Nano-imprint lithography using poly (methyl methacrylate) (PMMA) and polystyrene (PS) polymers

NASA Astrophysics Data System (ADS)

Ting, Yung-Chiang; Shy, Shyi-Long

2016-04-01

Nano-imprinting lithography (NIL) technology, as one of the most promising fabrication technologies, has been demonstrated to be a powerful tool for large-area replication up to wafer-level, with features down to nanometer scale. The cost of resists used for NIL is important for wafer-level large-area replication. This study aims to develop capabilities in patterning larger area structure using thermal NIL. The commercial available Poly (Methyl Methacrylate) (PMMA) and Polystyrene (PS) polymers possess a variety of characteristics desirable for NIL, such as low material cost, low bulkvolumetric shrinkage, high spin coating thickness uniformity, high process stability, and acceptable dry-etch resistance. PMMA materials have been utilized for positive electron beam lithography for many years, offering high resolution capability and wide process latitude. In addition, it is preferable to have a negative resist like PMMA, which is a simple polymer with low cost and practically unlimited shelf life, and can be dissolved easily using commercial available Propylene glycol methyl ether acetate (PGMEA) safer solvent to give the preferred film thickness. PS is such a resist, as it undergoes crosslinking when exposed to deep UV light or an electron beam and can be used for NIL. The result is a cost effective patterning larger area structure using thermal nano-imprint lithography (NIL) by using commercial available PMMA and PS ploymers as NIL resists.

Rapid fabrication of microfluidic chips based on the simplest LED lithography

NASA Astrophysics Data System (ADS)

Li, Yue; Wu, Ping; Luo, Zhaofeng; Ren, Yuxuan; Liao, Meixiang; Feng, Lili; Li, Yuting; He, Liqun

2015-05-01

Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. These heavy machines require a critical room environment and high lamp power, and the cost remains too high for most normal laboratories. Here we present a novel microfluidics fabrication method utilizing a portable ultraviolet (UV) LED as an alternative UV source for photolithography. With this approach, we can repeat several common microchannels as do these conventional commercial exposure machines, and both the verticality of the channel sidewall and lithography resolution are proved to be acceptable. Further microfluidics applications such as mixing, blood typing and microdroplet generation are implemented to validate the practicability of the chips. This simple but innovative method decreases the cost and requirement of chip fabrication dramatically and may be more popular with ordinary laboratories.

Flow lithography in ultraviolet-curable polydimethylsiloxane microfluidic chips

PubMed Central

Kim, Junbeom; An, Heseong; Seo, Yoojin; Jung, Youngmee; Lee, Jong Suk; Bong, Ki Wan

2017-01-01

Flow Lithography (FL) is the technique used for the synthesis of hydrogel microparticles with various complex shapes and distinct chemical compositions by combining microfluidics with photolithography. Although polydimethylsiloxane (PDMS) has been used most widely as almost the sole material for FL, PDMS microfluidic chips have limitations: (1) undesired shrinkage due to the thermal expansion of masters used for replica molding and (2) interfacial delamination between two thermally cured PDMS layers. Here, we propose the utilization of ultraviolet (UV)-curable PDMS (X-34-4184) for FL as an excellent alternative material of the conventional PDMS. Our proposed utilization of the UV-curable PDMS offers three key advantages, observed in our study: (1) UV-curable PDMS exhibited almost the same oxygen permeability as the conventional PDMS. (2) The almost complete absence of shrinkage facilitated the fabrication of more precise reverse duplication of microstructures. (3) UV-cured PDMS microfluidic chips were capable of much stronger interfacial bonding so that the burst pressure increased to ∼0.9 MPa. Owing to these benefits, we demonstrated a substantial improvement of productivity in synthesizing polyethylene glycol diacrylate microparticles via stop flow lithography, by applying a flow time (40 ms) an order of magnitude shorter. Our results suggest that UV-cured PDMS chips can be used as a general platform for various types of flow lithography and also be employed readily in other applications where very precise replication of structures on micro- or sub-micrometer scales and/or strong interfacial bonding are desirable. PMID:28469763

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

NASA Astrophysics Data System (ADS)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-06-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

NASA Astrophysics Data System (ADS)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-04-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

300 mm arrays and 30 nm Features: Frontiers in Sorting Biological Objects

NASA Astrophysics Data System (ADS)

Austin, Robert; Comella, Brandon; D'Silva, Joseph; Sturm, James

2014-03-01

One of the great challenges in prediction of metastasis is determining when the metastatic process actually begins. It is presumed that this process occurs due to passage of biological objects in the blood from tumor to remote sites. We will discuss our attempts to find both very large objects (circulating tumor cell clumps) and very small (exosomes) using a combination of extremely large scale photolithography on 300 mm wafers and deep-UV lithography to produce sub-100 nm arrays to sort exosomes. These technologies push the envelope of present day academic facilities . Supported by the National Science Foundation and the National Cancer Institute.

Computational study on UV curing characteristics in nanoimprint lithography: Stochastic simulation

NASA Astrophysics Data System (ADS)

Koyama, Masanori; Shirai, Masamitsu; Kawata, Hiroaki; Hirai, Yoshihiko; Yasuda, Masaaki

2017-06-01

A computational simulation model of UV curing in nanoimprint lithography based on a simplified stochastic approach is proposed. The activated unit reacts with a randomly selected monomer within a critical reaction radius. Cluster units are chained to each other. Then, another monomer is activated and the next chain reaction occurs. This process is repeated until a virgin monomer disappears within the reaction radius or until the activated monomers react with each other. The simulation model well describes the basic UV curing characteristics, such as the molecular weight distributions of the reacted monomers and the effect of the initiator concentration on the conversion ratio. The effects of film thickness on UV curing characteristics are also studied by the simulation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taguchi, Atsushi; Saito, Yuika; Watanabe, Koichi

Localized surface plasmon resonances were controlled at deep-ultraviolet (DUV) wavelengths by fabricating aluminum (Al) nanostructures in a size-controllable manner. Plasmon resonances were obtained at wavelengths from near-UV down to 270 nm (4.6 eV) depending on the fabricated structure size. Such precise size control was realized by the nanosphere lithography technique combined with additional microwave heating to shrink the spaces in a close-packed monolayer of colloidal nanosphere masks. By adjusting the microwave heating time, the sizes of the Al nanostructures could be controlled from 80 nm to 50 nm without the need to use nanosphere beads of different sizes. With themore » outstanding controllability and versatility of the presented fabrication technique, the fabricated Al nanostructure is promising for use as a DUV plasmonic substrate, a light-harvesting platform for mediating strong light-matter interactions between UV photons and molecules placed near the metal nanostructure.« less

George E. Pake Prize: A Few Challenges in the Evolution of Semiconductor Device/Manufacturing Technology

NASA Astrophysics Data System (ADS)

Doering, Robert

In the early 1980s, the semiconductor industry faced the related challenges of ``scaling through the one-micron barrier'' and converting single-level-metal NMOS integrated circuits to multi-level-metal CMOS. Multiple advances in lithography technology and device materials/process integration led the way toward the deep-sub-micron transistors and interconnects that characterize today's electronic chips. In the 1990s, CMOS scaling advanced at an accelerated pace enabled by rapid advances in many aspects of optical lithography. However, the industry also needed to continue the progress in manufacturing on ever-larger silicon wafers to maintain economy-of-scale trends. Simultaneously, the increasing complexity and absolute-precision requirements of manufacturing compounded the necessity for new processes, tools, and control methodologies. This talk presents a personal perspective on some of the approaches that addressed the aforementioned challenges. In particular, early work on integrating silicides, lightly-doped-drain FETs, shallow recessed isolation, and double-level metal will be discussed. In addition, some pioneering efforts in deep-UV lithography and single-wafer processing will be covered. The latter will be mainly based on results from the MMST Program - a 100 M +, 5-year R&D effort, funded by DARPA, the U.S. Air Force, and Texas Instruments, that developed a wide range of new technologies for advanced semiconductor manufacturing. The major highlight of the program was the demonstration of sub-3-day cycle time for manufacturing 350-nm CMOS integrated circuits in 1993. This was principally enabled by the development of: (1) 100% single-wafer processing, including rapid-thermal processing (RTP), and (2) computer-integrated-manufacturing (CIM), including real-time, in-situ process control.

Trends in imprint lithography for biological applications.

PubMed

Truskett, Van N; Watts, Michael P C

2006-07-01

Imprint lithography is emerging as an alternative nano-patterning technology to traditional photolithography that permits the fabrication of 2D and 3D structures with <100 nm resolution, patterning and modification of functional materials other than photoresist and is low cost, with operational ease for use in developing bio-devices. Techniques for imprint lithography, categorized as either 'molding and embossing' or 'transfer printing', will be discussed in the context of microarrays for genomics, proteomics and tissue engineering. Specifically, fabrication by nanoimprint lithography (NIL), UV-NIL, step and flash imprint lithography (S-FIL), micromolding by elastomeric stamps and micro- and nano-contact printing will be reviewed.

National Synchrotron Light Source annual report 1991

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hulbert, S.L.; Lazarz, N.M.

1992-04-01

This report discusses the following research conducted at NSLS: atomic and molecular science; energy dispersive diffraction; lithography, microscopy and tomography; nuclear physics; UV photoemission and surface science; x-ray absorption spectroscopy; x-ray scattering and crystallography; x-ray topography; workshop on surface structure; workshop on electronic and chemical phenomena at surfaces; workshop on imaging; UV FEL machine reviews; VUV machine operations; VUV beamline operations; VUV storage ring parameters; x-ray machine operations; x-ray beamline operations; x-ray storage ring parameters; superconducting x-ray lithography source; SXLS storage ring parameters; the accelerator test facility; proposed UV-FEL user facility at the NSLS; global orbit feedback systems; and NSLSmore » computer system.« less

Condenser for extreme-UV lithography with discharge source

DOEpatents

Sweatt, William C.; Kubiak, Glenn D.

2001-01-01

Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

Simultaneous fabrication of a microcavity absorber-emitter on a Ni-W alloy film

NASA Astrophysics Data System (ADS)

Nashun; Kagimoto, Masahiro; Iwami, Kentaro; Umeda, Norihiro

2017-10-01

A process for the simultaneous fabrication of microcavity structures on both sides of a film was proposed and demonstrated to develop a free-standing-type integrated absorber-emitter for use in solar thermophotovoltaic power generation systems. The absorber-emitter-integrated film comprised a heat-resistant Ni-W alloy deposited by electroplating. A two-step silicon mould was fabricated using deep reactive-ion etching and electron beam lithography. Cavity arrays with different unit sizes were successfully fabricated on both sides of the film; these arrays are suitable for use as a solar spectrum absorber and an infrared-selective emitter. Their emissivity spectra were characterised through UV-vis-NIR and Fourier transform infrared spectroscopy.

Fabrication of Single, Vertically Aligned Carbon Nanotubes in 3D Nanoscale Architectures

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Megerian, Krikor G.; Von Allmen, Paul A.; Baron, Richard L.

2010-01-01

Plasma-enhanced chemical vapor deposition (PECVD) and high-throughput manufacturing techniques for integrating single, aligned carbon nanotubes (CNTs) into novel 3D nanoscale architectures have been developed. First, the PECVD growth technique ensures excellent alignment of the tubes, since the tubes align in the direction of the electric field in the plasma as they are growing. Second, the tubes generated with this technique are all metallic, so their chirality is predetermined, which is important for electronic applications. Third, a wafer-scale manufacturing process was developed that is high-throughput and low-cost, and yet enables the integration of just single, aligned tubes with nanoscale 3D architectures with unprecedented placement accuracy and does not rely on e-beam lithography. Such techniques should lend themselves to the integration of PECVD grown tubes for applications ranging from interconnects, nanoelectromechanical systems (NEMS), sensors, bioprobes, or other 3D electronic devices. Chemically amplified polyhydroxystyrene-resin-based deep UV resists were used in conjunction with excimer laser-based (lambda = 248 nm) step-and-repeat lithography to form Ni catalyst dots = 300 nm in diameter that nucleated single, vertically aligned tubes with high yield using dc PECVD growth. This is the first time such chemically amplified resists have been used, resulting in the nucleation of single, vertically aligned tubes. In addition, novel 3D nanoscale architectures have been created using topdown techniques that integrate single, vertically aligned tubes. These were enabled by implementing techniques that use deep-UV chemically amplified resists for small-feature-size resolution; optical lithography units that allow unprecedented control over layer-to-layer registration; and ICP (inductively coupled plasma) etching techniques that result in near-vertical, high-aspect-ratio, 3D nanoscale architectures, in conjunction with the use of materials that are structurally and chemically compatible with the high-temperature synthesis of the PECVD-grown tubes. The techniques offer a wafer-scale process solution for integrating single PECVD-grown nanotubes into novel architectures that should accelerate their integration in 3D electronics in general. NASA can directly benefit from this technology for its extreme-environment planetary missions. Current Si transistors are inherently more susceptible to high radiation, and do not tolerate extremes in temperature. These novel 3D nanoscale architectures can form the basis for NEMS switches that are inherently less susceptible to radiation or to thermal extremes.

National Synchrotron Light Source annual report 1991. Volume 1, October 1, 1990--September 30, 1991

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hulbert, S.L.; Lazarz, N.M.

1992-04-01

This report discusses the following research conducted at NSLS: atomic and molecular science; energy dispersive diffraction; lithography, microscopy and tomography; nuclear physics; UV photoemission and surface science; x-ray absorption spectroscopy; x-ray scattering and crystallography; x-ray topography; workshop on surface structure; workshop on electronic and chemical phenomena at surfaces; workshop on imaging; UV FEL machine reviews; VUV machine operations; VUV beamline operations; VUV storage ring parameters; x-ray machine operations; x-ray beamline operations; x-ray storage ring parameters; superconducting x-ray lithography source; SXLS storage ring parameters; the accelerator test facility; proposed UV-FEL user facility at the NSLS; global orbit feedback systems; and NSLSmore » computer system.« less

Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Min, Guoquan; Song, Zhitang; Zhang, Jing; Liu, Yanbo; Zhang, Jianping

2010-05-01

This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.

Nanoimprinted polymer lasers with threshold below 100 W/cm2 using mixed-order distributed feedback resonators.

PubMed

Wang, Yue; Tsiminis, Georgios; Kanibolotsky, Alexander L; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-06-17

Organic semiconductor lasers were fabricated by UV-nanoimprint lithography with thresholds as low as 57 W/cm(2) under 4 ns pulsed operation. The nanoimprinted lasers employed mixed-order distributed feedback resonators, with second-order gratings surrounded by first-order gratings, combined with a light-emitting conjugated polymer. They were pumped by InGaN LEDs to produce green-emitting lasers, with thresholds of 208 W/cm(2) (102 nJ/pulse). These hybrid lasers incorporate a scalable UV-nanoimprint lithography process, compatible with high-performance LEDs, therefore we have demonstrated a coherent, compact, low-cost light source.

Diffractive element in extreme-UV lithography condenser

DOEpatents

Sweatt, William C.; Ray-Chaudhuri, Avijit

2001-01-01

Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

Diffractive element in extreme-UV lithography condenser

DOEpatents

Sweatt, William C.; Ray-Chaudhurl, Avijit K.

2000-01-01

Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

Method to create gradient index in a polymer

DOEpatents

Dirk, Shawn M; Johnson, Ross Stefan; Boye, Robert; Descour, Michael R; Sweatt, William C; Wheeler, David R; Kaehr, Bryan James

2014-10-14

Novel photo-writable and thermally switchable polymeric materials exhibit a refractive index change of .DELTA.n.gtoreq.1.0 when exposed to UV light or heat. For example, lithography can be used to convert a non-conjugated precursor polymer to a conjugated polymer having a higher index-of-refraction. Further, two-photon lithography can be used to pattern high-spatial frequency structures.

Fabrication of 3D nano-structures using reverse imprint lithography

NASA Astrophysics Data System (ADS)

Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-woo; Lee, Heon

2013-02-01

In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures. UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.

Fabrication of 3D nano-structures using reverse imprint lithography.

PubMed

Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-Woo; Lee, Heon

2013-02-01

In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures.UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.

Replication of cicada wing's nano-patterns by hot embossing and UV nanoimprinting.

PubMed

Hong, Sung-Hoon; Hwang, Jaeyeon; Lee, Heon

2009-09-23

The hydrophobicity of the cicada wing originates from its naturally occurring, surface nano-structure. The nano-structure of the cicada wing consists of an array of nano-sized pillars, 100 nm in diameter and 300 nm in height. In this study, the nano-structure of the cicada wing was successfully duplicated by using hot embossing lithography and UV nanoimprint lithography (NIL). The diameter and pitch of replication were the same as those of the original cicada wing and the height was a little smaller than that of the original master. The transmittance of the hot embossed PVC film was increased by 2-6% compared with that of the bare PVC film. The hydrophobicity was measured by water contact angle measurements. The water contact angle of the replica, made of UV cured polymer, was 132 degrees +/- 2 degrees , which was slightly lower than that of the original cicada wing (138 degrees +/- 2 degrees ), but much higher than that of the UV cured polymer surface without any nano-sized pillars (86 degrees ).

Replication of surface nano-structure of the wing of dragonfly ( Pantala Flavescens) using nano-molding and UV nanoimprint lithography

NASA Astrophysics Data System (ADS)

Cho, Joong-Yeon; Kim, Gyutae; Kim, Sungwook; Lee, Heon

2013-07-01

The hydrophobicity of a dragonfly's wing originates from the naturally occurring nano-structure on its surface. The nano-structure on a dragonfly's wing consists of an array of nano-sized pillars, 100 nm in diameter. We re-create this hydrophobicity on various substrates, such as Si, glass, curved acrylic polymer, and flexible PET film, by replicating the nano-structure using UV curable nano-imprint lithography (NIL) and PDMS molding. The success of the nano-structure duplication was confirmed using scanning electron microscopy (SEM). The hydrophobicity was measured by water-based contact angle measurements. The water contact angle of the replica made of UV cured polymer was 135° ± 2°, which was slightly lower than that of the original dragonfly's wing (145° ± 2°), but much higher than that of the UV cured polymer surface without any nano-sized pillars (80°). The hydrophobicity was further improved by applying a coating of Teflon-like material.

Uniformity of LED light illumination in application to direct imaging lithography

NASA Astrophysics Data System (ADS)

Huang, Ting-Ming; Chang, Shenq-Tsong; Tsay, Ho-Lin; Hsu, Ming-Ying; Chen, Fong-Zhi

2016-09-01

Direct imaging has widely applied in lithography for a long time because of its simplicity and easy-maintenance. Although this method has limitation of lithography resolution, it is still adopted in industries. Uniformity of UV irradiance for a designed area is an important requirement. While mercury lamps were used as the light source in the early stage, LEDs have drawn a lot of attention for consideration from several aspects. Although LED has better and better performance, arrays of LEDs are required to obtain desired irradiance because of limitation of brightness for a single LED. Several effects are considered that affect the uniformity of UV irradiance such as alignment of optics, temperature of each LED, performance of each LED due to production uniformity, and pointing of LED module. Effects of these factors are considered to study the uniformity of LED Light Illumination. Numerical analysis is performed by assuming a serious of control factors to have a better understanding of each factor.

Rapid prototyping of microstructures in polydimethylsiloxane (PDMS) by direct UV-lithography.

PubMed

Scharnweber, Tim; Truckenmüller, Roman; Schneider, Andrea M; Welle, Alexander; Reinhardt, Martina; Giselbrecht, Stefan

2011-04-07

Microstructuring of polydimethylsiloxane (PDMS) is a key step for many lab-on-a-chip (LOC) applications. In general, the structure is generated by casting the liquid prepolymer against a master. The production of the master in turn calls for special equipment and know how. Furthermore, a given master only allows the reproduction of the defined structure. We report on a simple, cheap and practical method to produce microstructures in already cured PDMS by direct UV-lithography followed by chemical development. Due to the available options during the lithographic process like multiple exposures, the method offers a high design flexibility granting easy access to complex and stepped structures. Furthermore, no master is needed and the use of pre-cured PDMS allows processing at ambient (light) conditions. Features down to approximately 5 µm and a depth of 10 µm can be realised. As a proof of principle, we demonstrate the feasibility of the process by applying the structures to various established soft lithography techniques.

In-line metrology for roll-to-roll UV assisted nanoimprint lithography using diffractometry

NASA Astrophysics Data System (ADS)

Kreuzer, Martin; Whitworth, Guy L.; Francone, Achille; Gomis-Bresco, Jordi; Kehagias, Nikolaos; Sotomayor-Torres, Clivia M.

2018-05-01

We describe and discuss the optical design of a diffractometer to carry out in-line quality control during roll-to-roll nanoimprinting. The tool measures diffractograms in reflection geometry, through an aspheric lens to gain fast, non-invasive information of any changes to the critical dimensions of target grating structures. A stepwise tapered linear grating with constant period was fabricated in order to detect the variation in grating linewidth through diffractometry. The minimum feature change detected was ˜40 nm to a precision of 10 nm. The diffractometer was then integrated with a roll-to-roll UV assisted nanoimprint lithography machine to gain dynamic measurements in situ.

Polarization control in flexible interference lithography for nano-patterning of different photonic structures with optimized contrast.

PubMed

He, Jianfang; Fang, Xiaohui; Lin, Yuanhai; Zhang, Xinping

2015-05-04

Half-wave plates were introduced into an interference-lithography scheme consisting of three fibers that were arranged into a rectangular triangle. Such a flexible and compact geometry allows convenient tuning of the polarizations of both the UV laser source and each branch arm. This not only enables optimization of the contrast of the produced photonic structures with expected square lattices, but also multiplies the nano-patterning functions of a fixed design of fiber-based interference lithography. The patterns of the photonic structures can be thus tuned simply by rotating a half-wave plate.

Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

PubMed Central

2013-01-01

Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718

Large area fabrication of plasmonic nanoparticle grating structure by conventional scanning electron microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sudheer,, E-mail: sudheer@rrcat.gov.in; Tiwari, P.; Rai, V. N.

Plasmonic nanoparticle grating (PNG) structure of different periods has been fabricated by electron beam lithography using silver halide based transmission electron microscope film as a substrate. Conventional scanning electron microscope is used as a fabrication tool for electron beam lithography. Optical microscope and energy dispersive spectroscopy (EDS) have been used for its morphological and elemental characterization. Optical characterization is performed by UV-Vis absorption spectroscopic technique.

Replication of cicada wing's nano-patterns by hot embossing and UV nanoimprinting

NASA Astrophysics Data System (ADS)

Hong, Sung-Hoon; Hwang, Jaeyeon; Lee, Heon

2009-09-01

The hydrophobicity of the cicada wing originates from its naturally occurring, surface nano-structure. The nano-structure of the cicada wing consists of an array of nano-sized pillars, 100 nm in diameter and 300 nm in height. In this study, the nano-structure of the cicada wing was successfully duplicated by using hot embossing lithography and UV nanoimprint lithography (NIL). The diameter and pitch of replication were the same as those of the original cicada wing and the height was a little smaller than that of the original master. The transmittance of the hot embossed PVC film was increased by 2-6% compared with that of the bare PVC film. The hydrophobicity was measured by water contact angle measurements. The water contact angle of the replica, made of UV cured polymer, was 132° ± 2°, which was slightly lower than that of the original cicada wing (138° ± 2°), but much higher than that of the UV cured polymer surface without any nano-sized pillars (86°).

Quadratic nonlinear optics to assess the morphology of riboflavin doped chitosan for eco-friendly lithography

NASA Astrophysics Data System (ADS)

Ray, Cédric; Caillau, Mathieu; Jonin, Christian; Benichou, Emmanuel; Moulin, Christophe; Salmon, Estelle; Maldonado, Melissa E.; Gomes, Anderson S. L.; Monnier, Virginie; Laurenceau, Emmanuelle; Leclercq, Jean-Louis; Chevolot, Yann; Delair, Thierry; Brevet, Pierre-François

2018-06-01

We report the use of the Second Harmonic Generation response from a riboflavin doped chitosan film as a characterization method of the film morphology. This film is of particular interest in the development of new and bio-sourced material for eco-friendly UV lithography. The method allows us to determine how riboflavin is distributed as a function of film depth in the sample. This possibility is of importance in order to have a better understanding of the riboflavin influence in chitosan films during the lithography process. On the contrary, linear optical techniques provide no information beyond the mere confirmation of the riboflavin presence.

2.5 dimension structures in deep proton lithography

NASA Astrophysics Data System (ADS)

Kasztelanic, Rafal

2006-04-01

There are several technologies for cheap mass fabrication of microelements. One of them is deep proton lithography, used for the fabrication of elements of high structural depth. In this technology, accelerated protons are usually focused or formed by a mask to light a target. The energy of the proton beam is enough for all the protons to get through the target, losing only a part of their kinesthetic energy. Protons leaving the target are counted in various ways, thanks to which it is possible to estimate the energy deposed inside the target. In the next step chemical development is used to get rid of the radiated part of the target. With the use of this method, various 2D microelements can be obtained and the proton beam plays the role of a knife, cutting out the required shapes from the material. However, in order to make elements of modified surface (2.5D surface) it is necessary to change the energy of the proton beam or to change the dose deposed inside the material. The current article presents a proposal of creating simple 2.5D structures with the use of the method modifying the deposed does. This entails the modification of the deep proton lithography setup, which results moving the part for measuring the deposed dose of energy before the target. Additionally, the new deep proton lithography setup operates in the air. This article presents the results of simulations, as well as experimental results for such a setup built for the tandem accelerator in Erlangen, Germany.

Branched poly(ethyleneimine): a versatile scaffold for patterning polymer brushes by means of remote photocatalytic lithography

NASA Astrophysics Data System (ADS)

Panzarasa, Guido; Dübner, Matthias; Soliveri, Guido; Edler, Matthias; Griesser, Thomas

2017-09-01

Patterning of functional surfaces is one of the cornerstones of nanotechnology as it allows the fabrication of sensors and lab-on-a-chip devices. Here, the patterning of self-assembled monolayers of branched poly(ethyleneimine) (bPEI) on silica was achieved by means of remote photocatalytic lithography. Moreover, when 2-bromoisobutyryl-modified bPEI was used, the resulting pattern could be amplified by grafting polymer brushes by means of surface-initiated atom transfer radical polymerization. In contrast to previous reports for the patterning of bPEI, the present approach can be conducted in minutes instead of hours, reducing the exposure time to UV radiation and enhancing the overall efficiency. Furthermore, our approach is much more user-friendly, allowing a facile fabrication of patterned initiator-modified surfaces and the use of inexpensive instrumentation such as a low-power UV source and a simple photomask. Considering the versatility of bPEI as a scaffold for the development of biosensors, patterning by means of remote photocatalytic lithography will open new opportunities in a broad field of applications.

Characterization of Antisticking Layers for UV Nanoimprint Lithography Molds with Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Masaaki Kurihara,; Sho Hatakeyama,; Noriko Yamada,; Takeya Shimomura,; Takaharu Nagai,; Kouji Yoshida,; Tatsuya Tomita,; Morihisa Hoga,; Naoya Hayashi,; Hiroyuki Ohtani,; Masamichi Fujihira,

2010-06-01

Antisticking layers (ASLs) on UV nanoimprint lithography (UV-NIL) molds were characterized by scanning probe microscopies (SPMs) in addition to macroscopic analyses of work of adhesion and separation force. Local physical properties of the ASLs were measured by atomic force microscopy (AFM) and friction force microscopy (FFM). The behavior of local adhesive forces measured with AFM on several surfaces was consistent with that of work of adhesion obtained from contact angle. The ASLs were coated by two different processes, i.e., one is a vapor-phase process and the other a spin-coating process. The homogeneity of the ASLs prepared by the vapor-phase process was better than that of those prepared by the spin-coating process. In addition, we measured the thicknesses of ASL patterns prepared by a lift-off method to investigate the effect of the ASL thicknesses on critical dimensions of the molds with ASLs and found that this effect is not negligible.

SWS grating for UV band filter by nano-imprint

NASA Astrophysics Data System (ADS)

Lin, Jian-Shian; Liao, Ke-Hao; Chen, Chang-Tai; Lai, Chieh-Lung; Ko, Cheng-Hao

2009-05-01

Regarding to researches on manufacturing process, the fabrication of nano structures on SWS (subwavelength structured) grating are mainly produced by photo lithography. We find that UV light transmission efficiency of PET film significantly drops 50% when we put nano structures on the surface of material. In this paper, we add nano structures on the surface of PET film and create a UV band filter. Decent optical filtering effects can be achieved by combining the characteristics of PET materials with nano structures on their surfaces.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

PubMed

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Imbalance aware lithography hotspot detection: a deep learning approach

NASA Astrophysics Data System (ADS)

Yang, Haoyu; Luo, Luyang; Su, Jing; Lin, Chenxi; Yu, Bei

2017-03-01

With the advancement of VLSI technology nodes, light diffraction caused lithographic hotspots have become a serious problem affecting manufacture yield. Lithography hotspot detection at the post-OPC stage is imperative to check potential circuit failures when transferring designed patterns onto silicon wafers. Although conventional lithography hotspot detection methods, such as machine learning, have gained satisfactory performance, with extreme scaling of transistor feature size and more and more complicated layout patterns, conventional methodologies may suffer from performance degradation. For example, manual or ad hoc feature extraction in a machine learning framework may lose important information when predicting potential errors in ultra-large-scale integrated circuit masks. In this paper, we present a deep convolutional neural network (CNN) targeting representative feature learning in lithography hotspot detection. We carefully analyze impact and effectiveness of different CNN hyper-parameters, through which a hotspot-detection-oriented neural network model is established. Because hotspot patterns are always minorities in VLSI mask design, the training data set is highly imbalanced. In this situation, a neural network is no longer reliable, because a trained model with high classification accuracy may still suffer from high false negative results (missing hotspots), which is fatal in hotspot detection problems. To address the imbalance problem, we further apply minority upsampling and random-mirror flipping before training the network. Experimental results show that our proposed neural network model achieves highly comparable or better performance on the ICCAD 2012 contest benchmark compared to state-of-the-art hotspot detectors based on deep or representative machine leaning.

Classifying the Basic Parameters of Ultraviolet Copper Bromide Laser

NASA Astrophysics Data System (ADS)

Gocheva-Ilieva, S. G.; Iliev, I. P.; Temelkov, K. A.; Vuchkov, N. K.; Sabotinov, N. V.

2009-10-01

The performance of deep ultraviolet copper bromide lasers is of great importance because of their applications in medicine, microbiology, high-precision processing of new materials, high-resolution laser lithography in microelectronics, high-density optical recording of information, laser-induced fluorescence in plasma and wide-gap semiconductors and more. In this paper we present a statistical study on the classification of 12 basic lasing parameters, by using different agglomerative methods of cluster analysis. The results are based on a big amount of experimental data for UV Cu+ Ne-CuBr laser with wavelengths 248.6 nm, 252.9 nm, 260.0 nm and 270.3 nm, obtained in Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences. The relevant influence of parameters on laser generation is also evaluated. The results are applicable in computer modeling and planning the experiments and further laser development with improved output characteristics.

Picosecond UV single photon detectors with lateral drift field: Concept and technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakimov, M.; Oktyabrsky, S.; Murat, P.

2015-09-01

Group III–V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III–V processing technologies, such as interface and surface passivation, large area deep submicron lithography with high-aspect ratio etching primarily driven by the metal-oxide-semiconductor field-effect transistor development can also be used for other applications. In this paper we will focus on photodetectors with the drift field parallel to the surface. We compare the proposed concept to the state-of-the-art Si-based technology and discuss requirements which need to be satisfied for such detectors to be used in a single photon counting modemore » in blue and ultraviolet spectral region with about 10 ps photon timing resolution essential for numerous applications ranging from high-energy physics to medical imaging.« less

Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

NASA Astrophysics Data System (ADS)

Watkins, James

2013-03-01

Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

Nanofabrication on unconventional substrates using transferred hard masks

DOE PAGES

Li, Luozhou; Bayn, Igal; Lu, Ming; ...

2015-01-15

Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantationmore » are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.« less

The development of 8 inch roll-to-plate nanoimprint lithography (8-R2P-NIL) system

NASA Astrophysics Data System (ADS)

Lee, Lai Seng; Mohamed, Khairudin; Ooi, Su Guan

2017-07-01

Growth in semiconductor and integrated circuit industry was observed in the past decennium of years for industrial technology which followed Moore's law. The line width of nanostructure to be exposed was influenced by the essential technology of photolithography. Thus, it is crucial to have a low cost and high throughput manufacturing process for nanostructures. Nanoimprint Lithography technique invented by Stephen Y. Chou was considered as major nanolithography process to be used in future integrated circuit and integrated optics. The drawbacks of high imprint pressure, high imprint temperature, air bubbles formation, resist sticking to mold and low throughput of thermal nanoimprint lithography on silicon wafer have yet to be solved. Thus, the objectives of this work is to develop a high throughput, low imprint force, room temperature UV assisted 8 inch roll to plate nanoimprint lithography system capable of imprinting nanostructures on 200 mm silicon wafer using roller imprint with flexible mold. A piece of resist spin coated silicon wafer was placed onto vacuum chuck drives forward by a stepper motor. A quartz roller wrapped with a piece of transparent flexible mold was used as imprint roller. The imprinted nanostructures were cured by 10 W, 365 nm UV LED which situated inside the quartz roller. Heat generated by UV LED was dissipated by micro heat pipe. The flexible mold detaches from imprinted nanostructures in a 'line peeling' pattern and imprint pressure was measured by ultra-thin force sensors. This system has imprinting speed capability ranging from 0.19 mm/s to 5.65 mm/s, equivalent to imprinting capability of 3 to 20 pieces of 8 inch wafers per hour. Speed synchronization between imprint roller and vacuum chuck was achieved by controlling pulse rate supplied to stepper motor which drive the vacuum chuck. The speed different ranging from 2 nm/s to 98 nm/s is achievable. Vacuum chuck height was controlled by stepper motor with displacement of 5 nm/step.

Diffraction spectral filter for use in extreme-UV lithography condenser

DOEpatents

Sweatt, William C.; Tichenor, Daniel A.; Bernardez, Luis J.

2002-01-01

A condenser system for generating a beam of radiation includes a source of radiation light that generates a continuous spectrum of radiation light; a condenser comprising one or more first optical elements for collecting radiation from the source of radiation light and for generating a beam of radiation; and a diffractive spectral filter for separating first radiation light having a particular wavelength from the continuous spectrum of radiation light. Cooling devices can be employed to remove heat generated. The condenser system can be used with a ringfield camera in projection lithography.

Wafer chamber having a gas curtain for extreme-UV lithography

DOEpatents

Kanouff, Michael P.; Ray-Chaudhuri, Avijit K.

2001-01-01

An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

Imbalance aware lithography hotspot detection: a deep learning approach

NASA Astrophysics Data System (ADS)

Yang, Haoyu; Luo, Luyang; Su, Jing; Lin, Chenxi; Yu, Bei

2017-07-01

With the advancement of very large scale integrated circuits (VLSI) technology nodes, lithographic hotspots become a serious problem that affects manufacture yield. Lithography hotspot detection at the post-OPC stage is imperative to check potential circuit failures when transferring designed patterns onto silicon wafers. Although conventional lithography hotspot detection methods, such as machine learning, have gained satisfactory performance, with the extreme scaling of transistor feature size and layout patterns growing in complexity, conventional methodologies may suffer from performance degradation. For example, manual or ad hoc feature extraction in a machine learning framework may lose important information when predicting potential errors in ultra-large-scale integrated circuit masks. We present a deep convolutional neural network (CNN) that targets representative feature learning in lithography hotspot detection. We carefully analyze the impact and effectiveness of different CNN hyperparameters, through which a hotspot-detection-oriented neural network model is established. Because hotspot patterns are always in the minority in VLSI mask design, the training dataset is highly imbalanced. In this situation, a neural network is no longer reliable, because a trained model with high classification accuracy may still suffer from a high number of false negative results (missing hotspots), which is fatal in hotspot detection problems. To address the imbalance problem, we further apply hotspot upsampling and random-mirror flipping before training the network. Experimental results show that our proposed neural network model achieves comparable or better performance on the ICCAD 2012 contest benchmark compared to state-of-the-art hotspot detectors based on deep or representative machine leaning.

Modification of insulating diamond-like films by pulsed UV laser emission

NASA Astrophysics Data System (ADS)

Ageev, V. P.; Glushko, T. N.; Dorfman, V. F.; Kuzmichev, A. V.; Pypkin, B. N.

1991-07-01

The basic regimes of the modification of diamond-like a-C/Si/O:H films by the emission of the KrF laser are investigated. In particular, attention is given to the effect of the graphitization process on the spatial resolution of the dimensional treament. The possibility of the submicron cross-linking of the films using the methods of ablative UV laser lithography is demonstrated.

Multilength Scale Patterning of Functional Layers by Roll-to-Roll Ultraviolet-Light-Assisted Nanoimprint Lithography.

PubMed

Leitgeb, Markus; Nees, Dieter; Ruttloff, Stephan; Palfinger, Ursula; Götz, Johannes; Liska, Robert; Belegratis, Maria R; Stadlober, Barbara

2016-05-24

Top-down fabrication of nanostructures with high throughput is still a challenge. We demonstrate the fast (>10 m/min) and continuous fabrication of multilength scale structures by roll-to-roll UV-nanoimprint lithography on a 250 mm wide web. The large-area nanopatterning is enabled by a multicomponent UV-curable resist system (JRcure) with viscous, mechanical, and surface properties that are tunable over a wide range to either allow for usage as polymer stamp material or as imprint resist. The adjustable elasticity and surface chemistry of the resist system enable multistep self-replication of structured resist layers. Decisive for defect-free UV-nanoimprinting in roll-to-roll is the minimization of the surface energies of stamp and resist, and the stepwise reduction of the stiffness from one layer to the next is essential for optimizing the reproduction fidelity especially for nanoscale features. Accordingly, we demonstrate the continuous replication of 3D nanostructures and the high-throughput fabrication of multilength scale resist structures resulting in flexible polyethylenetherephtalate film rolls with superhydrophobic properties. Moreover, a water-soluble UV-imprint resist (JRlift) is introduced that enables residue-free nanoimprinting in roll-to-roll. Thereby we could demonstrate high-throughput fabrication of metallic patterns with only 200 nm line width.

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2005-04-05

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Scanning digital lithography providing high speed large area patterning with diffraction limited sub-micron resolution

NASA Astrophysics Data System (ADS)

Wen, Sy-Bor; Bhaskar, Arun; Zhang, Hongjie

2018-07-01

A scanning digital lithography system using computer controlled digital spatial light modulator, spatial filter, infinity correct optical microscope and high precision translation stage is proposed and examined. Through utilizing the spatial filter to limit orders of diffraction modes for light delivered from the spatial light modulator, we are able to achieve diffraction limited deep submicron spatial resolution with the scanning digital lithography system by using standard one inch level optical components with reasonable prices. Raster scanning of this scanning digital lithography system using a high speed high precision x-y translation stage and piezo mount to real time adjust the focal position of objective lens allows us to achieve large area sub-micron resolved patterning with high speed (compared with e-beam lithography). It is determined in this study that to achieve high quality stitching of lithography patterns with raster scanning, a high-resolution rotation stage will be required to ensure the x and y directions of the projected pattern are in the same x and y translation directions of the nanometer precision x-y translation stage.

Novel Processes for Modular Integration of Silicon-Germanium MEMS with CMOS Electronics

DTIC Science & Technology

2007-02-28

process limits the compatibility with further lithography steps. Using silicon as the MEMS structural material, most of the integration processes...structures are defined by lithography and deep reactive ion etching. A layer of gasket oxide is deposited as the sacrificial material between the...When the Bragg condition for constructive interference is obtained, a diffraction peak is produced and the relative peak height is proportional to

A new UV-curing elastomeric substrate for rapid prototyping of microfluidic devices

NASA Astrophysics Data System (ADS)

Alvankarian, Jafar; Yeop Majlis, Burhanuddin

2012-03-01

Rapid prototyping in the design cycle of new microfluidic devices is very important for shortening time-to-market. Researchers are facing the challenge to explore new and suitable substrates with simple and efficient microfabrication techniques. In this paper, we introduce and characterize a UV-curing elastomeric polyurethane methacrylate (PUMA) for rapid prototyping of microfluidic devices. The swelling and solubility of PUMA in different chemicals is determined. Time-dependent measurements of water contact angle show that the native PUMA is hydrophilic without surface treatment. The current monitoring method is used for measurement of the electroosmotic flow mobility in the microchannels made from PUMA. The optical, physical, thermal and mechanical properties of PUMA are evaluated. The UV-lithography and molding process is used for making micropillars and deep channel microfluidic structures integrated to the supporting base layer. Spin coating is characterized for producing different layer thicknesses of PUMA resin. A device is fabricated and tested for examining the strength of different bonding techniques such as conformal, corona treating and semi-curing of two PUMA layers in microfluidic application and the results show that the bonding strengths are comparable to that of PDMS. We also report fabrication and testing of a three-layer multi inlet/outlet microfluidic device including a very effective fluidic interconnect for application demonstration of PUMA as a promising new substrate. A simple micro-device is developed and employed for observing the pressure deflection of membrane made from PUMA as a very effective elastomeric valve in microfluidic devices.

Fabrication of nanostructured transmissive optical devices on ITO-glass with UV1116 photoresist using high-energy electron beam lithography.

PubMed

Williams, Calum; Bartholomew, Richard; Rughoobur, Girish; Gordon, George S D; Flewitt, Andrew J; Wilkinson, Timothy D

2016-12-02

High-energy electron beam lithography for patterning nanostructures on insulating substrates can be challenging. For high resolution, conventional resists require large exposure doses and for reasonable throughput, using typical beam currents leads to charge dissipation problems. Here, we use UV1116 photoresist (Dow Chemical Company), designed for photolithographic technologies, with a relatively low area dose at a standard operating current (80 kV, 40-50 μC cm -2 , 1 nAs -1 ) to pattern over large areas on commercially coated ITO-glass cover slips. The minimum linewidth fabricated was ∼33 nm with 80 nm spacing; for isolated structures, ∼45 nm structural width with 50 nm separation. Due to the low beam dose, and nA current, throughput is high. This work highlights the use of UV1116 photoresist as an alternative to conventional e-beam resists on insulating substrates. To evaluate suitability, we fabricate a range of transmissive optical devices, that could find application for customized wire-grid polarisers and spectral filters for imaging, which operate based on the excitation of surface plasmon polaritons in nanosized geometries, with arrays encompassing areas ∼0.25 cm 2 .

Fabrication of nanostructured transmissive optical devices on ITO-glass with UV1116 photoresist using high-energy electron beam lithography

NASA Astrophysics Data System (ADS)

Williams, Calum; Bartholomew, Richard; Rughoobur, Girish; Gordon, George S. D.; Flewitt, Andrew J.; Wilkinson, Timothy D.

2016-12-01

High-energy electron beam lithography for patterning nanostructures on insulating substrates can be challenging. For high resolution, conventional resists require large exposure doses and for reasonable throughput, using typical beam currents leads to charge dissipation problems. Here, we use UV1116 photoresist (Dow Chemical Company), designed for photolithographic technologies, with a relatively low area dose at a standard operating current (80 kV, 40-50 μC cm-2, 1 nAs-1) to pattern over large areas on commercially coated ITO-glass cover slips. The minimum linewidth fabricated was ˜33 nm with 80 nm spacing; for isolated structures, ˜45 nm structural width with 50 nm separation. Due to the low beam dose, and nA current, throughput is high. This work highlights the use of UV1116 photoresist as an alternative to conventional e-beam resists on insulating substrates. To evaluate suitability, we fabricate a range of transmissive optical devices, that could find application for customized wire-grid polarisers and spectral filters for imaging, which operate based on the excitation of surface plasmon polaritons in nanosized geometries, with arrays encompassing areas ˜0.25 cm2.

Supercritical CO2 drying of poly(methyl methacrylate) photoresist for deep x-ray lithography: a brief note

NASA Astrophysics Data System (ADS)

Shukla, Rahul; Abhinandan, Lala; Sharma, Shivdutt

2017-07-01

Poly(methyl methacrylate) (PMMA) is an extensively used positive photoresist for deep x-ray lithography. The post-development release of the microstructures of PMMA becomes very critical for high aspect ratio fragile and freestanding microstructures. Release of high aspect ratio comb-drive microstructure of PMMA made by one-step x-ray lithography (OXL) is studied. The effect of low-surface tension Isopropyl alcohol (IPA) over water is investigated for release of the high aspect ratio microstructures using conventional and supercritical (SC) CO2 drying. The results of conventional drying are also compared for the samples released or dried in both in-house developed and commercial SC CO2 dryer. It is found that in all cases the microstructures of PMMA are permanently deformed and damaged while using SC CO2 for drying. For free-standing high aspect ratio microstructures of PMMA made by OXL, it is advised to use low-surface tension IPA over DI water. However, this brings a limitation on the design of the microstructure.

Improved Bilayer Resist System Using Contrast-Enhanced Lithography With Water-Soluble Photopolymer

NASA Astrophysics Data System (ADS)

Sasago, Masaru; Endo, Masayuki; Hirai, Yoshihiko; Ogawa, Kazufurni; Ishihara, Takeshi

1986-07-01

A new water-soluble contract enhanced material, WSP (Water-soluble Photopolymer), has been developed. The WSP is composed of a mainpolymer and a photobleachable reagents. The mainpolymer is a water-soluble polymer mixed with pullulan (refined through biotechnological process) and polyvinyl-pyrolidone (PVP). The photo-bleachable reagent is of a diazonium compound gorup. The introduction of the mainpolymer and photobleach-able reagent mixture has improved filmity, gas transparency, photobleaching characteristics and solubility in alkaline which are essential to the device fabrication. Submicron photoresist patterns are successfully fabricated by a simple sequence of photolithography process. The WSP layer has been applied to the bilayer resist system--deep-UV portable conformable masking (PCM)--that is not affected by VLSI's topography, and is able to fabricate highly accurate pattern. The aqueous developable layer, PMGI, with high organic solvent resistance is used in the bottom layer. Therefore, no interfacial mixing with conventional positive resist top layer is observed. Furthermore, deep-UV exposure method has been used for the KrF excimer laser optical system in order to increase high throughput. From the experiments, it has been confirmed that good resist transfer profile can be realized by the use of WSP, and that the submicron resist patterns with high aspect-ratio can be developed on the nonplaner wafer with steps of up to 41m by the combination of the WSP with the PCM system. By this technology, has been improved the weak point: variation in the line width due to the thickness of contrast-enhanced layer when the CEL technology is applied, and dependency of both the finished resist profile and the line-width accuracy on the thickness of the top layer resist when the PCM system is adopted.

Mask technology for EUV lithography

NASA Astrophysics Data System (ADS)

Bujak, M.; Burkhart, Scott C.; Cerjan, Charles J.; Kearney, Patrick A.; Moore, Craig E.; Prisbrey, Shon T.; Sweeney, Donald W.; Tong, William M.; Vernon, Stephen P.; Walton, Christopher C.; Warrick, Abbie L.; Weber, Frank J.; Wedowski, Marco; Wilhelmsen, Karl C.; Bokor, Jeffrey; Jeong, Sungho; Cardinale, Gregory F.; Ray-Chaudhuri, Avijit K.; Stivers, Alan R.; Tejnil, Edita; Yan, Pei-yang; Hector, Scott D.; Nguyen, Khanh B.

1999-04-01

Extreme UV Lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. EUVL uses 10-14 nm light as envisioned by the EUV Limited Liability Company, a consortium formed by Intel and supported by Motorola and AMD to perform R and D work at three national laboratories. Much work has already taken place, with the first prototypical cameras operational at 13.4 nm using low energy laser plasma EUV light sources to investigate issues including the source, camera, electro- mechanical and system issues, photoresists, and of course the masks. EUV lithograph masks are fundamentally different than conventional photolithographic masks as they are reflective instead of transmissive. EUV light at 13.4 nm is rapidly absorbed by most materials, thus all light transmission within the EUVL system from source to silicon wafer, including EUV reflected from the mask, is performed by multilayer mirrors in vacuum.

Latest results on solarization of optical glasses with pulsed laser radiation

NASA Astrophysics Data System (ADS)

Jedamzik, Ralf; Petzold, Uwe

2017-02-01

Femtosecond lasers are more and more used for material processing and lithography. Femtosecond laser help to generate three dimensional structures in photoresists without using masks in micro lithography. This technology is of growing importance for the field of backend lithography or advanced packaging. Optical glasses used for beam shaping and inspection tools need to withstand high laser pulse energies. Femtosecond laser radiation in the near UV wavelength range generates solarization effects in optical glasses. In this paper results are shown of femtosecond laser solarization experiments on a broad range of optical glasses from SCHOTT. The measurements have been performed by the Laser Zentrum Hannover in Germany. The results and their impact are discussed in comparison to traditional HOK-4 and UVA-B solarization measurements of the same materials. The target is to provide material selection guidance to the optical designer of beam shaping lens systems.

Imprintable, bendable, and shape-conformable polymer electrolytes for versatile-shaped lithium-ion batteries.

PubMed

Kil, Eun-Hye; Choi, Keun-Ho; Ha, Hyo-Jeong; Xu, Sheng; Rogers, John A; Kim, Mi Ri; Lee, Young-Gi; Kim, Kwang Man; Cho, Kuk Young; Lee, Sang-Young

2013-03-13

A class of imprintable, bendable, and shape-conformable polymer electrolyte with excellent electrochemical performance in a lithium battery system is reported. The material consists of a UV-cured polymer matrix, high-boiling point liquid electrolyte, and Al2 O3 nanoparticles, formulated for use in lithium-ion batteries with 3D-structured electrodes or flexible characteristics. The unique structural design and well-tuned rheological characteristics of the UV-curable electrolyte mixture, in combination with direct UV-assisted nanoimprint lithography, allow the successful fabrication of polymer electrolytes in geometries not accessible with conventional materials. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deep UV laser-induced fluorescence detection of unlabeled drugs and proteins in microchip electrophoresis.

PubMed

Schulze, Philipp; Ludwig, Martin; Kohler, Frank; Belder, Detlev

2005-03-01

Deep UV fluorescence detection at 266-nm excitation wavelength has been realized for sensitive detection in microchip electrophoresis. For this purpose, an epifluorescence setup was developed enabling the coupling of a deep UV laser into a commercial fluorescence microscope. Deep UV laser excitation utilizing a frequency quadrupled pulsed laser operating at 266 nm shows an impressive performance for native fluorescence detection of various compounds in fused-silica microfluidic devices. Aromatic low molecular weight compounds such as serotonin, propranolol, a diol, and tryptophan could be detected at low-micromolar concentrations. Deep UV fluorescence detection was also successfully employed for the detection of unlabeled basic proteins. For this purpose, fused-silica chips dynamically coated with hydroxypropylmethyl cellulose were employed to suppress analyte adsorption. Utilizing fused-silica chips permanently coated with poly(vinyl alcohol), it was also possible to separate and detect egg white chicken proteins. These data show that deep UV fluorescence detection significantly widens the application range of fluorescence detection in chip-based analysis techniques.

SCIL nanoimprint solutions: high-volume soft NIL for wafer scale sub-10nm resolution

NASA Astrophysics Data System (ADS)

Voorkamp, R.; Verschuuren, M. A.; van Brakel, R.

2016-10-01

Nano-patterning materials and surfaces can add unique functionalities and properties which cannot be obtained in bulk or micro-structured materials. Examples range from hetro-epitaxy of semiconductor nano-wires to guiding cell expression and growth on medical implants. [1] Due to the cost and throughput requirements conventional nano-patterning techniques such as deep UV lithography (cost and flat substrate demands) and electron-beam lithography (cost, throughput) are not an option. Self-assembly techniques are being considered for IC manufacturing, but require nano-sized guiding patterns, which have to be fabricated in any case.[2] Additionally, the self-assembly process is highly sensitive to the environment and layer thickness, which is difficult to control on non-flat surfaces such as PV silicon wafers or III/V substrates. Laser interference lithography can achieve wafer scale periodic patterns, but is limited by the throughput due to intensity of the laser at the pinhole and only regular patterns are possible where the pattern fill fraction cannot be chosen freely due to the interference condition.[3] Nanoimprint lithography (NIL) is a promising technology for the cost effective fabrication of sub-micron and nano-patterns on large areas. The challenges for NIL are related to the technique being a contact method where a stamp which holds the patterns is required to be brought into intimate contact with the surface of the product. In NIL a strong distinction is made between the type of stamp used, either rigid or soft. Rigid stamps are made from patterned silicon, silica or plastic foils and are capable of sub-10nm resolution and wafer scale patterning. All these materials behave similar at the micro- to nm scale and require high pressures (5 - 50 Bar) to enable conformal contact to be made on wafer scales. Real world conditions such as substrate bow and particle contaminants complicate the use of rigid stamps for wafer scale areas, reducing stamp lifetime and yield. Soft stamps, usually based on silicone rubber, behave fundamentally different compared to rigid stamps on the macro-, micro- and nanometer level. The main limitation of traditional silicones is that they are too soft to support sub-micron features against surface tension based stamp deformation and collapse [4] and handling a soft stamp to achieve accurate feature placement on wafer scales to allow overlay alignment with sub-100nm overlay accuracy.

Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography

DOEpatents

Chapman, Henry N.; Nugent, Keith A.

2001-01-01

A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

Imprint lithography: lab curiosity or the real NGL

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Dauksher, William J.; Mancini, David P.; Nordquist, Kevin J.; Bailey, Todd C.; Johnson, Stephen C.; Stacey, Nicholas A.; Ekerdt, John G.; Willson, C. Grant; Sreenivasan, S. V.; Schumaker, Norman E.

2003-06-01

The escalating cost for Next Generation Lithography (NGL) tools is driven in part by the need for complex sources and optics. The cost for a single NGL tool could exceed $50M in the next few years, a prohibitive number for many companies. As a result, several researchers are looking at low cost alternative methods for printing sub-100 nm features. In the mid-1990s, several resarech groups started investigating different methods for imprinting small features. Many of these methods, although very effective at printing small features across an entire wafer, are limited in their ability to do precise overlay. In 1999, Willson and Sreenivasan discovered that imprinting could be done at low pressures and at room temperatures by using low viscosity UV curable monomers. The technology is typically referred to as Step and Flash Imprint Lithography. The use of a quartz template enabled the photocuring process to occur and also opened up the potential for optical alignment of teh wafer and template. This paper traces the development of nanoimprint lithography and addresses the issues that must be solved if this type of technology is to be applied to high-density silicon integrated circuitry.

Multichannel silicon WDM ring filters fabricated with DUV lithography

NASA Astrophysics Data System (ADS)

Lee, Jong-Moo; Park, Sahnggi; Kim, Gyungock

2008-09-01

We have fabricated 9-channel silicon wavelength-division-multiplexing (WDM) ring filters using 193 nm deep-ultraviolet (DUV) lithography and investigated the spectral properties of the ring filters by comparing the transmission spectra with and without an upper cladding. The average channel-spacing of the 9-channel WDM ring filter with a polymeric upper cladding is measured about 1.86 nm with the standard deviation of the channel-spacing about 0.34 nm. The channel crosstalk is about -30 dB, and the minimal drop loss is about 2 dB.

Coherent diffractive imaging methods for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

2017-12-01

The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

Fabrication of flexible grating sensing waveguide based on nano-imprint lithography and micro-replication process

NASA Astrophysics Data System (ADS)

Liu, Yueming; Tian, Weijian; Zhang, Shaojun

2009-05-01

Soft and flexible grating sensing waveguides is urgently demanded in application of micro-bending sensing and surface distortion sensing in medical catheter and smart skin sensing unit etc. Based on Nano-imprint Lithography and micro-replication process, polymer grating waveguides with core size 4μm×20μm and pitch 0.75μm are fabricated successfully in this paper. This novel grating waveguides is soft and flexible enough for related application and with the bio-medical safe feature when used in human body catheter. Fabricated processes are presented including the fabrication of micro mould and UV-replication process, and relative skills are discussed also in this paper.

Flexible and disposable plasmonic refractive index sensor using nanoimprint lithography

NASA Astrophysics Data System (ADS)

Mohapatra, Saswat; Moirangthem, Rakesh S.

2018-03-01

Nanostructure based plasmonic sensors are highly demanding in various areas due to their label-free and real-time detection capability. In this work, we developed an inexpensive flexible plasmonic sensor using optical disc nanograting via soft UV-nanoimprint lithography (UV-NIL). The polydimethylsiloxane (PDMS) stamp was used to transfer the nanograting structure from digital versatile discs (DVDs) to flexible and transparent polyethylene terephthalate (PET) substrate. Further, the plasmonic sensing substrate was obtained after coating a gold thin film on the top of the imprinted sample. The surface plasmon resonance (SPR) modes excited on gold coated nanograting structure appeared as a dip in the reflectance spectra measured at normal incident of white light in ambient air medium. Electromagnetic simulation based on finite element method (FEM) was used to understand and analyze the excited SPR modes and it is a very close agreement with the experimental results. The bulk refractive index (RI) sensing was performed by the sensor chip using water-glycerol mixture with different concentrations. Experimentally, the bulk RI sensitivity was found to be 797+/-17 nm/RIU.

Chip-scale pattern modification method for equalizing residual layer thickness in nanoimprint lithography

NASA Astrophysics Data System (ADS)

Youn, Sung-Won; Suzuki, Kenta; Hiroshima, Hiroshi

2018-06-01

A software program for modifying a mold design to obtain a uniform residual layer thickness (RLT) distribution has been developed and its validity was verified by UV-nanoimprint lithography (UV-NIL) simulation. First, the effects of granularity (G) on both residual layer uniformity and filling characteristics were characterized. For a constant complementary pattern depth and a granularity that was sufficiently larger than the minimum pattern width, filling time decreased with the decrease in granularity. For a pattern design with a wide density range and an irregular distribution, the choice of a small granularity was not always a good strategy since the etching depth required for a complementary pattern occasionally exceptionally increased with the decrease in granularity. On basis of the results obtained, the automated method was applied to a chip-scale pattern modification. Simulation results showed a marked improvement in residual layer thickness uniformity for a capacity-equalized (CE) mold. For the given conditions, the standard deviation of RLT decreased in the range from 1/3 to 1/5 in accordance with pattern designs.

Mastering multi-depth bio-chip patterns with DVD LBRs

NASA Astrophysics Data System (ADS)

Carson, Doug

2017-08-01

Bio chip and bio disc are rapidly growing technologies used in medical, health and other industries. While there are numerous unique designs and features, these products all rely on precise three-dimensional micro-fluidic channels or arrays to move, separate and combine samples under test. These bio chip and bio disc consumables are typically manufactured by molding these parts to a precise three-dimensional pattern on a negative metal stamper, or they can be made in smaller quantities using an appropriate curable resin and a negative mold/stamper. Stampers required for bio chips have been traditionally made using either micro machining or XY stepping lithography. Both of these technologies have their advantages as well as limitations when it comes to creating micro-fluidic patterns. Significant breakthroughs in continuous maskless lithography have enabled accurate and efficient manufacturing of micro-fluidic masters using LBRs (Laser Beam Recorders) and DRIE (Deep Reactive Ion Etching). The important advantages of LBR continuous lithography vs. XY stepping lithography and micro machining are speed and cost. LBR based continuous lithography is >100x faster than XY stepping lithography and more accurate than micro machining. Several innovations were required in order to create multi-depth patterns with sub micron accuracy. By combining proven industrial LBRs with DCA's G3-VIA pattern generator and DRIE, three-dimensional bio chip masters and stampers are being manufactured efficiently and accurately.

Development of UV-curable liquid for in-liquid fluorescence alignment in ultraviolet nanoimprint lithography

NASA Astrophysics Data System (ADS)

Ochiai, Kento; Kikuchi, Eri; Ishito, Yota; Kumagai, Mari; Nakamura, Takahiro; Nakagawa, Masaru

2018-06-01

We studied a fluorescent UV-curable resin suitable for fluorescence alignment in UV nanoimprinting. The addition of a cationic fluorescent dye caused radical photopolymerization of a UV-curable resin by exposure to visible excitation light for fluorescence microscope observation. The microscope observation of a resin film prepared by pressing resin droplets on a silica substrate with a fluorinated silica superstrate revealed that the cationic dye molecules were preferably adsorbed onto the silica surface. It was indicated that the dye molecules concentrated on the silica surface may cause the photocuring. A nonionic fluorescent dye was selected owing to its low polar symmetrical structure and its solubility parameter close to monomers. The fluorescent UV-curable resin with the nonionic dye showed uncured stability to exposure to visible excitation light for 30 min with a light intensity of 8.5 mW cm‑2 detected at 530 nm.

Rapid fabrication of embossing tools for the production of polymeric microfluidic devices for bioanalytical applications

NASA Astrophysics Data System (ADS)

Ford, Sean M.; McCandless, Andrew B.; Liu, Xuezhu; Soper, Steven A.

2001-09-01

In this paper we present embossing tools that were fabricated using both UV and X-ray lithography. The embossing tools created were used to emboss microfluidic channels for bioanalytical applications. Specifically, two tools were fabricated. One, using x-ray lithography, was fabricated for electrophoretic separations of DNA restriction fragment analysis. A second tool, fabricated using SU8, was designed for micro PCR applications. Depths of both tools were approximately 100 micrometers . Both tools were made by directly electroforming nickel on a stainless steel base. Fabrication time for the tool fabricated using x-ray lithography was less than 1 week, and largely depended on the availability of the x-ray source. The SU8 embossing tool was fabricated in less than 24 hours. The resulting nickel electroforms from both processes were extremely robust and did not fail under embossing conditions required for PMMA and/or polycarbonate. Some problems removing SU8 after electroforming were sen for smaller size gaps between nickel structures.

Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography

DOEpatents

Chapman, Henry N.; Nugent, Keith A.

2002-01-01

A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

Deep UV LEDs

NASA Astrophysics Data System (ADS)

Han, Jung; Amano, Hiroshi; Schowalter, Leo

2014-06-01

Deep ultraviolet (DUV) photons interact strongly with a broad range of chemical and biological molecules; compact DUV light sources could enable a wide range of applications in chemi/bio-sensing, sterilization, agriculture, and industrial curing. The much shorter wavelength also results in useful characteristics related to optical diffraction (for lithography) and scattering (non-line-of-sight communication). The family of III-N (AlGaInN) compound semiconductors offers a tunable energy gap from infrared to DUV. While InGaN-based blue light emitters have been the primary focus for the obvious application of solid state lighting, there is a growing interest in the development of efficient UV and DUV light-emitting devices. In the past few years we have witnessed an increasing investment from both government and industry sectors to further the state of DUV light-emitting devices. The contributions in Semiconductor Science and Technology 's special issue on DUV devices provide an up-to-date snapshot covering many relevant topics in this field. Given the expected importance of bulk AlN substrate in DUV technology, we are pleased to include a review article by Hartmann et al on the growth of AlN bulk crystal by physical vapour transport. The issue of polarization field within the deep ultraviolet LEDs is examined in the article by Braut et al. Several commercial companies provide useful updates in their development of DUV emitters, including Nichia (Fujioka et al ), Nitride Semiconductors (Muramoto et al ) and Sensor Electronic Technology (Shatalov et al ). We believe these articles will provide an excellent overview of the state of technology. The growth of AlGaN heterostructures by molecular beam epitaxy, in contrast to the common organo-metallic vapour phase epitaxy, is discussed by Ivanov et al. Since hexagonal boron nitride (BN) has received much attention as both a UV and a two-dimensional electronic material, we believe it serves readers well to include the article by Jiang et al on using BN for UV devices; potentially as a p-type wide band gap semiconductor contact. Finally, an in-depth discussion of one DUV application in defense, the non-line-of-sight (NLOS) communication, is given by Drost and Sadler. Overall, we believe that this special issue of Semiconductor Science and Technology provides a useful overview of the state-of-art in the field on DUV materials and devices. In view of the rapidly growing interest in this field, the demonstrated enhanced device performance, and the wide range of applications, this special issue can be considered a very timely contribution. Finally, we would like to thank the IOP editorial staff, in particular Alice Malhador, for their support and also like to thank all contributors for their efforts to make this special issue possible.

Matching OPC and masks on 300-mm lithography tools utilizing variable illumination settings

NASA Astrophysics Data System (ADS)

Palitzsch, Katrin; Kubis, Michael; Schroeder, Uwe P.; Schumacher, Karl; Frangen, Andreas

2004-05-01

CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zernike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be considered, nonetheless.

Stacking metal nano-patterns and fabrication of moth-eye structure

NASA Astrophysics Data System (ADS)

Taniguchi, Jun

2018-01-01

Nanoimprint lithography (NIL) can be used as a tool for three-dimensional nanoscale fabrication. In particular, complex metal pattern structures in polymer material are demanded as plasmonic effect devices and metamaterials. To fabricate of metallic color filter, we used silver ink and NIL techniques. Metallic color filter was composed of stacking of nanoscale silver disc patterns and polymer layers, thus, controlling of polymer layer thickness is necessary. To control of thickness of polymer layer, we used spin-coating of UV-curable polymer and NIL. As a result, ten stacking layers with 1000 nm layer thickness was obtained and red color was observed. Ultraviolet nanoimprint lithography (UV-NIL) is the most effective technique for mass fabrication of antireflection structure (ARS) films. For the use of ARS films in mobile phones and tablet PCs, which are touch-screen devices, it is important to protect the films from fingerprints and dust. In addition, as the nanoscale ARS that is touched by the hand is fragile, it is very important to obtain a high abrasion resistance. To solve these problems, a UV-curable epoxy resin has been developed that exhibits antifouling properties and high hardness. The high abrasion resistance ARS films are shown to withstand a load of 250 g/cm2 in the steel wool scratch test, and the reflectance is less than 0.4%.

Optimization of droplets for UV-NIL using coarse-grain simulation of resist flow

NASA Astrophysics Data System (ADS)

Sirotkin, Vadim; Svintsov, Alexander; Zaitsev, Sergey

2009-03-01

A mathematical model and numerical method are described, which make it possible to simulate ultraviolet ("step and flash") nanoimprint lithography (UV-NIL) process adequately even using standard Personal Computers. The model is derived from 3D Navier-Stokes equations with the understanding that the resist motion is largely directed along the substrate surface and characterized by ultra-low values of the Reynolds number. By the numerical approximation of the model, a special finite difference method is applied (a coarse-grain method). A coarse-grain modeling tool for detailed analysis of resist spreading in UV-NIL at the structure-scale level is tested. The obtained results demonstrate the high ability of the tool to calculate optimal dispensing for given stamp design and process parameters. This dispensing provides uniform filled areas and a homogeneous residual layer thickness in UV-NIL.

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

PubMed Central

Chao, Chung-Hua; Wei, Da-Hua

2015-01-01

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 oC. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 oC. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 oC by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application. PMID:26484561

Comparison of one- and two-photon optical beam-induced current imaging

NASA Astrophysics Data System (ADS)

Xu, Chris; Denk, Winfried

1999-08-01

Optical beam induced current (OBIC) imaging through the backside of integrated circuits was investigated in the wavelength λ region from 1.15 to 1.26 μm. With a subpicosecond excitation source and approximately 1 mW at the sample, the two-photon contribution to the generated photocurrent dominates at λ=1.25 μm but becomes negligible for λ<1.18 μm. One-photon- (1P-) and two-photon- (2P-) OBIC images are very different. In the 1P case a strong contribution by scattered light to the carrier generation leads to an edge enhancement effect that is entirely missing when 2P excitation dominates. 2P-OBIC images often show supply-voltage dependent intensity steps that are much sharper than the optical resolution permits. The advantages of 2P-OBIC lie in the spatial confinement of the free carrier generation, a more relevant contrast mechanism, and the promise of a substantial increase in spatial resolution because of the quadratic intensity dependence and the possibility of using silicon solid immersion lenses, which could eventually provide resolution sufficient for circuits made by deep UV lithography.

Formation of nanotunnels inside a resist film in laser interference lithography.

PubMed

Wei, Qi; Hu, Fanhua; Wang, Liyuan

2015-05-19

A few kinds of 2-diazo-1-naphthoquinone-4-sulfonates of poly(4-hydroxylstyrene) were prepared to form one-component i-line photoresists. In the laser interference lithography experiments of some of the photoresists, nanotunnels were observed to be aligned in the interior of the resist film. The shape and size of the nanotunnels remain virtually unchanged even under an increased exposure dose, indicating that the exposure energy is confined within the tunnel space. The formation of the nanotunnels results from the effect of standing waves and the permeation of developer from the surface deep into the resist films.

Fabrication and characterization of a deep ultraviolet wire grid polarizer with a chromium-oxide subwavelength grating.

PubMed

Asano, Kosuke; Yokoyama, Satoshi; Kemmochi, Atsushi; Yatagai, Toyohiko

2014-05-01

A wire grid polarizer comprised of chromium oxide is designed for a micro-lithography system using an ArF excimer laser. Optical properties for some material candidates are calculated using a rigorous coupled-wave analysis. The chromium oxide wire grid polarizer with a 90 nm period is fabricated by a double-patterning technique using KrF lithography and dry etching. The extinction ratio of the grating is greater than 20 dB (100:1) at a wavelength of 193 nm. Differences between the calculated and experimental results are discussed.

Lithographic technologies that haven't (yet) made it: lessons learned (Plenary Paper)

NASA Astrophysics Data System (ADS)

Pease, R. Fabian

2005-05-01

Since the introduction of the integrated circuit we have been inventing ways to extend the feature resolution beyond the optical limit. Using a focused electron beam linewidths of less than 100nm were demonstrated in 1960 and a mere three years later we achieved a 10nm feature. In the 1970's and 80's several semiconductor manufacturers undertook programs to introduce electron beam lithography (EBL) and X-ray lithography (XRL) based primarily on the rationale that both had superior resolution. Those programs consumed many millions of dollars and yielded, and continue to yield, very imaginative systems but have failed to displace deep ultraviolet lithography (DUVL) despite its inferior resolution. One lesson learned is an old one: to displace an established technology the new must be 10x better than the old. Thus it is irrational that even today a form of XRL employing 13nm X-rays is still being pursued despite showing performance inferior to that of DUVL. What constitutes 'better' depends on the application and thus there are niche markets for forms of lithography other than DUVL. But for mainstream semiconductor chip manufacturing there is no prospect within the next decade of displacing optical lithography which can be stretched even to 10nm features by applying novel techniques coupled with massive computation.

Fabrication of flexible oriented magnetic thin films with large in-plane uniaxial anisotropy by roll-to-roll nanoimprint lithography

NASA Astrophysics Data System (ADS)

Thantirige, Rukshan M.; John, Jacob; Pradhan, Nihar R.; Carter, Kenneth R.; Tuominen, Mark T.

2016-06-01

Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe nanostripes exhibit large in-plane uniaxial anisotropy and nearly square hysteresis loops with energy products (BHmax) exceeding 3 MGOe at room temperature. High density Fe nanostripes were fabricated on 70 nm flexible polyethylene terephthalate (PET) gratings, which were made by a roll-to-roll (R2R) UV nanoimprint lithography technique. We observed large in-plane uniaxial anisotropies along the long dimension of nanostripes that can be attributed to the shape. Temperature dependent hysteresis measurements confirm that the magnetization reversal is driven by non-coherent rotation reversal processes.

Mask fabrication process

DOEpatents

Cardinale, Gregory F.

2000-01-01

A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

Exploring EUV and SAQP pattering schemes at 5nm technology node

NASA Astrophysics Data System (ADS)

Hamed Fatehy, Ahmed; Kotb, Rehab; Lafferty, Neal; Jiang, Fan; Word, James

2018-03-01

For years, Moore's law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source's wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore's law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target's line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV. In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

Manufacturability study of masks created by inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Martin, Patrick M.; Progler, C. J.; Xiao, G.; Gray, R.; Pang, L.; Liu, Y.

2005-11-01

As photolithography is pushed to fabricate deep-sub wavelength devices for 90nm, 65nm and smaller technology nodes using available exposure tools (i.e., 248nm, 193nm steppers), photomask capability is becoming extremely critical. For example, PSM masks require more complicated processing; aggressive OPC makes the writing time longer and sometimes unpredictable; and, high MEEF imposes much more stringent demands on mask quality. Therefore, in order for any new lithography technology to be adopted into production, mask manufacturability must be studied thoroughly and carefully. In this paper we will present the mask manufacturability study on mask patterns created using Inverse Lithography Technology (ILT). Unlike conventional OPC methodologies, ILT uses a unique outcome-based technology to mathematically determine the mask features that produce the desired on-wafer results. ILT solves the most critical litho challenges of the deep sub-wavelength era. Potential benefits include: higher yield; expanded litho process windows; superb pattern fidelity at 90, 65 & 45-nm nodes; and reduced time-to-silicon - all without changing the existing lithography infrastructure and design-to-silicon flow. In this study a number of cell structures were selected and used as test patterns. "Luminized patterns" were generated for binary mask and attenuated phase-shift mask. Both conventional OPC patterns and "luminized patterns" were put on a test reticle side by side, and they all have a number of variations in term of correction aggressivity level and mask complexity. Mask manufacturability, including data fracturing, writing time, mask inspection, and metrology were studied. The results demonstrate that, by optimizing the inspection recipe, masks created using ILT technology can be made and qualified using current processes with a reasonable turn-around time.

Deep-UV Based Acousto-Optic Tunable Filter for Spectral Sensing Applications

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.

2006-01-01

In this paper, recent progress made in the development of quartz and KDP crystal based acousto-optic tunable filters (AOTF) are presented. These AOTFs are developed for operation over deep-UV to near-UV wavelengths of 190 nm to 400 nm. Preliminary output performance measurements of quartz AOTF and design specifications of KDP AOTF are presented. At 355 nm, the quartz AOTF device offered approx.15% diffraction efficiency with a passband full-width-half-maximum (FWHM) of less than 0.0625 nm. Further characterization of quartz AOTF devices at deep-UV wavelengths is progressing. The hermetic packaging of KDP AOTF is nearing completion. The solid-state optical sources being used for excitation include nonlinear optics based high-energy tunable UV transmitters that operate around 320 nm and 308 nm wavelengths, and a tunable deep-UV laser operating over 193 nm to 210 nm. These AOTF devices have been developed as turn-key devices for primarily for space-based chemical and biological sensing applications using laser induced Fluorescence and resonance Raman techniques.

GALEX Study of the UV Variability of Nearby Galaxies and a Deep Probe of the UV Luminosity Function

NASA Technical Reports Server (NTRS)

Schlegel, Eric

2005-01-01

The proposal has two aims - a deep exposure of NGC 300, about a factor of 10 deeper than the GALEX all-sky survey; and an examination of the UV variability. The data were received just prior to a series of proposal deadlines in early spring. A subsequent analysis delay includes a move from SAO to the University of Texas - San Antonio. Nevertheless, we have merged the data into a single deep exposure as well as undertaking a preliminary examination of the variability. No UV halo is present as detected in the GALEX observation of M83. No UV bursts are visible; however a more stringent limit will only be obtained through a differencing of the sub-images. Papers: we expect 2 papers at about 12 pages/paper to flow from this project. The first paper will report on the time variability while the second will focus on the deep UV image obtained from stacking the individual observations.

Demonstration of miniaturized 20mW CW 280nm and 266nm solid-state UV laser sources

NASA Astrophysics Data System (ADS)

Landru, Nicolas; Georges, Thierry; Beaurepaire, Julien; Le Guen, Bruno; Le Bail, Guy

2015-02-01

Visible 561 nm and 532 nm laser emissions from 14-mm long DPSS monolithic cavities are frequency converted to deep UV 280 nm and 266 nm in 16-mm long monolithic external cavities. Wavelength conversion is fully insensitive to mechanical vibrations and the whole UV laser sources fit in a miniaturized housing. More than 20 mW deep UV laser emission is demonstrated with high power stability, low noise and good beam quality. Aging tests are in progress but long lifetimes are expected thanks to the cavity design. Protein detection and deep UV resonant Raman spectroscopy are applications that could benefit from these laser sources.

New solutions to realize complex optical systems by a combination of diffractive and refractive optical components

NASA Astrophysics Data System (ADS)

Brunner, Robert; Steiner, Reinhard; Dobschal, Hans-Juergen; Martin, Dietrich; Burkhardt, Matthias; Helgert, Michael

2003-11-01

Diffractive optical elements (DOEs) have a great potential in the complete or partial substitution of refractive or reflective optical elements in imaging systems. The greater design flexibility compared to an all-refractive/reflective solution allows a more convenient realization of the optical systems and additionally opens up new possibilities for optimizing the performance or compactness. To demonstrate the opportunities of the hybrid optical concept we discuss different imaging systems for various applications. We present the lens design of a hybrid microscope objective which is especially applicable for wafer inspection technologies. Meeting the requirements for such a system used in the deep-UV regime (248 nm) is very challenging. The short wavelength limits the material selection and demands cement free optical groups. The additional requirement of an autofocus system, working at a wavelength in the near infrared region, is fulfilled by the special combination of two selected and adjusted DOEs. Furthermore, we discuss the opportunities of the hybrid concept c of a slit lamp used for ophthalmologic examinations. The DOEs are the basic elements of this hybrid concept. We demonstrate that holographic lithography is an appropriate technology to realize a wide variety of elements with different profile geometries. We address in particular the additional possibilities of an UV-laser system as an exposure tool. Additionally to the high spatial frequencies, the 266 nm exposure wavelength allows the use of novel photo resists with advantageous development behavior.

Spatial and directional control of self-assembled wrinkle patterns by UV light absorption

NASA Astrophysics Data System (ADS)

Kortz, C.; Oesterschulze, E.

2017-12-01

Wrinkle formation on surfaces is a phenomenon that is observed in layered systems with a compressed elastic thin capping layer residing on a viscoelastic film. So far, the properties of the viscoelastic material could only be changed replacing it by another material. Here, we propose to use a photosensitive material whose viscoelastic properties, Young's modulus, and glass transition temperature can easily be adjusted by the absorption of UV light. Employing UV lithography masks during the exposure, we gain additionally spatial and directional control of the self-assembled wrinkle pattern formation that relies on a spinodal decomposition process. Inspired by the results on surface wrinkling and its dependence on the intrinsic stress, we also derive a method to avoid wrinkling locally by tailoring the mechanical stress distribution in the layered system choosing UV masks with convex patterns. This is of particular interest in technical applications where the buckling of surfaces is undesirable.

Low cost batch fabrication of microdevices using ultraviolet light-emitting diode photolithography technique

NASA Astrophysics Data System (ADS)

Lee, Neam Heng; Swamy, Varghese; Ramakrishnan, Narayanan

2016-01-01

Solid-state technology has enabled the use of light-emitting diodes (LEDs) in lithography systems due to their low cost, low power requirement, and higher efficiency relative to the traditional mercury lamp. Uniform irradiance distribution is essential for photolithography to ensure the critical dimension (CD) of the feature fabricated. However, light illuminated from arrays of LEDs can have nonuniform irradiance distribution, which can be a problem when using LED arrays as a source to batch-fabricate multiple devices on a large wafer piece. In this study, the irradiance distribution of an UV LED array was analyzed, and the separation distance between light source and mask optimized to obtain maximum irradiance uniformity without the use of a complex lens. Further, employing a diffuser glass enhanced the fabrication process and the CD loss was minimized to an average of 300 nm. To assess the performance of the proposed technology, batch fabrication of surface acoustic wave devices on lithium niobate substrate was carried out, and all the devices exhibited identical insertion loss of -18 dB at a resonance frequency of 39.33 MHz. The proposed low-cost UV lithography setup can be adapted in academic laboratories for research and teaching on microdevices.

The polarization modulation and fabrication method of two dimensional silica photonic crystals based on UV nanoimprint lithography and hot imprint

PubMed Central

Guo, Shuai; Niu, Chunhui; Liang, Liang; Chai, Ke; Jia, Yaqing; Zhao, Fangyin; Li, Ya; Zou, Bingsuo; Liu, Ruibin

2016-01-01

Based on a silica sol-gel technique, highly-structurally ordered silica photonic structures were fabricated by UV lithography and hot manual nanoimprint efforts, which makes large-scale fabrication of silica photonic crystals easy and results in low-cost. These photonic structures show perfect periodicity, smooth and flat surfaces and consistent aspect ratios, which are checked by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, glass substrates with imprinted photonic nanostructures show good diffraction performance in both transmission and reflection mode. Furthermore, the reflection efficiency can be enhanced by 5 nm Au nanoparticle coating, which does not affect the original imprint structure. Also the refractive index and dielectric constant of the imprinted silica is close to that of the dielectric layer in nanodevices. In addition, the polarization characteristics of the reflected light can be modulated by stripe nanostructures through changing the incident light angle. The experimental findings match with theoretical results, making silica photonic nanostructures functional integration layers in many optical or optoelectronic devices, such as LED and microlasers to enhance the optical performance and modulate polarization properties in an economical and large-scale way. PMID:27698465

Laser microprocessing and nanoengineering of large-area functional micro/nanostructures

NASA Astrophysics Data System (ADS)

Tang, M.; Xie, X. Z.; Yang, J.; Chen, Z. C.; Xu, L.; Choo, Y. S.; Hong, M. H.

2011-12-01

Laser microprocessing and nanoengineering are of great interest to both scientists and engineers, since the inspired properties of functional micro/nanostructures over large areas can lead to numerous unique applications. Currently laser processing systems combined with high speed automation ensure the focused laser beam to process various materials at a high throughput and a high accuracy over large working areas. UV lasers are widely used in both laser microprocessing and nanoengineering. However by improving the processing methods, green pulsed laser is capable of replacing UV lasers to make high aspect ratio micro-grooves on fragile and transparent sapphire substrates. Laser micro-texturing can also tune the wetting property of metal surfaces from hydrophilic to super-hydrophobic at a contact angle of 161° without chemical coating. Laser microlens array (MLA) can split a laser beam into multiple laser beams and reduce the laser spot size down to sub-microns. It can be applied to fabricate split ring resonator (SRR) meta-materials for THz sensing, surface plasmonic resonance (SPR) structures for NIR and molding tools for soft lithography. Furthermore, laser interference lithography combined with thermal annealing can obtain a large area of sub-50nm nano-dot clusters used for SPR applications.

The polarization modulation and fabrication method of two dimensional silica photonic crystals based on UV nanoimprint lithography and hot imprint.

PubMed

Guo, Shuai; Niu, Chunhui; Liang, Liang; Chai, Ke; Jia, Yaqing; Zhao, Fangyin; Li, Ya; Zou, Bingsuo; Liu, Ruibin

2016-10-04

Based on a silica sol-gel technique, highly-structurally ordered silica photonic structures were fabricated by UV lithography and hot manual nanoimprint efforts, which makes large-scale fabrication of silica photonic crystals easy and results in low-cost. These photonic structures show perfect periodicity, smooth and flat surfaces and consistent aspect ratios, which are checked by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, glass substrates with imprinted photonic nanostructures show good diffraction performance in both transmission and reflection mode. Furthermore, the reflection efficiency can be enhanced by 5 nm Au nanoparticle coating, which does not affect the original imprint structure. Also the refractive index and dielectric constant of the imprinted silica is close to that of the dielectric layer in nanodevices. In addition, the polarization characteristics of the reflected light can be modulated by stripe nanostructures through changing the incident light angle. The experimental findings match with theoretical results, making silica photonic nanostructures functional integration layers in many optical or optoelectronic devices, such as LED and microlasers to enhance the optical performance and modulate polarization properties in an economical and large-scale way.

X-ray/VUV transmission gratings for astrophysical and laboratory applications

NASA Technical Reports Server (NTRS)

Schattenburg, M. L.; Anderson, E. H.; Smith, Henry I.

1990-01-01

This paper describes the techniques used to fabricate deep-submicron-period transmission gratings for astrophysical and laboratory applications, with special attention given to the major steps involved in the transmission grating fabrication. These include the holographic lithography procedure used to pattern the master transmission grating, the fabrication of X-ray mask, the X-ray lithography step used to transfer the X-ray mask pattern into a substrate, and the electroplating of the substrate to form the final grating pattern. The various ways in which transmission gratings can be used in X-ray and VUV spectroscopy are discussed together with some examples of experiments reported in the literature.

Free-standing coating patterns fabricated by ultraviolet contact lithography using photosensitive sol-gel coatings

NASA Astrophysics Data System (ADS)

Xiang, Youlai; Du, Ai; Li, Xiaoguang; Sun, Wei; Wu, Shuai; Li, Tiemin; Liu, Mingfang; Zhou, Bin

2017-07-01

Photosensitive ZrO2-SiO2 hybrid sol-gel coatings containing large contents of chelating rings were prepared by using the zirconium n-butoxide (TBOZ) and methyltriethoxysilane (MTES) as hybrid precursors, and benzoylacetone (BZAC) as chelating agent. The change of ultraviolet (UV) absorption spectra, chemical composition, and optical properties of ZrO2-SiO2 hybrid sol-gel coatings were analyzed before and after UV exposure and calcination. The refractive index of the ZrO2-SiO2 hybrid gel coatings decreased from 1.673 to 1.561 with the increase of the molar content of MTES in precursors. The sol-gel coating patterns with the periods of 20.24 μm, 10.11 μm and 3.99 μm on the PAMS substrates were firstly obtained by using the photosensitive ZrO2-SiO2 hybrid sol-gel films as fundamental materials through a process of UV contact lithography with photo masks and etching with ethanol. Finally, the free-standing gel coating patterns supported by copper grids, with the period of 12.70 μm and line width of 4.93 μm, and the period of 14.20 μm and line width of 3.82 μm, were obtained by removing the PAMS thermal degradation sacrifice layer after being calcined at 330 °C. Micrometer-periodic free-standing gel coating patterns with different structure have potential applications in the laser physical experiments.

Post-print UV curing method for improving the mechanical properties of prototypes derived from two-photon lithography [A post-print UV curing method for improving the mechanical properties of prototypes derived from two-photon polymerization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oakdale, James S.; Ye, Jianchao; Smith, William L.

Here, two photon polymerization (TPP) is a precise, reliable, and increasingly popular technique for rapid prototyping of micro-scale parts with sub-micron resolution. The materials of choice underlying this process are predominately acrylic resins cross-linked via free-radical polymerization. Due to the nature of the printing process, the derived parts are only partially cured and the corresponding mechanical properties, i.e. modulus and ultimate strength, are lower than if the material were cross-linked to the maximum extent. Herein, post-print curing via UV-driven radical generation, is demonstrated to increase the overall degree of cross-linking of low density, TPP-derived structures.

Post-print UV curing method for improving the mechanical properties of prototypes derived from two-photon lithography [A post-print UV curing method for improving the mechanical properties of prototypes derived from two-photon polymerization

DOE PAGES

Oakdale, James S.; Ye, Jianchao; Smith, William L.; ...

2016-11-28

Here, two photon polymerization (TPP) is a precise, reliable, and increasingly popular technique for rapid prototyping of micro-scale parts with sub-micron resolution. The materials of choice underlying this process are predominately acrylic resins cross-linked via free-radical polymerization. Due to the nature of the printing process, the derived parts are only partially cured and the corresponding mechanical properties, i.e. modulus and ultimate strength, are lower than if the material were cross-linked to the maximum extent. Herein, post-print curing via UV-driven radical generation, is demonstrated to increase the overall degree of cross-linking of low density, TPP-derived structures.

Nanoimprint Lithography on curved surfaces prepared by fused deposition modelling

NASA Astrophysics Data System (ADS)

Köpplmayr, Thomas; Häusler, Lukas; Bergmair, Iris; Mühlberger, Michael

2015-06-01

Fused deposition modelling (FDM) is an additive manufacturing technology commonly used for modelling, prototyping and production applications. The achievable surface roughness is one of its most limiting aspects. It is however of great interest to create well-defined (nanosized) patterns on the surface for functional applications such as optical effects, electronics or bio-medical devices. We used UV-curable polymers of different viscosities and flexible stamps made of poly(dimethylsiloxane) (PDMS) to perform Nanoimprint Lithography (NIL) on FDM-printed curved parts. Substrates with different roughness and curvature were prepared using a commercially available 3D printer. The nanoimprint results were characterized by optical light microscopy, profilometry and atomic force microscopy (AFM). Our experiments show promising results in creating well-defined microstructures on the 3D-printed parts.

Effects of post exposure bake temperature and exposure time on SU-8 nanopattern obtained by electron beam lithography

NASA Astrophysics Data System (ADS)

Yasui, Manabu; Kazawa, Elito; Kaneko, Satoru; Takahashi, Ryo; Kurouchi, Masahito; Ozawa, Takeshi; Arai, Masahiro

2014-11-01

SU-8 is a photoresist imaged using UV rays. However, we investigated the characteristics of an SU-8 nanopattern obtained by electron beam lithography (EBL). In particular, we studied the relationship between post-exposure bake (PEB) temperature and exposure time on an SU-8 nanopattern with a focus on phase transition temperature. SU-8 residue was formed by increasing both PEB temperature and exposure time. To prevent the formation of this, Monte Carlo simulation was performed; the results of such simulation showed that decreasing the thickness of SU-8 can reduce the amount of residue from the SU-8 nanopattern. We confirmed that decreasing the thickness of SU-8 can also prevent the formation of residue from the SU-8 nanopattern with EBL.

Design and manufacture of optical system for use in ultraviolet lithography with the free-electron laser

NASA Astrophysics Data System (ADS)

Byrd, Donald A.; Viswanathan, Vriddhachalam K.; Woodfin, Gregg L.; Horn, William W.; Lazazzera, Vito J.; Schmell, Rodney A.

1993-08-01

At Los Alamos National Laboratory, we are preparing to image submicrometer-size features using the Free Electron Laser (FEL) operating at 248 nm. This article describes the optical transfer systems that were designed to relay the ultraviolet (UV) optical output of the FEL, resulting in expected imaged feature sizes in the range 0.3 - 0.5 micrometers . Nearly all optical subsystems are reflective, and once the coatings were optimized any optical wavelength could be used. All refractive optics were UV-grade fused silica. The optical design, engineering, and manufacture of the various component systems are described along with some experimental results.

A foldable electrode array for 3D recording of deep-seated abnormal brain cavities

NASA Astrophysics Data System (ADS)

Kil, Dries; De Vloo, Philippe; Fierens, Guy; Ceyssens, Frederik; Hunyadi, Borbála; Bertrand, Alexander; Nuttin, Bart; Puers, Robert

2018-06-01

Objective. This study describes the design and microfabrication of a foldable thin-film neural implant and investigates its suitability for electrical recording of deep-lying brain cavity walls. Approach. A new type of foldable neural electrode array is presented, which can be inserted through a cannula. The microfabricated electrode is specifically designed for electrical recording of the cavity wall of thalamic lesions resulting from stroke. The proof-of-concept is demonstrated by measurements in rat brain cavities. On implantation, the electrode array unfolds in the brain cavity, contacting the cavity walls and allowing recording at multiple anatomical locations. A three-layer microfabrication process based on UV-lithography and Reactive Ion Etching is described. Electrochemical characterization of the electrode is performed in addition to an in vivo experiment in which the implantation procedure and the unfolding of the electrode are tested and visualized. Main results. Electrochemical characterization validated the suitability of the electrode for in vivo use. CT imaging confirmed the unfolding of the electrode in the brain cavity and analysis of recorded local field potentials showed the ability to record neural signals of biological origin. Significance. The conducted research confirms that it is possible to record neural activity from the inside wall of brain cavities at various anatomical locations after a single implantation procedure. This opens up possibilities towards research of abnormal brain cavities and the clinical conditions associated with them, such as central post-stroke pain.

Development of deep-ultraviolet metal vapor lasers

NASA Astrophysics Data System (ADS)

Sabotinov, Nikola V.

2004-06-01

Deep ultraviolet laser generation is of great interest in connection with both the development of new industrial technologies and applications in medicine, biology, chemistry, etc. The development of metal vapor UV lasers oscillating in the pulsed mode with high pulse repetition frequencies and producing high average output powers is of particular interest for microprocessing of polymers, photolithography and fluorescence applications. At present, metal vapor lasers generate deep-UV radiation on the base of two methods. The first method is non-linear conversion of powerful laser generation from the visible region into the deep ultraviolet region. The second method is direct UV laser action on ion and atomic transitions of different metals.

Achieving pattern uniformity in plasmonic lithography by spatial frequency selection

NASA Astrophysics Data System (ADS)

Liang, Gaofeng; Chen, Xi; Zhao, Qing; Guo, L. Jay

2018-01-01

The effects of the surface roughness of thin films and defects on photomasks are investigated in two representative plasmonic lithography systems: thin silver film-based superlens and multilayer-based hyperbolic metamaterial (HMM). Superlens can replicate arbitrary patterns because of its broad evanescent wave passband, which also makes it inherently vulnerable to the roughness of the thin film and imperfections of the mask. On the other hand, the HMM system has spatial frequency filtering characteristics and its pattern formation is based on interference, producing uniform and stable periodic patterns. In this work, we show that the HMM system is more immune to such imperfections due to its function of spatial frequency selection. The analyses are further verified by an interference lithography system incorporating the photoresist layer as an optical waveguide to improve the aspect ratio of the pattern. It is concluded that a system capable of spatial frequency selection is a powerful method to produce deep-subwavelength periodic patterns with high degree of uniformity and fidelity.

AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, K. X.

2011-05-31

This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

Accurate lithography simulation model based on convolutional neural networks

NASA Astrophysics Data System (ADS)

Watanabe, Yuki; Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki

2017-07-01

Lithography simulation is an essential technique for today's semiconductor manufacturing process. In order to calculate an entire chip in realistic time, compact resist model is commonly used. The model is established for faster calculation. To have accurate compact resist model, it is necessary to fix a complicated non-linear model function. However, it is difficult to decide an appropriate function manually because there are many options. This paper proposes a new compact resist model using CNN (Convolutional Neural Networks) which is one of deep learning techniques. CNN model makes it possible to determine an appropriate model function and achieve accurate simulation. Experimental results show CNN model can reduce CD prediction errors by 70% compared with the conventional model.

450mm wafer patterning with jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

High-density patterned media fabrication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Ramos, Rick; Brooks, Cynthia; Simpson, Logan; Fretwell, John; Carden, Scott; Hellebrekers, Paul; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FIL®) process uses drop dispensing of UV curable resists for high resolution patterning. Several applications, including patterned media, are better, and more economically served by a full substrate patterning process since the alignment requirements are minimal. Patterned media is particularly challenging because of the aggressive feature sizes necessary to achieve storage densities required for manufacturing beyond the current technology of perpendicular recording. In this paper, the key process steps for the application of J-FIL to pattern media fabrication are reviewed with special attention to substrate cleaning, vapor adhesion of the adhesion layer and imprint performance at >300 disk per hour. Also discussed are recent results for imprinting discrete track patterns at half pitches of 24nm and bit patterned media patterns at densities of 1 Tb/in2.

One-step patterning of double tone high contrast and high refractive index inorganic spin-on resist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zanchetta, E.; Della Giustina, G.; Brusatin, G.

2014-09-14

A direct one-step and low temperature micro-fabrication process, enabling to realize large area totally inorganic TiO₂ micro-patterns from a spin-on resist, is presented. High refractive index structures (up to 2 at 632 nm) without the need for transfer processes have been obtained by mask assisted UV lithography, exploiting photocatalytic titania properties. A distinctive feature not shared by any of the known available resists and boosting the material versatility, is that the system behaves either as a positive or as negative tone resist, depending on the process parameters and on the development chemistry. In order to explain the resist double tonemore » behavior, deep comprehension of the lithographic process parameters optimization and of the resist chemistry and structure evolution during the lithographic process, generally uncommon in literature, is reported. Another striking property of the presented resist is that the negative tone shows a high contrast up to 19, allowing to obtain structures resolution down to 2 μm wide. The presented process and material permit to directly fabricate different titania geometries of great importance for solar cells, photo-catalysis, and photonic crystals applications.« less

All-photonic drying and sintering process via flash white light combined with deep-UV and near-infrared irradiation for highly conductive copper nano-ink

PubMed Central

Hwang, Hyun-Jun; Oh, Kyung-Hwan; Kim, Hak-Sung

2016-01-01

We developed an ultra-high speed photonic sintering method involving flash white light (FWL) combined with near infrared (NIR) and deep UV light irradiation to produce highly conductive copper nano-ink film. Flash white light irradiation energy and the power of NIR/deep UV were optimized to obtain high conductivity Cu films. Several microscopic and spectroscopic characterization techniques such as scanning electron microscopy (SEM), a x-ray diffraction (XRD), and Fourier-transform infrared (FT-IR) spectroscopy were employed to characterize the Cu nano-films. Optimally sintered Cu nano-ink films produced using a deep UV-assisted flash white light sintering technique had the lowest resistivity (7.62 μΩ·cm), which was only 4.5-fold higher than that of bulk Cu film (1.68 μΩ•cm). PMID:26806215

All-photonic drying and sintering process via flash white light combined with deep-UV and near-infrared irradiation for highly conductive copper nano-ink.

PubMed

Hwang, Hyun-Jun; Oh, Kyung-Hwan; Kim, Hak-Sung

2016-01-25

We developed an ultra-high speed photonic sintering method involving flash white light (FWL) combined with near infrared (NIR) and deep UV light irradiation to produce highly conductive copper nano-ink film. Flash white light irradiation energy and the power of NIR/deep UV were optimized to obtain high conductivity Cu films. Several microscopic and spectroscopic characterization techniques such as scanning electron microscopy (SEM), a x-ray diffraction (XRD), and Fourier-transform infrared (FT-IR) spectroscopy were employed to characterize the Cu nano-films. Optimally sintered Cu nano-ink films produced using a deep UV-assisted flash white light sintering technique had the lowest resistivity (7.62 μΩ·cm), which was only 4.5-fold higher than that of bulk Cu film (1.68 μΩ•cm).

Simple Multi-level Microchannel Fabrication by Pseudo-Grayscale Backside Diffused Light Lithography.

PubMed

Lai, David; Labuz, Joseph M; Kim, Jiwon; Luker, Gary D; Shikanov, Ariella; Takayama, Shuichi

2013-11-14

Photolithography of multi-level channel features in microfluidics is laborious and/or costly. Grayscale photolithography is mostly used with positive photoresists and conventional front side exposure, but the grayscale masks needed are generally costly and positive photoresists are not commonly used in microfluidic rapid prototyping. Here we introduce a simple and inexpensive alternative that uses pseudo-grayscale (pGS) photomasks in combination with backside diffused light lithography (BDLL) and the commonly used negative photoresist, SU-8. BDLL can produce smooth multi-level channels of gradually changing heights without use of true grayscale masks because of the use of diffused light. Since the exposure is done through a glass slide, the photoresist is cross-linked from the substrate side up enabling well-defined and stable structures to be fabricated from even unspun photoresist layers. In addition to providing unique structures and capabilities, the method is compatible with the "garage microfluidics" concept of creating useful tools at low cost since pGS BDLL can be performed with the use of only hot plates and a UV transilluminator: equipment commonly found in biology labs. Expensive spin coaters or collimated UV aligners are not needed. To demonstrate the applicability of pGS BDLL, a variety of weir-type cell traps were constructed with a single UV exposure to separate cancer cells (MDA-MB-231, 10-15 μm in size) from red blood cells (RBCs, 2-8 μm in size) as well as follicle clusters (40-50 μm in size) from cancer cells (MDA-MB-231, 10-15 μm in size).

Grayscale lithography-automated mask generation for complex three-dimensional topography

NASA Astrophysics Data System (ADS)

Loomis, James; Ratnayake, Dilan; McKenna, Curtis; Walsh, Kevin M.

2016-01-01

Grayscale lithography is a relatively underutilized technique that enables fabrication of three-dimensional (3-D) microstructures in photosensitive polymers (photoresists). By spatially modulating ultraviolet (UV) dosage during the writing process, one can vary the depth at which photoresist is developed. This means complex structures and bioinspired designs can readily be produced that would otherwise be cost prohibitive or too time intensive to fabricate. The main barrier to widespread grayscale implementation, however, stems from the laborious generation of mask files required to create complex surface topography. We present a process and associated software utility for automatically generating grayscale mask files from 3-D models created within industry-standard computer-aided design (CAD) suites. By shifting the microelectromechanical systems (MEMS) design onus to commonly used CAD programs ideal for complex surfacing, engineering professionals already familiar with traditional 3-D CAD software can readily utilize their pre-existing skills to make valuable contributions to the MEMS community. Our conversion process is demonstrated by prototyping several samples on a laser pattern generator-capital equipment already in use in many foundries. Finally, an empirical calibration technique is shown that compensates for nonlinear relationships between UV exposure intensity and photoresist development depth as well as a thermal reflow technique to help smooth microstructure surfaces.

Technical Testing of Deep-UV Solid-State Sources for Fluorescence Lifetime Measurements in the Frequency Domain

DTIC Science & Technology

2007-02-01

fluxes at wavelengths short enough for excitation of fluorescence in basic biological fluorophores and bacterial agents. In particular, deep- UV LEDs ...can be used for excitation of aromatic amino acids, whereas near- UV LEDs are suitable for excitation of autofluorescent coenzymes. The SUVOS AlGaN... LEDs as well as commercial InGaN near- UV LEDs were tested for spectral purity and the possibility of high-frequency modulation up to 200 MHz and

Mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Jones, Chris; Doyle, Gary F.; Brown, Laura; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-11-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer are covered in detail.

Broadband infrared light emitting waveguides based on UV curable PbS quantum dot composites

NASA Astrophysics Data System (ADS)

Shen, Kai; Baig, Sarfaraz; Jiang, Guomin; Paik, Young-hun; Kim, Sung Jin; Wang, Michael R.

2018-02-01

We present herein the active PbS-photopolymer waveguide fabricated by vacuum assisted microfluidic (VAM) soft lithography technique. The PbS Quantum Dots (QDs) were synthesized using colloidal chemistry methods with tunable sizes and emission wavelengths, resulting in efficient light emission around 1000 nm center wavelength. The PbS QDs have demonstrated much better solubility in our newly synthesized UV curable polymer than SU-8 photoresist, verified by Photoluminescence (PL) testing. Through refractive index control, the PbS QDs-polymer core material and polymer cladding material can efficiently confine the infrared emitting light with a broad spectral bandwidth of 180 nm. Both single-mode and multi-mode light emitting waveguides have been realized.

Designs for optimizing depth of focus and spot size for UV laser ablation

NASA Astrophysics Data System (ADS)

Wei, An-Chi; Sze, Jyh-Rou; Chern, Jyh-Long

2010-11-01

The proposed optical systems are designed for extending the depths of foci (DOF) of UV lasers, which can be exploited in the laser-ablation technologies, such as laser machining and lithography. The designed systems are commonly constructed by an optical module that has at least one aspherical surface. Two configurations of optical module, lens-only and lens-reflector, are presented with the designs of 2-lens and 1-lens-1-reflector demonstrated by commercially optical software. Compared with conventional DOF-enhanced systems, which required the chromatic aberration lenses and the light sources with multiple wavelengths, the proposed designs are adapted to the single-wavelength systems, leading to more economical and efficient systems.

Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

PubMed

Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui

2011-08-01

High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.

Immuno-magnetic beads-based extraction-capillary zone electrophoresis-deep UV laser-induced fluorescence analysis of erythropoietin.

PubMed

Wang, Heye; Dou, Peng; Lü, Chenchen; Liu, Zhen

2012-07-13

Erythropoietin (EPO) is an important glycoprotein hormone. Recombinant human EPO (rhEPO) is an important therapeutic drug and can be also used as doping reagent in sports. The analysis of EPO glycoforms in pharmaceutical and sports areas greatly challenges analytical scientists from several aspects, among which sensitive detection and effective and facile sample preparation are two essential issues. Herein, we investigated new possibilities for these two aspects. Deep UV laser-induced fluorescence detection (deep UV-LIF) was established to detect the intrinsic fluorescence of EPO while an immuno-magnetic beads-based extraction (IMBE) was developed to specifically extract EPO glycoforms. Combined with capillary zone electrophoresis (CZE), CZE-deep UV-LIF allows high resolution glycoform profiling with improved sensitivity. The detection sensitivity was improved by one order of magnitude as compared with UV absorbance detection. An additional advantage is that the original glycoform distribution can be completely preserved because no fluorescent labeling is needed. By combining IMBE with CZE-deep UV-LIF, the overall detection sensitivity was 1.5 × 10⁻⁸ mol/L, which was enhanced by two orders of magnitude relative to conventional CZE with UV absorbance detection. It is applicable to the analysis of pharmaceutical preparations of EPO, but the sensitivity is insufficient for the anti-doping analysis of EPO in blood and urine. IMBE can be straightforward and effective approach for sample preparation. However, antibodies with high specificity were the key for application to urine samples because some urinary proteins can severely interfere the immuno-extraction. Copyright © 2012 Elsevier B.V. All rights reserved.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

PubMed Central

Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer

2017-01-01

Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323

Large area and deep sub-wavelength interference lithography employing odd surface plasmon modes.

PubMed

Liu, Liqin; Luo, Yunfei; Zhao, Zeyu; Zhang, Wei; Gao, Guohan; Zeng, Bo; Wang, Changtao; Luo, Xiangang

2016-07-28

In this paper, large area and deep sub-wavelength interference patterns are realized experimentally by using odd surface plasmon modes in the metal/insulator/metal structure. Theoretical investigation shows that the odd modes possesses much higher transversal wave vector and great inhibition of tangential electric field components, facilitating surface plasmon interference fringes with high resolution and contrast in the measure of electric field intensity. Interference resist patterns with 45 nm (∼λ/8) half-pitch, 50 nm depth, and area size up to 20 mm × 20 mm were obtained by using 20 nm Al/50 nm photo resist/50 nm Al films with greatly reduced surface roughness and 180 nm pitch exciting grating fabricated with conventional laser interference lithography. Much deeper resolution down to 19.5 nm is also feasible by decreasing the thickness of PR. Considering that no requirement of expensive EBL or FIB tools are employed, it provides a cost-effective way for large area and nano-scale fabrication.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

NASA Astrophysics Data System (ADS)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

Characterization of sub-0.18-μm critical dimension pattern collapse for yield improvement

NASA Astrophysics Data System (ADS)

Zhong, Tom X.; Gurer, Emir; Lee, Ed C.; Bai, Hong; Gendron, Bill; Krishna, Murthy S.; Reynolds, Reese M.

1999-09-01

In this study, we demonstrate that surface-resist interface interactions are becoming more crucial in DUV lithography as we enter deep into the sub-wavelength era of smaller critical dimension (CD) size and high aspect ratio. This interaction reveals itself as an adhesion reduction of the resist film due to the smaller contact area between the feature and the substrate. Considerable yield improvements in a manufacturing environment can be realized if pattern collapsing of smaller features is prevented by means of proper priming. In addition, next generation photoresist processing equipments must be able to deliver excellent on-wafer results with minimum chemical consumption as environmental health and safety (EHS) requirements are better appreciated in the marketplace. HMDS is not only highly toxic but it is also a prime threat to CD control of most deep ultra violet (DUV) photoresists used for sub-0.18 micrometer design rules. The by-product NH3 created during priming process with HMDS can neutralize the photo-acid created during the exposure step. There are many technical opportunities in this usually neglected priming process step. In this study, we characterized sub-0.18 micrometer isolated line pattern collapse for UV5 resist on bare Si wafers by using a scanning electron microscope (SEM). The smallest line width printability on wafers primed with different contact angles was analyzed by using both top down and cross section SEM images. Our results show that there is a strong effect of substrate surface and film interface interaction on device yields. More specifically, there is a strong correlation between pattern integrity of features down to 115 nm and vapor prime process conditions. In general, wafers with higher contact angle can support smaller line widths. These results suggest that higher contact angle than the current specification will be required for sub-0.1 micrometer design rule for improved yield. An alternative material to HMDS will probably be needed due to more stringent future requirements and weak bonding characteristics of HMDS. Based on the result of this study, we propose an HMDS consumption reduction scheme for line-widths above 0.2 micrometer. There are many priming-related modular and system level technical enhancements that can be designed in the next generation photoresist processing tools in order to extend 248 nm lithography towards smaller feature sizes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Wei, E-mail: wguo2@ncsu.edu; Kirste, Ronny; Bryan, Zachary

Enhanced light extraction efficiency was demonstrated on nanostructure patterned GaN and AlGaN/AlN Multiple-Quantum-Well (MQW) structures using mass production techniques including natural lithography and interference lithography with feature size as small as 100 nm. Periodic nanostructures showed higher light extraction efficiency and modified emission profile compared to non-periodic structures based on integral reflection and angular-resolved transmission measurement. Light extraction mechanism of macroscopic and microscopic nanopatterning is discussed, and the advantage of using periodic nanostructure patterning is provided. An enhanced photoluminescence emission intensity was observed on nanostructure patterned AlGaN/AlN MQW compared to as-grown structure, demonstrating a large-scale and mass-producible pathway to higher lightmore » extraction efficiency in deep-ultra-violet light-emitting diodes.« less

Decal transfer lithography

DOEpatents

Nuzzo, Ralph G.; Childs, William R.; Motala, Michael J.; Lee, Keon Jae

2010-02-16

A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

Wavelength Independent Optical Lithography.

DTIC Science & Technology

1986-06-06

lamp because it has a smooth, broadband output in the visible and near UV. High Density Optical Intormation Storage The NSOM concept can be combined...stringent control can be maintained over the temperature of the entire apparatus. Ideally, both of these methods should be used. - . * S P. .~ V: -:V- TwT ...DNA helixes : enantiomers of tris(4, 7-diphenylpheanthroline)ruthenium (II). Proc. Natl. Acad. Sci. U.S.A. 81, 7 (1984). 27. J.M. Fernandez, E. Neher

Improved sensing using simultaneous deep-UV Raman and fluorescence detection-II

NASA Astrophysics Data System (ADS)

Hug, W. F.; Bhartia, R.; Sijapati, K.; Beegle, L. W.; Reid, R. D.

2014-05-01

Photon Systems in collaboration with JPL is continuing development of a new technology robot-mounted or hand-held sensor for reagentless, short-range, standoff detection and identification of trace levels chemical, biological, and explosive (CBE) materials on surfaces. This deep ultraviolet CBE sensor is the result of Army STTR and DTRA programs. The evolving 10 to 15 lb, 20 W, sensor can discriminate CBE from background clutter materials using a fusion of deep UV excited resonance Raman (RR) and laser induced native fluorescence (LINF) emissions collected is less than 1 ms. RR is a method that provides information about molecular bonds, while LINF spectroscopy is a much more sensitive method that provides information regarding the electronic configuration of target molecules. Standoff excitation of suspicious packages, vehicles, persons, and other objects that may contain hazardous materials is accomplished using excitation in the deep UV where there are four main advantages compared to near-UV, visible or near-IR counterparts. 1) Excited between 220 and 250 nm, Raman emission occur within a fluorescence-free region of the spectrum, eliminating obscuration of weak Raman signals by fluorescence from target or surrounding materials. 2) Because Raman and fluorescence occupy separate spectral regions, detection can be done simultaneously, providing an orthogonal set of information to improve both sensitivity and lower false alarm rates. 3) Rayleigh law and resonance effects increase Raman signal strength and sensitivity of detection. 4) Penetration depth into target in the deep UV is short, providing spatial/spectral separation of a target material from its background or substrate. 5) Detection in the deep UV eliminates ambient light background and enable daylight detection.

Surface plasmon coupling for suppressing p-GaN absorption and TM-polarized emission in a deep-UV light-emitting diode.

PubMed

Kuo, Yang; Su, Chia-Ying; Hsieh, Chieh; Chang, Wen-Yen; Huang, Chu-An; Kiang, Yean-Woei; Yang, C C

2015-09-15

The radiated power enhancement (suppression) of an in- (out-of-) plane-oriented radiating dipole at a desired emission wavelength in the deep-ultraviolet (UV) range when it is coupled with a surface plasmon (SP) resonance mode induced on a nearby Al nanoparticle (NP) is demonstrated. Also, it is found that the enhanced radiated power propagates mainly in the direction from the Al NP toward the dipole. Such SP coupling behaviors can be used for suppressing the transverse-magnetic (TM)-polarized emission, enhancing the transverse-electric-polarized emission, and reducing the UV absorption of the p-GaN layer in an AlGaN-based deep-UV light-emitting diode by embedding a sphere-like Al NP in its p-AlGaN layer.

Side-wall spacer passivated sub-μm Josephson junction fabrication process

NASA Astrophysics Data System (ADS)

Grönberg, Leif; Kiviranta, Mikko; Vesterinen, Visa; Lehtinen, Janne; Simbierowicz, Slawomir; Luomahaara, Juho; Prunnila, Mika; Hassel, Juha

2017-12-01

We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a sidewall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1-3.0 kA cm-2. We discuss the applicability of the junction process in the context of different applications, such as SQUID magnetometers and Josephson parametric amplifiers.

SHERLOC on Mars 2020

NASA Astrophysics Data System (ADS)

Beegle, L. W.; Bhartia, R.; DeFlores, L. P.; Abbey, W.; Asher, S. A.; Burton, A. S.; Fries, M.; Conrad, P. G.; Clegg, S. M.; Wiens, R. C.; Edgett, K. S.; Ehlmann, B. L.; Nealson, K. H.; Minitti, M. E.; Popp, J.; Langenhorst, F.; Sobron, P.; Steele, A.; Williford, K. H.; Yingst, R. A.

2017-12-01

The Scanning Habitable Environments with Raman & Luminescence for Organics & Chemicals (SHERLOC) investigation is part of the Mars 2020 integrated payload. SHERLOC enables non-contact, spatially resolved, and highly sensitivity detection and characterization of organics and minerals in the Martian surface and near subsurface. SHERLOC is an arm-mounted, Deep UV (DUV) resonance Raman and fluorescence spectrometer utilizing a 248.6-nm DUV laser. Deep UV induced native fluorescence is very sensitive to condensed carbon and aromatic organics, enabling detection at or below 10-6 w/w (1 ppm) at <100 µm spatial scales. SHERLOC's deep UV resonance Raman enables detection and classification of aromatic and aliphatic organics with sensitivities of 10-2 to below 10-4 w/w. In addition to organics, the deep UV Raman enables detection and classification of minerals relevant to aqueous chemistry with grain sizes below 20 µm. SHERLOC will be able to map the distribution of organic material with respect to visible features and minerals that are identifiable with the Raman spectrometer. These maps will enable analysis of the distribution of organics with minerals.

Fabrication of hierarchical micro-nanotopographies for cell attachment studies.

PubMed

López-Bosque, M J; Tejeda-Montes, E; Cazorla, M; Linacero, J; Atienza, Y; Smith, K H; Lladó, A; Colombelli, J; Engel, E; Mata, A

2013-06-28

We report on the development of micro/nanofabrication processes to create hierarchical surface topographies that expand from 50 nm to microns in size on different materials. Three different approaches (named FIB1, FIB2, and EBL) that combine a variety of techniques such as photolithography, reactive ion etching, focused ion beam lithography, electron beam lithography, and soft lithography were developed, each one providing different advantages and disadvantages. The EBL approach was employed to fabricate substrates comprising channels with features between 200 nm and 10 μm in size on polymethylmethacrylate (PMMA), which were then used to investigate the independent or competitive effects of micro- and nanotopographies on cell adhesion and morphology. Rat mesenchymal stem cells (rMSCs) were cultured on four different substrates including 10 μm wide and 500 nm deep channels separated by 10 μm distances (MICRO), 200 nm wide and 100 nm deep nanochannels separated by 200 nm distances (NANO), their combination in parallel (PARAL), and in a perpendicular direction (PERP). Rat MSCs behaved differently on all tested substrates with a high degree of alignment (as measured by both number of aligned cells and average angle) on both NANO and MICRO. Furthermore, cells exhibited the highest level of alignment on PARAL, suggesting a synergetic effect of the two scales of topographies. On the other hand, cells on PERP exhibited the lowest alignment and a consistent change in morphology over time that seemed to be the result of interactions with both micro- and nanochannels positioned in the perpendicular direction, also suggesting a competitive effect of the topographies.

Plasmonic Lithography Utilizing Epsilon Near Zero Hyperbolic Metamaterial.

PubMed

Chen, Xi; Zhang, Cheng; Yang, Fan; Liang, Gaofeng; Li, Qiaochu; Guo, L Jay

2017-10-24

In this work, a special hyperbolic metamaterial (HMM) metamaterial is investigated for plasmonic lithography of period reduction patterns. It is a type II HMM (ϵ ∥ < 0 and ϵ ⊥ > 0) whose tangential component of the permittivity ϵ ∥ is close to zero. Due to the high anisotropy of the type II epsilon-near-zero (ENZ) HMM, only one plasmonic mode can propagate horizontally with low loss in a waveguide system with ENZ HMM as its core. This work takes the advantage of a type II ENZ HMM composed of aluminum/aluminum oxide films and the associated unusual mode to expose a photoresist layer in a specially designed lithography system. Periodic patterns with a half pitch of 58.3 nm were achieved due to the interference of third-order diffracted light of the grating. The lines were 1/6 of the mask with a period of 700 nm and ∼1/7 of the wavelength of the incident light. Moreover, the theoretical analyses performed are widely applicable to structures made of different materials such as silver as well as systems working at deep ultraviolet wavelengths including 193, 248, and 365 nm.

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Calibration and validation of projection lithography in chemically amplified resist systems using fluorescence imaging

NASA Astrophysics Data System (ADS)

Mason, Michael D.; Ray, Krishanu; Feke, Gilbert D.; Grober, Robert D.; Pohlers, Gerd; Cameron, James F.

2003-05-01

Coumarin 6 (C6), a pH sensitive fluorescent molecule were doped into commercial resist systems to demonstrate a cost-effective fluorescence microscopy technique for detecting latent photoacid images in exposed chemically amplified resist films. The fluorescenec image contrast is optimized by carefully selecting optical filters to match the spectroscopic properties of C6 in the resist matrices. We demonstrate the potential of this technique for two sepcific non-invasive applications. First, a fast, conventient, fluorescence technique is demonstrated for determination of quantum yeidsl of photo-acid generation. Since the Ka of C6 in the 193nm resist system lies wihtin the range of acid concentrations that can be photogenerated, we have used this technique to evaluate the acid generation efficiency of various photo-acid generators (PAGs). The technique is based on doping the resist formulations containing the candidate PAGs with C6, coating one wafer per PAG, patterning the wafer with a dose ramp and spectroscopically imaging the wafers. The fluorescence of each pattern in the dose ramp is measured as a single image and analyzed with the optical titration model. Second, a nondestructive in-line diagnostic technique is developed for the focus calibration and validation of a projection lithography system. Our experimental results show excellent correlation between the fluorescence images and scanning electron microscope analysis of developed features. This technique has successfully been applied in both deep UV resists e.g., Shipley UVIIHS resist and 193 nm resists e.g., Shipley Vema-type resist. This method of focus calibration has also been extended to samples with feature sizes below the diffraction limit where the pitch between adjacent features is on the order of 300 nm. Image capture, data analysis, and focus latitude verification are all computer controlled from a single hardware/software platform. Typical focus calibration curves can be obtained within several minutes.

NanoTopoChip: High-throughput nanotopographical cell instruction.

PubMed

Hulshof, Frits F B; Zhao, Yiping; Vasilevich, Aliaksei; Beijer, Nick R M; de Boer, Meint; Papenburg, Bernke J; van Blitterswijk, Clemens; Stamatialis, Dimitrios; de Boer, Jan

2017-10-15

Surface topography is able to influence cell phenotype in numerous ways and offers opportunities to manipulate cells and tissues. In this work, we develop the Nano-TopoChip and study the cell instructive effects of nanoscale topographies. A combination of deep UV projection lithography and conventional lithography was used to fabricate a library of more than 1200 different defined nanotopographies. To illustrate the cell instructive effects of nanotopography, actin-RFP labeled U2OS osteosarcoma cells were cultured and imaged on the Nano-TopoChip. Automated image analysis shows that of many cell morphological parameters, cell spreading, cell orientation and actin morphology are mostly affected by the nanotopographies. Additionally, by using modeling, the changes of cell morphological parameters could by predicted by several feature shape parameters such as lateral size and spacing. This work overcomes the technological challenges of fabricating high quality defined nanoscale features on unprecedented large surface areas of a material relevant for tissue culture such as PS and the screening system is able to infer nanotopography - cell morphological parameter relationships. Our screening platform provides opportunities to identify and study the effect of nanotopography with beneficial properties for the culture of various cell types. The nanotopography of biomaterial surfaces can be modified to influence adhering cells with the aim to improve the performance of medical implants and tissue culture substrates. However, the necessary knowledge of the underlying mechanisms remains incomplete. One reason for this is the limited availability of high-resolution nanotopographies on relevant biomaterials, suitable to conduct systematic biological studies. The present study shows the fabrication of a library of nano-sized surface topographies with high fidelity. The potential of this library, called the 'NanoTopoChip' is shown in a proof of principle HTS study which demonstrates how cells are affected by nanotopographies. The large dataset, acquired by quantitative high-content imaging, allowed us to use predictive modeling to describe how feature dimensions affect cell morphology. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Simultaneous RGB lasing from a single-chip polymer device.

PubMed

Yamashita, Kenichi; Takeuchi, Nobutaka; Oe, Kunishige; Yanagi, Hisao

2010-07-15

This Letter describes the fabrication and operation of a single-chip white-laser device. The laser device has a multilayered structure consisting of three laser layers. Each laser layer comprises polymer claddings and a waveguide core doped with organic dye. In each laser layer, grating corrugations were fabricated by UV-nanoimprint lithography that act as distributed-feedback cavity structures. Under optical pumping, lasing output with red, green, and blue colors was simultaneously obtained from the sample edge.

Up-conversion in an Er-containing nanocomposite and microlasers based on it

NASA Astrophysics Data System (ADS)

Sobeshchuk, N. O.; Denisyuk, I. Yu.

2017-06-01

The results of an investigation of three-dimensional polymer microcavities doped with inorganic luminescent particles are presented. Microlasers in the form of rectangular parallelepipeds were fabricated based on the SU8 2025 photoresist by means of compact UV lithography. Luminescent particles containing erbium oxide were obtained by low-temperature synthesis of the corresponding chlorides in a nonaqueous medium. The obtained spectra confirm the presence of a narrowband laser radiation exhibiting a Stokes shift.

Microfabrication: LIGA-X and applications

NASA Astrophysics Data System (ADS)

Kupka, R. K.; Bouamrane, F.; Cremers, C.; Megtert, S.

