Concentration dependence of electrical resistivity of binary liquid alloy HgZn: Ab-initio study

NASA Astrophysics Data System (ADS)

Sharma, Nalini; Thakur, Anil; Ahluwalia, P. K.

2013-06-01

The electrical resistivity of HgZn liquid alloy has been made calculated using Troullier and Martins ab-initio pseudopotential as a function of concentration. Hard sphere diameters of Hg and Zn are obtained through the inter-ionic pair potential have been used to calculate partial structure factors. Considering the liquid alloy to be a ternary mixture Ziman's formula for calculating the resistivity of binary liquid alloys, modified for complex formation, has been used. These results suggest that ab-initio approach for calculating electrical resistivity is quite successful in explaining the electronic transport properties of binary Liquid alloys.

Methylammonium lead iodide grain boundaries exhibit depth-dependent electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacDonald, Gordon A.; Yang, Mengjin; Berweger, Samuel

In this paper, the nanoscale through-film and lateral photo-response and conductivity of large-grained methylammonium lead iodide (MAPbI 3) thin films are studied. In perovskite solar cells (PSC), these films result in efficiencies >17%. The grain boundaries (GBs) show high resistance at the top surface of the film, and act as an impediment to photocurrent collection. However, lower resistance pathways between grains exist below the top surface of the film, indicating that there exists a depth-dependent resistance of GBs (R GB(z)). Furthermore, lateral conductivity measurements indicate that R GB(z) exhibits GB-to-GB heterogeneity. These results indicate that increased photocurrent collection along GBsmore » is not a prerequisite for high-efficiency PSCs. Rather, better control of depth-dependent GB electrical properties, and an improvement in the homogeneity of the GB-to-GB electrical properties, must be managed to enable further improvements in PSC efficiency. Finally, these results refute the implicit assumption seen in the literature that the electrical properties of GBs, as measured at the top surface of the perovskite film, necessarily reflect the electrical properties of GBs within the thickness of the film.« less

Methylammonium lead iodide grain boundaries exhibit depth-dependent electrical properties

DOE PAGES

MacDonald, Gordon A.; Yang, Mengjin; Berweger, Samuel; ...

2016-09-23

In this paper, the nanoscale through-film and lateral photo-response and conductivity of large-grained methylammonium lead iodide (MAPbI 3) thin films are studied. In perovskite solar cells (PSC), these films result in efficiencies >17%. The grain boundaries (GBs) show high resistance at the top surface of the film, and act as an impediment to photocurrent collection. However, lower resistance pathways between grains exist below the top surface of the film, indicating that there exists a depth-dependent resistance of GBs (R GB(z)). Furthermore, lateral conductivity measurements indicate that R GB(z) exhibits GB-to-GB heterogeneity. These results indicate that increased photocurrent collection along GBsmore » is not a prerequisite for high-efficiency PSCs. Rather, better control of depth-dependent GB electrical properties, and an improvement in the homogeneity of the GB-to-GB electrical properties, must be managed to enable further improvements in PSC efficiency. Finally, these results refute the implicit assumption seen in the literature that the electrical properties of GBs, as measured at the top surface of the perovskite film, necessarily reflect the electrical properties of GBs within the thickness of the film.« less

Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance Under Different Operating Conditions

NASA Astrophysics Data System (ADS)

Siouane, Saima; Jovanović, Slaviša; Poure, Philippe

2017-01-01

The Seebeck effect is used in thermoelectric generators (TEGs) to supply electronic circuits by converting the waste thermal into electrical energy. This generated electrical power is directly proportional to the temperature difference between the TEG module's hot and cold sides. Depending on the applications, TEGs can be used either under constant temperature gradient between heat reservoirs or constant heat flow conditions. Moreover, the generated electrical power of a TEG depends not only on these operating conditions, but also on the contact thermal resistance. The influence of the contact thermal resistance on the generated electrical power have already been extensively reported in the literature. However, as reported in Park et al. (Energy Convers Manag 86:233, 2014) and Montecucco and Knox (IEEE Trans Power Electron 30:828, 2015), while designing TEG-powered circuit and systems, a TEG module is mostly modeled with a Thévenin equivalent circuit whose resistance is constant and voltage proportional to the temperature gradient applied to the TEG's terminals. This widely used simplified electrical TEG model is inaccurate and not suitable under constant heat flow conditions or when the contact thermal resistance is considered. Moreover, it does not provide realistic behaviour corresponding to the physical phenomena taking place in a TEG. Therefore, from the circuit designer's point of view, faithful and fully electrical TEG models under different operating conditions are needed. Such models are mainly necessary to design and evaluate the power conditioning electronic stages and the maximum power point tracking algorithms of a TEG power supply. In this study, these fully electrical models with the contact thermal resistance taken into account are presented and the analytical expressions of the Thévenin equivalent circuit parameters are provided.

Electrical resistivity in Zr48Nb8Cu12Fe8Be24 glassy and crystallized alloys

NASA Astrophysics Data System (ADS)

Bai, H. Y.; Tong, C. Z.; Zheng, P.

2004-02-01

The electrical resistivity of Zr48Nb8Cu12Fe8Be24 bulk metallic glassy and crystallized alloys in the temperature range of 4.2-293 K is investigated. It is found that the resistivity in glassy and crystallized states shows opposite temperature coefficients. For the metallic glass, the resistivity shows a negative logarithmic dependence at temperatures below 16 K, whereas it has more normal behavior for the crystallized alloy. At higher temperatures, the resistivity in both glassy and crystallized alloys shows dependence upon both T and T2, but the signs of the T and T2 terms are opposite. The results are interpreted in terms of scattering from two-level tunneling states in glasses and the generalized Ziman diffraction model.

Low temperature resistivity studies of SmB6: Observation of two-dimensional variable-range hopping conductivity

NASA Astrophysics Data System (ADS)

Batkova, Marianna; Batko, Ivan; Gabáni, Slavomír; Gažo, Emil; Konovalova, Elena; Filippov, Vladimir

2018-05-01

We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures below 3 K down to 70 mK. According to our findings, temperature dependence of the electrical conduction in a certain temperature interval above 70 mK can be decomposed into a temperature-independent term and a temperature-activated term that can be described by variable-range hopping formula for two-dimensional systems, exp [ -(T0 / T) 1 / 3 ]. Thus, our results indicate importance of hopping type of electrical transport in the near-surface region of SmB6.

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

NASA Astrophysics Data System (ADS)

Bakan, Gokhan; Adnane, Lhacene; Gokirmak, Ali; Silva, Helena

2012-09-01

Temperature-dependent electrical resistivity, ρ(T), and thermal conductivity, k(T), of nanocrystalline silicon microwires self-heated to melt are extracted by matching simulated current-voltage (I-V) characteristics to experimental I-V characteristics. Electrical resistivity is extracted from highly doped p-type wires on silicon dioxide in which the heat losses are predominantly to the substrate and the self-heating depends mainly on ρ(T) of the wires. The extracted ρ(T) decreases from 11.8 mΩ cm at room-temperature to 5.2 mΩ cm at 1690 K, in reasonable agreement with the values measured up to ˜650 K. Electrical resistivity and thermal conductivity are extracted from suspended highly doped n-type silicon wires in which the heat losses are predominantly through the wires. In this case, measured ρ(T) (decreasing from 20.5 mΩ cm at room temperature to 12 mΩ cm at 620 K) is used to extract ρ(T) at higher temperatures (decreasing to 1 mΩ cm at 1690 K) and k(T) (decreasing from 30 W m-1 K-1 at room temperature to 20 W m-1 K-1 at 1690 K). The method is tested by using the extracted parameters to model wires with different dimensions. The experimental and simulated I-V curves for these wires show good agreement up to high voltage and temperature levels. This technique allows extraction of the electrical resistivity and thermal conductivity up to very high temperatures from self-heated microstructures.

The effect of Au nanoparticles on the strain-dependent electrical properties of CVD graphene

NASA Astrophysics Data System (ADS)

Bai, Jing; Nan, Haiyan; Qi, Han; Bing, Dan; Du, Ruxia

2018-03-01

We conducted an experimental study of the effect of Au nanoparticles (NPs) on the strain-dependent electrical properties in chemical vapor deposition grown graphene. We used 5-nm thick Au NPs as an effective cover (and doping) layer for graphene, and found that Au NPs decrease electrical resistance by two orders of magnitude. In addition, the Au NPs suppress the effect of strain on resistance because the intrinsic topological cracks and grain boundaries in graphene are filled with Au nanoparticles. This method has a big potential to advance industrial production of large-area, high-quality electronic devices and graphene-based transparent electrodes.

Electrical Resistivity Measurement of Cu and Zn on the Pressure-Dependent Melting Boundary

NASA Astrophysics Data System (ADS)

Secco, R. A.; Ezenwa, I.; Yong, W.

2016-12-01

Understanding how the core cools through heat conduction and modelling the geodynamo requires knowledge of the thermal and electrical conductivity of solid and liquid Fe and its relevant alloys at high pressures. It has been proposed that electrical resistivity of a pure metal is constant along its P-dependent melting boundary (Stacey and Anderson, PEPI, 2001). If confirmed, this invariant behavior could serve as a practical tool for low P studies to assess electrical resistivity of Earth's core. Since Earth's inner core boundary (ICB) is a melting boundary of mainly Fe, measurements of electrical resistivity of Fe at the melting boundary, under any P, would serve as a proxy for the resistivity at the ICB. A revised treatment (Stacey and Loper, PEPI, 2007) accounted for s-d scattering in transition metals with unfilled d-bands and limited the proposal to metals with electrons of the same type in filled d-band metals. To test this proposal, we made high P, T measurements of electrical resistivity of d-band filled Cu and Zn in solid and liquid states. Experiments were carried out in a 1000 ton cubic anvil press up to 5 GPa and 300K above melting temperatures. Two thermocouples placed at opposite ends of the wire sample served as T probes as well as 4-wire resistance electrodes in a switched circuit. A polarity switch was used to remove any bias voltage measurement using thermocouple legs. Electron microprobe analyses were used to check the compositions of the recovered samples. The expected resistivity decrease with P and increase with T were found and comparisons with 1atm data are in very good agreement. Within the error of measurement, the resistivity values of Cu decrease along the melting boundary while Zn appears to support the hypothesis of constant resistivity along the melting boundary.

Exploring electrical resistance: a novel kinesthetic model helps to resolve some misconceptions

NASA Astrophysics Data System (ADS)

Cottle, Dan; Marshall, Rick

2016-09-01

A simple ‘hands on’ physical model is described which displays analogous behaviour to some aspects of the free electron theory of metals. Using it students can get a real feel for what is going on inside a metallic conductor. Ohms Law, the temperature dependence of resistivity, the dependence of resistance on geometry, how the conduction electrons respond to a potential difference and the concepts of mean free path and drift speed of the conduction electrons can all be explored. Some quantitative results obtained by using the model are compared with the predictions of Drude’s free electron theory of electrical conduction.

Note: extraction of temperature-dependent interfacial resistance of thermoelectric modules.

PubMed

Chen, Min

2011-11-01

This article discusses an approach for extracting the temperature dependency of the electrical interfacial resistance associated with thermoelectric devices. The method combines a traditional module-level test rig and a nonlinear numerical model of thermoelectricity to minimize measurement errors on the interfacial resistance. The extracted results represent useful data to investigating the characteristics of thermoelectric module resistance and comparing performance of various modules. © 2011 American Institute of Physics

Theoretical investigation on the magnetic and electric properties in TbSb compound through an anisotropic microscopic model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ranke, P. J. von, E-mail: von.ranke@uol.com.br; Ribeiro, P. O.; Alho, B. P.

2016-05-14

We report the strong correlations between the magnetoresistivity and the magnetic entropy change in the cubic antiferromagnetic TbSb compound. The theoretical investigation was performed through a microscopic model which takes into account the crystalline electrical field anisotropy, exchange coupling interactions between the up and down magnetic sublattices, and the Zeeman interaction. The easy magnetization directions changes from 〈001〉 to 〈110〉 and then to 〈111〉 observed experimentally was successfully theoretically described. Also, the calculation of the temperature dependence of electric resistivity showed good agreement with the experimental data. Theoretical predictions were calculated for the temperature dependence of the magnetic entropy andmore » resistivity changes upon magnetic field variation. Besides, the difference in the spin up and down sublattices resistivity was investigated.« less

Temperature Dependence of Electrical Resistance of Woven Melt-Infiltrated SiCf/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Appleby, Matthew P.; Morscher, Gregory N.; Zhu, Dongming

2016-01-01

Recent studies have successfully shown the use of electrical resistance (ER)measurements to monitor room temperature damage accumulation in SiC fiber reinforced SiC matrix composites (SiCf/SiC) Ceramic Matrix Composites (CMCs). In order to determine the feasibility of resistance monitoring at elevated temperatures, the present work investigates the temperature dependent electrical response of various MI (Melt Infiltrated)-CVI (Chemical Vapor Infiltrated) SiC/SiC composites containing Hi-Nicalon Type S, Tyranno ZMI and SA reinforcing fibers. Test were conducted using a commercially available isothermal testing apparatus as well as a novel, laser-based heating approach developed to more accurately simulate thermomechanical testing of CMCs. Secondly, a post-test inspection technique is demonstrated to show the effect of high-temperature exposure on electrical properties. Analysis was performed to determine the respective contribution of the fiber and matrix to the overall composite conductivity at elevated temperatures. It was concluded that because the silicon-rich matrix material dominates the electrical response at high temperature, ER monitoring would continue to be a feasible method for monitoring stress dependent matrix cracking of melt-infiltrated SiC/SiC composites under high temperature mechanical testing conditions. Finally, the effect of thermal gradients generated during localized heating of tensile coupons on overall electrical response of the composite is determined.

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE PAGES

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John; ...

2016-10-03

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

A study of electron and thermal transport in layered titanium disulphide single crystals

NASA Astrophysics Data System (ADS)

Suri, Dhavala; Siva, Vantari; Joshi, Shalikram; Senapati, Kartik; Sahoo, P. K.; Varma, Shikha; Patel, R. S.

2017-12-01

We present a detailed study of thermal and electrical transport behavior of single crystal titanium disulphide flakes, which belong to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85-285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T 2 dependence of resistivity in the range of 42-300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T 2 to T 5 beyond 200 K. Interestingly, Au ion-irradiated TiS2 samples showed a similar T 5 dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro-Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS2 crystals.

Characterisation of electrical resistance for CMC Materials up to 1200 °C

NASA Astrophysics Data System (ADS)

Stäbler, T.; Böhrk, H.; Voggenreiter, H.

2017-12-01

Damage to thermal protection systems (TPS) during atmospheric re-entry is a severe safety issue, especially when considering re-usability of space transportation systems. There is a need for structural health monitoring systems and non-destructive inspection methods. However, damages are hard to detect. When ceramic matrix composites, in this case carbon fibre reinforced silicon carbide (C/C-SiC), are used as a TPS, the electrical properties of the present semiconductor material can be used for health monitoring, since the resistivity changes with damage, strain and temperature. In this work the electrical resistivity as a function of the material temperature is analysed eliminating effects of thermal electricity and the thermal coefficient of electrical resistance is determined. A sensor network is applied for locally and time resolved monitoring of the 300 mm x 120 mm x 3 mm panel shaped samples. Since the material is used for atmospheric re-entry it needs to be characterised for a wide range of temperatures, in this case as high as 1200 °C. Therefore, experiments in an inductively heated test bench were conducted. Firstly, a reference sample was used with thermocouples for characterising the temperature distribution across the sample surface. Secondly, electrical resistance under heat load was measured, time and spatially resolved. Results will be shown and discussed in terms of resistance dependence on temperature, thermal coefficient of electrical resistance, thermal electricity and electrical path orientation including an analysis on effective conducting cross section. Conversely, the thermal coefficient can also be used to determine the material temperature as a function of electrical resistance.

Structural, optical and high pressure electrical resistivity studies of pure NiO and Cu-doped NiO nanoparticles

NASA Astrophysics Data System (ADS)

Marselin, M. Abila; Jaya, N. Victor

2016-04-01

In this paper, pure NiO and Cu-doped NiO nanoparticles are prepared by co-precipitation method. The electrical resistivity measurements by applying high pressure on pure NiO and Cu-doped NiO nanoparticles were reported. The Bridgman anvil set up is used to measure high pressures up to 8 GPa. These measurements show that there is no phase transformation in the samples till the high pressure is reached. The samples show a rapid decrease in electrical resistivity up to 5 GPa and it remains constant beyond 5 GPa. The electrical resistivity and the transport activation energy of the samples under high pressure up to 8 GPa have been studied in the temperature range of 273-433 K using diamond anvil cell. The temperature versus electrical resistivity studies reveal that the samples behave like a semiconductor. The activation energies of the charge carriers depend on the size of the samples.

The effect of mechanical stress on electric resistance of nanographite-epoxy composites

NASA Astrophysics Data System (ADS)

Vovchenko, L.; Lazarenko, A.; Matzui, L.; Zhuravkov, A.

2012-03-01

The in-plane electric resistance Ra of composite materials (CMs) thermoexfoliated graphite(TEG)-epoxy resin(ED) under compression along compacting C-axis has been investigated by four-probe method. TEG content was 5-75 wt%. It was shown that specimens prepared by cold pressing are denser and reveal lower values of electric resistivity in comparison with specimens prepared by pouring. It was found that compression of the specimens leads to plastic deformation of specimens (εpl) and essential irreversible decrease of electric resistance during the first cycle of loading (up to 50 MPa), especially for the poured specimens with low density. Within the proposed model the contact resistance Rk between graphite particles in CM has been evaluated and it was shown that it increased with the decrease in TEG content in CM and depends on compacting method of CMs and the dispersity of graphite filler.

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

NASA Astrophysics Data System (ADS)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-12-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

Electrical resistivity of substitutionally disordered hcp Fe-Si and Fe-Ni alloys: Chemically-induced resistivity saturation in the Earth's core

NASA Astrophysics Data System (ADS)

Gomi, Hitoshi; Hirose, Kei; Akai, Hisazumi; Fei, Yingwei

2016-10-01

The thermal conductivity of the Earth's core can be estimated from its electrical resistivity via the Wiedemann-Franz law. However, previously reported resistivity values are rather scattered, mainly due to the lack of knowledge with regard to resistivity saturation (violations of the Bloch-Grüneisen law and the Matthiessen's rule). Here we conducted high-pressure experiments and first-principles calculations in order to clarify the relationship between the resistivity saturation and the impurity resistivity of substitutional silicon in hexagonal-close-packed (hcp) iron. We measured the electrical resistivity of Fe-Si alloys (iron with 1, 2, 4, 6.5, and 9 wt.% silicon) using four-terminal method in a diamond-anvil cell up to 90 GPa at 300 K. We also computed the electronic band structure of substitutionally disordered hcp Fe-Si and Fe-Ni alloy systems by means of Korringa-Kohn-Rostoker method with coherent potential approximation (KKR-CPA). The electrical resistivity was then calculated from the Kubo-Greenwood formula. These experimental and theoretical results show excellent agreement with each other, and the first principles results show the saturation behavior at high silicon concentration. We further calculated the resistivity of Fe-Ni-Si ternary alloys and found the violation of the Matthiessen's rule as a consequence of the resistivity saturation. Such resistivity saturation has important implications for core dynamics. The saturation effect places the upper limit of the resistivity, resulting in that the total resistivity value has almost no temperature dependence. As a consequence, the core thermal conductivity has a lower bound and exhibits a linear temperature dependence. We predict the electrical resistivity at the top of the Earth's core to be 1.12 ×10-6 Ωm, which corresponds to the thermal conductivity of 87.1 W/m/K. Such high thermal conductivity suggests high isentropic heat flow, leading to young inner core age (<0.85 Gyr old) and high initial core temperature. It also strongly suppresses thermal convection in the core, which results in no convective motion in inner core and possibly thermally stratified layer in the outer core.

Electrical resistivity of V-Cr-Ti alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zinkle, S.J.; Gubbi, A.N.; Eatherly, W.S.

1997-04-01

Room temperature electrical resistivity measurements have been performed on vanadium alloys containing 3-6%Cr and 3-6%Ti in order to evaluate the microstructural stability of these alloys. A nonlinear dependence on Cr and Ti concentration was observed, which suggests that either short range ordering or solute precipitation (perhaps in concert with interstitial solute clustering) has occurred in V-6Cr-6Ti.

Improvement of calculation method for electrical parameters of short network of ore-thermal furnaces

NASA Astrophysics Data System (ADS)

Aliferov, A. I.; Bikeev, R. A.; Goreva, L. P.

2017-10-01

The paper describes a new calculation method for active and inductive resistance of split interleaved current leads packages in ore-thermal electric furnaces. The method is developed on basis of regression analysis of dependencies of active and inductive resistances of the packages on their geometrical parameters, mutual disposition and interleaving pattern. These multi-parametric calculations have been performed with ANSYS software. The proposed method allows solving split current lead electrical parameters minimization and balancing problems for ore-thermal furnaces.

Temperature dependence of the electrical resistivity of LaxLu1-xAs

NASA Astrophysics Data System (ADS)

Rahimi, S.; Krivoy, E. M.; Lee, J.; Michael, M. E.; Bank, S. R.; Akinwande, D.

2013-08-01

We investigate the temperature-dependent resistivity of single-crystalline films of LaxLu1-xAs over the 5-300 K range. The resistivity was separated into lattice, carrier and impurity scattering regions. The effect of impurity scattering is significant below 20 K, while carrier scattering dominates at 20-80 K and lattice scattering dominates above 80 K. All scattering regions show strong dependence on the La content of the films. While the resistivity of 600 nm LuAs films agree well with the reported bulk resistivity values, 3 nm films possessed significantly higher resistivity, suggesting that interfacial roughness significantly impacts the scattering of carriers at the nanoscale limit.

Electrical resistivity across the tricriticality in itinerant ferromagnet

NASA Astrophysics Data System (ADS)

Opletal, P.; Prokleška, J.; Valenta, J.; Sechovský, V.

2018-05-01

We investigate the discontinuous ferromagnetic phase diagram near tricritical point in UCo1-xRuxAl compounds by electrical resistivity measurements. Separation of phases in UCo0.995Ru0.005Al at ambient pressure and in UCo0.990Ru0.010Al at pressure of 0.2 GPa and disappearance of ferromagnetism at 0.4 GPa is confirmed. The exponent of temperature dependence of electrical resistivity implies change from Fermi liquid-like behavior to non-Fermi liquid at 0.2 GPa and reaches minimum at 0.4 GPa. Our results are compared to results obtained on the pure UCoAl and explanation for different exponents is given.

Simple theory for the dependence of the electrical resistance of the magnetic superconductors TmRh/sub 4/B/sub 4/ and ErRh/sub 4/B/sub 4/ on temperature and field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meijer, H.C.; Andriessen, J.; Postma, H.

1986-04-01

A phenomenological description for the temperature and magnetic field dependence of the electrical resistance R of polycrystalline samples of the reentrant superconductors TmRh/sub 4/B/sub 4/ and ErRh/sub 4/B/sub 4/ is given on the basis of two assumptions: (1) Due to the anisotropic values of the rare-earth ions the critical field of the crystallites depends on the direction of the externally applied field, which leads to an increasing number of normal crystallites with increasing field. For the dependence of the magnetization M on temperature, a molecular field model is used. (2) The bulk resistance R of the sample depends in amore » linear way on the fraction of normal crystallites. There is a qualitative agreement with the experimental results of Hamaker et al. and of Ott et al. It is also shown that an applied field H/sub e/ is equal to the orbital critical field H(/sub c//sub 2/ for the temperature at which R(H/sub e/, T) starts deviating from the resistance of the normal sample.« less

Charge dependence of the plasma travel length in atmospheric-pressure plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yambe, Kiyoyuki; Konda, Kohmei; Masuda, Seiya

Plasma plume is generated using a quartz tube, helium gas, and foil electrode by applying AC high voltage under the atmosphere. The plasma plume is released into the atmosphere from inside of the quartz tube and is seen as the continuous movement of the plasma bullet. The travel length of plasma bullet is defined from plasma energy and force due to electric field. The drift velocity of plasma bullet has the upper limit under atmospheric-pressure because the drift velocity is determined from the balance between electric field and resistive force due to collisions between plasma and air. The plasma plumemore » charge depends on the drift velocity. Consequently, in the laminar flow of helium gas flow state, the travel length of the plasma plume logarithmically depends on the plasma plume charge which changes with both the electric field and the resistive force.« less

Effect of neodymium substitution on the electric and dielectric properties of Mn-Ni-Zn ferrite

NASA Astrophysics Data System (ADS)

Agami, W. R.

2018-04-01

Ferrite samples of Mn0.5Ni0.1Zn0.4NdxFe2-xO4 (x = 0.0, 0.01, 0.02, 0.05, 0.075 and 0.1) have been prepared by usual ceramic method. The temperature and composition dependences of the dc electric resistivity (ρdc) were studied. The frequency and composition dependences of the ac electric resistivity (ρac) and dielectric parameters (dielectric constant ε' and dielectric loss ε'') have been investigated. ρdc was found to decrease with temperature for all samples while it increases with increasing Nd3+ concentration. On the other hand, ρac and the dielectric properties were found to decrease with increasing the frequency while ρac increases and both ε' and ε'' decrease with increasing Nd3+ concentration. These results were explained by the Maxwell-Wagner two-layer model and Koops's theory. The improvement in dc and ac electric resistivities shows that these prepared materials are valid for decreasing the eddy current losses at high frequencies, so they can be used in the fabrication of multilayer chip inductor (MLCI) devices.

Effect of high pressure on the electrical resistivity of optimally doped YBa2Cu3O7-δ single crystals with unidirectional planar defects

NASA Astrophysics Data System (ADS)

Vovk, R. V.; Vovk, N. R.; Khadzhai, G. Ya.; Goulatis, I. L.; Chroneos, A.

2013-08-01

In the present work the effect of hydrostatic pressure up to 10 kbar on in-plane electrical resistivity of well-structured YBa2Cu3O7-δ (δ<0.15, Тс≈91 K, ΔТс≈0.3 K) single crystals was investigated. The influence of the twin boundaries on the electrical resistivity was minimized. The resistivities temperature dependences in the interval Тс up to 300 K can be approximated by taking into account the linear term at high temperatures and the fluctuation conductivity (Maki-Thompson model) near Тс. The parameters of the linear dependence of R(T) are decreasing as the pressure is increasing. Тс increases linearly when the pressure increases with the derivative dTc/dP≈0.080 K/kbar. Among the Maki-Thompson model parameters the inter-layer distance, d, can be considered to be independent from pressure, the transverse coherence length, ξc(0)∼0.1d.

Adjoint-state inversion of electric resistivity tomography data of seawater intrusion at the Argentona coastal aquifer (Spain)

NASA Astrophysics Data System (ADS)

Fernández-López, Sheila; Carrera, Jesús; Ledo, Juanjo; Queralt, Pilar; Luquot, Linda; Martínez, Laura; Bellmunt, Fabián

2016-04-01

Seawater intrusion in aquifers is a complex phenomenon that can be characterized with the help of electric resistivity tomography (ERT) because of the low resistivity of seawater, which underlies the freshwater floating on top. The problem is complex because of the need for joint inversion of electrical and hydraulic (density dependent flow) data. Here we present an adjoint-state algorithm to treat electrical data. This method is a common technique to obtain derivatives of an objective function, depending on potentials with respect to model parameters. The main advantages of it are its simplicity in stationary problems and the reduction of computational cost respect others methodologies. The relationship between the concentration of chlorides and the resistivity values of the field is well known. Also, these resistivities are related to the values of potentials measured using ERT. Taking this into account, it will be possible to define the different resistivities zones from the field data of potential distribution using the basis of inverse problem. In this case, the studied zone is situated in Argentona (Baix Maresme, Catalonia), where the values of chlorides obtained in some wells of the zone are too high. The adjoint-state method will be used to invert the measured data using a new finite element code in C ++ language developed in an open-source framework called Kratos. Finally, the information obtained numerically with our code will be checked with the information obtained with other codes.

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

NASA Astrophysics Data System (ADS)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

Characterizing soil erosion potential using electrical resistivity imaging : final report.

DOT National Transportation Integrated Search

2017-04-01

The erosion rate, or erodibility, of soil depends on many soil characteristics including: plasticity, : water content, grain size, percent clay, compaction, and shear strength. Many of these characteristics also : influence soil in situ bulk electric...

Characterizing soil erosion potential using electrical resistivity imaging : technical summary.

DOT National Transportation Integrated Search

2017-04-01

The erosion rate, or erodibility, of soil depends on many soil characteristics : including: plasticity, water content, grain size, percent clay, compaction, and shear : strength. Many of these characteristics also influence soil in situ bulk electric...

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance canmore » be explained using the deep trap model.« less

Translational resistivity/conductivity of coding sequences during exponential growth of Escherichia coli.

PubMed

Takai, Kazuyuki

2017-01-21

Codon adaptation index (CAI) has been widely used for prediction of expression of recombinant genes in Escherichia coli and other organisms. However, CAI has no mechanistic basis that rationalizes its application to estimation of translational efficiency. Here, I propose a model based on which we could consider how codon usage is related to the level of expression during exponential growth of bacteria. In this model, translation of a gene is considered as an analog of electric current, and an analog of electric resistance corresponding to each gene is considered. "Translational resistance" is dependent on the steady-state concentration and the sequence of the mRNA species, and "translational resistivity" is dependent only on the mRNA sequence. The latter is the sum of two parts: one is the resistivity for the elongation reaction (coding sequence resistivity), and the other comes from all of the other steps of the decoding reaction. This electric circuit model clearly shows that some conditions should be met for codon composition of a coding sequence to correlate well with its expression level. On the other hand, I calculated relative frequency of each of the 61 sense codon triplets translated during exponential growth of E. coli from a proteomic dataset covering over 2600 proteins. A tentative method for estimating relative coding sequence resistivity based on the data is presented. Copyright © 2016. Published by Elsevier Ltd.

Electrical Resistance Based Damage Modeling of Multifunctional Carbon Fiber Reinforced Polymer Matrix Composites

NASA Astrophysics Data System (ADS)

Hart, Robert James

In the current thesis, the 4-probe electrical resistance of carbon fiber-reinforced polymer (CFRP) composites is utilized as a metric for sensing low-velocity impact damage. A robust method has been developed for recovering the directionally dependent electrical resistivities using an experimental line-type 4-probe resistance method. Next, the concept of effective conducting thickness was uniquely applied in the development of a brand new point-type 4-probe method for applications with electrically anisotropic materials. An extensive experimental study was completed to characterize the 4-probe electrical resistance of CFRP specimens using both the traditional line-type and new point-type methods. Leveraging the concept of effective conducting thickness, a novel method was developed for building 4-probe electrical finite element (FE) models in COMSOL. The electrical models were validated against experimental resistance measurements and the FE models demonstrated predictive capabilities when applied to CFRP specimens with varying thickness and layup. These new models demonstrated a significant improvement in accuracy compared to previous literature and could provide a framework for future advancements in FE modeling of electrically anisotropic materials. FE models were then developed in ABAQUS for evaluating the influence of prescribed localized damage on the 4-probe resistance. Experimental data was compiled on the impact response of various CFRP laminates, and was used in the development of quasi- static FE models for predicting presence of impact-induced delamination. The simulation-based delamination predictions were then integrated into the electrical FE models for the purpose of studying the influence of realistic damage patterns on electrical resistance. When the size of the delamination damage was moderate compared to the electrode spacing, the electrical resistance increased by less than 1% due to the delamination damage. However, for a specimen with large delamination extending beyond the electrode locations, the oblique resistance increased by 30%. This result suggests that for damage sensing applications, the spacing of electrodes relative to the size of the delamination is important. Finally CT image data was used to model 3-D void distributions and the electrical response of such specimens were compared to models with no voids. As the void content increased, the electrical resistance increased non-linearly. The relationship between void content and electrical resistance was attributed to a combination of three factors: (i) size and shape, (ii) orientation, and (iii) distribution of voids. As a whole, the current thesis provides a comprehensive framework for developing predictive, resistance-based damage sensing models for CFRP laminates of various layup and thickness.

Bias current dependence of resistivity in Co0.4Fe0.4B0.2 ultrathin film prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Mandal, Snehal; Mazumdar, Dipak; Das, I.

2018-04-01

Ultrathin film of Co0.4Fe0.4B0.2 was prepared on p-type Si (100) substrate by RF magnetron sputtering. X-Ray Reflectivity and Atomic Force Microscopy measurements were performed to estimate the thickness and surface roughness of the film. Electrical transport measurements were performed by four-probe method in a current-in-plane (CIP) geometry. Presence of non-linearity in the current-voltage (I-V) characteristics was observed at higher current range. The electrical resistivity was found to change by several orders of magnitude (105) by changing the bias current from nano-ampere (nA) to milli-ampere (mA) range. This bias current dependence of the resistivity has been explained by different transport mechanisms.

High pressure study of Pu(0.92)Am(0.08) binary alloy.

PubMed

Klosek, V; Griveau, J C; Faure, P; Genestier, C; Baclet, N; Wastin, F

2008-07-09

The phase transitions (by means of x-ray diffraction) and electrical resistivity of a Pu(0.92)Am(0.08) binary alloy were determined under pressure (up to 2 GPa). The evolution of atomic volume with pressure gives detailed information concerning the degree of localization of 5f electronic states and their delocalization process. A quasi-linear V = f(P) dependence reflects subtle modifications of the electronic structure when P increases. The electrical resistivity measurements reveal the very high stability of the δ phase for pressures less than 0.7 GPa, since no martensitic-like transformation occurs at low temperature. Remarkable electronic behaviours have also been observed. Finally, resistivity curves have shown the temperature dependence of the phase transformations together with unexpected kinetic effects.

Temperature Dependence of Electrical and Thermal Conduction in Single Silver Nanowire

DTIC Science & Technology

2015-06-02

Methods section. After knowing the geometrical sizes of the films, the electrical resistivity can be calculated . The temper- ature dependent electrical...plane spacing for peaks (111), (220) and (311) are 2.3616 Å, 1.4518 Å and 1.2287 Å respectively. The corresponding lattice constant can be calculated ...21 nm). So the upper limit of the thermal conductivity ( C vl 3ph vκ = /, ) is calculated as 12.3 W/K·m at 36 K. The phonon mean free path should

Electrical properties of granite with implications for the lower crust.

USGS Publications Warehouse

Olhoeft, G.R.

1981-01-01

The electrical properties of granite appear to be dominantly controlled by the amount of free water in the granite and by temperature. Minor contributions to the electrical properties are provided by hydrostatic and lithostatic pressure, structurally bound water, oxygen fugacity, and other parameters. The effect of sulphur fugacity may be important but is experimentally unconfirmed. In addition to changing the magnitude of electrical properties, the amount and chemistry of water in granite significantly changes the temperature dependence of the electrical properties. With increasing temperature, changes in water content retain large, but lessened, effects on electrical properties. Near room temperature, a monolayer of water will decrease the electrical resistivity by an order of magnitude. Several weight-percent water may decrease the electrical resistivity by as much as nine orders of magnitude and decrease the thermal activation energy by a factor of five. At elevated temperatures just below granitic melting, a few weight-percent water may still decrease the resistivity by as much as 3 orders of magnitude and the activation energy by a factor of two.-Author

Pressure and magnetic field effects on the valence transition of EuRh2Si2

NASA Astrophysics Data System (ADS)

Mitsuda, Akihiro; Kishaba, Eigo; Fujimoto, Takumi; Oyama, Kohei; Wada, Hirofumi; Mizumaki, Masaichiro; Kawamura, Naomi; Ishimatsu, Naoki

2018-05-01

We have measured the X-ray absorption spectra (XAS), electrical resistivity and magnetic susceptibility of EuRh2Si2, which undergoes a valence transition under high pressures. A sharp decrease in the Eu valence determined from the XAS was observed at around 70 K in the temperature dependence at P = 1.2-1.9 GPa. In the temperature dependence of electrical resistivity and magnetic susceptibility, we observed jumps associated with the temperature-induced valence transition under high pressures. The magnetoresistance detected a field-induced valence transition. The results are discussed from the thermodynamic point of view.

Better Modeling of Electrostatic Discharge in an Insulator

NASA Technical Reports Server (NTRS)

Pekov, Mihail

2010-01-01

An improved mathematical model has been developed of the time dependence of buildup or decay of electric charge in a high-resistivity (nominally insulating) material. The model is intended primarily for use in extracting the DC electrical resistivity of such a material from voltage -vs.- current measurements performed repeatedly on a sample of the material over a time comparable to the longest characteristic times (typically of the order of months) that govern the evolution of relevant properties of the material. This model is an alternative to a prior simplistic macroscopic model that yields results differing from the results of the time-dependent measurements by two to three orders of magnitude.

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

NASA Technical Reports Server (NTRS)

Liu, S. Q.; Wu, N. J.; Ignatiev, A.

2001-01-01

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Local Magnetic Measurements of Trapped Flux Through a Permanent Current Path in Graphite

NASA Astrophysics Data System (ADS)

Stiller, Markus; Esquinazi, Pablo D.; Quiquia, José Barzola; Precker, Christian E.

2018-04-01

Temperature- and field-dependent measurements of the electrical resistance of different natural graphite samples suggest the existence of superconductivity at room temperature in some regions of the samples. To verify whether dissipationless electrical currents are responsible for the trapped magnetic flux inferred from electrical resistance measurements, we localized them using magnetic force microscopy on a natural graphite sample in remanent state after applying a magnetic field. The obtained evidence indicates that at room temperature a permanent current flows at the border of the trapped flux region. The current path vanishes at the same transition temperature T_c≈ 370 K as the one obtained from electrical resistance measurements on the same sample. This sudden decrease in the phase is different from what is expected for a ferromagnetic material. Time-dependent measurements of the signal show the typical behavior of flux creep of a permanent current flowing in a superconductor. The overall results support the existence of room-temperature superconductivity at certain regions in the graphite structure and indicate that magnetic force microscopy is suitable to localize them. Magnetic coupling is excluded as origin of the observed phase signal.

Improved Geologic Interpretation of Non-invasive Electrical Resistivity Imaging from In-situ Samples

NASA Astrophysics Data System (ADS)

Mucelli, A.; Aborn, L.; Jacob, R.; Malusis, M.; Evans, J.

2016-12-01

Non-invasive geophysical techniques are useful in characterizing the subsurface geology without disturbing the environment, however, the ability to interpret the subsurface is enhanced by invasive work. Since geologic materials have electrical resistivity values it allows for a geologic interpretation to be made based on variations of electrical resistivity measured by electrical resistivity imaging (ERI). This study focuses on the pre-characterization of the geologic subsurface from ERI collected adjacent to the Montandon Marsh, a wetland located near Lewisburg, PA within the West Branch of the Susquehanna River watershed. The previous invasive data, boreholes, indicate that the subsurface consists of limestone and shale bedrock overlain with sand and gravel deposits from glacial outwash and aeolian processes. The objective is to improve our understanding of the subsurface at this long-term hydrologic research site by using excavation results, specifically observed variations in geologic materials and electrical resistivity laboratory testing of subsurface samples. The pre-excavation ERI indicated that the shallow-most geologic material had a resistivity value of 100-500 ohm-m. In comparison, the laboratory testing indicated the shallow-most material had the same range of electrical resistivity values depending on saturation levels. The ERI also showed that there was an electrically conductive material, 7 to 70 ohm-m, that was interpreted to be clay and agreed with borehole data, however, the excavation revealed that at this depth range the geologic material varied from stratified clay to clay with cobbles to weathered residual clay. Excavation revealed that the subtle variations in the electrical conductive material corresponded well with the variations in the geologic material. We will use these results to reinterpret previously collected ERI data from the entire long-term research site.

Intrinsic electrical properties of LuFe2O4

NASA Astrophysics Data System (ADS)

Lafuerza, Sara; García, Joaquín; Subías, Gloria; Blasco, Javier; Conder, Kazimierz; Pomjakushina, Ekaterina

2013-08-01

We here revisit the electrical properties of LuFe2O4, compound candidate for exhibiting multiferroicity. Measurements of dc electrical resistivity as a function of temperature, electric-field polarization measurements at low temperatures with and without magnetic field, and complex impedance as a function of both frequency and temperature were carried out in a LuFe2O4 single crystal, perpendicular and parallel to the hexagonal c axis, and in several ceramic polycrystalline samples. Resistivity measurements reveal that this material is a highly anisotropic semiconductor, being about two orders of magnitude more resistive along the c axis. The temperature dependence of the resistivity indicates a change in the conduction mechanism at TCO ≈ 320 K from thermal activation above TCO to variable range hopping below TCO. The resistivity values at room temperature are relatively small and are below 5000 Ω cm for all samples but we carried out polarization measurements at sufficiently low temperatures, showing that electric-field polarization curves are a straight line as expected for a paraelectric or antiferroelectric material. Furthermore, no differences are found in the polarization curves when a magnetic field is applied either parallel or perpendicular to the electric field. The analysis of the complex impedance data corroborates that the claimed colossal dielectric constant is a spurious effect mainly derived from the capacitance of the electrical contacts. Therefore, our data unequivocally evidence that LuFe2O4 is not ferroelectric.

Magnetic and electrical properties of several Mn-based amorphous alloys

NASA Astrophysics Data System (ADS)

Obi, Y.; Morita, H.; Fujimori, H.

1987-03-01

Magnetic and electrical properties of amorphous Mn-Y, Mn-Zr, and Mn-Nb alloys have been investigated. All these alloys have a temperature-dependent susceptibility which is well fitted by a Curie-Weiss law. This implies the existence of localized magnetic moments associated with the Mn atoms. In addition, amorphous Mn-Y alloys exhibit spin-glass characteristics at low temperature. The experimental results of the electrical resistivity show that the temperature coefficient of resistivity (TCR) of both Mn-Y and Mn-Zr are negative, while Mn-Nb has a positive TCR. On the other hand, the resistivity-temperature curves of Mn-Zr and Mn-Nb have nearly the same tendency but are different from that of Mn-Y.

Theoretical investigation of dielectric corona pre-ionization TEA nitrogen laser based on transmission line method

NASA Astrophysics Data System (ADS)

Bahrampour, Alireza; Fallah, Robabeh; Ganjovi, Alireza A.; Bahrampour, Abolfazl

2007-07-01

This paper models the dielectric corona pre-ionization, capacitor transfer type of flat-plane transmission line traveling wave transverse excited atmospheric pressure nitrogen laser by a non-linear lumped RLC electric circuit. The flat-plane transmission line and the pre-ionizer dielectric are modeled by a lumped linear RLC and time-dependent non-linear RC circuit, respectively. The main discharge region is considered as a time-dependent non-linear RLC circuit where its resistance value is also depends on the radiated pre-ionization ultra violet (UV) intensity. The UV radiation is radiated by the resistance due to the surface plasma on the pre-ionizer dielectric. The theoretical predictions are in a very good agreement with the experimental observations. The electric circuit equations (including the ionization rate equations), the equations of laser levels population densities and propagation equation of laser intensities, are solved numerically. As a result, the effects of pre-ionizer dielectric parameters on the electrical behavior and output laser intensity are obtained.

Influence of temperature on the electrical conductivity of leachate from municipal solid waste.

PubMed

Grellier, Solenne; Robain, Henri; Bellier, Gérard; Skhiri, Nathalie

2006-09-01

A bioreactor landfill is designed to manage municipal solid waste, through accelerated waste biodegradation, and stabilisation of the process by means of the controlled addition of liquid, i.e. leachate recirculation. The measurement of electrical resistivity by Electrical Resistivity Tomography (ERT) allows to monitor water content present in the bioreactors. Variations in electrical resistivity are linked to variations in moisture content and temperature. In order to overcome this ambiguity, two laboratory experiments were carried out to establish a relationship between temperature and electrical conductivity: the first set of measurements was made for leachate alone, whereas the second set was made with two different granular media saturated with leachate. Both experiments confirm a well known increase in conductivity of about 2% degrees C(-1). However, higher suspended matter concentrations lead to a lower dependence of electrical conductivity on temperature. Furthermore, for various porous media saturated with an identical leachate, the higher the specific surface of the granular matrix, the lower the effective bulk electrical conductivity. These observations show that a correct understanding of the electrical properties of liquids requires the nature and (in particular) the size of the electrical charge carriers to be taken into account.

The electrical transport properties of liquid Rb using pseudopotential theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, A. B., E-mail: amit07patel@gmail.com; Bhatt, N. K., E-mail: amit07patel@gmail.com; Thakore, B. Y., E-mail: amit07patel@gmail.com

2014-04-24

Certain electric transport properties of liquid Rb are reported. The electrical resistivity is calculated by using the self-consistent approximation as suggested by Ferraz and March. The pseudopotential due to Hasegawa et al for full electron-ion interaction, which is valid for all electrons and contains the repulsive delta function due to achieve the necessary s-pseudisation was used for the calculation. Temperature dependence of structure factor is considered through temperature dependent potential parameter in the pair potential. Finally, thermo-electric power and thermal conductivity are obtained. The outcome of the present study is discussed in light of other such results, and confirms themore » applicability of pseudopotential at very high temperature via temperature dependent pair potential.« less

Multiple electrical phase transitions in Al substituted barium hexaferrite

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Supriya, Sweety; Kar, Manoranjan

2017-12-01

Barium hexaferrite is known to be a very good ferromagnetic material. However, it shows very good dielectric properties, i.e., the dielectric constant is comparable to that of the ferroelectric material. However, its crystal symmetry does not allow it to be a ferroelectric material. Hence, the electrical properties have revived the considerable research interest on these materials, not only for academic interest, but also for technological applications. There are a few reports on temperature dependent dielectric behavior of these materials. However, the exact cause of dielectric as well as electrical conductivity is yet to be established. Hence, Al (very good conducting material) substituted barium hexaferrite (BaFe12-xAlxO19, x = 0.0-4.0) has been prepared by following the modified sol-gel method to understand the ac and DC electrical properties of these materials. The crystal structure and parameters have been studied by employing the XRD and FTIR techniques. There are two transition temperatures, which have been observed in the temperature dependent ac dielectric and DC resistivity measurement. The response of dielectric behaviors to temperature is similar to that of the ferroelectric material; however, the dielectric polarization is due to the polaron hopping, which is evident from the DC resistivity analysis. Hence, the present observations lead to understand the electrical properties of barium hexaferrite. The frequency dependent dielectric dispersion can be understood by the modified Debye model. More interestingly, the dielectric constant decreases and DC resistivity increases with the increase in the Al concentration, which has the correlation between bond length modifications in the crystal due to substitution.

Specific features of electrical properties of porous biocarbons prepared from beech wood and wood artificial fiberboards

NASA Astrophysics Data System (ADS)

Popov, V. V.; Orlova, T. S.; Magarino, E. Enrique; Bautista, M. A.; Martínez-Fernández, J.

2011-02-01

This paper reports on comparative investigations of the structural and electrical properties of biomorphic carbons prepared from natural beech wood, as well as medium-density and high-density fiberboards, by means of carbonization at different temperatures T carb in the range 650-1000°C. It has been demonstrated using X-ray diffraction analysis that biocarbons prepared from medium-density and high-density fiberboards at all temperatures T carb contain a nanocrystalline graphite component, namely, three-dimensional crystallites 11-14 Å in size. An increase in the carbonization temperature T carb to 1000°C leads to the appearance of a noticeable fraction of two-dimensional graphene particles with the same sizes. The temperature dependences of the electrical resistivity ρ of the biomorphic carbons have been measured and analyzed in the temperature range 1.8-300 K. For all types of carbons under investigation, an increase in the carbonization temperature T carb from 600 to 900°C leads to a change in the electrical resistivity at T = 300 K by five or six orders of magnitude. The dependences ρ( T) for these materials are adequately described by the Mott law for the variable-range hopping conduction. It has been revealed that the temperature dependence of the electrical resistivity exhibits a hysteresis, which has been attributed to thermomechanical stresses in an inhomogeneous structure of the biocarbon prepared at a low carbonization temperature T carb. The crossover to the conductivity characteristic of disordered metal systems is observed at T carb ≳ 1000°C.

Electron transport properties of bis[2-(2-hydroxyphenyl)-pyridine]beryllium investigated by impedance spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yanping; Chen, Jiangshan; Huang, Jinying

2014-06-14

The electron transport properties of bis[2-(2-hydroxyphenyl)-pyridine] beryllium (Bepp{sub 2}) are investigated by impedance spectroscopy over a frequency range of 10 Hz to 13 MHz. The Cole-Cole plots demonstrate that the Bepp{sub 2}-based device can be represented by a single parallel resistance R{sub p} and capacitance C{sub p} network with a series resistance R{sub s}. The current-voltage characteristics and the variation of R{sub p} with applied bias voltage indicate the electron conduction of space-charge-limited current with exponential trap distributions in Bepp{sub 2}. It can be seen that the electron mobility exhibits strong field-dependence in low electric field region and almost saturate in highmore » electric field region. It is experimentally found that Bepp{sub 2} shows dispersion transport and becomes weak as the electric field increases. The activation energy is determined to be 0.043 eV by temperature-dependent conductivity, which is consistent with the result obtained from the temperature-dependent current density characteristics. The electron mobility reaches the orders of 10{sup −6}–10{sup −5} cm{sup 2} V{sup −1} s{sup −1}, depending on the electric field.« less

Tunable electrical conductivity of individual graphene oxide sheets reduced at "low" temperatures.

PubMed

Jung, Inhwa; Dikin, Dmitriy A; Piner, Richard D; Ruoff, Rodney S

2008-12-01

Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125-240 degrees C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 10(6) times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.

The structural and electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites

NASA Astrophysics Data System (ADS)

Ruli, F.; Kurniawan, B.; Imaduddin, A.

2018-04-01

In this paper, the authors report the electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites synthesized using sol-gel method. The X-ray diffraction (XRD) patterns of polycrystalline La0.8Ca0.17Ag0.03MnO3 samples reveal an orthorhombic perovskite structure with Pnma space group. Analysis using energy dispersive X-ray (EDX) confirms that the sample contains all expected chemical elements without any additional impurity. The measurement of resistivity versus temperature using cryogenic magnetometer was performed to investigate the electrical properties. The results show that the electrical resistivity of polycrystalline La0.8Ca0.17Ag0.03MnO3 exhibits metalic behavior below 244 K. The temperature dependence of electrical resistivity dominantly emanates from electron-electron scattering and the grain/domain boundary play a important role in conduction mechanism in polycrystalline La0.8Ca0.17Ag0.03MnO3.

Determination of consolidation properties using electrical resistivity

NASA Astrophysics Data System (ADS)

Kibria, Golam; Hossain, Sahadat; Khan, Mohammad Sadik

2018-05-01

Electrical conductivity is an indirect method used to evaluate pore-structures and their influence on macro and microscale behavior of soils. Although this method can provide useful information about the consolidation properties of soil samples, insufficient studies have been conducted to identify correlations between electrical and consolidation properties. The current study presents electrical resistivity responses of clayey samples at different consolidation stages. The consolidation properties of four soil specimens were measured in conjunction with electrical conductivity. Scanning electron microscope (SEM) analyses were performed on soil samples before and after consolidation to identify the changes in fabric morphology due to the application of loads. It was observed that the electrical conductivity of samples decreased with the increase of pressure, and the trends of variations were similar to e vs. logP curves. Although a linear correlation exists between electrical conductivity and void ratio, the relationship depends on the structural changes in clay particles. Therefore, changes in fabric structures were analyzed using SEM images, and results showed that the aspect ratio of the particles increased as much as 18.3% after consolidation. Based on the investigation, the coefficient of consolidations and one-dimensional strain were determined using electrical resistivity measurements.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.

PubMed

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-08-11

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities

PubMed Central

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-01-01

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott’s variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics. PMID:26260674

Seismic refraction and electrical resistivity tests for fracture induced hydraulic anisotropy in a mountain watershed.

NASA Astrophysics Data System (ADS)

Mendieta, A. L.; Bradford, J.; Liberty, L. M.; McNamara, J. P.

2016-12-01

Granitic based terrains often have complex hydrogeological systems. It is often assumed that the bedrock is impermeable, unless it is fractured. If the bedrock is fractured this can greatly affect fluid flow, depending on fracture density and orientation. Recently there has been a substantial increase in the number of geophysical studies designed to investigate hydrologic processes in mountain watersheds, however few of these studies have taken fracture induced geophysical and hydraulic anisotropy into consideration. Vertically oriented fractures with a preferred orientation produce azimuthal anisotropy in the electrical resistivity, the seismic primary wave (P-wave) velocity, and the hydraulic permeability. By measuring the electrical and seismic anisotropy we can estimate fracture orientation and density which improves our understanding of hydraulic properties. Despite numerous previous studies of the hydrologic system, the subsurface hydraulic system at the Dry Creek Experimental Watershed (DCEW), located near Boise, Idaho, is not completely understood. This is particularly true of the deep (>5m) system which is difficult to study using conventional hydrologic measurements, particularly in rugged and remote mountain environments. From previous studies, it is hypothesized that there is a system of fractures that may be aligned according to the local stress field. To test for the preferential alignment, ergo the direction of preferential water flow, we collected seismic and electrical resistivity profiles along different azimuths. The preliminary results show an azimuthal dependence of the P-wave velocities in the bedrock, at depths greater than 18 m; P-wave velocities range from 3500 to 4100 m/s, which represents a 17.5 % difference. We interpret this difference to be caused by fractures present in the bedrock. At the same location, we measured an electric resistivity value of 29 ohm-m, and we expect a difference of 37 %, if the fractures are fully saturated. Future studies will include coincident multi-azimuthal electrical resistivity surveys both to verify the results of the seismic study and to improve our understanding of the hydraulic properties.

Grain Boundary Resistivity of Yttria-Stabilized Zirconia at 1400°C

DOE PAGES

Wang, J.; Du, A.; Yang, Di; ...

2013-01-01

Tmore » he grain size dependence of the bulk resistivity of 3 mol% yttria-stabilized zirconia at 1400°C was determined from the effect of a dc electric field E a = 18.1  V/cm on grain growth and the corresponding electric current during isothermal annealing tests. Employing the brick layer model, the present annealing test results were in accordance with extrapolations of the values obtained at lower temperature employing impedance spectroscopy and 4-point-probe dc. he combined values give that the magnitude of the grain boundary resistivity ρ b = 133  ohm-cm. he electric field across the grain boundary width was 28–43 times the applied field for the grain size and current ranges in the present annealing test.« less

Modeling of electric and heat processes in spot resistance welding of cross-wire steel bars

NASA Astrophysics Data System (ADS)

Iatcheva, Ilona; Darzhanova, Denitsa; Manilova, Marina

2018-03-01

The aim of this work is the modeling of coupled electric and heat processes in a system for spot resistance welding of cross-wire reinforced steel bars. The real system geometry, dependences of material properties on the temperature, and changes of contact resistance and released power during the welding process have been taken into account in the study. The 3D analysis of the coupled AC electric and transient thermal field distributions is carried out using the finite element method. The novel feature is that the processes are modeled for several successive time stages, corresponding to the change of contact area, related contact resistance, and reduction of the released power, occurring simultaneously with the creation of contact between the workpieces. The values of contact resistance and power changes have been determined on the basis of preliminary experimental and theoretical investigations. The obtained results present the electric and temperature field distributions in the system. Special attention has been paid to the temperature evolution at specified observation points and lines in the contact area. The obtained information could be useful for clarification of the complicated nature of interrelated electric, thermal, mechanical, and physicochemical welding processes. Adequate modeling is also an opportunity for proper control and improvement of the system.

Electrical conduction hysteresis in carbon black-filled butyl rubber compounds

NASA Astrophysics Data System (ADS)

Alzamil, M. A.; Alfaramawi, K.; Abboudy, S.; Abulnasr, L.

2018-04-01

Temperature and concentration dependence of electrical resistance of butyl rubber filled with GPF carbon black was carried out. Current-voltage (I-V) characteristics at room-temperature were also investigated. The I-V characteristics show that the behavior is linear at small voltages up to approximately 0.15 V and currents up to 0.05 mA indicating that the conduction mechanism was probably due to electron tunneling from the end of conductive path to the other one under the action of the applied electric field. At higher voltages, a nonlinear behavior was noticed. The nonlinearity was attributed to the joule heating effects. Electrical resistance of the butyl/GPF composites was measured as a function of temperature during heating and cooling cycles from 300 K and upward to a specific temperature. When the specimens were heated up, the resistance was observed to increase continuously with the rise of temperature. However, when the samples were cooled down, the resistance was observed to decrease following a different path. The presence of conduction hysteresis behavior in the resistance-temperature curves during the heating and cooling cycles was then verified. The electrical conduction of the composite system is supposed to follow an activation conduction mechanism. Activation energy was calculated at different filler concentrations for both the heating and cooling processes.

Redistribution of oxygen ions in single crystal YBa2Cu3O7-x owing to external hydrostatic pressure

NASA Astrophysics Data System (ADS)

Boiko, Yu. I.; Bogdanov, V. V.; Vovk, R. V.; Khadzhai, G. Ya.; Savich, S. V.

2018-01-01

The effect of high hydrostatic pressure on the temperature dependences of the electrical resistance in the basal plane of single crystal YBa2Cu3O7-x with an oxygen deficit is studied. It is found that an external hydrostatic pressure P ≈ 7 kbar substantially intensifies the diffusive coalescence of oxygen clusters, i.e., causes an increase in their average size. This, in turn, produces an increased number of negative U-centers whose presence leads to the appearance of a phase capable of generating paired carriers of electrical charge and is, therefore, characterized by a higher transition temperature Tc. Changes in the form of the temperature and time dependences of the electrical resistivity under external hydrostatic pressure are discussed in terms of this same hypothesis regarding the mechanism of diffusive coalescence of oxygen clusters.

Pressure dependence of the electron-phonon interaction and the normal-state resistivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rapp, O.; Sundqvist, B.

