same total oxide charge density depending on the cleaning solution used [(NH4)2S or NH4OH] prior to oxide deposition. The determination of the interface trap density revealed that a Fermi-level pinning occurs for samples grown by metalorganic chemical vapor deposition but not for similar samples grown by molecular beam epitaxy. Deep level transient spectroscopy analysis explained the Fermi-level pinning by an additional signal for samples grown by metalorganic chemical vapor deposition, attributed to the tunneling effect of carriers trapped in oxide toward interface states. This work emphasizes that the choice of appropriate oxide and cleaning treatment is not enough to prevent a Fermi-level pinning in III-V metal-oxide-semiconductor capacitors. The semiconductor growth technique needs to be taken into account because it impacts the trapping properties of the oxide.

Surface flashover performance of epoxy resin microcomposites improved by electron beam irradiation

NASA Astrophysics Data System (ADS)

Huang, Yin; Min, Daomin; Li, Shengtao; Li, Zhen; Xie, Dongri; Wang, Xuan; Lin, Shengjun

2017-06-01

The influencing mechanism of electron beam irradiation on surface flashover of epoxy resin/Al2O3 microcomposite was investigated. Epoxy resin/Al2O3 microcomposite samples with a diameter of 50 mm and a thickness of 1 mm were prepared. The samples were irradiated by electron beam with energies of 10 and 20 keV and a beam current of 5 μA for 5 min. Surface potential decay, surface conduction, and surface flashover properties of untreated and irradiated samples were measured. Both the decay rate of surface potential and surface conductivity decrease with an increase in the energy of electron beam. Meanwhile, surface flashover voltage increase. It was found that both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. The increase in the energy and density of deep surface traps enhance the ability to capture primary emitted electrons. In addition, the decrease in surface conductivity blocks electron emission at the cathode triple junction. Therefore, electron avalanche at the interface between gas and an insulating material would be suppressed, eventually improving surface flashover voltage of epoxy resin microcomposites.

Capturing self-propelled particles in a moving microwedge

NASA Astrophysics Data System (ADS)

Kaiser, A.; Popowa, K.; Wensink, H. H.; Löwen, H.

2013-08-01

Catching fish with a fishing net is typically done either by dragging a fishing net through quiescent water or by placing a stationary basket trap into a stream. We transfer these general concepts to micron-sized self-motile particles moving in a solvent at low Reynolds number and study their collective trapping behavior by means of computer simulations of a two-dimensional system of self-propelled rods. A chevron-shaped obstacle is dragged through the active suspension with a constant speed v and acts as a trapping “net.” Three trapping states can be identified corresponding to no trapping, partial trapping, and complete trapping and their relative stability is studied as a function of the apex angle of the wedge, the swimmer density, and the drag speed v. When the net is dragged along the inner wedge, complete trapping is facilitated and a partially trapped state changes into a complete trapping state if the drag speed exceeds a certain value. Reversing the drag direction leads to a reentrant transition from no trapping to complete trapping and then back to no trapping upon increasing the drag speed along the outer wedge contour. The transition to complete trapping is marked by a templated self-assembly of rods forming polar smectic structures anchored onto the inner contour of the wedge. Our predictions can be verified in experiments of artificial or microbial swimmers confined in microfluidic trapping devices.

Capturing self-propelled particles in a moving microwedge.

PubMed

Kaiser, A; Popowa, K; Wensink, H H; Löwen, H

2013-08-01

Catching fish with a fishing net is typically done either by dragging a fishing net through quiescent water or by placing a stationary basket trap into a stream. We transfer these general concepts to micron-sized self-motile particles moving in a solvent at low Reynolds number and study their collective trapping behavior by means of computer simulations of a two-dimensional system of self-propelled rods. A chevron-shaped obstacle is dragged through the active suspension with a constant speed v and acts as a trapping "net." Three trapping states can be identified corresponding to no trapping, partial trapping, and complete trapping and their relative stability is studied as a function of the apex angle of the wedge, the swimmer density, and the drag speed v. When the net is dragged along the inner wedge, complete trapping is facilitated and a partially trapped state changes into a complete trapping state if the drag speed exceeds a certain value. Reversing the drag direction leads to a reentrant transition from no trapping to complete trapping and then back to no trapping upon increasing the drag speed along the outer wedge contour. The transition to complete trapping is marked by a templated self-assembly of rods forming polar smectic structures anchored onto the inner contour of the wedge. Our predictions can be verified in experiments of artificial or microbial swimmers confined in microfluidic trapping devices.

Measurement of Deep Levels at InGaAs(P)/InP Heterojunctions

DTIC Science & Technology

1990-04-01

by write Eq. (10) to obtain (for shallow or deep donor traps): VD(O) = VDK + q/K f. N, (x*)(x* -x)dx* -qAx/ o, - + J N,(x)dx J-* +_N,, F(x)dx KFc . N...8217T, P. Andre, 1. N. Patillon, J. L. Gentler, E. P. Menu , D. Moroni, and G. Case 2: Bias sweep frequency large (e,, <Wf~ccw) M. Martin, Int. Symp. GaAs

Trapping of ultracold polar molecules with a thin-wire electrostatic trap.

PubMed

Kleinert, J; Haimberger, C; Zabawa, P J; Bigelow, N P

2007-10-05

We describe the realization of a dc electric-field trap for ultracold polar molecules, the thin-wire electrostatic trap (TWIST). The thin wires that form the electrodes of the TWIST allow us to superimpose the trap onto a magneto-optical trap (MOT). In our experiment, ultracold polar NaCs molecules in their electronic ground state are created in the MOT via photoassociation, achieving a continuous accumulation in the TWIST of molecules in low-field seeking states. Initial measurements show that the TWIST trap lifetime is limited only by the background pressure in the chamber.

String loops in the field of braneworld spherically symmetric black holes and naked singularities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stuchlík, Z.; Kološ, M., E-mail: zdenek.stuchlik@fpf.slu.cz, E-mail: martin.kolos@fpf.slu.cz

We study motion of current-carrying string loops in the field of braneworld spherically symmetric black holes and naked singularities. The spacetime is described by the Reissner-Nordström geometry with tidal charge b reflecting the non-local tidal effects coming from the external dimension; both positive and negative values of the spacetime parameter b are considered. We restrict attention to the axisymmetric motion of string loops when the motion can be fully governed by an appropriately defined effective potential related to the energy and angular momentum of the string loops. In dependence on these two constants of the motion, the string loops canmore » be captured, trapped, or can escape to infinity. In close vicinity of stable equilibrium points at the centre of trapped states the motion is regular. We describe how it is transformed to chaotic motion with growing energy of the string loop. In the field of naked singularities the trapped states located off the equatorial plane of the system exist and trajectories unable to cross the equatorial plane occur, contrary to the trajectories in the field of black holes where crossing the equatorial plane is always admitted. We concentrate our attention to the so called transmutation effect when the string loops are accelerated in the deep gravitational field near the black hole or naked singularity by transforming the oscillatory energy to the energy of the transitional motion. We demonstrate that the influence of the tidal charge can be substantial especially in the naked singularity spacetimes with b > 1 where the acceleration to ultrarelativistic velocities with Lorentz factor γ ∼ 100 can be reached, being more than one order higher in comparison with those obtained in the black hole spacetimes.« less

Femtosecond Study of Self-Trapped Vibrational Excitons in Crystalline Acetanilide

NASA Astrophysics Data System (ADS)

Edler, J.; Hamm, P.; Scott, A. C.

2002-02-01

Femtosecond IR spectroscopy of delocalized NH excitations of crystalline acetanilide confirms that self-trapping in hydrogen-bonded peptide units exists and does stabilize the excitation. Two phonons with frequencies of 48 and 76 cm -1 are identified as the major degrees of freedom that mediate self-trapping. After selective excitation of the free exciton, self-trapping occurs within a few 100 fs. Excitation of the self-trapped states disappears from the spectral window of this investigation on a 1 ps time scale, followed by a slow ground state recovery of the hot ground state within 18 ps.

Femtosecond study of self-trapped vibrational excitons in crystalline acetanilide.

PubMed

Edler, J; Hamm, P; Scott, A C

2002-02-11

Femtosecond IR spectroscopy of delocalized NH excitations of crystalline acetanilide confirms that self-trapping in hydrogen-bonded peptide units exists and does stabilize the excitation. Two phonons with frequencies of 48 and 76 cm (-1) are identified as the major degrees of freedom that mediate self-trapping. After selective excitation of the free exciton, self-trapping occurs within a few 100 fs. Excitation of the self-trapped states disappears from the spectral window of this investigation on a 1 ps time scale, followed by a slow ground state recovery of the hot ground state within 18 ps.

Effect of high-dose irradiation on the optically stimulated luminescence of Al2O3:C

NASA Technical Reports Server (NTRS)

Yukihara, E. G.; Whitley, V. H.; McKeever, S. W. S.; Akselrod, A. E.; Akselrod, M. S.

2004-01-01

This paper examines the effect of high-dose irradiation on the optically stimulated luminescence (OSL) of Al2O3:C, principally on the shape of the OSL decay curve and on the OSL sensitivity. The effect of the degree of deep trap filling on the OSL was also studied by monitoring the sensitivity changes after doses of beta irradiation and after step-annealing of samples previously irradiated with high doses. The OSL response to dose shows a linear-supralinear-saturation behavior, with a decrease in the response for doses higher than those required for saturation. This behavior correlates with the sensitivity changes observed in the samples annealed only to 773 K, which show sensitization for doses up to 20-50 Gy and desensitization for higher doses. Data from the step-annealing study leads to the suggestion that the sensitization is caused by the filling of deep electron traps, which become thermally unstable at 1100-1200 K, whereas the desensitization is caused by the filling of deep hole traps, which become thermally unstable at 800-875 K, along with a concomitant decrease in the concentration of recombination centers (F+ -centers). Changes in the shape of the OSL decay curves are also observed at high doses, the decay becoming faster as the dose increases. These changes in the OSL decay curves are discussed in terms of multiple overlapping components, each characterized by different photoionization cross-sections. However, using numerical solutions of the rate equations for a simple model consisting of a main trap and a recombination center, it is shown that the kinetics of OSL process may also be partially responsible for the changes in the OSL curves at high doses in Al2O3:C. Finally, the implication of these results for the dosimetry of heavy charged particles is discussed. c2004 Elsevier Ltd. All rights reserved.