2000-09-01

X-ray LIGA (Lithography, Electrogrowth, Moulding) is one of today's key technologies in microfabrication and upcoming modern (meso)-(nano) fabrication, already used and anticipated for micromechanics (micromotors, microsensors, spinnerets, etc.), micro-optics, micro-hydrodynamics (fluidic devices), microbiology, in medicine, in biology, and in chemistry for microchemical reactors. It compares to micro-electromechanical systems (MEMS) technology, offering a larger, non-silicon choice of materials and better inherent precision. X-ray LIGA relies on synchrotron radiation to obtain necessary X-ray fluxes and uses X-ray proximity printing. Inherent advantages are its extreme precision, depth of field and very low intrinsic surface roughness. However, the quality of fabricated structures often depends on secondary effects during exposure and effects like resist adhesion. UV-LIGA, relying on thick UV resists is an alternative for projects requiring less precision. Modulating the spectral properties of synchrotron radiation, different regimes of X-ray lithography lead to (a) the mass-fabrication of classical nanostructures, (b) the fabrication of high aspect ratio nanostructures (HARNST), (c) the fabrication of high aspect ratio microstructures (HARMST), and (d) the fabrication of high aspect ratio centimeter structures (HARCST). Reviewing very recent activities around X-ray LIGA, we show the versatility of the method, obviously finding its region of application there, where it is best and other competing microtechnologies are less advantageous. An example of surface-based X-ray and particle lenses (orthogonal reflection optics (ORO)) made by X-ray LIGA is given.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Irving, J. W.; Lu, Xiaoming; Zhang, Wei; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2013-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. In previous studies, we have focused on defects such as random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. In this work, we attempted to identify the critical imprint defect types using a mask with NAND Flash-like patterns at dimensions as small as 26nm. The two key defect types identified were line break defects induced by small particulates and airborne contaminants which result in local adhesion failure. After identification, the root cause of the defect was determined, and corrective measures were taken to either eliminate or reduce the defect source. As a result, we have been able to reduce defectivity levels by more than three orders of magnitude in only 12 months and are now achieving defectivity adders as small as 2 adders per lot of wafers.

A review of nanoimprint lithography for high-volume semiconductor device manufacturing

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Choi, Jin

2017-06-01

Imprint lithography has been shown to be a promising technique for the replication of nanoscale features. Jet and flash imprint lithography (J-FIL) [jet and flash imprint lithography and J-FIL are trademarks of Molecular Imprints, Inc.] involves the field-by-field deposition and exposure of a low-viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid, which then quickly flows into the relief patterns in the mask by capillary action. After this filling step, the resist is cross-linked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Included on the list are overlay, throughput, and defectivity. The most demanding devices now require an overlay of better than 4 nm, 3σ. Throughput for an imprint tool is generally targeted at 80 wafers/h. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. The purpose of this paper is to report the status of throughput and defectivity work and to describe the progress made in addressing overlay for advanced devices. To address high-order corrections, a high-order distortion correction (HODC) system is introduced. The combination of applying magnification actuation to the mask and temperature correction to the wafer is described in detail. Examples are presented for the correction of K7, K11, and K17 distortions as well as distortions on actual device wafers.

Lithographic microfabrication of biocompatible polymers for tissue engineering and lab-on-a-chip applications

NASA Astrophysics Data System (ADS)

Balciunas, Evaldas; Jonusauskas, Linas; Valuckas, Vytautas; Baltriukiene, Daiva; Bukelskiene, Virginija; Gadonas, Roaldas; Malinauskas, Mangirdas

2012-06-01

In this work, a combination of Direct Laser Writing (DLW), PoliDiMethylSiloxane (PDMS) soft lithography and UV lithography was used to create cm- scale microstructured polymer scaolds for cell culture experiments out of dierent biocompatible materials: novel hybrid organic-inorganic SZ2080, PDMS elastomer, biodegradable PEG- DA-258 and SU-8. Rabbit muscle-derived stem cells were seeded on the fabricated dierent periodicity scaolds to evaluate if the relief surface had any eect on cell proliferation. An array of microlenses was fabricated using DLW out of SZ2080 and replicated in PDMS and PEG-DA-258, showing good potential applicability of the used techniques in many other elds like micro- and nano- uidics, photonics, and MicroElectroMechanical Systems (MEMS). The synergetic employment of three dierent fabrication techniques allowed to produce desired objects with low cost, high throughput and precision as well as use materials that are dicult to process by other means (PDMS and PEG-DA-258). DLW is a relatively slow fabrication method, since the object has to be written point-by-point. By applying PDMS soft lithography, we were enabled to replicate laser-fabricated scaolds for stem cell growth and micro-optical elements for lab-on-a-chip applications with high speed, low cost and good reproducible quality.

Optical inspection of NGL masks

NASA Astrophysics Data System (ADS)

Pettibone, Donald W.; Stokowski, Stanley E.

2004-12-01

For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Selection of UV Resins for Nanostructured Molds for Thermal-NIL.

PubMed

Jia, Zheng; Choi, Junseo; Park, Sunggook

2018-06-18

Nanoimprint molds made of soft polymeric materials have advantages of low demolding force and low fabrication cost over Si or metal-based hard molds. However, such advantages are often sacrificed by their reduced replication fidelity associated with the low mechanical strength. In this paper, we studied replication fidelity of different UV-resin molds copied from a Si master mold via UV nanoimprint lithography (NIL) and their thermal imprinting performance into a thermoplastic polymer. Four different UV resins were studied: two were high surface energy UV resins based on tripropyleneglycol diacrylate (TPGDA resin) and polypropyleneglycol diacrylate (PPGDA resin), and the other two were commercially available, low surface energy poly-urethane acrylate (PUA resin) and fluorine-containing (MD 700) UV resins. The replication fidelity among the four UV-resins during UV nanoimprint lithograph from a Si master with sharp nanostructures was in the increasing order of (poorest) PUA resin < MD 700 < PPGDA resin < TPGDA resin (best). The results show that the high surface energy and small monomer size are keys to achieving good UV resin filling into sharp nanostructures over the viscosity of the resin solution. When the four UV-resin molds were used for thermal-NIL into a thermoplastic polymer, the replication fidelity was in the increasing order of (poorest) MD 700 < TPGDA resin < PUA resin (best), which follows the same order of their Young's moduli. Our results indicate that the selection of an appropriate UV resin for NIL molds requires consideration of the replication fidelities in the mold fabrication and the subsequent thermal-NIL into thermoplastic polymers. © 2018 IOP Publishing Ltd.

LED deep UV source for charge management of gravitational reference sensors

NASA Astrophysics Data System (ADS)

Sun, Ke-Xun; Allard, Brett; Buchman, Saps; Williams, Scott; Byer, Robert L.

2006-04-01

Proof mass electrical charge management is an important functionality for the ST-7-LTP technology demonstration flight and for LISA. Photoemission for charge control is accomplished by using deep ultraviolet (UV) light to excite photoelectron emission from an Au alloy. The conventional UV source is a mercury vapour lamp. We propose and demonstrate charge management using a deep UV light emitting diode (LED) source. We have acquired selected AlGaN UV LEDs, characterized their performance and successfully used them to realize charge management. The UV LEDs emit at a 257 nm central wavelength with a bandwidth of ~12 nm. The UV power for a free-space LED is ~120 µW, and after fibre coupling is ~16 µW, more than sufficient for LISA applications. We have directly observed the LED UV light-induced photocurrent response from an Au photocathode and an Au-coated GRS/ST-7 proof mass. We demonstrated fast switching of UV LEDs and associated fast changes in photocurrent. This allows modulation and continuous discharge to meet stringent LISA disturbance reduction requirements. We propose and demonstrate AC charge management outside the gravitational wave signal band. Further, the megahertz bandwidth for UV LED switching allows for up to six orders of magnitude dynamic power range and a number of novel modes of operations. The UV LED based charge management system offers the advantages of small-size, lightweight, fibre-coupled operation with very low power consumption. Presented at 'Amaldi6', Poster 73, Space Detector, 6th Edoardo Almadi Conference on Gravitational Waves, 20-24 June 2005.

Deep-UV Emitters and Detectors Based on Lattice-Matched Cubic Oxide Semiconductors (4.2 Optoelectronics)

DTIC Science & Technology

2015-05-14

calculated   by   dividing   photo-­‐‑ generated  current  by  the  optical  power  spectrum  of  the   lamp .    A   UV ...the optimized parameters for growth. Efforts led to significant increases in solar?blind detector responsivity (up to 0.1 A/W) with sub-­ nanoamp...Aug-2014 Approved for Public Release; Distribution Unlimited Final Report: Deep- UV Emitters and Detectors Based on Lattice- Matched Cubic Oxide

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.

PubMed

Ryu, Han-Youl

2014-02-04

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS: 41.20.Jb; 42.72.Bj; 85.60.Jb.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

PubMed Central

2014-01-01

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS 41.20.Jb; 42.72.Bj; 85.60.Jb PMID:24495598

White organic light-emitting diodes utilized by near UV-deep blue emitter and exciplex emission.

PubMed

Park, Young Wook; Kim, Young Min; Choi, Jin Hwan; Park, Tae Hyun; Choi, Hyun Ju; Yu, Hong Jung; Cho, Min Ju; Choi, Dong Hoon; Kim, Sung Hyun; Ju, Byeong Kwon

2011-02-01

Numerous investigations have been made into the development of wide color gamut displays for deep-blue OLEDs, including the RGB sub pixels, and white OLEDs (WOLEDs). One of the well known deep-blue emissive dopants, tris(phenyl-methyl-benzimidazolyl)iridium(III) [Ir(pmb)3], successfully introduced its fascinating color coordinate of Commission Internationale de l'Eclairage (CIE) 1931 (0.17, 0.06), however there have been no reports utilizing its accomplishments as WOLEDs. In this report, using only one phosphorescent dopant, the near UV-deep blue emissive Ir(pmb)3, the WOLEDs having the CIE 1931 coordinate of (0.33, 0.38) at 100 cd/m2 with a color rendering index of 85 are demonstrated. The white emission of the fabricated OLEDs are oriented from the near UV-deep blue emission of Ir(pmb)3 and the successfully controlled exciplex emission, between the Ir(pmb)3-host, and the Ir(pmb)3-interfaced material.

Efficient room temperature hydrogen sensor based on UV-activated ZnO nano-network

NASA Astrophysics Data System (ADS)

Kumar, Mohit; Kumar, Rahul; Rajamani, Saravanan; Ranwa, Sapana; Fanetti, Mattia; Valant, Matjaz; Kumar, Mahesh

2017-09-01

Room temperature hydrogen sensors were fabricated from Au embedded ZnO nano-networks using a 30 mW GaN ultraviolet LED. The Au-decorated ZnO nano-networks were deposited on a SiO2/Si substrate by a chemical vapour deposition process. X-ray diffraction (XRD) spectrum analysis revealed a hexagonal wurtzite structure of ZnO and presence of Au. The ZnO nanoparticles were interconnected, forming nano-network structures. Au nanoparticles were uniformly distributed on ZnO surfaces, as confirmed by FESEM imaging. Interdigitated electrodes (IDEs) were fabricated on the ZnO nano-networks using optical lithography. Sensor performances were measured with and without UV illumination, at room temperate, with concentrations of hydrogen varying from 5 ppm to 1%. The sensor response was found to be ˜21.5% under UV illumination and 0% without UV at room temperature for low hydrogen concentration of 5 ppm. The UV-photoactivated mode enhanced the adsorption of photo-induced O- and O2- ions, and the d-band electron transition from the Au nanoparticles to ZnO—which increased the chemisorbed reaction between hydrogen and oxygen. The sensor response was also measured at 150 °C (without UV illumination) and found to be ˜18% at 5 ppm. Energy efficient low cost hydrogen sensors can be designed and fabricated with the combination of GaN UV LEDs and ZnO nanostructures.

A novel method to fabricate silicon tubular gratings with broadband antireflection and super-hydrophobicity.

PubMed

Gao, Yang; Shi, Tielin; Tan, Xianhua; Liao, Guanglan

2014-06-01

We have developed a novel method to fabricate micro/nano structure based on the coherent diffraction lithography, and acquired periodic silicon tubular gratings with deep nano-scale tapered profiles at the top part. The optical properties of these tubular gratings were similar to an effective gradient-index antireflective surface, resulting in a broadband antireflective combining super-hydrophobic behavior. The mechanism of the method was simulated by rigorous coupled wave analysis algorithms. Then coherent diffraction lithography by use of suitable mask, in which periodic micro-scale circular opaque patters were distributed, was realized on the traditional aligner. Due to coherent diffraction, we obtained enough light intensity for photoresist exposure under the center of the opaque area in the mask together with transparent areas. The tapered line profiles and hollow photoresist gratings over large areas could be fabricated on the silicon wafer after development. The dry etching process was carried out, and high aspect ratio silicon tubular gratings with deep tapered profiles at the top were fabricated. The optical property and wettability of the structure were verified, proving that the proposed method and obtained micro/nano structure provide application potential in the future.

Fabrication of self-expandable NiTi thin film devices with micro-electrode array for bioelectric sensing, stimulation and ablation.

PubMed

Bechtold, Christoph; de Miranda, Rodrigo Lima; Chluba, Christoph; Quandt, Eckhard

2016-12-01

Self-expandable medical devices provide mechanical functionality at a specific location of the human body and are viable for minimal invasive procedures. Besides radiopaque markers and drug-eluting coatings, next generation self-expandable devices can be equipped with additional functionality, such as conductive and flexible electrodes, which enables chronic recording of bioelectrical signals, stimulating or ablating tissue. This promises new therapeutic options in various medical fields, among them in particular neuromodulation (e.g. deep brain stimulation), BioMEMS, radio frequency ablation, mapping or denervation. However, the fabrication of such multi-functional devices is challenging. For this study we have realized a 35 μm thick, superelastic NiTi thin film stent structure with six isolated electrodes on the outer circumference, each electrode connected to a contact pad at the end of the stent structure, using magnetron sputtering, UV lithography and wet chemical etching. Mechanical and electrical properties of the device during typical loading conditions, i.e. crimping, simulated pulsatile and electrochemical testing, were characterized and reveal promising results. For the fabrication of future multifunctional, minimal invasive medical devices, such as electroceuticals or other intelligent implants, NiTi thin film technology is therefore a versatile alternative to conventional fabrication routes.

Design and Analysis of an Optical Interface Message Processor

DTIC Science & Technology

1993-03-01

Device 16 2.2.15 Microchannel Spatial Light Modulator (MSLM) 16 2.2.16 Si/PLST Modulator 16 2.2.17 Deformable Mirror Device ( DMD ) 17 2.2.18 Charged...wavelength of UV light, ’n this process, is the minimum image which can be developed. X-Ray lithography wil’ reduce the image size to the 1000 Angstrom...resonance of laser wavelength. This is due to a change in the index of refraction which results in an optical path allowing constructive interference

Deep X-ray and UV Surveys of Galaxies with Chandra, XMM-Newton, and GALEX

NASA Technical Reports Server (NTRS)

Hornschemeier, Ann

2006-01-01

Only with the deepest Chandra surveys has X-ray emission from normal and star forming galaxies (as opposed to AGN, which dominate the X-ray sky) been accessible at cosmologically interesting distances. The X-ray emission from accreting binaries provide a critical glimpse into the binary phase of stellar evolution and studies of the hot gas reservoir constrain past star formation. UV studies provide important, sensitive diagnostics of the young star forming populations and provide the most mature means for studying galaxies at 2 < zeta < 4. This talk will review current progress on studying X-ray emission in concert with UV emission from normal/star-forming galaxies at higher redshift. We will also report on our new, deep surveys with GALEX and XMM-Newton in the nearby Coma cluster. These studies are relevant to DEEP06 as Coma is the nearest rich cluster of galaxies and provides an important benchmark for high-redshift studies in the X-ray and UV wavebands. The 30 ks GALEX (note: similar depth to the GALEX Deep Imaging Survey) and the 110 ks XMM observations provide extremely deep coverage of a Coma outskirts field, allowing the construction of the UV and X-ray luminosity function of galaxies and important constraints on star formation scaling relations such as the X-ray-Star Formation Rate correlation and the X-ray/Stellar Mass correlation. We will discuss what we learn from these deep observations of Coma, including the recently established suppression of the X-ray emission from galaxies in the Coma outskirts that is likely associated with lower levels of past star formation and/or the results of tidal gas stripping.

Local surface plasmon enhanced polarization and internal quantum efficiency of deep ultraviolet emissions from AlGaN-based quantum wells.

PubMed

Zhang, Cai; Tang, Ning; Shang, Liangliang; Fu, Lei; Wang, Weiying; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo

2017-05-24

We report the enhancement of the polarization and internal quantum efficiency (IQE) of deep-UV LEDs by evaporating Al nanoparticles on the device surface to induce localized surface plasmons (LSPs). The deep-UV LEDs polarization is improved due to part of TM emission turns into TE emission through LSPs coupling. The significantly enhanced IQE is attributed to LSPs coupling, which suppress the participation of delocalized and dissociated excitons to non-radiative recombination process.

Ultraviolet Raman Wide-Field Hyperspectral Imaging Spectrometer for Standoff Trace Explosive Detection.

PubMed

Hufziger, Kyle T; Bykov, Sergei V; Asher, Sanford A

2017-02-01

We constructed the first deep ultraviolet (UV) Raman standoff wide-field imaging spectrometer. Our novel deep UV imaging spectrometer utilizes a photonic crystal to select Raman spectral regions for detection. The photonic crystal is composed of highly charged, monodisperse 35.5 ± 2.9 nm silica nanoparticles that self-assemble in solution to produce a face centered cubic crystalline colloidal array that Bragg diffracts a narrow ∼1.0 nm full width at half-maximum (FWHM) UV spectral region. We utilize this photonic crystal to select and image two different spectral regions containing resonance Raman bands of pentaerythritol tetranitrate (PETN) and NH 4 NO 3 (AN). These two deep UV Raman spectral regions diffracted were selected by angle tuning the photonic crystal. We utilized this imaging spectrometer to measure 229 nm excited UV Raman images containing ∼10-1000 µg/cm 2 samples of solid PETN and AN on aluminum surfaces at 2.3 m standoff distances. We estimate detection limits of ∼1 µg/cm 2 for PETN and AN films under these experimental conditions.

2D mesoscale colloidal crystal patterns on polymer substrates

NASA Astrophysics Data System (ADS)

Bredikhin, Vladimir; Bityurin, Nikita

2018-05-01

The development of nanosphere lithography relies on the ability of depositing 2D colloidal crystals comprising micro- and nano-size elements on substrates of different materials. One of the most difficult problems here is deposition of coatings on hydrophobic substrates, e.g. polymers, from aqueous colloidal solutions. We use UV photooxidation for substrate hydrophilization. We demonstrate a new method of producing a two-dimensional ordered array of polymer microparticles (polystyrene microspheres ∼1 μm in diameter) on a polymer substrate (PMMA). We show that implementation of the new deposition technique for directed self-assembly of microspheres on an UV irradiated surface provides an opportunity to obtain coatings on a hydrophilized PMMA surface of large area (∼5 cm2). UV irradiation of the surface through masks allows creating 2D patterns consisting of mesoscale elements formed by the deposited self-assembled microparticles owing to the fact that the colloidal particles are deposited only on the irradiated area leaving the non-irradiated sections intact.

An oxygen-insensitive degradable resist for fabricating metallic patterns on highly curved surfaces by UV-nanoimprint lithography.

PubMed

Hu, Xin; Huang, Shisong; Gu, Ronghua; Yuan, Changsheng; Ge, Haixiong; Chen, Yanfeng

2014-10-01

In this paper, an oxygen-insensitive degradable resist for UV-nanoimprint is designed, com-prising a polycyclic degradable acrylate monomer, 2,10-diacryloyloxymethyl-1,4,9,12-tetraoxa-spiro [4.2.4.2] tetradecane (DAMTT), and a multifunctional thiol monomer pentaerythritol tetra(3-mercaptopropionate) (PETMP). The resist can be quickly UV-cured in the air atmosphere and achieve a high monomer conversion of over 98%, which greatly reduce the adhesion force between the resist and the soft mold. High conversion, in company with an adequate Young's modulus (about 1 GPa) and an extremely low shrinkage (1.34%), promises high nanoimprint resolution of sub-50 nm. The cross-linked resist is able to break into linear molecules in a hot acid solvent. As a result, metallic patterns are fabricated on highly curved surfaces via the lift off process without the assistance of a thermoplastic polymer layer. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

Characterising and testing deep UV LEDs for use in space applications

NASA Astrophysics Data System (ADS)

Hollington, D.; Baird, J. T.; Sumner, T. J.; Wass, P. J.

2015-12-01

Deep ultraviolet (DUV) light sources are used to neutralise isolated test masses in highly sensitive space-based gravitational experiments. An example is the LISA Pathfinder charge management system, which uses low-pressure mercury lamps. A future gravitational-wave observatory such as eLISA will use UV light-emitting diodes (UV LEDs), which offer numerous advantages over traditional discharge lamps. Such devices have limited space heritage but are now available from a number of commercial suppliers. Here we report on a test campaign that was carried out to quantify the general properties of three types of commercially available UV LEDs and demonstrate their suitability for use in space. Testing included general electrical and UV output power measurements, spectral stability, pulsed performance and temperature dependence, as well as thermal vacuum, radiation and vibration survivability.

First 65nm tape-out using inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Hung, Chi-Yuan; Zhang, Bin; Tang, Deming; Guo, Eric; Pang, Linyong; Liu, Yong; Moore, Andrew; Wang, Kechang

2005-11-01

This paper presents SMIC's first 65nm tape out results, in particularly, using ILT. ILT mathematically determines the mask features that produce the desired on-wafer results with best wafer pattern fidelity, largest process window or both. SMIC applied it to its first 65nm tape-out to study ILT performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first test case, because SRAM bit-cells contain features which are challenging lithographically. Mask patterns generated from both conventional OPC and ILT were placed on the mask side-by-side. Mask manufacturability (including fracturing, writing time, inspection, and metrology) and wafer print performance of ILT were studied. The results demonstrated that ILT achieved better CD accuracy, produced substantially larger process window than conventional OPC, and met SMIC's 65nm process window requirements.

Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS

NASA Astrophysics Data System (ADS)

Syms, Richard R. A.; Liu, Dixi; Ahmad, Munir M.

2017-07-01

Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young’s moduli and effective Poisson’s ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson’s ratio are verified and failure patterns are described.

EXTATIC: ASML's α-tool development for EUVL

NASA Astrophysics Data System (ADS)

Meiling, Hans; Benschop, Jos P.; Hartman, Robert A.; Kuerz, Peter; Hoghoj, Peter; Geyl, Roland; Harned, Noreen

2002-07-01

Within the recently initiated EXTATIC project a complete full-field lithography exposure tool for he 50-nm technology node is being developed. The goal is to demonstrate the feasibility of extreme UV lithography (EUVL) for 50-nm imaging and to reduce technological risks in the development of EUVL production tools. We describe the EUV MEDEA+) framework in which EXTATIC is executed, and give an update on the status of the (alpha) -tool development. A brief summary of our in-house source-collector module development is given, as well as the general vacuum architecture of the (alpha) -tool is discussed. We discuss defect-free reticle handling, and investigated the uses of V-grooved brackets glued to the side of the reticle to reduce particle generation during takeovers. These takeovers do not only occur in the exposure tool, but also in multilayer deposition equipment, e-beam pattern writers, inspection tools, etc., where similar requirements on particle contamination are present. Finally, we present an update of mirror fabrication technology and show improved mirror figuring and finishing results.

Tilted pillar array fabrication by the combination of proton beam writing and soft lithography for microfluidic cell capture: Part 1 Design and feasibility.

PubMed

Rajta, Istvan; Huszánk, Robert; Szabó, Atilla T T; Nagy, Gyula U L; Szilasi, Szabolcs; Fürjes, Peter; Holczer, Eszter; Fekete, Zoltan; Járvás, Gabor; Szigeti, Marton; Hajba, Laszlo; Bodnár, Judit; Guttman, Andras

2016-02-01

Design, fabrication, integration, and feasibility test results of a novel microfluidic cell capture device is presented, exploiting the advantages of proton beam writing to make lithographic irradiations under multiple target tilting angles and UV lithography to easily reproduce large area structures. A cell capture device is demonstrated with a unique doubly tilted micropillar array design for cell manipulation in microfluidic applications. Tilting the pillars increased their functional surface, therefore, enhanced fluidic interaction when special bioaffinity coating was used, and improved fluid dynamic behavior regarding cell culture injection. The proposed microstructures were capable to support adequate distribution of body fluids, such as blood, spinal fluid, etc., between the inlet and outlet of the microfluidic sample reservoirs, offering advanced cell capture capability on the functionalized surfaces. The hydrodynamic characteristics of the microfluidic systems were tested with yeast cells (similar size as red blood cells) for efficient capture. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extreme-UV lithography condenser

DOEpatents

Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

2001-01-01

Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

Patterning and photoluminescent properties of perovskite-type organic/inorganic hybrid luminescent films by soft lithography

NASA Astrophysics Data System (ADS)

Cheng, Z. Y.; Wang, Z.; Xing, R. B.; Han, Y. C.; Lin, J.

2003-07-01

Perovskite-type organic/inorganic hybrid layered compound (C 6H 5C 2H 4NH 3) 2PbI 4 was synthesized. The patterning of (C 6H 5C 2H 4NH 3) 2PbI 4 thin films on silicon substrate was realized by the micromolding in capillaries (MIMIC) process, a kind of soft lithography. Bright green luminescent stripes with different widths (50, 15, 0.8 μm) have been obtained. The structure and optical properties of (C 6H 5C 2H 4NH 3) 2PbI 4 films were characterized by X-ray diffraction (XRD), UV/Vis absorption and photoluminescence excitation and emission spectra, respectively. It is shown that the organic-inorganic layered (C 6H 5C 2H 4NH 3) 2PbI 4 film was c-axis oriented, paralleling to the substrate plane. Green exciton emission at 525 nm was observed in the film, and the explanations for it were given.

Soft Nanoimprint Lithography for Direct Printing of Crystalline Metal Oxide Nanostructures

NASA Astrophysics Data System (ADS)

Kothari, Rohit; Beaulieu, Michael; Watkins, James

2015-03-01

We demonstrate a solution-based soft nanoimprint lithography technique to directly print dimensionally-stable crystalline metal oxide nanostructures. A patterned PDMS stamp is used in combination with a UV/thermal cure step to imprint a resist containing high concentrations of crystalline nanoparticles in an inorganic/organic binder phase. The as-imprinted nanostructures are highly crystalline and therefore undergo little shrinkage (less than 5% in some cases) upon thermal annealing. High aspect ratio nanostructures and sub-100 nm features are easily realized. Residual layer free direct imprinting (no etching) was achieved by choosing the resist with the appropriate surface energy to ensure dewetting at stamp-substrate interface. The technique was further extended to stack the nanostructures by deploying a layer-by-layer imprint strategy. The method is scalable and can produce large area device quality nanostructures in a rapid fashion at a low cost. CeO2, ITO and TiO2 nanopatterns are illustrated for their potential use in fuel cell electrodes, solar cell electrodes and photonic devices, respectively.

Weak interfaces for UV cure nanoimprint lithography

NASA Astrophysics Data System (ADS)

Houle, Frances; Fornof, Ann; Simonyi, Eva; Miller, Dolores; Truong, Hoa

2008-03-01

Nanoimprint lithography using a photocurable organic resist provides a means of patterning substrates with a spatial resolution in the few nm range. The usefulness of the technique is limited by defect generation during template removal, which involves fracture at the interface between the template and the newly cured polymer. Although it is critical to have the lowest possible interfacial fracture toughness (Gc less than 0.1 Jm-2) to avoid cohesive failure in the polymer, there is little understanding on how to achieve this using reacting low viscosity resist fluids. Studies of debonding of a series of free-radical cured polyhedral silsesquioxane crosslinker formulations containing selected reactive diluents from fluorosilane-coated quartz template materials will be described. At constant diluent fraction the storage modulus of cured resists follows trends in initial reaction rate, not diluent Tg. Adhesion is uncorrelated with both Tg and storage modulus. XPS studies of near-interface compositions indicate that component segregation within the resist fluid on contact with the template, prior to cure, plays a significant role in controlling the fracture process.

Wrinkling Non-Spherical Particles and Its Application in Cell Attachment Promotion

NASA Astrophysics Data System (ADS)

Li, Minggan; Joung, Dehi; Hughes, Bethany; Waldman, Stephen D.; Kozinski, Janusz A.; Hwang, Dae Kun

2016-07-01

Surface wrinkled particles are ubiquitous in nature and present in different sizes and shapes, such as plant pollens and peppercorn seeds. These natural wrinkles provide the particles with advanced functions to survive and thrive in nature. In this work, by combining flow lithography and plasma treatment, we have developed a simple method that can rapidly create wrinkled non-spherical particles, mimicking the surface textures in nature. Due to the oxygen inhibition in flow lithography, the non-spherical particles synthesized in a microfluidic channel are covered by a partially cured polymer (PCP) layer. When exposed to plasma treatment, this PCP layer rapidly buckles, forming surface-wrinkled particles. We designed and fabricated various particles with desired shapes and sizes. The surfaces of these shapes were tuned to created wrinkle morphologies by controlling UV exposure time and the washing process. We further demonstrated that wrinkles on the particles significantly promoted cell attachment without any chemical modification, potentially providing a new route for cell attachment for various biomedical applications.

High Quality 3D Photonics using Nano Imprint Lithography of Fast Sol-gel Materials.

PubMed

Bar-On, Ofer; Brenner, Philipp; Siegle, Tobias; Gvishi, Raz; Kalt, Heinz; Lemmer, Uli; Scheuer, Jacob

2018-05-18

A method for the realization of low-loss integrated optical components is proposed and demonstrated. This approach is simple, fast, inexpensive, scalable for mass production, and compatible with both 2D and 3D geometries. The process is based on a novel dual-step soft nano imprint lithography process for producing devices with smooth surfaces, combined with fast sol-gel technology providing highly transparent materials. As a concrete example, this approach is demonstrated on a micro ring resonator made by direct laser writing (DLW) to achieve a quality factor improvement from one hundred thousand to more than 3 million. To the best of our knowledge this also sets a Q-factor record for UV-curable integrated micro-ring resonators. The process supports the integration of many types of materials such as light-emitting, electro-optic, piezo-electric, and can be readily applied to a wide variety of devices such as waveguides, lenses, diffractive elements and more.

Universal liquid-phase laser fabrication of various nano-metals encapsulated by ultrathin carbon shells for deep-UV plasmonics.

PubMed

Yu, Miao; Yang, Chao; Li, Xiao-Ming; Lei, Tian-Yu; Sun, Hao-Xuan; Dai, Li-Ping; Gu, Yu; Ning, Xue; Zhou, Ting; Wang, Chao; Zeng, Hai-Bo; Xiong, Jie

2017-06-29

The exploration of localized surface plasmon resonance (LSPR) beyond the usual visible waveband, for example within the ultraviolet (UV) or deep-ultraviolet (D-UV) regions, is of great significance due to its unique applications in secret communications and optics. However, it is still challenging to universally synthesize the corresponding metal nanostructures due to their high activity. Herein, we report a universal, eco-friendly, facile and rapid synthesis of various nano-metals encapsulated by ultrathin carbon shells, significantly with a remarkable deep-UV LSPR characteristic, via a liquid-phase laser fabrication method. Firstly, a new generation of the laser ablation in liquid (LAL) method has been developed with an emphasis on the elaborate selection of solvents to generate ultrathin carbon shells, and hence to stabilize the formed metal nanocrystals. As a result, a series of metal@carbon nanoparticles (NPs), including Cr@C, Ti@C, Fe@C, V@C, Al@C, Sn@C, Mn@C and Pd@C, can be fabricated by this modified LAL method. Interestingly, these NPs exhibit LSPR peaks in the range of 200-330 nm, which are very rare for localized surface plasmon resonance. Consequently, the UV plasmonic effects of these metal@carbon NPs were demonstrated both by the observed enhancement in UV photoluminescence (PL) from the carbon nanoshells and by the improvement of the photo-responsivity of UV GaN photodetectors. This work could provide a universal method for carbon shelled metal NPs and expand plasmonics into the D-UV waveband.

Far-Field to Near-Field Coupling for Enhancing Light-Matter Interaction

NASA Astrophysics Data System (ADS)

Bonakdar, Alireza

This thesis reports on theoretical, modeling, and experimental research within the framework of a key scientific question, which is enhancing the coupling between diffraction-limited far-field and sub-wavelength quantum emitter/absorber. A typical optoelectronic device delivers an optical process such as light detection (e.g. photodetector) or light intensity modulation (e.g. electro-absorptive modulator). In conventional devices, optical process is in the form of far-field or guided wave modes. The main aim of this thesis is to show that converting these modes into near-field domain can enhance the performance of the optoelectronic device. Light in the form of far-field can be converted into near-field domain by the optical antenna. Among different optoelectronic devices, this thesis focuses mainly on integrating the optical antenna with infrared photodetectors. The available semiconductors have weak infrared absorption that reduces light detection efficiency. Integration of the optical antenna with infrared absorber (such as quantum wells in quantum well infrared photodetector (QWIP)) increases the infrared absorption. Particularly this integration is favorable as the optical antenna has low metallic loss in infrared region. The author of this thesis believes that optical antenna has unique properties in confining light on the scale of deep sub-wavelength, enhancing electric field intensity and delivering optical energy to semiconductor absorbers. These properties are reaching into practical applications only if overall optical performance is low loss, parameter free (independent of optical parameters such a polarization and angle of incident) and broadband. In this thesis, the integration of optical antenna with infrared photodetectors and thermophotovoltaic are researched and developed which satisfy the aforementioned criteria. In addition, several different optical antennas have been designed, fabricated and characterized in order to analyze and demonstrate the improvement of infrared absorption. In terms of design, novel optical antennas were simulated and proposed for a variety of infrared photodetectors such as a quantum well infrared photodetector, metal-insulator-metal detector, Schottky infrared photodetector, and two-photon absorption infrared detector. Antenna analyzes are not limited to light detection as a chapter of this thesis devoted on design and develop of a low power and ultrafast all-optical/optomechanical switchable antenna. The rest of the manuscript contains the novel lithography method in order to fabricate optical antennas with low cost and in cm-scale area. The method is based on the microsphere photolithography that expose photoresist underneath each microsphere with a focused intensive light -so called photonic nanojet. The developed lithography method takes advantage of microscopic range of optical path (micro-optics) in microsphere lenses that allows to push the exposure wavelength beyond deep UV region, where the refractive optics becomes impractical due to severe material absorption. The author believes that micro-optics lithography is an excellent candidate for large area and high throughput fabrication of sub-100-nm feature sizes in periodic array. In particular, this method facilitates the feasibility of metasurfaces and metamaterials, optical coating with efficient photon extraction/trapping, and highly sensitive bio-sensors in near IR and visible ranges of spectrum.

Hydrothermal Growth of ZnO Nanowires on UV-Nanoimprinted Polymer Structures.

PubMed

Park, Sooyeon; Moore, Sean A; Lee, Jaejong; Song, In-Hyouk; Farshchian, Bahador; Kim, Namwon

2018-05-01

Integration of zinc oxide (ZnO) nanowires on miniaturized polymer structures can broaden its application in multi-functional polymer devices by taking advantages of unique physical properties of ZnO nanowires and recent development of polymer microstructures in analytical systems. In this paper, we demonstrate the hydrothermal growth of ZnO nanowires on polymer microstructures fabricated by UV nanoimprinting lithography (NIL) using a polyurethane acrylate (PUA). Since PUA is a siloxane-urethane-acrylate compound containing the alpha-hydroxyl ketone, UV-cured PUA include carboxyl groups, which inhibit and suppress the nucleation and growth of ZnO nanowires on polymer structures. The presence of carboxyl groups in UV-cured PUA was substantiated by Fourier transform infrared spectroscopy (FTIR), and a Ag thin film was deposited on the nanoimprinted polymer structures to limit their inhibitive influence on the growth of ZnO nanowires. Furthermore, the naturally oxidized Ag layer (Ag2O) reduced crystalline lattice mismatches at the interface between ZnO-Ag during the seed annealing process. The ZnO nanowires grown on the Ag-deposited PUA microstructures were found to have comparable morphological characteristics with ZnO nanowires grown on a Si wafer.

Experiments towards establishing of design rules for R2R-UV-NIL with polymer working shims

NASA Astrophysics Data System (ADS)

Nees, Dieter; Ruttloff, Stephan; Palfinger, Ursula; Stadlober, Barbara

2016-03-01

Roll-to-Roll-UV-nanoimprint lithography (R2R-UV-NIL) enables high resolution large area patterning of flexible substrates and is therefore of increasing industrial interest. We have set up a custom-made R2R-UV-NIL pilot machine which is able to convert 10 inch wide web with velocities of up to 30 m/min. In addition, we have developed self-replicable UV-curable resins with tunable surface energy and Young's modulus for UV-imprint material as well as for polymer working stamp/shim manufacturing. Now we have designed test patterns for the evaluation of the impact of structure shape, critical dimension, pitch, depth, side wall angle and orientation relative to the web movement onto the imprint fidelity and working shim life time. We have used female (recessed structures) silicon masters of that design with critical dimensions between CD = 200 nm and 1600 nm, and structure depths of d = 500 nm and 1000 nm - all with vertical as well as inclined side walls. These entire master patterns have been transferred onto single male (protruding structures) R2R polymer working shims. The polymer working shims have been used for R2R-UV-NIL runs of several hundred meters and the imprint fidelity and process stability of the various test patterns have been compared. This study is intended as a first step towards establishing of design rules and developing of nanoimprint proximity correction strategies for industrial R2R-UV-NIL processes using polymer working shims.

Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy.

PubMed

Lin, Jingquan; Weber, Nils; Escher, Matthias; Maul, Jochen; Han, Hak-Seung; Merkel, Michael; Wurm, Stefan; Schönhense, Gerd; Kleineberg, Ulf

2008-09-29

A photoemission electron microscope based on a new contrast mechanism "interference contrast" is applied to characterize extreme ultraviolet lithography mask blank defects. Inspection results show that positioning of interference destructive condition (node of standing wave field) on surface of multilayer in the local region of a phase defect is necessary to obtain best visibility of the defect on mask blank. A comparative experiment reveals superiority of the interference contrast photoemission electron microscope (Extreme UV illumination) over a topographic contrast one (UV illumination with Hg discharge lamp) in detecting extreme ultraviolet mask blank phase defects. A depth-resolved detection of a mask blank defect, either by measuring anti-node peak shift in the EUV-PEEM image under varying inspection wavelength condition or by counting interference fringes with a fixed illumination wavelength, is discussed.

Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

NASA Astrophysics Data System (ADS)

Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

2014-10-01

We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

High-accuracy deep-UV Ramsey-comb spectroscopy in krypton

NASA Astrophysics Data System (ADS)

Galtier, Sandrine; Altmann, Robert K.; Dreissen, Laura S.; Eikema, Kjeld S. E.

2017-01-01

In this paper, we present a detailed account of the first precision Ramsey-comb spectroscopy in the deep UV. We excite krypton in an atomic beam using pairs of frequency-comb laser pulses that have been amplified to the millijoule level and upconverted through frequency doubling in BBO crystals. The resulting phase-coherent deep-UV pulses at 212.55 nm are used in the Ramsey-comb method to excite the two-photon 4p^6 → 4p^5 5p [1/2 ]_0 transition. For the {}^{84}Kr isotope, we find a transition frequency of 2829833101679(103) kHz. The fractional accuracy of 3.7 × 10^{-11} is 34 times better than previous measurements, and also the isotope shifts are measured with improved accuracy. This demonstration shows the potential of Ramsey-comb excitation for precision spectroscopy at short wavelengths.

Microfluidic device for chemical and mechanical manipulation of suspended cells

NASA Astrophysics Data System (ADS)

Rezvani, Samaneh; Shi, Nan; Squires, Todd M.; Schmidt, Christoph F.

2018-01-01

Microfluidic devices have proven to be useful and versatile for cell studies. We here report on a method to adapt microfluidic stickers made from UV-curable optical adhesive with inserted permeable hydrogel membrane micro-windows for mechanical studies of suspended cells. The windows were fabricated by optical projection lithography using scanning confocal microscopy. The device allows us to rapidly exchange embedding medium while observing and probing the cells. We characterize the device and demonstrate the function by exposing cultured fibroblasts to varying osmotic conditions. Cells can be shrunk reversibly under osmotic compression.

Thin HTSC films produced by a polymer metal precursor technique

NASA Astrophysics Data System (ADS)

Lampe, L. v.; Zygalsky, F.; Hinrichsen, G.

In precursors the metal ions are combined with acid groups of polymethacrylic acid (PMAA), polyacrylic acid (PAA) or novolac. Compared to thermal degradation temperature of pure polymers those of precursors are low. Precursors films were patterned by UV lithography. Diffractometric investigations showed that the c-axis oriented epitaxial films of YBa 2Cu 3O x and Bi 2Sr 2CaCu 2O x originated from amorphous metal oxide films, which were received after thermal degradation of the precursor. Transition temperatures and current densities were determined by electric resistivity measurements.

Toward large-area roll-to-roll printed nanophotonic sensors

NASA Astrophysics Data System (ADS)

Karioja, Pentti; Hiltunen, Jussi; Aikio, Sanna M.; Alajoki, Teemu; Tuominen, Jarkko; Hiltunen, Marianne; Siitonen, Samuli; Kontturi, Ville; Böhlen, Karl; Hauser, Rene; Charlton, Martin; Boersma, Arjen; Lieberzeit, Peter; Felder, Thorsten; Eustace, David; Haskal, Eliav

2014-05-01

Polymers have become an important material group in fabricating discrete photonic components and integrated optical devices. This is due to their good properties: high optical transmittance, versatile processability at relative low temperatures and potential for low-cost production. Recently, nanoimprinting or nanoimprint lithography (NIL) has obtained a plenty of research interest. In NIL, a mould is pressed against a substrate coated with a moldable material. After deformation of the material, the mold is separated and a replica of the mold is formed. Compared with conventional lithographic methods, imprinting is simple to carry out, requires less-complicated equipment and can provide high-resolution with high throughput. Nanoimprint lithography has shown potential to become a method for low-cost and high-throughput fabrication of nanostructures. We show the development process of nano-structured, large-area multi-parameter sensors using Photonic Crystal (PC) and Surface Enhanced Raman Scattering (SERS) methodologies for environmental and pharmaceutical applications. We address these challenges by developing roll-to-roll (R2R) UV-nanoimprint fabrication methods. Our development steps are the following: Firstly, the proof of concept structures are fabricated by the use of wafer-level processes in Si-based materials. Secondly, the master molds of successful designs are fabricated, and they are used to transfer the nanophotonic structures into polymer materials using sheet-level UV-nanoimprinting. Thirdly, the sheet-level nanoimprinting processes are transferred to roll-to-roll fabrication. In order to enhance roll-to-roll manufacturing capabilities, silicone-based polymer material development was carried out. In the different development phases, Photonic Crystal and SERS sensor structures with increasing complexities were fabricated using polymer materials in order to enhance sheet-level and roll-to-roll manufacturing processes. In addition, chemical and molecular imprint (MIP) functionalization methods were applied in the sensor demonstrators. In this paper, the process flow in fabricating large-area nanophotonic structures by the use of sheet-level and roll-to-roll UV- nanoimprinting is reported.

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics.

PubMed

Sun, Wei; Tan, Chee-Keong; Tansu, Nelson

2017-09-19

The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV) applications. Our numerical analysis indicates significant miniband engineering in the AlN/GaN DA by tuning the thicknesses of AlN barriers and GaN wells, so that the effective energy gap can be engineered from ~3.97 eV to ~5.24 eV. The band structure calculation also shows that the valence subbands of the AlN/GaN DA is properly rearranged leading to the heavy-hole (HH) miniband being the top valence subband, which results in the desired transverse-electric polarized emission. Furthermore, our study reveals that the electron-hole wavefunction overlaps in the AlN/GaN DA structure can be remarkably enhanced up to 97% showing the great potential of improving the internal quantum efficiency for mid- and deep-UV device application. In addition, the optical absorption properties of the AlN/GaN DA are analyzed with wide spectral coverage and spectral tunability in mid- and deep-UV regime. Our findings suggest the potential of implementing the AlN/GaN DA as a promising active region design for high efficiency mid- and deep-UV device applications.

Deep UV to NIR Space Telescopes and Exoplanet Coronagraphs: A Trade Study on Throughput, Polarization, Mirror Coating Options and Requirements

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatham; Shaklan, Stuart; Give'on, Amir; Cady, Eric; Marchen, Luis

2011-01-01

The NASA Exoplanet program and the Cosmic Origins program are exploring technical options to combine the visible to NIR performance requirements of a space coronagraph with the general astrophysics requirements of a space telescope covering the deep UV spectrum. Are there compatible options in terms of mirror coatings and telescope architecture to satisfy both goals? In this paper, we address some of the main concerns, particularly relating to polarization in the visible and throughput in the UV. Telescope architectures employing different coating options compatible with current technology are considered in this trade study.

Optical microspectrometer

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2004-05-25

An optical microspectrometer comprises a grism to disperse the spectra in a line object. A single optical microspectrometer can be used to sequentially scan a planar object, such as a dye-tagged microchip. Because the optical microspectrometer is very compact, multiple optical microspectrometers can be arrayed to provide simultaneous readout across the width of the planar object The optical microspectrometer can be fabricated with lithographic process, such as deep X-ray lithography (DXRL), with as few as two perpendicular exposures.

Growth And Characterization Studies Of Advanced Infrared Heterostructures

DTIC Science & Technology

2015-06-30

controlled within 50 arc-seconds for all the samples. The three samples were then processed into deep-etched mesa -type photodiodes, by using standard...contact ultraviolet lithography and wet-chemical etching. The circular mesa -size ranged from 25 to 400 µm in diameter. A 200-nm-thick SiNx film...coating was applied on top of the mesa . Devices were mounted on ceramic leadless chip carriers, and then mounted in the cryostat to characterize their

Direct metal transfer printing on flexible substrate for fabricating optics functional devices

NASA Astrophysics Data System (ADS)

Jiang, Yingjie; Zhou, Xiaohong; Zhang, Feng; Shi, Zhenwu; Chen, Linsen; Peng, Changsi

2015-11-01

New functional materials and devices based on metal patterns can be widely used in many new and expanding industries,such as flat panel displays, alternative energy,sensors and so on. In this paper, we introduce a new transfer printing method for fabricating metal optics functional devices. This method can directly transfer a metal pattern from a polyethylene terephthalate (PET)supported UV or polydimethylsiloxane (PDMS) pattern to another PET substrate. Purely taking advantage of the anaerobic UV curing adhesive (a-UV) on PET substrate, metal film can be easily peeled off from micro/nano-structured surface. As a result, metal film on the protrusion can be selectively transferred onto the target substrate, to make it the metal functional surface. But which on the bottom can not be transferred. This method provides low cost fabrication of metal thin film devices by avoiding high cost lithography process. Compared with conventional approach, this method can get more smooth rough edges and has wider tolerance range for the original master mold. Future developments and potential applications of this metal transfer method will be addressed.

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

PubMed Central

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-01-01

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results. PMID:28374856

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns.

PubMed

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-04-04

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results.

Two-photon absorption measurements of deep UV transmissible materials at 213 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patankar, S.; Yang, S. T.; Moody, J. D.

We report on two photon absorption measurements at 213nm of deep UV transmissible media including LiF, MgF 2, CaF 2, BaF 2, Sapphire (Al 2O 3) and high purity grades of fused-silica (SiO 2). A high stability 24ps Nd:YAG laser operating at the 5th harmonic (213nm) was used to generate a high intensity, long Rayleigh length Gaussian focus inside the samples. The measurements of the Fluoride crystals and Sapphire indicate two photon absorption coefficients between 0.004 and 0.82 cm/GW. We find that different grades of fused silica performed near identically for two photon absorption, however, there are differences in linearmore » losses associated with purity. A low two photon absorption cross section is measured for MgF 2 making it an ideal material for the propagation of high intensity deep UV lasers.« less

Two-photon absorption measurements of deep UV transmissible materials at 213 nm

DOE PAGES

Patankar, S.; Yang, S. T.; Moody, J. D.; ...

2017-09-19

We report on two photon absorption measurements at 213nm of deep UV transmissible media including LiF, MgF 2, CaF 2, BaF 2, Sapphire (Al 2O 3) and high purity grades of fused-silica (SiO 2). A high stability 24ps Nd:YAG laser operating at the 5th harmonic (213nm) was used to generate a high intensity, long Rayleigh length Gaussian focus inside the samples. The measurements of the Fluoride crystals and Sapphire indicate two photon absorption coefficients between 0.004 and 0.82 cm/GW. We find that different grades of fused silica performed near identically for two photon absorption, however, there are differences in linearmore » losses associated with purity. A low two photon absorption cross section is measured for MgF 2 making it an ideal material for the propagation of high intensity deep UV lasers.« less

Observation of extraordinary transmission in deep UV region from aluminum film coated two dimensional photonic crystals

NASA Astrophysics Data System (ADS)

Venkatesh, A.; Piragash Kumar, R. M.; Moorthy, V. H. S.

2018-05-01

We report the first observation of extraordinary transmission of deep-UV light (λ = 289nm) through 20nm aluminum film coated two-dimensional photonic crystals. The two-dimensional photonic crystals are made of self-assembled hexagonally arranged monolayer of 200 nm polystyrene spheres fabricated using drop casting method. The high quality photonic crystal exhibits a well-defined photonic band gap of 4.59 eV (λ = 270nm) and the aluminum coated two-dimensional photonic crystal displays extraordinary transmission in the deep-UV region at λ = 289 nm. The fabricated aluminum nanostructure produces a sensitivity of 42nm/RIU and 57nm/RIU when the refractive index of the surrounding medium is changed from 1 (= air) to 1.36 (= ethanol) and 1.49 (=toluene), respectively. Therefore, the aluminum film coated two-dimensional photonic crystals could be utilized to fabricate cost-effective and ultrasensitive chemical sensors.

Two-photon absorption measurements of deep UV transmissible materials at 213  nm.

PubMed

Patankar, S; Yang, S T; Moody, J D; Swadling, G F; Erlandson, A C; Bayramian, A J; Barker, D; Datte, P; Acree, R L; Pepmeier, B; Madden, R E; Borden, M R; Ross, J S

2017-10-20

We report on two-photon absorption measurements at 213 nm of deep UV transmissible media, including LiF, MgF 2 , CaF 2 , BaF 2 , sapphire (Al 2 O 3 ), and high-purity grades of fused-silica (SiO 2 ). A high-stability 24 ps Nd:YAG laser operating at the 5th harmonic (213 nm) was used to generate a high-intensity, long-Rayleigh-length Gaussian focus inside the samples. The measurements of the fluoride crystals and sapphire indicate two-photon absorption coefficients between 0.004 and 0.82 cm/GW. We find that different grades of fused silica performed near identically for two-photon absorption; however, there are differences in linear losses associated with purity. A low two-photon absorption cross section is measured for MgF 2 , making it an ideal material for the propagation of high-intensity deep UV lasers.

Fabrication of concave micromirrors for single cell imaging via controlled over-exposure of organically modified ceramics in single step lithography

PubMed Central

Bonabi, A.; Cito, S.; Tammela, P.; Jokinen, V.

2017-01-01

This work describes the fabrication of concave micromirrors to improve the sensitivity of fluorescence imaging, for instance, in single cell analysis. A new approach to fabrication of tunable round (concave) cross-sectional shaped microchannels out of the inorganic-organic hybrid polymer, Ormocomp®, via single step optical lithography was developed and validated. The concave micromirrors were implemented by depositing and patterning thin films of aluminum on top of the concave microchannels. The round cross-sectional shape was due to residual layer formation, which is inherent to Ormocomp® upon UV exposure in the proximity mode. We show that it is possible to control the residual layer thickness and thus the curved shape of the microchannel cross-sectional profile and eventually the focal length of the micromirror, by simply adjusting the UV exposure dose and the distance of the proximity gap (to the photomask). In general, an increase in the exposure dose or in the distance of the proximity gap results in a thicker residual layer and thus an increase in the radius of the microchannel curvature. Under constant exposure conditions, the radius of curvature is almost linearly dependent on the microchannel aspect ratio, i.e., the width (here, 20–200 μm) and the depth (here, 15–45 μm). Depending on the focal length, up to 8-fold signal enhancement over uncoated, round Ormocomp® microchannels was achieved in single cell imaging with the help of the converging micromirrors in an epifluorescence microscopy configuration. PMID:28652888

Fabrication of concave micromirrors for single cell imaging via controlled over-exposure of organically modified ceramics in single step lithography.

PubMed

Bonabi, A; Cito, S; Tammela, P; Jokinen, V; Sikanen, T

2017-05-01

This work describes the fabrication of concave micromirrors to improve the sensitivity of fluorescence imaging, for instance, in single cell analysis. A new approach to fabrication of tunable round (concave) cross-sectional shaped microchannels out of the inorganic-organic hybrid polymer, Ormocomp ® , via single step optical lithography was developed and validated. The concave micromirrors were implemented by depositing and patterning thin films of aluminum on top of the concave microchannels. The round cross-sectional shape was due to residual layer formation, which is inherent to Ormocomp ® upon UV exposure in the proximity mode. We show that it is possible to control the residual layer thickness and thus the curved shape of the microchannel cross-sectional profile and eventually the focal length of the micromirror, by simply adjusting the UV exposure dose and the distance of the proximity gap (to the photomask). In general, an increase in the exposure dose or in the distance of the proximity gap results in a thicker residual layer and thus an increase in the radius of the microchannel curvature. Under constant exposure conditions, the radius of curvature is almost linearly dependent on the microchannel aspect ratio, i.e., the width (here, 20-200  μ m) and the depth (here, 15-45  μ m). Depending on the focal length, up to 8-fold signal enhancement over uncoated, round Ormocomp ® microchannels was achieved in single cell imaging with the help of the converging micromirrors in an epifluorescence microscopy configuration.

Advanced industrial fluorescence metrology used for qualification of high quality optical materials

NASA Astrophysics Data System (ADS)

Engel, Axel; Becker, Hans-Juergen; Sohr, Oliver; Haspel, Rainer; Rupertus, Volker

2003-11-01

Schott Glas is developing and producing the optical material for various specialized applications in telecommunication, biomedical, optical, and micro lithography technology. The requirements on quality for optical materials are extremely high and still increasing. For example in micro lithography applications the impurities of the material are specified to be in the low ppb range. Usually the impurities in the lower ppb range are determined using analytical methods like LA ICP-MS and Neutron Activation Analysis. On the other hand absorption and laser resistivity of optical material is qualified with optical methods like precision spectral photometers and in-situ transmission measurements having UV lasers. Analytical methods have the drawback that they are time consuming and rather expensive, whereas the sensitivity for the absorption method will not be sufficient to characterize the future needs (coefficient much below 10-3 cm-1). In order to achieve the current and future quality requirements a Jobin Yvon FLUOROLOG 3.22 fluorescence spectrometer is employed to enable fast and precise qualification and analysis. The main advantage of this setup is the combination of highest sensitivity (more than one order of magnitude higher sensitivity that state of the art UV absorption spectroscopy) and fast measurement and evaluation cycles (several minutes compared to several hours necessary for chemical analytics). An overview is given for spectral characteristics and using specified standards. Moreover correlations to the material qualities are shown. In particular we have investigated the elementary fluorescence and absorption of rare earth element impurities as well as defects induced luminescence originated by impurities.

Novel organosilicone materials and patterning techniques for nanoimprint lithography

NASA Astrophysics Data System (ADS)

Pina, Carlos Alberto

Nanoimprint Lithography (NIL) is a high-throughput patterning technique that allows the fabrication of nanostructures with great precision. It has been listed on the International Technology Roadmap for Semiconductors (ITRS) as a candidate technology for future generation Si chip manufacturing. In nanoimprint Lithography a resist material, e.g. a thermoplastic polymer, is placed in contact with a mold and then mechanically deformed under an applied load to transfer the nano-features on the mold surface into the resist. The success of NIL relies heavily in the capability of fabricating nanostructures on different types of materials. Thus, a key factor for NIL implementation in industrial settings is the development of advanced materials suitable as the nanoimprint resist. This dissertation focuses on the engineering of new polymer materials suitable as NIL resist. A variety of silicone-based polymer precursors were synthesized and formulated for NIL applications. High throughput and high yield nanopatterning was successfully achieved. Furthermore, additional capabilities of the developed materials were explored for a range of NIL applications such as their use as flexible, UV-transparent stamps and silicon compatible etching layers. Finally, new strategies were investigated to expand the NIL potentiality. High throughput, non-residual layer imprinting was achieved with the newly developed resist materials. In addition, several strategies were designed for the precise control of nanoscale size patterned structures with multifunctional resist systems by post-imprinting modification of the pattern size. These developments provide NIL with a new set of tools for a variety of additional important applications.

Non-chemically amplified 248-nm resist materials

NASA Astrophysics Data System (ADS)

Willson, C. Grant; Yueh, Wang; Leeson, Michael J.; Steinhausler, Thomas; McAdams, Christopher L.; Dammel, Ralph R.; Sounik, James R.; Aslam, M.; Vicari, Richard; Sheehan, Michael

1997-07-01

Remarkable progress has been made in the formulation of chemically amplified resists for deep-UV (DUV or 248 nm) lithography. These materials are now in general use in full scale manufacturing. One of the deterrents to rapid and universal adoption of DUV lithography has been the combination of high cost of ownership and a narrow process latitude when compared to conventional i-line process alternatives. A significant part of the high cost of the DUV process is associated with installing and maintaining special air handling equipment that is required to remove basic contaminants from the ambient. Manufacture process latitude demands this special air handling. The chemically amplified resists were developed originally to support mercury lamp powered exposure systems. The sensitivity realized by chemical amplification is required to enable useful productivity with such systems that generate very little DUV flux at the wafer plane. With the advent of high powered excimer laser based illumination systems for 248 nm steppers and step-and-scan systems, it is appropriate to re-examine the applicability of non-chemically amplified DUV resist systems. These systems are less sensitive but have the potential to offer both lower cost of ownership and improved process latitude. A series of photoactive compounds (PACs) have been synthesized and auditioned for use in the formulation of a non-chemically amplified 248 nm resist. The most promising of these materials are analogs of 3-oxo-3-diazocoumarin. This chromophore displays photochemistry that is analogous to that of the diazonaphthoquinones (DNQ) that are the basis of i-line resist formulations, but it bleaches at 248 nm. Several structural analogs of the chromophore have been synthesized and a variety of ballast groups have been studied with the goal of enhancing the dissolution inhibition properties of the molecule. The diazocoumarin PACs have been formulated with customized phenolic resins that were designed to provide the combination of optical transparency, dry etch resistance and the dissolution characteristics that are required for manufacturing applications. The resins are copolymers of poly(4-hydroxystyrene) and blends of these polymers with novolac.

Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babichev, A. V., E-mail: A.Babichev@mail.ioffe.ru; Zhang, H.; Guan, N.

2016-08-15

We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In{sub 0.18}Ga{sub 0.82}N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximalmore » photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.« less

New dual-curvature microlens array with a high fill-factor for organic light emitting diode modules

NASA Astrophysics Data System (ADS)

Lin, Tsung-Hung; Yang, Hsiharng; Chao, Ching-Kong; Shui, Hung-Chi

2013-09-01

A new method for fabricating a novel dual-curvature microlens array with a high fill-factor using proximity printing in a lithography process is reported. The lens shapes include dual-curvature, which is a novel shape composed of triangles and hexagons. We utilized UV proximity printing by controlling a printing gap between the mask and substrate. The designed high density microlens array pattern can fabricate a dual-curvature microlens array with a high fill-factor in a photoresist material. It is due to the UV light diffraction which deflects away from the aperture edges and produces a certain exposure in the photoresist material outside the aperture edges. A dual-curvature microlens array with a height ratio of 0.48 can boost axial luminance up to 22%. Therefore, the novel dual-curvature microlens array offers an economical solution for increasing the luminance of organic light emitting diodes.

Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

NASA Astrophysics Data System (ADS)

Ghose, Susmita; Rahman, Shafiqur; Hong, Liang; Rojas-Ramirez, Juan Salvador; Jin, Hanbyul; Park, Kibog; Klie, Robert; Droopad, Ravi

2017-09-01

The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure (" separators="|2 ¯01 ) oriented β-Ga2O3 thin films with six-fold rotational symmetry when grown on a sapphire substrate. The thin films demonstrated significant absorption in the deep-ultraviolet (UV) region with an optical bandgap around 5.0 eV and a refractive index of 1.9. A deep-UV photodetector fabricated on the high quality β-Ga2O3 thin film exhibits high resistance and small dark current (4.25 nA) with expected photoresponse for 254 nm UV light irradiation suggesting that the material grown using the compound source is a potential candidate for deep-ultraviolet photodetectors.

Evaluation of hybrid polymers for high-precision manufacturing of 3D optical interconnects by two-photon absorption lithography

NASA Astrophysics Data System (ADS)

Schleunitz, A.; Klein, J. J.; Krupp, A.; Stender, B.; Houbertz, R.; Gruetzner, G.

2017-02-01

The fabrication of optical interconnects has been widely investigated for the generation of optical circuit boards. Twophoton absorption (TPA) lithography (or high-precision 3D printing) as an innovative production method for direct manufacture of individual 3D photonic structures gains more and more attention when optical polymers are employed. In this regard, we have evaluated novel ORMOCER-based hybrid polymers tailored for the manufacture of optical waveguides by means of high-precision 3D printing. In order to facilitate future industrial implementation, the processability was evaluated and the optical performance of embedded waveguides was assessed. The results illustrate that hybrid polymers are not only viable consumables for industrial manufacture of polymeric micro-optics using generic processes such as UV molding. They also are potential candidates to fabricate optical waveguide systems down to the chip level where TPA-based emerging manufacturing techniques are engaged. Hence, it is shown that hybrid polymers continue to meet the increasing expectations of dynamically growing markets of micro-optics and optical interconnects due to the flexibility of the employed polymer material concept.