1981-07-01

Accurate measurements of the electrical resistance as a function of temperature and pressure are reported for Sn, Zr, dhcp La, and V. These measurements cover a temperature region around room temperature and pressures up to 1.3 GPa. From these data, including also our previous measurements for Al and published results for Pb, the pressure dependence of drho/dT (the resistivity-temperature derivative) is obtained. This quantity is found to be a significant factor in the pressure dependence of the electron-phonon interaction parameter lambda. For the nontransition metals the relative pressure dependence of drho/dT is much larger than the compressibility. Therefore the pressuremore » dependence of the superconducting T/sub c/ is quantitatively well accounted for by the resistance data for these metals. For the transition metals the pressure dependence of drho/dT is relatively smaller and T/sub c/(p) calculated from the resistance data is, at the best, only qualitatively correct. These differences are discussed. Estimates for the pressure dependence of the plasma frequency are obtained.« less

Laboratory measurements of electrical resistivity versus water content on small soil cores

NASA Astrophysics Data System (ADS)

Robain, H.; Camerlynck, C.; Bellier, G.; Tabbagh, A.

2003-04-01

The assessment of soil water content variations more and more leans on geophysical methods that are non invasive and that allow a high spatial sampling. Among the different methods, DC electrical imaging is moving forward. DC Electrical resistivity shows indeed strong seasonal variations that principally depend on soil water content variations. Nevertheless, the widely used Archie's empirical law [1], that links resistivity with voids saturation and water conductivity is not well suited to soil materials with high clay content. Furthermore, the shrinking and swelling properties of soil materials have to be considered. Hence, it is relevant to develop new laboratory experiments in order to establish a relation between electrical resistivity and water content taking into account the rheological and granulometrical specificities of soil materials. The experimental device developed in IRD laboratory allows to monitor simultaneously (i) the water content, (ii) the electrical resistivity and (iii) the volume of a small cylindrical soil core (100cm3) put in a temperature controlled incubator (30°C). It provides both the shrinkage curve of the soil core (voids volume versus water content) and the electrical resistivity versus water content curve The modelisation of the shrinkage curve gives for each moisture state the water respectively contained in macro and micro voids [2], and then allows to propose a generalized Archie's like law as following : 1/Rs = 1/Fma.Rma + 1/Fmi.Rmi and Fi = Ai/(Vi^Mi.Si^Ni) with Rs : the soil resistivity. Fma and Fmi : the so called "formation factor" for macro and micro voids, respectively. Rma and Rmi : the resistivity of the water contained in macro and micro voids, respectively. Vi : the volume of macro and micro voids, respectively. Si : the saturation of macro and micro voids, respectively. Ai, Mi and Ni : adjustment coefficients. The variations of Rmi are calculated, assuming that Rma is a constant. Indeed, the rise of ionic concentration in water may be neglected during the sewage of macro voids as it corresponds to a small quantity of water for the studied samples. Soil solid components are generally electrical insulators, the conduction of electrical current only lies on two phenomenon occurring in water : (i) volume conduction controlled by the electrolyte concentration in water and the geometrical characteristics of macro voids network ; (ii) surface conduction controlled by the double diffuse layer that depends on the solid-liquid interactions, the specific surface of clay minerals and the geometry of particles contacts. For the water contained in macro voids the preeminent phenomenon seems to be volume conduction while for the water contained in micro voids, it seems to be surface conduction. This hypothesis satisfyingly explains the shape of the electrical resistivity versus water content curves obtained for three different oxisols with clayey, clayey-sandy and sandy-clayey texture. [1] Archie G.E. 1942. The electrical resistivity log as an aid in determining some reservoirs characteristics. Trans. AIME, 146, 54-67. [2] Braudeau E. et al. 1999. New device and method for soil shrinkage curve measurement and characterization. S.S.S.A.J., 63(3), 525-535.

Effects of coupling between sample and electrode on the electrical resistivity measurements of conductive samples

NASA Astrophysics Data System (ADS)

Lee, T. J.; Lee, S. K.

2015-12-01

A resistivity measurement system for conductive core samples has been setup using a high resolution nano-voltmeter. Using the system, in this study, various coupling effects between electrodes and the samples are discussed including contact resistance, lead resistance, temperature dependence, and heat produced within the samples by applied current. The lead resistance was over 10 times higher than the resistance of the conductive samples such as graphite or nichrome, even though the electrodes and lead lines were made of silver. Furthermore, lead resistance itself showed very strong temperature dependence, so that it is essential to subtract the lead resistance from the measured values at corresponding temperature. Minimization of contact resistance is very important, so that the axial loads are needed as big as possible unless the deformation of sample occurs.

Scenario Evaluator for Electrical Resistivity survey pre-modeling tool

USGS Publications Warehouse

Terry, Neil; Day-Lewis, Frederick D.; Robinson, Judith L.; Slater, Lee D.; Halford, Keith J.; Binley, Andrew; Lane, John W.; Werkema, Dale D.

2017-01-01

Geophysical tools have much to offer users in environmental, water resource, and geotechnical fields; however, techniques such as electrical resistivity imaging (ERI) are often oversold and/or overinterpreted due to a lack of understanding of the limitations of the techniques, such as the appropriate depth intervals or resolution of the methods. The relationship between ERI data and resistivity is nonlinear; therefore, these limitations depend on site conditions and survey design and are best assessed through forward and inverse modeling exercises prior to field investigations. In this approach, proposed field surveys are first numerically simulated given the expected electrical properties of the site, and the resulting hypothetical data are then analyzed using inverse models. Performing ERI forward/inverse modeling, however, requires substantial expertise and can take many hours to implement. We present a new spreadsheet-based tool, the Scenario Evaluator for Electrical Resistivity (SEER), which features a graphical user interface that allows users to manipulate a resistivity model and instantly view how that model would likely be interpreted by an ERI survey. The SEER tool is intended for use by those who wish to determine the value of including ERI to achieve project goals, and is designed to have broad utility in industry, teaching, and research.

Electrical characteristics of rocks in fractured and caved reservoirs

NASA Astrophysics Data System (ADS)

Tang, Tianzhi; Lu, Tao; Zhang, Haining; Jiang, Liming; Liu, Tangyan; Meng, He; Wang, Feifei

2017-12-01

The conductive paths formed by fractures and cave in complex reservoirs differ from those formed by pores and throats in clastic rocks. In this paper, a new formation model based on fractured and caved reservoirs is established, and the electrical characteristics of rocks are analyzed with different pore structures using resistance law to understand their effects on rock resistivity. The ratio of fracture width to cave radius (C e value) and fracture dip are employed to depict pore structure in this model. Our research shows that the electrical characteristics of rocks in fractured and caved reservoirs are strongly affected by pore structure and porous fluid distribution. Although the rock electrical properties associated with simple pore structure agree well with Archie formulae, the relationships between F and φ or between I and S w , in more complicated pore structures, are nonlinear in double logarithmic coordinates. The parameters in Archie formulae are not constant and they depend on porosity and fluid saturation. Our calculations suggest that the inclined fracture may lead to resistivity anisotropy in the formation. The bigger dip the inclining fracture has, the more anisotropy the formation resistivity has. All of these studies own practical sense for the evaluation of oil saturation using resistivity logging data.

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Birkett, Martin; Penlington, Roger

2016-07-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

Effect of Carbon on the Electrical Properties of Copper Oxide-Based Bulk Composites

NASA Astrophysics Data System (ADS)

Kalinin, Yu. E.; Kashirin, M. A.; Makagonov, V. A.; Pankov, S. Yu.; Sitnikov, A. V.

2018-04-01

The effect of carbon filler on the electrical resistance and the thermopower of copper oxide-based composites produced by ceramic technology by hot pressing has been studied. It is found that the dependences of the electrical resistivity on the filler concentration are characteristic by S-like curves that are typical of percolation systems; in this case, the resistivity decreases more substantially as the carbon content increases as compared to the decrease in thermopower value, which is accompanied by the existence of the maximum of the factor of thermoelectric power near the percolation threshold. The studies of the temperature dependences of the resistivity and the thermopower at low temperatures show that, in the range 240-300 K, the predominant mechanism of the electrotransfer of all the composites under study is the hopping mechanism. At temperatures lower than 240 K, the composites with a nanocrystalline CuO matrix have a hopping conductivity with a variable hopping distance over localized states of the matrix near the Fermi level, which is related to the conductivity over intergrain CuO boundaries. A schematic model of the band structure of nanocrystalline CuO with carbon filler is proposed on the base of the analysis of the found experimental regularities of the electrotransfer.

Voltage and frequency dependence of prestin-associated charge transfer

PubMed Central

Sun, Sean X.; Farrell, Brenda; Chana, Matthew S.; Oster, George; Brownell, William E.; Spector, Alexander A.

2009-01-01

Membrane protein prestin is a critical component of the motor complex that generates forces and dimensional changes in cells in response to changes in the cell membrane potential. In its native cochlear outer hair cell, prestin is crucial to the amplification and frequency selectivity of the mammalian ear up to frequencies of tens of kHz. Other cells transfected with prestin acquire voltage-dependent properties similar to those of the native cell. The protein performance is critically dependent on chloride ions, and intrinsic protein charges also play a role. We propose an electro-diffusion model to reveal the frequency and voltage dependence of electric charge transfer by prestin. The movement of the combined charge (i.e., anion and protein charges) across the membrane is described with a Fokker-Planck equation coupled to a kinetic equation that describes the binding of chloride ions to prestin. We found a voltage-and frequency-dependent phase shift between the transferred charge and the applied electric field that determines capacitive and resistive components of the transferred charge. The phase shift monotonically decreases from zero to -90 degree as a function of frequency. The capacitive component as a function of voltage is bell-shaped, and decreases with frequency. The resistive component is bell-shaped for both voltage and frequency. The capacitive and resistive components are similar to experimental measurements of charge transfer at high frequencies. The revealed nature of the transferred charge can help reconcile the high-frequency electrical and mechanical observations associated with prestin, and it is important for further analysis of the structure and function of this protein. PMID:19490917

Temperature-dependent resistance switching in SrTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jian-kun; University of Chinese Academy of Sciences, Beijing 100049; Ma, Chao

2016-06-13

Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switchingmore » effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.« less

Subsurface Ice Detection via Low Frequency Surface Electromagnetic Method

NASA Astrophysics Data System (ADS)

Stillman, D. E.; Grimm, R. E.; Mcginnis, R. N.

2014-12-01

The geophysical detection of ice in the Cryosphere is typically conducted by measuring the absence of water. These interpretations can become non-unique in dry soils or in clay- and silt-rich soils that contain significant quantities of unfrozen water. Extensive laboratory measurements of electrical properties were made on permafrost samples as a function of frequency, temperature, and water content. These laboratory measurements show that the amount of ice can be uniquely obtained by measuring a frequency dependence of the electrical properties over a large frequency range (20 kHz - 10 Hz). In addition, the electrical properties of permafrost are temperature dependent, which can allow for an estimate of subsurface temperature. In order to test this approach in the field, we performed field surveys at four locations in Alaska. We used three low frequency electromagnetic methods: Spectral Induced Polarization (SIP: 20 kHz - 10 Hz), Capacively Coupled Resistivity (CCR: OhmMapper - 16.5 kHz), and DC Resistivity (Syscal ~ 8 Hz). At the Cold Regions Research and Engineering Laboratory permafrost tunnel near Fox, AK, we used SIP to measure the average ice concentration of 80 v% and determined the temperature to be -3±1°C by matching survey results to lab data. SIP data acquisition is very slow; therefore, at three sites near Tok, AK, we used CCR to perform reconnaissance of the area. Then SIP and DC resistivity were performed at anomalous areas. The three survey types give very similar absolute resistivity values. We found that while SIP gives the most quantitative results, the frequency dependence from the CCR and DC resistivity surveys is all that are needed to determine ice content in permafrost.

Evaluation of Temperature-Dependent Effective Material Properties and Performance of a Thermoelectric Module

NASA Astrophysics Data System (ADS)

Chien, Heng-Chieh; Chu, En-Ting; Hsieh, Huey-Lin; Huang, Jing-Yi; Wu, Sheng-Tsai; Dai, Ming-Ji; Liu, Chun-Kai; Yao, Da-Jeng

2013-07-01

We devised a novel method to evaluate the temperature-dependent effective properties of a thermoelectric module (TEM): Seebeck coefficient ( S m), internal electrical resistance ( R m), and thermal conductance ( K m). After calculation, the effective properties of the module are converted to the average material properties of a p- n thermoelectric pillar pair inside the module: Seebeck coefficient ( S TE), electrical resistivity ( ρ TE), and thermal conductivity ( k TE). For a commercial thermoelectric module (Altec 1091) chosen to verify the novel method, the measured S TE has a maximum value at bath temperature of 110°C; ρ TE shows a positive linear trend dependent on the bath temperature, and k TE increases slightly with increasing bath temperature. The results show the method to have satisfactory measurement performance in terms of practicability and reliability; the data for tests near 23°C agree with published values.

Temperature Dependent Electrical Transport Properties of Ni-Cr and Co-Cr Binary Alloys

NASA Astrophysics Data System (ADS)

Thakore, B. Y.; Suthar, P. H.; Khambholja, S. G.; Gajjar, P. N.; Bhatt, N. K.; Jani, A. R.

2011-12-01

The temperature dependent electrical transport properties viz. electrical resistivity and thermal conductivity of Ni10Cr90 and Co20Cr80 alloys are computed at various temperatures. The electrical resistivity has been calculated according to Faber-Ziman model combined with Ashcroft-Langreth partial structure factors. In the present work, to include the ion-electron interaction, we have used a well tested local model potential. For exchange-correlation effects, five different forms of local field correction functions due to Hartree (H), Taylor (T), Ichimaru and Utsumi (IU), Farid et al (F) and Sarkar et al (S) are used. The present results due to S function are in good agreement with the experimental data as compared to results obtained using other four functions. The S functions satisfy compressibility sum rule in long wave length limit more accurately as compared to T, IU and F functions, which may be responsible for better agreement of results, obtained using S function. Also, present result confirms the validity of present approach in determining the transport properties of alloys like Ni-Cr and Co-Cr.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bichevoi, V.G.; Kosolapova, M.M.; Kuchma, A.Ya.

The authors investigate the influence of thermal annealing in a constant electric field and also of the addition of TiO/sub 2/ to the initial material on the electrophysical properties (volt-Ampere characteristics and temperature dependence of resistance) of VK 94-1 ceramic. The kinetic characteristics of ceramic VK 94-1 are shown, as are the volt-ampere characteristics of unannealed ceramic VK 94-1. The temperature dependences of volumetric specific resistance of ceramic 94-1 both with and without TiO/sub 2/ are given.

Electrical properties of transparent conductive ATO coatings obtained by spray pyrolysis

NASA Astrophysics Data System (ADS)

Zinchenko, T. O.; Kondrashin, V. I.; Pecherskaya, E. A.; Kozlyakov, A. S.; Nikolaev, K. O.; Shepeleva, J. V.

2017-08-01

Transparent conductive coatings based on thin films of metal oxides have been widely spread in various optoelectronic devices and appliances. It is necessary to determine the influence of preparation conditions on coatings properties for their use in the solution of certain tasks. Thin films of tin dioxide were obtained by the method of spray pyrolysis on glass substrates. Surface resistance and resistivity, concentration and mobility of charge carriers, the conductivity were measured, and the dependences showing the effect of preparation conditions on electrical properties of optically transparent coatings.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

NASA Astrophysics Data System (ADS)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Simplified and quick electrical modeling for dye sensitized solar cells: An experimental and theoretical investigation

NASA Astrophysics Data System (ADS)

de Andrade, Rocelito Lopes; de Oliveira, Matheus Costa; Kohlrausch, Emerson Cristofer; Santos, Marcos José Leite

2018-05-01

This work presents a new and simple method for determining IPH (current source dependent on luminance), I0 (reverse saturation current), n (ideality factor), RP and RS, (parallel and series resistance) to build an electrical model for dye sensitized solar cells (DSSCs). The electrical circuit parameters used in the simulation and to generate theoretical curves for the single diode electrical model were extracted from I-V curves of assembled DSSCs. Model validation was performed by assembling five different types of DSSCs and evaluating the following parameters: effect of a TiO2 blocking/adhesive layer, thickness of the TiO2 layer and the presence of a light scattering layer. In addition, irradiance, temperature, series and parallel resistance, ideality factor and reverse saturation current were simulated.

The piezoresistive effect in graphene-based polymeric composites.

PubMed

Tamburrano, A; Sarasini, F; De Bellis, G; D'Aloia, A G; Sarto, M S

2013-11-22

The strain-dependent electrical resistance of polyvinyl ester-based composites filled with different weight fractions of graphene nanoplatelets (GNPs) has been experimentally investigated. The GNP synthesis and nanocomposite fabrication process have been optimized in order to obtain highly homogeneous filler dispersion and outstanding electrical properties. The produced nanocomposites showed a low percolation threshold of 0.226 wt% and electrical conductivity of nearly 10 S m(-1) at only 4 wt% of GNPs. The piezoresistive response of thin nanocomposite laminae has been assessed by measuring the variation of the electrical resistance as a function of the flexural strain in three-point bending tests under both quasi-static monotonic and dynamic cyclic loading conditions. The obtained results showed higher strain sensitivity than traditional metal foil strain gauges or recently investigated carbon-based nanocomposite films.

Footwear and flooring: charge generation in combination with a person as influenced by environmental moisture

NASA Astrophysics Data System (ADS)

Swenson, D. E.

2015-10-01

It is well known that a person walking on a floor will liberate electrostatic charge. The amount of charge that can be accumulated on a person by walking is dependent on many factors that are also well understood. Among these factors is the electrical resistance between a person and ground. The electrical resistance of footwear, other clothing, a person's skin resistance and the contact resistance between footwear and the floor impact the total resistance of the system. As important as measuring resistance may be as an evaluation method, it does not take into account triboelectric generation of charge. The recent revisions of ANSI/ESD S20.20[1] from the ESD Association and IEC61340-5-1[2] from IEC TC101 - Electrostatics, both include a dynamic walking test since experience in recent years has shown that resistance alone does not predict how a footwear and flooring system will actually perform. The USA group ASHRAE1, commissioned a study to evaluate electrostatic charge generation inside data centres as influenced by environmental moisture (relative and absolute humidity)[3][4]. The reason for this study is that past data centre operating guidelines have called for a very narrow range of temperature and humidity control, largely because of the anecdotal evidence that moderate to high RH impacts static electricity generation and accumulation. This results in a massive consumption of electricity to maintain a narrow window of temperature and environmental moisture. Broadening or eliminating humidity controls could result in a major saving of electricity and money.

A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

PubMed

Lu, Jing; Tu, Xinglong; Yin, Guilin; Wang, Hui; He, Dannong

2017-11-09

In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO 2 /Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO 2 , which has a resistivity in the range of 50-80 Ω∙cm. The I-V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We ascribe this dual dependence to the electric filed produced by the redistribution of photo-generated carriers, which enhance the internal barrier of the hetero-junction. A complete theoretical analysis based on junction current and diffusion equation is presented. The dependence of the switching voltage on spot laser illumination makes the n-type Mn-doped ZnO/SiO 2 /Si structure sensitive to light, which thus allows for the integration of an extra functionality in the ZnO-based photoelectric device.

Research of Influence of Noise Pollution on the Value of the Threshold Current Tangible

NASA Astrophysics Data System (ADS)

Khanzhina, Olga; Sidorov, Alexander; Zykina, Ekaterina

2017-12-01

Stable safety while working on electrical installations can be achieved by following the rules of the electrical safety. Today maximum permissible levels of touch voltage and electric current flow through any part of a person’s body are established by Russian Federation GOST system 12.1.038-82. Unfortunately, recommended by International Electrotechnical Commission (IEC) maximum allowable amount of electric current and voltage level do not take into account interaction between said electric current and other physical factors; noise, in particular. The influence of sound frequency and its pressure level on body resistance has been proven earlier in thesis by V.V. Katz. Studies of the noise effects on the value of the threshold current tangible have been renewed in laboratories of Life Safety Department in South Ural State University. To obtain reliable results, testing facility that includes anechoic chamber, sources of simulated voltages and noise and a set of recording instruments was designed and built. As a rule, noise influence on electrotechnical personnel varies depending on noise level or/and the duration of its impact. According to modern theories, indirect noise influence on various organs and systems through central nervous system has to be considered. Differential evaluation of noise pollution and its correlation with emerged effects can be obtained with the usage of the dose approach. First of all, there were conducted studies, in which frequency of the applied voltage (f) was to 50 Hz. Voltages and currents that caused sensations before and during 97 dB noise affections were measured. Obtained dependence led to questioning previous researches results of the necessity of reducing the amperage of tripping protection devices. At the same time electrical resistance changes of human body were being studied. According to those researches, no functional dependence between fluctuations in the magnitude of the resistance of human body to electric current flow and constant noise affection were found. Taking into account that contradiction, additional studies of primary electrical safety criteria for cases when exposed to high frequency noise pollution were conducted.

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Electric properties and carrier multiplication in breakdown sites in multi-crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneemann, Matthias; Carius, Reinhard; Rau, Uwe

2015-05-28

This paper studies the effective electrical size and carrier multiplication of breakdown sites in multi-crystalline silicon solar cells. The local series resistance limits the current of each breakdown site and is thereby linearizing the current-voltage characteristic. This fact allows the estimation of the effective electrical diameters to be as low as 100 nm. Using a laser beam induced current (LBIC) measurement with a high spatial resolution, we find carrier multiplication factors on the order of 30 (Zener-type breakdown) and 100 (avalanche breakdown) as new lower limits. Hence, we prove that also the so-called Zener-type breakdown is followed by avalanche multiplication. Wemore » explain that previous measurements of the carrier multiplication using thermography yield results higher than unity, only if the spatial defect density is high enough, and the illumination intensity is lower than what was used for the LBIC method. The individual series resistances of the breakdown sites limit the current through these breakdown sites. Therefore, the measured multiplication factors depend on the applied voltage as well as on the injected photocurrent. Both dependencies are successfully simulated using a series-resistance-limited diode model.« less

Constant electrical resistivity of Ni along the melting boundary up to 9 GPa

NASA Astrophysics Data System (ADS)

Silber, Reynold E.; Secco, Richard A.; Yong, Wenjun

2017-07-01

Characterization of transport properties of liquid Ni at high pressures has important geophysical implications for terrestrial planetary interiors, because Ni is a close electronic analogue of Fe and it is also integral to Earth's core. We report measurements of the electrical resistivity of solid and liquid Ni at pressures 3-9 GPa using a 3000 t multianvil large volume press. A four-wire method, in conjunction with a rapid acquisition meter and polarity switch, was used to overcome experimental challenges such as melt containment and maintaining sample geometry and to mitigate the extreme reactivity/solubility of liquid Ni with most thermocouple and electrode materials. Thermal conductivity is calculated using the Wiedemann-Franz law. Electrical resistivity of solid Ni exhibits the expected P dependence and is consistent with earlier experimental values. Within experimental uncertainties, our results indicate that resistivity of liquid Ni remains invariant along the P-dependent melting boundary, which is in disagreement with earlier prediction for liquid transition metals. The potential reasons for such behavior are examined qualitatively through the impact of P-independent local short-range ordering on electron mean free path and the possibility of constant Fermi surface at the onset of Ni melting. Correlation among metals obeying the Kadowaki-Woods ratio and the group of late transition metals with unfilled d-electron band displaying anomalously shallow melting curves suggests that on the melting boundary, Fe may exhibit the same resistivity behavior as Ni. This could have important implications for the heat flow in the Earth's core.

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

Near surface geophysical techniques on subsoil contamination: laboratory experiments

NASA Astrophysics Data System (ADS)

Capozzoli, Luigi; Giampaolo, Valeria; Rizzo, Enzo

2016-04-01

Hydrocarbons contamination of soil and groundwater has become a serious environmental problem, because of the increasing number of accidental spills caused by human activities. The starting point of any studies is the reconstruction of the conceptual site model. To make valid predictions about the flow pathways following by hydrocarbons compound is necessary to make a correct reconstruction of their characteristics and the environment in which they move. Near-surface geophysical methods, based on the study of electrical and electromagnetic properties, are proved to be very useful in mapping spatial distribution of the organic contaminants in the subsurface. It is well known, in fact, that electrical properties of the porous media are significantly influenced by hydrocarbons because, when contaminants enter the rock matrix, surface reaction occur between the contaminant and the soil grain surface. The main aim of this work is to investigate the capability of near-surface geophysical methods in mapping and monitoring spatial distribution of contaminants in a controlled setting. A laboratory experiment has been performed at the Hydrogeosite Laboratory of CNR-IMAA (Marsico Nuovo, PZ) where a box-sand has been contaminated by diesel. The used contaminant is a LNAPL, added to the sand through a drilled pipe. Contaminant behaviour and its migration paths have been monitored for one year by Electrical Resistivity measurements. In details, a Cross Borehole Electrical Resistivity Tomography techniques were used to characterize the contamination dynamics after a controlled hydrocarbon spillage occurring in the vadose zone. The approach with cross-borehole resistivity imaging provide a great advantage compared to more conventional surface electrical resistivity tomography, due to the high resolution at high depth (obviously depending on the depth of the well instrumented for the acquisition). This method has been shown to provide good information on the distribution of electrical properties of the subsoil at high depths and, in some cases, a detailed assessment of dynamic processes in the subsurface environment (Binley et al., 2002). Our study confirms the link between hydrocarbons contamination and geoelectrical signal and the capability of cross-hole electrical resistivity tomographies to realize a non-invasive characterization of LNAPL contamination of the media. Although, the electrical behaviour is much more complex and the relation with the contaminants depends also by time of investigation.

Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films

NASA Astrophysics Data System (ADS)

Panda, B.; Roy, A.; Dhar, A.; Ray, S. K.

2007-03-01

Polycrystalline Ba1-xSrxTiO3 (BST) thin films with three different compositions have been deposited by radio-frequency magnetron sputtering technique on platinum coated silicon substrates. Samples with buffer and barrier layers for different film thicknesses and processing temperatures have been studied. Crystallite size of BST films has been found to increase with increasing substrate temperature. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. Ferroelectric properties of the films have also been studied for various deposition conditions. The electrical resistivity of the films measured at different temperatures shows a positive temperature coefficient of resistance under a constant bias voltage.

Electrical resistance of single-crystal magnetite (Fe 3 O 4 ) under quasi-hydrostatic pressures up to 100 GPa

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muramatsu, Takaki; Gasparov, Lev V.; Berger, Helmuth

2016-04-07

We measured the pressure dependence of electrical resistance of single-crystal magnetite (Fe 3O 4) under quasi-hydrostatic conditions to 100 GPa using low-temperature, megabar diamond-anvil cell techniques in order to gain insight into the anomalous behavior of this material that has been reported over the years in different high-pressure experiments. The measurements under nearly hydrostatic pressure conditions allowed us to detect the clear Verwey transition and the high-pressure structural phase. Furthermore, the appearance of a metallic ground state after the suppression of the Verwey transition around 20 GPa and the concomitant enhancement of electrical resistance caused by the structural transformation tomore » the high-pressure phase form reentrant semiconducting-metallic-semiconducting behavior, though the appearance of the metallic phase is highly sensitive to stress conditions and details of the measurement technique.« less

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majid, S. S., E-mail: suhailphy276@gmail.com; Rahman, F.; Shukla, D. K.

2015-06-24

We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulatormore » transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.« less

Thermal Conductivity in Soil: Theoretical Approach by 3D Infinite Resistance Grid Model

NASA Astrophysics Data System (ADS)

Changjan, A.; Intaravicha, N.

2018-05-01

Thermal conductivity in soil was elementary characteristic of soil that conduct heat, measured in terms of Fourier’s Law for heat conduction and useful application in many fields: such as Utilizing underground cable for transmission and distribution systems, the rate of cooling of the cable depends on the thermal properties of the soil surrounding the cable. In this paper, we investigated thermal conductivity in soil by infinite three dimensions (3D) electrical resistance circuit concept. Infinite resistance grid 3D was the grid of resistors that extends to infinity in all directions. Model of thermal conductivity in soil of this research was generated from this concept: comparison between electrical resistance and thermal resistance in soil. Finally, we investigated the analytical form of thermal conductivity in soil which helpful for engineering and science students that could exhibit education with a principle of physics that applied to real situations.

Electrical and thermal behavior of unsaturated soils: experimental results

NASA Astrophysics Data System (ADS)

Nouveau, Marie; Grandjean, Gilles; Leroy, Philippe; Philippe, Mickael; Hedri, Estelle; Boukcim, Hassan

2016-05-01

When soil is affected by a heat source, some of its properties are modified, and in particular, the electrical resistivity due to changes in water content. As a result, these changes affect the thermal properties of soil, i.e., its thermal conductivity and diffusivity. We experimentally examine the changes in electrical resistivity and thermal conductivity for four soils with different grain size distributions and clay content over a wide range of temperatures, from 20 to 100 °C. This temperature range corresponds to the thermal conditions in the vicinity of a buried high voltage cable or a geothermal system. Experiments were conducted at the field scale, at a geothermal test facility, and in the laboratory using geophysical devices and probing systems. The results show that the electrical resistivity decreases and the thermal conductivity increases with temperature up to a critical temperature depending on soil types. At this critical temperature, the air volume in the pore space increases with temperature, and the resulting electrical resistivity also increases. For higher temperatures , the thermal conductivity increases sharply with temperature up to a second temperature limit. Beyond it, the thermal conductivity drops drastically. This limit corresponds to the temperature at which most of the water evaporates from the soil pore space. Once the evaporation is completed, the thermal conductivity stabilizes. To explain these experimental results, we modeled the electrical resistivity variations with temperature and water content in the temperature range 20 - 100°C, showing that two critical temperatures influence the main processes occurring during heating at temperatures below 100 °C.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

NASA Astrophysics Data System (ADS)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Conduction in In 2O 3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces

DOE PAGES

Veal, B. W.; Eastman, J. A.

2017-03-01

Thin film In 2O 3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In 2O 3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes inmore » the contact resistance.« less

Using resistive readout to probe ultrafast dynamics of a plasmonic sensor

NASA Astrophysics Data System (ADS)

Cheney, Alec; Chen, Borui; Cartwright, Alexander; Thomay, Tim

2018-02-01

Surface plasmons in a DC current lead to an increase in scattering processes, resulting in a measurable increase in electrical resistance of a plasmonic nano-grating. This enables a purely electronic readout of plasmonically mediated optical absorption. We show that there is a time-dependence in these resistance changes on the order of 100ps that we attribute to electron-phonon and phonon-phonon scattering processes in the metal of the nano-gratings. Since plasmonic responses are strongly structurally dependent, an appropriately designed plasmoelectronic detector could potentially offer an extremely fast response at communication wavelengths in a fully CMOS compatible system.

Electro-thermal analysis of contact resistance

NASA Astrophysics Data System (ADS)

Pandey, Nitin; Jain, Ishant; Reddy, Sudhakar; Gulhane, Nitin P.

2018-05-01

Electro-Mechanical characterization over copper samples are performed at the macroscopic level to understand the dependence of electrical contact resistance and temperature on surface roughness and contact pressure. For two different surface roughness levels of samples, six levels of load are selected and varied to capture the bulk temperature rise and electrical contact resistance. Accordingly, the copper samples are modelled and analysed using COMSOLTM as a simulation package and the results are validated by the experiments. The interface temperature during simulation is obtained using Mikic-Elastic correlation and by directly entering experimental contact resistance value. The load values are varied and then reversed in a similar fashion to capture the hysteresis losses. The governing equations & assumptions underlying these models and their significance are examined & possible justification for the observed variations are discussed. Equivalent Greenwood model is also predicted by mapping the results of the experiment.

The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

NASA Technical Reports Server (NTRS)

Littlejohn, M. A.; Anikara, R.

1972-01-01

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

Superconductivity at 52.5 K in the lanthanum-barium-copper-oxide system

NASA Technical Reports Server (NTRS)

Chu, C. W.; Hor, P. H.; Meng, R. L.; Gao, L.; Huang, Z. J.

1987-01-01

The electrical properties of the (La/0/9/Ba/0.1/)CuO/4-y/ system are examined under ambient and hydrostatic pressures. The resistance, ac magnetic susceptibility, and superconductivity onset, midpoint, and intercept temperatures are measured. It is observed that at ambient pressure the resistance decreases with temperature decreases, and the ac susceptibility shows diamagnetic shifts starting at about 32 K. Under hydrostatic pressure a superconducting transition with an onset temperature of 52.5 K is observed, and the resistance increases at lower temperatures. The data reveal that the electrical properties of the La-Ba-Cu-O system are dependent on samples and preparation conditions. Various causes for the high temperature superconductivity of the system are proposed.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2017-11-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2018-06-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Cell wall domain and moisture content influence southern pine electrical conductivity

Treesearch

Samuel L. Zelinka; Leandro Passarini; José L. Colon Quintana; Samuel V. Glass; Joseph E. Jakes; Alex C. Wiedenhoeft

2016-01-01

Recent work has highlighted the importance of movement of chemicals and ions through the wood cell wall. This movement depends strongly on moisture content and is necessary for structural damage mechanisms such as fastener corrosion and wood decay. Here, we present the first measurements of electrical resistance of southern pine at the subcellular level as a function...

Transient Electromagnetic Wave Propagation in a Plasma Waveguide

DTIC Science & Technology

2011-10-24

dielectric. The calculation of the propagation characteristics is based upon tangential continuity of the electric and magnetic field components...filament as a time-dependent resistance , we have determined the electron density, the kinetic parameters for electron attachment and recombination, and...wall conductivity simplifies the imposition of the boundary conditions. The tangential component of the electric field and the normal component of the

Temperature Dependent Electrical Transport Properties of Ni-Cr and Co-Cr Binary Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thakore, B. Y.; Khambholja, S. G.; Bhatt, N. K.

2011-12-12

The temperature dependent electrical transport properties viz. electrical resistivity and thermal conductivity of Ni{sub 10}Cr{sub 90} and Co{sub 20}Cr{sub 80} alloys are computed at various temperatures. The electrical resistivity has been calculated according to Faber-Ziman model combined with Ashcroft-Langreth partial structure factors. In the present work, to include the ion-electron interaction, we have used a well tested local model potential. For exchange-correlation effects, five different forms of local field correction functions due to Hartree (H), Taylor (T), Ichimaru and Utsumi (IU), Farid et al (F) and Sarkar et al (S) are used. The present results due to S function aremore » in good agreement with the experimental data as compared to results obtained using other four functions. The S functions satisfy compressibility sum rule in long wave length limit more accurately as compared to T, IU and F functions, which may be responsible for better agreement of results, obtained using S function. Also, present result confirms the validity of present approach in determining the transport properties of alloys like Ni-Cr and Co-Cr.« less

Hyperexcitability to electrical stimulation and accelerated muscle fatiguability of taut bands in rats.

PubMed

Wang, Yong-Hui; Yin, Ming-Jing; Fan, Zhen-Zhen; Arendt-Nielsen, Lars; Ge, Hong-You; Yue, Shou-Wei

2014-04-01

Myofascial trigger points contribute significantly to musculoskeletal pain and motor dysfunction and may be associated with accelerated muscle fatiguability. The aim of this study was to investigate the electrically induced force and fatigue characteristics of muscle taut bands in rats. Muscle taut bands were dissected out and subjected to trains of electrical stimulation. The electrical threshold intensity for muscle contraction and maximum contraction force (MCF), electrical intensity dependent fatigue and electrical frequency dependent fatigue characteristics were assessed in three different sessions (n=10 each) and compared with non-taut bands in the biceps femoris muscle. The threshold intensity for muscle contraction and MCF at the 10th, 15th and 20th intensity dependent fatigue stimuli of taut bands were significantly lower than those of non-taut bands (all p<0.05). The MCF at the 15th and 20th intensity dependent fatigue stimuli of taut bands were significantly lower than those at the 1st and 5th stimuli (all p<0.01). The MCF in the frequency dependent fatigue test was significantly higher and the stimulus frequency that induced MCF was significantly lower for taut bands than for non-taut bands (both p<0.01). The present study demonstrates that the muscle taut band itself was more excitable to electrical stimulation and significantly less fatigue resistant than normal muscle fibres.

A load-lock compatible system for in situ electrical resistivity measurements during thin film growth.

PubMed

Colin, J J; Diot, Y; Guerin, Ph; Lamongie, B; Berneau, F; Michel, A; Jaouen, C; Abadias, G

2016-02-01

An experimental setup designed for in situ electrical resistance measurement during thin film growth is described. The custom-built sample holder with a four-point probe arrangement can be loaded into a high-vacuum magnetron sputter-deposition chamber through a load-lock transfer system, allowing measurements on series of samples without venting the main chamber. Electrical contact is ensured with circular copper tracks inserted in a Teflon plate on a mounting holder station inside the deposition chamber. This configuration creates the possibility to measure thickness-dependent electrical resistance changes with sub-monolayer resolution and is compatible with use of sample rotation during growth. Examples are presented for metallic films with high adatom mobility growing in a Volmer-Weber mode (Ag and Pd) as well as for refractory metal (Mo) with low adatom mobility. Evidence for an amorphous-to-crystalline phase transition at a film thickness of 2.6 nm is reported during growth of Mo on an amorphous Si underlayer, supporting previous findings based on in situ wafer curvature measurements.

New pathway for the formation of metallic cubic phase Ge-Sb-Te compounds induced by an electric current

PubMed Central

Park, Yong-Jin; Cho, Ju-Young; Jeong, Min-Woo; Na, Sekwon; Joo, Young-Chang

2016-01-01

The novel discovery of a current-induced transition from insulator to metal in the crystalline phase of Ge2Sb2Te5 and GeSb4Te7 have been studied by means of a model using line-patterned samples. The resistivity of cubic phase Ge-Sb-Te compound was reduced by an electrical current (~1 MA/cm2), and the final resistivity was determined based on the stress current density, regardless of the initial resistivity and temperature, which indicates that the conductivity of Ge-Sb-Te compound can be modulated by an electrical current. The minimum resistivity of Ge-Sb-Te materials can be achieved at high kinetic rates by applying an electrical current, and the material properties change from insulating to metallic behavior without a phase transition. The current-induced metal transition is more effective in GeSb4Te7 than Ge2Sb2Te5, which depends on the intrinsic vacancy of materials. Electromigration, which is the migration of atoms induced by a momentum transfer from charge carriers, can easily promote the rearrangement of vacancies in the cubic phase of Ge-Sb-Te compound. This behavior differs significantly from thermal annealing, which accompanies a phase transition to the hexagonal phase. This result suggests a new pathway for modulating the electrical conductivity and material properties of chalcogenide materials by applying an electrical current. PMID:26902593

Electronic transport properties of intermediately coupled superconductors: PdTe2 and Cu0.04PdTe2

NASA Astrophysics Data System (ADS)

Hooda, M. K.; Yadav, C. S.

2018-01-01

We have investigated the electrical resistivity (1.8-480 K), Seebeck coefficient (2.5-300 K) and thermal conductivity (2.5-300 K) of PdTe2 and 4% Cu intercalated PdTe2 compounds. The electrical resistivity for the compounds shows a Bloch-Gruneisen-type linear temperature (T) dependence for 100 \\text{K}, and Fermi liquid behavior (ρ (T) \\propto T2) for T<50 \\text{K} . Seebeck coefficient data exhibit a strong competition between Normal (N) and Umklapp (U) scattering processes at low T. The low-T, thermal conductivity (κ) of the compounds is strongly dominated by the electronic contribution, and exhibits a rare linear T-dependence below 10 K. However, high-T, κ (T) shows the usual 1/T -dependence, dominated by the U-scattering process. The electron-phonon coupling parameters, estimated from the low-T, specific-heat data and first-principle electronic structure calculations suggest that PdTe2 and Cu0.04PdTe2 are intermediately coupled superconductors.

A new computer-aided simulation model for polycrystalline silicon film resistors

NASA Astrophysics Data System (ADS)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

The advantages of complementing MT profiles in 3-D environments with geomagnetic transfer function and interstation horizontal magnetic transfer function data: results from a synthetic case study

NASA Astrophysics Data System (ADS)

Campanyà, Joan; Ogaya, Xènia; Jones, Alan G.; Rath, Volker; Vozar, Jan; Meqbel, Naser

2016-12-01

As a consequence of measuring time variations of the electric and the magnetic field, which are related to current flow and charge distribution, magnetotelluric (MT) data in 2-D and 3-D environments are not only sensitive to the geoelectrical structures below the measuring points but also to any lateral anomalies surrounding the acquisition site. This behaviour complicates the characterization of the electrical resistivity distribution of the subsurface, particularly in complex areas. In this manuscript we assess the main advantages of complementing the standard MT impedance tensor (Z) data with interstation horizontal magnetic tensor (H) and geomagnetic transfer function (T) data in constraining the subsurface in a 3-D environment beneath a MT profile. Our analysis was performed using synthetic responses with added normally distributed and scattered random noise. The sensitivity of each type of data to different resistivity anomalies was evaluated, showing that the degree to which each site and each period is affected by the same anomaly depends on the type of data. A dimensionality analysis, using Z, H and T data, identified the presence of the 3-D anomalies close to the profile, suggesting a 3-D approach for recovering the electrical resistivity values of the subsurface. Finally, the capacity for recovering the geoelectrical structures of the subsurface was evaluated by performing joint inversion using different data combinations, quantifying the differences between the true synthetic model and the models from inversion process. Four main improvements were observed when performing joint inversion of Z, H and T data: (1) superior precision and accuracy at characterizing the electrical resistivity values of the anomalies below and outside the profile; (2) the potential to recover high electrical resistivity anomalies that are poorly recovered using Z data alone; (3) improvement in the characterization of the bottom and lateral boundaries of the anomalies with low electrical resistivity; and (4) superior imaging of the horizontal continuity of structures with low electrical resistivity. These advantages offer new opportunities for the MT method by making the results from a MT profile in a 3-D environment more convincing, supporting the possibility of high-resolution studies in 3-D areas without expending a large amount of economical and computational resources, and also offering better resolution of targets with high electrical resistivity.

Efros-Shklovskii variable range hopping and nonlinear transport in 1 T /1 T'-MoS2

NASA Astrophysics Data System (ADS)

Papadopoulos, N.; Steele, G. A.; van der Zant, H. S. J.

2017-12-01

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n -butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.

Influence of Al3+ substitution on the electrical resistivity and dielectric behavior of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites synthesized by solid state reaction technique

NASA Astrophysics Data System (ADS)

Rahman, K. R.; Chowdhury, F.-U.-Z.; Khan, M. N. I.

2017-12-01

In this paper, the effect of Al3+ substitution on the electrical and dielectric properties of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites with x = 0.0, 0.05. 0.10, 0.15 and 0.20, synthesized by solid state reaction has been reported. Using two probe method, the DC resistivity has been investigated in the temperature range from 30 °C to 300 °C. Activation energy was calculated from the Arrhenius plot. The electrical conduction is explained on the basis of the hopping mechanism. The frequency dependent dielectric properties of these spinel ferrites have been studied at room temperature by measuring AC resistivity, conductivity (σac), dielectric constant and dielectric loss tangent (tan δ) in the frequency range between 1 kHz and 120 MHz. The study of dielectric properties showed that the dielectric constant and dielectric loss increased with increasing non-magnetic Al ions. The dependence of dielectric constant with frequency has been explained by Maxwell-Wagner interfacial polarization. Cole-Cole plots show semicircular arc(s) for the samples, and equivalent RC circuits have been proposed to clarify the phenomena involved therein. The analysis of complex impedance spectroscopy has been used to distinguish between the grain and grain boundary contribution to the total resistance.

Passively Damped Laminated Piezoelectric Shell Structures with Integrated Electric Networks

NASA Technical Reports Server (NTRS)

Saravanos, Dimitris A.

1999-01-01

Multi-field mechanics are presented for curvilinear piezoelectric laminates interfaced with distributed passive electric components. The equations of motion for laminated piezoelectric shell structures with embedded passive electric networks are directly formulated and solved using a finite element methodology. The modal damping and frequencies of the piezoelectric shell are calculated from the poles of the system. Experimental and numerical results are presented for the modal damping and frequency of composite beams with a resistively shunted piezoceramic patch. The modal damping and frequency of plates, cylindrical shells and cylindrical composite blades with piezoelectric-resistor layers are predicted. Both analytical and experimental studies illustrate a unique dependence of modal damping and frequencies on the shunting resistance and show the effect of structural shape and curvature on piezoelectric damping.

Electrical transport in AZO nanorods

NASA Astrophysics Data System (ADS)

Yildiz, A.; Cansizoglu, H.; Karabacak, T.

2015-10-01

Al-doped ZnO (AZO) nanorods (NRs) with different lengths were deposited by utilizing glancing angle deposition (GLAD) technique in a DC sputter system at room temperature. The structural and optical characteristics of the NRs were investigated by the X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis-NIR spectroscopy measurements. A band gap of about 3.5 eV was observed for the NRs. A novel capping process utilizing varying deposition angles was used to introduce a blanket metal top contact for the electrical characterization of NRs. Current-voltage (I-V) measurements were used to properly evaluate the approximate resistivity of a single NR. The electrical conduction was found to be governed by the thermally activated transport mechanism. Activation energy was determined as 0.14 eV from temperature dependent resistivity data.

MPPT Algorithm Development for Laser Powered Surveillance Camera Power Supply Unit

NASA Astrophysics Data System (ADS)

Zhang, Yungui; Dushantha Chaminda, P. R.; Zhao, Kun; Cheng, Lin; Jiang, Yi; Peng, Kai

2018-03-01

Photovoltaics (PV) cells, modules which are semiconducting materials, convert light energy into electricity. Operation of a PV cell requires 3 basic features. When the light is absorbed it generate pairs of electron holes or excitons. An external circuit carrier opposite types of electrons irrespective of the source (sunlight or LASER light). The PV arrays have photovoltaic effect and the PV cells are defined as a device which has electrical characteristics: such as current, voltage and resistance. It varies when exposed to light, that the power output is depend on direct Laser-light. In this paper Laser-light to electricity by direct conversion with the use of PV cells and its concept of Band gap Energy, Series Resistance, Conversion Efficiency and Maximum Power Point Tracking (MPPT) methods [1].

Pressure dependence of the electrical properties of GaBi solidified in low gravity

NASA Technical Reports Server (NTRS)

Wu, M. K.; Ashburn, J. R.; Torng, C. J.; Curreri, P. A.; Chu, C. W.

1987-01-01

Immiscible GaBi alloys were solidified during free fall in the NASA Marshall Space Flight Center drop tower, which provides about 4.5 seconds of low gravity. The electrical resistivity and magnetic susceptibility were measured as a function of pressure (up to 18 kbar) and temperature (300 K to 4.2 K) of drop tower (DT) and ground control (GC) samples prepared under identical conditions, except for gravity. At ambient pressure the electrical resistance of the DT sample exhibits a broad maximum at 100 K, while that of GC sample decreases rapidly as temperature decreases. Both DT and GC samples become superconducting at 7.7 K. However, a minor second superconducting phase with a transition temperature at 8.3 K is observed only in the DT samples.

Rapid changes in the electrical state of the 1999 Izmit earthquake rupture zone

PubMed Central

Honkura, Yoshimori; Oshiman, Naoto; Matsushima, Masaki; Barış, Şerif; Kemal Tunçer, Mustafa; Bülent Tank, Sabri; Çelik, Cengiz; Çiftçi, Elif Tolak

2013-01-01

Crustal fluids exist near fault zones, but their relation to the processes that generate earthquakes, including slow-slip events, is unclear. Fault-zone fluids are characterized by low electrical resistivity. Here we investigate the time-dependent crustal resistivity in the rupture area of the 1999 Mw 7.6 Izmit earthquake using electromagnetic data acquired at four sites before and after the earthquake. Most estimates of apparent resistivity in the frequency range of 0.05 to 2.0 Hz show abrupt co-seismic decreases on the order of tens of per cent. Data acquired at two sites 1 month after the Izmit earthquake indicate that the resistivity had already returned to pre-seismic levels. We interpret such changes as the pressure-induced transition between isolated and interconnected fluids. Some data show pre-seismic changes and this suggests that the transition is associated with foreshocks and slow-slip events before large earthquakes. PMID:23820970

Improvement of the Reliability of Dielectrics for MLCC

NASA Astrophysics Data System (ADS)

Nakamura, Tomoyuki; Yao, Takayuki; Ikeda, Jun; Kubodera, Noriyuki; Takagi, Hiroshi

2011-10-01

To achieve enough reliability of monolithic ceramic capacitor, it is important to know the contribution of grain boundary and grain interior to its reliability and insulation resistance. As the number of grain boundaries per layer increased, mean time to failure (MTTF) increased. In addition, as the number of grain boundaries per layer increased, samples showed lower current leakage in the measured electric field range. Using these data, the grain boundary E-J curves were determined by simulation. As a result, temperature and electric field dependence of insulation resistance of grain boundary were very low. The insulation characteristics of one BaTiO3 grain per layer were examined. The resistance and reliability of grain interior were very low. To improve the degradation resistance of grain interior, Ca-doped BaTiO3-based dielectrics were developed. The influence of Ca substitution on MTTF was investigated and it was found out that MTTF increased with the increase of Ca substitution.

Correlation between electrical direct current resistivity and plasmonic properties of CMOS compatible titanium nitride thin films.

PubMed

Viarbitskaya, S; Arocas, J; Heintz, O; Colas-Des-Francs, G; Rusakov, D; Koch, U; Leuthold, J; Markey, L; Dereux, A; Weeber, J-C

2018-04-16

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ellipsometry experiments. By probing a parametric space of realistic values for parameters of the Drude model, we obtain a nearly univocal dependence of the surface plasmon damping distance on the dc resistivity demonstrating the relevance of dc resistivity for the evaluation of the plasmonic performances of TiN at telecom frequencies. Finally, we show that better plasmonic performances are obtained for TiN films featuring a low content of oxygen. For low oxygen content and corresponding low resistivity, we attribute the increase of the surface plasmon damping distances to a lower confinement of the plasmon field into the metal and not to a decrease of the absorption of TiN.

Temperature Dependent Resistivity and Hall Effect in Proton Irradiated CdS Thin Films

NASA Astrophysics Data System (ADS)

Guster, B.; Ghenescu, V.; Ion, L.; Radu, A.; Porumb, O.; Antohe, S.

2011-10-01

Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. In particular, CdS thin films are suitable for use as windows in heterojunction solar cells that employ CdTe, Cu2S or CuInSe2 as an absorber. Such thin film based solar cells are well suited for use in space technology. For that specific application, it is important to know how ionizing radiations alter their performance. We have investigated the effects of irradiation with high energy protons (3 MeV), at 1014 fluency, on electrical properties of polycrystalline CdS thin layers. The samples were prepared by thermal vacuum deposition from single source onto optical glass substrate. Temperature dependent electrical resistivity and Hall effect, before and after irradiation, were recorded from 300 K down to 4 K. The experimental results can be explained in the frame of a two-band model. Above 100 K electrical properties are controlled by a defect level of donor type, with an ionization energy of about 0.060 eV. The possible origin of this defect is discussed.

Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

NASA Astrophysics Data System (ADS)

Zhang, Shumao; Kuo, Yue

2018-03-01

Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

NASA Astrophysics Data System (ADS)

Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

2018-03-01

Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alves, L. M. S., E-mail: leandro-fisico@hotmail.com; Lima, B. S. de; Santos, C. A. M. dos

K{sub 0.05}MoO{sub 2} has been studied by x-ray and neutron diffractometry, electrical resistivity, magnetization, heat capacity, and thermal expansion measurements. The compound displays two phase transitions, a first-order phase transition near room temperature and a second-order transition near 54 K. Below the transition at 54 K, a weak magnetic anomaly is observed and the electrical resistivity is well described by a power-law temperature dependence with exponent near 0.5. The phase transitions in the K-doped MoO{sub 2} compound have been discussed for the first time using neutron diffraction, high resolution thermal expansion, and heat capacity measurements as a function of temperature.

Analysis and comparison of magnetic sheet insulation tests

NASA Astrophysics Data System (ADS)

Marion-Péra, M. C.; Kedous-Lebouc, A.; Cornut, B.; Brissonneau, P.

1994-05-01

Magnetic circuits of electrical machines are divided into coated sheets in order to limit eddy currents. The surface insulation resistance of magnetic sheets is difficult to evaluate because it depends on parameters like pressure and covers a wide range of values. Two methods of measuring insulation resistance are analyzed: the standardized 'Franklin device' and a tester developed by British Steel Electrical. Their main drawback is poor local repeatability. The Franklin method allows better quality control of industrial process because it measures only one insulating layer at a time. It also gives more accurate images of the distribution of possible defects. Nevertheless, both methods lead to similar classifications of insulation efficiency.

ELECTRIC PHASE ANGLE OF CELL MEMBRANES

PubMed Central

Cole, Kenneth S.

1932-01-01

From the theory of an electric network containing any combination of resistances and a single variable impedance element having a constant phase angle independent of frequency, it is shown that the graph of the terminal series reactance against the resistance is an arc of a circle with the position of the center depending upon the phase angle of the variable element. If it be assumed that biological systems are equivalent to such a network, the hypotheses are supported at low and intermediate frequencies by data on red blood cells, muscle, nerve, and potato. For some tissues there is a marked divergence from the circle at high frequencies, which is not interpreted. PMID:19872673

A study of the electrical properties of complex resistor network based on NW model

NASA Astrophysics Data System (ADS)

Chang, Yunfeng; Li, Yunting; Yang, Liu; Guo, Lu; Liu, Gaochao

2015-04-01

The power and resistance of two-port complex resistor network based on NW small world network model are studied in this paper. Mainly, we study the dependence of the network power and resistance on the degree of port vertices, the connection probability and the shortest distance. Qualitative analysis and a simplified formula for network resistance are given out. Finally, we define a branching parameter and give out its physical meaning in the analysis of complex resistor network.

Effect of praseodymium on the electrical resistance of YВа2Сu3О7-δ single crystals

NASA Astrophysics Data System (ADS)

Vovk, R. V.; Vovk, N. R.; Khadzhai, G. Ya.; Goulatis, I. L.; Chroneos, A.

2014-07-01

The electrical resistivity in the ab-plane of the Y1-yPryВа2Сu3О7-δ single crystals with high degree of perfection in the interval of Тc - 300 K was investigated. The increasing of praseodymium content leads to the reduction of the critical temperature (Tc) from 92 to 30 K. The experimental results can be approximated by the expression, taking into account the scattering of electrons by phonons, defects, the fluctuation conductivity in the 3D Aslamazov-Larkin model, as well as the transition to a "semiconductor" type behavior of the resistivity at the high praseodymium concentrations. The concentration dependences of all fitting parameters indicate a structural transition in the region 0.35≤у≤0.43. In particular, the Debye temperature changes in this range from 350 to 550 K, and the transverse coherence length passes through a maximum ξС(0)≈5 Å. The concentration dependence of the critical temperature testifies the d-pairing of the BCS model.

Electrical transport properties in Co nanocluster-assembled granular film

NASA Astrophysics Data System (ADS)

Zhang, Qin-Fu; Wang, Lai-Sen; Wang, Xiong-Zhi; Zheng, Hong-Fei; Liu, Xiang; Xie, Jia; Qiu, Yu-Long; Chen, Yuanzhi; Peng, Dong-Liang

2017-03-01

A Co nanocluster-assembled granular film with three-dimensional cross-connection paralleled conductive paths was fabricated by using the plasma-gas-condensation method in a vacuum environment. The temperature-dependent longitudinal resistivity and anomalous Hall effect of this new type granular film were systematically studied. The longitudinal resistivity of the Co nanocluster-assembled granular film first decreased and then increased with increasing measuring temperature, revealing a minimum value at certain temperature, T min . In a low temperature region ( T < T min ), the barrier between adjacent nanoclusters governed the electrical transport process, and the temperature coefficient of resistance (TCR) showed an insulator-type behavior. The thermal fluctuation-induced tunneling conduction progressively increased with increasing temperature, which led to a decrease in the longitudinal resistivity. In a high temperature region, the TCR showed a metallic-type behavior, which was primarily attributed to the temperature-dependent scattering. Different from the longitudinal resistivity behavior, the saturated anomalous Hall resistivity increased monotonically with increasing measuring temperature. The value of the anomalous Hall coefficient ( R S ) reached 2.3 × 10-9 (Ω cm)/G at 300 K, which was about three orders of magnitude larger than previously reported in blocky single-crystal Co [E. N. Kondorskii, Sov. Phys. JETP 38, 977 (1974)]. Interestingly, the scaling relation ( ρx y A ∝ ρx x γ ) between saturated anomalous Hall resistivity ( ρx y A ) and longitudinal resistivity ( ρ x x ) was divided into two regions by T min . However, after excluding the contribution of tunneling, the scaling relation followed the same rule. The corresponding physical mechanism was also proposed to explain these phenomena.

A Comparison of Methods for Computing the Residual Resistivity Ratio of High-Purity Niobium

PubMed Central

Splett, J. D.; Vecchia, D. F.; Goodrich, L. F.

2011-01-01

We compare methods for estimating the residual resistivity ratio (RRR) of high-purity niobium and investigate the effects of using different functional models. RRR is typically defined as the ratio of the electrical resistances measured at 273 K (the ice point) and 4.2 K (the boiling point of helium at standard atmospheric pressure). However, pure niobium is superconducting below about 9.3 K, so the low-temperature resistance is defined as the normal-state (i.e., non-superconducting state) resistance extrapolated to 4.2 K and zero magnetic field. Thus, the estimated value of RRR depends significantly on the model used for extrapolation. We examine three models for extrapolation based on temperature versus resistance, two models for extrapolation based on magnetic field versus resistance, and a new model based on the Kohler relationship that can be applied to combined temperature and field data. We also investigate the possibility of re-defining RRR so that the quantity is not dependent on extrapolation. PMID:26989580

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Presa, S., E-mail: silvino.presa@tyndall.ie; School of Engineering, University College Cork, Cork; Maaskant, P. P.

