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Sample records for deposited thin films

  1. Biomimetic thin film deposition

    SciTech Connect

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  2. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  3. Mirrorlike pulsed laser deposited tungsten thin film

    SciTech Connect

    Mostako, A. T. T.; Khare, Alika; Rao, C. V. S.

    2011-01-15

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10{sup -5} Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness {approx}782 nm.

  4. Mirrorlike pulsed laser deposited tungsten thin film.

    PubMed

    Mostako, A T T; Rao, C V S; Khare, Alika

    2011-01-01

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10(-5) Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness ∼782 nm. PMID:21280810

  5. Perovskite thin films via atomic layer deposition.

    PubMed

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  6. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  7. Photochemical Deposition of Patterned Gold Thin Films

    NASA Astrophysics Data System (ADS)

    Kumaran, Abbu Udaiyar Senthil; Miyawaki, Tetsuya; Ichimura, Masaya

    2006-12-01

    We present a novel route for patterned gold thin-film deposition on glass substrates with the help of UV-light irradiation. Chloroauric acid (HAuCl4) is used as a source material and sodium sulfite (Na2SO3) acts as a reducing agent in an aqueous solution. Ethylene diamine (EDA) is added to increase the solution stability. The deposition solution is injected on the substrate. A patterned metal mask is placed 5 mm above the substrate, and the solution is illuminated for 15 min by an ultrahigh-pressure mercury arc lamp. A patterned Au film with a thickness of 0.1-0.2 μm is deposited.

  8. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  9. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  10. Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

    SciTech Connect

    Genfa Wu; Anne-Marie Valente; H. Phillips; Haipeng Wang; Andy Wu; T. J. Renk; P Provencio

    2004-05-01

    An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV. The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.

  11. Deposition of thin films of multicomponent materials

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor)

    1993-01-01

    Composite films of multicomponent materials, such as oxides and nitrides, e.g., lead zirconate titanate, are deposited by dc magnetron sputtering, employing a rotating substrate holder, which rotates relative to a plurality of targets, one target for each metal element of the multicomponent material. The sputtering is carried out in a reactive atmosphere. The substrates on which the layers are deposited are at ambient temperature. Following deposition of the composite film, the film is heated to a temperature sufficient to initiate a solid state reaction and form the final product, which is substantially single phase and substantially homogeneous.

  12. Ultrashort pulse laser deposition of thin films

    DOEpatents

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  13. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    NASA Astrophysics Data System (ADS)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  14. Excimer laser deposition of hydroxyapatite thin films.

    PubMed

    Singh, R K; Qian, F; Nagabushnam, V; Damodaran, R; Moudgil, B M

    1994-06-01

    We have demonstrated a new and simple in situ method to fabricate adherent and dense hydroxyapatite (HA) coatings at relatively low deposition temperatures (500-600 degrees C). Under optimum processing conditions, the HA coatings possess a nominal Ca:P ratio of 1.65 and exhibit a fully crystalline single-phase structure. This deposition technique is based on the application of a pulsed excimer laser (wavelength lambda = 248 nm, pulse duration tau = 25 x 10(-9) s) to ablate a dense stoichiometric HA target. The HA target was prepared by standard ceramic coprecipitation techniques followed by cold pressing and further sintering at 1200 degrees C in air. High substrate temperatures (> or = 600 degrees C) during film deposition led to phosphorus deficient coatings because of re-evaporation of phosphorus during the deposition process. The stabilization of various calcium and phosphorus phases in the film was controlled by a number of process parameters such as substrate temperature, chamber pressure and presence of water vapour in the chamber. This is particularly advantageous for production of HA coatings, since it is known that HA decomposes at high temperatures due to the uncertainty in the starting material stoichiometry. Rutherford backscattering spectrometry, energy dispersive X-ray analysis, transmission electron microscopy, scanning electron microscopy and X-ray diffraction techniques were employed to determine the structure-processing relationships. Qualitative scratch measurements were conducted to determine the adhesion strength of the films.

  15. SnS2 Thin Film Deposition by Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Yahia Jaber, Abdallah; Noaiman Alamri, Saleh; Salah Aida, Mohammed

    2012-06-01

    Tin disulfide (SnS2) thin films have been synthesized using a simplified spray pyrolysis technique using a perfume atomizer. The films were deposited using two different solutions prepared by the dilution of SnCl2 and thiourea in distilled water and in methanol. The obtained films have a microcrystalline structure. The film deposited using methanol as the solvent is nearly stochiometric SnS2 with a spinel phase having a (001) preferential orientation. The film prepared with an aqueous solution is Sn-rich. Scanning electronic microscopy (SEM) images reveal that the film deposited with the aqueous solution is rough and is formed with large wires. However, the film deposited with methanol is dense and smooth. Conductivity measurements indicate that the aqueous solution leads to an n-type semiconductor, while methanol leads to a p-type semiconductor.

  16. Pulsed laser deposition of CdWO4 thin films

    NASA Astrophysics Data System (ADS)

    Kodu, M.; Avarmaa, T.; Jaaniso, R.; Leemets, K.; Mändar, H.; Nagirnyi, V.

    2016-10-01

    Thin CdWO4 films were produced on various substrates by pulsed laser deposition. A method of producing transparent films of high structural and optical quality on MgO substrate was developed. It is based on deposition of an amorphous film from a non-stoichiometric CdWO4-CdO target and a consequent crystallization of the film in oxygen atmosphere at 750 °C. The quality of the films produced was verified by x-ray diffraction, electron probe microanalysis, scanning electron microscopy, Raman and optical spectroscopy.

  17. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    NASA Astrophysics Data System (ADS)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  18. Chemical deposition and characterization of copper indium disulphide thin films

    NASA Astrophysics Data System (ADS)

    Pathan, H. M.; Lokhande, C. D.

    2004-12-01

    A simple chemical deposition method was used to prepare copper indium disulphide thin films. The method is based on sequential immersion of substrate into different cationic and anionic precursor solutions and rinsing before every immersion with double distilled water. In the present investigation, CuInS 2 films have been deposited using chemical deposition method. These films were characterized for their structural, surface morphological, compositional and electrical properties by using X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Rutherford back scattering (RBS), electrical resistivity and thermoemf measurement techniques.

  19. Electrochromic lithium nickel oxide thin film by pulsed laser deposition

    SciTech Connect

    Wen, S.J.; Rottkay, K. von; Rubin, M.

    1996-10-01

    * Thin films of lithium nickel oxide were deposited by pulsed laser deposition (PLD) from targets of pressed LiNiO{sub 2} powder with layered structure. The composition, structure and surface air sensitivity of these films were analyzed using a variety of techniques, such as nuclear reaction analysis, Rutherford backscattering spectrometry (RBS), x-ray diffraction, infrared spectroscopy, and atomic force microscopy. Optical properties were measured using a combination of variable angle spectroscopic ellipsometry and IP spectroradiometry. Crystalline structure, surface morphology and chemical composition of Li{sub x}Ni{sub 1-x}O thin films depend strongly on deposition oxygen pressure, temperature as well as substrate target distance. The films produced at temperatures lower than 600 degrees C spontaneously absorb CO{sub 2} and H{sub 2}O at their surface once they are exposed to the air. The films deposited at 600 degrees C proved to be stable in air over a long period. Even when deposited at room temperature the PLD films are denser and more stable than sputtered films. RBS determined that the best electrochromic films had the stoichiometric composition L{sub 0.5}Ni{sub 0.5}O when deposited at 60 mTorr O{sub 2} pressure. Electrochemical tests show that the films exhibit excellent reversibility in the range 1.0 V to 3.4 V versus lithium and long cyclic life stability in a liquid electrolyte half cell. Electrochemical formatting which is used to develop electrochromism in other films and nickel oxide films is not needed for these stoichiometric films. The optical transmission range is almost 70% at 550 nm for 120 nm thick films.

  20. Laser deposition of large-area thin films

    SciTech Connect

    Kuzanyan, A S; Petrosyan, V A; Pilosyan, S Kh; Nesterov, V M

    2011-03-31

    A new method for fabricating large-area thin films of uniform thickness on a rotating substrate is proposed. Its distinctive features are (i) the presence of a diaphragm, partially transmitting the evaporated material, between the target and substrate and (ii) the translatory motion of the rotating substrate with respect to the target at a certain velocity. The method proposed makes it possible to obtain thin films of uniform thickness on substrates with sizes limited by only the deposition chamber size. The method is experimentally verified by depositing thin CuO films on silicon substrates placed over the radius of a disk 300 mm in diameter. The deviation of the film thickness from the average value does not exceed {+-}3% throughout the entire radius, which confirms good prospects of this method for microelectronics, optical industry, and other modern technologies. (laser technology)

  1. Helical structured thin films deposited at a glancing angle

    NASA Astrophysics Data System (ADS)

    Jen, Yi-Jun; Jheng, Ci-Yao; Chan, San; Tseng, Chien-Hoa

    2015-08-01

    Gold nanohelical structured thin films (NHFs) were tried to be deposited on a glass substrate using glancing angle deposition technique. At a deposition angle of 89°, gold NHFs were fabricated by introducing liquid nitrogen to flow under the backside of BK7 glass substrate holder. The temperature of substrate was reduced to be less than -140°C before deposition. The spin rate was controlled with respect to the deposition rate to grow three different sized nanohelices. The morphology and optical properties of Au NHFs were measured and compared between the three samples. The strong g-factor implies high sensitivity of deposited helixes in biosensing in the future.

  2. Measuring Thicknesses Of Vacuum-Deposited Organic Thin Films

    NASA Technical Reports Server (NTRS)

    David, Carey E.

    1996-01-01

    Method of measuring thickness of thin organic liquid film deposited in vacuum involves use of quartz-crystal monitor (QCM) calibrated by use of witness plate that has, in turn, calibrated by measurement of absorption of infrared light in deposited material. Present procedure somewhat tedious, but once calibration accomplished, thicknesses of organic liquid deposits monitored in real time and in situ by use of QCM.

  3. Atomic layer deposition of MoS2 thin films

    NASA Astrophysics Data System (ADS)

    Browning, Robert; Padigi, Prasanna; Solanki, Raj; Tweet, Douglas J.; Schuele, Paul; Evans, David

    2015-03-01

    Atomic layer deposition (ALD) was used to grow thin films of MoS2 over 5 × 5 cm areas of silicon oxide coated silicon wafers. Smooth, uniform, and continuous films were produced over a temperature range of 350 °C-450 °C. The as-grown films were analyzed using x-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence, and x-ray diffraction. Electrical characteristics of the films were evaluated by fabricating a back gated field effect transistor. These analyses indicate that ALD technique can produce large area, high quality MoS2 films.

  4. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  5. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  6. Pulsed laser deposition of ITO thin films and their characteristics

    SciTech Connect

    Zuev, D. A. Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

    2012-03-15

    The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 Multiplication-Sign 10{sup -4} {Omega} cm has been achieved in the ITO films with content of Sn 5 at %.

  7. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  8. Substrates suitable for deposition of superconducting thin films

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1993-01-01

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  9. Sputter deposited Terfenol-D thin films for multiferroic applications

    NASA Astrophysics Data System (ADS)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  10. Pulsed laser deposition of anatase thin films on textile substrates

    NASA Astrophysics Data System (ADS)

    Krämer, André; Kunz, Clemens; Gräf, Stephan; Müller, Frank A.

    2015-10-01

    Pulsed laser deposition (PLD) is a highly versatile tool to prepare functional thin film coatings. In our study we utilised a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a laser wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW to deposit crystalline anatase thin films on carbon fibre fabrics. For this purpose, preparatory experiments were performed on silicon substrates to optimise the anatase deposition conditions including the influence of different substrate temperatures and oxygen partial pressures. Processing parameters were then transferred to deposit anatase on carbon fibres. Scanning electron microscopy, X-ray diffraction analyses, Raman spectroscopy and tactile profilometry were used to characterise the samples and to reveal the formation of phase pure anatase without the occurrence of a secondary rutile phase. Methanol conversion test were used to prove the photocatalytic activity of the coated carbon fibres.

  11. Modified chemical route for deposition of molybdenum disulphide thin films

    SciTech Connect

    Vyas, Akshay N. Sartale, S. D.

    2014-04-24

    Molybdenum disulphide (MoS{sub 2}) thin films were deposited on quartz substrates using a modified chemical route. Sodium molybdate and sodium sulphide were used as precursors for molybdenum and sulphur respectively. The route involves formation of tetrathiomolybdate ions (MoS{sub 4}{sup 2−}) and further reduction by sodium borohydride to form MoS{sub 2}. The deposition was performed at room temperature. The deposited films were annealed in argon atmosphere at 1073 K for 1 hour to improve its crystallinity. The deposited films were characterized using scanning electron microscopy (SEM) for morphology, UV-Vis absorption spectroscopy for optical studies and X-ray diffraction (XRD) for structure determination.

  12. Deposition of Thin Film Using a Surface Acoustic Wave Device

    NASA Astrophysics Data System (ADS)

    Murochi, Nobuaki; Sugimoto, Mitsunori; Matsui, Yoshikazu; Kondoh, Jun

    2007-07-01

    When a Rayleigh surface acoustic wave (SAW) propagates at a liquid/solid interface, it radiates its energy into the adjacent liquid. If a liquid droplet is loaded on the SAW propagation surface, droplet vibration, streaming, jetting, and atomization are observed. These phenomena are called SAW streaming. In this paper, a novel thin-film deposition method based on the atomization of SAW streaming phenomena is proposed. The liquid with film material is loaded on the SAW propagation surface and the liquid is atomized. The atomization direction depends on the Rayleigh angle, which is determined by the sound velocity in the liquid and the SAW velocity. For easy fabrication of a thin uniform film, the atomization direction is controlled in the perpendicular direction. Using the developed system, the deposition of pigments in ink is carried out. The results observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) indicate that a pigment layer is formed on a glass plate.

  13. Chemical vapor deposition and characterization of titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  14. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOEpatents

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  15. Properties of zirconia thin films deposited by laser ablation

    SciTech Connect

    Cancea, V. N.; Filipescu, M.; Colceag, D.; Dinescu, M.; Mustaciosu, C.

    2013-11-13

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup −2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  16. X-ray reflectivity measurements of vacuum deposited thin films

    SciTech Connect

    Chason, M.; Chason, E.

    1992-12-31

    X-ray reflectivity using energy dispersive X-ray detection, a nondestructive probe of surface roughness over the region of {approximately} 1--50 {Angstrom}, has been used to investigate the characteristicsof vacuum deposited thin films. With a surface roughness sensitivity better than 1 {Angstrom} X-ray reflectivity is sensitive to interfaces between different materials for sample thicknesses up to approximately2000 {Angstrom} (depending on material density). We have investigated discrete Cr/Al deposits on quartz substrates and determined the surface roughness at the interfaces. We have also monitored the evolution ofthe Cr/Al interface following annealing. The experimental data is presented and discussed. The use of the technique for studying thin film deposits is addressed.

  17. X-ray reflectivity measurements of vacuum deposited thin films

    SciTech Connect

    Chason, M. ); Chason, E. )

    1992-01-01

    X-ray reflectivity using energy dispersive X-ray detection, a nondestructive probe of surface roughness over the region of [approximately] 1--50 [Angstrom], has been used to investigate the characteristicsof vacuum deposited thin films. With a surface roughness sensitivity better than 1 [Angstrom] X-ray reflectivity is sensitive to interfaces between different materials for sample thicknesses up to approximately2000 [Angstrom] (depending on material density). We have investigated discrete Cr/Al deposits on quartz substrates and determined the surface roughness at the interfaces. We have also monitored the evolution ofthe Cr/Al interface following annealing. The experimental data is presented and discussed. The use of the technique for studying thin film deposits is addressed.

  18. Thin Film Nanomorphology Tailored by Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Suzuki, Motofumi

    Shadowing growth by glancing angle deposition (GLAD) has been providing self-assembled nanostructures over much larger area for much lower costs since much earlier than the recent advanced top down processes do. In these two decades, significant progress has been made in the development of the well-controlled 3D nanomorphologies such as zigzag and helix. Much effort for theoretical and numerical understanding of the growth mechanism has been also paid in order to improve the morphology. Many researches in academia have been investigating useful properties of nanocolumnar thin films in their laboratory. On the other hand, most companies seem hesitate to introduce GLAD technique into the factory due to the prejudice that the obliquely deposited thin films are not durable and reproducible. In this article, we discuss the progress in glancing angle deposition technology for the practical applications.

  19. Liquid phase deposition synthesis of hexagonal molybdenum trioxide thin films

    SciTech Connect

    Deki, Shigehito; Beleke, Alexis Bienvenu; Kotani, Yuki; Mizuhata, Minoru

    2009-09-15

    Hexagonal molybdenum trioxide thin films with good crystallinity and high purity have been fabricated by the liquid phase deposition (LPD) technique using molybdic acid (H{sub 2}MoO{sub 4}) dissolved in 2.82% hydrofluoric acid (HF) and H{sub 3}BO{sub 3} as precursors. The crystal was found to belong to a hexagonal hydrate system MoO{sub 3}.nH{sub 2}O (napprox0.56). The unit cell lattice parameters are a=10.651 A, c=3.725 A and V=365.997 A{sup 3}. Scanning electron microscope (SEM) images of the as-deposited samples showed well-shaped hexagonal rods nuclei that grew and where the amount increased with increase in reaction time. X-ray photon electron spectroscopy (XPS) spectra showed a Gaussian shape of the doublet of Mo 3d core level, indicating the presence of Mo{sup 6+} oxidation state in the deposited films. The deposited films exhibited an electrochromic behavior by lithium intercalation and deintercalation, which resulted in coloration and bleaching of the film. Upon dehydration at about 450 deg. C, the hexagonal MoO{sub 3}.nH{sub 2}O was transformed into the thermodynamically stable orthorhombic phase. - Abstract: SEM photograph of typical h-MoO{sub 3}.nH{sub 2}O thin film nuclei obtained after 36 h at 40 deg. C by the LPD method. Display Omitted

  20. Deposition and investigation of lanthanum-cerium hexaboride thin films

    SciTech Connect

    Kuzanyan, A.S. . E-mail: akuzan@ipr.sci.am; Harutyunyan, S.R.; Vardanyan, V.O.; Badalyan, G.R.; Petrosyan, V.A.; Kuzanyan, V.S.; Petrosyan, S.I.; Karapetyan, V.E.; Wood, K.S.; Wu, H.-D.

    2006-09-15

    Thin films of lanthanum-cerium hexaboride, the promising thermoelectric material for low-temperature applications, are deposited on various substrates by the electron-beam evaporation, pulsed laser deposition and magnetron sputtering. The influence of the deposition conditions on the films X-ray characteristics, composition, microstructure and physical properties, such as the resistivity and Seebeck coefficient, is studied. The preferred (100) orientation of all films is obtained from XRD traces. In the range of 780-800 deg. C deposition temperature the highest intensity of diffractions peaks and the highest degree of the preferred orientation are observed. The temperature dependence of the resistivity and the Seebeck coefficient of films are investigated in the temperature range of 4-300 K. The features appropriate to Kondo effect in the dependences {rho}(T) and S(T) are detected at temperatures below 20 K. Interplay between the value of the Seebeck coefficient, metallic parameters and Kondo scattering of investigated films is discussed. - Graphical abstract: Kondo scattering in (La,Ce)B{sub 6} films: temperature dependence of the resistivity of (La,Ce)B{sub 6} films on various substrates and the ceramics La{sub 0.99}Ce{sub 0.01}B{sub 6}.

  1. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H{sub 2}/Ar at 400 °C, the as-grown α−Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  2. Pulsed laser deposition and characterizations of pyrochlore iridate thin films

    NASA Astrophysics Data System (ADS)

    Starr, Matthew; Aviles-Acosta, Jaime; Xie, Yuantao; Zhu, Wenka; Li, Zhen; Chen, Aiping; Li, Nan; Tao, Chenggang; Jia, Quanxi; Heremans, J. J.; Zhang, S. X.

    Pyrochlore iridates have attracted growing interest in recent years because of their potential to realize novel topological phases. While most of the previous studies have focused on polycrystalline and single crystalline bulk samples, epitaxial thin films offer a unique platform for controllable tuning of material parameters such as oxygen stoichiometry and elastic strain to achieve new electronic states. In this talk, we will present the growth and characterizations of epitaxial thin films of pyrochlore Y2Ir2O7 and Bi2Ir2O7 that are predicted to host topologically non-trivial states. The iridate thin films were grown by pulsed laser deposition at different conditions, and a narrow window for epitaxial growth was determined. Characterizations of crystalline structures were performed using X-ray diffraction and transmission electron microscopy to establish a growth parameter-structure phase diagram. The compositions of thin films were determined by energy dispersive X-ray spectroscopy, and the surface morphologies were characterized using atomic force microscopy and scanning tunneling microscopy. Magneto-transport studies indicate a strong dependence of transport properties on the oxygen stoichiometry and the film thickness.

  3. Formation of ultrasmooth thin silver films by pulsed laser deposition

    SciTech Connect

    Kuznetsov, I. A.; Garaeva, M. Ya.; Mamichev, D. A. Grishchenko, Yu. V.; Zanaveskin, M. L.

    2013-09-15

    Ultrasmooth thin silver films have been formed on a quartz substrate with a buffer yttrium oxide layer by pulsed laser deposition. The dependence of the surface morphology of the film on the gas (N{sub 2}) pressure in the working chamber and laser pulse energy is investigated. It is found that the conditions of film growth are optimal at a gas pressure of 10{sup -2} Torr and lowest pulse energy. The silver films formed under these conditions on a quartz substrate with an initial surface roughness of 0.3 nm had a surface roughness of 0.36 nm. These films can be used as a basis for various optoelectronics and nanoplasmonics elements.

  4. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  5. Pulsed laser deposition and characterization of cellulase thin films

    NASA Astrophysics Data System (ADS)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  6. Development of a Co-deposition method for Deposition of Low-Contamination Pyrite Thin Films

    NASA Astrophysics Data System (ADS)

    Walimbe, Aditya

    Pyrite is a 0.95 eV bandgap semiconductor which is purported to have great potential in widespread, low--cost photovoltaic cells. A thorough material selection process was used in the design of a pyrite sequential vapor deposition chamber aimed at reducing and possibly eliminating contamination during thin film growth. The design process focused on identifying materials that do not produce volatile components when exposed to high temperatures and high sulfur pressures. Once the materials were identified and design was completed, the ultra--high vacuum growth system was constructed and tested. Pyrite thin films were deposited using the upgraded sequential vapor deposition chamber by varying the substrate temperature from 250°C to 420°C during deposition, keeping sulfur pressure constant at 1 Torr. Secondary Ion Mass Spectrometry (SIMS) results showed that all contaminants in the films were reduced in concentration by orders of magnitude from those grown with the previous system. Characterization techniques of Rutherford Back--scattering Spectrometry (RBS), X--Ray Diffraction (XRD), Raman Spectroscopy, Optical Profilometry and UV/Vis/Near--IR Spectroscopy were performed on the deposited thin films. The results indicate that stoichiometric ratio of S:Fe, structural--quality (epitaxy), optical roughness and percentage of pyrite in the deposited thin films improve with increase in deposition temperature. A Tauc plot of the optical measurements indicates that the pyrite thin films have a bandgap of 0.94 eV.

  7. Combinatorial thin film composition mapping using three dimensional deposition profiles

    NASA Astrophysics Data System (ADS)

    Suram, Santosh K.; Zhou, Lan; Becerra-Stasiewicz, Natalie; Kan, Kevin; Jones, Ryan J. R.; Kendrick, Brian M.; Gregoire, John M.

    2015-03-01

    Many next-generation technologies are limited by material performance, leading to increased interest in the discovery of advanced materials using combinatorial synthesis, characterization, and screening. Several combinatorial synthesis techniques, such as solution based methods, advanced manufacturing, and physical vapor deposition, are currently being employed for various applications. In particular, combinatorial magnetron sputtering is a versatile technique that provides synthesis of high-quality thin film composition libraries. Spatially addressing the composition of these thin films generally requires elemental quantification measurements using techniques such as energy-dispersive X-ray spectroscopy or X-ray fluorescence spectroscopy. Since these measurements are performed ex-situ and post-deposition, they are unable to provide real-time design of experiments, a capability that is required for rapid synthesis of a specific composition library. By using three quartz crystal monitors attached to a stage with translational and rotational degrees of freedom, we measure three-dimensional deposition profiles of deposition sources whose tilt with respect to the substrate is robotically controlled. We exhibit the utility of deposition profiles and tilt control to optimize the deposition geometry for specific combinatorial synthesis experiments.

  8. Deposition and characterization of aluminum magnesium boride thin film coatings

    NASA Astrophysics Data System (ADS)

    Tian, Yun

    Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness

  9. Novel solutions for thin film layer deposition for organic materials

    NASA Astrophysics Data System (ADS)

    Keiper, Dietmar; Long, Michael; Schwambera, Markus; Gersdorff, Markus; Kreis, Juergen; Heuken, Michael

    2011-03-01

    Innovative systems for carrier-gas enhanced vapor phase deposition of organic layers offer advanced methods for the precise deposition of complex thin-film layer stacks. The approach inherently avoids potential short-comings from solvent-based polymer deposition and offers new opportunities. The process operates at low pressure (thus avoiding complex vacuum setups), and, by employing AIXTRON's extensive experience in freely scalable solutions, can be adapted to virtually any production process and allows for R&D and production systems alike. Deposition of organic layers and stacks recommends the approach for a wide range of organic small molecule and polymer materials (including layers with gradual change of the composition), for conductive layers, for dielectric layers, for barrier systems, for OLED materials, and surface treatments such as oleophobic / hydrophobic coatings. With the combination of other vapor phase deposition solutions, hybrid systems combining organic and inorganic materials and other advanced stacks can be realized.

  10. Studies on atomic layer deposition of IRMOF-8 thin films

    SciTech Connect

    Salmi, Leo D. Heikkilä, Mikko J.; Vehkamäki, Marko; Puukilainen, Esa; Ritala, Mikko; Sajavaara, Timo

    2015-01-15

    Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd){sub 2} (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

  11. Photonic crystal engineering in glancing angle deposition thin films

    NASA Astrophysics Data System (ADS)

    Jensen, Hans Martin Overgaard

    2005-11-01

    From living rooms to operating rooms, our world is becoming dependent on information technology. For half a century a transformation in computing and communications has been borne by semiconductor microelectronics, but to serve us tomorrow, new materials transcending the performance and cost of current technology must be developed. An emerging optical material is the photonic bandgap crystal, which so fundamentally manipulates the emission and propagation of light that photons may be harnessed to eclipse what electronics accomplish today. However, the crystals consist of intricate, sub micrometre structures that are complex to fabricate, and even harder to engineer for technological applications. Indeed, fabrication challenges have inhibited photonic crystal progress. This thesis responds by enabling photonic crystal engineering through a chiral thin film fabrication technique known as glancing angle deposition. By oblique vapour deposition onto rotating substrates, the approach creates tetragonal lattices of square spirals with widths of a few hundred nanometres, predicted to yield strong photonic bandgaps at useful optical wavelengths. Within the scope of the thesis research, high resolution, high density direct write lithography is developed to deliver large area crystal substrates with extensive design freedom. The evolution of square spiral photonic crystal thin films on such substrates is analyzed, and new deposition methods are devised to allow engineering of the photonic bandgap by reducing the dimensions and enhancing the fine structure of the square spirals. Optical characterization is performed to evaluate the presence of a complete, three dimensional photonic bandgap, confirm an engineered bandgap at 1.65 mum, and quantify the improvement in crystal quality to a bandgap width of 10.9%. With a potential for use as photonic waveguides, the engineering of embedded, functional air and dielectric defects is also established. Furthermore, the thesis develops

  12. YBCO thin film evaporation on as-deposited silver film on MgO

    NASA Astrophysics Data System (ADS)

    Azoulay, J.

    1999-11-01

    YBa 2Cu 3O 7- δ (YBCO) thin film was evaporated on as-deposited Ag buffer layer on MgO substrate. A simple, inexpensive vacuum system equipped with one resistively heated source was used. The subsequent heat treatment was carried out under low oxygen partial pressure at a relatively low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using DC four-probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). It is shown that YBCO thin film can grow on as-deposited thin silver layer on MgO substrate.

  13. Spatial atomic layer deposition of zinc oxide thin films.

    PubMed

    Illiberi, A; Roozeboom, F; Poodt, P

    2012-01-01

    Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and morphology), and optical properties of the films have been analyzed by using Hall, four-point probe, X-ray diffraction, scanning electron microscopy, spectrophotometry, and photoluminescence, respectively. All the films have c-axis (100) preferential orientation, good crystalline quality and high transparency (∼ 85%) in the visible range. By varying the DEZ partial pressure, the electrical properties of ZnO can be controlled, ranging from heavily n-type conductive (with 4 mOhm.cm resistivity for 250 nm thickness) to insulating. Combining the high deposition rates with a precise control of functional properties (i.e., conductivity and transparency) of the films, the industrially scalable spatial ALD technique can become a disruptive manufacturing method for the ZnO-based industry.

  14. Biomimetic lithography and deposition kinetics of iron oxyhydroxide thin films

    SciTech Connect

    Rieke, P.C.; Wood, L.L.; Marsh, B.M.; Fryxell, G.E.; Engelhard, M.H.; Baer, D.R.; Tarasevich, B.J. |; John, C.M.

    1993-12-01

    Heterogeneous nucleation and crystal growth on functionalized organic substrates is a critical step in biological hard tissue formation. Self assembled monolayers can be derivatized with various organic functional groups to mimic the ``nucleation proteins`` for induction of mineral growth. Studies of nucleation and growth on SAMs can provide a better understanding of biomineralization and can also form the basis of a superior thin film deposition process. We demonstrate that micron-scale, electron and ion beam, lithographic techniques can be used to pattern SAMs with functional organic groups that either inhibit or promote mineral deposition. Patterned films of iron oxyhydroxide were deposited on the areas patterned with nucleation sites. Studies of the deposition kinetic of these films show that indeed the surface induces heterogeneous nucleation and that film formation does not occur via absorption of polymers or colloidal material formed homogeneously in solution. The nucleus interfacial free energy was calculated to be 24 mJ/m2 on a SAM surface composed entirely of sulfonate groups.

  15. Femtosecond pulsed laser deposition of amorphous, ultrahard boride thin films

    NASA Astrophysics Data System (ADS)

    Stock, Michael; Molian, Pal

    2004-05-01

    Amorphous thin films (300-500 nm) of ultrahard AlMgB10 with oxygen and carbon impurities were grown on Si (100) substrates at 300 K using a solid target of AlMgB14 containing a spinel phase (MgAl2O4) and using a 120 fs pulsed, 800 nm wavelength Ti:sapphire laser. The films were subsequently annealed in argon gas up to 1373 K for 2 h. Scanning electron microscopy (SEM) was used to examine the particulate formation, atomic force microscopy was employed to characterize the film surface topography, x-ray diffraction and transmission electron microscopy were used to determine the microstructure, x-ray photoelectron spectroscopy was performed to examine the film composition, and nanoindentation was employed to study the hardness of thin films. The as-deposited and postannealed films (up to 1273 K) had a stochiometry of AlMgB10 with a significant amount of oxygen and carbon impurities and exhibited amorphous structures for a maximum hardness of 40+/-3 GPa. However, postannealing at higher temperatures led to crystallization and transformation of the film to SiB6 with a substantial loss in hardness. Results are also compared with our previous study on 23 ns, 248 nm wavelength (KrF excimer) pulsed laser deposition of AlMgB14 reported in this journal [Y. Tian, A. Constant, C. C. H. Lo, J. W. Anderegg, A. M. Russell, J. E. Snyder, and P. A. Molian, J. Vac. Sci. Technol. A 21, 1055 (2003)]. .

  16. Pulsed Nd:YAG laser deposition of ruthenium thin films

    NASA Astrophysics Data System (ADS)

    Wai Keat, Lee

    the Ru films were examined. Decreasing trend of resistivity was observed on the deposited Ru film with film thickness below 100 nm, while the increasing trend was observed above 100 nm Ru film. The lowest resistivity of the Ru thin film was found to be around 33 muO-cm. Droplets formation was detected on the surface of the Ru film through scanning electron microscopy (SEM) images. It was attributed to the effect of laser fluence modification on the Ru target surface during the deposition. The amount of droplets increased significantly above 4 J/cm 2. In this research work, the experimental threshold laser fluence is found to be around 4 J/cm2 where prominent observations such as increasing Ru I species and increasing droplets were obtained above this threshold. It is correlated well to the calculated theoretical threshold laser fluence which states that significant material removal and luminous plasma plume are expected.

  17. thin films by an hybrid deposition configuration: pulsed laser deposition and thermal evaporation

    NASA Astrophysics Data System (ADS)

    Escobar-Alarcón, L.; Solís-Casados, D. A.; Perez-Alvarez, J.; Romero, S.; Morales-Mendez, J. G.; Haro-Poniatowski, E.

    2014-10-01

    The aim of this work was to report the application of an hybrid deposition configuration to deposit Titanium dioxide (TiO2) thin films modified with different amounts of bismuth (Bi:TiO2). The samples were synthesized combining a TiO2 laser ablation plasma with a flux of vapor of bismuth produced by thermal evaporation. By varying the deposition rate of Bi it was possible to control the amount of Bi incorporated in the film and consequently the film properties. A detailed compositional, structural, and optical characterization by XPS, RBS, Raman spectroscopy, and UV-Vis spectrometry techniques is discussed. Photocatalytic response of the deposited thin films was studied through the degradation of a malachite green solution.

  18. Superhydrophobicity of polytetrafluoroethylene thin film fabricated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kwong, H. Y.; Wong, M. H.; Wong, Y. W.; Wong, K. H.

    2007-09-01

    Superhydrophobic polytetrafluoroethylene (PTFE) thin films were obtained by pulsed laser deposition (PLD) technique carried out with KrF excimer laser ( λ = 248 nm) of about 1 J/cm 2 at a pressure of 1.33 Pa. The samples exhibit high water contact angle of about 170° and the sliding angle smaller than 2°. From studying the surface morphology of the prepared films, it is believed that the nano-scale surface roughness has enhanced the hydrophobic property of the PTFE. The increase of trapping air and reducing liquid-solid contact area due to the rough surface, as suggested by the Cassie-Baxter's model, should be responsible for superhydrophobicity of the PLD prepared films. This study thus provides a convenient one-step method without using wet-process to produce a superhydrophobic surface with good self-cleaning properties.

  19. Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Duta, L.; Oktar, F. N.; Stan, G. E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I. N.

    2013-01-01

    We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical-chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

  20. Structural, morphological, optical and photoluminescent properties of spray-deposited ZnSe thin film

    NASA Astrophysics Data System (ADS)

    Lohar, G. M.; Shinde, S. K.; Fulari, V. J.

    2014-11-01

    ZnSe thin films are successfully deposited by spray pyrolysis deposition technique. Deposited thin films are characterized by X-ray diffraction study, and it reveals that spray-deposited ZnSe thin films are polycrystalline with hexagonal crystal structure. Surface morphology is carried out by scanning electron microscopy. It shows cotton-like morphology, and optical properties, such as absorbance, transmittance, reflectance, band gap, refractive index, extinction coefficient are studied. Photoluminescence shows strong emission at 497 nm. Also, spray-deposited ZnSe thin films are hydrophilic in nature, which is shown by contact angle meter.

  1. Influence of POST Annealing on Sol-Gel Deposited ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Bhadane, Hemalata; Samuel, Edmund; Gautam, Dinesh Kumar

    2014-05-01

    The effect of annealing temperature on sol-gel deposited ZnO thin films have been studied. The average crystallite size determined from XRD shows that the deposited films are nanocrystalline. FTIR confirms deposition of ZnO thin films. The transmittance of annealed ZnO thin films is greater than 80% in visible region with bandgap ranging from 3.25-3.19 eV. The films annealed at 450°C temperature shows lower resistivity value of 527.241 Ωm. The deposited nanocrystalline films are suitable for biosensing applications due to its higher surface area.

  2. The Effect of Deposition Temperature to Photoconductivity Properties of Amorphous Carbon Thin Films Deposited By Thermal CVD

    NASA Astrophysics Data System (ADS)

    Mohamad, F.; Suriani, A. B.; Noor, U. M.; Rusop, M.

    2010-07-01

    Amorphous carbon (a-C) thin films were deposited by thermal chemical vapor deposition (CVD) using camphor oil on quartz substrates. The photoconductivity and optical properties of the thin films were studied with varying the deposition temperatures ranging from 650 to 900 °C. The film deposited at 750 °C shows large photoconductivity compare to other films. The optical characterization shows that the optical band gap of the thin films decreased from 0.65 to ˜0.0eV with increasing the deposition temperature due to the increase of sp2 bonded carbon configuration. The electrical conductivity of the thin films grown at higher temperature is much higher compared with the thin films deposited at low temperature.

  3. Pulsed laser deposition of organic semiconductor rubrene thin films

    NASA Astrophysics Data System (ADS)

    Grochowska, K.; Majumdar, S.; Laukkanen, P.; Majumdar, H. S.; Sawczak, M.; Śliwiński, G.

    2015-01-01

    Pulsed Laser Deposition (PLD) technique is applied to produce organic semiconductor (OS) rubrene thin film for spintronics applications. The use of organic material for spintronics is motivated by the advantages such as long spin diffusion length due to low spin-orbit and hyperfine coupling1,2, chemical tuning of electronic functionality, easy structural modifications, ability of self-assembly and mechanical flexibility3 etc. However, a major drawback of OS is its low mobility compared to inorganic semiconductors. The PLD growth of rubrene aims on fabricating OS films under more controlled environment to achieve higher crystalline order to improve its mobility and spin coherence length. Among organic materials, rubrene reveals the highest hole mobility - up to 40 cm2/(V•s) and can be exploited in organic light-emitting diodes (OLEDs) or field-effect transistors (OFETs) 4. In this work the rubrene thin films are produced from hardened pellets in vacuum using Nd:YAG pulsed laser operated at 1064 nm, 2 Hz and energy fluence around 0.2 J/cm2. For the reference rubrene samples on SiO2 glass the AFM data reveal continuous 5-7 nm thick films. The amorphous structures are confirmed by XRD measurements and also Raman spectra which show signatures of both tetracene and phenyl bands and a broadband at 1373 cm-1. The obtained results indicate that continuous, defect-free rubrene films can be prepared by means of PLD for investigation of the spin polarization properties of organic-inorganic hybrids. Further studies are on the way to improve crystalline qualities of the rubrene films for less grain boundary related defects and improved mobility and spin diffusion length.

  4. Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Harjuoja, Jenni; Väyrynen, Samuli; Putkonen, Matti; Niinistö, Lauri; Rauhala, Eero

    2006-01-01

    Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition (ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi atomic ratio in bismuth silicate thin films. The crystallization of compounds formed in the Bi 2O 3-SiO 2 and Bi 2O 3-TiO 2 systems was investigated. Control of the stoichiometry of Bi-Si-O thin films was studied when deposited on Si(1 0 0) and crystallization was studied for films on sapphire and MgO-, ZrO 2- and YSZ-buffered Si(1 0 0). The Bi-Ti-O thin films were deposited on Si(1 0 0) substrate. Both Bi-Si-O and Bi-Ti-O thin films were amorphous after deposition. Highly a-axis oriented Bi 2SiO 5 thin films were obtained when the Bi-Si-O thin films deposited on MgO-buffered Si(1 0 0) were annealed at 800 °C in nitrogen. The full-width half-maximum values for 200 peak were also studied. An excess of bismuth was found to improve the crystallization of Bi-Ti-O thin films and the best crystallinity was observed with Ti/Bi atomic ratio of 0.28 for films annealed at nitrogen at 1000 °C. Roughness of the thin films as well as the concentration depth distribution were also examined.

  5. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

    PubMed Central

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

  6. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

    PubMed

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

  7. Sputter-Deposited AlTiO Thin Films for Semi-Transparent Silicon Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Yun; Bang, Ki Su; Lim, Jung Wook

    2014-09-01

    This paper reports on sputter-deposited AlTiO (ATO) thin films and their effects on the performance of semi-transparent silicon thin film solar cells. The electrical resistivity and the transparency of the ATO films depend significantly on the flow ratio of oxygen to argon during the reactive sputtering process. With highly transparent ATO films, transmittances of over 80% were obtained by increasing this flow ratio. When the ATO films were used on silicon substrates, they exhibited an anti-reflection property, where the minimum reflectance at visible light wavelength was decreased to 1.2%. The introduction of ATO thin film layers into solar cells resulted in a 24% increase in transmittance at wavelengths of around 700 nm, due to the film's anti-reflection characteristic. In addition, the color of the cells changed from green to bright red as the ATO layers were adopted. These beneficial effects of the sputter-deposited ATO films suggest an effective pathway towards the semi-transparent silicon thin film solar cells for building-integrated photovoltaic system applications.

  8. Deposition of Nanostructured Thin Film from Size-Classified Nanoparticles

    NASA Technical Reports Server (NTRS)

    Camata, Renato P.; Cunningham, Nicholas C.; Seol, Kwang Soo; Okada, Yoshiki; Takeuchi, Kazuo

    2003-01-01

    Materials comprising nanometer-sized grains (approximately 1_50 nm) exhibit properties dramatically different from those of their homogeneous and uniform counterparts. These properties vary with size, shape, and composition of nanoscale grains. Thus, nanoparticles may be used as building blocks to engineer tailor-made artificial materials with desired properties, such as non-linear optical absorption, tunable light emission, charge-storage behavior, selective catalytic activity, and countless other characteristics. This bottom-up engineering approach requires exquisite control over nanoparticle size, shape, and composition. We describe the design and characterization of an aerosol system conceived for the deposition of size classified nanoparticles whose performance is consistent with these strict demands. A nanoparticle aerosol is generated by laser ablation and sorted according to size using a differential mobility analyzer. Nanoparticles within a chosen window of sizes (e.g., (8.0 plus or minus 0.6) nm) are deposited electrostatically on a surface forming a film of the desired material. The system allows the assembly and engineering of thin films using size-classified nanoparticles as building blocks.

  9. Smoothening in thin-film deposition on rough substrates.

    PubMed

    de Assis, T A; Reis, F D A Aarão

    2015-11-01

    The evolution of the surface roughness W of a thin film deposited on a rough substrate is studied with a model of temperature-activated adatom diffusion, irreversible lateral aggregation, and no step energy barrier, in which the main parameter is the ratio R of diffusion and deposition rates. At sufficiently low temperatures (R≲10), the average number of adatom steps after adsorption is very small, thus W monotonically increases with time t due to an approximately uncorrelated deposition at short times. If the temperature is not very low (R∼10(3) or larger), smoothening occurs at short times and the Villain-Lai-Das Sarma (VLDS) growth equation governs the long time roughening, which is attained after a crossover time t(c) that increases with the correlation length ξ(i) of the substrate. Scaling arguments predict the dependence of t(c) on temperature and on the substrate production time and the scaling relation for the difference between the roughness of films deposited on rough and flat substrates, in good agreement with numerical results. The effect of temperature is not a direct extension of previous results on flat substrates because the short wavelength fluctuations delay the formation of terraces. For this reason, the effective energy obtained from the dependence of t(c) on R is 40% of the energy of activated adatom diffusion. A scaling law for the initial smoothening is proposed as W/W(i)=Ψ(t/t(c1)), with a crossover time t(c1)≡R(-θ)ξ(i)(z), where W(i) is the substrate roughness, θ≈0.4, and z is the VLDS dynamical exponent. It provides good data collapse if W is not very small and is suggested to be tested experimentally. PMID:26651710

  10. Thin-film deposition and characterization for neutron detection applications

    NASA Astrophysics Data System (ADS)

    Misiano, C.; Trucchi, D. M.; Renzelli, M.; Bemporad, E.; Santoni, A.; Pietropaolo, A.; Vannozzi, A.; Celentano, G.

    2015-10-01

    Solid state physics experimental techniques and characterization tools can provide a valuable contribution to the research and development activity on He-free neutron detection systems, for both detector assessment and performance improvement. Presently, a He replacement strategy relies on the use of 6Li - and/or 10B -based neutron-to-charged particle converters coupled to radiation detectors (solid state, gaseous and scintillators). These topics have been discussed during a devoted session within the HeRe (He- Replacement) in Italy Workshop held in Frascati at the ENEA Research Centre, and this paper aims at presenting a brief overview on possible deposition and characterization techniques of thin films that have been subject of discussion.

  11. Molecular dynamics simulation about porous thin-film growth in secondary deposition

    NASA Astrophysics Data System (ADS)

    Chen, Huawei; Tieu, A. Kiet; Liu, Qiang; Hagiwara, Ichiro; Lu, Cheng

    2007-07-01

    The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.

  12. Formation Of Silicon-Based Heterostructures In Multichamber Integrated-Processing Thin-Film Deposition Systems

    NASA Astrophysics Data System (ADS)

    Lucovsky, Gerald; Kim, Sang S.; Tsu, David V.; Parsons, Gregory N.; Fitch, J. T.

    1990-02-01

    This paper describes the formation of heterostructure devices using multichamber, integrated-processing thin-film deposition systems with UHV-compatible inter-chamber transfer. We describe the application of remote plasma-enhanced chemical-vapor deposition (Remote PECVD) for deposition of semiconducting and dielectric thin films in representative device structures. Special attention is directed to: i) deposition conditions necessary for control of thin-film and interface chemistry; and ii) post-deposition-annealing for the stabilization of physical and electronic properties of the heterostructures, including the interfaces between the constituent layers.

  13. Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions

    NASA Astrophysics Data System (ADS)

    Jafferis, Noah T.; Sturm, James C.

    2012-03-01

    We report the formation of smooth and processable silicon thin-films from single-crystal silicon-nanoparticle suspensions. Single-crystal Si-nanoparticles (1-4 nm) are produced and suspended in various solvents. Films deposited from the suspension are mechanically stable and can be patterned and processed upon deposition. Physical compression of the films is presented as a mechanism to reduce porosity and global roughness. These thin-films, ˜100 nm thick and deposited from a single droplet, contain significant levels of hydrogen, carbon, and oxygen. Resistivities of the as-deposited films are ˜7.107 Ω.cm—comparable to intrinsic nanocrystalline-Si.

  14. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  15. Atomic layer deposition of sodium and potassium oxides: evaluation of precursors and deposition of thin films.

    PubMed

    Østreng, E; Sønsteby, H H; Øien, S; Nilsen, O; Fjellvåg, H

    2014-11-28

    Thin films of sodium and potassium oxides have for the first time been deposited using atomic layer deposition. Sodium and potassium complexes of tert-butanol, trimethylsilanol and hexamethyldisilazide have been evaluated as precursors by characterising their thermal properties as well as tested in applications for thin film depositions. Out of these, sodium and potassium tert-butoxide and sodium trimethylsilanolate and hexamethyldisilazide were further tested as precursors together with the Al(CH3)3 + H2O/O3 process to form aluminates and together with ozone to form silicates. Sodium and potassium tert-butoxide and sodium trimethylsilanolate showed self-limiting growth and proved useable at deposition temperatures from 225 to 375 or 300 °C, respectively. The crystal structures of NaO(t)Bu and KO(t)Bu were determined by single crystal diffraction revealing hexamer- and tetramer structures, respectively. The current work demonstrates the suitability of the ALD technique to deposit thin films containing alkaline elements even at 8'' wafer scale.

  16. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  17. Thin-film ferrites vapor deposited by one-step process in vacuum

    NASA Technical Reports Server (NTRS)

    Hacskaylo, M.

    1966-01-01

    Thin-film ferrites are formed by vapor deposition of a mixture of powdered ferrites and powdered boron oxide at controlled temperatures in a vacuum chamber. These films are used in memory devices for computers and as thin-film inductors in communications and telemetry systems.

  18. Ion-assisted deposition of optical thin films. Doctoral thesis

    SciTech Connect

    Targove, J.D.