Electrical characterisation of defects in wide bandgap semiconductors

NASA Astrophysics Data System (ADS)

Elsherif, Osama S.

Defects usually have a very large influence on the semiconductor material properties and hence on fabricated electronic devices. The nature and properties of defects in semiconducting materials can be investigated by applying electrical characterization techniques such as thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS measurements. This dissertation presents the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline diamond and GaN) which have both recently attracted a great deal of attention because of their potential applications in the fields of power electronics and optoelectronics. Raman spectroscopy, I-V and C-V measurements were carried out as supporting experiments for the above investigations. The first part of this work focuses on studying the effect of B concentration on the electronic states in polycrystalline diamond thin films grown on silicon by the hot filament chemical vapour deposition method. A combination of high-resolution LDLTS and direct-capture cross-section measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. A number of hole traps have been detected; the majority of these levels show an unusual dependence of the DLTS signal on the fill pulse duration which is interpreted as possibly the levels are part of extended defects within the grain boundaries. In contrast, a defect level found in a more highly doped film, with an activation energy of -0.37 eV, exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in the bulk diamond, away from the dislocations. The second part of this thesis presents electrical measurements carried out at temperatures up to 450 K in order to study the electronic states associated with Mg in Mg-doped GaN films grown on sapphire by metalorganic vapour phase epitaxy, and to determine how these are affected by the threading dislocation density (TDD). Two different buffer layer schemes between the film and the sapphire substrate were used, giving rise to different TDDs in the GaN. Admittance spectroscopy of the films finds a single impurity-related acceptor level. It is observed in theses experiments that admittance spectroscopy detects no traps that can be attributed to extended defects, despite the fact that the dislocations are well-known to be active recombination centres. This unexpected finding is discussed in detail.

Electrical characterisation of defects in wide bandgap semiconductors

NASA Astrophysics Data System (ADS)

Elsherif, Osama S.

Defects usually have a very large influence on the semiconductor material properties and hence on fabricated electronic devices. The nature and properties of defects in semiconducting materials can be investigated by applying electrical characterization techniques such as thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS measurements. This dissertation presents the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline diamond and GaN) which have both recently attracted a great deal of attention because of their potential applications in the fields of power electronics and optoelectronics. Raman spectroscopy, I-V and C-V measurements were carried out as supporting experiments for the above investigations.The first part of this work focuses on studying the effect of B concentration on the electronic states in polycrystalline diamond thin films grown on silicon by the hot filament chemical vapour deposition method. A combination of high-resolution LDLTS and direct-capture cross-section measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. A number of hole traps have been detected; the majority of these levels show an unusual dependence of the DLTS signal on the fill pulse duration which is interpreted as possibly the levels are part of extended defects within the grain boundaries. In contrast, a defect level found in a more highly doped film, with an activation energy of -0.37 eV, exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in the bulk diamond, away from the dislocations.The second part of this thesis presents electrical measurements carried out at temperatures up to 450 K in order to study the electronic states associated with Mg in Mg-doped GaN films grown on sapphire by metalorganic vapour phase epitaxy, and to determine how these are affected by the threading dislocation density (TDD). Two different buffer layer schemes between the film and the sapphire substrate were used, giving rise to different TDDs in the GaN. Admittance spectroscopy of the films finds a single impurity-related acceptor level. It is observed in theses experiments that admittance spectroscopy detects no traps that can be attributed to extended defects, despite the fact that the dislocations are well-known to be active recombination centres. This unexpected finding is discussed in detail.

Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials

NASA Astrophysics Data System (ADS)

Du, Mao-Hua; Biswas, Koushik; Singh, David J.

2012-10-01

In this paper, we report theoretical studies of native defects and dopants in a number of room-temperature semiconductor radiation detection materials, i.e., CdTe, TlBr, and Tl6SeI4. We address several important questions, such as what causes high resistivity in these materials, what explains good μτ product (carrier mobility-lifetime product) in soft-lattice ionic compounds that have high defect density, and how to obtain high resistivity and low carrier trapping simultaneously. Our main results are: (1) shallow donors rather than deep ones are responsible for high resistivity in high-quality detectorgrade CdTe; (2) large dielectric screening and the lack of deep levels from low-energy native defects may contribute to the good μτ products for both electrons and holes in TlBr; (3) the polarization phenomenon in Tl6SeI4 is expected to be much reduced compared to that in TlBr.

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.

PubMed

Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J

2015-05-13

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.

Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging

PubMed Central

Alberi, K.; Fluegel, B.; Moutinho, H.; Dhere, R. G.; Li, J. V.; Mascarenhas, A.

2013-01-01

Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet many measurement techniques are only capable of indirectly probing their effects. Here we apply a novel photoluminescence imaging technique to directly observe the low temperature diffusion of photocarriers through and across defect states in polycrystalline CdTe thin films. Our measurements show that an inhomogeneous distribution of localized defect states mediates long-range hole transport across multiple grain boundaries to locations exceeding 10 μm from the point of photogeneration. These results provide new insight into the key role deep trap states have in low temperature carrier transport in polycrystalline CdTe by revealing their propensity to act as networks for hopping conduction. PMID:24158163

Fluorescence characteristics in the deep waters of South Gulf of México.

PubMed

Schifter, I; Sánchez-Reyna, G; González-Macías, C; Salazar-Coria, L; González-Lozano, C

2017-10-15

Vertical profiles of deep-water fluorescence determined by the chlorophyll sensor, polycyclic aromatic hydrocarbons, biomarkers, and other miscellaneous parameters measured in the southern Gulf of Mexico are reported. In the course of the survey, unexpected deep fluorescences were recorded (>1100m depth) in half of the 40 stations studied, a novel finding in this area of the Gulf. Currently, the deep-water fluorescence phenomenon is not completely understood, however we observe linear correlation between the fluorescence intensity and chlorophyll-α concentrations and coincidence of higher number of hydrocarbonoclastic bacteria in samples collected precisely in the deep-water fluorescence. This information is particularly interesting in relation to the Deepwater Horizon oil spill in 2010, in view that the aftermaths of the spill can be observed till today as oil plumes trapped in deep water layers that may disturb the natural water ecosystem. Copyright © 2017 Elsevier Ltd. All rights reserved.

Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

NASA Astrophysics Data System (ADS)

Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

2007-12-01

In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

The effect of pre-dose on thermally and optically stimulated luminescence from α-Al2O3:C,Mg and α-Al2O3:C.

PubMed

Kalita, J M; Chithambo, M L

2018-06-15

We report the effect of pre-dose on the thermoluminescence (TL) and optically stimulated luminescence (OSL) dose response of α-Al 2 O 3 :C,Mg and α-Al 2 O 3 :C. Before any luminescence measurement, the samples were irradiated with different doses, namely 100, 500 and 1000 Gy to populate the deep electron traps. This is the pre-dose. The results from TL and OSL studies are compared with results from samples used without any pre-measurement dose. The TL glow curves and OSL decay curves of α-Al 2 O 3 :C,Mg recorded after pre-doses of 100, 500 and 1000 Gy are identical to those from a sample used without any pre-dose. Further, the TL and OSL dose response of all α-Al 2 O 3 :C,Mg samples are similar regardless of pre-dose. In comparison, the TL glow curves and OSL decay curves of α-Al 2 O 3 :C are influenced by pre-dose. We conclude that the differences in the TL and OSL dose response of various pre-dosed samples of α-Al 2 O 3 :C are due to the concentration of charge in the deep traps. On the other hand, owing to the lower concentration of such deep traps in α-Al 2 O 3 :C,Mg, the TL or OSL dose responses are not affected by pre-dose in this material. Copyright © 2018 Elsevier Ltd. All rights reserved.

Electron Correlation in Oxygen Vacancy in SrTiO3

NASA Astrophysics Data System (ADS)

Lin, Chungwei; Demkov, Alexander A.

2014-03-01

Oxygen vacancies are an important type of defect in transition metal oxides. In SrTiO3 they are believed to be the main donors in an otherwise intrinsic crystal. At the same time, a relatively deep gap state associated with the vacancy is widely reported. To explain this inconsistency we investigate the effect of electron correlation in an oxygen vacancy (OV) in SrTiO3. When taking correlation into account, we find that the OV-induced localized level can at most trap one electron, while the second electron occupies the conduction band. Our results offer a natural explanation of how the OV in SrTiO3 can produce a deep in-gap level (about 1 eV below the conduction band bottom) in photoemission, and at the same time be an electron donor. Our analysis implies an OV in SrTiO3 should be fundamentally regarded as a magnetic impurity, whose deep level is always partially occupied due to the strong Coulomb repulsion. An OV-based Anderson impurity model is derived, and its implications are discussed. This work was supported by Scientific Discovery through Advanced Computing (SciDAC) program funded by U.S. Department of Energy, Office of Science, Advanced Scientific Computing Research and Basic Energy Sciences under award number DESC0008877.

Squeezed coherent states of motion for ions confined in quadrupole and octupole ion traps

NASA Astrophysics Data System (ADS)

Mihalcea, Bogdan M.

2018-01-01

Quasiclassical dynamics of trapped ions is characterized by applying the time dependent variational principle (TDVP) on coherent state orbits, in case of quadrupole and octupole combined (Paul and Penning) or radiofrequency (RF) traps. A dequantization algorithm is proposed, by which the classical Hamilton (energy) function associated to the system results as the expectation value of the quantum Hamiltonian on squeezed coherent states. We develop such method and particularize the quantum Hamiltonian for both combined and RF nonlinear traps, that exhibit axial symmetry. We also build the classical Hamiltonian functions for the particular traps we considered, and find the classical equations of motion.

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Huang, X. D.; Lai, P. T.; Liu, L.; Xu, J. P.