We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thickermore » barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs.« less

Review: Some low-frequency electrical methods for subsurface characterization and monitoring in hydrogeology

NASA Astrophysics Data System (ADS)

Revil, A.; Karaoulis, M.; Johnson, T.; Kemna, A.

2012-06-01

Low-frequency geoelectrical methods include mainly self-potential, resistivity, and induced polarization techniques, which have potential in many environmental and hydrogeological applications. They provide complementary information to each other and to in-situ measurements. The self-potential method is a passive measurement of the electrical response associated with the in-situ generation of electrical current due to the flow of pore water in porous media, a salinity gradient, and/or the concentration of redox-active species. Under some conditions, this method can be used to visualize groundwater flow, to determine permeability, and to detect preferential flow paths. Electrical resistivity is dependent on the water content, the temperature, the salinity of the pore water, and the clay content and mineralogy. Time-lapse resistivity can be used to assess the permeability and dispersivity distributions and to monitor contaminant plumes. Induced polarization characterizes the ability of rocks to reversibly store electrical energy. It can be used to image permeability and to monitor chemistry of the pore water-minerals interface. These geophysical methods, reviewed in this paper, should always be used in concert with additional in-situ measurements (e.g. in-situ pumping tests, chemical measurements of the pore water), for instance through joint inversion schemes, which is an area of fertile on-going research.

Memory Device and Nanofabrication Techniques Using Electrically Configurable Materials

NASA Astrophysics Data System (ADS)

Ascenso Simões, Bruno

Development of novel nanofabrication techniques and single-walled carbon nanotubes field configurable transistor (SWCNT-FCT) memory devices using electrically configurable materials is presented. A novel lithographic technique, electric lithography (EL), that uses electric field for pattern generation has been demonstrated. It can be used for patterning of biomolecules on a polymer surface and patterning of resist as well. Using electrical resist composed of a polymer having Boc protected amine group and iodonium salt, Boc group on the surface of polymer was modified to free amine by applying an electric field. On the modified surface of the polymer, Streptavidin pattern was fabricated with a sub-micron scale. Also patterning of polymer resin composed of epoxy monomers and diaryl iodonium salt by EL has been demonstrated. Reaction mechanism for electric resist configuration is believed to be induced by an acid generation via electrochemical reduction in the resist. We show a novel field configurable transistor (FCT) based on single-walled carbon nanotube network field-effect transistors in which poly (ethylene glycol) crosslinked by electron-beam is incorporated into the gate. The device conductance can be configured to arbitrary states reversibly and repeatedly by applying external gate voltages. Raman spectroscopy revealed that evolution of the ratio of D- to G-band intensity in the SWCNTs of the FCT progressively increases as the device is configured to lower conductance states. Electron transport studies at low temperatures showed a strong temperature dependence of the resistance. Band gap widening of CNTs up to ˜ 4 eV has been observed by examining the differential conductance-gate voltage-bias voltage relationship. The switching mechanism of the FCT is attributed a structural transformation of CNTs via reversible hydrogenation and dehydrogenations induced by gate voltages, which tunes the CNT bandgap continuously and reversibly to non-volatile analog values. The CNT transistors with field tunable band gaps would facilitate field programmable circuits based on the self-organized CNTs, and might also lead to novel analog memory, neuromorphic, and photonic devices.

Electrical characterization of FIB processed metal layers for reliable conductive-AFM on ZnO microstructures

NASA Astrophysics Data System (ADS)

Pea, M.; Maiolo, L.; Giovine, E.; Rinaldi, A.; Araneo, R.; Notargiacomo, A.

2016-05-01

We report on the conductive-atomic force microscopy (C-AFM) study of metallic layers in order to find the most suitable configuration for electrical characterization of individual ZnO micro-pillars fabricated by focused ion beam (FIB). The electrical resistance between the probe tip and both as deposited and FIB processed metal layers (namely, Cr, Ti, Au and Al) has been investigated. Both chromium and titanium evidenced a non homogenous and non ohmic behaviour, non negligible scanning probe induced anodic oxidation associated to electrical measurements, and after FIB milling they exhibited significantly higher tip-sample resistance. Aluminium had generally a more apparent non conductive behaviour. Conversely, gold films showed very good tip-sample conduction properties being less sensitive to FIB processing than the other investigated metals. We found that a reliable C-AFM electrical characterization of ZnO microstructures obtained by FIB machining is feasible by using a combination of metal films as top contact layer. An Au/Ti bilayer on top of ZnO was capable to sustain the FIB fabrication process and to form a suitable ohmic contact to the semiconductor, allowing for reliable C-AFM measurement. To validate the consistency of this approach, we measured the resistance of ZnO micropillars finding a linear dependence on the pillar height, as expected for an ohmic conductor, and evaluated the resistivity of the material. This procedure has the potential to be downscaled to nanometer size structures by a proper choice of metal films type and thickness.

Decreasing electrical resistivity of silver along the melting boundary up to 5 GPa

NASA Astrophysics Data System (ADS)

Littleton, Joshua A. H.; Secco, Richard A.; Yong, Wenjun

2018-04-01

The electrical resistivity of Ag was experimentally measured at high pressures up to 5 GPa and at temperatures up to ∼300 K above melting. The resistivity decreased as a function of pressure and increased as a function of temperature as expected and is in very good agreement with 1 atm data. Observed melting temperatures at high pressures also agree well with previous experimental and theoretical studies. The main finding of this study is that resistivity of Ag decreases along the pressure- and temperature-dependent melting boundary, in conflict with prediction of resistivity invariance. This result is discussed in terms of the dominant contribution of the increasing energy separation between the Fermi level and 4d-band as a function of pressure. Calculated from the resistivity using the Wiedemann-Franz law, the electronic thermal conductivity increased as a function of pressure and decreased as a function of temperature as expected. The decrease in the high pressure thermal conductivity in the liquid phase as a function of temperature contrasts with the behavior of the 1 atm data.

Effect of charge ordering and phase separation on the electrical and magnetoresistive properties of polycrystalline La0.4Eu0.1Ca0.5MnO3

NASA Astrophysics Data System (ADS)

Krichene, A.; Boujelben, W.; Mukherjee, S.; Shah, N. A.; Solanki, P. S.

2018-03-01

We have investigated the effect of charge ordering and phase separation on the electrical and magnetotransport properties of La0.4Eu0.1Ca0.5MnO3 polycrystalline sample. Temperature dependence of resistivity shows a metal-insulator transition at transition temperature Tρ. A hysteretic behavior is observed for zero field resistivity curves with Tρ = 128 K on cooling process and Tρ = 136 K on warming process. Zero field resistivity curves follow Zener polynomial law in the metallic phase with unusual n exponent value ∼9. Presence of resistivity minimum at low temperatures has been ascribed to the coulombic electron-electron scattering process. Resistivity modification due to the magnetic field cycling testifies the presence of the training effect. Magnetization and resistivity appear to be highly correlated. Magnetoresistive study reveals colossal values of negative magnetoresistance reaching about 75% at 132 K under only 2T applied field. Colossal values of magnetoresistance suggest the possibility of using this sample for magnetic field sensing and spintronic applications.

Noncontact technique for measuring the electrical resistivity and magnetic susceptibility of electrostatically levitated materials

NASA Astrophysics Data System (ADS)

Rustan, G. E.; Spyrison, N. S.; Kreyssig, A.; Prozorov, R.; Goldman, A. I.

2012-10-01

We describe the development of a new method for measuring the electrical resistivity and magnetic susceptibility of high temperature liquids and solids. The technique combines a tunnel diode oscillator with an electrostatic levitation furnace to perform noncontact measurements on spherical samples 2-3 mm in diameter. The tank circuit of the oscillator is inductively coupled to the sample, and measurements of the oscillator frequency as a function of sample temperature can be translated into changes in the sample's electrical resistivity and magnetic susceptibility. Particular emphasis is given on the need to improve the positional stability of the levitated samples, as well as the need to stabilize the temperature of the measurement coil. To demonstrate the validity of the technique, measurements have been performed on solid spheres of pure zirconium and low-carbon steel. In the case of zirconium, while absolute values of the resistivity were not determined, the temperature dependence of the resistivity was measured over the range of 640-1770 K and found to be in good agreement with literature data. In the case of low-carbon steel, the ferromagnetic-paramagnetic transition was clearly observable and, when combined with thermal data, appears to occur simultaneously with the solid-solid structural transition.

Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide

NASA Astrophysics Data System (ADS)

Guo, D. Y.; Qian, Y. P.; Su, Y. L.; Shi, H. Z.; Li, P. G.; Wu, J. T.; Wang, S. L.; Cui, C.; Tang, W. H.

2017-06-01

The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature. The high conductive gallium oxide films deposited at low temperature are amorphous, non-stoichiometric, and rich in oxygen vacancy. Large changes in electrical resistance are observed in these non-stoichiometric thin films. The wide variety of hysteretic shapes in the I-V curves depend on the voltage-sweep rate, evidencing that the time-dependent redistribution of oxygen vacancy driven by bias is the controlling parameter for the resistance of gallium oxide.

Electrical, structural and morphological properties of chemically sprayed F-doped ZnO films: effect of the ageing-time of the starting solution, solvent and substrate temperature

NASA Astrophysics Data System (ADS)

Guillén-Santiago, A.; Olvera, M. De La L.; Maldonado, A.; Asomoza, R.; Acosta, D. R.

2004-04-01

Conductive and highly transparent fluorine-doped zinc oxide (ZnO:F) thin films were deposited onto glass substrates by the chemical spray technique, using zinc acetate and hydrofluoric acid as precursors. Electrical, structural, morphological and optical characteristics were analyzed as a function of the ageing-time of the starting solution, alcoholic solvent type (methanol or ethanol) and the substrate temperature. The results show that these variables play a crucial role on the physical properties measured. The growth rates obtained were of 3 nm/s, showing that the chemical species involved are adequate for the film growth. The effect of the solution ageing-time on the electrical properties was monitored along three weeks. A gradual resistivity decrease with the ageing-time was observed, until a minimum value is reached, at 7 or 9 days depending on the alcohol employed. Films deposited after this time have resistivity values slightly higher. All the films were polycrystalline, with a hexagonal wurtzite structure whose preferential growth is strongly dependent on the deposition variables. Under optimal deposition conditions, ZnO:F films with a high transmittance in the visible spectrum (>85%), resistivity as low as 7 × 10-3 cm and maximum electronic mobility around of 4 cm2/(V-s) were obtained.

The effect of compaction parameters and dielectric composition on properties of soft magnetic composites

NASA Astrophysics Data System (ADS)

Xiao, Ling; Sun, Y. H.; Yu, Lie

2011-07-01

This paper investigated the effect of compaction parameters and dielectric composition on mechanical, magnetic and electrical properties of iron-organosilicon epoxy resin soft magnetic composites. In this work, iron powders with high purity were covered by an organic material (organosilicon epoxy resin) and then by coupling agent (KH-550). The coated powders were then cold compacted at 600, 800 and 1000 MPa and cured under vacuum respectively. The results show that the saturation magnetic flux density and electrical resistivity are dependent on compaction pressure and resin content. Increase in the organic phase content leads to decrease of the saturation magnetic flux density, while increase of the electrical resistivity. Furthermore, the samples with 0.9 wt% resins + 0.1 wt% coupling agent at compaction pressure of 800 MPa shows better properties than the others.

Atomistic study of the electronic contact resistivity between the half-Heusler alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the metal Ag

NASA Astrophysics Data System (ADS)

He, Yuping; Léonard, François; Spataru, Catalin D.

2018-06-01

Half-Heusler (HH) alloys have shown promising thermoelectric properties in the medium- and high-temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts and the expected values of contact resistivity. Here, we employ atomistic ab initio calculations to study electrical contacts in a subclass of HH alloys consisting of the compounds HfCoSb, HfZrCoSb, and HfZrNiSn. By using Ag as a prototypical metal, we show that the termination of the HH material critically determines the presence or absence of strong deformations at the interface. Our study includes contacts to doped materials, and the results indicate that the p -type materials generally form ohmic contacts while the n -type materials have a small Schottky barrier. We calculate the temperature dependence of the contact resistivity in the low- to medium-temperature range and provide quantitative values that set lower limits for these systems.

Transparent and Flexible Large-scale Graphene-based Heater

NASA Astrophysics Data System (ADS)

Kang, Junmo; Lee, Changgu; Kim, Young-Jin; Choi, Jae-Boong; Hong, Byung Hee

2011-03-01

We report the application of transparent and flexible heater with high optical transmittance and low sheet resistance using graphene films, showing outstanding thermal and electrical properties. The large-scale graphene films were grown on Cu foil by chemical vapor deposition methods, and transferred to transparent substrates by multiple stacking. The wet chemical doping process enhanced the electrical properties, showing a sheet resistance as low as 35 ohm/sq with 88.5 % transmittance. The temperature response usually depends on the dimension and the sheet resistance of the graphene-based heater. We show that a 4x4 cm2 heater can reach 80& circ; C within 40 seconds and large-scale (9x9 cm2) heater shows uniformly heating performance, which was measured using thermocouple and infra-red camera. These heaters would be very useful for defogging systems and smart windows.

Multiferroic properties of Indian natural ilmenite

NASA Astrophysics Data System (ADS)

Acharya, Truptimayee; Choudhary, R. N. P.

2017-03-01

In this communication, the main results and analysis of extensive studies of electric and magnetic characteristics (relative dielectric constant, tangent loss, electric polarization, electric transport, impedance, magnetic polarization and magneto-electric coupling coefficient) of Indian natural ilmenite (NI) have been presented. Preliminary structural analysis was studied by Rietveld refinement of room temperature XRD data, which suggests the rhombohedral crystal system of NI. Maxwell-Wagner mechanism was used to explain the nature of the frequency dependence of the relative dielectric constant. The impedance analysis reveals that below 270 °C, only the bulk contributes, whereas at higher temperature, both grain boundary and the bulk contribute to the resistive characteristics of the material. The magnitude of the depression angles of the semicircles in the Nyquist plot has been estimated. The correlated barrier hopping model has been used to explain the frequency dependence of ac conductivity of the material. The activation energy of the compound has been estimated using the temperature dependence of dc conductivity plot. The obtained polarization hysteresis loops manifest improper ferroelectric behavior of NI. The existence M-H hysteresis loop supports anti-ferromagnetism in the studied material. The magneto-electric voltage coupling coefficient is found to be 0.7 mV/cm Oe. Hence, other than dielectric constant, electric polarization, magnetization and magneto-electric studies support the existence of multiferroic properties in NI.

Electrical resistance tomography from measurements inside a steel cased borehole

DOEpatents

Daily, William D.; Schenkel, Clifford; Ramirez, Abelardo L.

2000-01-01

Electrical resistance tomography (ERT) produced from measurements taken inside a steel cased borehole. A tomographic inversion of electrical resistance measurements made within a steel casing was then made for the purpose of imaging the electrical resistivity distribution in the formation remotely from the borehole. The ERT method involves combining electrical resistance measurements made inside a steel casing of a borehole to determine the electrical resistivity in the formation adjacent to the borehole; and the inversion of electrical resistance measurements made from a borehole not cased with an electrically conducting casing to determine the electrical resistivity distribution remotely from a borehole. It has been demonstrated that by using these combined techniques, highly accurate current injection and voltage measurements, made at appropriate points within the casing, can be tomographically inverted to yield useful information outside the borehole casing.

Apparatus Notes.

ERIC Educational Resources Information Center

Eaton, Bruce G., Ed.

1980-01-01

This collection of notes describes (1) an optoelectronic apparatus for classroom demonstrations of mechanical laws, (2) a more efficient method for demonstrated nuclear chain reactions using electrically energized "traps" and ping-pong balls, and (3) an inexpensive demonstration for qualitative analysis of temperature-dependent resistance. (CS)

Optoelectronic properties and interfacial durability of CNT and ITO on boro-silicate glass and PET substrates with nano- and heterostructural aspects

NASA Astrophysics Data System (ADS)

Park, Joung-Man; Wang, Zuo-Jia; Kwon, Dong-Jun; DeVries, Lawrence

2011-02-01

Nano- and hetero-structures of carbon nanotube (CNT) and indium tin oxide (ITO) can control significantly piezoelectric and optoelectronic properties in Microelectromechanical Systems (MEMS) as sensing and actuator under cyclic loading. Optimized preparing conditions were obtained for multi-functional purpose of the specimen by obtaining the best dispersion and turbidity in the solution. Optical transmittance and electrical properties were investigated for CNT and ITO dipping and spraying coating on boro-silicate glass and polyethylene terephthalate (PET) substrates by electrical resistance measurement under cyclic loading and wettability test. Uniform dip-coating was performed using Wilhelmy plate method due to its simple and convenience. Spraying coating was applied to the specimen additionally. The change in the electrical resistance and optical properties of coated layer were mainly dependent upon the number of dip-coating, the concentration of CNT and ITO solutions, and the surface treatment condition. Electric properties of coating layers were measured using four-point probe method, and surface resistance was calculated using a dual configuration method. Optical transmittance of CNT and ITO coated PET film was also evaluated using UV spectrum. Surface energy and their hydrophilic and hydrophobic properties of CNT and ITO coated substrates were investigated by wettability test via static and dynamic contact angle measurements. As the elapsing time of cyclic loading passed, the stability of surface resistance and thus comparative interfacial adhesion between coated layer and substrates was evaluated to compare the thermodynamic work of adhesion, Wa. As dip-coating number increased, surface resistance of coated CNT decreased, whereas the transmittance decreased step-by-step due to the thicker CNT and ITO networked layer. Nano- and heterostructural effects of CNT and ITO solution on the optical and electrical effects have been studied continuously.

Electrical properties of graphene-metal contacts.

PubMed

Cusati, Teresa; Fiori, Gianluca; Gahoi, Amit; Passi, Vikram; Lemme, Max C; Fortunelli, Alessandro; Iannaccone, Giuseppe

2017-07-11

The performance of devices and systems based on two-dimensional material systems depends critically on the quality of the contacts between 2D material and metal. A low contact resistance is an imperative requirement to consider graphene as a candidate material for electronic and optoelectronic devices. Unfortunately, measurements of contact resistance in the literature do not provide a consistent picture, due to limitations of current graphene technology, and to incomplete understanding of influencing factors. Here we show that the contact resistance is intrinsically dependent on graphene sheet resistance and on the chemistry of the graphene-metal interface. We present a physical model of the contacts based on ab-initio simulations and extensive experiments carried out on a large variety of samples with different graphene-metal contacts. Our model explains the spread in experimental results as due to uncontrolled graphene doping and suggests ways to engineer contact resistance. We also predict an achievable contact resistance of 30 Ω·μm for nickel electrodes, extremely promising for applications.

A setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials

NASA Astrophysics Data System (ADS)

Fu, Qiang; Xiong, Yucheng; Zhang, Wenhua; Xu, Dongyan

2017-09-01

This paper presents a setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials. The sample holder was designed to have a compact structure and can be directly mounted in a standard cryostat system for temperature-dependent measurements. For the Seebeck coefficient measurement, a thin bar-shaped sample is mounted bridging two copper bases; and two ceramic heaters are used to generate a temperature gradient along the sample. Two type T thermocouples are used to determine both temperature and voltage differences between two widely separated points on the sample. The thermocouple junction is flattened into a disk and pressed onto the sample surface by using a spring load. The flexible fixation method we adopted not only simplifies the sample mounting process but also prevents thermal contact deterioration due to the mismatch of thermal expansion coefficients between the sample and other parts. With certain modifications, the sample holder can also be used for four-probe electrical resistivity measurements. High temperature measurements are essential for thermoelectric power generation. The experimental system we developed is capable of measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials in a wide temperature range from 80 to 500 K, which can be further extended to even higher temperatures. Measurements on two standard materials, constantan and nickel, confirmed the accuracy and the reliability of the system.

Internal friction, Young's modulus, and electrical resistivity of submicrocrystalline titanium

NASA Astrophysics Data System (ADS)

Kardashev, B. K.; Sapozhnikov, K. V.; Betekhtin, V. I.; Kadomtsev, A. G.; Narykova, M. V.

2017-12-01

The variation of the internal friction, Young's modulus, and electrical resistivity of two grades of polycrystalline titanium (VT1-0 and Grade 4) in the area of low temperatures (100-300 K) as depending on the initial structure and subsequent severe plastic deformation converting the material into the submicrocrystalline structural state in relation to the grain size is studied. The maximum of the internal friction is detected in submicrocrystalline titanium, which is interpreted as a Bordoni peak. All the studied characteristics are sensitive indicators for a nonequilibrium state of the grain boundaries after the deformation. The effect of the initial structure of the metal on its properties after the severe deformation is revealed.

Electronic structure and its external electric field modulation of PbPdO2 ultrathin slabs with (002) and (211) preferred orientations.

PubMed

Yang, Yanmin; Zhong, Kehua; Xu, Guigui; Zhang, Jian-Min; Huang, Zhigao

2017-07-31

The Electronic structure of PbPdO 2 with (002) and (211) preferred orientations were investigated using first-principles calculation. The calculated results indicate that, (002) and (211) orientations exhibit different electric field dependence of band-gap and carrier concentration. The small band gap and more sensitive electric field modulation of band gap were found in (002) orientation. Moreover, the electric field modulation of the resistivity up to 3-4 orders of magnitude is also observed in (002) slab, which reveals that origin of colossal electroresistance. Lastly, electric field modulation of band gap is well explained. This work should be significant for repeating the colossal electroresistance.

Evaluation of electrical properties of Cr/CrN nano-multilayers for electronic applications.

PubMed

Marulanda, D M; Olaya, J J; Patiño, E J

2011-06-01

The electrical properties of Cr/CrN nano-multilayers produced by Unbalanced Magnetron Sputtering have been studied as a function of bilayer period and total thickness. Two groups of multilayers were produced: in the first group the bilayer period varied between 20 nm, 100 nm and 200 nm with total thickness of 1 microm, and in the second group the bilayer period varied between 25 nm, 50 nm and 100 nm and a total thickness of 100 nm. X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were used in order to investigate the microstructure characteristics of the multilayers, and the Four Point Probe (FPP) method was used to evaluate in-plane and transverse electrical resistivity. XRD results show (111) and (200) orientations for all the CrN coatings and the presence of a multilayer structure was confirmed through SEM studies. Transverse electrical resistivity results show that this property is strongly dependent on the bilayer period.

Giant reversible anisotropy changes at room temperature in a (La,Sr)MnO3/Pb(Mg,Nb,Ti)O3 magneto-electric heterostructure.

PubMed

Chopdekar, Rajesh Vilas; Buzzi, Michele; Jenkins, Catherine; Arenholz, Elke; Nolting, Frithjof; Takamura, Yayoi

2016-06-08

In a model artificial multiferroic system consisting of a (011)-oriented ferroelectric Pb(Mg,Nb,Ti)O3 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO3 film, electric field pulse sequences of less than 6 kV/cm induce large, reversible, and bistable remanent strains. The magnetic anisotropy symmetry reversibly switches from a highly anisotropic two-fold state to a more isotropic one, with concomitant changes in resistivity. Anisotropy changes at the scale of a single ferromagnetic domain were measured using X-ray microscopy, with electric-field dependent magnetic domain reversal showing that the energy barrier for magnetization reversal is drastically lowered. Free energy calculations confirm this barrier lowering by up to 70% due to the anisotropic strain changes generated by the substrate. Thus, we demonstrate that an electric field pulse can be used to 'set' and 'reset' the magnetic anisotropy orientation and resistive state in the film, as well as to lower the magnetization reversal barrier, showing a promising route towards electric-field manipulation of multifunctional nanostructures at room temperature.

Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films

NASA Astrophysics Data System (ADS)

Kudo, Kohei; Yamada, Shinya; Chikada, Jinichiro; Shimanuki, Yuta; Nakamura, Yoshiaki; Hamaya, Kohei

2018-04-01

We study the effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films. We find that temperature dependence of electrical resistivity and carrier type for Fe2- x V1+ x Al films are similar to those for bulk samples reported previously. In addition, the electrical and thermoelectric properties can be modulated by varying x. These results indicate that the electronic band structure having a pseudo gap at around the Fermi level is demonstrated even in thin-film Fe2VAl samples. This study will lead to further improvement in thermoelectric properties of the thin-film Fe2VAl.

Design of pressure-driven microfluidic networks using electric circuit analogy.

PubMed

Oh, Kwang W; Lee, Kangsun; Ahn, Byungwook; Furlani, Edward P

2012-02-07

This article reviews the application of electric circuit methods for the analysis of pressure-driven microfluidic networks with an emphasis on concentration- and flow-dependent systems. The application of circuit methods to microfluidics is based on the analogous behaviour of hydraulic and electric circuits with correlations of pressure to voltage, volumetric flow rate to current, and hydraulic to electric resistance. Circuit analysis enables rapid predictions of pressure-driven laminar flow in microchannels and is very useful for designing complex microfluidic networks in advance of fabrication. This article provides a comprehensive overview of the physics of pressure-driven laminar flow, the formal analogy between electric and hydraulic circuits, applications of circuit theory to microfluidic network-based devices, recent development and applications of concentration- and flow-dependent microfluidic networks, and promising future applications. The lab-on-a-chip (LOC) and microfluidics community will gain insightful ideas and practical design strategies for developing unique microfluidic network-based devices to address a broad range of biological, chemical, pharmaceutical, and other scientific and technical challenges.

Long-term ERT monitoring of biogeochemical changes of an aged hydrocarbon contamination.

PubMed

Caterina, David; Flores Orozco, Adrian; Nguyen, Frédéric

2017-06-01

Adequate management of contaminated sites requires information with improved spatio-temporal resolution, in particular to assess bio-geochemical processes, such as the transformation and degradation of contaminants, precipitation of minerals or changes in groundwater geochemistry occurring during and after remediation procedures. Electrical Resistivity Tomography (ERT), a geophysical method sensitive to pore-fluid and pore-geometry properties, permits to gain quasi-continuous information about subsurface properties in real-time and has been consequently widely used for the characterization of hydrocarbon-impacted sediments. However, its application for the long-term monitoring of processes accompanying natural or engineered bioremediation is still difficult due to the poor understanding of the role that biogeochemical processes play in the electrical signatures. For in-situ studies, the task is further complicated by the variable signal-to-noise ratio and the variations of environmental parameters leading to resolution changes in the electrical images. In this work, we present ERT imaging results for data collected over a period of two years on a site affected by a diesel fuel contamination and undergoing bioremediation. We report low electrical resistivity anomalies in areas associated to the highest contaminant concentrations likely due transformations of the contaminant due to microbial activity and accompanying release of metabolic products. We also report large seasonal variations of the bulk electrical resistivity in the contaminated areas in correlation with temperature and groundwater level fluctuations. However, the amplitude of bulk electrical resistivity variations largely exceeds the amplitude expected given existing petrophysical models. Our results suggest that the variations in electrical properties are mainly controlled by microbial activity which in turn depends on soil temperature and hydrogeological conditions. Therefore, ERT can be suggested as a promising tool to track microbial activity during bioremediation even though further research is still needed to completely understand the bio-geochemical processes involved and their impact on electrical signatures. Copyright © 2017 Elsevier B.V. All rights reserved.

Long-term ERT monitoring of biogeochemical changes of an aged hydrocarbon contamination

NASA Astrophysics Data System (ADS)

Caterina, David; Flores Orozco, Adrian; Nguyen, Frédéric

2017-06-01

Adequate management of contaminated sites requires information with improved spatio-temporal resolution, in particular to assess bio-geochemical processes, such as the transformation and degradation of contaminants, precipitation of minerals or changes in groundwater geochemistry occurring during and after remediation procedures. Electrical Resistivity Tomography (ERT), a geophysical method sensitive to pore-fluid and pore-geometry properties, permits to gain quasi-continuous information about subsurface properties in real-time and has been consequently widely used for the characterization of hydrocarbon-impacted sediments. However, its application for the long-term monitoring of processes accompanying natural or engineered bioremediation is still difficult due to the poor understanding of the role that biogeochemical processes play in the electrical signatures. For in-situ studies, the task is further complicated by the variable signal-to-noise ratio and the variations of environmental parameters leading to resolution changes in the electrical images. In this work, we present ERT imaging results for data collected over a period of two years on a site affected by a diesel fuel contamination and undergoing bioremediation. We report low electrical resistivity anomalies in areas associated to the highest contaminant concentrations likely due transformations of the contaminant due to microbial activity and accompanying release of metabolic products. We also report large seasonal variations of the bulk electrical resistivity in the contaminated areas in correlation with temperature and groundwater level fluctuations. However, the amplitude of bulk electrical resistivity variations largely exceeds the amplitude expected given existing petrophysical models. Our results suggest that the variations in electrical properties are mainly controlled by microbial activity which in turn depends on soil temperature and hydrogeological conditions. Therefore, ERT can be suggested as a promising tool to track microbial activity during bioremediation even though further research is still needed to completely understand the bio-geochemical processes involved and their impact on electrical signatures.

Free-standing nanocomposites with high conductivity and extensibility.

PubMed

Chun, Kyoung-Yong; Kim, Shi Hyeong; Shin, Min Kyoon; Kim, Youn Tae; Spinks, Geoffrey M; Aliev, Ali E; Baughman, Ray H; Kim, Seon Jeong

2013-04-26

The prospect of electronic circuits that are stretchable and bendable promises tantalizing applications such as skin-like electronics, roll-up displays, conformable sensors and actuators, and lightweight solar cells. The preparation of highly conductive and highly extensible materials remains a challenge for mass production applications, such as free-standing films or printable composite inks. Here we present a nanocomposite material consisting of carbon nanotubes, ionic liquid, silver nanoparticles, and polystyrene-polyisoprene-polystyrene having a high electrical conductivity of 3700 S cm(-1) that can be stretched to 288% without permanent damage. The material is prepared as a concentrated dispersion suitable for simple processing into free-standing films. For the unstrained state, the measured thermal conductivity for the electronically conducting elastomeric nanoparticle film is relatively high and shows a non-metallic temperature dependence consistent with phonon transport, while the temperature dependence of electrical resistivity is metallic. We connect an electric fan to a DC power supply using the films to demonstrate their utility as an elastomeric electronic interconnect. The huge strain sensitivity and the very low temperature coefficient of resistivity suggest their applicability as strain sensors, including those that operate directly to control motors and other devices.

Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

PubMed

Kim, Gun Hwan; Lee, Jong Ho; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong

2012-10-24

The electrical performances of Pt/TiO(2)/Ti/Pt stacked Schottky-type diode (SD) was systematically examined, and this performance is dependent on the chemical structures of the each layer and their interfaces. The Ti layers containing a tolerable amount of oxygen showed metallic electrical conduction characteristics, which was confirmed by sheet resistance measurement with elevating the temperature, transmission line measurement (TLM), and Auger electron spectroscopy (AES) analysis. However, the chemical structure of SD stack and resulting electrical properties were crucially affected by the dissolved oxygen concentration in the Ti layers. The lower oxidation potential of the Ti layer with initially higher oxygen concentration suppressed the oxygen deficiency of the overlying TiO(2) layer induced by consumption of the oxygen from TiO(2) layer. This structure results in the lower reverse current of SDs without significant degradation of forward-state current. Conductive atomic force microscopy (CAFM) analysis showed the current conduction through the local conduction paths in the presented SDs, which guarantees a sufficient forward-current density as a selection device for highly integrated crossbar array resistive memory.

Evaluation of Non-Chromate Passivations on Electroplated gamma-Phase Zinc Nickel

NASA Astrophysics Data System (ADS)

Volz, Steven Michael

This research focused on the corrosion response and electrochemical behavior of electroplated low hydrogen embrittlement alkaline gamma-phase zinc nickel with passivation layers. The motivation was the need to replace hexavalent chromium conversion coatings in military grade electrical systems with a more environment friendly alternative. The passivation layers were employed for the purpose of mitigating corrosion attack while maintaining low contact resistance. Trivalent chromium-based passivations and cerium-based passivations were compared against the currently used hexavalent chromium conversion coating. The coating systems were compared using electrochemical impedance spectroscopy, cyclic potentiodymanic scans, salt spray exposure testing, electrical resistance measurements, microstructure analysis, and compositional analysis. Coating systems with lower open circuit had a lower corrosion current and performed better during salt spray testing. All of the systems evaluated had corrosion products consistent with oxidized zinc compounds but the morphology of the passivation was dependent on the passivation. The electrical contact resistance ranged from 1 to 108 mO/cm 2, after salt spray testing. Two versions of Trivalent chromium-based passivations, were able to meet military performance specifications after corrosion testing.

Tracing the pH dependent activation of autophagy in cancer cells by silicon nanowire-based impedance biosensor.

PubMed

Alikhani, Alireza; Gharooni, Milad; Abiri, Hamed; Farokhmanesh, Fatemeh; Abdolahad, Mohammad

2018-05-30

Monitoring the pH dependent behavior of normal and cancer cells by impedimetric biosensor based on Silicon Nanowires (SiNWs) was introduced to diagnose the invasive cancer cells. Autophagy as a biologically activated process in invasive cancer cells during acidosis, protect them from apoptosis in lower pH which presented in our work. As the autophagy is the only activated pathways which can maintain cellular proliferation in acidic media, responses of SiNW-ECIS in acidified cells could be correlated to the probability of autophagy activation in normal or cancer cells. In contrast, cell survival pathway wasn't activated in low-grade cancer cells which resulted in their acidosis. The measured electrical resistance of MCF10, MCF7, and MDA-MB468 cell lines, by SiNW sensor, in normal and acidic media were matched by the biological analyses of their vital functions. Invasive cancer cells exhibited increased electrical resistance in pH 6.5 meanwhile the two other types of the breast cells exhibited sharp (MCF10) and moderate (MCF7) decrease in their resistance. This procedure would be a new trend in microenvironment based cancer investigation. Copyright © 2018 Elsevier B.V. All rights reserved.

Analysis of the resistive network in a bio-inspired CMOS vision chip

NASA Astrophysics Data System (ADS)

Kong, Jae-Sung; Sung, Dong-Kyu; Hyun, Hyo-Young; Shin, Jang-Kyoo

2007-12-01

CMOS vision chips for edge detection based on a resistive circuit have recently been developed. These chips help develop neuromorphic systems with a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends dominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the MOSFET for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160×120 CMOS vision chips have been fabricated by using a standard CMOS technology. The experimental results have been nicely matched with our prediction.

Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP

NASA Astrophysics Data System (ADS)

Rao, L. Dasaradha; Reddy, N. Ramesha; Kumar, A. Ashok; Reddy, V. Rajagopal

2013-06-01

The current-voltage (I-V) characteristics of the Er/p-InP Schottky barrier diodes (SBDs) have been investigated in the temperature range of 300-400K in steps of 25K. The electrical parameters such as ideality factor (n) and zero-bias barrier height (Φbo) are found to be strongly temperature dependent. It is observed that ΦI-V decreases whereas n increases with decreasing temperature. The series resistance is also calculated from the forward I-V characteristics of Er/p-InP SBD and it is found to be strongly dependent on temperature. Further, the temperature dependence of energy distribution of interface state density (NSS) profiles is determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor. It is observed that the NSS values increase with a decrease in temperature.

Changes in electrical and thermal parameters of led packages under different current and heating stresses

NASA Astrophysics Data System (ADS)

Jayawardena, Adikaramge Asiri

The goal of this dissertation is to identify electrical and thermal parameters of an LED package that can be used to predict catastrophic failure real-time in an application. Through an experimental study the series electrical resistance and thermal resistance were identified as good indicators of contact failure of LED packages. This study investigated the long-term changes in series electrical resistance and thermal resistance of LED packages at three different current and junction temperature stress conditions. Experiment results showed that the series electrical resistance went through four phases of change; including periods of latency, rapid increase, saturation, and finally a sharp decline just before failure. Formation of voids in the contact metallization was identified as the underlying mechanism for series resistance increase. The rate of series resistance change was linked to void growth using the theory of electromigration. The rate of increase of series resistance is dependent on temperature and current density. The results indicate that void growth occurred in the cap (Au) layer, was constrained by the contact metal (Ni) layer, preventing open circuit failure of contact metal layer. Short circuit failure occurred due to electromigration induced metal diffusion along dislocations in GaN. The increase in ideality factor, and reverse leakage current with time provided further evidence to presence of metal in the semiconductor. An empirical model was derived for estimation of LED package failure time due to metal diffusion. The model is based on the experimental results and theories of electromigration and diffusion. Furthermore, the experimental results showed that the thermal resistance of LED packages increased with aging time. A relationship between thermal resistance change rate, with case temperature and temperature gradient within the LED package was developed. The results showed that dislocation creep is responsible for creep induced plastic deformation in the die-attach solder. The temperatures inside the LED package reached the melting point of die-attach solder due to delamination just before catastrophic open circuit failure. A combined model that could estimate life of LED packages based on catastrophic failure of thermal and electrical contacts is presented for the first time. This model can be used to make a-priori or real-time estimation of LED package life based on catastrophic failure. Finally, to illustrate the usefulness of the findings from this thesis, two different implementations of real-time life prediction using prognostics and health monitoring techniques are discussed.

Power flow analysis and optimal locations of resistive type superconducting fault current limiters.

PubMed

Zhang, Xiuchang; Ruiz, Harold S; Geng, Jianzhao; Shen, Boyang; Fu, Lin; Zhang, Heng; Coombs, Tim A

2016-01-01

Based on conventional approaches for the integration of resistive-type superconducting fault current limiters (SFCLs) on electric distribution networks, SFCL models largely rely on the insertion of a step or exponential resistance that is determined by a predefined quenching time. In this paper, we expand the scope of the aforementioned models by considering the actual behaviour of an SFCL in terms of the temperature dynamic power-law dependence between the electrical field and the current density, characteristic of high temperature superconductors. Our results are compared to the step-resistance models for the sake of discussion and clarity of the conclusions. Both SFCL models were integrated into a power system model built based on the UK power standard, to study the impact of these protection strategies on the performance of the overall electricity network. As a representative renewable energy source, a 90 MVA wind farm was considered for the simulations. Three fault conditions were simulated, and the figures for the fault current reduction predicted by both fault current limiting models have been compared in terms of multiple current measuring points and allocation strategies. Consequently, we have shown that the incorporation of the E - J characteristics and thermal properties of the superconductor at the simulation level of electric power systems, is crucial for estimations of reliability and determining the optimal locations of resistive type SFCLs in distributed power networks. Our results may help decision making by distribution network operators regarding investment and promotion of SFCL technologies, as it is possible to determine the maximum number of SFCLs necessary to protect against different fault conditions at multiple locations.

Low-Energy Electronic Properties of Clean CaRuO3: Elusive Landau Quasiparticles

NASA Astrophysics Data System (ADS)

Schneider, M.; Geiger, D.; Esser, S.; Pracht, U. S.; Stingl, C.; Tokiwa, Y.; Moshnyaga, V.; Sheikin, I.; Mravlje, J.; Scheffler, M.; Gegenwart, P.

2014-05-01

We have prepared high-quality epitaxial thin films of CaRuO3 with residual resistivity ratios up to 55. Shubnikov-de Haas oscillations in the magnetoresistance and a T2 temperature dependence in the electrical resistivity only below 1.5 K, the coefficient of which is substantially suppressed in large magnetic fields, establish CaRuO3 as a Fermi liquid (FL) with an anomalously low coherence scale. At T >1.5 K non-Fermi-liquid (NFL) behavior is found in the electrical resistivity. The high sample quality allows access to the intrinsic electronic properties via THz spectroscopy. For frequencies below 0.6 THz, the conductivity is Drude-like and can be modeled by FL concepts; for higher frequencies, non-Drude behavior is found, which is inconsistent with FL predictions. This establishes CaRuO3 as a prime example of optical NFL behavior in the THz range.

Active control of magnetoresistance of organic spin valves using ferroelectricity

PubMed Central

Sun, Dali; Fang, Mei; Xu, Xiaoshan; Jiang, Lu; Guo, Hangwen; Wang, Yanmei; Yang, Wenting; Yin, Lifeng; Snijders, Paul C.; Ward, T. Z.; Gai, Zheng; Zhang, X.-G.; Lee, Ho Nyung; Shen, Jian

2014-01-01

Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves. PMID:25008155

Multi-functional properties of CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

2012-09-01

In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

Modelisations et inversions tri-dimensionnelles en prospections gravimetrique et electrique

NASA Astrophysics Data System (ADS)

Boulanger, Olivier

The aim of this thesis is the application of gravity and resistivity methods for mining prospecting. The objectives of the present study are: (1) to build a fast gravity inversion method to interpret surface data; (2) to develop a tool for modelling the electrical potential acquired at surface and in boreholes when the resistivity distribution is heterogeneous; and (3) to define and implement a stochastic inversion scheme allowing the estimation of the subsurface resistivity from electrical data. The first technique concerns the elaboration of a three dimensional (3D) inversion program allowing the interpretation of gravity data using a selection of constraints such as the minimum distance, the flatness, the smoothness and the compactness. These constraints are integrated in a Lagrangian formulation. A multi-grid technique is also implemented to resolve separately large and short gravity wavelengths. The subsurface in the survey area is divided into juxtaposed rectangular prismatic blocks. The problem is solved by calculating the model parameters, i.e. the densities of each block. Weights are given to each block depending on depth, a priori information on density, and density range allowed for the region under investigation. The present code is tested on synthetic data. Advantages and behaviour of each method are compared in the 3D reconstruction. Recovery of geometry (depth, size) and density distribution of the original model is dependent on the set of constraints used. The best combination of constraints experimented for multiple bodies seems to be flatness and minimum volume for multiple bodies. The inversion method is tested on real gravity data. The second tool developed in this thesis is a three-dimensional electrical resistivity modelling code to interpret surface and subsurface data. Based on the integral equation, it calculates the charge density caused by conductivity gradients at each interface of the mesh allowing an exact estimation of the potential. Modelling generates a huge matrix made of Green's functions which is stored by using the method of pyramidal compression. The third method consists to interpret electrical potential measurements from a non-linear geostatistical approach including new constraints. This method estimates an analytical covariance model for the resistivity parameters from the potential data. (Abstract shortened by UMI.)

A revisit to the temperature dependence of electrical resistivity of α - Titanium at low temperatures

NASA Astrophysics Data System (ADS)

Sharath Chandra, L. S.; Mondal, R.; Thamizhavel, A.; Dhar, S. K.; Roy, S. B.

2017-09-01

The temperature dependence of resistivity ρ(T) of a polycrystalline sample and a single crystal sample (current along the [0001] direction) of α - Titanium (Ti) at low temperatures is revisited to understand the electrical charge transport phenomena in this hexagonal closed pack metal. We show that the ρ(T) in single crystal Ti can be explained by considering the scattering of electrons due to electron-phonon, electron-electron, inter-band s-d and electron-impurity interactions, whereas the ρ(T) of polycrystalline Ti could not be explained by these interactions alone. We observed that the effects of the anisotropy of the hexagonal structure on the electronic band structure and the phonon dispersion need to be taken into account to explain ρ(T) of polycrystalline Ti. Two Debye temperatures corresponding to two different directions for the electron-phonon interactions and inter-band s-d scattering are needed to account the observed ρ(T) in polycrystalline Ti.

Thin-Film Nanowire Networks for Transparent Conductor Applications: Simulations of Sheet Resistance and Percolation Thresholds

NASA Astrophysics Data System (ADS)

Winey, Karen I.; Mutiso, Rose M.; Sherrott, Michelle C.; Rathmell, Aaron R.; Wiley, Benjamin J.

2013-03-01

Thin-film metal nanowire networks are being pursued as a viable alternative to the expensive and brittle indium tin oxide (ITO) for transparent conductors. For high performance applications, nanowire networks must exhibit high transmittance at low sheet resistance. Previously, we have used complimentary experimental, simulation and theoretical techniques to explore the effects of filler aspect ratio (L/D), orientation, and size-dispersity on the electrical conductivity of three-dimensional rod-networks in bulk polymer nanocomposites. We adapted our 3D simulation approach and analytical percolation model to study the electrical properties of thin-film rod-networks. By fitting our simulation results to experimental results, we determined the average effective contact resistance between silver nanowires. This contact resistance was then used to quantify how the sheet resistance depends on the aspect ratio of the rods and to show that networks made of nanowires with L/D greater than 100 yield sheet resistances lower than the required 100 Ohm/sq. We also report the critical area fraction of rods required to form a percolated network in thin-film networks and provide an analytical expression for the critical area fraction as a function of L/D.

TOPICAL REVIEW: Physics of thermoelectric cooling

NASA Astrophysics Data System (ADS)

Gurevich, Yu G.; Logvinov, G. N.

2005-12-01

A new approach is suggested to explain the Peltier effect. It assumes that the Peltier effect is not an isothermal effect. The approach is based on the occurrences of induced thermal fluxes in a structure which consists of two conducting media, through which a dc electric current flows. These induced thermal diffusion fluxes arise to compensate for the change in the thermal flux caused by the electric current (the drift thermal flux) flowing through the junction, in accordance with the general Le Châtelier-Braun principle. The occurrence of these thermal diffusion fluxes leads to temperature heterogeneity in the structure and, as a result, to a cooling or heating of the junction. Within the framework of this concept, the thermoelectric cooling is analysed. It is shown that in the general case the Peltier effect always occurs together with another thermoelectric effect. This thermoelectric effect is predicted for the first time, and we have called it the barrierless thermoelectric effect. Both these effects essentially depend on the junction surface thermal resistance. The Peltier effect disappears in the limiting case of a very large surface thermal resistance, while the barrierless effect disappears in the limiting case of a very small surface thermal resistance. The dependence of thermoelectric cooling on the geometrical dimensions of the structure is noted, and the corresponding interpretation of this fact is discussed. It is shown that the thermoelectric cooling (heating) is a thermodynamically reversible process in the linear approximation of the electric current applied.

Back-gated Nb-doped MoS2 junctionless field-effect-transistors

NASA Astrophysics Data System (ADS)

Mirabelli, Gioele; Schmidt, Michael; Sheehan, Brendan; Cherkaoui, Karim; Monaghan, Scott; Povey, Ian; McCarthy, Melissa; Bell, Alan P.; Nagle, Roger; Crupi, Felice; Hurley, Paul K.; Duffy, Ray

2016-02-01

Electrical measurements were carried out to measure the performance and evaluate the characteristics of MoS2 flakes doped with Niobium (Nb). The flakes were obtained by mechanical exfoliation and transferred onto 85 nm thick SiO2 oxide and a highly doped Si handle wafer. Ti/Au (5/45 nm) deposited on top of the flake allowed the realization of a back-gate structure, which was analyzed structurally through Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). To best of our knowledge this is the first cross-sectional TEM study of exfoliated Nb-doped MoS2 flakes. In fact to date TEM of transition-metal-dichalcogenide flakes is extremely rare in the literature, considering the recent body of work. The devices were then electrically characterized by temperature dependent Ids versus Vds and Ids versus Vbg curves. The temperature dependency of the device shows a semiconductor behavior and, the doping effect by Nb atoms introduces acceptors in the structure, with a p-type concentration 4.3 × 1019 cm-3 measured by Hall effect. The p-type doping is confirmed by all the electrical measurements, making the structure a junctionless transistor. In addition, other parameters regarding the contact resistance between the top metal and MoS2 are extracted thanks to a simple Transfer Length Method (TLM) structure, showing a promising contact resistivity of 1.05 × 10-7 Ω/cm2 and a sheet resistance of 2.36 × 102 Ω/sq.

Effect of 50 MeV Li3 + irradiation on structural and electrical properties of Mn-doped ZnO

NASA Astrophysics Data System (ADS)

Neogi, S. K.; Chattopadhyay, S.; Banerjee, Aritra; Bandyopadhyay, S.; Sarkar, A.; Kumar, Ravi

2011-05-01

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn1 - xMnxO-type system. Zn1 - xMnxO (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li3 + ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn0.98Mn0.02O, whereas for the Zn0.96Mn0.04O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity (ρRT) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn0.96Mn0.04O, ρRT decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn0.98Mn0.02O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn0.96Mn0.04O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn-doped ZnO.

PubMed

Neogi, S K; Chattopadhyay, S; Banerjee, Aritra; Bandyopadhyay, S; Sarkar, A; Kumar, Ravi

2011-05-25

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn(1 - x)Mn(x)O-type system. Zn(1 - x)Mn(x)O (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li(3+) ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn(0.98)Mn(0.02)O, whereas for the Zn(0.96)Mn(0.04)O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn(0.98)Mn(0.02)O, the observed sharp decrease in room temperature resistivity (ρ(RT)) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn(0.96)Mn(0.04)O, ρ(RT) decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn(0.98)Mn(0.02)O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn(0.96)Mn(0.04)O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Films, Buckypapers and Fibers from Clay, Chitosan and Carbon Nanotubes

PubMed Central

Higgins, Thomas M.; Warren, Holly; Panhuis, Marc in het

2011-01-01

The mechanical and electrical characteristics of films, buckypapers and fiber materials from combinations of clay, carbon nanotubes (CNTs) and chitosan are described. The rheological time-dependent characteristics of clay are maintained in clay–carbon nanotube–chitosan composite dispersions. It is demonstrated that the addition of chitosan improves their mechanical characteristics, but decreases electrical conductivity by three-orders of magnitude compared to clay–CNT materials. We show that the electrical response upon exposure to humid atmosphere is influenced by clay-chitosan interactions, i.e., the resistance of clay–CNT materials decreases, whereas that of clay–CNT–chitosan increases. PMID:28348277

Could binary mixture of Nd-Ni ions control the electrical behavior of strontium-barium M-type hexaferrite nanoparticles?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iqbal, Muhammad Javed, E-mail: mjiqauchem@yahoo.com; Farooq, Saima

2011-05-15

Research highlights: {yields} Strontium-barium hexaferrites (Sr{sub 0.5}Ba{sub 0.5}Fe{sub 12}O{sub 19}) in single magnetoplumbite phase solid structure are synthesized by the co-precipitation method. {yields} Structural and electrical properties of Nd-Ni substituted ferrites are investigated. {yields} These ferrite materials possess high electrical resistivity (108 {Omega} cm) that is essential to curb the eddy current loss, which is pre-requisite for surface mount devices. -- Abstract: Cationic substitution in M-type hexaferrites is considered to be an important tool for modification of their electrical properties. This work is part of our comprehensive study on the synthesis and characterization of Nd-Ni doped strontium-barium hexaferrite nanomaterials ofmore » nominal composition Sr{sub 0.5}Ba{sub 0.5-x}Nd{sub x}Fe{sub 12-y}Ni{sub y}O{sub 19} (x = 0.00-0.10; y = 0.00-1.00). Doping with this binary mixture modulates the physical and electrical properties of strontium-barium hexaferrite nanoparticles. Structural and electrical properties of the co-precipitated ferrites are investigated using state-of-the-art techniques. The results of X-ray diffraction analysis reveal that the lattice parameters and cell volume are inversely related to the dopant content. Temperature dependent DC-electrical resistivity measurements infer that resistivity of strontium-barium hexaferrites decreases from 1.8 x 10{sup 10} to 2.0 x 10{sup 8} {Omega} cm whereas the drift mobility, dielectric constant and dielectric loss tangent are directly related to the Nd-Ni content. The results of the study demonstrate a relationship between the modulation of electrical properties of substituted ferrites and nature of cations and their lattice site occupancy.« less

Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

NASA Astrophysics Data System (ADS)

Ali, H. M.; Mohamed, H. A.; Mohamed, S. H.

2005-08-01

Indium tin oxide (ITO) is widely utilized in numerous industrial applications due to its unique combined properties of transparency to visible light and electrical conductivity. ITO films were deposited on glass substrates by an electron beam evaporation technique at room temperature from bulk samples, with different thicknesses. The film with 1500 Å thick was selected to perform annealing in the temperature range of 200 400 °C and annealing for varying times from 15 to 120 min at 400 °C. The X-ray diffraction of the films was analyzed in order to investigate its dependence on thickness, and annealing. Electrical and optical measurements were also carried out. Transmittance, optical energy gap, refractive index, carrier concentration, thermal emissivity and resistivity were investigated. It was found that the as-deposited films with different thicknesses were highly absorbing and have relatively poor electrical properties. The films become opaque with increasing the film thickness. After thermal annealing, the resistance decreases and a simultaneous variation in the optical transmission occurs. A transmittance value of 85.5% in the IR region and 82% in the visible region of the spectrum and a resistivity of 2.8 × 10-4 Ω Cm were obtained at annealing temperature of 400 °C for 120 min.

Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litwin-Staszewska, E.; Suski, T.; Piotrzkowski, R.

Comprehensive studies of the electrical properties of Mg-doped bulk GaN crystals, grown by high-pressure synthesis, were performed as a function of temperature up to 750{degree}C. Annealing of the samples in nitrogen ambient modifies qualitatively their resistivity values {rho} and the {rho}(T) variation. It was found that our material is characterized by a high concentration of oxygen-related donors and that the charge transport in the studied samples is determined by two types of states, one of shallow character (Mg-related state, E{sub A}{approximately}0.15eV), and the second one much more deep, E{sub 2}{approximately}0.95eV (above the valence band). Depending on the effective concentration ofmore » either states, different resistivities {rho} can be observed: lower resistivity ({rho}{lt}10{sup 4}{Omega}cm at ambient temperature) in samples with dominant E{sub A} states and very high resistivity ({rho}{gt}10{sup 6}{Omega}cm at ambient temperature) in samples with dominant E{sub 2} states. For the first type of samples, annealing at T{sub ann}{lt}500{degree}C leads to a decrease of their resistivity and is associated with an increase of the effective concentration of the shallow Mg acceptors. Annealing of both types of samples at temperatures between 600 and 750{degree}C leads to an increase of the deep state concentration. The presence of hydrogen ambient during annealing of the low-resistivity samples strongly influences their properties. The increase of the sample resistivity and an appearance of a local vibrational mode of hydrogen at 3125 cm{minus}1 were observed. These effects can be removed by annealing in hydrogen-free ambient. {copyright} 2001 American Institute of Physics.« less

Electrical resistivity of La

DOE Office of Scientific and Technical Information (OSTI.GOV)

Legvold, S.; Burgardt, P.; Beaudry, B.J.

1977-09-15

The electrical resistivity of high-purity double hexagonal-close-packed (dhcp) ..cap alpha..-La from 5 to 300 K is reported. Measurements were made on small-grained samples prepared by heat treatment of cold-worked lanthanum. Measurements were also made on samples cut in different directions from an ingot slowly cooled from the molten state. The room-temperature results were all within 2% of the mean value. Chemically pure ..beta..-La (fcc) cannot be retained at room temperature, hence, measurements were made on an fcc sample of La containing 0.2-at. % Gd and approx. 0.8-at. % total interstitial nonmetallic impurities. The cubic form has almost the same typemore » of temperature dependence as the dhcp form, but has a 10% lower magnitude.« less

Controls on the physical properties of gas-hydrate-bearing sediments because of the interaction between gas hydrate and porous media

USGS Publications Warehouse

Lee, Myung W.; Collett, Timothy S.

2005-01-01

Physical properties of gas-hydrate-bearing sediments depend on the pore-scale interaction between gas hydrate and porous media as well as the amount of gas hydrate present. Well log measurements such as proton nuclear magnetic resonance (NMR) relaxation and electromagnetic propagation tool (EPT) techniques depend primarily on the bulk volume of gas hydrate in the pore space irrespective of the pore-scale interaction. However, elastic velocities or permeability depend on how gas hydrate is distributed in the pore space as well as the amount of gas hydrate. Gas-hydrate saturations estimated from NMR and EPT measurements are free of adjustable parameters; thus, the estimations are unbiased estimates of gas hydrate if the measurement is accurate. However, the amount of gas hydrate estimated from elastic velocities or electrical resistivities depends on many adjustable parameters and models related to the interaction of gas hydrate and porous media, so these estimates are model dependent and biased. NMR, EPT, elastic-wave velocity, electrical resistivity, and permeability measurements acquired in the Mallik 5L-38 well in the Mackenzie Delta, Canada, show that all of the well log evaluation techniques considered provide comparable gas-hydrate saturations in clean (low shale content) sandstone intervals with high gas-hydrate saturations. However, in shaly intervals, estimates from log measurement depending on the pore-scale interaction between gas hydrate and host sediments are higher than those estimates from measurements depending on the bulk volume of gas hydrate.

Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices

NASA Astrophysics Data System (ADS)

Zeevi, Gilad; Katsman, Alexander; Yaish, Yuval E.

2018-02-01

In the present work, we study the initial SET mechanism of resistive switching (RS) in Pt/HfO2/Ti devices under a static electrical stress and the RS mechanism under a bias sweeping mode with rates of 100 mV/s-300 mV/s. We characterize the thin HfO2 dielectric layer by x-ray photoelectron spectroscopy and x-ray diffraction. These findings show that the layer structure is stoichiometric and nanocrystalline with a crystal diameter of ˜ 14 Å. We measure the temporal dependence of the conductive filament growth at different temperatures and for various biases. Furthermore, these devices present stable bipolar resistive switching with a high-to-low resistive state (HRS/LRS) ratio of more than three orders of magnitude. Activation energy E RS ≈ 0.56 eV and drift current parameter V 0 ≈ 0.07 V were determined from the temporal dependence of the initial `SET' process, first HRS to LRS transition [for static electrical stress of V DS = (4.7-5.0 V)]. We analyze the results according to our model suggesting generation of double-charge oxygen vacancies at the anode and their diffusion across the dielectric layer. The double-charge vacancies transform to a single charge and then to neutral vacancies by capturing hot electrons, and form a conductive filament as soon as a critical neutral-vacancy cluster is formed across the dielectric layer.

Processing effects on microstructure, percolation and resistive sensor properties of nickel-zirconium oxide cermet films on silicon substrates

NASA Astrophysics Data System (ADS)

Sundeen, John Edward, Jr.