The Hubble Deep UV Legacy Survey (HDUV): Survey Overview and First Results

NASA Astrophysics Data System (ADS)

Oesch, Pascal; Montes, Mireia; HDUV Survey Team

2015-08-01

Deep HST imaging has shown that the overall star formation density and UV light density at z>3 is dominated by faint, blue galaxies. Remarkably, very little is known about the equivalent galaxy population at lower redshifts. Understanding how these galaxies evolve across the epoch of peak cosmic star-formation is key to a complete picture of galaxy evolution. Here, we present a new HST WFC3/UVIS program, the Hubble Deep UV (HDUV) legacy survey. The HDUV is a 132 orbit program to obtain deep imaging in two filters (F275W and F336W) over the two CANDELS Deep fields. We will cover ~100 arcmin2, reaching down to 27.5-28.0 mag at 5 sigma. By directly sampling the rest-frame far-UV at z>~0.5, this will provide a unique legacy dataset with exquisite HST multi-wavelength imaging as well as ancillary HST grism NIR spectroscopy for a detailed study of faint, star-forming galaxies at z~0.5-2. The HDUV will enable a wealth of research by the community, which includes tracing the evolution of the FUV luminosity function over the peak of the star formation rate density from z~3 down to z~0.5, measuring the physical properties of sub-L* galaxies, and characterizing resolved stellar populations to decipher the build-up of the Hubble sequence from sub-galactic clumps. This poster provides an overview of the HDUV survey and presents the reduced data products and catalogs which will be released to the community.

Imprint Characteristics by Photo-Induced Solidification of Liquid Polymer

NASA Astrophysics Data System (ADS)

Komuro, Masanori; Taniguchi, Jun; Inoue, Seiji; Kimura, Naoya; Tokano, Yuji; Hiroshima, Hiroshi; Matsui, Shinji

2000-12-01

Nanoimprint lithography is an attractive technology for LSIs era below 40-nm critical dimension from the viewpoints of high-throughput and low-cost equipment. In order to avoid a pattern placement error due to thermal expansion in the conventional thermal imprint process, we attempted to replicate the mold pattern onto a liquid polymer, which was solidified using ultra-violet (UV) light irradiation at room temperature. The liquid polymer used here was supplied by TEIJIN SEIKI Co., and termed TSR-820. It was spin coated on slide glass to produce approximately 1.5-μm-thick polymer film. The thickness remained after UV exposure and rinsing in acetone was observed at the dose of 10 J/cm2 and it saturated about a UV exposure dose of 100 J/cm2 with an increase in the exposure dose. The mold fabricated of quartz plate was first pressed onto the polymer film at about 100 kg/cm2 and then the UV light was irradiated using an imprint apparatus developed for this work. After releasing the mold from the film, the substrate was rinsed in acetone to remove the residual liquid polymer. Eventually the minimum feature size of 100-nm line and 300-nm space pattern was successfully replicated in the polymer with good fidelity.

Status of backthinned AlGaN based focal plane arrays for deep-UV imaging

NASA Astrophysics Data System (ADS)

Reverchon, J.-L.; Lehoucq, G.; Truffer, J.-P.; Costard, E.; Frayssinet, E.; Semond, F.; Duboz, J.-Y.; Giuliani, A.; Réfrégiers, M.; Idir, M.

2017-11-01

The achievement of deep ultraviolet (UV) focal plane arrays (FPA) is required for both solar physics [1] and micro electronics industry. The success of solar mission (SOHO, STEREO [2], SDO [3]…), has shown the accuracy of imaging at wavelengths from 10 nm to 140 nm to reveal effects occurring in the sun corona. Deep UV steppers at 13 nm are another demanding imaging technology for the microelectronic industry in terms of uniformity and stability. A third application concerns beam shaping of Synchrotron lines [4]. Consequently, such wavelengths are of prime importance whereas the vacuum UV wavelengths are very difficult to detect due to the dramatic interaction of light with materials. The fast development of nitrides has given the opportunity to investigate AlGaN as a material for UV detection. Camera based on AlGaN present an intrinsic spectral selectivity and an extremely low dark current at room temperature. We have previously presented several FPA dedicated to deep UV based on 320 x 256 pixels of Schottky photodiodes with a pitch of 30 μm [4, 5]. AlGaN is grown on a silicon substrate instead of sapphire substrate only transparent down to 200 nm. After a flip-chip hybridization, silicon substrate and AlGaN basal layer was removed by dry etching. Then, the spectral responsivity of the FPA presented a quantum efficiency (QE) from 5% to 20% from 50 nm to 290 nm when removing the highly doped contact layer via a selective wet etching. This FPA suffered from a low uniformity incompatible with imaging, and a long time response due to variations of conductivity in the honeycomb. We also observed a low rejection of visible. It is probably due to the same honeycomb conductivity enhancement for wavelength shorter than 360 nm, i.e., the band gap of GaN. We will show hereafter an improved uniformity due to the use of a precisely ICP (Inductively Coupled Plasma) controlled process. The final membrane thickness is limited to the desertion layer. Neither access resistance limitation nor long response time are observed. QE varies from 5% at 50 nm to 15% at 6 nm (85% more when taking into account the filling factor). Consequently, we can propose prototypes concerning not only "solar blind" camera optimized for narrow band in the near UV range (between 280 nm and 260 nm), but also devices with spectral range extended in the deep UV (290 nm to 10 nm). Both detectors are available for an optical budget evaluation.

Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

NASA Technical Reports Server (NTRS)

Hartley, F.; Malek, C.; Neogi, J.

2001-01-01

The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

Determining the refractive index of human hemoglobin solutions by Kramers-Kronig relations with an improved absorption model.

PubMed

Gienger, Jonas; Groß, Hermann; Neukammer, Jörg; Bär, Markus

2016-11-01

The real part of the refractive index of aqueous solutions of human hemoglobin is computed from their absorption spectra in the wavelength range 250-1100 nm using the Kramers-Kronig (KK) relations, and the corresponding uncertainty analysis is provided. The strong ultraviolet (UV) and infrared absorbance of the water outside this spectral range were taken into account in a previous study employing KK relations. We improve these results by including the concentration dependence of the water absorbance as well as by modeling the deep UV absorbance of hemoglobin's peptide backbone. The two free parameters of the model for the deep UV absorbance are fixed by a global fit.

Spectral and Power Stability Tests of Deep UV LEDs for AC Charge Management

NASA Astrophysics Data System (ADS)

Sun, Ke-Xun; Higuchi, Sei; Goh, Allex; Allard, Brett; Gill, Dale; Buchman, Saps; Byer, Robert

2006-11-01

Deep ultraviolet (UV) LEDs have recently been used in AC charge management experiments to support gravitational reference sensors for future space missions. The UV LED based charge management system offers compact size, light weight, and low power consumption compared to plasma sources. The AC charge management technique, which is enabled by easy modulation of UV LED output, achieves higher dynamic range for charge control. Further, the high modulation frequency, which is out of the gravitational wave detection band, reduces disturbances to the proof mass. However, there is a need to test and possibly improve the lifetime of UV LEDs, which were developed only a year ago. We have initiated a series of spectral and power stability tests for UV LEDs and designed experiments according to the requirements of AC charge management. We operate UV LEDs with a modulated current drive and maintain the operating temperature at 22 °C,28 similar to the LISA spacecraft working condition. The testing procedures involve measuring the baseline spectral shape and output power level prior to the beginning of the tests and then re-measuring the same quantities periodically. As of the date of submission (August 28th, 2006), we have operated a UV LED for more than 2,700 hours.

High refractive index nanocomposite fluids for immersion lithography.

PubMed

Bremer, L; Tuinier, R; Jahromi, S

2009-02-17

The concept of using dispersions of nanoparticles as high refractive index fluids in immersion lithography is examined both from a theoretical and experimental point of view. In the theoretical part we show that gelation and demixing can be controlled in high solid dispersions, needed to achieve a high (refractive) index, by using short stabilizing brushes. We considered both fluid-fluid demixing by using statistical thermodynamics and percolation, computed using liquid-state approaches. Whenever demixing or percolation takes place, the nanoparticle dispersion is unsuited for immersion lithography. The minimum thickness of the stabilizer layer of a stable suspension is estimated assuming particles plus steric stabilizer to act as hard spheres with van der Waals attraction between the cores. Since the van der Waals attraction can be related to the optical properties of the particles and dispersion medium, it is also possible to estimate the refractive index that can be attained with composite immersion fluids. Using materials that are known to be highly transparent in the bulk at a wavelength of 193 nm, indices above 1.8 can be attained. Other materials with higher indices are expected to be transparent at 193 nm due to a blue shift of the UV absorption and enable much higher indices. In the experiment, we show that it is possible to prepare suspensions with particles of about 4 nm diameter that increase the refractive index of the continuous phase with 0.2 at a wavelength of 193 nm. The refractive index and density of such dispersions are proportional to the volume fraction of the disperse phase, and it is shown that the refractive index of the composite fluid can be predicted very well from the optical properties of the components. Furthermore, successful imaging experiments were performed through a dispersion of silica nanoparticles. These findings lead to the conclusion that immersion lithography using nanoparticle dispersions is indeed possible.

High performance Si immersion gratings patterned with electron beam lithography

NASA Astrophysics Data System (ADS)

Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

2014-07-01

Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error by a factor of 5. (3) The serial write process for typical gratings yields write times of about 24 hours- this makes prototyping costly. We discuss work with negative e-beam resist to reduce the fill factor of exposure, and therefore limit the exposure time. We also discuss the tradeoffs of long write-time serial write processes like e-beam with UV photomask lithography. We show the results of experiments on small pattern size prototypes on silicon wafers. Current prototypes now exceed 30 dB of suppression on spectral and spatial dimension ghosts compared to monochromatic spectral purity measurements of the backside of Si echelle gratings in reflection at 632 nm. We perform interferometry at 632 nm in reflection with a 25 mm circular beam on a grating with a blaze angle of 71.6°. The measured wavefront error is 0.09 waves peak to valley.

Lithography With Metallo-Organic Resists

NASA Astrophysics Data System (ADS)

Pastor, A. C.; Pastor, R. C.; Braunstein, M.; Tangonan, G. L.

1981-02-01

Photolithography with metallo-organic resists is a relatively new addition to photo-engraving technology, and involves the chemical incorporation of inorganic constituents into photopolymerizable organic compounds, so that the photoresist functions not merely as a masking material, as in conventional photolithography, but also as the mass transference vehicle itself. The deposition of thin structured films of metal oxides with this method has been accomplished, the metal-doped resist in each case being the metal acrylate in acrylic acid, except in those cases where the metal acrylate was insoluble. Polymerization was effected with uv irradiation. The criteria for depositing other classes of inorganic compounds are outlined.

Fabrication of complex nanoscale structures on various substrates

NASA Astrophysics Data System (ADS)

Han, Kang-Soo; Hong, Sung-Hoon; Lee, Heon

2007-09-01

Polymer based complex nanoscale structures were fabricated and transferred to various substrates using reverse nanoimprint lithography. To facilitate the fabrication and transference of the large area of the nanostructured layer to the substrates, a water-soluble polyvinyl alcohol mold was used. After generation and transference of the nanostructured layer, the polyvinyl alcohol mold was removed by dissolving in water. A residue-free, UV-curable, glue layer was formulated and used to bond the nanostructured layer onto the substrates. As a result, nanometer scale patterned polymer layers were bonded to various substrates and three-dimensional nanostructures were also fabricated by stacking of the layers.

Low thermal distortion extreme-UV lithography reticle

DOEpatents

Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

2002-01-01

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Low thermal distortion extreme-UV lithography reticle

DOEpatents

Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

2001-01-01

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

Critical dimensional linewidth calibration using UV microscope and laser interferometry

NASA Astrophysics Data System (ADS)

Li, Qi; Gao, Si-tian; Li, Wei; Lu, Ming-zhen; Zhang, Ming-kai

2013-10-01

In order to calibrate the critical dimensional (CD) uncertainty of lithography masks in semiconductor manufacturing, NIM is building a two dimensional metrological UV microscope which has traceable measurement ability for nanometer linewidths and pitches. The microscope mainly consists of UV light receiving components, piezoelectric ceramics (PZT) driven stage and interferometer calibration framework. In UV light receiving components they include all optical elements on optical path. The UV light originates from Köhler high aperture transmit/reflect illumination sources; then goes through objective lens to UV splitting optical elements; after that, one part of light attains UV camera for large range calibration, the other part of light passes through a three dimensional adjusted pinhole and is collected by PMT for nanoscale scanning. In PZT driven stage, PZT stick actuators with closed loop control are equipped to push/pull a flexural hinge based platform. The platform has a novel designed compound flexural hinges which nest separate X, Y direction moving mechanisms within one layer but avoiding from mutual cross talk, besides this, the hinges also contain leverage structures to amplify moving distance. With these designs, the platform can attain 100 μm displacement ranges as well as 1 nm resolution. In interferometer framework a heterodyne multi-pass interferometer is mounted on the platform, which measures X-Y plane movement and Z axis rotation, through reference mirror mounted on objective lens tube and Zerodur mirror mounted on PZT platform, the displacement is traced back to laser wavelength. When development is finished, the apparatus can offer the capability to calibrate one dimensional linewidths and two dimensional pitches ranging from 200nm to 50μm with expanded uncertainty below 20nm.

Geocoronal Imaging from the Deep Space Gateway

NASA Astrophysics Data System (ADS)

Waldrop, L.; Immel, T.; Clarke, J.; Fillingim, M.; Rider, K.; Qin, J.; Bhattacharyya, D.; Doe, R.

2018-02-01

UV imaging of geocoronal emission at high spatial and temporal resolution from deep space would provide crucial new constraints on global exospheric structure and dynamics, significantly advancing models of space weather and atmospheric escape.

Making structures for cell engineering.

PubMed

Wilkinson, C D W

2004-10-22

This is a mainly historical account of the events, methods and artifacts arising from my collaboration with Adam Curtis over the past twenty years to make exercise grounds for biological cells. Initially the structures were made in fused silica by photo-lithography and dry etching. The need to make micron-sized features in biodegradable polymers, led to the development of embossing techniques. Some cells response to grooves only a few tens of nanometers deep--this led to a desire to find the response of cells to features of nanometric size overall. Regular arrays of such features were made using electron beam lithography for definition of the pattern. Improvements were made in the lithographic techniques to allow arrays to be defined over areas bigger than 1 cm2. Structures with microelectrodes arranged inside guiding grooves to allow the formation of sparse predetermined networks of neurons were made. It is concluded that the creation of pattern, as in vivo, in assemblies of regrown cells in scaffolds may well be necessary in advanced cell engineering applications.

Rapid Prototyping Technique for the Fabrication of Millifluidic Devices for Polymer Formulations

NASA Astrophysics Data System (ADS)

Cabral, Joao; Harrison, Christopher; Eric, Amis; Karim, Alamgir

2003-03-01

We describe a rapid prototyping technique for the fabrication of 600 micron deep fluidic channels in a solvent-resistant polymeric matrix. Using a conventional illumination source, a laser-jet printed mask, and a commercially available thioelene-based adhesive, we demonstrate the fabrication of fluidic channels which are impervious to a wide range of solvents. The fabrication of channels with this depth by conventional lithography would be both challenging and time-consuming. We demonstrate two lithography methods: one which fabricates channels sealed between glass plates (closed face) and one which fabricates structures on a single plate (open-faced). Furthermore, we demonstrate that this technology can be used to fabricate channels with a depth which varies linearly with distance. The latter is completely compatible with silicone replication technniques. Additionally, we demonstrate that siloxane-based elastomer molds of these channels can be readily made for aqueous applications. Applications to on-line phase mapping of polymer solutions (PEO-Water-Salt) and off line phase separation studies will be discussed.

Pattern Inspection of EUV Masks Using DUV Light

NASA Astrophysics Data System (ADS)

Liang, Ted; Tejnil, Edita; Stivers, Alan R.

2002-12-01

Inspection of extreme ultraviolet (EUV) lithography masks requires reflected light and this poses special challenges for inspection tool suppliers as well as for mask makers. Inspection must detect all the printable defects in the absorber pattern as well as printable process-related defects. Progress has been made under the NIST ATP project on "Intelligent Mask Inspection Systems for Next Generation Lithography" in assessing the factors that impact the inspection tool sensitivity. We report in this paper the inspection of EUV masks with programmed absorber defects using 257nm light. All the materials of interests for masks are highly absorptive to EUV light as compared to deep ultraviolet (DUV) light. Residues and contamination from mask fabrication process and handling are prone to be printable. Therefore, it is critical to understand their EUV printability and optical inspectability. Process related defects may include residual buffer layer such as oxide, organic contaminants and possible over-etch to the multilayer surface. Both simulation and experimental results will be presented in this paper.

Transmission and group-delay characterization of coupled resonator optical waveguides apodized through the longitudinal offset technique.

PubMed

Doménech, J D; Muñoz, P; Capmany, J

2011-01-15

In this Letter, the amplitude and group delay characteristics of coupled resonator optical waveguides apodized through the longitudinal offset technique are presented. The devices have been fabricated in silicon-on-insulator technology employing deep ultraviolet lithography. The structures analyzed consisted of three racetracks resonators uniform (nonapodized) and apodized with the aforementioned technique, showing a delay of 5 ± 3 ps and 4 ± 0.5 ps over 1.6 and 1.4 nm bandwidths, respectively.

Contamination and UV lasers: lessons learned

NASA Astrophysics Data System (ADS)

Daly, John G.

2015-09-01

Laser induced damage to optical elements has been a subject of significant research, development, and improvement, since the first lasers were built over the last 50 years. Better materials, with less absorption, impurities, and defects are available, as well as surface coatings with higher laser damage resistance. However, the presence of contamination (particles, surface deposition films, or airborne) can reduce the threshold for damage by several orders of magnitude. A brief review of the anticipated laser energy levels for damage free operation is presented as a lead into the problems associated with contamination for ultraviolet (UV) laser systems. As UV lasers become more common in applications especially in areas such as lithography, these problems have limited reliability and added to costs. This has been characterized as Airborne Molecular Contamination (AMC) in many published reports. Normal engineering guidelines such as screening materials within the optical compartment for low outgassing levels is the first step. The use of the NASA outgassing database (or similar test methods) with low Total Mass Loss (TML) and Condensed Collected Volatiles Collected Mass (CVCM) is a good baseline. Energetic UV photons are capable of chemical bond scission and interaction with surface contaminant or airborne materials results in deposition of obscuring film laser footprints that continue to degrade laser system performance. Laser systems with average powers less than 5 mW have been shown to exhibit aggressive degradation. Lessons learned over the past 15 years with UV laser contamination and steps to reduce risk will be presented.

Fiscal Year 2011 Director’s Strategic Initiative Final Report Heterogeneous Device Architectures Incorporating Nitride Semiconductors for Enhanced Functionality of Optoelectronic Devices

DTIC Science & Technology

2014-03-01

electromagnetic radiation across the spectrum from the ultraviolet ( UV ) to terahertz, heterogeneous integration of these materials with others having different...weak absorption that limit the QE of homogenous SiC-based photodetectors in the deep UV and near UV regions, respectively. Furthermore, we have...Polarization-Enhanced III-Nitride-SiC Avalanche Photodiodes Semiconductor-based ultraviolet ( UV ) avalanche photodetectors (APDs) have significant promise

Air-assisted dispersive liquid-liquid microextraction based on a new hydrophobic deep eutectic solvent for the preconcentration of benzophenone-type UV filters from aqueous samples.

PubMed

Ge, Dandan; Zhang, Yi; Dai, Yixiu; Yang, Shumin

2018-04-01

Deep eutectic solvents are considered as new and green solvents that can be widely used in analytical chemistry such as microextraction. In the present work, a new dl-menthol-based hydrophobic deep eutectic solvent was synthesized and used as extraction solvents in an air-assisted dispersive liquid-liquid microextraction method for preconcentration and extraction of benzophenone-type UV filters from aqueous samples followed by high-performance liquid chromatography with diode array detection. In an experiment, the deep eutectic solvent formed by dl-menthol and decanoic acid was added to an aqueous solution containing the UV filters, and then the mixture was sucked up and injected five times by using a glass syringe, and a cloudy state was achieved. After extraction, the solution was centrifuged and the upper phase was subjected to high-performance liquid chromatography for analysis. Various parameters such as the type and volume of the deep eutectic solvent, number of pulling, and pushing cycles, solution pH and salt concentration were investigated and optimized. Under the optimum conditions, the developed method exhibited low limits of detection and limits of quantitation, good linearity, and precision. Finally, the proposed method was successfully applied to determine the benzophenone-type filters in environmental water samples with relative recoveries of 88.8-105.9%. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Programmable lithography engine (ProLE) grid-type supercomputer and its applications

NASA Astrophysics Data System (ADS)

Petersen, John S.; Maslow, Mark J.; Gerold, David J.; Greenway, Robert T.

2003-06-01

There are many variables that can affect lithographic dependent device yield. Because of this, it is not enough to make optical proximity corrections (OPC) based on the mask type, wavelength, lens, illumination-type and coherence. Resist chemistry and physics along with substrate, exposure, and all post-exposure processing must be considered too. Only a holistic approach to finding imaging solutions will accelerate yield and maximize performance. Since experiments are too costly in both time and money, accomplishing this takes massive amounts of accurate simulation capability. Our solution is to create a workbench that has a set of advanced user applications that utilize best-in-class simulator engines for solving litho-related DFM problems using distributive computing. Our product, ProLE (Programmable Lithography Engine), is an integrated system that combines Petersen Advanced Lithography Inc."s (PAL"s) proprietary applications and cluster management software wrapped around commercial software engines, along with optional commercial hardware and software. It uses the most rigorous lithography simulation engines to solve deep sub-wavelength imaging problems accurately and at speeds that are several orders of magnitude faster than current methods. Specifically, ProLE uses full vector thin-mask aerial image models or when needed, full across source 3D electromagnetic field simulation to make accurate aerial image predictions along with calibrated resist models;. The ProLE workstation from Petersen Advanced Lithography, Inc., is the first commercial product that makes it possible to do these intensive calculations at a fraction of a time previously available thus significantly reducing time to market for advance technology devices. In this work, ProLE is introduced, through model comparison to show why vector imaging and rigorous resist models work better than other less rigorous models, then some applications of that use our distributive computing solution are shown. Topics covered describe why ProLE solutions are needed from an economic and technical aspect, a high level discussion of how the distributive system works, speed benchmarking, and finally, a brief survey of applications including advanced aberrations for lens sensitivity and flare studies, optical-proximity-correction for a bitcell and an application that will allow evaluation of the potential of a design to have systematic failures during fabrication.

Two novel nonlinear optical carbonates in the deep-ultraviolet region: KBeCO3F and RbAlCO3F2

PubMed Central

Kang, Lei; Lin, Zheshuai; Qin, Jingui; Chen, Chuangtian

2013-01-01

With the rapid developments of the all-solid-state deep-ultraviolet (deep-UV) lasers, the good nonlinear optical (NLO) crystal applied in this spectral region is currently lacking. Here, we design two novel NLO carbonates KBeCO3F and RbAlCO3F2 from the first-principles theory implemented in the molecular engineering expert system especially for NLO crystals. Both structurally stable crystals possess very large energy band gaps and optical anisotropy, so they would become the very promising deep-UV NLO crystals alternative to KBBF. Recent experimental results on MNCO3F (M = K, Rb, Cs; N = Ca, Sr, Ba) not only confirm our calculations, but also suggest that the synthesis of the KBeCO3F and RbAlCO3F2 crystals is feasible. PMID:23455618

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

2017-05-01

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10-5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm-3 to 1.5 × 1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.

Fabrication of novel plasmonics-active substrates

NASA Astrophysics Data System (ADS)

Dhawan, Anuj; Gerhold, Michael; Du, Yan; Misra, Veena; Vo-Dinh, Tuan

2009-02-01

This paper describes methodologies for fabricating of highly efficient plasmonics-active SERS substrates - having metallic nanowire structures with pointed geometries and sub-5 nm gap between the metallic nanowires enabling concentration of high EM fields in these regions - on a wafer-scale by a reproducible process that is compatible with large-scale development of these substrates. Excitation of surface plasmons in these nanowire structures leads to substantial enhancement in the Raman scattering signal obtained from molecules lying in the vicinity of the nanostructure surface. The methodologies employed included metallic coating of silicon nanowires fabricated by employing deep UV lithography as well as controlled growth of silicon germanium on silicon nanostructures to form diamond-shaped nanowire structures followed by metallic coating. These SERS substrates were employed for detecting chemical and biological molecules of interest. In order to characterize the SERS substrates developed in this work, we obtained SERS signals from molecules such as p-mercaptobenzoic acid (pMBA) and cresyl fast violet (CFV) attached to or adsorbed on the metal-coated SERS substrates. It was observed that both gold-coated triangular shaped nanowire substrates as well as gold-coated diamond shaped nanowire substrates provided very high SERS signals for the nanowires having sub-15 nm gaps and that the SERS signal depends on the closest spacing between the metal-coated silicon and silicon germanium nanowires. SERS substrates developed by the different processes were also employed for detection of biological molecules such as DPA (Dipicolinic Acid), an excellent marker for spores of bacteria such as Anthrax.

Next generation of Z* modelling tool for high intensity EUV and soft x-ray plasma sources simulations

NASA Astrophysics Data System (ADS)

Zakharov, S. V.; Zakharov, V. S.; Choi, P.; Krukovskiy, A. Y.; Novikov, V. G.; Solomyannaya, A. D.; Berezin, A. V.; Vorontsov, A. S.; Markov, M. B.; Parot'kin, S. V.

2011-04-01

In the specifications for EUV sources, high EUV power at IF for lithography HVM and very high brightness for actinic mask and in-situ inspections are required. In practice, the non-equilibrium plasma dynamics and self-absorption of radiation limit the in-band radiance of the plasma and the usable radiation power of a conventional single unit EUV source. A new generation of the computational code Z* is currently developed under international collaboration in the frames of FP7 IAPP project FIRE for modelling of multi-physics phenomena in radiation plasma sources, particularly for EUVL. The radiation plasma dynamics, the spectral effects of self-absorption in LPP and DPP and resulting Conversion Efficiencies are considered. The generation of fast electrons, ions and neutrals is discussed. Conditions for the enhanced radiance of highly ionized plasma in the presence of fast electrons are evaluated. The modelling results are guiding a new generation of EUV sources being developed at Nano-UV, based on spatial/temporal multiplexing of individual high brightness units, to deliver the requisite brightness and power for both lithography HVM and actinic metrology applications.

From Monochrome to Technicolor: Simple Generic Approaches to Multicomponent Protein Nanopatterning Using Siloxanes with Photoremovable Protein-Resistant Protecting Groups

DOE Office of Scientific and Technical Information (OSTI.GOV)

El Zubir, Osama; Xia, Sijing; Ducker, Robert E.

We show that sequential protein deposition is possible by photodeprotection of films formed from a tetraethylene-glycol functionalized nitrophenylethoxycarbonyl-protected aminopropyltriethoxysilane (NPEOC-APTES). Exposure to near-UV irradiation removes the protein-resistant protecting group, and allows protein adsorption onto the resulting aminated surface. The protein resistance was tested using proteins with fluorescent labels and microspectroscopy of two-component structures formed by micro- and nanopatterning and deposition of yellow and green fluorescent proteins (YFP/GFP). Nonspecific adsorption onto regions where the protecting group remained intact was negligible. Multiple component patterns were also formed by near-field methods. Because reading and writing can be decoupled in a near-field microscope, itmore » is possible to carry out sequential patterning steps at a single location involving different proteins. Up to four different proteins were formed into geometric patterns using near-field lithography. Interferometric lithography facilitates the organization of proteins over square cm areas. Two-component patterns consisting of 150 nm streptavidin dots formed within an orthogonal grid of bars of GFP at a period of ca. 500 nm could just be resolved by fluorescence microscopy.« less

From Monochrome to Technicolor: Simple Generic Approaches to Multicomponent Protein Nanopatterning Using Siloxanes with Photoremovable Protein-Resistant Protecting Groups

DOE PAGES

El Zubir, Osama; Xia, Sijing; Ducker, Robert E.; ...

2017-05-27

We show that sequential protein deposition is possible by photodeprotection of films formed from a tetraethylene-glycol functionalized nitrophenylethoxycarbonyl-protected aminopropyltriethoxysilane (NPEOC-APTES). Exposure to near-UV irradiation removes the protein-resistant protecting group, and allows protein adsorption onto the resulting aminated surface. The protein resistance was tested using proteins with fluorescent labels and microspectroscopy of two-component structures formed by micro- and nanopatterning and deposition of yellow and green fluorescent proteins (YFP/GFP). Nonspecific adsorption onto regions where the protecting group remained intact was negligible. Multiple component patterns were also formed by near-field methods. Because reading and writing can be decoupled in a near-field microscope, itmore » is possible to carry out sequential patterning steps at a single location involving different proteins. Up to four different proteins were formed into geometric patterns using near-field lithography. Interferometric lithography facilitates the organization of proteins over square cm areas. Two-component patterns consisting of 150 nm streptavidin dots formed within an orthogonal grid of bars of GFP at a period of ca. 500 nm could just be resolved by fluorescence microscopy.« less

100-nm gate lithography for double-gate transistors

NASA Astrophysics Data System (ADS)

Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

2001-09-01

The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

PubMed

Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

2013-12-02

We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

Fluid management in roll-to-roll nanoimprint lithography

NASA Astrophysics Data System (ADS)

Jain, A.; Bonnecaze, R. T.

2013-06-01

The key process parameters of UV roll-to-roll nanoimprint lithography are identified from an analysis of the fluid, curing, and peeling dynamics. The process includes merging of droplets of imprint material, curing of the imprint material from a viscous liquid to elastic solid resist, and pattern replication and detachment of the resist from template. The time and distances on the web or rigid substrate over which these processes occur are determined as function of the physical properties of the uncured liquid, the cured solid, and the roller configuration. The upper convected Maxwell equation is used to model the viscoelastic liquid and to calculate the force on the substrate and the torque on the roller. The available exposure time is found to be the rate limiting parameter and it is O(√Rho /uo), where R is the radius of the roller, ho is minimum gap between the roller and web, and uo is the velocity of the web. The residual layer thickness of the resist should be larger than the gap between the roller and the substrate to ensure complete feature filling and optimal pattern replication. For lower residual layer thickness, the droplets may not merge to form a continuous film for pattern transfer.

Contiguous metallic rings: an inductive mesh with high transmissivity, strong electromagnetic shielding, and uniformly distributed stray light.

PubMed

Tan, Jiubin; Lu, Zhengang

2007-02-05

This paper presents the experimental study on an inductive mesh composed of contiguous metallic rings fabricated using UV-lithography on quartz glass. Experimental results indicate that, at the same period and linewidth as square mesh, ring mesh has better transmissivity for its higher obscuration ratio, stronger electromagnetic shielding performance for its smaller maximum aperture, and less degradation of imaging quality for its lower ratio and uniform distribution of high order diffraction energy. It is therefore concluded that this kind of ring mesh can be used as high-pass filters to provide electromagnetic shielding of optical transparent elements.

Low thermal distortion Extreme-UV lithography reticle and method

DOEpatents

Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.

2002-01-01

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Fourier fringe analysis and its application to metrology of extreme physical phenomena: a review [Invited].

PubMed

Takeda, Mitsuo

2013-01-01

The paper reviews a technique for fringe analysis referred to as Fourier fringe analysis (FFA) or the Fourier transform method, with a particular focus on its application to metrology of extreme physical phenomena. Examples include the measurement of extremely small magnetic fields with subfluxon sensitivity by electron wave interferometry, subnanometer wavefront evaluation of projection optics for extreme UV lithography, the detection of sub-Ångstrom distortion of a crystal lattice, and the measurement of ultrashort optical pulses in the femotsecond to attosecond range, which show how the advantages of FFA are exploited in these cutting edge applications.

Fiber-coupled dielectric-loaded plasmonic waveguides.

PubMed

Gosciniak, Jacek; Volkov, Valentyn S; Bozhevolnyi, Sergey I; Markey, Laurent; Massenot, Sébastien; Dereux, Alain

2010-03-01

Fiber in- and out-coupling of radiation guided by dielectric-loaded surface plasmon-polariton waveguides (DLSPPWs) is realized using intermediate tapered dielectric waveguides. The waveguide structures fabricated by large-scale UV-lithography consist of 1-microm-thick polymer ridges tapered from 10-microm-wide ridges deposited directly on a magnesium fluoride substrate to 1-microm-wide ridges placed on a 50-nm-thick and 100-microm-wide gold stripe. Using fiber-to-fiber transmission measurements at telecom wavelengths, the performance of straight and bent DLSPPWs is characterized demonstrating the overall insertion loss below 24 dB, half of which is attributed to the DLSPPW loss of propagation over the 100-microm-long distance.

Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

PubMed Central

2014-01-01

To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively. PMID:25276101

Great Optically Luminous Dropout Research Using Subaru HSC (GOLDRUSH). I. UV luminosity functions at z ˜ 4-7 derived with the half-million dropouts on the 100 deg2 sky

NASA Astrophysics Data System (ADS)

Ono, Yoshiaki; Ouchi, Masami; Harikane, Yuichi; Toshikawa, Jun; Rauch, Michael; Yuma, Suraphong; Sawicki, Marcin; Shibuya, Takatoshi; Shimasaku, Kazuhiro; Oguri, Masamune; Willott, Chris; Akhlaghi, Mohammad; Akiyama, Masayuki; Coupon, Jean; Kashikawa, Nobunari; Komiyama, Yutaka; Konno, Akira; Lin, Lihwai; Matsuoka, Yoshiki; Miyazaki, Satoshi; Nagao, Tohru; Nakajima, Kimihiko; Silverman, John; Tanaka, Masayuki; Taniguchi, Yoshiaki; Wang, Shiang-Yu

2018-01-01

We study the UV luminosity functions (LFs) at z ˜ 4, 5, 6, and 7 based on the deep large-area optical images taken by the Hyper Suprime-Cam (HSC) Subaru Strategic Program (SSP). On the 100 deg2 sky of the HSC SSP data available to date, we take enormous samples consisting of a total of 579565 dropout candidates at z ˜ 4-7 by the standard color selection technique, 358 out of which are spectroscopically confirmed by our follow-up spectroscopy and other studies. We obtain UV LFs at z ˜ 4-7 that span a very wide UV luminosity range of ˜0.002-100 L_UV^\\ast (-26 < MUV < -14 mag) by combining LFs from our program and the ultra-deep Hubble Space Telescope legacy surveys. We derive three parameters of the best-fit Schechter function, ϕ*, M_UV^{ \\ast}, and α, of the UV LFs in the magnitude range where the active galactic nucleus (AGN) contribution is negligible, and find that α and ϕ* decrease from z ˜ 4 to 7 with no significant evolution of M_UV^{ \\ast}. Because our HSC SSP data bridge the LFs of galaxies and AGNs with great statistical accuracy, we carefully investigate the bright end of the galaxy UV LFs that are estimated by the subtraction of the AGN contribution either aided by spectroscopy or the best-fit AGN UV LFs. We find that the bright end of the galaxy UV LFs cannot be explained by the Schechter function fits at >2 σ significance, and require either double power-law functions or modified Schechter functions that consider a magnification bias due to gravitational lensing.

Lunar Volatile System Dynamics: Observations Enabled by the Deep Space Gateway

NASA Astrophysics Data System (ADS)

Honniball, C. I.; Lucey, P. G.; Petro, N.; Hurley, D.; Farrell, W.

2018-02-01

A UV spectrometer-imager and IR spectrometer are proposed to solve questions regarding the lunar volatile system. The instrument takes advantage of highly elliptical orbits and the thermal management system of the Deep Space Gateway.

Detection of Organic Matter in Greenland Ice Cores by Deep-UV Fluorescence

NASA Astrophysics Data System (ADS)

Willis, M.; Malaska, M.; Wanger, G.; Bhartia, R.; Eshelman, E.; Abbey, W.; Priscu, J. C.

2017-12-01

The Greenland Ice Sheet is an Earthly analog for icy ocean worlds in the outer Solar System. Future missions to such worlds including Europa, Enceladus, and Titan may potentially include spectroscopic instrumentation to examine the surface/subsurface. The primary goal of our research is to test deep UV/Raman systems for in the situ detection and localization of organics in ice. As part of this effort we used a deep-UV fluorescence instrument able to detect naturally fluorescent biological materials such as aromatic molecules found in proteins and whole cells. We correlated these data with more traditional downstream analyses of organic material in natural ices. Supraglacial ice cores (2-4 m) were collected from several sites on the southwest outlet of the Greenland Ice Sheet using a 14-cm fluid-free mechanical coring system. Repeat spectral mapping data were initially collected longitudinally on uncut core sections. Cores were then cut into 2 cm thick sections along the longitudinal axis, slowly melted and analyzed for total organic carbon (TOC), total dissolved nitrogen (TDN), and bacterial density. These data reveal a spatial correlation between organic matter concentration, cell density, and the deep UV fluorescence maps. Our results provide a profile of the organics embedded within the ice from the top surface into the glacial subsurface, and the TOC:TDN data from the clean interior of the cores are indicative of a biological origin. This work provides a background dataset for future work to characterize organic carbon in the Greenland Ice Sheet and validation of novel instrumentation for in situ data collection on icy bodies.

Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

NASA Astrophysics Data System (ADS)

Jaiswal, Piyush; Ul Muazzam, Usman; Pratiyush, Anamika Singh; Mohan, Nagaboopathy; Raghavan, Srinivasan; Muralidharan, R.; Shivashankar, S. A.; Nath, Digbijoy N.

2018-01-01

We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at <200 °C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline β-Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4-5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the β-Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of β-Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering.

GaN ultraviolet p-i-n photodetectors with enhanced deep ultraviolet quantum efficiency

NASA Astrophysics Data System (ADS)

Wang, Guosheng; Xie, Feng; Wang, Jun; Guo, Jin

2017-10-01

GaN ultraviolet (UV) p-i-n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of˜7 nA/cm2 under -5 V, and a zero-bias peak responsivity of ˜0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

NASA Astrophysics Data System (ADS)

Islam, S. M.; Protasenko, Vladimir; Lee, Kevin; Rouvimov, Sergei; Verma, Jai; Xing, Huili Grace; Jena, Debdeep

2017-08-01

Deep ultraviolet (UV) optical emission below 250 nm (˜5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (˜5.7-5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN. The quantum confinement energy in these heterostructures is larger than the bandgaps of traditional semiconductors, made possible by the large band offsets. These molecular beam epitaxy-grown extreme quantum-confinement GaN/AlN heterostructures exhibit an internal quantum efficiency of 40% at wavelengths as short as 219 nm. These observations together with the ability to engineer the interband optical matrix elements to control the direction of photon emission in such binary quantum disk active regions offer unique advantages over alloy AlGaN quantum well counterparts for the realization of deep-UV light-emitting diodes and lasers.

Two-photon excitation in chip electrophoresis enabling label-free fluorescence detection in non-UV transparent full-body polymer chips.

PubMed

Geissler, David; Belder, Detlev

2015-12-01

One of the most commonly employed detection methods in microfluidic research is fluorescence detection, due to its ease of integration and excellent sensitivity. Many analytes though do not show luminescence when excited in the visible light spectrum, require suitable dyes. Deep-ultraviolet (UV) excitation (<300 nm) allows label-free detection of a broader range of analytes but also mandates the use of expensive fused silica glass, which is transparent to UV light. Herein, we report the first application of label-free deep UV fluorescence detection in non-UV transparent full-body polymer microfluidic devices. This was achieved by means of two-photon excitation in the visible range (λex = 532 nm). Issues associated with the low optical transmittance of plastics in the UV range were successfully circumvented in this way. The technique was investigated by application to microchip electrophoresis of small aromatic compounds. Various polymers, such as poly(methyl methacrylate), cyclic olefin polymer, and copolymer as well as poly(dimethylsiloxane) were investigated and compared with respect to achievable LOD and ruggedness against photodamage. To demonstrate the applicability of the technique, the method was also applied to the determination of serotonin and tryptamine in fruit samples. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer

NASA Astrophysics Data System (ADS)

Oh, JiSoo; Oh, Jong Sik; Sung, DaIn; Yim, SoonMin; Song, SeungWon; Yeom, GeunYoung

2017-03-01

Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O2 plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3 0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of 10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9˚) could be fabricated.

Extraction of phenolic compounds from extra virgin olive oil by a natural deep eutectic solvent: Data on UV absorption of the extracts.

PubMed

Paradiso, Vito Michele; Clemente, Antonia; Summo, Carmine; Pasqualone, Antonella; Caponio, Francesco

2016-09-01

This data article refers to the paper "Towards green analysis of virgin olive oil phenolic compounds: extraction by a natural deep eutectic solvent and direct spectrophotometric detection" [1]. A deep eutectic solvent (DES) based on lactic acid and glucose was used as green solvent for phenolic compounds. Eight standard phenolic compounds were solubilized in the DES. Then, a set of extra virgin olive oil (EVOO) samples (n=65) were submitted to liquid-liquid extraction by the DES. The standard solutions and the extracts were analyzed by UV spectrophotometry. This article reports the spectral data of both the standard solutions and the 65 extracts, as well as the total phenolic content of the corresponding oils, assessed by the Folin-Ciocalteu assay.

Deep ultraviolet semiconductor light sources for sensing and security

NASA Astrophysics Data System (ADS)

Shatalov, Max; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis

2009-09-01

III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) rapidly penetrate into sensing market owing to several advantages over traditional UV sources (i.e. mercury, xenon and deuterium lamps). Small size, a wide choice of peak emission wavelengths, lower power consumption and reduced cost offer flexibility to system integrators. Short emission wavelength offer advantages for gas detection and optical sensing systems based on UV induced fluorescence. Large modulation bandwidth for these devices makes them attractive for frequency-domain spectroscopy. We will review present status of DUV LED technology and discuss recent advances in short wavelength emitters and high power LED lamps.

The opportunity and challenge of spin coat based nanoimprint lithography

NASA Astrophysics Data System (ADS)

Jung, Wooyung; Cho, Jungbin; Choi, Eunhyuk; Lim, Yonghyun; Bok, Cheolkyu; Tsuji, Masatoshi; Kobayashi, Kei; Kono, Takuya; Nakasugi, Tetsuro

2017-03-01

Since multi patterning with spacer was introduced in NAND flash memory1, multi patterning with spacer has been a promising solution to overcome the resolution limit. However, the increase in process cost of multi patterning with spacer must be a serious burden to device manufacturers as half pitch of patterns gets smaller.2, 3 Even though Nano Imprint Lithography (NIL) has been considered as one of strong candidates to avoid cost issue of multi patterning with spacer, there are still negative viewpoints; template damage induced from particles between template and wafer, overlay degradation induced from shear force between template and wafer, and throughput loss induced from dispensing and spreading resist droplet. Jet and Flash Imprint Lithography (J-FIL4, 5, 6) has contributed to throughput improvement, but still has these above problems. J-FIL consists of 5 steps; dispense of resist droplets on wafer, imprinting template on wafer, filling the gap between template and wafer with resist, UV curing, and separation of template from wafer. If dispensing resist droplets by inkjet is replaced with coating resist at spin coater, additional progress in NIL can be achieved. Template damage from particle can be suppressed by thick resist which is spin-coated at spin coater and covers most of particles on wafer, shear force between template and wafer can be minimized with thick resist, and finally additional throughput enhancement can be achieved by skipping dispense of resist droplets on wafer. On the other hand, spin-coat-based NIL has side effect such as pattern collapse which comes from high separation energy of resist. It is expected that pattern collapse can be improved by the development of resist with low separation energy.

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Matsuoka, Yoichi; Seki, Junichi; Nakayama, Takahiro; Nakagawa, Kazuki; Azuma, Hisanobu; Yamamoto, Kiyohito; Sato, Chiaki; Sakai, Fumio; Takabayashi, Yukio; Aghili, Ali; Mizuno, Makoto; Choi, Jin; Jones, Chris E.

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution and in meeting the image placement specification for replica masks.

Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

NASA Astrophysics Data System (ADS)

Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

2011-03-01

Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

Dual Band Deep Ultraviolet AlGaN Photodetectors

NASA Technical Reports Server (NTRS)

Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

2007-01-01

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control

DTIC Science & Technology

2009-02-19

magnesium dopant concentration. A digital micromirror device is introduced to pattern incident UV radiation during InGaN growth, demonstrating that the...magnesium dopant concentration. A digital micromirror device is introduced to pattern incident UV radiation during InGaN growth, demonstrating that the...successful compositional patterning of InGaN using in situ digital micromirror device (DMD) patterning of ultraviolet (UV

Defect reduction of high-density full-field patterns in jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Lovejeet; Luo, Kang; Ye, Zhengmao; Xu, Frank; Haase, Gaddi; Curran, David; LaBrake, Dwayne; Resnick, Douglas; Sreenivasan, S. V.

2011-04-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography (J-FIL) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned resist on the substrate. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high end memory devices. Typical defectivity targets are on the order of 0.10/cm2. This work summarizes the results of defect inspections focusing on two key defect types; random non-fill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. Non-fill defectivity must always be considered within the context of process throughput. The key limiting throughput step in an imprint process is resist filling time. As a result, it is critical to characterize the filling process by measuring non-fill defectivity as a function of fill time. Repeater defects typically have two main sources; mask defects and particle related defects. Previous studies have indicated that soft particles tend to cause non-repeating defects. Hard particles, on the other hand, can cause either resist plugging or mask damage. In this work, an Imprio 500 twenty wafer per hour (wph) development tool was used to study both defect types. By carefully controlling the volume of inkjetted resist, optimizing the drop pattern and controlling the resist fluid front during spreading, fill times of 1.5 seconds were achieved with non-fill defect levels of approximately 1.2/cm2. Longevity runs were used to study repeater defects and a nickel contamination was identified as the key source of particle induced repeater defects.

Study of formation of deep trapping mechanism by UV, beta and gamma irradiated Eu(3+) activated SrY2O4 and Y4Al2O9 phosphors.

PubMed

Dubey, Vikas; Kaur, Jagjeet; Parganiha, Yogita; Suryanarayana, N S; Murthy, K V R

2016-04-01

This paper reports the thermoluminescence properties of Eu(3+) doped different host matrix phosphors (SrY2O4 and Y4Al2O9). The phosphor is prepared by high temperature solid state reaction method. The method is suitable for large scale production and fixed concentration of boric acid using as a flux. The prepared samples were characterized by X-ray diffraction technique and the crystallite size calculated by Scherer's formula. The prepared phosphor characterized by Scanning Electron Microscopic (SEM), Fourier Transform Infrared (FTIR), Energy Dispersive X-ray analysis (EDX), thermoluminescence (TL) and Transmission Electron Microscopic (TEM) techniques. The prepared phosphors for different concentration of Eu(3+) ions were examined by TL glow curve for UV, beta and gamma irradiation. The UV 254nm source used for UV irradiation, Sr(90) source was used for beta irradiation and Co(60) source used for gamma irradiation. SrY2O4:Eu(3+)and Y4Al2O9:Eu(3+) phosphors which shows both higher temperature peaks and lower temperature peaks for UV, beta and gamma irradiation. Here UV irradiated sample shows the formation of shallow trap (surface trapping) and the gamma irradiated sample shows the formation of deep trapping. The estimation of trap formation was evaluated by knowledge of trapping parameters. The trapping parameters such as activation energy, order of kinetics and frequency factor were calculated by peak shape method. Here most of the peak shows second order of kinetics. The effect of gamma, beta and UV exposure on TL studies was also examined and it shows linear response with dose which indicate that the samples may be useful for TL dosimetry. Formation of deep trapping mechanism by UV, beta and gamma irradiated Eu(3+) activated SrY2O4 and Y4Al2O9 phosphors is discussed in this paper. Copyright © 2015 Elsevier Ltd. All rights reserved.

Data fusion for CD metrology: heterogeneous hybridization of scatterometry, CDSEM, and AFM data

NASA Astrophysics Data System (ADS)

Hazart, J.; Chesneau, N.; Evin, G.; Largent, A.; Derville, A.; Thérèse, R.; Bos, S.; Bouyssou, R.; Dezauzier, C.; Foucher, J.

2014-04-01

The manufacturing of next generation semiconductor devices forces metrology tool providers for an exceptional effort in order to meet the requirements for precision, accuracy and throughput stated in the ITRS. In the past years hybrid metrology (based on data fusion theories) has been investigated as a new methodology for advanced metrology [1][2][3]. This paper provides a new point of view of data fusion for metrology through some experiments and simulations. The techniques are presented concretely in terms of equations to be solved. The first point of view is High Level Fusion which is the use of simple numbers with their associated uncertainty postprocessed by tools. In this paper, it is divided into two stages: one for calibration to reach accuracy, the second to reach precision thanks to Bayesian Fusion. From our perspective, the first stage is mandatory before applying the second stage which is commonly presented [1]. However a reference metrology system is necessary for this fusion. So, precision can be improved if and only if the tools to be fused are perfectly matched at least for some parameters. We provide a methodology similar to a multidimensional TMU able to perform this matching exercise. It is demonstrated on a 28 nm node backend lithography case. The second point of view is Deep Level Fusion which works on the contrary with raw data and their combination. In the approach presented here, the analysis of each raw data is based on a parametric model and connections between the parameters of each tool. In order to allow OCD/SEM Deep Level Fusion, a SEM Compact Model derived from [4] has been developed and compared to AFM. As far as we know, this is the first time such techniques have been coupled at Deep Level. A numerical study on the case of a simple stack for lithography is performed. We show strict equivalence of Deep Level Fusion and High Level Fusion when tools are sensitive and models are perfect. When one of the tools can be considered as a reference and the second is biased, High Level Fusion is far superior to standard Deep Level Fusion. Otherwise, only the second stage of High Level Fusion is possible (Bayesian Fusion) and do not provide substantial advantage. Finally, when OCD is equipped with methods for bias detection [5], Deep Level Fusion outclasses the two-stage High Level Fusion and will benefit to the industry for most advanced nodes production.

Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography

NASA Astrophysics Data System (ADS)

Du, Ke; Ding, Junjun; Wathuthanthri, Ishan; Choi, Chang-Hwan

2017-11-01

It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.

Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography.

PubMed

Du, Ke; Ding, Junjun; Wathuthanthri, Ishan; Choi, Chang-Hwan

2017-11-17

It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.

Lithography alternatives meet design style reality: How do they "line" up?

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2016-03-01

Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to set the channel length of select and memory transistors.

300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers.

PubMed

Xuan, Hongwen; Zhao, Zhigang; Igarashi, Hironori; Ito, Shinji; Kakizaki, Kouji; Kobayashi, Yohei

2015-04-20

A narrow-linewidth, high average power deep-ultraviolet (DUV) coherent laser emitting at 193 nm is demonstrated by frequency mixing a Yb-hybrid laser with an Er-fiber laser. The Yb-hybrid laser consists of Yb-fiber lasers and an Yb:YAG amplifier. The average output power of the 193 nm laser is 310 mW at 6 kHz, which corresponds to a pulse energy of 51 μJ. To the best of our knowledge, this is the highest average power and pulse energy ever reported for a narrow-linewidth 193 nm light generated by a combination of solid-state and fiber lasers with frequency mixing. We believe this laser will be beneficial for the application of interference lithography by seeding an injection-locking ArF eximer laser.

Durability to oxygen reactive ion etching enhanced by addition of synthesized bis(trimethylsilyl)phenyl-containing (meth)acrylates in ultraviolet nanoimprint lithography

NASA Astrophysics Data System (ADS)

Ito, Shunya; Sato, Hiroki; Tasaki, Yuhei; Watanuki, Kimihito; Nemoto, Nobukatsu; Nakagawa, Masaru

2016-06-01

We investigated the selection of bis(trimethylsilyl)phenyl-containing (meth)acrylates as additives to improve the durability to oxygen reactive ion etching (O2 RIE) of sub-50 nm imprint resist patterns suitable for bubble-defect-free UV nanoimprinting with a readily condensable gas. 2,5-Bis(2-acryloyloxyethoxy)-1,4-bis(trimethylsilyl)benzene, which has a diacrylate chemical structure similar to that of glycerol 1,3-diglycerolate diacrylate used as a base monomer, and 3-(2-methacryloyloxyethoxy)-1-(hydroxylethoxy)-2-propoxy-3,5-bis(trimethylsilyl)benzene, which has a hydroxy group similar to the base monomer, were synthesized taking into consideration the Ohnishi and ring parameters, and the oxidization of the trimethylsilyl moiety to inorganic species during O2 RIE. The addition of the latter liquid additive to the base monomer decreased etching rate owing to the good miscibility of the additive in the base monomer, while the addition of the former crystalline additive caused phase separation after UV nanoimprinting. The latter additive worked as a compatibilizer to the former additive, which is preferred for etching durability improvement. The coexistence of the additives enabled the fabrication of a 45 nm line-and-space resist pattern by UV nanoimprinting, and its residual layer could be removed by O2 RIE.

Photoionization of radiation-induced traps in quartz and alkali feldspars.

PubMed

Hütt, G; Jaek, I; Vasilchenko, V

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Retrieval of Surface Ozone from UV-MFRSR Irradiances using Deep Learning

NASA Astrophysics Data System (ADS)

Chen, M.; Sun, Z.; Davis, J.; Zempila, M.; Liu, C.; Gao, W.

2017-12-01

High concentration of surface ozone is harmful to humans and plants. USDA UV-B Monitoring and Research Program (UVMRP) uses Ultraviolet (UV) version of Multi-Filter Rotating Shadowband Radiometer (UV-MFRSR) to measure direct, diffuse, and total irradiances every three minutes at seven UV channels (i.e. 300, 305, 311, 317, 325, 332, and 368 nm channels with 2 nm full width at half maximum). Based on the wavelength dependency of aerosol optical depths, there have been plenty of literatures exploring retrieval methods of total column ozone from UV-MFRSR measurements. However, few has explored the retrieval of surface ozone. The total column ozone is the integral of the multiplication of ozone concentration (varying by height and time) and cross section (varying by wavelength and temperature) over height. Because of the distinctive values of ozone cross section in the UV region, the irradiances at seven UV channels have the potential to resolve the ozone concentration at multiple vertical layers. If the UV irradiances at multiple time points are considered together, the uncertainty or the vertical resolution of ozone concentrations can be further improved. In this study, the surface ozone amounts at the UVMRP station located at Billings, Oklahoma are estimated from the adjacent (i.e. within 200 miles) US Environmental Protection Agency (EPA) surface ozone observations using the spatial analysis technique. Then, the (direct normal) irradiances of UVMRP at one or more time points as inputs and the corresponding estimated surface ozone from EPA as outputs are fed into a pre-trained (dense) deep neural network (DNN) to explore the hidden non-linear relationship between them. This process could improve our understanding of their physical/mathematical relationship. Finally, the optimized DNN is tested with the preserved 5% of the dataset, which are not used during training, to verify the relationship.

Ultraviolet Channeling Dynamics in Gaseous Media for X -- Ray Production

NASA Astrophysics Data System (ADS)

McCorkindale, John Charters

The development of a coherent high brightness / short duration X -- ray source has been of considerable interest to the scientific community as well as various industries since the invention of the technology. Possible applications include X -- ray lithography, biological micro-imaging and the probing of molecular and atomic dynamics. One such source under investigation involves the interaction of a high pulsed power KrF UV laser with a noble gas target (krypton or xenon), producing a photon energy from 1 -- 5 keV. Amplification in this regime requires materials with very special properties found in spatially organized hollow atom clusters. One of the driving forces behind X -- ray production is the UV laser. Theoretical analysis shows that above a critical laser power, the formation of a stable plasma channel in the gaseous medium will occur which can act as a guide for the X-ray pulse and co-propagating UV beam. These plasma channels are visualized with a triple pinhole camera, axial and transverse von Hamos spectrometers and a Thomson scattering setup. In order to understand observed channel morphologies, full characterization of the drive laser was achieved using a Transient Grating -- Frequency Resolved Optical Gating (TG-FROG) technique which gives a full temporal representation of the electric field and associated phase of the ultrashort pulse. Insights gleaned from the TG -- FROG data as well as analysis of photodiode diagnostics placed along the UV laser amplification chain provide explanations for the plasma channel morphology and X -- ray output.

Fabrication of a micromold using negative PMER

NASA Astrophysics Data System (ADS)

Kwon, Young A.; Chae, Kyoung-Soo; Jeoung, Dae S.; Kim, Jong Y.; Moon, Sung

2001-10-01

We fabricated a micro mold using UV-lithography process with a novel mold material, negative PMER. Negative PMER(TOK, PMER N-CA3000) is a chemically amplified negative tone photoresist on a novolak resin base. It can be processed using standard equipment such as standard spin coater, baking with ovens or hotplates, and immersion development tools. Good quality resist patterns of up to 36μm thickness were achieved by means of this equipment in a short time. The conditions of this process were pre-exposure bake of 110 degree(s)C/12min, exposure dose of 675mJ/cm2 post-exposure bake of 100 degree(s)C/9min, and development for 10min.

Reverse-absorbance-modulation-optical lithography for optical nanopatterning at low light levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majumder, Apratim, E-mail: apratim.majumder@utah.edu; Wan, Xiaowen; Masid, Farhana

2016-06-15

Absorbance-Modulation-Optical Lithography (AMOL) has been previously demonstrated to be able to confine light to deep sub-wavelength dimensions and thereby, enable patterning of features beyond the diffraction limit. In AMOL, a thin photochromic layer that converts between two states via light exposure is placed on top of the photoresist layer. The long wavelength photons render the photochromic layer opaque, while the short-wavelength photons render it transparent. By simultaneously illuminating a ring-shaped spot at the long wavelength and a round spot at the short wavelength, the photochromic layer transmits only a highly confined beam at the short wavelength, which then exposes themore » underlying photoresist. Many photochromic molecules suffer from a giant mismatch in quantum yields for the opposing reactions such that the reaction initiated by the absorption of the short-wavelength photon is orders of magnitude more efficient than that initiated by the absorption of the long-wavelength photon. As a result, large intensities in the ring-shaped spot are required for deep sub-wavelength nanopatterning. In this article, we overcome this problem by using the long-wavelength photons to expose the photoresist, and the short-wavelength photons to confine the “exposing” beam. Thereby, we demonstrate the patterning of features as thin as λ/4.7 (137 nm for λ = 647 nm) using extremely low intensities (4-30 W/m{sup 2}, which is 34 times lower than that required in conventional AMOL). We further apply a rigorous model to explain our experiments and discuss the scope of the reverse-AMOL process.« less

The MIND PALACE: A Multi-Spectral Imaging and Spectroscopy Database for Planetary Science

NASA Astrophysics Data System (ADS)

Eshelman, E.; Doloboff, I.; Hara, E. K.; Uckert, K.; Sapers, H. M.; Abbey, W.; Beegle, L. W.; Bhartia, R.

2017-12-01

The Multi-Instrument Database (MIND) is the web-based home to a well-characterized set of analytical data collected by a suite of deep-UV fluorescence/Raman instruments built at the Jet Propulsion Laboratory (JPL). Samples derive from a growing body of planetary surface analogs, mineral and microbial standards, meteorites, spacecraft materials, and other astrobiologically relevant materials. In addition to deep-UV spectroscopy, datasets stored in MIND are obtained from a variety of analytical techniques obtained over multiple spatial and spectral scales including electron microscopy, optical microscopy, infrared spectroscopy, X-ray fluorescence, and direct fluorescence imaging. Multivariate statistical analysis techniques, primarily Principal Component Analysis (PCA), are used to guide interpretation of these large multi-analytical spectral datasets. Spatial co-referencing of integrated spectral/visual maps is performed using QGIS (geographic information system software). Georeferencing techniques transform individual instrument data maps into a layered co-registered data cube for analysis across spectral and spatial scales. The body of data in MIND is intended to serve as a permanent, reliable, and expanding database of deep-UV spectroscopy datasets generated by this unique suite of JPL-based instruments on samples of broad planetary science interest.

The Hubble Deep UV Legacy Survey (HDUV)

NASA Astrophysics Data System (ADS)

Montes, Mireia; Oesch, Pascal

2015-08-01

Deep HST imaging has shown that the overall star formation density and UV light density at z>3 is dominated by faint, blue galaxies. Remarkably, very little is known about the equivalent galaxy population at lower redshifts. Understanding how these galaxies evolve across the epoch of peak cosmic star-formation is key to a complete picture of galaxy evolution. Here, we present a new HST WFC3/UVIS program, the Hubble Deep UV (HDUV) legacy survey. The HDUV is a 132 orbit program to obtain deep imaging in two filters (F275W and F336W) over the two CANDELS Deep fields. We will cover ~100 arcmin2 sampling the rest-frame far-UV at z>~0.5, this will provide a unique legacy dataset with exquisite HST multi-wavelength imaging as well as ancillary HST grism NIR spectroscopy for a detailed study of faint, star-forming galaxies at z~0.5-2. The HDUV will enable a wealth of research by the community, which includes tracing the evolution of the FUV luminosity function over the peak of the star formation rate density from z~3 down to z~0.5, measuring the physical properties of sub-L* galaxies, and characterizing resolved stellar populations to decipher the build-up of the Hubble sequence from sub-galactic clumps. This poster provides an overview of the HDUV survey and presents the reduced data products and catalogs which will be released to the community, reaching down to 27.5-28.0 mag at 5 sigma. By directly sampling the rest-frame far-UV at z>~0.5, this will provide a unique legacy dataset with exquisite HST multi-wavelength imaging as well as ancillary HST grism NIR spectroscopy for a detailed study of faint, star-forming galaxies at z~0.5-2. The HDUV will enable a wealth of research by the community, which includes tracing the evolution of the FUV luminosity function over the peak of the star formation rate density from z~3 down to z~0.5, measuring the physical properties of sub-L* galaxies, and characterizing resolved stellar populations to decipher the build-up of the Hubble sequence from sub-galactic clumps. This poster provides an overview of the HDUV survey and presents reduced data products and catalogs which will be released to the community.