2011-06-01

Charge-trapping characteristics of SrTiO3 with and without nitrogen incorporation were investigated based on Al/Al2O3/SrTiO3/SiO2/Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO3/SiO2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO3 as charge-trapping layer (CTL), the one with nitrided SrTiO3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 104 s), due to the nitrided SrTiO3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO2 by nitrogen passivation.

Cooling flexural modes of a mechanical oscillator by magnetically trapped Bose-Einstein-condensate atoms

NASA Astrophysics Data System (ADS)

Xu, Donghong; Xue, Fei

2017-12-01

We theoretically study cooling of flexural modes of a mechanical oscillator by Bose-Einstein-condensate (BEC) atoms (Rb87) trapped in a magnetic trap. The mechanical oscillator with a tiny magnet attached on one of its free ends produces an oscillating magnetic field. When its oscillating frequency matches certain hyperfine Zeeman energy of Rb87 atoms, the trapped BEC atoms are coupled out of the magnetic trap by the mechanical oscillator, flying away from the trap with stolen energy from the mechanical oscillator. Thus the mode temperature of the mechanical oscillator is reduced. The mode temperature of the steady state of mechanical oscillator, measured by the mean steady-state phonon number in the flexural mode of the mechanical oscillator, is analyzed. It is found that ground state (phonon number less than 1) may be accessible with optimal parameters of the hybrid system of mechanical oscillator and trapped BEC atoms.

Ferroelectric nanotraps for polar molecules

NASA Astrophysics Data System (ADS)

Dutta, Omjyoti; Giedke, G.

2018-02-01

We propose and analyze an electrostatic-optical nanoscale trap for cold diatomic polar molecules. The main ingredient of our proposal is a square array of ferroelectric nanorods with alternating polarization. We show that, in contrast to electrostatic traps using the linear Stark effect, a quadratic Stark potential supports long-lived trapped states. The molecules are kept at a fixed height from the nanorods by a standing-wave optical dipole trap. For the molecules and materials considered, we find nanotraps with trap frequency up to 1 MHz, ground-state width ˜20 nm with lattice periodicity of ˜200 nm . Analyzing the loss mechanisms due to nonadiabaticity, surface-induced radiative transitions, and laser-induced transitions, we show the existence of trapped states with lifetime ˜1 s , competitive with current traps created via optical mechanisms. As an application we extend our discussion to a one-dimensional (1D) array of nanotraps to simulate a long-range spin Hamiltonian in our structure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Kai; Ma, Ying -Zhong; Simpson, Mary Jane

Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. Themore » remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Furthermore, detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps.« less

43 CFR 2932.14 - Do I need a Special Recreation Permit to hunt, trap, or fish?

Code of Federal Regulations, 2011 CFR

2011-10-01

... hunt, trap, or fish? 2932.14 Section 2932.14 Public Lands: Interior Regulations Relating to Public... hunt, trap, or fish? (a) If you hold a valid State license, you do not need a Special Recreation Permit to hunt, trap, or fish. You must comply with State license requirements for these activities. BLM...

43 CFR 2932.14 - Do I need a Special Recreation Permit to hunt, trap, or fish?

Code of Federal Regulations, 2013 CFR

2013-10-01

... hunt, trap, or fish? 2932.14 Section 2932.14 Public Lands: Interior Regulations Relating to Public... hunt, trap, or fish? (a) If you hold a valid State license, you do not need a Special Recreation Permit to hunt, trap, or fish. You must comply with State license requirements for these activities. BLM...

43 CFR 2932.14 - Do I need a Special Recreation Permit to hunt, trap, or fish?

Code of Federal Regulations, 2014 CFR

2014-10-01

... hunt, trap, or fish? 2932.14 Section 2932.14 Public Lands: Interior Regulations Relating to Public... hunt, trap, or fish? (a) If you hold a valid State license, you do not need a Special Recreation Permit to hunt, trap, or fish. You must comply with State license requirements for these activities. BLM...

43 CFR 2932.14 - Do I need a Special Recreation Permit to hunt, trap, or fish?

Code of Federal Regulations, 2012 CFR

2012-10-01

... hunt, trap, or fish? 2932.14 Section 2932.14 Public Lands: Interior Regulations Relating to Public... hunt, trap, or fish? (a) If you hold a valid State license, you do not need a Special Recreation Permit to hunt, trap, or fish. You must comply with State license requirements for these activities. BLM...

Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements

NASA Astrophysics Data System (ADS)

Tsia, J. M.; Ling, C. C.; Beling, C. D.; Fung, S.

2002-09-01

A plus-or-minus100 V square wave applied to a Au/semi-insulating SI-GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2 (Ea=0.81plus-or-minus0.15 eV) and EL6 (Ea=0.30plus-or-minus0.12 eV) have been identified.

Populational fluctuation and spatial distribution of Alphitobius diaperinus (Panzer) (Coleoptera; Tenebrionidae) in a poultry house, Cascavel, Parana state, Brazil.

PubMed

Chernaki-Leffer, A M; Almeida, L M; Sosa-Gómez, D R; Anjos, A; Vogado, K M

2007-05-01

Knowledge of the population fluctuation and spatial distribution of pests is fundamental for establishing an appropriate control method. The population fluctuation and spatial distribution of the Alphitobius diaperinus in a poultry house in Cascavel, in the state of Parana, Brazil, was studied between October, 2001 and October 2002. Larvae and adults of the lesser mealworm were sampled weekly using Arends tube traps (n = 22) for six consecutive flock grow-outs. The temperature of the litter and of the poultry house was measured at the same locations of the tube traps. Beetle numbers increased continuously throughout all the sampling dates (average 5,137 in the first week and 18,494 insects on the sixth week). Significantly greater numbers of larvae were collected than adults (1 to 20 times in 95% of the sampling points). There was no correlation between temperature and the number of larvae and adults collected, therefore no fluctuation was observed during the sampling period. The population growth was correlated to litter re-use. The highest temperatures were observed in deep litter. The spatial distribution of larvae and adults in the poultry house was heterogeneous during the whole period of evaluation. Results suggest that monitoring in poultry houses is necessary prior to adopting and evaluating control measures due to the great variability of the insect distribution in the poultry house.

Excitation correlation photoluminescence in the presence of Shockley-Read-Hall recombination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borgwardt, M., E-mail: mario.borgwardt@helmholtz-berlin.de; Sippel, P.; Eichberger, R.

Excitation correlation photoluminescence (ECPL) measurements are often analyzed in the approximation of a cross correlation of charge carrier populations generated by the two delayed pulses. In semiconductors, this approach is valid for a linear non-radiative recombination path, but not for a non-linear recombination rate as in the general Shockley-Read-Hall recombination scenario. Here, the evolution of the ECPL signal was studied for deep trap recombination following Shockley-Read-Hall statistics. Analytic solutions can be obtained for a fast minority trapping regime and steady state recombination. For the steady state case, our results show that the quadratic radiative term plays only a minor role,more » and that the shape of the measured signal is mostly determined by the non-linearity of the recombination itself. We find that measurements with unbalanced intense pump and probe pulses can directly provide information about the dominant non-radiative recombination mechanism. The signal traces follow the charge carrier concentrations, despite the complex origins of the signal, thus showing that ECPL can be applied to study charge carrier dynamics in semiconductors without requiring elaborate calculations. The model is compared with measurements on a reference sample with alternating layers of InGaAs/InAlAs that were additionally cross-checked with time resolved optical pump terahertz probe measurements and found to be in excellent agreement.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kleinert, J.; Haimberger, C.; Zabawa, P. J.

We describe the realization of a dc electric-field trap for ultracold polar molecules, the thin-wire electrostatic trap (TWIST). The thin wires that form the electrodes of the TWIST allow us to superimpose the trap onto a magneto-optical trap (MOT). In our experiment, ultracold polar NaCs molecules in their electronic ground state are created in the MOT via photoassociation, achieving a continuous accumulation in the TWIST of molecules in low-field seeking states. Initial measurements show that the TWIST trap lifetime is limited only by the background pressure in the chamber.

Population trapping in the excited states using vacuum-induced coherence and adiabatic process

NASA Astrophysics Data System (ADS)

Lal Kumawat, Babu; Kumar, Pardeep; Dasgupta, Shubhrangshu

2018-02-01

We theoretically investigate how population can be trapped in the closely spaced excited levels in presence of vacuum-induced coherence (VIC). We employ delayed pulses to transfer population from a meta-stable state to the excited states. Subsequently, spontaneous emission from these excited states builds coherence between them. This coherence can be probed by using chirping, which leads to the decoupling of the excited states from the ground state thereby ensuring population transfer via delayed pulses. Our results indicate that the existence of VIC leads to the generation of a mixed state in the excited state manifold, where trapping of the population occurs even in the presence of large decay. This trapping may be realized in molecular systems and can be interpreted as a sensitive probe of VIC. We present suitable numerical analysis to support our results.

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

NASA Astrophysics Data System (ADS)

Peaker, A. R.; Markevich, V. P.; Coutinho, J.

2018-04-01

The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

Defect studies of nanocrystalline zirconia powders and sintered ceramics

NASA Astrophysics Data System (ADS)

Čížek, Jakub; Melikhova, Oksana; Procházka, Ivan; Kuriplach, Jan; Kužel, Radomír; Brauer, Gerhard; Anwand, Wolfgang; Konstantinova, Tatyana E.; Danilenko, Igor A.