Thin Ni-ZrO2 cermet films were developed on silicon substrates using solution based, metallo-organic deposition (MOD) technique. The nickel based cermet films on silicon are of interest for heater, temperature and flow sensor devices, particularly in automotive or aerospace applications at UP to 250°C. In this study, precursors for the NiO-ZrO2 composite films were derived from metal carboxylate and nitrate based solutions. Composition and heat treatment conditions were the main process variables for controlling the structure, particle size and morphology, on which the electrical properties depend. Electrical resistance behavior was studied for Ni-ZrO2 films with 25--78 vol.% Ni content. This Ni amount exceeds the percolation threshold for conduction. The dependence of the resistance on individual processing variables, including film thickness, ambient flow rate, sintering temperature and time, and specimen geometry was studied. Electrical characterization included establishing the percolative resistive behavior in the MOD Ni-ZrO2 films. A resistive percolation threshold (pc) at ˜25 vol.% Ni was found for 800°C sintered, 1mum thick Ni-ZrO2 films. Existing models including the general effective media (GEM) percolation equation, and mixture rules were used to develop a predictive expression for Ni-ZrO2 film resistance as a function of composition. Kinetic analysis of particle size in the 55 vol.% Ni cermet films was directly correlated to the sheet resistance (Rs) of the films. The temperature coefficient of resistance (TCR) was also correlated to R s, by the equation: (TCR)alpha = alphao - betaR s. These electrical characteristics make the films suitable for use as gas flow and temperature sensors. Calculated figure of merit (rho-TCR), values for the MOD Ni-ZrO2 films Compared favorably to commercial Pt and Ni based thin and thick film formulations used for heaters and thermal sensors. An added advantage of the MOD Ni-ZrO2, compared to the non-linear behavior of Ni, was that film resistance response to temperature is highly linear over the temperature range of 20--160°C. Select films could be heated to 45--100°C with a low (I2R) power input of 400mW-2W. Then films demonstrated stable hot resistance, high sensitivity and rapid response to gas flow. Significant accomplishments from this work included the development of: (a) MOD derived cermet films of 40--78 vol.% Ni, with high positive TCR of 2600--4250ppm/°C and Rs of 2.5--60%O/□/1mum which are highly suitable for thermal sensing applications, (b) A simple mixture rule rho = rhoo - m·VNi describing the film resistivity with composition; and (c) Expressions correlating film TCR and resistance to sintering time and temperature using particle growth kinetics.

Nonlinear saturation of tearing mode islands.

PubMed

Hastie, R J; Militello, F; Porcelli, F

2005-08-05

New, rigorous results for the tearing island saturation problem are presented. These results are valid for the realistic case where the magnetic island structure is non-symmetric about the reconnection surface and the electron temperature, on which the electrical resistivity depends, is evolved self-consistently with the island growth.

Temperature dependent electrical characteristics of Zn/ZnSe/n-GaAs/In structure

NASA Astrophysics Data System (ADS)

Sağlam, M.; Güzeldir, B.

2016-04-01

We have reported a study of the I-V characteristics of Zn/ZnSe/n-GaAs/In sandwich structure in a wide temperature range of 80-300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The main electrical parameters, such as ideality factor and zero-bias barrier height determined from the forward bias I-V characteristics were found strongly depend on temperature and when the increased, the n decreased with increasing temperature. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. Furthermore, the series resistance have been calculated from the I-V measurements as a function of temperature dependent.

Magnetic field and pressure dependant resistivity behaviour of MnAs

NASA Astrophysics Data System (ADS)

Satya, A. T.; Amaladass, E. P.; Mani, Awadhesh

2018-04-01

The studies on the effect of magnetic field and external pressure on temperature dependant electrical resistivity behaviour of polycrystalline MnAs have been reported. At ambient pressure, ρ(T) shows a first order magnetic transition associated with change in sign of the temperature coefficient of resistivity from positive in the ferromagnetic (FM) phase to negative in the paramagnetic (PM) phase. The magneto resistance is negative and shows a peak at the FM transition temperature (T C ). The first order hysteresis width decreases with increase in magnetic field and the intersection of extrapolated linear variations of T C with field for the cooling and warming cycles enabled determination of the tricritical point. At high pressures, ρ(T) displays non monotonic variation exhibiting a low temperature minimum ({T}\\min L) and a high temperature maximum ({T}\\max H) accompanying broad thermal hysteresis above {T}\\min L. It is surmised that spin disorder scattering is responsible for the resistivity behaviour above {T}\\min L and the essential features of ρ(T) are qualitatively explained using Kasuya theoretical model. Below the {T}\\min L, ρ(T) follows linear logarithmic temperature dependence similar to the effect occurring due to Kondo type of scattering of conduction electrons with localised moments.

Method for Evaluating the Corrosion Resistance of Aluminum Metallization of Integrated Circuits under Multifactorial Influence

NASA Astrophysics Data System (ADS)

Kolomiets, V. I.

2018-03-01

The influence of complex influence of climatic factors (temperature, humidity) and electric mode (supply voltage) on the corrosion resistance of metallization of integrated circuits has been considered. The regression dependence of the average time of trouble-free operation t on the mentioned factors has been established in the form of a modified Arrhenius equation that is adequate in a wide range of factor values and is suitable for selecting accelerated test modes. A technique for evaluating the corrosion resistance of aluminum metallization of depressurized CMOS integrated circuits has been proposed.

Metallic conductivity and air stability in copper chloride intercalated carbon fibers

NASA Astrophysics Data System (ADS)

Oshima, H.; Woollam, J. A.; Yavrouian, A.

1982-12-01

Carbon-copper chloride intercalation compounds have been obtained by using variously graphitized carbon fibers as host materials. The resultant conductors are air stable, thermally stable to 450 K, have electrical resistivities as low as 12.9 microohm cm at room temperature, and have metallic conductivity temperature dependencies. These intercalated fibers have tensile strengths of 160000 psi, and Young's moduli of 25 x 10 to the 6th psi. For aerospace use, 1/(resistivity x density) is a figure of merit. On this basis, a reduction in resistivity by a factor of two will make this conductor competitive with copper.

The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

NASA Astrophysics Data System (ADS)

Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

2008-07-01

It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

Electrophysical Properties of Onion-Like Carbon

NASA Astrophysics Data System (ADS)

Tkachev, E. N.; Romanenko, A. I.; Zhdanov, K. R.; Anikeeva, O. B.; Buryakov, T. I.; Kuznetsov, V. L.; Moseenkov, S. I.

2016-06-01

The paper examines electrophysical properties of onion-like carbon (OLC) samples, where particles have the average size of 4-8 nm and are formed by 5-10 nested fullerene-like spheres connected by 1-3 common curved graphene shells into aggregates with a size of 50-300 nm. We measured the temperature dependence of electrical resistance from 4.2 to 300 K and dependence of magnetoresistance in magnetic fields up to 6 T at the temperature of 4.2 K. Temperature dependences of electrical resistance of samples can be described within the framework of the Mott law with variable hop length for the one-dimensional case or within the framework of the Efros-Shklovskii Coulomb gap. We observed the quadratically increasing positive magnetoresistance up to 6 T associated with compression of wave functions of conduction electrons. Negative magnetoresistance was observed in the range of magnetic fields up to 1-2 T in the case of some samples. This is due to the fact that magnetic field suppresses the contributions to magnetoresistance made by interference effects in the area of hopping conductivity. The measurements were used to estimate the localization radius that is comparable to the diameter of OLC particles (nano-onions).

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

PubMed

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

Spin-dependent heat transport and thermal boundary resistance

NASA Astrophysics Data System (ADS)

Jeong, Taehee

In this thesis, thermal conductivity change depending on the magnetic configurations has been studied. In order to make different magnetic configurations, we developed a spin valve structure, which has high MR ratio and low saturation field. The high MR ratio was achieved using Co/Cu multilayer and 21A or 34A thick Cu layer. The low saturation field was obtained by implementing different coercivities of the successive ferromagnetic layers. For this purpose, Co/Cu/Cu tri-layered structure was used with the thicknesses of the Co layers; 15 A and 30 A. For the thermal conductivity measurement, a three-omega method was employed with a thermally isolated microscale rod. We fabricated the microscale rod using optical lithography and MEMS process. Then the rod was wire-bonded to a chip-carver for further electrical measurement. For the thermal conductivity measurement, we built the three-omega measurement system using two lock-in amplifiers and two differential amplifiers. A custom-made electromagnet was added to the system to investigate the impact of magnetic field. We observed titanic thermal conductivity change depending on the magnetic configurations of the Co/Cu/Co multilayer. The thermal conductivity change was closely correlated with that of the electric conductivity in terms of the spin orientation, but the thermal conductivity was much more sensitive than that of the electric conductivity. The relative thermal conductivity change was 50% meanwhile that of electric resistivity change was 8.0%. The difference between the two ratios suggests that the scattering mechanism for charge and heat transport in the Co/Cu/Co multilayer is different. The Lorentz number in Weidemann-Franz law is also spin-dependent. Thermal boundary resistance between metal and dielectrics was also studied in this thesis. The thermal boundary resistance becomes critical for heat transport in a nanoscale because the thermal boundary resistance can potentially determine overall heat transport in thin film structures. A transient theraroreflectance (TTR) technique can be used for measuring the thermal conductivity of thin films in cross-sectional direction. In this study, a pump-probe scheme was employed for the TTR technique. We built an optical pump-probe system by using a nanosecond pulse laser for pumping and a continuous-wave laser for probing. A short-time heating event occured at the surface of a sample by shining a laser pulse on the surface. Then the time-resolved thermoreflectance signals were detected using a photodetector and an oscilloscope. The increased temperature decreases slowly and its thermal decay depends on the thermal properties of a sample. Since the reflectivity is linearly proportional to the temperature, the time-resolved thermoreflectance signals have the information of the thermal properties of a sample. In order to extract the thermal properties of a sample, a thermal analysis was performed by fitting the experimental data with thermal models. We developed 2-layered and 3-layered thermal models using the analogies between thermal conduction and electric conduction and a transmission-line concept. We used two sets of sample structures: Au/SiNx/Si substrate and Au/CoFe/SiNx/Si substrate with various thickness of SiN x layer. Using the pump-probe system, we measured the time-resolved thermoreflectance signals for each sample. Then, the thermal conductivity and thermal boundary resistance were obtained by fitting the experimental data with the thermal models. The thermal conductivity of SiNx films was measured to be 2.0 W/mK for both structures. In the case of the thermal boundary resistance, it was 0.81x10-5 m 2K/W at the Au/SiNx interface and 0.54x10 -5 m2K/W at the CoFe/SiNx interface, respectively. The difference of the thermal boundary resistance between Au/SiNx and CoFe/SiNx might be came from the different phonon dispersion of Au and CoFe. The thermal conductivity did not depend on the thickness of SiNx films in the thickness range of 50-200nm. However, the thermal boundary resistance at metal/SiNx interfaces will impact overall thermal conduction when the thickness of SiNx thin films is in a nanometer order. For example, apparent thermal conductivity of SiN x film becomes half of the intrinsic thermal conductivity when the thickness decreases to 16nm. Therefore, it is advised that the thermal boundary resistance between metal and dielectrics should be counted in nano-scale electronic devices. (Abstract shortened by UMI.)

Tuning the resistive switching properties of TiO2-x films

NASA Astrophysics Data System (ADS)

Ghenzi, N.; Rozenberg, M. J.; Llopis, R.; Levy, P.; Hueso, L. E.; Stoliar, P.

2015-03-01

We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.

Giant reversible anisotropy changes at room temperature in a (La,Sr)MnO3/Pb(Mg,Nb,Ti)O3 magneto-electric heterostructure

PubMed Central

Chopdekar, Rajesh Vilas; Buzzi, Michele; Jenkins, Catherine; Arenholz, Elke; Nolting, Frithjof; Takamura, Yayoi

2016-01-01

In a model artificial multiferroic system consisting of a (011)-oriented ferroelectric Pb(Mg,Nb,Ti)O3 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO3 film, electric field pulse sequences of less than 6 kV/cm induce large, reversible, and bistable remanent strains. The magnetic anisotropy symmetry reversibly switches from a highly anisotropic two-fold state to a more isotropic one, with concomitant changes in resistivity. Anisotropy changes at the scale of a single ferromagnetic domain were measured using X-ray microscopy, with electric-field dependent magnetic domain reversal showing that the energy barrier for magnetization reversal is drastically lowered. Free energy calculations confirm this barrier lowering by up to 70% due to the anisotropic strain changes generated by the substrate. Thus, we demonstrate that an electric field pulse can be used to ‘set’ and ‘reset’ the magnetic anisotropy orientation and resistive state in the film, as well as to lower the magnetization reversal barrier, showing a promising route towards electric-field manipulation of multifunctional nanostructures at room temperature. PMID:27271984

Giant reversible anisotropy changes at room temperature in a (La,Sr)MnO 3/Pb(Mg,Nb,Ti)O 3 magneto-electric heterostructure

DOE PAGES

Chopdekar, Rajesh Vilas; Buzzi, Michele; Jenkins, Catherine; ...

2016-06-08

In a model artificial multiferroic system consisting of a (011)-oriented ferroelectric Pb(Mg,Nb,Ti)O 3 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO 3 film, electric field pulse sequences of less than 6 kV/cm induce large, reversible, and bistable remanent strains. The magnetic anisotropy symmetry reversibly switches from a highly anisotropic two-fold state to a more isotropic one, with concomitant changes in resistivity. Anisotropy changes at the scale of a single ferromagnetic domain were measured using X-ray microscopy, with electric-field dependent magnetic domain reversal showing that the energy barrier for magnetization reversal is drastically lowered. Free energy calculations confirm this barrier loweringmore » by up to 70% due to the anisotropic strain changes generated by the substrate. Thus, we demonstrate that an electric field pulse can be used to 'set' and 'reset' the magnetic anisotropy orientation and resistive state in the film, as well as to lower the magnetization reversal barrier, showing a promising route towards electric-field manipulation of multifunctional nanostructures at room temperature.« less

Time-domain electromagnetic soundings collected in Dawson County, Nebraska, 2007-09

USGS Publications Warehouse

Payne, Jason; Teeple, Andrew

2011-01-01

Between April 2007 and November 2009, the U.S. Geological Survey, in cooperation with the Central Platte Natural Resources District, collected time-domain electro-magnetic (TDEM) soundings at 14 locations in Dawson County, Nebraska. The TDEM soundings provide information pertaining to the hydrogeology at each of 23 sites at the 14 locations; 30 TDEM surface geophysical soundings were collected at the 14 locations to develop smooth and layered-earth resistivity models of the subsurface at each site. The soundings yield estimates of subsurface electrical resistivity; variations in subsurface electrical resistivity can be correlated with hydrogeologic and stratigraphic units. Results from each sounding were used to calculate resistivity to depths of approximately 90-130 meters (depending on loop size) below the land surface. Geonics Protem 47 and 57 systems, as well as the Alpha Geoscience TerraTEM, were used to collect the TDEM soundings (voltage data from which resistivity is calculated). For each sounding, voltage data were averaged and evaluated statistically before inversion (inverse modeling). Inverse modeling is the process of creating an estimate of the true distribution of subsurface resistivity from the mea-sured apparent resistivity obtained from TDEM soundings. Smooth and layered-earth models were generated for each sounding. A smooth model is a vertical delineation of calculated apparent resistivity that represents a non-unique estimate of the true resistivity. Ridge regression (Interpex Limited, 1996) was used by the inversion software in a series of iterations to create a smooth model consisting of 24-30 layers for each sounding site. Layered-earth models were then generated based on results of smooth modeling. The layered-earth models are simplified (generally 1 to 6 layers) to represent geologic units with depth. Throughout the area, the layered-earth models range from 2 to 4 layers, depending on observed inflections in the raw data and smooth model inversions. The TDEM data collected were considered good results on the basis of root mean square errors calculated after inversion modeling, comparisons with borehole geophysical logging, and repeatability.

Approximate relationship between frequency-dependent skin depth resolved from geoelectromagnetic pedotransfer function and depth of investigation resolved from geoelectrical measurements: A case study of coastal formation, southern Nigeria

NASA Astrophysics Data System (ADS)

George, N. J.; Obiora, D. N.; Ekanem, A. M.; Akpan, A. E.

2016-10-01

The task involved in the interpretation of Vertical Electrical Sounding (VES) data is how to get unique results in the absence/limited number of borehole information, which is usually limited to information on the spot. Geological and geochemical mapping of electrical properties are usually limited to direct observations on the surface and therefore, conclusions and extrapolations that can be drawn about the system electrical characteristics and possible underlying structures may be masked as geology changes with positions. The electrical resistivity study pedotransfer functions (PTFs) have been linked with the electromagnetic (EM) resolved PTFs at chosen frequencies of skin/penetration depth corresponding to the VES resolved investigation depth in order to determine the local geological attributes of hydrogeological repository in the coastal formation dominated with fine sand. The illustrative application of effective skin depth depicts that effective skin depth has direct relation with the EM response of the local source over the layered earth and thus, can be linked to the direct current earth response functions as an aid for estimating the optimum depth and electrical parameters through comparative analysis. Though the VES and EM resolved depths of investigation at appropriate effective and theoretical frequencies have wide gaps, diagnostic relations characterising the subsurface depth of interest have been established. The determining factors of skin effect have been found to include frequency/period, resistivity/conductivity, absorption/attenuation coefficient and energy loss factor. The novel diagnostic relations and their corresponding constants between 1-D resistivity data and EM skin depth are robust PTFs necessary for checking the accuracy associated with the non-unique interpretations that characterise the 1-D resistivity data, mostly when lithostratigraphic data are not available.

[In vivo spetrometric analysis of the electrical impedance of the first leaf of maize (Zea mays L.) as a function of soil and atmosphere hydrous conditions].

PubMed

Laarabi, Saïd; El Kinani, Khalifa; Ettouhami, Aziz; Limouri, Mohammed

2005-05-01

In vivo spectrometric analysis of the electrical impedance of the first leaf of maize (Zea mays L.) as a function of soil and atmosphere hydrous conditions. We have measured the electrical resistance and capacitance of the first leaf of maize aged 14 days. The plants were cultivated at different levels of soil and atmospheric humidity and submitted to quiet or agitated air. In 'control' plants cultivated in quiet air under moderate relative humidity (HRA) (50 to 60%), the amplitude of the spectrometric bioimpedance spectrum (CSB) increased with the quantity of water available to the roots. Agitated air or elevated HRA increased the magnitude of the CSB in plants cultivated at 40% of the maximal retention capacity (CRM) of the soil. On the other hand, the CSB decreased in plants cultivated at 60% of the CRM or in hydroponics. This was accompanied by a dramatic decrease in the electrical resistance. The action of the atmospheric factors studied depends on the quantity of water where the roots are bathing.

Rheometrical experiments with monitoring of resistivity: for a better understanding of the solid-fluid transition in clayey landslides

NASA Astrophysics Data System (ADS)

Carrière, Simon; Bièvre, Grégory; Chambon, Guillaume; Jongmans, Denis; Lebourg, Thomas; Larose, Eric

2015-04-01

Landslides are natural and complex phenomena which affect all types of geological formations and present a large variety of size, morphology and displacements rates. Among these phenomena, flow-like events in clay-rich formations are particularly complex due to the unpredictable acceleration and fluidization that characterize them. Because of their suddenness, such landslides constitute serious threat for population living in these areas. The forecast and the understanding of these events has then been an active topic of research in the scientific community during the past decades. In that respect, rheometrical experiments in the laboratory bring some insight into the processes occurring during the solid-fluid transition. In creep tests, the evolution of the shear strain rate is measured under constant levels of shear stress, allowing to follow changes in apparent viscosity with time and to observe fluidization. Rheometrical oscillatory tests have been designed to capture the evolution of the elastic shear modulus G (and hence the shear wave velocity Vs) during these creep phases. Previous results have shown that Vs exhibits a drop at the solid-fluid transition, with complex time-dependent effects which could lead, under transient loading, to the occurrence of Vs variations prior to the transition. A complementary way to understand the processes is to measure the electrical resistivity during these rheometrical tests. This parameter, which depends on the water content and salinity, as well as on the amount of clay particles, could also exhibit some changes before or during the solid-fluid transition. For that purpose, the metallic plates of the rotational rheometer have been replaced by new ones made in an electrically insulating material (PVC) with a configuration of four inserted circular electrodes. Rheometrical tests made with this new apparatus provide similar rheological results. For the electrical tests, the geometrical factor has been computed using Finite Element modeling and has also been experimentally measured with water samples of varying and known resistivities. A difference of less than 1% was obtained between the two approaches. First resistivity results obtained on the Trièves clay (French Alps) show a progressive, weak but significant variation in resistivity (5-6 percent) during creep tests. The comparison between the creep and resistivity curves suggests that the resistivity decreases when the apparent viscosity increases. Further experiments are underway on different clays sampled on several flow-like landslides and would allow to have a better insight in the electrical response of such material during the solid-fluid transition.

Annealing effect on the structural and dielectric properties of hematite nanoparticles

NASA Astrophysics Data System (ADS)

Kumar, Vijay; Chahal, Surjeet; Singh, Dharamvir; Kumar, Ashok; Kumar, Parmod; Asokan, K.

2018-05-01

In the present work, we have synthesized hematite (α-Fe2O3) nanoparticles by sol-gel method and sintered them at different temperatures (200 °C, 400 °C and 800 °C for six hours). The samples were then characterized using versatile characterization techniques such as X-ray diffraction (XRD), dielectric measurement and temperature dependent resistivity (RT) for their structural, dielectric and electrical properties. XRD measurements infer that intensity of peak increases with an increase in temperature resulting an increase in crystallite size. Temperature dependent resistivity also shows decrease in the resistivity of the samples. Furthermore, the dielectric measurements correspond to the increase in the dielectric constant. Based on these observations, it can be inferred that sintering temperature plays an important role in tailoring the various physical properties of hematite nanoparticles.

Method and apparatus for measuring properties of particle beams using thermo-resistive material properties

DOEpatents

Degtiarenko, Pavel V.; Dotson, Danny Wayne

2007-10-09

A beam position detector for measuring the properties of a charged particle beam, including the beam's position, size, shape, and intensity. One or more absorbers are constructed of thermo-resistive material and positioned to intercept and absorb a portion of the incoming beam power, thereby causing local heating of each absorber. The local temperature increase distribution across the absorber, or the distribution between different absorbers, will depend on the intensity, size, and position of the beam. The absorbers are constructed of a material having a strong dependence of electrical resistivity on temperature. The beam position detector has no moving parts in the vicinity of the beam and is especially suited to beam areas having high ionizing radiation dose rates or poor beam quality, including beams dispersed in the transverse direction and in their time radio frequency structure.

Electrical Resistivity of Wire Arc Sprayed Zn and Cu Coatings for In-Mold-Metal-Spraying

NASA Astrophysics Data System (ADS)

Bobzin, K.; Öte, M.; Knoch, M. A.; Liao, X.; Hopmann, Ch; Ochotta, P.

2018-06-01

Electrical functionalities can be integrated into plastic parts by integrating thermally sprayed metal coatings into the non-conductive base material. Thermally sprayed conducting tracks for power and signal transmission are one example. In this case, the electrical resistance or resistivity of the coatings should be investigated. Therefore, the electrical resistivity of wire arc sprayed Zn and Cu coatings has been investigated. In case of Zn coatings, spray distance, gas pressure and wire diameter could be identified as significant influencing parameters on the electrical resistivity. In contrast, process gas, gas pressure and voltage do have a significant influence on the electrical resistivity of Cu coatings. Through the use of the In-Mold-Metal-Spraying method (IMMS), thermal degradation can be avoided by transferring thermally sprayed coating from a mold insert onto the plastic part. Therefore, the influence of the transfer process on the electrical resistance of the coatings has also been investigated.

Influence of carbon nanoparticle modification on the mechanical and electrical properties of epoxy in small volumes.

PubMed

Leopold, Christian; Augustin, Till; Schwebler, Thomas; Lehmann, Jonas; Liebig, Wilfried V; Fiedler, Bodo

2017-11-15

The influence of nanoparticle morphology and filler content on the mechanical and electrical properties of carbon nanoparticle modified epoxy is investigated regarding small volumes. Three types of particles, representing spherical, tubular and layered morphologies are used. A clear size effect of increasing true failure strength with decreasing volume is found for neat and carbon black modified epoxy. Carbon nanotube (CNT) modified epoxy exhibits high potential for strength increase, but dispersion and purity are critical. In few layer graphene modified epoxy, particles are larger than statistically distributed defects and initiate cracks, counteracting any size effect. Different toughness increasing mechanisms on the nano- and micro-scale depending on particle morphology are discussed based on scanning electron microscopy images. Electrical percolation thresholds in the small volume fibres are significantly higher compared to bulk volume, with CNT being found to be the most suitable morphology to form electrical conductive paths. Good correlation between electrical resistance change and stress strain behaviour under tensile loads is observed. The results show the possibility to detect internal damage in small volumes by measuring electrical resistance and therefore indicate to the high potential for using CNT modified polymers in fibre reinforced plastics as a multifunctional, self-monitoring material with improved mechanical properties. Copyright © 2017. Published by Elsevier Inc.

An electrical-heating and self-sensing shape memory polymer composite incorporated with carbon fiber felt

NASA Astrophysics Data System (ADS)

Gong, Xiaobo; Liu, Liwu; Liu, Yanju; Leng, Jinsong

2016-03-01

Shape memory polymers (SMPs) have the ability to adjust their stiffness, lock a temporary shape, and recover the permanent shape upon imposing an appropriate stimulus. They have found their way into the field of morphing structures. The electrically Joule resistive heating of the conductive composite can be a desirable stimulus to activate the shape memory effect of SMPs without external heating equipment. Electro-induced SMP composites incorporated with carbon fiber felt (CFF) were explored in this work. The CFF is an excellent conductive filler which can easily spread throughout the composite. It has a huge advantage in terms of low cost, simple manufacturing process, and uniform and tunable temperature distribution while heating. A continuous and compact conductive network made of carbon fibers and the overlap joints among them was observed from the microscopy images, and this network contributes to the high conductive properties of the CFF/SMP composites. The CFF/SMP composites can be electrical-heated rapidly and uniformly, and its’ shape recovery effect can be actuated by the electrical resistance Joule heating of the CFF without an external heater. The CFF/SMP composite get higher modulus and higher strength than the pure SMP without losing any strain recovery property. The high dependence of temperature and strain on the electrical resistance also make the composite a good self-sensing material. In general, the CFF/SMP composite shows great prospects as a potential material for the future morphing structures.

Functional asymmetry and plasticity of electrical synapses interconnecting neurons through a 36-state model of gap junction channel gating

PubMed Central

Kraujalis, Tadas; Maciunas, Kestutis

2017-01-01

We combined the Hodgkin–Huxley equations and a 36-state model of gap junction channel gating to simulate electrical signal transfer through electrical synapses. Differently from most previous studies, our model can account for dynamic modulation of junctional conductance during the spread of electrical signal between coupled neurons. The model of electrical synapse is based on electrical properties of the gap junction channel encompassing two fast and two slow gates triggered by the transjunctional voltage. We quantified the influence of a difference in input resistances of electrically coupled neurons and instantaneous conductance–voltage rectification of gap junctions on an asymmetry of cell-to-cell signaling. We demonstrated that such asymmetry strongly depends on junctional conductance and can lead to the unidirectional transfer of action potentials. The simulation results also revealed that voltage spikes, which develop between neighboring cells during the spread of action potentials, can induce a rapid decay of junctional conductance, thus demonstrating spiking activity-dependent short-term plasticity of electrical synapses. This conclusion was supported by experimental data obtained in HeLa cells transfected with connexin45, which is among connexin isoforms expressed in neurons. Moreover, the model allowed us to replicate the kinetics of junctional conductance under different levels of intracellular concentration of free magnesium ([Mg2+]i), which was experimentally recorded in cells expressing connexin36, a major neuronal connexin. We demonstrated that such [Mg2+]i-dependent long-term plasticity of the electrical synapse can be adequately reproduced through the changes of slow gate parameters of the 36-state model. This suggests that some types of chemical modulation of gap junctions can be executed through the underlying mechanisms of voltage gating. Overall, the developed model accounts for direction-dependent asymmetry, as well as for short- and long-term plasticity of electrical synapses. Our modeling results demonstrate that such complex behavior of the electrical synapse is important in shaping the response of coupled neurons. PMID:28384220

Thickness dependent optical and electrical properties of CdSe thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purohit, A., E-mail: anuradha.purohit34@gmail.com; Chander, S.; Nehra, S. P.

2016-05-06

The effect of thickness on the optical and electrical properties of CdSe thin films is investigated in this paper. The films of thickness 445 nm, 631 nm and 810 nm were deposited on glass and ITO coated glass substrates using thermal evaporation technique. The deposited thin films were thermally annealed in air atmosphere at temperature 100°C and were subjected to UV-Vis spectrophotometer and source meter for optical and electrical analysis respectively. The absorption coefficient is observed to increase with photon energy and found maximum in higher photon energy region. The extinction coefficient and refractive index are also calculated. The electrical analysis shows thatmore » the electrical resistivity is observed to be decreased with thickness.« less

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

Electrically tunable transport and high-frequency dynamics in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Seinige, Heidi; Williamson, Morgan; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2016-12-01

We report dc and high-frequency transport properties of antiferromagnetic S r3I r2O7 . Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in S r3I r2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.

Microstructural analysis of mass transport phenomena in gas diffusion media for high current density operation in PEM fuel cells

NASA Astrophysics Data System (ADS)

Kotaka, Toshikazu; Tabuchi, Yuichiro; Mukherjee, Partha P.

2015-04-01

Cost reduction is a key issue for commercialization of fuel cell electric vehicles (FCEV). High current density operation is a solution pathway. In order to realize high current density operation, it is necessary to reduce mass transport resistance in the gas diffusion media commonly consisted of gas diffusion layer (GDL) and micro porous layer (MPL). However, fundamental understanding of the underlying mass transport phenomena in the porous components is not only critical but also not fully understood yet due to the inherent microstructural complexity. In this study, a comprehensive analysis of electron and oxygen transport in the GDL and MPL is conducted experimentally and numerically with three-dimensional (3D) microstructural data to reveal the structure-transport relationship. The results reveal that the mass transport in the GDL is strongly dependent on the local microstructural variations, such as local pore/solid volume fractions and connectivity. However, especially in the case of the electrical conductivity of MPL, the contact resistance between carbon particles is the dominant factor. This suggests that reducing the contact resistance between carbon particles and/or the number of contact points along the transport pathway can improve the electrical conductivity of MPL.

Electrical resistivity of liquid iron with high concentration of light element impurities

NASA Astrophysics Data System (ADS)

Wagle, F.; Steinle-Neumann, G.

2017-12-01

The Earth's outer core mainly consists of liquid iron, enriched with several weight percent of lighter elements, such as silicon, oxygen, sulfur or carbon. Electrical resistivities of alloys of this type determine the stability of the geodynamo. Both computational and experimental results show that resistivites of Fe-based alloys deviate significantly from values of pure Fe. Using optical conductivity values computed with the Kubo-Greenwood formalism for DFT-based molecular dynamics results, we analyze the high-P and T behavior of resitivities for Fe-alloys containing various concentrations of sulfur, oxygen and silicon. As the electron mean free path length in amorphous and liquid material becomes comparable to interatomic distances at high P and T, electron scattering is expected to be dominated by the short-range order, rather than T-dependent vibrational contributions, and we describe such correlations in our results. In analogy to macroscopic porous media, we further show that resistivity of a liquid metal-nonmetal alloy is determined to first order by the resistivity of the metallic matrix and the volume fraction of non-metallic impurities.

Tissue resistivity estimation in the presence of positional and geometrical uncertainties.

PubMed

Baysal, U; Eyüboğlu, B M

2000-08-01

Geometrical uncertainties (organ boundary variation and electrode position uncertainties) are the biggest sources of error in estimating electrical resistivity of tissues from body surface measurements. In this study, in order to decrease estimation errors, the statistically constrained minimum mean squared error estimation algorithm (MiMSEE) is constrained with a priori knowledge of the geometrical uncertainties in addition to the constraints based on geometry, resistivity range, linearization and instrumentation errors. The MiMSEE calculates an optimum inverse matrix, which maps the surface measurements to the unknown resistivity distribution. The required data are obtained from four-electrode impedance measurements, similar to injected-current electrical impedance tomography (EIT). In this study, the surface measurements are simulated by using a numerical thorax model. The data are perturbed with additive instrumentation noise. Simulated surface measurements are then used to estimate the tissue resistivities by using the proposed algorithm. The results are compared with the results of conventional least squares error estimator (LSEE). Depending on the region, the MiMSEE yields an estimation error between 0.42% and 31.3% compared with 7.12% to 2010% for the LSEE. It is shown that the MiMSEE is quite robust even in the case of geometrical uncertainties.

Conductive fabric seal

DOEpatents

Livesay, Ronald Jason; Mason, Brandon William; Kuhn, Michael Joseph; Rowe, Nathan Carl

2017-04-04

Disclosed are several examples of a system and method for detecting if an article is being tampered with. Included is a covering made of a substrate that is coated with a layer of an electrically conductive material that forms an electrically conductive surface having an electrical resistance. The covering is configured to at least partially encapsulate the article such that the article cannot be tampered with, without modifying the electrical resistance of the electrically conductive surface of the covering. A sensing device is affixed to the electrically conductive surface of the covering and the sensing device monitors the condition of the covering by producing a signal that is indicative of the electrical resistance of the electrically conductive surface of the covering. A measured electrical resistance that differs from a nominal electrical resistance is indicative of a covering that is being tampered with and an alert is communicated to an observer.

Conductive fabric seal

DOEpatents

Livesay, Ronald Jason; Mason, Brandon William; Kuhn, Michael Joseph; Rowe, Nathan Carl

2015-10-13

Disclosed are several examples of a system and method for detecting if an article is being tampered with. Included is a covering made of a substrate that is coated with a layer of an electrically conductive material that forms an electrically conductive surface having an electrical resistance. The covering is configured to at least partially encapsulate the article such that the article cannot be tampered with, without modifying the electrical resistance of the electrically conductive surface of the covering. A sensing device is affixed to the electrically conductive surface of the covering and the sensing device monitors the condition of the covering by producing a signal that is indicative of the electrical resistance of the electrically conductive surface of the covering. A measured electrical resistance that differs from a nominal electrical resistance is indicative of a covering that is being tampered with and an alert is communicated to an observer.

Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers

NASA Astrophysics Data System (ADS)

Krivoy, E. M.; Rahimi, S.; Nair, H. P.; Salas, R.; Maddox, S. J.; Ironside, D. J.; Jiang, Y.; Dasika, V. D.; Ferrer, D. A.; Kelp, G.; Shvets, G.; Akinwande, D.; Bank, S. R.

2012-11-01

We demonstrate the growth of high-quality, single crystal, rocksalt LaAs on III-V substrates; employing thin well-behaved LuAs barriers layers at the III-V/LaAs interfaces to suppress nucleation of other LaAs phases, interfacial reactions between GaAs and LaAs, and polycrystalline LaAs growth. This method enables growth of single crystal epitaxial rocksalt LaAs with enhanced structural and electrical properties. Temperature-dependent resistivity and optical reflectivity measurements suggest that epitaxial LaAs is semimetallic, consistent with bandstructure calculations in literature. LaAs exhibits distinct electrical and optical properties, as compared with previously reported rare-earth arsenide materials, with a room-temperature resistivity of ˜459 μΩ-cm and an optical transmission window >50% between ˜3-5 μm.

Synthesis and electrical properties of (Pb,Co)Sr2(Y,Ca)Cu2Oz

NASA Astrophysics Data System (ADS)

Tashiro, T.; Maeda, T.; Abe, R.; Takechi, S.; Takahashi, T.; Haruta, M.; Horii, S.

One of related materials to high-temperature superconductors (HTSC's) with nominal compositions of (Pb0.5Co0.5)Sr2(Y1xCax)Cu2Oz (x=0∼0.6) is synthesized and characterized. All samples are nearly single-phase, and its crystal structure is likely to be so-called "1-2-1-2" type which is one of typical structures of HTSC's. Electrical resistivity is decreased as x increases. While superconductivity is not observed at temperatures between room-temperature and 20 K for all samples, temperature dependence of the resistivity exhibits metallic behavior down to 150 K for x=0.5. Phase formation and transport behavior are discussed focusing on mixed valence-state of Co2+ and Co3+.

Anomalous mobility of highly charged particles in pores

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Yinghua; Yang, Crystal; Hinkle, Preston

2015-07-16

Single micropores in resistive-pulse technique were used to understand a complex dependence of particle mobility on its surface charge density. We show that the mobility of highly charged carboxylated particles decreases with the increase of the solution pH due to an interplay of three effects: (i) ion condensation, (ii) formation of an asymmetric electrical double layer around the particle, and (iii) electroosmotic flow induced by the charges on the pore walls and the particle surfaces. The results are important for applying resistive-pulse technique to determine surface charge density and zeta potential of the particles. As a result, the experiments alsomore » indicate the presence of condensed ions, which contribute to the measured current if a sufficiently high electric field is applied across the pore.« less

Effect of oxidation on transport properties of zirconium-1% niobium alloy

NASA Astrophysics Data System (ADS)

Peletsky, V. E.; Musayeva, Z. A.

1995-11-01

The thermal conductivity and electrical resistivity of zirconium-1 wt% niobium samples were measured before and after the process of their oxidation in air. A special procedure was used to dissolve the gas and to smooth out its concentration in the alloy. The basic experiments were performed under high vacuum under steady-state temperature conditions. The temperature range was 300 1600 K. for the pure alloy and 300 1100 K for the samples containing oxygen. It was found that the thermal conductivity—oxygen concentration relation reverses its sign from negative at low and middle temperatures to positive at temperatures above 900 K. The relation between the electrical resistivity and the oxygen content does not show this feature. The Lorenz function was found to have an anomalous temperature dependence.

Influence of electrical resistivity and machining parameters on electrical discharge machining performance of engineering ceramics.

PubMed

Ji, Renjie; Liu, Yonghong; Diao, Ruiqiang; Xu, Chenchen; Li, Xiaopeng; Cai, Baoping; Zhang, Yanzhen

2014-01-01

Engineering ceramics have been widely used in modern industry for their excellent physical and mechanical properties, and they are difficult to machine owing to their high hardness and brittleness. Electrical discharge machining (EDM) is the appropriate process for machining engineering ceramics provided they are electrically conducting. However, the electrical resistivity of the popular engineering ceramics is higher, and there has been no research on the relationship between the EDM parameters and the electrical resistivity of the engineering ceramics. This paper investigates the effects of the electrical resistivity and EDM parameters such as tool polarity, pulse interval, and electrode material, on the ZnO/Al2O3 ceramic's EDM performance, in terms of the material removal rate (MRR), electrode wear ratio (EWR), and surface roughness (SR). The results show that the electrical resistivity and the EDM parameters have the great influence on the EDM performance. The ZnO/Al2O3 ceramic with the electrical resistivity up to 3410 Ω·cm can be effectively machined by EDM with the copper electrode, the negative tool polarity, and the shorter pulse interval. Under most machining conditions, the MRR increases, and the SR decreases with the decrease of electrical resistivity. Moreover, the tool polarity, and pulse interval affect the EWR, respectively, and the electrical resistivity and electrode material have a combined effect on the EWR. Furthermore, the EDM performance of ZnO/Al2O3 ceramic with the electrical resistivity higher than 687 Ω·cm is obviously different from that with the electrical resistivity lower than 687 Ω·cm, when the electrode material changes. The microstructure character analysis of the machined ZnO/Al2O3 ceramic surface shows that the ZnO/Al2O3 ceramic is removed by melting, evaporation and thermal spalling, and the material from the working fluid and the graphite electrode can transfer to the workpiece surface during electrical discharge machining ZnO/Al2O3 ceramic.

Which bulb is brighter? It depends on connection! Strategies for illuminating electrical concepts using light bulbs

NASA Astrophysics Data System (ADS)

Wong, Darren; Lee, Paul; Foong, S. K.

2017-11-01

In this paper, we examined teachers’ understanding of electrical concepts such as power, current and potential difference based on how these concepts were applied to understand the relative brightness seen in bulbs of different wattage under different connections—series or parallel. From the responses of teachers to a concept question, we identified common lines of reasoning and the associated conceptual difficulties. To support the explanation of the concept question, we set up relevant circuits and made measurements of the circuits. We discuss the temperature dependence of the resistance of the light bulb which although critical for in depth understanding of the relative brightness, was often omitted in the teacher responses. Lastly, we share insights and strategies to elicit and confront students' thinking and to help them resolve, extend and apply their thinking with regard to the related electrical concepts using various light bulb activities.

Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques

NASA Astrophysics Data System (ADS)

Lin, Jack; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

Transient measurements of impedance spectroscopy and electrical time-of-flight (TOF) techniques were used for the evaluation of carrier propagation dependence on applied potentials in a pentacene organic field effect transistor (OFET). These techniques are based on carrier propagation, thus isolates the effect of charge density. The intrinsic mobility which is free from contact resistance effects was obtained by measurement of various channel lengths. The obtained intrinsic mobility shows good correspondence with steady-state current-voltage measurement's saturation mobility. However, their power law relations on mobility vs applied potential resulted in different exponents, suggesting different carrier propagation mechanisms, which is attributable to filling of traps or space charge field in the channel region. The hypothesis was verified by a modified electrical TOF experiment which demonstrated how the accumulated charges in the channel influence the effective mobility.

Determination of Electrical Resistivity of Dry Coke Beds

NASA Astrophysics Data System (ADS)

Eidem, P. A.; Tangstad, M.; Bakken, J. A.

2008-02-01

The electrical resistivity of the coke bed is of great importance when producing FeMn, SiMn, and FeCr in a submerged arc furnace. In these processes, a coke bed is situated below and around the electrode tip and consists of metallurgical coke, slag, gas, and metal droplets. Since the basic mechanisms determining the electrical resistivity of a coke bed is not yet fully understood, this investigation is focused on the resistivity of dry coke beds consisting of different carbonaceous materials, i.e., coke beds containing no slag or metal. A method that reliably compares the electrical bulk resistivity of different metallurgical cokes at 1500 °C to 1600 °C is developed. The apparatus is dimensioned for industrial sized materials, and the electrical resistivity of anthracite, charcoal, petroleum coke, and metallurgical coke has been measured. The resistivity at high temperatures of the Magnitogorsk coke, which has the highest resistivity of the metallurgical cokes investigated, is twice the resistivity of the Corus coke, which has the lowest electrical resistivity. Zdzieszowice and SSAB coke sort in between with decreasing resistivities in the respective order. The electrical resistivity of anthracite, charcoal, and petroleum coke is generally higher than the resistivity of the metallurgical cokes, ranging from about two to about eight times the resistivity of the Corus coke at 1450 °C. The general trend is that the bulk resistivity of carbon materials decreases with increasing temperature and increasing particle size.

Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene

NASA Astrophysics Data System (ADS)

Li, Jing; Miranda, Henrique Pereira Coutada; Niquet, Yann-Michel; Genovese, Luigi; Duchemin, Ivan; Wirtz, Ludger; Delerue, Christophe

2015-08-01

Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from which all possible electron-phonon couplings are computed. The electrical resistivity of graphene is found in very good agreement with experiments performed at high carrier density. A common methodology is applied to study the transition from one to two dimensions by considering CNTs with diameter up to 16 nm. It is found that the mobility in CNTs of increasing diameter converges to the same value, i.e., the mobility in graphene. This convergence is much faster at high temperature and high carrier density. For small-diameter CNTs, the mobility depends strongly on chirality, diameter, and the existence of a band gap.

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

NASA Astrophysics Data System (ADS)

Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

2017-11-01

Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

Ion irradiation of AZO thin films for flexible electronics

NASA Astrophysics Data System (ADS)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Effect of Silver Doping on Transport Properties of Bi2Se3: AgxBi2Se3 and Bi2-xAgxSe3

NASA Astrophysics Data System (ADS)

Zhang, Min; Wei, Zhan-Tao

2018-05-01

Ag-doped Bi2Se3 with the formula AgxBi2Se3 and Bi2-xAgxSe3 were prepared and their electrical and magnetic transport properties have been investigated to study the influence of silver doping on transport properties of Bi2Se3 with different Ag-doped method. All samples exhibited metallic resistivity and the resistivity increased with increasing Ag concentration. The lattice parameter c of Ag-substituted and Ag-intercalated samples displays a contrary change as the Ag concentration increased. For the Ag-intercalated samples, both the resistance upturn were observed in the curves of temperature dependent of resistivity and temperature dependent of magnetoresistance, respectively, indicating that the enhanced surface effect was obtained in those samples. Monotonously, field-induced MR peaks around 200 K were also observed in those samples. Similar behaviors were not observed in the Ag-substituted samples.

Dual patch voltage clamp study of low membrane resistance astrocytes in situ.

PubMed

Ma, Baofeng; Xu, Guangjin; Wang, Wei; Enyeart, John J; Zhou, Min

2014-03-17

Whole-cell patch clamp recording has been successfully used in identifying the voltage-dependent gating and conductance properties of ion channels in a variety of cells. However, this powerful technique is of limited value in studying low membrane resistance cells, such as astrocytes in situ, because of the inability to control or accurately measure the real amplitude of command voltages. To facilitate the study of ionic conductances of astrocytes, we have developed a dual patch recording method which permits membrane current and membrane potential to be simultaneously recorded from astrocytes in spite of their extraordinarily low membrane resistance. The utility of this technique is demonstrated by measuring the voltage-dependent activation of the inwardly rectifying K+ current abundantly expressed in astrocytes and multiple ionic events associated with astrocytic GABAA receptor activation. This protocol can be performed routinely in the study of astrocytes. This method will be valuable for identifying and characterizing the individual ion channels that orchestrate the electrical activity of low membrane resistance cells.

The Electrical and Thermal Conductivity of Woven Pristine and Intercalated Graphite Fiber-Polymer Composites

NASA Technical Reports Server (NTRS)

Gaier, James R.; Vandenburg, Yvonne Yoder; Berkebile, Steven; Stueben, Heather; Balagadde, Frederick

2002-01-01

A series of woven fabric laminar composite plates and narrow strips were fabricated from a variety of pitch-based pristine and bromine intercalated graphite fibers in an attempt to determine the influence of the weave on the electrical and thermal conduction. It was found generally that these materials can be treated as if they are homogeneous plates. The rule of mixtures describes the resistivity of the composite fairly well if it is realized that only the component of the fibers normal to the equipotential surface will conduct current. When the composite is narrow with respect to the fiber weave, however, there is a marked angular dependence of the resistance which was well modeled by assuming that the current follows only along the fibers (and not across them in a transverse direction), and that the contact resistance among the fibers in the composite is negligible. The thermal conductivity of composites made from less conductive fibers more closely followed the rule of mixtures than that of the high conductivity fibers, though this is thought to be an artifact of the measurement technique. Electrical and thermal anisotropy could be induced in a particular region of the structure by weaving together high and low conductivity fibers in different directions, though this must be done throughout all of the layers of the structure as interlaminar conduction precludes having only the top layer carry the anisotropy. The anisotropy in the thermal conductivity is considerably less than either that predicted by the rule of mixtures or the electrical resistivity.

Application of electrical resistivity tomography techniques for mapping man-made sinkholes

NASA Astrophysics Data System (ADS)

Rey, J.; Martínez, J.; Hidalgo, C.; Dueñas, J.

2012-04-01

The suitability of the geophysical prospecting by electrical resistivity tomography to detect and map man-made subsurface cavities and related sinkholes has been studied in the Linares abandoned mining district (Spain). We have selected for this study four mined sectors constituted of different lithologies: granite and phyllites of Paleozoic age, and Triassic shales and sandstones. In three of these sectors, detail underground topographic surveys were carried out to chart the position and dimensions of the mining voids (galleries and chamber), in order to analyze the resolution of this methodology to characterize these cavities by using different electrode arrays. The results are variable, depending on the depth and diameter of the void, the selected electrode array, the spacing between electrodes, geological complexity and data density. These results also indicate that when the cavity is empty, an anomaly with a steep gradient and high resistivity values is registered, because the air that fills the mining void is dielectric, while when the cavities are filled with fine grain sediments, frequently saturated in water, the electrical resistance is lower. In relation with the three different multi-electrode arrays tested, the Wenner-Schlumberger array has resulted to offer the maximum resolution in all these cases, with lower and more stable values for the RMS than the other arrays. Therefore, this electrode array has been applied in the fourth studied sector, a former mine near the city centre of Linares, in an area of urban expansion in which there are problems of subsidence. Two sets of four electrical tomography profiles have been carried out, perpendicular to each other, and which have allowed reaching depths of research between 30-35 m. This net-array allowed the identification of two shallow anomalies of low resistivity values, interpreted as old mining galleries filled with fine material saturated in water. It also allows detecting two fractures, correlated in the profiles and which can be mapped to more than 25 m in depth. As showed by this case study, electrical resistivity tomography can be a suitable tool in sub-surface cavities detection and man-made sinkhole investigations.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity wasmore » measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.« less

UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

2016-08-01

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.

Quantifying shallow subsurface water and heat dynamics using coupled hydrological-thermal-geophysical inversion

DOE PAGES

Tran, Anh Phuong; Dafflon, Baptiste; Hubbard, Susan S.; ...

2016-04-25

Improving our ability to estimate the parameters that control water and heat fluxes in the shallow subsurface is particularly important due to their strong control on recharge, evaporation and biogeochemical processes. The objectives of this study are to develop and test a new inversion scheme to simultaneously estimate subsurface hydrological, thermal and petrophysical parameters using hydrological, thermal and electrical resistivity tomography (ERT) data. The inversion scheme-which is based on a nonisothermal, multiphase hydrological model-provides the desired subsurface property estimates in high spatiotemporal resolution. A particularly novel aspect of the inversion scheme is the explicit incorporation of the dependence of themore » subsurface electrical resistivity on both moisture and temperature. The scheme was applied to synthetic case studies, as well as to real datasets that were autonomously collected at a biogeochemical field study site in Rifle, Colorado. At the Rifle site, the coupled hydrological-thermal-geophysical inversion approach well predicted the matric potential, temperature and apparent resistivity with the Nash-Sutcliffe efficiency criterion greater than 0.92. Synthetic studies found that neglecting the subsurface temperature variability, and its effect on the electrical resistivity in the hydrogeophysical inversion, may lead to an incorrect estimation of the hydrological parameters. The approach is expected to be especially useful for the increasing number of studies that are taking advantage of autonomously collected ERT and soil measurements to explore complex terrestrial system dynamics.« less

Effect of Humid Aging on the Oxygen Adsorption in SnO₂ Gas Sensors.

PubMed

Suematsu, Koichi; Ma, Nan; Watanabe, Ken; Yuasa, Masayoshi; Kida, Tetsuya; Shimanoe, Kengo

2018-01-16

To investigate the effect of aging at 580 °C in wet air (humid aging) on the oxygen adsorption on the surface of SnO₂ particles, the electric properties and the sensor response to hydrogen in dry and humid atmospheres for SnO₂ resistive-type gas sensors were evaluated. The electric resistance in dry and wet atmospheres at 350 °C was strongly increased by humid aging. From the results of oxygen partial pressure dependence of the electric resistance, the oxygen adsorption equilibrium constants ( K ₁; for O - adsorption, K ₂; for O 2- adsorption) were estimated on the basis of the theoretical model of oxygen adsorption. The K ₁ and K ₂ in dry and wet atmospheres at 350 °C were increased by humid aging at 580 °C, indicating an increase in the adsorption amount of both O - and O 2- . These results suggest that hydroxyl poisoning on the oxygen adsorption is suppressed by humid aging. The sensor response to hydrogen in dry and wet atmosphere at 350 °C was clearly improved by humid aging. Such an improvement of the sensor response seems to be caused by increasing the oxygen adsorption amount. Thus, the humid aging offers an effective way to improve the sensor response of SnO₂ resistive-type gas sensors in dry and wet atmospheres.

Theoretical relationship between elastic wave velocity and electrical resistivity

NASA Astrophysics Data System (ADS)

Lee, Jong-Sub; Yoon, Hyung-Koo

2015-05-01

Elastic wave velocity and electrical resistivity have been commonly applied to estimate stratum structures and obtain subsurface soil design parameters. Both elastic wave velocity and electrical resistivity are related to the void ratio; the objective of this study is therefore to suggest a theoretical relationship between the two physical parameters. Gassmann theory and Archie's equation are applied to propose a new theoretical equation, which relates the compressional wave velocity to shear wave velocity and electrical resistivity. The piezo disk element (PDE) and bender element (BE) are used to measure the compressional and shear wave velocities, respectively. In addition, the electrical resistivity is obtained by using the electrical resistivity probe (ERP). The elastic wave velocity and electrical resistivity are recorded in several types of soils including sand, silty sand, silty clay, silt, and clay-sand mixture. The appropriate input parameters are determined based on the error norm in order to increase the reliability of the proposed relationship. The predicted compressional wave velocities from the shear wave velocity and electrical resistivity are similar to the measured compressional velocities. This study demonstrates that the new theoretical relationship may be effectively used to predict the unknown geophysical property from the measured values.

“Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

PubMed Central

Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

2015-01-01

Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

Investigation of structural and electrical properties of La{sub 0.7}(Ba{sub 1-x}Ca{sub x}){sub 0.3}MnO{sub 3} compounds by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Winarsih, Suci; Kurniawan, Budhy, E-mail: bkuru07@gmail.com; Manaf, Azwar

2016-06-17

In this paper, we explored structural and electrical properties of La{sub 0.7}(Ba{sub 1-x}Ca{sub x}){sub 0.3}MnO{sub 3} (x = 0; 0.03; and 0.05) compounds. The general structure of perovskite manganites is AMnO{sub 3} (A= trivalent rare earth with divalent ion-doped). Average A-site cation size, external pressure, and the variance of the cation size σ{sup 2} are one of many factors that affected to magneto-transport properties of manganites as reported by others. In this work we focus only on the electrical properties in La{sub 0.7}Ba{sub 0.3}MnO{sub 3} Ca-doped compound which may influence crystal structure resulting resistivity phenomena under magnetic field influence. Allmore » samples were synthesized by sol-gel method from which fine powders were obtained. The X-ray powder diffraction pattern of powder materials shows that all samples are fully crystalline with a rhombohedral structure. Rietveld refinement shows that the presence of calcium has changed some crystal structural parameters such lattice parameter, Mn–O bond length, and Mn–O–Mn angles. The electrical resistivity of all synthesized materials investigated by four point probe method using Cryogenic Magnet in the temperature range of 50-300 K under influence a magnetic field shows resistivity temperature dependent. In fact presence of calcium has reduced the resistivity. It might occure because it has made an enhancement in the mobility of hopping electrons. The magnetic external field causes the resistivity decreased for all samples because host spin align by delocalizing the charge carries so electron itinerant through the lattice suggested by other authors. Both calcium dopant concentration and the applied external magnetic field shows strong correlation in reduction of resistivity.« less

Transport Properties and Magnetoresistance of La0.8Ca0.13Ag0.07MnO3 Perovskite Manganite Synthesized by Sol-Gel Method

NASA Astrophysics Data System (ADS)

Kurniawan, B.; Ruli, F.; Imaduddin, A.; Kamila, R.

2018-05-01

In this paper, we investigate the transport properties and magnetoresistance effect of La0.8Ca0.13Ag0.07MnO3 perovskite manganite synthesized by sol-gel method. The XRD pattern of the sample shows a rhombohedral perovskite structure with space group R3¯c. The EDX analysis confirms that the sample contains all expected chemical elements without any additional impurity. The temperature dependence of electrical resistivity was measured using a cryogenic magnetometer. The results show a metal-insulator transition temperature (TM-I ) at 280 K. The resistivity of the sample increases with an increase of temperature below TM-I . Theoretical analyses of the temperature dependence of resistivity suggest that the resistivity due to electron-electron scattering is predominant below TI-M. The resistivity of the sample decreases when applied magnetic field 1 T at a temperature range of 10 K to 300 K. The magnetoresistance of La0.8Ca0.13Ag0.07MnO3 emanates from spin-polarized tunneling process at the grain boundary.

State Waste Discharge Permit Application: Electric resistance tomography testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1994-04-01

This permit application documentation is for a State Waste Discharge Permit issued in accordance with requirements of Washington Administrative Code 173-216. The activity being permitted is a technology test using electrical resistance tomography. The electrical resistance tomography technology was developed at Lawrence Livermore National Laboratory and has been used at other waste sites to track underground contamination plumes. The electrical resistance tomography technology measures soil electrical resistance between two electrodes. If a fluid contaminated with electrolytes is introduced into the soil, the soil resistance is expected to drop. By using an array of measurement electrodes in several boreholes, the arealmore » extent of contamination can be estimated. At the Hanford Site, the purpose of the testing is to determine if the electrical resistance tomography technology can be used in the vicinity of large underground metal tanks without the metal tank interfering with the test. It is anticipated that the electrical resistance tomography technology will provide a method for accurately detecting leaks from the bottom of underground tanks, such as the Hanford Site single-shell tanks.« less

Surface electric fields for North America during historical geomagnetic storms

USGS Publications Warehouse

Wei, Lisa H.; Homeier, Nichole; Gannon, Jennifer L.