UV/Optical Detections of Candidate Tidal Disruption Events by GALEX and CFHTLS

NASA Astrophysics Data System (ADS)

Gezari, S.; Basa, S.; Martin, D. C.; Bazin, G.; Forster, K.; Milliard, B.; Halpern, J. P.; Friedman, P. G.; Morrissey, P.; Neff, S. G.; Schiminovich, D.; Seibert, M.; Small, T.; Wyder, T. K.

2008-04-01

We present two luminous UV/optical flares from the nuclei of apparently inactive early-type galaxies at z = 0.37 and 0.33 that have the radiative properties of a flare from the tidal disruption of a star. In this paper we report the second candidate tidal disruption event discovery in the UV by the GALEX Deep Imaging Survey and present simultaneous optical light curves from the CFHTLS Deep Imaging Survey for both UV flares. The first few months of the UV/optical light curves are well fitted with the canonical t-5/3 power-law decay predicted for emission from the fallback of debris from a tidally disrupted star. Chandra ACIS X-ray observations during the flares detect soft X-ray sources with Tbb = (2-5) × 105 K or Γ > 3 and place limits on hard X-ray emission from an underlying AGN down to LX(2-10 keV) lesssim 1041 ergs s-1. Blackbody fits to the UV/optical spectral energy distributions of the flares indicate peak flare luminosities of gtrsim1044-1045 ergs s-1. The temperature, luminosity, and light curves of both flares are in excellent agreement with emission from a tidally disrupted main-sequence star onto a central black hole of several times 107 M⊙. The observed detection rate of our search over ~2.9 deg2 of GALEX Deep Imaging Survey data spanning from 2003 to 2007 is consistent with tidal disruption rates calculated from dynamical models, and we use these models to make predictions for the detection rates of the next generation of optical synoptic surveys. Some of the data presented herein were obtained at the W. M. Keck Observatory, which is operated as a scientific partnership among the California Institute of Technology, the University of California, and the National Aeronautics and Space Administration. The Observatory was made possible by the generous financial support of the W. M. Keck Foundation.

Campanile Near-Field Probes Fabricated by Nanoimprint Lithography on the Facet of an Optical Fiber

DOE PAGES

Calafiore, Giuseppe; Koshelev, Alexander; Darlington, Thomas P.; ...

2017-05-10

One of the major challenges to the widespread adoption of plasmonic and nano-optical devices in real-life applications is the difficulty to mass-fabricate nano-optical antennas in parallel and reproducible fashion, and the capability to precisely place nanoantennas into devices with nanometer-scale precision. In this study, we present a solution to this challenge using the state-of-the-art ultraviolet nanoimprint lithography (UV-NIL) to fabricate functional optical transformers onto the core of an optical fiber in a single step, mimicking the 'campanile' near-field probes. Imprinted probes were fabricated using a custom-built imprinter tool with co-axial alignment capability with sub < 100 nm position accuracy, followedmore » by a metallization step. Scanning electron micrographs confirm high imprint fidelity and precision with a thin residual layer to facilitate efficient optical coupling between the fiber and the imprinted optical transformer. The imprinted optical transformer probe was used in an actual NSOM measurement performing hyperspectral photoluminescence mapping of standard fluorescent beads. The calibration scans confirmed that imprinted probes enable sub-diffraction limited imaging with a spatial resolution consistent with the gap size. This novel nano-fabrication approach promises a low-cost, high-throughput, and reproducible manufacturing of advanced nano-optical devices.« less

Campanile Near-Field Probes Fabricated by Nanoimprint Lithography on the Facet of an Optical Fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calafiore, Giuseppe; Koshelev, Alexander; Darlington, Thomas P.

One of the major challenges to the widespread adoption of plasmonic and nano-optical devices in real-life applications is the difficulty to mass-fabricate nano-optical antennas in parallel and reproducible fashion, and the capability to precisely place nanoantennas into devices with nanometer-scale precision. In this study, we present a solution to this challenge using the state-of-the-art ultraviolet nanoimprint lithography (UV-NIL) to fabricate functional optical transformers onto the core of an optical fiber in a single step, mimicking the 'campanile' near-field probes. Imprinted probes were fabricated using a custom-built imprinter tool with co-axial alignment capability with sub < 100 nm position accuracy, followedmore » by a metallization step. Scanning electron micrographs confirm high imprint fidelity and precision with a thin residual layer to facilitate efficient optical coupling between the fiber and the imprinted optical transformer. The imprinted optical transformer probe was used in an actual NSOM measurement performing hyperspectral photoluminescence mapping of standard fluorescent beads. The calibration scans confirmed that imprinted probes enable sub-diffraction limited imaging with a spatial resolution consistent with the gap size. This novel nano-fabrication approach promises a low-cost, high-throughput, and reproducible manufacturing of advanced nano-optical devices.« less

UV plasmonic device for sensing ethanol and acetone

NASA Astrophysics Data System (ADS)

Honda, Mitsuhiro; Ichikawa, Yo; Rozhin, Alex G.; Kulinich, Sergei A.

2018-01-01

In the present study, we demonstrate efficient detection of volatile organic vapors with improved sensitivity, exploiting the localized surface plasmon resonance of indium nanograins in the UV range (UV-LSPR). The sensitivity of deep-UV-LSPR measurements toward ethanol was observed to be 0.004 nm/ppm, which is 10 times higher than that of a previously reported visible-LSPR device based on Ag nanoprisms [Sensors 11, 8643 (2011)]. Although practical issues such as improving detection limits are still remaining, the results of the present study suggest that the new approach based on UV-LSPR may open new avenues to the detection of organic molecules in solid, liquid, and gas phases using plasmonic sensors.

Capillary Force Lithography for Cardiac Tissue Engineering

PubMed Central

Macadangdang, Jesse; Lee, Hyun Jung; Carson, Daniel; Jiao, Alex; Fugate, James; Pabon, Lil; Regnier, Michael; Murry, Charles; Kim, Deok-Ho

2014-01-01

Cardiovascular disease remains the leading cause of death worldwide1. Cardiac tissue engineering holds much promise to deliver groundbreaking medical discoveries with the aims of developing functional tissues for cardiac regeneration as well as in vitro screening assays. However, the ability to create high-fidelity models of heart tissue has proven difficult. The heart’s extracellular matrix (ECM) is a complex structure consisting of both biochemical and biomechanical signals ranging from the micro- to the nanometer scale2. Local mechanical loading conditions and cell-ECM interactions have recently been recognized as vital components in cardiac tissue engineering3-5. A large portion of the cardiac ECM is composed of aligned collagen fibers with nano-scale diameters that significantly influences tissue architecture and electromechanical coupling2. Unfortunately, few methods have been able to mimic the organization of ECM fibers down to the nanometer scale. Recent advancements in nanofabrication techniques, however, have enabled the design and fabrication of scalable scaffolds that mimic the in vivo structural and substrate stiffness cues of the ECM in the heart6-9. Here we present the development of two reproducible, cost-effective, and scalable nanopatterning processes for the functional alignment of cardiac cells using the biocompatible polymer poly(lactide-co-glycolide) (PLGA)8 and a polyurethane (PU) based polymer. These anisotropically nanofabricated substrata (ANFS) mimic the underlying ECM of well-organized, aligned tissues and can be used to investigate the role of nanotopography on cell morphology and function10-14. Using a nanopatterned (NP) silicon master as a template, a polyurethane acrylate (PUA) mold is fabricated. This PUA mold is then used to pattern the PU or PLGA hydrogel via UV-assisted or solvent-mediated capillary force lithography (CFL), respectively15,16. Briefly, PU or PLGA pre-polymer is drop dispensed onto a glass coverslip and the PUA mold is placed on top. For UV-assisted CFL, the PU is then exposed to UV radiation (λ = 250-400 nm) for curing. For solvent-mediated CFL, the PLGA is embossed using heat (120 °C) and pressure (100 kPa). After curing, the PUA mold is peeled off, leaving behind an ANFS for cell culture. Primary cells, such as neonatal rat ventricular myocytes, as well as human pluripotent stem cell-derived cardiomyocytes, can be maintained on the ANFS2. PMID:24962161

Magnetron Sputtering as a Fabrication Method for a Biodegradable Fe32Mn Alloy

PubMed Central

Jurgeleit, Till; Quandt, Eckhard; Zamponi, Christiane

2017-01-01

Biodegradable metals are a topic of great interest and Fe-based materials are prominent examples. The research task is to find a suitable compromise between mechanical, corrosion, and magnetic properties. For this purpose, investigations regarding alternative fabrication processes are important. In the present study, magnetron sputtering technology in combination with UV-lithography was used in order to fabricate freestanding, microstructured Fe32Mn films. To adjust the microstructure and crystalline phase composition with respect to the requirements, the foils were post-deposition annealed under a reducing atmosphere. The microstructure and crystalline phase composition were investigated by scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction. Furthermore, for mechanical characterization, uniaxial tensile tests were performed. The in vitro corrosion rates were determined by electrochemical polarization measurements in pseudo-physiological solution. Additionally, the magnetic properties were measured via vibrating sample magnetometry. The foils showed a fine-grained structure and a tensile strength of 712 MPa, which is approximately a factor of two higher compared to the sputtered pure Fe reference material. The yield strength was observed to be even higher than values reported in literature for alloys with similar composition. Against expectations, the corrosion rates were found to be lower in comparison to pure Fe. Since the annealed foils exist in the austenitic, and antiferromagnetic γ-phase, an additional advantage of the FeMn foils is the low magnetic saturation polarization of 0.003 T, compared to Fe with 1.978 T. This value is even lower compared to the SS 316L steel acting as a gold standard for implants, and thus enhances the MRI compatibility of the material. The study demonstrates that magnetron sputtering in combination with UV-lithography is a new concept for the fabrication of already in situ geometrically structured FeMn-based foils with promising mechanical and magnetic properties. PMID:29057837

Deep UV Luminosity Functions at the Infall Region of the Coma Cluster

NASA Technical Reports Server (NTRS)

Hammer, D. M.; Hornschemeier, A. E.; Salim, S.; Smith, R.; Jenkins, L.; Mobasher, B.; Miller, N.; Ferguson, H.

2011-01-01

We have used deep GALEX observations at the infall region of the Coma cluster to measure the faintest UV luminosity functions (LFs) presented for a rich galaxy cluster thus far. The Coma UV LFs are measured to M(sub uv) = -10.5 in the GALEX FUV and NUV bands, or 3.5 mag fainter than previous studies, and reach the dwarf early-type galaxy population in Coma for the first time. The Schechter faint-end slopes (alpha approximately equal to -1.39 in both GALEX bands) are shallower than reported in previous Coma UV LF studies owing to a flatter LF at faint magnitudes. A Gaussian-plus-Schechter model provides a slightly better parametrization of the UV LFs resulting in a faint-end slope of alpha approximately equal to -1.15 in both GALEX bands. The two-component model gives faint-end slopes shallower than alpha = -1 (a turnover) for the LFs constructed separately for passive and star forming galaxies. The UV LFs for star forming galaxies show a turnover at M(sub UV) approximately equal to -14 owing to a deficit of dwarf star forming galaxies in Coma with stellar masses below M(sub *) = 10(sup 8) solar mass. A similar turnover is identified in recent UV LFs measured for the Virgo cluster suggesting this may be a common feature of local galaxy clusters, whereas the field UV LFs continue to rise at faint magnitudes. We did not identify an excess of passive galaxies as would be expected if the missing dwarf star forming galaxies were quenched inside the cluster. In fact, the LFs for both dwarf passive and star forming galaxies show the same turnover at faint magnitudes. We discuss the possible origin of the missing dwarf star forming galaxies in Coma and their expected properties based on comparisons to local field galaxies.

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alden, D.; Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin; Guo, W.

Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor deposition growth of AlN in combination with laser interference lithography was developed for making a nanoscale lateral polarity structure (LPS) with domain size down to 600 nm. The Al-polar and N-polar domains were identified by wet etching the periodic LPS in a potassium hydroxide solution and subsequent scanning electron microscopy (SEM) characterization. Fully coalesced and well-defined vertical interfaces between the adjacent domains were established by cross-sectional SEM. AlN LPSs were mechanically polished and surface roughness with amore » root mean square value of ∼10 nm over a 90 μm × 90 μm area was achieved. 3.8 μm wide and 650 nm thick AlN LPS waveguides were fabricated. The achieved domain sizes, surface roughness, and waveguides are suitable for second harmonic generation in the UVC spectrum.« less

Fundamental Characteristics of Deep-UV Light-Emitting Diodes and Their Application To Control Foodborne Pathogens

PubMed Central

Shin, Joo-Yeon; Kim, Soo-Ji; Kim, Do-Kyun

2015-01-01

Low-pressure mercury UV (LP-UV) lamps have long been used for bacterial inactivation, but due to certain disadvantages, such as the possibility of mercury leakage, deep-UV-C light-emitting diodes (DUV-LEDs) for disinfection have recently been of great interest as an alternative. Therefore, in this study, we examined the basic spectral properties of DUV-LEDs and the effects of UV-C irradiation for inactivating foodborne pathogens, including Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes, on solid media, as well as in water. As the temperature increased, DUV-LED light intensity decreased slightly, whereas LP-UV lamps showed increasing intensity until they reached a peak at around 30°C. As the irradiation dosage and temperature increased, E. coli O157:H7 and S. Typhimurium experienced 5- to 6-log-unit reductions. L. monocytogenes was reduced by over 5 log units at a dose of 1.67 mJ/cm2. At 90% relative humidity (RH), only E. coli O157:H7 experienced inactivation significantly greater than at 30 and 60% RH. In a water treatment study involving a continuous system, 6.38-, 5.81-, and 3.47-log-unit reductions were achieved in E. coli O157:H7, S. Typhimurium, and L. monocytogenes, respectively, at 0.5 liter per minute (LPM) and 200 mW output power. The results of this study suggest that the use of DUV-LEDs may compensate for the drawbacks of using LP-UV lamps to inactivate foodborne pathogens. PMID:26162872

Limiting factors in the production of deep microstructures

NASA Astrophysics Data System (ADS)

Tolfree, David W. L.; O'Neill, William; Tunna, Leslie; Sutcliffe, Christopher

1999-10-01

Microsystems increasingly require precision deep microstructures that can be cost-effectively designed and manufactured. New products must be able to meet the demands of the rapidly growing markets for microfluidic, micro- optical and micromechanical devices in industrial sectors which include chemicals, pharmaceuticals, biosciences, medicine and food. The realization of such products, first requires an effective process to design and manufacture prototypes. Two process methods used for the fabrication of high aspect-ratio microstructures are based on X-ray beam lithography with electroforming processes and direct micromachining with a frequency multiplied Nd:YAG laser using nanosecond pulse widths. Factors which limit the efficiency and precision obtainable using such processes are important parameters when deciding on the best fabrication method to use. A basic microstructure with narrow channels suitable for a microfluidic mixer have been fabricated using both these techniques and comparisons made of the limitations and suitability of the processes in respect of fast prototyping and manufacture or working devices.

EDITORIAL: Enhancing nanolithography Enhancing nanolithography

NASA Astrophysics Data System (ADS)

Demming, Anna

2012-01-01

Lithography was invented in late 18th century Bavaria by an ambitious young playwright named Alois Senefelder. Senefelder experimented with stone, wax, water and ink in the hope of finding a way of reproducing text so that he might financially gain from a wider distribution of his already successful scripts. His discovery not only facilitated the profitability of his plays, but also provided the world with an affordable printing press that would ultimately democratize the dissemination of art, knowledge and literature. Since Senefelder, experiments in lithography have continued with a range of innovations including the use of electron beams and UV that allow increasingly higher-resolution features [1, 2]. Applications for this have now breached the limits of paper printing into the realms of semiconductor and microelectronic mechanical systems technology. In this issue, researchers demonstrate a technique for fabricating periodic features in poly(3,4-ethylene dioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) [3]. Their method combines field enhancements from silica nanospheres with laser-interference lithography to provide a means of patterning a polymer that has the potential to open the market of low-end, high-volume microelectronics. Laser-interference lithography has already been used successfully in patterning. Researchers in Korea used laser-interference lithography to generate stamps for imprinting a two-dimensional photonic crystal structure into green light emitting diodes (LEDs) [4]. The imprinted patterns comprised depressions 100 nm deep and 180 nm wide with a periodicity of 295 nm. In comparison with unpatterned LEDs, the intensity of photoluminescence was enhanced by a factor of seven in the LEDs that had the photonic crystal structures imprinted in them. The potential of exploiting field enhancements around nanostructures for new technologies has also attracted a great deal of attention. Researchers in the USA and Australia have used the field enhancements around an array of nanorods to improve the operation of a Schottky diode device operating in reverse bias. The diode is used for gas sensing, an application that also benefits from the high surface to volume ratio of nanostructures for gas adsorption [5]. Enhancing the electric field is also hugely advantageous for Raman spectroscopy. The vibrational modes probed with Raman spectroscopy provide a useful, highly distinctive molecular signature but the signal is weak. An array of nanoneedles fabricated by researchers in China and Japan has demonstrated controllable and repeatable enhancements to Raman signals of 108 [6]. Researchers in the UK have demonstrated how the field enhancements resulting from the plasmonic properties of metal nanoparticles can be tuned to carefully manipulate their effect on the fluorescence intensity, lifetime and Raman signal from nearby fluorophores. They also successfully decoupled the effects on radiative and non-radiative decay and shed light on the hot spots present in surface-enhanced Raman spectroscopy measurements. Plasmonics has enormous potential in the field of optoelectronics. In recognition of the fertility of research in this field, Nanotechnology will publish a special issue on plasmonics in optoeletronics later this year. The work of Suman Das and colleagues in the USA and Germany reported in this issue combines both field enhancements and laser-interference lithography to impart a nanoporous structure to a polymer with high industrial potential. PEDOT-PSS has high conductivity and is also moderately transparent, making it eligible for transparent conductors in electroluminescent devices, conducting layers in capacitors, photovoltaic cells and sensors. It has also been considered recently for bioelectronic applications, in particular neuronal cell signalling and neural interfaces, as a result of its electronic and ionic conductivity. The researchers irradiated a monolayer of silica nanospheres on a film of PEDOT-PSS with interfering laser beams. The interference gave rise to a periodic line-like pattern in the intensity distribution of the incident field. In addition, the silica spheres cause enhancements to the incident field that result in the formation of patterns of craters, cavities and holes in the PEDOT-PSS. The researchers confirm the viability of their fabrication process with Mie scattering theory calculations. The technique has a number of advantages over previous methods for creating nanoporous structures in PEDOT-PSS, including efficiency, high-resolution and low cost as a clean room is not required. The stage is set for more technological developments as innovations in lithography and combinations with other techniques continue to play a leading role in high-resolution patterning and fabrication at the nanoscale. References [1] Grigorescu A E and Hagen C W 2009 Nanotechnology 20 292001 [2] Lin B J 1975 J. Vac. Sci. Technol. 12 1317-20 [3] Yuan D, Lasagni A, Hendricks J L, Martin D C and Das S 2012 Nanotechnology 23 015304 [4] Kim S H, Lee K-D, Kim J-Y, Kwon M-K and Park S-J 2007 Nanotechnology 18 055306 [5] Yu J, Ippolito S J, Wlodarski W, Strano M and Kalantar-Zadeh K 2010 Nanotechnology 21 265502 [6] Yang Y, Tanemura M, Huang Z, Jiang D, Li Z-Y, Huang Y-P, Kawamura G, Yamaguchi K and Nogami M 2010 Nanotechnology 21 325701 [7] Cade N I, Ritman-Meer T, Kwakwa K A and Richards D 2009 Nanotechnology 20 285201

Planar techniques for fabricating X-ray diffraction gratings and zone plates

NASA Technical Reports Server (NTRS)

Smith, H. I.; Anderson, E. H.; Hawryluk, A. M.; Schattenburg, M. L.

1984-01-01

The state of current planar techniques in the fabrication of Fresnel zone plates and diffraction gratings is reviewed. Among the fabrication techniques described are multilayer resist techniques; scanning electron beam lithography; and holographic lithography. Consideration is also given to: X-ray lithography; ion beam lithography; and electroplating. SEM photographs of the undercut profiles obtained in a type AZ 135OB photoresistor by holographic lithography are provided.

CUVE - Cubesat UV Experiment: Unveil Venus' UV Absorber with Cubesat UV Mapping Spectrometer

NASA Astrophysics Data System (ADS)

Cottini, V.; Aslam, S.; D'Aversa, E.; Glaze, L.; Gorius, N.; Hewagama, T.; Ignatiev, N.; Piccioni, G.

2017-09-01

Our Venus mission concept Cubesat UV Experiment (CUVE) is one of ten proposals selected for funding by the NASA PSDS3 Program - Planetary Science Deep Space SmallSat Studies. CUVE concept is to insert a CubeSat spacecraft into a Venusian orbit and perform remote sensing of the UV spectral region using a high spectral resolution point spectrometer to resolve UV molecular bands, observe nightglow, and characterize the unidentified main UV absorber. The UV spectrometer is complemented by an imaging UV camera with multiple bands in the UV absorber main band range for contextual imaging. CUVE Science Objectives are: the nature of the "Unknown" UV-absorber; the abundances and distributions of SO2 and SO at and above Venus's cloud tops and their correlation with the UV absorber; the atmospheric dynamics at the cloud tops, structure of upper clouds and wind measurements from cloud-tracking; the nightglow emissions: NO, CO, O2. This mission will therefore be an excellent platform to study Venus' cloud top atmospheric properties where the UV absorption drives the planet's energy balance. CUVE would complement past, current and future Venus missions with conventional spacecraft, and address critical science questions cost effectively.

Highly efficient color filter array using resonant Si3N4 gratings.

PubMed

Uddin, Mohammad Jalal; Magnusson, Robert

2013-05-20

We demonstrate the design and fabrication of a highly efficient guided-mode resonant color filter array. The device is designed using numerical methods based on rigorous coupled-wave analysis and is patterned using UV-laser interferometric lithography. It consists of a 60-nm-thick subwavelength silicon nitride grating along with a 105-nm-thick homogeneous silicon nitride waveguide on a glass substrate. The fabricated device exhibits blue, green, and red color response for grating periods of 274, 327, and 369 nm, respectively. The pixels have a spectral bandwidth of ~12 nm with efficiencies of 94%, 96%, and 99% at the center wavelength of blue, green, and red color filter, respectively. These are higher efficiencies than reported in the literature previously.

DNA Photo Lithography with Cinnamate-based Photo-Bio-Nano-Glue

NASA Astrophysics Data System (ADS)

Feng, Lang; Li, Minfeng; Romulus, Joy; Sha, Ruojie; Royer, John; Wu, Kun-Ta; Xu, Qin; Seeman, Nadrian; Weck, Marcus; Chaikin, Paul

2013-03-01

We present a technique to make patterned functional surfaces, using a cinnamate photo cross-linker and photolithography. We have designed and modified a complementary set of single DNA strands to incorporate a pair of opposing cinnamate molecules. On exposure to 360nm UV, the cinnamate makes a highly specific covalent bond permanently linking only the complementary strands containing the cinnamates. We have studied this specific and efficient crosslinking with cinnamate-containing DNA in solution and on particles. UV addressability allows us to pattern surfaces functionally. The entire surface is coated with a DNA sequence A incorporating cinnamate. DNA strands A'B with one end containing a complementary cinnamated sequence A' attached to another sequence B, are then hybridized to the surface. UV photolithography is used to bind the A'B strand in a specific pattern. The system is heated and the unbound DNA is washed away. The pattern is then observed by thermo-reversibly hybridizing either fluorescently dyed B' strands complementary to B, or colloids coated with B' strands. Our techniques can be used to reversibly and/or permanently bind, via DNA linkers, an assortment of molecules, proteins and nanostructures. Potential applications range from advanced self-assembly, such as templated self-replication schemes recently reported, to designed physical and chemical patterns, to high-resolution multi-functional DNA surfaces for genetic detection or DNA computing.

UV plasmonic enhancement through three dimensional nano-cavity antenna array in aluminum

NASA Astrophysics Data System (ADS)

Mao, Jieying; Stevenson, Peter; Montanaric, Danielle; Wang, Yunshan; Shumaker-Parry, Jennifer S.; Harris, Joel M.; Blair, Steve

2017-08-01

Metallic nanostructure can enhance fluorescence through excited surface plasmons which increase the local field as well as improve its quantum efficiency. When coupling to cavity resonance with proper gap dimension, gap hot spots can be generated to interact with fluorescence at their excitation/emission region in UV. A 3D nano-cavity antenna array in Aluminum has been conducted to generate local hot spot resonant at fluorescence emission resonance. Giant field enhancement has been achieved through coupling fundamental resonance modes of nanocavity into surface plasmons polaritons (SPPs). In this work, two distinct plasmonic structure of 3D resonant cavity nanoantenna has been studied and its plasmonic response has been scaled down to the UV regime through finite-difference-time-domain (FDTD) method. Two different strategies for antenna fabrication will be conducted to obtain D-coupled Dots-on-Pillar Antenna array (D2PA) through Focus Ion Beam (FIB) and Cap- Hole Pair Antenna array (CHPA) through nanosphere template lithography (NTL). With proper optimization of the structures, D2PA and CHPA square array with 280nm pitch have achieved distinct enhancement at fluorophore emission wavelength 350nm and excitation wavelength 280nm simultaneously. Maximum field enhancement can reach 20 and 65 fold in the gap of D2PA and CHPA when light incident from substrate, which is expected to greatly enhance fluorescent quantum efficiency that will be confirmed in fluorescence lifetime measurement.

Microfluidic devices fabricated in poly(methyl methacrylate) using hot-embossing with integrated sampling capillary and fiber optics for fluorescence detection.

PubMed

Qi, Shize; Liu, Xuezhu; Ford, Sean; Barrows, James; Thomas, Gloria; Kelly, Kevin; McCandless, Andrew; Lian, Kun; Goettert, Jost; Soper, Steven A

2002-05-01

High-aspect-ratio microstructures have been prepared using hot-embossing techniques in poly(methyl methacrylate) (PMMA) from Ni-based molding dies prepared using LIGA (Lithographie, Galvanoformung, Abformung). Due to the small amount of mask undercutting associated with X-ray lithography and the high energy X-ray beam used during photoresist patterning, deep structures with sharp and smooth sidewalls have been prepared. The Ni-electroforms produced devices with minimal replication errors using hot-embossing at a turn around time of approximately 5 min per device. In addition, several different polymers (with different glass transition temperatures) could be effectively molded with these Ni-electroforms and many devices (>300) molded with the same master without any noticeable degradation. The PMMA devices consisted of deep and narrow channels for insertion of a capillary for the automated electrokinetic loading of sample into the microfluidic device and also, a pair of optical fibers for shuttling laser light to the detection zone and collecting the resulting emission for fluorescence analysis. Electrophoretic separations of double-stranded DNA ladders Phi X174 digested with Hae III) were performed with fluorescence detection accomplished using near-IR excitation. It was found that the narrow width of the channels did not contribute significantly to electrophoretic zone broadening and the plate numbers generated in the extended length separation channel allowed sorting of the 271/281 base pair fragments associated with this sizing ladder when electrophoresed in methylcellulose entangled polymer solutions. The dual fiber detector produced sub-attomole detection limits with the entire detector, including laser source, electronics and photon transducer, situated in a single box measuring 3'' x 10" x 14".

Focusing properties of x-ray polymer refractive lenses from SU-8 resist layer

NASA Astrophysics Data System (ADS)

Snigirev, Anatoly A.; Snigireva, Irina; Drakopoulos, Michael; Nazmov, Vladimir; Reznikova, Elena; Kuznetsov, Sergey; Grigoriev, Maxim; Mohr, Jurgen; Saile, Volker

2003-12-01

Compound refractive lenses printed in Al and Be are becoming the key X-ray focusing and imaging components of beamline optical layouts at the 3rd generation synchrotron radiation sources. Recently proposed planar optical elements based on Si, diamond etc. may substantially broaden the spectrum of the refractive optics applicability. Planar optics has focal distances ranging from millimeters to tens of meters offering nano- and micro-focusing lenses, as well as beam condensers and collimators. Here we promote deep X-ray lithography and LIGA-type techniques to create high aspect-ratio lens structures for different optical geometries. Planar X-ray refractive lenses were manufactured in 1 mm thick SU-8 negative resist layer by means of deep synchrotron radiation lithography. The focusing properties of lenses were studied at ID18F and BM5 beamlines at the ESRF using monochromatic radiation in the energy range of 10 - 25 keV. By optimizing lens layout, mask making and resist processing, lenses of good quality were fabricated. The resolution of about 270 nm (FWHM) with gain in the order of 300 was measured at 14 keV. In-line holography of B-fiber was realized in imaging and projection mode with a magnification of 3 and 20, respectively. Submicron features of the fiber were clearly resolved. A radiation stability test proved that the fabricated lenses don't change focusing characteristics after dose of absorbed X-ray radiation of about 2 MJ/cm3. The unique radiation stability along with the high effficiency of SU8 lenses opens wide range of their synchrotron radiation applications such as microfocusing elements, condensers and collimators.

The research progress of metrological 248nm deep ultraviolent microscope inspection device

NASA Astrophysics Data System (ADS)

Wang, Zhi-xin; Li, Qi; Gao, Si-tian; Shi, Yu-shu; Li, Wei; Li, Shi

2016-01-01

In lithography process, the precision of wafer pattern to a large extent depends on the geometric dimensioning and tolerance of photomasks when accuracy of lithography aligner is certain. Since the minimum linewidth (Critical Dimension) of the aligner exposing shrinks to a few tens of nanometers in size, one-tenth of tolerance errors in fabrication may lead to microchip function failure, so it is very important to calibrate these errors of photomasks. Among different error measurement instruments, deep ultraviolent (DUV) microscope because of its high resolution, as well as its advantages compared to scanning probe microscope restrained by measuring range and scanning electron microscope restrained by vacuum environment, makes itself the most suitable apparatus. But currently there is very few DUV microscope adopting 248nm optical system, means it can attain 80nm resolution; furthermore, there is almost no DUV microscope possessing traceable calibration capability. For these reason, the National Institute of Metrology, China is developing a metrological 248nm DUV microscope mainly consists of DUV microscopic components, PZT and air supporting stages as well as interferometer calibration framework. In DUV microscopic component, the Köhler high aperture transmit condenser, DUV splitting optical elements and PMT pinhole scanning elements are built. In PZT and air supporting stages, a novel PZT actuating flexural hinge stage nested separate X, Y direction kinematics and a friction wheel driving long range air supporting stage are researched. In interferometer framework, a heterodyne multi-pass interferometer measures XY axis translation and Z axis rotation through Zerodur mirror mounted on stage. It is expected the apparatus has the capability to calibrate one dimensional linewidths and two dimensional pitches ranging from 200nm to 50μm with expanded uncertainty below 20nm.

Deep UV Raman spectroscopy for planetary exploration: The search for in situ organics

NASA Astrophysics Data System (ADS)

Abbey, William J.; Bhartia, Rohit; Beegle, Luther W.; DeFlores, Lauren; Paez, Veronica; Sijapati, Kripa; Sijapati, Shakher; Williford, Kenneth; Tuite, Michael; Hug, William; Reid, Ray

2017-07-01

Raman spectroscopy has emerged as a powerful, non-contact, non-destructive technique for detection and characterization of in situ organic compounds. Excitation using deep UV wavelengths (< 250 nm), in particular, offers the benefits of spectra obtained in a largely fluorescence-free region while taking advantage of signal enhancing resonance Raman effects for key classes of organic compounds, such as the aromatics. In order to demonstrate the utility of this technique for planetary exploration and astrobiological applications, we interrogated three sets of samples using a custom built Raman instrument equipped with a deep UV (248.6 nm) excitation source. The sample sets included: (1) the Mojave Mars Simulant, a well characterized basaltic sample used as an analog for Martian regolith, in which we detected ∼0.04 wt% of condensed carbon; (2) a suite of organic (aromatic hydrocarbons, carboxylic acids, and amino acids) and astrobiologically relevant inorganic (sulfates, carbonates, phosphates, nitrates and perchlorate) standards, many of which have not had deep UV Raman spectra in the solid phase previously reported in the literature; and (3) Mojave Mars Simulant spiked with a representative selection of these standards, at a concentration of 1 wt%, in order to investigate natural 'real world' matrix effects. We were able to resolve all of the standards tested at this concentration. Some compounds, such as the aromatic hydrocarbons, have especially strong signals due to resonance effects even when present in trace amounts. Phenanthrene, one of the aromatic hydrocarbons, was also examined at a concentration of 0.1 wt% and even at this level was found to have a strong signal-to-noise ratio. It should be noted that the instrument utilized in this study was designed to approximate the operation of a 'fieldable' spectrometer in order to test astrobiological applications both here on Earth as well as for current and future planetary missions. It is the foundation of SHERLOC, an arm mounted instrument recently selected by NASA to fly on the next rover mission to Mars in 2020.

DEEP ULTRAVIOLET LUMINOSITY FUNCTIONS AT THE INFALL REGION OF THE COMA CLUSTER

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammer, D. M.; Hornschemeier, A. E.; Jenkins, L.

2012-02-01

We have used deep GALEX observations at the infall region of the Coma cluster to measure the faintest ultraviolet (UV) luminosity functions (LFs) presented for a rich galaxy cluster thus far. The Coma UV LFs are measured to M{sub UV} = -10.5 in the GALEX FUV and NUV bands, or 3.5 mag fainter than previous studies, and reach the dwarf early-type galaxy population in Coma for the first time. The Schechter faint-end slopes ({alpha} Almost-Equal-To -1.39 in both GALEX bands) are shallower than reported in previous Coma UV LF studies owing to a flatter LF at faint magnitudes. A Gaussian-plus-Schechtermore » model provides a slightly better parameterization of the UV LFs resulting in a faint-end slope of {alpha} Almost-Equal-To -1.15 in both GALEX bands. The two-component model gives faint-end slopes shallower than {alpha} = -1 (a turnover) for the LFs constructed separately for passive and star-forming galaxies. The UV LFs for star-forming galaxies show a turnover at M{sub UV} Almost-Equal-To -14 owing to a deficit of dwarf star-forming galaxies in Coma with stellar masses below M{sub *} = 10{sup 8} M{sub Sun }. A similar turnover is identified in recent UV LFs measured for the Virgo cluster suggesting this may be a common feature of local galaxy clusters, whereas the field UV LFs continue to rise at faint magnitudes. We did not identify an excess of passive galaxies as would be expected if the missing dwarf star-forming galaxies were quenched inside the cluster. In fact, the LFs for both dwarf passive and star-forming galaxies show the same turnover at faint magnitudes. We discuss the possible origin of the missing dwarf star-forming galaxies in Coma and their expected properties based on comparisons to local field galaxies.« less

Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-07-01

Extreme ultraviolet lithography (EUVL, λ=13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high-power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity [S or best energy (BE)], and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (line width roughness, resolution and sensitivity trade-off) among these parameters for chemically amplified resists (CARs). We present early proof-of-principle results for a multiexposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a "Photosensitized Chemically Amplified Resist™" (PSCAR™). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV-flood exposure (λ=365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR, and EL high-performance requirements with the aim of resolving line space (L/S) features for the 7- and 5-nm logic node [16- and 13-nm half-pitch (HP), respectively] for HVM. Several CARs were additionally found to be well resolved down to 12- and 11-nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and below 16-nm HP resolution, demonstrating the need for alternative resist solutions at 13-nm resolution and below. EUV interference lithography (IL) has provided and continues to provide a simple yet powerful platform for academic and industrial research, enabling the characterization and development of resist materials before commercial EUV exposure tools become available. Our experiments have been performed at the EUV-IL set-up in the Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI).

Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and below 16 nm HP resolution, demonstrating the need for alternative resist solutions at 13 nm resolution and below. EUV interference lithography (IL) has provided and continues to provide a simple yet powerful platform for academic and industrial research enabling the characterization and development of new resist materials before commercial EUV exposure tools become available. Our experiments have been performed at the EUV-IL set-up in the Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI).

Nanoimprint system development and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Hiura, Hiromi; Takabayashi, Yukio; Takashima, Tsuneo; Emoto, Keiji; Choi, Jin; Schumaker, Phil

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. For imprint lithography, recent attention has been given to the areas of overlay, throughput, defectivity, and mask replication. This paper reviews progress in these critical areas. Recent demonstrations have proven that mix and match overlay of less than 5nm can achieved. Further reductions require a higher order correction system. Modeling and experimental data are presented which provide a path towards reducing the overlay errors to less than 3nm. Throughput is mainly impacted by the fill time of the relief images on the mask. Improvement in resist materials provides a solution that allows 15 wafers per hour per station, or a tool throughput of 60 wafers per hour. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. Finally, on the mask side, a new replication tool, the FPA-1100NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control and IP accuracy. In particular, by improving the specifications on the mask chuck, residual errors of only 1nm can be realized.

Payload crew interface design criteria and techniques. Task 1: Inflight operations and training for payloads. [space shuttles

NASA Technical Reports Server (NTRS)

Carmean, W. D.; Hitz, F. R.

1976-01-01

Guidelines are developed for use in control and display panel design for payload operations performed on the aft flight deck of the orbiter. Preliminary payload procedures are defined. Crew operational concepts are developed. Payloads selected for operational simulations were the shuttle UV optical telescope (SUOT), the deep sky UV survey telescope (DUST), and the shuttle UV stellar spectrograph (SUSS). The advanced technology laboratory payload consisting of 11 experiments was selected for a detailed evaluation because of the availability of operational data and its operational complexity.

Fundamental Characteristics of Deep-UV Light-Emitting Diodes and Their Application To Control Foodborne Pathogens.

PubMed

Shin, Joo-Yeon; Kim, Soo-Ji; Kim, Do-Kyun; Kang, Dong-Hyun

2016-01-01

Low-pressure mercury UV (LP-UV) lamps have long been used for bacterial inactivation, but due to certain disadvantages, such as the possibility of mercury leakage, deep-UV-C light-emitting diodes (DUV-LEDs) for disinfection have recently been of great interest as an alternative. Therefore, in this study, we examined the basic spectral properties of DUV-LEDs and the effects of UV-C irradiation for inactivating foodborne pathogens, including Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes, on solid media, as well as in water. As the temperature increased, DUV-LED light intensity decreased slightly, whereas LP-UV lamps showed increasing intensity until they reached a peak at around 30°C. As the irradiation dosage and temperature increased, E. coli O157:H7 and S. Typhimurium experienced 5- to 6-log-unit reductions. L. monocytogenes was reduced by over 5 log units at a dose of 1.67 mJ/cm(2). At 90% relative humidity (RH), only E. coli O157:H7 experienced inactivation significantly greater than at 30 and 60% RH. In a water treatment study involving a continuous system, 6.38-, 5.81-, and 3.47-log-unit reductions were achieved in E. coli O157:H7, S. Typhimurium, and L. monocytogenes, respectively, at 0.5 liter per minute (LPM) and 200 mW output power. The results of this study suggest that the use of DUV-LEDs may compensate for the drawbacks of using LP-UV lamps to inactivate foodborne pathogens. Copyright © 2015, American Society for Microbiology. All Rights Reserved.

Prospects of DUV OoB suppression techniques in EUV lithography

NASA Astrophysics Data System (ADS)

Park, Chang-Min; Kim, Insung; Kim, Sang-Hyun; Kim, Dong-Wan; Hwang, Myung-Soo; Kang, Soon-Nam; Park, Cheolhong; Kim, Hyun-Woo; Yeo, Jeong-Ho; Kim, Seong-Sue

2014-04-01

Though scaling of source power is still the biggest challenge in EUV lithography (EUVL) technology era, CD and overlay controls for transistor's requirement are also precondition of adopting EUVL in mass production. Two kinds of contributors are identified as risks for CDU and Overlay: Infrared (IR) and deep ultraviolet (DUV) out of band (OOB) radiations from laser produced plasma (LPP) EUV source. IR from plasma generating CO2 laser that causes optics heating and wafer overlay error is well suppressed by introducing grating on collector to diffract IR off the optical axis and is the effect has been confirmed by operation of pre-production tool (NXE3100). EUV and DUV OOB which are reflected from mask black boarder (BB) are root causes of EUV-specific CD error at the boundaries of exposed shots which would result in the problem of CDU out of spec unless sufficiently suppressed. Therefore, control of DUV OOB reflection from the mask BB is one of the key technologies that must be developed prior to EUV mass production. In this paper, quantitative assessment on the advantage and the disadvantage of potential OOB solutions will be discussed. EUV and DUV OOB impacts on wafer CDs are measured from NXE3100 & NXE3300 experiments. Significant increase of DUV OOB impact on CD from NXE3300 compared with NXE3100 is observed. There are three ways of technology being developed to suppress DUV OOB: spectral purity filter (SPF) as a scanner solution, multi-layer etching as a solution on mask, and resist top-coating as a process solution. PROs and CONs of on-scanner, on-mask, and on-resist solution for the mass production of EUV lithography will be discussed.

Silylated Acid Hardened Resist [SAHR] Technology: Positive, Dry Developable Deep UV Resists

NASA Astrophysics Data System (ADS)

Thackeray, James W.; Bohland, John F.; Pavelchek, , Edward K.; Orsula, George W.; McCullough, Andrew W.; Jones, Susan K.; Bobbio, Stephen M.

1990-01-01

This paper describes continuing efforts in the development of Acid Hardened Resist (AHR) systems for use in deep UV photolithography. The Silylated AHR (SAHR) process treats a highly absorbing resist, such as XP-8928, with trimethylsilyldiethylamine. The exposed, crosslinked areas show virtually no reactivity with the silylating agent, and the unexposed areas incorporate 10 to 12% by weight silicon in the film. The silicon appears to incorporate from the exterior in a constant concentration, consistent with Case II diffusion. Subsequent dry etching leads to a positive tone image. The contrast is 5, and the photospeed is ~10 mJ/cm2. Resolution of 0.5 μm line/space pairs has been demonstrated, although substantial proximity effects are encountered.

Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination

NASA Astrophysics Data System (ADS)

Mondal, Sandip

2018-04-01

This experiment demonstrates the electrical behaviors of fully solution processed HfO2(MOS) in presence of different optical illumination. The capacitance voltage measurement was performed at frequency of 100 kHz with a DC gate sweep voltage of ±5V (with additional AC voltage of 100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is found that there is a large shift in flatband voltage of 120mV due presence of white light during the CV measurement. However there is negligible change in flatband voltage (30mV) has been observed due to illumination of deep UV light.

Deep cytoplasmic rearrangements in ventralized Xenopus embryos

NASA Technical Reports Server (NTRS)

Brown, E. E.; Denegre, J. M.; Danilchik, M. V.

1993-01-01

Following fertilization in Xenopus, dramatic rearrangements of the egg cytoplasm relocalize maternally synthesized egg components. During the first cell cycle the vegetal yolk mass rotates relative to the egg surface, toward the sperm entry point (SEP) (J. P. Vincent, G. F. Oster, and J. C. Gerhart, 1986, Dev. Biol. 113, 484-500), while concomitant deep cytoplasmic rearrangements occur in the animal hemisphere (M. V. Danilchik and J. M. Denegre, 1991, Development 111, 845-856). In this paper we examine the role of vegetal yolk mass rotation in producing the animal cytoplasmic rearrangements. We inhibited rotation by uv-irradiating embryos during the first cell cycle, a treatment that yields an extremely ventralized phenotype. Both uv-irradiated embryos and unirradiated control embryos show cytoplasmic rearrangements in the animal hemisphere during the first cell cycle. Cytoplasmic rearrangements on the SEP side of the embryo associated with the path of the sperm pronucleus, plus a swirl on the anti-SEP (dorsal) side, are seen, whether or not yolk mass rotation has occurred. This result suggests a role for the expanding sperm aster in directing animal hemisphere cytoplasmic movements. In unirradiated control embryos the anti-SEP (dorsal) swirl is larger than that in uv-irradiated embryos and often extends into the vegetal hemisphere, consistent with the animal cytoplasm having been pulled dorsally and vegetally by the sliding vegetal yolk mass. Thus the yolk mass rotation may normally enhance the dorsalward cytoplasmic movement, begun by the sperm aster, enough to induce normal axis formation. We extended our observations of unirradiated control and uv-irradiated embryos through early cleavages. The vegetal extent of the anti-SEP (dorsal) swirl pattern seen in control embryos persists through the early cleavage period, such that labeled animal cytoplasm extends deep into dorsal third-tier blastomeres at the 32-cell stage. Significantly, in uv-irradiated embryos, which have not undergone vegetal rotation, most of this labeled material remains more equatorial.

Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode

NASA Astrophysics Data System (ADS)

Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

2017-01-01

A novel UV transparent conducting films based on Sb2O3/Ag/Sb2O3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq-1). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm-2. These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics.

Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode.

PubMed

Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

2017-01-25

A novel UV transparent conducting films based on Sb 2 O 3 /Ag/Sb 2 O 3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq -1 ). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm -2 . These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics.

Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode

PubMed Central

Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

2017-01-01

A novel UV transparent conducting films based on Sb2O3/Ag/Sb2O3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq−1). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm−2. These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics. PMID:28120888

Combining nanofluidics and plasmonics for single molecule detection

NASA Astrophysics Data System (ADS)

West, Melanie M.

Single molecule detection is limited by the small scattering cross-section of molecules which leads to weak optical signals that can be obscured by background noise. The combination of plasmonics and nanofluidics in an integrated nano-device has the potential to provide the signal enhancement necessary for the detection of single molecules. The purpose of this investigation was to optimize the fabrication of an optofluidic device that integrates a nanochannel with a plasmonic bowtie antenna. The fluidic structure of the device was fabricated using UV-nanoimprint lithography, and the gold plasmonic antennas were fabricated using a shadow evaporation and lift-off process. The effect of electron beam lithography doses on the resolution of antenna-nanochannel configurations was studied to minimize antenna gap size while maintaining the integrity of the imprinted features. The smallest antenna gap size that was achieved was 46 nm. The antennas were characterized using dark field spectroscopy to find the resonance shift, which indicated the appropriate range for optical signal enhancement. The dark field scattering results showed antennas with a broad and well-defined resonance shift that ranged from 650--800 nm. The Raman scattering results showed the highest enhancement factor (EF = 2) for antennas with an "inverted configuration," which involved having the triangles of the antenna facing back-to-back rather than the more conventional tip-to-tip bowtie arrangement.

Single Layer Broadband Anti-Reflective Coatings for Plastic Substrates Produced by Full Wafer and Roll-to-Roll Step-and-Flash Nano-Imprint Lithography

PubMed Central

Burghoorn, Marieke; Roosen-Melsen, Dorrit; de Riet, Joris; Sabik, Sami; Vroon, Zeger; Yakimets, Iryna; Buskens, Pascal

2013-01-01

Anti-reflective coatings (ARCs) are used to lower the reflection of light on the surface of a substrate. Here, we demonstrate that the two main drawbacks of moth eye-structured ARCs—i.e., the lack of suitable coating materials and a process for large area, high volume applications—can be largely eliminated, paving the way for cost-efficient and large-scale production of durable moth eye-structured ARCs on polymer substrates. We prepared moth eye coatings on polymethylmethacrylate (PMMA) and polycarbonate using wafer-by-wafer step-and-flash nano-imprint lithography (NIL). The reduction in reflection in the visible field achieved with these coatings was 3.5% and 4.0%, respectively. The adhesion of the coating to both substrates was good. The moth eye coating on PMMA demonstrated good performance in three prototypical accelerated ageing tests. The pencil hardness of the moth eye coatings on both substrates was <4B, which is less than required for most applications and needs further optimization. Additionally, we developed a roll-to-roll UV NIL pilot scale process and produced moth eye coatings on polyethylene terephthalate (PET) at line speeds up to two meters per minute. The resulting coatings showed a good replication of the moth eye structures and, consequently, a lowering in reflection of the coated PET of 3.0%. PMID:28788301

Fabrication of a cost-effective polymer nanograting as a disposable plasmonic biosensor using nanoimprint lithography

NASA Astrophysics Data System (ADS)

Mohapatra, Saswat; Kumari, Sudha; Moirangthem, Rakesh S.

2017-07-01

A simple and cost-effective flexible plasmonic sensor is developed using a gold-coated polymer nanograting structure prepared via soft UV nanoimprint lithography. The sub-wavelength nanograting patterns of digital versatile discs were used as a template to prepare the polydimethylsiloxane stamp. The plasmonic sensing substrate was achieved after coating a gold thin film on top of the imprinted nanograting sample. The surface plasmon resonance (SPR) modes excited on the gold-coated nanograting structure appeared as a dip in the reflectance spectrum measured at normal incidence under white light illumination in the ambient air medium. Electromagnetic simulation based on the finite element method was carried out to analyze the excited SPR modes. The simulated result shows very close agreement with the experimental data. The performance of the sensor with respect to changing the surrounding dielectric medium yields a bulk refractive index sensitivity of 788  ±  21 nm per refractive index unit. Further, label-free detection of proteins using a plasmonic sensing substrate was demonstrated by monitoring specific interactions between bovine serum albumin (BSA) and anti-BSA proteins, which gave a detection limit of 123 pg mm-2 with respect to target anti-BSA protein binding. Thus, our proposed plasmonic sensor has potential for the development of an economical and highly sensitive label-free optical biosensing device for biomedical applications.

Fabrication and characterization of microstructures created in thermally deposited arsenic trisulfide by multiphoton lithography

NASA Astrophysics Data System (ADS)

Schwarz, Casey M.; Grabill, Chris N.; Richardson, Gerald D.; Labh, Shreya; Lewis, Anna M.; Vyas, Aadit; Gleason, Benn; Rivero-Baleine, Clara; Richardson, Kathleen A.; Pogrebnyakov, Alexej; Mayer, Theresa S.; Kuebler, Stephen M.

2017-04-01

A detailed study of multiphoton lithography (MPL) in arsenic trisulfide (As2S3) films and the effects on nanoscale morphology, chemical networking, and the appearance of the resulting features by the chemical composition, deposition rate, etch processing, and inclusion of an antireflection (AR) layer of As2Se3 between the substrate and the As2S3 layer is reported. MPL was used to photo-pattern nanostructured arrays in single- and multilayer films. The variation in chemical composition for laser-exposed, UV-exposed, and unexposed films is correlated with the etch response, nanostructure formation, and deposition conditions. Reflection of the focused beam at the substrate back into the film produces standing wave interference that modulates the exposure with distance from the substrate and produces nanobead structures. The interference and the modulation can be controlled by the addition of an AR layer of As2Se3 deposited between the substrate and the As2S3 film. Relative to structures produced in a single-layer As2S3 film having no AR layer, photo-patterning in the multilayer As2S3-on-As2Se3 film yields pillar-shaped structures that are closer to the targeted shape and are narrower (120 versus 320 nm), more uniform, and better adhering to the substrate. Processing methods are demonstrated for fabricating large-area arrays with diffractive optical function.

A thermal microjet system with tapered micronozzles fabricated by inclined UV lithography for transdermal drug delivery

NASA Astrophysics Data System (ADS)

Yoon, Yong-Kyu; Park, Jung-Hwan; Lee, Jeong-Woo; Prausnitz, Mark R.; Allen, Mark G.

2011-02-01

Transdermal drug delivery can be enabled by various methods that increase the permeability of the skin's outer barrier of stratum corneum, including skin exposure to heat and chemical enhancers, such as ethanol. Combining these approaches for the first time, in this study we designed a microdevice consisting of an array of microchambers filled with ethanol that is vaporized using an integrated microheater and ejected through a micronozzle contacting the skin surface. In this way, we hypothesize that the hot ethanol vapor can increase skin permeability upon contacting the skin surface. The tapered micronozzle and the microchamber designed for this application were realized using proximity-mode inclined rotational ultraviolet lithography, which facilitates easy fabrication of complex three-dimensional structures, convenient integration with other functional layers, low fabrication cost, and mass production. The resulting device had a micronozzle with an orifice inner and outer diameter of 220 and 320 µm, respectively, and an extruded height of 250 µm. When the microchamber was filled with an ethanol gel and activated, the resulting ethanol vapor jet increased the permeability of human cadaver epidermis to a model compound, calcein, by approximately 17 times, which is attributed to thermal and chemical disruption of stratum corneum structure. This thermal microjet system can serve as a tool not only for transdermal drug delivery, but also for a variety of biomedical applications.

Fabrication of high aspect ratio tungsten nanostructures on ultrathin c-Si membranes for extreme UV applications

NASA Astrophysics Data System (ADS)

Delachat, F.; Le Drogoff, B.; Constancias, C.; Delprat, S.; Gautier, E.; Chaker, M.; Margot, J.

2016-01-01

In this work, we demonstrate a full process for fabricating high aspect ratio diffraction optics for extreme ultraviolet lithography. The transmissive optics consists in nanometer scale tungsten patterns standing on flat, ultrathin (100 nm) and highly transparent (>85% at 13.5 nm) silicon membranes (diameter of 1 mm). These tungsten patterns were achieved using an innovative pseudo-Bosch etching process based on an inductively coupled plasma ignited in a mixture of SF6 and C4F8. Circular ultra-thin Si membranes were fabricated through a state-of-the-art method using direct-bonding with thermal difference. The silicon membranes were sputter-coated with a few hundred nanometers (100-300 nm) of stress-controlled tungsten and a very thin layer of chromium. Nanoscale features were written in a thin resist layer by electron beam lithography and transferred onto tungsten by plasma etching of both the chromium hard mask and the tungsten layer. This etching process results in highly anisotropic tungsten features at room temperature. The homogeneity and the aspect ratio of the advanced pattern transfer on the membranes were characterized with scanning electron microscopy after focus ion beam milling. An aspect ratio of about 6 for 35 nm size pattern is successfully obtained on a 1 mm diameter 100 nm thick Si membrane. The whole fabrication process is fully compatible with standard industrial semiconductor technology.

Compensation for Lithography Induced Process Variations during Physical Design

NASA Astrophysics Data System (ADS)

Chin, Eric Yiow-Bing

This dissertation addresses the challenge of designing robust integrated circuits in the deep sub micron regime in the presence of lithography process variability. By extending and combining existing process and circuit analysis techniques, flexible software frameworks are developed to provide detailed studies of circuit performance in the presence of lithography variations such as focus and exposure. Applications of these software frameworks to select circuits demonstrate the electrical impact of these variations and provide insight into variability aware compact models that capture the process dependent circuit behavior. These variability aware timing models abstract lithography variability from the process level to the circuit level and are used to estimate path level circuit performance with high accuracy with very little overhead in runtime. The Interconnect Variability Characterization (IVC) framework maps lithography induced geometrical variations at the interconnect level to electrical delay variations. This framework is applied to one dimensional repeater circuits patterned with both 90nm single patterning and 32nm double patterning technologies, under the presence of focus, exposure, and overlay variability. Studies indicate that single and double patterning layouts generally exhibit small variations in delay (between 1--3%) due to self compensating RC effects associated with dense layouts and overlay errors for layouts without self-compensating RC effects. The delay response of each double patterned interconnect structure is fit with a second order polynomial model with focus, exposure, and misalignment parameters with 12 coefficients and residuals of less than 0.1ps. The IVC framework is also applied to a repeater circuit with cascaded interconnect structures to emulate more complex layout scenarios, and it is observed that the variations on each segment average out to reduce the overall delay variation. The Standard Cell Variability Characterization (SCVC) framework advances existing layout-level lithography aware circuit analysis by extending it to cell-level applications utilizing a physically accurate approach that integrates process simulation, compact transistor models, and circuit simulation to characterize electrical cell behavior. This framework is applied to combinational and sequential cells in the Nangate 45nm Open Cell Library, and the timing response of these cells to lithography focus and exposure variations demonstrate Bossung like behavior. This behavior permits the process parameter dependent response to be captured in a nine term variability aware compact model based on Bossung fitting equations. For a two input NAND gate, the variability aware compact model captures the simulated response to an accuracy of 0.3%. The SCVC framework is also applied to investigate advanced process effects including misalignment and layout proximity. The abstraction of process variability from the layout level to the cell level opens up an entire new realm of circuit analysis and optimization and provides a foundation for path level variability analysis without the computationally expensive costs associated with joint process and circuit simulation. The SCVC framework is used with slight modification to illustrate the speedup and accuracy tradeoffs of using compact models. With variability aware compact models, the process dependent performance of a three stage logic circuit can be estimated to an accuracy of 0.7% with a speedup of over 50,000. Path level variability analysis also provides an accurate estimate (within 1%) of ring oscillator period in well under a second. Another significant advantage of variability aware compact models is that they can be easily incorporated into existing design methodologies for design optimization. This is demonstrated by applying cell swapping on a logic circuit to reduce the overall delay variability along a circuit path. By including these variability aware compact models in cell characterization libraries, design metrics such as circuit timing, power, area, and delay variability can be quickly assessed to optimize for the correct balance of all design metrics, including delay variability. Deterministic lithography variations can be easily captured using the variability aware compact models described in this dissertation. However, another prominent source of variability is random dopant fluctuations, which affect transistor threshold voltage and in turn circuit performance. The SCVC framework is utilized to investigate the interactions between deterministic lithography variations and random dopant fluctuations. Monte Carlo studies show that the output delay distribution in the presence of random dopant fluctuations is dependent on lithography focus and exposure conditions, with a 3.6 ps change in standard deviation across the focus exposure process window. This indicates that the electrical impact of random variations is dependent on systematic lithography variations, and this dependency should be included for precise analysis.

Large-area metallic photonic lattices for military applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luk, Ting Shan

2007-11-01

In this project we developed photonic crystal modeling capability and fabrication technology that is scaleable to large area. An intelligent optimization code was developed to find the optimal structure for the desired spectral response. In terms of fabrication, an exhaustive survey of fabrication techniques that would meet the large area requirement was reduced to Deep X-ray Lithography (DXRL) and nano-imprint. Using DXRL, we fabricated a gold logpile photonic crystal in the <100> plane. For the nano-imprint technique, we fabricated a cubic array of gold squares. These two examples also represent two classes of metallic photonic crystal topologies, the connected networkmore » and cermet arrangement.« less

X-ray Full Field Microscopy at 30 keV

NASA Astrophysics Data System (ADS)

Marschall, F.; Last, A.; Simon, M.; Kluge, M.; Nazmov, V.; Vogt, H.; Ogurreck, M.; Greving, I.; Mohr, J.

2014-04-01

In our X-ray full field microscopy experiments, we demonstrated a resolution better than 260 nm over the entire field of view of 80 μm × 80 μm at 30 keV. Our experimental setup at PETRA III, P05, had a length of about 5 m consisting of an illumination optics, an imaging lens and a detector. For imaging, we used a compound refractive lens (CLR) consisting of mr-L negative photo resist, which was fabricated by deep X-ray lithography. As illumination optics, we choose a refractive rolled X-ray prism lens, which was adapted to the numerical aperture of the imaging lens.

Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji, E-mail: nozaki@ee.uec.ac.jp

A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visiblemore » blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found to be rich in oxygen and deficient in zinc.« less

Dopantless Diodes for Efficient Mid/deep UV LEDs and Lasers - Topic 4.2 Optoelectronics

DTIC Science & Technology

2017-09-12

Week, Santa Barbara, CA, “Polarization hole engineering in deep- ultraviolet nanowire LEDs”, ATM Sarwar, Santino Carnevale, Thomas Kent, Brelon May...Electronic Materials Conference, Santa Barbara, California, “ Engineering the polarization hole doping of graded nanowire ultraviolet LEDs integrated on...Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering Publication Type: Thesis or Dissertation

The Introduction and Early Use of Lithography in the United States.

ERIC Educational Resources Information Center

Barnhill, Georgia B.

This paper discusses the use of lithography in the United States in the early 1800s. Highlights include: the development of lithography in Germany between 1796 and 1798; early expectations for lithography; competition against the existing technology for the production of images--relief prints and copper-plate engravings; examples of 18th-century…

Data Compression for Maskless Lithography Systems: Architecture, Algorithms and Implementation

DTIC Science & Technology

2008-05-19

Data Compression for Maskless Lithography Systems: Architecture, Algorithms and Implementation Vito Dai Electrical Engineering and Computer Sciences...servers or to redistribute to lists, requires prior specific permission. Data Compression for Maskless Lithography Systems: Architecture, Algorithms and...for Maskless Lithography Systems: Architecture, Algorithms and Implementation Copyright 2008 by Vito Dai 1 Abstract Data Compression for Maskless

Improving the CD linearity and proximity performance of photomasks written on the Sigma7500-II DUV laser writer through embedded OPC

NASA Astrophysics Data System (ADS)

Österberg, Anders; Ivansen, Lars; Beyerl, Angela; Newman, Tom; Bowhill, Amanda; Sahouria, Emile; Schulze, Steffen

2007-10-01

Optical proximity correction (OPC) is widely used in wafer lithography to produce a printed image that best matches the design intent while optimizing CD control. OPC software applies corrections to the mask pattern data, but in general it does not compensate for the mask writer and mask process characteristics. The Sigma7500-II deep-UV laser mask writer projects the image of a programmable spatial light modulator (SLM) using partially coherent optics similar to wafer steppers, and the optical proximity effects of the mask writer are in principle correctable with established OPC methods. To enhance mask patterning, an embedded OPC function, LinearityEqualize TM, has been developed for the Sigma7500- II that is transparent to the user and which does not degrade mask throughput. It employs a Calibre TM rule-based OPC engine from Mentor Graphics, selected for the computational speed necessary for mask run-time execution. A multinode cluster computer applies optimized table-based CD corrections to polygonized pattern data that is then fractured into an internal writer format for subsequent data processing. This embedded proximity correction flattens the linearity behavior for all linewidths and pitches, which targets to improve the CD uniformity on production photomasks. Printing results show that the CD linearity is reduced to below 5 nm for linewidths down to 200 nm, both for clear and dark and for isolated and dense features, and that sub-resolution assist features (SRAF) are reliably printed down to 120 nm. This reduction of proximity effects for main mask features and the extension of the practical resolution for SRAFs expands the application space of DUV laser mask writing.