2010-01-01

The main objective of the present paper is to communicate a study of defects behavior in zirconia-based nanomaterials—pressure-compacted yttria-stabilized zirconia (YSZ) nanopowders with different contents of Y2O3 and ceramics obtained by sintering the YZS nanopowders. In addition, YZS single crystals were also investigated. Positron annihilation techniques including positron lifetime and coincidence Doppler broadening with a conventional positron source and Doppler broadening experiments on a monoenergetic positron beam were involved in this study as the principal tools. These techniques were supplemented with transmission electron microscopy and x-ray diffraction observations. In order to get better support of the experimental data interpretation, the state-of-art theoretical calculations of positron parameters were performed for the perfect ZrO2 lattice and selected defect configurations in the YSZ. Theoretical calculations have indicated that neither the oxygen vacancies nor their neutral complexes with substitutional yttrium atoms are capable of positron trapping. On the other hand, the zirconium vacancies are deep positron traps and obviously are responsible for the saturated positron trapping observed in the YSZ single crystals. In the compacted YSZ nanopowders, a majority of positrons is trapped either in the vacancylike defects situated in the negative space-charge layers along grain boundaries (τ1≈185ps) or in vacancy clusters at intersections of grain boundaries (τ2≈370ps) . The intensity ratio I2/I1 was found to be correlated with the mean grain size d as I2/I1˜d-2 . A small fraction of positrons (≈10%) form positronium in large pores (τ3≈2ns,τ4≈30ns) . A significant grain growth during sintering of the YSZ nanopowders above 1000°C was observed.

Structural Defects in Donor-Acceptor Blends: Influence on the Performance of Organic Solar Cells

NASA Astrophysics Data System (ADS)

Sergeeva, Natalia; Ullbrich, Sascha; Hofacker, Andreas; Koerner, Christian; Leo, Karl

2018-02-01

Defects play an important role in the performance of organic solar cells. The investigation of trap states and their origin can provide ways to further improve their performance. Here, we investigate defects in a system composed of the small-molecule oligothiophene derivative DCV5T-Me blended with C60 , which shows power conversion efficiencies above 8% when used in a solar cell. From a reconstruction of the density of trap states by impedance spectroscopy, we obtain a Gaussian distribution of trap states with Et=470 meV below the electron transport level, Nt=8 ×1014 cm-3 , and σt=41 meV . From Voc vs illumination intensity and open-circuit corrected charge carrier extraction measurements, we find that these defects lead to trap-assisted recombination. Moreover, drift-diffusion simulations show that the trap states decrease the fill factor by 10%. By conducting degradation measurements and varying the blend ratio, we find that the observed trap states are structural defects in the C60 phase due to the distortion of the natural morphology induced by the mixing.

Vanadium substitution: A simple and economic way to improve UV sensing in ZnO

NASA Astrophysics Data System (ADS)

Srivastava, Tulika; Bajpai, Gaurav; Rathore, Gyanendra; Liu, Shun Wei; Biring, Sajal; Sen, Somaditya

2018-04-01

The UV sensing in pure ZnO is due to oxygen adsorption/desorption process from the ZnO surface. Vanadium doping improves the UV sensitivity of ZnO. The enhancement in UV sensitivity in vanadium-substituted ZnO is attributed to trapping and de-trapping of electrons at V4+ and V5+-related defect states. The V4+ state has an extra electron than the V5+ state. A V4+ to V5+ transformation happens with excitation of this electron to the conduction band, while a reverse trapping process liberates a visible light. An analytic study of response phenomenon reveals this trapping and de-trapping process.

Laser-induced rotation and cooling of a trapped microgyroscope in vacuum

PubMed Central

Arita, Yoshihiko; Mazilu, Michael; Dholakia, Kishan

2013-01-01

Quantum state preparation of mesoscopic objects is a powerful playground for the elucidation of many physical principles. The field of cavity optomechanics aims to create these states through laser cooling and by minimizing state decoherence. Here we demonstrate simultaneous optical trapping and rotation of a birefringent microparticle in vacuum using a circularly polarized trapping laser beam—a microgyroscope. We show stable rotation rates up to 5 MHz. Coupling between the rotational and translational degrees of freedom of the trapped microgyroscope leads to the observation of positional stabilization in effect cooling the particle to 40 K. We attribute this cooling to the interaction between the gyroscopic directional stabilization and the optical trapping field. PMID:23982323

Dissolution of methane bubbles with hydrate armoring in deep ocean conditions

NASA Astrophysics Data System (ADS)

Kovalchuk, Margarita; Socolofsky, Scott

2017-11-01

The deep ocean is a storehouse of natural gas. Methane bubble moving upwards from marine sediments may become trapped in gas hydrates. It is uncertain precisely how hydrate armoring affects dissolution, or mass transfer from the bubble to the surrounding water column. The Texas A&M Oilspill Calculator was used to simulate a series of gas bubble dissolution experiments conducted in the United States Department of Energy National Energy Technology Laboratory High Pressure Water Tunnel. Several variations of the mass transfer coefficient were calculated based on gas or hydrate phase solubility and clean or dirty bubble correlations. Results suggest the mass transfer coefficient may be most closely modeled with gas phase solubility and dirty bubble correlation equations. Further investigation of hydrate bubble dissolution behavior will refine current numeric models which aid in understanding gas flux to the atmosphere and plumes such as oil spills. Research funded in part by the Texas A&M University 2017 Undergraduate Summer Research Grant and a Grant from the Methane Gas Hydrates Program of the US DOE National Energy Technology Laboratory.

Cooling and heating of the quantum motion of trapped cadmium(+) ions

NASA Astrophysics Data System (ADS)

Deslauriers, Louis

The quest for a quantum system best satisfying the stringent requirements of a quantum information processor has made tremendous progress in many fields of physics. In the last decade, trapped ions have been established as one of the most promising architectures to accomplish the task. Internal states of an ion which can have extremely long coherence time can be used to store a quantum bit, and therefore allow many gate operations before the coherence is lost. Entanglement between multiple ions can be established via Coulomb interactions mediated by appropriate laser fields. Entangling schemes usually require the ions to be initialized to near their motional ground state. The interaction of fluctuating electric fields with the motional state of the ion leads to heating and thus to decoherence for entanglement generation limiting the fidelity of quantum logic gates. Effective ground state cooling of trapped ion motion and suppression of motional heating are thus crucial to many applications of trapped ions in quantum information science. In this thesis, I describe the implementation and study of several components of a Cadmium-ion-based quantum information processor, with special emphasis on the control and decoherence of trapped ion motion. I first discuss the building and design of various ion traps that were used in this work. I also report on the use of ultrafast laser pulses to photoionize and load cadmium ions in a variety of rf Paul trap geometries. A detailed analysis of the photoionization scheme is presented, along with its dependence on controlled experimental parameters. I then describe the implementation of Raman sideband cooling on a single trapped 111Cd+ ion to the ground state of motion, where a ground state population of 97% was achieved. The efficacy of this cooling technique is discussed with respect to different initial motional state distributions and its sensitivity to the presence of motional heating. I also present an experiment where the motion of a single trapped 112Cd+ ion is sympathetically cooled by directly Doppler cooling a 114Cd+ ion in the same trap. The implications of this result are relevant to the scaling of a trapped ion quantum computer, where the unwanted motion of an ion crystal can be quenched while not affecting the internal states of the qubit ions. (Abstract shortened by UMI.)

Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

NASA Astrophysics Data System (ADS)

Basile, A. F.; Cramer, T.; Kyndiah, A.; Biscarini, F.; Fraboni, B.

2014-06-01

Metal-oxide-semiconductor (MOS) transistors fabricated with pentacene thin films were characterized by temperature-dependent current-voltage (I-V) characteristics, time-dependent current measurements, and admittance spectroscopy. The channel mobility shows almost linear variation with temperature, suggesting that only shallow traps are present in the semiconductor and at the oxide/semiconductor interface. The admittance spectra feature a broad peak, which can be modeled as the sum of a continuous distribution of relaxation times. The activation energy of this peak is comparable to the polaron binding energy in pentacene. The absence of trap signals in the admittance spectra confirmed that both the semiconductor and the oxide/semiconductor interface have negligible density of deep traps, likely owing to the passivation of SiO2 before pentacene growth. Nevertheless, current instabilities were observed in time-dependent current measurements following the application of gate-voltage pulses. The corresponding activation energy matches the energy of a hole trap in SiO2. We show that hole trapping in the oxide can explain both the temperature and the time dependences of the current instabilities observed in pentacene MOS transistors. The combination of these experimental techniques allows us to derive a comprehensive model for charge transport in hybrid architectures where trapping processes occur at various time and length scales.

Accumulator for Low-Energy Laser-Cooled Particles

NASA Astrophysics Data System (ADS)

Mertes, Kevin; Walstrom, Peter; di Rosa, Michael; LANL Collaboration

2017-04-01

An accumulator builds phase-space density by use of a non-Hamiltonian process, thereby circumventing Liouville's theorem, which states that phase-space density is preserved in processes governed by Hamilton's equations. We have built an accumulator by a simple magneto-static cusp trap formed from two ring shaped permanent magnets. In traps with a central minimum of | B | , the stored particles are in a field-repelled (FR) Zeeman state, pushed away by | B | and oscillating about its minimum. After laser-cooling our particles and before entering the trap, we employ the non-hamiltonian process of optical pumping: A FR particle approaches the trap and climbs to the top of the confining potential with a finite velocity. There, it is switched to a field seeking (FS) state. As the switch does not change the velocity, the particle proceeds into the trap but continues to lose momentum because, now in the FS state, the particles sees the decreasing field as a potential hill to climb. Before it comes to a halt, the particle is switched back to a FR state for storage. The process repeats, building the trapped number and density. A simple consideration of potential and kinetic energies would show the trapped particles to have less kinetic energy than those injected. Los Alamos National Laboratory's Office of Laboratory Directed Research and Development.

Intensity-modulated polarizabilities and magic trapping of alkali-metal and divalent atoms in infrared optical lattices

NASA Astrophysics Data System (ADS)

Topcu, Turker; Derevianko, Andrei

2014-05-01

Long range interactions between neutral Rydberg atoms has emerged as a potential means for implementing quantum logical gates. These experiments utilize hyperfine manifold of ground state atoms to act as a qubit basis, while exploiting the Rydberg blockade mechanism to mediate conditional quantum logic. The necessity for overcoming several sources of decoherence makes magic wavelength trapping in optical lattices an indispensable tool for gate experiments. The common wisdom is that atoms in Rydberg states see trapping potentials that are essentially that of a free electron, and can only be trapped at laser intensity minima. We show that although the polarizability of a Rydberg state is always negative, the optical potential can be both attractive or repulsive at long wavelengths (up to ~104 nm). This opens up the possibility of magic trapping Rydberg states with ground state atoms in optical lattices, thereby eliminating the necessity to turn off trapping fields during gate operations. Because the wavelengths are near the CO2 laser band, the photon scattering and the ensuing motional heating is also reduced compared to conventional traps near low lying resonances, alleviating an important source of decoherence. This work was supported by the National Science Foundation (NSF) Grant No. PHY-1212482.