2013-01-01

To better understand the impact of geomagnetic disturbances on the electric grid, we recreate surface electric fields from two historical geomagnetic storms—the 1989 “Quebec” storm and the 2003 “Halloween” storms. Using the Spherical Elementary Current Systems method, we interpolate sparsely distributed magnetometer data across North America. We find good agreement between the measured and interpolated data, with larger RMS deviations at higher latitudes corresponding to larger magnetic field variations. The interpolated magnetic field data are combined with surface impedances for 25 unique physiographic regions from the United States Geological Survey and literature to estimate the horizontal, orthogonal surface electric fields in 1 min time steps. The induced horizontal electric field strongly depends on the local surface impedance, resulting in surprisingly strong electric field amplitudes along the Atlantic and Gulf Coast. The relative peak electric field amplitude of each physiographic region, normalized to the value in the Interior Plains region, varies by a factor of 2 for different input magnetic field time series. The order of peak electric field amplitudes (largest to smallest), however, does not depend much on the input. These results suggest that regions at lower magnetic latitudes with high ground resistivities are also at risk from the effect of geomagnetically induced currents. The historical electric field time series are useful for estimating the flow of the induced currents through long transmission lines to study power flow and grid stability during geomagnetic disturbances.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Agmore » interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.« less

Thermally efficient and highly scalable In2Se3 nanowire phase change memory

NASA Astrophysics Data System (ADS)

Jin, Bo; Kang, Daegun; Kim, Jungsik; Meyyappan, M.; Lee, Jeong-Soo

2013-04-01

The electrical characteristics of nonvolatile In2Se3 nanowire phase change memory are reported. Size-dependent memory switching behavior was observed in nanowires of varying diameters and the reduction in set/reset threshold voltage was as low as 3.45 V/6.25 V for a 60 nm nanowire, which is promising for highly scalable nanowire memory applications. Also, size-dependent thermal resistance of In2Se3 nanowire memory cells was estimated with values as high as 5.86×1013 and 1.04×106 K/W for a 60 nm nanowire memory cell in amorphous and crystalline phases, respectively. Such high thermal resistances are beneficial for improvement of thermal efficiency and thus reduction in programming power consumption based on Fourier's law. The evaluation of thermal resistance provides an avenue to develop thermally efficient memory cell architecture.

Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film

NASA Astrophysics Data System (ADS)

Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Y. F.; Yu, Q.; Li, P.; Fung, S.

2011-12-01

The resistive switching device based on a Ni-rich nickel oxide thin film exhibits an inherent learning ability of a neural network. The device has the short-term-memory and long-term-memory functions analogous to those of the human brain, depending on the history of its experience of voltage pulsing or sweeping. Neuroplasticity could be realized with the device, as the device can be switched from a high-resistance state to a low-resistance state due to the formation of stable filaments by a series of electrical pulses, resembling the changes such as the growth of new connections and the creation of new neurons in the brain in response to experience.

Carrier Transport and Effective Barrier Height of Low Resistance Metal Contact to Highly Mg-Doped p-GaN

NASA Astrophysics Data System (ADS)

Park, Youngjun; Kim, Hyunsoo

2011-08-01

The effective barrier height and carrier transport mechanism of low resistance Ag-based contact to highly Mg-doped p-GaN were investigated. The specific contact resistance obtained was as low as 7.0×10-4 Ω cm2. The electrical resistivity of p-GaN was found to increase depending on ˜T-1/4, indicating variable-range hopping (VRH) conduction through Mg-related deep-level defects. Based on the VRH conduction model, the effective barrier height for carrier transport could be measured as 0.12 eV, which is low enough to explain the formation of excellent ohmic contact. The deep-level defects were also found to induce surface Fermi pinning.

Tuning the gas sensing performance of single PEDOT nanowire devices.

PubMed

Hangarter, Carlos M; Hernandez, Sandra C; He, Xueing; Chartuprayoon, Nicha; Choa, Yong Ho; Myung, Nosang V

2011-06-07

This paper reports the synthesis and dopant dependent electrical and sensing properties of single poly(ethylenedioxythiophene) (PEDOT) nanowire sensors. Dopant type (i.e. polystyrenesulfonate (PSS(-)) and perchlorate (ClO(4)(-))) and solvent (i.e. acetonitrile and 1 : 1 water-acetonitrile mixture) were adjusted to change the conjugation length and hydrophilicity of nanowires which resulted in change of the electrical properties and sensing performance. Temperature dependent coefficient of resistance (TCR) indicated that the electrical properties are greatly dependent on dopants and electrolyte where greater disorder was found in PSS(-) doped PEDOT nanowires compared to ClO(4)(-) doped nanowires. Upon exposure to different analytes including water vapor and volatile organic compounds, these nanowire devices displayed substantially different sensing characteristics. ClO(4)(-) doped PEDOT nanowires from an acetonitrile bath show superior sensing responses toward less electronegative analytes and followed a power law dependence on the analyte concentration at high partial pressures. These tunable sensing properties were attributed to variation in the conjugation lengths, dopant type and concentration of the wires which may be attributed to two distinct sensing mechanisms: swelling within the bulk of the nanowire and work function modulation of Schottky barrier junction between nanowire and electrodes.

Selective Laser Sintering of Conductive Inks for Inkjet Printing Based on Nanoparticle Compositions with Organic Silver Salts

NASA Astrophysics Data System (ADS)

Titkov, A. I.; Gadirov, R. M.; Nikonov, S. Yu.; Odod, A. V.; Solodova, T. A.; Kurtсevich, A. E.; Kopylova, T. N.; Yukhin, Yu. M.; Lyakhov, N. Z.

2018-02-01

Inkjet ink based on silver nanoparticles with sizes of 11.1 ± 2.4 nm has been developed. Test images are printed on a laboratory inkjet printer, followed by sintering the printed patterns with a diode laser having a wavelength of 453 nm. The structure and electrical properties of the resulting films are studied depending on the parameters of laser sintering. It is found that under optimal conditions, an electrically conductive film with a low resistivity of 12.2 μΩ· cm can be formed.

Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor

NASA Astrophysics Data System (ADS)

Kanaki, Toshiki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2016-10-01

We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet/nonferromagnet/ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.

Influence of Electrical Resistivity and Machining Parameters on Electrical Discharge Machining Performance of Engineering Ceramics

PubMed Central

Ji, Renjie; Liu, Yonghong; Diao, Ruiqiang; Xu, Chenchen; Li, Xiaopeng; Cai, Baoping; Zhang, Yanzhen

2014-01-01

Engineering ceramics have been widely used in modern industry for their excellent physical and mechanical properties, and they are difficult to machine owing to their high hardness and brittleness. Electrical discharge machining (EDM) is the appropriate process for machining engineering ceramics provided they are electrically conducting. However, the electrical resistivity of the popular engineering ceramics is higher, and there has been no research on the relationship between the EDM parameters and the electrical resistivity of the engineering ceramics. This paper investigates the effects of the electrical resistivity and EDM parameters such as tool polarity, pulse interval, and electrode material, on the ZnO/Al2O3 ceramic's EDM performance, in terms of the material removal rate (MRR), electrode wear ratio (EWR), and surface roughness (SR). The results show that the electrical resistivity and the EDM parameters have the great influence on the EDM performance. The ZnO/Al2O3 ceramic with the electrical resistivity up to 3410 Ω·cm can be effectively machined by EDM with the copper electrode, the negative tool polarity, and the shorter pulse interval. Under most machining conditions, the MRR increases, and the SR decreases with the decrease of electrical resistivity. Moreover, the tool polarity, and pulse interval affect the EWR, respectively, and the electrical resistivity and electrode material have a combined effect on the EWR. Furthermore, the EDM performance of ZnO/Al2O3 ceramic with the electrical resistivity higher than 687 Ω·cm is obviously different from that with the electrical resistivity lower than 687 Ω·cm, when the electrode material changes. The microstructure character analysis of the machined ZnO/Al2O3 ceramic surface shows that the ZnO/Al2O3 ceramic is removed by melting, evaporation and thermal spalling, and the material from the working fluid and the graphite electrode can transfer to the workpiece surface during electrical discharge machining ZnO/Al2O3 ceramic. PMID:25364912

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

NASA Astrophysics Data System (ADS)

Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

2017-10-01

Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

NASA Astrophysics Data System (ADS)

Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

2017-09-01

High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

Electrical condition monitoring method for polymers

DOEpatents

Watkins, Jr., Kenneth S.; Morris, Shelby J [Hampton, VA; Masakowski, Daniel D [Worcester, MA; Wong, Ching Ping [Duluth, GA; Luo, Shijian [Boise, ID

2008-08-19

An electrical condition monitoring method utilizes measurement of electrical resistivity of an age sensor made of a conductive matrix or composite disposed in a polymeric structure such as an electrical cable. The conductive matrix comprises a base polymer and conductive filler. The method includes communicating the resistivity to a measuring instrument and correlating resistivity of the conductive matrix of the polymeric structure with resistivity of an accelerated-aged conductive composite.

Study of thermal stability of Cu{sub 2}Se thermoelectric material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bohra, Anil, E-mail: anilbohra786@gmail.com; Bhatt, Ranu; Bhattacharya, Shovit

2016-05-23

Sustainability of thermoelectric parameter in operating temperature range is a key consideration factor for fabricating thermoelectric generator or cooler. In present work, we have studied the stability of thermoelectric parameter of Cu{sub 2}Se within the temperature range of 50-800°C. Temperature dependent Seebeck coefficients and electrical resistivity measurement are performed under three continuous thermal cycles. X-ray diffraction pattern shows the presence of mixed cubic-monoclinic Cu{sub 2}Se phase in bare pellet which transforms to pure α-Cu{sub 2}Se phase with repeating thermal cycle. Significant enhancement in Seebeck coefficient and electrical resistivity is observed which may be attributed to (i) Se loss observed inmore » EDS and (ii) the phase transformation from mixed cubic-monoclinic structure to pure monoclinic α-Cu{sub 2}Se phase.« less

Simplifications in modelling of dynamical response of coupled electro-mechanical system

NASA Astrophysics Data System (ADS)

Darula, Radoslav; Sorokin, Sergey

2016-12-01

The choice of a most suitable model of an electro-mechanical system depends on many variables, such as a scale of the system, type and frequency range of its operation, or power requirements. The article focuses on the model of the electromagnetic element used in passive regime (no feedback loops are assumed) and a general lumped parameter model (a conventional mass-spring-damper system coupled to an electric circuit consisting of a resistance, an inductance and a capacitance) is compared with its simplified version, where the full RLC circuit is replaced with its RL simplification, i.e. the capacitance of the electric system is neglected and just its inductance and the resistance are considered. From the comparison of dynamical responses of these systems, the range of applicability of a simplified model is assessed for free as well as forced vibration.

Sputtered deposited nanocrystalline ZnO films: A correlation between electrical, optical and microstructural properties

NASA Astrophysics Data System (ADS)

Lee, J.; Gao, W.; Li, Z.; Hodgson, M.; Metson, J.; Gong, H.; Pal, U.

2005-05-01

Zinc oxide thin films were prepared by dc (direct current) and rf (radio frequency) magnetron sputtering on glass substrates. ZnO films produced by dc sputtering have a high resistance, while the films produced using rf sputtering are significantly more conductive. While the conductive films have a compact nodular surface morphology, the resistive films have a relatively porous surface with columnar structures in cross section. Compared to the dc sputtered films, rf sputtered films have a microstructure with smaller d spacing, lower internal stress, higher band gap energy and higher density. Dependence of conductivity on the deposition technique and the resulting d spacing , stress, density, band gap, film thickness and Al doping are discussed. Correlations between the electrical conductivity, microstructural parameters and optical properties of the films have been made.

A one-dimensional model of solid-earth electrical resistivity beneath Florida

USGS Publications Warehouse

Blum, Cletus; Love, Jeffrey J.; Pedrie, Kolby; Bedrosian, Paul A.; Rigler, E. Joshua

2015-11-19

An estimated one-dimensional layered model of electrical resistivity beneath Florida was developed from published geological and geophysical information. The resistivity of each layer is represented by plausible upper and lower bounds as well as a geometric mean resistivity. Corresponding impedance transfer functions, Schmucker-Weidelt transfer functions, apparent resistivity, and phase responses are calculated for inducing geomagnetic frequencies ranging from 10−5 to 100 hertz. The resulting one-dimensional model and response functions can be used to make general estimates of time-varying electric fields associated with geomagnetic storms such as might represent induction hazards for electric-power grid operation. The plausible upper- and lower-bound resistivity structures show the uncertainty, giving a wide range of plausible time-varying electric fields.

Low-frequency electrical properties of peat

NASA Astrophysics Data System (ADS)

Comas, Xavier; Slater, Lee

2004-12-01

Electrical resistivity/induced polarization (0.1-1000 Hz) and vertical hydraulic conductivity (Kv) measurements of peat samples extracted from different depths (0-11 m) in a peatland in Maine were obtained as a function of pore fluid conductivity (σw) between 0.001 and 2 S/m. Hydraulic conductivity increased with σw (Kv ∝ σw0.3 between 0.001 and 2 S/m), indicating that pore dilation occurs due to the reaction of NaCl with organic functional groups as postulated by previous workers. Electrical measurements were modeled by assuming that "bulk" electrolytic conduction through the interconnected pore space and surface conduction in the electrical double layer (EDL) at the organic sediment-fluid interface act in parallel. This analysis suggests that pore space dilation causes a nonlinear relationship between the "bulk" electrolytic conductivity (σel) and σw (σel ∝ σw1.3). The Archie equation predicts a linear dependence of σel on σw and thus appears inappropriate for organic sediments. Induced polarization (IP) measurements of the imaginary part (σ″surf) of the surface conductivity (σ*surf) show that σ″surf is greater and more strongly σw-dependent (σ″surf ∝ σw0.5 between 0.001 and 2 S/m) than observed for inorganic sediments. By assuming a linear relationship between the real (σ'surf) and the imaginary part (σ″surf) of the surface conductivity, we develop an empirical model relating the resistivity and induced polarization measurements to σw in peat. We demonstrate the use of this model to predict (a) σw and (b) the change in Kv due to an incremental change in σw from resistivity and induced polarization measurements on organic sediments. Our study has implications for noninvasive geophysical characterization of σw and Kv with potential to benefit studies of carbon cycling and greenhouse gas fluxes as well as nutrient supply dynamics in peatlands.

Investigation of titanium-nitride layers for solar-cell contacts

NASA Technical Reports Server (NTRS)

Von Seefeld, H.; Cheung, N. W.; Nicolet, M.-A.; Maenpaa, M.

1980-01-01

Reactively sputtered titanium-nitride layers have been incorporated as diffusion barriers in a titanium-silver metallization scheme on silicon. Backscattering analysis (2-MeV He/+/, RBS) indicates that the integrity of the system is basically preserved during annealing at 600 C for 10 min. Electrical properties were determined for titanium-nitride layers prepared under different deposition conditions. Resistivity and Hall mobility appear to depend on the oxygen contamination of the deposited material. For the lowest oxygen concentration (less than 5 at %) a resistivity of 170 microohms/cm has been found.

Coulomb-Gas scaling law for a superconducting Bi(2+y)Sr(2-x-y)La(x)CuO(6+delta) thin films in magnetic fields

PubMed

Zhang; Deltour; Zhao

2000-10-16

The electrical transport properties of epitaxial superconducting Bi(2+y)Sr(2-x-y)La(x)CuO(6+delta) thin films have been studied in magnetic fields. Using a modified Coulomb-gas scaling law, we can fit all the magnetic field dependent low resistance data with a universal scaling curve, which allows us to determine a relation between the activation energy of the thermally activated flux flow resistance and the characteristic temperature scaling parameters.

Statistical analysis for understanding and predicting battery degradations in real-life electric vehicle use

NASA Astrophysics Data System (ADS)

Barré, Anthony; Suard, Frédéric; Gérard, Mathias; Montaru, Maxime; Riu, Delphine

2014-01-01

This paper describes the statistical analysis of recorded data parameters of electrical battery ageing during electric vehicle use. These data permit traditional battery ageing investigation based on the evolution of the capacity fade and resistance raise. The measured variables are examined in order to explain the correlation between battery ageing and operating conditions during experiments. Such study enables us to identify the main ageing factors. Then, detailed statistical dependency explorations present the responsible factors on battery ageing phenomena. Predictive battery ageing models are built from this approach. Thereby results demonstrate and quantify a relationship between variables and battery ageing global observations, and also allow accurate battery ageing diagnosis through predictive models.

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

PubMed

Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

Disorder induced magnetism and electrical conduction in La doped Ca2FeMoO6 double perovskite

NASA Astrophysics Data System (ADS)

Poddar, Asok; Bhowmik, R. N.; Muthuselvam, I. Panneer

2010-11-01

We report the magnetism and electrical transport properties of La doped Ca2FeMoO6 double perovskite. Reduction in magnetic moment, nonmonotonic variation in magnetic ordering temperature (TC), increasing magnetic hardness, low temperature resistivity upturn, and loss of metallic conductivity are some of the major changes that we observed due to La doping induced disorder in double perovskite structure. The increase in magnetic disorder in La doped samples and its effect on TC is more consistent with the mean field theory. The modification in electronic band structure due to La doping is understood by establishing a correlation between the temperature dependence of electrical conductivity and thermoelectric power.

The study of the dynamics of erythrocytes under the influence of an external electric field

NASA Astrophysics Data System (ADS)

Mamaeva, Sargylana N.; Maksimov, Georgy V.; Antonov, Stepan R.

2017-11-01

A mathematical model is considered for the determination of the surface charge of an erythrocyte with its shape approximated by a surface of revolution of the second order, and the investigation of the dynamics of erythrocytes under the influence of an external electric field. In the first part of this work, the electrical surface charge of the erythrocyte of the patient was calculated with the assumption that the change in the shape and size of the red blood cells leads to stabilization of the electric field, providing a normal electrostatic repulsion. In the second part of the work, the research results of dynamics of changes in the morphology of erythrocytes under the influence of an external electric field depending on the values of their surface charge and resistance of blood plasma is presented. In the course of the work, the dependence of the surface charge of red blood cells from their shape and size is presented. The determination of the relationship between the value of the charge field and the surface of erythrocytes in norm and in pathology is shown. The dependence of the velocity of the erythrocytes on the characteristics of the external electric field, surface charge of the erythrocyte and properties of the medium is obtained. The results of this study can be applied indirectly to diagnose diseases and to develop recommendations for experimental studies of hemodynamics under the influence of various external physical factors.

Monitoring the mechanical behaviour of electrically conductive polymer nanocomposites under ramp and creep conditions.

PubMed

Pedrazzoli, D; Dorigato, A; Pegoretti, A

2012-05-01

Various amounts of carbon black (CB) and carbon nanofibres (CNF) were dispersed in an epoxy resin to prepare nanocomposites whose mechanical behaviour, under ramp and creep conditions, was monitored by electrical measurements. The electrical resistivity of the epoxy resin was dramatically reduced by both nanofillers after the percolation threshold (1 wt% for CB and 0.5 wt% for CNF), reaching values in the range of 10(3)-10(4) omega . cm for filler loadings higher than 2 wt%. Due to the synergistic effects between the nanofillers, an epoxy system containing a total nanofiller amount of 2 wt%, with a relative CB/CNF ratio of 90/10 was selected for the specific applications. A direct correlation between the tensile strain and the increase of the electrical resistance was observed over the whole experimental range, and also the final failure of the samples was clearly detected. Creep tests confirmed the possibility to monitor the various deformational stages under constant loads, with a strong dependency from the temperature and the applied stress. The obtained results are encouraging for a possible application of nanomodified epoxy resin as a matrix for the preparation of structural composites with sensing (i.e., damage-monitoring) capabilities.

Ultraviolet laser-induced voltage in anisotropic shale

NASA Astrophysics Data System (ADS)

Miao, Xinyang; Zhu, Jing; Li, Yizhang; Zhao, Kun; Zhan, Honglei; Yue, Wenzheng

2018-01-01

The anisotropy of shales plays a significant role in oil and gas exploration and engineering. Owing to various problems and limitations, anisotropic properties were seldom investigated by direct current resistivity methods. Here in this work, a 248 nm ultraviolet laser was employed to assess the anisotropic electrical response of a dielectric shale. Angular dependence of laser-induced voltages (V p) were obtained, with a data symmetry at the location of 180° and a ~62.2% V p anisotropy of the sample. The double-exponential functions have provided an explanation for the electrical field controlled carrier transportation process in horizontal and vertical directions. The results demonstrate that the combination of optics and electrical logging analysis (Opti-electrical Logging) is a promising technology for the investigation of unconventional reservoirs.

Transverse conductivity of a relativistic plasma in oblique electric and magnetic fields

NASA Technical Reports Server (NTRS)

Melia, Fulvio; Fatuzzo, Marco

1991-01-01

Resistive tearing in a primary candidate for flares occurring in stressed magnetic fields. Its possible application to the strongly magnetized environments (Hz about 10 to the 12th G) near the surface of neutron stars, particularly as a mechanism for generating the plasma heating and particle acceleration leading to gamma-ray bursts, has motivated a quantum treatment of this process, which requires knowledge of the electrical conductivity sigma of a relativistic gas in a new domain (i.e., that of a low-density n/e/) plasma in oblique electric and magnetic fields. This paper discusses the mathematical formalism for calculating sigma and present numerical results for a wide range of parameter values. The results indicate that sigma depends very strongly on both the applied electric and magnetic fields.

Use of electrical resistivity to detect underground mine voids in Ohio

USGS Publications Warehouse

Sheets, Rodney A.

2002-01-01

Electrical resistivity surveys were completed at two sites along State Route 32 in Jackson and Vinton Counties, Ohio. The surveys were done to determine whether the electrical resistivity method could identify areas where coal was mined, leaving air- or water-filled voids. These voids can be local sources of potable water or acid mine drainage. They could also result in potentially dangerous collapse of roads or buildings that overlie the voids. The resistivity response of air- or water-filled voids compared to the surrounding bedrock may allow electrical resistivity surveys to delineate areas underlain by such voids. Surface deformation along State Route 32 in Jackson County led to a site investigation, which included electrical resistivity surveys. Several highly resistive areas were identified using axial dipole-dipole and Wenner resistivity surveys. Subsequent drilling and excavation led to the discovery of several air-filled abandoned underground mine tunnels. A site along State Route 32 in Vinton County, Ohio, was drilled as part of a mining permit application process. A mine void under the highway was instrumented with a pressure transducer to monitor water levels. During a period of high water level, electrical resistivity surveys were completed. The electrical response was dominated by a thin, low-resistivity layer of iron ore above where the coal was mined out. Nearby overhead powerlines also affected the results.

Anomalous solute transport in saturated porous media: Relating transport model parameters to electrical and nuclear magnetic resonance properties

USGS Publications Warehouse

Swanson, Ryan D; Binley, Andrew; Keating, Kristina; France, Samantha; Osterman, Gordon; Day-Lewis, Frederick D.; Singha, Kamini

2015-01-01

The advection-dispersion equation (ADE) fails to describe commonly observed non-Fickian solute transport in saturated porous media, necessitating the use of other models such as the dual-domain mass-transfer (DDMT) model. DDMT model parameters are commonly calibrated via curve fitting, providing little insight into the relation between effective parameters and physical properties of the medium. There is a clear need for material characterization techniques that can provide insight into the geometry and connectedness of pore spaces related to transport model parameters. Here, we consider proton nuclear magnetic resonance (NMR), direct-current (DC) resistivity, and complex conductivity (CC) measurements for this purpose, and assess these methods using glass beads as a control and two different samples of the zeolite clinoptilolite, a material that demonstrates non-Fickian transport due to intragranular porosity. We estimate DDMT parameters via calibration of a transport model to column-scale solute tracer tests, and compare NMR, DC resistivity, CC results, which reveal that grain size alone does not control transport properties and measured geophysical parameters; rather, volume and arrangement of the pore space play important roles. NMR cannot provide estimates of more-mobile and less-mobile pore volumes in the absence of tracer tests because these estimates depend critically on the selection of a material-dependent and flow-dependent cutoff time. Increased electrical connectedness from DC resistivity measurements are associated with greater mobile pore space determined from transport model calibration. CC was hypothesized to be related to length scales of mass transfer, but the CC response is unrelated to DDMT.

Compact Method for Modeling and Simulation of Memristor Devices

DTIC Science & Technology

2011-08-01

single-valued equations. 15. SUBJECT TERMS Memristor, Neuromorphic , Cognitive, Computing, Memory, Emerging Technology, Computational Intelligence 16...resistance state depends on its previous state and present electrical biasing conditions, and when combined with transistors in a hybrid chip ...computers, reconfigurable electronics and neuromorphic computing [3,4]. According to Chua [4], the memristor behaves like a linear resistor with

Evolution of the electrical resistivity anisotropy during saline tracer tests: insights from geoelectrical milli-fluidic experiments

NASA Astrophysics Data System (ADS)

Jougnot, D.; Jimenez-Martinez, J.; Legendre, R.; Le Borgne, T.; Meheust, Y.; Linde, N.

2017-12-01

The use of time-lapse electrical resistivity tomography has been largely developed in environmental studies to remotely monitor water saturation and contaminant plumes migration. However, subsurface heterogeneities, and corresponding preferential transport paths, yield a potentially large anisotropy in the electrical properties of the subsurface. In order to study this effect, we have used a newly developed geoelectrical milli-fluidic experimental set-up with a flow cell that contains a 2D porous medium consisting of a single layer of cylindrical solid grains. We performed saline tracer tests under full and partial water saturations in that cell by jointly injecting air and aqueous solutions with different salinities. The flow cell is equipped with four electrodes to measure the bulk electrical resistivity at the cell's scale. The spatial distribution of the water/air phases and the saline solute concentration field in the water phase are captured simultaneously with a high-resolution camera by combining a fluorescent tracer with the saline solute. These data are used to compute the longitudinal and transverse effective electrical resistivity numerically from the measured spatial distributions of the fluid phases and the salinity field. This approach is validated as the computed longitudinal effective resistivities are in good agreement with the laboratory measurements. The anisotropy in electrical resistivity is then inferred from the computed longitudinal and transverse effective resistivities. We find that the spatial distribution of saline tracer, and potentially air phase, drive temporal changes in the effective resistivity through preferential paths or barriers for electrical current at the pore scale. The resulting heterogeneities in the solute concentrations lead to strong anisotropy of the effective bulk electrical resistivity, especially for partially saturated conditions. Therefore, considering the electrical resistivity as a tensor could improve our understanding of transport properties from field-scale time-lapse ERT.

Conductive, magnetic and structural properties of multilayer films

NASA Astrophysics Data System (ADS)

Kotov, L. N.; Turkov, V. K.; Vlasov, V. S.; Lasek, M. P.; Kalinin, Yu E.; Sitnikov, A. V.

2013-12-01

Composite-semiconductor and composite-dielectric multilayer films were obtained by the ion beam sputtering method in the argon and hydrogen atmospheres with compositions: {[(Co45-Fe45-Zr10)x(Al2O3)y]-[α-Si]}120, {[(Co45-Ta45-Nb10)x(SiO2)y]-[SiO2]}56, {[(Co45-Fe45-Zr10)x(Al2O3)y]-[α-Si:H]}120. The images of surface relief and distribution of the dc current on composite layer surface were obtained with using of atomic force microscopy (AFM). The dependencies of specific electric resistance, ferromagnetic resonance (FMR) fields and width of line on metal (magnetic) phase concentration x and nanolayers thickness of multilayer films were obtained. The characteristics of FMR depend on magnetic interaction among magnetic granules in the composite layers and between the layers. These characteristics depend on the thickness of composite and dielectric or semiconductor nanolayers. The dependences of electric microwave losses on the x and alternating field frequency were investigated.

Optimization of X-ray Absorbers for TES Microcalorimeters

NASA Technical Reports Server (NTRS)

Iyomoto, Naoko; Sadleir, John E.; Figueroa-Feliciano, Enectali; Saab, Tarek; Bandler, Simon; Kilbourne, Caroline; Chervenak, James; Talley, Dorothy; Finkbeiner, Fred; Brekosky, Regis

2004-01-01

We have investigated the thermal, electrical, and structural properties of Bi and BiCu films that are being developed as X-ray absorbers for transition-edge sensor (TES) microcalorimeter arrays for imaging X-ray spectroscopy. Bi could be an ideal material for an X-ray absorber due to its high X-ray stopping power and low heat capacity, but it has a low thermal conductivity, which can result in position dependence of the pulses in the absorber. In order to improve the thermal conductivity, we added Cu layers in between the Bi layers. We measured electrical and thermal conductivities of the films around 0.1 K(sub 1) the operating temperature of the TES calorimeter, to examine the films and to determine the optimal thickness of the Cu layer. From the electrical conductivity measurements, we found that the Cu is more resistive on the Bi than on a Si substrate. Together with an SEM picture of the Bi surface, we concluded that the rough surface of the Bi film makes the Cu layer resistive when the Cu layer is not thick enough t o fill in the roughness. From the thermal conductivity measurements, we determined the thermal diffusion constant to be 2 x l0(exp 3) micrometers squared per microsecond in a film that consists of 2.25 micrometers of Bi and 0.1 micrometers of Cu. We measured the position dependence in the film and found that its thermal diffusion constant is too low to get good energy resolution, because of the resistive Cu layer and/or possibly a very high heat capacity of our Bi films. We show plans to improve the thermal diffusion constant in our BiCu absorbers.

The effect of body bias of the metal-oxide-semiconductor field-effect transistor in the resistive network on spatial current distribution in a bio-inspired complementary metal-oxide-semiconductor vision chip

NASA Astrophysics Data System (ADS)

Kong, Jae-Sung; Hyun, Hyo-Young; Seo, Sang-Ho; Shin, Jang-Kyoo

2008-11-01

Complementary metal-oxide-semiconductor (CMOS) vision chips for edge detection based on a resistive circuit have recently been developed. These chips help in the creation of neuromorphic systems of a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends predominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the metal-oxide-semiconductor field-effect transistor for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160 × 120 CMOS vision chips have been fabricated using a standard CMOS technology. The experimental results nicely match our prediction.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eidem, P.A.; Tangstad, M.; Bakken, J.A.

The electrical resistivity of the coke bed is of great importance when producing FeMn, SiMn, and FeCr in a submerged arc furnace. In these processes, a coke bed is situated below and around the electrode tip and consists of metallurgical coke, slag, gas, and metal droplets. Since the basic mechanisms determining the electrical resistivity of a coke bed is not yet fully understood, this investigation is focused on the resistivity of dry coke beds consisting of different carbonaceous materials, i.e., coke beds containing no slag or metal. A method that reliably compares the electrical bulk resistivity of different metallurgical cokesmore » at 1500{sup o} C to 1600{sup o}C is developed. The apparatus is dimensioned for industrial sized materials, and the electrical resistivity of anthracite, charcoal, petroleum coke, and metallurgical coke has been measured. The resistivity at high temperatures of the Magnitogorsk coke, which has the highest resistivity of the metallurgical cokes investigated, is twice the resistivity of the Corus coke, which has the lowest electrical resistivity. Zdzieszowice and SSAB coke sort in between with decreasing resistivities in the respective order. The electrical resistivity of anthracite, charcoal, and petroleum coke is generally higher than the resistivity of the metallurgical cokes, ranging from about two to about eight times the resistivity of the Corus coke at 1450{sup o}C. The general trend is that the bulk resistivity of carbon materials decreases with increasing temperature and increasing particle size.« less

Anomalous pressure dependence of magnetic ordering temperature in Tb revealed by resistivity measurements to 141 GPa. Comparison with Gd and Dy

DOE PAGES

Lim, J.; Fabbris, G.; Haskel, D.; ...

2015-05-26

In previous studies the pressure dependence of the magnetic ordering temperature T o of Dy was found to exhibit a sharp increase above its volume collapse pressure of 73 GPa, appearing to reach temperatures well above ambient at 157 GPa. In a search for a second such lanthanide, electrical resistivity measurements were carried out on neighboring Tb to 141 GPa over the temperature range 3.8 - 295 K. Below Tb’s volume collapse pressure of 53 GPa, the pressure dependence T o(P) mirrors that of both Dy and Gd. However, at higher pressures T o(P) for Tb becomes highly anomalous. Thismore » result, together with the very strong suppression of superconductivity by dilute Tb ions in Y, suggests that extreme pressure transports Tb into an unconventional magnetic state with an anomalously high magnetic ordering temperature.« less

Changes of electrical conductivity of the metal surface layer by the laser alloying with foreign elements

NASA Astrophysics Data System (ADS)

Kostrubiec, Franciszek; Pawlak, Ryszard; Raczynski, Tomasz; Walczak, Maria

1994-09-01

Laser treatment of the surface of materials is of major importance for many fields technology. One of the latest and most significant methods of this treatment is laser alloying consisting of introducing foreign atoms into the metal surface layer during the reaction of laser radiation with the surface. This opens up vast possibilities for the modification of properties of such a layer (obtaining layers of increased microhardness, increased resistance to electroerosion in an electric arc, etc.). Conductivity of the material is a very important parameter in case of conductive materials used for electrical contacts. The paper presents the results of studies on change in electrical conductivity of the surface layer of metals alloyed with a laser. A comparative analysis of conductivity of base metal surface layers prior to and following laser treatment has been performed. Depending on the base metal and the alloying element, optical treatment parameters allowing a required change in the surface layer conductivity have been selected. A very important property of the contact material is its resistance to plastic strain. It affects the real value of contact surface coming into contact and, along with the material conductivity, determines contact resistance and the amount of heat generated in place of contact. These quantities are directly related to the initiation and the course of an arc discharge, hence they also affect resistance to electroerosion. The parameter that reflects plastic properties with loads concentrated on a small surface, as is the case with a reciprocal contact force of two real surfaces with their irregularities being in contact, is microhardness. In the paper, the results of investigations into microhardness of modified surface layers compared with base metal microhardness have been presented.

Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

NASA Astrophysics Data System (ADS)

Cristea, D.; Crisan, A.; Cretu, N.; Borges, J.; Lopes, C.; Cunha, L.; Ion, V.; Dinescu, M.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Munteanu, D.

2015-11-01

The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOz thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N2 and O2, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, -50 V or -100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance TaxNyOz films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric TaxNyOz films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

Exploration of the Chaotic Behaviour in a Buck-Boost Converter Depending on the Converter and Load Elements

NASA Astrophysics Data System (ADS)

Demirbaş, Şevki; Fidanboy, Hikmet; Kurt, Erol

2016-08-01

In this paper, detailed analyses of the chaotic behavior observed in a buck-boost converter are presented. Although this basic converter system is already known world-wide for the purpose of dc-dc conversion of the output of renewable energy systems, it indicates certain chaotic regimes where both the output amplitude and frequency change randomly. This chaotic regime can yield an unstable output over the resistive or resistive/inductive electrical loads. This study presents a detailed map for the regular and chaotic regions in terms of material parameters, such as converter capacitance C, resistive load R, and inductive load L. Thus, the stable area of operation for efficient and renewable electricity production will be ascertained for the studied converter system. We emphasize that the material parameters C, R, and L play important roles in generating energy from the solar cell; indeed, the stability increases with higher values of the converter capacitor and load inductance, whereas it decreases according to the resistive load. A number of periodic windows have been observed and the output frequency gives a broad-band spectrum of up to 50 kHz.

Ultrahigh Oxidation Resistance and High Electrical Conductivity in Copper-Silver Powder.

PubMed

Li, Jiaxiang; Li, Yunping; Wang, Zhongchang; Bian, Huakang; Hou, Yuhang; Wang, Fenglin; Xu, Guofu; Liu, Bin; Liu, Yong

2016-12-22

The electrical conductivity of pure Cu powder is typically deteriorated at elevated temperatures due to the oxidation by forming non-conducting oxides on surface, while enhancing oxidation resistance via alloying is often accompanied by a drastic decline of electrical conductivity. Obtaining Cu powder with both a high electrical conductivity and a high oxidation resistance represents one of the key challenges in developing next-generation electrical transferring powder. Here, we fabricate a Cu-Ag powder with a continuous Ag network along grain boundaries of Cu particles and demonstrate that this new structure can inhibit the preferential oxidation in grain boundaries at elevated temperatures. As a result, the Cu-Ag powder displays considerably high electrical conductivity and high oxidation resistance up to approximately 300 °C, which are markedly higher than that of pure Cu powder. This study paves a new pathway for developing novel Cu powders with much enhanced electrical conductivity and oxidation resistance in service.

Coupling behaviors of graphene/SiO2/Si structure with external electric field

NASA Astrophysics Data System (ADS)

Onishi, Koichi; Kirimoto, Kenta; Sun, Yong

2017-02-01

A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the traveling-wave. The attenuation originates from Joule heat of the moving carriers, and the delay of the traveling-wave was due to electrical resistances of the fixed charge and the moving carriers with low mobility in the sample. The attenuation of the external electric field was observed in both Si crystal and graphene films in the temperature range. A large attenuation around 190 K, which depends on the strength of external electric field, was confirmed for the Si crystal. But, no significant temperature and field dependences of the attenuation in the graphene films were detected. On the other hand, the delay of the traveling-wave due to ionic scattering at low temperature side was observed in the Si crystal, but cannot be detected in the films of the mono-, bi- and penta-layer graphene with high conductivities. Also, it was indicated in this study that skin depth of the graphene film was less than thickness of two graphene atomic layers in the temperature range.

Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors

NASA Astrophysics Data System (ADS)

Han, Sangmoon; Choi, Ilgyu; Lee, Kwanjae; Lee, Cheul-Ro; Lee, Seoung-Ki; Hwang, Jeongwoo; Chung, Dong Chul; Kim, Jin Soo

2018-02-01

We report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 kΩ and 0.19 Ω cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 kΩ and 0.39 Ω cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain-source voltage characteristic curves under various negative gate-source voltages were successfully observed at room temperature.

Atmospheric electric field and current configurations in the vicinity of mountains

NASA Technical Reports Server (NTRS)

Tzur, I.; Roble, R. G.; Adams, J. C.

1985-01-01

A number of investigations have been conducted regarding the electrical distortion produced by the earth's orography. Hays and Roble (1979) utilized their global model of atmospheric electricity to study the effect of large-scale orographic features on the currents and fields of the global circuit. The present paper is concerned with an extension of the previous work, taking into account an application of model calculations to orographic features with different configurations and an examination of the electric mapping of these features to ionospheric heights. A two-dimensional quasi-static numerical model of atmospheric electricity is employed. The model contains a detailed electrical conductivity profile. The model region extends from the surface to 100 km and includes the equalization layer located above approximately 70 km. The obtained results show that the electric field and current configurations above mountains depend upon the curvature of the mountain slopes, on the width of the mountain, and on the columnar resistance above the mountain (or mountain height).

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

PubMed

Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

2014-04-18

We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

In-situ measurement system

DOEpatents

Lord, David E.

1983-01-01

A multipurpose in situ underground measurement system comprising a plurality of long electrical resistance elements in the form of rigid reinforcing bars, each having an open loop "hairpin" configuration of shorter length than the other resistance elements. The resistance elements are arranged in pairs in a unitized structure, and grouted in place in the underground volume. The electrical resistance of each element and the difference in electrical resistance of the paired elements are obtained, which difference values may be used in analytical methods involving resistance as a function of temperature. A scanner sequentially connects the resistance-measuring apparatus to each individual pair of elements. A source of heating current is also selectively connectable for heating the elements to an initial predetermined temperature prior to electrical resistance measurements when used as an anemometer.

Non-volatile, solid state bistable electrical switch

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor)

1994-01-01

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Use of electrical resistivity to detect underground mine voids in Ohio.

DOT National Transportation Integrated Search

2002-01-01

Electrical resistivity surveys were completed at : two sites along State Route 32 in Jackson and Vinton : Counties, Ohio. The surveys were done to : determine whether the electrical resistivity method : could identify areas where coal was mined, leav...

Intrinsic high electrical conductivity of stoichiometric SrNb O3 epitaxial thin films

NASA Astrophysics Data System (ADS)

Oka, Daichi; Hirose, Yasushi; Nakao, Shoichiro; Fukumura, Tomoteru; Hasegawa, Tetsuya

2015-11-01

SrV O3 and SrNb O3 are perovskite-type transition-metal oxides with the same d1 electronic configuration. Although SrNb O3 (4 d1 ) has a larger d orbital than SrV O3 (3 d1 ), the reported electrical resistivity of SrNb O3 is much higher than that of SrV O3 , probably owing to nonstoichiometry. In this paper, we grew epitaxial, high-conductivity stoichiometric SrNb O3 using pulsed laser deposition. The growth temperature strongly affected the Sr/Nb ratio and the oxygen content of the films, and we obtained stoichiometric SrNb O3 at a very narrow temperature window around 630 °C. The stoichiometric SrNb O3 epitaxial thin films grew coherently on KTa O3 (001) substrates with high crystallinity. The room-temperature resistivity of the stoichiometric film was 2.82 ×10-5Ω cm , one order of magnitude lower than the lowest reported value of SrNb O3 and comparable with that of SrV O3 . We observed a T -square dependence of resistivity below T*=180 K and non-Drude behavior in near-infrared absorption spectroscopy, attributable to the Fermi-liquid nature caused by electron correlation. Analysis of the T -square coefficient A of resistivity experimentally revealed that the 4 d orbital of Nb that is larger than the 3 d ones certainly contributes to the high electrical conduction of SrNb O3 .

Moisture interaction and stability of ZOT (Zinc Orthotitanate) thermal control spacecraft coating

NASA Technical Reports Server (NTRS)

Mon, Gordon R.; Gonzalez, Charles C.; Ross, Ronald G., Jr.; Wen, Liang C.; Odonnell, Timothy

1988-01-01

Two of the many performance requirements of the zinc orthotitanate (ZOT) ceramic thermal control paint covering parts of the Jupiter-bound Galileo spacecraft are that it be sufficiently electrically conductive so as to prevent electrostatic discharge (ESD) damage to onboard electronics and that it adhere to and protect the substrate from corrosion in terrestrial environments. The bulk electrical resistivity of ZOT on an aluminum substrate was measured over the ranges 22 C to 90 C and 0 percent RH to 100 percent RH, and also in soft (10 (minus 2) Torr) and hard (10 (minus 7) Torr) vacuums. No significant temperature dependence was evident, but measured resistivity values ranged over 9 orders of magnitude: 10 to the 5th power ohm-cm at 100 percent RH greater than 10 to the 12th power ohm-cm in a hard vacuum. The latter value violates the ESD criterion for a typical 0.019 cm thick coating. The corrosion study involved exposing typical ZOT substrate combinations to two moisture environments - 30 C/85 percent RH and 85 C/85 percent RH - for 2000 hours, during which time the samples were periodically removed for front-to-back electrical resistance and scratch/peel test measurements. It was determined that the ZOT/Al and ZOT/Mg systems are stable (no ZOT delamination), although some corrosion (oxide formation) and resistivity increases observed among the ZOT/Mg samples warrant that exposure of some parts to humid environments be minimized.

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jun Sung; Seo, Sung Seok A; Chisholm, Matthew F

2010-01-01

We report magnetotransport properties of heterointerfaces between the Mott insulator LaTiO{sub 3} and the band insulator SrTiO{sub 3} in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO{sub 3} at low temperatures and its electric fieldmore » dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.« less

Thermal and electrical contact conductance studies

NASA Technical Reports Server (NTRS)

Vansciver, S. W.; Nilles, M.

1985-01-01

Prediction of electrical and thermal contact resistance for pressed, nominally flat contacts is complicated by the large number of variables which influence contact formation. This is reflected in experimental results as a wide variation in contact resistances, spanning up to six orders of magnitude. A series of experiments were performed to observe the effects of oxidation and surface roughness on contact resistance. Electrical contact resistance and thermal contact conductance from 4 to 290 K on OFHC Cu contacts are reported. Electrical contact resistance was measured with a 4-wire DC technique. Thermal contact conductance was determined by steady-state longitudinal heat flow. Corrections for the bulk contribution ot the overall measured resistance were made, with the remaining resistance due solely to the presence of the contact.

Study of electrical resistivity on the location and identification of contamination

NASA Astrophysics Data System (ADS)

McCarty, B. D.

1985-12-01

Electrical resistance studies were conducted in two laboratory models to determine electrical resistivity relationships and to use those defined relationships to identify contamination spikes. A good correlation was established between resistance data and the composition of leachate and copper spiked leachate gelatin blocks under study. The major variable that could not be eliminated from this study which had the greatest effect on data was moisture content. This thesis contains a review of the theory and field application of electrical resistivity, a description of the experimental approach used, and a summary of the data collected.

Effect of rare-earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride hafnium pentatelluride

NASA Astrophysics Data System (ADS)

Lowhorn, Nathan Dane

The transition metal pentatellurides HfTe5 and ZrTe5 have been observed to possess interesting electrical transport properties. High thermopower and low resistivity values result in high thermoelectric power factors. In addition, they possess anomalous transport behavior. The temperature dependence of the resistivity is semimetallic except for a large resistive peak as a function of temperature at around 75 K for HfTe5 and 145 K for ZrTe5. At a temperature corresponding to this peak, the thermopower crosses zero as it moves from large positive values to large negative values. This behavior has been found to be extremely sensitive to changes in the energetics of the system through influences such as magnetic field, stress, pressure, microwave radiation, and substitutional doping. This behavior has yet to be fully explained. Previous doping studies have shown profound and varied effects on the anomalous transport behavior. In this study we investigate the effect on the electrical resistivity, thermopower, and magnetoresistance of doping HfTe5 with rare-earth elements. We have grown single crystals of nominal Hf0.75RE 0.25Te5 where RE = Ce, Pr, Nd, Sm, Gd, Tb, Dy, and Ho. Electrical resistivity and thermopower data from about 10 K to room temperature are presented and discussed in terms of the thermoelectric properties. Doping with rare-earth elements of increasing atomic number leads to a systematic suppression of the anomalous transport behavior. Rare-earth doping also leads to an enhancement of the thermoelectric power factor over that of previously studied pentatellurides and the commonly used thermoelectric material Bi2Te3. For nominal Hf0.75Nd0.25Te5 and Hf0.75 Sm0.25Te5, values more than a factor of 2 larger than that Bi2Te3 are observed. In addition, suppression of the anomalous transport behavior leads to a suppression of the large magnetoresistive effect observed in the parent compounds. Rare-earth doping of HfTe5 has a profound impact on the anomalous electrical transport properties of the parent pentatellurides and produces enhanced thermoelectric properties.

Structural and electronic transport properties of compound forming HgPb liquid alloy using ab-initio pseudopotential

NASA Astrophysics Data System (ADS)

Sharma, Nalini; Thakur, Anil; Ahluwalia, P. K.

2013-02-01

The electrical resistivity of compound forming liquid alloy HgPb is studied as a function of concentration. Hard sphere diameters of Hg and Pb are obtained through the inter-ionic pair potential evaluated using Troullier and Martins ab initio pseudopotential, which have been used to calculate partial structure factors. Considering the liquid alloy to be a ternary mixture Ziman's formula for calculating the resistivity of binary liquid alloys, modified for complex formation, has been used. The concentration dependence in resistivity occurs due to preferential ordering of unlike atoms as nearest neighbours with help of complex formation model. Though the compound HgiPbi as per structure peaks is found to be less stable. However it contributes significantly to resistivity as compared to bare ions.

Determination of the electrical resistivity of vertically aligned carbon nanotubes by scanning probe microscopy

NASA Astrophysics Data System (ADS)

Ageev, O. A.; Il'in, O. I.; Rubashkina, M. V.; Smirnov, V. A.; Fedotov, A. A.; Tsukanova, O. G.

2015-07-01

Techniques are developed to determine the resistance per unit length and the electrical resistivity of vertically aligned carbon nanotubes (VA CNTs) using atomic force microscopy (AFM) and scanning tunneling microscopy (STM). These techniques are used to study the resistance of VA CNTs. The resistance of an individual VA CNT calculated with the AFM-based technique is shown to be higher than the resistance of VA CNTs determined by the STM-based technique by a factor of 200, which is related to the influence of the resistance of the contact of an AFM probe to VA CNTs. The resistance per unit length and the electrical resistivity of an individual VA CNT 118 ± 39 nm in diameter and 2.23 ± 0.37 μm in height that are determined by the STM-based technique are 19.28 ± 3.08 kΩ/μm and 8.32 ± 3.18 × 10-4 Ω m, respectively. The STM-based technique developed to determine the resistance per unit length and the electrical resistivity of VA CNTs can be used to diagnose the electrical parameters of VA CNTs and to create VA CNT-based nanoelectronic elements.

Use of electrical resistivity to detect underground mine voids in Ohio : executive summary.

DOT National Transportation Integrated Search

2002-01-01

Electrical resistivity surveys were completed at two sites along State Route 32 in Jackson and Vinton Counties, Ohio. : The surveys were done to determine whether the electrical resistivity method could identify areas where coal was : mined, leaving ...

Iron aluminide useful as electrical resistance heating elements

DOEpatents

Sikka, V.K.; Deevi, S.C.; Fleischhauer, G.S.; Hajaligol, M.R.; Lilly, A.C. Jr.

1997-04-15

The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, {<=}1% Cr and either {>=}0.05% Zr or ZrO{sub 2} stringers extending perpendicular to an exposed surface of the heating element or {>=}0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, {<=}2% Ti, {<=}2% Mo, {<=}1% Zr, {<=}1% C, {<=}0.1% B, {<=}30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, {<=}1% rare earth metal, {<=}1% oxygen, {<=}3% Cu, balance Fe. 64 figs.

Electrical resistivity characteristics of diesel oil-contaminated kaolin clay and a resistivity-based detection method.

PubMed

Liu, Zhibin; Liu, Songyu; Cai, Yi; Fang, Wei

2015-06-01

As the dielectric constant and conductivity of petroleum products are different from those of the pore water in soil, the electrical resistivity characteristics of oil-contaminated soil will be changed by the corresponding oil type and content. The contaminated soil specimens were manually prepared by static compaction method in the laboratory with commercial kaolin clay and diesel oil. The water content and dry density of the first group of soil specimens were controlled at 10 % and 1.58 g/cm(3). Corresponding electrical resistivities of the contaminated specimens were measured at the curing periods of 7, 14, and 28 and 90, 120, and 210 days on a modified oedometer cell with an LCR meter. Then, the electrical resistivity characteristics of diesel oil-contaminated kaolin clay were discussed. In order to realize a resistivity-based oil detection method, the other group of oil-contaminated kaolin clay specimens was also made and tested, but the initial water content, oil content, and dry density were controlled at 0~18 %, 0~18 %, 1.30~1.95 g/cm(3), respectively. Based on the test data, a resistivity-based artificial neural network (ANN) was developed. It was found that the electrical resistivity of kaolin clay decreased with the increase of oil content. Moreover, there was a good nonlinear relationship between electrical resistivity and corresponding oil content when the water content and dry density were kept constant. The decreasing velocity of the electrical resistivity of oil-contaminated kaolin clay was higher before the oil content of 12 % than after 12 %, which indicated a transition of the soil from pore water-controlled into oil-controlled electrical resistivity characteristics. Through microstructural analysis, the decrease of electrical resistivity could be explained by the increase of saturation degree together with the collapse of the electrical double layer. Environmental scanning electron microscopy (ESEM) photos indicated that the diesel oil in kaolin clay normally had three kinds of effects including oil filling, coating, and bridging. Finally, a resistivity-based ANN model was established based on the database collected from the experiment data. The performance of the model was proved to be reasonably accepted, which puts forward a possible simple, economic, and effective tool to detect the oil content in contaminated clayey soils just with four basic parameters: wet density, dry density, measured moisture content, and electrical resistivity.

Effect of 100 MeV Si7+ ions' irradiation on Pd/n-GaAs Schottky diodes

NASA Astrophysics Data System (ADS)

Sinha, O. P.

2017-12-01

Pd/n-GaAs realized devices (junction made on a virgin substrate prior to irradiation) and Pd/n-GaAs fabricated devices (junction realized after the virgin substrate irradiation) have been irradiated with 100 MeV Si7+ ions for the varying fluence of 1012-1013 ions/cm2. The devices have been characterized by I-V and C-V techniques for an electrical response. The electrical characterization of these devices shows the presence of interfacial layer. Moreover, the C-V characteristics show strong frequency dependence behavior, which indicates the involvement of interfacial charge layer with deep electron states. The hydrogenation of these devices has not caused any significant change in the electrical (I-V and C-V) characteristics. The observed results have been discussed in the realm of radiation-induced defects, which cause the carrier removal and compensation phenomena to cause the observed high resistivity and filling and unfilling of these traps' level to cause strong frequency dependence behavior.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Meikap, Ajit Kumar

2017-12-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Meikap, Ajit Kumar

2018-06-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Superconductivity in diamond.

PubMed

Ekimov, E A; Sidorov, V A; Bauer, E D; Mel'nik, N N; Curro, N J; Thompson, J D; Stishov, S M

2004-04-01

Diamond is an electrical insulator well known for its exceptional hardness. It also conducts heat even more effectively than copper, and can withstand very high electric fields. With these physical properties, diamond is attractive for electronic applications, particularly when charge carriers are introduced (by chemical doping) into the system. Boron has one less electron than carbon and, because of its small atomic radius, boron is relatively easily incorporated into diamond; as boron acts as a charge acceptor, the resulting diamond is effectively hole-doped. Here we report the discovery of superconductivity in boron-doped diamond synthesized at high pressure (nearly 100,000 atmospheres) and temperature (2,500-2,800 K). Electrical resistivity, magnetic susceptibility, specific heat and field-dependent resistance measurements show that boron-doped diamond is a bulk, type-II superconductor below the superconducting transition temperature T(c) approximately 4 K; superconductivity survives in a magnetic field up to Hc2(0) > or = 3.5 T. The discovery of superconductivity in diamond-structured carbon suggests that Si and Ge, which also form in the diamond structure, may similarly exhibit superconductivity under the appropriate conditions.

Vanadium doped Sb{sub 2}Te{sub 3} material with modified crystallization mechanism for phase-change memory application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Xinglong; Zheng, Yonghui; Zhou, Wangyang

2015-06-15

In this paper, V{sub 0.21}Sb{sub 2}Te{sub 3} (VST) has been proposed for phase-change memory applications. With vanadium incorporating, VST has better thermal stability than Sb{sub 2}Te{sub 3} and can maintain in amorphous phase at room temperature. Two resistance steps were observed in temperature dependent resistance measurements. By real-time observing the temperature dependent lattice structure evolution, VST presents as a homogenous phase throughout the whole thermal process. Combining Hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of VST material. Then, the amorphous thermal stability enhancement can also be rooted inmore » the suppression of the fast growth crystallization mechanism. Furthermore, the applicability of VST is demonstrated by resistance-voltage measurement, and the phase transition of VST can be triggered by a 15 ns electric pulse. In addition, endurance up to 2.7×10{sup 4} cycles makes VST a promising candidate for phase-change memory applications.« less

Origin of negative resistance in anion migration controlled resistive memory

NASA Astrophysics Data System (ADS)

Banerjee, Writam; Wu, Facai; Hu, Yuan; Wu, Quantan; Wu, Zuheng; Liu, Qi; Liu, Ming

2018-03-01

Resistive random access memory (RRAM) is one of the most promising emerging nonvolatile technologies for the futuristic memory devices. Resistive switching behavior often shows negative resistance (NR), either voltage controlled or current controlled. In this work, the origin of a current compliance dependent voltage controlled NR effect during the resetting of anion migration based RRAM devices is discussed. The N-type voltage controlled NR is a high field driven phenomena. The current conduction within the range of a certain negative voltage is mostly dominated by space charge limited current. But with the higher negative voltage, a field induced tunneling effect is generated in the NR region. The voltage controlled NR is strongly dependent on the compliance current. The area independent behavior indicates the filamentary switching. The peak to valley ratio (PVR) is > 5. The variation of PVR as a function of the conduction band offset is achieved. Compared to other reported works, based on the PVR, it is possible to distinguish the RRAM types. Generally, due to the higher electric field effect on the metallic bridge during RESET, the electrochemical metallization type RRAM shows much higher PVR than the valance change type RRAM.

In situ measurement system

DOEpatents

Lord, D.E.

1980-11-24

A multipurpose in situ underground measurement system comprising a plurality of long electrical resistance elements in the form of rigid reinforcing bars, each having an open loop hairpin configuration of shorter length than the other resistance elements. The resistance elements are arranged in pairs in a unitized structure, and grouted in place in the underground volume. Measurement means are provided for obtaining for each pair the electrical resistance of each element and the difference in electrical resistance of the paired elements, which difference values may be used in analytical methods involving resistance as a function of temperature. A scanner means sequentially connects the resistance-measuring apparatus to each individual pair of elements. A source of heating current is also selectively connectable for heating the elements to an initial predetermined temperature prior to electrical resistance measurements when used as an anemometer.

Effect of pressure and magnetic field on the electrical resistivity of TbB6

NASA Astrophysics Data System (ADS)

Sakai, Takeshi; Oomi, Gendo; Kunii, Satoru

2009-06-01

Electrical resistivity of a single crystal of TbB6 was studied under hydrostatic pressures up to 2.1 GPa and magnetic fields up to 9 T. The Néel temperature, rN, decreases linearly with increasing pressure: \\ddiff lnTN/\\ddiff P = 3.14×10-2 GPa-1 at zero external field. This pressure dependence of TN weakens as external fields increase. At ambient pressure, the magnetoresistance at 4.2 K is positive up to 4.8 T and becomes negative above 4.8 T. The positive magnetoresistance observed at ambient pressure is suppressed by applying pressure, which enhances the negative magnetoresistance. These results are interpreted in terms of the reduction of the scattering of conduction electrons, due to disordered magnetic moment being suppressed by derealization of 4f electrons at high pressure, and the magnetic field variation of the large transition probability between the ground state and the excited levels.

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

2013-05-01

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

Pressure-induced Lifshitz transition in NbP: Raman, x-ray diffraction, electrical transport, and density functional theory

NASA Astrophysics Data System (ADS)

Gupta, Satyendra Nath; Singh, Anjali; Pal, Koushik; Muthu, D. V. S.; Shekhar, C.; Qi, Yanpeng; Naumov, Pavel G.; Medvedev, Sergey A.; Felser, C.; Waghmare, U. V.; Sood, A. K.