    1988-01-01

    The columnar microstructure of most thermally evaporated thin films detrimentally affects many of their properties through a reduction in packing density. In this work, the author investigated ion-assisted deposition as a means of disrupting this columnar growth for a number of coating materials. A Kaufman hot-cathode ion source bombarded thermally evaporated films with low-energy (<1000 eV) positive ions during deposition in a cryopumped box coater. The author investigated MgF/sub 2/, Na/sub 3/AlF/sub 6/, AlF/sub 3/, LaF/sub 3/,CeF/sub 3/,NdF/sub 3/,Al/sub 2/O/sub 3/, and AlN. Argon ion bombardment of the fluoride coatings increased their packing densities dramatically. He achieved packing densities near unity without significant absorption for MgF/sub 2/,LaF/sub 3/, and NdF/sub 3/, while Na/sub 3/AlF/sub 6/,AlF/sub 3/, and CeF/sub 3/ began to absorb before unity packing density could be achieved. Fluorine was preferentially sputtered by the ion bombardment, creating anion vacancies. The films adsorbed water vapor and hydroxyl radicals from the residual chamber atmosphere. These filled the vacancy sites, eliminating absorption in the visible, but the oxygen complexes caused increased absorption in the ultraviolet. For LaF/sub 3/ and NdF/sub 3/, a sufficient amount of oxygen caused a phase transformation from the fluoride phase to an oxyfluoride phase.

  19. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  20. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates

    NASA Astrophysics Data System (ADS)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-04-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  1. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon. PMID:25883544

  2. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage. PMID:22097561

  3. Development of vapor deposited thin films for bio-microsystems

    NASA Astrophysics Data System (ADS)

    Popat, Ketul Chandrakant

    Increasing demands for more biocompatible and sophisticated bio-microsystems in recent years has led to the development of a new technology called BioMEMS (biological micro-electro-mechanical systems). The foundation of this technology is the same as that of the traditional field of IC (integrated circuits), but an emphasis on developing new diagnostic and therapeutic modalities. Micro- and nano-fabrication techniques are currently being used to develop implants that can record, sense, stimulate and deliver to biological systems. Micromachined substrates can provide unique advantages over traditional implantable devices in terms of their ability to control surface micro-architecture, topography and feature size in micron and nano sizes. However, as BioMEMS technology is rapidly being developed, the practical use of these bio-microsystems is limited due to the inability to effectively interface with the biological system in non-immunogenic and stable manner. This is one of the most important considerations, and hence it is useful to focus on the fundamental scientific issues relating to material science, surface chemistry and immunology of silicon based bio-microsystems. This results in development of biomolecular interfaces that are compatible with both microfabrication processing and biological systems. The overall thrust of this research is to develop, characterize and integrate vapor deposited thin films with bio-microsystems in a manner that it is both reproducible and fully integrated with existing technologies. The main strategy is to use silane coatings precursor coatings on which poly (ethylene glycol) (PEG) will be coated in vapor phase. Silane has been coated user vapor phase, but its chemical and biological characterization and stability of the films under physiological conditions has not been investigated for biological applications. PEG has been coated in solution phase on silicon surface. However, it has not been coated under vapor phase. Here we are

  4. Pulsed laser deposition of carbon nanotube and polystyrene-carbon nanotube composite thin films

    NASA Astrophysics Data System (ADS)

    Stramel, A. A.; Gupta, M. C.; Lee, H. R.; Yu, J.; Edwards, W. C.

    2010-12-01

    In this work, we report on the fabrication of carbon nanotube thin films via pulsed laser deposition using a pulsed, diode pumped, Tm:Ho:LuLF laser with 2 μm wavelength. The thin films were deposited on silicon substrates using pure carbon nanotube targets and polystyrene-carbon nanotube composite targets. Raman spectra, scanning electron micrographs, and transmission electron micrographs show that carbon nanotubes are present in the deposited thin films, and that the pulsed laser deposition process causes minimal degradation to the quality of the nanotubes when using pure carbon nanotube targets.

  5. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  6. Effect of Deposition Temperature on the Properties of TIO2 Thin Films Deposited by Mocvd

    NASA Astrophysics Data System (ADS)

    Khalifa, Zaki S.

    2016-02-01

    Crystal structure, microstructure, and optical properties of TiO2 thin films deposited on quartz substrates by metal-organic chemical vapor deposition (MOCVD) in the temperature range from 250∘C to 450∘C have been studied. The crystal structure, thickness, microstructure, and optical properties have been carried out using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), and UV-visible transmittance spectroscopy, respectively. XRD patterns show that the obtained films are pure anatase. Simultaneously, the crystal size calculated using XRD peaks, and the grain size measured by AFM decrease with the increase in deposition temperature. Moreover, the texture of the films change and roughness decrease with the increase in deposition temperature. The spectrophotometric transmittance spectra have been used to calculate the refractive index, extinction coefficient, dielectric constant, optical energy gap, and porosity of the deposited films. While the refractive index and dielectric constant decrease with the increase of deposition temperature, the porosity shows the opposite.

  7. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping. PMID:25970986

  8. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

  9. Poly-para-xylylene thin films: A study of the deposition chemistry, kinetics, film properties, and film stability

    NASA Astrophysics Data System (ADS)

    Fortin, Jeffrey Bernard

    Poly-para-xylylene, or parylene, thin films are chemically vapor deposited (CVD), conformal, pin-hole free polymeric thin films. They have found many industrial uses since there invention in 1947 and continue to find new applications in micro-electronics, biotechnology, and micro-electro-mechanical systems. In this study the deposition chemistry, deposition kinetics, film properties, and film stability were investigated. A differentially pumped quadrupole mass spectrometer was used to analyze the vapor species present during the CVD process. The identity of dimer contamination and its impact on the CVD process and film properties was studied. The quantitative conversion of dimer to monomer was investigated and it was found that conversion begins at around 385°C and by 565°C 100% conversion is obtained. The kinetics of the CVD process was analyzed for a range of substrate temperatures and chamber pressures. A new kinetic model based on a two-step adsorption was developed and fit the kinetic data well. This model should be appropriate for use with all parylene family polymers. Many of the properties of the films deposited in this study were analyzed. This includes a detailed study of surface morphology using atomic force microscopy which shows the interface width increases as a power law of film thickness. Other properties analyzed were the thermal stability, electrical properties, index of refraction, birefringence, hardness, and elastic modulus. The effect of ultraviolet (UV) radiation of lambda ≥ 250 nm on the thermal stability, electrical, and optical properties of thin parylene films was studied. The thermal stability and electrical properties of UV treated films were seen to deteriorate as the radiation dose increased. The stability of parylene thin films receiving plasma etching was analyzed. The dielectric constant, dissipation factor, and leakage current of plasma etched thin parylene films were investigated and found to be stable for the range of

  10. Thin films of barium fluoride scintillator deposited by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kirlin, P. S.; Binder, R.; Winn, D. R.; O'Hare, J.; LaPierre, C.; Whitmore, M.

    1990-04-01

    We have used metal-organic chemical vapor deposition (MOCVD) technology to coat optical substrates with thin (˜1-10 μm thick) films of inorganic BaF 2 scintillator. Scanning electron microscope (SEM) photographs indicate that high-quality epitaxial crystalline film growth was achieved, with surface defects typically smaller than optical wavelengths. The scintillation light created by the deposition of ionizing radiation in the scintillating films was measured with a photomultiplier and shown to be similar to bulk melt-grown crystals. The results demonstrate the potential of these composite optical materials for planar and fiber scintillation radiation detectors in high energy and nuclear physics, synchrotron radiation research, and in radiation and X-ray imaging and monitoring.

  11. Chemical vapour deposition of zeolitic imidazolate framework thin films

    NASA Astrophysics Data System (ADS)

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials.

  12. Computer modeling of Y-Ba-Cu-O thin film deposition and growth

    SciTech Connect

    Burmester, C.; Gronsky, R. ); Wille, L. . Dept. of Physics)

    1991-07-01

    The deposition and growth of epitaxial thin films of YBa{sub 2}Cu{sub 3}O{sub 7} are modeled by means of Monte Carlo simulations of the deposition and diffusion of Y, Ba, and Cu oxide particles. This complements existing experimental characterization techniques to allow the study of kinetic phenomena expected to play a dominant role in the inherently non-equilibrium thin film deposition process. Surface morphologies and defect structures obtained in the simulated films are found to closely resemble those observed experimentally. A systematic study of the effects of deposition rate and substrate temperature during in-situ film fabrication reveals that the kinetics of film growth can readily dominate the structural formation of the thin film. 16 refs., 4 figs.

  13. Deposition of thermoelectric strontium hexaboride thin films by a low pressure CVD method

    NASA Astrophysics Data System (ADS)

    Tynell, Tommi; Aizawa, Takashi; Ohkubo, Isao; Nakamura, Katsumitsu; Mori, Takao

    2016-09-01

    Thin films of SrB6 were deposited on sapphire substrates using a chemical vapor deposition method, with elemental strontium and decaborane, B10H14, used as the strontium and boron sources, respectively. The formation of highly crystalline, phase-pure SrB6 films was confirmed with X-ray diffraction and reflection high energy diffraction (RHEED) analysis, and the films' thermoelectric transport properties were measured. A relatively high deposition temperature of 850-950 °C was found to be optimal for obtaining well-crystallized films at an extremely high deposition rate. The thermoelectric transport properties of the SrB6 thin films were observed to be comparable to those reported for bulk materials, but an unexpectedly high electrical resistivity led to a reduced power factor value for the thin films.

  14. Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

    NASA Astrophysics Data System (ADS)

    Merie, Violeta; Pustan, Marius; Negrea, Gavril; Bîrleanu, Corina

    2015-12-01

    Titanium nitride can be used among other materials as diffusion barrier for MEMS (microelectromechanical systems) applications. The aim of this study is to elaborate and to characterize at nanoscale titanium nitride thin films. The thin films were deposited by reactive magnetron sputtering on silicon substrates using a 99.99% purity titanium target. Different deposition parameters were employed. The deposition temperature, deposition time, substrate bias voltage and the presence/absence of a titanium buffer layer are the parameters that were modified. The so-obtained films were then investigated by atomic force microscopy. A significant impact of the deposition parameters on the determined mechanical and tribological characteristics was highlighted. The results showed that the titanium nitride thin films deposited for 20 min at room temperature without the presence of a titanium buffer layer when a negative bias of -90 V was applied to the substrate is characterized by the best tribological and mechanical behavior.

  15. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  16. Pulsed laser deposition of niobium nitride thin films

    SciTech Connect

    Farha, Ashraf Hassan Elsayed-Ali, Hani E.; Ufuktepe, Yüksel; Myneni, Ganapati

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  17. Pulsed laser deposition of niobium nitride thin films

    NASA Astrophysics Data System (ADS)

    Farha, Ashraf Hassan; Ufuktepe, Yüksel; Myneni, Ganapati; Elsayed-Ali, Hani E.

    2015-12-01

    Niobium nitride (NbNx) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbNx films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ˜40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbNx films from mixed β-Nb2N and cubic δ-NbN phases to single hexagonal β-Nb2N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbNx deposited on Si(100) were also investigated. The NbNx films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbNx film morphology and phase.

  18. Titanium dioxide thin film deposited on flexible substrate by multi-jet electrospraying

    NASA Astrophysics Data System (ADS)

    Ni, Daihong; Yi, Wuming; Cao, Zhoubin; Gu, Wenhua

    2015-10-01

    Titanium dioxide thin film plays an important role in thin film solar cells, and has promising future in everyday applications including air cleaning and self-cleaning glass. With the concepts of flexible solar cells and wearable devices being more and more popular, there is increasing interest to coat titanium dioxide thin films on flexible substrates, such as aluminum foils. Many methods have been used to fabricate titanium dioxide thin films, such as dip-coating, spin coating, aerosol spray, plasma-assisted coating, electrospraying, and so on. Among them, electrospraying is especially suitable for thin film deposition on flexible substrates. This work reports fabrication of dense and uniform titanium dioxide thin films on glass as well as flexible aluminum foil using multi-jet electrospraying technique.

  19. Ultraviolet laser deposition of graphene thin films without catalytic layers

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Alshareef, H. N.

    2013-01-01

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  20. AFM investigation and optical band gap study of chemically deposited PbS thin films

    NASA Astrophysics Data System (ADS)

    Zaman, S.; Mansoor, M.; Abubakar; Asim, M. M.

    2016-08-01

    The interest into deposition of nanocrystalline PbS thin films, the potential of designing and tailoring both the topographical features and the band gap energy (Eg) by controlling growth parameters, has significant technological importance. Nanocrystalline thin films of lead sulfide were grown onto glass substrates by chemical bath deposition (CBD) method. The experiments were carried out by varying deposition temperature. We report on the modification of structural and optical properties as a function of deposition temperature. The morphological changes of the films were analyzed by using SEM and AFM. AFM was also used to calculate average roughness of the films. XRD spectra indicated preferred growth of cubic phase of PbS films in (200) direction with increasing deposition time. Optical properties have been studied by UV-Spectrophotometer. From the diffused reflectance spectra we have calculated the optical Eg shift from 0.649-0.636 eV with increasing deposition time.

  1. Chromium Carbide Thin Films Synthesized by Pulsed Nd:YAG Laser Deposition

    NASA Astrophysics Data System (ADS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Terajima, Ryou; Emura, Masanari

    1999-06-01

    Chromium carbide thin films are synthesized on Si(100)substrates by a pulsed Nd:YAG laser deposition method at differentsubstrate temperatures. Glancing-angle X-ray diffraction shows that acrystalline chromium carbide film can be prepared at the substratetemperature of 700°C. Grain size of the films, examined witha field-emission secondary electron microscope, increases withincreasing substrate temperature.

  2. Process for thin film deposition of cadmium sulfide

    DOEpatents

    Muruska, H. Paul; Sansregret, Joseph L.; Young, Archie R.

    1982-01-01

    The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

  3. Protein Adsorption on Patterned Hydroxyapatite Thin Films Fabricated by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Kusunoki, Masanobu; Kawasima, Masami; Nishikawa, Hiroaki; Morimoto, Koichi; Hayami, Takashi; Hontsu, Shigeki; Kawai, Tomoji

    2005-02-01

    Protein adsorption on hydroxyapatite (HAP) thin film was investigated before and after patterning. Hydroxyapatite thin film 100 nm thick was deposited by pulsed laser deposition. The film was patterned by photolithography and wet etching with HCl solution. Proteins (phospholyrase b, bovine serum albumin, and others) labeled with fluorescein isothiocyanate (FITC) were used as the reagent. After the HAP film was soaked in the reagent and washed with pure water, a conspicuous contrast in FITC was observed between the HAP pattern and the glass substrate (or photoresist). This behavior showed that the biocompatibility of the HAP thin film was not influenced by the patterning process. Our technique for HAP thin film is adaptable for applications involving biosensors as electronic devices and scaffolds for tissue culture.

  4. Surface conditioning of fusion devices plasma assisted thin film deposition

    SciTech Connect

    Winter, J.; Waelbroeck, F.; Weinhold, P.; Esser, H.G.; von Seggern, J.; Philipps, V.; Vietzke, E. )

    1990-02-05

    Conditioning of the plasma facing surfaces of a fusion device is a necessary prerequisite for the generaton of pure, hot and stable fusion plasmas. Thin layers of carbon or of boron containing carbon deposited plasmachemically on the entire inner surfaces of a tokamak have proven to be a very effective technique for wall prehandling.

  5. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  6. Laser deposition of SmCo thin film and coating on different substrates

    NASA Astrophysics Data System (ADS)

    Allocca, L.; Bonavolontà, C.; Giardini, A.; Lopizzo, T.; Morone, A.; Valentino, M.; Verrastro, M. F.; Viggiano, V.

    2008-10-01

    Thin films and coatings of permanent magnetic materials are very important for different electronic and micromechanical applications. This paper deals with the fabrication, using pulsed laser deposition (PLD) technique, of good quality magnetic SmCo thin films on polycarbonate, steel, silicon and amorphous quartz substrates, for low cost electronic applications like radio frequency identification (RFID) antennas and electromechanical devices for fuel feeding control in the automotive. X-ray fluorescence and magnetic scanning measurements using giant magneto-resistive (GMR) sensors have been performed to study the functional magnetic properties of the deposited thin films.

  7. Electrochromic properties of molybdenum trioxide thin films prepared by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Maruyama, Toshiro; Kanagawa, Tetsuya

    1995-05-01

    Electrochromic molybdenum trioxide thin films were prepared by chemical vapor deposition. The source material was molybdenum carbonyl. Amorphous molybdenum trioxide thin films were produced at a substrate temperature 300 C. Reduction and oxidation of the films in a 0.3M LiClO4 propylene carbon ate solution caused desirable changes in optical absorption. Coulometry indicated that the coloration efficiency was 25.8 sq cm center-dot C(exp -1).

  8. Homogeneity analysis of sculptured thin films deposited in symmetric style through glancing angle deposition technique

    NASA Astrophysics Data System (ADS)

    Wang, Bin; Qi, Hong-Ji; Sun, Wei; He, Jun; Zhao, Jiao-Ling; Wang, Hu; Hou, Yong-Qiang

    2014-11-01

    The symmetric deposition technique is often used to improve the uniformity of sculptured thin film (STF). In this paper, optical properties of STF with the columnar angles ±β are analyzed theoretically, based on the characteristic matrix method for extraordinary waves. Then, the transmittances of uniformity monolayer and bilayer STF in symmetrical style are calculated to show the effect of the bilayer structure on the optical properties of STF. The inhomogeneity of STF is involved in analyzing the differences in transmittance and phase retardation between monolayer and bilayer STF deposited in symmetric style. The results show that optical homogeneity of STF can be improved by depositing in symmetric style at the normal incidence, but it is not the same case as the oblique incidence.

  9. Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

    NASA Technical Reports Server (NTRS)

    Hines, Jacqueline H. (Inventor)

    2015-01-01

    A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

  10. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  11. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation. PMID:18449260

  12. Effect of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films

    SciTech Connect

    Nongjai, R.; Khan, S.; Ahmad, H.; Khan, I.; Asokan, K.

    2013-06-03

    We present the influence of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films. Thin films of Co ferrite were deposited by rf sputtering on Si (100) substrate and characterized by X - Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Vibrating Sample Magnetometer (VSM). The XRD patterns showed the formation of crystalline single phase of the films. The particle size and surface roughness of the films were strongly influence by gas pressure. Hysteresis loops measured at room temperature showed the enhancement of magnetic properties with the increase of gas pressure which is attributed to the decrease of particle size.

  13. Pulsed laser deposition of NiMnGa thin films on silicon

    NASA Astrophysics Data System (ADS)

    Hakola, A.; Heczko, O.; Jaakkola, A.; Kajava, T.; Ullakko, K.

    Thin films of the magnetic shape-memory (MSM) material NiMnGa have been deposited on Si(100) substrates using pulsed laser deposition. The --200 300nm-thick films were prepared at substrate temperatures ranging from 450 °C to 650 °C and at different background Ar pressures. Large saturation magnetizations, up to 60% of the bulk value, were measured for the films. Only the films deposited in vacuum or at Ar pressures below 10-3 mbar and at temperatures between 500 °C and 600 °C were ferromagnetic. The films are mainly crystallized in the austenitic phase and they have a smooth surface with a low droplet density (0.01 μm-2). The magnetization and surface quality are sufficient that the films could be utilized in the realization of thin-film MSM devices.

  14. Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique

    NASA Astrophysics Data System (ADS)

    Lv, Jianguo; Sun, Yue; Zhao, Min; Cao, Li; Xu, Jiayuan; He, Gang; Zhang, Miao; Sun, Zhaoqi

    2016-03-01

    ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A1(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at -0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen.

  15. Deposition of biopolymer thin films by matrix assisted pulsed laser evaporation

    NASA Astrophysics Data System (ADS)

    Cristescu, R.; Mihaiescu, D.; Socol, G.; Stamatin, I.; Mihailescu, I. N.; Chrisey, D. B.

    We report on the successful deposition of high quality type I fibrilar collagen thin films by Matrix assisted pulsed laser evaporation (MAPLE). Thin films deposition was performed in a N2 ambient (20 Pa) using a KrF* laser source (λ=248 nm,τ>=20 ns) operated at a repetition rate of 3 Hz, the incident laser energy at a value within the range (20-35)mJ , and the laser spot area was (3.5-18.5)+/-0.1 mm2. The collagen films were deposited on double face polished <100> single crystalline Si wafers and characterized by Fourier transform infrared spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy. We demonstrate that our thin films are composed of collagen, with no impurities and the roughness can be controlled by the deposition conditions.

  16. Evaporation system and method for gas jet deposition of thin film materials

    DOEpatents

    Schmitt, Jerome J.; Halpern, Bret L.

    1994-01-01

    A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

  17. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  18. Detection of copper ions from aqueous solutions using layered double hydroxides thin films deposited by PLD

    NASA Astrophysics Data System (ADS)

    Vlad, A.; Birjega, R.; Matei, A.; Luculescu, C.; Nedelcea, A.; Dinescu, M.; Zavoianu, R.; Pavel, O. D.

    2015-10-01

    Layered double hydroxides (LDHs) thin films with Mg-Al were deposited using pulsed laser deposition (PLD) technique. We studied the ability of our films to detect copper ions in aqueous solutions. Copper is known to be a common pollutant in water, originating from urban and industrial waste. Clay minerals, including layered double hydroxides (LDHs), can reduce the toxicity of such wastes by adsorbing copper. We report on the uptake of copper ions from aqueous solution on LDH thin films obtained via PLD. The obtained thin films were characterized using X-ray Diffraction, Atomic Force Microscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis. The results in this study indicate that LDHs thin films obtained by PLD have potential as an efficient adsorbent for removing copper from aqueous solution.

  19. Incongruent transfer in laser deposition of FeSiGaRu thin films

    NASA Astrophysics Data System (ADS)

    van de Riet, E.; Kools, J. C. S.; Dieleman, J.

    1993-06-01

    The laser ablation and deposition of FeSiGaRu is studied. The deposited thin films are analyzed with Auger electron spectroscopy and Rutherford backscattering spectrometry. It is found that the gallium and ruthenium content of the thin films is strongly dependent on the laser fluence. At high laser fluences (6 J/cm2) the thin films are depleted of gallium due to preferential sputtering of the gallium atoms from the thin film. Near the threshold fluence (1.9 J/cm2) the films contain an excess of gallium due to preferential evaporation of gallium from the target. The latter conclusions are based on time-of-flight studies of ablated atoms and ions and on measurements of the atoms that are sputtered from the substrate by the incoming flux.

  20. Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Chen, Feng

    Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor

  1. NH3 sensing characteristics of nano-WO3 thin films deposited on porous silicon.

    PubMed

    Sun, Fengyun; Hu, Ming; Sun, Peng; Zhang, Jie; Liu, Bo

    2010-11-01

    The NH3 sensing characteristics of nano-tungsten trioxide (WO3) thin films deposited on porous silicon (PS) were investigated in the present study. Porous silicon layer was first prepared by electrochemical etching in an HF-based solution on a p(+)-type silicon substrate. Then, WO3 nano-films were deposited on the porous silicon layer by DC magnetron sputtering. Pt electrodes were deposited on the top surface of the WO3 films to obtain the WO3/PS gas sensor. The WO3 films deposited on PS were characterized by SEM, XRD and XPS. The NH3 sensing characteristics for WO3/PS gas sensor were tested at room temperature and 50 degrees C. The results showed that the NH3 sensing characteristics of WO3/PS were superior to WO3/Al2O3 at room temperature. The sensing mechanism of the nano-WO3 thin films based on PS was also discussed. PMID:21138022

  2. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    NASA Astrophysics Data System (ADS)

    Ulutas, Cemal; Gumus, Cebrail

    2016-03-01

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (Eg) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn3O4 phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  3. SrCoO3-δ thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ahvenniemi, Esko; Matvejeff, Mikko; Karppinen, Maarit

    2014-11-01

    Novel atomic layer deposition (ALD) process to deposit high-quality SrCoO3-δ thin films is introduced. Linear film growth is demonstrated within the film-thickness range of 15-300 nm. Post-annealing at 600 °C (in O2 or N2 atmosphere) is required to crystallize the as-deposited amorphous films. The new ALD process produces SrCoO3-δ films with a precisely controlled cation stoichiometry (±2.5%) and an appreciably high growth rate (1.67 Å per supercycle), hence providing us with a prominent method of fabricating high-quality SrCoO3-δ thin films in a readily scalable manner e.g. for intermediate-temperature solid oxide fuel cell cathodes.

  4. Deposition of hydroxyapatite thin films by Nd:YAG laser ablation: a microstructural study

    SciTech Connect

    Nistor, L.C.; Ghica, C.; Teodorescu, V.S.; Nistor, S.V. . E-mail: snistor@alpha1.infim.ro; Dinescu, M.; Matei, D.; Frangis, N.; Vouroutzis, N.; Liutas, C.

    2004-11-02

    Hydroxyapatite (HA) thin films has been successfully deposited by Nd:YAG laser ablation at {lambda} = 532 nm. The morphology and microstructure of the deposited layers was studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution electron microscopy (HREM). Polycrystalline HA films were directly obtained with the substrate at 300 deg. C and without introducing water vapors in the deposition chamber. Electron paramagnetic resonance (EPR) measurements show that the oxygen stoichiometry in the HA films is also maintained. Depositions performed at {lambda} = 335 nm laser wavelength and 300 deg. C substrate temperature resulted in polycrystalline layers of mixed composition of HA and tricalciumphosphate (TCP)

  5. Research on high-speed deposition thermodynamics characteristic for DLC thin film by RF-PECVD

    NASA Astrophysics Data System (ADS)

    Zhu, Mi; Xiong, Changxin; Yang, Changcheng

    2009-05-01

    Diamond-like carbon (DLC) thin film is often used on the surface of Infrared windows as the protecting film. PECVD method is one of the principal ways to obtain DLC film. The key factors, which affect the deposition rate of DLC film, and how to achieve high speed rate have been analyzed in this work. We prepared high-speed deposition DLC film samples on Germanium and Silicon by RF-PECVD, and the relationships between deposition rate, RF power, vacuum degree and dimension size of substrates, deposition temperature have been investigated. We found that when the deposition temperature rises, the deposition rate would rise correspondingly but fall down later. According to MIL-48616 environmental stability standards, the environmental and physical durability test results and the curve of spectrum are also presented in detail in the paper.

  6. Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films

    SciTech Connect

    Prokes, S. M.; Glembocki, O. J.; Cleveland, Erin; Caldwell, Josh D.; Foos, Edward; Niinistoe, Jaakko; Ritala, Mikko

    2012-01-30

    The plasmonic behavior of Ag thin films produced by plasma enhanced atomic layer deposition (PEALD) has been investigated. We show that as-deposited flat PEALD Ag films exhibit unexpected plasmonic properties, and the plasmonic enhancement can differ markedly, depending on the microstructure of the Ag film. Electromagnetic field simulations indicate that this plasmonic behavior is due to air gaps that are an inherent property of the mosaic-like microstructure of the PEALD-grown Ag film, suggesting that this is a metamaterial with behavior very similar to what would be expected in spoof plasmonics where gaps are fabricated in films to create plasmonic-like resonances.

  7. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m‑1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  8. Theoretical investigation about secondary deposition of thin-film formation by molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Chen, Huawei; Hagiwara, Ichiro; Kiet Tieu, A.; Kishimoto, Kikuo; Liu, Qiang

    2007-05-01

    The thin-film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin-film in short time as gas fluids through surface of substrate. Such growth mechanism has been mainly investigated on the basis of experiment. Due to immense cost of the experimental equipment and low level of current measurement technology, the comprehension about authentic effect of formation condition on properties of nanomaterial is limited in qualitative manner. Three quantitative items: flatness of primary deposition, adhesion between cluster and substrate, and degree of epitaxial growth were proposed to evaluate the property of thin-film. In this simulation, three different cluster sizes of 203, 653, and 1563 atoms with different velocities (0, 10, 100, 1000, and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. To increase initial velocity not only enhanced the speed of epitaxial growth, adhesion between clusters and substrate, but also increased the degree of epitaxy for primary deposition and secondary deposition. Exfoliation pattern of thin-film was profoundly dependent on initial velocity through comparison between adhesion of primary and secondary deposition. Moreover, the epitaxial growth became well as the temperature of substrate was raised, and the degree of epitaxy of small cluster was larger than that of larger cluster, no matter of primary and secondary deposition.

  9. Ag Nanodots Emitters Embedded in a Nanocrystalline Thin Film Deposited on Crystalline Si Solar Cells.

    PubMed

    Park, Seungil; Ryu, Sel Gi; Ji, HyungYong; Kim, Myeong Jun; Peck, Jong Hyeon; Kim, Keunjoo

    2016-06-01

    We fabricated crystalline Si solar cells with the inclusion of various Ag nanodots into the additional emitters of nanocrystallite Si thin films. The fabricated process was carried out on the emitter surface of p-n junction for the textured p-type wafer. The Ag thin films were deposited on emitter surfaces and annealed at various temperatures. The amorphous Si layers were also deposited on the Ag annealed surfaces by hot-wire chemical vapor deposition and then the deposited layers were doped by the second n-type doping process to form an additional emitter. From the characterization, both the Ag nanodots and the deposited amorphous Si thin films strongly reduce photo-reflectances in a spectral region between 200-400 nm. After embedding Ag nanodots in nanocrystallite Si thin films, a conversion efficiency of the sample with added emitter was achieved to 15.1%, which is higher than the 14.1% of the reference sample and the 14.7% of the de-posited sample with a-Si:H thin film after the Ag annealing process. The additional nanocrystallite emitter on crystalline Si with Ag nanodots enhances cell properties. PMID:27427665

  10. Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

    PubMed Central

    Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben

    2015-01-01

    Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1−xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1−xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1−xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1−xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1−xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C–320 °C) on MgO using PLD. This offers a broad scope of various applications. PMID:26548645

  11. Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

    NASA Astrophysics Data System (ADS)

    Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben

    2015-11-01

    Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1-xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1-xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1-xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1-xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1-xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C-320 °C) on MgO using PLD. This offers a broad scope of various applications.

  12. Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

    NASA Astrophysics Data System (ADS)

    Pereira, M. J.; Lourenço, A. A. C. S.; Amaral, V. S.

    2014-07-01

    Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

  13. In situ analysis of adsorption process from residual gases during thin film deposition

    NASA Astrophysics Data System (ADS)

    Giedraitis, A.; Tamulevicius, S.; Slapikas, K.; Gudaitis, R.; Juraitis, A.

    2008-03-01

    In this work we present the developed experimental technique as well as results of optical control of adsorption processes during thin film deposition. Different metallic films: (silver) as a model material and barium getter films were studied. Thermal evaporation method has been used to deposit thin metallic films and films of barium getter on glass substrates. Kinetics of the optical absorbance of the growing film was registered in situ measuring transmission of the film-substrate structure. These measurements were done in parallel to the ex-situ absorption (UV-VIS) and reflection spectra as well as XRD analysis. Such complex measurements enabled us to follow adsorption process from the residual gases during thermal evaporation as well to control adsorption process after the evaporation.

  14. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  15. Deposition and characterization of La 2Ti 2O 7 thin films via spray pyrolysis process

    NASA Astrophysics Data System (ADS)

    Todorovsky, D. S.; Todorovska, R. V.; Milanova, M. M.; Kovacheva, D. G.

    2007-03-01

    Thin films of La 2Ti 2O 7 have been deposited on fused silica and Si substrates by a spray pyrolysis method using ethylene glycol solution of La(III)-Ti(IV)-citrate complexes as starting material and O 2 as a carrier gas. The composition, crystal structure and morphology of the films are studied.

  16. Process Analysis Of Thin Film Deposition With An In Situ Ellipsometer

    NASA Astrophysics Data System (ADS)

    Savrda, Steven; Himel, Marc D.; Guenther, Karl H.; Urban, Frank K.

    1990-01-01

    Thin films deposited in high vacuum by thermal evaporation, electron beam evaporation, and ion assisted deposition are anything but smooth, homogeneous, stratified media with plane parallel boundaries as assumed in thin film design and theory. In particular, the porosity brought about by the columnar microstructure of these films has been a problem ever since their first use. The refractive index may change upon exposure to ambient atmosphere, as a result of H2O adsorption. In-situ rapid scanning spectrophotometers and ellipsometers have helped various researchers to determine the degree of index change and the packing density of the films. Low voltage reactive ion plating is a rather novel deposition technique which produces thin films with packing densities of unity and higher. The dense, vitreous or polycrystalline microstructure, which pre-vents the films from adsorbing water upon exposure to air, yields films with bulk-like optical properties that are constant in time. However, there are problems with increased absorption particularly with ion plated TiO2 and SiO2 multilayer thin-film stacks. Continuous measurements of n and k during deposition need to be studied in order to determine the location of the increased absorption. Engineering aspects of mounting a Rudolph Research ellipsometer on a Balzers BAP 800 vacuum system will also be discussed.

  17. Chemical Vapor Deposition for Ultra-lightweight Thin-film Solar Arrays for Space

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Jin, Michael H.; Lau, Janice E.; Harris, Jerry D.; Cowen, Jonathan E.; Duraj, Stan A.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. A key technical issues outlined in the 2001 U.S. Photovoltaic Roadmap, is the need to develop low cost, high throughput manufacturing for high-efficiency thin film solar cells. At NASA GRC we have focused on the development of new single-source-precursors (SSPs) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV devices.

  18. Spray deposited ZnO: Au thin films for solar cell application

    NASA Astrophysics Data System (ADS)

    Tarwal, N. L.; Harale, N. S.; Jadhav, P. R.; Patil, P. S.

    2012-06-01

    In the present investigation, the ZnO-Au thin films are deposited in-situ with the simple and cost-effective spray pyrolysis technique. The preparative parameters were fine-tuned to yield better quality samples. A surface Plasmon resonance (SPR) induced absorption bands in the visible region have been observed for both the samples deposited at 450°C. The structural evolution of Au-ZnO thin films with doping concentrations are reflected in the XRD patterns. The surface morphological study of the synthesized thin films was carried out using FESEM micrographs. The evolution of the SPR absorption with concentration of the Gold incorporation is discussed. The optical studies were carried out by using UV-Vis Spectrophotometer and spectrofluorometer (JASCO FP-750) at room temperature. These thin films were used for photoelectrochemical (PEC) application. Encouraging results are obtained.

  19. Pulsed laser deposition of AlMgB14 thin films

    SciTech Connect

    Britson, Jason Curtis

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  20. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    NASA Astrophysics Data System (ADS)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  1. Stabilizing laser energy density on a target during pulsed laser deposition of thin films

    DOEpatents

    Dowden, Paul C.; Jia, Quanxi

    2016-05-31

    A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

  2. Nanomechanical properties of platinum thin films synthesized by atomic layer deposition

    SciTech Connect

    Mamun, M.A.; Gu, D.; Baumgart, H.; Elmustafa, A.A.

    2015-03-01

    The nanomechanical properties of Pt thin films grown on Si (100) using atomic layer deposition (ALD) were investigated using nanoindentation. Recently, atomic layer deposition (ALD) has successfully demonstrated the capability to deposit ultra-thin films of platinum (Pt). Using (methylcyclopentadienyl) trimethylplatinum (MeCpPtMe3) as chemical platinum precursor and oxygen (O2) as the oxidizing agent, the ALD synthesis of Pt can be achieved with high conformity and excellent film uniformity. The ALD process window for Pt films was experimentally established in the temperature range between 270 °C and 320 °C, where the sheet conductance was constant over that temperature range, indicating stable ALD Pt film growth rate. ALD growth of Pt films exhibits very poor nucleation and adhesion characteristics on bare Si surfaces when the native oxide was removed by 2% HF etch. Pt adhesion improves for thermally oxidized Si wafers and for Si wafers covered with native oxide. Three ALD Pt films deposited at 800, 900, and 1000 ALD deposition cycles were tested for the structural and mechanical properties. Additionally, the sample with 900 ALD deposition cycles was further annealed in forming gas (95% N2 and 5% H2) at 450 °C for 30 min in order to passivate dangling bonds in the grain boundaries of the polycrystalline Pt film. Cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscope (SEM) were employed to characterize the films' surface structure and morphology. Nanoindentation technique was used to evaluate the hardness and modulus of the ALD Pt films of various film thicknesses. The results indicate that the films depict comparable hardness and modulus results; however, the 800 and 1000 ALD deposition cycles films without forming gas annealing experienced significant amount of pileup, whereas the 900 ALD deposition cycles sample annealed in forming gas resulted in a smaller pileup.

  3. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    PubMed Central

    Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    Summary This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process. PMID:25977868

  4. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation.

    PubMed

    Alvarado, Jose Alberto; Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  5. Engineering the Crystalline Morphology of Polymer Thin Films via Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Jeong, Hyuncheol; Arnold, Craig; Priestley, Rodney

    Thin-film growth via physical vapor deposition (PVD) has been successfully exploited for the delicate control of film structure for molecular and atomic systems. The application of such a high-energetic process to polymeric film growth has been challenged by chemical degradation. However, recent development of Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique opened up a way to deposit a variety of macromolecules in a PVD manner. Here, employing MAPLE technique to the growth of semicrystalline polymer thin films, we show the engineering of crystalline film morphology can be achieved via manipulation of substrate temperature. This is accomplished by exploiting temperature effect on crystallization kinetics of polymers. During the slow film growth crystallization can either be permitted or suppressed, and crystal thickness can be tuned via temperature modulation. In addition, we report that the crystallinity of polymer thin films may be significantly altered with deposition temperature in MAPLE processing. We expect that this ability to manipulate crystallization kinetics during polymeric film growth will open the possibility to engineer structure in thin film polymeric-based devices in ways that are difficult by other means.

  6. Enhanced localized superconductivity in Sr2RuO4 thin film by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cao, J.; Massarotti, D.; Vickers, M. E.; Kursumovic, A.; Di Bernardo, A.; Robinson, J. W. A.; Tafuri, F.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-09-01

    Superconducting c-axis-oriented Sr2RuO4 thin film has been fabricated using pulsed laser deposition. Although the superconductivity is localized, the onset critical temperature is enhanced over the bulk value. X-ray microstructural analysis of Sr2RuO4 superconducting and non-superconducting thin films suggests the existence of the localized stacking faults and an overall c-axis lattice expansion which may account for the locally enhanced superconductivity.

  7. Conductivity of Thin Films Based on Single-Walled Carbon Nanotubes Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Rybakov, M. S.; Kosobutsky, A. V.; Sevostyanov, O. G.; Russakov, D. M.; Lomakin, M. V.; Chirkova, I. M.; Shandakov, S. D.

    2015-03-01

    Electrical and optical properties of thin films of single-walled carbon nanotubes (SWCNT) obtained by aerosol chemical vapor deposition using ethanol, ferrocene, and sulfur are studied. Structural and geometrical characteristics of the synthesis products are determined by the methods of Raman spectroscopy and transmission electron microscopy. The effect of sulfur on the properties of the SWCNTs and thin films based on them is found.

  8. Development of a fluorescence based flux sensor for thin film growth and nanoparticle deposition

    NASA Astrophysics Data System (ADS)

    De Roo, Bert; Vervaele, Mattias; Rajala, Markku; Miller, Toni; Guillon, Herve; Seo, Jin Won; Locquet, Jean-Pierre

    2016-07-01

    An optical flux sensor, based on the fluorescence properties of materials and nanoparticles, has been developed to control the deposition rate in thin film deposition systems. Using a simple diode laser and a photomultiplier tube with a light filter, we report the detection of gallium atoms and CdSe-ZnS quantum dots. This setup has a high sensitivity and reproducibility.

  9. Development of a fluorescence based flux sensor for thin film growth and nanoparticle deposition.

    PubMed

    De Roo, Bert; Vervaele, Mattias; Rajala, Markku; Miller, Toni; Guillon, Herve; Seo, Jin Won; Locquet, Jean-Pierre

    2016-07-01

    An optical flux sensor, based on the fluorescence properties of materials and nanoparticles, has been developed to control the deposition rate in thin film deposition systems. Using a simple diode laser and a photomultiplier tube with a light filter, we report the detection of gallium atoms and CdSe-ZnS quantum dots. This setup has a high sensitivity and reproducibility. PMID:27475600

  10. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    DOE PAGES

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited undermore » higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

  11. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    SciTech Connect

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  12. Properties of NiO thin films deposited by intermittent spray pyrolysis process

    NASA Astrophysics Data System (ADS)

    Reguig, B. A.; Khelil, A.; Cattin, L.; Morsli, M.; Bernède, J. C.

    2007-02-01

    NiO thin films have been grown on glass substrates by intermittent spray pyrolysis deposition of NiCl 2·6H 2O diluted in distilled water, using a simple "perfume atomizer". The effect of the solution molarity on their properties was studied and compared to those of NiO thin films deposited with a classical spray system. It is shown that NiO thin films crystallized in the NiO structure are achieved after deposition. Whatever the precursor molarity, the grain size is around 25-30 nm. The crystallites are preferentially oriented along the (1 1 1) direction. All the films are p-type. However, the thickness and the conductivity of the NiO films depend on the precursor contraction. By comparison with the properties of films deposited by classical spray technique, it is shown that the critical precursor concentration, which induces strong thin films properties perturbations, is higher when a perfume atomizer is used. This broader stability domain can be attributed to better chlorides decomposition during the rest time used in the perfume atomizer technique.

  13. In situ monitoring of atomic layer deposition in nanoporous thin films using ellipsometric porosimetry.

    PubMed

    Dendooven, Jolien; Devloo-Casier, Kilian; Levrau, Elisabeth; Van Hove, Robbert; Sree, Sreeprasanth Pulinthanathu; Baklanov, Mikhail R; Martens, Johan A; Detavernier, Christophe

    2012-02-28

    Ellipsometric porosimetry (EP) is a handy technique to characterize the porosity and pore size distribution of porous thin films with pore diameters in the range from below 1 nm up to 50 nm and for the characterization of porous low-k films especially. Atomic layer deposition (ALD) can be used to functionalize porous films and membranes, e.g., for the development of filtration and sensor devices and catalytic surfaces. In this work we report on the implementation of the EP technique onto an ALD reactor. This combination allowed us to employ EP for monitoring the modification of a porous thin film through ALD without removing the sample from the deposition setup. The potential of in situ EP for providing information about the effect of ALD coating on the accessible porosity, the pore radius distribution, the thickness, and mechanical properties of a porous film is demonstrated in the ALD of TiO(2) in a mesoporous silica film.

  14. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition.

    PubMed

    Ponja, Sapna D; Sehmi, Sandeep K; Allan, Elaine; MacRobert, Alexander J; Parkin, Ivan P; Carmalt, Claire J

    2015-12-30

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activity of these samples was tested against Escherichia coli and Staphylococcus aureus in the dark and under UV light (365 nm). All Ag-deposited films reduced the numbers of E. coli by 99.9% within 6 h and the numbers of S. aureus by 99.9% within only 2 h. FTO/Ag reduced bacterial numbers of E. coli to below the detection limit after 60 min and caused a 99.9% reduction of S. aureus within only 15 min of UV irradiation. Activ/Ag reduced the numbers of S. aureus by 66.6% after 60 min and TiO2/Ag killed 99.9% of S. aureus within 60 min of UV exposure. More remarkably, we observed a 99.9% reduction in the numbers of E. coli within 6 h and the numbers of S. aureus within 4 h in the dark using our novel TiO2/Ag system. PMID:26632854

  15. Preparation of mixed bismuth and iron thin films by pulsed laser deposition using powder targets

    NASA Astrophysics Data System (ADS)

    Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Tanaka, Yuki; Suda, Yoshiaki

    2016-01-01

    Bismuth iron garnet (Bi3Fe5O12) thin films, for use in magnetic optics, were prepared by a pulsed laser deposition method using Bi and Fe mixed powder targets in oxygen gas. The deposition rate of the film strongly depended on the target mixture. The X-ray diffraction and X-ray photoelectron spectroscopy results suggest that the prepared films were not Bi3Fe5O12 but Bi-rich films, because of the lower melting temperature of Bi (544 K) compared with that of Fe (1811 K).

  16. Investigation of thin films of organic-based magnets grown by physical vapor deposition

    SciTech Connect

    Kao, C. Y.; Lu, Y.; Li, B.; Yoo, J.-W.; Epstein, A. J.

    2014-10-06

    Thin films of organic-based magnet, V[TCNE]{sub x} (TCNE: tetracyanoethylene), were deposited by physical vapor deposition (PVD) based reactive evaporation. The growth conditions were studied in detail. A saturated composition of V[TCNE]{sub ∼1.9} was determined by optimizing the growth condition. Two sets of films with different V to TCNE ratios were characterized. Both films were magnetic ordered up to 400 K and held coercive field of 60 Oe at room temperature. With the presence of excess vanadium within the film, the increase of defects created by PVD results in significant change in electronic property.

  17. Effect of Post Deposition Annealing Treatments on Properties of AZO Thin Films for Schottky Diode Applications.

    PubMed

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    High-quality aluminum (Al) doped ZnO (AZO) thin films were deposited on silicon substrates by RF sputtering at room temperature. The deposited films were annealed from the temperatures 350 °C to 650 °C in pure nitrogen (N₂) ambient. The effects of annealing on the microstructural, optical and electrical properties of the AZO films were investigated. A detailed analysis by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Four Probe and Hall measurements was performed to study the properties of these AZO thin films. It was observed that all of the as-deposited and annealed AZO films have homogenous surfaces and hexagonal wurtzite structures with good crystalline quality. The study also suggested that there was an intermediate post annealing temperature (450 °C) at which the deposited ZnO film exhibit best surface characteristics. Pd/AZO Schottky devices were fabricated with 450 °C annealed AZO thin films and the parameters of Schottky devices were extracted from I-V characteristics. These results indicated that the Pd/AZO films were very much suitable for various optoelectronics applications particularly for metal semiconductor metal based UV detector application. PMID:27398537

  18. Centrifugal Deposition of Microgels for the Rapid Assembly of Nonfouling Thin Films

    PubMed Central

    South, Antoinette B.; Whitmire, Rachel E.; García, Andrés J.; Lyon, L. Andrew

    2010-01-01

    Thin films assembled from microgel building blocks have been constructed using a simple, high-throughput, and reproducible centrifugation (or “active”) deposition technique. When compared to a common passive adsorption method (e.g., dip coating), microgels that are actively deposited onto a surface have smaller footprints and are more closely packed. Under both active and passive deposition conditions, the microgel footprint areas decrease during deposition. However, under active deposition, the microgel footprint appears to decrease continually and to a greater degree over the course of the deposition, forming a tightly packed, homogeneous film. Taking advantage of the rapid and uniform assembly of these films, we demonstrate the use of active deposition toward the fabrication of polyelectrolyte multilayers containing anionic microgels and a cationic linear polymer. Microgel multilayers successfully demonstrated effective blocking of the underlying substrate toward macrophage adhesion, which is a highly sought-after property for modulating the inflammatory response to an implanted biomaterial. PMID:20356152

  19. Reflectance-Correcting Pyrometry in Thin Film Deposition Applications

    SciTech Connect

    BREILAND, WILLIAM G.

    2003-06-01

    A detailed study of an emissivity-correcting pyrometer instrument for measuring wafer surface temperatures during thin film growth is presented. The basic physics is reviewed and preliminary data showing a temperature over-compensation artifact is shown. The rest of the report presents an exhaustive analysis of the potential sources for the temperature over-compensation effect. This analysis yields an in situ calibration method that can be used to remove temperature over-compensation artifacts that arise from any first-order systematic error in either the reflectance or thermal emission measurement. With corrections applied, artifact-free surface temperatures can be measured with a precision of a few {sup o}C over a wide range of wafer emissivities.

  20. Hydroxyapatite thin films grown by pulsed laser deposition and radio-frequency magnetron sputtering: comparative study

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Morosanu, C.; Iliescu, M.; Mihailescu, I. N.