CO2 storage capacity estimates from fluid dynamics (Invited)

NASA Astrophysics Data System (ADS)

Juanes, R.; MacMinn, C. W.; Szulczewski, M.

2009-12-01

We study a sharp-interface mathematical model for the post-injection migration of a plume of CO2 in a deep saline aquifer under the influence of natural groundwater flow, aquifer slope, gravity override, and capillary trapping. The model leads to a nonlinear advection-diffusion equation, where the diffusive term describes the upward spreading of the CO2 against the caprock. We find that the advective terms dominate the flow dynamics even for moderate gravity override. We solve the model analytically in the hyperbolic limit, accounting rigorously for the injection period—using the true end-of-injection plume shape as an initial condition. We extend the model by incorporating the effect of CO2 dissolution into the brine, which—we find—is dominated by convective mixing. This mechanism enters the model as a nonlinear sink term. From a linear stability analysis, we propose a simple estimate of the convective dissolution flux. We then obtain semi-analytic estimates of the maximum plume migration distance and migration time for complete trapping. Our analytical model can be used to estimate the storage capacity (from capillary and dissolution trapping) at the geologic basin scale, and we apply the model to various target formations in the United States. Schematic of the migration of a CO2 plume at the geologic basin scale. During injection, the CO2 forms a plume that is subject to gravity override. At the end of the injection, all the CO2 is mobile. During the post-injection period, the CO2 migrates updip and also driven by regional groundwater flow. At the back end of the plume, where water displaces CO2, the plume leaves a wake or residual CO2 due to capillary trapping. At the bottom of the moving plume, CO2 dissolves into the brine—a process dominated by convective mixing. These two mechanisms—capillary trapping and convective dissolution—reduce the size of the mobile plume as it migrates. In this communication, we present an analytical model that predicts the migration distance and time for complete trapping. This is used to estimate storage capacity of geologic formations at the basin scale.

The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor

NASA Astrophysics Data System (ADS)

Tang, Guoqiang; Chen, Simon S. Y.; Lee, Kwan H.; Pivrikas, Almantas; Aljada, Muhsen; Burn, Paul L.; Meredith, Paul; Shaw, Paul E.

2013-06-01

We report the fabrication and charge transport characterization of carbazole dendrimer-based organic field-effect transistors (OFETs) for the sensing of explosive vapors. After exposure to para-nitrotoluene (pNT) vapor, the OFET channel carrier mobility decreases due to trapping induced by the absorbed pNT. The influence of trap states on transport in devices before and after exposure to pNT vapor has been determined using temperature-dependent measurements of the field-effect mobility. These data clearly show that the absorption of pNT vapor into the dendrimer active layer results in the formation of additional trap states. Such states inhibit charge transport by decreasing the density of conducting states.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido; Department of Electrical Engineering, KU Leuven, Leuven

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress ismore » highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.« less

Electronic Disorder in Organic Semiconducting Films Observed with Kelvin Probe Force Microscopy

NASA Astrophysics Data System (ADS)

Hoffman, Benjamin Carl

This work is a study into electronic disorder within organic semiconducting (OSC) films from a scan-probe perspective. Organic electronics are an exciting technology poised for use in next generation devices with unique applications such as transparent displays and ultrathin flexible solar cells. Understanding and mapping electronic disorder in OSC has a high degree of relevance towards recognizing the properties of charge trapping that hinders transport and diminishes device performance. Evidence of surface potential inhomogeneity is identified by using Kelvin probe force microscopy (KPFM) to measure the contact potential difference (CPD) between probe and sample. OSC films are grown via organic molecular beam deposition (OMBD) to create well-ordered crystals with precise control of nominal thickness. Further research methods involve the study of diffraction peaks from grazing-incidence wide-angle x-ray scattering (GIWAXS) for crystallographic analysis as well as use of a probe station for transfer characteristics of fabricated thin film transistors. Initial research into this subject involved thin films of the novel organic molecule 2,8- diflouro-5,11-bis(triethylsilylethynyl)-anthradithiophene (diF-TES-ADT) that were grown on silicon substrates with a native oxide layer and analyzed with GIWAXS and KPFM. The crystallography of the films is that of a uniform (001) orientation. Variations in surface potential in diF-TES-ADT crystallites are observed to be unique from variations in the substrate. Nevertheless, surface potential variations in thick films are influenced by chemical passivation of the substrate and so the source of CPD variations are assigned to be intrinsic defects. Chemical treatment and processing methods control the growth kinetics which are linked to charge traps locally distorting the surface potential in OSC films. To continue the research into identifying charge trapping in ultra-thin films, 1.5 monolayer thick films of alpha-sexithiophene (6T) were grown on silicon substrates with a thick oxide layer to compare the surface potential of the first monolayer with that of the bilayer. The temperature of the substrate during film growth was varied and found to influence the interlayer surface potential contrast. Higher temperature samples have a bilayer with CPD above that of the monolayer, while lower temperature samples have a bilayer with CPD below that of the monolayer. GIWAXS data collected shows that the lower temperature sample has no observed out-of-plane order which we identify as the source of interlayer trapping formed between the first and second monolayers of the 6T films. The final project into the specifics of disorder involves using ultrathin films of 6T in an operational transistor with grounded source-drain electrodes to study the influence of gate bias on surface potential. Using the mean and standard deviation of CPD for a series of gate biases, the trap density of states (DOS) is calculated directly while allowing for the quantification of spatial variations. CPD histograms from the series of images illustrate the screening of deep traps as the transistor is turned on. While in the 'off' regime the images are electrostatic, after transitioning to the 'on' state the images show instability after threshold voltage. This dynamic 'on' state offers a unique view of shallow trap states being filled and then thermally released.

Synthesis of ZnSe and ZnSe:Cu quantum dots by a room temperature photochemical (UV-assisted) approach using Na2 SeO3 as Se source and investigating optical properties.

PubMed

Khafajeh, R; Molaei, M; Karimipour, M

2017-06-01

In this study, ZnSe and ZnSe:Cu quantum dots (QDs) were synthesized using Na 2 SeO 3 as the Se source by a rapid and room temperature photochemical (UV-assisted) approach. Thioglycolic acid (TGA) was employed as the capping agent and UV illumination activated the chemical reactions. Synthesized QDs were successfully characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) and UV-visible (UV-vis) spectroscopy, Fourier transform-infrared (FT-IR), and energy dispersive X-ray spectroscopy (EDX). XRD analysis demonstrated the cubic zinc blend phase QDs. TEM images indicated that round-shaped particles were formed, most of which had a diameter of about 4 nm. The band gap of the ZnSe QDs was higher than that for ZnSe in bulk. PL spectra indicated an emission with three peaks related to the excitonic, surface trap states and deep level (DL) states. The band gap and QD emission were tunable only by UV illumination time during synthesis. ZnSe:Cu showed green emission due to transition of electrons from the Conduction band (CB) or surface trap states to the 2 T 2 acceptor levels of Cu 2 + . The emission was increased by increasing the Cu 2 + ion concentration, such that the optimal value of PL intensity was obtained for the nominal mole ratio of Cu:Zn 1.5%. Copyright © 2016 John Wiley & Sons, Ltd.

Assessment of undiscovered oil and gas resources in the Ventura Basin Province, California, 2016

USGS Publications Warehouse

Tennyson, Marilyn E.; Schenk, Christopher J.; Pitman, Janet K.; Lillis, Paul G.; Klett, Timothy R.; Brownfield, Michael E.; Finn, Thomas M.; Gaswirth, Stephanie B.; Hawkins, Sarah J.; Marra, Kristen R.; Mercier, Tracey J.; Le, Phuong A.; Leathers-Miller, Heidi M.

2017-10-02

The U.S. Geological Survey (USGS) completed a geology-based assessment of undiscovered, technically recoverable conventional and continuous oil and gas resources in the part of the Ventura Basin Province that lies onshore or within State waters (within 3 miles of the shoreline) of California (fig. 1). Conventional oil and gas resources are those that have migrated upward into structural or stratigraphic traps from deep zones where the oil and gas is generated; water is present below the oil or gas. Continuous accumulations, in contrast, are those in which oil or gas is pervasively present in essentially all wells that penetrate them, that may not be structurally or stratigraphically trapped, and that typically lack oil-water or gas-water contacts. They are commonly produced with well-stimulation technology, such as hydraulic fracturing, referred to as “unconventional.” The same stimulation technology, however, is also used in many conventionally trapped accumulations. We estimated both the likely range of oil and gas volumes remaining to be discovered in accumulations similar to existing conventional oil and gas fields in the Ventura Basin Province (previously assessed by Keller [1995] as 1,060 million barrels of oil [MMBO], 1,900 billion cubic feet of gas [BCFG], and 60 million barrels of natural gas liquids [MMBNGL]), and the potential for oil and gas that might be present in a continuous accumulation at extreme depth in the floor of the basin.

Improve California trap programs for detection of fruit flies

USDA-ARS?s Scientific Manuscript database

There are >160,000 federal and state fruit fly detection traps deployed in southern and western U.S. States and Puerto Rico. In California alone, >100,000 traps are deployed and maintained just for exotic fruit flies detection. Fruit fly detection and eradication requires deployment of large numbers...

X-ray Scintillation in Lead Halide Perovskite Crystals

PubMed Central

Birowosuto, M. D.; Cortecchia, D.; Drozdowski, W.; Brylew, K.; Lachmanski, W.; Bruno, A.; Soci, C.