2018-02-01

We report high-pressure Raman, synchrotron x-ray diffraction, and electrical transport studies on Weyl semimetals NbP and TaP along with first-principles density functional theoretical (DFT) analysis. The frequencies of first-order Raman modes of NbP harden with increasing pressure and exhibit a slope change at Pc˜9 GPa. The pressure-dependent resistivity exhibits a minimum at Pc. The temperature coefficient of resistivity below Pc is positive as expected for semimetals but changes significantly in the high-pressure phase. Using DFT calculations, we show that these anomalies are associated with a pressure-induced Lifshitz transition, which involves the appearance of electron and hole pockets in its electronic structure. In contrast, the results of Raman and synchrotron x-ray diffraction experiments on TaP and DFT calculations show that TaP is quite robust under pressure and does not undergo any phase transition.

Experimental investigation into the coupling effects of magnetic field, temperature and pressure on electrical resistivity of non-oriented silicon steel sheet

NASA Astrophysics Data System (ADS)

Xiao, Lijun; Yu, Guodong; Zou, Jibin; Xu, Yongxiang

2018-05-01

In order to analyze the performance of magnetic device which operate at high temperature and high pressure, such as submersible motor, oil well transformer, the electrical resistivity of non-oriented silicon steel sheets is necessary for precise analysis. But the reports of the examination of the measuring method suitable for high temperature up to 180 °C and high pressure up to 140 MPa are few. In this paper, a measurement system based on four-probe method and Archimedes spiral shape measurement specimens is proposed. The measurement system is suitable for measuring the electrical resistivity of unconventional specimens under high temperature and high pressure and can simultaneously consider the influence of the magnetic field on the electrical resistivity. It can be seen that the electrical resistivity of the non-oriented silicon steel sheets will fluctuate instantaneously when the magnetic field perpendicular to the conductive path of the specimens is loaded or removed. The amplitude and direction of the fluctuation are not constant. Without considering the effects of fluctuations, the electrical resistivity of the non-oriented silicon steel sheets is the same when the magnetic field is loaded or removed. And the influence of temperature on the electrical resistivity of the non-oriented silicon steel sheet is still the greatest even though the temperature and the pressure are coupled together. The measurement results also show that the electrical resistivity varies linearly with temperature, so the temperature coefficient of resistivity is given in the paper.

Giant Permittivity in Epitaxial Ferroelectric Heterostructures

NASA Astrophysics Data System (ADS)

Erbil, A.; Kim, Y.; Gerhardt, R. A.

1996-08-01

A giant permittivity associated with the motion of domain walls is reported in epitaxial hetero- structures having alternating layers of ferroelectric and nonferroelectric oxides. At low frequencies, permittivities as high as 420 000 are found. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field correlated with the dc bias-field dependence of ac permittivities. We interpret the observations as a result of the motion of a pinned domain wall lattice at low electric fields and sliding-mode motion at high electric fields.

An origin of good electrical conduction in La{sub 4}BaCu{sub 5}O{sub 13+δ}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mori, Daiki; Asai, Shinichiro; Terasaki, Ichiro, E-mail: terra@cc.nagoya-u.ac.jp

2015-07-21

We have prepared a set of polycrystalline samples of the metallic copper oxide La{sub 4}BaCu{sub 5−x}Co{sub x}O{sub 13+δ} (0 ≤ x ≤ 0.35) and have measured the resistivity from 4 to 800 K. All the resistivities show metallic temperature dependence with a small magnitude less than 2 mΩ cm at 800 K, indicating that the metallic conduction is robust against impurities. The robust metallic conduction further suggests that this class of oxide is a promising candidate for electrical leads at high temperature, which might replace platinum. A detailed measurement and analysis on the Hall resistivity have revealed that at least two components are responsible for the electricalmore » conduction, in which a large number of electrons of moderate mobility coexist with a much smaller number of holes of extremely high mobility. This large electron density well screens the impurity potential and retains the metallic conduction against 7% impurity doping.« less

Swift heavy ion-induced radiation damage in isotropic graphite studied by micro-indentation and in-situ electrical resistivity

NASA Astrophysics Data System (ADS)

Hubert, Christian; Voss, Kay Obbe; Bender, Markus; Kupka, Katharina; Romanenko, Anton; Severin, Daniel; Trautmann, Christina; Tomut, Marilena

2015-12-01

Due to its excellent thermo-physical properties and radiation hardness, isotropic graphite is presently the most promising material candidate for new high-power ion accelerators which will provide highest beam intensities and energies. Under these extreme conditions, specific accelerator components including production targets and beam protection modules are facing the risk of degradation due to radiation damage. Ion-beam induced damage effects were tested by irradiating polycrystalline, isotropic graphite samples at the UNILAC (GSI, Darmstadt) with 4.8 MeV per nucleon 132Xe, 150Sm, 197Au, and 238U ions applying fluences between 1 × 1011 and 1 × 1014 ions/cm2. The overall damage accumulation and its dependence on energy loss of the ions were studied by in situ 4-point resistivity measurements. With increasing fluence, the electric resistivity increases due to disordering of the graphitic structure. Irradiated samples were also analyzed off-line by means of micro-indentation in order to characterize mesoscale effects such as beam-induced hardening and stress fields within the specimen. With increasing fluence and energy loss, hardening becomes more pronounced.

Using electrical impedance tomography to map subsurface hydraulic conductivity

DOEpatents

Berryman, James G.; Daily, William D.; Ramirez, Abelardo L.; Roberts, Jeffery J.

2000-01-01

The use of Electrical Impedance Tomography (EIT) to map subsurface hydraulic conductivity. EIT can be used to map hydraulic conductivity in the subsurface where measurements of both amplitude and phase are made. Hydraulic conductivity depends on at least two parameters: porosity and a length scale parameter. Electrical Resistance Tomography (ERT) measures and maps electrical conductivity (which can be related to porosity) in three dimensions. By introducing phase measurements along with amplitude, the desired additional measurement of a pertinent length scale can be achieved. Hydraulic conductivity controls the ability to flush unwanted fluid contaminants from the surface. Thus inexpensive maps of hydraulic conductivity would improve planning strategies for subsequent remediation efforts. Fluid permeability is also of importance for oil field exploitation and thus detailed knowledge of fluid permeability distribution in three-dimension (3-D) would be a great boon to petroleum reservoir analysts.

Transport in ultrathin gold films decorated with magnetic Gd atoms

NASA Astrophysics Data System (ADS)

Alemani, Micol; Helgren, Erik; Hugel, Addison; Hellman, Frances

2008-03-01

We have performed four-probe transport measurements of ultrathin Au films decorated with Gd ad-atoms. The samples were prepared by quench condensation, i.e., sequential evaporation on a cryogenically cooled substrate under UHV conditions while monitoring the film thickness and resistance. Electrically continuous Au films at thickness of about 2 mono-layers of material are grown on an amorphous Ge wetting layer. The quench condensation method provides a sensitive control on the sample growth process, allowing us to tune the morphological and electrical configuration of the system. The ultrathin gold films develop from an insulating to a metallic state as a function of film thickness. The temperature dependence of the Au conductivity for different thickness is studied. It evolves from hopping transport for the insulating films, to a ln T dependence for thicker films. For gold films in the insulating regime we found a decreasing resistance by adding Gd. This is in agreement with a decreasing tunneling barrier height between metallic atoms. The Gd magnetic moments are randomly oriented for isolated atoms. This magnetic disorder leads to scattering of the charge carriers and a reduced conductivity compared to nonmagnetic materials.

Magnetotransport parameters of La0.67Ca0.33MnO3 films grown on neodymium gallate substrates

NASA Astrophysics Data System (ADS)

Boikov, Yu. A.; Volkov, M. P.

2013-01-01

Weakly mechanically stressed 40-nm-thick La0.67Ca0.33MnO3 films have been grown coherently on a (001)NdGaO3 substrate by laser evaporation. The electrical resistivity ρ of the La0.67Ca0.33MnO3 film reaches a maximum at a temperature T C ≈ 255 K. At temperatures below 0.6 T C, the temperature dependences of ρ are well approximated by the relation ρ = ρdef + C 1 T 2 + C 2 T 4.5, in which the first term on the right-hand side accounts for the contribution of structural defects to electrical resistivity, and the second and third terms stand for those of the electron-electron and electron-magnon interactions, respectively. The parameters ρdef ≈ 1 x 10-4 Ω cm and C 1 ≈ 7.7 × 10-9 Ω cm K-2 do not depend on temperature and magnetic field H. The coefficient C 2 decreases with increasing H to reach about 4.9 × 10-15 Ω cm K-4.5 at μ0 H = 14 T.

Corrosion resistant PEM fuel cell

DOEpatents

Fronk, Matthew Howard; Borup, Rodney Lynn; Hulett, Jay S.; Brady, Brian K.; Cunningham, Kevin M.

2011-06-07

A PEM fuel cell having electrical contact elements comprising a corrosion-susceptible substrate metal coated with an electrically conductive, corrosion-resistant polymer containing a plurality of electrically conductive, corrosion-resistant filler particles. The substrate may have an oxidizable metal first layer (e.g., stainless steel) underlying the polymer coating.

Corrosion resistant PEM fuel cell

DOEpatents

Fronk, Matthew Howard; Borup, Rodney Lynn; Hulett, Jay S.; Brady, Brian K.; Cunningham, Kevin M.

2002-01-01

A PEM fuel cell having electrical contact elements comprising a corrosion-susceptible substrate metal coated with an electrically conductive, corrosion-resistant polymer containing a plurality of electrically conductive, corrosion-resistant filler particles. The substrate may have an oxidizable metal first layer (e.g., stainless steel) underlying the polymer coating.

Ultrahigh Oxidation Resistance and High Electrical Conductivity in Copper-Silver Powder

PubMed Central

Li, Jiaxiang; Li, Yunping; Wang, Zhongchang; Bian, Huakang; Hou, Yuhang; Wang, Fenglin; Xu, Guofu; Liu, Bin; Liu, Yong

2016-01-01

The electrical conductivity of pure Cu powder is typically deteriorated at elevated temperatures due to the oxidation by forming non-conducting oxides on surface, while enhancing oxidation resistance via alloying is often accompanied by a drastic decline of electrical conductivity. Obtaining Cu powder with both a high electrical conductivity and a high oxidation resistance represents one of the key challenges in developing next-generation electrical transferring powder. Here, we fabricate a Cu-Ag powder with a continuous Ag network along grain boundaries of Cu particles and demonstrate that this new structure can inhibit the preferential oxidation in grain boundaries at elevated temperatures. As a result, the Cu-Ag powder displays considerably high electrical conductivity and high oxidation resistance up to approximately 300 °C, which are markedly higher than that of pure Cu powder. This study paves a new pathway for developing novel Cu powders with much enhanced electrical conductivity and oxidation resistance in service. PMID:28004839

Underlying Physics of Conductive Polymer Composites and Force Sensing Resistors (FSRs) under Static Loading Conditions

PubMed Central

2017-01-01

Conductive polymer composites are manufactured by randomly dispersing conductive particles along an insulating polymer matrix. Several authors have attempted to model the piezoresistive response of conductive polymer composites. However, all the proposed models rely upon experimental measurements of the electrical resistance at rest state. Similarly, the models available in literature assume a voltage-independent resistance and a stress-independent area for tunneling conduction. With the aim of developing and validating a more comprehensive model, a test bench capable of exerting controlled forces has been developed. Commercially available sensors—which are manufactured from conductive polymer composites—have been tested at different voltages and stresses, and a model has been derived on the basis of equations for the quantum tunneling conduction through thin insulating film layers. The resistance contribution from the contact resistance has been included in the model together with the resistance contribution from the conductive particles. The proposed model embraces a voltage-dependent behavior for the composite resistance, and a stress-dependent behavior for the tunneling conduction area. The proposed model is capable of predicting sensor current based upon information from the sourcing voltage and the applied stress. This study uses a physical (non-phenomenological) approach for all the phenomena discussed here. PMID:28906467

Quantification of blood volume by electrical impedance tomography using a tissue-equivalent phantom.

PubMed

Sadleir, R; Fox, R

1998-11-01

An in vivo electrical impedance tomography (EIT) system was designed to accurately estimate quantities of intra-peritoneal blood in the abdominal cavity. For this it is essential that the response is relatively independent of the position of the high conductivity anomaly (blood) in the body. The sensitivity of the system to the introduction of blood-equivalent resistivity anomalies was assessed by using a cylindrical tissue-equivalent phantom. It was found that a satisfactorily uniform response of the system in both radial (transverse) and axial (longitudinal) directions in the phantom could be achieved by filtering resistivity profile images obtained by EIT measurement, and by using extended electrodes to collect data. Post-processing of single impedance images gave rise to a quantity denoted the resistivity index. A filter was then used to remove the remaining radial variation of the resistivity index. It was calculated by evaluating the resistivity index of a number of theoretically calculated images, and constructing a correction filter similar to those used to remove lens imperfections, such as coma, in optical components. The 30% increase in the resistivity index observed when an anomaly was moved to the maximum extent allowed by the filter calculation (0.75 of the phantom radius) was reduced by the filter to 6%. A study of the axial dependence observed in the resistivity index using electrodes extended in the axial direction by +/-5 cm found that the variation in resistivity index with axial position was about half of that observed using small circular electrodes similar to those used in the Sheffield mark I system.

Designing and Implementation a Lab Testing Method for Power Cables Insulation Resistance According with STAS 10411-89, SR EN ISO/CEI/17025/2005

NASA Astrophysics Data System (ADS)

Dobra, R.; Pasculescu, D.; Marc, G.; Risteiu, M.; Antonov, A.

2017-06-01

Insulation resistance measurement is one of the most important tests required by standards and regulations in terms of electrical safety. Why these tests are is to prevent possible accidents caused by electric shock, damage to equipment or outbreak of fire in normal operating conditions of electrical cables. The insulation resistance experiment refers to the testing of electrical cable insulation, which has a measured resistance that must be below the imposed regulations. Using a microcontroller system data regarding the insulation resistance of the power cables is acquired and with SCADA software the test results are displayed.

Iron aluminide useful as electrical resistance heating elements

DOEpatents

Sikka, Vinod K.; Deevi, Seetharama C.; Fleischhauer, Grier S.; Hajaligol, Mohammad R.; Lilly, Jr., A. Clifton

1997-01-01

The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, .ltoreq.1% Cr and either .gtoreq.0.05% Zr or ZrO.sub.2 stringers extending perpendicular to an exposed surface of the heating element or .gtoreq.0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Zr, .ltoreq.1% C, .ltoreq.0.1% B, .ltoreq.30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, .ltoreq.1% oxygen, .ltoreq.3% Cu, balance Fe.

Iron aluminide useful as electrical resistance heating elements

DOEpatents

Sikka, Vinod K.; Deevi, Seetharama C.; Fleischhauer, Grier S.; Hajaligol, Mohammad R.; Lilly, Jr., A. Clifton

1999-01-01

The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, .ltoreq.1% Cr and either .gtoreq.0.05% Zr or ZrO.sub.2 stringers extending perpendicular to an exposed surface of the heating element or .gtoreq.0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Zr, .ltoreq.1% C, .ltoreq.0.1% B, .ltoreq.30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, .ltoreq.1% oxygen, .ltoreq.3% Cu, balance Fe.

Iron aluminide useful as electrical resistance heating elements

DOEpatents

Sikka, Vinod K.; Deevi, Seetharama C.; Fleischhauer, Grier S.; Hajaligol, Mohammad R.; Lilly, Jr., A. Clifton

2001-01-01

The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, .ltoreq.1% Cr and either .gtoreq.0.05% Zr or ZrO.sub.2 stringers extending perpendicular to an exposed surface of the heating element or .gtoreq.0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Zr, .ltoreq.1% C, .ltoreq.0.1% B, .ltoreq.30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, .ltoreq.1% oxygen, .ltoreq.3% Cu, balance Fe.

Restrictive loads powered by separate or by common electrical sources

NASA Technical Reports Server (NTRS)

Appelbaum, J.

1989-01-01

In designing a multiple load electrical system, the designer may wish to compare the performance of two setups: a common electrical source powering all loads, or separate electrical sources powering individual loads. Three types of electrical sources: an ideal voltage source, an ideal current source, and solar cell source powering resistive loads were analyzed for their performances in separate and common source systems. A mathematical proof is given, for each case, indicating the merit of the separate or common source system. The main conclusions are: (1) identical resistive loads powered by ideal voltage sources perform the same in both system setups, (2) nonidentical resistive loads powered by ideal voltage sources perform the same in both system setups, (3) nonidentical resistive loads powered by ideal current sources have higher performance in separate source systems, and (4) nonidentical resistive loads powered by solar cells have higher performance in a common source system for a wide range of load resistances.

Electrical Impedance Spectroscopy Study of Biological Tissues

PubMed Central

Dean, D.A.; Ramanathan, T.; Machado, D.; Sundararajan, R.

2008-01-01

The objective of this study was to investigate the electrical impedance properties of rat lung and other tissues ex vivo using Electrical Impedance Spectroscopy. Rat lungs (both electroporated and naïve (untreated)), and mesenteric vessels (naïve) were harvested from male Sprague-Dawley rats; their electrical impedance were measured using a Solartron 1290 impedance analyzer. Mouse lung and heart samples (naïve) were also studied. The resistance (Real Z, ohm) and the reactance (Im Z, negative ohm)) magnitudes and hence the Cole-Cole (Real Z versus Im Z) plots are different for the electroporated lung and the naive lung. The results confirm the close relationship between the structure and the functional characteristic. These also vary for the different biological tissues studied. The impedance values were higher at low frequencies compared to those at high frequencies. This study is of practical interest for biological applications of electrical pulses, such as electroporation, whose efficacy depends on cell type and its electrical impedance characteristics. PMID:19255614

2D Heterostructure coatings of hBN-MoS2 layers for corrosion resistance

NASA Astrophysics Data System (ADS)

Vandana, Sajith; Kochat, Vidya; Lee, Jonghoon; Varshney, Vikas; Yazdi, Sadegh; Shen, Jianfeng; Kosolwattana, Suppanat; Vinod, Soumya; Vajtai, Robert; Roy, Ajit K.; Sekhar Tiwary, Chandra; Ajayan, P. M.

2017-02-01

Heterostructures of atomically thin 2D materials could have improved physical, mechanical and chemical properties as compared to its individual components. Here we report, the effect of heterostructure coatings of hBN and MoS2 on the corrosion behavior as compared to coatings employing the individual 2D layer compositions. The poor corrosion resistance of MoS2 (widely used as wear resistant coating) can be improved by incorporating hBN sheets. Depending on the atomic stacking of the 2D sheets, we can further engineer the corrosion resistance properties of these coatings. A detailed spectroscopy and microscopy analysis has been used to characterize the different combinations of layered coatings. Detailed DFT based calculation reveals that the effect on the electrical properties due to atomic stacking is one of the major reasons for the improvement seen in corrosion resistance.

Memristive and neuromorphic behavior in a LixCoO2 nanobattery

NASA Astrophysics Data System (ADS)

Mai, V. H.; Moradpour, A.; Senzier, P. Auban; Pasquier, C.; Wang, K.; Rozenberg, M. J.; Giapintzakis, J.; Mihailescu, C. N.; Orfanidou, C. M.; Svoukis, E.; Breza, A.; Lioutas, Ch B.; Franger, S.; Revcolevschi, A.; Maroutian, T.; Lecoeur, P.; Aubert, P.; Agnus, G.; Salot, R.; Albouy, P. A.; Weil, R.; Alamarguy, D.; March, K.; Jomard, F.; Chrétien, P.; Schneegans, O.

2015-01-01

The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of LixCoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.

Structural, optical and ac electrical characterization of CBD synthesized NiO thin films: Influence of thickness

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-09-01

We have studied the electrical conductivity, dielectric relaxation mechanism and impedance spectroscopy characteristics of nickel oxide (NiO) thin films synthesized by chemical bath deposition (CBD) method. Thickness dependent structural, optical and ac electrical characterization has been carried out and deposition time was varied to control the thickness. The material has been characterized using X-ray diffraction and UV-VIS spectrophotometer. Impedance spectroscopy analysis confirmed enhancement of ac conductivity and dielectric constant for films deposited with higher deposition time. Decrease of grain size in thicker films were confirmed from XRD analysis and activation energy of the material for electrical charge hopping process was increased with thickness of the film. Decrease in band gap in thicker films were observed which could be associated with creation of additional energy levels in the band gap of the material. Cole-Cole plot shows contribution of both grain and grain boundary towards total resistance and capacitance. The overall resistance was found to decrease from 14.6 × 105 Ω for 30 min deposited film ( 120 nm thick) to 2.42 × 105 Ω for 120 min deposited film ( 307 nm thick). Activation energy value to electrical conduction process evaluated from conductivity data was found to decrease with thickness. Identical result was obtained from relaxation time approach suggesting hopping mechanism of charge carriers.

Thermophysical Properties of Five Industrial Steels in the Solid and Liquid Phase

NASA Astrophysics Data System (ADS)

Wilthan, B.; Schützenhöfer, W.; Pottlacher, G.

2017-07-01

The need for characterization of thermophysical properties of steel was addressed in the FFG-Bridge Project 810999 in cooperation with our partner from industry, Böhler Edelstahl GmbH & Co KG. To optimize numerical simulations of production processes such as plastic deformation or remelting, additional and more accurate thermophysical property data were necessary for the group of steels under investigation. With the fast ohmic pulse heating circuit system and a commercial high-temperature Differential Scanning Calorimeter at Graz University of Technology, we were able to measure the temperature-dependent specific electrical resistivity and specific enthalpy for a set of five high alloyed steels: E105, M314, M315, P800, and V320 from room temperature up into the liquid phase. The mechanical properties of those steels make sample preparation an additional challenge. The described experimental approach typically uses electrically conducting wire-shaped specimen with a melting point high enough for the implemented pyrometric temperature measurement. The samples investigated here are too brittle to be drawn as wires and could only be cut into rectangular specimen by Electrical Discharge Machining. Even for those samples all electrical signals and the temperature signal can be recorded with proper alignment of the pyrometer. For each material under investigation, a set of data including chemical composition, solidus and liquidus temperature, enthalpy, electrical resistivity, and thermal diffusivity as a function of temperature will be reported.

Magnetic field effect on the electrical resistivity of Y1-xNixBa2Cu3O7-δ superconductor

NASA Astrophysics Data System (ADS)

Hadi-Sichani, Behnaz; Shakeripour, Hamideh; Salamati, Hadi

2018-06-01

The Ni- substituted Y1-xNixBa2Cu3O7-δ high temperature superconducting samples with 0 ≤ x < 0.01 were synthesized by the standard solid-state reaction. The temperature dependent resistivity of the samples was measured under magnetic fields in the range of zero to 1 Tesla, applied perpendicular to the current direction. To study of magnetoresistance is one of the most important ways to investigate the intergranular nature of superconducting materials. The resistive transition is made of two parts. The first- unaffected to applied magnetic field part which is near the onset of superconductivity. This region is due to superconductivity in grains. The second- broaden tail part which is due to the connectivity of the grains. At temperatures close to Tc 0, (ρ = 0), under applied magnetic fields, weak links are affected and the vortices are penetrated and move inside the intergranular and then the tail part is broaden. This broadening part observed in the electrical resistivity, ρ(T), and in the derivative of the electrical resistivity, dρ/dT, becomes too small or even absent in Ni doped samples. For pure sample, Tc 0 was around 90 K; by applying a magnetic field H = 0.3 T it shifted to 40 K. This broadening is 91.4 K to 80 K for x = 0.002 and 91.7 K to 85 K for x = 0.004 samples. We found an optimal value of Ni doping concentration which improves the coupling of the grains. Then, vortices get strongly pinned. These observations suggest that the Ni substitution can reduce the weak links and increase the Jc values of these superconductors.

Programmable Analog Memory Resistors For Electronic Neural Networks

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni; Thakoor, Sarita; Daud, Taher; Thakoor, Anilkumar P.

1990-01-01

Electrical resistance of new solid-state device altered repeatedly by suitable control signals, yet remains at steady value when control signal removed. Resistance set at low value ("on" state), high value ("off" state), or at any convenient intermediate value and left there until new value desired. Circuits of this type particularly useful in nonvolatile, associative electronic memories based on models of neural networks. Such programmable analog memory resistors ideally suited as synaptic interconnects in "self-learning" neural nets. Operation of device depends on electrochromic property of WO3, which when pure is insulator. Potential uses include nonvolatile, erasable, electronically programmable read-only memories.

46 CFR 111.01-11 - Corrosion-resistant parts.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Corrosion-resistant parts. 111.01-11 Section 111.01-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS General § 111.01-11 Corrosion-resistant parts. Each enclosure and part of electric...

46 CFR 111.01-11 - Corrosion-resistant parts.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Corrosion-resistant parts. 111.01-11 Section 111.01-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS General § 111.01-11 Corrosion-resistant parts. Each enclosure and part of electric...

46 CFR 111.01-11 - Corrosion-resistant parts.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Corrosion-resistant parts. 111.01-11 Section 111.01-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS General § 111.01-11 Corrosion-resistant parts. Each enclosure and part of electric...

46 CFR 111.01-11 - Corrosion-resistant parts.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Corrosion-resistant parts. 111.01-11 Section 111.01-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS General § 111.01-11 Corrosion-resistant parts. Each enclosure and part of electric...

Imaging of Ground Ice with Surface-Based Geophysics

DTIC Science & Technology

2015-10-01

terrains. Electrical Resistivity Tomography (ERT), in particular, has been effective for imaging ground ice. ERT measures the ability of materials to...13 2.2.1 Electrical resistivity tomography (ERT...Engineer Research and Development Center ERT Electrical Resistivity Tomography GPS Global Positioning System LiDAR Light Detection and Ranging SIPRE

46 CFR 111.01-11 - Corrosion-resistant parts.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Corrosion-resistant parts. 111.01-11 Section 111.01-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS General § 111.01-11 Corrosion-resistant parts. Each enclosure and part of electric...

Thermal-electrical properties and resistance stability of silver coated yarns

NASA Astrophysics Data System (ADS)

Li, Yafang; Liu, Hao; Li, Xiaojiu

2017-03-01

Thermal-electrical properties and resistance stability of silver yarns was researched to evaluate the performance be a heating element. Three samples of silver coated yarns with different linear density and electrical resistivity, which obtained by market. Silver coated yarns were placed at the high temperature condition for ageing. The electrical resistances of yarns were increased with the ageing process. The infrared photography instrument was used to measurement the temperature variation of silver coated yarns by applied different current on. The result shows that the temperature rise with the power increases.

Electrical Resistivity Measurements: a Review

NASA Astrophysics Data System (ADS)

Singh, Yadunath

World-wide interest on the use of ceramic materials for aerospace and other advanced engineering applications, has led to the need for inspection techniques capable of detecting unusually electrical and thermal anomalies in these compounds. Modern ceramic materials offer many attractive physical, electrical and mechanical properties for a wide and rapidly growing range of industrial applications; moreover specific use may be made of their electrical resistance, chemical resistance, and thermal barrier properties. In this review, we report the development and various techniques for the resistivity measurement of solid kind of samples.

Wiedemann-Franz law and nonvanishing temperature scale across the field-tuned quantum critical point of YbRh2Si2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reid, J.-Ph.; Tanatar, Makariy; Daou, R.

2014-01-23

The in-plane thermal conductivity kappa and electrical resistivity rho of the heavy-fermion metal YbRh2Si2 were measured down to 50 mK for magnetic fields H parallel and perpendicular to the tetragonal c axis, through the field-tuned quantum critical point H-c, at which antiferromagnetic order ends. The thermal and electrical resistivities, w L0T/kappa and rho, show a linear temperature dependence below 1 K, typical of the non-Fermi-liquid behavior found near antiferromagnetic quantum critical points, but this dependence does not persist down to T = 0. Below a characteristic temperature T-star similar or equal to 0.35 K, which depends weakly on H, w(T)more » and rho(T) both deviate downward and converge as T -> 0. We propose that T-star marks the onset of short-range magnetic correlations, persisting beyond H-c. By comparing samples of different purity, we conclude that the Wiedemann-Franz law holds in YbRh2Si2, even at H-c, implying that no fundamental breakdown of quasiparticle behavior occurs in this material. The overall phenomenology of heat and charge transport in YbRh2Si2 is similar to that observed in the heavy-fermion metal CeCoIn5, near its own field-tuned quantum critical point.« less

30 CFR 7.407 - Test for flame resistance of electric cables and cable splices.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Test for flame resistance of electric cables... Electric Cables, Signaling Cables, and Cable Splice Kits § 7.407 Test for flame resistance of electric... a minimum of 24 hours at a temperature of 70 ±10 °F (21.1 ±5.5 °C) and a relative humidity of 55 ±10...

30 CFR 7.407 - Test for flame resistance of electric cables and cable splices.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Test for flame resistance of electric cables... Electric Cables, Signaling Cables, and Cable Splice Kits § 7.407 Test for flame resistance of electric... a minimum of 24 hours at a temperature of 70 ±10 °F (21.1 ±5.5 °C) and a relative humidity of 55 ±10...

30 CFR 7.407 - Test for flame resistance of electric cables and cable splices.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Test for flame resistance of electric cables... Electric Cables, Signaling Cables, and Cable Splice Kits § 7.407 Test for flame resistance of electric... a minimum of 24 hours at a temperature of 70 ±10 °F (21.1 ±5.5 °C) and a relative humidity of 55 ±10...

Electrical transport properties in Fe-Cr nanocluster-assembled granular films

NASA Astrophysics Data System (ADS)

Wang, Xiong-Zhi; Wang, Lai-Sen; Zhang, Qin-Fu; Liu, Xiang; Xie, Jia; Su, A.-Mei; Zheng, Hong-Fei; Peng, Dong-Liang

2017-09-01

The Fe100-xCrx nanocluster-assembled granular films with Cr atomic fraction (x) ranging from 0 to 100 were fabricated by using a plasma-gas-condensation cluster deposition system. The TEM characterization revealed that the uniform Fe clusters were coated with a Cr layer to form a Fe-Cr core-shell structure. Then, the as-prepared Fe100-xCrx nanoclusters were randomly assembled into a granular film in vacuum environments with increasing the deposition time. Because of the competition between interfacial resistance and shunting effect of Cr layer, the room temperature resistivity of the Fe100-xCrx nanocluster-assembled granular films first increased and then decreased with increasing the Cr atomic fraction (x), and revealed a maximum of 2 × 104 μΩ cm at x = 26 at.%. The temperature-dependent longitudinal resistivity (ρxx), magnetoresistance (MR) effect and anomalous Hall effect (AHE) of these Fe100-xCrx nanocluster-assembled granular films were also studied systematically. As the x increased from 0 to 100, the ρxx of all samples firstly decreased and then increased with increasing the measuring temperature. The dependence of ρxx on temperature could be well addressed by a mechanism incorporated for the fluctuation-induced-tunneling (FIT) conduction process and temperature-dependent scattering effect. It was found that the anomalous Hall effect (AHE) had no legible scaling relation in Fe100-xCrx nanocluster-assembled granular films. However, after deducting the contribution of tunneling effect, the scaling relation was unambiguous. Additionally, the Fe100-xCrx nanocluster-assembled granular films revealed a small negative magnetoresistance (MR), which decreased with the increase of x. The detailed physical mechanism of the electrical transport properties in these Fe100-xCrx nanocluster-assembled granular films was also studied.

Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films

NASA Astrophysics Data System (ADS)

Rosário, Carlos M. M.; Thöner, Bo; Schönhals, Alexander; Menzel, Stephan; Wuttig, Matthias; Waser, Rainer; Sobolev, Nikolai A.; Wouters, Dirk J.

2018-05-01

Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content in a local region of these conductive filaments. However, a deep understanding of the filaments' composition and structure is still a matter of debate. We approached the problem by comparing the electronic transport, at temperatures from 300 K down to 2 K, in the filaments and in TaOx films exhibiting a substoichiometric oxygen content. The filaments were created in Ta (15 nm)/Ta2O5 (5 nm)/Pt crossbar ReRAM structures. In the TaOx thin films with various oxygen contents, the in-plane transport was studied. There is a close similarity between the electrical properties of the conductive filaments in the ReRAM devices and of the TaOx films with x ˜ 1, evidencing also no dimensionality difference for the electrical transport. More specifically, for both systems there are two different conduction processes: one in the higher temperature range (from 50 K up to ˜300 K), where the conductivity follows a √{ T } dependence, and one at lower temperatures (<50 K), where the conductivity follows the exp(-1 / √{ T } ) dependence. This suggests a strong similarity between the material composition and structure of the filaments and those of the substoichiometric TaOx films. We also discuss the temperature dependence of the conductivity in the framework of possible transport mechanisms, mainly of those normally observed for granular metals.

Quantitative impact of hydrothermal alteration on electrical resistivity in geothermal systems from a joint analysis of laboratory measurements and borehole data in Krafla area, N-E Iceland

NASA Astrophysics Data System (ADS)

Lévy, Léa; Páll Hersir, Gylfi; Flóvenz, Ólafur; Gibert, Benoit; Pézard, Philippe; Sigmundsson, Freysteinn; Briole, Pierre

2016-04-01

Rock permeability and fluid temperature are the two most decisive factors for a successful geothermal drilling. While those parameters are only measured from drilling, they might be estimated on the basis of their impact on electrical resistivity that might be imaged from surface soundings, for example through TEM (Transient Electro Magnetic) down to one km depth. The electrical conductivity of reservoir rocks is the sum of a volume term depending on fluid parameters and a surface term related to rock alteration. Understanding the link between electrical resistivity and geothermal key parameters requires the knowledge of hydrothermal alteration and its petrophysical signature with the Cation Exchange Capacity (CEC). Fluid-rock interactions related to hydrothermal circulation trigger the precipitation of alteration minerals, which are both witnesses of the temperature at the time of reaction and new paths for the electrical current. Alteration minerals include zeolites, smectites, chlorites, epidotes and amphiboles among which low temperatures parageneses are often the most conductive. The CEC of these mineral phases contributes to account for surface conductivity occuring at the water-rock interface. In cooling geothermal systems, these minerals constitute in petrophysical terms and from surface electrical conduction a memory of the equilibrium phase revealed from electrical probing at all scales. The qualitative impact of alteration minerals on resistivity structure has been studied over the years in the Icelandic geothermal context. In this work, the CEC impact on pore surfaces electrical conductivity is studied quantitatively at the borehole scale, where several types of volcanic rocks are mixed together, with various degrees of alteration and porosity. Five boreholes located within a few km at the Krafla volcano, Northeast Iceland, constitute the basis for this study. The deepest and reference hole, KJ-18, provides cuttings of rock and logging data down to 2215 m depth; CEC measurements performed on cuttings show. KH-1 and KH-3 have cores and logs in the top 200 m only. Boreholes KH-5 and KH-6 sample cores with higher temperature alteration minerals down to 600 m. Together, these 4 shallow holes cover the diversity of rock types and alterations facies found in KJ-18. The petrophysical calibration obtained from cores will then be upscaled to log data analysis in KJ-18: porosity, formation factor, permeability, acoustic velocity, electrical surface conduction at different temperatures and CEC. This research is supported by the IMAGE FP7 EC project (Integrated Methods for Advanced Geothermal Exploration, grant agreement No. 608553).

Histamine and thrombin modulate endothelial focal adhesion through centripetal and centrifugal forces.

PubMed Central

Moy, A B; Van Engelenhoven, J; Bodmer, J; Kamath, J; Keese, C; Giaever, I; Shasby, S; Shasby, D M

1996-01-01

We examined the contribution of actin-myosin contraction to the modulation of human umbilical vein endothelial cell focal adhesion caused by histamine and thrombin. Focal adhesion was measured as the electrical resistance across a cultured monolayer grown on a microelectrode. Actin-myosin contraction was measured as isometric tension of cultured monolayers grown on a collagen gel. Histamine immediately decreased electrical resistance but returned to basal levels within 3-5 min. Histamine did not increase isometric tension. Thrombin also immediately decreased electrical resistance, but, however, resistance did not return to basal levels for 40-60 min. Thrombin also increased isometric tension, ML-7, an inhibitor of myosin light chain kinase, prevented increases in myosin light chain phosphorylation and increases in tension development in cells exposed to thrombin. ML-7 did not prevent a decline in electrical resistance in cells exposed to thrombin. Instead, ML-7 restored the electrical resistance to basal levels in a shorter period of time (20 min) than cells exposed to thrombin alone. Also, histamine subsequently increased electrical resistance to above basal levels, and thrombin initiated an increase in resistance during the time of peak tension development. Hence, histamine and thrombin modulate endothelial cell focal adhesion through centripetal and centrifugal forces. PMID:8613524

Electrical behavior of natural manganese dioxide (NMD)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorgulho, H.F.; Fernandes, R.Z.D.; Pernaut, J.M.

NMD samples from Brazil have been submitted to magnetic and particle size separations and characterized by X-ray diffraction and fluorescence and thermogravimetric analyses. Results showed that simple physical treatments can lead to more than 60% enriched MnO{sub 2} materials which could satisfy some electrochemical applications. The electrical properties of the samples conditioned as pressed pellets have been investigated by four-points direct current probe and impedance spectroscopy, varying the conditions of preparation and measurement. It is proposed that the higher frequency impedance is equivalent to the intrinsic electronic resistance of the MnO{sub 2} phases while at lower frequencies occurs an interphasemore » charge separation coupled with a possible ionic transport. The corresponding contact resistance depends on the particle size distribution of the material, the compactation pressure of pellets and the iron content of the materials. The interphase dielectric relaxation does not behave ideally; the depression of the impedance semicircles as shown in the Nyquist plane is assumed to be related to the roughness of the bulk interfaces. Recent developments have shown the possibility of using manganese oxides as reversible electrodes for battery or supercapacitor applications for electrical vehicle. In these perspectives it is important to study the electrical and electrochemical properties of NMD in order to estimate its suitability for this kind of applications.« less

Synthesis, physical and chemical properties, and potential applications of graphite fluoride fibers

NASA Technical Reports Server (NTRS)

Hung, Ching-Cheh; Long, Martin; Stahl, Mark

1987-01-01

Graphite fluoride fibers can be produced by fluorinating pristine or intercalated graphite fibers. The higher the degree of graphitization of the fibers, the higher the temperature needed to reach the same degree of fluorination. Pitched based fibers were fluorinated to flourine-to-carbon atom rations between 0 and 1. The graphite fluoride fibers with a fluorine-to-carbon atom ration near 1 have extensive visible structural damage. On the other hand, fluorination of fibers pretreated with bromine or fluorine and bromine result in fibers with a fluorine-to-carbon atom ratio nearly equal to 0.5 with no visible structural damage. The electrical resistivity of the fibers is dependent upon the fluorine to carbon atom ratio and ranged from .01 to 10 to the 11th ohm/cm. The thermal conductivity of these fibers ranged from 5 to 73 W/m-k, which is much larger than the thermal conductivity of glass, which is the regular filler in epoxy composites. If graphite fluoride fibers are used as a filler in epoxy or PTFE, the resulting composite may be a high thermal conductivity material with an electrical resistivity in either the insulator or semiconductor range. The electrically insulating product may provide heat transfer with lower temperature gradients than many current electrical insulators. Potential applications are presented.

Evaluation of pulsed electric fields technology for liquid whole egg pasteurization.

PubMed

Monfort, S; Gayán, E; Raso, J; Condón, S; Alvarez, I

2010-10-01

This investigation evaluated the lethal efficiency of pulsed electric fields (PEFs) to pasteurize liquid whole egg (LWE). To achieve this aim, we describe the inactivation of Salmonella Enteritidis and the heat resistant Salmonella Senftenberg 775 W in terms of treatment time and specific energy at electric field strengths ranging from 20 to 45 kV/cm. Based on our results, the target microorganism for this technology in LWE varied with intensity of the PEF treatment. For electric field strengths greater than 25 kV/cm, Salmonella Enteritidis was the most PEF-resistant strain. For this Salmonella serovar the level of inactivation depended only on the specific energy applied: i.e., 106, 272, and 472 kJ/kg for 1, 2, and 3 Log(10) reductions, respectively. The developed mathematical equations based on the Weibull distribution permit estimations of maximum inactivation level of 1.9 Log(10) cycles of the target Salmonella serovar in the best-case scenario: 250 kJ/kg and 25 kV/cm. This level of inactivation indicates that PEF technology by itself cannot guarantee the security of LWE based on USDA and European regulations. The occurrence of cell damage due to PEF in the Salmonella population opens the possibility of designing combined processes enabling increased microbial lethality in LWE. 2010 Elsevier Ltd. All rights reserved.

Piezoelectric effect in non-uniform strained carbon nanotubes

NASA Astrophysics Data System (ADS)

Ilina, M. V.; Blinov, Yu F.; Ilin, O. I.; Rudyk, N. N.; Ageev, O. A.

2017-10-01

The piezoelectric effect in non-uniform strained carbon nanotubes (CNTs) has been studied. It is shown that the magnitude of strained CNTs surface potential depends on a strain value. It is established that the resistance of CNT also depends on the strain and internal electric field, which leads to the hysteresis in the current-voltage characteristics. Analysis of experimental studies of the non-uniform strained CNT with a diameter of 92 nm and a height of 2.1 μm allowed us to estimate the piezoelectric coefficient 0.107 ± 0.032 C/m2.

Electrical and structural properties of In-implanted Si 1–xGe x alloys

DOE PAGES

Feng, Ruixing; Kremer, F.; Sprouster, D. J.; ...

2016-01-14

Here, we report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si 1–xGe x alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with the In atomic environment determined by X-ray absorption spectroscopy, we observed the transition from electrically active, substitutional In at low In concentration to electrically inactive metallic In at high In concentration. The In solid-solubility limit has been quantified and was dependent on the Si 1–xGe x alloy stoichiometry; the solid-solubility limit increased as the Ge fraction increased. This result was consistent with densitymore » functional theory calculations of two In atoms in a Si 1–xGe x supercell that demonstrated that In–In pairing was energetically favorable for x ≲ 0.7 and energetically unfavorable for x ≳ 0.7. Transmission electron microscopy imaging further complemented the results described earlier with the In concentration and Si 1–xGe x alloy stoichiometry dependencies readily visible. We have demonstrated that low resistivity values can be achieved with In implantation in Si 1–xGe x alloys, and this combination of dopant and substrate represents an effective doping protocol.« less

High Electrical Conductivity of Single Metal-Organic Chains.

PubMed

Ares, Pablo; Amo-Ochoa, Pilar; Soler, José M; Palacios, Juan José; Gómez-Herrero, Julio; Zamora, Félix

2018-05-01

Molecular wires are essential components for future nanoscale electronics. However, the preparation of individual long conductive molecules is still a challenge. MMX metal-organic polymers are quasi-1D sequences of single halide atoms (X) bridging subunits with two metal ions (MM) connected by organic ligands. They are excellent electrical conductors as bulk macroscopic crystals and as nanoribbons. However, according to theoretical calculations, the electrical conductance found in the experiments should be even higher. Here, a novel and simple drop-casting procedure to isolate bundles of few to single MMX chains is demonstrated. Furthermore, an exponential dependence of the electrical resistance of one or two MMX chains as a function of their length that does not agree with predictions based on their theoretical band structure is reported. This dependence is attributed to strong Anderson localization originated by structural defects. Theoretical modeling confirms that the current is limited by structural defects, mainly vacancies of iodine atoms, through which the current is constrained to flow. Nevertheless, measurable electrical transport along distances beyond 250 nm surpasses that of all other molecular wires reported so far. This work places in perspective the role of defects in 1D wires and their importance for molecular electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Steady-state analytical model of suspended p-type 3C-SiC bridges under consideration of Joule heating

NASA Astrophysics Data System (ADS)

Balakrishnan, Vivekananthan; Dinh, Toan; Phan, Hoang-Phuong; Kozeki, Takahiro; Namazu, Takahiro; Viet Dao, Dzung; Nguyen, Nam-Trung

2017-07-01

This paper reports an analytical model and its validation for a released microscale heater made of 3C-SiC thin films. A model for the equivalent electrical and thermal parameters was developed for the two-layer multi-segment heat and electric conduction. The model is based on a 1D energy equation, which considers the temperature-dependent resistivity and allows for the prediction of voltage-current and power-current characteristics of the microheater. The steady-state analytical model was validated by experimental characterization. The results, in particular the nonlinearity caused by temperature dependency, are in good agreement. The low power consumption of the order of 0.18 mW at approximately 310 K indicates the potential use of the structure as thermal sensors in portable applications.

Characterization of polymer, DNA-based, and silk thin film resistivities and of DNA-based films prepared for enhanced electrical conductivity

NASA Astrophysics Data System (ADS)

Yaney, Perry P.; Ouchen, Fahima; Grote, James G.

2009-08-01

DC resistivity studies were carried out on biopolymer films of DNA-CTMA and silk fibroin, and on selected traditional polymer films, including PMMA and APC. Films of DNA-CTMA versus molecular weight and with conductive dopants PCBM, BAYTRON P and ammonium tetrachloroplatinate are reported. The films were spin coated on glass slides configured for measurements of volume dc resistance. The measurements used the alternating polarity method to record the applied voltage-dependent current independent of charging and background currents. The Arrhenius equation plus a constant was fitted to the conductivity versus temperature data of the polymers and the non-doped DNA-based biopolymers with activation energies ranging from 0.8 to 1.4 eV.

dc Resistivity of Quantum Critical, Charge Density Wave States from Gauge-Gravity Duality

NASA Astrophysics Data System (ADS)

Amoretti, Andrea; Areán, Daniel; Goutéraux, Blaise; Musso, Daniele

2018-04-01

In contrast to metals with weak disorder, the resistivity of weakly pinned charge density waves (CDWs) is not controlled by irrelevant processes relaxing momentum. Instead, the leading contribution is governed by incoherent, diffusive processes which do not drag momentum and can be evaluated in the clean limit. We compute analytically the dc resistivity for a family of holographic charge density wave quantum critical phases and discuss its temperature scaling. Depending on the critical exponents, the ground state can be conducting or insulating. We connect our results to dc electrical transport in underdoped cuprate high Tc superconductors. We conclude by speculating on the possible relevance of unstable, semilocally critical CDW states to the strange metallic region.

Electrical Measurements on Iridium Dioxide Nanorods

NASA Astrophysics Data System (ADS)

Lin, Y. H.; Lee, T. C.; Lin, J. J.; Chang, H. M.; Huang, Y. S.

2006-09-01

Iridium dioxide (IrO2) nanorods have been prepared by metal-organic chemical vapor deposition method. Applying the standard electron-beam lithography technique, a single nanorod with a diameter of 110 nm is contacted by three Cr/Au fingers from above. The resistance measurements on this nanorod have been performed between 10 and 300 K, using different probe configurations. We observe that the resistivity ρ of the nanorod has a value ⩽ 120 μΩ cm at 300 K. On the other hand, the temperature dependence of the contact resistance R obeys the law logR ∝ T-1/2 below 100 K. The conduction process through the contact is ascribed to the transport of electrons via hopping in granular metals accidentally formed at the contact region.

dc Resistivity of Quantum Critical, Charge Density Wave States from Gauge-Gravity Duality.

PubMed

Amoretti, Andrea; Areán, Daniel; Goutéraux, Blaise; Musso, Daniele

2018-04-27

In contrast to metals with weak disorder, the resistivity of weakly pinned charge density waves (CDWs) is not controlled by irrelevant processes relaxing momentum. Instead, the leading contribution is governed by incoherent, diffusive processes which do not drag momentum and can be evaluated in the clean limit. We compute analytically the dc resistivity for a family of holographic charge density wave quantum critical phases and discuss its temperature scaling. Depending on the critical exponents, the ground state can be conducting or insulating. We connect our results to dc electrical transport in underdoped cuprate high T_{c} superconductors. We conclude by speculating on the possible relevance of unstable, semilocally critical CDW states to the strange metallic region.

State-of-health monitoring of lithium-ion batteries in electric vehicles by on-board internal resistance estimation

NASA Astrophysics Data System (ADS)

Remmlinger, Jürgen; Buchholz, Michael; Meiler, Markus; Bernreuter, Peter; Dietmayer, Klaus

For reliable and safe operation of lithium-ion batteries in electric or hybrid vehicles, diagnosis of the cell degradation is necessary. This can be achieved by monitoring the increase of the internal resistance of the battery cells over the whole lifetime of the battery. In this paper, a method to identify the internal resistance in a hybrid vehicle is presented. Therefore, a special purpose model deduced from an equivalent circuit is developed. This model contains parameters depending on the degradation of the battery cell. To achieve the required robustness and stable results under these conditions, the method uses specific signal intervals occurring during normal operation of the battery in a hybrid vehicle. This identification signal has a defined timespan and occurs regularly. The identification is done on vehicle measurement data of terminal cell voltage and current collected with a usual vehicle sampling rate. Using the adapted internal resistance value in the model, a degradation index is calculated by compensating other influences, e.g. battery temperature. This task is the main challenge, as the impact of the temperature on the resistance, for example, is one order of magnitude higher than the influence of the degradation for the investigated lithium-ion cell. The developed estimation and monitoring method is validated with measurement data from single cells and shows good results and very low computational effort.

Towards an optimal contact metal for CNTFETs.

PubMed

Fediai, Artem; Ryndyk, Dmitry A; Seifert, Gotthard; Mothes, Sven; Claus, Martin; Schröter, Michael; Cuniberti, Gianaurelio

2016-05-21

Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at the scale of 10 nm, parameter-free models of electron transport become computationally prohibitively expensive. In our work we used a dedicated combination of the Green function formalism and density functional theory to perform an overall ab initio simulation of extended CNT-metal contacts of an arbitrary length (including infinite), a previously not achievable level of simulations. We provide a systematic and comprehensive discussion of metal-CNT contact properties as a function of the metal type and the contact length. We have found and been able to explain very uncommon relations between chemical, physical and electrical properties observed in CNT-metal contacts. The calculated electrical characteristics are in reasonable quantitative agreement and exhibit similar trends as the latest experimental data in terms of: (i) contact resistance for Lc = ∞, (ii) scaling of contact resistance Rc(Lc); (iii) metal-defined polarity of a CNTFET. Our results can guide technology development and contact material selection for downscaling the length of side-contacts below 10 nm.

Projected phase-change memory devices.

PubMed

Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

2015-09-03

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

Superstructure and physical properties of skutterudite-related phase CoGe1.5Se1.5

NASA Astrophysics Data System (ADS)

Liang, Y.; Fang, B.; Zhu, X. M.; Liang, M. M.

2017-03-01

CoGe1.5Se1.5 skutterudite-related phase with a homogeneity range has been synthesized by solid-state reaction. The phase purity, homogeneity range, crystal structure, thermal stability and electrical resistivity were studied. XRD data indicates that CoGe1.5Se1.5 crystallized in a modification of the skutterudite CoAs3 type structure with space group R\\bar{3} (a = b = 11.751(1) Å, c = 14.36(1) Å). HRTEM-SAED shows more information about the superstructure to confirm the rhombohedral symmetry with space group R\\bar{3}. The lattice parameter of this skutterudite-related phase was found to be dependent on the concentration of Ge and Se. CoGe1.5Se1.5 decomposed between 1073 K and 1173 K under argon atmosphere investigated by in-situ XRD, suggesting a good thermal stability. CoGe1.49Se1.42, CoGe1.43Se1.34 and CoGe1.50Se1.15 dense bulk samples were obtained by hot-press technique. The chemical composition detected by FESEM/EDS suggests the homogeneity range and the existence of voids at framework positions. The electrical resistivity of the compounds decreases with increasing temperature, acting as a semiconductor. The chemical composition has a big influence on the value of electrical resistivity and energy gap.

Mechanical Integrity of Flexible In-Zn-Sn-O Film for Flexible Transparent Electrode

NASA Astrophysics Data System (ADS)

Kim, Young Sung; Oh, Se-In; Choa, Sung-Hoon

2013-05-01

The mechanical integrity of transparent In-Zn-Sn-O (IZTO) films is investigated using outer/inner bending, stretching, and twisting tests. Amorphous IZTO films are grown using a pulsed DC magnetron sputtering system with an IZTO target on a polyimide substrate at room temperature. Changes in the optical and electrical properties of IZTO films depend on the oxygen partial pressure applied during the film deposition process. In the case of 3% oxygen partial pressure, the IZTO films exhibit s resistivity of 8.3×10-4 Ω cm and an optical transmittance of 86%. The outer bending test shows that the critical bending radius decreases from 10 to 7.5 mm when the oxygen partial pressure is increased from 1 to 3%. The inner bending test reveals that the critical bending radius of all IZTO films is 3.5 mm regardless of oxygen partial pressure. The IZTO films also show excellent mechanical reliability in the bending fatigue tests of more than 10,000 cycles. In the uniaxial stretching tests, the electrical resistance of the IZTO film does not change until a strain of 2.4% is reached. The twisting tests demonstrate that the electrical resistance of IZTO films remains unchanged up to 25°. These results suggest that IZTO films have excellent mechanical durability and flexibility in comparison with already reported crystallized indium tin oxide (ITO) films.

Thickness and microstructure effects in the optical and electrical properties of silver thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅more » fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.« less

Numerical modelling of dynamic resistance in high-temperature superconducting coated-conductor wires

NASA Astrophysics Data System (ADS)

Ainslie, Mark D.; Bumby, Chris W.; Jiang, Zhenan; Toyomoto, Ryuki; Amemiya, Naoyuki

2018-07-01

The use of superconducting wire within AC power systems is complicated by the dissipative interactions that occur when a superconductor is exposed to an alternating current and/or magnetic field, giving rise to a superconducting AC loss caused by the motion of vortices within the superconducting material. When a superconductor is exposed to an alternating field whilst carrying a constant DC transport current, a DC electrical resistance can be observed, commonly referred to as ‘dynamic resistance.’ Dynamic resistance is relevant to many potential high-temperature superconducting (HTS) applications and has been identified as critical to understanding the operating mechanism of HTS flux pump devices. In this paper, a 2D numerical model based on the finite-element method and implementing the H -formulation is used to calculate the dynamic resistance and total AC loss in a coated-conductor HTS wire carrying an arbitrary DC transport current and exposed to background AC magnetic fields up to 100 mT. The measured angular dependence of the superconducting properties of the wire are used as input data, and the model is validated using experimental data for magnetic fields perpendicular to the plane of the wire, as well as at angles of 30° and 60° to this axis. The model is used to obtain insights into the characteristics of such dynamic resistance, including its relationship with the applied current and field, the wire’s superconducting properties, the threshold field above which dynamic resistance is generated and the flux-flow resistance that arises when the total driven transport current exceeds the field-dependent critical current, I c( B ), of the wire. It is shown that the dynamic resistance can be mostly determined by the perpendicular field component with subtle differences determined by the angular dependence of the superconducting properties of the wire. The dynamic resistance in parallel fields is essentially negligible until J c is exceeded and flux-flow resistance occurs.

Hole-to-surface resistivity measurements.

USGS Publications Warehouse

Daniels, J.J.

1983-01-01

Hole-to-surface resistivity measurements over a layered volcanic tuff sequence illustrate procedures for gathering, reducing, and interpreting hole-to-surface resistivity data. The magnitude and direction of the total surface electric field resulting from a buried current source is calculated from orthogonal potential difference measurements for a grid of closely spaced stations. A contour map of these data provides a detailed map of the distribution of the electric field away from the drill hole. Resistivity anomalies can be enhanced by calculating the difference between apparent resistivities calculated from the total surface electric field and apparent resistivities for a layered earth model.-from Author

Superconducting thermoelectric generator

DOEpatents

Metzger, J.D.; El-Genk, M.S.

1998-05-05

An apparatus and method for producing electricity from heat is disclosed. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device. 4 figs.

Superconducting thermoelectric generator

DOEpatents

Metzger, J.D.; El-Genk, M.S.

1996-01-01

An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device.

Superconducting thermoelectric generator

DOEpatents

Metzger, John D.; El-Genk, Mohamed S.

1998-01-01

An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device.

Relating the Electrical Resistance of Fresh Concrete to Mixture Proportions.

PubMed

Obla, K; Hong, R; Sherman, S; Bentz, D P; Jones, S Z

2018-01-01

Characterization of fresh concrete is critical for assuring the quality of our nation's constructed infrastructure. While fresh concrete arriving at a job site in a ready-mixed concrete truck is typically characterized by measuring temperature, slump, unit weight, and air content, here the measurement of the electrical resistance of a freshly cast cylinder of concrete is investigated as a means of assessing mixture proportions, specifically cement and water contents. Both cement and water contents influence the measured electrical resistance of a sample of fresh concrete: the cement by producing ions (chiefly K + , Na + , and OH - ) that are the main source of electrical conduction; and the water by providing the main conductive pathways through which the current travels. Relating the measured electrical resistance to attributes of the mixture proportions, such as water-cement ratio by mass ( w/c ), is explored for a set of eleven different concrete mixtures prepared in the laboratory. In these mixtures, w/c , paste content, air content, fly ash content, high range water reducer dosage, and cement alkali content are all varied. Additionally, concrete electrical resistance data is supplemented by measuring the resistivity of its component pore solution obtained from 5 laboratory-prepared cement pastes with the same proportions as their corresponding concrete mixtures. Only measuring the concrete electrical resistance can provide a prediction of the mixture's paste content or the product w*c ; conversely, when pore solution resistivity is also available, w/c and water content of the concrete mixture can be reasonably assessed.

Relating the Electrical Resistance of Fresh Concrete to Mixture Proportions

PubMed Central

Obla, K.; Hong, R.; Sherman, S.; Bentz, D.P.; Jones, S.Z.