    2004-04-01

    Hydroxyapatite (HA) thin films for applications in the biomedical field were grown by pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RF-MS) techniques. The depositions were performed from pure hydroxyapatite targets on Ti-5Al-2.5Fe (TiAlFe) alloys substrates. In order to prevent the HA film penetration by Ti atoms or ions diffused from the Ti-based alloy during and after deposition, the substrates were pre-coated with a thin buffer layer of TiN. In both cases, TiN was introduced by reactive PLD from TiN targets in low-pressure N 2. The PLD films were grown in vacuum onto room temperature substrates. The RF-MS films were deposited in low-pressure argon on substrates heated at 550 °C. The initially amorphous PLD thin films were annealed at 550 °C for 1 h in ambient air in order to restore the initial crystalline structure of HA target. The thickness of the PLD and RF-MS films were ˜1 μm and ˜350 nm, respectively. All films were structurally studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray spectrometry (EDS) and white light confocal microscopy (WLCM). The mechanical properties of the films were tested by Berkovich nano-indentation. Both PLD and RF-MS films mostly contain HA phase and exhibit good mechanical characteristics. Peaks of CaO were noticed as secondary phase in the GIXRD patterns only for RF-MS films. By its turn, the sputtered films were smoother as compared to the ones deposited by PLD (50 nm versus 250 nm average roughness). The RF-MS films were harder, more mechanically resistant and have a higher Young modulus.

  1. UV optical properties of thin film oxide layers deposited by different processes.

    PubMed

    Pellicori, Samuel F; Martinez, Carol L

    2011-10-01

    UV optical properties of thin film layers of compound and mixed oxide materials deposited by different processes are presented. Japan Electron Optics Laboratory plasma ion assisted deposition (JEOL PIAD), electron beam with and without IAD, and pulsed DC magnetron sputtering were used. Comparisons are made with published deposition process data. Refractive indices and absorption values to as short as 145 nm were measured by spectroscopic ellipsometry (SE). Electronic interband defect states are detected that are deposition-process dependent. SE might be effective in identifying UV optical film quality, especially in defining processes and material composition beneficial for high-energy excimer laser applications and environments requiring stable optical properties.

  2. Chemical bath deposition of Cu3BiS3 thin films

    NASA Astrophysics Data System (ADS)

    Deshmukh S., G.; Panchal A., K.; Vipul, Kheraj

    2016-05-01

    First time, copper bismuth sulfide (Cu3BiS3) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu3BiS3 thin films. The optical, surface morphology and structural properties of the Cu3BiS3 thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu3BiS3 film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the order of 105 cm-1. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu3BiS3 films can be applied as an absorber layer for thin film solar cells.

  3. Effects of atomic collisions on the stoichiometry of thin films prepared by pulsed laser deposition.

    PubMed

    Packwood, Daniel M; Shiraki, Susumu; Hitosugi, Taro

    2013-07-19

    We present an analytical model to quantitatively study the effect of collisions between the atoms of a plume and the molecules of a surrounding gas on the nonstoichiometry of lithium-containing oxide thin films deposited using pulsed laser deposition. A comparison of the experimental data and the model ascertain the inevitable loss of the lighter cation, leading to a nonstoichiometric reduction in the content of lighter cations in the films. Our model is the first analytic model of collision-induced plume expansion that can explain the partial oxygen pressure dependence of the Li content of a thin film. These studies have important implications for collision effects that affect the growth of thin films containing both light and heavy elements.

  4. Structural, optical, and electrical properties of pulsed laser deposition CIGSS thin films

    NASA Astrophysics Data System (ADS)

    Xu, Yan-Bin; Kang, Y. Zhen-Feng; Fan, Yue; Xiao, Ling-ling; Bo, Qing-Rui; Ding, Tie-Zhu

    2015-12-01

    High-quality CuIn0.75Ga0.25(Se0.75S0.25)2 (CIGSS) thin films were synthesized on the soda-lime glass (SLG) substrates by pulsed laser deposition. The structural and optical properties of CIGSS thin films were studied by experiments and theoretical calculations. XRD result reveals that the films are of chalcopyrite structure. The experiments and theory show that CIGSS is a semiconductor with a direct band gap. The direct band gap energy of the deposited CIGSS thin films are in the solar energy range. The band structure and density of states of the CIGSS crystals were studied by the first principles density functional theory. The experimental data and theoretical data have demonstrated good agreement.

  5. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  6. Antimony sulphide thin film as an absorber in chemically deposited solar cells

    NASA Astrophysics Data System (ADS)

    Messina, Sarah; Nair, M. T. S.; Nair, P. K.

    2008-05-01

    Antimony sulfide thin films (thickness, 500 nm) were deposited on chemically deposited CdS thin films (100 nm) obtained on 3 mm glass substrates coated with a transparent conductive coating of SnO2:F (TEC-15 with 15 Ω sheet resistance). Two different chemical formulations were used for depositing antimony sulfide films. These contained (i) antimony trichloride dissolved in acetone and sodium thiosulfate, and (ii) potassium antimony tartrate, triethanolamine, ammonia, thioacetamide and small concentrations of silicotungstic acid. The films were heated at 250 °C in nitrogen. The cell structure was completed by depositing a 200 nm p-type PbS thin film. Graphite paint applied on the PbS thin film and a subsequent layer of silver paint served as the p-side contact. The cell structure: SnO2:F/CdS/Sb2S3 (i or ii)/PbS showed open circuit voltage (Voc) of 640 mV and short circuit current density (Jsc) above 1 mA cm-2 under 1 kW m-2 tungsten-halogen radiation. Four cells, each of 1.7 cm2 area, were series-connected to give Voc of 1.6 V and a short circuit current of 4.1 mA under sunlight (1060 W m-2).

  7. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    NASA Astrophysics Data System (ADS)

    Huang, Ying; Sarkar, D. K.; Chen, X.-Grant

    2015-02-01

    Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  8. Effect of substrate temperature and film thickness on the characteristics of silver thin films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mashaiekhy, Jahanbakhsh; Shafieizadeh, Zahra; Nahidi, Hossein

    2012-11-01

    Silver (Ag) films were prepared by DC magnetron sputtering deposition at different substrate temperatures (25-450 °C) and film thicknesses (100-800 nm) and their morphological, optical, electrical and structural properties were investigated. Atomic force microscopy (AFM) was employed to study the surface topography of the thin films. The grain size as well as surface roughness of the films is strongly dependent on the temperature and the film thickness. X-ray diffraction experiments showed the intensity enhancement by increasing substrate temperature, also by increasing film thickness. The optical properties were determined by means of spectrophotometric analysis. It is found that the optical reflection is not affected significantly with substrate temperature and film thickness. The electrical resistivities of films were determined by four-point probe measurements. The experimental results indicate that the films with higher thickness and deposition temperature have the lowest resistivity.

  9. Pulsed electron beam deposition of highly oriented thin films of polytetrafluoroethylene

    NASA Astrophysics Data System (ADS)

    Chandra, Vimlesh; Manoharan, Solomon S.

    2008-04-01

    Thin films of polytetrafluoroethylene (PTFE) were deposited by pulsed electron deposition (PED) technique. The transmission electron microscopy (TEM) image of the RT fabricated (20 Å thick) film on carbon coated copper grid shows crystalline nature. Infrared spectra show one to one correspondence between PED ablated film and the PTFE bulk target. The asymmetrical and symmetrical -CF 2- stretching modes were observed at 1220 and 1156 cm -1, respectively. The -CF 2- wagging and bending modes occur at 644 and 512 cm -1, respectively. X-ray diffraction patterns of the film deposited at room temperature (RT) show oriented film along (1 0 0) plane of hexagonal structure and the crystalline nature is retained up to 300 °C on vacuum annealing. The room temperature fabricated film shows smooth and pin hole free surface whereas post-annealing brings discontinuity, roughness and pin holes.

  10. Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

    NASA Astrophysics Data System (ADS)

    Ichimura, Masaya; Kajima, Takahiro; Kawai, Shoichi; Mibu, Ko

    2016-03-01

    Iron-sulfide-oxide thin films, which are promising candidates for solar cell materials, were deposited by electrochemical deposition. As-deposited and annealed films were characterized by Mössbauer spectroscopy, X-ray diffraction (XRD), and Raman scattering at room temperature. The as-deposited film is amorphous, and the oxygen content is about 1/4 of the sulfur content (S/Fe ≈ 1.5, O/Fe ≈ 0.4). The Mössbauer spectrum for the as-deposited film is a doublet with a broad line profile having hyperfine parameters similar to those of FeS2 pyrite or marcasite. This indicates that Fe atoms are in the Fe2+ low-spin state, as in FeS2.

  11. Pulsed laser deposition of barium metaplumbate thin films for ferroelectric capacitors

    NASA Astrophysics Data System (ADS)

    Mardare, A. I.; Mardare, C. C.; Fernandes, J. R. A.; Vilarinho, P. M.; Joanni, E.

    2003-08-01

    Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO2/Ti/Pt substrates with a high deposition rate. The temperatures used ranged between 400 ^circ C and 700 ^circ C. As the deposition temperature was increased, the films assumed a strong (222) preferential orientation. This orientation of the electrodes was reflected on the PZT films, having a very big influence on their ferroelectric behavior. The PZT films made over BPO deposited at high temperature presented high values of remanent polarization (43 μC/cm^2) but indications of high leakage currents could be observed in the hysteresis loops. By using BPO bottom electrodes, a 30% improvement in the fatigue behavior of PZT capacitors when compared with the normal platinum electrodes was observed.

  12. Morphology of Imidazolium-Based Ionic Liquids as Deposited by Vapor Deposition: Micro-/Nanodroplets and Thin Films.

    PubMed

    Costa, José C S; Mendes, Adélio; Santos, Luís M N B F

    2016-07-18

    The morphology of micro- and nanodroplets and thin films of ionic liquids (ILs) prepared through physical vapor deposition is presented. The morphology of droplets deposited on indium-tin-oxide-coated glass is presented for the extended 1-alkyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([Cn C1 im][Ntf2 ]; n=1-8) series, and the results show the nanostructuration of ILs. The use of in-vacuum energetic particles enhances/increases the nanodroplets mobility/coalescence mechanisms and can be a pathway to the fabrication of thin IL films. PMID:27028765

  13. Anomalous scaling behavior and surface roughening in molecular thin-film deposition

    SciTech Connect

    Yim, S.; Jones, T. S.

    2006-04-15

    The thin film growth dynamics of a molecular semiconductor, free-base phthalocyanine (H{sub 2}Pc), deposited by organic molecular beam deposition, has been studied by atomic force microscopy (AFM) and height difference correlation function (HDCF) analysis. The measured dynamic scaling components ({alpha}{sub loc}=0.61{+-}0.12, {beta}=1.02{+-}0.08, and 1/z=0.72{+-}0.13) are consistent with rapid surface roughening and anomalous scaling behavior. A detailed analysis of AFM images and simple growth models suggest that this behavior arises from the pronounced upward growth of crystalline H{sub 2}Pc mounds during the initial stages of thin film growth.

  14. Uses of ion bombardment in thin-film deposition

    SciTech Connect

    Erck, R.A.; Fenske, G.R.; Erdemir, A.

    1990-10-01

    Use of plasma- and ion-beam-modified surfaces and surface coatings in continually expanding in engineering disciplines. The purpose of these modifications and treatments is to impart favorable properties, such as wear resistance and lubricity, to the surfaces, while at the same time retaining the strength or toughness of the bulk materials. Energetic-ion bombardment can be used to modify the structural and chemical properties of surfaces or applied coatings. Ion-implantation has been used for many years, and recently, other surface-modification techniques, among them ion-beam mixing and ion-beam-assisted deposition, have attracted attention because they permit application of highly adherent lubricious and wear-resistant films. In this paper, ion-beam techniques are described from the viewpoint of ion-surface interactions, and some avenues for the engineering of tribological surfaces are presented. 100 refs., 4 figs.

  15. Deposition of SiNx Thin Film Using μ-SLAN Surface Wave Plasma Source

    NASA Astrophysics Data System (ADS)

    Ying-Yu, Xu; Takuya, Ogishima; Dariusz, Korzec; Yoichiro, Nakanishi; Yoshinori, Hatanaka

    1998-10-01

    Remote plasma CVD method has been used in fabrication of high quality thin films. It is a useful method in decreasing damage from ion bombardment and in analysis of film formation mechanism. In our research, as the film deposition rate depends on neutral radical density, hence high-density plasma is needed for high-speed deposition. In this research, a μ-SLAN (Slot ANtenna) microwave surface wave plasma source was adapted for thin film deposition. The μ-SLAN is an efficient plasma generator in which microwave power is coupled from a ring cavity with several slots around quartz discharge tube. We measured parameters of argon plasma along the discharge tube by a double Langmuir probe. The electron density was measured as about 10^11 cm-3 at an axial position of 43 cm from ring cavity, a microwave power of 500 W and a pressure of 0.5 torr. Using μ-SLAN, SiNx thin film was deposited and high deposition rate was obtained. The highest deposition rate of 280 nm/min was obtained for plasma gas containing 15% of hydrogen in nitrogen with the pressure and power of 1.5 torr and 500 W respectively.

  16. Modified chemical deposition and physico-chemical properties of copper(I) selenide thin films

    NASA Astrophysics Data System (ADS)

    Pathan, H. M.; Lokhande, C. D.; Amalnerkar, D. P.; Seth, T.

    2003-04-01

    Semiconducting stoichiometric copper(I) selenide (Cu 2Se) thin films were deposited onto glass substrate using a modified chemical method. The deposition conditions such as concentration and pH of cation and anionic precursor solutions, immersion and rinsing times and number of immersions, etc. were optimized for Cu 2Se films. The characterization of Cu 2Se films was carried out by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Rutherford back scattering (RBS), optical absorption/transmittance, electrical resistivity and thermoemf measurement techniques. The XRD shows the formation of copper(I) selenide with monoclinic crystal structure. Absorbance of the Cu 2Se thin film is found to be high (10 4 cm -1) with optical band gap of 2.35 eV. The electrical resistivity is of the order of 10 -1 Ω cm. Film exhibits p-type electrical conductivity.

  17. Preparation of vanadium oxide thin films modified with Ag using a hybrid deposition configuration

    NASA Astrophysics Data System (ADS)

    Gonzalez-Zavala, F.; Escobar-Alarcón, L.; Solís-Casados, D. A.; Rivera-Rodríguez, C.; Basurto, R.; Haro-Poniatowski, E.

    2016-04-01

    The application of a hybrid deposition configuration, formed by the interaction of a laser ablation plasma with a flux of atomic vapor, to deposit vanadium oxide thin films modified with different amounts of silver, is reported. The effect of the amount of Ag incorporated in the films on their structural, morphological, compositional and optical properties was studied. The obtained results reveal that films with variable Ag content from 11.7 to 24.6 at.% were obtained. Depending on the silver content, the samples show very different surface morphologies. Optical characterization indicates the presence of nanostructures of Ag. Thin films containing silver exhibit better photocatalytic performances than unmodified V2O5 films. Raman spectra reveal that as the silver content is increased, the signals associated with V2O5 disappear and new modes attributed mainly to silver vanadates appear suggesting the formation of ternary compounds.

  18. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    NASA Astrophysics Data System (ADS)

    Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

    2009-11-01

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

  19. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    NASA Astrophysics Data System (ADS)

    Mistry, Bhaumik V.; Joshi, U. S.

    2016-05-01

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10-3 V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×1018 cm3, while the Hall mobility of the IGZO thin film was 16 cm2 V-1S-1.

  20. ZnS thin films deposition by thermal evaporation for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Benyahia, K.; Benhaya, A.; Aida, M. S.

    2015-10-01

    ZnS thin films were deposited on glass substrates by thermal evaporation from millimetric crystals of ZnS. The structural, compositional and optical properties of the films are studied by X-ray diffraction, SEM microscopy, and UV-VIS spectroscopy. The obtained results show that the films are pin hole free and have a cubic zinc blend structure with (111) preferential orientation. The estimated optical band gap is 3.5 eV and the refractive index in the visible wavelength ranges from 2.5 to 1.8. The good cubic structure obtained for thin layers enabled us to conclude that the prepared ZnS films may have application as buffer layer in replacement of the harmful CdS in CIGS thin film solar cells or as an antireflection coating in silicon-based solar cells.

  1. Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

    SciTech Connect

    Sadananda Kumar, N. Bangera, Kasturi V.; Shivakumar, G. K.

    2015-07-15

    Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

  2. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect

    Wang, Yuhan; Comes, Ryan B.; Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2015-03-01

    Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.

  3. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    NASA Astrophysics Data System (ADS)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  4. Deposition and Characterization of Thin Films on Metallic Substrates

    NASA Technical Reports Server (NTRS)

    Gatica, Jorge E.

    2005-01-01

    A CVD method was successfully developed to produce conversion coatings on aluminum alloys surfaces with reproducible results with a variety of precursors. A well defined protocol to prepare the precursor solutions formulated in a previous research was extended to other additives. It was demonstrated that solutions prepared following such a protocol could be used to systematically generate protective coatings onto aluminum surfaces. Experiments with a variety of formulations revealed that a refined deposition protocol yields reproducible conversion coatings of controlled composition. A preliminary correlation between solution formulations and successful precursors was derived. Coatings were tested for adhesion properties enhancement for commercial paints. A standard testing method was followed and clear trends were identified. Only one precursors was tested systematically. Anticipated work on other precursors should allow a better characterization of the effect of intermetallics on the production of conversion/protective coatings on metals and ceramics. The significance of this work was the practical demonstration that chemical vapor deposition (CVD) techniques can be used to systematically generate protective/conversion coating on non-ferrous surfaces. In order to become an effective approach to replace chromate-based pre- treatment processes, namely in the aerospace or automobile industry, the process parameters must be defined more precisely. Moreover, the feasibility of scale-up designs necessitates a more comprehensive characterization of the fluid flow, transport phenomena, and chemical kinetics interacting in the process. Kinetic characterization showed a significantly different effect of magnesium-based precursors when compared to iron-based precursors. Future work will concentrate on refining the process through computer simulations and further experimental studies on the effect of other transition metals to induce deposition of conversion/protective films

  5. Microstructure and surface morphology of YSZ thin films deposited by e-beam technique

    NASA Astrophysics Data System (ADS)

    Laukaitis, G.; Dudonis, J.; Milčius, D.

    2008-03-01

    In present study yttrium-stabilized zirconia (YSZ) thin films were deposited on optical quartz (amorphous SiO 2), porous Ni-YSZ and crystalline Alloy 600 (Fe-Ni-Cr) substrates using e-beam deposition technique and controlling technological parameters: substrate temperature and electron gun power which influence thin-film deposition mechanism. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin-film structure and surface morphology depend on these parameters. It was found that the crystallite size, roughness and growth mechanism of YSZ thin films are influenced by electron gun power. To clarify the experimental results, YSZ thin-film formation as well evolution of surface roughness at its initial growing stages were analyzed. The evolution of surface roughness could be explained by the processes of surface mobility of adatoms and coalescence of islands. The analysis of these experimental results explain that surface roughness dependence on substrate temperature and electron gun power non-monotonous which could result from diffusivity of adatoms and the amount of atomic clusters in the gas stream of evaporated material.

  6. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.

    PubMed

    Shih, Huan-Yu; Lin, Ming-Chih; Chen, Liang-Yih; Chen, Miin-Jang

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH3. The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate.

  7. Chemical vapor deposition of diamond thin films on titanium silicon carbide

    NASA Astrophysics Data System (ADS)

    Yang, Songlan

    2008-10-01

    Chemical vapor deposition (CVD) has been the main method for synthesizing diamond thin films on hetero substrate materials since 1980s. It has been well acknowledged that both nucleation and growth of diamond on non-diamond surfaces without pre-treatment are very difficult and slow. Furthermore, the weak adhesion between the diamond thin films and substrates has been a major problem for widespread application of diamond thin films. Up to now, Si has been the most frequently used substrate for the study of diamond thin films and various methods, including bias and diamond powder scratching, have been applied to enhance diamond nucleation density. In the present study, nucleation and growth of diamond thin films on Ti3SiC2, a newly developed ceramic-metallic material, using Microwave Plasma Enhanced (MPE) and Hot- Filament (HF) CVD reactors were carried out. In addition, synchrotron-based Near Edge Extended X-Ray Absorption Fine Structure Spectroscopy (NEXAFS) was used to identify the electronic and chemical structures of various NCD films. The results from MPECVD showed that a much higher diamond nucleation density and a much higher film growth rate can be obtained on Ti3SiC2 compared with on Si. Consequently, nanocrystalline diamond (NCD) thin films were feasibly synthesized on Ti3SiC2 under the typical conditions for microcrystalline diamond film synthesis. Furthermore, the diamond films on Ti3SiC 2 exhibited better adhesion than on Si. The early stage growth of diamond thin films on Ti3SiC2 by HFCVD indicated that a nanowhisker-like diamond-graphite composite layer, different from diamond nucleation on Si, initially formed on the surface of Ti3SiC2, which resulted in high diamond nucleation density. These results indicate that Ti3SiC 2 has great potentials to be used both as substrates and interlayers on metals for diamond thin film deposition and application. This research may greatly expand the tribological application of both Ti3SiC 2 and diamond thin films

  8. Differential AC chip calorimeter for in situ investigation of vapor deposited thin films

    NASA Astrophysics Data System (ADS)

    Ahrenberg, Mathias; Schick, Christoph; Huth, Heiko; Schoifet, Evgeni; Ediger, Mark; Whitaker, Katie

    2012-02-01

    Physical vapor deposition (PVD) can be used to produce thin films with particular material properties like extraordinarily stable glasses of organic molecules. We describe an AC chip calorimeter for in-situ heat capacity measurements of as-deposited nanometer thin films of organic glass formers. The calorimetric system is based on a differential AC chip calorimeter which is placed in the vacuum chamber for physical vapor deposition. The sample is directly deposited onto one calorimetric chip sensor while the other sensor is protected against deposition. The device and the temperature calibration procedure are described. The latter makes use of the phase transitions of cyclopentane and the frequency dependence of the dynamic glass transition of toluene and ethylbenzene. Sample thickness determination is based on a finite element modeling (FEM) of the sensor sample arrangement. A layer of toluene was added to the sample sensor and its thickness was varied in an iterative way until the model fits the experimental data.

  9. Differential alternating current chip calorimeter for in situ investigation of vapor-deposited thin films

    NASA Astrophysics Data System (ADS)

    Ahrenberg, M.; Shoifet, E.; Whitaker, K. R.; Huth, H.; Ediger, M. D.; Schick, C.

    2012-03-01

    Physical vapor deposition can be used to produce thin films with interesting material properties including extraordinarily stable organic glasses. We describe an ac chip calorimeter for in situ heat capacity measurements of as-deposited nanometer thin films of organic glass formers. The calorimetric system is based on a differential ac chip calorimeter which is placed in the vacuum chamber for physical vapor deposition. The sample is directly deposited onto one calorimetric chip sensor while the other sensor is protected against deposition. The device and the temperature calibration procedure are described. The latter makes use of the phase transitions of cyclopentane and the frequency dependence of the dynamic glass transition of toluene and ethylbenzene. Sample thickness determination is based on a finite element modeling of the sensor sample arrangement. In the modeling, a layer of toluene was added to the sample sensor and its thickness was varied in an iterative way until the model fit the experimental data.

  10. Nanocrystalline CuInSSe thin films by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Shrotriya, Vipin; Rajaram, P.

    2016-05-01

    Crystalline CuInSSe thin films have been deposited on glass substrate by chemical bath deposition technique. The CuCl2, InCl3, thiourea and SeO2 were used as source materials for the Cu2+, In3+, S2- and Se2- ions and the Cu/In ratio was kept at 1.0. EDC was used as a complexing agent. The XRD, Scanning Electron Microscope (SEM), Energy Dispersive Analysis of X-Ray (EDAX) and Optical transmission studies were used for structural analysis, surface morphology, elemental analysis and optical band gap, of the grown thin films respectively. The deposition parameters such as pH, deposition temperature and deposition time were optimized.

  11. Effects of Post-Deposition Annealing on the Properties of Calcium Manganese Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Ferrone, Natalie; Chaudhry, Adeel; Hart, Cacie; Lawson, Bridget; Houston, David; Neubauer, Samuel; Johnson, Anthony; Schaefer, David; Kolagani, Rajeswari

    We will present our results on the effects of post-deposition annealing on the structural and electrical properties of CaMnO3-d thin films grown by Pulsed Laser deposition. The thin films are epitaxially grown on (100) LaAlO3 which has larger in-plane lattice parameters than that of bulk CaMnO3, which leads to bi-axial tensile strain in the thin films. Results from our laboratory show that bi-axial tensile strain leads to low resistivity in thinner films, the resistivity increasing with increasing thickness. These results are suggestive of a coupling between strain and oxygen stoichiometry in the thin films. We have investigated the effects of post-deposition annealing in various gas ambients towards the goal of understanding the effects of relaxation and oxygen stoichiometric changes. We will present a comparison of the structural and electrical properties of as-grown and post-annealed films over a range of thicknesses. Support from Towson University Office of Undergraduate Research, Fisher Endowment Grant & Undergraduate Research Grant from the Fisher College of Science & Mathematics, Seed Funding Grant from the School of Emerging technologies, & NSF Grant ECCS 112856.

  12. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

    2016-08-01

    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  13. Characterization Of Fe{sub 1-x}Co{sub x}Si Thin Films Deposited Via Pulsed Laser Deposition

    SciTech Connect

    Manyala, N.; Ngom, Balla; Kana-Kana, J. B.; Bucher, Remy; Maaza, M.; Di Tusa, J. F.

    2008-09-23

    We report on the structural and morphological characterization of B20 cubic structure Fe{sub 1-x}Co{sub x}Si thin films grown by pulsed laser deposition for the concentration range 0{<=}x{<=}0.3 deposited on Si (111) substrate. The x-ray diffraction, Rutherford back scattering (RBS), Scanning Electron microscopy (SEM) and Atomic force microscopy (AFM) of the films show that all the films are single phase B20 cubic structure with concentrations close to expected values, very smooth and dense with surface roughness less than 0.8 nm.

  14. Effects of Buffer Salt Concentration on the Dominated Deposition Mechanism and Optical Characteristics of Chemically Deposited Cadmium Sulfide Thin Films

    NASA Astrophysics Data System (ADS)

    Kakhaki, Z. Makhdoumi; Youzbashi, A.; Sangpour, P.; Kazemzadeh, A.; Naderi, N.; Bazargan, A. M.

    2016-02-01

    Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH2)2) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv-visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20nm to 30nm by the increase of concentration of NH4NO3 from 0.5M to 2.5M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25-2.4eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400nm and 500nm which are attributed to violet and band-to-band emissions, respectively.

  15. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition.

    PubMed

    Wang, Zi-Yi; Zhang, Rong-Jun; Lu, Hong-Liang; Chen, Xin; Sun, Yan; Zhang, Yun; Wei, Yan-Feng; Xu, Ji-Ping; Wang, Song-You; Zheng, Yu-Xiang; Chen, Liang-Yao

    2015-01-01

    The aluminum oxide (Al2O3) thin films with various thicknesses under 50 nm were deposited by atomic layer deposition (ALD) on silicon substrate. The surface topography investigated by atomic force microscopy (AFM) revealed that the samples were smooth and crack-free. The ellipsometric spectra of Al2O3 thin films were measured and analyzed before and after annealing in nitrogen condition in the wavelength range from 250 to 1,000 nm, respectively. The refractive index of Al2O3 thin films was described by Cauchy model and the ellipsometric spectra data were fitted to a five-medium model consisting of Si substrate/SiO2 layer/Al2O3 layer/surface roughness/air ambient structure. It is found that the refractive index of Al2O3 thin films decrease with increasing film thickness and the changing trend revised after annealing. The phenomenon is believed to arise from the mechanical stress in ALD-Al2O3 thin films. A thickness transition is also found by transmission electron microscopy (TEM) and SE after 900°C annealing. PMID:25852343

  16. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  17. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition.

    PubMed

    D'Arcy, Julio M; Tran, Henry D; Stieg, Adam Z; Gimzewski, James K; Kaner, Richard B

    2012-05-21

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.

  18. Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gyorgy, E.; Grigorescu, S.; Socol, G.; Mihailescu, I. N.; Janackovic, D.; Dindune, A.; Kanepe, Z.; Palcevskis, E.; Zdrentu, E. L.; Petrescu, S. M.

    2007-07-01

    Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO 2 doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF * ( λ = 248 nm, τ ≥ 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 °C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

  19. Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tripathi, T. S.; Yadav, C. S.; Karppinen, M.

    2016-04-01

    We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD) from Cu(thd)2, Cr(acac)3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

  20. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    NASA Astrophysics Data System (ADS)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  1. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  2. Investigation on single walled carbon nanotube thin films deposited by Langmuir Blodgett method

    SciTech Connect

    Vishalli, Dharamvir, Keya; Kaur, Ramneek; Raina, K. K.

    2015-05-15

    Langmuir Blodgett is a technique to deposit a homogeneous film with a fine control over thickness and molecular organization. Thin films of functionalized SWCNTs have been prepared by Langmuir Blodgett method. The good surface spreading properties of SWCNTs at air/water interface are indicated by surface pressure-area isotherm and the monolayer formed on water surface is transferred onto the quartz substrate by vertical dipping. A multilayer film is thus obtained in a layer by layer manner. The film is characterized by Atomic Force Microscope (AFM), UV-Vis-NIR spectroscopy and FTIR.AFM shows the surface morphology of the deposited film. UV-Vis-NIR spectroscopy shows the characteristic peaks of semiconducting SWCNTs. The uniformity of LB film can be used further in understanding the optical and electrical behavior of these materials.

  3. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    SciTech Connect

    Warwick, Michael E.A.; Binions, Russell

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research. - Graphical abstract: Schematic demonstration of the effect of thermochromic glazing on solar radiation (red arrow represents IR radiation, black arrow represents all other solar radiation). - Highlights: • Vanadium dioxide thin films for energy efficient glazing. • Reviews chemical vapour deposition techniques. • Latest results for thin film deposition for vanadium dioxide.

  4. Pulsed laser deposition and characterization of conductive RuO{sub 2} thin films

    SciTech Connect

    Iembo, A.; Fuso, F.; Arimondo, E.; Ciofi, C.; Pennelli, G.; Curro, G.M.; Neri, F.; Allegrini, M. |

    1997-06-01

    RuO{sub 2} thin films have been produced on silicon-based substrates by {ital in situ} pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO{sub 2}-substrate interface is very thin ({approx}3 nm), since not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.{copyright} {ital 1997 Materials Research Society.}

  5. Modified chemical deposition and physico-chemical properties of copper sulphide (Cu 2S) thin films

    NASA Astrophysics Data System (ADS)

    Pathan, H. M.; Desai, J. D.; Lokhande, C. D.

    2002-12-01

    Semiconducting stoichiometric copper sulphide (Cu 2S) thin films were deposited using modified chemical deposition method. The preparative conditions such as concentration, pH of cationic and anionic precursors, adsorption, reaction and rinsing time durations, complextant, etc. were optimized to get stoichiometric Cu 2S thin films. The structural, surface morphological, compositional, optical and electrical characterization were carried out with the help of X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Rutherford back scattering (RBS), optical absorbance/transmittance, electrical resistivity and thermoemf studies. The films were found to be nanocrystalline. Absorbance of the film was high (10 4 cm -1) with optical band gap of 2.35 eV. The electrical resistivity was of the order of 10 -2 Ω cm with p-type electrical conductivity.

  6. Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

    NASA Astrophysics Data System (ADS)

    Radha, R.; Sakthivelu, A.; Pradhabhan, D.

    2016-08-01

    Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

  7. Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films

    SciTech Connect

    Prenzel, Marina; Kortmann, Annika; Keudell, Achim von; Arcos, Teresa de los; Winter, Joerg

    2012-11-15

    Al{sub 2}O{sub 3} thin films, either amorphous or of varying degrees of crystallinity, were deposited by two-frequency radio-frequency magnetron sputtering. Film crystallinity was investigated by Fourier transform infrared spectroscopy and X-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) was employed to determine the amount of Ar naturally trapped within the films during the deposition process. A clear correlation was found between the existence of crystalline phases, as determined by XRD, and a shift towards lower binding energy positions of the Ar2p core levels of embedded gas. The shift is due to differences in the local Al{sub 2}O{sub 3} matrix (amorphous or crystalline) of the embedded gas, thus, providing an XPS fingerprint that can be used to qualitatively determine the presence or absence of crystalline phases in very thin films.

  8. Vacancies ordered in screw form (VOSF) and layered indium selenide thin film deposition by laser back ablation

    NASA Astrophysics Data System (ADS)

    Beck, Kenneth M.; Wiley, William R.; Venkatasubramanian, Eswaranand; Ohuchi, Fumio

    2009-09-01

    Indium selenide thin films are important due to their applications in non-volatile memory and solar cells. In this work, we present an initial study of a new application of deposition-site selective laser back ablation (LBA) for making thin films of In 2Se 3. Invacuo annealing and subsequent characterization of the films by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that control of substrate temperature during deposition and post-deposition annealing temperature is critical in determining the phase and composition of the films. The initial laser fluence and target film thickness determine the amount of material deposited onto the substrate.

  9. Vacancies Ordered in Screw Form (VOSF) and Layered Indium Selenide Thin Film Deposition by Laser Back Ablation

    SciTech Connect

    Beck, Kenneth M.; Wiley, William R.; Venkatasubramanian, Eswaranand; Ohuchi, Fumio S.

    2009-09-30

    Indium selenide thin films are important due to their applications in non-volatile memory and solar cells. In this work, we present an initial study of a new application of deposition-site selective laser back ablation (LBA) for making thin films of In2Se3. In-vacuo annealing and subsequent characterization of the films by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that control of substrate temperature during deposition and post-deposition annealing temperature is critical in determining the phase and composition of the films. The initial laser fluence and target film thickness determine the amount of material deposited onto the substrate.

  10. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    NASA Astrophysics Data System (ADS)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  11. Biomimetic formation of titania thin films: effect of amino acids on the deposition process.

    PubMed

    Durupthy, Olivier; Jeurgens, Lars P H; Bill, Joachim

    2011-05-01

    Different types of amino acids have been used as additives to control the aqueous deposition of titanium dioxide thin films on single-crystal Si wafers. Thin titania films can be obtained through a chemical bath deposition (CBD) process using TiCl₄ as a precursor in an aqueous solution at temperatures below 100 °C. The addition of amino acids to the deposition solution was shown to reduce the thickness and roughness of the films and to increase their density. These protein building blocks were employed to modify the deposition rate as well as the size of aggregates that form the film. The thickness, crystallinity, morphology and composition of the grown films were characterized by a variety of techniques, including XRD, XPS, AFM and SEM. The consequences of the type of the amino acid additive (and its concentration in the solution) on the microstructural evolutions of the deposed films are thus revealed and discussed on the basis of the organic-inorganic interactions in solution and at the film surface. PMID:21480641

  12. FUV reflectometer for in-situ characterization of thin films deposited under UHV

    NASA Astrophysics Data System (ADS)

    Larruquert, Juan I.; Aznarez, Jose A.; Mendez, Jose A.

    2000-12-01

    A far UV (FUV) reflectometer was developed at the Metal Optics Laboratory (Instituto de Fisica Aplicada, CIC, Madrid) for in situ reflectance as well as transmittance measurements of ultra high vacuum (UHV) deposited thin films. The spectral region covered by the reflectometer is 50 - 200 nm. The angle of incidence can be continuously changed from 3 degrees to 87 degrees. The sample holder is provided with two perpendicular rotation axes to perform reflectance measurements in two perpendicular planes of incidence. Thin films of the materials to be investigated can be deposited by evaporation in an adjacent chamber that is connected to the reflectometer through a gate valve and a long linear/rotary feedthrough. In this way, thin films are deposited and their reflectance is measured in UHV conditions without breaking vacuum. Two different deposition systems, including an electron gun and resistive evaporation sources, can be used for multilayer deposition. The instrument is furnished with a substrate heating system for deposition on a heated substrate, and/or for post-deposition sample annealing. A gas entrance system allows exposing the sample to controlled doses of different gases to analyze their effect over the sample reflectance. An atomic oxygen source is also installed in the reflectometer for aging simulations of in orbit operating optical instruments. The instrument is particularly useful to investigate the effect on the sample FUV reflectance of exposure to controlled atmospheres and other in situ treatments.

  13. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  14. Homogeneous, dual layer, solid state, thin film deposition for structural and/or electrochemical characteristics

    DOEpatents

    Pitts, J. Roland; Lee, Se-Hee; Tracy, C. Edwin; Li, Wenming

    2014-04-08

    Solid state, thin film, electrochemical devices (10) and methods of making the same are disclosed. An exemplary device 10 includes at least one electrode (14) and an electrolyte (16) deposited on the electrode (14). The electrolyte (16) includes at least two homogenous layers of discrete physical properties. The two homogenous layers comprise a first dense layer (15) and a second porous layer (16).

  15. Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Miyata, Toshihiro; Nomoto, Jun-ichi

    2012-04-01

    This paper describes the development of transparent conducting impurity-doped ZnO thin films that would be appropriate for applications as transparent electrodes in thin-film solar cells. Transparent conducting Al-, B- and Ga-doped ZnO (AZO, BZO and GZO) thin films were prepared in a thickness range from 500 to 2000 nm on glass substrates at 200°C using various physical deposition methods: BZO films with vacuum arc plasma evaporation, AZO and GZO films with different types of magnetron sputtering depositions (MSDs) and all films with pulsed laser deposition (PLD). The suitability and stability of the electrical properties and, in addition, the suitability of the light scattering characteristics and surface texture formation were investigated in the prepared thin films. In particular, the suitability and stability evaluation was focused on the use of AZO, BZO and GZO thin films prepared by doping each impurity at an appropriate content to attain the lowest resistivity. The higher Hall mobility obtained in impurity-doped ZnO thin films with a resistivity on the order of 10-4 Ωcm was related more to the content, i.e., the obtained carrier concentration, rather than the kind of impurity doped into the films. The stability of resistivity of the BZO thin films in long-term moisture-resistance tests (in air at 85% relative humidity and 85°C) was found to be lower than that of the AZO and GZO thin films. The surface texture formation was carried out by wet-chemical etching (in a 0.1% HCl solution at 25°C) conducted either before or after being heat-treated either with rapid thermal annealing (RTA) or without RTA. The suitability of the light scattering characteristics and the surface texture formation obtainable by wet-chemical etching (for use in transparent electrode applications) was considerably dependent on the deposition method used as well as whether the wet-chemical etching was conducted with or without RTA. A significant improvement of both transmittance and

  16. Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

    NASA Astrophysics Data System (ADS)

    Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Körner, Timo; Herbort, Michael; Stritzker, Bernd

    2006-12-01

    Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi3Fe5O12 (BIG) thin films on (100) and (111) Gd3Ga5O12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi /Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films.

  17. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    NASA Astrophysics Data System (ADS)

    Li, Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-04-01

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al2O3, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al2O3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  18. Chemical bath deposition and characterization of electrochromic thin films of sodium vanadium bronzes

    SciTech Connect

    Najdoski, Metodija; Koleva, Violeta; Demiri, Sani

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We report a new chemical bath method for the deposition of vanadium bronze thin films. Black-Right-Pointing-Pointer The films are phase mixture of NaV{sub 6}O{sub 15} and Na{sub 1.1}V{sub 3}O{sub 7.9} with 10.58% lattice water. Black-Right-Pointing-Pointer The as-deposited vanadium bronze films exhibit two-step electrochromism. Black-Right-Pointing-Pointer They change their yellow-orange color to green and then from green to blue color. Black-Right-Pointing-Pointer The method allows the preparation of films on substrates with low melting point. -- Abstract: Thin yellow-orange films of sodium vanadium oxide bronzes have been prepared from a sodium-vanadium solution (1:1) at 75 Degree-Sign C and pH = 3. The composition, structure and morphology of the films have been studied by XRD, IR spectroscopy, TG and SEM-EDX analyses. It has been established that the prepared films are a phase mixture of hydrated NaV{sub 6}O{sub 15} (predominant component) and Na{sub 1.1}V{sub 3}O{sub 7.9} with total water content of 10.58%. The sodium vanadium bronze thin films exhibit two-step electrochromism followed by color change from yellow-orange to green, and then from green to blue. The cyclic voltammetry measurements on the as-deposited and annealed vanadium bronze films reveal the existence of different oxidation/reduction vanadium sites which make these films suitable for electrochromic devices. The annealing of the films at 400 Degree-Sign C changes the composition, optical and electrochemical properties.

  19. Chromium carbide thin films deposited by ultra-short pulse laser deposition

    NASA Astrophysics Data System (ADS)

    Teghil, R.; Santagata, A.; De Bonis, A.; Galasso, A.; Villani, P.

    2009-06-01

    Pulsed laser deposition performed by a laser with a pulse duration of 250 fs has been used to deposit films from a Cr 3C 2 target. Due to the different processes involved in the laser ablation when it is performed by an ultra-short pulse source instead of a conventional short pulse one, it has been possible to obtain in vacuum films containing only one type of carbide, Cr 3C 2, as shown by X-ray photoelectron spectroscopy. On the other hand, Cr 3C 2 is not the only component of the films, since a large amount of amorphous carbon is also present. The films, deposited at room temperature, are amorphous and seem to be formed by the coalescence of a large number of particles with nanometric size. The film composition can be explained in terms of thermal evaporation from particles ejected from the target.

  20. Optical Thin Films Prepared by Ion-Assisted and Ultrasound-Assisted Deposition.

    NASA Astrophysics Data System (ADS)

    Hwangbo, Chang Kwon

    Optical, electrical, and microstructural effects of Ar ion bombardment and Ar incorporation on thermally evaporated Ag and Al thin films were investigated. The results show that as the momentum supplied to the growing films by the bombarding Ar ions per arriving metal atom increases, refractive index at 632.8 nm increases and extinction coefficient decreases, lattice spacing expands, grain size decreases, electrical resistivity increases, and trapped Ar increases slightly. The reversal of stress from tensile to compressive in Ag films requires a threshold level of momentum. The increase in electrical resistivity is related to the increase in the void fraction, decrease in the grain size, and increase in trapped Ar in both types of films. Many of these properties correlate well with the momentum transferred, suggesting that the momentum is an important physical parameter in describing the influence of ion beams on growing thin films and determining the characteristics of thin metal films prepared by ion-assisted deposition (IAD). With a low energy ion beam, the Ar concentration in IAD Ag films was negligible. When the bombarded film thickness was less than 5 nm, the electrical resistivity of IAD Ag films tended to decrease slightly from that of the non-IAD film. Using the Bruggeman effective medium theory, a formula for the void fraction at any given wavelength was derived. We investigated optical properties, stoichiometry, chemical bonding states, and structure of aluminum oxynitride thin films prepared by reactive ion-assisted deposition. Variations of optical constants and chemical bonding states are related to the stoichiometry. We found that our amorphous aluminum oxynitride film is not simply a mixture of aluminum oxide and nitride but a compound. A rugate filter using a step -index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfilled oxygen pressure as the sole variable. The effects of

  1. Formation of Diamond-like Carbon Thin Films by Ion Beam Assisted Deposition Method

    NASA Astrophysics Data System (ADS)

    Nakamura, Isao; Takano, Ichiro; Sasaki, Michiko; Takashika, Masaru; Kasiwagi, Tomohumi; Sawada, Yohio

    The mechanical properties of diamond-like carbon (DLC) thin films on SUS304 substrate have been studied. DLC thin films were prepared by the ion beam assisted deposition method. In this method, He+ ion irradiation was carried out in a C2H4 gas atmosphere. He+ ions were accelerated at an energy of 15 keV, and the ion beam current densities were changed from 10 to 100 μA/cm2. Atomic concentration and structure of the films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. The mechanical properties of hardness and friction coefficient were determined using the Knoop hardness tester and the pin-on-disk tribometer. The DLC thin films had amorphous structure that composed chiefly of graphite and disorder of graphite states. The Knoop hardness of the films increased with increasing He+ ion current density, and the film prepared at a current density of 80 μA/cm2 showed the maximum Knoop hardness value of 890 kgf/cm2. The friction coefficient of the film prepared at a current density of 60 μA/cm2 indicated lower value than that of the other current densities. From these results, it was cleared that the mechanical properties and structure of DLC thin films were greatly affected by the He+ ion beam current density.

  2. Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

    NASA Astrophysics Data System (ADS)

    Ehsani, M. H.; Mehrabad, M. Jalali; Kameli, P.

    2016-11-01

    In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films.

  3. Zr, ZrN and Zr/Al Thin Films Deposition Using Arc Evaporation and Annealing

    NASA Astrophysics Data System (ADS)

    Čyvienė, J.; Dudonis, J.

    2008-10-01

    The chemical reactions are widely used for the layers of different composition formation. However, synthesis mechanism is a complicated process in thin films/layers system, and is not completely studied. The purpose of this paper was to analyze the kinetics of chemical compounds in reaction, to produce ZrO2 thin films using arc evaporation and annealing (post-deposition), and to analyze them. The pure zirconium (Zr) and zirconium nitride (ZrN) were deposited using arc evaporation. 10% mol of aluminum was evaporated on a few Zr films. All deposited films were annealed in the air atmosphere gradually changing the temperature from 400ºC to 1100ºC in order to produce ZrO2 films. The formation processes of the new phase were studied. Activation energy of the reactions was calculated. Structural properties were measured using X-ray diffraction, optical properties - using ellipsometry. Tetragonal phase of ZrO2 was obtained in the annealing process of ZrO2/Al thin film in the air atmosphere of 800ºC.

  4. Studies on Nanostructure Aluminium Thin Film Coatings Deposited using DC magnetron Sputtering Process

    NASA Astrophysics Data System (ADS)

    Singh M, Muralidhar; G, Vijaya; MS, Krupashankara; Sridhara, B. K.; Shridhar, T. N.

    2016-09-01

    Nanostructured thin film metallic coatings has become an area of intense research particularly in applications related solar, sensor technologies and many other optical applications such as laser windows, mirrors and reflectors. Thin film metallic coatings were deposited using DC magnetron sputtering process. The deposition rate was varied to study its influence on optical behavior of Aluminum thin films at a different argon flow rate. Studies on the optical response of these nanostructure thin film coatings were characterized using UV-VIS-NIR spectrophotometer with integrating sphere in the wavelength range of (250-2500nm) and Surface morphology were carried out using atomic force microscope with roughness ranging from 2 to 20nm and thickness was measured using Dektak measuring instrument. The reflection behavior of aluminium coatings on polycarbonate substrates has been evaluated. UV-VIS-NIR Spectrophotometer analysis indicates higher reflectance of 96% for all the films in the wavelength range of 250 nm to 2500 nm. Nano indentation study revealed that there was a considerable change in hardness values of the films prepared at different conditions.

  5. Metalcone Chemistry: In pursuit of improved mechanical properties in thin film deposition

    NASA Astrophysics Data System (ADS)

    Hall, Robert A.

    Atomic Layer Deposition (ALD) and its subset, Molecular layer deposition (MLD), is a thin film deposition technique using alternating self-limiting precursors to grow thin films on a substrates. Recent research has expanded MLD to use reactive metal alkyls/halides and organic fragments containing alcohol groups such as ethylene glycol for use in protective barriers. Unfortunately using ethylene glycol as a precursor causes film stability issues and does not provide adequate mechanical properties for projected uses. The current research looks into the investigation of using different metal alkyls and metal halides with the trifunctional precursor glycerol. The three main films investigated were the AlGL using trimethylaluminum and glycerol, ZnGL using diethyl zinc and glycerol and TIGL using titanium (IV) chloride and glycerol. The films were investigated using quartz crystal microbalance, X-ray reflectivity, and spectroscopic ellipsometry for characterization of their film growth. All films exhibited linear growth at a range of temperatures above 130°C with AlGL, ZnGL and TiGL displaying a growth rate at 150°C of ˜2.34A/cycle, ˜1.29A/cycle, and ˜2.2A/cycle respectfully. Initially film growth was investigated in situ using quartz crystal microbalance and then the growth rates confirmed ex situ using X-ray reflectivity. Once the film growth and mechanism were investigated, the mechanical properties were investigated to determine if there was an improvement in cross-linking in the films. The mechanical properties of these MLD films were also investigated using a mechanical testing system and nanoindenter. The mechanical properties for AlGL and ZnGL showed a large improvement from 0.69% to 1.2% for their critical tensile strain compared to previous MLD films. The films also showed an increase in mechanical properties from their nanoindentation results consistent with an increase in cross-linking.