2016-01-01

Current technologies for X-ray detection rely on scintillation from expensive inorganic crystals grown at high-temperature, which so far has hindered the development of large-area scintillator arrays. Thanks to the presence of heavy atoms, solution-grown hybrid lead halide perovskite single crystals exhibit short X-ray absorption length and excellent detection efficiency. Here we compare X-ray scintillator characteristics of three-dimensional (3D) MAPbI3 and MAPbBr3 and two-dimensional (2D) (EDBE)PbCl4 hybrid perovskite crystals. X-ray excited thermoluminescence measurements indicate the absence of deep traps and a very small density of shallow trap states, which lessens after-glow effects. All perovskite single crystals exhibit high X-ray excited luminescence yields of >120,000 photons/MeV at low temperature. Although thermal quenching is significant at room temperature, the large exciton binding energy of 2D (EDBE)PbCl4 significantly reduces thermal effects compared to 3D perovskites, and moderate light yield of 9,000 photons/MeV can be achieved even at room temperature. This highlights the potential of 2D metal halide perovskites for large-area and low-cost scintillator devices for medical, security and scientific applications. PMID:27849019

The Deep Space Atomic Clock Mission

NASA Technical Reports Server (NTRS)

Ely, Todd A.; Koch, Timothy; Kuang, Da; Lee, Karen; Murphy, David; Prestage, John; Tjoelker, Robert; Seubert, Jill

2012-01-01

The Deep Space Atomic Clock (DSAC) mission will demonstrate the space flight performance of a small, low-mass, high-stability mercury-ion atomic clock with long term stability and accuracy on par with that of the Deep Space Network. The timing stability introduced by DSAC allows for a 1-Way radiometric tracking paradigm for deep space navigation, with benefits including increased tracking via utilization of the DSN's Multiple Spacecraft Per Aperture (MSPA) capability and full ground station-spacecraft view periods, more accurate radio occultation signals, decreased single-frequency measurement noise, and the possibility for fully autonomous on-board navigation. Specific examples of navigation and radio science benefits to deep space missions are highlighted through simulations of Mars orbiter and Europa flyby missions. Additionally, this paper provides an overview of the mercury-ion trap technology behind DSAC, details of and options for the upcoming 2015/2016 space demonstration, and expected on-orbit clock performance.

The contribution of zooplankton faecal pellets to deep-carbon transport in the Scotia Sea (Southern Ocean)

NASA Astrophysics Data System (ADS)

Manno, C.; Stowasser, G.; Enderlein, P.; Fielding, S.; Tarling, G. A.

2015-03-01

The northern Scotia Sea contains the largest seasonal uptake of atmospheric carbon dioxide yet measured in the Southern Ocean. This study examines one of the main routes by which this carbon fluxes to the deep ocean: through the production of faecal pellets (FPs) by the zooplankton community. Deep sediment traps were deployed at two sites with contrasting ocean productivity regimes (P3, naturally iron-fertilized, and P2, iron-limited) within the same water mass. The magnitude and seasonal pattern of particulate organic carbon (POC) and FPs in the traps was markedly different between the two sites. Maximum fluxes at P3 (22.91 mg C m-2 d-1; 2534 FP m-2 d1) were 1 order of magnitude higher than at P2 (4.01 mg C m-2 d-1; 915 FP m-2 d1, with flux at P3 exhibiting a double seasonal peak, compared to a single flatter peak at P2. The maximum contribution of FP carbon to the total amount of POC was twice as high at P3 (91%) compared to P2 (40%). The dominant FP category at P3 varied between round, ovoidal, cylindrical and tabular over the course of the year, while, at P2, ovoidal FPs were consistently dominant, always making up more than 60% of the FP assemblage. There was also a difference in the FP state between the two sites, with FPs being relatively intact at P3, while FPs were often fragmented with broken peritrophic membranes at P2. The exception was ovoidal FPs, which were relatively intact at both sites. Our observations suggest that there was a community shift from a herbivorous to an omnivorous diet from spring through to autumn at P3, while detritivores had a higher relative importance over the year at P2. Furthermore, the flux was mainly a product of the vertically migrating zooplankton community at P3, while the FP flux was more likely to be generated by deeper-dwelling zooplankton feeding on recycled material at P2. The results demonstrate that the feeding behaviour and vertical distribution of the zooplankton community plays a critical role in controlling the magnitude of carbon export to the deep ocean in this region.

The contribution of zooplankton faecal pellets to deep carbon transport in the Scotia Sea (Southern Ocean)

NASA Astrophysics Data System (ADS)

Manno, C.; Stowasser, G.; Enderlein, P.; Fielding, S.; Tarling, G. A.

2014-11-01

The northern Scotia Sea contains the largest seasonal uptake of atmospheric carbon dioxide yet measured in the Southern Ocean. This study examines one of the main routes by which this carbon fluxes to the deep ocean, through the production of faecal pellets (FPs) by the zooplankton community. Deep sediment traps were deployed in two sites with contrasting ocean productivity regimes (P3, naturally iron-fertilized and P2, iron-limited), within the same water mass. The magnitude and seasonal pattern of particulate organic carbon (POC) and FPs in the traps was markedly different between the two sites. Maximum fluxes at P3 (22.91 mg C m-2 d-1; 2534 × 10 FP m-2 d-1) were an order of magnitude higher than at P2 (4.01 mg C m-2 d-1; 915 × 10 FP m-2 d-1), with flux at P3 exhibiting a double seasonal peak, compared to a single flatter peak at P2. The maximum contribution of FP carbon to the total amount of POC was twice as high at P3 (91%) compared to P2 (40%). The dominant FP category at P3 varied between round, ovoidal, cylindrical and tabular over the course of the year while, at P2, ovoidal FPs were consistently dominant, always making up more than 60% of the FP assemblage. There was also a difference in the FP state between the two sites, with FPs being relatively intact at P3, while FPs were often fragmented with broken peritrophic membranes at P2. The exception was ovoidal FPs, which were relatively intact at both sites. Our observations suggest that there was community shift from an herbivorous to an omnivorous diet from spring through to autumn at P3 while detritivores had a higher relative importance over the year at P2. Furthermore, the flux was mainly a product of the vertically migrating zooplankton community at P3 while the FP flux was more likely to be generated by deeper-dwelling zooplankton feeding on recycled material at P2. The results demonstrate that the feeding behavior and vertical distribution of the zooplankton community plays a critical role in controlling the magnitude of carbon export to the deep ocean in this region.

Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp; Optoelectronics and Radiation Effects Branch, U.S. Naval Research Laboratory, Washington, DC 20375; Schmieder, Kenneth J.

2016-05-14

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiatedmore » with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.« less

State-dependent fluorescence of neutral atoms in optical potentials

NASA Astrophysics Data System (ADS)

Martinez-Dorantes, M.; Alt, W.; Gallego, J.; Ghosh, S.; Ratschbacher, L.; Meschede, D.

2018-02-01

Recently we have demonstrated scalable, nondestructive, and high-fidelity detection of the internal state of 87Rb neutral atoms in optical dipole traps using state-dependent fluorescence imaging [M. Martinez-Dorantes, W. Alt, J. Gallego, S. Ghosh, L. Ratschbacher, Y. Völzke, and D. Meschede, Phys. Rev. Lett. 119, 180503 (2017), 10.1103/PhysRevLett.119.180503]. In this paper we provide experimental procedures and interpretations to overcome the detrimental effects of heating-induced trap losses and state leakage. We present models for the dynamics of optically trapped atoms during state-dependent fluorescence imaging and verify our results by comparing Monte Carlo simulations with experimental data. Our systematic study of dipole force fluctuations heating in optical traps during near-resonant illumination shows that off-resonant light is preferable for state detection in tightly confining optical potentials.

Efficient repumping of a Ca magneto-optical trap

NASA Astrophysics Data System (ADS)

Mills, Michael; Puri, Prateek; Yu, Yanmei; Derevianko, Andrei; Schneider, Christian; Hudson, Eric R.

2017-09-01

We investigate the limiting factors in the standard implementation of the Ca magneto-optical trap. We find that intercombination transitions from the 4 s 5 p 1P1 state used to repump the electronic population from the 3 d 4 s 1D2 state severely reduce the trap lifetime. We explore seven alternative repumping schemes theoretically and investigate five of them experimentally. We find that all five of these schemes yield a significant increase in the trap lifetime and consequently improve the number of atoms and peak atom density by as much as ˜20 times and ˜6 times, respectively. One of these transitions, at 453 nm, is shown to approach the fundamental limit for a Ca magneto-optical trap with repumping only from the dark 3 d 4 s 1D2 state, yielding a trap lifetime of ˜5 s.

Coherent all-optical control of ultracold atoms arrays in permanent magnetic traps.

PubMed

Abdelrahman, Ahmed; Mukai, Tetsuya; Häffner, Hartmut; Byrnes, Tim

2014-02-10

We propose a hybrid architecture for quantum information processing based on magnetically trapped ultracold atoms coupled via optical fields. The ultracold atoms, which can be either Bose-Einstein condensates or ensembles, are trapped in permanent magnetic traps and are placed in microcavities, connected by silica based waveguides on an atom chip structure. At each trapping center, the ultracold atoms form spin coherent states, serving as a quantum memory. An all-optical scheme is used to initialize, measure and perform a universal set of quantum gates on the single and two spin-coherent states where entanglement can be generated addressably between spatially separated trapped ultracold atoms. This allows for universal quantum operations on the spin coherent state quantum memories. We give detailed derivations of the composite cavity system mediated by a silica waveguide as well as the control scheme. Estimates for the necessary experimental conditions for a working hybrid device are given.

Detecting trap states in planar PbS colloidal quantum dot solar cells

PubMed Central

Jin, Zhiwen; Wang, Aiji; Zhou, Qing; Wang, Yinshu; Wang, Jizheng

2016-01-01

The recently developed planar architecture (ITO/ZnO/PbS-TBAI/PbS-EDT/Au) has greatly improved the power conversion efficiency of colloidal quantum dot photovoltaics (QDPVs). However, the performance is still far below the theoretical expectations and trap states in the PbS-TBAI film are believed to be the major origin, characterization and understanding of the traps are highly demanded to develop strategies for continued performance improvement. Here employing impedance spectroscopy we detect trap states in the planar PbS QDPVs. We determined a trap state of about 0.34 eV below the conduction band with a density of around 3.2 × 1016 cm−3 eV−1. Temperature dependent open-circuit voltage analysis, temperature dependent diode property analysis and temperature dependent build-in potential analysis consistently denotes an below-bandgap activation energy of about 1.17–1.20 eV. PMID:27845392

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-07-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO2 interface.