Photochemical conversion of tin-oxo cage compounds studied using hard x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Zhang, Yu; Haitjema, Jarich; Liu, Xiaomeng; Johansson, Fredrik; Lindblad, Andreas; Castellanos, Sonia; Ottosson, Niklas; Brouwer, Albert M.

2017-03-01

Several metal-containing molecular inorganic materials are currently considered as photoresists for extreme ultraviolet lithography (EUVL). This is primarily due to their high EUV absorption cross section and small building block size, properties which potentially allow both high sensitivity and resolution as well as low line-edge roughness. The photochemical reaction mechanisms that allow these kinds of materials to function as photoresists, however, are still poorly understood. As a step in this direction, we here discuss photochemical reactions upon deep UV (DUV) irradiation of a model negative-tone EUV photoresist material, namely the well-defined molecular tin-oxo cage compound [(SnR)12O14(OH)6]X2 (R = organic group; X = anion) which is spin coated to thin layers of 20 nm. The core electronic structure (Sn 3d, O 1s and C 1s) of fresh and DUV exposed films were then investigated using synchrotron radiationbased hard X-ray photoelectron spectroscopy (HAXPES). This method provides information about the structure and chemical state of the respective atoms in the material. We performed a comparative HAXPES study of the composition of the tin-oxo cage compound [(SnR)12O14(OH)6](OH)2, either fresh directly after spin-coated vs. DUV-exposed materials under either ambient condition or under a dry N2 atmosphere. Different chemical oxidation states and concentrations of atoms and atom types in the fresh and exposed films were found. We further found that the chemistry resulting from exposure in air and N2 is strikingly different, clearly illustrating the influence of film-gas interactions on the (photo)chemical processes that eventually determine the photoresist. Finally, a mechanistic hypothesis for the basic DUV photoreactions in molecular tin-oxo cages is proposed.

Predicting the Shifts of Absorption Maxima of Azulene Derivatives Using Molecular Modeling and ZINDO CI Calculations of UV-Vis Spectra

ERIC Educational Resources Information Center

Patalinghug, Wyona C.; Chang, Maharlika; Solis, Joanne

2007-01-01

The deep blue color of azulene is drastically changed by the addition of substituents such as CH[subscript 3], F, or CHO. Computational semiempirical methods using ZINDO CI are used to model azulene and azulene derivatives and to calculate their UV-vis spectra. The calculated spectra are used to show the trends in absorption band shifts upon…

Unraveling the mechanism of ultraviolet-induced optical gating in Zn1-x Mg x O nanocrystal solid solution field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Park, Byoungnam

2018-03-01

We report ultraviolet (UV)-induced optical gating in a Zn1-x Mg x O nanocrystal solid solution (NCSS) field effect transistor (FET) through a systematic study in which UV-induced charge transport properties are probed as a function of Mg composition. Change in the electrical properties of Zn1-x Mg x O NCSS associated with electronic traps is investigated by field effect-modulated current-voltage characteristic curves in the dark and under illumination. Under UV illumination, significant threshold voltage shift to a more negative value in an n-channel Zn1-x Mg x O NCSS FET is observed. Importantly, as the Mg composition increases, the effect of UV illumination on the threshold voltage shift is alleviated. We found that threshold voltage shift as a function of Mg composition in the dark and under illumination is due to difference in the deep trap density in the Zn1-x Mg x O NCSS. This is supported by Mg composition dependent photoluminescence intensity in the visible range and reduced FET mobility with Mg addition. The presence of the deep traps and the corresponding trap energy levels in the Zn1-x Mg x O NCSS are ensured by photoelectron spectroscopy in air.

Mapper: high throughput maskless lithography

NASA Astrophysics Data System (ADS)

Kuiper, V.; Kampherbeek, B. J.; Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Boers, J.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.

2009-01-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. A new platform has been designed and built which contains a 300 mm wafer stage, a wafer handler and an electron beam column with 110 parallel electron beams. This manuscript describes the first patterning results with this 300 mm platform.

Immersion lithography defectivity analysis at DUV inspection wavelength

NASA Astrophysics Data System (ADS)

Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

2007-03-01

Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

Manipulation of heat-diffusion channel in laser thermal lithography.

PubMed

Wei, Jingsong; Wang, Yang; Wu, Yiqun

2014-12-29

Laser thermal lithography is a good alternative method for forming small pattern feature size by taking advantage of the structural-change threshold effect of thermal lithography materials. In this work, the heat-diffusion channels of laser thermal lithography are first analyzed, and then we propose to manipulate the heat-diffusion channels by inserting thermal conduction layers in between channels. Heat-flow direction can be changed from the in-plane to the out-of-plane of the thermal lithography layer, which causes the size of the structural-change threshold region to become much smaller than the focused laser spot itself; thus, nanoscale marks can be obtained. Samples designated as "glass substrate/thermal conduction layer/thermal lithography layer (100 nm)/thermal conduction layer" are designed and prepared. Chalcogenide phase-change materials are used as thermal lithography layer, and Si is used as thermal conduction layer to manipulate heat-diffusion channels. Laser thermal lithography experiments are conducted on a home-made high-speed rotation direct laser writing setup with 488 nm laser wavelength and 0.90 numerical aperture of converging lens. The writing marks with 50-60 nm size are successfully obtained. The mark size is only about 1/13 of the focused laser spot, which is far smaller than that of the light diffraction limit spot of the direct laser writing setup. This work is useful for nanoscale fabrication and lithography by exploiting the far-field focusing light system.

Spatial and seasonal changes in optical properties of autochthonous and allochthonous chromophoric dissolved organic matter in a stratified mountain lake.

PubMed

Bracchini, Luca; Dattilo, Arduino Massimo; Hull, Vincent; Loiselle, Steven Arthur; Nannicini, Luciano; Picchi, Maria Pia; Ricci, Maso; Santinelli, Chiara; Seritti, Alfredo; Tognazzi, Antonio; Rossi, Claudio

2010-03-01

In this study, we present results on seasonal and spatial changes in CDOM absorption and fluorescence (fCDOM) in a deep mountain lake (Salto Lake, Italy). A novel approach was used to describe the shape of CDOM absorption between 250-700 nm (distribution of the spectral slope, S(lambda)) and a new fluorescence ratio is used to distinguish between humic and amino acid-like components. Solar ultraviolet irradiance, dissolved organic carbon (DOC), DOM fluorescence and absorption measurements were analysed and compared to other physicochemical parameters. We show that in the UV-exposed mixed layer: (i) fluorescence by autochthonous amino acid-like CDOM, (ii) values of S(lambda) across UV-C and UV-B wavebands increased during the summer months, whereas (i) average molar absorption coefficient and (ii) fluorescence by allochthonous humic CDOM decreased. In the unexposed deep layer of the water column (and in the entire water column in winter), humic-like CDOM presented high values of molar absorption coefficients and low values of S(lambda). UV attenuation coefficients correlated with both chlorophyll a concentrations and CDOM absorption. In agreement with changes in CDOM, minimal values in UV attenuation were found in summer. The S(lambda) curve was used as a signature of the mixture between photobleached and algal-derived CDOM with respect to the unexposed chromophoric dissolved compounds in this thermal stratified lake. Furthermore, S(lambda) curves were useful to distinguish between low and high molecular weight CDOM.

Development of Room Temperature Excitonic Lasing From ZnO and MgZnO Thin Film Based Metal-Semiconductor-Metal Devices

NASA Astrophysics Data System (ADS)

Suja, Mohammad Zahir Uddin

Room temperature excitonic lasing is demonstrated and developed by utilizing metal-semiconductor-metal devices based on ZnO and MgZnO materials. At first, Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films and the best conductivity is achieved with a high hole concentration of 1.54x1018 cm-3, a low resistivity of 0.6 O cm and a moderate mobility of 6.65 cm2 V -1 s-1 at room temperature. Metal oxide semiconductor (MOS) capacitor devices have been fabricated on the Cu-doped ZnO films and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as XRD, XPS, Raman and absorption are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. To overcome the stability issue of p-type ZnO film, alternate devices other than p-n junction has been developed. Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing. Our results suggest that plasmon-enhanced ZnO MSM random lasers can become a competitive candidate of efficient ultraviolet light sources. Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this thesis, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29 33 A/cm2 are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.

The capability of lithography simulation based on MVM-SEM® system

NASA Astrophysics Data System (ADS)

Yoshikawa, Shingo; Fujii, Nobuaki; Kanno, Koichi; Imai, Hidemichi; Hayano, Katsuya; Miyashita, Hiroyuki; Shida, Soichi; Murakawa, Tsutomu; Kuribara, Masayuki; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hara, Daisuke; Pang, Linyong

2015-10-01

The 1Xnm technology node lithography is using SMO-ILT, NTD or more complex pattern. Therefore in mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask feature. One key Technology of mask manufacture is defect verification to use aerial image simulator or other printability simulation. AIMS™ Technology is excellent correlation for the wafer and standards tool for defect verification however it is difficult for verification over hundred numbers or more. We reported capability of defect verification based on lithography simulation with a SEM system that architecture and software is excellent correlation for simple line and space.[1] In this paper, we use a SEM system for the next generation combined with a lithography simulation tool for SMO-ILT, NTD and other complex pattern lithography. Furthermore we will use three dimension (3D) lithography simulation based on Multi Vision Metrology SEM system. Finally, we will confirm the performance of the 2D and 3D lithography simulation based on SEM system for a photomask verification.

Extreme-UV lithography vacuum chamber zone seal

DOEpatents

Haney, Steven J.; Herron, Donald Joe; Klebanoff, Leonard E.; Replogle, William C.

2001-01-01

Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

Extreme-UV lithography vacuum chamber zone seal

DOEpatents

Haney, Steven J.; Herron, Donald Joe; Klebanoff, Leonard E.; Replogle, William C.

2003-04-08

Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

Extreme-UV lithography vacuum chamber zone seal

DOEpatents

Haney, Steven J.; Herron, Donald Joe; Klebanoff, Leonard E.; Replogle, William C.

2003-04-15

Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

Laser fabrication of diffractive optical elements based on detour-phase computer-generated holograms for two-dimensional Airy beams.

PubMed

Călin, Bogdan-Ştefăniţă; Preda, Liliana; Jipa, Florin; Zamfirescu, Marian

2018-02-20

We have designed, fabricated, and tested an amplitude diffractive optical element for generation of two-dimensional (2D) Airy beams. The design is based on a detour-phase computer-generated hologram. Using laser ablation of metallic films, we obtained a 2  mm×2  mm diffractive optical element with a pixel of 5  μm×5  μm and demonstrated a fast, cheap, and reliable fabrication process. This device can modulate 2D Airy beams or it can be used as a UV lithography mask to fabricate a series of phase holograms for higher energy efficiency. Tests according to the premise and an analysis of the transverse profile and propagation are presented.

Soft Polymers for Building up Small and Smallest Blood Supplying Systems by Stereolithography

PubMed Central

Meyer, Wolfdietrich; Engelhardt, Sascha; Novosel, Esther; Elling, Burkhard; Wegener, Michael; Krüger, Hartmut

2012-01-01

Synthesis of a homologous series of photo-polymerizable α,ω-polytetrahydrofuranether-diacrylate (PTHF-DA) resins is described with characterization by NMR, GPC, DSC, soaking and rheometrical measurements. The curing speeds of the resins are determined under UV light exposure. Young’s modulus and tensile strength of fully cured resins show flexible to soft material attributes dependent on the molar mass of the used linear PTHF-diacrylates. Structuring the materials by stereo lithography (SL) and multiphoton polymerization (MPP) leads to tubes and bifurcated tube systems with a diameter smaller than 2 mm aimed at small to smallest supplying systems with capillary dimensions. WST-1 biocompatibility tests ofm polymer extracts show nontoxic characteristics of the adapted polymers after a washing process. Some polymers show shape memory effect (SME). PMID:24955530

Rapid fabrication method of a microneedle mold with controllable needle height and width.

PubMed

Lin, Yen-Heng; Lee, I-Chi; Hsu, Wei-Chieh; Hsu, Ching-Hong; Chang, Kai-Ping; Gao, Shao-Syuan

2016-10-01

The main issue of transdermal drug delivery is that macromolecular drugs cannot diffuse through the stratum corneum of skin. Many studies have pursued micro-sized needles encapsulated with drugs to overcome this problem, as these needles can pierce the stratum corneum and allow drugs to enter the circulatory system of the human body. However, most microneedle fabrication processes are time-consuming and require expensive equipment. In this study, we demonstrate a rapid method for fabricating a microneedle mold using drawing lithography and a UV-cured resin. The mold was filled with a water-soluble material, polyvinylpyrrolidone (PVP), which was then demolded to produce a water-soluble microneedle array. The results of an in vitro skin insertion test using PVP microneedles and pig ear skin demonstrated the feasibility of the microneedle mold. In addition, by controlling the viscosity of the UV-cured resin through various heat treatments, microneedles with different heights and aspect ratios were produced. Compared with other methods, this technology significantly simplifies and accelerates the mold fabrication process. In addition, the required equipment is relatively simple and inexpensive. Through this technology, we can rapidly fabricate microneedle molds with controllable dimensions for various applications.

The study of photochromic performance and photofatigue behavior of spirooxazine

NASA Astrophysics Data System (ADS)

Islam, Noor Zalikha Mohamed; Nazri, Shamsul Azrolsani Abdul Aziz; Nadir, Najiah; Zainuddin, Mat Tamizi

2017-12-01

Photochromism has been one of the successful photo-optic properties in the biomedical field especially regarding to ophthalmic applications. An experimental setup for kinetic behavior of 1,3,3-trimethylindolino-naphtospirooxazine (TINS) in polar solvent was carried out and the photochromism behavior based on UV irradiation from the perspective of irradiation power and duration time were observed. Photochromism stability showed that the photochrome exhibited active photochromism behavior properties and achieved maximum deep blue coloration at 6 % UV irradiation power. However, TINS experiences photo-fatigue on higher frequencies of UV light exposure at 85 min UV exposure. The relationship between photochromism fading property with a half-life of photochrome in the subjected polar environment was discussed from the basis of molecular collision theory.

Polarization manipulation in single refractive prism based holography lithography

NASA Astrophysics Data System (ADS)

Xiong, Wenjie; Xu, Yi; Xiao, Yujian; Lv, Xiaoxu; Wu, Lijun

2015-01-01

We propose theoretically and demonstrate experimentally a simple but effective strategy for polarization manipulation in single refractive prism based holographic lithography. By tuning the polarization of a single laser beam, we can obtain the pill shape interference pattern with a high-contrast where a complex optical setup and multiple polarizers are needed in the conventional holography lithography. Fabrication of pill shape two-dimensional polymer photonic crystals using one beam and one shoot holography lithography is shown as an example to support our theoretical results. This integrated polarization manipulation technique can release the crucial stability restrictions imposed on the multiple beams holography lithography.

Performance status of a small robot-mounted or hand-held, solar-blind, standoff chemical, biological, and explosives (CBE) sensor

NASA Astrophysics Data System (ADS)

Hug, W. F.; Reid, R. D.; Bhartia, R.; Lane, A. L.

2009-05-01

Photon Systems and JPL are continuing development of a new technology robot-mounted or hand-held sensor for reagentless, short-range, standoff detection and identification of trace levels CBE materials on surfaces. This deep ultraviolet CBE sensor is the result of ongoing Army STTR and DTRA programs. The evolving 6 lb, 15W, lantern-size sensor can discriminate CBE from background clutter materials using a combination of deep UV excited resonance Raman (RR) and laser induced native fluorescence (LINF) emissions resulting from excitation by a new technology deep UV laser. Standoff excitation of suspicious packages, vehicles, persons, and other objects that may contain hazardous materials is accomplished using wavelengths below 250nm where RR and LINF emissions occupy distinctly different wavelength regions. This enables simultaneous detection of RR and LINF emissions with no spectral overlap or interference of LINF over RR or RR over LINF. The new eye-safe targeted ultraviolet chemical, biological, and explosives (TUCBE) sensor can detect and identify less than 1 μg/cm2 of explosives or 104 bacterial spores at 10 meters standoff, or 10 ng/cm2 of explosives or 102 bacterial spores/cm2 at 1 meter standoff. Detection and identification requires less than 1 ms and has a sample rate up to 20 Hz. Lower concentrations of contamination can be detected and identified as closer ranges and higher concentrations at longer ranges. The sensor is solar blind and can be operated in full daylight conditions as a result of excitation and detection in the deep UV and the use of a gated detection system.

Bioresists from renewable resources as sustainable photoresins for 3D laser microlithography: material synthesis, cross-linking rate and characterization of the structures

NASA Astrophysics Data System (ADS)

Skliutas, Edvinas; KašÄ--taitÄ--, Sigita; GrigalevičiÅ«tÄ--, GiedrÄ--; Jonušauskas, Linas; RekštytÄ--, Sima; OstrauskaitÄ--, Jolita; Malinauskas, Mangirdas

2017-02-01

Stereolithography (SLA) allows rapid and accurate materialization of computer aided design (CAD) models into real objects out of photoreactive resin. Nowadays this technology has evolved to a widespread simple and flexible personal tabletop devices - three dimensional (3D) optical printers. However, most 3D SLA printers use commercially available resins which are not cheap and of limited applicability, often of unknown chemical ingredients and fixed to certain mechanical properties. For advanced research, it is important to have bio-resin appropriate to 3D print microscaffolds for cell proliferation and tissue engineering. To fill these requirements would be to use sources from bio-based resins, which can be made of naturally derived oils. Chosen substances glycerol diglycidyl ether and epoxidized linseed oil can be obtained from renewable recourses, are biodegradable and can be synthesized as sustainable photosensitive materials.1 UV (ff=365 nm) lithography was employed to determine their photocross-linking rate and cured material properties. After exposing material to UV radiation through a micro-patterned amplitude mask selective photopolymerization was observed. Acetone was used as a solvent to dissolve UV unaffected area and leaving only exposed microstructures on the substrate. The resins were compared to FormLabs Form Clear and Autodesk Ember PR48 as standard stereolithography materials. Finally, 3D microporous woodpile scaffolds were printed out of commercial resins and cells adhesion in them were explored.

Volcanic Cloud and Aerosol Monitor (VOLCAM) for Deep Space Gateway

NASA Astrophysics Data System (ADS)

Krotkov, N.; Bhartia, P. K.; Torres, O.; Li, C.; Sander, S.; Realmuto, V.; Carn, S.; Herman, J.

2018-02-01

We propose complementary ultraviolet (UV) and thermal Infrared (TIR) filter cameras for a dual-purpose whole Earth imaging with complementary natural hazards applications and Earth system science goals.

System design considerations for a production-grade, ESR-based x-ray lithography beamline

NASA Astrophysics Data System (ADS)

Kovacs, Stephen; Melore, Dan; Cerrina, Franco; Cole, Richard K.

1991-08-01

As electron storage ring (ESR) based x-ray lithography technology moves closer to becoming an industrial reality, more and more attention has been devoted to studying problem areas related to its application in the production environment. A principle component is the x-ray lithography beamline (XLBL) and its associated design requirements. XLBL, an x-ray radiation transport system, is one of the three major subunits in the ESR-based x-ray lithography system (XLS) and has a pivotal role in defining performance characteristics of the entire XLS. Its major functions are to transport the synchrotron orbital radiation (SOR) to the lithography target area with defined efficiency and to modify SOR into the spectral distribution defined by the lithography process window. These functions must be performed reliably in order to satisfy the required high production rate and ensure 0.25 micron resolution lithography conditions. In this paper the authors attempt to answer some specific questions that arise during the formulation of an XLBL system design. Three principle issues that are essential to formulating a design are (1) Radiation transport efficiency, (2) X-ray optical configurations in the beamline, (3) Beamline system configurations. Some practical solutions to thee problem areas are presented, and the effects of these parameters on lithography production rate are examined.

Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)

NASA Astrophysics Data System (ADS)

Steen, S. E.; McNab, S. J.; Sekaric, L.; Babich, I.; Patel, J.; Bucchignano, J.; Rooks, M.; Fried, D. M.; Topol, A. W.; Brancaccio, J. R.; Yu, R.; Hergenrother, J. M.; Doyle, J. P.; Nunes, R.; Viswanathan, R. G.; Purushothaman, S.; Rothwell, M. B.

2005-05-01

Semiconductor process development teams are faced with increasing process and integration complexity while the time between lithographic capability and volume production has remained more or less constant over the last decade. Lithography tools have often gated the volume checkpoint of a new device node on the ITRS roadmap. The processes have to be redeveloped after the tooling capability for the new groundrule is obtained since straight scaling is no longer sufficient. In certain cases the time window that the process development teams have is actually decreasing. In the extreme, some forecasts are showing that by the time the 45nm technology node is scheduled for volume production, the tooling vendors will just begin shipping the tools required for this technology node. To address this time pressure, IBM has implemented a hybrid-lithography strategy that marries the advantages of optical lithography (high throughput) with electron beam direct write lithography (high resolution and alignment capability). This hybrid-lithography scheme allows for the timely development of semiconductor processes for the 32nm node, and beyond. In this paper we will describe how hybrid lithography has enabled early process integration and device learning and how IBM applied e-beam & optical hybrid lithography to create the world's smallest working SRAM cell.

Plasmonic direct writing lithography with a macroscopical contact probe

NASA Astrophysics Data System (ADS)

Huang, Yuerong; Liu, Ling; Wang, Changtao; Chen, Weidong; Liu, Yunyue; Li, Ling

2018-05-01

In this work, we design a plasmonic direct writing lithography system with a macroscopical contact probe to achieve nanometer scale spots. The probe with bowtie-shaped aperture array adopts spring hinge and beam deflection method (BDM) to realize near-field lithography. Lithography results show that a macroscopical plasmonic contact probe can achieve a patterning resolution of around 75 nm at 365 nm wavelength, and demonstrate that the lithography system is promising for practical applications due to beyond the diffraction limit, low cost, and simplification of system configuration. CST calculations provide a guide for the design of recording structure and the arrangement of placing polarizer.

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

Biochemical Detection and Identification False Alarm Rate Dependence on Wavelength Using Laser Induced Fluorescence

NASA Technical Reports Server (NTRS)

Bhartia, R.; Hug, W. F.; Sala, E. C.; Sijapati, K.; Lane, A. L.; Reid, R. D.; Conrad, P. G.

2006-01-01

Most organic and many inorganic materials absorb strongly in specific wavelength ranges in the deep UV between about 220nm and 300nm. Excitation within these absorption bands results in native fluorescence emission. Each compound or composite material, such as a bacterial spore, has a unique excitation-emission fingerprint that can be used to provide information about the material. The sensitivity and specificity with which these materials can be detected and identified depends on the excitation wavelength and the number and location of observation wavelengths.We will present data on our deep ultraviolet Targeted Ultraviolet Chemical Sensors that demonstrate the sensitivity and specificity of the sensors. In particular, we will demonstrate the ability to quantitatively differentiate a wide range of biochemical agent targets against a wide range of background materials. We will describe the relationship between spectral resolution and specificity in target identification, as well as simple, fast, algorithms to identify materials.Hand-held, battery operated instruments using a deep UV laser and multi-band detection have been developed and deployed on missions to the Antarctic, the Arctic, and the deep ocean with the capability of detecting a single bacterial spore and to differentiate a wide range of organic and biological compounds.

Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mooney, P. M.; Tarun, Marianne; Beaton, D. A.

2016-07-21

Dilute GaAs1-xBix alloys exhibiting narrow band edge photoluminescence (PL) were recently grown by molecular beam epitaxy (MBE) with the growth surface illuminated by intense UV radiation. To investigate whether the improved optical quality of these films results from a reduction in the concentration of deep level defects, p+/n and n+/p junction diodes were fabricated on both the illuminated and dark areas of several samples. Deep Level Transient Spectroscopy (DLTS) measurements show that the illuminated and dark areas of both the n- and p-type GaAs1-xBix epi-layers have similar concentrations of near mid-gap electron and hole traps, in the 1015 cm-3 range.more » Thus the improved PL spectra cannot be explained by a reduction in non-radiative recombination at deep level defects. We note that carrier freeze-out above 35 K is significantly reduced in the illuminated areas of the p-type GaAs1-xBix layers compared to the dark areas, allowing the first DLTS measurements of defect energy levels close to the valence band edge. These defect levels may account for differences in the PL spectra from the illuminated and dark areas of un-doped layers with a similar Bi fraction.« less

Parabolic crossed planar polymeric x-ray lenses

NASA Astrophysics Data System (ADS)

Nazmov, V.; Reznikova, E.; Mohr, J.; Saile, V.; Vincze, L.; Vekemans, B.; Bohic, S.; Somogyi, A.

2011-01-01

The principles of design and manufacturing of the polymer planar x-ray lenses focusing in one and two directions, as well as the peculiarities of optical behaviors and the results of the lens test are reported in this paper. The methods of electron and deep x-ray lithography used in lens manufacturing allow the manufacture of ten or more x-ray lenses on one substrate; the lenses show focal lengths down to several centimeters for photon energies between 5 and 40 keV. The measured focus size was 105 nm for a linear lens with an intensity gain of about 407, and 300 × 770 nm for a crossed lens with an intensity gain of 6470.

Demonstration of lithography patterns using reflective e-beam direct write

NASA Astrophysics Data System (ADS)

Freed, Regina; Sun, Jeff; Brodie, Alan; Petric, Paul; McCord, Mark; Ronse, Kurt; Haspeslagh, Luc; Vereecke, Bart

2011-04-01

Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for high volume wafer processing. For this work, we report on the development and current status of a new maskless, direct write e-beam lithography tool which has the potential for high volume lithography at and below the 22 nm technology node. A Reflective Electron Beam Lithography (REBL) tool is being developed for high throughput electron beam direct write maskless lithography. The system is targeting critical patterning steps at the 22 nm node and beyond at a capital cost equivalent to conventional lithography. Reflective Electron Beam Lithography incorporates a number of novel technologies to generate and expose lithographic patterns with a throughput and footprint comparable to current 193 nm immersion lithography systems. A patented, reflective electron optic or Digital Pattern Generator (DPG) enables the unique approach. The Digital Pattern Generator is a CMOS ASIC chip with an array of small, independently controllable lens elements (lenslets), which act as an array of electron mirrors. In this way, the REBL system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG to achieve the capability of high throughput for sparse pattern wafer levels. The lens elements on the DPG are fabricated at IMEC (Leuven, Belgium) under IMEC's CMORE program. The CMOS fabricated DPG contains ~ 1,000,000 lens elements, allowing for 1,000,000 individually controllable beamlets. A single lens element consists of 5 electrodes, each of which can be set at controlled voltage levels to either absorb or reflect the electron beam. A system using a linear movable stage and the DPG integrated into the electron optics module was used to expose patterns on device representative wafers. Results of these exposure tests are discussed.

2D/0D graphene hybrids for visible-blind flexible UV photodetectors.

PubMed

Tetsuka, Hiroyuki

2017-07-17

Nitrogen-functionalized graphene quantum dots (NGQDs) are attractive building blocks for optoelectronic devices because of their exceptional tunable optical absorption and fluorescence properties. Here, we developed a high-performance flexible NGQD/graphene field-effect transistor (NGQD@GFET) hybrid ultraviolet (UV) photodetector, using dimethylamine-functionalized GQDs (NMe 2 -GQDs) with a large bandgap of ca. 3.3 eV. The NMe 2 -GQD@GFET photodetector exhibits high photoresponsivity and detectivity of ca. 1.5 × 10 4  A W -1 and ca. 5.5 × 10 11 Jones, respectively, in the deep-UV region as short as 255 nm without application of a backgate voltage. The feasibility of these flexible UV photodetectors for practical application in flame alarms is also demonstrated.

M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

DOEpatents

Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

1998-06-02

Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

2018-06-01

Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

Monolithic microfabricated valves and pumps by multilayer soft lithography.

PubMed

Unger, M A; Chou, H P; Thorsen, T; Scherer, A; Quake, S R

2000-04-07

Soft lithography is an alternative to silicon-based micromachining that uses replica molding of nontraditional elastomeric materials to fabricate stamps and microfluidic channels. We describe here an extension to the soft lithography paradigm, multilayer soft lithography, with which devices consisting of multiple layers may be fabricated from soft materials. We used this technique to build active microfluidic systems containing on-off valves, switching valves, and pumps entirely out of elastomer. The softness of these materials allows the device areas to be reduced by more than two orders of magnitude compared with silicon-based devices. The other advantages of soft lithography, such as rapid prototyping, ease of fabrication, and biocompatibility, are retained.

Nanoimprint lithography for nanodevice fabrication

NASA Astrophysics Data System (ADS)

Barcelo, Steven; Li, Zhiyong

2016-09-01

Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

Polymeric materials in Space

NASA Astrophysics Data System (ADS)

Skurat, Vladimir

Paper of short review type. It is the continuation of and addition to previous review papers "V. E. Skurat. Polymers in Space. In: Encyclopedia of aerospace engineering, vol. 4, Wiley and sons, 2010; Ibid., 2012 (on line)". Following topics are considered: (1) Destruction of polymers by solar radiation with various wavelengths in different spectral regions (visible-UV, vacuum UV (VUV), deep UV, soft and hard X-rays) are discussed. In difference with common polymer photochemistry induced by UV radiation, directions of various routs of polymer phototransformations and their relative yields are greatly dependent on wavelength of light (photon energy) during illuminations in VUV, deep UV and X-ray regions. During last twenty years, intensive spacecraft investigations of solar spectrum show great periodic and spontaneous variations of radiation intensities in short-wavelengths regions - up to one - two decimal orders of magnitude for X-rays. As a result, during solar flares the absorbed dose on the polymer surfaces from X-rays can be compared with absorbed dose from VUV radiation. (2) Some new approaches to predictions of reaction efficiencies of fast orbital atomic oxygen in their interaction with polymeric materials are considered. (3) Some aspects of photocatalitic destruction of polymers in vacuum conditions by full-spectrum solar radiation are discussed. This process can take place in enamels containing semiconducting particles (TiO2, ZnO) as pigments. (4) Contamination of spacecraft surfaces from intrinsic outer atmosphere play important role not only from the point of view of deterioration of optical and thermophysical properties. Layers of SiO2 contaminations with nanometer thicknesses can greatly diminish mass losses from perfluorinated polymers under VUV irradiation.

A Consideration of HALO Type Orbit Designation and Maintaining for KUAFU-A and WSO/UV Missions

NASA Astrophysics Data System (ADS)

Nianchuan, J.; Xian, S.; Jianguo, Y.; Guangli, W.; Jingsong, P.

In the new era of deep space exploration more and more explorations at special places or points in solar system are carried out and planned There are five equilibrium points in the Sun-Earth system and the orbits around these points have good dynamic attribute Due to this reason The areas vicinity equilibrium points have many advantages for space exploration In recent 20 years the NASA and ESA have successfully launched several spacecrafts orbiting the Sun-Earth collinear equilibrium points Following the developing steps of space and deep space exploration in China Chinese scientists and engineers are considering and suggesting two equilibrium points explorations One is named KUAFU-A mission whose craft will orbit L1 point and the scientific target is studying the evolution of space weather of solar-terrestrial area The other is WSO UV mission whose craft will orbit L2 point and the scientific target is studying the structure and evolution of galaxies This report is mainly about HALO type orbit designation and maintaining for these two missions Following points are included 1 Briefly reviewing the explorations at the equilibrium points launched by NASA and ESA 2 Simply introducing the exploration KUAFU-A and WSO UV 3 Discussing the designation and maintaining of HALO type orbits in some detail for KUAFU-A and WSO UV

Surface microstructuring of biocompatible bone analogue material HAPEX using LIGA technique and embossing

NASA Astrophysics Data System (ADS)

Schneider, Andreas; Rea, Susan; Huq, Ejaz; Bonfield, William

2003-04-01

HAPEX is an artificial bone analogue composite based on hydroxyapatite and polyethylene, which can be applied for growth of bone cells. Due to its biocompatibility and favourable mechanical properties, HAPEX is used for orthopaedic implants like tympanic (middle ear) bones. The morphology of HAPEX surfaces is of high interest and it is believed that surface structuring on a micron scale might improve the growth conditions for bone cells. A new and simple approach for the microstructuring of HAPEX surfaces has been investigated using LIGA technique. LIGA is a combination of several processes, in particular lithography, electroplating and forming/moulding. For HAPEX surface structuring, arrays of dots, grids and lines with typical lateral dimension ranging from 5 μm to 50 μm were created on a chromium photomask and the patterns were transferred into thick SU-8 photoresist (structure height > 10 μm) by UV lithography. Subsequently, the SU-8 structures served as moulds for electroplating nickel on Si wafers and nickel substrates. The final nickel microstructures were used as embossing master for the HAPEX material. Embossing was carried out using a conventional press (> 500 hPa) with the facility to heat the master and the HAPEX. The temperature ranged from ambient to a few degrees above glass transition temperature (Tg) of HAPEX. The paper will include details of the fabrication process and process tolerances in lateral and vertical directions. Data obtained are correlated to the temperature used during embossing.

Patterning techniques for next generation IC's

NASA Astrophysics Data System (ADS)

Balasinski, A.

2007-12-01

Reduction of linear critical dimensions (CDs) beyond 45 nm would require significant increase of the complexity of pattern definition process. In this work, we discuss the key successor methodology to the current optical lithography, the Double Patterning Technique (DPT). We compare the complexity of CAD solutions, fab equipment, and wafer processing with its competitors, such as the nanoimprint (NIL) and the extreme UV (EUV) techniques. We also look ahead to the market availability for the product families enabled using the novel patterning solutions. DPT is often recognized as the most viable next generation lithography as it utilizes the existing equipment and processes and is considered a stop-gap solution before the advanced NIL or EUV equipment is developed. Using design for manufacturability (DfM) rules, DPT can drive the k1 factor down to 0.13. However, it faces a variety of challenges, from new mask overlay strategies, to layout pattern split, novel OPC, increased CD tolerances, new etch techniques, as well as long processing time, all of which compromise its return on investment (RoI). In contrast, it can be claimed e.g., that the RoI is the highest for the NIL but this technology bears significant risk. For all novel patterning techniques, the key questions remain: when and how should they be introduced, what is their long-term potential, when should they be replaced, and by what successor technology. We summarize the unpublished results of several panel discussions on DPT at the recent SPIE/BACUS conferences.

Polymer optical waveguide with multiple graded-index cores for on-board interconnects fabricated using soft-lithography.

PubMed

Ishigure, Takaaki; Nitta, Yosuke

2010-06-21

We successfully fabricate a polymer optical waveguide with multiple graded-index (GI) cores directly on a substrate utilizing the soft-lithography method. A UV-curable polymer (TPIR-202) supplied from Tokyo Ohka Kogyo Co., Ltd. is used, and the GI cores are formed during the curing process of the core region, which is similar to the preform process we previously reported. We experimentally confirm that near parabolic refractive index profiles are formed in the parallel cores (more than 50 channels) with 40 microm x 40 microm size at 250-microm pitch. Although the loss is still as high as 0.1 approximately 0.3 dB/cm at 850 nm, which is mainly due to scattering loss inherent to the polymer matrix, the scattering loss attributed to the waveguide's structural irregularity could be sufficiently reduced by a graded refractive index profile. For comparison, we fabricate step-index (SI)-core waveguides with the same materials by means of the same process. Then, we evaluate the inter-channel crosstalk in the SI- and GI-core waveguides under almost the same conditions. It is noteworthy that remarkable crosstalk reduction (5 dB and beyond) is confirmed in the GI-core waveguides, since the propagating modes in GI-cores are tightly confined near the core center and less optical power is found near the core cladding boundary. This significant improvement in the inter-channel crosstalk allows the GI-core waveguides to be utilized for extra high-density on-board optical interconnections.

1.55 µm emission from a single III-nitride top-down and site-controlled nanowire quantum disk

NASA Astrophysics Data System (ADS)

Chen, Qiming; Yan, Changling; Qu, Yi

2017-07-01

InN/InGaN single quantum well (SQW) was fabricated on 100 nm GaN buffer layer which was deposited on GaN template by plasma assisted molecular beam epitaxy (PA-MBE). The In composition and the surface morphology were measured by x-ray diffusion (XRD) and atom force microscope (AFM), respectively. Afterwards, the sample was fabricated into site-controlled nanowires arrays by hot-embossing nano-imprint lithography (HE-NIL) and ultraviolet nanoimprint lithography (UV-NIL). The nanowires were uniform along the c-axis and aligned periodically as presented by scanning electron microscope (SEM). The single nanowire showed disk-in-a-wire structure by high angle annular dark field (HAADF) and an In-rich or Ga deficient region was observed by energy dispersive x-ray spectrum (EDXS). The optical properties of the SQW film and single nanowire were measured using micro photoluminescence (µ-PL) spectroscopy. The stimulating light wavelength was 632.8 nm which was emitted from a He-Ne laser and the detector was a liquid nitrogen cooled InGaAs detector. A blue peak shift from the film material to the nanowire was observed. This was due to the quantum confinement Stark Effect. More importantly, the 1.55 µm emission was given from the single disk-in-a-wire structure at room temperature. We believe the arrays of such nanowires may be useful for quantum communication in the future.

Progress in coherent lithography using table-top extreme ultraviolet lasers

NASA Astrophysics Data System (ADS)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution interference pattern whose lattice is modified by a custom designed Talbot mask. In other words, this method enables filling the arbitrary Talbot cell with ultra-fine interference nanofeatures. Detailed optics modeling, system design and experiment results using He-Ne laser and table top EUV laser are included. The last part of chapter IV will analyze its exclusive advantages over traditional Talbot or interference lithography.

ALMA Spectroscopic Survey in the Hubble Ultra Deep Field: The Infrared Excess of UV-Selected z = 2-10 Galaxies as a Function of UV-Continuum Slope and Stellar Mass

NASA Astrophysics Data System (ADS)

Bouwens, Rychard J.; Aravena, Manuel; Decarli, Roberto; Walter, Fabian; da Cunha, Elisabete; Labbé, Ivo; Bauer, Franz E.; Bertoldi, Frank; Carilli, Chris; Chapman, Scott; Daddi, Emanuele; Hodge, Jacqueline; Ivison, Rob J.; Karim, Alex; Le Fevre, Olivier; Magnelli, Benjamin; Ota, Kazuaki; Riechers, Dominik; Smail, Ian R.; van der Werf, Paul; Weiss, Axel; Cox, Pierre; Elbaz, David; Gonzalez-Lopez, Jorge; Infante, Leopoldo; Oesch, Pascal; Wagg, Jeff; Wilkins, Steve

2016-12-01

We make use of deep 1.2 mm continuum observations (12.7 μJy beam-1 rms) of a 1 arcmin2 region in the Hubble Ultra Deep Field to probe dust-enshrouded star formation from 330 Lyman-break galaxies spanning the redshift range z = 2-10 (to ˜2-3 M ⊙ yr-1 at 1σ over the entire range). Given the depth and area of ASPECS, we would expect to tentatively detect 35 galaxies, extrapolating the Meurer z ˜ 0 IRX-β relation to z ≥ 2 (assuming dust temperature T d ˜ 35 K). However, only six tentative detections are found at z ≳ 2 in ASPECS, with just three at >3σ. Subdividing our z = 2-10 galaxy samples according to stellar mass, UV luminosity, and UV-continuum slope and stacking the results, we find a significant detection only in the most massive (>109.75 M ⊙) subsample, with an infrared excess (IRX = L IR/L UV) consistent with previous z ˜ 2 results. However, the infrared excess we measure from our large selection of sub-L ∗ (<109.75 M ⊙) galaxies is {0.11}-0.42+0.32 ± 0.34 (bootstrap and formal uncertainties) and {0.14}-0.14+0.15 ± 0.18 at z = 2-3 and z = 4-10, respectively, lying below even an IRX-β relation for the Small Magellanic Cloud (95% confidence). These results demonstrate the relevance of stellar mass for predicting the IR luminosity of z ≳ 2 galaxies. We find that the evolution of the IRX-stellar mass relationship depends on the evolution of the dust temperature. If the dust temperature increases monotonically with redshift (\\propto {(1+z)}0.32) such that T d ˜ 44-50 K at z ≥ 4, current results are suggestive of little evolution in this relationship to z ˜ 6. We use these results to revisit recent estimates of the z ≥ 3 star formation rate density.

Deep Galex Observations of the Coma Cluster: Source Catalog and Galaxy Counts

NASA Technical Reports Server (NTRS)

Hammer, D.; Hornschemeier, A. E.; Mobasher, B.; Miller, N.; Smith, R.; Arnouts, S.; Milliard, B.; Jenkins, L.

2010-01-01

We present a source catalog from deep 26 ks GALEX observations of the Coma cluster in the far-UV (FUV; 1530 Angstroms) and near-UV (NUV; 2310 Angstroms) wavebands. The observed field is centered 0.9 deg. (1.6 Mpc) south-west of the Coma core, and has full optical photometric coverage by SDSS and spectroscopic coverage to r-21. The catalog consists of 9700 galaxies with GALEX and SDSS photometry, including 242 spectroscopically-confirmed Coma member galaxies that range from giant spirals and elliptical galaxies to dwarf irregular and early-type galaxies. The full multi-wavelength catalog (cluster plus background galaxies) is 80% complete to NUV=23 and FUV=23.5, and has a limiting depth at NUV=24.5 and FUV=25.0 which corresponds to a star formation rate of 10(exp -3) solar mass yr(sup -1) at the distance of Coma. The GALEX images presented here are very deep and include detections of many resolved cluster members superposed on a dense field of unresolved background galaxies. This required a two-fold approach to generating a source catalog: we used a Bayesian deblending algorithm to measure faint and compact sources (using SDSS coordinates as a position prior), and used the GALEX pipeline catalog for bright and/or extended objects. We performed simulations to assess the importance of systematic effects (e.g. object blends, source confusion, Eddington Bias) that influence source detection and photometry when using both methods. The Bayesian deblending method roughly doubles the number of source detections and provides reliable photometry to a few magnitudes deeper than the GALEX pipeline catalog. This method is also free from source confusion over the UV magnitude range studied here: conversely, we estimate that the GALEX pipeline catalogs are confusion limited at NUV approximately 23 and FUV approximately 24. We have measured the total UV galaxy counts using our catalog and report a 50% excess of counts across FUV=22-23.5 and NUV=21.5-23 relative to previous GALEX measurements, which is not attributed to cluster member galaxies. Our galaxy counts are a better match to deeper UV counts measured with HST.

Successful demonstration of a comprehensive lithography defect monitoring strategy

NASA Astrophysics Data System (ADS)

Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

2003-07-01

This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the widest range of sizes, from full-wafer to suboptical, and with the largest variety of characteristics. Some of these defects fall into the categories of coating problems, focus and exposure defects, developer defects, edge-bead removal problems, contamination and scratches usually defined as lithography macro defects as shown in Figure 1. Others fall into the category of lithography micro defects, Figure 2. They are characterized as having low topography such as stains, developer spots, satellites, are very small such as micro-bridging, partial micro-bridging, micro-bubbles, CD variation and single isolated missing or deformed contacts or vias. Lithography is the only area of the fab besides CMP in which defect excursions can be corrected by reworking the wafers. The opportunity to fix defect problems without scrapping wafers is best served by a defect inspection strategy that captures the full range of all relevant defect types with a proper balance between the costs of monitoring and inspection and the potential cost of yield loss. In the previous paper [1] it was shown that a combination of macro inspection and high numerical aperture (NA) brightfield imaging inspection technology is best suited for the application in the case of the idealized fab modeled. In this paper we will report on the successful efforts in implementing and validating the lithography defect monitoring strategy at two existing 200 mm factories running 0.15 μm and 0.13 μm design rules.

MAPPER: high-throughput maskless lithography

NASA Astrophysics Data System (ADS)

Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.; Kampherbeek, B. J.

2009-03-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. The objective of building these tools is to involve semiconductor companies to be able to verify tool performance in their own environment. To enable this, the tools will have a 300 mm wafer stage in addition to a 110-beam optics column. First exposures at 45 nm half pitch resolution have been performed and analyzed. On the same wafer it is observed that all beams print and based on analysis of 11 beams the CD for the different patterns is within 2.2 nm from target and the CD uniformity for the different patterns is better than 2.8 nm.

SILVERRUSH. III. Deep optical and near-infrared spectroscopy for Lyα and UV-nebular lines of bright Lyα emitters at z = 6-7

NASA Astrophysics Data System (ADS)

Shibuya, Takatoshi; Ouchi, Masami; Harikane, Yuichi; Rauch, Michael; Ono, Yoshiaki; Mukae, Shiro; Higuchi, Ryo; Kojima, Takashi; Yuma, Suraphong; Lee, Chien-Hsiu; Furusawa, Hisanori; Konno, Akira; Martin, Crystal L.; Shimasaku, Kazuhiro; Taniguchi, Yoshiaki; Kobayashi, Masakazu A. R.; Kajisawa, Masaru; Nagao, Tohru; Goto, Tomotsugu; Kashikawa, Nobunari; Komiyama, Yutaka; Kusakabe, Haruka; Momose, Rieko; Nakajima, Kimihiko; Tanaka, Masayuki; Wang, Shiang-Yu

2018-01-01

We present Lyα and UV-nebular emission line properties of bright Lyα emitters (LAEs) at z = 6-7 with a luminosity of log LLyα/[erg s-1] = 43-44 identified in the 21 deg2 area of the SILVERRUSH early sample developed with the Subaru Hyper Suprime-Cam survey data. Our optical spectroscopy newly confirms 21 bright LAEs with clear Lyα emission, and contributes to making a spectroscopic sample of 96 LAEs at z = 6-7 in SILVERRUSH. From the spectroscopic sample, we select seven remarkable LAEs as bright as Himiko and CR7 objects, and perform deep Keck/MOSFIRE and Subaru/nuMOIRCS near-infrared spectroscopy reaching the 3 σ flux limit of ˜2 × 10-18 erg s-1 for the UV-nebular emission lines of He II λ1640, C IV λλ1548,1550, and O III]λλ1661,1666. Except for one tentative detection of C IV, we find no strong UV-nebular lines down to the flux limit, placing the upper limits of the rest-frame equivalent widths (EW0) of ˜2-4 Å for C IV, He II, and O III] lines. We also investigate the VLT/X-SHOOTER spectrum of CR7 whose 6 σ detection of He II is claimed by Sobral et al. Although two individuals and the ESO archive service carefully reanalyzed the X-SHOOTER data that are used in the study of Sobral et al., no He II signal of CR7 is detected, supportive of weak UV-nebular lines of the bright LAEs even for CR7. The spectral properties of these bright LAEs are thus clearly different from those of faint dropouts at z ˜ 7 that have strong UV-nebular lines shown in the various studies. Comparing these bright LAEs and the faint dropouts, we find anti-correlations between the UV-nebular line EW0 and the UV-continuum luminosity, which are similar to those found at z ˜ 2-3.

Epifluorescent direct-write photolithography for microfluidic applications

NASA Astrophysics Data System (ADS)

Higgins, MacCallister; Geiger, Emil J.

2015-01-01

We present a technique for fabricating soft-lithography molds created using an epifluorescent microscope. By focusing the UV light emitted from a Hg arc lamp, we demonstrate the ability to direct-write photoresist features with a minimum resolution of 45 μm. This resolution is satisfactory for many microfluidic applications. A major advantage of this technique is its low cost, both in terms of capital investment and on-going expenditures. Furthermore, by using a motorized stage, we can quickly fabricate a design on demand, eliminating the need, cost, and lead-time required for a photomask. With the addition of an electronic shutter, complicated separate structures can be imaged and utilized to make a wide range of microfluidic devices. We demonstrate this technique using dry-film resist due to its low cost, ease of application, and less stringent safety protocols.

Effect of Cu2O morphology on photocatalytic hydrogen generation and chemical stability of TiO2/Cu2O composite.

PubMed

Zhu, Lihong; Zhang, Junying; Chen, Ziyu; Liu, Kejia; Gao, Hong

2013-07-01

Improving photocatalytic activity and stability of TiO2/Cu2O composite is a challenge in generating hydrogen from water. In this paper, the TiO2 film/Cu2O microgrid composite was prepared via a microsphere lithography technique, which possesses a remarkable performance of producing H2 under UV-vis light irradiation, in comparison with pure TiO2 film, Cu2O film and TiO2 film/Cu2O film. More interesting is that in TiO2 film/Cu2O microgrid, photo-corrosion of Cu2O can be retarded. After deposition of Pt on its surface, the photocatalytic activity of TiO2/Cu2O microgrid in producing H2 is improved greatly.

Antireflective Paraboloidal Microlens Film for Boosting Power Conversion Efficiency of Solar Cells.

PubMed

Fang, Chaolong; Zheng, Jun; Zhang, Yaoju; Li, Yijie; Liu, Siyuan; Wang, Weiji; Jiang, Tao; Zhao, Xuesong; Li, Zhihong

2018-06-21

Microlens arrays can improve light transmittance in optical devices or enhance the photoelectrical conversion efficiency of photovoltaic devices. Their surface morphology (aspect ratio and packed density) is vital to photon management in solar cells. Here, we report a 100% packed density paraboloidal microlens array (PMLA), with a large aspect ratio, fabricated by direct-write UV laser photolithography coupled with soft imprint lithography. Optical characterization shows that the PMLA structure can remarkably decrease the front-side reflectance of solar cell device. The measured electrical parameters of the solar cell device clearly and consistently demonstrate that the PMLA film can considerably improve the photoelectrical conversion efficiency. In addition, the PMLA film has superhydrophobic properties, verified by measurement of a large water contact angle, and can enhance the self-cleaning capability of solar cell devices.

Biomimetic Moth-eye Nanofabrication: Enhanced Antireflection with Superior Self-cleaning Characteristic.

PubMed

Sun, Jingyao; Wang, Xiaobing; Wu, Jinghua; Jiang, Chong; Shen, Jingjing; Cooper, Merideth A; Zheng, Xiuting; Liu, Ying; Yang, Zhaogang; Wu, Daming

2018-04-03

Sub-wavelength antireflection moth-eye structures were fabricated with Nickel mold using Roll-to-Plate (R2P) ultraviolet nanoimprint lithography (UV-NIL) on transparent polycarbonate (PC) substrates. Samples with well replicated patterns established an average reflection of 1.21% in the visible light range, 380 to 760 nm, at normal incidence. An excellent antireflection property of a wide range of incidence angles was shown with the average reflection below 4% at 50°. Compared with the unpatterned ultraviolet-curable resin coating, the resulting sub-wavelength moth-eye structure also exhibited increased hydrophobicity in addition to antireflection. This R2P method is especially suitable for large-area product preparation and the biomimetic moth-eye structure with multiple performances can be applied to optical devices such as display screens, solar cells, or light emitting diodes.

High Throughput Optical Lithography by Scanning a Massive Array of Bowtie Aperture Antennas at Near-Field

DTIC Science & Technology

2015-11-03

scale optical projection system powered by spatial light modulators, such as digital micro-mirror device ( DMD ). Figure 4 shows the parallel lithography ...1Scientific RepoRts | 5:16192 | DOi: 10.1038/srep16192 www.nature.com/scientificreports High throughput optical lithography by scanning a massive...array of bowtie aperture antennas at near-field X. Wen1,2,3,*, A. Datta1,*, L. M. Traverso1, L. Pan1, X. Xu1 & E. E. Moon4 Optical lithography , the

Moore's law, lithography, and how optics drive the semiconductor industry

NASA Astrophysics Data System (ADS)

Hutcheson, G. Dan

2018-03-01

When the subject of Moore's Law arises, the important role that lithography plays and how advances in optics have made it all possible is seldom brought up in the world outside of lithography itself. When lithography is mentioned up in the value chain, it's often a critique of how advances are coming too slow and getting far too expensive. Yet advances in lithography are at the core of how Moore's Law is viable. This presentation lays out how technology and the economics of optics in manufacturing interleave to drive the immense value that semiconductors have brought to the world by making it smarter. Continuing these advances will be critical as electronics make the move from smart to cognitive.

Lithography with MeV Energy Ions for Biomedical Applications: Accelerator Considerations

NASA Astrophysics Data System (ADS)

Sangyuenyongpipat, S.; Whitlow, H. J.; Nakagawa, S. T.; Yoshida, E.

2009-03-01

MeV ion beam lithographies are very powerful techniques for 3D direct writing in positive or negtive photoresist materials. Nanometer-scale rough structures, or clear areas with straight vertical sidewalls as thin as a few 10's of nm in a resist of a few nm to 100 μm thickness can be made. These capabilities are particularly useful for lithography in cellular- and sub-cellular level biomedical research and technology applications. It can be used for tailor making special structures such as optical waveguides, biosensors, DNA sorters, spotting plates, systems for DNA, protein and cell separation, special cell-growth substrates and microfluidic lab-on-a-chip devices. Furthermore MeV ion beam lithography can be used for rapid prototyping, and also making master stamps and moulds for mass production by hot embossing and nanoimprint lithography. The accelerator requirements for three different high energy ion beam lithography techniques are overviewed. We consider the special requirements placed on the accelerator and how this is achieved for a commercial proton beam writing tool.

Deep-UV-sensitive high-frame-rate backside-illuminated CCD camera developments

NASA Astrophysics Data System (ADS)

Dawson, Robin M.; Andreas, Robert; Andrews, James T.; Bhaskaran, Mahalingham; Farkas, Robert; Furst, David; Gershstein, Sergey; Grygon, Mark S.; Levine, Peter A.; Meray, Grazyna M.; O'Neal, Michael; Perna, Steve N.; Proefrock, Donald; Reale, Michael; Soydan, Ramazan; Sudol, Thomas M.; Swain, Pradyumna K.; Tower, John R.; Zanzucchi, Pete

2002-04-01

New applications for ultra-violet imaging are emerging in the fields of drug discovery and industrial inspection. High throughput is critical for these applications where millions of drug combinations are analyzed in secondary screenings or high rate inspection of small feature sizes over large areas is required. Sarnoff demonstrated in1990 a back illuminated, 1024 X 1024, 18 um pixel, split-frame-transfer device running at > 150 frames per second with high sensitivity in the visible spectrum. Sarnoff designed, fabricated and delivered cameras based on these CCDs and is now extending this technology to devices with higher pixel counts and higher frame rates through CCD architectural enhancements. The high sensitivities obtained in the visible spectrum are being pushed into the deep UV to support these new medical and industrial inspection applications. Sarnoff has achieved measured quantum efficiencies > 55% at 193 nm, rising to 65% at 300 nm, and remaining almost constant out to 750 nm. Optimization of the sensitivity is being pursued to tailor the quantum efficiency for particular wavelengths. Characteristics of these high frame rate CCDs and cameras will be described and results will be presented demonstrating high UV sensitivity down to 150 nm.

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

NASA Astrophysics Data System (ADS)

Singh Pratiyush, Anamika; Krishnamoorthy, Sriram; Kumar, Sandeep; Xia, Zhanbo; Muralidharan, Rangarajan; Rajan, Siddharth; Nath, Digbijoy N.

2018-06-01

We demonstrate zero-bias spectral responsivity in MBE-grown β-Ga2O3 planar UV-C detector with good linearity up to optical power density of 4.6 mW cm‑2. Devices with asymmetrical metal contacts were realized on 150 nm thick β-Ga2O3 films on sapphire. The device exhibited a spectral responsivity of 1.4 mA W‑1 at 255 nm under zero-bias condition, dark current <10 nA at 15 V and UV-to-visible rejection ratio ∼105 at 5 V. The demonstrated UV-C detector exhibited an estimated high detectivity of 2.0 × 1012 Jones at 1 V and were found to be very stable and repeatable, suggesting its potential use for focal plane arrays.

Transmission of light in deep sea water at the site of the ANTARES neutrino telescope

NASA Astrophysics Data System (ADS)

ANTARES Collaboration; Aguilar, J. A.; Albert, A.; Amram, P.; Anghinolfi, M.; Anton, G.; Anvar, S.; Ardellier-Desages, F. E.; Aslanides, E.; Aubert, J.-J.; Azoulay, R.; Bailey, D.; Basa, S.; Battaglieri, M.; Becherini, Y.; Bellotti, R.; Beltramelli, J.; Bertin, V.; Billault, M.; Blaes, R.; Blanc, F.; Bland, R. W.; de Botton, N.; Boulesteix, J.; Bouwhuis, M. C.; Brooks, C. B.; Bradbury, S. M.; Bruijn, R.; Brunner, J.; Bugeon, F.; Burgio, G. F.; Cafagna, F.; Calzas, A.; Caponetto, L.; Carmona, E.; Carr, J.; Cartwright, S. L.; Cecchini, S.; Charvis, P.; Circella, M.; Colnard, C.; Compère, C.; Croquette, J.; Cooper, S.; Coyle, P.; Cuneo, S.; Damy, G.; van Dantzig, R.; Deschamps, A.; de Marzo, C.; Destelle, J.-J.; de Vita, R.; Dinkelspiler, B.; Dispau, G.; Drougou, J.-F.; Druillole, F.; Engelen, J.; Favard, S.; Feinstein, F.; Ferry, S.; Festy, D.; Fopma, J.; Fuda, J.-L.; Gallone, J.-M.; Giacomelli, G.; Girard, N.; Goret, P.; Gournay, J.-F.; Hallewell, G.; Hartmann, B.; Heijboer, A.; Hello, Y.; Hernández-Rey, J. J.; Herrouin, G.; Hößl, J.; Hoffmann, C.; Hubbard, J. R.; Jaquet, M.; de Jong, M.; Jouvenot, F.; Kappes, A.; Karg, T.; Karkar, S.; Karolak, M.; Katz, U.; Keller, P.; Kooijman, P.; Korolkova, E. V.; Kouchner, A.; Kretschmer, W.; Kudryavtsev, V. A.; Lafoux, H.; Lagier, P.; Lamare, P.; Languillat, J.-C.; Laubier, L.; Legou, T.; Le Guen, Y.; Le Provost, H.; Le van Suu, A.; Lo Nigro, L.; Lo Presti, D.; Loucatos, S.; Louis, F.; Lyashuk, V.; Magnier, P.; Marcelin, M.; Margiotta, A.; Maron, C.; Massol, A.; Mazéas, F.; Mazeau, B.; Mazure, A.; McMillan, J. E.; Michel, J.-L.; Millot, C.; Milovanovic, A.; Montanet, F.; Montaruli, T.; Morel, J.-P.; Moscoso, L.; Nezri, E.; Niess, V.; Nooren, G. J.; Ogden, P.; Olivetto, C.; Palanque-Delabrouille, N.; Payre, P.; Petta, C.; Pineau, J.-P.; Poinsignon, J.; Popa, V.; Potheau, R.; Pradier, T.; Racca, C.; Randazzo, N.; Real, D.; van Rens, B. A. P.; Réthoré, F.; Ripani, M.; Roca-Blay, V.; Romeyer, A.; Rollin, J.-F.; Romita, M.; Rose, H. J.; Rostovtsev, A.; Ruppi, M.; Russo, G. V.; Sacquin, Y.; Saouter, S.; Schuller, J.-P.; Schuster, W.; Sokalski, I.; Suvorova, O.; Spooner, N. J. C.; Spurio, M.; Stolarczyk, T.; Stubert, D.; Taiuti, M.; Thompson, L. F.; Tilav, S.; Usik, A.; Valdy, P.; Vallage, B.; Vaudaine, G.; Vernin, P.; Virieux, J.; Vladimirsky, E.; de Vries, G.; de Witt Huberts, P.; de Wolf, E.; Zaborov, D.; Zaccone, H.; Zakharov, V.; Zavatarelli, S.; de Zornoza, J. D.; Zúñiga, J.

2005-02-01

The ANTARES neutrino telescope is a large photomultiplier array designed to detect neutrino-induced upward-going muons by their Cherenkov radiation. Understanding the absorption and scattering of light in the deep Mediterranean is fundamental to optimising the design and performance of the detector. This paper presents measurements of blue and UV light transmission at the ANTARES site taken between 1997 and 2000. The derived values for the scattering length and the angular distribution of particulate scattering were found to be highly correlated, and results are therefore presented in terms of an absorption length λabs and an effective scattering length λscteff. The values for blue (UV) light are found to be λabs ≃ 60(26) m, λscteff≃265(122)m, with significant (˜15%) time variability. Finally, the results of ANTARES simulations showing the effect of these water properties on the anticipated performance of the detector are presented.

Modified polyhydroxystyrenes as matrix resins for dissolution inhibition type photoresists

NASA Astrophysics Data System (ADS)

Pawlowski, Georg; Sauer, Thomas P.; Dammel, Ralph R.; Gordon, Douglas J.; Hinsberg, William D.; McKean, Dennis R.; Lindley, Charlet R.; Merrem, Hans-Joachim; Roeschert, Heinz; Vicari, Richard; Willson, C. Grant

1990-06-01

It is generally accepted that the production of shrink versions of the 16 MB DRAM and the 64 MB DRAM generations will be patterned using deep UV radiation. This provides a new challenge to the photoresist suppliers, as the standard photoresist formulations are not suitable for this technology, mainly because the presently used novolak resins are highly opaque in the 200 - 300 nm region. This is especially true for the 248 nm wavelength of KrF eximer lasers. Poly 4- hydroxystyrene [PHS] has several advantages in transmission and thermal stability; however, its dissolution rate in commercial grade developers is unacceptably high. We report some recent results on modified, alkyl-substituted PHS derivatives. These polymers combine reduced alkaline solubiity with adequate optical and thermal properties, making them acceptable for future deep UV based production processes. Selected data of these new (co)polymers are discussed.

High performance small molecule photodetector with broad spectral response range from 200 to 900 nm

NASA Astrophysics Data System (ADS)

Wu, Shuang-hong; Li, Wen-lian; Chu, Bei; Su, Zi-sheng; Zhang, Feng; Lee, C. S.