  6. Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

    NASA Astrophysics Data System (ADS)

    Cattin, L.; Reguig, B. A.; Khelil, A.; Morsli, M.; Benchouk, K.; Bernède, J. C.

    2008-07-01

    NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl 2·6H 2O), nickel nitrate hexahydrate (Ni(NO 3) 2·6H 2O), nickel hydroxide hexahydrate (Ni(OH) 2·6H 2O), nickel sulfate tetrahydrate (NiSO 4·4H 2O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 °C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl 2 and Ni(NO 3) 2 precursors. These films have been post-annealed at 425 °C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10 -2 Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

  7. Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

    SciTech Connect

    Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi

    2015-09-01

    We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

  8. Electrochemical impedance analysis of spray deposited CZTS thin film: Effect of Se introduction

    NASA Astrophysics Data System (ADS)

    Patil, Swati J.; Lokhande, Vaibhav C.; Lee, Dong-Weon; Lokhande, Chandrakant D.

    2016-08-01

    The present work deals with electrochemical impedance analysis of spray deposited Cu2ZnSnS4 (CZTS) thin films grown on fluorine doped tin oxide (FTO) substrates and effect of post Se introduction. The CZTS thin films are characterized using X-ray diffraction (XRD), X-Ray photo spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and UV-Vis spectroscopy techniques. The electrochemical measurements are carried out using impedance analysis spectroscopy. The strong peak in XRD pattern along (112) plane confirms the Kestrite crystal structure of CZTS film. The FE-SEM analysis reveals that nanoflakes contain crack-free surface microstructure changes with post Se introucation. The optical study reveals that absorption increases with Se dipping time and observed lower band gap of 1.31 eV. Introduction of Se in CZTS film results an improvement in the grain size and surface morphology which leads to increased electrical conductivity of CZTS film.

  9. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  10. Investigation on vanadium oxide thin films deposited by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Margoni, Mudaliar Mahesh; Mathuri, S.; Ramamurthi, K.; Babu, R. Ramesh; Sethuraman, K.

    2016-05-01

    Vanadium oxide thin films were deposited at 400 °C by spray pyrolysis technique using 0.1 M aqueous precursor solution of ammonium meta vanadate (AMV) with two different pH values. X-ray diffraction results showed that the film prepared using aqueous precursor AMV solution (solution A; pH 7) is amorphous in nature and the film prepared by adding HNO3 in the AMV aqua solution A (solution B; pH 3) is polycrystalline in nature. Vanadium oxide film prepared from the precursor solution B is in the mixed phases of V2O5 and V4O7. Crystallinity is improved for the film prepared using solution B when compared to film prepared from solution A. Crystallite size, strain and dislocation density calculated for the film prepared from solution B is respectively 72.1 nm, 0.4554 × 10-3 lin.-2m-4 and 1.7263 × 1014 lin.m-2. Morphology study revealed that the size of the flakes formed on the surface of the films is influenced by the pH of the precursor solution. Average Visible Transmittance and maximum transmittance of the deposited films exceed 70% and the direct optical band gap value calculated for the films deposited from A and B solution is 1.91 eV and 2.08 eV respectively.

  11. Nucleation and strain-stabilization during organic semiconductor thin film deposition.

    PubMed

    Li, Yang; Wan, Jing; Smilgies, Detlef-M; Bouffard, Nicole; Sun, Richard; Headrick, Randall L

    2016-01-01

    The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135 °C. PMID:27600905

  12. Nucleation and strain-stabilization during organic semiconductor thin film deposition

    PubMed Central

    Li, Yang; Wan, Jing; Smilgies, Detlef-M.; Bouffard, Nicole; Sun, Richard; Headrick, Randall L.

    2016-01-01

    The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135 °C. PMID:27600905

  13. Alternate deposition and hydrogen doping technique for ZnO thin films

    NASA Astrophysics Data System (ADS)

    Myong, Seung Yeop; Lim, Koeng Su

    2006-08-01

    We propose an alternate deposition and hydrogen doping (ADHD) technique for polycrystalline hydrogen-doped ZnO thin films, which is a sublayer-by-sublayer deposition based on metalorganic chemical vapor deposition and mercury-sensitized photodecomposition of hydrogen doping gas. Compared to conventional post-deposition hydrogen doping, the ADHD process provides superior electrical conductivity, stability, and surface roughness. Photoluminescence spectra measured at 10 K reveal that the ADHD technique improves ultraviolet and violet emissions by suppressing the green and yellow emissions. Therefore, the ADHD technique is shown to be very promising aid to the manufacture of improved transparent conducting electrodes and light emitting materials.

  14. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K. K.; Srivastava, Ritu; Singh, P. K.

    2015-12-01

    Hafnium oxide (HfO2) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (Dit) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  15. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2015-07-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

  16. Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2015-09-01

    This paper presents the physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing. The thin films of thickness 500 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing thermal vacuum evaporation technique followed by post-deposition thermal annealing at temperature 450 °C. These films were subjected to the X-ray diffraction (XRD),UV-Vis spectrophotometer, source meter and atomic force microscopy (AFM) for structural, optical, electrical and surface morphological analysis respectively. The X-ray diffraction patterns reveal that the films have zinc-blende structure of single cubic phase with preferred orientation (111) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in brief. The optical band gap is found to be 1.62 eV and 1.52 eV for as-grown and annealed films respectively. The I-V characteristics show that the conductivity is decreased for annealed thin films. The AFM studies reveal that the surface roughness is observed to be increased for thermally annealed films.

  17. Influence of precursor concentration on the properties of spray deposited CdO thin films

    SciTech Connect

    Helen, S. J.; Devadason, Suganthi Mahalingam, T.

    2015-06-24

    Cadmium oxide (CdO) thin films of thickness 50 to 200 nm were deposited on glass substrates maintained at 400°C using spray pyrolysis technique. CdO thin films were deposited by varying the molar concentrations of cadmium acetate solution such as 0.01, 0.05, 0.1, 0.15 and 0.2 M. X-ray diffraction studies reveal that the films are polycrystalline in nature with cubic structure. SEM images show that the films have well defined spherical grains and grain boundaries are seen. Optical studies reveal that the films prepared from solution of 0.01 and 0.1M concentration have high transparency than films prepared at other solution concentration. The optical energy band gap value decreases from 2.50 to 2.37eV with the increase in molar concentration. Electrical studies revealed that the CdO thin film prepared using 0.1M solution possesses lowest resistivity.

  18. Properties of cathodic arc deposited high-temperature superconducting composite thin films on Ag substrates

    NASA Astrophysics Data System (ADS)

    Chae, M. S.; Simnad, M. T.; Maple, M. B.; Anders, S.; Anders, A.; Brown, I. G.

    1996-02-01

    High temperature superconducting composite thin films on Ag substrates were prepared by cathodic arc deposition of alloy precursors. The deposition technique employed a cathode comprised of a precursor alloy for the vacuum arc plasma source. The precursor alloy was prepared by multiple arc-melting of mixed metallic constituents of the high-temperature superconducting material Bi 2Sr 2CaCu 2O y (Bi2212) and 50 wt.% of Ag. The presence of silver in the precursor alloy film was expected to allow accommodation of the lattice and thermal expansion mismatch between the oxidized film and the silver substrate. The as-deposited film could be formed to practically any desirable shape before being subjected to heat treatments. Following deposition, controlled oxidation of the precursor alloy thin film on the Ag substrate was performed to produce the superconducting composite on the silver substrate. After the heat treatment, the composite film consisted of Bi2212 highly c-axis oriented normal to the Ag substrate.

  19. Layer-by-layer deposition of Ti-4,4'-oxydianiline hybrid thin films

    NASA Astrophysics Data System (ADS)

    Sood, Anjali; Sundberg, Pia; Malm, Jari; Karppinen, Maarit

    2011-05-01

    Features of the two thin-film techniques, atomic layer deposition (ALD) and molecular layer deposition (MLD), are combined to build up a stable novel inorganic-organic hybrid material of the (-Ti-N-C 6H 4-O-C 6H 4-N-) n type, deposited from successive pulses of TiCl 4 and 4,4'-oxydianiline precursors. Depositions in the temperature range of 160-230 °C resulted in unstable films, while the films obtained in the temperature range of 250-490 °C were found stable in atmospheric air. The growth rate increased with increasing temperature, from 0.3 Å per cycle at 160 °C to 1.1 Å per cycle at 490 °C.

  20. Application of closed field magnetron sputtering deposition in thin film photovoltaics

    NASA Astrophysics Data System (ADS)

    Gibson, D. R.; Waugh, A. R.; Upadhyaya, Hari M.; Nasikkar, P. S.; Walls, J. M.

    2009-08-01

    Thin film solar cell technology is highly promising to enable clean and low cost generation of solar electricity for various applications. The high efficiency, flexibility and lightweight advantages of thin film solar cells, together with stable performance and potentially low production costs, further enhance their attractiveness for both terrestrial and space applications. A distinct manufacturing advantage of thin film solar cells is the use of fast vacuum deposition methods, providing the high throughput essential to reduce manufacturing costs. However, an essential pre-requisite is the development of deposition techniques which combine capability to deposit the solar cell thin film multilayer preferably within a single vacuum cycle, removing the requirement for certain process steps to be carried out using non-vacuum wet chemistry. Moreover, process development is also needed to provide low temperature processing and low stress multilayer thin film structures which enable photovoltaic devices to be deposited on to low cost flexible polymer or metal substrates. In this paper a new sputtering tool strategy is introduced, utilising high plasma densities (~10mA.cm-2) and low ion energies, thereby lowering process temperature and film stress for deposition onto both flexible and solid substrates. The technique uses magnetrons of opposing magnetic polarity to create a "closed field" in which the plasma density is enhanced without the need for high applied voltages. A prototype batch system has been designed which employs a rotating vertical drum as the substrate carrier and a symmetrical array of four linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the PV stack including the CdTe absorber layer, CdS buffer layer and the back TCO contact. Details of the system design will be provided together with optical, electrical and metrology data already obtained from ITO thin films. The "closed field" sputtering

  1. Separation of Hydrogen Using an Electroless Deposited Thin-Film Palladium-Ceramic Composite Membrane

    SciTech Connect

    Ilias, S.; King, F.G.; Fan, Ting-Fang; Roy, S.

    1996-12-31

    The primary objective of this project was to prepare and characterize a hydrogen permselective palladium-ceramic composite membrane for high temperature gas separations and catalytic membrane reactors. Electroless plating method was used to deposit a thin palladium film on microporous ceramic substrate. The objective of this paper is to discuss the preparation and characterization of a thin-film palladium-ceramic composite membrane for selective separation of hydrogen at elevated temperatures and pressures. In this paper, we also present a model to describe the hydrogen transport through the palladium-ceramic composite membrane in a cocurrent flow configuration.

  2. Studies of aluminum oxide thin films deposited by laser ablation technique

    NASA Astrophysics Data System (ADS)

    Płóciennik, P.; Guichaoua, D.; Korcala, A.; Zawadzka, A.

    2016-06-01

    This paper presents the structural and optical investigations of the aluminum oxide nanocrystalline thin films. Investigated films were fabricated by laser ablation technique in high vacuum onto quartz substrates. The films were deposited at two different temperatures of the substrates equal to room temperature and 900 K. X-ray Diffraction spectra proved nanocrystalline character and the corundum phase of the film regardless on the substrate temperature during the deposition process. Values of the refractive indices, extinction and absorption coefficients were calculated by using Transmission and Reflection Spectroscopy in the UV-VIS-NIR range of the wavelength. Coupling Prism Method was used for films thickness estimations. Experimental measurements and theoretical calculations of the Third Harmonic Generation were also reported. Obtained results show that the lattice strain may affect obtained values of the third order nonlinear optical susceptibility.

  3. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOEpatents

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  4. Combustion chemical vapor deposition: A novel thin-film deposition technique

    SciTech Connect

    Hunt, A.T.; Carter, W.B.; Cochran, J.K. Jr. )

    1993-07-12

    A new open-atmosphere chemical vapor deposition (CVD) technique has been developed that we term combustion chemical vapor deposition (CCVD). During CCVD a flame provides the necessary environment for the deposition of a dense film whose elemental constituents are derived from solution, vapor, or gas sources. Ag, YSZ, BaTiO[sub 3], YIG, YBa[sub 2]Cu[sub 3]O[sub [ital x

  5. Calcium phosphate thin film processing by pulsed laser deposition and in situ assisted ultraviolet pulsed laser deposition.

    PubMed

    Nelea, V; Pelletier, H; Iliescu, M; Werckmann, J; Craciun, V; Mihailescu, I N; Ristoscu, C; Ghica, C

    2002-12-01

    Calcium orthophosphates (CaP) and hydroxyapatite (HA) were intensively studied in order to design and develop a new generation of bioactive and osteoconductive bone prostheses. The main drawback now in the CaP and HA thin films processing persists in their poor mechanical characteristics, namely hardness, tensile and cohesive strength, and adherence to the metallic substrate. We report here a critical comparison between the microstructure and mechanical properties of HA and CaP thin films grown by two methods. The films were grown by KrF* pulsed laser deposition (PLD) or KrF* pulsed laser deposition assisted by in situ ultraviolet radiation emitted by a low pressure Hg lamp (UV-assisted PLD). The PLD films were deposited at room temperature, in vacuum on Ti-5Al-2.5Fe alloy substrate previously coated with a TiN buffer layer. After deposition the films were annealed in ambient air at 500-600 degrees C. The UV-assisted PLD films were grown in (10(-2)-10(-1) Pa) oxygen directly on Ti-5Al-2.5Fe substrates heated at 500-600 degrees C. The films grown by classical PLD are crystalline and stoichiometric. The films grown by UV-assisted PLD were crystalline and exhibit the best mechanical characteristics with values of hardness and Young modulus of 6-7 and 150-170 GPa, respectively, which are unusually high for the calcium phosphate ceramics. To the difference of PLD films, in the case of UV-assisted PLD, the GIXRD spectra show the decomposition of HA in Ca(2)P(2)O(7), Ca(2)P(2)O(9) and CaO. The UV lamp radiation enhanced the gas reactivity and atoms mobility during processing, increasing the tensile strength of the film, while the HA structure was destroyed.

  6. Low temperature deposition of silver sulfide thin films by AACVD for gas sensor application

    NASA Astrophysics Data System (ADS)

    Hussain, Syed Tajammul; Bakar, Shahzad Abu; Saima, BiBi; Muhammad, Bakhtiar

    2012-10-01

    Crack free Ag2S thin films were deposited on glass substrates by aerosol assisted chemical vapor deposition (AACVD) using [Ag(S2CN (C2H5)2)3]2 (1) as a precursor. Thin films were deposited from solution of methanol at 400 °C and characterized by X-ray diffraction (XRD), UV-vis spectroscopy, scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis. SEM image of thin film showed well-defined and porous surface morphology with an average particle size of 0.3-0.5 μm. Optical band gaps energy of 1.33 eV was estimated for Ag2S thin film, by extrapolating the linear part of the Tauc plot recorded at room temperature. The gas sensing characteristics of the novel gas sensors based on Ag2S were investigated for the detection carbon monoxide. The effect of operating temperature and change in gas concentration on the performance of carbon monoxide were investigated. The sensing mechanism of sensor was discussed.

  7. Deposition and characterization of amorphous electroless Ni-Co-P alloy thin film for ULSI application

    NASA Astrophysics Data System (ADS)

    Kumar, Anuj; Suhag, Ashok Kumar; Singh, Amanpal; Sharma, Satinder K.; Kumar, Mukesh; Kumar, Dinesh

    2014-09-01

    Electroless based Ni-Co-P alloy thin films were deposited using sodium hypophosphite as a reducing agent and sodium citrate as a complexing agent in an alkaline plating bath. The effect of solution pH and temperature on the plating rate was examined. The decrease in activation energy (81.35 - 73.54 kJ mole-1) for the Ni-Co-P thin films deposited on corning glass was observed with the increase in pH (8.5-9.38) of the plating bath. There is a significant decrease in sheet resistance of alloy thin films as the post deposition annealing temperature approaches 400 °C. The presence of nickel as well as nickel phosphide peaks and transition from metastable Ni12P5, Ni8P5 and Ni5P2 phases into thermodynamically stable NiP, NiP2, Ni3P phases after annealing at 600 °C was observed in XRD spectra, indicating the crystallization of the thin films. Surface topography analysis shows the variation of grain size in the range 20-40 nm.

  8. Metal-Organic Framework Thin Films as Platforms for Atomic Layer Deposition of Cobalt Ions To Enable Electrocatalytic Water Oxidation.

    PubMed

    Kung, Chung-Wei; Mondloch, Joseph E; Wang, Timothy C; Bury, Wojciech; Hoffeditz, William; Klahr, Benjamin M; Klet, Rachel C; Pellin, Michael J; Farha, Omar K; Hupp, Joseph T

    2015-12-30

    Thin films of the metal-organic framework (MOF) NU-1000 were grown on conducting glass substrates. The films uniformly cover the conducting glass substrates and are composed of free-standing sub-micrometer rods. Subsequently, atomic layer deposition (ALD) was utilized to deposit Co(2+) ions throughout the entire MOF film via self-limiting surface-mediated reaction chemistry. The Co ions bind at aqua and hydroxo sites lining the channels of NU-1000, resulting in three-dimensional arrays of separated Co ions in the MOF thin film. The Co-modified MOF thin films demonstrate promising electrocatalytic activity for water oxidation.

  9. Metal-Organic Framework Thin Films as Platforms for Atomic Layer Deposition of Cobalt Ions To Enable Electrocatalytic Water Oxidation.

    PubMed

    Kung, Chung-Wei; Mondloch, Joseph E; Wang, Timothy C; Bury, Wojciech; Hoffeditz, William; Klahr, Benjamin M; Klet, Rachel C; Pellin, Michael J; Farha, Omar K; Hupp, Joseph T

    2015-12-30

    Thin films of the metal-organic framework (MOF) NU-1000 were grown on conducting glass substrates. The films uniformly cover the conducting glass substrates and are composed of free-standing sub-micrometer rods. Subsequently, atomic layer deposition (ALD) was utilized to deposit Co(2+) ions throughout the entire MOF film via self-limiting surface-mediated reaction chemistry. The Co ions bind at aqua and hydroxo sites lining the channels of NU-1000, resulting in three-dimensional arrays of separated Co ions in the MOF thin film. The Co-modified MOF thin films demonstrate promising electrocatalytic activity for water oxidation. PMID:26636174

  10. Method of forming ultra thin film devices by vacuum arc vapor deposition

    NASA Technical Reports Server (NTRS)

    Schramm, Harry F. (Inventor)

    2005-01-01

    A method for providing an ultra thin electrical circuit integral with a portion of a surface of an object, including using a focal Vacuum Arc Vapor Deposition device having a chamber, a nozzle and a nozzle seal, depressing the nozzle seal against the portion of the object surface to create an airtight compartment in the chamber and depositing one or more ultra thin film layer(s) only on the portion of the surface of the object, the layers being of distinct patterns such that they form the circuit.

  11. Effect of sputter deposited YSZ thin films on the fracture behavior of dental bioceramics

    NASA Astrophysics Data System (ADS)

    Teixeira, Erica Cappelletto Nogueira

    The fracture behavior of dental bioceramic materials was evaluated under physiologic conditions when modified by yttria stabilized zirconia (YSZ) thin film deposition. It was hypothesized that changing the YSZ thin film properties will produce a significant enhancement in the strength of bioceramic materials, ultimately promoting a more fatigue resistant construct. Porcelain, alumina, and zirconia were evaluated in terms of dynamic fatigue for an initial characterization of their fracture behavior. Data showed that strength degradation occurred in all three materials, most drastically in porcelain. Initial strength measurements, focused on depositing YSZ thin films on three unique substrates; porcelain, alumina, and zirconia, were carried out. A significant increase in strength was observed for alumina and porcelain. Since strength alone is not enough to characterize the fracture behavior of brittle materials, coated specimens of porcelain and zirconia were subjected to dynamic fatigue and Weibull analysis. Coated YSZ porcelain specimens showed a significant increase in strength at all tested stressing rates. YSZ coated zirconia specimens showed similar strength values at all stressing rates. The effect of film thickness on porcelain was also evaluated. Data demonstrated that film thickness alone does not appear to control increases in the flexural strength of a modified substrate. It is expected that deposition induced stress in YSZ sputtered films does not change with film thickness. However, a thicker film will generate a larger force at the film/substrate interface, contributing to delamination of the film. It was clear that in order to have a significant improvement in the fracture behavior of porcelain, changing the thickness of the film is not enough. The columnar structure of the YSZ films developed seems to favor an easy path for crack propagation limiting the benefits expected by the coating. The effect of a multilayered film, composed by brittle

  12. CuInS 2 thin films obtained through the annealing of chemically deposited In 2S 3-CuS thin films

    NASA Astrophysics Data System (ADS)

    Peña, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vázquez, A.; Gómez, I.; Elizondo, P.

    2011-01-01

    In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2S 3) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  13. Evaporation system and method for gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J.; Halpern, B.L.

    1994-10-18

    A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

  14. Negative ions: The overlooked species in thin film growth by pulsed laser deposition

    SciTech Connect

    Esposito, M.; Bator, M.; Lippert, T.; Schneider, C. W.; Wokaun, A.; Doebeli, M.

    2011-11-07

    Plasma plume species from a ceramic La{sub 0.4}Ca{sub 0.6}MnO{sub 3} target were studied by plasma mass spectrometry as a function of laser fluence, background gas, and deposition pressure to understand the interplay between plasma composition and oxide thin film growth by pulsed laser deposition. The plume composition reveals a significant contribution of up to 24% of negative ions, most notably using a N{sub 2}O background. The significance of negative ions for thin film growth is shown for La{sub 0.4}Ca{sub 0.6}MnO{sub 3} films grown in different background conditions where the best structural properties coincide with the largest amount of negative plasma species.

  15. Thermal Vapor Deposition and Characterization of Polymer-Ceramic Nanoparticle Thin Films and Capacitors

    NASA Astrophysics Data System (ADS)

    Iwagoshi, Joel A.

    Research on alternative energies has become an area of increased interest due to economic and environmental concerns. Green energy sources, such as ocean, wind, and solar power, are subject to predictable and unpredictable generation intermittencies which cause instability in the electrical grid. This problem could be solved through the use of short term energy storage devices. Capacitors made from composite polymer:nanoparticle thin films have been shown to be an economically viable option. Through thermal vapor deposition, we fabricated dielectric thin films composed of the polymer polyvinylidine fluoride (PVDF) and the ceramic nanoparticle titanium dioxide (TiO2). Fully understanding the deposition process required an investigation of electrode and dielectric film deposition. Film composition can be controlled by the mass ratio of PVDF:TiO2 prior to deposition. An analysis of the relationship between the ratio of PVDF:TiO2 before and after deposition will improve our understanding of this novel deposition method. X-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy were used to analyze film atomic concentrations. The results indicate a broad distribution of deposited TiO2 concentrations with the highest deposited amount at an initial mass concentration of 17% TiO2. The nanoparticle dispersion throughout the film is analyzed through atomic force microscopy and energy dispersive x-ray spectroscopy. Images from these two techniques confirm uniform TiO2 dispersion with cluster size less than 300 nm. These results, combined with spectroscopic analysis, verify control over the deposition process. Capacitors were fabricated using gold parallel plates with PVDF:TiO 2 dielectrics. These capacitors were analyzed using the atomic force microscope and a capacohmeter. Atomic force microscope images confirm that our gold films are acceptably smooth. Preliminary capacohmeter measurements indicate capacitance values of 6 nF and break down voltages of 2.4 V

  16. Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

    SciTech Connect

    Shan, F.K.; Liu, G.X.; Lee, W.J.; Lee, G.H.; Kim, I.S.; Shin, B.C.

    2005-07-15

    Gallium oxide (Ga{sub 2}O{sub 3}) thin films were deposited on silicon (100) and sapphire (001) substrates using the plasma-enhanced atomic layer deposition (PEALD) technique with an alternating supply of reactant source, [(CH{sub 3}){sub 2}GaNH{sub 2}]{sub 3}, and oxygen plasma. The thin films were annealed at different temperatures (500, 700, and 900 deg. C, respectively) in a rapid thermal annealing system for 1 min. It was found that Ga{sub 2}O{sub 3} thin films deposited by PEALD showed excellent step coverage characteristics. X-ray diffraction measurements showed that the as-deposited thin film was amorphous. However, the thin films annealed at temperatures higher than 700 deg. C showed a (400) orientation of the monoclinic structure. An atomic force microscope was used to investigate the surface morphologies of the thin films. The thin films showed very smooth surfaces; the roughness of the as-deposited thin film was about 4 A . With increasing annealing temperature, the thin film became rougher compared with that annealed at lower temperatures. A double-beam spectrophotometer was used to measure the transmittances of the thin films on the sapphire substrates. The thin films showed a very high transmittance (nearly 100%). The band-gap energies of the thin films were determined by a linear fit of the transmittance spectra and were calculated to be between 5.0 and 5.24 eV. The electrical properties of thin films of Pt/film/Si structure were also investigated. It was found that, with increasing annealing temperature, the insulating characteristics of the Ga{sub 2}O{sub 3} thin films were significantly improved. Spectroscopic ellipsometry was used to derive the refractive indices and the thicknesses of the thin films. The refractive indices of the thin films showed normal dispersion behavior. The refractive indices of the thin films annealed at low temperatures were smaller than those annealed at high temperatures.

  17. Photocatalytic anatase titanium dioxide thin films deposition by an atmospheric pressure blown arc discharge

    NASA Astrophysics Data System (ADS)

    Boscher, Nicolas D.; Olivier, Sébastien; Maurau, Rémy; Bulou, Simon; Sindzingre, Thierry; Belmonte, Thierry; Choquet, Patrick

    2014-08-01

    TiO2 thin films are deposited by means of an atmospheric pressure blown arc discharge fed with nitrogen and titanium bis(acetylacetonate) diisopropoxide (TIPO) as precursor. Different power densities and distances between the plasma nozzle, the precursor injector and the substrate are investigated and different morphologies, compositions and crystallinities of the coatings are generated. The photocatalytic properties of the coatings, determined from the degradation of stearic acid shined by a 254 nm UV light, are shown to be strongly related to the film characteristic and therefore to the deposition parameters.

  18. Structural and electrical properties of a metallic rough-thin-film system deposited on liquid substrates

    NASA Astrophysics Data System (ADS)

    Ye, Gao-Xiang; Zhang, Qi-Rui; Feng, Chun-Mu; Ge, Hong-Liang; Jiao, Zheng-Kuan

    1996-11-01

    A rough-thin-film system, deposited on silicone oil drop surfaces by a rf-magnetron sputtering method, has been fabricated and its structure as well as I-V characteristics have been studied. A characteristic surface morphology at the micrometer scale is observed. The anomalous deposition rate, which strongly depends on the nominal film thickness, can be interpreted under the assumption of the second evaporating and the penetrating effects. We find Ic~R-α0, with α=0.52+/-0.06, where R0 and Ic are the zero power resistance and the breakdown current, respectively. The importance of the liquid substrates is discussed.

  19. Hydrogen gas sensors based on electrostatically spray deposited nickel oxide thin film structures

    NASA Astrophysics Data System (ADS)

    Jamal, Raied K.; Aadim, Kadhim A.; Al-Zaidi, Qahtan G.; Taaban, Iman N.

    2015-09-01

    A simple, low-cost, and home-built electrostatic spray deposition (ESD) system with the stable cone-jet mode was used to deposit nickel oxide (NiO) thin films on glass substrates kept at temperature of 400 °C as the primary precursor solution of 0.1 M concentration hydrated nickel chloride was dissolved in isopropyl alcohol. Electrical measurements showed that these films were of n-type conductivity while their resistance response to hydrogen flow in air ambient was varied by 2.81% with the rise and recovery time of 48 s and 40 s, respectively.

  20. Nano-indentation of single-layer optical oxide thin films grown by electron-beam deposition

    SciTech Connect

    Mehrotra, K.; Oliver, J. B.; Lambropoulos, J. C.

    2015-01-01

    Mechanical characterization of optical oxide thin films is performed using nano-indentation, and the results are explained based on the deposition conditions used. These oxide films are generally deposited to have a porous microstructure that optimizes laser induced damage thresholds, but changes in deposition conditions lead to varying degrees of porosity, density, and possibly the microstructure of the thin film. This can directly explain the differences in the mechanical properties of the film studied here and those reported in literature. Of the four single-layer thin films tested, alumina was observed to demonstrate the highest values of nano-indentation hardness and elastic modulus. This is likely a result of the dense microstructure of the thin film arising from the particular deposition conditions used.

  1. Study of the morphology of ZnS thin films deposited on different substrates via chemical bath deposition.

    PubMed

    Gómez-Gutiérrez, Claudia M; Luque, P A; Castro-Beltran, A; Vilchis-Nestor, A R; Lugo-Medina, Eder; Carrillo-Castillo, A; Quevedo-Lopez, M A; Olivas, A

    2015-01-01

    In this work, the influence of substrate on the morphology of ZnS thin films by chemical bath deposition is studied. The materials used were zinc acetate, tri-sodium citrate, thiourea, and ammonium hydroxide/ammonium chloride solution. The growth of ZnS thin films on different substrates showed a large variation on the surface, presenting a poor growth on SiO2 and HfO2 substrates. The thin films on ITO substrate presented a uniform and compact growth without pinholes. The optical properties showed a transmittance of about 85% in the visible range of 300-800 nm with band gap of 3.7 eV.

  2. Study of the morphology of ZnS thin films deposited on different substrates via chemical bath deposition.

    PubMed

    Gómez-Gutiérrez, Claudia M; Luque, P A; Castro-Beltran, A; Vilchis-Nestor, A R; Lugo-Medina, Eder; Carrillo-Castillo, A; Quevedo-Lopez, M A; Olivas, A

    2015-01-01

    In this work, the influence of substrate on the morphology of ZnS thin films by chemical bath deposition is studied. The materials used were zinc acetate, tri-sodium citrate, thiourea, and ammonium hydroxide/ammonium chloride solution. The growth of ZnS thin films on different substrates showed a large variation on the surface, presenting a poor growth on SiO2 and HfO2 substrates. The thin films on ITO substrate presented a uniform and compact growth without pinholes. The optical properties showed a transmittance of about 85% in the visible range of 300-800 nm with band gap of 3.7 eV. PMID:26011683

  3. Ion implantation induced phase transformation and enhanced crystallinity of as deposited copper oxide thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Bind, Umesh Chandra; Dutta, Raj Kumar; Sekhon, Gurpreet Kaur; Yadav, Kanhaiya Lal; Krishna, J. B. M.; Menon, Ranjini; Nabhiraj, P. Y.

    2015-08-01

    Copper oxide thin film of about 260-280 nm thickness was deposited using pulsed laser deposition (PLD) on glass substrate at 350 °C and post depositional sample treatment was performed by ion implantation with 50 keV N5+ ion beam with varying particle fluence. Amorphous copper oxide thin film deposited at 80 mTorr partial pressure of oxygen was transformed to cubic Cu2O phase (20.2 nm) when implanted at 1 × 1016 particles/cm2. While mixed Cu2O and CuO phases in the thin film deposited at 100 mTorr oxygen pressure was transformed to single phase of Cu2O (23.5 nm), with enhanced crystallinity when implanted with 2.5 × 1015 particles/cm2. The phase transformation and improved crystallinity is attributed to thermal effect owing to stopping of incident ion beam. Implantation with higher particle fluence led to transformation to CuO phase with reduced crystallite sized and the increased electrical conductivity.

  4. In-Situ phase and texture characterization of solution deposited PZT thin films during crystallization.

    SciTech Connect

    Brennecka, Geoffrey L.; Nittala, Krishna; Jones, Jacob L.

    2010-08-01

    Ferroelectric lead zirconate titanate (PZT) thin films are used for integrated capacitors, ferroelectric memory, and piezoelectric actuators. Solution deposition is routinely used to fabricate these thin films. During the solution deposition process, the precursor solutions are spin coated onto the substrate and then pyrolyzed to form an amorphous film. The amorphous film is then heated at a higher temperature (650-700 C) to crystallize the film into the desired perovskite phase. Phase purity is critical in achieving high ferroelectric properties. Moreover, due to the anisotropy in the structure and properties of PZT, it is desirable to control the texture obtained in these thin films. The heating rate during crystallization process is known to affect the sequence of phase evolution and texture obtained in these thin films. However, to date, a comprehensive understanding of how phase and texture evolution takes place is still lacking. To understand the effects of heating rate on phase and texture evolution, in-situ diffraction experiments during the crystallization of solution deposited PZT thin films were carried out at beamline 6-ID-B, Advanced Photon Source (APS). The high X-ray flux coupled with the sophisticated detectors available at the APS synchrotron source allow for in-situ characterization of phase and texture evolution at the high ramp rates that are commonly used during processing of PZT thin films. A PZT solution of nominal composition 52/48 (Zr/Ti) was spin coated onto a platinum-coated Si substrate (Pt//TiO{sub x}//SiO{sub 2}//Si). The films were crystallized using an infrared lamp, similar to a rapid thermal annealing furnace. The ramp rate was adjusted by controlling the voltage applied to the infrared lamp and increasing the voltage by a constant step with every acquisition. Four different ramp rates, ranging from {approx}1000 C/s to {approx}1 C/s, were investigated. The sample was aligned in grazing incidence to maximize the signal from the thin

  5. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

    PubMed Central

    Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-01-01

    We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~108, a field-effect mobility of ~22 cm2 V−1 s−1, and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors. PMID:27383148

  6. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

    PubMed

    Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-07-07

    We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

  7. Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

    NASA Astrophysics Data System (ADS)

    Zhang, Shao-qian; Němec, Petre; Nazabal, Virginie; Jin, Yu-qi

    2016-05-01

    Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

  8. Electrochromic properties of spray deposited TiO 2-doped WO 3 thin films

    NASA Astrophysics Data System (ADS)

    Patil, P. S.; Mujawar, S. H.; Inamdar, A. I.; Sadale, S. B.

    2005-08-01

    TiO 2-doped WO 3 thin films were deposited onto fluorine-doped tin oxide coated conducting glass substrates using spray pyrolysis technique at 525 °C. The volume percentage of TiO 2 dopant was varied from 13% to 38%. The thin film samples were transparent, uniform and strongly adherent to the substrates. Electrochromical properties of TiO 2-doped WO 3 thin films were studied with the help of cyclic voltammetry (CV), chronoamperometry (CA) and chronocoulometry (CC) techniques. It has been found that TiO 2 doping in WO 3 enhances its electrochromic performance. Colouration efficiency becomes almost double and samples exhibit increasingly high reversibility with TiO 2 doping concentrations, in the studied range.

  9. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

    NASA Astrophysics Data System (ADS)

    Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-07-01

    We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~108, a field-effect mobility of ~22 cm2 V-1 s-1, and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

  10. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    NASA Astrophysics Data System (ADS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-09-01

    Ultra-thin hafnium dioxide (HfO2) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO2 films deposited on silicon wafers (HfO2/SiO2/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO2 phases for the atomic layer deposited HfO2. The HfSixOy complex formed at the interface between HfO2 and SiO2/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO2 films on SiO2/Si substrates.

  11. Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

    SciTech Connect

    Long, Rong; Dunn, Martin L.

    2014-06-21

    Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

  12. Buffer layers for deposition of superconducting YBaCuO thin film on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Cui, G. J.; Lincoln, B. A.; Kirlin, Peter S.

    1992-09-01

    In an attempt to combine the properties of high temperature superconductors with the high thermal conductivity and low specific heat of diamond, we have explored the deposition of in- situ YBa(subscript 2)Cu(subscript 3)O(subscript 7-(delta) ) (YBCO) superconducting films on polycrystalline diamond thin films. We demonstrate for the first time superconducting YBCO films on diamond employing multiple layer buffer layer systems. Three different composite buffer layer systems were explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si(subscript 3)N(subscript 4)/YSZ/YBCO, and (3) Diamond/SiO(subscript 2)/YSZ/YBCO. Adherent thin Zr films were deposited by dc sputtering on the diamond films at 450 to 820 degree(s)C. The yttria stabilized zirconia (YSZ) was deposited by reactive RF sputtering at 680 to 750 degree(s)C. The Si(subscript 3)N(subscript 4) and SiO(subscript 2) were also deposited by on-axis RF sputtering at 400 to 700 degree(s)C. YBCO films were grown on the buffer layers by off-axis RF sputtering at substrate temperatures between 690 degree(s)C and 750 degree(s)C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric far IR detectors and paves the way for the use of HTSC as a high frequency interconnect metallization on thick diamond film based multichip modules.

  13. Formation of rubrene nanocrystals by laser ablation in liquids utilizing MAPLE deposited thin films

    NASA Astrophysics Data System (ADS)

    O'Malley, Sean M.; Amin, Mitesh; Borchert, James; Jimenez, Richard; Steiner, Matt; Fitz-Gerald, James M.; Bubb, Daniel M.

    2014-03-01

    Nanoparticles (NPs) of the organic semiconductor rubrene were formed utilizing the laser ablation in liquids (LAL) method. Thin-films deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE) served as the ablation targets. We note in the case of amorphous films targets, the absorbed energy is below the threshold value needed for ablation; though polycrystalline films irradiated under the same LAL conditions result in ejecta. It is suggested this stems from an increase in the effective absorption through light trapping within crystalline domains. An observed red-shift in the absorption edge is attributed to the polar aqueous environment and to the crystalline phase.

  14. Electrochromism in sputter deposited W1-y MoyO3 thin films

    NASA Astrophysics Data System (ADS)

    Arvizu, M. A.; Granqvist, C. G.; Niklasson, G. A.

    2016-02-01

    Electrochromic (EC) properties of tungsten-molybdenum oxide (W1-y MoyO3) thin films were investigated. The films were deposited on indium tin oxide covered glass by reactive DC sputtering from tungsten and molybdenum targets. Elemental compositions of the W1-y MoyO3 films were determined by Rutherford back scattering. Voltammetric cycling was performed in an electrolyte of 1 M LiClO4 in propylene carbonate. An increase in molybdenum content in the EC films caused both a shift towards higher energies and a lowering of the maximum of the optical absorption band, as compared with WO3 EC films. Durability under electrochemical cycling was diminished for W1-y MoyO3 EC films.

  15. Defect analysis and mechanical performance of plasma-deposited thin films on flexible polycarbonate substrates

    NASA Astrophysics Data System (ADS)

    Patel, Rakhi P.; Wolden, Colin A.

    2013-03-01

    A simple solvent-etch based technique is developed to visualize and quantify defects in transparent thin films deposited on flexible polymer substrates. This approach is used to characterize defects in as-deposited films and to monitor their evolution as a function of applied and repetitive bending. Thin films investigated include sputtered indium tin oxide (ITO) and alumina-silicone nanolaminates fabricated by plasma-enhanced chemical vapor deposition. It is shown that the use of nanolaminate architectures reduces the defect density by two orders of magnitude relative to a single alumina layer. The pinhole density increases when nanolaminates are subjected to applied stress, and at a critical density of ˜10/mm2 the isolated defects coalesce into macroscopic cracks. In the case of ITO an optimum film thickness is identified that balances electronic performance with mechanical integrity. Conductivity correlates with defect density, and the films displayed very similar performance under tensile and compressive strain. A critical radius of curvature of 0.75 in. was identified, but films cycled below the threshold strain demonstrated robust performance, with only negligible changes in resistivity through 2000 bending cycles. The strong performance under strain is attributed to the amorphous nature of the sputtered ITO.

  16. Pulsed laser deposition of YBCO thin films on IBAD-YSZ substrates

    NASA Astrophysics Data System (ADS)

    Li, M.; Ma, B.; Koritala, R. E.; Fisher, B. L.; Venkataraman, K.; Balachandran, U.

    2003-01-01

    High-quality YBa2Cu3O7-x (YBCO) films were fabricated on yttria-stabilized zirconia (YSZ)-buffered Hastelloy C276 substrates by pulsed laser deposition. YSZ was grown by ion-beam-assisted deposition. A thin (approx10 nm) CeO2 layer was deposited before the deposition of YBCO. The crystalline structure and biaxial texture of the YBCO film and the buffer layer were examined by x-ray diffraction 2theta-scan, phi-scan and pole-figure analysis. Epitaxial growth of the YBCO film on the buffer layer was observed. Full width at half maximum (FWHM) value of 7.4° was measured from the phi-scan of YBCO(103). Raman spectroscopy showed compositional uniformity and phase integrity in the YBCO films. Surface morphologies of the YBCO films were examined by scanning electron microscopy. Comparative studies indicated that the CeO2 buffer layer significantly improves the structural alignment and superconducting properties of YBCO films. Tc = 90 K, with sharp transition, and transport Jc = 2.2 × 106 A cm-2 at 77 K in zero-external field were obtained on the 0.5 mum thick YBCO films. The dependence of Jc on the FWHM of the YBCO(103) phi-scan indicated that high Jc is associated with low FWHM.

  17. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  18. Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

    2006-01-01

    Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

  19. Atomic layer deposition of amorphous niobium carbide-based thin film superconductors.

    SciTech Connect

    Klug, J. A.; Prolier, T.; Elam, J. W.; Becker, N. G.; Pellin, M. J.

    2011-01-01

    Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF{sub 5}, and NbCl{sub 5} precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 {angstrom}/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125-350 C. Varying amounts of impurities, including amorphous carbon (a-C), AlF{sub 3}, NbF{sub x}, and NbCl{sub x}, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF{sub 5} or NbCl{sub 5}. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superconducting transition at T{sub c} = 1.8 K in a 75 nm thick film grown at 350 C with TMA and NbF{sub 5}. The superconducting critical temperature could be increased up to 3.8 K with additional use of NH{sub 3} during ALD film growth.

  20. atomic layer deposition of amorphous niobium carbide-based thin film superconductors.

    SciTech Connect

    Prolier, T.; Klug, J. A.; Elam, J. W.; Claus, H.; Becker, N. G.; Pellin, M. J.

    2011-01-01

    Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF{sub 5}, and NbCl{sub 5} precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 {angstrom}/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125-350 C. Varying amounts of impurities, including amorphous carbon (a-C), AlF{sub 3}, NbF{sub x}, and NbCl{sub x}, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF{sub 5} or NbCl{sub 5}. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superconducting transition at T{sub c} = 1.8 K in a 75 nm thick film grown at 350 C with TMA and NbF{sub 5}. The superconducting critical temperature could be increased up to 3.8 K with additional use of NH{sub 3} during ALD film growth.

  1. Deposition of SiNx Thin Film Using µ-SLAN Surface Wave Plasma Source

    NASA Astrophysics Data System (ADS)

    Xu, Ying-Yu; Ogishima, Takuya; Korzec, Dariusz; Nakanishi, Yoichiro; Hatanaka, Yoshinori

    1999-07-01

    A slot antenna (µ-SLAN) microwave surface wave plasma source was developed for SiNx thin film preparation. A µ-SLAN-produced argon plasma density up to 1011 cm-3 has been achieved at an axial position of about 43 cm from the ring cavity at a microwave power of 500 W and a chamber pressure of 0.5 Torr. High-speed deposition of SiNx thin film was performed using the µ-SLAN-assisted remote plasma enhanced chemical vapor deposition method incorporating tris(dimethylamino)silane (TDMAS) as a monomer source. The film deposition rate increased rapidly up to 270 nm/min when some hydrogen was mixed in the nitrogen gas and increased from 0 to 1%. A further increase of hydrogen content, however, only slightly increased the film deposition rate. A high deposition rate of 280 nm/min was obtained when 15% hydrogen was mixed in the nitrogen gas, with the chamber pressure and microwave power at 1.5 Torr and 500 W, respectively.

  2. Ion beam sputter deposition of TiNi shape memory alloy thin films

    NASA Astrophysics Data System (ADS)

    Davies, Sam T.; Tsuchiya, Kazuyoshi

    1999-08-01

    The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of < 150 degrees C with as-deposited films exhibiting shape memory properties without post-process high temperature annealing. Thermal imagin is used to monitor changes which are characteristic of the shape memory effect and is indicative of changes in specific heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

  3. Combustion chemical vapor deposition - A novel thin-film deposition technique

    NASA Astrophysics Data System (ADS)

    Hunt, A. T.; Carter, W. B.; Cochran, J. K., Jr.

    1993-07-01

    A new open-atmosphere chemical vapor deposition (CVD) technique has been developed that we term combustion chemical vapor deposition (CCVD). During CCVD a flame provides the necessary environment for the deposition of a dense film whose elemental constituents are derived from solution, vapor, or gas sources. Ag, YSZ, BaTiO3, YIG, YBa2Cu3O(x), and Y2BaCuO5 have been deposited via CCVD with the combustion of a sprayed, cation-containing, organic solution as the sole heat source. CCVD could, for some applications, be less expensive and more flexible than conventional CVD.

  4. Highly crystalline MoS{sub 2} thin films grown by pulsed laser deposition

    SciTech Connect

    Serrao, Claudy R.; You, Long; Gadgil, Sushant; Hu, Chenming; Salahuddin, Sayeef; Diamond, Anthony M.; Hsu, Shang-Lin; Clarkson, James; Carraro, Carlo; Maboudian, Roya

    2015-02-02

    Highly crystalline thin films of MoS{sub 2} were prepared over large area by pulsed laser deposition down to a single monolayer on Al{sub 2}O{sub 3} (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.

  5. Antibiofouling Properties of Plasma-Deposited Oxazoline-Based Thin Films.

    PubMed

    Cavallaro, Alex A; Macgregor-Ramiasa, Melanie N; Vasilev, Krasimir

    2016-03-01

    Infections caused by the bacterial colonization of medical devices are a substantial problem to patients and healthcare. Biopassive polyoxazoline coatings are attracting attention in the biomedical field as one of the potential solutions to this problem. Here, we present an original and swift way to produce plasma-deposited oxazoline-based films for antifouling applications. The films developed via the plasma deposition of 2-methyl-2-oxazoline and 2-ethyl-2-oxazoline have tunable thickness and surface properties. Diverse film chemistries were achieved by tuning and optimizing the deposition conditions. Human-derived fibroblasts were used to confirm the biocompatibility of oxazoline derived coatings. The capacity of the coatings to resist biofilm attachment was studied as a function of deposition power and mode (i.e., continuous wave or pulsed) and precursor flow rates for both 2-methyl-2-oxazoline and 2-ethyl-2-oxazoline. After careful tuning of the deposition parameters films having the capacity to resist biofilm formation by more than 90% were achieved. The substrate-independent and customizable properties of the new generation of plasma deposited oxazoline thin films developed in this work make them attractive candidates for the coating of medical devices and other applications where bacteria surface colonization and biofilm formation is an issue. PMID:26901823

  6. Some aspects over the quality of thin films deposited on special steels used in hydraulic blades

    NASA Astrophysics Data System (ADS)

    Tugui, C. A.; Vizureanu, P.; Iftimie, N.; Steigmann, R.

    2016-08-01

    The experimental research involved in this paper consists in the obtaining of superior physical, chemical and mechanical properties of stainless steels used in the construction of hydraulic turbine blades. These properties are obtained by deposition of hard thin films in order to improve the wear resistance, increasing the hardness but maintaining the tenacious core of the material. The chosen methods for deposition are electrospark deposition because it has relatively low costs, are easy to obtain, the layers have a good adherence to support and the thickness can be variable in function of the established conditions and the pulsed laser deposition because high quality films can be obtained at nanometric precision. The samples will be prepared for the analysis of the structure using optical method as well as for the obtaining of the optimal roughness for the deposition. The physical, chemical and mechanical properties will be determined after deposition using SEM and EDX, in order to emphasize the structure film-substrate and repartition of the deposition elements on the surface and in transversal section. The non-destructive testing has emphasized the good adherence between deposited layer and the metallic support, due to double deposition, spallation regions doesn't appear.