2018-01-01

Characterization of fresh concrete is critical for assuring the quality of our nation’s constructed infrastructure. While fresh concrete arriving at a job site in a ready-mixed concrete truck is typically characterized by measuring temperature, slump, unit weight, and air content, here the measurement of the electrical resistance of a freshly cast cylinder of concrete is investigated as a means of assessing mixture proportions, specifically cement and water contents. Both cement and water contents influence the measured electrical resistance of a sample of fresh concrete: the cement by producing ions (chiefly K+, Na+, and OH-) that are the main source of electrical conduction; and the water by providing the main conductive pathways through which the current travels. Relating the measured electrical resistance to attributes of the mixture proportions, such as water-cement ratio by mass (w/c), is explored for a set of eleven different concrete mixtures prepared in the laboratory. In these mixtures, w/c, paste content, air content, fly ash content, high range water reducer dosage, and cement alkali content are all varied. Additionally, concrete electrical resistance data is supplemented by measuring the resistivity of its component pore solution obtained from 5 laboratory-prepared cement pastes with the same proportions as their corresponding concrete mixtures. Only measuring the concrete electrical resistance can provide a prediction of the mixture’s paste content or the product w*c; conversely, when pore solution resistivity is also available, w/c and water content of the concrete mixture can be reasonably assessed. PMID:29882546

The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

NASA Astrophysics Data System (ADS)

Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun

2014-04-01

The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10-3 Ω cm for undoped ZnO to 2.05 × 10-3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

Reconstitution of Biological Molecular generators of electric current. Bacteriorhodopsin.

PubMed

Drachev, L A; Frolov, V N; Kaulen, A D; Liberman, E A; Ostroumov, S A; Plakunova, V G; Semenov, A Y; Skulachev, V P

1976-11-25

1. Photoinduced generation of electric current by bacteriorhodopsin, incorporated into the planar phospholipid membrane, has been directly measured with conventional electrometer techniques. 2. Two methods for bacteriorhodopsin incorporation have been developed: (a) formation of planar membrane from a mixture of decane solution of phospholipids and of the fraction of violet fragments of the Halobacterium halobium membrane (bacteriorhodopsin sheets), and (b) adhesion of bacteriorhodopsin-containing reconstituted spherical membranes (proteoliposomes) to the planar membrane in the presence of Ca2+ or some other cations. In both cases, illumination was found to induce electric current generation directed across the planar membrane, an effect which was measured by macroelectrodes immersed into electrolyte solutions on both sides of the membrane. 3. The maximal values of the transmembrane electric potential were of about 150 mV at a current of about 10(-11) A. The electromotive force measured by means of counterbalancing the photoeffect by an external battery, was found to reach the value of 300 mV. 4. The action spectrum of the photoeffect coincides with the bacteriorhodopsin absorption spectrum (maximum about 570 nm). 5. Both components of the electrochemical potential of H+ ions (electric potential and delta pH) across the planar membrane affect the bacteriorhodopsin photoelectric response in a fashion which could be expected if bacteriorhodopsin were a light-dependent electrogenic proton pump. 6. La3+ ions were shown to inhibit operation of those bacteriorhodopsin which pump out H+ ions from the La3+-containing compartment. 7. The photoeffect, mediated by proteoliposomes associated with thick planar membrane, is decreased by gramicidin A at concentrations which do not influence the planar membrane resistance in the light. On the contrary, a protonophorous uncoupler, trichlorocarbonylcyanidephenylhydrazone, decreases the photoeffect only if it is added at a concentration lowering the light resistance. The dark resistance is shown to be higher than the light one, and decreases to the light level by gramicidin. 8. A simple equivalent electric scheme consistent with the above results has been proposed.

Graphene oxide-dependent growth and self-aggregation into a hydrogel complex of exoelectrogenic bacteria

PubMed Central

Yoshida, Naoko; Miyata, Yasushi; Doi, Kasumi; Goto, Yuko; Nagao, Yuji; Tero, Ryugo; Hiraishi, Akira

2016-01-01

Graphene oxide (GO) is reduced by certain exoelectrogenic bacteria, but its effects on bacterial growth and metabolism are a controversial issue. This study aimed to determine whether GO functions as the terminal electron acceptor to allow specific growth of and electricity production by exoelectrogenic bacteria. Cultivation of environmental samples with GO and acetate as the sole substrate could specifically enrich exoelectrogenic bacteria with Geobacter species predominating (51–68% of the total populations). Interestingly, bacteria in these cultures self-aggregated into a conductive hydrogel complex together with biologically reduced GO (rGO). A novel GO-respiring bacterium designated Geobacter sp. strain R4 was isolated from this hydrogel complex. This organism exhibited stable electricity production at >1000 μA/cm3 (at 200 mV vs Ag/AgCl) for more than 60 d via rGO while temporary electricity production using graphite felt. The better electricity production depends upon the characteristics of rGO such as a large surface area for biofilm growth, greater capacitance, and smaller internal resistance. This is the first report to demonstrate GO-dependent growth of exoelectrogenic bacteria while forming a conductive hydrogel complex with rGO. The simple put-and-wait process leading to the formation of hydrogel complexes of rGO and exoelectrogens will enable wider applications of GO to bioelectrochemical systems. PMID:26899353

Electrical resistivity of liquid lanthanides using charge hard sphere system

NASA Astrophysics Data System (ADS)

Sonvane, Y. A.; Thakor, P. B.; Jani, A. R.

2013-06-01

In the present paper, we have studied electrical resistivity (ρ) of liquid lanthanides. To describe the structural information, the structure factor S(q) due to the charged hard sphere (CHS) reference systems is used along with our newly constructed model potential. To see the influence of exchange and correlation effect on the electrical resistivity (ρ) have used different local field correction functions like Hartree (H), Sarkar et al (S) and Taylor (T). Lastly we conclude that the proper choice of the model potential along with local field correction function plays a vital role to the study of the electrical resistivity (ρ).

Electrical Connector Mechanical Seating Sensor

NASA Technical Reports Server (NTRS)

Arens, Ellen; Captain, Janine; Youngquist, Robert

2011-01-01

A sensor provides a measurement of the degree of seating of an electrical connector. This sensor provides a number of discrete distances that a plug is inserted into a socket or receptacle. The number of measurements is equal to the number of pins available in the connector for sensing. On at least two occasions, the Shuttle Program has suffered serious time delays and incurred excessive costs simply because a plug was not seated well within a receptacle. Two methods were designed to address this problem: (1) the resistive pin technique and (2) the discrete length pins technique. In the resistive pin approach, a standard pin in a male connector is replaced with a pin that has a uniform resistivity along its length. This provides a variable resistance on that pin that is dependent on how far the pin is inserted into a socket. This is essentially a linear potentiometer. The discrete approach uses a pin (or a few pins) in the connector as a displacement indicator by truncating the pin length so it sits shorter in the connector than the other pins. A loss of signal on this pin would indicate a discrete amount of displacement of the connector. This approach would only give discrete values of connector displacement, and at least one pin would be needed for each displacement value that would be of interest.

Optical and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films

NASA Astrophysics Data System (ADS)

Gao, Y. Q.; Huang, Z. M.; Hou, Y.; Wu, J.; Chu, J. H.

2013-12-01

Mn1.56Co0.96Ni0.48O4 (MCN) films with different layers have been prepared on Al2O3 substrate by chemical solution deposition method. The microstructures, optical and electrical properties of the films are investigated. X-ray diffraction and microstructure analyses show good crystallization and both the crystalline quality and the grain size are improved with the increasing thickness of the films. Mid-infrared optical properties of MCN films have been investigated using transmission spectra. The results show the red shift of absorption with the increasing film thickness and the energy gap Eg decrease from 0.6422 eV to 0.6354 eV. All the MCN films show an exponential decrease in the resistivity with increasing temperature within the measured range. The temperature dependence resistivity can be described by the small polarons hopping model. Using this model, the characteristic temperature T0 and activation energy E of the MCN films were derived. With the film thickness increase, the T0 and E of the MCN films increase. The calculated room temperature coefficient of resistance (TCR) of MCN film with 100 layers is -3.5% K-1. The MCN films showed appropriate resistance and high value of TCR, these advantages make them very preponderant for thermal sensors.

Resistive foil edge grading for accelerator and other high voltage structures

DOEpatents

Caporaso, George J.; Sampayan, Stephen F.; Sanders, David M.

2014-06-10

In a structure or device having a pair of electrical conductors separated by an insulator across which a voltage is placed, resistive layers are formed around the conductors to force the electric potential within the insulator to distribute more uniformly so as to decrease or eliminate electric field enhancement at the conductor edges. This is done by utilizing the properties of resistive layers to allow the voltage on the electrode to diffuse outwards, reducing the field stress at the conductor edge. Preferably, the resistive layer has a tapered resistivity, with a lower resistivity adjacent to the conductor and a higher resistivity away from the conductor. Generally, a resistive path across the insulator is provided, preferably by providing a resistive region in the bulk of the insulator, with the resistive layer extending over the resistive region.

Electrical resistivity and thermopower measurements of the hole- and electron-doped cobaltites LnCoO3

NASA Astrophysics Data System (ADS)

Jirák, Z.; Hejtmánek, J.; Knížek, K.; Veverka, M.

2008-07-01

Two perovskite cobaltites, LaCoO3 and DyCoO3 , which are border compounds with respect to the Ln size, were investigated by the electric resistivity and thermopower measurements up to 800-1000 K. Special attention was given to effects of extra holes or electrons, introduced by light doping of Co sites by Mg2+ or Ti4+ ions. The experiments on the La-based compounds were complemented by magnetic measurements. The study shows that both kinds of charge carriers induce magnetic states on surrounding Co3+ sites and form thus thermally stable polarons of large total spin. Their itinerancy is characterized by low-temperature resistivity, which is of Arrhenius type ρ˜exp(EA/kT) for the hole (Co4+) -doped samples, while an unusual dependence ρ˜1/Tν (n=8-10) is observed for the electron (Co2+) -doped samples. At higher temperatures, additional hole carriers are massively populated in the Co3+ background, leading to a resistivity drop. This transition become evident at ˜300K and 450 K and culminates at TI-M=540 and 780 K for the La- and Dy-based samples, respectively. The electronic behaviors of the cobaltites in dependence on temperature are explained considering local excitations from the diamagnetic low-spin (LS) Co3+ to close-lying paramagnetic high-spin (HS) Co3+ states and subsequent formation of a metallic phase of the IS Co3+ character through a charge transfer mechanism between LS/HS pairs. The magnetic polarons associated with doped carriers are interpreted as droplets of such intermediate (IS) phase.

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru; Oveshnikov, L. N.; Lunin, R. A.

The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect aremore » studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.« less

Origin of negative resistivity slope in U-based ferromagnets

NASA Astrophysics Data System (ADS)

Havela, L.; Paukov, M.; Buturlim, V.; Tkach, I.; Mašková, S.; Dopita, M.

2018-05-01

Ultra-nanocrystalline UH3-based ferromagnets with TC ≈ 200 K exhibit a flat temperature dependence of electrical resistivity with a negative slope both in the ferromagnetic and paramagnetic range. The ordered state with randomness on atomic scale, equivalent to a non-collinear ferromagnetism, can be affected by magnetic field, supressing the static magnetic disorder, which reduces the resistivity and removes the negative slope. It is deduced that the dynamic magnetic disorder in the paramagnetic state can be conceived as continuation of the static disorder in the ordered state. The experiments, performed for (UH3)0.78Mo0.12Ti0.10, demonstrate that the negative resistivity slope, observed for numerous U-based intermetallics in the paramagnetic state, can be due to the strong disorder effect on resistivity. The resulting weak localization, as a quantum interference effect which increases resistivity, is gradually suppressed by enhanced temperature, contributing by electron-phonon scattering, inelastic in nature and removing the quantum coherence.

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

NASA Astrophysics Data System (ADS)

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

2018-04-01

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three-dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb2 Pt2 Pb , a metal where itinerant electrons coexist with localized moments of Yb ions which can be described in terms of effective S =1 /2 spins with a dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the two interacting subsystems. We characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasilinear temperature dependence.

Superconducting phase transitions in mK temperature range in splat-cooled U0.85Pt0.15 alloys

NASA Astrophysics Data System (ADS)

Kim-Ngan, N.-T. H.; Tarnawski, Z.; Chrobak, M.; Sowa, S.; Duda, A.; Paukov, M.; Buturlim, V.; Havela, L.

2018-05-01

We present the temperature and magnetic-field dependence of the electrical resistivity (ρ(T,B)) in the mK temperature range used as a diagnostic tool for the superconductivity of U-Pt alloys prepared by splat-cooling technique. In most of the investigated alloys, a single resistivity drop was observed at the superconducting transition. For splat-cooled U0.85Pt0.15 (U-15 at% Pt) alloys, two drops were revealed around 0.6 K and 1 K tentatively attributed to the superconducting phase transitions of the γ-U phase and α-U phase. The ρ(T,B) characteristics were found to depend on the cooling rate. The superconductivity is characterized by very high upper critical fields, reaching 4.5 T in the 0 K limit.

Magnetization and transport properties of single RPd2P2 (R=Y, La-Nd, Sm-Ho, Yb)

NASA Astrophysics Data System (ADS)

Drachuck, Gil; Boehmer, Anna; Bud'Ko, Sergey L.; Canfield, Paul

Single crystals of RPd2P2 (R=Y, La-Nd, Sm-Ho, Yb) were grown using a self-flux method and were characterized by room-temperature powder X-ray diffraction, anisotropic temperature and field dependent magnetization and temperature dependent in-plane resistivity. Anisotropic magnetic properties, arising mostly from crystal electric field (CEF) effects, were observed for most magnetic rare earths. The experimentally estimated CEF parameters B02 were calculated from the anisotropic paramagnetic θab and θcvalues. Ordering temperatures, as well as the polycrystalline averaged paramagnetic Curie-Weiss temperature, θave, were extracted from magnetization and resistivity measurements. Work done at Ames Laboratory was supported by US Department of Energy, Basic Energy Sciences, Division of Materials Sciences and Engineering under Contract No. DE-AC02-07CH111358.

Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

PubMed Central

Gonnelli, R. S.; Paolucci, F.; Piatti, E.; Sharda, Kanudha; Sola, A.; Tortello, M.; Nair, Jijeesh R.; Gerbaldi, C.; Bruna, M.; Borini, S.

2015-01-01

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8·1014 cm−2 has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T2 component – that can be associated with electron-electron scattering – and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly, this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy. PMID:25906088

Influence of tissue resistivities on neuromagnetic fields and electric potentials studied with a finite element model of the head.

PubMed

Haueisen, J; Ramon, C; Eiselt, M; Brauer, H; Nowak, H

1997-08-01

Modeling in magnetoencephalography (MEG) and electroencephalography (EEG) requires knowledge of the in vivo tissue resistivities of the head. The aim of this paper is to examine the influence of tissue resistivity changes on the neuromagnetic field and the electric scalp potential. A high-resolution finite element method (FEM) model (452,162 elements, 2-mm resolution) of the human head with 13 different tissue types is employed for this purpose. Our main finding was that the magnetic fields are sensitive to changes in the tissue resistivity in the vicinity of the source. In comparison, the electric surface potentials are sensitive to changes in the tissue resistivity in the vicinity of the source and in the vicinity of the position of the electrodes. The magnitude (strength) of magnetic fields and electric surface potentials is strongly influenced by tissue resistivity changes, while the topography is not as strongly influenced. Therefore, an accurate modeling of magnetic field and electric potential strength requires accurate knowledge of tissue resistivities, while for source localization procedures this knowledge might not be a necessity.

The effect of the geometry and material properties of a carbon joint produced by electron beam induced deposition on the electrical resistance of a multiwalled carbon nanotube-to-metal contact interface

NASA Astrophysics Data System (ADS)

Rykaczewski, Konrad; Henry, Matthew R.; Kim, Song-Kil; Fedorov, Andrei G.; Kulkarni, Dhaval; Singamaneni, Srikanth; Tsukruk, Vladimir V.

2010-01-01

Multiwall carbon nanotubes (MWNTs) are promising candidates for yielding next generation electrical and electronic devices such as interconnects and tips for conductive force microscopy. One of the main challenges in MWNT implementation in such devices is the high contact resistance of the MWNT-metal electrode interface. Electron beam induced deposition (EBID) of an amorphous carbon interface has previously been demonstrated to simultaneously lower the electrical contact resistance and improve the mechanical characteristics of the MWNT-electrode connection. In this work, we investigate the influence of process parameters, such as the electron beam energy, current, geometry, and deposition time, on the EBID-made carbon joint geometry and electrical contact resistance. The influence of the composition of the deposited material on its resistivity is also investigated. The relative importance of each component of the contact resistance and the limiting factor of the overall electrical resistance of a MWNT-based interconnect is determined through a combination of a model analysis and comprehensive experiments.

Induction heating apparatus and methods for selectively energizing an inductor in response to a measured electrical characteristic that is at least partially a function of a temperature of a material being heated

DOEpatents

Richardson, John G.; Morrison, John L.; Hawkes, Grant L.

2006-07-04

An induction heating apparatus includes a measurement device for indicating an electrical resistance of a material to be heated. A controller is configured for energizing an inductor in response to the indicated resistance. An inductor may be energized with an alternating current, a characteristic of which may be selected in response to an indicated electrical resistance. Alternatively, a temperature of the material may be indicated via measuring the electrical resistance thereof and a characteristic of an alternating current for energizing the inductor may be selected in response to the temperature. Energizing the inductor may minimize the difference between a desired and indicated resistance or the difference between a desired and indicated temperature. A method of determining a temperature of at least one region of at least one material to be induction heated includes correlating a measured electrical resistance thereof to an average temperature thereof.

Risk analysis and detection of thrombosis by measurement of electrical resistivity of blood.

PubMed

Sapkota, Achyut; Asakura, Yuta; Maruyama, Osamu; Kosaka, Ryo; Yamane, Takashi; Takei, Masahiro

2013-01-01

Monitoring of thrombogenic process is very important in ventricular assistance devices (VADs) used as temporary or permanent measures in patients with advanced heart failure. Currently, there is a lack of a system which can perform a real-time monitoring of thrombogenic activity. Electrical signals vary according to the change in concentration of coagulation factors as well as the distribution of blood cells, and thus have potential to detect the thrombogenic process in an early stage. In the present work, we have made an assessment of an instrumentation system exploiting the electrical properties of blood. The experiments were conducted using bovine blood. Electrical resistance tomography with eight-electrode sensor was used to monitor the spatio-temporal change in electrical resistivity of blood in thrombogenic and non-thrombogenic condition. Under non-thrombogenic condition, the resistivity was uniform across the cross-section and average resistivity monotonically decreased with time before remaining almost flat. In contrary, under thrombogenic condition, there was non-uniform distribution across the cross-section, and average resistivity fluctuated with time.

Distribution of E/N and N/e/ in a cross-flow electric discharge laser. [electric field to neutral gas density and electron number density

NASA Technical Reports Server (NTRS)

Dunning, J. W., Jr.; Lancashire, R. B.; Manista, E. J.

1976-01-01

Measurements have been conducted of the effect of the convection of ions and electrons on the discharge characteristics in a large scale laser. The results are presented for one particular distribution of ballast resistance. Values of electric field, current density, input power density, ratio of electric field to neutral gas density (E/N), and electron number density were calculated on the basis of measurements of the discharge properties. In a number of graphs, the E/N ratio, current density, power density, and electron density are plotted as a function of row number (downstream position) with total discharge current and gas velocity as parameters. From the dependence of the current distribution on the total current, it appears that the electron production in the first two rows significantly affects the current flowing in the succeeding rows.

Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method

NASA Astrophysics Data System (ADS)

Lee, Byeong Hyeon; Han, Sangmin; Lee, Sang Yeol

2018-01-01

Amorphous silicon-zinc-tin-oxide (a-SZTO) thin film transistors (TFTs) have been fabricated depending on the silicon ratio in channel layers. The a-SZTO TFT exhibited high electrical properties, such as high mobility of 23 cm2 V-1 s-1, subthreshold swing of 0.74 V/decade and ION/OFF of 2.8 × 108, despite of the addition of Si suppressor. The physical mechanism on the change of the sheet resistance and the contact resistance in a-SZTO TFT has been investigated and proposed closely related with the Si ratio. Both resistances were increased as increasing Si ratio, which clearly indicated that the role of Si is a carrier suppressor directly leading to the increase of channel and contact resistances. To explain the role of Si as a carrier suppressor, the conduction band offset mechanism has been also proposed depending on the change of carrier concentration in channel layer and at the interface between electrode and channel layer. 2007.01-2011.12 Senior Researcher at korea institute of science and technology (KOREA). 2008.01-2011.12 Professor at University of Science and Technology (KOREA). 1995.01-2007.12 Professor at Yonsei University (KOREA). 2002.01-2003.12 Inviting Researcher at Los Alamos National Lab (USA). 1993.01-1995.12 Senior Researcher at Electronics and Telecommunications Research Institute (KOREA). 1992.01-1993.01 Research Associate at State University of New York at Buffalo (USA).

The effect of temperature and moisture on electrical resistance, strain sensitivity and crack sensitivity of steel fiber reinforced smart cement composite

NASA Astrophysics Data System (ADS)

Teomete, Egemen

2016-07-01

Earthquakes, material degradations and other environmental factors necessitate structural health monitoring (SHM). Metal foil strain gages used for SHM have low durability and low sensitivity. These factors motivated researchers to work on cement based strain sensors. In this study, the effects of temperature and moisture on electrical resistance, compressive and tensile strain gage factors (strain sensitivity) and crack sensitivity were determined for steel fiber reinforced cement based composite. A rapid increase of electrical resistance at 200 °C was observed due to damage occurring between cement paste, aggregates and steel fibers. The moisture—electrical resistance relationship was investigated. The specimens taken out of the cure were saturated with water and had a moisture content of 9.49%. The minimum electrical resistance was obtained at 9% moisture at which fiber-fiber and fiber-matrix contact was maximum and the water in micro voids was acting as an electrolyte, conducting electrons. The variation of compressive and tensile strain gage factors (strain sensitivities) and crack sensitivity were investigated by conducting compression, split tensile and notched bending tests with different moisture contents. The highest gage factor for the compression test was obtained at optimal moisture content, at which electrical resistance was minimum. The tensile strain gage factor for split tensile test and crack sensitivity increased by decreasing moisture content. The mechanisms between moisture content, electrical resistance, gage factors and crack sensitivity were elucidated. The relations of moisture content with electrical resistance, gage factors and crack sensitivities have been presented for the first time in this study for steel fiber reinforced cement based composites. The results are important for the development of self sensing cement based smart materials.

Coatings for graphite fibers

NASA Technical Reports Server (NTRS)

Galasso, F. S.; Scola, D. A.; Veltri, R. D.

1980-01-01

Graphite fibers released from composites during burning or an explosion caused shorting of electrical and electronic equipment. Silicon carbide, silica, silicon nitride and boron nitride were coated on graphite fibers to increase their electrical resistances. Resistances as high as three orders of magnitude higher than uncoated fiber were attained without any significant degradation of the substrate fiber. An organo-silicone approach to produce coated fibers with high electrical resistance was also used. Celion 6000 graphite fibers were coated with an organo-silicone compound, followed by hydrolysis and pyrolysis of the coating to a silica-like material. The shear and flexural strengths of composites made from high electrically resistant fibers were considerably lower than the shear and flexural strengths of composites made from the lower electrically resistant fibers. The lower shear strengths of the composites indicated that the coatings on these fibers were weaker than the coating on the fibers which were pyrolyzed at higher temperature.

Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

NASA Astrophysics Data System (ADS)

Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

2018-04-01

Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

Mechanical and electrical properties of low temperature phase MnBi

DOE PAGES

Jiang, Xiujuan; Roosendaal, Timothy; Lu, Xiaochuan; ...

2016-01-21

The low temperature phase (LTP) MnBi is a promising rare-earth-free permanent magnet material due to its high intrinsic coercivity and its large positive temperature coefficient. While scientists are making progress on fabricating bulk MnBi magnets, engineers have started to consider MnBi magnet for motor applications. In addition to the magnetic properties, there are other physical properties that could significantly affect a motor design. Here, we report the results of our investigation on the mechanical and electrical properties of bulk LTP MnBi and their dependence on temperature. We found at room temperature the sintered MnBi magnet fractures when the compression stressmore » exceeds 193 MPa; and its room temperature electric resistance is about 6.85 μΩ-m.« less

Low-frequency electrical properties.

USGS Publications Warehouse

Olhoeft, G.R.

1985-01-01

In the interpretation of induced polarization data, it is commonly assumed that metallic mineral polarization dominantly or solely causes the observed response. However, at low frequencies, there is a variety of active chemical processes which involve the movement or transfer of electrical charge. Measurements of electrical properties at low frequencies (such as induced polarization) observe such movement of charge and thus monitor many geochemical processes at a distance. Examples in which this has been done include oxidation-reduction of metallic minerals such as sulfides, cation exchange on clays, and a variety of clay-organic reactions relevant to problems in toxic waste disposal and petroleum exploration. By using both the frequency dependence and nonlinear character of the complex resistivity spectrum, these reactions may be distinguished from each other and from barren or reactionless materials.-Author

Spin accumulation in permalloy-ZnO heterostructures from both electrical injection and spin pumping

NASA Astrophysics Data System (ADS)

Wang, Xiaowei; Yang, Yumeng; Wang, Ying; Luo, Ziyan; Xie, Hang; Wu, Yihong

2017-11-01

We report the results of room temperature spin injection and detection studies in ZnO using both electrical injection and spin pumping. At ferromagnetic resonance, an interfacial voltage with a constant polarity upon magnetization reversal is observed in permalloy-ZnO heterostructures, which is attributed to spin accumulation after ruling out other origins. Simultaneous electrical injection during spin pumping is achieved in samples with large interface resistance or insertion of a thin MgO layer at the interface of permalloy and ZnO. From the pumping frequency dependence of detected voltage, a spin lifetime of 32 ps is extracted for ZnO at room temperature, despite the fact that there was no Hanle effect observed in the same device using the conventional three-terminal DC measurement.

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials

DOE PAGES

Zalden, Peter; Shu, Michael J.; Chen, Frank; ...

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4In 3Sb 67Te 26. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of thresholdmore » switching and reveals potential applications as an ultrafast electronic switch.« less

Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co{sub 50}Fe{sub 50} magnetic layer and In-Zn-O conductive oxide spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakatani, T. M., E-mail: Tomoya.Nakatani@hgst.com; Childress, J. R.

2015-06-28

We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co{sub 50}Fe{sub 50}/IZO/Co{sub 50}Fe{sub 50} trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm{sup 2}, significantly larger than all-metal structures with Ag or Cu spacers (∼40 mΩ μm{sup 2}). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5–6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm{sup 2}, were obtained. The values of ΔRA with the IZO spacers and Co{sub 50}Fe{sub 50} magnetic layers were significantly larger than thosemore » with conventional metal spacers and Co{sub 50}Fe{sub 50} magnetic layers (∼1–2 mΩ μm{sup 2}). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co{sub 50}Fe{sub 50}/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.« less

On the use of statistical methods to interpret electrical resistivity data from the Eumsung basin (Cretaceous), Korea

NASA Astrophysics Data System (ADS)

Kim, Ji-Soo; Han, Soo-Hyung; Ryang, Woo-Hun

2001-12-01

Electrical resistivity mapping was conducted to delineate boundaries and architecture of the Eumsung Basin Cretaceous. Basin boundaries are effectively clarified in electrical dipole-dipole resistivity sections as high-resistivity contrast bands. High resistivities most likely originate from the basement of Jurassic granite and Precambrian gneiss, contrasting with the lower resistivities from infilled sedimentary rocks. The electrical properties of basin-margin boundaries are compatible with the results of vertical electrical soundings and very-low-frequency electromagnetic surveys. A statistical analysis of the resistivity sections is tested in terms of standard deviation and is found to be an effective scheme for the subsurface reconstruction of basin architecture as well as the surface demarcation of basin-margin faults and brittle fracture zones, characterized by much higher standard deviation. Pseudo three-dimensional architecture of the basin is delineated by integrating the composite resistivity structure information from two cross-basin E-W magnetotelluric lines and dipole-dipole resistivity lines. Based on statistical analysis, the maximum depth of the basin varies from about 1 km in the northern part to 3 km or more in the middle part. This strong variation supports the view that the basin experienced pull-apart opening with rapid subsidence of the central blocks and asymmetric cross-basinal extension.

Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

NASA Astrophysics Data System (ADS)

Jiang, Jun; Zhang, X.-G.; Han, X. F.

2016-04-01

We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1-x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

Electric moisture meters for wood

Treesearch

William L. James

1988-01-01

Electric moisture meters for wood measure electric conductance (resistance) or dielectric properties, which vary fairly consistently with moisture content when it is less than 30 percent. The two major classes of electric moisture meters are the conductance (resistance) type and the dielectric type. Conductance-t ype meters use penetrating electrodes that measure in a...

van der Pauw's Theorem on Sheet Resistance

ERIC Educational Resources Information Center

Bolt, Michael

2017-01-01

The sheet resistance of a conducting material of uniform thickness is analogous to the resistivity of a solid material and provides a measure of electrical resistance. In 1958, L. J. van der Pauw found an effective method for computing sheet resistance that requires taking two electrical measurements from four points on the edge of a simply…

Microscopic histological characteristics of soft tissue sarcomas: analysis of tissue features and electrical resistance.

PubMed

Tosi, A L; Campana, L G; Dughiero, F; Forzan, M; Rastrelli, M; Sieni, E; Rossi, C R

2017-07-01

Tissue electrical conductivity is correlated with tissue characteristics. In this work, some soft tissue sarcomas (STS) excised from patients have been evaluated in terms of histological characteristics (cell size and density) and electrical resistance. The electrical resistance has been measured using the ex vivo study on soft tissue tumors electrical characteristics (ESTTE) protocol proposed by the authors in order to study electrical resistance of surgical samples excised by patients in a fixed measurement setup. The measurement setup includes a voltage pulse generator (700 V, 100 µs long at 5 kHz, period 200 µs) and an electrode with 7 needles, 20 mm-long, with the same distance arranged in a fixed hexagonal geometry. In the ESTTE protocol, the same voltage pulse sequence is applied to each different tumor mass and the corresponding resistance has been evaluated from voltage and current recorded by the equipment. For each tumor mass, a histological sample of the volume treated by means of voltage pulses has been taken for histological analysis. Each mass has been studied in order to identify the sarcoma type. For each histological sample, an image at 20× or 40× of magnification was acquired. In this work, the electrical resistance measured for each tumor has been correlated with tissue characteristics like the type, size and density of cells. This work presents a preliminary study to explore possible correlations between tissue characteristics and electrical resistance of STS. These results can be helpful to adjust the pulse voltage intensity in order to improve the electrochemotherapy efficacy on some histotype of STS.

Temperature and volumetric water content petrophysical relationships in municipal solid waste for the interpretation of bulk electrical resistivity data

NASA Astrophysics Data System (ADS)

Pilawski, Tamara; Dumont, Gaël; Nguyen, Frédéric

2015-04-01

Landfills pose major environmental issues including long-term methane emissions, and local pollution of soil and aquifers but can also be seen as potential energy resources and mining opportunities. Water content in landfills determine whether solid fractions can be separated and recycled, and controls the existence and efficiency of natural or enhanced biodegradation. Geophysical techniques, such as electrical and electromagnetic methods have proven successful in the detection and qualitative investigation of sanitary landfills. However, their interpretation in terms of quantitative water content estimates makes it more challenging due to the influence of parameters such as temperature, compaction, waste composition or pore fluid. To improve the confidence given to bulk electrical resistivity data and to their interpretation, we established temperature and volumetric water content petrophysical relationships that we tested on field and laboratory electrical resistivity measurements. We carried out two laboratory experiments on leachates and waste samples from a landfill located in Mont-Saint-Guibert, Belgium. We determined a first relationship between temperature and electrical resistivity with pure and diluted leachates by progressively increasing the temperature from 5°C to 65°C, and then cooling down to 5°C. The second relationship was obtained by measuring electrical resistivity on waste samples of different volumetric water contents. First, we used the correlations obtained from the experiments to compare electrical resistivity measurements performed in a landfill borehole and on reworked waste samples excavated at different depths. Electrical resistivities were measured every 20cm with an electromagnetic logging device (EM39) while a temperature profile was acquired with optic fibres. Waste samples were excavated every 2m in the same borehole. We filled experimental columns with these samples and measured electrical resistivities at laboratory temperature. We made corrections according to the temperature profile and to volumetric water contents obtained previously on undisturbed samples. Corrected values tended to be superimposed on those obtained in the field. Then, we calculated the water content of the different reworked waste samples using the correlation between volumetric water content correlation and electrical resistivity and we compared this value to the one measured at the laboratory. Both values were correlated satisfactorily. In conclusion, we show that bulk electrical resistivity measurements are very promising to quantify water content in landfills if temperature can be estimated independently. In future applications, electrical resistivity tomography coupled with distributed temperature sensing could give important estimates of water content of the waste and thus helping in dealing with problematics such as boosting biodegradation and stabilization of the waste, reducing risks of soil and aquifers pollution, landfill mining, and controlled production of methane.

Stretchable Conductive Elastomers for Soldier Biosensing Applications: Final Report

DTIC Science & Technology

2016-03-01

public release; distribution is unlimited. 7 the electrical impedance tunability that we required. Representative data for resistance versus volume...Technology Directorate’s (VTD) electric field mediated morphing wing research effort. Fig. 5 Resistance values of EEG electrodes as a function of...extend the resistance range of the developed polymer EEG electrodes to potentially provide insight into defining an optimum electrical performance for

Indications of vigor loss after fire in Caribbean pine (Pinus caribaea) from electrical resistance measurements

Treesearch

T.E. Paysen; A.L. Koonce; E. Taylor; M.O. Rodriquez

2006-01-01

In May 1993, electrical resistance measurements were performed on trees in burned and unburned stands of Caribbean pine (Pinus caribaea Mor.) in north-eastern Nicaragua to determine whether tree vigor was affected by fire. An Osmose model OZ-67 Shigometer with digital readout was used to collect the sample electrical resistance data. Computer-...

Direct-current vertical electrical-resistivity soundings in the Lower Peninsula of Michigan

USGS Publications Warehouse

Westjohn, D.B.; Carter, P.J.

1989-01-01

Ninety-three direct-current vertical electrical-resistivity soundings were conducted in the Lower Peninsula of Michigan from June through October 1987. These soundings were made to assist in mapping the depth to brine in areas where borehole resistivity logs and water-quality data are sparse or lacking. The Schlumberger array for placement of current and potential electrodes was used for each sounding. Vertical electrical-resistivity sounding field data, shifted and smoothed sounding data, and electric layers calculated using inverse modeling techniques are presented. Also included is a summary of the near-surface conditions and depths to conductors and resistors for each sounding location.

Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok

2014-03-07

The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells aremore » formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.« less

Correlation between magnetocaloric and electrical properties based on phenomenological models in La0.47Pr0.2Pb0.33MnO3 perovskite

NASA Astrophysics Data System (ADS)

Mechi, Nesrine; Alzahrani, Bandar; Hcini, Sobhi; Bouazizi, Mohamed Lamjed; Dhahri, Abdessalem

2018-06-01

We have investigated the correlation between magnetocaloric and electrical properties of La0.47Pr0.2Pb0.33MnO3 perovskite prepared using the sol-gel method. Rietveld analysis of X-ray diffraction (XRD) pattern shows pure crystalline phase with rhombohedral ? structure. Magnetic entropy change, relative cooling power (RCP) and specific heat were predicted from M(T, μ0H) data at different magnetic fields with the help of the phenomenological model. The magnetic entropy change reaches a maximum value ? of about 3.96 J kg-1 K-1 for μ0H = 5 T corresponding to RCP of 183 J kg-1. These values are relatively higher, making our sample a promising candidate for the magnetic refrigeration. Electrical-resistivity measurements were well fitted with the phenomenological percolation model, which is based on the phase segregation of ferromagnetic-metallic clusters and paramagnetic-semiconductor regions. The temperature and magnetic field dependences of resistivity data, ρ(T, μ0H), allowed us to determine the magnetic entropy change ?. Results show that the as-obtained magnetic entropy change values are similar to those determined from the phenomenological model.

Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

PubMed Central

Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

2016-01-01

Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS2

PubMed Central

Vaskivskyi, Igor; Gospodaric, Jan; Brazovskii, Serguei; Svetin, Damjan; Sutar, Petra; Goreshnik, Evgeny; Mihailovic, Ian A.; Mertelj, Tomaz; Mihailovic, Dragan

2015-01-01

Controllable switching between metastable macroscopic quantum states under nonequilibrium conditions induced either by light or with an external electric field is rapidly becoming of great fundamental interest. We investigate the relaxation properties of a “hidden” (H) charge density wave (CDW) state in thin single crystals of the layered dichalcogenide 1T-TaS2, which can be reached by either a single 35-fs optical laser pulse or an ~30-ps electrical pulse. From measurements of the temperature dependence of the resistivity under different excitation conditions, we find that the metallic H state relaxes to the insulating Mott ground state through a sequence of intermediate metastable states via discrete jumps over a “Devil’s staircase.” In between the discrete steps, an underlying glassy relaxation process is observed, which arises because of reciprocal-space commensurability frustration between the CDW and the underlying lattice. We show that the metastable state relaxation rate may be externally stabilized by substrate strain, thus opening the way to the design of nonvolatile ultrafast high-temperature memory devices based on switching between CDW states with large intrinsic differences in electrical resistance. PMID:26601218

Effects of various gate materials on electrical degradation of a-Si:H TFT in industrial display application

NASA Astrophysics Data System (ADS)

Ho, Ching-Yuan; Chang, Yaw-Jen

2016-02-01

Both aluminum (Al) and copper (Cu), acting as transmission lines in the hydrogenated amorphous silicon of a thin film transistor (a-Si:H TFT), were studied to investigate electrical degradation including electron-migration (EM) and threshold voltage (Vt) stability and recovery performance. Under long-term current stress, the Cu material exhibited excellent resistance to EM properties, but a passivated SiNx crack was observed due to fast heat conductivity. By applying electrical stress on the gate and drain for 5 × 104 s, the power-law time dependency of the threshold voltage shift (ΔVt) indicated that the defective state creation dominated the TFT device's instability. The presence of drain stress increased the overall ΔVt because the high longitudinal field induced impact ionization and then, enhanced hot-carrier-induced electron trapping within the gate SiNx dielectric. An annealing effect prompted a stressed a-Si:H TFT back to virgin status. This study proposes better ΔVt stability and excellent resistance against electron-migration in a Cu gate device which can be considered as a candidate for a transmission line on prolonged TFT applications.

Accelerated degradation of silicon metallization systems

NASA Technical Reports Server (NTRS)

Lathrop, J. W.

1983-01-01

Clemson University has been engaged for the past five years in a program to determine the reliability attributes of solar cells by means of accelerated test procedures. The cells are electrically measured and visually inspected and then subjected for a period of time to stress in excess of that normally encountered in use, and then they are reinspected. Changes are noted and the process repeated. This testing has thus far involved 23 different unencapsulated cell types from 12 different manufacturers, and 10 different encapsulated cell types from 9 different manufacturers. Reliability attributes of metallization systems can be classified as major or minor, depending on the severity of the effects observed. As a result of the accelerated testing conducted under the Clemson program, major effects have been observed related to contact resistance and to mechanical adherence and solderability. This paper does not attempt a generalized survey of accelerated test results, but rather concentrates on one particular attribute of metallization that has been observed to cause electrical degradation - increased contact resistance due to Schottky barrier formation. In this example basic semiconductor theory was able to provide an understanding of the electrical effects observed during accelerated stress testing.

Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS2.

PubMed

Vaskivskyi, Igor; Gospodaric, Jan; Brazovskii, Serguei; Svetin, Damjan; Sutar, Petra; Goreshnik, Evgeny; Mihailovic, Ian A; Mertelj, Tomaz; Mihailovic, Dragan

2015-07-01

Controllable switching between metastable macroscopic quantum states under nonequilibrium conditions induced either by light or with an external electric field is rapidly becoming of great fundamental interest. We investigate the relaxation properties of a "hidden" (H) charge density wave (CDW) state in thin single crystals of the layered dichalcogenide 1T-TaS2, which can be reached by either a single 35-fs optical laser pulse or an ~30-ps electrical pulse. From measurements of the temperature dependence of the resistivity under different excitation conditions, we find that the metallic H state relaxes to the insulating Mott ground state through a sequence of intermediate metastable states via discrete jumps over a "Devil's staircase." In between the discrete steps, an underlying glassy relaxation process is observed, which arises because of reciprocal-space commensurability frustration between the CDW and the underlying lattice. We show that the metastable state relaxation rate may be externally stabilized by substrate strain, thus opening the way to the design of nonvolatile ultrafast high-temperature memory devices based on switching between CDW states with large intrinsic differences in electrical resistance.

Electrical and mechanical properties of ZrO{sub 2} (2 mol% Y{sub 2}O{sub 3})/MoSi{sub 2} composites and their laminated materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muraoka, Yoshiyuki; Yoshikawa, Fumihito; Hirota, Ken

1996-04-01

Well-densified composites with the compositions ZrO{sub 2} (2Y)/MoSi{sub 2} = 60/40 and 80/20 mol% have been fabricated by hot isostatic pressing for 2 h at 1,400 C and 196 MPa. Electric resistivities ({rho}) of the two composites are very different; the former and latter composites correspond to metallic and insulating materials, respectively. The properties are strongly dependent on the textures. Laminated materials with the compositions ZrO{sub 2} (2Y)/MoSi{sub 2} = (60/40)/(80/20)/(60/40) mol% have been prepared by the same technique. Overall electric resistivities in directions perpendicular and parallel to the interfaces have been determined to be {rho}{sub {perpendicular}} {approx} 1 {times}more » 10{sup 11} {Omega} {center_dot} cm and {rho}{sub {parallel}} {approx} 1 {times} 10{sup {minus}4} {Omega} {center_dot} cm, respectively. Residual stress as much as {approx} 150 MPa is induced in the interfaces. The fracture toughness (K{sub Ic}) is greatly affected by the residual stress.« less

A method to improve tree water use estimates by distinguishing sapwood from heartwood using Electrical Resistivity Tomography

NASA Astrophysics Data System (ADS)

Guyot, A.; Ostergaard, K.; Lenkopane, M.; Fan, J.; Lockington, D. A.

2011-12-01

Estimating whole-plant water use in trees requires reliable and accurate methods. Measuring sap velocity and extrapolating to tree water use is seen as the most commonly used. However, deducing the tree water use from sap velocity requires an estimate of the sapwood area. This estimate is the highest cause of uncertainty, and can reach more than 50 % of the uncertainty in the estimate of water use per day. Here, we investigate the possibility of using Electrical Resistivity Tomography to evaluate the sapwood area distribution in a plantation of Pinus elliottii. Electric resistivity tomographs of Pinus elliottii show a very typical pattern of electrical resistivity, which is highly correlated to sapwood and heartwood distribution. To identify the key factors controlling the variation of electrical resistivity, cross sections at breast height for ten trees have been monitored with electrical resistivity tomography. Trees have been cut down after the experiment to identify the heartwood/sapwood boundaries and to extract wood and sap samples. pH, electrolyte concentration and wood moisture content have then been analysed for these samples. Results show that the heartwood/sapwood patterns are highly correlated with electrical resistivity, and that the wood moisture content is the most influencing factor controlling the variability of the patterns. These results show that electric resistivity tomography could be used as a powerful tool to identify the sapwood area, and thus be used in combination with sapflow sensors to map tree water use at stand scale. However, if Pinus elliottii shows typical patterns, further work is needed to identify to see if there are species - specific characterictics as shown in previous works (, electrolyte gradients from the bark to the heartwood). Also, patterns of high resistivity in between needles positions, which are not correlated with either wood moisture content or sapwood, appear to be artifacts. Thus, inversion methods have also to be improved to take into account these measurements issues.

A geophysical system combining electrical resistivity and spontaneous potential for detecting, delineating, and monitoring slope stability.

DOT National Transportation Integrated Search

1991-01-01

Various geophysical electrical measuring techniques, i.e., spontaneous potential (SP) terrain conductivity meter (TCM), and conventional electrical resistivity/conductivity (ER), were tested to determine their effectiveness in detecting, delineating,...

Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa2Cu3O7-δ single crystals

NASA Astrophysics Data System (ADS)

Khadzhai, G. Ya.; Vovk, R. V.; Vovk, N. R.; Kamchatnaya, S. N.; Dobrovolskiy, O. V.

2018-02-01

We reveal that the temperature dependence of the basal-plane normal-state electrical resistance of optimally doped YBa2Cu3O7-δ single crystals can be with great accuracy approximated within the framework of the model of s-d electron-phonon scattering. This requires taking into account the fluctuation conductivity whose contribution exponentially increases with decreasing temperature and decreases with an increase of oxygen deficiency. Room-temperature annealing improves the sample and, thus, increases the superconducting transition temperature. The temperature of the 2D-3D crossover decreases during annealing.

Parametric study of the physical properties of hydrate-bearing sand, silt, and clay sediments: 1. Electromagnetic properties

USGS Publications Warehouse

Lee, J.Y.; Santamarina, J.C.; Ruppel, C.

2010-01-01

The marked decrease in bulk electrical conductivity of sediments in the presence of gas hydrates has been used to interpret borehole electrical resistivity logs and, to a lesser extent, the results of controlled source electromagnetic surveys to constrain the spatial distribution and predicted concentration of gas hydrate in natural settings. Until now, an exhaustive laboratory data set that could be used to assess the impact of gas hydrate on the electromagnetic properties of different soils (sand, silt, and clay) at different effective stress and with different saturations of hydrate has been lacking. The laboratory results reported here are obtained using a standard geotechnical cell and the hydrate-formed tetrahydrofuran (THF), a liquid that is fully miscible in water and able to produce closely controlled saturations of hydrate from dissolved phase. Both permittivity and electrical conductivity are good indicators of the volume fraction of free water in the sediment, which is in turn dependent on hydrate saturation. Permittivity in the microwave frequency range is particularly predictive of free water content since it is barely affected by ionic concentration, pore structure, and surface conduction. Electrical conductivity (or resistivity) is less reliable for constraining water content or hydrate saturation: In addition to fluid-filled porosity, other factors, such as the ionic concentration of the pore fluid and possibly other conduction effects (e.g., surface conduction in high specific surface soils having low conductivity pore fluid), also influence electrical conductivity.

The Extracellular Electrical Resistivity in Cell Adhesion

PubMed Central

Gleixner, Raimund; Fromherz, Peter

2006-01-01

The interaction of cells in a tissue depends on the nature of the extracellular matrix. The electrical properties of the narrow extracellular space are unknown. Here we consider cell adhesion mediated by extracellular matrix protein on a solid substrate as a model system. We culture human embryonic kidney (HEK293) cells on silica coated with fibronectin and determine the electrical resistivity in the cell-solid junction \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}{\\rho}_{{\\mathrm{J}}}=r_{{\\mathrm{J}}}d_{{\\mathrm{J}}}\\end{equation*}\\end{document} by combining measurements of the sheet resistance \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}r_{{\\mathrm{J}}}\\end{equation*}\\end{document} and of the distance \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}d_{{\\mathrm{J}}}\\end{equation*}\\end{document} between membrane and substrate. The sheet resistance is obtained from phase fluorometry of the voltage-sensitive dye ANNINE-5 by alternating-current stimulation from the substrate. The distance is measured by fluorescence interference contrast microscopy. We change the resistivity of the bath in a range from \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}66\\hspace{.167em}{\\Omega}\\hspace{.167em}{\\mathrm{cm}}\\end{equation*}\\end{document} to \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}750\\hspace{.167em}{\\Omega}\\hspace{.167em}{\\mathrm{cm}}\\end{equation*}\\end{document} and find that the sheet resistance \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}r_{{\\mathrm{J}}}\\end{equation*}\\end{document} is proportionally enhanced, but that the distance is invariant around \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}d_{{\\mathrm{J}}}=75\\hspace{.167em}{\\mathrm{nm}}\\end{equation*}\\end{document}. In all cases, the resulting resistivity \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}{\\rho}_{{\\mathrm{J}}}\\end{equation*}\\end{document} is indistinguishable from the resistivity of the bath. A similar result is obtained for rat neurons cultured on polylysine. On that basis, we propose a “bulk resistivity in cell adhesion” model for cell-solid junctions. The observations suggest that the electrical interaction between cells in a tissue is determined by an extracellular space with the electrical properties of bulk electrolyte. PMID:16399830

Highly sensitive piezo-resistive graphite nanoplatelet-carbon nanotube hybrids/polydimethylsilicone composites with improved conductive network construction.

PubMed

Zhao, Hang; Bai, Jinbo

2015-05-13

The constructions of internal conductive network are dependent on microstructures of conductive fillers, determining various electrical performances of composites. Here, we present the advanced graphite nanoplatelet-carbon nanotube hybrids/polydimethylsilicone (GCHs/PDMS) composites with high piezo-resistive performance. GCH particles were synthesized by the catalyst chemical vapor deposition approach. The synthesized GCHs can be well dispersed in the matrix through the mechanical blending process. Due to the exfoliated GNP and aligned CNTs coupling structure, the flexible composite shows an ultralow percolation threshold (0.64 vol %) and high piezo-resistive sensitivity (gauge factor ∼ 10(3) and pressure sensitivity ∼ 0.6 kPa(-1)). Slight motions of finger can be detected and distinguished accurately using the composite film as a typical wearable sensor. These results indicate that designing the internal conductive network could be a reasonable strategy to improve the piezo-resistive performance of composites.

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamioka, K.; Oga, T.; Izawa, Y.

2013-12-04

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ∼10{sup 3} Ωcm for un-implanted samples to ∼10{sup −2} Ωcm for as-implanted ones are observed. The resistivity is further decreased to ∼10{sup −3} Ωcm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33more » eV) related to the Ge donor is observed in 1000 °C annealed samples.« less

Magnetic field dissipation in D-sheets

NASA Technical Reports Server (NTRS)

Burlaga, L. F.; Scudder, J. D.

1973-01-01

The effects of magnetic field annihilation at a tangential or rotational discontinuity in a resistive plasma are examined. The magnetic field intensity profile depends on (1) the field intensities far from the current sheet (+ and - infinity), (2) the angle between the two intensities, and (3) the electrical resistivity. For a tangential discontinuity, the theory predicts a depression in B, centered at the discontinuity, and it predicts a monotonic transition. The theory provides satisfactory fits to the magnetic field intensity and proton temperature profiles observed for two extremely broad D-sheets in the solar wind. Assuming a diffusion time 10 days, one obtains effective resistivities or approximately = 3 x 10 to the 12th power and 2 x 10 to the 13th power emu for the D-sheets. Either resistivity at directional discontinuities is much lower than 10 to the 12th power emu or annihilation does not always occur at discontinuities.

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1975-01-01

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Controlling the anomalous Hall effect by electric-field-induced piezo-strain in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Yang, Yuanjun; Yao, Yingxue; Chen, Lei; Huang, Haoliang; Zhang, Benjian; Lin, Hui; Luo, Zhenlin; Gao, Chen; Lu, Y. L.; Li, Xiaoguang; Xiao, Gang; Feng, Ce; Zhao, Y. G.

2018-01-01

Electric-field control of the anomalous Hall effect (AHE) was investigated in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 (FePt/PMN-PT) multiferroic heterostructures at room temperature. It was observed that a very large Hall resistivity change of up to 23.9% was produced using electric fields under a magnetic field bias of 100 Oe. A pulsed electric field sequence was used to generate nonvolatile strain to manipulate the Hall resistivity. Two corresponding nonvolatile states with distinct Hall resistivities were achieved after the electric fields were removed, thus enabling the encoding of binary information for memory applications. These results demonstrate that the Hall resistivity can be reversibly switched in a nonvolatile manner using programmable electric fields. Two remanent magnetic states that were created by electric-field-induced piezo-strain from the PMN-PT were attributed to the nonvolatile and reversible properties of the AHE. This work suggests that a low-energy-consumption-based approach can be used to create nonvolatile resistance states for spintronic devices based on electric-field control of the AHE.

Oxidation, carburization and/or sulfidation resistant iron aluminide alloy

DOEpatents

Sikka, Vinod K.; Deevi, Seetharama C.; Fleischhauer, Grier S.; Hajaligol, Mohammad R.; Lilly, Jr., A. Clifton

2003-08-19

The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, .ltoreq.1% Cr and either .gtoreq.0.05% Zr or Zro.sub.2 stringers extending perpendicular to an exposed surface of the heating element or .gtoreq.0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Zr, .ltoreq.1% C, .ltoreq.0.1% B. .ltoreq.30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, .ltoreq.1% oxygen, .ltoreq.3% Cu, balance Fe.

Control of Nanofilament Structure and Observations of Quantum Point Contact Behavior in Ni/NiO Nanowire Junctions

NASA Astrophysics Data System (ADS)

Oliver, Sean; Fairfield, Jessamyn; Lee, Sunghun; Bellew, Allen; Stone, Iris; Ruppalt, Laura; Boland, John; Vora, Patrick

Resistive switching is ideal for use in non-volatile memory where information is stored in a metallic or insulating state. Nanowire junctions formed at the intersection of two Ni/NiO core/shell nanowires have emerged as a leading candidate structure where resistive switching occurs due to the formation and destruction of conducting filaments. However, significant knowledge gaps remain regarding the conduction mechanisms as measurements are typically only performed at room temperature. Here, we combine temperature-dependent current-voltage (IV) measurements from 15 - 300 K with magnetoresistance studies and achieve new insight into the nature of the conducting filaments. We identify a novel semiconducting state that behaves as a quantum point contact and find evidence for a possible electric-field driven phase transition. The insulating state exhibits unexpectedly complex IV characteristics that highlight the disordered nature of the ruptured filament while we find clear signs of anisotropic magnetoresistance in the metallic state. Our results expose previously unobserved behaviors in nanowire resistive switching devices and pave the way for future applications where both electrical and magnetic switching can be achieved in a single device. This work was supported by ONR Grant N-00014-15-1-2357.

Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb / Si ( 1 1 1 ) ₋ ( 7 × 7 )

DOE PAGES

Jałochowski, M.; Zdyb, R.; Tringides, M. C.

2016-02-23

The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivitymore » dependence on θ.« less

Phase transition in a multiferroic Ni-Mn-Ga single crystal

NASA Astrophysics Data System (ADS)

Veřtát, P.; Drahokoupil, J.; Perevertov, O.; Heczko, O.

2016-08-01

We studied martensitic phase transformation, crystal structure and twinned microstructure of resulting martensite of a Ni-Mn-Ga single crystal as essential conditions for magnetic shape memory effect. Thermal dependence of electric resistivity, magnetic susceptibility and dilatation measurements were measured to characterise kinetics of the transformation. With the help of XRD analysis and optical microscopy we evaluated the hierarchical twinning microstructure in the 10M martensite.

Temperature Dependence of the Seebeck Coefficient in Zinc Oxide Thin Films

NASA Astrophysics Data System (ADS)

Noori, Amirreza; Masoumi, Saeed; Hashemi, Najmeh

2017-12-01

Thermoelectric devices are reliable tools for converting waste heat into electricity as they last long, produce no noise or vibration, have no moving elements, and their light weight makes them suitable for the outer space usage. Materials with high thermoelectric figure of merit (zT) have the most important role in the fabrication of efficient thermoelectric devices. Metal oxide semiconductors, specially zinc oxide has recently received attention as a material suitable for sensor, optoelectronic and thermoelectric device applications because of their wide direct bandgap, chemical stability, high-energy radiation endurance, transparency and acceptable zT. Understanding the thermoelectric properties of the undoped ZnO thin films can help design better ZnO-based devices. Here, we report the results of our experimental work on the thermoelectric properties of the undoped polycrystalline ZnO thin films. These films are deposited on alumina substrates by thermal evaporation of zinc in vacuum followed by a controlled oxidation process in air carried out at the 350-500 °C temperature range. The experimental setup including gradient heaters, thermometry system and Seebeck voltage measurement equipment for high resistance samples is described. Seebeck voltage and electrical resistivity of the samples are measured at different conditions. The observed temperature dependence of the Seebeck coefficient is discussed.

On the use of doped polyethylene as an insulating material for HVDC cables

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khalil, M.S.

1996-12-31

The merits of HVDC cables with polymeric insulation are well recognized. However, the development of such cables is still hampered due to the problems resulting from the complicated dependence of the electrical conductivity of the polymer on the temperature and the dc electric field and the effects of space charge accumulation in this material. Different methods have been suggested to solve these problems yet none of these methods seem to give a conclusive solution. The present report provides, firstly a critical review of the previous works reported in the literature concerning the development of HVDC cables with polymeric insulation. Differentmore » aspects of those works are examined and discussed. Secondly, an account is given on an investigation using low density polyethylene (LDPE) doped with an inorganic additive as a candidate insulating material for HVDC cables. Preliminary results from measurements of dc breakdown strength and insulation resistivity of both the undoped and the doped materials are presented. It is shown that the incorporation of an inorganic additive into LDPE has improved the performance of the doped material under polarity reversal dc conditions at room temperature. Moreover, the dependency of the insulation resistivity on temperature for the doped material appears to be beneficially modified.« less

Negative differential electrolyte resistance in a solid-state nanopore resulting from electroosmotic flow bistability.

PubMed

Luo, Long; Holden, Deric A; White, Henry S

2014-03-25

A solid-state nanopore separating two aqueous solutions containing different concentrations of KCl is demonstrated to exhibit negative differential resistance (NDR) when a constant pressure is applied across the nanopore. NDR refers to a decrease in electrical current when the voltage applied across the nanopore is increased. NDR results from the interdependence of solution flow (electroosmotic and pressure-engendered) with the distributions of K+ and Cl- within the nanopore. A switch from a high-conductivity state to a low-conductivity state occurs over a very narrow voltage window (<2 mV) that depends on the nanopore geometry, electrolyte concentration, and nanopore surface charge density. Finite element simulations based on a simultaneous solution of the Navier-Stokes, Poisson, and Nernst-Planck equations demonstrate that NDR results from a positive feedback mechanism between the ion distributions and electroosmotic flow, yielding a true bistability in fluid flow and electrical current at a critical applied voltage, i.e., the NDR "switching potential". Solution pH and Ca2+ were separately employed as chemical stimuli to investigate the dependence of the NDR on the surface charge density. The NDR switching potential is remarkably sensitive to the surface charge density, and thus to pH and the presence of Ca2+, suggesting possible applications in chemical sensing.