2011-07-01

We demonstrate a photodetector (PD) with broad spectral response by taking the advantages of more flexible device design in using small molecule materials. The optimized device shows an external quantum efficiency of over 20% from 200 to 900 nm. The high performance is achieved by jointing two donor (D)/acceptor (A) hetero-junctions [m-MTDATA(D)/TiOPc(A) and TiOPc(D)/F16CuPc: PTCDI-C8(A)] such that photoresponses over the deep-ultraviolet (UV) and visible-near infrared regions can be independently optimized. By choosing D- and A-materials with matched energy level alignment, high carrier mobility, and balanced carrier transporting properties, the present PD shows a fast response of 56 ns. The high speed and deep-UV sensitivity might lead to potential military applications such as missile tracking in addition to optical communications, chemical/biological sensing etc.

Deep-UV biological imaging by lanthanide ion molecular protection

PubMed Central

Kumamoto, Yasuaki; Fujita, Katsumasa; Smith, Nicholas Isaac; Kawata, Satoshi

2015-01-01

Deep-UV (DUV) light is a sensitive probe for biological molecules such as nucleobases and aromatic amino acids due to specific absorption. However, the use of DUV light for imaging is limited because DUV can destroy or denature target molecules in a sample. Here we show that trivalent ions in the lanthanide group can suppress molecular photodegradation under DUV exposure, enabling a high signal-to-noise ratio and repetitive DUV imaging of nucleobases in cells. Underlying mechanisms of the photodegradation suppression can be excitation relaxation of the DUV-absorptive molecules due to energy transfer to the lanthanide ions, and/or avoiding ionization and reactions with surrounding molecules, including generation of reactive oxygen species, which can modify molecules that are otherwise transparent to DUV light. This approach, directly removing excited energy at the fundamental origin of cellular photodegradation, indicates an important first step towards the practical use of DUV imaging in a variety of biological applications. PMID:26819825

Time-course study of different innate immune mediators produced by UV-irradiated skin: comparative effects of short and daily versus a single harmful UV exposure.

PubMed

Cela, Eliana M; Friedrich, Adrian; Paz, Mariela L; Vanzulli, Silvia I; Leoni, Juliana; González Maglio, Daniel H

2015-05-01

The modulatory effects of solar UV radiation on the immune system have been widely studied. As the skin is the main target of UV radiation, our purpose was to compare the impact on skin innate immunity of two contrasting ways to be exposed to sunlight. Hairless mice were UV irradiated with a single high UV dose simulating a harmful exposure, or with repetitive low UV doses simulating short occasional daily exposures. Skin samples were taken at different times after UV irradiation to evaluate skin histology, inflammatory cell recruitment, epidermal T-cell population and the mitochondrial function of epidermal cells. The transcriptional profiles of pro-inflammatory cytokines, chemokines, antimicrobial peptides and Toll-like receptors were evaluated by RT-PCR and ELISA in tissue homogenates. Finally, a lymphangiography was performed to assess modification in the lymphatic vessel system. A single high UV dose produces a deep inflammatory state characterized by the production of pro-inflammatory cytokines and chemokines that, in turn, induces the recruitment of neutrophils and macrophages into the irradiated area. On the other hand, repetitive low UV doses drive the skin to a photo-induced alert state in which there is no sign of inflammation, but the epithelium undergoes changes in thickness, the lymphatic circulation increases, and the transcription of antimicrobial peptides is induced. © 2014 John Wiley & Sons Ltd.

High throughput nanoimprint lithography for semiconductor memory applications

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Zhang, Wei; Khusnatdinov, Niyaz; Stachowiak, Tim; Irving, J. W.; Longsine, Whitney; Traub, Matthew; Fletcher, Brian; Liu, Weijun

2017-03-01

Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into the resist fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are two critical components to meeting throughput requirements for imprint lithography. Using a similar approach to what is already done for many deposition and etch processes, imprint stations can be clustered to enhance throughput. The FPA-1200NZ2C is a four station cluster system designed for high volume manufacturing. For a single station, throughput includes overhead, resist dispense, resist fill time (or spread time), exposure and separation. Resist exposure time and mask/wafer separation are well understood processing steps with typical durations on the order of 0.10 to 0.20 seconds. To achieve a total process throughput of 17 wafers per hour (wph) for a single station, it is necessary to complete the fluid fill step in 1.2 seconds. For a throughput of 20 wph, fill time must be reduced to only one 1.1 seconds. There are several parameters that can impact resist filling. Key parameters include resist drop volume (smaller is better), system controls (which address drop spreading after jetting), Design for Imprint or DFI (to accelerate drop spreading) and material engineering (to promote wetting between the resist and underlying adhesion layer). In addition, it is mandatory to maintain fast filling, even for edge field imprinting. In this paper, we address the improvements made in all of these parameters to first enable a 1.20 second filling process for a device like pattern and have demonstrated this capability for both full fields and edge fields. Non-fill defectivity is well under 1.0 defects/cm2 for both field types. Next, by further reducing drop volume and optimizing drop patterns, a fill time of 1.1 seconds was demonstrated.

Progress in mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Brooks, Cynthia B.; Doyle, Gary F.; Brown, Laura; Jones, Chris; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

Contrast matching of line gratings obtained with NXE3XXX and EUV- interference lithography

NASA Astrophysics Data System (ADS)

Tasdemir, Zuhal; Mochi, Iacopo; Olvera, Karen Garrido; Meeuwissen, Marieke; Yildirim, Oktay; Custers, Rolf; Hoefnagels, Rik; Rispens, Gijsbert; Fallica, Roberto; Vockenhuber, Michaela; Ekinci, Yasin

2017-10-01

Extreme UV lithography (EUVL) has gained considerable attention for several decades as a potential technology for the semiconductor industry and it is now close to being adopted in high-volume manufacturing. At Paul Scherrer Institute (PSI), we have focused our attention on EUV resist performance issues by testing available high-performance EUV resists in the framework of a joint collaboration with ASML. For this purpose, we use the grating-based EUV-IL setup installed at the Swiss Light Source (SLS) at PSI, in which a coherent beam with 13.5 nm wavelength is used to produce a periodic aerial image with virtually 100% contrast and large depth of focus. Interference lithography is a relatively simple technique and it does not require many optical components, therefore the unintended flare is minimized and the aerial image is well-defined sinusoidal pattern. For the collaborative work between PSI and ASML, exposures are being performed on the EUV-IL exposure tool at PSI. For better quantitative comparison to the NXE scanner results, it is targeted to determine the actual NILS of the EUV-IL exposure tool at PSI. Ultimately, any resist-related metrology must be aligned and compared with the performance of EUV scanners. Moreover, EUV-IL is a powerful method for evaluating the resist performance and a resist which performs well with EUV-IL, shows, in general, also good performance with NXE scanners. However, a quantitative prediction of the performance based on EUV-IL measurements has not been possible due to the differences in aerial image formation. In this work, we aim to study the performance of EUV resists with different aerial images. For this purpose, after the real interference pattern exposure, we overlay a flat field exposure to emulate different levels of contrast. Finally, the results are compared with data obtained from EUV scanner. This study will enable not only match the data obtained from EUV- IL at PSI with the performance of NXE scanners, but also a better understanding of resist fundamentals by studying the effects of the aerial image on resist performance by changing the aerial image contrast in a controlled manner using EUV-IL.

Micro-fabrication method of graphite mesa microdevices based on optical lithography technology

NASA Astrophysics Data System (ADS)

Zhang, Cheng; Wen, Donghui; Zhu, Huamin; Zhang, Xiaorui; Yang, Xing; Shi, Yunsheng; Zheng, Tianxiang

2017-12-01

Graphite mesa microdevices have incommensurate contact nanometer interfaces, superlubricity, high-speed self-retraction, and other characteristics, which have potential applications in high-performance oscillators and micro-scale switches, memory devices, and gyroscopes. However, the current method of fabricating graphite mesa microdevices is mainly based on high-cost, low efficiency electron beam lithography technology. In this paper, the processing technologies of graphite mesa microdevices with various shapes and sizes were investigated by a low-cost micro-fabrication method, which was mainly based on optical lithography technology. The characterization results showed that the optical lithography technology could realize a large-area of patterning on the graphite surface, and the graphite mesa microdevices, which have a regular shape, neat arrangement, and high verticality could be fabricated in large batches through optical lithography technology. The experiments and analyses showed that the graphite mesa microdevices fabricated through optical lithography technology basically have the same self-retracting characteristics as those fabricated through electron beam lithography technology, and the maximum size of the graphite mesa microdevices with self-retracting phenomenon can reach 10 µm  ×  10 µm. Therefore, the proposed method of this paper can realize the high-efficiency and low-cost processing of graphite mesa microdevices, which is significant for batch fabrication and application of graphite mesa microdevices.

Transcriptomic Profiling of Soybean in Response to High-Intensity UV-B Irradiation Reveals Stress Defense Signaling

PubMed Central

Yoon, Min Young; Kim, Moon Young; Shim, Sangrae; Kim, Kyung Do; Ha, Jungmin; Shin, Jin Hee; Kang, Sungtaeg; Lee, Suk-Ha

2016-01-01

The depletion of the ozone layer in the stratosphere has led to a dramatic spike in ultraviolet B (UV-B) intensity and increased UV-B light levels. The direct absorption of high-intensity UV-B induces complex abiotic stresses in plants, including excessive light exposure, heat, and dehydration. However, UV-B stress signaling mechanisms in plants including soybean (Glycine max [L.]) remain poorly understood. Here, we surveyed the overall transcriptional responses of two soybean genotypes, UV-B-sensitive Cheongja 3 and UV-B-resistant Buseok, to continuous UV-B irradiation for 0 (control), 0.5, and 6 h using RNA-seq analysis. Homology analysis using UV-B-related genes from Arabidopsis thaliana revealed differentially expressed genes (DEGs) likely involved in UV-B stress responses. Functional classification of the DEGs showed that the categories of immune response, stress defense signaling, and reactive oxygen species (ROS) metabolism were over-represented. UV-B-resistant Buseok utilized phosphatidic acid-dependent signaling pathways (based on subsequent reactions of phospholipase C and diacylglycerol kinase) rather than phospholipase D in response to UV-B exposure at high fluence rates, and genes involved in its downstream pathways, such as ABA signaling, mitogen-activated protein kinase cascades, and ROS overproduction, were upregulated in this genotype. In addition, the DEGs for TIR-NBS-LRR and heat shock proteins are positively activated. These results suggest that defense mechanisms against UV-B stress at high fluence rates are separate from the photomorphogenic responses utilized by plants to adapt to low-level UV light. Our study provides valuable information for deep understanding of UV-B stress defense mechanisms and for the development of resistant soybean genotypes that survive under high-intensity UV-B stress. PMID:28066473

Electrowetting of liquid polymer on petal-mimetic microbowl-array surfaces for formation of microlens array with varying focus on a single substrate

NASA Astrophysics Data System (ADS)

Li, Xiangmeng; Shao, Jinyou; Li, Xiangming; Tian, Hongmiao

2015-03-01

In this paper, microlens array with varying focal lengths were fabricated on a single microbowl-array textured substrate. The solid microbowl-arrayed NOA61 (kind of polyurethane-based polymer with UV curablity) surface was resulted from nanoimprinting by polydimethylsiloxane (PDMS) mold. The PDMS mold was replicated from an SU-8 master which was generated by electron beam lithography. Such microbowl-arrayed surfaces demonstrate petal-mimetic highly adhesive hydrophobic wetting properties, which can promote an irreversible electrowetting (EW) effect and a dereased contact angle of water droplets as well as other liquid droplets by applying direct current (DC) voltage. To fabricate a microlens array with varying focal-lengths, liquid NOA61 was supplied from a syringe on the solid NOA61 microtextured film and DC voltage was applied succesively. After removing the DC voltage, these liquid NOA61 microdrops deposited on the solid microtextured NOA61 surface on tin-indium-oxide coated substrate could be solidified via UV irradiation, thus leading to microlens array with uneven numerical apertures on a single substrate. Numerical simulation was also done to verify the EW effect. Finally, optical imaging characterization was performed to confirm the varied focus of the NOA61 microdrops.

Continuous fabrication of nanostructure arrays for flexible surface enhanced Raman scattering substrate

PubMed Central

Zhang, Chengpeng; Yi, Peiyun; Peng, Linfa; Lai, Xinmin; Chen, Jie; Huang, Meizhen; Ni, Jun

2017-01-01

Surface-enhanced Raman spectroscopy (SERS) has been a powerful tool for applications including single molecule detection, analytical chemistry, electrochemistry, medical diagnostics and bio-sensing. Especially, flexible SERS substrates are highly desirable for daily-life applications, such as real-time and in situ Raman detection of chemical and biological targets, which can be used onto irregular surfaces. However, it is still a major challenge to fabricate the flexible SERS substrate on large-area substrates using a facile and cost-effective technique. The roll-to-roll ultraviolet nanoimprint lithography (R2R UV-NIL) technique provides a solution for the continuous fabrication of flexible SERS substrate due to its high-speed, large-area, high-resolution and high-throughput. In this paper, we presented a facile and cost-effective method to fabricate flexible SERS substrate including the fabrication of polymer nanostructure arrays and the metallization of the polymer nanostructure arrays. The polymer nanostructure arrays were obtained by using R2R UV-NIL technique and anodic aluminum oxide (AAO) mold. The functional SERS substrates were then obtained with Au sputtering on the surface of the polymer nanostructure arrays. The obtained SERS substrates exhibit excellent SERS and flexibility performance. This research can provide a beneficial direction for the continuous production of the flexible SERS substrates. PMID:28051175

Report on the Study of Radiation Damage in Calcium Fluoride and Magnesium Fluoride Crystals for use in Excimer Laser Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

1999-10-04

A study was performed to investigate the effects of radiation damage in calcium fluoride and magnesium fluoride crystals caused by gamma rays and UV photons from excimer lasers. The purpose was to study and correlate the damage caused by these two different mechanisms in various types of material used for fabricating optical elements in high power excimer lasers and lens systems of lithography tools. These optical systems are easily damaged by the laser itself, and it is necessary to use only the most radiation resistant materials for certain key elements. It was found that a clear correlation exists between the,more » radiation induced damage caused by high energy gamma rays and that produced by UV photons from the excimer laser. This correlation allows a simple procedure to be developed to select the most radiation resistant material at the ingot level, which would be later used to fabricate various components of the optical system. This avoids incurring the additional cost of fabricating actual optical elements with material that would later be damaged under prolonged use. The result of this screening procedure can result in a considerable savings in the overall cost of the lens and laser system.« less

Scalable and continuous fabrication of bio-inspired dry adhesives with a thermosetting polymer.

PubMed

Lee, Sung Ho; Kim, Sung Woo; Kang, Bong Su; Chang, Pahn-Shick; Kwak, Moon Kyu

2018-04-04

Many research groups have developed unique micro/nano-structured dry adhesives by mimicking the foot of the gecko with the use of molding methods. Through these previous works, polydimethylsiloxane (PDMS) has been developed and become the most commonly used material for making artificial dry adhesives. The material properties of PDMS are well suited for making dry adhesives, such as conformal contacts with almost zero preload, low elastic moduli for stickiness, and easy cleaning with low surface energy. From a performance point of view, dry adhesives made with PDMS can be highly advantageous but are limited by its low productivity, as production takes an average of approximately two hours. Given the low productivity of PDMS, some research groups have developed dry adhesives using UV-curable materials, which are capable of continuous roll-to-roll production processes. However, UV-curable materials were too rigid to produce good adhesion. Thus, we established a PDMS continuous-production system to achieve good productivity and adhesion performance. We designed a thermal roll-imprinting lithography (TRL) system for the continuous production of PDMS microstructures by shortening the curing time by controlling the curing temperature (the production speed is up to 150 mm min-1). Dry adhesives composed of PDMS were fabricated continuously via the TRL system.

The effect of UV-B radiation on photosynthesis and respiration of phytoplankton, benthic macroalgae and seagrasses.

PubMed

Larkum, A W; Wood, W F

1993-04-01

Several species of marine benthic algae, four species of phytoplankton and two species of seagrass have been subjected to ultraviolet B irradiation for varying lengths of time and the effects on respiration, photosynthesis and fluorescence rise kinetics studied. No effect on respiration was found. Photosynthesis was inhibited to a variable degree in all groups of plants after irradiation over periods of up to 1 h and variable fluorescence was also inhibited in a similar way. The most sensitive plants were phytoplankton and deep-water benthic algae. Intertidal benthic algae were the least sensitive to UV-B irradiation and this may be related to adaptation, through the accumulation of UV-B screening compounds, to high light/high UV-B levels. Inhibition of variable fluorescence (Fv) of the fluorescence rise curve was a fast and sensitive indicator of UV-B damage. Two plants studied, a brown alga and a seagrass, showed very poor recovery of Fv over a period of 32 h.

UV Observations of the Galaxy Cluster Abell 1795 with the Optical Monitor on XMM-Newton

NASA Technical Reports Server (NTRS)

Mittaz, J. P. D.; Kaastra, J. S.; Tamura, T.; Fabian, A. C.; Mushotzky, F.; Peterson, J. R.; Ikebe, Y.; Lumb, D. H.; Paerels, F.; Stewart, G.

2000-01-01

We present the results of an analysis of broad band UV observations of the central regions of Abell 1795 observed with the optical monitor on XMM-Newton. As have been found with other UV observations of the central regions of clusters of galaxies, we find evidence for star formation. However, we also find evidence for absorption in the cD galaxy on a more extended scale than has been seen with optical imaging. We also report the first UV observation of part of the filamentary structure seen in H-alpha, X-rays and very deep U band imaging. The part of the filament we see is very blue with UV colours consistent with a very early (O/B) stellar population. This is the first direct evidence of a dominant population of early type stars at the centre of Abell 1795 and implies very recent star formation. The relationship of this emission to emission at other wavebands is discussed.

An investigation on defect-generation conditions in immersion lithography

NASA Astrophysics Data System (ADS)

Tomita, Tadatoshi; Shimoaoki, Takeshi; Enomoto, Masashi; Kyoda, Hideharu; Kitano, Junichi; Suganaga, Toshifumi

2006-03-01

As a powerful candidate for a lithography technique that can accommodate the scaling-down of semiconductors, 193-nm immersion lithography-which realizes a high numerical aperture (NA) and uses deionized water as the medium between the lens and wafer in the exposure system-has been developing at a rapid pace and has reached the stage of practical application. In regards to defects that are a cause for concern in the case of 193-nm immersion lithography, however, many components are still unclear and many problems remain to be solved. It has been pointed out, for example, that in the case of 193-nm immersion lithography, immersion of the resist film in deionized water during exposure causes infiltration of moisture into the resist film, internal components of the resist dissolve into the deionized water, and residual water generated during exposure affects post-processing. Moreover, to prevent this influence of directly immersing the resist in de-ionized water, application of a protective film is regarded as effective. However, even if such a film is applied, it is still highly likely that the above-mentioned defects will still occur. Accordingly, to reduce these defects, it is essential to identify the typical defects occurring in 193-nm immersion lithography and to understand the condition for generation of defects by using some kinds of protective films and resist materials. Furthermore, from now onwards, with further scaling down of semiconductors, it is important to maintain a clear understanding of the relation between defect-generation conditions and critical dimensions (CD). Aiming to extract typical defects occurring in 193-nm immersion lithography, the authors carried out a comparative study with dry exposure lithography, thereby confirming several typical defects associated with immersion lithography. We then investigated the conditions for generation of defects in the case of some kinds of protective films. In addition to that, by investigating the defect-generation conditions and comparing the classification data between wet and dry exposure, we were able to determine the origin of each particular defect involved in immersion lithography. Furthermore, the comparison of CD for wet and dry processing could indicate the future defectivity levels to be expected with shrinking immersion process critical dimensions.

In Situ Determination of Illegal Drugs in Oral Fluid by Portable Capillary Electrophoresis with Deep UV Excited Fluorescence Detection.

PubMed

Saar-Reismaa, Piret; Erme, Enn; Vaher, Merike; Kulp, Maria; Kaljurand, Mihkel; Mazina-Šinkar, Jekaterina

2018-05-15

The present study demonstrates the potential of a portable capillary electrophoresis (CE) instrument, coupled to deep UV fluorescence detector (FD) with a 230-255 nm excitation wavelength range, for the determination of the abuse of illegal drugs in oral fluids in situ. CE was introduced in this study due its exceptional power of separation and resolution, short analysis time, and ability for miniaturization for on-site assessment of different substances. The deep UV fluorescence detector was equipped with five interchangeable emission filters, in the emission wavelength range from 278 to 600 nm, and was successfully employed for determination of natively fluorescing illegal drugs, such as cocaine, cocaethylene, 3,4-methylenedioxymethamphetamine (MDMA), 3,4-methylenedioxeamphetamine (MDA), 3,4-methylenedioxy- N-ethylamphetamine (MDEA), para-methoxyamphetamine (PMA), para-methoxy- N-methylamphetamine (PMMA), amphetamine (AMP), methamphetamine (METH), tetrahydrocannabinol (THC) and cannabidiol (CBD). The developed FD showed impressive sensitivity. The instrumental detection limit was 0.5 μg/L for MDMA. It also showed broad linearity, up to 50 mg/L for MDMA. The noise CV% was 1.1% for an empty capillary and 0.6% for a capillary filled with acetonitrile. The portable CE-FD with developed electrophoretic methodologies was successfully utilized for the determination of illegal abuse of drugs during "Weekend" 2016 and 2017 Music Festivals (Estonia). Moreover, CE-FD can be employed for detection of other natively fluorescing compounds in the proposed range (e.g., for different phenolic compounds, BTEX, naphthalene derivatives, and others), significantly widening the applicability of developed CE-FD instrument.

Lossless compression techniques for maskless lithography data

NASA Astrophysics Data System (ADS)

Dai, Vito; Zakhor, Avideh

2002-07-01

Future lithography systems must produce more dense chips with smaller feature sizes, while maintaining the throughput of one wafer per sixty seconds per layer achieved by today's optical lithography systems. To achieve this throughput with a direct-write maskless lithography system, using 25 nm pixels for 50 nm feature sizes, requires data rates of about 10 Tb/s. In a previous paper, we presented an architecture which achieves this data rate contingent on consistent 25 to 1 compression of lithography data, and on implementation of a decoder-writer chip with a real-time decompressor fabricated on the same chip as the massively parallel array of lithography writers. In this paper, we examine the compression efficiency of a spectrum of techniques suitable for lithography data, including two industry standards JBIG and JPEG-LS, a wavelet based technique SPIHT, general file compression techniques ZIP and BZIP2, our own 2D-LZ technique, and a simple list-of-rectangles representation RECT. Layouts rasterized both to black-and-white pixels, and to 32 level gray pixels are considered. Based on compression efficiency, JBIG, ZIP, 2D-LZ, and BZIP2 are found to be strong candidates for application to maskless lithography data, in many cases far exceeding the required compression ratio of 25. To demonstrate the feasibility of implementing the decoder-writer chip, we consider the design of a hardware decoder based on ZIP, the simplest of the four candidate techniques. The basic algorithm behind ZIP compression is Lempel-Ziv 1977 (LZ77), and the design parameters of LZ77 decompression are optimized to minimize circuit usage while maintaining compression efficiency.

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velazquez, R.; Rivera, M.; Feng, P., E-mail: p.feng@upr.edu

2016-08-15

High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN filmmore » in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.« less

Advanced electric-field scanning probe lithography on molecular resist using active cantilever

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Aydogan, Cemal; Lipowicz, Hubert-Seweryn; Ivanov, Tzvetan; Lenk, Steve; Ahmad, Ahmad; Angelov, Tihomir; Reum, Alexander; Ishchuk, Valentyn; Atanasov, Ivaylo; Krivoshapkina, Yana; Hofer, Manuel; Holz, Mathias; Rangelow, Ivo W.

2015-03-01

The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many novel nanoelectronic, NEMS, optical and bio-nanotechnology-based devices. Based on the thermally actuated, piezoresistive cantilever technology we have developed a first prototype of a scanning probe lithography (SPL) platform able to image, inspect, align and pattern features down to single digit nano regime. The direct, mask-less patterning of molecular resists using active scanning probes represents a promising path circumventing the problems in today's radiation-based lithography. Here, we present examples of practical applications of the previously published electric field based, current-controlled scanning probe lithography on molecular glass resist calixarene by using the developed tabletop SPL system. We demonstrate the application of a step-and-repeat scanning probe lithography scheme including optical as well as AFM based alignment and navigation. In addition, sequential read-write cycle patterning combining positive and negative tone lithography is shown. We are presenting patterning over larger areas (80 x 80 μm) and feature the practical applicability of the lithographic processes.

Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

NASA Astrophysics Data System (ADS)

Zhang, Wei

In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade structure were fabricated into mesa-structure devices and the I-V characterization at 20 K indicates sequential tunneling with electroluminescence emission at about 10 THz. Similarly, Far-infrared photoconductive detectors were grown by the same method. Photocurrent spectra centered at 23 mum (13 THz) are resolved up to 50 K, with responsivity of approximately 7 mA/W.

Dwarf galaxies in the coma cluster: Star formation properties and evolution

NASA Astrophysics Data System (ADS)

Hammer, Derek M.

The infall regions of galaxy clusters are unique laboratories for studying the impact of environment on galaxy evolution. This intermediate region links the low-density field environment and the dense core of the cluster, and is thought to host recently accreted galaxies whose star formation is being quenched by external processes associated with the cluster. In this dissertation, we measure the star formation properties of galaxies at the infall region of the nearby rich cluster of galaxies, Coma. We rely primarily on Ultraviolet (UV) data owing to its sensitivity to recent star formation and we place more emphasis on the properties of dwarf galaxies. Dwarf galaxies are good tracers of external processes in clusters but their evolution is poorly constrained as they are intrinsically faint and hence more challenging to detect. We make use of deep GALEX far-UV and near-UV observations at the infall region of the Coma cluster. This area of the cluster has supporting photometric coverage at optical and IR wavelengths in addition to optical spectroscopic data that includes deep redshift coverage of dwarf galaxies in Coma. Our GALEX observations were the deepest exposures taken for a local galaxy cluster. The depth of these images required alternative data analysis techniques to overcome systematic effects that limit the default GALEX pipeline analysis. Specifically, we used a deblending method that improved detection efficiency by a factor of ˜2 and allowed reliable photometry a few magnitudes deeper than the pipeline catalog. We performed deep measurements of the total UV galaxy counts in our field that were used to measure the source confusion limit for crowded GALEX fields. The star formation properties of Coma members were studied for galaxies that span from starbursts to passive galaxies. Star-forming galaxies in Coma tend to have lower specific star formation rates, on average, as compared to field galaxies. We show that the majority of these galaxies are likely in the process of being quenched or were only recently quenched. We modeled the quenching timescales for transition galaxies, or “green valley” objects, and found that the majority are quenched in less than 1 Gyr. This timescale is consistent with rapid dynamical processes that are active in the cluster environment as opposed to the more gradual quenching mechanisms that exist in the group environment. For the passive galaxy population, we have measured an average stellar age of 6-8 Gyr for the red sequence which is consistent with previous studies based on spectroscopic observations. We note that the star formation properties of Coma member galaxies were established from photometry alone, as opposed to using spectroscopic data which are more challenging to obtain for dwarf galaxies. We have measured the faintest UV luminosity functions (LFs) presented for a rich galaxy cluster thus far. The Coma UV LFs are 3.5 mag fainter than previous studies in Coma, and are sufficiently deep that we reach the dwarf passive galaxy population for the first time. We have introduced a new technique for measuring the LF which avoids color selection effects associated with previous methods. The UV LFs constructed separately for star-forming and passive galaxies follow a similar distribution at faint magnitudes, which suggests that the recent quenching of infalling dwarf star-forming galaxies is sufficient to build the dwarf passive population in Coma. The Coma UV LFs show a turnover at faint magnitudes as compared to the field, owing to a deficit of dwarf galaxies with stellar masses below M∗ = 108 M⊙ . We show that the UV LFs for the field behind the Coma cluster are nearly identical to the average field environment, and do not show evidence for a turnover at faint magnitudes. We suspect that the missing dwarf galaxies in Coma are severely disrupted by tidal processes as they are accreted onto the cluster, just prior to reaching the infall region studied here.

High resolution imaging and lithography with hard x rays using parabolic compound refractive lenses

NASA Astrophysics Data System (ADS)

Schroer, C. G.; Benner, B.; Günzler, T. F.; Kuhlmann, M.; Zimprich, C.; Lengeler, B.; Rau, C.; Weitkamp, T.; Snigirev, A.; Snigireva, I.; Appenzeller, J.

2002-03-01

Parabolic compound refractive lenses are high quality optical components for hard x rays. They are particularly suited for full field imaging, with applications in microscopy and x-ray lithography. Taking advantage of the large penetration depth of hard x rays, the interior of opaque samples can be imaged with submicrometer resolution. To obtain the three-dimensional structure of a sample, microscopy is combined with tomographic techniques. In a first hard x-ray lithography experiment, parabolic compound refractive lenses have been used to project the reduced image of a lithography mask onto a resist. Future developments are discussed.

Nanoparticle photoresist studies for EUV lithography

NASA Astrophysics Data System (ADS)

Kasahara, Kazuki; Xu, Hong; Kosma, Vasiliki; Odent, Jeremy; Giannelis, Emmanuel P.; Ober, Christopher K.

2017-03-01

EUV (extreme ultraviolet) lithography is one of the most promising candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap. Though polymer type CAR (chemically amplified resist) is the currently standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, recent progress in nanoparticle photoresists which Cornell University has intensely studied is discussed. Lithography performance, especially scum elimination, improvement studies with the dissolution rate acceleration concept and new metal core applications are described.

The GALEX Time Domain Survey. I. Selection and Classification of Over a Thousand Ultraviolet Variable Sources

NASA Astrophysics Data System (ADS)

Gezari, S.; Martin, D. C.; Forster, K.; Neill, J. D.; Huber, M.; Heckman, T.; Bianchi, L.; Morrissey, P.; Neff, S. G.; Seibert, M.; Schiminovich, D.; Wyder, T. K.; Burgett, W. S.; Chambers, K. C.; Kaiser, N.; Magnier, E. A.; Price, P. A.; Tonry, J. L.

2013-03-01

We present the selection and classification of over a thousand ultraviolet (UV) variable sources discovered in ~40 deg2 of GALEX Time Domain Survey (TDS) NUV images observed with a cadence of 2 days and a baseline of observations of ~3 years. The GALEX TDS fields were designed to be in spatial and temporal coordination with the Pan-STARRS1 Medium Deep Survey, which provides deep optical imaging and simultaneous optical transient detections via image differencing. We characterize the GALEX photometric errors empirically as a function of mean magnitude, and select sources that vary at the 5σ level in at least one epoch. We measure the statistical properties of the UV variability, including the structure function on timescales of days and years. We report classifications for the GALEX TDS sample using a combination of optical host colors and morphology, UV light curve characteristics, and matches to archival X-ray, and spectroscopy catalogs. We classify 62% of the sources as active galaxies (358 quasars and 305 active galactic nuclei), and 10% as variable stars (including 37 RR Lyrae, 53 M dwarf flare stars, and 2 cataclysmic variables). We detect a large-amplitude tail in the UV variability distribution for M-dwarf flare stars and RR Lyrae, reaching up to |Δm| = 4.6 mag and 2.9 mag, respectively. The mean amplitude of the structure function for quasars on year timescales is five times larger than observed at optical wavelengths. The remaining unclassified sources include UV-bright extragalactic transients, two of which have been spectroscopically confirmed to be a young core-collapse supernova and a flare from the tidal disruption of a star by dormant supermassive black hole. We calculate a surface density for variable sources in the UV with NUV < 23 mag and |Δm| > 0.2 mag of ~8.0, 7.7, and 1.8 deg-2 for quasars, active galactic nuclei, and RR Lyrae stars, respectively. We also calculate a surface density rate in the UV for transient sources, using the effective survey time at the cadence appropriate to each class, of ~15 and 52 deg-2 yr-1 for M dwarfs and extragalactic transients, respectively.

Design and fabrication of nano-imprint templates using unique pattern transforms and primitives

NASA Astrophysics Data System (ADS)

MacDonald, Susan; Mellenthin, David; Rentzsch, Kevin; Kramer, Kenneth; Ellenson, James; Hostetler, Tim; Enck, Ron

2005-11-01

Increasing numbers of MEMS, photonic, and integrated circuit manufacturers are investigating the use of Nano-imprint Lithography or Step and Flash Imprint Lithography (SFIL) as a lithography choice for making various devices and products. Their main interests in using these technologies are the lack of aberrations inherent in traditional optical reduction lithography, and the relative low cost of imprint tools. Since imprint templates are at 1X scale, the small sizes of these structures have necessitated the use of high-resolution 50KeV, and 100KeV e-beam lithography tools to build these templates. For MEMS and photonic applications, the structures desired are often circles, arches, and other non-orthogonal shapes. It has long been known that both 50keV, and especially 100keV e-beam lithography tools are extremely accurate, and can produce very high resolution structures, but the trade off is long write times. The main drivers in write time are shot count and stage travel. This work will show how circles and other non-orthogonal shapes can be produced with a 50KeV Variable Shaped Beam (VSB) e-beam lithography system using unique pattern transforms and primitive shapes, while keeping the shot count and write times under control. The quality of shapes replicated into the resist on wafer using an SFIL tool will also be presented.

Microsystems Research in Japan

DTIC Science & Technology

2003-09-01

microsystems applications, like microfluidic systems, will require more than planar lithography -based fabrication processes. The committee was impressed by the...United States focused on exploiting silicon planar lithography as the core technology for microstructure fabrication, whereas Japan explored a wide...including LIGA and its extensions, micro-stereolithography, and e-beam lithography . The range of materials seen in Japan was broader than in the

Laser patterning of transparent polymers assisted by plasmon excitation.

PubMed

Elashnikov, R; Trelin, A; Otta, J; Fitl, P; Mares, D; Jerabek, V; Svorcik, V; Lyutakov, O

2018-06-13

Plasmon-assisted lithography of thin transparent polymer films, based on polymer mass-redistribution under plasmon excitation, is presented. The plasmon-supported structures were prepared by thermal annealing of thin Ag films sputtered on glass or glass/graphene substrates. Thin films of polymethylmethacrylate, polystyrene and polylactic acid were then spin-coated on the created plasmon-supported structures. Subsequent laser beam writing, at the wavelength corresponding to the position of plasmon absorption, leads to mass redistribution and patterning of the thin polymer films. The prepared structures were characterized using UV-Vis spectroscopy and confocal and AFM microscopy. The shape of the prepared structures was found to be strongly dependent on the substrate type. The mechanism leading to polymer patterning was examined and attributed to the plasmon-heating. The proposed method makes it possible to create different patterns in polymer films without the need for wet technological stages, powerful light sources or a change in the polymer optical properties.

Experimental study of turbulent structures over hairy poro-elastic surfaces

NASA Astrophysics Data System (ADS)

Couliou, Marie; Hansson, Jonas; van der Wijngaart, Wouter; Lundell, Fredrik; Bagheri, Shervin

2016-11-01

Flows over slender, deformable and dense structures are ubiquitous in both nature and technological applications, ranging from the atmospheric flow over trees to the flow over the over the skin of organisms. In order to create a fundamental understanding of how poro-elatic surface can be used for flow control purposes, our work focuses on the behaviour of wall-bounded turbulent flows over fibrous poro-elastic surfaces. We fabricate the coatings using Off-Stoichiometry-Thiolene-Epoxy (OSTE+) polymers and multidirectional UV-lithography which enables us to design arrays of flexible pillars with various geometrical parameters (aspect ratio, pitch, inclinaison, etc.). We assess the effects of these coatings on an overlying low-Reynolds number turbulent flow using a water-table facility and PIV measurements. In particular, we focus on the modification of near wall turbulent structures in both space and time due to the presence of the poro-elastic coatings.

Comprehensive analyses of core-shell InGaN/GaN single nanowire photodiodes

NASA Astrophysics Data System (ADS)

Zhang, H.; Guan, N.; Piazza, V.; Kapoor, A.; Bougerol, C.; Julien, F. H.; Babichev, A. V.; Cavassilas, N.; Bescond, M.; Michelini, F.; Foldyna, M.; Gautier, E.; Durand, C.; Eymery, J.; Tchernycheva, M.

2017-12-01

Single nitride nanowire core/shell n-p photodetectors are fabricated and analyzed. Nanowires consisting of an n-doped GaN stem, a radial InGaN/GaN multiple quantum well system and a p-doped GaN external shell were grown by catalyst-free metal-organic vapour phase epitaxy on sapphire substrates. Single nanowires were dispersed and the core and the shell regions were contacted with a metal and an ITO deposition, respectively, defined using electron beam lithography. The single wire photodiodes present a response in the visible to UV spectral range under zero external bias. The detector operation speed has been analyzed under different bias conditions. Under zero bias, the  -3 dB cut-off frequency is ~200 Hz for small light modulations. The current generation was modeled using non-equilibrium Green function formalism, which evidenced the importance of phonon scattering for carrier extraction from the quantum wells.

Excimer PRK testing in the clinic

NASA Astrophysics Data System (ADS)

Forrest, Gary T.

1994-06-01

Testing of the excimer lasers used in PRK requires special considerations in terms of ease of use, day-to-day reliability, and high resolution to see details of beam interference effects. SensorPhysics employs a patented photochromic material on a polyester substrate to record permanent, instant records of the laser and laser system output. Since each SensorCard is used only once concerns about detection device deterioration are not an issue. The SensorCards have a demonstrated resolving power on the order of 0.1 micrometers . A small, portable reading device is used to convert the SensorCard optical density to a mJ/cm2 value. Special software also measures beam uniformity to +/- 1% to provide both qualitative and quantitative analysis. Results of use in clinic environments will be presented. In particular detection of exposure `islands' will be demonstrated. The techniques employed are similar to those we developed for UV laser micromachining and lithography four years ago.

Experimental realization of a polarization-independent ultraviolet/visible coaxial plasmonic metamaterial.

PubMed

van de Haar, M A; Maas, R; Schokker, H; Polman, A

2014-11-12

We report the experimental realization of an optical metamaterial composed of a hexagonal array of coaxial plasmonic metal/insulator/metal waveguides that shows strong polarization-independent optical mode index dispersion in the ultraviolet/blue. The metamaterial is composed of silicon coaxes with a well-defined diameter in the range of 150-168 nm with extremely thin sidewalls (13-15 nm), embedded in a silver film, fabricated using a combination of electron beam lithography, physical vapor deposition, reactive ion etching, and focused ion beam polishing. Using a Mach-Zehnder interferometer the phase advance is measured on several metamaterial samples with different dimensions in the UV/visible part of the spectrum. For all geometries the spectral features as well as the geometry dependence of the data correspond well with numerical finite-difference time domain simulations and the calculated waveguide dispersion diagram, showing a negative mode index between 440 and 500 nm.

Superhydrophobic nanofluidic channels for enhanced electrokinetic conversion

NASA Astrophysics Data System (ADS)

Checco, Antonio; Al Hossain, Aktaruzzaman; Rahmani, Amir; Black, Charles; Doerk, Gregory; Colosqui, Carlos

2017-11-01

We present current efforts in the development of novel slit nanofluidic channels with superhydrophobic nanostructured surfaces designed to enhance hydrodynamic conductivity and improve selective transport and electrokinetic energy conversion efficiencies (mechanical-electrical energy conversion). The nanochannels are fabricated on silicon wafers using UV lithography, and their internal surface is patterned with conical nanostructures (feature size and spacing 30 nm) defined by block copolymer self-assembly and plasma etching. These nanostructures are rendered superhydrophobic by passivation with a hydrophobic silane monolayer. We experimentally characterize hydrodynamic conductivity, effective zeta potentials, and eletrokinetic flows for the patterned nanochannels, comparing against control channels with bare surfaces. Experimental observations are rationalized using both continuum-based modeling and molecular dynamics simulations. Scientific and technical knowledge produced by this work is particularly relevant for sustainable energy conversion and storage, separation processes and water treatment using nanoporous materials. The ONR Contract # N000141613178 and NSF-CBET award# 1605809.

Photoresponsive Polymer Surfaces

NASA Astrophysics Data System (ADS)

Anastasiadis, Spiros H.; Lygeraki, M. I.; Lakiotaki, K.; Varda, M.; Athanassiou, A.; Farsari, M.; Fotakis, C.

2007-03-01

Photochromic spiropyran molecules are utilized as additives for the development of polymer surfaces whose wetting characteristics can reversibly respond to irradiation with laser beams of properly chosen photon energy. The hydrophilicity is enhanced upon UV laser irradiation since the embedded non-polar spiropyran molecules convert to their polar merocyanine isomers, which is reversed upon green laser irradiation. Micropatterning of the photochromic-polymer films using soft lithography or photo-polymerization techniques affects their wettability towards a more hydrophobic or more hydrophilic behavior depending on the dimensions of the patterned features and on the hydrophilicity-hydrophobicity of the flat surface. The light-induced wettability variations of the structured surfaces are enhanced by up to a factor of three as compared to those on the flat surfaces. This enhancement is attributed to the photoinduced reversible volume changes to the imprinted gratings, which additionally contribute to the wettability changes due to the light-induced photochromic interconversions.

Gel integration for microfluidic applications.

PubMed

Zhang, Xuanqi; Li, Lingjun; Luo, Chunxiong

2016-05-21

Molecular diffusive membranes or materials are important for biological applications in microfluidic systems. Hydrogels are typical materials that offer several advantages, such as free diffusion for small molecules, biocompatibility with most cells, temperature sensitivity, relatively low cost, and ease of production. With the development of microfluidic applications, hydrogels can be integrated into microfluidic systems by soft lithography, flow-solid processes or UV cure methods. Due to their special properties, hydrogels are widely used as fluid control modules, biochemical reaction modules or biological application modules in different applications. Although hydrogels have been used in microfluidic systems for more than ten years, many hydrogels' properties and integrated techniques have not been carefully elaborated. Here, we systematically review the physical properties of hydrogels, general methods for gel-microfluidics integration and applications of this field. Advanced topics and the outlook of hydrogel fabrication and applications are also discussed. We hope this review can help researchers choose suitable methods for their applications using hydrogels.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Laser-induced extreme UV radiation sources for manufacturing next-generation integrated circuits

NASA Astrophysics Data System (ADS)

Borisov, V. M.; Vinokhodov, A. Yu; Ivanov, A. S.; Kiryukhin, Yu B.; Mishchenko, V. A.; Prokof'ev, A. V.; Khristoforov, O. B.

2009-10-01

The development of high-power discharge sources emitting in the 13.5±0.135-nm spectral band is of current interest because they are promising for applications in industrial EUV (extreme ultraviolet) lithography for manufacturing integrated circuits according to technological precision standards of 22 nm and smaller. The parameters of EUV sources based on a laser-induced discharge in tin vapours between rotating disc electrodes are investigated. The properties of the discharge initiation by laser radiation at different wavelengths are established and the laser pulse parameters providing the maximum energy characteristics of the EUV source are determined. The EUV source developed in the study emits an average power of 276 W in the 13.5±0.135-nm spectral band on conversion to the solid angle 2π sr in the stationary regime at a pulse repetition rate of 3000 Hz.

Cell-micropatterning by micromolding in capillary technique based on UV polymerization

NASA Astrophysics Data System (ADS)

Park, Min J.; Choi, Won M.; Park, O. O.

2006-01-01

Although optical lithography or photolithography is one of the most well-established techniques for micro, nano-fabrication, its usage with proteins and cells is restricted by steps that must be carried out in harsh organic solvents. Here, we present simple methods for cell-micropatterning using poly(dimethylsiloxane) (PDMS) as a mold. Cell non-adhesive surface or nonfouling surface providing a physico-chemical barrier to cell attachment was introduced for biomaterial pattering, where cells fail to interact with the surface over desired periods of time determined by each application. Poly(ethylene glycol) (PEG) was selected as nonfouling material to inhibit protein adsorption from biological media. The fouling resistance of PEG polymer is often explained by a steric repulsion interaction, resulting from the compression of PEG chains as proteins approach the surface. We also chose fibronectin to direct cell attachment because it is an extracellular matrix protein that is involved in the adhesion and spreading of anchorage-dependent cells. In our experiment, we propose two methods by application of micromolding in capillary (MIMIC) method based on UV polymerization to obtain a surface of alternating PEG and fibronectin. First to fabricate PEG microstructure via MIMIC method, a pre-patterned PDMS mold is placed on a desired substrate, and then the relief structure in the mold forms a network of empty channels. A drop of ethylene glycol monomer solution containing initiator for UV polymerization is placed at the open ends of the network of channels, which is then polymerized by exposure to UV light at room temperature. Once PEG microstructure is fabricated, incubation of the patterned surface in a fibronectin-containing solution allows back-filling of only the bare regions with fibronectin via adsorption. In the alternative method, a substrate is first incubated in a fibronectin-containing solution, leading to the adsorption of fibronectin over the entire surface, and the fibronectin-adsorbed substrate is then micropatterned with the PEG by MIMIC based on UV polymerization. Both methods create reproducible alternating PEG and fibronectin patterns applicable to cell-surface interactions on the microscale.

High precision processing CaF2 application research based on the magnetorheological finishing (MRF) technology

NASA Astrophysics Data System (ADS)

Zhong, Xianyun; Fan, Bin; Wu, Fan

2017-10-01

Single crystal calcium fluoride (CaF2) is the excellent transparent optical substance that has extremely good permeability and refractive index from 120nm wavelength ultraviolet range to 12μm wavelength infrared range and it has widely used in the applications of various advanced optical instrument, such as infrared optical systems (IR), short wavelength optical lithography systems (DUV), as well as high power UV laser systems. Nevertheless, the characteristics of CaF2 material, including low fracture toughness, low hardness, low thermal conductivity and high thermal expansion coefficient, result in that the conventional pitch polishing techniques usually expose to lots of problems, such as subsurface damage, scratches, digs and so on. Single point diamond turning (SPDT) is a prospective technology for manufacture the brittle material, but the residual surface textures or artifacts of SPDT will cause great scattering losses. Meanwhile, the roughness also falls far short from the requirement in the short wavelength optical systems. So, the advanced processing technologies for obtaining the shape accuracy, roughness, surface flaw at the same time need to put forward. In this paper, the authors investigate the Magnetorheological Finishing (MRF) technology for the high precision processing of CaF2 material. We finish the surface accuracy RMS λ/150 and roughness Rq 0.3nm on the concave aspheric from originate shape error 0.7λ and roughness 17nm by the SPDT. The studying of the MRF techniques makes a great effort to the processing level of CaF2 material for the state-of-the-art DUV lithography systems applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Honda, Mitsuhiro; Saito, Yuika, E-mail: yuika@ap.eng.osaka-u.ac.jp; Kawata, Satoshi

We report plasmonic nanoparticle enhanced photocatalysis on titanium dioxide (TiO{sub 2}) in the deep-UV range. Aluminum (Al) nanoparticles fabricated on TiO{sub 2} film increases the reaction rate of photocatalysis by factors as high as 14 under UV irradiation in the range of 260–340 nm. The reaction efficiency has been determined by measuring the decolorization rate of methylene blue applied on the TiO{sub 2} substrate. The enhancement of photocatalysis shows particle size and excitation wavelength dependence, which can be explained by the surface plasmon resonance of Al nanoparticles.

Simulation of the effect of incline incident angle in DMD Maskless Lithography

NASA Astrophysics Data System (ADS)

Liang, L. W.; Zhou, J. Y.; Xiang, L. L.; Wang, B.; Wen, K. H.; Lei, L.

2017-06-01

The aim of this study is to provide a simulation method for investigation of the intensity fluctuation caused by the inclined incident angle in DMD (digital micromirror device) maskless lithography. The simulation consists of eight main processes involving the simplification of the DMD aperture function and light propagation utilizing the non-parallel angular spectrum method. These processes provide a possibility of co-simulation in the spatial frequency domain, which combines the microlens array and DMD in the maskless lithography system. The simulation provided the spot shape and illumination distribution. These two parameters are crucial in determining the exposure dose in the existing maskless lithography system.

Range pattern matching with layer operations and continuous refinements

NASA Astrophysics Data System (ADS)

Tseng, I.-Lun; Lee, Zhao Chuan; Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Ong, Jonathan Yoong Seang

2018-03-01

At advanced and mainstream process nodes (e.g., 7nm, 14nm, 22nm, and 55nm process nodes), lithography hotspots can exist in layouts of integrated circuits even if the layouts pass design rule checking (DRC). Existence of lithography hotspots in a layout can cause manufacturability issues, which can result in yield losses of manufactured integrated circuits. In order to detect lithography hotspots existing in physical layouts, pattern matching (PM) algorithms and commercial PM tools have been developed. However, there are still needs to use DRC tools to perform PM operations. In this paper, we propose a PM synthesis methodology, which uses a continuous refinement technique, for the automatic synthesis of a given lithography hotspot pattern into a DRC deck, which consists of layer operation commands, so that an equivalent PM operation can be performed by executing the synthesized deck with the use of a DRC tool. Note that the proposed methodology can deal with not only exact patterns, but also range patterns. Also, lithography hotspot patterns containing multiple layers can be processed. Experimental results show that the proposed methodology can accurately and efficiently detect lithography hotspots in physical layouts.

Intelligent control system based on ARM for lithography tool

NASA Astrophysics Data System (ADS)

Chen, Changlong; Tang, Xiaoping; Hu, Song; Wang, Nan

2014-08-01

The control system of traditional lithography tool is based on PC and MCU. The PC handles the complex algorithm, human-computer interaction, and communicates with MCU via serial port; The MCU controls motors and electromagnetic valves, etc. This mode has shortcomings like big volume, high power consumption, and wasting of PC resource. In this paper, an embedded intelligent control system of lithography tool, based on ARM, is provided. The control system used S5PV210 as processor, completing the functions of PC in traditional lithography tool, and provided a good human-computer interaction by using LCD and capacitive touch screen. Using Android4.0.3 as operating system, the equipment provided a cool and easy UI which made the control more user-friendly, and implemented remote control and debug, pushing video information of product by network programming. As a result, it's convenient for equipment vendor to provide technical support for users. Finally, compared with traditional lithography tool, this design reduced the PC part, making the hardware resources efficiently used and reducing the cost and volume. Introducing embedded OS and the concepts in "The Internet of things" into the design of lithography tool can be a development trend.

Vectorial mask optimization methods for robust optical lithography

NASA Astrophysics Data System (ADS)

Ma, Xu; Li, Yanqiu; Guo, Xuejia; Dong, Lisong; Arce, Gonzalo R.

2012-10-01

Continuous shrinkage of critical dimension in an integrated circuit impels the development of resolution enhancement techniques for low k1 lithography. Recently, several pixelated optical proximity correction (OPC) and phase-shifting mask (PSM) approaches were developed under scalar imaging models to account for the process variations. However, the lithography systems with larger-NA (NA>0.6) are predominant for current technology nodes, rendering the scalar models inadequate to describe the vector nature of the electromagnetic field that propagates through the optical lithography system. In addition, OPC and PSM algorithms based on scalar models can compensate for wavefront aberrations, but are incapable of mitigating polarization aberrations in practical lithography systems, which can only be dealt with under the vector model. To this end, we focus on developing robust pixelated gradient-based OPC and PSM optimization algorithms aimed at canceling defocus, dose variation, wavefront and polarization aberrations under a vector model. First, an integrative and analytic vector imaging model is applied to formulate the optimization problem, where the effects of process variations are explicitly incorporated in the optimization framework. A steepest descent algorithm is then used to iteratively optimize the mask patterns. Simulations show that the proposed algorithms can effectively improve the process windows of the optical lithography systems.

Holographic lithography for biomedical applications

NASA Astrophysics Data System (ADS)

Stankevicius, E.; Balciunas, E.; Malinauskas, M.; Raciukaitis, G.; Baltriukiene, D.; Bukelskiene, V.

2012-06-01

Fabrication of scaffolds for cell growth with appropriate mechanical characteristics is top-most important for successful creation of tissue. Due to ability of fast fabrication of periodic structures with a different period, the holographic lithography technique is a suitable tool for scaffolds fabrication. The scaffolds fabricated by holographic lithography can be used in various biomedical investigations such as the cellular adhesion, proliferation and viability. These investigations allow selection of the suitable material and geometry of scaffolds which can be used in creation of tissue. Scaffolds fabricated from di-acrylated poly(ethylene glycol) (PEG-DA-258) over a large area by holographic lithography technique are presented in this paper. The PEG-DA scaffolds fabricated by holographic lithography showed good cytocompatibility for rabbit myogenic stem cells. It was observed that adult rabbit muscle-derived myogenic stem cells grew onto PEG-DA scaffolds. They were attached to the pillars and formed cell-cell interactions. It demonstrates that the fabricated structures have potential to be an interconnection channel network for cell-to-cell interactions, flow transport of nutrients and metabolic waste as well as vascular capillary ingrowth. These results are encouraging for further development of holographic lithography by improving its efficiency for microstructuring three-dimensional scaffolds out of biodegradable hydrogels

High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector

PubMed Central

Rivera, Manuel; Velázquez, Rafael; Aldalbahi, Ali; Zhou, Andrew F.; Feng, Peter

2017-01-01

We extend our work on the use of digitally controlled pulsed laser plasma deposition (PLPD) technique to synthesize high quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temperature for applications in high-performance deep UV photodetectors. The obtained sample consists of a large amount of BNNSs partially overlapping one another with random orientations. Each sheet is composed of a few (from 2 to 10) stacked atomic layers exhibiting high transparency due to its highly ordered hBN crystallinity. Deep UV detectors based on the obtained BNNSs were designed, fabricated, and tested. The bias and temperature effects on the photocurrent strength and the signal-to-noise ratio have been carefully characterized and discussed. A significant shift in the cut off wavelength of the BNNSs based photodetectors was observed suggesting a band gap reduction as a result of the BNNSs’ collective structure. The newly designed photodetector presented exceptional properties: a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, and a high signal-to-noise ratio operation even at temperatures as high as 400 °C. In addition, the BNNSs based photodetector exhibited potential for self-powered operation. PMID:28256507

Absorbance detector for high performance liquid chromatography based on a deep-UV light-emitting diode at 235nm.

PubMed

da Silveira Petruci, João Flavio; Liebetanz, Michael G; Cardoso, Arnaldo Alves; Hauser, Peter C

2017-08-25

In this communication, we describe a flow-through optical absorption detector for HPLC using for the first time a deep-UV light-emitting diode with an emission band at 235nm as light source. The detector is also comprised of a UV-sensitive photodiode positioned to enable measurement of radiation through a flow-through cuvette with round aperture of 1mm diameter and optical path length of 10mm, and a second one positioned as reference photodiode; a beam splitter and a power supply. The absorbance was measured and related to the analyte concentration by emulating the Lambert-Beer law with a log-ratio amplifier circuitry. This detector showed noise levels of 0.30mAU, which is comparable with our previous LED-based detectors employing LEDs at 280 and 255nm. The detector was coupled to a HPLC system and successfully evaluated for the determination of the anti-diabetic drugs pioglitazone and glimepiride in an isocratic separation and the benzodiazepines flurazepam, oxazepam and clobazam in a gradient elution. Good linearities (r>0.99), a precision better than 0.85% and limits of detection at sub-ppm levels were achieved. Copyright © 2017 Elsevier B.V. All rights reserved.

UV Raman imaging--a promising tool for astrobiology: comparative Raman studies with different excitation wavelengths on SNC Martian meteorites.

PubMed

Frosch, Torsten; Tarcea, Nicolae; Schmitt, Michael; Thiele, Hans; Langenhorst, Falko; Popp, Jürgen

2007-02-01

The great capabilities of UV Raman imaging have been demonstrated on the three Martian meteorites: Sayh al Uhaymir, Dar al Gani, and Zagami. Raman spectra without disturbing fluorescence and with high signal-to-noise-ratios and full of spectral features were derived. This result is of utmost importance for the development of powerful instruments for space missions. By point scanning the surfaces of the meteorite samples, it was possible for the first time to construct UV-Raman images out of the array of Raman spectra. Deep-UV Raman images are to the best of our knowledge presented for the first time. The images were used for a discussion of the chemical-mineralogical composition and texture of the meteorite surfaces. Comparative Raman studies applying visible and NIR Raman excitation wavelengths demonstrate a much better performance for UV Raman excitation. This comparative study of different Raman excitation wavelengths at the same sample spots was done by constructing a versatile, robust sample holder with a fixed micro-raster. The overall advantages of UV resonance Raman spectroscopy in terms of sensitivity and selectivity are demonstrated and discussed. Finally the application of this new technique for a UV Raman instrument for envisaged astrobiological focused space missions is suggested.

Deep eutectic solvent-based ultrasound-assisted dispersive liquid-liquid microextraction coupled with high-performance liquid chromatography for the determination of ultraviolet filters in water samples.

PubMed

Wang, Huazi; Hu, Lu; Liu, Xinya; Yin, Shujun; Lu, Runhua; Zhang, Sanbing; Zhou, Wenfeng; Gao, Haixiang

2017-09-22

In the present study, a simple and rapid sample preparation method designated ultrasound-assisted dispersive liquid-liquid microextraction based on a deep eutectic solvent (DES) followed by high-performance liquid chromatography with ultraviolet (UV) detection (HPLC-UVD) was developed for the extraction and determination of UV filters from water samples. The model analytes were 2,4-dihydroxybenzophenone (BP-1), benzophenone (BP) and 2-hydroxy-4-methoxybenzophenone (BP-3). The hydrophobic DES was prepared by mixing trioctylmethylammonium chloride (TAC) and decanoic acid (DecA). Various influencing factors (selection of the extractant, amount of DES, ultrasound duration, salt addition, sample volume, sample pH, centrifuge rate and duration) on UV filter recovery were systematically investigated. Under optimal conditions, the proposed method provided good recoveries in the range of 90.2-103.5% and relative standard deviations (inter-day and intra-day precision, n=5) below 5.9%. The enrichment factors for the analytes ranged from 67 to 76. The limits of detection varied from 0.15 to 0.30ngmL -1 , depending on the analytes. The linearities were between 0.5 and 500ngmL -1 for BP-1 and BP and between 1 and 500ngmL -1 for BP-3, with coefficients of determination greater than 0.99. Finally, the proposed method was applied to the determination of UV filters in swimming pool and river water samples, and acceptable relative recoveries ranging from 82.1 to 106.5% were obtained. Copyright © 2017. Published by Elsevier B.V.

Using deep recurrent neural network for direct beam solar irradiance cloud screening

NASA Astrophysics Data System (ADS)

Chen, Maosi; Davis, John M.; Liu, Chaoshun; Sun, Zhibin; Zempila, Melina Maria; Gao, Wei

2017-09-01

Cloud screening is an essential procedure for in-situ calibration and atmospheric properties retrieval on (UV-)MultiFilter Rotating Shadowband Radiometer [(UV-)MFRSR]. Previous study has explored a cloud screening algorithm for direct-beam (UV-)MFRSR voltage measurements based on the stability assumption on a long time period (typically a half day or a whole day). To design such an algorithm requires in-depth understanding of radiative transfer and delicate data manipulation. Recent rapid developments on deep neural network and computation hardware have opened a window for modeling complicated End-to-End systems with a standardized strategy. In this study, a multi-layer dynamic bidirectional recurrent neural network is built for determining the cloudiness on each time point with a 17-year training dataset and tested with another 1-year dataset. The dataset is the daily 3-minute cosine corrected voltages, airmasses, and the corresponding cloud/clear-sky labels at two stations of the USDA UV-B Monitoring and Research Program. The results show that the optimized neural network model (3-layer, 250 hidden units, and 80 epochs of training) has an overall test accuracy of 97.87% (97.56% for the Oklahoma site and 98.16% for the Hawaii site). Generally, the neural network model grasps the key concept of the original model to use data in the entire day rather than short nearby measurements to perform cloud screening. A scrutiny of the logits layer suggests that the neural network model automatically learns a way to calculate a quantity similar to total optical depth and finds an appropriate threshold for cloud screening.

UV-LIGA microfabrication process for sub-terahertz waveguides utilizing multiple layered SU-8 photoresist

NASA Astrophysics Data System (ADS)

Malekabadi, Ali; Paoloni, Claudio

2016-09-01

A microfabrication process based on UV LIGA (German acronym of lithography, electroplating and molding) is proposed for the fabrication of relatively high aspect ratio sub-terahertz (100-1000 GHz) metal waveguides, to be used as a slow wave structure in sub-THz vacuum electron devices. The high accuracy and tight tolerances required to properly support frequencies in the sub-THz range can be only achieved by a stable process with full parameter control. The proposed process, based on SU-8 photoresist, has been developed to satisfy high planar surface requirements for metal sub-THz waveguides. It will be demonstrated that, for a given thickness, it is more effective to stack a number of layers of SU-8 with lower thickness rather than using a single thick layer obtained at lower spin rate. The multiple layer approach provides the planarity and the surface quality required for electroforming of ground planes or assembly surfaces and for assuring low ohmic losses of waveguides. A systematic procedure is provided to calculate soft and post-bake times to produce high homogeneity SU-8 multiple layer coating as a mold for very high quality metal waveguides. A double corrugated waveguide designed for 0.3 THz operating frequency, to be used in vacuum electronic devices, was fabricated as test structure. The proposed process based on UV LIGA will enable low cost production of high accuracy sub-THz 3D waveguides. This is fundamental for producing a new generation of affordable sub-THz vacuum electron devices, to fill the technological gap that still prevents a wide diffusion of numerous applications based on THz radiation.