  7. Atomic Layer Deposition of Metal Oxide Thin Films on Metallic Substrates

    NASA Astrophysics Data System (ADS)

    Foroughi Abari, Ali

    Atomic layer deposition (ALD) is a powerful ultra-thin film deposition technique that uses sequential self-limiting surface reactions to provide conformal atomic scale film growth. Deposition of ALD films on many substrate systems has been studied before; however, limited data is available on deposition on metallic surfaces. The investigation of the growth of Al 2O3, HfO2, and ZrO2 as three technologically important metal oxides on metallic substrates is the subject of this thesis. Al2O3, HfO2, and ZrO2 films were grown by ALD on silicon, as a well-studied substrate, in different operating conditions to investigate the effect of process parameters on film properties. To study the growth of oxides on metals, thin metallic substrates were prepared by sputter deposition on silicon wafers and then were transferred to the ALD chamber where the film growth was monitored by in-situ spectroscopic ellipsometry. The transfer was performed via a load lock system without breaking the vacuum to preserve the pristine metal surface. Formation of a thin interfacial layer of metal oxide was observed during the initial moments of plasma enhanced ALD, that was due to the exposure of metal surface to oxygen plasma. In-situ spectroscopic ellipsometry was used to accurately measure the thickness change of the growing films including the interfacial layer. The thickness of this interfacial oxide layer depended on various process parameters including deposition temperature, order of precursors and plasma pulse length. The interfacial oxide layer was absent during the conventional thermal ALD. However, thermal ALD of oxides on metals exhibited substrate-inhibited growth, especially at higher deposition temperatures. With the knowledge of ALD growth characteristics on metals, metal-insulator-metal (MIM) devices were fabricated by both thermal and plasma enhanced ALD and electrically characterized. The presence of the interfacial oxide layer altered the device performance by changing the

  8. Characterization of CuInTe2 thin films deposited by electrochemical technique

    NASA Astrophysics Data System (ADS)

    Patil, Neelima A.; Lakhe, Manorama; Chaure, N. B.

    2012-06-01

    Copper Indium ditelluride (CuInTe2) thin films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates by electrodeposition technique. Cyclic voltammetry analysis was used to optimize suitable deposition parameters. Micro structural properties were examined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX) for as-deposited and annealed films at 400 °C. After annealing the prominent (112), (220/204), (312/116) peaks of CuInTe2 (CIT) were observed indicate tetragonal structure which is most common structure of I-III-VI2 semiconductors, suitable for high efficiency photovoltaic devices. The band gap of the CIT film was determined around 1.01 eV. Elemental composition analysis was performed using energy dispersive X-ray analysis (EDAX).

  9. V2O5 thin film deposition for application in organic solar cells

    NASA Astrophysics Data System (ADS)

    Arbab, Elhadi A. A.; Mola, Genene Tessema

    2016-04-01

    Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

  10. Synthesis and characterization of chemically deposited CdS thin films without toxic precursors.

    NASA Astrophysics Data System (ADS)

    Fernández-Pérez, A.; Sandoval-Paz, M. G.

    2016-05-01

    Al doped and undoped CdS thin films (CdS:Al) were deposited on glass, copper and bronze substrates by chemical bath deposition technique in an ammonia-free cadmium-sodium citrate system. The structural and optical properties of the CdS films were determined by X-ray diffraction (XRD), scanning electron microscope (SEM), and simultaneous transmission- reflection spectroscopy. It was found that the properties of the films depend on the amount of Al in the growth solutions and deposition time. The increase in Al content in the reaction solution led to a smaller crystallite size and higher energy band gap that varies in the range 2.42 eV - 2.59 eV depending on the Al content.

  11. Effect of deposition times on structure of Ga-doped ZnO thin films as humidity sensor

    SciTech Connect

    Khalid, Faridzatul Shahira; Awang, Rozidawati

    2014-09-03

    Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to get samples of different thickness. X-ray diffraction (XRD) was used to determine the structure of GZO thin films. Structure for GZO thin film is hexagonal wurtzite structure. Morphology and thickness of GZO thin films was observed from FESEM micrographs. Grain size and thickness of thin films improved with increasing deposition times. However, increasing the thickness of thin films occur below 25 minutes only. Electrical properties of GZO thin films were studied using a four-point probe technique. The changes in the structure of the thin films lead to the changed of their electrical properties resulting in the reduction of the film resistance. These thin films properties significantly implying the potential application of the sample as a humidity sensor.

  12. Chemical Stability of Titania and Alumina Thin Films Formed by Atomic Layer Deposition.

    PubMed

    Correa, Gabriela C; Bao, Bo; Strandwitz, Nicholas C

    2015-07-15

    Thin films formed by atomic layer deposition (ALD) are being examined for a variety of chemical protection and diffusion barrier applications, yet their stability in various fluid environments is not well characterized. The chemical stability of titania and alumina thin films in air, 18 MΩ water, 1 M KCl, 1 M HNO3, 1 M H2SO4, 1 M HCl, 1 M KOH, and mercury was studied. Films were deposited at 150 °C using trimethylaluminum-H2O and tetrakis(dimethylamido)titanium-H2O chemistries for alumina and titania, respectively. A subset of samples were heated to 450 and 900 °C in inert atmosphere. Films were examined using spectroscopic ellipsometry, atomic force microscopy, optical microscopy, scanning electron microscopy, and X-ray diffraction. Notably, alumina samples were found to be unstable in pure water, acid, and basic environments in the as-synthesized state and after 450 °C thermal treatment. In pure water, a dissolution-precipitation mechanism is hypothesized to cause surface roughening. The stability of alumina films was greatly enhanced after annealing at 900 °C in acidic and basic solutions. Titania films were found to be stable in acid after annealing at or above 450 °C. All films showed a composition-independent increase in measured thickness when immersed in mercury. These results provide stability-processing relationships that are important for controlled etching and protective barrier layers.

  13. Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

    NASA Astrophysics Data System (ADS)

    Williams, J. E.; Camata, R. P.; Fedorov, V. V.; Mirov, S. B.

    2008-05-01

    We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2 2.6 μm spectral range.

  14. Hexagonal nanosized molybdenum diselenide thin film deposited at 333 K by chemical method

    NASA Astrophysics Data System (ADS)

    Sathe, D. J.; Chate, P. A.

    2015-10-01

    Molybdenum diselenide thin films have been deposited on to stainless steel and glass substrates by the chemical process, using ammonium molybdate, sodium selenosulphite as a precursor sources and citric acid was used as a complexing agent. The structural and optical properties of the deposited films have been studied using X-ray diffraction and optical absorption techniques, respectively. XRD studies reveal that the films are polycrystalline with hexagonal crystal structure. Optical absorption study shows the presence of direct transition with band gap energy 1.51 eV. EDAX analysis shows that the films are nearly stoichiometry of Mo: Se: 1:2. The configuration of fabricated cell is n-MoSe2 | NaI (2 M) + I2 (1 M) | C (graphite) yielded a conversion efficiency of 1.08%.

  15. Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

    PubMed Central

    2013-01-01

    Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm. PMID:23391429

  16. Grain growth in thin Al films during deposition from partially ionized vapor

    NASA Astrophysics Data System (ADS)

    Gusev, I. V.; Mokhniuk, A. A.

    2016-07-01

    Grain growth in thin Al films during deposition from partially ionized vapor flux with simultaneous self-ion bombardment was studied in this work. The films were deposited at constant ion energy of 940 eV and total specific power of 0.4 W/cm2 while the deposition time t of 6 s to 246 s and the resulting substrate temperature (Ts/Tm of 0.35-0.96) were varied. Thin continuous Al films exhibited normal grain growth through the entire experimental range of deposition time without limitation of grain growth by the film thickness effect. Three kinetic stages of the grain growth were observed within 100 s of deposition time: the first one exhibits very slow grain growth, accelerated grain growth occurs in the second stage and then it rapidly changes to a retardation and stagnation mode in the third stage. Large average grain sizes Dg up to 11.3 μm at film thickness of 1.4 μm and integral grain growth rates up to 0.16 μm/s were observed in this study. The experimental results were evaluated against various mechanisms of inhibition of grain growth. An estimate of the effective activation energy of the grain growth yields a value of 0.27 eV which is lower than that of the bulk Al and much higher than the activation energy of surface self-diffusion on (1 1 1)Al monocrystal. The power law Dg = (k t)0.5 gives good match with experimental results in the initial deposition phase preceding the grain growth retardation, while another model that is based on the grain size dependent pinning force adequately explains the entire grain size dependence on time. It is deemed both ion enhanced film/surface interaction and impurities on one side and thermal grooves on another side contribute to the rapid retardation of the grain grooves commencing the second growth stage.

  17. Synthesis of novel barium precursors and their use to deposit thin films by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Studebaker, Daniel Bliss

    A new class of volatile compounds of barium were synthesized. These 'capsule' compounds were prepared to saturate the coordination sphere of barium with one ligand. The covalent bonding of the polyglyme ligand to the 2,2,6,6-tetramethyl-3,5-heptanedione or similar ligand also increased the chelate effect, making loss of the glyme ligand on sublimation less likely. Single crystal X-ray crystal diffraction studies were done on these complexes. One of the complexes was used to grow BaTiO3 thin films to display the ability for these complexes to be used as metal organic chemical vapor deposition (MOCVD) precursors. Thin films of the superconducting material YBa2Cu3O 7-x were deposited on silver substrates by MOCVD. These films were analyzed by microscopy, and the electrical properties are discussed. The first reported growth of beta-BaBLO4 thin films by MOCVD is given. These films were grown on platinum, fused silica, sapphire, and silicon. Second harmonic generation of light from a Nd:YAG laser is observed in optical measurements.

  18. Study of deposition parameters for the fabrication of ZnO thin films using femtosecond laser

    NASA Astrophysics Data System (ADS)

    Hashmi, Jaweria Zartaj; Siraj, Khurram; Latif, Anwar; Murray, Mathew; Jose, Gin

    2016-08-01

    Femtosecond (fs) pulsed laser deposition (fs-PLD) of ZnO thin film on borosilicate glass substrates is reported in this work. The effect of important fs-PLD parameters such as target-substrate distance, laser pulse energy and substrate temperature on structure, morphology, optical transparency and luminescence of as-deposited films is discussed. XRD analysis reveals that all the films grown using the laser energy range 120-230 μJ are polycrystalline when they are deposited at room temperature in a ~10-5 Torr vacuum. Introducing 0.7 mTorr oxygen pressure, the films show preferred c-axis growth and transform into a single-crystal-like film when the substrate temperature is increased to 100 °C. The scanning electron micrographs show the presence of small nano-size grains at 25 °C, which grow in size to the regular hexagonal shape particles at 100 °C. Optical transmission of the ZnO film is found to increase with an increase in crystal quality. Maximum transmittance of 95 % in the wavelength range 400-1400 nm is achieved for films deposited at 100 °C employing a laser pulse energy of 180 μJ. The luminescence spectra show a strong UV emission band peaked at 377 nm close to the ZnO band gap. The shallow donor defects increase at higher pulse energies and higher substrate temperatures, which give rise to violet-blue luminescence. The results indicate that nano-crystalline ZnO thin films with high crystalline quality and optical transparency can be fabricated by using pulses from fs lasers.

  19. Optimization of a plasma focus device as an electron beam source for thin film deposition

    NASA Astrophysics Data System (ADS)

    Zhang, T.; Lin, J.; Patran, A.; Wong, D.; Hassan, S. M.; Mahmood, S.; White, T.; Tan, T. L.; Springham, S. V.; Lee, S.; Lee, P.; Rawat, R. S.

    2007-05-01

    Electron beam emission characteristics from neon, argon, hydrogen and helium in an NX2 dense plasma focus (DPF) device were investigated in order to optimize the plasma focus device for deposition of thin films using energetic electron beams. A Rogowski coil and CCD based magnetic spectrometer were used to obtain temporal characteristics, total electron charge and energy distributions of electron emission from the NX2 DPF device. It is found that hydrogen should be the first choice for thin film deposition as it produces the highest electron beam charge and higher energy (from 50 to 200 keV) electrons. Neon is the next best choice as it gives the next highest electron beam charge with mid-energy (from 30 to 70 keV) electrons. The operation of NX2 with helium at voltages above 12 kV produces a mid-energy (from 30 to 70 keV) electron beam with low-electron beam charge, however, argon is not a good electron beam source for our NX2 DPF device. Preliminary results of the first ever thin film deposition using plasma focus assisted pulsed electron deposition using a hydrogen operated NX2 plasma focus device are presented.

  20. Optical properties of ZnO thin films grown on diamond-like carbon by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Li, Shao-lan; Zhang, Li-chun; Dong, Yan-feng; Zhao, Feng-zhou

    2012-11-01

    ZnO/diamond-like carbon (DLC) thin films are deposited by pulsed laser deposition (PLD), and the room-temperature photoluminescence (PL) is investigated. Using a fluorescence spectrophotometer, we obtain the PL spectra of DLC/Si and ZnO/Si thin films deposited at different substrate temperatures. The ZnO/DLC thin films show a broadband emission almost containing the entire visible spectrum. The Gaussian fitting curves of PL spectra reveal that the visible emission of ZnO/DLC thin films consists of three peaks centered at 381 nm, 526 nm and 682 nm, which are attributed to the radiative recombination of ZnO and DLC, respectively. The Commission International de l'Eclairage (CIE) 1931 ( x, y) chromaticity space of ZnO/DLC thin films indicates that the visible PL spectrum is very close to the standard white-light region.

  1. Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors

    NASA Astrophysics Data System (ADS)

    Boyadjiev, S. I.; Georgieva, V.; Yordanov, R.; Raicheva, Z.; Szilágyi, I. M.

    2016-11-01

    Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The gas sensing of the ZnO films to NO2 was tested in the concentration interval between 10 and 5000 ppm. On the basis of registered frequency change of the QCM, for each concentration the sorbed mass was calculated. Further characterization of the films was carried out by various techniques, i.e. by SEM-EDS, XRD, ellipsometry, and FTIR spectroscopy. Although being very thin, the films were gas sensitive to NO2 already at room temperature and could register very well as low concentrations as 100 ppm, while the sorption was fully reversible. Our results for very thin ALD ZnO films show that the described fast, simple and cost-effective technology could be implemented for producing gas sensors working at room temperature and being capable to detect in real time low concentrations of NO2.

  2. Development of lead-free piezoelectric thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Abazari Torghabeh, Maryam

    As a high performance piezoelectric material widely used in sensors, actuators and other electronic devices, lead zirconate titanate (PZT) ceramics have been the center of attention for many years. However, the toxicity of these materials and their exposure to the environment during processing steps, such as calcination, sintering, machining as well as problems in recycling and disposal have been major concerns regarding their usage all around the globe for the past couple of decades. Consequently, utilizing lead-based materials for many commercial applications have been recently restricted in Europe and Asia and measures are being taken in United States as well. Therefore, there is an urgent need for lead-free piezoelectrics whose properties are comparable to those of well-known PZT materials. Recently, the discovery of ultra-high piezoelectric activity in the ternary lead-free KNaNbO3-LiTaO 3-LiSbO3 (KNN-LT-LS) and (Bi,Na)TiO3-(Bi,K)TiO 3-BaTiO3 (BNT-BKT-BT) systems have given hope for alternatives to PZT. Furthermore, the demand for new generation of environment-friendly functional devices, utilizing piezoelectric materials, inspired a new surge in lead-free piezoelectric thin film research. In this study, an attempt has been made to explore the development of lead-free piezoelectric thin films by Pulsed Laser Deposition (PLD) on SrTiO 3 substrate. While the growth and development process of KNN-LT-LS thin films was the primary goal of this thesis, a preliminary effort was also made to fabricate and characterize BNT-BKT-BT thin films. In a comprehensive and systematic process optimization study in conjunction with X-ray diffractometry, the phase evolution, stoichiometry, and growth orientation of the films are monitored as a function of deposition conditions including temperature and ambient oxygen partial pressure. Processing parameters such as substrate temperature and pressure are shown to be highly dominant in determining the phase and composition of the

  3. Chemically deposited thin films of sulfides and selenides of antimony and bismuth as solar energy materials

    NASA Astrophysics Data System (ADS)

    Nair, M. T.; Nair, Padmanabhan K.; Garcia, V. M.; Pena, Y.; Arenas, O. L.; Garcia, J. C.; Gomez-Daza, O.

    1997-10-01

    Chemical bath deposition techniques for bismuth sulfide, bismuth selenide, antimony sulfide, and antimony selenide thin films of about 0.20 - 0.25 micrometer thickness are reported. All these materials may be considered as solar absorber films: strong optical absorption edges, with absorption coefficient, (alpha) , greater than 104 cm-1, are located at 1.31 eV for Bi2Se3, 1.33 eV for Bi2S3, 1.8 eV for Sb2S3, and 1.35 eV for Sb2Se3. As deposited, all the films are nearly amorphous. However, well defined crystalline peaks matching bismuthinite (JCPDS 17- 0320), paraguanajuatite (JCPDS 33-0214), and stibnite (JCPDS 6-0474) and antimony selenide (JCPDS 15-0861) for Bi2S3, Bi2Se3, Sb2S3 and Sb2Se3 respectively, are observed when the films are annealed in nitrogen at 300 degrees Celsius. This is accompanied by a substantial modification of the electrical conductivity in the films: from 10-7 (Omega) -1 cm-1 (in as prepared films) to 10 (Omega) -1 cm-1 in the case of bismuth sulfide and selenide films, and enhancement of photosensitivity in the case of antimony sulfide films. The chemical deposition of a CuS/CuxSe film on these Vx- VIy films and subsequent annealing at 300 degrees Celsius for 1 h at 1 torr of nitrogen leads to the formation of p-type films (conductivity of 1 - 100 (Omega) -1 cm-1) of multinary composition. Among these, the formation of Cu3BiS3 (JCPDS 9-0488) and Cu3SbS4 (JCPDS 35- 0581), CuSbS2 (JCPDS 35-0413) have been clearly detected. Solar energy applications of these films are suggested.

  4. Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films

    SciTech Connect

    Saravanan, K.

    1993-12-09

    Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

  5. Control of Thin Liquid Film Morphology During Solvent-Assisted Film Deposition

    SciTech Connect

    Evmenenko, G.; Stripe, B; Dutta, P

    2010-01-01

    Liquid films of different silicate esters were deposited from volatile solvents on hydroxylated and hydrogen-passivated silicon surfaces. We show that adsorption of silicate ester molecules and the resulting structural morphology of the liquid films not only are determined by attractive van der Waals forces with contributions from electrostatic interactions between the silicone ester moieties and oxide surface sites but also can be tuned by modifying the substrate surface or by changing the liquid-solvent interactions. Our results also show the importance of the conformational properties of liquid molecules and their rearrangements at the liquid/solid interface for controlled solvent-assisted film deposition.

  6. Room temperature deposition of ZnSe thin films by successive ionic layer adsorption and reaction (SILAR) method

    SciTech Connect

    Kale, R.B.; Lokhande, C.D. . E-mail: rb_kale@yahoo.co.in

    2004-10-04

    The zinc selenide (ZnSe) thin films are deposited onto glass substrate using relatively simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The films are deposited using zinc acetate sodium selenosulphate precursors. The concentration, pH, immersion and rinsing times and number of immersion cycles have been optimized to obtain good quality ZnSe thin films. The X-ray diffraction (XRD) study and scanning electron microscopy (SEM) studies reveals nanocrystalline nature alongwith some amorphous phase present in ZnSe thin films. Energy dispersive X-ray (EDAX) analysis shows that the films are Se deficient. From optical absorption data, the optical band gap 'E{sub g}' for as-deposited thin film was found to be 2.8 eV and electrical resistivity in the order of 10{sup 7} {omega} cm.

  7. Material properties and applications of blended organic thin films with nanoscale domains deposited by RIR-MAPLE

    NASA Astrophysics Data System (ADS)

    Stiff-Roberts, Adrienne D.; McCormick, Ryan D.; Ge, Wangyao

    2015-03-01

    Resonant-infrared, matrix-assisted pulsed laser evaporation (RIR-MAPLE) has been used to deposit blended, organic thin-films with nanoscale domain sizes of constituent polymers, small molecules, or colloidal nanoparticles. In the emulsion-based RIR-MAPLE process, the target contains a nonpolar, organic solvent phase and a polar, water phase. The emulsion properties have a direct impact on the nanoscale morphology of single-component organic thin films, while the morphology of blended, organic thin films also depends on the RIR-MAPLE deposition mode. In addition to these fundamental aspects, applications of blended organic films (organic solar cells, anti-reflection coatings, and multi-functional surfaces) deposited by emulsion-based RIR-MAPLE are presented. Importantly, domain sizes in the blended films are critical to thin-film functionality.

  8. Influence of solution deposition rate on properties of V2O5 thin films deposited by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M.

    2016-07-01

    Vanadium oxide (V2O5) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl3 in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films' crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V2O5 film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

  9. Meter-Scale Microwave Plasma Production and its Application to Silicon Thin Film Deposition

    NASA Astrophysics Data System (ADS)

    Toyoda, Hirotaka; Takanishi, Yudai; Endo, Hirotaka; Ishijima, Tatsuo

    2008-10-01

    There has been a great need for meter-scale plasma sources for giant materials processing, such as thin film transistor manufacturing for meter-size liquid crystal display (LCD), deposition of silicon thin films for photovoltaic power generation and so on. Recently, we have developed a new technology for production of surface wave excitation [1]. In this paper, we demonstrate production of meter-scale large-area plasma with multiple waveguide lines. In the experiment, microwave power (<30 kW) is coupled to the plasma through power divider, multiple waveguide lines and slot antennas. Optical and Langmuir probe measurements of Ar/H2 plasma show production of very uniform plasma at a plasma density of 3.4 x 10^11 cm-3 and a variance of 2% within an area of 0.9 m x 0.9 m. With use of carefully-designed gas manifold, microcrystalline silicon films are deposited on sample substrates. Deposition rate of ˜0.3 nm/s with a variance of less than 10 % is obtained within an area of 0.6 m x 0.7 m. Uniformity of film quality such as film crystallinity is also confirmed. [1] H. Sugai, Y. Nojiri, T. Ishijima and H. Toyoda, 6^th Int. Conf. on Reactive Plasmas and 23^rd Symp. on Plasma Processing, (Matsushima, 2006), p.17.

  10. Study of Chemical Bath Deposition of ZnS Thin Films with Substrate Vibration

    NASA Astrophysics Data System (ADS)

    Bian, Z. Q.; Xu, X. B.; Chu, J. B.; Sun, Z.; Chen, Y. W.; Huang, S. M.

    An improved chemical bath deposition (CBD) technique has been provided to prepare zinc sulfide (ZnS) thin films on glass substrates deposited at 80-82°C using a mixed aqueous solution of zinc sulfate, ammonium sulfate, thiourea, hydrazine hydrate, and ammonia at the alkaline conditions. Both the traditional magnetic agitation and the substrates vibration by hand frequently were done simultaneously during the deposition. The substrates vibration reduced the formation and residence of gas bubbles on the glass substrates during growth and resulted in growth of clean ZnS thin films with high quality. Ammonia and hydrazine hydrate were used as complexing agents. It is found that hydrazine hydrate played an important role in growth of ZnS films. The structure and microstructure of ZnS films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-vis spectroscopic methods. The XRD showed a hexagonal structure. The formed ZnS films exhibited good optical properties with high transmittance in the visible region and the band gap value was estimated to be 3.5-3.70 eV.

  11. Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kirlin, Peter S.; Binder, R.; Gardiner, R.; Brown, Duncan W.

    1990-03-01

    Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

  12. Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Juma, A.; Oja Acik, I.; Oluwabi, A. T.; Mere, A.; Mikli, V.; Danilson, M.; Krunks, M.

    2016-11-01

    Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO2 thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO2 thin films were uniform and homogeneous showing much smaller grains than the undoped TiO2 films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO2 film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO4 phase started forming after annealing at 800 °C. The optical band gap for TiO2 decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO2:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

  13. Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source

    NASA Astrophysics Data System (ADS)

    Li, Xingcun; Chen, Qiang; Sang, Lijun; Yang, Lizhen; Liu, Zhongwei; Wang, Zhenduo

    Self-limiting deposition of aluminum oxide (Al2O3) thin films were accomplished by the plasma-enhanced chemical vapor deposition using trimethyl aluminum (TMA) and O2 as precursor and oxidant, respectively, where argon was kept flowing in whole deposition process as discharge and purge gas. In here we present a novel plasma source for the atomic layer deposition technology, magnetized radio frequency (RF) plasma. Difference from the commercial RF source, magnetic coils were amounted above the RF electrode, and the influence of the magnetic field strength on the deposition rate and morphology are investigated in detail. It concludes that a more than 3 Å/ purging cycle deposition rate and the good quality of ALD Al2O3 were achieved in this plasma source even without extra heating. The ultra-thin films were characterized by including Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectric spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The high deposition rates obtained at ambient temperatures were analyzed after in-situ the diagnostic of plasmas by Langmuir probe.

  14. Effect of complexing agent on the photoelectrochemical properties of bath deposited CdS thin films

    NASA Astrophysics Data System (ADS)

    Patil, S. B.; Singh, A. K.

    2010-02-01

    In the present paper photoelectrochemical (PEC) performance of bath deposited CdS thin films based on complexing agents i.e. ammonia and triethanolamine (TEA) has been discussed. Effect of annealing has also been analyzed. The as-deposited and annealed (at 523 K for 1 h in air) films were characterized by X-ray diffraction (XRD), ultraviolet-visible (UV-vis) absorption spectroscopy, SEM, electrochemical impedance spectroscopy (EIS), and PEC properties. XRD studies revealed that the films were nanocrystalline in nature with mixed hexagonal and cubic phases. TEA complex resulted in better crystallinity. Further improvement in the crystallinity of the films was observed after air annealing. The marigold flower-like structure, in addition to flakes morphology, was observed with TEA complex, whereas for ammonia complex only flakes morphology was observed. The UV-vis absorption studies revealed that the optical absorption edge for the films with ammonia and TEA complex was around 475 nm and 500 nm, respectively. Annealing of the films resulted in red shift in the UV-vis absorption. The PEC cell performance of CdS films was found to be strongly affected by crystallinity and morphology of the films resulted due to complexing agent and annealing. The air annealed film deposited using TEA complex showed maximum short circuit current density ( Jsc) and open circuit voltage ( Voc) i.e. 99 μA/cm 2 and 376 mV respectively, under 10 mW/cm 2 of illumination. The films deposited using TEA complex showed good stability under PEC cell conditions.

  15. Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kamaruzaman, Dayana; Ahmad, Nurfadzilah; Annuar, Ishak; Rusop, Mohamad

    2013-11-01

    Nanostructured iodine-post doped amorphous carbon (a-C:I) thin films were prepared from camphor oil using a thermal chemical vapor deposition (TCVD) technique at different doping temperatures. The structural properties of the films were studied by field-emission scanning electron microscopy (FESEM), energy-dispersive spectroscopy (EDS), Raman, and Fourier transform infrared (FTIR) studies. FESEM and EDS studies showed successful iodine doping. FTIR and Raman studies showed that the a-C:I thin films consisted of a mixture of sp2- and sp3-bonded carbon atoms. The optical and electrical properties of a-C:I thin films were determined by UV-vis-NIR spectroscopy and current-voltage (I-V) measurement respectively. The optical band gap of a-C thin films decreased upon iodine doping. The highest electrical conductivity was found at 400 °C doping. Heterojunctions are confirmed by rectifying the I-V characteristics of an a-C:I/n-Si junction.

  16. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation

    NASA Astrophysics Data System (ADS)

    Xinkun, Wu; Wei, Liu; Shuying, Cheng; Yunfeng, Lai; Hongjie, Jia

    2012-02-01

    Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature, and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 °C for 3 h Fabricated CZTS thin films were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, ultraviolet-visible-near infrared spectrophotometry, the Hall effect system, and 3D optical microscopy. The experimental results show that, when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15, the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm-1 in the energy range 1.5-3.5 eV, and a direct band gap of about 1.47 eV. The carrier concentration, resistivity and mobility of the CZTS film are 6.98 × 1016 cm-3, 6.96 Ω·cm, and 12.9 cm2/(V·s), respectively and the conduction type is p-type. Therefore, the CZTS thin films are suitable for absorption layers of solar cells.

  17. Formation of Lamellar Heterolattices in Block Copolymer Thin Films by Sequential Electrospray Deposition

    NASA Astrophysics Data System (ADS)

    Choo, Youngwoo; Hu, Hanqiong; Toth, Kristof; Osuji, Chinedum

    Electrospray deposition (ESD) of block copolymers (BCPs) on a heated substrate provides precise control over the formation of BCP thin films. This continuous deposition process allows one to fabricate heterogeneously assembled thin films by altering the deposition materials. Here, we demonstrate such the sequential ESD of lamellae-forming poly(styrene- b-4-vinylpyridine) BCPs with differing molecular weights and explore the morphology of the composite films. The resulting structure of the heterolattice interface was a strong function of temperature. Sharp interfaces with abrupt changes in the lamellar period (L0) were observed at lower deposition temperatures (150 - 170 °C), while higher temperature (190 °C) produced a smooth variation in the lamellar period from one molecular weight to the next. Furthermore, the ordering kinetics of a secondary layer which was deposited onto the primary layer could be substantially enhanced depending on the molecular weight of the polymer present in the underlying primary layer. We elucidate these findings in the context of temperature and molecular weight dependent diffusion dynamics of the polymers in the melt which control the inter-mixing of the layers. We gratefully acknowledge funding by NSF DRM-1410568.

  18. High Ordered Structure of Polyurea Thin Films Prepared by Vapor Deposition Polymerization

    NASA Astrophysics Data System (ADS)

    Kumagai, Taisuke; Suga, Takahiro; Kubono, Atushi

    Vapor deposition polymerization(VDP) have been utilized for producing polymeric thin films, such as polyimides, polyamides, and polyureas by co-evaporation of two types of bifunctional monomers onto the substrate surface. Through the use of poling treatment, polyureas acquire pyroelectric and piezoelectric activities comparable to those of PVDF. In this study, polyurea thin films were prepared by vapor deposition polymerization. The ordered structures and physical properties were investigated by means of infrared spectroscopy. The infrared spectra indicate that the dipoles of urea groups in the polymer were oriented normal to the surface of substrate. This results that strong interaction between the substrate interface and the urea groups results in the orientation of the urea dipoles during annealing. Moreover, the introduction of aliphatic moieties into the polymer main chain gives rise to easy thermal reorientation of the dipoles in comparison with aromatic moieties. In comparison with aromatic moieties which have rigid frame structure need poling treatment to dipoles reorientation.

  19. Method for controlling energy density for reliable pulsed laser deposition of thin films

    SciTech Connect

    Dowden, P. C. E-mail: qxjia@lanl.gov; Bi, Z.; Jia, Q. X. E-mail: qxjia@lanl.gov

    2014-02-15

    We have established a methodology to stabilize the laser energy density on a target surface in pulsed laser deposition of thin films. To control the focused laser spot on a target, we have imaged a defined aperture in the beamline (so called image-focus) instead of focusing the beam on a target based on a simple “lens-focus.” To control the laser energy density on a target, we have introduced a continuously variable attenuator between the output of the laser and the imaged aperture to manipulate the energy to a desired level by running the laser in a “constant voltage” mode to eliminate changes in the lasers’ beam dimensions. This methodology leads to much better controllability/reproducibility for reliable pulsed laser deposition of high performance electronic thin films.

  20. Plasma Processing of Functional Thin Films by Sputtering Deposition Using Metal-Based Powder Target

    NASA Astrophysics Data System (ADS)

    Kawasaki, Hiroharu; Ohshima, Tamiko; Ihara, Takeshi; Arafune, Kento; Taniyama, Daichi; Yagyu, Yoshihito; Suda, Yoshiaki

    2013-11-01

    Titanium-based functional thin films were prepared by a sputtering deposition method using a metal powder target, and the electron density and temperature of the processing plasma were investigated. The electron density of the plasma, measured by a probe method, when using a powder target was higher than that when using a bulk target. The deposition rate when using a powder target was also higher than that in the case of a bulk target. These results may be due to the net-cathode area of the powder target being larger than that of the bulk target. X-ray photoelectron spectroscopy, X-ray diffraction measurements, and atomic force microscopy images of the films prepared using the Ti powder target indicated nearly the same properties as those of films prepared using a Ti bulk target, and the prepared films are oxide. These results suggest that TiO2 thin films can be prepared using a Ti powder target and that the quality is almost the same as those of films prepared using a Ti bulk target.

  1. Stretchability of Silver Films on Thin Acid-Etched Rough Polydimethylsiloxane Substrates Fabricated by Electrospray Deposition

    NASA Astrophysics Data System (ADS)

    Mehdi, S. M.; Cho, K. H.; Kang, C. N.; Choi, K. H.

    2015-07-01

    This paper investigates the fabrication of Ag films through the electrospray deposition (ESD) technique on sub-millimeter-thick acid-etched rough polydimethylsiloxane (PDMS) substrates having both low and high modulus of elasticity. The main focus of the study is on the stretchable behavior of ESD-deposited Ag nanoparticles-based thin films on these substrates when subjected to axial strains. Experimental results suggest that the as-fabricated films on thin acid-etched rough low modulus PDMS has an average stretchability of 5.6% with an average increase in the resistance that is 23 times that of the initial resistance at electrical failure (complete rupture of the films). Comparatively, the stretchability of Ag films on the high modulus PDMS was found to be 3 times higher with 4.65 times increase in the resistance at electrical failure. Also, a high positive value of the piezoresistive coefficient for these films suggests that the resistivity changes during stretching, and thus deviation from the simplified models is inevitable. Based on these results, new models are presented that quantify the changes in resistance with strain.

  2. Biocompatible Mn2+-doped carbonated hydroxyapatite thin films grown by pulsed laser deposition.

    PubMed

    György, E; Toricelli, P; Socol, G; Iliescu, M; Mayer, I; Mihailescu, I N; Bigi, A; Werckman, J

    2004-11-01

    Mn(2+)-doped carbonated hydroxyapatite (Mn-CHA) thin films were obtained by pulsed laser deposition on Ti substrates. The results of the performed complementary diagnostic techniques, X-ray diffraction, infrared spectroscopy, X-ray photoelectron spectroscopy, and energy dispersive X-ray spectroscopy investigations indicate that the films are crystalline with a Ca/P ratio of about 1.64-1.66. The optimum conditions, when nearly stoichiometric crystalline thin films were deposited, were found to be 10 Pa oxygen pressure, 400 degrees C substrate temperature, and postdeposition heat treatment in water vapors at the same substrate temperature. The films were seeded with L929 fibroblast and hFOB1.19 osteoblast cells and subjected to in vitro tests. Both fibroblast and osteoblast cells have a good adherence on the Mn-CHA film and on the Ti or polystyrene references. Proliferation and viability tests showed that osteoblast cells growth on Mn-CHA-coated Ti was enhanced as compared to uncoated pure Ti surfaces. Caspase-1 activity was not affected significantly by the material, showing that Mn-CHA does not induce apoptosis of cultured cells. These results demonstrate that Mn-CHA films on Ti should provoke a faster osteointegration of the coated implants as compared to pure Ti. (c) 2004 Wiley Periodicals, Inc. J Biomed Mater Res 71A: 353-358, 2004.

  3. Thermodynamics and kinetic behaviors of thickness-dependent crystallization in high-k thin films deposited by atomic layer deposition

    SciTech Connect

    Nie, Xianglong; Ma, Fei; Ma, Dayan; Xu, Kewei

    2015-01-15

    Atomic layer deposition is adopted to prepare HfO{sub 2} and Al{sub 2}O{sub 3} high-k thin films. The HfO{sub 2} thin films are amorphous at the initial growth stage, but become crystallized when the film thickness (h) exceeds a critical value (h{sub critical}{sup *}). This phase transition from amorphous to crystalline is enhanced at higher temperatures and is discussed, taking into account the effect of kinetic energy. At lower temperatures, the amorphous state can be maintained even when h>h{sub critical}{sup *} owing to the small number of activated atoms. However, the number of activated atoms increases with the temperature, allowing crystallization to occur even in films with smaller thickness. The Al{sub 2}O{sub 3} thin films, on the other hand, maintain their amorphous state independent of the film thickness and temperature owing to the limited number of activated atoms. A thermodynamic model is proposed to describe the thickness-dependent phase transition.

  4. Plasma-Assisted Laser Deposition of High T(c) Oxide Superconducting Thin Films.

    NASA Astrophysics Data System (ADS)

    Witanachchi, Sarath

    1990-01-01

    Since the discovery of the high T_ {rm c} oxide superconductor YBa _2Cu_3O _7 a great deal of attention has been given to the fabrication of superconducting thin films of this material. Thin films of the new superconductor have an immense importance in scientific research, such as microwave, infrared and critical current studies, and also in applications, such as Josephson junction based digital computer circuits, SQUID (Superconducting Quantum Interference Devices), transmission lines, and interconnectors. Integration of these films with semiconductors and multilayer capabilities are important for future practical uses. For most of these applications, a low temperature in-situ fabrication process is designed to obtain smooth surfaces and sharp interfaces. Less than 500^circC growth temperatures would be compatible with the existing semiconductor technology. At the beginning of this research project, the lowest deposition temperature reported for the fabrication of in-situ superconducting films was about 650^circC. Our goal was to develop a technique that would enable us to fabricate in-situ high T_{ rm c} superconducting films at a substrate temperature lower than 650^circC. By incorporating a weak oxygen plasma in the laser evaporation zone, we have been able to develop a novel plasma assisted laser deposition (PLD) technique to grow YBaCuO films that are superconducting in the as-deposited state. Using this technique, good quality superconducting films with mirror -like surfaces have been grown at substrate temperatures as low as 500^circC. YBaCuO films were deposited on single crystal substrates, SrTiO_3, ZrO _2, MgO, sapphire and Si, and also on flexible stainless steel substrates. Films deposited on SrTiO _3 at 500^circC showed a critical temperature of 86K and a critical current of 10^5 A/cm^2 at 80K and 5 times 10^6 A/cm^2 at 4.3K. The possibility of improving the superconducting properties of the films deposited on sapphire, Si, and stainless steel by

  5. Structural and optical properties of Al/ZnO thin films deposited by radio frequency sputtering

    NASA Astrophysics Data System (ADS)

    Osanyinlusi, O.; Mukolu, A. I.; Zebaze Kana, M. G.

    2016-09-01

    The effects of annealing temperature and variation of sample thickness on the structural and optical properties of zinc oxide thin films with aluminium contact (Al/ZnO) have been investigated. The study involved the synthesis of a bilayer thin film of Al/ZnO with varied thicknesses on a glass slide substrate by using radio frequency magnetron sputtering deposition technique. 99.99% pure ZnO and aluminium were used as the sputtering target. The films were then annealed in vacuum at annealing temperatures of 200 °C and 400 °C. The structural and optical properties of Al/ZnO thin films grown were characterized by x-ray diffraction (XRD) and optical measurements respectively. The results obtained from the XRD patterns showed that Al/ZnO films (both as-deposited and annealed), exhibits a crystalline structure with (002) preferred orientation. The peak intensity of the preferred plane increases as the annealing temperature increases. The optical studies of the Al/ZnO films showed a maximum value of transmittance ranging from 82% to 91% depending on the condition of the films. A decrease in transmittance as the thickness of the films increases was observed. The transmittance also increased with increasing annealing temperature. The energy gaps (E g) were determined from the transmittance data and found to be in the range 3.73-3.83 eV. The results obtained from the experiment also show that the optical band gap increases as the thickness and annealing temperature increase.

  6. Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Zhou, Yang; Tan, Qing; Zhu, Jie; Li, Siyang; Liu, Chenjin; Lei, Yuxiong; Li, Liangliang

    2015-06-01

    n-Type Zr-Ni-Sn thermoelectric thin films with thickness of 60 nm to 400 nm were deposited by radiofrequency magnetron sputtering. The microstructure of the Zr-Ni-Sn thin films was examined by x-ray diffractometry and high-resolution transmission electron microscopy, revealing an amorphous microstructure. The thermal conductivity of the amorphous films was measured by the ultrafast laser pump-probe thermoreflectance technique, revealing values of 1.4 W m-1 K-1 to 2.2 W m-1 K-1, smaller than that of bulk material because of the amorphous microstructure of the films. The effects of the sputtering power on the composition, Seebeck coefficient, and electrical conductivity of the films were investigated. The largest Seebeck coefficient and power factor were achieved at 393 K, being -112.0 μV K-1 and 2.66 mW K-2 m-1, respectively. The low thermal conductivity and high power factor indicate that amorphous Zr-Ni-Sn thin films could be a promising material for use in thermoelectric microdevices.

  7. Organo-layered double hydroxides composite thin films deposited by laser techniques

    NASA Astrophysics Data System (ADS)

    Birjega, R.; Vlad, A.; Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M.; Zavoianu, R.; Raditoiu, V.; Corobea, M. C.

    2016-06-01

    We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn2+/Al3+ ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  8. Functionalized self-assembled monolayers as templates for mineral oxide thin film deposition

    NASA Astrophysics Data System (ADS)

    Collins, Rochael Jeannine

    Alkyl-trichlorosilanes functionalized with thioacetate and nitrate groups were synthesized and deposited to form Self-Assembled Monolayers (SAMs). In situ transformation of the thioacetate and nitrate moieties yielded monolayers functionalized with sulfonate and alcohol groups, respectively. Percent conversion was determined to be 98% by X-ray photoelectron spectroscopy (XPS) for the thioacetate to sulfonate transformation, and 100% by XPS and IR for the nitrate to alcohol transformation. The as-deposited and transformed monolayers were characterized by wettability, XPS and ellipsometry. The alcohol terminated films were investigated as templates for the deposition of subsequent self-assembled monolayers. Multilayers, up to three layers, were demonstrated for nitrate films, with each layer adding an average of 2.25 nm to the overall film thickness. A fourth layer of octadecyltrichlorosilane was deposited and was found to add an additional 1.31 nm to the structure. Analysis of the multilayer constructions revealed increasing disorder as the number of layers increases. Other in situ functionalizations of alcohol terminated monolayers were demonstrated. Transformation to electrophilic, haloacetyl films was accomplished, and their reactivity with thiol nucleophiles was examined. In addition, the alcohol terminated SAMs were functionalized, in situ, with sulfate and phosphate groups. These films were characterized by wettability, XPS and ellipsometry. Furthermore, photopatterning of terminal functional groups was accomplished by irradiation through a mask. Patterned monolayers consisting of regions of thioacetate (masked)/sulfonate (irradiated) and nitrate (masked)/alcohol (irradiated) were demonstrated. Characterization of the patterned monolayers was carried out by XPS and SEM. A variety of terminal functional groups on the SAM were investigated as templates for bioinspired deposition of mineral oxide films. Thin films of FeOOH, SiOsb2,\\ TiOsb2,\\ Ysb2Osb3,\\ ZrOsb2

  9. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    PubMed Central

    Haniam, P.; Kunsombat, C.; Chiangga, S.; Songsasen, A.

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  10. Synthesis of cobalt oxides thin films fractal structures by laser chemical vapor deposition.

    PubMed

    Haniam, P; Kunsombat, C; Chiangga, S; Songsasen, A

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  11. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  12. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect

    Wang, Yuhan Kittiwatanakul, Salinporn; Lu, Jiwei; Comes, Ryan B.; Wolf, Stuart A.

    2015-03-15

    Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

  13. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Solombrino, L.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-11-01

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y.

  14. Development of Layered Multiscale Porous Thin Films by Tuning Deposition Time and Molecular Weight of Polyelectrolytes.

    PubMed

    Yu, Jing; Sanyal, Oishi; Izbicki, Andrew P; Lee, Ilsoon

    2015-09-01

    This work focuses on the design of porous polymeric films with nano- and micro-sized pores existing in distinct zones. The porous thin films are fabricated by the post-treatment of layer-by-layer assembled poly(allylamine hydrochloride) (PAH)/poly(acrylic acid) (PAA) multilayers. In order to improve the processing efficiency, the deposition time is shortened to ≈ 10 s. It is found that fine porous structures can be created even by significantly reducing the processing time. The effect of using polyelectrolytes with widely different molecular weights is also studied. The pore size is increased by using high molecular weight PAH, while high molecular weight PAA minimizes the pore size to nanometer scale. Having gained a precise control over the pore size, layered multiscale porous thin films are further built up with either a microsized porous zone on top of a nanosized porous zone or vice versa.

  15. Analysis of Crystallization on Polymeric Thin Films Deposited on Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    Cummings, Ethan

    2013-03-01

    Polyvinyl Alcohol (PVA) is a synthetic polymer containing carbon chains with hydroxide groups bonded to every other carbon. Poly (propylmethacrylisobutyl POSS co-methylmethacrylate) (POSS-MA) is a co-polymer that contains polyhedral oligomeric silsesquioxane (POSS) cages co-polymerized to a poly methyl methacrylate (PMMA) backbone. PVA is dissolved into water at various concentrations and coated onto a silica wafer using spin casting. Then, various concentrations of 30-40 wt% POSS-MA are dissolved in chloroform and deposited onto the same sample. After spin casting, these samples are analyzed using AFM and ellipsometry. Typical samples of POSS-MA and PVA/POSS-MA thin films exhibit varying rates of micro-phase separation in the form of dendritic structures. Once seperation is completed, the pixel areas of the dendrite structures are measured using IDL. These varying area determinations are normalized, and then fit to an Avrami plot by graphing ln(-ln(1-f)) vs. ln(time), where ``f'' is normalized area, and the time is the time after deposition. On the graphs, the slope is the dimensionality of the growth constant, and the y-intercept is the natural log of the rate constant (ln(k)). Samples also undergo ellipsometry to determine the thickness of the SiO2/PVA/POSS-MA thin films. Additional experiments include a process that etches away the PVA thin film layer in water, leaving the POSS-MA thin film layer on the surface of the water. The thin film is then lifted onto a TEM grid to be analyzed using TEM.

  16. Femtosecond to nanosecond excited state dynamics of vapor deposited copper phthalocyanine thin films.

    PubMed

    Caplins, Benjamin W; Mullenbach, Tyler K; Holmes, Russell J; Blank, David A

    2016-04-28

    Vapor deposited thin films of copper phthalocyanine (CuPc) were investigated using transient absorption spectroscopy. Exciton-exciton annihilation dominated the kinetics at high exciton densities. When annihilation was minimized, the observed lifetime was measured to be 8.6 ± 0.6 ns, which is over an order of magnitude longer than previous reports. In comparison with metal free phthalocyanine (H2Pc), the data show evidence that the presence of copper induces an ultrafast relaxation process taking place on the ca. 500 fs timescale. By comparison to recent time-resolved photoemission studies, this is assigned as ultrafast intersystem crossing. As the intersystem crossing occurs ca. 10(4) times faster than lifetime decay, it is likely that triplets are the dominant excitons in vapor deposited CuPc films. The exciton lifetime of CuPc thin films is ca. 35 times longer than H2Pc thin films, while the diffusion lengths reported in the literature are typically quite similar for the two materials. These findings suggest that despite appearing to be similar materials at first glance, CuPc and H2Pc may transport energy in dramatically different ways. This has important implications on the design and mechanistic understanding of devices where phthalocyanines are used as an excitonic material.

  17. Femtosecond to nanosecond excited state dynamics of vapor deposited copper phthalocyanine thin films.

    PubMed

    Caplins, Benjamin W; Mullenbach, Tyler K; Holmes, Russell J; Blank, David A

    2016-04-28

    Vapor deposited thin films of copper phthalocyanine (CuPc) were investigated using transient absorption spectroscopy. Exciton-exciton annihilation dominated the kinetics at high exciton densities. When annihilation was minimized, the observed lifetime was measured to be 8.6 ± 0.6 ns, which is over an order of magnitude longer than previous reports. In comparison with metal free phthalocyanine (H2Pc), the data show evidence that the presence of copper induces an ultrafast relaxation process taking place on the ca. 500 fs timescale. By comparison to recent time-resolved photoemission studies, this is assigned as ultrafast intersystem crossing. As the intersystem crossing occurs ca. 10(4) times faster than lifetime decay, it is likely that triplets are the dominant excitons in vapor deposited CuPc films. The exciton lifetime of CuPc thin films is ca. 35 times longer than H2Pc thin films, while the diffusion lengths reported in the literature are typically quite similar for the two materials. These findings suggest that despite appearing to be similar materials at first glance, CuPc and H2Pc may transport energy in dramatically different ways. This has important implications on the design and mechanistic understanding of devices where phthalocyanines are used as an excitonic material. PMID:27058732

  18. A flexible method for depositing dense nanocrystal thin films: impaction of germanium nanocrystals

    SciTech Connect

    Holman, Zachary C.; Kortshagen, Uwe R.