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

Optimization and performance comparison for galloping-based piezoelectric energy harvesters with alternating-current and direct-current interface circuits

NASA Astrophysics Data System (ADS)

Tan, Ting; Yan, Zhimiao; Lei, Hong

2017-07-01

Galloping-based piezoelectric energy harvesters scavenge small-scale wind energy and convert it into electrical energy. For piezoelectric energy harvesting with the same vibrational source (galloping) but different (alternating-current (AC) and direct-current (DC)) interfaces, general analytical solutions of the electromechanical coupled distributed parameter model are proposed. Galloping is theoretically proven to appear when the linear aerodynamic negative damping overcomes the electrical damping and mechanical damping. The harvested power is demonstrated as being done by the electrical damping force. Via tuning the load resistance to its optimal value for optimal or maximal electrical damping, the harvested power of the given structure with the AC/DC interface is maximized. The optimal load resistances and the corresponding performances of such two systems are compared. The optimal electrical damping are the same but with different optimal load resistances for the systems with the AC and DC interfaces. At small wind speeds where the optimal electrical damping can be realized by only tuning the load resistance, the performances of such two energy harvesting systems, including the minimal onset speeds to galloping, maximal harvested powers and corresponding tip displacements are almost the same. Smaller maximal electrical damping with larger optimal load resistance is found for the harvester with the DC interface when compared to those for the harvester with the AC interface. At large wind speeds when the maximal electrical damping rather than the optimal electrical damping can be reached by tuning the load resistance alone, the harvester with the AC interface circuit is recommended for a higher maximal harvested power with a smaller tip displacement. This study provides a method using the general electrical damping to connect and compare the performances of piezoelectric energy harvesters with same excitation source but different interfaces.

Electric moisture meters for wood

Treesearch

William L. James

1963-01-01

Common methods of measuring the moisture content of wood are described briefly, and a short historical account of the development of electric moisture meters is given. Electrical properties of wood are discussed briefly, and the basic operation of the resistance type and the radio- frequency types of moisture meter is outlined. Data relating the electrical resistance...

Effect of CFRC layers on the electrical properties and failure mode of RC beams strengthened with CFRC composites

NASA Astrophysics Data System (ADS)

Wu, Sigang; Dai, Hongzhe; Wang, Wei

2007-12-01

This paper designs an innovative reinforced concrete (RC) beam strengthened with carbon fiber reinforced concrete (CFRC) composites. Six groups of test beams, five with different degrees of strengthening, achieved by changing the location and the thickness of the CFRC layer, and one virgin RC beam, were tested in four-point bending over a span of 3000 mm. We investigate the effect of the CFRC layer on the flexural performance and the electrical properties of the designed beams. The test results indicate that the CFRC strengthened RC beam exhibits improved electrical properties as well as better mechanical performance. Also, the location and the thickness of the CFRC layer affect the initial electrical resistance and other electrical properties of the beam. Relationships between electrical resistance, loading, deflection and cracks show that the increase in the electrical resistance can be used to monitor the extent of damage to the designed beam. Based on this discovery, a new health monitoring technique for RC structures is produced by means of electrical resistance measurements.

Semiconductor bridge (SCB) igniter

DOEpatents

Bickes, Jr., Robert W.; Schwarz, Alfred C.

1987-01-01

In an explosive device comprising an explosive material which can be made to explode upon activation by activation means in contact therewith; electrical activation means adaptable for activating said explosive material such that it explodes; and electrical circuitry in operation association with said activation means; there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry, and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which defines its area of contact with said explosive material.

Magnetic properties of nearly stoichiometric CeAuBi2 heavy fermion compound

NASA Astrophysics Data System (ADS)

Adriano, C.; Rosa, P. F. S.; Jesus, C. B. R.; Grant, T.; Fisk, Z.; Garcia, D. J.; Pagliuso, P. G.

2015-05-01

Motivated by the interesting magnetic anisotropy found in the heavy fermion family CeTX2 (T = transition metal and X = pnictogen), here, we study the novel parent compound CeAu1-xBi2-y by combining magnetization, pressure dependent electrical resistivity, and heat-capacity measurements. The magnetic properties of our nearly stoichiometric single crystal sample of CeAu1-xBi2-y (x = 0.92 and y = 1.6) revealed an antiferromagnetic ordering at TN = 12 K with an easy axis along the c-direction. The field dependent magnetization data at low temperatures reveal the existence of a spin-flop transition when the field is applied along the c-axis (Hc ˜ 7.5 T and T = 5 K). The heat capacity and pressure dependent resistivity data suggest that CeAu0.92Bi1.6 exhibits a weak heavy fermion behavior with strongly localized Ce3+ 4f electrons. Furthermore, the systematic analysis using a mean field model including anisotropic nearest-neighbors interactions and the tetragonal crystalline electric field (CEF) Hamiltonian allows us to extract a CEF scheme and two different values for the anisotropic J RKKY exchange parameters between the Ce3+ ions in this compound. Thus, we discuss a scenario, considering both the anisotropic magnetic interactions and the tetragonal CEF effects, in the CeAu1-xBi2-y compounds, and we compare our results with the isostructural compound CeCuBi2.

A numerical study on piezoelectric energy harvesting by combining transverse galloping and parametric instability phenomena

NASA Astrophysics Data System (ADS)

Franzini, Guilherme Rosa; Santos, Rebeca Caramêz Saraiva; Pesce, Celso Pupo

2017-12-01

This paper aims to numerically investigate the effects of parametric instability on piezoelectric energy harvesting from the transverse galloping of a square prism. A two degrees-of-freedom reduced-order model for this problem is proposed and numerically integrated. A usual quasi-steady galloping model is applied, where the transverse force coefficient is adopted as a cubic polynomial function with respect to the angle of attack. Time-histories of nondimensional prism displacement, electric voltage and power dissipated at both the dashpot and the electrical resistance are obtained as functions of the reduced velocity. Both, oscillation amplitude and electric voltage, increased with the reduced velocity for all parametric excitation conditions tested. For low values of reduced velocity, 2:1 parametric excitation enhances the electric voltage. On the other hand, for higher reduced velocities, a 1:1 parametric excitation (i.e., the same as the natural frequency) enhances both oscillation amplitude and electric voltage. It has been also found that, depending on the parametric excitation frequency, the harvested electrical power can be amplified in 70% when compared to the case under no parametric excitation.

Diversification of intrinsic motoneuron electrical properties during normal development and botulinum toxin-induced muscle paralysis in early postnatal mice.

PubMed

Nakanishi, S T; Whelan, P J

2010-05-01

During early postnatal development, between birth and postnatal days 8-11, mice start to achieve weight-bearing locomotion. In association with the progression of weight-bearing locomotion there are presumed developmental changes in the intrinsic electrical properties of spinal -motoneurons. However, these developmental changes in the properties of -motoneuron properties have not been systematically explored in mice. Here, data are presented documenting the developmental changes of selected intrinsic motoneuron electrical properties, including statistically significant changes in action potential half-width, intrinsic excitability and diversity (quantified as coefficient of variation) of rheobase current, afterhyperpolarization half-decay time, and input resistance. In various adult mammalian preparations, the maintenance of intrinsic motoneuron electrical properties is dependent on activity and/or transmission-sensitive motoneuron-muscle interactions. In this study, we show that botulinum toxin-induced muscle paralysis led to statistically significant changes in the normal development of intrinsic motoneuron electrical properties in the postnatal mouse. This suggests that muscle activity during early neonatal life contributes to the development of normal motoneuron electrical properties.

Resistive field structures for semiconductor devices and uses therof

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marinella, Matthew; DasGupta, Sandeepan; Kaplar, Robert

The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additionalmore » methods and architectures are described herein.« less

Using electrical resistance tomography to map subsurface temperatures

DOEpatents

Ramirez, A.L.; Chesnut, D.A.; Daily, W.D.

1994-09-13

A method is provided for measuring subsurface soil or rock temperatures remotely using electrical resistivity tomography (ERT). Electrical resistivity measurements are made using electrodes implanted in boreholes driven into the soil and/or at the ground surface. The measurements are repeated as some process changes the temperatures of the soil mass/rock mass. Tomographs of electrical resistivity are calculated based on the measurements using Poisson's equation. Changes in the soil/rock resistivity can be related to changes in soil/rock temperatures when: (1) the electrical conductivity of the fluid trapped in the soil's pore space is low, (2) the soil/rock has a high cation exchange capacity and (3) the temperature changes are sufficiently high. When these three conditions exist the resistivity changes observed in the ERT tomographs can be directly attributed to changes in soil/rock temperatures. This method provides a way of mapping temperature changes in subsurface soils remotely. Distances over which the ERT method can be used to monitor changes in soil temperature range from tens to hundreds of meters from the electrode locations. 1 fig.

Using electrical resistance tomography to map subsurface temperatures

DOEpatents

Ramirez, Abelardo L.; Chesnut, Dwayne A.; Daily, William D.

1994-01-01

A method is provided for measuring subsurface soil or rock temperatures remotely using electrical resistivity tomography (ERT). Electrical resistivity measurements are made using electrodes implanted in boreholes driven into the soil and/or at the ground surface. The measurements are repeated as some process changes the temperatures of the soil mass/rock mass. Tomographs of electrical resistivity are calculated based on the measurements using Poisson's equation. Changes in the soil/rock resistivity can be related to changes in soil/rock temperatures when: (1) the electrical conductivity of the fluid trapped in the soil's pore space is low, (2) the soil/rock has a high cation exchange capacity and (3) the temperature changes are sufficiently high. When these three conditions exist the resistivity changes observed in the ERT tomographs can be directly attributed to changes in soil/rock temperatures. This method provides a way of mapping temperature changes in subsurface soils remotely. Distances over which the ERT method can be used to monitor changes in soil temperature range from tens to hundreds of meters from the electrode locations.

Simulation of variation of apparent resistivity in resistivity surveys using finite difference modelling with Monte Carlo analysis

NASA Astrophysics Data System (ADS)

Aguirre, E. E.; Karchewski, B.

2017-12-01

DC resistivity surveying is a geophysical method that quantifies the electrical properties of the subsurface of the earth by applying a source current between two electrodes and measuring potential differences between electrodes at known distances from the source. Analytical solutions for a homogeneous half-space and simple subsurface models are well known, as the former is used to define the concept of apparent resistivity. However, in situ properties are heterogeneous meaning that simple analytical models are only an approximation, and ignoring such heterogeneity can lead to misinterpretation of survey results costing time and money. The present study examines the extent to which random variations in electrical properties (i.e. electrical conductivity) affect potential difference readings and therefore apparent resistivities, relative to an assumed homogeneous subsurface model. We simulate the DC resistivity survey using a Finite Difference (FD) approximation of an appropriate simplification of Maxwell's equations implemented in Matlab. Electrical resistivity values at each node in the simulation were defined as random variables with a given mean and variance, and are assumed to follow a log-normal distribution. The Monte Carlo analysis for a given variance of electrical resistivity was performed until the mean and variance in potential difference measured at the surface converged. Finally, we used the simulation results to examine the relationship between variance in resistivity and variation in surface potential difference (or apparent resistivity) relative to a homogeneous half-space model. For relatively low values of standard deviation in the material properties (<10% of mean), we observed a linear correlation between variance of resistivity and variance in apparent resistivity.

Electrical contacts between cathodes and metallic interconnects in solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Yang, Zhenguo; Xia, Guanguang; Singh, Prabhakar; Stevenson, Jeffry W.

In this work, simulated cathode/interconnect structures were used to investigate the effects of different contact materials on the contact resistance between a strontium doped lanthanum ferrite cathode and a Crofer22 APU interconnect. Among the materials studied, Pt, which has a prohibitive cost for the application, demonstrated the best performance as a contact paste. For the relatively cost-effective perovskites, the contact ASR was found to depend on their electrical conductivity, scale growth on the metallic interconnect, and interactions between the contact material and the metallic interconnect or particularly the scale grown on the interconnect. Manganites appeared to promote manganese-containing spinel interlayer formation that helped minimize the increase of contact ASR. Chromium from the interconnects reacted with strontium in the perovskites to form SrCrO 4. An improved performance was achieved by application of a thermally grown (Mn,Co) 3O 4 spinel protection layer on Crofer22 APU that dramatically minimized the contact resistance between the cathodes and interconnects.

Effects of silicon nanowires (SiNWs) contents on the optical and dielectric properties of poly(3-hexylthiophene):SiNWs nanocomposites

NASA Astrophysics Data System (ADS)

Saidi, Hamza; Walid, Aloui; Bouazizi, Abdelaziz; Herrero, Beatriz Romero; Saidi, Faouzi

2017-08-01

In this study, we investigated the dependency of the optical and electrical proprieties of poly(3-hexylthiophene):silicon nanowires (P3HT:SiNWs) nanocomposites on the concentration of SiNWs based on photoluminescence (PL) and impedance spectroscopy. The PL spectra indicated the presence of charge transfer at low concentrations of SiNWs. The effects of the SiNWs contents on the loss mechanism were determined based on permittivity measurements, which were related to the distribution of the SiNWs contents on the polymer backbones, as well as being correlated with the PL and conductance results. The imaginary part of the impedance exhibited a high relaxation frequency attributable to Maxwell-Wagner polarization, where the extracted relaxation time was in the range of milliseconds. The Cole-Cole diagram had an excellent fit via the equivalent circuit, which incorporated the chemical capacitance Cμ, contact electrical resistance Rs, and recombination resistance Rp.

Correlation between electrical, mechanical and chemical properties of fresh and used aircraft engine oils

NASA Astrophysics Data System (ADS)

Gajewski, Juliusz B.; Głogowski, Marek J.; Paszkowski, Maciej; Czarnik-Matusewicz, Bogusława

2011-06-01

In this paper the results are presented of measurements of electrical, mechanical and chemical properties of fresh and used aircraft engine oils. Oils were used in a four-stroke aircraft engine and their samples were taken after the 50-hour work of the engine. The resistivity, permittivity and viscosity of oils were measured as a function of temperature. Additionally, some measurements of the absorbance spectra and size of particles contained in the oils were carried out. The significant reduction in the resistivity of the used Total oil was observed. The relative permittivity of both used oils was slightly increased. The oil's relative viscosity depends on temperature of oil and given time that elapsed from the very first moment when the shear force was applied in a rheometer. The results obtained allowed one to identify more precisely the chemical and physico-chemical interactions occurring in the tested samples, as compared with a typical infrared spectroscopy.

Temperature-Dependent Electrical and Micromechanical Properties of Lanthanum Titanate with Additions of Yttria

NASA Technical Reports Server (NTRS)

Goldsby, Jon C.

2010-01-01

Temperature-dependent elastic properties were determined by establishing continuous flexural vibrations in the material at its lowest resonance frequency of 31tHz. The imaginary part of the complex impedance plotted as a function of frequency and temperature reveals a thermally activated peak, which decreases in magnitude as the temperature increases. Additions of yttria do not degrade the electromechanical in particularly the elastic and anelastic properties of lanthanum titanate. Y2O3/La2Ti2O7 exhibits extremely low internal friction and hence may be more mechanical fatigue-resistant at low strains.

Subsurface Resistivity Structures in and Around Strike-Slip Faults - Electromagnetic Surveys and Drillings Across Active Faults in Central Japan -

NASA Astrophysics Data System (ADS)

Omura, K.; Ikeda, R.; Iio, Y.; Matsuda, T.

2005-12-01

Electrical resistivity is important property to investigate the structure of active faults. Pore fluid affect seriously the electrical properties of rocks, subsurface electrical resistivity can be an indicator of the existence of fluid and distribution of pores. Fracture zone of fault is expected to have low resistivity due to high porosity and small gain size. Especially, strike-slip type fault has nearly vertical fracture zone and the fracture zone would be detected by an electrical survey across the fault. We performed electromagnetic survey across the strike-slip active faults in central Japan. At the same faults, we also drilled borehole into the fault and did downhole logging in the borehole. We applied MT or CSAMT methods onto 5 faults: Nojima fault which appeared on the surface by the 1995 Great Kobe earthquake (M=7.2), western Nagano Ohtaki area(1984 Nagano-ken seibu earthquake (M=6.8), the fault did not appeared on the surface), Neodani fault which appeared by the 1891 Nobi earthquake (M=8.0), Atera fault which seemed to be dislocated by the 1586 Tensyo earthquake (M=7.9), Gofukuji fault that is considered to have activated about 1200 years ago. The sampling frequencies of electrical and magnetic field were 2 - 1024Hz (10 frequencies) for CSAMT survey and 0.00055 - 384Hz (40 frequencies) for MT survey. The electromagnetic data were processed by standard method and inverted to 2-D resistivity structure along transects of the faults. Results of the survey were compared with downhole electrical logging data and observational descriptions of drilled cores. Fault plane of each fault were recognized as low resistivity region or boundary between relatively low and high resistivity region, except for Gofukuji fault. As for Gofukuji fault, fault was located in relatively high resistivity region. During very long elapsed time from the last earthquake, the properties of fracture zone of Gofukuji fault might changed from low resistivity properties as observed for other faults. Downhole electrical logging data were consistent to values of resistivity estimated by electromagnetic survey for each fault. The existence of relatively low and high resistivity regions in 2-D structure from electromagnetic survey was observed again by downhole logging at the correspondent portion in the borehole. Cores recovered from depthes where the electrical logging showed low resistivity were hardly fractured and altered from host rock which showed high resistivity. Results of electromagnetic survey, downhole electrical logging and observation of drilled cores were consistent to each other. In present case, electromagnetic survey is useful to explore the properties of fault fracture zone. In the further investigations, it is important to explore relationships among features of resistivity structure and geological and geophysical situations of the faults.

Sub-micrometer particles produced by a low-powered AC electric arc in liquids.

PubMed

Jaworski, Jacek A; Fleury, Eric

2012-01-01

The article presents the report of the production of composites of sub-micrometer metal particles in matrix consisted of the metal compounds by means of an AC electric arc in water and paraffin solutions using electrodes carbon-metal and metal-metal (metal: Ni, Fe, Co, Cu). The advantage of this method is the low electric power (from 5 to 10 W) needed in comparison to standard DC arc-discharge methods (0.8 to 3 kW). This method enables the production of particles from conductive material also in wide range of temperature and in solvent which could be either transparent to light or opaque. Moreover the solvent can be electrolyte or insulating liquid. The microstructure of the composite layer was investigated by scanning electron microscopy (SEM), Electron Probe Microanalysis (EPMA) and X-ray. During particles production in water metal oxides were created. Additionally using cobalt-copper, nickel-copper as couple electrodes, insoluble in water copper (II) hydroxide crystal grains were created additionally which crystals shape was depended on transition metal. For iron-copper couple electrodes system the copper (II) hydroxide was not formed. Experiments with sequence production of Ni and Fe particles with C electrode assisting in molten paraffin let to obtain both Ni and Fe particles surrounded by paraffin. After solidification the material was insulator but if locally magnetic field influenced on the liquid solution in that place after solidification a new composite was created which was electric current conductor with resistivity around 0.1 omega x m, was attracted by magnetic field and presented magneto resistance around 0.4% in changing magnetic field in a range 150 mT. After mixing the concentrated paraffin with normal paraffin resistivity of the mixture increased and it became photosensitive and created small voltage under light influence.

Modeling pore corrosion in normally open gold- plated copper connectors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battaile, Corbett Chandler; Moffat, Harry K.; Sun, Amy Cha-Tien

2008-09-01

The goal of this study is to model the electrical response of gold plated copper electrical contacts exposed to a mixed flowing gas stream consisting of air containing 10 ppb H{sub 2}S at 30 C and a relative humidity of 70%. This environment accelerates the attack normally observed in a light industrial environment (essentially a simplified version of the Battelle Class 2 environment). Corrosion rates were quantified by measuring the corrosion site density, size distribution, and the macroscopic electrical resistance of the aged surface as a function of exposure time. A pore corrosion numerical model was used to predict bothmore » the growth of copper sulfide corrosion product which blooms through defects in the gold layer and the resulting electrical contact resistance of the aged surface. Assumptions about the distribution of defects in the noble metal plating and the mechanism for how corrosion blooms affect electrical contact resistance were needed to complete the numerical model. Comparisons are made to the experimentally observed number density of corrosion sites, the size distribution of corrosion product blooms, and the cumulative probability distribution of the electrical contact resistance. Experimentally, the bloom site density increases as a function of time, whereas the bloom size distribution remains relatively independent of time. These two effects are included in the numerical model by adding a corrosion initiation probability proportional to the surface area along with a probability for bloom-growth extinction proportional to the corrosion product bloom volume. The cumulative probability distribution of electrical resistance becomes skewed as exposure time increases. While the electrical contact resistance increases as a function of time for a fraction of the bloom population, the median value remains relatively unchanged. In order to model this behavior, the resistance calculated for large blooms has been weighted more heavily.« less

Oxidation Resistance, Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 with SiC, TaSi2, and LaB6 Additives

DTIC Science & Technology

2012-01-26

Resistance , Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 "With SiC, TaSi2, and LaB6 Additives Sb. GRANT NUMBER... RESISTANCE , ELECTRICAL AND THERMAL CONDUCTIVITY, AND SPECTRAL EMITTANCE OF FULLY DENSE HfB2 AND ZrB2 WITH SiC, TaSi2, AND LaB6 ADDITIVES Air Force Office...thickened regions with dry 220 grit SiC sandpaper so that a low- resistance electrical connection could be achieved. A handheld multimeter was used to measure

Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN

NASA Astrophysics Data System (ADS)

Jyothi, I.; Reddy, V. Rajagopal

2010-10-01

A W/Ti/Au multilayer scheme has been fabricated for achieving thermally stable low-resistance ohmic contact to n-type GaN (4.0 × 10 18 cm -3). It is shown that the as-deposited W/Ti/Au contact exhibits near linear I- V behaviour. However, annealing at temperature below 800 °C the contacts exhibit non-linear behaviour. After annealing at a temperature in excess of 850 °C, the W/Ti/Au contact showed ohmic behaviour. The W/Ti/Au contact produced specific contact resistance as low as 6.7 × 10 -6 Ω cm 2 after annealing at 900 °C for 1 min in a N 2 ambient. It is noted that the specific contact resistance decreases with increase in annealing temperature. It is also noted that annealing the contacts at 900 °C for 30 min causes insignificant degradation of the electrical and thermal properties. It is further shown that the overall surface morphology of the W/Ti/Au stayed fairly smooth even after annealing at 900 °C. The W/Ti/Au ohmic contact showed good edge sharpness after annealing at 900 °C for 30 min. Based on the Auger electron spectroscopy and glancing angle X-ray diffraction results, possible explanation for the annealing dependence of the specific contact resistance of the W/Ti/Au contacts are described and discussed.

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

DOE PAGES

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

2018-04-10

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb 2Pt 2Pb, a metal where itinerant electrons coexist with localized moments of Yb-ions which can be described in terms of effective S = 1/2 spins with dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the twomore » interacting subsystems. Lastly, we characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasi linear temperature dependence.« less

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb 2Pt 2Pb, a metal where itinerant electrons coexist with localized moments of Yb-ions which can be described in terms of effective S = 1/2 spins with dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the twomore » interacting subsystems. Lastly, we characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasi linear temperature dependence.« less

Thermoelectric properties of Ge 1-xSn xTe crystals grown by vertical Bridgman method

NASA Astrophysics Data System (ADS)

Wu, C. C.; Ferng, N. J.; Gau, H. J.

2007-06-01

Single crystals of Ge 1-xSn xTe compounds with x=0, 0.8, 0.9 and 1.0 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, metallographic microscope as well as electron-probe microanalysis (EPMA). Electrical property of the as-grown samples was characterized using room temperature resistivity and Hall measurements. The thermoelectric behaviors for the Ge 1-xSn xTe crystals were studied by means of thermal and carrier transport measurements. Temperature dependences of resistivity, Seebeck coefficient and thermal conductivity for the various compositions of Ge 1-xSn xTe were analyzed. A two-valence band model was proposed to describe the temperature dependence of thermoelectric property of the Ge 1-xSn xTe crystals. The dimensionless thermoelectric figure of merit ZT for the alloys was evaluated and discussed.

Electron transport in the two-dimensional channel material - zinc oxide nanoflake

NASA Astrophysics Data System (ADS)

Lai, Jian-Jhong; Jian, Dunliang; Lin, Yen-Fu; Ku, Ming-Ming; Jian, Wen-Bin

2018-03-01

ZnO nanoflakes of 3-5 μm in lateral size and 15-20 nm in thickness are synthesized. The nanoflakes are used to make back-gated transistor devices. Electron transport in the ZnO nanoflake channel between source and drain electrodes are investigated. In the beginning, we argue and determine that electrons are in a two-dimensional system. We then apply Mott's two-dimensional variable range hopping model to analyze temperature and electric field dependences of resistivity. The disorder parameter, localization length, hopping distance, and hopping energy of the electron system in ZnO nanoflakes are obtained and, additionally, their temperature behaviors and dependences on room-temperature resistivity are presented. On the other hand, the basic transfer characteristics of the channel material are carried out, as well, and the carrier concentration, the mobility, and the Fermi wavelength of two-dimensional ZnO nanoflakes are estimated.

Resistive switching in TiO2 nanocolumn arrays electrochemically grown

NASA Astrophysics Data System (ADS)

Marik, M.; Mozalev, A.; Hubalek, J.; Bendova, M.

2017-04-01

Resistive switching in metal oxides, especially in TiO2, has been intensively investigated for potential application in non-volatile memory microdevices. As one of the working mechanisms, a conducting filament consisting of a substoichiometric oxide phase is created within the oxide layer. With the aim of investigating the filament formation in spatially confined elements, we fabricate arrays of self-ordered TiO2 nanocolumns by porous-anodic-alumina (PAA)-assisted anodizing, incorporate them into solid-state microdevices, study their electron transport properties, and reveal that this anodizing approach is suitable for growing TiO2 nanostructures exhibiting resistive switching. The electrical properties and resistive switching behavior are both dependent on the electrolytic formation conditions, influencing the concentration and distribution of oxygen vacancies in the nanocolumn material during the film growth. Therefore, the PAA-assisted TiO2 nanocolumn arrays can be considered as a platform for investigating various phenomena related to resistive switching in valve metal oxides at the nanoscale.

Applying petrophysical models to radar travel time and electrical resistivity tomograms: Resolution-dependent limitations

USGS Publications Warehouse

Day-Lewis, F. D.; Singha, K.; Binley, A.M.

2005-01-01

Geophysical imaging has traditionally provided qualitative information about geologic structure; however, there is increasing interest in using petrophysical models to convert tomograms to quantitative estimates of hydrogeologic, mechanical, or geochemical parameters of interest (e.g., permeability, porosity, water content, and salinity). Unfortunately, petrophysical estimation based on tomograms is complicated by limited and variable image resolution, which depends on (1) measurement physics (e.g., electrical conduction or electromagnetic wave propagation), (2) parameterization and regularization, (3) measurement error, and (4) spatial variability. We present a framework to predict how core-scale relations between geophysical properties and hydrologic parameters are altered by the inversion, which produces smoothly varying pixel-scale estimates. We refer to this loss of information as "correlation loss." Our approach upscales the core-scale relation to the pixel scale using the model resolution matrix from the inversion, random field averaging, and spatial statistics of the geophysical property. Synthetic examples evaluate the utility of radar travel time tomography (RTT) and electrical-resistivity tomography (ERT) for estimating water content. This work provides (1) a framework to assess tomograms for geologic parameter estimation and (2) insights into the different patterns of correlation loss for ERT and RTT. Whereas ERT generally performs better near boreholes, RTT performs better in the interwell region. Application of petrophysical models to the tomograms in our examples would yield misleading estimates of water content. Although the examples presented illustrate the problem of correlation loss in the context of near-surface geophysical imaging, our results have clear implications for quantitative analysis of tomograms for diverse geoscience applications. Copyright 2005 by the American Geophysical Union.

Electrical properties of materials for high temperature strain gage applications

NASA Technical Reports Server (NTRS)

Brittain, John O.

1989-01-01

A study was done on the electrical resistance of materials that are potentially useful as resistance strain gages at high temperatures under static strain conditions. Initially a number of binary alloys were investigated. Later, third elements were added to these alloys, all of which were prepared by arc melting. Several transition metals were selected for experimentation, most prepared as thin films. Difficulties with electrical contacts thwarted efforts to extend measurements to the targeted 1000 C, but results obtained did suggest ways of improving the electrical resistance characteristics of certain materials.

The electrical resistance of gold-capped chromium thin films

NASA Astrophysics Data System (ADS)

Ohashi, Masashi; Sawabu, Masaki; Ohashi, Kohei; Miyagawa, Masahiro; Maeta, Kae; Kubota, Takahide; Takanashi, Koki

2018-03-01

We studied the electrical resistance of polycrystalline chromium films capped by a gold layer. No anomaly was detected by resistance measurements of 10 nm thick film around room temperature, indicating that the antiferromagnetic interaction may be suppressed as decreasing the thickness of the chromium film. The sheet resistance Rs (T) curves differ from polycrystalline chromium films in previous studies because of the electrical current flows through a gold capping layer. On the other hand, the resistance drop is observed at T C = 1.15±0.05 K as that of polycrystalline chromium films in the previous report. It means that such resistance drop is not related to the chromium oxide layer on a polycrystalline chromium films. However, it is difficult to conclude that superconducting transition occurs because of the large residual resistance below the temperature where the resistance drop is observed.

Resolution capacity of geophysical monitoring regarding permafrost degradation induced by hydrological processes

NASA Astrophysics Data System (ADS)

Mewes, Benjamin; Hilbich, Christin; Delaloye, Reynald; Hauck, Christian

2017-12-01

Geophysical methods are often used to characterize and monitor the subsurface composition of permafrost. The resolution capacity of standard methods, i.e. electrical resistivity tomography and refraction seismic tomography, depends not only on static parameters such as measurement geometry, but also on the temporal variability in the contrast of the geophysical target variables (electrical resistivity and P-wave velocity). Our study analyses the resolution capacity of electrical resistivity tomography and refraction seismic tomography for typical processes in the context of permafrost degradation using synthetic and field data sets of mountain permafrost terrain. In addition, we tested the resolution capacity of a petrophysically based quantitative combination of both methods, the so-called 4-phase model, and through this analysed the expected changes in water and ice content upon permafrost thaw. The results from the synthetic data experiments suggest a higher sensitivity regarding an increase in water content compared to a decrease in ice content. A potentially larger uncertainty originates from the individual geophysical methods than from the combined evaluation with the 4-phase model. In the latter, a loss of ground ice can be detected quite reliably, whereas artefacts occur in the case of increased horizontal or vertical water flow. Analysis of field data from a well-investigated rock glacier in the Swiss Alps successfully visualized the seasonal ice loss in summer and the complex spatially variable ice, water and air content changes in an interannual comparison.

Magnetic and Fermi Surface Properties of EuGa4

NASA Astrophysics Data System (ADS)

Nakamura, Ai; Hiranaka, Yuichi; Hedo, Masato; Nakama, Takao; Miura, Yasunao; Tsutsumi, Hiroki; Mori, Akinobu; Ishida, Kazuhiro; Mitamura, Katsuya; Hirose, Yusuke; Sugiyama, Kiyohiro; Honda, Fuminori; Settai, Rikio; Takeuchi, Tetsuya; Hagiwara, Masayuki; Matsuda, Tatsuma D.; Yamamoto, Etsuji; Haga, Yoshinori; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Harima, Hisatomo; Ōnuki, Yoshichika

2013-10-01

We grew a high-quality single crystal EuGa4 with the tetragonal structure by the Ga self-flux method, and measured the electrical resistivity, magnetic susceptibility, high-field magnetization, specific heat, thermoelectric power and de Haas--van Alphen (dHvA) effect, together with the electrical resistivity and thermoelectric power under pressure. EuGa4 is found to be a Eu-divalent compound without anisotropy of the magnetic susceptibility in the paramagnetic state and to reveal the same magnetization curve between H \\parallel [100] and [001] in the antiferromagnetic state, where the antiferromagnetic easy-axis is oriented along the [100] direction below a Néel temperature TN=16.5 K. The magnetization curve is discussed on the basis of a simple two-sublattice model. The Fermi surface in the paramagnetic state was clarified from the results of a dHvA experiment for EuGa4 and an energy band calculation for a non-4f reference compound SrGa4, which consists of a small ellipsoidal hole--Fermi surface and a compensated cube-like electron--Fermi surface with vacant space in center. We observed an anomaly in the temperature dependence of the electrical resistivity and thermoelectric power at TCDW=150 K under 2 GPa. This might correspond to an emergence of the charge density wave (CDW). The similar phenomenon was also observed in EuAl4 at ambient pressure. We discussed the CDW phenomenon on the basis of the present peculiar Fermi surfaces.

Magnetic order of Nd 5 Pb 3 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Jiaqiang; Ochi, Masayuki; Cao, Huibo B.

We report millimeter-sized Nd 5Pb 3 single crystals grown out of a Nd–Co flux. We experimentally study the magnetic order of Nd 5Pb 3 single crystals by measuring the anisotropic magnetic properties, electrical resistivity under high pressure up to 8 GPa, specific heat, and neutron single crystal diffraction. Two successive magnetic orders are observed at T N1 = 44 K and T N2 = 8 K. The magnetic cells can be described with a propagation vector $k=(0.5, 0, 0)$ . Cooling below T N1, Nd1 and Nd3 order forming ferromagnetic stripes along the b-axis, and the ferromagnetic stripes are coupledmore » antiferromagnetically along the a-axis for the $k=(0.5, 0, 0)$ magnetic domain. Cooling below T N2, Nd2 orders antiferromagnetically to nearby Nd3 ions. All ordered moments align along the crystallographic c-axis. The magnetic order at T N1 is accompanied by a quick drop of electrical resistivity upon cooling and a lambda-type anomaly in the temperature dependence of specific heat. At T N2, no anomaly was observed in electrical resistivity but there is a weak feature in specific heat. The resistivity measurements under hydrostatic pressures up to 8 GPa suggest a possible phase transition around 6 GPa. Our first-principles band structure calculations show that Nd 5Pb 3 has the same electronic structure as does Y 5Si 3 which has been reported to be a one-dimensional electride with anionic electrons that do not belong to any atom. Our study suggests that R 5Pb 3 (R = rare earth) can be a materials playground for the study of magnetic electrides. To conclude, this deserves further study after experimental confirmation of the presence of anionic electrons.« less

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

Magnetic order of Nd 5 Pb 3 single crystals

DOE PAGES

Yan, Jiaqiang; Ochi, Masayuki; Cao, Huibo B.; ...

2018-03-02

We report millimeter-sized Nd 5Pb 3 single crystals grown out of a Nd–Co flux. We experimentally study the magnetic order of Nd 5Pb 3 single crystals by measuring the anisotropic magnetic properties, electrical resistivity under high pressure up to 8 GPa, specific heat, and neutron single crystal diffraction. Two successive magnetic orders are observed at T N1 = 44 K and T N2 = 8 K. The magnetic cells can be described with a propagation vector $k=(0.5, 0, 0)$ . Cooling below T N1, Nd1 and Nd3 order forming ferromagnetic stripes along the b-axis, and the ferromagnetic stripes are coupledmore » antiferromagnetically along the a-axis for the $k=(0.5, 0, 0)$ magnetic domain. Cooling below T N2, Nd2 orders antiferromagnetically to nearby Nd3 ions. All ordered moments align along the crystallographic c-axis. The magnetic order at T N1 is accompanied by a quick drop of electrical resistivity upon cooling and a lambda-type anomaly in the temperature dependence of specific heat. At T N2, no anomaly was observed in electrical resistivity but there is a weak feature in specific heat. The resistivity measurements under hydrostatic pressures up to 8 GPa suggest a possible phase transition around 6 GPa. Our first-principles band structure calculations show that Nd 5Pb 3 has the same electronic structure as does Y 5Si 3 which has been reported to be a one-dimensional electride with anionic electrons that do not belong to any atom. Our study suggests that R 5Pb 3 (R = rare earth) can be a materials playground for the study of magnetic electrides. To conclude, this deserves further study after experimental confirmation of the presence of anionic electrons.« less

Spin-dependence of the electron scattering cross section by a magnetic layer system and the magneto-resistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, J.T.; Tang, F.; Brown, W.D.

1998-12-20

The authors present a theoretical model for calculating the spin-dependent cross section of the scattering of electrons by a magnetic layer system. The model demonstrates that the cross sections of the scattering are different for spin up and spin down electrons. The model assumes that the electrical resistivity in a conductor is proportional to the scattering cross section of the electron in it. It is believed to support the two channel mechanism in interpreting magneto-resistance (MR). Based on the model without considering the scattering due to the interfacial roughness and the spin flipping scattering, the authors have established a relationshipmore » between MR and the square of the magnetic moment in the bulk sample without considering the scattering due to the interfacial roughness and the spin flipping scattering. It can also qualitatively explain the MR difference between the current in plane (CIP) and current perpendicular to the plane (CPP) configurations. The predictions by the model agree well with the experimental findings.« less

Can multi-scale calibrations allow MT-derived resistivities to be used to probe the structure of the deep crust?

NASA Astrophysics Data System (ADS)

Toy, Virginia; Billia, Marco; Easingwood, Richard; Kirilova, Martina; Kluge, Emma; Sauer, Katrina; Sutherland, Rupert; Timms, Nicholas; Townend, John

2017-04-01

Our current knowledge of microstructural and mechanical controls on rock resistivity is such that identical magnetotelluric (MT) anomalies could result from a highly mineralized but extinct shear zone, or from an unmineralized, fluid saturated, active shear zone. In pursuit of the ability to interpret the structure and activity (rather than just the presence) of buried geological structures from electromagnetic data, we are investigating correlations between rock structure and electrical properties of ductile shear zone rocks recovered from the active Alpine Fault Zone, New Zealand. Multi-scale measurements of resistivity exist for this zone: its ductile portions have anomalously high electrical conductivity identified in MT models constructed as part of the South Island Geophysical Transect (SIGHT). Additionally wireline resistivities were measured in situ to 820 m depth during the recent Deep Fault Drilling Project (DFDP-2), and resisistivity of hand samples has been measured at laboratory conditions [Kluge et al., Abstract EGU2017-10139]. In exhumed and borehole samples, the distributions and arrangements of conductivity carriers - graphite, amorphous carbon, and grain boundary pores that would have contained brines or other conductive fluids at depth, have been characterised. These vary systematically according to the total ductile shear strain they have accommodated [Kirilova et al., Abstract EGU2017-5773; Sauer et al., Abstract EGU2017-10485]. Transmission electron microscopy analyses of grain boundaries also indicate that they contain carbon. The next phases of our investigation involve: (i) construction of crustal fluid composition models by quantitative microstructural and compositional/mineralogical mapping of fluid remnants and their solid residues and calibration of these using in situ measurements of fluid composition in DFDP-2 at depths to 820 m; (ii) calculation of resistivities for real microstructures based on electrical properties of the individual component minerals and fluids - for microstructures fully characterised in three-dimensions; (iii) measurement of the effects of dynamic linking of phases during ductile creep of solid rock on complex resistivity of DFDP samples at a range of realistic crustal temperatures and pressures. A particular challenge in this study is to determine appropriate scaling relationships of electrical properties among samples, boreholes, and MT models because dielectric constants of minerals depend on frequency of the imposed current, which varies with scale and, consequently, measurement method. We invite discussion of strategies to overcome this.

Germanium Resistance Thermometer For Subkelvin Temperatures

NASA Technical Reports Server (NTRS)

Castles, Stephen H.

1993-01-01

Improved germanium resistance thermometer measures temperatures as small as 0.01 K accurately. Design provides large area for electrical connections (to reduce electrical gradients and increase sensitivity to changes in temperatures) and large heat sink (to minimize resistance heating). Gold pads on top and bottom of germanium crystal distribute electrical current and flow of heat nearly uniformly across crystal. Less expensive than magnetic thermometers or superconducting quantum interference devices (SQUID's) otherwise used.

The Development and Application of Simulative Insulation Resistance Tester

NASA Astrophysics Data System (ADS)

Jia, Yan; Chai, Ziqi; Wang, Bo; Ma, Hao

2018-02-01

The insulation state determines the performance and insulation life of electrical equipment, so it has to be judged in a timely and accurate manner. Insulation resistance test, as the simplest and most basic test of high voltage electric tests, can measure the insulation resistance and absorption ratio which are effective criterion of part or whole damp or dirty, breakdown, severe overheating aging and other insulation defects. It means that the electrical test personnel need to be familiar with the principle of insulation resistance test, and able to operate the insulation resistance tester correctly. At present, like the insulation resistance test, most of electrical tests are trained by physical devices with the real high voltage. Although this allows the students to truly experience the test process and notes on security, it also has certain limitations in terms of safety and test efficiency, especially for a large number of new staves needing induction training every year. This paper presents a new kind of electrical test training system based on the simulative device of dielectric loss measurement and simulative electrical testing devices. It can not only overcome the defects of current training methods, but also provide other advantages in economical efficiency and scalability. That makes it possible for the system to be allied in widespread.

The Influence of Basic Physical Properties of Soil on its Electrical Resistivity Value under Loose and Dense Condition

NASA Astrophysics Data System (ADS)

Abidin, M. H. Z.; Ahmad, F.; Wijeyesekera, D. C.; Saad, R.

2014-04-01

Electrical resistivity technique has become a famous alternative tool in subsurface characterization. In the past, several interpretations of electrical resistivity results were unable to be delivered in a strong justification due to lack of appreciation of soil mechanics. Traditionally, interpreters will come out with different conclusion which commonly from qualitative point of view thus creating some uncertainty regarding the result reliability. Most engineers desire to apply any techniques in their project which are able to provide some clear justification with strong, reliable and meaningful results. In order to reduce the problem, this study presents the influence of basic physical properties of soil due to the electrical resistivity value under loose and dense condition. Two different conditions of soil embankment model were tested under electrical resistivity test and basic geotechnical test. It was found that the electrical resistivity value (ERV, ρ) was highly influenced by the variations of soil basic physical properties (BPP) with particular reference to moisture content (w), densities (ρbulk/dry), void ratio (e), porosity (η) and particle grain fraction (d) of soil. Strong relationship between ERV and BPP can be clearly presents such as ρ ∞ 1/w, ρ ∞ 1/ρbulk/dry, ρ ∞ e and ρ ∞ η. This study therefore contributes a means of ERV data interpretation using BPP in order to reduce ambiguity of ERV result and interpretation discussed among related persons such as geophysicist, engineers and geologist who applied these electrical resistivity techniques in subsurface profile assessment.

The formation, structure and physical properties of M(2)Pd(14+x)B(5-y) compounds, with M =  La, Ce, Pr, Nd, Sm, Eu, Gd, Lu and Th.

PubMed

Royanian, E; Bauer, E; Kaldarar, H; Galatanu, A; Khan, R T; Hilscher, G; Michor, H; Reissner, M; Rogl, P; Sologub, O; Giester, G; Gonçalves, A P

2009-07-29

Novel ternary compounds, M(2)Pd(14+x)B(5-y) (M =  La, Ce, Pr, Nd, Sm, Eu, Gd, Lu, Th; x∼0.9, y∼0.1), have been synthesized by arc melting. The crystal structures of Nd(2)Pd(14+x)B(5-y) and Th(2)Pd(14+x)B(5-y) were determined from x-ray single-crystal data and both are closely related to the structure type of Sc(4)Ni(29)B(10). All compounds were characterized by Rietveld analyses and found to be isotypic with the Nd(2)Pd(14+x)B(5-y) type. Measurements of the temperature dependent susceptibility and specific heat as well as the temperature and field dependent resistivity were employed to derive basic information on bulk properties of these compounds. The electrical resistivity of M(2)Pd(14+x)B(5-y), in general, is characterized by small RRR (residual resistance ratio) values originating from defects inherent to the crystal structure. Whereas the compounds based on Ce, Nd, Sm and Gd exhibit magnetic order, those based on Pr and Eu seem to be non-magnetic, at least down to 400 mK. While the non-magnetic ground state of the Pr based compound is a consequence of crystalline electric field effects in the context of the non-Kramers ion Pr, the lack of magnetic order in the case of the Eu based compound results from an intermediate valence state of the Eu ion.

Electrical characteristics of Graphene based Field Effect Transistor (GFET) biosensor for ADH detection

NASA Astrophysics Data System (ADS)

Selvarajan, Reena Sri; Hamzah, Azrul Azlan; Majlis, Burhanuddin Yeop

2017-08-01

First pristine graphene was successfully produced by mechanical exfoliation and electrically characterized in 2004 by Andre Geim and Konstantin Novoselov at University of Manchester. Since its discovery in 2004, graphene also known as `super' material that has enticed many researchers and engineers to explore its potential in ultrasensitive detection of analytes in biosensing applications. Among myriad reported sensors, biosensors based on field effect transistors (FETs) have attracted much attention. Thus, implementing graphene as conducting channel material hastens the opportunities for production of ultrasensitive biosensors for future device applications. Herein, we have reported electrical characteristics of graphene based field effect transistor (GFET) for ADH detection. GFET was modelled and simulated using Lumerical DEVICE charge transport solver (DEVICE CT). Electrical characteristics comprising of transfer and output characteristics curves are reported in this study. The device shows ambipolar curve and achieved a minimum conductivity of 0.23912 e5A at Dirac point. However, the curve shifts to the left and introduces significant changes in the minimum conductivity as drain voltage is increased. Output characteristics of GFET exhibits linear Id - Vd dependence characteristics for gate voltage ranging from 0 to 1.5 V. In addition, behavior of electrical transport through GFET was analyzed for various simulation temperatures. It clearly proves that the electrical transport in GFET is dependent on the simulation temperature as it may vary the maximum resistance in channel of the device. Therefore, this unique electrical characteristics of GFET makes it as a promising candidate for ultrasensitive detection of small biomolecules such as ADH in biosensing applications.

Sensitive photo-thermal response of graphene oxide for mid-infrared detection

NASA Astrophysics Data System (ADS)

Bae, Jung Jun; Yoon, Jung Hyun; Jeong, Sooyeon; Moon, Byoung Hee; Han, Joong Tark; Jeong, Hee Jin; Lee, Geon-Woong; Hwang, Ha Ryong; Lee, Young Hee; Jeong, Seung Yol; Lim, Seong Chu

2015-09-01

This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to -4% K-1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability.This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to -4% K-1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04039f

How absolute EIT reflects the dependence of unilateral lung aeration on hyper-gravity and weightlessness?

PubMed

Hahn, G; Just, A; Hellige, G; Dittmar, J; Quintel, M

2013-09-01

We studied the influence of three gravity levels (0, 1 and 1.8 g) on unilateral lung aeration in a left lateral position by the application of absolute electrical impedance tomography. The electrical resistivity of the lung tissue was considered to be a meaningful indicator for lung aeration since changes in resistivity have already been validated in other studies to be proportional to changes in lung volume. Twenty-two healthy volunteers were studied during parabolic flights with three phases of different gravity, each lasting ∼20-22 s. Spontaneous breathing at normal tidal volume VT and at increased VT was performed. During transition to hyper-gravity mean expiratory resistivities (±SD in Ωm) increased at normal VT in the upper (right) lung from 7.6 ± 1.5 to 8.0 ± 1.7 and decreased from 5.8 ± 1.2 to 5.7 ± 1.2 in the lower (left) lung. Inspiratory resistivity values are 8.3 ± 1.6 to 8.8 ± 1.8 (right) and 6.3 ± 1.3 to 6.0 ± 1.3 (left). At increased VT, the changes in resistivities at end-expiration were 7.7 ± 1.5 to 8.0 ± 1.7 (right) and 5.8 ± 1.2 to 5.7 ± 1.2 (left). Corresponding end-inspiratory values are 9.9 ± 1.9 to 10.0 ± 2.0 (right) and 8.6 ± 2.1 to 7.9 ± 2.0 (left). During weightlessness, the distortion in the lungs disappeared and both lungs showed a nearly identical aeration, which was between the levels displayed at normal gravity. The small increase in resistivity for the upper lung during transition to hyper-gravity from 1 to 1.8 g at increased VT suggests that the degressive part of the pressure-volume curve has already been reached at end-inspiration. The results for a left lateral position are in agreement with West's lung model which has been introduced for cranio-caudal gravity dependence in the lungs.

[Modeling and experimental study on frequency-domain electricity properties of biological materials].

PubMed

Tian, Hua; Luo, Shiqiang; Zhang, Rui; Yang, Gang; Huang, Hua

2009-12-01

Frequency-domain electricity properties of four objects, including bullfrog skin, bullfrog muscle, triply distilled water and 0.9% NaCl, were tested in the range of 100Hz-10MHz using home-made electrode and measuring system. The experimental results showed that the resistance of 0.9% NaCl decreased dramatically, that the amplitude frequency characteristics of bullfrog's muscle and skin were similar, but that of triply distilled water did not change significantly. The frequency dependence of 0.9% NaCl showed that the electrode had great influence on the measuring system, so a new equivalent circuit model based on the electrode system was needed. These findings suggest that the new five-parameter equivalent circuit model, which embodies considerations on the interaction between electrodes and tissues, is a reasonable equivalent circuit for studying the electrical characteristics of biological materials.

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

PubMed

Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

2010-07-27

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

Fabrication and electrical characterization of silicon nanowires based resistors

NASA Astrophysics Data System (ADS)

Ni, L.; Demami, F.; Rogel, R.; Salaün, A. C.; Pichon, L.

2009-11-01

Silicon nanowires (SiNWs) are synthesized via the Vapor-Liquid-Solid (VLS) mechanism using gold (Au) as metal catalyst and silane (SiH4) as precursor gas. Au nanoparticles are employed as liquid droplets catalysis during the SiNWs growth performed in a hot wall LPCVD reactor at 480°C and 40 Pa. SiNWs local synthesis at micron scale is demonstrated using classical optical photolithography process. SiNWs grow with high density anchored at the dedicated catalyst islands. This resulting network is used to interconnect two heavily doped polysilicon interdigitated electrodes leading to the formation of electrical resistors in a coplanar structure. Current-voltage (I-V) characteristics highlight a symmetric shape. The temperature dependence of the electrical resistance is activated, with activation energy of 0.47 eV at temperatures greater than 300K.

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

NASA Astrophysics Data System (ADS)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Coaxial Electric Heaters

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Matsko, Andrey; Savchenkov, Anatoliy; Maleki, Lute

2008-01-01

Coaxial electric heaters have been conceived for use in highly sensitive instruments in which there are requirements for compact heaters but stray magnetic fields associated with heater electric currents would adversely affect operation. Such instruments include atomic clocks and magnetometers that utilize heated atomic-sample cells, wherein stray magnetic fields at picotesla levels could introduce systematic errors into instrument readings. A coaxial electric heater is essentially an axisymmetric coaxial cable, the outer conductor of which is deliberately made highly electrically resistive so that it can serve as a heating element. As in the cases of other axisymmetric coaxial cables, the equal magnitude electric currents flowing in opposite directions along the inner and outer conductors give rise to zero net magnetic field outside the outer conductor. Hence, a coaxial electric heater can be placed near an atomic-sample cell or other sensitive device. A coaxial electric heater can be fabricated from an insulated copper wire, the copper core of which serves as the inner conductor. For example, in one approach, the insulated wire is dipped in a colloidal graphite emulsion, then the emulsion-coated wire is dried to form a thin, uniform, highly electrically resistive film that serves as the outer conductor. Then the film is coated with a protective layer of high-temperature epoxy except at the end to be electrically connected to the power supply. Next, the insulation is stripped from the wire at that end. Finally, electrical leads from the heater power supply are attached to the exposed portions of the wire and the resistive film. The resistance of the graphite film can be tailored via its thickness. Alternatively, the film can be made from an electrically conductive paint, other than a colloidal graphite emulsion, chosen to impart the desired resistance. Yet another alternative is to tailor the resistance of a graphite film by exploiting the fact that its resistance can be changed permanently within about 10 percent by heating it to a temperature above 300 C. A coaxial heater, with electrical leads attached, that has been bent into an almost full circle for edge heating of a circular window is shown. (In the specific application, there is a requirement for a heated cell window, through which an optical beam enters the cell.)

Electrical analysis of c-Si/CGSe monolithic tandem solar cells by using a cell-selective light absorption scheme.

PubMed

Jeong, Ah Reum; Choi, Sung Bin; Kim, Won Mok; Park, Jong-Keuk; Choi, Jihye; Kim, Inho; Jeong, Jeung-Hyun

2017-11-16

A monolithic tandem solar cell consisting of crystalline Si (c-Si)/indium tin oxide (ITO)/CuGaSe 2 (CGSe) was demonstrated by stacking a CGSe solar cell on a c-Si/ITO solar cell to obtain a photovoltaic conversion efficiency of about 10%. Electrical analyses based on cell-selective light absorption were applied to individually characterize the photovoltaic performances of the top and bottom subcells. Illumination at a frequency that could be absorbed only by a targeted top or bottom subcell permitted measurement of the open-circuit voltage of the target subcell and the shunt resistance of the non-target subcell. The cell parameters measured from each subcell were very similar to those of the corresponding single cell, confirming the validity of the suggested method. In addition, separating the light absorption intensities at the top and bottom subcells made us measure the bias-dependent photocurrent for each subcell. The series resistance of a c-Si/ITO/CGSe cell subjected to bottom-cell limiting conditions was slightly large, implying that the tunnel junction was a little resistive or slightly beyond ohmic. This analysis demonstrated that aside from producing a slightly resistive tunnel junction, our fabrication processes were successful in monolithically integrating a CGSe cell onto a c-Si/ITO cell without degrading the performances of both cells.

Performance Analysis and Modeling of Thermally Sprayed Resistive Heaters

NASA Astrophysics Data System (ADS)

Lamarre, Jean-Michel; Marcoux, Pierre; Perrault, Michel; Abbott, Richard C.; Legoux, Jean-Gabriel

2013-08-01

Many processes and systems require hot surfaces. These are usually heated using electrical elements located in their vicinity. However, this solution is subject to intrinsic limitations associated with heating element geometry and physical location. Thermally spraying electrical elements directly on surfaces can overcome these limitations by tailoring the geometry of the heating element to the application. Moreover, the element heat transfer is maximized by minimizing the distance between the heater and the surface to be heated. This article is aimed at modeling and characterizing resistive heaters sprayed on metallic substrates. Heaters were fabricated by using a plasma-sprayed alumina dielectric insulator and a wire flame-sprayed iron-based alloy resistive element. Samples were energized and kept at a constant temperature of 425 °C for up to 4 months. SEM cross-sectional observations revealed the formation of cracks at very specific locations in the alumina layer after thermal use. Finite-element modeling shows that these cracks originate from high local thermal stresses and can be predicted according to the considered geometry. The simulation model was refined using experimental parameters obtained by several techniques such as emissivity and time-dependent temperature profile (infra-red camera), resistivity (four-probe technique), thermal diffusivity (laser flash method), and mechanical properties (micro and nanoindentation). The influence of the alumina thickness and the substrate material on crack formation was evaluated.

Influence of Pore Structure on SIP Properties Deduced from Micro-Scale Modelling

NASA Astrophysics Data System (ADS)

Volkmann, Jan; Klitzsch, Norbert; Wiens, Eugen; Mohnke, Oliver

2010-05-01

In geophysics frequency dependent complex resistivity measurements are called Spectral Induced Polarization (SIP). In other fields this method is known as Impedance Spectroscopy. In the last two decades many empirical relations were proposed which relate the frequency dependent electrical properties of water saturated rocks to structural properties such as pore radius and inner surface area, or to hydraulic conductivity. Unfortunately, these relations are not universal; they apply only for specific rock types and water compositions. In order to quantify the influence of inner rock structure (as well as of electrochemical water and rock properties) on the frequency dependent electrical properties we model the charge transport processes at the pore space using Comsol Multiphysics. In the frequency domain the effect of Induced Polarization (IP) is characterised by a phase shift between a measured electric current and an alternating voltage applied to the ground. A possible origin of this behaviour particularly for nonconducting rock minerals can be seen in the membrane polarization model as proposed by Marshall and Madden. This model describes a system of electrolyte filled pores. Different mobilities of cations and anions in the small pores cause a membrane effect and thus an electrical polarization. We aim to find a more realistic way of modelling the membrane polarization effect than using the simple Marshall and Madden model. The electric double layer, the origin of the Induced Polarization effect, is caused by surface charges located at the electrolyte rock interface. Thus, the EDL as a boundary effect is accounted for by reduced ion mobilities at the inner surface area. The governing equations and boundary conditions for a system of larger and smaller pores with applied voltage are expressed in frequency domain using a time harmonic approach, the electric current is determined to obtain information about amplitude and phase of the complex resistivity. The results are compared to corresponding theoretic and experimental results. The model is applied to study the influence of pore sizes and pore structure as well as of electrolyte properties like ion mobilities and concentrations. We find two characteristic phase minima in the frequency range 1mHz - 100MHz. The dependence of the 'high frequency' minimum (f > 10kHz) on the electrolyte concentration and the dependence of the corresponding relaxation times on variations of the pore geometry are in good agreement with the classical Maxwell-Wagner theory. In contrast to this effective medium approach the simulations confirm the necessity of pore throats to obtain non-vanishing phase values. For large size differences of the smaller and larger pores a second 'low frequency' minimum (f < 10kHz) exists. Its relaxation time mainly depends on the length of the large pores of the system. Furthermore we find a decreasing phase amplitude with increasing electrolyte concentration not predicted by Marshall and Madden and similar models but confirmed by experimental results. This study was conducted within the Transregional Collaborative Research Centre 32 (SFB TR 32; subproject A2), funded by the German Research Foundation (DFG). Present and future studies are supported by the Deutsche Gesellschaft für Erdöl, Erdgas und Kohle e.V. (DGMK).