Nanophotonic light-trapping theory for solar cells

NASA Astrophysics Data System (ADS)

Yu, Zongfu; Raman, Aaswath; Fan, Shanhui

2011-11-01

Conventional light-trapping theory, based on a ray-optics approach, was developed for standard thick photovoltaic cells. The classical theory established an upper limit for possible absorption enhancement in this context and provided a design strategy for reaching this limit. This theory has become the foundation for light management in bulk silicon PV cells, and has had enormous influence on the optical design of solar cells in general. This theory, however, is not applicable in the nanophotonic regime. Here we develop a statistical temporal coupled-mode theory of light trapping based on a rigorous electromagnetic approach. Our theory reveals that the standard limit can be substantially surpassed when optical modes in the active layer are confined to deep-subwavelength scale, opening new avenues for highly efficient next-generation solar cells.

State Law Approaches to Facility Regulation of Abortion and Other Office Interventions

PubMed Central

Daniel, Sara; Cloud, Lindsay K.

2018-01-01

Objectives. To compare the prevalence and characteristics of facility laws governing abortion provision specifically (targeted regulation of abortion providers [TRAP] laws); office-based surgeries, procedures, sedation or anesthesia (office interventions) generally (OBS laws); and other procedures specifically. Methods. We conducted cross-sectional legal assessments of state facility laws for office interventions in effect as of August 1, 2016. We coded characteristics for each law and compared characteristics across categories of laws. Results. TRAP laws (n = 55; in 34 states) were more prevalent than OBS laws (n = 25; in 25 states) or laws targeting other procedures (n = 1; in 1 state). TRAP laws often regulated facilities that would not be regulated under OBS laws (e.g., all TRAP laws, but only 2 OBS laws, applied regardless of sedation or anesthesia used). TRAP laws imposed more numerous and more stringent requirements than OBS laws. Conclusions. Many states regulate abortion-providing facilities differently, and more stringently, than facilities providing other office interventions. The Supreme Court’s 2016 decision in Whole Woman’s Health v Hellerstedt casts doubt on the legitimacy of that differential treatment. PMID:29470114

TOPICAL REVIEW: The shallow-to-deep instability of hydrogen and muonium in II VI and III V semiconductors

NASA Astrophysics Data System (ADS)

Cox, S. F. J.

2003-11-01

The structure and electrical activity of monatomic hydrogen defect centres are inferred from the spectroscopy and charge-state transitions of muonium, the light pseudo-isotope of hydrogen. Introductions are given to all these topics. Special attention is paid to the shallow-donor behaviour recently established in a number of II VI compounds and one III nitride. This contrasts with trapped-atom states suggestive of an acceptor function in other members of the II VI family as well as with the deep-level amphoteric behaviour which has long been known in the elemental group-IV semiconductors and certain III V compounds. The systematics of this remarkable shallow-to-deep instability are examined in terms of simple chemical considerations, as well as current theoretical and computational models. The muonium data appear to confirm predictions that the switch from shallow to deep behaviour is governed primarily by the depth of the conduction-band minimum below the vacuum continuum. The threshold electron affinity is around 3.5 eV, which compares favourably with computational estimates of a so-called pinning level for hydrogen (+/-) charge-state transitions of between -3 and -4.5 eV. A purely ionic model gives some intuitive understanding of this behaviour as well as the invariance of the threshold. Another current description applies equally to covalent materials and relates the threshold to the origin of the electrochemical scale. At the present level of approximation, zero-point energy corrections to the transition levels are small, so that muonium data should provide a reliable guide to the behaviour of hydrogen. Muonium spectroscopy proves to be more sensitive to the (0/+) donor level than to the (+/-) pinning level but, as a tool which does not rely on favourable hydrogen solubility, it looks set to test further predictions of these models in a large number of other materials, notably oxides. Certain candidate thin-film insulators and high-permittivity gate dielectrics appear to be uncomfortably close to conditions in which hydrogen impurity may cause electronic conduction.

Measurements, modeling, and simulation of semiconductor/gate dielectric defects using random telegraph signals

NASA Astrophysics Data System (ADS)

Nour, Mohamed

Constructing an effective statistical model and a simulation tool that can predict the phenomenon of random telegraph signals (RTS) is the objective of this work. The continuous scaling down of metal oxide -- semiconductor field effect transistors (MOSFETs) makes charging/discharging traps(s) located at the silicon/silicon dioxide interface or deep in the oxide bulk by mobile charge(s) a more pronounced problem for both analog and digital applications. The intent of this work is to develop an RTS statistical model and a simulation tool based on first principles and supported by extensive experimental data. The newly developed RTS statistical model and its simulation tool should be able to replicate and predict the RTS in time and frequency domains. First, room temperature RTS measurements are performed which provide limited information about the trap. They yield the extraction of some trap and RTS characteristics such as average capture and emission times associated with RTS traces, trap position in the oxide with respect to the Si/SiO 2 interface and along the channel with respect to the source, capture cross section, and trap energies in the Si and SiO2 band -- gaps. Variable temperature measurements, on the other hand, yield much more valuable information. Variable temperature RTS measurements from room temperature down to 80 K were performed, with the MOSFET biased from threshold voltage to strong inversion, in the linear and saturation regions. Variable temperature RTS measurements yield the extraction of trap characteristics such as capture cross -- section prefactor, capture and emission activation energies, change in entropy and enthalpy, and relaxation energy associated with a trap from which the nature and origin of a defect center can be identified. The newly developed Random Telegraph Signals Simulation (RTSSIM) is based on several physical principles and mechanisms e.g. (1) capturing and emitting a mobile charge from and to the channel is governed by phonon- assisted- tunneling, (2) traps only within a few kBT of the Fermi energy level are considered electrically active, (3) trap density is taken as U -- shaped in energy in the silicon band-gap, (4) device scalability is accounted for, (5) and temperature dependence of all parameters is considered. RTSSIM reconstructs the RTS traces in time domain from which the power spectral density (PSD) is evaluated. If there is 20 or more active traps, RTSSIM evaluates the PSD from the superposition of the RTS spectra. RTSSIM extracts RTS and trap characteristics from the simulated RTS data and outputs them to MS Excel files for further analyses and study. The novelty of this work is: (1) it is the first time quantum trap states have been accurately assigned to each switching level in a complex RTS corresponding to dependently and independently interacting traps, (2) new physics-based measurement-driven model and simulation tool has been developed for RTS phenomenon in a MOSFET, (3) and it is the first time a species in SiO2 responsible for RTS has been identified through time-domain measurements and extensive analysis using four trap characteristics at the same time.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

2016-04-01

The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Hydrostatic Adjustment in Vertically Stratified Atmospheres

NASA Technical Reports Server (NTRS)

Duffy, Dean G.

2000-01-01

Hydrostatic adjustment due to diabatic heat in two nonisothermal atmospheres is examined. In the first case the temperature stratification is continuous; in the second case the atmosphere is composed of a warm, isothermal troposphere and a colder, isothermal semi-infinitely deep stratosphere.In both cases hydrostatic adjustment, to a good approximation, follows the pattern found in the Lamb problem (semi-infinitely deep. isothermal atmosphere): Initially we have acoustic waves with the kinetic energy increasing or decreasing at the expense of available elastic energy. After this initial period the acoustic waves evolve into acoustic-gravity waves with the kinetic, available potential and available elastic energies interacting with each other. Relaxation to hydrostatic balance occurs within a few oscillations. Stratification in an atmosphere with a continuous temperature profile affects primarily the shape and amplitude of the disturbances. In the two-layer atmosphere, a certain amount of energy is trapped in the tropospheric waveguide as disturbances reflect off the tropopause and back into the troposphere. With each internal reflection a portion of this trapped energy escapes and radiates to infinity.

Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors.

PubMed

Chen, Mikai; Wang, Yifan; Shepherd, Nathan; Huard, Chad; Zhou, Jiantao; Guo, L J; Lu, Wei; Liang, Xiaogan

2017-01-24

To construct reliable nanoelectronic devices based on emerging 2D layered semiconductors, we need to understand the charge-trapping processes in such devices. Additionally, the identified charge-trapping schemes in such layered materials could be further exploited to make multibit (or highly desirable analog-tunable) memory devices. Here, we present a study on the abnormal charge-trapping or memory characteristics of few-layer WSe 2 transistors. This work shows that multiple charge-trapping states with large extrema spacing, long retention time, and analog tunability can be excited in the transistors made from mechanically exfoliated few-layer WSe 2 flakes, whereas they cannot be generated in widely studied few-layer MoS 2 transistors. Such charge-trapping characteristics of WSe 2 transistors are attributed to the exfoliation-induced interlayer deformation on the cleaved surfaces of few-layer WSe 2 flakes, which can spontaneously form ambipolar charge-trapping sites. Our additional results from surface characterization, charge-retention characterization at different temperatures, and density functional theory computation strongly support this explanation. Furthermore, our research also demonstrates that the charge-trapping states excited in multiple transistors can be calibrated into consistent multibit data storage levels. This work advances the understanding of the charge memory mechanisms in layered semiconductors, and the observed charge-trapping states could be further studied for enabling ultralow-cost multibit analog memory devices.

Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques

DOE PAGES

Garris, Rebekah L.; Johnston, Steven; Li, Jian V.; ...