    2010-07-27

    Nanomaterials are exciting candidates for use in new optical and electronic devices ranging from solar cells to gas sensors. However, to reach their full potential, nanomaterials must be deposited as dense thin films on flexible substrates using inexpensive processing technologies such as roll-to-roll printing. We report a new, flexible technique for depositing aerosolized nanocrystals that lends itself to roll-to-roll processes. Germanium nanocrystals produced in a plasma are accelerated through a slit orifice by a supersonic gas jet and are impacted onto a translated substrate. A uniform nanocrystal film is quickly deposited over large areas, and features as small as 2 µm can then be patterned using conventional lift-off photolithography. The density of a deposited film depends on the pressures upstream and downstream of the orifice, their ratio, and the distance between the orifice and the substrate. Nanocrystal film densities exceeding 50% of the density of bulk germanium are routinely achieved with several sizes of nanocrystals, approaching the theoretical limit for randomly packed spheres. A simple model is presented that shows that the calculated nanocrystal velocity upon impaction is strongly correlated with the resulting film density.

  19. Cubic AlN thin film formation on quartz substrate by pulse laser deposition

    NASA Astrophysics Data System (ADS)

    Biju, Zheng; Wen, Hu

    2016-06-01

    Cubic AlN thin films were obtained on quartz substrate by pulse laser deposition in a nitrogen reactive atmosphere. A Nd-YAG laser with a wavelength of 1064 nm was used as the laser source. In order to study the influence of the process parameters on the deposited AlN film, the experiments were performed at various technique parameters of laser energy density from 70 to 260 J/cm2, substrate temperature from room temperature to 800 °C and nitrogen pressure from 0.1 to 50 Pa. X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy were applied to characterize the structure and surface morphology of the deposited AlN films. It was found that the structure of AlN films deposited in a vacuum is rocksalt under the condition of substrate temperature 600-800 °C, nitrogen pressure 10-0.1 Pa and a moderate laser energy density (190 J/cm2). The high quality AlN film exhibited good optical property. Project supported by the Yunnan Provincial Natural of Science Foundation of China (No. KKSY201251089).

  20. Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide

    SciTech Connect

    Kawai, Shoichi Sobue, Susumu; Okuno, Eiichi; Yamazaki, Ryuta; Ichimura, Masaya

    2014-03-01

    Iron sulfide thin films were fabricated by the electrochemical deposition method from an aqueous solution containing FeSO{sub 4} and Na{sub 2}S{sub 2}O{sub 3}. The composition ratio obtained was Fe:S:O = 36:56:8. In the photoelectrochemical measurement, a weak negative photo-current was observed for the iron sulfide films, which indicates that its conduction type is p-type. No peaks were observed in X-ray diffraction pattern, and thus the deposited films were considered to be amorphous. For a heterojunction with ZnO, rectification properties were confirmed in the current-voltage characteristics. Moreover, the current was clearly enhanced under AM1.5 illumination.

  1. Hard boron oxide thin-film deposition using electron cyclotron resonance microwave plasmas

    NASA Astrophysics Data System (ADS)

    Gorbatkin, S. M.; Rhoades, R. L.; Tsui, T. Y.; Oliver, W. C.

    1994-11-01

    Hard boron suboxide thin films were deposited in an electron cyclotron resonance (ECR) microwave plasma system at substrate temperatures below 300 °C. A high-temperature effusion cell, operated at 2200°-2250 °C, was used for injection of boron downstream of an Ar/O2 ECR plasma. B ion bombardment is estimated to have been up to 6% of the total boron flux, and Ar ion bombardment is estimated to have contributed ˜100 eV/deposited atom. Boron suboxide films with oxygen concentrations of 11% exhibited hardnesses up to 30 GPa, equal to sapphire and near that of pure boron. The hardness/modulus ratio was 0.1, significantly better than that of sapphire (0.067) or solid boron (0.074), indicating these films may be of interest for a variety of tribological applications.

  2. Hard boron oxide thin-film deposition using electron cyclotron resonance microwave plasmas

    SciTech Connect

    Gorbatkin, S.M.; Rhoades, R.L.; Tsui, T.Y.; Oliver, W.C. )

    1994-11-21

    Hard boron suboxide thin films were deposited in an electron cyclotron resonance (ECR) microwave plasma system at substrate temperatures below 300 [degree]C. A high-temperature effusion cell, operated at 2200[degree]--2250 [degree]C, was used for injection of boron downstream of an Ar/O[sub 2] ECR plasma. B ion bombardment is estimated to have been up to 6% of the total boron flux, and Ar ion bombardment is estimated to have contributed [similar to]100 eV/deposited atom. Boron suboxide films with oxygen concentrations of 11% exhibited hardnesses up to 30 GPa, equal to sapphire and near that of pure boron. The hardness/modulus ratio was 0.1, significantly better than that of sapphire (0.067) or solid boron (0.074), indicating these films may be of interest for a variety of tribological applications.

  3. Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition

    PubMed

    Lowndes; Geohegan; Puretzky; Norton; Rouleau

    1996-08-16

    Pulsed laser deposition (PLD) is a conceptually and experimentally simple yet highly versatile tool for thin-film and multilayer research. Its advantages for the film growth of oxides and other chemically complex materials include stoichiometric transfer, growth from an energetic beam, reactive deposition, and inherent simplicity for the growth of multilayered structures. With the use of PLD, artificially layered materials and metastable phases have been created and their properties varied by control of the layer thicknesses. In situ monitoring techniques have provided information about the role of energetic species in the formation of ultrahard phases and in the doping of semiconductors. Cluster-assembled nanocrystalline and composite films offer opportunities to control and produce new combinations of properties with PLD.

  4. Radio-frequency sputter deposition of boron nitride based thin films

    SciTech Connect

    Mitterer, C.; Rodhammer, P.; Stori, H.; Jeglitsch, F.

    1989-07-01

    Thin films (approx.2 ..mu..m) of boron nitride, titanium boron nitride, and titanium aluminum boron nitride have been grown on molybdenum, niobium, and cemented carbide substrates employing nonreactive as well as reactive rf magnetron sputter deposition from either a BN, a TiN-BN, or a TiN--AlN--BN target. Substrates have been rf biased, with dc potentials up to /minus/200 V. By means of /ital nonreactive/ sputtering mixed-phase structures with dominant phases B/sub 48/B/sub 2/N/sub 2/ (using a BN target), or B/sub 48/B/sub 2/N/sub 2/ and hexagonal Ti--B--N (using a TiN--BN or a TiN--AlN--BN target) are formed. /ital Reactive/ deposition leads to the existence of hexagonal BN in all deposition modes. In the cases of Ti--B--N and Ti--Al--B--N films this phase is accompanied by fcc Ti--B--N. SEM cross sections revealed very fine grained to fracture-amorphous film structures. Hardness measurements gave the following maximum HV 0.02 values: B--N films 2800, Ti--B--N films 2750, and Ti--Al--B--N films 1650.

  5. Photoluminescence and structure of sputter-deposited Zn2SiO4:Mn thin films

    NASA Astrophysics Data System (ADS)

    Lee, Yeon Oh; Kim, Joo Han

    2016-01-01

    Mn-doped Zn2SiO4 thin films were deposited on Si (100) substrates by radio-frequency (RF) magnetron sputtering. The deposited films were then annealed at temperatures ranging from 600 to 1200 °C in an air ambient for 1 hour. The as-deposited Zn2SiO4:Mn films exhibited an amorphous structure having a smooth surface and showed no photoluminescence (PL). Annealing at 600 °C was found to have little effect on the properties of the films. The films still remained amorphous with no PL. After annealing at 800 °C, the films were crystallized in a mixture of orthorhombic β-Zn2SiO4 and rhombohedral α-Zn2SiO4 phases. These films showed a PL emission spectrum that could be resolved into two bands, one centered at 520 nm in the green region and the other at 571 nm in the yellow region. The green PL emission originated from the 4T1 → 6A1 intrashell transition of Mn2+ ions in the α-Zn2SiO4 phase while the yellow emission was attributed to Mn2+ ions in β-Zn2SiO4. The films annealed at and above a temperature of 900 °C exhibited only the α-Zn2SiO4 phase, and the PL spectra of these films showed only the green emission band with a peak maximum at around 523 nm. The PL emission intensity increased with increasing annealing temperature, which was due to the better crystalline quality and the rougher surface morphology of the Zn2SiO4:Mn films annealed at higher temperatures.

  6. Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

    2010-09-01

    We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

  7. Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide

    SciTech Connect

    Sinha, Soumyadeep; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-15

    Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide thin films by atomic layer deposition (ALD) in the temperature ranging from 100 to 200 °C. Growth rate of 1.3 Å per ALD cycle is achieved by in-situ quartz crystal microbalance measurements. It is found that the growth rate per ALD cycle is highly dependent on the purging time between the two precursors. Increased purge time results in higher growth rate. Surface limited chemistry during each ALD half cycle is studied by in-situ Fourier transformed infrared vibration spectroscopy. Time of flight secondary ion-mass spectroscopy measurement is used to confirm elemental composition of the deposited films.

  8. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    SciTech Connect

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-07-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  9. Deposition of Chromium Thin Films on Stainless Steel-304 Substrates Using a Low Energy Plasma Focus Device

    NASA Astrophysics Data System (ADS)

    Javadi, S.; Ghoranneviss, M.; Hojabri, A.; Habibi, M.; Hosseinnejad, M. T.

    2012-06-01

    In this paper, we study thin films of chromium deposited on stainless steel-304 substrates using a low energy (1.6 kJ) plasma focus device. The films of chromium are likewise deposited with 25 focus shots each at various axial distances from the top of the anode (3, 5, 7, 9 and 11 cm). We also consider different angular positions with respect to the anode axis (0°, 15° and 30°) at a distance of 5 cm from the anode tip to deposit the chromium films on the stainless steel substrates. To characterize the structural properties of the films, we benefit from X-ray diffraction (XRD) analysis. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are applied as well to study the surface morphology of these deposited films. Furthermore, we make use of Vicker's micro-hardness measurements to investigate the mechanical properties of chromium thin films. The XRD results show that the degree of crystallinity of chromium thin films depends on the substrate axial and angular positions. The AFM images illustrate that the film deposited at the distance of 5 cm and the angular position of 0° has quite a uniform surface with homogeneous distribution of grains on the film surface. From the hardness results, we observe that the sample deposited at the axial distance of 5 cm from the anode tip and at the angle of 0° with respect to the anode axis, is harder than the other deposited films.

  10. Diamond thin films grown by microwave plasma assisted chemical vapor deposition

    SciTech Connect

    Leksono, M.

    1991-09-05

    Undoped and boron doped diamond thin films have been successfully grown by microwave plasma chemical vapor deposition from CH{sub 4}, H{sub 2}, and B{sub 2}H{sub 6}. The films were characterized using x- ray diffraction techniques, Raman and infrared spectroscopies, scanning electron microscopy, secondary ion mass spectrometry, and various electrical measurements. The deposition rates of the diamond films were found to increase with the CH{sub 4} concentration, substrate temperature, and/or pressure, and at 1.0% methane, 900{degrees}C, and 35 Torr, the value was measured to be 0.87 {mu}m/hour. The deposition rate for boron doped diamond films, decreases as the diborane concentration increases. The morphologies of the undoped diamond films are strongly related to the deposition parameters. As the temperature increases from 840 to 925 C, the film morphology changes from cubo-octahedron to cubic structures, while as the CH{sub 4} concentration increases from 0.5 to 1.0%, the morphology changes from triangular (111) faces with a weak preferred orientation to square (100) faces. At 2.0% Ch{sub 4} or higher the films become microcrystalline with cauliflower structures. Scanning electron microscopy analyses also demonstrate that selective deposition of undoped diamond films has been successfully achieved using a lift-off process with a resolution of at least 2 {mu}m. The x-ray diffraction and Raman spectra demonstrate that high quality diamond films have been achieved. The concentration of the nondiamond phases in the films grown at 1.0% CH{sub 4} can be estimated from the Raman spectra to be at less than 0.2% and increases with the CH{sub 4} concentration. The Raman spectra of the boron doped diamond films also indicate that the presence of boron tends to suppress the nondiamond phases in the films. Infrared spectra of the undoped diamond films show very weak CH stretch peaks which suggest that the hydrogen concentration is very low.

  11. Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water

    NASA Astrophysics Data System (ADS)

    Cho, Wontae; Sung, Kiwhan; An, Ki-Seok; Sook Lee, Sun; Chung, Taek-Mo; Kim, Yunsoo

    2003-07-01

    Dimethylaluminum isopropoxide (DMAI), (CH3)2AlOCH(CH3)2, a precursor originally developed for the metalorganic chemical vapor deposition of alumina, was adopted as a new precursor for growing aluminum oxide thin films on HF-treated Si(001) substrates by atomic layer deposition (ALD). This precursor is stable for a prolonged period of storage time under inert atmosphere (such as in nitrogen or argon) and does not react vigorously in air, and therefore is easy to handle and safe, without causing hazards. The self-limiting ALD process by alternate surface reactions of DMAI and H2O was confirmed by thicknesses of the grown aluminum oxide films measured as functions of the DMAI pulse time and the number of DMAI-H2O cycles. A maximum growth rate of ~1.06 Å/cycle was achieved in the substrate temperature range ~120-150 °C. Growth of stoichiometric Al2O3 thin films without appreciable carbon incorporation was verified by Rutherford backscattering spectrometry. Atomic force microscopy images showed atomically flat and uniform surfaces. In particular, a cross-sectional high-resolution transmission electron microscopy image of an Al2O3 film shows that there is no distinguishable interfacial oxide layer between the Al2O3 film and the Si substrate. These results prove the validity of DMAI as a new ALD source for aluminum oxide.

  12. Reaction mechanism of electroless metal deposition using ZnO thin film (I): Process of catalyst formation

    SciTech Connect

    Yoshiki, Hajime; Hashimoto, Kazuhito; Fujishima, Akira

    1995-02-01

    The reaction mechanism of electroless metal deposition proceeding selectively on a ZnO thin film coated on a glass substrate was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and inductively coupled plasma measurements. The ZnO thin film was activated for electroless metal deposition just by immersion in 1.1 mM PdCl{sub 2} solution adjusted to pH 2.5. In this process, PD(II) was selectively adsorbed on the ZnO thin film while simultaneously the ZnO underwent dissolution. The dissolution of ZnO thin film easily occurred on the (002) face with polarity. The strongly adsorbed Pd(II) was reduced to Pd(0) by a reducing agent in the electroless plating bath and this served as a catalyst center. As a result, metal layers were obtained selectively on the ZnO thin film in the electroless plating bath.

  13. Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    2016-04-01

    The aim of this paper is to expand the body of knowledge about the silicon doped gallium nitride thin films deposited on different substrates. The physical properties of the Si doped GaN thin films deposited on the glass and polyethylene terephthalate substrates by thermionic vacuum arc which is plasma production technique were investigated. Thermionic vacuum arc method is a method of producing pure material plasma. The Si doped GaN thin films were analyzed using the following methods and the devices: atomic force microscopy, x-ray diffraction device, spectroscopic ellipsometer and energy dispersive x-ray spectroscopy detector. The produced Si doped GaN thin films are in the (113) orientation. The thicknesses and refractive index were determined by using Cauchy dispersion model. Surface morphologies of produced thin films are homogenous and low roughness. Our analysis showed that the thermionic vacuum arc method present important advantages for optical and industrial applications.

  14. Design and Development of Binary Diffractive Germanium Lens by Thin Film Deposition

    NASA Astrophysics Data System (ADS)

    Alshami, M.; Wabby, A.; Mousselly, M. F.

    2015-11-01

    The design and development of infrared (λ: [8]-[12] μm) binary diffractive germanium lens (BDGL) by two - steps thin film deposition (Physical vapor deposition (PVD) technique) is presented. The optical design of the required elements using the optical design code Zemax, the design of the 4 steps binary surface and its required metallic masks using the programming language Delphi, the procedures of fabrication, and the measurement of the resulting profile, were presented. The comparison between the refractive/diffractive lenses by measuring the minimum resolvable temperature difference (MRTD) shows the advantages of binary diffractive surface.

  15. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Dimitrakellis, P.; Kalampounias, A. G.; Spiliopoulos, N.; Amanatides, E.; Mataras, D.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-07-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  16. Deposition of Tungsten Thin Films on Flexible Polymer Substrates by Direct-Current Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Huo, Zhenxuan; Jiao, Xiangquan; Zhong, Hui; Shi, Yu

    2015-11-01

    We have investigated thin tungsten films deposited on polymer substrates by direct-current magnetron sputtering under different conditions. Unlike tungsten films deposited on rigid substrates, films on polymer substrates grew at appropriate sputtering power, low sputtering pressure, and low substrate temperature. High sputtering power results in tungsten films with good crystal orientation, compact microstructure, and low electrical resistivity. However, high-power sputtering damages the polymer substrates. Enhancing sputtering pressure substantially degrades tungsten orientation and increases electrical resistivity. Furthermore, a slight increase in substrate temperature results in tungsten films with good crystal orientation, a dense microstructure, and low electrical resistivity. Nonetheless, a high substrate temperature results in soft and deformed polymer substrates; this degrades tungsten crystal orientation and substantially roughens tungsten films. On the basis of this study, compact and flat tungsten films with low electrical resistivity can be obtained at a sputtering power of 69 W, a sputtering pressure of 1 Pa, a substrate temperature of 100°C, and a distance between target and substrate of 60 mm.

  17. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    SciTech Connect

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-15

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  18. Growth of calcium phosphate thin films by in situ assisted ultraviolet pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Craciun, V.; Iliescu, M.; Mihailescu, I. N.; Pelletier, H.; Mille, P.; Werckmann, J.

    2003-03-01

    Calcium phosphate (CaP) thin films including hydroxyapatite were intensively studied in order to optimize the technology of the bone prostheses manufacturing. A drawback in the CaP films processing is the poor mechanical characteristics, especially hardness, tensile strength and adherence to the metallic substrate. We report a new method for the growth of high quality CaP films with substantial improvement of the mechanical properties: pulsed laser deposition (PLD) assisted by in situ ultraviolet (UV) radiation emitted by a low pressure Hg lamp. The depositions were made on Si and Ti-5Al-2.5Fe alloys in very low ambient oxygen at pressures of 10 -2 to 10 -1 Pa with the substrates maintained at 500-600 °C temperature. The films were analyzed by electron microscopy, white light confocal microscopy (WLCM), grazing incidence X-ray diffraction and Berkovich nanoindentation. The films were crystalline and exhibited remarkable mechanical characteristics with values of hardness and Young modulus of 6-8 and 150-170 GPa, respectively, which are uncommonly high for the CaP ceramics. The UV lamp radiation enhanced the gas reactivity and atoms mobility during processing, while the tensile strength between the film's grains and the bonding strength at the CaP film-substrate interface were increased.

  19. Polymer Thin Films and Surface Modification by Chemical Vapor Deposition: Recent Progress.

    PubMed

    Chen, Nan; Kim, Do Han; Kovacik, Peter; Sojoudi, Hossein; Wang, Minghui; Gleason, Karen K

    2016-06-01

    Chemical vapor deposition (CVD) polymerization uses vapor phase monomeric reactants to synthesize organic thin films directly on substrates. These thin films are desirable as conformal surface engineering materials and functional layers. The facile tunability of the films and their surface properties allow successful integration of CVD thin films into prototypes for applications in surface modification, device fabrication, and protective films. CVD polymers also bridge microfabrication technology with chemical and biological systems. Robust coatings can be achieved via CVD methods as antifouling, anti-icing, and antihydrate surfaces, as well as stimuli-responsive or biocompatible polymers and novel nanostructures. Use of low-energy input, modest vacuum, and room-temperature substrates renders CVD polymerization compatible with thermally sensitive substrates and devices. Compared with solution-based methods, CVD is particularly useful for insoluble materials, such as electrically conductive polymers and controllably crosslinked networks, and has the potential to reduce environmental, health, and safety impacts associated with solvents. This review discusses the relevant background and selected applications of recent advances by two methods that display and use the high retention of the organic functional groups from their respective monomers, initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. PMID:27276550

  20. Ar ions irradiation effects in ZrN thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Socol, G.; Dorcioman, G.; Simeone, D.; Gosset, D.; Behdad, S.; Boesl, B.; Craciun, V.

    2015-05-01

    Thin ZrN films (<500 nm) were grown on (1 0 0)Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under CH4 or N2 atmosphere. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies indicated that the films were very dense and with a smooth surface. The films were used to study the effect of 800 keV Ar ion irradiation on their structure and properties. After irradiation with a dose of 1014 at/cm2 the lattice parameter and crystallites size did marginally change. However, after irradiation with a 1015 at/cm2 dose, a clear increase in the lattice parameter accompanied by a significant decrease in nanohardness and Young modulus were observed.

  1. Black metal thin films by deposition on dielectric antireflective moth-eye nanostructures

    PubMed Central

    Christiansen, Alexander B.; Caringal, Gideon P.; Clausen, Jeppe S.; Grajower, Meir; Taha, Hesham; Levy, Uriel; Asger Mortensen, N.; Kristensen, Anders

    2015-01-01

    Although metals are commonly shiny and highly reflective, we here show that thin metal films appear black when deposited on a dielectric with antireflective moth-eye nanostructures. The nanostructures were tapered and close-packed, with heights in the range 300-600 nm, and a lateral, spatial frequency in the range 5–7 μm−1. A reflectance in the visible spectrum as low as 6%, and an absorbance of 90% was observed for an Al film of 100 nm thickness. Corresponding experiments on a planar film yielded 80% reflectance and 20% absorbance. The observed absorbance enhancement is attributed to a gradient effect causing the metal film to be antireflective, analogous to the mechanism in dielectrics and semiconductors. We find that the investigated nanostructures have too large spatial frequency to facilitate efficient coupling to the otherwise non-radiating surface plasmons. Applications for decoration and displays are discussed. PMID:26035526

  2. Influence of annealing on the optical properties of vacuum deposited silver thin films

    NASA Astrophysics Data System (ADS)

    Gnanadurai, P.; Sivaraja, N.; Soundrarajan, N.; Vijayan, C.

    2015-06-01

    Thin Silver films of thickness 15nm were prepared by thermal evaporation on well cleaned glass substrates at room temperature at a pressure of 2×10-5 mbar with the deposition rate of 0.01À/sec and annealed in air for an hour at temperatures between 300°c and 400°c. The prepared films were characterized by X-ray diffraction (XRD), UV-visible spectroscopy and AFM. The mean grain size of the film at different annealing temperatures was determined by the X-ray diffraction pattern by using Scheer's formula. It is found that from absorbance studies surface Plasmon peak position decreases as the annealing temperature increases and blue shifted. And also from transmittance studies the thermal effect of silver film strongly affects the optical transmittance. From AFM studies the average particle size and RMS surface roughness increase with increase of annealing temperatures.

  3. Influence of annealing on the optical properties of vacuum deposited silver thin films

    SciTech Connect

    Gnanadurai, P. Vijayan, C.; Sivaraja, N.; Soundrarajan, N.

    2015-06-24

    Thin Silver films of thickness 15nm were prepared by thermal evaporation on well cleaned glass substrates at room temperature at a pressure of 2×10{sup −5} mbar with the deposition rate of 0.01À/sec and annealed in air for an hour at temperatures between 300°c and 400°c. The prepared films were characterized by X-ray diffraction (XRD), UV-visible spectroscopy and AFM. The mean grain size of the film at different annealing temperatures was determined by the X-ray diffraction pattern by using Scheer’s formula. It is found that from absorbance studies surface Plasmon peak position decreases as the annealing temperature increases and blue shifted. And also from transmittance studies the thermal effect of silver film strongly affects the optical transmittance. From AFM studies the average particle size and RMS surface roughness increase with increase of annealing temperatures.

  4. Growth inhibition to enhance conformal coverage in thin film chemical vapor deposition.

    PubMed

    Kumar, Navneet; Yanguas-Gil, Angel; Daly, Scott R; Girolami, Gregory S; Abelson, John R

    2008-12-31

    We introduce the use of a growth inhibitor to enhance thin film conformality in low temperature chemical vapor deposition. Films of TiB(2) grown from the single source precursor Ti(BH(4))(3)(dme) are much more highly conformal when grown in the presence of one of the film growth byproducts, 1,2-dimethoxyethane (dme). This effect can be explained in terms of two alternative inhibitory mechanisms: one involving blocking of surface reactive sites, which is equivalent to reducing the rate of the forward reaction leading to film growth, the other analogous to Le Chatelier's principle, in which the addition of a reaction product increases the rate of the back reaction. The reduction in growth rate corresponds to a reduction in the sticking probability of the precursor, which enhances conformality by enabling the precursor to diffuse deeper into a recessed feature before it reacts. PMID:19067582

  5. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Kumar, G. Anil; Reddy, M. V. Ramana; Reddy, Katta Narasimha

    2014-04-01

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10-2 mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  6. Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

    SciTech Connect

    Yang, Qi I.; Zhao, Jinfeng; Risbud, Subhash H.; Zhang, Li; Dolev, Merav; Fried, Alexander D.; Marshall, Ann F.; Kapitulnik, Aharon

    2014-02-24

    High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

  7. Organic and inorganic–organic thin film structures by molecular layer deposition: A review

    PubMed Central

    Sundberg, Pia

    2014-01-01

    Summary The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications. PMID:25161845

  8. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    SciTech Connect

    Yadav, Harish Kumar; Gupta, Vinay

    2012-05-15

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  9. Photocatalytic Functional Coating of TiO2 Thin Film Deposited by Cyclic Plasma Chemical Vapor Deposition at Atmospheric Pressure

    NASA Astrophysics Data System (ADS)

    Kwon, Jung-Dae; Rha, Jong-Joo; Nam, Kee-Seok; Park, Jin-Seong

    2011-08-01

    Photocatalytic TiO2 thin films were prepared with titanium tetraisopropoxide (TTIP) using cyclic plasma chemical vapor deposition (CPCVD) at atmospheric pressure. The CPCVD TiO2 films contain carbon-free impurities up to 100 °C and polycrystalline anatase phases up to 200 °C, due to the radicals and ion-bombardments. The CPCVD TiO2 films have high transparency in the visible wavelength region and absorb wavelengths below 400 nm (>3.2 eV). The photocatalytic effects of the CPCVD TiO2 and commercial sprayed TiO2 films were measured by decomposing methylene blue (MB) solution under UV irradiation. The smooth CPCVD TiO2 films showed a relatively lower photocatalytic efficiency, but superior catalyst-recycling efficiency, due to their high adhesion strength on the substrates. This CPCVD technique may provide the means to produce photocatalytic thin films with low cost and high efficiency, which would be a reasonable candidate for practical photocatalytic applications, because of the reliability and stability of their photocatalytic efficiency in a practical environment.

  10. Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

    PubMed Central

    2012-01-01

    Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se2 solar cells. PMID:22221917

  11. Nanobrick wall multilayer thin films grown faster and stronger using electrophoretic deposition

    NASA Astrophysics Data System (ADS)

    Cho, Chungyeon; Wallace, Kevin L.; Hagen, David A.; Stevens, Bart; Regev, Oren; Grunlan, Jaime C.

    2015-05-01

    In an effort to speed up the layer-by-layer (LbL) deposition technique, electrophoretic deposition (EPD) is employed with weak polyelectrolytes and clay nanoplatelets. The introduction of an electric field results in nearly an order of magnitude increase in thickness relative to conventional LbL deposition for a given number of deposited layers. A higher clay concentration also results with the EPD-LbL process, which produces higher modulus and strength with fewer deposited layers. A 20 quadlayer (QL) assembly of linear polyethyleneimine (LPEI)/poly(acrylic acid)/LPEI/clay has an elastic modulus of 45 GPa, tensile strength of 70 MPa, and thickness of 4.4 μm. Traditional LbL requires 40 QL to achieve the same thickness, with lower modulus and strength. This study reveals how these films grow and maintain a highly ordered nanobrick wall structure that is commonly associated with LbL deposition. Fewer layers required to achieve improved properties will open up many new opportunities for this multifunctional thin film deposition technique.

  12. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    SciTech Connect

    Lo, Fang-Yuh Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Liu, Hsiang-Lin; Chern, Ming-Yau

    2015-06-07

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  13. Simultaneous Optimization of Nanocrystalline SnO2 Thin Film Deposition Using Multiple Linear Regressions

    PubMed Central

    Ebrahimiasl, Saeideh; Zakaria, Azmi

    2014-01-01

    A nanocrystalline SnO2 thin film was synthesized by a chemical bath method. The parameters affecting the energy band gap and surface morphology of the deposited SnO2 thin film were optimized using a semi-empirical method. Four parameters, including deposition time, pH, bath temperature and tin chloride (SnCl2·2H2O) concentration were optimized by a factorial method. The factorial used a Taguchi OA (TOA) design method to estimate certain interactions and obtain the actual responses. Statistical evidences in analysis of variance including high F-value (4,112.2 and 20.27), very low P-value (<0.012 and 0.0478), non-significant lack of fit, the determination coefficient (R2 equal to 0.978 and 0.977) and the adequate precision (170.96 and 12.57) validated the suggested model. The optima of the suggested model were verified in the laboratory and results were quite close to the predicted values, indicating that the model successfully simulated the optimum conditions of SnO2 thin film synthesis. PMID:24509767

  14. High temperature performance of sputter-deposited piezoelectric aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Gillinger, M.; Schneider, M.; Bittner, A.; Nicolay, P.; Schmid, U.

    2015-05-01

    Aluminum nitride (AlN) is a promising material for sensor applications in harsh environments such as turbine exhausts or thermal power plants due to its piezoelectric properties, good thermal match to silicon and high temperature stability. Typically, the usage of piezoelectric materials in high temperature is limited by the Curie-temperature, the increase of the leakage current as well as by enhanced diffusion effects in the materials. In order to exploit the high temperature potential of AlN thin films, post deposition annealing experiments up to 1000°C in both oxygen and nitrogen gas atmospheres for 2 h were performed. X-ray diffraction measurements indicate that the thin films are chemically stable in a pure oxygen atmosphere for 2 h at annealing temperatures of up to 900°C. After a 2 h annealing step at 1000°C in pure oxygen. However, a 100 nm thin AlN film is completely oxidized. In contrast, the layer is stable up to 1000°C in pure nitrogen atmosphere. The surface topology changes significantly at annealing temperatures above 800°C independent of annealing atmosphere. The surface roughness is increased by about one order of magnitude compared to the "as deposited" state. This is predominantly attributed to recrystallization processes occurring during high temperature loading. Up to an annealing temperature of 700°C, a Poole-Frenkel conduction mechanism dominates the leakage current characteristics. Above, a mixture of different leakage current mechanisms is observed.

  15. Nanoparticulate cerium dioxide and cerium dioxide-titanium dioxide composite thin films on glass by aerosol assisted chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma; Dunnill, Charles W.; Parkin, Ivan P.

    2009-11-01

    Two series of composite thin films were deposited on glass by aerosol assisted chemical vapour deposition (AACVD)—nanoparticulate cerium dioxide and nanoparticulate cerium dioxide embedded in a titanium dioxide matrix. The films were analysed by a range of techniques including UV-visible absorption spectroscopy, X-ray diffraction, scanning electron microscopy and energy dispersive analysis by X-rays. The AACVD prepared films showed the functional properties of photocatalysis and super-hydrophilicity. The CeO 2 nanoparticle thin films displaying photocatalysis and photo-induced hydrophilicity almost comparable to that of anatase titania.

  16. Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

    SciTech Connect

    Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

    2005-05-16

    A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

  17. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1998-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  18. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1999-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  19. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  20. Deposition of binary, ternary and quaternary metal selenide thin films from diisopropyldiselenophosphinato-metal precursors

    NASA Astrophysics Data System (ADS)

    Mahboob, Sumera; Malik, Sajid N.; Haider, Nazre; Nguyen, C. Q.; Malik, Mohammad A.; O'Brien, Paul

    2014-05-01

    The tetragonal chalcopyrite phases CuInSe2, CuGaSe2 and CuIn0.7Ga0.3Se2 have been deposited onto the glass substates by Aerosol Assisted Chemical Vapour Deposition (AACVD) from a mixture of [Mx(iPr2PSe2)y] complexes (M=In, Ga, Cu) at temperatures between 300 °C and 500 °C. The thin films were characterized by powder X-ray diffraction (p-XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The bulk compositional properties have been studied by energy dispersive X-ray (EDX) analysis. SEM and AFM studies demonstrate a significant variation in morphology of the deposited materials at different deposition temperatures.

  1. Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films.

    PubMed

    Mirvakili, Mehr Negar; Van Bui, Hao; van Ommen, J Ruud; Hatzikiriakos, Savvas G; Englezos, Peter

    2016-06-01

    Surface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, whereas on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability.

  2. Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films.

    PubMed

    Mirvakili, Mehr Negar; Van Bui, Hao; van Ommen, J Ruud; Hatzikiriakos, Savvas G; Englezos, Peter

    2016-06-01

    Surface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties. Thus, a hydrophobic paper is created with low gas permeability by combining the control of fiber size (and structure) with atomic layer deposition of Al2O3 films. Papers are prepared using Kraft softwood pulp and thermomechanical pulp. The cellulosic wood fibers are refined to obtain fibers with smaller length and diameter. Films of Al2O3, 10, 25, and 45 nm in thickness, are deposited on the paper surface. The work demonstrates that coating of papers prepared with long fibers efficiently reduces wettability with slight enhancement in gas permeability, whereas on shorter fibers, it results in significantly lower gas permeability. Wettability studies on Al2O3 deposited paper substrates have shown water wicking and absorption over time only in papers prepared with highly refined fibers. It is also shown that there is a certain fiber size at which the gas permeability assumes its minimum value, and further decrease in fiber size will reverse the effect on gas permeability. PMID:27165172

  3. Effects of complexing agents on electrochemical deposition of FeS x O y thin films

    NASA Astrophysics Data System (ADS)

    Supee, Aizuddin; Ichimura, Masaya

    2016-08-01

    FeS x O y thin films were deposited on indium-tin-oxide (ITO)-coated glass substrates at 15 °C via galvanostatic electrochemical deposition from an aqueous solution containing 100 mM Na2S2O3 and 30 mM FeSO4. The effects of l(+)-tartaric acid (C4H4O6) and lactic acid [CH3CH(OH)COOH] at different concentrations were investigated. All the deposited films were amorphous. With the complexing agents, the thickness was increased, and the oxygen content was reduced significantly compared with the sample deposited without the complexing agents. In the photoelectrochemical measurement, p-type conductivity was confirmed. The photoresponsivity was not influenced significantly by the complexing agent, suggesting that the oxygen content does not drastically affect the properties of the deposited films probably because the local bonding configuration around Fe atoms in FeS x O y is similar to that in FeS2.

  4. Effects of complexing agents on electrochemical deposition of FeS x O y thin films

    NASA Astrophysics Data System (ADS)

    Supee, Aizuddin; Ichimura, Masaya

    2016-08-01

    FeS x O y thin films were deposited on indium–tin-oxide (ITO)-coated glass substrates at 15 °C via galvanostatic electrochemical deposition from an aqueous solution containing 100 mM Na2S2O3 and 30 mM FeSO4. The effects of l(+)-tartaric acid (C4H4O6) and lactic acid [CH3CH(OH)COOH] at different concentrations were investigated. All the deposited films were amorphous. With the complexing agents, the thickness was increased, and the oxygen content was reduced significantly compared with the sample deposited without the complexing agents. In the photoelectrochemical measurement, p-type conductivity was confirmed. The photoresponsivity was not influenced significantly by the complexing agent, suggesting that the oxygen content does not drastically affect the properties of the deposited films probably because the local bonding configuration around Fe atoms in FeS x O y is similar to that in FeS2.

  5. Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Zhang, Bo; Xu, Yan-Hui; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-12-01

    TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings. Thin film coatings of palladium, which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H2 pumping speed, were deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd films were about 0.42-1.3 nm and 8.5-18.25 nm respectively. It was found that the roughness of TiZrV films is small, about 2-4 nm, but for Pd film it is large, about 17-19 nm. The PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results. Supported by National Natural Science Funds of China (11205155) and Fundamental Research Funds for the Central Universities (WK2310000041)

  6. Deposition of Highly Luminescent Zinc Tungstate Thin Films on Various Substrates

    NASA Astrophysics Data System (ADS)

    Farrakhan, Rashad

    Zinc tungstate films have promising applications in small form factor backscatter electron detectors. We are developing a multistep technology for synthesis of these films. Zinc and tungsten were co-sputtered onto substrates through the process of magnetron sputtering. The metallic films were oxidized in a vacuum sealed tube furnace in controlled flow of argon and oxygen at 800 °C. The chemical composition of the film was characterized by Energy-Dispersive X-Ray Spectroscopy (EDS). The structure of the film was investigated by Raman Spectroscopy. The photoluminescence quantum efficiency of the films was found to be 60%. Process parameters for obtaining the desired 1-1 ratio of zinc to tungsten in the film is explored through varying factors such as: the composition of the target used in the sputtering, the power and or voltage used in the sputtering process. Our experiments show that zinc tungstate thin films can be deposited on various substrates with good adhesion and mechanical integrity, and still be efficient light emitters.

  7. Deodorisation effect of diamond-like carbon/titanium dioxide multilayer thin films deposited onto polypropylene

    NASA Astrophysics Data System (ADS)

    Ozeki, K.; Hirakuri, K. K.; Masuzawa, T.

    2011-04-01

    Many types of plastic containers have been used for the storage of food. In the present study, diamond-like carbon (DLC)/titanium oxide (TiO2) multilayer thin films were deposited on polypropylene (PP) to prevent flavour retention and to remove flavour in plastic containers. For the flavour removal test, two types of multilayer films were prepared, DLC/TiO2 films and DLC/TiO2/DLC films. The residual gas concentration of acetaldehyde, ethylene, and turmeric compounds in bottle including the DLC/TiO2-coated and the DLC/TiO2/DLC-coated PP plates were measured after UV radiation, and the amount of adsorbed compounds to the plates was determined. The percentages of residual gas for acetaldehyde, ethylene, and turmeric with the DLC/TiO2 coated plates were 0.8%, 65.2% and 75.0% after 40 h of UV radiation, respectively. For the DLC/TiO2/DLC film, the percentages of residual gas for acetaldehyde, ethylene and turmeric decreased to 34.9%, 76.0% and 85.3% after 40 h of UV radiation, respectively. The DLC/TiO2/DLC film had a photocatalytic effect even though the TiO2 film was covered with the DLC film.

  8. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  9. Electrochemically deposited nanostructured ZnO thin films for biosensor applications

    NASA Astrophysics Data System (ADS)

    Bhadane, Hemalata; Samuel, Edmund; Gautam, D. K.

    2014-04-01

    Zinc Oxide thin films have been deposited by electrochemical method on stainless steel using Zinc nitrate hexahydrate as precursor and 0.05 M potassium chloride (KCl) as supporting electrolyte. The paper reveals thorough investigation of effect of concentration of Zinc nitrate. Further, morphological, structural and optical analysis has been carried out using the FESEM, XRD and PL spectroscopy respectively. From FESEM hexagonal shape nanorods ZnO films fabricated for 1 hour using 0.05M and 0.1M concentration are clearly observed. The XRD of ZnO thin films shows strong peaks along c-axis with (0 0 2) orientation of ZnO nanorods which implies deposited nanorods are perpendicular to the substrate surface and wurtzite hexagonal phase. The hexagonal ZnO nanorod grown using a 0.05M zinc nitrate concentration exhibited the sharpest and most intense PL peak in at 382 nm near UV band edge, indicates the enhanced crystalline structure of ZnO film.

  10. Characterization of thin-film deposition in a pulsed acrylic acid polymerizing discharge

    SciTech Connect

    Voronin, Sergey A.; Bradley, James W.; Fotea, Catalin; Zelzer, Mischa; Alexander, Morgan R.

    2007-07-15

    In this study, thin-film deposition in a pulsed rf polymerizing discharge (13.56 MHz) struck in acrylic acid has been investigated by mass spectrometry, x-ray photoelectron spectroscopy, and quartz crystal microbalance techniques. The experiment was conducted at a fixed acrylic acid pressure of 1.3 Pa and 'on' pulse duration of 0.1 ms, whereas the 'off' time was varied between 0 and 20 ms. The rf input power in the 'on' time and gas flow rate were varied between 10 and 50 W and 1.5 and 4.8 sccm (sccm denotes cubic centimeter per minute at STP), respectively. These changes of the discharge conditions resulted in large-scale progressive variations in film and gas-phase plasma composition. In particular, the -COOH functionality of the monomer was increasingly retained in the plasma-generated thin films as the duty cycle was lowered (i.e., with lowered time-averaged powers). The monomer retention reached its maximum value of 66% for 'off' times exceeding 5 ms, when the discharge was operating in the power-deficient regime. The results show that the film deposition rate is a strong function of the monomer flow rate, whereas -COOH retention is correlated to the amount of unfragmented monomer in the plasma, controlled by the applied power.

  11. Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Buršík, J.; Kužel, R.; Knížek, K.; Drbohlav, I.

    2013-07-01

    Thin films of Ba2Zn2Fe12O22 (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(1 1 1) (ST) single crystal substrates using epitaxial SrFe12O19 (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO3 substrate and both hexaferrite phases.

  12. Influence of deposition parameters on residual stress of YbF3 thin film

    NASA Astrophysics Data System (ADS)

    Zhang, Yao-ping; Fan, Jun-qi; Long, Guo-yun

    2016-01-01

    YbF3 was proposed as a substitute for ThF4 in anti-reflection or reflection coatings for the infrared range, and the residual stress of YbF3 thin film using APS plasma ion assisted deposition(PIAD) was studied. From the results, we found the anode voltage of PIAD has a large effect on the residual stress of YbF3 thin film, and the refractive index of YbF3 produced with PIAD was higher than without it, with a possible reason close to packing density. Finally, we produced multi-layer reflection coating on a 260mm diameter mono-crystalline silicon substrate. Its surface contour was approximately 0.240λ (λ=632.8nm), and the absorption was lower than 200ppm, which can satisfy the practical requirement.

  13. Growth Assisted by Glancing Angle Deposition: A New Technique to Fabricate Highly Porous Anisotropic Thin Films.

    PubMed

    Sanchez-Valencia, Juan Ramon; Longtin, Remi; Rossell, Marta D; Gröning, Pierangelo

    2016-04-01

    We report a new methodology based on glancing angle deposition (GLAD) of an organic molecule in combination with perpendicular growth of a second inorganic material. The resulting thin films retain a very well-defined tilted columnar microstructure characteristic of GLAD with the inorganic material embedded inside the columns. We refer to this new methodology as growth assisted by glancing angle deposition or GAGLAD, since the material of interest (here, the inorganic) grows in the form of tilted columns, though it is deposited under a nonglancing configuration. As a "proof of concept", we have used silver and zinc oxide as the perpendicularly deposited material since they usually form ill-defined columnar microstructures at room temperature by GLAD. By means of our GAGLAD methodology, the typical tilted columnar microstructure can be developed for materials that otherwise do not form ordered structures under conventional GLAD. This simple methodology broadens significantly the range of materials where control of the microstructure can be achieved by tuning the geometrical deposition parameters. The two examples presented here, Ag/Alq3 and ZnO/Alq3, have been deposited by physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), respectively: two different vacuum techniques that illustrate the generality of the proposed technique. The two type of hybrid samples present very interesting properties that demonstrate the potentiality of GAGLAD. On one hand, the Ag/Alq3 samples present highly optical anisotropic properties when they are analyzed with linearly polarized light. To our knowledge, these Ag/Alq3 samples present the highest angular selectivity reported in the visible range. On the other hand, ZnO/Alq3 samples are used to develop highly porous ZnO thin films by using Alq3 as sacrificial material. In this way, antireflective ZnO samples with very low refractive index and extinction coefficient have been obtained. PMID:26954074

  14. Growth Assisted by Glancing Angle Deposition: A New Technique to Fabricate Highly Porous Anisotropic Thin Films.

    PubMed

    Sanchez-Valencia, Juan Ramon; Longtin, Remi; Rossell, Marta D; Gröning, Pierangelo

    2016-04-01

    We report a new methodology based on glancing angle deposition (GLAD) of an organic molecule in combination with perpendicular growth of a second inorganic material. The resulting thin films retain a very well-defined tilted columnar microstructure characteristic of GLAD with the inorganic material embedded inside the columns. We refer to this new methodology as growth assisted by glancing angle deposition or GAGLAD, since the material of interest (here, the inorganic) grows in the form of tilted columns, though it is deposited under a nonglancing configuration. As a "proof of concept", we have used silver and zinc oxide as the perpendicularly deposited material since they usually form ill-defined columnar microstructures at room temperature by GLAD. By means of our GAGLAD methodology, the typical tilted columnar microstructure can be developed for materials that otherwise do not form ordered structures under conventional GLAD. This simple methodology broadens significantly the range of materials where control of the microstructure can be achieved by tuning the geometrical deposition parameters. The two examples presented here, Ag/Alq3 and ZnO/Alq3, have been deposited by physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), respectively: two different vacuum techniques that illustrate the generality of the proposed technique. The two type of hybrid samples present very interesting properties that demonstrate the potentiality of GAGLAD. On one hand, the Ag/Alq3 samples present highly optical anisotropic properties when they are analyzed with linearly polarized light. To our knowledge, these Ag/Alq3 samples present the highest angular selectivity reported in the visible range. On the other hand, ZnO/Alq3 samples are used to develop highly porous ZnO thin films by using Alq3 as sacrificial material. In this way, antireflective ZnO samples with very low refractive index and extinction coefficient have been obtained.

  15. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  16. Deposition of YBCO thin films on silver substrate via a fluorine-free sol-gel synthesis

    NASA Astrophysics Data System (ADS)

    Xu, Yongli; Shi, Donglu; Lian, L.; Wang, M.; McClellan, Shaun M.

    2002-05-01

    To further develop grain-textured YBCO thin films for conductor development, we deposited, via a fluorine-free sol-gel synthesis, YBCO thin films on non-textured silver substrate. The interface structures were studied by both x-ray diffraction (XRD) and transmission electron microscopy (HRTEM). XRD data indicated that the YBCO films on silver substrate exhibited c-axis grain orientations. Experimental details are reported on the sol-gel synthesis chemistry and XRD and HRTEM characterization of the YBCO thin films.

  17. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    NASA Astrophysics Data System (ADS)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  18. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    NASA Astrophysics Data System (ADS)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  19. Investigation of the nonlocal nonlinear optical response of copper nanostructured thin films prepared by pulsed laser deposition

    SciTech Connect

    Farmanfarmaei, B; RashidianVaziri, M R; Hajiesmaeilbaigi, F

    2014-11-30

    Nanostructured copper thin films have been prepared using the pulsed laser deposition method. Optical absorption spectra of these films exhibit plasmonic absorption peaks around 619 nm, which suggests the formation of copper nanoparticles on their surfaces. Scanning electron micrographs of the films confirm the nanoparticle formation on the films surfaces. After laser beam passing through the thin films, the observed diffraction rings on a far-field screen have been recorded. Despite the smallness of the maximal axial phase shifts of the films, which have been obtained using the nonlocal z-scan theory, a series of low-intensity rings can be observed on the far field screen for some specific positions of the thin films from the focal point. It is shown that the best approach to determining the sign and magnitude of the nonlinear refractive index of thin samples is the application of the conventional closeaperture z-scan method. (nanostructures)

  20. Manifestation of unusual size effects in granular thin films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sergeenkov, S.; Cichetto, L.; Diaz, J. C. C. A.; Bastos, W. B.; Longo, E.; Araújo-Moreira, F. M.