Recent developments of x-ray lithography in Canada

NASA Astrophysics Data System (ADS)

Chaker, Mohamed; Boily, Stephane; Ginovker, A.; Jean, Alain; Kieffer, Jean-Claude; Mercier, P. P.; Pepin, Henri; Leung, Pak; Currie, John F.; Lafontaine, Hugues

1991-08-01

An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

A Concept For A High Resolution Optical Lithographic System For Producing One-Half Micron Linewidths

NASA Astrophysics Data System (ADS)

Reynolds, George O.

1986-08-01

This paper describes a concept for developing an optical printer having a one-half micron linewidth capability to meet the pro-jected needs of future Integrated Circuit (IC) production facilities. Our approach for meeting this objective is to combine the appro-priate features of the current 1:1 reflective optical printers with the stepping characteristic of the 10:1 refractive optical systems. The proposed, very deep, UV step and repeat system has the potential of reaching a one-half micron linewidth production goal entirely with optical technology. The key subsystem elements necessary to achieve these goals are discussed. These subsystems include a reflective optical system, a 10:1 stepper configuration having a linearity limit of 0.5 microns and an FOV of 15 mm, a deep UV laser source, photoresists having the required sensitivity, an alignment capability of 500 Å , a focal sensor having a 500 Å tolerance and the associated mechanical, electronic and environmental controls compatible with a produc-tion throughput of 60-four inch wafers/hour.

Performance Assessment of a Plate Beam Splitter for Deep-Ultraviolet Raman Measurements with a Spatial Heterodyne Raman Spectrometer.

PubMed

Lamsal, Nirmal; Angel, S Michael

2017-06-01

In earlier works, we demonstrated a high-resolution spatial heterodyne Raman spectrometer (SHRS) for deep-ultraviolet (UV) Raman measurements, and showed its ability to measure UV light-sensitive compounds using a large laser spot size. We recently modified the SHRS by replacing the cube beam splitter (BS) with a custom plate beam splitter with higher light transmission, an optimized reflectance/transmission ratio, higher surface flatness, and better refractive index homogeneity than the cube beam splitter. Ultraviolet Raman measurements were performed using a SHRS modified to use the plate beam splitter and a matching compensator plate and compared to the previously described cube beam splitter setup. Raman spectra obtained using the modified SHRS exhibit much higher signals and signal-to-noise (S/N) ratio and show fewer spectral artifacts. In this paper, we discuss the plate beam splitter SHRS design features, the advantages over previous designs, and discuss some general SHRS issues such as spectral bandwidth, S/N ratio characteristics, and optical efficiency.

Fibrillation mechanism of a model intrinsically disordered protein revealed by 2D correlation deep UV resonance Raman spectroscopy.

PubMed

Sikirzhytski, Vitali; Topilina, Natalya I; Takor, Gaius A; Higashiya, Seiichiro; Welch, John T; Uversky, Vladimir N; Lednev, Igor K

2012-05-14

Understanding of numerous biological functions of intrinsically disordered proteins (IDPs) is of significant interest to modern life science research. A large variety of serious debilitating diseases are associated with the malfunction of IDPs including neurodegenerative disorders and systemic amyloidosis. Here we report on the molecular mechanism of amyloid fibrillation of a model IDP (YE8) using 2D correlation deep UV resonance Raman spectroscopy. YE8 is a genetically engineered polypeptide, which is completely unordered at neutral pH yet exhibits all properties of a fibrillogenic protein at low pH. The very first step of the fibrillation process involves structural rearrangements of YE8 at the global structure level without the detectable appearance of secondary structural elements. The formation of β-sheet species follows the global structural changes and proceeds via the simultaneous formation of turns and β-strands. The kinetic mechanism revealed is an important new contribution to understanding of the general fibrillation mechanism proposed for IDP.

Compact and portable multiline UV and visible Raman lasers in hydrogen-filled HC-PCF.

PubMed

Wang, Y Y; Couny, F; Light, P S; Mangan, B J; Benabid, F

2010-04-15

We report on the realization of compact UV visible multiline Raman lasers based on two types of hydrogen-filled hollow-core photonic crystal fiber. The first, with a large pitch Kagome lattice structure, offers a broad spectral coverage from near IR through to the much sought after yellow, deep-blue and UV, whereas the other, based on photonic bandgap guidance, presents a pump conversion concentrated in the visible region. The high Raman efficiency achieved through these fibers allows for compact, portable diode-pumped solid-state lasers to be used as pumps. Each discrete component of this laser system exhibits a spectral density several orders of magnitude larger than what is achieved with supercontinuum sources and a narrow linewidth, making it an ideal candidate for forensics and biomedical applications.

Tandem array of nanoelectronic readers embedded coplanar to a fluidic nanochannel for correlated single biopolymer analysis

PubMed Central

Lesser-Rojas, Leonardo; Sriram, K. K.; Liao, Kuo-Tang; Lai, Shui-Chin; Kuo, Pai-Chia; Chu, Ming-Lee; Chou, Chia-Fu

2014-01-01

We have developed a two-step electron-beam lithography process to fabricate a tandem array of three pairs of tip-like gold nanoelectronic detectors with electrode gap size as small as 9 nm, embedded in a coplanar fashion to 60 nm deep, 100 nm wide, and up to 150 μm long nanochannels coupled to a world-micro-nanofluidic interface for easy sample introduction. Experimental tests with a sealed device using DNA-protein complexes demonstrate the coplanarity of the nanoelectrodes to the nanochannel surface. Further, this device could improve transverse current detection by correlated time-of-flight measurements of translocating samples, and serve as an autocalibrated velocimeter and nanoscale tandem Coulter counters for single molecule analysis of heterogeneous samples. PMID:24753731

Defect and field-enhancement characterization through electron-beam-induced current analysis

NASA Astrophysics Data System (ADS)

Umezawa, Hitoshi; Gima, Hiroki; Driche, Khaled; Kato, Yukako; Yoshitake, Tsuyoshi; Mokuno, Yoshiaki; Gheeraert, Etienne

2017-05-01

To investigate the effects of defects and field enhancement in diamond power devices, a biased Schottky barrier diode was characterized by electron-beam-induced current (EBIC) analysis. The nonuniform distribution of the electrical field was revealed by bright spots on the laterally expanded depletion layer of the EBIC intensity map when the applied electrical field exceeded 0.95 MV/cm. The nonuniformity is partly due to a structural effect: the roughness at the edge of the Schottky electrode, induced by lithography and lift-off processes. A second family of spots was shown to increase the leakage current of the device. The time constant associated with this second spot family was 0.98 ms, which is three orders of magnitude shorter than that for defects previously characterized by deep-level transient spectroscopy.

Study on photochemical analysis system (VLES) for EUV lithography

NASA Astrophysics Data System (ADS)

Sekiguchi, A.; Kono, Y.; Kadoi, M.; Minami, Y.; Kozawa, T.; Tagawa, S.; Gustafson, D.; Blackborow, P.

2007-03-01

A system for photo-chemical analysis of EUV lithography processes has been developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch (Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a measurement system RDA (Litho Tech Japan) for the development rate of photo-resists, and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of EUV lithography can be performed without any lithography tool (Stepper and Scanner system) that is capable of imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm wavelength. The simulation successfully predicts the resist behavior. Thus it is confirmed that the system enables efficient evaluation of the performance of EUV lithography processes.

Modeling of projection electron lithography

NASA Astrophysics Data System (ADS)

Mack, Chris A.

2000-07-01

Projection Electron Lithography (PEL) has recently become a leading candidate for the next generation of lithography systems after the successful demonstration of SCAPEL by Lucent Technologies and PREVAIL by IBM. These systems use a scattering membrane mask followed by a lens with limited angular acceptance range to form an image of the mask when illuminated by high energy electrons. This paper presents an initial modeling system for such types of projection electron lithography systems. Monte Carlo modeling of electron scattering within the mask structure creates an effective mask 'diffraction' pattern, to borrow the standard optical terminology. A cutoff of this scattered pattern by the imaging 'lens' provides an electron energy distribution striking the wafer. This distribution is then convolved with a 'point spread function,' the results of a Monte Carlo scattering calculation of a point beam of electrons striking the resist coated substrate and including the effects of beam blur. Resist exposure and development models from standard electron beam lithography simulation are used to simulate the final three-dimensional resist profile.

EB and EUV lithography using inedible cellulose-based biomass resist material

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2016-03-01

The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

Combination photo and electron beam lithography with polymethyl methacrylate (PMMA) resist.

PubMed

Carbaugh, Daniel J; Pandya, Sneha G; Wright, Jason T; Kaya, Savas; Rahman, Faiz

2017-11-10

We describe techniques for performing photolithography and electron beam lithography in succession on the same resist-covered substrate. Larger openings are defined in the resist film through photolithography whereas smaller openings are defined through conventional electron beam lithography. The two processes are carried out one after the other and without an intermediate wet development step. At the conclusion of the two exposures, the resist film is developed once to reveal both large and small openings. Interestingly, these techniques are applicable to both positive and negative tone lithographies with both optical and electron beam exposure. Polymethyl methacrylate, by itself or mixed with a photocatalytic cross-linking agent, is used for this purpose. We demonstrate that such resists are sensitive to both ultraviolet and electron beam irradiation. All four possible combinations, consisting of optical and electron beam lithographies, carried out in positive and negative tone modes have been described. Demonstration grating structures have been shown and process conditions have been described for all four cases.

Controlling bridging and pinching with pixel-based mask for inverse lithography

NASA Astrophysics Data System (ADS)

Kobelkov, Sergey; Tritchkov, Alexander; Han, JiWan

2016-03-01

Inverse Lithography Technology (ILT) has become a viable computational lithography candidate in recent years as it can produce mask output that results in process latitude and CD control in the fab that is hard to match with conventional OPC/SRAF insertion approaches. An approach to solving the inverse lithography problem as a nonlinear, constrained minimization problem over a domain mask pixels was suggested in the paper by Y. Granik "Fast pixel-based mask optimization for inverse lithography" in 2006. The present paper extends this method to satisfy bridging and pinching constraints imposed on print contours. Namely, there are suggested objective functions expressing penalty for constraints violations, and their minimization with gradient descent methods is considered. This approach has been tested with an ILT-based Local Printability Enhancement (LPTM) tool in an automated flow to eliminate hotspots that can be present on the full chip after conventional SRAF placement/OPC and has been applied in 14nm, 10nm node production, single and multiple-patterning flows.

Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

NASA Astrophysics Data System (ADS)

Zehetner, J.; Vanko, G.; Dzuba, J.; Ryger, I.; Lalinsky, T.; Benkler, Manuel; Lucki, Michal

2015-05-01

AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. In addition we investigate ferroelectric thin films for integration into micro-electro-mechanical-systems (MEMS). Creation of appropriate diaphragms and/or cantilevers out of SiC is necessary for further improvement of sensing properties of such MEMS sensors. For example sensitivity of the AlGaN/GaN based MEMS pressure sensor can be modified by membrane thickness. We demonstrated that a 4H-SiC 80μm thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350μm thick 4H-SiC substrate we produced an array of 275μm deep and 1000μm to 3000μm of diameter blind holes without damaging the 2μm AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design. The risk to harm or damage the function of thin films was eliminated by that means. Some defects in the ablated membranes are also affected by the polarisation of the laser light. Ripple structures oriented perpendicular to the laser polarisation promote creation of pin holes which would perforate a thin membrane. We developed an ablation technique strongly inhibiting formation of ripples and pin poles.

Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

DOE PAGES

Jiang, H. X.; Lin, Jing Yu

2016-09-07

This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BNmore » epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices.« less

Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, H. X.; Lin, Jing Yu

This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BNmore » epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices.« less

A green ultrasonic-assisted liquid-liquid microextraction based on deep eutectic solvent for the HPLC-UV determination of ferulic, caffeic and cinnamic acid from olive, almond, sesame and cinnamon oil.

PubMed

Khezeli, Tahere; Daneshfar, Ali; Sahraei, Reza

2016-04-01

A simple, inexpensive and sensitive ultrasonic-assisted liquid-liquid microextraction method based on deep eutectic solvent (UALLME-DES) was used for the extraction of three phenolic acids (ferulic, caffeic and cinnamic) from vegetable oils. In a typical experiment, deep eutectic solvent as green extraction solvent was added to n-hexane (as a typical oil medium) containing target analytes. Subsequently, the extraction was accelerated by sonication. After the extraction, phase separation (DES rich phase/n-hexane phase) was performed by centrifugation. DES rich phase (lower phase) was withdrawn by a micro-syringe and submitted to isocratic reverse-phase HPLC with UV detection. Under optimum conditions obtained by response surface methodology (RSM) and desirability function (DF), the method has good linear calibration ranges (between 1.30 and 1000 µg L(-1)), coefficients of determination (r(2)>0.9949) and low limits of detection (between 0.39 and 0.63 µg L(-1)). This procedure was successfully applied to the determination of target analytes in olive, almond, sesame and cinnamon oil samples. The relative mean recoveries ranged from 94.7% to 104.6%. Copyright © 2015 Elsevier B.V. All rights reserved.

Evaluation of new natural deep eutectic solvents for the extraction of isoflavones from soy products.

PubMed

Bajkacz, Sylwia; Adamek, Jakub

2017-06-01

Natural deep eutectic solvents (NADESs) are considered to be new, safe solvents in green chemistry that can be widely used in many chemical processes such as extraction or synthesis. In this study, a simple extraction method based on NADES was used for the isolation of isoflavones (daidzin, genistin, genistein, daidzein) from soy products. Seventeen different NADES systems each including two or three components were tested. Multivariate data analysis revealed that NADES based on a 30% solution of choline chloride: citric acid (molar ratio of 1:1) are the most effective systems for the extraction of isoflavones from soy products. After extraction, the analytes were detected and quantified using ultra-high performance liquid chromatography with ultraviolet detection (UHPLC-UV). The proposed NADES extraction procedure achieved enrichment factors up to 598 for isoflavones and the recoveries of the analytes were in the range 64.7-99.2%. The developed NADES extraction procedure and UHPLC-UV determination method was successfully applied for the analysis of isoflavones in soy-containing food samples. The obtained results indicated that new natural deep eutectic solvents could be an alternative to traditional solvents for the extraction of isoflavones and can be used as sustainable and safe extraction media for another applications. Copyright © 2017 Elsevier B.V. All rights reserved.

The Evolution of the Galaxy Rest-Frame Ultraviolet Luminosity Function Over the First Two Billion Years

NASA Technical Reports Server (NTRS)

Finkelstein, Steven L.; Ryan, Russell E., Jr.; Papovich, Casey; Dickinson, Mark; Song, Mimi; Somerville, Rachel; Ferguson, Henry C.; Salmon, Brett; Giavalisco, Mauro; Koekomoer, Anton M.;

Fabrication of Three-Dimensional Imprint Lithography Templates by Colloidal Dispersions

DTIC Science & Technology

2011-03-06

Dispersions A. Marcia Almanza-Workman, Taussig P. Carl, Albert H. Jeans, Robert L. Cobene HP Laboratories HPL-2011-32 Flexible displays, Self aligned...imprint lithography, stamps, fluorothermoplastics, latex Self -aligned imprint lithography (SAIL) enables patterning and alignment of submicron-sized...features on flexible substrates in the roll-to roll (R2R) environment. Soft molds made of elastomers have been used as stamps to pattern three

OML: optical maskless lithography for economic design prototyping and small-volume production

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Bleeker, Arno; Hintersteiner, Jason; Troost, Kars; Freyer, Jorge; van der Mast, Karel

2004-05-01

The business case for Maskless Lithography is more compelling than ever before, due to more critical processes, rising mask costs and shorter product cycles. The economics of Maskless Lithography gives a crossover volume from Maskless to mask-based lithography at surprisingly many wafers per mask for surprisingly few wafers per hour throughput. Also, small-volume production will in many cases be more economical with Maskless Lithography, even when compared to "shuttle" schemes, reticles with multiple layers, etc. The full benefit of Maskless Lithography is only achievable by duplicating processes that are compatible with volume production processes on conventional scanners. This can be accomplished by the integration of pattern generators based on spatial light modulator technology with state-of-the-art optical scanner systems. This paper reports on the system design of an Optical Maskless Scanner in development by ASML and Micronic: small-field optics with high demagnification, variable NA and illumination schemes, spatial light modulators with millions of MEMS mirrors on CMOS drivers, a data path with a sustained data flow of more than 250 GPixels per second, stitching of sub-fields to scanner fields, and rasterization and writing strategies for throughput and good image fidelity. Predicted lithographic performance based on image simulations is also shown.

Keck Deep Fields. III. Luminosity-dependent Evolution of the Ultraviolet Luminosity and Star Formation Rate Densities at z~4, 3, and 2

NASA Astrophysics Data System (ADS)

Sawicki, Marcin; Thompson, David

2006-09-01

We use our very deep UnGRI catalog of z~4, 3, and 2 UV-selected star-forming galaxies to study the cosmological evolution of the rest-frame 1700 Å luminosity density. The ability to reliably constrain the contribution of faint galaxies is critical here, and our data do so by reaching deep into the galaxy population, to M*LBG+2 at z~4 and deeper still at lower redshifts (M*LBG=-21.0 and L*LBG is the corresponding luminosity). We find that the luminosity density at z>~2 is dominated by the hitherto poorly studied galaxies fainter than L*LBG, and, indeed, the bulk of the UV light at these epochs comes from galaxies in the rather narrow luminosity range L=(0.1-1)L*LBG. Overall, there is a gradual rise in total luminosity density starting at >~4 (we find twice as much UV light at z~3 as at z~4), followed by a shallow peak or plateau within z~3-1, finally followed by the well-known plunge to z~0. Within this total picture, luminosity density in sub-L*LBG galaxies at z>~2 evolves more rapidly than that in more luminous objects; this trend is reversed at lower redshifts, z<~1-a reversal that is reminiscent of galaxy downsizing. We find that within the context of commonly used models there seemingly are not enough faint or bright LBGs to maintain ionization of intergalactic gas even as recently as z~4, and the problem becomes worse at higher redshifts: apparently the universe must be easier to reionize than some recent studies have assumed. Nevertheless, sub-L*LBG galaxies do dominate the total UV luminosity density at z>~2, and this dominance highlights the need for follow-up studies that will teach us more about these very numerous but thus far largely unexplored systems. Based on data obtained at the W. M. Keck Observatory, which is operated as a scientific partnership among the California Institute of Technology, the University of California, and NASA and was made possible by the generous financial support of the W. M. Keck Foundation.

Rigorous ILT optimization for advanced patterning and design-process co-optimization

NASA Astrophysics Data System (ADS)

Selinidis, Kosta; Kuechler, Bernd; Cai, Howard; Braam, Kyle; Hoppe, Wolfgang; Domnenko, Vitaly; Poonawala, Amyn; Xiao, Guangming

2018-03-01

Despite the large difficulties involved in extending 193i multiple patterning and the slow ramp of EUV lithography to full manufacturing readiness, the pace of development for new technology node variations has been accelerating. Multiple new variations of new and existing technology nodes have been introduced for a range of device applications; each variation with at least a few new process integration methods, layout constructs and/or design rules. This had led to a strong increase in the demand for predictive technology tools which can be used to quickly guide important patterning and design co-optimization decisions. In this paper, we introduce a novel hybrid predictive patterning method combining two patterning technologies which have each individually been widely used for process tuning, mask correction and process-design cooptimization. These technologies are rigorous lithography simulation and inverse lithography technology (ILT). Rigorous lithography simulation has been extensively used for process development/tuning, lithography tool user setup, photoresist hot-spot detection, photoresist-etch interaction analysis, lithography-TCAD interactions/sensitivities, source optimization and basic lithography design rule exploration. ILT has been extensively used in a range of lithographic areas including logic hot-spot fixing, memory layout correction, dense memory cell optimization, assist feature (AF) optimization, source optimization, complex patterning design rules and design-technology co-optimization (DTCO). The combined optimization capability of these two technologies will therefore have a wide range of useful applications. We investigate the benefits of the new functionality for a few of these advanced applications including correction for photoresist top loss and resist scumming hotspots.

Data sharing system for lithography APC

NASA Astrophysics Data System (ADS)

Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

2007-03-01

We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

NASA Astrophysics Data System (ADS)

Tian, Yaolan; Isotalo, Tero J.; Konttinen, Mikko P.; Li, Jiawei; Heiskanen, Samuli; Geng, Zhuoran; Maasilta, Ilari J.

2017-02-01

We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional (3D) colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 160 °C, the exposure to the resist developer and the exposure to acetone, all of which are required for the electron-beam lithography step. Moreover, we show that by depositing an aluminum oxide capping layer on top of the colloidal crystal after the e-beam irradiation, the surface is smooth enough so that continuous metal wiring can be deposited by the electron-beam lithography. Finally, we also demonstrate a way to self-assemble PS colloidal crystals into a microscale container, which was fabricated using direct-write 3D laser-lithography. Metallic wiring was also successfully integrated with the combination of a container structure and a PS colloidal crystal. Our goal is to make a device for studies of thermal transport in 3D phononic crystals, but other phononic or photonic crystal applications could also be envisioned.

Lithography for enabling advances in integrated circuits and devices.

PubMed

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Ultra-compact imaging system based on multi-aperture architecture

NASA Astrophysics Data System (ADS)

Meyer, Julia; Brückner, Andreas; Leitel, Robert; Dannberg, Peter; Bräuer, Andreas; Tünnermann, Andreas

2011-03-01

As a matter of course, cameras are integrated in the field of information and communication technology. It can be observed, that there is a trend that those cameras get smaller and at the same time cheaper. Because single aperture have a limit of miniaturization, while simultaneously keeping the same space-bandwidth-product and transmitting a wide field of view, there is a need of new ideas like the multi aperture optical systems. In the proposed camera system the image is formed with many different channels each consisting of four microlenses which are arranged one after another in different microlens arrays. A partial image which fits together with the neighbouring one is formed in every single channel, so that a real erect image is generated and a conventional image sensor can be used. The microoptical fabrication process and the assembly are well established and can be carried out on wafer-level. Laser writing is used for the fabrication of the masks. UV-lithography, a reflow process and UV-molding is needed for the fabrication of the apertures and the lenses. The developed system is very small in terms of both length and lateral dimensions and has a VGA resolution and a diagonal field of view of 65 degrees. This microoptical vision system is appropriate for being implemented in electronic devices such as webcams integrated in notebookdisplays.

High-yield, ultrafast, surface plasmon-enhanced, Au nanorod optical field electron emitter arrays.

PubMed

Hobbs, Richard G; Yang, Yujia; Fallahi, Arya; Keathley, Philip D; De Leo, Eva; Kärtner, Franz X; Graves, William S; Berggren, Karl K

2014-11-25

Here we demonstrate the design, fabrication, and characterization of ultrafast, surface-plasmon enhanced Au nanorod optical field emitter arrays. We present a quantitative study of electron emission from Au nanorod arrays fabricated by high-resolution electron-beam lithography and excited by 35 fs pulses of 800 nm light. We present accurate models for both the optical field enhancement of Au nanorods within high-density arrays, and electron emission from those nanorods. We have also studied the effects of surface plasmon damping induced by metallic interface layers at the substrate/nanorod interface on near-field enhancement and electron emission. We have identified the peak optical field at which the electron emission mechanism transitions from a 3-photon absorption mechanism to strong-field tunneling emission. Moreover, we have investigated the effects of nanorod array density on nanorod charge yield, including measurement of space-charge effects. The Au nanorod photocathodes presented in this work display 100-1000 times higher conversion efficiency relative to previously reported UV triggered emission from planar Au photocathodes. Consequently, the Au nanorod arrays triggered by ultrafast pulses of 800 nm light in this work may outperform equivalent UV-triggered Au photocathodes, while also offering nanostructuring of the electron pulse produced from such a cathode, which is of interest for X-ray free-electron laser (XFEL) development where nanostructured electron pulses may facilitate more efficient and brighter XFEL radiation.

Deep UV Native Fluorescence Imaging of Antarctic Cryptoendolithic Communities

NASA Technical Reports Server (NTRS)

Storrie-Lombardi, M. C.; Douglas, S.; Sun, H.; McDonald, G. D.; Bhartia, R.; Nealson, K. H.; Hug, W. F.

2001-01-01

An interdisciplinary team at the Jet Propulsion Laboratory Center for Life Detection has embarked on a project to provide in situ chemical and morphological characterization of Antarctic cryptoendolithic microbial communities. We present here in situ deep ultraviolet (UV) native fluorescence and environmental scanning electron microscopy images transiting 8.5 mm into a sandstone sample from the Antarctic Dry Valleys. The deep ultraviolet imaging system employs 224.3, 248.6, and 325 nm lasers to elicit differential fluorescence and resonance Raman responses from biomolecules and minerals. The 224.3 and 248.6 nm lasers elicit a fluorescence response from the aromatic amino and nucleic acids. Excitation at 325 nm may elicit activity from a variety of biomolecules, but is more likely to elicit mineral fluorescence. The resultant fluorescence images provide in situ chemical and morphological maps of microorganisms and the associated organic matrix. Visible broadband reflectance images provide orientation against the mineral background. Environmental scanning electron micrographs provided detailed morphological information. The technique has made possible the construction of detailed fluorescent maps extending from the surface of an Antarctic sandstone sample to a depth of 8.5 mm. The images detect no evidence of microbial life in the superficial 0.2 mm crustal layer. The black lichen component between 0.3 and 0.5 mm deep absorbs all wavelengths of both laser and broadband illumination. Filamentous deep ultraviolet native fluorescent activity dominates in the white layer between 0.6 mm and 5.0 mm from the surface. These filamentous forms are fungi that continue into the red (iron-rich) region of the sample extending from 5.0 to 8.5 mm. Using differential image subtraction techniques it is possible to identify fungal nuclei. The ultraviolet response is markedly attenuated in this region, apparently from the absorption of ultraviolet light by iron-rich particles coating the filaments. Below 8.5 mm the filamentous morphology of the upper layers gives way to punctate 1-2 micron particles evidencing fluorescent activity following excitation at both deep ultraviolet wavelengths.

Quantum Phenomena in High Energy Density Plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murnane, Margaret; Kapteyn, Henry

The possibility of implementing efficient (phase matched) HHG upconversion of deep- UV lasers in multiply-ionized plasmas, with potentially unprecedented conversion efficiency is a fascinating prospect. HHG results from the extreme nonlinear response of matter to intense laser light:high harmonics are radiated as a result of a quantum coherent electron recollision process that occurs during laser field ionization of an atom. Under current support from this grant in work published in Science in 2015, we discovered a new regime of bright HHG in highly-ionized plasmas driven by intense UV lasers, that generates bright harmonics to photon energies >280eV

Laser synthesis and spectroscopy of acetonitrile/silver nanoparticles

NASA Astrophysics Data System (ADS)

Akin, S. T.; Liu, X.; Duncan, M. A.

2015-11-01

Silver nanoparticles with acetonitrile ligands are produced in a laser ablation flow reactor. Excimer laser ablation produces gas phase metal clusters which are thermalized with helium or argon collisions in the flowtube, and reactions with acetonitrile vapor coordinate this ligand to the particle surface. The gaseous mixture is captured in a cryogenic trap; warming produces a solution of excess ligand and coated particles. TEM images reveal particle sizes of 10-30 nm diameter. UV-vis absorption and fluorescence spectra are compared to those of standard silver nanoparticles with surfactant coatings. Deep-UV ligand absorption is strongly enhanced by nanoparticle adsorption.

Interconnections in ULSI: Correlation and Crosstalk

DTIC Science & Technology

1992-12-31

basic tool is electron beam lithography of poly (methyl methacrylate) (PMMA). The two central issues to creating very dense patterns as described...direct lithographic techniques. Fig. 2: Ti/Au (2 nm/15 nm) grating with 38 nm pitch fabricated by electron beam lithography using our high contrast...G. H. Bernstein, G. Bazan, and D. A. Hill, "Spatial Density of Lines in PMMA by Electron Beam Lithography ," Journal of Vacuum Science and Technology

Optofluidic encapsulation and manipulation of silicon microchips using image processing based optofluidic maskless lithography and railed microfluidics.

PubMed

Chung, Su Eun; Lee, Seung Ah; Kim, Jiyun; Kwon, Sunghoon

2009-10-07

We demonstrate optofluidic encapsulation of silicon microchips using image processing based optofluidic maskless lithography and manipulation using railed microfluidics. Optofluidic maskless lithography is a dynamic photopolymerization technique of free-floating microstructures within a fluidic channel using spatial light modulator. Using optofluidic maskless lithography via computer-vision aided image processing, polymer encapsulants are fabricated for chip protection and guiding-fins for efficient chip conveying within a fluidic channel. Encapsulated silicon chips with guiding-fins are assembled using railed microfluidics, which is an efficient guiding and heterogeneous self-assembly system of microcomponents. With our technology, externally fabricated silicon microchips are encapsulated, fluidically guided and self-assembled potentially enabling low cost fluidic manipulation and assembly of integrated circuits.

Online UV-visible spectroscopy and multivariate curve resolution as powerful tool for model-free investigation of laccase-catalysed oxidation.

PubMed

Kandelbauer, A; Kessler, W; Kessler, R W

2008-03-01

The laccase-catalysed transformation of indigo carmine (IC) with and without a redox active mediator was studied using online UV-visible spectroscopy. Deconvolution of the mixture spectra obtained during the reaction was performed on a model-free basis using multivariate curve resolution (MCR). Thereby, the time courses of educts, products, and reaction intermediates involved in the transformation were reconstructed without prior mechanistic assumptions. Furthermore, the spectral signature of a reactive intermediate which could not have been detected by a classical hard-modelling approach was extracted from the chemometric analysis. The findings suggest that the combined use of UV-visible spectroscopy and MCR may lead to unexpectedly deep mechanistic evidence otherwise buried in the experimental data. Thus, although rather an unspecific method, UV-visible spectroscopy can prove useful in the monitoring of chemical reactions when combined with MCR. This offers a wide range of chemists a cheap and readily available, highly sensitive tool for chemical reaction online monitoring.

Mirror coatings for large aperture UV optical infrared telescope optics

NASA Astrophysics Data System (ADS)

Balasubramanian, Kunjithapatham; Hennessy, John; Raouf, Nasrat; Nikzad, Shouleh; Del Hoyo, Javier; Quijada, Manuel

2017-09-01

Large space telescope concepts such as LUVOIR and HabEx aiming for observations from far UV to near IR require advanced coating technologies to enable efficient gathering of light with important spectral signatures including those in far UV region down to 90nm. Typical Aluminum mirrors protected with MgF2 fall short of the requirements below 120nm. New and improved coatings are sought to protect aluminum from oxidizing readily in normal environment causing severe absorption and reduction of reflectance in the deep UV. Choice of materials and the process of applying coatings present challenges. Here we present the progress achieved to date with experimental investigations of coatings at JPL and at GSFC and discuss the path forward to achieve high reflectance in the spectral region from 90 to 300nm without degrading performance in the visible and NIR regions taking into account durability concerns when the mirrors are exposed to normal laboratory environment as well as high humidity conditions. Reflectivity uniformity required on these mirrors is also discussed.

Fundamental Scaling of Microplasmas and Tunable UV Light Generation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manginell, Ronald P.; Sillerud, Colin Halliday; Hopkins, Matthew M.

2016-11-01

The temporal evolution of spectral lines from microplasma devices (MD) was studied, including impurity transitions. Long-wavelength emission diminishes more rapidly than deep UV with decreasing pulse width and RF operation. Thus, switching from DC to short pulsed or RF operation, UV emissions can be suppressed, allowing for real-time tuning of the ionization energy of a microplasma photo-ionization source, which is useful for chemical and atomic physics. Scaling allows MD to operate near atmospheric pressure where excimer states are efficiently created and emit down to 65 nm; laser emissions fall off below 200 nm, making MD light sources attractive for deepmore » UV use. A first fully-kinetic three-dimensional model was developed that explicitly calculates electron-energy distribution function. This, and non-continuum effects, were studied with the model and how they are impacted by geometry and transient or DC operation. Finally, a global non-dimensional model was developed to help explain general trends MD physics.« less

The Galex Time Domain Survey. I. Selection And Classification of Over a Thousand Ultraviolet Variable Sources

NASA Technical Reports Server (NTRS)

Gezari, S.; Martin, D. C.; Forster, K.; Neill, J. D.; Huber, M.; Heckman, T.; Bianchi, L.; Morrissey, P.; Neff, S. G.; Seibert, M.;

Dust attenuation in 2 < z < 3 star-forming galaxies from deep ALMA observations of the Hubble Ultra Deep Field

NASA Astrophysics Data System (ADS)

McLure, R. J.; Dunlop, J. S.; Cullen, F.; Bourne, N.; Best, P. N.; Khochfar, S.; Bowler, R. A. A.; Biggs, A. D.; Geach, J. E.; Scott, D.; Michałowski, M. J.; Rujopakarn, W.; van Kampen, E.; Kirkpatrick, A.; Pope, A.

2018-05-01

We present the results of a new study of the relationship between infrared excess (IRX ≡ LIR/LUV), ultraviolet (UV) spectral slope (β) and stellar mass at redshifts 2 < z < 3, based on a deep Atacama Large Millimeter Array (ALMA) 1.3-mm continuum mosaic of the Hubble Ultra Deep Field. Excluding the most heavily obscured sources, we use a stacking analysis to show that z ≃ 2.5 star-forming galaxies in the mass range 9.25≤ log (M_{\\ast }/M_{⊙}) ≤ 10.75 are fully consistent with the IRX-β relation expected for a relatively grey attenuation curve, similar to the commonly adopted Calzetti law. Based on a large, mass-complete sample of 2 ≤ z ≤ 3 star-forming galaxies drawn from multiple surveys, we proceed to derive a new empirical relationship between β and stellar mass, making it possible to predict UV attenuation (A1600) and IRX as a function of stellar mass, for any assumed attenuation law. Once again, we find that z ≃ 2.5 star-forming galaxies follow A1600-M* and IRX-M* relations consistent with a relatively grey attenuation law, and find no compelling evidence that star-forming galaxies at this epoch follow a reddening law as steep as the Small Magellanic Cloud (SMC) extinction curve. In fact, we use a simple simulation to demonstrate that previous determinations of the IRX-β relation may have been biased towards low values of IRX at red values of β, mimicking the signature expected for an SMC-like dust law. We show that this provides a plausible mechanism for reconciling apparently contradictory results in the literature and that, based on typical measurement uncertainties, stellar mass provides a cleaner prediction of UV attenuation than β. Although the situation at lower stellar masses remains uncertain, we conclude that for 2 < z < 3 star-forming galaxies with log (M_{\\ast }/M_{⊙}) ≥ 9.75, both the IRX-β and IRX-M* relations are well described by a Calzetti-like attenuation law.

The Evolution of the Faint End of the UV Luminosity Function during the Peak Epoch of Star Formation (1 < z < 3)

NASA Astrophysics Data System (ADS)

Alavi, Anahita; Siana, Brian; Richard, Johan; Rafelski, Marc; Jauzac, Mathilde; Limousin, Marceau; Freeman, William R.; Scarlata, Claudia; Robertson, Brant; Stark, Daniel P.; Teplitz, Harry I.; Desai, Vandana

2016-11-01

We present a robust measurement of the rest-frame UV luminosity function (LF) and its evolution during the peak epoch of cosmic star formation at 1\\lt z\\lt 3. We use our deep near-ultraviolet imaging from WFC3/UVIS on the Hubble Space Telescope and existing Advanced Camera for Surveys (ACS)/WFC and WFC3/IR imaging of three lensing galaxy clusters, Abell 2744 and MACS J0717 from the Hubble Frontier Field survey and Abell 1689. Combining deep UV imaging and high magnification from strong gravitational lensing, we use photometric redshifts to identify 780 ultra-faint galaxies with {M}{UV}\\lt -12.5 AB mag at 1\\lt z\\lt 3. From these samples, we identified five new, faint, multiply imaged systems in A1689. We run a Monte Carlo simulation to estimate the completeness correction and effective volume for each cluster using the latest published lensing models. We compute the rest-frame UV LF and find the best-fit faint-end slopes of α =-1.56+/- 0.04, α =-1.72+/- 0.04, and α =-1.94+/- 0.06 at 1.0\\lt z\\lt 1.6, 1.6\\lt z\\lt 2.2, and 2.2\\lt z\\lt 3.0, respectively. Our results demonstrate that the UV LF becomes steeper from z˜ 1.3 to z˜ 2.6 with no sign of a turnover down to {M}{UV}=-14 AB mag. We further derive the UV LFs using the Lyman break “dropout” selection and confirm the robustness of our conclusions against different selection methodologies. Because the sample sizes are so large and extend to such faint luminosities, the statistical uncertainties are quite small, and systematic uncertainties (due to the assumed size distribution, for example) likely dominate. If we restrict our analysis to galaxies and volumes above \\gt 50 % completeness in order to minimize these systematics, we still find that the faint-end slope is steep and getting steeper with redshift, though with slightly shallower (less negative) values (α =-1.55+/- 0.06, -1.69 ± 0.07, and -1.79 ± 0.08 for z˜ 1.3, 1.9, and 2.6, respectively). Finally, we conclude that the faint star-forming galaxies with UV magnitudes of -18.5\\lt {M}{UV}\\lt -12.5 covered in this study produce the majority (55%-60%) of the unobscured UV luminosity density at 1\\lt z\\lt 3. Some of the data presented herein were obtained at the W.M. Keck Observatory, which is operated as a scientific partnership among the California Institute of Technology, the University of California, and the National Aeronautics and Space Administration. The Observatory was made possible by the generous financial support of the W.M. Keck Foundation.

Improved mask-based CD uniformity for gridded-design-rule lithography

NASA Astrophysics Data System (ADS)

Faivishevsky, Lev; Khristo, Sergey; Sagiv, Amir; Mangan, Shmoolik

2009-03-01

The difficulties encountered during lithography of state-of-the-art 2D patterns are formidable, and originate from the fact that deep sub-wavelength features are being printed. This results in a practical limit of k1 >=0.4 as well as a multitude of complex restrictive design rules, in order to mitigate or minimize lithographic hot spots. An alternative approach, that is gradually attracting the lithographic community's attention, restricts the design of critical layers to straight, dense lines (a 1D grid), that can be relatively easily printed using current lithographic technology. This is then followed by subsequent, less critical trimming stages to obtain circuit functionality. Thus, the 1D gridded approach allows hotspot-free, proximity-effect free lithography of ultra low- k1 features. These advantages must be supported by a stable CD control mechanism. One of the overriding parameters impacting CDU performance is photo mask quality. Previous publications have demonstrated that IntenCDTM - a novel, mask-based CDU mapping technology running on Applied Materials' Aera2TM aerial imaging mask inspection tool - is ideally fit for detecting mask-based CDU issues in 1D (L&S) patterned masks for memory production. Owing to the aerial nature of image formation, IntenCD directly probes the CD as it is printed on the wafer. In this paper we suggest that IntenCD is naturally fit for detecting mask-based CDU issues in 1D GDR masks. We then study a novel method of recovering and quantifying the physical source of printed CDU, using a novel implementation of the IntenCD technology. We demonstrate that additional, simple measurements, which can be readily performed on board the Aera2TM platform with minimal throughput penalty, may complement IntenCD and allow a robust estimation of the specific nature and strength of mask error source, such as pattern width variation or phase variation, which leads to CDU issues on the printed wafer. We finally discuss the roles played by IntenCD in advanced GDR mask production, starting with tight control over mask production process, continuing to mask qualification at mask shop and ending at in-line wafer CDU correction in fabs.

UV-Fluorescent Sensing for Primary Selection of Metal-rich Seafloor Massive Sulfide Ore

NASA Astrophysics Data System (ADS)

Yamazaki, T.; Nakatani, T.; Nakatani, N.; Arai, R.

2012-12-01

Seafloor massive sulfides (SMS) in the western Pacific have received much attention as resources for Au, Ag, Cu, Zn, and Pb. Because of the higher metal contents, the venture commercial mining project may start in 2013 in the East Manus Basin, Papua New Guinea. One of important problems to be solved is reducing the waste rock disposal costs for the economy. The best location for the reducing is on seafloor just after the excavation of SMS ores. The authors select UV-fluorescent sensing for primary selection of the ores, because no additional environmental impact is created with the application of the method. First of all, the effectiveness of the UV-fluorescent sensing by a combination system with a UV-light and a camera (See attached figure) in deep water condition is clarified. Then many UV-fluorescent data of SMS ore, SMS accompanied rock, and seafloor rock samples are collected. In the analyses phase, the ore and rock samples are classified into some groups by applying the cluster analysis to the metal contents at first. Then, using the UV fluorescent color brightness and contrasts of the ore and rock samples, the discriminant analysis based on Mahalanobis distance is applied. The higher possibility to identify the SMS ores containing valuable metals from camera image is suggested from the analyses. When additional UV-fluorescent and chemical assay data are obtained, the renewal of discriminant analysis is necessary. Therefore, the results and conclusions described in this study are tentative ones.; UV-fluorescent sensing

ILT for double exposure lithography with conventional and novel materials

NASA Astrophysics Data System (ADS)

Poonawala, Amyn; Borodovsky, Yan; Milanfar, Peyman

2007-03-01

Multiple paths exists to provide lithography solutions pursuant to Moore's Law for next 3-5 generations of technology, yet each of those paths inevitably leads to solutions eventually requiring patterning at k I < 0.30 and below. In this article, we explore double exposure single development lithography for k I >= 0.25 (using conventional resist) and k1 < 0.25 (using new out-of-sight out-of-mind materials). For the case of k I >= 0.25, we propose a novel double exposure inverse lithography technique (ILT) to split the pattern. Our algorithm is based on our earlier proposed single exposure ILT framework, and works by decomposing the aerial image (instead of the target pattern) into two parts. It also resolves the phase conflicts automatically as part of the decomposition, and the combined aerial image obtained using the estimated masks has a superior contrast. For the case of k I < 0.25, we focus on analyzing the use of various dual patterning techniques enabled by the use of hypothetic materials with properties that allow for the violation of the linear superposition of intensities from the two exposures. We investigate the possible use of two materials: contrast enhancement layer (CEL) and two-photon absorption resists. We propose a mathematical model for CEL, define its characteristic properties, and derive fundamental bounds on the improvement in image log-slope. Simulation results demonstrate that double exposure single development lithography using CEL enables printing 80nm gratings using dry lithography. We also combine ILT, CEL, and DEL to synthesize 2-D patterns with k I = 0.185. Finally, we discuss the viability of two-photon absorption resists for double exposure lithography.

Multi-shaped beam: development status and update on lithography results

NASA Astrophysics Data System (ADS)

Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

2011-04-01

According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask specifications and complexity have increased more quickly than the half-pitch requirements on the wafer designated by the roadmap due to advanced optical proximity correction and double patterning demands. From the economical perspective mask costs have significantly increased each generation, in which mask writing represents a major portion. The availability of a multi-electron-beam lithography system for mask write application is considered a potential solution to overcome these challenges [2, 3]. In this paper an update of the development status of a full-package high-throughput multi electron-beam writer, called Multi Shaped Beam (MSB), will be presented. Lithography performance results, which are most relevant for mask writing applications, will be disclosed. The MSB technology is an evolutionary development of the matured single Variable Shaped Beam (VSB) technology. An arrangement of Multi Deflection Arrays (MDA) allows operation with multiple shaped beams of variable size, which can be deflected and controlled individually [4]. This evolutionary MSB approach is associated with a lower level of risk and a relatively short time to implementation compared to the known revolutionary concepts [3, 5, 6]. Lithography performance is demonstrated through exposed pattern. Further details of the substrate positioning platform performance will be disclosed. It will become apparent that the MSB operational mode enables lithography on the same and higher performance level compared to single VSB and that there are no specific additional lithography challenges existing beside those which have already been addressed [1].

Mix & match electron beam & scanning probe lithography for high throughput sub-10 nm lithography

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Hofer, Manuel; Rangelow, Ivo W.

2013-03-01

The prosperous demonstration of a technique able to produce features with single nanometer (SN) resolution could guide the semiconductor industry into the desired beyond CMOS era. In the lithographic community immense efforts are being made to develop extreme ultra-violet lithography (EUVL) and multiple-e-beam direct-write systems as possible successor for next generation lithography (NGL). However, patterning below 20 nm resolution and sub-10 nm overlay alignment accuracy becomes an extremely challenging quest. Herein, the combination of electron beam lithography (EBL) or EUVL with the outstanding capabilities of closed-loop scanning proximal probe nanolithography (SPL) reveals a promising way to improve both patterning resolution and reproducibility in combination with excellent overlay and placement accuracy. In particular, the imaging and lithographic resolution capabilities provided by scanning probe microscopy (SPM) methods touches the atomic level, which expresses the theoretical limit of constructing nanoelectronic devices. Furthermore, the symbiosis between EBL (EUVL) and SPL expands the process window of EBL (EUVL) far beyond state-of-the-art allowing SPL-based pre- and post-patterning of EBL (EUVL) written features at critical dimension level with theoretically nanometer precise pattern overlay alignment. Moreover, we can modify the EBL (EUVL) pattern before as well as after the development step. In this paper we demonstrate proof of concept using the ultra-high resolution molecular glass resist calixarene. Therefor we applied Gaussian E-beam lithography system operating at 10 keV and a home-developed SPL set-up. The introduced Mix and Match lithography strategy enables a powerful use of our SPL set-up especially as post-patterning tool for inspection and repair functions below the sub-10 nm critical dimension level.

Colloidal lithography nanostructured Pd/PdO x core-shell sensor for ppb level H2S detection.

PubMed

Benedict, Samatha; Lumdee, Chatdanai; Dmitriev, Alexandre; Anand, Srinivasan; Bhat, Navakanta

2018-06-22

In this work we report on plasma oxidation of palladium (Pd) to form reliable palladium/palladium oxide (Pd/PdO x ) core-shell sensor for ppb level H 2 S detection and its performance improvement through nanostructuring using hole-mask colloidal lithography (HCL). The plasma oxidation parameters and the sensor operating conditions are optimized to arrive at a sensor device with high sensitivity and repeatable response for H 2 S. The plasma oxidized palladium/palladium oxide sensor shows a response of 43.1% at 3 ppm H 2 S at the optimum operating temperature of 200 °C with response and recovery times of 24 s and 155 s, respectively. The limit of detection (LoD) of the plasma oxidised beam is 10 ppb. We further integrate HCL, a bottom-up and cost-effective process, to create nanodiscs of fixed diameter of 100 nm and varying heights (10, 15 and 20 nm) on 10 nm thin Pd beam which is subsequently plasma oxidized to improve the H 2 S sensing characteristics. The nanostructured Pd/PdO x sensor with nanodiscs of 100 nm diameter and 10 nm height shows an enhancement in sensing performance by 11.8% at same operating temperature and gas concentration. This nanostructured sensor also shows faster response and recovery times (15 s and 100 s, respectively) compared to the unstructured Pd/PdO x counterpart together with an experimental LoD of 10 ppb and the estimated limit going all the way down to 2 ppb. Material characterization of the fabricated Pd/PdO x sensors is done using UV-vis spectroscopy and x-ray photoemission spectroscopy.

Ion beam lithography system

DOEpatents

Leung, Ka-Ngo

2005-08-02

A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

Optical force stamping lithography

PubMed Central

Nedev, Spas; Urban, Alexander S.; Lutich, Andrey A.; Feldmann, Jochen

2013-01-01

Here we introduce a new paradigm of far-field optical lithography, optical force stamping lithography. The approach employs optical forces exerted by a spatially modulated light field on colloidal nanoparticles to rapidly stamp large arbitrary patterns comprised of single nanoparticles onto a substrate with a single-nanoparticle positioning accuracy well beyond the diffraction limit. Because the process is all-optical, the stamping pattern can be changed almost instantly and there is no constraint on the type of nanoparticle or substrates used. PMID:21992538

LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

NASA Astrophysics Data System (ADS)

Cantu, Pietro; Baldi, Livio; Piacentini, Paolo; Sytsma, Joost; Le Gratiet, Bertrand; Gaugiran, Stéphanie; Wong, Patrick; Miyashita, Hiroyuki; Atzei, Luisa R.; Buch, Xavier; Verkleij, Dick; Toublan, Olivier; Perez-Murano, Francesco; Mecerreyes, David

2010-04-01

In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twelve companies from five different European Countries (Italy, Netherlands, France, Belgium Spain; includes: IC makers (Numonyx and STMicroelectronics), a group of equipment and materials companies (ASML, Lam Research srl, JSR, FEI), a mask maker (Dai Nippon Photomask Europe), an EDA company (Mentor Graphics) and four research and development institutes (CEA-Leti, IMEC, Centro Nacional de Microelectrónica, CIDETEC). The LENS project aims to develop and integrate the overall infrastructure required to reach patterning resolutions required by 32nm and 22nm technology nodes through the double patterning and pitch doubling technologies on existing conventional immersion exposure tools, with the purpose to allow the timely development of 32nm and 22nm technology nodes for memories and logic devices, providing a safe alternative to EUV, Higher Refraction Index Fluids Immersion Lithography and maskless lithography, which appear to be still far from maturity. The project will cover the whole lithography supply chain including design, masks, materials, exposure tools, process integration, metrology and its final objective is the demonstration of 22nm node patterning on available 1.35 NA immersion tools on high complexity mask set.

Electron beam mask writer EBM-9500 for logic 7nm node generation

NASA Astrophysics Data System (ADS)

Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

2016-10-01

Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

Full-chip level MEEF analysis using model based lithography verification

NASA Astrophysics Data System (ADS)

Kim, Juhwan; Wang, Lantian; Zhang, Daniel; Tang, Zongwu

2005-11-01

MEEF (Mask Error Enhancement Factor) has become a critical factor in CD uniformity control since optical lithography process moved to sub-resolution era. A lot of studies have been done by quantifying the impact of the mask CD (Critical Dimension) errors on the wafer CD errors1-2. However, the benefits from those studies were restricted only to small pattern areas of the full-chip data due to long simulation time. As fast turn around time can be achieved for the complicated verifications on very large data by linearly scalable distributed processing technology, model-based lithography verification becomes feasible for various types of applications such as post mask synthesis data sign off for mask tape out in production and lithography process development with full-chip data3,4,5. In this study, we introduced two useful methodologies for the full-chip level verification of mask error impact on wafer lithography patterning process. One methodology is to check MEEF distribution in addition to CD distribution through process window, which can be used for RET/OPC optimization at R&D stage. The other is to check mask error sensitivity on potential pinch and bridge hotspots through lithography process variation, where the outputs can be passed on to Mask CD metrology to add CD measurements on those hotspot locations. Two different OPC data were compared using the two methodologies in this study.

The partial coherence modulation transfer function in testing lithography lens

NASA Astrophysics Data System (ADS)

Huang, Jiun-Woei

2018-03-01

Due to the lithography demanding high performance in projection of semiconductor mask to wafer, the lens has to be almost free in spherical and coma aberration, thus, in situ optical testing for diagnosis of lens performance has to be established to verify the performance and to provide the suggesting for further improvement of the lens, before the lens has been build and integrated with light source. The measurement of modulation transfer function of critical dimension (CD) is main performance parameter to evaluate the line width of semiconductor platform fabricating ability for the smallest line width of producing tiny integrated circuits. Although the modulation transfer function (MTF) has been popularly used to evaluation the optical system, but in lithography, the contrast of each line-pair is in one dimension or two dimensions, analytically, while the lens stand along in the test bench integrated with the light source coherent or near coherent for the small dimension near the optical diffraction limit, the MTF is not only contributed by the lens, also by illumination of platform. In the study, the partial coherence modulation transfer function (PCMTF) for testing a lithography lens is suggested by measuring MTF in the high spatial frequency of in situ lithography lens, blended with the illumination of partial and in coherent light source. PCMTF can be one of measurement to evaluate the imperfect lens of lithography lens for further improvement in lens performance.

Different susceptibility of cells of porcine skin and internal organs to ultraviolet A-induced breaking of nuclear DNA.

PubMed

Brozyna, Anna; Chwirot, Barbara W

2005-01-01

There is a continuously growing interest in medical applications of ultraviolet radiation (UV-A and long-wavelength UV-B) especially for laser surgery, phototherapy and photodiagnostics of human internal organs. UV-B and UV-A radiation is potentially mutagenic, however, there has been very little information published to date concerning the significance of possible deleterious action of such photons on cells of internal tissues. The aim of this study is to compare the sensitivities of skin cells to those of internal organs upon exposure to UV-A. To assess this sensitivity we have determined the UV-A dose-dependent frequency of nuclear DNA breaks detected with the terminal deoxynucleotidyl transferase-mediated deoxyuridine triphosphate-biotin nick end-labeling (TUNEL) technique. The materials for the study were macroscopic samples of porcine skin, colon and esophagus. The UV-A dose ranged from 0.1 to 1000 mJ/cm2, which is similar to doses received by cells in regions examined with laser-induced fluorescence or by cells surrounding areas subject to a laser ablation. To reduce the influence of DNA repair processes the tissue samples were kept at a low temperature during the irradiation and were deep frozen immediately after completing the irradiation procedure. The cells of the internal organs are much more susceptible to UV-A-induced breaking of DNA than the skin cells. The percentage fractions and the spatial distributions of the damaged cells and the characteristics of the UV-A dose dependence seem to vary by type of internal organ.

Survival of thermophilic and hyperthermophilic microorganisms after exposure to UV-C, ionizing radiation and desiccation.

PubMed

Beblo, Kristina; Douki, Thierry; Schmalz, Gottfried; Rachel, Reinhard; Wirth, Reinhard; Huber, Harald; Reitz, Günther; Rettberg, Petra

2011-11-01

In this study, we investigated the ability of several (hyper-) thermophilic Archaea and phylogenetically deep-branching thermophilic Bacteria to survive high fluences of monochromatic UV-C (254 nm) and high doses of ionizing radiation, respectively. Nine out of fourteen tested microorganisms showed a surprisingly high tolerance against ionizing radiation, and two species (Aquifex pyrophilus and Ignicoccus hospitalis) were even able to survive 20 kGy. Therefore, these species had a comparable survivability after exposure to ionizing radiation such as Deinococcus radiodurans. In contrast, there was nearly no difference in survival of the tested strains after exposure to UV-C under anoxic conditions. If the cells had been dried in advance of UV-C irradiation, they were more sensitive to UV-C radiation compared with cells irradiated in liquid suspension; this effect could be reversed by the addition of protective material like sulfidic ores before irradiation. By exposure to UV-C, photoproducts were formed in the DNA of irradiated Archaea and Bacteria. The distribution of the main photoproducts was species specific, but the amount of the photoproducts was only partly dependent on the applied fluence. Overall, our results show that tolerance to radiation seems to be a common phenomenon among thermophilic and hyperthermophilic microorganisms.

Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro

2015-09-01

Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

Pushing the plasmonic imaging nanolithography to nano-manufacturing

NASA Astrophysics Data System (ADS)

Gao, Ping; Li, Xiong; Zhao, Zeyu; Ma, Xiaoliang; Pu, Mingbo; Wang, Changtao; Luo, Xiangang

2017-12-01

Suffering from the so-called diffraction limit, the minimum resolution of conventional photolithography is limited to λ / 2 or λ / 4, where λ is the incident wavelength. The physical mechanism of this limit lies at the fact that the evanescent waves that carry subwavelength information of the object decay exponentially in a medium, and cannot reach the image plane. Surface plasmons (SPs) are non-radiative electromagnetic waves that propagate along the interface between metal and dielectric, which exhibits unique sub-diffraction optical characteristics. In recent years, benefiting from SPs' features, researchers have proposed a variety of plasmonic lithography methods in the manner of interference, imaging and direct writing, and have demonstrated that sub-diffraction resolution could be achieved by theoretical simulations or experiments. Among the various plasmonic lithography modes, plasmonic imaging lithography seems to be of particular importance for applications due to its compatibility with conventional lithography. Recent results show that the half pitch of nanograting can be shrinked down to 22 nm and even 16 nm. This paper will give an overview of research progress, representative achievements of plasmonic imaging lithography, the remained problems and outlook of further developments.

The UV Luminosity Function at 6 < z < 10 from the Hubble Frontier Fields

NASA Astrophysics Data System (ADS)

Livermore, Rachael C.; Finkelstein, Steven L.; Lotz, Jennifer M.

2017-01-01

The Hubble Frontier Fields program has obtained deep optical and near-infrared Hubble Space Telescope imaging of six galaxy clusters and associated parallel fields. The depth of the imaging (m_AB ~ 29) means we can identify faint galaxies at z > 6, and those in the cluster fields also benefit from magnification due to strong gravitational lensing that allows us to reach intrinsic absolute magnitudes of M_UV ~ -12.5 at z ~ 6. Here, we present the UV luminosity functions at 6 < z < 10 from the complete Hubble Frontier Fields data, revealing a steep faint-end slope that extends to the limits of the data. The lack of any apparent turnover in the luminosity functions means that faint galaxies in the early Universe may have provided sufficient ionizing radiation to sustain reionization.

Differential evolution of the UV luminosity function of Lyman break galaxies from z ~ 5 to 3

NASA Astrophysics Data System (ADS)

Iwata, I.; Ohta, K.; Tamura, N.; Akiyama, M.; Aoki, K.; Ando, M.; Kiuchi, G.; Sawicki, M.

2007-04-01

We report the ultraviolet luminosity function (UVLF) of Lyman break galaxies at z ~ 5 derived from a deep and wide survey using the prime focus camera of the 8.2 m Subaru telescope (Suprime-Cam). Target fields consist of two blank regions of the sky, namely, the region including the Hubble Deep Field-North and the J0053+1234 region, and the total effective surveyed area is 1290 arcmin2. Applications of carefully determined colour selection criteria in V - Ic and Ic - z' yield a detection of 853 z ~ 5 candidates with z'AB < 26.5 mag. The UVLF at z ~ 5 based on this sample shows no significant change in the number density of bright (L >~ L*z=3) LBGs from that at z ~ 3, while there is a significant decline in the LF's faint end with increasing look-back time. This result means that the evolution of the number densities is differential with UV luminosity: the number density of UV luminous objects remains almost constant from z ~ 5 to 3 (the cosmic age is about 1.2 to 2.1 Gyr) while the number density of fainter objects gradually increases with cosmic time. This trend becomes apparent thanks to the small uncertainties in number densities both in the bright and faint parts of LFs at different epochs that are made possible by the deep and wide surveys we use. We discuss the origins of this differential evolution of the UVLF along the cosmic time and suggest that our observational findings are consistent with the biased galaxy evolution scenario: a galaxy population hosted by massive dark haloes starts active star formation preferentially at early cosmic time, while less massive galaxies increase their number density later. We also calculated the UV luminosity density by integrating the UVLF and at z ~ 5 found it to be 38.8+6.7-4.1 per cent of that at z ~ 3 for the luminosity range L > 0.1L*z=3. By combining our results with those from the literature, we find that the cosmic UV luminosity density marks its peak at and then slowly declines towards higher redshift. Based on data collected at Subaru Telescope and partly obtained from the SMOKA science archive at Astronomical Data Analysis Center, which are operated by the National Astronomical Observatory of Japan. E-mail: iwata@oao.nao.ac.jp (II)

MAGIC: a European program to push the insertion of maskless lithography

NASA Astrophysics Data System (ADS)

Pain, L.; Icard, B.; Tedesco, S.; Kampherbeek, B.; Gross, G.; Klein, C.; Loeschner, H.; Platzgummer, E.; Morgan, R.; Manakli, S.; Kretz, J.; Holhe, C.; Choi, K.-H.; Thrum, F.; Kassel, E.; Pilz, W.; Keil, K.; Butschke, J.; Irmscher, M.; Letzkus, F.; Hudek, P.; Paraskevopoulos, A.; Ramm, P.; Weber, J.

2008-03-01

With the willingness of the semiconductor industry to push manufacturing costs down, the mask less lithography solution represents a promising option to deal with the cost and complexity concerns about the optical lithography solution. Though a real interest, the development of multi beam tools still remains in laboratory environment. In the frame of the seventh European Framework Program (FP7), a new project, MAGIC, started January 1st 2008 with the objective to strengthen the development of the mask less technology. The aim of the program is to develop multi beam systems from MAPPER and IMS nanofabrication technologies and the associated infrastructure for the future tool usage. This paper draws the present status of multi beam lithography and details the content and the objectives of the MAGIC project.

Indus-2 X-ray lithography beamline for X-ray optics and material science applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhamgaye, V. P., E-mail: vishal@rrcat.gov.in; Lodha, G. S., E-mail: vishal@rrcat.gov.in

2014-04-24

X-ray lithography is an ideal technique by which high aspect ratio and high spatial resolution micro/nano structures are fabricated using X-rays from synchrotron radiation source. The technique has been used for fabricating optics (X-ray, visible and infrared), sensors and actuators, fluidics and photonics. A beamline for X-ray lithography is operational on Indus-2. The beamline offers wide lithographic window from 1-40keV photon energy and wide beam for producing microstructures in polymers upto size ∼100mm × 100mm. X-ray exposures are possible in air, vacuum and He gas environment. The air based exposures enables the X-ray irradiation of resist for lithography and alsomore » irradiation of biological and liquid samples.« less

Electron-beam lithography for micro and nano-optical applications

NASA Technical Reports Server (NTRS)

Wilson, Daniel W.; Muller, Richard E.; Echternach, Pierre M.

2005-01-01

Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

United States Air Force High School Apprenticeship Program. 1990 Program Management Report. Volume 3

DTIC Science & Technology

1991-04-18

User Guide Shelly Knupp 73 Computer-Aided Design (CAD) Area Christopher O’Dell 74 Electron Beam Lithography Suzette Yu 68 Flight Dynamics Laboratory 75...fabrication. I Mr. Ed Davis, for the background knowledge of device processes and I information on electron beam lithography . Captain Mike Cheney, for...researcher may write gates on to the wafer by a process called lithography . This is the most crucial and complex part of the process. Two types of proven