2017-08-31

In a previous study, we reported on Cu(In,Ga)Se2-based (CIGS) solar cell samples collected from different research laboratories and industrial companies with the purpose of understanding the range of CIGS materials that can lead to high-quality and high-efficiency solar panels. Here, we report on electrical measurements of those same samples. Electron-beam induced current and time-resolved photoluminescence (TRPL) gave insights about the collection probability and the lifetime of carriers generated in each absorber. Capacitance and drive-level capacitance profiling revealed nonuniformity in carrier-density profiles. Admittance spectroscopy revealed small activation energies (= 0.03 eV) indicative of the inversion strength, larger activation energies (> 0.1more » eV) reflective of thermal activation of absorber conductivity and a deeper defect level. Deep-level transient spectroscopy (DLTS) probed deep hole-trapping defects and showed that all samples in this study had a majority-carrier defect with activation energy between 0.3 eV and 0.9 eV. Optical-DLTS revealed deep electron-trapping defects in several of the CIGS samples. This work focused on revealing similarities and differences between high-quality CIGS solar cells made with various structures and fabrication techniques.« less

Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garris, Rebekah L.; Johnston, Steven; Li, Jian V.

In a previous study, we reported on Cu(In,Ga)Se2-based (CIGS) solar cell samples collected from different research laboratories and industrial companies with the purpose of understanding the range of CIGS materials that can lead to high-quality and high-efficiency solar panels. Here, we report on electrical measurements of those same samples. Electron-beam induced current and time-resolved photoluminescence (TRPL) gave insights about the collection probability and the lifetime of carriers generated in each absorber. Capacitance and drive-level capacitance profiling revealed nonuniformity in carrier-density profiles. Admittance spectroscopy revealed small activation energies (= 0.03 eV) indicative of the inversion strength, larger activation energies (> 0.1more » eV) reflective of thermal activation of absorber conductivity and a deeper defect level. Deep-level transient spectroscopy (DLTS) probed deep hole-trapping defects and showed that all samples in this study had a majority-carrier defect with activation energy between 0.3 eV and 0.9 eV. Optical-DLTS revealed deep electron-trapping defects in several of the CIGS samples. This work focused on revealing similarities and differences between high-quality CIGS solar cells made with various structures and fabrication techniques.« less

Inspiratory and expiratory high-resolution computed tomography (HRCT) in patients with chemical warfare agents exposure.

PubMed

Bakhtavar, Khadijeh; Sedighi, Nahid; Moradi, Zahra

2008-03-01

Chemical warfare agents (CWA) including sulfur mustard (SM) were commonly used in Iran-Iraq war. Respiratory problems are the greatest cause of long-term disability among people who had combat exposure to SM. High-resolution computed tomography (HRCT) has been accepted as the imaging modality of choice in these patients. We used expiratory HRCT findings in comparison to inspiratory HRCT for demonstration of pulmonary damage in these patients. HRCT in deep inspiration as well as full expiration was performed in 473 patients with a history of chemical gas exposure during the war and the results were compared. The study was prospective during 1 yr. Of 473 patients, 366 (77.38%) showed normal HRCT in deep inspiration; however, on corresponding expiratory cuts, 263 (71.86%) had abnormalities. The most frequent abnormal finding in expiration was patchy air trapping (77.77%). We conclude that exposure to SM causes pulmonary complications resulting in disability in the affected patients; however, HRCT in inspiration is normal in most of the affected patients. Expiratory HRCT showed patchy air trapping as the most common finding, which is suggestive of small air way diseases such as bronchiolitis obliterans; therefore it is recommended to do HRCT both in deep inspiration and full expiration in patients with a history of CWA exposure.

Magnetic Trapping and Coherent Control of Laser-Cooled Molecules

NASA Astrophysics Data System (ADS)

Williams, H. J.; Caldwell, L.; Fitch, N. J.; Truppe, S.; Rodewald, J.; Hinds, E. A.; Sauer, B. E.; Tarbutt, M. R.

2018-04-01

We demonstrate coherent microwave control of the rotational, hyperfine, and Zeeman states of ultracold CaF molecules, and the magnetic trapping of these molecules in a single, selectable quantum state. We trap about 5 ×103 molecules for almost 2 s at a temperature of 70 (8 ) μ K and a density of 1.2 ×105 cm-3. We measure the state-specific loss rate due to collisions with background helium.

Persistent and energetic bottom-trapped topographic Rossby waves observed in the southern South China Sea.

PubMed

Shu, Yeqiang; Xue, Huijie; Wang, Dongxiao; Chai, Fei; Xie, Qiang; Cai, Shuqun; Chen, Rongyu; Chen, Ju; Li, Jian; He, Yunkai

2016-04-14

Energetic fluctuations with periods of 9-14 days below a depth of 1400 m were observed in the southern South China Sea (SCS) from 5 years of direct measurements. We interpreted such fluctuations as topographic Rossby waves (TRWs) because they obey the dispersion relation. The TRWs persisted from May 24, 2009 to August 23, 2013, and their bottom current speed with a maximum of ~10 cm/s was one order of magnitude greater than the mean current and comparable to the tidal currents near the bottom. The bottom-trapped TRWs had an approximate trapping depth of 325 m and reference wavelength of ~82 km, which were likely excited by eddies above. Upper layer current speed that peaked approximately every 2 months could offer the energy sources for the persistent TRWs in the southern SCS. Energetic bottom-trapped TRWs may have a comparable role in deep circulation to tides in areas with complex topography.

Persistent and energetic bottom-trapped topographic Rossby waves observed in the southern South China Sea

PubMed Central

Shu, Yeqiang; Xue, Huijie; Wang, Dongxiao; Chai, Fei; Xie, Qiang; Cai, Shuqun; Chen, Rongyu; Chen, Ju; Li, Jian; He, Yunkai

2016-01-01

Energetic fluctuations with periods of 9–14 days below a depth of 1400 m were observed in the southern South China Sea (SCS) from 5 years of direct measurements. We interpreted such fluctuations as topographic Rossby waves (TRWs) because they obey the dispersion relation. The TRWs persisted from May 24, 2009 to August 23, 2013, and their bottom current speed with a maximum of ~10 cm/s was one order of magnitude greater than the mean current and comparable to the tidal currents near the bottom. The bottom-trapped TRWs had an approximate trapping depth of 325 m and reference wavelength of ~82 km, which were likely excited by eddies above. Upper layer current speed that peaked approximately every 2 months could offer the energy sources for the persistent TRWs in the southern SCS. Energetic bottom-trapped TRWs may have a comparable role in deep circulation to tides in areas with complex topography. PMID:27075644

The GOL-NB program: further steps in multiple-mirror confinement research

NASA Astrophysics Data System (ADS)

Postupaev, V. V.; Batkin, V. I.; Beklemishev, A. D.; Burdakov, A. V.; Burmasov, V. S.; Chernoshtanov, I. S.; Gorbovsky, A. I.; Ivanov, I. A.; Kuklin, K. N.; Mekler, K. I.; Rovenskikh, A. F.; Sidorov, E. N.; Yurov, D. V.

2017-03-01

Physical and technical details of the GOL-NB project are presented. GOL-NB is a medium-scale multiple-mirror trap that is under development in the Budker Institute, Novosibirsk, Russia. This device will be created in several years as a deep conversion of the existing GOL-3 facility. It will consist of a central trap with two 0.75 MW neutral beams, two multiple-mirror solenoids, two expander tanks and a plasma gun that creates the start plasma. The central trap with the neutral beam injection-heated plasma is a compact gas-dynamic system. The multiple-mirror sections should decrease the power and particle losses along the magnetic field. The confinement improvement factor depends on plasma parameters and on the magnetic configuration in the multiple mirrors. The main physical task of GOL-NB is direct demonstration of the performance of multiple-mirror sections that will change equilibrium plasma parameters in the central trap. In this paper we discuss results of the scenario modeling and progress in the hardware.

Trapping of a microsphere pendulum resonator in an optical potential

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, J. M.; Photonics Centre, Tyndall National Institute, Prospect Row, Cork; Wu, Y.

We propose a method to spatially confine or corral the movements of a micropendulum via the optical forces produced by two simultaneously excited optical modes of a photonic molecule comprising two microspherical cavities. We discuss how the cavity-enhanced optical force generated in the photonic molecule can create an optomechanical potential of about 10 eV deep and 30 pm wide, which can be used to trap the pendulum at any given equilibrium position by a simple choice of laser frequencies. This result presents opportunities for very precise all-optical self-alignment of microsystems.

The X-ARAPUCA: an improvement of the ARAPUCA device

NASA Astrophysics Data System (ADS)

Machado, A. A.; Segreto, E.; Warner, D.; Fauth, A.; Gelli, B.; Máximo, R.; Pissolatti, A.; Paulucci, L.; Marinho, F.

2018-04-01

The ARAPUCA is a novel technology for the detection of liquid argon scintillation light, which has been proposed for the far detector of the Deep Underground Neutrino Experiment. The X-ARAPUCA is an improvement to the original ARAPUCA design, retaining the original ARAPUCA concept of photon trapping inside a highly reflective box while using a wavelength shifting slab inside the box to increase the probability of collecting trapped photons onto a silicon photomultiplier array. The X-ARAPUCA concept is presented and its performances are compared to those of a standard ARAPUCA by means of analytical calculations and Monte Carlo simulations.

Stimulated Scattering and Phase Conjugation in Photorefractive Materials

DTIC Science & Technology

1992-01-31

than the grating in the deep traps. Bal’iO3 . 2 -15 Recently Brost et al. explained the intensity We predict that if the shallow traps can accumulate a...BSO and BaTiO 3 and induced transparency for Sr < so. Brost et al." ob- for I < 101 V/cm,. served that optical absorption of their BaTiO3 sample at A...flop crystal). Brost et al.’ showed 0 < 71 -< 1. In addition the Debye screening wave vector, that ko increased by -50%,’c between I = 2 x 10 - 3 W/cm

Competing reaction processes on a lattice as a paradigm for catalyst deactivation

NASA Astrophysics Data System (ADS)

Abad, E.; Kozak, J. J.

2015-02-01

We mobilize both a generating function approach and the theory of finite Markov processes to compute the probability of irreversible absorption of a randomly diffusing species on a lattice with competing reaction centers. We consider an N-site lattice populated by a single deep trap, and N -1 partially absorbing traps (absorption probability 0