    2016-11-01

    We demonstrate manifestation of some rather unusual size effects in granular thin films prepared by a pulsed laser deposition technique. We observed that the temperature dependence of resistivity ρ(T) notably depends on the relation between the grain size Rg and the film thickness d. Namely, more granular LaNiO3 thin films (with small values of Rg) grown on LaAlO3 substrate are found to follow a universal ρ(T) ∝T 3 / 2 law for all the measured temperatures. While less granular thin films (with larger values of Rg), exhibit a more complicated behavior accompanied by a clear-cut crossover (around Tcr = 200 K), from ρ(T) ∝T 3 / 2 (for 20 K < T < 200 K) to ρ(T) ∝ T (for 200 K < T < 300 K). The obtained results are attributed to manifestation of the finite temperature size effects (when an average grain size Rg becomes comparable with the thermal de Broglie wavelength Λ) leading to the crossover temperature Tcr ∝(d /Rg) 2 .

  1. Optical tuning of electrical properties of PZT thin film deposited on STO

    NASA Astrophysics Data System (ADS)

    Gupta, Reema; Tomar, Monika; Gupta, Vinay

    2015-11-01

    Present report deals with the optical tuning of electrical properties of PZT thin film based photodetector (PD). Lead Zirconium Titanate (PZT) thin film has been fabricated over epitaxially matched Strontium Titanate (STO) substrate using Pulsed Laser Deposition technique. Fine aluminium inter digital electrodes were patterned over PZT film to study the response of the PD. The photo response has been investigated by tuning the optical properties of the incident laser beam. The response was found to be modified according to the incident laser intensity and the distance between sample and laser. Moreover, PZT based photo detector was found to be highly sensitive towards small variation in the optical properties of the incident light. The intrinsic properties of the PZT thin film including its ferroelectric properties make it a novel material for the fabrication of UV based photo detector. The response of the PZT based Photodetector was found to be about 152 at a distance of 10cm between the PD and the UV laser of wavelength 365nm. The response time and recovery time were found to be 60 msec each which are much faster for UV detection as compared to other photodetectors. Moreover, a stable response was also observed on the repetitive UV sensing for the fabricated PZT based Photodetector.

  2. Cell adhesion on NiTi thin film sputter-deposited meshes.

    PubMed

    Loger, K; Engel, A; Haupt, J; Li, Q; Lima de Miranda, R; Quandt, E; Lutter, G; Selhuber-Unkel, C

    2016-02-01

    Scaffolds for tissue engineering enable the possibility to fabricate and form biomedical implants in vitro, which fulfill special functionality in vivo. In this study, free-standing Nickel–Titanium(NiTi) thin film mesheswere produced by means of magnetron sputter deposition.Meshes contained precisely defined rhombic holes in the size of 440 to 1309 μm2 and a strut width ranging from 5.3 to 9.2 μm. The effective mechanical properties of the microstructured superelastic NiTi thin film were examined by tensile testing. These results will be adapted for the design of the holes in the film. The influence of hole and strut dimensions on the adhesion of sheep autologous cells (CD133+) was studied after 24 h and after seven days of incubation. Optical analysis using fluorescence microscopy and scanning electron microscopy showed that cell adhesion depends on the structural parameters of the mesh. After 7 days in cell culture a large part of the mesh was covered with aligned fibrous material. Cell adhesion is particularly facilitated on meshes with small rhombic holes of 440 μm2 and a strut width of 5.3 μm. Our results demonstrate that free-standing NiTi thin film meshes have a promising potential for applicationsin cardiovascular tissue engineering, particularly for the fabrication of heart valves. PMID:26652414

  3. Deposition of Pd–Ag thin film membranes on ceramic supports for hydrogen purification/separation

    SciTech Connect

    Pereira, A.I.; Pérez, P.; Rodrigues, S.C.; Mendes, A.; Madeira, L.M.

    2015-01-15

    Highlights: • Thin film Pd–Ag membranes have been produced for hydrogen selectivity. • Magnetron sputtering yields Pd–Ag compact films for atomic H diffusion. • The thin film Pd–Ag membranes yielded a selectivity of α (H{sub 2}/N{sub 2}) = 10. - Abstract: Pd–Ag based membranes supported on porous α-Al{sub 2}O{sub 3} (doped with yttria-stabilized zirconia) were studied for hydrogen selective separation. Magnetron sputtering technique was employed for the synthesis of thin film membranes. The hydrogen permeation flux is affected by the membrane columnar structure, which is formed during deposition. From scanning electron microscopy analysis, it was observed that different sputtering deposition pressures lead to distinct columnar structure growth. X-ray diffraction patterns provided evidence of a Pd–Ag solid solution with an average crystallite domain size of 21 nm, whose preferential growth can be altered by the deposition pressure. The gas-permeation results have shown that the Pd–Ag membrane supported on porous α-Al{sub 2}O{sub 3} is selective toward H{sub 2}. For optimized membrane synthesis conditions, the permeance toward N{sub 2} is 0.076 × 10{sup −6} mol m{sup −2} s{sup −1} Pa{sup −1} at room temperature, whereas for a pressure difference of 300 kPa the H{sub 2}-flux is of the order of ca. 0.21 mol m{sup −2} s{sup −1}, which corresponds to a permeance of 0.71 × 10{sup −6} mol m{sup −2} s{sup −1} Pa{sup −1}, yielding a selectivity of α (H{sub 2}/N{sub 2}) = 10. These findings suggest that the membrane has a reasonable capacity to selectively permeate this gas.

  4. Nonstoichiometric composition shift in physical vapor deposition of CdTe thin films

    NASA Astrophysics Data System (ADS)

    Chin, Ken K.; Cheng, Zimeng; Delahoy, Alan E.

    2015-05-01

    While it is being debated whether Cd vacancy is an effective p-dopant in CdTe, and whether CdTe thin film in solar energy application should be Cd-deficient or Cd-rich, in the theory of CdTe physical vapor deposition (PVD) it has been assumed that both the source material and the thin film product is stoichiometric. To remediate the lack of effective theory, a new PVD model for CdTe photovoltaic (PV) modules is presented in this work, in which the composition of the CdTe thin film under growth is a parameter determined by the source CdTe composition as well as the growth condition. The solid phase Cd1-δTe1+δ compound under deposition temperature is treated as a solid solution with a mole of excess pure Te or Cd as solute and one mole of congruently grown CdTe as solvent. Assuming that the vapor pressure of Te2 can be calculated by using the law of solid solution PTe=H0+aH1+a2H2 round the congruent composition, where the molar number a and the constants H0, H1 and H2 as functions of temperature T are extracted from the experimental data. Thus, the mole fraction of solute in the grown CdTe thin film as well as the growth rate, as a function of the solute mole fraction in the source CdTe can be determined.

  5. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    NASA Astrophysics Data System (ADS)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m-3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  6. DC magnetron deposition and characterization of iron-platinum magnetic thin films

    NASA Astrophysics Data System (ADS)

    Pei Ling, Low

    Iron-platinum (FePt) thin films have been widely investigated because of their potential for ultrahigh density magnetic storage. In this research, FePt thin films have been fabricated and characterized to investigate the substrate effects on the structural properties and surface morphologies of the FePt films, and also the thickness effects on the structural and magnetic properties of the films. For the substrate effects, 77nm-thick FePt films were prepared by DC magnetron sputtering at room temperature using three kinds of substrates: Corning1737 glass, normal glass, and Si wafer. The as-deposited FePt films are disordered face-centered-cubic (fcc) A1 in structure, in which heat treatments at elevated temperature are necessary to phase transform the films into the ordered fct L10 structure. These were subsequently post-annealed in furnace at 450, 600, and 650°C, for 1 hour. The x-ray diffractometer (XRD) results showed that the FePt samples have ordered L10 FePt phases. The surface morphologies measured by an atomic force microscope (AFM) showed changes from continuous maze-like patterns to discontinuous granular structures. The grain sizes and surface roughness of the FePt films increased with the post-annealing temperature. However, the FePt film on Si substrate displayed morphology of partially separated granular grains. For thickness effects, FePt films of three different thicknesses: 17, 50, and 77nm, were respectively sputter-deposited onto normal glass substrates, and subsequently annealed at 450°C for 1 hour. The structural and magnetic properties were characterized by XRD and vibrating sample magnetometer (VSM), respectively. It showed the existence of early-stage ordering (ESO) in A1 fcc phases prior the L10 phase formation, in which the films with higher thickness (77nm) showed an improvement in crystallization and slightly enhanced coercivity. The latter result suggests that in the thicker films, the ordering process could be accelerated at lower

  7. Studies on spin coated PANI/PMMA composite thin film: Effect of post-deposition heating

    NASA Astrophysics Data System (ADS)

    Yadav, J. B.; Patil, R. B.; Puri, R. K.; Puri, Vijaya

    2008-12-01

    Adhesion, structural and optical properties of spin coated PANI/PMMA composite thin films of different composition on glass substrate are reported. The effect of post-deposition heating for 100 °C, 125 °C and 150 °C is also reported. The adhesion of the film was found to increase from 712 ± 5 × 104 N/m 2 to 1602 ± 3 × 10 4 N/m 2 and refractive index decreased from 1.852 ± 0.005 to 1.650 ± 0.004 with increase in concentration of PMMA. Due to post-deposition heating adhesion, optical band gap increased but refractive index decreased.

  8. Bismuth oxide thin films prepared by chemical bath deposition (CBD) method: annealing effect

    NASA Astrophysics Data System (ADS)

    Gujar, T. P.; Shinde, V. R.; Lokhande, C. D.; Mane, R. S.; Han, Sung-Hwan

    2005-08-01

    Bismuth oxide thin films have been deposited by room temperature chemical bath deposition (CBD) method and annealed at 623 K in air. They were characterized for structural, surface morphological, optical and electrical properties. From the X-ray diffraction patterns, it was found that after annealing a non-stoichiometric phase, Bi 2O 2.33, was removed and phase pure monoclinic Bi 2O 3 was obtained. Surface morphology of Bi 2O 3 film at lower magnification SEM showed rod-like structure, however, higher magnification showed a rectangular slice-like structure perpendicular to substrate, giving rise to microrods on the surface. The optical studies showed the decrease in band gap by 0.3 eV after annealing. The electrical resistivity variation showed semiconductor behavior and from thermoemf measurements, the electrical conductivity was found to be of n-type.

  9. Physical vapor deposition synthesis of tungsten monocarbide (WC) thin films on different carbon substrates

    SciTech Connect

    Weigert, E. C.; Humbert, M. P.; Mellinger, Z. J.; Ren, Q.; Beebe, T. P. Jr.; Bao, L.; Chen, J. G.

    2008-01-15

    The synthesis of tungsten monocarbide (WC) thin films has been performed by physical vapor deposition on various substrates including glassy carbon, carbon fiber sheet, carbon foam, and carbon cloth. The WC and W{sub 2}C phase contents of these films have been evaluated with bulk and surface analysis techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, and scanning electron microscopy. These characterization techniques were also used to determine the effects of synthesis by nonreactive and reactive sputtering. The synthesis of WC particles supported on the carbon fiber substrate has also been accomplished using the temperature programmed reaction method. Overall, the results demonstrate that the phase purity of tungsten carbides can be controlled by the deposition environment and annealing temperatures.

  10. Nanoporosity induced by ion implantation in deposited amorphous Ge thin films

    SciTech Connect

    Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G.; Bosco, L.

    2012-06-01

    The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

  11. Time Invariant Surface Roughness Evolution during Atmospheric Pressure Thin Film Depositions

    PubMed Central

    Merkh, Thomas; Spivey, Robert; Lu, Toh Ming

    2016-01-01

    The evolution of thin film morphology during atmospheric pressure deposition has been studied utilizing Monte Carlo methods. Time invariant root-mean-squared roughness and local roughness morphology were both observed when employing a novel simulation parameter, modeling the effect of the experimental high pressure condition. This growth regime, where the surface roughness remains invariant after reaching a critical value, has not been classified by any existing universality class. An anti-shadowing growth mechanism responsible for this regime occurs when particles undergo binary collisions beneath the surface apexes. Hence, this mechanism is applicable when the mean free path of the depositing species is comparable to the amplitude of the surface features. Computationally this has been modeled by allowing particles to change direction at a specified height above the local film surface. This modification of the incoming flux trajectory consequently has a dramatic smoothening effect, and the resulting surfaces appear in agreement with recent experimental observations. PMID:26814165

  12. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    SciTech Connect

    Iriarte, G. F.

    2010-03-15

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  13. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  14. Nanoindentation study of niobium nitride thin films on niobium fabricated by reactive pulsed laser deposition

    SciTech Connect

    Mamun, Md Abdullah Al; Farha, Ashraf Hassan; Ufuktepe, Yüksel; Elsayed-Ali, Hani E.; Elmustafa, Abdelmageed A.

    2015-03-01

    Nanomechanical and structural properties of NbNx films deposited on single crystal Nb using pulsed laser deposition for different substrate temperature were previously investigated as a function of film/substrate crystal structure (Mamun et al. (2012) [30]). In this study we focus on the effect of laser fluences and background nitrogen pressure on the nanomechanical and structural properties of NbNx films. The crystal structure and surface morphology of the thin films were tested by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Using nanoindentation, the investigation of the nanomechanical properties revealed that the hardness of the NbNx films was directly influenced by the laser fluence for low background nitrogen pressure, whereas the nanomechanical hardness showed no apparent correlation with laser fluence at high background nitrogen pressure. The NbNx film hardness measured at 30% film thickness increased from 14.0 ± 1.3 to 18.9 ± 2.4 GPa when the laser fluence was increased from 15 to 25 J/cm2 at 10.7 Pa N2 pressure. X-ray diffraction showed NbNx films with peaks that correspond to δ-NbN cubic and β-Nb2N hexagonal phases in addition to the δ'-NbN hexagonal phase. Finally, increasing the laser fluence resulted in NbNx films with larger grain sizes.

  15. Role of geometric parameters in electrical measurements of insulating thin films deposited on a conductive substrate

    NASA Astrophysics Data System (ADS)

    Kumar, S.; Gerhardt, R. A.

    2012-03-01

    The effects of film thickness, electrode size and substrate thickness on the impedance parameters of alternating frequency dielectric measurements of insulating thin films deposited on conductive substrates were studied through parametric finite-element simulations. The quasi-static forms of Maxwell's electromagnetic equations in a time harmonic mode were solved using COMSOL Multiphysics® for several types of 2D models (linear and axisymmetric). The full 2D model deals with a configuration in which the impedance is measured between two surface electrodes on top of a film deposited on a conductive substrate. For the simplified 2D models, the conductive substrate is ignored and the two electrodes are placed on the top and bottom of the film. By comparing the full model and the simplified models, approximations and generalizations are deduced. For highly insulating films, such as the case of insulating SiO2 films on a conducting Si substrate, even the simplified models predict accurate capacitance values at all frequencies. However, the edge effects on the capacitance are found to be significant when the film thickness increases and/or the top electrode contact size decreases. The thickness of the substrate affects predominantly the resistive components of the dielectric response while having no significant effect on the capacitive components. Changing the electrode contact size or the film thickness determines the specific values of the measured resistance or capacitance while the material time constant remains the same, and thus this affects the frequency dependence that is able to be detected. This work highlights the importance of keeping in mind the film thickness and electrode contact size for the correct interpretation of the measured dielectric properties of micro/nanoscale structures that are often investigated using nanoscale capacitance measurements.

  16. Design, Construction and Operation of a Chemical Vapor Deposition System for the Growth of Metal Oxide Thin Films.

    NASA Astrophysics Data System (ADS)

    Bumgarner, John Wesley

    1995-01-01

    A unique low pressure, organometallic chemical vapor deposition system has been designed and constructed for the growth of polycrystalline metal oxide thin films. Control of system variables and in situ monitoring of the process via laser reflectance interferometry and Fourier-transform infrared spectroscopy allowed reproducible production of thin films and provided the capability for closed loop control of the deposition process. The films deposited onto Si(100) and Si(111) substrates included titanium dioxide, a representative next generation sensor material; alumina, a common ceramic surface useful in containment; and iron oxide, a potential next generation catalyst surface. Film growth was monitored in situ using LRI, and the films were subsequently analyzed using SEM, EDS, FTIR, Raman, XPS, Auger, SIMS, XRD and ellipsometry. Stoichiometric polycrystalline films of TiO _2 were deposited from TTIP precursor without the addition of O_2 onto Si(100) and Si(111) substrates. Deposition occurred readily at temperatures above 400^circC. The film growth rate increased with temperature to a maximum of 36 nm/min. at 550^circC, and then decreased again at higher temperatures. The overall C content of the films was <10 ^{18} cm^{ -3}. The phase of TiO_2 deposited was found to be anatase or, in a few cases, a mixture of anatase with a lesser proportion of rutile, in agreement with literature reports. Thin films of rm Al_2O_3 were deposited onto Si(100) substrates using ATIP as the precursor and without the addition of oxygen. Bubbler temperatures of at least 140^circ C were required to provide sufficient vapor for film deposition. Depending on the deposition temperature used, the amorphous films produced appeared smooth or granular. Polycrystalline iron oxide thin films were deposited using Fe(CO)_5 + O_2 onto Si(100) and Si(111) substrates. Film quality depended heavily on deposition temperature. Depositions at 350^circC and above were of poor quality, sooty in appearance

  17. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  18. Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mesoraca, S.; Kleibeuker, J. E.; Prasad, B.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-11-01

    We report surface chemical cation composition analysis of high quality superconducting LiTi2O4 thin films, grown epitaxially on MgAl2O4 (111) substrates by pulsed laser deposition. The superconducting transition temperature of the films was 13.8 K. Surface chemical composition is crucial for the formation of a good metal/insulator interface for integrating LiTi2O4 into full-oxide spin-filtering devices in order to minimize the formation of structural defects and increase the spin polarisation efficiency. In consideration of this, we report a detailed angle resolved x-ray photoelectron spectroscopy analysis. Results show Li segregation at the surface of LiTi2O4 films. We attribute this process due to outdiffusion of Li toward the outermost LiTi2O4 layers.

  19. Unambiguous magnetoelastic effect on residual anisotropy in thin films deposited on flexible substrates

    NASA Astrophysics Data System (ADS)

    Gueye, Mouhamadou; Lupo, Pierpaolo; Zighem, Fatih; Faurie, Damien; Belmeguenai, Mohamed; Olusola Adeyeye, Adekunle

    2016-04-01

    The residual magnetic uniaxial anisotropy of thin films deposited on flexible substrates was studied to elucidate its main origins. For that purpose, we sputtered 20 nm thick films of Co40Fe40B20 and Ni80Fe20 on Kapton® substrates. After measuring magnetomechanical properties of each system, we have shown that the weak residual anisotropy in the Ni80Fe20 film, compared to that of Co40Fe40B20, is perfectly correlated to its low magnetostriction coefficient. As a consequence, we conclude that this residual anisotropy is undoubtedly due to the unavoidable bending of the system, even if it is invisible with the naked eye (radius of several centimeters).

  20. Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors.

    PubMed

    Illiberi, A; Cobb, B; Sharma, A; Grehl, T; Brongersma, H; Roozeboom, F; Gelinck, G; Poodt, P

    2015-02-18

    We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition of InGaZnO has been controlled by varying the TMIn or TEGa flow to the reactor, for a given DEZ flow and exposure time. The morphology of the films changes from polycrystalline, for ZnO and In-doped ZnO, to amorphous for In-rich IZO and InGaZnO. The use of these films as the active channel in TFTs has been demonstrated and the influence of In and Ga cations on the electrical characteristics of the TFTs has been studied.

  1. Pulsed laser deposition an alternative route to the growth of magnetic thin films

    NASA Astrophysics Data System (ADS)

    Jenner, A. G.; Hayes, J. P.; Stone, L. A.; Snelling, H. V.; Greenough, R. D.

    1999-01-01

    A variety of magnetic materials that have potential for sensor and microactuator applications have been grown by pulsed laser deposition (PLD). Studies have been carried out to assess the influence of parameters such as the incident laser fluence (J cm -2) on the magnetic and magnetoelastic responses of these films. Magnetic characterisation and magnetostriction measurements were made by vibrating sample magnetometry (VSM) and capacitance dilatometry respectively. No obvious trend was shown, in all the magnetic systems studied, between fluence and magnetic properties such as magnetisation or coercivity. Room temperature in-plane magnetostrictions of ˜800 ppm have been measured from thin films (˜200 nm) of the rare earth intermetallic compound Terfenol-D (Tb 0.3Dy 0.7Fe 1.95). The potential of post production laser processing has been evaluated on the Fe-Zr alloy system and the results point to the ability to tailor the magnetic response of a film for a specific application.

  2. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching

    NASA Astrophysics Data System (ADS)

    Ghazaryan, Lilit; Kley, E.-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2016-06-01

    A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures.

  3. Extremely high rate deposition of polymer multilayer optical thin film materials

    SciTech Connect

    Affinito, J.D.

    1993-03-01

    This paper highlights a new technique for extremely high rate deposition of optical dielectric films (vacuum deposition of polymer multilayer thin films). This is a way to produce multilayer optical filters comprised of thousands of layers of either linear or nonlinear optical materials. The technique involves the flash evaporation of an acrylic monomer onto a moving substrate; the monomer is then cured. Acrylic polymers deposited to date are very clear for wavelengths between 0.35 and 2.5 {mu}m; they have extinction coefficients of k{approx}10{sup {minus}7}. Application of electric field during cross linking can polarize (``pole``) the film to greatly enhance the nonlinear optical properties. ``Poling`` films with the polymer multilayer technique offers advantages over conventional approaches, in that the polarization should not decay over time. Battelle`s Pacific Northwest Laboratory is well suited for bringing linear and nonlinear polymer multilayer optical filter technology to manufacturing production status for batch and wide area web applications. 10 figs.

  4. Extremely high rate deposition of polymer multilayer optical thin film materials

    SciTech Connect

    Affinito, J.D.

    1993-01-01

    This paper highlights a new technique for extremely high rate deposition of optical dielectric films (vacuum deposition of polymer multilayer thin films). This is a way to produce multilayer optical filters comprised of thousands of layers of either linear or nonlinear optical materials. The technique involves the flash evaporation of an acrylic monomer onto a moving substrate; the monomer is then cured. Acrylic polymers deposited to date are very clear for wavelengths between 0.35 and 2.5 [mu]m; they have extinction coefficients of k[approx]10[sup [minus]7]. Application of electric field during cross linking can polarize (''pole'') the film to greatly enhance the nonlinear optical properties. ''Poling'' films with the polymer multilayer technique offers advantages over conventional approaches, in that the polarization should not decay over time. Battelle's Pacific Northwest Laboratory is well suited for bringing linear and nonlinear polymer multilayer optical filter technology to manufacturing production status for batch and wide area web applications. 10 figs.

  5. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    PubMed Central

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  6. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    NASA Astrophysics Data System (ADS)

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-05-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers.

  7. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    PubMed

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  8. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films.

    PubMed

    Bouška, M; Pechev, S; Simon, Q; Boidin, R; Nazabal, V; Gutwirth, J; Baudet, E; Němec, P

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  9. Structural, morphological and optical properties of CeO2 thin films deposited by RF sputtering

    NASA Astrophysics Data System (ADS)

    Murugan, R.; Vijayaprasath, G.; Sakthivel, P.; Mahalingam, T.; Ravi, G.

    2016-05-01

    Cerium oxide (CeO2) thin films were deposited on glass substrates by sputtering at various substrate temperatures. CeO2 films were characterized by X-ray diffraction, FESEM, PL and Raman analyses. X-ray diffraction patterns of films reveal fcc cubic structure with preferential orientation along (2 2 0) crystallographic plane. SEM images show that the particles are uniformly distributed on the film surface. The films were found to be well adheared to the substrates and pin holes are not observed on the surface of the films. PL spectra exhibits a strong near band-gap-edge emission and a broad blue, green luminescence, which can be assigned to the presence of Ce and O vacancies, amorphous phases, deep level impurities and structural defects. The relative intensity between the different peaks of the bands related to defects or impurities was studied as a tool for quality control of the films. Moreover, vibrational measurements through Raman analysis were carried out and the results are discussed.

  10. Characterization of high temperature deposited Ti-containing hydrogenated carbon thin films

    NASA Astrophysics Data System (ADS)

    Shi, B.; Meng, W. J.; Evans, R. D.

    2004-12-01

    A detailed structural and mechanical characterization was performed on Ti-containing hydrogenated amorphous carbon (Ti-C:H) thin films deposited at ˜600°C by plasma assisted hybrid chemical/physical vapor deposition. The structural and mechanical characteristics of these specimens were compared to those deposited at the lower temperature of ˜250°C. The results indicated that Ti-C :H consisted of a nanocrystalline TiC phase and a hydrogenated amorphous carbon (a-C:H) phase, and that Ti atoms were incorporated into Ti-C :H predominantly as B1-TiC. Deposition at ˜600°C promoted TiC precipitation, resulting in little Ti dissolution within the a-C :H matrix. High temperature deposited Ti-C :H specimens were found to possess lower modulus and hardness values as compared to low temperature deposited specimens, especially at low Ti compositions. This is rationalized by electron microscopy evidence of increased short and medium range graphitic order within the a-C :H matrix of high temperature deposited Ti-C :H, and supported by additional Raman spectroscopic observations. Heat treatments at 600 °C combined with Raman scattering measurements showed that the a-C :H matrix in high temperature deposited Ti-C :H specimens appears to be less structurally sensitive to additional annealing.

  11. Chemical vapor deposition and characterization of zinc oxide thin films and nanostructures

    NASA Astrophysics Data System (ADS)

    Liu, Xiang

    2003-07-01

    Zinc oxide (ZnO) is a wide band gap semiconductor material. It is a promising candidate for short wavelength optoelectronic devices. Single crystalline and nanocrystalline ZnO thin films have been grown by organo-metallic chemical vapor depositions in a pulsed organo-metallic beam epitaxy (POMBE) system. The structural and morphological properties of ZnO films strongly depend on growth conditions. For epitaxially grown ZnO films on sapphire under optimal conditions, excellent crystallinity have been confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM) studies. Nanocrystalline films with columnar-shaped grains are grown with different grain sizes. With decreasing growth temperature, the morphology of POMBE grown ZnO goes through an transition from continuous thin film to nanorods. Well-aligned ZnO nanorods have been grown using two-step chemical vapor deposition methods. The growth mechanism is based on studies of ZnO nucleation. By controlling substrate temperature and oxygen concentration during the nucleation and growth steps, ZnO nanorods growth is achieved without any catalysts. High-resolution TEM studies show that ZnO nanorods are single crystals. Alignment of these nanorods depends on lattice match between ZnO and substrate. ZnO nanorods with different areal densities can be obtained by varying nucleation time. The photoluminescence (PL) spectra of nonorods have shown band edge emission at 380 nm with full width at half maximum (FWHM) of 106 meV which is comparable to films grown by molecular beam epitaxy (MBE). Green emissions are found to originate from oxygen vacancies and zinc interstitials; while orange-red emissions are attributed to oxygen interstitials. Optical properties of ZnO thin films and nanostructures are studied. Clear excitonic features observed in different optical measurements have proven good optical qualities of single crystal ZnO films. By alloying with magnesium, band gap of ZnO can be widened

  12. Use of supercritical fluid solution expansion processes for drug delivery, particle synthesis, and thin film deposition

    SciTech Connect

    Hybertson, B.M.

    1992-01-01

    Properties of the gases and aerosols resulting from the expansion of supercritical fluid solutions were studied. Film deposition, particle formation, and drug delivery processes using supercritical fluids were developed. Thin films of palladium, copper, aluminum, silver, and silicon dioxide were deposited by a method called supercritical fluid transport-chemical deposition (SFT-CD). In each case, a precursor compound was dissolved in a supercritical fluid and the solution was allowed to expand through a restrictor nozzle into a reaction chamber at subcritical pressure, resulting in the formation of aerosol particles of the precursor. A chemical reaction was induced to occur at the surface of a substrate, resulting in deposition of a thin film. Micron-sized particles of aluminum fluoride and copper oxide were synthesized by a method called supercritical fluid transport-chemical formation of particles (SFT-CFP). The process was similar to that in SFT-CD, but the chemical reactions were induced to occur in the gas phase instead of at a substrate surface, resulting in the formation of fine particles. A new method of pulmonary drug delivery called supercritical fluid drug delivery (SFDD) was conceived and demonstrated. In SFDD a drug compound is dissolved in a supercritical fluid, and the solution is allowed to expand through a restrictor nozzle. The resultant aerosol is directly inhaled by a human or animal subject and the fine drug particles are deposited in the lungs. Menthol, vanillin, camphor, cholesterol, Sudan III, and Oil Blue N were used as model drug compounds for SFDD. Delivery of [alpha]-tocopherol to rat lung tissue was demonstrated, with observed increases of 80-290% above background levels.

  13. Low-temperature atomic layer deposition of MgO thin films on Si

    NASA Astrophysics Data System (ADS)

    Vangelista, S.; Mantovan, R.; Lamperti, A.; Tallarida, G.; Kutrzeba-Kotowska, B.; Spiga, S.; Fanciulli, M.

    2013-12-01

    Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80-350 °C by using bis(cyclopentadienyl)magnesium and H2O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO2/Si substrates at a constant growth rate of ˜0.12 nm cycle-1. The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C-V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6-11 nm thickness range, allow determining a dielectric constant (κ) ˜ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10-5-10-6 Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C-V and I-V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition.

  14. Electrochemical co-deposition of conductive polymer-silica hybrid thin films.

    PubMed

    Raveh, Moran; Liu, Liang; Mandler, Daniel

    2013-07-14

    Conductive polymers, such as polypyrrole (ppy), have been the subject of numerous studies due to their promising applications in organic solar cells, flexible electronics, electrochromic devices, super capacitors, etc. Yet, their application is still limited as a result of poor processability. Silica has been reported to improve the mechanical strength and adhesion of conductive polymer films. In this work, we propose a controllable electrochemical approach for preparing ppy-silica hybrid thin films from a solution containing both pyrrole and silane monomers. It is known that pyrrole can be electropolymerised using anodic potentials, while silica can be electrodeposited under cathodic potentials. Thus, we studied the formation of ppy-silica hybrid thin films on a stainless steel surface by applying alternating potentials, i.e. cathodic followed by anodic pulses (denoted C + A) or anodic followed by cathodic pulses (denoted A + C). We show that by controlling the deposition potential and time for the cathodic and anodic pulses, the film thickness and composition can be manipulated well as analysed using profilometry and EDX. The element depth profile of the films was characterized using secondary ion mass spectroscopy (SIMS). In essence, for the C + A process, pyrrole diffuses through the cathodically electrodeposited wet silica gel layer and undergoes anodic polymerisation on the substrate, while for the A + C process, silane can be electrodeposited both on top of the anodically electrodeposited conductive ppy films as well as on the stainless steel through the pinholes in the ppy film. This offers a simple approach for tuning the structure of conductive polymer-sol-gel composite films.

  15. Photoelectrochemical performance of W-doped BiVO4 thin films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Holland, S. Keith; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

    2014-01-01

    The effects of tungsten doping and hydrogen annealing on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting were studied. Thin films of BiVO were deposited on indium tin oxide-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) to the precursor. The 1.7- to 2.2-μm-thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375°C in 3% H exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination, where photocurrent densities of up to 1.3 mA cm-2 at 0.5 V with respect to Ag/AgCl were achieved. Films doped with 1% or 5% (atomic percent) tungsten from either STA or AMT exhibited reduced PEC performance and greater sample-to-sample performance variations. Powder x-ray diffraction data indicated that the films continue to crystallize in the monoclinic polymorph at low doping levels but crystallize in the tetragonal scheelite structure at higher doping. It is surmised that the phase and morphology differences promoted by the addition of W during the deposition process reduced the PEC performance as measured by photovoltammetry.

  16. Chemical vapour deposition of nitrogen-doped titanium dioxide thin films.

    PubMed

    Alexandrov, S E; Baryshnikova, M V; Filatov, L A; Shahmin, A L; Andreeva, V D

    2011-09-01

    Nitrogen-doped titanium dioxide is often considered as a promising nanomaterial for photocatalytic applications. Here we report the first results of a study of APCVD of N-doped TiO2 thin films prepared with the use of ammonia as a source of nitrogen and titanium tetraisopropoxide (TTIP) as a source of Ti and O atoms. The obtained films were analyzed with X-ray diffraction, infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, UV-Vis spectroscopy, and ellipsometry. It was found that the film growth rate in the TTIP-NH3-Ar reaction system varied insignificantly with substrate temperature in the range of 450,..., 750 degrees C and did not exceed 4.4 nm/min. Yellow and orange layers with nitrogen content of about 7.6% were formed at the deposition temperature higher than 600 degrees C. The results of the structure analysis of the deposited films showed that addition of ammonia led to stabilization of the amorphous phase in the films. The effect of ammonia on optical and photocatalytic properties was also considered. PMID:22097568

  17. Epitaxial growth of metal fluoride thin films by pulsed-laser deposition

    SciTech Connect

    Norton, D.P.; Budal, J.D.; Chakoumakos, B.C.; Geohegan, D.B.; Puretzky, A.

    1995-12-01

    We have studied growth of GdLiF4 thin films for optical waveguide applications. Epitaxial, c-axis oriented GdLiF4 films wer grown from undoped GdLiF4 targets in an on-axis Pulsed-laser deposition geometry on (100) CaF2. These films exhibit a high density of particulates on the surface which are ejected from the target in the ablation process. Growth from Nd-doped polycrystalline GdLiF4 ablation targets results in smooth films with lower particulate densities, as Nd doping increases the optical absorption of GdLiF4 at the ablation laser wavelength 193 nm and permits efficient pulsed-laser deposition. Optical emission spectra of the ablation pume reveals the presence of atomic F, Gd, and Li, indicating the dissociation of the metal-fluorine bonds in the ablation process. In addition, we find that the residual background oxygen pressure must be reduced to avoid formation of Gd4O3F6 as an impurity oxyfluoride phase in the films.

  18. In-situ post-deposition thermal annealing of co-evaporated Cu(InGa)Se2 thin films deposited at low temperatures

    SciTech Connect

    Wilson, James D.; McCandless, Brian E.; Birkmire, Robert W.; Shafarman, William N.

    2009-06-09

    The effects of deposition temperature and in-situ post-deposition annealing on the microstructure of coevaporated Cu(InGa)Se2 thin films and on the performance of the resulting solar cell devices have been characterized. Films were deposited at substrate temperatures of 150°C, 300°C and 400°C. Films were also deposited at these temperatures and then annealed in-situ at 550°C for 10 minutes. In as -deposited films without annealing, additional XRD reflections that may be due to a polytypic modification of the chalcopyrite phase were observed. Films deposited at 150°C were Se-rich. Post-deposition annealing caused microstructural changes in all films and improved the resulting solar cells. Only films deposited at 400°C, however, yielded high-efficiency devices after post-deposition annealing that were equivalent to devices made from films grown at 550°C. Films originally deposited at 300°C yielded devices after post-deposition annealing with VOC close to that of devices made from films grown at 550°C, despite smaller grain size.

  19. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    NASA Astrophysics Data System (ADS)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  20. Effective role of deposition duration on the growth of V2O5 nanostructured thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Rabindar Kumar; Saini, Sujit Kumar; Singh, Megha; Reddy, G. B.

    2016-05-01

    In this report, vanadium pentoxide nanostructured thin films (NSTs) with nanoplates (NPs) have synthesized on Ni coated glass substrate employing plasma assisted sublimation process (PASP), as a function of deposition/growth durations. The effect of deposition durations on the morphological, structural, vibrational, and compositional properties have been investigated one by one. The structural and vibrational studies endorsed that the grown NPs have only orthorhombic phase, no other sub oxide phases are recorded in the limit of resolution. The morphological results of all samples using SEM, revealed that the features, coverage density, and alignments of NPs are greatly controlled by deposition duration and the best sample is obtained for 25 min (S2). Further, the more insight information is accomplished by HRTEM/SAED on the best featured sample, which confirmed the single crystalline nature of NPs. The XPS result again confirmed the compositional purity and the nearly stoichiometric nature of NPs.

  1. Effect of precursor concentration and bath temperature on the growth of chemical bath deposited tin sulphide thin films

    NASA Astrophysics Data System (ADS)

    Jayasree, Y.; Chalapathi, U.; Uday Bhaskar, P.; Sundara Raja, V.

    2012-01-01

    SnS is a promising candidate for a low-cost, non-toxic solar cell absorber layer. Tin sulphide thin films have been deposited by chemical bath deposition technique from a solution containing stannous chloride, thioacetamide, ammonia and triethanolamine (TEA). The effects of concentration of tin salt, triethanolamine and bath temperature on the growth of tin sulphide films have been investigated in order to optimize the growth conditions to obtain tin monosulphide (SnS) films. SnS films obtained under optimized conditions were found to be polycrystalline in nature with orthorhombic structure. The optical band gap of these films was found to be 1.5 eV.

  2. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  3. Innovative deposition techniques for the fabrication of polycrystalline thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.

    1992-12-01

    A key issue for photovoltaics (PV), both in terrestrial and future space applications, is producibility, particularly for applications utilizing a large volume of PV. Among the concerns for fabrication of polycrystalline thin-film photovoltaics, such as copper-indium-diselenide (CIS) and cadmium-telluride (CdTe), are production volume, which translates directly related to cost, and minimization of waste. Both the rotating cylindrical magnetron (C-MagTM) and pulsed electrodeposition have tremendous potential for the fabrication of polycrystalline thin-film photovoltaics due to scaleability, efficient utilization of source materials and inherently higher deposition rates. In the case of sputtering, the unique geometry of the C-MagTM facilitates innovative cosputtering and reactive sputtering that could lead to greater throughput, reduced health and safety risks, and ultimately lower fabrication cost. For pulsed electrodeposition, the films appear to be more tightly adherent and deposited at an enhanced rate when compared to conventional DC electrodeposition. This paper addresses Martin Marietta's investigation into innovative sputtering techniques and pulsed electrodeposition with a near-term goal of 930 cm2 (1 ft2) monolithically-integrated CIS and CdTe submodules.

  4. Innovative deposition techniques for the fabrication of polycrystalline thin-film photovoltaics

    SciTech Connect

    Armstrong, J.H.; Lanning, B.R.; Misra, M.S. )

    1992-12-01

    A key issue for photovoltaics (PV), both in terrestrial and future space applications, is [ital producibility], particularly for applications utilizing a large volume of PV. Among the concerns for fabrication of polycrystalline thin-film photovoltaics, such as copper-indium-diselenide (CIS) and cadmium-telluride (CdTe), are production volume, which translates directly related to cost, and minimization of waste. Both the rotating cylindrical magnetron (C-Mag[sup TM]) and pulsed electrodeposition have tremendous potential for the fabrication of polycrystalline thin-film photovoltaics due to scaleability, efficient utilization of source materials and inherently higher deposition rates. In the case of sputtering, the unique geometry of the C-Mag[sup TM] facilitates innovative cosputtering and reactive sputtering that could lead to greater throughput, reduced health and safety risks, and ultimately lower fabrication cost. For pulsed electrodeposition, the films appear to be more tightly adherent and deposited at an enhanced rate when compared to conventional DC electrodeposition. This paper addresses Martin Marietta's investigation into innovative sputtering techniques and pulsed electrodeposition with a near-term goal of 930 cm[sup 2] (1 ft[sup 2]) monolithically-integrated CIS and CdTe submodules.

  5. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect

    Allen, T. G. Cuevas, A.

    2014-07-21

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  6. Electro deposition of cuprous oxide for thin film solar cell applications

    NASA Astrophysics Data System (ADS)

    Shahrestani, Seyed Mohammad

    p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the

  7. Hydrophobic properties of polytetrafluoroethylene thin films fabricated at various catalyzer temperatures through catalytic chemical vapor deposition using a tungsten catalyzer.

    PubMed

    Cha, Jeong Ok; Yeo, Seung Jun; Pode, Ramchandra; Ahn, Jeung Sun

    2011-07-01

    Using the catalytic chemical vapor deposition (Cat-CVD) method, polytetrafluoroethylene (PTFE) thin films were fabricated on Si(100) substrates at various catalyzer temperatures, using a tungsten catalyzer, and Fourier transform infrared (FTIR) spectroscopy and X-ray photoemission spectroscopy (XPS) were used to confirm the fabrication of the films. An atomic-force microscope (AFM) and a scanning electron microscope (SEM) were employed to study the correlation between the wettability and surface morphology of the samples. It was found that the wettability of the PTFE thin films fabricated via Cat-CVD is strongly correlated with the sizes of the film surfaces' nanoprotrusions, and that superhydrophobic PTFE thin-film surfaces can be easily achieved by controlling the sizes of the nanoprotrusions through the catalyzer temperature. The comparison of the wettability values and surface morphologies of the films confirmed that nanoscale surface roughness enhances the hydrophobic properties of PTFE thin films. Further, the detailed analysis of the films' surface morphologies from their AFM images with the use of the Wenzel and Cassie models confirmed that the nanoscale surface roughness enhanced the hydrophobic property of the PTFE films. Further, the variations of the wettability of the PTFE thin films prepared via Cat-CVD are well explained by the Cassie model. It seems that the increase in the trapping air and the reduction of the liquid-solid contact area are responsible for the superhydrophobicity of the PTFE thin films prepared via Cat-CVD. PMID:22121615

  8. Structural analysis of ferromagnetic Ni-Mn-Sn thin films fabricated by co-sputter deposition

    NASA Astrophysics Data System (ADS)

    Guvenc, Sema; Yumak, Mehmet; Nedelcos, A. Quintana; Llamazares, J. L. Sanchez; Garcia, Carlos Garcia

    2015-03-01

    Ferromagnetic Ni-Mn-X (Sn, In) alloys are predicted as potential candidates for energy efficient Magnetocaloric Effect (MCE) technologies. The MCE is the basis of magnetic refrigeration and it leads to a groundbreaking progress on conventional refrigeration methods. In our research, Ni-Mn-Sn thin films were fabricated by co-sputter deposition method. The Mn losses due to the high Mn vapor pressure produce a deviation from the desired Ni50Mn37Sn13 composition, which are partially compensated by increasing power of the Mn target gun. A systematic study of thin film co-sputter fabrication was divided into three stages; i) a Ni-Mn-Sn target was evaporated at different temperatures in order to study the grain size temperature dependence, ii) the nominal chemical composition (Ni50Mn37Sn13) was reached by controlling the power value applied to the Mn target, iii) the dependence of the phase transformation temperature with the grain size of the thin film alloys was studied. Grain size can be controlled by modifying the substrate temperature (Ts) .

  9. ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

    NASA Astrophysics Data System (ADS)

    Deshmukh, S. G.; Jariwala, Akshay; Agarwal, Anubha; Patel, Chetna; Panchal, A. K.; Kheraj, Vipul

    2016-04-01

    ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl2 and Na2S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grain size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm-1 and 1094 cm-1. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.

  10. Deposition of High-Temperature Superconducting Thin Films on Metallic and Nometallic Substrates by Laser Ablation.

    NASA Astrophysics Data System (ADS)

    Wu, Anqi

    This dissertation covers my research in four steps: basic understanding of the theory of superconductors, development of the experimental setup, deposition of high temperature superconducting thin films (HTSTF) on metallic and nonmetallic substrates by laser ablation, and characterization HTSTFs on metallic and nonmetallic substrates. High quality HTSTFs have been grown on metallic and nonmetallic substrates, including SrTiO_3 , MgO, YSZ, Cu, Ag, Ni, and Stainless Steel. Of particular note, there have been no other successful reports of a superconducting YBa_2Cu _3O_{rm 7-x} (YBCO) film on Cu. Cu is a unique candidate for a YBCO substrate material. My investigation shows that it is possible, using laser ablation, to make good YBCO films on Cu substrates, possessing a natural oxide layer interface. The films on Cu exhibit a metallic normal state, and a resistive transition width of 6 K to zero resistance (R ~ 0) at 84 K. We determined the critical current density, J_{rm c}, to be 1,300 A/cm^2 at 13 K by the 4-probe transport method. The Naval Research Laboratory found J_{rm c} of another film to be about 3,880 A/cm ^2 at 4.2 K using the contactless single coil method. Analysis of the film compositions and structures have been made using XRD, EDAX, SEM, and AFM. STM, AFM, and high-magnification SEM images of the YBCO films on Cu show random orientation and rough surface relative to similar films on SrTiO_3, MgO, and YSZ. Due to the formation of a natural, irregular Cu oxide layer between the film and Cu substrate, the gaps between grains of YBCO on polycrystalline Cu are definitely larger than those of films deposited on single crystal such as SrTiO_3 (J_{ rm c} = 1.4 times 10^6 A/cm^2 at 77 K). This may explain the differences in J _{rm c}. The Cu-oxide layer significantly affects the quality of YBCO film on Cu because of larger lattice mismatches and thermal expansion differences between the Cu-oxide and YBCO film compared to Cu and YBCO. Applying an electric field

  11. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  12. A simple solution to the problem of effective utilisation of the target material for pulsed laser deposition of thin films

    NASA Astrophysics Data System (ADS)

    Kuzanyan, A. S.; Kuzanyan, A. A.; Petrosyan, V. A.; Pilosyan, S. Kh; Grasiuk, A. Z.

    2013-12-01

    The factors determining the efficiency of the target material utilisation for pulsed laser deposition of films are considered. The target volume is calculated, which is evaporated in the ablation process by the focused laser radiation having a rectangular form. The new device is suggested and developed for obtaining thin films by the method of laser deposition, which is specific in the employment of a simple optical system mounted outside a deposition chamber that comprises two lenses and the diaphragm and focuses the laser beam onto a target in the form of a sector-like spot. Thin films of CuO and YBaCuO were deposited with this device. Several deposition cycles revealed that the target material is consumed uniformly from the entire surface of the target. A maximal spread of the target thickness was not greater than +/-2% both prior to deposition and after it. The device designed provides a high coefficient of the target material utilisation efficiency.

  13. ZnO thin film deposition using colliding plasma plumes and single plasma plume: Structural and optical properties

    SciTech Connect

    Gupta, Shyam L. Thareja, Raj K.

    2013-12-14

    We report the comparative study on synthesis of thin films of ZnO on glass substrates using IR laser ablated colliding plasma plumes and conventional pulsed laser deposition using 355 nm in oxygen ambient. The optical properties of deposited films are characterized using optical transmission in the UV-visible range of spectrum and photoluminescence measurements. X-ray diffraction and atomic force microscopy are used to investigate the surface morphology of synthesized ZnO films. The films synthesized using colliding plumes created with 1064 nm are non-polar a-plane ZnO with transmission in UV-visible (300–800 nm) region ∼60% compared to polycrystalline thin film deposited using single plume which has chunk deposition and poor optical response. However, deposition with 355 nm single plume shows polar c-axis oriented thin film with average roughness (∼thickness) of ∼86 nm (∼850 nm) compared to ∼2 nm (∼3 μm) for 1064 nm colliding plumes. These observed differences in the quality and properties of thin films are attributed to the flux of mono-energetic plasma species with almost uniform kinetic energy and higher thermal velocity reaching the substrate from interaction/stagnation zone of colliding plasma plumes.

  14. New ion-assisted filtered cathodic arc deposition (IFCAD) technology for producing advanced thin films on temperature-sensitive substrates

    NASA Astrophysics Data System (ADS)

    Fulton, Michael L.

    1999-10-01

    An innovative Ion-Assisted Filtered Cathodic Arc Deposition (IFCAD) system has been developed for low temperature production of thin-film coatings. The IFCAD system employs electro-magnetic and mechanical filtering techniques to remove unwanted macroparticles and neutral atoms from the plasma stream. Therefore, only ions within a defined energy range arrive at the substrate surface, depositing thin-films with excellent mechanical and optical properties. Ion- Assisted-Deposition is coupled with Filtered Cathodic Arc technology to enhance and modify the arc deposited thin- films. Using an advanced computer controlled plasma beam scanning system, high quality, large area, uniform IFCAD multi-layer film structures are attained. Amorphous Diamond- Like-Carbon films (up to 85% sp3 bonded carbon; and micro- hardness greater than 50 GPa) have been deposited in multi- layer thin-film combinations with other IFCAD source materials (such as: Al2O3) for optical and tribological applications. Rutile TiO2 (refractive index of 2.8 at 500 nm) has been deposited with this technology for advanced optical filter applications. The new IFCAD technology has been included in development programs, such as: plastic and glass lens coatings for optical systems; wear resistant coatings on various metal substrates, ultra smooth, durable, surface hydrophobic coatings for aircraft windows; EUV coatings for space instrumentation; transparent conductive coatings; and UV protective coatings for solar cell concentrator plastic Fresnel lens elements for space power.

  15. Sputtered lead scandium tantalate thin films: crystallization behaviour during post-deposition annealing

    NASA Astrophysics Data System (ADS)

    Huang, Z.; Donohue, P. P.; Todd, M. A.; Jones, J. C.; Whatmore, R. W.

    2001-11-01

    Lead scandium titanate (PST) thin films were deposited by RF dual magnetron sputtering and then annealed either by vacuum furnace or combined rapid thermal annealing (RTA) and furnace anneal. The film structure was investigated by x-ray diffraction, scanning electron microscopy and transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy techniques. Lead loss was more severe using furnace annealing than the combined RTA and furnace anneal. The annealed films were characterized by the presence of voids and exhibited relaxor ferroelectric characteristics. PST perovskite crystal grains were found to co-exist with pyrochlore matrix in the furnace-only annealed films, whilst in RTA annealed films no apparent pyrochlore morphology was observed in the TEM image. Lead was found to diffuse through the bottom electrode Pt layer during the annealing. Films treated by combining RTA and furnace annealing have shown pyroelectric coefficients under field of up to 500 µC m-2 K-1, a dielectric loss of below 0.007 and a merit figure for thermal detection of 2.5×10-5 Pa-1/2.

  16. Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness

    SciTech Connect

    Lau, W. S. Wan, X.; Xu, Y.; Wong, H.; Zhang, J.; Luo, J. K.

    2014-02-15

    Previously, Lau (one of the authors) pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD) on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

  17. Lithium phosphorus oxynitride solid-state thin-film electrolyte deposited and modified by bias sputtering and low temperature annealing

    SciTech Connect

    Chiu, K.-F.; Chen, C. C.; Lin, K. M.; Lo, C. C.; Lin, H. C.; Ho, W.-H.; Jiang, C. S.

    2010-07-15

    Amorphous lithium phosphorus oxynitride (LiPON) solid-state thin-film electrolyte has been deposited and characterized. The thin films were prepared by rf magnetron sputtering under various substrate biases. By fabricating under different substrate biases and applying low temperature annealing (473 K), the properties of the LiPON thin-film electrolytes and the electrolyte/cathode interfaces were modified. The ionic conductivity as high as 9.4x10{sup -4} S m{sup -1} can be obtained by depositing at optimal bias. The performances of the consequently fabricated SnO{sub 2}/LiPON/LiMn{sub 2}O{sub 4} all-solid-state lithium ion thin-film batteries were improved using the bias sputtering technique, due to the enhanced the ionic conductivity and uniform interface.

  18. Process for depositing thin film layers onto surfaces modified with organic functional groups and products formed thereby

    DOEpatents

    Tarasevich, Barbara J.; Rieke, Peter C.

    1998-01-01

    A method is provided for producing a thin film product, comprising a first step in which an underlying substrate of a first material is provided. The underlying substrate includes a plurality of unmodified sites. The underlying substrate is then chemically modified wherein a plurality of organic functional groups are attached to a plurality of the unmodified sites. The arrangement and type of the functional group used can be selected for the purpose of controlling particular properties of the second material deposited. A thin film layer of at least one second material is then deposited onto the chemically modified underlying substrate. This can be accomplished by connecting the thin film to the underlying substrate by binding the thin film to the functional groups.

  19. Process for depositing thin film layers onto surfaces modified with organic functional groups and products formed thereby

    DOEpatents

    Tarasevich, B.J.; Rieke, P.C.

    1998-06-02

    A method is provided for producing a thin film product, comprising a first step in which an underlying substrate of a first material is provided. The underlying substrate includes a plurality of unmodified sites. The underlying substrate is then chemically modified wherein a plurality of organic functional groups are attached to a plurality of the unmodified sites. The arrangement and type of the functional group used can be selected for the purpose of controlling particular properties of the second material deposited. A thin film layer of at least one second material is then deposited onto the chemically modified underlying substrate. This can be accomplished by connecting the thin film to the underlying substrate by binding the thin film to the functional groups. 5 figs.

  20. Low-temperature roll-to-roll atmospheric atomic layer deposition of Al₂O₃ thin films.

    PubMed

    Ali, Kamran; Choi, Kyung-Hyun

    2014-12-01

    The Al2O3 thin films deposition through conventional ALD systems is a well-established process. The process under low temperatures has been studied by few research groups. In this paper, we report on the detailed study of low-temperature Al2O3 thin films deposited via a unique in-house built system of roll-to-roll atmospheric atomic layer deposition (R2R-AALD) using a multiple-slit gas source head. Al2O3 thin films have been grown on polyethylene terephthalate substrates under a very low-temperature zone of room temperature to 50 °C and working pressure of 750 Torr, which is very near to atmospheric pressure (760 Torr). Al2O3 thin films with superior properties were achieved in the temperature range of the ALD window. An appreciable growth rate of 0.97 Å/cycle was observed for the films deposited at 40 °C. The films have good morphological features with a very low average arithmetic roughness (Ra) of 0.90 nm. The films also showed good chemical, electrical, and optical characteristics. It was observed that the film characteristics improve with the increase in deposition temperature to the range of the ALD window. The fabrication of Al2O3 films was confirmed by X-ray photoelectron spectroscopy (XPS) analysis with the appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74, 119, and 531 eV, respectively. The chemical composition was also supported by the Fourier transform infrared spectroscopy (FTIR). The fabricated Al2O3 films demonstrate good insulating properties and optical transmittance of more than 85% in the visible region. The results state that Al2O3 thin films can be effectively fabricated through the R2R-AALD system at temperatures as low as 40 °C.

  1. Electron beam-physical vapor deposition of SiC/SiO 2 high emissivity thin film

    NASA Astrophysics Data System (ADS)

    Yi, Jian; He, XiaoDong; Sun, Yue; Li, Yao

    2007-02-01

    When heated by high-energy electron beam (EB), SiC can decompose into C and Si vapor. Subsequently, Si vapor reacts with metal oxide thin film on substrate surface and formats dense SiO 2 thin film at high substrate temperature. By means of the two reactions, SiC/SiO 2 composite thin film was prepared on the pre-oxidized 316 stainless steel (SS) substrate by electron beam-physical vapor deposition (EB-PVD) only using β-SiC target at 1000 °C. The thin film was examined by energy dispersive spectroscopy (EDS), grazing incidence X-ray asymmetry diffraction (GIAXD), scanning electron microscopy (SEM), atomic force microscopy (AFM), backscattered electron image (BSE), electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Fourier transformed infra-red (FT-IR) spectroscopy. The analysis results show that the thin film is mainly composed of imperfect nano-crystalline phases of 3C-SiC and SiO 2, especially, SiO 2 phase is nearly amorphous. Moreover, the smooth and dense thin film surface consists of nano-sized particles, and the interface between SiC/SiO 2 composite thin film and SS substrate is perfect. At last, the emissivity of SS substrate is improved by the SiC/SiO 2 composite thin film.

  2. Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical model

    NASA Astrophysics Data System (ADS)

    Singh, Rajiv K.; Narayan, J.

    1990-05-01

    We have studied in detail the physical phenomena involved in the interaction of high-powered nanosecond excimer-laser pulses with bulk targets resulting in evaporation, plasma formation, and subsequent deposition of thin films. A theoretical model for simulating these laser-plasma-solid interactions has been developed. In this model, the laser-generated plasma is treated as an ideal gas at high pressure and temperature, which is initially confined in small dimensions, and is suddenly allowed to expand in vacuum. The three-dimensional expansion of this plasma gives rise to the characteristic spatial thickness and compositional variations observed in laser-deposited thin films of multicomponent systems. The forward-directed nature of the laser evaporation process has been found to result from anisotropic expansion velocities of the atomic species which are controlled by the dimensions of the expanding plasma. Based on the nature of interaction of the laser beam with the target and the evaporated material, the pulsed-laser evaporation (PLE) process can be classified into three separate regimes: (i) interaction of the laser beam with the bulk target, (ii) plasma formation, heating, and initial three-dimensional isothermal expansion, and (iii) adiabatic expansion and deposition of thin films. The first two processes occur during the time interval of the laser pulse, while the last process initiates after the laser pulse terminates. Under PLE conditions, the evaporation of the target is assumed to be thermal in nature, while the plasma expansion dynamics is nonthermal as a result of interaction of the laser beam with the evaporated material. The equations of compressible gas dynamics are set up to simulate the expansion of the plasma in the last two regimes. The solution of the gas-dynamics equations shows that the expansion velocities of the plasma are related to its initial dimensions and temperature, and the atomic weight of the species. Detailed simulations analyzing

  3. A study on the radiation resistance of CdWO4 thin-film scintillators deposited by using an electron-beam physical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Park, Seyong; Yoon, Young Soo

    2016-09-01

    In this paper, we report the first successful fabrication of CdWO4 thin film scintillators deposited on quartz glass substrates by using an electron-beam physical vapor deposition method. The films were dense, uniform, and crack-free. CdWO4 thin-film samples of varying thicknesses were investigated by using structural and optical characterization techniques. An optimized thickness for the CdWO4 thin-film scintillators was discovered. The scintillation and the optical properties were found to depend strongly on the annealing process. The annealing process resulted in thin films with a distinct crystal structure and with improved transparency and scintillation properties. For potential applications in gamma-ray energy storage systems, photoluminescence measurements were performed using gamma rays at a dose rate of 10 kGy h-1.

  4. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  5. Orientation dependent Ti diffusion in YNMO/STO thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Coy, L. E.; Yate, L.; Ventura, J.; Załęski, K.; Tadyszak, K.; Ferrater, C.; Polo, M. C.; Varela, M.

    2016-11-01

    Epitaxial thin films of double perovskite Y(Ni0.5Mn0.5)O3(001) and Y(Ni0.5Mn0.5)O3(101) grown on SrTiO3(001) and SrTiO3(111), respectively, were studied by XPS and SQUID magnetometer. Temperature dependent Ti diffusion was detected in the Y(Ni0.5Mn0.5)O3(101)/SrTiO3(111) samples, while no diffusion was observed in Y(Ni0.5Mn0.5)O3(001)/SrTiO3(001) samples. It was observed that the use of a low ablation rate promoted ionic migrations, mainly due to the associated annealing time that samples undergo when grown at lower rates. The migration speed was determined by XPS analysis and its influence on the magnetic properties of the Y(Ni0.5Mn0.5)O3 (101) films was characterized and discussed.

  6. Growth of La1-xSrxFeO3 thin films by atomic layer deposition.

    PubMed

    Lie, Martin; Nilsen, Ola; Fjellvåg, Helmer; Kjekshus, Arne

    2009-01-21

    Thin films of La1-xSrxFeO3 have been prepared by the ALD (atomic layer deposition) technique using La(thd)3 (Hthd = 2,2,6,6-tetramethylheptane-3,5-dione), Sr(thd)2, Fe(thd)3, and ozone as precursors. A so-called ALD window is found in the temperature range 200 to 360 degrees C for LaFeO3. The effect of the pulsing procedure for the precursors on the composition of the films is examined. The results are discussed in relation to a model which ascribes differences between pulsed and obtained stoichiometries to individually different surface-area demands of the precursors. The La1-xSrxFeO3 films turned out to contain only small amounts of carbonate impurities despite the fact that films prepared from Sr(thd)2 and ozone under the same conditions contains virtually pure SrCO3. Films of La1-xSrxFeO3 have been deposited on substrates of (amorphous) soda-lime glass and single crystals of Si(100), SrTiO3(100), and LaAlO3(012). Annealed films on soda-lime glass and Si(100) substrates turned out to be polycrystalline with virtually random orientation of the crystallites. Those on MgO(100) and SrTiO3(100) substrates showed some degree of crystal orientation, whereas the annealed films on LaAlO3(012) proved to contain distinctly oriented crystallites with mosaic features.

  7. Thin film deposition at atmospheric pressure using dielectric barrier discharges: Advances on three-dimensional porous substrates and functional coatings

    NASA Astrophysics Data System (ADS)

    Fanelli, Fiorenza; Bosso, Piera; Mastrangelo, Anna Maria; Fracassi, Francesco

    2016-07-01

    Surface processing of materials by atmospheric pressure dielectric barrier discharges (DBDs) has experienced significant growth in recent years. Considerable research efforts have been directed for instance to develop a large variety of processes which exploit different DBD electrode geometries for the direct and remote deposition of thin films from precursors in gas, vapor and aerosol form. This article briefly reviews our recent progress in thin film deposition by DBDs with particular focus on process optimization. The following examples are provided: (i) the plasma-enhanced chemical vapor deposition of thin films on an open-cell foam accomplished by igniting the DBD throughout the entire three-dimensional (3D) porous structure of the substrate, (ii) the preparation of hybrid organic/inorganic nanocomposite coatings using an aerosol-assisted process, (iii) the DBD jet deposition of coatings containing carboxylic acid groups and the improvement of their chemical and morphological stability upon immersion in water.

  8. Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yao; Saint John, David; Jackson, Tom N.; Horn, Mark W.

    2014-06-01

    Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar+ ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

  9. Thin-Film Silicon Photovoltaics: Characterization of Thin-Film Deposition and Analysis of Enhanced Light Trapping from Scattering Nanoparticle Arrays

    NASA Astrophysics Data System (ADS)

    Langeland, Krista S.

    Thin-film solar cells have the potential to significantly decrease the cost of a finished device by cutting materials cost, and the characteristics of carrier transport through a thin film can concurrently increase the device performance over that of a wafer-based cell while tolerating a higher defect density in the absorbing material. However, while silicon is an attractive material for use in solar cells due to its nearly ideal band gap for single-junction cells and its relative abundance, its inefficient absorption of infrared light necessitates the development of light-trapping techniques to avoid losses in current generation. This thesis research has focused on two important goals: the development of a scalable thin-film silicon deposition method that produces high-quality material at minimal cost, and the evaluation of light-trapping mechanisms that will increase photon absorption in these films. Hot-wire chemical vapor deposition is used to fabricate silicon thin films with high crystalline fractions even on inexpensive substrates, and films grown with appropriate growth conditions exhibit initial open-circuit voltages above 450 mV, and while challenges in passivation still exist, this research illustrates the potential of this highly scalable and inexpensive deposition technique. Silver and silicon subwavelength structures were then both fabricated and simulated on ultra-thin silicon films on SiO2 to evaluate their potential for increasing light absorption through plasmonic and physical scattering mechanisms, and spectral response measurements demonstrate over a ten-fold increase in carrier generation with a metal nanoparticle surface array. Periodic dielectric structures exhibit Bloch modes in both measurement and simulation, with an increase in overall quantum efficiency of over 11% from both a flat silicon layer and one that is randomly textured. These results highlight the significant role of scattering particle distribution in determining the light

  10. Near zero temperature coefficient of resistance in Ti:Si:O thin films deposited by magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Mireles, Marcela; Quevedo Lopez, M. A.

    2016-10-01

    Thin films of titanium/silicon/oxygen (Ti:Si:O) deposited by sputtering were evaluated as thin film resistors and the resulting resistance and temperature coefficient of resistance (TCR) was studied. The films were deposited in an Argon atmosphere at room temperature with 1% oxygen and their electrical properties evaluated before and after forming gas (5% H2: 95% N2) annealing at 325 and 450 °C for 1 h. The physical structure was characterized by x-ray diffraction (XRD), elemental composition and depth profile by Rutherford backscattering (RBS), and film composition by x-ray photoelectron spectroscopy (XPS). Carrier mobility, type and concentration were evaluated by Hall effect measurements. Thin films with a Ti:Si ratio of 1.6 exhibited a near zero TCR (-405 ppm °C-1) and sheet resistance (Rsh) at 25 °C of 1 kOhm sq-1.

  11. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    SciTech Connect

    Hoye, Robert L. Z. E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L. E-mail: jld35@cam.ac.uk; Muñoz-Rojas, David; Nelson, Shelby F.; Illiberi, Andrea; Poodt, Paul

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  12. Characterization of the deposition and materials parameters of thin-film TiNi for microactuators and smart materials

    SciTech Connect

    Jardine, A.P.; Madsen, J.S.; Mercado, P.G. . Dept. of Materials Science)

    1994-04-01

    Development of smart materials and materials for microelectromechanical systems (MEMS) are complicated by the need to grow dissimilar active or adaptive materials in close proximity. This entails discouraging unwanted chemical and physical interactions that prevent production of the appropriate phases. An important component of these systems will be thin-film shape memory effect TiNi. This article discusses the characterization of the deposition of thin film TiNi for these applications as well as the cycling speed for MEMS.

  13. Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering

    PubMed Central

    2013-01-01

    The nanomechanical properties of BiFeO3 (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO2/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young's modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall–Petch equation. PMID:23799923

  14. Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates

    SciTech Connect

    Sousa, Romulo R. M. de; Sato, Patricia S.; Nascente, Pedro A. P.; Viana, Bartolomeu C.; Alves, Clodomiro; Nishimoto, Akio

    2015-07-15

    Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical, structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.

  15. Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering.

    PubMed

    Jian, Sheng-Rui; Chang, Huang-Wei; Tseng, Yu-Chin; Chen, Ping-Han; Juang, Jenh-Yih

    2013-01-01

    The nanomechanical properties of BiFeO3 (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO2/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young's modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall-Petch equation. PMID:23799923

  16. Effect of oxygen on growth and properties of diamond thin film deposited at low surface temperature

    SciTech Connect

    Das, D.; Singh, Raj N.; Barney, I. T.; Jackson, A. G.; Mukhopadhyay, S. M.

    2008-11-15

    Polycrystalline diamond thin films are grown on a p-type Si (100) single crystal substrate at a low surface deposition temperature of 455 deg. C using a microwave plasma enhanced chemical vapor deposition process in an Ar-rich Ar/H{sub 2}/CH{sub 4} plasma containing different oxygen levels from 0% to 0.75%. The surface deposition temperatures are measured and monitored by an IR thermometer capable of working in a plasma environment without any interference from the plasma emissions. The lower surface deposition temperature at high microwave power of 1300 W and higher gas pressure of 95 torr is achieved by active cooling of the substrate from the backside using a specially designed cooling stage. An enhanced growth rate from 0.19 to 0.63 {mu}m/h is observed with varying oxygen from 0% to 0.75% in the plasma. Diamond grain size also increased from 0.69 {mu}m for the sample with no oxygen to 1.74 {mu}m for the sample with 0.75% oxygen. The diamond films are characterized using x-ray diffraction, environmental scanning electron microscopy field emission gun, Raman spectroscopy, and x-ray photoelectron spectroscopy. The enhanced growth rate is correlated with the enhanced atomic hydrogen to C{sub 2} ratio with increasing oxygen concentration in the plasma, which is measured by an in situ optical emission spectroscopy.

  17. Electrophoretic deposited TiO2 pigment-based back reflectors for thin film solar cells

    DOE PAGES

    Bills, Braden; Morris, Nathan; Dubey, Mukul; Wang, Qi; Fan, Qi Hua

    2015-01-16

    Highly reflective coatings with strong light scattering effect have many applications in optical components and optoelectronic devices. This paper reports titanium dioxide (TiO2) pigment-based reflectors that have 2.5 times higher broadband diffuse reflection than commercially produced aluminum or silver based reflectors and result in efficiency enhancements of a single-junction amorphous Si solar cell. Electrophoretic deposition is used to produce pigment-based back reflectors with high pigment density, controllable film thickness and site-specific deposition. Electrical conductivity of the pigment-based back reflectors is improved by creating electrical vias throughout the pigment-based back reflector by making holes using an electrical discharge / dielectric breakdownmore » approach followed by a second electrophoretic deposition of conductive nanoparticles into the holes. While previous studies have demonstrated the use of pigment-based back reflectors, for example white paint, on glass superstrate configured thin film Si solar cells, this work presents a scheme for producing pigment-based reflectors on complex shape and flexible substrates. Finally, mechanical durability and scalability are demonstrated on a continuous electrophoretic deposition roll-to-roll system which has flexible metal substrate capability of 4 inch wide and 300 feet long.« less

  18. Fabrication and physico-mechanical properties of thin magnetron sputter deposited silver-containing hydroxyapatite films

    NASA Astrophysics Data System (ADS)

    Ivanova, A. A.; Surmeneva, M. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.; Prymak, O.; Epple, M.; Chaikina, M. V.; Surmenev, R. A.

    2016-01-01

    As a measure of the prevention of implant associated infections, a number of strategies have been recently applied. Silver-containing materials possessing antibacterial activity as expected might have wide applications in orthopedics and dentistry. The present work focuses on the physico-chemical characterization of silver-containing hydroxyapatite (Ag-HA) coating obtained by radio frequency (RF) magnetron sputtering. Mechanochemically synthesized Ag-HA powder (Ca10-xAgx(PO4)6(OH)2-x, x = 1.5) was used as a precursor for sputtering target preparation. Morphology, composition, crystallinity, physico-mechanical features (Young's modulus and nanohardness) of the deposited Ag-HA coatings were investigated. The sputtering of the nanostructured multicomponent target at the applied process conditions allowed to deposit crystalline Ag-HA coating which was confirmed by XRD and FTIR data. The SEM results revealed the formation of the coating with the grain morphology and columnar cross-section structure. The EDX analysis confirmed that Ag-HA coating contained Ca, P, O and Ag with the Ca/P ratio of 1.6 ± 0.1. The evolution of the mechanical properties allowed to conclude that addition of silver to HA film caused increase of the coating nanohardness and elastic modulus compared with those of pure HA thin films deposited under the same deposition conditions.

  19. Growth process of nanosized aluminum thin films by pulsed laser deposition for fluorescence enhancement.

    PubMed

    Abdellaoui, N; Pillonnet, A; Berndt, J; Boulmer-Leborgne, C; Kovacevic, E; Moine, B; Penuelas, J; Pereira, A

    2015-03-20

    Pulsed laser deposition was used to deposit aluminum thin films of various thicknesses (tAl) ranging from 5 to 40 nm and to investigate their growth process when they are deposited onto SiO2 and Y2O3. Atomic force microscopy and x-ray reflectivity measurements show that the structure of the Al films are related to the wettability properties of the underlaying layer. Onto SiO2, ultra-smooth layers of aluminum are obtained, due to a perfect wetting of SiO2 by Al. In contrast when deposited onto Y2O3, percolated Al layers are observed with apparent pore size decreasing from 200 to 82 nm as t(Al) is increased from 5 to 40 nm, respectively. This particular morphology is related to partial dewetting of Al on Y2O3. These two different growth mechanisms of aluminum depend therefore on the surface properties of SiO2 and Y2O3. The plasmon resonance of such Al nanostructures in the UV region was then analyzed by studying the coupling between Eu(3+) rare earth emitters and Al. PMID:25712708

  20. Micropatterning of small molecular weight organic semiconductor thin films using organic vapor phase deposition

    NASA Astrophysics Data System (ADS)

    Shtein, Max; Peumans, Peter; Benziger, Jay B.; Forrest, Stephen R.

    2003-04-01

    Using both analytical and experimental methods, we show that micron scale patterned growth of small molecular weight organic semiconductor thin films can be achieved by the recently demonstrated process of organic vapor phase deposition (OVPD). In contrast to the conventional process of vacuum thermal evaporation, the background gas pressure during OVPD is typically 0.1-10 Torr, resulting in a molecular mean free path (mfp) of from 100 to 1 μm, respectively. Monte Carlo simulations of film growth through apertures at these gas densities indicate that when the mfp is on the order of the mask-to-substrate separation, deposit edges can become diffuse. The simulations and deposition experiments discussed here indicate that the deposited feature shape is controlled by the mfp, the aperture geometry, and the mask-to-substrate separation. Carefully selected process conditions and mask geometries can result in features as small as 1 μm. Furthermore, based on continuum and stochastic models of molecular transport in confined geometries, we propose the in situ direct patterning growth technique of organic vapor jet printing. The high pattern definition obtained by OVPD makes this process attractive for the growth of a wide range of structures employed in modern organic electronic devices.

  1. Fabrication of Metal Oxide Thin Films Using the Langmuir-Blodgett Deposition Technique.

    NASA Astrophysics Data System (ADS)

    Johnson, David John

    The Langmuir Blodgett (LB) deposition of metal arachidates was investigated as a technique for fabrication of metal oxides with emphasis placed on the lanthanide arachidates. Traditionally, these materials are difficult to deposit via the LB process, due to the rigidity of the floating monolayer. Studies on yttrium arachidate have shown that the quality of deposition of these materials is highly dependent on the concentration of the metal salt and the pH of the subphase. Yttrium arachidate was thus deposited at 10^{-5} M YCl_3 over a pH range of 4.0 to 6.9. Uniform multilayer films were produced with films at the higher pH's showing 100% yttrium arachidate. A pK_{rm a} value of 4.9 +/- 0.2 was obtained under these conditions. Fourier transform infrared spectroscopy, Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy data indicate that the metal is being incorporated into the arachidic acid predominantly as Y(OH) ^{2+}. A saturation areal density of (2.0 +/- 0.1) times 10^{14} Y/cm ^2 was measured for one layer of yttrium arachidate. Ellipsometric measurements were performed on films of yttrium arachidate to study order-disorder transitions. Upon heating the films were observed to undergo two transitions at 65^circC and 100 ^circC. At room temperature, the as -deposited films were found to be anisotropic with indices of refraction of N_{rm x} = 1.503 +/- 0.005 and N _{rm z} = 1.554 +/- 0.005 and a monolayer spacing of 2.73 +/- 0.03 nm. Above 100^ circC the films were isotropic with N = 1.440 +/- 0.005 and a thickness of 3.13 +/- 0.03 nm per original layer. The films showed no desorption below 100^circ C. In contrast to films of cadium arachidate, the yttrium arachidate films were observed to undergo supercooling by 35^circC. This may point to a lack of nucleation sites in the yttrium arachidate films explaining why they maintain areal integrity at high temperature while cadmium arachidate films do not. The decomposition of LB films was

  2. Deposition of iron sulfide thin films by AACVD from single source precursors

    NASA Astrophysics Data System (ADS)

    Akhtar, Masood; Abdelhady, Ahmed Lutfi; Azad Malik, M.; O'Brien, Paul

    2012-05-01

    The unsymmetrical [Fe(S2CNEtiPr)3] (1), [Fe(S2CNEtMe)3] (2) and symmetrical [Fe(S2CN(Hex)2)3] (3), [Fe(S2CN(Et)2)3] (4) tris(dialkyldithiocarbamato)iron(III) complexes were used as single source precursors for the deposition of iron sulfide thin films by the aerosol assisted chemical vapor Deposition (AACVD) method. The unsymmetrical complexes deposited the mixed phases (pyrite and marcasite) at all deposition temperatures except the complex (2) which deposited pyrite and pyrrhotite at 400 °C. The symmetrical complex (3) with longer alkyl groups produced a mixture of pyrite and pyrrhotite phases at 350 and 450 °C but pyrite and mackinawite at 400 °C whereas the complex (4) with shorter alkyl groups deposited a mixture of pyrite and marcasite at 350 °C but a pure pyrrhotite phase at 400 and 450 °C.

  3. Optical properties of metal oxynitride thin films grown with atmospheric plasma deposition

    NASA Astrophysics Data System (ADS)

    Hovish, Michael Q.; Dauskardt, Reinhold H.

    2016-10-01

    Thin films of tantalum oxynitride (TaO x N y ) and titanium oxynitride (TiO x N y ) are deposited using atmospheric plasma deposition and a suite of optical properties are reported. Tantalum and titanium ethoxide are introduced into the afterglow of a radio-frequency capacitively coupled plasma, facilitating the growth of oxynitride films on silicon and polycarbonate at temperatures below 180 °C. The plasma power and nitrogen flow within the plasma are varied between 60 and 120 W and between 0.1 and 0.3 LPM respectively. We use spectroscopic ellipsometry to show that the optical properties of the metal oxynitride films grown in this study are comparable to those synthesized with sol-gel methods. Measurement of both the extinction coefficient and the transmission on polycarbonate substrates indicates good transparency in the visible wavelengths of light. Additionally, the refractive index increases when increasing the number of reactive nitrogen species within the discharge. We use x-ray photoelectron spectroscopy to correlate the higher indexes observed at large secondary gas flows to the presence of metal oxynitride bonding. Single layer anti-reflection coatings are deposited on silicon, with a five-fold and seven-fold reduction in reflection for TaO x N y and TiO x N y coatings, respectively. In total, we have found that the modulation of nitrogen concentration within the plasma discharge results in good control over optical constants. In addition, we observe similarities between films deposited with atmospheric plasma and those reported for sol-gel, indicating an alternative processing route where solution chemistries are currently applied.

  4. Electronic properties of high-temperature superconducting thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Abrecht, M.; Ariosa, Daniel; Cloetta, D.; Margaritondo, Giorgio; Pavuna, Davor

    2002-11-01

    We use a pulsed laser deposition (PLD) setup to grow ultra-thin films of high temperature superconductors (HTSC) and transfer them in-situ into a photoemission chamber. Photoemission measurements on such films allow us to study non-cleavable materials, but can also give insights into aspects never measured before, like the influence of strain on the low energy electronic structure. Systematic studies of many different materials grown as films showed that Bi2Sr2CaCu2O8+x, Bi2Sr2Cu1O6+x, Bi2Sr2Ca2Cu3O10+x and La2-xSrxCuO4 films exhibit a conductor-like Fermi edge, but materials containing chains (such as YBa2Cu3O7-x) are prone to very rapid surface degradation, possibly related to critical oxygen loss at the surface. Among HTSC materials, La2-xSrxCuO4 is extremely interesting because of its rather simple structure and the fact that its critical temperature Tc can be enhanced by epitaxial strain. Here we present our first high resolution angular resolved photoemission spectroscopy (ARPES) results on 8 unit-cell thin La2-xSrxCuO4 films on SrLaAlO4 [001] substrates. Due to the lattice mismatch, such films are compressed in the copper oxygen planes and expanded in the c-axis direction. Results show a surprisingly modified Fermi surface compared to the one of non-strained samples.

  5. Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

    SciTech Connect

    Ramana, C. V. Rubio, E. J.; Barraza, C. D.; Miranda Gallardo, A.; McPeak, Samantha; Kotru, Sushma; Grant, J. T.

    2014-01-28

    Gallium oxide (Ga{sub 2}O{sub 3}) thin films were made by sputter deposition employing a Ga{sub 2}O{sub 3} ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (T{sub s}), from 25 to 600 °C. The effect of T{sub s} on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p{sub 3/2} and Ga 2p{sub 1/2} peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga{sup 3+}) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE ∼ 531 eV, which is also characteristic of Ga-O bonds in the Ga{sub 2}O{sub 3} phase. The granular morphology of the nanocrystalline Ga{sub 2}O{sub 3} films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing T{sub s}. The SE analyses indicate that the index of refraction (n) of Ga{sub 2}O{sub 3} films increases with increasing T{sub s} due to improved structural quality and packing density of the films. The n(λ) of all the Ga{sub 2}O{sub 3} films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high (∼200 Ω-cm) for amorphous Ga{sub 2}O{sub 3} films grown at T{sub s} = RT-300 °C and decreased to ∼1 Ω-cm for nanocrystalline Ga{sub 2}O{sub 3} films grown at T{sub s} ≥ 500–600 °C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga{sub 2}O{sub 3} films is derived.

  6. Manufacturing and photoelectrical properties of P-doped a-Si:H thin films deposited by PECVD

    NASA Astrophysics Data System (ADS)

    Liao, Naiman; Li, Wei; Jiang, Yadong; Kuang, Yuejun; Qi, Kangcheng; Wu, Zhiming; Li, Shibin

    2007-12-01

    The effect of gas temperature (T g) on surface morphology, surface roughness, photoelectrical performances of a-Si:H thin films deposited by PECVD at 250°C substrate temperature has been investigated by atomic force microscopy, spectrometric ellipsometry and semiconductor characterization system, respectively. It is found that the surface morphology and density (ρ) as well as the photoelectrical properties such as refractive index (n), dark conductivity (σ), temperature coefficient of resistance (TCR) and activation energy (E a) remarkably depend on T g of SiH 4 fed in reaction chamber. The higher the T g, the larger the clusters of a-Si:H thin films deposited. Also, refractive index of a-Si:H thin films increase as T g rises and the relationship between T g enhancement of n and the densification of the films is observed. It is indicated that σ varies by two orders of magnitude but TCR decreases by 1.6 %/°C, and E a gradually decreases linearly from 289.0 to 138.1 meV with T g varying from room temperature to 160°C. The results of present study suggest that T g in PECVD chamber plays an important role in the deposition of a-Si:H thin films and directly affects the surface morphology and photoelectrical properties of films. Control of surface morphology, photoelectrical properties of a-Si:H thin films through changing T g can be usefully applied to the manufacturing of photoelectrical devices.

  7. Growth mechanism of Co:TiO2 thin film deposited by metal organic chemical vapor deposition technique

    NASA Astrophysics Data System (ADS)

    Saripudin, A.; Arifin, P.

    2016-04-01

    In this research, we investigated the growth mechanism of cobalt-doped titanium dioxide (Co:TiO2) films. Thi Co:TiO2 thin films were grown on the n-type silicon substrate. The films were grown by metal organic chemical vapor deposition method. The growth temperature was varied of 325°C - 450°C. The films were characterized by SEM. Using Arheniu’s equation, it is known that the activation energy value of film growth is positive in the range of temperature of 325°C - 400°C and negative in the range of temperature of 400°C - 450°C. These results show that the decomposition rate in the range of temperature of 325°C - 400°C is due to diffusion phase of precursor gas. On the other hand, the decomposition rate decreased in the range of temperature of 400°C - 450°C because the precursor gas decreased, and the surface chemical reaction was high.

  8. Plasma-enhanced atomic layer deposition zinc oixde flexible thin film electronics

    NASA Astrophysics Data System (ADS)

    Zhao, Dalong

    This thesis demonstrates high performance flexible thin film electronics fabricated by low temperature process. A novel process for forming high quality stable oxide films using weak oxidant plasma-enhanced atomic layer deposition (PEALD) has been used to achieve fastest flexible oxide integrated circuits reported to date. In addition, a unique approach based on plasma-enhanced chemical vapor deposition (PECVD) silicon nitride for organic light emitting diodes (OLEDs) encapsulation at low temperature (<70 °C) is also reported. Among several low temperature deposition approaches PEALD process provides highly crystalline and dense ZnO thin films which are uniform and conformal at 200 ºC. Crossover measurement results also demonstrate the advantage of PEALD process in thin film deposition on flexible substrates. PEALD ZnO flexible TFTs have high field-effect mobility (˜ 20 cm2/V˙s) and excellent bias stress stability with ALD Al2O3 passivation. 15-stage ring oscillators with propagation delay of <20 nsec/stage have been successfully fabricated on flexible substrates. To the best of our knowledge, these are the fastest oxide-semiconductor circuits on flexible substrates reported to date, and they are about 20 times faster than the best previous report. This thesis also presents the investigation of ZnO device physics by modeling. Non-ideal ZnO device characteristics, including passivation, contacts, and output conductance, have been well modeled and verified with experimental results. Two different approaches were also proposed to extract device parameters for compact models and form the foundation for later circuit design and simulations. A TCAD ZnO model is established and can well describe the operation physics from single transistor to simple circuits. This model is verified by reasonable agreement with experimental data. Building on the results of ZnO TFTs and circuits, several ZnO based applications have been demonstrated. Microsensors with ZnO pyroFETs have

  9. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation

    NASA Astrophysics Data System (ADS)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  10. Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

    PubMed

    Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

    2014-04-14

    ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency. PMID:24643984

  11. Hydroxyapatite thin films synthesized by Pulsed Laser Deposition onto titanium mesh implants for cranioplasty applications

    NASA Astrophysics Data System (ADS)

    Duta, L.; Stan, G. E.; Popescu, A. C.; Socol, G.; Miroiu, F. M.; Mihailescu, I. N.; Ianculescu, A.; Poeata, I.; Chiriac, A.

    2013-06-01

    We report on the synthesis of advanced nanostructured hydroxyapatite thin films onto 3D titanium (Ti) mesh substrates by Pulsed Laser Deposition method. Morphological and structural investigations as well as pull-out tests proved the stoichiometric transfer of crystalline hydroxyapatite (HA) films along with their good adherence. In vivo tests were performed on 12 patients (six with simple Ti mesh, six with Ti mesh biofunctionalized with HA). The tomodensitometry analysis of the cranial control scans evidenced the process of osseogenesis. For four patients with implanted HA/Ti mesh structures, the modification of the value obtained on Hounsfield scale was observed at the level of implant, proving the progress of osseointegration. We conclude that the structures exhibit excellent bonding strength and functionality, and are suitable for neurosurgical applications.

  12. Graphene oxide thin films: influence of chemical structure and deposition methodology.

    PubMed

    Hidalgo, R S; López-Díaz, D; Velázquez, M Mercedes

    2015-03-10

    We synthesized graphene oxide sheets of different functionalization by oxidation of two different starting materials, graphite and GANF nanofibers, followed by purification based on alkaline washing. The chemical structure of graphene oxide materials was determined by X-ray photoelectron spectroscopy (XPS), and the nanoplatelets were characterized by ζ potential and dynamic light scattering (DLS) measurements. The XPS results indicated that the chemical structure depends on the starting material. Two different deposition methodologies, Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS), were employed to build the graphene oxide thin films. The film morphology was analyzed by scanning electron microscopy (SEM). The SEM images allow us to conclude that the LB methodology provides the highest coverage. This coverage is almost independent of the chemical composition of sheets. Conversely, the coverage obtained by the LS methodology increases with the percentage of C-O groups attached to sheets. Surface-pressure isotherms of these materials were interpreted according to the Volmer model.

  13. Growth characteristics of Ti-based fumaric acid hybrid thin films by molecular layer deposition.

    PubMed

    Cao, Yan-Qiang; Zhu, Lin; Li, Xin; Cao, Zheng-Yi; Wu, Di; Li, Ai-Dong

    2015-09-01

    Ti-based fumaric acid hybrid thin films were successfully prepared using inorganic TiCl4 and organic fumaric acid as precursors by molecular layer deposition (MLD). The effect of deposition temperature from 180 °C to 350 °C on the growth rate, composition, chemical state, and topology of hybrid films has been investigated systematically by means of a series of analytical tools such as spectroscopic ellipsometry, atomic force microscopy (AFM), high resolution X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The MLD process of the Ti-fumaric acid shows self-limiting surface reaction with a reasonable growth rate of ∼0.93 Å per cycle and small surface roughness of ∼0.59 nm in root-mean-square value at 200 °C. A temperature-dependent growth characteristic has been observed in the hybrid films. On increasing the temperature from 180 °C to 300 °C, the growth rate decreases from 1.10 to 0.49 Å per cycle and the XPS composition of the film's C : O : Ti ratio changes from 8.35 : 7.49 : 1.00 to 4.66 : 4.80 : 1.00. FTIR spectra indicate that the hybrid films show bridging bonding mode at a low deposition temperature of 200 °C and bridging/bidentate mixed bonding mode at elevated deposition temperatures of 250 and 300 °C. The higher C and O amounts deviating from the ideal composition may be ascribed to increased organic incorporation into the hybrid films at lower deposition temperature and temperature-dependent density of reactive sites (-OH). The composition of hybrid films grown at 350 °C shows a dramatic decrease in C and O elemental composition (C : O : Ti = 1.97 : 2.76 : 1.00) due to the thermal decomposition of the fumaric acid precursor. The produced by-product H2O changes the structure of the hybrid films, resulting in the formation of more Ti-O bonds at high temperatures. The stability of the hybrid films against chemical and thermal treatment, and long-term storage by

  14. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    NASA Astrophysics Data System (ADS)

    Fortier, Jean-Philippe

    "Smart" windows are a perfect innovative example of technology that reduces our energy dependence and our impact on the environment while saving on the economical point of view. With the use of vanadium dioxide (VO2), a thermochromic compound, and this, as a thin coating, it would in fact be possible to control the sun's transmission of infrared light (heat) as a function of the surrounding environment temperature. In other words, its optical behavior would allow a more effective management of heat exchanges between a living venue and the outdoor environment. However, this type of window is still in a developmental stage. First, the oxide's deposition is not simple in nature. Based on a conventional deposition technique called magnetron sputtering mainly used in the fenestration industry, several factors such as the oxygen concentration and the substrate temperature during deposition can affect the coating's thermochromic behavior, and this, by changing its composition and crystallinity. Other control parameters such as the deposition rate, the pressure in the sputtering chamber and the choice of substrate may also modify the film microstructure, thereby varying its optical and electrical properties. In addition, several issues still persist as to its commercial application. For starters, the material's structural transition, related to the change of its optical properties, only occurs around 68°C. In addition, its low transparency and natural greenish colour are not visually appealing. Then, to this day, the deposition temperature required to crystallize and form the thermochromic oxide remains an obstacle for a possible large-scale application. Ultimately, although the material's change in temperature has been shown to be advantageous in situations of varying climate, the existing corrective solutions to these issues generate a deterioration of the thermochromic behavior. With no practical expertise on the material, this project was undertaken with certain

  15. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    NASA Astrophysics Data System (ADS)

    Ahumada-Lazo, R.; Torres-Martínez, L. M.; Ruíz-Gómez, M. A.; Vega-Becerra, O. E.; Figueroa-Torres, M. Z.

    2014-12-01

    The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV-visible spectroscopy (UV-Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  16. Reactive sputter deposition of pyrite structure transition metal disulfide thin films: Microstructure, transport, and magnetism

    SciTech Connect

    Baruth, A.; Manno, M.; Narasimhan, D.; Shankar, A.; Zhang, X.; Johnson, M.; Aydil, E. S.; Leighton, C.

    2012-09-01

    Transition metal disulfides crystallizing in the pyrite structure (e.g., TMS{sub 2}, with TM = Fe, Co, Ni, and Cu) are a class of materials that display a remarkably diverse array of functional properties. These properties include highly spin-polarized ferromagnetism (in Co{sub 1-x}Fe{sub x}S{sub 2}), superconductivity (in CuS{sub 2}), an antiferromagnetic Mott insulating ground state (in NiS{sub 2}), and semiconduction with close to optimal parameters for solar absorber applications (in FeS{sub 2}). Exploitation of these properties in heterostructured devices requires the development of reliable and reproducible methods for the deposition of high quality pyrite structure thin films. In this manuscript, we report on the suitability of reactive sputter deposition from metallic targets in an Ar/H{sub 2}S environment as a method to achieve exactly this. Optimization of deposition temperature, Ar/H{sub 2}S pressure ratio, and total working gas pressure, assisted by plasma optical emission spectroscopy, reveals significant windows over which deposition of single-phase, polycrystalline, low roughness pyrite films can be achieved. This is illustrated for the test cases of the ferromagnetic metal CoS{sub 2} and the diamagnetic semiconductor FeS{sub 2}, for which detailed magnetic and transport characterization are provided. The results indicate significant improvements over alternative deposition techniques such as ex situ sulfidation of metal films, opening up exciting possibilities for all-sulfide heterostructured devices. In particular, in the FeS{sub 2} case it is suggested that fine-tuning of the sputtering conditions provides a potential means to manipulate doping levels and conduction mechanisms, critical issues in solar cell applications. Parenthetically, we note that conditions for synthesis of phase-pure monosulfides and thiospinels are also identified.

  17. Solution precursor plasma deposition of nanostructured CdS thin films

    SciTech Connect

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

  18. Pulsed laser deposition of nanostructured Co-B-O thin films as efficient catalyst for hydrogen production

    NASA Astrophysics Data System (ADS)

    Jadhav, H.; Singh, A. K.; Patel, N.; Fernandes, R.; Gupta, S.; Kothari, D. C.; Miotello, A.; Sinha, S.

    2016-11-01

    Nanoparticles assembled Co-B-O thin film catalysts were synthesized by pulsed laser deposition (PLD) technique for hydrolysis of Sodium Borohydride (SBH). Surface morphology of the deposited films was investigated using SEM and TEM, while compositional analysis was studied using XPS. Structural properties of Co-B-O films were examined using XRD and HRTEM. Laser process is able to produce well separated and immobilized Co-B-O NPs on the film surface which act as active centers leading to superior catalytic activity producing hydrogen at a significantly higher rate as compared to bulk powder. Co-B-O thin film catalyst produces hydrogen at a maximum rate of ∼4400 ml min-1 g-1 of catalyst, which is four times higher than powder catalyst. PLD parameters such as laser fluence and substrate-target distance were varied during deposition in order to understand the role of size and density of the immobilized Co-B-O NPs in the catalytic process. Films deposited at 3-5 cm substrate-target distance showed better performance than that deposited at 6 cm, mainly on account of the higher density of active Co-B-O NPs on the films surface. Features such as high particle density, polycrystalline nature of Co NPs and good stability against agglomeration mainly contribute towards the superior catalytic activity of Co-B-O films deposited by PLD.

  19. Maskless deposition technique for the physical vapor deposition of thin film and multilayer coatings with subnanometer precision and accuracy

    DOEpatents

    Vernon, Stephen P.; Ceglio, Natale M.

    2000-01-01

    The invention is a method for the production of axially symmetric, graded and ungraded thickness thin film and multilayer coatings that avoids the use of apertures or masks to tailor the deposition profile. A motional averaging scheme permits the deposition of uniform thickness coatings independent of the substrate radius. Coating uniformity results from an exact cancellation of substrate radius dependent terms, which occurs when the substrate moves at constant velocity. If the substrate is allowed to accelerate over the source, arbitrary coating profiles can be generated through appropriate selection and control of the substrate center of mass equation of motion. The radial symmetry of the coating profile is an artifact produced by orbiting the substrate about its center of mass; other distributions are obtained by selecting another rotation axis. Consequently there is a direct mapping between the coating thickness and substrate equation of motion which can be used to tailor the coating profile without the use of masks and apertures.

  20. Raman spectroscopy of organic dyes adsorbed on pulsed laser deposited silver thin films

    NASA Astrophysics Data System (ADS)

    Fazio, E.; Neri, F.; Valenti, A.; Ossi, P. M.; Trusso, S.; Ponterio, R. C.

    2013-08-01

    The results of a surface-enhanced Raman scattering (SERS) study performed on representative organic and inorganic dyes adsorbed on silver nanostructured thin films are presented and discussed. Silver thin films were deposited on glass slides by focusing the beam from a KrF excimer laser (wavelength 248 nm, pulse duration 25 ns) on a silver target and performing the deposition in a controlled Ar atmosphere. Clear Raman spectra were acquired for dyes such as carmine lake, garanza lake and brazilwood overcoming their fluorescence and weak Raman scattering drawbacks. UV-visible absorption spectroscopy measurements were not able to discriminate among the different chromophores usually referred as carmine lake (carminic, kermesic and laccaic acid), as brazilwood (brazilin and brazilein) and as garanza lake (alizarin and purpurin). SERS measurements showed that the analyzed samples are composed of a mixture of different chromophores: brazilin and brazilein in brazilwood, kermesic and carminic acid in carmine lake, alizarin and purpurin in garanza lake. Detection at concentration level as low as 10-7 M in aqueous solutions was achieved. Higher Raman intensities were observed using the excitation line of 632.8 nm wavelength with respect to the 785 nm, probably due to a pre-resonant effect with the molecular electronic transitions of the dyes.